Temperature-dependent surface modification of Ta due to high-flux, low-energy He+ ion irradiation

International Nuclear Information System (INIS)

Novakowski, T.J.; Tripathi, J.K.; Hassanein, A.

2015-01-01

This work examines the response of Tantalum (Ta) as a potential candidate for plasma-facing components (PFCs) in future nuclear fusion reactors. Tantalum samples were exposed to high-flux, low-energy He + ion irradiation at different temperatures in the range of 823–1223 K. The samples were irradiated at normal incidence with 100 eV He + ions at constant flux of 1.2 × 10 21 ions m −2  s −1 to a total fluence of 4.3 × 10 24 ions m −2 . An additional Ta sample was also irradiated at 1023 K using a higher ion fluence of 1.7 × 10 25 ions m −2 (at the same flux of 1.2 × 10 21 ions m −2  s −1 ), to confirm the possibility of fuzz formation at higher fluence. This higher fluence was chosen to roughly correspond to the lower fluence threshold of fuzz formation in Tungsten (W). Surface morphology was characterized with a combination of field-emission scanning electron microscopy (FE-SEM) and atomic force microscopy (AFM). These results demonstrate that the main mode of surface damage is pinholes with an average size of ∼70 nm 2 for all temperatures. However, significantly larger pinholes are observed at elevated temperatures (1123 and 1223 K) resulting from the agglomeration of smaller pinholes. Ex situ X-ray photoelectron spectroscopy (XPS) provides information about the oxidation characteristics of irradiated surfaces, showing minimal exfoliation of the irradiated Ta surface. Additionally, optical reflectivity measurements are performed to further characterize radiation damage on Ta samples, showing gradual reductions in the optical reflectivity as a function of temperature.

The effect of carbon impurities on molybdenum surface morphology evolution under high-flux low-energy helium ion irradiation

International Nuclear Information System (INIS)

Tripathi, J.K.; Novakowski, T.J.; Gonderman, S.; Bharadwaj, N.; Hassanein, A.

2016-01-01

We report on the role of carbon (C) impurities, in molybdenum (Mo) fuzz evolutions on Mo surface during 100 eV He + ion irradiations. In this study we considered 0.01, 0.05, and 0.5% C + ion impurities in He + ion irradiations. For introducing such tiny C + ion impurities, gas mixtures of He and CH 4 have been chosen in following ratios; 99.95: 0.05, 99.75: 0.25, and 97.5: 2.5. Apart from these three cases, two additional cases, 100% He + ion (for Mo fuzz growth due to only He + ions) and 100% H + ion (for confirming the significance of tiny 0.04–2.0% H + ions in terms of Mo fuzz evolutions on Mo surface, if any), have also been considered. Ion energy (100 eV), ion fluence (2.6 × 10 24  ions m −2 ), and target temperature (923 K) were kept constant for each experiment and their selections were based on our previous studies [1,2]. Our study shows homogeneously populated and highly dense Mo fuzz evolutions on entire Mo surface for 100% He + ion irradiation case. Enhancement of C + ion impurities in He + ions causes a sequential reduction in Mo fuzz evolutions, leading to almost complete prevention of Mo fuzz evolutions for 0.5% C + ion impurity concentrations. Additionally, no fuzz formation for 100% H + ion irradiation at all, were seen (apart from some tiny nano-structuring, in very limited regions). This indicates that there is no significant role of H + ions in Mo fuzz evolutions (at least for such tiny amount, 0.04–2.0% H + ions). The study is significant to understand the behavior of potential high-Z plasma facing components (PFCs), in the, presence of tiny amount of C impurities, for nuclear fusion relevant applications. - Highlights: • Mo Fuzz evolutions due to low-energy high-flux 100% He + ion irradiation. • Sequential reduction in Mo fuzz evolutions with increasing C + ion impurities in He + ions. • Almost complete prevention of Mo fuzz evolutions for 0.5% C + ion impurity in He + ions. • No Mo fuzz formation for 100% H + ion

Temperature-dependent surface porosity of Nb{sub 2}O{sub 5} under high-flux, low-energy He{sup +} ion irradiation

Energy Technology Data Exchange (ETDEWEB)

Novakowski, T.J., E-mail: tnovakow@purdue.edu; Tripathi, J.K.; Hosinski, G.M.; Joseph, G.; Hassanein, A.

2016-01-30

Graphical abstract: - Highlights: • Nb{sub 2}O{sub 5} surfaces are nanostructured with a novel He{sup +} ion irradiation process. • High-flux, low energy He{sup +} ion irradiation generates highly porous surfaces. • Top-down approach guarantees good contact between different crystallites. • Sample annealing demonstrates temperature effect on surface morphology. • Surface pore diameter increases with increasing temperature. - Abstract: The present study reports on high-flux, low-energy He{sup +} ion irradiation as a novel method of enhancing the surface porosity and surface area of naturally oxidized niobium (Nb). Our study shows that ion-irradiation-induced Nb surface micro- and nano-structures are highly tunable by varying the target temperature during ion bombardment. Mirror-polished Nb samples were irradiated with 100 eV He{sup +} ions at a flux of 1.2 × 10{sup 21} ions m{sup −2} s{sup −1} to a total fluence of 4.3 × 10{sup 24} ions m{sup −2} with simultaneous sample annealing in the temperature range of 773–1223 K to demonstrate the influence of sample temperature on the resulting Nb surface morphology. This surface morphology was primarily characterized using field-emission scanning electron microscopy (FE-SEM) and atomic force microscopy (AFM). Below 923 K, Nb surfaces form nano-scale tendrils and exhibit significant increases in surface porosity. Above 923 K, homogeneously populated nano-pores with an average diameter of ∼60 nm are observed in addition to a smaller population of sub-micron sized pores (up to ∼230 nm in diameter). Our analysis shows a significant reduction in surface pore number density and surface porosity with increasing sample temperature. High-resolution ex situ X-ray photoelectron spectroscopy (XPS) shows Nb{sub 2}O{sub 5} phase in all of the ion-irradiated samples. To further demonstrate the length scales in which radiation-induced surface roughening occurs, optical reflectivity was performed over a spectrum of

Formation of nanostructures on HOPG surface in presence of surfactant atom during low energy ion irradiation

Energy Technology Data Exchange (ETDEWEB)

Ranjan, M., E-mail: ranjanm@ipr.res.in; Joshi, P.; Mukherjee, S.

2016-07-15

Low energy ions beam often develop periodic patterns on surfaces under normal or off-normal incidence. Formation of such periodic patterns depends on the substrate material, the ion beam parameters, and the processing conditions. Processing conditions introduce unwanted contaminant atoms, which also play strong role in pattern formation by changing the effective sputtering yield of the material. In this work we have analysed the effect of Cu, Fe and Al impurities introduced during low energy Ar{sup +} ion irradiation on HOPG substrate. It is observed that by changing the species of foreign atoms the surface topography changes drastically. The observed surface topography is co-related with the modified sputtering yield of HOPG. Presence of Cu and Fe amplify the effective sputtering yield of HOPG, so that the required threshold for the pattern formation is achieved with the given fluence, whereas Al does not lead to any significant change in the effective yield and hence no pattern formation occurs.

The effect of carbon impurities on molybdenum surface morphology evolution under high-flux low-energy helium ion irradiation

Energy Technology Data Exchange (ETDEWEB)

Tripathi, J.K., E-mail: jtripat@purdue.edu; Novakowski, T.J.; Gonderman, S.; Bharadwaj, N.; Hassanein, A.

2016-09-15

We report on the role of carbon (C) impurities, in molybdenum (Mo) fuzz evolutions on Mo surface during 100 eV He{sup +} ion irradiations. In this study we considered 0.01, 0.05, and 0.5% C{sup +} ion impurities in He{sup +} ion irradiations. For introducing such tiny C{sup +} ion impurities, gas mixtures of He and CH{sub 4} have been chosen in following ratios; 99.95: 0.05, 99.75: 0.25, and 97.5: 2.5. Apart from these three cases, two additional cases, 100% He{sup +} ion (for Mo fuzz growth due to only He{sup +} ions) and 100% H{sup +} ion (for confirming the significance of tiny 0.04–2.0% H{sup +} ions in terms of Mo fuzz evolutions on Mo surface, if any), have also been considered. Ion energy (100 eV), ion fluence (2.6 × 10{sup 24} ions m{sup −2}), and target temperature (923 K) were kept constant for each experiment and their selections were based on our previous studies [1,2]. Our study shows homogeneously populated and highly dense Mo fuzz evolutions on entire Mo surface for 100% He{sup +} ion irradiation case. Enhancement of C{sup +} ion impurities in He{sup +} ions causes a sequential reduction in Mo fuzz evolutions, leading to almost complete prevention of Mo fuzz evolutions for 0.5% C{sup +} ion impurity concentrations. Additionally, no fuzz formation for 100% H{sup +} ion irradiation at all, were seen (apart from some tiny nano-structuring, in very limited regions). This indicates that there is no significant role of H{sup +} ions in Mo fuzz evolutions (at least for such tiny amount, 0.04–2.0% H{sup +} ions). The study is significant to understand the behavior of potential high-Z plasma facing components (PFCs), in the, presence of tiny amount of C impurities, for nuclear fusion relevant applications. - Highlights: • Mo Fuzz evolutions due to low-energy high-flux 100% He{sup +} ion irradiation. • Sequential reduction in Mo fuzz evolutions with increasing C{sup +} ion impurities in He{sup +} ions. • Almost complete prevention of Mo

Low energy He+ irradiation effect on graphite surface

International Nuclear Information System (INIS)

Asari, E.; Nakamura, K.G.; Kitajima, M.; Kawabe, T.

1992-01-01

Study on the lattice disordering and the secondary electron emission under low energy (1-5keV) He + irradiation is reported. Real-time Raman measurements show that difference in the observed Raman spectra for different ion energies is due to the difference of the damage depth. The relation between the observed Raman spectrum and the depth profile of lattice damage is discussed. Energy dependence of the secondary electron emission coefficient are also described. (author)

An ion beam deceleration lens for ultra-low-energy ion bombardment of naked DNA

Energy Technology Data Exchange (ETDEWEB)

Thopan, P.; Prakrajang, K. [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Thongkumkoon, P. [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Thailand Center of Excellence in Physics, Commission on Higher Education, 328 Si Ayutthaya Road, Bangkok 10400 (Thailand); Suwannakachorn, D. [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Yu, L.D., E-mail: yuldyuld@gmail.com [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Thailand Center of Excellence in Physics, Commission on Higher Education, 328 Si Ayutthaya Road, Bangkok 10400 (Thailand)

2013-07-15

Highlights: ► An ion beam deceleration lens was designed and constructed. ► The deceleration lens was installed and tested. ► The decelerated ion beam energy was measured using an electrical field. ► Decelerated ultra-low-energy ion beam bombarded naked DNA. ► Ion beam with energy of a few tens of eV could break DNA strands. -- Abstract: Study of low-energy ion bombardment effect on biological living materials is of significance. High-energy ion beam irradiation of biological materials such as organs and cells has no doubt biological effects. However, ion energy deposition in the ion-bombarded materials dominantly occurs in the low-energy range. To investigate effects from very-low-energy ion bombardment on biological materials, an ion beam deceleration lens is necessary for uniform ion energy lower than keV. A deceleration lens was designed and constructed based on study of the beam optics using the SIMION program. The lens consisted of six electrodes, able to focus and decelerate primary ion beam, with the last one being a long tube to obtain a parallel uniform exiting beam. The deceleration lens was installed to our 30-kV bioengineering-specialized ion beam line. The final decelerated-ion energy was measured using a simple electrostatic field to bend the beam to range from 10 eV to 1 keV controlled by the lens parameters and the primary beam condition. In a preliminary test, nitrogen ion beam at 60 eV decelerated from a primary 20-keV beam bombarded naked plasmid DNA. The original DNA supercoiled form was found to change to relaxed and linear forms, indicating single or double strand breaks. The study demonstrated that the ion bombardment with energy as low as several-tens eV was possible to break DNA strands and thus potential to cause genetic modification of biological cells.

An ion beam deceleration lens for ultra-low-energy ion bombardment of naked DNA

International Nuclear Information System (INIS)

Thopan, P.; Prakrajang, K.; Thongkumkoon, P.; Suwannakachorn, D.; Yu, L.D.

2013-01-01

Highlights: ► An ion beam deceleration lens was designed and constructed. ► The deceleration lens was installed and tested. ► The decelerated ion beam energy was measured using an electrical field. ► Decelerated ultra-low-energy ion beam bombarded naked DNA. ► Ion beam with energy of a few tens of eV could break DNA strands. -- Abstract: Study of low-energy ion bombardment effect on biological living materials is of significance. High-energy ion beam irradiation of biological materials such as organs and cells has no doubt biological effects. However, ion energy deposition in the ion-bombarded materials dominantly occurs in the low-energy range. To investigate effects from very-low-energy ion bombardment on biological materials, an ion beam deceleration lens is necessary for uniform ion energy lower than keV. A deceleration lens was designed and constructed based on study of the beam optics using the SIMION program. The lens consisted of six electrodes, able to focus and decelerate primary ion beam, with the last one being a long tube to obtain a parallel uniform exiting beam. The deceleration lens was installed to our 30-kV bioengineering-specialized ion beam line. The final decelerated-ion energy was measured using a simple electrostatic field to bend the beam to range from 10 eV to 1 keV controlled by the lens parameters and the primary beam condition. In a preliminary test, nitrogen ion beam at 60 eV decelerated from a primary 20-keV beam bombarded naked plasmid DNA. The original DNA supercoiled form was found to change to relaxed and linear forms, indicating single or double strand breaks. The study demonstrated that the ion bombardment with energy as low as several-tens eV was possible to break DNA strands and thus potential to cause genetic modification of biological cells

Tailoring molybdenum nanostructure evolution by low-energy He+ ion irradiation

Science.gov (United States)

Tripathi, J. K.; Novakowski, T. J.; Hassanein, A.

2015-10-01

Mirror-finished polished molybdenum (Mo) samples were irradiated with 100 eV He+ ions as a function of ion fluence (using a constant flux of 7.2 × 1020 ions m-2 s-1) at normal incidence and at 923 K. Mo surface deterioration and nanoscopic fiber-form filament ("Mo fuzz") growth evolution were monitored by using field emission (FE) scanning electron (SEM) and atomic force (AFM) microscopy studies. Those studies confirm a reasonably clean and flat surface, up to several micrometer scales along with a few mechanical-polishing-induced scratches. However, He+ ion irradiation deteriorates the surface significantly even at 2.1 × 1023 ions m-2 fluence (about 5 min. irradiation time) and leads to evolution of homogeneously populated ∼75-nm-long Mo nanograins having ∼8 nm intergrain width. The primary stages of Mo fuzz growth, i.e., elongated half-cylindrical ∼70 nm nanoplatelets, and encapsulated bubbles of 20-45 nm in diameter and preferably within the grain boundaries of sub-micron-sized grains, were observed after 1.3 × 1024 ions m-2 fluence irradiation. Additionally, a sequential enhancement in the sharpness, density, and protrusions of Mo fuzz at the surface with ion fluence was also observed. Fluence- and flux-dependent studies have also been performed at 1223 K target temperature (beyond the temperature window for Mo fuzz formation). At a constant fluence of 2.6 × 1024 ions m-2, 7.2 × 1020 ions m-2 s-1 flux generates a homogeneous layered and stacked nanodiscs of ∼70 nm diameter. On the other hand, 1.2 × 1021 ions m-2 s-1 flux generates a combination of randomly patched netlike nanomatrix networked structure, mostly with ∼105 nm nanostructure wall width, various-shaped pores, and self-organized nano arrays. While the observed netlike nanomatrix network structures for 8.6 × 1024 ions m-2 fluence (at a constant flux of 1.2 × 1021 ions m-2 s-1) is quite similar to those for 2.6 × 1024 ions m-2 fluence, the nanostructure wall width extends up to ∼45

Production of nanodiamonds by high-energy ion irradiation of graphite at room temperature

International Nuclear Information System (INIS)

Daulton, T.L.; Kirk, M.A.; Lewis, R.S.; Rehn, L.E.

2001-01-01

It has previously been shown that graphite can be transformed into diamond by MeV electron and ion irradiation at temperatures above approximately 600 deg. C. However, there exists geological evidence suggesting that carbonaceous materials can be transformed to diamond by irradiation at substantially lower temperatures. For example, submicron-size diamond aggregates have been found in uranium-rich, Precambrian carbonaceous deposits that never experienced high temperature or pressure. To test if diamonds can be formed at lower irradiation temperatures, sheets of fine-grain polycrystalline graphite were bombarded at 20 deg. C with 350±50 MeV Kr ions to fluences of 6x10 12 cm -2 using the Argonne tandem linear accelerator system (ATLAS). Ion-irradiated (and unirradiated control) graphite specimens were then subjected to acid dissolution treatments to remove untransformed graphite and isolate diamonds that were produced; these acid residues were subsequently characterized by high-resolution and analytical electron microscopy. The acid residue of the ion-irradiated graphite was found to contain nanodiamonds, demonstrating that ion irradiation of graphite at ambient temperature can produce diamond. The diamond yield under our irradiation conditions is low, ∼0.01 diamonds/ion. An important observation that emerges from comparing the present result with previous observations of diamond formation during irradiation is that nanodiamonds form under a surprisingly wide range of irradiation conditions. This propensity may be related to the very small difference in the graphite and diamond free-energies coupled with surface-energy considerations that may alter the relative stability of diamond and graphite at nanometer sizes

Tailoring molybdenum nanostructure evolution by low-energy He+ ion irradiation

International Nuclear Information System (INIS)

Tripathi, J.K.; Novakowski, T.J.; Hassanein, A.

2015-01-01

Mirror-finished polished molybdenum (Mo) samples were irradiated with 100 eV He + ions as a function of ion fluence (using a constant flux of 7.2 × 10 20 ions m −2 s −1 ) at normal incidence and at 923 K. Mo surface deterioration and nanoscopic fiber-form filament (“Mo fuzz”) growth evolution were monitored by using field emission (FE) scanning electron (SEM) and atomic force (AFM) microscopy studies. Those studies confirm a reasonably clean and flat surface, up to several micrometer scales along with a few mechanical-polishing-induced scratches. However, He + ion irradiation deteriorates the surface significantly even at 2.1 × 10 23 ions m −2 fluence (about 5 min. irradiation time) and leads to evolution of homogeneously populated ∼75-nm-long Mo nanograins having ∼8 nm intergrain width. The primary stages of Mo fuzz growth, i.e., elongated half-cylindrical ∼70 nm nanoplatelets, and encapsulated bubbles of 20–45 nm in diameter and preferably within the grain boundaries of sub-micron-sized grains, were observed after 1.3 × 10 24 ions m −2 fluence irradiation. Additionally, a sequential enhancement in the sharpness, density, and protrusions of Mo fuzz at the surface with ion fluence was also observed. Fluence- and flux-dependent studies have also been performed at 1223 K target temperature (beyond the temperature window for Mo fuzz formation). At a constant fluence of 2.6 × 10 24 ions m −2 , 7.2 × 10 20 ions m −2 s −1 flux generates a homogeneous layered and stacked nanodiscs of ∼70 nm diameter. On the other hand, 1.2 × 10 21 ions m −2 s −1 flux generates a combination of randomly patched netlike nanomatrix networked structure, mostly with ∼105 nm nanostructure wall width, various-shaped pores, and self-organized nano arrays. While the observed netlike nanomatrix network structures for 8.6 × 10 24 ions m −2 fluence (at a constant flux of 1.2 × 10 21 ions m −2 s −1 ) is quite similar to those for 2.6 × 10 24 ions m −2

A highly sensitive CaF{sub 2}:Dy nanophosphor as an efficient low energy ion dosimetry

Energy Technology Data Exchange (ETDEWEB)

Bhadane, Mahesh S.; Hareesh, K.; Dahiwale, S.S.; Sature, K.R. [Microtron Accelerator Laboratory, Department of Physics, Savitribai Phule Pune University, Pune 411007 (India); Patil, B.J. [Department of Physics, Abasaheb Garware College, Pune 411004 (India); Asokan, K.; Kanjilal, D. [Inter University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi 110067 (India); Bhoraskar, V.N. [Microtron Accelerator Laboratory, Department of Physics, Savitribai Phule Pune University, Pune 411007 (India); Dhole, S.D., E-mail: sanjay@physics.unipune.ac.in [Microtron Accelerator Laboratory, Department of Physics, Savitribai Phule Pune University, Pune 411007 (India)

2016-11-01

Highlights: • CaF{sub 2}:Dy nanophosphor synthesized by chemical co-precipitation route. • Phosphors are irradiated by H, Ar and N low energy ions at different fluences. • LEBI irradiated phosphors are characterized by XRD, TEM, FTIR and PL spectroscopy. • First time report to LEIB irradiated for thermoluminescence dosimetric applications. - Abstract: Dysprosium doped calcium fluoride (CaF{sub 2}:Dy) powers synthesized by co-precipitation method were irradiated with low energy ion beams (LEIB) viz. 100 keV H, 200 keV Ar and 350 keV N beams at different fluences and demonstrated for low energy ion dosimetric application. X-ray Diffraction and Transmission electron microscopy revealed the formation of highly crystalline cubic structured particles with size ∼45–50 nm. FTIR spectra of the CaF{sub 2}:Dy samples show changes of some bonds such as N–O asymmetric, C–F bonding and C–H aromatic contain stretching mode after LEIB irradiation. The thermoluminescence (TL) glow curve peaks were observed at 207 °C for Ar ion, at 203 °C for H ion and at 216 °C and 270 °C for N ion. It has been found that CaF{sub 2}:Dy nanophosphor shows a linear response with minimum fading for all the ion species. Computerized Glow Curve Deconvolution was performed for TL curve of high fluence ion irradiated nanophosphor to estimate the trapping parameters and the respective figure of merit (FOM) found to be very appropriate for all the nanophosphor. These results indicated that the CaF{sub 2}:Dy can be used as a low energy ion detector or dose.

Interaction of atomic and low-energy deuterium with tungsten pre-irradiated with self-ions

International Nuclear Information System (INIS)

Ogorodnikova, O. V.; Markelj, S.; Toussaint, U. von

2016-01-01

Polycrystalline tungsten (W) specimens were pre-irradiated with self-ions to create identical samples with high density of defects up to ∼2.5 μm near the surface. Then, W specimens were exposed to either thermal atomic deuterium (D) beam with an incident energy of ∼0.2 eV or low energy D plasma with the incident energy varied between 5 and 200 eV at different sample temperatures. Each sample was exposed once at certain temperature and fluence. The D migration and accumulation in W were studied post-mortem by nuclear reaction method. It was shown that the rate of the D to occupy radiation-induced defects increases with increasing the incident energy, ion flux, and temperature. Experimental investigation was accompanied by modelling using the rate-equation model. Moreover, the analytical model was developed and benchmarked against numerical model. The calculations of the deuterium diffusion with trapping at radiation-induced defects in tungsten by analytical model are consistent with numerical calculations using rate-equation model. The data of reflection and penetration of atomic and low-energy D were taking from calculations using molecular dynamics (MD) with Juslin interatomic potentials and a binary collision code TRIM. MD calculations show an agreement with a binary collision code TRIM only in a very narrow range of deuterium energies between 1 and 20 eV. Incorporation of the data of reflection and penetration of deuterium in the macroscopic modelling has been done to verify the range of validity of calculations using MD and binary collision code TRIM by comparison of modelling results with experimental data. Modelling results are consistent with experiments using reflection and penetration data of D obtained from TRIM code for incident ion energy above 1 eV. Otherwise, the parameters obtained from MD should be incorporated in the rate-equation model to have a good agreement with the experiments

The effect of low energy helium ion irradiation on tungsten-tantalum (W-Ta) alloys under fusion relevant conditions

Science.gov (United States)

Gonderman, S.; Tripathi, J. K.; Novakowski, T. J.; Sizyuk, T.; Hassanein, A.

2017-08-01

Currently, tungsten remains the best candidate for plasma-facing components (PFCs) for future fusion devices because of its high melting point, low erosion, and strong mechanical properties. However, continued investigation has shown tungsten to undergo severe morphology changes under fusion-like conditions. These results motivate the study of innovative PFC materials which are resistant to surface morphology evolution. The goal of this work is to examine tungsten-tantalum (W-Ta) alloys, a potential PFC material, and their response to low energy helium ion irradiation. Specifically, W-Ta samples are exposed to 100 eV helium irradiations with a flux of 1.15 × 1021 ions m-2 s-1, at 873 K, 1023 K, and 1173 K for 1 h duration. Scanning electron microscopy (SEM) reveals significant changes in surface deterioration due to helium ion irradiation as a function of both temperature and tantalum concentration in W-Ta samples. X-Ray Diffraction (XRD) studies show a slight lattice parameter expansion in W-Ta alloy samples compared to pure W samples. The observed lattice parameter expansion in W-Ta alloy samples (proportional to increasing Ta wt.% concentrations) reflect significant differences observed in the evolution of surface morphology, i.e., fuzz development processes for both increasing Ta wt.% concentration and target temperature. These results suggest a correlation between the observed morphology differences and the induced crystal structure change caused by the presence of tantalum. Shifts in the XRD peaks before and after 100 eV helium irradiation with a flux of 1.15 × 1021 ions m-2 s-1, 1023 K, for 1 h showed a significant difference in the magnitude of the shift. This has suggested a possible link between the atomic spacing of the material and the accumulated damage. Ongoing research is needed on W-Ta alloys and other innovative materials for their application as irradiation resistant materials in future fusion or irradiation environments.

Polymer surfaces graphitization by low-energy He{sup +} ions irradiation

Energy Technology Data Exchange (ETDEWEB)

Geworski, A.; Lazareva, I.; Gieb, K.; Koval, Y.; Müller, P. [Department of Physics, Universität Erlangen-Nürnberg, Erwin-Rommel-Str. 1, 91058 Erlangen (Germany)

2014-08-14

The electrical and optical properties of surfaces of polyimide and AZ5214e graphitized by low-energy (1 keV) He{sup +} irradiation at different polymer temperatures were investigated. The conductivity of the graphitized layers can be controlled with the irradiation temperature within a broad range and can reach values up to ∼1000 S/cm. We show that the electrical transport in low-conducting samples is governed by thermally activated hopping, while the samples with a high conductivity show a typical semimetallic behavior. The transition from thermally activated to semimetallic conductance governed by the irradiation temperature could also be observed in optical measurements. The semimetallic samples show an unusually high for graphitic materials carrier concentration, which results in a high extinction coefficient in the visible light range. By analyzing the temperature dependence of the conductance of the semimetallic samples, we conclude that the scattering of charge carriers is dominated by Coulomb interactions and can be described by a weak localization model. The transition from a three to two dimensional transport mechanism at low temperatures consistently explains the change in the temperature dependence of the conductance by cooling, observed in experiments.

Scanning ion microscopy with low energy lithium ions

International Nuclear Information System (INIS)

Twedt, Kevin A.; Chen, Lei; McClelland, Jabez J.

2014-01-01

Using an ion source based on photoionization of laser-cooled lithium atoms, we have developed a scanning ion microscope with probe sizes of a few tens of nanometers and beam energies from 500 eV to 5 keV. These beam energies are much lower than the typical operating energies of the helium ion microscope or gallium focused ion beam systems. We demonstrate how low energy can be advantageous in ion microscopy when detecting backscattered ions, due to a decreased interaction volume and the potential for surface sensitive composition analysis. As an example application that demonstrates these advantages, we non-destructively image the removal of a thin residual resist layer during plasma etching in a nano-imprint lithography process. - Highlights: • We use an ion source based on photoionization of laser-cooled lithium atoms. • The ion source makes possible a low energy (500 eV to 5 keV) scanning ion microscope. • Low energy is preferred for ion microscopy with backscattered ions. • We use the microscope to image a thin resist used in nano-imprint lithography

Tailoring molybdenum nanostructure evolution by low-energy He{sup +} ion irradiation

Energy Technology Data Exchange (ETDEWEB)

Tripathi, J.K., E-mail: jtripat@purdue.edu; Novakowski, T.J.; Hassanein, A.

2015-10-30

Mirror-finished polished molybdenum (Mo) samples were irradiated with 100 eV He{sup +} ions as a function of ion fluence (using a constant flux of 7.2 × 10{sup 20} ions m{sup −2} s{sup −1}) at normal incidence and at 923 K. Mo surface deterioration and nanoscopic fiber-form filament (“Mo fuzz”) growth evolution were monitored by using field emission (FE) scanning electron (SEM) and atomic force (AFM) microscopy studies. Those studies confirm a reasonably clean and flat surface, up to several micrometer scales along with a few mechanical-polishing-induced scratches. However, He{sup +} ion irradiation deteriorates the surface significantly even at 2.1 × 10{sup 23} ions m{sup −2} fluence (about 5 min. irradiation time) and leads to evolution of homogeneously populated ∼75-nm-long Mo nanograins having ∼8 nm intergrain width. The primary stages of Mo fuzz growth, i.e., elongated half-cylindrical ∼70 nm nanoplatelets, and encapsulated bubbles of 20–45 nm in diameter and preferably within the grain boundaries of sub-micron-sized grains, were observed after 1.3 × 10{sup 24} ions m{sup −2} fluence irradiation. Additionally, a sequential enhancement in the sharpness, density, and protrusions of Mo fuzz at the surface with ion fluence was also observed. Fluence- and flux-dependent studies have also been performed at 1223 K target temperature (beyond the temperature window for Mo fuzz formation). At a constant fluence of 2.6 × 10{sup 24} ions m{sup −2}, 7.2 × 10{sup 20} ions m{sup −2} s{sup −1} flux generates a homogeneous layered and stacked nanodiscs of ∼70 nm diameter. On the other hand, 1.2 × 10{sup 21} ions m{sup −2} s{sup −1} flux generates a combination of randomly patched netlike nanomatrix networked structure, mostly with ∼105 nm nanostructure wall width, various-shaped pores, and self-organized nano arrays. While the observed netlike nanomatrix network structures for 8.6 × 10{sup 24} ions m{sup −2} fluence (at a constant

Effect of swift heavy ion-irradiation on Cr/Fe/Ni multilayers

International Nuclear Information System (INIS)

Gupta, Ratnesh; Gupta, Ajay; Avasthi, D.K.; Principi, G.; Tosello, C.

1999-01-01

A multilayer film having overall composition Fe 50 Cr 25 Ni 25 , was irradiated successively by 80 MeV Si ions and Ag ions of 150 and 200 MeV energy. The energy deposited in the multilayer in the form of electronic excitations results in significant modification at the interfaces. The interfacial roughness increases in the system after the irradiations as revealed by X-ray reflectivity measurement. Moessbauer measurements provide evidence of intermixing after the irradiation by 200 MeV Ag ions. Comparison of heavy ion irradiated multilayer has been done with annealed and low energy ion irradiated samples. Results suggest that the phases formed at the interfaces of iron as a result of electronic energy loss are similar to those in the cases of thermal diffusion and keV energy ion beam irradiation

Utilizing Neon Ion Microscope for GaSb nanopatterning studies: Nanostructure formation and comparison with low energy nanopatterning

International Nuclear Information System (INIS)

El-Atwani, Osman; Huynh, Chuong; Norris, Scott

2016-01-01

Graphical abstract: - Highlights: • Carl Zeiss-neon ion microscope was used to irradiated GaSb surfaces with 5 keV neon. • In-situ imaging using helium beam and ex-situ imaging using an electron beam were performed. • Differences in imaging output between the helium and the electron beam were observed. • Transition occurred in the nanostructure type and formation mechanism as the energy is changed from 2 to 5 keV. • Collision cascade simulations suggested a transition toward bulk-driven mechanisms. - Abstract: Low energy irradiation of GaSb surfaces has been shown to lead to nanopillar formation. Being performed ex-situ, controlling the parameters of the ion beam for controlled nanopattern formation is challenging. While mainly utilized for imaging and cutting purposes, the development of multibeam (helium/neon) ion microscopes has opened the path towards the use of these microscopes for in-situ ion irradiation and nanopatterning studies. In this study, in-situ irradiation (neon ions)/imaging (helium ions) of GaSb surfaces is performed using Carl Zeiss-neon ion microscope at low energies (5 and 10 keV). Imaging with helium ions, nanodots were shown to form at particular fluences after which are smoothed. Ex-situ imaging with SEM showed nanopore formation of size controlled by the ion energy and fluence. Compared to lower energy ex-situ neon ion irradiation at similar fluxes, where nanopillars are formed, the results demonstrated a transition in the nanostructure type and formation mechanism as the energy is changed from 2 to 5 keV. Simulations show an increase in the ballistic diffusion and a decrease in the strength of phase separation as a function of ion energy in agreement with the suppression of nanopillar formation at higher energies. Collision cascade simulations suggest a transition toward bulk-driven mechanisms.

Utilizing Neon Ion Microscope for GaSb nanopatterning studies: Nanostructure formation and comparison with low energy nanopatterning

Energy Technology Data Exchange (ETDEWEB)

El-Atwani, Osman, E-mail: oelatwan25@gmail.com [School of Nuclear Engineering, Purdue University, West Lafayette, Indiana 47907 (United States); Huynh, Chuong [Carl Zeiss Microscopy, LLC, One Corporation Way, Peabody, MA 01960 (United States); Norris, Scott [Department of Mathematics, Southern Methodist University, Dallas, TX 75275 (United States)

2016-05-01

Graphical abstract: - Highlights: • Carl Zeiss-neon ion microscope was used to irradiated GaSb surfaces with 5 keV neon. • In-situ imaging using helium beam and ex-situ imaging using an electron beam were performed. • Differences in imaging output between the helium and the electron beam were observed. • Transition occurred in the nanostructure type and formation mechanism as the energy is changed from 2 to 5 keV. • Collision cascade simulations suggested a transition toward bulk-driven mechanisms. - Abstract: Low energy irradiation of GaSb surfaces has been shown to lead to nanopillar formation. Being performed ex-situ, controlling the parameters of the ion beam for controlled nanopattern formation is challenging. While mainly utilized for imaging and cutting purposes, the development of multibeam (helium/neon) ion microscopes has opened the path towards the use of these microscopes for in-situ ion irradiation and nanopatterning studies. In this study, in-situ irradiation (neon ions)/imaging (helium ions) of GaSb surfaces is performed using Carl Zeiss-neon ion microscope at low energies (5 and 10 keV). Imaging with helium ions, nanodots were shown to form at particular fluences after which are smoothed. Ex-situ imaging with SEM showed nanopore formation of size controlled by the ion energy and fluence. Compared to lower energy ex-situ neon ion irradiation at similar fluxes, where nanopillars are formed, the results demonstrated a transition in the nanostructure type and formation mechanism as the energy is changed from 2 to 5 keV. Simulations show an increase in the ballistic diffusion and a decrease in the strength of phase separation as a function of ion energy in agreement with the suppression of nanopillar formation at higher energies. Collision cascade simulations suggest a transition toward bulk-driven mechanisms.

Deep-level transient spectroscopy of low-energy ion-irradiated silicon

DEFF Research Database (Denmark)

Kolkovsky, Vladimir; Privitera, V.; Nylandsted Larsen, Arne

2009-01-01

 During electron-gun deposition of metal layers on semiconductors, the semiconductor is bombarded with low-energy metal ions creating defects in the outermost surface layer. For many years, it has been a puzzle why deep-level transient spectroscopy spectra of the as-deposited, electron-gun evapor...

On the defect structure due to low energy ion bombardment of graphite

Science.gov (United States)

Marton, D.; Bu, H.; Boyd, K. J.; Todorov, S. S.; Al-Bayati, A. H.; Rabalais, J. W.

1995-03-01

Graphite surfaces cleaved perpendicular to the c axis have been irradiated with low doses of Ar + ions at 50 eV kinetic energy and perpendicular incidence. Scanning tunneling micrographs (STM) of these irradiated surfaces exhibited dome-like features as well as point defects. These dome-like features retain undisturbed graphite periodicity. This finding is attributed to the stopping of ions between the first and second graphite sheets. The possibility of doping semiconductors at extremely shallow depths is raised.

A study of low-energy ion induced radiolysis of thiol-containing amino acid cysteine in the solid and aqueous solution states

Energy Technology Data Exchange (ETDEWEB)

Ke Zhigang [Key Laboratory of Ion Beam Bio-engineering, Institute of Plasma Physics of Chinese Academy of Sciences, 350 Shushanhu Road, P.O. Box 1126, Hefei 230031 (China); Huang Qing, E-mail: huangq@ipp.ac.c [Key Laboratory of Ion Beam Bio-engineering, Institute of Plasma Physics of Chinese Academy of Sciences, 350 Shushanhu Road, P.O. Box 1126, Hefei 230031 (China); Dang Bingrong [Institute of Modern Physics, Chinese Academy of Sciences, 509 Nanchang Road, Lanzhou 730000 (China); Lu Yilin [Key Laboratory of Ion Beam Bio-engineering, Institute of Plasma Physics of Chinese Academy of Sciences, 350 Shushanhu Road, P.O. Box 1126, Hefei 230031 (China); Department of Physics, Anhui University, Hefei 230031 (China); Yuan Hang; Zhang Shuqing; Yu Zengliang [Key Laboratory of Ion Beam Bio-engineering, Institute of Plasma Physics of Chinese Academy of Sciences, 350 Shushanhu Road, P.O. Box 1126, Hefei 230031 (China)

2010-09-15

The radiolysis of cysteine under plasma discharge and irradiation of low-energy ion beam was investigated. The damage of cysteine in aqueous solution under discharge was assessed via the acid ninhydrin reagent and the yield of cystine produced from the reaction was analyzed by FTIR. In addition, the generation of hydrogen sulfide was also identified. The destruction of solid cysteine under low-energy ion beam irradiation was estimated via monitoring IR bands of different functional groups (-SH, -NH{sub 3}, -COO{sup -}) of cysteine, and the production of cystine from ion-irradiated solid cysteine after dissolution in water was also verified. These results may help us to understand the inactivation of sulphydryl enzymes under direct and indirect interaction with the low-energy ion irradiation.

Experimental modeling of high burn-up structure in SIMFUEL with ion irradiation

International Nuclear Information System (INIS)

Baranov, V.; Isaenkova, M.; Lunev, A.; Tenishev, A.; Khlunov, A.

2013-01-01

Experiments are conducted to simulate high burn-up structure in accelerator conditions. Three ion irradiation schemes are used: 1. Xe 27+ 160 MeV up to 5x10 15 cm -2 (thermal spikes). 2. Xe 16+ 320 keV up to 1x10 17 cm -2 (collision cascades). 3. He + 20 keV up to 5,5x10 17 cm -2 (implantation stage). Structural characterization performed by scanning electron microscopy, X-ray analysis and atomic force microscopy revealed prominent grain refinement in case of Xe 27+ irradiation. Artificial energy variation for incident ions showed varying size of subgrains. At maximum energy of incident ions, subgrain size amounts ∼ 320 nm. Moving to the edge of irradiated region changes the size to ∼ 170 nm. Typical size of coherent scattering regions matches subgrain size for high-energy irradiation. Low-energy irradiation results in less significant structural changes: flaky structure at random sites for samples irradiated with low-energy xenon ions and bubble nucleation for helium irradiation. Dislocation density increases significantly, and it is shown that a single fluence dependence exists for low- and high-energy irradiation. (authors)

Nano-patterning of perpendicular magnetic recording media by low-energy implantation of chemically reactive ions

International Nuclear Information System (INIS)

Martin-Gonzalez, M.S.; Briones, F.; Garcia-Martin, J.M.; Montserrat, J.; Vila, L.; Faini, G.; Testa, A.M.; Fiorani, D.; Rohrmann, H.

2010-01-01

Magnetic nano-patterning of perpendicular hard disk media with perpendicular anisotropy, but preserving disk surface planarity, is presented here. Reactive ion implantation is used to locally modify the chemical composition (hence the magnetization and magnetic anisotropy) of the Co/Pd multilayer in irradiated areas. The procedure involves low energy, chemically reactive ion irradiation through a resist mask. Among N, P and As ions, P are shown to be most adequate to obtain optimum bit density and topography flatness for industrial Co/Pd multilayer media. The effect of this ion contributes to isolate perpendicular bits by destroying both anisotropy and magnetic exchange in the irradiated areas. Low ion fluences are effective due to the stabilization of atomic displacement levels by the chemical effect of covalent impurities.

Investigation of structural materials of reactors using high-energy heavy-ion irradiations

International Nuclear Information System (INIS)

Wang Zhiguang

2007-01-01

Radiation damage in structural materials of fission/fusion reactors is mainly attributed to the evolution of intensive atom displacement damage induced by energetic particles (n, α and/or fission fragments) and high-rate helium doping by direct α particle bombardments and/or (n, α) reactions. It can cause severe degradation of reactor structural materials such as surface blistering, bulk void swelling, deformation, fatigue, embrittlement, stress erosion corrosion and so on that will significantly affect the operation safety of reactors. However, up to now, behavior of structural materials at the end of their service can hardly be fully tested in a real reactor. In the present work, damage process in reactor structural materials is briefly introduced, then the advantages of energetic ion implantation/irradiation especially high-energy heavy ion irradiation are discussed, and several typical examples on simulation of radiation effects in reactor candidate structural materials using high-energy heavy ion irradiations are pronounced. Experimental results and theoretical analysis suggested that irradiation with energetic particles especially high-energy heavy ions is very useful technique for simulating the evolution of microstructures and macro-properties of reactor structural materials. Furthermore, an on-going plan of material irradiation experiments using high energy H- and He-ions based on the Heavy Ion Research Facilities in Lanzhou (HIRFL) is also briefly interpreted. (authors)

Changes in the surface electronic states of semiconductor fine particles induced by high energy ion irradiation

Energy Technology Data Exchange (ETDEWEB)

Yamaki, Tetsuya; Asai, Keisuke; Ishigure, Kenkichi [Tokyo Univ. (Japan); Shibata, Hiromi

1997-03-01

The changes in the surface electronic states of Q-sized semiconductor particles in Langmuir-Blodgett (LB) films, induced by high energy ion irradiation, were examined by observation of ion induced emission and photoluminescence (PL). Various emission bands attributed to different defect sites in the band gap were observed at the initial irradiation stage. As the dose increased, the emissions via the trapping sites decreased in intensity while the band-edge emission developed. This suggests that the ion irradiation would remove almost all the trapping sites in the band gap. The low energy emissions, which show a multiexponential decay, were due to a donor-acceptor recombination between the deeply trapped carriers. It was found that the processes of formation, reaction, and stabilization of the trapping sites would predominantly occur under the photooxidizing conditions. (author)

Tuning the antiferromagnetic to ferromagnetic phase transition in FeRh thin films by means of low-energy/low fluence ion irradiation

Energy Technology Data Exchange (ETDEWEB)

Heidarian, A.; Bali, R.; Grenzer, J.; Wilhelm, R.A.; Heller, R.; Yildirim, O.; Lindner, J.; Potzger, K.

2015-09-01

Ion irradiation induced modifications of the thermomagnetic properties of equiatomic FeRh thin films have been investigated. The application of 20 keV Ne{sup +} ions at different fluencies leads to broadening of the antiferromagnetic to ferromagnetic phase transition as well as a shift of the transition temperature towards lower temperatures with increasing ion fluence. Moreover, the ferromagnetic background at low temperatures generated by the ion irradiation leads to pronounced saturation magnetisation at 5 K. Complete erasure of the transition, i.e. ferromagnetic ordering through the whole temperature regime was achieved at a Ne{sup +} fluence of 3 × 10{sup 14} ions/cm{sup 2}. It does not coincide with the complete randomization of the chemical ordering of the crystal lattice.

Momenta of particles emitted by target at intensive irradiation by low-energy ions

CERN Document Server

Beshenkov, V G; Marchenko, V A

2002-01-01

One measured the aggregate momenta of the target emitted particles at the intensive sputtering by E sub 0 approx = 0.5 keV energy heavy inert gases. For liquid and being under premelting temperature Ga target the measured values are close to the expected momenta of sputtered metallic atoms and reflection ions, for Cu and Zr targets they are essentially higher. One assumes that sputtering of atoms of gas-diffuser implanted into the target causes the surplus momentum. The estimated average energy of these atoms approx = 20 eV. Under Ga irradiation the implanted atoms diffuse mainly towards the surface and are desorbed

Spectroscopic characterization of ion-irradiated multi-layer graphenes

Energy Technology Data Exchange (ETDEWEB)

Tsukagoshi, Akira [Graduate School of Engineering, University of Hyogo, Himeji, Hyogo 671-2280 (Japan); RIKEN SPring-8 Center, Sayo, Hyogo 679-5148 (Japan); Honda, Shin-ichi, E-mail: s-honda@eng.u-hyogo.ac.jp [Graduate School of Engineering, University of Hyogo, Himeji, Hyogo 671-2280 (Japan); RIKEN SPring-8 Center, Sayo, Hyogo 679-5148 (Japan); Osugi, Ryo [Graduate School of Engineering, University of Hyogo, Himeji, Hyogo 671-2280 (Japan); RIKEN SPring-8 Center, Sayo, Hyogo 679-5148 (Japan); Okada, Hiraku [Graduate School of Engineering, University of Hyogo, Himeji, Hyogo 671-2280 (Japan); Niibe, Masahito [Laboratory of Advanced Science and Technology for Industry, University of Hyogo, Kamigori, Hyogo 678-1205 (Japan); Terasawa, Mititaka [Laboratory of Advanced Science and Technology for Industry, University of Hyogo, Kamigori, Hyogo 678-1205 (Japan); RIKEN SPring-8 Center, Sayo, Hyogo 679-5148 (Japan); Hirase, Ryuji; Izumi, Hirokazu; Yoshioka, Hideki [Hyogo Prefectural Institute of Technology, Kobe 654-0037 (Japan); Niwase, Keisuke [Hyogo University of Teacher Education, Kato, Hyogo 673-1494 (Japan); Taguchi, Eiji [Research Center for Ultra-High Voltage Electron Microscopy, Osaka University, Ibaraki, Osaka 567-0047 (Japan); Lee, Kuei-Yi [Department of Electronic Engineering, National Taiwan University of Science and Technology, Taipei 106, Taiwan (China); Oura, Masaki [RIKEN SPring-8 Center, Sayo, Hyogo 679-5148 (Japan)

2013-11-15

Low-energy Ar ions (0.5–2 keV) were irradiated to multi-layer graphenes and the damage process, the local electronic states, and the degree of alignment of the basal plane, and the oxidation process upon ion irradiation were investigated by Raman spectroscopy, soft X-ray absorption spectroscopy (XAS) and in situ X-ray photoelectron spectroscopy (XPS). By Raman spectroscopy, we observed two stages similar to the case of irradiated graphite, which should relate to the accumulations of vacancies and turbulence of the basal plane, respectively. XAS analysis indicated that the number of sp{sup 2}-hybridized carbon (sp{sup 2}-C) atoms decreased after ion irradiation. Angle-resolved XAS revealed that the orientation parameter (OP) decreased with increasing ion energy and fluence, reflecting the turbulence of the basal plane under irradiation. In situ XPS shows the oxidation of the irradiated multi-layer graphenes after air exposure.

Progress and tendency in heavy ion irradiation mutation breeding

International Nuclear Information System (INIS)

Zhou Libin; Li Wenjian; Qu Ying; Li Ping

2008-01-01

In recent years, the intermediate energy heavy ion biology has been concerned rarely comparing to that of the low-energy ions. In this paper, we summarized the advantage of a new mutation breeding method mediated by intermediate energy heavy ion irradiations. Meanwhile, the present state of this mutation technique in applications of the breeding in grain crops, cash crops and model plants were introduced. And the preview of the heavy ion irradiations in gene-transfer, molecular marker assisted selection and spaceflight mutation breeding operations were also presented. (authors)

Radiation blistering of niobium in sequence irradiated by helium ions with different energy

International Nuclear Information System (INIS)

Das, S.K.; Kaminskij, M.S.; Guseva, M.I.; Gusev, V.M.; Krasulin, Yu.L.; Martynenko, Yu.V.; Rozina, I.A.

1977-01-01

The results of the investigation of the blistering of the surface of polycrystalline niobium foils subjected to successive irradiation by helium ions of energies of 3 to 50 keV are reported. The critical doses of irradiation, the types of blisters and the rate of erosion were determined. A comparative analysis of the formation of blisters on cold-rolled and annealed niobium has been made. On cold-rolled niobium the blistering is mainly due to ions with energies of 3 to 80 keV, on annealed niobium of 100 to 500 keV. The erosion of cold-rolled niobium takes place through blisters formed by the action of helium ions with energies of the order of 45 keV, and that of annealed niobium, through helium ions with energies of 100 to 500 keV. The observed differences in the formation of blisters on niobium irradiated with helium ions of a wide range of energies are explained by the change in the diffusion kinetics of implanted ions having a uniform distribution across the thickness of the target

Mutagenic effects of heavy ion irradiation on rice seeds

International Nuclear Information System (INIS)

Xu Xue; Liu Binmei; Zhang Lili; Wu Yuejin

2012-01-01

Three varieties of rice seeds were subjected to irradiation using low-energy and medium-energy ions. The damage and mutations induced by the ions were examined. In addition, genetic analysis and gene mapping of spotted leaf (spl) mutants were performed. Low-energy ions had no significant influence on germination, survival or seedling height, except for the survival of Nipponbare. Medium-energy ions had a significant influence on germination and survival but had no significant effect on seedling height. In the low-energy group, among 60,000 M 2 plants, 2823 putative morphological mutants were found, and the mutation frequency was approximately 4.71%. In the medium-energy group, 3132 putative morphological mutants were found, and the mutation frequency was approximately 5.22%. Five spl mutants (spl29–spl33) were obtained by ion irradiation, and the heredity of the spl mutants was stable. The characteristics of the spl mutants were found, by genetic analysis and preliminary mapping, to be controlled by a single recessive gene, and spl30 and spl33 were found to be new lesion-mimic mutants.

Mutagenic effects of heavy ion irradiation on rice seeds

Energy Technology Data Exchange (ETDEWEB)

Xu Xue [School of Agronomy, Anhui Agricultural University, 130 Changjiang West Road, Hefei 230036 (China); Key Laboratory of Ion Beam Bio-Engineering, Institute of Technical Biology and Agriculture Engineering, 350 Shushanhu Road, Hefei 230031 (China); Liu Binmei; Zhang Lili [Key Laboratory of Ion Beam Bio-Engineering, Institute of Technical Biology and Agriculture Engineering, 350 Shushanhu Road, Hefei 230031 (China); Wu Yuejin, E-mail: yjwu@ipp.ac.cn [Key Laboratory of Ion Beam Bio-Engineering, Institute of Technical Biology and Agriculture Engineering, 350 Shushanhu Road, Hefei 230031 (China)

2012-11-01

Three varieties of rice seeds were subjected to irradiation using low-energy and medium-energy ions. The damage and mutations induced by the ions were examined. In addition, genetic analysis and gene mapping of spotted leaf (spl) mutants were performed. Low-energy ions had no significant influence on germination, survival or seedling height, except for the survival of Nipponbare. Medium-energy ions had a significant influence on germination and survival but had no significant effect on seedling height. In the low-energy group, among 60,000 M{sub 2} plants, 2823 putative morphological mutants were found, and the mutation frequency was approximately 4.71%. In the medium-energy group, 3132 putative morphological mutants were found, and the mutation frequency was approximately 5.22%. Five spl mutants (spl29-spl33) were obtained by ion irradiation, and the heredity of the spl mutants was stable. The characteristics of the spl mutants were found, by genetic analysis and preliminary mapping, to be controlled by a single recessive gene, and spl30 and spl33 were found to be new lesion-mimic mutants.

ECR ion source based low energy ion beam facility

Indian Academy of Sciences (India)

Mass analyzed highly charged ion beams of energy ranging from a few keV to a few MeV plays an important role in various aspects of research in modern physics. In this paper a unique low energy ion beam facility (LEIBF) set up at Nuclear Science Centre (NSC) for providing low and medium energy multiply charged ion ...

Tuning of the optical properties of In-rich InxGa1−xN (x=0.82−0.49) alloys by light-ion irradiation at low energy

International Nuclear Information System (INIS)

De Luca, Marta; Polimeni, Antonio; Capizzi, Mario; Pettinari, Giorgio; Ciatto, Gianluca; Fonda, Emiliano; Amidani, Lucia; Boscherini, Federico; Filippone, Francesco; Bonapasta, Aldo Amore; Knübel, Andreas; Cimalla, Volker; Ambacher, Oliver; Giubertoni, Damiano; Bersani, Massimo

2013-01-01

The effects of low-energy irradiation by light ions (H and He) on the properties of In-rich In x Ga 1−x N alloys are investigated by optical and structural techniques. H-irradiation gives rise to a remarkable blue-shift of light emission and absorption edge energies. X-ray absorption measurements and first-principle calculations address the microscopic origin of these effects

Low-energy ion-beam deposition apparatus equipped with surface analysis system

International Nuclear Information System (INIS)

Ohno, Hideki; Aoki, Yasushi; Nagai, Siro.

1994-10-01

A sophisticated apparatus for low energy ion beam deposition (IBD) was installed at Takasaki Radiation Chemistry Research Establishment of JAERI in March 1991. The apparatus is composed of an IBD system and a real time/in-situ surface analysis system for diagnosing deposited thin films. The IBD system provides various kinds of low energy ion down to 10 eV with current density of 10 μA/cm 2 and irradiation area of 15x15 mm 2 . The surface analysis system consists of RHEED, AES, ISS and SIMS. This report describes the characteristics and the operation procedure of the apparatus together with some experimental results on depositing thin carbon films. (author)

Stability of uranium silicides during high energy ion irradiation

International Nuclear Information System (INIS)

Birtcher, R.C; Wang, L.M.

1991-11-01

Changes induced by 1.5 MeV Kr ion irradiation of both U 3 Si and U 3 Si 2 have been followed by in situ transmission electron microscopy. When irradiated at sufficiently low temperatures, both alloys transform from the crystalline to the amorphous state. When irradiated at temperatures above the temperature limit for ion beam amorphization, both compounds disorder with the Martensite twin structure in U 3 Si disappearing from view in TEM. Prolonged irradiation of the disordered crystalline phases results in nucleation of small crystallites within the initially large crystal grains. The new crystallites increase in number during continued irradiation until a fine grain structure is formed. Electron diffraction yields a powder-like diffraction pattern that indicates a random alignment of the small crystallites. During a second irradiation at lower temperatures, the small crystallizes retard amorphization. After 2 dpa at high temperatures, the amorphization dose is increased by over twenty times compared to that of initially unirradiated material

Effect of Ge nanocluster assembly self-organization at pulsed irradiation by low-energy ions during heteroepitaxy on Si

CERN Document Server

Dvurechenskij, A V; Smagina, Z V

2001-01-01

Using the method of scanning microscopy one studied experimentally size distribution of Ge clusters formed in course of experiments of two types at Ge heteroepitaxy on Si(111): regular process of molecular-beam epitaxy (MBE); pulse irradiation by approx = 200 eV energy Ge ions. The experiments were conducted at 350 deg C temperature. Pulse irradiation by an ion beam during heteroepitaxy was detected to result in reduction of the average size of Ge clusters, in compacting of their density and in reduction of mean square deviation from the average value in contrast to similar values in experiments devoted to regular MBE

Damage growth in Si during self-ion irradiation: A study of ion effects over an extended energy range

International Nuclear Information System (INIS)

Holland, O.W.; El-Ghor, M.K.; White, C.W.

1989-01-01

Damage nucleation/growth in single-crystal Si during ion irradiation is discussed. For MeV ions, the rate of growth as well as the damage morphology are shown to vary widely along the track of the ion. This is attributed to a change in the dominant, defect-related reactions as the ion penetrates the crystal. The nature of these reactions were elucidated by studying the interaction of MeV ions with different types of defects. The defects were introduced into the Si crystal prior to high-energy irradiation by self-ion implantation at a medium energy (100 keV). Varied damage morphologies were produced by implanting different ion fluences. Electron microscopy and ion-channeling measurements, in conjunction with annealing studies, were used to characterize the damage. Subtle changes in the predamage morphology are shown to result in markedly different responses to the high-energy irradiation, ranging from complete annealing of the damage to rapid growth. These divergent responses occur over a narrow range of dose (2--3 times 10 14 cm -2 ) of the medium-energy ions; this range also marks a transition in the growth behavior of the damage during the predamage implantation. A model is proposed which accounts for these observations and provides insight into ion-induced growth of amorphous layers in Si and the role of the amorphous/crystalline interface in this process. 15 refs, 9 figs

High energy argon ion irradiations of polycrystalline iron

International Nuclear Information System (INIS)

Dunlop, A.; Lesueur, D.; Lorenzelli, N.; Boulanger, L.

1986-09-01

We present here the results of our recent irradiations of polycrystalline iron targets with very energetic (1.76 GeV) Ar ions. The targets consist of piles of thin iron samples, the total thickness of each target being somewhat greater than the theoretical range (450 μm) of the ions. We can thus separate the phenomena which occur at different average energies of the ions and study during the slowing-down process: the different types of induced nuclear reactions. They allow us to determine the experimental range of the ions, the defect profiles in the targets, the structure of the displacement cascades (electron microscopy) and their stability

Ion-irradiation-induced defects in bundles of carbon nanotubes

International Nuclear Information System (INIS)

Salonen, E.; Krasheninnikov, A.V.; Nordlund, K.

2002-01-01

We study the structure and formation yields of atomic-scale defects produced by low-dose Ar ion irradiation in bundles of single-wall carbon nanotubes. For this, we employ empirical potential molecular dynamics and simulate ion impact events over an energy range of 100-1000 eV. We show that the most common defects produced at all energies are vacancies on nanotube walls, which at low temperatures are metastable but long-lived defects. We further calculate the spatial distribution of the defects, which proved to be highly non-uniform. We also show that ion irradiation gives rise to the formations of inter-tube covalent bonds mediated by carbon recoils and nanotube lattice distortions due to dangling bond saturation. The number of inter-tube links, as well as the overall damage, linearly grows with the energy of incident ions

A correlation between micro- and nano-indentation on materials irradiated by high-energy heavy ions

Science.gov (United States)

Yang, Yitao; Zhang, Chonghong; Ding, Zhaonan; Su, Changhao; Yan, Tingxing; Song, Yin; Cheng, Yuguang

2018-01-01

Hardness testing is an efficient means of assessing the mechanical properties of materials due to the small sampling volume requirement. Previous studies have established the correlation between flow stress and Vickers hardness. However, the damage layer produced by ions irradiation with low energy is too thin to perform Vickers hardness test, which is usually measured by nano-indentation. Therefore, it is necessary to correlate the Vickers hardness and nano-hardness for the convenience of assessing mechanical properties of materials under irradiation. In this study, various materials (pure nickel, nickel base alloys and oxide dispersion strengthened steel) were irradiated with high-energy heavy ions to different damage levels. After irradiation, micro- and nano-indentation were performed to characterize the change in hardness. Due to indentation size effect (ISE), the hardness was dependent of load or depth. Therefore, Nix-Gao model was used to obtain the hardness without ISE (Hv0 and Hnano_0). The determined Hv0 was plotted as a function of the corresponding Hnano_0, then a good linear relation was found between Vickers hardness and nano-hardness, and a coefficient was determined to be 81.0 ± 10.5, namely, Hv 0 = 81.0Hnano _ 0 (Hv0 with unit of kgf/mm2, Hnano_0 with unit of GPa). This correlation was based on the data from various materials, therefore it was independent of materials. Based on the established correlation and nano-indentation results, the change fraction in yield stress of Inconel 718 and pure Ni with ion irradiation was compared with that with neutron irradiation. The data of Inconel 718 with heavy ion irradiation was in good agreement with the data with neutron irradiation, which was a good demonstration for the validation of the established correlation. However, a distinctive difference in change fraction of yield stress was seen for pure Ni under heavy ion irradiation and neutron irradiation, which was attributed to the difference in samples

Electronic energy loss of the latent track in heavy ion-irradiated polyimide

International Nuclear Information System (INIS)

Sun Youmei; Liu Jie; Zhang Chonghong; Wang Zhiguang; Jin Yunfan; Duan Jinglai; Song Yin

2005-01-01

In the interaction process of a swift heavy ion (SHI) and polymer, a latent track with radius of several nanometers appears near the ion trajectory due to the dense ionization and excitation. To describe the role of electronic energy loss (dE/dX) e , multi-layer stacks (with different dE/dX) of polyimide (PI) films were irradiated by different SHIs (1.158 GeV Fe 56 and 1.755 GeV Xe 136 ) under vacuum at room temperature. Chemical changes of modified PI films were studied by Fourier Transform Infrared (FTIR) spectroscopy. The main feature of SHI irradiation is the degradation of the functional group and creation of alkyne. The chain disruption rate of PI was investigated in the fluence range from 1 x 10 11 to 6 x 10 12 ions/cm 2 and a wider energy stopping power range (2.2 to 5.2 keV/nm for Fe 56 ions and 8.6 to 11.3 keV/nm for Xe 136 ions). Alkyne formation was observed over the electronic energy loss range of interest. Assuming the saturated track model (the damage process only occur in a cylinder of area σ), the mean degradation and alkyne formation radii in tracks were deduced for Fe and Xe ion irradiation, respectively. The results were validated by the thermal spike model and the threshold electronic energy loss of track formation S et in PI was deduced. The analysis of the irradiated PI films shows that the predictions of the thermal spike model are in qualitative agreement with the curve shape of experimental results. (authors)

Photoluminescence and reflectivity studies of high energy light ions irradiated polymethyl methacrylate films

Science.gov (United States)

Bharti, Madhu Lata; Singh, Fouran; Ramola, R. C.; Joshi, Veena

2017-11-01

The self-standing films of non-conducting polymethyl methacrylate (PMMA) were irradiated in vacuum using high energy light ions (HELIs) of 50 MeV Lithium (Li+3) and 80 MeV Carbon (C+5) at various ion dose to induce the optical changes in the films. Upon HELI irradiation, films exhibit a significant enhancement in optical reflectivity at the highest dose. Interestingly, the photoluminescence (PL) emission band with green light at (514.5 nm) shows a noticeable increase in the intensity with increasing ion dose for both ions. However, the rate of increase in PL intensity is different for both HELI and can be correlated with the linear energy transfer by these ions in the films. Origin of PL is attributed to the formation of carbon cluster and hydrogenated amorphous carbon in the polymer films. HAC clusters act as PL active centres with optical reflectivity. Most of the harmful radiation like UV are absorbed by the material and is becoming opaque after irradiation and this PL active material are useful in fabrication of optoelectronic devices, UV-filter, back-lit components in liquid crystal display systems, micro-components for integrate optical circuits, diffractive elements, advanced materials and are also applicable to the post irradiation laser treatment by means of ion irradiation.

Food irradiation by low energy electrons

International Nuclear Information System (INIS)

Bird, J.R.

1985-01-01

For some special cases, the use of low energy electrons has advantages over the use of gamma-rays or higher energy electrons for the direct irradiation of food. These advantages arise from details of the interaction processes which are responsible for the production of physical, chemical and biological effects. Factors involved include depth of penetration, dose distribution, irradiation geometry, the possible production of radioactivity and costs

Irradiation effects on c-axis lattice parameter in EuBa{sub 2}Cu{sub 3}O{sub y} irradiated with energetic ions

Energy Technology Data Exchange (ETDEWEB)

Ishikawa, Norito; Chimi, Yasuhiro; Iwase, Akihiro; Maeta, Hiroshi [Japan Atomic Energy Research Inst., Tokai, Ibaraki (Japan). Tokai Research Establishment; Tsuru, Koji; Michikami, Osamu

1997-03-01

We report an irradiation effect on c-axis lattice parameter in EuBa{sub 2}Cu{sub 3}O{sub y} oxide superconductors when irradiated with ions of energy ranging from 0.85 to 200 MeV. For the irradiation with low energy (0.85-2 MeV) ions, the defect production and the resultant c-axis lattice expansion were dominated by elastic collisions. On the other hand, for the irradiation with high energy (120-200 MeV) ions, the change in the c-axis lattice parameter was found to be much greater than that expected from the elastic displacement of target atoms. For high energy ion irradiation we could observe the excessive increase of c-axis lattice parameter reflecting additional production of defects which can be attributed to the electronic excitation. The large increase in c-axis lattice parameter due to high energy ion irradiation should be taken into account for the study on the interaction between vortices and irradiation-induced defects. (author)

High-energy xenon ion irradiation effects on the electrical properties of yttrium iron garnet

International Nuclear Information System (INIS)

Costantini, J.M.; Flament, J.L.; Sinopoli, L.; Trochon, J.; Uzureau, J.L.; Groult, D.; Studer, F.; Toulemonde, M.

1989-01-01

Thin monocristalline samples of yttrium iron garnet Y 3 Fe 5 O 12 (YIG) were irradiated at room temperature with 27 MeV/A 132 Xe ions at varying fluences up to 3.5 x 10 12 ions cm -2 . Sample thickness (100 μm) was smaller than the mean projected range of ions (170 μm) so that we were able to study the effects of irradiation damage solely. At such a high ion energy the nuclear energy loss is negligible and damage is mainly due to electronic excitation energy loss. YIG d.c conductivity is found to rise by a factor 40 for the highest dose while the permittivity increases only slightly after irradiation (40% max.). The dielectric losses are also enhanced as the ion fluence increases especially at lower frequencies (by a factor 6 at 10 KHz). No dielectric relaxation peak is observed in the frequency range explored here (10 KHz - 10 MHz)

Direct observation of cascade defect formation at low temperatures in ion-irradiated metals

International Nuclear Information System (INIS)

Muroga, T.; Hirooka, K.; Ishino, S.

1984-01-01

Direct transmission electron microscopy observations of cascade defect formation have been carried out in gold, Type 316 stainless steel, and aluminum irradiated by Al + , Ar - , and Xe + ions with energies between 80 and 400 keV. By utilizing a link of an ion accelerator to an electron microscope, in situ observations at low temperature (-150 0 C) have become possible. In gold, subcascade structures are clearly observed in all cases. Obvious dependence on projectile mass and energy is observed for cascade structure and vacancy clustering efficiency in gold and for defect visibility in aluminum and Type 316 stainless steel. A computer simulation calculation using MARLOWE shows subcascade distributions a little smaller in size and larger in number than the present observation

Development of a pepper-pot emittance meter for diagnostics of low-energy multiply charged heavy ion beams extracted from an ECR ion source

Energy Technology Data Exchange (ETDEWEB)

Nagatomo, T., E-mail: nagatomo@riken.jp; Kase, M.; Kamigaito, O.; Nakagawa, T. [Nishina Center for Accelerator Based Science, RIKEN, Wako, Saitama 351-0198 (Japan); Tzoganis, V. [Nishina Center for Accelerator Based Science, RIKEN, Wako, Saitama 351-0198 (Japan); Cockcroft Institute, Daresbury, Warrington WA4 4AD (United Kingdom); Department of Physics, University of Liverpool, Liverpool, Merseyside L69 3BX (United Kingdom)

2016-02-15

Several fluorescent materials were tested for use in the imaging screen of a pepper-pot emittance meter that is suitable for investigating the beam dynamics of multiply charged heavy ions extracted from an ECR ion source. SiO{sub 2} (quartz), KBr, Eu-doped CaF{sub 2}, and Tl-doped CsI crystals were first irradiated with 6.52-keV protons to determine the effects of radiation damage on their fluorescence emission properties. For such a low-energy proton beam, only the quartz was found to be a suitable fluorescent material, since the other materials suffered a decay in fluorescence intensity with irradiation time. Subsequently, quartz was irradiated with heavy {sup 12}C{sup 4+}, {sup 16}O{sup 4+}, and {sup 40}Ar{sup 11+} ions, but it was found that the fluorescence intensity decreased too rapidly to measure the emittance of these heavy-ion beams. These results suggest that a different energy loss mechanism occurs for heavier ions and for protons.

Synthesis of 5'-CMP and 5'-dCMP in aqueous solution induced by low energy ions implantation

International Nuclear Information System (INIS)

Shi Huaibin; Shao Chunlin; Wang Xiangqin; Yu Zengliang

2001-01-01

Low energy N + ions produced by N 2 are accelerated and then introduced into aqueous solution to induce chemical reactions. This process avoids the need of a vacuum chamber and makes it possible to investigate the actions of low energy ions in aqueous solution. In order to explore prebiotic synthesis of nucleotide via reaction between low energy ions and aqueous solution under the primitive earth conditions, low energy N + is implanted into aqueous solution containing cytosine, D-ribose, D-2-deoxyribose and NH 4 H 2 PO 4 . It is confirmed that 5'-CMP and 5'-dCMP are produced by HPLC and 1 H-NMR analyses. The relation between yields of 5'-CMP and 5'-dCMP and irradiation time has been obtained

Irradiation effects of Ar cluster ion beams on Si substrates

International Nuclear Information System (INIS)

Ishii, Masahiro; Sugahara, Gaku; Takaoka, G.H.; Yamada, Isao

1993-01-01

Gas-cluster ion beams can be applied to new surface modification techniques such as surface cleaning, low damage sputtering and shallow junction formation. The effects of energetic Ar cluster impacts on solid surface were studied for cluster energies of 10-30keV. Irradiation effects were studied by RBS. For Si(111) substrates, irradiated with Ar ≥500 clusters to a dose of 1x10 15 ion/cm 2 at acceleration voltage 15kV, 2x10 14 atoms/cm 2 implanted Ar atoms were detected. In this case, the energy per cluster atom was smaller than 30eV; at this energy, no significant implantation occurs in the case of monomer ions. Ar cluster implantation into Si substrates occurred due to the high energy density irradiation. (author)

Thermal stability of low dose Ga+ ion irradiated spin valves

International Nuclear Information System (INIS)

Qi Xianjin; Wang Yingang; Zhou Guanghong; Li Ziquan

2009-01-01

The thermal stability of low dose Ga + ion irradiated spin valves has been investigated and compared with that of the as-prepared ones. The dependences of exchange field, measured using vibrating sample magnetometer at room temperature, on magnetic field sweep rate and time spent at negative saturation of the pinned ferromagnetic layer, and training effect were explored. The training effect is observed on both the irradiated spin valves and the as-prepared ones. The magnetic field sweep rate dependence of the exchange bias field of the irradiated spin valves is nearly the same as that of the as-prepared ones. For the as-prepared structure thermal activation has been observed, which showed that holding the irradiated structure at negative saturation of the pinned ferromagnetic layer for up to 28 hours results in no change in the exchange field. The results indicate that the thermal stability of the ion irradiated spin valves is the same as or even better than the as-prepared ones.

Recovery effects due to the interaction between nuclear and electronic energy losses in SiC irradiated with a dual-ion beam

Energy Technology Data Exchange (ETDEWEB)

Thomé, Lionel, E-mail: thome@csnsm.in2p3.fr; Debelle, Aurélien; Garrido, Frédérico; Sattonnay, Gaël; Mylonas, Stamatis [Centre de Sciences Nucléaires et de Sciences de la Matière, CNRS-IN2P3-Université Paris-Sud, Bât. 108, F-91405 Orsay (France); Velisa, Gihan [CEA, DEN, Service de Recherches de Métallurgie Physique, Laboratoire JANNUS, F-91191 Gif-sur-Yvette (France); Horia Hulubei National Institute for Physics and Nuclear Engineering, P.O.B. MG-6, 077125 Magurele (Romania); Miro, Sandrine; Trocellier, Patrick; Serruys, Yves [CEA, DEN, Service de Recherches de Métallurgie Physique, Laboratoire JANNUS, F-91191 Gif-sur-Yvette (France)

2015-03-14

Single and dual-beam ion irradiations of silicon carbide (SiC) were performed to study possible Synergetic effects between Nuclear (S{sub n}) and Electronic (S{sub e}) Energy Losses. Results obtained combining Rutherford backscattering in channeling conditions, Raman spectroscopy, and transmission electron microscopy techniques show that dual-beam irradiation of SiC induces a dramatic change in the final sample microstructure with a substantial decrease of radiation damage as compared to single-beam irradiation. Actually, a defective layer containing dislocations is formed upon dual-beam irradiation (S{sub n} and S{sub e}), whereas single low-energy irradiation (S{sub n} alone) or even sequential (S{sub n} + S{sub e}) irradiations lead to full amorphization. The healing process is ascribed to the electronic excitation arising from the electronic energy loss of swift ions. These results shed new light on the long-standing puzzling problem of the existence of a possible synergy between S{sub n} and S{sub e} in ion-irradiation experiments. This work is interesting for both fundamental understanding of the ion-solid interactions and technological applications in the nuclear industry where recovery S{sub n}/S{sub e} effects may preserve the integrity of nuclear devices.

Tuning of the optical properties of In-rich In{sub x}Ga{sub 1−x}N (x=0.82−0.49) alloys by light-ion irradiation at low energy

Energy Technology Data Exchange (ETDEWEB)

De Luca, Marta; Polimeni, Antonio; Capizzi, Mario [Dipartimento di Fisica, Sapienza Università di Roma, P.le A. Moro 2, 00185 Roma (Italy); Pettinari, Giorgio [School of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD (United Kingdom); Ciatto, Gianluca; Fonda, Emiliano [Synchrotron SOLEIL, L' Orme des Merisiers, Saint-Aubin, BP 48, 91192 Gif sur Yvette Cedex (France); Amidani, Lucia; Boscherini, Federico [Department of Physics and CNISM, University of Bologna, V. le C. Berti Pichat 6/2, 40127 Bologna (Italy); Filippone, Francesco; Bonapasta, Aldo Amore [CNR-Istituto di Struttura della Materia (ISM), Via Salaria Km 29.5, CP 10, I-00016 Monterotondo Stazione (Italy); Knübel, Andreas; Cimalla, Volker; Ambacher, Oliver [Fraunhofer Institute for Applied Solid State Physics, Tullastr. 72, 79108 Freiburg (Germany); Giubertoni, Damiano; Bersani, Massimo [CMM - Fondazione Bruno Kessler, Trieste, via Sommarive 18, 38100, Povo Trento (Italy)

2013-12-04

The effects of low-energy irradiation by light ions (H and He) on the properties of In-rich In{sub x}Ga{sub 1−x}N alloys are investigated by optical and structural techniques. H-irradiation gives rise to a remarkable blue-shift of light emission and absorption edge energies. X-ray absorption measurements and first-principle calculations address the microscopic origin of these effects.

Ions irradiation on bi-layer coatings

Science.gov (United States)

Tessarolo, Enrico; Corso, Alain Jody; Böttger, Roman; Martucci, Alessandro; Pelizzo, Maria G.

2017-09-01

Future space missions will operate in very harsh and extreme environments. Optical and electronics components need to be optimized and qualified in view of such operational challenges. This work focuses on the effect of low alpha particles irradiation on coatings. Low energy He+ (4 keV and 16 keV) ions have been considered in order to simulate in laboratory the irradiation of solar wind (slow and fast components) alpha particles. Mono- and proper bi-layers coatings have been investigated. The experimental tests have been carried out changing doses as well as fluxes during the irradiation sessions. Optical characterization in the UV-VIS spectral range and superficial morphological analysis have performed prior and after irradiation.

Neurogenic Effects of Low-Dose Whole-Body HZE (Fe) Ion and Gamma Irradiation.

Science.gov (United States)

Sweet, Tara B; Hurley, Sean D; Wu, Michael D; Olschowka, John A; Williams, Jacqueline P; O'Banion, M Kerry

2016-12-01

Understanding the dose-toxicity profile of radiation is critical when evaluating potential health risks associated with natural and man-made sources in our environment. The purpose of this study was to evaluate the effects of low-dose whole-body high-energy charged (HZE) iron (Fe) ions and low-energy gamma exposure on proliferation and differentiation of adult-born neurons within the dentate gyrus of the hippocampus, cells deemed to play a critical role in memory regulation. To determine the dose-response characteristics of the brain to whole-body Fe-ion vs. gamma-radiation exposure, C57BL/6J mice were irradiated with 1 GeV/n Fe ions or a static 137 Cs source (0.662 MeV) at doses ranging from 0 to 300 cGy. The neurogenesis was analyzed at 48 h and one month postirradiation. These experiments revealed that whole-body exposure to either Fe ions or gamma radiation leads to: 1. An acute decrease in cell division within the dentate gyrus of the hippocampus, detected at doses as low as 30 and 100 cGy for Fe ions and gamma radiation, respectively; and 2. A reduction in newly differentiated neurons (DCX immunoreactivity) at one month postirradiation, with significant decreases detected at doses as low as 100 cGy for both Fe ions and gamma rays. The data presented here contribute to our understanding of brain responses to whole-body Fe ions and gamma rays and may help inform health-risk evaluations related to systemic exposure during a medical or radiologic/nuclear event or as a result of prolonged space travel.

Hardness enhancement and crosslinking mechanisms in polystyrene irradiated with high energy ion-beams

International Nuclear Information System (INIS)

Lee, E.H.; Rao, G.R.; Mansur, L.K.

1996-01-01

Surface hardness values several times larger than steel were produced using high energy ion beams at several hundred keV to MeV. High LET is important for crosslinking. Crosslinking is studied by analyzing hardness variations in response to irradiation parameter such as ion species, energy, and fluence. Effective crosslinking radii at hardness saturation are derived base on experimental data for 350 keV H + and 1 MeV Ar + irradiation of polystyrene. Saturation value for surface hardness is about 20 GPa

Radiation damage in urania crystals implanted with low-energy ions

Energy Technology Data Exchange (ETDEWEB)

Nguyen, Tien Hien, E-mail: tien-hien.nguyen@u-psud.fr [Centre de Sciences Nucléaires et de Sciences de la Matière (CSNSM – UMR 8609), CNRS-IN2P3-Université Paris-Sud, Bâtiments 104-108, 91405 Orsay Campus (France); Garrido, Frédérico; Debelle, Aurélien; Mylonas, Stamatis [Centre de Sciences Nucléaires et de Sciences de la Matière (CSNSM – UMR 8609), CNRS-IN2P3-Université Paris-Sud, Bâtiments 104-108, 91405 Orsay Campus (France); Nowicki, Lech [The Andrzej Soltan Institute for Nuclear Studies, Hoza 69, 00-681 Warsaw (Poland); Thomé, Lionel; Bourçois, Jérôme; Moeyaert, Jérémy [Centre de Sciences Nucléaires et de Sciences de la Matière (CSNSM – UMR 8609), CNRS-IN2P3-Université Paris-Sud, Bâtiments 104-108, 91405 Orsay Campus (France)

2014-05-01

Implantations with low-energy ions (470-keV Xe and 500-keV La with corresponding ion range Rp ∼ 85 nm and range straggling ΔRp ∼ 40 nm) have been performed to investigate both radiation and chemical effects due to the incorporation of different species in UO{sub 2} (urania) crystals. The presence of defects was monitored in situ after each implantation fluence step by the RBS/C technique. Channelling data were analysed afterwards by Monte-Carlo simulations with a model of defects involving (i) randomly displaced atoms (RDA) and (ii) distorted rows, i.e. bent channels (BC). While increasing the ion fluence, the accumulation of RDA leads to a steep increase of the defect fraction in the range from 4 to 7 dpa regardless of the nature of bombarding ions followed by a saturation plateau over a large dpa range. A clear difference of 6% in the yield of saturation plateaus between irradiation with Xe and La ions was observed. Conversely, the evolutions of the fraction of BC showed a similar regular increase with increasing ion fluence for both ions. Moreover, this increase is shifted to a larger fluence in comparison to the sharp increase step of RDA. This phenomenon indicates a continuous structural modification of UO{sub 2} crystals under irradiation unseen by the measurement of RDA.

Formation of plasmid DNA strand breaks induced by low-energy ion beam: indication of nuclear stopping effects

International Nuclear Information System (INIS)

Chen Yu; Jiang Bingyao; Chen Youshan; Ding Xingzhao; Liu Xianghuai; Chen Ceshi; Guo Xinyou; Yin Guanglin

1998-01-01

Plasmid pGEM 3zf(+) was irradiated by nitrogen ion beam with energies between 20 and 100 keV and the fluence kept as 1 x 10 12 ions/cm 2 . The irradiated plasmid was assayed by neutral electrophoresis and quantified by densitometry. The yields of DNA with single-strand and double-strand breaks first increased then decreased with increasing ion energy. There was a maximal yield value in the range of 20-100 keV. The relationship between DNA double-strand breaks (DSB) cross-section and linear energy transfer (LET) also showed a peak-shaped distribution. To understand the physical process during DNA strand breaks, a Monte Carlo calculation code known as TRIM (Transport of Ions in Matter) was used to simulate energy losses due to nuclear stopping and to electronic stopping. It can be assumed that nuclear stopping plays a more important role in DNA strand breaks than electronic stopping in this energy range. The physical mechanisms of DNA strand breaks induced by a low-energy ion beam are also discussed. (orig.)

Simulation of alpha decay of actinides in iron phosphate glasses by ion irradiation

Energy Technology Data Exchange (ETDEWEB)

Dube, Charu L., E-mail: dubecharu@gmail.com; Stennett, Martin C.; Gandy, Amy S.; Hyatt, Neil C.

2016-03-15

Highlights: • Alpha decay of actinides in iron phosphate glasses is simulated by employing ion irradiation technique. • FTIR and Raman spectroscopic measurements confirm modification of glass network. • The depolymerisation of glass network after irradiation is attributed to synergetic effect of nuclear and electronic losses. - Abstract: A surrogate approach of ion beam irradiation is employed to simulate alpha decay of actinides in iron phosphate nuclear waste glasses. Bismuth and helium ions of different energies have been selected for simulating glass matrix modification owing to radiolysis and ballistic damage due to recoil atoms. Structural modification and change in coordination number of network former were probed by employing Reflectance Fourier-Transform Infrared (FT-IR), and Raman spectroscopies as a consequence of ion irradiation. Depolymerisation is observed in glass sample irradiated at intermediate energy of 2 MeV. Helium blisters of micron size are seen in glass sample irradiated at low helium ion energy of 30 keV.

CoSi2 growth on Si(001) by reactive deposition epitaxy: Effects of high-flux, low-energy ion irradiation

International Nuclear Information System (INIS)

Lim, C. W.; Greene, J. E.; Petrov, I.

2006-01-01

CoSi 2 layers, CoSi 2 (parallel sign)(001) Si and [100] CoSi 2 (parallel sign)[100] Si , contain fourfold symmetric (111) twinned domains oriented such that (221) CoSi 2 (parallel sign)(001) Si and CoSi 2 (parallel sign)[110] Si . We demonstrate that high-flux low-energy (E Ar + =9.6 eV) Ar + ion irradiation during deposition dramatically increases the area fraction f u of untwinned regions from 0.17 in films grown under standard magnetically balanced conditions in which the ratio J Ar + /J Co of the incident Ar + to Co fluxes is 1.4 to 0.72 with J Ar + /J Co =13.3. TEM analyses show that the early stages of RDE CoSi 2 (001) film growth proceed via the Volmer-Weber mode with independent nucleation of both untwinned and twinned islands. Increasing J Ar + /J Co results in larger values of both the number density and area of untwinned with respect to twinned islands. The intense Ar + ion bombardment creates additional low-energy adsorption sites that favor the nucleation of untwinned islands while collisionally enhancing Co surface mobilities which, in turn, increases the probability of itinerant Co adatoms reaching these sites

Enhancement of optical absorption of Si (100) surfaces by low energy N+ ion beam irradiation

Science.gov (United States)

Bhowmik, Dipak; Karmakar, Prasanta

2018-05-01

The increase of optical absorption efficiency of Si (100) surface by 7 keV and 8 keV N+ ions bombardment has been reported here. A periodic ripple pattern on surface has been observed as well as silicon nitride is formed at the ion impact zones by these low energy N+ ion bombardment [P. Karmakar et al., J. Appl. Phys. 120, 025301 (2016)]. The light absorption efficiency increases due to the presence of silicon nitride compound as well as surface nanopatterns. The Atomic Force Microscopy (AFM) study shows the formation of periodic ripple pattern and increase of surface roughness with N+ ion energy. The enhancement of optical absorption by the ion bombarded Si, compared to the bare Si have been measured by UV - visible spectrophotometer.

Tuning the electronic properties of LaAlO3/SrTiO3 interfaces by irradiating the LaAlO3 surface with low-energy cluster ion beams

Science.gov (United States)

Ridier, Karl; Aureau, Damien; Bérini, Bruno; Dumont, Yves; Keller, Niels; Vigneron, Jackie; Etcheberry, Arnaud; Domengès, Bernadette; Fouchet, Arnaud

2018-01-01

We have investigated the effects of low-energy ion beam irradiations using argon clusters on the chemical and electronic properties of LaAlO3/SrTiO3 (LAO/STO) heterointerfaces by combining x-ray photoelectron spectroscopy (XPS) and electrical transport measurements. Due to its unique features, we demonstrate that a short-time cluster ion irradiation of the LAO surface induces significant modifications in the chemical properties of the buried STO substrate with (1) a lowering of Ti atoms oxidation states (from Ti4 + to Ti3 + and Ti2 +) correlated to the formation of oxygen vacancies at the LAO surface and (2) the creation of new surface states for Sr atoms. Contrary to what is generally observed by using higher energy ion beam techniques, this leads to an increase of the electrical conductivity at the LAO/STO interface. Our XPS data clearly reveal the existence of dynamical processes on the titanium and strontium atoms, which compete with the effect of the cluster ion beam irradiation. These relaxation effects are in part attributed to the diffusion of the ion-induced oxygen vacancies in the entire heterostructure since an increase of the interfacial metallicity is also evidenced far from the irradiated area. This paper highlights the possibility of tuning the electrical properties of LAO/STO interfaces by surface engineering, confirming experimentally the intimate connection between LAO chemistry and electronic properties of LAO/STO interfaces.

Importance of ion energy on SEU in CMOS SRAMs

Energy Technology Data Exchange (ETDEWEB)

Dodd, P.E.; Shaneyfelt, M.R.; Sexton, F.W.; Hash, G.L.; Winokur, P.S. [Sandia National Labs., Albuquerque, NM (United States); Musseau, O.; Leray, J.L. [CEA-DAM, Bruyeres-le-Chatel (France)

1998-03-01

The single-event upset (SEU) responses of 16 Kbit to 1 Mbit SRAMs irradiated with low and high-energy heavy ions are reported. Standard low-energy heavy ion tests appear to be sufficiently conservative for technologies down to 0.5 {micro}m.

High energy (MeV) ion-irradiated π-conjugated polyaniline: Transition from insulating state to carbonized conducting state

International Nuclear Information System (INIS)

Park, S.K.; Lee, S.Y.; Lee, C.S.; Kim, H.M.; Joo, J.; Beag, Y.W.; Koh, S.K.

2004-01-01

High energy (MeV) C 2+ , F 2+ , and Cl 2+ ions were irradiated onto π-conjugated polyaniline emeraldine base (PAN-EB) samples. The energy of an ion beam was controlled to a range of 3-4.5 MeV, with the ion dosage varying from 1x10 12 to 1x10 16 ions/cm 2 . The highest dc conductivity (σ dc ) at room temperature was measured to be ∼60 S/cm for 4.5 MeV Cl 2+ ion-irradiated PAN-EB samples with a dose of 1x10 16 ions/cm 2 . We observed the transition of high energy ion-irradiated PAN-EB samples from insulating state to conducting state as a function of ion dosage based on σ dc and its temperature dependence. The characteristic peaks of the Raman spectrum of the PAN-EB samples were reduced, while the D-peak (disordered peak) and the G peak (graphitic peak) appeared as the ion dose increased. From the analysis of the D and G peaks of the Raman spectra of the systems compared to multiwalled carbon nanotubes, ion-irradiated graphites, and annealed carbon films, the number of the clusters of hexagon rings with conducting sp 2 -bonded carbons increased with ion dosage. We also observed the increase in the size of the nanocrystalline graphitic domain of the systems with increasing ion dosage. The intensity of normalized electron paramagnelic resonance signal also increased in correlation with ion dose. The results of this study demonstrate that π-conjugated pristine PAN-EB systems changed from insulating state to carbonized conducting state through high energy ion irradiation with high ion dosage

Multiple relaxation processes in high-energy ion irradiated kapton-H polyimide: Thermally stimulated depolarization current study

International Nuclear Information System (INIS)

Garg, Maneesha; Quamara, J.K.

2006-01-01

High-energy ion irradiation effects on the thermally stimulated depolarization current (Tdc) behaviour of kapton-H samples (12.5 μm) irradiated with 50 MeV Li ion (fluence 5 x 10 4 , 10 5 and 5 x 10 5 ions/cm 2 ) have been investigated. The TSDC spectra of the irradiated samples reveal that the β-peak (appearing around 80-110 deg. C) associated with dipolar relaxation has been significantly affected owing to the demerization of carbonyl groups due to irradiation. The TSDC spectra also reveal a new relaxation process (termed as γ-relaxation) around 30 deg. C, due to increased water absorptivity in irradiated samples. The peak around 200 deg. C (α-peak) associated with space charge relaxation process also shows a behavioural change with ion irradiation. The peak not only shifts towards the higher temperature with increasing fluence but also show an increase in its activation energy (0.33-0.99 eV) with increasing polarizing field. The creation of new deep energy trap centers due to the formation of conjugated bonds after irradiation is responsible for this modification. The Cole-Cole distribution curves show the formation of new sub-polar group with different characteristic relaxation time

Low-energy ion outflow modulated by the solar wind energy input

Science.gov (United States)

Li, Kun; Wei, Yong; Andre, Mats; Eriksson, Anders; Haaland, Stein; Kronberg, Elena; Nilsson, Hans; Maes, Lukas

2017-04-01

Due to the spacecraft charging issue, it has been difficult to measure low-energy ions of ionospheric origin in the magnetosphere. A recent study taking advantage of the spacecraft electric potential has found that the previously 'hidden' low-energy ions is dominant in the magnetosphere. This comprehensive dataset of low-energy ions allows us to study the relationship between the ionospheric outflow and energy input from the solar wind (ɛ). In this study, we discuss the ratios of the solar wind energy input to the energy of the ionospheric outflow. We show that the ɛ controls the ionospheric outflow when the ɛ is high, while the ionospheric outflow does not systematically change with the ɛ when the ɛ is low.

High energy ion irradiation effects on polymer materials. LET dependence of G value of scission of polymethylmethacrylate (PMMA)

Energy Technology Data Exchange (ETDEWEB)

Kudoh, H; Sasuga, T; Seguchi, T [Japan Atomic Energy Research Inst., Takasaki, Gunma (Japan). Takasaki Radiation Chemistry Research Establishment

1997-03-01

Linear energy transfer (LET) dependence on the probability of main chain scission of polymethylmethacrylate (PMMA) was investigated. The probability was obtained from decreases in molecular weight measured by the gel permeation chromatography (GPC), and LET was evaluated by TRIM code. The scission probability as a function of LET was almost constant in the low LET, and decreased in the high LET ion irradiation. The mechanism was interpreted from the model of spur-overlapping along an ion`s path. (author)

Adaptive response of low linear energy transfer X-rays for protection against high linear energy transfer accelerated heavy ion-induced teratogenesis.

Science.gov (United States)

Wang, Bing; Ninomiya, Yasuharu; Tanaka, Kaoru; Maruyama, Kouichi; Varès, Guillaume; Eguchi-Kasai, Kiyomi; Nenoi, Mitsuru

2012-12-01

Adaptive response (AR) of low linear energy transfer (LET) irradiations for protection against teratogenesis induced by high LET irradiations is not well documented. In this study, induction of AR by X-rays against teratogenesis induced by accelerated heavy ions was examined in fetal mice. Irradiations of pregnant C57BL/6J mice were performed by delivering a priming low dose from X-rays at 0.05 or 0.30 Gy on gestation day 11 followed one day later by a challenge high dose from either X-rays or accelerated heavy ions. Monoenergetic beams of carbon, neon, silicon, and iron with the LET values of about 15, 30, 55, and 200 keV/μm, respectively, were examined. Significant suppression of teratogenic effects (fetal death, malformation of live fetuses, or low body weight) was used as the endpoint for judgment of a successful AR induction. Existence of AR induced by low-LET X-rays against teratogenic effect induced by high-LET accelerated heavy ions was demonstrated. The priming low dose of X-rays significantly reduced the occurrence of prenatal fetal death, malformation, and/or low body weight induced by the challenge high dose from either X-rays or accelerated heavy ions of carbon, neon or silicon but not iron particles. Successful AR induction appears to be a radiation quality event, depending on the LET value and/or the particle species of the challenge irradiations. These findings would provide a new insight into the study on radiation-induced AR in utero. © 2012 Wiley Periodicals, Inc.

Formation of hexagonal silicon carbide by high energy ion beam irradiation on Si (1 0 0) substrate

International Nuclear Information System (INIS)

Bhuyan, H; Favre, M; Valderrama, E; Avaria, G; Chuaqui, H; Mitchell, I; Wyndham, E; Saavedra, R; Paulraj, M

2007-01-01

We report the investigation of high energy ion beam irradiation on Si (1 0 0) substrates at room temperature using a low energy plasma focus (PF) device operating in methane gas. The unexposed and ion exposed substrates were characterized by x-ray diffraction, scanning electron microscopy (SEM), photothermal beam deflection, energy-dispersive x-ray analysis and atomic force microscopy (AFM) and the results are reported. The interaction of the pulsed PF ion beams, with characteristic energy in the 60-450 keV range, with the Si surface, results in the formation of a surface layer of hexagonal silicon carbide. The SEM and AFM analyses indicate clear step bunching on the silicon carbide surface with an average step height of 50 nm and a terrace width of 800 nm

Pulsed EPR study of low-dose irradiation effects in L-alanine crystals irradiated with γ-rays, Ne and Si ion beams

International Nuclear Information System (INIS)

Rakvin, B.; Maltar-Strmecki, N.; Nakagawa, K.

2007-01-01

Low-dose irradiation effects in L-alanine single crystals irradiated with γ-rays, Ne and Si ion beams have been investigated by means of a two-pulse electron spin echo (ESE) technique. An effective phase memory time, T M , was measured from the first stable L-alanine radical, SAR1, and its complex relaxation mechanism is discussed. Both spectral and instantaneous diffusion contributions to the total effective relaxation rate have been extrapolated through the detection of the two-pulse ESE signal as a function of turning angle. The local microscopic concentration of paramagnetic centers C(ions)/C(γ-ray) for low-dose heavy-ion irradiation has been deduced from the corresponding spin-spin interaction

Effects of low and high energy ion bombardment on ETFE polymer

Science.gov (United States)

Minamisawa, R. A.; De Almeida, A.; Abidzina, V.; Parada, M. A.; Muntele, I.; Ila, D.

2007-04-01

The polymer ethylenetetrafluoroethylene (ETFE) is used as anti-adherent coatings for food packages and radiation dosimeters. In this work, we compare the damage induced in ETFE bombarded with 100 keV Si ions with that induced by 1 MeV proton bombardment. The damage depends on the type, energy and intensity of the irradiation. Irradiated films were analyzed with optical absorption photospectrometry, Raman spectroscopy and Fourier transform infrared (FTIR) spectroscopy to determine the chemical nature of the structural changes caused by ion irradiation. Computer simulations were performed to evaluate the radiation damage.

Low energy ion-molecule reactions

Energy Technology Data Exchange (ETDEWEB)

Farrar, J.M. [Univ. of Rochester, NY (United States)

1993-12-01

This project is concerned with elucidating the dynamics of elementary ion-molecule reactions at collision energies near and below 1 eV. From measurements of the angular and energy distributions of the reaction products, one can infer intimathe details about the nature of collisions leading to chemical reaction, the geometries and lifetimes of intermediate complexes that govern the reaction dynamics, and the collision energy dependence of these dynamical features. The author employs crossed-beam low energy mass spectrometry technology developed over the last several years, with the focus of current research on proton transfer and hydrogen atom transfer reactions of te O{sup {minus}} ion with species such as HF, H{sub 2}O, and NH{sub 3}.

The present state and perspectives of low-energy heavy ion biology

International Nuclear Information System (INIS)

Yuan Chengling; Yu Zengliang

2004-01-01

The interaction between low-energy ions and matter has been concerned rarely comparing to that of high-energy ions. It is even more unusual to find studies of the interaction of low-energy ions and complicated organisms. However, the discovery of bioeffects induced by ion beam implantation has opened a new branch in the field of ion beam applications in the life science--Low-energy Heavy Ion Biology. The mutagenic effect of low energy heavy ions was firstly reported in 1986 in rice. Since then, a damage mechanism involved in energy absorption, mass deposition, and charge exchange has been proposed. Accumulating evidence has indicated that these three factors are key determinants in the bioeffects induced by low energy heavy ions, which has opened new opportunities for mutational breeding, gene transferring, cell modification, and cell fusion. In recent years, the ion beam implantation technique has been widely applied in many fields, and increasing research interest in the field has been seen. The authors summarize recent advances in research on the role of low-energy ions in terms of the mechanisms and applications

Structural and optical modification in 4H-SiC following 30 keV silver ion irradiation

Science.gov (United States)

Kaushik, Priya Darshni; Aziz, Anver; Siddiqui, Azher M.; Lakshmi, G. B. V. S.; Syväjärvi, Mikael; Yakimova, Rositsa; Yazdi, G. Reza

2018-05-01

The market of high power, high frequency and high temperature based electronic devices is captured by SiC due to its superior properties like high thermal conductivity and high sublimation temperature and also due to the limitation of silicon based electronics in this area. There is a need to investigate effect of ion irradiation on SiC due to its application in outer space as outer space is surrounded both by low and high energy ion irradiations. In this work, effect of low energy ion irradiation on structural and optical property of 4H-SiC is investigated. ATR-FTIR is used to study structural modification and UV-Visible spectroscopy is used to study optical modifications in 4H-SiC following 30 keV Ag ion irradiation. FTIR showed decrease in bond density of SiC along the ion path (track) due to the creation of point defects. UV-Visible absorption spectra showed decrease in optical band gap from 3.26 eV to 2.9 eV. The study showed degradation of SiC crystallity and change in optical band gap following low energy ion irradiation and should be addressed while fabricationg devices based on SiC for outer space application. Additionally, this study provides a platform for introducing structural and optical modification in 4H-SiC using ion beam technology in a controlled manner.

An electron cyclotron resonance ion source based low energy ion beam platform

International Nuclear Information System (INIS)

Sun, L. T.; Shang, Y.; Ma, B. H.; Zhang, X. Z.; Feng, Y. C.; Li, X. X.; Wang, H.; Guo, X. H.; Song, M. T.; Zhao, H. Y.; Zhang, Z. M.; Zhao, H. W.; Xie, D. Z.

2008-01-01

To satisfy the requirements of surface and atomic physics study in the field of low energy multiple charge state ion incident experiments, a low energy (10 eV/q-20 keV/q) ion beam platform is under design at IMP. A simple test bench has been set up to test the ion beam deceleration systems. Considering virtues such as structure simplicity, easy handling, compactness, cost saving, etc., an all-permanent magnet ECRIS LAPECR1 [Lanzhou all-permanent magnet electron cyclotron resonance (ECR) ion source No. 1] working at 14.5 GHz has been adopted to produce intense medium and low charge state ion beams. LAPECR1 source has already been ignited. Some intense low charge state ion beams have been produced on it, but the first test also reveals that many problems are existing on the ion beam transmission line. The ion beam transmission mismatches result in the depressed performance of LAPECR1, which will be discussed in this paper. To obtain ultralow energy ion beam, after being analyzed by a double-focusing analyzer magnet, the selected ion beam will be further decelerated by two afocal deceleration lens systems, which is still under design. This design has taken into consideration both ions slowing down and also ion beam focusing. In this paper, the conceptual design of deceleration system will be discussed

An electron cyclotron resonance ion source based low energy ion beam platform.

Science.gov (United States)

Sun, L T; Shang, Y; Ma, B H; Zhang, X Z; Feng, Y C; Li, X X; Wang, H; Guo, X H; Song, M T; Zhao, H Y; Zhang, Z M; Zhao, H W; Xie, D Z

2008-02-01

To satisfy the requirements of surface and atomic physics study in the field of low energy multiple charge state ion incident experiments, a low energy (10 eV/q-20 keV/q) ion beam platform is under design at IMP. A simple test bench has been set up to test the ion beam deceleration systems. Considering virtues such as structure simplicity, easy handling, compactness, cost saving, etc., an all-permanent magnet ECRIS LAPECR1 [Lanzhou all-permanent magnet electron cyclotron resonance (ECR) ion source No. 1] working at 14.5 GHz has been adopted to produce intense medium and low charge state ion beams. LAPECR1 source has already been ignited. Some intense low charge state ion beams have been produced on it, but the first test also reveals that many problems are existing on the ion beam transmission line. The ion beam transmission mismatches result in the depressed performance of LAPECR1, which will be discussed in this paper. To obtain ultralow energy ion beam, after being analyzed by a double-focusing analyzer magnet, the selected ion beam will be further decelerated by two afocal deceleration lens systems, which is still under design. This design has taken into consideration both ions slowing down and also ion beam focusing. In this paper, the conceptual design of deceleration system will be discussed.

Very low-energy and low-fluence ion beam bombardment of naked plasmid DNA

International Nuclear Information System (INIS)

Norarat, R.; Semsang, N.; Anuntalabhochai, S.; Yu, L.D.

2009-01-01

Ion beam bombardment of biological organisms has been recently applied to mutation breeding of both agricultural and horticultural plants. In order to explore relevant mechanisms, this study employed low-energy ion beams to bombard naked plasmid DNA. The study aimed at simulation of the final stage of the process of the ion beam bombardment of real cells to check whether and how very low-energy and low-fluence of ions can induce mutation. Argon and nitrogen ions at 5 keV and 2.5 keV respectively bombarded naked plasmid DNA pGFP to very low-fluences, an order of 10 13 ions/cm 2 . Subsequently, DNA states were analyzed using electrophoresis. Results provided evidences that the very low-energy and low-fluence ion bombardment indeed altered the DNA structure from supercoil to short linear fragments through multiple double strand breaks and thus induced mutation, which was confirmed by transfer of the bombarded DNA into bacteria Escherichia coli and subsequent expression of the marker gene.

Distribution of products in polymer materials induced by ion-beam irradiation

Energy Technology Data Exchange (ETDEWEB)

Sugimoto, Masaki; Kudoh, Hisaaki; Sasuga, Tsuneo; Seguchi, Tadao [Japan Atomic Energy Research Inst., Tokyo (Japan); Hama, Yoshimasa; Hamanaka, Ken-ichi; Matsumoto, Hideya

1997-03-01

The depth profile of double bond formed in low density polyethylene (LDPE) sheet by ion beams irradiation was observed by a micro FT-IR spectrometer in order to investigate the linear energy transfer (LET) dependency on radiation effects to polymer materials. The distribution of double bond formation in LDPE by irradiation of light ions as H+ was found to be same with the dose distribution calculated from TRIM code, and the yield was also same with that by gamma-rays irradiation, which means that the LET dependency is very small. However, the distribution of double bond to depth was much different from the calculated depth-dose in heavy ions irradiation as Ar and Kr. Then, the dose evaluation was difficult from the TRIM code calculation for heavy ions. (author)

Hardening of ODS ferritic steels under irradiation with high-energy heavy ions

Science.gov (United States)

Ding, Z. N.; Zhang, C. H.; Yang, Y. T.; Song, Y.; Kimura, A.; Jang, J.

2017-09-01

Influence of the nanoscale oxide particles on mechanical properties and irradiation resistance of oxide-dispersion-strengthened (ODS) ferritic steels is of critical importance for the use of the material in fuel cladding or blanket components in advanced nuclear reactors. In the present work, impact of structures of oxide dispersoids on the irradiation hardening of ODS ferritic steels was studied. Specimens of three high-Cr ODS ferritic steels containing oxide dispersoids with different number density and average size were irradiated with high-energy Ni ions at about -50 °C. The energy of the incident Ni ions was varied from 12.73 MeV to 357.86 MeV by using an energy degrader at the terminal so that a plateau of atomic displacement damage (∼0.8 dpa) was produced from the near surface to a depth of 24 μm in the specimens. A nanoindentor (in constant stiffness mode with a diamond Berkovich indenter) and a Vickers micro-hardness tester were used to measure the hardeness of the specimens. The Nix-Gao model taking account of the indentation size effect (ISE) was used to fit the hardness data. It is observed that the soft substrate effect (SSE) can be diminished substantially in the irradiated specimens due to the thick damaged regions produced by the Ni ions. A linear correlation between the nano-hardeness and the micro-hardness was found. It is observed that a higher number density of oxide dispersoids with a smaller average diameter corresponds to an increased resistance to irradiation hardening, which can be ascribed to the increased sink strength of oxides/matrix interfaces to point defects. The rate equation approach and the conventional hardening model were used to analyze the influence of defect clusters on irradiation hardening in ODS ferritic steels. The numerical estimates show that the hardening caused by the interstitial type dislocation loops follows a similar trend with the experiment data.

Defect diffusion during annealing of low-energy ion-implanted silicon

International Nuclear Information System (INIS)

Bedrossian, P.J.; Caturla, M.J.; Diaz de la Rubia, T.

1997-01-01

The authors present a new approach for investigating the kinetics of defect migration during annealing of low-energy, ion-implanted silicon, employing a combination of computer simulations and atomic-resolution tunneling microscopy. Using atomically-clean Si(111)-7 x 7 as a sink for bulk point defects created by 5 keV Xe and Ar irradiation, they observe distinct, temperature-dependent surface arrival rates for vacancies and interstitials. A combination of simulation tools provides a detailed description of the processes that underlie the observed temperature-dependence of defect segregation, and the predictions of the simulations agree closely with the experimental observations

Nuclear structure studies with low-energy light ions: fundamental and applied

International Nuclear Information System (INIS)

Mazumdar, I.

2016-01-01

Studies in low and medium energy nuclear physics have been dominated by heavy-ion induced reactions for last five decades. Heavy-ion induced nuclear reactions have enriched our knowledge of the structural evolutions and intricacies of reaction dynamics of the nuclear many-body systems. However, the emergence and rise of heavy-ion physics have seen a general decline in studies with low- and medium-energy light-ion beams. The harsh reality of dwindling number of low-energy light ion facilities adversely affect research in nuclear physics. Very low-energy and high current light-ion facilities immediately conjures up in our minds the studies in nuclear astrophysics. Measurements of light-ion capture cross sections and astrophysical S factors are the major themes of research at most of the light-ion facilities. However, the importance low energy light-ion beams is multifarious. A variety of measurements providing vital support and inputs to heavy-ion research can only be carried out at the low-energy, light-ion facilities. Light-ion beams are also useful for generation of mono-energetic neutron beams. In this talk I will draw from some of our recent measurements to show the importance of light-ion beams in nuclear astrophysics and also in applied nuclear physics. (author)

Ion-irradiated polymer studied by a slow positron beam

International Nuclear Information System (INIS)

Kobayashi, Yoshinori; Kojima, Isao; Hishita, Shunichi; Suzuki, Takenori.

1995-01-01

Poly (aryl-ether-ether ketone) (PEEK) films were irradiated with 1MeV and 2MeV 0 + ions and the positron annihilation Doppler broadening was measured as a function of the positron energy. The annihilation lines recorded at relatively low positron energies were found to become broader with increasing the irradiation dose, suggesting that positronium (Ps) formation may be inhibited in the damaged regions. A correlation was observed between the Doppler broadening and spin densities determined by electron spin resonance (ESR). (author)

Dose controlled low energy electron irradiator for biomolecular films.

Science.gov (United States)

Kumar, S V K; Tare, Satej T; Upalekar, Yogesh V; Tsering, Thupten

2016-03-01

We have developed a multi target, Low Energy Electron (LEE), precise dose controlled irradiator for biomolecular films. Up to seven samples can be irradiated one after another at any preset electron energy and dose under UHV conditions without venting the chamber. In addition, one more sample goes through all the steps except irradiation, which can be used as control for comparison with the irradiated samples. All the samples are protected against stray electron irradiation by biasing them at -20 V during the entire period, except during irradiation. Ethernet based communication electronics hardware, LEE beam control electronics and computer interface were developed in house. The user Graphical User Interface to control the irradiation and dose measurement was developed using National Instruments Lab Windows CVI. The working and reliability of the dose controlled irradiator has been fully tested over the electron energy range of 0.5 to 500 eV by studying LEE induced single strand breaks to ΦX174 RF1 dsDNA.

Dose controlled low energy electron irradiator for biomolecular films

Energy Technology Data Exchange (ETDEWEB)

Kumar, S. V. K., E-mail: svkk@tifr.res.in; Tare, Satej T.; Upalekar, Yogesh V.; Tsering, Thupten [Tata Institute of Fundamental Research, Homi Bhabha Road, Colaba, Mumbai 400 005 (India)

2016-03-15

We have developed a multi target, Low Energy Electron (LEE), precise dose controlled irradiator for biomolecular films. Up to seven samples can be irradiated one after another at any preset electron energy and dose under UHV conditions without venting the chamber. In addition, one more sample goes through all the steps except irradiation, which can be used as control for comparison with the irradiated samples. All the samples are protected against stray electron irradiation by biasing them at −20 V during the entire period, except during irradiation. Ethernet based communication electronics hardware, LEE beam control electronics and computer interface were developed in house. The user Graphical User Interface to control the irradiation and dose measurement was developed using National Instruments Lab Windows CVI. The working and reliability of the dose controlled irradiator has been fully tested over the electron energy range of 0.5 to 500 eV by studying LEE induced single strand breaks to ΦX174 RF1 dsDNA.

Low energy ion scattering as a tool for surface structure and composition analysis

International Nuclear Information System (INIS)

Armour, D.G.

1980-01-01

Low energy ion scattering is finding increasing application in the study of areas such as gas adsorption, thin film deposition and surface damage creation and annealing during ion irradiation where structural and compositional changes occurring in only the outermost atomic layer need to be monitored. The capabilities of the technique and the ways in which it has been developed for different types of analysis depend strongly on the fundamental atomic collision processes taking place at the surface and it is these processes, together with examples of their role in analysis applications, that form the subject of this paper. (author)

High dose radiation damage in nuclear energy structural materials investigated by heavy ion irradiation simulation

International Nuclear Information System (INIS)

Zheng Yongnan; Xu Yongjun; Yuan Daqing

2014-01-01

Structural materials in ITER, ADS and fast reactor suffer high dose irradiations of neutrons and/or protons, that leads to severe displacement damage up to lOO dpa per year. Investigation of radiation damage induced by such a high dose irradiation has attracted great attention along with the development of nuclear energy facilities of new generation. However, it is deeply hampered for the lacking of high dose neutron and proton sources. Irradiation simulation of heavy ions produced by accelerators opens up an effective way for laboratory investigation of high dose irradiation induced radiation damage encountered in the ITER, ADS, etc. Radiation damage is caused mainly by atomic displacement in materials. The displacement rate of heavy ions is about lO 3 ∼10 7 orders higher than those of neutrons and protons. High displacement rate of heavy ions significantly reduces the irradiation time. The heavy ion irradiation simulation technique (HIIS) technique has been developed at China Institute of Atomic Energy and a series of the HIIS experiments have been performed to investigate radiation damage in stainless steels, tungsten and tantalum at irradiation temperatures from room temperature to 800 ℃ and in the irradiation dose region up to 100 dpa. The experimental results show that he radiation swelling peak for the modified stainless steel appears in the temperature region around 580 ℃ and the radiation damage is more sensitive to the temperature, the size of the radiation induced vacancy cluster or void increase with the increasing of the irradiation dose, and among the three materials the home-made modified stainless steel has the best radiation resistant property. (authors)

Irradiation effects on secondary structure of protein induced by keV ions

International Nuclear Information System (INIS)

Cui, F.Z.; Lin, Y.B.; Zhang, D.M.; Tian, M.B.

2001-01-01

Protein secondary structure changes by low-energy ion irradiation are reported for the first time. The selected system is 30 keV N + irradiation on bovine serum albumin (BSA). After irradiation at increasing fluences from 1.0x10 15 to 2.5x10 16 ion/cm 2 , Fourier transform infrared spectra analysis was conducted. It was found that the secondary structures of BSA molecules were very sensitive to ion irradiation. Secondary conformations showed different trends of change during irradiation. With the increase of ion fluence from 0 to 2.5x10 16 ion/cm 2 , the fraction of α-helix and β-turns decreased from 17 to 12%, and from 40 to 31%, respectively, while that of random coil and β-sheet structure increased from 18 to 27%, and from 25 to 30%, respectively. Possible explanations for the secondary conformational changes of protein are proposed. (author)

Mechanism of long-range penetration of low-energy ions in botanic samples

International Nuclear Information System (INIS)

Liu Feng; Wang Yugang; Xue Jianming; Wang Sixue; Du Guanghua; Yan Sha; Zhao Weijiang

2002-01-01

The authors present experimental evidence to reveal the mechanism of long-range penetration of low-energy ions in botanic samples. In the 100 keV Ar + ion transmission measurement, the result confirmed that low-energy ions could penetrate at least 60 μm thick kidney bean slices with the probability of about 1.0 x 10 -5 . The energy spectrum of 1 MeV He + ions penetrating botanic samples has shown that there is a peak of the count of ions with little energy loss. The probability of the low-energy ions penetrating the botanic sample is almost the same as that of the high-energy ions penetrating the same samples with little energy loss. The results indicate that there are some micro-regions with mass thickness less than the projectile range of low-energy ions in the botanic samples and they result in the long-range penetration of low-energy ions in botanic samples

Tailoring magnetism by light-ion irradiation

International Nuclear Information System (INIS)

Fassbender, J; Ravelosona, D; Samson, Y

2004-01-01

Owing to their reduced dimensions, the magnetic properties of ultrathin magnetic films and multilayers, e.g. magnetic anisotropies and exchange coupling, often depend strongly on the surface and interface structure. In addition, chemical composition, crystallinity, grain sizes and their distribution govern the magnetic behaviour. All these structural properties can be modified by light-ion irradiation in an energy range of 5-150 keV due to the energy loss of the ions in the solid along their trajectory. Consequently the magnetic properties can be tailored by ion irradiation. Similar effects can also be observed using Ga + ion irradiation, which is the common ion source in focused ion beam lithography. Examples of ion-induced modifications of magnetic anisotropies and exchange coupling are presented. This review is limited to radiation-induced structural changes giving rise to a modification of magnetic parameters. Ion implantation is discussed only in special cases. Due to the local nature of the interaction, magnetic patterning without affecting the surface topography becomes feasible, which may be of interest in applications. The main patterning technique is homogeneous ion irradiation through masks. Focused ion beam and ion projection lithography are usually only relevant for larger ion masses. The creation of magnetic feature sizes below 50 nm is shown. In contrast to topographic nanostructures the surrounding area of these nanostructures can be left ferromagnetic, leading to new phenomena at their mutual interface. Most of the material systems discussed here are important for technological applications. The main areas are magnetic data storage applications, such as hard magnetic media with a large perpendicular magnetic anisotropy or patterned media with an improved signal to noise ratio and magnetic sensor elements. It will be shown that light-ion irradiation has many advantages in the design of new material properties and in the fabrication technology of

Radiation stability of nanocrystalline ZrN coatings irradiated with high energy Xe and Bi ions

International Nuclear Information System (INIS)

Skuratov, V.A.; Sokhatsky, A.S.; Uglov, V.V.; Zlotski, S.V.; Van Vuuren, A.J.; Neethling, Jan; O'Connell, J.

2011-01-01

Swift Xe and Bi ion irradiation effects in nanocrystalline ZrN coatings as a function of ion fluence are reported. Zirconium nitride films of different thickness (0.1, 3, 10 and 20 micrometers) synthesized by vacuum arc-vapour deposition in nanocrystalline state (average size of crystallites is ∼4 nm) were irradiated with 167 MeV Xe and 695 MeV Bi ions to fluences in the range 3x10 12 ÷2.6x10 15 cm -2 (Xe) and 10 12 x10 13 cm -2 (Bi) and studied using XRD and TEM techniques. No evidence of amorphization due to high level ionizing energy losses has been found. The measurements of lattice parameter have revealed nonmonotonic dependence of the stress level in irradiated samples on ion fluence. (authors)

EPR and cathodoluminescence of defects in diamond irradiated by nickel ions with energy of 335 MeV

International Nuclear Information System (INIS)

Varichenko, V.S.; Martinovich, V.A.; Filipp, A.Z.; Didyk, A.Yu.

1995-01-01

Defect production in natural diamond irradiated by 335 MeV Ni ions within a dose range of 5·10 12 - 5·10 14 cm -2 has been studied by EPR and cathodoluminescence techniques. It is shown that the high energy ion irradiation leads to the appearance of modified track like one-dimensional structures with nontetrahedral coordination of atoms. A mechanism of microwave conductivity in modified structures of irradiated samples discussed in frame of a model of mobile quasi-particles of corresponding paramagnetic centres. Peculiarities of concentration distributions of paramagnetic centres corresponding to ion-modified structures and cathodoluminescence centres through the irradiated layer are connected with track channeling and stopped of a part of ions because of their elastic collisions with lattice atoms during ion stopping. (author). 18 refs., 5 figs

Investigations of electrical and optical properties of low energy ion irradiated α-Fe{sub 2}O{sub 3} (hematite) thin films

Energy Technology Data Exchange (ETDEWEB)

Sulania, Indra; Kanjilal, D. [Inter University Accelerator Centre, P O Box-10502, Aruna Asaf Ali Marg, New Delhi-110067 (India); Kaswan, Jyoti; Attatappa, Vinesh [Department of physics, Amity University, Manesar-122 413, Haryana (India); Karn, Ranjeet Kumar [Jamshedpur Cooperative College, Circuit House Area, Jamshedpur-831001, Jharkhand (India); Agarwal, D. C. [Sant Longowal Institute of Engineering and Technology, Sangrur, Longowal-148106, Punjab (India)

2016-05-23

Thin films of α-Fe{sub 2}O{sub 3} of thickness ~100 nm were synthesized on Si (100) and glass substrates by thermal evaporation method. The as deposited films were annealed at 400°C in Oxygen environment for 2 hours to obtain the desired phase. The annealed films found to be polycrystalline in nature with an average crystallite size ~7 nm. The direct and indirect band gaps were found to be 2.2 and 1.5 eV respectively for annealed films using. I-V characteristics and Hall-effect measurement of annealed films showed n-type semi conducting behavior. Further, films were irradiated with nitrogen ions of energy 10 keV at an ion fluence of 1×10{sup 18} ions/cm{sup 2}. After irradiation, a decrease in both direct as well as indirect band gap was observed, from 2.2 to 2.1 eV and 1.5 to 1.3 eV respectively. I-V characteristic and Hall-Effect measurement confirmed change in conductivity of the films from n-type to p-type after irradiation, which can have possible applications in semi conducting device fabrications.

Development of nano-structure controlled polymer electrolyte fuel-cell membranes by high-energy heavy ion irradiation

International Nuclear Information System (INIS)

Yamaki, Tetsuya; Asano, Masaharu; Maekawa, Yasunari; Yoshida, Masaru; Kobayashi, Misaki; Nomura, Kumiko; Takagi, Shigeharu

2008-01-01

There is increasing interest in polymer electrolyte fuel cells (PEFCs) together with recent worldwide energy demand and environmental issues. In order to develop proton-conductive membranes for PEFCs, we have been using high-energy heavy ion beams from the cyclotron accelerator of Takasaki Ion Accelerators for Advanced Radiation Application (TIARA), JAEA. Our strategic focus is centered on using nano-scale controllability of the ion-beam processing; the membrane preparation involves (1) the irradiation of commercially-available base polymer films with MeV ions, (2) graft polymerization of vinyl monomers into electronically-excited parts along the ion trajectory, called latent tracks, and (3) sulfonation of the graft polymers. Interestingly, the resulting membranes exhibited anisotropic proton transport, i.e., higher conductivity in the thickness direction. According to microscopic observations, this is probably because the columnar electrolyte phase extended, with a width of tens-to-hundreds nanometers, through the membrane. Other excellent membrane properties, e.g., sufficient mechanical strength, high dimensional stability, and low gas permeability should be due to such a controlled structure. (author)

Glass-like, low-energy excitations in neutron-irradiated quartz

International Nuclear Information System (INIS)

Gardner, J.W.

1980-01-01

The specific heat and thermal conductivity of neutron-irradiated crystalline quartz have been measured for temperatures approx. = 0.1 to 5 K. Four types of low-energy excitations are observed in the irradiated samples, two of which can be removed selectively by heat treatment. One set of remaining excitations gives rise to low-temperature thermal behavior characteristic of glassy (amorphous) solids. The density of these glass-like excitations can be 50% the density observed in vitreous silica, yet the sample still retains long-range atomic order. In a less-irradiated sample, glass-like excitations may be present with a density only approx. = 2.5% that observed in vitreous silica and possess a similar broad energy spectrum over 0.1 to 1 K

Scanning ion irradiation of polyimide films

Energy Technology Data Exchange (ETDEWEB)

Luecken, Stefan; Koval, Yuri; Mueller, Paul [Department of Physics and Interdisciplinary Center for Molecular Materials (ICMM), Universitaet Erlangen-Nuernberg (Germany)

2012-07-01

Recently we found, that the surface of nearly any polymer can be converted into conductive material by low energy ion irradiation. The graphitized layer consists of nanometer sized graphene and graphite flakes. In order to enhance the conductivity and to increase the size of the flakes we applied a novel method of scanning irradiation. We investigated the influence of various irradiation parameters on the conductivity of the graphitized layer. We show, that the conductance vs. temperature can be described in terms of weak Anderson localization. At approximately 70 K, a crossover occurs from 2-dimensional to 3-dimensional behavior. This can be explained by a decrease of the Thouless length with increasing temperature. The crossover temperature can be used to estimate the thickness of the graphitized layer.

Smoothing an isolated interface of cobalt-copper under irradiation by low-energy argon ions

International Nuclear Information System (INIS)

Stognij, A.I.; Novitskij, N.N.; Stukalov, O.M.

2003-01-01

Multilayer film structures, i.e. gold layer-copper-cobalt, are considered. It is shown that the structure, where cobalt surface prior to copper layer deposition was subjected to additional irradiation by a flow of argon ions, features the smoothest surface. The conclusion is made about smoothing out of cobalt-copper interface as a result of multiple collisions of argon slow ions and cobalt atoms during braking within two or three upper atomic rows of the cobalt layer [ru

Low energy ion beam dynamics of NANOGAN ECR ion source

Energy Technology Data Exchange (ETDEWEB)

Kumar, Sarvesh, E-mail: sarvesh@iuac.res.in; Mandal, A.

2016-04-01

A new low energy ion beam facility (LEIBF) has been developed for providing the mass analyzed highly charged intense ion beams of energy ranging from a few tens of keV to a few MeV for atomic, molecular and materials sciences research. The new facility consists of an all permanent magnet 10 GHz electron cyclotron resonance (ECR) ion source (NANOGAN) installed on a high voltage platform (400 kV) which provides large currents of multiply charged ion beams. Higher emittance at low energy of intense ion beam puts a tremendous challenge to the beam optical design of this facility. The beam line consists of mainly the electrostatic quadrupoles, an accelerating section, analyzing cum switching magnet and suitable beam diagnostics including vacuum components. The accelerated ion beam is analyzed for a particular mass to charge (m/q) ratio as well as guided to three different lines along 75°, 90° and 105° using a large acceptance analyzing cum switching magnet. The details of transverse beam optics to all the beam lines with TRANSPORT and GICOSY beam optics codes are being described. Field computation code, OPERA 3D has been utilized to design the magnets and electrostatic quadrupoles. A theoretical estimation of emittance for optimized geometry of ion source is given so as to form the basis of beam optics calculations. The method of quadrupole scan of the beam is used to characterize the emittance of the final beam on the target. The measured beam emittance increases with m/q ratios of various ion beams similar to the trend observed theoretically.

Ion beam irradiation effects on aromatic polymers

International Nuclear Information System (INIS)

Shukushima, Satoshi; Ueno, Keiji

1995-01-01

We studied the optical and thermal properties of aromatic polymer films which had been irradiated with 1 MeV H + , H 2 + and He + ions. The examined aromatic polymers were polyetherether ketone(PEEK), polyetherimide(PEI), polyether sulfon(PES), polysulfon(PSF), and polyphenylene sulfide(PPS). The optical densities at 300nm of PES and PSF greatly increased after the irradiation. The optical densities at 400nm of all the examined polymer lineally increased with the irradiation dose. The PEEK film which had been irradiated with 1 MeV H + was not deformed above melting point. This demonstrates that cross-linking occurs in PEEK films by ion beam irradiation. As for the effects, depending on the mass of the irradiated ions, it was found that the ions with a high mass induced larger effects on the aromatic polymers for the same absorption energy. (author)

Strong out-of-plane magnetic anisotropy in ion irradiated anatase TiO2 thin films

Directory of Open Access Journals (Sweden)

M. Stiller

2016-12-01

Full Text Available The temperature and field dependence of the magnetization of epitaxial, undoped anatase TiO2 thin films on SrTiO3 substrates was investigated. Low-energy ion irradiation was used to modify the surface of the films within a few nanometers, yet with high enough energy to produce oxygen and titanium vacancies. The as-prepared thin film shows ferromagnetism which increases after irradiation with low-energy ions. An optimal and clear magnetic anisotropy was observed after the first irradiation, opposite to the expected form anisotropy. Taking into account the experimental parameters, titanium vacancies as di-Frenkel pairs appear to be responsible for the enhanced ferromagnetism and the strong anisotropy observed in our films. The magnetic impurities concentrations was measured by particle-induced X-ray emission with ppm resolution. They are ruled out as a source of the observed ferromagnetism before and after irradiation.

Influence of high energy ion irradiation on fullerene derivative (PCBM) thin films

Energy Technology Data Exchange (ETDEWEB)

Sharma, Trupti, E-mail: tsphy91@gmail.com [Department of Physics, Malaviya National Institute of Technology, Jaipur 302017 (India); Singhal, Rahul; Vishnoi, Ritu [Department of Physics, Malaviya National Institute of Technology, Jaipur 302017 (India); Lakshmi, G.B.V.S. [Inter University Accelerator Centre, Post Box No. 10502, New Delhi 110067 (India); Biswas, S.K. [Department of Metallurgical and Materials Engineering, Malaviya National Institute of Technology, Jaipur 302017 (India)

2017-04-01

Highlights: • Spin casted PCBM thin films (∼100 nm) are irradiated with 55 MeV Si{sup 4+} ion beam. • The decrease in band gap is observed after irradiation. • The surface properties is also dependent on incident ion fluences. • Polymerization reactions induced by energetic ions leads to modifications. - Abstract: The modifications produced by 55 MeV Si{sup 4+} swift heavy ion irradiation on the phenyl C{sub 61} butyric acid methyl ester (PCBM) thin films (thickness ∼ 100 nm) has been enlightened. The PCBM thin films were irradiated at 1 × 10{sup 10}, 1 × 10{sup 11} and 1 × 10{sup 12} ions/cm{sup 2} fluences. After ion irradiation, the decreased optical band gap and FTIR band intensities were observed. The Raman spectroscopy reveals the damage produced by energetic ions. The morphological variation were investigated by atomic force microscopy and contact angle measurements and observed to be influenced by incident ion fluences. After 10{sup 11} ions/cm{sup 2} fluence, the overlapping of ion tracks starts and produced overlapping effects.

Mono and sequential ion irradiation induced damage formation and damage recovery in oxide glasses: Stopping power dependence of the mechanical properties

International Nuclear Information System (INIS)

Mir, A.H.; Monnet, I.; Toulemonde, M.; Bouffard, S.; Jegou, C.; Peuget, S.

2016-01-01

Simple and complex borosilicate glasses were irradiated with single and double ion beams of light and heavy ions over a broad fluence and stopping power range. As a result of the heavy ion irradiation (U, Kr, Au), the hardness was observed to diminish and saturate after a decrease by 35 ± 1%. Unlike slow and swift heavy ion irradiation, irradiation with light ions (He,O) induced a saturation hardness decrease of 18 ± 1% only. During double ion beam irradiation; where glasses were first irradiated with a heavy ion (gold) and then by a light ion (helium), the light ion irradiation induced partial damage recovery. As a consequence of the recovery effect, the hardness of the pre-irradiated glasses increased by 10–15% depending on the chemical composition. These results highlight that the nuclear energy loss and high electronic energy loss (≥4 keV/nm) result in significant and similar modifications whereas light ions with low electronic energy loss (≤1 keV/nm) result in only mild damage formation in virgin glasses and recovery in highly pre-damaged glasses. These results are important to understand the damage formation and recovery in actinide bearing minerals and in glasses subjected to self-irradiation by alpha decays. - Highlights: • Behavior of glasses strongly depends on the electronic energy loss (Se) of the ions. • High Se (≥4 keV/nm) induces large changes in comparison to lower Se values. • Apart from mild damage formation, low Se causes recovery of pre-existing damage. • Alpha induced partial recovery of the damage would occur in nuclear waste glasses.

Anti-biofilm activity of Fe heavy ion irradiated polycarbonate

Energy Technology Data Exchange (ETDEWEB)

Joshi, R.P. [Department of Physics, Savitribai Phule Pune University, Pune 411007 (India); Hareesh, K., E-mail: appi.2907@gmail.com [Department of Physics, Savitribai Phule Pune University, Pune 411007 (India); Bankar, A. [Department of Microbiology, Waghire College, Pune 412301 (India); Sanjeev, Ganesh [Microtron Centre, Department of Studies in Physics, Mangalore University, Mangalore 574166 (India); Asokan, K.; Kanjilal, D. [Inter University Accelerator Centre, Arun Asaf Ali Marg, New Delhi 110067 (India); Dahiwale, S.S.; Bhoraskar, V.N. [Department of Physics, Savitribai Phule Pune University, Pune 411007 (India); Dhole, S.D., E-mail: sanjay@physics.unipune.ac.in [Department of Physics, Savitribai Phule Pune University, Pune 411007 (India)

2016-10-01

Highlights: • PC films were irradiated by 60 and 120 MeV Fe ions. • Irradiated PC films showed changes in its physical and chemical properties. • Irradiated PC also showed more anti-biofilm activity compared to pristine PC. - Abstract: Polycarbonate (PC) polymers were investigated before and after high energy heavy ion irradiation for anti-bacterial properties. These PC films were irradiated by Fe heavy ions with two energies, viz, 60 and 120 MeV, at different fluences in the range from 1 × 10{sup 11} ions/cm{sup 2} to 1 × 10{sup 13} ions/cm{sup 2}. UV-Visible spectroscopic results showed optical band gap decreased with increase in ion fluences due to chain scission mainly at carbonyl group of PC which is also corroborated by Fourier transform infrared spectroscopic results. X-ray diffractogram results showed decrease in crystallinity of PC after irradiation which leads to decrease in molecular weight. This is confirmed by rheological studies and also by differential scanning calorimetric results. The irradiated PC samples showed modification in their surfaces prevents biofilm formation of human pathogen, Salmonella typhi.

Enhancement of metal-nanoparticle precipitation by co-irradiation of high-energy heavy ions and laser in silica glass

International Nuclear Information System (INIS)

Okubo, N.; Umeda, N.; Takeda, Y.; Kishimoto, N.

2003-01-01

Simultaneous laser irradiation under ion irradiation is conducted to control nanoparticle precipitation in amorphous (a-)SiO 2 . Copper ions of 3 MeV and photons of 532 nm by Nd:YAG laser are irradiated to substrates of a-SiO 2 . The ion dose rate and total dose are set at 2-10 μA/cm 2 and 3.0 x 10 16 -3.0 x 10 17 ions/cm 2 , respectively, and the laser power density is 0.05-0.2 J/cm 2 pulse at 10 Hz. The laser is simultaneously irradiated with ions in the co-irradiation mode, and the result is compared to that in the sequential and ion-only irradiation. Cross-sectional TEM of the irradiated specimens is conducted after measuring optical absorption spectra. In the case of co-irradiation of intense laser power and high dose (0.2 J/cm 2 pulse and 3.0 x 10 17 ions/cm 2 ), Cu nanoparticles precipitate much more extensively than in the sequential irradiation, increasing both the particle diameter and the total Cu atoms in the nanoparticles. The optical absorption spectra show a surface plasmon peak of the nanoparticles. The precipitation enhancement in the co-irradiation mode suggests that the electronic energy is absorbed by the dynamic electronic states and promotes the Cu precipitation via enhancing the atomic migration

Structuring of silicon with low energy focused ion beams

Energy Technology Data Exchange (ETDEWEB)

Nebiker, P.W.; Doebeli, M. [Paul Scherrer Inst. (PSI), Villigen (Switzerland); Muehle, R. [Eidgenoessische Technische Hochschule, Zurich (Switzerland)

1997-09-01

The defect production in silicon induced by focused ion beam irradiation as a function of energy and projectile mass has been investigated and compared to the measured sputter yield. The aim was to find optimal beam parameters for the structuring of semiconductors with a minimum amount of defects produced per removed atom. (author) 2 figs., 2 refs.

High energy ions and energetic plasma irradiation effects on aluminum in a Filippov-type plasma focus

Energy Technology Data Exchange (ETDEWEB)

Roshan, M.V. [National Institute of Education, Nanyang Technological University, 1 Nanyang Walk, Singapore 637616 (Singapore)], E-mail: mroshan20@yahoo.com; Rawat, R.S. [National Institute of Education, Nanyang Technological University, 1 Nanyang Walk, Singapore 637616 (Singapore); Babazadeh, A.R.; Emami, M.; Sadat Kiai, S.M. [Plasma Physics Research Center, AEOI, 14155-1339 Tehran (Iran, Islamic Republic of); Verma, R.; Lin, J.J.; Talebitaher, A.R.; Lee, P.; Springham, S.V. [National Institute of Education, Nanyang Technological University, 1 Nanyang Walk, Singapore 637616 (Singapore)

2008-12-30

High energy ions and energetic plasma irradiation of aluminum cathode inserts have been accomplished in nitrogen and argon filled plasma focus device. The Filippov-type plasma focus facility, Dena, with 288 {mu}F capacitor bank and charging voltage of 25 kV (90 kJ maximum storage energy) was first optimized for strong ion beam generation for nitrogen and argon gases by maximizing hard X-ray emission efficiency. X-ray diffraction analysis as well as scanning electron microscopy along with energy dispersive X-ray spectroscopy carried out to study the structural, morphological and compositional profile of the treated samples. Change in preferred orientation, emergence of meta-stable phases, generation of copper micro-droplets, and production of cracks across the sample are demonstrated and discussed. The micro-hardness measurements in Vickers scale reveal that after ion irradiation, the surface hardness of samples is reduced.

Structuring of material parameters in lithium niobate crystals with low-mass, high-energy ion radiation

Science.gov (United States)

Peithmann, K.; Eversheim, P.-D.; Goetze, J.; Haaks, M.; Hattermann, H.; Haubrich, S.; Hinterberger, F.; Jentjens, L.; Mader, W.; Raeth, N. L.; Schmid, H.; Zamani-Meymian, M.-R.; Maier, K.

2011-10-01

Ferroelectric lithium niobate crystals offer a great potential for applications in modern optics. To provide powerful optical components, tailoring of key material parameters, especially of the refractive index n and the ferroelectric domain landscape, is required. Irradiation of lithium niobate crystals with accelerated ions causes strong structured modifications in the material. The effects induced by low-mass, high-energy ions (such as 3He with 41 MeV, which are not implanted, but transmit through the entire crystal volume) are reviewed. Irradiation yields large changes of the refractive index Δn, improved domain engineering capability within the material along the ion track, and waveguiding structures. The periodic modification of Δn as well as the formation of periodically poled lithium niobate (PPLN) (supported by radiation damage) is described. Two-step knock-on displacement processes, 3He→Nb and 3He→O causing thermal spikes, are identified as origin for the material modifications.

Genomic instability in mutation induction on normal human fibroblasts irradiated with chronic low-dose radiations in heavy-ion radiation field

International Nuclear Information System (INIS)

Suzuki, M.; Tsuruoka, C.; Uchihori, Y.; Yasuda, H.; Fujitaka, K.

2003-01-01

Full text: At a time when manned space exploration is more a reality with the planned the International Space Station (ISS) underway, the potential exposure of crews in a spacecraft to chronic low-dose radiations in the field of low-flux galactic cosmic rays (GCR) and the subsequent biological effects have become one of the major concerns of space science. We have studied both in vitro life span and genomic instability in cellular effects in normal human skin fibroblasts irradiated with chronic low-dose radiations in heavy-ion radiation field. Cells were cultured in a CO2 incubator, which was set in the irradiation room for the biological study of heavy ions in the Heavy Ion Medical Accelerator in Chiba (HIMAC) at National Institute of Radiological Sciences (NIRS), and irradiated with scattered radiations produced from heavy ions. Absorbed dose measured using a thermoluminescence dosimeter (TLD) and a Si-semiconductor detector was to be around 1.4 mGy per day when operating the HIMAC machine for biological experiments. The total population doubling number (tPDN) of low-dose irradiated cells was significantly smaller (79-93%) than that of unirradiated cells. The results indicate that the life span of the cell population shortens by irradiating with low-dose scattered radiations in the heavy-ion irradiation field. Genomic instability in cellular responses was examined to measure either cell killing or mutation induction in low-dose accumulated cells after exposing to X-ray challenging doses. The results showed that there was no enhanced effect on cell killing between low-dose accumulated and unirradiated cells after exposing to defined challenging doses of 200kV X rays. On the contrary, the mutation frequency on hprt locus of low-dose accumulated cells was much higher than that of unirradiated cells. The results suggested that genomic instability was induced in mutagenesis by the chronic low-dose irradiations in heavy-ion radiation field

Modification of WS2 nanosheets with controllable layers via oxygen ion irradiation

Science.gov (United States)

Song, Honglian; Yu, Xiaofei; Chen, Ming; Qiao, Mei; Wang, Tiejun; Zhang, Jing; Liu, Yong; Liu, Peng; Wang, Xuelin

2018-05-01

As one kind of two-dimensional materials, WS2 nanosheets have drawn much attention with different kinds of research methods. Yet ion irradiation method was barely used for WS2 nanosheets. In this paper, the structure, composition and optical band gap (Eg) of the multilayer WS2 films deposited by chemical vapor deposition (CVD) method on sapphire substrates before and after oxygen ion irradiation with different energy and fluences were studied. Precise tailored layer-structures and a controllable optical band gap of WS2 nanosheets were achieved after oxygen ion irradiation. The results shows higher energy oxygen irradiation changed the shape from triangular shaped grains to irregular rectangle shape but did not change 2H-WS2 phase structure. The intensity of E2g1 (Г) and A1g (Г) modes decreased and have small shifts after oxygen ion irradiation. The peak frequency difference between the E2g1 (Г) and A1g (Г) modes (Δω) decreased after oxygen ion irradiation, and this result indicates the number of layers decreased after oxygen ion irradiation. The Eg decreased with the increase of the energy and the fluence of oxygen ions. The number of layers, thickness and optical band gap changed after ion irradiation with different ion fluences and energies. The results proposed a new strategy for precise control of multilayer nanosheets and demonstrated the high applicability of ion irradiation in super-capacitors, field effect transistors and other applications.

Argon defect complexes in low energy Ar irradiated molybdenum

International Nuclear Information System (INIS)

Veen, A. van; Buters, W.T.M.; Kolk, G.J. van der; Caspers, L.M.; Armstrong, T.R.

1982-01-01

Thermal desorption spectrometry has been used to study the defects created in Mo irradiated along the direction with Ar ions ranging in energy from 0.1 to 2 keV. In addition to monitoring the release of the implanted Ar, additional information has been obtained by decoration of the defects with low energy helium and subsequent monitoring of the helium release. The studies show evidence that the Ar can be trapped in both substitutional sites and in a configuration in which the Ar is associated with vacancies (ArVsub(n), n >= 2). Most of the Ar implanted at high energy is released at approx. equal to 1500 K by thermal vacancy assisted diffusion. Argon trapped closer to the surface is released at lower temperatures via at least three different surface related release mechanisms. Additional results are presented on the interaction of self interstitial atoms (introduced by 100 eV Xe bombardment) with the Ar defects. Substitutional Ar is found to convert to interstitial Ar which seems to be mobile at room temperature. The Ar-vacancy complexes are found to be reduced to substitutional Ar. The results of atomistic calculations of the release mechanisms will also be presented. (orig.)

Temperature dependent surface modification of molybdenum due to low energy He+ ion irradiation

International Nuclear Information System (INIS)

Tripathi, J.K.; Novakowski, T.J.; Joseph, G.; Linke, J.; Hassanein, A.

2015-01-01

In this paper, we report on the temperature dependent surface modifications in molybdenum (Mo) samples due to 100 eV He + ion irradiation in extreme conditions as a potential candidate to plasma-facing components in fusion devices alternative to tungsten. The Mo samples were irradiated at normal incidence, using an ion fluence of 2.6 × 10 24 ions m −2 (with a flux of 7.2 × 10 20 ions m −2 s −1 ). Surface modifications have been studied using high-resolution field emission scanning electron-(SEM) and atomic force (AFM) microscopy. At 773 K target temperature homogeneous evolution of molybdenum nanograins on the entire Mo surface were observed. However, at 823 K target temperature appearance of nano-pores and pin-holes nearby the grain boundaries, and Mo fuzz in patches were observed. The fuzz density increases significantly with target temperatures and continued until 973 K. However, at target temperatures beyond 973 K, counterintuitively, a sequential reduction in the fuzz density has been seen till 1073 K temperatures. At 1173 K and above temperatures, only molybdenum nano structures were observed. Our temperature dependent studies confirm a clear temperature widow, 823–1073 K, for Mo fuzz formation. Ex-situ high resolution X-ray photoelectron spectroscopy studies on Mo fuzzy samples show the evidence of MoO 3 3d doublets. This elucidates that almost all the Mo fuzz were oxidized during open air exposure and are thick enough as well. Likewise the microscopy studies, the optical reflectivity measurements also show a sequential reduction in the reflectivity values (i.e., enhancement in the fuzz density) up to 973 K and after then a sequential enhancement in the reflectivity values (i.e., reduction in the fuzz density) with target temperatures. This is in well agreement with microscopy studies where we observed clear temperature window for Mo fuzz growth

Bioastrophysical Aspects of Low Energy Ion Irradiation of Frozen Anthracene Containing Water

International Nuclear Information System (INIS)

Tuleta, M.; Gabla, L.; Madej, J.

2001-01-01

The origin of life on Earth remains a fascinating mystery in spite of many theories existing on this subject. However, it seems that simple prebiotic molecules could play an essential role in the formation of more complex organisms. In our experiment, we synthesized a class of these molecules (quinones) bombarding frozen anthracene containing water with low energy hydrogen ions. This experiment roughly simulated the astrophysical conditions which one can find in the solar system. Thus, we can hypothesize that prebiotic molecules could be created by interaction of the solar wind with interplanetary dust grains. The delivery of these molecules to early Earth may have contributed to the generation of life on our planet

Low-energy ion beam extraction and transport: Experiment--computer comparison

International Nuclear Information System (INIS)

Spaedtke, P.; Brown, I.; Fojas, P.

1994-01-01

Ion beam formation at low energy (∼1 keV or so) is more difficult to accomplish than at high energy because of beam blowup by space-charge forces in the uncompensated region within the extractor, an effect which is yet more pronounced for heavy ions and for high beam current density. For the same reasons, the extracted ion beam is more strongly subject to space charge blowup than higher energy beams if it is not space-charge neutralized to a high degree. A version of vacuum arc ion source with an extractor that produces low-energy metal ion beams at relatively high current (∼0.5--10 kV at up to ∼100 mA) using a multi-aperture, accel--decel extractor configuration has been created. The experimentally observed beam extraction characteristics of this source is compared with those predicted using the AXCEL-INP code, and the implied downstream beam transport with theoretical expectations. It is concluded that the low-energy extractor performance is in reasonable agreement with the code, and that good downstream space charge neutralization is obtained. Here, the code and the experimental results are described, and the features that contribute to good low-energy performance are discussed

Atomic mixing of metallic bilayers Ni/Ti irradiated with high energy heavy ions; Etude du melange ionique de bicouches metalliques Ni/Ti irradiees avec des ions lourds de haute energie

Energy Technology Data Exchange (ETDEWEB)

Leguay, R

1994-09-26

We have studied the ionic mixing of Nl(105 angstrom) bilayers irradiated, at 80 and 300 K. with GeV heavy ions. In this energy range, the energy transfer from the incident ions to the target occurs mainly through electronic excitations. We have shown that this energy transfer induces a strong ionic mixing at the Nl/Ti interface. The thickness of the mixed interlayer increases with the fluence. At low fluences (10{sup 12} ions/cm{sup 2}), the Nl/Ti interface is rough ; at higher fluences (10{sup 13} ions/cm{sup 2}) a homogeneous mixed interlayer appears ; and at even higher fluences (some 10{sup 13} ions/cm{sup 2}) a preferential diffusion of Ni into Ti is clearly seen. The characterization techniques used are: (1) electrical resistivity measurements which allow to follow in situ the damage kinetic. (II) neutron and X-ray reflectometry. (III) elaboration of transverse cuts on which was performed energy loss spectroscopy. (II) and (III) allow the determination of the concentration profiles of the different species present in the sample. (IV) transmission electron microscopy on the transverse cuts which gives a direct image of the different layers. (author). 11 refs., 103 figs., 23 tabs., 2 appends.

Luminescence model with quantum impact parameter for low energy ions

CERN Document Server

Cruz-Galindo, H S; Martínez-Davalos, A; Belmont-Moreno, E; Galindo, S

2002-01-01

We have modified an analytical model of induced light production by energetic ions interacting in scintillating materials. The original model is based on the distribution of energy deposited by secondary electrons produced along the ion's track. The range of scattered electrons, and thus the energy distribution, depends on a classical impact parameter between the electron and the ion's track. The only adjustable parameter of the model is the quenching density rho sub q. The modification here presented, consists in proposing a quantum impact parameter that leads to a better fit of the model to the experimental data at low incident ion energies. The light output response of CsI(Tl) detectors to low energy ions (<3 MeV/A) is fitted with the modified model and comparison is made to the original model.

A study on irradiation damage of solid 5'-dTMP implanted by low energy N+ ion beam

International Nuclear Information System (INIS)

Shao Chunlin; Yu Zengliang

1995-01-01

The yields of inorganic phosphate and base released from 5'-dTMP irradiated by 30 keV N + ion beam were investigated. The fluence effects of these yields and the influence with 0.1 mol/L NaOH treatment on them were presented. It was shown that the alkali treatment would not only increase the yield of inorganic phosphate, but also damage and then split base released from the irradiated 5'-dTMP. When the irradiated samples were treated with 0.1 mol/L NaOH immediately, the yield of inorganic phosphate was increased by a factor of 1.7 and the concentration of base decreased to half of that in the sample's water solution. Furthermore, the yield of inorganic phosphate would increase by a factor of 2.8 after 40 min of alkali treatment. Irradiation effects of ion beam were mainly direct ones and had a higher value of G(P i ), greater than 0.44 molecule/100 eV

Measurement of ultra-low ion energy of decelerated ion beam using a deflecting electric field

Energy Technology Data Exchange (ETDEWEB)

Thopan, P.; Suwannakachorn, D.; Tippawan, U. [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Yu, L.D., E-mail: yuld@thep-center.org [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Thailand Center of Excellence in Physics, Commission on Higher Education, 328 Si Ayutthaya Road, Bangkok 10400 (Thailand)

2015-12-15

In investigation on ultra-low-energy ion bombardment effect on DNA, an ion beam deceleration lens was developed for high-quality ultra-low-energy ion beam. Measurement of the ion energy after deceleration was necessary to confirm the ion beam really decelerated as theoretically predicted. In contrast to conventional methods, this work used a simple deflecting electrostatic field after the deceleration lens to bend the ion beam. The beam bending distance depended on the ion energy and was described and simulated. A system for the measurement of the ion beam energy was constructed. It consisted of a pair of parallel electrode plates to generate the deflecting electrical field, a copper rod measurement piece to detect ion beam current, a vernier caliper to mark the beam position, a stepping motor to translate the measurement rod, and a webcam-camera to read the beam bending distance. The entire system was installed after the ion-beam deceleration lens inside the large chamber of the bioengineering vertical ion beam line. Moving the measurement rod across the decelerated ion beam enabled to obtain beam profiles, from which the beam bending distance could be known and the ion beam energy could be calculated. The measurement results were in good agreement with theoretical and simulated results.

STRUCTURAL, OPTICAL AND ELECTRICAL PROPERTIES OF PET POLYMER FILMS MODIFIED BY LOW ENERGY Ar+ ION BEAMS

Science.gov (United States)

Fawzy, Y. H. A.; Abdel-Hamid, H. M.; El-Okr, M. M.; Atta, A.

Polyethylene terephthalate (PET) films with thickness 40μm are irradiated with 3keV argon ion beams with different fluence ranging from 0.5×1018ions.cm-2 to 2×1018ions.cm-2 using locally designed broad ion source. The changes in the PET structure are characterized using X-ray diffraction (XRD), Fourier transform infrared (FTIR) and scanning electron microscope (SEM) techniques. The XRD patterns show that the peak intensity decreases with irradiation and the particle size decreases from 65.75 Å for the un-irradiated to 52.80 Å after irradiation. The FTIR indicates partial decrease and reduction in the intensity of the bands due to the degradation of the polymer after ion irradiation. The optical energy band gap decreases from 3.14eV to 3.05eV and the number of carbon cluster increases from 119 to 126 after ion irradiation. The results show a slight increase in the electrical conductivities and the dielectric constant (ɛ). The results indicate the effectiveness of using PET films as capacitors and resistors in industrial applications.

Heavy ion reactions at low energies

International Nuclear Information System (INIS)

Nemes, M.C.

1985-01-01

Some general features of the heavy ion reactions at low energies are presented. Some kinds of processes are studied, such as: elastic scattering, peripherical reactions, deep inelastic collisions and fusion. Both, theoretical and experimental perspectives on this field are discussed. (L.C.) [pt

Heavy ion irradiation of astrophysical ice analogs

International Nuclear Information System (INIS)

Duarte, Eduardo Seperuelo; Domaracka, Alicja; Boduch, Philippe; Rothard, Hermann; Balanzat, Emmanuel; Dartois, Emmanuel; Pilling, Sergio; Farenzena, Lucio; Frota da Silveira, Enio

2009-01-01

Icy grain mantles consist of small molecules containing hydrogen, carbon, oxygen and nitrogen atoms (e.g. H 2 O, GO, CO 2 , NH 3 ). Such ices, present in different astrophysical environments (giant planets satellites, comets, dense clouds, and protoplanetary disks), are subjected to irradiation of different energetic particles: UV radiation, ion bombardment (solar and stellar wind as well as galactic cosmic rays), and secondary electrons due to cosmic ray ionization of H 2 . The interaction of these particles with astrophysical ice analogs has been the object of research over the last decades. However, there is a lack of information on the effects induced by the heavy ion component of cosmic rays in the electronic energy loss regime. The aim of the present work is to simulate of the astrophysical environment where ice mantles are exposed to the heavy ion cosmic ray irradiation. Sample ice films at 13 K were irradiated by nickel ions with energies in the 1-10 MeV/u range and analyzed by means of FTIR spectrometry. Nickel ions were used because their energy deposition is similar to that deposited by iron ions, which are particularly abundant cosmic rays amongst the heaviest ones. In this work the effects caused by nickel ions on condensed gases are studied (destruction and production of molecules as well as associated cross sections, sputtering yields) and compared with respective values for light ions and UV photons. (authors)

Enhancement of CNT-based filters efficiency by ion beam irradiation

Science.gov (United States)

Elsehly, Emad M.; Chechenin, N. G.; Makunin, A. V.; Shemukhin, A. A.; Motaweh, H. A.

2018-05-01

It is shown in the report that disorder produced by ion beam irradiation can enhance the functionality of the carbon nanotubes. The filters of pressed multiwalled carbon nanotubes (MWNTs) were irradiated by He+ ions of the energy E = 80 keV with the fluence 2 × 1016 ion/cm2. The removal of manganese from aqueous solutions by using pristine and ion beam irradiated MWNTs filters was studied as a function of pH, initial concentration of manganese in aqueous solution, MWNT mass and contact time. The filters before and after filtration were characterized by Raman (RS) and energy dispersive X-ray spectroscopy (EDS) techniques to investigate the deposition content in the filter and defect formation in the MWNTs. The irradiated samples showed an enhancement of removal efficiency of manganese up to 97.5% for 10 ppm Mn concentration, suggesting that irradiated MWNT filter is a better Mn adsorbent from aqueous solutions than the pristine one. Radiation-induced chemical functionalization of MWNTs due to ion beam irradiation, suggesting that complexation between the irradiated MWNTs and manganese ions is another mechanism. This conclusion is supported by EDS and RS and is correlated with a larger disorder in the irradiated samples as follows from RS. The study demonstrates that ion beam irradiation is a promising tool to enhance the filtration efficiency of MWNT filters.

Radiation effects and damage formation in semiconductors due to high-energy ion irradiation

Energy Technology Data Exchange (ETDEWEB)

Kamarou, A.

2006-11-07

The object of this thesis was the study of ion-beam induced damage formation and annealing in crystalline and conventionally predamaged Ge, GaAs, and InP. The samples were irradiated either at {approx}80 K or at room temperature with Kr, Xe, or Au ions with specific energy of about 0.3 MeV/u to 3 MeV/u. Thereafter the samples were studied by means of Rutherford backscattering spectroscopy and/or transmission electron microscopy.

Radiation effects and damage formation in semiconductors due to high-energy ion irradiation

International Nuclear Information System (INIS)

Kamarou, A.

2006-01-01

The object of this thesis was the study of ion-beam induced damage formation and annealing in crystalline and conventionally predamaged Ge, GaAs, and InP. The samples were irradiated either at ∼80 K or at room temperature with Kr, Xe, or Au ions with specific energy of about 0.3 MeV/u to 3 MeV/u. Thereafter the samples were studied by means of Rutherford backscattering spectroscopy and/or transmission electron microscopy

Moessbauer study of defects in molybdenum and chromium irradiated with ions

International Nuclear Information System (INIS)

Troyan, V.A.; Bogdanov, V.V.; Ivanyushkin, E.M.; Pen'kov, Yu.P.

1980-01-01

Effects of ion irradiation of monocrystalline molybdenum and polycrystalline chromium with Co-57 impurity were studied by Moessbauer effect. Molybdenum specimens were irradiated by He + ions at accelerators with 40 keV energy. Chromium specimens were irradiated by hydrogen ions with 1.2 MeV energy up to integral 2x10 17 -2x10 19 ion/cm 2 doses. It is shown, that defect introduction into the source matrix by irradiation results in change of gamma-resonance line form and effect value. The observed effects of defect influence on spectrum parameters are discussed. It is concluded, that study of Moessbauer spectra parameters of diluted Co-57 solutions in matrices of different metals permits to determine dynamics of movement of impurity atoms and defects in metals irradiated with ions [ru

Influence of ion irradiation induced defects on mechanical properties of copper nanowires

International Nuclear Information System (INIS)

Li, Weina; Sun, Lixin; Xue, Jianming; Wang, Jianxiang; Duan, Huiling

2013-01-01

The mechanical properties of copper nanowires irradiated with energetic ions have been investigated by using molecular dynamics simulations. The Cu ions with energies ranging from 0.2 to 8.0 keV are used in our simulation, and both the elastic properties and yields under tension and compression are analyzed. The results show that two kinds of defects, namely point defects and stacking faults, appear in the irradiated nanowires depending on the incident ion energy. The Young modulus is significantly reduced by the ion irradiation, and the reduction magnitude depends on the vacancy number, which is determined by the ion energy. Moreover, the irradiated nanowires yield at a smaller strain, compared with the unirradiated nanowire. The mechanism for these changes are also discussed

Enhancements to the Low-Energy Ion Facility at SUNY Geneseo

Science.gov (United States)

Barfield, Zachariah; Kostick, Steven; Nagasing, Ethan; Fletcher, Kurt; Padalino, Stephen

2017-10-01

The Low Energy Ion Facility at SUNY Geneseo is used for detector development and characterization for inertial confinement fusion diagnostics. The system has been upgraded to improve the ion beam quality by reducing contaminant ions. In the new configuration, ions produced by the Peabody Scientific duoplasmatron ion source are accelerated through a potential, focused into a new NEC analyzing magnet and directed to an angle of 30°. A new einzel lens on the output of the magnet chamber focuses the beam into a scattering chamber with a water-cooled target mount and rotatable detector mount plates. The analyzing magnet has been calibrated for deuteron, 4He+, and 4He2+ ion beams at a range of energies, and no significant hysteresis has been observed. The system can accelerate deuterons to energies up to 25 keV to initiate d-d fusion using a deuterated polymer target. Charged particle spectra with protons, tritons, and 3He ions from d-d fusion have been measured at scattering angles ranging from 55° to 135°. A time-of-flight beamline has been designed to measure the energies of ions elastically scattered at 135°. CEM detectors initiate start and stop signals from secondary electrons produced when low energy ions pass through very thin carbon foils. Funded in part by the U.S. Department of Energy through the Laboratory for Laser Energetics.

The low-energy-beam and ion-trap facility at NSCL/MSU

Energy Technology Data Exchange (ETDEWEB)

Schwarz, S. E-mail: schwarz@nscl.msu.edu; Bollen, G.; Lawton, D.; Lofy, P.; Morrissey, D.J.; Ottarson, J.; Ringle, R.; Schury, P.; Sun, T.; Varentsov, V.; Weissman, L

2003-05-01

The goal of the low-energy-beam and ion-trap (LEBIT) project is to convert the high-energy exotic beams produced at NSCL/MSU into low-energy low-emittance beams. This beam manipulation will be done by a combination of a high-pressure gas stopping cell and a radio-frequency quadrupole ion accumulator and buncher. The first experimental program to profit from the low-energy beams produced will be high-accuracy mass measurements on very short-lived isotopes with a 9.4 T Penning trap system. The status of the project is presented with an emphasis on recent stopping tests range of 100 MeV/A {sup 40}Ar{sup 18+} ions in a gas cell.

The low-energy-beam and ion-trap facility at NSCL/MSU

International Nuclear Information System (INIS)

Schwarz, S.; Bollen, G.; Lawton, D.; Lofy, P.; Morrissey, D.J.; Ottarson, J.; Ringle, R.; Schury, P.; Sun, T.; Varentsov, V.; Weissman, L.

2003-01-01

The goal of the low-energy-beam and ion-trap (LEBIT) project is to convert the high-energy exotic beams produced at NSCL/MSU into low-energy low-emittance beams. This beam manipulation will be done by a combination of a high-pressure gas stopping cell and a radio-frequency quadrupole ion accumulator and buncher. The first experimental program to profit from the low-energy beams produced will be high-accuracy mass measurements on very short-lived isotopes with a 9.4 T Penning trap system. The status of the project is presented with an emphasis on recent stopping tests range of 100 MeV/A 40 Ar 18+ ions in a gas cell

InN: Fermi level stabilization by low-energy ion bombardment

International Nuclear Information System (INIS)

Piper, L.F.J.; Veal, T.D.; McConville, C.F.; Lu, H.; Schaff, W.J.

2006-01-01

The near-surface electronic properties of InN have been investigated with high-resolution electron-energy loss spectroscopy. Low-energy (∝400 eV) nitrogen ion bombardment followed by low temperature annealing (<300 C) was found to dramatically increase the n-type conductivity of InN, close to the surface. This is explained in terms of the formation of amphoteric defects from the ion bombardment and annealing combined with the band structure of InN. Low-energy ion bombardment and annealing is shown to result in a damage-induced, donor-like defect-profile instead of the expected electron accumulation for InN. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Surface structure modification of single crystal graphite after slow, highly charged ion irradiation

Science.gov (United States)

Alzaher, I.; Akcöltekin, S.; Ban-d'Etat, B.; Manil, B.; Dey, K. R.; Been, T.; Boduch, P.; Rothard, H.; Schleberger, M.; Lebius, H.

2018-04-01

Single crystal graphite was irradiated by slow, highly charged ions. The modification of the surface structure was studied by means of Low-Energy Electron Diffraction. The observed damage cross section increases with the potential energy, i.e. the charge state of the incident ion, at a constant kinetic energy. The potential energy is more efficient for the damage production than the kinetic energy by more than a factor of twenty. Comparison with earlier results hints to a strong link between early electron creation and later target atom rearrangement. With increasing ion fluence, the initially large-scale single crystal is first transformed into μ m-sized crystals, before complete amorphisation takes place.

Focused ion beam (FIB) milling of electrically insulating specimens using simultaneous primary electron and ion beam irradiation

International Nuclear Information System (INIS)

Stokes, D J; Vystavel, T; Morrissey, F

2007-01-01

There is currently great interest in combining focused ion beam (FIB) and scanning electron microscopy technologies for advanced studies of polymeric materials and biological microstructures, as well as for sophisticated nanoscale fabrication and prototyping. Irradiation of electrically insulating materials with a positive ion beam in high vacuum can lead to the accumulation of charge, causing deflection of the ion beam. The resultant image drift has significant consequences upon the accuracy and quality of FIB milling, imaging and chemical vapour deposition. A method is described for suppressing ion beam drift using a defocused, low-energy primary electron beam, leading to the derivation of a mathematical expression to correlate the ion and electron beam energies and currents with other parameters required for electrically stabilizing these challenging materials

Ion-beam doping of GaAs with low-energy (100 eV) C + using combined ion-beam and molecular-beam epitaxy

Science.gov (United States)

Iida, Tsutomu; Makita, Yunosuke; Kimura, Shinji; Winter, Stefan; Yamada, Akimasa; Fons, Paul; Uekusa, Shin-ichiro

1995-01-01

A combined ion-beam and molecular-beam-epitaxy (CIBMBE) system has been developed. This system consists of an ion implanter capable of producing ions in the energy range of 30 eV-30 keV and conventional solid-source MBE. As a successful application of CIBMBE, low-energy (100 eV) carbon ion (C+) irradiation during MBE growth of GaAs was carried out at substrate temperatures Tg between 500 and 590 °C. C+-doped layers were characterized by low-temperature (2 K) photoluminescence (PL), Raman scattering, and van der Pauw measurements. PL spectra of undoped GaAs grown by CIBMBE revealed that unintentional impurity incorporation into the epilayer is extremely small and precise doping effects are observable. CAs acceptor-related emissions such as ``g,'' [g-g], and [g-g]β are observed and their spectra are significantly changed with increasing C+ beam current density Ic. PL measurements showed that C atoms were efficiently incorporated during MBE growth by CIBMBE and were optically well activated as an acceptor in the as-grown condition even for Tg as low as 500 °C. Raman measurement showed negligible lattice damage of the epilayer bombarded with 100 eV C+ with no subsequent heat treatment. These results indicate that contamination- and damage-free impurity doping without postgrowth annealing can be achieved by the CIBMBE method.

Ion-beam doping of GaAs with low-energy (100 eV) C(+) using combined ion-beam and molecular-beam epitaxy

Science.gov (United States)

Lida, Tsutomu; Makita, Yunosuke; Kimura, Shinji; Winter, Stefan; Yamada, Akimasa; Fons, Paul; Uekusa, Shin-Ichiro

1995-01-01

A combined ion-beam and molecular-beam-epitaxy (CIBMBE) system has been developed. This system consists of an ion implanter capable of producing ions in the energy range of 30 eV - 30 keV and conventional solid-source MBE. As a successful application of CIBMBE, low-energy (100 eV) carbon ion (C(+)) irradiation during MBE growth of GaAs was carried out at substrate temperatures T(sub g) between 500 and 590 C. C(+)-doped layers were characterized by low-temperature (2 K) photoluminescence (PL), Raman scattering, and van der Pauw measurements. PL spectra of undoped GaAs grown by CIBMBE revealed that unintentional impurity incorporation into the epilayer is extremely small and precise doping effects are observable. C(sub As) acceptor-related emissions such as 'g', (g-g), and (g-g)(sub beta) are observed and their spectra are significantly changed with increasing C(+) beam current density I(sub c). PL measurements showed that C atoms were efficiently incorporated during MBE growth by CIBMBE and were optically well activated as an acceptor in the as-grown condition even for T(sub g) as low as 500 C. Raman measurement showed negligible lattice damage of the epilayer bombarded with 100 eV C(+) with no subsequent heat treatment. These results indicate that contamination- and damage-free impurity doping without postgrowth annealing can be achieved by the CIBMBE method.

Swift heavy ion irradiation effects on carbonyl and trans-vinylene groups in high and low density polyethylene

International Nuclear Information System (INIS)

Grosso, M.F. del; Chappa, V.C.; Arbeitman, C.R.; Garcia Bermudez, G.; Behar, M.

2009-01-01

In this work, we have studied the effects of swift heavy ion irradiation on the creation of new functional groups in high and low density polyethylene (HDPE and LDPE). Polymers were irradiated with different ions (6.77 MeV He and 47 MeV Li) and fluences. The induced changes were analyzed by Fourier transform infrared (FTIR) spectroscopy. Creation and damage cross sections for some groups were compared for two different types of PE.

Swift heavy ion irradiation effects on carbonyl and trans-vinylene groups in high and low density polyethylene

Energy Technology Data Exchange (ETDEWEB)

Grosso, M.F. del, E-mail: delgrosso@tandar.cnea.gov.a [Gerencia de Investigacion y Aplicaciones, TANDAR-CNEA (Argentina); Chappa, V.C. [Gerencia de Investigacion y Aplicaciones, TANDAR-CNEA (Argentina); CONICET (Argentina); Arbeitman, C.R. [Gerencia de Investigacion y Aplicaciones, TANDAR-CNEA (Argentina); Garcia Bermudez, G. [Gerencia de Investigacion y Aplicaciones, TANDAR-CNEA (Argentina); CONICET (Argentina); Escuela de Ciencia y Tecnologia, UNSAM (Argentina); Behar, M. [Instituto de Fisica, UFRGS, Porto Alegre (Brazil)

2009-10-01

In this work, we have studied the effects of swift heavy ion irradiation on the creation of new functional groups in high and low density polyethylene (HDPE and LDPE). Polymers were irradiated with different ions (6.77 MeV He and 47 MeV Li) and fluences. The induced changes were analyzed by Fourier transform infrared (FTIR) spectroscopy. Creation and damage cross sections for some groups were compared for two different types of PE.

Electrical properties of irradiated PVA film by using ion/electron beam

Science.gov (United States)

Abdelrahman, M. M.; Osman, M.; Hashhash, A.

2016-02-01

Ion/electron beam bombardment has shown great potential for improving the surface properties of polymers. Low-energy charged (ion/electron) beam irradiation of polymers is a good technique to modify properties such as electrical conductivity, structural behavior, and their mechanical properties. This paper reports on the effect of nitrogen and electron beam irradiation on the electrical properties of polyvinyl alcohol (PVA) films. PVA films of 4 mm were exposed to a charged (ion/electron) beam for different treatment times (15, 30, and 60 minutes); the beam was produced from a dual beam source using nitrogen gas with the other ion/electron source parameters optimized. The dielectric loss tangent tan δ , electrical conductivity σ , and dielectric constant ɛ ^' } in the frequency range 100 Hz-100 kHz were measured at room temperature. The variation of dielectric constant and loss tangent as a function of frequency was also studied at room temperature. The dielectric constant was found to be strongly dependent on frequency for both ion and electron beam irradiation doses. The real (ɛ ^' }) and imaginary (ɛ ^' ' }) parts of the dielectric constant decreased with frequency for all irradiated and non-irradiated samples. The AC conductivity showed an increase with frequency for all samples under the influence of both ion and electron irradiation for different times. Photoluminescence (PL) spectral changes were also studied. The formation of clusters and defects (which serve as non-radiative centers on the polymer surface) is confirmed by the decrease in the PL intensity.

The low-energy-beam and ion-trap facility at NSCL/MSU

CERN Document Server

Schwarz, S; Lawton, D; Lofy, P; Morrissey, D J; Ottarson, J; Ringle, R; Schury, P; Sun, T; Varentsov, V; Weissman, L

2003-01-01

The goal of the low-energy-beam and ion-trap (LEBIT) project is to convert the high-energy exotic beams produced at NSCL/MSU into low-energy low-emittance beams. This beam manipulation will be done by a combination of a high-pressure gas stopping cell and a radio-frequency quadrupole ion accumulator and buncher. The first experimental program to profit from the low-energy beams produced will be high-accuracy mass measurements on very short-lived isotopes with a 9.4 T Penning trap system. The status of the project is presented with an emphasis on recent stopping tests range of 100 MeV/A sup 4 sup 0 Ar sup 1 sup 8 sup + ions in a gas cell.

A comparative study on low-energy ion beam and neutralized beam modifications of naked DNA and biological effect on mutation

Science.gov (United States)

Sarapirom, S.; Thongkumkoon, P.; Prakrajang, K.; Anuntalabhochai, S.; Yu, L. D.

2012-02-01

DNA conformation change or damage induced by low-energy ion irradiation has been of great interest owing to research developments in ion beam biotechnology and ion beam application in biomedicine. Mechanisms involved in the induction of DNA damage may account for effect from implanting ion charge. In order to check this effect, we used both ion beam and neutralized beam at keV energy to bombard naked DNA. Argon or nitrogen ion beam was generated and extracted from a radiofrequency (RF) ion source and neutralized by microwave-driven plasma in the beam path. Plasmid DNA pGFP samples were irradiated with the ion or neutralized beam in vacuum, followed by gel electrophoresis to observe changes in the DNA conformations. It was revealed that the ion charge played a certain role in inducing DNA conformation change. The subsequent DNA transfer into bacteria Escherichia coli ( E. coli) for mutation analysis indicated that the charged ion beam induced DNA change had high potential in mutation induction while neutralized beam did not. The intrinsic reason was attributed to additional DNA deformation and contortion caused by ion charge exchange effect so that the ion beam induced DNA damage could hardly be completely repaired, whereas the neutralized beam induced DNA change could be more easily recoverable owing to absence of the additional DNA deformation and contortion.

A comparative study on low-energy ion beam and neutralized beam modifications of naked DNA and biological effect on mutation

International Nuclear Information System (INIS)

Sarapirom, S.; Thongkumkoon, P.; Prakrajang, K.; Anuntalabhochai, S.; Yu, L.D.

2012-01-01

DNA conformation change or damage induced by low-energy ion irradiation has been of great interest owing to research developments in ion beam biotechnology and ion beam application in biomedicine. Mechanisms involved in the induction of DNA damage may account for effect from implanting ion charge. In order to check this effect, we used both ion beam and neutralized beam at keV energy to bombard naked DNA. Argon or nitrogen ion beam was generated and extracted from a radiofrequency (RF) ion source and neutralized by microwave-driven plasma in the beam path. Plasmid DNA pGFP samples were irradiated with the ion or neutralized beam in vacuum, followed by gel electrophoresis to observe changes in the DNA conformations. It was revealed that the ion charge played a certain role in inducing DNA conformation change. The subsequent DNA transfer into bacteria Escherichia coli (E. coli) for mutation analysis indicated that the charged ion beam induced DNA change had high potential in mutation induction while neutralized beam did not. The intrinsic reason was attributed to additional DNA deformation and contortion caused by ion charge exchange effect so that the ion beam induced DNA damage could hardly be completely repaired, whereas the neutralized beam induced DNA change could be more easily recoverable owing to absence of the additional DNA deformation and contortion.

TEM study of damage recovery in SiC by swift Xe ion irradiation

International Nuclear Information System (INIS)

Skuratov, V.A.; O’Connell, J.; Sohatsky, A.S.; Neethling, J.

2014-01-01

The microstructure of 4H–SiC samples subsequently irradiated with low energy He (10 keV), Ti (220 keV) and high energy (167 MeV) Xe ions has been studied using cross-sectional transmission electron microscopy. It was found that xenon ions with fluences above 10 13 cm −2 restore crystallinity in a heavily damaged partially amorphous zone. No, or negligible damage recovery is observed in fully amorphized layers of silicon carbide

Positive ion irradiation facility

International Nuclear Information System (INIS)

Braby, L.A.

1985-01-01

Many questions about the mechanisms of the response of cells to ionizing radiation can best be investigated using monoenergetic heavy charged particle beams. Questions of the role of different types of damage in the LET effect, for example, are being answered by comparing repair kinetics for damage induced by electrons with that produced by helium ions. However, as the models become more sophicated, the differences between models can be detected only with more precise measurements, or by combining high- and low-LET irradiations in split-dose experiments. The design of the authors present cell irradiation beam line has limited the authors to irradiating cells in a partial vacuum. A new way to mount the dishes and bring the beam to the cells was required. Several means of irradiating cells in mylar-bottom dishes have been used at other laboratories. For example at the RARAF Facility, the dual ion experiments are done with the dish bottom serving as the beam exit window but the cells are in a partial vacuum to prevent breaking the window. These researchers have chosen instead to use the dish bottom as the beam window and to irradiate the entire dish in a single exposure. A special, very fast pumping system will be installed at the end of the beam line. This system will make it possible to irradiate cells within two minutes of installing them in the irradiation chamber. In this way, the interaction of electron and ion-induced damage in Chlamydomonas can be studied with time between doses as short as 5 minutes

Fractal characteristics of fracture morphology of steels irradiated with high-energy ions

Energy Technology Data Exchange (ETDEWEB)

Xian, Yongqiang; Liu, Juan [Institute of Modern Physics, Chinese Academy of Science, Lanzhou 730000 (China); University of Chinese Academy of Science, Beijing 100049 (China); Zhang, Chonghong, E-mail: c.h.zhang@impcas.ac.cn [Institute of Modern Physics, Chinese Academy of Science, Lanzhou 730000 (China); Chen, Jiachao [Paul Scherrer Institute, Villigen PSI (Switzerland); Yang, Yitao; Zhang, Liqing; Song, Yin [Institute of Modern Physics, Chinese Academy of Science, Lanzhou 730000 (China)

2015-06-15

Highlights: • Fractal dimensions of fracture surfaces of steels before and after irradiation were calculated. • Fractal dimension can effectively describe change of fracture surfaces induced by irradiation. • Correlation of change of fractal dimension with embrittlement of irradiated steels is discussed. - Abstract: A fractal analysis of fracture surfaces of steels (a ferritic/martensitic steel and an oxide-dispersion-strengthened ferritic steel) before and after the irradiation with high-energy ions is presented. Fracture surfaces were acquired from a tensile test and a small-ball punch test (SP). Digital images of the fracture surfaces obtained from scanning electron microscopy (SEM) were used to calculate the fractal dimension (FD) by using the pixel covering method. Boundary of binary image and fractal dimension were determined with a MATLAB program. The results indicate that fractal dimension can be an effective parameter to describe the characteristics of fracture surfaces before and after irradiation. The rougher the fracture surface, the larger the fractal dimension. Correlation of the change of fractal dimension with the embrittlement of the irradiated steels is discussed.

Linear Energy Transfer-Dependent Change in Rice Gene Expression Profile after Heavy-Ion Beam Irradiation.

Science.gov (United States)

Ishii, Kotaro; Kazama, Yusuke; Morita, Ryouhei; Hirano, Tomonari; Ikeda, Tokihiro; Usuda, Sachiko; Hayashi, Yoriko; Ohbu, Sumie; Motoyama, Ritsuko; Nagamura, Yoshiaki; Abe, Tomoko

2016-01-01

A heavy-ion beam has been recognized as an effective mutagen for plant breeding and applied to the many kinds of crops including rice. In contrast with X-ray or γ-ray, the heavy-ion beam is characterized by a high linear energy transfer (LET). LET is an important factor affecting several aspects of the irradiation effect, e.g. cell survival and mutation frequency, making the heavy-ion beam an effective mutagen. To study the mechanisms behind LET-dependent effects, expression profiling was performed after heavy-ion beam irradiation of imbibed rice seeds. Array-based experiments at three time points (0.5, 1, 2 h after the irradiation) revealed that the number of up- or down-regulated genes was highest 2 h after irradiation. Array-based experiments with four different LETs at 2 h after irradiation identified LET-independent regulated genes that were up/down-regulated regardless of the value of LET; LET-dependent regulated genes, whose expression level increased with the rise of LET value, were also identified. Gene ontology (GO) analysis of LET-independent up-regulated genes showed that some GO terms were commonly enriched, both 2 hours and 3 weeks after irradiation. GO terms enriched in LET-dependent regulated genes implied that some factor regulates genes that have kinase activity or DNA-binding activity in cooperation with the ATM gene. Of the LET-dependent up-regulated genes, OsPARP3 and OsPCNA were identified, which are involved in DNA repair pathways. This indicates that the Ku-independent alternative non-homologous end-joining pathway may contribute to repairing complex DNA legions induced by high-LET irradiation. These findings may clarify various LET-dependent responses in rice.

Effect on structure and mechanical property of tungsten irradiated by high intensity pulsed ion beam

Science.gov (United States)

Mei, Xianxiu; Zhang, Xiaonan; Liu, Xiaofei; Wang, Younian

2017-09-01

The anti-thermal radiation performance of tungsten was investigated by high intensity pulsed ion beam technology. The ion beam was mainly composed of Cn+ (70%) and H+ (30%) at an acceleration voltage of 250 kV under different energy densities for different number of pulses. GIXRD analysis showed that no obvious phase structural changes occurred on the tungsten, and microstress generated. SEM analysis exhibited that there was no apparent irradiation damage on the surface of tungsten at the low irradiation frequency (3 times and 10 times) and at the low energy density (0.25 J/cm2 and 0.7 J/cm2). Cracks appeared on the surface of tungsten after 100-time and 300-time irradiation. Shedding phenomenon even appeared on the surface of tungsten at the energy densities of 1.4 J/cm2 and 2.0 J/cm2. The surface nano-hardness of tungsten decreased with the increase of the pulse times and the energy density. The tungsten has good anti-thermal radiation properties under certain heat load environment.

Structural response of titanate pyrochlores to swift heavy ion irradiation

International Nuclear Information System (INIS)

Shamblin, Jacob; Tracy, Cameron L.; Ewing, Rodney C.; Zhang, Fuxiang; Li, Weixing; Trautmann, Christina; Lang, Maik

2016-01-01

The structure, size, and morphology of ion tracks resulting from irradiation of five different pyrochlore compositions (A 2 Ti 2 O 7 , A = Yb, Er, Y, Gd, Sm) with 2.2 GeV 197 Au ions were investigated by means of synchrotron X-ray diffraction (XRD) and high-resolution transmission electron microscopy (HRTEM). Radiation-induced amorphization occurred in all five materials analyzed following an exponential rate as a function of ion fluence. XRD patterns showed a general trend of increasing susceptibility of amorphization with increasing ratio of A- to B-site cation ionic radii (r A /r B ) with the exception of Y 2 Ti 2 O 7 and Sm 2 Ti 2 O 7 . This indicates that the track size does not necessarily increase with r A /r B , in contrast with results from previous swift heavy ion studies on Gd 2 Zr 2-x Ti x O 7 pyrochlore materials. For Y 2 Ti 2 O 7 , this effect is attributed to the significantly lower electron density of this material relative to the lanthanide-bearing pyrochlores, thus lowering the electronic energy loss (dE/dx) of the high-energy ions in this composition. An energy loss normalization procedure was performed which reveals an initial increase of amorphous track size with r A /r B that saturates above a cation radius ratio larger than Gd 2 Ti 2 O 7 . This is in agreement with previous low-energy ion irradiation experiments and first principles calculations of the disordering energy of titanate pyrochlores indicating that the same trends in disordering energy apply to radiation damage induced in both the nuclear and electronic energy loss regimes. HRTEM images indicate that single ion tracks in Yb 2 Ti 2 O 7 and Er 2 Ti 2 O 7 , which have small A-site cations and low r A /r B , exhibit a core-shell structure with a small amorphous core surrounded by a larger disordered shell. In contrast, single tracks in Gd 2 Ti 2 O 7 and Sm 2 Ti 2 O 7 , have a larger amorphous core with minimal disordered shells.

Chemical Bonding States of TiC Films before and after Hydrogen Ion Irradiation

Institute of Scientific and Technical Information of China (English)

无

2007-01-01

TiC films deposited by rf magnetron sputtering followed by Ar+ ion bombardment were irradiated with a hydrogen ion beam. X-ray photoelectron spectroscopy (XPS) was used for characterization of the chemical bonding states of C and Ti elements of the TiC films before and after hydrogen ion irradiation, in order to understand the effect of hydrogen ion irradiation on the films and to study the mechanism of hydrogen resistance of TiC films. Conclusions can be drawn that ion bombardment at moderate energy can cause preferential physical sputtering of carbon atoms from the surface of low atomic number (Z) material. This means that ion beam bombardment leads to the formation of a non-stoichiometric composition of TiC on the surface.TiC films prepared by ion beam mixing have the more excellent characteristic of hydrogen resistance. One important cause, in addition to TiC itself, is that there are many vacant sites in TiC created by ion beam mixing.These defects can easily trap hydrogen and effectively enhance the effect of hydrogen resistance.

LEBIT - a low-energy beam and ion trap facility at NSCL/MSU

International Nuclear Information System (INIS)

Schwarz, S.; Bollen, G.; Davies, D.; Lawton, D.; Lofy, P.; Morrissey, D. J.; Ottarson, J.; Ringle, R.; Schury, P.; Sun, T.; VanWasshenova, D.; Sun, T.; Weissman, L.; Wiggins, D.

2003-01-01

The Low Energy Beam and Ion Trap (LEBIT) Project aims to convert the high-energy exotic beams produced at NSCL/MSU into low-energy low-emittance beams. A combination of a high-pressure gas stopping cell and a radiofrequency quadrupole (RFQ) ion accumulator and buncher will be used to manipulate the beam accordingly. High-accuracy mass measurements on very short-lived isotopes with a 9.4 T Penning trap system will be the first experimental program to profit from the low-energy beams. The status of the project is presented with a focus on recent stopping tests of 100-140 MeV/A Ar18+ ions in a gas cell

Heavy ion irradiation effects of polymer film on absorption of light

Energy Technology Data Exchange (ETDEWEB)

Kasai, Noboru; Seguchi, Tadao [Japan Atomic Energy Research Inst., Takasaki, Gunma (Japan). Takasaki Radiation Chemistry Research Establishment; Arakawa, Tetsuhito

1997-03-01

Ion irradiation effects on the absorption of light for three types of polymer films; polyethylene-terephthalate (PET), polyethylene-naphthalate (PEN), and polyether-ether-ketone (PEEK) were investigated by irradiation of heavy ions with Ni{sup 4+}(15MeV), O{sup 6+}(160MeV), and Ar{sup 8+}(175MeV), and compared with electron beams(EB) irradiation. The change of absorption at 400nm by a photometer was almost proportional to total dose for ions and EB. The absorption per absorbed dose was much high in Ni{sup 4+}, but rather small in O{sup 6+} and Ar{sup 8+} irradiation, and the absorption by EB irradiation was accelerated by the temperature of polymer film during irradiation. The beam heating of materials during ion irradiation was assumed, especially for Ni ion irradiation. The heavy ion irradiation effect of polymers was thought to be much affected by the ion beam heating than the linear energy transfer(LET) of radiation source. (author)

Study of the thermal oxidation of titanium and zirconium under argon ion irradiation in the low MeV range (E = 15 MeV)

International Nuclear Information System (INIS)

Do, N.-L.

2012-01-01

We have shown that argon ion irradiation between 1 and 15 MeV produces damage on both titanium and zirconium surfaces, taking the form of accelerated oxidation and/or craterization effects, varying as a function of the projectile energy and the annealing atmosphere (temperature and pressure) simulating the environmental conditions of the fuel/cladding interface of PWR fuel rods. Using AFM, we have shown that the titanium and zirconium surface is attacked under light argon ion bombardment at high temperature (up to 500 C) in weakly oxidizing medium (under rarefied dry air pressure ranging from 5,7 10 -5 Pa to 5 10 -3 Pa) for a fixed fluence of about 5 10 14 ions.cm -2 . We observed the formation of nano-metric craters over the whole titanium surface irradiated between 2 and 9 MeV and the whole zirconium surface irradiated at 4 MeV, the characteristics of which vary depending on the temperature and the pressure. In the case of the Ar/Ti couple, the superficial damage efficiency increases when the projectile energy decreases from 9 to 2 MeV. Moreover, whereas the titanium surface seems to be transparent under the 15-MeV ion beam, the zirconium surface exhibits numerous micrometric craters surrounded by a wide halo. The crater characteristics (size and superficial density) differ significantly from that observed both in the low energy range (keV) where the energy losses are controlled by ballistic collisions (Sn) and in the high energy range (MeV - GeV) where the energy losses are controlled by electronic excitations (Se), which was not completely unexpected in this intermediate energy range for which combined Sn - Se stopping power effects are possibly foreseen. Using XPS associated to ionic sputtering, we have shown that there is an irradiation effect on thermal oxidation of titanium, enhanced under the argon ion beam between 2 and 9 MeV, and that there is also an energy effect on the oxide thickness and stoichiometry. The study conducted using Spectroscopic

Behavior of carbon readsorbed on tungsten during low energy Ar ion irradiation at elevated temperatures

International Nuclear Information System (INIS)

Pranevicius, L.; Pranevicius, L.L.; Milcius, D.; Templier, C.; Bobrovaite, B.

2008-01-01

A study of the behavior of carbon sputtered and readsorbed after scattering collisions with particles of surrounding gas on the tungsten surface affected by Ar ion irradiation with the flux equal to 2 x 10 16 cm -2 s -1 extracted from plasma under 300 V negative bias voltage in the temperature range 370-870 K was performed. The dependence of the W sample weight change on the working gas pressure in the range 0.1-10 Pa was registered and the information was deduced about prevailing sputtering-redeposition processes. The depth profiles of carbon at the tungsten surface were measured. We found that carbon distribution profiles in tungsten depend on the C redeposition rate for fixed ion irradiation parameters. Three regimes have been distinguished: (i) at working gas pressure equal to 5 Pa and more, the C redeposition rate prevails the sample surface erosion rate and the W surface is covered by continuous amorphous carbon film (the C film growth regime), (ii) at working gas pressure equal to about 1 Pa, the C redepostion rate is approximately equal to the erosion rate and the W surface is partially covered by redeposited carbon, and (iii) at working gas pressure less than 0.2 Pa, the erosion rate prevails the C redeposition rate (the W surface erosion regime). In the regime of balanced redeposition and erosion deep C penetration depth into nanocrystalline W was registered. It is suggested that under simultaneous C adsorption and ion irradiation at elevated temperature C adatoms are driven from the W surface into grain boundaries and into the bulk by the difference in chemical potentials between the activated W surface and grain boundaries. As the W surface is covered by amorphous C film, the grain boundaries are blocked and the efficiency of carbon transport decreases

Low energy ion beam systems for surface analytical and structural studies

International Nuclear Information System (INIS)

Nelson, G.C.

1980-01-01

This paper reviews the use of low energy ion beam systems for surface analytical and structural studies. Areas where analytical methods which utilize ion beams can provide a unique insight into materials problems are discussed. The design criteria of ion beam systems for performing materials studies are described and the systems now being used by a number of laboratories are reviewed. Finally, several specific problems are described where the solution was provided at least in part by information provided by low energy ion analysis techniques

Heavy ions amorphous semiconductors irradiation study

International Nuclear Information System (INIS)

Benmalek, M.

1978-01-01

The behavior of amorphous semiconductors (germanium and germanium and arsenic tellurides) under ion bombardment at energies up to 2 MeV was studied. The irradiation induced modifications were followed using electrical parameter changes (resistivity and activation energy) and by means of the transmission electron microscopy observations. The electrical conductivity enhancement of the irradiated samples was interpreted using the late conduction theories in amorphous compounds. In amorphous germanium, Electron Microscopy showed the formations of 'globules', these defects are similar to voids observed in irradiated metals. The displacement cascade theory was used for the interpretation of the irradiation induced defects formation and a coalescence mechanism of growth was pointed out for the vacancy agglomeration [fr

TEM study of damage recovery in SiC by swift Xe ion irradiation

Energy Technology Data Exchange (ETDEWEB)

Skuratov, V.A., E-mail: skuratov@jinr.ru [Joint Institute for Nuclear Research, Dubna (Russian Federation); O’Connell, J. [Centre for HRTEM, Nelson Mandela Metropolitan University, Port Elizabeth (South Africa); Sohatsky, A.S. [Joint Institute for Nuclear Research, Dubna (Russian Federation); Neethling, J. [Centre for HRTEM, Nelson Mandela Metropolitan University, Port Elizabeth (South Africa)

2014-05-01

The microstructure of 4H–SiC samples subsequently irradiated with low energy He (10 keV), Ti (220 keV) and high energy (167 MeV) Xe ions has been studied using cross-sectional transmission electron microscopy. It was found that xenon ions with fluences above 10{sup 13} cm{sup −2} restore crystallinity in a heavily damaged partially amorphous zone. No, or negligible damage recovery is observed in fully amorphized layers of silicon carbide.

Heavy-ion irradiation induced diamond formation in carbonaceous materials

International Nuclear Information System (INIS)

Daulton, T. L.

1999-01-01

The basic mechanisms of metastable phase formation produced under highly non-equilibrium thermodynamic conditions within high-energy particle tracks are investigated. In particular, the possible formation of diamond by heavy-ion irradiation of graphite at ambient temperature is examined. This work was motivated, in part, by earlier studies which discovered nanometer-grain polycrystalline diamond aggregates of submicron-size in uranium-rich carbonaceous mineral assemblages of Precambrian age. It was proposed that the radioactive decay of uranium formed diamond in the fission particle tracks produced in the carbonaceous minerals. To test the hypothesis that nanodiamonds can form by ion irradiation, fine-grain polycrystalline graphite sheets were irradiated with 400 MeV Kr ions. The ion irradiated graphite (and unirradiated graphite control) were then subjected to acid dissolution treatments to remove the graphite and isolate any diamonds that were produced. The acid residues were then characterized by analytical and high-resolution transmission electron microscopy. The acid residues of the ion-irradiated graphite were found to contain ppm concentrations of nanodiamonds, suggesting that ion irradiation of bulk graphite at ambient temperature can produce diamond

Beamline for low-energy transport of highly charged ions at HITRAP

International Nuclear Information System (INIS)

Andelkovic, Z.; Herfurth, F.; Kotovskiy, N.; König, K.; Maaß, B.; Murböck, T.; Neidherr, D.; Schmidt, S.; Steinmann, J.; Vogel, M.; Vorobjev, G.

2015-01-01

A beamline for transport of highly charged ions with energies as low as a few keV/charge has been constructed and commissioned at GSI. Complementary to the existing infrastructure of the HITRAP facility for deceleration of highly charged ions from the GSI accelerator, the new beamline connects the HITRAP ion decelerator and an EBIT with the associated experimental setups. Therefore, the facility can now transport the decelerated heavy highly charged ions to the experiments or supply them offline with medium-heavy highly charged ions from the EBIT, both at energies as low as a few keV/charge. Here we present the design of the 20 m long beamline with the corresponding beam instrumentation, as well as its performance in terms of energy and transport efficiency

Variations of Low-energy Ion Distributions Measured in the Heliosheath

International Nuclear Information System (INIS)

Decker, R. B.; Roelof, E. C.; Hill, M. E.; Krimigis, S. M.

2010-01-01

This report is an update of low-energy ion intensities and angular distributions measured recently by the Low Energy Charged Particle instruments on the Voyager 1 and 2 spacecraft in the inner heliosheath.

Tuning the conductivity of vanadium dioxide films on silicon by swift heavy ion irradiation

Directory of Open Access Journals (Sweden)

H. Hofsäss

2011-09-01

Full Text Available We demonstrate the generation of a persistent conductivity increase in vanadium dioxide thin films grown on single crystal silicon by irradiation with 1 GeV 238U swift heavy ions at room temperature. VO2 undergoes a temperature driven metal-insulator-transition (MIT at 67 °C. After room temperature ion irradiation with high electronic energy loss of 50 keV/nm the conductivity of the films below the transition temperature is strongly increased proportional to the ion fluence of 5·109 U/cm2 and 1·1010 U/cm2. At high temperatures the conductivity decreases slightly. The ion irradiation slightly reduces the MIT temperature. This observed conductivity change is persistent and remains after heating the samples above the transition temperature and subsequent cooling. Low temperature measurements down to 15 K show no further MIT below room temperature. Although the conductivity increase after irradiation at such low fluences is due to single ion track effects, atomic force microscopy (AFM measurements do not show surface hillocks, which are characteristic for ion tracks in other materials. Conductive AFM gives no evidence for conducting ion tracks but rather suggests the existence of conducting regions around poorly conducting ion tracks, possible due to stress generation. Another explanation of the persistent conductivity change could be the ion-induced modification of a high resistivity interface layer formed during film growth between the vanadium dioxide film and the n-Silicon substrate. The swift heavy ions may generate conducting filaments through this layer, thus increasing the effective contact area. Swift heavy ion irradiation can thus be used to tune the conductivity of VO2 films on silicon substrates.

Ultra-low-energy (<10 eV/u) ion beam bombardment effect on naked DNA

Energy Technology Data Exchange (ETDEWEB)

Thopan, P. [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Thongkumkoon, P. [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Department of Biology, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Prakrajang, K. [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Faculty of Science, Maejo University, Chiang Mai 50290 (Thailand); Suwannakachorn, D. [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Yu, L.D., E-mail: yuld@thep-center.org [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Thailand Center of Excellence in Physics, Commission on Higher Education, 328 Si Ayutthaya Road, Bangkok 10400 (Thailand)

2014-05-01

Highlights: • Decelerated ultra-low energy ion beam bombarded naked DNA. • DNA form change induced by ion bombardment was investigated. • N-ion bombardment at 32 eV induced DNA single and double strand breaks. • Ar-ion bombardment at a-few-hundreds eV induced DNA single strand break. - Abstract: Since ion energy deposition in the ion-bombarded materials dominantly occurs in the low-energy range, it is very interesting to know effects from ultra-low-energy ion interaction with DNA for understanding ion-beam-induced genetic mutation. Tens-keV Ar- and N-ion beams were decelerated to ultra-low energy ranging from 20 to 100 eV, or only a few to 10 eV/u, to bombard naked plasmid DNA. The bombarded DNA was analyzed using gel electrophoresis for DNA form changes. The original DNA supercoiled form was found to change to relaxed and linear forms, indicating single or double strand breaks after bombarded by tens-eV ion beam. N-ion beam was found more effective in inducing DNA change and mutation than Ar-ion beam. The study demonstrated that the ion bombardment with energy as low as several-tens eV was able to break DNA strands and thus potentially to cause genetic modification of biological cells. The experimental results were discussed in terms of direct atomic collision between the ions and DNA atoms.

Ultra-low-energy (<10 eV/u) ion beam bombardment effect on naked DNA

International Nuclear Information System (INIS)

Thopan, P.; Thongkumkoon, P.; Prakrajang, K.; Suwannakachorn, D.; Yu, L.D.

2014-01-01

Highlights: • Decelerated ultra-low energy ion beam bombarded naked DNA. • DNA form change induced by ion bombardment was investigated. • N-ion bombardment at 32 eV induced DNA single and double strand breaks. • Ar-ion bombardment at a-few-hundreds eV induced DNA single strand break. - Abstract: Since ion energy deposition in the ion-bombarded materials dominantly occurs in the low-energy range, it is very interesting to know effects from ultra-low-energy ion interaction with DNA for understanding ion-beam-induced genetic mutation. Tens-keV Ar- and N-ion beams were decelerated to ultra-low energy ranging from 20 to 100 eV, or only a few to 10 eV/u, to bombard naked plasmid DNA. The bombarded DNA was analyzed using gel electrophoresis for DNA form changes. The original DNA supercoiled form was found to change to relaxed and linear forms, indicating single or double strand breaks after bombarded by tens-eV ion beam. N-ion beam was found more effective in inducing DNA change and mutation than Ar-ion beam. The study demonstrated that the ion bombardment with energy as low as several-tens eV was able to break DNA strands and thus potentially to cause genetic modification of biological cells. The experimental results were discussed in terms of direct atomic collision between the ions and DNA atoms

Irradiation effects in Fe-30%Ni alloy during Ar ion implantation

International Nuclear Information System (INIS)

Soukieh, Mohamad; Al-Mohamad, Ali

1993-12-01

The use of metallic thin films for studying the processes which take place during ion irradiation has recently increased. For example, ion implantation is widely used to study the structural defects in transition metallic thin films such as (Fe, Ni, Co), because it can simulate the effects occurring in nuclear reactors during neutron irradiation especially the swelling of reactor materials. The swelling of metals and alloys is strongly related to the material structure and to the irradiation conditions. The general feature of formation of structural defects as a function of irradiation dosage and annealing temperature is well known. However, the detailed mechanisms are still not well understood. For example, the swelling of iron alloy with 30-35% nickel is very small in comparison with other Ni concentrations, and there is no clear information on the possibility of phase transitions in fe-Ni alloys during irradiation. The aim of this work is to study the phase-structural changes in Fe-30% Ni implanted by high dose of argon ions. The effect of irradiation with low energy argon ions (40 KeV, and fluences of 10.E15 to 10.E17 ions/cm) on the deposited thin films of Fe-30% Ni alloy was investigated using RBS and TEM techniques. The thicknesses of these films were about 65+-10 nm deposited on ceramic, KBr, and Be fiols substrates. Gas bubble formation and profile distribution of the implanted argon ions were investigated. Formation of an ordered phase Fe 3 Ni during irradiation appears to inhibit gas bubble formations in the film structure. (author). 17 refs., 15 figs., 7 tabs

Challenges in validating radiation sterilization with low energy electron irradiation

International Nuclear Information System (INIS)

Miller, A.; Helt-Hansen, J.

2011-01-01

Complete text of publication follows. Low energy electron irradiation (80-300 keV) is used increasingly for sterilization or decontamination in connection with isolators for aseptic filling lines in the pharmaceutical industry. It is not defined how validation for this process shall be carried out. A method can be derived from the medical device standard for radiation sterilization, ISO 11137, because the principles described in this standard can be applied to almost any industrial irradiation process. The validations elements are: Process definition, concerning specification of the dose required for the process and the maximum acceptable dose for the product. Installation qualification, concerning acceptance the irradiation facility. Operational qualification, concerning characterization of the facility. Performance qualification, concerning setting up the process. Process control, concerning routine monitoring. The limited penetration of the low energy electrons leads to problems with respect to executing these validation steps. This paper discusses these problems, and shows with examples how they can be solved.

Linear Energy Transfer-Dependent Change in Rice Gene Expression Profile after Heavy-Ion Beam Irradiation.

Directory of Open Access Journals (Sweden)

Kotaro Ishii

Full Text Available A heavy-ion beam has been recognized as an effective mutagen for plant breeding and applied to the many kinds of crops including rice. In contrast with X-ray or γ-ray, the heavy-ion beam is characterized by a high linear energy transfer (LET. LET is an important factor affecting several aspects of the irradiation effect, e.g. cell survival and mutation frequency, making the heavy-ion beam an effective mutagen. To study the mechanisms behind LET-dependent effects, expression profiling was performed after heavy-ion beam irradiation of imbibed rice seeds. Array-based experiments at three time points (0.5, 1, 2 h after the irradiation revealed that the number of up- or down-regulated genes was highest 2 h after irradiation. Array-based experiments with four different LETs at 2 h after irradiation identified LET-independent regulated genes that were up/down-regulated regardless of the value of LET; LET-dependent regulated genes, whose expression level increased with the rise of LET value, were also identified. Gene ontology (GO analysis of LET-independent up-regulated genes showed that some GO terms were commonly enriched, both 2 hours and 3 weeks after irradiation. GO terms enriched in LET-dependent regulated genes implied that some factor regulates genes that have kinase activity or DNA-binding activity in cooperation with the ATM gene. Of the LET-dependent up-regulated genes, OsPARP3 and OsPCNA were identified, which are involved in DNA repair pathways. This indicates that the Ku-independent alternative non-homologous end-joining pathway may contribute to repairing complex DNA legions induced by high-LET irradiation. These findings may clarify various LET-dependent responses in rice.

Ion beam techniques for analyzing polymers irradiated by ions

International Nuclear Information System (INIS)

Rickards, J.; Zironi, E.P.; Andrade, E.; Dominguez, B.

1992-01-01

In the study of the effects of ion beam irradiation of polymers very large doses can be administered in short times. Thousands of MGy can be produced in a small volume of a sample in a few minutes by bombarding with typical ion beam currents. For instance, in an experiment done to observe the effects of 750 keV proton irradiation PVC, using a collimator of 1 mm diameter, 1 μC of charge integration deposits a dose of 50 MGy. The use of ion beams also opens up the possibility of using the same beam for irradiation and for analysis of the effects, using the well known ion beam analysis techniques. PIXE allows the measurement of chlorine in PVC. Polymers containing fluorine can be measured with the resonant nuclear reaction (RNR) technique, which is specific only to certain elements. The amount of hydrogen in the sample and its profile can be obtained using energy recoil detection analysis (ERDA); carbon, oxygen, and nitrogen can be measured and profiled using Rutherford backscattering (RBS) and also using the (d,p) and (d, α) nuclear reactions (NR). Loss of mass is one effect that can be studied using these techniques. It was studied in two different polymers, PVC and CR-39, in order to determine carbon buildup during ion irradiation. It was concluded that carbon builds up following different mechanisms in these two materials, due to the different possibilities of forming volatile compounds. It is also suggested that CR-39 should be a good material for ion beam lithography. (author)

The Marshall Space Flight Center Low-Energy Ion Facility: a preliminary report

International Nuclear Information System (INIS)

Biddle, A.P.; Reynolds, J.W.; Chisholm, W.L. Jr.; Hunt, R.D.

1983-10-01

The Low-Energy Ion Facility (LEIF) is designed for laboratory research of low-energy ion beams similar to those present in the magnetosphere. In addition, it provides the ability to develop and calibrate low-energy, less than 50 eV, plasma instrumentation over its full range of energy, mass, flux, and arrival angle. The current status of this evolving resource is described. It also provides necessary information to allow users to utilize it most efficiently

Construction plan of ion irradiation facility in JAERI

International Nuclear Information System (INIS)

Tanaka, Ryuichi

1987-01-01

The Takasaki Radiation Chemistry Research Establishment of Japan Atomic Energy Research Institute (JAERI) started the construction of an ion irradiation facility to apply ion beam to the research and development of radiation resistant materials for severe environment, the research on biotechnology and new functional materials. This project was planned as ion beam irradiation becomes an effective means for the research on fundamental physics and advanced technology, and the national guideline recently emphasizes the basic and pioneering field in research and development. This facility comprises an AVF cyclotron with an ECR ion source (maximum proton energy: 90 MeV), a 3 MV tandem accelerator, a 3 MV single end type Van de Graaf accelerator and a 400 kV ion implanter. In this report, the present status of planning the accelerators and the facility to be constructed, the outline of research plan, the features of the accelerators, and the beam characteristics are described. In this project, the research items are divided into the materials for space environment, the materials for nuclear fusion reactors, biotechnology, new functional materials, and ion beam technology. The ion beams required for the facility are microbeam, pulsed beam, multiple beam, neutron beam and an expanded irradiation field. (Kako, I.)

Secondary particle tracks generated by ion beam irradiation

Science.gov (United States)

García, Gustavo

2015-05-01

The Low Energy Particle Track Simulation (LEPTS) procedure is a powerful complementary tool to include the effect of low energy electrons and positrons in medical applications of radiation. In particular, for ion-beam cancer treatments provides a detailed description of the role of the secondary electrons abundantly generated around the Bragg peak as well as the possibility of using transmuted positron emitters (C11, O15) as a complement for ion-beam dosimetry. In this study we present interaction probability data derived from IAM-SCAR corrective factors for liquid environments. Using these data, single electron and positron tracks in liquid water and pyrimidine have been simulated providing information about energy deposition as well as the number and type of interactions taking place in any selected ``nanovolume'' of the irradiated area. In collaboration with Francisco Blanco, Universidad Complutense de Madrid; Antonio Mu noz, Centro de Investigaciones Energéticas Medioambientales y Tecnológicas and Diogo Almeida, Filipe Ferreira da Silva, Paulo Lim ao-Vieira, Universidade Nova de Lisboa. Supported by the Spanish and Portuguese governments.

Research into releasing inorganic phosphate and base from 5'-dTMP irradiated by a low energy ion beam

International Nuclear Information System (INIS)

Shao Chunlin; Yu Zengliang

1994-01-01

Research into radiation damage of nucleotide is an important area in radiation biology. In this paper, the yield of inorganic phosphate and base released from 5'-dTMP irradiated by a 30 keV N + ion beam was investigated in several aspects. The effect of particle fluence on yield and the influence of treatment with 0.1 N NaOH was deduced. By analysis, it is known that the alkali treatment not only increases the yield of inorganic phosphate, but also damages and splits the base released from irradiated 5'-dTMP. When the irradiated samples are treated by 0.1 N NaOH immediately, the yield of inorganic phosphate is increased by a factor of 1.7 and the concentration of base decreased to half of the original value. But the yield of inorganic phosphate could be increased by a factor of 2.8 after 40 min of alkali treatment. On the other hand, when 5'dTMP was irradiated by the ion beam, the G(Pi) obtained was above 0.44, higher than with γ-radiation. (Author)

Electron-ion recombination at low energy

International Nuclear Information System (INIS)

Andersen, L.H.

1993-01-01

The work is based on results obtained with a merged-beams experiment. A beam of electronics with a well characterized density and energy distribution was merged with a fast, monoenergetic ion beam. Results have been obtained for radiative recombination and dielectronic recombination at low relative energies (0 to ∼70eV). The obtained energy resolution was improved by about a factor of 30. High vacuum technology was used to suppress interactions with electrons from the environments. The velocity distribution of the electron beam was determined. State-selective dielectronic-recombination measurements were performable. Recombination processes were studied. The theoretical background for radiative recombination and Kramers' theory are reviewed. The quantum mechanical result and its relation to the semiclassical theory is discussed. Radiative recombination was also measured with several different non-bare ions, and the applicability of the semiclassical theory to non-bare ions was investigated. The use of an effective charge is discussed. For dielectronic recombination, the standard theoretical approach in the isolated resonance and independent-processes approximation is debated. The applicability of this method was tested. The theory was able to reproduce most of the experimental data except when the recombination process was sensitive to couplings between different electronic configurations. The influence of external perturbing electrostatic fields is discussed. (AB) (31 refs.)

Measurement of ion energy by a calorimetric method

Energy Technology Data Exchange (ETDEWEB)

Mizuhashi, Kiyoshi; Tajima, Satoshi [Japan Atomic Energy Research Inst., Takasaki, Gunma (Japan). Takasaki Radiation Chemistry Research Establishment; Bunak, Suwat

1996-12-01

In calorimetric method, ion energy is determined based on the temperature changes during radiation of an absorbing material, radiation current and heat capacity of the calorimeter. This method is convenient and its measuring procedures are simple as well as the measuring apparatus. Here, the temperature changes of the calorimeter during {sup 14}N ion beam radiation were determined. The temperature increased linearly when irradiated with {sup 14}N{sup 3+}, 8.3 MeV or {sup 14}N{sup 2+}, 6 MeV, but not linearly for {sup 14}N{sup 1+}, 3.6 MeV, resulting in a comparatively large error. Thus, the measurement of ion energy by calorimetric method was found available as a convenient method for an accelerator having an energy stability less than 10{sup -3}. Especially this method seems to be useful for low-energy ion accelerator or ion injecting apparatus. (M.N.)

LET effects of high energy ion beam irradiation on polysilanes

Energy Technology Data Exchange (ETDEWEB)

Seki, Shu; Kanzaki, Kenichi; Tagawa, Seiichi; Yoshida, Yoichi [Osaka Univ., Ibaraki (Japan). Inst. of Scientific and Industrial Research; Kudoh, Hisaaki; Sugimoto, Masaki; Sasuga, Tsuneo; Seguchi, Tadao; Shibata, Hiromi

1997-03-01

Thin films of poly(di-n-hexylsilane) were irradiated with 2-20 MeV H{sup +} and He{sup +} ion beams. The beams caused heterogeneous reactions of crosslinking and main chain scission in the films. The relative efficiency of the crosslinking was drastically changed in comparison with that of main chain scission. The anomalous change in the molecular weight distribution was analyzed with increasing irradiation fluence, and the ion beam induced reaction radius; track radius was determined for the radiation sources by the function of molecular weight dispersion. Obtained values were 59{+-}15 A and 14{+-}6 A for 2 MeV He{sup +} and 20 MeV H{sup +} ion beams respectively. (author)

AFM studies on heavy ion irradiated YBCO single crystals

International Nuclear Information System (INIS)

Lakhani, Archana; Marhas, M.K.; Saravanan, P.; Ganesan, V.; Srinivasan, R.; Kanjilal, D.; Mehta, G.K.; Elizabeth, Suja; Bhat, H.L.

2000-01-01

Atomic Force Microscopy (AFM) is extensively used to characterise the surface morphology of high energy ion irradiated single crystals of high temperature superconductor - YBCO. Our earlier systematic studies on thin films of YBCO under high energy and heavy ion irradiation shows clear evidence of ion induced sputtering or erosion, even though the effect is more on the grain boundaries. These earlier results were supported by electrical resistance measurements. In order to understand more clearly, the nature of surface modification at these high energies, AFM studies were carried out on single crystals of YBCO. Single crystals were chosen in order to see the effect on crystallites alone without interference from grain boundaries. 200 MeV gold ions were used for investigation using the facilities available at Nuclear Science Centre, New Delhi. The type of ion and the range of energies were chosen to meet the threshold for electronically mediated defect production. The results are in conformity with our earlier studies and will be described in detail in the context of electronic energy loss mediated sputtering or erosion. (author)

Channeling effect for low energy ion implantation in Si

International Nuclear Information System (INIS)

Cho, K.; Allen, W.R.; Finstad, T.G.; Chu, W.K.; Liu, J.; Wortman, J.J.

1985-01-01

Ion implantation is one of the most important processes in semiconductor device fabrication. Due to the crystalline nature of Si, channeling of implanted ions occurs during this process. Modern devices become smaller and shallower and therefore require ion implantation at lower energies. The effect of channeling on ion implantation becomes a significant problem for low energy ion implantation. The critical angle for axial and planar channeling increases with decreasing energy. This corresponds to an increased probability for channeling with lowering of ion energy. The industry approach to avoid the channeling problem is to employ a tilt angle of 7 0 between the ion implantation direction and the surface normal. We approach the problem by mapping major crystalline axes and planes near the [100] surface normal. Our analysis indicates that a 7 0 tilt is not an optimum selection in channeling reduction. Tilt angles in the range 5 0 to 6 0 combined with 7 0 +- 0.5 0 rotation from the (100) plane are better selections for the reduction of the channeling effect. The range of suitable angles is a function of the implantation energy. Implantations of boron along well specified crystallographic directions have been carried out by careful alignment and the resulting boron profiles measured by SIMS. (orig.)

A Study of Mutation Breeding of High-Yielding Tryptophanase Escherichia coli by Low-Energy N+ Ion Beam Implantation

International Nuclear Information System (INIS)

Pang Min; Yao Jianming; Wang Dongmei

2009-01-01

Low energy ion beam has been widely applied in microbe breeding, plant breeding, gene transfer and cell modification. In this study, the Escherichia coli (E.coli) strain producing tryptophanase was irradiated by a low energy nitrogen ion beam with an energy of 10 keV at a fluence of 13 x 10 14 N + /cm 2 when glycerin at a 15% concentration was used as a protector. The effect on the biomass of E. coli after N + implantation was analyzed in detail by statistic methods. The screening methods used in this study were proven to be effective. After continuous mutagenicity, a high-yield tryptophanase strain was selected and both its biomass and enzymatic activity were higher than those of the parent strain. The results of scale-up production showed that the biomass could reach wet weight 8.2 g/L and 110 g L-tryptophan could be formed in the volume of the 1l enzymatic reaction system.

Ionic conduction in 70-MeV C5+-ion-irradiated poly(vinylidenefluoride- co-hexafluoropropylene)-based gel polymer electrolytes

International Nuclear Information System (INIS)

Saikia, D.; Kumar, A.; Singh, F.; Avasthi, D.K.; Mishra, N.C.

2005-01-01

In an attempt to increase the Li + -ion diffusivity, poly(vinylidenefluoride-co-hexafluoropropylene)-(propylene carbonate+diethyl carbonate)-lithium perchlorate gel polymer electrolyte system has been irradiated with 70-MeV C 5+ -ion beam of nine different fluences. Swift heavy-ion irradiation shows enhancement in ionic conductivity at lower fluences and decrease in ionic conductivity at higher fluences with respect to unirradiated gel polymer electrolyte films. Maximum room-temperature (303 K) ionic conductivity is found to be 2x10 -2 S/cm after irradiation with a fluence of 10 11 ions/cm 2 . This interesting result could be attributed to the fact that for a particular ion beam with a given energy, a higher fluence provides critical activation energy for cross linking and crystallization to occur, which results in the decrease in ionic conductivity. X-ray-diffraction results show decrease in the degree of crystallinity upon ion irradiation at low fluences (≤10 11 ions/cm 2 ) and increase in crystallinity at higher fluences (>10 11 ions/cm 2 ). Analysis of Fourier-transform infrared spectroscopy results suggests the bond breaking at a fluence of 5x10 9 ions/cm 2 and cross linking at a fluence of 10 12 ions/cm 2 and corroborate conductivity and x-ray-diffraction results. Scanning electron micrographs exhibit increased porosity of the polymer electrolyte after ion irradiation

Inverted end-Hall-type low-energy high-current gaseous ion source

International Nuclear Information System (INIS)

Oks, E. M.; Vizir, A. V.; Shandrikov, M. V.; Yushkov, G. Yu.; Grishin, D. M.; Anders, A.; Baldwin, D. A.

2008-01-01

A novel approach to low-energy, high-current, gaseous ion beam generation was explored and an ion source based on this technique has been developed. The source utilizes a dc high-current (up to 20 A) gaseous discharge with electron injection into the region of ion generation. Compared to the conventional end-Hall ion source, the locations of the discharge anode and cathode are inverted: the cathode is placed inside the source and the anode outside, and correspondingly, the discharge current is in the opposite direction. The discharge operates in a diverging axial magnetic field, similar to the end-Hall source. Electron generation and injection is accomplished by using an additional arc discharge with a ''cold'' (filamentless) hollow cathode. Low plasma contamination is achieved by using a low discharge voltage (avoidance of sputtering), as well as by a special geometric configuration of the emitter discharge electrodes, thereby filtering (removing) the erosion products stemming from the emitter cathode. The device produces a dc ion flow with energy below 20 eV and current up to 2.5 A onto a collector of 500 cm 2 at 25 cm from the source edge, at a pressure ≥0.02 Pa and gas flow rate ≥14 SCCM. The ion energy spread is 2 to 3 eV (rms). The source is characterized by high reliability, low maintenance, and long lifetime. The beam contains less than 0.1% of metallic ions. The specific electric energy consumption is 400 eV per ion registered at the collector. The source operates with noble gases, nitrogen, oxygen, and hydrocarbons. Utilizing biasing, it can be used for plasma sputtering, etching, and other ion technologies

Surface structure of Cr0.5 Ti0.5N coatings after heavy ions irradiation and annealing

International Nuclear Information System (INIS)

Kislitsin, Sergey; Gorlachev, Igor; Uglov, Vladimir

2015-01-01

Results of surface structure investigations of TiCrN coating on carbon steel after irradiation by helium, krypton and xenon heavy ions are reported in the present publication. The series of Cr50Ti50N coatings on carbon steel with thickness of 50,..., 300 nm were formed by vacuum arc deposition techniques. Specimens with TiCrN coating on carbon steel were irradiated by low energy 4 He +1 (22 keV) and 4 He +2 (40 keV) ions and high energy Xe +18 and Kr +14 ions with energy of 1.5 MeV/nucleon. Fluence of He ions was 1.0x10 17 ion.cm -2 , fluence of Xe and Kr ions was 5x10 14 -1.0x10 15 ion.cm -2 , irradiation temperature did not exceed 150 deg. C. Study of surface structure was performed by scanning electron microscopy (SEM) and atomic force microscopy (AFM). Methods of Roentgen diffractometry and Rutherford backscattering was applied for determination of structure and thickness of coating. In case of irradiation with Xe +18 and Kr +14 ions an investigation of surface morphology and structure was done after successive two hours vacuum annealing of irradiated samples at temperatures 400 deg. C, 500 deg. C and 600 deg. C. It was shown that after irradiation by Xe and Kr ions on the surface of coating convexities appear, surface density of which correlates with ion flux. In the case of Xe, ions irradiation generated convexities of spherical and elongated shape with dimensions ranging from ten to hundreds nm. In the case of Kr ions, only spherical globules were generated, dimensions of which are 10-30 nm. The most likely explanation of observed surface damage is that: convexities on the surface are generated at ion bombardment of specimens with coating. Convexities are the traces of ions passing through coating and they are due to structural reconstruction at energy release along a trajectory of ions braking. Convexities of elongated shape represent overlapping traces from two passing ions. When the projective range of Xe and Kr ions exceeds coating thickness, damage

Synthesis of Fe–C{sub 60} complex by ion irradiation

Energy Technology Data Exchange (ETDEWEB)

Minezaki, Hidekazu, E-mail: dn1000012@toyo.jp [Graduate School of Engineering, Toyo University, 2100 Kujirai, Kawagoe, Saitama 350-8585 (Japan); Oshima, Kosuke [Graduate School of Engineering, Toyo University, 2100 Kujirai, Kawagoe, Saitama 350-8585 (Japan); Uchida, Takashi; Mizuki, Toru [Bio-Nano Electronics Research Centre, Toyo University, 2100 Kujirai, Kawagoe, Saitama 350-8585 (Japan); Racz, Richard [Institute of Nuclear Research (ATOMKI), H-4026, Debrecen, Bem tér 18/C (Hungary); Muramatsu, Masayuki [National Institute of Radiological Sciences (NIRS), 4-9-1 Anagawa, Inage-ku, Chiba-shi, Chiba 263-8555 (Japan); Asaji, Toyohisa [Oshima National College of Maritime Technology, 1091-1 Komatsu Suou Oshima City, Oshima, Yamaguchi 742-2193 (Japan); Kitagawa, Atsushi [National Institute of Radiological Sciences (NIRS), 4-9-1 Anagawa, Inage-ku, Chiba-shi, Chiba 263-8555 (Japan); Kato, Yushi [Graduate School of Engineering, Osaka University, 2-1 Yamada-oka, Suita-shi, Osaka 565-0871 (Japan); Biri, Sandor [Institute of Nuclear Research (ATOMKI), H-4026, Debrecen, Bem tér 18/C (Hungary); Yoshida, Yoshikazu [Graduate School of Engineering, Toyo University, 2100 Kujirai, Kawagoe, Saitama 350-8585 (Japan); Bio-Nano Electronics Research Centre, Toyo University, 2100 Kujirai, Kawagoe, Saitama 350-8585 (Japan)

2013-09-01

Highlights: •The Fe{sup +} beam was irradiated to the C{sub 60} thin films. •The Fe{sup +}-irradiated C{sub 60} thin films were analyzed by LDI-TOF-MS and by HPLC. •The peak with mass/charge of 776 was observed in the Fe{sup +}-irradiated C{sub 60} thin film. •We could synthesize the Fe–C{sub 60} complex as a new material. -- Abstract: In order to synthesize the Fe@C{sub 60} complex, iron ion beam irradiated to C{sub 60} thin films. The energy of the irradiated iron ions was controlled from 50 eV to 250 eV. The dose of that was controlled from 6.67 × 10{sup 12} to 6.67 × 10{sup 14} ions/cm{sup 2}. By the analysis of the surface of the iron ion irradiated C{sub 60} thin films using laser desorption/ionization time-of-flight mass spectrometry, we could confirm the peak with mass/charge of 776. The mass/charge of 776 corresponds to Fe + C{sub 60}. We obtained the maximum intensity of the peak with mass/charge of 776 under the irradiation iron ion energy and the dose were 50 eV and 3.30 × 10{sup 13} ions/cm{sup 2}, respectively. Then, the separation of the material with mass of 776 was performed by using high performance liquid chromatography. We could separate the Fe + C{sub 60} from the iron ion irradiated C{sub 60} thin film. As a result, we could synthesize the Fe + C{sub 60} complex as a new material.

Revealing ionization-induced dynamic recovery in ion-irradiated SrTiO₃

Energy Technology Data Exchange (ETDEWEB)

Velisa, Gihan [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Materials Science & Technology Division; Wendler, Elke [Friedrich Schiller Univ., Jena (Germany). Institut fur Festkorperphysik; Xue, Haizhou [Univ. of Tennessee, Knoxville, TN (United States). Dept. of Materials Science & Engineering; Zhang, Yanwen [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Materials Science & Technology Division; Univ. of Tennessee, Knoxville, TN (United States). Dept. of Materials Science & Engineering; Weber, William J. [Univ. of Tennessee, Knoxville, TN (United States). Dept. of Materials Science & Engineering; Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Materials Science & Technology Division

2018-03-02

The lack of fundamental understanding on the coupled effects of energy deposition to electrons and atomic nuclei on defect processes and irradiation response poses a significant roadblock for the design and control of material properties. In this work, SrTiO₃ has been irradiated with various ion species over a wide range of ion fluences at room temperature with a goal to deposit different amounts of energy to target electrons and atomic nuclei by varying the ratio of electronic to nuclear energy loss. Here, the results unambiguously show a dramatic difference in behavior of SrTiO₃ irradiated with light ions (Ne, O) compared to heavy ions (Ar). While the damage accumulation and amorphization under Ar ion irradiation are consistent with previous observations and existing models, the damage accumulation under Ne irradiation reveals a quasi-saturation state at a fractional disorder of 0.54 at the damage peak for an ion fluence corresponding to a dose of 0.5 dpa; this is followed by further increases in disorder with increasing ion fluence. In the case of O ion irradiation, the damage accumulation at the damage peak closely follows that for Ne ion irradiation up to a fluence corresponding to a dose of 0.5 dpa, where a quasi-saturation of fractional disorder level occurs at about 0.48; however, in this case, the disorder at the damage peak decreases slightly with further increases in fluence. This behavior is associated with changes in kinetics due to irradiation-enhanced diffusional processes that are dependent on electronic energy loss and the ratio of electronic to nuclear energy dissipation. Lastly, these findings are critical for advancing the fundamental understanding of ion-solid interactions and for a large number of applications in oxide electronics where SrTiO₃ is a foundational material.

Damage induced in semiconductors by swift heavy ion irradiation

International Nuclear Information System (INIS)

Levalois, M.; Marie, P.

1999-01-01

The behaviour of semiconductors under swift heavy ion irradiation is different from that of metals or insulators: no spectacular effect induced by the inelastic energy loss has been reported in these materials. We present here a review of irradiation effects in the usual semiconductors (silicon, germanium and gallium arsenide). The damage is investigated by means of electrical measurements. The usual mechanisms of point defect creation can account for the experimental results. Besides, some results obtained on the wide gap semiconductor silicon carbide are reported. Concerning the irradiation effects induced by heavy ions in particle detectors, based on silicon substrate, we show that the deterioration of the detector performances can be explained from the knowledge of the substrate properties which are strongly perturbed after high doses of irradiation. Finally, some future ways of investigation are proposed. The silicon substrate is a good example to compare the irradiation effects with different particles such as electrons, neutrons and heavy ions. It is then necessary to use parameters which account for the local energy deposition, in order to describe the damage in the material

Microstructural evolution in low alloy steels under high dose ion irradiation

International Nuclear Information System (INIS)

Fujii, Katsuhiko; Fukuya, Koji; Ohkubo, Tadakatsu; Hono, Kazuhiro

2006-01-01

Radiation hardening and microstructural evolution in low Cu A533B steels (0.03 wt% Cu) irradiated by 3 MeV Ni 2+ ions at 290degC to 1 dpa were investigated by ultra-micro hardness measurement and leaser type three dimensional atom probe analysis. Mn-Ni-Si enriched precipitates were detected in the samples irradiated to 1 dpa by 3DAP analysis. The well-defined precipitates had a size of less than 4 nm, and the number density increased with dose. The formation of the precipitates under high dose rate irradiation suggested that Mn-Ni-Si enriched precipitates were formed by a process such as radiation induced precipitation rather than by thermal equilibrium process. The increase of yield stress calculated by size and number density of the precipitates in 1 dpa irradiated sample using the similar value of hardening efficiency to that of Cu rich precipitates was consistent with that estimated by data of increases of hardness measured by nano-indentation. The result indicates that effects of Mn-Ni-Si enriched precipitates on radiation embrittlement are similar to those of Cu rich precipitates. (author)

Low-energy electron irradiation induced top-surface nanocrystallization of amorphous carbon film

Science.gov (United States)

Chen, Cheng; Fan, Xue; Diao, Dongfeng

2016-10-01

We report a low-energy electron irradiation method to nanocrystallize the top-surface of amorphous carbon film in electron cyclotron resonance plasma system. The nanostructure evolution of the carbon film as a function of electron irradiation density and time was examined by transmission electron microscope (TEM) and Raman spectroscopy. The results showed that the electron irradiation gave rise to the formation of sp2 nanocrystallites in the film top-surface within 4 nm thickness. The formation of sp2 nanocrystallite was ascribed to the inelastic electron scattering in the top-surface of carbon film. The frictional property of low-energy electron irradiated film was measured by a pin-on-disk tribometer. The sp2 nanocrystallized top-surface induced a lower friction coefficient than that of the original pure amorphous film. This method enables a convenient nanocrystallization of amorphous surface.

Radioprotective effects of melatonin on carbon-ion and X ray irradiation in mice

International Nuclear Information System (INIS)

Saito, Masayoshi; Kawata, Tetsuya; Liu, C.; Sakurai, Akiko; Ito, Hisao; Ando, Koichi

2004-01-01

The radioprotective ability of melatonin was investigated in C3H mice irradiated to a whole-body X-ray (150 Kv, 20 mA) and carbon-ion (290 MeV/u). Mice exposed to X-ray, 13 KeV/μm and 50 KeV/μm carbon-ion dose of 7.0-7.5 Gy, 6.5-7.25 Gy and 6.0-6.5 Gy, respectively. One hour before the irradiation, mice were given an intraperitoneal injection of 0.2 ml of either solvent (soybean oil) or melatonin (250 mg/kg, uniform suspension in soybean oil). Mice were observed for mortality over a period of 30 days following irradiation. Results obtained the first year are as follows. The toxicity of melatonin (at a dose 250 mg/kg) intraperitoneal administered to mice could not be observed. A pretreatment of melatonin is effective in protecting mice from lethal damage of low-linear energy transfer (LET) irradiation (X-ray and 13 KeV/μm carbon-ion). In the high-LET irradiated mice with 50 KeV/μm carbon-ion, melatonin exhibited a slight increase in their survival. (author)

Temperature and ion-mass dependence of amorphization dose for ion beam irradiated zircon (ZrSiO4)

International Nuclear Information System (INIS)

Wang, L.M.; Ewing, R.C.; Eby, R.K.

1992-12-01

The temperature dependence of amorphization dose for zircon under 1.5 MeV Kr ion irradiation has been investigated using the ANL HVEM-Tandem Facility. Three regimes were observed in the amorphization dose-temperature curve. In the first regime (15 to 300 K), the critical amorphization dose increased from 3.06 to 4.5 ions/nm 2 . In the second regime (300 to 473 K), there is little change in the amorphizationdose. In the third regime (> 473 K), the amorphization dose increased exponentially to 8.3 ions/nm 2 at 913 K. This temperature dependence of amorphization dose can be described by two processes with different activation energies (0.018 and 0.31 eV respectively) which are attributed to close pair recombination in the cascades at low temperatures and radiation-enhanced epitaxial recrystallization at higher temperatures. The upper temperature limit for amorphization of zircon is estimated to be 1100 K. The ion-mass dependence of the amorphization dose (in dpa) has also been discussed in terms of the energy to recoils based on data obtained from He, Ne, Ar, Kr, Xe irradiations and a 238 Pu-doped sample

A study of defect cluster formation in vanadium by heavy ion irradiation

Energy Technology Data Exchange (ETDEWEB)

Sekimura, Naoto; Shirao, Yasuyuki; Morishita, Kazunori [Tokyo Univ. (Japan)

1996-10-01

Formation of defect clusters in thin foils of vanadium was investigated by heavy ion irradiation. In the very thin region of the specimens less than 20 nm, vacancy clusters were formed under gold ion irradiation, while very few clusters were detected in the specimens irradiated with 200 and 400 keV self-ions up to 1 x 10{sup 16} ions/m{sup 2}. The density of vacancy clusters were found to be strongly dependent on ion energy. Only above the critical value of kinetic energy transfer density in vanadium, vacancy clusters are considered to be formed in the cascade damage from which interstitials can escape to the specimen surface in the very thin region. (author)

Si-nanoparticle synthesis using ion implantation and MeV ion irradiation

Energy Technology Data Exchange (ETDEWEB)

Chulapakorn, T.; Wolff, M.; Primetzhofer, D.; Possnert, G. [Uppsala University, Department of Physics and Astronomy, P.O. Box 516, 751 20 Uppsala (Sweden); Sychugov, I.; Suvanam, S.S.; Linnros, J. [Royal Institute of Technology, School of Information and Communication Technology, P.O. Box Electrum 229, 164 40 Kista (Sweden); Hallen, A. [Uppsala University, Department of Physics and Astronomy, P.O. Box 516, 751 20 Uppsala (Sweden); Royal Institute of Technology, School of Information and Communication Technology, P.O. Box Electrum 229, 164 40 Kista (Sweden)

2015-12-15

A dielectric matrix with embedded Si-nanoparticles may show strong luminescence depending on nanoparticles size, surface properties, Si-excess concentration and matrix type. Ion implantation of Si ions with energies of a few tens to hundreds of keV in a SiO{sub 2} matrix followed by thermal annealing was identified as a powerful method to form such nanoparticles. The aim of the present work is to optimize the synthesis of Si-nanoparticles produced by ion implantation in SiO{sub 2} by employing MeV ion irradiation as an additional annealing process. The luminescence properties are measured by spectrally resolved photoluminescence including PL lifetime measurement, while X-ray reflectometry, atomic force microscopy and ion beam analysis are used to characterize the nanoparticle formation process. The results show that the samples implanted at 20%-Si excess atomic concentration display the highest luminescence and that irradiation of 36 MeV {sup 127}I ions affects the luminosity in terms of wavelength and intensity. It is also demonstrated that the nanoparticle luminescence lifetime decreases as a function of irradiation fluence. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Levels of 2-dodecylcyclobutanone in ground beef patties irradiated by low-energy X-ray and gamma rays.

Science.gov (United States)

Hijaz, Faraj M; Smith, J Scott

2010-01-01

Food irradiation improves food safety and maintains food quality by controlling microorganisms and extending shelf life. However, acceptance and commercial adoption of food irradiation is still low. Consumer groups such as Public Citizen and the Food and Water Watch have opposed irradiation because of the formation of 2-alkylcyclobutanones (2-ACBs) in irradiated, lipid-containing foods. The objectives of this study were to measure and to compare the level of 2-dodecylcyclobutanone (2-DCB) in ground beef irradiated by low-energy X-rays and gamma rays. Beef patties were irradiated by low-energy X-rays and gamma rays (Cs-137) at 3 targeted absorbed doses of 1.5, 3.0, and 5.0 kGy. The samples were extracted with n-hexane using a Soxhlet apparatus, and the 2-DCB concentration was determined with gas chromatography-mass spectrometry. The 2-DCB concentration increased linearly (P irradiation dose for gamma-ray and low-energy X-ray irradiated patties. There was no significant difference in 2-DCB concentration between gamma-ray and low-energy X-ray irradiated patties (P > 0.05) at all targeted doses. © 2010 Institute of Food Technologists®

Ion-channeling analysis of As relocation in heavily doped Si:As irradiated with high-energy ions

International Nuclear Information System (INIS)

Lulli, G.; Albertazzi, E.; Bianconi, M.; Ferri, M.

2003-01-01

Silicon on insulator layers doped with 8x10 20 As cm -3 and thermally equilibrated at 1100 deg. C, have been irradiated with 2 MeV Si + ions. Rutherford backscattering-channeling analysis shows an increase in As disorder upon irradiation significantly larger than the increase in Si disorder, while electrical measurements show a large decrease in electrical activation. Monte Carlo simulation of channeling angular scans suggests that the enhanced As disorder effect is due to the preferential relocation of dopant atoms slightly displaced from lattice sites, which appear the main reason responsible for the electrical deactivation in the unirradiated sample and are believed to be in the form of As-vacancy clusters. Upon 600 deg. C 15 s annealing, the As atoms randomly relocated by ion irradiation almost completely recover their original configuration, probably capturing vacancies and forming, again, the complexes dissociated by ion irradiation

Effect of ion beam irradiation on the structure of ZnO films deposited by a dc arc plasmatron.

Science.gov (United States)

Penkov, Oleksiy V; Lee, Heon-Ju; Plaksin, Vadim Yu; Ko, Min Gook; Joa, Sang Beom; Yim, Chan Joo

2008-02-01

The deposition of polycrystalline ZnO film on a cold substrate was performed by using a plasmatron in rough vacuum condition. Low energy oxygen ion beam generated by a cold cathode ion source was introduced during the deposition process. The change of film property on the ion beam energy was checked. It is shown that irradiation by 200 eV ions improves crystalline structure of the film. Increasing of ion beam energy up to 400 eV leads to the degradation of a crystalline structure and decreases the deposition rate.

Ion irradiation to simulate neutron irradiation in model graphites: Consequences for nuclear graphite

Science.gov (United States)

Galy, N.; Toulhoat, N.; Moncoffre, N.; Pipon, Y.; Bérerd, N.; Ammar, M. R.; Simon, P.; Deldicque, D.; Sainsot, P.

2017-10-01

Due to its excellent moderator and reflector qualities, graphite was used in CO2-cooled nuclear reactors such as UNGG (Uranium Naturel-Graphite-Gaz). Neutron irradiation of graphite resulted in the production of 14C which is a key issue radionuclide for the management of the irradiated graphite waste. In order to elucidate the impact of neutron irradiation on 14C behavior, we carried out a systematic investigation of irradiation and its synergistic effects with temperature in Highly Oriented Pyrolitic Graphite (HOPG) model graphite used to simulate the coke grains of nuclear graphite. We used 13C implantation in order to simulate 14C displaced from its original structural site through recoil. The collision of the impinging neutrons with the graphite matrix carbon atoms induces mainly ballistic damage. However, a part of the recoil carbon atom energy is also transferred to the graphite lattice through electronic excitation. The effects of the different irradiation regimes in synergy with temperature were simulated using ion irradiation by varying Sn(nuclear)/Se(electronic) stopping power. Thus, the samples were irradiated with different ions of different energies. The structure modifications were followed by High Resolution Transmission Electron Microscopy (HRTEM) and Raman microspectrometry. The results show that temperature generally counteracts the disordering effects of irradiation but the achieved reordering level strongly depends on the initial structural state of the graphite matrix. Thus, extrapolating to reactor conditions, for an initially highly disordered structure, irradiation at reactor temperatures (200 - 500 °C) should induce almost no change of the initial structure. On the contrary, when the structure is initially less disordered, there should be a "zoning" of the reordering: In "cold" high flux irradiated zones where the ballistic damage is important, the structure should be poorly reordered; In "hot" low flux irradiated zones where the ballistic

Radiation hardening of metals irradiated by heavy ions

International Nuclear Information System (INIS)

Didyk, A.Yu.; Skuratov, V.A.; Mikhajlova, N.Yu.; Regel', V.R.

1988-01-01

The damage dose dependence in the 10 -4 -10 -2 dpa region of radiation hardening of Al, V, Ni, Cu irradiated by xenon ions with 124 MeV energy is investigated using the microhardness technique and transmission electron microscope. It is shown that the pure metals radiation hardening is stimulated for defects clusters with the typical size less than 5 nm, as in the case of neutron and the light charge ion irradiation

Radiation-Induced Epigenetic Alterations after Low and High LET Irradiations

Energy Technology Data Exchange (ETDEWEB)

Aypar, Umut; Morgan, William F.; Baulch, Janet E.

2011-02-01

Epigenetics, including DNA methylation and microRNA (miRNA) expression, could be the missing link in understanding the delayed, non-targeted effects of radiation including radiationinduced genomic instability (RIGI). This study tests the hypothesis that irradiation induces epigenetic aberrations, which could eventually lead to RIGI, and that the epigenetic aberrations induced by low linear energy transfer (LET) irradiation are different than those induced by high LET irradiations. GM10115 cells were irradiated with low LET x-rays and high LET iron (Fe) ions and evaluated for DNA damage, cell survival and chromosomal instability. The cells were also evaluated for specific locus methylation of nuclear factor-kappa B (NFκB), tumor suppressor in lung cancer 1 (TSLC1) and cadherin 1 (CDH1) gene promoter regions, long interspersed nuclear element 1 (LINE-1) and Alu repeat element methylation, CpG and non-CpG global methylation and miRNA expression levels. Irradiated cells showed increased micronucleus induction and cell killing immediately following exposure, but were chromosomally stable at delayed times post-irradiation. At this same delayed time, alterations in repeat element and global DNA methylation and miRNA expression were observed. Analyses of DNA methylation predominantly showed hypomethylation, however hypermethylation was also observed. MiRNA shown to be altered in expression level after x-ray irradiation are involved in chromatin remodeling and DNA methylation. Different and higher incidence of epigenetic changes were observed after exposure to low LET x-rays than high LET Fe ions even though Fe ions elicited more chromosomal damage and cell killing. This study also shows that the irradiated cells acquire epigenetic changes even though they are chromosomally stable suggesting that epigenetic aberrations may arise in the cell without initiating RIGI.

Pattern formation on Ge by low energy ion beam erosion

International Nuclear Information System (INIS)

Teichmann, Marc; Lorbeer, Jan; Frost, Frank; Rauschenbach, Bernd; Ziberi, Bashkim

2013-01-01

Modification of nanoscale surface topography is inherent to low-energy ion beam erosion processes and is one of the most important fields of nanotechnology. In this report a comprehensive study of surface smoothing and self-organized pattern formation on Ge(100) by using different noble gases ion beam erosion is presented. The investigations focus on low ion energies (⩽ 2000 eV) and include the entire range of ion incidence angles. It is found that for ions (Ne, Ar) with masses lower than the mass of the Ge target atoms, no pattern formation occurs and surface smoothing is observed for all angles of ion incidence. In contrast, for erosion with higher mass ions (Kr, Xe), ripple formation starts at incidence angles of about 65° depending on ion energy. At smaller incident angles surface smoothing occurs again. Investigations of the surface dynamics for specific ion incidence angles by changing the ion fluence over two orders of magnitude gives a clear evidence for coarsening and faceting of the surface pattern. Both observations indicate that gradient-dependent sputtering and reflection of primary ions play crucial role in the pattern evolution, just at the lowest accessible fluences. The results are discussed in relation to recently proposed redistributive or stress-induced models for pattern formation. In addition, it is argued that a large angular variation of the sputter yield and reflected primary ions can significantly contribute to pattern formation and evolution as nonlinear and non-local processes as supported by simulation of sputtering and ion reflection. (paper)

Surface amorphization in Al2O3 induced by swift heavy ion irradiation

International Nuclear Information System (INIS)

Okubo, N.; Ishikawa, N.; Sataka, M.; Jitsukawa, S.

2013-01-01

Microstructure in single crystalline Al 2 O 3 developed during irradiation by swift heavy ions has been investigated. The specimens were irradiated by Xe ions with energies from 70 to 160 MeV at ambient temperature. The fluences were in the range from 1.0 × 10 13 to 1.0 × 10 15 ions/cm 2 . After irradiations, X-ray diffractometry (XRD) measurements and cross sectional transmission electron microscope (TEM) observations were conducted. The XRD results indicate that in the initial stage of amorphization in single crystalline Al 2 O 3 , high-density S e causes the formation of new planes and disordering. The new distorted lattice planes formed in the early stage of irradiation around the fluence of 5.0 × 10 13 ions/cm 2 for single crystalline Al 2 O 3 irradiated with 160 MeV-Xe ions. Energy dependence on structural modification was also examined in single crystalline Al 2 O 3 irradiated by swift heavy ions. The XRD results indicate that the swift heavy ion irradiation causes the lattice expansion and the structural modification leading to amorphization progresses above the energy around 100 MeV in this XRD study. The TEM observations demonstrated that amorphization was induced in surface region in single crystalline Al 2 O 3 irradiated by swift heavy ions above the fluence expected from the results of XRD. Obvious boundary was observed in the cross sectional TEM images. The crystal structure of surface region above the boundary was identified to be amorphous and deeper region to be single crystal. The threshold fluence of amorphization was found to be around 1.0 × 10 14 ions/cm 2 in the case over 80 MeV swift heavy ion irradiation and the fluence did not depend on the crystal structures

Surface amorphization in Al2O3 induced by swift heavy ion irradiation

Science.gov (United States)

Okubo, N.; Ishikawa, N.; Sataka, M.; Jitsukawa, S.

2013-11-01

Microstructure in single crystalline Al2O3 developed during irradiation by swift heavy ions has been investigated. The specimens were irradiated by Xe ions with energies from 70 to 160 MeV at ambient temperature. The fluences were in the range from 1.0 × 1013 to 1.0 × 1015 ions/cm2. After irradiations, X-ray diffractometry (XRD) measurements and cross sectional transmission electron microscope (TEM) observations were conducted. The XRD results indicate that in the initial stage of amorphization in single crystalline Al2O3, high-density Se causes the formation of new planes and disordering. The new distorted lattice planes formed in the early stage of irradiation around the fluence of 5.0 × 1013 ions/cm2 for single crystalline Al2O3 irradiated with 160 MeV-Xe ions. Energy dependence on structural modification was also examined in single crystalline Al2O3 irradiated by swift heavy ions. The XRD results indicate that the swift heavy ion irradiation causes the lattice expansion and the structural modification leading to amorphization progresses above the energy around 100 MeV in this XRD study. The TEM observations demonstrated that amorphization was induced in surface region in single crystalline Al2O3 irradiated by swift heavy ions above the fluence expected from the results of XRD. Obvious boundary was observed in the cross sectional TEM images. The crystal structure of surface region above the boundary was identified to be amorphous and deeper region to be single crystal. The threshold fluence of amorphization was found to be around 1.0 × 1014 ions/cm2 in the case over 80 MeV swift heavy ion irradiation and the fluence did not depend on the crystal structures.

In situ and ex situ characterization of the ion-irradiation effects in third generation SiC fibers

International Nuclear Information System (INIS)

Huguet-Garcia, Juan

2015-01-01

The use of third generation SiC fibers, Tyranno SA3 (TSA3) and Hi Nicalon S (HNS), as reinforcement for ceramic composites for nuclear applications requires the characterization of its structural stability and mechanical behavior under irradiation. Regarding the radiation stability, ion-amorphization kinetics of these fibers have been studied and compared to the model material, i.e. 6H-SiC single crystals, with no significant differences. For all samples, full amorphization threshold dose yields ∼0.4 dpa at room temperature and complete amorphization was not achieved for irradiation temperatures over 200 C. Successively, ion-amorphized samples have been thermally annealed. It is reported that thermal annealing at high temperatures not only induces the recrystallization of the ion-amorphized samples but also causes unrecoverable mechanical failure, i.e. cracking and delamination. Cracking is reported to be a thermally driven phenomenon characterized by activation energy of 1.05 eV. Regarding the mechanical irradiation behavior, irradiation creep of TSA3 fibers has been investigated using a tensile device dedicated to in situ tests coupled to two different ion-irradiation lines. It is reported that ion irradiation (12 MeV C 4+ and 92 MeV Xe 23+ ) induces a time-dependent strain under loads where thermal creep is negligible. In addition, irradiation strain is reported to be higher at low irradiation temperatures due to a coupling between irradiation swelling and irradiation creep. At high temperatures, near 1000 C, irradiation swelling is minimized hence allowing the characterization of the irradiation creep. Irradiation creep rate is characterized by a linear correlation between the ion flux and the strain rate and a square root dependence with the applied load. Finally, it has been reported that the higher the electronic energy loss contribution to the stopping regime the higher the irradiation creep of the fiber. (author) [fr

Effect of irradiation temperature on microstructural changes in self-ion irradiated austenitic stainless steel

Science.gov (United States)

Jin, Hyung-Ha; Ko, Eunsol; Lim, Sangyeob; Kwon, Junhyun; Shin, Chansun

2017-09-01

We investigated the microstructural and hardness changes in austenitic stainless steel after Fe ion irradiation at 400, 300, and 200 °C using transmission electron microscopy (TEM) and nanoindentation. The size of the Frank loops increased and the density decreased with increasing irradiation temperature. Radiation-induced segregation (RIS) was detected across high-angle grain boundaries, and the degree of RIS increases with increasing irradiation temperature. Ni-Si clusters were observed using high-resolution TEM in the sample irradiated at 400 °C. The results of this work are compared with the literature data of self-ion and proton irradiation at comparable temperatures and damage levels on stainless steels with a similar material composition with this study. Despite the differences in dose rate, alloy composition and incident ion energy, the irradiation temperature dependence of RIS and the size and density of radiation defects followed the same trends, and were very comparable in magnitude.

Collisions of low-energy multicharged ions

International Nuclear Information System (INIS)

Phaneuf, R.A.; Crandall, D.H.

1981-01-01

Experimental measurements of cross sections for collisions of multiply charged ions with atoms at the lowest attainable collision energies are reported. Emphasis is on electron capture from hydrogen atoms by multiply charged ions at energies below 1 keV/amu. The principal effort is the development of a merged-ion-atom-beams apparatus for studies down to 1 eV/amu relative energy

Measurements of low energy auroral ions

International Nuclear Information System (INIS)

Urban, A.

1981-01-01

This paper summarizes ion measurements in the energy range 0.1 to 30 keV observed during the campaigns 'Substorm Phenomena' and 'Porcupine'. For a clear survey of the physical processes during extraordinary events, sometimes ion measurements of higher energies are also taken into account. Generally, the pitch angle distributions were isotropic during all flights except some remarkable events. In general the ion and electron flux intensities correlated, but sometimes revealed a spectral anti-correlation. Acceleration of the ions by an electrostatic field aligned parallel to the magnetic field could be identified accompanied by intense electron precipitation. On the other hand deceleration of the ions was observed in other field-aligned current sheets which are indicated by the electron and magnetic field measurements. Temporal successive monoenergetic ion variations pointed to energy dispersion and to the location of the source region at 9 Rsub(E). Furthermore, ion fluxes higher than those of the electrons were measured at pitch angles parallel to the magnetic field. The integral down-going number and energy flux of the ions contributed to the total particle or energy influx between 65% and less than 7% and did not clearly characterize the geophysical launch conditions or auroral activities. (author)

Contrast of dry and water-saturated arabidopsis seeds irradiated by MeV energy ions

International Nuclear Information System (INIS)

Mei Tao; Qin Huaili; Xue Jianming; Wang Yugang

2007-01-01

The dry and water-saturated seeds of Arabidopsis thaliana were irradiated by H + ions with 6.5 MeV in atmosphere. The ion fluence used in this experiment was in the range of 4 x 10 9 -1 x 10 14 ions/cm 2 . According to the structure of the seed and TRIM simulation, the ions with the energy of 6.5 MeV can penetrate the whole seed. The experiment shows that the fluence-response curves for the dry seeds and water-saturated seeds had distinct shoulders and reduced rapidly. The experimental results show that the water-imbibed seeds were more sensitive than the dry seeds and the reason is from free radicals reaction. A model has been constructed, and primely simulates the experiment data. (authors)

The use of low energy ion beams for the growth and processing of solid materials

International Nuclear Information System (INIS)

Armour, D.G.; Al-Bayati, A.H.; Gordon, J.S.

1992-01-01

Low energy ion bombardment forms the basis of ion assisted etching and growth of materials in plasma and ion beam systems. The growing demands for low temperature, highly controlled processing has led a rapid increase in both the application of low energy beams and the study of the fundamental ion surface interactions involved. The growth in the practical applications of ion beams in the few eV to a few hundred eV range has presented new problems in the production and transport of ion beams and has led to the development of highly specialised, ultra-low energy systems. These technological developments, in conjunction with the improvements in understanding of fundamental processes have widened the range of applications of low energy beams. (author) 52 refs

Tuning the hydrophobicity of mica surfaces by hyperthermal Ar ion irradiation

International Nuclear Information System (INIS)

Keller, Adrian; Ogaki, Ryosuke; Bald, Ilko; Dong Mingdong; Kingshott, Peter; Fritzsche, Monika; Facsko, Stefan; Besenbacher, Flemming

2011-01-01

The hydrophobicity of surfaces has a strong influence on their interactions with biomolecules such as proteins. Therefore, for in vitro studies of bio-surface interactions model surfaces with tailored hydrophobicity are of utmost importance. Here, we present a method for tuning the hydrophobicity of atomically flat mica surfaces by hyperthermal Ar ion irradiation. Due to the sub-100 eV energies, only negligible roughening of the surface is observed at low ion fluences and also the chemical composition of the mica crystal remains almost undisturbed. However, the ion irradiation induces the preferential removal of the outermost layer of K + ions from the surface, leading to the exposure of the underlying aluminosilicate sheets which feature a large number of centers for C adsorption. The irradiated surface thus exhibits an enhanced chemical reactivity toward hydrocarbons, resulting in the adsorption of a thin hydrocarbon film from the environment. Aging these surfaces under ambient conditions leads to a continuous increase of their contact angle until a fully hydrophobic surface with a contact angle >80 deg. is obtained after a period of about 3 months. This method thus enables the fabrication of ultrasmooth biological model surfaces with precisely tailored hydrophobicity.

Production of low axial energy spread ion beams with multicusp sources

Energy Technology Data Exchange (ETDEWEB)

Lee, Yung -Hee Y. [Univ. of California, Berkeley, CA (United States)

1998-05-01

Multicusp ion sources are capable of producing ions with low axial energy spread which are necessary in applications such as: ion projection lithography (IPL) and focused ion beams for the next generation lithographic tools and nuclear science experiments such as radioactive ion beam production. The axial ion energy spread for multicusp source is approximately 6 eV which is too large for IPL and radioactive ion beam applications. The addition of a magnetic filter which consists of a pair of permanent magnets to the multicusp source reduces the energy spread considerably. The reduction is due to the improvement in the uniformity of the axial plasma potential distribution in the discharge region. Axial ion energy spread of the filament driven ion source has been measured using three different techniques. In all cases, it was found to be less than 2 eV. Energy spread of the radio frequency (RF) driven source has also been explored, and it was found to be less than 3 eV with the proper RF-shielding. A new multicusp source configuration has been designed and constructed to further reduce the energy spread. To achieve a more uniform axial plasma potential distribution, a cylindrical magnetic filter has been designed and constructed for a 2-cm-diameter source. This new source configuration, the co-axial source, is new in its kind. The energy spread in this source has been measured to be a record low of 0.6 eV. Because of the novelty of this device, some plasma parameters inside the source have been studied. Langmuir probe has been used to measure the plasma potential, the electron temperature and the density distribution.

Production of low axial energy spread ion beams with multicusp sources

International Nuclear Information System (INIS)

Lee, Y.H.Y.

1998-05-01

Multicusp ion sources are capable of producing ions with low axial energy spread which are necessary in applications such as: ion projection lithography (IPL) and focused ion beams for the next generation lithographic tools and nuclear science experiments such as radioactive ion beam production. The axial ion energy spread for multicusp source is approximately 6 eV which is too large for IPL and radioactive ion beam applications. The addition of a magnetic filter which consists of a pair of permanent magnets to the multicusp source reduces the energy spread considerably. The reduction is due to the improvement in the uniformity of the axial plasma potential distribution in the discharge region. Axial ion energy spread of the filament driven ion source has been measured using three different techniques. In all cases, it was found to be less than 2 eV. Energy spread of the radio frequency (RF) driven source has also been explored, and it was found to be less than 3 eV with the proper RF-shielding. A new multicusp source configuration has been designed and constructed to further reduce the energy spread. To achieve a more uniform axial plasma potential distribution, a cylindrical magnetic filter has been designed and constructed for a 2-cm-diameter source. This new source configuration, the co-axial source, is new in its kind. The energy spread in this source has been measured to be a record low of 0.6 eV. Because of the novelty of this device, some plasma parameters inside the source have been studied. Langmuir probe has been used to measure the plasma potential, the electron temperature and the density distribution

Conductometric Determination of Single Pores in Polyethyleneterephthalate Irradiated by Heavy Ions

CERN Document Server

Oganesyan, V R; Dörschel, B; Vetter, J E; Danziger, M; Hermsdorf, D

2002-01-01

Most of previous works devoted to the problem of track formation processes did not pay enough attention to direct measurement of the appearance of every individual pore in an array of many pores induced by the irradiation of polymer films with ions. Such measurements are not easy to carry out due to the extremely high electric resistance in the moment of pore opening. In this work the analysis of films irradiated with low particle fluences up to 3.7\\cdot 10^{3} ions/cm^2 is described. Polyethyleneterephthalate (PET) Hostaphan with a thickness of 20 m was used. The samples were irradiated with Bi ions of 11.4 MeV/amu energy. Using optimized etching conditions and computer aided data evaluation we obtained results, which are in good agreement with theoretical predictions and model calculations. The measured increase of conductivity beginning from the breakthrough of a single track up to the next pore opening in dependence on the etching time and the number of opened pores confirm the assumed model. Thus, the de...

Conductometric determination of single pores in polyethyleneterephthalate irradiated by heavy ions

CERN Document Server

Oganesyan, V R; Dörschel, B; Hermsdorf, D; Trofimov, V V; Vetter, J

2002-01-01

Most of the previous works devoted to the problem of track formation processes did not pay enough attention to direct measurement of the appearance of every individual pore in an array of many pores induced by the irradiation of polymer films with ions. Such measurements are not easy to carry out due to the extremely high electric resistance in the moment of pore opening. In this work the analysis of films irradiated with low particle fluences up to 3.7 centre dot 10 sup 3 ions/cm sup 2 is described. Polyethyleneterephthalate (PET) Hostaphan with a thickness of 20 mu m was used. The samples were irradiated with Bi ions of 11.4 MeV/amu energy. Using optimized etching conditions and computer aided data evaluation, we obtained results, which are in good agreement with theoretical predictions and model calculations. The measured increase of conductivity beginning from the breakthrough of a single track up to the next pore opening in dependence on the etching time and the number of opened pores confirm the assumed...

MeV single-ion beam irradiation of mammalian cells using the Surrey vertical nanobeam, compared with broad proton beam and X-ray irradiations

Energy Technology Data Exchange (ETDEWEB)

Prakrajang, K. [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Faculty of Science, Maejo University, Chiang Mai 50290 (Thailand); Jeynes, J.C.G.; Merchant, M.J.; Kirkby, K.; Kirkby, N. [Surrey Ion Beam Center, Faculty of Engineering and Physical Science, University of Surrey, Guildford Surrey, GU2 7XH (United Kingdom); Thopan, P. [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Yu, L.D., E-mail: yuld@fnrf.science.cmu.ac.th [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Thailand Center of Excellence in Physics, Commission on Higher Education, 328 Si Ayutthaya Road, Bangkok 10400 (Thailand)

2013-07-15

Highlights: •Recently completed nanobeam at the Surrey Ion Beam Centre was used. •3.8-MeV single and broad proton beams irradiated Chinese hamster cells. •Cell survival curves were measured and compared with 300-kV X-ray irradiation. •Single ion irradiation had a lower survival part at ultra-low dose. •It implies hypersensitivity, bystander effect and cell cycle phase of cell death. -- Abstract: As a part of a systematic study on mechanisms involved in physical cancer therapies, this work investigated response of mammalian cells to ultra-low-dose ion beam irradiation. The ion beam irradiation was performed using the recently completed nanobeam facility at the Surrey Ion Beam Centre. A scanning focused vertical ion nano-beam was applied to irradiate Chinese hamster V79 cells. The V79 cells were irradiated in two different beam modes, namely, focused single ion beam and defocused scanning broad ion beam of 3.8-MeV protons. The single ion beam was capable of irradiating a single cell with a precisely controlled number of the ions to extremely low doses. After irradiation and cell incubation, the number of surviving colonies as a function of the number of the irradiating ions was measured for the cell survival fraction curve. A lower survival for the single ion beam irradiation than that of the broad beam case implied the hypersensitivity and bystander effect. The ion-beam-induced cell survival curves were compared with that from 300-kV X-ray irradiation. Theoretical studies indicated that the cell death in single ion irradiation mainly occurred in the cell cycle phases of cell division and intervals between the cell division and the DNA replication. The success in the experiment demonstrated the Surrey vertical nanobeam successfully completed.

Ion mass dependence for low energy channeling in single-wall nanotubes

International Nuclear Information System (INIS)

Zheng Liping; Zhu Zhiyuan; Li Yong; Zhu Dezhang; Xia Huihao

2008-01-01

An Monte Carlo (MC) simulation program has been used to study ion mass dependence for the low energy channeling of natural- and pseudo-Ar ions in single-wall nanotubes. The MC simulations show that the channeling critical angle Ψ C obeys the (E) -1/2 and the (M 1 ) -1/2 rules, where E is the incident energy and M 1 is the ion mass. The reason for this may be that the motion of the channeled (or de-channeled) ions should be correlated with both the incident energy E and the incident momentum (2M 1 E) 1/2 , in order to obey the conservation of energy and momentum

Impact of Low-Energy Ion Beam Implantation on the Expression of Ty1-copia-like Retrotransposons in Wheat (Triticum aestivum)

International Nuclear Information System (INIS)

Ya Huiyuan; Jiao Zhen; Gu Yunhong; Wang Weidong; Qin Guangyong; Huo Yuping

2007-01-01

Retrotransposon-like elements are major constituents of most eukaryotic genomes. For example, they account for roughly 90% of the wheat (Triticum aestivum) genome. Previous study on a wheat strain treated by low-energy N + ions indicated the variations in AFLP (Amplified Fragment Length Polymorphism ) markers. One such variation was caused by the re-activation of Ty1-copia-like retrotransposons, implying that the mutagenic effects of low-energy ions might work through elevated activation of retrotransposons. In this paper an expression profile of Ty1-copia-like retrotransposons in wheat treated by low-energy N + ions is reported. The reverse transcriptase (RT) domains of these retrotransposons were amplified by reverse-transcriptional polymerase chain reaction (RT-PCR) and sequentially cloned. 42 and 65 clones were obtained from the treated (CL) and control materials (CK), respectively. Sequence analysis of each clone was performed by software. Phylogeny and classification were calculated responding to the sequences of the RT domains. All the results show that there is much difference in the RT domain between the control sample and the treated sample. Especially, the RT domains from the treated group encode significantly more functional ORF (open reading frames) than those from the control sample. This observation suggests that the treated sample has higher activation of retrotransposons, possibly as a consequence of low-energy ion beam irradiation. It also suggests that retrotransposons in the two groups impact the host gene expression in two different ways and carry out different functions in wheat cells

Defect production in natural diamond irradiated with high energy Ni ions

International Nuclear Information System (INIS)

Varichenko, V.S.; Martinovich, V.A.; Penina, N.M.; Zajtsev, A.M.; Stel'makh, V.F.; Didyk, A.Yu.; Fahrner, W.R.

1995-01-01

Defect production in diamond irradiated by 335 MeV Ni ions within a dose range of 5 · 10 12 - 5 · 10 14 cm -2 has been studied by electron paramagnetic resonance (EPR) method. The irradiation leads to the appearance in diamond lattice of quasi-one-dimensional track like structures with non tetrahedral atomic configurations. Possible mechanism of microwave conductivity in the modified structures is discussed. Peculiarities of depth distribution profile of concentration of paramagnetic centres in modified structures are explained by track channeling and by stopped ions because of their elastic collisions with lattice atoms during ion stopping. (author). 24 refs., 4 figs., 1 tab

Saturation of plastic deformation by swift heavy ion irradiation: Ion hammering vs. surface effects

Energy Technology Data Exchange (ETDEWEB)

Ferhati, Redi; Dautel, Knut; Bolse, Wolfgang [Institut fuer Halbleiteroptik und Funktionelle Grenzflaechen, Universitaet Stuttgart (Germany); Fritzsche, Monika [Helmholtz-Zentrum Dresden-Rossendorf (Germany)

2012-07-01

Swift heavy ion (SHI) induced plastic deformation is a subject of current research and scientific discussion. This *Ion Hammering* phenomenon was first observed 30 years ago in amorphous materials like metallic glasses. About 10 years ago, Feyh et al. have shown that stress generation and *Ion Hammering* result in self-organization of thin NiO-films on Si-wafers into a sub-micron lamellae-like structure under grazing angle irradiation. The growth of the lamellae was found to saturate as soon as they have reached a thickness of a few hundreds of nm. Here we show our latest results on the restructuring of pre-patterned thin oxide films by SHI under various irradiation conditions. The experiments were performed by employing (in-situ) scanning electron microscopy, and were complemented by (in-situ) energy dispersive x-ray analysis and atomic force microscopy. As we will show, the saturation behavior can be understood as a competition of *Ion Hammering* and surface energy effects, while the unexpected fact, that the initially crystalline films undergo *Ion Hammering* can possibly be attributed to oxygen loss and thus amorphization during irradiation.

Study on rice transformation mediated by low energy ion beam implantation

International Nuclear Information System (INIS)

Li Hong; Wu Lifang; Yu Zengliang

2001-01-01

Delivery of foreign DNA into rice via ion beam was first reported in 1994. In recent years we have aimed to set up efficient transformation system mediated by low energy ion beam. The factors that influence the transformation including type of ion, parameters of ion energy, dose and dose rate, plant genotype, composition of media, concentration of hormones and antibiotics were carefully investigated. Treated with 25ke V Ar + , the transformation efficiencies of the mature embryos of rice variety 02428, Hua pei94-jian-09 and Minghui63 reached 11%, 11.4% and 7.1% measured by produced antibiotic resistant callus and l.52%, 1.87% and l.13% measured by regenerated plants respectively. PCR detection and Southern blot analysis showed that GUS report gene had inserted in rice genome. Low energy ion beam mediated gene transfer will be extended to other cereal recalcitrant to Agrobacterium tumefaciens as soon as methodological parameters were optimized. (authors)

Morphology variation, composition alteration and microstructure changes in ion-irradiated 1060 aluminum alloy

Science.gov (United States)

Wan, Hao; Si, Naichao; Wang, Quan; Zhao, Zhenjiang

2018-02-01

Morphology variation, composition alteration and microstructure changes in 1060 aluminum irradiated with 50 keV helium ions were characterized by field emission scanning electron microscopy (FESEM) equipped with x-ray elemental scanning, 3D measuring laser microscope and transmission electron microscope (TEM). The results show that, helium ions irradiation induced surface damage and Si-rich aggregates in the surfaces of irradiated samples. Increasing the dose of irradiation, more damages and Si-rich aggregates would be produced. Besides, defects such as dislocations, dislocation loops and dislocation walls were the primary defects in the ion implanted layer. The forming of surface damages were related with preferentially sputtering of Al component. While irradiation-enhanced diffusion and irradiation-induced segregation resulted in the aggregation of impurity atoms. And the aggregation ability of impurity atoms were discussed based on the atomic radius, displacement energy, lattice binding energy and surface binding energy.

Irradiation of graphene field effect transistors with highly charged ions

Energy Technology Data Exchange (ETDEWEB)

Ernst, P.; Kozubek, R.; Madauß, L.; Sonntag, J.; Lorke, A.; Schleberger, M., E-mail: marika.schleberger@uni-due.de

2016-09-01

In this work, graphene field-effect transistors are used to detect defects due to irradiation with slow, highly charged ions. In order to avoid contamination effects, a dedicated ultra-high vacuum set up has been designed and installed for the in situ cleaning and electrical characterization of graphene field-effect transistors during irradiation. To investigate the electrical and structural modifications of irradiated graphene field-effect transistors, their transfer characteristics as well as the corresponding Raman spectra are analyzed as a function of ion fluence for two different charge states. The irradiation experiments show a decreasing mobility with increasing fluences. The mobility reduction scales with the potential energy of the ions. In comparison to Raman spectroscopy, the transport properties of graphene show an extremely high sensitivity with respect to ion irradiation: a significant drop of the mobility is observed already at fluences below 15 ions/μm{sup 2}, which is more than one order of magnitude lower than what is required for Raman spectroscopy.

Radiation-induced epigenetic alterations after low and high LET irradiations

International Nuclear Information System (INIS)

Aypar, Umut; Morgan, William F.; Baulch, Janet E.

2011-01-01

Epigenetics, including DNA methylation and microRNA (miRNA) expression, could be the missing link in understanding radiation-induced genomic instability (RIGI). This study tests the hypothesis that irradiation induces epigenetic aberrations, which could eventually lead to RIGI, and that the epigenetic aberrations induced by low linear energy transfer (LET) irradiation are different than those induced by high LET irradiations. GM10115 cells were irradiated with low LET X-rays and high LET iron (Fe) ions and evaluated for DNA damage, cell survival and chromosomal instability. The cells were also evaluated for specific locus methylation of nuclear factor-kappa B (NFκB), tumor suppressor in lung cancer 1 (TSLC1) and cadherin 1 (CDH1) gene promoter regions, long interspersed nuclear element 1 (LINE-1) and Alu repeat element methylation, CpG and non-CpG global methylation and miRNA expression levels. Irradiated cells showed increased micronucleus induction and cell killing immediately following exposure, but were chromosomally stable at delayed times post-irradiation. At this same delayed time, alterations in repeat element and global DNA methylation and miRNA expression were observed. Analyses of DNA methylation predominantly showed hypomethylation, however hypermethylation was also observed. We demonstrate that miRNA expression levels can be altered after X-ray irradiation and that these miRNA are involved in chromatin remodeling and DNA methylation. A higher incidence of epigenetic changes was observed after exposure to X-rays than Fe ions even though Fe ions elicited more chromosomal damage and cell killing. This distinction is apparent at miRNA analyses at which only three miRNA involved in two major pathways were altered after high LET irradiations while six miRNA involved in five major pathways were altered after low LET irradiations. This study also shows that the irradiated cells acquire epigenetic changes suggesting that epigenetic aberrations may arise in the

Radiation-induced epigenetic alterations after low and high LET irradiations

Energy Technology Data Exchange (ETDEWEB)

Aypar, Umut, E-mail: uaypa001@umaryland.edu [Department of Radiation Oncology, Radiation Oncology Research Laboratory, University of Maryland School of Medicine, Baltimore, MD 21201 (United States); Morgan, William F. [Biological Sciences Division, Pacific Northwest National Laboratory, Richland, WA 99352 (United States); Baulch, Janet E. [Department of Radiation Oncology, Radiation Oncology Research Laboratory, University of Maryland School of Medicine, Baltimore, MD 21201 (United States)

2011-02-10

Epigenetics, including DNA methylation and microRNA (miRNA) expression, could be the missing link in understanding radiation-induced genomic instability (RIGI). This study tests the hypothesis that irradiation induces epigenetic aberrations, which could eventually lead to RIGI, and that the epigenetic aberrations induced by low linear energy transfer (LET) irradiation are different than those induced by high LET irradiations. GM10115 cells were irradiated with low LET X-rays and high LET iron (Fe) ions and evaluated for DNA damage, cell survival and chromosomal instability. The cells were also evaluated for specific locus methylation of nuclear factor-kappa B (NF{kappa}B), tumor suppressor in lung cancer 1 (TSLC1) and cadherin 1 (CDH1) gene promoter regions, long interspersed nuclear element 1 (LINE-1) and Alu repeat element methylation, CpG and non-CpG global methylation and miRNA expression levels. Irradiated cells showed increased micronucleus induction and cell killing immediately following exposure, but were chromosomally stable at delayed times post-irradiation. At this same delayed time, alterations in repeat element and global DNA methylation and miRNA expression were observed. Analyses of DNA methylation predominantly showed hypomethylation, however hypermethylation was also observed. We demonstrate that miRNA expression levels can be altered after X-ray irradiation and that these miRNA are involved in chromatin remodeling and DNA methylation. A higher incidence of epigenetic changes was observed after exposure to X-rays than Fe ions even though Fe ions elicited more chromosomal damage and cell killing. This distinction is apparent at miRNA analyses at which only three miRNA involved in two major pathways were altered after high LET irradiations while six miRNA involved in five major pathways were altered after low LET irradiations. This study also shows that the irradiated cells acquire epigenetic changes suggesting that epigenetic aberrations may arise

Low energy implantation of boron with decaborane ions

Science.gov (United States)

Albano, Maria Angela

The goal of this dissertation was to determine the feasibility of a novel approach to forming ultra shallow p-type junctions (tens of nm) needed for future generations of Si MOS devices. In the new approach, B dopant atoms are implanted by cluster ions obtained by ionization of decaborane (B 10H14) vapor. An experimental ion implanter with an electron impact ion source and magnetic mass separation was built at the Ion Beam and Thin Film Research Laboratory at NJIT. Beams of B10Hx+ ions with currents of a few microamperes and energies of 1 to 12 keV were obtained and used for implantation experiments. Profiles of B and H atoms implanted in Si were measured by Secondary Ion Mass Spectroscopy (SIMS) before and after rapid thermal annealing (RTA). From the profiles, the junction depth of 57 nm (at 1018 cm-3 B concentration) was obtained with 12 keV decaborane ions followed by RTA. The dose of B atoms that can be implanted at low energy into Si is limited by sputtering as the ion beam sputters both the matrix and the implanted atoms. As the number of sputtered B atoms increases with the implanted dose and approaches the number of the implanted atoms, equilibrium of B in Si is established. This effect was investigated by comparison of the B dose calculated from the ion beam integration with B content in the sample measured by Nuclear Reaction Analysis (NRA). Maximum (equilibrium) doses of 1.35 x 1016 B cm -2 and 2.67 x 1016 B cm-2 were obtained at the beam energies of 5 and 12 keV, respectively. The problem of forming shallow p-type junctions in Si is related not only to implantation depth, but also to transient enhanced diffusion (TED). TED in Si implanted with B10Hx+ was measured on boron doping superlattice (B-DSL) marker layers. It was found that TED, following decaborane implantation, is the same as with monomer B+ ion implantation of equivalent energy and that it decreases with the decreasing ion energy. (Abstract shortened by UMI.)

Investigations on 40 MeV Li3+ ions irradiated GaN epilayers

International Nuclear Information System (INIS)

Suresh Kumar, V.; Kumar, J.; Kanjilal, D.; Asokan, K.; Mohanty, T.; Tripathi, A.; Rossi, Francisca; Zappettini, A.; Lazzarani, L.; Ferrari, C.

2008-01-01

The Metal Organic Chemical Vapour Deposition (MOCVD) grown n-type Gallium nitride (GaN) layers on sapphire (0 0 0 1) substrates have been irradiated at low and room temperatures with 40 MeV Li 3+ ions at the fluence of 1 x 10 13 ions cm -2 . Irradiated samples were characterised by using X-ray diffraction (XRD), photoluminescence (PL), Raman spectroscopy and atomic force microscopy (AFM). XRD results show that the formation of Ga 2 O 3 has been observed upon irradiation. This is due to interface mixing of GaN/Al 2 O 3 , at both temperatures. Also the GaN (0 0 0 2) peak splits into two at low temperature irradiation. PL measurements show a yellow emission band shift towards blue band side upon irradiation at 77 K. Raman studies indicate that the lattice disorder is high at room temperature irradiation compared to low temperature irradiation. AFM images indicate the increasing surface roughness after ion irradiation at room temperature when compared to pristine GaN and low temperature irradiated GaN. These observations are discussed in detail with the use of complementary techniques

The Effect of Ion Energy and Substrate Temperature on Deuterium Trapping in Tungsten

Science.gov (United States)

Roszell, John Patrick Town

Tungsten is a candidate plasma facing material for next generation magnetic fusion devices such as ITER and there are major operational and safety issues associated with hydrogen (tritium) retention in plasma facing components. An ion gun was used to simulate plasma-material interactions under various conditions in order to study hydrogen retention characteristics of tungsten thus enabling better predictions of hydrogen retention in ITER. Thermal Desorption Spectroscopy (TDS) was used to measure deuterium retention from ion irradiation while modelling of TDS spectra with the Tritium Migration Analysis Program (TMAP) was used to provide information about the trapping mechanisms involved in deuterium retention in tungsten. X-ray Photoelectron Spectroscopy (XPS) and Secondary Ion Mass Spectrometry (SIMS) were used to determine the depth resolved composition of specimens used for irradiation experiments. Carbon and oxygen atoms will be among the most common contaminants within ITER. C and O contamination in polycrystalline tungsten (PCW) specimens even at low levels (˜0.1%) was shown to reduce deuterium retention by preventing diffusion of deuterium into the bulk of the specimen. This diffusion barrier was also responsible for the inhibition of blister formation during irradiations at 500 K. These observations may provide possible mitigation techniques for problems associated with tritium retention and mechanical damage to plasma facing components caused by hydrogen implantation. Deuterium trapping in PCW and single crystal tungsten (SCW) was studied as a function of ion energy and substrate temperature. Deuterium retention was shown to decrease with decreasing ion energy below 100 eV/D+. Irradiation of tungsten specimens with 10 eV/D+ ions was shown to retain up to an order of magnitude less deuterium than irradiation with 500 eV/D+ ions. Furthermore, the retention mechanism for deuterium was shown to be consistent across the entire energy range studied (10-500 e

The synthesis of nucleotide in the aqueous solution induced by low energy ions

International Nuclear Information System (INIS)

Shi Huaibin; Shao Chunlin; Wang Xiangqin; Yu Zengliang

2000-08-01

A new apparatus was designed to induce reactions in aqueous solution by introducing low energy ions into the aqueous solution, this apparatus overcome the defaults of the old ones which demanded vacuum and made it possible to study the action among solutions, it also expanded the ion implantation biology. The role of low energy ions was introduced into the study of the origin of life, primitive earth conditions were imitated to study prior-life synthesis of nucleotide by introducing low energy ions into aqueous solution, low energy N + was implanted into adenine supersaturation solution including D-ribose and NH 4 H 2 PO 4 , it was confirmed that 5'-AMP was gained by HPLC analysis of the products. In comparison with other methods in this field, this one is simpler and nearer to the primitive earth conditions, thus it provided a new try for the studying of the origin of life

DLTS spectra of silicon diodes with p+-n-junction irradiated with high energy krypton ions

Directory of Open Access Journals (Sweden)

Nikolai A. Poklonski

2016-06-01

Full Text Available p+-n-Diodes have been studied. The diodes were manufactured on wafers (thickness 460 μm, (111 plane of uniformly phosphorus doped float-zone-grown single-crystal silicon. The resistivity of silicon was 90 Ω cm and the phosphorus concentration was 5×1013 cm−3. The diodes were irradiated with 250 MeV krypton ions. The irradiation fluence was 108 cm−2. Deep-level transient spectroscopy (DLTS was used to examine the defects induced by high energy krypton ion implantation. The DLTS spectra were recorded at a frequency of 1 MHz in the 78–290 K temperature range. The capacity-voltage characteristics have been measured at a reverse bias voltage from 0 to −19 V at a frequency of 1 MHz. We show that the main irradiation-induced defects are A-centers and divacancies. The behavior of DLTS spectra in the 150–260 K temperature range depends essentially on the emission voltage Ue. The variation of Ue allows us to separate the contributions of different defects into the DLTS spectrum in the 150–260 K temperature range. We show that, in addition to A-centers and divacancies, irradiation produces multivacancy complexes with the energy level Et = Ec−(0.5±0.02 eV and an electron capture cross section of ~4×10–13 cm2.

Note: A well-confined pulsed low-energy ion beam: Test experiments of Ar+

Science.gov (United States)

Hu, Jie; Wu, Chun-Xiao; Tian, Shan Xi

2018-06-01

Here we report a pulsed low-energy ion beam source for ion-molecule reaction study, in which the ions produced by the pulsed electron impact are confined well in the spatial size of each bunch. In contrast to the ion focusing method to reduce the transverse section of the beam, the longitudinal section in the translational direction is compressed by introducing a second pulse in the ion time-of-flight system. The test experiments for the low-energy argon ions are performed. The present beam source is ready for applications in the ion-molecule reaction dynamics experiments, in particular, in combination with the ion velocity map imaging technique.

Interaction of low-energy highly charged ions with matter

International Nuclear Information System (INIS)

Ginzel, Rainer

2010-01-01

The thesis presented herein deals with experimental studies of the interaction between highly charged ions and neutral matter at low collision energies. The energy range investigated is of great interest for the understanding of both charge exchange reactions between ions comprising the solar wind and various astrophysical gases, as well as the creation of near-surface nanostructures. Over the course of this thesis an experimental setup was constructed, capable of reducing the kinetic energy of incoming ions by two orders of magnitude and finally focussing the decelerated ion beam onto a solid or gaseous target. A coincidence method was employed for the simultaneous detection of photons emitted during the charge exchange process together with the corresponding projectile ions. In this manner, it was possible to separate reaction channels, whose superposition presumably propagated large uncertainties and systematic errors in previous measurements. This work has unveiled unexpectedly strong contributions of slow radiative decay channels and clear evidence of previously only postulated decay processes in charge exchange-induced X-ray spectra. (orig.)

Observation of transient lattice vacancies produced during high-energy ion irradiation of Ni foils

International Nuclear Information System (INIS)

Tsuchida, Hidetsugu; Iwai, Takeo; Awano, Misa; Kishida, Mutsumi; Katayama, Ichiro; Jeong, Sun-Chang; Ogawa, Hidemi; Sakamoto, Naoki; Komatsu, Masao; Itoh, Akio

2007-01-01

Real-time positron annihilation spectroscopy has been applied for the first time for the investigation of lattice vacancies produced during ion irradiation. Measurements were performed for thin nickel foils irradiated with 2.5 MeV C ions. Doppler broadenings of positron annihilation γ-rays were measured alternately during beam-on and beam-off conditions. It was found that the Doppler broadening line-shape parameter measured during irradiation is larger than those obtained before and after irradiation. This evidently implies that transient or non-survivable vacancy defects are produced during ion irradiation. On the other hand, no such significant change in the line-shape parameter was observed for other face-centred-cubic metal forms of aluminium

Ion irradiation-induced swelling and hardening effect of Hastelloy N alloy

Energy Technology Data Exchange (ETDEWEB)

Zhang, S.J. [Key Laboratory of Artificial Micro-and Nano-structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan 430072 (China); Shanghai Institute of Applied Physics, Chinese Academy of Sciences, Shanghai 201800 (China); Li, D.H.; Chen, H.C.; Lei, G.H.; Huang, H.F.; Zhang, W.; Wang, C.B. [Shanghai Institute of Applied Physics, Chinese Academy of Sciences, Shanghai 201800 (China); Yan, L., E-mail: yanlong@sinap.ac.cn [Shanghai Institute of Applied Physics, Chinese Academy of Sciences, Shanghai 201800 (China); Fu, D.J. [Key Laboratory of Artificial Micro-and Nano-structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan 430072 (China); Tang, M. [Los Alamos National Laboratory, Los Alamos, NM 87545 (United States)

2017-06-15

The volumetric swelling and hardening effect of irradiated Hastelloy N alloy were investigated in this paper. 7 MeV and 1 MeV Xe ions irradiations were performed at room temperature (RT) with irradiation dose ranging from 0.5 to 27 dpa. The volumetric swelling increases with increasing irradiation dose, and reaches up to 3.2% at 27 dpa. And the irradiation induced lattice expansion is also observed. The irradiation induced hardening initiates at low ion dose (≤1dpa) then saturates with higher ion dose. The irradiation induced volumetric swelling may be ascribed to excess atomic volume of defects. The irradiation induced hardening may be explained by the pinning effect where the defects can act as obstacles for the free movement of dislocation lines. And the evolution of the defects' size and number density could be responsible for the saturation of hardness. - Highlights: •Irradiation Swelling: The irradiation induced volumetric swelling increases with ion dose. •Irradiation Hardening: The irradiation hardening initiates below 1 dpa, then saturates with higher ion dose (1–10 dpa). •Irradiation Mechanism: The irradiation phenomena are ascribed to the microstructural evolution of the irradiation defects.

Microstructural and microchemical evolution in vanadium alloys by heavy ion irradiation

Energy Technology Data Exchange (ETDEWEB)

Sekimura, Naoto; Kakiuchi, Hironori; Shirao, Yasuyuki; Iwai, Takeo [Tokyo Univ. (Japan)

1996-10-01

Microstructural and microchemical evolution in vanadium alloys were investigated using heavy ion irradiation. No cavities were observed in V-5Cr-5Ti alloys irradiated to 30 dpa at 520 and 600degC. Energy dispersive X-ray spectroscopy analyses showed that Ti peaks around grain boundaries. Segregation of Cr atoms was not clearly detected. Co-implanted helium was also found to enhance dislocation evolution in V-5Cr-5Ti. High density of matrix cavities were observed in V-5Fe alloys irradiated with dual ions, whereas cavities were formed only around grain boundaries in single ion irradiated V-5Fe. (author)

Effect of the track potential on the motion and energy flow of secondary electrons created from heavy-ion irradiation

Science.gov (United States)

Moribayashi, Kengo

2018-05-01

Using simulations, we have evaluated the effect of the track potential on the motion and energy flow of secondary electrons, with the goal of determining the spatial distribution of energy deposition due to irradiation with heavy ions. We have simulated this effect as a function of the mean path τ between the incident ion-impact-ionization events at ion energies Eion. Here, the track potential is the potential formed from electric field near this incident ion path. The simulations indicate that this effect is mainly determined by τ and hardly depends on Eion. To understand heavy ion beam science more deeply and to reduce the time required by simulations, we have proposed simple approximation methods that almost reproduce the simulation results here.

Low-velocity ion stopping in a dense and low-temperature plasma target

Science.gov (United States)

Deutsch, Claude; Popoff, Romain

2007-07-01

We investigate the stopping specificities involved in the heating of thin foils irradiated by intense ion beams in the 0.3-3 MeV/amu energy range and in close vicinity of the Bragg peak. Considering a swiftly ionized target to eV temperatures before expansion while retaining solid-state density, a typical warm dense matter (WDM) situation thus arises. We stress low Vp stopping through ion diffusion in the given target plasma. This allows to include the case of a strongly magnetized target in a guiding center approximation. We also demonstrate that the ion projectile penetration depth in target is significantly affected by multiple scattering on target electrons. The given plasma target is taken weakly coupled with Maxwell electron either with no magnetic field ( B=0) or strongly magnetized ( B≠0). Dynamical coupling between ion projectiles energy losses and projectiles charge state will also be addressed.

Cell survival in spheroids irradiated with heavy-ion beams

International Nuclear Information System (INIS)

Rodriguez, A.; Alpen, E.L.

1981-01-01

Biological investigations with accelerated heavy ions have been carried out regularly at the Lawrence Berkeley Laboratory Bevalac for the past four years. Most of the cellular investigations have been conducted on cell monolayer and suspension culture systems. The studies to date suggest that heavy charged particle beams may offer some radiotherapeutic advantages over conventional radiotherapy sources. The advantages are thought to lie primarily in an increased relative biological effectiveness (RBE), a decrease in the oxygen enhancement ratio (OER), and better tissue distribution dose. Experiments reported here were conducted with 400 MeV/amu carbon ions and 425 MeV/amu neon ions, using a rat brain gliosarcoma cell line grown as multicellular spheroids. Studies have been carried out with x-rays and high-energy carbon and neon ion beams. These studies evaluate high-LET (linear energy transfer) cell survival in terms of RBE and the possible contributions of intercellular communication. Comparisons were made of the post-irradiation survival characteristics for cells irradiated as multicellular spheroids (approximately 100 μm and 300 μm diameters) and for cells irradiated in suspension. These comparisons were made between 225-kVp x-rays, 400 MeV/amu carbon ions, and 425 MeV/amu neon ions

Track structure for low energy ions including charge exchange processes

International Nuclear Information System (INIS)

Uehara, S.; Nikjoo, H.

2002-01-01

The model and development is described of a new generation of Monte Carlo track structure codes. The code LEAHIST simulates full slowing down of low-energy proton history tracks in the range 1 keV-1 MeV and the code LEAHIST simulates low-energy alpha particle history tracks in the range 1 keV-8 MeV in water. All primary ion interactions are followed down to 1 keV and all electrons to 1 eV. Tracks of secondary electrons ejected by ions were traced using the electron code KURBUC. Microdosimetric parameters derived by analysis of generated tracks are presented. (author)

Ionic conduction studies in Li3+ ion irradiated P(VDF-HFP)-(PC + DEC)-LiCF3SO3 gel polymer electrolyte

International Nuclear Information System (INIS)

Saikia, D.; Hussain, A.M.P.; Kumar, A.; Singh, F.; Avasthi, D.K.

2006-01-01

In an attempt to increase the Li ion diffusivity in gel polymer electrolytes, the effects of Li 3+ ion irradiation in P(VDF-HFP)-(PC + DEC)-LiCF 3 SO 3 electrolyte system, with five different fluences, is studied. Irradiation with swift heavy ions shows enhancement in conductivity at low fluences and decreased in conductivity at higher fluences with respect to pristine polymer electrolyte films. Maximum room temperature ionic conductivity after irradiation is found to be 2.6 x 10 -3 S/cm. This interesting result could be attributed to the fact that, higher fluence provides critical activation energy for cross-linking and crystallization to occur, which results in decrease in ionic conductivity. XRD results show decrease in the degree of crystallinity upon ion irradiation at low fluences (≤10 11 ions/cm 2 ) and increase in crystallinity at high fluences (>10 11 ions/cm 2 ). In FTIR spectra the absorption band intensities around 3025 cm -1 and 2985 cm -1 decrease upon irradiation with a fluence of 5 x 10 1 ions/cm 2 suggesting chain scission and increase upon irradiation with a fluence of 5 x 10 12 ions/cm 2 indicating cross-linking. FTIR analyses corroborate the conductivity and XRD results

Energy analyzer for Auger electron spectroscopy and low-energy backscattering ion spectroscopy

International Nuclear Information System (INIS)

Volkov, S.S.; Gorelik, V.A.; Gutenko, V.T.; Protopopov, O.D.; Trubitsin, A.A.; Shuvalova, Z.A.; Yakushev, G.A.

1988-01-01

Energy analyzer for electron Auger spectroscopy and low-energy backscattering ion spectroscopy is described. Analyzer presents one-cascade variant of cylindrical mirror with second-order focusing. Energy relative resolution is continuously adjusted within 0.2-1.2% limits. Signal/noise relation by Cu Auger-line at 1 muA current of exciting beam changes upper limit of range 150-450

Studies on watermelon somatic cell mutant of resistance to fusaric acid (FA) by low energy Ar+ ion beam irradiation

International Nuclear Information System (INIS)

Wang Haobo; Gu Yunhong; Cheng Guowang; Yu Zengliang

2003-01-01

Three kinds of watermelon seeds irradiated by Ar + ion beam (25 keV, 6.24 x 10 16 ions/cm 2 ) were inoculated in MS medium with 15 mg/L FA. Cotyledons from the sterile seedling as explants were inoculated in MS +BA 2.0 mg/L + FA 15 mg/L. And the adventitious shoots of resistance to FA were cultured in MS + NAA 0.2 mg/L + FA 15 mg/L. The results showed that both the irradiation of Ar + and FA affected the germination rate and seedling of watermelon line 3-27 and YH-5, and the joint effect of Ar + and FA showed an enhanced restraint. The adventitious shoot and rootage induction rate from the seeds irradiated by Ar + were respectively bigger than the unirradiated seeds in 3-27 and YH-5. The increasing ranges were different between two watermelon lines and between the shoot and rootage induction rates

Experimental apparatus to investigate interactions of low energy ions with solid surfaces, 1

International Nuclear Information System (INIS)

Tsukakoshi, Osamu; Narusawa, Tadashi; Mizuno, Masayasu; Sone, Kazuho; Ohtsuka, Hidewo.

1975-12-01

Experimental apparatus to study the surface phenomena has been designed, which is intended to solve the vacuum wall problems in future thermonuclear fusion reactors and large experimental tokamak devices. An ion source and the beam transport optics are provided for bombarding solid target surface with an ion beam of energy from 0.1 to 6 keV. Measuring instruments include an ion energy analyser, a quadrupole mass spectrometer, an Auger electron spectrometer, an electro-micro-balance, a neutral particle energy spectrometer and its calibration system. Pumping system consists of oil-free ultrahigh vacuum pumps. Various kinds of experiments will be carried out by using the apparatus: 1) sputtering by low energy ion bombardment, 2) re-emission of the incident particles during and after ion bombardment, 3) release of adsorbed and occluded gases in the solids by ion bombardment, and 4) backscattering of fast ions. The combinations of measuring instruments for each experiment and their relative positions in the vacuum chamber are described through detailed drawings. The fundamental aspect in design of the ion beam transport optics for a low energy ion beam which can no longer neglect the space charge effect is also discussed. (auth.)

Structural, thermal and optical behavior of 84 MeV oxygen and 120 MeV silicon ions irradiated PES

International Nuclear Information System (INIS)

Samra, Kawaljeet Singh; Thakur, Sonika; Singh, Lakhwant

2011-01-01

In order to study structural, thermal and optical behavior, thin flat samples of polyethersulfone were irradiated with oxygen and silicon ions. The changes in properties were analyzed using different techniques viz: X-ray diffraction, thermo-gravimetric analysis, Fourier transform infrared, UV-visible and photoluminescence spectroscopy. A noticeable increase in the intensity of X-ray diffraction peaks was observed after irradiation with 84 MeV oxygen ions at low and medium fluences, which may be attributed to radiation-induced cross-linking in polymer. Fourier transform infrared and thermo-gravimetric analysis corroborated the results of X-ray diffraction analysis. No noticeable change in the Fourier transform infrared spectra of oxygen ion irradiated polyethersulfone were observed even at the highest fluence of 1 x 10 13 ions cm -2 , but after irradiation with silicon ions, a reduction in intensity of almost all characteristic bands was revealed. An increase in the activation energy of decomposition of polyethersulfone was observed after irradiation with 84 MeV oxygen ions up to medium fluences but degradation was revealed at higher fluences. Similar trends were observed by photoluminescence analysis.

The thermal-spike model description of the ion-irradiated polyimide

International Nuclear Information System (INIS)

Sun Youmei; Zhang Chonghong; Zhu Zhiyong; Wang Zhiguang; Jin Yunfan; Liu Jie; Wang Ying

2004-01-01

To describe the role of electronic energy loss (dE/dX) e for chemical modification of polyimide (PI), multi-layer stacks (corresponding to different dE/dX) were irradiated by different swift heavy ions (1.158 GeV Fe 56 and 1.755 GeV Xe 136 ) under vacuum and at room temperature. Chemical changes of modified PI films were studied by Fourier transform infrared (FTIR) spectroscopy. The chain disruption rate of PI was investigated in the fluence range from 1 x 10 11 to 6 x 10 12 ions/cm 2 and a wider energy stopping power range (2.2-5.1 keV/nm for Fe 56 ions and 8.6-11.5 keV/nm for Xe 136 ions). Alkyne formation was observed over the electronic energy loss range of interest. By applying the saturated track model assumption (the damage process only occur in a cylinder of area σ), the mean degradation and alkyne formation radii in tracks were induced for Fe and Xe ion irradiation, respectively. The results were validated by the thermal-spike model. The analysis of the irradiated PI films shows that the predictions of the thermal-spike model of Szenes are in qualitative agreement with the curve shape of experimental results

Nitric oxide-mediated bystander signal transduction induced by heavy-ion microbeam irradiation

Science.gov (United States)

Tomita, Masanori; Matsumoto, Hideki; Funayama, Tomoo; Yokota, Yuichiro; Otsuka, Kensuke; Maeda, Munetoshi; Kobayashi, Yasuhiko

2015-07-01

In general, a radiation-induced bystander response is known to be a cellular response induced in non-irradiated cells after receiving bystander signaling factors released from directly irradiated cells within a cell population. Bystander responses induced by high-linear energy transfer (LET) heavy ions at low fluence are an important health problem for astronauts in space. Bystander responses are mediated via physical cell-cell contact, such as gap-junction intercellular communication (GJIC) and/or diffusive factors released into the medium in cell culture conditions. Nitric oxide (NO) is a well-known major initiator/mediator of intercellular signaling within culture medium during bystander responses. In this study, we investigated the NO-mediated bystander signal transduction induced by high-LET argon (Ar)-ion microbeam irradiation of normal human fibroblasts. Foci formation by DNA double-strand break repair proteins was induced in non-irradiated cells, which were co-cultured with those irradiated by high-LET Ar-ion microbeams in the same culture plate. Foci formation was suppressed significantly by pretreatment with an NO scavenger. Furthermore, NO-mediated reproductive cell death was also induced in bystander cells. Phosphorylation of NF-κB and Akt were induced during NO-mediated bystander signaling in the irradiated and bystander cells. However, the activation of these proteins depended on the incubation time after irradiation. The accumulation of cyclooxygenase-2 (COX-2), a downstream target of NO and NF-κB, was observed in the bystander cells 6 h after irradiation but not in the directly irradiated cells. Our findings suggest that Akt- and NF-κB-dependent signaling pathways involving COX-2 play important roles in NO-mediated high-LET heavy-ion-induced bystander responses. In addition, COX-2 may be used as a molecular marker of high-LET heavy-ion-induced bystander cells to distinguish them from directly irradiated cells, although this may depend on the time

Comparison of biomolecule desorption yields for low and high energy primary ions

International Nuclear Information System (INIS)

Kamensky, I.; Hakansson, P.; Sundqvist, B.; McNeal, C.J.; MacFarlane, R.

1982-01-01

Ion induced desorption yields of molecular ions from samples of cesium iodide, glycylglycine, ergosterol, bleomycin and a trinucleoside diphosphate have been studied using primary beams of 54 MeV 63 Cu 9+ and 3 keV 133 Cs + . Mass analysis was performed with a time-of-flight technique. Each sample was studied with the same spectrometer for both low and high energy primary ions and without opening of the vacuum chamber in between the measurements. The results show that fast heavy ions give larger yields for all samples studied and that the yield ratios for high to low energy desorption increase with the mass of the sample molecule. (orig.)

Order-disorder phase transformation in ion-irradiated rare earth sesquioxides

International Nuclear Information System (INIS)

Tang, M.; Valdez, J. A.; Sickafus, K. E.; Lu, P.

2007-01-01

An order-to-disorder (OD) transformation induced by ion irradiation in rare earth (RE) sesquioxides, Dy 2 O 3 , Er 2 O 3 , and Lu 2 O 3 , was studied using grazing incidence x-ray diffraction and transmission electron microscopy. These sesquioxides are characterized by a cubic C-type RE structure known as bixbyite. They were irradiated with heavy Kr ++ ions (300 keV) and light Ne + ions (150 keV) at cryogenic temperature (∼120 K). In each oxide, following a relatively low ion irradiation dose of ∼2.5 displacements per atom, the ordered bixbyite structure was transformed to a disordered, anion-deficient fluorite structure. This OD transformation was found in all three RE sesquioxides (RE=Dy, Er, and Lu) regardless of the ion type used in the irradiation. The authors discuss the irradiation-induced OD transformation process in terms of anion disordering, i.e., destruction of the oxygen order associated with the bixbyite structure

Flow direction variations of low energy ions as measured by the ion electron sensor (IES) flying on board of Rosetta

Science.gov (United States)

Szegö, Karoly; Nemeth, Zoltan; Foldy, Lajos; Burch, James L.; Goldstein, Raymond; Mandt, Kathleen; Mokashi, Prachet; Broiles, Tom

2015-04-01

The Ion Electron Sensor (IES) simultaneously measures ions and electrons with two separate electrostatic plasma analyzers in the energy range of 4 eV- 22 keV for ions. The field of view is 90ox360o, with angular resolution 5ox45o for ions, with a sector containing the solar wind being further segmented to 5o × 5o. IES has operated continuously since early 2014. In the ion data a low energy (energy ions. Here we analyze the arrival direction of this low energy component. The origin of these low energy ions is certainly the ionized component of the neutral gas emitted due to solar activity from comet 67P/Churiumov-Gerasimenko. The low energy component in general shows a 6h periodicity due to cometary rotation. The data show, however, that the arrival direction of the low energy ions is smeared both in azimuth and elevation, due possibly to the diverse mechanisms affecting these ions. One of these effects is the spacecraft potential (~-10V), which accelerates the ions towards the spacecraft omnidirectionally. To characterize the flow direction in azimuth-elevation, we have integrated over the lowest 8 energy channels using weighted energy: sum(counts * energy)/sum(counts); and considered only cases when the counts are above 30. When we apply higher cut for counts, the flow direction became more definite. For this analysis we use data files where the two neighbouring energy values and elevation values are collapsed; and the azimuthal resolution is 45o, that is the solar wind azimuthal segmentation is also collapsed. Here we use day 2014.09.11. as illustration. On that day a solar wind shock reached the spacecraft at about ~10 UT. After the shock transition the energy of the solar wind became higher, and after ~12 UT the flow direction of the solar wind fluctuated, sometimes by 35o. On this day Rosetta flew at about 29.3-29.6 km from the nucleus. In the azimuth-elevation plots summed over "weighted energy" (as defined above) we were able to identify two flow directions

High energy (MeV) ion beam modifications of sputtered MoS2 coatings on sapphire

International Nuclear Information System (INIS)

Bhattacharya, R.S.; Rai, A.K.; Erdemir, A.

1991-01-01

The present article reports on the results of our investigations of high-energy (MeV) ion irradiation on the microstructural and tribological properties of dc magnetron sputtered MoS 2 films. Films of thicknesses 500-7500 A were deposited on NaCl, Si and sapphire substrates and subsequently ion irradiated by 2 MeV Ag + ions at a dose of 5x10 15 cm -2 . Scanning and transmission electron microscopy. Rutherford backscattering and X-ray diffraction techniques were utilized to study the structural, morphological and compositional changes of the film due to ion irradiation. The friction coefficient and sliding life were determined by pin-on-disc tests. Both as-deposited and ion-irradiated films were found to be amorphous having a stoichiometry of MoS 1.8 . A low friction coefficient in the range 0.03-0.04 was measured for both as-deposited and ion-irradiated films. However, the sliding life of ion-irradiated film was found to increase more than tenfold compared to as-deposited films indicating improved bonding at the interface. (orig.)

Effect of Ion Beam Irradiation on Silicon Carbide with Different Microstructures

International Nuclear Information System (INIS)

Park, Kyeong Hwan; Park, Ji Yeon; Kim, Weon Ju; Jung, Choong Hwan; Ryu, Woo Seog

2006-01-01

SiC and SiC/SiC composites are one of promising candidates for structural materials of the next generation energy systems such as the gas-cooled reactors and fusion reactors. This anticipation yields many material issues, and radiation effects of silicon carbide are recognized as an important research subject. Silicon carbide has diverse crystal structures (called polytypes), such as α-SiC (hexagonal structure), β-SiC (cubic structure) and amorphous SiC. Among these polytypes, β-SiC has been studied as matrix material in SiC/SiC composites. Near-stoichiometric β-SiC with high crystallinity and purity is considered as suitable material in the next generation energy system and matrix material in SiC/SiC composites because of its excellent radiation resistance. Highly pure and crystalline β-SiC and SiC/SiC composites could be obtained by the chemical vapor deposition (CVD) and Infiltration (CVI) process using a gas mixture of methyltrichlorosilane (CH 3 SiCl 3 , MTS) and purified H 2 . SiC produced by the CVD method has different grain size and microstructural morphology depended on the process conditions such as temperature, pressure and the input gas ratio. In this work, irradiation effects of silicon carbide were investigated using ion beam irradiation with emphasis on the influence of grain size and grain boundary. MeV ion irradiation at low temperature makes amorphous phase in silicon carbide. The microstructures and mechanical property changes of silicon carbide with different structures were analyzed after ion beam irradiation

Repair of skin damage during fractionated irradiation with gamma rays and low-LET carbon ions

International Nuclear Information System (INIS)

Ando, Koichi; Koike, Sachiko; Uzawa, Akiko; Takai, Nobuhiko; Fukawa, Takeshi; Furusawa, Yoshiya; Aoki, Mizuho; Hirayama, Ryoichi

2006-01-01

In clinical use of carbon-ion beams, a deep-seated tumor is irradiated with a Spread-Out Bragg peak (SOBP) with a high-linear energy transfer (LET) feature, whereas surface skin is irradiated with an entrance plateau, the LET of which is lower than that of the peak. The repair kinetics of murine skin damage caused by an entrance plateau of carbon ions was compared with that caused by photons using a scheme of daily fractionated doses followed by a top-up dose. Right hind legs received local irradiations with either 20 keV/μm carbon ions or γ rays. The skin reaction of the irradiated legs was scored every other day up to Day 35 using a scoring scale that consisted of 10 steps, ranging from 0.5 to 5.0. An isoeffect dose to produce a skin reaction score of 3.0 was used to obtain a total dose and a top-up dose for each fractionation. Dependence on a preceding dose and on the time interval of a top-up dose was examined using γ rays. For fractionated γ rays, the total dose linearly increased while the top-up dose linearly decreased with an increase in the number of fractions. The magnitude of damage repair depended on the size of dose per fraction, and was larger for 5.2 Gy than 12.5 Gy. The total dose of carbon ions with 5.2 Gy per fraction did not change till 2 fractions, but abruptly increased at the 3rd fraction. Factors such as rapid repopulation, induced repair and cell cycle synchronization are possible explanations for the abrupt increase. As an abrupt increase/decrease of normal tissue damage could be caused by changing the number of fractions in carbon-ion radiotherapy, we conclude that, unlike photon therapy, skin damage should be carefully studied when the number of fractions is changed in new clinical trials. (author)

Self-ion Irradiation Damage of F/M and ODS steels

International Nuclear Information System (INIS)

Kang, Suk Hoon; Chun, Young-Bum; Noh, Sanghoon; Jang, Jinsung; Kim, Tae Kyu

2014-01-01

Oxide dispersion strengthened (ODS) ferritic steels are potential high-temperature materials that are stabilized by dispersed particles at elevated temperatures. These dispersed particles improve the tensile strength and creep rupture strength, they are expected to increase the operation temperature up to approximately 650 .deg. C and also enhance the energy efficiency of the fusion reactor. Some reports described that the nano-clusters are strongly resistant to coarsening by annealing up to 1000 .deg. C, and nanoclusters do not change after ion irradiation up to 0.7 dpa at 300 .deg. C. ODS steels will be inevitably exposed to neutron irradiation condition; the irradiation damages, creep and swelling are always great concern. The dispersed oxide particles are believed to determine the performance of the steel, even the radiation resistance. In this study, F/M and ODS model alloys of Korea Atomic Energy Research Institute (KAERI) were irradiated by Fe 3+ self-ion to emulate the neutron irradiation effect. In this study, Fe 3+ self-ion irradiation is used as means of introducing radiation damage in F/M steel and ODS steel. The ion accelerator named DuET (in Kyoto University, Japan) was used for irradiation of Fe 3+ ion by 6.4 MeV at 300 .deg. C. The maximum damage rate in F/M and ODS steels were estimated roughly 6 dpa. After radiation, point or line defects were dominantly observed in F/M steel, on the other hands, small circular cavities were typically observed in ODS steel. Nanoindentation is a useful tool to determine the irradiationinduced hardness change in the damage layer of ionirradiated iron base alloys

Conductometric determination of single pores in polyethyleneterephthalate irradiated by heavy ions

International Nuclear Information System (INIS)

Oganesyan, V.R.; Trofimov, V.V.; Doerschel, B.; Hermsdorf, D.; Vetter, J.; Danziger, M.

2002-01-01

Most of the previous works devoted to the problem of track formation processes did not pay enough attention to direct measurement of the appearance of every individual pore in an array of many pores induced by the irradiation of polymer films with ions. Such measurements are not easy to carry out due to the extremely high electric resistance in the moment of pore opening. In this work the analysis of films irradiated with low particle fluences up to 3.7·10 3 ions/cm 2 is described. Polyethyleneterephthalate (PET) Hostaphan with a thickness of 20μm was used. The samples were irradiated with Bi ions of 11.4 MeV/amu energy. Using optimized etching conditions and computer aided data evaluation, we obtained results, which are in good agreement with theoretical predictions and model calculations. The measured increase of conductivity beginning from the breakthrough of a single track up to the next pore opening in dependence on the etching time and the number of opened pores confirm the assumed model. Thus, the developed 'track-by-track' method can be used effectively for description of the sequential appearance of individual pores in an electrolytic etching process

Depth profiling by Raman spectroscopy of high-energy ion irradiated silicon carbide

Energy Technology Data Exchange (ETDEWEB)

Wang, Xu; Zhang, Yanwen; Liu, Shiyi; Zhao, Ziqiang, E-mail: zqzhao@pku.edu.cn

2014-01-15

Single crystals of 6H–SiC were irradiated at room temperature with 20 MeV carbon ions at fluences of 1.5 × 10{sup 15} and 6.0 × 10{sup 15} cm{sup −2}. Raman measurements were performed to study irradiation induced damage and the in-depth damage profile of SiC. A clear change of damage from the surface down to the stopping region of carbon ions as simulated by SRIM is exhibited. The affected area as detected by Raman is in good agreement with SRIM predictions while a little shallower dpa profile is observed. The partial disorder defined in the present work as a function of depth is demonstrated. A shift of the position of the TO peak towards lower wavenumbers with in-depth damage and then to higher wavenumbers beyond the most damaged region indicates that tensile strain due to defects has a backward V-curve distribution. The damaged layer is subjected to a compressive in-plane stress associated with the out-of-plane strain and the magnitude of this stress also has a backward V-curve depth profile. The evolution of line width of the TO peak with depth clearly shows the density of defects reaches the higher level at the most damaged region. The Raman spectroscopy scanning technique is proved to be a powerful tool for profiling of crystal damage induced by high-energy ion implantation.

Effect of electron-excitation on radiation damage in ion-irradiated FCC metals

International Nuclear Information System (INIS)

Iwase, Akihiro

1989-06-01

FCC metals (Al, Cu, Ag, Ni) were irradiated with 0.5-1.8 MeV H, He, N and Ar ions, and 84-126 MeV C, F, Si, Cl, Br and I ions at liquid helium temperatures. After the irradiations, thermal annealing experiments were performed up to 300 K. Anomalous reduction of Stage-I recovery was observed in Al and Ni irradiated with high-energy (∼100 MeV) heavy ions. Radiation annealing by 100 MeV I ions was studied in predoped Ni and Cu. The experimental results were analyzed by using a new model which describes the production and radiation annealing of two or more types of defects. The extraordinarily large cross sections for subthreshold recombination of Stage-I defects were obtained in Ni. These results show that in Al and Ni, the energies transferred from the excited electrons to lattice through the electron-lattice interaction contribute to the annihilations of defects during irradiation. (author)

Formation of tungsten oxide nanowires by ion irradiation and vacuum annealing

Science.gov (United States)

Zheng, Xu-Dong; Ren, Feng; Wu, Heng-Yi; Qin, Wen-Jing; Jiang, Chang-Zhong

2018-04-01

Here we reported the fabrication of tungsten oxide (WO3-x ) nanowires by Ar+ ion irradiation of WO3 thin films followed by annealing in vacuum. The nanowire length increases with increasing irradiation fluence and with decreasing ion energy. We propose that the stress-driven diffusion of the irradiation-induced W interstitial atoms is responsible for the formation of the nanowires. Comparing to the pristine film, the fabricated nanowire film shows a 106-fold enhancement in electrical conductivity, resulting from the high-density irradiation-induced vacancies on the oxygen sublattice. The nanostructure exhibits largely enhanced surface-enhanced Raman scattering effect due to the oxygen vacancy. Thus, ion irradiation provides a powerful approach for fabricating and tailoring the surface nanostructures of semiconductors.

ion irradiation

Indian Academy of Sciences (India)

Swift heavy ions interact predominantly through inelastic scattering while traversing any polymer medium and produce excited/ionized atoms. Here samples of the polycarbonate Makrofol of approximate thickness 20 m, spin coated on GaAs substrate were irradiated with 50 MeV Li ion (+3 charge state). Build-in ...

Negative ions as a source of low energy neutral beams

Energy Technology Data Exchange (ETDEWEB)

Fink, J.H.

1980-01-01

Little consideration has been given to the impact of recent developments in negative ion source technology on the design of low energy neutral beam injectors. However, negative ion sources of improved operating efficiency, higher gas efficiency, and smaller beam divergence will lead to neutral deuterium injectors, operating at less than 100 keV, with better operating efficiencies and more compact layouts than can be obtained from positive ion systems.

Negative ions as a source of low energy neutral beams

International Nuclear Information System (INIS)

Fink, J.H.

1980-01-01

Little consideration has been given to the impact of recent developments in negative ion source technology on the design of low energy neutral beam injectors. However, negative ion sources of improved operating efficiency, higher gas efficiency, and smaller beam divergence will lead to neutral deuterium injectors, operating at less than 100 keV, with better operating efficiencies and more compact layouts than can be obtained from positive ion systems

In situ crystallization of sputter-deposited TiNi by ion irradiation

International Nuclear Information System (INIS)

Ikenaga, Noriaki; Kishi, Yoichi; Yajima, Zenjiro; Sakudo, Noriyuki

2013-01-01

Highlights: ► We developed a sputtering deposition process equipped with an ion irradiation system. ► Ion irradiation enables crystallization at lower substrate temperature. ► Ion fluence has an effective range for low-temperature crystallization. ► Crystallized films made on polyimide by the process show the shape memory effect. -- Abstract: TiNi is well known as a typical shape-memory alloy, and the shape-memory property appears only when the structure is crystalline. Until recently, the material has been formed as amorphous film by single-target sputtering deposition at first and then crystallized by being annealed at high temperature over 500 °C. Therefore, it has been difficult to make crystalline TiNi film directly on a substrate of polymer-based material because of the low heat resistance of substrate. In order to realize an actuator from the crystallized TiNi film on polymer substrates, the substrate temperature should be kept below 200 °C throughout the whole process. In our previous studies we have found that deposited film can be crystallized at very low temperature without annealing but with simultaneous irradiation of Ar ions during sputter-deposition. And we have also demonstrated the shape-memory effect with the TiNi film made by the new process. In order to investigate what parameters of the process contribute to the low-temperature crystallization, we have focused to the ion fluence of the ion irradiation. Resultantly, it was found that the transition from amorphous structure to crystal one has a threshold range of ion fluence

Analysis of retarding field energy analyzer transmission by simulation of ion trajectories

Science.gov (United States)

van de Ven, T. H. M.; de Meijere, C. A.; van der Horst, R. M.; van Kampen, M.; Banine, V. Y.; Beckers, J.

2018-04-01

Retarding field energy analyzers (RFEAs) are used routinely for the measurement of ion energy distribution functions. By contrast, their ability to measure ion flux densities has been considered unreliable because of lack of knowledge about the effective transmission of the RFEA grids. In this work, we simulate the ion trajectories through a three-gridded RFEA using the simulation software SIMION. Using idealized test cases, it is shown that at high ion energy (i.e., >100 eV) the transmission is equal to the optical transmission rather than the product of the individual grid transparencies. Below 20 eV, ion trajectories are strongly influenced by the electric fields in between the grids. In this region, grid alignment and ion focusing effects contribute to fluctuations in transmission with ion energy. Subsequently the model has been used to simulate the transmission and energy resolution of an experimental RFEA probe. Grid misalignments reduce the transmission fluctuations at low energy. The model predicts the minimum energy resolution, which has been confirmed experimentally by irradiating the probe with a beam of ions with a small energy bandwidth.

In-situ transport and microstructural evolution in GaN Schottky diodes and epilayers exposed to swift heavy ion irradiation

Science.gov (United States)

Kumar, Ashish; Singh, R.; Kumar, Parmod; Singh, Udai B.; Asokan, K.; Karaseov, Platon A.; Titov, Andrei I.; Kanjilal, D.

2018-04-01

A systematic investigation of radiation hardness of Schottky barrier diodes and GaN epitaxial layers is carried out by employing in-situ electrical resistivity and cross sectional transmission electron microscopy (XTEM) microstructure measurements. The change in the current transport mechanism of Au/n-GaN Schottky barrier diodes due to irradiation is reported. The role of irradiation temperature and ion type was also investigated. Creation of damage is studied in low and medium electron energy loss regimes by selecting different ions, Ag (200 MeV) and O (100 MeV) at various fluences at two irradiation temperatures (80 K and 300 K). GaN resistivity increases up to 6 orders of magnitude under heavy Ag ions. Light O ion irradiation has a much lower influence on sheet resistance. The presence of isolated defect clusters in irradiated GaN epilayers is evident in XTEM investigation which is explained on the basis of the thermal spike model.

Scattering of low energy noble gas ions from a metal surface

International Nuclear Information System (INIS)

Luitjens, S.B.

1980-01-01

Reflection of low energy (0.1-10 keV) noble gas ions can be used to analyse a solid surface. To study charge exchange processes, the ion fractions of neon and of argon, scattered from a Cu(100) surface, have been determined. (Auth.)

Local structure and defects in ion irradiated KTaO3

Science.gov (United States)

Zhang, F. X.; Xi, J.; Zhang, Y.; Tong, Yang; Xue, H.; Huang, R.; Trautmann, C.; Weber, W. J.

2018-04-01

The modification of the local structure in cubic perovskite KTaO3 irradiated with 3 MeV and 1.1 GeV Au ions is studied by Raman and x-ray absorption spectroscopy, complemented by density functional theory (DFT) calculations. In the case of irradiation with 3 MeV Au ions where displacement cascade processes are dominant, the Ta L3-edge x-ray absorption measurements suggest that a peak corresponding to the Ta-O bonds in the TaO6 octahedra splits, which is attributed to the formation of TaK antisite defects that are coupled with oxygen vacancies, V O. This finding is consistent with the DFT calculations. Under irradiation with 1.1 GeV ions, the intense ionization and electronic energy deposition lead to a blue shift and an intensity reduction of active Raman bands. In the case of sequential irradiations, extended x-ray absorption fine structure measurements reveal a decrease in concentration of coupled TaK-V O defects under subsequent irradiation with 1.1 GeV Au ions.

Kinetic energy and charge distributions of multiply charged ions produced by heavy ions and by synchrotron radiation

International Nuclear Information System (INIS)

Levin, J.C.; Biedermann, C.; Cederquist, H.; Liljeby, L.; Short, R.T.; Sellin, I.A.

1989-01-01

This paper contrasts two methods of production of multiply charged ions which may have application in future hot-atom chemistry experiments. Interest in extending the study of ion-atom collisions from MeV to keV to eV energies has grown rapidly in the last decade as previously inaccessible astrophysical, fusion, and spectroscopic problems have been addressed. One of these methods involves highly charged secondary beams formed from ions created in dilute gas samples irradiated by fast (MeV), high-charge-state, heavy ions. The measurements show, however, that such ions often have mean recoil energies two orders of magnitude higher than kinetic energies of ions in similar charge states resulting from vacancy cascades of atomic inner shells photoionized by synchrotron x rays. These results may be applicable to development of a cold source of highly charged ions featuring low energy spread and good angular definition. Results from other laboratories (Grandin et al at Ganil, Ullrich et al in Frankfurt, and Watson et al at Texas A ampersand M) will also be discussed

A quadrupole ion trap as low-energy cluster ion beam source

CERN Document Server

Uchida, N; Kanayama, T

2003-01-01

Kinetic energy distribution of ion beams was measured by a retarding field energy analyzer for a mass-selective cluster ion beam deposition system that uses a quadrupole ion trap as a cluster ion beam source. The results indicated that the system delivers a cluster-ion beam with energy distribution of approx 2 eV, which corresponded well to the calculation results of the trapping potentials in the ion trap. Using this deposition system, mass-selected hydrogenated Si cluster ions Si sub n H sub x sup + were actually deposited on Si(111)-(7x7) surfaces at impact kinetic energy E sub d of 3-30 eV. Observation by using a scanning tunneling microscope (STM) demonstrated that Si sub 6 H sub x sup + cluster ions landed on the surface without decomposition at E sub d =3 eV, while the deposition was destructive at E sub d>=18 eV. (author)

Measurements of sputtering yields for low-energy plasma ions

International Nuclear Information System (INIS)

Nishi, M.; Yamada, M.; Suckewer, S.; Rosengaus, E.

1979-04-01

Sputtering yields of various wall/limiter materials of fusion devices have been extensively measured in the relevant plasma environment for low-energy light ions (E 14 cm -3 and electron temperature up to 10eV. Target materials used were C (graphite), Ti, Mo, Ta, W, and Fe (stainless steel). In order to study the dependence of the sputtering yields on the incident energy of ions, the target samples were held at negative bias voltage up to 300V. The sputtering yields were determined by a weight-loss method and by spectral line intensity measurements. The data obtained in the present experiment agree well with those previously obtained at the higher energies (E greater than or equal to 200eV) by other authors using different schemes; the present data also extend to substantially lower energies (E approx. > 30eV) than hitherto

Direct nanopatterning of polymer/silver nanoblocks under low energy electron beam irradiation.

Science.gov (United States)

El Mel, Abdel-Aziz; Stephant, Nicolas; Gautier, Romain

2016-10-06

In this communication, we report on the growth, direct writing and nanopatterning of polymer/silver nanoblocks under low energy electron beam irradiation using a scanning electron microscope. The nanoblocks are produced by placing a droplet of an ethylene glycol solution containing silver nitrate and polyvinylpyrrolidone diluted in ethanol directly on a hot substrate heated up to 150 °C. Upon complete evaporation of the droplet, nanospheres, nano- and micro-triangles and nanoblocks made of silver-containing polymers, form over the substrate surface. Considering the nanoblocks as a model system, we demonstrate that such nanostructures are extremely sensitive to the e-beam extracted from the source of a scanning electron microscope operating at low acceleration voltages (between 5 and 7 kV). This sensitivity allows us to efficiently create various nanopatterns (e.g. arrays of holes, oblique slits and nanotrenches) in the material under e-beam irradiation. In addition to the possibility of writing, the nanoblocks revealed a self-healing ability allowing them to recover a relatively smooth surface after etching. Thanks to these properties, such nanomaterials can be used as a support for data writing and erasing on the nanoscale under low energy electron beam irradiation.

Low Current Irradiation Facility at KOMAC

Energy Technology Data Exchange (ETDEWEB)

Min, Yi-Sub; Park, Sung-Kyun; Park, Jeong-Min; Cho, Yong-Sub [Korea Atomic Energy Research Institute, Daejeon (Korea, Republic of)

2016-10-15

Korea Multi-purpose Accelerator Complex (KOMAC) is branched off from Korea Atomic Energy Research Institute (KAERI). The 100 MeV linear proton accelerator as well as the various types of the ion accelerator have been operated and developed in KOMAC. The operation of these accelerators included in the KOMAC site should be approved by Nuclear Safety and Security Committee (NSSC). To aims at the operation in 2017, a research facility to irradiate low current beam has been prepared. The radiation safety analysis was performed again to adopt with the change. As a result of these changes, an easy access into the facility will be got to. This paper introduces the activity in terms of the radiation safety for these accelerator operations. Radiation analysis was performed depending on the planned changes, and it was confirmed that there is no effect by the changes. This facility is expected to be made the best use at a field which could be irradiated with proton beam which has an energy up to 100 MeV and current up to 10 nA.

Effects of H-implantation energy on the optical stability of implanted usher films under photo-irradiation

International Nuclear Information System (INIS)

Awazu, K.; Yasui, H.; Kasamori, M.; Ichikawa, T.; Funada, Y.; Iwaki, M.

1999-01-01

A study has been made on the improvement of the optical stability of urushi films under optical irradiation using ion implantation. Ion implantation of hydrogen ions in urushi films was performed with a dose of 10 15 ions/cm 2 at ion energies ranging from 0.2 to 150 keV at room temperature. The photo-irradiation onto the urushi films was carried out at irradiation energies ranging from 40 to 400 MJ/m 2 . H-implantation onto urushi films is useful for improving the optical stability under photo-irradiation when the implantation energy is larger than 60 keV

A simple model for low energy ion-solid interactions

International Nuclear Information System (INIS)

Mohajerzadeh, S.; Selvakumar, C.R.

1997-01-01

A simple analytical model for ion-solid interactions, suitable for low energy beam depositions, is reported. An approximation for the nuclear stopping power is used to obtain the analytic solution for the deposited energy in the solid. The ratio of the deposited energy in the bulk to the energy deposited in the surface yields a ceiling for the beam energy above which more defects are generated in the bulk resulting in defective films. The numerical evaluations agree with the existing results in the literature. copyright 1997 American Institute of Physics

GXRD study of 100 MeV Fe9+ ion irradiated indium phosphide

International Nuclear Information System (INIS)

Dubey, R.L.; Dubey, S.K.; Kachhap, N.K.; Kanjilal, D.

2014-01-01

Swift heavy ions with MeV to GeV kinetic energy offer unique possibilities of modifying material properties. Each projectile passing through the target material causes loss of its energy by ion-electrons and ion-atoms interaction with the target material. The consequence of formal one is to change in surface properties and latter to produces damage deep in the target material near the projected range of projectile. In the present work, indium phosphide samples were irradiated at 100 MeV 56 Fe 9+ ions with different fluences varying from 1x10 12 to 1x10 14 ions cm -2 using the 15UD Pelletron facilities at Inter University Accelerator Centre (IUAC), New Delhi. Grazing angle X-ray diffraction technique was used to investigate the structural properties of irradiated indium phosphide at different depths. The GXRD spectra of non-irradiated and irradiated samples were recorded at different grazing angle i.e 1°, 2°, 3°, 4° and 5° to get the structural information over the projected range. The detailed result will be presented and discussed in the conference. (author)

Localized subsurface modification of materials using micro-low-energy multiple ion beamlets

Directory of Open Access Journals (Sweden)

Abhishek Chowdhury

2011-12-01

Full Text Available Generation of focused multiple ion beamlets from an intense microwave plasma source is investigated for the creation of localized subsurface modification of materials. Unlike conventional single element focused ion beam (FIB systems, the plasma source is capable of providing ion beams of multiple elements. Two types of plasma electrodes (PE are employed, one with a honeycomb structure with notched apertures and another with a 5×5 array of through apertures, both attached to the plasma source and are capable of generating focused ion beamlets (50 - 100 μm diameter in a patterned manner. Measurements of ion saturation current near the PE indicate that the plasma is uniform over an area of ∼ 7 cm2, which is further confirmed by uniformity in extracted beam current through the apertures. The ion beams are applied to investigate change in electrical sheet resistance Rs of metallic thin films in a controlled manner by varying the ionic species and beam energy. Results indicate a remarkable increase in Rs with beam energy (∼ 50 % at 1 keV for Ar ions, and with ionic species (∼ 90% for Krypton ions at 0.6 keV, when 80 nm thick copper films are irradiated by ∼2 cm diameter ion beams. Ion induced surface roughness is considered as the main mechanism for this change as confirmed by atomic force microscopy (AFM measurements. Predictions for micro-beamlet induced change in Rs are discussed. The experimental results are verified using TRIM and AXCEL-INP simulations.

An online low energy gaseous ion source

International Nuclear Information System (INIS)

Jin Shuoxue; Guo Liping; Peng Guoliang; Zhang Jiaolong; Yang Zheng; Li Ming; Liu Chuansheng; Ju Xin; Liu Shi

2010-01-01

The accumulation of helium and/or hydrogen in nuclear materials may cause performance deterioration of the materials. In order to provide a unique tool to investigate the He-and/or H-caused problems, such as interaction of helium with hydrogen and defects, formation of gas bubbles and its evolution, and the related effects, we designed a low energy (≤ 20 keV) cold cathode Penning ion source, which will be interfaced to a 200 kV transmission electron microscope (TEM), for monitoring continuously the evolution of micro-structure during the He + or H + ion implantation. Studies on discharge voltage-current characteristics of the ion source, and extraction and focusing of the ion beam were performed. The ion source works stably with 15-60 mA of the discharge current.Under the gas pressure of 5 x 10 -3 Pa and 1.5 x 10 -2 Pa, the discharge voltage are about 380 V and 320 V, respectively. The extracted ion current under lower gas pressure is greater than that under higher gas pressure, and it increases with the discharge current and extraction voltage. The ion lens consisting of three equal-diameter metal cylinder focus the ion beam effectively, so that the beam density at the 150 cm away from the lens exit increases by a over one order of magnitude. For ion beams of around 10 keV, the measured beam density is about 200 nA · cm -2 , which is applicable for ion implantation and in situ TEM observation for many kinds of nuclear materials. (authors)

Radiative recombination of highly charged ions: Enhanced rates at low energies

International Nuclear Information System (INIS)

Frank, A.; Mueller, A.; Haselbauer, J.; Schennach, S.; Spies, W.; Uwira, O.; Wagner, M.

1992-01-01

In a single-pass merged-beams experiment employing a dense cold electron target recombination of highly charged ions is studied. Unexpected high recombination rates are observed at low energies E cm in the electron-ion center-of-mass frame. In particular, theoretical estimates for radiative recombination are dramatically exceeded by the experimental recombination rates at E cm =0 eV for U 28+ and for Au 25+ ions. Considerable rate enhancement is also observed for Ar 15+ . This points to a general phenomenon which has to be interpreted as a consequence of high electron densities, low electron beam temperatures, high ion charge states and presence of strong magnetic fields. (orig.)

A simple irradiation facility for radiobiological experiments with low energy protons from a cyclotron

International Nuclear Information System (INIS)

Mukherjee, B.

1982-01-01

An experimental facility for irradiation of small biological targets with low-energy protons has been developed. The depth-dose distribution in soft-tissue is calculated from the proton energy spectrum. (orig.)

A study on the effect of low energy ion beam irradiation on Au/TiO_2 system for its application in photoelectrochemical splitting of water

International Nuclear Information System (INIS)

Verma, Anuradha; Srivastav, Anupam; Sharma, Dipika; Banerjee, Anamika; Sharma, Shailja; Satsangi, Vibha Rani; Shrivastav, Rohit; Avasthi, Devesh Kumar; Dass, Sahab

2016-01-01

Nanostructured TiO_2 thin films were deposited on indium tin oxide (ITO) substrate via sol–gel technique and were modified by plasmonic Au layer. The plasmonic Au modified TiO_2 (Au/TiO_2) thin films were then irradiated with 500 keV Ar"2"+ ion beam at different ion fluences viz. 1 × 10"1"6, 3 × 10"1"6 and 1 × 10"1"7 to study the effect of nuclear energy deposition on the morphology, crystallinity, band gap, surface plasmon resonance (SPR) peak exhibited by Au particles and photoelectrochemical properties of the system. Prepared thin films were characterized by X-ray diffractometry (XRD), scanning electron microscopy (SEM), Rutherford backscattering spectrometry (RBS) measurements and UV–visible spectroscopy. The photoelectrochemical measurements revealed that both Au/TiO_2 and Au/TiO_2 thin film irradiated at 1 × 10"1"6 fluence exhibits enhanced photoelectrochemical response in comparison to pristine TiO_2. The film irradiated at 1 × 10"1"6 fluence offered maximum applied bias photon-to-current efficiency (ABPE) and shows 6 times increment in photocurrent density which was attributed to more negative flat band potential, maximum decrease in band gap, high open circuit voltage (V_o_c) and reduced charge transfer resistance.

Effects of ion irradiation on the mechanical properties of several polymers

International Nuclear Information System (INIS)

Sasuga, Tsuneo; Kawanishi, Shunichi; Nishi, Masanobu; Seguchi, Tadao

1991-01-01

The effects of high-energy ion irradiation on the tensile properties of polymers were studied under conditions in which ions should pass completely through the specimen and the results were compared with 2 MeV electron irradiation effects. Experiments were carried out on polymers having various constituents and molecular structures, i.e. eight aliphatic polymers and four aromatic polymers. In the aliphatic polymers studied there was scarcely any difference in the dose dependence of the tensile strength and ultimate elongation between proton and electron irradiation. In the aromatic polymers, however, the decrements in the tensile strength and ultimate elongation vs proton dose were less than those for electron irradiation. In heavy-ion irradiation, the radiation damage of PE (an aliphatic polymer) decreased with increase of LET, but no obvious LET effects were observed in PES (an aromatic polymer). (author)

Early Stage of Deformation under Nanoindenter Tip of Ion-irradiated Single Crystals

International Nuclear Information System (INIS)

Shin, Chan Sun; Jin, Hyung Ha; Kwon, Jun Hyun

2010-01-01

Ion irradiation has been used for almost 40 years to emulate the effect of neutrons. Ion irradiation has a number of advantages in terms of time and expenses compared to neutron irradiation. Ion irradiation is expected to greatly contribute to the development of Fusion and Gen IV materials. Ions have short penetration depth, and they induce continuously varying dose rate over the penetration depth. Although it depends on the energy and species of incident ions, the depth of ion-irradiated region is in general on the order of a few micron meters. Depth controlled probing technique is required to measure the mechanical properties of ion-irradiated layer, and nanoindentation is widely used. During nanoindentation, a hard tip with known properties is pressed into a material which has unknown properties. The depth of penetration and load on the indenter are recorded during loading and unloading. The initial Loading depth curve follows the Hertzian elastic solution, and at a certain load, a sudden displacement excursion occurs in indenter depth and then hardening follows. This is called 'Pop-in' event, and since residual impression can be found only after pop-ins, the pop-in is regarded as the onset of plasticity. The objectives of this research are to investigate the effects of ion irradiation on popins, and to examine dislocation nucleation and propagation at the onset of plasticity by using MD simulations

Early Stage of Deformation under Nanoindenter Tip of Ion-irradiated Single Crystals

Energy Technology Data Exchange (ETDEWEB)

Shin, Chan Sun; Jin, Hyung Ha; Kwon, Jun Hyun [Korea Atomic Energy Research Institute, Daejeon (Korea, Republic of)

2010-10-15

Ion irradiation has been used for almost 40 years to emulate the effect of neutrons. Ion irradiation has a number of advantages in terms of time and expenses compared to neutron irradiation. Ion irradiation is expected to greatly contribute to the development of Fusion and Gen IV materials. Ions have short penetration depth, and they induce continuously varying dose rate over the penetration depth. Although it depends on the energy and species of incident ions, the depth of ion-irradiated region is in general on the order of a few micron meters. Depth controlled probing technique is required to measure the mechanical properties of ion-irradiated layer, and nanoindentation is widely used. During nanoindentation, a hard tip with known properties is pressed into a material which has unknown properties. The depth of penetration and load on the indenter are recorded during loading and unloading. The initial Loading depth curve follows the Hertzian elastic solution, and at a certain load, a sudden displacement excursion occurs in indenter depth and then hardening follows. This is called 'Pop-in' event, and since residual impression can be found only after pop-ins, the pop-in is regarded as the onset of plasticity. The objectives of this research are to investigate the effects of ion irradiation on popins, and to examine dislocation nucleation and propagation at the onset of plasticity by using MD simulations

Studies of defects on ion irradiated diamond

Energy Technology Data Exchange (ETDEWEB)

Lai, P.F.; Prawer, S.; Spargo, A.E.C.; Bursill, L.A. [Melbourne Univ., Parkville, VIC (Australia). School of Physics

1996-12-31

It is known that diamond is amorphized or graphitized when irradiated above a critical dose. Above this critical dose, D{sub c}, the resistance R is found to drop very rapidly due to the formation of graphite regions which overlap at D{sub c} to form a semi-continuous electrically conducting pathway through the sample. One particularly interesting method of studying this transformation is electron energy-loss spectroscopy (EELS). Using EELS, the different phases of carbon can be identified and distinguished from each other using the extended energy-loss fine structure (EXELFS) of the core-loss part of the spectrum. EELS is a sensitive method for determining the electronic structure of small areas of a sample. In this paper, transmission electron microscopy (TEM) and EELS measurements of the ion irradiated diamond were combined in an attempt to correlate the microstructural nature of the ion-beam induced damage to the changes in the electrical and other properties. 7 refs., 1 tab., 2 figs.

Studies of defects on ion irradiated diamond

Energy Technology Data Exchange (ETDEWEB)

Lai, P F; Prawer, S; Spargo, A E.C.; Bursill, L A [Melbourne Univ., Parkville, VIC (Australia). School of Physics

1997-12-31

It is known that diamond is amorphized or graphitized when irradiated above a critical dose. Above this critical dose, D{sub c}, the resistance R is found to drop very rapidly due to the formation of graphite regions which overlap at D{sub c} to form a semi-continuous electrically conducting pathway through the sample. One particularly interesting method of studying this transformation is electron energy-loss spectroscopy (EELS). Using EELS, the different phases of carbon can be identified and distinguished from each other using the extended energy-loss fine structure (EXELFS) of the core-loss part of the spectrum. EELS is a sensitive method for determining the electronic structure of small areas of a sample. In this paper, transmission electron microscopy (TEM) and EELS measurements of the ion irradiated diamond were combined in an attempt to correlate the microstructural nature of the ion-beam induced damage to the changes in the electrical and other properties. 7 refs., 1 tab., 2 figs.

Surface nanostructuring of TiO2 thin films by ion beam irradiation

International Nuclear Information System (INIS)

Romero-Gomez, P.; Palmero, A.; Yubero, F.; Vinnichenko, M.; Kolitsch, A.; Gonzalez-Elipe, A.R.

2009-01-01

This work reports a procedure to modify the surface nanostructure of TiO 2 anatase thin films through ion beam irradiation with energies in the keV range. Irradiation with N + ions leads to the formation of a layer with voids at a depth similar to the ion-projected range. By setting the ion-projected range a few tens of nanometers below the surface of the film, well-ordered nanorods appear aligned with the angle of incidence of the ion beam. Slightly different results were obtained by using heavier (S + ) and lighter (B + ) ions under similar conditions

Emittance measurements in low energy ion storage rings

Science.gov (United States)

Hunt, J. R.; Carli, C.; Resta-López, J.; Welsch, C. P.

2018-07-01

The development of the next generation of ultra-low energy antiproton and ion facilities requires precise information about the beam emittance to guarantee optimum performance. In the Extra-Low ENergy Antiproton storage ring (ELENA) the transverse emittances will be measured by scraping. However, this diagnostic measurement faces several challenges: non-zero dispersion, non-Gaussian beam distributions due to effects of the electron cooler and various systematic errors such as closed orbit offsets and inaccurate rms momentum spread estimation. In addition, diffusion processes, such as intra-beam scattering might lead to emittance overestimates. Here, we present algorithms to efficiently address the emittance reconstruction in presence of the above effects, and present simulation results for the case of ELENA.

M-line spectroscopic, spectroscopic ellipsometric and microscopic measurements of optical waveguides fabricated by MeV-energy N{sup +} ion irradiation for telecom applications

Energy Technology Data Exchange (ETDEWEB)

Bányász, I., E-mail: banyasz@sunserv.kfki.hu [Wigner Research Centre for Physics, Hungarian Academy of Sciences, P.O.B. 49, H-1525, Budapest (Hungary); Berneschi, S. [“Enrico Fermi” Center for Study and Research, Piazza del Viminale 2, 00184 Roma (Italy); MDF-Lab, “Nello Carrara” Institute of Applied Physics, IFAC-CNR, Via Madonna del Piano 10, 50019 Sesto Fiorentino (Italy); Fried, M.; Lohner, T. [Institute of Technical Physics and Materials Science, Research Centre for Natural Sciences, Hungarian Academy of Sciences, P.O.B. 49, H-1525, Budapest (Hungary); Conti, G. Nunzi; Righini, G.C.; Pelli, S. [MDF-Lab, “Nello Carrara” Institute of Applied Physics, IFAC-CNR, Via Madonna del Piano 10, 50019 Sesto Fiorentino (Italy); Zolnai, Z. [Institute of Technical Physics and Materials Science, Research Centre for Natural Sciences, Hungarian Academy of Sciences, P.O.B. 49, H-1525, Budapest (Hungary)

2013-08-31

Irradiation with N{sup +} ions of the 1.5–3.5 MeV energy range was applied to optical waveguide formation. Planar and channel waveguides have been fabricated in an Er-doped tungsten–tellurite glass, and in both types of bismuth germanate (BGO) crystals: Bi{sub 4}Ge{sub 3}O{sub 12} (eulytine) and Bi{sub 12}GeO{sub 20} (sillenite). Multi-wavelength m-line spectroscopy and spectroscopic ellipsometry were used for the characterisation of the ion beam irradiated waveguides. Planar waveguides fabricated in the Er-doped tungsten–tellurite glass using irradiation with N{sup +} ions at 3.5 MeV worked even at the 1550 nm telecommunication wavelength. 3.5 MeV N{sup +} ion irradiated planar waveguides in eulytine-type BGO worked up to 1550 nm and those in sillenite-type BGO worked up to 1330 nm. - Highlights: ► Waveguides were fabricated in glass and crystals using MeV energy N{sup +} ions. ► SRIM simulation and spectroscopic ellipsometry yielded similar waveguide structures. ► Multi-wavelength m-line spectroscopy was used to study the waveguides. ► Waveguides fabricated in an Er-doped tungsten–tellurite glass worked up to 1.5 μm. ► Waveguides in Bi{sub 12}GeO{sub 20} remained operative up to 1.5 μm.

A low-energy ion source for p-type doping in MBE

International Nuclear Information System (INIS)

Park, R.M.; Stanley, C.R.; Clampitt, R.

1980-01-01

A compact low-energy ion cell has been developed for use as a source of acceptor impurities for the growth of p-type semiconductor material in ultra-high vacuum by molecular beam epitaxy. A flux of either zinc or cadmium atoms is emitted under molecular effusion conditions and partially ionised in the orifice of the cell by electron bombardment. The design provides for control of both the ion energy and current at constant cell temperature. (100)InP has been grown by MBE in a flux of 1 keV Zn ions. The surface morphology and crystal structure show no degradation when compared with (100)InP grown without the Zn ions present. (author)

Development of heavy-ion irradiation technique for single-event in semiconductor devices

Energy Technology Data Exchange (ETDEWEB)

Nemoto, Norio; Akutsu, Takao; Matsuda, Sumio [National Space Development Agency of Japan, Tsukuba, Ibaraki (Japan). Tsukuba Space Center; Naitoh, Ichiro; Itoh, Hisayoshi; Agematsu, Takashi; Kamiya, Tomihiro; Nashiyama, Isamu

1997-03-01

Heavy-ion irradiation technique has been developed for the evaluation of single-event effects on semiconductor devices. For the uniform irradiation of high energy heavy ions to device samples, we have designed and installed a magnetic beam-scanning system in a JAERI cyclotron beam course. It was found that scanned area was approximately 4 x 2 centimeters and that the deviation of ion fluence from the average value was less than 7%. (author)

The influence of fractionation on cell survival and premature differentiation after carbon ion irradiation

International Nuclear Information System (INIS)

Wang Jufang; Li Renming; Guo Chuanling; Fournier, C.; K-Weyrather, W.

2008-01-01

To investigate the influence of fractionation on cell survival and radiation induced premature differentiation as markers for early and late effects after X-rays and carbon irradiation. Normal human fibroblasts NHDF, AG1522B and WI-38 were irradiated with 250 kV X-rays, or 266 MeV/u, 195 MeV/u and 11 MeV/u carbon ions. Cytotoxicity was measured by a clonogenic survival assay or by determination of the differentiation pattern. Experiments with high-energy carbon ions show that fractionation induced repair effects are similar to photon irradiation. The relative biological effective (RBE) 10 values for clonogenic survival are 1.3 and 1.6 for irradiation in one or two fractions for NHDF cells and around 1.2 for AG1522B cells regardless of the fractionation scheme. The RBE for a doubling of post mitotic fibroblasts (PMF) in the population is 1 for both single and two fractionated irradiation of NHDF cells. Using 11 MeV/u carbon ions, no repair effect can be seen in WI-38 cells. The RBE 10 for clonogenic survival is 3.2 for single irradiation and 4.9 for two fractionated irradiations. The RBE for a doubling of PMF is 3.1 and 5.0 for single and two fractionated irradiations, respectively. For both cell lines the effects of high-energy carbon ions representing the irradiation of the skin and the normal tissue in the entrance channel are similar to the effects of X-rays. The fractionation effects are maintained. For the lower energy, which is representative for the irradiation of the tumor region, RBE is enhanced for clonogenic survival as well as for premature terminal differentiation. Fractionation effects are not detectable. Consequently, the therapeutic ratio is significantly enhanced by fractionated irradiation with carbon ions. (author)

Basic Design Study on 1-MV Electrostatic Accelerator for ion irradiation

International Nuclear Information System (INIS)

Cho, Yongsub; Kim, Kyeryung; Lee, Chanyoung

2014-01-01

The KOMAC (KOrea Multi-purpose Accelerator Complex) has electrostatic ion accelerators whose terminal voltages are less than 100kV. To extend ion beam irradiations with higher energy ions for industrial purposes, an electrostatic accelerator of 1-MV terminal voltage should have been studied. For industrial applications, the most important features of the accelerator are high current and high reliability for high irradiation dose and high through-put with high current and long irradiation time. The basic study on 1-MV electrostatic ion accelerator for industrial applications has been done. The key components are a high voltage power supply, an ion source, and an accelerating column. The feasibility study for fabrication is being performed. Especially the R and D for ion source is required. The 1-MV ion accelerator will be constructed with domestic companies and installed in the beam application research building, which is under construction in the site of KOMAC at Gyeongju

High-intensity low energy titanium ion implantation into zirconium alloy

Science.gov (United States)

Ryabchikov, A. I.; Kashkarov, E. B.; Pushilina, N. S.; Syrtanov, M. S.; Shevelev, A. E.; Korneva, O. S.; Sutygina, A. N.; Lider, A. M.

2018-05-01

This research describes the possibility of ultra-high dose deep titanium ion implantation for surface modification of zirconium alloy Zr-1Nb. The developed method based on repetitively pulsed high intensity low energy titanium ion implantation was used to modify the surface layer. The DC vacuum arc source was used to produce metal plasma. Plasma immersion titanium ions extraction and their ballistic focusing in equipotential space of biased electrode were used to produce high intensity titanium ion beam with the amplitude of 0.5 A at the ion current density 120 and 170 mA/cm2. The solar eclipse effect was used to prevent vacuum arc titanium macroparticles from appearing in the implantation area of Zr sample. Titanium low energy (mean ion energy E = 3 keV) ions were implanted into zirconium alloy with the dose in the range of (5.4-9.56) × 1020 ion/cm2. The effect of ion current density, implantation dose on the phase composition, microstructure and distribution of elements was studied by X-ray diffraction, scanning electron microscopy and glow-discharge optical emission spectroscopy, respectively. The results show the appearance of Zr-Ti intermetallic phases of different stoichiometry after Ti implantation. The intermetallic phases are transformed from both Zr0.7Ti0.3 and Zr0.5Ti0.5 to single Zr0.6Ti0.4 phase with the increase in the implantation dose. The changes in phase composition are attributed to Ti dissolution in zirconium lattice accompanied by the lattice distortions and appearance of macrostrains in intermetallic phases. The depth of Ti penetration into the bulk of Zr increases from 6 to 13 μm with the implantation dose. The hardness and wear resistance of the Ti-implanted zirconium alloy were increased by 1.5 and 1.4 times, respectively. The higher current density (170 mA/cm2) leads to the increase in the grain size and surface roughness negatively affecting the tribological properties of the alloy.

Susceptible genes and molecular pathways related to heavy ion irradiation in oral squamous cell carcinoma cells

International Nuclear Information System (INIS)

Fushimi, Kazuaki; Uzawa, Katsuhiro; Ishigami, Takashi; Yamamoto, Nobuharu; Kawata, Tetsuya; Shibahara, Takahiko; Ito, Hisao; Mizoe, Jun-etsu; Tsujii, Hirohiko; Tanzawa, Hideki

2008-01-01

Background and purpose: Heavy ion beams are high linear energy transfer (LET) radiation characterized by a higher relative biologic effectiveness than low LET radiation. The aim of the current study was to determine the difference of gene expression between heavy ion beams and X-rays in oral squamous cell carcinoma (OSCC)-derived cells. Materials and methods: The OSCC cells were irradiated with accelerated carbon or neon ion irradiation or X-rays using three different doses. We sought to identify genes the expression of which is affected by carbon and neon ion irradiation using Affymetrix GeneChip analysis. The identified genes were analyzed using the Ingenuity Pathway Analysis Tool to investigate the functional network and gene ontology. Changes in mRNA expression in the genes were assessed by real-time quantitative reverse transcriptase-polymerase chain reaction (qRT-PCR). Results: The microarray analysis identified 84 genes that were modulated by carbon and neon ion irradiation at all doses in OSCC cells. Among the genes, three genes (TGFBR2, SMURF2, and BMP7) and two genes (CCND1 and E2F3), respectively, were found to be involved in the transforming growth factor β-signaling pathway and cell cycle:G1/S checkpoint regulation pathway. The qRT-PCR data from the five genes after heavy ion irradiation were consistent with the microarray data (P < 0.01). Conclusion: Our findings should serve as a basis for global characterization of radiation-regulated genes and pathways in heavy ion-irradiated OSCC

Generation of colour centres in yttria-stabilized zirconia by heavy ion irradiations in the GeV range

International Nuclear Information System (INIS)

Costantini, Jean-Marc; Beuneu, Francois; Schwartz, Kurt; Trautmann, Christina

2010-01-01

We have studied the colour centre production in yttria-stabilized zirconia (ZrO 2 :Y 3+ ) by heavy ion irradiation in the GeV range using on-line UV-visible optical absorption spectroscopy. Experiments were performed with 11.4 MeV amu -1 127 Xe, 197 Au, 208 Pb and 238 U ion irradiations at 8 K or room temperature (RT). A broad and asymmetrical absorption band peaked at a wavelength about 500 nm is recorded regardless of the irradiation parameters, in agreement with previous RT irradiations with heavy ions in the 100 MeV range. This band is de-convoluted into two broad Gaussian-shaped bands centred at photon energies about 2.4 and 3.1 eV that are respectively associated with the F + -type centres (involving a singly ionized oxygen vacancy, V O · ) and T centres (i.e. Zr 3+ in a trigonal symmetry) observed by electron paramagnetic resonance (EPR) spectroscopy. In the case of 8 K Au ion irradiation at low fluences, six bands are used at about 1.9, 2.3, 2.7, 3.1 and 4.0 eV. The three bands near 2.0-2.5 eV can be assigned to oxygen divacancies (i.e. F 2 + centres). No significant effect of the irradiation temperature is found on the widths of all absorption bands for the same ion and fluence. This is attributed to the inhomogeneous broadening arising from the static disorder due to the native charge-compensating oxygen vacancies. However, the colour centre production yield is strongly enhanced at 8 K with respect to RT. When heating irradiated samples from 8 K to RT, the extra colour centres produced at low temperature do not recover completely to the level of RT irradiation. The latter results are accounted for by an electronically driven defect recovery process.

Microanalysis on the Hydrogen Ion Irradiated 50 wt pct TiC-C Films

Institute of Scientific and Technical Information of China (English)

Hui JIANG; Yaoguang LIU; Ningkang HUANG

2007-01-01

The 50 wt pct TiC-C films were prepared on stainless steel substrates by using a technique of ion beam mixing.These films were irradiated by hydrogen ion beam with a dose of 1×1018 ions/cm2 and an energy of 5 keV.Microanalysis of X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectroscopy (SIMS) were used to analyze the films before and after hydrogen ion irradiation and to study the mechanism of hydrogen resistance.

Effects of high energy (MeV) ion beam irradiation on polyethylene terephthalate

International Nuclear Information System (INIS)

Singh, Nandlal; Sharma, Anita; Avasthi, D.K.

2003-01-01

Irradiation effects of 50 MeV Li 3+ ion beams in polyethylene terephthalate (PET) films were studied with respect to their structural and electrical properties by using Fourier transform infrared (FTIR) spectroscopy and ac electrical measurement in the frequency range: 50-100 kHz at different temperatures of 30-150 deg. C. It is found that ac resistivity of PET decreases as frequency increases. The temperature dependencies of dielectric loss tangent exhibit a peak (T g ) at 60 deg. C. The capacitance value of irradiated PET is almost temperature independent and ones increases with an increasing of lithium fluence. FTIR spectra show various bands related to C-H, C-O, C-O-C molecular bonds and groups which get modified or break down due to ion beam irradiation

High-fluence hyperthermal ion irradiation of gallium nitride surfaces at elevated temperatures

Energy Technology Data Exchange (ETDEWEB)

Finzel, A.; Gerlach, J.W., E-mail: juergen.gerlach@iom-leipzig.de; Lorbeer, J.; Frost, F.; Rauschenbach, B.

2014-10-30

Highlights: • Irradiation of gallium nitride films with hyperthermal nitrogen ions. • Surface roughening at elevated sample temperatures was observed. • No thermal decomposition of gallium nitride films during irradiation. • Asymmetric surface diffusion processes cause local roughening. - Abstract: Wurtzitic GaN films deposited on 6H-SiC(0001) substrates by ion-beam assisted molecular-beam epitaxy were irradiated with hyperthermal nitrogen ions with different fluences at different substrate temperatures. In situ observations with reflection high energy electron diffraction showed that during the irradiation process the surface structure of the GaN films changed from two dimensional to three dimensional at elevated temperatures, but not at room temperature. Atomic force microscopy revealed an enhancement of nanometric holes and canyons upon the ion irradiation at higher temperatures. The roughness of the irradiated and heated GaN films was clearly increased by the ion irradiation in accordance with x-ray reflectivity measurements. A sole thermal decomposition of the films at the chosen temperatures could be excluded. The results are discussed taking into account temperature dependent sputtering and surface uphill adatom diffusion as a function of temperature.

Phenomenological understanding of dewetting and embedding of noble metal nanoparticles in thin films induced by ion irradiation

Energy Technology Data Exchange (ETDEWEB)

Prakash, Jai, E-mail: jai.gupta1983@gmail.com [Department of Chemistry, MMH College (Ch. Charan Singh University Meerut), Ghaiziabad 201001 (India); Chemical Physics of Materials, Université Libre de Bruxelles, Campus de la Plaine, CP 243, B-1050 Bruxelles (Belgium); Tripathi, A. [Inter University Accelerator Centre, Aruna Asif Ali Marg, New Delhi 110067 (India); Gautam, Sanjeev; Chae, K.H.; Song, Jonghan [Advanced Analysis Center, Korea Institute of Science and Technology, Seoul 136–791 (Korea, Republic of); Rigato, V. [INFN Laboratori Nazionali di Legnaro, Via Romea. 4, 35020 Legnaro, Padova (Italy); Tripathi, Jalaj [Department of Chemistry, MMH College (Ch. Charan Singh University Meerut), Ghaiziabad 201001 (India); Asokan, K. [Inter University Accelerator Centre, Aruna Asif Ali Marg, New Delhi 110067 (India)

2014-10-15

The present experimental work provides the phenomenological approach to understand the dewetting in thin noble metal films with subsequent formation of nanoparticles (NPs) and embedding of NPs induced by ion irradiation. Au/polyethyleneterepthlate (PET) bilayers were irradiated with 150 keV Ar ions at varying fluences and were studied using scanning electron microscopy (SEM) and cross-sectional transmission electron microscopy (X-TEM). Thin Au film begins to dewet from the substrate after irradiation and subsequent irradiation results in spherical nanoparticles on the surface that at a fluence of 5 × 10{sup 16} ions/cm{sup 2} become embedded into the substrate. In addition to dewetting in thin films, synthesis and embedding of metal NPs by ion irradiation, the present article explores fundamental thermodynamic principles that govern these events systematically under the effect of irradiation. The results are explained on the basis of ion induced sputtering, thermal spike inducing local melting and of thermodynamic driving forces by minimization of the system free energy where contributions of surface and interfacial energies are considered with subsequent ion induced viscous flow in substrate. - Highlights: • Phenomenological interpretation of dewetting and embedding of metal NPs in thin film. • Exploring fundamental thermodynamic principles under influence of ion irradiation. • Ion induced surface/interface microstructural changes using SEM/X-TEM. • Ion induced sputtering, thermal spike induced local melting. • Thermodynamic driving forces relate to surface and interfacial energies.

Photocarrier Radiometry for Non-contact Evaluation of Monocrystalline Silicon Solar Cell Under Low-Energy (< 200 keV) Proton Irradiation

Science.gov (United States)

Oliullah, Md.; Liu, J. Y.; Song, P.; Wang, Y.

2018-06-01

A three-layer theoretical model is developed for the characterization of the electronic transport properties (lifetime τ, diffusion coefficient D, and surface recombination velocity s) with energetic particle irradiation on solar cells using non-contact photocarrier radiometry. Monte Carlo (MC) simulation is carried out to obtain the depth profiles of the proton irradiation layer at different low energies (solar cells are investigated under different low-energy proton irradiation, and the carrier transport parameters of the three layers are obtained by best-fitting of the experimental results. The results show that the low-energy protons have little influence on the transport parameters of the non-irradiated layer, but high influences on both of the p and n-region irradiation layers which are consisted of MC simulation.

Morphological change of self-organized protrusions of fluoropolymer surface by ion beam irradiation

International Nuclear Information System (INIS)

Kitamura, Akane; Kobayashi, Tomohiro; Satoh, Takahiro; Koka, Masashi; Kamiya, Tomihiro; Suzuki, Akihiro; Terai, Takayuki

2013-01-01

Polytetrafluoroethylene (PTFE) and fluorinated ethylene propylene (FEP) are typical fluoropolymers displaying several desirable technological properties such as electrical insulation and high chemical resistance. When their surfaces are irradiated with ion beams, dense micro-protrusions formed after the emergence and spread of micropores across the entire irradiated area, allowing culture cells to spread on the top of the protrusions. In this study, we investigate the morphological changes introduced in the fluoropolymer surfaces by ion beams as the energy of the beams is increased. When an FEP sample was irradiated with a nitrogen ion beam with an energy of less than 350 keV at 1.0 μA/cm 2 , protrusions were formed with a density between 2 × 10 7 /cm 2 and 2 × 10 8 /cm 2 . However, at energies higher than 350 keV, the protrusions became sparse, and the density dropped to 5 × 10 2 /cm 2 . Protrusions appeared sporadically during irradiation at high energies, and the top of the protrusions appeared as spots inside the sample, which were difficult to etch and became elongated as the erosion of the surface progressed. Erosion was caused by sputtering of FEP molecules and evaporation at notably elevated temperatures on the surface. Analysis based on attenuated total reflectance/Fourier transform infrared spectroscopy showed the presence of C=C bonds as well as –COOH, –C=O, and –OH bonds on all irradiated samples. Their concentration on the surface densely covered with micro-protrusions was higher than that on the surface with sparse protrusions after irradiation at energies exceeding 350 keV. Thus, we determined a suitable range for the ion energy for creating FEP surfaces densely covered with protrusions

A study on the ranges of low energy ions in biological samples and its mechanism of biological effects

International Nuclear Information System (INIS)

Lu Ting; Xie Liqing; Li Junping; Xia Ji

1993-01-01

The seeds of wheat and bean are irradiated by iron ion beam with energy 100 keV. The RBS spectra of the samples are observed and the ranges and distributions of the iron ions in the wheat and bean are calculated theoretically by means of Monte Carlo method. The results of theory and experiment are compared and the mechanism of biological effects induced by ion is discussed

Calorimetric low-temperature detectors on semiconductor base for the energy-resolving detection of heavy ions

International Nuclear Information System (INIS)

Kienlin, A. von.

1994-01-01

In the framework of this thesis for the first time calorimetric low-temperature detectors for the energy-resolving detection of heavy ions were developed and successfully applied. Constructed were two different detector types, which work both with a semiconductor thermistor. The temperature increasement effected by a particle incidence is read out. In the first detector type the thermistor was simutaneously used as absorber. The thickness of the germanium crystals was sufficient in order to stop the studied heavy ions completely. In the second type, a composed calorimeter, a sapphire crystal, which was glued on a germanium thermistor, served as absorber for the incident heavy ions. The working point of the calorimeter lies in the temperature range (1.2-4.2 K), which is reachable with a pumped 4 He cryostat. The temperatur increasement of the calorimeter amounts after the incidence of a single α particle about 20-30 μK and that after a heavy ion incidence up to some mK. An absolute energy resolution of 400-500 keV was reached. In nine beam times the calorimeters were irradiated by heavy ions ( 20 Ne, 40 Ar, 136 Xe, 208 Pb, 209 Bi) of different energies (3.6 MeV/nucleon< E<12.5 MeV/nucleon) elastically scattered from gold foils. In the pulse height spectra of the first detector type relatively broad, complex-structurated line shapes were observed. By systematic measurements dependences of the complex line structures on operational parameters of the detector, the detector temperature, and the position of the incident particle could be detected. Together with the results of further experiments a possible interpretation of these phenomena is presented. Contrarily to the complex line structures of the pure germanium thermistor the line shapes in the pulse height spectra, which were taken up in a composite germanium/sapphire calorimeter, are narrow and Gauss-shaped

Structural stability of C60 films under irradiation with swift heavy ions

International Nuclear Information System (INIS)

Jin Yunfan; Yao Cunfeng; Wang Zhiguang; Xie Erqing; Song Yin; Sun Youmei; Zhang Chonghong; Liu Jie; Duan Jinglai

2005-01-01

In order to investigate the structural stability of fullerene (C 60 ) under swift heavy ion irradiation, the irradiation experiments of thin C 60 films were performed with 22 MeV/amu Fe 56 ions delivered by HIRFL at Lanzhou in China. The irradiated C 60 films were analyzed by means of Raman scattering and Fourier transform infrared (FTIR) spectroscopes. The analysis results indicated that the damage cross-sections σ of the C 60 molecule deduced from the data of the Raman spectra are between 1.1 and 4.5 x 10 -14 cm 2 for the electronic energy loss from 3.5 to 8.7 keV/nm and electronic energy transfer dominates the damage process of C 60 films. The partial recovery of the damage in irradiated C 60 films at certain electronic energy loss is attributed to an annealing effect of strong electronic excitation

Study of uranium dioxyde sputtering induced by multicharged heavy ions at low and very low kinetic energy: projectile charge effect

International Nuclear Information System (INIS)

Haranger, F.

2003-12-01

Ion beam irradiation of a solid can lead to the emission of neutral or ionized atoms, molecules or clusters from the surface. This comes as a result of the atomic motion in the vicinity of the surface, induced by the transfer of the projectile energy. Then, the study of the sputtering process appears as a means to get a better understanding of the excited matter state around the projectile trajectory. In the case of slow multicharged ions, a strong electronic excitation can be achieved by the projectile neutralization above the solid surface and / or its deexcitation below the surface. Parallel to this, the slowing down of such ions is essentially related to elastic collision with the target atoms. The study of the effect of the initial charge state of slow multicharged ions, in the sputtering process, has been carried out by measuring the absolute angular distributions of emission of uranium atoms from a uranium dioxide surface. The experiments have been performed in two steps. First, the emitted particles are collected onto a substrate during irradiation. Secondly, the surface of the collectors is analyzed by Rutherford Backscattering Spectrometry (RBS). This method allows the characterization of the emission of neutrals, which are the vast majority of the sputtered particles. The results obtained provide an access to the evolution of the sputtering process as a function of xenon projectile ions charge state. The measurements have been performed over a wide kinetic energy range, from 81 down to 1.5 keV. This allowed a clear separation of the contribution of the kinetic energy and initial projectile charge state to the sputtering phenomenon. (author)

Irradiation effects of swift heavy ions on gallium arsenide, silicon and silicon diodes

International Nuclear Information System (INIS)

Bhoraskar, V.N.

2001-01-01

The irradiation effects of high energy lithium, boron, oxygen and silicon ions on crystalline silicon, gallium arsenide, porous silicon and silicon diodes were investigated. The ion energy and fluence were varied over the ranges 30 to 100 MeV and 10 11 to 10 14 ions/cm 2 respectively. Semiconductor samples were characterized with the x-ray fluorescence, photoluminescence, thermally stimulated exo-electron emission and optical reflectivity techniques. The life-time of minority carriers in crystalline silicon was measured with a pulsed electron beam and the lithium depth distribution in GaAs was measured with the neutron depth profiling technique. The diodes were characterized through electrical measurements. The results of optical reflectivity, life-time of minority carriers and photoluminescence show that swift heavy ions induce defects in the surface region of crystalline silicon. In the ion-irradiated GaAs, migration of silicon, oxygen and lithium atoms from the buried region towards the surface was observed, with orders of magnitude enhancement in the diffusion coefficients. Enhancement in the photoluminescence intensity was observed in the GaAs and porous silicon samples that, were irradiated with silicon ions. The trade-off between the turn-off time and the voltage, drop in diodes irradiated with different swift heavy ions was also studied. (author)

Development of a single ion micro-irradiation facility for experimental radiobiology at cell level; Developpement d'une ligne d'irradiation microfaisceau en mode ion par ion pour la radiobiologie experimentale a l'echelle cellulaire

Energy Technology Data Exchange (ETDEWEB)

Barberet, Ph

2003-10-01

A micro-irradiation device has been developed for radiobiology applications at the scale of the cell. This device is based on an upgrade of an existing micro-beam line that was already able to deliver a 1 to 3 MeV proton or alpha beam of low intensity and whose space resolution is lower than 1 micrometer in vacuum. The important part of this work has been the development of an irradiation stage designed to fit on the micro-probe and able to deliver ions in the air with an absolute accuracy of a few micrometers. A program has been set up to monitor the complete irradiation line in testing and in automatic irradiation operating phases. Simulation tools based on Monte-Carlo calculations have been validated through comparisons with experimental data particularly in the field of spatial resolution and of the number of ions delivered. The promising results show the possibility in a near future to use this tool to study the response of cells to very low irradiation doses down to the extreme limit of one ion per cell.

Extraction design and low energy beam transport optimization of space charge dominated multispecies ion beam sources

International Nuclear Information System (INIS)

Delferriere, O.; De Menezes, D.