Nuclear structure studies with low-energy light ions: fundamental and applied

International Nuclear Information System (INIS)

Mazumdar, I.

2016-01-01

Studies in low and medium energy nuclear physics have been dominated by heavy-ion induced reactions for last five decades. Heavy-ion induced nuclear reactions have enriched our knowledge of the structural evolutions and intricacies of reaction dynamics of the nuclear many-body systems. However, the emergence and rise of heavy-ion physics have seen a general decline in studies with low- and medium-energy light-ion beams. The harsh reality of dwindling number of low-energy light ion facilities adversely affect research in nuclear physics. Very low-energy and high current light-ion facilities immediately conjures up in our minds the studies in nuclear astrophysics. Measurements of light-ion capture cross sections and astrophysical S factors are the major themes of research at most of the light-ion facilities. However, the importance low energy light-ion beams is multifarious. A variety of measurements providing vital support and inputs to heavy-ion research can only be carried out at the low-energy, light-ion facilities. Light-ion beams are also useful for generation of mono-energetic neutron beams. In this talk I will draw from some of our recent measurements to show the importance of light-ion beams in nuclear astrophysics and also in applied nuclear physics. (author)

Engineering Vibrationally Assisted Energy Transfer in a Trapped-Ion Quantum Simulator

Science.gov (United States)

Gorman, Dylan J.; Hemmerling, Boerge; Megidish, Eli; Moeller, Soenke A.; Schindler, Philipp; Sarovar, Mohan; Haeffner, Hartmut

2018-01-01

Many important chemical and biochemical processes in the condensed phase are notoriously difficult to simulate numerically. Often, this difficulty arises from the complexity of simulating dynamics resulting from coupling to structured, mesoscopic baths, for which no separation of time scales exists and statistical treatments fail. A prime example of such a process is vibrationally assisted charge or energy transfer. A quantum simulator, capable of implementing a realistic model of the system of interest, could provide insight into these processes in regimes where numerical treatments fail. We take a first step towards modeling such transfer processes using an ion-trap quantum simulator. By implementing a minimal model, we observe vibrationally assisted energy transport between the electronic states of a donor and an acceptor ion augmented by coupling the donor ion to its vibration. We tune our simulator into several parameter regimes and, in particular, investigate the transfer dynamics in the nonperturbative regime often found in biochemical situations.

Mechanism of long-range penetration of low-energy ions in botanic samples

International Nuclear Information System (INIS)

Liu Feng; Wang Yugang; Xue Jianming; Wang Sixue; Du Guanghua; Yan Sha; Zhao Weijiang

2002-01-01

The authors present experimental evidence to reveal the mechanism of long-range penetration of low-energy ions in botanic samples. In the 100 keV Ar + ion transmission measurement, the result confirmed that low-energy ions could penetrate at least 60 μm thick kidney bean slices with the probability of about 1.0 x 10 -5 . The energy spectrum of 1 MeV He + ions penetrating botanic samples has shown that there is a peak of the count of ions with little energy loss. The probability of the low-energy ions penetrating the botanic sample is almost the same as that of the high-energy ions penetrating the same samples with little energy loss. The results indicate that there are some micro-regions with mass thickness less than the projectile range of low-energy ions in the botanic samples and they result in the long-range penetration of low-energy ions in botanic samples

Low energy ion beam dynamics of NANOGAN ECR ion source

Energy Technology Data Exchange (ETDEWEB)

Kumar, Sarvesh, E-mail: sarvesh@iuac.res.in; Mandal, A.

2016-04-01

A new low energy ion beam facility (LEIBF) has been developed for providing the mass analyzed highly charged intense ion beams of energy ranging from a few tens of keV to a few MeV for atomic, molecular and materials sciences research. The new facility consists of an all permanent magnet 10 GHz electron cyclotron resonance (ECR) ion source (NANOGAN) installed on a high voltage platform (400 kV) which provides large currents of multiply charged ion beams. Higher emittance at low energy of intense ion beam puts a tremendous challenge to the beam optical design of this facility. The beam line consists of mainly the electrostatic quadrupoles, an accelerating section, analyzing cum switching magnet and suitable beam diagnostics including vacuum components. The accelerated ion beam is analyzed for a particular mass to charge (m/q) ratio as well as guided to three different lines along 75°, 90° and 105° using a large acceptance analyzing cum switching magnet. The details of transverse beam optics to all the beam lines with TRANSPORT and GICOSY beam optics codes are being described. Field computation code, OPERA 3D has been utilized to design the magnets and electrostatic quadrupoles. A theoretical estimation of emittance for optimized geometry of ion source is given so as to form the basis of beam optics calculations. The method of quadrupole scan of the beam is used to characterize the emittance of the final beam on the target. The measured beam emittance increases with m/q ratios of various ion beams similar to the trend observed theoretically.

Damage of copper by low energy xenon ions

International Nuclear Information System (INIS)

Babad-Zakhryapin, A.A.; Popenko, V.A.

1988-01-01

Changes in the copper crystal structure bombarded by xenon ions with 30-150 eV energy are studied. Foils of MOb copper mark, 10 mm in diameter and 100 μm thickness, are irradiated. The initial specimens are annealed in vacuum during 1 h at 900 K temperature. The specimens are bombarded by xenon ions in a water-cooled holder. A TE-O type accelerator serves as a xenon ion source. The ion energy varies within 30 to 150 eV range. The ion flux density is 8x10 16 ion/(cm 2 xs). It is shown that crystal structure variations at deep depths are observed not only at high (>1 keV), but at low ion energies down to several dozens of electronvolt as well. The crystal structure variation on copper irradiation by xenon ions with 30-150 eV energy is followed by formation of defects like dislocation loops, point defects in the irradiated target bulk

Construction, characterization and applications of a compact mass-resolved low-energy ion beam system

International Nuclear Information System (INIS)

Lau, W.M.; Feng, X.; Bello, I.; Sant, S.; Foo, K.K.; Lawson, R.P.W.

1991-01-01

A compact mass-resolved low-energy ion beam system has been constructed in which ions are extracted from a Colutron ion source, focused by an einzel lens, mass-selected by a Wien filter, refocused by a second einzel lens into an ultrahigh vacuum target chamber, and finally decelerated with a five-electrode lens. The design of the deceleration lens was assisted by computer simulation including space-charge effects with an ion trajectory software (CHDEN). The system performance has been characterized with a quadrupole mass spectrometer and an energy analyzer along the beam axis. For example, argon ions can be transported at keV and decelerated to 10 eV with an energy spread of ±0.5 eV. The total current measured by a Faraday cage at the exit of the deceleration lens in the energy range of 10-200 eV is about 1-5 μA. The ion current density was higher than 100 μA/cm 2 at 50 eV but decreased to 10-20 μA/cm 2 at 10 eV. The mass resolution was estimated to be 40 under the present operation configuration. The system has been used to produce interesting results in both ion beam etching and deposition. (orig.)

Ultralow energy ion beam surface modification of low density polyethylene.

Science.gov (United States)

Shenton, Martyn J; Bradley, James W; van den Berg, Jaap A; Armour, David G; Stevens, Gary C

2005-12-01

Ultralow energy Ar+ and O+ ion beam irradiation of low density polyethylene has been carried out under controlled dose and monoenergetic conditions. XPS of Ar+-treated surfaces exposed to ambient atmosphere show that the bombardment of 50 eV Ar+ ions at a total dose of 10(16) cm(-2) gives rise to very reactive surfaces with oxygen incorporation at about 50% of the species present in the upper surface layer. Using pure O+ beam irradiation, comparatively low O incorporation is achieved without exposure to atmosphere (approximately 13% O in the upper surface). However, if the surface is activated by Ar+ pretreatment, then large oxygen contents can be achieved under subsequent O+ irradiation (up to 48% O). The results show that for very low energy (20 eV) oxygen ions there is a dose threshold of about 5 x 10(15) cm(-2) before surface oxygen incorporation is observed. It appears that, for both Ar+ and O+ ions in this regime, the degree of surface modification is only very weakly dependent on the ion energy. The results suggest that in the nonequilibrium plasma treatment of polymers, where the ion flux is typically 10(18) m(-2) s(-1), low energy ions (<50 eV) may be responsible for surface chemical modification.

Low-energy ion beam extraction and transport: Experiment--computer comparison

International Nuclear Information System (INIS)

Spaedtke, P.; Brown, I.; Fojas, P.

1994-01-01

Ion beam formation at low energy (∼1 keV or so) is more difficult to accomplish than at high energy because of beam blowup by space-charge forces in the uncompensated region within the extractor, an effect which is yet more pronounced for heavy ions and for high beam current density. For the same reasons, the extracted ion beam is more strongly subject to space charge blowup than higher energy beams if it is not space-charge neutralized to a high degree. A version of vacuum arc ion source with an extractor that produces low-energy metal ion beams at relatively high current (∼0.5--10 kV at up to ∼100 mA) using a multi-aperture, accel--decel extractor configuration has been created. The experimentally observed beam extraction characteristics of this source is compared with those predicted using the AXCEL-INP code, and the implied downstream beam transport with theoretical expectations. It is concluded that the low-energy extractor performance is in reasonable agreement with the code, and that good downstream space charge neutralization is obtained. Here, the code and the experimental results are described, and the features that contribute to good low-energy performance are discussed

Luminescence model with quantum impact parameter for low energy ions

CERN Document Server

Cruz-Galindo, H S; Martínez-Davalos, A; Belmont-Moreno, E; Galindo, S

2002-01-01

We have modified an analytical model of induced light production by energetic ions interacting in scintillating materials. The original model is based on the distribution of energy deposited by secondary electrons produced along the ion's track. The range of scattered electrons, and thus the energy distribution, depends on a classical impact parameter between the electron and the ion's track. The only adjustable parameter of the model is the quenching density rho sub q. The modification here presented, consists in proposing a quantum impact parameter that leads to a better fit of the model to the experimental data at low incident ion energies. The light output response of CsI(Tl) detectors to low energy ions (<3 MeV/A) is fitted with the modified model and comparison is made to the original model.

Measurement of ultra-low ion energy of decelerated ion beam using a deflecting electric field

Energy Technology Data Exchange (ETDEWEB)

Thopan, P.; Suwannakachorn, D.; Tippawan, U. [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Yu, L.D., E-mail: yuld@thep-center.org [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Thailand Center of Excellence in Physics, Commission on Higher Education, 328 Si Ayutthaya Road, Bangkok 10400 (Thailand)

2015-12-15

In investigation on ultra-low-energy ion bombardment effect on DNA, an ion beam deceleration lens was developed for high-quality ultra-low-energy ion beam. Measurement of the ion energy after deceleration was necessary to confirm the ion beam really decelerated as theoretically predicted. In contrast to conventional methods, this work used a simple deflecting electrostatic field after the deceleration lens to bend the ion beam. The beam bending distance depended on the ion energy and was described and simulated. A system for the measurement of the ion beam energy was constructed. It consisted of a pair of parallel electrode plates to generate the deflecting electrical field, a copper rod measurement piece to detect ion beam current, a vernier caliper to mark the beam position, a stepping motor to translate the measurement rod, and a webcam-camera to read the beam bending distance. The entire system was installed after the ion-beam deceleration lens inside the large chamber of the bioengineering vertical ion beam line. Moving the measurement rod across the decelerated ion beam enabled to obtain beam profiles, from which the beam bending distance could be known and the ion beam energy could be calculated. The measurement results were in good agreement with theoretical and simulated results.

Heavy ion reactions at low energies

International Nuclear Information System (INIS)

Nemes, M.C.

1985-01-01

Some general features of the heavy ion reactions at low energies are presented. Some kinds of processes are studied, such as: elastic scattering, peripherical reactions, deep inelastic collisions and fusion. Both, theoretical and experimental perspectives on this field are discussed. (L.C.) [pt

Enhancements to the Low-Energy Ion Facility at SUNY Geneseo

Science.gov (United States)

Barfield, Zachariah; Kostick, Steven; Nagasing, Ethan; Fletcher, Kurt; Padalino, Stephen

2017-10-01

The Low Energy Ion Facility at SUNY Geneseo is used for detector development and characterization for inertial confinement fusion diagnostics. The system has been upgraded to improve the ion beam quality by reducing contaminant ions. In the new configuration, ions produced by the Peabody Scientific duoplasmatron ion source are accelerated through a potential, focused into a new NEC analyzing magnet and directed to an angle of 30°. A new einzel lens on the output of the magnet chamber focuses the beam into a scattering chamber with a water-cooled target mount and rotatable detector mount plates. The analyzing magnet has been calibrated for deuteron, 4He+, and 4He2+ ion beams at a range of energies, and no significant hysteresis has been observed. The system can accelerate deuterons to energies up to 25 keV to initiate d-d fusion using a deuterated polymer target. Charged particle spectra with protons, tritons, and 3He ions from d-d fusion have been measured at scattering angles ranging from 55° to 135°. A time-of-flight beamline has been designed to measure the energies of ions elastically scattered at 135°. CEM detectors initiate start and stop signals from secondary electrons produced when low energy ions pass through very thin carbon foils. Funded in part by the U.S. Department of Energy through the Laboratory for Laser Energetics.

Influence of ion-to-atom ratio on the microstructure of evaporated molybdenum thin films grown using low energy argon ions

Energy Technology Data Exchange (ETDEWEB)

Yadav, Praveen Kumar, E-mail: praveenyadav@rrcat.gov.in; Nayak, Maheswar; Rai, Sanjay Kumar; Lodha, Gyanendra Singh [X-ray Optics Section, Indus Synchrotrons Utilization Division, Raja Ramanna Centre for Advanced Technology, Indore 452013 (India); Sant, Tushar; Sharma, Surinder Mohan [High Pressure and Synchrotron Radiation Physics Division, Bhabha Atomic Research Centre, Mumbai 400085 (India); Mukherjee, Chandrachur [Mechanical and Optical Support Section, Raja Ramanna Centre for Advanced Technology, Indore 452013 (India)

2014-03-15

The authors report the effect of argon ion to molybdenum atom ratio (r) on the microstructure of low energy (70 eV) argon ion assisted electron beam evaporated Mo thin films. Surface roughness, morphology, and crystallinity of Mo films are found to strongly depend on “r.” Increase of “r” from 0 to 100 induces gradual loss in crystallinity, reduction in surface roughness and systematic increase in density of the film. For “r” ∼ 100, average atomic density of the film approaches the bulk value (97%) with lowest surface roughness. Further, increasing “r” up to 170 reduces the atomic density, increases roughness, and increase in crystallinity induced by low energy Ar ion beam. The observed surface roughness and grain size determined by x-ray reflectivity and glancing incidence x-ray diffraction correlate well with atomic force microscopy measurements. This study demonstrates that for r = 100 one gets lowest roughness Mo film with highest density and nearly amorphous microstructure. The growth model is discussed by structural zone model.

The low-energy-beam and ion-trap facility at NSCL/MSU

Energy Technology Data Exchange (ETDEWEB)

Schwarz, S. E-mail: schwarz@nscl.msu.edu; Bollen, G.; Lawton, D.; Lofy, P.; Morrissey, D.J.; Ottarson, J.; Ringle, R.; Schury, P.; Sun, T.; Varentsov, V.; Weissman, L

2003-05-01

The goal of the low-energy-beam and ion-trap (LEBIT) project is to convert the high-energy exotic beams produced at NSCL/MSU into low-energy low-emittance beams. This beam manipulation will be done by a combination of a high-pressure gas stopping cell and a radio-frequency quadrupole ion accumulator and buncher. The first experimental program to profit from the low-energy beams produced will be high-accuracy mass measurements on very short-lived isotopes with a 9.4 T Penning trap system. The status of the project is presented with an emphasis on recent stopping tests range of 100 MeV/A {sup 40}Ar{sup 18+} ions in a gas cell.

The low-energy-beam and ion-trap facility at NSCL/MSU

International Nuclear Information System (INIS)

Schwarz, S.; Bollen, G.; Lawton, D.; Lofy, P.; Morrissey, D.J.; Ottarson, J.; Ringle, R.; Schury, P.; Sun, T.; Varentsov, V.; Weissman, L.

2003-01-01

The goal of the low-energy-beam and ion-trap (LEBIT) project is to convert the high-energy exotic beams produced at NSCL/MSU into low-energy low-emittance beams. This beam manipulation will be done by a combination of a high-pressure gas stopping cell and a radio-frequency quadrupole ion accumulator and buncher. The first experimental program to profit from the low-energy beams produced will be high-accuracy mass measurements on very short-lived isotopes with a 9.4 T Penning trap system. The status of the project is presented with an emphasis on recent stopping tests range of 100 MeV/A 40 Ar 18+ ions in a gas cell

InN: Fermi level stabilization by low-energy ion bombardment

International Nuclear Information System (INIS)

Piper, L.F.J.; Veal, T.D.; McConville, C.F.; Lu, H.; Schaff, W.J.

2006-01-01

The near-surface electronic properties of InN have been investigated with high-resolution electron-energy loss spectroscopy. Low-energy (∝400 eV) nitrogen ion bombardment followed by low temperature annealing (<300 C) was found to dramatically increase the n-type conductivity of InN, close to the surface. This is explained in terms of the formation of amphoteric defects from the ion bombardment and annealing combined with the band structure of InN. Low-energy ion bombardment and annealing is shown to result in a damage-induced, donor-like defect-profile instead of the expected electron accumulation for InN. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

The low-energy-beam and ion-trap facility at NSCL/MSU

CERN Document Server

Schwarz, S; Lawton, D; Lofy, P; Morrissey, D J; Ottarson, J; Ringle, R; Schury, P; Sun, T; Varentsov, V; Weissman, L

2003-01-01

The goal of the low-energy-beam and ion-trap (LEBIT) project is to convert the high-energy exotic beams produced at NSCL/MSU into low-energy low-emittance beams. This beam manipulation will be done by a combination of a high-pressure gas stopping cell and a radio-frequency quadrupole ion accumulator and buncher. The first experimental program to profit from the low-energy beams produced will be high-accuracy mass measurements on very short-lived isotopes with a 9.4 T Penning trap system. The status of the project is presented with an emphasis on recent stopping tests range of 100 MeV/A sup 4 sup 0 Ar sup 1 sup 8 sup + ions in a gas cell.

LEBIT - a low-energy beam and ion trap facility at NSCL/MSU

International Nuclear Information System (INIS)

Schwarz, S.; Bollen, G.; Davies, D.; Lawton, D.; Lofy, P.; Morrissey, D. J.; Ottarson, J.; Ringle, R.; Schury, P.; Sun, T.; VanWasshenova, D.; Sun, T.; Weissman, L.; Wiggins, D.

2003-01-01

The Low Energy Beam and Ion Trap (LEBIT) Project aims to convert the high-energy exotic beams produced at NSCL/MSU into low-energy low-emittance beams. A combination of a high-pressure gas stopping cell and a radiofrequency quadrupole (RFQ) ion accumulator and buncher will be used to manipulate the beam accordingly. High-accuracy mass measurements on very short-lived isotopes with a 9.4 T Penning trap system will be the first experimental program to profit from the low-energy beams. The status of the project is presented with a focus on recent stopping tests of 100-140 MeV/A Ar18+ ions in a gas cell

Low energy ion beam systems for surface analytical and structural studies

International Nuclear Information System (INIS)

Nelson, G.C.

1980-01-01

This paper reviews the use of low energy ion beam systems for surface analytical and structural studies. Areas where analytical methods which utilize ion beams can provide a unique insight into materials problems are discussed. The design criteria of ion beam systems for performing materials studies are described and the systems now being used by a number of laboratories are reviewed. Finally, several specific problems are described where the solution was provided at least in part by information provided by low energy ion analysis techniques

Beamline for low-energy transport of highly charged ions at HITRAP

International Nuclear Information System (INIS)

Andelkovic, Z.; Herfurth, F.; Kotovskiy, N.; König, K.; Maaß, B.; Murböck, T.; Neidherr, D.; Schmidt, S.; Steinmann, J.; Vogel, M.; Vorobjev, G.

2015-01-01

A beamline for transport of highly charged ions with energies as low as a few keV/charge has been constructed and commissioned at GSI. Complementary to the existing infrastructure of the HITRAP facility for deceleration of highly charged ions from the GSI accelerator, the new beamline connects the HITRAP ion decelerator and an EBIT with the associated experimental setups. Therefore, the facility can now transport the decelerated heavy highly charged ions to the experiments or supply them offline with medium-heavy highly charged ions from the EBIT, both at energies as low as a few keV/charge. Here we present the design of the 20 m long beamline with the corresponding beam instrumentation, as well as its performance in terms of energy and transport efficiency

Variations of Low-energy Ion Distributions Measured in the Heliosheath

International Nuclear Information System (INIS)

Decker, R. B.; Roelof, E. C.; Hill, M. E.; Krimigis, S. M.

2010-01-01

This report is an update of low-energy ion intensities and angular distributions measured recently by the Low Energy Charged Particle instruments on the Voyager 1 and 2 spacecraft in the inner heliosheath.

Ultra-low-energy (<10 eV/u) ion beam bombardment effect on naked DNA

Energy Technology Data Exchange (ETDEWEB)

Thopan, P. [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Thongkumkoon, P. [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Department of Biology, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Prakrajang, K. [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Faculty of Science, Maejo University, Chiang Mai 50290 (Thailand); Suwannakachorn, D. [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Yu, L.D., E-mail: yuld@thep-center.org [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Thailand Center of Excellence in Physics, Commission on Higher Education, 328 Si Ayutthaya Road, Bangkok 10400 (Thailand)

2014-05-01

Highlights: • Decelerated ultra-low energy ion beam bombarded naked DNA. • DNA form change induced by ion bombardment was investigated. • N-ion bombardment at 32 eV induced DNA single and double strand breaks. • Ar-ion bombardment at a-few-hundreds eV induced DNA single strand break. - Abstract: Since ion energy deposition in the ion-bombarded materials dominantly occurs in the low-energy range, it is very interesting to know effects from ultra-low-energy ion interaction with DNA for understanding ion-beam-induced genetic mutation. Tens-keV Ar- and N-ion beams were decelerated to ultra-low energy ranging from 20 to 100 eV, or only a few to 10 eV/u, to bombard naked plasmid DNA. The bombarded DNA was analyzed using gel electrophoresis for DNA form changes. The original DNA supercoiled form was found to change to relaxed and linear forms, indicating single or double strand breaks after bombarded by tens-eV ion beam. N-ion beam was found more effective in inducing DNA change and mutation than Ar-ion beam. The study demonstrated that the ion bombardment with energy as low as several-tens eV was able to break DNA strands and thus potentially to cause genetic modification of biological cells. The experimental results were discussed in terms of direct atomic collision between the ions and DNA atoms.

Ultra-low-energy (<10 eV/u) ion beam bombardment effect on naked DNA

International Nuclear Information System (INIS)

Thopan, P.; Thongkumkoon, P.; Prakrajang, K.; Suwannakachorn, D.; Yu, L.D.

2014-01-01

Highlights: • Decelerated ultra-low energy ion beam bombarded naked DNA. • DNA form change induced by ion bombardment was investigated. • N-ion bombardment at 32 eV induced DNA single and double strand breaks. • Ar-ion bombardment at a-few-hundreds eV induced DNA single strand break. - Abstract: Since ion energy deposition in the ion-bombarded materials dominantly occurs in the low-energy range, it is very interesting to know effects from ultra-low-energy ion interaction with DNA for understanding ion-beam-induced genetic mutation. Tens-keV Ar- and N-ion beams were decelerated to ultra-low energy ranging from 20 to 100 eV, or only a few to 10 eV/u, to bombard naked plasmid DNA. The bombarded DNA was analyzed using gel electrophoresis for DNA form changes. The original DNA supercoiled form was found to change to relaxed and linear forms, indicating single or double strand breaks after bombarded by tens-eV ion beam. N-ion beam was found more effective in inducing DNA change and mutation than Ar-ion beam. The study demonstrated that the ion bombardment with energy as low as several-tens eV was able to break DNA strands and thus potentially to cause genetic modification of biological cells. The experimental results were discussed in terms of direct atomic collision between the ions and DNA atoms

Low energy helium ion irradiation induced nanostructure formation on tungsten surface

International Nuclear Information System (INIS)

Al-Ajlony, A.; Tripathi, J.K.; Hassanein, A.

2017-01-01

We report on the low energy helium ion irradiation induced surface morphology changes on tungsten (W) surfaces under extreme conditions. Surface morphology changes on W surfaces were monitored as a function of helium ion energy (140–300 eV), fluence (2.3 × 10 24 –1.6 × 10 25 ions m −2 ), and flux (2.0 × 10 20 –5.5 × 10 20 ion m −2 s −1 ). All the experiments were performed at 900° C. Our study shows significant effect of all the three ion irradiation parameters (ion flux, fluence, and energy) on the surface morphology. However, the effect of ion flux is more pronounced. Variation of helium ion fluence allows to capture the very early stages of fuzz growth. The observed fuzz growth and morphology changes were understood in the realm of various possible phenomena. The study has relevance and important impact in the current and future nuclear fusion applications. - Highlights: •Reporting formation of W nanostructure (fuzz) due to low energy He ion beam irradiation. •Observing the very early stages for the W-Fuzz formation. •Tracking the surface morphological evolution during the He irradiation. •Discussing in depth our observation and drawing a possible scenario that explain this phenomenon. •Studying various ions irradiation parameters such as flux, fluence, and ions energy.

The Marshall Space Flight Center Low-Energy Ion Facility: a preliminary report

International Nuclear Information System (INIS)

Biddle, A.P.; Reynolds, J.W.; Chisholm, W.L. Jr.; Hunt, R.D.

1983-10-01

The Low-Energy Ion Facility (LEIF) is designed for laboratory research of low-energy ion beams similar to those present in the magnetosphere. In addition, it provides the ability to develop and calibrate low-energy, less than 50 eV, plasma instrumentation over its full range of energy, mass, flux, and arrival angle. The current status of this evolving resource is described. It also provides necessary information to allow users to utilize it most efficiently

Electron-ion recombination at low energy

International Nuclear Information System (INIS)

Andersen, L.H.

1993-01-01

The work is based on results obtained with a merged-beams experiment. A beam of electronics with a well characterized density and energy distribution was merged with a fast, monoenergetic ion beam. Results have been obtained for radiative recombination and dielectronic recombination at low relative energies (0 to ∼70eV). The obtained energy resolution was improved by about a factor of 30. High vacuum technology was used to suppress interactions with electrons from the environments. The velocity distribution of the electron beam was determined. State-selective dielectronic-recombination measurements were performable. Recombination processes were studied. The theoretical background for radiative recombination and Kramers' theory are reviewed. The quantum mechanical result and its relation to the semiclassical theory is discussed. Radiative recombination was also measured with several different non-bare ions, and the applicability of the semiclassical theory to non-bare ions was investigated. The use of an effective charge is discussed. For dielectronic recombination, the standard theoretical approach in the isolated resonance and independent-processes approximation is debated. The applicability of this method was tested. The theory was able to reproduce most of the experimental data except when the recombination process was sensitive to couplings between different electronic configurations. The influence of external perturbing electrostatic fields is discussed. (AB) (31 refs.)

Channeling effect for low energy ion implantation in Si

International Nuclear Information System (INIS)

Cho, K.; Allen, W.R.; Finstad, T.G.; Chu, W.K.; Liu, J.; Wortman, J.J.

1985-01-01

Ion implantation is one of the most important processes in semiconductor device fabrication. Due to the crystalline nature of Si, channeling of implanted ions occurs during this process. Modern devices become smaller and shallower and therefore require ion implantation at lower energies. The effect of channeling on ion implantation becomes a significant problem for low energy ion implantation. The critical angle for axial and planar channeling increases with decreasing energy. This corresponds to an increased probability for channeling with lowering of ion energy. The industry approach to avoid the channeling problem is to employ a tilt angle of 7 0 between the ion implantation direction and the surface normal. We approach the problem by mapping major crystalline axes and planes near the [100] surface normal. Our analysis indicates that a 7 0 tilt is not an optimum selection in channeling reduction. Tilt angles in the range 5 0 to 6 0 combined with 7 0 +- 0.5 0 rotation from the (100) plane are better selections for the reduction of the channeling effect. The range of suitable angles is a function of the implantation energy. Implantations of boron along well specified crystallographic directions have been carried out by careful alignment and the resulting boron profiles measured by SIMS. (orig.)

Inverted end-Hall-type low-energy high-current gaseous ion source

International Nuclear Information System (INIS)

Oks, E. M.; Vizir, A. V.; Shandrikov, M. V.; Yushkov, G. Yu.; Grishin, D. M.; Anders, A.; Baldwin, D. A.

2008-01-01

A novel approach to low-energy, high-current, gaseous ion beam generation was explored and an ion source based on this technique has been developed. The source utilizes a dc high-current (up to 20 A) gaseous discharge with electron injection into the region of ion generation. Compared to the conventional end-Hall ion source, the locations of the discharge anode and cathode are inverted: the cathode is placed inside the source and the anode outside, and correspondingly, the discharge current is in the opposite direction. The discharge operates in a diverging axial magnetic field, similar to the end-Hall source. Electron generation and injection is accomplished by using an additional arc discharge with a ''cold'' (filamentless) hollow cathode. Low plasma contamination is achieved by using a low discharge voltage (avoidance of sputtering), as well as by a special geometric configuration of the emitter discharge electrodes, thereby filtering (removing) the erosion products stemming from the emitter cathode. The device produces a dc ion flow with energy below 20 eV and current up to 2.5 A onto a collector of 500 cm 2 at 25 cm from the source edge, at a pressure ≥0.02 Pa and gas flow rate ≥14 SCCM. The ion energy spread is 2 to 3 eV (rms). The source is characterized by high reliability, low maintenance, and long lifetime. The beam contains less than 0.1% of metallic ions. The specific electric energy consumption is 400 eV per ion registered at the collector. The source operates with noble gases, nitrogen, oxygen, and hydrocarbons. Utilizing biasing, it can be used for plasma sputtering, etching, and other ion technologies

Low energy helium ion irradiation induced nanostructure formation on tungsten surface

Energy Technology Data Exchange (ETDEWEB)

Al-Ajlony, A., E-mail: montaserajlony@yahoo.com; Tripathi, J.K.; Hassanein, A.

2017-05-15

We report on the low energy helium ion irradiation induced surface morphology changes on tungsten (W) surfaces under extreme conditions. Surface morphology changes on W surfaces were monitored as a function of helium ion energy (140–300 eV), fluence (2.3 × 10{sup 24}–1.6 × 10{sup 25} ions m{sup −2}), and flux (2.0 × 10{sup 20}–5.5 × 10{sup 20} ion m{sup −2} s{sup −1}). All the experiments were performed at 900° C. Our study shows significant effect of all the three ion irradiation parameters (ion flux, fluence, and energy) on the surface morphology. However, the effect of ion flux is more pronounced. Variation of helium ion fluence allows to capture the very early stages of fuzz growth. The observed fuzz growth and morphology changes were understood in the realm of various possible phenomena. The study has relevance and important impact in the current and future nuclear fusion applications. - Highlights: •Reporting formation of W nanostructure (fuzz) due to low energy He ion beam irradiation. •Observing the very early stages for the W-Fuzz formation. •Tracking the surface morphological evolution during the He irradiation. •Discussing in depth our observation and drawing a possible scenario that explain this phenomenon. •Studying various ions irradiation parameters such as flux, fluence, and ions energy.

Surface modification and metallization of polycarbonate using low energy ion beam

International Nuclear Information System (INIS)

Reheem, A.M. Abdel; Maksoud, M.I.A. Abdel; Ashour, A.H.

2016-01-01

The low energy argon ion is used for irradiation polycarbonate samples using cold cathode ion source. The surface of the PC substrates is examined using SEM, UV-spectroscopy and FTIR. It was found that the energy band gap decrease by increase argon ion fluence. Copper films are deposited onto polycarbonate (PC) substrates after irradiation by argon ion beam. The structure, surface morphology and the optical band gap are investigated using XRD, SEM and UV spectroscopy. It can be seen that the intensity increases with deposition time and band gap decreases from 3.45 eV for the pristine PC to ∼1.7 eV for copper thin film. - Highlights: • The low energy argon ion is used for irradiation polycarbonate samples. • The surface roughness increase from 9 µm to 23.5 µm after argon ion irradiated. • Copper films are deposited onto polycarbonate (PC) substrates. • Energy band gap decreases from 3.45 eV for pristine to 1.7 eV for copper thin film.

Pattern formation on Ge by low energy ion beam erosion

International Nuclear Information System (INIS)

Teichmann, Marc; Lorbeer, Jan; Frost, Frank; Rauschenbach, Bernd; Ziberi, Bashkim

2013-01-01

Modification of nanoscale surface topography is inherent to low-energy ion beam erosion processes and is one of the most important fields of nanotechnology. In this report a comprehensive study of surface smoothing and self-organized pattern formation on Ge(100) by using different noble gases ion beam erosion is presented. The investigations focus on low ion energies (⩽ 2000 eV) and include the entire range of ion incidence angles. It is found that for ions (Ne, Ar) with masses lower than the mass of the Ge target atoms, no pattern formation occurs and surface smoothing is observed for all angles of ion incidence. In contrast, for erosion with higher mass ions (Kr, Xe), ripple formation starts at incidence angles of about 65° depending on ion energy. At smaller incident angles surface smoothing occurs again. Investigations of the surface dynamics for specific ion incidence angles by changing the ion fluence over two orders of magnitude gives a clear evidence for coarsening and faceting of the surface pattern. Both observations indicate that gradient-dependent sputtering and reflection of primary ions play crucial role in the pattern evolution, just at the lowest accessible fluences. The results are discussed in relation to recently proposed redistributive or stress-induced models for pattern formation. In addition, it is argued that a large angular variation of the sputter yield and reflected primary ions can significantly contribute to pattern formation and evolution as nonlinear and non-local processes as supported by simulation of sputtering and ion reflection. (paper)

Collisions of low-energy multicharged ions

International Nuclear Information System (INIS)

Phaneuf, R.A.; Crandall, D.H.

1981-01-01

Experimental measurements of cross sections for collisions of multiply charged ions with atoms at the lowest attainable collision energies are reported. Emphasis is on electron capture from hydrogen atoms by multiply charged ions at energies below 1 keV/amu. The principal effort is the development of a merged-ion-atom-beams apparatus for studies down to 1 eV/amu relative energy

Measurements of low energy auroral ions

International Nuclear Information System (INIS)

Urban, A.

1981-01-01

This paper summarizes ion measurements in the energy range 0.1 to 30 keV observed during the campaigns 'Substorm Phenomena' and 'Porcupine'. For a clear survey of the physical processes during extraordinary events, sometimes ion measurements of higher energies are also taken into account. Generally, the pitch angle distributions were isotropic during all flights except some remarkable events. In general the ion and electron flux intensities correlated, but sometimes revealed a spectral anti-correlation. Acceleration of the ions by an electrostatic field aligned parallel to the magnetic field could be identified accompanied by intense electron precipitation. On the other hand deceleration of the ions was observed in other field-aligned current sheets which are indicated by the electron and magnetic field measurements. Temporal successive monoenergetic ion variations pointed to energy dispersion and to the location of the source region at 9 Rsub(E). Furthermore, ion fluxes higher than those of the electrons were measured at pitch angles parallel to the magnetic field. The integral down-going number and energy flux of the ions contributed to the total particle or energy influx between 65% and less than 7% and did not clearly characterize the geophysical launch conditions or auroral activities. (author)

Production of low axial energy spread ion beams with multicusp sources

Energy Technology Data Exchange (ETDEWEB)

Lee, Yung -Hee Y. [Univ. of California, Berkeley, CA (United States)

1998-05-01

Multicusp ion sources are capable of producing ions with low axial energy spread which are necessary in applications such as: ion projection lithography (IPL) and focused ion beams for the next generation lithographic tools and nuclear science experiments such as radioactive ion beam production. The axial ion energy spread for multicusp source is approximately 6 eV which is too large for IPL and radioactive ion beam applications. The addition of a magnetic filter which consists of a pair of permanent magnets to the multicusp source reduces the energy spread considerably. The reduction is due to the improvement in the uniformity of the axial plasma potential distribution in the discharge region. Axial ion energy spread of the filament driven ion source has been measured using three different techniques. In all cases, it was found to be less than 2 eV. Energy spread of the radio frequency (RF) driven source has also been explored, and it was found to be less than 3 eV with the proper RF-shielding. A new multicusp source configuration has been designed and constructed to further reduce the energy spread. To achieve a more uniform axial plasma potential distribution, a cylindrical magnetic filter has been designed and constructed for a 2-cm-diameter source. This new source configuration, the co-axial source, is new in its kind. The energy spread in this source has been measured to be a record low of 0.6 eV. Because of the novelty of this device, some plasma parameters inside the source have been studied. Langmuir probe has been used to measure the plasma potential, the electron temperature and the density distribution.

Production of low axial energy spread ion beams with multicusp sources

International Nuclear Information System (INIS)

Lee, Y.H.Y.

1998-05-01

Multicusp ion sources are capable of producing ions with low axial energy spread which are necessary in applications such as: ion projection lithography (IPL) and focused ion beams for the next generation lithographic tools and nuclear science experiments such as radioactive ion beam production. The axial ion energy spread for multicusp source is approximately 6 eV which is too large for IPL and radioactive ion beam applications. The addition of a magnetic filter which consists of a pair of permanent magnets to the multicusp source reduces the energy spread considerably. The reduction is due to the improvement in the uniformity of the axial plasma potential distribution in the discharge region. Axial ion energy spread of the filament driven ion source has been measured using three different techniques. In all cases, it was found to be less than 2 eV. Energy spread of the radio frequency (RF) driven source has also been explored, and it was found to be less than 3 eV with the proper RF-shielding. A new multicusp source configuration has been designed and constructed to further reduce the energy spread. To achieve a more uniform axial plasma potential distribution, a cylindrical magnetic filter has been designed and constructed for a 2-cm-diameter source. This new source configuration, the co-axial source, is new in its kind. The energy spread in this source has been measured to be a record low of 0.6 eV. Because of the novelty of this device, some plasma parameters inside the source have been studied. Langmuir probe has been used to measure the plasma potential, the electron temperature and the density distribution

Ion mass dependence for low energy channeling in single-wall nanotubes

International Nuclear Information System (INIS)

Zheng Liping; Zhu Zhiyuan; Li Yong; Zhu Dezhang; Xia Huihao

2008-01-01

An Monte Carlo (MC) simulation program has been used to study ion mass dependence for the low energy channeling of natural- and pseudo-Ar ions in single-wall nanotubes. The MC simulations show that the channeling critical angle Ψ C obeys the (E) -1/2 and the (M 1 ) -1/2 rules, where E is the incident energy and M 1 is the ion mass. The reason for this may be that the motion of the channeled (or de-channeled) ions should be correlated with both the incident energy E and the incident momentum (2M 1 E) 1/2 , in order to obey the conservation of energy and momentum

Study on rice transformation mediated by low energy ion beam implantation

International Nuclear Information System (INIS)

Li Hong; Wu Lifang; Yu Zengliang

2001-01-01

Delivery of foreign DNA into rice via ion beam was first reported in 1994. In recent years we have aimed to set up efficient transformation system mediated by low energy ion beam. The factors that influence the transformation including type of ion, parameters of ion energy, dose and dose rate, plant genotype, composition of media, concentration of hormones and antibiotics were carefully investigated. Treated with 25ke V Ar + , the transformation efficiencies of the mature embryos of rice variety 02428, Hua pei94-jian-09 and Minghui63 reached 11%, 11.4% and 7.1% measured by produced antibiotic resistant callus and l.52%, 1.87% and l.13% measured by regenerated plants respectively. PCR detection and Southern blot analysis showed that GUS report gene had inserted in rice genome. Low energy ion beam mediated gene transfer will be extended to other cereal recalcitrant to Agrobacterium tumefaciens as soon as methodological parameters were optimized. (authors)

Low energy implantation of boron with decaborane ions

Science.gov (United States)

Albano, Maria Angela

The goal of this dissertation was to determine the feasibility of a novel approach to forming ultra shallow p-type junctions (tens of nm) needed for future generations of Si MOS devices. In the new approach, B dopant atoms are implanted by cluster ions obtained by ionization of decaborane (B 10H14) vapor. An experimental ion implanter with an electron impact ion source and magnetic mass separation was built at the Ion Beam and Thin Film Research Laboratory at NJIT. Beams of B10Hx+ ions with currents of a few microamperes and energies of 1 to 12 keV were obtained and used for implantation experiments. Profiles of B and H atoms implanted in Si were measured by Secondary Ion Mass Spectroscopy (SIMS) before and after rapid thermal annealing (RTA). From the profiles, the junction depth of 57 nm (at 1018 cm-3 B concentration) was obtained with 12 keV decaborane ions followed by RTA. The dose of B atoms that can be implanted at low energy into Si is limited by sputtering as the ion beam sputters both the matrix and the implanted atoms. As the number of sputtered B atoms increases with the implanted dose and approaches the number of the implanted atoms, equilibrium of B in Si is established. This effect was investigated by comparison of the B dose calculated from the ion beam integration with B content in the sample measured by Nuclear Reaction Analysis (NRA). Maximum (equilibrium) doses of 1.35 x 1016 B cm -2 and 2.67 x 1016 B cm-2 were obtained at the beam energies of 5 and 12 keV, respectively. The problem of forming shallow p-type junctions in Si is related not only to implantation depth, but also to transient enhanced diffusion (TED). TED in Si implanted with B10Hx+ was measured on boron doping superlattice (B-DSL) marker layers. It was found that TED, following decaborane implantation, is the same as with monomer B+ ion implantation of equivalent energy and that it decreases with the decreasing ion energy. (Abstract shortened by UMI.)

The synthesis of nucleotide in the aqueous solution induced by low energy ions

International Nuclear Information System (INIS)

Shi Huaibin; Shao Chunlin; Wang Xiangqin; Yu Zengliang

2000-08-01

A new apparatus was designed to induce reactions in aqueous solution by introducing low energy ions into the aqueous solution, this apparatus overcome the defaults of the old ones which demanded vacuum and made it possible to study the action among solutions, it also expanded the ion implantation biology. The role of low energy ions was introduced into the study of the origin of life, primitive earth conditions were imitated to study prior-life synthesis of nucleotide by introducing low energy ions into aqueous solution, low energy N + was implanted into adenine supersaturation solution including D-ribose and NH 4 H 2 PO 4 , it was confirmed that 5'-AMP was gained by HPLC analysis of the products. In comparison with other methods in this field, this one is simpler and nearer to the primitive earth conditions, thus it provided a new try for the studying of the origin of life

Note: A well-confined pulsed low-energy ion beam: Test experiments of Ar+

Science.gov (United States)

Hu, Jie; Wu, Chun-Xiao; Tian, Shan Xi

2018-06-01

Here we report a pulsed low-energy ion beam source for ion-molecule reaction study, in which the ions produced by the pulsed electron impact are confined well in the spatial size of each bunch. In contrast to the ion focusing method to reduce the transverse section of the beam, the longitudinal section in the translational direction is compressed by introducing a second pulse in the ion time-of-flight system. The test experiments for the low-energy argon ions are performed. The present beam source is ready for applications in the ion-molecule reaction dynamics experiments, in particular, in combination with the ion velocity map imaging technique.

Interaction of low-energy highly charged ions with matter

International Nuclear Information System (INIS)

Ginzel, Rainer

2010-01-01

The thesis presented herein deals with experimental studies of the interaction between highly charged ions and neutral matter at low collision energies. The energy range investigated is of great interest for the understanding of both charge exchange reactions between ions comprising the solar wind and various astrophysical gases, as well as the creation of near-surface nanostructures. Over the course of this thesis an experimental setup was constructed, capable of reducing the kinetic energy of incoming ions by two orders of magnitude and finally focussing the decelerated ion beam onto a solid or gaseous target. A coincidence method was employed for the simultaneous detection of photons emitted during the charge exchange process together with the corresponding projectile ions. In this manner, it was possible to separate reaction channels, whose superposition presumably propagated large uncertainties and systematic errors in previous measurements. This work has unveiled unexpectedly strong contributions of slow radiative decay channels and clear evidence of previously only postulated decay processes in charge exchange-induced X-ray spectra. (orig.)

Track structure for low energy ions including charge exchange processes

International Nuclear Information System (INIS)

Uehara, S.; Nikjoo, H.

2002-01-01

The model and development is described of a new generation of Monte Carlo track structure codes. The code LEAHIST simulates full slowing down of low-energy proton history tracks in the range 1 keV-1 MeV and the code LEAHIST simulates low-energy alpha particle history tracks in the range 1 keV-8 MeV in water. All primary ion interactions are followed down to 1 keV and all electrons to 1 eV. Tracks of secondary electrons ejected by ions were traced using the electron code KURBUC. Microdosimetric parameters derived by analysis of generated tracks are presented. (author)

Energy analyzer for Auger electron spectroscopy and low-energy backscattering ion spectroscopy

International Nuclear Information System (INIS)

Volkov, S.S.; Gorelik, V.A.; Gutenko, V.T.; Protopopov, O.D.; Trubitsin, A.A.; Shuvalova, Z.A.; Yakushev, G.A.

1988-01-01

Energy analyzer for electron Auger spectroscopy and low-energy backscattering ion spectroscopy is described. Analyzer presents one-cascade variant of cylindrical mirror with second-order focusing. Energy relative resolution is continuously adjusted within 0.2-1.2% limits. Signal/noise relation by Cu Auger-line at 1 muA current of exciting beam changes upper limit of range 150-450

Experimental apparatus to investigate interactions of low energy ions with solid surfaces, 1

International Nuclear Information System (INIS)

Tsukakoshi, Osamu; Narusawa, Tadashi; Mizuno, Masayasu; Sone, Kazuho; Ohtsuka, Hidewo.

1975-12-01

Experimental apparatus to study the surface phenomena has been designed, which is intended to solve the vacuum wall problems in future thermonuclear fusion reactors and large experimental tokamak devices. An ion source and the beam transport optics are provided for bombarding solid target surface with an ion beam of energy from 0.1 to 6 keV. Measuring instruments include an ion energy analyser, a quadrupole mass spectrometer, an Auger electron spectrometer, an electro-micro-balance, a neutral particle energy spectrometer and its calibration system. Pumping system consists of oil-free ultrahigh vacuum pumps. Various kinds of experiments will be carried out by using the apparatus: 1) sputtering by low energy ion bombardment, 2) re-emission of the incident particles during and after ion bombardment, 3) release of adsorbed and occluded gases in the solids by ion bombardment, and 4) backscattering of fast ions. The combinations of measuring instruments for each experiment and their relative positions in the vacuum chamber are described through detailed drawings. The fundamental aspect in design of the ion beam transport optics for a low energy ion beam which can no longer neglect the space charge effect is also discussed. (auth.)

Comparison of biomolecule desorption yields for low and high energy primary ions

International Nuclear Information System (INIS)

Kamensky, I.; Hakansson, P.; Sundqvist, B.; McNeal, C.J.; MacFarlane, R.

1982-01-01

Ion induced desorption yields of molecular ions from samples of cesium iodide, glycylglycine, ergosterol, bleomycin and a trinucleoside diphosphate have been studied using primary beams of 54 MeV 63 Cu 9+ and 3 keV 133 Cs + . Mass analysis was performed with a time-of-flight technique. Each sample was studied with the same spectrometer for both low and high energy primary ions and without opening of the vacuum chamber in between the measurements. The results show that fast heavy ions give larger yields for all samples studied and that the yield ratios for high to low energy desorption increase with the mass of the sample molecule. (orig.)

Flow direction variations of low energy ions as measured by the ion electron sensor (IES) flying on board of Rosetta

Science.gov (United States)

Szegö, Karoly; Nemeth, Zoltan; Foldy, Lajos; Burch, James L.; Goldstein, Raymond; Mandt, Kathleen; Mokashi, Prachet; Broiles, Tom

2015-04-01

The Ion Electron Sensor (IES) simultaneously measures ions and electrons with two separate electrostatic plasma analyzers in the energy range of 4 eV- 22 keV for ions. The field of view is 90ox360o, with angular resolution 5ox45o for ions, with a sector containing the solar wind being further segmented to 5o × 5o. IES has operated continuously since early 2014. In the ion data a low energy (energy ions. Here we analyze the arrival direction of this low energy component. The origin of these low energy ions is certainly the ionized component of the neutral gas emitted due to solar activity from comet 67P/Churiumov-Gerasimenko. The low energy component in general shows a 6h periodicity due to cometary rotation. The data show, however, that the arrival direction of the low energy ions is smeared both in azimuth and elevation, due possibly to the diverse mechanisms affecting these ions. One of these effects is the spacecraft potential (~-10V), which accelerates the ions towards the spacecraft omnidirectionally. To characterize the flow direction in azimuth-elevation, we have integrated over the lowest 8 energy channels using weighted energy: sum(counts * energy)/sum(counts); and considered only cases when the counts are above 30. When we apply higher cut for counts, the flow direction became more definite. For this analysis we use data files where the two neighbouring energy values and elevation values are collapsed; and the azimuthal resolution is 45o, that is the solar wind azimuthal segmentation is also collapsed. Here we use day 2014.09.11. as illustration. On that day a solar wind shock reached the spacecraft at about ~10 UT. After the shock transition the energy of the solar wind became higher, and after ~12 UT the flow direction of the solar wind fluctuated, sometimes by 35o. On this day Rosetta flew at about 29.3-29.6 km from the nucleus. In the azimuth-elevation plots summed over "weighted energy" (as defined above) we were able to identify two flow directions

Low-frequency REB modulation and acceleration of ions in a supercritical mode during plasma injection

International Nuclear Information System (INIS)

Chupikov, P.T.; Medvedev, D.V.; Onishchenko, I.N.; Panasenko, B.D.

2004-01-01

Low-frequency modulation of a high-current relativistic electron beam (REB) and acceleration of ions in the first section of a collective ion accelerator as studied experimentally. This modulation was obtained due to periodic compensation of a virtual cathode charge by plasma ions. An ion flow was produced by an electric field of virtual cathode when plasma assists. Plasma was formed by the four Bostick plasma guns placed at equal distance along the periphery of the drift chamber. The low-frequency modulation with depth 10 % at frequency 46 MHz was obtained. The ion energy was measured using the magnetic analyzer. The ion energy that probably was obtained in the potential well of the virtual cathode exceeded the REB energy

Negative ions as a source of low energy neutral beams

Energy Technology Data Exchange (ETDEWEB)

Fink, J.H.

1980-01-01

Little consideration has been given to the impact of recent developments in negative ion source technology on the design of low energy neutral beam injectors. However, negative ion sources of improved operating efficiency, higher gas efficiency, and smaller beam divergence will lead to neutral deuterium injectors, operating at less than 100 keV, with better operating efficiencies and more compact layouts than can be obtained from positive ion systems.

Negative ions as a source of low energy neutral beams

International Nuclear Information System (INIS)

Fink, J.H.

1980-01-01

Little consideration has been given to the impact of recent developments in negative ion source technology on the design of low energy neutral beam injectors. However, negative ion sources of improved operating efficiency, higher gas efficiency, and smaller beam divergence will lead to neutral deuterium injectors, operating at less than 100 keV, with better operating efficiencies and more compact layouts than can be obtained from positive ion systems

Scattering of low energy noble gas ions from a metal surface

International Nuclear Information System (INIS)

Luitjens, S.B.

1980-01-01

Reflection of low energy (0.1-10 keV) noble gas ions can be used to analyse a solid surface. To study charge exchange processes, the ion fractions of neon and of argon, scattered from a Cu(100) surface, have been determined. (Auth.)

A quadrupole ion trap as low-energy cluster ion beam source

CERN Document Server

Uchida, N; Kanayama, T

2003-01-01

Kinetic energy distribution of ion beams was measured by a retarding field energy analyzer for a mass-selective cluster ion beam deposition system that uses a quadrupole ion trap as a cluster ion beam source. The results indicated that the system delivers a cluster-ion beam with energy distribution of approx 2 eV, which corresponded well to the calculation results of the trapping potentials in the ion trap. Using this deposition system, mass-selected hydrogenated Si cluster ions Si sub n H sub x sup + were actually deposited on Si(111)-(7x7) surfaces at impact kinetic energy E sub d of 3-30 eV. Observation by using a scanning tunneling microscope (STM) demonstrated that Si sub 6 H sub x sup + cluster ions landed on the surface without decomposition at E sub d =3 eV, while the deposition was destructive at E sub d>=18 eV. (author)

Measurements of sputtering yields for low-energy plasma ions

International Nuclear Information System (INIS)

Nishi, M.; Yamada, M.; Suckewer, S.; Rosengaus, E.

1979-04-01

Sputtering yields of various wall/limiter materials of fusion devices have been extensively measured in the relevant plasma environment for low-energy light ions (E 14 cm -3 and electron temperature up to 10eV. Target materials used were C (graphite), Ti, Mo, Ta, W, and Fe (stainless steel). In order to study the dependence of the sputtering yields on the incident energy of ions, the target samples were held at negative bias voltage up to 300V. The sputtering yields were determined by a weight-loss method and by spectral line intensity measurements. The data obtained in the present experiment agree well with those previously obtained at the higher energies (E greater than or equal to 200eV) by other authors using different schemes; the present data also extend to substantially lower energies (E approx. > 30eV) than hitherto

A simple model for low energy ion-solid interactions

International Nuclear Information System (INIS)

Mohajerzadeh, S.; Selvakumar, C.R.

1997-01-01

A simple analytical model for ion-solid interactions, suitable for low energy beam depositions, is reported. An approximation for the nuclear stopping power is used to obtain the analytic solution for the deposited energy in the solid. The ratio of the deposited energy in the bulk to the energy deposited in the surface yields a ceiling for the beam energy above which more defects are generated in the bulk resulting in defective films. The numerical evaluations agree with the existing results in the literature. copyright 1997 American Institute of Physics

An online low energy gaseous ion source

International Nuclear Information System (INIS)

Jin Shuoxue; Guo Liping; Peng Guoliang; Zhang Jiaolong; Yang Zheng; Li Ming; Liu Chuansheng; Ju Xin; Liu Shi

2010-01-01

The accumulation of helium and/or hydrogen in nuclear materials may cause performance deterioration of the materials. In order to provide a unique tool to investigate the He-and/or H-caused problems, such as interaction of helium with hydrogen and defects, formation of gas bubbles and its evolution, and the related effects, we designed a low energy (≤ 20 keV) cold cathode Penning ion source, which will be interfaced to a 200 kV transmission electron microscope (TEM), for monitoring continuously the evolution of micro-structure during the He + or H + ion implantation. Studies on discharge voltage-current characteristics of the ion source, and extraction and focusing of the ion beam were performed. The ion source works stably with 15-60 mA of the discharge current.Under the gas pressure of 5 x 10 -3 Pa and 1.5 x 10 -2 Pa, the discharge voltage are about 380 V and 320 V, respectively. The extracted ion current under lower gas pressure is greater than that under higher gas pressure, and it increases with the discharge current and extraction voltage. The ion lens consisting of three equal-diameter metal cylinder focus the ion beam effectively, so that the beam density at the 150 cm away from the lens exit increases by a over one order of magnitude. For ion beams of around 10 keV, the measured beam density is about 200 nA · cm -2 , which is applicable for ion implantation and in situ TEM observation for many kinds of nuclear materials. (authors)

Radiative recombination of highly charged ions: Enhanced rates at low energies

International Nuclear Information System (INIS)

Frank, A.; Mueller, A.; Haselbauer, J.; Schennach, S.; Spies, W.; Uwira, O.; Wagner, M.

1992-01-01

In a single-pass merged-beams experiment employing a dense cold electron target recombination of highly charged ions is studied. Unexpected high recombination rates are observed at low energies E cm in the electron-ion center-of-mass frame. In particular, theoretical estimates for radiative recombination are dramatically exceeded by the experimental recombination rates at E cm =0 eV for U 28+ and for Au 25+ ions. Considerable rate enhancement is also observed for Ar 15+ . This points to a general phenomenon which has to be interpreted as a consequence of high electron densities, low electron beam temperatures, high ion charge states and presence of strong magnetic fields. (orig.)

Emittance measurements in low energy ion storage rings

Science.gov (United States)

Hunt, J. R.; Carli, C.; Resta-López, J.; Welsch, C. P.

2018-07-01

The development of the next generation of ultra-low energy antiproton and ion facilities requires precise information about the beam emittance to guarantee optimum performance. In the Extra-Low ENergy Antiproton storage ring (ELENA) the transverse emittances will be measured by scraping. However, this diagnostic measurement faces several challenges: non-zero dispersion, non-Gaussian beam distributions due to effects of the electron cooler and various systematic errors such as closed orbit offsets and inaccurate rms momentum spread estimation. In addition, diffusion processes, such as intra-beam scattering might lead to emittance overestimates. Here, we present algorithms to efficiently address the emittance reconstruction in presence of the above effects, and present simulation results for the case of ELENA.

A low-energy ion source for p-type doping in MBE

International Nuclear Information System (INIS)

Park, R.M.; Stanley, C.R.; Clampitt, R.

1980-01-01

A compact low-energy ion cell has been developed for use as a source of acceptor impurities for the growth of p-type semiconductor material in ultra-high vacuum by molecular beam epitaxy. A flux of either zinc or cadmium atoms is emitted under molecular effusion conditions and partially ionised in the orifice of the cell by electron bombardment. The design provides for control of both the ion energy and current at constant cell temperature. (100)InP has been grown by MBE in a flux of 1 keV Zn ions. The surface morphology and crystal structure show no degradation when compared with (100)InP grown without the Zn ions present. (author)

High-intensity low energy titanium ion implantation into zirconium alloy

Science.gov (United States)

Ryabchikov, A. I.; Kashkarov, E. B.; Pushilina, N. S.; Syrtanov, M. S.; Shevelev, A. E.; Korneva, O. S.; Sutygina, A. N.; Lider, A. M.

2018-05-01

This research describes the possibility of ultra-high dose deep titanium ion implantation for surface modification of zirconium alloy Zr-1Nb. The developed method based on repetitively pulsed high intensity low energy titanium ion implantation was used to modify the surface layer. The DC vacuum arc source was used to produce metal plasma. Plasma immersion titanium ions extraction and their ballistic focusing in equipotential space of biased electrode were used to produce high intensity titanium ion beam with the amplitude of 0.5 A at the ion current density 120 and 170 mA/cm2. The solar eclipse effect was used to prevent vacuum arc titanium macroparticles from appearing in the implantation area of Zr sample. Titanium low energy (mean ion energy E = 3 keV) ions were implanted into zirconium alloy with the dose in the range of (5.4-9.56) × 1020 ion/cm2. The effect of ion current density, implantation dose on the phase composition, microstructure and distribution of elements was studied by X-ray diffraction, scanning electron microscopy and glow-discharge optical emission spectroscopy, respectively. The results show the appearance of Zr-Ti intermetallic phases of different stoichiometry after Ti implantation. The intermetallic phases are transformed from both Zr0.7Ti0.3 and Zr0.5Ti0.5 to single Zr0.6Ti0.4 phase with the increase in the implantation dose. The changes in phase composition are attributed to Ti dissolution in zirconium lattice accompanied by the lattice distortions and appearance of macrostrains in intermetallic phases. The depth of Ti penetration into the bulk of Zr increases from 6 to 13 μm with the implantation dose. The hardness and wear resistance of the Ti-implanted zirconium alloy were increased by 1.5 and 1.4 times, respectively. The higher current density (170 mA/cm2) leads to the increase in the grain size and surface roughness negatively affecting the tribological properties of the alloy.

Low flux and low energy helium ion implantation into tungsten using a dedicated plasma source

Energy Technology Data Exchange (ETDEWEB)

Pentecoste, Lucile [GREMI, CNRS/Université d’Orléans, 14 rue d’Issoudun, B.P. 6744, 45067 Orléans Cedex2 (France); Thomann, Anne-Lise, E-mail: anne-lise.thomann@univ-orleans.fr [GREMI, CNRS/Université d’Orléans, 14 rue d’Issoudun, B.P. 6744, 45067 Orléans Cedex2 (France); Melhem, Amer; Caillard, Amael; Cuynet, Stéphane; Lecas, Thomas; Brault, Pascal [GREMI, CNRS/Université d’Orléans, 14 rue d’Issoudun, B.P. 6744, 45067 Orléans Cedex2 (France); Desgardin, Pierre; Barthe, Marie-France [CNRS, UPR3079 CEMHTI, 1D avenue de la Recherche Scientifique, 45071 Orléans Cedex2 (France)

2016-09-15

The aim of this work is to investigate the first stages of defect formation in tungsten (W) due to the accumulation of helium (He) atoms inside the crystal lattice. To reach the required implantation conditions, i.e. low He ion fluxes (10{sup 11}–10{sup 14} ions.cm{sup 2}.s{sup −1}) and kinetic energies below the W atom displacement threshold (about 500 eV for He{sup +}), an ICP source has been designed and connected to a diffusion chamber. Implantation conditions have been characterized by means of complementary diagnostics modified for measurements in this very low density helium plasma. It was shown that lowest ion fluxes could only be reached for the discharge working in capacitive mode either in α or γ regime. Special attention was paid to control the energy gained by the ions by acceleration through the sheath at the direct current biased substrate. At very low helium pressure, in α regime, a broad ion energy distribution function was evidenced, whereas a peak centered on the potential difference between the plasma and the biased substrate was found at higher pressures in the γ mode. Polycrystalline tungsten samples were exposed to the helium plasma in both regimes of the discharge and characterized by positron annihilation spectroscopy in order to detect the formed vacancy defects. It was found that W vacancies are able to be formed just by helium accumulation and that the same final implanted state is reached, whatever the operating mode of the capacitive discharge.

Electrophoresis examination of strand breaks in plasmid DNA induced by low-energy nitrogen ion irradiation

International Nuclear Information System (INIS)

Zhao Yong; Tan Zheng; Du Yanhua; Qiu Guanying

2003-01-01

To study the effect on plasmid DNA of heavy ion in the energy range of keV where nuclear stopping interaction becomes more important or even predominant, thin film of plasmid pGEM-3Zf(-) DNA was prepared on aluminum surface and irradiated in vacuum ( -3 Pa) by low-energy nitrogen ions with energy of 30 keV (LET=285 keV/μm) at various fluence ranging from 2 x 10 10 to 8.2 x 10 13 ions/cm 2 . DNA strand breaks were analyzed by neutral electrophoresis followed by quantification with image analysis software. Low-energy nitrogen ion irradiation induced single-, double- and multiple double-strand breaks (DSB) and multiple DSB as the dominating form of DNA damages. Moreover, the linear fluence-response relationship at a low fluence range suggests that DSBs are induced predominantly by single ion track. However, strand break production is limited to a short range in the irradiated samples

Tracking of Polycarbonate Films using Low-energy Ions Final Report CRADA No. TC-774-94

Energy Technology Data Exchange (ETDEWEB)

Musket, R. G. [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)

2018-01-24

Ion tracking is performed almost exclusively using ions with energies near or above the maximum in electronic stopping. For the present study, we have examined the results of etching ion tracks created by ions bombarding polycarbonate films with energies corresponding to stopping well below the maximum and just above the anticipated threshold for creating etchable latent tracks. Low-energy neon and argon ions with 18-60 keV /amu and fluences of about 10⁸/cm² were used to examine the limits for producing etchable tracks in polycarbonate films. By concentrating on the early stages of etching (i.e., -20 nm < SEM hole diameter < -100 nm), we can directly relate the energy deposition calculated for the incident ion to the creation of etchable tracks. The experimental results will be discussed with regard to the energy losses of the ions in the polycarbonate films and to the formation of continuous latent tracks through the entire thickness the films. These results have significant implications with respect to the threshold for formation of etchable tracks and to the use of low-energy ions for lithographic applications.

The steering and manipulation of ion beams for low-energy heavy ion accelerators

International Nuclear Information System (INIS)

Beanland, D.G.; Freeman, J.H.

1976-01-01

Both electrostatic and magnetic fields are used in low-energy accelerators. Electrostatic fields are essential in the acceleration stages and they are commonly used for ion beam scanning and focussing. Magnetic fields are only infrequently used as lenses, but they are essential for mass analysis and are sometimes employed for beam steering. The electrostatic mirror is a versatile and compact lens which has hitherto received little attention for the controlled manipulation of heavy ions. In addition to energy analysis it can be used to steer, focus and scan such beams and its flexibility and usefulness can be further increased by shaping the electrostatic field in the mirror space. The use of a computer programme to model the focussing behaviour of a variety of lens shapes is described and it is shown that the focal properties of the mirror can be controlled to produce a parallel, convergent or divergent output beam. The use of mirrors for two-dimensional beam focusing is also outlined. To permit the use of the mirror system with heavy ions an apertured front plate, without field-defining gauzes, was utilized. In consequence an additional electrode was incorporated in the lens structure to prevent penetration of the positive electric field along the beam axes outside the mirror space. This factor and the compact design of the mirror, contributed to the minimisation of space-charge defocussing effects which normally militate against the use of such electrostatic lenses with high intensity ion beams. The results of experiments confirming the computer predictions are briefly described and, in conclusion some possible applications of electrostatic mirrors in electromagnetic isotope separators and low energy accelerators are outlined. (Auth.)

Low-energy ion-beam deposition apparatus equipped with surface analysis system

International Nuclear Information System (INIS)

Ohno, Hideki; Aoki, Yasushi; Nagai, Siro.

1994-10-01

A sophisticated apparatus for low energy ion beam deposition (IBD) was installed at Takasaki Radiation Chemistry Research Establishment of JAERI in March 1991. The apparatus is composed of an IBD system and a real time/in-situ surface analysis system for diagnosing deposited thin films. The IBD system provides various kinds of low energy ion down to 10 eV with current density of 10 μA/cm 2 and irradiation area of 15x15 mm 2 . The surface analysis system consists of RHEED, AES, ISS and SIMS. This report describes the characteristics and the operation procedure of the apparatus together with some experimental results on depositing thin carbon films. (author)

Modelling interaction cross sections for intermediate and low energy ions

International Nuclear Information System (INIS)

Toburen, L.H.; Shinpaugh, J.L.; Justiniano, E.L.B.

2002-01-01

When charged particles slow in tissue they undergo electron capture and loss processes than can have profound effects on subsequent interaction cross sections. Although a large amount of data exists for the interaction of bare charged particles with atoms and molecules, few experiments have been reported for these 'dressed' particles. Projectile electrons contribute to an impact-parameter-dependent screening of the projectile charge that precludes straightforward scaling of energy loss cross sections from those of bare charged particles. The objective of this work is to develop an analytical model for the energy-loss-dependent effects of screening on differential ionisation cross sections that can be used in track structure calculations for high LET ions. As a first step a model of differential ionisation cross sections for bare ions has been combined with a simple screening model to explore cross sections for intermediate and low energy dressed ions in collisions with atomic and molecular gas targets. The model is described briefly and preliminary results compared to measured electron energy spectra. (author)

Is low-energy-ion bombardment generated X-ray emission a secondary mutational source to ion-beam-induced genetic mutation?

Energy Technology Data Exchange (ETDEWEB)

Thongkumkoon, P. [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Thailand Center of Excellence in Physics, Commission on Higher Education, 328 Si Ayutthaya Road, Bangkok 10400 (Thailand); Prakrajang, K. [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Faculty of Science, Maejo University, Chiang Mai 50290 (Thailand); Thopan, P.; Yaopromsiri, C. [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Suwannakachorn, D. [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Thailand Center of Excellence in Physics, Commission on Higher Education, 328 Si Ayutthaya Road, Bangkok 10400 (Thailand); Yu, L.D., E-mail: yuld@fnrf.science.cmu.ac.th [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Thailand Center of Excellence in Physics, Commission on Higher Education, 328 Si Ayutthaya Road, Bangkok 10400 (Thailand)

2013-07-15

Highlights: ► Detected X-ray emission from metal, plastic and biological samples. ► Characteristic X-ray emission was detected from metal but not from non-metals. ► Low-energy ion bombarded bacteria held in different sample holders. ► Bacteria held in metal holder had higher mutation rate than in plastic holder. ► Ion-beam-induced X-ray from biological sample is not a basic mutation source. -- Abstract: Low-energy ion beam biotechnology has achieved tremendous successes in inducing crop mutation and gene transfer. However, mechanisms involved in the related processes are not yet well understood. In ion-beam-induced mutation, ion-bombardment-produced X-ray has been proposed to be one of the secondary mutation sources, but the speculation has not yet been experimentally tested. We carried out this investigation to test whether the low-energy ion-beam-produced X-ray was a source of ion-beam-induced mutation. In the investigation, X-ray emission from 29-keV nitrogen- or argon- ion beam bombarded bacterial Escherichia coli (E. coli) cells held in a metal or plastic sample holder was in situ detected using a highly sensitive X-ray detector. The ion beam bombarded bacterial cells held in different material holders were observed for mutation induction. The results led to a conclusion that secondary X-ray emitted from ion-beam-bombarded biological living materials themselves was not a, or at least a negligible, mutational source, but the ion-beam-induced X-ray emission from the metal that made the sample holder could be a source of mutation.

Is low-energy-ion bombardment generated X-ray emission a secondary mutational source to ion-beam-induced genetic mutation?

International Nuclear Information System (INIS)

Thongkumkoon, P.; Prakrajang, K.; Thopan, P.; Yaopromsiri, C.; Suwannakachorn, D.; Yu, L.D.

2013-01-01

Highlights: ► Detected X-ray emission from metal, plastic and biological samples. ► Characteristic X-ray emission was detected from metal but not from non-metals. ► Low-energy ion bombarded bacteria held in different sample holders. ► Bacteria held in metal holder had higher mutation rate than in plastic holder. ► Ion-beam-induced X-ray from biological sample is not a basic mutation source. -- Abstract: Low-energy ion beam biotechnology has achieved tremendous successes in inducing crop mutation and gene transfer. However, mechanisms involved in the related processes are not yet well understood. In ion-beam-induced mutation, ion-bombardment-produced X-ray has been proposed to be one of the secondary mutation sources, but the speculation has not yet been experimentally tested. We carried out this investigation to test whether the low-energy ion-beam-produced X-ray was a source of ion-beam-induced mutation. In the investigation, X-ray emission from 29-keV nitrogen- or argon- ion beam bombarded bacterial Escherichia coli (E. coli) cells held in a metal or plastic sample holder was in situ detected using a highly sensitive X-ray detector. The ion beam bombarded bacterial cells held in different material holders were observed for mutation induction. The results led to a conclusion that secondary X-ray emitted from ion-beam-bombarded biological living materials themselves was not a, or at least a negligible, mutational source, but the ion-beam-induced X-ray emission from the metal that made the sample holder could be a source of mutation

Utilization of ion source 'SUPERSHYPIE' in the study of low energy ion-atom and ion-molecule collisions

International Nuclear Information System (INIS)

Bazin, V.; Boduch, P.; Chesnel, J.Y.; Fremont, F.; Lecler, D.; Pacquet, J. Y.; Gaubert, G.; Leroy, R.

1999-01-01

Modifications in the ECR 4M ion source are described, which conducted to realization of the advanced source 'SUPERSHYPIE'. The Ar 8+ ion collision with Cs(6s,6p) were studied by photon spectroscopy at low energy, where the process is dominated by simple electron capture. Results obtained with 'SUPERSHYPIE' source are presented. The source was utilized also in ion-molecule collisions (CO, H 2 ) to study the spectra of recoil ions and Auger electron spectra in the Ar 17+ He collisions. The excellent performances of 'SUPERSHYPIE' in high charge production and concerning its accurate and fine control and stability are illustrated and underlined as compared with those of ECR 4M source

Generating of low energy intensive ion streams in conditions of low pressure

International Nuclear Information System (INIS)

Zinoviev, D.V.; Tseluyko, A.F.; Chunadra, A.G.; Yunakov, N.N.

2000-01-01

In the work the method of forming of low energy ion streams near the sample surface with separating the generation area of plasma and the acceleration area of ion is offered.It allows to lower pressure in acceleration area essentially (0.01 Pa and below).The separating of the areas takes place at the expense of vacuum resistance in a plasma generating device.The dependence of plasma parameters on exterior parameters of the device is determined and the way of the further decreasing of working pressure in the modification area up to 10 -3 - 10 -4 Pa are shown

Brookhaven four-stage accel-decel production of low-energy highly stripped heavy ions

International Nuclear Information System (INIS)

Barrette, J.; Thieberger, P.

1981-01-01

The dual MP tandem facility at Brookhaven has been used in a four-stage accel-decel mode to produce highly stripped S ion beams (Q = 10-16 + ). Fully stripped S ions were obtained at energies down to 8 MeV. The low energy limit is presently due to the inclined field configuration of the last acceleration tube

Corrosion behavior of low energy, high temperature nitrogen ion ...

Indian Academy of Sciences (India)

Corrosion behavior of low energy, high temperature nitrogen ion-implanted AISI 304 stainless steel. M GHORANNEVISS1, A SHOKOUHY1,∗, M M LARIJANI1,2,. S H HAJI HOSSEINI 1, M YARI1, A ANVARI4, M GHOLIPUR SHAHRAKI1,3,. A H SARI1 and M R HANTEHZADEH1. 1Plasma Physics Research Center, Science ...

Auger vs resonance neutralization in low energy He+ ion scattering

International Nuclear Information System (INIS)

Woodruff, D.P.

1983-01-01

He + ions incident on a metal surface can neutralize either by an Auger or resonant charge exchange. While the Auger process has always been thought to be dominant, recent theoretical interest in the simpler one-electron resonance process has led to suggestions that this alone can account for the neutralization seen in low energy He + ion scattering. In this paper this assertion is analysed by looking at the wider information available on charge exchange processes for He + ion scattering through comparison with Li + ion scattering, the importance of multiple scattering in both these scattering experiments and the results of ion neutralization spectroscopy. These lead to the conclusion that while resonance neutralization to produce metastable He* may well occur at a substantial rate in He + ion scattering, the dominant process leading to loss of ions from the final scattered signal is Auger neutralization as originally proposed. (author)

On the modification of metal/ceramic interfaces by low energy ion/atom bombardment during film growth

International Nuclear Information System (INIS)

Rigsbee, J.M.; Scott, P.A.; Knipe, R.K.; Hock, V.F.

1986-01-01

Elemental Cu and Ti films have been deposited onto ceramic substrates with a plasma-aided physical vapor deposition (ion-plating) process. This paper discusses how the structure and chemistry of the metallic film and the metal/ceramic interface are modified by low energy ion and neutral atom bombardment. Emphasis is placed on determining how low energy ion/neutral atom bombardment affects the strength of the metal/ceramic interface. Analyses of the film, interface and substrate regions have employed scanning Auger microprobe, secondary ion mass spectroscopy, SEM/STEM-energy dispersive X-ray and TEM/STEM imaging and microdiffraction techniques. (Auth.)

Modern trends in ion source development for low-energy accelerators. Final report of a consultants' meeting

International Nuclear Information System (INIS)

1998-01-01

The IAEA consultative meeting was held to review the status of ion source development for accelerators having output energies less than 100 MeV (low-energy accelerators). Terms of reference for the meeting were to review the status of ion source development for several different types of low-energy accelerators (Van de Graaff, cyclotron, sealed-tube neutron generator, ion implanter, etc.) and to highlight any recent advances in this field. Individual abstracts were prepared for 5 papers presented at this meeting

Mechanical properties of silicon oxynitride thin films prepared by low energy ion beam assisted deposition

International Nuclear Information System (INIS)

Shima, Yukari; Hasuyama, Hiroki; Kondoh, Toshiharu; Imaoka, Yasuo; Watari, Takanori; Baba, Koumei; Hatada, Ruriko

1999-01-01

Silicon oxynitride (SiO x N y ) films (0.1-0.7 μm) were produced on Si (1 0 0), glass and 316L stainless steel substrates by ion beam assisted deposition (IBAD) using Si evaporation and the concurrent bombardment with a mixture of 200 eV N 2 and Ar, or O 2 and Ar ions. Adhesion was evaluated by pull-off tests. Film hardness was measured by a nanoindentation system with AFM. The measurement of internal stress in the films was carried out by the Stoney method. The film structure was examined by GXRD. XPS was employed to measure the composition of films and to analyze the chemical bonds. The dependence of mechanical properties on the film thickness and the processing temperature during deposition was studied. Finally, the relations between the mechanical properties of the films and the correlation with corrosion-protection ability of films are discussed and summarized

Space charge and working point studies in the CERN Low Energy Ion Ring

CERN Document Server

Huschauer, A; Hancock, S; Kain, V

2017-01-01

The Low Energy Ion Ring (LEIR) is at the heart ofCERN’s heavy ion physics programme and was designed toprovide the high phase space densities required by the exper-iments at the Large Hadron Collider (LHC). LEIR is the firstsynchrotron of the LHC ion injector chain and it receives aquasi-continuous pulse of lead ions (Pb54+) from Linac3, ex-ploiting a sophisticated multi-turn injection scheme in bothtransverse and longitudinal planes. Seven of these pulses areinjected and accumulated, which requires continuous elec-tron cooling (EC) at low energy to decrease the phase spacevolume of the circulating beam in between two injections.Subsequently, the coasting beam is adiabatically capturedin two bunches, which are then accelerated and extractedtowards the Proton Synchrotron (PS). Figure 1 shows theLEIR magnetic cycle and the different steps required forbeam production.

Deep-level transient spectroscopy of low-energy ion-irradiated silicon

DEFF Research Database (Denmark)

Kolkovsky, Vladimir; Privitera, V.; Nylandsted Larsen, Arne

2009-01-01

 During electron-gun deposition of metal layers on semiconductors, the semiconductor is bombarded with low-energy metal ions creating defects in the outermost surface layer. For many years, it has been a puzzle why deep-level transient spectroscopy spectra of the as-deposited, electron-gun evapor...

A review of low income energy assistance measures adopted in other jurisdictions

International Nuclear Information System (INIS)

2008-01-01

Low-income energy assistance programs (LIEPs) have been established and implemented in many jurisdictions to help make electricity and natural gas more affordable. Low-income programs also serve many other public interest goals, such as safeguarding and protecting the public health and welfare of the citizens; augmenting incomes or standards of living for the lowest income energy customers; encouraging conservation and more efficient use of energy resources; reducing customer care costs for utilities; reducing uncollectible accounts and bad debt expense for utilities; and reducing carbon emissions and greenhouse gas levels. This report contained a summary of the policies, programs, and measures that have been implemented, mandated, or allowed by regulators in other jurisdictions to assist low-income energy consumers with electricity and natural gas costs. The report categorized the differing low income policies and programs that have been implemented and examined the effectiveness of those policies and programs as measured by the costs and benefits, as well the level of customer participation. These categories included rate discounts or waivers; modified rate designs; alternative billing methods; customer rebates; conservation and demand side management programs; budget or equal billing; payment plans for past due accounts; waivers of late payment charges; waivers or reductions of customer security deposits; limits on disconnections; and reduced or waived fees for reconnections. The report covered regulatory jurisdictions, including those in Canada, the United States, the United Kingdom, Australia, New Zealand, France, Spain, and Finland. The report also discussed the role of regulators, utilities, charitable organizations, and other interested parties in developing and implementing low-income energy assistance programs that were cost-effective and efficient. It was concluded that, in addition to rate discounts or waivers of the fixed monthly service charge, many

A radio frequency ring electrode cooler for low-energy ion beams

International Nuclear Information System (INIS)

Heinz, S.; Aeystoe, J.; Habs, D.; Hegewisch, S.; Huikari, J.; Nieminen, A.; Rinta-Antila, S.; Schumann, M.; Szerypo, J.

2004-01-01

We are investigating a new concept for ion confinement while buffer-gas-cooling low-energy ion beams. Instead of applying the well-established technique of Radio Frequency Quadrupoles (RFQs) where the ions are transversely confined by a quadratic-pseudo potential we are using a stack of thin ring electrodes supplied by an RF field (RF funnel) which creates a box-shaped potential well. In Monte Carlo simulations we have investigated the transmission behavior and cooling performance of the RF funnel. First experimental investigations with ion currents up to 20 nA revealed a promising transmission characteristic which qualifies the RF funnel as high-current cooler

Pre-compound emission in low-energy heavy-ion interactions

Directory of Open Access Journals (Sweden)

Kumar Sharma Manoj

2017-01-01

Full Text Available Recent experimental studies have shown the presence of pre-compound emission component in heavy ion reactions at low projectile energy ranging from 4 to 7 MeV/nucleons. In earlier measurements strength of the pre-compound component has been estimated from the difference in forward-backward distributions of emitted particles. Present measurement is a part of an ongoing program on the study of reaction dynamics of heavy ion interactions at low energies aimed at investigating the effect of momentum transfer in compound, precompound, complete and incomplete fusion processes in heavy ion reactions. In the present work on the basis of momentum transfer the measurement of the recoil range distributions of heavy residues has been used to decipher the components of compound and pre-compound emission processes in the fusion of 16O projectile with 159Tb and 169Tm targets. The analysis of recoil range distribution measurements show two distinct linear momentum transfer components corresponding to pre-compound and compound nucleus processes are involved. In order to obtain the mean input angular momentum associated with compound and pre-compound emission processes, an online measurement of the spin distributions of the residues has been performed. The analysis of spin distribution indicate that the mean input angular momentum associated with pre-compound products is found to be relatively lower than that associated with compound nucleus process. The pre-compound components obtained from the present analysis are consistent with those obtained from the analysis of excitation functions.

Pre-compound emission in low-energy heavy-ion interactions

Science.gov (United States)

Sharma, Manoj Kumar; Shuaib, Mohd.; Sharma, Vijay R.; Yadav, Abhishek; Singh, Pushpendra P.; Singh, Devendra P.; Unnati; Singh, B. P.; Prasad, R.

2017-11-01

Recent experimental studies have shown the presence of pre-compound emission component in heavy ion reactions at low projectile energy ranging from 4 to 7 MeV/nucleons. In earlier measurements strength of the pre-compound component has been estimated from the difference in forward-backward distributions of emitted particles. Present measurement is a part of an ongoing program on the study of reaction dynamics of heavy ion interactions at low energies aimed at investigating the effect of momentum transfer in compound, precompound, complete and incomplete fusion processes in heavy ion reactions. In the present work on the basis of momentum transfer the measurement of the recoil range distributions of heavy residues has been used to decipher the components of compound and pre-compound emission processes in the fusion of 16O projectile with 159Tb and 169Tm targets. The analysis of recoil range distribution measurements show two distinct linear momentum transfer components corresponding to pre-compound and compound nucleus processes are involved. In order to obtain the mean input angular momentum associated with compound and pre-compound emission processes, an online measurement of the spin distributions of the residues has been performed. The analysis of spin distribution indicate that the mean input angular momentum associated with pre-compound products is found to be relatively lower than that associated with compound nucleus process. The pre-compound components obtained from the present analysis are consistent with those obtained from the analysis of excitation functions.

Kinetics of interaction from low-energy-ion bombardment of surfaces

International Nuclear Information System (INIS)

Horton, C.C.

1988-01-01

The kinetics of interaction from low energy oxygen ion bombardment of carbon and Teflon surfaces have been investigated. The surfaces were bombarded with 4.5 to 93 eV oxygen ions and emitted species were observed with a mass spectrometer. To obtain the kinetic information, the ion beam was square pulse modulated and reaction products were observed as a function of time. The kinetic information is contained in the response of the emitted species to the pulsed ion beam. Oxygen bombardment of carbon produced CO in three parallel branches with each following an adsorption-desorption process. The fast branch, with a rate constants of 12,000/sec, appeared to be sputter induced an was absent below about 19 eV. The medium and slow branches, with rate constants of 850/sec and 45/sec respectively, has little energy dependence and appeared to be due to chemical sputtering from two sites. The ratio of the fraction of the medium branch to that of the slow was constant at 1:3. The bombardment of Teflon produced CF in two parallel branches, with one following a series process and the other an adsorb-desorb process. The rate constant of the other branch were 22,000/sec and 7,000/sec and the rate constant of the other branch was 90/sec. The total signal fell monotonically with decreasing ion energy with the fraction for each branch holding constant at 71% for the series and 29% for the adsorb-desorb

Electron cooling of PB$^{54+}$ ions in the low energy ion ring (LEIR)

CERN Document Server

Bosser, Jacques; Chanel, M; MacCaferri, R; Maury, S; Möhl, D; Molinari, G; Tranquille, G

1998-01-01

For the preparation of dense bunches of lead ions for the LHC, electron cooling will be essential for accumula tion in a storage ring at 4.2 MeV/u. Tests have been carried out on the LEAR ring (renamed LEIR for Low Energy Ion Ring) in order to determine the optimum parameters for a future state-of-the-art electron cooling device which would be able to cool linac pulses of lead ions in less than 100 ms. The experiments focused on the generation of a stable high intensity electron beam that is needed to free space in both longitudinal and transverse phase space for incoming pulses. Investigations on the ion beam lifetime in the presence of the electron beam and on the dependency of the cooling times on the optical settings of the storage ring will also be discussed. This paper concentrates on the cooling aspects with the multiturn injection, vacuum, and high intensity aspects discussed in a companion paper at this conference.

Synthesis of 5'-CMP and 5'-dCMP in aqueous solution induced by low energy ions implantation

International Nuclear Information System (INIS)

Shi Huaibin; Shao Chunlin; Wang Xiangqin; Yu Zengliang

2001-01-01

Low energy N + ions produced by N 2 are accelerated and then introduced into aqueous solution to induce chemical reactions. This process avoids the need of a vacuum chamber and makes it possible to investigate the actions of low energy ions in aqueous solution. In order to explore prebiotic synthesis of nucleotide via reaction between low energy ions and aqueous solution under the primitive earth conditions, low energy N + is implanted into aqueous solution containing cytosine, D-ribose, D-2-deoxyribose and NH 4 H 2 PO 4 . It is confirmed that 5'-CMP and 5'-dCMP are produced by HPLC and 1 H-NMR analyses. The relation between yields of 5'-CMP and 5'-dCMP and irradiation time has been obtained

Nanometer-size surface modification produced by single, low energy, highly charged ions

International Nuclear Information System (INIS)

Stockli, M.P.

1994-01-01

Atomically flat surfaces of insulators have been bombarded with low energy, highly charged ions to search for nanometer-size surface modifications. It is expected that the high electron deficiency of highly charged ions will capture and/or remove many of the insulator's localized electrons when impacting on an insulating surface. The resulting local electron deficiency is expected to locally disintegrate the insulator through a open-quotes Coulomb explosionclose quotes forming nanometer-size craters. Xe ions with charge states between 10+ and 45+ and kinetic energies between 0 and 10 keV/q were obtained from the KSU-CRYEBIS, a CRYogenic Electron Beam Ion Source and directed onto various insulating materials. Mica was favored as target material as atomically flat surfaces can be obtained reliably through cleaving. However, the authors observations with an atomic force microscope have shown that mica tends to defoliate locally rather than disintegrate, most likely due to the small binding forces between adjacent layers. So far the authors measurements indicate that each ion produces one blister if the charge state is sufficiently high. The blistering does not seem to depend very much on the kinetic energy of the ions

On mechanism of low-energy heavy ions scattering on a target surface with small atomic mass

Energy Technology Data Exchange (ETDEWEB)

Umarov, F.F. E-mail: farid1945@yahoo.com; Bazarbaev, N.N.; Kudryashova, L.B.; Krylov, N.M

2002-11-01

In the present work, an experimental study of low-energy (E{sub 0}=20-500 eV) heavy Cs{sup +} ions scattering on target surfaces with small atomic masses (Al, Si, Ni) has been performed for more accurate definition of mechanism of scattering and evaluation of an opportunity for use of heavy ions scattering as a tool of surface layer analysis. It is shown that the dependence of the relative energies of scattered ions versus the initial energy E/E{sub 0} (E{sub 0}) for Si (E{sub b}=4.64 eV/atom) and Ni (E{sub b}=4.43 eV/atom) approximately coincide despite the fact that the mass of Ni atom is twice as large as that of the Si atom mass. At the same time their binding energies E{sub b} are approximately equal to each other. It is found that the scattering angles of Cs{sup +} ions considerably exceed a limiting scattering angle {theta}{sub lim} in a single collision. It has been established that the scattering of low-energy heavy ions by light targets is described by a non-binary mechanism of many-particle interactions (simultaneous ion interaction with several target atoms). It has been shown that during the many-particle interactions the structure of energy spectra disappears; high relative energy of scattering ions and their dependence on energy of bombardment is observed. It has been found that the energy of scattered ions depends on binding energy, melting temperature and packing density of target atoms.

Improved four-stage accel-decel production of low-energy stripped heavy ions

International Nuclear Information System (INIS)

Thieberger, P.; Barrette, J.; Johnson, B.M.; Jones, K.W.; Meron, M.; Wegner, H.E.

1982-01-01

The two model MP Tandem Van de Graaff accelerators at Brookhaven have been used in a four-stage accel-decel configuration to produce highly stripped low energy heavy ions. The performance in this mode of operation has now been substantially improved by modifications of the second accelerator. The inclined field acceleration tube electrodes at the exit of this accelerator were replaced by straight electrodes, the vacuum was improved and the maximum negative terminal potential was increased. Higher intensity beams of heavier highly stripped ions can now be produced at lower energies than before

New improvements on the Kansas State University cryogenic electron beam ion source, a user facility for low energy, highly charged ions

International Nuclear Information System (INIS)

Stockli, M. P.; Carnes, K.; Cocke, C. L.; DePaola, B. D.; Ehrenreich, T.; Fehrenbach, C.; Fry, D.; Gibson, P. E.; Kelly, S.; Lehnert, U.

2000-01-01

The Kansas State University cryogenic electron beam ion source supplies low energy ion beams to users of the Department of Energy user facility for highly charged ions. The ions escape the source with an initial energy between 1.6 and 5 kV per charge and are analyzed in a 90 degree sign dipole magnet located on the high voltage platform. When leaving the platform the ions can be accelerated by up to 160 kV per charge or can be decelerated to about 20% of their initial energy, covering 2.5 orders of magnitude. We are in the process of adding another order of magnitude to the range of available ion energies as a newly installed lens allows for deceleration down to a very few percent of the initial energy. In addition we present the current microbunching and chopping system which has been substantially improved over the past 2 yr. (c) 2000 American Institute of Physics

Channel for Applied Investigations on Low Energy Ion Beams of Cyclotron DC-60

CERN Document Server

Gikal, B N; Borisenko, A N; Fateev, A A; Gulbekyan, G G; Kalagin, I V; Kazacha, V I; Kazarinov, N Yu; Kolesov, I V; Lebedev, N I; Lysukhin, S N; Melnikov, V N

2006-01-01

The channel intended for carrying out applied investigations on the low energy ion beams having the kinetic energy 25 $Z/A$ keV/a.u. and transported from the ECR-source to a target is worked out. The channel structure and parameters of all its optics elements are defined. The calculation results of different ion types transportation are given. It is shown that ions having the ratio of their mass to charge Z/A=2-20 can be transported in the worked out channel with enough high expected efficiency. At that the ion beam diameter on the target is $\\sim$40 mm. The characteristics of the basic optical elements of the channel are also given.

A highly sensitive CaF{sub 2}:Dy nanophosphor as an efficient low energy ion dosimetry

Energy Technology Data Exchange (ETDEWEB)

Bhadane, Mahesh S.; Hareesh, K.; Dahiwale, S.S.; Sature, K.R. [Microtron Accelerator Laboratory, Department of Physics, Savitribai Phule Pune University, Pune 411007 (India); Patil, B.J. [Department of Physics, Abasaheb Garware College, Pune 411004 (India); Asokan, K.; Kanjilal, D. [Inter University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi 110067 (India); Bhoraskar, V.N. [Microtron Accelerator Laboratory, Department of Physics, Savitribai Phule Pune University, Pune 411007 (India); Dhole, S.D., E-mail: sanjay@physics.unipune.ac.in [Microtron Accelerator Laboratory, Department of Physics, Savitribai Phule Pune University, Pune 411007 (India)

2016-11-01

Highlights: • CaF{sub 2}:Dy nanophosphor synthesized by chemical co-precipitation route. • Phosphors are irradiated by H, Ar and N low energy ions at different fluences. • LEBI irradiated phosphors are characterized by XRD, TEM, FTIR and PL spectroscopy. • First time report to LEIB irradiated for thermoluminescence dosimetric applications. - Abstract: Dysprosium doped calcium fluoride (CaF{sub 2}:Dy) powers synthesized by co-precipitation method were irradiated with low energy ion beams (LEIB) viz. 100 keV H, 200 keV Ar and 350 keV N beams at different fluences and demonstrated for low energy ion dosimetric application. X-ray Diffraction and Transmission electron microscopy revealed the formation of highly crystalline cubic structured particles with size ∼45–50 nm. FTIR spectra of the CaF{sub 2}:Dy samples show changes of some bonds such as N–O asymmetric, C–F bonding and C–H aromatic contain stretching mode after LEIB irradiation. The thermoluminescence (TL) glow curve peaks were observed at 207 °C for Ar ion, at 203 °C for H ion and at 216 °C and 270 °C for N ion. It has been found that CaF{sub 2}:Dy nanophosphor shows a linear response with minimum fading for all the ion species. Computerized Glow Curve Deconvolution was performed for TL curve of high fluence ion irradiated nanophosphor to estimate the trapping parameters and the respective figure of merit (FOM) found to be very appropriate for all the nanophosphor. These results indicated that the CaF{sub 2}:Dy can be used as a low energy ion detector or dose.

Emittance scanner for intense low-energy ion beams

International Nuclear Information System (INIS)

Allison, P.W.; Sherman, J.D.; Holtkamp, D.B.

1983-01-01

An emittance scanner has been developed for use with low-energy H - ion beams to satisfy the following requirements: (1) angular resolution of +-1/2 mrad, (2) small errors from beam space charge, and (3) compact and simple design. The scanner consists of a 10-cm-long analyzer containing two slits and a pair of electric deflection plates driven by a +-500-V linear ramp generator. As the analyzer is mechanically driven across the beam, the front slit passes a thin ribbon of beam through the plates. The ion transit time is short compared with the ramp speed; therefore, the initial angle of the ions that pass through the rear slit is proportional to the instantaneous ramp voltage. The current through the rear slit then is proportional to the phase-space density d 2 i/dxdx'. The data are computer-analyzed to give, for example, rms emittance and phase-space density contours. Comparison of measured data with those calculated from a prepared (collimated) phase space is in good agreement

Ge nano-layer fabricated by high-fluence low-energy ion implantation

International Nuclear Information System (INIS)

Lu Tiecheng; Dun Shaobo; Hu Qiang; Zhang Songbao; An Zhu; Duan Yanmin; Zhu Sha; Wei Qiangmin; Wang Lumin

2006-01-01

A Ge nano-layer embedded in the surface layer of an amorphous SiO 2 film was fabricated by high-fluence low-energy ion implantation. The component, phase, nano-structure and luminescence properties of the nano-layer were studied by means of Rutherford backscattering, glancing incident X-ray diffraction, laser Raman scattering, transmission electron microscopy and photoluminescence. The relation between nano-particle characteristics and ion fluence was also studied. The results indicate that nano-crystalline Ge and nano-amorphous Ge particles coexist in the nano-layer and the ratio of nano-crystalline Ge to nano-particle Ge increases with increasing ion fluence. The intensity of photoluminescence from the nano-layer increases with increasing ion fluence also. Prepared with certain ion fluences, high-density nano-layers composed of uniform-sized nano-particles can be observed

Studies on low energy ion-atom collisions by means of electron-spectroscopy

International Nuclear Information System (INIS)

Hirosi Suzuki

1991-01-01

The typical results of studies on autoionization processes produced by low energy ion-atom collisions are given by means of the ejected electron spectroscopy, which have been performed by Atomic Physics Group of Sophia University

Low-Energy Electrons Emitted in Ion Collisions with Thin Foils

Science.gov (United States)

Kraemer, Michael; Kozhuharov, Christophor; Durante, Marco; Hagmann, Siegbert; Kraft, Gerhard; Lineva, Natallia

The realistic description of radiation damage after charged particle passage is an ongoing issue for both radiotherapy as well as space applications. In both areas of applied radiological science, living as well as nonliving matter is exposed to ionizing radiation, and it is of vital interest to predict the responses of structures like cells, detectors or electronic devices. In ion beam radiotherapy, for example, the Local Effect Model (LEM) is being used to calculate radiobiological effects with so far unprecedented versatility. This has been shown in the GSI radiotherapy pilot project and consequently this model has become the "industry standard" for treatment planning in subsequent commercial ion radiotherapy sites. The model has also been extended to nonliving matter, i.e. to describe the response of solid state detectors such as TLDs and films. A prerequisite for this model (and possibly similar ones) is the proper description of microscopic track structure and energy deposition. In particular, the area at a very low distance (¡20 nm) from the ion path needs special attention due to the locally very high dose and the rather limited experimental evidence for the shape of the dose distribution. The dose distribution at low distances is inevitably associated with the creation and transport of low-energy (sub-keV) electrons. While some data, elementary cross sections as well as dose distributions, exist for gaseous media, i.e. under single collision conditions, experimental data for the condensed phase are scarce. We have, therefore, launched a project aimed at systematic research of the energy and angular distributions of low-energy (sub-keV) electrons emitted from solids. These investigations com-prise creation as well as transport of low-energy electrons under multiple collision conditions and hence require accounting for the properties of the target, both bulk and surface, i.e. for the inherent inhomogeneity of the thickness and for the surface roughness. To

Previously hidden low-energy ions: a better map of near-Earth space and the terrestrial mass balance

International Nuclear Information System (INIS)

André, Mats

2015-01-01

This is a review of the mass balance of planet Earth, intended also for scientists not usually working with space physics or geophysics. The discussion includes both outflow of ions and neutrals from the ionosphere and upper atmosphere, and the inflow of meteoroids and larger objects. The focus is on ions with energies less than tens of eV originating from the ionosphere. Positive low-energy ions are complicated to detect onboard sunlit spacecraft at higher altitudes, which often become positively charged to several tens of volts. We have invented a technique to observe low-energy ions based on the detection of the wake behind a charged spacecraft in a supersonic ion flow. We find that low-energy ions usually dominate the ion density and the outward flux in large volumes in the magnetosphere. The global outflow is of the order of 10 26 ions s –1 . This is a significant fraction of the total number outflow of particles from Earth, and changes plasma processes in near-Earth space. We compare order of magnitude estimates of the mass outflow and inflow for planet Earth and find that they are similar, at around 1 kg s −1 (30 000 ton yr −1 ). We briefly discuss atmospheric and ionospheric outflow from other planets and the connection to evolution of extraterrestrial life. (invited comment)

Electron capture by highly charged low-velocity ions

International Nuclear Information System (INIS)

Cocke, C.L.; Dubois, R.; Justiniano, E.; Gray, T.J.; Can, C.

1982-01-01

This paper describes the use of a fast heavy ion beam to produce, by bombardment of gaseous targets, highly-charged low-velocity recoil ions, and the use of these secondary ions in turn as projectiles in studies of electron capture and ionization in low-energy collision systems. The interest in collisions involving low-energy highly-charged projectiles comes both from the somewhat simplifying aspects of the physics which attend the long-range capture and from applications to fusion plasmas, astrophysics and more speculative technology such as the production of X-ray lasers. The ions of interest in such applications should have both electronic excitation and center-of-mass energies in the keV range and cannot be produced by simply stripping fast heavy ion beams. Several novel types of ion source have been developed to produce low-energy highly-charged ions, of which the secondary ion recoil source discussed in this paper is one. (Auth.)

Nano-ranged low-energy ion-beam-induced DNA transfer in biological cells

Energy Technology Data Exchange (ETDEWEB)

Yu, L.D., E-mail: yuld@fnrf.science.cmu.ac.th [Thailand Center of Excellence in Physics, Commission on Higher Education, 328 Si Ayutthaya Road, Bangkok 10400 (Thailand); Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Wongkham, W. [Department of Biology, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Prakrajang, K. [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Sangwijit, K.; Inthanon, K. [Department of Biology, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Thongkumkoon, P. [Thailand Center of Excellence in Physics, Commission on Higher Education, 328 Si Ayutthaya Road, Bangkok 10400 (Thailand); Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Wanichapichart, P. [Thailand Center of Excellence in Physics, Commission on Higher Education, 328 Si Ayutthaya Road, Bangkok 10400 (Thailand); Membrane Science and Technology Research Center, Department of Physics, Faculty of Science, Prince of Songkla University, Hat Yai, Songkla 90112 (Thailand); Anuntalabhochai, S. [Department of Biology, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand)

2013-06-15

Low-energy ion beams at a few tens of keV were demonstrated to be able to induce exogenous macromolecules to transfer into plant and bacterial cells. In the process, the ion beam with well controlled energy and fluence bombarded living cells to cause certain degree damage in the cell envelope in nanoscales to facilitate the macromolecules such as DNA to pass through the cell envelope and enter the cell. Consequently, the technique was applied for manipulating positive improvements in the biological species. This physical DNA transfer method was highly efficient and had less risk of side-effects compared with chemical and biological methods. For better understanding of mechanisms involved in the process, a systematic study on the mechanisms was carried out. Applications of the technique were also expanded from DNA transfer in plant and bacterial cells to DNA transfection in human cancer cells potentially for the stem cell therapy purpose. Low-energy nitrogen and argon ion beams that were applied in our experiments had ranges of 100 nm or less in the cell envelope membrane which was majorly composed of polymeric cellulose. The ion beam bombardment caused chain-scission dominant damage in the polymer and electrical property changes such as increase in the impedance in the envelope membrane. These nano-modifications of the cell envelope eventually enhanced the permeability of the envelope membrane to favor the DNA transfer. The paper reports details of our research in this direction.

Nano-ranged low-energy ion-beam-induced DNA transfer in biological cells

International Nuclear Information System (INIS)

Yu, L.D.; Wongkham, W.; Prakrajang, K.; Sangwijit, K.; Inthanon, K.; Thongkumkoon, P.; Wanichapichart, P.; Anuntalabhochai, S.

2013-01-01

Low-energy ion beams at a few tens of keV were demonstrated to be able to induce exogenous macromolecules to transfer into plant and bacterial cells. In the process, the ion beam with well controlled energy and fluence bombarded living cells to cause certain degree damage in the cell envelope in nanoscales to facilitate the macromolecules such as DNA to pass through the cell envelope and enter the cell. Consequently, the technique was applied for manipulating positive improvements in the biological species. This physical DNA transfer method was highly efficient and had less risk of side-effects compared with chemical and biological methods. For better understanding of mechanisms involved in the process, a systematic study on the mechanisms was carried out. Applications of the technique were also expanded from DNA transfer in plant and bacterial cells to DNA transfection in human cancer cells potentially for the stem cell therapy purpose. Low-energy nitrogen and argon ion beams that were applied in our experiments had ranges of 100 nm or less in the cell envelope membrane which was majorly composed of polymeric cellulose. The ion beam bombardment caused chain-scission dominant damage in the polymer and electrical property changes such as increase in the impedance in the envelope membrane. These nano-modifications of the cell envelope eventually enhanced the permeability of the envelope membrane to favor the DNA transfer. The paper reports details of our research in this direction.

A high-flux low-energy hydrogen ion beam using an end-Hall ion source

NARCIS (Netherlands)

Veldhoven, J. van; Sligte, E. te; Janssen, J.P.B.

2016-01-01

Most ion sources that produce high-flux hydrogen ion beams perform best in the high energy range (keV). Alternatively, some plasma sources produce very-lowenergy ions (<< 10 eV). However, in an intermediate energy range of 10-200 eV, no hydrogen ion sources were found that produce high-flux beams.

Tailored ion energy distributions on plasma electrodes

International Nuclear Information System (INIS)

Economou, Demetre J.

2013-01-01

As microelectronic device features continue to shrink approaching atomic dimensions, control of the ion energy distribution on the substrate during plasma etching and deposition becomes increasingly critical. The ion energy should be high enough to drive ion-assisted etching, but not too high to cause substrate damage or loss of selectivity. In many cases, a nearly monoenergetic ion energy distribution (IED) is desired to achieve highly selective etching. In this work, the author briefly reviews: (1) the fundamentals of development of the ion energy distribution in the sheath and (2) methods to control the IED on plasma electrodes. Such methods include the application of “tailored” voltage waveforms on an electrode in continuous wave plasmas, or the application of synchronous bias on a “boundary electrode” during a specified time window in the afterglow of pulsed plasmas

On mechanism of low-energy heavy ions scattering on a target surface with small atomic mass

CERN Document Server

Umarov, F F; Kudryashova, L B; Krylov, N M

2002-01-01

In the present work, an experimental study of low-energy (E sub 0 =20-500 eV) heavy Cs sup + ions scattering on target surfaces with small atomic masses (Al, Si, Ni) has been performed for more accurate definition of mechanism of scattering and evaluation of an opportunity for use of heavy ions scattering as a tool of surface layer analysis. It is shown that the dependence of the relative energies of scattered ions versus the initial energy E/E sub 0 (E sub 0) for Si (E sub b =4.64 eV/atom) and Ni (E sub b =4.43 eV/atom) approximately coincide despite the fact that the mass of Ni atom is twice as large as that of the Si atom mass. At the same time their binding energies E sub b are approximately equal to each other. It is found that the scattering angles of Cs sup + ions considerably exceed a limiting scattering angle theta sub l sub i sub m in a single collision. It has been established that the scattering of low-energy heavy ions by light targets is described by a non-binary mechanism of many-particle inter...

Direct formation of thin films and epitaxial overlayers at low temperatures using a low-energy (10-500 eV) ion beam deposition system

International Nuclear Information System (INIS)

Zuhr, R.A.; Alton, G.D.; Appleton, B.R.; Herbots, N.; Noggle, T.S.; Pennycook, S.J.

1987-01-01

A low-energy ion beam deposition system has been developed at Oak Ridge National Laboratory and has been applied successfully to the growth of epitaxial films at low temperatures for a number of different elements. The deposition system utilizes the ion source and optics of a commercial ion implantation accelerator. The 35 keV mass- and energy-analyzed ion beam from the accelerator is decelerated in a four-element electrostatic lens assembly to energies between 10 and 500 eV for direct deposition onto a target under UHV conditions. Current densities on the order of 10 μA/cm 2 are achieved with good uniformity over a 1.4 cm diameter spot. The completed films are characterized by Rutherford backscattering, ion channeling, cross-section transmission electron microscopy, and x-ray diffraction. The effects of substrate temperature, ion energy, and substrate cleaning have been studied. Epitaxial overlayers which show good minimum yields by ion channeling (3 to 4%) have been produced at temperatures as low as 375 0 C for Si on Si(100) and 250 0 C for Ge on Ge(100) at growth rates that exceed the solid-phase epitaxy rates at these temperatures by more than an order of magnitude

The interaction of low energy ion beams with surfaces

International Nuclear Information System (INIS)

Carter, G.; Armour, D.G.

1981-01-01

Four of the most important physical processes which occur during ion plating and allied techniques (1) ion-induced (and energetic-atom-induced) desorption of adsorbed impurities from the substrate surface, (2) ion penetration and entrapment in the substrate and coating, (3) ion-induced sputtering of substrate and coating atoms and (4) recoil displacement of substrate and coating atoms leading to their intermixing. The ion and energetic atom energy range of importance is from thermal energies to the order of 1keV. Current understanding of these processes, supported by discussion of available experimental data, is reviewed. (Auth.)

Low-energy plasma immersion ion implantation to induce DNA transfer into bacterial E. coli

Energy Technology Data Exchange (ETDEWEB)

Sangwijit, K. [Biotechnology Unit, University of Phayao, Muang, Phayao 56000 (Thailand); Yu, L.D., E-mail: yuld@thep-center.org [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Thailand Center of Excellence in Physics, Commission on Higher Education, 328 Si Ayutthaya Road, Bangkok 10400 (Thailand); Sarapirom, S. [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Faculty of Science, Maejo University, Bang Khen, Chiang Mai 50290 (Thailand); Pitakrattananukool, S. [School of Science, University of Phayao, Muang, Phayao 56000 (Thailand); Anuntalabhochai, S. [Biotechnology Unit, University of Phayao, Muang, Phayao 56000 (Thailand)

2015-12-15

Plasma immersion ion implantation (PIII) at low energy was for the first time applied as a novel biotechnology to induce DNA transfer into bacterial cells. Argon or nitrogen PIII at low bias voltages of 2.5, 5 and 10 kV and fluences ranging from 1 × 10{sup 12} to 1 × 10{sup 17} ions/cm{sup 2} treated cells of Escherichia coli (E. coli). Subsequently, DNA transfer was operated by mixing the PIII-treated cells with DNA. Successes in PIII-induced DNA transfer were demonstrated by marker gene expressions. The induction of DNA transfer was ion-energy, fluence and DNA-size dependent. The DNA transferred in the cells was confirmed functioning. Mechanisms of the PIII-induced DNA transfer were investigated and discussed in terms of the E. coli cell envelope anatomy. Compared with conventional ion-beam-induced DNA transfer, PIII-induced DNA transfer was simpler with lower cost but higher efficiency.

Self-organization processes and nanocluster formation in crystal lattices by low-energy ion irradiation

International Nuclear Information System (INIS)

Tereshko, I.; Abidzina, V.; Tereshko, A.; Glushchenko, V.; Elkin, I.

2007-01-01

The goal of this paper is to study self-organization processes that cause nanostructural evolution in nonlinear crystal media. The subjects of the investigation were nonlinear homogeneous and heterogeneous atom chains. The method of computer simulation was used to investigate the interaction between low-energy ions and crystal lattices. It was based on the conception of three-dimensional lattice as a nonlinear atom chain system. We showed that that in homogeneous atom chains critical energy needed for self-organization processes development is less than for nonlinear atom chain with already embedded clusters. The possibility of nanostructure formation was studied by a molecular dynamics method of nonlinear oscillations in atomic oscillator systems of crystal lattices after their low-energy ion irradiation. (authors)

Extraction of low-energy negative oxygen ions for thin film formation

International Nuclear Information System (INIS)

Vasquez, M. Jr.; Sasaki, D.; Kasuya, T.; Wada, M.; Maeno, S.

2011-01-01

Coextraction of low-energy positive and negative ions were performed using a plasma sputter-type ion source system driven by a 13.56 MHz radio frequency (rf) power. Titanium (Ti) atoms were sputtered out from a target and the sputtered neutrals were postionized in oxygen/argon (O 2 /Ar) plasma prior to extraction. The negative O ions were surface-produced and self-extracted. Mass spectral analyses of the extracted ion beams revealed the dependence of the ion current on the incident rf power, induced target bias and O 2 /Ar partial pressure ratio. Ti + current was found to be dependent on Ar + current and reached a saturation value with increasing O 2 partial pressure while the O - current showed a peak current at around 1:9 O 2 /Ar partial pressure ratio. Ti + current was several orders of magnitude higher than that of the O - current.

Oxide-nitride-oxide dielectric stacks with Si nanoparticles obtained by low-energy ion beam synthesis

International Nuclear Information System (INIS)

Ioannou-Sougleridis, V; Dimitrakis, P; Vamvakas, V Em; Normand, P; Bonafos, C; Schamm, S; Mouti, A; Assayag, G Ben; Paillard, V

2007-01-01

Formation of a thin band of silicon nanoparticles within silicon nitride films by low-energy (1 keV) silicon ion implantation and subsequent thermal annealing is demonstrated. Electrical characterization of metal-insulator-semiconductor capacitors reveals that oxide/Si-nanoparticles-nitride/oxide dielectric stacks exhibit enhanced charge transfer characteristics between the substrate and the silicon nitride layer compared to dielectric stacks using unimplanted silicon nitride. Attractive results are obtained in terms of write/erase memory characteristics and data retention, indicating the large potential of the low-energy ion-beam-synthesis technique in SONOS memory technology

Utilizing Neon Ion Microscope for GaSb nanopatterning studies: Nanostructure formation and comparison with low energy nanopatterning

International Nuclear Information System (INIS)

El-Atwani, Osman; Huynh, Chuong; Norris, Scott

2016-01-01

Graphical abstract: - Highlights: • Carl Zeiss-neon ion microscope was used to irradiated GaSb surfaces with 5 keV neon. • In-situ imaging using helium beam and ex-situ imaging using an electron beam were performed. • Differences in imaging output between the helium and the electron beam were observed. • Transition occurred in the nanostructure type and formation mechanism as the energy is changed from 2 to 5 keV. • Collision cascade simulations suggested a transition toward bulk-driven mechanisms. - Abstract: Low energy irradiation of GaSb surfaces has been shown to lead to nanopillar formation. Being performed ex-situ, controlling the parameters of the ion beam for controlled nanopattern formation is challenging. While mainly utilized for imaging and cutting purposes, the development of multibeam (helium/neon) ion microscopes has opened the path towards the use of these microscopes for in-situ ion irradiation and nanopatterning studies. In this study, in-situ irradiation (neon ions)/imaging (helium ions) of GaSb surfaces is performed using Carl Zeiss-neon ion microscope at low energies (5 and 10 keV). Imaging with helium ions, nanodots were shown to form at particular fluences after which are smoothed. Ex-situ imaging with SEM showed nanopore formation of size controlled by the ion energy and fluence. Compared to lower energy ex-situ neon ion irradiation at similar fluxes, where nanopillars are formed, the results demonstrated a transition in the nanostructure type and formation mechanism as the energy is changed from 2 to 5 keV. Simulations show an increase in the ballistic diffusion and a decrease in the strength of phase separation as a function of ion energy in agreement with the suppression of nanopillar formation at higher energies. Collision cascade simulations suggest a transition toward bulk-driven mechanisms.

Utilizing Neon Ion Microscope for GaSb nanopatterning studies: Nanostructure formation and comparison with low energy nanopatterning

Energy Technology Data Exchange (ETDEWEB)

El-Atwani, Osman, E-mail: oelatwan25@gmail.com [School of Nuclear Engineering, Purdue University, West Lafayette, Indiana 47907 (United States); Huynh, Chuong [Carl Zeiss Microscopy, LLC, One Corporation Way, Peabody, MA 01960 (United States); Norris, Scott [Department of Mathematics, Southern Methodist University, Dallas, TX 75275 (United States)

2016-05-01

Graphical abstract: - Highlights: • Carl Zeiss-neon ion microscope was used to irradiated GaSb surfaces with 5 keV neon. • In-situ imaging using helium beam and ex-situ imaging using an electron beam were performed. • Differences in imaging output between the helium and the electron beam were observed. • Transition occurred in the nanostructure type and formation mechanism as the energy is changed from 2 to 5 keV. • Collision cascade simulations suggested a transition toward bulk-driven mechanisms. - Abstract: Low energy irradiation of GaSb surfaces has been shown to lead to nanopillar formation. Being performed ex-situ, controlling the parameters of the ion beam for controlled nanopattern formation is challenging. While mainly utilized for imaging and cutting purposes, the development of multibeam (helium/neon) ion microscopes has opened the path towards the use of these microscopes for in-situ ion irradiation and nanopatterning studies. In this study, in-situ irradiation (neon ions)/imaging (helium ions) of GaSb surfaces is performed using Carl Zeiss-neon ion microscope at low energies (5 and 10 keV). Imaging with helium ions, nanodots were shown to form at particular fluences after which are smoothed. Ex-situ imaging with SEM showed nanopore formation of size controlled by the ion energy and fluence. Compared to lower energy ex-situ neon ion irradiation at similar fluxes, where nanopillars are formed, the results demonstrated a transition in the nanostructure type and formation mechanism as the energy is changed from 2 to 5 keV. Simulations show an increase in the ballistic diffusion and a decrease in the strength of phase separation as a function of ion energy in agreement with the suppression of nanopillar formation at higher energies. Collision cascade simulations suggest a transition toward bulk-driven mechanisms.

Calculations on Electron Capture in Low Energy Ion-Molecule Collisions

Energy Technology Data Exchange (ETDEWEB)

Stancil, P.C. [Oak Ridge National Lab., TN (United States); Zygelman, B. [W.M. Keck Lab. for Computational Physics, Univ. of Nevada, Las Vegas, NV (United States); Kirby, K. [Harvard-Smithsonian Center for Astrophysics, Cambridge, MA (United States)

1997-12-31

Recent progress on the application of a quantal, molecular-orbital, close-coupling approach to the calculation of electron capture in collisions of multiply charged ions with molecules is discussed. Preliminary results for single electron capture by N{sup 2+} with H{sub 2} are presented. Electron capture by multiply charged ions colliding with H{sub 2} is an important process in laboratory and astrophysical plasmas. It provides a recombination mechanism for multiply charged ions in x-ray ionized astronomical environments which may have sparse electron and atomic hydrogen abundances. In the divertor region of a tokamak fusion device, charge exchange of impurity ions with H{sub 2} plays a role in the ionization balance and the production of radiative energy loss leading to cooling, X-ray and ultraviolet auroral emission from Jupiter is believed to be due to charge exchange of O and S ions with H{sub 2} in the Jovian atmosphere. Solar wind ions interacting with cometary molecules may have produced the x-rays observed from Comet Hyakutake. In order to model and understand the behavior of these environments, it is necessary to obtain total, electronic state-selective (ESS), and vibrational (or rotational) state-selective (VSS) capture cross sections for collision energies as low as 10 meV/amu to as high as 100 keV/amu in some instances. Fortunately, charge transfer with molecular targets has received considerable experimental attention. Numerous measurements have been made with flow tubes, ion traps, and ion beams. Flow tube and ion trap studies generally provide information on rate coefficients for temperatures between 800 K and 20,000 K. In this article, we report on the progress of our group in implementing a quantum-mechanical Molecular Orbital Close Coupling (MOCC) approach to the study of electron capture by multiply charged ions in collisions with molecules. We illustrate this with a preliminary investigation of Single Electron Capture (SEC) by N{sup 2+} with H

Subthreshold pion production study with heavy ions at low and medium energy

International Nuclear Information System (INIS)

Rebreyend, D.

1988-02-01

In the domain of subthreshold pion production with heavy ions at low and medium energy (40-100 MeV/u), only Π 0 have been up to now, extensively studied. The incompleteness of the charged pion data and especially the lack of results for pions of energy less than 30 MeV have led to conceive the magnetic spectrometer SPIC. In the present work, we demonstrate that this spectrometer is particularly well suited for the detection of low energy charged pions (Inferior threshold of detection: T Π = 7 MeV), emitted around 0 0 in heavy ion collisions. Principle and performances, successfully tested at 38 and 93 MeV/u, are described in detail. The main characteristics of a Π 0 spectrometer, that was used to realize a comparative experiment of Π 0 production, are then given. The last chapter is devoted to experimental results. First, we present the results obtained with the 16 0 beam of 38 MeV/u of the SARA accelerator, in charged pions (Al and Ni targets) and in Π 0 (Al and Au targets). A comparison of the data Π - /Π 0 seems to indicate that coulomb effects are surprisingly small. Finally, we report the data obtained with the 16 0 beam of 93 MeV/u of GANIL. In contrast with low energy data, coulomb effects are very strong (ratio Π - /Π + = 100 for pions of low energy with heavy targets) and allowed us to extract informations on the geometry of the collision [fr

The energy-deposition model. Electron loss of heavy ions in collisions with neutral atoms at low and intermediate energies

International Nuclear Information System (INIS)

Shevelko, V.P.; Litsarev, M.S.; Kato, D.; Tawara, H.

2010-09-01

Single- and multiple-electron loss processes in collisions of heavy many-electron ions (positive and negative) in collisions with neutral atoms at low and intermediate energies are considered using the energy-deposition model. The DEPOSIT computer code, created earlier to calculate electron-loss cross sections at high projectile energies, is extended for low and intermediate energies. A description of a new version of DEPOSIT code is given, and the limits of validity for collision velocity in the model are discussed. Calculated electron-loss cross sections for heavy ions and atoms (N + , Ar + , Xe + , U + , U 28+ , W, W + , Ge - , Au - ), colliding with neutral atoms (He, Ne, Ar, W) are compared with available experimental and theoretical data at energies E > 10 keV/u. It is found that in most cases the agreement between experimental data and the present model is within a factor of 2. Combining results obtained by the DEPOSIT code at low and intermediate energies with those by the LOSS-R code at high energies (relativistic Born approximation), recommended electron-loss cross sections in a wide range of collision energy are presented. (author)

Ion beam assisted film growth

CERN Document Server

Itoh, T

2012-01-01

This volume provides up to date information on the experimental, theoretical and technological aspects of film growth assisted by ion beams.Ion beam assisted film growth is one of the most effective techniques in aiding the growth of high-quality thin solid films in a controlled way. Moreover, ion beams play a dominant role in the reduction of the growth temperature of thin films of high melting point materials. In this way, ion beams make a considerable and complex contribution to film growth. The volume will be essential reading for scientists, engineers and students working in thi

Ion beam studies. Part 1. The retardation of ion beams to very low energies in an implantation accelerator

International Nuclear Information System (INIS)

Freeman, J.H.; Temple, W.; Beanland, D.; Gard, G.A.

1976-02-01

The design and operation of a compact electrostatic lens for the retardation and focussing of high intensity beams of heavy ions down to energies in the range 10 to 1,000 eV is described. The use of such beams for low-energy ion implantation and for the production of uniform ion-deposited layers is outlined. The practical behaviour of the lens is shown to be in agreement with computer calculations and the theoretical model is used to delineate and explain the boundary conditions under which the focussing behaviour becomes anomalous. The calculated and measured effects of space-charge repulsion on the quality of focussing are compared and it is demonstrated that a simple retardation lens design can be effectively employed at high flux. (author)

On the defect structure due to low energy ion bombardment of graphite

Science.gov (United States)

Marton, D.; Bu, H.; Boyd, K. J.; Todorov, S. S.; Al-Bayati, A. H.; Rabalais, J. W.

1995-03-01

Graphite surfaces cleaved perpendicular to the c axis have been irradiated with low doses of Ar + ions at 50 eV kinetic energy and perpendicular incidence. Scanning tunneling micrographs (STM) of these irradiated surfaces exhibited dome-like features as well as point defects. These dome-like features retain undisturbed graphite periodicity. This finding is attributed to the stopping of ions between the first and second graphite sheets. The possibility of doping semiconductors at extremely shallow depths is raised.

Surface modifications of AISI 420 stainless steel by low energy Yttrium ions

Science.gov (United States)

Nassisi, Vincenzo; Delle Side, Domenico; Turco, Vito; Martina, Luigi

2018-01-01

In this work, we study surface modifications of AISI 420 stainless steel specimens in order to improve their surface properties. Oxidation resistance and surface micro-hardness were analyzed. Using an ion beam delivered by a Laser Ion Source (LIS) coupled to an electrostatic accelerator, we performed implantation of low energy yttrium ions on the samples. The ions experienced an acceleration passing through a gap whose ends had a potential difference of 60 kV. The gap was placed immediately before the samples surface. The LIS produced high ions fluxes per laser pulse, up to 3x1011 ions/cm2, resulting in a total implanted flux of 7x1015 ions/cm2. The samples were characterized before and after ion implantation using two analytical techniques. They were also thermally treated to investigate the oxide scale. The crystal phases were identified by an X-ray diffractometer, while the micro-hardness was assayed using the scratch test and a profilometer. The first analysis was applied to blank, implanted and thermally treated sample surface, while the latter was applied only to blank and implanted sample surfaces. We found a slight increase in the hardness values and an increase to oxygen resistance. The implantation technique we used has the advantages, with respect to conventional methods, to modify the samples at low temperature avoiding stray diffusion of ions inside the substrate bulk.

Surface modifications of AISI 420 stainless steel by low energy Yttrium ions

Directory of Open Access Journals (Sweden)

Nassisi Vincenzo

2018-01-01

Full Text Available In this work, we study surface modifications of AISI 420 stainless steel specimens in order to improve their surface properties. Oxidation resistance and surface micro-hardness were analyzed. Using an ion beam delivered by a Laser Ion Source (LIS coupled to an electrostatic accelerator, we performed implantation of low energy yttrium ions on the samples. The ions experienced an acceleration passing through a gap whose ends had a potential difference of 60 kV. The gap was placed immediately before the samples surface. The LIS produced high ions fluxes per laser pulse, up to 3x1011 ions/cm2, resulting in a total implanted flux of 7x1015 ions/cm2. The samples were characterized before and after ion implantation using two analytical techniques. They were also thermally treated to investigate the oxide scale. The crystal phases were identified by an X-ray diffractometer, while the micro-hardness was assayed using the scratch test and a profilometer. The first analysis was applied to blank, implanted and thermally treated sample surface, while the latter was applied only to blank and implanted sample surfaces. We found a slight increase in the hardness values and an increase to oxygen resistance. The implantation technique we used has the advantages, with respect to conventional methods, to modify the samples at low temperature avoiding stray diffusion of ions inside the substrate bulk.

Low energy cross section data for ion-molecule reactions in hydrogen systems and for charge transfer of multiply charged ions with atoms and molecules

International Nuclear Information System (INIS)

Okuno, Kazuhiko

2007-04-01

Systematic cross section measurements for ion-molecule reactions in hydrogen systems and for charge transfer of multiply charged ions in low energy collisions with atoms and molecules have been performed continuously by the identical apparatus installed with an octo-pole ion beam guide (OPIG) since 1980 till 2004. Recently, all of accumulated cross section data for a hundred collision systems has been entered into CMOL and CHART of the NIFS atomic and molecular numerical database together with some related cross section data. In this present paper, complicated ion-molecule reactions in hydrogen systems are revealed and the brief outlines of specific properties in low energy charge transfer collisions of multiply charged ions with atoms and molecules are introduced. (author)

15.0 MeV/u He2+ ion-induced low energy electrons from water vapor

International Nuclear Information System (INIS)

Okada, Y.; Sato, Y.; Soga, F.; Ohsawa, D.

2005-01-01

We present the absolute doubly differential cross sections (DDCS) of low-energy electrons and their angular distributions (20deg - 160deg ) produced in the collisions of 15.0 MeV/u He 2+ ions with water vapor. Details of the experiments by 6.0 and 10.0 MeV/u He 2+ ions were already reported in our previous paper, in which the total uncertainty (±13%) was discussed. This paper shows the absolute DDCS data (1 - 100 eV) by 15.0 MeV/u He 2+ ions, in which the cover surrounding the interaction region was changed to μ-metal from Cu, in order to suppress the residual magnetic field for measuring the low-energy electrons effectively. (author)

Low Li+ Insertion Barrier Carbon for High Energy Efficient Lithium-Ion Capacitor.

Science.gov (United States)

Lee, Wee Siang Vincent; Huang, Xiaolei; Tan, Teck Leong; Xue, Jun Min

2018-01-17

Lithium-ion capacitor (LIC) is an attractive energy-storage device (ESD) that promises high energy density at moderate power density. However, the key challenge in its design is the low energy efficient negative electrode, which barred the realization of such research system in fulfilling the current ESD technological inadequacy due to its poor overall energy efficiency. Large voltage hysteresis is the main issue behind high energy density alloying/conversion-type materials, which reduces the electrode energy efficiency. Insertion-type material though averted in most research due to the low capacity remains to be highly favorable in commercial application due to its lower voltage hysteresis. To further reduce voltage hysteresis and increase capacity, amorphous carbon with wider interlayer spacing has been demonstrated in the simulation result to significantly reduce Li + insertion barrier. Hence, by employing such amorphous carbon, together with disordered carbon positive electrode, a high energy efficient LIC with round-trip energy efficiency of 84.3% with a maximum energy density of 133 Wh kg -1 at low power density of 210 W kg -1 can be achieved.

Generation of electrical defects in ion beam assisted deposition of Cu(In,Ga)Se2 thin film solar cells

International Nuclear Information System (INIS)

Zachmann, H.; Puttnins, S.; Daume, F.; Rahm, A.; Otte, K.

2011-01-01

Thin films of Cu(In,Ga)Se 2 (CIGS) absorber layers for thin film solar cells have been manufactured on polyimide foil in a low temperature, ion beam assisted co-evaporation process. In the present work a set of CIGS thin films was produced with varying selenium ion energy. Solar cell devices have been manufactured from the films and characterized via admittance spectroscopy and capacitance-voltage profiling to determine the influence of the selenium ion energy on the electric parameters of the solar cells. It is shown that the impact of energetic selenium ions in the CIGS deposition process leads to a change in the activation energy and defect density and also in the spatial distribution of electrically active defects. For the interpretation of the results two defect models are taken into account.

Space Charge Compensation in the Linac4 Low Energy Beam Transport Line with Negative Hydrogen Ions

CERN Document Server

Valerio-Lizarraga, C; Leon-Monzon, I; Lettry, J; Midttun, O; Scrivens, R

2014-01-01

The space charge effect of low energy, unbunched ion beams can be compensated by the trapping of ions or electrons into the beam potential. This has been studied for the 45 keV negative hydrogen ion beam in the CERN Linac4 Low Energy Beam Tranport (LEBT) using the package IBSimu1, which allows the space charge calculation of the particle trajectories. The results of the beam simulations will be compared to emittance measurements of an H- beam at the CERN Linac4 3 MeV test stand, where the injection of hydrogen gas directly into the beam transport region has been used to modify the space charge compensation degree.

Drift-tube studies of ion-molecule reactions at low collision energies

International Nuclear Information System (INIS)

Chatterjee, B.K.

1988-01-01

This thesis presents experimental studies of ion-molecule reactions at low collision energies using two drift tube mass spectrometer apparatus. The reactions studied are (i) proton transfer from HeH + to ArH + , (ii) charge and ion transfer reactions of O 2 2+ with NO, CO 2 , Ne and O 2 + ( 4 π u ) with CO 2 , (iii) oxidation reactions of Zr + and ZrO + with NO, CO 2 and O 2 , (iv) vibrational quenching reactions of H 3 + with He, (v) termolecular clustering reactions of H 2 CN + and H 2 CN + (HCN) (with He as the third body), (vi) three body association reactions of H + and D + with He (with He as the third body) and (vii) termolecular association reaction of NO + with NO (with Ne as third body). All the reactions were studied at thermal energies (at room temperature), reactions of O 2 2+ with NO and CO 2 , Zr + with NO/CO 2 /O 2 were also studied at center-of-mass energies higher than thermal and the association reactions of H 2 CN + /H 2 CN + (HCN) with HCN and H + /D + with He were studied at low temperatures. In addition, the thesis presents model calculations for the sweep-out effect which is an instrumental effect. A super Langevin rate constant is introduced which is a higher-order correction to the Langevin model. A theoretical model for the three-body ion-atom association rate constant is presented in the appendix of the thesis

Ion-solid interaction at low energies: principles and application of quantitative ISS

International Nuclear Information System (INIS)

Niehus, H.; Spitzl, R.

1991-01-01

Quantitative surface analysis with low-energy (500-5000 eV) ion scattering spectroscopy is known to be difficult, most often because of strong charge transfer and multiple scattering effects occurring during ion-surface interaction. In order to avoid neutralization problems, either alkali primary ions or noble gas ions in combination with the detection of all scattered particles was applied. Multiple scattering occurs predominantly at forward scattering and might confound the analysis. Backward scattering (i.e. 180 o impact collision ion scattering) bypasses strongly the multiple scattering complication and has been used successfully for the analysis of a number of surface structures for metals, semiconductors and binary alloys. A simple triangulation concept gives access to mass-selective qualitative surface crystallography. Quantitative surface structures were determined by comparison with computer simulations. (author)

Tuning surface porosity on vanadium surface by low energy He{sup +} ion irradiation

Energy Technology Data Exchange (ETDEWEB)

Tripathi, J.K., E-mail: jtripat@purdue.edu; Novakowski, T.J.; Hassanein, A.

2016-08-15

Highlights: • Surface nanostructuring on vanadium surface using novel He{sup +} ion irradiation process. • Tuning surface-porosity using high-flux, low-energy He{sup +} ion irradiation at constant elevated sample temperature (823–173 K). • Presented top-down approach guarantees good contact between different crystallites. • Sequential significant enhancement in surface-pore edge size (and corresponding reduction in surface-pore density) with increasing sample temperature. - Abstract: In the present study, we report on tuning the surface porosity on vanadium surfaces using high-flux, low-energy He{sup +} ion irradiation as function of sample temperature. Polished, mirror-finished vanadium samples were irradiated with 100 eV He{sup +} ions at a constant ion-flux of 7.2 × 10{sup 20} ions m{sup −2} s{sup −1} for 1 h duration at constant sample temperatures in the wide range of 823–1173 K. Our results show that the surface porosity of V{sub 2}O{sub 5} (naturally oxidized vanadium porous structure, after taking out from UHV) is strongly correlated to the sample temperature and is highly tunable. In fact, the surface porosity significantly increases with reducing sample temperature and reaches up to ∼87%. Optical reflectivity on these highly porous V{sub 2}O{sub 5} surfaces show ∼0% optical reflectivity at 670 nm wavelength, which is very similar to that of “black metal”. Combined with the naturally high melting point of V{sub 2}O{sub 5}, this very low optical reflectivity suggests potential application in solar power concentration technology. Additionally, this top-down approach guarantees relatively good contact between the different crystallites and avoids electrical conductivity limitations (if required). Since V{sub 2}O{sub 5} is naturally a potential photocatalytic material, the resulting sub-micron-sized cube-shaped porous structures could be used in solar water splitting for hydrogen production in energy applications.

Global model analysis of negative ion generation in low-pressure inductively coupled hydrogen plasmas with bi-Maxwellian electron energy distributions

International Nuclear Information System (INIS)

Huh, Sung-Ryul; Kim, Nam-Kyun; Jung, Bong-Ki; Chung, Kyoung-Jae; Hwang, Yong-Seok; Kim, Gon-Ho

2015-01-01

A global model was developed to investigate the densities of negative ions and the other species in a low-pressure inductively coupled hydrogen plasma with a bi-Maxwellian electron energy distribution. Compared to a Maxwellian plasma, bi-Maxwellian plasmas have higher populations of low-energy electrons and highly vibrationally excited hydrogen molecules that are generated efficiently by high-energy electrons. This leads to a higher reaction rate of the dissociative electron attachment responsible for negative ion production. The model indicated that the bi-Maxwellian electron energy distribution at low pressures is favorable for the creation of negative ions. In addition, the electron temperature, electron density, and negative ion density calculated using the model were compared with the experimental data. In the low-pressure regime, the model results of the bi-Maxwellian electron energy distributions agreed well quantitatively with the experimental measurements, unlike those of the assumed Maxwellian electron energy distributions that had discrepancies

Radiation damage in urania crystals implanted with low-energy ions

Energy Technology Data Exchange (ETDEWEB)

Nguyen, Tien Hien, E-mail: tien-hien.nguyen@u-psud.fr [Centre de Sciences Nucléaires et de Sciences de la Matière (CSNSM – UMR 8609), CNRS-IN2P3-Université Paris-Sud, Bâtiments 104-108, 91405 Orsay Campus (France); Garrido, Frédérico; Debelle, Aurélien; Mylonas, Stamatis [Centre de Sciences Nucléaires et de Sciences de la Matière (CSNSM – UMR 8609), CNRS-IN2P3-Université Paris-Sud, Bâtiments 104-108, 91405 Orsay Campus (France); Nowicki, Lech [The Andrzej Soltan Institute for Nuclear Studies, Hoza 69, 00-681 Warsaw (Poland); Thomé, Lionel; Bourçois, Jérôme; Moeyaert, Jérémy [Centre de Sciences Nucléaires et de Sciences de la Matière (CSNSM – UMR 8609), CNRS-IN2P3-Université Paris-Sud, Bâtiments 104-108, 91405 Orsay Campus (France)

2014-05-01

Implantations with low-energy ions (470-keV Xe and 500-keV La with corresponding ion range Rp ∼ 85 nm and range straggling ΔRp ∼ 40 nm) have been performed to investigate both radiation and chemical effects due to the incorporation of different species in UO{sub 2} (urania) crystals. The presence of defects was monitored in situ after each implantation fluence step by the RBS/C technique. Channelling data were analysed afterwards by Monte-Carlo simulations with a model of defects involving (i) randomly displaced atoms (RDA) and (ii) distorted rows, i.e. bent channels (BC). While increasing the ion fluence, the accumulation of RDA leads to a steep increase of the defect fraction in the range from 4 to 7 dpa regardless of the nature of bombarding ions followed by a saturation plateau over a large dpa range. A clear difference of 6% in the yield of saturation plateaus between irradiation with Xe and La ions was observed. Conversely, the evolutions of the fraction of BC showed a similar regular increase with increasing ion fluence for both ions. Moreover, this increase is shifted to a larger fluence in comparison to the sharp increase step of RDA. This phenomenon indicates a continuous structural modification of UO{sub 2} crystals under irradiation unseen by the measurement of RDA.

Enhancement of optical absorption of Si (100) surfaces by low energy N+ ion beam irradiation

Science.gov (United States)

Bhowmik, Dipak; Karmakar, Prasanta

2018-05-01

The increase of optical absorption efficiency of Si (100) surface by 7 keV and 8 keV N+ ions bombardment has been reported here. A periodic ripple pattern on surface has been observed as well as silicon nitride is formed at the ion impact zones by these low energy N+ ion bombardment [P. Karmakar et al., J. Appl. Phys. 120, 025301 (2016)]. The light absorption efficiency increases due to the presence of silicon nitride compound as well as surface nanopatterns. The Atomic Force Microscopy (AFM) study shows the formation of periodic ripple pattern and increase of surface roughness with N+ ion energy. The enhancement of optical absorption by the ion bombarded Si, compared to the bare Si have been measured by UV - visible spectrophotometer.

High current density ion beam obtained by a transition to a highly focused state in extremely low-energy region

Energy Technology Data Exchange (ETDEWEB)

Hirano, Y., E-mail: y.hirano@aist.go.jp, E-mail: hirano.yoichi@phys.cst.nihon-u.ac.jp [Innovative Plasma Processing Group, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568 (Japan); College of Science and Technologies, Nihon University, Chiyodaku, Tokyo 101-0897 (Japan); Kiyama, S.; Koguchi, H. [Innovative Plasma Processing Group, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568 (Japan); Fujiwara, Y.; Sakakita, H. [Innovative Plasma Processing Group, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568 (Japan); Department of Engineering Mechanics and Energy, University of Tsukuba, Ibaraki 305-8577 (Japan)

2015-11-15

A high current density (≈3 mA/cm{sup 2}) hydrogen ion beam source operating in an extremely low-energy region (E{sub ib} ≈ 150–200 eV) has been realized by using a transition to a highly focused state, where the beam is extracted from the ion source chamber through three concave electrodes with nominal focal lengths of ≈350 mm. The transition occurs when the beam energy exceeds a threshold value between 145 and 170 eV. Low-level hysteresis is observed in the transition when E{sub ib} is being reduced. The radial profiles of the ion beam current density and the low temperature ion current density can be obtained separately using a Faraday cup with a grid in front. The measured profiles confirm that more than a half of the extracted beam ions reaches the target plate with a good focusing profile with a full width at half maximum of ≈3 cm. Estimation of the particle balances in beam ions, the slow ions, and the electrons indicates the possibility that the secondary electron emission from the target plate and electron impact ionization of hydrogen may play roles as particle sources in this extremely low-energy beam after the compensation of beam ion space charge.

Characterisation Of The Beam Plasma In High Current, Low Energy Ion Beams For Implanters

International Nuclear Information System (INIS)

Fiala, J.; Armour, D. G.; Berg, J. A. van der; Holmes, A. J. T.; Goldberg, R. D.; Collart, E. H. J.

2006-01-01

The effective transport of high current, positive ion beams at low energies in ion implanters requires the a high level of space charge compensation. The self-induced or forced introduction of electrons is known to result in the creation of a so-called beam plasma through which the beam propagates. Despite the ability of beams at energies above about 3-5 keV to create their own neutralising plasmas and the development of highly effective, plasma based neutralising systems for low energy beams, very little is known about the nature of beam plasmas and how their characteristics and capabilities depend on beam current, beam energy and beamline pressure. These issues have been addressed in a detailed scanning Langmuir probe study of the plasmas created in beams passing through the post-analysis section of a commercial, high current ion implanter. Combined with Faraday cup measurements of the rate of loss of beam current in the same region due to charge exchange and scattering collisions, the probe data have provided a valuable insight into the nature of the slow ion and electron production and loss processes. Two distinct electron energy distribution functions are observed with electron temperatures ≥ 25 V and around 1 eV. The fast electrons observed must be produced in their energetic state. By studying the properties of the beam plasma as a function of the beam and beamline parameters, information on the ways in which the plasma and the beam interact to reduce beam blow-up and retain a stable plasma has been obtained

Low-energy irradiation effects of gas cluster ion beams

International Nuclear Information System (INIS)

Houzumi, Shingo; Takeshima, Keigo; Mochiji, Kozo; Toyoda, Noriaki; Yamada, Isao

2007-01-01

A cluster-ion irradiation system with cluster-size selection has been developed to study the effects of the cluster size for surface processes using cluster ions. A permanent magnet with a magnetic field of 1.2 T is installed for size separation of large cluster ions. Trace formations at HOPG surface by the irradiation with size-selected Ar-cluster ions under acceleration energy of 30 keV were investigated by a scanning tunneling microscopy. Generation behavior of the crater-like traces is strongly affected by the number of constituent atoms (cluster size) of the irradiating cluster ion. When the incident cluster ion is composed of 100-3000 atoms, crater-like traces are observed on the irradiated surfaces. In contrast, such traces are not observed at all with the irradiation of the cluster-ions composed of over 5000 atoms. Such the behavior is discussed on the basis of the kinetic energy per constituent atom of the cluster ion. To study GCIB irradiation effects against macromolecule, GCIB was irradiated on DNA molecules absorbed on graphite surface. By the GCIB irradiation, much more DNA molecules was sputtered away as compared with the monomer-ion irradiation. (author)

Magnetized retarding field energy analyzer measuring the particle flux and ion energy distribution of both positive and negative ions

International Nuclear Information System (INIS)

Rafalskyi, Dmytro; Aanesland, Ane; Dudin, Stanislav

2015-01-01

This paper presents the development of a magnetized retarding field energy analyzer (MRFEA) used for positive and negative ion analysis. The two-stage analyzer combines a magnetic electron barrier and an electrostatic ion energy barrier allowing both positive and negative ions to be analyzed without the influence of electrons (co-extracted or created downstream). An optimal design of the MRFEA for ion-ion beams has been achieved by a comparative study of three different MRFEA configurations, and from this, scaling laws of an optimal magnetic field strength and topology have been deduced. The optimal design consists of a uniform magnetic field barrier created in a rectangular channel and an electrostatic barrier consisting of a single grid and a collector placed behind the magnetic field. The magnetic barrier alone provides an electron suppression ratio inside the analyzer of up to 6000, while keeping the ion energy resolution below 5 eV. The effective ion transparency combining the magnetic and electrostatic sections of the MRFEA is measured as a function of the ion energy. It is found that the ion transparency of the magnetic barrier increases almost linearly with increasing ion energy in the low-energy range (below 200 eV) and saturates at high ion energies. The ion transparency of the electrostatic section is almost constant and close to the optical transparency of the entrance grid. We show here that the MRFEA can provide both accurate ion flux and ion energy distribution measurements in various experimental setups with ion beams or plasmas run at low pressure and with ion energies above 10 eV

Influence of low energy N+ ions pre-treatment on damage effects of UV-B irradiation on M1 rice

International Nuclear Information System (INIS)

Zhao Shuaipeng; Huang Qunce; Chen Xueneng

2011-01-01

The seedlings of rice (xindao18) were exposed to UV-B (10.08 kJ/(m 2 ·d 1 )) irradiation following the pretreatment with three different implantation dosages of low-energy N + ions. Changes in the levels of the superoxide (POD), superoxide dismutase (SOD), catalase (CAT), malondialdehyde (MDA), glutathione (GSH) and soluble sugar were measured. The result showed that the UV-B irradiation on the seedlings of rice pretreated with low-energy ions implantation could lead to increase activities in POD and SOD, and the maximum appeared on the dose of 2.0 x 10 17 ions/cm 2 . Meanwhile, it made the content of GSH increased, and caused the activity of CAT and the content of MDA to be decreased. But there was no obvious change in soluble sugar. It was suggested that the rice pretreated by low energy ion implantation could enhance the antioxidation capacity and defensive ability when irradiated by UV-B, and the antioxidation system could be induced earlier than carbohydrate system. Therefore,the biological effects of UV-B irradiation on rice pretreated by low energy ion implantation were quite obvious. (authors)

Molecular dynamics study of the effect of substrate temperature and Ar ion assisted deposition on the deposition of amorphous TiO_2 films

International Nuclear Information System (INIS)

Chen, Xian; Zhang, Jing; Zhao, Yu-Qing

2017-01-01

Highlights: • The surface roughness of a-TiO_2 films is decreased with the increment of the Ar ion assisted energy. • The surface roughness of a-TiO_2 films is decreased with higher substrate temperature when the substrate has an island structure. • The assisted Ar ion has power of making a flat surface and increasing the local temperature. • The assisted Ar ion will influence the growth mode with the change of surface atom mobility. • The Volmer-Weber (island) growth mode is inhibited with a high assisted Ar ion energy. - Abstract: This paper has investigated the impact of the substrate temperature and Ar ion assisted deposition on the surface structure formation mechanism and the film properties during the amorphous TiO_2 thin film deposition process with the molecular dynamics simulation method. The results show that the reduction of the surface roughness happen when the energy of Ar ions assisted is increased or the substrate temperature rises, and also the film density on surface is changed with the increasing of Ar ions energy and substrate temperature. It is also found that the Volmer-Weber (island) growth mode of films is promoted by the lower Ar ion energy and higher substrate temperature when the substrate has an island structure. The assisted Ar ion has power of making a flat surface and increasing the local temperature. Besides, it will influence the growth mode with the change of surface atom mobility. With a high assisted Ar ion energy the Volmer-Weber (island) growth mode is inhibited, which will be conducive to the formation of more smooth film surface.

Nano-patterning of perpendicular magnetic recording media by low-energy implantation of chemically reactive ions

International Nuclear Information System (INIS)

Martin-Gonzalez, M.S.; Briones, F.; Garcia-Martin, J.M.; Montserrat, J.; Vila, L.; Faini, G.; Testa, A.M.; Fiorani, D.; Rohrmann, H.

2010-01-01

Magnetic nano-patterning of perpendicular hard disk media with perpendicular anisotropy, but preserving disk surface planarity, is presented here. Reactive ion implantation is used to locally modify the chemical composition (hence the magnetization and magnetic anisotropy) of the Co/Pd multilayer in irradiated areas. The procedure involves low energy, chemically reactive ion irradiation through a resist mask. Among N, P and As ions, P are shown to be most adequate to obtain optimum bit density and topography flatness for industrial Co/Pd multilayer media. The effect of this ion contributes to isolate perpendicular bits by destroying both anisotropy and magnetic exchange in the irradiated areas. Low ion fluences are effective due to the stabilization of atomic displacement levels by the chemical effect of covalent impurities.

The mass effect model of the survival rate's dose effect of organism irradiated with low energy ion beam

International Nuclear Information System (INIS)

Shao Chunlin; Gui Qifu; Yu Zengliang

1995-01-01

The main characteristic of the low energy ions mutation is its mass deposition effect. Basing on the theory of 'double strand breaking' and the 'mass deposition effect', the authors suggests that the mass deposition products can repair or further damage the double strand breaking of DNA. According to this consideration the dose effect model of the survival rate of organism irradiated by low energy of N + ion beam is deduced as: S exp{-p[αφ + βφ 2 -Rφ 2 exp(-kφ)-Lφ 3 exp(-kφ)]}, which can be called 'mass effect model'. In the low energy ion beam mutation, the dose effects of many survival rates that can not be imitated by previous models are successfully imitated by this model. The suitable application fields of the model are also discussed

Low energy ion scattering (LEIS) and the compositional and structural analysis of solid surfaces

International Nuclear Information System (INIS)

Berg, J.A. van den; Armour, D.G.

1981-01-01

The physics of Low Energy Ion Scattering (LEIS) and its application as a surface analytical technique are reviewed. It is shown that compositional and short-range structural information can be obtained by choosing experimental conditions which optimize the contributions of single and double (or multiple) collisions, respectively. The LEIS technique allows mass analysis in a straightforward way, possesses a high surface selectivity but is unable to provide quantitative information in isolation due to scattering cross-section uncertainties and not easily quantifiable charge exchange effects. Structural information regarding adsorbate positions on single crystal surfaces and the short-range substrate structure (including damaged and reconstructed surfaces) can be obtained by exploiting shadowing and/or multiple scattering phenomena. The progress made in recent years in this area is charted. It is shown that computer simulations often play an important role in this type of study. Effects, such as charge exchange, inelastic energy loss and ion beam surface perturbations, which complicate the use of low energy ion scattering for surface analysis are discussed in detail. The present status of the technique in the different areas of study is indicated. (author)

Influence of compaction and surface roughness on low-energy ion scattering signals

NARCIS (Netherlands)

Jansen, W.P.A.; Knoester, A.; Maas, A.J.H.; Schmit, P.; Kytökivi, A.; Denier van der Gon, A.W.; Brongersma, H.H.

2004-01-01

Investigation of the surface composition of powders often requires compaction. To study the effect of compaction on surface analysis, samples have been compacted at various pressures ranging from 0 Pa (i.e. no compaction) up to 2000 MPa (2 × 104 kg cm-2) Low-energy ion scattering (LEIS) was used to

Space charge compensation in the Linac4 low energy beam transport line with negative hydrogen ions

Energy Technology Data Exchange (ETDEWEB)

Valerio-Lizarraga, Cristhian A., E-mail: cristhian.alfonso.valerio.lizarraga@cern.ch [CERN, Geneva (Switzerland); Departamento de Investigación en Física, Universidad de Sonora, Hermosillo (Mexico); Lallement, Jean-Baptiste; Lettry, Jacques; Scrivens, Richard [CERN, Geneva (Switzerland); Leon-Monzon, Ildefonso [Facultad de Ciencias Fisico-Matematicas, Universidad Autónoma de Sinaloa, Culiacan (Mexico); Midttun, Øystein [CERN, Geneva (Switzerland); University of Oslo, Oslo (Norway)

2014-02-15

The space charge effect of low energy, unbunched ion beams can be compensated by the trapping of ions or electrons into the beam potential. This has been studied for the 45 keV negative hydrogen ion beam in the CERN Linac4 Low Energy Beam Transport using the package IBSimu [T. Kalvas et al., Rev. Sci. Instrum. 81, 02B703 (2010)], which allows the space charge calculation of the particle trajectories. The results of the beam simulations will be compared to emittance measurements of an H{sup −} beam at the CERN Linac4 3 MeV test stand, where the injection of hydrogen gas directly into the beam transport region has been used to modify the space charge compensation degree.

Molecular dynamics study of the effect of substrate temperature and Ar ion assisted deposition on the deposition of amorphous TiO{sub 2} films

Energy Technology Data Exchange (ETDEWEB)

Chen, Xian, E-mail: mus_c@qq.com [Science and Technology on Analog Integrated Circuit Laboratory, ChongQing, 401332 (China); Zhang, Jing [Science and Technology on Analog Integrated Circuit Laboratory, ChongQing, 401332 (China); Zhao, Yu-Qing [Key Laboratory for Physical Electronics and Devices of the Ministry of Education, Xi' an Jiaotong University, Xi’AN, 710049 (China)

2017-05-15

Highlights: • The surface roughness of a-TiO{sub 2} films is decreased with the increment of the Ar ion assisted energy. • The surface roughness of a-TiO{sub 2} films is decreased with higher substrate temperature when the substrate has an island structure. • The assisted Ar ion has power of making a flat surface and increasing the local temperature. • The assisted Ar ion will influence the growth mode with the change of surface atom mobility. • The Volmer-Weber (island) growth mode is inhibited with a high assisted Ar ion energy. - Abstract: This paper has investigated the impact of the substrate temperature and Ar ion assisted deposition on the surface structure formation mechanism and the film properties during the amorphous TiO{sub 2} thin film deposition process with the molecular dynamics simulation method. The results show that the reduction of the surface roughness happen when the energy of Ar ions assisted is increased or the substrate temperature rises, and also the film density on surface is changed with the increasing of Ar ions energy and substrate temperature. It is also found that the Volmer-Weber (island) growth mode of films is promoted by the lower Ar ion energy and higher substrate temperature when the substrate has an island structure. The assisted Ar ion has power of making a flat surface and increasing the local temperature. Besides, it will influence the growth mode with the change of surface atom mobility. With a high assisted Ar ion energy the Volmer-Weber (island) growth mode is inhibited, which will be conducive to the formation of more smooth film surface.

Development of high current low energy H+ ion source

International Nuclear Information System (INIS)

Forrester, A.T.; Crow, J.T.; Goebel, D.M.

1978-01-01

The ultimate goal of this work is the development of an ion source suitable for double charge exchange of D + ions to D - ions in cesium or other vapor. Since the fraction of the D + which changes to D - may be as high as 0.35 in the energy below one keV, the process appears very favorable. What is desired is a source of several hundred cm 2 area, with a D + current density greater than, say 0.2A/cm 2 . Small angular spread is essential with up to about 0.1 radian being acceptable. A simple approach to this problem appears to be through fine mesh extraction electrodes. In this system a single grid facing the ion source plasma constitutes the entire extraction electrode system. If the potential difference between the grid and the source plasma is large compared to the ion energy at the plasma boundary, then the distance s 0 is just the Child-Langmuir distance corresponding to the ion current density J and the potential difference V 0 between the plasma and the grid

Room temperature diamond-like carbon coatings produced by low energy ion implantation

Energy Technology Data Exchange (ETDEWEB)

Markwitz, A., E-mail: a.markwitz@gns.cri.nz [Department for Ion Beam Technologies, GNS Science, 30 Gracefield Road, Lower Hutt (New Zealand); The MacDiarmid Institute for Advanced Materials and Nanotechnology (New Zealand); Mohr, B.; Leveneur, J. [Department for Ion Beam Technologies, GNS Science, 30 Gracefield Road, Lower Hutt (New Zealand)

2014-07-15

Nanometre-smooth diamond-like carbon coatings (DLC) were produced at room temperature with ion implantation using 6 kV C{sub 3}H{sub y}{sup +} ion beams. Ion beam analysis measurements showed that the coatings contain no heavy Z impurities at the level of 100 ppm, have a homogeneous stoichiometry in depth and a hydrogen concentration of typically 25 at.%. High resolution TEM analysis showed high quality and atomically flat amorphous coatings on wafer silicon. Combined TEM and RBS analysis gave a coating density of 3.25 g cm{sup −3}. Raman spectroscopy was performed to probe for sp{sup 2}/sp{sup 3} bonds in the coatings. The results indicate that low energy ion implantation with 6 kV produces hydrogenated amorphous carbon coatings with a sp{sup 3} content of about 20%. Results highlight the opportunity of developing room temperature DLC coatings with ion beam technology for industrial applications.

The Breeding of a Pigment Mutant Strain of Steroid Hydroxylation Aspergillus Flavus by Low Energy Ion Implantation

International Nuclear Information System (INIS)

Ye Hui; Ma Jingming; Feng Chun; Cheng Ying; Zhu Suwen; Cheng Beijiu

2009-01-01

In the process of the fermentation of steroid C 11 α-hydroxylgenation strain Aspergillus flavus AF-ANo208, a red pigment is derived, which will affect the isolation and purification of the target product. Low energy ion beam implantation is a new tool for breeding excellent mutant strains. In this study, the ion beam implantation experiments were performed by infusing two different ions: argon ion (Ar + ) and nitrogen ion (N + ). The results showed that the optimal ion implantation was N + with an optimum dose of 2.08 x 10 15 ions/cm 2 , with which the mutant strain AF-ANm16 that produced no red pigment was obtained. The strain had high genetic stability and kept the strong capacity of C11α-hydroxylgenation, which could be utilized in industrial fermentation. The differences between the original strain and the mutant strain at a molecular level were analyzed by randomly amplified polymorphic DNA (RAPD). The results indicated that the frequency of variation was 7.00%, which would establish the basis of application investigation into the breeding of pigment mutant strains by low energy ion implantation. (ion beam bioengineering)

Effects of low-energy ion beam bombardment on metal oxides

International Nuclear Information System (INIS)

Sullivan, J.L.; Saied, S.O.; Choudhury, T.

1993-01-01

This paper describes a study of Ar ion bombardment damage in metal oxides. In the energy range 1 to 5 keV, preferential oxygen removal and reduction of the oxides was found to depend on ion current density, but to be independent of beam energy. (author)

Interaction of low-energy highly charged ions with matter; Wechselwirkung niederenergetischer hochgeladener Ionen mit Materie

Energy Technology Data Exchange (ETDEWEB)

Ginzel, Rainer

2010-06-09

The thesis presented herein deals with experimental studies of the interaction between highly charged ions and neutral matter at low collision energies. The energy range investigated is of great interest for the understanding of both charge exchange reactions between ions comprising the solar wind and various astrophysical gases, as well as the creation of near-surface nanostructures. Over the course of this thesis an experimental setup was constructed, capable of reducing the kinetic energy of incoming ions by two orders of magnitude and finally focussing the decelerated ion beam onto a solid or gaseous target. A coincidence method was employed for the simultaneous detection of photons emitted during the charge exchange process together with the corresponding projectile ions. In this manner, it was possible to separate reaction channels, whose superposition presumably propagated large uncertainties and systematic errors in previous measurements. This work has unveiled unexpectedly strong contributions of slow radiative decay channels and clear evidence of previously only postulated decay processes in charge exchange-induced X-ray spectra. (orig.)

Beam profile measurement with CR-39 track detector for low-energy ions

CERN Document Server

Sato, F; Tanaka, T; Iida, T; Yamauchi, T; Oda, K

1999-01-01

A CR-39 track detector was successfully used to measure the outline of thin low-energy ion beams. After the etching, the surface of the detector was examined with an observation system composed of a Normarski microscope, a CCD camera and a digital image processing computer. Beam images obtained with the system were in good agreement on the outline of the beam formed with a beam aperture. Also, the resolving power in the beam outline measurement was roughly explained from the consideration of the ion range and the etch-pit growth in the chemical etching for the CR-39 detector.

Use of low energy alkali ion scattering as a probe of surface structure

International Nuclear Information System (INIS)

Overbury, S.H.

1986-01-01

An overview is given of the use of low energy ion scattering as a probe of surface structure with emphasis on work done using alkali ions. Various schemes for extracting structural information from the ion energy and angle distributions are discussed in terms of advantages and disadvantages of each. The scattering potential which is the primary non-structural parameter needed for analysis, is discussed in terms of recent experimental results. The structure of clean and reconstructed surfaces are discussed, with examples of measurements of layer relaxations on the Mo(111) surface and missing row reconstructions on the Au(110) and Pt(110) surfaces. Studies of adsorbate covered surfaces are presented with respect to location of the adsorbate and its effect on the structure of the underlying substrate. Finally, examples are given which demonstrate the sensitivity of ion scattering to surface defects and disordering on reconstructed Au(110) and Pt(110) surfaces and unreconstructed Mo(111) surfaces, and to ordering of adsorbates on Mo(001). 47 refs., 12 figs

Development of a low-energy radioactive ion beam facility for the MARA separator

Energy Technology Data Exchange (ETDEWEB)

Papadakis, Philippos, E-mail: philippos.papadakis@jyu.fi; Moore, Iain; Pohjalainen, Ilkka; Sarén, Jan; Uusitalo, Juha [University of Jyväskylä, Department of Physics (Finland)

2016-12-15

A low-energy radioactive ion beam facility for the production and study of nuclei produced close to the proton drip line is under development at the Accelerator Laboratory of the University of Jyväskylä, Finland. The facility will take advantage of the mass selectivity of the recently commissioned MARA vacuum-mode mass separator. The ions selected by MARA will be stopped and thermalised in a small-volume gas cell prior to extraction and further mass separation. The gas cell design allows for resonance laser ionisation/spectroscopy both in-gas-cell and in-gas-jet. The facility will include experimental setups allowing ion counting, mass measurement and decay spectroscopy.

Operation of low-energy ion implanters for Si, N, C ion implantation into silicon and glassy carbon

International Nuclear Information System (INIS)

Carder, D.A.; Markwitz, A.

2009-01-01

This report details the operation of the low-energy ion implanters at GNS Science for C, N and Si implantations. Two implanters are presented, from a description of the components through to instructions for operation. Historically the implanters have been identified with the labels 'industrial' and 'experimental'. However, the machines only differ significantly in the species of ions available for implantation and sample temperature during implantation. Both machines have been custom designed for research purposes, with a wide range of ion species available for ion implantation and the ability to implant two ions into the same sample at the same time from two different ion sources. A fast sample transfer capability and homogenous scanning profiles are featured in both cases. Samples up to 13 mm 2 can be implanted, with the ability to implant at temperatures down to liquid nitrogen temperatures. The implanters have been used to implant 28 Si + , 14 N + and 12 C + into silicon and glassy carbon substrates. Rutherford backscattering spectroscopy has been used to analyse the implanted material. From the data a Si 30 C 61 N 9 layer was measured extending from the surface to a depth of about 77 ± 2 nm for (100) silicon implanted with 12 C + and 14 N + at multiple energies. Silicon and nitrogen ion implantation into glassy carbon produced a Si (40.5 %), C (38 %), N (19.5 %) and O (2%) layer centred around a depth of 50 ± 2 nm from the surface. (author). 8 refs., 20 figs

Formation of plasmid DNA strand breaks induced by low-energy ion beam: indication of nuclear stopping effects

International Nuclear Information System (INIS)

Chen Yu; Jiang Bingyao; Chen Youshan; Ding Xingzhao; Liu Xianghuai; Chen Ceshi; Guo Xinyou; Yin Guanglin

1998-01-01

Plasmid pGEM 3zf(+) was irradiated by nitrogen ion beam with energies between 20 and 100 keV and the fluence kept as 1 x 10 12 ions/cm 2 . The irradiated plasmid was assayed by neutral electrophoresis and quantified by densitometry. The yields of DNA with single-strand and double-strand breaks first increased then decreased with increasing ion energy. There was a maximal yield value in the range of 20-100 keV. The relationship between DNA double-strand breaks (DSB) cross-section and linear energy transfer (LET) also showed a peak-shaped distribution. To understand the physical process during DNA strand breaks, a Monte Carlo calculation code known as TRIM (Transport of Ions in Matter) was used to simulate energy losses due to nuclear stopping and to electronic stopping. It can be assumed that nuclear stopping plays a more important role in DNA strand breaks than electronic stopping in this energy range. The physical mechanisms of DNA strand breaks induced by a low-energy ion beam are also discussed. (orig.)

Composition variations of low energy heavy ions during large solar energetic particle events

Energy Technology Data Exchange (ETDEWEB)

Ho, George C., E-mail: George.Ho@jhuapl.edu; Mason, Glenn M., E-mail: Glenn.Mason@jhuapl.edu [Johns Hopkins University Applied Physics Laboratory, Laurel, MD 20723 (United States)

2016-03-25

The time-intensity profile of large solar energetic particle (SEP) event is well organized by solar longitude as observed at Earth orbit. This is mostly due to different magnetic connection to the shock that is associated with large SEP event propagates from the Sun to the heliosphere. Earlier studies have shown event averaged heavy ion abundance ratios can also vary as a function of solar longitude. It was found that the Fe/O ratio for high energy particle (>10 MeV/nucleon) is higher for those western magnetically well connected events compare to the eastern events as observed at L1 by the Advanced Composition Explorer (ACE) spacecraft. In this paper, we examined the low energy (∼1 MeV/nucleon) heavy ions in 110 isolated SEP events from 2009 to the end of 2014. In addition, the optical and radio signatures for all of our events are identified and when data are available we also located the associated coronal mass ejection (CME) data. Our survey shows a higher Fe/O ratio at events in the well-connected region, while there are no corrections between the event averaged elemental composition with the associated coronal mass ejection speed. This is inconsistent with the higher energy results, but inline with other recent low-energy measurements.

The gridless plasma ion source (GIS) for plasma ion assisted optical coating

International Nuclear Information System (INIS)

You Dawei; Li Xiaoqian; Wang Yu; Lin Yongchang

2004-01-01

High-quality optical coating is a key technology for modern optics. Ion-assisted deposition technology was used to improve the vaporized coating in 1980's. The GIS (gridless ion source), which is an advanced plasma source for producing a high-quality optical coating in large area, can produce a large area uniformity>1000 mm (diameter), a high ion current density ∼0.5 mA/cm 2 , 20 eV-200 eV energetic plasma ions and can activate reactive gas and film atoms. Now we have developed a GIS system. The GIS and the plasma ion-assisted deposition technology are investigated to achieve a high-quality optical coating. The GIS is a high power and high current source with a power of 1 kW-7.5 kW, a current of 10 A- 70 A and an ion density of 200 μA/cm 2 -500 μA/cm 2 . Because of the special magnetic structure, the plasma-ion extraction efficiency has been improved to obtain a maximum ion density of 500 μA/cm 2 in the medium power (∼4 kW) level. The GIS applied is of a special cathode structure, so that the GIS operation can be maintained under a rather low power and the lifetime of cathode will be extended. The GIS has been installed in the LPSX-1200 type box coating system. The coated TiO 2 , SiO 2 films such as antireflective films with the system have the same performance reported by Leybold Co, 1992, along with a controllable refractive index and film structure. (authors)

Survival probability in small angle scattering of low energy alkali ions from alkali covered metal surfaces

International Nuclear Information System (INIS)

Neskovic, N.; Ciric, D.; Perovic, B.

1982-01-01

The survival probability in small angle scattering of low energy alkali ions from alkali covered metal surfaces is considered. The model is based on the momentum approximation. The projectiles are K + ions and the target is the (001)Ni+K surface. The incident energy is 100 eV and the incident angle 5 0 . The interaction potential of the projectile and the target consists of the Born-Mayer, the dipole and the image charge potentials. The transition probability function corresponds to the resonant electron transition to the 4s projectile energy level. (orig.)

Low energy electron-initiated ion-molecule reactions of ribose analogues

International Nuclear Information System (INIS)

Mozejko, P.

2003-01-01

Recent experiments in which plasmid DNA samples were bombarded with low energy ( 2 O, DNA bases, and sugar-phosphate backbone analogues. To this end, the cyclic molecule tetrahydrofuran, and its derivatives, provide useful models for the sugar-like molecules contained in the backbone of DNA. In addition to LEE induced dissociation by processes such as dissociative electron attachment (DEA), molecules may be damaged by ions and neutral species of non-thermal energies created by LEE in the surrounding environment. In this contribution, we investigate with electron stimulated desorption techniques, LEE damage to films of desoxy-ribose analogues in the presence of various molecular coadsorbates, that simulate changes in local molecular environment. In one type of experiments tetrahydrofuran is deposited onto multilayer O2. A desorbed signal of OH - indicates ion-molecule reactions of the type O - + C 4 H 8 O -> OH - + C 4 H 7 O, where the O - was formed initially by DEA to O 2 . Further electron stimulated desorption measurements for tetrahydrofuran and derivatives adsorbed on H 2 O, Kr, N 2 O and CH 3 OH will be presented and discussed

A study of low-energy ion induced radiolysis of thiol-containing amino acid cysteine in the solid and aqueous solution states

Energy Technology Data Exchange (ETDEWEB)

Ke Zhigang [Key Laboratory of Ion Beam Bio-engineering, Institute of Plasma Physics of Chinese Academy of Sciences, 350 Shushanhu Road, P.O. Box 1126, Hefei 230031 (China); Huang Qing, E-mail: huangq@ipp.ac.c [Key Laboratory of Ion Beam Bio-engineering, Institute of Plasma Physics of Chinese Academy of Sciences, 350 Shushanhu Road, P.O. Box 1126, Hefei 230031 (China); Dang Bingrong [Institute of Modern Physics, Chinese Academy of Sciences, 509 Nanchang Road, Lanzhou 730000 (China); Lu Yilin [Key Laboratory of Ion Beam Bio-engineering, Institute of Plasma Physics of Chinese Academy of Sciences, 350 Shushanhu Road, P.O. Box 1126, Hefei 230031 (China); Department of Physics, Anhui University, Hefei 230031 (China); Yuan Hang; Zhang Shuqing; Yu Zengliang [Key Laboratory of Ion Beam Bio-engineering, Institute of Plasma Physics of Chinese Academy of Sciences, 350 Shushanhu Road, P.O. Box 1126, Hefei 230031 (China)

2010-09-15

The radiolysis of cysteine under plasma discharge and irradiation of low-energy ion beam was investigated. The damage of cysteine in aqueous solution under discharge was assessed via the acid ninhydrin reagent and the yield of cystine produced from the reaction was analyzed by FTIR. In addition, the generation of hydrogen sulfide was also identified. The destruction of solid cysteine under low-energy ion beam irradiation was estimated via monitoring IR bands of different functional groups (-SH, -NH{sub 3}, -COO{sup -}) of cysteine, and the production of cystine from ion-irradiated solid cysteine after dissolution in water was also verified. These results may help us to understand the inactivation of sulphydryl enzymes under direct and indirect interaction with the low-energy ion irradiation.

Multiphonon-assisted anti-Stokes and Stokes fluorescence of triply ionized rare-earth ions

International Nuclear Information System (INIS)

Auzel, F.

1976-01-01

Experimental demonstration of multiphonon-assisted anti-Stokes and Stokes excitation of rare-earth ions (R 3+ ) in different hosts, that is, in a weak-coupling ion-lattice interaction case, is obtained. An exponential behavior of excitation probabilities with respect to energy difference between excitation and electronic line is found just as for multiphonon-assisted nonradiative decay and energy transfer. Exponential parameters α/sub As/ and α/sub S/ for anti-Stokes and Stokes excitation are measured and linked to the Miyakawa-Dexter α parameter for decay, leading to estimates for Pekar-Huang-Rhys coupling parameter S 0 of about 0.04, in agreement with values obtained from one-phonon spectra or nonradiative-decay measurements. A semiempirical formula is deduced to obtain α from only one parameter, an effective phonon energy

On the neutralization of noble gas ions in low energy ion scattering

International Nuclear Information System (INIS)

Draxler, M.

2003-04-01

The set-up ACOLISSA has been set to operation. It was thoroughly tested and found to completely fulfill the requirements for the measurement of charge integrated and of ion TOF-LEIS spectra. Charge integrated scattering spectra in LEIS exhibit a surface peak in many experimental conditions. It was shown that the appearance of this peak is due to a reduced energy width of the contribution from the surface layer and partly due to a reduced energy loss in the surface layer as compared to deeper layers. In the regime of strong multiple scattering, both reasons reflect the fact, that scattering from surface atoms occurs practically exclusively by single binary collisions, while plural and multiple scattering set in in the subsurface layers. As a consequence, only the surface layer and to some extent also the second layer will contribute to the surface peak. Experiment as well as simulation show this behavior, so that other possible reasons for the appearance of a surface peak (e.g. channeling) can safely be ruled out. At high energies, when the multiple scattering half width angle is small, surface effects are mainly caused by electronic stopping and become small, as observed in both, experiment and simulation. In this regime, the energy spectrum is well described by the single scattering spectrum. From the present thesis one can draw the following conclusions concerning the neutralization of noble gas ions at metal surfaces: below the threshold for collision induced processes (CIN, CIR) Ε Εth), P+ is governed by local processes (collision induced neutralization and collision induced reionization) and by a non-local process (Auger neutralization), and thus depends on the energy as well as on vperp. From experiments like the one presented here, where the ion energy as well as the scattering geometry are varied, the process parameters of the neutralization can uniquely be determined for any system. These findings are generally valid and reveal the relevance of different

Low stored energy 100 kV regulator for ion sources at LANSCE

International Nuclear Information System (INIS)

Jacobson, E.G.; Haffner, R.L.; Ingalls, W.B.; Meyer, B.J.; Stelzer, J.E.

1998-01-01

To minimize accelerating column damage caused by uncontrolled energy release during arc-downs, it is desirable to minimize the available stored electrical energy. For the Los Alamos Neutron Science Center (LANSCE) H - ion sources, the stored energy includes, in addition to the charge in the power supply output capacitance, the charge on the electronics racks. They are supported and insulated from ground by PVC pipe and have a capacitance to ground of approximately 900 pf. In 1988 (LANSCE) personnel designed a high-voltage current source using a low-stored-energy power supply and planar triode with the goal of eliminating uncontrolled release of charge stored in the power supply. Construction and testing were performed intermittently as resources permitted until 1993. When work on the Short Pulse Spallation Source (SPSS) started on the LANSCE Ion Source Test Stand (ISTS) it was recognized that a higher current power supply would be needed and work resumed on the regulator circuitry. A 120 kV power supply having low output capacitance, and a planar triode have been used to supply 40 mA, 120 Hz, 12% duty-factor current for the ISTS beam. The triode's cathode current is controlled by circuitry operating both at power-supply voltage level and at ground level via a fiber optic link. Voltage droop is approximately 600 V during the 1 ms beam pulse. The authors present the status of the regulator and its special challenges

A new computer code for quantitative analysis of low-energy ion scattering data

NARCIS (Netherlands)

Dorenbos, G; Breeman, M; Boerma, D.O

We have developed a computer program for the full analysis of low-energy ion scattering (LEIS) data, i.e. an analysis that is equivalent to the full calculation of the three-dimensional trajectories of beam particles through a number of layers in the solid, and ending in the detector. A dedicated

Electrostatic interaction between Interball-2 and the ambient plasma. 2. Influence on the low energy ion measurements with Hyperboloid

Directory of Open Access Journals (Sweden)

M. Hamelin

2002-03-01

Full Text Available The measurement of the thermal ion distributions in space is always strongly influenced by the ion motion through the complex 3D electrostatic potential structure built around a charged spacecraft. In this work, we study the related aberrations of the ion distribution detected on board, with special application to the case of the Hyperboloid instrument borne by the Interball-2 auroral satellite. Most of the time, the Interball-2 high altitude auroral satellite is charged at some non-negligible positive potential with respect to the ambient plasma, as shown in part 1; in consequence, the measurement of magnetospheric low energy ions (< 80 eV with the Hyperboloid instrument can be disturbed by the complex electric potential environment of the satellite. In the case of positive charging, as in previous experiments, a negative bias is applied to the Hyperboloid structure in order to reduce this effect and to keep as much as possible the opportunity to detect very low energy ions. Then, the ions reaching the Hyperboloid entrance windows would have travelled across a continuous huge electrostatic lens involving various spatial scales from ~ 10 cm (detector radius to ~ 10 m (satellite antennas. Neglecting space charge effects, we have computed the ion trajectories that are able to reach the Hyperboloid windows within their acceptance angles. There are three main results: (i for given values of the satellite potential, and for each direction of arrival (each window, we deduced the related energy cutoff; (ii we found that all ions in the energy channel, including the cutoff, can come from a large range of directions in the unperturbed plasma, especially when the solar panels or antennas act as electrostatic mirrors; (iii for higher energy channels, the disturbances are reduced to small angular shifts. Biasing of the aperture is not very effective with the Hyperboloid instrument (as on previous missions with instruments installed close to the spacecraft

Structural and composition investigations at delayered locations of low k integrated circuit device by gas-assisted focused ion beam

Energy Technology Data Exchange (ETDEWEB)

Wang, Dandan, E-mail: dandan.wang@globalfoundries.com; Kee Tan, Pik; Yamin Huang, Maggie; Lam, Jeffrey; Mai, Zhihong [Technology Development Department, GLOBALFOUNDRIES Singapore Pte. Ltd., 60 Woodlands Industrial Park D, Street 2, Singapore 738406 (Singapore)

2014-05-15

The authors report a new delayering technique – gas-assisted focused ion beam (FIB) method and its effects on the top layer materials of integrated circuit (IC) device. It demonstrates a highly efficient failure analysis with investigations on the precise location. After removing the dielectric layers under the bombardment of an ion beam, the chemical composition of the top layer was altered with the reduced oxygen content. Further energy-dispersive x-ray spectroscopy and Fourier transform infrared analysis revealed that the oxygen reduction lead to appreciable silicon suboxide formation. Our findings with structural and composition alteration of dielectric layer after FIB delayering open up a new insight avenue for the failure analysis in IC devices.

Status of the SNS H- ion source and low-energy beam transport system

International Nuclear Information System (INIS)

Keller, R.; Thomae, R.; Stockli, M.; Welton, R.

2002-01-01

The ion source and Low-Energy Transport (LEBT) system that will provide H - ion beams to the Spallation Neutron Source (SNS) Front End and the accelerator chain have been developed into a mature unit that will satisfy the operational needs through the commissioning and early operating phases of SNS. The ion source was derived from the SSC ion source, and many of its original features have been improved to achieve reliable operation at 6% duty factor, producing beam currents in the 35-mA range and above. The LEBT utilizes purely electrostatic focusing and includes static beam-steering elements and a pre-chopper. This paper will discuss the latest design features of the ion source and LEBT, give performance data for the integrated system, and report on relevant commissioning results obtained with the SNS RFQ accelerator. Perspectives for further improvements will be outlined in concluding remarks

Ion-beam doping of GaAs with low-energy (100 eV) C + using combined ion-beam and molecular-beam epitaxy

Science.gov (United States)

Iida, Tsutomu; Makita, Yunosuke; Kimura, Shinji; Winter, Stefan; Yamada, Akimasa; Fons, Paul; Uekusa, Shin-ichiro

1995-01-01

A combined ion-beam and molecular-beam-epitaxy (CIBMBE) system has been developed. This system consists of an ion implanter capable of producing ions in the energy range of 30 eV-30 keV and conventional solid-source MBE. As a successful application of CIBMBE, low-energy (100 eV) carbon ion (C+) irradiation during MBE growth of GaAs was carried out at substrate temperatures Tg between 500 and 590 °C. C+-doped layers were characterized by low-temperature (2 K) photoluminescence (PL), Raman scattering, and van der Pauw measurements. PL spectra of undoped GaAs grown by CIBMBE revealed that unintentional impurity incorporation into the epilayer is extremely small and precise doping effects are observable. CAs acceptor-related emissions such as ``g,'' [g-g], and [g-g]β are observed and their spectra are significantly changed with increasing C+ beam current density Ic. PL measurements showed that C atoms were efficiently incorporated during MBE growth by CIBMBE and were optically well activated as an acceptor in the as-grown condition even for Tg as low as 500 °C. Raman measurement showed negligible lattice damage of the epilayer bombarded with 100 eV C+ with no subsequent heat treatment. These results indicate that contamination- and damage-free impurity doping without postgrowth annealing can be achieved by the CIBMBE method.

Ion-beam doping of GaAs with low-energy (100 eV) C(+) using combined ion-beam and molecular-beam epitaxy

Science.gov (United States)

Lida, Tsutomu; Makita, Yunosuke; Kimura, Shinji; Winter, Stefan; Yamada, Akimasa; Fons, Paul; Uekusa, Shin-Ichiro

1995-01-01

A combined ion-beam and molecular-beam-epitaxy (CIBMBE) system has been developed. This system consists of an ion implanter capable of producing ions in the energy range of 30 eV - 30 keV and conventional solid-source MBE. As a successful application of CIBMBE, low-energy (100 eV) carbon ion (C(+)) irradiation during MBE growth of GaAs was carried out at substrate temperatures T(sub g) between 500 and 590 C. C(+)-doped layers were characterized by low-temperature (2 K) photoluminescence (PL), Raman scattering, and van der Pauw measurements. PL spectra of undoped GaAs grown by CIBMBE revealed that unintentional impurity incorporation into the epilayer is extremely small and precise doping effects are observable. C(sub As) acceptor-related emissions such as 'g', (g-g), and (g-g)(sub beta) are observed and their spectra are significantly changed with increasing C(+) beam current density I(sub c). PL measurements showed that C atoms were efficiently incorporated during MBE growth by CIBMBE and were optically well activated as an acceptor in the as-grown condition even for T(sub g) as low as 500 C. Raman measurement showed negligible lattice damage of the epilayer bombarded with 100 eV C(+) with no subsequent heat treatment. These results indicate that contamination- and damage-free impurity doping without postgrowth annealing can be achieved by the CIBMBE method.

Low-energy radioactive ion beam production of 22Mg

International Nuclear Information System (INIS)

Duy, N.N.; Kubono, S.; Yamaguchi, H.; Kahl, D.; Wakabayashi, Y.; Teranishi, T.; Iwasa, N.; Kwon, Y.K.; Khiem, L.H.; Kim, Y.H.; Song, J.S.; Hu, J.; Ayyad, Y.

2013-01-01

The 22 Mg nucleus plays an important role in nuclear astrophysics, specially in the 22 Mg(α,p) 25 Al and proton capture 22 Mg(p,γ) 23 Al reactions. It is believed that 22 Mg is a waiting point in the αp-process of nucleosynthesis in novae. We proposed a direct measurement of the 22 Mg+α resonance reaction in inverse kinematics using a radioactive ion (RI) beam. A 22 Mg beam of 3.73 MeV/u was produced at CRIB (Center for Nuclear Study (CNS) low-energy RI Beam) facility of the University of Tokyo located at RIKEN (Japan) in 2011. In this paper we present the results about the production of the 22 Mg beam used for the direct measurement of the scattering reaction 22 Mg(α,α) 22 Mg, and the stellar reaction 22 Mg(α,p) 25 Al in the energy region concerning an astrophysical temperature of T 9 =1–3 GK

Defect diffusion during annealing of low-energy ion-implanted silicon

International Nuclear Information System (INIS)

Bedrossian, P.J.; Caturla, M.J.; Diaz de la Rubia, T.

1997-01-01

The authors present a new approach for investigating the kinetics of defect migration during annealing of low-energy, ion-implanted silicon, employing a combination of computer simulations and atomic-resolution tunneling microscopy. Using atomically-clean Si(111)-7 x 7 as a sink for bulk point defects created by 5 keV Xe and Ar irradiation, they observe distinct, temperature-dependent surface arrival rates for vacancies and interstitials. A combination of simulation tools provides a detailed description of the processes that underlie the observed temperature-dependence of defect segregation, and the predictions of the simulations agree closely with the experimental observations

Development of industrial ion implantation and ion assisted coating processes: A perspective

International Nuclear Information System (INIS)

Legg, K.O.; Solnick-Legg, H.

1989-01-01

Ion beam processes have gone through a series of developmental stages, from being the mainstay of the semiconductor industry for production of integrated circuits, to new commercial processes for biomedical, aerospace and other industries. Although research is still continuing on surface modification using ion beam methods, ion implantation and ion assisted coatings for treatment of metals, ceramics, polymers and composites must now be considered viable industrial processes of benefit in a wide variety of applications. However, ion implantation methods face various barriers to acceptability, in terms not only of other surface treatment processes, but for implantation itself. This paper will discuss some of the challenges faced by a small company whose primary business is development and marketing of ion implantation and ion-assisted coating processes. (orig.)

Doppler-shift assisted fast ion spectroscopy: a case study for X-ray emission from 277 MeV/u Pb[81+] ions

International Nuclear Information System (INIS)

Mokler, P.H.; Stoehlker, T.; Kozhuharov, C.; Moshammer, R.; Rymuza, P.; Stachura, Z.; Warczak, A.

1994-09-01

Utilizing the different information from spatially separated segments of high-granular photon detectors the measured (LAB) energy of photons emitted by fast moving ions can be corrected individually for the Doppler effect according to the particular observation angles of each detector segment. By a redundant fitting procedure the center of mass photon energy can be determined with high precision. This new Doppler-shift assisted spectroscopy is explained for the case study of 277.4 MeV/u Pb 82+ ions colliding with a N 2 -gas target at the heavy ion storage ring ESR. Spectroscopic information for hydrogenic Pb 81+ ions is given for the ground-state transitions, for the Balmer transitions, as well as for the total K-binding energy. (orig.)

Ion induced fragmentation of biomolecular systems at low collision energies

International Nuclear Information System (INIS)

Bernigaud, V; Adoui, L; Chesnel, J Y; Rangama, J; Huber, B A; Manil, B; Alvarado, F; Bari, S; Hoekstra, R; Postma, J; Schlathoelter, T

2009-01-01

In this paper, we present results of different collision experiments between multiply charged ions at low collision energies (in the keV-region) and biomolecular systems. This kind of interaction allows to remove electrons form the biomolecule without transferring a large amount of vibrational excitation energy. Nevertheless, following the ionization of the target, fragmentation of biomolecular species may occur. It is the main objective of this work to study the physical processes involved in the dissociation of highly electronically excited systems. In order to elucidate the intrinsic properties of certain biomolecules (porphyrins and amino acids) we have performed experiments in the gas phase with isolated systems. The obtained results demonstrate the high stability of porphyrins after electron removal. Furthermore, a dependence of the fragmentation pattern produced by multiply charged ions on the isomeric structure of the alanine molecule has been shown. By considering the presence of other surrounding biomolecules (clusters of nucleobases), a strong influence of the environment of the biomolecule on the fragmentation channels and their modification, has been clearly proven. This result is explained, in the thymine and uracil case, by the formation of hydrogen bonds between O and H atoms, which is known to favor planar cluster geometries.

Low energy ion scattering as a tool for surface structure and composition analysis

International Nuclear Information System (INIS)

Armour, D.G.

1980-01-01

Low energy ion scattering is finding increasing application in the study of areas such as gas adsorption, thin film deposition and surface damage creation and annealing during ion irradiation where structural and compositional changes occurring in only the outermost atomic layer need to be monitored. The capabilities of the technique and the ways in which it has been developed for different types of analysis depend strongly on the fundamental atomic collision processes taking place at the surface and it is these processes, together with examples of their role in analysis applications, that form the subject of this paper. (author)

A simulation study of interface mixing during ion-assisted deposition

International Nuclear Information System (INIS)

Wenzhi Li; Fuzhai Cui; Yi Liao; Hengde Li

1990-01-01

Ion-beam assisted deposition (IAD) can produce strong film to substrate adhesion. The adhesion depends heavily on atom mixing near the interface. In order to study the dependence of the width of the mixed interface on the experimental parameters, a Monte Carlo study has been made using the dynamic simulation code TCIS-6. The simulation mode and calculational procedure are described. Simulation calculations indicate that the mixing increases with the bombarding energies and a saturation width appears at high energies. There is a strong relationship between the amount of mixing and the ion-to-atom arrival ratio. Some comparisons of the calculations with experimental data in the literature are also presented. (author)

Structural and mechanical properties of hydroxyapatite coatings formed by ion-beam assisted deposition

Science.gov (United States)

Zykova, A.; Safonov, V.; Dudin, S.; Yakovin, S.; Donkov, N.; Ghaemi, M. H.; Szkodo, M.; Antoszkiewicz, M.; Szyfelbain, M.; Czaban, A.

2018-03-01

The ion-beam assisted deposition (IBAD) is an advanced method capable of producing crystalline coatings at low temperatures. We determined the characteristics of hydroxyapatite Ca10(PO4)6(OH)2 target and coatings formed by IBAD using X-ray photoemission spectroscopy (XPS), X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM) and energy dispersive X-ray (EDX). The composition of the coatings’ cross-section and surface was close to those of the target. The XPS spectra showed that the binding energy values of Ca (2p1/2, 2p3/2), P (2p3/2), and O 1s levels are related to the hydroxyapatite phase. The coatings demonstrate an optimal H/E ratio, and a good resistance to scratch tests.

Formation of nanostructures on HOPG surface in presence of surfactant atom during low energy ion irradiation

Energy Technology Data Exchange (ETDEWEB)

Ranjan, M., E-mail: ranjanm@ipr.res.in; Joshi, P.; Mukherjee, S.

2016-07-15

Low energy ions beam often develop periodic patterns on surfaces under normal or off-normal incidence. Formation of such periodic patterns depends on the substrate material, the ion beam parameters, and the processing conditions. Processing conditions introduce unwanted contaminant atoms, which also play strong role in pattern formation by changing the effective sputtering yield of the material. In this work we have analysed the effect of Cu, Fe and Al impurities introduced during low energy Ar{sup +} ion irradiation on HOPG substrate. It is observed that by changing the species of foreign atoms the surface topography changes drastically. The observed surface topography is co-related with the modified sputtering yield of HOPG. Presence of Cu and Fe amplify the effective sputtering yield of HOPG, so that the required threshold for the pattern formation is achieved with the given fluence, whereas Al does not lead to any significant change in the effective yield and hence no pattern formation occurs.

Transport of energetic ions by low-n magnetic perturbations

International Nuclear Information System (INIS)

Mynick, H.E.

1992-10-01

The stochastic transport of MeV ions induced by low-n magnetic perturbations is studied, focussing chiefly on the stochastic mechanism operative for passing particles in low frequency perturbations. Beginning with a single-harmonic form for the perturbing field, it iii first shown numerically and analytically that the stochastic threshold of energetic particles can be much lower than that of the magnetic field, contrary to earlier expectations, so that MHD perturbations could cause appreciable loss of energetic ions without destroying the bulk confinement. The analytic theory is then extended in a number of directions, to darity the relation of the present stochaistic mechanism to instances already found, to allow for more complex perturbations, and to consider the more general relationship between the stochasticity of magnetic fields, and that of particles of differing energies (and pitch angles) moving in those fields. It is shown that the stochastic threshold is in general a nonmonotonic function of energy, whose form can to some extent be tailored to achieve desired goals (e.g., burn control or ash removal) by a judicious choice of the perturbation. Illustrative perturbations are exhibited which are stochastic for low but not for high-energy ions, for high but not for low-energy ions, and for intermediate-energy ions, but not for low or high energy. The second possibility is the behavior needed for burn control; the third provides a possible mechanism for ash removal

Importance of ion energy on SEU in CMOS SRAMs

Energy Technology Data Exchange (ETDEWEB)

Dodd, P.E.; Shaneyfelt, M.R.; Sexton, F.W.; Hash, G.L.; Winokur, P.S. [Sandia National Labs., Albuquerque, NM (United States); Musseau, O.; Leray, J.L. [CEA-DAM, Bruyeres-le-Chatel (France)

1998-03-01

The single-event upset (SEU) responses of 16 Kbit to 1 Mbit SRAMs irradiated with low and high-energy heavy ions are reported. Standard low-energy heavy ion tests appear to be sufficiently conservative for technologies down to 0.5 {micro}m.

Low-energy ion beam synthesis of Ag endotaxial nanostructures in silicon

Science.gov (United States)

Nagarajappa, Kiran; Guha, Puspendu; Thirumurugan, Arun; Satyam, Parlapalli V.; Bhatta, Umananda M.

2018-06-01

Coherently, embedded metal nanostructures (endotaxial) are known to have potential applications concerning the areas of plasmonics, optoelectronics and thermoelectronics. Incorporating appropriate concentrations of metal atoms into crystalline silicon is critical for these applications. Therefore, choosing proper dose of low-energy ions, instead of depositing thin film as a source of metal atoms, helps in avoiding surplus concentration of metal atoms that diffuses into the silicon crystal. In this work, 30 keV silver negative ions are implanted into a SiO x /Si(100) at two different fluences: 1 × 1015 and 2.5 × 1015 Ag- ions/cm2. Later, the samples are annealed at 700 °C for 1 h in Ar atmosphere. Embedded silver nanostructures have been characterized using planar and cross-sectional TEM (XTEM) analysis. Planar TEM analysis shows the formation of mostly rectangular silver nanostructures following the fourfold symmetry of the substrate. XTEM analysis confirms the formation of prism-shaped silver nanostructures embedded inside crystalline silicon. Endotaxial nature of the embedded crystals has been discussed using selected area electron diffraction analysis.

Use of thulium-sensitized rare earth-doped low phonon energy crystalline hosts for IR sources.

Science.gov (United States)

Ganem, Joseph; Bowman, Steven R

2013-11-01

Crystalline hosts with low phonon energies enable novel energy transfer processes when doped with rare earth ions. Two applications of energy transfer for rare earth ions in thulium-sensitized low phonon energy crystals that result in infrared luminescence are discussed. One application is an endothermic, phonon-assisted cross-relaxation process in thulium-doped yttrium chloride that converts lattice phonons to infrared emission, which raises the possibility of a fundamentally new method for achieving solid-state optical cooling. The other application is an optically pumped mid-IR phosphor using thulium-praseodymium-doped potassium lead chloride that converts 805-nm diode light to broadband emission from 4,000 to 5,500 nm. These two applications in chloride crystals are discussed in terms of critical radii calculated from Forster-Dexter energy transfer theory. It is found that the critical radii for electric dipole-dipole interactions in low phonon energy chloride crystals are comparable to those in conventional oxide and fluoride crystals. It is the reduction in multi-phonon relaxation rates in chloride crystals that enable these additional energy transfer processes and infrared luminescence.

Low-energy ion bombardment to tailor the interfacial and mechanical properties of polycrystalline 3C-silicon carbide

International Nuclear Information System (INIS)

Liu Fang; Li, Carolina H.; Pisano, Albert P.; Carraro, Carlo; Maboudian, Roya

2010-01-01

Low-energy Ar + ion bombardment of polycrystalline 3C-silicon carbide (poly-SiC) films is found to be a promising surface modification method to tailor the mechanical and interfacial properties of poly-SiC. The film average stress decreases as the ion energy and the bombardment time increase. Furthermore, this treatment is found to change the strain gradient of the films from positive to negative values. The observed changes in stress and strain gradient are explained by ion peening and thermal spikes models. In addition, the poly-SiC films show a significant enhancement in corrosion resistance by this treatment, which is attributed to a reduction in surface energy and to an increase in the compressive stress in the near-surface region.

Ion scattering spectroscopy studies of zirconium dioxide thin films prepared in situ

International Nuclear Information System (INIS)

Martin, P.J.; Netterfield, R.P.

1987-01-01

Low energy Ion Scattering Spectroscopy has been used to investigate, in situ, thin films of zirconium dioxide deposited by evaporation and ion-assisted deposition. It is shown that when a film is deposited to an average thickness of 0.3 nm +- 0.03, as measured by in situ ellipsometry, complete coverage of the substrate occurs. 'Ion-assisted films have detectably higher Zr surface concentrations and reduced low-energy sputter peaks. Inelastic tailing effects in the Zr scattering peak for 2 keV 4 He + are found to come from particles scattered from approximately the first 7 nm of the oxide surface. The influence of primary ion energy on the Zr/O ratio is also examined. (author)

Lens effect of unipolar electrostatic steerers on low-energy ion beams and its effective reduction

International Nuclear Information System (INIS)

Asozu, Takuhiro; Matsuda, Makoto; Kutsukake, Kenichi

2010-08-01

The JAEA-Tokai tandem accelerator has two ion injectors, one is the negative ion injector placed on the ground and the other is the positive ion injector in the high voltage terminal. The electrostatic steerers in the high voltage terminal are used for ion beams from the both injectors. Because the beams from the negative ion injector gain high energy at the 20MV terminal, the electrodes of the electrostatic steerers are designed to be supplied several ten kV. The high voltages are supplied by two unipolar DC power supplies and they are controlled as the sum of the voltages keeps constant. The high electric potential between the electrodes affects the beam trajectory as an electrostatic lens. The potential must be too high for the low energy ion beams from the positive ion injector on the 100kV deck. We simulated the beam trajectory by calculation and evaluated the strength of the lens effects. The results showed that the focal distances were too short to control the beam form positive ion injector using optical devices in the downstream. If we reduce the voltages to one tenth in simulation, then the focusing effects were much less significant. We installed a multiplying factor circuit to make the voltages variable and much lower. The results of beam-handling tests using the circuit actually showed significant increase of the ion beam current. (author)

Surface damage studies of ETFE polymer bombarded with low energy Si ions (≤100 keV)

International Nuclear Information System (INIS)

Minamisawa, Renato Amaral; Almeida, Adelaide De; Budak, Satilmis; Abidzina, Volha; Ila, Daryush

2007-01-01

Surface studies of ethylenetetrafluoroethylene (ETFE), bombarded with Si in a high-energy tandem Pelletron accelerator, have recently been reported. Si ion bombardment with a few MeV to a few hundred keV energies was shown to be sufficient to produce damage on ETFE film. We report here the use of a low energy implanter with Si ion energies lower than 100 keV, to induce changes on ETFE films. In order to determine the radiation damage, ETFE bombarded films were simulated with SRIM software and analyzed with optical absorption photometry (OAP), Raman and Fourier transform infrared-attenuated total reflectance (FTIR-ATR) spectroscopy to show quantitatively the physical and chemical property changes. Carbonization occurs following higher dose implantation, and hydroperoxides were formed following dehydroflorination of the polymer

The temperature effect of low-energy ion beam implantation on seed

International Nuclear Information System (INIS)

Chang Shenghe; Su Mingjie; Qin Guangyong; Wu Yuping; Zhao Haizhen

2005-01-01

The temperature effects of low-energy ion beam implantation on the seed germination were studied. Maize dry seeds were covered with copy paper, aluminum foil and without cover, respectively. Results showed that the germination rate of the seeds covered with paper which was the bad heat transmitter was the highest among three treatments, while that covered with aluminum foil which can transmit heat energy well was the least. The germination rate of the seeds covered with nothing was the second. Temperature affected seeds germination markedly. Generally the temperature of the target room inhibited the seeds' germination. After minus the effects of the temperature in the target room, the germination rates of the seeds were modified in this paper. The modified germination rate curve was also provided. (authors)

Monte carlo simulation of penetration range distribution of ion beam with low energy implanted in plant seeds

International Nuclear Information System (INIS)

Huang Xuchu; Hou Juan; Liu Xiaoyong

2009-01-01

The depth and density distribution of V + ion beam implanted into peanut seed is simulated by the Monte Carlo method. The action of ions implanted in plant seeds is studied by the classical collision theory of two objects, the electronic energy loss is calculated by Lindhard-Scharff formulation. The result indicates that the depth of 200keV V + implanted into peanut seed is 5.57μm, which agrees with experimental results, and the model is appropriate to describe this interaction. This paper provides a computational method for the depth and density distribution of ions with low energy implanted in plant seeds. (authors)

Determination of lattice orientation in aluminium alloy grains by low energy gallium ion-channelling

Energy Technology Data Exchange (ETDEWEB)

Silk, Jonathan R. [Aerospace Metal Composites Ltd., RAE Road, Farnborough, GU14 6XE (United Kingdom); Dashwood, Richard J. [WMG, University of Warwick, Coventry, CV4 7AL (United Kingdom); Chater, Richard J., E-mail: r.chater@imperial.ac.u [Department of Materials, Imperial College, London SW7 2AZ (United Kingdom)

2010-06-15

Polished sections of a fine-grained aluminium, silicon carbide metal matrix composite (MMC) alloy were prepared by sputtering using a low energy gallium ion source and column (FIB). The MMC had been processed by high temperature extrusion. Images of the polished surface were recorded using the ion-induced secondary electron emission. The metal matrix grains were distinguished by gallium ion-channelling contrast from the silicon carbide component. The variation of the contrast from the aluminium grains with tilt angle can be recorded and used to determine lattice orientation with the contrast from the silicon carbide (SiC) component as a reference. This method is rapid and suits site-specific investigations where classical methods of sample preparation fail.

Nanocrystals manufacturing by ultra-low-energy ion-beam-synthesis for non-volatile memory applications

Energy Technology Data Exchange (ETDEWEB)

Normand, P. E-mail: p.normand@imel.demokritos.gr; Kapetanakis, E.; Dimitrakis, P.; Skarlatos, D.; Beltsios, K.; Tsoukalas, D.; Bonafos, C.; Ben Assayag, G.; Cherkashin, N.; Claverie, A.; Berg, J.A. van den; Soncini, V.; Agarwal, A.; Ameen, M.; Perego, M.; Fanciulli, M

2004-02-01

An overview of recent developments regarding the fabrication and structure of thin silicon dioxide films with embedded nanocrystals through ultra-low-energy ion-beam-synthesis (ULE-IBS) is presented. Advances in fabrication, increased understanding of structure formation processes and ways to control them allow for the fabrication of reproducible and attractive silicon-nanocrystal memory devices for a wide-range of memory applications as herein demonstrated in the case of low-voltage EEPROM-like applications.

Nanocrystals manufacturing by ultra-low-energy ion-beam-synthesis for non-volatile memory applications

International Nuclear Information System (INIS)

Normand, P.; Kapetanakis, E.; Dimitrakis, P.; Skarlatos, D.; Beltsios, K.; Tsoukalas, D.; Bonafos, C.; Ben Assayag, G.; Cherkashin, N.; Claverie, A.; Berg, J.A. van den; Soncini, V.; Agarwal, A.; Ameen, M.; Perego, M.; Fanciulli, M.

2004-01-01

An overview of recent developments regarding the fabrication and structure of thin silicon dioxide films with embedded nanocrystals through ultra-low-energy ion-beam-synthesis (ULE-IBS) is presented. Advances in fabrication, increased understanding of structure formation processes and ways to control them allow for the fabrication of reproducible and attractive silicon-nanocrystal memory devices for a wide-range of memory applications as herein demonstrated in the case of low-voltage EEPROM-like applications

Parameters affecting profile shape of a high energy low current thin ion beam. Vol. 2

Energy Technology Data Exchange (ETDEWEB)

Abdel Salam, F W; Moustafa, O A; El-Khabeary, H [Accelerators Department, Nuclear Research Center, Atomic Energy Authority, Cairo, (Egypt)

1996-03-01

The shape of the profile of a high energy, low current beam of finite length has beam investigated. The beam profile shape depends on the initial beam radius, beam perveance, atomic mass number, charge state of ions, and beam length. These parameters can affect the relation between the initial beam radius and the corresponding final one. An optimum initial beam radius corresponding to minimum final beam at the target has been formulated and the relation between them is deduced taking account of the space charge effect. The minimum beam radius at the target was found to be equal to 2.3 of the optimum initial radius. It is concluded that in order to obtain a small beam radius at a target placed at a finite distance from an ion source, a beam of a low perveance, low atomic mass number and high number of electronic charge is required. This is an important detection for micro machining applications using the oscillating electron ion source which produces nearly paraxial thin beam of low perveance. 12 figs.

Low energy RBS-channeling measurement system with the use of a time-of-flight scattered ion detector

Energy Technology Data Exchange (ETDEWEB)

Hasegawa, Masataka; Kobayashi, Naoto; Hayashi, Nobuyuki [Electrotechnical Lab., Tsukuba, Ibaraki (Japan)

1996-07-01

We have developed a low energy Rutherford backscattering spectrometry-ion channeling measurement system for the analysis of thin films and solid surfaces with the use of several tens keV hydrogen ions and a time-of-flight particle energy spectrometer. For the detection of the scattered ions new TOF spectrometer has been developed, which consists of two micro-channel-plate detectors. The pulsing of the primary ion beam is not necessary for this type of TOF measurement, and it is possible to observe continues scattered ion beams. The dimension of whole system is very compact compared to the conventional RBS-channeling measurement system with the use of MeV He ions. The energy resolution, {delta} E/E, for 25 keV H{sup +} was 4.1%, which corresponds to the depth resolution of 4.8 nm for silicon. The depth resolution of our system is better than that of conventional RBS system with MeV helium ions and solid state detectors. We have demonstrated the ion channeling measurement by this system with 25 keV hydrogen ions. The system can be available well to the analysis of thin films and solid surfaces with the use of the ion channeling effect. The observation of the reaction between Fe and hydrogen terminated silicon surface was also demonstrated. (J.P.N.)

Interaction of atomic and low-energy deuterium with tungsten pre-irradiated with self-ions

International Nuclear Information System (INIS)

Ogorodnikova, O. V.; Markelj, S.; Toussaint, U. von

2016-01-01

Polycrystalline tungsten (W) specimens were pre-irradiated with self-ions to create identical samples with high density of defects up to ∼2.5 μm near the surface. Then, W specimens were exposed to either thermal atomic deuterium (D) beam with an incident energy of ∼0.2 eV or low energy D plasma with the incident energy varied between 5 and 200 eV at different sample temperatures. Each sample was exposed once at certain temperature and fluence. The D migration and accumulation in W were studied post-mortem by nuclear reaction method. It was shown that the rate of the D to occupy radiation-induced defects increases with increasing the incident energy, ion flux, and temperature. Experimental investigation was accompanied by modelling using the rate-equation model. Moreover, the analytical model was developed and benchmarked against numerical model. The calculations of the deuterium diffusion with trapping at radiation-induced defects in tungsten by analytical model are consistent with numerical calculations using rate-equation model. The data of reflection and penetration of atomic and low-energy D were taking from calculations using molecular dynamics (MD) with Juslin interatomic potentials and a binary collision code TRIM. MD calculations show an agreement with a binary collision code TRIM only in a very narrow range of deuterium energies between 1 and 20 eV. Incorporation of the data of reflection and penetration of deuterium in the macroscopic modelling has been done to verify the range of validity of calculations using MD and binary collision code TRIM by comparison of modelling results with experimental data. Modelling results are consistent with experiments using reflection and penetration data of D obtained from TRIM code for incident ion energy above 1 eV. Otherwise, the parameters obtained from MD should be incorporated in the rate-equation model to have a good agreement with the experiments

A research of possibility for negative muon production by a low energy electron beam accompanying ion beam

International Nuclear Information System (INIS)

Uramoto, Joshin.

1993-12-01

A low energy electron beam (≤ 2000 eV) is injected perpendicularly to a uniform magnetic field, together with a low energy positive ion beam. On this magnetic mass analysis (using the uniform magnetic field), a peak of secondary electron current to the beam collector (arranging as a mass analyzer of 90deg type), appears at an analyzing magnetic field which corresponds exactly to a relation of negative muon μ - (the mass m=207 m e and the charge q=e, where m e and e are mass and charge of electron). The ion beam is essential for the peak appearance, which is produced by decelerating electrically the electron beam in front of the entrance slit of the mass analyzer, and by introducing a neutral gas into the electron beam region and producing a plasma through the ionization. We consider that a very small amount of negative muons may be produced through local cyclotron motions of the injected beam electrons in the ion beam or by an interaction between the bunched beam electrons and beam ions. (author)

Effects of irradiation with low-energy nitrogen ion injection on root tip cells of broad bean

International Nuclear Information System (INIS)

Huang Yaqin; Li Jinzhe; Huang Qunce

2012-01-01

In order to study the cytogenetic effects of low-energy nitrogen ion irradiation, broad bean seed embryo was irradiated by different doses of nitrogen ions. Micronucleus rate, mitotic index and chromosome aberration in root-tip cells were analyzed. The results showed that the injection of ions inhibited mitosis of root tip cells, interfered the normal process of mitosis, caused aberrations of chromosome structure, behavior and number. The frequency of micronucleus and chromosomal aberrations increased with the increasing radiation dosage, while mitotic index decreased. (authors)

Films deposited from reactive sputtering of aluminum acetylacetonate under low energy ion bombardment

Energy Technology Data Exchange (ETDEWEB)

Battaglin, Felipe Augusto Darriba; Prado, Eduardo Silva; Cruz, Nilson Cristino da; Rangel, Elidiane Cipriano, E-mail: elidiane@sorocaba.unesp.br [Universidade Estadual Paulista Julio de Mesquita Filho (UNESP), Sorocaba, SP (Brazil). Lab. de Plasmas Tecnologicos; Caseli, Luciano [Universidade Federal de Sao Paulo (UNIFESP), Diadema, SP (Brazil). Instituto de Ciencias Ambientais, Quimicas e Farmaceuticas; Silva, Tiago Fiorini da; Tabacniks, Manfredo Harri [Universidade de Sao Paulo (USP), SP (Brazil). Instituto de Fisica

2017-07-15

Films were deposited from aluminum acetylacetonate (Al(acac)3 ) using a methodology involving reactive sputtering and low energy ion bombardment. The plasma was generated by the application of radiofrequency power to the powder containing electrode and simultaneously, negative pulses were supplied to the electrode where the substrates were attached. It was investigated the effect of the duty cycle of the pulses (Δ) on the properties of the coatings. Association of ion bombardment to the deposition process increased film thickness, structure reticulation and organic content. Ions from the deposition environment were implanted at the film-air interface or underneath it. Morphology and topography were altered depending on Δ. Considering the enhancement of Δ, it affected the flux of ions reaching the depositing interface and then the deposition rate, H content, crosslinking degree and surface microstructure. Alumina groups were detected in the infrared spectra, whereas the precipitation of amorphous alumina was confirmed by X-ray diffraction. (author)

Systematic investigations of low energy Ar ion beam sputtering of Si and Ag

Energy Technology Data Exchange (ETDEWEB)

Feder, R., E-mail: rene.feder@iom-leipzig.de [Leibniz-Institut für Oberflächenmodifizierung, Permoserstraße 15, 04318 Leipzig (Germany); Frost, F.; Neumann, H.; Bundesmann, C.; Rauschenbach, B. [Leibniz-Institut für Oberflächenmodifizierung, Permoserstraße 15, 04318 Leipzig (Germany)

2013-12-15

Ion beam sputter deposition (IBD) delivers some intrinsic features influencing the growing film properties, because ion properties and geometrical process conditions generate different energy and spatial distributions of the sputtered and scattered particles. Even though IBD has been used for decades, the full capabilities are not investigated systematically and specifically used yet. Therefore, a systematic and comprehensive analysis of the correlation between the properties of the ion beam, the generated secondary particles and backscattered ions and the deposited films needs to be done. A vacuum deposition chamber has been set up which allows ion beam sputtering of different targets under variation of geometrical parameters (ion incidence angle, position of substrates and analytics in respect to the target) and of ion beam parameters (ion species, ion energy) to perform a systematic and comprehensive analysis of the correlation between the properties of the ion beam, the properties of the sputtered and scattered particles, and the properties of the deposited films. A set of samples was prepared and characterized with respect to selected film properties, such as thickness and surface topography. The experiments indicate a systematic influence of the deposition parameters on the film properties as hypothesized before. Because of this influence, the energy distribution of secondary particles was measured using an energy-selective mass spectrometer. Among others, experiments revealed a high-energetic maximum for backscattered primary ions, which shifts with increasing emission angle to higher energies. Experimental data are compared with Monte Carlo simulations done with the well-known Transport and Range of Ions in Matter, Sputtering version (TRIM.SP) code [J.P. Biersack, W. Eckstein, Appl. Phys. A: Mater. Sci. Process. 34 (1984) 73]. The thicknesses of the films are in good agreement with those calculated from simulated particle fluxes. For the positions of the

Design of a compact Faraday cup for low energy, low intensity ion beams

Energy Technology Data Exchange (ETDEWEB)

Cantero, E.D., E-mail: esteban.cantero@cern.ch [CERN, 1211 Geneva 23 (Switzerland); Sosa, A. [CERN, 1211 Geneva 23 (Switzerland); The University of Liverpool, Liverpool (United Kingdom); Andreazza, W.; Bravin, E.; Lanaia, D.; Voulot, D. [CERN, 1211 Geneva 23 (Switzerland); Welsch, C.P. [The University of Liverpool, Liverpool (United Kingdom); The Cockcroft Institute, Sci-Tech Daresbury, Daresbury, Warrington (United Kingdom)

2016-01-21

Beam intensity is one of the key parameters in particle accelerators, in particular during machine commissioning, but also during operation for experiments. At low beam energies and low intensities a number of challenges arise in its measurement as commonly used non-invasive devices are no longer sensitive enough. It then becomes necessary to stop the beam in order to measure its absolute intensity. A very compact Faraday cup for determining ion beam currents from a few nanoamperes down to picoamperes for the HIE-ISOLDE post-accelerator at CERN has been designed, built and tested with beam. It has a large aperture diameter of 30 mm and a total length of only 16 mm, making it one of the most compact designs ever used. In this paper we present the different steps that were involved in the design and optimization of this device, including beam tests with two early prototypes and the final monitor. We also present an analysis of the losses caused by secondary particle emission for different repelling electrode voltages and beam energies. Finally, we show that results obtained from an analytical model for electron loss probability combined with Monte Carlo simulations of particles trajectories provide a very good agreement with experimental data.

Ion-Assisted Pulsed Laser Deposition of amorphous tetrahedral-coordinated carbon films

Science.gov (United States)

Friedmann, T. A.; Tallant, D. R.; Sullivan, J. P.; Siegal, M. P.; Simpson, R. L.

1994-04-01

A parametric study has been performed of amorphous tetrahedral carbon (a-tC) films produced by ion-assisted pulsed laser deposition (IAPLD). The ion voltage, current density, and feed gas composition (nitrogen in argon) have been varied. The resultant films were characterized by thickness, residual stress, Raman spectroscopy, and electrical resistivity. The Raman spectra have been fit to two gaussian peaks, the so called graphitic (G) peak and the disorder (D) peak. It has been found that the magnitude of the D peak and the residual compressive stress are inversely correlated. At low beam voltages and currents, the magnitude of the D peak is low, increasing as the ion beam voltage and current are raised. The ion beam voltage has the most dramatic effect on the magnitude of the D peak. At low voltages (200-500 V) the magnitude of the D peak is greater for ion beams with high percentages of nitrogen possibly indicative of C-N bonding in the films. At higher voltages (500-1500 V) the D peak intensity is less sensitive to the nitrogen content of the beam.

Independent control of ion current and ion impact energy onto electrodes in dual frequency plasma devices

International Nuclear Information System (INIS)

Boyle, P C; Ellingboe, A R; Turner, M M

2004-01-01

Dual frequency capacitive discharges are designed to offer independent control of the flux and energy of ions impacting on an object immersed in a plasma. This is desirable in applications such as the processing of silicon wafers for microelectronics manufacturing. In such discharges, a low frequency component couples predominantly to the ions, while a high frequency component couples predominantly to electrons. Thus, the low frequency component controls the ion energy, while the high frequency component controls the plasma density. Clearly, this desired behaviour is not achieved for arbitrary configurations of the discharge, and in general one expects some unwanted coupling of ion flux and energy. In this paper we use computer simulations with the particle-in-cell method to show that the most important governing parameter is the ratio of the driving frequencies. If the ratio of the high and low frequencies is great enough, essentially independent control of the ion energy and flux is possible by manipulation of the high and low frequency power sources. Other operating parameters, such as pressure, discharge geometry, and absolute power, are of much less significance

Development of a pepper-pot emittance meter for diagnostics of low-energy multiply charged heavy ion beams extracted from an ECR ion source

Energy Technology Data Exchange (ETDEWEB)

Nagatomo, T., E-mail: nagatomo@riken.jp; Kase, M.; Kamigaito, O.; Nakagawa, T. [Nishina Center for Accelerator Based Science, RIKEN, Wako, Saitama 351-0198 (Japan); Tzoganis, V. [Nishina Center for Accelerator Based Science, RIKEN, Wako, Saitama 351-0198 (Japan); Cockcroft Institute, Daresbury, Warrington WA4 4AD (United Kingdom); Department of Physics, University of Liverpool, Liverpool, Merseyside L69 3BX (United Kingdom)

2016-02-15

Several fluorescent materials were tested for use in the imaging screen of a pepper-pot emittance meter that is suitable for investigating the beam dynamics of multiply charged heavy ions extracted from an ECR ion source. SiO{sub 2} (quartz), KBr, Eu-doped CaF{sub 2}, and Tl-doped CsI crystals were first irradiated with 6.52-keV protons to determine the effects of radiation damage on their fluorescence emission properties. For such a low-energy proton beam, only the quartz was found to be a suitable fluorescent material, since the other materials suffered a decay in fluorescence intensity with irradiation time. Subsequently, quartz was irradiated with heavy {sup 12}C{sup 4+}, {sup 16}O{sup 4+}, and {sup 40}Ar{sup 11+} ions, but it was found that the fluorescence intensity decreased too rapidly to measure the emittance of these heavy-ion beams. These results suggest that a different energy loss mechanism occurs for heavier ions and for protons.

Effect of energy selection on quantitative analysis in secondary ion microanalysis

International Nuclear Information System (INIS)

Steele, I.M.; Solberg, T.N.; Smith, J.V.; Clayton, R.N.; Hutcheon, I.D.

1977-01-01

Systematic change of voltage on the components of the secondary ion (SI) extraction system of our AEI-IM20 ion microprobe produced major changes of relative intensities of secondary ions passing through the mass spectrometer. The repeller, which bends the SI beam through about 60 0 , has the greatest effect, and can be used to plot the energy distribution. The extractor and the deflecting and focusing components have smaller but significant effects. Because low-energy secondary ions have a near-symmetrical distribution, whereas high-energy ones have an assymetric distribution favoring high energies, tuning of the acceptance band to higher energy reduces interference from low-energy ions, which tend to be unwanted molecular ions, at the expense of reduced transmission. Tuning to lower energy increases interference but gives higher transmission. The former condition is desirable for instruments restricted to low mass resolution, whereas both conditions are valuable for instruments adjustable for both high and low mass resolution. Other important factors are (a) sensitivity to surface irregularities which perturb SI energy collection, and (b) change in derived 'temperatures' from thermodynamic sputtering models merely from tuning the energy acceptance band. Careful attention to the above factors yielded reproducible SI ratios for the binary series of plagioclase feldspars. (Auth.)

Stress in ion-beam assisted silicon dioxide and tantalum pentoxide thin films

International Nuclear Information System (INIS)

Sirotkina, Natalia

2003-01-01

Ta 2 O 5 and SiO 2 thin films, deposited at room temperature by ion-beam sputtering (IBS) and dual ion-beam sputtering (DIBS), and SiO 2 films, deposited by reactive e-beam evaporation and ion-assisted deposition, were studied. The energy (150-600 eV) and ion-to-atom arrival ratio (0.27-2.0) of assisting argon and oxygen ions were varied. Influence of deposition conditions (deposition system geometry, nature and amount of gas in the chamber, substrate cleaning and ion-assistance parameters) on films properties (stress, composition, refractive index n 500nm and extinction coefficient k 500nm ) was investigated. A scanning method, based on substrate curvature measurements by laser reflection and stress calculation using the Stoney equation, was employed. RBS showed that stoichiometric Ta 2 O 5 films contain impurities of Ar, Fe and Mo. Stoichiometric SiO 2 films also contain Ta impurity. Argon content increases with ion bombardment and, at maximum incorporation, argon bubbles are registered by TEM. XPS studies are complicated by surface contaminations and preferential sputtering. Evaporated SiO 2 films show +100 MPa stress (+ is tensile, - compressive). With 300 eV Ar + bombardment, stress changes to -200 MPa, n 500nm decreases (1.56-1.49) and k 500nm increases (1.4x10 -4 - 1.8x10 -3 ). Of all studied IBS conditions, stress in SiO 2 (-560 MPa) and Ta 2 O 5 (-350 MPa) films depends only on sputtering gas species and oxygen entry point into the chamber. With argon and oxygen bombardment stress in IBS SiO 2 films decreases to -380 MPa and below the stress measurement system resolution, respectively. While Ar + bombardment of Ta 2 O 5 films leads to increase in stress to -490 MPa, the effect of oxygen assistance depends on ion energy. The observed behaviour was related to the total recoil density. In DIBS SiO 2 and Ta 2 O 5 films n 500nm varies in the region of 1.5-1.59 and 2.13-2.20 and k 500nm is below 5.5x10 -3 and 8.5x10 -3 , respectively. The refractive index

Effect of low energy electron irradiation on DNA damage by Cu{sup 2+} ion

Energy Technology Data Exchange (ETDEWEB)

Noh, Hyung Ah; Cho, Hyuck [Dept. of Physics, Chungnam National University, Daejeon (Korea, Republic of); Park, Yeun Soo [Plasma Technology Research Center, National Fusion Research Institute, Gunsan (Korea, Republic of)

2017-03-15

The combined effect of the low energy electron (LEE) irradiation and Cu{sup 2+} ion on DNA damage was investigated. Lyophilized pBR322 plasmid DNA films with various concentrations (1–15 mM) of Cu{sup 2+} ion were independently irradiated by monochromatic LEEs with 5 eV. The types of DNA damage, single strand break (SSB) and double strand break (DSB), were separated and quantified by gel electrophoresis. Without electron irradiation, DNA damage was slightly increased with increasing Cu ion concentration via Fenton reaction. LEE-induced DNA damage, with no Cu ion, was only 6.6% via dissociative electron attachment (DEA) process. However, DNA damage was significantly increased through the combined effect of LEE-irradiation and Cu ion, except around 9 mM Cu ion. The possible pathways of DNA damage for each of these different cases were suggested. The combined effect of LEE-irradiation and Cu ion is likely to cause increasing dissociation after elevated transient negative ion state, resulting in the enhanced DNA damage. For the decrease of DNA damage at around 9-mM Cu ion, it is assumed to be related to the structural stabilization due to DNA inter- and intra-crosslinks via Cu ion.

P.I.A.F.E project: long distance transport of low energy exotic ions

International Nuclear Information System (INIS)

Nibart, V.

1996-01-01

The aim of the PIAFE project is the long distance (400 m) transport of a low energy radioactive ion beam from the ILL (Institut Laue Langevin) to the ISN (Institut des Sciences Nucleaires) of Grenoble (France). The production, extraction, ionization and mass separation of ions is performed by the ILL, while the transformation of ions into multicharged ions, their stripping and acceleration is carried out at the ISN. Theoretical and experimental studies for a simple an original guidance solution have shown that such a long transport, even delicate, should not encounter any major difficulty. The main objectives of this thesis is the technical realization of a 18 m section of this transport line. The problem of supports and focalizing elements alignment has been solved together with the other problems such as: the central trajectory deviation due to alignment defects and to the Earth's magnetic field; the particle losses due to charge exchange with the residual gas and the emittance increase by Coulomb scattering. It has been demonstrated that a 90% transmission can be obtained using a 25 keV energy and a 10 -7 mbar vacuum. Experimental measurements using a rubidium ion source have allowed to validate a theoretical model of emittance increase due to the residual gas-ions interactions. The increase of emittance with respect to the pressure has been measured using four residual gases of different mass. (J.S.). 29 refs., 61 figs., 19 tabs., 8 photos., 4 appends

Albedo of low-energy light ions: case of anisotropic approximation of the collision integral

International Nuclear Information System (INIS)

Simovic, R.; Vukanic, J. . E-mail address of corresponding author: simovicr@vin.bg.ac.yu; Simovic, R.)

2005-01-01

For diffusion and slowing-down of low-energy light ions, the linear transport equation in the path length form was rederived taking into account a common anisotropic approximation of the collision integral. Assuming that the transport cross section depends only on the ion initial energy, the equation was Laplace-transformed over the relative path length and half-space albedo problem was considered by using the ordinary DPN technique. The Laplace-transformed reflection function was found in the lowest order of DPN flux approximation, and then was inverted analytically leading to the distribution of backscattered particles in the relative path-length. For the general power potential V(R)∞R -1/m the particle reflection coefficient was obtained as a series, while for the special case of the inverse square potential (m=1/2) this coefficient was determined in a compact form. The present approach was compared with the TRIM simulations of helium ion reflection, as well as with the Tilinin - Betz fitting formula and the MARLOWE simulations of proton reflection. (author)

Low-Energy Charge Transfer in Multiply-Charged Ion-Atom Collisions Studied with the Combined SCVB-MOCC Approach

Directory of Open Access Journals (Sweden)

B. Zygelman

2002-03-01

Full Text Available A survey of theoretical studies of charge transfer involving collisions of multiply-charged ions with atomic neutrals (H and He is presented. The calculations utilized the quantum-mechanical molecular-orbital close-coupling (MOCC approach where the requisite potential curves and coupling matrix elements have been obtained with the spin-coupled valence bond (SCVB method. Comparison is made among various collision partners, for equicharged systems, where it is illustrated that even for total charge transfer cross sections, scaling-laws do not exist for low-energy collisions (i.e. < 1 keV/amu. While various empirical scaling-laws are well known in the intermediateand high-energy regimes, the multi-electron configurations of the projectile ions results in a rich and varied low-energy dependence, requiring an explicit calculation for each collision-partner pair. Future charge transfer problems to be addressed with the combined SCVB-MOCC approach are briefly discussed.

Space-qualified optical thin films by ion-beam-assisted deposition

International Nuclear Information System (INIS)

Hsiao, C.N.; Chen, H.P.; Chiu, P.K.; Lin, Y.W.; Chen, F.Z.; Tsai, D.P.

2013-01-01

Optical interference coatings designed for use in a space-grade multispectral assembly in a complementary metal-oxide‐semiconductor sensor were deposited on glass by ion-beam-assisted deposition for a Cassegrain-type space-based remote-sensing platform. The patterned multispectral assembly containing blue, green, red, near infrared, and panchromatic multilayer high/low alternated dielectric band-pass filter arrays in a single chip was fabricated by a mechanical mask and the photolithography process. The corresponding properties of the films were investigated by in situ optical monitoring and spectrometry. It was found that the optical properties were significantly improved by employing ion-beam-assisted deposition. The average transmittances were above 88% for the multispectral assembly, with a rejection transmittance of less than 1% in the spectral range 350–1100 nm. To estimate the optical stability of optical coatings for aerospace applications, a space environment assuming a satellite orbiting the Earth at an altitude of near 800 km was simulated by a Co 60 gamma (γ) radiation test. - Highlights: ►Parameters of optical filters were optimized by using admittance loci analysis. ►Higher index of refraction of films prepared by ion beam assisted deposition. ►The dielectric filters have acceptable resistance after γ radiation exposure

Rechargeable dual-metal-ion batteries for advanced energy storage.

Science.gov (United States)

Yao, Hu-Rong; You, Ya; Yin, Ya-Xia; Wan, Li-Jun; Guo, Yu-Guo

2016-04-14

Energy storage devices are more important today than any time before in human history due to the increasing demand for clean and sustainable energy. Rechargeable batteries are emerging as the most efficient energy storage technology for a wide range of portable devices, grids and electronic vehicles. Future generations of batteries are required to have high gravimetric and volumetric energy, high power density, low price, long cycle life, high safety and low self-discharge properties. However, it is quite challenging to achieve the above properties simultaneously in state-of-the-art single metal ion batteries (e.g. Li-ion batteries, Na-ion batteries and Mg-ion batteries). In this contribution, hybrid-ion batteries in which various metal ions simultaneously engage to store energy are shown to provide a new perspective towards advanced energy storage: by connecting the respective advantages of different metal ion batteries they have recently attracted widespread attention due to their novel performances. The properties of hybrid-ion batteries are not simply the superposition of the performances of single ion batteries. To enable a distinct description, we only focus on dual-metal-ion batteries in this article, for which the design and the benefits are briefly discussed. We enumerate some new results about dual-metal-ion batteries and demonstrate the mechanism for improving performance based on knowledge from the literature and experiments. Although the search for hybrid-ion batteries is still at an early age, we believe that this strategy would be an excellent choice for breaking the inherent disadvantages of single ion batteries in the near future.

Impact of Low-Energy Ion Beam Implantation on the Expression of Ty1-copia-like Retrotransposons in Wheat (Triticum aestivum)

International Nuclear Information System (INIS)

Ya Huiyuan; Jiao Zhen; Gu Yunhong; Wang Weidong; Qin Guangyong; Huo Yuping

2007-01-01

Retrotransposon-like elements are major constituents of most eukaryotic genomes. For example, they account for roughly 90% of the wheat (Triticum aestivum) genome. Previous study on a wheat strain treated by low-energy N + ions indicated the variations in AFLP (Amplified Fragment Length Polymorphism ) markers. One such variation was caused by the re-activation of Ty1-copia-like retrotransposons, implying that the mutagenic effects of low-energy ions might work through elevated activation of retrotransposons. In this paper an expression profile of Ty1-copia-like retrotransposons in wheat treated by low-energy N + ions is reported. The reverse transcriptase (RT) domains of these retrotransposons were amplified by reverse-transcriptional polymerase chain reaction (RT-PCR) and sequentially cloned. 42 and 65 clones were obtained from the treated (CL) and control materials (CK), respectively. Sequence analysis of each clone was performed by software. Phylogeny and classification were calculated responding to the sequences of the RT domains. All the results show that there is much difference in the RT domain between the control sample and the treated sample. Especially, the RT domains from the treated group encode significantly more functional ORF (open reading frames) than those from the control sample. This observation suggests that the treated sample has higher activation of retrotransposons, possibly as a consequence of low-energy ion beam irradiation. It also suggests that retrotransposons in the two groups impact the host gene expression in two different ways and carry out different functions in wheat cells

Treatment of PVC using an alternative low energy ion bombardment procedure

Science.gov (United States)

Rangel, Elidiane C.; dos Santos, Nazir M.; Bortoleto, José Roberto R.; Durrant, Steven F.; Schreiner, Wido H.; Honda, Roberto Y.; Rangel, Rita de Cássia C.; Cruz, Nilson C.

2011-12-01

In many applications, polymers have progressively substituted traditional materials such as ceramics, glasses, and metals. Nevertheless, the use of polymeric materials is still limited by their surface properties. Frequently, selective modifications are necessary to suit the surface to a given application. Amongst the most common treatments, plasma immersion ion implantation (PIII) has attracted the attention of many researchers owing to its versatility and practicality. This method, however, requires a power supply to provide high voltage (tens of kV) negative pulses, with a controlled duty cycle, width and frequency. Owing to this, the implementation of PIII on the industrial scale can become economically inviable. In this work, an alternative plasma treatment that enables low energy ion bombardment without the need of a high voltage pulse generator is presented. To evaluate the efficiency of the treatment of polymers, polyvinylchloride, PVC, specimens were exposed to 5 Pa argon plasmas for 3600 s, at excitation powers, P, of between 10 and 125 W. Through contact angle and atomic force microscopy data, the influence of P on the wettability, surface free energy and roughness of the samples was studied. Surface chemical composition was measured by X-ray photoelectron spectroscopy, XPS. To evaluate the effect of aging under atmospheric conditions, contact angle and XPS measurements were performed one and 1334 days after the treatment. The plasma potential and ion density around the driven electrode were determined from Langmuir probe measurements while the self-bias potential was derived with the aid of an oscilloscope. From these data it was possible to estimate the mean energy of ions bombarding the PVC surface. Chlorine, carbon and oxygen contamination were detected on the surface of the as-received PVC. Upon exposure to the plasma, the proportion of chlorine was observed to decrease while that of oxygen increased. Consequently, the wettability and surface energy

Treatment of PVC using an alternative low energy ion bombardment procedure

International Nuclear Information System (INIS)

Rangel, Elidiane C.; Santos, Nazir M. dos; Bortoleto, José Roberto R.; Durrant, Steven F.; Schreiner, Wido H.; Honda, Roberto Y.; Cássia C Rangel, Rita de; Cruz, Nilson C.

2011-01-01

In many applications, polymers have progressively substituted traditional materials such as ceramics, glasses, and metals. Nevertheless, the use of polymeric materials is still limited by their surface properties. Frequently, selective modifications are necessary to suit the surface to a given application. Amongst the most common treatments, plasma immersion ion implantation (PIII) has attracted the attention of many researchers owing to its versatility and practicality. This method, however, requires a power supply to provide high voltage (tens of kV) negative pulses, with a controlled duty cycle, width and frequency. Owing to this, the implementation of PIII on the industrial scale can become economically inviable. In this work, an alternative plasma treatment that enables low energy ion bombardment without the need of a high voltage pulse generator is presented. To evaluate the efficiency of the treatment of polymers, polyvinylchloride, PVC, specimens were exposed to 5 Pa argon plasmas for 3600 s, at excitation powers, P, of between 10 and 125 W. Through contact angle and atomic force microscopy data, the influence of P on the wettability, surface free energy and roughness of the samples was studied. Surface chemical composition was measured by X-ray photoelectron spectroscopy, XPS. To evaluate the effect of aging under atmospheric conditions, contact angle and XPS measurements were performed one and 1334 days after the treatment. The plasma potential and ion density around the driven electrode were determined from Langmuir probe measurements while the self-bias potential was derived with the aid of an oscilloscope. From these data it was possible to estimate the mean energy of ions bombarding the PVC surface. Chlorine, carbon and oxygen contamination were detected on the surface of the as-received PVC. Upon exposure to the plasma, the proportion of chlorine was observed to decrease while that of oxygen increased. Consequently, the wettability and surface energy

Modifying the conductivity of polypyrrole through low-energy lead ion implantation

International Nuclear Information System (INIS)

Booth, Marsilea Adela; Leveneur, Jérôme; Costa, Alexsandro Santos; Kennedy, John; Harbison, SallyAnn; Travas-Sejdic, Jadranka

2012-01-01

Interest lies in the creation of novel nanocomposite materials obtained through mixing, impregnation or incorporation techniques. One such technique is ion implantation which possesses the potential for retaining properties from the base material and implanted material as well as any effects observed from combining the two. To this end low-energy (15 keV) implantation of lead ions of various fluences was performed in conducting polypyrrole films. The presence of lead-rich particles was evidenced through transmission electron microscopy. An interesting trend was observed between fluence and conductivity. Of the fluences tested, the optimum fluences of lead ion implantation in polypyrrole films for enhanced conductivity are 5 × 10 14 at. cm −2 and 2 × 10 15 at. cm −2 . The conductivity and stability appear to result from a combination of effects: polymer degradation arising from ion beam damage, an increase in charge-carriers (dications) present after implantation and precipitation of Pb-rich nanoparticles. Monitoring conductivity over time showed increased retention of conductivity levels after lead implantation. Improvements in stability for polypyrrole open avenues for application and bring polypyrrole one step closer to practical use. A mechanism is suggested for this advantageous retained conductivity. -- Highlights: ► Implanted and characterized polypyrrole films with Pb ions at different fluences. ► Samples indicate high conductivity when implanted with particular fluences. ► Increase in charge carriers and precipitation of conductive Pb-rich phase. ► Conductivity stability is higher for some implanted fluences than for pristine polypyrrole.

Low-energy ion distribution functions on a magnetically quiet day at geostationary altitude (L = 7)

International Nuclear Information System (INIS)

Singh, N.; Raitt, W.J.; Yasuhara, F.

1982-01-01

By using averaged data from ATS 6, ion energy and pitch angle distribution functions were examined for a magnetically quiet day (July 18, 1974). The data showed that for both field-aligned and perpendicular fluxes, the population had a mixture of characteristic energies. It was found that over three different energy bands in the range 3-600 eV the distribution functions could be fairly well approximated by Maxwellian distributions with temperatures in the ranges 3-10 eV, 30-50 eV, and approximately 70 eV in energy bands of 3-30 eV, 30-140 eV, and 140-600 eV, respectively. Pitch angle distributions were found to vary the local time; strong field-aligned particle fluxes were measured in the midnight and afternoon sectors, minor field-aligned components persisted to some extent at all times, especially at low energies (E 0 was seen. By using the assumption that the plasma was corotating with the satellite, we have examined pitch angle scattering mechanisms responsible for the observed transformation of pitch angle distribution. It was found that a magnetic noise of power spectral density b 2 -3 γ 2 /Hz belonging to electromagnetic ion cyclotron mode (L mode) near the ion cyclotron frequency could be very effective in trapping the field-aligned fluxes by pitch angle scattering

Surface studies by low energy ion beams: Cu/Ru(0001) and Cu/O/Ru(0001)

Energy Technology Data Exchange (ETDEWEB)

Shen, Y.G.; O`Connor, D.J.; MacDonald, R.J. [Newcastle Univ., NSW (Australia). Dept. of Physics; Wandelt, H. [Institut fur Physikalische und Theoretische Chemie der Universitat Bonn, Bonn (Germany).; Zee, H. van [Eindhoven University of Technology, Eindhoven (Netherlands) Dept. of Physics

1993-12-31

The surface structure of Cu on Ru(OOO1) has been studied by low energy Li{sup +} ion scattering. It was found that Cu forms pseudomorphic islands for two layers. The effects of Cu on an O-precovered RU(OOO1) surface has also been investigated using keV He{sup +} ions. The results show that during the deposition of Cu, O is displaced from the Ru surface and migrated onto the top of the surface of the growing overlayer. The floated out O has been tested, showing a disordered overlayer. 5 refs., 3 figs.

Surface studies by low energy ion beams: Cu/Ru(0001) and Cu/O/Ru(0001)

Energy Technology Data Exchange (ETDEWEB)

Shen, Y G; O` Connor, D J; MacDonald, R J [Newcastle Univ., NSW (Australia). Dept. of Physics; Wandelt, H [Institut fur Physikalische und Theoretische Chemie der Universitat Bonn, Bonn (Germany).; Zee, H van [Eindhoven University of Technology, Eindhoven (Netherlands) Dept. of Physics

1994-12-31

The surface structure of Cu on Ru(OOO1) has been studied by low energy Li{sup +} ion scattering. It was found that Cu forms pseudomorphic islands for two layers. The effects of Cu on an O-precovered RU(OOO1) surface has also been investigated using keV He{sup +} ions. The results show that during the deposition of Cu, O is displaced from the Ru surface and migrated onto the top of the surface of the growing overlayer. The floated out O has been tested, showing a disordered overlayer. 5 refs., 3 figs.

Sputtering mechanisms of polycrystalline platinum by low energy ions

International Nuclear Information System (INIS)

Chernysh, V.S.; Eckstein, W.; Haidarov, A.A.; Kulikauskas, V.S.; Mashkova, E.S.; Molchanov, V.A.

1999-01-01

The results of an experimental study and a computer simulation with the TRIM.SP code of the angular distributions of atoms sputtered from polycrystalline platinum under 1.5-9 keV He + bombardment at the normal ion incidence are presented. It has been found that angular distributions of sputtered atoms are overcosine and that their shape is practically independent of the bombarding ion species and ion energy. Good agreement between experimental results and computer simulation data was found. Computer simulations of the partial angular distributions of Pt atoms ejected due to various sputtering mechanisms for He and Ar bombardments were performed. The role of different mechanisms in the formation of angular distributions of sputtered atoms has been analyzed

Low-energy heavy-ion reactions: Some recent developments

International Nuclear Information System (INIS)

Satchler, G.R.

1989-01-01

We address three areas: behavior of the optical model at low energies and associated phenomena, fusion at near- and sub-barrier energies; where does fusion occur?, and recent examples of explicit coupled-channels effects at low energies. 74 refs., 18 figs

Influence of copper single crystal structures on the reflection of low energy hydrogen and helium ions

International Nuclear Information System (INIS)

Feijen, H.H.W.

1975-01-01

A theoretical basis for the 'wedge-focussing' phenomenon is outlined. Investigations have been made to check up to what extent proton reflection can be simulated by using H 2 + or H 3 + as incident ions and analysing the reflected protons. The results of an experimental study of the influence of surface semi-channels on the reflection of low energy ( + , H 2 + and He + ions from copper single crystals with attention to the wedge-focussing effect are presented (G.T.H.)

Ion-induced particle desorption in time-of-flight medium energy ion scattering

Science.gov (United States)

Lohmann, S.; Primetzhofer, D.

2018-05-01

Secondary ions emitted from solids upon ion impact are studied in a time-of-flight medium energy ion scattering (ToF-MEIS) set-up. In order to investigate characteristics of the emission processes and to evaluate the potential for surface and thin film analysis, experiments employing TiN and Al samples were conducted. The ejected ions exhibit a low initial kinetic energy of a few eV, thus, requiring a sufficiently high acceleration voltage for detection. Molecular and atomic ions of different charge states originating both from surface contaminations and the sample material are found, and relative yields of several species were determined. Experimental evidence that points towards a predominantly electronic sputtering process is presented. For emitted Ti target atoms an additional nuclear sputtering component is suggested.

Low-energy-spread ion bunches from a trapped atomic gas

NARCIS (Netherlands)

Reijnders, M.P.; Kruisbergen, van P.A.; Taban, G.; Geer, van der S.B.; Mutsaers, P.H.A.; Vredenbregt, E.J.D.; Luiten, O.J.

2009-01-01

We present time-of-flight measurements of the longitudinal energy spread of pulsed ultracold ion beams, produced by near-threshold ionization of rubidium atoms captured in a magneto-optical atom trap. Well-defined pulsed beams have been produced with energies of only 1 eV and a root-mean-square

Evaluation of laser-driven ion energies for fusion fast-ignition research

Science.gov (United States)

Tosaki, S.; Yogo, A.; Koga, K.; Okamoto, K.; Shokita, S.; Morace, A.; Arikawa, Y.; Fujioka, S.; Nakai, M.; Shiraga, H.; Azechi, H.; Nishimura, H.

2017-10-01

We investigate laser-driven ion acceleration using kJ-class picosecond (ps) laser pulses as a fundamental study for ion-assisted fusion fast ignition, using a newly developed Thomson-parabola ion spectrometer (TPIS). The TPIS has a space- and weight-saving design, considering its use in an laser-irradiation chamber in which 12 beams of fuel implosion laser are incident, and, at the same time, demonstrates sufficient performance with its detectable range and resolution of the ion energy required for fast-ignition research. As a fundamental study on laser-ion acceleration using a ps pulse laser, we show proton acceleration up to 40 MeV at 1 × 10^{19} W cm^{-2}. The energy conversion efficiency from the incident laser into protons higher than 6 MeV is 4.6%, which encourages the realization of fusion fast ignition by laser-driven ions.

Internal energy deposition with silicon nanoparticle-assisted laser desorption/ionization (SPALDI) mass spectrometry

Science.gov (United States)

Dagan, Shai; Hua, Yimin; Boday, Dylan J.; Somogyi, Arpad; Wysocki, Ronald J.; Wysocki, Vicki H.

2009-06-01

The use of silicon nanoparticles for laser desorption/ionization (LDI) is a new appealing matrix-less approach for the selective and sensitive mass spectrometry of small molecules in MALDI instruments. Chemically modified silicon nanoparticles (30 nm) were previously found to require very low laser fluence in order to induce efficient LDI, which raised the question of internal energy deposition processes in that system. Here we report a comparative study of internal energy deposition from silicon nanoparticles to previously explored benzylpyridinium (BP) model compounds during LDI experiments. The internal energy deposition in silicon nanoparticle-assisted laser desorption/ionization (SPALDI) with different fluorinated linear chain modifiers (decyl, hexyl and propyl) was compared to LDI from untreated silicon nanoparticles and from the organic matrix, [alpha]-cyano-4-hydroxycinnamic acid (CHCA). The energy deposition to internal vibrational modes was evaluated by molecular ion survival curves and indicated that the ions produced by SPALDI have an internal energy threshold of 2.8-3.7 eV. This is slightly lower than the internal energy induced using the organic CHCA matrix, with similar molecular survival curves as previously reported for LDI off silicon nanowires. However, the internal energy associated with desorption/ionization from the silicon nanoparticles is significantly lower than that reported for desorption/ionization on silicon (DIOS). The measured survival yields in SPALDI gradually decrease with increasing laser fluence, contrary to reported results for silicon nanowires. The effect of modification of the silicon particle surface with semifluorinated linear chain silanes, including fluorinated decyl (C10), fluorinated hexyl (C6) and fluorinated propyl (C3) was explored too. The internal energy deposited increased with a decrease in the length of the modifier alkyl chain. Unmodified silicon particles exhibited the highest analyte internal energy

Low-energy N-ion beam biotechnology application in the induction of Thai jasmine rice mutant with improved seed storability

Science.gov (United States)

Semsang, Nuananong; Techarang, Jiranat; Yu, Liangdeng; Phanchaisri, Boonrak

2018-06-01

Low-energy heavy-ion beam is a novel biotechnology used for mutation induction in plants. We used a low-energy N-ion beam to induce mutations in Thai jasmine rice (Oryza sativa L. cv. KDML 105) to improve the yield and seed quality. Seeds of BKOS6, a Thai jasmine rice mutant previously induced by ion beams, were re-bombarded with 60-kV-accelerated N-ions (N++N2+) to fluences of 1-2 × 1016 ions/cm2. The resulting mutant, named HyKOS21, exhibited photoperiod insensitivity, semi-dwarfness, and high yield potential. Seed storability of the mutant was studied in natural and accelerated ageing conditions and compared to that of KDML 105 and six other Thai rice varieties. In both testing conditions, HyKOS21 mutant had the highest seed storability among the tested varieties. After storage in the natural condition for 18 months, HyKOS21 had a seed germination percentage nearly two times as that of the original KDML 105. Biochemical analysis showed that the lipid peroxidation level of the mutant seeds was the lowest among those of the tested varieties. Furthermore, an expression analysis of genes encoding lipoxygenase isoenzyme (lox1, lox2, and lox3) revealed that the mutant lacked expression of lox1 and lox2 and expressed only lox3 in seeds. These results may explain the improved seed longevity of the mutant after storage. This work provides further evidence of the modification of biological materials using a low-energy ion beam to produce rice mutants with improved yield and seed storability. The benefits of this technology, to create new varieties with improved values, could serve for local economic development.

Protective Sliding Carbon-Based Nanolayers Prepared by Argon or Nitrogen Ion-Beam Assisted Deposition on Ti6Al4V Alloy

Directory of Open Access Journals (Sweden)

Petr Vlcak

2016-01-01

Full Text Available The microstructure and the surface properties of samples coated by carbon-based nanolayer were investigated in an effort to increase the surface hardness and reduce the coefficient of friction of the Ti6Al4V alloy. Protective carbon-based nanolayers were fabricated by argon or nitrogen ion-beam assisted deposition at ion energy of 700 eV on Ti6Al4V substrates. The Raman spectra indicated that nanolayers had a diamond-like carbon character with sp2 rich bonds. The TiC and TiN compounds formed in the surface area were detected by X-ray diffraction. Nanoscratch tests showed increased adhesion of a carbon-based nanolayer deposited with ion assistance in comparison with a carbon nanolayer deposited without ion assistance. The results showed that argon ion assistance leads to greater nanohardness than a sample coated by a carbon-based nanolayer with nitrogen ion assistance. A more than twofold increase in nanohardness and a more than fivefold decrease in the coefficient of friction were obtained for samples coated by a carbon-based nanolayer with ion assistance, in comparison with the reference sample.

Remedial pulse programme for the production of monoenergetic ion beams of low energy

International Nuclear Information System (INIS)

Olubuyide, O.A.

1975-01-01

The technique involves an extension of sequential pulse techniques. An ion swarm is produced in a conventional mass-spectrometer ion source by a short electron beam pulse. Immediately, this swarm is accelerated impulsively by a short high voltage pulse on the repeller. The principal disadvantage of impulsive acceleration is that the final energy distribution of the ion swarm is broad especially at the lowest energies. At some instant during the passage of the ion swarm across the chamber second pulse is applied to the repeller--a ''remedial'' pulse which will accelerate the ions throughout the remainder of their passage and whose amplitude will be time-dependent. Slower ions must travel a greater distance in this ''remedial'' field than faster ions and will experience a proportionately greater increase in velocity from it. In this way, the remedial pulse can cause all the ions to acquire the same velocity at the exit slit. A limited experimental investigation has been made to examine the application of the proposed remedial pulse technique to existing ion sources. Application of the remedial pulse to impulsively-accelerated ion swarms reduced the energy distribution in the manner predicted by the theory but the quantitative reduction measured experimentally--a factor of approximately 2--was substantially less than the theoretical prediction of a factor of approximately 4. The limitations were characterized and a means of overcoming them was suggested in a new ion source of improved design. (Diss. Abstr. Int., B)

Ion assistance effects on electron beam deposited MgF sub 2 films

CERN Document Server

Alvisi, M; Della Patria, A; Di Giulio, M; Masetti, E; Perrone, M R; Protopapa, M L; Tepore, A

2002-01-01

Thin films of MgF sub 2 have been deposited by the ion-assisted electron-beam evaporation technique in order to find out the ion beam parameters leading to films of high laser damage threshold whose optical properties are stable under uncontrolled atmosphere conditions. It has been found that the ion-assisted electron-beam evaporation technique allows getting films with optical properties (refraction index and extinction coefficient) of high environmental stability by properly choosing the ion-source voltage and current. But, the laser damage fluence at 308 nm was quite dependent on the assisting ion beam parameters. Larger laser damage fluences have been found for the films deposited by using assisting ion beams delivered at lower anode voltage and current values. It has also been found that the films deposited without ion assistance were characterized by the highest laser damage fluence (5.9 J/cm sup 2) and the lowest environmental stability. The scanning electron microscopy analysis of the irradiated areas...

Ion temperature profiles from the plasma center to the edge of ASDEX combining high and low energy CX-diagnostics

International Nuclear Information System (INIS)

Verbeek, H.; Heinrich, O.; Schneider, R.; Fahrbach, H.U.; Herrmann, W.; Neuhauser, J.; Stroth, U.; Reiter, D.

1992-01-01

The charge exchange (CX) neutral energy distribution from ASDEX measured with the conventional neutral particle analyzers (NPA) at energies >500 eV are combined with the low energy CX spectra from the low energy neutral analyzer (LENA). In the region of overlap their shapes fit each other very well. With the 3D EIRENE code the neutral gas was simulated and ion temperature (T i ) profiles from the center to the edge are obtained. The T i values at the separatrix and the edge based on the LENA data are considerably lower than those suggested earlier from the NPA data. This is attributed to the different energy ranges - high energies for the NPA, low energies for LENA - that are used for the T i evaluation. (orig.)

Beam diagnostics for low energy beams

Directory of Open Access Journals (Sweden)

J. Harasimowicz

2012-12-01

Full Text Available Low-energetic ion and antimatter beams are very attractive for a number of fundamental studies. The diagnostics of such beams, however, is a challenge due to low currents down to only a few thousands of particles per second and significant fraction of energy loss in matter at keV beam energies. A modular set of particle detectors has been developed to suit the particular beam diagnostic needs of the ultralow-energy storage ring (USR at the future facility for low-energy antiproton and ion research, accommodating very low beam intensities at energies down to 20 keV. The detectors include beam-profile monitors based on scintillating screens and secondary electron emission, sensitive Faraday cups for absolute intensity measurements, and capacitive pickups for beam position monitoring. In this paper, the design of all detectors is presented in detail and results from beam measurements are shown. The resolution limits of all detectors are described and options for further improvement summarized. Whilst initially developed for the USR, the instrumentation described in this paper is also well suited for use in other low-intensity, low-energy accelerators, storage rings, and beam lines.

A Preliminary Study of the Application of a Model Animal-Caenorhabidity elegans' Exposure to a Low-Energy Ion Irradiation System

International Nuclear Information System (INIS)

Liu Xuelan; Cai Kezhou; Feng Huiyun; Xu An; Yuan Hang; Yu Zengliang

2007-01-01

Because of the lack of suitable animal models adapted to high vacuum stress in the low-energy ion implantation system, the bio-effects ion irradiation with an energy less than 50 keV on multi-cellular animal individuals have never been investigated so far. The nematode Caenorhabditis elegans has proved to be an excellent animal model used for the study of a broad spectrum of biological issues. The purpose of this work was to investigate the viability of this animal under ion irradiation. We studied the protection effects of glycerol and trehalose on the enhancement of nematodes' ability to bear the vacuum stress. The results showed that the survival of the nematodes was enhanced remarkably under long and slow desiccation, even without glycerol and trehalose. 15% glycerol showed a better anti-vacuum stress effect on the nematodes than trehalose did under short-time desiccation. Low-temperature pre-treatment or post-treatment of the samples had no obvious effect on the survival scored after argon ion irradiation. Moreover, little effect was induced by 15% glycerol- and vacuum-exposure on germ cell apoptosis, compared to the untreated control sample. It issuggested that such treatment would provide relatively low background for genotoxic evaluations with ion irradiation

An (e, 2e + ion) study of low-energy electron-impact ionization and fragmentation of tetrahydrofuran with high mass and energy resolutions

Science.gov (United States)

Ren, Xueguang; Pflüger, Thomas; Weyland, Marvin; Baek, Woon Yoon; Rabus, Hans; Ullrich, Joachim; Dorn, Alexander

2014-10-01

We study the low-energy (E0 = 26 eV) electron-impact induced ionization and fragmentation of tetrahydrofuran using a reaction microscope. All three final-state charged particles, i.e., two outgoing electrons and one fragment ion, are detected in triple coincidence such that the momentum vectors and, consequently, the kinetic energies for charged reaction products are determined. The ionic fragments are clearly identified in the experiment with a mass resolution of 1 amu. The fragmentation pathways of tetrahydrofuran are investigated by measuring the ion kinetic energy spectra and the binding energy spectra where an energy resolution of 1.5 eV has been achieved using the recently developed photoemission electron source. Here, we will discuss the fragmentation reactions for the cations C4H8O+, C4H7O+, C2H3O+, C3H_6^+, C3H_5^+, C3H_3^+, CH3O+, CHO+, and C2H_3^+.

Electron capture by multicharged ions at eV energies

International Nuclear Information System (INIS)

Havener, C.C.; Huq, M.S.; Meyer, F.W.; Phaneuf, R.A.

1988-01-01

A multicharged ion-atom merged-beams apparatus has been used in conjunction with the ORNL-ECR ion source to measure accurate absolute electron-capture cross sections in the energy range from below 1 eV/amu to 1500 eV/amu. Measurements for N/sup 3+,4+,5+/ /plus/ H(D) collisions indicate good agreement with available theoretical calculations. However, measurements with O 5+ /plus/ H(D) show an unexpected low-energy behavior which may be attributable to the ion-induced-dipole attraction between the reactants. Scaled Landau-Zener calculations presented here identify a transfer plus excitation channel which has the correct energy dependence at low energies. This finding suggest the need for a comprehensive coupled channel calculation which would include such product states. 25 refs., 8 figs

Progress and tendency in heavy ion irradiation mutation breeding

International Nuclear Information System (INIS)

Zhou Libin; Li Wenjian; Qu Ying; Li Ping

2008-01-01

In recent years, the intermediate energy heavy ion biology has been concerned rarely comparing to that of the low-energy ions. In this paper, we summarized the advantage of a new mutation breeding method mediated by intermediate energy heavy ion irradiations. Meanwhile, the present state of this mutation technique in applications of the breeding in grain crops, cash crops and model plants were introduced. And the preview of the heavy ion irradiations in gene-transfer, molecular marker assisted selection and spaceflight mutation breeding operations were also presented. (authors)

Adaptive response of low linear energy transfer X-rays for protection against high linear energy transfer accelerated heavy ion-induced teratogenesis.

Science.gov (United States)

Wang, Bing; Ninomiya, Yasuharu; Tanaka, Kaoru; Maruyama, Kouichi; Varès, Guillaume; Eguchi-Kasai, Kiyomi; Nenoi, Mitsuru

2012-12-01

Adaptive response (AR) of low linear energy transfer (LET) irradiations for protection against teratogenesis induced by high LET irradiations is not well documented. In this study, induction of AR by X-rays against teratogenesis induced by accelerated heavy ions was examined in fetal mice. Irradiations of pregnant C57BL/6J mice were performed by delivering a priming low dose from X-rays at 0.05 or 0.30 Gy on gestation day 11 followed one day later by a challenge high dose from either X-rays or accelerated heavy ions. Monoenergetic beams of carbon, neon, silicon, and iron with the LET values of about 15, 30, 55, and 200 keV/μm, respectively, were examined. Significant suppression of teratogenic effects (fetal death, malformation of live fetuses, or low body weight) was used as the endpoint for judgment of a successful AR induction. Existence of AR induced by low-LET X-rays against teratogenic effect induced by high-LET accelerated heavy ions was demonstrated. The priming low dose of X-rays significantly reduced the occurrence of prenatal fetal death, malformation, and/or low body weight induced by the challenge high dose from either X-rays or accelerated heavy ions of carbon, neon or silicon but not iron particles. Successful AR induction appears to be a radiation quality event, depending on the LET value and/or the particle species of the challenge irradiations. These findings would provide a new insight into the study on radiation-induced AR in utero. © 2012 Wiley Periodicals, Inc.

A Study of Mutation Breeding of High-Yielding Tryptophanase Escherichia coli by Low-Energy N+ Ion Beam Implantation

International Nuclear Information System (INIS)

Pang Min; Yao Jianming; Wang Dongmei

2009-01-01

Low energy ion beam has been widely applied in microbe breeding, plant breeding, gene transfer and cell modification. In this study, the Escherichia coli (E.coli) strain producing tryptophanase was irradiated by a low energy nitrogen ion beam with an energy of 10 keV at a fluence of 13 x 10 14 N + /cm 2 when glycerin at a 15% concentration was used as a protector. The effect on the biomass of E. coli after N + implantation was analyzed in detail by statistic methods. The screening methods used in this study were proven to be effective. After continuous mutagenicity, a high-yield tryptophanase strain was selected and both its biomass and enzymatic activity were higher than those of the parent strain. The results of scale-up production showed that the biomass could reach wet weight 8.2 g/L and 110 g L-tryptophan could be formed in the volume of the 1l enzymatic reaction system.

Ion beam assisted deposition of nano-structured C:Ni films

Energy Technology Data Exchange (ETDEWEB)

Abrasonis, G.; Muecklich, A.; Heller, R.; Heinig, K.H.; Gemming, S.; Moeller, W. [Helmholtz-Zentrum Dresden-Rossendorf, Dresden (Germany); Krause, M. [Helmholtz-Zentrum Dresden-Rossendorf, Dresden (Germany); Institute of Physics, TU Dresden (Germany)

2012-07-01

Nanostructures influence material properties dramatically due to size, shape and interface effects. Thus the control of the structure at the nanoscale is a key issue in nanomaterials science. The interaction of hyperthermal ions with solids is confined to the nanometer scale. Thus, it can be used to control the morphology evolution during multiphase film deposition. Ion-induced displacements occur in a thin surface layer of the growing film where they increase the atomic mobility for the phase separation. Here the growth-structure relationship of C:Ni (15 at.%) nanocomposite films grown by oblique incidence (45 ) ion beam assisted deposition is reported. The influences of the flux of an assisting Ar+ ion beam (0-140 eV) as well as of an elevated substrate temperature have been studied. The formation of elongated nickel nanoparticles is strongly promoted by the ion beam assistance. Moreover, the metal nanocolumns no longer align with the advancing surface, but with the incoming ions. A window of conditions is established within which the ion assistance leads to the formation of regular composition modulations with a well defined periodicity and tilt. As the dominating driving force for the pattern formation is of physical origin, this approach might be applicable to other immiscible systems.

Electronic structure of xenon implanted with low energy in amorphous silicon

International Nuclear Information System (INIS)

Barbieri, P.F.; Landers, R.; Oliveira, M.H. de; Alvarez, F.; Marques, F.C.

2007-01-01

Electronic structure of Xe implanted in amorphous silicon (a-Si) films are investigated. Xe atoms were implanted with low energy by ion beam assisted deposition (IBAD) technique during growth of the a-Si films. The Xe implantation energy varied in the 0-300 eV energy range. X-ray photoelectron spectroscopy (XPS), X-ray Auger excited spectroscopy (XAES) and X-ray absorption spectroscopy (XAS) were used for investigating the Xe electronic structure. The Xe M 4 N 45 N 45 transitions were measured to extract the Auger parameter and to analyze the initial state and relaxation contributions. It was found that the binding energy variation is mainly due to initial state contribution. The relaxation energy variation also shows that the Xe trapped environment depends on the implantation energy. XAS measurements reveals that Xe atoms are dispersed in the a-Si matrix

Toward Low-Cost, High-Energy Density, and High-Power Density Lithium-Ion Batteries

Science.gov (United States)

Li, Jianlin; Du, Zhijia; Ruther, Rose E.; AN, Seong Jin; David, Lamuel Abraham; Hays, Kevin; Wood, Marissa; Phillip, Nathan D.; Sheng, Yangping; Mao, Chengyu; Kalnaus, Sergiy; Daniel, Claus; Wood, David L.

2017-09-01

Reducing cost and increasing energy density are two barriers for widespread application of lithium-ion batteries in electric vehicles. Although the cost of electric vehicle batteries has been reduced by 70% from 2008 to 2015, the current battery pack cost (268/kWh in 2015) is still >2 times what the USABC targets (125/kWh). Even though many advancements in cell chemistry have been realized since the lithium-ion battery was first commercialized in 1991, few major breakthroughs have occurred in the past decade. Therefore, future cost reduction will rely on cell manufacturing and broader market acceptance. This article discusses three major aspects for cost reduction: (1) quality control to minimize scrap rate in cell manufacturing; (2) novel electrode processing and engineering to reduce processing cost and increase energy density and throughputs; and (3) material development and optimization for lithium-ion batteries with high-energy density. Insights on increasing energy and power densities of lithium-ion batteries are also addressed.

Measurement of ion energy by a calorimetric method

Energy Technology Data Exchange (ETDEWEB)

Mizuhashi, Kiyoshi; Tajima, Satoshi [Japan Atomic Energy Research Inst., Takasaki, Gunma (Japan). Takasaki Radiation Chemistry Research Establishment; Bunak, Suwat

1996-12-01

In calorimetric method, ion energy is determined based on the temperature changes during radiation of an absorbing material, radiation current and heat capacity of the calorimeter. This method is convenient and its measuring procedures are simple as well as the measuring apparatus. Here, the temperature changes of the calorimeter during {sup 14}N ion beam radiation were determined. The temperature increased linearly when irradiated with {sup 14}N{sup 3+}, 8.3 MeV or {sup 14}N{sup 2+}, 6 MeV, but not linearly for {sup 14}N{sup 1+}, 3.6 MeV, resulting in a comparatively large error. Thus, the measurement of ion energy by calorimetric method was found available as a convenient method for an accelerator having an energy stability less than 10{sup -3}. Especially this method seems to be useful for low-energy ion accelerator or ion injecting apparatus. (M.N.)

Charge transfer incollisions of Li3+ and Be4+ ions with atomic hydrogen at low impact energy

International Nuclear Information System (INIS)

Ohyama, T.; Itikawa, Y.

1981-08-01

Total charge transfer cross sections are calculated for the collisions of Li 3+ and Be 4+ ions with H(1s) atoms in the low energy region (E 3+ -H system, a reasonable agreement is found between the present calculation and the recent experiment. (author)

Crystal Collimation with Lead Ion Beams at Injection Energy in the LHC

CERN Document Server

Rossi, Roberto; Andreassen, Arvid; Butcher, Mark; Dionisio Barreto, Cristovao Andre; Masi, Alessandro; Mirarchi, Daniele; Montesano, Simone; Lamas Garcia, Inigo; Redaelli, Stefano; Scandale, Walter; Serrano Galvez, Pablo; Rijllart, Adriaan; Valentino, Gianluca; Galluccio, Francesca; CERN. Geneva. ATS Department

2015-01-01

During this MD, performed on December 2nd 2015, bent silicon crystals were tested with ion beams for a possible usage of crystal-assisted collimation. Tests were performed at injection energy, using both horizontal and vertical crystals. Ion channeling was observed for the first time with LHC beams at the record energy of 450 GeV and the channeled beams were probed with scans performed with secondary collimators. Measurements of cleaning efficiency of a crystal-based collimation system were also performed.

Determination of low-energy ion-induced electron yields from thin carbon foils

International Nuclear Information System (INIS)

Allegrini, Frederic; Wimmer-Schweingruber, Robert F.; Wurz, Peter; Bochsler, Peter

2003-01-01

Ion beams crossing thin carbon foils can cause electron emission from the entrance and exit surface. Thin carbon foils are used in various types of time-of-flight (TOF) mass spectrometers to produce start pulses for TOF measurements. The yield of emitted electrons depends, among other parameters, on the energy of the incoming ion and its mass, and it has been experimentally determined for a few projectile elements. The electron emission yield is of great importance for deriving abundance ratios of elements and isotopes in space plasmas using TOF mass spectrometers. We have developed a detector for measuring ion-induced electron yields, and we have extended the electron yield measurements for oxygen to energies relevant for solar wind research. We also present first measurements of the carbon foil electron emission yield for argon and iron in the solar wind energy range

Plant height revertants of Dominant Semidwarf mutant rice created by low-energy ion irradiation

Energy Technology Data Exchange (ETDEWEB)

Liu Binmei [Key Laboratory of Ion Beam Bioengineering, Institute of Plasma Physics, Chinese Academy of Sciences, Hefei 230031 (China); Wu Yuejin [Key Laboratory of Ion Beam Bioengineering, Institute of Plasma Physics, Chinese Academy of Sciences, Hefei 230031 (China)], E-mail: yjwu@ipp.ac.cn; Xu Xue; Song, M.; Zhao, M. [Key Laboratory of Ion Beam Bioengineering, Institute of Plasma Physics, Chinese Academy of Sciences, Hefei 230031 (China); Fu, X.D. [Institute of Genetics and Developmental Biology, Chinese Academy of Sciences, Beijing 100101 (China)

2008-04-15

Dominant Semidwarf mutant rice (Sdd) was obtained from its wild type (WT) by irradiation with a low-energy ion beam. Six tall revertants of Sdd were induced by irradiation. The revertants restored the plant height to that of WT plants. Investigation of the agronomic character and genetic analysis indicate that the revertants are similar to WT plants with putative different inherited mutations. The revertants were checked for DNA differences using the simple sequence repeat technique. Among 408 such primers used, only 2 primers detected mutation sites in the revertants, which provided the molecular evidence for the revertants induced from Sdd. This study indicates that ion irradiation may be used as a mutagen to create revertants for plant architecture studies and could be a new application.

Calorimetric low temperature detectors for heavy ion physics

Energy Technology Data Exchange (ETDEWEB)

Egelhof, P.; Kraft-Bermuth, S. [Gesellschaft fuer Schwerionenforschung mbH, Darmstadt (Germany)]|[Mainz Univ. (Germany). Inst. fuer Physik

2005-05-01

Calorimetric low temperature detectors have the potential to become powerful tools for applications in many fields of heavy ion physics. A brief overview of heavy ion physics at present and at the next generation heavy ion facilities is given with a special emphasis on the conditions for heavy ion detection and the potential advantage of cryogenic detectors for applications in heavy ion physics. Two types of calorimetric low temperature detectors for the detection of energetic heavy ions have been developed and their response to the impact of heavy ions was investigated systematically for a wide range of energies (E=0.1-360 MeV/amu) and ion species ({sup 4}He.. {sup 238}U). Excellent results with respect to energy resolution, {delta}E/E ranging from 1 to 5 x 10{sup -3} even for the heaviest ions, and other basic detector properties such as energy linearity with no indication of a pulse height defect, energy threshold, detection efficiency and radiation hardness have been obtained, representing a considerable improvement as compared to conventional heavy ion detectors based on ionization. With the achieved performance, calorimetric low temperature detectors bear a large potential for applications in various fields of basic and applied heavy ion research. A brief overview of a few prominent examples, such as high resolution nuclear spectroscopy, high resolution nuclear mass determination, which may be favourably used for identification of superheavy elements or in direct reaction experiments with radioactive beams, as well as background discrimination in accelerator mass spectrometry, is given, and first results are presented. For instance, the use of cryogenic detectors allowed to improve the sensitivity in trace analysis of {sup 236}U by one order of magnitude and to determine the up to date smallest isotope ratio of {sup 236}U/{sup 238}U = 6.1 x 10{sup -12} in a sample of natural uranium. Besides the detection of heavy ions, the concept of cryogenic detectors also

Calorimetric low temperature detectors for heavy ion physics

International Nuclear Information System (INIS)

Egelhof, P.; Kraft-Bermuth, S.; Mainz Univ.

2005-07-01

Calorimetric low temperature detectors have the potential to become powerful tools for applications in many fields of heavy ion physics. A brief overview of heavy ion physics at present and at the next generation heavy ion facilities is given with a special emphasis on the conditions for heavy ion detection and the potential advantage of cryogenic detectors for applications in heavy ion physics. Two types of calorimetric low temperature detectors for the detection of energetic heavy ions have been developed and their response to the impact of heavy ions was investigated systematically for a wide range of energies (E=0.1-360 MeV/amu) and ion species ( 4 He.. 238 U). Excellent results with respect to energy resolution, ΔE/E ranging from 1 to 5 x 10 -3 even for the heaviest ions, and other basic detector properties such as energy linearity with no indication of a pulse height defect, energy threshold, detection efficiency and radiation hardness have been obtained, representing a considerable improvement as compared to conventional heavy ion detectors based on ionization. With the achieved performance, calorimetric low temperature detectors bear a large potential for applications in various fields of basic and applied heavy ion research. A brief overview of a few prominent examples, such as high resolution nuclear spectroscopy, high resolution nuclear mass determination, which may be favourably used for identification of superheavy elements or in direct reaction experiments with radioactive beams, as well as background discrimination in accelerator mass spectrometry, is given, and first results are presented. For instance, the use of cryogenic detectors allowed to improve the sensitivity in trace analysis of 236 U by one order of magnitude and to determine the up to date smallest isotope ratio of 236 U/ 238 U = 6.1 x 10 -12 in a sample of natural uranium. Besides the detection of heavy ions, the concept of cryogenic detectors also provides considerable advantage for X

Initial state dependence of low-energy electron emission in fast ion atom collisions

International Nuclear Information System (INIS)

Moshammer, R.; Schmitt, W.; Kollmus, H.; Ullrich, J.; Fainstein, P.D.; Hagmann, S.

1999-06-01

Single and multiple ionization of Neon and Argon atoms by 3.6 MeV/u Au 53+ impact has been explored in kinematically complete experiments. Doubly differential cross sections for low-energy electron emission have been obtained for defined charge state of the recoiling target ion and the receding projectile. Observed target specific structures in the electron continuum are attributable to the nodal structure of the initial bound state momentum distribution. The experimental data are in excellent accord with CDW-EIS single ionization calculations if multiple ionization is considered appropriately. (orig.)

Low mass dilepton production in heavy ion collisions

International Nuclear Information System (INIS)

Pisutova, N.; Pisut, J.

1988-01-01

The total transverse energy dependence of low mass dilepton (and single low p T photon) production was demonstrated to be a signature of the onset of the evidence of plasma formation in heavy ion collisions. Cross-sections are presented for low mass dilepton production in proton-nucleus and heavy ion collisions which represent lower bounds for the ''collectivization'' and the thermalization of matter produced in the collision. Higher cross-section are a signature of the onset of the formation of thermalized matter. (author). 4 figs., 11 refs

Ion beam assisted deposition of metal-coatings on beryllium

International Nuclear Information System (INIS)

Tashlykov, I.S.; Tul'ev, V.V.

2015-01-01

Thin films were applied on beryllium substrates on the basis of metals (Cr, Ti, Cu and W) with method of the ion-assisted deposition in vacuum. Me/Be structures were prepared using 20 kV ions irradiation during deposition on beryllium neutral fraction generated from vacuum arc plasma. Rutherford back scattering and computer simulation RUMP code were applied to investigate the composition of the modified beryllium surface. Researches showed that the superficial structure is formed on beryllium by thickness ~ 50-60 nm. The covering composition includes atoms of the deposited metal (0.5-3.3 at. %), atoms of technological impurity carbon (0.8-1.8 at. %) and oxygen (6.3-9.9 at. %), atoms of beryllium from the substrate. Ion assisted deposition of metals on beryllium substrate is accompanied by radiation enhanced diffusion of metals, oxygen atoms in the substrate, out diffusion of beryllium, carbon atoms in the deposited coating and sputtering film-forming ions assists. (authors)

Calorimetric low-temperature detectors on semiconductor base for the energy-resolving detection of heavy ions

International Nuclear Information System (INIS)

Kienlin, A. von.

1994-01-01

In the framework of this thesis for the first time calorimetric low-temperature detectors for the energy-resolving detection of heavy ions were developed and successfully applied. Constructed were two different detector types, which work both with a semiconductor thermistor. The temperature increasement effected by a particle incidence is read out. In the first detector type the thermistor was simutaneously used as absorber. The thickness of the germanium crystals was sufficient in order to stop the studied heavy ions completely. In the second type, a composed calorimeter, a sapphire crystal, which was glued on a germanium thermistor, served as absorber for the incident heavy ions. The working point of the calorimeter lies in the temperature range (1.2-4.2 K), which is reachable with a pumped 4 He cryostat. The temperatur increasement of the calorimeter amounts after the incidence of a single α particle about 20-30 μK and that after a heavy ion incidence up to some mK. An absolute energy resolution of 400-500 keV was reached. In nine beam times the calorimeters were irradiated by heavy ions ( 20 Ne, 40 Ar, 136 Xe, 208 Pb, 209 Bi) of different energies (3.6 MeV/nucleon< E<12.5 MeV/nucleon) elastically scattered from gold foils. In the pulse height spectra of the first detector type relatively broad, complex-structurated line shapes were observed. By systematic measurements dependences of the complex line structures on operational parameters of the detector, the detector temperature, and the position of the incident particle could be detected. Together with the results of further experiments a possible interpretation of these phenomena is presented. Contrarily to the complex line structures of the pure germanium thermistor the line shapes in the pulse height spectra, which were taken up in a composite germanium/sapphire calorimeter, are narrow and Gauss-shaped

Application of heavy-ion microbeam system at Kyoto University: Energy response for imaging plate by single ion irradiation

International Nuclear Information System (INIS)

Tosaki, M.; Nakamura, M.; Hirose, M.; Matsumoto, H.

2011-01-01

A heavy-ion microbeam system for cell irradiation has been developed using an accelerator at Kyoto University. We have successfully developed proton-, carbon-, fluorine- and silicon-beams in order to irradiate a micro-meter sized area with ion counting, especially single ion irradiation. In the heavy-ion microbeam system, an imaging plate (IP) was utilized for beam diagnostics on the irradiation. The IP is widely used for radiography studies in biology. However, there are a few studies on the low linear energy transfer (LET) by single ions, i.e., low-intensity exposure. Thus we have investigated the energy response for the IP, which can be utilized for microbeam diagnostics.

Energy and Pitch Distribution of Spontaneously-generated High-energy Bulk Ions in the RFP

Science.gov (United States)

Kim, Jungha; Anderson, Jay; Reusch, Joshua; Eilerman, Scott; Capecchi, William

2014-10-01

Magnetic reconnection events in the reversed field pinch (RFP) are known to heat bulk and impurity ions. Runaway due to a parallel electric field has recently been confirmed as an important acceleration mechanism for high energy test ions supplied by a neutral beam. This effect does not, however, explain the change in distribution of nearly Maxwellian bulk ions at a reconnection event. By operating MST near maximum current and low electron density, significant fusion neutron flux can be generated without neutral beam injection. The bulk ion distribution created in these plasmas is well-confined, non-Maxwellian, and can be measured by the Advanced Neutral Particle Analyzer (ANPA) placed at a radial or tangential porthole. Data show a high energy tail up to 25 keV with a relatively higher signal in the low energy channels (8-15 keV) at the radial port following a reconnection event. Analysis of the energy dependence of trapped orbits sampled by the ANPA at the radial view implies an abundance of lower energy particles in regions of higher neutral density. This mandates a careful deconvolution of the measured ANPA signal to compute the fast ion distribution. This work is supported by the US DOE and NSF.

Making waves: Kinetic processes controlling surface evolution during low energy ion sputtering

International Nuclear Information System (INIS)

Chan, W.L.; Chason, Eric

2007-01-01

When collimated beams of low energy ions are used to bombard materials, the surface often develops a periodic pattern or ''ripple'' structure. Different types of patterns are observed to develop under different conditions, with characteristic features that depend on the substrate material, the ion beam parameters, and the processing conditions. Because the patterns develop spontaneously, without applying any external mask or template, their formation is the expression of a dynamic balance among fundamental surface kinetic processes, e.g., erosion of material from the surface, ion-induced defect creation, and defect-mediated evolution of the surface morphology. In recent years, a comprehensive picture of the different kinetic mechanisms that control the different types of patterns that form has begun to emerge. In this article, we provide a review of different mechanisms that have been proposed and how they fit together in terms of the kinetic regimes in which they dominate. These are grouped into regions of behavior dominated by the directionality of the ion beam, the crystallinity of the surface, the barriers to surface roughening, and nonlinear effects. In sections devoted to each type of behavior, we relate experimental observations of patterning in these regimes to predictions of continuum models and to computer simulations. A comparison between theory and experiment is used to highlight strengths and weaknesses in our understanding. We also discuss the patterning behavior that falls outside the scope of the current understanding and opportunities for advancement

On the origin of apparent Z{sub 1}-oscillations in low-energy heavy-ion ranges

Energy Technology Data Exchange (ETDEWEB)

Wittmaack, Klaus, E-mail: wittmaack@helmholtz-muenchen.de

2016-12-01

It has been known for quite some time that projected ranges measured by Rutherford backscattering spectrometry for a variety of low-energy heavy ions (energy-to-mass ratio E/M{sub 1} less than ∼0.4 keV/u) exhibit significant or even pronounced deviations from the theoretically predicted smooth dependence on the projectile’s atomic number Z{sub 1}. Studied most thoroughly for silicon targets, the effect was attributed to ‘Z{sub 1} oscillations’ in nuclear stopping, in false analogy to the well established Z{sub 1} oscillations in electronic stopping of low-velocity light ions. In this study an attempt was made to get order into range data published by four different groups. To achieve the goal, the absolute values of the ranges from each group had to be (re-)adjusted by up to about ±10%. Adequate justification for this approach is provided. With the changes made, similarities and differences between the different sets of data became much more transparent than before. Very important is the finding that the distortions in heavy-ion ranges are not oscillatory in nature but mostly one-sided, reflecting element-specific transport of implanted atoms deeper into the solid. Exceptions are rare gas and alkali elements, known to exhibit bombardment induced transport towards the surface. Range distortions reported for Xe and Cs could be reproduced on the basis of the recently established rapid relocation model. The extent of transport into the bulk, observed with many other elements, notably noble metals and lanthanides, reflects their high mobility under ion bombardment. The complexity of the element specific transport phenomena became fully evident by also examining the limited number of data available for the apparent range straggling. Profile broadening was identified in several cases. One element (Eu) was found to exhibit profile narrowing. This observation suggests that implanted atoms may agglomerate at peak concentrations up to 2%, possibly a tool for

Systematic studies of heavy ion collisions in the low SIS energy region

International Nuclear Information System (INIS)

Li Qingfeng; Wang Yongjia; Guo Chenchen; Li Zhuxia

2014-01-01

After inserting the Skyrme potential energy density functions for potential update, more detailed medium modifications for nucleon-nucleon elastic cross sections, and the isospin effect for cluster recognition into the Ultra-relativistic Quantum Molecular Dynamics (UrQMD), the dynamic process of heavy ion collisions (HICs) at low SIS energies (about 40∼400 MeV/u) is primarily studied. And, after systematically studying the emission and collective flows of light clusters from HICs in such beam energy region, the sensitive observables especially to the density dependent symmetry energy at supra-normal densities are focused. It is found that: (1)the initial neutron/proton ratio dependence of the balance energy of neutrons from mass-symmetric Sn isotopes can be taken as a useful probe to constrain the stiffness of the nuclear symmetry energy; (2) the transverse velocity/momentum dependence of the elliptic flow ratio of neutrons and protons or hydrogen isotopes (v 2 n /v 2 p,H ) is also sensitive to symmetry energy. The χ 2 analysis from the difference bet e the theoretical (taking Skyrme potential parametrizations with incompressibility K 0 being almost same but the slope parameter L of symmetry energy being largely different) and experimental (taking FOPI/LAND data) v 2 n /v 2 H values determines the value of L to be (89 ± 45) MeV within in a 2σ uncertainty. (authors)

Localized subsurface modification of materials using micro-low-energy multiple ion beamlets

Directory of Open Access Journals (Sweden)

Abhishek Chowdhury

2011-12-01

Full Text Available Generation of focused multiple ion beamlets from an intense microwave plasma source is investigated for the creation of localized subsurface modification of materials. Unlike conventional single element focused ion beam (FIB systems, the plasma source is capable of providing ion beams of multiple elements. Two types of plasma electrodes (PE are employed, one with a honeycomb structure with notched apertures and another with a 5×5 array of through apertures, both attached to the plasma source and are capable of generating focused ion beamlets (50 - 100 μm diameter in a patterned manner. Measurements of ion saturation current near the PE indicate that the plasma is uniform over an area of ∼ 7 cm2, which is further confirmed by uniformity in extracted beam current through the apertures. The ion beams are applied to investigate change in electrical sheet resistance Rs of metallic thin films in a controlled manner by varying the ionic species and beam energy. Results indicate a remarkable increase in Rs with beam energy (∼ 50 % at 1 keV for Ar ions, and with ionic species (∼ 90% for Krypton ions at 0.6 keV, when 80 nm thick copper films are irradiated by ∼2 cm diameter ion beams. Ion induced surface roughness is considered as the main mechanism for this change as confirmed by atomic force microscopy (AFM measurements. Predictions for micro-beamlet induced change in Rs are discussed. The experimental results are verified using TRIM and AXCEL-INP simulations.

Lithium-ion Energy Storage at Very Low Temperatures, Phase I

Data.gov (United States)

National Aeronautics and Space Administration — Li-ion batteries with specific energy >180 Wh/kg, calendar life (>15years), and a wide operating temperature range (-60oC to 60oC) are crucial for the...

Large area ion and plasma beam sources

Energy Technology Data Exchange (ETDEWEB)

Waldorf, J. [IPT Ionen- und Plasmatech. GmbH, Kaiserslautern (Germany)

1996-06-01

In the past a number of ion beam sources utilizing different methods for plasma excitation have been developed. Nevertheless, a widespread use in industrial applications has not happened, since the sources were often not able to fulfill specific demands like: broad homogeneous ion beams, compatibility with reactive gases, low ion energies at high ion current densities or electrical neutrality of the beam. Our contribution wants to demonstrate technical capabilities of rf ion and plasma beam sources, which can overcome the above mentioned disadvantages. The physical principles and features of respective sources are presented. We report on effective low pressure plasma excitation by electron cyclotron wave resonance (ECWR) for the generation of dense homogeneous plasmas and the rf plasma beam extraction method for the generation of broad low energy plasma beams. Some applications like direct plasma beam deposition of a-C:H and ion beam assisted deposition of Al and Cu with tailored thin film properties are discussed. (orig.).

Large area ion and plasma beam sources

International Nuclear Information System (INIS)

Waldorf, J.

1996-01-01

In the past a number of ion beam sources utilizing different methods for plasma excitation have been developed. Nevertheless, a widespread use in industrial applications has not happened, since the sources were often not able to fulfill specific demands like: broad homogeneous ion beams, compatibility with reactive gases, low ion energies at high ion current densities or electrical neutrality of the beam. Our contribution wants to demonstrate technical capabilities of rf ion and plasma beam sources, which can overcome the above mentioned disadvantages. The physical principles and features of respective sources are presented. We report on effective low pressure plasma excitation by electron cyclotron wave resonance (ECWR) for the generation of dense homogeneous plasmas and the rf plasma beam extraction method for the generation of broad low energy plasma beams. Some applications like direct plasma beam deposition of a-C:H and ion beam assisted deposition of Al and Cu with tailored thin film properties are discussed. (orig.)

Neutralization of methyl cation via chemical reactions in low-energy ion-surface collisions with fluorocarbon and hydrocarbon self-assembled monolayer films.

Science.gov (United States)

Somogyi, Arpád; Smith, Darrin L; Wysocki, Vicki H; Colorado, Ramon; Lee, T Randall

2002-10-01

Low-energy ion-surface collisions of methyl cation at hydrocarbon and fluorocarbon self-assembled monolayer (SAM) surfaces produce extensive neutralization of CH3+. These experimental observations are reported together with the results obtained for ion-surface collisions with the molecular ions of benzene, styrene, 3-fluorobenzonitrile, 1,3,5-triazine, and ammonia on the same surfaces. For comparison, low-energy gas-phase collisions of CD3+ and 3-fluorobenzonitrile molecular ions with neutral n-butane reagent gas were conducted in a triple quadrupole (QQQ) instrument. Relevant MP2 6-31G*//MP2 6-31G* ab initio and thermochemical calculations provide further insight in the neutralization mechanisms of methyl cation. The data suggest that neutralization of methyl cation with hydrocarbon and fluorocarbon SAMs occurs by concerted chemical reactions, i.e., that neutralization of the projectile occurs not only by a direct electron transfer from the surface but also by formation of a neutral molecule. The calculations indicate that the following products can be formed by exothermic processes and without appreciable activation energy: CH4 (formal hydride ion addition) and C2H6 (formal methyl anion addition) from a hydrocarbon surface and CH3F (formal fluoride addition) from a fluorocarbon surface. The results also demonstrate that, in some cases, simple thermochemical calculations cannot be used to predict the energy profiles because relatively large activation energies can be associated with exothermic reactions, as was found for the formation of CH3CF3 (formal addition of trifluoromethyl anion).

Linac4 low energy beam measurements with negative hydrogen ions

Energy Technology Data Exchange (ETDEWEB)

Scrivens, R., E-mail: richard.scrivens@cern.ch; Bellodi, G.; Crettiez, O.; Dimov, V.; Gerard, D.; Granemann Souza, E.; Guida, R.; Hansen, J.; Lallement, J.-B.; Lettry, J.; Lombardi, A.; Midttun, Ø.; Pasquino, C.; Raich, U.; Riffaud, B.; Roncarolo, F.; Valerio-Lizarraga, C. A.; Wallner, J.; Yarmohammadi Satri, M.; Zickler, T. [CERN, 1211 Geneva 23 (Switzerland)

2014-02-15

Linac4, a 160 MeV normal-conducting H{sup −} linear accelerator, is the first step in the upgrade of the beam intensity available from the LHC proton injectors at CERN. The Linac4 Low Energy Beam Transport (LEBT) line from the pulsed 2 MHz RF driven ion source, to the 352 MHz RFQ (Radiofrequency Quadrupole) has been built and installed at a test stand, and has been used to transport and match to the RFQ a pulsed 14 mA H{sup −} beam at 45 keV. A temporary slit-and-grid emittance measurement system has been put in place to characterize the beam delivered to the RFQ. In this paper a description of the LEBT and its beam diagnostics is given, and the results of beam emittance measurements and beam transmission measurements through the RFQ are compared with the expectation from simulations.

Structuring of silicon with low energy focused ion beams

Energy Technology Data Exchange (ETDEWEB)

Nebiker, P.W.; Doebeli, M. [Paul Scherrer Inst. (PSI), Villigen (Switzerland); Muehle, R. [Eidgenoessische Technische Hochschule, Zurich (Switzerland)

1997-09-01

The defect production in silicon induced by focused ion beam irradiation as a function of energy and projectile mass has been investigated and compared to the measured sputter yield. The aim was to find optimal beam parameters for the structuring of semiconductors with a minimum amount of defects produced per removed atom. (author) 2 figs., 2 refs.

A high-energy electron beam ion trap for production of high-charge high-Z ions

International Nuclear Information System (INIS)

Knapp, D.A.; Marrs, R.E.; Elliott, S.R.; Magee, E.W.; Zasadzinski, R.

1993-01-01

We have developed a new high-energy electron beam ion trap, the first laboratory source of low-energy, few-electron, high-Z ions. We describe the device and report measurements of its performance, including the electron beam diameter, current density and energy, and measurements of the ionization balance for several high-Z elements in the trap. This device opens up a wide range of possible experiments in atomic physics, plasma physics, and nuclear physics. (orig.)

Low preveance ion source bridges low and high intensities in ion implantation

International Nuclear Information System (INIS)

Orr, F.D.; Mayhall, D.

1976-01-01

The Low Perveance Ion Source developed by Accelerators, Inc. offers the Semiconductor Industry the advantage of processing medium to high intensity implants on a system which will also implant 200 to 300 wafers an hour at MOS doses. Stable source beam currents can be varied over three orders of magnitude by variation of a single source parameter. This source uses a new computer designed Low Perveance extraction optics which is completely new to the Ion Implantation Industry. Test data and calculations are shown which define the versatility of this system. Scanned currents from 1 microamp to 400 microamps allow for a variety of production processing. Beam characteristics feature low energy spread (less than 10 eV) and low divergence (less than 3 degrees). Beam control optics consist of a double focusing analyzing magnet and two triplet quadrupoles. The source may be fitted with an oven for feeding of solid materials and analyzed beam currents in the milliamp range for development purposes. The batch processing, hybrid scanning end station is most applicable for high current beams as well as high volume batch processings of MOS Implants. Results of development work toward increased currents using both solid and gas feed material with the Low Perveance source are presented. System improvements including Accel-Decel and a third extraction element are discussed

Corrosion properties of aluminum based alloys deposited by ion beam assisted deposition

International Nuclear Information System (INIS)

Enders, B.; Krauss, S.; Wolf, G.K.

1994-01-01

The replacement of cadmium coatings by other protective measures is an important task because of the environmentally detrimental properties of cadmium. Therefore, aluminum and aluminum alloy coatings containing elements such as silicon or magnesium with more positive or negative positions in the galvanic series in relation to pure aluminum were deposited by ion beam assisted deposition onto glass and low carbon steel. Pure aluminum films were deposited onto low carbon steel in order to study the influence of the ion-to-atom arrival ratio and the angle of ion incidence on the corrosion properties. For examination of the pitting behavior as a function of the concentration of alloying element, quasipotentiostatic current-potential and potentiostatic current-time plots were measured in chlorine-containing acetate buffer. It is shown that these alloys can protect steel substrates under uniform and pitting corrosion conditions considerably better than pure aluminum coatings. ((orig.))

Ion - beam assisted process in the physical deposition of organic thin layers

Energy Technology Data Exchange (ETDEWEB)

Dimov, D; Spassova, E; Assa, J; Danev, G [Acad. J .Malinowski Central Laboratory of Photoprocesses, Bulgarian Academy of Sciences, Acad. G. Bonchev Str., Bl.109, 1113 Sofia (Bulgaria); Georgiev, A, E-mail: dean@clf.bas.b [University of Chemical Technology and Metallurgy, 8 Kl. Ohridski Blvd., 1756 Sofia (Bulgaria)

2010-04-01

A novel method was developed for physical deposition of thin polyimide layers by applying an argon plasma assisted process. The influence was investigated of the plasma on the combined molecular flux of the two thermally evaporated precursors - oxydianiline and pyromellitic dianhydride. The effects observed on the properties of the deposited films are explained with the increased energy of the precursor molecules resulting from the ion-molecular collisions. As could be expected, molecules with higher energy possess higher mobility and thus determine the modification of the films structure and their electrical properties.

Prospects for high energy heavy ion accelerators

International Nuclear Information System (INIS)

Leemann, C.

1979-03-01

The acceleration of heavy ions to relativistic energies (T greater than or equal to 1 GeV/amu) at the beam intensities required for fundamental research falls clearly in the domain of synchrotons. Up to date, such beams have been obtained from machines originally designed as proton acccelerators by means of modified RF-programs, improved vacuum and, most importantly, altered or entirely new injector systems. Similarly, for the future, substantial changes in synchrotron design itself are not foreseen, but rather the judicious application and development of presently known principles and technologies and a choice of parameters optimized with respect to the peculiarities of heavy ions. The low charge to mass ratio, q/A, of very heavy ions demands that superconducting magnets be considered in the interest of the highest energies for a given machine size. Injector brightness will continue to be of highest importance, and although space charge effects such as tune shifts will be increased by a factor q 2 /A compared with protons, advances in linac current and brightness, rather than substantially higher energies are required to best utilize a given synchrotron acceptance. However, high yeilds of fully stripped, very heavy ions demand energies of a few hundred MeV/amu, thus indicating the need for a booster synchrotron, although for entirely different reasons than in proton facilities. Finally, should we consider colliding beams, the high charge of heavy ions will impose severe current limitations and put high demands on system design with regard to such quantities as e.g., wall impedances or the ion induced gas desorption rate, and advanced concepts such as low β insertions with suppressed dispersion and very small crossing angles will be essential to the achievement of useful luminosities

High yield antibiotic producing mutants of Streptomyces erythreus induced by low energy ion implantation

Science.gov (United States)

Yu, Chen; Zhixin, Lin; Zuyao, Zou; Feng, Zhang; Duo, Liu; Xianghuai, Liu; Jianzhong, Tang; Weimin, Zhu; Bo, Huang

1998-05-01

Conidia of Streptomyces erythreus, an industrial microbe, were implanted by nitrogen ions with energy of 40-60 keV and fluence from 1 × 10 11 to 5 × 10 14 ions/cm 2. The logarithm value of survival fraction had good linear relationship with the logarithm value of fluence. Some mutants with a high yield of erythromycin were induced by ion implantation. The yield increment was correlated with the implantation fluence. Compared with the mutation results induced by ultraviolet rays, mutation effects of ion implantation were obvious having higher increasing erythromycin potency and wider mutation spectrum. The spores of Bacillus subtilis were implanted by arsenic ions with energy of 100 keV. The distribution of implanted ions was measured by Rutherford Backscattering Spectrometry (RBS) and calculated in theory. The mechanism of mutation induced by ion implantation was discussed.

Effect of low-energy hydrogen ion implantation on dendritic web silicon solar cells

Science.gov (United States)

Rohatgi, A.; Meier, D. L.; Rai-Choudhury, P.; Fonash, S. J.; Singh, R.

1986-01-01

The effect of a low-energy (0.4 keV), short-time (2-min), heavy-dose (10 to the 18th/sq cm) hydrogen ion implant on dendritic web silicon solar cells and material was investigated. Such an implant was observed to improve the cell open-circuit voltage and short-circuit current appreciably for a number of cells. In spite of the low implant energy, measurements of internal quantum efficiency indicate that it is the base of the cell, rather than the emitter, which benefits from the hydrogen implant. This is supported by the observation that the measured minority-carrier diffusion length in the base did not change when the emitter was removed. In some cases, a threefold increase of the base diffusion length was observed after implantation. The effects of the hydrogen implantation were not changed by a thermal stress test at 250 C for 111 h in nitrogen. It is speculated that hydrogen enters the bulk by traveling along dislocations, as proposed recently for edge-defined film-fed growth silicon ribbon.

CR-39 nuclear track detector application for the diagnostics of low energy high power ion beams

Energy Technology Data Exchange (ETDEWEB)

Opekounov, M S; Pechenkin, S A; Remnev, G E [Nuclear Physics Institute, Tomsk (Russian Federation); Ivonin, I V [Siberian Physical-Technical Institute, Tomsk (Russian Federation)

1997-12-31

The results of investigation of the spectral composition of ion beams generated by the magneto-insulated ion diode of the MUK-M and TEMP accelerators. The energy and mass characteristics of the accelerated ion beam were determined by a Thomson spectrometer with a CR-39 plate detector (MOM - Atomki Nuclear Track Detector, Type MA-ND/p). The accelerated ion energy was from 40 to 240 keV. The ion current density range was from 1 to 10 A/cm{sup 2}. The mass composition contained hydrogen, nitrogen, carbon and aluminum ions. The individual track analysis showed the track form, depth and diameter in dependence on the ion mass and energy. (author). 2 figs., 5 refs.

Correlation between the structural and optical properties of ion-assisted hafnia thin films

Science.gov (United States)

Scaglione, Salvatore; Sarto, Francesca; Alvisi, Marco; Rizzo, Antonella; Perrone, Maria R.; Protopapa, Maria L.

2000-03-01

The ion beam assistance during the film growth is one of the most useful method to obtain dense film along with improved optical and structural properties. Afnia material is widely used in optical coating operating in the UV region of the spectrum and its optical properties depend on the production method and the physical parameters of the species involved in the deposition process. In this work afnia thin films were evaporated by an e-gun and assisted during the growth process. The deposition parameters, ion beam energy, density of ions impinging on the growing film and the number of arrival atoms from the crucible, have been related to the optical and structural properties of the film itself. The absorption coefficient and the refractive index were measured by spectrophotometric technique while the microstructure has been studied by means of x-ray diffraction. A strictly correlation between the grain size, the optical properties and the laser damage threshold measurements at 248 nm was found for the samples deposited at different deposition parameters.

Bioastrophysical Aspects of Low Energy Ion Irradiation of Frozen Anthracene Containing Water

International Nuclear Information System (INIS)

Tuleta, M.; Gabla, L.; Madej, J.

2001-01-01

The origin of life on Earth remains a fascinating mystery in spite of many theories existing on this subject. However, it seems that simple prebiotic molecules could play an essential role in the formation of more complex organisms. In our experiment, we synthesized a class of these molecules (quinones) bombarding frozen anthracene containing water with low energy hydrogen ions. This experiment roughly simulated the astrophysical conditions which one can find in the solar system. Thus, we can hypothesize that prebiotic molecules could be created by interaction of the solar wind with interplanetary dust grains. The delivery of these molecules to early Earth may have contributed to the generation of life on our planet

Low-energy hydrogen flux measurements at the TORTUR tokamak with negative ion conversion

International Nuclear Information System (INIS)

Toledo, Wiebo van.

1990-01-01

The interaction of a tokamak plasma with the vessel wall is one of the most important subjects in thermonuclear research. The information about this interaction is not complete without direct detection of the outward stream of low-energy, down to a few electronvolts, neutral hydrogen or deuterium atoms. The detection of these atoms is the subject of this thesis. An appropriate method to analyse the atoms which are emitted from the edge plasma is to use a time-of-flight analyser. This kind of apparatus selects particles according to their velocities with-out distinguishing between different masses. If these analysers use the Daly-method the lowest measurable energy of the hydrogen atoms is approximately 25 electronvolts. To increase the detection efficiency a new detection method was developed. This new method uses the conversion of hydrogen atoms into H- ions on a cesiated tungsten surface. By this conversion the lowest measurable energy is decreased down to 5 electron-volt. (author). 93 refs.; 44 figs.; 7 tabs

Ultra-low-energy ion-beam synthesis of nanometer-separated Si nanoparticles and Ag nanocrystals 2D layers

Science.gov (United States)

Carrada, M.; Haj Salem, A.; Pecassou, B.; Paillard, V.; Ben Assayag, G.

2018-03-01

2D networks of Si and Ag nanocrystals have been fabricated in the same SiO2 matrix by Ultra-Low-Energy Ion-Beam-Synthesis. Our synthesis scheme differs from a simple sequential ion implantation and its key point is the control of the matrix integrity through an appropriate intermediate thermal annealing. Si nanocrystal layer is synthesised first due to high thermal budget required for nucleation, while the second Ag nanocrystal plane is formed during a subsequent implantation due to the high diffusivity of Ag in silica. The aim of this work is to show how it is possible to overcome the limitation related to ion mixing and implantation damage to obtain double layers of Si-NCs and Ag-NCs with controlled characteristics. For this, we take advantage of annealing under slight oxidizing ambient to control the oxidation of Si-NCs and the Si excess in the matrix. The nanocrystal characteristics and in particular their position and size can be adjusted thanks to a compromise between the implantation energy, the implanted dose for both Si and Ag ions and the intermediate annealing conditions (atmosphere, temperature and duration).

P.I.A.F.E project: long distance transport of low energy exotic ions; Projet P.I.A.F.E: transport d`ions exotiques de basse energie sur longue distance

Energy Technology Data Exchange (ETDEWEB)

Nibart, V.

1996-01-17

The aim of the PIAFE project is the long distance (400 m) transport of a low energy radioactive ion beam from the ILL (Institut Laue Langevin) to the ISN (Institut des Sciences Nucleaires) of Grenoble (France). The production, extraction, ionization and mass separation of ions is performed by the ILL, while the transformation of ions into multicharged ions, their stripping and acceleration is carried out at the ISN. Theoretical and experimental studies for a simple an original guidance solution have shown that such a long transport, even delicate, should not encounter any major difficulty. The main objectives of this thesis is the technical realization of a 18 m section of this transport line. The problem of supports and focalizing elements alignment has been solved together with the other problems such as: the central trajectory deviation due to alignment defects and to the Earth`s magnetic field; the particle losses due to charge exchange with the residual gas and the emittance increase by Coulomb scattering. It has been demonstrated that a 90% transmission can be obtained using a 25 keV energy and a 10{sup -7} mbar vacuum. Experimental measurements using a rubidium ion source have allowed to validate a theoretical model of emittance increase due to the residual gas-ions interactions. The increase of emittance with respect to the pressure has been measured using four residual gases of different mass. (J.S.). 29 refs., 61 figs., 19 tabs., 8 photos., 4 appends.

Determination of the sticking coefficient of low-energy hydrocarbon ions

International Nuclear Information System (INIS)

Tichmann, Klaus Markus

2011-01-01

The maximum lifetime of future fusion facilities like ITER will be limited by the retention of radioactive tritium in the vessel walls. The retention is significantly affected by the sticking coefficient of hydrocarbon molecules that form in the machine. Using a particle-beam experiment, this sticking coefficient was determined for multiple species at energies below 200 eV. The equipment for the production of the particle beam was optimised and a new ion source for hydrocarbon ions was developed. Simulations using molecular dynamics were performed in parallel to improve the understanding of the processes at the surface.

Aerosol-assisted extraction of silicon nanoparticles from wafer slicing waste for lithium ion batteries.

Science.gov (United States)

Jang, Hee Dong; Kim, Hyekyoung; Chang, Hankwon; Kim, Jiwoong; Roh, Kee Min; Choi, Ji-Hyuk; Cho, Bong-Gyoo; Park, Eunjun; Kim, Hansu; Luo, Jiayan; Huang, Jiaxing

2015-03-30

A large amount of silicon debris particles are generated during the slicing of silicon ingots into thin wafers for the fabrication of integrated-circuit chips and solar cells. This results in a significant loss of valuable materials at about 40% of the mass of ingots. In addition, a hazardous silicon sludge waste is produced containing largely debris of silicon, and silicon carbide, which is a common cutting material on the slicing saw. Efforts in material recovery from the sludge and recycling have been largely directed towards converting silicon or silicon carbide into other chemicals. Here, we report an aerosol-assisted method to extract silicon nanoparticles from such sludge wastes and their use in lithium ion battery applications. Using an ultrasonic spray-drying method, silicon nanoparticles can be directly recovered from the mixture with high efficiency and high purity for making lithium ion battery anode. The work here demonstrated a relatively low cost approach to turn wafer slicing wastes into much higher value-added materials for energy applications, which also helps to increase the sustainability of semiconductor material and device manufacturing.

Structuring of material parameters in lithium niobate crystals with low-mass, high-energy ion radiation

Science.gov (United States)

Peithmann, K.; Eversheim, P.-D.; Goetze, J.; Haaks, M.; Hattermann, H.; Haubrich, S.; Hinterberger, F.; Jentjens, L.; Mader, W.; Raeth, N. L.; Schmid, H.; Zamani-Meymian, M.-R.; Maier, K.

2011-10-01

Ferroelectric lithium niobate crystals offer a great potential for applications in modern optics. To provide powerful optical components, tailoring of key material parameters, especially of the refractive index n and the ferroelectric domain landscape, is required. Irradiation of lithium niobate crystals with accelerated ions causes strong structured modifications in the material. The effects induced by low-mass, high-energy ions (such as 3He with 41 MeV, which are not implanted, but transmit through the entire crystal volume) are reviewed. Irradiation yields large changes of the refractive index Δn, improved domain engineering capability within the material along the ion track, and waveguiding structures. The periodic modification of Δn as well as the formation of periodically poled lithium niobate (PPLN) (supported by radiation damage) is described. Two-step knock-on displacement processes, 3He→Nb and 3He→O causing thermal spikes, are identified as origin for the material modifications.

Implanting very low energy atomic ions into surface adsorbed cage molecules: the formation/emission of Cs/C60+

International Nuclear Information System (INIS)

Kolodney, Eli; Kaplan, Andrey; Manor, Yoni; Bekkerman, Anatoly; Tsipinyuk, Boris

2004-01-01

Full Text: We demonstrate the formation of an endo-complex via a collision of energetic ions with molecular overlayers on a surface. An incoming atomic ion is encapsulated inside a very large molecule or cluster by implanting the primary ion into the target species, which then recovers its original structure or rearrange itself around the implanted ion in some stable configuration. Here we describe an experiment resulting in the formation and ejection of an endo-complex, within a single collision. We study the formation and emission of endohedral fullerenes, Cs/C 60 + and Cs/C 70 + , following a single collision of Cs + ion with a sub-monolayer of C 60 (steady state coverage) on gold and silicon surfaces and with a sub-monolayer of C 70 on gold. A continuous low energy (E 0 =35-220 eV) Cs + ion beam hit the Cs + covered surface and the collisional formation and ejection of the endohedral Cs/Cs 60 + complex, within a single Cs + /C 60 collision was observed and characterized. Several experimental observations clearly demonstrate the single collision nature of the combined atom penetration endo-complex ejection event. The fullerene molecule is actually being picked up off the surface by the penetrating Cs + ion. The evidence for the trapping of the Cs + ion inside the fullerene cage is given both by the appearance of the Cs/Cs (602-2n) + (n=1-5) sequence and its termination at Cs/Cs 50 + . Kinetic Energy Distributions (KEDs) of the outgoing Cs/Cs 60 + were measured for two different Cs + impact energies under field-free conditions. The most striking observation is the near independence of the KEDs on the impact energy. Both KEDs peak around 1.2 eV with similar line shapes. A simple model for the formation/ejection/fragmentation dynamics of the endohedral complex is proposed and is found to be in good agreement with the experimental results

Direct acceleration of ions to low and medium energies by a crossed-laser-beam configuration

Directory of Open Access Journals (Sweden)

Yousef I. Salamin

2011-07-01

Full Text Available Calculations show that 10 keV helium and carbon ions, injected midway between two identical 1 TW-power crossed laser beams of radial polarization, can be accelerated in vacuum to energies of utility in ion lithography. As examples, identical laser beams, crossed at 10° and focused to waist radii of 7.42  μm, accelerate He^{2+} and C^{6+} ions to average kinetic energies near 75 and 165 keV over distances averaging less than 7 and 6 mm, respectively. The spread in kinetic energy in both cases is less than 1% and the particle average angular deflection is less than 7 mrad. More energy-demanding industrial applications require higher-power laser beams for their direct ion laser acceleration.

Low-energy ion distribution functions on a magnetically quiet day at geostationary altitude /L = 7/

Science.gov (United States)

Singh, N.; Raitt, W. J.; Yasuhara, F.

1982-01-01

Ion energy and pitch angle distribution functions are examined for a magnetically quiet day using averaged data from ATS 6. For both field-aligned and perpendicular fluxes, the populations have a mixture of characteristic energies, and the distribution functions can be fairly well approximated by Maxwellian distributions over three different energy bands in the range 3-600 eV. Pitch angle distributions varying with local time, and energy distributions are used to compute total ion density. Pitch angle scattering mechanisms responsible for the observed transformation of pitch angle distribution are examined, and it is found that a magnetic noise of a certain power spectral density belonging to the electromagnetic ion cyclotron mode near the ion cyclotron frequency can be effective in trapping the field aligned fluxes by pitch angle scattering.

Carbon nitride films synthesized by NH3-ion-beam-assisted deposition

International Nuclear Information System (INIS)

Song, H.W.; Cui, F.Z.; He, X.M.; Li, W.Z.; Li, H.D.

1994-01-01

Carbon nitride thin film films have been prepared by NH 3 -ion-beam-assisted deposition with bombardment energies of 200-800 eV at room temperature. These films have been characterized by transmission electron microscopy. Auger electron spectroscopy and x-ray photoelectron spectroscopy for chemical analysis. It was found that the structure of the films varied with the bombardment energy. In the case of 400 eV bombardment, the tiny crystallites immersed on an amorphous matrix were identified to be β-C 3 N 4 . X-ray photoelectron spectroscopy indicated that some carbon atoms and nitrogen atoms form unpolarized covalent bonds in these films. (Author)

International meeting on micro- and nanotechnologies with application of ion beams accelerated up to low and medium energies. Abstracts of reports

International Nuclear Information System (INIS)

Romanov, V.A.

2007-01-01

The collection contains abstracts presented on the International meeting Micro- and nanotechnologies with application of ion beams accelerated up to low and medium energies which took place 16-18 October 2007 in Obninsk (Russian Federation). The potentialities of ion implantation for creation of nanostructures is discussed. The accelerator complexes applied for manufacture of nanostructural materials are considered [ru

Low-velocity ion stopping in a dense and low-temperature plasma target

Science.gov (United States)

Deutsch, Claude; Popoff, Romain

2007-07-01

We investigate the stopping specificities involved in the heating of thin foils irradiated by intense ion beams in the 0.3-3 MeV/amu energy range and in close vicinity of the Bragg peak. Considering a swiftly ionized target to eV temperatures before expansion while retaining solid-state density, a typical warm dense matter (WDM) situation thus arises. We stress low Vp stopping through ion diffusion in the given target plasma. This allows to include the case of a strongly magnetized target in a guiding center approximation. We also demonstrate that the ion projectile penetration depth in target is significantly affected by multiple scattering on target electrons. The given plasma target is taken weakly coupled with Maxwell electron either with no magnetic field ( B=0) or strongly magnetized ( B≠0). Dynamical coupling between ion projectiles energy losses and projectiles charge state will also be addressed.

A comparative study on low-energy ion beam and neutralized beam modifications of naked DNA and biological effect on mutation

Science.gov (United States)

Sarapirom, S.; Thongkumkoon, P.; Prakrajang, K.; Anuntalabhochai, S.; Yu, L. D.

2012-02-01

DNA conformation change or damage induced by low-energy ion irradiation has been of great interest owing to research developments in ion beam biotechnology and ion beam application in biomedicine. Mechanisms involved in the induction of DNA damage may account for effect from implanting ion charge. In order to check this effect, we used both ion beam and neutralized beam at keV energy to bombard naked DNA. Argon or nitrogen ion beam was generated and extracted from a radiofrequency (RF) ion source and neutralized by microwave-driven plasma in the beam path. Plasmid DNA pGFP samples were irradiated with the ion or neutralized beam in vacuum, followed by gel electrophoresis to observe changes in the DNA conformations. It was revealed that the ion charge played a certain role in inducing DNA conformation change. The subsequent DNA transfer into bacteria Escherichia coli ( E. coli) for mutation analysis indicated that the charged ion beam induced DNA change had high potential in mutation induction while neutralized beam did not. The intrinsic reason was attributed to additional DNA deformation and contortion caused by ion charge exchange effect so that the ion beam induced DNA damage could hardly be completely repaired, whereas the neutralized beam induced DNA change could be more easily recoverable owing to absence of the additional DNA deformation and contortion.

A comparative study on low-energy ion beam and neutralized beam modifications of naked DNA and biological effect on mutation

International Nuclear Information System (INIS)

Sarapirom, S.; Thongkumkoon, P.; Prakrajang, K.; Anuntalabhochai, S.; Yu, L.D.

2012-01-01

DNA conformation change or damage induced by low-energy ion irradiation has been of great interest owing to research developments in ion beam biotechnology and ion beam application in biomedicine. Mechanisms involved in the induction of DNA damage may account for effect from implanting ion charge. In order to check this effect, we used both ion beam and neutralized beam at keV energy to bombard naked DNA. Argon or nitrogen ion beam was generated and extracted from a radiofrequency (RF) ion source and neutralized by microwave-driven plasma in the beam path. Plasmid DNA pGFP samples were irradiated with the ion or neutralized beam in vacuum, followed by gel electrophoresis to observe changes in the DNA conformations. It was revealed that the ion charge played a certain role in inducing DNA conformation change. The subsequent DNA transfer into bacteria Escherichia coli (E. coli) for mutation analysis indicated that the charged ion beam induced DNA change had high potential in mutation induction while neutralized beam did not. The intrinsic reason was attributed to additional DNA deformation and contortion caused by ion charge exchange effect so that the ion beam induced DNA damage could hardly be completely repaired, whereas the neutralized beam induced DNA change could be more easily recoverable owing to absence of the additional DNA deformation and contortion.

Investigate the ultrasound energy assisted adsorption mechanism of nickel(II) ions onto modified magnetic cobalt ferrite nanoparticles: Multivariate optimization.

Science.gov (United States)

Mehrabi, Fatemeh; Alipanahpour Dil, Ebrahim

2017-07-01

In present study, magnetic cobalt ferrite nanoparticles modified with (E)-N-(2-nitrobenzylidene)-2-(2-(2-nitrophenyl)imidazolidine-1-yl) ethaneamine (CoFe 2 O 4 -NPs-NBNPIEA) was synthesized and applied as novel adsorbent for ultrasound energy assisted adsorption of nickel(II) ions (Ni 2+ ) from aqueous solution. The prepared adsorbent characterized by Fourier transforms infrared spectroscopy (FT-IR), transmission electron microscope (TEM), vibrating sample magnetometer (VSM) and X-ray diffraction (XRD). The dependency of adsorption percentage to variables such as pH, initial Ni 2+ ions concentration, adsorbent mass and ultrasound time were studied with response surface methodology (RSM) by considering the desirable functions. The quadratic model between the dependent and independent variables was built. The proposed method showed good agreement between the experimental data and predictive value, and it has been successfully employed to adsorption of Ni 2+ ions from aqueous solution. Subsequently, the experimental equilibrium data at different concentration of Ni 2+ ions and 10mg amount of adsorbent mass was fitted to conventional isotherm models like Langmuir, Freundlich, Tempkin, Dubinin-Radushkevich and it was revealed that the Langmuir is best model for explanation of behavior of experimental data. In addition, conventional kinetic models such as pseudo-first and second-order, Elovich and intraparticle diffusion were applied and it was seen that pseudo-second-order equation is suitable to fit the experimental data. Copyright © 2016 Elsevier B.V. All rights reserved.

High-resolution X-ray spectra from low-temperature, highly charged ions

International Nuclear Information System (INIS)

Beiersdorfer, P.

1996-09-01

The electron beam ion traps (EBIT) at Livermore were designed for studying the x-ray emission of highly charged ions produced and excited by a monoenergetic electron beam. The precision with which the x-ray emission can be analyzed has recently been increased markedly when it became possible to decouple the temperature of the ions from the energy of the electron beam by several orders of magnitude. By adjusting the trap parameters, ion temperatures as low as 15.8±4.4 eV for Ti 20+ and 59.4±9.9 eV for Cs 45+ were achieved. These temperatures were more than two orders of magnitude lower than the energy of the multi-keV electron beam used for the production and excitation of the ions. A discussion of the techniques used to produce and study low-temperature highly charged ions is presented in this progress report. The low ion temperatures enabled measurements heretofore impossible. As an example, a direct observation of the natural line width of fast electric dipole allowed x-ray transitions is described. From the observed natural line width and b making use of the time-energy relations of the uncertainty principle we were able to determine a radiative transition rate of 1.65 fs for the 2p-3d resonance transition in neonlike Cs 45+ . A brief discussion of other high-precision measurements enabled by our new technique is also given

Recoil ion charge state distributions in low energy Arq+ - Ar collisions

International Nuclear Information System (INIS)

Vancura, J.; Marchetti, V.; Kostroun, V.O.

1992-01-01

We have measured the recoil ion charge state distributions in Ar q+ -- Ar (8≤q≤16) collisions at 2.3 qkeV and 0.18qkeV by time of flight (TOF) spectroscopy. For Ar 8-16+ , recoil ion charge states up to 6+ are clearly present, indicating that the 3p subshell in the target atom is being depleted, while for Ar 10-16+ , there is evidence that target 3s electrons are also being removed. Comparison of the recoil ion charge state spectra at 2.3 and 0.18 qkeV shows that for a given projectile charge, there is very little dependence of the observed recoil target charge state distribution on projectile energy

Ion induced high energy electron emission from copper

International Nuclear Information System (INIS)

Ruano, G.; Ferron, J.

2008-01-01

We present measurements of secondary electron emission from Cu induced by low energy bombardment (1-5 keV) of noble gas (He + , Ne + and Ar + ) and Li + ions. We identify different potential and kinetic mechanisms and find the presence of high energetic secondary electrons for a couple of ion-target combinations. In order to understand the presence of these fast electrons we need to consider the Fermi shuttle mechanism and the different ion neutralization efficiencies.

Proper surface channelling of low energy argon ions incident on a nickel (110) crystal

International Nuclear Information System (INIS)

Evdokimov, I.N.; Berg, J.A. van den; Armour, D.G.

1979-01-01

The scattering behaviour of 6 keV argon ions from a nickel (110) surface has been investigated for specular reflection under grazing incidence conditions. The occurrence of an anomalously high energy loss has been confirmed and the transition from chain scattering at large scattering angles to a distinctly different type of scattering at small angles has been investigated. The characteristics of the low angle scattering phenomena, which dominate the observed spectra at scattering angles below about 18 0 , may be explained in terms of a surface hyperchannelling model in which the incident ions are confined to move within the shallow 'potential valleys' between two atomic rows in the surface. The critical angle for occurrence of this phenomena which is distinctly different from surface semichannelling has been evaluated with Lindhard's standard string potential. The experimentally measured critical angles are in good agreement with the calculated ones. (author)

Surface Passivation and Junction Formation Using Low Energy Hydrogen Implants

Science.gov (United States)

Fonash, S. J.

1985-01-01

New applications for high current, low energy hydrogen ion implants on single crystal and polycrystal silicon grain boundaries are discussed. The effects of low energy hydrogen ion beams on crystalline Si surfaces are considered. The effect of these beams on bulk defects in crystalline Si is addressed. Specific applications of H+ implants to crystalline Si processing are discussed. In all of the situations reported on, the hydrogen beams were produced using a high current Kaufman ion source.

Fragmentation of pure and hydrated clusters of 5Br-uracil by low energy carbon ions: observation of hydrated fragments

Czech Academy of Sciences Publication Activity Database

Castrovilli, M. C.; Markush, P.; Bolognesi, P.; Rousseau, P.; Maclot, S.; Cartoni, A.; Delaunay, R.; Domaracka, A.; Kočišek, Jaroslav; Huber, B. A.; Avaldi, L.

2017-01-01

Roč. 19, č. 30 (2017), s. 19807-19814 ISSN 1463-9076 Institutional support: RVO:61388955 Keywords : fragmentation * nano-hydrated 5BrU clusters * low energy carbon ions Subject RIV: CF - Physical ; Theoretical Chemistry OBOR OECD: Physical chemistry Impact factor: 4.123, year: 2016

Low-energy solar electrons and ions observed at Ulysses February-April, 1991 - The inner heliosphere as a particle reservoir

Science.gov (United States)

Roelof, E. C.; Gold, R. E.; Simnett, G. M.; Tappin, S. J.; Armstrong, T. P.; Lanzerotti, L. J.

1992-01-01

Ulysses observations at 2.5 AU of 38-315 keV electrons and 61-4752 keV ions during February-April 1991 suggest in several ways that, during periods of sustained high solar activity, the inner heliosphere serves as a 'reservoir' for low-energy solar particles. Particle increases were not associated one-to-one with large X-ray flares because of their poor magnetic connection, yet intensities in March-April remained well above their February levels. The rise phase of the particle event associated with the great flare of 2245UT March 22 lasted most of two days, while throughout the one-week decay phase, the lowest-energy ion fluxes were nearly equal at Ulysses and earth (IMP-8).

Analysis of retarding field energy analyzer transmission by simulation of ion trajectories

Science.gov (United States)

van de Ven, T. H. M.; de Meijere, C. A.; van der Horst, R. M.; van Kampen, M.; Banine, V. Y.; Beckers, J.

2018-04-01

Retarding field energy analyzers (RFEAs) are used routinely for the measurement of ion energy distribution functions. By contrast, their ability to measure ion flux densities has been considered unreliable because of lack of knowledge about the effective transmission of the RFEA grids. In this work, we simulate the ion trajectories through a three-gridded RFEA using the simulation software SIMION. Using idealized test cases, it is shown that at high ion energy (i.e., >100 eV) the transmission is equal to the optical transmission rather than the product of the individual grid transparencies. Below 20 eV, ion trajectories are strongly influenced by the electric fields in between the grids. In this region, grid alignment and ion focusing effects contribute to fluctuations in transmission with ion energy. Subsequently the model has been used to simulate the transmission and energy resolution of an experimental RFEA probe. Grid misalignments reduce the transmission fluctuations at low energy. The model predicts the minimum energy resolution, which has been confirmed experimentally by irradiating the probe with a beam of ions with a small energy bandwidth.

Ion-induced crystal damage during plasma-assisted MBE growth of GaN layers

Science.gov (United States)

Kirchner, V.; Heinke, H.; Birkle, U.; Einfeldt, S.; Hommel, D.; Selke, H.; Ryder, P. L.

1998-12-01

Gallium nitride layers were grown by plasma-assisted molecular-beam epitaxy on (0001)-oriented sapphire substrates using an electron cyclotron resonance (ECR) and a radio frequency (rf) plasma source. An applied substrate bias was varied from -200 to +250 V, resulting in a change of the density and energy of nitrogen ions impinging the growth surface. The layers were investigated by high-resolution x-ray diffractometry and high-resolution transmission electron microscopy (HRTEM). Applying a negative bias during growth has a marked detrimental effect on the crystal perfection of the layers grown with an ECR plasma source. This is indicated by a change in shape and width of (0002) and (202¯5) reciprocal lattice points as monitored by triple axis x-ray measurements. In HRTEM images, isolated basal plane stacking faults were found, which probably result from precipitation of interstitial atoms. The crystal damage in layers grown with a highly negative substrate bias is comparable to that observed for ion implantation processes at orders of magnitude larger ion energies. This is attributed to the impact of ions on the growing surface. None of the described phenomena was observed for the samples grown with the rf plasma source.

Ion induced high energy electron emission from copper

Energy Technology Data Exchange (ETDEWEB)

Ruano, G. [Instituto de Desarrollo Tecnologico para la Industria Quimica, Consejo Nacional de Investigaciones Cientificas y Tecnicas and Universidad Nacional del Litoral Gueemes 3450 CC 91, 3000 Santa Fe (Argentina)], E-mail: gdruano@ceride.gov.ar; Ferron, J. [Instituto de Desarrollo Tecnologico para la Industria Quimica, Consejo Nacional de Investigaciones Cientificas y Tecnicas and Universidad Nacional del Litoral Gueemes 3450 CC 91, 3000 Santa Fe (Argentina); Departamento de Ingenieria de Materiales, Facultad de Ingenieria Quimica, Consejo Nacional de Investigaciones Cientificas y Tecnicas and Universidad Nacional del Litoral Gueemes 3450 CC 91, 3000 Santa Fe (Argentina)

2008-11-15

We present measurements of secondary electron emission from Cu induced by low energy bombardment (1-5 keV) of noble gas (He{sup +}, Ne{sup +} and Ar{sup +}) and Li{sup +} ions. We identify different potential and kinetic mechanisms and find the presence of high energetic secondary electrons for a couple of ion-target combinations. In order to understand the presence of these fast electrons we need to consider the Fermi shuttle mechanism and the different ion neutralization efficiencies.

Low-energy ion bombardment of frozen bacterial spores and its relevance to interplanetary space

Energy Technology Data Exchange (ETDEWEB)

Tuleta, M.; Gabla, L. [Jagiellonian Univ., Institute of Physics, Cracow (Poland); Szkarlat, A. [Clinical Children' s Hospital of the Jagiellonian Univ., Medical College, Lab. of Microbiology, Cracow (Poland)

2005-04-01

The panspermia hypothesis is concerned with the dissemination of life in space in the form of simple micro-organisms. During an interplanetary journey the micro-organisms are subjected to the action of, among others, the solar wind. We have simulated experimentally such conditions bombarding frozen bacterial spores with low-energy hydrogen ions. On the basis of the results obtained and our earlier research, a new look at the panspermia hypothesis is discussed. The general conclusion is that unprotected naked spores, their conglomerates and protected spores can survive attack of the solar wind, although to various degrees. (authors)

Low-energy ion bombardment of frozen bacterial spores and its relevance to interplanetary space

International Nuclear Information System (INIS)

Tuleta, M.; Gabla, L.; Szkarlat, A.

2005-01-01

The panspermia hypothesis is concerned with the dissemination of life in space in the form of simple micro-organisms. During an interplanetary journey the micro-organisms are subjected to the action of, among others, the solar wind. We have simulated experimentally such conditions bombarding frozen bacterial spores with low-energy hydrogen ions. On the basis of the results obtained and our earlier research, a new look at the panspermia hypothesis is discussed. The general conclusion is that unprotected naked spores, their conglomerates and protected spores can survive attack of the solar wind, although to various degrees. (authors)

Kinetic energy and charge distributions of multiply charged ions produced by heavy ions and by synchrotron radiation

International Nuclear Information System (INIS)

Levin, J.C.; Biedermann, C.; Cederquist, H.; Liljeby, L.; Short, R.T.; Sellin, I.A.

1989-01-01

This paper contrasts two methods of production of multiply charged ions which may have application in future hot-atom chemistry experiments. Interest in extending the study of ion-atom collisions from MeV to keV to eV energies has grown rapidly in the last decade as previously inaccessible astrophysical, fusion, and spectroscopic problems have been addressed. One of these methods involves highly charged secondary beams formed from ions created in dilute gas samples irradiated by fast (MeV), high-charge-state, heavy ions. The measurements show, however, that such ions often have mean recoil energies two orders of magnitude higher than kinetic energies of ions in similar charge states resulting from vacancy cascades of atomic inner shells photoionized by synchrotron x rays. These results may be applicable to development of a cold source of highly charged ions featuring low energy spread and good angular definition. Results from other laboratories (Grandin et al at Ganil, Ullrich et al in Frankfurt, and Watson et al at Texas A ampersand M) will also be discussed

Medium energy ion scattering (MEIS)

International Nuclear Information System (INIS)

Dittmann, K.; Markwitz, A.

2009-01-01

This report gives an overview about the technique and experimental study of medium energy ion scattering (MEIS) as a quantitative technique to determine and analyse the composition and geometrical structure of crystalline surfaces and near surface-layers by measuring the energy and yield of the backscattered ions. The use of a lower energy range of 50 to 500 keV accelerated ions impinging onto the target surface and the application of a high-resolution electrostatic energy analyser (ESA) makes medium energy ion scattering spectroscopy into a high depth resolution and surface-sensitive version of RBS with less resulting damage effects. This report details the first steps of research in that field of measurement technology using medium energetic backscattered ions detected by means of a semiconductor radiation detector instead of an ESA. The study of medium energy ion scattering (MEIS) has been performed using the 40 keV industrial ion implanter established at GNS Sciences remodelled with supplementary high voltage insulation for the ion source in order to apply voltages up to 45 kV, extra apertures installed in the beamline and sample chamber in order to set the beam diameter accurately, and a semiconductor radiation detector. For measurement purposes a beam of positive charged helium ions accelerated to an energy of about 80 keV has been used impinging onto target surfaces of lead implanted into silicon (PbSi), scandium implanted into aluminium (ScAl), aluminium foil (Al) and glassy carbon (C). First results show that it is possible to use the upgraded industrial implanter for medium energy ion scattering. The beam of 4 He 2+ with an energy up to 88 keV has been focussed to 1 mm in diameter. The 5 nA ion beam hit the samples under 2 x 10 -8 mbar. The results using the surface barrier detector show scattering events from the samples. Cooling of the detector to liquid nitrogen temperatures reduced the electronic noise in the backscattering spectrum close to zero. A

Extraction design and low energy beam transport optimization of space charge dominated multispecies ion beam sources

International Nuclear Information System (INIS)

Delferriere, O.; De Menezes, D.

2004-01-01

In all accelerator projects, the low energy part of the accelerator has to be carefully optimized to match the beam characteristic requirements of the higher energy parts. Since 1994 with the beginning of the Injector of Protons for High Intensity (IPHI) project and Source of Light Ions with High Intensities (SILHI) electron cyclotron resonance (ECR) ion source development at CEA/Saclay, we are using a set of two-dimensional (2D) codes for extraction system optimization (AXCEL, OPERA-2D) and beam transport (MULTIPART). The 95 keV SILHI extraction system optimization has largely increased the extracted current, and improved the beam line transmission. From these good results, a 130 mA D + extraction system for the International Fusion Material Irradiation Facility project has been designed in the same way as SILHI one. We are also now involved in the SPIRAL 2 project for the building of a 40 keV D + ECR ion source, continuously tunable from 0.1 to 5 mA, for which a special four-electrode extraction system has been studied. In this article we will describe the 2D design process and present the different extraction geometries and beam characteristics. Simulation results of SILHI H + beam emittance will be compared with experimental measurements

Room-Temperature Growth of SiC Thin Films by Dual-Ion-Beam Sputtering Deposition

Directory of Open Access Journals (Sweden)

C. G. Jin

2008-01-01

Full Text Available Silicon carbide (SiC films were prepared by single and dual-ion-beamsputtering deposition at room temperature. An assisted Ar+ ion beam (ion energy Ei = 150 eV was directed to bombard the substrate surface to be helpful for forming SiC films. The microstructure and optical properties of nonirradicated and assisted ion-beam irradicated films have been characterized by transmission electron microscopy (TEM, scanning electron microscopy (SEM, Fourier transform infrared spectroscopy (FTIR, and Raman spectra. TEM result shows that the films are amorphous. The films exposed to a low-energy assisted ion-beam irradicated during sputtering from a-SiC target have exhibited smoother and compacter surface topography than which deposited with nonirradicated. The ion-beam irradicated improves the adhesion between film and substrate and releases the stress between film and substrate. With assisted ion-beam irradicated, the density of the Si–C bond in the film has increased. At the same time, the excess C atoms or the size of the sp2 bonded clusters reduces, and the a-Si phase decreases. These results indicate that the composition of the film is mainly Si–C bond.

Effects of low and high energy ion bombardment on ETFE polymer

Science.gov (United States)

Minamisawa, R. A.; De Almeida, A.; Abidzina, V.; Parada, M. A.; Muntele, I.; Ila, D.

2007-04-01

The polymer ethylenetetrafluoroethylene (ETFE) is used as anti-adherent coatings for food packages and radiation dosimeters. In this work, we compare the damage induced in ETFE bombarded with 100 keV Si ions with that induced by 1 MeV proton bombardment. The damage depends on the type, energy and intensity of the irradiation. Irradiated films were analyzed with optical absorption photospectrometry, Raman spectroscopy and Fourier transform infrared (FTIR) spectroscopy to determine the chemical nature of the structural changes caused by ion irradiation. Computer simulations were performed to evaluate the radiation damage.

Future Perspectives for the Application of Low Temperature Detectors in Heavy Ion Physics

International Nuclear Information System (INIS)

Egelhof, P.; Kraft-Bermuth, S.

2009-01-01

Calorimetric low temperature detectors have the potential to become powerful tools for applications in many fields of heavy ion physics. A brief overview of heavy ion physics is given, and the next generation heavy ion facility FAIR is described with a special emphasis on the potential advantage of Low Temperature Detectors (LTDs) for applications in heavy ion physics. For prototype LTDs for the energy sensitive detection of heavy ions excellent results with respect to energy resolution down to δE/E = 1-2x10 -3 for a wide range of incident energies, and with respect to other detector properties, such as energy linearity with no indication of pulse height defects even for the heaviest ions, have been obtained. In addition, prototype detectors for hard X-rays have shown energy resolutions down to δE = 30-40eV at 60 keV. Consequently, both detector schemes have already been successfully used for first experiments. At present, the design and setup of large solid angle detector arrays is in progress. With the already achieved performance, LTDs promise a large potential for applications in atomic and nuclear heavy ion physics. A brief overview of prominent examples, including high-resolution nuclear spectroscopy, nuclear structure studies with radioactive beams, superheavy element research, as well as high-resolution atomic spectroscopy on highly charged ions and tests of QED in strong electromagnetic fields is presented.

Energy loss and charge exchange processes of high energy heavy ions channeled in crystals

International Nuclear Information System (INIS)

Poizat, J.C.; Andriamonje, S.; Anne, R.; Faria, N.V.d.C.; Chevallier, M.; Cohen, C.; Dural, J.; Farizon-Mazuy, B.; Gaillard, M.J.; Genre, R.; Hage-Ali, M.; Kirsch, R.; L'hoir, A.; Mory, J.; Moulin, J.; Quere, Y.; Remillieux, J.; Schmaus, D.; Toulemonde, M.

1990-01-01

The interaction of moving ions with single crystals is very sensitive to the orientation of the incident beam with respect to the crystalline directions of the target. Our experiments show that high energy heavy ion channeling deeply modifies their slowing down and charge exchange processes. This is due to the fact that channeled ions interact only with outershell target electrons, which means that the electron density they experience is very low and that the binding energy, and then the momentum distribution of these electrons, are quite different from the corresponding average values associated to random incidence. The two experimental studies presented here show the reduction of the energy loss rate for fast channeled heavy ions and illustrate the two aspects of channeling effects on charge exchange, the reduction of electron loss on one hand, and of electron capture on the other hand

Twin boundary-assisted lithium-ion transport

KAUST Repository

Nie, Anmin

2015-01-14

With the increased need for high-rate Li-ion batteries, it has become apparent that new electrode materials with enhanced Li-ion transport should be designed. Interfaces, such as twin boundaries (TBs), offer new opportunities to navigate the ionic transport within nanoscale materials. Here, we demonstrate the effects of TBs on the Li-ion transport properties in single crystalline SnO2 nanowires. It is shown that the TB-assisted lithiation pathways are remarkably different from the previously reported lithiation behavior in SnO2 nanowires without TBs. Our in situ transmission electron microscopy study combined with direct atomic-scale imaging of the initial lithiation stage of the TB-SnO2 nanowires prove that the lithium ions prefer to intercalate in the vicinity of the (101¯) TB, which acts as conduit for lithium-ion diffusion inside the nanowires. The density functional theory modeling shows that it is energetically preferred for lithium ions to accumulate near the TB compared to perfect neighboring lattice area. These findings may lead to the design of new electrode materials that incorporate TBs as efficient lithium pathways, and eventually, the development of next generation rechargeable batteries that surpass the rate performance of the current commercial Li-ion batteries.

Biomaterial imaging with MeV-energy heavy ion beams

Energy Technology Data Exchange (ETDEWEB)

Seki, Toshio, E-mail: seki@sakura.nucleng.kyoto-u.ac.jp [Department of Nuclear Engineering, Kyoto Univ., Uji, Kyoto 611-0011 (Japan); CREST, Japan Science and Technology Agency (JST), Chiyoda, Tokyo 102-0075 (Japan); Wakamatsu, Yoshinobu; Nakagawa, Shunichiro [Department of Nuclear Engineering, Kyoto Univ., Uji, Kyoto 611-0011 (Japan); Aoki, Takaaki [Department of Electronic Science and Engineering, Kyoto Univ., Nishikyo, Kyoto 615-8510 (Japan); CREST, Japan Science and Technology Agency (JST), Chiyoda, Tokyo 102-0075 (Japan); Ishihara, Akihiko [Laboratory of Cell Biology and Life Science, Graduate School of Human and Environmental Studies, Kyoto Univ., Sakyo, Kyoto 606-8501 (Japan); Matsuo, Jiro [Quantum Science and Engineering Center, Kyoto Univ., Uji, Kyoto 611-0011 (Japan); CREST, Japan Science and Technology Agency (JST), Chiyoda, Tokyo 102-0075 (Japan)

2014-08-01

The spatial distribution of several chemical compounds in biological tissues and cells can be obtained with mass spectrometry imaging (MSI). In conventional secondary ion mass spectrometry (SIMS) with keV-energy ion beams, elastic collisions occur between projectiles and atoms of constituent molecules. The collisions produce fragments, making the acquisition of molecular information difficult. In contrast, ion beams with MeV-energy excite near-surface electrons and enhance the ionization of high-mass molecules; hence, SIMS spectra of fragment-suppressed ionized molecules can be obtained with MeV-SIMS. To compare between MeV and conventional SIMS, we used the two methods based on MeV and Bi{sub 3}-keV ions, respectively, to obtain molecular images of rat cerebellum. Conventional SIMS images of m/z 184 were clearly observed, but with the Bi{sub 3} ion, the distribution of the molecule with m/z 772.5 could be observed with much difficulty. This effect was attributed to the low secondary ion yields and we could not get many signal counts with keV-energy beam. On the other hand, intact molecular ion distributions of lipids were clearly observed with MeV-SIMS, although the mass of all lipid molecules was higher than 500 Da. The peaks of intact molecular ions in MeV-SIMS spectra allowed us to assign the mass. The high secondary ion sensitivity with MeV-energy heavy ions is very useful in biomaterial analysis.

Biomaterial imaging with MeV-energy heavy ion beams

International Nuclear Information System (INIS)

Seki, Toshio; Wakamatsu, Yoshinobu; Nakagawa, Shunichiro; Aoki, Takaaki; Ishihara, Akihiko; Matsuo, Jiro

2014-01-01

The spatial distribution of several chemical compounds in biological tissues and cells can be obtained with mass spectrometry imaging (MSI). In conventional secondary ion mass spectrometry (SIMS) with keV-energy ion beams, elastic collisions occur between projectiles and atoms of constituent molecules. The collisions produce fragments, making the acquisition of molecular information difficult. In contrast, ion beams with MeV-energy excite near-surface electrons and enhance the ionization of high-mass molecules; hence, SIMS spectra of fragment-suppressed ionized molecules can be obtained with MeV-SIMS. To compare between MeV and conventional SIMS, we used the two methods based on MeV and Bi 3 -keV ions, respectively, to obtain molecular images of rat cerebellum. Conventional SIMS images of m/z 184 were clearly observed, but with the Bi 3 ion, the distribution of the molecule with m/z 772.5 could be observed with much difficulty. This effect was attributed to the low secondary ion yields and we could not get many signal counts with keV-energy beam. On the other hand, intact molecular ion distributions of lipids were clearly observed with MeV-SIMS, although the mass of all lipid molecules was higher than 500 Da. The peaks of intact molecular ions in MeV-SIMS spectra allowed us to assign the mass. The high secondary ion sensitivity with MeV-energy heavy ions is very useful in biomaterial analysis

Coincident Auger electron and recoil ion momentum spectroscopy for low-energy ion-atom collisions

International Nuclear Information System (INIS)

Laurent, G.; Tarisien, M.; Flechard, X.; Jardin, P.; Guillaume, L.; Sobocinski, P.; Adoui, L.; Bordenave-Montesquieu, A.; Bordenave-Montesquieu, D.; Chesnel, J.-Y.; Fremont, F.; Hennecart, D.; Lienard, E.; Maunoury, L.; Moretto-Capelle, P.; Cassimi, A.

2003-01-01

The recoil ion momentum spectroscopy (RIMS) method combined with the detection of Auger electrons has been used successfully to analyse double electron capture following O 6+ + He collisions at low impact velocities. Although RIMS and Auger spectroscopies are known to be efficient tools to obtain details on the primary processes occurring during the collision, the conjunction of both techniques provides new insights on the electron capture process. In the present experiment, triple coincidence detection of the scattered projectile, the target recoil ion and the Auger electron allows for a precise identification of the doubly excited states O 4+ (1s 2 nln ' l ' ) populated after double electron-capture events

Highly Compressed Ion Beams for High Energy Density Science

CERN Document Server

Friedman, Alex; Briggs, Richard J; Callahan, Debra; Caporaso, George; Celata, C M; Davidson, Ronald C; Faltens, Andy; Grant-Logan, B; Grisham, Larry; Grote, D P; Henestroza, Enrique; Kaganovich, Igor D; Lee, Edward; Lee, Richard; Leitner, Matthaeus; Nelson, Scott D; Olson, Craig; Penn, Gregory; Reginato, Lou; Renk, Tim; Rose, David; Sessler, Andrew M; Staples, John W; Tabak, Max; Thoma, Carsten H; Waldron, William; Welch, Dale; Wurtele, Jonathan; Yu, Simon

2005-01-01

The Heavy Ion Fusion Virtual National Laboratory (HIF-VNL) is developing the intense ion beams needed to drive matter to the High Energy Density (HED) regimes required for Inertial Fusion Energy (IFE) and other applications. An interim goal is a facility for Warm Dense Matter (WDM) studies, wherein a target is heated volumetrically without being shocked, so that well-defined states of matter at 1 to 10 eV are generated within a diagnosable region. In the approach we are pursuing, low to medium mass ions with energies just above the Bragg peak are directed onto thin target "foils," which may in fact be foams or "steel wool" with mean densities 1% to 100% of solid. This approach complements that being pursued at GSI, wherein high-energy ion beams deposit a small fraction of their energy in a cylindrical target. We present the requirements for warm dense matter experiments, and describe suitable accelerator concepts, including novel broadband traveling wave pulse-line, drift-tube linac, RF, and single-gap approa...

Development and testing of a three-stage double tandem accelerator-decelerator system for low energy, highly stripped ions. Progress report, March 1, 1978--February 28, 1979

International Nuclear Information System (INIS)

Bayfield, J.E.

1978-11-01

Three-stage operation of the University of Pittsburgh accel-decel double tandem source of highly stripped ion beams is described. The system has produced 0 5+ , 0 6+ , 0 7+ , and 0 8+ ions at specific energies as low as 15 keV per AMU. The design of the new decelerator tubes is discussed. The present performance and limitations of the overall system are outlined. Some new charge exchange cross sections have been measured, for combined higher ion charge states and lower ion energies than heretofore was possible. Future four-stage operation with very heavy ions is considered

New 2-stage ion microprobes and a move to higher energies

Energy Technology Data Exchange (ETDEWEB)

Legge, G.J.F.; Dymnikov, A.; Moloney, G.; Saint, A. [Melbourne Univ., Parkville, VIC (Australia). School of Physics; Cohen, D. [Australian Nuclear Science and Technology Organisation, Lucas Heights, NSW (Australia)

1996-12-31

Recent moves in Ion Beam Microanalysis towards the use of a rapidly growing number of very high resolution, low current and single ion techniques has led to the need for high demagnification and greatly improved beam quality. There is also a move to apply Microbeams at higher energies and with heavier ions. This also puts demands on the focusing system and beam control. This paper describes the recent development of 2-stage lens systems to be applied here and overseas, both at very high resolution and at high energies with heavy ions. It looks at new ion beam analysis applications of such ion microprobes. 8 refs., 1 tab., 1 fig.

New 2-stage ion microprobes and a move to higher energies

Energy Technology Data Exchange (ETDEWEB)

Legge, G J.F.; Dymnikov, A; Moloney, G; Saint, A [Melbourne Univ., Parkville, VIC (Australia). School of Physics; Cohen, D [Australian Nuclear Science and Technology Organisation, Lucas Heights, NSW (Australia)

1997-12-31

Recent moves in Ion Beam Microanalysis towards the use of a rapidly growing number of very high resolution, low current and single ion techniques has led to the need for high demagnification and greatly improved beam quality. There is also a move to apply Microbeams at higher energies and with heavier ions. This also puts demands on the focusing system and beam control. This paper describes the recent development of 2-stage lens systems to be applied here and overseas, both at very high resolution and at high energies with heavy ions. It looks at new ion beam analysis applications of such ion microprobes. 8 refs., 1 tab., 1 fig.

Lifetime obtained by ion beam assisted deposition

Energy Technology Data Exchange (ETDEWEB)

Chakaroun, M. [XLIM-MINACOM-UMR 6172, Faculte des Sciences et Techniques, 123 av. Albert Thomas, 87060 Limoges cedex (France); Antony, R. [XLIM-MINACOM-UMR 6172, Faculte des Sciences et Techniques, 123 av. Albert Thomas, 87060 Limoges cedex (France)], E-mail: remi.antony@unilim.fr; Taillepierre, P.; Moliton, A. [XLIM-MINACOM-UMR 6172, Faculte des Sciences et Techniques, 123 av. Albert Thomas, 87060 Limoges cedex (France)

2007-09-15

We have fabricated green organic light-emitting diodes based on tris-(8-hydroxyquinoline)aluminium (Alq3) thin films. In order to favor the charge carriers transport from the anode, we have deposited a N,N'-diphenyl-N,N'-bis (3-methylphenyl)-1,1'-diphenyl-4,4'-diamine (TPD) layer (hole transport layer) on a ITO anode. Cathode is obtained with a calcium layer covered with a silver layer. This silver layer is used to protect the other layers against oxygen during the OLED use. All the depositions are performed under vacuum and the devices are not exposed to air during their realisation. In order to improve the silver layer characteristics, we have realized this layer with the ion beam assisted deposition process. The aim of this process is to densify the layer and then reduce the permeation of H{sub 2}O and O{sub 2}. We have used argon ions to assist the silver deposition. All the OLEDs optoelectronic characterizations (I = f(V), L = f(V)) are performed in the ambient air. We compare the results obtained with the assisted layer with those obtained with a classical cathode realized by thermal unassisted evaporation. We have realized lifetime measurements in the ambient air and we discuss about the assisted layer influence on the OLEDs performances.

Modified Thomson spectrometer design for high energy, multi-species ion sources

International Nuclear Information System (INIS)

Gwynne, D.; Kar, S.; Doria, D.; Ahmed, H.; Hanton, F.; Cerchez, M.; Swantusch, M.; Willi, O.; Fernandez, J.; Gray, R. J.; MacLellan, D. A.; McKenna, P.; Green, J. S.; Neely, D.; Najmudin, Z.; Streeter, M.; Ruiz, J. A.; Schiavi, A.; Zepf, M.; Borghesi, M.

2014-01-01

A modification to the standard Thomson parabola spectrometer is discussed, which is designed to measure high energy (tens of MeV/nucleon), broad bandwidth spectra of multi-species ions accelerated by intense laser plasma interactions. It is proposed to implement a pair of extended, trapezoidal shaped electric plates, which will not only resolve ion traces at high energies, but will also retain the lower energy part of the spectrum. While a longer (along the axis of the undeflected ion beam direction) electric plate design provides effective charge state separation at the high energy end of the spectrum, the proposed new trapezoidal shape will enable the low energy ions to reach the detector, which would have been clipped or blocked by simply extending the rectangular plates to enhance the electrostatic deflection

Angular distributions of particles sputtered from polycrystalline platinum by low-energy ions

International Nuclear Information System (INIS)

Chernysh, V.S.; Eckstein, W.; Haidarov, A.A.; Kulikauskas, V.S.; Mashkova, E.S.; Molchanov, V.A.

2000-01-01

The results of an experimental study and a computer simulation with the TRIM.SP code of the angular distributions of atoms sputtered from polycrystalline platinum under 3-9 keV Ne + bombardment at normal ion incidence are presented. It was found that angular distributions of sputtered atoms are overcosine and that their shape is practically independent of an ion energy. Comparison with the previously obtained data for He + and Ar + ions have shown that the shape of the angular distribution does not depend on the bombarding ion species. Good agreement between experimental results and computer simulation data was found. Computer simulations of the partial angular distributions of Pt atoms ejected due to various sputtering mechanisms for Ne ion bombardment were performed and the comparison with corresponding data for He and Ar bombarding was made. The role of different mechanisms in the formation of angular distributions of sputtered atoms has been analyzed

Surface characterization by energy distribution measurements of secondary electrons and of ion-induced electrons

International Nuclear Information System (INIS)

Bauer, H.E.; Seiler, H.

1988-01-01

Instruments for surface microanalysis (e.g. scanning electron or ion microprobes, emission electron or ion microscopes) use the current of emitted secondary electrons or of emitted ion-induced electrons for imaging of the analysed surface. These currents, integrating over all energies of the emitted low energy electrons, are however, not well suited to surface analytical purposes. On the contrary, the energy distribution of these electrons is extremely surface-sensitive with respect to shape, size, width, most probable energy, and cut-off energy. The energy distribution measurements were performed with a cylindrical mirror analyser and converted into N(E), if necessary. Presented are energy spectra of electrons released by electrons and argon ions of some contaminated and sputter cleaned metals, the change of the secondary electron energy distribution from oxidized aluminium to clean aluminium, and the change of the cut-off energy due to work function change of oxidized aluminium, and of a silver layer on a platinum sample. The energy distribution of the secondary electrons often shows detailed structures, probably due to low-energy Auger electrons, and is broader than the energy distribution of ion-induced electrons of the same object point. (author)

Dependence of wavelength of Xe ion-induced rippled structures on the fluence in the medium ion energy range

Energy Technology Data Exchange (ETDEWEB)

Hanisch, Antje; Grenzer, Joerg [Institute of Ion Beam Physics and Materials Research, Dresden (Germany); Biermanns, Andreas; Pietsch, Ullrich [Institute of Physics, University of Siegen (Germany)

2010-07-01

Ion-beam eroded self-organized nanostructures on semiconductors offer new ways for the fabrication of high density memory and optoelectronic devices. It is known that wavelength and amplitude of noble gas ion-induced rippled structures tune with the ion energy and the fluence depending on the energy range, ion type and substrate. The linear theory by Makeev predicts a linear dependence of the ion energy on the wavelength for low temperatures. For Ar{sup +} and O{sub 2}{sup +} it was observed by different groups that the wavelength grows with increasing fluence after being constant up to an onset fluence and before saturation. In this coarsening regime power-law or exponential behavior of the wavelength with the fluence was monitored. So far, investigations for Xe ions on silicon surfaces mainly concentrated on energies below 1 keV. We found a linear dependence of both the ion energy and the fluence on the wavelength and amplitude of rippled structures over a wide range of the Xe{sup +} ion energy between 5 and 70 keV. Moreover, we estimated the ratio of wavelength to amplitude to be constant meaning a shape stability when a threshold fluence of 2.10{sup 17} cm{sup -2} was exceeded.

Binding energies of cluster ions

International Nuclear Information System (INIS)

Parajuli, R.; Matt, S.; Scheier, P.; Echt, O.; Stamatovic, A.; Maerk, T.D.

2002-01-01

The binding energy of charged clusters may be measured by analyzing the kinetic energy released in the metastable decay of mass selected parent ions. Using finite heat bath theory to determine the binding energies of argon, neon, krypton, oxygen and nitrogen from their respective average kinetic energy released were carried out. A high-resolution double focussing two-sector mass spectrometer of reversed Nier-Johnson type geometry was used. MIKE ( mass-analysed ion kinetic energy) were measured to investigate decay reactions of mass-selected ions. For the inert gases neon (Ne n + ), argon (Ar n + ) and krypton (Kr n + ), it is found that the binding energies initially decrease with increasing size n and then level off at a value above the enthalpy of vaporization of the condensed phase. Oxygen cluster ions shown a characteristic dependence on cluster size (U-shape) indicating a change in the metastable fragmentation mechanism when going from the dimer to the decamer ion. (nevyjel)

Amorphous Ge quantum dots embedded in SiO2 formed by low energy ion implantation

International Nuclear Information System (INIS)

Zhao, J. P.; Huang, D. X.; Jacobson, A. J.; Chen, Z. Y.; Makarenkov, B.; Chu, W. K.; Bahrim, B.; Rabalais, J. W.

2008-01-01

Under ultrahigh vacuum conditions, extremely small Ge nanodots embedded in SiO 2 , i.e., Ge-SiO 2 quantum dot composites, have been formed by ion implantation of 74 Ge + isotope into (0001) Z-cut quartz at a low kinetic energy of 9 keV using varying implantation temperatures. Transmission electron microscopy (TEM) images and micro-Raman scattering show that amorphous Ge nanodots are formed at all temperatures. The formation of amorphous Ge nanodots is different from reported crystalline Ge nanodot formation by high energy ion implantation followed by a necessary high temperature annealing process. At room temperature, a confined spatial distribution of the amorphous Ge nanodots can be obtained. Ge inward diffusion was found to be significantly enhanced by a synergetic effect of high implantation temperature and preferential sputtering of surface oxygen, which induced a much wider and deeper Ge nanodot distribution at elevated implantation temperature. The bimodal size distribution that is often observed in high energy implantation was not observed in the present study. Cross-sectional TEM observation and the depth profile of Ge atoms in SiO 2 obtained from x-ray photoelectron spectra revealed a critical Ge concentration for observable amorphous nanodot formation. The mechanism of formation of amorphous Ge nanodots and the change in spatial distribution with implantation temperature are discussed

The effect of carbon impurities on molybdenum surface morphology evolution under high-flux low-energy helium ion irradiation

International Nuclear Information System (INIS)

Tripathi, J.K.; Novakowski, T.J.; Gonderman, S.; Bharadwaj, N.; Hassanein, A.

2016-01-01

We report on the role of carbon (C) impurities, in molybdenum (Mo) fuzz evolutions on Mo surface during 100 eV He + ion irradiations. In this study we considered 0.01, 0.05, and 0.5% C + ion impurities in He + ion irradiations. For introducing such tiny C + ion impurities, gas mixtures of He and CH 4 have been chosen in following ratios; 99.95: 0.05, 99.75: 0.25, and 97.5: 2.5. Apart from these three cases, two additional cases, 100% He + ion (for Mo fuzz growth due to only He + ions) and 100% H + ion (for confirming the significance of tiny 0.04–2.0% H + ions in terms of Mo fuzz evolutions on Mo surface, if any), have also been considered. Ion energy (100 eV), ion fluence (2.6 × 10 24  ions m −2 ), and target temperature (923 K) were kept constant for each experiment and their selections were based on our previous studies [1,2]. Our study shows homogeneously populated and highly dense Mo fuzz evolutions on entire Mo surface for 100% He + ion irradiation case. Enhancement of C + ion impurities in He + ions causes a sequential reduction in Mo fuzz evolutions, leading to almost complete prevention of Mo fuzz evolutions for 0.5% C + ion impurity concentrations. Additionally, no fuzz formation for 100% H + ion irradiation at all, were seen (apart from some tiny nano-structuring, in very limited regions). This indicates that there is no significant role of H + ions in Mo fuzz evolutions (at least for such tiny amount, 0.04–2.0% H + ions). The study is significant to understand the behavior of potential high-Z plasma facing components (PFCs), in the, presence of tiny amount of C impurities, for nuclear fusion relevant applications. - Highlights: • Mo Fuzz evolutions due to low-energy high-flux 100% He + ion irradiation. • Sequential reduction in Mo fuzz evolutions with increasing C + ion impurities in He + ions. • Almost complete prevention of Mo fuzz evolutions for 0.5% C + ion impurity in He + ions. • No Mo fuzz formation for 100% H + ion

Ion-ion interaction and energy transfer of 4+ transuranium ions in cerium tetrafluoride

International Nuclear Information System (INIS)

Liu, G.K.; Beitz, J.V.

1990-01-01

Dynamics of excited 5f electron states of the transuranium ions Cm 4+ and Bk 4+ in CeF 4 are compared. Based on time- and wavelength-resolved laser-induced fluorescence, excitation energy transfer processes have been probed. Depending on concentration and electronic energy level structure of the studied 4+ transuranium ion, the dominant energy transfer mechanisms were identified as cross relaxation, exciton-exciton annihilation, and trapping. Energy transfer rates derived from the fitting of the observed fluorescence decays to theoretical models, based on electric multipolar ion-ion interactions, are contrasted with prior studies of 4f states of 3+ lanthanide and 3d states of transition metal ions. 16 refs., 1 tab

Low - energy Accelerator - based Nuclear Biotechnology for Applications in Agriculture and Biomedicine

International Nuclear Information System (INIS)

Yu, L.D.; Anuntalabhochai, S.; Phanchaisri, B.; Wongkham, W.; Vilaithong, T.

2014-01-01

A novel biotechnology based on low-energy-accelerator nuclear technology has recently been rapidly developed internationally. Low-energy ion beams with energy in a range of 10-100 keV generated from ion accelerators bombard plant seeds or tissues for mutation induction and plant or mammalian cells for gene transfection induction to benefit to agriculture and biomedicine. In Thailand, centered at Chiang Mai University, this so-called low-energy ion beam biotechnology has been explored and developed for more than a decade. Bioengineering-specialized ion implanters have been constructed and utilized for both research and applications. Certain Thai local rice mutants have been induced and achieved with improved characters of dwarf, photo-insensitivity, enriched nutrients and higher yields. Mutants of other plants such as flowers, vegetables and microorganisms have also been induced with improved properties. DNA transfer into bacterial and mammalian cells has been induced by ion beams. Particularly, ion-beam-induced gene transfection into human cells succeeded to initiate a new non-viral gene transfection method for potential gene therapy.

Coincident Auger electron and recoil ion momentum spectroscopy for low-energy ion-atom collisions

Energy Technology Data Exchange (ETDEWEB)

Laurent, G. E-mail: glaurent@ganil.fr; Tarisien, M.; Flechard, X.; Jardin, P.; Guillaume, L.; Sobocinski, P.; Adoui, L.; Bordenave-Montesquieu, A.; Bordenave-Montesquieu, D.; Chesnel, J.-Y.; Fremont, F.; Hennecart, D.; Lienard, E.; Maunoury, L.; Moretto-Capelle, P.; Cassimi, A

2003-05-01

The recoil ion momentum spectroscopy (RIMS) method combined with the detection of Auger electrons has been used successfully to analyse double electron capture following O{sup 6+} + He collisions at low impact velocities. Although RIMS and Auger spectroscopies are known to be efficient tools to obtain details on the primary processes occurring during the collision, the conjunction of both techniques provides new insights on the electron capture process. In the present experiment, triple coincidence detection of the scattered projectile, the target recoil ion and the Auger electron allows for a precise identification of the doubly excited states O{sup 4+} (1s{sup 2}nln{sup '}l{sup '}) populated after double electron-capture events.

Low temperature magnetron sputter deposition of polycrystalline silicon thin films using high flux ion bombardment

International Nuclear Information System (INIS)

Gerbi, Jennifer E.; Abelson, John R.

2007-01-01

We demonstrate that the microstructure of polycrystalline silicon thin films depends strongly on the flux of low energy ions that bombard the growth surface during magnetron sputter deposition. The deposition system is equipped with external electromagnetic coils which, through the unbalanced magnetron effect, provide direct control of the ion flux independent of the ion energy. We report the influence of low energy ( + on the low temperature ( + ions to silicon neutrals (J + /J 0 ) during growth by an order of magnitude (from 3 to 30) enables the direct nucleation of polycrystalline Si on glass and SiO 2 coated Si at temperatures below 400 degree sign C. We discuss possible mechanisms for this enhancement of crystalline microstructure, including the roles of enhanced adatom mobility and the formation of shallow, mobile defects

Low-temperature photoluminescence in chalcogenide glasses doped with rare-earth ions

Energy Technology Data Exchange (ETDEWEB)

Kostka, Petr, E-mail: petr.kostka@irsm.cas.cz [Institute of Rock Structure and Mechanics AS CR, V Holešovičkách 41, 182 09 Praha 8 (Czech Republic); Zavadil, Jiří [Institute of Photonics and Electronics AS CR, Chaberská 57, 182 51 Praha 8, Kobylisy (Czech Republic); Iovu, Mihail S. [Institute of Applied Physics, Academy of Sciences of Moldova, Str. Academiei 5, MD-28 Chisinau, Republic of Moldova (Moldova, Republic of); Ivanova, Zoya G. [Institute of Solid State Physics, Bulgarian Academy of Sciences, 1784 Sofia (Bulgaria); Furniss, David; Seddon, Angela B. [Mid-Infrared Photonics Group, George Green Institute for Electromagnetics Research, University of Nottingham, University Park, Nottingham NG7 2RD (United Kingdom)

2015-11-05

Sulfide and oxysulfide bulk glasses Ga-La-S-O, Ge-Ga-S and Ge-Ga-As-S doped, or co-doped, with various rare-earth (RE{sup 3+}) ions are investigated for their room temperature transmission and low-temperature photoluminescence. Photoluminescence spectra are collected by using external excitation into the Urbach tail of the fundamental absorption edge of the host-glass. The low-temperature photoluminescence spectra are dominated by the broad-band luminescence of the host glass, with superimposed relatively sharp emission bands due to radiative transitions within 4f shells of RE{sup 3+} ions. In addition, the dips in the host-glass luminescence due to 4f-4f up-transitions of RE{sup 3+} ions are observed in the Ge-Ga-S and Ge-Ga-As-S systems. These superimposed narrow effects provide a direct experimental evidence of energy transfer between the host glass and respective RE{sup 3+} dopants. - Highlights: • An evidence of energy transfer from host-glass to doped-in RE ions is presented. • Energy transfer is manifested by dips in host-glass broad-band luminescence. • This channel of energy transfer is documented on selected RE doped sulfide glasses. • Photoluminescence spectra are dominated by broad band host-glass luminescence. • Presence of RE ions is manifested by superimposed narrow 4f-4f transitions.

Nitriding of AISI 4140 steel by a low energy broad ion source

International Nuclear Information System (INIS)

Ochoa, E. A.; Figueroa, C. A.; Alvarez, F.

2006-01-01

A comprehensive study of the thermochemical nitriding process of steel AISI 4140 by low energy ion implantation (Kaufmann cell) is reported. Different times of implantation were employed and the studied samples were characterized by x-ray diffraction, in situ photoemission electron spectroscopy, scanning electron microscopy, and hardness (nanoindentation) measurements. The linear relationship between nitrogen content and hardness was verified. The structure of the nitrided layer was characterized yielding that the compound layer is formed by coarse precipitates, around small grains, constituted principally by ε-Fe 2-3 N and γ-Fe 4 N phases and the diffusion zone is formed by fine precipitates, around big grains of the original martensitic phase, constituted principally by γ-Fe 4 N phase. Finally, a diffusion model for multiphase systems was applied to determine effective diffusion coefficients of nitrogen in the different phases

Magnetic fusion with high energy self-colliding ion beams

International Nuclear Information System (INIS)

Restoker, N.; Wessel, F.; Maglich, B.; Fisher, A.

1993-01-01

Field-reversed configurations of energetic large orbit ions with neutralizing electrons have been proposed as the basis of a fusion reactor. Vlasov equilibria consisting of a ring or an annulus have been investigated. A stability analysis has been carried out for a long thin layer of energetic ions in a low density background plasma. There is a growing body of experimental evidence from tokamaks that energetic ions slow down and diffuse in accordance with classical theory in the presence of large non-thermal fluctuations and anomalous transport of low energy (10 keV) ions. Provided that major instabilities are under control, it seems likely that the design of a reactor featuring energetic self-colliding ion beams can be based on classical theory. In this case a confinement system that is much better than a tokamak is possible. Several methods are described for creating field reversed configurations with intense neutralized ion beams

Magnetic fusion with high energy self-colliding ion beams

International Nuclear Information System (INIS)

Rostoker, N.; Wessel, F.; Maglich, B.; Fisher, A.

1992-06-01

Field-reversed configurations of energetic large orbit ions with neutralizing electrons have been proposed as the basis of a fusion reactor. Vlasov equilibria consisting of a ring or an annulus have been investigated. A stability analysis has been carried out for a long thin layer of energetic ions in a low density background plasma. There is a growing body of experimental evidence from tokamaks that energetic ions slow down and diffuse in accordance with classical theory in the presence of large non-thermal fluctuations and anomalous transport of low energy (10 keV) ions. Provided that major instabilities are under control, it seems likely that the design of a reactor featuring energetic self-colliding ion beams can be based on classical theory. In this case a confinement system that is much better than a tokamak is possible. Several methods are described for creating field reversed configurations with intense neutralized ion beams

Temperature-dependent surface porosity of Nb{sub 2}O{sub 5} under high-flux, low-energy He{sup +} ion irradiation

Energy Technology Data Exchange (ETDEWEB)

Novakowski, T.J., E-mail: tnovakow@purdue.edu; Tripathi, J.K.; Hosinski, G.M.; Joseph, G.; Hassanein, A.

2016-01-30

Graphical abstract: - Highlights: • Nb{sub 2}O{sub 5} surfaces are nanostructured with a novel He{sup +} ion irradiation process. • High-flux, low energy He{sup +} ion irradiation generates highly porous surfaces. • Top-down approach guarantees good contact between different crystallites. • Sample annealing demonstrates temperature effect on surface morphology. • Surface pore diameter increases with increasing temperature. - Abstract: The present study reports on high-flux, low-energy He{sup +} ion irradiation as a novel method of enhancing the surface porosity and surface area of naturally oxidized niobium (Nb). Our study shows that ion-irradiation-induced Nb surface micro- and nano-structures are highly tunable by varying the target temperature during ion bombardment. Mirror-polished Nb samples were irradiated with 100 eV He{sup +} ions at a flux of 1.2 × 10{sup 21} ions m{sup −2} s{sup −1} to a total fluence of 4.3 × 10{sup 24} ions m{sup −2} with simultaneous sample annealing in the temperature range of 773–1223 K to demonstrate the influence of sample temperature on the resulting Nb surface morphology. This surface morphology was primarily characterized using field-emission scanning electron microscopy (FE-SEM) and atomic force microscopy (AFM). Below 923 K, Nb surfaces form nano-scale tendrils and exhibit significant increases in surface porosity. Above 923 K, homogeneously populated nano-pores with an average diameter of ∼60 nm are observed in addition to a smaller population of sub-micron sized pores (up to ∼230 nm in diameter). Our analysis shows a significant reduction in surface pore number density and surface porosity with increasing sample temperature. High-resolution ex situ X-ray photoelectron spectroscopy (XPS) shows Nb{sub 2}O{sub 5} phase in all of the ion-irradiated samples. To further demonstrate the length scales in which radiation-induced surface roughening occurs, optical reflectivity was performed over a spectrum of

Low-altitude ion heating with downflowing and upflowing ions

Science.gov (United States)

Shen, Y.; Knudsen, D. J.; Burchill, J. K.; Howarth, A. D.; Yau, A. W.; James, G.; Miles, D.; Cogger, L. L.; Perry, G. W.

2017-12-01

Mechanisms that energize ions at the initial stage of ion upflow are still not well understood. We statistically investigate ionospheric ion energization and field-aligned motion at very low altitudes (330-730 km) using simultaneous plasma, magnetic field, wave electric field and optical data from the e-POP satellite. The high-time-resolution (10 ms) dataset enables us to study the micro-structures of ion heating and field-aligned ion motion. The ion temperature and field-aligned bulk flow velocity are derived from 2-D ion distribution functions measured by the SEI instrument. From March 2015 to March 2016, we've found 17 orbits (in total 24 ion heating periods) with clear ion heating signatures passing across the dayside cleft or the nightside auroral regions. Most of these events have consistent ion heating and flow velocity characteristics observed from both the SEI and IRM instruments. The perpendicular ion temperature goes up to 4.5 eV within a 2 km-wide region in some cases, in which the Radio Receiver Instrument (RRI) sees broadband extremely low frequency (BBELF) waves, demonstrating significant wave-ion heating down to as low as 350 km. The e-POP Fast Auroral Imager (FAI) and Magnetic Field (MGF) instruments show that many events are associated with active aurora and are within downward current regions. Contrary to what would be expected from mirror-force acceleration of heated ions, the majority of these heating events (17 out of 24) are associated with the core ion downflow rather than upflow. These statistical results provide us with new sights into ion heating and field-aligned flow processes at very low altitudes.

Kinetic energy distributions of ions after surface collisions

International Nuclear Information System (INIS)

Short, R.T.; Todd, P.J.; Grimm, C.C.

1991-01-01

As a part of the development of an organic ion microprobe, to be used for imaging of particular organic compounds in biological tissue, various methods of quadrupole-based tandem mass spectroscopy (MS/MS) have been investigated. High transmission efficiency is essential for the success of the organic ion microprobe, due to expected low analyte concentrations in biological tissue and the potential for sample damage from prolonged exposure to the primary ion beam. MS/MS is necessary for organic ion imaging because of the complex nature of the biological matrices. The goal of these studies of was to optimize the efficiency of daughter ion production and transmission by first determining daughter ion properties and then designing ion optics based on those properties. The properties of main interest are daughter ion kinetic energy and angular distribution. 1 fig

Large area smoothing of surfaces by ion bombardment: fundamentals and applications

International Nuclear Information System (INIS)

Frost, F; Fechner, R; Ziberi, B; Voellner, J; Flamm, D; Schindler, A

2009-01-01

Ion beam erosion can be used as a process for achieving surface smoothing at microscopic length scales and for the preparation of ultrasmooth surfaces, as an alternative to nanostructuring of various surfaces via self-organization. This requires that in the evolution of the surface topography different relaxation mechanisms dominate over the roughening, and smoothing of initially rough surfaces can occur. This contribution focuses on the basic mechanisms as well as potential applications of surface smoothing using low energy ion beams. In the first part, the fundamentals for the smoothing of III/V semiconductors, Si and quartz glass surfaces using low energy ion beams (ion energy: ≤2000 eV) are reviewed using examples. The topography evolution of these surfaces with respect to different process parameters (ion energy, ion incidence angle, erosion time, sample rotation) has been investigated. On the basis of the time evolution of different roughness parameters, the relevant surface relaxation mechanisms responsible for surface smoothing are discussed. In this context, physical constraints as regards the effectiveness of surface smoothing by direct ion bombardment will also be addressed and furthermore ion beam assisted smoothing techniques are introduced. In the second application-orientated part, recent technological developments related to ion beam assisted smoothing of optically relevant surfaces are summarized. It will be demonstrated that smoothing by direct ion bombardment in combination with the use of sacrificial smoothing layers and the utilization of appropriate broad beam ion sources enables the polishing of various technologically important surfaces down to 0.1 nm root mean square roughness level, showing great promise for large area surface processing. Specific examples are given for ion beam smoothing of different optical surfaces, especially for substrates used for advanced optical applications (e.g., in x-ray optics and components for extreme

The use of low energy, ion induced nuclear reactions for proton radiotherapy applications

International Nuclear Information System (INIS)

Horn, K.M.; Doyle, B.; Segal, M.N.; Adler, R.J.; Glatstein, E.

1995-01-01

Medical radiotherapy has traditionally relied upon the use of external photon beams and internally implanted radioisotopes as the chief means of irradiating tumors. However, advances in accelerator technology and the exploitation of novel means of producing radiation may provide useful alternatives to some current modes of medical radiation delivery with reduced total dose to surrounding healthy tissue, reduced expense, or increased treatment accessibility. This paper will briefly overview currently established modes of radiation therapy, techniques still considered experimental but in clinical use, innovative concepts under study that may enable new forms of treatment or enhance existing ones. The potential role of low energy, ion-induced nuclear reactions in radiotherapy applications is examined specifically for the 650 keV d( 3 He,p) 4 He nuclear reaction. This examination will describe the basic physics associated with this reaction's production of 17.4 MeV protons and the processes used to fabricate the necessary materials used in the technique. Calculations of the delivered radiation dose, heat generation, and required exposure times are presented. Experimental data are also presented validating the dose calculations. The design of small, lower cost ion accelerators, as embodied in 'nested'-tandem and radio frequency quadrupole accelerators is examined, as is the potential use of high-output 3 He and deuterium ion sources. Finally, potential clinical applications are discussed in terms of the advantages and disadvantages of this technique with respect to current radiotherapy methods and equipment

The use of low energy, ion induced nuclear reactions for proton radiotherapy applications

Science.gov (United States)

Horn, K. M.; Doyle, B.; Segal, M. N.; Hamm, R. W.; Adler, R. J.; Glatstein, E.

1995-12-01

Medical radiotherapy has traditionally relied upon the use of external photon beams and internally implanted radioisotopes as the chief means of irradiating tumors. However, advances in accelerator technology and the exploitation of novel means of producing radiation may provide useful alternatives to some current modes of medical radiation delivery — with reduced total dose to surrounding healthy tissue, reduced expense, or increased treatment accessibility. This paper will briefly overview currently established modes of radiation therapy, techniques still considered experimental but in clinical use and innovative concepts under study that may enable new forms of treatment or enhance existing ones. The potential role of low energy, ion-induced nuclear reactions in radiotherapy applications is examined specifically for the 650 keV d( 3He,p) 4 He nuclear reaction. This examination will describe the basic physics associated with this reaction's production of 17.4 MeV protons and the processes used to fabricate the necessary materials used in the technique. Calculations of the delivered radiation dose, heat generation, and required exposure times are presented. Experimental data is also presented validating the dose calculations. The design of small, lower cost ion accelerators, as embodied in "nested"-tandem and radio frequency quadrupole accelerators is examined, as is the potential use of high-output 3He and deuterium ion sources. Finally, potential clinical applications are discussed in terms of the advantages and disadvantages of this technique with respect to current radiotherapy methods and equipment.

Energetic identification of ions of very low fluence

International Nuclear Information System (INIS)

Mut C, D.A.; Balcazar, M.

2005-01-01

The calibration of 2 types of plastics is presented (cellulose nitrate and polycarbonate) that detect and identify the energy of helium slight ions (1.5 to 10 MeV) and protons (0.3 to 6 MeV) in flows so low of a single particle /cm 2 . This methodology is of importance in radiological protection to identify the actinides 232 Th, 241 Am, 238 U, 235 U, 237 Np by means of its alpha emissions, or to carry out neutron spectroscopy in an ignored energy field by protons retrocession. The ion identification is adjusted for all the cases to a simple expression of the exponential type. The comparison is achieved among detection efficiencies for the detectors. (Author)