WorldWideScience

Sample records for line thin metal

  1. Thin layer activation : on-line monitoring of metal loss in process plant

    International Nuclear Information System (INIS)

    Boulton, L.H.; Wallace, G.

    1993-01-01

    Corrosion, erosion and wear of metals is a common cause of failure in some process plant and equipment. Monitoring of these destructive effects has been done for many years to help plant engineers minimise the damage, in order to avoid unexpected failures and unscheduled shutdowns. Traditional methods of monitoring, such as standard NDT techniques, inform the engineer of what has happened, providing data such as culmulative loss of wall thickness. The modern approach to monitoring however, is to employ a technique which gives both current loss rates as well as integrated losses. Thin Layer Activation (TLA) provides on-line monitoring of corrosion, erosion and wear of metals, to a high degree of accuracy. It also gives cumulative information which can be backed up with weight-loss results if required. Thus current rather than historical loss rates are measured before any significant loss of metal has occurred. (author). 14 refs., 2 figs

  2. Formation of extremely narrow metallic lines

    International Nuclear Information System (INIS)

    Harris, E.P.; Keyes, R.W.

    1979-01-01

    A method for forming metal lines, particularly lines which are superconductive, involves delineating a pattern on a thin metal film on a substrate by masking techniques, ion implanting the metal film to a desired depth, removing the mask and etching away the unimplanted portion of the metal film to leave the line whose width is equal to the implanted depth. (U.K.)

  3. Thin films of mixed metal compounds

    Science.gov (United States)

    Mickelsen, Reid A.; Chen, Wen S.

    1985-01-01

    A compositionally uniform thin film of a mixed metal compound is formed by simultaneously evaporating a first metal compound and a second metal compound from independent sources. The mean free path between the vapor particles is reduced by a gas and the mixed vapors are deposited uniformly. The invention finds particular utility in forming thin film heterojunction solar cells.

  4. Thin films of metal-organic compounds and metal nanoparticle

    Indian Academy of Sciences (India)

    Thin films of metal-organic compounds and metal nanoparticle-embedded polymers for nonlinear optical applications. S Philip Anthony Shatabdi Porel D ... Thin films based on two very different metal-organic systems are developed and some nonlinear optical applications are explored. A family of zinc complexes which ...

  5. Thin film metal-oxides

    CERN Document Server

    Ramanathan, Shriram

    2009-01-01

    Presents an account of the fundamental structure-property relations in oxide thin films. This title discusses the functional properties of thin film oxides in the context of applications in the electronics and renewable energy technologies.

  6. Bauschinger effect in thin metal films on compliant substrates

    NARCIS (Netherlands)

    Hoefnagels, J.P.M.; Vlassak, J.J.; Gdoutos, E.E.

    2007-01-01

    Flexible electronic devices such as flexible displays and solar cells draw more and more attention from the industry. In these devices, the functionality is delivered by small-scale structures consisting of thin metal lines and other materials that are integrated on a compliant (e.g. polymer)

  7. Method for casting thin metal objects

    Science.gov (United States)

    Pehrson, Brandon P; Moore, Alan F

    2015-04-14

    Provided herein are various embodiments of systems for casting thin metal plates and sheets. Typical embodiments include layers of mold cavities that are oriented vertically for casting the metal plates. In some embodiments, the mold cavities include a beveled edge such that the plates that are cast have a beveled edge. In some embodiments, the mold cavities are filled with a molten metal through an open horizontal edge of the cavity. In some embodiments, the mold cavities are filled through one or more vertical feed orifices. Further disclosed are methods for forming a thin cast metal plate or sheet where the thickness of the cast part is in a range from 0.005 inches to 0.2 inches, and the surface area of the cast part is in a range from 16 square inches to 144 square inches.

  8. Impedance matched thin metamaterials make metals absorbing.

    Science.gov (United States)

    Mattiucci, N; Bloemer, M J; Aközbek, N; D'Aguanno, G

    2013-11-13

    Metals are generally considered good reflectors over the entire electromagnetic spectrum up to their plasma frequency. Here we demonstrate an approach to tailor their absorbing characteristics based on the effective metamaterial properties of thin, periodic metallo-dielectric multilayers by exploiting a broadband, inherently non-resonant, surface impedance matching mechanism. Based on this mechanism, we design, fabricate and test omnidirectional, thin ( 99%) over a frequency range spanning from the UV to the IR. Our approach opens new venues to design cost effective materials for many applications such as thermo-photovoltaic energy conversion devices, light harvesting for solar cells, flat panel display, infrared detectors, stray light reduction, stealth and others.

  9. Thin films of metal-organic compounds and metal nanoparticle ...

    Indian Academy of Sciences (India)

    Optical limiting capability of the nanoparticle-embedded polymer film is demonstrated. Keywords. Polar crystal; uniaxial orientational order; thin film; second harmonic gen- eration; silver ... able content of metal nanoparticles would be of considerable value from an appli- ... polar chain and perpendicular to it [10].

  10. Thin metal electrodes for semitransparent organic photovoltaics

    KAUST Repository

    Lee, Kyusung

    2013-08-01

    We demonstrate semitransparent organic photovoltaics (OPVs) based on thin metal electrodes and polymer photoactive layers consisting of poly(3-hexylthiophene) and [6,6]-phenyl C61 butyric acid methyl ester. The power conversion efficiency of a semitransparent OPV device comprising a 15-nm silver (Ag) rear electrode is 1.98% under AM 1.5-G illumination through the indium-tin-oxide side of the front anode at 100 mW/cm2 with 15.6% average transmittance of the entire cell in the visible wavelength range. As its thickness increases, a thin Ag electrode mainly influences the enhancement of the short circuit current density and fill factor. Its relatively low absorption intensity makes a Ag thin film a viable option for semitransparent electrodes compatible with organic layers. © 2013 ETRI.

  11. Ultrahigh stability of atomically thin metallic glasses

    Energy Technology Data Exchange (ETDEWEB)

    Cao, C. R.; Huang, K. Q.; Zhao, N. J.; Sun, Y. T.; Bai, H. Y.; Gu, L., E-mail: l.gu@iphy.ac.cn, E-mail: dzheng@iphy.ac.cn, E-mail: whw@iphy.ac.cn; Zheng, D. N., E-mail: l.gu@iphy.ac.cn, E-mail: dzheng@iphy.ac.cn, E-mail: whw@iphy.ac.cn; Wang, W. H., E-mail: l.gu@iphy.ac.cn, E-mail: dzheng@iphy.ac.cn, E-mail: whw@iphy.ac.cn [Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China)

    2014-07-07

    We report the fabrication and study of thermal stability of atomically thin ZrCu-based metallic glass films. The ultrathin films exhibit striking dynamic properties, ultrahigh thermal stability, and unique crystallization behavior with discrete crystalline nanoparticles sizes. The mechanisms for the remarkable high stability and crystallization behaviors are attributed to the dewetting process of the ultrathin film. We demonstrated a promising avenue for understanding some fundamental issues such as glassy structure, crystallization, deformation, and glass formation through atomic resolution imaging of the two dimensional like metallic glasses.

  12. Fusion welding of thin metal foils

    International Nuclear Information System (INIS)

    Casey, H.

    1975-01-01

    Aspects of fusion welding of thin metal foils are reviewed and the current techniques employed at LASL to join foils are described. Techniques for fusion welding approximately 0.025-mm-thick foils of copper, aluminum, and stainless steels have been developed using both electron beam and laser welding equipment. These techniques, together with the related aspects of joint design, tooling and fixturing, joint preparation, and modifications to the commercially available welding equipment, are included in the review. (auth)

  13. Density functional study of ferromagnetism in alkali metal thin films

    Indian Academy of Sciences (India)

    thickness uniform jellium model (UJM), and it is argued that within LSDA or GGA, alkali metal thin films cannot be claimed to have an FM ground state. Relevance of these results to the experiments on transition metal-doped alkali metal thin films ...

  14. A library of atomically thin metal chalcogenides.

    Science.gov (United States)

    Zhou, Jiadong; Lin, Junhao; Huang, Xiangwei; Zhou, Yao; Chen, Yu; Xia, Juan; Wang, Hong; Xie, Yu; Yu, Huimei; Lei, Jincheng; Wu, Di; Liu, Fucai; Fu, Qundong; Zeng, Qingsheng; Hsu, Chuang-Han; Yang, Changli; Lu, Li; Yu, Ting; Shen, Zexiang; Lin, Hsin; Yakobson, Boris I; Liu, Qian; Suenaga, Kazu; Liu, Guangtong; Liu, Zheng

    2018-04-01

    Investigations of two-dimensional transition-metal chalcogenides (TMCs) have recently revealed interesting physical phenomena, including the quantum spin Hall effect 1,2 , valley polarization 3,4 and two-dimensional superconductivity 5 , suggesting potential applications for functional devices 6-10 . However, of the numerous compounds available, only a handful, such as Mo- and W-based TMCs, have been synthesized, typically via sulfurization 11-15 , selenization 16,17 and tellurization 18 of metals and metal compounds. Many TMCs are difficult to produce because of the high melting points of their metal and metal oxide precursors. Molten-salt-assisted methods have been used to produce ceramic powders at relatively low temperature 19 and this approach 20 was recently employed to facilitate the growth of monolayer WS 2 and WSe 2 . Here we demonstrate that molten-salt-assisted chemical vapour deposition can be broadly applied for the synthesis of a wide variety of two-dimensional (atomically thin) TMCs. We synthesized 47 compounds, including 32 binary compounds (based on the transition metals Ti, Zr, Hf, V, Nb, Ta, Mo, W, Re, Pt, Pd and Fe), 13 alloys (including 11 ternary, one quaternary and one quinary), and two heterostructured compounds. We elaborate how the salt decreases the melting point of the reactants and facilitates the formation of intermediate products, increasing the overall reaction rate. Most of the synthesized materials in our library are useful, as supported by evidence of superconductivity in our monolayer NbSe 2 and MoTe 2 samples 21,22 and of high mobilities in MoS 2 and ReS 2 . Although the quality of some of the materials still requires development, our work opens up opportunities for studying the properties and potential application of a wide variety of two-dimensional TMCs.

  15. Electrical resistivity of thin metal films

    CERN Document Server

    Wissmann, Peter

    2007-01-01

    The aim of the book is to give an actual survey on the resistivity of thin metal and semiconductor films interacting with gases. We discuss the influence of the substrate material and the annealing treatment of the films, presenting our experimental data as well as theoretical models to calculate the scattering cross section of the conduction electrons in the frame-work of the scattering hypothesis. Main emphasis is laid on the comparison of gold and silver films which exhibit nearly the same lattice structure but differ in their chemical activity. In conclusion, the most important quantity for the interpretation is the surface charging z while the correlation with the optical data or the frustrated IR vibrations seems the show a more material-specific character. Z can be calculated on the basis of the density functional formalism or the self-consistent field approximation using Mulliken’s population analysis.

  16. Surface Plasmon Waves on Thin Metal Films.

    Science.gov (United States)

    Craig, Alan Ellsworth

    Surface-plasmon polaritons propagating on thin metal films bounded by dielectrics of nearly equal refractive indexes comprise two bound modes. Calculations indicate that, while the modes are degenerate on thick films, both the real and the imaginary components of the propagation constants for the modes split into two branches on successively thinner films. Considering these non-degenerate modes, the mode exhibiting a symmetric (antisymmetric) transverse profile of the longitudinally polarized electric field component, has propagation constant components both of which increase (decrease) with decreasing film thickness. Theoretical propagation constant eigenvalue (PCE) curves have been plotted which delineate this dependence of both propagation constant components on film thickness. By means of a retroreflecting, hemispherical glass coupler in an attenuated total reflection (ATR) configuration, light of wavelength 632.8 nm coupled to the modes of thin silver films deposited on polished glass substrates. Lorentzian lineshape dips in the plots of reflectance vs. angle of incidence indicate the presence of the plasmon modes. The real and imaginary components of the propagation constraints (i.e., the propagation constant and loss coefficient) were calculated from the angular positions and widths of the ATR resonances recorded. Films of several thicknesses were probed. Results which support the theoretically predicted curves were reported.

  17. 33 CFR 183.562 - Metallic fuel lines.

    Science.gov (United States)

    2010-07-01

    ...) BOATING SAFETY BOATS AND ASSOCIATED EQUIPMENT Fuel Systems Manufacturer Requirements § 183.562 Metallic fuel lines. (a) Each metallic fuel line that is mounted to the boat structure must be connected to the engine by a flexible fuel line. (b) Each metallic fuel line must be attached to the boat's structure...

  18. Theoretical investigation of the thermodynamic properties of metallic thin films

    International Nuclear Information System (INIS)

    Hung, Vu Van; Phuong, Duong Dai; Hoa, Nguyen Thi; Hieu, Ho Khac

    2015-01-01

    The thermodynamic properties of metallic thin films with face-centered cubic structure at ambient conditions were investigated using the statistical moment method including the anharmonicity effects of thermal lattice vibrations. The analytical expressions of Helmholtz free energy, lattice parameter, linear thermal expansion coefficient, specific heats at the constant volume and constant pressure were derived in terms of the power moments of the atomic displacements. Numerical calculations of thermodynamic properties have been performed for Au and Al thin films and compared with those of bulk metals. This research proposes that thermodynamic quantities of thin films approach the values of bulk when the thickness of thin film is about 70 nm. - Highlights: • Thermodynamic properties of thin films were investigated using the moment method. • Expressions of Helmholtz energy, expansion coefficient, specific heats were derived. • Calculations for Au, Al thin films were performed and compared with those of bulks

  19. Theoretical investigation of the thermodynamic properties of metallic thin films

    Energy Technology Data Exchange (ETDEWEB)

    Hung, Vu Van [Vietnam Education Publishing House, 81 Tran Hung Dao, Hanoi (Viet Nam); Phuong, Duong Dai [Hanoi National University of Education, 136 Xuan Thuy, Hanoi (Viet Nam); Hoa, Nguyen Thi [University of Transport and Communications, Lang Thuong, Dong Da, Hanoi (Viet Nam); Hieu, Ho Khac, E-mail: hieuhk@duytan.edu.vn [Institute of Research and Development, Duy Tan University, K7/25 Quang Trung, Danang (Viet Nam)

    2015-05-29

    The thermodynamic properties of metallic thin films with face-centered cubic structure at ambient conditions were investigated using the statistical moment method including the anharmonicity effects of thermal lattice vibrations. The analytical expressions of Helmholtz free energy, lattice parameter, linear thermal expansion coefficient, specific heats at the constant volume and constant pressure were derived in terms of the power moments of the atomic displacements. Numerical calculations of thermodynamic properties have been performed for Au and Al thin films and compared with those of bulk metals. This research proposes that thermodynamic quantities of thin films approach the values of bulk when the thickness of thin film is about 70 nm. - Highlights: • Thermodynamic properties of thin films were investigated using the moment method. • Expressions of Helmholtz energy, expansion coefficient, specific heats were derived. • Calculations for Au, Al thin films were performed and compared with those of bulks.

  20. Harnessing Thin-Film Continuous-Flow Assembly Lines.

    Science.gov (United States)

    Britton, Joshua; Castle, Jared W; Weiss, Gregory A; Raston, Colin L

    2016-07-25

    Inspired by nature's ability to construct complex molecules through sequential synthetic transformations, an assembly line synthesis of α-aminophosphonates has been developed. In this approach, simple starting materials are continuously fed through a thin-film reactor where the intermediates accrue molecular complexity as they progress through the flow system. Flow chemistry allows rapid multistep transformations to occur via reaction compartmentalization, an approach not amenable to using conventional flasks. Thin film processing can also access facile in situ solvent exchange to drive reaction efficiency, and through this method, α-aminophosphonate synthesis requires only 443 s residence time to produce 3.22 g h(-1) . Assembly-line synthesis allows unprecedented reaction flexibility and processing efficiency. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  1. Influence of thin porous Al2O3 layer on aluminum cathode to the Hα line shape in glow discharge

    International Nuclear Information System (INIS)

    Steflekova, V.; Sisovic, N. M.; Konjevic, N.

    2009-01-01

    The results of the Balmer alfa line shape study in a plane cathode-hollow anode Grimm discharge with aluminum (Al) cathode covered with thin layer of porous Al 2 O 3 are presented. The comparison with same line profile recorded with pure Al cathode shows lack of excessive Doppler broadened line wings, which are always detected in glow discharge with metal cathode. The effect is explained by the lack of strong electric field in the cathode sheath region, which is missing in the presence of thin oxide layer in, so called, spray discharge.

  2. Method and apparatus for determining weldability of thin sheet metal

    Science.gov (United States)

    Goodwin, Gene M.; Hudson, Joseph D.

    1988-01-01

    A fixture is provided for testing thin sheet metal specimens to evaluate hot-cracking sensitivity for determining metal weldability on a heat-to-heat basis or through varying welding parameters. A test specimen is stressed in a first direction with a load selectively adjustable over a wide range and then a weldment is passed along over the specimen in a direction transverse to the direction of strain to evaluate the hot-cracking characteristics of the sheet metal which are indicative of the weldability of the metal. The fixture provides evaluations of hot-cracking sensitivity for determining metal weldability in a highly reproducible manner with minimum human error.

  3. A comparison of surface properties of metallic thin film photocathodes

    CERN Document Server

    Mistry, Sonal; Valizadeh, Reza; Jones, L.B; Middleman, Keith; Hannah, Adrian; Militsyn, B.L; Noakes, Tim

    2017-01-01

    In this work the preparation of metal photocathodes by physical vapour deposition magnetron sputtering has been employed to deposit metallic thin films onto Cu, Mo and Si substrates. The use of metallic cathodes offers several advantages: (i) metal photocathodes present a fast response time and a relative insensitivity to the vacuum environment (ii) metallic thin films when prepared and transferred in vacuum can offer smoother and cleaner emitting surfaces. The photocathodes developed here will ultimately be used in S-band Normal Conducting RF (NCRF) guns such as that used in VELA (Versatile Electron Linear Accelerator) and the proposed CLARA (Compact Linear Accelerator for Research and Applications) Free Electron Laser test facility. The samples grown on Si substrates were used to investigate the morphology and thickness of the film. The samples grown onto Cu and Mo substrates were analysed and tested as photocathodes in a surface characterisation chamber, where X-Ray Photoelectron spectroscopy (XPS) was emp...

  4. High Precision Metal Thin Film Liftoff Technique

    Science.gov (United States)

    Brown, Ari D. (Inventor); Patel, Amil A. (Inventor)

    2015-01-01

    A metal film liftoff process includes applying a polymer layer onto a silicon substrate, applying a germanium layer over the polymer layer to create a bilayer lift off mask, applying a patterned photoresist layer over the germanium layer, removing an exposed portion of the germanium layer, removing the photoresist layer and a portion of the polymer layer to expose a portion of the substrate and create an overhanging structure of the germanium layer, depositing a metal film over the exposed portion of the substrate and the germanium layer, and removing the polymer and germanium layers along with the overlaying metal film.

  5. Transition metal carbide nanocomposite and amorphous thin films

    OpenAIRE

    Tengstrand, Olof

    2014-01-01

    This thesis explores thin films of binary and ternary transition metal carbides, in the Nb-C, Ti-Si-C, Nb-Si-C, Zr-Si-C, and Nb-Ge-C systems. The electrical and mechanical properties of these systems are affected by their structure and here both nanocomposite and amorphous thin films are thus investigated. By appropriate choice of transition metal and composition the films can be designed to be multifunctional with a combination of properties, such as low electric resistivity, low contact res...

  6. Method and mold for casting thin metal objects

    Science.gov (United States)

    Pehrson, Brandon P; Moore, Alan F

    2014-04-29

    Provided herein are various embodiments of systems for casting thin metal plates and sheets. Typical embodiments include layers of mold cavities that are oriented vertically for casting the metal plates. In some embodiments, the mold cavities include a beveled edge such that the plates that are cast have a beveled edge. In some embodiments, the mold cavities are filled with a molten metal through an open horizontal edge of the cavity. In some embodiments, the mold cavities are filled through one or more vertical feed orifices. Further disclosed are methods for forming a thin cast metal plate or sheet where the thickness of the cast part is in a range from 0.005 inches to 0.2 inches, and the surface area of the cast part is in a range from 16 square inches to 144 square inches.

  7. ANTIREFLECTION MULTILAYER COATINGS WITH THIN METAL LAYERS

    Directory of Open Access Journals (Sweden)

    L. A. Gubanova

    2016-03-01

    Full Text Available The design of anti-reflective coatings for metal surfaces of Al, Ti, N,i Cr is proposed. The coatings have the form of alternating layers of dielectric/metal/dielectric with the number of cells up to15. The method of calculation of such coatings is proposed. We have calculated the coatings of the type [HfO2/Cr/HfO2]15, [ZrO2/Ti/Al2O3]15, [ZrO2/Cr/ZrO2]15. It is shown that the proposed interference coatings provide reduction of the residual reflectance of the metal several times (from 3.5 to 6.0 in a wide spectral range (300-1000 nm. The proposed coatings can be recommended as anti-reflective coatings for energy saving solar systems and batteries, and photovoltaic cells.

  8. Preparation of self-supporting thin metal target films

    International Nuclear Information System (INIS)

    Wang Xiuying; Ge Suxian; Yin Jianhua; Yin Xu; Jin Genming

    1989-01-01

    The preparation method and equipment for thin metal self-supporting target without oil contamination are described. The influence of target films contaminated by oil vapor on accuracy of nuclear-physics experimental data are also discussed. The analytical results on carbon content in the prepared films of three elements show that the equipment is very effective for eliminating contamination

  9. Thin metal films in resistivity-based chemical sensing

    Czech Academy of Sciences Publication Activity Database

    Podešva, Pavel; Foret, František

    2013-01-01

    Roč. 9, č. 4 (2013), s. 642-652 ISSN 1573-4110 R&D Projects: GA ČR(CZ) GAP301/11/2055 Institutional support: RVO:68081715 Keywords : voltohmmetric sensing * chemiresistor * thin metal film * gas sensing Subject RIV: CB - Analytical Chemistry, Separation Impact factor: 1.194, year: 2013

  10. Metal nanoparticles for thin film solar cells

    DEFF Research Database (Denmark)

    Gritti, Claudia

    and intensity depends on the nanoparticle’s size, shape, and local dielectric environment, thus absorption enhancement in a defined wavelength range can be achieved varying these properties (tuning the LSP resonance). Even though scattering enhancement of photons above the gap of the semiconductor is useful...... to increase light trapping and can come along regardless, we aim, as first target, to absorb forbidden (for the semiconductor) photons by the NPs which can excite hot electrons inside the metal NP and emit them directly into the conduction band of the solar cell semiconductor, without going through...... the promotion of electrons from the valence band of the semiconductor. The photoemission would extend the spectral response of the photovoltaic device. Thus, NPs are placed at the metal/semiconductor interface (in order to exploit the localization characteristic of the LSP enhancement) and are used as active...

  11. A method for thickness determination of thin films of amalgamable metals by total-reflection X-ray fluorescence

    International Nuclear Information System (INIS)

    Bennun, L.; Greaves, E.D.; Barros, H.; Diaz-Valdes, J.

    2009-01-01

    A method for thickness determination of thin amalgamable metallic films by total-reflection X-ray fluorescence (TXRF) is presented. The peak's intensity in TXRF spectra are directly related to the surface density of the sample, i.e. to its thickness in a homogeneous film. Performing a traditional TXRF analysis on a thin film of an amalgamated metal, and determining the relative peak intensity of a specific metal line, the layer thickness can be precisely obtained. In the case of gold thickness determination, mercury and gold peaks overlap, hence we have developed a general data processing scheme to achieve the most precise results.

  12. Theoretical pulsation of metallic-line stars

    International Nuclear Information System (INIS)

    Cox, A.N.; King, D.S.; Hodson, S.W.

    1979-01-01

    The linear-theory radial-pulsation stability of low-helium delta Scuti variable models (1.0--2.5 Msun) has been investigated to see if metallicism and pulsation can occur simultaneously. Metallicism, which occurs in slowly rotating stars after the gravitational settling of He and the loss of the He II convection zone and its deep mixing for Y< or approx. =0.1, can then be established rapidly compared with the evolution time scale. Pulsation can still occur with driving due to the residual helium and the enhanced hydrogen. With the reduced helium giving no connection zone, the pulsation instability strip, whose blue and edges are estimated in this paoer, is about half as wide as with a normal helium abundance. Zero helium in the surface driving regions, however, produces blue edges so red that probably no instability strip exists at all. The red edge, predicted theoretically on the basis of the importance of convection in the outer zone, agrees well with the observational one. Cool, low-helium and metallic-line stars are then predicted to pulsate in a 200--500 K wide strip that is widest between the main-sequence luminosity of 5 Lsun and 15 Lsun. This strip reasonably includes the observed pulsating delta Del and mild Am stars, but there may be conflicts. Since blue edges for varying ionization-zone helium content occur across the entire instability strip, bluer first and higher overtone pulsations are also predicted everywhere from less than 7000 K to over 8000 K, the redder ones probably showing metallicism

  13. Metallic and Ceramic Thin Film Thermocouples for Gas Turbine Engines

    Directory of Open Access Journals (Sweden)

    Otto J. Gregory

    2013-11-01

    Full Text Available Temperatures of hot section components in today’s gas turbine engines reach as high as 1,500 °C, making in situ monitoring of the severe temperature gradients within the engine rather difficult. Therefore, there is a need to develop instrumentation (i.e., thermocouples and strain gauges for these turbine engines that can survive these harsh environments. Refractory metal and ceramic thin film thermocouples are well suited for this task since they have excellent chemical and electrical stability at high temperatures in oxidizing atmospheres, they are compatible with thermal barrier coatings commonly employed in today’s engines, they have greater sensitivity than conventional wire thermocouples, and they are non-invasive to combustion aerodynamics in the engine. Thin film thermocouples based on platinum:palladium and indium oxynitride:indium tin oxynitride as well as their oxide counterparts have been developed for this purpose and have proven to be more stable than conventional type-S and type-K thin film thermocouples. The metallic and ceramic thin film thermocouples described within this paper exhibited remarkable stability and drift rates similar to bulk (wire thermocouples.

  14. Liquid metals. Coexistence line, critical parameters, compressibility

    International Nuclear Information System (INIS)

    Filippov, L.P.

    1986-01-01

    Formulae to calculate four characteristic parameters of liquid metals (density, compressibility, critical temperature and individual parameter) according to four initial data are obtained: two values of vapor density and two values of vapor pressure. Comparison between experimental and calculation results are presented for liquid Cs, Na, Li, K, Rb

  15. Amorphous semiconducting and conducting transparent metal oxide thin films and production thereof

    Science.gov (United States)

    Perkins, John; Van Hest, Marinus Franciscus Antonius Maria; Ginley, David; Taylor, Matthew; Neuman, George A.; Luten, Henry A.; Forgette, Jeffrey A.; Anderson, John S.

    2010-07-13

    Metal oxide thin films and production thereof are disclosed. An exemplary method of producing a metal oxide thin film may comprise introducing at least two metallic elements and oxygen into a process chamber to form a metal oxide. The method may also comprise depositing the metal oxide on a substrate in the process chamber. The method may also comprise simultaneously controlling a ratio of the at least two metallic elements and a stoichiometry of the oxygen during deposition. Exemplary amorphous metal oxide thin films produced according to the methods herein may exhibit highly transparent properties, highly conductive properties, and/or other opto-electronic properties.

  16. Electromigration-induced plastic deformation in passivated metal lines

    Science.gov (United States)

    Valek, B. C.; Bravman, J. C.; Tamura, N.; MacDowell, A. A.; Celestre, R. S.; Padmore, H. A.; Spolenak, R.; Brown, W. L.; Batterman, B. W.; Patel, J. R.

    2002-11-01

    We have used scanning white beam x-ray microdiffraction to study microstructural evolution during an in situ electromigration experiment on a passivated Al(Cu) test line. The data show plastic deformation and grain rotations occurring under the influence of electromigration, seen as broadening, movement, and splitting of reflections diffracted from individual metal grains. We believe this deformation is due to localized shear stresses that arise due to the inhomogeneous transfer of metal along the line. Deviatoric stress measurements show changes in the components of stress within the line, including relaxation of stress when current is removed.

  17. Thin films of metal oxides on metal single crystals: Structure and growth by scanning tunneling microscopy

    International Nuclear Information System (INIS)

    Galloway, H.C.

    1995-12-01

    Detailed studies of the growth and structure of thin films of metal oxides grown on metal single crystal surfaces using Scanning Tunneling Microscopy (STM) are presented. The oxide overlayer systems studied are iron oxide and titanium oxide on the Pt(III) surface. The complexity of the metal oxides and large lattice mismatches often lead to surface structures with large unit cells. These are particularly suited to a local real space technique such as scanning tunneling microscopy. In particular, the symmetry that is directly observed with the STM elucidates the relationship of the oxide overlayers to the substrate as well as distinguishing, the structures of different oxides

  18. On-line and precise measurement of iron wear using thin layer activation reactions by proton beam

    International Nuclear Information System (INIS)

    Kosako, Toshiso; Nishimura, Kazuo.

    1990-01-01

    For the purpose of the on-line measurement of iron wear, thin layer activation (TLA) method or surface layer activation (SLA) method has been carried out since early 1970s. This method uses the irradiation of charged particle beam like protons from an accelerator onto a metal surface to produce a thin activated layer of several tens μm. The wear of this activated layer is measured by nondestructive on-line method with a radiation detector. There are two methods of the measurement. One is the activity loss measurement on the surface, and the other is the activity measurement of the metal debris collected in a filter. The former method is considered here. The purpose it to measure the wear of engine cam noses to help the development of good engine oil. Proton beam irradiation with a tandem van de Graaff accelerator, wear calibration using a gamma ray spectrometer, on-line wear measurement of cam noses of car engines by TLA method and so on are reported. The 7.00 MeV proton beam from a van de Graaff accelerator was used for activation, and Co-56, Co-57 and Co-58 were obtained in thin layers. (K.I.)

  19. Investigation of the Section Thickness Measurement in Tomosynthesis by Thin Metal Plate Edge Method.

    Science.gov (United States)

    Ikeno, Kaoru; Akita, Tsunemichi; Hanai, Kozo; Muramatsu, Yoshihisa

    When performing tomosynthesis, the section thickness needs to be set depending on a radiographic part and its diagnostic purpose. However, the section thickness in tomosynthesis has not been clearly defined and its measurement method has not been established yet. In this study, we devised the alternative measurement method to diagnose the section thickness using an edge of thin metal plate, and compared with the simulation results, the wire and bead method reported in the previous papers. The tomographic image of the thin metal plate positioned on the table top inclining 30 degrees, which showed the edge spread function (ESF) of each tomographic height, was taken, and then the line spread function (LSF) was obtained by differentiating the ESF image. For the next, a profile curve was plotted by maximum values of LSF of each tomographic height, and a section thickness was calculated using the full width at half maximum (FWHM) of the profile curve. The edge method derived the section thickness close to the simulation results than the other methods. Further, the section thickness depends on the thickness of the metal plate and not the material. The thickness of the metal plate suitable for the evaluation of section thickness is 0.3 mm that is equivalent to pixel size of the flat panel detector (FPD). We conducted quantitative verification to establish the measurement method of the section thickness. The edge method is a useful technique as well as the wire and bead method for grasping basic characteristics of an imaging system.

  20. Solution processed metal oxide thin film hole transport layers for high performance organic solar cells

    Science.gov (United States)

    Steirer, K. Xerxes; Berry, Joseph J.; Chesin, Jordan P.; Lloyd, Matthew T.; Widjonarko, Nicodemus Edwin; Miedaner, Alexander; Curtis, Calvin J.; Ginley, David S.; Olson, Dana C.

    2017-01-10

    A method for the application of solution processed metal oxide hole transport layers in organic photovoltaic devices and related organic electronics devices is disclosed. The metal oxide may be derived from a metal-organic precursor enabling solution processing of an amorphous, p-type metal oxide. An organic photovoltaic device having solution processed, metal oxide, thin-film hole transport layer.

  1. Two-scale homogenization to determine effective parameters of thin metallic-structured films

    Science.gov (United States)

    Marigo, Jean-Jacques

    2016-01-01

    We present a homogenization method based on matched asymptotic expansion technique to derive effective transmission conditions of thin structured films. The method leads unambiguously to effective parameters of the interface which define jump conditions or boundary conditions at an equivalent zero thickness interface. The homogenized interface model is presented in the context of electromagnetic waves for metallic inclusions associated with Neumann or Dirichlet boundary conditions for transverse electric or transverse magnetic wave polarization. By comparison with full-wave simulations, the model is shown to be valid for thin interfaces up to thicknesses close to the wavelength. We also compare our effective conditions with the two-sided impedance conditions obtained in transmission line theory and to the so-called generalized sheet transition conditions. PMID:27616916

  2. Diagnostics of metal state in steam lines

    International Nuclear Information System (INIS)

    Gofman, Yu.M.; Kazantseva, N.S.; Losev, L.Ya.; Nevolina, G.S.

    1986-01-01

    A series of micropore detection methods is suggested: light microscopy, electron microscopy, hydrostatic weighing; and comparative investigations of pore-formation processes in 12Kh1MF steel steam lines, which have operated for about 100 thousand hours at t=550 deg C and 47-55 MPa stresses are conducted using these methods. It is shown, that electron microscpy method can be applied at the early stages damaging, when embrionic micropores of 0.1 μm in size appear. Optical metallography allows one to detect pores of about 1 μm in size. Damage in density using the hydrostatic weighing method is estimated in the following way: at creep stages 1-2-0.1; at stage 3-0.4-0.6; at predestruction stage the degree of damage equals to 0.7-0.8

  3. TXRF analysis of trace metals in thin silicon nitride films

    International Nuclear Information System (INIS)

    Vereecke, G.; Arnauts, S.; Verstraeten, K.; Schaekers, M.; Heyrts, M.M.

    2000-01-01

    As critical dimensions of integrated circuits continue to decrease, high dielectric constant materials such as silicon nitride are being considered to replace silicon dioxide in capacitors and transistors. The achievement of low levels of metal contamination in these layers is critical for high performance and reliability. Existing methods of quantitative analysis of trace metals in silicon nitride require high amounts of sample (from about 0.1 to 1 g, compared to a mass of 0.2 mg for a 2 nm thick film on a 8'' silicon wafer), and involve digestion steps not applicable to films on wafers or non-standard techniques such as neutron activation analysis. A novel approach has recently been developed to analyze trace metals in thin films with analytical techniques currently used in the semiconductor industry. Sample preparation consists of three steps: (1) decomposition of the silicon nitride matrix by moist HF condensed at the wafer surface to form ammonium fluosilicate. (2) vaporization of the fluosilicate by a short heat treatment at 300 o C. (3) collection of contaminants by scanning the wafer surface with a solution droplet (VPD-DSC procedure). The determination of trace metals is performed by drying the droplet on the wafer and by analyzing the residue by TXRF, as it offers the advantages of multi-elemental analysis with no dilution of the sample. The lower limits of detection for metals in 2 nm thick films on 8'' silicon wafers range from about 10 to 200 ng/g. The present study will focus on the matrix effects and the possible loss of analyte associated with the evaporation of the fluosilicate salt, in relation with the accuracy and the reproducibility of the method. The benefits of using an internal standard will be assessed. Results will be presented from both model samples (ammonium fluoride contaminated with metallic salts) and real samples (silicon nitride films from a production tool). (author)

  4. Biased resistor network model for electromigration failure and related phenomena in metallic lines

    Science.gov (United States)

    Pennetta, C.; Alfinito, E.; Reggiani, L.; Fantini, F.; Demunari, I.; Scorzoni, A.

    2004-11-01

    Electromigration phenomena in metallic lines are studied by using a biased resistor network model. The void formation induced by the electron wind is simulated by a stochastic process of resistor breaking, while the growth of mechanical stress inside the line is described by an antagonist process of recovery of the broken resistors. The model accounts for the existence of temperature gradients due to current crowding and Joule heating. Alloying effects are also accounted for. Monte Carlo simulations allow the study within a unified theoretical framework of a variety of relevant features related to the electromigration. The predictions of the model are in excellent agreement with the experiments and in particular with the degradation towards electrical breakdown of stressed Al-Cu thin metallic lines. Detailed investigations refer to the damage pattern, the distribution of the times to failure (TTFs), the generalized Black’s law, the time evolution of the resistance, including the early-stage change due to alloying effects and the electromigration saturation appearing at low current densities or for short line lengths. The dependence of the TTFs on the length and width of the metallic line is also well reproduced. Finally, the model successfully describes the resistance noise properties under steady state conditions.

  5. Thin films by metal-organic precursor plasma spray

    International Nuclear Information System (INIS)

    Schulz, Douglas L.; Sailer, Robert A.; Payne, Scott; Leach, James; Molz, Ronald J.

    2009-01-01

    While most plasma spray routes to coatings utilize solids as the precursor feedstock, metal-organic precursor plasma spray (MOPPS) is an area that the authors have investigated recently as a novel route to thin film materials. Very thin films are possible via MOPPS and the technology offers the possibility of forming graded structures by metering the liquid feed. The current work employs metal-organic compounds that are liquids at standard temperature-pressure conditions. In addition, these complexes contain chemical functionality that allows straightforward thermolytic transformation to targeted phases of interest. Toward that end, aluminum 3,5-heptanedionate (Al(hd) 3 ), triethylsilane (HSi(C 2 H 5 ) 3 or HSiEt 3 ), and titanium tetrakisdiethylamide (Ti(N(C 2 H 5 ) 2 ) 4 or Ti(NEt 2 ) 4 ) were employed as precursors to aluminum oxide, silicon carbide, and titanium nitride, respectively. In all instances, the liquids contain metal-heteroatom bonds envisioned to provide atomic concentrations of the appropriate reagents at the film growth surface, thus promoting phase formation (e.g., Si-C bond in triethylsilane, Ti-N bond in titanium amide, etc.). Films were deposited using a Sulzer Metco TriplexPro-200 plasma spray system under various experimental conditions using design of experiment principles. Film compositions were analyzed by glazing incidence x-ray diffraction and elemental determination by x-ray spectroscopy. MOPPS films from HSiEt 3 showed the formation of SiC phase but Al(hd) 3 -derived films were amorphous. The Ti(NEt 2 ) 4 precursor gave MOPPS films that appear to consist of nanosized splats of TiOCN with spheres of TiO 2 anatase. While all films in this study suffered from poor adhesion, it is anticipated that the use of heated substrates will aid in the formation of dense, adherent films.

  6. Induced voltages in metallic pipelines near power transmission lines

    International Nuclear Information System (INIS)

    Grcev, Leonid; Jankov, Voislav; Filiposki, Velimir

    2002-01-01

    With the continuous development of the electric power system and the pipeline networks used to convey oil or natural gas, cases of close proximity of high voltage structures and metallic pipelines become more and more frequent. Accordingly there is a growing concern about possible hazards resulting from voltages induced in the metallic pipelines by magnetic coupling with nearby power transmission lines. This paper presents a methodology for computation of the induced voltages in buried isolated metallic pipelines. A practical example of computation is also presented. (Author)

  7. A comparison of alternative methods for estimating the self-thinning boundary line

    Science.gov (United States)

    Lianjun Zhang; Huiquan Bi; Jeffrey H. Gove; Linda S. Heath

    2005-01-01

    The fundamental validity of the self-thinning "law" has been debated over the last three decades. A long-sanding concern centers on how to objectively select data points for fitting the self-thinning line and the most appropriate regression method for estimating the two coefficients. Using data from an even-aged Pinus strobus L. stand as an...

  8. A Hierarchical Bayesian Model to Predict Self-Thinning Line for Chinese Fir in Southern China.

    Directory of Open Access Journals (Sweden)

    Xiongqing Zhang

    Full Text Available Self-thinning is a dynamic equilibrium between forest growth and mortality at full site occupancy. Parameters of the self-thinning lines are often confounded by differences across various stand and site conditions. For overcoming the problem of hierarchical and repeated measures, we used hierarchical Bayesian method to estimate the self-thinning line. The results showed that the self-thinning line for Chinese fir (Cunninghamia lanceolata (Lamb.Hook. plantations was not sensitive to the initial planting density. The uncertainty of model predictions was mostly due to within-subject variability. The simulation precision of hierarchical Bayesian method was better than that of stochastic frontier function (SFF. Hierarchical Bayesian method provided a reasonable explanation of the impact of other variables (site quality, soil type, aspect, etc. on self-thinning line, which gave us the posterior distribution of parameters of self-thinning line. The research of self-thinning relationship could be benefit from the use of hierarchical Bayesian method.

  9. Polymer thin film as coating layer to prevent corrosion of metal/metal oxide film

    Science.gov (United States)

    Sarkar, Suman; Kundu, Sarathi

    2018-04-01

    Thin film of polymer is used as coating layer and the corrosion of metal/metal oxide layer is studied with the variation of the thickness of the coating layer. The thin layer of polystyrene is fabricated using spin coating method on copper oxide (CuO) film which is deposited on glass substrate using DC magnetron sputtering technique. Thickness of the polystyrene and the CuO layers are determined using X-ray reflectivity (XRR) technique. CuO thin films coated with the polystyrene layer are exposed to acetic acid (2.5 v/v% aqueous CH3COOH solution) environments and are subsequently analyzed using UV-Vis spectroscopy and atomic force microscopy (AFM). Surface morphology of the film before and after interaction with the acidic environment is determined using AFM. Results obtained from the XRR and UV-Vis spectroscopy confirm that the thin film of polystyrene acts as an anticorrosion coating layer and the strength of the coating depends upon the polymer layer thickness at a constant acid concentration.

  10. Metal oxide semiconductor thin-film transistors for flexible electronics

    Energy Technology Data Exchange (ETDEWEB)

    Petti, Luisa; Vogt, Christian; Büthe, Lars; Cantarella, Giuseppe; Tröster, Gerhard [Electronics Laboratory, Swiss Federal Institute of Technology, Zürich (Switzerland); Münzenrieder, Niko [Electronics Laboratory, Swiss Federal Institute of Technology, Zürich (Switzerland); Sensor Technology Research Centre, University of Sussex, Falmer (United Kingdom); Faber, Hendrik; Bottacchi, Francesca; Anthopoulos, Thomas D. [Department of Physics and Centre for Plastic Electronics, Imperial College London, London (United Kingdom)

    2016-06-15

    The field of flexible electronics has rapidly expanded over the last decades, pioneering novel applications, such as wearable and textile integrated devices, seamless and embedded patch-like systems, soft electronic skins, as well as imperceptible and transient implants. The possibility to revolutionize our daily life with such disruptive appliances has fueled the quest for electronic devices which yield good electrical and mechanical performance and are at the same time light-weight, transparent, conformable, stretchable, and even biodegradable. Flexible metal oxide semiconductor thin-film transistors (TFTs) can fulfill all these requirements and are therefore considered the most promising technology for tomorrow's electronics. This review reflects the establishment of flexible metal oxide semiconductor TFTs, from the development of single devices, large-area circuits, up to entirely integrated systems. First, an introduction on metal oxide semiconductor TFTs is given, where the history of the field is revisited, the TFT configurations and operating principles are presented, and the main issues and technological challenges faced in the area are analyzed. Then, the recent advances achieved for flexible n-type metal oxide semiconductor TFTs manufactured by physical vapor deposition methods and solution-processing techniques are summarized. In particular, the ability of flexible metal oxide semiconductor TFTs to combine low temperature fabrication, high carrier mobility, large frequency operation, extreme mechanical bendability, together with transparency, conformability, stretchability, and water dissolubility is shown. Afterward, a detailed analysis of the most promising metal oxide semiconducting materials developed to realize the state-of-the-art flexible p-type TFTs is given. Next, the recent progresses obtained for flexible metal oxide semiconductor-based electronic circuits, realized with both unipolar and complementary technology, are reported. In

  11. Energetic Surface Smoothing of Complex Metal-Oxide Thin Films

    International Nuclear Information System (INIS)

    Willmott, P.R.; Herger, R.; Schlepuetz, C.M.; Martoccia, D.; Patterson, B.D.

    2006-01-01

    A novel energetic smoothing mechanism in the growth of complex metal-oxide thin films is reported from in situ kinetic studies of pulsed laser deposition of La 1-x Sr x MnO 3 on SrTiO 3 , using x-ray reflectivity. Below 50% monolayer coverage, prompt insertion of energetic impinging species into small-diameter islands causes them to break up to form daughter islands. This smoothing mechanism therefore inhibits the formation of large-diameter 2D islands and the seeding of 3D growth. Above 50% coverage, islands begin to coalesce and their breakup is thereby suppressed. The energy of the incident flux is instead rechanneled into enhanced surface diffusion, which leads to an increase in the effective surface temperature of ΔT≅500 K. These results have important implications on optimal conditions for nanoscale device fabrication using these materials

  12. On the mechanics of elastic lines in thin shells

    Science.gov (United States)

    Benet, Eduard; Vernerey, Franck

    The deformation of soft shells in nature and engineering is often conditioned by the presence of lines whose mechanical properties are different from the shell. For instance, the deformation of tree leaves is conditioned by the presence of harder stems, and cell mitosis is driven by a stiffening line along its membrane. From an experimental standpoint, many groups have taken advantage of this feature to develop self-actuated shells with prescribed deformations. Examples include the polymerization of gels along certain lines, or the inclusion of stiffer lines via 3D printing. However, there is not yet a general continuum theory that accounts for this type of discontinuity within the membrane. Hence, we extend the general shell theory to account for the inclusion of a line that potentially induces jumps in stresses, couple stresses and moments, across its thickness. This is achieved via coupling the rod and the membrane deformations, and ensuring continuity of displacements. The model is then applied to three important problems: a constriction disc inside a shell of revolution, the induced twisting of a shell via the torsion of an embedded line, and the effect of an helicoidal line on the uni-axial deformation of a cylindrical shell. National Science Foundation CAREER award 1350090.

  13. Colloquium: Excitons in atomically thin transition metal dichalcogenides

    Science.gov (United States)

    Wang, Gang; Chernikov, Alexey; Glazov, Mikhail M.; Heinz, Tony F.; Marie, Xavier; Amand, Thierry; Urbaszek, Bernhard

    2018-04-01

    Atomically thin materials such as graphene and monolayer transition metal dichalcogenides (TMDs) exhibit remarkable physical properties resulting from their reduced dimensionality and crystal symmetry. The family of semiconducting transition metal dichalcogenides is an especially promising platform for fundamental studies of two-dimensional (2D) systems, with potential applications in optoelectronics and valleytronics due to their direct band gap in the monolayer limit and highly efficient light-matter coupling. A crystal lattice with broken inversion symmetry combined with strong spin-orbit interactions leads to a unique combination of the spin and valley degrees of freedom. In addition, the 2D character of the monolayers and weak dielectric screening from the environment yield a significant enhancement of the Coulomb interaction. The resulting formation of bound electron-hole pairs, or excitons, dominates the optical and spin properties of the material. Here recent progress in understanding of the excitonic properties in monolayer TMDs is reviewed and future challenges are laid out. Discussed are the consequences of the strong direct and exchange Coulomb interaction, exciton light-matter coupling, and influence of finite carrier and electron-hole pair densities on the exciton properties in TMDs. Finally, the impact on valley polarization is described and the tuning of the energies and polarization observed in applied electric and magnetic fields is summarized.

  14. Development of thin film oxygen transport membranes on metallic supports

    Energy Technology Data Exchange (ETDEWEB)

    Xing, Ye

    2012-04-25

    Asymmetric membrane structure has an attractive potential in the application of O{sub 2}/N{sub 2} gas separation membrane for the future membrane-based fossil fuel power plant using oxyfuel technology, which will reduce the carbon dioxide emission. The aim of this study is the development of a metal supported multi-layer membrane structure with a thin film top membrane layer and porous ceramic interlayers. Four perovskite materials were studied as candidate membrane materials. Material properties of these perovskite materials were investigated and compared. La{sub 0.58}Sr{sub 0.4}Co{sub 0.2}Fe{sub 0.8}O{sub 3-{delta}} (LSCF58428) showed sufficient oxygen permeability, an acceptable thermal expansion coefficient and a moderate sintering temperature. Alternatively, Ba{sub 0.5}Sr{sub 0.5}Co{sub 0.8}Fe{sub 0.2}O{sub 3-{delta}} (BSCF5582) is considered obtaining very high oxygen permeability but a higher thermal expansion and a lower thermal stability than LSCF58428. Four different Ni-based alloys were studied as candidate substrate materials in the asymmetric membrane structure. The chromia-scale alloys (Hastelloy X, Inconel 600 and Haynes 214) caused Cr poisoning of the membrane layer material LSCF58428 during high-temperature co-firing in air. NiCoCrAlY with a high Al content (12.7 wt%) was found to be the most promising substrate material. It showed a good chemical compatibility with perovskite materials at high temperatures. In order to bridge the highly porous substrate and the thin top membrane layer interlayers were developed. Two interlayers were coated by screen printing on the porous NiCoCrAlY substrate which was sintered at 1225 C in flowing H{sub 2} atmosphere. Screen printing pastes were optimized by investigating various solvent and binder combinations and various ceramic powder contents. The first interlayer significantly improved the surface quality and the surface pore size has been reduced from 30-50{mu}m on the substrate to few {mu}m on the first

  15. An alternative to conventional babbitt metal-lined generator pads

    Energy Technology Data Exchange (ETDEWEB)

    Puuska, H. [Imatra Hydroelectric Power Plant (Finland)

    1996-08-01

    The generator refurbishment of the Imatra Hydroelectric Power Plant Unit 1 in Finland is described. The generator work called for installation of a new cooling system for the generator thrust bearing. The considerations leading to the decision to replace the conventional babbitt metal-lined pads with elastic metal-plastic coated thrust bearing pads and the installation of the new pads are outlined in the article. Results of the trial run are summarized; the end temperature of the unit was more than 20C lower than for units equipped with conventional babbitted bearings.

  16. High-frequency electromagnetic properties of soft magnetic metal-polyimide hybrid thin films

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Sang Woo [Nano-Materials Research Center, Korea Institute of Science and Technology, 39-1 Haweoulgog-dong, Sungbuk-gu, Seoul 136-791 (Korea, Republic of)]. E-mail: swkim@kist.re.kr; Yoon, Chong S. [Division of Advanced Materials Science, Hanyang University, Seoul 133-791 (Korea, Republic of)

    2007-09-15

    Although there are a lot of demands for suppression of unwanted high-frequency electromagnetic noise in highly integrated electronic devices such as mobile phones and notebook computers, electromagnetic thin films that effectively work in the high-frequency range have still been underdeveloped. Soft magnetic metal-polyimide (PI) hybrid films with high electrical resistivity were prepared by thermal imidization and selective oxidation between the metal alloy layer and polyamic acid (PAA) layer. Electromagnetic properties of the hybrid thin films in the radio-frequency range were characterized by using the microstrip line method and were correlated with their material parameters. Although anisotropy field of the CoFe/NiFe hybrid film was two times lower than that of the NiFe hybrid film, the saturation magnetization of the CoFe/NiFe hybrid film was three times higher than that of the NiFe hybrid film. The CoFe/NiFe hybrid film showed higher power loss in the frequency range of 3-6 GHz compared to the NiFe hybrid film. The high power loss of the CoFe/NiFe hybrid film was caused by high relative permeability and high ferromagnetic resonance (FMR) frequency due to high saturation magnetization.

  17. High-frequency electromagnetic properties of soft magnetic metal-polyimide hybrid thin films

    International Nuclear Information System (INIS)

    Kim, Sang Woo; Yoon, Chong S.

    2007-01-01

    Although there are a lot of demands for suppression of unwanted high-frequency electromagnetic noise in highly integrated electronic devices such as mobile phones and notebook computers, electromagnetic thin films that effectively work in the high-frequency range have still been underdeveloped. Soft magnetic metal-polyimide (PI) hybrid films with high electrical resistivity were prepared by thermal imidization and selective oxidation between the metal alloy layer and polyamic acid (PAA) layer. Electromagnetic properties of the hybrid thin films in the radio-frequency range were characterized by using the microstrip line method and were correlated with their material parameters. Although anisotropy field of the CoFe/NiFe hybrid film was two times lower than that of the NiFe hybrid film, the saturation magnetization of the CoFe/NiFe hybrid film was three times higher than that of the NiFe hybrid film. The CoFe/NiFe hybrid film showed higher power loss in the frequency range of 3-6 GHz compared to the NiFe hybrid film. The high power loss of the CoFe/NiFe hybrid film was caused by high relative permeability and high ferromagnetic resonance (FMR) frequency due to high saturation magnetization

  18. Evaluation of space environmental effects on metals and optical thin films on EOIM-3

    Energy Technology Data Exchange (ETDEWEB)

    Vaughn, J.A.; Linton, R.C.; Finckenor, M.M.; Kamenetzky, R.R.

    1995-02-01

    Metals and optical thin films exposed to the space environment on the Third Flight of the Evaluation of Oxygen Interactions with Materials (EOIM-3) payload, onboard Space Shuttle mission STS-46 were evaluated. The materials effects described in this paper include the effects of space exposure on various pure metals, optical thin films, and optical thin film metals. The changes induced by exposure to the space environment in the material properties were evaluated using bidirectional reflectance distribution function (BRDF), specular reflectance (250 nm to 2500 nm), ESCA, VUV reflectance (120 nm to 200 nm), ellipsometry, FTIR and optical properties. Using these analysis techniques gold optically thin film metal mirrors with nickel undercoats were observed to darken due to nickel diffusion through the gold to the surface. Also, thin film nickel mirrors formed nickel oxide due to exposure to both the atmosphere and space.

  19. Evaluation of space environmental effects on metals and optical thin films on EOIM-3

    Science.gov (United States)

    Vaughn, Jason A.; Linton, Roger C.; Finckenor, Miria M.; Kamenetzky, Rachel R.

    1995-01-01

    Metals and optical thin films exposed to the space environment on the Third Flight of the Evaluation of Oxygen Interactions with Materials (EOIM-3) payload, onboard Space Shuttle mission STS-46 were evaluated. The materials effects described in this paper include the effects of space exposure on various pure metals, optical thin films, and optical thin film metals. The changes induced by exposure to the space environment in the material properties were evaluated using bidirectional reflectance distribution function (BRDF), specular reflectance (250 nm to 2500 nm), ESCA, VUV reflectance (120 nm to 200 nm), ellipsometry, FTIR and optical properties. Using these analysis techniques gold optically thin film metal mirrors with nickel undercoats were observed to darken due to nickel diffusion through the gold to the surface. Also, thin film nickel mirrors formed nickel oxide due to exposure to both the atmosphere and space.

  20. Guiding spoof surface plasmon polaritons by infinitely thin grooved metal strip

    Directory of Open Access Journals (Sweden)

    Xiang Wan

    2014-04-01

    Full Text Available In this paper, the propagation characteristics of spoof surface plasmon polaritons (SPPs on infinitely thin corrugated metal strips are theoretically analyzed. Compared with the situations of infinitely thick lateral thickness, the infinitely thin lateral thickness leads to lower plasma frequency according to the analyses. The propagation lengths and the binding capacity of the spoof SPPs are evaluated based on the derived dispersion equation. The effects of different lateral thicknesses are also investigated. At the end, a surface wave splitter is presented using infinitely thin corrugated metal strip. Other functional planar or flexible devices can also be designed using these metal strips in microwave or terahertz regimes.

  1. Flexible Electronics Powered by Mixed Metal Oxide Thin Film Transistors

    Science.gov (United States)

    Marrs, Michael

    A low temperature amorphous oxide thin film transistor (TFT) and amorphous silicon PIN diode backplane technology for large area flexible digital x-ray detectors has been developed to create 7.9-in. diagonal backplanes. The critical steps in the evolution of the backplane process include the qualification and optimization of the low temperature (200 °C) metal oxide TFT and a-Si PIN photodiode process, the stability of the devices under forward and reverse bias stress, the transfer of the process to flexible plastic substrates, and the fabrication and assembly of the flexible detectors. Mixed oxide semiconductor TFTs on flexible plastic substrates suffer from performance and stability issues related to the maximum processing temperature limitation of the polymer. A novel device architecture based upon a dual active layer improves both the performance and stability. Devices are directly fabricated below 200 ºC on a polyethylene naphthalate (PEN) substrate using mixed metal oxides of either zinc indium oxide (ZIO) or indium gallium zinc oxide (IGZO) as the active semiconductor. The dual active layer architecture allows for adjustment to the saturation mobility and threshold voltage stability without the requirement of high temperature annealing, which is not compatible with flexible plastic substrates like PEN. The device performance and stability is strongly dependent upon the composition of the mixed metal oxide; this dependency provides a simple route to improving the threshold voltage stability and drive performance. By switching from a single to a dual active layer, the saturation mobility increases from 1.2 cm2/V-s to 18.0 cm2/V-s, while the rate of the threshold voltage shift decreases by an order of magnitude. This approach could assist in enabling the production of devices on flexible substrates using amorphous oxide semiconductors. Low temperature (200°C) processed amorphous silicon photodiodes were developed successfully by balancing the tradeoffs

  2. Patterning of metallic electrodes on flexible substrates for organic thin-film transistors using a laser thermal printing method

    International Nuclear Information System (INIS)

    Chen, Kun-Tso; Lin, Yu-Hsuan; Ho, Jeng-Rong; Chen, Chih-Kant; Liu, Sung-Ho; Liao, Jin-Long; Cheng, Hua-Chi

    2011-01-01

    We report on a laser thermal printing method for transferring patterned metallic thin films on flexible plastic substrates using a pulsed CO 2 laser. Aluminium and silver line patterns, with micrometre scale resolution on poly(ethylene terephthalate) substrates, are shown. The printed electrodes demonstrate good conductivity and fulfil the properties for bottom-contact organic thin-film transistors. In addition to providing the energy for transferring the film, the absorption of laser light results in a rise in the temperature of the film and the substrate. This also further anneals the film and softens the plastic substrate. Consequently, it is possible to obtain a film with better surface morphology and with its film thickness implanted in part into the plastic surface. This implantation reveals excellent characteristics in adhesion and flexure resistance. Being feasible to various substrates and executable at ambient temperatures renders this approach a potential alternative for patterning metallic electrodes.

  3. Thin-film composite materials as a dielectric layer for flexible metal-insulator-metal capacitors.

    Science.gov (United States)

    Tiwari, Jitendra N; Meena, Jagan Singh; Wu, Chung-Shu; Tiwari, Rajanish N; Chu, Min-Ching; Chang, Feng-Chih; Ko, Fu-Hsiang

    2010-09-24

    A new organic-organic nanoscale composite thin-film (NCTF) dielectric has been synthesized by solution deposition of 1-bromoadamantane and triblock copolymer (Pluronic P123, BASF, EO20-PO70-EO20), in which the precursor solution has been achieved with organic additives. We have used a sol-gel process to make a metal-insulator-metal capacitor (MIM) comprising a nanoscale (10 nm-thick) thin-film on a flexible polyimide (PI) substrate at room temperature. Scanning electron microscope and atomic force microscope revealed that the deposited NCTFs were crack-free, uniform, highly resistant to moisture absorption, and well adhered on the Au-Cr/PI. The electrical properties of 1-bromoadamantane-P123 NCTF were characterized by dielectric constant, capacitance, and leakage current measurements. The 1-bromoadamantane-P123 NCTF on the PI substrate showed a low leakage current density of 5.5 x 10(-11) A cm(-2) and good capacitance of 2.4 fF at 1 MHz. In addition, the calculated dielectric constant of 1-bromoadamantane-P123 NCTF was 1.9, making them suitable candidates for use in future flexible electronic devices as a stable intermetal dielectric. The electrical insulating properties of 1-bromoadamantane-P123 NCTF have been improved due to the optimized dipole moments of the van der Waals interactions.

  4. Applicability of X-ray fluorescence spectroscopy as method to determine thickness and composition of stacks of metal thin films: A comparison with imaging and profilometry

    International Nuclear Information System (INIS)

    Vrielink, J.A.M.; Tiggelaar, R.M.; Gardeniers, J.G.E.; Lefferts, L.

    2012-01-01

    In this work the applicability of X-ray fluorescence spectroscopy (XRF) for fast, accurate and non-destructive determination of the thickness of a variety of single-layer and multi-layer metal thin films deposited on glass and silicon is investigated. Data obtained with XRF is compared with information from profilometry and images from scanning electron microscopy (SEM). Whereas thickness determinations based on profilometry and cross-sectional SEM-imaging have restrictions with respect to thickness of metal stacks or hardness of the metals, XRF has no such limitations. Moreover, XRF can discriminate between sublayers in a multi-layer film, and can also be utilized for compositional analysis and density estimations. Good agreement between thickness data obtained with XRF, profilometry and SEM-images is found, under the justifiable assumption that the density of sputter-deposited and evaporated thin films is ca. 5% below that of bulk metals. Similar XRF-results are found for non-patterned areas (64 mm 2 metal) as well as lithographically patterned areas containing a series of small metal lines (total metal surface ca. 8 mm 2 ). As a consequence, it is concluded that XRF is a versatile technique for analysis, verification, control or evaluation of the thickness, density or (elemental) composition of thin metal film line-patterns, during their fabrication as well as prior or post to applications.

  5. PHYSICAL BASES OF SYSTEMS CREATION FOR MAGNETIC-IMPULSIVE ATTRACTION OF THIN-WALLED SHEET METALS

    Directory of Open Access Journals (Sweden)

    Y. Batygin

    2009-01-01

    Full Text Available The work is dedicated to the physical base of systems creating for the thin-walled sheet metals magnetic pulse attraction. Some practical realization models of the author’s suggestions are represented.

  6. Impulse Hydroforming Method for Very Thin Sheets from Metallic or Hybrid Materials

    OpenAIRE

    Beerwald, C.; Beerwald, M.; Dirksen, U.; Henselek, A.

    2010-01-01

    Forming of very thin metallic and hybrid material foils is a demanding task in several application areas as for example in food or pharmaceutical packaging industries. Narrow forming limits of very thin sheet metals as well as minor process reliability due to necessary exact tool manufacturing (small punch-die clearance), both, causes abiding interest in new and innovative forming processes. In this contribution a new method using high pressure pulses will be introduced to form small geometry...

  7. Using thin metal layers on composite structures for shielding the electromagnetic pulse caused by nearby lightning

    NARCIS (Netherlands)

    Blaj, M.A.; Buesink, Frederik Johannes Karel; Damstra, G.C.; Leferink, Frank Bernardus Johannes

    2011-01-01

    Electronic systems in composite structures could be vulnerable to the (dominant magnetic) field caused by a lightning strike, because only thin layers of metal can be used on composite structures. Thin layers result in a very low shielding effectiveness against magnetic fields. Many experiments

  8. Spontaneous magnetization of thin films of ordered and disordered alloys of transition metals

    International Nuclear Information System (INIS)

    Nguyen Nhat Khanh.

    1989-12-01

    A method of calculation of spontaneous magnetization of thin films of transition metal alloys is described. The method is based on the Hubbard model for d electrons. Use of the Bragg-Williams approximation and two-dimensional canonical transformations has allowed to calculate the magnetization. Results for a Ni 3 Fe thin film are presented. (author). 11 refs, 1 fig

  9. X-ray spectral line coincidences between fluorine VIII (and IX) and transition metal lines

    International Nuclear Information System (INIS)

    Charatis, G.; Rockett, P.D.; Burkhalter, P.G.

    1983-01-01

    X-ray spectroscopy was performed in the 12 to 15 A region, recording L-shell lines from selected laser-irradiated transition metals. Line coincidences and near coincidences were identified between Fe, Cr, Mn, and Ni L-spectra, and F VIII and F IX K-shell lines. Wavelengths were determined to accuracies of 1 to 3 mA and will be utilized in selecting potential pumping candidates in future x-ray lasing schemes. High-resolution x-ray spectra were collected under controlled illumination and target conditions using 1.05 μm and 0.527 μm laser excitation with the KMS CHROMA laser

  10. Characterization of PZT thin films on metal substrates

    International Nuclear Information System (INIS)

    Dutschke, A.

    2008-01-01

    Lead zirconate titanate (PbZr x Ti 1-x O 3 ,PZT) is one of the most applied ceramic materials because of its distinctive piezo- and ferroelectric properties. Prepared as thin films on flexible, metallic substrates it can be used for various applications as strain gauges, key switches, vibration dampers, microactuators and ultrasonic transducers. The aim of this work is to analyze the microstructure and the phase-content of PZT-thin films deposited on temperature- und acid-resistant hastelloy-sheets, to correlate the results with the ferroelectric and dielectric properties. It is demonstrated, that the specific variation of the microstructure can be achieved by different thermal treatments and the selective addition of Neodymium as dopant. Nd-doping leads to a shift of the maximum nucleation rate towards reduced temperatures and a decrease in the rate of growth compared to undoped films. The PZT-films are prepared by a sol-gel-process in fourfold multilayers with a composition near the morphotropic phase boundary, where the tetragonal und rhombohedral perovskite-phases coexist. The crystallisation in Nd-doped and undoped films takes place heterogeneously, preferentially at the interfaces and on the surface of the multilayered films as well as on the inner surface of pores within the films. For the first time, the Zr:Ti fluctuation phenomena emerging in sol-gel derived PZT films is related to the microstructure and the local phase content on a nanometer scale. In this connection it is proved, that long-distance Zr:Ti gradients arise preferentially before and during the crystallisation of the pyrochlore phase. During the following crystallisation of the perovskite phase, the crystallites grow across these gradients without modifying them. It is pointed out that the fluctuation in the Zr:Ti ratio has only minor influence on the amount of the tetragonal or rhombohedral distortion of the crystallites after the transition from the para- to the ferroelectric state due to

  11. Synthesis of 2D Metal Chalcogenide Thin Films through the Process Involving Solution-Phase Deposition.

    Science.gov (United States)

    Giri, Anupam; Park, Gyeongbae; Yang, Heeseung; Pal, Monalisa; Kwak, Junghyeok; Jeong, Unyong

    2018-04-24

    2D metal chalcogenide thin films have recently attracted considerable attention owing to their unique physicochemical properties and great potential in a variety of applications. Synthesis of large-area 2D metal chalcogenide thin films in controllable ways remains a key challenge in this research field. Recently, the solution-based synthesis of 2D metal chalcogenide thin films has emerged as an alternative approach to vacuum-based synthesis because it is relatively simple and easy to scale up for high-throughput production. In addition, solution-based thin films open new opportunities that cannot be achieved from vacuum-based thin films. Here, a comprehensive summary regarding the basic structures and properties of different types of 2D metal chalcogenides, the mechanistic details of the chemical reactions in the synthesis of the metal chalcogenide thin films, recent successes in the synthesis by different reaction approaches, and the applications and potential uses is provided. In the last perspective section, the technical challenges to be overcome and the future research directions in the solution-based synthesis of 2D metal chalcogenides are discussed. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  12. Ultra thin metallic coatings to control near field radiative heat transfer

    Science.gov (United States)

    Esquivel-Sirvent, R.

    2016-09-01

    We present a theoretical calculation of the changes in the near field radiative heat transfer between two surfaces due to the presence of ultra thin metallic coatings on semiconductors. Depending on the substrates, the radiative heat transfer is modulated by the thickness of the ultra thin film. In particular we consider gold thin films with thicknesses varying from 4 to 20 nm. The ultra-thin film has an insulator-conductor transition close to a critical thickness of dc = 6.4 nm and there is an increase in the near field spectral heat transfer just before the percolation transition. Depending on the substrates (Si or SiC) and the thickness of the metallic coatings we show how the near field heat transfer can be increased or decreased as a function of the metallic coating thickness. The calculations are based on available experimental data for the optical properties of ultrathin coatings.

  13. Transparent and conductive electrodes by large-scale nanostructuring of noble metal thin-films

    DEFF Research Database (Denmark)

    Linnet, Jes; Runge Walther, Anders; Wolff, Christian

    grid, and nano-wire thin-films [1]. The indium and carbon films do not match the chemical stability nor the electrical performance of the noble metals, and many metal films are not uniform in material distribution leading to significant surface roughness and randomized transmission haze. We demonstrate...

  14. Mechanical properties of vapor-deposited thin metallic films: a status report

    International Nuclear Information System (INIS)

    Adler, P.H.

    1982-01-01

    The mechanical properties of vapor-deposited thin metallic films are being studied in conjunction with the target fabrication group associated with the laser-fusion energy program. The purpose of the work is to gain an understanding as to which metals are structurally best suited to contain a glass microsphere filled with deuterium-tritium (D-T) gas at large internal pressures

  15. Temperature dependence of dynamical permeability characterization of magnetic thin films using shorted microstrip line probe

    International Nuclear Information System (INIS)

    Li, Xiling; Li, Chengyi; Chai, Guozhi

    2017-01-01

    A temperature dependence microwave permeability characterization system of magnetic thin film up to 10 GHz is designed and fabricated. This system can be used at temperatures ranging from room temperature to 200 °C, and is based on a shorted microstrip probe, which is made by microwave printed circuit board. Without contacting the magnetic thin films to the probe, the microwave permeability of the film can be detected without any limitations of sample size and with almost the same accuracy, as shown by comparison with the results obtained from a shorted microstrip transmission-line fixture. The complex permeability can be deduced by an analytical approach from the measured reflection coefficient of a strip line ( S 11 ) with and without a ferromagnetic film material on it. The procedures are the same with the shorted microstrip transmission-line method. The microwave permeability of an oblique deposited CoZr thin film was investigated with this probe. The results show that the room temperature dynamic permeability of the CoZr film is in good agreement with the results obtained from the established short-circuited microstrip perturbation method. The temperature dependence permeability results fit well with the Landau–Lifshitz–Gilbert equation. Development of the temperature-dependent measurement of the magnetic properties of magnetic thin film may be useful for the high-frequency application of magnetic devices at high temperatures. (paper)

  16. Control of in-plane texture of body centered cubic metal thin films

    International Nuclear Information System (INIS)

    Harper, J.M.; Rodbell, K.P.; Colgan, E.G.; Hammond, R.H.

    1997-01-01

    We show that dramatically different in-plane textures can be produced in body centered cubic (bcc) metal thin films deposited on amorphous substrates under different deposition conditions. The crystallographic orientation distribution of polycrystalline bcc metal thin films on amorphous substrates often has a strong left-angle 110 right-angle fiber texture, indicating that {110} planes are parallel to the substrate plane. When deposition takes place under bombardment by energetic ions or atoms at an off-normal angle of incidence, the left-angle 110 right-angle fiber texture develops an in-plane texture, indicating nonrandom azimuthal orientations of the crystallites. Three orientations in Nb films have been observed under different deposition geometries, in which the energetic particle flux coincides with channeling directions in the bcc crystal structure. In-plane orientations in Mo films have also been obtained in magnetron sputtering systems with various configurations. These are described, and an example is given in which the in-plane orientation of Mo films deposited in two different in-line magnetron sputtering systems differs by a 90 degree rotation. In these two cases, there is a strong left-angle 110 right-angle fiber texture, but the in-plane left-angle 100 right-angle direction is oriented parallel to the scan direction in one system, and perpendicular to the scan direction in the other system. The conditions which produce such different in-plane textures in two apparently similar sputtering systems are discussed. copyright 1997 American Institute of Physics

  17. Nanoscale strengthening mechanisms in metallic thin film systems

    Science.gov (United States)

    Schoeppner, Rachel Lynn

    Nano-scale strengthening mechanisms for thin films were investigated for systems governed by two different strengthening techniques: nano-laminate strengthening and oxide dispersion strengthening. Films were tested under elevated temperature conditions to investigate changes in deformation mechanisms at different operating temperatures, and the structural stability. Both systems exhibit remarkable stability after annealing and thus long-term reliability. Nano-scale metallic multilayers with smaller layer thicknesses show a greater relative resistance to decreasing strength at higher temperature testing conditions than those with larger layer thicknesses. This is seen in both Cu/Ni/Nb multilayers as well as a similar tri-component bi-layer system (Cu-Ni/Nb), which removed the coherent interface from the film. Both nanoindentation and micro-pillar compression tests investigated the strain-hardening ability of these two systems to determine what role the coherent interface plays in this mechanism. Tri-layer films showed a higher strain-hardening ability as the layer thickness decreased and a higher strain-hardening exponent than the bi-layer system: verifying the presence of a coherent interface increases the strain-hardening ability of these multilayer systems. Both systems exhibited hardening of the room temperature strength after annealing, suggesting a change in microstructure has occurred, unlike that seen in other multilayer systems. Oxide dispersion strengthened Au films showed a marked increase in hardness and wear resistance with the addition of ZnO particles. The threshold for stress-induced grain-refinement as opposed to grain growth is seen at concentrations of at least 0.5 vol%. These systems exhibited stable microstructures during thermal cycling in films containing at least 1.0%ZnO. Nanoindentation experiments show the drop in hardness following annealing is almost completely attributed to the resulting grain growth. Four-point probe resistivity

  18. Magnetic field dependence of the superconducting proximity effect in a two atomic layer thin metallic film

    Energy Technology Data Exchange (ETDEWEB)

    Caminale, Michael; Leon Vanegas, Augusto A.; Stepniak, Agnieszka; Oka, Hirofumi; Fischer, Jeison A.; Sander, Dirk; Kirschner, Juergen [Max-Planck-Institut fuer Mikrostrukturphysik, Halle (Germany)

    2015-07-01

    The intriguing possibility to induce superconductivity in a metal, in direct contact with a superconductor, is under renewed interest for applications and for fundamental aspects. The underlying phenomenon is commonly known as proximity effect. In this work we exploit the high spatial resolution of scanning tunneling spectroscopy at sub-K temperatures and in magnetic fields. We probe the differential conductance along a line from a superconducting 9 ML high Pb nanoisland into the surrounding two layer thin Pb/Ag wetting layer on a Si(111) substrate. A gap in the differential conductance indicates superconductivity of the Pb island. We observe an induced gap in the wetting layer, which decays with increasing distance from the Pb island. This proximity length is 21 nm at 0.38 K and 0 T. We find a non-trivial dependence of the proximity length on magnetic field. Surprisingly, we find that the magnetic field does not affect the induced superconductivity up to 0.3 T. However, larger fields of 0.6 T suppress superconductivity in the wetting layer, where the Pb island still remains superconducting. We discuss the unexpected robustness of induced superconductivity in view of the high electronic diffusivity in the metallic wetting layer.

  19. Determination of stable shapes of a thin liquid metal layer using a boundary integral method

    Energy Technology Data Exchange (ETDEWEB)

    Hinaje, M [Groupe de Recherche en Electrotechnique et Electronique de Nancy, 2 avenue de la Foret de Haye, 54516 Vandoeuvre-les-Nancy (France); Vinsard, G [Laboratoire d' Energetique et de Mecanique Theorique et Appliquee, 2 avenue de la Foret de Haye, 54516 Vandoeuvre-les-Nancy (France); Dufour, S [Groupe de Recherche en Electrotechnique et Electronique de Nancy, 2 avenue de la Foret de Haye, 54516 Vandoeuvre-les-Nancy (France)

    2006-03-21

    This paper deals with a thin liquid metal layer submitted to an ac magnetic field. Experimentally, we have noticed that even if the system (inductor+liquid metal) is axisymmetric, when an ac magnetic field is applied the symmetry is broken. The observed deformations of the liquid metal are in three dimensions. Therefore, our aim is to investigate this deformation using a numerical method as boundary element method in three dimensions.

  20. Determination of stable shapes of a thin liquid metal layer using a boundary integral method

    International Nuclear Information System (INIS)

    Hinaje, M; Vinsard, G; Dufour, S

    2006-01-01

    This paper deals with a thin liquid metal layer submitted to an ac magnetic field. Experimentally, we have noticed that even if the system (inductor+liquid metal) is axisymmetric, when an ac magnetic field is applied the symmetry is broken. The observed deformations of the liquid metal are in three dimensions. Therefore, our aim is to investigate this deformation using a numerical method as boundary element method in three dimensions

  1. Evaluation of different finish line designs in base metal alloys

    Directory of Open Access Journals (Sweden)

    Aghandeh R

    1999-06-01

    Full Text Available This investigation was performed according to the widespread application of base metal alloys"nand few articles published about the marginal integrity of restorations fabricated by these metals."nThree standard dies of a maxillary first premolar were prepared with a flat shoulder finish line in buccal"naspect and chamfer in palatal. One of them left with no change. On the buccal aspect of the second and"nthird dies 135?and 1607 bevel were added respectively"nUsing dual wax technique, nine wax patterns were formed on each die and casting procedure of selected"nnon precious alloy was performed by centrifugal method. Marginal gaps of each copping seated on dies"nwere measured by scanning electron microscope (SEM with X500 magnification. Measurements were"ndone on three areas of marked dies on buccal aspect. Measurement son palatal aspect was done on"nmarked midpalatal point as control."nResults and statistical analysis showed no significant difference among marginal gaps in lingual aspect."nBut on the buccal aspect there were statistically significant differences among the groups (P<0.001. Flat"nshoulder had the best marginal integrity (mean 4 micron. Shoulder with 160' bevel had the most marginal"ngap (mean 26.5 micron and shoulder with 1357 bevel was between two other groups (mean 15.7 micron.

  2. Linear arrangement of metallic and superconducting defects in a thin superconducting sample

    International Nuclear Information System (INIS)

    Barba-Ortega, J.; Sardella, Edson; Albino Aguiar, J.

    2013-01-01

    Highlights: • We study the influence of superconducting and metallic defects on the vortex configurations in a thin mesoscopic disk. • We found that the vortex–defect interaction leads to interesting vortex configurations. • The first vortex entry is always (never) found sitting on the metallic (superconducting) defect position. -- Abstract: The vortex matter in a superconducting disk with a linear configuration of metallic and superconducting defects is studied. Effects associated to the pinning (anti-pinning) force of the metallic (superconducting) defect on the vortex configuration and on the thermodynamic critical fields are analyzed in the framework of the Ginzburg Landau theory. We calculate the loop of the magnetization, vorticity and free energy curves as a function of the magnetic field for a thin disk. Due to vortex–defect attraction for a metallic defect (repulsion for a superconducting defect), the vortices always (never) are found to be sitting on the defect position

  3. Selective removal of heavy metals from metal-bearing wastewater in a cascade line reactor.

    Science.gov (United States)

    Pavlović, Jelena; Stopić, Srećko; Friedrich, Bernd; Kamberović, Zeljko

    2007-11-01

    This paper is a part of the research work on 'Integrated treatment of industrial wastes towards prevention of regional water resources contamination - INTREAT' the project. It addresses the environmental pollution problems associated with solid and liquid waste/effluents produced by sulfide ore mining and metallurgical activities in the Copper Mining and Smelting Complex Bor (RTB-BOR), Serbia. However, since the minimum solubility for the different metals usually found in the polluted water occurs at different pH values and the hydroxide precipitates are amphoteric in nature, selective removal of mixed metals could be achieved as the multiple stage precipitation. For this reason, acid mine water had to be treated in multiple stages in a continuous precipitation system-cascade line reactor. All experiments were performed using synthetic metal-bearing effluent with chemical a composition similar to the effluent from open pit, Copper Mining and Smelting Complex Bor (RTB-BOR). That effluent is characterized by low pH (1.78) due to the content of sulfuric acid and heavy metals, such as Cu, Fe, Ni, Mn, Zn with concentrations of 76.680, 26.130, 0.113, 11.490, 1.020 mg/dm3, respectively. The cascade line reactor is equipped with the following components: for feeding of effluents, for injection of the precipitation agent, for pH measurements and control, and for removal of the process gases. The precipitation agent was 1M NaOH. In each of the three reactors, a changing of pH and temperature was observed. In order to verify. efficiency of heavy metals removal, chemical analyses of samples taken at different pH was done using AES-ICP. Consumption of NaOH in reactors was 370 cm3, 40 cm3 and 80 cm3, respectively. Total time of the experiment was 4 h including feeding of the first reactor. The time necessary to achieve the defined pH value was 25 min for the first reactor and 13 min for both second and third reactors. Taking into account the complete process in the cascade line

  4. Thin Glass Coatings for the Corrosion Protection of Metals

    DEFF Research Database (Denmark)

    Lampert, Felix

    in corrosion sensitive applications. Since the deposition of SiOx thin films is a well-established technology, the SOG technology was directly benchmarked to PVD-based SiO2 coatings. The coating adhesion was assessed by cross cut testing and increasing load scratch testing and the efficiency of the sub...... with localized corrosion and do not impact the heat transfer or the component performance. The herein presented approach focuses primarily on the formation of SiOx-like thin films from Hydrogen Silsesquioxane (HSQ) –based “spin-on-glass” (SOG) precursor. The technology is well known for the deposition...

  5. Ultra-thin Metal and Dielectric Layers for Nanophotonic Applications

    DEFF Research Database (Denmark)

    Shkondin, Evgeniy; Leandro, Lorenzo; Malureanu, Radu

    2015-01-01

    In our talk we first give an overview of the various thin films used in the field of nanophotonics. Then we describe our own activity in fabrication and characterization of ultra-thin films of high quality. We particularly focus on uniform gold layers having thicknesses down to 6 nm fabricated by......-beam deposition on dielectric substrates and Al-oxides/Ti-oxides multilayers prepared by atomic layer deposition in high aspect ratio trenches. In the latter case we show more than 1:20 aspect ratio structures can be achieved....

  6. Preparation and characterization of metallic supported thin Pd-Ag membranes for hydrogen separation

    OpenAIRE

    Fernandez, Ekain; Medrano, Jose Antonio; Melendez, Jon; Parco, Maria; Viviente, J.L.; van Sint Annaland, Martin; Gallucci, Fausto; Pacheco Tanaka, David A.

    2015-01-01

    This paper reports the preparation and characterization of thin-film (4-5 µm thick) Pd-Ag metallic supported membranes for high temperature applications. Various thin film membranes have been prepared by depositing a ceramic interdiffusion barrier layer prior to the simultaneous Pd-Ag electroless plating deposition. Two deposition techniques for ceramic layers (made of zirconia and alumina) have been evaluated: atmospheric plasma spraying and dip coating of a powder suspension. Initially, the...

  7. Ion exchange of alkaline metals on the thin-layer zinc ferrocyanide

    International Nuclear Information System (INIS)

    Betenekov, N.D.; Buklanov, G.V.; Ipatova, E.G.; Korotkin, Yu.S.

    1991-01-01

    Basic regularities of interphase distribution in the system of thin-layer sorbent on the basis of mixed zinc ferrocyanide (FZ)-alkaline metal solution (Na, K, Rb, Cs, Fr) in the column chromatography made are studied. It is established that interphase distribution of microgram amounts of alkaline metals in the systems thin-layer FZ-NH 4 NO 3 electrolyte solutions is of ion-exchange character and subjected to of law effective mass. It is shown that FZ thin-layer material is applicable for effective chromatographic separation of alkaline metal trace amounts. An approach to the choice of a conditions of separate elution of Na, K, Rb, Cs, Fr in the column chromatography mode

  8. Implantable polymer/metal thin film structures for the localized treatment of cancer by Joule heating

    Science.gov (United States)

    Kan-Dapaah, Kwabena; Rahbar, Nima; Theriault, Christian; Soboyejo, Wole

    2015-04-01

    This paper presents an implantable polymer/metal alloy thin film structure for localized post-operative treatment of breast cancer. A combination of experiments and models is used to study the temperature changes due to Joule heating by patterned metallic thin films embedded in poly-dimethylsiloxane. The heat conduction within the device and the surrounding normal/cancerous breast tissue is modeled with three-dimensional finite element method (FEM). The FEM simulations are used to explore the potential effects of device geometry and Joule heating on the temperature distribution and lesion (thermal dose). The FEM model is validated using a gel model that mimics biological media. The predictions are also compared to prior results from in vitro studies and relevant in vivo studies in the literature. The implications of the results are discussed for the potential application of polymer/metal thin film structures in hyperthermic treatment of cancer.

  9. Deposition of metal chalcogenide thin films by successive ionic layer

    Indian Academy of Sciences (India)

    ) method, has emerged as one of the solution methods to deposit a variety of compound materials in thin film form. The SILAR method is inexpensive, simple and convenient for large area deposition. A variety of substrates such as insulators, ...

  10. Determination of magnetic properties of multilayer metallic thin films

    International Nuclear Information System (INIS)

    Birlikseven, C.

    2000-01-01

    In recent year, Giant Magnetoresistance Effect has been attracting an increasingly high interest. High sensitivity magnetic field detectors and high sensitivity read heads of magnetic media can be named as important applications of these films. In this work, magnetic and electrical properties of single layer and thin films were investigated. Multilayer thin films were supplied by Prof. Dr. A. Riza Koeymen from Texas University. Multilayer magnetic thin films are used especially for magnetic reading and magnetic writing. storing of large amount of information into small areas become possible with this technology. Single layer films were prepared using the electron beam evaporation technique. For the exact determination of film thicknesses, a careful calibration of the thicknesses was made. Magnetic properties of the multilayer films were studied using the magnetization, magnetoresistance measurements and ferromagnetic resonance technique. Besides, by fitting the experimental results to the theoretical models, effective magnetization and angles between the ferromagnetic layers were calculated. The correspondence between magnetization and magnetoresistance was evaluated. To see the effect of anisotropic magnetoresistance in the magnetoresistance measurements, a new experimental set-up was build and measurements were taken in this set-up. A series of soft permalloy thin films were made, and temperature dependent resistivity, magnetoresistance, anisotropic magnetoresistance and magnetization measurements were taken

  11. Copper Benzenetricarboxylate Metal-Organic Framework Nucleation Mechanisms on Metal Oxide Powders and Thin Films formed by Atomic Layer Deposition.

    Science.gov (United States)

    Lemaire, Paul C; Zhao, Junjie; Williams, Philip S; Walls, Howard J; Shepherd, Sarah D; Losego, Mark D; Peterson, Gregory W; Parsons, Gregory N

    2016-04-13

    Chemically functional microporous metal-organic framework (MOF) crystals are attractive for filtration and gas storage applications, and recent results show that they can be immobilized on high surface area substrates, such as fiber mats. However, fundamental knowledge is still lacking regarding initial key reaction steps in thin film MOF nucleation and growth. We find that thin inorganic nucleation layers formed by atomic layer deposition (ALD) can promote solvothermal growth of copper benzenetricarboxylate MOF (Cu-BTC) on various substrate surfaces. The nature of the ALD material affects the MOF nucleation time, crystal size and morphology, and the resulting MOF surface area per unit mass. To understand MOF nucleation mechanisms, we investigate detailed Cu-BTC MOF nucleation behavior on metal oxide powders and Al2O3, ZnO, and TiO2 layers formed by ALD on polypropylene substrates. Studying both combined and sequential MOF reactant exposure conditions, we find that during solvothermal synthesis ALD metal oxides can react with the MOF metal precursor to form double hydroxy salts that can further convert to Cu-BTC MOF. The acidic organic linker can also etch or react with the surface to form MOF from an oxide metal source, which can also function as a nucleation agent for Cu-BTC in the mixed solvothermal solution. We discuss the implications of these results for better controlled thin film MOF nucleation and growth.

  12. Phase coexistence in the metal-insulator transition of a VO2 thin film

    International Nuclear Information System (INIS)

    Chang, Y.J.; Koo, C.H.; Yang, J.S.; Kim, Y.S.; Kim, D.H.; Lee, J.S.; Noh, T.W.; Kim, Hyun-Tak; Chae, B.G.

    2005-01-01

    Vanadium dioxide (VO 2 ) shows a metal-insulator transition (MIT) near room temperature, accompanied by an abrupt resistivity change. Since the MIT of VO 2 is known to be a first order phase transition, it is valuable to check metallic and insulating phase segregation during the MIT process. We deposited (100)-oriented epitaxial VO 2 thin films on R-cut sapphire substrates. From the scanning tunneling spectroscopy (STS) spectra, we could distinguish metallic and insulating regions by probing the band gap. Optical spectroscopic analysis also supported the view that the MIT in VO 2 occurs through metal and insulator phase coexistence

  13. Electronic hybridisation implications for the damage-tolerance of thin film metallic glasses.

    Science.gov (United States)

    Schnabel, Volker; Jaya, B Nagamani; Köhler, Mathias; Music, Denis; Kirchlechner, Christoph; Dehm, Gerhard; Raabe, Dierk; Schneider, Jochen M

    2016-11-07

    A paramount challenge in materials science is to design damage-tolerant glasses. Poisson's ratio is commonly used as a criterion to gauge the brittle-ductile transition in glasses. However, our data, as well as results in the literature, are in conflict with the concept of Poisson's ratio serving as a universal parameter for fracture energy. Here, we identify the electronic structure fingerprint associated with damage tolerance in thin film metallic glasses. Our correlative theoretical and experimental data reveal that the fraction of bonds stemming from hybridised states compared to the overall bonding can be associated with damage tolerance in thin film metallic glasses.

  14. Electromagnetic confinement and movement of thin sheets of molten metal

    Science.gov (United States)

    Lari, Robert J.; Praeg, Walter F.; Turner, Larry R.

    1990-01-01

    An apparatus capable of producing a combination of magnetic fields that can retain a metal in liquid form in a region having a smooth vertical boundary including a levitation magnet that produces low frequency magnetic field traveling waves to retain the metal and a stabilization magnet that produces a high frequency magnetic field to produce a smooth vertical boundary. As particularly adapted to the casting of solid metal sheets, a metal in liquid form can be continuously fed into one end of the confinement region produced by the levitation and stabilization magnets and removed in solid form from the other end of confinement region. An additional magnet may be included for support at the edges of the confinement region where eddy currents loop.

  15. Electrochemical characterization of Zr-based thin film metallic glass in hydrochloric aqueous solution

    International Nuclear Information System (INIS)

    Chuang, Ching-Yen; Liao, Yi-Chia; Lee, Jyh-Wei; Li, Chia-Lin; Chu, Jinn P.; Duh, Jenq-Gong

    2013-01-01

    Recently thin film metallic glass represents a class of promising engineering materials for structural applications. In this work, the Zr-based thin film metallic glass (TFMG) was fabricated on the Si and AISI 420 substrates using a Zr–Cu–Ni–Al alloy and pure Zr metal targets by a pulsed DC magnetron sputtering system. The chemical compositions, crystalline structures, microstructures and corrosion behavior in hydrochloric (HCl) aqueous solutions of Zr-based TFMGs were investigated. The results showed that the surface morphologies of Zr-based TFMG were very smooth. A compact and dense structure without columnar structure was observed. The amorphous structure of Zr-based TFMG was characterized by the X-ray diffractometer and transmission electron microscopy analyses. After the potentiodynamic polarization test, the better corrosion resistance was achieved for the Zr-based TFMG coated AISI 420 in 1 mM HCl aqueous solution. Based on the surface morphologies and chemical analysis results of the corroded surfaces, the pitting, crevice corrosion and filiform corrosion were found. The corrosion mechanisms of the Zr-based TFMG were discussed in this work. - Highlights: ► Zr-based thin film metallic glass with amorphous structure. ► Better corrosion resistance of Zr-based thin film metallic glass observed. ► Pitting, crevice and filiform corrosion reactions revealed. ► The Cu-rich corrosion products found in the pit. ► Nanowire and flaky corrosion products formed adjacent to the filiform corrosion path

  16. Metal thin film growth on multimetallic surfaces: From quaternary metallic glass to binary crystal

    Energy Technology Data Exchange (ETDEWEB)

    Jing, Dapeng [Iowa State Univ., Ames, IA (United States)

    2010-01-01

    The work presented in this thesis mainly focuses on the nucleation and growth of metal thin films on multimetallic surfaces. First, we have investigated the Ag film growth on a bulk metallic glass surface. Next, we have examined the coarsening and decay of bilayer Ag islands on NiAl(110) surface. Third, we have investigated the Ag film growth on NiAl(110) surface using low-energy electron diffraction (LEED). At last, we have reported our investigation on the epitaxial growth of Ni on NiAl(110) surface. Some general conclusions can be drawn as follows. First, Ag, a bulk-crystalline material, initially forms a disordered wetting layer up to 4-5 monolayers on Zr-Ni-Cu-Al metallic glass. Above this coverage, crystalline 3D clusters grow, in parallel with the flatter regions. The cluster density increases with decreasing temperature, indicating that the conditions of island nucleation are far-from-equilibrium. Within a simple model where clusters nucleate whenever two mobile Ag adatoms meet, the temperature-dependence of cluster density yields a (reasonable) upper limit for the value of the Ag diffusion barrier on top of the Ag wetting layer of 0.32 eV. Overall, this prototypical study suggests that it is possible to grow films of a bulk-crystalline metal that adopt the amorphous character of a glassy metal substrate, if film thickness is sufficiently low. Next, the first study of coarsening and decay of bilayer islands has been presented. The system was Ag on NiAl(110) in the temperature range from 185 K to 250 K. The coarsening behavior, has some similarities to that seen in the Ag(110) homoepitaxial system studied by Morgenstern and co-workers. At 185 K and 205 K, coarsening of Ag islands follows a Smoluchowski ripening pathway. At 205 K and 250 K, the terrace diffusion limited Ostwald ripening dominants. The experimental observed temperature for the transition from SR to OR is 205 K. The SR exhibits anisotropic island diffusion and the OR exhibits 1D decay of island

  17. Transport measurements on superconducting YBa2Cu3O7-δ thin film lines

    International Nuclear Information System (INIS)

    Moeckly, B.H.; Lathrop, D.K.; Redinbo, G.F.; Russek, S.E.; Buhrman, R.A.

    1990-01-01

    Critical current densities, magnetic field response, and microwave response have been measured for laser ablated YBa 2 Cu 3 O 7-δ thin film lines on MgO and SrTiO 3 substrates. Films on SrTiO 3 have critical current densities > 1 x 10 6 A/cm 2 at 77 K and show uniform transport properties in lines of all sizes. Films on MgO have critical current densities which range between 10 2 and 10 6 A/cm 2 at 77 K and show considerable variation from device to device on the same chip. Narrow lines on MgO with low critical current densities show Josephson weak link structure which includes RSJ-like IV curves, microwave induced constant voltage steps, and a high sensitivity to magnetic field. The presence of the Josephson weak links if correlated with small amounts of misaligned grains in film on MgO

  18. Conduction noise absorption by ITO thin films attached to microstrip line utilizing Ohmic loss

    International Nuclear Information System (INIS)

    Kim, Sun-Hong; Kim, Sung-Soo

    2010-01-01

    For the aim of wide-band noise absorbers with a special design for low frequency performance, this study proposes conductive indium-tin oxide (ITO) thin films as the absorbent materials in microstrip line. ITO thin films were deposited on the polyimide film substrates by rf magnetron cosputtering of In 2 O 3 and Sn targets. The deposited ITO films show a typical value of electrical resistivity (∼10 -4 Ω m) and sheet resistance can be controlled in the range of 20-230 Ω by variation in film thickness. Microstrip line with characteristic impedance of 50 Ω was used for determining their noise absorbing properties. It is found that there is an optimum sheet resistance of ITO films for the maximum power absorption. Reflection parameter (S 11 ) is increased with decrease in sheet resistance due to impedance mismatch. On the while, transmission parameter (S 21 ) is decreased with decrease in sheet resistance due to larger Ohmic loss of the ITO films. Experimental results and computational prediction show that the optimum sheet resistance is about 100 Ω. For this film, greater power absorption is predicted in the lower frequency region than ferrite thin films of high magnetic loss, which indicates that Ohmic loss is the predominant loss parameter for power absorption in the low frequency range.

  19. Thin HTSC films produced by a polymer metal precursor technique

    Science.gov (United States)

    Lampe, L. v.; Zygalsky, F.; Hinrichsen, G.

    In precursors the metal ions are combined with acid groups of polymethacrylic acid (PMAA), polyacrylic acid (PAA) or novolac. Compared to thermal degradation temperature of pure polymers those of precursors are low. Precursors films were patterned by UV lithography. Diffractometric investigations showed that the c-axis oriented epitaxial films of YBa 2Cu 3O x and Bi 2Sr 2CaCu 2O x originated from amorphous metal oxide films, which were received after thermal degradation of the precursor. Transition temperatures and current densities were determined by electric resistivity measurements.

  20. Ferromagnetism and interlayer exchange coupling in thin metallic films

    Energy Technology Data Exchange (ETDEWEB)

    Kienert, Jochen

    2008-07-15

    This thesis is concerned with the ferromagnetic Kondo lattice (s-d,s-f) model for film geometry. The spin-fermion interaction of this model refers to substances in which localized spins interact with mobile charge carriers like in (dilute) magnetic semiconductors, manganites, or rare-earth compounds. The carrier-mediated, indirect interaction between the localized spins comprises the long-range, oscillatory RKKY exchange interaction in the weak-coupling case and the short-range doubleexchange interaction for strong spin-fermion coupling. Both limits are recovered in this work by mapping the problem onto an effective Heisenberg model. The influence of reduced translational symmetry on the effective exchange interaction and on the magnetic properties of the ferromagnetic Kondo lattice model is investigated. Curie temperatures are obtained for different parameter constellations. The consequences of charge transfer and of lattice relaxation on the magnetic stability at the surface are considered. Since the effective exchange integrals are closely related to the electronic structure in terms of the density of states and of the kinetic energy, the discussion is based on the modifications of these quantities in the dimensionally-reduced case. The important role of spin waves for thin film and surface magnetism is demonstrated. Interlayer exchange coupling represents a particularly interesting and important manifestation of the indirect interaction among localized magnetic moments. The coupling between monatomic layers in thin films is studied in the framework of an RKKY approach. It is decisively determined by the type of in-plane and perpendicular dispersion of the charge carriers and is strongly suppressed above a critical value of the Fermi energy. Finally, the temperature-dependent magnetic stability of thin interlayer-coupled films is addressed and the conditions for a temperature-driven magnetic reorientation transition are discussed. (orig.)

  1. Thin films of molecular metals TTF-TCNQ

    International Nuclear Information System (INIS)

    Fraxedas, J.; Molas, S.; Figueras, A.; Jimenez, I.; Gago, R.; Auban-Senzier, P.; Goffman, M.

    2002-01-01

    We present recent results on the characterization of highly ordered polycrystalline thin films of the charge transfer salt TTF-TCNQ (TTF=tetrathiafulvalene, TCNQ=tetracyanoquinodimethane) prepared by thermal sublimation in high vacuum under different conditions. The increase in orientation and microcrystal size as a function of substrate and annealing temperatures is addressed. A consequence of such an increase is the reduction of the conductivity activation energy, which eventually leads to the observation of the Peierls transition by resistivity measurements. X-ray absorption near edge spectroscopy studies performed with synchrotron radiation reveal directly the influence of charge transfer on unoccupied states near the Fermi level

  2. Thin films of molecular metals TTF-TCNQ

    CERN Document Server

    Fraxedas, J; Figueras, A; Jimenez, I; Gago, R; Auban-Senzier, P; Goffman, M

    2002-01-01

    We present recent results on the characterization of highly ordered polycrystalline thin films of the charge transfer salt TTF-TCNQ (TTF=tetrathiafulvalene, TCNQ=tetracyanoquinodimethane) prepared by thermal sublimation in high vacuum under different conditions. The increase in orientation and microcrystal size as a function of substrate and annealing temperatures is addressed. A consequence of such an increase is the reduction of the conductivity activation energy, which eventually leads to the observation of the Peierls transition by resistivity measurements. X-ray absorption near edge spectroscopy studies performed with synchrotron radiation reveal directly the influence of charge transfer on unoccupied states near the Fermi level.

  3. Rare earth metals, rare earth hydrides, and rare earth oxides as thin films

    International Nuclear Information System (INIS)

    Gasgnier, M.

    1980-01-01

    The review deals with pure rare earth materials such as rare earth metals, rare earth hydrides, and rare earth oxides as thin films. Several preparation techniques, control methods, and nature of possible contaminations of thin films are described. These films can now be produced in an extremely well-known state concerning chemical composition, structure and texture. Structural, electric, magnetic, and optical properties of thin films are studied and discussed in comparison with the bulk state. The greatest contamination of metallic rare earth thin films is caused by reaction with hydrogen or with water vapour. The compound with an f.c.c. structure is the dihydride LnH 2 (Ln = lanthanides). The oxygen contamination takes place after annealing at higher temperatures. Then there appears a compound with a b.c.c. structure which is the C-type sesquioxide C-Ln 2 O 3 . At room atmosphere dihydride light rare earth thin films are converted to hydroxide Ln(OH) 3 . For heavy rare earth thin films the oxinitride LnNsub(x)Osub(y) is observed. The LnO-type compound was never seen. The present review tries to set the stage anew for the investigations to be undertaken in the future especially through the new generations of electron microscopes

  4. Numerical analysis of short-pulse laser interactions with thin metal film

    Directory of Open Access Journals (Sweden)

    E. Majchrzak

    2010-10-01

    Full Text Available Thin metal film subjected to a short-pulse laser heating is considered. The hyperbolic two-temperature model describing the temporal andspatial evolution of the lattice and electrons temperatures is discussed. At the stage of numerical computations the finite difference method is used. In the final part of the paper the examples of computations are shown.

  5. Plasma Processing of Metallic and Semiconductor Thin Films in the Fisk Plasma Source

    Science.gov (United States)

    Lampkin, Gregory; Thomas, Edward, Jr.; Watson, Michael; Wallace, Kent; Chen, Henry; Burger, Arnold

    1998-01-01

    The use of plasmas to process materials has become widespread throughout the semiconductor industry. Plasmas are used to modify the morphology and chemistry of surfaces. We report on initial plasma processing experiments using the Fisk Plasma Source. Metallic and semiconductor thin films deposited on a silicon substrate have been exposed to argon plasmas. Results of microscopy and chemical analyses of processed materials are presented.

  6. Thin film pc-Si by aluminium induced crystallization on metallic substrate

    Directory of Open Access Journals (Sweden)

    Cayron C.

    2013-04-01

    Full Text Available Thin film polycrystalline silicon (pc-Si on flexible metallic substrates is promising for low cost production of photovoltaic solar cells. One of the attractive methods to produce pc-Si solar cells consists in thickening a large-grained seed layer by epitaxy. In this work, the deposited seed layer is made by aluminium induced crystallization (AIC of an amorphous silicon (a-Si thin film on metallic substrates (Ni/Fe alloy initially coated with a tantalum nitride (TaN conductive diffusion barrier layer. Effect of the thermal budget on the AIC grown pc-Si seed layer was investigated in order to optimize the process (i.e. the quality of the pc-Si thin film. Structural and optical characterizations were carried out using optical microscopy, μ-Raman and Electron Backscatter Diffraction (EBSD. At optimal thermal annealing conditions, the continuous AIC grown pc-Si thin film showed an average grain size around 15 μm. The grains were preferably (001 oriented which is favorable for its epitaxial thickening. This work proves the feasibility of the AIC method to grow large grains pc-Si seed layer on TaN coated metal substrates. These results are, in terms of grains size, the finest obtained by AIC on metallic substrates.

  7. Effects of accelerated degradation on metal supported thin film-based solid oxide fuel cell

    DEFF Research Database (Denmark)

    Reolon, R. P.; Sanna, S.; Xu, Yu

    2018-01-01

    A thin film-based solid oxide fuel cell is deposited on a Ni-based metal porous support by pulsed laser deposition with a multi-scale-graded microstructure design. The fuel cell, around 1 μm in thickness, is composed of a stabilized-zirconia/doped-ceria bi-layered dense electrolyte and nanostruct......A thin film-based solid oxide fuel cell is deposited on a Ni-based metal porous support by pulsed laser deposition with a multi-scale-graded microstructure design. The fuel cell, around 1 μm in thickness, is composed of a stabilized-zirconia/doped-ceria bi-layered dense electrolyte......, electrochemical performances are steady, indicating the stability of the cell. Under electrical load, a progressive degradation is activated. Post-test analysis reveals both mechanical and chemical degradation of the cell. Cracks and delamination of the thin films promote a significant nickel diffusion and new...

  8. Elaboration of strontium ruthenium oxide thin films on metal substrates by chemical solution deposition

    Energy Technology Data Exchange (ETDEWEB)

    Seveno, R. [Universite de Nantes, Institut de Recherche en Electrotechnique et Electronique de Nantes Atlantique (IREENA), 2, rue de la Houssiniere, BP 92208, 44322 Nantes Cedex 3 (France)]. E-mail: raynald.seveno@univ-nantes.fr; Braud, A. [Universite de Nantes, Institut de Recherche en Electrotechnique et Electronique de Nantes Atlantique (IREENA), 2, rue de la Houssiniere, BP 92208, 44322 Nantes Cedex 3 (France); Gundel, H.W. [Universite de Nantes, Institut de Recherche en Electrotechnique et Electronique de Nantes Atlantique (IREENA), 2, rue de la Houssiniere, BP 92208, 44322 Nantes Cedex 3 (France)

    2005-12-22

    In order to improve the structural interface between a metal substrate and a lead zirconate titanate (Pb(ZrTi)O{sub 3}, PZT) ferroelectric thin film, the elaboration of strontium ruthenium oxide (SrRuO{sub 3}) by chemical solution deposition is studied. The SrRuO{sub 3} thin films were realized by multiple spin-coating technique and the temperature of the rapid thermal annealing process was optimized. The crystallization behavior was examined by X-ray diffraction; surface analyses using scanning electron microscope and atomic force microscope techniques showed the influence of the SrRuO{sub 3} layer at the interface PZT/metal on the morphology of the ferroelectric thin film. From the electrical measurements, a coercive electric field around 25 kV/cm and a remanent polarization of approximately 30 {mu}C/cm were found.

  9. Elaboration of strontium ruthenium oxide thin films on metal substrates by chemical solution deposition

    International Nuclear Information System (INIS)

    Seveno, R.; Braud, A.; Gundel, H.W.

    2005-01-01

    In order to improve the structural interface between a metal substrate and a lead zirconate titanate (Pb(ZrTi)O 3 , PZT) ferroelectric thin film, the elaboration of strontium ruthenium oxide (SrRuO 3 ) by chemical solution deposition is studied. The SrRuO 3 thin films were realized by multiple spin-coating technique and the temperature of the rapid thermal annealing process was optimized. The crystallization behavior was examined by X-ray diffraction; surface analyses using scanning electron microscope and atomic force microscope techniques showed the influence of the SrRuO 3 layer at the interface PZT/metal on the morphology of the ferroelectric thin film. From the electrical measurements, a coercive electric field around 25 kV/cm and a remanent polarization of approximately 30 μC/cm were found

  10. Fabrication of metallic nanomasks by transfer of self-organized nanodot patterns from semiconductor material into thin metallic layers

    International Nuclear Information System (INIS)

    Bobek, T.; Kurz, H.

    2007-01-01

    The basic understanding of the formation of highly regular nanostructures during ion erosion of amorphous GaSb layers is revised. The essential physical parameters for the formation of the highly regular dot pattern are discussed. Numerical modelling based on the stabilized isotropic Kuramoto-Sivashinsky equation is presented and discussed. The experimental part of this contribution presents the successful pattern transfer into metallic buried thin layers as well as into Silicon underlayers. The critical conditions for this transfer technique are discussed. Application potential of using this self-organization scheme for the generation of highly regular patterns in ferromagnetic metal layers as well as in crystalline silicon is estimated

  11. Designable ultra-smooth ultra-thin solid-electrolyte interphases of three alkali metal anodes.

    Science.gov (United States)

    Gu, Yu; Wang, Wei-Wei; Li, Yi-Juan; Wu, Qi-Hui; Tang, Shuai; Yan, Jia-Wei; Zheng, Ming-Sen; Wu, De-Yin; Fan, Chun-Hai; Hu, Wei-Qiang; Chen, Zhao-Bin; Fang, Yuan; Zhang, Qing-Hong; Dong, Quan-Feng; Mao, Bing-Wei

    2018-04-09

    Dendrite growth of alkali metal anodes limited their lifetime for charge/discharge cycling. Here, we report near-perfect anodes of lithium, sodium, and potassium metals achieved by electrochemical polishing, which removes microscopic defects and creates ultra-smooth ultra-thin solid-electrolyte interphase layers at metal surfaces for providing a homogeneous environment. Precise characterizations by AFM force probing with corroborative in-depth XPS profile analysis reveal that the ultra-smooth ultra-thin solid-electrolyte interphase can be designed to have alternating inorganic-rich and organic-rich/mixed multi-layered structure, which offers mechanical property of coupled rigidity and elasticity. The polished metal anodes exhibit significantly enhanced cycling stability, specifically the lithium anodes can cycle for over 200 times at a real current density of 2 mA cm -2 with 100% depth of discharge. Our work illustrates that an ultra-smooth ultra-thin solid-electrolyte interphase may be robust enough to suppress dendrite growth and thus serve as an initial layer for further improved protection of alkali metal anodes.

  12. On-line monitoring of wear and/or corrosion processes by thin layer activation technique

    International Nuclear Information System (INIS)

    Alexandreanu, B.; Popa-Simil, L.; Voiculescu, D.; Racolta, P.M.

    1995-01-01

    The Thin Layer Activation (TLA) principle consists in creating a radioactive layer by ion beam irradiation of a machine part subjected to wear. The method is based on the determination of the increasing radioactivity in the lubricant due to suspended wear particles and has a sensitivity threshold of about 40 μ g / cm 2 . The most used radioactive markers are 56 Co, 57 Co, 65 Zn, 51 Cr, 48 V, 124 Sb. In this paper, we have chosen to present an on-line wear level determination experiment performed for a thermal engine. The study of possible influence of a SR3 added lubricant upon the wear level of a Dacia 1410 car engine is presented, illustrating the on-line TLA based monitoring of wear for industrial uses. The examples presented outline the advantages of this method over the conventional one, like the fast response and the high sensitivity, while no dismantling of the engine is implied. (author)

  13. Deposition and Characterization of Thin Films on Metallic Substrates

    Science.gov (United States)

    Gatica, Jorge E.

    2005-01-01

    A CVD method was successfully developed to produce conversion coatings on aluminum alloys surfaces with reproducible results with a variety of precursors. A well defined protocol to prepare the precursor solutions formulated in a previous research was extended to other additives. It was demonstrated that solutions prepared following such a protocol could be used to systematically generate protective coatings onto aluminum surfaces. Experiments with a variety of formulations revealed that a refined deposition protocol yields reproducible conversion coatings of controlled composition. A preliminary correlation between solution formulations and successful precursors was derived. Coatings were tested for adhesion properties enhancement for commercial paints. A standard testing method was followed and clear trends were identified. Only one precursors was tested systematically. Anticipated work on other precursors should allow a better characterization of the effect of intermetallics on the production of conversion/protective coatings on metals and ceramics. The significance of this work was the practical demonstration that chemical vapor deposition (CVD) techniques can be used to systematically generate protective/conversion coating on non-ferrous surfaces. In order to become an effective approach to replace chromate-based pre- treatment processes, namely in the aerospace or automobile industry, the process parameters must be defined more precisely. Moreover, the feasibility of scale-up designs necessitates a more comprehensive characterization of the fluid flow, transport phenomena, and chemical kinetics interacting in the process. Kinetic characterization showed a significantly different effect of magnesium-based precursors when compared to iron-based precursors. Future work will concentrate on refining the process through computer simulations and further experimental studies on the effect of other transition metals to induce deposition of conversion/protective films

  14. Expandable and retractable self-rolled structures based on metal/polymer thin film for flow sensing

    Science.gov (United States)

    Zhu, Jianzhong; White, Carl; Saadat, Mehdi; Bart-Smith, Hilary

    2015-11-01

    Most aquatic animals such as fish rely heavily on their ability of detect and respond to ambient flows in order to explore and inhabit various habitats or survive predator-prey encounters. Fish utilize neuromasts in their skin surface and lateral lines in their bodies to align themselves while swimming upstream for migration, avoid obstacles, reduce locomotion cost, and detect flow variations caused by potential predators. In this study, a thin film MEMS sensor analogous to a fish neuromast has been designed for flow sensing. Residual stress arises in many thin film materials during processing. Metal and polymer thin film materials with a significant difference in elastic modular were chosen to form a multiple-layer structure. Upon releasing, the structure rolls into a tube due to mechanical property mismatch. The self-rolled tube can expand or retract, depending on the existence of external force such as flow. An embedded strain sensor detects the deformation of the tube and hence senses the ambient flow. Numerical simulations were conducted to optimize the structural design. Experiments were performed in a flow tank to quantify the performance of the sensor. This research is supported by the Office of Naval Research under the MURI Grant N00014-14-1-0533.

  15. Fabrication of metallic nanoparticles by spinodal dewetting of thin films: A high-throughput approach

    Energy Technology Data Exchange (ETDEWEB)

    Michalak, William D.; Miller, James B. [U.S. Department of Energy, National Energy Technology Laboratory, Pittsburgh, PA 15262 (United States); Department of Chemical Engineering, Carnegie Mellon University, Pittsburgh, PA 15213 (United States); Yolcu, Cem [Department of Physics, Carnegie Mellon University, Pittsburgh, PA 15213 (United States); Gellman, Andrew J., E-mail: gellman@cmu.edu [U.S. Department of Energy, National Energy Technology Laboratory, Pittsburgh, PA 15262 (United States); Department of Chemical Engineering, Carnegie Mellon University, Pittsburgh, PA 15213 (United States)

    2012-11-01

    Metal nanoparticles on structured supports are used in a variety of technological applications including biosensing, energy harvesting, and electronics. In every case, the functions and properties of the metallic nanostructures depend on both their composition and structure (i.e. size, shape, and spatial distribution). Among the challenges to the development of metal nanoparticles for these applications is the characterization of relationships between their structure and their functional properties over multiple structural degrees of freedom spanning a large range of values. In this work, a method for creating a morphological gradient of metal nanoparticles on a substrate is described. The approach, suited for high-throughput fabrication and characterization, is based on spinodal dewetting of a metallic thin film from its substrate. Through control of initial film thickness, anneal temperature, and anneal time, spinodal dewetting results in supported nanoparticles with well-defined and controlled structure. The approach is demonstrated through its application to preparation of Pd nanoparticles on a silicon nitride substrate. The morphologies of the particles were characterized by scanning electron and atomic force microscopies. Free energy-based stability and topological analyses were used to confirm the dewetting mechanism. In addition, the stability theory provides a connection to the thermophysical properties of the resulting nanoparticle array. The dewetting approach is general to any metal/support system and provides an alternative, inexpensive, and robust means to rapidly create metal nanostructures with control of morphology. It shows promise for large scale production of metal nanoparticles structures, as well as understanding basic stability properties of thin metal films. - Highlights: Black-Right-Pointing-Pointer Pd dewetting from SiN occurs by a spinodal dewetting mechanism. Black-Right-Pointing-Pointer Dewetting occurs at temperatures well below the

  16. Fabrication of metallic nanoparticles by spinodal dewetting of thin films: A high-throughput approach

    International Nuclear Information System (INIS)

    Michalak, William D.; Miller, James B.; Yolcu, Cem; Gellman, Andrew J.

    2012-01-01

    Metal nanoparticles on structured supports are used in a variety of technological applications including biosensing, energy harvesting, and electronics. In every case, the functions and properties of the metallic nanostructures depend on both their composition and structure (i.e. size, shape, and spatial distribution). Among the challenges to the development of metal nanoparticles for these applications is the characterization of relationships between their structure and their functional properties over multiple structural degrees of freedom spanning a large range of values. In this work, a method for creating a morphological gradient of metal nanoparticles on a substrate is described. The approach, suited for high-throughput fabrication and characterization, is based on spinodal dewetting of a metallic thin film from its substrate. Through control of initial film thickness, anneal temperature, and anneal time, spinodal dewetting results in supported nanoparticles with well-defined and controlled structure. The approach is demonstrated through its application to preparation of Pd nanoparticles on a silicon nitride substrate. The morphologies of the particles were characterized by scanning electron and atomic force microscopies. Free energy-based stability and topological analyses were used to confirm the dewetting mechanism. In addition, the stability theory provides a connection to the thermophysical properties of the resulting nanoparticle array. The dewetting approach is general to any metal/support system and provides an alternative, inexpensive, and robust means to rapidly create metal nanostructures with control of morphology. It shows promise for large scale production of metal nanoparticles structures, as well as understanding basic stability properties of thin metal films. - Highlights: ► Pd dewetting from SiN occurs by a spinodal dewetting mechanism. ► Dewetting occurs at temperatures well below the melting point of Pd. ► Spinodal dewetting allows

  17. Electrical resistivity of thin metal films and multilayers

    International Nuclear Information System (INIS)

    Fenn, M.

    1999-01-01

    The electrical resistivity and temperature coefficient of resistivity (TCR) of thin films and multilayers of Cu, Nb and Zr have been measured over a wide range of layer thicknesses. The structure of the films has been characterised using transmission electron microscopy (TEM) and x-ray reflectivity. The experimental results have been compared with the semiclassical theory due to Dimmich. The values of the grain boundary reflectivity, R, in the single films has been found to be approximately 0.35 for Cu in agreement with the literature. The value of R for Nb and Zr has been found to vary with grain size, although it is approximately 0.55 for Nb and 0.925 for Zr over a wide range of grain sizes, and this is believed to be presented for the first time. The value of the interfacial specularity parameter, p, is not found to have a significant effect compared to R in the single films. Dimmich's theoretical expression for the TCR does not match experiment, but by adapting the resistivity expression of the theory to different temperatures a satisfactory fit has been obtained. It has been concluded that the assumption of the free electron model in the presence of grain boundary scattering is in error. The adapted theory predicts negative TCR in sufficiently thin films with experimentally plausible values of the input parameters, and this is believed to be demonstrated for the first time. The experimental resistivity of the multilayers was much lower than expected from the resistivity of the single films. A theoretical fit to the experimental resistivity and TCR of the multilayers was obtained by adjusting the parameter values obtained from single films, and the value of p was found to be significant. This procedure leads to a contradiction in the value of R for Nb. With a view to extending the above work to magnetic multilayers, an AC susceptometer has been designed, built and tested. The results indicate that this instrument would be suitable for work on magnetic

  18. Keyhole shapes during laser welding of thin metal sheets

    International Nuclear Information System (INIS)

    Aalderink, B J; Lange, D F de; Aarts, R G K M; Meijer, J

    2007-01-01

    Camera observations of the full penetration keyhole laser welding process show that the keyhole shape is elongated under certain welding conditions. Under these unfavourable circumstances, the welding process is susceptible to holes in the weld bead. Existing models of the pressure balance at the keyhole wall cannot explain this keyhole elongation. In this paper a new model is presented, accounting for the doubly curved shape of the keyhole wall. In this model, the surface tension pressure has one term that tends to close the keyhole and another term that tries to open it. Model calculations show that when the keyhole diameter is of the same order as the sheet thickness, the latter part can become dominant, causing the keyhole to elongate. Experiments on thin aluminium (AA5182) and mild steel (DC04) sheets verify these model calculations. As the keyhole radius depends on the radius of the focused laser spot, it was found for both materials that the ratio of the spot radius and the sheet thickness must be above a critical value to prevent keyhole elongation. These critical radii are 0.25 for AA5182 and 0.4 for DC04, respectively. Furthermore, differences in appearance of the weld bead between the circular and the elongated keyhole welds could be explained by this model

  19. Breakdown dynamics of electrically exploding thin metal wires in vacuum

    Science.gov (United States)

    Sarkisov, G. S.; Caplinger, J.; Parada, F.; Sotnikov, V. I.

    2016-10-01

    Using a two-frame intensified charge coupled device (iCCD) imaging system with a 2 ns exposure time, we observed the dynamics of voltage breakdown and corona generation in experiments of fast ns-time exploding fine Ni and stainless-steel (SS) wires in a vacuum. These experiments show that corona generation along the wire surface is subjected to temporal-spatial inhomogeneity. For both metal wires, we observed an initial generation of a bright cathode spot before the ionization of the entire wire length. This cathode spot does not expand with time. For 25.4 μm diameter Ni and SS wire explosions with positive polarity, breakdown starts from the ground anode and propagates to the high voltage cathode with speeds approaching 3500 km/s or approximately one percent of light speed.

  20. Water Splitting by Thin Film Metal-Oxo Catalysts

    Energy Technology Data Exchange (ETDEWEB)

    Nocera, Daniel [Harvard Univ., Cambridge, MA (United States)

    2013-03-15

    The dropping price of silicon photovoltaics in the United States is causing load defection to solar supply at an accelerated pace. This conversion to solar and, more generally, other renewable energy sources has accordingly turned the energy research focus from generation to one of storage. Truly disruptive improvements in energy storage technologies are limited by energy density. This limitation, however, does not apply to fuels, which possess the energy density needed for large-scale energy storage. The first step of the basic science needed to drive such historic restructuring of the U.S. energy infrastructure begins with the solar-driven generation of hydrogen and oxygen from water. The solar-produced hydrogen may then be combined with carbon dioxide to deliver any number of fuels. Obviously, light does not directly act on water to engender its splitting into its elemental components. Hence, catalysts are needed to drive the oxygen evolution reaction (OER) and hydrogen evolution reaction (HER). Of these two reactions, the four-electron, four-proton oxidation of OER is the more kinetically challenging reaction, and therefore the development of energy efficient solar fuels processes demands that OER be accomplished at a minimal overpotential. The research completed in this program developed catalysts that drive OER and at the same time meet the important criteria of (1) using non-critical materials that (2) are easy to assemble and (3) accomplish OER under simple conditions. Research was designed to uncover the chemical principles that underlie the self-assembly of metal oxide oxygen evolving catalysts (M-OEC) from the metals of M = Mn, Co, and Ni. For example, a dogma of heterogeneous catalysis of any sort is that “edges” matter in promoting catalytic transformations. We provided a rationale for such dogma by showing that the OER in Co-OEC occurred at a dimensionally reduced dicobalt edge site. Edge site reactivity was clearly revealed analyzing 18O labeled

  1. Work function and quantum efficiency study of metal oxide thin films on Ag(100)

    Science.gov (United States)

    Chang, V.; Noakes, T. C. Q.; Harrison, N. M.

    2018-04-01

    Increasing the quantum efficiency (QE) of metal photocathodes is in the design and development of photocathodes for free-electron laser applications. The growth of metal oxide thin films on certain metal surfaces has previously been shown to reduce the work function (WF). Using a photoemission model B. Camino et al. [Comput. Mater. Sci. 122, 331 (2016), 10.1016/j.commatsci.2016.05.025] based on the three-step model combined with density functional theory calculations we predict that the growth of a finite number of MgO(100) or BaO(100) layers on the Ag(100) surface increases significantly the QE compared with the clean Ag(100) surface for a photon energy of 4.7 eV. Different mechanisms for affecting the QE are identified for the different metal oxide thin films. The addition of MgO(100) increases the QE due to the reduction of the WF and the direct excitation of electrons from the Ag surface to the MgO conduction band. For BaO(100) thin films, an additional mechanism is in operation as the oxide film also photoemits at this energy. We also note that a significant increase in the QE for photons with an energy of a few eV above the WF is achieved due to an increase in the inelastic mean-free path of the electrons.

  2. Thermal oxidation of Zr–Cu–Al–Ni amorphous metal thin films

    International Nuclear Information System (INIS)

    Oleksak, R.P.; Hostetler, E.B.; Flynn, B.T.; McGlone, J.M.; Landau, N.P.; Wager, J.F.; Stickle, W.F.; Herman, G.S.

    2015-01-01

    The initial stages of thermal oxidation for Zr–Cu–Al–Ni amorphous metal thin films were investigated using X-ray photoelectron spectroscopy, transmission electron microscopy and energy dispersive X-ray spectroscopy. The as-deposited films had oxygen incorporated during sputter deposition, which helped to stabilize the amorphous phase. After annealing in air at 300 °C for short times (5 min) this oxygen was found to segregate to the surface or buried interface. Annealing at 300 °C for longer times leads to significant composition variation in both vertical and lateral directions, and formation of a surface oxide layer that consists primarily of Zr and Al oxides. Surface oxide formation was initially limited by back-diffusion of Cu and Ni ( 30 min). The oxidation properties are largely consistent with previous observations of Zr–Cu–Al–Ni metallic glasses, however some discrepancies were observed which could be explained by the unique sample geometry of the amorphous metal thin films. - Highlights: • Thermal oxidation of amorphous Zr–Cu–Al–Ni thin films was investigated. • Significant short-range inhomogeneities were observed in the amorphous films. • An accumulation of Cu and Ni occurs at the oxide/metal interface. • Diffusion of Zr was found to limit oxide film growth.

  3. Superconductor-Metal-Insulator transition in two dimensional Ta thin Films

    Science.gov (United States)

    Park, Sun-Gyu; Kim, Eunseong

    2013-03-01

    Superconductor-insulator transition has been induced by tuning film thickness or magnetic field. Recent electrical transport measurements of MoGe, Bi, Ta thin films revealed an interesting intermediate metallic phase which intervened superconducting and insulating phases at certain range of magnetic field. Especially, Ta thin films show the characteristic IV behavior at each phase and the disorder tuned intermediate metallic phase [Y. Li, C. L. Vicente, and J. Yoon, Physical Review B 81, 020505 (2010)]. This unexpected metallic phase can be interpreted as a consequence of vortex motion or contribution of fermionic quasiparticles. In this presentation, we report the scaling behavior during the transitions in Ta thin film as well as the transport measurements in various phases. Critical exponents v and z are obtained in samples with wide ranges of disorder. These results reveal new universality class appears when disorder exceeds a critical value. Dynamical exponent z of Superconducting sample is found to be 1, which is consistent with theoretical prediction of unity. z in a metallic sample is suddenly increased to be approximately 2.5. This critical exponent is much larger than the value found in other system and theoretical prediction. We gratefully acknowledge the financial support by the National Research Foundation of Korea through the Creative Research Initiatives.

  4. Nanomechanical investigation of thin-film electroceramic/metal-organic framework multilayers

    Science.gov (United States)

    Best, James P.; Michler, Johann; Liu, Jianxi; Wang, Zhengbang; Tsotsalas, Manuel; Maeder, Xavier; Röse, Silvana; Oberst, Vanessa; Liu, Jinxuan; Walheim, Stefan; Gliemann, Hartmut; Weidler, Peter G.; Redel, Engelbert; Wöll, Christof

    2015-09-01

    Thin-film multilayer stacks of mechanically hard magnetron sputtered indium tin oxide (ITO) and mechanically soft highly porous surface anchored metal-organic framework (SURMOF) HKUST-1 were studied using nanoindentation. Crystalline, continuous, and monolithic surface anchored MOF thin films were fabricated using a liquid-phase epitaxial growth method. Control over respective fabrication processes allowed for tuning of the thickness of the thin film systems with a high degree of precision. It was found that the mechanical indentation of such thin films is significantly affected by the substrate properties; however, elastic parameters were able to be decoupled for constituent thin-film materials (EITO ≈ 96.7 GPa, EHKUST-1 ≈ 22.0 GPa). For indentation of multilayer stacks, it was found that as the layer thicknesses were increased, while holding the relative thickness of ITO and HKUST-1 constant, the resistance to deformation was significantly altered. Such an observation is likely due to small, albeit significant, changes in film texture, interfacial roughness, size effects, and controlling deformation mechanism as a result of increasing material deposition during processing. Such effects may have consequences regarding the rational mechanical design and utilization of MOF-based hybrid thin-film devices.

  5. Nanomechanical investigation of thin-film electroceramic/metal-organic framework multilayers

    Energy Technology Data Exchange (ETDEWEB)

    Best, James P., E-mail: james.best@empa.ch, E-mail: engelbert.redel@kit.edu, E-mail: christof.woell@kit.edu; Michler, Johann; Maeder, Xavier [Empa, Swiss Federal Laboratories for Materials Science and Technology, Laboratory for Mechanics of Materials and Nanostructures, Feuerwerkerstrasse 39, CH-3602 Thun (Switzerland); Liu, Jianxi; Wang, Zhengbang; Tsotsalas, Manuel; Liu, Jinxuan; Gliemann, Hartmut; Weidler, Peter G.; Redel, Engelbert, E-mail: james.best@empa.ch, E-mail: engelbert.redel@kit.edu, E-mail: christof.woell@kit.edu; Wöll, Christof, E-mail: james.best@empa.ch, E-mail: engelbert.redel@kit.edu, E-mail: christof.woell@kit.edu [Institute of Functional Interfaces (IFG), Karlsruhe Institute of Technology (KIT), Hermann-von-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen (Germany); Röse, Silvana [Preparative Macromolecular Chemistry, Institute for Chemical Technology and Polymer Chemistry (ICTP), Karlsruhe Institute of Technology (KIT), Engesserstrasse 18, 76128 Karlsruhe (Germany); Institute for Biological Interfaces (IBG), Karlsruhe Institute of Technology (KIT), Herrmann-von-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen (Germany); Oberst, Vanessa [Institute of Applied Materials (IAM), Karlsruhe Institute of Technology (KIT), Hermann-von-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen (Germany); Walheim, Stefan [Institute of Nanotechnology (INT), Karlsruhe Institute of Technology (KIT), Hermann-von-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen (Germany)

    2015-09-07

    Thin-film multilayer stacks of mechanically hard magnetron sputtered indium tin oxide (ITO) and mechanically soft highly porous surface anchored metal-organic framework (SURMOF) HKUST-1 were studied using nanoindentation. Crystalline, continuous, and monolithic surface anchored MOF thin films were fabricated using a liquid-phase epitaxial growth method. Control over respective fabrication processes allowed for tuning of the thickness of the thin film systems with a high degree of precision. It was found that the mechanical indentation of such thin films is significantly affected by the substrate properties; however, elastic parameters were able to be decoupled for constituent thin-film materials (E{sub ITO} ≈ 96.7 GPa, E{sub HKUST−1} ≈ 22.0 GPa). For indentation of multilayer stacks, it was found that as the layer thicknesses were increased, while holding the relative thickness of ITO and HKUST-1 constant, the resistance to deformation was significantly altered. Such an observation is likely due to small, albeit significant, changes in film texture, interfacial roughness, size effects, and controlling deformation mechanism as a result of increasing material deposition during processing. Such effects may have consequences regarding the rational mechanical design and utilization of MOF-based hybrid thin-film devices.

  6. Nanomechanical investigation of thin-film electroceramic/metal-organic framework multilayers

    International Nuclear Information System (INIS)

    Best, James P.; Michler, Johann; Maeder, Xavier; Liu, Jianxi; Wang, Zhengbang; Tsotsalas, Manuel; Liu, Jinxuan; Gliemann, Hartmut; Weidler, Peter G.; Redel, Engelbert; Wöll, Christof; Röse, Silvana; Oberst, Vanessa; Walheim, Stefan

    2015-01-01

    Thin-film multilayer stacks of mechanically hard magnetron sputtered indium tin oxide (ITO) and mechanically soft highly porous surface anchored metal-organic framework (SURMOF) HKUST-1 were studied using nanoindentation. Crystalline, continuous, and monolithic surface anchored MOF thin films were fabricated using a liquid-phase epitaxial growth method. Control over respective fabrication processes allowed for tuning of the thickness of the thin film systems with a high degree of precision. It was found that the mechanical indentation of such thin films is significantly affected by the substrate properties; however, elastic parameters were able to be decoupled for constituent thin-film materials (E ITO  ≈ 96.7 GPa, E HKUST−1  ≈ 22.0 GPa). For indentation of multilayer stacks, it was found that as the layer thicknesses were increased, while holding the relative thickness of ITO and HKUST-1 constant, the resistance to deformation was significantly altered. Such an observation is likely due to small, albeit significant, changes in film texture, interfacial roughness, size effects, and controlling deformation mechanism as a result of increasing material deposition during processing. Such effects may have consequences regarding the rational mechanical design and utilization of MOF-based hybrid thin-film devices

  7. Many-body calculation of the coincidence L3 photoelectron spectroscopy main line of Ni metal

    International Nuclear Information System (INIS)

    Ohno, Masahide

    2008-01-01

    The partial singles L 3 photoelectron spectroscopy (PES) main line of Ni metal correlated with Auger electrons emitted by the localized L 3 -VV Auger decay is calculated by a many-body theory. The partial singles L 3 PES main line of Ni metal almost coincides in both line shape and peak kinetic energy (KE) with the singles one. The former main line peak shows a KE shift of only 0.01 eV toward the lower KE and a very small asymmetric line shape change compared to the singles one. The asymmetric line shape change and the peak KE shift of the partial singles L 3 main line are very small. However, they are due to the variation with photoelectron KE in the branching ratio of the partial Auger decay width in the partial singles L 3 PES main line by the photoelectron KE dependent imaginary part of the shakeup self-energy. The L 3 PES main line of Ni metal measured in coincidence with the L 3 -VV ( 1 G) Auger electron spectroscopy (AES) main line peak is the partial singles one modulated by a spectral function R a of a fixed energy Auger electron analyzer so that it should show only a symmetric line narrowing by R a compared to the singles one. The L 3 PES main line peak of Ni metal measured in coincidence with the delocalized band-like L 3 -VV AES peak or not completely split-off (or not completely localized) L 3 -VV ( 3 F) AES peak, will show an asymmetric line narrowing and a KE shift compared to the singles one. Thus, the L 3 PES main line of Ni metal in coincidence with various parts of the L 3 -VV AES spectrum depends on which part of the L 3 -VV AES spectrum a fixed energy Auger electron analyzer is set. The experimental verification is in need

  8. Magnetic properties of thin films obtained by ion implantation of 3d metals in polyethylene-terephthalate

    International Nuclear Information System (INIS)

    Petukhov, V.Yu.; Ibragimova, M.I.; Khabibullina, N.R; Zheglov, E.P.; Muller, R.

    2002-01-01

    Polymer films containing small metal particles have been attracting particular interest because of their unique properties. Implantation of metal ions in polymers is one of the methods to synthesize metal-polymer nano-composite materials. Ion implantation makes possible the magnetic nano-structures with controlled parameters. Previously, we showed that 3d-metal implantation into numerous polymers (polymethylmethacrylate, phosphorus containing polymethylmethacrylate) resulted in the formation of a composite film consisting of metal nanoparticles buried in an implanted layer. The particles are usually found to be distributed randomly in the surface layer. It has been established that structural peculiarities, phase composition, and magnetic properties of synthesized metal-polymer systems depend on the type of the initial polymer matrix, ion types, as well as conditions of ion implantation. In the present study we have been prepared thin metal-polymer composite films by ion-beam implantation of Fe + and Co + ions in polyethylene terephthalate. The implantation of 40 keV ions at room temperature with doses from 2·10 1 6 to 3·10 17 cm -2 have been performed, with the ion current density not exceeding 10 μA/cm 2 . The magnetic properties have been investigated both by ferromagnetic resonance (FMR) and vibrating sample magnetometry (VSM). FMR spectra were recorded using magnetic radio spectrometer Varian E-12 with frequency of 9.5 GHz at room temperature. The dependencies of FMR spectra on orientation have been measured for all samples. Measurements were carried out for two orientations of the sample, normal direction of the films being either parallel or perpendicular to dc magnetic field. The values of the effective magnetization were calculated from orientation dependencies. Thin ferromagnetic films (TFF) have been shown to form for samples with both implanted ions. For samples implanted with Co + ions, the appearance of FMR lines occurs at doses markedly greater

  9. Electron confinement in thin metal films. Structure, morphology and interactions

    Energy Technology Data Exchange (ETDEWEB)

    Dil, J.H.

    2006-05-15

    This thesis investigates the interplay between reduced dimensionality, electronic structure, and interface effects in ultrathin metal layers (Pb, In, Al) on a variety of substrates (Si, Cu, graphite). These layers can be grown with such a perfection that electron confinement in the direction normal to the film leads to the occurrence of quantum well states in their valence bands. These quantum well states are studied in detail, and their behaviour with film thickness, on different substrates, and other parameters of growth are used here to characterise a variety of physical properties of such nanoscale systems. The sections of the thesis deal with a determination of quantum well state energies for a large data set on different systems, the interplay between film morphology and electronic structure, and the influence of substrate electronic structure on their band shape; finally, new ground is broken by demonstrating electron localization and correlation effects, and the possibility to measure the influence of electron-phonon coupling in bulk bands. (orig.)

  10. Site-selective electroless nickel plating on patterned thin films of macromolecular metal complexes.

    Science.gov (United States)

    Kimura, Mutsumi; Yamagiwa, Hiroki; Asakawa, Daisuke; Noguchi, Makoto; Kurashina, Tadashi; Fukawa, Tadashi; Shirai, Hirofusa

    2010-12-01

    We demonstrate a simple route to depositing nickel layer patterns using photocross-linked polymer thin films containing palladium catalysts, which can be used as adhesive interlayers for fabrication of nickel patterns on glass and plastic substrates. Electroless nickel patterns can be obtained in three steps: (i) the pattern formation of partially quaterized poly(vinyl pyridine) by UV irradiation, (ii) the formation of macromolecular metal complex with palladium, and (iii) the nickel metallization using electroless plating bath. Metallization is site-selective and allows for a high resolution. And the resulting nickel layered structure shows good adhesion with glass and plastic substrates. The direct patterning of metallic layers onto insulating substrates indicates a great potential for fabricating micro/nano devices.

  11. How thin barrier metal can be used to prevent Co diffusion in the modern integrated circuits?

    International Nuclear Information System (INIS)

    Dixit, Hemant; Konar, Aniruddha; Pandey, Rajan; Ethirajan, Tamilmani

    2017-01-01

    In modern integrated circuits (ICs), billions of transistors are connected to each other via thin metal layers (e.g. copper, cobalt, etc) known as interconnects. At elevated process temperatures, inter-diffusion of atomic species can occur among these metal layers, causing sub-optimal performance of interconnects, which may lead to the failure of an IC. Thus, typically a thin barrier metal layer is used to prevent the inter-diffusion of atomic species within interconnects. For ICs with sub-10 nm transistors (10 nm technology node), the design rule (thickness scaling) demands the thinnest possible barrier layer. Therefore, here we investigate the critical thickness of a titanium–nitride (TiN) barrier that can prevent the cobalt diffusion using multi-scale modeling and simulations. First, we compute the Co diffusion barrier in crystalline and amorphous TiN with the nudged elastic band method within first-principles density functional theory simulations. Later, using the calculated activation energy barriers, we quantify the Co diffusion length in the TiN metal layer with the help of kinetic Monte Carlo simulations. Such a multi-scale modelling approach yields an exact critical thickness of the metal layer sufficient to prevent the Co diffusion in IC interconnects. We obtain a diffusion length of a maximum of 2 nm for a typical process of thermal annealing at 400 °C for 30 min. Our study thus provides useful physical insights for the Co diffusion in the TiN layer and further quantifies the critical thickness (∼2 nm) to which the metal barrier layer can be thinned down for sub-10 nm ICs. (paper)

  12. How thin barrier metal can be used to prevent Co diffusion in the modern integrated circuits?

    Science.gov (United States)

    Dixit, Hemant; Konar, Aniruddha; Pandey, Rajan; Ethirajan, Tamilmani

    2017-11-01

    In modern integrated circuits (ICs), billions of transistors are connected to each other via thin metal layers (e.g. copper, cobalt, etc) known as interconnects. At elevated process temperatures, inter-diffusion of atomic species can occur among these metal layers, causing sub-optimal performance of interconnects, which may lead to the failure of an IC. Thus, typically a thin barrier metal layer is used to prevent the inter-diffusion of atomic species within interconnects. For ICs with sub-10 nm transistors (10 nm technology node), the design rule (thickness scaling) demands the thinnest possible barrier layer. Therefore, here we investigate the critical thickness of a titanium-nitride (TiN) barrier that can prevent the cobalt diffusion using multi-scale modeling and simulations. First, we compute the Co diffusion barrier in crystalline and amorphous TiN with the nudged elastic band method within first-principles density functional theory simulations. Later, using the calculated activation energy barriers, we quantify the Co diffusion length in the TiN metal layer with the help of kinetic Monte Carlo simulations. Such a multi-scale modelling approach yields an exact critical thickness of the metal layer sufficient to prevent the Co diffusion in IC interconnects. We obtain a diffusion length of a maximum of 2 nm for a typical process of thermal annealing at 400 °C for 30 min. Our study thus provides useful physical insights for the Co diffusion in the TiN layer and further quantifies the critical thickness (~2 nm) to which the metal barrier layer can be thinned down for sub-10 nm ICs.

  13. Direct observation of the lattice precursor of the metal-to-insulator transition in V2O3 thin films by surface acoustic waves

    Science.gov (United States)

    Kündel, J.; Pontiller, P.; Müller, C.; Obermeier, G.; Liu, Z.; Nateprov, A. A.; Hörner, A.; Wixforth, A.; Horn, S.; Tidecks, R.

    2013-03-01

    A surface acoustic wave (SAW) delay line is used to study the metal-to-insulator (MI) transition of V2O3 thin films deposited on a piezoelectric LiNbO3 substrate. Effects contributing to the sound velocity shift of the SAW which are caused by elastic properties of the lattice of the V2O3 films when changing the temperature are separated from those originating from the electrical conductivity. For this purpose the electric field accompanying the elastic wave of the SAW has been shielded by growing the V2O3 film on a thin metallic Cr interlayer (coated with Cr2O3), covering the piezoelectric substrate. Thus, the recently discovered lattice precursor of the MI transition can be directly observed in the experiments, and its fine structure can be investigated.

  14. Assembly of metallic nanoparticle arrays on glass via nanoimprinting and thin-film dewetting

    Directory of Open Access Journals (Sweden)

    Sun-Kyu Lee

    2017-05-01

    Full Text Available We propose a nanofabrication process to generate large-area arrays of noble metal nanoparticles on glass substrates via nanoimprinting and dewetting of metallic thin films. Glass templates were made via pattern transfer from a topographic Si mold to an inorganically cross-linked sol–gel (IGSG resist on glass using a two-layer polydimethylsiloxane (PDMS stamp followed by annealing, which turned the imprinted resist into pure silica. The transparent, topographic glass successfully templated the assembly of Au and Ag nanoparticle arrays via thin-film deposition and dewetting at elevated temperatures. The microstructural and mechanical characteristics that developed during the processes were discussed. The results are promising for low-cost mass fabrication of devices for several photonic applications.

  15. Assembly of metallic nanoparticle arrays on glass via nanoimprinting and thin-film dewetting.

    Science.gov (United States)

    Lee, Sun-Kyu; Hwang, Sori; Kim, Yoon-Kee; Oh, Yong-Jun

    2017-01-01

    We propose a nanofabrication process to generate large-area arrays of noble metal nanoparticles on glass substrates via nanoimprinting and dewetting of metallic thin films. Glass templates were made via pattern transfer from a topographic Si mold to an inorganically cross-linked sol-gel (IGSG) resist on glass using a two-layer polydimethylsiloxane (PDMS) stamp followed by annealing, which turned the imprinted resist into pure silica. The transparent, topographic glass successfully templated the assembly of Au and Ag nanoparticle arrays via thin-film deposition and dewetting at elevated temperatures. The microstructural and mechanical characteristics that developed during the processes were discussed. The results are promising for low-cost mass fabrication of devices for several photonic applications.

  16. Quantum-classical transition in the electron dynamics of thin metal films

    Energy Technology Data Exchange (ETDEWEB)

    Jasiak, R; Manfredi, G; Hervieux, P-A [Institut de Physique et Chimie des Materiaux, CNRS and Universite de Strasbourg, BP 43, F-67034 Strasbourg (France); Haefele, M [INRIA Nancy Grand-Est and Institut de Recherche en Mathematiques Avancees, 7 rue Rene Descartes, F-67084 Strasbourg (France)], E-mail: Giovanni.Manfredi@ipcms.u-strasbg.fr

    2009-06-15

    The quantum electrons dynamics in a thin metal film is studied numerically using the self-consistent Wigner-Poisson equations. The initial equilibrium is computed from the Kohn-Sham equations at finite temperature, and then mapped into the phase-space Wigner function. The time-dependent results are compared systematically with those obtained previously with a classical approach (Vlasov-Poisson equations). It is found that, for large excitations, the quantum and classical dynamics display the same low-frequency oscillations due to ballistic electrons bouncing back and forth on the film surfaces. However, below a certain excitation energy (roughly corresponding to one quantum of plasmon energy {Dirac_h}{omega}{sub p}), the quantum and classical results diverge, and the ballistic oscillations are no longer observed. These results provide an example of a quantum-classical transition that may be observed with current pump-probe experiments on thin metal films.

  17. Quantum-classical transition in the electron dynamics of thin metal films

    International Nuclear Information System (INIS)

    Jasiak, R; Manfredi, G; Hervieux, P-A; Haefele, M

    2009-01-01

    The quantum electrons dynamics in a thin metal film is studied numerically using the self-consistent Wigner-Poisson equations. The initial equilibrium is computed from the Kohn-Sham equations at finite temperature, and then mapped into the phase-space Wigner function. The time-dependent results are compared systematically with those obtained previously with a classical approach (Vlasov-Poisson equations). It is found that, for large excitations, the quantum and classical dynamics display the same low-frequency oscillations due to ballistic electrons bouncing back and forth on the film surfaces. However, below a certain excitation energy (roughly corresponding to one quantum of plasmon energy ℎω p ), the quantum and classical results diverge, and the ballistic oscillations are no longer observed. These results provide an example of a quantum-classical transition that may be observed with current pump-probe experiments on thin metal films.

  18. Hard X-ray photoemission spectroscopy of transition-metal oxide thin films and interfaces

    International Nuclear Information System (INIS)

    Wadati, H.; Fujimori, A.

    2013-01-01

    Highlights: •Photoemission spectroscopy is a powerful technique to study the electronic structures of transition-metal oxides. •Hard X-ray photoemission spectroscopy (HXPES) is a new type of photoemission spectroscopy which can probe bulk states. •HXPES is very suitable for studying oxide thin films such as the composition dependence and the film thickness dependence. -- Abstract: Photoemission spectroscopy is a powerful experimental technique to study the electronic structures of solids, especially of transition-metal oxides. Recently, hard X-ray photoemission spectroscopy (HXPES) has emerged as a more relevant experimental technique to obtain clear information about bulk states. Here, we describe how HXPES can be conveniently applied to study the interesting subjects on oxide thin films such as the composition dependence and the film thickness dependence of the electronic structures and the interfacial electronic structure of multilayers

  19. Structure of the Buried Metal-Molecule Interface in Organic Thin Film Devices

    DEFF Research Database (Denmark)

    Hansen, Christian Rein; Sørensen, Thomas Just; Glyvradal, Magni

    2009-01-01

    By use of specular X-ray reflectivity (XR) the structure of a metal-covered organic thin film device is measured with angstrom resolution. The model system is a Langmuir-Blodgett (LB) film, sandwiched between a silicon substrate and a top electrode consisting of 25 Å titanium and 100 Å aluminum....... By comparison of XR data for the five-layer Pb2+ arachidate LB film before and after vapor deposition of the Ti/Al top electrode, a detailed account of the structural damage to the organic film at the buried metal-molecule interface is obtained. We find that the organized structure of the two topmost LB layers...

  20. Synthesis and mechanical properties of Fe–Nb–B thin-film metallic glasses

    International Nuclear Information System (INIS)

    Yao, J.H.; Hostert, C.; Music, D.; Frisk, A.; Björck, M.; Schneider, J.M.

    2012-01-01

    Fe–Nb–B thin-film metallic glasses (TFMGs) were synthesized via a combinatorial sputtering approach to probe the property–composition correlation. The boron content was found to dominate the mechanical properties of the TFMGs. The ∼10% smaller strength of Fe–Nb–B TFMGs compared to existing bulk metallic glass with similar composition may be attributed to the absence of a network-like structure based on (Fe,M) 23 B 6 phase due to the extreme quenching conditions employed.

  1. Metal-insulator phase transition in a VO2 thin film observed with terahertz spectroscopy

    DEFF Research Database (Denmark)

    Jepsen, Peter Uhd; Fischer, Bernd M.; Thoman, Andreas

    2006-01-01

    We investigate the dielectric properties of a thin VO2 film in the terahertz frequency range in the vicinity of the semiconductor-metal phase transition. Phase-sensitive broadband spectroscopy in the frequency region below the phonon bands of VO2 gives insight into the conductive properties...... of the film during the phase transition. We compare our experimental data with models proposed for the evolution of the phase transition. The experimental data show that the phase transition occurs via the gradual growth of metallic domains in the film, and that the dielectric properties of the film...

  2. Microsputterer with integrated ion-drag focusing for additive manufacturing of thin, narrow conductive lines

    Science.gov (United States)

    Kornbluth, Y. S.; Mathews, R. H.; Parameswaran, L.; Racz, L. M.; Velásquez-García, L. F.

    2018-04-01

    We report the design, modelling, and proof-of-concept demonstration of a continuously fed, atmospheric-pressure microplasma metal sputterer that is capable of printing conductive lines narrower than the width of the target without the need for post-processing or lithographic patterning. Ion drag-induced focusing is harnessed to print narrow lines; the focusing mechanism is modelled via COMSOL Multiphysics simulations and validated with experiments. A microplasma sputter head with gold target is constructed and used to deposit imprints with minimum feature sizes as narrow as 9 µm, roughness as small as 55 nm, and electrical resistivity as low as 1.1 µΩ · m.

  3. Study of thin metal films and oxide materials for nanoelectronics applications

    OpenAIRE

    De Los Santos Valladares, Luis

    2012-01-01

    Appendix A Pages 132-134 have been removed from this online version of the thesis for publisher copyright reasons. These had contained page images from the cover of Nanotechnology, Vol. 21, Nov 2010 and its corresponding web alert Different types of thin metal films and oxide materials are studied for their potential application in nanoelectronics: gold and copper films, nickel nanoelectrodes, oxide nanograin superconductors, carboxyl ferromagnetic microspheres and graphene oxide...

  4. Spin-Hall conductivity and electric polarization in metallic thin films

    KAUST Repository

    Wang, Xuhui

    2013-02-21

    We predict theoretically that when a normal metallic thin film (without bulk spin-orbit coupling, such as Cu or Al) is sandwiched by two insulators, two prominent effects arise due to the interfacial spin-orbit coupling: a giant spin-Hall conductivity due to the surface scattering and a transverse electric polarization due to the spin-dependent phase shift in the spinor wave functions.

  5. Theoretical studies of epitaxially grown Co and Ni thin films on (111) metallic substrates

    Czech Academy of Sciences Publication Activity Database

    Zelený, Martin; Šob, Mojmír

    2008-01-01

    Roč. 77, č. 15 (2008), 155435/1-155435/6 ISSN 1098-0121 R&D Projects: GA AV ČR IAA1041302; GA ČR GD106/05/H008; GA MŠk OC 147 Institutional research plan: CEZ:AV0Z20410507 Keywords : Thin metallic films * Ab initio calculations * Electronic structure Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.322, year: 2008

  6. Spin-Hall conductivity and electric polarization in metallic thin films

    KAUST Repository

    Wang, Xuhui; Xiao, Jiang; Manchon, Aurelien; Maekawa, Sadamichi

    2013-01-01

    We predict theoretically that when a normal metallic thin film (without bulk spin-orbit coupling, such as Cu or Al) is sandwiched by two insulators, two prominent effects arise due to the interfacial spin-orbit coupling: a giant spin-Hall conductivity due to the surface scattering and a transverse electric polarization due to the spin-dependent phase shift in the spinor wave functions.

  7. Electrodeposition of Metal Matrix Composites and Materials Characterization for Thin-Film Solar Cells

    Science.gov (United States)

    2017-12-04

    Air Mass CNT Carbon Nanotubes DIV Dark Current -Voltage DMA Dynamic Mechanical Analysis EL Electroluminescence FEM Finite Element Method IMM...AFRL-RV-PS- AFRL-RV-PS- TR-2017-0174 TR-2017-0174 ELECTRODEPOSITION OF METAL MATRIX COMPOSITES AND MATERIALS CHARACTERIZATION FOR THIN-FILM SOLAR...research which is exempt from public affairs security and policy review in accordance with AFI 61-201, paragraph 2.3.5.1. This report is available to

  8. Improvement of formability for fabricating thin continuously corrugated structures in sheet metal forming process

    International Nuclear Information System (INIS)

    Choi, Sung Woo; Park, Sang Hu; Park, Seong Hun; Ha, Man Yeong; Jeong, Ho Seung; Cho, Jong Rae

    2012-01-01

    A stamping process is widely used for fabricating various sheet metal parts for vehicles, airplanes, and electronic devices by the merit of low processing cost and high productivity. Recently, the use of thin sheets with a corrugated structure for sheet metal parts has rapidly increased for use in energy management devices, such as heat exchangers, separators in fuel cells, and many others. However, it is not easy to make thin corrugated structures directly using a single step stamping process due to their geometrical complexity and very thin thickness. To solve this problem, a multi step stamping (MSS) process that includes a heat treatment process to improve formability is proposed in this work: the sequential process is the initial stamping, heat treatment, and final shaping. By the proposed method, we achieved successful results in fabricating thin corrugated structures with an average thickness of 75μm and increased formability of about 31% compared to the single step stamping process. Such structures can be used in a plate-type heat exchanger requiring low weight and a compact shape

  9. Thin blue lines: product placement and the drama of pregnancy testing in British cinema and television.

    Science.gov (United States)

    Olszynko-Gryn, Jesse

    2017-09-01

    This article uses the case of pregnancy testing in Britain to investigate the process whereby new and often controversial reproductive technologies are made visible and normalized in mainstream entertainment media. It shows how in the 1980s and 1990s the then nascent product placement industry was instrumental in embedding pregnancy testing in British cinema and television's dramatic productions. In this period, the pregnancy-test close-up became a conventional trope and the thin blue lines associated with Unilever's Clearblue rose to prominence in mainstream consumer culture. This article investigates the aestheticization of pregnancy testing and shows how increasingly visible public concerns about 'schoolgirl mums', abortion and the biological clock, dramatized on the big and small screen, propelled the commercial rise of Clearblue. It argues that the Clearblue close-up ambiguously concealed as much as it revealed; abstraction, ambiguity and flexibility were its keys to success.

  10. Identification of Metal Absorption Lines on Quasar Spectra of SDSS ...

    Indian Academy of Sciences (India)

    . Baise 533000, China. 2Guangdong University of Technology, Guangzhou 510006, China. 3Centre for Astrophysics, Guangzhou University, Guangzhou 510006, China. ∗ e-mail: cysu@gdut.edu.cn. Abstract. Absorption lines are an important ...

  11. A study of using femtosecond LIBS in analyzing metallic thin film-semiconductor interface

    Science.gov (United States)

    Galmed, A. H.; Kassem, A. K.; von Bergmann, H.; Harith, M. A.

    2011-01-01

    Metals and metal alloys are usually employed as interconnections to guide electrical signals between components into the very large scale integrated (VLSI) devices. These devices demand higher complexity, better performance and lower cost. Thin film is a common geometry for these metallic applications, requiring a substrate for rigidity. Accurate depth profile analysis of coatings is becoming increasingly important with expanding industrial use in technological fields. A number of articles devoted to LIBS applications for depth-resolved analysis have been published in recent years. In the present work, we are studying the ability of femtosecond LIBS to make depth profiling for a Ti thin film of thickness 213 nm deposited onto a silicon (100) substrate before and after thermal annealing. The measurements revealed that an average ablation rates of 15 nm per pulse have been achieved. The thin film was examined using X-Ray Diffraction (XRD) and Atomic Force Microscope (AFM), while the formation of the interface was examined using Rutherford Back Scattering (RBS) before and after annealing. To verify the depth profiling results, a theoretical simulation model is presented that gave a very good agreement with the experimental results.

  12. An optimized In–CuGa metallic precursors for chalcopyrite thin films

    Energy Technology Data Exchange (ETDEWEB)

    Han, Jun-feng, E-mail: junfeng.han@cnrs-imn.fr [Institut des Matériaux Jean Rouxel (IMN), Université de Nantes, UMR CNRS 6502, 2 rue de la Houssinière, BP 32229, 44322 Nantes Cedex 3 (France); Department of Physics, Peking University, Beijing 100871 (China); Liao, Cheng [Department of Physics, Peking University, Beijing 100871 (China); Chengdu Green Energy and Green Manufacturing Technology R and D Center, Chengdu, Sichuan Province 601207 (China); Jiang, Tao; Xie, Hua-mu; Zhao, Kui [Department of Physics, Peking University, Beijing 100871 (China); Besland, M.-P. [Institut des Matériaux Jean Rouxel (IMN), Université de Nantes, UMR CNRS 6502, 2 rue de la Houssinière, BP 32229, 44322 Nantes Cedex 3 (France)

    2013-10-31

    We report a study of CuGa–In metallic precursors for chalcopyrite thin film. CuGa and In thin films were prepared by DC sputtering at room temperature. Due to low melting point of indium, the sputtering power on indium target was optimized. Then, CuGa and In multilayers were annealed at low temperature. At 120 °C, the annealing treatment could enhance diffusion and alloying of CuGa and In layers; however, at 160 °C, it caused a cohesion and crystalline of indium from the alloy which consequently formed irregular nodules on the film surface. The precursors were selenized to form copper indium gallium selenide (CIGS) thin films. The morphological and structural properties were investigated by scanning electron microscopy, X-ray diffraction and Raman spectra. The relationships between metallic precursors and CIGS films were discussed in the paper. A smooth precursor layer was the key factor to obtain a homogeneous and compact CIGS film. - Highlights: • An optimized sputtered indium film • An optimized alloying process of metallic precursor • An observation of nodules forming on the indium film and precursor surface • An observation of cauliflower structure in copper indium gallium selenide film • The relationship between precursor and CIGS film surface morphology.

  13. Selective Metallization of Well Aligned PS-b-P2VP Block Copolymers in Thin Films and in Confined Geometries

    Science.gov (United States)

    Sievert, James D.; Watkins, James J.; Russell, Thomas P.

    2006-03-01

    Well aligned, microphase-separated structures of styrene-2-vinylpyridine block copolymers are being used as templates for macromolecule-metal nanocomposites. These composites are either prepared as thin films or confined in nanoporous aluminum oxide membranes. Under optimal conditions, templates are prepared as thin films or confined nanorods and metallized without disturbing the ordered structure. We have developed a procedure that deposits metal within the polymer using supercritical carbon dioxide-soluble metal precursors. The use of supercritical carbon dioxide allows for selective metallization of the polymer at or below the glass transition, without disrupting the morphology. In addition, similar procedures have been investigated using metal salts and acids. Using these techniques, metals and metal-sulfides including silver, gold, platinum and zinc sulfide have been selectively deposited.

  14. Fracture resistance of dental nickel–titanium rotary instruments with novel surface treatment: Thin film metallic glass coating

    Directory of Open Access Journals (Sweden)

    Chih-Wen Chi

    2017-05-01

    Conclusion: The novel surface treatment of Ti-Zr-B thin film metallic glass on dental NiTi rotary files can effectively improve the fatigue fracture resistance by offering a smooth coated surface with amorphous microstructure.

  15. Transparent and conductive electrodes by large-scale nano-structuring of noble metal thin-films

    DEFF Research Database (Denmark)

    Linnet, Jes; Runge Walther, Anders; Wolff, Christian

    2018-01-01

    grid, and nano-wire thin-films. The indium and carbon films do not match the chemical stability nor the electrical performance of the noble metals, and many metal films are not uniform in material distribution leading to significant surface roughness and randomized transmission haze. We demonstrate...... solution-processed masks for physical vapor-deposited metal electrodes consisting of hexagonally ordered aperture arrays with scalable aperture-size and spacing in an otherwise homogeneous noble metal thin-film that may exhibit better electrical performance than carbon nanotube-based thin-films...... for equivalent optical transparency. The fabricated electrodes are characterized optically and electrically by measuring transmittance and sheet resistance. The presented methods yield large-scale reproducible results. Experimentally realized thin-films with very low sheet resistance, Rsh = 2.01 ± 0.14 Ω...

  16. Spray coating of self-aligning passivation layer for metal grid lines

    NARCIS (Netherlands)

    Vuorinen, T.; Janka, M.; Rubingh, J.E.J.M.; Tuukkanen, S.; Groen, P.; Lupo, D.

    2014-01-01

    In applications such as organic light emitting diodes (OLEDs) or photovoltaic cells a homogenous voltage distribution in the large anode layer needs to be ensured by including a metal grid with a transparent conductor layer. To ensure sufficient conductivity, relatively thick metal lines are used,

  17. Surface structure determinations of crystalline ionic thin films grown on transition metal single crystal surfaces by low energy electron diffraction

    Energy Technology Data Exchange (ETDEWEB)

    Roberts, Joel Glenn [Univ. of California, Berkeley, CA (United States)

    2000-05-01

    The surface structures of NaCl(100), LiF(100) and alpha-MgCl2(0001) adsorbed on various metal single crystals have been determined by low energy electron diffraction (LEED). Thin films of these salts were grown on metal substrates by exposing the heated metal surface to a molecular flux of salt emitted from a Knudsen cell. This method of investigating thin films of insulators (ionic salts) on a conducting substrate (metal) circumvents surface charging problems that plagued bulk studies, thereby allowing the use of electron-based techniques to characterize the surface.

  18. Extraordinary light transmission through opaque thin metal film with subwavelength holes blocked by metal disks.

    Science.gov (United States)

    Li, Wen-Di; Hu, Jonathan; Chou, Stephen Y

    2011-10-10

    We observed that when subwavelength-sized holes in an optically opaque metal film are completely covered by opaque metal disks larger than the holes, the light transmission through the holes is not reduced, but rather enhanced. Particularly we report (i) the observation of light transmission through the holes blocked by the metal disks up to 70% larger than the unblocked holes; (ii) the observation of tuning the light transmission by varying the coupling strength between the blocking disks and the hole array, or by changing the size of the disks and holes; (iii) the observation and simulation that the metal disk blocker can improve light coupling from free space to a subwavelength hole; and (iv) the simulation that shows the light transmission through subwavelength holes can be enhanced, even though the gap between the disk and the metal film is partially connected with a metal. We believe these finding should have broad and significant impacts and applications to optical systems in many fields.

  19. The rate of thermal expansion of a thin metallic slab of arbitrary shape.

    Science.gov (United States)

    Lee, Y C

    2009-08-12

    In a previous paper the rate of thermal expansion of a long, slender insulating bar has been worked out. Our present aim is to extend that work to the thermal expansion rate of not only a long metallic bar, but to further generalize it to a thin metallic slab of arbitrary shape. Assuming that the thickness of the slab is small compared to the linear dimension of its area we again take advantage of the two distinct, disparate timescales to turn the familiar problem of thermal expansion into a time-dependent problem of the rate of the expansion. Based on the previously established finite physical momentum of an acoustic phonon when translational invariance is broken, we show that the combined pressure of the phonons and the free electrons due to their outward momenta would suffer a Doppler reduction as the specimen expands upon heating. This Doppler reduction gives rise to damping of the expanding motion, thus yielding as a first result the time of thermal expansion of a long slender metal bar. The generalization to the important case of a thin metallic slab of any shape is then worked out in detail before a concluding section containing a long physical discussion and summary.

  20. Persistent semi-metal-like nature of epitaxial perovskite CaIrO3 thin films

    International Nuclear Information System (INIS)

    Biswas, Abhijit; Jeong, Yoon Hee

    2015-01-01

    Strong spin-orbit coupled 5d transition metal based ABO 3 oxides, especially iridates, allow tuning parameters in the phase diagram and may demonstrate important functionalities, for example, by means of strain effects and symmetry-breaking, because of the interplay between the Coulomb interactions and strong spin-orbit coupling. Here, we have epitaxially stabilized high quality thin films of perovskite (Pv) CaIrO 3 . Film on the best lattice-matched substrate shows semi-metal-like characteristics. Intriguingly, imposing tensile or compressive strain on the film by altering the underlying lattice-mismatched substrates still maintains semi-metallicity with minute modification of the effective correlation as tensile (compressive) strain results in tiny increases (decreases) of the electronic bandwidth. In addition, magnetoresistance remains positive with a quadratic field dependence. This persistent semi-metal-like nature of Pv-CaIrO 3 thin films with minute changes in the effective correlation by strain may provide new wisdom into strong spin-orbit coupled 5d based oxide physics

  1. An On-Line Method for Thermal Diffusivity Detection of Thin Films Using Infrared Video

    Directory of Open Access Journals (Sweden)

    Dong Huilong

    2016-03-01

    Full Text Available A novel method for thermal diffusivity evolution of thin-film materials with pulsed Gaussian beam and infrared video is reported. Compared with common pulse methods performed in specialized labs, the proposed method implements a rapid on-line measurement without producing the off-centre detection error. Through mathematical deduction of the original heat conduction model, it is discovered that the area s, which is encircled by the maximum temperature curve rTMAX(θ, increases linearly over elapsed time. The thermal diffusivity is acquired from the growth rate of the area s. In this study, the off-centre detection error is avoided by performing the distance regularized level set evolution formulation. The area s was extracted from the binary images of temperature variation rate, without inducing errors from determination of the heat source centre. Thermal diffusivities of three materials, 304 stainless steel, titanium, and zirconium have been measured with the established on-line detection system, and the measurement errors are: −2.26%, −1.07%, and 1.61% respectively.

  2. Measurement of contact-line dissipation in a nanometer-thin soap film.

    Science.gov (United States)

    Guo, Shuo; Lee, Chun Huen; Sheng, Ping; Tong, Penger

    2015-01-01

    We report a direct measurement of the friction coefficient ξ(c) of two fluctuating contact lines formed on a fiber surface when a long glass fiber intersects the two water-air interfaces of a thin soap film. The glass fiber of diameter d in the range of 0.4-4 μm and length 100-300 μm is glued onto the front end of a rectangular cantilever used for atomic force microscopy. As a sensitive mechanical resonator, the hanging fiber probe can accurately measure a minute change of its viscous damping caused by the soap film. By measuring the broadening of the resonant peak of the hanging fiber probe with varying viscosity η of the soap film and different surface treatments of the glass fiber, we confirm that the contact line dissipation obeys a universal scaling law, ξ(c)=απdη, where the coefficient α=1.1±0.3 is insensitive to the change of liquid-solid contact angle. The experimental result is in good agreement with the numerical result based on the phase field model under the generalized Navier boundary conditions.

  3. A system for on-line monitoring of light element concentration distributions in thin samples

    Energy Technology Data Exchange (ETDEWEB)

    Brands, P.J.M. E-mail: p.j.m.brands@tue.nl; Mutsaers, P.H.A.; Voigt, M.J.A. de

    1999-09-02

    At the Cyclotron Laboratory, a scanning proton microprobe is used to determine concentration distributions in biomedical samples. The data acquired in these measurements used to be analysed in a time consuming off-line analysis. To avoid the loss of valuable measurement and analysis time, DYANA was developed. DYANA is an on-line method for the analysis of data from biomedical measurements. By using a database of background shapes, light elements such as Na and Mg, can be fitted even more precisely than in conventional fitting procedures. The entire analysis takes only several seconds and is performed while the acquisition system is gathering a new subset of data. Data acquisition must be guaranteed and may not be interfered by other parallel processes. Therefore, the analysis, the data acquisition and the experiment control is performed on a PCI-based Pentium personal computer (PC), running a real-time operating system. A second PC is added to run a graphical user interface for interaction with the experimenter and the monitoring of the analysed results. The system is here illustrated using atherosclerotic tissue but is applicable to all kinds of thin samples.

  4. Epitaxially influenced boundary layer model for size effect in thin metallic films

    International Nuclear Information System (INIS)

    Bazant, Zdenek P.; Guo Zaoyang; Espinosa, Horacio D.; Zhu Yong; Peng Bei

    2005-01-01

    It is shown that the size effect recently observed by Espinosa et al., [J. Mech. Phys. Solids51, 47 (2003)] in pure tension tests on free thin metallic films can be explained by the existence of a boundary layer of fixed thickness, located at the surface of the film that was attached onto the substrate during deposition. The boundary layer is influenced by the epitaxial effects of crystal growth on the dislocation density and texture (manifested by prevalent crystal plane orientations). This influence is assumed to cause significantly elevated yield strength. Furthermore, the observed gradual postpeak softening, along with its size independence, which is observed in short film strips subjected to pure tension, is explained by slip localization, originating at notch-like defects, and by damage, which can propagate in a stable manner when the film strip under pure tension is sufficiently thin and short. For general applications, the present epitaxially influenced boundary layer model may be combined with the classical strain-gradient plasticity proposed by Gao et al., [J. Mech. Phys. Solids 47, 1239 (1999)], and it is shown that this combination is necessary to fit the test data on both pure tension and bending of thin films by one and the same theory. To deal with films having different crystal grain sizes, the Hall-Petch relation for the yield strength dependence on the grain size needs to be incorporated into the combined theory. For very thin films, in which a flattened grain fills the whole film thickness, the Hall-Petch relation needs a cutoff, and the asymptotic increase of yield strength with diminishing film thickness is then described by the extension of Nix's model of misfit dislocations by Zhang and Zhou [J. Adv. Mater. 38, 51 (2002)]. The final result is a proposal of a general theory for strength, size effect, hardening, and softening of thin metallic films

  5. Epitaxially influenced boundary layer model for size effect in thin metallic films

    Science.gov (United States)

    Bažant, Zdeněk P.; Guo, Zaoyang; Espinosa, Horacio D.; Zhu, Yong; Peng, Bei

    2005-04-01

    It is shown that the size effect recently observed by Espinosa et al., [J. Mech. Phys. Solids51, 47 (2003)] in pure tension tests on free thin metallic films can be explained by the existence of a boundary layer of fixed thickness, located at the surface of the film that was attached onto the substrate during deposition. The boundary layer is influenced by the epitaxial effects of crystal growth on the dislocation density and texture (manifested by prevalent crystal plane orientations). This influence is assumed to cause significantly elevated yield strength. Furthermore, the observed gradual postpeak softening, along with its size independence, which is observed in short film strips subjected to pure tension, is explained by slip localization, originating at notch-like defects, and by damage, which can propagate in a stable manner when the film strip under pure tension is sufficiently thin and short. For general applications, the present epitaxially influenced boundary layer model may be combined with the classical strain-gradient plasticity proposed by Gao et al., [J. Mech. Phys. Solids 47, 1239 (1999)], and it is shown that this combination is necessary to fit the test data on both pure tension and bending of thin films by one and the same theory. To deal with films having different crystal grain sizes, the Hall-Petch relation for the yield strength dependence on the grain size needs to be incorporated into the combined theory. For very thin films, in which a flattened grain fills the whole film thickness, the Hall-Petch relation needs a cutoff, and the asymptotic increase of yield strength with diminishing film thickness is then described by the extension of Nix's model of misfit dislocations by Zhang and Zhou [J. Adv. Mater. 38, 51 (2002)]. The final result is a proposal of a general theory for strength, size effect, hardening, and softening of thin metallic films.

  6. Magnetoelectric coupling effect in transition metal modified polycrystalline BiFeO{sub 3} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Sreenivas Puli, Venkata, E-mail: pvsri123@gmail.com [Department of Physics and Engineering Physics, Tulane University, New Orleans, LA 70118 (United States); Department of Physics and Institute of Functional Nanomaterials, University of Puerto Rico, San Juan, PR 00936 (United States); Kumar Pradhan, Dhiren [Department of Physics and Institute of Functional Nanomaterials, University of Puerto Rico, San Juan, PR 00936 (United States); Gollapudi, Sreenivasulu [Department of Physics, Oakland University, Rochester, MI 48309-4401 (United States); Coondoo, Indrani [Department of Materials and Ceramic and CICECO, University of Aveiro, 3810-193 Aveiro (Portugal); Panwar, Neeraj [Department of Physics, Central University of Rajasthan, Bandar Sindri, Kishangarh 305801, Rajasthan (India); Adireddy, Shiva; Chrisey, Douglas B. [Department of Physics and Engineering Physics, Tulane University, New Orleans, LA 70118 (United States); Katiyar, Ram S. [Department of Physics and Institute of Functional Nanomaterials, University of Puerto Rico, San Juan, PR 00936 (United States)

    2014-11-15

    Rare-earth (Sm) and transition metal (Co) modified polycrystalline BiFeO{sub 3} (BFO) thin films have been deposited on Pt/TiO{sub 2}/SiO{sub 2}/Si substrate successfully through pulsed laser deposition (PLD) technique. Piezoelectric, leakage current and temperature dependent dielectric and magnetic behaviour were investigated for the films. Typical “butterfly-shaped” loop were observed in BSFCO films with an effective piezoelectric constant (d{sub 33}) ∼94 pm/V at 0.6 MV/cm. High dielectric constant ∼900 and low dielectric loss ∼0.25 were observed at room temperature. M–H loops have shown relatively high saturation magnetization ∼35 emu/cm{sup 3} at a maximum field of H ∼20 kOe. Enhanced magnetoelectric coupling response is observed under applied magnetic field. The multiferroic, piezoelectric, leakage current behaviours were explored. Such studies should be helpful in designing multiferroic materials based on BSFCO films. - Highlights: • Transition metal modified polycrystalline BiFeO{sub 3} thin films prepared using PLD. • High ME-coupling response was observed in co-substituted BiFeO{sub 3} thin films. • High magnetization ∼35 emu/cm{sup 3} at a maximum field of H ∼20 kOe. • Low leakage current might be due to co-substitution in BiFeO{sub 3} thin films. • A notable piezoelectric constant d{sub 33} ∼94 pm/V was found in BiFeO{sub 3} thin films.

  7. Magnetoelectric coupling effect in transition metal modified polycrystalline BiFeO3 thin films

    International Nuclear Information System (INIS)

    Sreenivas Puli, Venkata; Kumar Pradhan, Dhiren; Gollapudi, Sreenivasulu; Coondoo, Indrani; Panwar, Neeraj; Adireddy, Shiva; Chrisey, Douglas B.; Katiyar, Ram S.

    2014-01-01

    Rare-earth (Sm) and transition metal (Co) modified polycrystalline BiFeO 3 (BFO) thin films have been deposited on Pt/TiO 2 /SiO 2 /Si substrate successfully through pulsed laser deposition (PLD) technique. Piezoelectric, leakage current and temperature dependent dielectric and magnetic behaviour were investigated for the films. Typical “butterfly-shaped” loop were observed in BSFCO films with an effective piezoelectric constant (d 33 ) ∼94 pm/V at 0.6 MV/cm. High dielectric constant ∼900 and low dielectric loss ∼0.25 were observed at room temperature. M–H loops have shown relatively high saturation magnetization ∼35 emu/cm 3 at a maximum field of H ∼20 kOe. Enhanced magnetoelectric coupling response is observed under applied magnetic field. The multiferroic, piezoelectric, leakage current behaviours were explored. Such studies should be helpful in designing multiferroic materials based on BSFCO films. - Highlights: • Transition metal modified polycrystalline BiFeO 3 thin films prepared using PLD. • High ME-coupling response was observed in co-substituted BiFeO 3 thin films. • High magnetization ∼35 emu/cm 3 at a maximum field of H ∼20 kOe. • Low leakage current might be due to co-substitution in BiFeO 3 thin films. • A notable piezoelectric constant d 33 ∼94 pm/V was found in BiFeO 3 thin films

  8. Optimal Shakedown of the Thin-Wall Metal Structures Under Strength and Stiffness Constraints

    Directory of Open Access Journals (Sweden)

    Alawdin Piotr

    2017-06-01

    Full Text Available Classical optimization problems of metal structures confined mainly with 1st class cross-sections. But in practice it is common to use the cross-sections of higher classes. In this paper, a new mathematical model for described shakedown optimization problem for metal structures, which elements are designed from 1st to 4th class cross-sections, under variable quasi-static loads is presented. The features of limited plastic redistribution of forces in the structure with thin-walled elements there are taken into account. Authors assume the elastic-plastic flexural buckling in one plane without lateral torsional buckling behavior of members. Design formulae for Methods 1 and 2 for members are analyzed. Structures stiffness constrains are also incorporated in order to satisfy the limit serviceability state requirements. With the help of mathematical programming theory and extreme principles the structure optimization algorithm is developed and justified with the numerical experiment for the metal plane frames.

  9. Coupled Optical Tamm States in a Planar Dielectric Mirror Structure Containing a Thin Metal Film

    International Nuclear Information System (INIS)

    Zhou Hai-Chun; Yang Guang; Lu Pei-Xiang; Wang Kai; Long Hua

    2012-01-01

    The coupling between two optical Tamm states (OTSs) with the same eigenenergy is numerically investigated in a planar dielectric mirror structure containing a thin metal film. The reflectivity map in this structure at normal incidence is obtained by applying the transfer matrix method. Two splitting branches appear in the photonic bandgap region when both adjacent dielectric layers of metal film are properly set. The splitting energy of two branches strongly depends on the thickness of the metal film. According to the electric field distribution in this structure, it is found that the high-energy branch corresponds to the antisymmetric coupling between two OTSs, while the low-energy branch is associated with the symmetric coupling between two OTSs. Moreover, the optical difference frequency of two branches is located in a broad terahertz region. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  10. Black metal thin films by deposition on dielectric antireflective moth-eye nanostructures

    DEFF Research Database (Denmark)

    Christiansen, Alexander Bruun; Caringal, Gideon Peter; Clausen, Jeppe Sandvik

    2015-01-01

    Although metals are commonly shiny and highly reflective, we here show that thin metal films appear black when deposited on a dielectric with antireflective moth-eye nanostructures. The nanostructures were tapered and close-packed, with heights in the range 300-600 nm, and a lateral, spatial...... frequency in the range 5-7 mu m(-1). A reflectance in the visible spectrum as low as 6%, and an absorbance of 90% was observed for an Al film of 100 nm thickness. Corresponding experiments on a planar film yielded 80% reflectance and 20% absorbance. The observed absorbance enhancement is attributed...... to a gradient effect causing the metal film to be antireflective, analogous to the mechanism in dielectrics and semiconductors. We find that the investigated nanostructures have too large spatial frequency to facilitate efficient coupling to the otherwise non-radiating surface plasmons. Applications...

  11. Analytical modelling of a thin liquid metal layer submitted to an ac magnetic field

    Energy Technology Data Exchange (ETDEWEB)

    Hinaje, M [Groupe de Recherche en Electrotechnique et Electronique de Nancy, 2 avenue de la Foret de Haye, 54516 Vandoeuvre-les-Nancy (France); Vinsard, G [Laboratoire d' Energetique et de Mecanique Theorique et Appliquee, 2 avenue de la Foret de Haye, 54516 Vandoeuvre-les-Nancy (France); Dufour, S [Laboratoire d' Energetique et de Mecanique Theorique et Appliquee, 2 avenue de la Foret de Haye, 54516 Vandoeuvre-les-Nancy (France)

    2006-07-07

    A cylindrical thin liquid metal layer is submitted to a uniform ac magnetic field. When the intensity of the electromagnetic field exceeds a critical value, an opening in the liquid is shaped from outside to inside. At a given intensity of the electromagnetic field, this opening is in a frozen state, that is, the liquid metal layer reaches a new equilibrium shape. In this paper, we show that this equilibrium corresponds to a minimum of the total energy of the system. This total energy is equal to the sum of the magnetic energy and the mechanical energy. The magnetic energy is computed by assuming that the induced eddy current flowing through the liquid metal layer is concentrated in the cross-section S{sub c} equal to the product of the skin depth and the thickness of the layer. This assumption leads us to study an equivalent electrical circuit. The mechanical energy is composed of the potential energy and the surface energy.

  12. Analytical modelling of a thin liquid metal layer submitted to an ac magnetic field

    International Nuclear Information System (INIS)

    Hinaje, M; Vinsard, G; Dufour, S

    2006-01-01

    A cylindrical thin liquid metal layer is submitted to a uniform ac magnetic field. When the intensity of the electromagnetic field exceeds a critical value, an opening in the liquid is shaped from outside to inside. At a given intensity of the electromagnetic field, this opening is in a frozen state, that is, the liquid metal layer reaches a new equilibrium shape. In this paper, we show that this equilibrium corresponds to a minimum of the total energy of the system. This total energy is equal to the sum of the magnetic energy and the mechanical energy. The magnetic energy is computed by assuming that the induced eddy current flowing through the liquid metal layer is concentrated in the cross-section S c equal to the product of the skin depth and the thickness of the layer. This assumption leads us to study an equivalent electrical circuit. The mechanical energy is composed of the potential energy and the surface energy

  13. Method for nanomodulation of metallic thin films following the replica-antireplica process based on porous alumina membranes

    Energy Technology Data Exchange (ETDEWEB)

    Palma, J.L. [Departamento de Ciencias Básicas, Facultad de Ingeniería, Universidad Central de Chile, Santa Isabel 1186, 8330601 Santiago (Chile); Center for the Development of Nanoscience and Nanotechnology (CEDENNA), 9170124 Santiago (Chile); Denardin, J.C.; Escrig, J. [Departamento de Física, Universidad de Santiago de Chile (USACH), Avda. Ecuador 3493, 9170124 Santiago (Chile); Center for the Development of Nanoscience and Nanotechnology (CEDENNA), 9170124 Santiago (Chile)

    2017-03-15

    In this paper we have introduced a method for modulation of metallic thin films by sputtering of metals on anodized aluminum templates. Using a high deposition rate during deposition of the non-magnetic metal on the Al pattern, we have separated the two metallic surfaces and, thus, imprinted a pattern of nanohills on a non-magnetic metallic film, such as Au, Ag or Cu. The morphology of the nanostructured metallic films was determined by scanning electron microscopy. Thus, we have confirmed that the ordering degree of the Al template remained after the replication process. Additionally, and as an example of use of these films, we have prepared Supermalloy thin films deposited by sputtering onto these nanostructured non-magnetic metals. The room temperature magnetic behavior of these thin films is also studied. Interestingly, we have found that when the external magnetic field is applied out of plane of the substrate, the coercivity increases linearly as we increase the radius of the nanohills. These soft magnetic films can open new opportunities for magnetic field sensor applications. - Highlights: • A very soft magnetic film is investigated on ordered nanohills. • It is possible to imprint a metallic pattern directly from the etched aluminum foil. • These nanopatterned substrates add an additional degree of freedom. • A method for modulation of metallic thin films.

  14. [Comparative study of microleakage by using different finished lines in selective laser melting metal crowns].

    Science.gov (United States)

    Peng, Yan; Zhong, Qun; Wu, Xue-Ying; Weng, Jia-Wei

    2016-12-01

    To evaluate microleakage of SLM Co -Cr alloy metal crown with two types finished line (chamfer and shoulder), compared with conventional fabrication of Co -Cr alloy metal crowns. Thirty healthy non-carious human molars were selected and randomly assigned to 3 groups, 10 in each. Teeth in group A and C received a chamfer finish line preparation, whereas teeth in group C received a shoulder finish line. Conventional Co -Cr alloy metal crowns were fabricated for group A when SLM metal crowns were made for group B and group C. Glass ionomer was applied for bonding. After 5000 thermocycles ranging from 5degrees centigrade to 55degrees centigrade,all the specimens were evaluated by dye penetration and then microleakage was examined under light microscope. The data were analyzed statistically with SPSS 20.0 software package. Microleakage in group A was significantly higher than the other two groups, group B and group C showed no significant difference in microleakage while microleakage in group B was higher than that in group C. Microleakage of SLM metal crowns was significantly less than that of conventional Co-Cr alloy metal crowns; chamfer finish line designs was recommended for SLM metal crowns in consideration of reducing microleakage and protecting tooth.

  15. Indirect Fabrication of Lattice Metals with Thin Sections Using Centrifugal Casting.

    Science.gov (United States)

    Mun, Jiwon; Ju, Jaehyung; Thurman, James

    2016-05-14

    One of the typical methods to manufacture 3D lattice metals is the direct-metal additive manufacturing (AM) process such as Selective Laser Melting (SLM) and Electron Beam Melting (EBM). In spite of its potential processing capability, the direct AM method has several disadvantages such as high cost, poor surface finish of final products, limitation in material selection, high thermal stress, and anisotropic properties of parts. We propose a cost-effective method to manufacture 3D lattice metals. The objective of this study is to provide a detailed protocol on fabrication of 3D lattice metals having a complex shape and a thin wall thickness; e.g., octet truss made of Al and Cu alloys having a unit cell length of 5 mm and a cell wall thickness of 0.5 mm. An overall experimental procedure is divided into eight sections: (a) 3D printing of sacrificial patterns (b) melt-out of support materials (c) removal of residue of support materials (d) pattern assembly (e) investment (f) burn-out of sacrificial patterns (g) centrifugal casting (h) post-processing for final products. The suggested indirect AM technique provides the potential to manufacture ultra-lightweight lattice metals; e.g., lattice structures with Al alloys. It appears that the process parameters should be properly controlled depending on materials and lattice geometry, observing the final products of octet truss metals by the indirect AM technique.

  16. One dimensional metallic edges in atomically thin WSe2 induced by air exposure

    Science.gov (United States)

    Addou, Rafik; Smyth, Christopher M.; Noh, Ji-Young; Lin, Yu-Chuan; Pan, Yi; Eichfeld, Sarah M.; Fölsch, Stefan; Robinson, Joshua A.; Cho, Kyeongjae; Feenstra, Randall M.; Wallace, Robert M.

    2018-04-01

    Transition metal dichalcogenides are a unique class of layered two-dimensional (2D) crystals with extensive promising applications. Tuning the electronic properties of low-dimensional materials is vital for engineering new functionalities. Surface oxidation is of particular interest because it is a relatively simple method of functionalization. By means of scanning probe microscopy and x-ray photoelectron spectroscopy, we report the observation of metallic edges in atomically thin WSe2 monolayers grown by chemical vapor deposition on epitaxial graphene. Scanning tunneling microscopy shows structural details of WSe2 edges and scanning tunneling spectroscopy reveals the metallic nature of the oxidized edges. Photoemission demonstrates that the formation of metallic sub-stoichiometric tungsten oxide (WO2.7) is responsible for the high conductivity measured along the edges. Ab initio calculations validate the susceptibility of WSe2 nanoribbon edges to oxidation. The zigzag terminated edge exhibits metallic behavior prior the air-exposure and remains metallic after oxidation. Comprehending and exploiting this property opens a new opportunity for application in advanced electronic devices.

  17. Velocities of dislocation groups in very thin neutron-irradiated copper single crystals measured by slip line cinematography

    Energy Technology Data Exchange (ETDEWEB)

    Potthoff, H.H. (Technische Univ. Braunschweig (Germany, F.R.). Inst. fuer Metallphysik und Nukleare Festkoerperphysik)

    1983-05-16

    Slip line development on very thin flat single crystals of neutron-irradiated Cu (thickness down to only 15 to 20 ..mu..m, orientation for single glide, yield region, room temperature) is recorded by high-speed cinematography during tensile deformation. In such very thin crystals glide dislocations on the slip plane must be arranged in a rather simple way. Drops in tensile load occuring during initiation of single slip lines at the Lueders band front indicate that in the beginning of a slip line development dislocation groups traverse the whole glide plane in very short times. Evaluating the data measured for the slip line growth v/sub s/ >= 10 cm/s is found for screw dislocations and v/sub e/ >= v/sub s/ for edge dislocations. For later stages on thin crystals and for all stages on thick crystals (>= several 100 ..mu..m) slip line development is much slower and slip line show many cross slip events which then appear to control the mean velocity of the dislocations.

  18. Velocities of dislocation groups in very thin neutron-irradiated copper single crystals measured by slip line cinematography

    International Nuclear Information System (INIS)

    Potthoff, H.H.

    1983-01-01

    Slip line development on very thin flat single crystals of neutron-irradiated Cu (thickness down to only 15 to 20 μm, orientation for single glide, yield region, room temperature) is recorded by high-speed cinematography during tensile deformation. In such very thin crystals glide dislocations on the slip plane must be arranged in a rather simple way. Drops in tensile load occuring during initiation of single slip lines at the Lueders band front indicate that in the beginning of a slip line development dislocation groups traverse the whole glide plane in very short times. Evaluating the data measured for the slip line growth v/sub s/ >= 10 cm/s is found for screw dislocations and v/sub e/ >= v/sub s/ for edge dislocations. For later stages on thin crystals and for all stages on thick crystals (>= several 100 μm) slip line development is much slower and slip line show many cross slip events which then appear to control the mean velocity of the dislocations. (author)

  19. Formation mechanisms of metallic Zn nanodots by using ZnO thin films deposited on n-Si substrates

    International Nuclear Information System (INIS)

    Yuk, J. M.; Lee, J. Y.; Kim, Y.; No, Y. S.; Kim, T. W.; Choi, W. K.

    2010-01-01

    High-resolution transmission electron microscopy and energy dispersive x-ray spectroscopy results showed that metallic Zn nanodots (NDs) were fabricated through transformation of ZnO thin films by deposition of SiO x on ZnO/n-Si (100) heterostructures. The Zn NDs with various sizes and densities were formed due to the occurrence of the mass diffusion of atoms along the grain boundaries in the ZnO thin films. The fabrication mechanisms of metallic Zn NDs through transformation of ZnO thin films deposited on n-Si substrates are described on the basis of the experimental results.

  20. Development of super thin foil metal supported catalyst; Chousuhaku metal tantai shokubai no kaihatsu

    Energy Technology Data Exchange (ETDEWEB)

    Sanji, F; Takada, T [Toyota Motor Corp., Aichi (Japan)

    1997-10-01

    In order to improve warm-up performance, high heat resistance and long life durability of catalysts, the reduction of the metal support heat capacity has been focused. The effects of both reducing foil thickness and lowering cell density on low heat capacity have been investigated. As a result of engine bench and vehicle test, it was apparent that the reduction of foil thickness has greater effects. Newly developed 30 {mu} m foil thickness metal supported catalyst has quicker warm-up performance, and its structural durability up to 950degC is confirmed. 3 refs., 11 figs., 1 tab.

  1. Chemical composition and effective temperatures of metallic line white dwarfs

    International Nuclear Information System (INIS)

    Hammond, G.L.

    1974-01-01

    Model atmosphere techniques have been employed to determine the composition, effective temperatures, radii, masses and surface gravities of white dwarfs Ross 640 and van Maanen 2. The non-gray, LTE, convective, constant flux models employed collisional damping constants for the Ca II H and K lines that were measured in a laboratory device that simulated white dwarf atmospheric conditions. Ross 640 was found to have an extremely helium-rich composition and T/sub eff/ = 8500K, while the observed properties of van Maanen 2 were fitted best by a model with 91 percent helium, 9 percent hydrogen and T/sub eff/ = 6100K. The laboratory measurements of pressure shifts for the Ca II lines casts some doubt on the interpretation of recent radial velocity determinations for van Maanen 2. (U.S.)

  2. Metal-insulator transition induced in CaVO{sub 3} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Gu Man [Department of Physics, University of Virginia, 382 McCormick Rd., Charlottesville, Virginia 22904 (United States); Laverock, Jude; Chen, Bo; Smith, Kevin E. [Department of Physics, Boston University, 590 Commonwealth Avenue, Boston, Massachusetts 02215 (United States); Wolf, Stuart A. [Department of Physics, University of Virginia, 382 McCormick Rd., Charlottesville, Virginia 22904 (United States); Department of Materials Science and Engineering, University of Virginia, 395 McCormick Rd., Charlottesville, Virginia 22904 (United States); Lu Jiwei [Department of Materials Science and Engineering, University of Virginia, 395 McCormick Rd., Charlottesville, Virginia 22904 (United States)

    2013-04-07

    Stoichiometric CaVO{sub 3} (CVO) thin films of various thicknesses were grown on single crystal SrTiO{sub 3} (STO) (001) substrates using a pulsed electron-beam deposition technique. The CVO films were capped with a 2.5 nm STO layer. We observed a temperature driven metal-insulator transition (MIT) in CVO films with thicknesses below 4 nm that was not observed in either thick CVO films or STO films. The emergence of this MIT can be attributed to the reduction in effective bandwidth due to a crossover from a three-dimensional metal to a two-dimensional insulator. The insulating phase was only induced with a drive current below 0.1 {mu}A. X-ray absorption measurements indicated different electronic structures for thick and very thin films of CVO. Compared with the thick film ({approx}60 nm), thin films of CVO (2-4 nm) were more two-dimensional with the V charge state closer to V{sup 4+}.

  3. Metal-insulator transition induced in CaVO3 thin films

    International Nuclear Information System (INIS)

    Gu Man; Laverock, Jude; Chen, Bo; Smith, Kevin E.; Wolf, Stuart A.; Lu Jiwei

    2013-01-01

    Stoichiometric CaVO 3 (CVO) thin films of various thicknesses were grown on single crystal SrTiO 3 (STO) (001) substrates using a pulsed electron-beam deposition technique. The CVO films were capped with a 2.5 nm STO layer. We observed a temperature driven metal-insulator transition (MIT) in CVO films with thicknesses below 4 nm that was not observed in either thick CVO films or STO films. The emergence of this MIT can be attributed to the reduction in effective bandwidth due to a crossover from a three-dimensional metal to a two-dimensional insulator. The insulating phase was only induced with a drive current below 0.1 μA. X-ray absorption measurements indicated different electronic structures for thick and very thin films of CVO. Compared with the thick film (∼60 nm), thin films of CVO (2–4 nm) were more two-dimensional with the V charge state closer to V 4+ .

  4. High mobility single-crystalline-like GaAs thin films on inexpensive flexible metal substrates by metal-organic chemical vapor deposition

    International Nuclear Information System (INIS)

    Dutta, P.; Rathi, M.; Gao, Y.; Yao, Y.; Selvamanickam, V.; Zheng, N.; Ahrenkiel, P.; Martinez, J.

    2014-01-01

    We demonstrate heteroepitaxial growth of single-crystalline-like n and p-type doped GaAs thin films on inexpensive, flexible, and light-weight metal foils by metal-organic chemical vapor deposition. Single-crystalline-like Ge thin film on biaxially textured templates made by ion beam assisted deposition on metal foil served as the epitaxy enabling substrate for GaAs growth. The GaAs films exhibited strong (004) preferred orientation, sharp in-plane texture, low grain misorientation, strong photoluminescence, and a defect density of ∼10 7  cm −2 . Furthermore, the GaAs films exhibited hole and electron mobilities as high as 66 and 300 cm 2 /V-s, respectively. High mobility single-crystalline-like GaAs thin films on inexpensive metal substrates can pave the path for roll-to-roll manufacturing of flexible III-V solar cells for the mainstream photovoltaics market.

  5. On the carrier transport in metal-insulator-metal structures for CdTe thin film

    International Nuclear Information System (INIS)

    Choi, K.W.; Choi, C.K.

    1982-01-01

    According to the energy band model for the Al-CdTe-Ag sandwich structure, we have investigate to the mechanism of the current limited transport(CLT). As the bias voltage applied to the Alsup(+) and Agsup(+) electrode, the potential barrier difference for this structure was found 0.2eV. From what this results, we conclude that the mechanism of the current limited transport due to the potential barrier of the contact limited current. Not only this phenomena but also the annealing effect of thin film was shown that the distingushable for virgin film. (Author)

  6. Thermal Stability of Copper-Aluminum Alloy Thin Films for Barrierless Copper Metallization on Silicon Substrate

    Science.gov (United States)

    Wang, C. P.; Dai, T.; Lu, Y.; Shi, Z.; Ruan, J. J.; Guo, Y. H.; Liu, X. J.

    2017-08-01

    Copper thin films with thickness of about 500 nm doped with different aluminum concentrations have been prepared by magnetron sputtering on Si substrate and their crystal structure, microstructure, and electrical resistivity after annealing at various temperatures (200°C to 600°C) for 1 h or at 400°C for different durations (1 h to 11 h) investigated by grazing-incidence x-ray diffraction (GIXRD) analysis, scanning electron microscopy (SEM), and four-point probe (FPP) measurements. Cu-1.8Al alloy thin film exhibited good thermal stability and low electrical resistivity (˜5.0 μΩ cm) after annealing at 500°C for 1 h or 400°C for 7 h. No copper silicide was observed at the Cu-Al/Si interface by GIXRD analysis or SEM for this sample. This result indicates that doping Cu thin film with small amounts of Al can achieve high thermal stability and low electrical resistivity, suggesting that Cu-1.8Al alloy thin film could be used for barrierless Cu metallization on Si substrate.

  7. Plasmonic modulator based on thin metal-semiconductor-metal waveguide with gain core

    DEFF Research Database (Denmark)

    Babicheva, Viktoriia; Malureanu, Radu; Lavrinenko, Andrei

    2013-01-01

    We focus on plasmonic modulators with a gain core to be implemented as active nanodevices in photonic integrated circuits. In particular, we analyze metal–semiconductor–metal (MSM) waveguides with InGaAsP-based active material layers. A MSM waveguide enables high field localization and therefore...

  8. The Mean Metal-line Absorption Spectrum of Damped Ly α Systems in BOSS

    Energy Technology Data Exchange (ETDEWEB)

    Mas-Ribas, Lluís [Institute of Theoretical Astrophysics, University of Oslo, Postboks 1029, NO-0315 Oslo (Norway); Miralda-Escudé, Jordi; Pérez-Ràfols, Ignasi; Arinyo-i-Prats, Andreu [Institut de Ciències del Cosmos, Universitat de Barcelona (UB-IEEC), Barcelona E-08028, Catalonia (Spain); Noterdaeme, Pasquier; Petitjean, Patrick [Institut d’Astrophysique de Paris, UPMC and CNRS, UMR7095 98bis Boulevard Arago, F-75014—Paris (France); Schneider, Donald P. [Department of Astronomy and Astrophysics, The Pennsylvania State University, University Park, PA 16802 (United States); York, Donald G. [Department of Astronomy and Astrophysics and the Enrico Fermi Institute, University of Chicago, 5640 South Ellis Avenue, Chicago, IL 60637 (United States); Ge, Jian, E-mail: l.m.ribas@astro.uio.no [Department of Astronomy, University of Florida, Bryant Space Science Center, Gainesville, FL 32611-2055 (United States)

    2017-09-01

    We study the mean absorption spectrum of the Damped Ly α (DLA) population at z ∼ 2.6 by stacking normalized, rest-frame-shifted spectra of ∼27,000 DLA systems from the DR12 of the Baryon Oscillation Spectroscopic Survey (BOSS)/SDSS-III. We measure the equivalent widths of 50 individual metal absorption lines in five intervals of DLA hydrogen column density, five intervals of DLA redshift, and overall mean equivalent widths for an additional 13 absorption features from groups of strongly blended lines. The mean equivalent width of low-ionization lines increases with N {sub H} {sub i}, whereas for high-ionization lines the increase is much weaker. The mean metal line equivalent widths decrease by a factor ∼1.1–1.5 from z ∼ 2.1 to z ∼ 3.5, with small or no differences between low- and high-ionization species. We develop a theoretical model, inspired by the presence of multiple absorption components observed in high-resolution spectra, to infer mean metal column densities from the equivalent widths of partially saturated metal lines. We apply this model to 14 low-ionization species and to Al iii, S iii, Si iii, C iv, Si iv, N v, and O vi. We use an approximate derivation for separating the equivalent width contributions of several lines to blended absorption features, and infer mean equivalent widths and column densities from lines of the additional species N i, Zn ii, C ii*, Fe iii, and S iv. Several of these mean column densities of metal lines in DLAs are obtained for the first time; their values generally agree with measurements of individual DLAs from high-resolution, high signal-to-noise ratio spectra when they are available.

  9. Transparent and conductive electrodes by large-scale nano-structuring of noble metal thin-films

    DEFF Research Database (Denmark)

    Linnet, Jes; Runge Walther, Anders; Wolff, Christian

    2018-01-01

    grid, and nano-wire thin-films. The indium and carbon films do not match the chemical stability nor the electrical performance of the noble metals, and many metal films are not uniform in material distribution leading to significant surface roughness and randomized transmission haze. We demonstrate...

  10. Tracking metal ions with polypyrrole thin films adhesively bonded to diazonium-modified flexible ITO electrodes.

    Science.gov (United States)

    Lo, Momath; Diaw, Abdou K D; Gningue-Sall, Diariatou; Aaron, Jean-Jacques; Oturan, Mehmet A; Chehimi, Mohamed M

    2018-05-09

    Adhesively bonded polypyrrole thin films doped with benzene sulfonic acid (BSA) were electrodeposited on aminobenzenediazonium-modified flexible ITO electrodes and further employed for the detection of Pb 2+ , Cu 2+ , and Cd 2+ metal ions in aqueous medium. The aminophenyl (AP) adhesive layer was grafted to ITO by electroreduction of the in situ generated parent diazonium compound. Polypyrrole (PPy) thin films exhibited remarkable adhesion to aminophenyl (ITO-AP). The strongly adherent polypyrrole films exhibited excellent electroactivity in the doped state with BSA which itself served to chelate the metal ions in aqueous medium. The surface of the resulting, modified flexible electrode was characterized by XPS, SEM, and electrochemical methods. The ITO-AP-PPy electrodes were then used for the simultaneous detection of Cu 2+ , Cd 2+ , and Pb 2+ by differential pulse voltammetry (DPV). The detection limits were 11.1, 8.95, and 0.99 nM for Cu 2+ , Cd 2+ , and Pb 2+ , respectively. In addition, the modified electrodes displayed a good reproducibility, making them suitable for the determination of heavy metals in real wastewater samples.

  11. Prediction of transmittance spectra for transparent composite electrodes with ultra-thin metal layers

    Energy Technology Data Exchange (ETDEWEB)

    Zhao, Zhao; Alford, T. L., E-mail: TA@asu.edu [School for Engineering of Matter, Transport, and Energy, Arizona State University, Tempe, Arizona 85287 (United States); Khorasani, Arash Elhami [ON Semiconductor Corp., Phoenix, Arizona 85005 (United States); Theodore, N. D. [CHD-Fab, Freescale Semiconductor Inc., Tempe, Arizona 85224 (United States); Dhar, A. [Intel Corp., 2501 NW 229th Ave, Hillsboro, Oregon 97124 (United States)

    2015-11-28

    Recent interest in indium-free transparent composite-electrodes (TCEs) has motivated theoretical and experimental efforts to better understand and enhance their electrical and optical properties. Various tools have been developed to calculate the optical transmittance of multilayer thin-film structures based on the transfer-matrix method. However, the factors that affect the accuracy of these calculations have not been investigated very much. In this study, two sets of TCEs, TiO{sub 2}/Au/TiO{sub 2} and TiO{sub 2}/Ag/TiO{sub 2}, were fabricated to study the factors that affect the accuracy of transmittance predictions. We found that the predicted transmittance can deviate significantly from measured transmittance for TCEs that have ultra-thin plasmonic metal layers. The ultrathin metal layer in the TCE is typically discontinuous. When light interacts with the metallic islands in this discontinuous layer, localized surface plasmons are generated. This causes extra light absorption, which then leads to the actual transmittance being lower than the predicted transmittance.

  12. Differential reflectometry of thin film metal oxides on copper, tungsten, molybdenum and chromium

    International Nuclear Information System (INIS)

    Urban, F.K. III; Hummel, R.E.; Verink, E.D. Jr.

    1982-01-01

    A differential reflectometry study was undertaken to investigate the characteristics of thin oxide films on metal substrates. The oxides were produced by heating pure metals of copper, tungsten, molybdenum and chromium in dry oxygen. A new 'halfpolishing' technique was applied to obtain specimens with a step in oxide thickness in order to make them suitable for differential reflectometry. It was found that oxides formed this way yielded the same differential reflectograms as by electrochemical oxidation. A mathematical model involving the interaction of light with a thin corrosion product on metal substrates was applied to generate computer calculated differential reflectograms utilizing various optical constants and thicknesses of the assumed film. Three different thickness ranges have been identified. (a) For large film thicknesses, the differential reflectograms are distinguished by a sequence of interference peaks. (b) If the product of thickness and refraction index of the films is smaller than about 40 nm, no interference peaks are present. Any experimentally observed peaks in differential reflectograms of these films are caused entirely by electron interband transitions. (c) In an intermediate thickness range, superposition of interference and interband peaks are observed. (author)

  13. On the spherical nanoindentation creep of metallic glassy thin films at room temperature

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, T.H.; Ye, J.H. [Institution of Micro/Nano-Mechanical Testing Technology & Application, College of Mechanical Engineering, Zhejiang University of Technology, Hangzhou 310014 (China); Feng, Y.H. [State Key Laboratory of Nonlinear Mechanics (LNM), Institute of Mechanics, Chinese Academy of Sciences, Beijing 100190 (China); Ma, Y., E-mail: may@zjut.edu.cn [Institution of Micro/Nano-Mechanical Testing Technology & Application, College of Mechanical Engineering, Zhejiang University of Technology, Hangzhou 310014 (China)

    2017-02-08

    Metallic glassy thin films with eight kind of compositions were successfully prepared on Si substrate by magnetron sputtering. The room-temperature creep tests were performed at plastic regions for each sample relying on spherical nanoindetation. The creep deformations were studied by recording the total creep displacement and strain after 2000 s holding. More pronounced creep deformation was observed in the sample with lower glass transition temperature (T{sub g}). Strain rate sensitivity (SRS) was then calculated from the steady-state creep and exhibited a negative correlation with increasing T{sub g}. It is suggested that creep mechanism of the nano-sized metallic glass was T{sub g}-dependent, according to the demarcation of SRS values. Based on the obtained SRS, shear transformation zone (STZ) size in each sample could be estimated. The results indicated that an STZ involves about 25–60 atoms for the employed eight samples and is strongly tied to T{sub g}. The characteristic of STZ size in metallic glassy thin films was discussed in terms of applied method and deformation modes.

  14. Multi-layer thin-film electrolytes for metal supported solid oxide fuel cells

    Science.gov (United States)

    Haydn, Markus; Ortner, Kai; Franco, Thomas; Uhlenbruck, Sven; Menzler, Norbert H.; Stöver, Detlev; Bräuer, Günter; Venskutonis, Andreas; Sigl, Lorenz S.; Buchkremer, Hans-Peter; Vaßen, Robert

    2014-06-01

    A key to the development of metal-supported solid oxide fuel cells (MSCs) is the manufacturing of gas-tight thin-film electrolytes, which separate the cathode from the anode. This paper focuses the electrolyte manufacturing on the basis of 8YSZ (8 mol.-% Y2O3 stabilized ZrO2). The electrolyte layers are applied by a physical vapor deposition (PVD) gas flow sputtering (GFS) process. The gas-tightness of the electrolyte is significantly improved when sequential oxidic and metallic thin-film multi-layers are deposited, which interrupt the columnar grain structure of single-layer electrolytes. Such electrolytes with two or eight oxide/metal layers and a total thickness of about 4 μm obtain leakage rates of less than 3 × 10-4 hPa dm3 s-1 cm-2 (Δp: 100 hPa) at room temperature and therefore fulfill the gas tightness requirements. They are also highly tolerant with respect to surface flaws and particulate impurities which can be present on the graded anode underground. MSC cell tests with double-layer and multilayer electrolytes feature high power densities more than 1.4 W cm-2 at 850 °C and underline the high potential of MSC cells.

  15. Metal-assisted chemical etching of CIGS thin films for grain size analysis

    Energy Technology Data Exchange (ETDEWEB)

    Xue, Chaowei [Research and Development Centre, Hanergy Thin Film Power Group Limited, Chengdu (China); Loi, Huu-Ha; Duong, Anh; Parker, Magdalena [Failure Analysis Department, MiaSole Hi-Tech Corp., Santa Clara, CA (United States)

    2016-09-15

    Grain size of the CIGS absorber is an important monitoring factor in the CIGS solar cell manufacturing. Electron backscatter diffraction (EBSD) analysis is commonly used to perform CIGS grain size analysis in the scanning electron microscope (SEM). Although direct quantification on SEM image using the average grain intercept (AGI) method is faster and simpler than EBSD, it is hardly applicable on CIGS thin films. The challenge is that, not like polycrystalline silicon, to define grain boundaries by selective chemical etching is not easily realizable for the multi-component CIGS alloy. In this Letter, we present direct quantification of CIGS thin film grain size using the AGI method by developing metal-assisted wet chemical etching process to define CIGS grain boundaries. The calculated value is similar to EBSD result. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  16. Photovoltaic properties of in-doped CDTE thin films deposited on metallic substrates

    International Nuclear Information System (INIS)

    Wagah F Mohamad; Khalid K Mohammed

    2006-01-01

    CDTE is a promising photovoltaic material due to its nearly optimum band gap and high optical absorption coefficient. This study looks into the effect of indium doping of the CdTe thin film deposited on stainless steel substrate. The conventional cells are usually manufactured on glass substrate and offer no weight advantage over single crystal cells. Since the metal foil support can be as thin as (40-60) μm and the weight saving is significant. The spectral response of the photo current with and without indium doping was studied in detail and compared with theory. The sub gap response of the resulted structure is particularly strong and extends to wavelengths up to 1000 nm

  17. Coherent, atomically thin transition-metal dichalcogenide superlattices with engineered strain

    Science.gov (United States)

    Xie, Saien; Tu, Lijie; Han, Yimo; Huang, Lujie; Kang, Kibum; Lao, Ka Un; Poddar, Preeti; Park, Chibeom; Muller, David A.; DiStasio, Robert A.; Park, Jiwoong

    2018-03-01

    Epitaxy forms the basis of modern electronics and optoelectronics. We report coherent atomically thin superlattices in which different transition metal dichalcogenide monolayers—despite large lattice mismatches—are repeated and laterally integrated without dislocations within the monolayer plane. Grown by an omnidirectional epitaxy, these superlattices display fully matched lattice constants across heterointerfaces while maintaining an isotropic lattice structure and triangular symmetry. This strong epitaxial strain is precisely engineered via the nanoscale supercell dimensions, thereby enabling broad tuning of the optical properties and producing photoluminescence peak shifts as large as 250 millielectron volts. We present theoretical models to explain this coherent growth and the energetic interplay governing the ripple formation in these strained monolayers. Such coherent superlattices provide building blocks with targeted functionalities at the atomically thin limit.

  18. Electrical four-point probing of spherical metallic thin films coated onto micron sized polymer particles

    Energy Technology Data Exchange (ETDEWEB)

    Pettersen, Sigurd R., E-mail: sigurd.r.pettersen@ntnu.no, E-mail: jianying.he@ntnu.no; Stokkeland, August Emil; Zhang, Zhiliang; He, Jianying, E-mail: sigurd.r.pettersen@ntnu.no, E-mail: jianying.he@ntnu.no [NTNU Nanomechanical Lab, Department of Structural Engineering, Norwegian University of Science and Technology (NTNU), NO-7491 Trondheim (Norway); Kristiansen, Helge [NTNU Nanomechanical Lab, Department of Structural Engineering, Norwegian University of Science and Technology (NTNU), NO-7491 Trondheim (Norway); Conpart AS, Dragonveien 54, NO-2013 Skjetten (Norway); Njagi, John; Goia, Dan V. [Center for Advanced Materials Processing, Clarkson University, Potsdam, New York 13699-5814 (United States); Redford, Keith [Conpart AS, Dragonveien 54, NO-2013 Skjetten (Norway)

    2016-07-25

    Micron-sized metal-coated polymer spheres are frequently used as filler particles in conductive composites for electronic interconnects. However, the intrinsic electrical resistivity of the spherical thin films has not been attainable due to deficiency in methods that eliminate the effect of contact resistance. In this work, a four-point probing method using vacuum compatible piezo-actuated micro robots was developed to directly investigate the electric properties of individual silver-coated spheres under real-time observation in a scanning electron microscope. Poly(methyl methacrylate) spheres with a diameter of 30 μm and four different film thicknesses (270 nm, 150 nm, 100 nm, and 60 nm) were investigated. By multiplying the experimental results with geometrical correction factors obtained using finite element models, the resistivities of the thin films were estimated for the four thicknesses. These were higher than the resistivity of bulk silver.

  19. Photovoltaic effect in transition metal modified polycrystalline BiFeO3 thin films

    International Nuclear Information System (INIS)

    Puli, Venkata Sreenivas; Chrisey, Douglas B; Pradhan, Dhiren Kumar; Katiyar, Rajesh Kumar; Misra, Pankaj; Scott, J F; Katiyar, Ram S; Coondoo, Indrani; Panwar, Neeraj

    2014-01-01

    We report photovoltaic (PV) effect in multiferroic Bi 0.9 Sm 0.1 Fe 0.95 Co 0.05 O 3 (BSFCO) thin films. Transition metal modified polycrystalline BiFeO 3 (BFO) thin films have been deposited on Pt/TiO 2 /SiO 2 /Si substrate successfully through pulsed laser deposition (PLD). PV response is observed under illumination both in sandwich and lateral electrode configurations. The open-circuit voltage (V oc ) and the short-circuit current density (J sc ) of the films in sandwich electrode configuration under illumination are measured to be 0.9 V and −0.051 µA cm −2 . Additionally, we report piezoresponse for BSFCO films, which confirms ferroelectric piezoelectric behaviour. (paper)

  20. Laser assisted modification and chemical metallization of electron-beam deposited ceria thin films

    International Nuclear Information System (INIS)

    Krumov, E.; Starbov, N.; Starbova, K.; Perea, A.; Solis, J.

    2009-01-01

    Excimer laser processing is applied for tailoring the surface morphology and phase composition of CeO 2 ceramic thin films. E-beam evaporation technique is used to deposit samples on stainless steel and silicate glass substrates. The films are then irradiated with ArF* excimer laser pulses under different exposure conditions. Scanning electron microscopy, optical spectrophotometry, X-ray diffractometry and EDS microanalysis are used to characterize the non-irradiated and laser-processed films. Upon UV laser exposure there is large increase of the surface roughness that is accompanied by photo-darkening and ceria reduction. It is shown that the laser induced changes in the CeO 2 films facilitate the deposition of metal nano-aggregates in a commercial copper electroless plating bath. The significance of laser modification as a novel approach for the production of CeO 2 based thin film catalysts is discussed.

  1. Laser assisted modification and chemical metallization of electron-beam deposited ceria thin films

    Energy Technology Data Exchange (ETDEWEB)

    Krumov, E., E-mail: emodk@clf.bas.bg [Central Laboratory of Photoprocesses ' Acad. Jordan Malinowski' , Bulgarian Academy of Sciences, Acad. Georgy Bonchev Str., bl. 109, 1113 Sofia (Bulgaria); Starbov, N.; Starbova, K. [Central Laboratory of Photoprocesses ' Acad. Jordan Malinowski' , Bulgarian Academy of Sciences, Acad. Georgy Bonchev Str., bl. 109, 1113 Sofia (Bulgaria); Perea, A.; Solis, J. [Instituto de Optica ' Daza de Valdes' , CSIC, 28006 Madrid (Spain)

    2009-11-15

    Excimer laser processing is applied for tailoring the surface morphology and phase composition of CeO{sub 2} ceramic thin films. E-beam evaporation technique is used to deposit samples on stainless steel and silicate glass substrates. The films are then irradiated with ArF* excimer laser pulses under different exposure conditions. Scanning electron microscopy, optical spectrophotometry, X-ray diffractometry and EDS microanalysis are used to characterize the non-irradiated and laser-processed films. Upon UV laser exposure there is large increase of the surface roughness that is accompanied by photo-darkening and ceria reduction. It is shown that the laser induced changes in the CeO{sub 2} films facilitate the deposition of metal nano-aggregates in a commercial copper electroless plating bath. The significance of laser modification as a novel approach for the production of CeO{sub 2} based thin film catalysts is discussed.

  2. The effect of polyimide imidization conditions on adhesion strength of thin metal films on polyimide substrates

    CERN Document Server

    Yoo, S H

    1999-01-01

    The effects of Ar sup + RF plasma precleaning and polyimide curing conditions on the peel strength between Al thin films and polyimides have been studied. The BPDA-PDA polyimide precursor of PI-2611 (Du pont) was spin-coated and cured under various imidization conditions. The cured polyimide substrates were in-situ AR sup + RF plasma cleaned prior to metal deposition. Al-1 % Si-0.5 % Cu thin films were deposited onto the polyimide substrates by using DC magnetron sputtering. The peel strength was enhanced by Ar sup + RF plasma precleaning. The Al/modified PI specimen failed cohesively in the polyimide. The polyimide curing conditions strongly affect the peel strength in the Al/modified PI system.

  3. Optimization of Phase Change Memory with Thin Metal Inserted Layer on Material Properties

    Science.gov (United States)

    Harnsoongnoen, Sanchai; Sa-Ngiamsak, Chiranut; Siritaratiwat, Apirat

    This works reports, for the first time, the thorough study and optimisation of Phase Change Memory (PCM) structure with thin metal inserted chalcogenide via electrical resistivity (ρ) using finite element modeling. PCM is one of the best candidates for next generation non-volatile memory. It has received much attention recently due to its fast write speed, non-destructive readout, superb scalability, and great compatibility with current silicon-based mass fabrication. The setback of PCM is a high reset current typically higher than 1mA based on 180nm lithography. To reduce the reset current and to solve the over-programming failure, PCM with thin metal inserted chalcogenide (bottom chalcogenide/metal inserted/top chalcogenide) structure has been proposed. Nevertheless, reports on optimisation of the electrical resistivity using the finite element method for this new PCM structure have never been published. This work aims to minimize the reset current of this PCM structure by optimizing the level of the electrical resistivity of the PCM profile using the finite element approach. This work clearly shows that PCM characteristics are strongly affected by the electrical resistivity. The 2-D simulation results reveal clearly that the best thermal transfer of and self-joule-heating at the bottom chalcogenide layer can be achieved under conditions; ρ_bottom chalcogenide > ρ_metal inserted > ρ_top chalcogenide More specifically, the optimized electrical resistivity of PCMTMI is attained with ρ_top chalcogenide: ρ_metal inserted: ρ_bottom chalcogenide ratio of 1:6:16 when ρ_top chalcogenide is 10-3 Ωm. In conclusion, high energy efficiency can be obtained with the reset current as low as 0.3mA and with high speed operation of less than 30ns.

  4. Metals pollution tracing in the sewerage network using the diffusive gradients in thin films technique.

    Science.gov (United States)

    Thomas, P

    2009-01-01

    Diffusive Gradients in Thin-films (DGT) is a quantitative, passive monitoring technique that can be used to measure concentrations of trace species in situ in solutions. Its potential for tracing metals pollution in the sewer system has been investigated by placing the DGT devices into sewage pumping stations and into manholes, to measure the concentration of certain metals in the catchment of a sewage treatment works with a known metals problem. In addition the methodology and procedure of using the DGT technique in sewers was investigated. Parameters such as temperature and pH were measured to ensure they were within the limits required by the DGT devices, and the optimum deployment time was examined. It was found that although the results given by the DGT technique could not be considered to be fully quantitative, they could be used to identify locations that were showing an excess concentration of metals, and hence trace pollution back to its source. The DGT technique is 'user friendly' and requires no complicated equipment for deployment or collection, and minimal training for use. It is thought that this is the first time that the DGT technique has been used in situ in sewers for metals pollution tracing.

  5. Thin film CdTe solar cells by close spaced sublimation: Recent results from pilot line

    International Nuclear Information System (INIS)

    Siepchen, B.; Drost, C.; Späth, B.; Krishnakumar, V.; Richter, H.; Harr, M.; Bossert, S.; Grimm, M.; Häfner, K.; Modes, T.; Zywitzki, O.; Morgner, H.

    2013-01-01

    CdTe is an attractive material to produce high efficient and low cost thin film solar cells. The semiconducting layers of this kind of solar cell can be deposited by the Close Spaced Sublimation (CSS) process. The advantages of this technique are high deposition rates and an excellent utilization of the raw material, leading to low production costs and competitive module prices. CTF Solar GmbH is offering equipment and process knowhow for the production of CdTe solar modules. For further improvement of the technology, research is done at a pilot line, which covers all relevant process steps for manufacture of CdTe solar cells. Herein, we present the latest results from the process development and our research activities on single functional layers as well as for complete solar cell devices. Efficiencies above 13% have already been obtained with Cu-free back contacts. An additional focus is set on different transparent conducting oxide materials for the front contact and a Sb 2 Te 3 based back contact. - Highlights: ► Laboratory established on industrial level for CdTe solar cell research ► 13.0% cell efficiency with our standard front contact and Cu-free back contact ► Research on ZnO-based transparent conducting oxide and Sb 2 Te 3 back contacts ► High resolution scanning electron microscopy analysis of ion polished cross section

  6. Notes on the photoinduced characteristics of transition metal doped and undoped titanium dioxide thin films

    Czech Academy of Sciences Publication Activity Database

    Kment, Štěpán; Kmentová, Hana; Hubička, Zdeněk; Klusoň, Jan; Krýsa, J.; Církva, Vladimír; Gregora, Ivan; Šolcová, Olga; Jastrabík, Lubomír

    2010-01-01

    Roč. 348, č. 1 (2010), s. 198-205 ISSN 0021-9797 R&D Projects: GA ČR GA202/08/1009; GA AV ČR KAN301370701; GA AV ČR KAN400720701 Institutional research plan: CEZ:AV0Z10100522; CEZ:AV0Z40720504 Keywords : sol-gel * thin layers * metal doped TiO 2 * IPCE * photocurrent * photocatalysis Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.068, year: 2010

  7. Optical nonlinearities of excitonic states in atomically thin 2D transition metal dichalcogenides

    Energy Technology Data Exchange (ETDEWEB)

    Soh, Daniel Beom Soo [Sandia National Lab. (SNL-CA), Livermore, CA (United States). Proliferation Signatures Discovery and Exploitation Department

    2017-08-01

    We calculated the optical nonlinearities of the atomically thin monolayer transition metal dichalcogenide material (particularly MoS2), particularly for those linear and nonlinear transition processes that utilize the bound exciton states. We adopted the bound and the unbound exciton states as the basis for the Hilbert space, and derived all the dynamical density matrices that provides the induced current density, from which the nonlinear susceptibilities can be drawn order-by-order via perturbative calculations. We provide the nonlinear susceptibilities for the linear, the second-harmonic, the third-harmonic, and the kerr-type two-photon processes.

  8. A nanohole in a thin metal film as an efficient nonlinear optical element

    Energy Technology Data Exchange (ETDEWEB)

    Konstantinova, T. V.; Melent' ev, P. N.; Afanas' ev, A. E. [Russian Academy of Sciences, Institute of Spectroscopy (Russian Federation); Kuzin, A. A.; Starikov, P. A.; Baturin, A. S. [Moscow Institute of Physics and Technology (Russian Federation); Tausenev, A. V.; Konyashchenko, A. V. [OOO Avesta-proekt (Russian Federation); Balykin, V. I., E-mail: balykin@isan.tyroitsk.ru [Russian Academy of Sciences, Institute of Spectroscopy (Russian Federation)

    2013-07-15

    The nonlinear optical properties of single nanoholes and nanoslits fabricated in gold and aluminum nanofilms are studied by third harmonic generation (THG). It is shown that the extremely high third-order optical susceptibility of aluminum and the presence of strong plasmon resonance of a single nanohole in an aluminum film make possible an efficient nanolocalized radiation source at the third harmonic frequency. The THG efficiency for a single nanohole in a thin metal film can be close to unity for an exciting laser radiation intensity on the order of 10{sup 13} W/cm{sup 2}.

  9. Two-dimensional discrete dislocation models of deformation in polycrystalline thin metal films on substrates

    International Nuclear Information System (INIS)

    Hartmaier, Alexander; Buehler, Markus J.; Gao, Huajian

    2005-01-01

    The time-dependent irreversible deformation of polycrystalline thin metal films on substrates is investigated using two-dimensional discrete dislocation dynamics models incorporating essential parameters determined from atomistic studies. The work is focused on the mechanical properties of uncapped films, where diffusive processes play an important role. The simulations incorporate dislocation climb along the grain boundary as well as conservative glide. Despite of severe limitations of the two-dimensional dislocation models, the simulation results are found to largely corroborate experimental findings on different dominant deformation mechanisms at different film thicknesses

  10. Pulsed injection metal organic chemical vapour deposition and characterisation of thin CaO films

    International Nuclear Information System (INIS)

    Borges, R.P.; Ferreira, P.; Saraiva, A.; Goncalves, R.; Rosa, M.A.; Goncalves, A.P.; Silva, R.C. da; Magalhaes, S.; Lourenco, M.J.V.; Santos, F.J.V.; Godinho, M.

    2009-01-01

    Thin films of CaO were grown on silicon (Si) and lanthanum aluminate (LaAlO 3 ) substrates by pulsed injection metal-organic chemical vapour deposition in a vertical injection MOCVD system. Growth parameters were systematically varied to study their effect on film growth and quality and to determine the optimal growth conditions for this material. Film quality and growth rate were evaluated by atomic force microscopy, X-ray diffraction and Rutherford Backscattering Spectroscopy measurements. Optimised conditions allowed growing transparent, single phase films textured along the (0 0 l) direction.

  11. Mechanical properties of metal-organic frameworks: An indentation study on epitaxial thin films

    Science.gov (United States)

    Bundschuh, S.; Kraft, O.; Arslan, H. K.; Gliemann, H.; Weidler, P. G.; Wöll, C.

    2012-09-01

    We have determined the hardness and Young's modulus of a highly porous metal-organic framework (MOF) using a standard nanoindentation technique. Despite the very low density of these films, 1.22 g cm-3, Young's modulus reaches values of almost 10 GPa for HKUST-1, demonstrating that this porous coordination polymer is substantially stiffer than normal polymers. This progress in characterizing mechanical properties of MOFs has been made possible by the use of high quality, oriented thin films grown using liquid phase epitaxy on modified Au substrates.

  12. Correlation of morphology and barrier properties of thin microwave plasma polymer films on metal substrate

    International Nuclear Information System (INIS)

    Barranco, V.; Carpentier, J.; Grundmeier, G.

    2004-01-01

    The barrier properties of thin model organosilicon plasma polymers layers on iron are characterised by means of electrochemical impedance spectroscopy (EIS). Tailored thin plasma polymers of controlled morphology and chemical composition were deposited from a microwave discharge. By the analysis of the obtained impedance diagrams, the evolution of the water uptake φ, coating resistance and polymer capacitance with immersion time were monitored and the diffusion coefficients of the water through the films were calculated. The impedance data correlated well with the chemical structure and morphology of the plasma polymer films with a thickness of less than 100 nm. The composition of the films were determined by means of infrared reflection absorption spectroscopy (IRRAS), X-ray photoelectron spectroscopy (XPS) and time-of-flight secondary ion mass spectrometry (ToF-SIMS). The morphology of the plasma polymer surface and the interface between the plasma polymer and the metal were characterised using atomic force microscopy (AFM). It could be shown that, at higher pressure, the film roughness increases which is probably due to the adsorption of plasma polymer nanoparticles formed in the plasma bulk and the faster film growth. This leads to voids with a size of a few tens of nanometers at the polymer/metal interface. The film roughness increases from the interface to the outer surface of the film. By lowering the pressure and thereby slowing the deposition rate, the plasma polymers perfectly imitate the substrate topography and lead to an excellent blocking of the metal surface. Moreover, the ratio of siloxane bonds to methyl-silyl groups increases which implies that the crosslink density is higher at lower deposition rate. The EIS data consistently showed higher coating resistance as well as lower interfacial capacitance values and a better stability over time for the film deposited at slower pressure. The diffusion coefficient of water in thin and ultra-thin plasma

  13. A nanohole in a thin metal film as an efficient nonlinear optical element

    International Nuclear Information System (INIS)

    Konstantinova, T. V.; Melent’ev, P. N.; Afanas’ev, A. E.; Kuzin, A. A.; Starikov, P. A.; Baturin, A. S.; Tausenev, A. V.; Konyashchenko, A. V.; Balykin, V. I.

    2013-01-01

    The nonlinear optical properties of single nanoholes and nanoslits fabricated in gold and aluminum nanofilms are studied by third harmonic generation (THG). It is shown that the extremely high third-order optical susceptibility of aluminum and the presence of strong plasmon resonance of a single nanohole in an aluminum film make possible an efficient nanolocalized radiation source at the third harmonic frequency. The THG efficiency for a single nanohole in a thin metal film can be close to unity for an exciting laser radiation intensity on the order of 10 13 W/cm 2

  14. Thermal diffusivity of a metallic thin layer using the time-domain thermo reflectance technique

    International Nuclear Information System (INIS)

    Battaglia, J-L; Kusiak, A; Rossignol, C; Chigarev, N

    2007-01-01

    The time domain thermo reflectance (TDTR) is widely used in the field of acoustic and thermal characterization of thin layers at the nano and micro scale. In this paper, we propose to derive a simple analytical expression of the thermal diffusivity of the layer. This relation is based on the analytical solution of one-dimensional heat transfer in the medium using integral transforms. For metals, the two-temperature model shows that the capacitance effect at the short times is essentially governed by the electronic contribution

  15. Metal Oxides Doped PPY-PVA Blend Thin Films Based Gas Sensor

    Directory of Open Access Journals (Sweden)

    D. B. DUPARE

    2009-02-01

    Full Text Available Synthesis of metal oxides doped polypyrrole–polyvinyl alcohol blend thin films by in situ chemical oxidative polymerization, using microwave oven on glass substrate for development of Ammonia and Trimethyl ammine hazardous gas sensor. The all experimental process carried out at room temperature(304 K. These polymer materials were characterized by Chemical analyses, spectral studies (UV-visible and IR and conductivity measurement by four –probe technique. The surface morphology as observed in the SEM image was observed to be uniformly covering the entire substrate surface. The sensor was used for different concentration (ppm of TMA and Ammonia gas investigation at room temperature (304 k. This study found to possess improved electrical, mechanical and environmental stability metal oxides doped PPY-PVA films.

  16. Semiconductor/metal nanocomposites formed by in situ reduction method in multilayer thin films

    International Nuclear Information System (INIS)

    Song Yanli; Wang Enbo; Tian Chungui; Mao Baodong; Wang Chunlei

    2009-01-01

    A layer-by-layer adsorption and in situ reduction method was adopted for synthesizing semiconductor/metal nanocomposites in multilayer ultra-thin films. Alternate adsorption of ZnO nanoparticles modified with poly(ethyleneimine), hydrogentetrachloroaurate and poly(styrenesulfonate) sodium results in the formation of ZnO/AuCl 4 - -loaded multilayer films. In situ reduction of the incorporated metal ions by heating yields ZnO/Au nanocomposites in the films. UV-vis absorption spectroscopy and X-ray photoelectron spectroscopy were used to characterize the components of the composite films. UV-vis spectra indicate regular growth of the films. The electrochemistry behavior of the multilayer films was studied in detail on indium tin oxide electrode. The combined results suggest that the layer-by-layer adsorption and subsequent reduction method used here provides an effective way to synthesize ZnO/Au nanocomposites in the polymer matrix

  17. Laser deposition rates of thin films of selected metals and alloys

    DEFF Research Database (Denmark)

    Cazzaniga, Andrea Carlo; Canulescu, Stela; Schou, Jørgen

    Thin films of Cu, Zn and Sn as well as mixtures of these elements have been produced by Pulsed Laser Deposition (PLD). The deposition rate of single and multicomponent metallic targets was determined. The strength of PLD is that the stoichiometry of complex compounds, even of complicated alloys...... or metal oxides, can be preserved from target to film. We apply this technique to design films of a mixture of Cu, Zn and Sn, which are constituents of the chalcogenide CZTS, which has a composition close to Cu2ZnSnS4. This compound is expected to be an important candidate for absorbers in new solar cells...... for alloys of the different elements as well as compounds with S will be presented....

  18. Oxygen abundance in metal-poor dwarfs, derived from the forbidden line

    Science.gov (United States)

    Spite, M.; Spite, F.

    1991-12-01

    The oxygen abundance is redetermined in a few metal-poor dwarfs, using the oxygen forbidden line at 630 nm rather than the oxygen triplet at 777 nm previously used by Abia and Rebolo (1989). The ratios form O/Fe are clearly lower than the previous ones and are in agreement with the ratios found in the metal-poor red giants, suggesting that no real difference exists between dwarfs and giants. Finally, it can be argued that, pending the acquisition of additional information, the oxygen abundances derived from the forbidden line are more reliable than the abundances found from the triplet.

  19. OXYGEN METALLICITY DETERMINATIONS FROM OPTICAL EMISSION LINES IN EARLY-TYPE GALAXIES

    International Nuclear Information System (INIS)

    Athey, Alex E.; Bregman, Joel N.

    2009-01-01

    We measured the oxygen abundances of the warm (T ∼ 10 4 K) phase of gas in seven early-type galaxies through long-slit observations. A template spectra was constructed from galaxies void of warm gas and subtracted from the emission-line galaxies, allowing for a clean measurement of the nebular lines. The ratios of the emission lines are consistent with photoionization, which likely originates from the ultraviolet flux of postasymototic giant branch stars. We employ H II region photoionization models to determine a mean oxygen metallicity of 1.01 ± 0.50 solar for the warm interstellar medium (ISM) in this sample. This warm ISM 0.5-1.5 solar metallicity is consistent with modern determinations of the metallicity in the hot (T ∼ 10 6 -10 7 K) ISM and the upper range of this warm ISM metallicity is consistent with stellar population metallicity determinations. A solar metallicity of the warm ISM favors an internal origin for the warm ISM such as asymptotic giant branch mass loss within the galaxy.

  20. Deposition of highly (111)-oriented PZT thin films by using metal organic chemical deposition

    CERN Document Server

    Bu, K H; Choi, D K; Seong, W K; Kim, J D

    1999-01-01

    Lead zirconate titanate (PZT) thin films have been grown on Pt/Ta/SiNx/Si substrates by using metal organic chemical vapor deposition with Pb(C sub 2 H sub 5) sub 4 , Zr(O-t-C sub 4 H sub 9) sub 4 , and Ti(O-i-C sub 3 H sub 7) sub 4 as source materials and O sub 2 as an oxidizing gas. The Zr fraction in the thin films was controlled by varying the flow rate of the Zr source material. The crystal structure and the electrical properties were investigated as functions of the composition. X-ray diffraction analysis showed that at a certain range of Zr fraction, highly (111)-oriented PZT thin films with no pyrochlore phases were deposited. On the other hand, at low Zr fractions, there were peaks from Pb-oxide phases. At high Zr fractions, peaks from pyrochlore phase were seen. The films also showed good electrical properties, such as a high dielectric constant of more than 1200 and a low coercive voltage of 1.35 V.

  1. Chemical resistance of thin film materials based on metal oxides grown by atomic layer deposition

    International Nuclear Information System (INIS)

    Sammelselg, Väino; Netšipailo, Ivan; Aidla, Aleks; Tarre, Aivar; Aarik, Lauri; Asari, Jelena; Ritslaid, Peeter; Aarik, Jaan

    2013-01-01

    Etching rate of technologically important metal oxide thin films in hot sulphuric acid was investigated. The films of Al-, Ti-, Cr-, and Ta-oxides studied were grown by atomic layer deposition (ALD) method on silicon substrates from different precursors in large ranges of growth temperatures (80–900 °C) in order to reveal process parameters that allow deposition of coatings with higher chemical resistance. The results obtained demonstrate that application of processes that yield films with lower concentration of residual impurities as well as crystallization of films in thermal ALD processes leads to significant decrease of etching rate. Crystalline films of materials studied showed etching rates down to values of < 5 pm/s. - Highlights: • Etching of atomic layer deposited thin metal oxide films in hot H 2 SO 4 was studied. • Smallest etching rates of < 5 pm/s for TiO 2 , Al 2 O 3 , and Cr 2 O 3 were reached. • Highest etching rate of 2.8 nm/s for Al 2 O 3 was occurred. • Remarkable differences in etching of non- and crystalline films were observed

  2. Bi2O3 nanoparticles encapsulated in surface mounted metal-organic framework thin films

    Science.gov (United States)

    Guo, Wei; Chen, Zhi; Yang, Chengwu; Neumann, Tobias; Kübel, Christian; Wenzel, Wolfgang; Welle, Alexander; Pfleging, Wilhelm; Shekhah, Osama; Wöll, Christof; Redel, Engelbert

    2016-03-01

    We describe a novel procedure to fabricate a recyclable hybrid-photocatalyst based on Bi2O3@HKUST-1 MOF porous thin films. Bi2O3 nanoparticles (NPs) were synthesized within HKUST-1 (or Cu3(BTC)2) surface-mounted metal-organic frame-works (SURMOFs) and characterized using X-ray diffraction (XRD), a quartz crystal microbalance (QCM) and transmission electron microscopy (TEM). The Bi2O3 semiconductor NPs (diameter 1-3 nm)/SURMOF heterostructures exhibit superior photo-efficiencies compared to NPs synthesized using conventional routes, as demonstrated via the photodegradation of the nuclear fast red (NFR) dye.We describe a novel procedure to fabricate a recyclable hybrid-photocatalyst based on Bi2O3@HKUST-1 MOF porous thin films. Bi2O3 nanoparticles (NPs) were synthesized within HKUST-1 (or Cu3(BTC)2) surface-mounted metal-organic frame-works (SURMOFs) and characterized using X-ray diffraction (XRD), a quartz crystal microbalance (QCM) and transmission electron microscopy (TEM). The Bi2O3 semiconductor NPs (diameter 1-3 nm)/SURMOF heterostructures exhibit superior photo-efficiencies compared to NPs synthesized using conventional routes, as demonstrated via the photodegradation of the nuclear fast red (NFR) dye. Electronic supplementary information (ESI) available. See DOI: 10.1039/c6nr00532b

  3. Epitaxial Oxide Thin Films Grown by Solid Source Metal-Organic Chemical Vapor Deposition.

    Science.gov (United States)

    Lu, Zihong

    1995-01-01

    The conventional liquid source metal-organic chemical vapor deposition (MOCVD) technique is capable of producing large area, high quality, single crystal semiconductor films. However, the growth of complex oxide films by this method has been hampered by a lack of suitable source materials. While chemists have been actively searching for new source materials, the research work reported here has demonstrated the successful application of solid metal-organic sources (based on tetramethylheptanedionate) to the growth of high quality thin films of binary compound cerium dioxide (CeO_2), and two more complex materials, the ternary compound lithium niobate (LiNbO_3), with two cations, and the quaternary compound strontium barium niobate (SBN), with three cations. The growth of CeO_2 thin films on (1012)Al_2O_3 substrates has been used as a model to study the general growth behavior of oxides. Factors affecting deposition rate, surface morphology, out-of-plane mosaic structure, and film orientation have been carefully investigated. A kinetic model based on gas phase prereaction is proposed to account for the substrate temperature dependence of film orientation found in this system. Atomically smooth, single crystal quality cerium dioxide thin films have been obtained. Superconducting YBCO films sputtered on top of solid source MOCVD grown thin cerium dioxide buffer layers on sapphire have been shown to have physical properties as good as those of YBCO films grown on single crystal MgO substrates. The thin film growth of LiNbO_3 and Sr_{1-x}Ba _{x}Nb_2 O_6 (SBN) was more complex and challenging. Phase purity, transparency, in-plane orientation, and the ferroelectric polarity of LiNbO _3 films grown on sapphire substrates was investigated. The first optical quality, MOCVD grown LiNbO _3 films, having waveguiding losses of less than 2 dB/cm, were prepared. An important aspect of the SBN film growth studies involved finding a suitable single crystal substrate material. Mg

  4. Design and development of an in-line sputtering system and process development of thin film multilayer neutron supermirrors

    Energy Technology Data Exchange (ETDEWEB)

    Biswas, A.; Sampathkumar, R.; Kumar, Ajaya; Bhattacharyya, D.; Sahoo, N. K. [Atomic and Molecular Physics Division, Bhabha Atomic Research Centre, Mumbai 400 085 (India); Lagoo, K. D.; Veerapur, R. D.; Padmanabhan, M.; Puri, R. K. [Division of Remote Handling and Robotics, Bhabha Atomic Research Centre, Mumbai 400 085 (India); Bhattacharya, Debarati; Singh, Surendra; Basu, S. [Solid State Physics Division, Bhabha Atomic Research Centre, Mumbai 400 085 (India)

    2014-12-15

    Neutron supermirrors and supermirror polarizers are thin film multilayer based devices which are used for reflecting and polarizing neutrons in various neutron based experiments. In the present communication, the in-house development of a 9 m long in-line dc sputtering system has been described which is suitable for deposition of neutron supermirrors on large size (1500 mm × 150 mm) substrates and in large numbers. The optimisation process of deposition of Co and Ti thin film, Co/Ti periodic multilayers, and a-periodic supermirrors have also been described. The system has been used to deposit thin film multilayer supermirror polarizers which show high reflectivity up to a reasonably large critical wavevector transfer of ∼0.06 Å{sup −1} (corresponding to m = 2.5, i.e., 2.5 times critical wavevector transfer of natural Ni). The computer code for designing these supermirrors has also been developed in-house.

  5. Local, atomic-level elastic strain measurements of metallic glass thin films by electron diffraction

    Energy Technology Data Exchange (ETDEWEB)

    Ebner, C. [Physics of Nanostructured Materials, Faculty of Physics, University of Vienna, Boltzmanngasse 5, 1090 Vienna (Austria); Sarkar, R. [Department of Materials Science and Engineering, School for Engineering of Matter Transport and Energy, Arizona State University, Tempe 85287 (United States); Rajagopalan, J. [Department of Materials Science and Engineering, School for Engineering of Matter Transport and Energy, Arizona State University, Tempe 85287 (United States); Department of Mechanical and Aerospace Engineering, School for Engineering of Matter Transport and Energy, Arizona State University, Tempe 85287 (United States); Rentenberger, C., E-mail: christian.rentenberger@univie.ac.at [Physics of Nanostructured Materials, Faculty of Physics, University of Vienna, Boltzmanngasse 5, 1090 Vienna (Austria)

    2016-06-15

    A novel technique is used to measure the atomic-level elastic strain tensor of amorphous materials by tracking geometric changes of the first diffuse ring of selected area electron diffraction patterns (SAD). An automatic procedure, which includes locating the centre and fitting an ellipse to the diffuse ring with sub-pixel precision is developed for extracting the 2-dimensional strain tensor from the SAD patterns. Using this technique, atomic-level principal strains from micrometre-sized regions of freestanding amorphous Ti{sub 0.45}Al{sub 0.55} thin films were measured during in-situ TEM tensile deformation. The thin films were deformed using MEMS based testing stages that allow simultaneous measurement of the macroscopic stress and strain. The calculated atomic-level principal strains show a linear dependence on the applied stress, and good correspondence with the measured macroscopic strains. The calculated Poisson’s ratio of 0.23 is reasonable for brittle metallic glasses. The technique yields a strain accuracy of about 1×10{sup −4} and shows the potential to obtain localized strain profiles/maps of amorphous thin film samples. - Highlights: • A TEM method to measure elastic strain in metallic glass films is proposed. • Method is based on tracking geometric changes in TEM diffraction patterns. • An automatic procedure is developed for extracting the local strain tensor. • Atomic-level strain in amorphous TiAl film was analysed during in-situ deformation. • Capability of the method to obtain micrometer scale strain profiles/maps is shown.

  6. Influence of various thickness metallic interlayers on opto-electric and mechanical properties of AZO thin films on PET substrates

    Science.gov (United States)

    Chang, R. C.; Li, T. C.; Lin, C. W.

    2012-02-01

    Various thickness metallic interlayers to improve the opto-electric and mechanical properties of aluminum-doped zinc oxide (AZO) thin films deposited on flexible polyethylene terephtalate (PET) substrates are studied. The effects of the interlayers on the resistance and transmittance of the AZO thin films are discussed. The result shows that the metallic interlayers effectively improve the electric resistance but reduce the optical transmittance of the AZO thin films. These phenomena become more obvious as the interlayer thickness increases. However, the AZO with an aluminum interlayer still behaves an acceptable transmittance. Moreover, mechanical tests indicate that the aluminum interlayer increases the hardness and modulus, and reduce the residual stress of the AZO thin films. In contrast, the silver and copper interlayers decrease the AZO's mechanical properties. Comparing to those without any interlayer, the results show that the best interlayer is the 6 nm thick aluminum film.

  7. Antimicrobial properties of Zr–Cu–Al–Ag thin film metallic glass

    International Nuclear Information System (INIS)

    Chen, Hsien-Wei; Hsu, Kai-Chieh; Chan, Yu-Chen; Duh, Jenq-Gong; Lee, Jyh-Wei; Jang, Jason Shian-Ching; Chen, Guo-Ju

    2014-01-01

    Metallic glass as a prominent class of structure and multifunctional materials exhibits several unique properties in mechanical, electrochemical, and thermal properties. This study aimed to realize the advantage of biomedical application and to promote the attainable size of metallic glasses by the physical vapor deposition. The Zr–Cu–Al–Ag thin film metallic glass (TFMG) was deposited on silicon wafer and SUS304 stainless steel substrates by magnetron sputtering with single target. For X-ray diffraction analysis, all TFMGs revealed typical broad peaks around the incident angle of 30 to 50°, suggesting that coatings possess amorphous structure. In addition, diffuse halo ring patterns of transmission electron microscopy indicated a fine amorphorization for TFMG via sputtering process. The variation of surface roughness showed that TFMG derived from higher power of metallic targets revealed rougher morphology. Besides, the roughness of SUS304 stainless steel substrate significantly reduced from 7 nm to about 1 nm after TFMGs were deposited. The microbes of Candida albicans, Escherichia coli, and Pseudomonas aeruginosa were used and cultivated on the TFMG coatings with medium to investigate the antimicrobial properties. In the incubation experiment, the growth of each microbe was recorded by a digital photography system and the growth area was calculated by image processing software. The growth area of the microbes on the TFMG was mostly smaller than that on SUS304 stainless steel ones within incubation time of 72 h, indicating that the TFMGs reveal better antimicrobial capability. Moreover, the coatings exhibit a particularly long-term antimicrobial effect for P. aeruginosa. In summary, the Zr–Cu–Al–Ag prepared by sputtering with a single target device presented superior glass forming ability, and coatings with copper and silver constituents revealed significantly antimicrobial properties. Besides, the surface roughness is another factor to affect the

  8. Antimicrobial properties of Zr–Cu–Al–Ag thin film metallic glass

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Hsien-Wei; Hsu, Kai-Chieh; Chan, Yu-Chen [Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan (China); Duh, Jenq-Gong, E-mail: jgd@mx.nthu.edu.tw [Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan (China); Lee, Jyh-Wei [Department of Materials Engineering, Ming Chi University of Technology, Taipei, Taiwan (China); Center for Thin Film Technologies and Applications, Mingchi University of Technology, Taipei, Taiwan (China); Jang, Jason Shian-Ching [Department of Mechanical Engineering, Institute of Materials Science and Engineering, National Central University, Chung-Li, Taiwan (China); Chen, Guo-Ju [Department of Materials Science and Engineering, I-Shou University, Kaohsiung, Taiwan (China)

    2014-06-30

    Metallic glass as a prominent class of structure and multifunctional materials exhibits several unique properties in mechanical, electrochemical, and thermal properties. This study aimed to realize the advantage of biomedical application and to promote the attainable size of metallic glasses by the physical vapor deposition. The Zr–Cu–Al–Ag thin film metallic glass (TFMG) was deposited on silicon wafer and SUS304 stainless steel substrates by magnetron sputtering with single target. For X-ray diffraction analysis, all TFMGs revealed typical broad peaks around the incident angle of 30 to 50°, suggesting that coatings possess amorphous structure. In addition, diffuse halo ring patterns of transmission electron microscopy indicated a fine amorphorization for TFMG via sputtering process. The variation of surface roughness showed that TFMG derived from higher power of metallic targets revealed rougher morphology. Besides, the roughness of SUS304 stainless steel substrate significantly reduced from 7 nm to about 1 nm after TFMGs were deposited. The microbes of Candida albicans, Escherichia coli, and Pseudomonas aeruginosa were used and cultivated on the TFMG coatings with medium to investigate the antimicrobial properties. In the incubation experiment, the growth of each microbe was recorded by a digital photography system and the growth area was calculated by image processing software. The growth area of the microbes on the TFMG was mostly smaller than that on SUS304 stainless steel ones within incubation time of 72 h, indicating that the TFMGs reveal better antimicrobial capability. Moreover, the coatings exhibit a particularly long-term antimicrobial effect for P. aeruginosa. In summary, the Zr–Cu–Al–Ag prepared by sputtering with a single target device presented superior glass forming ability, and coatings with copper and silver constituents revealed significantly antimicrobial properties. Besides, the surface roughness is another factor to affect the

  9. Dislocation Line Tensions in the Noble Metals, the Alkali Metals and beta-Brass

    Energy Technology Data Exchange (ETDEWEB)

    Pettersson, B; Malen, K

    1971-06-15

    The line tension for a straight partial dislocation which can produce the necessary slip for a martensitic phase transformation of the bcc-fcc or bcc-hcp type has been calculated in ordered 6-brass and in Li, Na and K. Also the line tension for a Shockley partial dislocation in Cu, Ag and Au has been calculated. Negative line tension is found for certain dislocation directions, and the possible influence of this on the stability of a stacking fault bounded by these partials is discussed

  10. Two-dimensional transition metal dichalcogenides as atomically thin semiconductors: opportunities and challenges.

    Science.gov (United States)

    Duan, Xidong; Wang, Chen; Pan, Anlian; Yu, Ruqin; Duan, Xiangfeng

    2015-12-21

    The discovery of graphene has ignited intensive interest in two-dimensional layered materials (2DLMs). These 2DLMs represent a new class of nearly ideal 2D material systems for exploring fundamental chemistry and physics at the limit of single-atom thickness, and have the potential to open up totally new technological opportunities beyond the reach of existing materials. In general, there are a wide range of 2DLMs in which the atomic layers are weakly bonded together by van der Waals interactions and can be isolated into single or few-layer nanosheets. The van der Waals interactions between neighboring atomic layers could allow much more flexible integration of distinct materials to nearly arbitrarily combine and control different properties at the atomic scale. The transition metal dichalcogenides (TMDs) (e.g., MoS2, WSe2) represent a large family of layered materials, many of which exhibit tunable band gaps that can undergo a transition from an indirect band gap in bulk crystals to a direct band gap in monolayer nanosheets. These 2D-TMDs have thus emerged as an exciting class of atomically thin semiconductors for a new generation of electronic and optoelectronic devices. Recent studies have shown exciting potential of these atomically thin semiconductors, including the demonstration of atomically thin transistors, a new design of vertical transistors, as well as new types of optoelectronic devices such as tunable photovoltaic devices and light emitting devices. In parallel, there have also been considerable efforts in developing diverse synthetic approaches for the rational growth of various forms of 2D materials with precisely controlled chemical composition, physical dimension, and heterostructure interface. Here we review the recent efforts, progress, opportunities and challenges in exploring the layered TMDs as a new class of atomically thin semiconductors.

  11. The properties of metal contacts on TiO2 thin films produced by reactive magnetron sputtering

    Directory of Open Access Journals (Sweden)

    Brus V. V.

    2010-10-01

    Full Text Available The article deals with research on volt-ampere characteristics of metal contacts (Al, Cr, In, Mo, Ti on titanium dioxide thin films and influence of annealing in vacuum on their electric properties. Volt-ampere characteristics measurements were taken by three-probe method. There was established that indium contact on TiO2 thin films possessed sharply defined ohmic properties.

  12. A top-down approach for fabricating three-dimensional closed hollow nanostructures with permeable thin metal walls.

    Science.gov (United States)

    Barrios, Carlos Angulo; Canalejas-Tejero, Víctor

    2017-01-01

    We report on a top-down method for the controlled fabrication of three-dimensional (3D), closed, thin-shelled, hollow nanostructures (nanocages) on planar supports. The presented approach is based on conventional microelectronic fabrication processes and exploits the permeability of thin metal films to hollow-out polymer-filled metal nanocages through an oxygen-plasma process. The technique is used for fabricating arrays of cylindrical nanocages made of thin Al shells on silicon substrates. This hollow metal configuration features optical resonance as revealed by spectral reflectance measurements and numerical simulations. The fabricated nanocages were demonstrated as a refractometric sensor with a measured bulk sensitivity of 327 nm/refractive index unit (RIU). The pattern design flexibility and controllability offered by top-down nanofabrication techniques opens the door to the possibility of massive integration of these hollow 3D nano-objects on a chip for applications such as nanocontainers, nanoreactors, nanofluidics, nano-biosensors and photonic devices.

  13. Genotoxicity of 11 heavy metals detected as food contaminants in two human cell lines.

    Science.gov (United States)

    Kopp, B; Zalko, D; Audebert, M

    2018-04-01

    Heavy metals, such as arsenic (As), antimony (Sb), barium (Ba), cadmium (Cd), cobalt (Co), germanium (Ge), lead (Pb), nickel (Ni), tellurium (Te), and vanadium (V) are widely distributed in the environment and in the food chain. Human exposure to heavy metals through water and food has been reported by different international agencies. Although some of these heavy metals are essential elements for human growth and development, they may also be toxic at low concentrations due to indirect mechanisms. In this study, the genotoxic and cytotoxic properties of 15 different oxidation statuses of 11 different heavy metals were investigated using high-throughput screening (γH2AX assay) in two human cell lines (HepG2 and LS-174T) representative of target organs (liver and colon) for food contaminants. Base on their lowest observed adverse effect concentration, the genotoxic potency of each heavy metal in each cell line was ranked in decreasing order, NaAsO 2  > CdCl 2  > PbCl 2 (only in LS-174T cells) > As 2 O 5  > SbCl 3  > K 2 TeO 3  > As 2 O 3 . No significant genotoxicity was observed with the other heavy metals tested. Cell viability data indicate that several heavy metals (As, Cd, Co, Ni, Sb, and Te) induce cytotoxicity at high concentrations, whereas an increase in the number of cells was observed for lead concentrations >100 µM in both cell lines tested, suggesting that lead stimulates cell growth. All these results highlight the possible human health hazards associated with the presence of heavy metals present in food. Environ. Mol. Mutagen. 59:202-210, 2018. © 2017 Wiley Periodicals, Inc. © 2017 Wiley Periodicals, Inc.

  14. Optimization of synthesis protocols to control the nanostructure and the morphology of metal oxide thin films for memristive applications

    Energy Technology Data Exchange (ETDEWEB)

    Baldi, G., E-mail: giacomo.baldi@cnr.it; Bosi, M.; Attolini, G.; Berzina, T.; Mosca, R.; Ponraj, J. S.; Iannotta, S. [IMEM-CNR Institute, Parco Area delle Scienze 37/A, I-43124 Parma (Italy); Giusti, G.; Nozar, P.; Toccoli, T.; Verucchi, R. [IMEM-CNR Institute, Via alla Cascata 56/C, Povo – I-38123 Trento (Italy); Collini, C.; Lorenzelli, L. [FBK Bruno Kessler Foundation, Via Sommarive 18, I-38123 Trento (Italy)

    2015-03-10

    We propose a multi-technique approach based on in-vacuum synthesis of metal oxides to optimize the memristive properties of devices that use a metal oxide thin film as insulating layer. Pulsed Microplasma Cluster Source (PMCS) is based on supersonic beams seeded by clusters of the metal oxide. Nanocrystalline TiO{sub 2} thin films can be grown at room temperature, controlling the oxide stoichiometry from titanium metal up to a significant oxygen excess. Pulsed Electron beam Deposition (PED) is suitable to grow crystalline thin films on large areas, a step towards producing device arrays with controlled morphology and stoichiometry. Atomic Layer Deposition (ALD) is a powerful technique to grow materials layer-by-layer, finely controlling the chemical and structural properties of the film up to thickness of 50-80 nm. We will present a few examples of metal-insulator-metal structures showing a pinched hysteresis loop in their current-voltage characteristic. The structure, stoichiometry and morphology of the metal oxide layer, either aluminum oxide or titanium dioxide, is investigated by means of scanning electron microscopy (SEM) and by Raman scattering.

  15. Revealing the relationships between chemistry, topology and stiffness of ultrastrong Co-based metallic glass thin films: A combinatorial approach

    International Nuclear Information System (INIS)

    Schnabel, Volker; Köhler, Mathias; Evertz, Simon; Gamcova, Jana; Bednarcik, Jozef; Music, Denis; Raabe, Dierk; Schneider, Jochen M.

    2016-01-01

    An efficient way to study the relationship between chemical composition and mechanical properties of thin films is to utilize the combinatorial approach, where spatially resolved mechanical property measurements are conducted along a concentration gradient. However, for thin film glasses many properties including the mechanical response are affected by chemical topology. Here a novel method is introduced which enables spatially resolved short range order analysis along concentration gradients of combinatorially synthesized metallic glass thin films. For this purpose a CoZrTaB metallic glass film of 3 μm thickness is deposited on a polyimide foil, which is investigated by high energy X-ray diffraction in transmission mode. Through the correlative chemistry-topology-stiffness investigation, we observe that an increase in metalloid concentration from 26.4 to 32.7 at% and the associated formation of localized (hybridized) metal – metalloid bonds induce a 10% increase in stiffness. Concomitantly, along the same composition gradient, a metalloid-concentration-induced increase in first order metal - metal bond distances of 1% is observed, which infers itinerant (metallic) bond weakening. Hence, the metalloid concentration induced increase in hybridized bonding dominates the corresponding weakening of metallic bonds.

  16. CHEMICAL COMPOSITIONS OF THIN-DISK, HIGH-METALLICITY RED HORIZONTAL-BRANCH FIELD STARS

    International Nuclear Information System (INIS)

    Afşar, M.; Sneden, C.; For, B.-Q.

    2012-01-01

    We present a detailed abundance analysis and atmospheric parameters of 76 stars from a survey to identify field Galactic red horizontal-branch (RHB) stars. High-resolution echelle spectra (R ≅ 60,000, S/N ≥ 100) were obtained with the 2.7 m Harlan J. Smith Telescope at McDonald Observatory. The target stars were selected only by color and parallax information. Overall metallicities and relative abundances of proton-capture elements (C, N, O, Li), α-elements (Ca and Si), and neutron-capture elements (Eu and La) were determined by either equivalent width or synthetic spectrum analyses. We used CN features at the λλ7995-8040 region in order to determine the 12 C/ 13 C ratios of our targets. Investigation of the evolutionary stages, using spectroscopic T eff and log g values along with derived 12 C/ 13 C ratios, revealed the presence of 18 probable RHB stars in our sample. We also derived kinematics of the stars with available distance information. Taking into account both the kinematics and probable evolutionary stages, we conclude that our sample contains 5 thick-disk and 13 thin-disk RHB stars. Up until now, RHB stars have been considered as members of the thick disk, and were expected to have large space velocities and sub-solar metallicities. However, our sample is dominated by low-velocity solar-metallicity RHB stars; their existence cannot be easily explained with standard stellar evolution.

  17. Directed Self-Assembly of Diblock Copolymer Thin Films on Prepatterned Metal Nanoarrays.

    Science.gov (United States)

    Chang, Tongxin; Huang, Haiying; He, Tianbai

    2016-01-01

    The sequential layer by layer self-assembly of block copolymer (BCP) nanopatterns is an effective approach to construct 3D nanostructures. Here large-scale highly ordered metal nano-arrays prepared from solvent annealed thin films of polystyrene-block-poly(2-vinylpyridine) (PS-b-P2VP) diblock copolymer are used to direct the assembly of the same BCP. The influence of initial loading concentration of metal precursor, the type of metal nanoparticle (gold, platinum, and silver), and the nanoparticle-substrate interaction on the directed assembly behavior of the upper BCP layer have been focused. It is found that the upper BCP film can be completely directed by the gold nanoarray with P2VP domain exclusively located between two adjacent gold nanowires or nanodots, which behaves the same way as on the platinum nanoarray. While the silver nanoarray can be destroyed during the upper BCP self-assembly with the silver nanoparticles assembled into the P2VP domain. Based on the discussions of the surface energy of nanoparticles and the interplay between nanoparticle-substrate interaction and nanoparticle-polymer interaction, it is concluded that the effect of immobilization of nanoparticles on the substrate, together with entropy effect to minimize the energetically unfavorable chain stretching contributes to the most effective alignment between each layer. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  18. Cortical surface registration using spherical thin-plate spline with sulcal lines and mean curvature as features.

    Science.gov (United States)

    Park, Hyunjin; Park, Jun-Sung; Seong, Joon-Kyung; Na, Duk L; Lee, Jong-Min

    2012-04-30

    Analysis of cortical patterns requires accurate cortical surface registration. Many researchers map the cortical surface onto a unit sphere and perform registration of two images defined on the unit sphere. Here we have developed a novel registration framework for the cortical surface based on spherical thin-plate splines. Small-scale composition of spherical thin-plate splines was used as the geometric interpolant to avoid folding in the geometric transform. Using an automatic algorithm based on anisotropic skeletons, we extracted seven sulcal lines, which we then incorporated as landmark information. Mean curvature was chosen as an additional feature for matching between spherical maps. We employed a two-term cost function to encourage matching of both sulcal lines and the mean curvature between the spherical maps. Application of our registration framework to fifty pairwise registrations of T1-weighted MRI scans resulted in improved registration accuracy, which was computed from sulcal lines. Our registration approach was tested as an additional procedure to improve an existing surface registration algorithm. Our registration framework maintained an accurate registration over the sulcal lines while significantly increasing the cross-correlation of mean curvature between the spherical maps being registered. Copyright © 2012 Elsevier B.V. All rights reserved.

  19. Lens of controllable optical field with thin film metallic glasses for UV-LEDs.

    Science.gov (United States)

    Pan, C T; Chen, Y C; Lin, Po-Hung; Hsieh, C C; Hsu, F T; Lin, Po-Hsun; Chang, C M; Hsu, J H; Huang, J C

    2014-06-16

    In the exposure process of photolithography, a free-form lens is designed and fabricated for UV-LED (Ultraviolet Light-Emitting Diode). Thin film metallic glasses (TFMG) are adopted as UV reflection layers to enhance the irradiance and uniformity. The Polydimethylsiloxane (PDMS) with high transmittance is used as the lens material. The 3-D fast printing is attempted to make the mold of the lens. The results show that the average irradiance can be enhanced by 6.5~6.7%, and high uniformity of 85~86% can be obtained. Exposure on commercial thick photoresist using this UV-LED system shows 3~5% dimensional deviation, lower than the 6~8% deviation for commercial mercury lamp system. This current system shows promising potential to replace the conventional mercury exposure systems.

  20. Investigation of size-temperature effects in thin f;.lms of transition metals

    International Nuclear Information System (INIS)

    Loboda, V.B.; Protsenko, I.E.; Smolin, M.D.; Yaremenko, A.V.

    1985-01-01

    The temperature and size dependences are studied for specific rho and temperature coeficients of resistance of transition metal films obtained and annealed in the 10 -6 - 5x10 -7 Pa vacuum. The size dependence of lambda sub(g)(1-p), rho sub(db), R, r and rhosub(db)sup(v) parameters was calculated using the Tellier, Tosser and Pichard theory. The temperature dependence of the conductivity was investigated in the 80-700 K range. A conclusion is made that all differences between dependences rho(T) for thin and bulk samples may be explained by effects specific for films but presenting no class of new physical effects. The size dependence of the electron-phonon interaction near T>THETAsub(D) and proportionality factors in the approximating equation rho approximately Asub(1.2)xTsup(2) is obtained for Ni films

  1. Influence of metal induced crystallization parameters on the performance of polycrystalline silicon thin film transistors

    International Nuclear Information System (INIS)

    Pereira, L.; Barquinha, P.; Fortunato, E.; Martins, R.

    2005-01-01

    In this work, metal induced crystallization using nickel was employed to obtain polycrystalline silicon by crystallization of amorphous films for thin film transistor applications. The devices were produced through only one lithographic process with a bottom gate configuration using a new gate dielectric consisting of a multi-layer of aluminum oxide/titanium oxide produced by atomic layer deposition. The best results were obtained for TFTs with the active layer of poly-Si crystallized for 20 h at 500 deg. C using a nickel layer of 0.5 nm where the effective mobility is 45.5 cm 2 V -1 s -1 . The threshold voltage, the on/off current ratio and the sub-threshold voltage are, respectively, 11.9 V, 5.55x10 4 and 2.49 V/dec

  2. Liquid- and Gas-Phase Diffusion of Ferrocene in Thin Films of Metal-Organic Frameworks

    Directory of Open Access Journals (Sweden)

    Wencai Zhou

    2015-06-01

    Full Text Available The mass transfer of the guest molecules in nanoporous host materials, in particular in metal-organic frameworks (MOFs, is among the crucial features of their applications. By using thin surface-mounted MOF films in combination with a quartz crystal microbalance (QCM, the diffusion of ferrocene vapor and of ethanolic and hexanic ferrocene solution in HKUST-1 was investigated. For the first time, liquid- and gas-phase diffusion in MOFs was compared directly in the identical sample. The diffusion coefficients are in the same order of magnitude (~10−16 m2·s−1, whereas the diffusion coefficient of ferrocene in the empty framework is roughly 3-times smaller than in the MOF which is filled with ethanol or n-hexane.

  3. Liquid- and Gas-Phase Diffusion of Ferrocene in Thin Films of Metal-Organic Frameworks

    Science.gov (United States)

    Zhou, Wencai; Wöll, Christof; Heinke, Lars

    2015-01-01

    The mass transfer of the guest molecules in nanoporous host materials, in particular in metal-organic frameworks (MOFs), is among the crucial features of their applications. By using thin surface-mounted MOF films in combination with a quartz crystal microbalance (QCM), the diffusion of ferrocene vapor and of ethanolic and hexanic ferrocene solution in HKUST-1 was investigated. For the first time, liquid- and gas-phase diffusion in MOFs was compared directly in the identical sample. The diffusion coefficients are in the same order of magnitude (~10−16 m2·s−1), whereas the diffusion coefficient of ferrocene in the empty framework is roughly 3-times smaller than in the MOF which is filled with ethanol or n-hexane.

  4. Hanle Magnetoresistance in Thin Metal Films with Strong Spin-Orbit Coupling.

    Science.gov (United States)

    Vélez, Saül; Golovach, Vitaly N; Bedoya-Pinto, Amilcar; Isasa, Miren; Sagasta, Edurne; Abadia, Mikel; Rogero, Celia; Hueso, Luis E; Bergeret, F Sebastian; Casanova, Fèlix

    2016-01-08

    We report measurements of a new type of magnetoresistance in Pt and Ta thin films. The spin accumulation created at the surfaces of the film by the spin Hall effect decreases in a magnetic field because of the Hanle effect, resulting in an increase of the electrical resistance as predicted by Dyakonov [Phys. Rev. Lett. 99, 126601 (2007)]. The angular dependence of this magnetoresistance resembles the recently discovered spin Hall magnetoresistance in Pt/Y(3)Fe(5)O(12) bilayers, although the presence of a ferromagnetic insulator is not required. We show that this Hanle magnetoresistance is an alternative simple way to quantitatively study the coupling between charge and spin currents in metals with strong spin-orbit coupling.

  5. Cu-based metal-organic framework thin films: A morphological and photovoltaic study

    Science.gov (United States)

    Khajavian, Ruhollah; Ghani, Kamal

    2018-06-01

    This work explores the layer-by-layer (LbL) fabrication of [Cu2(bdc)2(bpy)]n thin films by using pyridine and acetic acid as capping agents onto mesoporous titania surface. While in the presence of acetic acid highly-ordered crystals with nanoplate morphology are formed, modulation with pyridine gives rise to formation of leaf-like crystals. In addition, processing sequence also matters when modulator is added. According to our results, modulators should be added to metal solution rather than linker/pillar during LbL assembly. These films were subsequently shown to generate photocurrent in a sandwich-type Grätzel solar cell device in response to simulated 1 sun illumination. The results also demonstrated that the device consisted of well-aligned nanoplates exhibits higher power conversion efficiency than the similar cell with disordered leaf-like crystals after iodine loading.

  6. Surface Plasmon Enhanced Light Trapping in Metal/Silicon Nanobowl Arrays for Thin Film Photovoltaics

    Directory of Open Access Journals (Sweden)

    Ruinan Sun

    2017-01-01

    Full Text Available Enhancing the light absorption in thin film silicon solar cells with nanophotonic and plasmonic structures is important for the realization of high efficiency solar cells with significant cost reduction. In this work, we investigate periodic arrays of conformal metal/silicon nanobowl arrays (MSNBs for light trapping applications in silicon solar cells. They exhibited excellent light-harvesting ability across a wide range of wavelengths up to infrared regimes. The optimized structure (MSNBsH covered by SiO2 passivation layer and hemisphere Ag back reflection layer has a maximal short-circuit density (Jsc 25.5 mA/cm2, which is about 88.8% higher than flat structure counterpart, and the light-conversion efficiency (η is increased two times from 6.3% to 12.6%. The double-side textures offer a promising approach to high efficiency ultrathin silicon solar cells.

  7. Synthesis of Thin Film Composite Metal-Organic Frameworks Membranes on Polymer Supports

    KAUST Repository

    Barankova, Eva

    2017-06-01

    Since the discovery of size-selective metal-organic frameworks (MOF) researchers have tried to manufacture them into gas separation membranes. ZIF-8 became the most studied MOF for membrane applications mainly because of its simple synthesis, good chemical and thermal stability, recent commercial availability and attractive pore size. The aim of this work is to develop convenient methods for growing ZIF thin layers on polymer supports to obtain defect-free ZIF membranes with good gas separation properties. We present new approaches for ZIF membranes preparation on polymers. We introduce zinc oxide nanoparticles in the support as a secondary metal source for ZIF-8 growth. Initially the ZnO particles were incorporated into the polymer matrix and later on the surface of the polymer by magnetron sputtering. In both cases, the ZnO facilitated to create more nucleation opportunities and improved the ZIF-8 growth compared to the synthesis without using ZnO. By employing the secondary seeded growth method, we were able to obtain thin (900 nm) ZIF-8 layer with good gas separation performance. Next, we propose a metal-chelating polymer as a suitable support for growing ZIF layers. Defect-free ZIF-8 films with a thickness of 600 nm could be obtained by a contra-diffusion method. ZIF-8 membranes were tested for permeation of hydrogen and hydrocarbons, and one of the highest selectivities reported so far for hydrogen/propane, and propylene/propane was obtained. Another promising method to facilitate the growth of MOFs on polymeric supports is the chemical functionalization of the support surface with functional groups, which can complex metal ions and which can covalently bond the MOF crystals. We functionalized the surface of a common porous polymeric membrane with amine groups, which took part in the reaction to form ZIF-8 nanocrystals. We observed an enhancement in adhesion between the ZIF layer and the support. The effect of parameters of the contra-diffusion experiment

  8. Resistivity scaling due to electron surface scattering in thin metal layers

    Science.gov (United States)

    Zhou, Tianji; Gall, Daniel

    2018-04-01

    The effect of electron surface scattering on the thickness-dependent electrical resistivity ρ of thin metal layers is investigated using nonequilibrium Green's function density functional transport simulations. Cu(001) thin films with thickness d =1 -2 nm are used as a model system, employing a random one-monolayer-high surface roughness and frozen phonons to cause surface and bulk scattering, respectively. The zero-temperature resistivity increases from 9.7 ±1.0 μ Ω cm at d =1.99 nm to 18.7 ±2.6 μ Ω cm at d =0.9 0 nm, contradicting the asymptotic T =0 prediction from the classical Fuchs-Sondheimer model. At T =9 00 K, ρ =5.8 ±0.1 μ Ω cm for bulk Cu and ρ =13.4 ±1.1 and 22.5 ±2.4 μ Ω cm for layers with d =1.99 and 0.90 nm, respectively, indicating an approximately additive phonon contribution which, however, is smaller than for bulk Cu or atomically smooth layers. The overall data indicate that the resistivity contribution from surface scattering is temperature-independent and proportional to 1 /d , suggesting that it can be described using a surface-scattering mean-free path λs for 2D transport which is channel-independent and proportional to d . Data fitting indicates λs=4 ×d for the particular simulated Cu(001) surfaces with a one-monolayer-high surface roughness. The 1 /d dependence deviates considerably from previous 1 /d2 predictions from quantum models, indicating that the small-roughness approximation in these models is not applicable to very thin (<2 nm) layers, where the surface roughness is a considerable fraction of d .

  9. Research on Liquid Forming Process of Nickel Superalloys Thin Sheet Metals

    Directory of Open Access Journals (Sweden)

    Hyrcza-Michalska M.

    2017-12-01

    Full Text Available The paper presents the study of drawability of thin sheet metals made of a nickel superalloy Inconel type. The manufacturing process of axisymmetric cup – cone and a closed section profile in the form of a circular tube were designed and analyzed. In both cases, working fluid-oil was used in place of the rigid tools. The process of forming liquid is currently the only alternative method for obtaining complex shapes, coatings, and especially if we do it with high-strength materials. In the case of nickel superalloys the search for efficient methods to manufacture of the shaped shell is one of the most considerable problems in aircraft industry [1-5]. However, the automotive industries have the same problem with so-called advanced high-strength steels (AHSS. Due to this, both industrial problems have been examined and the emphasis have been put on the process of liquid forming (hydroforming. The study includes physical tests and the corresponding numerical simulations performed, using the software Eta/Dynaform 5.9. Numerical analysis of the qualitative and quantitative forecasting enables the formability of materials with complex and unusual characteristics of the mechanical properties and forming technology. It has been found that only the computer aided design based on physical and numerical modeling, makes efficient plastic processing possible using a method of hydroforming. Drawability evaluation based on the determination of the mechanical properties of complex characteristics is an indispensable element of this design in the best practice of industrial manufacturing products made of thin sheet metals.

  10. EPMA-EDS surface measurements of interdiffusion coefficients between miscible metals in thin films

    International Nuclear Information System (INIS)

    Christien, F.; Pierson, J.F.; Hassini, A.; Capon, F.; Le Gall, R.; Brousse, T.

    2010-01-01

    A new technique is developed to study interdiffusion between two miscible metals. The technique is applied to the Ni-Pd system. It consists in measuring the change of apparent surface composition of a Pd substrate coated with an 800 nm Ni thin film during annealing at a given temperature. The measurement is carried out in-situ inside the chamber of a SEM (scanning electron microscope) by EPMA-EDS (electron probe microanalysis-energy dispersive X-ray spectroscopy). The experimental data are processed using a model that mixes the Fick's diffusion equations and the electron probe microanalysis equation. This process allows the determination of the mean interdiffusion coefficient at a given annealing temperature. The main advantages of the technique are the possible determination of interdiffusion coefficients in thin films and at very low temperature (down to 430 deg. C, i.e. ∼0.4 T m ), which is not achievable with other techniques conventionally used for the study of interdiffusion. The Ni-Pd mean interdiffusion coefficient is shown to follow an Arrhenius law (D-tilde c =6.32x10 -3 exp((178.8kJmol -1 )/(RT) )cm 2 s -1 ) between 430 deg. C and 900 deg. C, in relatively good agreement with previous interdiffusion measurements made on the Ni-Pd system at higher temperature.

  11. Reliability of vibration energy harvesters of metal-based PZT thin films

    Science.gov (United States)

    Tsujiura, Y.; Suwa, E.; Kurokawa, F.; Hida, H.; Kanno, I.

    2014-11-01

    This paper describes the reliability of piezoelectric vibration energy harvesters (PVEHs) of Pb(Zr,Ti)O3 (PZT) thin films on metal foil cantilevers. The PZT thin films were directly deposited onto the Pt-coated stainless-steel (SS430) cantilevers by rf-magnetron sputtering, and we observed their aging behavior of power generation characteristics under the resonance vibration condition for three days. During the aging measurement, there was neither fatigue failure nor degradation of dielectric properties in our PVEHs (length: 13 mm, width: 5.0 mm, thickness: 104 μm) even under a large excitation acceleration of 25 m/s2. However, we observed clear degradation of the generated electric voltage depending on excitation acceleration. The decay rate of the output voltage was 5% from the start of the measurement at 25 m/s2. The transverse piezoelectric coefficient (e31,f) also degraded with almost the same decay rate as that of the output voltage; this indicates that the degradation of output voltage was mainly caused by that of piezoelectric properties. From the decay curves, the output powers are estimated to degrade 7% at 15 m/s2 and 36% at 25 m/s2 if we continue to excite the PVEHs for 30 years.

  12. Reliability of vibration energy harvesters of metal-based PZT thin films

    International Nuclear Information System (INIS)

    Tsujiura, Y; Suwa, E; Kurokawa, F; Hida, H; Kanno, I

    2014-01-01

    This paper describes the reliability of piezoelectric vibration energy harvesters (PVEHs) of Pb(Zr,Ti)O 3 (PZT) thin films on metal foil cantilevers. The PZT thin films were directly deposited onto the Pt-coated stainless-steel (SS430) cantilevers by rf-magnetron sputtering, and we observed their aging behavior of power generation characteristics under the resonance vibration condition for three days. During the aging measurement, there was neither fatigue failure nor degradation of dielectric properties in our PVEHs (length: 13 mm, width: 5.0 mm, thickness: 104 μm) even under a large excitation acceleration of 25 m/s 2 . However, we observed clear degradation of the generated electric voltage depending on excitation acceleration. The decay rate of the output voltage was 5% from the start of the measurement at 25 m/s 2 . The transverse piezoelectric coefficient (e 31,f ) also degraded with almost the same decay rate as that of the output voltage; this indicates that the degradation of output voltage was mainly caused by that of piezoelectric properties. From the decay curves, the output powers are estimated to degrade 7% at 15 m/s 2 and 36% at 25 m/s 2 if we continue to excite the PVEHs for 30 years

  13. Topotactic Metal-Insulator Transition in Epitaxial SrFeOx Thin Films.

    Science.gov (United States)

    Khare, Amit; Shin, Dongwon; Yoo, Tae Sup; Kim, Minu; Kang, Tae Dong; Lee, Jaekwang; Roh, Seulki; Jung, In-Ho; Hwang, Jungseek; Kim, Sung Wng; Noh, Tae Won; Ohta, Hiromichi; Choi, Woo Seok

    2017-10-01

    Topotactic phase transformation enables structural transition without losing the crystalline symmetry of the parental phase and provides an effective platform for elucidating the redox reaction and oxygen diffusion within transition metal oxides. In addition, it enables tuning of the emergent physical properties of complex oxides, through strong interaction between the lattice and electronic degrees of freedom. In this communication, the electronic structure evolution of SrFeO x epitaxial thin films is identified in real-time, during the progress of reversible topotactic phase transformation. Using real-time optical spectroscopy, the phase transition between the two structurally distinct phases (i.e., brownmillerite and perovskite) is quantitatively monitored, and a pressure-temperature phase diagram of the topotactic transformation is constructed for the first time. The transformation at relatively low temperatures is attributed to a markedly small difference in Gibbs free energy compared to the known similar class of materials to date. This study highlights the phase stability and reversibility of SrFeO x thin films, which is highly relevant for energy and environmental applications exploiting the redox reactions. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  14. Electromagnetic interference produced by power or electrified railway lines on metallic pipe networks

    International Nuclear Information System (INIS)

    Lucca, G.

    1999-01-01

    The paper presents an algorithm for the calculation, in the frequency domain, of the induced voltages and currents on a generic metallic pipe network exposed to the electromagnetic interference from a power line or an electrified railway line. By assuming as known the voltages and the currents on the inducing line, the algorithm may be subdivided into the following main steps: a) determination of the ideal electromotive force and current generators to be applied to the induced structure in order to represent the electromagnetic influence from the inducing line; b) modelling of the pipe network by means of a suitable equivalent electric network; c) calculation of voltages and currents on the induced network [it

  15. Thin-Film Photovoltaic Cells: Long-Term Metal(loid) Leaching at Their End-of-Life

    NARCIS (Netherlands)

    Zimmermann, Y.S.; Schäffer, A.; Corvini, P.F.X.; Lenz, M.

    2013-01-01

    The photovoltaic effect of thin-film copper indium gallium selenide cells (CIGS) is conferred by the latter elements. Organic photovoltaic cells (OPV), relying on organic light-absorbing molecules, also contain a variety of metals (e.g., Zn, Al, In, Sn, Ag). The environmental impact of such

  16. Electrical conductivity dependence of thin metallic films of Au and Pd as a top electrode in capacitor applications

    International Nuclear Information System (INIS)

    Nazarpour, S.; Langenberg, E.; Jambois, O.; Ferrater, C.; Garcia-Cuenca, M.V.; Polo, M.C.; Varela, M.

    2009-01-01

    Electrical conductivity dependence of thin metallic films of Au and Pd over the different perovskites was investigated. It is found from electrical properties that crystallographic growth orientation of Au and Pd thin layers attained from X-ray diffraction results indicate the slop of current (I)-voltage (V) plots. Besides, surface morphology and topography was considered using Field Emission Scanning Electron Microscopy and Atomic Force Microscopy, respectively. Obtained results showed the Stranski-Krastanov growth of the Pd and Au. Indeed, diminishing of the root-mean-square roughness of Pd/BiMnO 3 /SrTiO 3 following by Au deposition should be concerned due to growth of Au onto the crack-like parts of the substrate. These crack-like parts appeared due to parasitic phases of the Bi-Mn-O system mainly Mn 3 O 4 (l 0 l) and Mn 3 O 4 (0 0 4 l). The different response in the electrical properties of heterostructures suggests that electrical conductance of the Au and Pd thin metallic films have the crystallographic orientation dependence. Furthermore, polycrystallinity of the thin metallic films are desired in electrode applications due to increase the conductivity of the metallic layers.

  17. All-metallic electrically gated 2H-TaSe2 thin-film switches and logic circuits

    International Nuclear Information System (INIS)

    Renteria, J.; Jiang, C.; Yan, Z.; Samnakay, R.; Goli, P.; Pope, T. R.; Salguero, T. T.; Wickramaratne, D.; Lake, R. K.; Khitun, A. G.; Balandin, A. A.

    2014-01-01

    We report the fabrication and performance of all-metallic three-terminal devices with tantalum diselenide thin-film conducting channels. For this proof-of-concept demonstration, the layers of 2H-TaSe 2 were exfoliated mechanically from single crystals grown by the chemical vapor transport method. Devices with nanometer-scale thicknesses exhibit strongly non-linear current-voltage characteristics, unusual optical response, and electrical gating at room temperature. We have found that the drain-source current in thin-film 2H-TaSe 2 –Ti/Au devices reproducibly shows an abrupt transition from a highly resistive to a conductive state, with the threshold tunable via the gate voltage. Such current-voltage characteristics can be used, in principle, for implementing radiation-hard all-metallic logic circuits. These results may open new application space for thin films of van der Waals materials

  18. All-metallic electrically gated 2H-TaSe2 thin-film switches and logic circuits

    Science.gov (United States)

    Renteria, J.; Samnakay, R.; Jiang, C.; Pope, T. R.; Goli, P.; Yan, Z.; Wickramaratne, D.; Salguero, T. T.; Khitun, A. G.; Lake, R. K.; Balandin, A. A.

    2014-01-01

    We report the fabrication and performance of all-metallic three-terminal devices with tantalum diselenide thin-film conducting channels. For this proof-of-concept demonstration, the layers of 2H-TaSe2 were exfoliated mechanically from single crystals grown by the chemical vapor transport method. Devices with nanometer-scale thicknesses exhibit strongly non-linear current-voltage characteristics, unusual optical response, and electrical gating at room temperature. We have found that the drain-source current in thin-film 2H-TaSe2-Ti/Au devices reproducibly shows an abrupt transition from a highly resistive to a conductive state, with the threshold tunable via the gate voltage. Such current-voltage characteristics can be used, in principle, for implementing radiation-hard all-metallic logic circuits. These results may open new application space for thin films of van der Waals materials.

  19. All-metallic electrically gated 2H-TaSe{sub 2} thin-film switches and logic circuits

    Energy Technology Data Exchange (ETDEWEB)

    Renteria, J.; Jiang, C.; Yan, Z. [Nano-Device Laboratory, Department of Electrical Engineering, Bourns College of Engineering, University of California–Riverside, Riverside, California 92521 (United States); Samnakay, R.; Goli, P. [Materials Science and Engineering Program, Bourns College of Engineering, University of California–Riverside, Riverside, California 92521 (United States); Pope, T. R.; Salguero, T. T. [Department of Chemistry, University of Georgia, Athens, Georgia 30602 (United States); Wickramaratne, D.; Lake, R. K. [Laboratory for Terascale and Terahertz Electronics, Department of Electrical Engineering, Bourns College of Engineering, University of California–Riverside, Riverside, California 92521 (United States); Khitun, A. G. [Nano-Device Laboratory, Department of Electrical Engineering, Bourns College of Engineering, University of California–Riverside, Riverside, California 92521 (United States); Materials Science and Engineering Program, Bourns College of Engineering, University of California–Riverside, Riverside, California 92521 (United States); Balandin, A. A., E-mail: balandin@ee.ucr.edu [Nano-Device Laboratory, Department of Electrical Engineering, Bourns College of Engineering, University of California–Riverside, Riverside, California 92521 (United States); Department of Chemistry, University of Georgia, Athens, Georgia 30602 (United States)

    2014-01-21

    We report the fabrication and performance of all-metallic three-terminal devices with tantalum diselenide thin-film conducting channels. For this proof-of-concept demonstration, the layers of 2H-TaSe{sub 2} were exfoliated mechanically from single crystals grown by the chemical vapor transport method. Devices with nanometer-scale thicknesses exhibit strongly non-linear current-voltage characteristics, unusual optical response, and electrical gating at room temperature. We have found that the drain-source current in thin-film 2H-TaSe{sub 2}–Ti/Au devices reproducibly shows an abrupt transition from a highly resistive to a conductive state, with the threshold tunable via the gate voltage. Such current-voltage characteristics can be used, in principle, for implementing radiation-hard all-metallic logic circuits. These results may open new application space for thin films of van der Waals materials.

  20. Off-Line Testing of Tribo-Systems for Sheet Metal Forming Production

    DEFF Research Database (Denmark)

    Bay, Niels; Ceron, Ermanno

    2014-01-01

    Off-line testing of new tribo-systems for sheet metal forming production is an important issue, when new, environmentally benign lubricants are to be introduced. To obtain useful results it is, however, vital to ensure similar conditions as in the production process regarding the main tribo...... leading to very high tool/workpiece interface pressure and temperature in the second re-draw. Under such conditions only the best lubricant systems work satisfactory, and the paper shows how the performance of different tribo-systems in production may be predicted by off-line testing combined...

  1. Use of Monocrystalline Silicon as Tool Material for Highly Accurate Blanking of Thin Metal Foils

    International Nuclear Information System (INIS)

    Hildering, Sven; Engel, Ulf; Merklein, Marion

    2011-01-01

    The trend towards miniaturisation of metallic mass production components combined with increased component functionality is still unbroken. Manufacturing these components by forming and blanking offers economical and ecological advantages combined with the needed accuracy. The complexity of producing tools with geometries below 50 μm by conventional manufacturing methods becomes disproportional higher. Expensive serial finishing operations are required to achieve an adequate surface roughness combined with accurate geometry details. A novel approach for producing such tools is the use of advanced etching technologies for monocrystalline silicon that are well-established in the microsystems technology. High-precision vertical geometries with a width down to 5 μm are possible. The present study shows a novel concept using this potential for the blanking of thin copper foils with monocrystallline silicon as a tool material. A self-contained machine-tool with compact outer dimensions was designed to avoid tensile stresses in the brittle silicon punch by an accurate, careful alignment of the punch, die and metal foil. A microscopic analysis of the monocrystalline silicon punch shows appropriate properties regarding flank angle, edge geometry and surface quality for the blanking process. Using a monocrystalline silicon punch with a width of 70 μm blanking experiments on as-rolled copper foils with a thickness of 20 μm demonstrate the general applicability of this material for micro production processes.

  2. Study of 'liquid gold' coatings: Thermal decomposition and formation of metallic thin films

    International Nuclear Information System (INIS)

    Deram, V.; Turrell, S.; Darque-Ceretti, E.; Aucouturier, M.

    2006-01-01

    Organo-metallic solutions called liquid gold are largely used to obtain thin gilded films which are employed for decorative, technological and functional uses. However, these films often prove to be fragile with respect to use, resulting in loss of brilliance or even eventual film removal. An understanding of the behaviour of the layers requires good knowledge of the materials themselves. The present work was undertaken to better understand the evolution of the structural properties of liquid gold as it undergoes heat-processing. Accordingly, we followed the thermal decomposition processes of liquid gold coatings and the formation of the gilded metal layer using a combination of experimental techniques. First, thermal analyses coupled with mass spectrometry and infrared spectroscopy gave information concerning the decomposition of the organic medium. It has been found that the process of film formation can be decomposed into three steps, the second of which is an abrupt transition between 300 and 350 deg. C. Details on this transition have been obtained using real-time X-ray Diffraction and Rutherford Backscattering Spectrometry. Above 350 deg. C, the microstructure of the coating is reorganized to obtain a final layer which contains particles, of the size of a few hundreds nanometers, as shown by Transmission Electron Microscopy

  3. Nanocomposite metal amorphous-carbon thin films deposited by hybrid PVD and PECVD technique.

    Science.gov (United States)

    Teixeira, V; Soares, P; Martins, A J; Carneiro, J; Cerqueira, F

    2009-07-01

    Carbon based films can combine the properties of solid lubricating graphite structure and hard diamond crystal structure, i.e., high hardness, chemical inertness, high thermal conductivity and optical transparency without the crystalline structure of diamond. Issues of fundamental importance associated with nanocarbon coatings are reducing stress, improving adhesion and compatibility with substrates. In this work new nanocomposite coatings with improved toughness based in nanocrystalline phases of metals and ceramics embedded in amorphous carbon matrix are being developed within the frame of a research project: nc-MeNxCy/a-C(Me) with Me = Mo, Si, Al, Ti, etc. Carbide forming metal/carbon (Me/C) composite films with Me = Mo, W or Ti possess appropriate properties to overcome the limitation of pure DLC films. These novel coating architectures will be adopted with the objective to decrease residual stress, improve adherence and fracture toughness, obtain low friction coefficient and high wear-resistance. Nanocomposite DLC's films were deposited by hybrid technique using a PVD-Physically Vapor Deposition (magnetron sputtering) and Plasma Enhanced Chemical Vapor Deposition (PECVD), by the use of CH4 gas. The parameters varied were: deposition time, substrate temperature (180 degrees C) and dopant (Si + Mo) of the amorphous carbon matrix. All the depositions were made on silicon wafers and steel substrates precoated with a silicon inter-layer. The characterisation of the film's physico-mechanical properties will be presented in order to understand the influence of the deposition parameters and metal content used within the a-C matrix in the thin film properties. Film microstructure and film hybridization state was characterized by Raman Spectroscopy. In order to characterize morphology SEM and AFM will be used. Film composition was measured by Energy-Dispersive X-ray analysis (EDS) and by X-ray photoelectron spectroscopy (XPS). The contact angle for the produced DLC's on

  4. Metal-insulator transition in tin doped indium oxide (ITO thin films: Quantum correction to the electrical conductivity

    Directory of Open Access Journals (Sweden)

    Deepak Kumar Kaushik

    2017-01-01

    Full Text Available Tin doped indium oxide (ITO thin films are being used extensively as transparent conductors in several applications. In the present communication, we report the electrical transport in DC magnetron sputtered ITO thin films (prepared at 300 K and subsequently annealed at 673 K in vacuum for 60 minutes in low temperatures (25-300 K. The low temperature Hall effect and resistivity measurements reveal that the ITO thin films are moderately dis-ordered (kFl∼1; kF is the Fermi wave vector and l is the electron mean free path and degenerate semiconductors. The transport of charge carriers (electrons in these disordered ITO thin films takes place via the de-localized states. The disorder effects lead to the well-known ‘metal-insulator transition’ (MIT which is observed at 110 K in these ITO thin films. The MIT in ITO thin films is explained by the quantum correction to the conductivity (QCC; this approach is based on the inclusion of quantum-mechanical interference effects in Boltzmann’s expression of the conductivity of the disordered systems. The insulating behaviour observed in ITO thin films below the MIT temperature is attributed to the combined effect of the weak localization and the electron-electron interactions.

  5. Metal-insulator transition in tin doped indium oxide (ITO) thin films: Quantum correction to the electrical conductivity

    Science.gov (United States)

    Kaushik, Deepak Kumar; Kumar, K. Uday; Subrahmanyam, A.

    2017-01-01

    Tin doped indium oxide (ITO) thin films are being used extensively as transparent conductors in several applications. In the present communication, we report the electrical transport in DC magnetron sputtered ITO thin films (prepared at 300 K and subsequently annealed at 673 K in vacuum for 60 minutes) in low temperatures (25-300 K). The low temperature Hall effect and resistivity measurements reveal that the ITO thin films are moderately dis-ordered (kFl˜1; kF is the Fermi wave vector and l is the electron mean free path) and degenerate semiconductors. The transport of charge carriers (electrons) in these disordered ITO thin films takes place via the de-localized states. The disorder effects lead to the well-known `metal-insulator transition' (MIT) which is observed at 110 K in these ITO thin films. The MIT in ITO thin films is explained by the quantum correction to the conductivity (QCC); this approach is based on the inclusion of quantum-mechanical interference effects in Boltzmann's expression of the conductivity of the disordered systems. The insulating behaviour observed in ITO thin films below the MIT temperature is attributed to the combined effect of the weak localization and the electron-electron interactions.

  6. Off-line testing of multifunctional surfaces for metal forming applications

    DEFF Research Database (Denmark)

    Godi, A.; Grønbæk, J.; De Chiffre, L.

    2015-01-01

    In this paper, Bending-Under-Tension, an off-line test method simulating deep-drawing, is chosen for investigating the effectiveness of multifunctional (MUFU) surfaces in metal forming operations. Four different MUFU surfaces, characterized by a plateau bearing area and grooves for lubricant...... retention, are manufactured, together with two polished references. During the tests, surface texture is the only variable. The results show how MUFU surfaces perform better than the polished references, which produce severe galling, while MUFU surfaces with low bearing area display no clear evidence...... of galling. Metal-to-metal contact occurs anyway, but the strip material is pulverized and deposited onto the tool instead of cold-welding to it. The pockets create a discontinuity on the texture hindering pick-up propagation....

  7. Preliminary results from the Orbiting Solar Observatory 8 - Observations of optically thin lines

    Science.gov (United States)

    Shine, R. A.; Roussel-Dupre, D.; Bruner, E. C., Jr.; Chipman, E. G.; Lites, B. W.; Rottman, G. J.; Athay, R. G.; White, O. R.

    1976-01-01

    The University of Colorado spectrometer aboard OSO 8 has measured the high temperature C IV resonance lines (at 1548 and 1551 A) and the Si IV resonance lines (at 1393 and 1402 A) formed in the solar chromosphere-corona transition region. Preliminary results include studies of mean profiles, a comparison of cell and network profiles, and the behavior of the lines at the extreme solar limb.

  8. High mobility single-crystalline-like GaAs thin films on inexpensive flexible metal substrates by metal-organic chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Dutta, P., E-mail: pdutta2@central.uh.edu; Rathi, M.; Gao, Y.; Yao, Y.; Selvamanickam, V. [Department of Mechanical Engineering, University of Houston, Houston, Texas 77204 (United States); Zheng, N.; Ahrenkiel, P. [Department of Nanoscience and Nanoengineering, South Dakota School of Mines and Technology, Rapid City, South Dakota 57701 (United States); Martinez, J. [Materials Evaluation Laboratory, NASA Johnson Space Center, Houston, Texas 77085 (United States)

    2014-09-01

    We demonstrate heteroepitaxial growth of single-crystalline-like n and p-type doped GaAs thin films on inexpensive, flexible, and light-weight metal foils by metal-organic chemical vapor deposition. Single-crystalline-like Ge thin film on biaxially textured templates made by ion beam assisted deposition on metal foil served as the epitaxy enabling substrate for GaAs growth. The GaAs films exhibited strong (004) preferred orientation, sharp in-plane texture, low grain misorientation, strong photoluminescence, and a defect density of ∼10{sup 7 }cm{sup −2}. Furthermore, the GaAs films exhibited hole and electron mobilities as high as 66 and 300 cm{sup 2}/V-s, respectively. High mobility single-crystalline-like GaAs thin films on inexpensive metal substrates can pave the path for roll-to-roll manufacturing of flexible III-V solar cells for the mainstream photovoltaics market.

  9. Origin of the irreversibility line in thin YBa2Cu3O7-δ films with and without columnar defects

    International Nuclear Information System (INIS)

    Prozorov, R.; Konczykowski, M.; Schmidt, B.; Yeshurun, Y.; Shaulov, A.; Villard, C.; Koren, G.

    1996-01-01

    We report on measurements of the angular dependence of the irreversibility temperature T irr (θ) in YBa 2 Cu 3 O 7-δ thin films, defined by the onset of a third-harmonic signal and measured by a miniature Hall probe. From the functional form of T irr (θ) we conclude that the origin of the irreversibility line in unirradiated films is a dynamic crossover from an unpinned to a pinned vortex liquid. In irradiated films the irreversibility temperature is determined by the trapping angle. copyright 1996 The American Physical Society

  10. Characterization of interfaces between metals and organic thin films by electron and ion spectroscopies

    Energy Technology Data Exchange (ETDEWEB)

    Schmid, Martin

    2012-01-18

    In this thesis, interfaces between metals and organic thin films have been characterized with photoelectron and ion-scattering spectroscopies. Two different classes of metal/organic interfaces were examined in detail. First, interfaces which can be mainly characterized by relatively weak coordinative interactions between substrate and adsorbate. Second, interfaces which are mostly determined, or even created, by chemical reactions between different adsorbates or between adsorbates and substrate. Typical examples from the first class are metalated tetrapyrrole monolayers on Ag(111) and Au(111) single-crystal substrates. In this study, a focus was set to the interaction between iron and cobalt tetrapyrroles with Ag(111) or Au(111) substrates. A detailed examination of the corresponding photoelectron spectra revealed that the adsorbatesubstrate interaction is associated with a charge transfer from the metallic substrate to the Fe(II) or Co(II) ions within the tetrapyrrole units. The examination of cobalt(II) phthalocyanine monolayers further led to the conclusion that the magnetic moment, as present in unperturbed CoPc molecules, is efficiently quenched by the contact to the Ag(111) surface and the associated charge transfer. Similar investigations on Au(111) substrates gave evidence for possible adsorption site effects, further complicating the adsorbate/substrate interaction. Furthermore the formation of two-dimensional structures of poly(p-phenylene-terephthalamide) (PPTA, trademark Kevlar) on Ag(111) was closely examined. The Ag(111) surface does not only provide the geometrical boundary for the formation of the 2D covalent structures, but, moreover, actively participates in the reaction; after the adsorption of TPC molecules, a scission of the C-Cl bond, in particular at temperatures above 120 K, was evident. The resulting radical fragments appear stable and can act as reaction partners for the co-adsorbed PPD units. The chlorine atoms reside on the surface even

  11. Phenomenological understanding of dewetting and embedding of noble metal nanoparticles in thin films induced by ion irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Prakash, Jai, E-mail: jai.gupta1983@gmail.com [Department of Chemistry, MMH College (Ch. Charan Singh University Meerut), Ghaiziabad 201001 (India); Chemical Physics of Materials, Université Libre de Bruxelles, Campus de la Plaine, CP 243, B-1050 Bruxelles (Belgium); Tripathi, A. [Inter University Accelerator Centre, Aruna Asif Ali Marg, New Delhi 110067 (India); Gautam, Sanjeev; Chae, K.H.; Song, Jonghan [Advanced Analysis Center, Korea Institute of Science and Technology, Seoul 136–791 (Korea, Republic of); Rigato, V. [INFN Laboratori Nazionali di Legnaro, Via Romea. 4, 35020 Legnaro, Padova (Italy); Tripathi, Jalaj [Department of Chemistry, MMH College (Ch. Charan Singh University Meerut), Ghaiziabad 201001 (India); Asokan, K. [Inter University Accelerator Centre, Aruna Asif Ali Marg, New Delhi 110067 (India)

    2014-10-15

    The present experimental work provides the phenomenological approach to understand the dewetting in thin noble metal films with subsequent formation of nanoparticles (NPs) and embedding of NPs induced by ion irradiation. Au/polyethyleneterepthlate (PET) bilayers were irradiated with 150 keV Ar ions at varying fluences and were studied using scanning electron microscopy (SEM) and cross-sectional transmission electron microscopy (X-TEM). Thin Au film begins to dewet from the substrate after irradiation and subsequent irradiation results in spherical nanoparticles on the surface that at a fluence of 5 × 10{sup 16} ions/cm{sup 2} become embedded into the substrate. In addition to dewetting in thin films, synthesis and embedding of metal NPs by ion irradiation, the present article explores fundamental thermodynamic principles that govern these events systematically under the effect of irradiation. The results are explained on the basis of ion induced sputtering, thermal spike inducing local melting and of thermodynamic driving forces by minimization of the system free energy where contributions of surface and interfacial energies are considered with subsequent ion induced viscous flow in substrate. - Highlights: • Phenomenological interpretation of dewetting and embedding of metal NPs in thin film. • Exploring fundamental thermodynamic principles under influence of ion irradiation. • Ion induced surface/interface microstructural changes using SEM/X-TEM. • Ion induced sputtering, thermal spike induced local melting. • Thermodynamic driving forces relate to surface and interfacial energies.

  12. Equilibrium properties of simple metal thin films in the self-compressed stabilized jellium model.

    Science.gov (United States)

    Mahmoodi, T; Payami, M

    2009-07-01

    In this work, we have applied the self-compressed stabilized jellium model to predict the equilibrium properties of isolated thin Al, Na and Cs slabs. To make a direct correspondence to atomic slabs, we have considered only those L values that correspond to n-layered atomic slabs with 2≤n≤20, for surface indices (100), (110), and (111). The calculations are based on the density functional theory and self-consistent solution of the Kohn-Sham equations in the local density approximation. Our results show that firstly, the quantum size effects are significant for slabs with sizes smaller than or near to the Fermi wavelength of the valence electrons λ(F), and secondly, some slabs expand while others contract with respect to the bulk spacings. Based on the results, we propose a criterion for realization of significant quantum size effects that lead to expansion of some thin slabs. For more justification of the criterion, we have tested it on Li slabs for 2≤n≤6. We have compared our Al results with those obtained from using all-electron or pseudo-potential first-principles calculations. This comparison shows excellent agreements for Al(100) work functions, and qualitatively good agreements for the other work functions and surface energies. These agreements justify the way we have used the self-compressed stabilized jellium model for the correct description of the properties of simple metal slab systems. On the other hand, our results for the work functions and surface energies of large- n slabs are in good agreement with those obtained from applying the stabilized jellium model for semi-infinite systems. In addition, we have performed the slab calculations in the presence of surface corrugation for selected Al slabs and have shown that the results are worsened.

  13. Mechanical properties of ultra thin metallic films revealed by synchrotron techniques

    Energy Technology Data Exchange (ETDEWEB)

    Gruber, Patric Alfons

    2007-07-20

    A prerequisite for the study of the scaling behavior of mechanical properties of ultra thin films is a suitable testing technique. Therefore synchrotron-based in situ testing techniques were developed and optimized in order to characterize the stress evolution in ultra thin metallic films on compliant polymer substrates during isothermal tensile tests. Experimental procedures for polycrystalline as well as single crystalline films were established. These techniques were used to systematically investigate the influence of microstructure, film thickness (20 to 1000 nm) and temperature (-150 to 200 C) on the mechanical properties. Passivated and unpassivated Au and Cu films as well as single crystalline Au films on polyimide substrates were tested. Special care was also dedicated to the microstructural characterization of the samples which was very important for the correct interpretation of the results of the mechanical tests. Down to a film thickness of about 100 to 200 nm the yield strength increased for all film systems (passivated and unpassivated) and microstructures (polycrystalline and singlecrystalline). The influence of different interfaces was smaller than expected. This could be explained by a dislocation source model based on the nucleation of perfect dislocations. For polycrystalline films the film thickness as well as the grain size distribution had to be considered. For smaller film thicknesses the increase in flow stress was weaker and the deformation behavior changed because the nucleation of perfect dislocations became unfavorable. Instead, the film materials used alternative mechanisms to relieve the high stresses. For regular and homogeneous deformation the total strain was accommodated by the nucleation and motion of partial dislocations. If the deformation was localized due to initial cracks in a brittle interlayer or local delamination, dislocation plasticity was not effective enough to relieve the stress concentration and the films showed

  14. Defect-mediated magnetism of transition metal doped zinc oxide thin films

    Science.gov (United States)

    Roberts, Bradley Kirk

    Magnetism in transition metal doped wide band-gap materials is of interest to further the fundamental science of materials and future spintronics applications. Large inter-dopant separations require mediation of ferromagnetism by some method; carrier-mediated mechanisms are typically applicable to dilute magnetic semiconductors with low Curie temperatures. Dilute magnetic oxides, commonly with poor conductivity and TC above room temperature, cannot be described within this theory. Recent experiment and theory developments suggest that ferromagnetic exchange in these materials can be mediated by defects. This research includes experimental results justifying and developing this approach. Thin films of Cr doped ZnO (band gap ˜3.3 eV) were deposited with several processing variations to enhance the effects of either 0-dimensional (vacancy, hydrogen-related defect) or two-dimensional defects (surface/interface) and thereby affect magnetism and conductivity. We observe surface magnetism in dielectric thin films of oxygen-saturated ZnO:Cr with spontaneous magnetic moment and conductance dropping approximately exponentially with increasing thickness. Uniform defect concentrations would not result in such magnetic ordering behavior indicating that magnetism is mediated either by surface defects or differing concentrations of point defects near the surface. Polarized neutron reflectivity profiling confirms a magnetically active region of ˜8 nm at the film surface. Hydrogen is notoriously present as a defect and carrier dopant in ZnO, and artificial introduction of hydrogen in dielectric ZnO:Cr films results in varying electronic and magnetic behavior. Free carriers introduced with hydrogen doping are not spin-polarized requiring an alternative explanation for ferromagnetism. We find from positron annihilation spectroscopy measurements that hydrogen doping increases the concentration of an altered VZn-related defect (a preliminary interpretation) throughout the film, which

  15. Ion beam modification of sputtered metal nitride thin films: A study of the induced microstructural changes

    International Nuclear Information System (INIS)

    Milosavljevic, M.; Perusko, D.; Popovic, M.; Novakovic, M.

    2008-01-01

    Single CrN and TiN and multilayered AlN/TiN and Al/Ti thin film structures (t = 240-280 nm) deposited on Si were irradiated with 120-200 keV Ar + ions to the fluences ranging from 1 x 10 11 5 to 4 x 10 16 ions/cm 2 . The metallic Al/Ti multilayered structure was also irradiated with high fluence (1- 2 x 10 17 /cm 2 ) nitrogen ions at 200 keV, in order to study interface mixing and formation of nitrides. Single component CrN and TiN thin films were found to grow in the form of a very fine polycrystalline columnar structures. Individual crystal grains were of the order of a few tens of nm in diameter, stretching from the substrate to the surface. After ion irradiation, the layers retain their polycrystalline structure, although the columns become disconnected, the resulting structures consisting of larger grains and nano-particles of the same phase. The implanted samples displayed higher electrical resistivity, presumably due to a higher concentration of point defects and the presence of nano-particles. In Al/Ti and AlN/TiN multilayers irradiated with Ar ions, the as-deposited structures exhibit well-defined, isolated polycrystalline Al and Ti, or AlN and TiN layers, with sharp interfaces. In the metallic system ion irradiation induced interface mixing which progressed with increasing the ion fluence. Mixing was most pronounced at the interfaces that are located around the projected ion range. The multilayered structure was essentially preserved, but the implanted samples exhibit much larger crystal grains. Also, the formation of lamellar columns stretching over a number of individual layers was observed. The AlN/TiN multilayered structures exhibited no measurable interface mixing on Ar irradiation, attributable to the nature of interatomic bonding and to mutual immiscibility of AlN and TiN. High fluence nitrogen ion irradiation of Al/Ti multilayers results in both the introduction of nitrogen into the structures as well as a high level of their intermixing. A

  16. A demonstration of on-line plant corrosion monitoring using thin layer activation

    International Nuclear Information System (INIS)

    Asher, J.; Webb, J.W.; Wilkins, N.J.M.; Lawrence, P.F.; UKAEA Atomic Energy Research Establishment, Harwell. Materials Development Div.)

    1981-12-01

    The corrosion of a 1 inch water pipe in an evaporative cooling system has been monitored over three periods of plant operation using thin layer activation (TLA). The corrosion rate was followed at a sensitivity of about 1 μm and clearly reflected changes in plant operation. Examination of the test section after removal, both by autoradiography and metallography revealed the extent of corrosion and pitting over the active area. (author)

  17. Experimental studies on the deformation and rupture of thin metal plates subject to underwater shock wave loading

    Directory of Open Access Journals (Sweden)

    Chen Pengwan

    2015-01-01

    Full Text Available In this paper, the dynamic deformation and rupture of thin metal plates subject to underwater shock wave loading are studied by using high-speed 3D digital image correlation (3D-DIC. An equivalent device consist of a gas gun and a water anvil tube was used to supplying an exponentially decaying pressure in lieu of explosive detonation which acted on the panel specimen. The thin metal plate is clamped on the end of the shock tube by a flange. The deformation and rupture process of the metal plates subject to underwater shock waves are recorded by two high-speed cameras. The shape, displacement fields and strain fields of the metal plates under dynamic loading are obtained by using VIC-3D digital image correlation software. The strain gauges also were used to monitor the structural response on the selected position for comparison. The DIC data and the strain gauges results show a high level of correlation, and 3D-DIC is proven to be an effective method to measure 3D full-field dynamic response of structures under underwater impact loading. The effects of pre-notches on the failure modes of thin circular plate were also discussed.

  18. Feasibility study of using thin aluminum nitride film as a buffer layer for dual metal gate process

    International Nuclear Information System (INIS)

    Park, Chang Seo; Cho, Byung Jin; Balasubramanian, N.; Kwong, Dim-Lee

    2004-01-01

    We evaluated the feasibility of using an ultra thin aluminum nitride (AlN) buffer layer for dual metal gates CMOS process. Since the buffer layer should not affect the thickness of gate dielectric, it should be removed or consumed during subsequent process. In this work, it was shown that a thin AlN dielectric layer would be reacted with initial gate metals and would be consumed during subsequent annealing, resulting in no increase of equivalent oxide thickness (EOT). The reaction of AlN layer with tantalum (Ta) and hafnium (Hf) during subsequent annealing, which was confirmed with X-ray photoelectron spectroscopy (XPS) analysis, shifted the flat-band voltage of AlN buffered MOS capacitors. No contribution to equivalent oxide thickness (EOT) was also an indication showing the full consumption of AIN, which was confirmed with TEM analysis. The work functions of gate metals were modulated through the reaction, suggesting that the consumption of AlN resulted in new thin metal alloys. Finally, it was found that the barrier heights of the new alloys were consistent with their work functions

  19. Propagation properties of dielectric-lined hollow cylindrical metallic waveguides for THz waves

    International Nuclear Information System (INIS)

    Huang Binke; Zhao Chongfeng

    2013-01-01

    For the rigorous analysis of the propagation properties of dielectric-lined hollow cylindrical metallic waveguides operating in the THz range of frequencies, the characteristic equation for propagation constants is derived from the electromagnetic field equations and the boundary conditions of the dielectric-lined waveguides. The propagation constant of the dominant hybrid HE 11 mode can be obtained by solving the characteristic equation with the improved Muller method. The classical relaxation-effect model for the conductivity is adopted to describe the frequency dispersive behavior of normal metals for the metallic waveguide wall. For a 1.8 mm bore diameter silver waveguide with the inner surface coated with a 17 μm-thick layer of polystyrene(PS) film, the transmission losses of HE 11 mode can be reduced to the level below 1 dB/m at 1.5-3.0 THz, and the dispersion is relatively small for HE 11 mode. In addition, with the PS film thickness increasing, the transmission losses of HE 11 mode increase first and then decrease for a 2.2 mm bore diameter silver waveguide at 2.5 THz, and the minimum loss can be achieved by adopting the optimum dielectric layer thickness. (authors)

  20. Cytotoxicity effects of metal oxide nanoparticles in human tumor cell lines

    International Nuclear Information System (INIS)

    Lozano, T; Rey, M; Gonzalez-Fernandez, Africa; Rojas, E; Moya, S; Fleddermann, J; Estrela-Lopis, I; Donath, E; Wang, B; Mao, Z; Gao, C

    2011-01-01

    Metallic and metal oxide nanoparticles (Nps) have a wide range of applications in various settings including household, cosmetics and chemical industries, as well as for coatings. Nevertheless, an in-depth study of the potential toxic effects of these Nps is still needed, in order to fulfill the mandatory requirement of ensuring the safety of workers, patients and the general public. In this study, Quick Cell colorimetric assays were used to evaluate the in vitro toxicity of different metal oxide Nps [Fe(II,III)O x , TiO x , ZnO and CeO 2 ] in several cell lines. The ZnO Nps were found to be highly toxic, with a lethal dose ≤100 μg/ml for all the cell lines studied. Western blot was also used to test the ability of the different Nps to activate the complement pathway. However, no activation of this cascade was observed when the Nps were added. In addition, the aggregation state and charge of the Nps in culture media was studied by dynamic light scattering (DLS) and measurement of zeta potential. Transmission Electron Microscopy was used to analyze Np uptake and localization at the cellular level.

  1. Semiconductor- to metallic-like behavior in Bi thin films on KCl substrate

    International Nuclear Information System (INIS)

    Bui, Thanh Nhan; Raskin, Jean-Pierre; Hackens, Benoit

    2016-01-01

    Bi thin films, with a thickness of 100 nm, are deposited by electron-beam evaporation on a freshly cleaved (100) KCl substrate. The substrate temperature during film growth (T_d_e_p) ranges from room temperature up to 170 °C. Films deposited at room temperature exhibit a maze-like microstructure typical of the rhombohedral (110) texture, as confirmed by X-ray diffraction. For T_d_e_p above 80 °C, a different microstructure appears, characterized by concentric triangular shapes corresponding to the trigonal (111) texture. Temperature dependence of the resistivity shows a transition from a semiconductor-like behavior for films deposited at room temperature to a metallic-like behavior for T_d_e_p above 80 °C. From magnetoresistance measurements between room temperature and 1.6 K, we extract the electron and hole mobilities, concentrations, and mean free paths, which allow to draw a complete picture of the transport properties of both types of films.

  2. Antimicrobial activity of thin metallic silver flakes, waste products of a manufacturing process.

    Science.gov (United States)

    Anzano, Manuela; Tosti, Alessandra; Lasagni, Marina; Campiglio, Alfredo; Pitea, Demetrio; Collina, Elena

    2011-01-01

    The aim of the research was to develop new products and processes from a manufacturing waste from an Italian metallurgic company. The company produced thin silver metallic films and the production scraps were silver flakes. The possibility to use the silver flakes in water disinfection processes was studied. The antimicrobial activity of the flakes was investigated in batch using Escherichia coli as Gram-negative microorganism model. The flakes did not show any antimicrobial activity, so they were activated with two different processes: thermal activation in reducing atmosphere and chemical activation, obtaining, respectively, reduced flakes (RF) and chemical flakes (CF). The flakes, activated with either treatment, showed antimicrobial activity against E. coli. The kill rate was dependent on the type of activated flakes. The chemical flakes were more efficient than reduced flakes. The kill rate determined for 1 g of CF, 1.0 +/- 0.2 min(-1), was greater than the kill rate determined for 1 g of RF, 0.069 +/- 0.004 min(-1). This was confirmed also by the minimum inhibitory concentration values. It was demonstrated that the antimicrobial capability was dependent on flakes amount and on the type of aqueous medium. Furthermore, the flakes maintained their properties also when used a second time. Finally, the antimicrobial activities of flakes were tested in an effluent of a wastewater treatment plant where a variety of heterotrophic bacteria were present.

  3. Effects of microporosity on the elasticity and yielding of thin-walled metallic hollow spheres

    International Nuclear Information System (INIS)

    Song, Jinliang; Sun, Quansheng; Yang, Zhenning; Luo, Shengmin; Xiao, Xianghui; Arwade, Sanjay R.; Zhang, Guoping

    2017-01-01

    Knowledge of the mechanical properties of porous metallic hollow spheres (MHS) thin wall is of key importance for understanding the engineering performance of both individual ultralight MHS and the innovative MHS-based bulk foams. This paper presents the first integrated experimental and numerical study to determine the elasticity and yielding of the porous MHS wall and their dependence on its microporosity. Nanoindentation was used to probe the Young's modulus and hardness of the nonporous MHS wall material, and synchrotron X-ray computed tomography (XCT) conducted to obtain its porous microstructure and pore morphology. Three-dimensional finite element modeling was performed to obtain the mechanical response of microcubes with varying porosity trimmed from the XCT-derived real digital model of the porous MHS wall. Results show that both the Young's modulus and yield strength of the porous wall decrease nonlinearly with increasing porosity, and their relationships follow the same format of a power law function and agree well with prior experimental results. The empirical relations also reflect certain features of pore morphology, such as pore connectivity and shape. These findings can shed lights on the design, manufacturing, and modeling of individual MHS and MHS-based foams.

  4. ZnO synthesized in air by fs laser irradiation on metallic Zn thin films

    Science.gov (United States)

    Esqueda-Barrón, Y.; Herrera, M.; Camacho-López, S.

    2018-05-01

    We present results on rapid femtosecond laser synthesis of nanostructured ZnO. We used metallic Zn thin films to laser scan along straight tracks, until forming nanostructured ZnO. The synthesis dependence on laser irradiation parameters such as the per pulse fluence, integrated fluence, laser scan speed, and number of scans were explored carefully. SEM characterization showed that the morphology of the obtained ZnO is dictated by the integrated fluence and the laser scan speed; micro Raman and XRD results allowed to identify optimal laser processing conditions for getting good quality ZnO; and cathodoluminescence measurements demonstrated that a single laser scan at high per pulse laser fluence, but a medium integrated laser fluence and a medium laser scan speed favors a low density of point-defects in the lattice. Electrical measurements showed a correlation between resistivity of the laser produced ZnO and point-defects created during the synthesis. Transmittance measurements showed that, the synthesized ZnO can reach down to the supporting fused silica substrate under the right laser irradiation conditions. The physical mechanism for the formation of ZnO, under ultrashort pulse laser irradiation, is discussed in view of the distinct times scales given by the laser pulse duration and the laser pulse repetition rate.

  5. Recent Advances of Solution-Processed Metal Oxide Thin-Film Transistors.

    Science.gov (United States)

    Xu, Wangying; Li, Hao; Xu, Jian-Bin; Wang, Lei

    2018-03-06

    Solution-processed metal oxide thin-film transistors (TFTs) are considered as one of the most promising transistor technologies for future large-area flexible electronics. This review surveys the recent advances in solution-based oxide TFTs, including n-type oxide semiconductors, oxide dielectrics and p-type oxide semiconductors. Firstly, we provide an introduction on oxide TFTs and the TFT configurations and operating principles. Secondly, we present the recent progress in solution-processed n-type transistors, with a special focus on low-temperature and large-area solution processed approaches as well as novel non-display applications. Thirdly, we give a detailed analysis of the state-of-the-art solution-processed oxide dielectrics for low-voltage electronics. Fourthly, we discuss the recent progress in solution-based p-type oxide semiconductors, which will enable the highly desirable future low-cost large-area complementary circuits. Finally, we draw the conclusions and outline the perspectives over the research field.

  6. Ion-beam-induced reactions in metal-thin-film-/BP system

    International Nuclear Information System (INIS)

    Kobayashi, N.; Kumashiro, Y.; Revesz, P.; Mayer, J.W.

    1989-01-01

    Ion-beam-induced reactions in Ni thin films on BP(100) have been investigated and compared with the results of the thermal reaction. The full reaction of Ni layer with BP induced by energetic heavy ion bombardments (600 keV Xe) was observed at 200degC and the formation of the crystalline phase corresponding to a composition of Ni 4 BP was observed. Amorphous layer with the same composition was formed by the bombardments below RT. For thermally annealed samples the reaction of the Ni layer on BP started at temperatures between 350degC and 400degC and full reaction was observed at 450degC. Metal-rich ternary phase or mixed binary phase is thought to be the first crystalline phase formed both in the ion-beam-induced and in the thermally induced reactions. The crystalline phase has the same composition and X-ray diffraction pattern both for ion-beam-induced and thermal reactions. Linear dependence of the reacted thickness on the ion fluence was also observed. The authors would like to express their sincere gratitude to Jian Li and Shi-Qing Wang for X-ray diffraction measurements at Cornell University. One of the authors (N.K.) acknowledge the Agency of Science and Technology of Japan for the financial support of his stay at Cornell. We also acknowledge Dr. H. Tanoue at ETL for his help in ion bombardment experiments. (author)

  7. Coffee-Ring Defined Short Channels for Inkjet-Printed Metal Oxide Thin-Film Transistors.

    Science.gov (United States)

    Li, Yuzhi; Lan, Linfeng; Xiao, Peng; Sun, Sheng; Lin, Zhenguo; Song, Wei; Song, Erlong; Gao, Peixiong; Wu, Weijing; Peng, Junbiao

    2016-08-03

    Short-channel electronic devices several micrometers in length are difficult to implement by direct inkjet printing due to the limitation of position accuracy of the common inkjet printer system and the spread of functional ink on substrates. In this report, metal oxide thin-film transistors (TFTs) with channel lengths of 3.5 ± 0.7 μm were successfully fabricated with a common inkjet printer without any photolithography steps. Hydrophobic CYTOP coffee stripes, made by inkjet-printing and plasma-treating processes, were utilized to define the channel area of TFTs with channel lengths as short as ∼3.5 μm by dewetting the inks of the source/drain (S/D) precursors. Furthermore, by introduction of an ultrathin layer of PVA to modify the S/D surfaces, the spreading of precursor ink of the InOx semiconductor layer was well-controlled. The inkjet-printed short-channel TFTs exhibited a maximum mobility of 4.9 cm(2) V(-1) s(-1) and an on/off ratio of larger than 10(9). This approach of fabricating short-channel TFTs by inkjet printing will promote the large-area fabrication of short-channel TFTs in a cost-effective manner.

  8. Effects of microporosity on the elasticity and yielding of thin-walled metallic hollow spheres

    Energy Technology Data Exchange (ETDEWEB)

    Song, Jinliang [Department of Civil Engineering, Northeast Forestry University, Harbin 150040 (China); Department of Civil and Environmental Engineering, University of Massachusetts Amherst, Amherst, MA 01003 (United States); Sun, Quansheng [Department of Civil Engineering, Northeast Forestry University, Harbin 150040 (China); Yang, Zhenning; Luo, Shengmin [Department of Civil and Environmental Engineering, University of Massachusetts Amherst, Amherst, MA 01003 (United States); Xiao, Xianghui [Advanced Photon Source, Argonne National Laboratory, Argonne, IL 60439 (United States); Arwade, Sanjay R. [Department of Civil and Environmental Engineering, University of Massachusetts Amherst, Amherst, MA 01003 (United States); Zhang, Guoping, E-mail: zhangg@umass.edu [Department of Civil and Environmental Engineering, University of Massachusetts Amherst, Amherst, MA 01003 (United States)

    2017-03-14

    Knowledge of the mechanical properties of porous metallic hollow spheres (MHS) thin wall is of key importance for understanding the engineering performance of both individual ultralight MHS and the innovative MHS-based bulk foams. This paper presents the first integrated experimental and numerical study to determine the elasticity and yielding of the porous MHS wall and their dependence on its microporosity. Nanoindentation was used to probe the Young's modulus and hardness of the nonporous MHS wall material, and synchrotron X-ray computed tomography (XCT) conducted to obtain its porous microstructure and pore morphology. Three-dimensional finite element modeling was performed to obtain the mechanical response of microcubes with varying porosity trimmed from the XCT-derived real digital model of the porous MHS wall. Results show that both the Young's modulus and yield strength of the porous wall decrease nonlinearly with increasing porosity, and their relationships follow the same format of a power law function and agree well with prior experimental results. The empirical relations also reflect certain features of pore morphology, such as pore connectivity and shape. These findings can shed lights on the design, manufacturing, and modeling of individual MHS and MHS-based foams.

  9. Broadband and wide angle near-unity absorption in graphene-insulator-metal thin film stacks

    Science.gov (United States)

    Zhang, H. J.; Zheng, G. G.; Chen, Y. Y.; Xu, L. H.

    2018-05-01

    Broadband unity absorption in graphene-insulator-metal (GIM) structures is demonstrated in the visible (VIS) and near-infrared (NIR) spectra. The spectral characteristics possess broadband absorption peaks, by simply choosing a stack of GIM, while no nanofabrication steps and patterning are required, and thus can be easily fabricated to cover a large area. The electromagnetic (EM) waves can be entirely trapped and the absorption can be greatly enhanced are verified with the finite-difference time-domain (FDTD) and rigorous coupled wave analysis (RCWA) methods. The position and the number of the absorption peak can be totally controlled by adjusting the thickness of the insulator layer. The proposed absorber maintains high absorption (above 90%) for both transverse electric (TE) and transverse magnetic (TM) polarizations, and for angles of incidence up to 80°. This work opens up a promising approach to realize perfect absorption (PA) with ultra-thin film, which could implicate many potential applications in optical detection and optoelectronic devices.

  10. Optical negative refraction by four-wave mixing in thin metallic nanostructures.

    Science.gov (United States)

    Palomba, Stefano; Zhang, Shuang; Park, Yongshik; Bartal, Guy; Yin, Xiaobo; Zhang, Xiang

    2011-10-30

    The law of refraction first derived by Snellius and later introduced as the Huygens-Fermat principle, states that the incidence and refracted angles of a light wave at the interface of two different materials are related to the ratio of the refractive indices in each medium. Whereas all natural materials have a positive refractive index and therefore exhibit refraction in the positive direction, artificially engineered negative index metamaterials have been shown capable of bending light waves negatively. Such a negative refractive index is the key to achieving a perfect lens that is capable of imaging well below the diffraction limit. However, negative index metamaterials are typically lossy, narrow band, and require complicated fabrication processes. Recently, an alternative approach to obtain negative refraction from a very thin nonlinear film has been proposed and experimentally demonstrated in the microwave region. However, such approaches use phase conjugation, which makes optical implementations difficult. Here, we report a simple but different scheme to demonstrate experimentally nonlinear negative refraction at optical frequencies using four-wave mixing in nanostructured metal films. The refractive index can be designed at will by simply tuning the wavelengths of the interacting waves, which could have potential impact on many important applications, such as superlens imaging.

  11. Some metal-graphite and metal-ceramic composites for use as high energy brake lining materials

    Science.gov (United States)

    Bill, R. C.

    1974-01-01

    Materials were studied as candidates for development as potential new aircraft brake lining materials. These families were (1) copper-graphite composites; (2) nickel-graphite composites; (3) copper - rare-earth-oxide (gadolinium oxide (Gd2O3) or lanthanum oxide (La2O3)) composites and copper - rare-earth-oxide (La2O3) - rare-earth-fluoride (lanthanum fluoride (LaF3)) composites; (4) nickel - rare-earth-oxide composites and nickel - rare-earth-oxide - rare-earth-fluoride composites. For comparison purposes, a currently used metal-ceramic composite was also studied. Results showed that the nickel-Gd2O3 and nickel-La2O3-LaF3 composites were comparable or superior in friction and wear performance to the currently used composite and therefore deserve to be considered for further development.

  12. Transparent conducting oxide contacts and textured metal back reflectors for thin film silicon solar cells

    Science.gov (United States)

    Franken, R. H.-J.

    2006-09-01

    With the growing population and the increasing environmental problems of the 'common' fossil and nuclear energy production, the need for clean and sustainable energy sources is evident. Solar energy conversion, such as in photovoltaic (PV) systems, can play a major role in the urgently needed energy transition in electricity production. At the present time PV module production is dominated by the crystalline wafer technology. Thin film silicon technology is an alternative solar energy technology that operates at lower efficiencies, however, it has several significant advantages, such as the possibility of deposition on cheap (flexible) substrates and the much smaller silicon material consumption. Because of the small thickness of the solar cells, light trapping schemes are needed in order to obtain enough light absorption and current generation. This thesis describes the research on thin film silicon solar cells with the focus on the optimization of the transparent conducting oxide (TCO) layers and textured metal Ag substrate layers for the use as enhanced light scattering back reflectors in n-i-p type of solar cells. First we analyzed ZnO:Al (TCO) layers deposited in an radio frequent (rf) magnetron deposition system equipped with a 7 inch target. We have focused on the improvement of the electrical properties without sacrificing the optical properties by increasing the mobility and decreasing the grain boundary density. Furthermore, we described some of the effects on light trapping of ZnO:Al enhanced back reflectors. The described effects are able to explain the observed experimental data. Furthermore, we present a relation between the surface morphology of the Ag back contact and the current enhancement in microcrystalline (muc-Si:H) solar cells. We show the importance of the lateral feature sizes of the Ag surface on the light scattering and introduce a method to characterize the quality of the back reflector by combining the vertical and lateral feature sizes

  13. Localized magnetic excitations for a line of magnetic impurities in a transverse Ising thin film ferromagnet

    International Nuclear Information System (INIS)

    Leite, R.V.; Oliveira Filho, L.O. de; Milton Pereira, J.; Cottam, M.G.; Costa Filho, R.N.

    2009-01-01

    A Green's function method is used to obtain the spectrum of spin excitations associated with a linear array of magnetic impurities implanted in a ferromagnetic thin film. The equations of motion for the Green's functions of the anisotropic film are written in the framework of the Ising model in a transverse field. The frequencies of localized modes are calculated as a function of the interaction parameters for the exchange coupling between impurity-spin pairs, host-spin pairs, and impurity-host neighbors, as well as the effective field parameter at the impurity sites.

  14. Glass transition memorized by the enthalpy-entropy compensation in the shear thinning of supercooled metallic liquids

    Science.gov (United States)

    Zhang, Meng; Liu, Lin

    2018-06-01

    To unravel the true nature of glass transition, broader insights into glass forming have been gained by examining the stress-driven glassy systems, where strong shear thinning, i.e. a reduced viscosity under increasing shear rate, is encountered. It is argued that arbitrarily small stress-driven shear rates would ‘melt’ the glass and erase any memory of its thermal history. In this work, we report a glass transition memorized by the enthalpy-entropy compensation in strongly shear-thinned supercooled metallic liquids, which coincides with the thermal glass transition in both the transition temperature and the activation Gibbs free energy. Our findings provide distinctive insights into both glass forming and shear thinning, and enrich current knowledge on the ubiquitous enthalpy-entropy compensation empirical law in condensed matter physics.

  15. The origin of magnetism in transition metal-doped ZrO2 thin films: Experiment and theory

    KAUST Repository

    Hong, Nguyenhoa

    2013-10-04

    We have investigated the magnetic properties of Fe/Co/Ni-doped ZrO 2 laser ablated thin films in comparison with the known results of Mn-doped ZrO2, which is thought to be a promising material for spintronics applications. It is found that doping with a transition metal can induce room temperature ferromagnetism in \\'fake\\' diamond. Theoretical analysis based on density functional theory confirms the experimental measurements, by revealing that the magnetic moments of Mn- and Ni-doped ZrO2 thin films are much larger than that of Fe- or Co-doped ZrO2 thin films. Most importantly, our calculations confirm that Mn- and Ni-doped ZrO2 show a ferromagnetic ground state in comparison to Co- and Fe-doped ZrO 2, which favor an antiferromagnetic ground state. © 2013 IOP Publishing Ltd.

  16. Metallic transport and large anomalous Hall effect at room temperature in ferrimagnetic Mn{sub 4}N epitaxial thin film

    Energy Technology Data Exchange (ETDEWEB)

    Shen, Xi; Shigematsu, Kei [Department of Chemistry, The University of Tokyo, Tokyo 113-0033 (Japan); Chikamatsu, Akira, E-mail: chikamatsu@chem.s.u-tokyo.ac.jp; Fukumura, Tomoteru [Department of Chemistry, The University of Tokyo, Tokyo 113-0033 (Japan); CREST, Japan Science and Technology Agency (JST), Tokyo 113-0033 (Japan); Hirose, Yasushi; Hasegawa, Tetsuya [Department of Chemistry, The University of Tokyo, Tokyo 113-0033 (Japan); CREST, Japan Science and Technology Agency (JST), Tokyo 113-0033 (Japan); Kanagawa Academy of Science and Technology (KAST), Kawasaki 213-0012 (Japan)

    2014-08-18

    We report the electrical transport properties of ferrimagnetic Mn{sub 4}N (001) epitaxial thin films grown by pulsed laser deposition on MgO (001) substrates. The Mn{sub 4}N thin films were tetragonally distorted with a ratio of out-of-plane to in-plane lattice constants of 0.987 and showed perpendicular magnetic anisotropy with an effective magnetic anisotropy constant of 0.16 MJ/m{sup 3}, which is comparable with that of a recently reported molecular-beam-epitaxy-grown film. The thin films exhibited metallic transport with a room temperature resistivity of 125 μΩ cm in addition to a large anomalous Hall effect with a Hall angle tangent of 0.023.

  17. Metallic transport and large anomalous Hall effect at room temperature in ferrimagnetic Mn4N epitaxial thin film

    International Nuclear Information System (INIS)

    Shen, Xi; Shigematsu, Kei; Chikamatsu, Akira; Fukumura, Tomoteru; Hirose, Yasushi; Hasegawa, Tetsuya

    2014-01-01

    We report the electrical transport properties of ferrimagnetic Mn 4 N (001) epitaxial thin films grown by pulsed laser deposition on MgO (001) substrates. The Mn 4 N thin films were tetragonally distorted with a ratio of out-of-plane to in-plane lattice constants of 0.987 and showed perpendicular magnetic anisotropy with an effective magnetic anisotropy constant of 0.16 MJ/m 3 , which is comparable with that of a recently reported molecular-beam-epitaxy-grown film. The thin films exhibited metallic transport with a room temperature resistivity of 125 μΩ cm in addition to a large anomalous Hall effect with a Hall angle tangent of 0.023.

  18. Current-induced metal-insulator transition in VO x thin film prepared by rapid-thermal-annealing

    International Nuclear Information System (INIS)

    Cho, Choong-Rae; Cho, SungIl; Vadim, Sidorkin; Jung, Ranju; Yoo, Inkyeong

    2006-01-01

    The phenomenon of metal-insulator transition (MIT) in polycrystalline VO x thin films and their preparations have been studied. The films were prepared by sputtering of vanadium thin films succeeded by Rapid Thermal Annealing (RTA) in oxygen ambient at 500 deg. C. Crystalline, compositional, and morphological characterizations reveal a continuous change of phase from vanadium metal to the highest oxide phase, V 2 O 5 , with the time of annealing. Electrical MIT switching has been observed in these films. Sweeping mode, electrode area, and temperature dependent MIT has been studied in Pt/VO x /Pt vertical structure. The important parameters for MIT in VO x have been found to be the current density and the electric field, which depend on carrier density in the films

  19. Periodicity effects on compound waves guided by a thin metal slab sandwiched between two periodically nonhomogeneous dielectric materials

    Science.gov (United States)

    Chiadini, Francesco; Fiumara, Vincenzo; Scaglione, Antonio; Lakhtakia, Akhlesh

    2017-10-01

    Surface-plasmon-polariton waves can be compounded when a sufficiently thin metal layer is sandwiched between two half spaces filled with dissimilar periodically nonhomogeneous dielectric materials. We solved the boundary-value problem for compound waves guided by a layer of a homogeneous and isotropic metal sandwiched between a structurally chiral material (SCM) and a periodically multilayered isotropic dielectric (PMLID) material. We found that the periodicities of the PMLID material and the SCM are crucial to excite a multiplicity of compound guided waves arising from strong coupling between the two interfaces.

  20. Liquid-metal flow through a thin-walled elbow in a plane perpendicular to a uniform magnetic field

    International Nuclear Information System (INIS)

    Walker, J.S.

    1986-04-01

    This paper presents analytical solutions for the liquid-metal flow through two straight pipes connected by a smooth elbow with the same inside radius. The pipes and the elbow lie in a plane which is perpendicular to a uniform, applied magnetic field. The strength of the magnetic field is assumed to be sufficiently strong that inertial and viscous effects are negligible. This assumption is appropriate for the liquid-lithium flow in the blanket of a magnetic confinement fusion reactor, such as a tokamak. The pipes and the elbow have thin metal walls

  1. Nonlinear Color–Metallicity Relations of Globular Clusters. VII. Nonlinear Absorption-line Index versus Metallicity Relations and Bimodal Index Distributions of NGC 5128 Globular Clusters

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Sooyoung; Yoon, Suk-Jin, E-mail: sjyoon0691@yonsei.ac.kr [Department of Astronomy and Center for Galaxy Evolution Research, Yonsei University, Seoul 120-749 (Korea, Republic of)

    2017-07-01

    Spectroscopy on the globular cluster (GC) system of NGC 5128 revealed bimodality in absorption-line index distributions of its old GCs. GC division is a widely observed and studied phenomenon whose interpretation has depicted host galaxy formation and evolution such that it harbors two distinct metallicity groups. Such a conventional view of GC bimodality has mainly been based on photometry. The recent GC photometric data, however, presented an alternative perspective in which the nonlinear metallicity-to-color transformation is responsible for color bimodality of GC systems. Here we apply the same line of analysis to the spectral indices and examine the absorption-line index versus metallicity relations for the NGC 5128 GC system. NGC 5128 GCs display nonlinearity in the metallicity-index planes, most prominently for the Balmer lines and by a non-negligible degree for the metallicity-sensitive magnesium line. We demonstrate that the observed spectroscopic division of NGC 5128 GCs can be caused by the nonlinear nature of the metallicity-to-index conversions and thus one does not need to resort to two separate GC subgroups. Our analysis incorporating this nonlinearity provides a new perspective on the structure of NGC 5128's GC system, and a further piece to the global picture of the formation of GC systems and their host galaxies.

  2. Solvothermal growth of a ruthenium metal-organic framework featuring HKUST-1 structure type as thin films on oxide surfaces.

    Science.gov (United States)

    Kozachuk, Olesia; Yusenko, Kirill; Noei, Heshmat; Wang, Yuemin; Walleck, Stephan; Glaser, Thorsten; Fischer, Roland A

    2011-08-14

    Phase-pure crystalline thin films of a mixed-valence Ru(2)(II,III) metal-organic framework with 1,3,5-benzenetricarboxylate (btc) as a linker were solvothermally grown on amorphous alumina and silica surfaces. Based on the Rietveld refinement, the structure of Ru-MOF was assigned to be analogous to [Cu(3)(btc)(2)] (HKUST-1). This journal is © The Royal Society of Chemistry 2011

  3. Preparation of SrIrO{sub 3} thin films by using metal-organic aerosol deposition technique

    Energy Technology Data Exchange (ETDEWEB)

    Esser, Sebastian; Schneider, Melanie; Moshnyaga, Vasily; Gegenwart, Philipp [1. Physikalisches Institut, Georg-August-Universitaet Goettingen (Germany)

    2013-07-01

    The interplay between spin-orbit coupling and electronic correlations could lead to interesting novel states in iridium oxide materials. We focus on the perovskite phase of SrIrO{sub 3} because Moon et al. [1] showed by using optical spectroscopy and first-principles calculations that the last member of the Ruddlesden-Popper series Sr{sub n+1}Ir{sub n}O{sub 3n+1} (n = ∞) is close to the Mott transition. By using metal-organic aerosol deposition technique we have grown SrIrO{sub 3} thin films on (111)-oriented SrTiO{sub 3} substrates. The cubic symmetry of the SrTiO{sub 3} substrate ensured that the SrIrO{sub 3} thin film grew in the monoclinic perovskite phase. The X-ray diffraction results suggest that SrIrO{sub 3} thin films in perovskite structure were obtained and these show out of plane epitaxy with monoclinic (002){sub m}-orientation. The temperature dependence of the electrical resistivity of these SrIrO{sub 3} thin films were investigated and metallic behavior was observed down to 50 K.

  4. High performance inkjet-printed metal oxide thin film transistors via addition of insulating polymer with proper molecular weight

    Science.gov (United States)

    Sun, Dawei; Chen, Cihai; Zhang, Jun; Wu, Xiaomin; Chen, Huipeng; Guo, Tailiang

    2018-01-01

    Fabrication of metal oxide thin film transistor (MOTFT) arrays using the inkjet printing process has caused tremendous interest for low-cost and large-area flexible electronic devices. However, the inkjet-printed MOTFT arrays usually exhibited a non-uniform geometry due to the coffee ring effect, which restricted their commercial application. Therefore, in this work, a strategy is reported to control the geometry and enhance device performance of inkjet-printed MOTFT arrays by the addition of an insulating polymer to the precursor solution prior to film deposition. Moreover, the impact of the polymer molecular weight (MW) on the geometry, chemical constitution, crystallization, and MOTFT properties of inkjet-printed metal oxide depositions was investigated. The results demonstrated that with an increase of MW of polystyrene (PS) from 2000 to 200 000, the coffee ring was gradually faded and the coffee ring effect was completely eliminated when MW reached 200 000, which is associated with the enhanced viscosity with the insulating polymer, providing a high resistance to the outward capillary flow, which facilitated the depinning of the contact line, leading to the elimination of the coffee ring. More importantly, the carrier mobility increased significantly from 4.2 cm2 V-1 s-1 up to 13.7 cm2 V-1 s-1 as PS MW increased from 2000 to 200 000, which was about 3 times that of the pristine In2O3 TFTs. Grazing incidence X-ray diffraction and X-ray photoelectron spectroscopy results indicated that PS doping of In2O3 films not only frustrated crystallization but also altered chemical constitution by enhancing the formation of the M-O structure, both of which facilitated the carrier transport. These results demonstrated that the simple polymer additive process provides a promising method that can efficiently control the geometry of MO arrays during inkjet printing and maximize the device performance of MOTFT arrays, which showed great potential for the application in next

  5. Inductive coupling between overhead power lines and nearby metallic pipelines. A neural network approach

    Directory of Open Access Journals (Sweden)

    Levente Czumbil

    2015-12-01

    Full Text Available The current paper presents an artificial intelligence based technique applied in the investigation of electromagnetic interference problems between high voltage power lines (HVPL and nearby underground metallic pipelines (MP. An artificial neural network (NN solution has been implemented by the authors to evaluate the inductive coupling between HVPL and MP for different constructive geometries of an electromagnetic interference problem considering a multi-layer soil structure. Obtained results are compared to solutions provided by a finite element method (FEM based analysis and considered as reference. The advantage of the proposed method yields in a simplified computation model compared to FEM, and implicitly a lower computational time.

  6. Source term analysis for a criticality accident in metal production line glove boxes

    International Nuclear Information System (INIS)

    Nguyen, D.H.

    1991-06-01

    A recent development in criticality accident analysis is the deterministic calculations of the transport of fission products and actinides through the barriers of the physical facility. The knowledge of the redistribution of the materials inside the facility will help determine the reentry and clean-up procedures. The amount of radioactive materials released to the environment is the source term for dispersion calculations. We have used an integrated computer model to determine the release of fission products to the environment from a hypothetical criticality event in a glove box of the metal production line (MPL) at the Lawrence Livermore National Laboratory (LLNL)

  7. Temperature-dependence of Threshold Current Density-Length Product in Metallization Lines: A Revisit

    International Nuclear Information System (INIS)

    Duryat, Rahmat Saptono; Kim, Choong-Un

    2016-01-01

    One of the important phenomena in Electromigration (EM) is Blech Effect. The existence of Threshold Current Density-Length Product or EM Threshold has such fundamental and technological consequences in the design, manufacture, and testing of electronics. Temperature-dependence of Blech Product had been thermodynamically established and the real behavior of such interconnect materials have been extensively studied. The present paper reviewed the temperature-dependence of EM threshold in metallization lines of different materials and structure as found in relevant published articles. It is expected that the reader can see a big picture from the compiled data, which might be overlooked when it was examined in pieces. (paper)

  8. A Method to Extract the Intrinsic Mechanical Properties of Soft Metallic Thin Films Based on Nanoindentation Continuous Stiffness Measurement Technique

    International Nuclear Information System (INIS)

    Zhou, X Y; Jiang, Z D; Wang, H R; Zhu, Q

    2006-01-01

    In order to determine accurately the intrinsic hardness of the soft metallic thin film on a hard substrate using nanoindentation, a proper methodology irrespective of several important effects the Oliver-Pharr method concerns is described. First, the original analysis data such as the load, P, and contact stiffness, S, as a function of the indentation depth, h, are acquired by means of the continuous stiffness measurement (CSM) technique. By CSM, the complicating effects including indentation creep behaviour of metal materials as well as thermal drift on the measured results are avoided effectively. Then, the hardness of film-only is calculated via a material characteristic parameter, P/S 2 , which is independent of the contact area, A, based on the constant modulus assumption method. In this way, the influences of the substrate contribution and material pile-up behaviour needn't be accounted for. Guided by above ideas, moreover, a 504 nm Au film on the glass substrate system was chosen to study. The results show that the hardness of Au thin film is 1.6±1 GPa, which agree well with the literature. While the composite hardness measured by Oliver-Pharr method is between 2∼3GPa, obviously, which is overestimated. This implies the present methodology is a more accurate and simple way for extracting the true hardness of the soft metallic thin films

  9. A top-down approach for fabricating three-dimensional closed hollow nanostructures with permeable thin metal walls

    Directory of Open Access Journals (Sweden)

    Carlos Angulo Barrios

    2017-06-01

    Full Text Available We report on a top-down method for the controlled fabrication of three-dimensional (3D, closed, thin-shelled, hollow nanostructures (nanocages on planar supports. The presented approach is based on conventional microelectronic fabrication processes and exploits the permeability of thin metal films to hollow-out polymer-filled metal nanocages through an oxygen-plasma process. The technique is used for fabricating arrays of cylindrical nanocages made of thin Al shells on silicon substrates. This hollow metal configuration features optical resonance as revealed by spectral reflectance measurements and numerical simulations. The fabricated nanocages were demonstrated as a refractometric sensor with a measured bulk sensitivity of 327 nm/refractive index unit (RIU. The pattern design flexibility and controllability offered by top-down nanofabrication techniques opens the door to the possibility of massive integration of these hollow 3D nano-objects on a chip for applications such as nanocontainers, nanoreactors, nanofluidics, nano-biosensors and photonic devices.

  10. Thin metal bilayer for surface plasmon resonance sensors in a multimode plastic optical fiber: the case of palladium and gold metal films

    Science.gov (United States)

    Cennamo, Nunzio; Zuppella, Paola; Bacco, Davide; Corso, Alain J.; Pelizzo, Maria G.; Pesavento, Maria; Zeni, Luigi

    2016-05-01

    A novel sensing platform based on thin metal bilayer for surface plasmon resonance (SPR) in a D-shaped plastic optical fiber (POF) has been designed, implemented and tested. The experimental results are congruent with the numerical studies. This platform has been properly optimized to work in the 1.38 -1.42 refractive index range and it exhibits excellent sensitivity. This refractive index range is very interesting for bio-chemical applications, where the polymer layer are used as receptors (e.g. molecularly imprinted polymer) or to immobilize the bio-receptor on the metal surface. The proposed metallic bilayer is based on palladium and gold films and replaces the traditional gold by exhibiting higher performances. Furthermore, the deposition of the thin bilayer is a single process and no further manufacturing step is required. In fact, in this case the photoresist buffer layer between the POF core and the metal layer, usually required to increase the refractive index range, is no longer necessary.

  11. CZTS absorber layer for thin film solar cells from electrodeposited metallic stacked precursors (Zn/Cu-Sn)

    Energy Technology Data Exchange (ETDEWEB)

    Khalil, M.I., E-mail: mdibrahim.khalil@polimi.it [Dipartimento di Chimica, Materiali e Ing. Chimica “Giulio Natta”, Politecnico di Milano, Via Mancinelli 7, 20131 Milano (Italy); Atici, O. [Dipartimento di Chimica, Materiali e Ing. Chimica “Giulio Natta”, Politecnico di Milano, Via Mancinelli 7, 20131 Milano (Italy); Lucotti, A. [Dipartimento di Chimica, Materiali e Ing. Chimica “Giulio Natta”, Politecnico di Milano, Piazza Leonardo da Vinci 32, 20133 Milano (Italy); Binetti, S.; Le Donne, A. [Department of Materials Science and Solar Energy Research Centre (MIB-SOLAR), University of Milano- Bicocca, Via Cozzi 53, 20125 Milano (Italy); Magagnin, L., E-mail: luca.magagnin@polimi.it [Dipartimento di Chimica, Materiali e Ing. Chimica “Giulio Natta”, Politecnico di Milano, Via Mancinelli 7, 20131 Milano (Italy)

    2016-08-30

    Highlights: • CZTS absorber layer was fabricated by electrodeposition—annealing route from stacked bilayer precursor (Zn/Cu-Sn). • Different characterization techniques have ensured the well formed Kesterite CZTS along the film thickness also. • Two different excitation wavelengths of laser lines (514.5 and 785 nm) have been used for the Raman characterization of the films. • No significant Sn loss is observed in CZTS films after the sulfurization of the stacked bilayer precursors. • Photoluminescence spectroscopy reveals the PL peak of CZTS at 1.15 eV at low temperature (15 K). - Abstract: In the present work, Kesterite-Cu{sub 2}ZnSnS{sub 4} (CZTS) thin films were successfully synthesized from stacked bilayer precursor (Zn/Cu-Sn) through electrodeposition-annealing route. Adherent and homogeneous Cu-poor, Zn-rich stacked metal Cu-Zn-Sn precursors with different compositions were sequentially electrodeposited, in the order of Zn/Cu-Sn onto Mo foil substrates. Subsequently, stacked layers were soft annealed at 350 °C for 20 min in flowing N{sub 2} atmosphere in order to improve intermixing of the elements. Then, sulfurization was completed at 585 °C for 15 min in elemental sulfur environment in a quartz tube furnace with N{sub 2} atmosphere. Morphological, compositional and structural properties of the films were investigated using SEM, EDS and XRD methods. Raman spectroscopy with two different excitation lines (514.5 and 785 nm), has been carried out on the sulfurized films in order to fully characterize the CZTS phase. Higher excitation wavelength showed more secondary phases, but with low intensities. Glow discharge optical emission spectroscopy (GDOES) has also been performed on films showing well formed Kesterite CZTS along the film thickness as compositions of the elements do not change along the thickness. In order to investigate the electronic structure of the CZTS, Photoluminescence (PL) spectroscopy has been carried out on the films, whose

  12. A system for on-line monitoring of light element concentration distributions in thin samples

    NARCIS (Netherlands)

    Brands, P.J.M.; Mutsaers, P.H.A.; Voigt, de M.J.A.

    1999-01-01

    At the Cyclotron Laboratory, a scanning proton microprobe is used to determine concentration distributions in biomedical samples. The data acquired in these measurements used to be analysed in a time consuming off-line analysis. To avoid the loss of valuable measurement and analysis time, DYANA was

  13. Gas Sensing Properties of Metal Doped WO3 Thin Film Sensors Prepared by Pulsed Laser Deposition and DC Sputtering Process

    Science.gov (United States)

    Bhuiyan, Md. Mosharraf Hossain; Ueda, Tsuyoshi; Ikegami, Tomoaki; Ebihara, Kenji

    2006-10-01

    Tungsten trioxide (WO3) thin films gas sensors were prepared by the KrF excimer pulsed laser deposition (PLD) method. The films were prepared on the quartz glass, silicon and also on the Al2O3 sensor substrates with platinum interdigitated electrodes. The effect of doping of the platinum (Pt), palladium (Pd) or gold (Au) on the WO3 thin film was also investigated. These metals were doped to the WO3 thin film by the DC sputtering process during the PLD. The substrate temperature and the oxygen pressure were 400 °C and 100 mTorr, respectively, during the deposition. The films were characterized by atomic force microscopy (AFM) and X-ray diffraction (XRD). The sensitivity of the prepared sensors to 60 ppm NO gas was examined using the two terminal resistance method in a chamber at atmospheric pressure and operating temperatures of 25-350 °C. The sensitivity of the WO3 thin films doped with Pt, Pd, or Au was found to be higher than that of the undoped WO3 thin film.

  14. Reduction of methanol crossover by thin cracked metal barriers at the interface between membrane and electrode in direct methanol fuel cells

    Science.gov (United States)

    Kim, Sungjun; Jang, Segeun; Kim, Sang Moon; Ahn, Chi-Yeong; Hwang, Wonchan; Cho, Yong-Hun; Sung, Yung-Eun; Choi, Mansoo

    2017-09-01

    This work reports the successful reduction in methanol crossover by creating a thin cracked metal barrier at the interface between a Nafion® membrane and an electrode in direct methanol fuel cells (DMFCs). The cracks are generated by simple mechanical stretching of a metal deposited Nafion® membrane as a result of the elastic mismatch between the two attached surfaces. The cracked metal barriers with varying strains (∼0.5 and ∼1.0) are investigated and successfully incorporated into the DMFC. Remarkably, the membrane electrode assembly with the thin metal crack exhibits comparable ohmic resistance as well as reduction of methanol crossover, which enhanced the device performance.

  15. Detection of current-induced vacancies in thin aluminum endash copper lines using positrons

    International Nuclear Information System (INIS)

    Asoka-Kumar, P.; OBrien, K.; Lynn, K.G.; Simpson, P.J.; Rodbell, K.P.

    1996-01-01

    In situ depth-resolved positron annihilation spectroscopy (PAS) is used to show dynamic formation of vacancies in 1 μmx1 μm Al-0.5 wt% Cu lines under current flow. We show that the number of vacancies in these lines increases when a dc current (8x10 4 A/cm 2 ) is applied. This increase in vacancy concentration is substantially greater than that due to thermal vacancy generation alone (4x10 18 cm -3 versus 3x10 17 cm -3 ). Isothermal measurements (with no current flow) yield a vacancy formation energy of 0.60±0.02 eV. These results show that PAS can be used to examine the initial stages of interconnect damage due to electromigration. copyright 1996 American Institute of Physics

  16. Characterization of PZT thin films on metal substrates; Charakterisierung von PZT-Duennschichten auf Metallsubstraten

    Energy Technology Data Exchange (ETDEWEB)

    Dutschke, A.

    2008-02-02

    Lead zirconate titanate (PbZr{sub x}Ti{sub 1-x}O{sub 3},PZT) is one of the most applied ceramic materials because of its distinctive piezo- and ferroelectric properties. Prepared as thin films on flexible, metallic substrates it can be used for various applications as strain gauges, key switches, vibration dampers, microactuators and ultrasonic transducers. The aim of this work is to analyze the microstructure and the phase-content of PZT-thin films deposited on temperature- und acid-resistant hastelloy-sheets, to correlate the results with the ferroelectric and dielectric properties. It is demonstrated, that the specific variation of the microstructure can be achieved by different thermal treatments and the selective addition of Neodymium as dopant. Nd-doping leads to a shift of the maximum nucleation rate towards reduced temperatures and a decrease in the rate of growth compared to undoped films. The PZT-films are prepared by a sol-gel-process in fourfold multilayers with a composition near the morphotropic phase boundary, where the tetragonal und rhombohedral perovskite-phases coexist. The crystallisation in Nd-doped and undoped films takes place heterogeneously, preferentially at the interfaces and on the surface of the multilayered films as well as on the inner surface of pores within the films. For the first time, the Zr:Ti fluctuation phenomena emerging in sol-gel derived PZT films is related to the microstructure and the local phase content on a nanometer scale. In this connection it is proved, that long-distance Zr:Ti gradients arise preferentially before and during the crystallisation of the pyrochlore phase. During the following crystallisation of the perovskite phase, the crystallites grow across these gradients without modifying them. It is pointed out that the fluctuation in the Zr:Ti ratio has only minor influence on the amount of the tetragonal or rhombohedral distortion of the crystallites after the transition from the para- to the ferroelectric

  17. Broadband strip-line ferromagnetic resonance spectroscopy of soft magnetic CoFeTaZr patterned thin films

    Science.gov (United States)

    Gupta, S.; Kumar, D.; Jin, T. L.; Nongjai, R.; Asokan, K.; Ghosh, A.; Aparnadevi, M.; Suri, P.; Piramanayagam, S. N.

    2018-05-01

    In this paper, magnetic and magnetization dynamic properties of compositionally patterned Co46Fe40Ta9Zr5 thin films are investigated. A combination of self-assembly and ion-implantation was employed to locally alter the composition of Co46Fe40Ta9Zr5 thin film in a periodic manner. 20 keV O+ and 60 keV N+ ions were implanted at different doses in order to modify the magnetization dynamic properties of the samples in a controlled fashion. Magnetic hysteresis loop measurements revealed significant changes in the coercivity for higher influences of 5 × 1016 ions per cm2. In particular, N+ implantation was observed to induce two phase formation with high and low coercivities. Broadband strip-line ferromagnetic resonance spectroscopy over wide range of frequency (8 - 20 GHz) was used to study the magnetization dynamics as a function of ion-beam dosage. With higher fluences, damping constant showed a continuous increase from 0.0103 to 0.0430. Such control of magnetic properties at nano-scale using this method is believed to be useful for spintronics and microwave device applications.

  18. Novel enhancement of thin-form-factor galvanic cells: Probing halogenated organic oxidizers and metal anodes

    Energy Technology Data Exchange (ETDEWEB)

    Cardenas-Valencia, Andres M.; Adornato, Lori; Short, R. Timothy; Langebrake, Larry [SRI International, Engineering and Systems Division, Marine Technology Program, 140 Seventh Avenue South, St Petersburg, FL 33701 (United States)

    2008-09-15

    The work reported herein demonstrates a novel method to improve the overall performance of thin-form-factor galvanic cells, fabricated via micro-electromechanical systems (MEMS) processes. Use of solid, low cost, cyclic-halogenated, organic catholyte materials permits water activation of cells consisting of metal anode and catalytic platinum positive electrodes. Similar cells, employing aluminum and zinc anodes, have been activated using sodium hypochlorite (NaClO) solutions, i.e. bleach, in the past. The oxidizers chosen for this study (bromo-, chloro- and iodo-succinimides, and sodium dichloroisocyanuric acid) supply the cathode's oxy-halogenated ions when in contact with water. Zinc, magnesium and aluminum anodes are utilized to fabricate galvanic cells. A comparison between these anodes, coupled with various oxidizers, is included herein. Results using aluminum anode cells show that, even though the utilization efficiency of the catholyte reagents is low (faradic efficiencies between 16 and 19%), the performance of the new water-activated cells (6 cm x 6 cm x 0.25 cm) is superior when compared to those activated with bleach. For instance, operational lives of 6 h (activation with 10% NaClO solution) increase to more than 30 h using the new approach, with a 100-ohm-load. It is also shown that specific energies of 90-110 Wh kg{sup -1} (calculated to include both reagent and packaging mass) could be obtained using the described approach with current draws between 10 and 20 mA. The specific energies obtained suggest that novel MEMS-type cells could have much broader application than low-current, bleach-activated cells. (author)

  19. Swift heavy ion induced surface and microstructural evolution in metallic glass thin films

    International Nuclear Information System (INIS)

    Thomas, Hysen; Thomas, Senoy; Ramanujan, Raju V.; Avasthi, D.K.; Al- Omari, I.A.; Al-Harthi, Salim; Anantharaman, M.R.

    2012-01-01

    Swift heavy ion induced changes in microstructure and surface morphology of vapor deposited Fe–Ni based metallic glass thin films have been investigated by using atomic force microscopy, X-ray diffraction and transmission electron microscopy. Ion beam irradiation was carried out at room temperature with 103 MeV Au 9+ beam with fluences ranging from 3 × 10 11 to 3 × 10 13 ions/cm 2 . The atomic force microscopy images were subjected to power spectral density analysis and roughness analysis using an image analysis software. Clusters were found in the image of as-deposited samples, which indicates that the film growth is dominated by the island growth mode. As-deposited films were amorphous as evidenced from X-ray diffraction; however, high resolution transmission electron microscopy measurements revealed a short range atomic order in the samples with crystallites of size around 3 nm embedded in an amorphous matrix. X-ray diffraction pattern of the as-deposited films after irradiation does not show any appreciable changes, indicating that the passage of swift heavy ions stabilizes the short range atomic ordering, or even creates further amorphization. The crystallinity of the as-deposited Fe–Ni based films was improved by thermal annealing, and diffraction results indicated that ion beam irradiation on annealed samples results in grain fragmentation. On bombarding annealed films, the surface roughness of the films decreased initially, then, at higher fluences it increased. The observed change in surface morphology of the irradiated films is attributed to the interplay between ion induced sputtering, volume diffusion and surface diffusion.

  20. Water-Mediated Photochemical Treatments for Low-Temperature Passivation of Metal-Oxide Thin-Film Transistors.

    Science.gov (United States)

    Heo, Jae Sang; Jo, Jeong-Wan; Kang, Jingu; Jeong, Chan-Yong; Jeong, Hu Young; Kim, Sung Kyu; Kim, Kwanpyo; Kwon, Hyuck-In; Kim, Jaekyun; Kim, Yong-Hoon; Kim, Myung-Gil; Park, Sung Kyu

    2016-04-27

    The low-temperature electrical passivation of an amorphous oxide semiconductor (AOS) thin-film transistor (TFT) is achieved by a deep ultraviolet (DUV) light irradiation-water treatment-DUV irradiation (DWD) method. The water treatment of the first DUV-annealed amorphous indium-gallium-zinc-oxide (a-IGZO) thin film is likely to induce the preferred adsorption of water molecules at the oxygen vacancies and leads to subsequent hydroxide formation in the bulk a-IGZO films. Although the water treatment initially degraded the electrical performance of the a-IGZO TFTs, the second DUV irradiation on the water-treated devices may enable a more complete metal-oxygen-metal lattice formation while maintaining low oxygen vacancies in the oxide films. Overall, the stable and dense metal-oxygen-metal (M-O-M) network formation could be easily achieved at low temperatures (below 150 °C). The successful passivation of structural imperfections in the a-IGZO TFTs, such as hydroxyl group (OH-) and oxygen vacancies, mainly results in the enhanced electrical performances of the DWD-processed a-IGZO TFTs (on/off current ratio of 8.65 × 10(9), subthreshold slope of 0.16 V/decade, an average mobility of >6.94 cm(2) V(-1) s(-1), and a bias stability of ΔVTH IGZO TFTs.

  1. Persistent semi-metal-like nature of epitaxial perovskite CaIrO{sub 3} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Biswas, Abhijit; Jeong, Yoon Hee, E-mail: yhj@postech.ac.kr [Department of Physics, POSTECH, Pohang 790-784 (Korea, Republic of)

    2015-05-21

    Strong spin-orbit coupled 5d transition metal based ABO{sub 3} oxides, especially iridates, allow tuning parameters in the phase diagram and may demonstrate important functionalities, for example, by means of strain effects and symmetry-breaking, because of the interplay between the Coulomb interactions and strong spin-orbit coupling. Here, we have epitaxially stabilized high quality thin films of perovskite (Pv) CaIrO{sub 3}. Film on the best lattice-matched substrate shows semi-metal-like characteristics. Intriguingly, imposing tensile or compressive strain on the film by altering the underlying lattice-mismatched substrates still maintains semi-metallicity with minute modification of the effective correlation as tensile (compressive) strain results in tiny increases (decreases) of the electronic bandwidth. In addition, magnetoresistance remains positive with a quadratic field dependence. This persistent semi-metal-like nature of Pv-CaIrO{sub 3} thin films with minute changes in the effective correlation by strain may provide new wisdom into strong spin-orbit coupled 5d based oxide physics.

  2. Long-term rupture strength as a criterion of operational durability of steam line metal

    International Nuclear Information System (INIS)

    Gofman, Yu.M.

    2000-01-01

    The method for substantiation of the steam line service life prolongation, depending on the achieved level of the metal vulnerability to damage, is proposed. The methodology for evaluating the metal state is developed on the basis of the durability bond with the level of the vulnerability to damage through micropores and the ferrite dislocation structure state. The main changes in the metal at the 1-3 stages of its creep are presented. The micropores are absent at the 1 stage. the micropores of about 0.1 μm in diameter are identified at the beginning of the 2 stage. The ferrite grains on the transition from the 2 to the 3 creep stage are mainly fragmentary. There takes place further micropores growth on the grain boundaries up to 1 - 3 μm. Significant number of recrystallized volumes in the ferrite is observed at the 3 creep stage. The number of micropores of 1 - 3μm in size sharply increases, and, as a rule, chains of micropores are observed. The pores of 5 μm in size are formed at the pre-destruction stage, the fusion whereof leads to microcracks formation [ru

  3. Refractive-index change caused by electrons in amorphous AsS and AsSe thin films doped with different metals by photodiffusion

    International Nuclear Information System (INIS)

    Nordman, Olli; Nordman, Nina; Pashkevich, Valfrid

    2001-01-01

    The refractive-index change caused by electrons was measured in amorphous AsS and AsSe thin films. Films were coated with different metals. Diffraction gratings were written by electron-beam lithography. The interactions of electrons in films with and without the photodiffusion of overcoated metal were compared. Incoming electrons caused metal atom and ion diffusion in both investigated cases. The metal diffusion was dependent on the metal and it was found to influence the refractive index. In some cases lateral diffusion of the metal was noticed. The conditions for applications were verified. Copyright 2001 Optical Society of America

  4. Experiments and numerical modeling of fast flowing liquid metal thin films under spatially varying magnetic field conditions

    Science.gov (United States)

    Narula, Manmeet Singh

    Innovative concepts using fast flowing thin films of liquid metals (like lithium) have been proposed for the protection of the divertor surface in magnetic fusion devices. However, concerns exist about the possibility of establishing the required flow of liquid metal thin films because of the presence of strong magnetic fields which can cause flow disrupting MHD effects. A plan is underway to design liquid lithium based divertor protection concepts for NSTX, a small spherical torus experiment at Princeton. Of these, a promising concept is the use of modularized fast flowing liquid lithium film zones, as the divertor (called the NSTX liquid surface module concept or NSTX LSM). The dynamic response of the liquid metal film flow in a spatially varying magnetic field configuration is still unknown and it is suspected that some unpredicted effects might be lurking. The primary goal of the research work being reported in this dissertation is to provide qualitative and quantitative information on the liquid metal film flow dynamics under spatially varying magnetic field conditions, typical of the divertor region of a magnetic fusion device. The liquid metal film flow dynamics have been studied through a synergic experimental and numerical modeling effort. The Magneto Thermofluid Omnibus Research (MTOR) facility at UCLA has been used to design several experiments to study the MHD interaction of liquid gallium films under a scaled NSTX outboard divertor magnetic field environment. A 3D multi-material, free surface MHD modeling capability is under development in collaboration with HyPerComp Inc., an SBIR vendor. This numerical code called HIMAG provides a unique capability to model the equations of incompressible MHD with a free surface. Some parts of this modeling capability have been developed in this research work, in the form of subroutines for HIMAG. Extensive code debugging and benchmarking exercise has also been carried out. Finally, HIMAG has been used to study the

  5. Metal induced crystallization of amorphous silicon thin films studied by x-ray absorption fine structure spectroscopy

    International Nuclear Information System (INIS)

    Naidu, K Lakshun; Mohiddon, Md Ahamad; Dalba, G; Krishna, M Ghanashyam; Rocca, F

    2013-01-01

    The role of thin metallic layer (Chromium or Nickel) in the crystallization of a-Si film has been studied using X-ray absorption fine structure spectroscopy (XAFS). The films were grown at different substrate temperatures in two different geometrical structures : (a) a 200 nm metal layer (Cr or Ni) was deposited on fused silica (FS) followed by 400 nm of a-Si and (b) the 400 nm a-Si layer was deposited on FS followed by 200 nm of metal layer. XAFS measurements at Cr K-edge and Ni K-edge were done at BM08 – GILDA beamline of the European Synchrotron Research Facility (ESRF, Grenoble, F) in fluorescence mode. To understand the evolution of the local structure of Cr/Ni diffusing from bottom to top and from top to bottom, total reflection and higher incidence angles were employed. The relative content of metal, metal oxide and metal silicides compounds on the upper surface and/or in the bulk of different films has been evaluated as a function of thermal treatment.

  6. Li4SiO4-Based Artificial Passivation Thin Film for Improving Interfacial Stability of Li Metal Anodes.

    Science.gov (United States)

    Kim, Ji Young; Kim, A-Young; Liu, Guicheng; Woo, Jae-Young; Kim, Hansung; Lee, Joong Kee

    2018-03-14

    An amorphous SiO 2 (a-SiO 2 ) thin film was developed as an artificial passivation layer to stabilize Li metal anodes during electrochemical reactions. The thin film was prepared using an electron cyclotron resonance-chemical vapor deposition apparatus. The obtained passivation layer has a hierarchical structure, which is composed of lithium silicide, lithiated silicon oxide, and a-SiO 2 . The thickness of the a-SiO 2 passivation layer could be varied by changing the processing time, whereas that of the lithium silicide and lithiated silicon oxide layers was almost constant. During cycling, the surface of the a-SiO 2 passivation layer is converted into lithium silicate (Li 4 SiO 4 ), and the portion of Li 4 SiO 4 depends on the thickness of a-SiO 2 . A minimum overpotential of 21.7 mV was observed at the Li metal electrode at a current density of 3 mA cm -2 with flat voltage profiles, when an a-SiO 2 passivation layer of 92.5 nm was used. The Li metal with this optimized thin passivation layer also showed the lowest charge-transfer resistance (3.948 Ω cm) and the highest Li ion diffusivity (7.06 × 10 -14 cm 2 s -1 ) after cycling in a Li-S battery. The existence of the Li 4 SiO 4 artificial passivation layer prevents the corrosion of Li metal by suppressing Li dendritic growth and improving the ionic conductivity, which contribute to the low charge-transfer resistance and high Li ion diffusivity of the electrode.

  7. A semi-automatic method for extracting thin line structures in images as rooted tree network

    Energy Technology Data Exchange (ETDEWEB)

    Brazzini, Jacopo [Los Alamos National Laboratory; Dillard, Scott [Los Alamos National Laboratory; Soille, Pierre [EC - JRC

    2010-01-01

    This paper addresses the problem of semi-automatic extraction of line networks in digital images - e.g., road or hydrographic networks in satellite images, blood vessels in medical images, robust. For that purpose, we improve a generic method derived from morphological and hydrological concepts and consisting in minimum cost path estimation and flow simulation. While this approach fully exploits the local contrast and shape of the network, as well as its arborescent nature, we further incorporate local directional information about the structures in the image. Namely, an appropriate anisotropic metric is designed by using both the characteristic features of the target network and the eigen-decomposition of the gradient structure tensor of the image. Following, the geodesic propagation from a given seed with this metric is combined with hydrological operators for overland flow simulation to extract the line network. The algorithm is demonstrated for the extraction of blood vessels in a retina image and of a river network in a satellite image.

  8. Effects of thickness on the nanocrystalline structure and semiconductor-metal transition characteristics of vanadium dioxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Luo, Zhenfei, E-mail: zhfluo8@yahoo.com [Terahertz Research Center, China Academy of Engineering Physics, Mianyang Sichuan 621900 (China); Research Center of Laser Fusion, China Academy of Engineering Physics, Mianyang Sichuan 621900 (China); Zhou, Xun, E-mail: zx_zky@yahoo.com [Terahertz Research Center, China Academy of Engineering Physics, Mianyang Sichuan 621900 (China); Research Center of Laser Fusion, China Academy of Engineering Physics, Mianyang Sichuan 621900 (China); Yan, Dawei [Research Center of Laser Fusion, China Academy of Engineering Physics, Mianyang Sichuan 621900 (China); Wang, Du; Li, Zeyu [Terahertz Research Center, China Academy of Engineering Physics, Mianyang Sichuan 621900 (China); Research Center of Laser Fusion, China Academy of Engineering Physics, Mianyang Sichuan 621900 (China); Yang, Cunbang [Research Center of Laser Fusion, China Academy of Engineering Physics, Mianyang Sichuan 621900 (China); Jiang, Yadong [State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu 610054 (China)

    2014-01-01

    Nanocrystalline vanadium dioxide (VO{sub 2}) thin films were grown on glass substrates by using reactive direct current magnetron sputtering and in situ thermal treatments at low preparation temperatures (≤ 350 °C). The VO{sub 2} thin films were characterized by grazing-incidence X-ray diffraction, field emission scanning electron microscope, transmission electron microscopy and spectroscopic ellipsometry (SE). The semiconductor-metal transition (SMT) characteristics of the films were investigated by four-point probe resistivity measurements and infrared spectrometer equipped with heating pads. The testing results showed that the crystal structure, morphology, grain size and semiconductor-metal transition temperature (T{sub SMT}) significantly changed as the film thickness decreased. Multilayer structures were observed in the particles of thinner films whose average particle size is much larger than the film thickness and average VO{sub 2} grain size. A competition mechanism between the suppression effect of decreased thickness and coalescence of nanograins was proposed to understand the film growth and the formation of multilayer structure. The value of T{sub SMT} was found to decrease as average VO{sub 2} grain size became smaller, and SE results showed that small nanograin size significantly affected the electronic structure of VO{sub 2} film. - Highlights: • Nanocrystalline vanadium dioxide thin films were prepared. • Multilayer structures were observed in the films with large particles. • The transition temperature of the film is correlated with its electronic structure.

  9. Effects of thickness on the nanocrystalline structure and semiconductor-metal transition characteristics of vanadium dioxide thin films

    International Nuclear Information System (INIS)

    Luo, Zhenfei; Zhou, Xun; Yan, Dawei; Wang, Du; Li, Zeyu; Yang, Cunbang; Jiang, Yadong

    2014-01-01

    Nanocrystalline vanadium dioxide (VO 2 ) thin films were grown on glass substrates by using reactive direct current magnetron sputtering and in situ thermal treatments at low preparation temperatures (≤ 350 °C). The VO 2 thin films were characterized by grazing-incidence X-ray diffraction, field emission scanning electron microscope, transmission electron microscopy and spectroscopic ellipsometry (SE). The semiconductor-metal transition (SMT) characteristics of the films were investigated by four-point probe resistivity measurements and infrared spectrometer equipped with heating pads. The testing results showed that the crystal structure, morphology, grain size and semiconductor-metal transition temperature (T SMT ) significantly changed as the film thickness decreased. Multilayer structures were observed in the particles of thinner films whose average particle size is much larger than the film thickness and average VO 2 grain size. A competition mechanism between the suppression effect of decreased thickness and coalescence of nanograins was proposed to understand the film growth and the formation of multilayer structure. The value of T SMT was found to decrease as average VO 2 grain size became smaller, and SE results showed that small nanograin size significantly affected the electronic structure of VO 2 film. - Highlights: • Nanocrystalline vanadium dioxide thin films were prepared. • Multilayer structures were observed in the films with large particles. • The transition temperature of the film is correlated with its electronic structure

  10. The thin brown line: The crucial role of peat in protecting permafrost in Arctic Alaska

    Science.gov (United States)

    Gaglioti, B.; Mann, D. H.; Farquharson, L. M.; Baughman, C. A.; Jones, B. M.; Romanovsky, V. E.; Williams, A. P.; Andreu-Hayles, L.

    2017-12-01

    Ongoing warming threatens to thaw Arctic permafrost and release its stored carbon, which could trigger a permafrost-carbon feedback capable of augmenting global warming. The effects of warming air temperatures on permafrost are complicated by the fact that across much of the Arctic and Subarctic a mat of living plants and decaying litter cover the ground and buffer underlying permafrost from air temperatures. For simplicity here, we refer to this organic mat as "peat". Because this peat modifies heat flow between ground and air, the rate and magnitude of permafrost responses to changing climate - and hence the permafrost-carbon feedback - are partly slaved to the peat layer's slower dynamics. To explore this relationship, we used 14C-age offsets within lake sediments in Alaskan watersheds underlain by yedoma deposits to track the changing responses of permafrost thaw to fluctuating climate as peat accumulated over the last 14,000 years. As the peat layer built up, warming events became less effective at thawing permafrost and releasing ancient carbon. Consistent with this age-offset record, the geological record shows that early in post-glacial times when the peat cover was still thin and limited in extent, warm intervals triggered extensive thermokarst that resulted in rapid aggradation of floodplains. Today in contrast, hillslopes and floodplains remain stable despite rapid warming, probably because of the buffering effects of the extensive peat cover. Another natural experiment is provided by tundra fires like the 2007 Anaktuvuk River fire that removed the peat cover from tundra underlain by continuous permafrost and resulted in widespread thermkarsting. Further support for peat's critical role in protecting permafrost comes from the results of modeling how permafrost temperatures under different peat thicknesses respond to warming air temperature. Although post-industrial warming has not yet surpassed the buffering capacity of 14,000 years of peat buildup in

  11. Addressing Challenges and Scalability in the Synthesis of Thin Uniform Metal Shells on Large Metal Nanoparticle Cores: Case Study of Ag-Pt Core-Shell Nanocubes.

    Science.gov (United States)

    Aslam, Umar; Linic, Suljo

    2017-12-13

    Bimetallic nanoparticles in which a metal is coated with an ultrathin (∼1 nm) layer of a second metal are often desired for their unique chemical and physical properties. Current synthesis methods for producing such core-shell nanostructures often require incremental addition of a shell metal precursor which is rapidly reduced onto metal cores. A major shortcoming of this approach is that it necessitates precise concentrations of chemical reagents, making it difficult to perform at large scales. To address this issue, we considered an approach whereby the reduction of the shell metal precursor was controlled through in situ chemical modification of the precursor. We used this approach to develop a highly scalable synthesis for coating atomic layers of Pt onto Ag nanocubes. We show that Ag-Pt core-shell nanostructures are synthesized in high yields and that these structures effectively combine the optical properties of the plasmonic Ag nanocube core with the surface properties of the thin Pt shell. Additionally, we demonstrate the scalability of the synthesis by performing a 10 times scale-up.

  12. Experimental determination of spring back and thinning effect of aluminum sheet metal during L-bending operation

    International Nuclear Information System (INIS)

    Dilip Kumar, K.; Appukuttan, K.K.; Neelakantha, V.L.; Naik, Padmayya S.

    2014-01-01

    Highlights: • The spring back and thinning effect during L-bending was determined on aluminum sheet. • Beyond a particular clearance, the above said effects are linearly increasing. • Below the critical clearance scratches will occur on the surface due to wear. • As the clearance reduces, the wear rate increases on the punching surface. - Abstract: In automotive industry, significant efforts are being put forth to replace steel sheets with aluminum sheets for various applications. Besides its higher cost, there are several technical hurdles for wide usage of aluminum sheets in forming. Major problems in aluminum sheet metal forming operations are deformation errors and spring back effect. These problems are dependent on the number of parameters such as die and tool geometry, friction condition, loading condition and anisotropic properties of the metal. To predict the exact shape, the geometry based punch contact program must be used. The shape changes once the punch is withdrawn, because of the materials elasticity. Prediction of such a spring back effect is a major challenging problem in industry involving sheet metal forming operations. It also needs applying appropriate back tension during the forming complex shapes. Slight deformation of the metal leads to non-axisymmetric loading. One can predict the residual stress by determining plastic and elastic deformation. Thus appropriate spring back effect can be investigated. The present investigation was carried out to determine the spring back and thinning effect of aluminum sheet metal during L-bending operation. Number of specimens with thickness varying from 0.5 mm to 3.5 mm were prepared. The experiments were conducted for different clearances between punch and die. It is observed that, beyond a particular clearance for each thickness of the sheet metal, the spring back and thinning effects were linearly increasing. However, below the critical clearance, scratches on the surface of the sheet metal were

  13. X-ray line profile analysis of BaTiO3 thin film prepared by sol-gel deposition

    Science.gov (United States)

    Ooi, Zeen Vee; Saif, Ala'eddin A.; Wahab, Yufridin; Jamal, Zul Azhar Zahid

    2017-04-01

    Barium titanate (BaTiO3) thin film was prepared using sol-gel method and spun-coated on SiO2/Si substrate. The phase and crystallinity of the synthesized film were identified using X-ray diffractometer (XRD), which scanned at the range of 20° to 60°. The phase and lattice parameters of the fabricated film were extracted from the recorded XRD patterns using lattice geometry equations. The crystallite size and lattice strain were determined using X-ray line profile analysis (XLPA) with various approaches. The Scherrer equation was applied to the perovskite peaks of the film to explore the size contribution on the peak broadening. Meanwhile, the Williamson-Hall and size-strain plot (SSP) methods were used to review two main independent contributions, i.e. crystallite sizes and lattice strain, on the X-ray line broadening. From the analysis, it is found that Scherrer method gives smallest crystallite size value by ignoring the strain-induced broadening effect. On the other hand, Williamson-Hall and SSP graphs revealed the existence of the lattice strain within the film, which contributes to the broadening in the Bragg peak. The results that analyzed via both techniques show a linear trend with all data points fitted. However, result obtained from SSP method gives better settlement due to the best fit of the data.

  14. Non-LTE line-blanketed model atmospheres of hot stars. 2: Hot, metal-rich white dwarfs

    Science.gov (United States)

    Lanz, T.; Hubeny, I.

    1995-01-01

    We present several model atmospheres for a typical hot metal-rich DA white dwarf, T(sub eff) = 60,000 K, log g = 7.5. We consider pure hydrogen models, as well as models with various abundances of two typical 'trace' elements-carbon and iron. We calculte a number of Local Thermodynamic Equilibrium (LTE) and non-LTE models, taking into account the effect of numerous lines of these elements on the atmospheric structure. We demostrate that while the non-LTE effects are notvery significant for pure hydrogen models, except for describing correctly the central emission in H-alpha they are essential for predicting correctly the ionization balance of metals, such as carbon and iron. Previously reported discrepancies in LTE abundances determinations using C III and C IV lines are easily explained by non-LTE effects. We show that if the iron abundance is larger than 10(exp -5), the iron line opacity has to be considered not only for the spectrum synthesis, but also in the model construction itself. For such metal abundances, non-LTE metal line-blanketed models are needed for detailed abundance studies of hot, metal-rich white dwarfs. We also discuss the predicted Extreme Ultraviolet (EUV) spectrum and show that it is very sensitive to metal abundances, as well as to non-LTE effects.

  15. Piezoelectric characterization of Pb(Zr,Ti)O3 thin films deposited on metal foil substrates by dip coating

    Science.gov (United States)

    Hida, Hirotaka; Hamamura, Tomohiro; Nishi, Takahito; Tan, Goon; Umegaki, Toshihito; Kanno, Isaku

    2017-10-01

    We fabricated the piezoelectric bimorphs composed of Pb(Zr,Ti)O3 (PZT) thin films on metal foil substrates. To efficiently inexpensively manufacture piezoelectric bimorphs with high flexibility, 1.2-µm-thick PZT thin films were directly deposited on both surfaces of 10- and 20-µm-thick bare stainless-steel (SS) foil substrates by dip coating with a sol-gel solution. We confirmed that the PZT thin films deposited on the SS foil substrates at 500 °C or above have polycrystalline perovskite structures and the measured relative dielectric constant and dielectric loss were 323-420 and 0.12-0.17, respectively. The PZT bimorphs were demonstrated by comparing the displacements of the cantilever specimens driven by single- and double-side PZT thin films on the SS foil substrates under the same applied voltage. We characterized the piezoelectric properties of the PZT bimorphs and the calculated their piezoelectric coefficient |e 31,f| to be 0.3-0.7 C/m2.

  16. Photoreactive and Metal-Platable Copolymer Inks for High-Throughput, Room-Temperature Printing of Flexible Metal Electrodes for Thin-Film Electronics.

    Science.gov (United States)

    Yu, You; Xiao, Xiang; Zhang, Yaokang; Li, Kan; Yan, Casey; Wei, Xiaoling; Chen, Lina; Zhen, Hongyu; Zhou, Hang; Zhang, Shengdong; Zheng, Zijian

    2016-06-01

    Photoreactive and metal-platable copolymer inks are reported for the first time to allow high-throughput printing of high-performance flexible electrodes at room temperature. This new copolymer ink accommodates various types of printing technologies, such as soft lithography molding, screen printing, and inkjet printing. Electronic devices including resistors, sensors, solar cells, and thin-film transistors fabricated with these printed electrodes show excellent electrical performance and mechanical flexibility. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  17. A POPULATION OF WEAK METAL-LINE ABSORBERS SURROUNDING THE MILKY WAY

    International Nuclear Information System (INIS)

    Richter, Philipp; Charlton, Jane C.; Fangano, Alessio P. M.; Bekhti, Nadya Ben; Masiero, Joseph R.

    2009-01-01

    We report on the detection of a population of weak metal-line absorbers in the halo or nearby intergalactic environment of the Milky Way. Using high-resolution ultraviolet absorption-line spectra of bright quasars (QSO) obtained with the Space Telescope Imaging Spectrograph (STIS), along six sight lines we have observed unsaturated, narrow absorption in O I and Si II, together with mildly saturated C II absorption at high radial velocities (|v LSR | = 100-320 km s -1 ). The measured O I column densities lie in the range N(O I) 14 cm -2 implying that these structures represent Lyman limit Systems and sub-Lyman limit System with H I column densities between 10 16 and 3 x 10 18 cm -2 , thus below the detection limits of current 21 cm all-sky surveys of high-velocity clouds (HVCs). The absorbers apparently are not directly associated with any of the large high column density HVC complexes, but rather represent isolated, partly neutral gas clumps embedded in a more tenuous, ionized gaseous medium situated in the halo or nearby intergalactic environment of the Galaxy. Photoionization modeling of the observed low ion ratios suggests typical hydrogen volume densities of n H > 0.02 cm -3 and characteristic thicknesses of a several parsec down to subparsec scales. For three absorbers, metallicities are constrained in the range of 0.1-1.0 solar, implying that these gaseous structures may have multiple origins inside and outside the Milky Way. Using supplementary optical absorption-line data, we find for two other absorbers Ca II/O I column-density ratios that correspond to solar Ca/O abundance ratios. This finding indicates that these clouds do not contain significant amounts of dust. This population of low column density gas clumps in the circumgalactic environment of the Milky Way is indicative of the various processes that contribute to the circulation of neutral gas in the extended halos of spiral galaxies. These processes include the accretion of gas from the

  18. Characteristics of indirect laser-induced plasma from a thin film of oil on a metallic substrate

    Science.gov (United States)

    Xiu, Jun-Shan; Bai, Xue-Shi; Motto-Ros, Vincent; Yu, Jin

    2015-04-01

    Optical emissions from the major and trace elements embodied in a transparent gel prepared from cooking oil were detected after the gel was spread in a thin film on a metallic substrate. Such emissions are due to the indirect breakdown of the coating layer. The generated plasma, a mixture of substances from the substrate, the layer, and the ambient gas, was characterized using emission spectroscopy. The characteristics of the plasma formed on the metal with and without the coating layer were investigated. The results showed that Al emission induced from the aluminum substrates coated with oil films extends away from the target surface to ablate the oil film. This finally formed a bifurcating circulation of aluminum vapor against a spherical confinement wall in the front of the plume, which differed from the evolution of the plasma induced from the uncoated aluminum target. The strongest emissions of elements from the oil films can be observed at 2 mm above the target after a detection delay of 1.0 μs. A high temperature zone has been observed in the plasma after the delay of 1.0 μs for the plasma induced from the coated metal. This higher temperature determined in the plasma allows the consideration of the sensitive detection of trace elements in liquids, gels, biological samples, or thin films.

  19. Ultra-thin flexible GaAs photovoltaics in vertical forms printed on metal surfaces without interlayer adhesives

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Juho; Song, Kwangsun; Kim, Namyun; Lee, Jongho, E-mail: jong@gist.ac.kr [School of Mechanical Engineering, Gwangju Institute of Science and Technology (GIST), Gwangju 61005 (Korea, Republic of); Research Institute for Solar and Sustainable Energies (RISE), Gwangju Institute of Science and Technology (GIST), Gwangju 61005 (Korea, Republic of); Hwang, Jeongwoo [Photonic Bio Research Center, Korea Photonics Technology Institute (KOPTI), 9 Cheomdanventure-ro 108beon-gil, Gwangju 61007 (Korea, Republic of); Shin, Jae Cheol [Department of Physics, Yeungnam University, Gyeongsan, Gyeongbuk 38541 (Korea, Republic of)

    2016-06-20

    Wearable flexible electronics often require sustainable power sources that are also mechanically flexible to survive the extreme bending that accompanies their general use. In general, thinner microelectronic devices are under less strain when bent. This paper describes strategies to realize ultra-thin GaAs photovoltaics through the interlayer adhesiveless transfer-printing of vertical-type devices onto metal surfaces. The vertical-type GaAs photovoltaic devices recycle reflected photons by means of bottom electrodes. Systematic studies with four different types of solar microcells indicate that the vertical-type solar microcells, at only a quarter of the thickness of similarly designed lateral-type cells, generate a level of electric power similar to that of thicker cells. The experimental results along with the theoretical analysis conducted here show that the ultra-thin vertical-type solar microcells are durable under extreme bending and thus suitable for use in the manufacturing of wearable flexible electronics.

  20. Solar selective performance of metal nitride/oxynitride based magnetron sputtered thin film coatings: a comprehensive review

    Science.gov (United States)

    Ibrahim, Khalil; Taha, Hatem; Mahbubur Rahman, M.; Kabir, Humayun; Jiang, Zhong-Tao

    2018-03-01

    Since solar-thermal collectors are considered to be the most direct way of converting solar energy into usable forms, in the last few years growing attention has been paid to the development of transition metal nitride and metal oxynitride based thin film selective surfaces for solar-thermal collectors, in order to harvest more solar energy. A solar-thermal energy system, generally, shows very high solar absorption of incident solar radiation from the solar-thermal collectors in the visible range (0.3 to 2.5 μm) and extremely low thermal losses through emission (or high reflection) in the infrared region (≥2.5 μm). The efficiency of a solar-thermal energy conversion system can be improved by the use of solar selective surfaces consisting of novel metallic nanoparticles embedded in metal nitride/oxynitride systems. In order to enhance the effectiveness of solar-thermal devices, solar selective surfaces with high thermal stability are a prerequisite. Over the years, substantial efforts have been made in the field of solar selective surfaces to attain higher solar absorptance and lower thermal emittance in high temperature (above 400 °C) applications. In this article, we review the present state-of-the-art transition metal nitride and/or oxynitride based vacuum sputtered nanostructured thin film coatings, with respect to their optical and solar selective surface applications. We have also summarized the solar selectivity data from recently published investigations, including discussion on some potential applications for these materials.

  1. Study of oxide/metal/oxide thin films for transparent electronics and solar cells applications by spectroscopic ellipsometry

    Directory of Open Access Journals (Sweden)

    Mihaela Girtan

    2017-05-01

    Full Text Available A comprehensive study of a class of Oxide/Metal/Oxide (Oxide = ITO, AZO, TiO2 and Bi2O3, Metal = Au thin films was done by correlating the spectrophotometric studies with the ellispometric models. Films were deposited by successive sputtering from metallic targets In:Sn, Zn:Al, Ti and Bi in reactive atmosphere (for the oxide films and respective inert atmosphere (for the metallic Au interlayer films on glass substrates. The measurements of optical constants n—the refractive index and k—the extinction coefficient, at different incident photon energies for single oxide films and also for the three layers films oxide/metal/oxide samples were made using the spectroscopic ellipsometry (SE technique. The ellipsometry modelling process was coupled with the recorded transmission spectra data of a double beam spectrophotometer and the best fitting parameters were obtained not only by fitting the n and k experimental data with the dispersion fitting curves as usual is practiced in the most reported data in literature, but also by comparing the calculated the transmission coefficient from ellipsometry with the experimental values obtained from direct spectrophotometry measurements. In this way the best dispersion model was deduced for each sample. Very good correlations were obtained for the other different thin films characteristics such as the films thickness, optical band gap and electrical resistivity obtained by other measurements and calculation techniques. The ellipsometric modelling, can hence give the possibility in the future to predict, by ellipsometric simulations, the proper device architecture in function of the preferred optical and electrical properties.

  2. Nondestructive testing of welds on thin-walled tubing

    Science.gov (United States)

    Hagemaier, D. J.; Posakony, G. J.

    1969-01-01

    Special ultrasonic search unit, or transducer assembly, reliably inspects the quality of melt-through welds of fusion welded tubing couplers for hydraulic lines. This instrumentation can also be used to detect faulty braze bonds in thin-walled, small diameter joints and wall thickness of thin-walled metal tubing.

  3. The growth of the metallic ZrNx thin films on P-GaN substrate by pulsed laser deposition

    Science.gov (United States)

    Gu, Chengyan; Sui, Zhanpeng; Li, Yuxiong; Chu, Haoyu; Ding, Sunan; Zhao, Yanfei; Jiang, Chunping

    2018-03-01

    Although metal nitride thin films have attractive prospects in plasmonic applications due to its stable properties in harsh environments containing high temperatures, shock, and contaminants, the effect of deposition parameters on the properties of the metallic ZrN grown on III-N semiconductors by pulse laser deposition still lacks of detailed exploration. Here we have successfully prepared metallic ZrNx films on p-GaN substrate by pulsed laser deposition in N2 ambient of various pressures at a fixed substrate temperature (475 °C). It is found that the films exhibit quite smooth surfaces and (111) preferred orientation. The X-ray photoelectron spectroscopy measurements indicate that carbon contamination can be completely removed and oxygen contamination is significantly reduced on the film surfaces after cleaning using Ar+ sputtering. The N/Zr ratio increases from 0.64 to 0.75 when the N2 pressure increases from 0.5 Pa to 3 Pa. The optical reflectivity spectra measured by the UV-vis-NIR spectrophotometer show that the ZrNx is a typical and good metallic-like material and its metallic properties can be tuned with changing the film compositions.

  4. Behavior of a Spontaneously Arising Human Retinal Pigment Epithelial Cell Line Cultivated on Thin Alginate Film.

    Science.gov (United States)

    Najafabadi, Hoda Shams; Soheili, Zahra-Soheila; Ganji, Shahla Mohammad

    2015-01-01

    A cell line spontaneously derived from human retinal pigment epithelium (hRPE) was cultured on alginate film gelatinized with different concentrations of neurobasal cell culture medium (NCCM) to assess its growth and morphological behavior on this naturally occurring polysaccharide. Neonatal human globes were used to isolate hRPE cells. They were cultured in Dulbecco's modified Eagle's-medium-and-Ham's-F12-medium-(DMEM/F12) supplemented with 10% fetal bovine serum (FBS). Cultures were continuously studied using phase contrast microscopy. After the nineth passage, cells were characterized through immunocytochemical analysis for Oct4, Chx10, and Pax6 and Ki67 markers. In each well of a 6-well microplate, 1 and 2% weight/volume (w/v) alginate in deionized water was added and gelatinized using 1× and 10× NCCM. hRPE cells were cultured at a density of 2 × 105 cells/well in alginate-coated microplates. After 5 days, hRPE colonies were harvested and re-plated on polystyrene substrates. Morphology and growth of hRPE cultures were determined during the next 2 weeks. The first few passages of the cultures were purely hRPE cells that revealed typical morphological features of the pigmented epithelium. They made spaces, devoid of cells, between hRPE cell monolayer and fill in the unoccupied spaces. They grew faster than native RPE cells and rapidly overgrew. Immunocytochemical test revealed that the founded cells expressed Chx10, Pax6, Ki67 and Oct4. The hRPE cells survived unlimitedly on alginate film and formed giant adjoining colonies. After re-plating, hRPE colonies adhered quickly on polystyrene and displayed native hRPE morphological features. Alginate film can support the survival and growth of hRPE cells and induce the cells to re-organize in tissue-like structures.

  5. Electrochemical Synthesis of a Microporous Conductive Polymer Based on a Metal-Organic Framework Thin Film

    KAUST Repository

    Lu, Chunjing; Ben, Teng; Xu, Shixian; Qiu, Shilun

    2014-01-01

    A new approach to preparing 3D microporous conductive polymer has been demonstrated in the electrochemical synthesis of a porous polyaniline network with the utilization of a MOF thin film supported on a conducting substrate. The prepared porous

  6. Functional Design of Dielectric-Metal-Dielectric-Based Thin-Film Encapsulation with Heat Transfer and Flexibility for Flexible Displays.

    Science.gov (United States)

    Kwon, Jeong Hyun; Choi, Seungyeop; Jeon, Yongmin; Kim, Hyuncheol; Chang, Ki Soo; Choi, Kyung Cheol

    2017-08-16

    In this study, a new and efficient dielectric-metal-dielectric-based thin-film encapsulation (DMD-TFE) with an inserted Ag thin film is proposed to guarantee the reliability of flexible displays by improving the barrier properties, mechanical flexibility, and heat dissipation, which are considered to be essential requirements for organic light-emitting diode (OLED) encapsulation. The DMD-TFE, which is composed of Al 2 O 3 , Ag, and a silica nanoparticle-embedded sol-gel hybrid nanocomposite, shows a water vapor transmission rate of 8.70 × 10 -6 g/m 2 /day and good mechanical reliability at a bending radius of 30 mm, corresponding to 0.41% strain for 1000 bending cycles. The electrical performance of a thin-film encapsulated phosphorescent organic light-emitting diode (PHOLED) was identical to that of a glass-lid encapsulated PHOLED. The operational lifetimes of the thin-film encapsulated and glass-lid encapsulated PHOLEDs are 832 and 754 h, respectively. After 80 days, the thin-film encapsulated PHOLED did not show performance degradation or dark spots on the cell image in a shelf-lifetime test. Finally, the difference in lifetime of the OLED devices in relation to the presence and thickness of a Ag film was analyzed by applying various TFE structures to fluorescent organic light-emitting diodes (FOLEDs) that could generate high amounts of heat. To demonstrate the difference in heat dissipation effect among the TFE structures, the saturated temperatures of the encapsulated FOLEDs were measured from the back side surface of the glass substrate, and were found to be 67.78, 65.12, 60.44, and 39.67 °C after all encapsulated FOLEDs were operated at an initial luminance of 10 000 cd/m 2 for sufficient heat generation. Furthermore, the operational lifetime tests of the encapsulated FOLED devices showed results that were consistent with the measurements of real-time temperature profiles taken with an infrared camera. A multifunctional hybrid thin-film encapsulation

  7. Frequency-addressed tunable transmission in optically thin metallic nanohole arrays with dual-frequency liquid crystals

    International Nuclear Information System (INIS)

    Hao Qingzhen; Zhao Yanhui; Juluri, Bala Krishna; Kiraly, Brian; Huang, Tony Jun; Liou, Justin; Khoo, Iam Choon

    2011-01-01

    Frequency-addressed tunable transmission is demonstrated in optically thin metallic nanohole arrays embedded in dual-frequency liquid crystals (DFLCs). The optical properties of the composite system are characterized by the transmission spectra of the nanoholes, and a prominent transmission peak is shown to originate from the resonance of localized surface plasmons at the edges of the nanoholes. An ∼17 nm shift in the transmission peak is observed between the two alignment configurations of the liquid crystals. This DFLC-based active plasmonic system demonstrates excellent frequency-dependent switching behavior and could be useful in future nanophotonic applications.

  8. Metal-organic framework thin films on a surface of optical fibre long period grating for chemical sensing

    Science.gov (United States)

    Hromadka, J.; Tokay, B.; James, S.; Korposh, S.

    2017-04-01

    An optical fibre long period grating (LPG) modified with a thin film of HKUST-1, a material from metal organic framework (MOF) family, was employed for the detection of carbon dioxide. The sensing mechanism is based on the measurement of the change of the refractive index (RI) of the coating that is induced by the penetration of CO2 molecules into the HKUST-1 pores. The responses of the resonance bands in the transmission spectrum of an LPG modified with 40 layers of HKUST-1 upon exposure to carbon dioxide in mixture with nitrogen were investigated.

  9. Laser line scan underwater imaging by complementary metal-oxide-semiconductor camera

    Science.gov (United States)

    He, Zhiyi; Luo, Meixing; Song, Xiyu; Wang, Dundong; He, Ning

    2017-12-01

    This work employs the complementary metal-oxide-semiconductor (CMOS) camera to acquire images in a scanning manner for laser line scan (LLS) underwater imaging to alleviate backscatter impact of seawater. Two operating features of the CMOS camera, namely the region of interest (ROI) and rolling shutter, can be utilized to perform image scan without the difficulty of translating the receiver above the target as the traditional LLS imaging systems have. By the dynamically reconfigurable ROI of an industrial CMOS camera, we evenly divided the image into five subareas along the pixel rows and then scanned them by changing the ROI region automatically under the synchronous illumination by the fun beams of the lasers. Another scanning method was explored by the rolling shutter operation of the CMOS camera. The fun beam lasers were turned on/off to illuminate the narrow zones on the target in a good correspondence to the exposure lines during the rolling procedure of the camera's electronic shutter. The frame synchronization between the image scan and the laser beam sweep may be achieved by either the strobe lighting output pulse or the external triggering pulse of the industrial camera. Comparison between the scanning and nonscanning images shows that contrast of the underwater image can be improved by our LLS imaging techniques, with higher stability and feasibility than the mechanically controlled scanning method.

  10. Metal-insulator transition in SrTi1−xVxO3 thin films

    International Nuclear Information System (INIS)

    Gu, Man; Wolf, Stuart A.; Lu, Jiwei

    2013-01-01

    Epitaxial SrTi 1−x V x O 3 (0 ≤ x ≤ 1) thin films were grown on (001)-oriented (LaAlO 3 ) 0.3 (Sr 2 AlTaO 6 ) 0.7 (LSAT) substrates using the pulsed electron-beam deposition technique. The transport study revealed a temperature driven metal-insulator transition (MIT) at 95 K for x = 0.67. The films with higher vanadium concentration (x > 0.67) were metallic corresponding to a Fermi liquid system. In the insulating phase (x < 0.67), the resistivity behavior was governed by Mott's variable range hopping mechanism. The possible mechanisms for the induced MIT are discussed, including the effects of electron correlation, lattice distortion, and Anderson localization

  11. Infrared-transmittance tunable metal-insulator conversion device with thin-film-transistor-type structure on a glass substrate

    Directory of Open Access Journals (Sweden)

    Takayoshi Katase

    2017-05-01

    Full Text Available Infrared (IR transmittance tunable metal-insulator conversion was demonstrated on a glass substrate by using thermochromic vanadium dioxide (VO2 as the active layer in a three-terminal thin-film-transistor-type device with water-infiltrated glass as the gate insulator. Alternative positive/negative gate-voltage applications induce the reversible protonation/deprotonation of a VO2 channel, and two-orders of magnitude modulation of sheet-resistance and 49% modulation of IR-transmittance were simultaneously demonstrated at room temperature by the metal-insulator phase conversion of VO2 in a non-volatile manner. The present device is operable by the room-temperature protonation in an all-solid-state structure, and thus it will provide a new gateway to future energy-saving technology as an advanced smart window.

  12. Electric-field driven insulator-metal transition and tunable magnetoresistance in ZnO thin film

    Science.gov (United States)

    Zhang, Le; Chen, Shanshan; Chen, Xiangyang; Ye, Zhizhen; Zhu, Liping

    2018-04-01

    Electrical control of the multistate phase in semiconductors offers the promise of nonvolatile functionality in the future semiconductor spintronics. Here, by applying an external electric field, we have observed a gate-induced insulator-metal transition (MIT) with the temperature dependence of resistivity in ZnO thin films. Due to a high-density carrier accumulation, we have shown the ability to inverse change magnetoresistance in ZnO by ionic liquid gating from 10% to -2.5%. The evolution of photoluminescence under gate voltage was also consistent with the MIT, which is due to the reduction of dislocation. Our in-situ gate-controlled photoluminescence, insulator-metal transition, and the conversion of magnetoresistance open up opportunities in searching for quantum materials and ZnO based photoelectric devices.

  13. Initial liquid metal magnetohydrodynamic thin film flow experiments in the MeGA-loop facility at UCLA

    International Nuclear Information System (INIS)

    Morley, N.B.; Gaizer, A.A.; Tillack, M.S.; Abdou, M.A.

    1995-01-01

    Free surface thin film flows of liquid metal were investigated experimentally in the presence of a coplanar magnetic field. This investigation was performed in a new magnetohydrodynamic (MHD) flow facility, the MeGA-loop, utilizing a low melting temperature lead-bismuth alloy as the working metal. Owing to the relatively low magnetic field produced by the present field coil system, the ordinary hydrodynamic and low MHD interaction regimes only were investigated. At the high flow speeds necessary for self cooling, the importance of a well designed and constructed channel becomes obvious. Partial MHD drag, increasing the film height, is observed as Haβ 2 becomes greater than unity. MHD laminarization of the turbulent film flows is observed when Haβ/Re>0.002, but fully laminar flow was not reached. Suggestions for facility upgrades to achieve greater MHD interaction are presented in the context of these initial results. (orig.)

  14. Possibility for using of two Paulownia lines as a tool for remediation of heavy metal contaminated soil.

    Science.gov (United States)

    Tzvetkova, Nikolina; Miladinova, Kamelya; Ivanova, Katya; Georgieva, Teodora; Geneva, Marya; Markovska, Yuliana

    2015-01-01

    One-year-old two Paulownia lines (Ptomentosa x fortunei--TF 01 and R elongata x fortunei--EF 02) were grown, as pot experiment, in soil collected from the field of waste depository of Kremikovtzi ferrous metallurgical industry near Sofia. The soil was heavily polluted with Cd. Metals content (Ca, Mg, K, Na, Cd, Cu, Pb, Zn and Fe) in soil and its distribution in roots, stems and leaves of both lines was studied. The results showed that Ca and K accumulated more in stem, Mg, Na, Fe and Cd in root, while Pb, Cu and Zn in the leaves of both lines. The bloaccumulation factor (BF) and translocation factor (TF) were evaluated in order to determine the potential of plants in removing metals from contaminated soil. The BF for Fe, Pb, Cu and Zn in TF 01 line exceeded that of EF 02 line--5.6; 1.03; 1.20; 1.14 times, respectively. TF was higher in TF 01 line for Fe, Pb and Cd (6.0; 1.92 and 1.03, respectively), but not for Cu and Zn. The success of phytoremediation depends on plant growth and restricted distribution of heavy metals in shoots. Our results showed that stem length and total leaf area of Paulownia elongata x fortunei were higher than Paulownia tomentosa x fortuneibut BF for Cu and Zn and TF for Pb was less. BF for Cd was 1.7 times higher and TF for Zn was 1.03 times higher in Paulownia elongata x fortunei. Selected two lines (P. tomentosa x fortunei--TF 01 and P elongataxfortunei--EF02) were accumulators of Cu, Zn and Cd. Paulownia tomentosax fortunei accumulated more Pb and Zn in aboveground parts, while Paulownia elongata x fortunei--accumulated Zn only. These lines proved to be a promising species for phytoremediation of heavy metal polluted soils due to high biomass productivity.

  15. A Survey of Metal Lines at High Redshift. II. SDSS Absorption Line Studies—O VI Line Density, Space Density, and Gas Metallicity at z abs ~ 3.0

    Science.gov (United States)

    Frank, S.; Mathur, S.; Pieri, M.; York, D. G.

    2010-09-01

    We have analyzed a large data set of O VI absorber candidates found in the spectra of 3702 Sloan Digital Sky Survey (SDSS) quasars, focusing on a subsample of 387 active galactic nuclei sight lines with an average S/N >=5.0, allowing for the detection of absorbers above a rest-frame equivalent width limit of W r >= 0.19 Å for the O VI 1032 Å component. Accounting for random interlopers mimicking an O VI doublet, we derive for the first time a secure lower limit for the redshift number density ΔN/Δz for redshifts z abs >= 2.8. With extensive Monte Carlo simulations, we quantify the losses of absorbers due to blending with the ubiquitous Lyα forest lines and estimate the success rate of retrieving each individual candidate as a function of its redshift, the emission redshift of the quasar, the strength of the absorber, and the measured signal-to-noise ratio (S/N) of the spectrum by modeling typical Lyman forest spectra. These correction factors allow us to derive the "incompleteness and S/N-corrected" redshift number densities of O VI absorbers: ΔN O VI,c /Δzc (2.8 secure lower limit for the contribution of O VI to the closure mass density at the redshifts probed here: ΩO VI (2.8 = 1.9 × 10-8 h -1. We show that the strong lines we probe account for over 65% of the mass in the O VI absorbers; the weak absorbers, while dominant in line number density, do not contribute significantly to the mass density. Making a conservative assumption about the ionization fraction, {O VI}/{O}, and adopting the Anders & Grevesse solar abundance values, we derive the mean metallicity of the gas probed in our search: ζ(2.8 = 3.6 × 10-4 h, in good agreement with other studies. These results demonstrate that large spectroscopic data sets such as SDSS can play an important role in QSO absorption line studies, in spite of the relatively low resolution.

  16. A SURVEY OF METAL LINES AT HIGH REDSHIFT. II. SDSS ABSORPTION LINE STUDIES-O VI LINE DENSITY, SPACE DENSITY, AND GAS METALLICITY AT zabs ∼ 3.0

    International Nuclear Information System (INIS)

    Frank, S.; Mathur, S.; Pieri, M.; York, D. G.

    2010-01-01

    We have analyzed a large data set of O VI absorber candidates found in the spectra of 3702 Sloan Digital Sky Survey (SDSS) quasars, focusing on a subsample of 387 active galactic nuclei sight lines with an average S/N ≥5.0, allowing for the detection of absorbers above a rest-frame equivalent width limit of W r ≥ 0.19 A for the O VI 1032 A component. Accounting for random interlopers mimicking an O VI doublet, we derive for the first time a secure lower limit for the redshift number density ΔN/Δz for redshifts z abs ≥ 2.8. With extensive Monte Carlo simulations, we quantify the losses of absorbers due to blending with the ubiquitous Lyα forest lines and estimate the success rate of retrieving each individual candidate as a function of its redshift, the emission redshift of the quasar, the strength of the absorber, and the measured signal-to-noise ratio (S/N) of the spectrum by modeling typical Lyman forest spectra. These correction factors allow us to derive the 'incompleteness and S/N-corrected' redshift number densities of O VI absorbers: ΔN O V I,c /Δz c (2.8 O V I,c /Δz c (3.2 O V I,c /Δz c (3.6 O V I (2.8 -8 h -1 . We show that the strong lines we probe account for over 65% of the mass in the O VI absorbers; the weak absorbers, while dominant in line number density, do not contribute significantly to the mass density. Making a conservative assumption about the ionization fraction, O VI /O, and adopting the Anders and Grevesse solar abundance values, we derive the mean metallicity of the gas probed in our search: ζ(2.8 -4 h, in good agreement with other studies. These results demonstrate that large spectroscopic data sets such as SDSS can play an important role in QSO absorption line studies, in spite of the relatively low resolution.

  17. Investigations of thin p-GaN light-emitting diodes with surface plasmon compatible metallization

    DEFF Research Database (Denmark)

    Fadil, Ahmed; Ou, Yiyu; Iida, Daisuke

    2016-01-01

    We investigate device performance of InGaN light-emitting diodes with a 30-nm p-GaN layer. The metallization used to separate the p-contact from plasmonic metals, reveals limitations on current spreading which reduces surface plasmonic enhancement.......We investigate device performance of InGaN light-emitting diodes with a 30-nm p-GaN layer. The metallization used to separate the p-contact from plasmonic metals, reveals limitations on current spreading which reduces surface plasmonic enhancement....

  18. Thin and Flexible Fe-Si-B/Ni-Cu-P Metallic Glass Multilayer Composites for Efficient Electromagnetic Interference Shielding.

    Science.gov (United States)

    Zhang, Jijun; Li, Jiawei; Tan, Guoguo; Hu, Renchao; Wang, Junqiang; Chang, Chuntao; Wang, Xinmin

    2017-12-06

    Thin and flexible materials that can provide efficient electromagnetic interference (EMI) shielding are urgently needed, especially if they can be easily processed and withstand harsh environments. Herein, layer-structured Fe-Si-B/Ni-Cu-P metallic glass composites have been developed by simple electroless plating Ni-Cu-P coating on commercial Fe-Si-B metallic glasses. The 0.1 mm-thick composite shows EMI shielding effectiveness of 40 dB over the X-band frequency range, which is higher than those of traditional metals, metal oxides, and their polymer composites of larger thickness. Most of the applied electromagnetic waves are proved to be absorbed rather than bounced back. This performance originates from the combination of a superior soft magnetic property, excellent electrical conductivity, and multiple internal reflections from multilayer composites. In addition, the flexible composites also exhibit good corrosion resistance, high thermal stability, and excellent tensile strength, making them suitable for EMI shielding in harsh chemical or thermal environments.

  19. The Influence of Doping with Transition Metal Ions on the Structure and Magnetic Properties of Zinc Oxide Thin Films

    Directory of Open Access Journals (Sweden)

    Jenica Neamtu

    2014-01-01

    Full Text Available Zn1−xNixO (x=0.03÷0.10 and Zn1−xFexO (x=0.03÷0.15 thin films were synthesized by sol-gel method. The structure and the surface morphology of zinc oxide thin films doped with transition metal (TM ions have been investigated by X-ray diffraction (XRD and atomic force microscopy (AFM. The magnetic studies were done using vibrating sample magnetometer (VSM at room temperature. Experimental results revealed that the substitution of Ni ions in ZnO wurtzite lattice for the contents x=0.03÷0.10 (Ni2+ leads to weak ferromagnetism of thin films. For Zn1-xFexO with x=0.03÷0.05, the Fe3+ ions are magnetic coupling by superexchange interaction via oxygen ions in wurtzite structure. For x=0.10÷0.15 (Fe3+ one can observe the increasing of secondary phase of ZnFe2O4 spinel. The Zn0.9Fe0.1O film shows a superparamagnetic behavior due to small crystallite sizes and the net spin magnetic moments arisen from the interaction between the iron ions through an oxygen ion in the spinel structure.

  20. Influence of oxygen flow rate on metal-insulator transition of vanadium oxide thin films grown by RF magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Ma, Xu; Liu, Xinkun; Li, Haizhu; Huang, Mingju [Henan University, Key Lab of Informational Opto-Electronical Materials and Apparatus, School of Physics and Electronics, Kaifeng (China); Zhang, Angran [South China Normal University, Institute of Electronic Paper Displays, South China Academy of Advanced Optoelectronics, Guangzhou (China)

    2017-03-15

    High-quality vanadium oxide (VO{sub 2}) films have been fabricated on Si (111) substrates by radio frequency (RF) magnetron sputtering deposition method. The sheet resistance of VO{sub 2} has a significant change (close to 5 orders of magnitude) in the process of the metal-insulator phase transition (MIT). The field emission-scanning electron microscope (FE-SEM) results show the grain size of VO{sub 2} thin films is larger with the increase of oxygen flow. The X-ray diffraction (XRD) results indicate the thin films fabricated at different oxygen flow rates grow along the (011) crystalline orientation. As the oxygen flow rate increases from 3 sccm to 6 sccm, the phase transition temperature of the films reduces from 341 to 320 K, the width of the thermal hysteresis loop decreases from 32 to 9 K. The thin films fabricated in the condition of 5 sccm have a high temperature coefficient of resistance (TCR) -3.455%/K with a small resistivity of 2.795 ρ/Ω cm. (orig.)

  1. LINES

    Directory of Open Access Journals (Sweden)

    Minas Bakalchev

    2015-10-01

    Full Text Available The perception of elements in a system often creates their interdependence, interconditionality, and suppression. The lines from a basic geometrical element have become the model of a reductive world based on isolation according to certain criteria such as function, structure, and social organization. Their traces are experienced in the contemporary world as fragments or ruins of a system of domination of an assumed hierarchical unity. How can one release oneself from such dependence or determinism? How can the lines become less “systematic” and forms more autonomous, and less reductive? How is a form released from modernistic determinism on the new controversial ground? How can these elements or forms of representation become forms of action in the present complex world? In this paper, the meaning of lines through the ideas of Le Corbusier, Leonidov, Picasso, and Hitchcock is presented. Spatial research was made through a series of examples arising from the projects of the architectural studio “Residential Transformations”, which was a backbone for mapping the possibilities ranging from playfulness to exactness, as tactics of transformation in the different contexts of the contemporary world.

  2. Improved conductivity of infinite-layer LaNiO2 thin films by metal organic decomposition

    International Nuclear Information System (INIS)

    Ikeda, Ai; Manabe, Takaaki; Naito, Michio

    2013-01-01

    Highlights: •LaNiO 2 films were synthesized by metal organic decomposition and topotactic reduction. •Room-temperature resistivity as low as 0.6 mΩ cm was achieved for infinite-layer LaNiO 2 . •Lattice matched substrates are important in obtaining high conductivity. -- Abstract: Infinite-layer LaNiO 2 thin films were synthesized by metal organic decomposition and subsequent topotactic reduction in hydrogen, and their transport properties were investigated. LaNiO 2 is isostructural to SrCuO 2 , the parent compound of high-T c Sr 0.9 La 0.1 CuO 2 with T c = 44 K, and has 3d 9 configuration, which is very rare in oxides but common to high-T c copper oxides. The bulk synthesis of LaNiO 2 is not easy, but we demonstrate in this article that the thin-film synthesis of LaNiO 2 is rather easy, thanks to a large-surface-to-volume ratio, which makes oxygen diffusion prompt. Our refined synthesis conditions produced highly conducting films of LaNiO 2 . The resistivity of the best film is as low as 640 μΩ cm at 295 K and decreases with temperature down to 230 K but it shows a gradual upturn at lower temperatures

  3. High speed direct imaging of thin metal film ablation by movie-mode dynamic transmission electron microscopy

    Science.gov (United States)

    Hihath, Sahar; Santala, Melissa K.; Cen, Xi; Campbell, Geoffrey; van Benthem, Klaus

    2016-03-01

    Obliteration of matter by pulsed laser beams is not only prevalent in science fiction movies, but finds numerous technological applications ranging from additive manufacturing over machining of micro- and nanostructured features to health care. Pulse lengths ranging from femtoseconds to nanoseconds are utilized at varying laser beam energies and pulse lengths, and enable the removal of nanometric volumes of material. While the mechanisms for removal of material by laser irradiation, i.e., laser ablation, are well understood on the micrometer length scale, it was previously impossible to directly observe obliteration processes on smaller scales due to experimental limitations for the combination of nanometer spatial and nanosecond temporal resolution. Here, we report the direct observation of metal thin film ablation from a solid substrate through dynamic transmission electron microscopy. Quantitative analysis reveals liquid-phase dewetting of the thin-film, followed by hydrodynamic sputtering of nano- to submicron sized metal droplets. We discovered unexpected fracturing of the substrate due to evolving thermal stresses. This study confirms that hydrodynamic sputtering remains a valid mechanism for droplet expulsion on the nanoscale, while irradiation induced stress fields represent limit laser processing of nanostructured materials. Our results allow for improved safety during laser ablation in manufacturing and medical applications.

  4. Metallic behavior of NiS thin film under the structural, optical, electrical and ab initio investigation frameworks

    Energy Technology Data Exchange (ETDEWEB)

    Boughalmi, R. [Unité de physique des dispositifs à semi-conducteurs, Faculté des sciences de Tunis, Tunis El Manar University, 2092 Tunis (Tunisia); Rahmani, R. [Laboratoire de Physique des Couches Minces et Matériaux pour l' Electronique (LPC2ME). Département de physique, Faculté des Sciences, Université d' Oran Es-Sénia, Oran (Algeria); Département de physique, Université des Sciences et de la Technologie d' Oran- Mohamed-Boudiaf, Oran (Algeria); Boukhachem, A., E-mail: abdelwaheb.boukhachem@laposte.net [Unité de physique des dispositifs à semi-conducteurs, Faculté des sciences de Tunis, Tunis El Manar University, 2092 Tunis (Tunisia); Amrani, B.; Driss-Khodja, K. [Laboratoire de Physique des Couches Minces et Matériaux pour l' Electronique (LPC2ME). Département de physique, Faculté des Sciences, Université d' Oran Es-Sénia, Oran (Algeria); Amlouk, M. [Unité de physique des dispositifs à semi-conducteurs, Faculté des sciences de Tunis, Tunis El Manar University, 2092 Tunis (Tunisia)

    2015-08-01

    Nickel sulfide (NiS) thin films were deposited on the glass substrates by spray pyrolysis at 250 °C using an aqueous solution which contains nickel chloride hexahydrate and thiourea as precursors. X-ray diffraction analysis confirms that the hexagonal structure is being part of P6{sub 3}/mmc space group of the deposited films with (100) preferred orientation and lattice parameters a = 3.441 Å and c = 5.320 Å. The optical properties, investigated through transmittance and reflectance measurements reveal that the direct band gap energy (Eg) is around 0.55 eV. The electrical study shows a metallic behavior of the current II-VI binary compound. This behavior regarding NiS II-VI binary sulfide was confirmed by numerical studies based on the density functional theory (DFT) were adopted. The ground state quantities, such as lattice parameter, bulk modulus and its pressure derivative as well as the elastic constants were obtained. The values are consistent with the stability of hexagonal structure. The band structure and the states densities of such material were studied. The results show that there is an agreement between experimental and simulation. - Highlights: • NiS thin films are synthesized by Spray pyrolysis. • NiS is a low band gap compound. • These films have interesting electrical properties showing a metallic behavior. • Computational study confirms the electrical measurements.

  5. Validation of ANSYS CFX for gas and liquid metal flows with conjugate heat transfer within the European project THINS

    Energy Technology Data Exchange (ETDEWEB)

    Papukchiev, A., E-mail: angel.papukchiev@grs.de; Buchholz, S.

    2017-02-15

    Highlights: • ANSYS CFX is validated for gas and liquid metal flows. • L-STAR and TALL-3D experiments are simulated. • Complex flow and heat transfer phenomena are modelled. • Conjugate heat transfer has to be considered in CFD analyses. - Abstract: Within the FP7 European project THINS (Thermal Hydraulics of Innovative Nuclear Systems), numerical tools for the simulation of the thermal-hydraulics of next generation rector systems were developed, applied and validated for innovative coolants. The Gesellschaft fuer Anlagen- und Reaktorsicherheit (GRS) gGmbH participated in THINS with activities related to the development and validation of computational fluid dynamics (CFD) and coupled System Thermal Hydraulics (STH) – CFD codes. High quality measurements from the L-STAR and TALL-3D experiments were used to assess the numerical results. Two-equation eddy viscosity and scale resolving turbulence models were used in the validation process of ANSYS CFX for gas and liquid metal flows with conjugate heat transfer. This paper provides a brief overview on the main results achieved at GRS within the project.

  6. Antimicrobial and anti-biofilm properties of polypropylene meshes coated with metal-containing DLC thin films.

    Science.gov (United States)

    Cazalini, Elisa M; Miyakawa, Walter; Teodoro, Guilherme R; Sobrinho, Argemiro S S; Matieli, José E; Massi, Marcos; Koga-Ito, Cristiane Y

    2017-06-01

    A promising strategy to reduce nosocomial infections related to prosthetic meshes is the prevention of microbial colonization. To this aim, prosthetic meshes coated with antimicrobial thin films are proposed. Commercial polypropylene meshes were coated with metal-containing diamond-like carbon (Me-DLC) thin films by the magnetron sputtering technique. Several dissimilar metals (silver, cobalt, indium, tungsten, tin, aluminum, chromium, zinc, manganese, tantalum, and titanium) were tested and compositional analyses of each Me-DLC were performed by Rutherford backscattering spectrometry. Antimicrobial activities of the films against five microbial species (Candida albicans, Escherichia coli, Pseudomonas aeruginosa, Staphylococcus aureus, and Enterococcus faecalis) were also investigated by a modified Kirby-Bauer test. Results showed that films containing silver and cobalt have inhibited the growth of all microbial species. Tungsten-DLC, tin-DLC, aluminum-DLC, zinc-DLC, manganese-DLC, and tantalum-DLC inhibited the growth of some strains, while chromium- and titanium-DLC weakly inhibited the growth of only one tested strain. In-DLC film showed no antimicrobial activity. The effects of tungsten-DLC and cobalt-DLC on Pseudomonas aeruginosa biofilm formation were also assessed. Tungsten-DLC was able to significantly reduce biofilm formation. Overall, the experimental results in the present study have shown new approaches to coating polymeric biomaterials aiming antimicrobial effect.

  7. Structure and electronic properties of ordered binay thin-film compounds of rare earths with transition metals

    International Nuclear Information System (INIS)

    Schneider, W.

    2004-01-01

    The present thesis deals with preparation of structurally ordered thin-film compounds of the rare-earths Ce and Dy with the transition metals Pd, Rh, and Ni as well as with investigations of their crystalline and electronic structures. Typically 10 nm-thick films were grown in-situ by deposition of the rare-earth metals onto single crystalline transitionmetal substrates or alternatively by codeposition of both constituents onto a W(110) single crystal. In both cases deposition was followed by short-term annealing at temperatures of 400-1000 C to achieve crystalline order. The latter was analyzed by means of low-energy electron-diffraction (LEED) and evaluated on the basis of a simple kinematic theory. The electronic structure was investigated by means of angle-resolved photoemission (ARPES), partially exploiting synchrotron radiation from BESSY. The studies concentrate mainly on the behavior of the valence bands as a function of structure and composition of the thin films, particularly under consideration of surface phenomena. Measured energy dispersions were compared with results of LDA-LCAO calculations performed in the framework of this thesis. Observed shifts of the energy bands by up to 1 eV are attributed in the light of a simple model to incomplete screening of the photoemission final states. (orig.)

  8. Analytical approximate equations for the resistivity and its temperature coefficient in thin polycrystalline metallic films

    International Nuclear Information System (INIS)

    Tellier, C.R.; Tosser, A.J.

    1977-01-01

    In the usual thickness range of sputtered metallic films, analytical linearized approximate expressions of polycrystalline film resistivity and its t.c.r. are deduced from the Mayadas-Shatzkes theoretical equations. A good experimental fit is observed for Al rf sputtered metal films. (orig.) [de

  9. Effect of contact metals on the piezoelectric properties of aluminum nitride thin films

    Energy Technology Data Exchange (ETDEWEB)

    Harman, J.P.; Kabulski, A. (West Virginia U., Morgantown, WV); Pagan, V.R. (West Virginia U., Morgantown, WV); Famouri, K. (West Virginia U., Morgantown, WV); Kasarla, K.R.; Rodak, L.E. (West Virginia U., Morgantown, WV); Hensel, J.P.; Korakakis, D.

    2008-07-01

    The converse piezoelectric response of aluminum nitride evaluated using standard metal insulator semiconductor structures has been found to exhibit a linear dependence on the work function of the metal used as the top electrode. The apparent d33 of the 150–1100 nm films also depends on the dc bias applied to the samples.

  10. Effect of contact metals on the piezoelectric properties of aluminum nitride thin films

    Energy Technology Data Exchange (ETDEWEB)

    Harman, J.; Kabulski, A.; Pagán, V. R.; Famouri, P.; Kasarla, K. R.; Rodak, L. E.; Peter Hensel, J.; Korakakis, D.

    2008-01-01

    The converse piezoelectric response of aluminum nitride evaluated using standard metal insulator semiconductor structures has been found to exhibit a linear dependence on the work function of the metal used as the top electrode. The apparent d33 of the 150–1100 nm films also depends on the dc bias applied to the samples.

  11. Relative SHG measurements of metal thin films: Gold, silver, aluminum, cobalt, chromium, germanium, nickel, antimony, titanium, titanium nitride, tungsten, zinc, silicon and indium tin oxide

    Directory of Open Access Journals (Sweden)

    Franklin Che

    Full Text Available We have experimentally measured the surface second-harmonic generation (SHG of sputtered gold, silver, aluminum, zinc, tungsten, copper, titanium, cobalt, nickel, chromium, germanium, antimony, titanium nitride, silicon and indium tin oxide thin films. The second-harmonic response was measured in reflection using a 150 fs p-polarized laser pulse at 1561 nm. We present a clear comparison of the SHG intensity of these films relative to each other. Our measured relative intensities compare favorably with the relative intensities of metals with published data. We also report for the first time to our knowledge the surface SHG intensity of tungsten and antimony relative to that of well known metallic thin films such as gold and silver. Keywords: Surface second-harmonic generation, Nonlinear optics, Metal thin films

  12. Fabrication of band gap engineered nanostructured tri-metallic (Mn-Co-Ti) oxide thin films

    Science.gov (United States)

    Mansoor, Muhammad Adil; Yusof, Farazila Binti; Nay-Ming, Huang

    2018-04-01

    In continuation of our previous studies on photoelectrochemical (PEC) properties of titanium based composite oxide thin films, an effort is made to develop thin films of 1:1:2 manganese-cobalt-titanium oxide composite, Mn2O3-Co2O3-4TiO2 (MCT), using Co(OAc)2 and a bimetallic manganese-titanium complex, [Mn2Ti4(TFA)8(THF)6(OH)4(O)2].0.4THF (1), where OAc = acetato, TFA = trifluoroacetato and THF = tetrahydrofuran, via aerosol-assisted chemical vapour deposition (AACVD) technique. The X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM) and energy dispersive X-ray (EDX) spectroscopic analyses confirmed formation of thin film of Mn2O3-Co2O3-4TiO2 composite material with uniformly distributed agglomerated particles. The average size of 39.5 nm, of the particles embedded inside agglomerates, was estimated by Scherer's equation. Further, UV-Vis spectroscopy was used to estimate the band gap of 2.62 eV for MCT composite thin film.

  13. Sensitivity enhancement of metal oxide thin film transistor with back gate biasing

    NARCIS (Netherlands)

    Dam, V.A.T.; Blauw, M.A.; Brongersma, S.H.; Crego-Calama, M.

    2011-01-01

    In this work, a room-temperature sensing device for detecting carbon monoxide using a ZnO thin film is presented. The ZnO layer (thickness close to the Debye length), which has a polycrystalline structure, is deposited with atomic-layer deposition (ALD) on an Al2O3/Si substrate. The operating

  14. Plasmon hybridization in silver nanoislands as semishell arrays coupled to a thin metallic film

    DEFF Research Database (Denmark)

    Maaroof, Abbas; Nygaard, Jens Vinge; Sutherland, Duncan S

    2011-01-01

    We obtained experimentally strong plasmon interactions between localized surface plasmon with delocalized surface plasmon polaritons in a new nanosystem of silver semishells island film arrays arranged as a closed-packing structure coupled to an adjacent thin silver film. We show that plasmon int...

  15. Properties of amorphous rare earth-transition metal thin films relevant to thermomagnetic recording

    International Nuclear Information System (INIS)

    Biesterbos, J.W.M.

    1979-01-01

    Properties of amorphous RE-(Fe, Co) thin films relevant to thermomagnetic recording are reviewed. Attention is paid to the writing-, reading- and erasure process. The advantages and disadvantages of the amorphous materials are considered. Experimental data on the writing process are given

  16. Near-field microwave detection of corrosion precursor pitting under thin dielectric coatings in metallic substrate

    International Nuclear Information System (INIS)

    Hughes, D.; Zoughi, R.; Austin, R.; Wood, N.; Engelbart, R.

    2003-01-01

    Detection of corrosion precursor pitting on metallic surfaces under various coatings and on bare metal is of keen interest in evaluation of aircraft fuselage. Near-field microwave nondestructive testing methods, utilizing open-ended rectangular waveguides and coaxial probes, have been used extensively for detection of surface flaws in metals, both on bare metal and under a dielectric coating. This paper presents the preliminary results of using microwave techniques to detect corrosion precursor pitting under paint and primer, applique and on bare metal. Machined pits of 500 μm diameter were detected using open-ended rectangular waveguides at V-Band under paint and primer and applique, and on bare metal. Using coaxial probes, machined pits with diameters down to 150 μm on bare metal were also detected. Relative pit size and density were shown on a corrosion-pitted sample using open-ended rectangular waveguides at frequencies of 35 GHz to 70 GHz. The use of Boeing's MAUS TM scanning systems provided improved results by alleviating standoff variation and scanning artifact. Typical results of this investigation are also presented

  17. On the role of initial void geometry in plastic deformation of metallic thin films: A molecular dynamics study

    Energy Technology Data Exchange (ETDEWEB)

    Su, Yanqing [School of Earth and Atmospheric Sciences, Georgia Institute of Technology, Atlanta, GA 30332-0340 (United States); Xu, Shuozhi, E-mail: shuozhixu@gatech.edu [GWW School of Mechanical Engineering, Georgia Institute of Technology, Atlanta, GA 30332-0405 (United States)

    2016-12-15

    Void growth is usually considered one of the most critical phases leading to dynamic fracture of ductile materials. Investigating the detailed process of void growth at the nanoscale aids in understanding the damage mechanism of metals. While most atomistic simulations by far assume circular or spherical voids for simplicity, recent studies highlight the significance of the initial void ellipticity in mechanical response of voided metals. In this work, we perform large scale molecular dynamics simulations with millions of atoms to investigate the void growth in plastic deformation of thin films in face-centered cubic Cu. It is found that the initial ellipticity and the initial orientation angle of the void have substantial impacts on the dislocation nucleation, the void evolution, and the stress-strain response. In particular, the initial dislocation emission sites and the sequence of slip plane activation vary with the initial void geometry. For the void size evolution, three regimes are identified: (I) the porosity increases relatively slowly in the absence of dislocations, (II) the porosity grows much more rapidly after dislocations start to glide on different slip planes, and (III) the rate of porosity variation becomes much more slowly when dislocations are saturated in the model, and the void surface becomes irregular, non-smooth. In terms of the stress-strain response, the effects of the initial orientation angle are more pronounced when the initial void ellipticity is large; the influence of the initial void ellipticity is different for different initial orientation angles. The effects of the temperature, the strain rate, the loading direction, and the initial porosity in the void growth are also explored. Our results reveal the underlying mechanisms of initial void geometry-dependent plastic deformation of metallic thin films and shed light on informing more accurate theoretical models.

  18. Microstructural, thermal and mechanical behavior of co-sputtered binary Zr–Cu thin film metallic glasses

    Energy Technology Data Exchange (ETDEWEB)

    Apreutesei, M. [MATEIS Laboratory-INSA de Lyon, Bât. B. Pascal, 7 Avenue Jean Capelle, 69621 Villeurbanne Cedex (France); Steyer, P., E-mail: philippe.steyer@insa-lyon.fr [MATEIS Laboratory-INSA de Lyon, Bât. B. Pascal, 7 Avenue Jean Capelle, 69621 Villeurbanne Cedex (France); Joly-Pottuz, L. [MATEIS Laboratory-INSA de Lyon, Bât. B. Pascal, 7 Avenue Jean Capelle, 69621 Villeurbanne Cedex (France); Billard, A. [LERMPS-UTBM, Site de Montbéliard, 90010 Belfort Cédex (France); Qiao, J.; Cardinal, S. [MATEIS Laboratory-INSA de Lyon, Bât. B. Pascal, 7 Avenue Jean Capelle, 69621 Villeurbanne Cedex (France); Sanchette, F. [LASMIS-UTT, UMR CNRS 6279, 12 rue Marie Curie, CS 42060, 10004 Troyes Cedex (France); Pelletier, J.M.; Esnouf, C. [MATEIS Laboratory-INSA de Lyon, Bât. B. Pascal, 7 Avenue Jean Capelle, 69621 Villeurbanne Cedex (France)

    2014-06-30

    Bulk metallic glasses have attracted considerable attention over the last decades for their outstanding mechanical features (high strength, super-elasticity) and physico-chemical properties (corrosion resistance). Recently, some attempts to assign such original behavior from bulk materials to modified surfaces have been reported in the literature based on multicomponent alloys. In this paper we focused on the opportunity to form a metallic glass coating from the binary Zr–Cu system using a magnetron co-sputtering physical vapor deposition process. The composition of the films can be easily controlled by the relative intensities applied to both pure targets, which made possible the study of the whole Zr–Cu system (from 13.4 to 85.0 at.% Cu). The chemical composition of the films was obtained by energy dispersive X-ray spectroscopy, and their microstructure was characterized by scanning and transmission electron microscopy. The thermal stability of the films was deduced from an in situ X-ray diffraction analysis (from room temperature up to 600 °C) and correlated with the results of the differential scanning calorimetry technique. Their mechanical properties were determined by nanoindentation experiments. - Highlights: • We reported deposition of Zr-Cu thin film metallic glasses by co-sputtering • Films were XRD-amorphous in a wide composition range (33.3 – 85.0 at.% Cu) • Microstructure investigation revealed some local nanodomains • We examined the thermal stability by means of in situ X-ray diffraction • Nanoindentation was used to obtained mechanical properties of thin films.

  19. On the role of initial void geometry in plastic deformation of metallic thin films: A molecular dynamics study

    International Nuclear Information System (INIS)

    Su, Yanqing; Xu, Shuozhi

    2016-01-01

    Void growth is usually considered one of the most critical phases leading to dynamic fracture of ductile materials. Investigating the detailed process of void growth at the nanoscale aids in understanding the damage mechanism of metals. While most atomistic simulations by far assume circular or spherical voids for simplicity, recent studies highlight the significance of the initial void ellipticity in mechanical response of voided metals. In this work, we perform large scale molecular dynamics simulations with millions of atoms to investigate the void growth in plastic deformation of thin films in face-centered cubic Cu. It is found that the initial ellipticity and the initial orientation angle of the void have substantial impacts on the dislocation nucleation, the void evolution, and the stress-strain response. In particular, the initial dislocation emission sites and the sequence of slip plane activation vary with the initial void geometry. For the void size evolution, three regimes are identified: (I) the porosity increases relatively slowly in the absence of dislocations, (II) the porosity grows much more rapidly after dislocations start to glide on different slip planes, and (III) the rate of porosity variation becomes much more slowly when dislocations are saturated in the model, and the void surface becomes irregular, non-smooth. In terms of the stress-strain response, the effects of the initial orientation angle are more pronounced when the initial void ellipticity is large; the influence of the initial void ellipticity is different for different initial orientation angles. The effects of the temperature, the strain rate, the loading direction, and the initial porosity in the void growth are also explored. Our results reveal the underlying mechanisms of initial void geometry-dependent plastic deformation of metallic thin films and shed light on informing more accurate theoretical models.

  20. On-line/on-site analysis of heavy metals in water and soils by laser induced breakdown spectroscopy

    Science.gov (United States)

    Meng, Deshuo; Zhao, Nanjing; Wang, Yuanyuan; Ma, Mingjun; Fang, Li; Gu, Yanhong; Jia, Yao; Liu, Jianguo

    2017-11-01

    The enrichment method of heavy metal in water with graphite and aluminum electrode was studied, and combined with plasma restraint device for improving the sensitivity of detection and reducing the limit of detection (LOD) of elements. For aluminum electrode enrichment, the LODs of Cd, Pb and Ni can be as low as several ppb. For graphite enrichment, the measurement time can be less than 3 min. The results showed that the graphite enrichment and aluminum electrode enrichment method can effectively improve the LIBS detection ability. The graphite enrichment method combined with plasma spatial confinement is more suitable for on-line monitoring of industrial waste water, the aluminum electrode enrichment method can be used for trace heavy metal detection in water. A LIBS method and device for soil heavy metals analysis was also developed, and a mobile LIBS system was tested in outfield. The measurement results deduced from LIBS and ICP-MS had a good consistency. The results provided an important application support for rapid and on-site monitoring of heavy metals in soil. (Left: the mobile LIBS system for analysis of heavy metals in soils. Top right: the spatial confinement device. Bottom right: automatic graphite enrichment device for on0line analysis of heavy metals in water).

  1. Time-Resolved In Situ Liquid-Phase Atomic Force Microscopy and Infrared Nanospectroscopy during the Formation of Metal-Organic Framework Thin Films.

    Science.gov (United States)

    Mandemaker, Laurens D B; Filez, Matthias; Delen, Guusje; Tan, Huanshu; Zhang, Xuehua; Lohse, Detlef; Weckhuysen, Bert M

    2018-04-19

    Metal-organic framework (MOF) thin films show unmatched promise as smart membranes and photocatalytic coatings. However, their nucleation and growth resulting from intricate molecular assembly processes are not well understood yet are crucial to control the thin film properties. Here, we directly observe the nucleation and growth behavior of HKUST-1 thin films by real-time in situ AFM at different temperatures in a Cu-BTC solution. In combination with ex situ infrared (nano)spectroscopy, synthesis at 25 °C reveals initial nucleation of rapidly growing HKUST-1 islands surrounded by a continuously nucleating but slowly growing HKUST-1 carpet. Monitoring at 13 and 50 °C shows the strong impact of temperature on thin film formation, resulting in (partial) nucleation and growth inhibition. The nucleation and growth mechanisms as well as their kinetics provide insights to aid in future rational design of MOF thin films.

  2. A survey of infrared continuum versus line radiation from metal halide lamps

    International Nuclear Information System (INIS)

    Kato, M; Herd, M T; Lawler, J E

    2008-01-01

    Near-infrared radiation (near-IR) losses from the arcs of six commercial metal halide high intensity discharge (MH-HID) lamps with various power levels and with both Na/Sc and rare earth doses were surveyed in this paper. A radiometrically calibrated Fourier transform infrared spectrometer was used. Lamps with rare earth doses have appreciably better color rendering indices (CRIs) than lamps with Na/Sc doses. The ratios of near-IR continuum emission over near-IR line emission from these six lamps were compared. The near-IR continuum dominates near-IR losses from lamps with rare earth doses and the continuum is significant, but not dominant, from lamps with Na/Sc doses. There was no strong dependence of this ratio on input power or color temperature (T c ). Total near-IR losses were estimated using absolutely calibrated, horizontal irradiance measurements. Estimated total near-IR losses were correlated with CRI. The lamps with rare earth doses yield the best CRIs, but have appreciably higher near-IR losses due primarily to continuum processes. One of these rare earth MH-HID lamps was used in a more detailed study of the microscopic physics of the continuum mechanism (Herd M T and Lawler E 2007 J. Phys. D: Appl. Phys. 40 3386)

  3. Synthesis and characterization of three-dimensional transition metal ions doped zinc oxide based dilute magnetic semiconductor thin films

    Science.gov (United States)

    Samanta, Kousik

    Dilute magnetic semiconductors (DMS), especially 3d-transition metal (TM) doped ZnO based DMS materials are the most promising candidates for optoelectronics and spintronics applications; e.g. in spin light emitting diode (SLED), spin transistors, and spin field effect transistors (SFET), etc. In the present dissertation, thin films of Zn1-xTMxO (TM = Co2+, Cu2+, and Mn2+) were grown on (0001) oriented Al2O3 substrates by pulsed laser deposition (PLD) technique. The films were highly c-axis oriented, nearly single crystalline, and defects free for a limited concentration of the dilution of transition metal ions. In particular, we have obtained single crystalline phases of Zn1-xTMxO thin films for up to 10, 3, and 5 stoichiometric percentages of Co2+, Cu2+, and Mn2+ respectively. Raman micro-probe system was used to understand the structural and lattice dynamical properties at different physical conditions. The confinement of optical phonons in the disorder lattice was explained by alloy potential fluctuation (APF) using a spatial correlation (SC) model. The detailed analysis of the optical phonon behavior in disorder lattice confirmed the substitution of the transition metal ions in Zn 2+ site of the ZnO host lattice. The secondary phases of ZnCo 2O4, CuO, and ZnMn2O4 were detected in higher Co, Cu, and Mn doped ZnO thin films respectively; where as, XRD did not detect these secondary phases in the same samples. Room temperature ferromagnetism was observed in Co2+ and Cu2+ ions doped ZnO thin films with maximum saturation magnetization (Ms) of 1.0 and 0.76 muB respectively. The origin of the observed ferromagnetism in Zn1-xCoxO thin films was tested by the controlled introduction of shallow donors (Al) in Zn0.9-x Co0.1O:Alx (x = 0.005 and 0.01) thin films. The saturation magnetization for the 10% Co-doped ZnO (1.0 muB /Co) at 300K reduced (˜0.25 muB/Co) due to Al doping. The observed ferromagnetism and the reduction due to Al doping can be explained by the Bound

  4. Low-temperature CVD of iron, cobalt, and nickel nitride thin films from bis[di(tert-butyl)amido]metal(II) precursors and ammonia

    International Nuclear Information System (INIS)

    Cloud, Andrew N.; Abelson, John R.; Davis, Luke M.; Girolami, Gregory S.

    2014-01-01

    Thin films of late transition metal nitrides (where the metal is iron, cobalt, or nickel) are grown by low-pressure metalorganic chemical vapor deposition from bis[di(tert-butyl)amido]metal(II) precursors and ammonia. These metal nitrides are known to have useful mechanical and magnetic properties, but there are few thin film growth techniques to produce them based on a single precursor family. The authors report the deposition of metal nitride thin films below 300 °C from three recently synthesized M[N(t-Bu) 2 ] 2 precursors, where M = Fe, Co, and Ni, with growth onset as low as room temperature. Metal-rich phases are obtained with constant nitrogen content from growth onset to 200 °C over a range of feedstock partial pressures. Carbon contamination in the films is minimal for iron and cobalt nitride, but similar to the nitrogen concentration for nickel nitride. X-ray photoelectron spectroscopy indicates that the incorporated nitrogen is present as metal nitride, even for films grown at the reaction onset temperature. Deposition rates of up to 18 nm/min are observed. The film morphologies, growth rates, and compositions are consistent with a gas-phase transamination reaction that produces precursor species with high sticking coefficients and low surface mobilities

  5. Preparation of thin actinide metal disks using a multiple disk casting technique

    International Nuclear Information System (INIS)

    Conner, W.V.

    1975-01-01

    A casting technique has been developed for preparing multiple actinide metal disks which have a minimum thickness of 0.006 inch. This technique was based on an injection casting procedure which utilizes the weight of a tantalum metal rod to force the molten metal into the mold cavity. Using the proper mold design and casting parameters, it has been possible to prepare ten 1/2 inch diameter neptunium or plutonium metal disks in a single casting, This casting technique is capable of producing disks which are very uniform. The average thickness of the disks from a typical casting will vary no more than 0.001 inch and the variation in the thickness of the individual disks will range from 0.0001 to 0.0005 inch. (Auth.)

  6. Preparation of thin actinide metal disks using a multiple disk casting technique

    International Nuclear Information System (INIS)

    Conner, W.V.

    1976-01-01

    A casting technique has been developed for preparing multiple actinide metal disks which have a minimum thickness of 0.006 inch. This technique was based on an injection casting procedure which utilizes the weight of a tantalum metal rod to force the molten metal into the mold cavity. Using the proper mold design and casting parameters, it has been possible to prepare ten 1/2 inch diameter neptunium or plutonium metal disks in a single casting. This casting technique is capable of producing disks which are very uniform. The average thickness of the disks from a typical casting will vary no more than 0.001 inch and the variation in the thickness of the individual disks will range from 0.0001 to 0.0005 inch. (author)

  7. Excited State Dynamics and Semiconductor-to-Metallic Phase Transition of VO2 Thin Film

    National Research Council Canada - National Science Library

    Liu, Huimin

    2004-01-01

    .... Vanadium dioxide shows an ultrafast, passive phase transition (PT) from a monoclinic semiconductor phase to a metallic tetragonal rutile structure when the sample temperature is above 68 degrees C...

  8. Synthesis of Thin Film Composite Metal-Organic Frameworks Membranes on Polymer Supports

    KAUST Repository

    Barankova, Eva

    2017-01-01

    Since the discovery of size-selective metal-organic frameworks (MOF) researchers have tried to manufacture them into gas separation membranes. ZIF-8 became the most studied MOF for membrane applications mainly because of its simple synthesis, good

  9. The deposition of thin metal films at the high-intensity pulsed-ion-beam influence on the metals

    International Nuclear Information System (INIS)

    Remnev, G.E.; Zakoutaev, A.N.; Grushin, I.I.; Matvenko, V.M.; Potemkin, A.V.; Ryzhkov, V.A.; Chernikov, E.V.

    1996-01-01

    A high-intensity pulsed ion beam with parameters: ion energy 350-500 keV, ion current density at a target > 200 A/cm 2 , pulse duration 60 ns, was used for metal deposition. The film deposition rate was 0.6-4.0 mm/s. Transmission electron microscopy/transmission electron diffraction investigations of the copper target-film system were performed. The impurity content in the film was determined by x-ray fluorescence analysis and secondary ion mass spectrometry. The angular distributions of the ablated plasma were measured. (author). 2 figs., 7 refs

  10. The deposition of thin metal films at the high-intensity pulsed-ion-beam influence on the metals

    Energy Technology Data Exchange (ETDEWEB)

    Remnev, G E; Zakoutaev, A N; Grushin, I I; Matvenko, V M; Potemkin, A V; Ryzhkov, V A [Tomsk Polytechnic Univ. (Russian Federation). Nuclear Physics Inst.; Ivanov, Yu F [Construction Academy, Tomsk (Russian Federation); Chernikov, E V [Siberian Physical Technical Institute, Tomsk (Russian Federation)

    1997-12-31

    A high-intensity pulsed ion beam with parameters: ion energy 350-500 keV, ion current density at a target > 200 A/cm{sup 2}, pulse duration 60 ns, was used for metal deposition. The film deposition rate was 0.6-4.0 mm/s. Transmission electron microscopy/transmission electron diffraction investigations of the copper target-film system were performed. The impurity content in the film was determined by x-ray fluorescence analysis and secondary ion mass spectrometry. The angular distributions of the ablated plasma were measured. (author). 2 figs., 7 refs.

  11. Effects of metal doping on photoinduced hydrophilicity of SnO2 thin ...

    Indian Academy of Sciences (India)

    Debarun Dhar Purkayastha et al the metal layer is approximately 20 nm. The bilayer films are annealed at 200. ◦. C for 110 h to obtain crystalline phases. On annealing, metal (Al3+/Mn2+/ Cu2+) diffuses into the SnO2 layer and exists as a dopant in SnO2 host matrix. The thick- ness of the films is approximately 150 nm in all ...

  12. Characterization of copper thin films prepared by metal self-ion beam sputter deposition

    International Nuclear Information System (INIS)

    Gotoh, Yasuhito; Amioka, Takao; Tsuji, Hiroshi; Ishikawa, Junzo

    1994-01-01

    New deposition technique, 'metal-ion beam self-sputtering' method has been developed. Using metal ions which is the same element with the target material, no contamination with noble gas atoms, which are often used in the conventional sputtering, will occur. In this paper, fundamental measurement of the film purity is reported. As a result of PIXE measurements, it was clarified that only slight amount of iron is incorporated in the films. (author)

  13. Thin-layer chromatography of 49 metal ions on stannic antimonate in aqueous and mixed solvent systems containing dimethylsulfoxide: quantitative separation of uranium from numerous metal ions

    International Nuclear Information System (INIS)

    Qureshi, M.; Varshney, K.G.; Rajput, R.P.S.

    1976-01-01

    Thin-layer chromatography of 40 metal ions in 31 aqueous and mixed solvent systems has been performed on stannic antimonate ion-exchange material. Dimethylsulfoxide has been utilized to resolve such binary mixtures as La 3+ and Ce 3+ from Pr 3+ , Nd 3+ , and Sm 3+ ; VO 2+ from Ti 4+ , Nb 5+ , and Ta 5+ ; Ga 3+ from In 3+ , Tl + , and Y 3+ ; Fe 3+ from VO 2+ ; and Mg 2+ from Al 3+ . Quantitative separation of 200 to 800 μg U from its binary mixtures and from the synthetic mixtures containing Mg 2+ , Bi 3+ , Fe 3+ , Th 4+ , Ce 4+ , Cr 3+ , Zr 4+ , Hf 4+ , Ti 4+ Mn 2+ , Cu 2+ , Ce 3+ , In 3+ , Y 3+ , Ca 2+ , Co 2+ , Tl + , Nb 5+ , and Ag + has been obtained

  14. Synthesis and characterization of nanoporous strontium-doped lanthanum cobaltite thin film using metal organic chemical solution deposition

    Energy Technology Data Exchange (ETDEWEB)

    Park, Jun-Sik [Department of Mechanical Convergence Engineering, Hanyang University, Seoul 133-791 (Korea, Republic of); Kim, Young-Beom, E-mail: ybkim@hanyang.ac.kr [Department of Mechanical Convergence Engineering, Hanyang University, Seoul 133-791 (Korea, Republic of); Institute of Nano Science and Technology, Hanyang University, Seoul 133-791 (Korea, Republic of)

    2016-01-29

    By employing strontium as a dopant of lanthanum cobaltite (LaCoO{sub 3}), strontium-doped lanthanum cobaltite (La{sub 1−x}Sr{sub x}CoO{sub 3−δ}, LSC) thin film was fabricated using a metal organic chemical solution deposition (MOCSD) method. Lanthanum nitrate hexahydrate [La(NO{sub 3}){sub 3}6H{sub 2}O], strontium acetate [Sr(CH{sub 3}COO){sub 2}], and cobalt acetate tetrahydrate [Co(CH{sub 3}COO){sub 2}4H{sub 2}O] were used as precursors. The coating process was performed through a spin coating method on a substrate, which were then heat treated under various temperature conditions. Electrical properties, microstructures, and crystalline structures with respect to sintering temperature were analyzed. According to these analyses, the change in surface morphology, phase shift, and conductive properties were closely related, which could explain their respective behaviors. Furthermore, sintered strontium-doped lanthanum perovskite oxides showed various conductivities according to the amount of dopant. With the molar ratio of strontium that is stoichiometrically equivalent to lanthanum (La{sub 0.5}Sr{sub 0.5}CoO{sub 3−δ}) thin film showed the best conductivity in the sintering temperature range of 650–700 °C, with perovskite phases formed at this temperature condition. As the electrically conductive properties of the thin film are a function of thickness, the films were coated several times to a thickness of approximately 300 nm, with the lowest resistivity (approximately 9.06 × 10{sup −4} Ω cm) observed at the optimized sintering temperature and solution composition. - Highlights: • LSC thin film was fabricated by metal organic chemical solution deposition (MOCSD). • The film shows good agreement on the electrical conductivity of LSC by conventional methods. • The properties of LSC film are influenced by the surface morphology and crystalline phase. • Optimal molar ratio of strontium for the highest conductivity was investigated.

  15. In situ fabrication of electrochemically grown mesoporous metallic thin films by anodic dissolution in deep eutectic solvents.

    Science.gov (United States)

    Renjith, Anu; Roy, Arun; Lakshminarayanan, V

    2014-07-15

    We describe here a simple electrodeposition process of forming thin films of noble metallic nanoparticles such as Au, Ag and Pd in deep eutectic solvents (DES). The method consists of anodic dissolution of the corresponding metal in DES followed by the deposition on the cathodic surface. The anodic dissolution process in DES overcomes the problems associated with copious hydrogen and oxygen evolution on the electrode surface when carried out in aqueous medium. The proposed method utilizes the inherent abilities of DES to act as a reducing medium while simultaneously stabilizing the nanoparticles that are formed. The mesoporous metal films were characterized by SEM, XRD and electrochemical techniques. Potential applications of these substrates in surface enhanced Raman spectroscopy and electrocatalysis have been investigated. A large enhancement of Raman signal of analyte was achieved on the mesoporous silver substrate after removing all the stabilizer molecules from the surface by calcination. The highly porous texture of the electrodeposited film provides superior electro catalytic performance for hydrogen evolution reaction (HER). The mechanisms of HER on the fabricated substrates were studied by Tafel analysis and electrochemical impedance spectroscopy (EIS). Copyright © 2014 Elsevier Inc. All rights reserved.

  16. Highly transparent front electrodes with metal fingers for p-i-n thin-film silicon solar cells

    Directory of Open Access Journals (Sweden)

    Moulin Etienne

    2015-01-01

    Full Text Available The optical and electrical properties of transparent conductive oxides (TCOs, traditionally used in thin-film silicon (TF-Si solar cells as front-electrode materials, are interlinked, such that an increase in TCO transparency is generally achieved at the cost of reduced lateral conductance. Combining a highly transparent TCO front electrode of moderate conductance with metal fingers to support charge collection is a well-established technique in wafer-based technologies or for TF-Si solar cells in the substrate (n-i-p configuration. Here, we extend this concept to TF-Si solar cells in the superstrate (p-i-n configuration. The metal fingers are used in conjunction with a millimeter-scale textured foil, attached to the glass superstrate, which provides an antireflective and retroreflective effect; the latter effect mitigates the shadowing losses induced by the metal fingers. As a result, a substantial increase in power conversion efficiency, from 8.7% to 9.1%, is achieved for 1-μm-thick microcrystalline silicon solar cells deposited on a highly transparent thermally treated aluminum-doped zinc oxide layer combined with silver fingers, compared to cells deposited on a state-of-the-art zinc oxide layer.

  17. Fabrication of Metallic Hollow Nanoparticles

    Science.gov (United States)

    Kim, Jae-Woo (Inventor); Choi, Sr., Sang H. (Inventor); Lillehei, Peter T. (Inventor); Chu, Sang-Hyon (Inventor); Park, Yeonjoon (Inventor); King, Glen C. (Inventor); Elliott, James R. (Inventor)

    2016-01-01

    Metal and semiconductor nanoshells, particularly transition metal nanoshells, are fabricated using dendrimer molecules. Metallic colloids, metallic ions or semiconductors are attached to amine groups on the dendrimer surface in stabilized solution for the surface seeding method and the surface seedless method, respectively. Subsequently, the process is repeated with additional metallic ions or semiconductor, a stabilizer, and NaBH.sub.4 to increase the wall thickness of the metallic or semiconductor lining on the dendrimer surface. Metallic or semiconductor ions are automatically reduced on the metallic or semiconductor nanoparticles causing the formation of hollow metallic or semiconductor nanoparticles. The void size of the formed hollow nanoparticles depends on the dendrimer generation. The thickness of the metallic or semiconductor thin film around the dendrimer depends on the repetition times and the size of initial metallic or semiconductor seeds.

  18. Effect of ballistic electrons on ultrafast thermomechanical responses of a thin metal film

    International Nuclear Information System (INIS)

    Xiong Qi-lin; Tian Xin

    2017-01-01

    The ultrafast thermomechanical coupling problem in a thin gold film irradiated by ultrashort laser pulses with different electron ballistic depths is investigated via the ultrafast thermoelasticity model. The solution of the problem is obtained by solving finite element governing equations. The comparison between the results of ultrafast thermomechanical coupling responses with different electron ballistic depths is made to show the ballistic electron effect. It is found that the ballistic electrons have a significant influence on the ultrafast thermomechanical coupling behaviors of the gold thin film and the best laser micromachining results can be achieved by choosing the specific laser technology (large or small ballistic range). In addition, the influence of simplification of the ultrashort laser pulse source on the results is studied, and it is found that the simplification has a great influence on the thermomechanical responses, which implies that care should be taken when the simplified form of the laser source term is applied as the Gaussian heat source. (paper)

  19. Adsorption smoke detector made of thin-film metal-oxide semiconductor sensor

    International Nuclear Information System (INIS)

    Adamian, A.Z.; Adamian, Z.N.; Aroutiounian, V.M.

    2001-01-01

    Based on results of investigations of the thin-film smoke sensors made of Bi 2 O 3 , irresponsive to a change in relative humidity of the environment, an absorption smoke detector processing circuit, where investigated sensor is used as a sensitive element, is proposed. It is shown that such smoke detector is able to function reliably under conditions of high relative humidity of the environment (up to 100%) and it considerably exceeds the known smoke detectors by the sensitivity threshold

  20. Adsorption smoke detector made of thin-film metal-oxide semiconductor sensor

    CERN Document Server

    Adamian, A Z; Aroutiounian, V M

    2001-01-01

    Based on results of investigations of the thin-film smoke sensors made of Bi sub 2 O sub 3 , irresponsive to a change in relative humidity of the environment, an absorption smoke detector processing circuit, where investigated sensor is used as a sensitive element, is proposed. It is shown that such smoke detector is able to function reliably under conditions of high relative humidity of the environment (up to 100%) and it considerably exceeds the known smoke detectors by the sensitivity threshold.

  1. Evaluation of diffusion barrier and electrical properties of tantalum oxynitride thin films for silver metallization

    International Nuclear Information System (INIS)

    Misra, E.; Wang, Y.; Theodore, N.D.; Alford, T.L.

    2004-01-01

    The thermal stability and the diffusion barrier properties of DC reactively sputtered tantalum oxynitride (Ta-O-N) thin films, between silver (Ag) and silicon (Si) p + n diodes were investigated. Both materials characterization (X-ray diffraction analysis, Rutherford backscattering spectrometry (RBS), Auger depth profiling) and electrical measurements (reverse-biased junction leakage current-density) were used to evaluate diffusion barrier properties of the thin films. The leakage current density of p + n diodes with the barrier (Ta-O-N) was approximately four orders of magnitude lower than those without barriers after a 30 min, 400 deg. C back contact anneal. The Ta-O-N barriers were stable up to 500 deg. C, 30 min anneals. However, this was not the case for the 600 deg. C anneal. RBS spectra and cross-sectional transmission electron microscopy of as-deposited and vacuum annealed samples of Ag/barrier (Ta-O-N)/Si indicate the absence of any interfacial interaction between the barrier and substrate (silicon). The failure of the Ta-O-N barriers has been attributed to thermally induced stresses, which cause the thin film to crack at elevated temperatures

  2. Directed self-assembly of nanoporous metallic- and bimetallic nanoparticle thin films

    Energy Technology Data Exchange (ETDEWEB)

    Pietsch, Torsten [Fachbereich Physik, Universitaet Konstanz (Germany); Gindy, Nabil; Fahmi, Amir [Department of Mechanical, Materials and Manufacturing Engineering, University of Nottingham (United Kingdom)

    2010-07-01

    Nanoporous thin films attracted considerable interest due to potential applications in optical coatings, catalysis, sensors as well as electronic devices. Recently, such films were prepared by post deposition treatments. The present study is focused on the fabrication of nanoporous thin films via directed self-assembly of hybrid materials. Due to the nature of this process no additional treatments are necessary to develop the pores. Hierarchical nanoporous structures are fabricated directly via deposition of polymer templated Au-nanoparticles onto hydrophilic substrates. These films exhibit two different pore diameters and a total pore density of more than 10{sup 10} holes per cm{sup 2}. Control over the pore size is achieved by changing the molecular weight of the PS-b-P4VP diblock copolymer. Moreover, the porous morphology is used as a template to fabricate bimetallic nanostructured thin films. Such well-defined nanostructures, not only exhibit unique physical properties but also provide control over the hydrophobicity of the coated surfaces.

  3. The effect of metallization contact resistance on the measurement of the field effect mobility of long-channel unannealed amorphous In–Zn–O thin film transistors

    International Nuclear Information System (INIS)

    Lee, Sunghwan; Park, Hongsik; Paine, David C.

    2012-01-01

    The effect of contact resistance on the measurement of the field effect mobility of compositionally homogeneous channel indium zinc oxide (IZO)/IZO metallization thin film transistors (TFTs) is reported. The TFTs studied in this work operate in depletion mode as n-channel field effect devices with a field effect mobility calculated in the linear regime (μ FE ) of 20 ± 1.9 cm 2 /Vs and similar of 18 ± 1.3 cm 2 /Vs when calculated in the saturation regime (μ FE sat ). These values, however, significantly underestimate the channel mobility since a large part of the applied drain voltage is dropped across the source/drain contact interface. The transmission line method was employed to characterize the contact resistance and it was found that the conducting-IZO/semiconducting-IZO channel contact is highly resistive (specific contact resistance, ρ C > 100 Ωcm 2 ) and, further, this contact resistance is modulated with applied gate voltage. Accounting for the contact resistance (which is large and modulated by gate voltage), the corrected μ FE is shown to be 39 ± 2.6 cm 2 /Vs which is consistent with Hall mobility measurements of high carrier density IZO.

  4. Electrical properties and transport mechanisms in phase change memory thin films of quasi-binary-line GeTe–Sb{sub 2}Te{sub 3} chalcogenide semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Sherchenkov, A. A. [National Research University of Electronic Technology (Russian Federation); Kozyukhin, S. A., E-mail: sergkoz@igic.ras.ru [Russian Academy of Sciences, Kurnakov Institute of General and Inorganic Chemistry (Russian Federation); Lazarenko, P. I.; Babich, A. V. [National Research University of Electronic Technology (Russian Federation); Bogoslovskiy, N. A. [Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation); Sagunova, I. V.; Redichev, E. N. [National Research University of Electronic Technology (Russian Federation)

    2017-02-15

    The temperature dependences of the resistivity and current–voltage (I–V) characteristics of phase change memory thin films based on quasi-binary-line GeTe–Sb{sub 2}Te{sub 3} chalcogenide semiconductors Ge{sub 2}Sb{sub 2}Te{sub 5}, GeSb{sub 2}Te{sub 5}, and GeSb{sub 4}Te{sub 7} are investigated. The effect of composition variation along the quasibinary line on the electrical properties and transport mechanisms of the thin films is studied. The existence of three ranges with different I–V characteristics is established. The position and concentration of energy levels controlling carrier transport are estimated. The results obtained show that the electrical properties of the thin films can significantly change during a shift along the quasi-binary line GeTe–Sb{sub 2}Te{sub 3}, which is important for targeted optimization of the phase change memory technology.

  5. Super-resolution imaging based on the temperature-dependent electron-phonon collision frequency effect of metal thin films

    Science.gov (United States)

    Ding, Chenliang; Wei, Jingsong; Xiao, Mufei

    2018-05-01

    We herein propose a far-field super-resolution imaging with metal thin films based on the temperature-dependent electron-phonon collision frequency effect. In the proposed method, neither fluorescence labeling nor any special properties are required for the samples. The 100 nm lands and 200 nm grooves on the Blu-ray disk substrates were clearly resolved and imaged through a laser scanning microscope of wavelength 405 nm. The spot size was approximately 0.80 μm , and the imaging resolution of 1/8 of the laser spot size was experimentally obtained. This work can be applied to the far-field super-resolution imaging of samples with neither fluorescence labeling nor any special properties.

  6. A system of two piezoelectric transducers and a storage circuit for wireless energy transmission through a thin metal wall.

    Science.gov (United States)

    Hu, Hongping; Hu, Yuantai; Chen, Chuanyao; Wang, Ji

    2008-10-01

    A system to wirelessly convey electric energy through a thin metal wall is proposed in the paper, where 2 piezoelectric transducers are used to realize energy transformation between electric and mechanical, and a rechargeable battery is employed to store the transmitted energy. To integrate them as a whole, an interface of a modulating circuit is applied between the transducer system and the storage battery. In addition, a synchronized switch harvesting on inductor in parallel with the transducer system is introduced to artificially extend the closed interval of the modulating circuit. The process of transmitting energy is computed, and the performance of the transducer system is optimized in detail for a prescribed external electric source. The results obtained are useful for understanding and designing wireless energy supply systems.

  7. Enhancement of photovoltaic properties of multicrystalline silicon solar cells by combination of buried metallic contacts and thin porous silicon

    Energy Technology Data Exchange (ETDEWEB)

    Ben Rabha, M.; Bessais, B. [Laboratoire de Photovoltaique, Centre de Recherches et des Technologies de l' Energie, Technopole de Borj-Cedria, BP 95, 2050 Hammam-Lif (Tunisia)

    2010-03-15

    Photovoltaic properties of buried metallic contacts (BMCs) with and without application of a front porous silicon (PS) layer on multicrystalline silicon (mc-Si) solar cells were investigated. A Chemical Vapor Etching (CVE) method was used to perform front PS layer and BMCs of mc-Si solar cells. Good electrical performance for the mc-Si solar cells was observed after combination of BMCs and thin PS films. As a result the current-voltage (I-V) characteristics and the internal quantum efficiency (IQE) were improved, and the effective minority carrier diffusion length (Ln) increases from 75 to 110 {mu}m after BMCs achievement. The reflectivity was reduced to 8% in the 450-950 nm wavelength range. This simple and low cost technology induces a 12% conversion efficiency (surface area = 3.2 cm{sup 2}). The obtained results indicate that the BMCs improve charge carrier collection while the PS layer passivates the front surface. (author)

  8. Low-temperature metal-oxide thin-film transistors formed by directly photopatternable and combustible solution synthesis.

    Science.gov (United States)

    Rim, You Seung; Lim, Hyun Soo; Kim, Hyun Jae

    2013-05-01

    We investigated the formation of ultraviolet (UV)-assisted directly patternable solution-processed oxide semiconductor films and successfully fabricated thin-film transistors (TFTs) based on these films. An InGaZnO (IGZO) solution that was modified chemically with benzoylacetone (BzAc), whose chelate rings decomposed via a π-π* transition as result of UV irradiation, was used for the direct patterning. A TFT was fabricated using the directly patterned IGZO film, and it had better electrical characteristics than those of conventional photoresist (PR)-patterned TFTs. In addition, the nitric acid (HNO3) and acetylacetone (AcAc) modified In2O3 (NAc-In2O3) solution exhibited both strong UV absorption and high exothermic reaction. This method not only resulted in the formation of a low-energy path because of the combustion of the chemically modified metal-oxide solution but also allowed for photoreaction-induced direct patterning at low temperatures.

  9. Separation of metals in the form of ion associates by the method of thin-layer chromatography

    International Nuclear Information System (INIS)

    Shapovalova, E.N.; Timerbaev, A.R.; Bol'shova, T.A.; Mel'nik, S.V.; Kordejro, E.

    1990-01-01

    Behaviour of pyridylazo resorcinates of certain metals (Ga, In, Fe, Co) in the form of ionic pairs with tri-n-octylamine (TOA) under conditions of thin-layer chromatography (TLC) has been studied. For all eluents investigated Ga and In complexes possess the highest mobility. Selectivity of ionic associate separation decreases with an increase in mobile phase polarity. Mixtures with 10-15 % content of isopropanol in eluating solution are the optimal ones. Separation of Ga and In from Fe 3+ and Co takes place with separation criterion 3.1 and 4.1 respectively. An attempt to separate ionic associates of In and Ga failed owing to similar stability of their pyridylazoresorcinates. Solution of the problem of In and Ga determination in the presence of iron can contribute to concrete application of the method

  10. Tests for depositing thin films of metallic zirconium; Essais de depot de zirconium metallique en couches minces

    Energy Technology Data Exchange (ETDEWEB)

    Bentolila, J.; Pattoret, A.; Platzer, R.

    1957-01-15

    The authors report a study which aimed at obtaining a thin, adhesive and non porous coating of metallic zirconium on a uranium substrate by means of chemical process. The main required condition was not to go beyond the uranium phase change temperature (650 C). Two kinds of tests have been performed: on the one hand, tests of reduction of zirconium tetrachloride in non aqueous solvent medium, and on the other hand, tests of vacuum decomposition of zirconium hydride. As far as the first tests are concerned, the authors studied organic solvent media (reduction by aluminium and lithium hydride, action of organic-magnesium compounds), and liquid ammoniac. For the second test type, they describe the apparatus, the preparation of the zirconium hydride, preparation of the substrate surfaces, coating preparation, and decomposition process. Results are discussed in terms of temperature, of presence of copper powder in the coating, of early surface hydriding of uranium, surface polishing.

  11. Electric-field-induced modification of the magnon energy, exchange interaction, and curie temperature of transition-metal thin films.

    Science.gov (United States)

    Oba, M; Nakamura, K; Akiyama, T; Ito, T; Weinert, M; Freeman, A J

    2015-03-13

    The electric-field-induced modification in the Curie temperature of prototypical transition-metal thin films with the perpendicular magnetic easy axis, a freestanding Fe(001) monolayer and a Co monolayer on Pt(111), is investigated by first-principles calculations of spin-spiral structures in an external electric field (E field). An applied E field is found to modify the magnon (spin-spiral formation) energy; the change arises from the E-field-induced screening charge density in the spin-spiral states due to p-d hybridizations. The Heisenberg exchange parameters obtained from the magnon energy suggest an E-field-induced modification of the Curie temperature, which is demonstrated via Monte Carlo simulations that take the magnetocrystalline anisotropy into account.

  12. Improved conductivity of infinite-layer LaNiO{sub 2} thin films by metal organic decomposition

    Energy Technology Data Exchange (ETDEWEB)

    Ikeda, Ai [Department of Applied Physics, Tokyo University of Agriculture and Technology, Naka-cho 2-24-16, Koganei, Tokyo 184-8588 (Japan); Research Fellow of the Japan Society for the Promotion of Science (Japan); Manabe, Takaaki [National Institute of Advanced Industrial Science and Technology (AIST), Higashi 1-1-1, Tsukuba, Ibaraki 305-8565 (Japan); Naito, Michio, E-mail: minaito@cc.tuat.ac.jp [Department of Applied Physics, Tokyo University of Agriculture and Technology, Naka-cho 2-24-16, Koganei, Tokyo 184-8588 (Japan)

    2013-12-15

    Highlights: •LaNiO{sub 2} films were synthesized by metal organic decomposition and topotactic reduction. •Room-temperature resistivity as low as 0.6 mΩ cm was achieved for infinite-layer LaNiO{sub 2}. •Lattice matched substrates are important in obtaining high conductivity. -- Abstract: Infinite-layer LaNiO{sub 2} thin films were synthesized by metal organic decomposition and subsequent topotactic reduction in hydrogen, and their transport properties were investigated. LaNiO{sub 2} is isostructural to SrCuO{sub 2}, the parent compound of high-T{sub c} Sr{sub 0.9}La{sub 0.1}CuO{sub 2} with T{sub c} = 44 K, and has 3d{sup 9} configuration, which is very rare in oxides but common to high-T{sub c} copper oxides. The bulk synthesis of LaNiO{sub 2} is not easy, but we demonstrate in this article that the thin-film synthesis of LaNiO{sub 2} is rather easy, thanks to a large-surface-to-volume ratio, which makes oxygen diffusion prompt. Our refined synthesis conditions produced highly conducting films of LaNiO{sub 2}. The resistivity of the best film is as low as 640 μΩ cm at 295 K and decreases with temperature down to 230 K but it shows a gradual upturn at lower temperatures.

  13. Fracture resistance of dental nickel-titanium rotary instruments with novel surface treatment: Thin film metallic glass coating.

    Science.gov (United States)

    Chi, Chih-Wen; Deng, Yu-Lun; Lee, Jyh-Wei; Lin, Chun-Pin

    2017-05-01

    Dental nickel-titanium (NiTi) rotary instruments are widely used in endodontic therapy because they are efficient with a higher success rate. However, an unpredictable fracture of instruments may happen due to the surface characteristics of imperfection (or irregularity). This study assessed whether a novel surface treatment could increase fatigue fracture resistance of dental NiTi rotary instruments. A 200- or 500-nm thick Ti-zirconium-boron (Ti-Zr-B) thin film metallic glass was deposited on ProTaper Universal F2 files using a physical vapor deposition process. The characteristics of coating were analyzed by scanning electron microscopy, transmission electron microscopy, and X-ray diffractometry. In cyclic fatigue tests, the files were performed in a simulated root canal (radius=5 mm, angulation=60°) under a rotating speed of 300rpm. The fatigue fractured cross sections of the files were analyzed with their fractographic performances through scanning electron microscopy images. The amorphous structure of the Ti-Zr-B coating was confirmed by transmission electron microscopy and X-ray diffractometry. The surface of treated files presented smooth morphologies without grinding irregularity. For the 200- and 500-nm surface treatment groups, the coated files exhibited higher resistance of cyclic fatigue than untreated files. In fractographic analysis, treated files showed significantly larger crack-initiation zone; however, no significant differences in the areas of fatigue propagation and catastrophic fracture were found compared to untreated files. The novel surface treatment of Ti-Zr-B thin film metallic glass on dental NiTi rotary files can effectively improve the fatigue fracture resistance by offering a smooth coated surface with amorphous microstructure. Copyright © 2016. Published by Elsevier B.V.

  14. Improved conductivity of infinite-layer LaNiO2 thin films by metal organic decomposition

    Science.gov (United States)

    Ikeda, Ai; Manabe, Takaaki; Naito, Michio

    2013-12-01

    Infinite-layer LaNiO2 thin films were synthesized by metal organic decomposition and subsequent topotactic reduction in hydrogen, and their transport properties were investigated. LaNiO2 is isostructural to SrCuO2, the parent compound of high-Tc Sr0.9La0.1CuO2 with Tc = 44 K, and has 3d9 configuration, which is very rare in oxides but common to high-Tc copper oxides. The bulk synthesis of LaNiO2 is not easy, but we demonstrate in this article that the thin-film synthesis of LaNiO2 is rather easy, thanks to a large-surface-to-volume ratio, which makes oxygen diffusion prompt. Our refined synthesis conditions produced highly conducting films of LaNiO2. The resistivity of the best film is as low as 640 μΩ cm at 295 K and decreases with temperature down to 230 K but it shows a gradual upturn at lower temperatures.

  15. Transport properties and pinning analysis for Co-doped BaFe2As2 thin films on metal tapes

    Science.gov (United States)

    Xu, Zhongtang; Yuan, Pusheng; Fan, Fan; Chen, Yimin; Ma, Yanwei

    2018-05-01

    We report on the transport properties and pinning analysis of BaFe1.84Co0.16As2 (Ba122:Co) thin films on metal tapes by pulsed laser deposition. The thin films exhibit a large in-plane misorientation of 5.6°, close to that of the buffer layer SrTiO3 (5.9°). Activation energy U 0(H) analysis reveals a power law relationship with field, having three different exponents at different field regions, indicative of variation from single-vortex pinning to a collective flux creep regime. The Ba122:Co coated conductors present {{T}{{c}}}{{onset}} = 20.2 K and {{T}{{c}}}{{zero}} = 19.0 K along with a self-field J c of 1.14 MA cm‑2 and an in-field J c as high as 0.98 and 0.86 MA cm‑2 up to 9 T at 4.2 K for both major crystallographic directions of the applied field, promising for high field applications. Pinning force analysis indicates a significant enhancement compared with similar Ba122:Co coated conductors. By using the anisotropic scaling approach, intrinsic pinning associated with coupling between superconducting blocks can be identified as the pinning source in the vicinity of H//ab, while for H//c random point defects are likely to play a role but correlated defects start to be active at high temperatures.

  16. Improved Plasticity of Ti-Based Bulk Metallic Glass at Room Temperature by Electroless Thin Nickel Coating

    Directory of Open Access Journals (Sweden)

    Xin Wang

    2017-12-01

    Full Text Available By restricting the dilated deformation, surface modification can stimulate multiple shear banding and improve the plasticity of bulk metallic glasses (BMGs. Aimed at modifying the surface of BMGs by thin layers, a crystalline Ni coating with ultrafine grains was coated on the surface of a Ti-based BMG by electroless plating. With a thickness of about 10 μm, the prepared thin coating could effectively limit the fast propagation of primary shear bands and stimulate the nucleation of multiple shear bands. As a result, the compression plasticity of the coated Ti-based BMG was improved to about 3.7% from near 0% of the non-coated BMG. Except for a small amount of Ni coating was adhered to the BMG substrate after fracture, most of the coatings were peeled off from the surface. It can be attributed to the abnormal growth of some coarse grains/particles in local region of the coating, which induces a large tensile stress at the interface between the coating and the BMG substrate. It is suggested that, for electroless nickel plating, improving the adhesive bonding strength between the coating and the substrate has a better geometric restriction effect than simply increasing the thickness of the coating.

  17. Excimer laser assisted re-oxidation of BaTiO3 thin films on Ni metal foils

    International Nuclear Information System (INIS)

    Bharadwaja, S. S. N.; Ko, S. W.; Qu, W.; Clark, T.; Rajashekhar, A.; Motyka, M.; Podraza, N.; Randall, C. A.; Trolier-McKinstry, S.

    2016-01-01

    Excimer laser assisted re-oxidation for reduced, crystallized BaTiO 3 thin films on Ni-foils was investigated. It was found that the BaTiO 3 can be re-oxidized at an oxygen partial pressure of ∼50 mTorr and substrate temperature of 350 °C without forming a NiO x interface layer between the film and base metal foil. The dielectric permittivity of re-oxidized films was >1000 with loss tangent values <2% at 100 Hz, 30 mV rms excitation signal. Electron Energy Loss Spectroscopy indicated that BaTiO 3 thin films can be re-oxidized to an oxygen stoichiometry close to ∼3 (e.g., stoichiometric). High resolution cross sectional transmission electron microscopy showed no evidence of NiO x formation between the BaTiO 3 and the Ni foil upon excimer laser re-oxidation. Spectroscopic ellipsometry studies on laser re-oxidized [001] C and [111] C BaTiO 3 single crystals indicate that the re-oxidation of BaTiO 3 single crystals is augmented by photo-excitation of the ozone, as well as laser pulse induced temperature and local stress gradients

  18. Metal-Organic Framework Thin Film Coated Optical Fiber Sensors: A Novel Waveguide-Based Chemical Sensing Platform.

    Science.gov (United States)

    Kim, Ki-Joong; Lu, Ping; Culp, Jeffrey T; Ohodnicki, Paul R

    2018-02-23

    Integration of optical fiber with sensitive thin films offers great potential for the realization of novel chemical sensing platforms. In this study, we present a simple design strategy and high performance of nanoporous metal-organic framework (MOF) based optical gas sensors, which enables detection of a wide range of concentrations of small molecules based upon extremely small differences in refractive indices as a function of analyte adsorption within the MOF framework. Thin and compact MOF films can be uniformly formed and tightly bound on the surface of etched optical fiber through a simple solution method which is critical for manufacturability of MOF-based sensor devices. The resulting sensors show high sensitivity/selectivity to CO 2 gas relative to other small gases (H 2 , N 2 , O 2 , and CO) with rapid (optical fiber platform which results in an amplification of inherent optical absorption present within the MOF-based sensing layer with increasing values of effective refractive index associated with adsorption of gases.

  19. Study of metal/ZnO based thin film ultraviolet photodetectors: The effect of induced charges on the dynamics of photoconductivity relaxation

    International Nuclear Information System (INIS)

    Yadav, Harish Kumar; Sreenivas, K.; Gupta, Vinay

    2010-01-01

    Ultraviolet photoconductivity relaxation in ZnO thin films deposited by rf magnetron sputtering are investigated. Effect of oxygen partial pressure in the reactive gas mixture and film thickness on the photoconductivity transients is studied. A different photodetector configuration comprising ZnO thin film with an ultrathin overlayer of metals like Cu, Al, Sn, Au, Cr, and Te was designed and tested. Photoresponse signal were found to be stronger (four to seven times) in these configurations than the pure ZnO thin films. Sn(30 nm)/ZnO sample exhibits highest responsivity of ∼8.57 kV/W whereas Te(20 nm)/ZnO structure presents highest sensitivity of ∼31.3x10 3 compared to unloaded ZnO thin film. Enhancement in the photoresponse of ZnO thin films is attributed to the change in surface conductivity due to induced charge carriers at the interface because of the difference in work function and oxygen affinity values of metal overlayer with the underlying semiconducting layer. Charge carrier transfer from the metal layer to ZnO creates a surplus of electrons at the interface; a fraction of which are captured by the defect centers (traps) at the surface whereas the remaining one represents free carriers in the conduction band and are responsible for the enhanced photoconductivity.

  20. Study of metal/ZnO based thin film ultraviolet photodetectors: The effect of induced charges on the dynamics of photoconductivity relaxation

    Science.gov (United States)

    Yadav, Harish Kumar; Sreenivas, K.; Gupta, Vinay

    2010-02-01

    Ultraviolet photoconductivity relaxation in ZnO thin films deposited by rf magnetron sputtering are investigated. Effect of oxygen partial pressure in the reactive gas mixture and film thickness on the photoconductivity transients is studied. A different photodetector configuration comprising ZnO thin film with an ultrathin overlayer of metals like Cu, Al, Sn, Au, Cr, and Te was designed and tested. Photoresponse signal were found to be stronger (four to seven times) in these configurations than the pure ZnO thin films. Sn(30 nm)/ZnO sample exhibits highest responsivity of ˜8.57 kV/W whereas Te(20 nm)/ZnO structure presents highest sensitivity of ˜31.3×103 compared to unloaded ZnO thin film. Enhancement in the photoresponse of ZnO thin films is attributed to the change in surface conductivity due to induced charge carriers at the interface because of the difference in work function and oxygen affinity values of metal overlayer with the underlying semiconducting layer. Charge carrier transfer from the metal layer to ZnO creates a surplus of electrons at the interface; a fraction of which are captured by the defect centers (traps) at the surface whereas the remaining one represents free carriers in the conduction band and are responsible for the enhanced photoconductivity.

  1. Cyclical Annealing Technique To Enhance Reliability of Amorphous Metal Oxide Thin Film Transistors.

    Science.gov (United States)

    Chen, Hong-Chih; Chang, Ting-Chang; Lai, Wei-Chih; Chen, Guan-Fu; Chen, Bo-Wei; Hung, Yu-Ju; Chang, Kuo-Jui; Cheng, Kai-Chung; Huang, Chen-Shuo; Chen, Kuo-Kuang; Lu, Hsueh-Hsing; Lin, Yu-Hsin

    2018-02-26

    This study introduces a cyclical annealing technique that enhances the reliability of amorphous indium-gallium-zinc-oxide (a-IGZO) via-type structure thin film transistors (TFTs). By utilizing this treatment, negative gate-bias illumination stress (NBIS)-induced instabilities can be effectively alleviated. The cyclical annealing provides several cooling steps, which are exothermic processes that can form stronger ionic bonds. An additional advantage is that the total annealing time is much shorter than when using conventional long-term annealing. With the use of cyclical annealing, the reliability of the a-IGZO can be effectively optimized, and the shorter process time can increase fabrication efficiency.

  2. Patterned Diblock Co-Polymer Thin Films as Templates for Advanced Anisotropic Metal Nanostructures.

    Science.gov (United States)

    Roth, Stephan V; Santoro, Gonzalo; Risch, Johannes F H; Yu, Shun; Schwartzkopf, Matthias; Boese, Torsten; Döhrmann, Ralph; Zhang, Peng; Besner, Bastian; Bremer, Philipp; Rukser, Dieter; Rübhausen, Michael A; Terrill, Nick J; Staniec, Paul A; Yao, Yuan; Metwalli, Ezzeldin; Müller-Buschbaum, Peter

    2015-06-17

    We demonstrate glancing-angle deposition of gold on a nanostructured diblock copolymer, namely polystyrene-block-poly(methyl methacrylate) thin film. Exploiting the selective wetting of gold on the polystyrene block, we are able to fabricate directional hierarchical structures. We prove the asymmetric growth of the gold nanoparticles and are able to extract the different growth laws by in situ scattering methods. The optical anisotropy of these hierarchical hybrid materials is further probed by angular resolved spectroscopic methods. This approach enables us to tailor functional hierarchical layers in nanodevices, such as nanoantennae arrays, organic photovoltaics, and sensor electronics.

  3. Electrochemical Synthesis of a Microporous Conductive Polymer Based on a Metal-Organic Framework Thin Film

    KAUST Repository

    Lu, Chunjing

    2014-05-22

    A new approach to preparing 3D microporous conductive polymer has been demonstrated in the electrochemical synthesis of a porous polyaniline network with the utilization of a MOF thin film supported on a conducting substrate. The prepared porous polyaniline with well-defined uniform micropores of 0.84 nm exhibits a high BET surface area of 986 m2 g−1 and a high electric conductivity of 0.125 S cm−1 when doped with I2, which is superior to existing porous conducting materials of porous MOFs, CMPs, and COFs.

  4. Metal ion reactive thin films using spray electrostatic LbL assembly.

    Science.gov (United States)

    Krogman, Kevin C; Lyon, Katharine F; Hammond, Paula T

    2008-11-20

    By using the spray-layer-by-layer (Spray-LbL) technique, the number of metal counterions trapped within LbL coatings is significantly increased by kinetically freezing the film short of equilibrium, potentially limiting interchain penetration and forcing chains to remain extrinsically compensated to a much greater degree than observed in the traditional dipped LbL technique. The basis for the enhanced entrapment of metal ions such as Cu2+, Fe2+, and Ag+ is addressed, including the equilibrium driving force for extrinsic compensation by soft versus hard metal ions and the impact of Spray-LbL on the kinetics of polymer-ion complexation. These polymer-bound metal-ion coatings are also demonstrated to be effective treatments for air filtration, functionalizing existing filters with the ability to strongly bind toxic industrial compounds such as ammonia or cyanide gases, as well as chemical warfare agent simulants such as chloroethyl ethyl sulfide. On the basis of results reported here, future work could extend this method to include other toxic soft-base ligands such as carbon monoxide, benzene, or organophosphate nerve agents.

  5. Use of cermet thin film resistors with nitride passivated metal insulator field effect transistor

    Science.gov (United States)

    Brown, G. A.; Harrap, V.

    1971-01-01

    Film deposition of cermet resistors on same chip with metal nitride oxide silicon field effect transistors permits protection of contamination sensitive active devices from contaminants produced in cermet deposition and definition processes. Additional advantages include lower cost, greater reliability, and space savings.

  6. Topotactic Metal-Insulator Transition in Epitaxial SrFeO x Thin Films

    International Nuclear Information System (INIS)

    Khare, Amit; Shin, Dongwon; Yoo, Tae Sup; Kim, Minu; Kang, Tae Dong

    2017-01-01

    Multivalent transition metal oxides provide fascinating and rich physics related to oxygen stoichiometry. In particular, the adoptability of various valence states of transition metals enables perovskite oxides to display mixed (oxygen) ionic and electronic conduction and catalytic activity useful in many practical applications, including solid-oxide fuel cells (SOFCs), rechargeable batteries, gas sensors, and memristive devices. For proper realization of the ionic conduction and catalytic activity, it is essential to understand the reversible oxidation and reduction process, which is governed by oxygen storage/release steps in oxides. Topotactic phase transformation facilitates the redox process in perovskites with specific oxygen vacancy ordering by largely varying the oxygen concentration of a material without losing the lattice framework. The concentration and diffusion of oxide ions (O 2– ), the valence state of the transition metal cations, and the thermodynamic structural integrity together provide fundamental understanding and ways to explicitly control the redox reaction.[6] In addition, it offers an attractive route for tuning the emergent physical properties of transition metal oxides, via strong coupling between the crystal lattice and electronic structure.

  7. Features of the mechanoluminescence of thin metal films, excited by short and long laser pulses

    International Nuclear Information System (INIS)

    Banishev, A.F.; Panchenko, V.Ya.; Shishkov, A.V.

    2004-01-01

    The results of the study on the deformation-induced luminescence of the fine grain metal films, originating by the impact of the short (submicrosecond) and long (millisecond) laser pulses, are presented. The supposition os made relative to the luminescence excitation mechanism [ru

  8. Atomic layer deposited nanocrystalline tungsten carbides thin films as a metal gate and diffusion barrier for Cu metallization

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Jun Beom; Kim, Soo-Hyun, E-mail: soohyun@ynu.ac.kr [School of Materials Science and Engineering, Yeungnam University, Gyeongsan-si 712-749 (Korea, Republic of); Han, Won Seok [UP Chemical 576, Chilgoedong, Pyeongtaek-si, Gyeonggi-do 459-050 (Korea, Republic of); Lee, Do-Joong [School of Engineering, Brown University, Providence, Rhode Island 02912 (United States)

    2016-07-15

    Tungsten carbides (WC{sub x}) thin films were deposited on thermally grown SiO{sub 2} substrates by atomic layer deposition (ALD) using a fluorine- and nitrogen-free W metallorganic precursor, tungsten tris(3-hexyne) carbonyl [W(CO)(CH{sub 3}CH{sub 2}C ≡ CCH{sub 2}CH{sub 3}){sub 3}], and N{sub 2} + H{sub 2} plasma as the reactant at deposition temperatures between 150 and 350 °C. The present ALD-WC{sub x} system showed an ALD temperature window between 200 and 250 °C, where the growth rate was independent of the deposition temperature. Typical ALD characteristics, such as self-limited film growth and a linear dependency of the film grown on the number of ALD cycles, were observed, with a growth rate of 0.052 nm/cycle at a deposition temperature of 250 °C. The ALD-WC{sub x} films formed a nanocrystalline structure with grains, ∼2 nm in size, which consisted of hexagonal W{sub 2}C, WC, and nonstoichiometric cubic β-WC{sub 1−x} phase. Under typical deposition conditions at 250 °C, an ALD-WC{sub x} film with a resistivity of ∼510 μΩ cm was deposited and the resistivity of the ALD-WC{sub x} film could be reduced even further to ∼285 μΩ cm by further optimizing the reactant pulsing conditions, such as the plasma power. The step coverage of ALD-WC{sub x} film was ∼80% on very small sized and dual trenched structures (bottom width of 15 nm and aspect ratio of ∼6.3). From ultraviolet photoelectron spectroscopy, the work function of the ALD-WC{sub x} film was determined to be 4.63 eV. Finally, the ultrathin (∼5 nm) ALD-WC{sub x} film blocked the diffusion of Cu, even up to 600 °C, which makes it a promising a diffusion barrier material for Cu interconnects.

  9. Fabrication and non-covalent modification of highly oriented thin films of a zeolite-like metal-organic framework (ZMOF) with rho topology

    KAUST Repository

    Shekhah, Osama; Cadiau, Amandine; Eddaoudi, Mohamed

    2015-01-01

    Here we report the fabrication of the first thin film of a zeolite-like metal-organic framework (ZMOF) with rho topology (rho-ZMOF-1, ([In48(HImDC)96]48-)n) in a highly oriented fashion on a gold-functionalized substrate. The oriented rho-ZMOF-1

  10. Simultaneous measurement of trace metal and oxyanion concentrations in water using diffusive gradients in thin films with a chelex-metsorb mixed binding layer

    DEFF Research Database (Denmark)

    Panther, Jared G.; Bennett, William W.; Welsh, David T.

    2014-01-01

    A new diffusive gradients in thin films (DGT) technique with a mixed binding layer (Chelex-100 and the titanium dioxide based adsorbent Metsorb) is described for the simultaneous measurement of labile trace metal (Mn, Co, Ni, Cu, Cd, and Pb) and oxyanion (V, As, Mo, Sb, W, and P) concentrations i...

  11. Suppression of dewetting phenomena during excimer laser melting of thin metal films on SiO2

    International Nuclear Information System (INIS)

    Kline, J.E.; Leonard, J.P.

    2005-01-01

    Pulsed excimer laser irradiation has been used to fully melt 200 nm films of elemental Au and Ni on SiO 2 substrates. With the use of a capping layer of SiO 2 and line irradiation via projection optics, the typical liquid-phase dewetting processes associated with these metals on SiO 2 has been suppressed. In a series of experiments varying line widths and fluence, a process region is revealed immediately above the complete melting threshold for which the films remain continuous and smooth after melting and resolidification. Simple energetic arguments for mechanisms leading to initiation of dewetting support these observations, and a gas-mediated model is proposed to describe the process conditions that are necessary for the suppression of dewetting

  12. Electrochemical Water Oxidation by a Catalyst-Modified Metal-Organic Framework Thin Film

    Energy Technology Data Exchange (ETDEWEB)

    Lin, Shaoyang; Pineda-Galvan, Yuliana; Maza, William A.; Epley, Charity C.; Zhu, Jie; Kessinger, Matthew C.; Pushkar, Yulia; Morris, Amanda J. (VP); (Purdue)

    2016-12-15

    Water oxidation, a key component in artificial photosynthesis, requires high overpotentials and exhibits slow reaction kinetics that necessitates the use of stable and efficient heterogeneous water-oxidation catalysts (WOCs). Here, we report the synthesis of UiO-67 metal–organic framework (MOF) thin films doped with [Ru(tpy)(dcbpy)OH2]2+ (tpy=2,2':6',2''-terpyridine, dcbpy=5,5'-dicarboxy-2,2'-bipyridine) on conducting surfaces and their propensity for electrochemical water oxidation. The electrocatalyst oxidized water with a turnover frequency (TOF) of (0.2±0.1) s-1 at 1.71 V versus the normal hydrogen electrode (NHE) in buffered solution (pH~7) and exhibited structural and electrochemical stability. The electroactive sites were distributed throughout the MOF thin film on the basis of scan-ratedependent voltammetry studies. This work demonstrates a promising way to immobilize large concentrations of electroactive WOCs into a highly robust MOF scaffold and paves the way for future photoelectrochemical water-splitting systems.

  13. Thin sensing layer based on semi-conducting β-cyclodextrin rotaxane for toxic metals detection

    Energy Technology Data Exchange (ETDEWEB)

    Teka, S.; Gaied, A.; Jaballah, N. [Laboratoire des Interfaces et Matériaux Avancés (LIMA), Université de Monastir, Faculté des Sciences de Monastir, Bd. de l' Environnement, 5019 Monastir (Tunisia); Xiaonan, S. [Université Paris Diderot, Sorbonne Paris Cité, ITODYS, UMR 7086 CNRS, 15 rue J-A de Baı̈ f, 75205 Paris Cedex 13 (France); Majdoub, M., E-mail: mustapha.majdoub@fsm.rnu.tn [Laboratoire des Interfaces et Matériaux Avancés (LIMA), Université de Monastir, Faculté des Sciences de Monastir, Bd. de l' Environnement, 5019 Monastir (Tunisia)

    2016-02-15

    Highlights: • Microwave-assisted synthesis of rotaxane based on anthracene and β-cyclodextrin. • Morphological and optical characterization of thin solid film. • Elaboration of impedimetric gold/rotaxane sensor. • Investigation of the membrane sensitivity towards Hg{sup 2+}, Cu{sup 2+} and Pb{sup 2+} cations. - Abstract: An impedimetric sensor based on a new semi-conducting rotaxane has been described for detection of toxic cations. The rotaxane, consists on a π-conjugated material encapsulated into β-cyclodextrin (β-CD); it has been synthesized via the Williamson reaction under microwaves irradiation. The supramolecular structure of the compound was confirmed by NMR and FT-IR spectroscopies. A thin solid film of the rotaxane was deposited by spin-coating to develop a new electrochemical sensor. The morphological properties of the organic membrane were evaluated using contact angle measurements and atomic force microscopy. The gold/rotaxane/solution interfaces were investigated by electrochemical impedance spectroscopy and the obtained data were fitted using an equivalent electrical circuit. The response of the gold/rotaxane membrane towards Hg{sup 2+}, Cu{sup 2+} and Pb{sup 2+} cations was studied and the results showed a good sensitivity to the mercury cations.

  14. Simulation of transformations of thin metal films heated by nanosecond laser pulses

    Science.gov (United States)

    Balandin, V. Yu.; Niedrig, R.; Bostanjoglo, O.

    1995-01-01

    The ablation of free-standing thin aluminum films by a nanosecond laser pulse was investigated by time-resolved transmission electron microscopy and numerical simulation. It was established that thin film geometry is particularly suited to furnish information on the mechanism of evaporation and the surface tension of the melt. In the case of aluminum the surface tension sigma as function of temperature can be approximated by two linear sections with a coefficient -0.3 x 10(exp -3) N/K m from the melting point 933 K up to 3000 K and -0.02 x 10(exp -3) N/K m above 3000 K, respectively, with sigma(993 K) = 0.9 N/m and sigma(8500 K) = 0. At lower pulse energies the films disintegrated predominantly by thermocapillary flow. Higher pulse energies produced volume evaporation, and a nonmonotonous flow, explained by recoil from evaporating atoms and thermocapillarity. The familiar equations of energy and motion, which presuppose separate and coherent vapor and liquid phases, were not adequate to describe the ablation of the hottest zone. Surface evaporation seemed to be marginal at all laser pulse energies used.

  15. Modeling of metal thin film growth: Linking angstrom-scale molecular dynamics results to micron-scale film topographies

    Science.gov (United States)

    Hansen, U.; Rodgers, S.; Jensen, K. F.

    2000-07-01

    A general method for modeling ionized physical vapor deposition is presented. As an example, the method is applied to growth of an aluminum film in the presence of an ionized argon flux. Molecular dynamics techniques are used to examine the surface adsorption, reflection, and sputter reactions taking place during ionized physical vapor deposition. We predict their relative probabilities and discuss their dependence on energy and incident angle. Subsequently, we combine the information obtained from molecular dynamics with a line of sight transport model in a two-dimensional feature, incorporating all effects of reemission and resputtering. This provides a complete growth rate model that allows inclusion of energy- and angular-dependent reaction rates. Finally, a level-set approach is used to describe the morphology of the growing film. We thus arrive at a computationally highly efficient and accurate scheme to model the growth of thin films. We demonstrate the capabilities of the model predicting the major differences on Al film topographies between conventional and ionized sputter deposition techniques studying thin film growth under ionized physical vapor deposition conditions with different Ar fluxes.

  16. Process Development And Simulation For Cold Fabrication Of Doubly Curved Metal Plate By Using Line Array Roll Set

    International Nuclear Information System (INIS)

    Shim, D. S.; Jung, C. G.; Seong, D. Y.; Yang, D. Y.; Han, J. M.; Han, M. S.

    2007-01-01

    For effective manufacturing of a doubly curved sheet metal, a novel sheet metal forming process is proposed. The suggested process uses a Line Array Roll Set (LARS) composed of a pair of upper and lower roll assemblies in a symmetric manner. The process offers flexibility as compared with the conventional manufacturing processes, because it does not require any complex-shaped die and loss of material by blank-holding is minimized. LARS allows flexibility of the incremental forming process and adopts the principle of bending deformation, resulting in a slight deformation in thickness. Rolls composed of line array roll sets are divided into a driving roll row and two idle roll rows. The arrayed rolls in the central lines of the upper and lower roll assemblies are motor-driven so that they deform and transfer the sheet metal using friction between the rolls and the sheet metal. The remaining rolls are idle rolls, generating bending deformation with driving rolls. Furthermore, all the rolls are movable in any direction so that they are adaptable to any size or shape of the desired three-dimensional configuration. In the process, the sheet is deformed incrementally as deformation proceeds simultaneously in rolling and transverse directions step by step. Consequently, it can be applied to the fabrication of doubly curved ship hull plates by undergoing several passes. In this work, FEM simulations are carried out for verification of the proposed incremental forming system using the chosen design parameters. Based on the results of the simulation, the relationship between the roll set configuration and the curvature of a sheet metal is determined. The process information such as the forming loads and torques acting on every roll is analyzed as important data for the design and development of the manufacturing system

  17. Preparation of titanium oxide and metal titanates as powders, thin films, and microspheres by complex sol-gel process

    International Nuclear Information System (INIS)

    Deptula, A.; Olczak, T.; Lada, W.; Chmielewski, A.G.; Jakubaszek, U.; Sartowska, B.; Goretta, K.C.; Alvani, C.; Casadio, S.; Contini, V.

    2006-01-01

    Titanium oxide, for many years an important pigment, has recently been applied widely as a photocatalyst or as supports for metallic catalysts, gas sensors, photovoltaic solar cells, and water and air purification devices. Titanium oxide (TiO 2 ) and titanates based on Ba, Sr and Ca were prepared from commercial solutions of TiCl 4 and HNO 3 . The main preparation steps for the sols consisted of elimination of Cl - by distillation with HNO 3 and addition of metal hydroxides for the titanates. Resulting sols were gelled and used to: (a) prepare irregularly shaped powders by evaporation; (b) produce by a dipping technique thin films on glass, Ag or Ti supports; (c) produce spherical powders (diameters <100 μm) by solvent extraction. Results of thermal and X-ray-diffraction analyses indicated that the temperatures required to form the various compounds were lower than those necessary to form the compounds by conventional solid-state reactions and comparable to those required with use of organometallic based sol-gel methods. Temperatures of formation could be further reduced by addition of ascorbic acid (ASC) to the sols

  18. Study of 'liquid gold' coatings: Thermal decomposition and formation of metallic thin films

    Energy Technology Data Exchange (ETDEWEB)

    Deram, V. [Laboratoire de Spectrochimie Infrarouge et Raman, Universite des Sciences et Technologies de Lille, UMR CNRS 8516, Bat C5 - 59655 Villeneuve d' Ascq (France) and Ecole Nationale Superieure des Mines de Paris, Centre de Mise en Forme des Materiaux, UMR CNRS 7635, BP 207, 06904 Sophia-Antipolis (France)]. E-mail: virginie.deram@ensmp.fr; Turrell, S. [Laboratoire de Spectrochimie Infrarouge et Raman, Universite des Sciences et Technologies de Lille, UMR CNRS 8516, Bat C5 - 59655 Villeneuve d' Ascq (France); Darque-Ceretti, E. [Ecole Nationale Superieure des Mines de Paris, Centre de Mise en Forme des Materiaux, UMR CNRS 7635, BP 207, 06904 Sophia-Antipolis (France); Aucouturier, M. [Centre de Recherche et de Restauration des Musees de France, UMR CNRS 171, Palais du Louvre, Porte des Lions, 14 quai F. Mitterrand, 75001 Paris Cedex (France)

    2006-09-25

    Organo-metallic solutions called liquid gold are largely used to obtain thin gilded films which are employed for decorative, technological and functional uses. However, these films often prove to be fragile with respect to use, resulting in loss of brilliance or even eventual film removal. An understanding of the behaviour of the layers requires good knowledge of the materials themselves. The present work was undertaken to better understand the evolution of the structural properties of liquid gold as it undergoes heat-processing. Accordingly, we followed the thermal decomposition processes of liquid gold coatings and the formation of the gilded metal layer using a combination of experimental techniques. First, thermal analyses coupled with mass spectrometry and infrared spectroscopy gave information concerning the decomposition of the organic medium. It has been found that the process of film formation can be decomposed into three steps, the second of which is an abrupt transition between 300 and 350 deg. C. Details on this transition have been obtained using real-time X-ray Diffraction and Rutherford Backscattering Spectrometry. Above 350 deg. C, the microstructure of the coating is reorganized to obtain a final layer which contains particles, of the size of a few hundreds nanometers, as shown by Transmission Electron Microscopy.

  19. Semiconductor to metallic transition in bulk accumulated amorphous indium-gallium-zinc-oxide dual gate thin-film transistor

    Directory of Open Access Journals (Sweden)

    Minkyu Chun

    2015-05-01

    Full Text Available We investigated the effects of top gate voltage (VTG and temperature (in the range of 25 to 70 oC on dual-gate (DG back-channel-etched (BCE amorphous-indium-gallium-zinc-oxide (a-IGZO thin film transistors (TFTs characteristics. The increment of VTG from -20V to +20V, decreases the threshold voltage (VTH from 19.6V to 3.8V and increases the electron density to 8.8 x 1018cm−3. Temperature dependent field-effect mobility in saturation regime, extracted from bottom gate sweep, show a critical dependency on VTG. At VTG of 20V, the mobility decreases from 19.1 to 15.4 cm2/V ⋅ s with increasing temperature, showing a metallic conduction. On the other hand, at VTG of - 20V, the mobility increases from 6.4 to 7.5cm2/V ⋅ s with increasing temperature. Since the top gate bias controls the position of Fermi level, the temperature dependent mobility shows metallic conduction when the Fermi level is above the conduction band edge, by applying high positive bias to the top gate.

  20. Semiconductor to metallic transition in bulk accumulated amorphous indium-gallium-zinc-oxide dual gate thin-film transistor

    Energy Technology Data Exchange (ETDEWEB)

    Chun, Minkyu; Chowdhury, Md Delwar Hossain; Jang, Jin, E-mail: jjang@khu.ac.kr [Advanced Display Research Center and Department of Information Display, Kyung Hee University, Seoul 130-701 (Korea, Republic of)

    2015-05-15

    We investigated the effects of top gate voltage (V{sub TG}) and temperature (in the range of 25 to 70 {sup o}C) on dual-gate (DG) back-channel-etched (BCE) amorphous-indium-gallium-zinc-oxide (a-IGZO) thin film transistors (TFTs) characteristics. The increment of V{sub TG} from -20V to +20V, decreases the threshold voltage (V{sub TH}) from 19.6V to 3.8V and increases the electron density to 8.8 x 10{sup 18}cm{sup −3}. Temperature dependent field-effect mobility in saturation regime, extracted from bottom gate sweep, show a critical dependency on V{sub TG}. At V{sub TG} of 20V, the mobility decreases from 19.1 to 15.4 cm{sup 2}/V ⋅ s with increasing temperature, showing a metallic conduction. On the other hand, at V{sub TG} of - 20V, the mobility increases from 6.4 to 7.5cm{sup 2}/V ⋅ s with increasing temperature. Since the top gate bias controls the position of Fermi level, the temperature dependent mobility shows metallic conduction when the Fermi level is above the conduction band edge, by applying high positive bias to the top gate.

  1. Numerical and experimental modeling of liquid metal thin film flows in a quasi-coplanar magentic field

    Energy Technology Data Exchange (ETDEWEB)

    Morley, Neil B. [Univ. of California, Los Angeles, CA (United States)

    1994-01-01

    Liquid metal film protection of plasma-facing surfaces in fusion reactors is proposed in an effort to counter the adverse effects of high heat and particle fluxes from the burning plasma. Concerns still exist about establishing the required flow in presence of strong magnetic fields and plasma momentum flux typical of a reactor environment. In this work, the flow behavior of the film is examined under such conditions. Analysis of MHD equations as they apply to liquid metal flows with a free surface in the fully-developed limit was undertaken. Solution yields data for velocity profiles and uniform film heights vs key design parameters (channel size, magnetic field magnitude/orientation, channel slope, wall conductivity). These results are compared to previous models to determine accuracy of simplifying assumptions, in particular Hartmann averaging of films along {rvec B}. Effect of a plasma momentum flux on the thin films is also analyzed. The plasma momentum is strong enough in the cases examined to seriously upset the film, especially for lighter elements like Li. Ga performed much better and its possible use is bolstered by calculations. In an experiment in the MeGA-loop MHD facility, coplanar, wide film flow was found to be little affected by the magnetic field due to the elongated nature of the film. Both MHD drag and partial laminarization are observed, supporting the fully- developed film model predictions of the onset of MHD drag and duct flow estimations for flow laminarization.

  2. Visible tunable lighting system based on polymer composites embedding ZnO and metallic clusters: from colloids to thin films

    Science.gov (United States)

    Truong, Thai Giang; Dierre, Benjamin; Grasset, Fabien; Saito, Noriko; Saito, Norio; Nguyen, Thi Kim Ngan; Takahashi, Kohsei; Uchikoshi, Tetsuo; Amela-Cortes, Marian; Molard, Yann; Cordier, Stéphane; Ohashi, Naoki

    2016-01-01

    The development of phosphor devices free of heavy metal or rare earth elements is an important issue for environmental reasons and energy efficiency. Different mixtures of ZnO nanocrystals with Cs2Mo6I8(OOC2F5)6 cluster compound (CMIF) dispersed into polyvinylpyrrolidone matrix have been prepared by very simple and low cost solution chemistry. The resulting solutions have been used to fabricate highly transparent and luminescent films by dip coating free of heavy metal or rare earth elements. The luminescence properties of solution and dip-coated films were investigated. The luminescence of such a system is strongly dependent on the ratios between ZnO and CMIF amounts, the excitation wavelength and the nature of the system. By varying these two parameters (ratio and wavelength), a large variety of colors, from blue to red as well as white, can be achieved. In addition, differences in the luminescence properties have been observed between solutions and thin films as well as changes of CMIF emission band maximum wavelength. This may suggest some possible interactions between the different luminophore centers, such as energy transfer or ligands exchange on the Mo6 clusters.

  3. Numerical and experimental modeling of liquid metal thin film flows in a quasi-coplanar magentic field

    International Nuclear Information System (INIS)

    Morley, N.B.

    1994-01-01

    Liquid metal film protection of plasma-facing surfaces in fusion reactors is proposed in an effort to counter the adverse effects of high heat and particle fluxes from the burning plasma. Concerns still exist about establishing the required flow in presence of strong magnetic fields and plasma momentum flux typical of a reactor environment. In this work, the flow behavior of the film is examined under such conditions. Analysis of MHD equations as they apply to liquid metal flows with a free surface in the fully-developed limit was undertaken. Solution yields data for velocity profiles and uniform film heights vs key design parameters (channel size, magnetic field magnitude/orientation, channel slope, wall conductivity). These results are compared to previous models to determine accuracy of simplifying assumptions, in particular Hartmann averaging of films along rvec B. Effect of a plasma momentum flux on the thin films is also analyzed. The plasma momentum is strong enough in the cases examined to seriously upset the film, especially for lighter elements like Li. Ga performed much better and its possible use is bolstered by calculations. In an experiment in the MeGA-loop MHD facility, coplanar, wide film flow was found to be little affected by the magnetic field due to the elongated nature of the film. Both MHD drag and partial laminarization are observed, supporting the fully- developed film model predictions of the onset of MHD drag and duct flow estimations for flow laminarization

  4. Recent progress in high performance and reliable n-type transition metal oxide-based thin film transistors

    International Nuclear Information System (INIS)

    Yeon Kwon, Jang; Kyeong Jeong, Jae

    2015-01-01

    This review gives an overview of the recent progress in vacuum-based n-type transition metal oxide (TMO) thin film transistors (TFTs). Several excellent review papers regarding metal oxide TFTs in terms of fundamental electron structure, device process and reliability have been published. In particular, the required field-effect mobility of TMO TFTs has been increasing rapidly to meet the demands of the ultra-high-resolution, large panel size and three dimensional visual effects as a megatrend of flat panel displays, such as liquid crystal displays, organic light emitting diodes and flexible displays. In this regard, the effects of the TMO composition on the performance of the resulting oxide TFTs has been reviewed, and classified into binary, ternary and quaternary composition systems. In addition, the new strategic approaches including zinc oxynitride materials, double channel structures, and composite structures have been proposed recently, and were not covered in detail in previous review papers. Special attention is given to the advanced device architecture of TMO TFTs, such as back-channel-etch and self-aligned coplanar structure, which is a key technology because of their advantages including low cost fabrication, high driving speed and unwanted visual artifact-free high quality imaging. The integration process and related issues, such as etching, post treatment, low ohmic contact and Cu interconnection, required for realizing these advanced architectures are also discussed. (invited review)

  5. Line profile analyses of rhodium metal obtained by decomposition of rhodium carbonyl

    International Nuclear Information System (INIS)

    Chandra, D.; Mandalia, H.; Garner, M.L.; Blakely, M.K.; Lau, K.H.

    1995-01-01

    Metal carbonyls are important for chemical vapor deposition (CVD) of metals and alloys and formation of high surface area metallic particles which have potential applications as catalysts. Rhodium carbonyl [Rh 6 (CO) 16 ] produces high surface area metallic particles whose structure has been reported as monoclinic (I2/a) with lattice dimensions, a=17.00(±0.03)Angstrom, b=9.78(±0.02)Angstrom, c=17.53(±0.03)Angstrom and Β=121 degrees 45' ± 30' at room temperature. Generally, metal carbonyl crystals dissociate under vacuum as carbonyl gas and decompose to metallic crystals and carbon monoxide at higher temperatures. However, the behavior of rhodium carbonyl crystals is different; they decompose directly to metallic rhodium without the formation of rhodium carbonyl gas in vacuum. Several residual fine grains of rhodium metal are found after the decomposition in vacuum at relatively low temperatures. The metallic samples of rhodium were obtained from vapor pressure experiments using torsion Knudsen-effusion apparatus. X-ray diffraction analyses performed on these gains showed severely broadened Bragg reflections indicative of small particle size and/or lattice microgram. In this study, a comparison of lattice strains and domain sizes obtained by integral breadth and Fourier methods has been made. In addition a comparison of the lattice strains and domain sizes has been made between the Cauchy, Gaussian, Cauchy-Gaussian and Aqua integral breadth methods

  6. Possible stibnite transformation at the friction surface of the semi-metallic friction composites designed for car brake linings

    Science.gov (United States)

    Matějka, V.; Lu, Y.; Matějková, P.; Smetana, B.; Kukutschová, J.; Vaculík, M.; Tomášek, V.; Zlá, S.; Fan, Y.

    2011-12-01

    After a friction process several changes in phase composition of friction composites are often registered. High temperature, accompanied by high pressure induced during braking can cause initiation of chemical reactions which do not run at room or elevated temperatures under the atmospheric pressure. Most of the studies in the field of tribochemistry at friction surfaces of automotive semi-metallic brake linings deal with phenolic resin degradation and corrosion of metallic components. The paper addresses the formation of elemental antimony as well as the alloying process of iron with antimony observed on the surface of laboratory prepared semi-metallic friction composites containing stibnite. The role of alumina abrasives in the process of stibnite transformation is also discussed and mechanism of stibnite transformation was outlined.

  7. Morphological and structural characterizations of dendrimer-mediated metallic Ti and Al thin film nanocomposites

    Energy Technology Data Exchange (ETDEWEB)

    Curry, M. [Center for Materials for Information Technology, University of Alabama, Tuscaloosa, AL 35487-0209 (United States); Department of Chemistry, University of Alabama, Tuscaloosa, AL 35487-0209 (United States); Li, X. [Center for Materials for Information Technology, University of Alabama, Tuscaloosa, AL 35487-0209 (United States); Department of Metallurgical and Materials Science and Engineering, University of Alabama, Tuscaloosa, AL 35487-0209 (United States); Zhang, J. [Center for Materials for Information Technology, University of Alabama, Tuscaloosa, AL 35487-0209 (United States); Department of Chemistry, University of Alabama, Tuscaloosa, AL 35487-0209 (United States); Weaver, M.L. [Center for Materials for Information Technology, University of Alabama, Tuscaloosa, AL 35487-0209 (United States); Department of Metallurgical and Materials Science and Engineering, University of Alabama, Tuscaloosa, AL 35487-0209 (United States); Street, S.C. [Center for Materials for Information Technology, University of Alabama, Tuscaloosa, AL 35487-0209 (United States) and Department of Chemistry, University of Alabama, Tuscaloosa, AL 35487-0209 (United States)]. E-mail: sstreet@bama.ua.edu

    2007-02-26

    Evidence is presented here for significant influence on the surface topography of Ti and Al films in the presence of poly(amidoamine) dendrimer monolayers [generations G(4-8)] on SiO {sub x}. X-ray photoelectron spectroscopy analysis clearly indicates formation of nitrides and carbides for Ti metal grown on dendrimer monolayers. In addition, obvious trends in measured correlation lengths and crystalline growth modes of Ti films indicate grain sizes tracking the intrinsic roughness of dendrimer monolayers. No formation of metal nitride is observed for Al depositions. Atomic force microscopy analyses show significant changes in rms vertical roughness and aggregation of as-deposited Ti or Al in presence of dendrimer monolayers.

  8. 12-inch x-ray image intensifier with thin metal input window

    Energy Technology Data Exchange (ETDEWEB)

    Obata, Yoshiharu; Anno, Hidero; Harao, Norio [Toshiba Corp., Kawasaki, Kanagawa (Japan)

    1982-08-01

    Borosilicate glass has been used for X-ray input window of image intensifiers (I.I.) up to now. Now two new types of 12-inch metal I.I., RT12301C and RT12302C, have been developed. They use convex 1-mm aluminum (instead of 5-mm borosilicate glass) for the input window. Adopting a high-performance penta-electronic lens and a new type of light guide CsI film, these intensifiers have greatly improved contrast, quantum detection efficiency (QDE) and resolution capability. In spite of low dosage, image quality equivalent to that in the conventional direct radiograph is obtained through combined use of the new-type 12-inch metal I.I. with 0.3-mm small-focal-spot X-ray tube. Great contribution to digital radiography is expected of this I.I.

  9. Application of a chronoamperometric measurement to the on-line monitoring of a lithium metal reduction for uranium oxide

    International Nuclear Information System (INIS)

    Kim, Tack-Jin; Cho, Young-Hwan; Choi, In-Kyu; Kang, Jun-Gill; Song, Kyuseok; Jee, Kwang-Yong

    2008-01-01

    Both a potentiometric and a chronoamperometric electrochemical technique have been applied in an attempt to develop an efficient method for an on-line monitoring of a lithium metal reduction process of uranium oxides at a high-temperature in a molten salt medium. As a result of this study, it was concluded that the chronoamperometric method provided a simple and effective way for a direct on-line monitoring measurement of a lithium metal reduction process of uranium oxides at 650 o C by the measuring electrical currents dependency on a variation of the reduction time for the reaction. A potentiometric method, by adopting a homemade oxide ion selective electrode made of ZrO 2 stabilized by a Y 2 O 3 doping, however, was found to be inappropriate for an on-line monitoring of the reduction reaction of uranium oxide in the presence of lithium metal due to an abnormal behavior of the adopted electrodes. The observed experimental results were discussed in detail by comparing them with previously published experimental data

  10. Microstructure Evolution and Composition Control during the Processing of Thin-gage Metallic Foil (Preprint)

    Science.gov (United States)

    2012-02-01

    applications requiring characteristics such as light weight, high structural stiffness, or low thermal conductivity. Ductile, low temperature metals such as...was EDM’ed from the billet/ingot, stress relieved, finish ground, brazed onto an oxygen-free high -conductivity copper backing plate, and attached to...of each alloying element and hence the composition of the deposit. The substrates were a high - temperature alloy steel. They were heated to a

  11. Spatially resolved analysis of resistive switching in transition metal oxide thin films

    OpenAIRE

    Landrock, Ruth Christine

    2011-01-01

    The quest for a non-volatile, small and fast computer memory calls for new memory concepts. Resistive Random Access Memory (ReRAM) based on transition metal oxides is an attractive candidate for future computer memories, because it has the potential of a low power consumption combined with fast switching speeds and good scalability. While in general, switching in such systems relies on a local redox reaction, many details are still unknown or under intense discussion. Especially the geometric...

  12. Axisymmetric modeling of ultrashort-pulse laser interactions with thin metal film

    Directory of Open Access Journals (Sweden)

    E. Majchrzak

    2011-10-01

    Full Text Available The hyperbolic two-temperature model is used in order to describe the heat propagation in metal film subjected to an ultrashort-pulse laser heating. An axisymmetric heat soureceewith Gaussian temporeal and spatial distributions has been taken into account. At the stage of numerical computations the finite difference method is used. In the final part of the paper the examples of computations are shown.

  13. An ultra-thin waveguide twist constructed using fish-scale metallic wires

    OpenAIRE

    Han, Jin; Li, Hongqiang; Fan, Yuancheng; Wei, Zeyong; Wu, Chao; Cao, Yang; Yu, Xing; Li, Fang; Wang, Zhanshan

    2011-01-01

    This study theoretically and experimentally investigates the transmission properties of a metamaterial slab comprised of two layers of metallic fish-scale structure arrays and a sandwiched dielectric layer. Calculations show that the asymmetric transmission can be tuned by varying the slab thickness, due to evanescent interlayer coupling. The spatial evolution of the local field inside the structure indicates that the slab functions as a perfect polarization transformer at certain frequencies...

  14. Metal-oxide assisted surface treatment of polyimide gate insulators for high-performance organic thin-film transistors.

    Science.gov (United States)

    Kim, Sohee; Ha, Taewook; Yoo, Sungmi; Ka, Jae-Won; Kim, Jinsoo; Won, Jong Chan; Choi, Dong Hoon; Jang, Kwang-Suk; Kim, Yun Ho

    2017-06-14

    We developed a facile method for treating polyimide-based organic gate insulator (OGI) surfaces with self-assembled monolayers (SAMs) by introducing metal-oxide interlayers, called the metal-oxide assisted SAM treatment (MAST). To create sites for surface modification with SAM materials on polyimide-based OGI (KPI) surfaces, the metal-oxide interlayer, here amorphous alumina (α-Al 2 O 3 ), was deposited on the KPI gate insulator using spin-coating via a rapid sol-gel reaction, providing an excellent template for the formation of a high-quality SAM with phosphonic acid anchor groups. The SAM of octadecylphosphonic acid (ODPA) was successfully treated by spin-coating onto the α-Al 2 O 3 -deposited KPI film. After the surface treatment by ODPA/α-Al 2 O 3 , the surface energy of the KPI thin film was remarkably decreased and the molecular compatibility of the film with an organic semiconductor (OSC), 2-decyl-7-phenyl-[1]benzothieno[3,2-b][1]benzothiophene (Ph-BTBT-C 10 ), was increased. Ph-BTBT-C 10 molecules were uniformly deposited on the treated gate insulator surface and grown with high crystallinity, as confirmed by atomic force microscopy (AFM) and X-ray diffraction (XRD) analysis. The mobility of Ph-BTBT-C 10 thin-film transistors (TFTs) was approximately doubled, from 0.56 ± 0.05 cm 2 V -1 s -1 to 1.26 ± 0.06 cm 2 V -1 s -1 , after the surface treatment. The surface treatment of α-Al 2 O 3 and ODPA significantly decreased the threshold voltage from -21.2 V to -8.3 V by reducing the trap sites in the OGI and improving the interfacial properties with the OSC. We suggest that the MAST method for OGIs can be applied to various OGI materials lacking reactive sites using SAMs. It may provide a new platform for the surface treatment of OGIs, similar to that of conventional SiO 2 gate insulators.

  15. The nature of extreme emission line galaxies at z = 1-2: kinematics and metallicities from near-infrared spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Maseda, Michael V.; Van der Wel, Arjen; Rix, Hans-Walter; Da Cunha, Elisabete; Meidt, Sharon E. [Max-Planck-Institut für Astronomie, Königstuhl 17, D-69117 Heidelberg (Germany); Pacifici, Camilla [Yonsei University Observatory, Yonsei University, Seoul 120-749 (Korea, Republic of); Momcheva, Ivelina; Van Dokkum, Pieter; Nelson, Erica J. [Department of Astronomy, Yale University, New Haven, CT 06520 (United States); Brammer, Gabriel B.; Ferguson, Henry C.; Koekemoer, Anton M. [Space Telescope Science Institute, 3700 San Martin Drive, Baltimore, MD 21218 (United States); Franx, Marijn; Fumagalli, Mattia [Leiden Observatory, Leiden University, Leiden (Netherlands); Bell, Eric F. [Department of Astronomy, University of Michigan, 500 Church Street, Ann Arbor, MI 48109 (United States); Förster-Schreiber, Natascha M. [Max-Planck-Institut für extraterrestrische Physik, Giessenbachstrasse 1, D-85748 Garching (Germany); Koo, David C. [UCO/Lick Observatory and Department of Astronomy and Astrophysics, University of California Santa Cruz, 1156 High Street, Santa Cruz, CA 95064 (United States); Lundgren, Britt F. [Department of Astronomy, University of Wisconsin, 475 North Charter Street, Madison, WI 53706 (United States); Marchesini, Danilo [Physics and Astronomy Department, Tufts University, Robinson Hall, Room 257, Medford, MA 02155 (United States); Patel, Shannon G., E-mail: maseda@mpia.de [Carnegie Observatories, 813 Santa Barbara Street, Pasadena, CA 91101 (United States); and others

    2014-08-10

    We present near-infrared spectroscopy of a sample of 22 Extreme Emission Line Galaxies at redshifts 1.3 < z < 2.3, confirming that these are low-mass (M{sub *} = 10{sup 8}-10{sup 9} M{sub ☉}) galaxies undergoing intense starburst episodes (M{sub *}/SFR ∼ 10-100 Myr). The sample is selected by [O III] or Hα emission line flux and equivalent width using near-infrared grism spectroscopy from the 3D-HST survey. High-resolution NIR spectroscopy is obtained with LBT/LUCI and VLT/X-SHOOTER. The [O III]/Hβ line ratio is high (≳ 5) and [N II]/Hα is always significantly below unity, which suggests a low gas-phase metallicity. We are able to determine gas-phase metallicities for seven of our objects using various strong-line methods, with values in the range 0.05-0.30 Z{sub ☉} and with a median of 0.15 Z{sub ☉}; for three of these objects we detect [O III] λ4363, which allows for a direct constraint on the metallicity. The velocity dispersion, as measured from the nebular emission lines, is typically ∼50 km s{sup –1}. Combined with the observed star-forming activity, the Jeans and Toomre stability criteria imply that the gas fraction must be large (f{sub gas} ≳ 2/3), consistent with the difference between our dynamical and stellar mass estimates. The implied gas depletion timescale (several hundred Myr) is substantially longer than the inferred mass-weighted ages (∼50 Myr), which further supports the emerging picture that most stars in low-mass galaxies form in short, intense bursts of star formation.

  16. Effect of Variations in Annealing Temperature and Metallic Cations on Nanostructured Molybdate Thin Films

    Directory of Open Access Journals (Sweden)

    Varela JoséArana

    2008-01-01

    Full Text Available AbstractCrystalline molybdate thin films were prepared by the complex polymerization method. The AMoO4(A = Ca, Sr, Ba films were deposited onto Si wafers by the spinning technique. The Mo–O bond in the AMoO4structure was confirmed by FTIR spectra. X-ray diffraction revealed the presence of crystalline scheelite-type phase. The mass, size, and basicity of A2+cations was found to be dependent on the intrinsic characteristics of the materials. The grain size increased in the following order: CaMoO4 < SrMoO4 < BaMoO4. The emission band wavelength was detected at around 576 nm. Our findings suggest that the material’s morphology and photoluminescence were both affected by the variations in cations (Ca, Sr, or Ba and in the thermal treatment.

  17. Thin film metal sensors in fusion bonded glass chips for high-pressure microfluidics

    International Nuclear Information System (INIS)

    Andersson, Martin; Ek, Johan; Hedman, Ludvig; Johansson, Fredrik; Sehlstedt, Viktor; Stocklassa, Jesper; Snögren, Pär; Pettersson, Victor; Larsson, Jonas; Vizuete, Olivier; Hjort, Klas; Klintberg, Lena

    2017-01-01

    High-pressure microfluidics offers fast analyses of thermodynamic parameters for compressed process solvents. However, microfluidic platforms handling highly compressible supercritical CO 2 are difficult to control, and on-chip sensing would offer added control of the devices. Therefore, there is a need to integrate sensors into highly pressure tolerant glass chips. In this paper, thin film Pt sensors were embedded in shallow etched trenches in a glass wafer that was bonded with another glass wafer having microfluidic channels. The devices having sensors integrated into the flow channels sustained pressures up to 220 bar, typical for the operation of supercritical CO 2 . No leakage from the devices could be found. Integrated temperature sensors were capable of measuring local decompression cooling effects and integrated calorimetric sensors measured flow velocities over the range 0.5–13.8 mm s −1 . By this, a better control of high-pressure microfluidic platforms has been achieved. (paper)

  18. Crystalline thin films of transition metal hexacyanochromates grown under Langmuir monolayer

    International Nuclear Information System (INIS)

    Bagkar, Nitin; Choudhury, Sipra; Kim, Kyung-Hee; Chowdhury, Prasanta; Lee, Sung-Ik; Yakhmi, J.V.

    2006-01-01

    Crystalline films of cobalt, nickel and iron hexacyanochromates (analogues of Prussian blue) were grown at air-water interface using a surfactant monolayer as a template. These films were transferred on suitable substrates and characterized by X-ray diffraction (XRD), cyclic voltammetry and magnetization measurements. XRD patterns confirmed the formation of oriented crystals in {100} direction for all these films. Magnetization data on nickel and iron hexacyanochromate films indicated ferromagnetic behaviour below Curie temperatures of 72 and 21 K, respectively. The methodology adopted by us to grow crystalline films is useful in obtaining magnetic thin films of analogues of Prussian blue with interesting magnetic properties with respect to transition temperatures and nature of magnetic ordering

  19. Effects of radiation damage in ion-implanted thin films of metal-oxide superconductors

    International Nuclear Information System (INIS)

    Clark, G.J.; Marwick, A.D.; Koch, R.H.; Laibowitz, R.B.

    1987-01-01

    The effects of ion implantation into thin films of the superconductor YBa 2 Cu 3 O/sub x/ have been studied. Using oxygen and arsenic ions, the superconducting transition temperature T/sub c/, the change in room-temperature electrical properties from conducting to insulating, and the crystalline to amorphous structural transition in the films were studied as a function of ion dose. The deposited energy required to change T/sub c/ was found to be 0.2 eV/atom, while 1--2 eV/atom was required to affect the room-temperature conductivity, and 4 eV/atom to render the film amorphous. This hierarchy of effects is discussed in terms of the damage mechanisms involved

  20. Gravure-Offset Printed Metallization of Multi-Crystalline Silicon Solar Cells with Low Metal-Line Width for Mass Production.

    Science.gov (United States)

    Lee, Jonghwan; Jeong, Chaehwan

    2016-05-01

    The gravure offset method has been developed toward an industrially viable printing technique for electronic circuitry. In this paper, a roller type gravure offset manufacturing process was developed to fabricate fine line for using front electrode for solar cells. In order to obtain the optimum metallization printing lines, thickness of 20 μm which is narrow line is required. The main targets are the reduction of metallized area to reduce the shading loss, and a high conductivity to transport the current as loss free as possible out of the cell. However, it is well known that there is a poor contact resistance between the front Ag electrode and the n(+) emitter. Nickel plating was conducted to prevent the increase of contact resistance and the increase of fill factor (FF). The performance of n-Si/Ag (seed layer)/Ni solar cells were observed in 609 mV of open circuit voltage, 35.54 mA/cm2 of short circuit current density, 75.75% of fill factor, and 16.04% of conversion efficiency.

  1. SDSS-IV MaNGA: the impact of diffuse ionized gas on emission-line ratios, interpretation of diagnostic diagrams and gas metallicity measurements

    Science.gov (United States)

    Zhang, Kai; Yan, Renbin; Bundy, Kevin; Bershady, Matthew; Haffner, L. Matthew; Walterbos, René; Maiolino, Roberto; Tremonti, Christy; Thomas, Daniel; Drory, Niv; Jones, Amy; Belfiore, Francesco; Sánchez, Sebastian F.; Diamond-Stanic, Aleksandar M.; Bizyaev, Dmitry; Nitschelm, Christian; Andrews, Brett; Brinkmann, Jon; Brownstein, Joel R.; Cheung, Edmond; Li, Cheng; Law, David R.; Roman Lopes, Alexandre; Oravetz, Daniel; Pan, Kaike; Storchi Bergmann, Thaisa; Simmons, Audrey

    2017-04-01

    Diffuse ionized gas (DIG) is prevalent in star-forming galaxies. Using a sample of 365 nearly face-on star-forming galaxies observed by Mapping Nearby Galaxies at APO, we demonstrate how DIG in star-forming galaxies impacts the measurements of emission-line ratios, hence the interpretation of diagnostic diagrams and gas-phase metallicity measurements. At fixed metallicity, DIG-dominated low ΣHα regions display enhanced [S II]/Hα, [N II]/Hα, [O II]/Hβ and [O I]/Hα. The gradients in these line ratios are determined by metallicity gradients and ΣHα. In line ratio diagnostic diagrams, contamination by DIG moves H II regions towards composite or low-ionization nuclear emission-line region (LI(N)ER)-like regions. A harder ionizing spectrum is needed to explain DIG line ratios. Leaky H II region models can only shift line ratios slightly relative to H II region models, and thus fail to explain the composite/LI(N)ER line ratios displayed by DIG. Our result favours ionization by evolved stars as a major ionization source for DIG with LI(N)ER-like emission. DIG can significantly bias the measurement of gas metallicity and metallicity gradients derived using strong-line methods. Metallicities derived using N2O2 are optimal because they exhibit the smallest bias and error. Using O3N2, R23, N2 = [N II]/Hα and N2S2Hα to derive metallicities introduces bias in the derived metallicity gradients as large as the gradient itself. The strong-line method of Blanc et al. (IZI hereafter) cannot be applied to DIG to get an accurate metallicity because it currently contains only H II region models that fail to describe the DIG.

  2. On detection and automatic tracking of butt weld line in thin wall pipe welding by a mobile robot with visual sensor

    International Nuclear Information System (INIS)

    Suga, Yasuo; Ishii, Hideaki; Muto, Akifumi

    1992-01-01

    An automatic pipe welding mobile robot system with visual sensor was constructed. The robot can move along a pipe, and detect the weld line to be welded by visual sensor. Moreover, in order to make an automatic welding, the welding torch can track the butt weld line of the pipes at a constant speed by rotating the robot head. Main results obtained are summarized as follows: 1) Using a proper lighting fixed in front of the CCD camera, the butt weld line of thin wall pipes can be recongnized stably. In this case, the root gap should be approximately 0.5 mm. 2) In order to detect the weld line stably during moving along the pipe, a brightness distribution measured by the CCD camera should be subjected to smoothing and differentiating and then the weld line is judged by the maximum and minimum values of the differentials. 3) By means of the basic robot system with a visual sensor controlled by a personal computer, the detection and in-process automatic tracking of a weld line are possible. The average tracking error was approximately 0.2 mm and maximum error 0.5 mm and the welding speed was held at a constant value with error of about 0.1 cm/min. (author)

  3. Electrical Switching in Thin Film Structures Based on Transition Metal Oxides

    Directory of Open Access Journals (Sweden)

    A. Pergament

    2015-01-01

    Full Text Available Electrical switching, manifesting itself in the nonlinear current-voltage characteristics with S- and N-type NDR (negative differential resistance, is inherent in a variety of materials, in particular, transition metal oxides. Although this phenomenon has been known for a long time, recent suggestions to use oxide-based switching elements as neuristor synapses and relaxation-oscillation circuit components have resumed the interest in this area. In the present review, we describe the experimental facts and theoretical models, mainly on the basis of the Mott transition in vanadium dioxide as a model object, of the switching effect with special emphasis on the emerging applied potentialities for oxide electronics.

  4. The influence of nanoscale morphology on the resistivity of cluster-assembled nanostructured metallic thin films

    International Nuclear Information System (INIS)

    Barborini, E; Bertolini, G; Repetto, P; Leccardi, M; Vinati, S; Corbelli, G; Milani, P

    2010-01-01

    We have studied in situ the evolution of the electrical resistivity of Fe, Pd, Nb, W and Mo cluster-assembled films during their growth by supersonic cluster beam deposition. We observed resistivity of cluster-assembled films several orders of magnitude larger than the bulk, as well as an increase in resistivity by increasing the film thickness in contrast to what was observed for atom-assembled metallic films. This suggests that the nanoscale morphological features typical of ballistic films growth, such as the minimal cluster-cluster interconnection and the evolution of surface roughness with thickness, are responsible for the observed behaviour.

  5. Electrodeposition of WO3 nanoparticles into surface mounted metal-organic framework HKUST-1 thin films

    Science.gov (United States)

    Yoo, Hyeonseok; Welle, Alexander; Guo, Wei; Choi, Jinsub; Redel, Engelbert

    2017-03-01

    We describe a novel procedure to fabricate WO3@surface-mounted metal-organic framework (SURMOF) hybrid materials by electrodeposition of WO3 nanoparticles into HKUST-1, also termed Cu3(BTC)2 SURMOFs. These materials have been characterized using x-ray diffraction, time-of-flight secondary ion mass spectrometry, scanning electron microscopy, x-ray photoelectron spectroscopy as well as linear sweep voltammetry. The WO3 semiconductor/SURMOF heterostructures were further tested as hybrid electrodes in their performance for hydrogen evolution reaction from water.

  6. Use of alkali metal salts to prepare high purity single-walled carbon nanotube solutions and thin films

    Science.gov (United States)

    Ashour, Rakan F.

    Single-walled carbon nanotubes (SWCNTs) display interesting electronic and optical properties desired for many advanced thin film applications, such as transparent conductive electrodes or thin-film transistors. Large-scale production of SWCNTs generally results in polydispersed mixtures of nanotube structures. Since SWCNT electronic character (conducting or semiconducting nature) depends on the nanotube structure, application performance is being held back by this inability to discretely control SWCNT synthesis. Although a number of post-production techniques are able to separate SWCNTs based on electronic character, diameter, or chirality, most still suffer from the disadvantage of high costs of materials, equipment, or labor intensity to be relevant for large-scale production. On the other hand, chromatographic separation has emerged as a method that is compatible with large scale separation of metallic and semiconducting SWCNTs. In this work, SWCNTs, in an aqueous surfactant suspension of sodium dodecyl sulfate (SDS), are separated by their electronic character using a gel chromatography process. Metallic SWCNTs (m-SWCNTs) are collected as initial fractions since they show minimum interaction with the gel medium, whereas, semiconducting SWCNTs (sc- SWCNTs) remain adsorbed to the gel. The process of sc-SWCNT retention in the gel is found to be driven by the packing density of SDS around the SWCNTs. Through a series of separation experiments, it is shown that sc-SWCNTs can be eluted from the gel simply by disturbing the configuration of the SDS/SWCNT micellar structure. This is achieved by either introducing a solution containing a co-surfactant, such as sodium cholate (SC), or solutions of alkali metal ionic salts. Analysis of SWCNT suspensions by optical absorption provides insights into the effect of changing the metal ion (M+ = Li+, Na+, and K+) in the eluting solution. Salts with smaller metal ions (e.g. Li+) require higher concentrations to achieve

  7. Optical and Excitonic Properties of Atomically Thin Transition-Metal Dichalcogenides

    Science.gov (United States)

    Berkelbach, Timothy C.; Reichman, David R.

    2018-03-01

    Starting with the isolation of a single sheet of graphene, the study of layered materials has been one of the most active areas of condensed matter physics, chemistry, and materials science. Single-layer transition-metal dichalcogenides are direct-gap semiconducting analogs of graphene that exhibit novel electronic and optical properties. These features provide exciting opportunities for the discovery of both new fundamental physical phenomena as well as innovative device platforms. Here, we review the progress associated with the creation and use of a simple microscopic framework for describing the optical and excitonic behavior of few-layer transition-metal dichalcogenides, which is based on symmetry, band structure, and the effective interactions between charge carriers in these materials. This approach provides an often quantitative account of experiments that probe the physics associated with strong electron–hole interactions in these quasi two-dimensional systems and has been successfully employed by many groups to both describe and predict emergent excitonic behavior in these layered semiconducting systems.

  8. Combinatorial development of antibacterial Zr-Cu-Al-Ag thin film metallic glasses.

    Science.gov (United States)

    Liu, Yanhui; Padmanabhan, Jagannath; Cheung, Bettina; Liu, Jingbei; Chen, Zheng; Scanley, B Ellen; Wesolowski, Donna; Pressley, Mariyah; Broadbridge, Christine C; Altman, Sidney; Schwarz, Udo D; Kyriakides, Themis R; Schroers, Jan

    2016-05-27

    Metallic alloys are normally composed of multiple constituent elements in order to achieve integration of a plurality of properties required in technological applications. However, conventional alloy development paradigm, by sequential trial-and-error approach, requires completely unrelated strategies to optimize compositions out of a vast phase space, making alloy development time consuming and labor intensive. Here, we challenge the conventional paradigm by proposing a combinatorial strategy that enables parallel screening of a multitude of alloys. Utilizing a typical metallic glass forming alloy system Zr-Cu-Al-Ag as an example, we demonstrate how glass formation and antibacterial activity, two unrelated properties, can be simultaneously characterized and the optimal composition can be efficiently identified. We found that in the Zr-Cu-Al-Ag alloy system fully glassy phase can be obtained in a wide compositional range by co-sputtering, and antibacterial activity is strongly dependent on alloy compositions. Our results indicate that antibacterial activity is sensitive to Cu and Ag while essentially remains unchanged within a wide range of Zr and Al. The proposed strategy not only facilitates development of high-performing alloys, but also provides a tool to unveil the composition dependence of properties in a highly parallel fashion, which helps the development of new materials by design.

  9. Swift heavy ion induced de wetting of metal oxide thin films on silicon

    International Nuclear Information System (INIS)

    Bolse, T.; Paulus, H.; Bolse, W.

    2006-01-01

    We have observed that thin oxide coatings (NiO, Fe 2 O 3 ) tend to dewet their Si substrate when being bombarded with swift heavy ions (350-600 MeV Au ions) even though the irradiation was carried out about 80 K and hence, the films never reached their melting point. Scanning electron and atomic force microscopy reveal a surprising similarity of the dewetting morphologies with those observed for molten polymer films on Si, which have recently been reported by others [S. Herminghaus, K. Jakobs, K. Mecke, J. Bischof, A. Fery, M. Ibn-Elhaj, S. Schlagowsky, Science 282 (1998) 916; R. Seemann, S. Herminghaus, K. Jacobs, J. Phys.: Condens. Matter 13 (2001) 4925]. Like in that cases also here heterogeneous and homogeneous hole nucleation could be identified. Heterogeneous nucleation is less pronounced in Fe 2 O 3 /Si than in NiO/Si. The occurrence of spinodal-like dewetting cannot be detected unambiguously. The dewetting kinetics were determined by means of Rutherford backscattering spectroscopy and found to slightly differ for the two compounds. The dewetting kinetics as well as the final dewetting pattern strongly depend on the initial film thicknesses. No dewetting occurs for film thicknesses above about 150 nm, while for very small thicknesses below about 40 nm the film decays into nm-sized spherical droplets. At intermediate film thicknesses percolated networks of small oxide bridges are formed

  10. ZnO THIN FILMS PREPARED BY SPRAY-PYROLYSIS TECHNIQUE FROM ORGANO-METALLIC PRECURSOR

    Directory of Open Access Journals (Sweden)

    Martin Mikulics

    2012-07-01

    Full Text Available Presented experiments utilize methanolic solution of zinc acetyl-acetonate as a precursor and sapphire (001 as a substrate for deposition of thin films of ZnO. The X-ray diffraction analysis revealed polycrystalline character of prepared films with preferential growth orientation along c-axis. The roughness of prepared films was assessed by AFM microscopy and represented by roughness root mean square (RMS value in range of 1.8 - 433 nm. The surface morphology was mapped by scanning electron microscopy showing periodical structure with several local defects. The optical transmittance spectrum of ZnO films was measured in wavelength range of 200-1000 nm. Prepared films are transparent in visible range with sharp ultra-violet cut-off at approximately 370 nm. Raman spectroscopy confirmed wurtzite structure and the presence of compressive stress within its structure as well as the occurrence of oxygen vacancies. The four-point Van der Pauw method was used to study the transport prosperities. The resistivity of presented ZnO films was found 8 × 10–2 Ω cm with carrier density of 1.3 × 1018 cm–3 and electron mobility of 40 cm2 V–1 s–1.

  11. Phase, current, absorbance, and photoluminescence of double and triple metal ion-doped synthetic and salmon DNA thin films

    Science.gov (United States)

    Chopade, Prathamesh; Reddy Dugasani, Sreekantha; Reddy Kesama, Mallikarjuna; Yoo, Sanghyun; Gnapareddy, Bramaramba; Lee, Yun Woo; Jeon, Sohee; Jeong, Jun-Ho; Park, Sung Ha

    2017-10-01

    We fabricated synthetic double-crossover (DX) DNA lattices and natural salmon DNA (SDNA) thin films, doped with 3 combinations of double divalent metal ions (M2+)-doped groups (Co2+-Ni2+, Cu2+-Co2+, and Cu2+-Ni2+) and single combination of a triple M2+-doped group (Cu2+-Ni2+-Co2+) at various concentrations of M2+ ([M2+]). We evaluated the optimum concentration of M2+ ([M2+]O) (the phase of M2+-doped DX DNA lattices changed from crystalline (up to ([M2+]O) to amorphous (above [M2+]O)) and measured the current, absorbance, and photoluminescent characteristics of multiple M2+-doped SDNA thin films. Phase transitions (visualized in phase diagrams theoretically as well as experimentally) from crystalline to amorphous for double (Co2+-Ni2+, Cu2+-Co2+, and Cu2+-Ni2+) and triple (Cu2+-Ni2+-Co2+) dopings occurred between 0.8 mM and 1.0 mM of Ni2+ at a fixed 0.5 mM of Co2+, between 0.6 mM and 0.8 mM of Co2+ at a fixed 3.0 mM of Cu2+, between 0.6 mM and 0.8 mM of Ni2+ at a fixed 3.0 mM of Cu2+, and between 0.6 mM and 0.8 mM of Co2+ at fixed 2.0 mM of Cu2+ and 0.8 mM of Ni2+, respectively. The overall behavior of the current and photoluminescence showed increments as increasing [M2+] up to [M2+]O, then decrements with further increasing [M2+]. On the other hand, absorbance at 260 nm showed the opposite behavior. Multiple M2+-doped DNA thin films can be used in specific devices and sensors with enhanced optoelectric characteristics and tunable multi-functionalities.

  12. Growth and BZO-doping of the nanostructured YBCO thin films on buffered metal substrates

    DEFF Research Database (Denmark)

    Huhtinen, H.; Irjala, M.; Paturi, P.

    2010-01-01

    The growth of the nanostructured YBa2Cu3O6+x (YBCO) films is investigated for the first time on biaxially textured NiW substrates used in coated conductor technology. The optimization process of superconducting layers is made in wide magnetic field and temperature range in order to understand...... the vortex pinning structure and mechanism in our films prepared from nanostructured material. Structural analysis shows that growth mechanism in YBCO films grown on NiW is completely different when compared to YBCO on STO. Films on NiW are much rougher, there is huge in-plane variation of YBCO crystals...... and moreover out-of-plane long range lattice ordering is greatly reduced. Magnetic measurements demonstrate that jc in films grown on NiW is higher in high magnetic fields and low temperatures. This effect is connected to the amount of pinning centres observed in films on metal substrates which are effective...

  13. Metal-Organic Framework Thin Films as Stationary Phases in Microfabricated Gas-Chromatography Columns.

    Energy Technology Data Exchange (ETDEWEB)

    Read, Douglas [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Sillerud, Colin Halliday [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

    2016-01-01

    The overarching goal of this project is to integrate Sandia's microfabricated gas-chromatography ( GC) columns with a stationary phase material that is capable of retaining high-volatility chemicals and permanent gases. The successful integration of such a material with GCs would dramatically expand the repertoire of detectable compounds for Sandia's various microanalysis systems. One such promising class of candidate materials is metal-organic frameworks (MOFs). In this report we detail our methods for controlled deposition of HKUST-1 MOF stationary phases within GC columns. We demonstrate: the chromatographic separation of natural gas; a method for determining MOF film thickness from chromatography alone; and the first-reported GC x GC separation of natural gas -- in general -- let alone for two disparate MOF stationary phases. In addition we determine the fundamental thermodynamic constant for mass sorption, the partition coefficient, for HKUST-1 and several light hydrocarbons and select toxic industrial chemicals.

  14. Atomic-layer-deposited WNxCy thin films as diffusion barrier for copper metallization

    Science.gov (United States)

    Kim, Soo-Hyun; Oh, Su Suk; Kim, Ki-Bum; Kang, Dae-Hwan; Li, Wei-Min; Haukka, Suvi; Tuominen, Marko

    2003-06-01

    The properties of WNxCy films deposited by atomic layer deposition (ALD) using WF6, NH3, and triethyl boron as source gases were characterized as a diffusion barrier for copper metallization. It is noted that the as-deposited film shows an extremely low resistivity of about 350 μΩ cm with a film density of 15.37 g/cm3. The film composition measured from Rutherford backscattering spectrometry shows W, C, and N of ˜48, 32, and 20 at. %, respectively. Transmission electron microscopy analyses show that the as-deposited film is composed of face-centered-cubic phase with a lattice parameter similar to both β-WC1-x and β-W2N with an equiaxed microstructure. The barrier property of this ALD-WNxCy film at a nominal thickness of 12 nm deposited between Cu and Si fails only after annealing at 700 °C for 30 min.

  15. Front buried metallic contacts and thin porous silicon combination for efficient polycrystalline silicon solar cells

    International Nuclear Information System (INIS)

    Ben Rabha, M.; Boujmil, M.F.; Meddeb, N.; Saadoun, M.; Bessais, B.

    2006-01-01

    We investigate the impacts of achieving buried grid metallic contacts (BGMC), with and without application of a front porous silicon (PS) layer, on the photovoltaic properties of polycrystalline silicon (pc-Si) solar cells. A grooving method based on Chemical Vapor Etching (CVE) was used to perform buried grid contacts on the emitter of pc-Si solar cells. After realizing the n + /p junction using a phosphorus diffusion source, BGMCs were realized using the screen printing technique. We found that the buried metallic contacts improve the short circuit current from 16 mA/cm 2 (for reference cell without buried contacts) to about 19 mA/cm 2 . After application of a front PS layer on the n + emitter, we observe an enhancement of the short circuit current from 19 to 24 mA/cm 2 with a decrease of the reflectivity by about 40% of its initial value. The dark I-V characteristics of the pc-Si cells with PS-based emitter show an important reduction of the reverse current together with an improvement of the rectifying behaviour. Spectral response measurements performed at a wavelength range of 400-1100 nm showed a significant increase in the quantum efficiency, particularly at shorter wavelength (400-650 nm). These results indicate that the BGMCs improve the carrier collection and that the PS layer acts as an antireflective coating that reduces reflection losses and passivates the front surface. This low cost and simple technology based on the CVE technique could enable preparing efficient polycrystalline silicon solar cells

  16. Strategies to prepare TiO2 thin films, doped with transition metal ions, that exhibit specific physicochemical properties to support osteoblast cell adhesion and proliferation

    International Nuclear Information System (INIS)

    Dhayal, Marshal; Kapoor, Renu; Sistla, Pavana Goury; Pandey, Ravi Ranjan; Kar, Satabisha; Saini, Krishan Kumar; Pande, Gopal

    2014-01-01

    Metal ion doped titanium oxide (TiO 2 ) thin films, as bioactive coatings on metal or other implantable materials, can be used as surfaces for studying the cell biological properties of osteogenic and other cell types. Bulk crystallite phase distribution and surface carbon–oxygen constitution of thin films, play an important role in determining the biological responses of cells that come in their contact. Here we present a strategy to control the polarity of atomic interactions between the dopant metal and TiO 2 molecules and obtain surfaces with smaller crystallite phases and optimal surface carbon–oxygen composition to support the maximum proliferation and adhesion of osteoblast cells. Our results suggest that surfaces, in which atomic interactions between the dopant metals and TiO 2 were less polar, could support better adhesion, spreading and proliferation of cells. - Highlights: • Electrochemical properties of dopants control the nature of TiO 2 thin films. • A model explains the correlation of dopant properties and behaviour of TiO 2 films. • Dopants with less polar interaction with TiO 2 exhibit better biological activity

  17. Dislocation density and Burgers vector population in fiber-textured Ni thin films determined by high-resolution X-ray line profile analysis

    DEFF Research Database (Denmark)

    Csiszár, Gábor; Pantleon, Karen; Alimadadi, Hossein

    2012-01-01

    distribution are determined by high-resolution X-ray diffraction line profile analysis. The substructure parameters are correlated with the strength of the films by using the combined Taylor and Hall-Petch relations. The convolutional multiple whole profile method is used to obtain the substructure parameters......Nanocrystalline Ni thin films have been produced by direct current electrodeposition with different additives and current density in order to obtain 〈100〉, 〈111〉 and 〈211〉 major fiber textures. The dislocation density, the Burgers vector population and the coherently scattering domain size...

  18. Mutual Inductance Problem for a System Consisting of a Current Sheet and a Thin Metal Plate

    Science.gov (United States)

    Fulton, J. P.; Wincheski, B.; Nath, S.; Namkung, M.

    1993-01-01

    Rapid inspection of aircraft structures for flaws is of vital importance to the commercial and defense aircraft industry. In particular, inspecting thin aluminum structures for flaws is the focus of a large scale R&D effort in the nondestructive evaluation (NDE) community. Traditional eddy current methods used today are effective, but require long inspection times. New electromagnetic techniques which monitor the normal component of the magnetic field above a sample due to a sheet of current as the excitation, seem to be promising. This paper is an attempt to understand and analyze the magnetic field distribution due to a current sheet above an aluminum test sample. A simple theoretical model, coupled with a two dimensional finite element model (FEM) and experimental data will be presented in the next few sections. A current sheet above a conducting sample generates eddy currents in the material, while a sensor above the current sheet or in between the two plates monitors the normal component of the magnetic field. A rivet or a surface flaw near a rivet in an aircraft aluminum skin will disturb the magnetic field, which is imaged by the sensor. Initial results showed a strong dependence of the flaw induced normal magnetic field strength on the thickness and conductivity of the current-sheet that could not be accounted for by skin depth attenuation alone. It was believed that the eddy current imaging method explained the dependence of the thickness and conductivity of the flaw induced normal magnetic field. Further investigation, suggested the complexity associated with the mutual inductance of the system needed to be studied. The next section gives an analytical model to better understand the phenomenon.

  19. Metallic substrate materials for thin film oxygen transport membranes for application in a fossil power plant

    Energy Technology Data Exchange (ETDEWEB)

    Xing, Y.; Baumann, S.; Sebold, D.; Meulenberg, W.A.; Stoever, D. [Forschungszentrum Juelich GmbH (DE). Inst. fuer Energieforschung (IEF) - IEF-1 Materials Synthesis and Processing

    2010-07-01

    La{sub 0.58}Sr{sub 0.4}CO{sub 0.2}Fe{sub 0.8}O{sub 3-{delta}} (LSCF58428) and Ba{sub 0.5}Sr{sub 0.5}CO{sub 0.8}Fe{sub 3-{delta}} (BSCF5582) exhibit high oxygen permeability due to their high ionic and electronic conductivity. For this reason they are under discussion for application in oxygen transport membranes (OTMs) in zero-emission power plants using oxyfuel technology. A thin film membrane which can increase the oxygen flux is beneficial and a structural substrate is required. Two types of Ni-base alloys were studied as substrate material candidates with a number of advantages, such as high strength, high temperature stability, easy joining and similar thermal expansion coefficient to the selected perovskite materials. Chemical compositions and thermal expansion coefficients of Ni-base alloys were measured in this study. LSCF58428 and BSCF5582 layers were screen printed on Ni-based alloys and co-fired at high temperature in air. The microstructure and element analysis of samples were characterized by scanning electron microscopy (SEM and EDX). A Ni-base alloy, MCrAlY, with a high Al content was the most suitable substrate material, and showed better chemical compatibility with perovskite materials at high temperature than Hastelloy X, which is a chromia-forming Ni-base alloy. A reaction occurred between Sr in the perovskite and the alumina surface layers on MCr-AlY. However, the reaction zone did not increase in thickness during medium-term annealing at 800 C in air. Hence, it is expected that this reaction will not prevent the application of MCr-AlY as a substrate material. (orig.)

  20. Guidelines for Selecting Plugs Used in Thin-Walled Tube Drawing Processes of Metallic Alloys

    Directory of Open Access Journals (Sweden)

    Eva María Rubio

    2017-12-01

    Full Text Available In this paper, some practical guidelines to select the plug or set of plugs more adequate to carry out drawing processes of thin-walled tubes carried out with fixed conical inner plug are presented. For this purpose, the most relevant input parameters have been considered in this study: the tube material, the most important geometrical parameters of the process (die semiangle, α , and cross-sectional area reduction, r and the friction conditions (Coulomb friction coefficients, μ 1 , between the die and the tube outer surface, and μ 2 , between the plug and the tube inner surface. Three work-hardening materials are analyzed: the annealed copper UNS C11000, the aluminum UNS A91100, and the stainless steel UNS S34000. The analysis is realized by means of the upper bound method (UBM, modelling the plastic deformation zone by triangular rigid zones (TRZ, under the validated assumption that the process occurs under plane strain conditions. The obtained results allow establishing, for each material, a group of geometrical parameters, friction conditions, a set of plugs that make possible to carry out the process under good conditions, and the optimum plug to carry out the process using the minimum amount of energy. The proposed model is validated by means of an own finite element analysis (FEA carried out under different conditions and, in addition, by other finite element method (FEM simulations and real experiments taken from other researchers found in the literature (called literature simulations and literature experimental results, respectively. As a main conclusion, it is possible to affirm that the plug that allows carrying out the process with minimum quantity of energy is cylindrical in most cases.

  1. Improvement on post-OPC verification efficiency for contact/via coverage check by final CD biasing of metal lines and considering their location on the metal layout

    Science.gov (United States)

    Kim, Youngmi; Choi, Jae-Young; Choi, Kwangseon; Choi, Jung-Hoe; Lee, Sooryong

    2011-04-01

    As IC design complexity keeps increasing, it is more and more difficult to ensure the pattern transfer after optical proximity correction (OPC) due to the continuous reduction of layout dimensions and lithographic limitation by k1 factor. To guarantee the imaging fidelity, resolution enhancement technologies (RET) such as off-axis illumination (OAI), different types of phase shift masks and OPC technique have been developed. In case of model-based OPC, to cross-confirm the contour image versus target layout, post-OPC verification solutions continuously keep developed - contour generation method and matching it to target structure, method for filtering and sorting the patterns to eliminate false errors and duplicate patterns. The way to detect only real errors by excluding false errors is the most important thing for accurate and fast verification process - to save not only reviewing time and engineer resource, but also whole wafer process time and so on. In general case of post-OPC verification for metal-contact/via coverage (CC) check, verification solution outputs huge of errors due to borderless design, so it is too difficult to review and correct all points of them. It should make OPC engineer to miss the real defect, and may it cause the delay time to market, at least. In this paper, we studied method for increasing efficiency of post-OPC verification, especially for the case of CC check. For metal layers, final CD after etch process shows various CD bias, which depends on distance with neighbor patterns, so it is more reasonable that consider final metal shape to confirm the contact/via coverage. Through the optimization of biasing rule for different pitches and shapes of metal lines, we could get more accurate and efficient verification results and decrease the time for review to find real errors. In this paper, the suggestion in order to increase efficiency of OPC verification process by using simple biasing rule to metal layout instead of etch model

  2. Fabrication and Characterization of CZTS Thin Films Prepared by the Sulfurization of RF-Sputtered Stacked Metal Precursors

    Science.gov (United States)

    Abusnina, Mohamed; Moutinho, Helio; Al-Jassim, Mowafak; DeHart, Clay; Matin, Mohammed

    2014-09-01

    In this work, Cu2ZnSnS4 (CZTS) thin films were prepared by the sulfurization of metal precursors deposited sequentially via radio frequency magnetron sputtering on Mo-coated soda-lime glass. The stack order of the precursors was Mo/Zn/Sn/Cu. Sputtered precursors were annealed in sulfur atmosphere with nine different conditions to study the impact of sulfurization time and substrate temperature on the structural, morphological, and optical properties of the final CZTS films. X-ray fluorescence was used to determine the elemental composition ratio of the metal precursors. Final CZTS films were characterized by x-ray diffraction (XRD), scanning electron microscopy (SEM), and energy-dispersive spectroscopy (EDS). XRD and EDS were combined to investigate the films' structure and to identify the presence of secondary phases. XRD analysis indicated an improvement in film crystallinity with an increase of the substrate temperature and annealing times. Also indicated was the minimization and/or elimination of secondary phases when the films experienced longer annealing time. EDS revealed slight Sn loss in films sulfurized at 550°C; however, an increase of the sulfurization temperature to 600°C did not confirm these results. SEM study showed that films treated with higher temperatures exhibited dense morphology, indicating the completion of the sulfurization process. The estimated absorption coefficient was on the order of 104 cm-1 for all CZTS films, and the values obtained for the optical bandgap energy of the films were between 1.33 eV and 1.52 eV.

  3. Tailoring of the morphology and chemical composition of thin organosilane microwave plasma polymer layers on metal substrates

    Energy Technology Data Exchange (ETDEWEB)

    Grundmeier, G.; Thiemann, P.; Carpentier, J.; Shirtcliffe, N.; Stratmann, M

    2004-01-01

    The growth of thin microwave organosilicon plasma polymers on model zinc surfaces was investigated as a function of the film thickness and the oxygen partial pressure during film deposition. The evolution of the topology of the film was studied by atomic force microscopy (AFM). The nano- and micro-roughness was investigated at the inner and the outer surfaces of the plasma polymers. A special etching procedure was developed to reveal the underside of the plasma polymer and thereby its inner surface. Rough films contained voids at the interface, which reduced the polymer/metal contact area. The increase in oxygen partial pressure led to a smoother film growth with a perfect imitation of the substrate topography at the interface. The chemical structure of the films was determined by infrared reflection absorption spectroscopy (IRRAS), X-ray photoelectron spectroscopy and time-of-flight secondary ion mass spectroscopy (ToF-SIMS). ToF-SIMS at the outer and the inner surface of the plasma polymers showed that the density of methylsilyl groups increases in the outer surface layer of the plasma polymer and depends on the oxygen partial pressure. The chemical composition of the films could be altered to pure SiO{sub 2} without changing the morphology by using oxygen-plasma post-treatment. This was proved by means of IRRAS and AFM. Chemistry and topology of the films were correlated with the apparent water contact angle. It was found that a linear relationship exists between the nanoscopic roughness of the plasma polymer and the static contact angle of water. Superposition of a nanoscopic roughness of the metal surface and the nanoscopic roughness of methylsilyl-rich films led to ultra-hydrophobic films with water contact angles up to 160 deg.

  4. Experimental Studies of the Electrothermal and Magneto-Rayleigh Taylor Instabilities on Thin Metal Foil Ablations

    Science.gov (United States)

    Steiner, Adam; Yager-Elorriaga, David; Patel, Sonal; Jordan, Nicholas; Gilgenbach, Ronald; Lau, Y. Y.

    2015-11-01

    The electrothermal instability (ETI) and magneto-Rayleigh Taylor instability (MRT) are important in the implosion of metallic liners, such as magnetized liner implosion fusion (MagLIF). The MAIZE linear transformer driver (LTD) at the University of Michigan generates 200 ns risetime-current pulses of 500 to 600 kA into Al foil liners to study plasma instabilities and implosion dynamics, most recently MRT growth on imploding cylindrical liners. A full circuit model of MAIZE, along with I-V measurements, yields time-resolved load inductance. This has enabled measurements of an effective current-carrying radius to determine implosion velocity and plasma-vacuum interface acceleration. Measurements are also compared to implosion data from 4-time-frame laser shadowgraphy. Improved resolution measurements on the laser shadowgraph system have been used to examine the liner interface early in the shot to examine surface perturbations resulting from ETI for various seeding conditions. Fourier analysis examines the growth rates of wavelength bands of these structures to examine the transition from ETI to MRT. This work was supported by the U.S. DoE through award DE-SC0012328. S.G. Patel is supported by Sandia National Labs. D.A. Yager is supported by NSF fellowship grant DGE 1256260.

  5. Atomic-layer-deposited WNxCy thin films as diffusion barrier for copper metallization

    International Nuclear Information System (INIS)

    Kim, Soo-Hyun; Oh, Su Suk; Kim, Ki-Bum; Kang, Dae-Hwan; Li, Wei-Min; Haukka, Suvi; Tuominen, Marko

    2003-01-01

    The properties of WN x C y films deposited by atomic layer deposition (ALD) using WF 6 , NH 3 , and triethyl boron as source gases were characterized as a diffusion barrier for copper metallization. It is noted that the as-deposited film shows an extremely low resistivity of about 350 μΩ cm with a film density of 15.37 g/cm 3 . The film composition measured from Rutherford backscattering spectrometry shows W, C, and N of ∼48, 32, and 20 at. %, respectively. Transmission electron microscopy analyses show that the as-deposited film is composed of face-centered-cubic phase with a lattice parameter similar to both β-WC 1-x and β-W 2 N with an equiaxed microstructure. The barrier property of this ALD-WN x C y film at a nominal thickness of 12 nm deposited between Cu and Si fails only after annealing at 700 deg. C for 30 min

  6. Metal ion analysis in contaminated water samples using anodic stripping voltammetry and a nanocrystalline diamond thin-film electrode

    International Nuclear Information System (INIS)

    Sonthalia, Prerna; McGaw, Elizabeth; Show, Yoshiyuki; Swain, Greg M.

    2004-01-01

    Boron-doped nanocrystalline diamond thin-film electrodes were employed for the detection and quantification of Ag (I), Cu (II), Pb (II), Cd (II), and Zn (II) in several contaminated water samples using anodic stripping voltammetric (ASV). Diamond is an alternate electrode that possesses many of the same attributes as Hg and, therefore, appears to be a viable material for this electroanalytical measurement. The nanocrystalline form has been found to perform slightly better than the more conventional microcrystalline form of diamond in this application. Differential pulse voltammetry (DPASV) was used to detect these metal ions in lake water, well water, tap water, wastewater treatment sludge, and soil. The electrochemical results were compared with data from inductively coupled plasma mass spectrometric (ICP-MS) and or atomic absorption spectrometric (AAS) measurements of the same samples. Diamond is shown to function well in this electroanalytical application, providing a wide linear dynamic range, a low limit of quantitation, excellent response precision, and good response accuracy. For the analysis of Pb (II), bare diamond provided a response nearly identical to that obtained with a Hg-coated glassy carbon electrode

  7. A Semi-Analytical Extraction Method for Interface and Bulk Density of States in Metal Oxide Thin-Film Transistors.

    Science.gov (United States)

    Chen, Weifeng; Wu, Weijing; Zhou, Lei; Xu, Miao; Wang, Lei; Ning, Honglong; Peng, Junbiao

    2018-03-11

    A semi-analytical extraction method of interface and bulk density of states (DOS) is proposed by using the low-frequency capacitance-voltage characteristics and current-voltage characteristics of indium zinc oxide thin-film transistors (IZO TFTs). In this work, an exponential potential distribution along the depth direction of the active layer is assumed and confirmed by numerical solution of Poisson's equation followed by device simulation. The interface DOS is obtained as a superposition of constant deep states and exponential tail states. Moreover, it is shown that the bulk DOS may be represented by the superposition of exponential deep states and exponential tail states. The extracted values of bulk DOS and interface DOS are further verified by comparing the measured transfer and output characteristics of IZO TFTs with the simulation results by a 2D device simulator ATLAS (Silvaco). As a result, the proposed extraction method may be useful for diagnosing and characterising metal oxide TFTs since it is fast to extract interface and bulk density of states (DOS) simultaneously.

  8. A Semi-Analytical Extraction Method for Interface and Bulk Density of States in Metal Oxide Thin-Film Transistors

    Directory of Open Access Journals (Sweden)

    Weifeng Chen

    2018-03-01

    Full Text Available A semi-analytical extraction method of interface and bulk density of states (DOS is proposed by using the low-frequency capacitance–voltage characteristics and current–voltage characteristics of indium zinc oxide thin-film transistors (IZO TFTs. In this work, an exponential potential distribution along the depth direction of the active layer is assumed and confirmed by numerical solution of Poisson’s equation followed by device simulation. The interface DOS is obtained as a superposition of constant deep states and exponential tail states. Moreover, it is shown that the bulk DOS may be represented by the superposition of exponential deep states and exponential tail states. The extracted values of bulk DOS and interface DOS are further verified by comparing the measured transfer and output characteristics of IZO TFTs with the simulation results by a 2D device simulator ATLAS (Silvaco. As a result, the proposed extraction method may be useful for diagnosing and characterising metal oxide TFTs since it is fast to extract interface and bulk density of states (DOS simultaneously.

  9. Structural and Optical Properties of ZnO Thin Film Prepared by Oxidation of Zn Metal Powders

    International Nuclear Information System (INIS)

    Hassan, N.K.; Hashim, M.R.

    2013-01-01

    High quality ZnO nano structures have been fabricated at room temperature by a simple vacuum thermal evaporator from metallic Zn powders (99.999 % purity) on a silicon (100) substrate. The Zn thin films were then transferred into a thermal tube furnace for oxidation at 700 degree Celsius for different time durations. Time was found to be a critical factor in the synthesis. This was followed by characterization of their morphological, structural and optical properties. The morphology of the grown ZnO nano structures exhibited several large grains, which increased gradually with increasing oxidation time. The crystallinity of the grown nano structures was investigated using X-ray diffraction, revealing that the synthesized ZnO was in hexagonal wurtzite phase. The photoluminescence (PL) spectra of the fabricated ZnO nano structures showed high intensity peak in the UV region due to near-band-edge (NBE) emission in which the structures oxidized for 30 min showing highest intensity. (author)

  10. Effects of composition and microstructure of Pd-Cu-Si metallic glassy alloy thin films on hydrogen absorbing properties

    International Nuclear Information System (INIS)

    Kajita, Susumu; Kohara, Shinji; Onodera, Yohei; Fukunaga, Toshiharu; Matsubara, Eiichiro

    2011-01-01

    Thin films of Pd-Cu-Si metallic glassy alloys for a hydrogen sensor were fabricated by a sputtering method. In order to find out the effect of the composition and the microstructure of them on the hydrogen absorbing property (the H 2 response), the structural parameters based on the short-range order (SRO) were measured. Additionally, the change of the structural parameters with hydrogen absorption was measured, and the correlations of the change with the H 2 response and the hydrogen induced linear expansion coefficient (LEC) were examined. The H 2 response decreased with increases in Si content and the structural parameters. These results can be explained by the positive effects of Si content and the structural parameters on the formation of a trigonal prism which is a structural unit of Pd-based amorphous alloys, and by the negative effect of the trigonal prism on absorbing hydrogen. From the observation of the elongation of the Pd-Pd atomic distance with absorbing hydrogen, H atoms are supposed to occupy the space between Pd atoms. The amount of the change in the Pd-Pd atomic distance showed the positive correlations with the H 2 response and the LEC. (author)

  11. Layer-by-layer modification of thin-film metal-semiconductor multilayers with ultrashort laser pulses

    Science.gov (United States)

    Romashevskiy, S. A.; Tsygankov, P. A.; Ashitkov, S. I.; Agranat, M. B.

    2018-05-01

    The surface modifications in a multilayer thin-film structure (50-nm alternating layers of Si and Al) induced by a single Gaussian-shaped femtosecond laser pulse (350 fs, 1028 nm) in the air are investigated by means of atomic-force microscopy (AFM), scanning electron microscopy (SEM), and optical microscopy (OM). Depending on the laser fluence, various modifications of nanometer-scale metal and semiconductor layers, including localized formation of silicon/aluminum nanofoams and layer-by-layer removal, are found. While the nanofoams with cell sizes in the range of tens to hundreds of nanometers are produced only in the two top layers, layer-by-layer removal is observed for the four top layers under single pulse irradiation. The 50-nm films of the multilayer structure are found to be separated at their interfaces, resulting in a selective removal of several top layers (up to 4) in the form of step-like (concentric) craters. The observed phenomenon is associated with a thermo-mechanical ablation mechanism that results in splitting off at film-film interface, where the adhesion force is less than the bulk strength of the used materials, revealing linear dependence of threshold fluences on the film thickness.

  12. Hydrogen Absorption in Metal Thin Films and Heterostructures Investigated in Situ with Neutron and X-ray Scattering

    Directory of Open Access Journals (Sweden)

    Sara J. Callori

    2016-05-01

    Full Text Available Due to hydrogen possessing a relatively large neutron scattering length, hydrogen absorption and desorption behaviors in metal thin films can straightforwardly be investigated by neutron reflectometry. However, to further elucidate the chemical structure of the hydrogen absorbing materials, complementary techniques such as high resolution X-ray reflectometry and diffraction remain important too. Examples of work on such systems include Nb- and Pd-based multilayers, where Nb and Pd both have strong affinity to hydrogen. W/Nb and Fe/Nb multilayers were measured in situ with unpolarized and polarized neutron reflectometry under hydrogen gas charging conditions. The gas-pressure/hydrogen-concentration dependence, the hydrogen-induced macroscopic film swelling as well as the increase in crystal lattice plane distances of the films were determined. Ferromagnetic-Co/Pd multilayers were studied with polarized neutron reflectometry and in situ ferromagnetic resonance measurements to understand the effect of hydrogen absorption on the magnetic properties of the system. This electronic effect enables a novel approach for hydrogen sensing using a magnetic readout scheme.

  13. Fabrication and non-covalent modification of highly oriented thin films of a zeolite-like metal-organic framework (ZMOF) with rho topology

    KAUST Repository

    Shekhah, Osama

    2015-01-01

    Here we report the fabrication of the first thin film of a zeolite-like metal-organic framework (ZMOF) with rho topology (rho-ZMOF-1, ([In48(HImDC)96]48-)n) in a highly oriented fashion on a gold-functionalized substrate. The oriented rho-ZMOF-1 film was functionalized by non-covalent modification via post-synthetic exchange of different probe molecules, such as acridine yellow, methylene blue, and Nile red. In addition, encapsulation of a porphyrin moiety was achieved via in situ synthesis and construction of the rho-ZMOF. Adsorption kinetics of volatile organic compounds on rho-ZMOF-1 thin films was also investigated. This study suggests that rho-ZMOF-1 thin films can be regarded as a promising platform for various applications such as sensing and catalysis. This journal is

  14. NEW PERSPECTIVE ON GALAXY OUTFLOWS FROM THE FIRST DETECTION OF BOTH INTRINSIC AND TRAVERSE METAL-LINE ABSORPTION

    Energy Technology Data Exchange (ETDEWEB)

    Kacprzak, Glenn G.; Cooke, Jeff [Swinburne University of Technology, Victoria 3122 (Australia); Martin, Crystal L.; Ho, Stephanie H. [Physics Department, University of California, Santa Barbara, CA 93106 (United States); Bouché, Nicolas; LeReun, Audrey; Schroetter, Ilane [CNRS, Institut de Recherche en Astrophysique et Planétologie (IRAP) de Toulouse, 14 Avenue E. Belin, F-31400 Toulouse (France); Churchill, Christopher W.; Klimek, Elizabeth, E-mail: gkacprzak@astro.swin.edu.au [New Mexico State University, Las Cruces, NM 88003 (United States)

    2014-09-01

    We present the first observation of a galaxy (z = 0.2) that exhibits metal-line absorption back-illuminated by the galaxy (down-the-barrel) and transversely by a background quasar at a projected distance of 58 kpc. Both absorption systems, traced by Mg II, are blueshifted relative to the galaxy systemic velocity. The quasar sight line, which resides almost directly along the projected minor axis of the galaxy, probes Mg I and Mg II absorption obtained from the Keck/Low Resolution Imaging Spectrometer as well as Lyα, Si II, and Si III absorption obtained from the Hubble Space Telescope/Cosmic Origins Spectrograph. For the first time, we combine two independent models used to quantify the outflow properties for down-the-barrel and transverse absorption. We find that the modeled down-the-barrel deprojected outflow velocities range between V {sub dtb} = 45-255 km s{sup –1}. The transverse bi-conical outflow model, assuming constant-velocity flows perpendicular to the disk, requires wind velocities V {sub outflow} = 40-80 km s{sup –1} to reproduce the transverse Mg II absorption kinematics, which is consistent with the range of V {sub dtb}. The galaxy has a metallicity, derived from Hα and N II, of [O/H] = –0.21 ± 0.08, whereas the transverse absorption has [X/H] = –1.12 ± 0.02. The galaxy star formation rate is constrained between 4.6-15 M {sub ☉} yr{sup –1} while the estimated outflow rate ranges between 1.6-4.2 M {sub ☉} yr{sup –1} and yields a wind loading factor ranging between 0.1-0.9. The galaxy and gas metallicities, the galaxy-quasar sight-line geometry, and the down-the-barrel and transverse modeled outflow velocities collectively suggest that the transverse gas originates from ongoing outflowing material from the galaxy. The ∼1 dex decrease in metallicity from the base of the outflow to the outer halo suggests metal dilution of the gas by the time it reached 58 kpc.

  15. Theoretical study of thin metallic deposit layers: from electronic structure to kinetics

    International Nuclear Information System (INIS)

    Senhaji, Abdelali

    1993-01-01

    We have studied the relation between the equilibrium surface segregation in an alloy A c B 1-c and the kinetics of dissolution of a few metallic layers of A (or B) deposited on a B (or A) substrate. We used an energetic model derived from the electronic structure (T.B.I.M.) allowing us to study the surface segregation both in disordered and in ordered alloys. Moreover we have developed a kinetic model (K.T.B.I.M.) consistent with the TBIM energetic model to study the kinetics both of segregation and dissolution. This process has been applied to the Cu-Pt system for which Auger, LEED and photoemission experiments are in progress at L.U.R.E. Concerning the equilibrium surface segregation in the ordered state we have studied all the possible terminations for the (111) and (100) faces in the various ordered structures occurring on the F.C.C. lattice (L1 0 , L1 1 - L1 2 and L'). In particular we have determined the domain of (meta)stability of each termination, which is very useful to understand the competition between single and double steps in ordered alloys. Studying the kinetics of dissolution of a few layers of Cu (or Pt) deposited on the (111) or (100) face of a Pt (or Cu) substrate, we have shown the formation of surface compounds with a great variety of behaviours depending on the face or on the temperature. All these behaviours can be rationalized with the local equilibrium concept, which we have defined accurately within our model and which allows to connect the dissolution mode with the equilibrium segregation. (author) [fr

  16. Study of the influence between the strength of antibending of working rolls on the widening during hot rolling of thin sheet metal

    Directory of Open Access Journals (Sweden)

    U. Muhin

    2016-07-01

    Full Text Available Based on the variation principle of Jourdan was developed a mathematical model of the process of widening freely in hot rolling of thin sheet metal. The principle applies to rigid-plastic materials and for the cinematically admissible area of speeds. The developed model allows to study the distribution of the widening on the length of the deformation zone depending on the parameters of the rolling process and sheet metal. Results are obtained, characterizing the size of the widening and effectiveness of the process control on tension at the entrance and exit from the stand. The widening is dependent on the strength of anti bending.

  17. Compositional and electrical properties of line and planar defects in Cu(In,Ga)Se{sub 2} thin films for solar cells - a review

    Energy Technology Data Exchange (ETDEWEB)

    Abou-Ras, Daniel; Schmidt, Sebastian S.; Schaefer, Norbert; Kavalakkatt, Jaison; Rissom, Thorsten; Unold, Thomas; Mainz, Roland; Weber, Alfons [Helmholtz-Zentrum Berlin fuer Materialien und Energie GmbH, Hahn-Meitner-Platz 1, 14109, Berlin (Germany); Kirchartz, Thomas [Forschungszentrum Juelich, Institut fuer Energie- und Klimaforschung (IEK-5), Photovoltaik, 52428, Juelich (Germany); Simsek Sanli, Ekin; Aken, Peter A. van [Max Planck Institute for Solid State Research, Heisenbergstrasse 1, 70569, Stuttgart (Germany); Ramasse, Quentin M. [SuperSTEM Laboratory, SciTech Daresbury Campus, Keckwick Lane, Daresbury, WA4 4AD (United Kingdom); Kleebe, Hans-Joachim [Technische Universitaet Darmstadt, Institut fuer Angewandte Geowissenschaften, Schnittspahnstrasse 9, 64287, Darmstadt (Germany); Azulay, Doron; Balberg, Isaac; Millo, Oded [Racah Institute of Physics, The Hebrew University of Jerusalem, Jerusalem, 91904 (Israel); Cojocaru-Miredin, Oana [RWTH Aachen, Physikalisches Institut IA, Sommerfeldstr. 14, 52074, Aachen (Germany); Barragan-Yani, Daniel; Albe, Karsten [Technische Universitaet Darmstadt, FG Materialmodellierung, Jovanka-Bontschits-Str. 2, 64287, Darmstadt (Germany); Haarstrich, Jakob; Ronning, Carsten [Institut fuer Festkoerperphysik, Friedrich Schiller Universitaet Jena, Max-Wien-Platz 1, 07743, Jena (Germany)

    2016-05-15

    The present review gives an overview of the various reports on properties of line and planar defects in Cu(In,Ga)(S,Se){sub 2} thin films for high-efficiency solar cells. We report results from various analysis techniques applied to characterize these defects at different length scales, which allow for drawing a consistent picture on structural and electronic defect properties. A key finding is atomic reconstruction detected at line and planar defects, which may be one mechanism to reduce excess charge densities and to relax deep-defect states from midgap to shallow energy levels. On the other hand, nonradiative Shockley-Read-Hall recombination is still enhanced with respect to defect-free grain interiors, which is correlated with substantial reduction of luminescence intensities. Comparison of the microscopic electrical properties of planar defects in Cu(In,Ga)(S,Se){sub 2} thin films with two-dimensional device simulations suggest that these defects are one origin of the reduced open-circuit voltage of the photovoltaic devices. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  18. Compositional and electrical properties of line and planar defects in Cu(In,Ga)Se2 thin films for solar cells - a review

    International Nuclear Information System (INIS)

    Abou-Ras, Daniel; Schmidt, Sebastian S.; Schaefer, Norbert; Kavalakkatt, Jaison; Rissom, Thorsten; Unold, Thomas; Mainz, Roland; Weber, Alfons; Kirchartz, Thomas; Simsek Sanli, Ekin; Aken, Peter A. van; Ramasse, Quentin M.; Kleebe, Hans-Joachim; Azulay, Doron; Balberg, Isaac; Millo, Oded; Cojocaru-Miredin, Oana; Barragan-Yani, Daniel; Albe, Karsten; Haarstrich, Jakob; Ronning, Carsten

    2016-01-01

    The present review gives an overview of the various reports on properties of line and planar defects in Cu(In,Ga)(S,Se) 2 thin films for high-efficiency solar cells. We report results from various analysis techniques applied to characterize these defects at different length scales, which allow for drawing a consistent picture on structural and electronic defect properties. A key finding is atomic reconstruction detected at line and planar defects, which may be one mechanism to reduce excess charge densities and to relax deep-defect states from midgap to shallow energy levels. On the other hand, nonradiative Shockley-Read-Hall recombination is still enhanced with respect to defect-free grain interiors, which is correlated with substantial reduction of luminescence intensities. Comparison of the microscopic electrical properties of planar defects in Cu(In,Ga)(S,Se) 2 thin films with two-dimensional device simulations suggest that these defects are one origin of the reduced open-circuit voltage of the photovoltaic devices. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  19. Toxicological interactions of silver nanoparticles and non-essential metals in human hepatocarcinoma cell line

    DEFF Research Database (Denmark)

    Miranda, Renata Rank; Bezerra, Arandi Ginane; Ribeiro, Ciro Alberto Oliveira

    2017-01-01

    Toxicological interaction represents a challenge to toxicology, particularly for novel contaminants. There are no data whether silver nanoparticles (AgNPs), present in a wide variety of products, can interact and modulate the toxicity of ubiquitous contaminants, such as nonessential metals. In th...

  20. High-resolution structural studies of ultra-thin magnetic, transition metal overlayers and two-dimensional transition metal oxides using synchrotron radiation

    International Nuclear Information System (INIS)

    Kellar, S.A.; Lawrence Berkeley National Lab., CA

    1997-05-01

    This thesis report the surface-structure determination of three, ultra-thin magnetic transition-metal films, Fe/Au(100), Mn/Ni(100), and Mn/Cu(100) using Angle-Resolved Photoemission Extended Fine Structure (ARPEFS) and photoelectron holography. These structural studies are the first to use non-s initial states in the ARPEFS procedure. This thesis also reports an ARPEFS surface-structure determination of a two-dimensional transition-metal oxide, [(1 x 1)O/W(110)] x 12. The authors have analyzed the ARPFES signal from the Au 4f 7/5 core level of the Au(1 ML)/Fe(15 ML)/Au(100) system. The analysis shows that the Fe grows layer by layer with one monolayer of gold, acting as a surfactant, remaining on top of the growing Fe layers. These surface gold atoms sit in the four-fold hollow site, 1.67 ± 0.02 A above the iron surface. The grown Fe layer is very much like the bulk, bcc iron, with an interlayer spacing of 1.43 ± 0.03 A. Analysis of the Mn 3p ARPEFS signals from c(2 x 2)Mn/Ni(100) and c(2 x 2)Mn/Cu(100) shows that the Mn forms highly corrugated surface alloys. The corrugation of the Mn/Ni(100) and Mn/Cu(100) systems are 0.24 ± 0.02 A and 0.30 ± 0.04 A respectively. In both cases the Mn is sticking above the plane of the surface substrate atoms. For the Mn/Ni(100) system the first layer Ni is contracted 4% from the bulk value. The Mn/Cu(100) system shows bulk spacing for the substrate Cu. Photoelectron holography shows that the Mn/Ni interface is very abrupt with very little Mn leaking into the second layer, while the Mn/Cu(100) case has a significant amount of Mn leaking into the second layer. A new, five-element electrostatic electron lens was developed for hemispherical electron-energy analyzers. This lens system can be operated at constant transverse or constants angular magnification, and has been optimized for use with the very small photon-spot sizes. Improvements to the hemispherical electron-energy analyzer are also discussed