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Sample records for lightly doped band

  1. Wavelength-tuned light emission via modifying the band edge symmetry: Doped SnO2 as an example

    KAUST Repository

    Zhou, Hang

    2014-03-27

    We report the observation of ultraviolet photoluminescence and electroluminescence in indium-doped SnO2 thin films with modified "forbidden" bandgap. With increasing indium concentration in SnO 2, dominant visible light emission evolves into the ultraviolet regime in photoluminescence. Hybrid functional first-principles calculations demonstrate that the complex of indium dopant and oxygen vacancy breaks "forbidden" band gap to form allowed transition states. Furthermore, undoped and 10% indium-doped SnO2 layers are synthesized on p-type GaN substrates to obtain SnO2-based heterojunction light-emitting diodes. A dominant visible emission band is observed in the undoped SnO 2-based heterojunction, whereas strong near-ultraviolet emission peak at 398 nm is observed in the indium-doped SnO2-based heterojunction. Our results demonstrate an unprecedented doping-based approach toward tailoring the symmetry of band edge states and recovering ultraviolet light emission in wide-bandgap oxides. © 2014 American Chemical Society.

  2. Visible-light activity of N-LiInO{sub 2}: Band structure modifications through interstitial nitrogen doping

    Energy Technology Data Exchange (ETDEWEB)

    Xu, Kaiqiang [College of Material Science and Engineering, Hunan University, Changsha, 410082 (China); Xu, Difa, E-mail: xudifa@sina.com [Hunan Key Laboratory of Applied Environmental Photocatalysis, Changsha University, Changsha, 410022 (China); Zhang, Xiangchao; Luo, Zhuo; Wang, Yutang [Hunan Key Laboratory of Applied Environmental Photocatalysis, Changsha University, Changsha, 410022 (China); Zhang, Shiying, E-mail: cdzhangshiying@163.com [College of Material Science and Engineering, Hunan University, Changsha, 410082 (China); Hunan Key Laboratory of Applied Environmental Photocatalysis, Changsha University, Changsha, 410022 (China)

    2017-01-01

    Highlights: • The interstitial nitrogen doping into LiInO{sub 2} is achieved at low temperature. • The band gap narrowing to an extent of 2.8 eV from 3.5 eV is observed. • The doping favours charge carrier separation and photocatalytic activity. • Superoxide radical is the dominant active specie in the pollutant degradation. - Abstract: Element doping is a promising strategy to improve the photo-response and photocatalytic activity of semiconductor photocatalyst with a wide band gap. To reduce the band gap of LiInO{sub 2} that is considered as a novel photocatalyst, nitrogen-doped LiInO{sub 2} (N-LiInO{sub 2}) is successfully fabricated by treating LiInO{sub 2} and urea at 200 °C. It is found that interstitial instead of substitutional configurations are formed in the crystal structure of N-LiInO{sub 2} due to the low-treating temperature and rich-oxygen conditions. The interstitial N-doping forms a doping state with 0.6 eV above the valence band maximum and a defect state with 0.1 eV below the conduction band minimum, reducing the band gap of LiInO{sub 2} from 3.5 to 2.8 eV. N-LiInO{sub 2} exhibits higher photocatalytic activity towards methylene blue (MB) degradation under 380 nm light irradiation, which is 1.4 times that of pure LiInO{sub 2}. The enhanced photocatalytic activity of N-LiInO{sub 2} is attributed to the extended light absorption and the improved charge carrier separation, which result in more reactive species participating in the photcatalytic process. This work provides a further understanding on tuning the band structure of semiconductor photocatalyst by N-doping strategies.

  3. Wavelength-tuned light emission via modifying the band edge symmetry: Doped SnO2 as an example

    KAUST Repository

    Zhou, Hang; Deng, Rui; Li, Yongfeng; Yao, Bin; Ding, Zhanhui; Wang, Qingxiao; Han, Yu; Wu, Tao; Liu, Lei

    2014-01-01

    at 398 nm is observed in the indium-doped SnO2-based heterojunction. Our results demonstrate an unprecedented doping-based approach toward tailoring the symmetry of band edge states and recovering ultraviolet light emission in wide-bandgap oxides. © 2014

  4. Angle-resolved photoemission spectroscopy of band tails in lightly doped cuprates

    OpenAIRE

    Alexandrov, A. S.; Reynolds, K.

    2007-01-01

    We amend ab initio strongly-correlated band structures by taking into account the band-tailing phenomenon in doped charge-transfer Mott-Hubbard insulators. We show that the photoemission from band tails accounts for sharp "quasi-particle" peaks, rapid loss of their intensities in some directions of the Brillouin zone ("Fermi-arcs") and high-energy "waterfall" anomalies as a consequence of matrix-element effects of disorder-localised states in the charge-transfer gap of doped cuprates.

  5. Narrow band gap and visible light-driven photocatalysis of V-doped Bi{sub 6}Mo{sub 2}O{sub 15} nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    Xu, Jian; Qin, Chuanxiang; Huang, Yanlin [State and Local Joint Engineering Laboratory for Novel Functional Polymeric Materials, College of Chemistry, Chemical Engineering and Materials Science, Soochow University, Suzhou 215123 (China); Wang, Yaorong, E-mail: yrwang@suda.edu.cn [State and Local Joint Engineering Laboratory for Novel Functional Polymeric Materials, College of Chemistry, Chemical Engineering and Materials Science, Soochow University, Suzhou 215123 (China); Qin, Lin [Department of Physics and Interdisciplinary Program of Biomedical, Mechanical & Electrical Engineering, Pukyong National University, Busan 608-737 (Korea, Republic of); Seo, Hyo Jin, E-mail: hjseo@pknu.ac.kr [Department of Physics and Interdisciplinary Program of Biomedical, Mechanical & Electrical Engineering, Pukyong National University, Busan 608-737 (Korea, Republic of)

    2017-02-28

    Highlights: • V{sup 5+}-doped Bi{sub 6}Mo{sub 2}O{sub 15} was synthesized by the electrospinning preparation. • The band gap energy of Bi{sub 6}Mo{sub 2}O{sub 15} was greatly reduced by V-doping in the lattices. • V-doped Bi{sub 6}Mo{sub 2}O{sub 15} shows high activity in RhB degradation under visible light. • Crystal structure of Bi{sub 6}Mo{sub 2}O{sub 15} is favorable for high photocatalytic capacity. - Abstract: Pure and V{sup 5+}-doped Bi{sub 6}Mo{sub 2}O{sub 15} (3Bi{sub 2}O{sub 3}·2MoO{sub 3}) photocatalysts were synthesized through electrospinning, followed by low-temperature heat treatment. The samples developed into nanoparticles with an average size of approximately 50 nm. The crystalline phases were verified via X-ray powder diffraction measurements (XRD). The surface properties of the photocatalysts were studied by scanning electron microscopy (SEM), transmission electron microscopy (TEM) and X-ray photoelectron spectroscopy (XPS) analyses. The UV–vis spectra showed that V doping in Bi{sub 6}Mo{sub 2}O{sub 15} shifted the optical absorption from the UV region to the visible-light wavelength region. The energy of the band gap of Bi{sub 6}Mo{sub 2}O{sub 15} was reduced by V doping in the lattices. The photocatalytic activities of the pure and V-doped Bi{sub 6}Mo{sub 2}O{sub 15} were tested through photodegradation of rhodamine B (RhB) dye solutions under visible light irradiation. Results showed that 20 mol% V-doped Bi{sub 6}Mo{sub 2}O{sub 15} achieved efficient photocatalytic ability. RhB could be degraded by V-doped Bi{sub 6}Mo{sub 2}O{sub 15} in 2 h. The photocatalytic activities and mechanisms were discussed according to the characteristics of the crystal structure and the results of EIS and XPS measurements.

  6. Preparation and spectroscopic characterization of visible light sensitized N doped TiO2 (rutile)

    International Nuclear Information System (INIS)

    Livraghi, S.; Czoska, A.M.; Paganini, M.C.; Giamello, E.

    2009-01-01

    Nitrogen doped TiO 2 represents one of the most promising material for photocatalitic degradation of environmental pollutants with visible light. However, at present, a great deal of activity is devoted to the anatase polymorph while few data about rutile are available. In the present paper we report an experimental characterization of N doped polycrystalline rutile TiO 2 prepared via sol-gel synthesis. Nitrogen doping does not affect the valence band to conduction band separation but, generates intra band gap localized states which are responsible of the on set of visible light absorption. The intra band gap states correspond to a nitrogen containing defect similar but not coincident with that recently reported for N doped anatase. - Graphical abstract: Nitrogen doped TiO 2 represents one of the most promising material for photocatalitic degradation of environmental pollutants with visible light. However, at present, a great deal of activity is devoted to the anatase polymorph while few data about rutile are available. In the present paper we report an experimental characterization of N doped polycrystalline rutile TiO 2 prepared via sol-gel synthesis

  7. Strong Energy-momentum Dispersion of Phonon Dressed Carriers in the Lightly Doped Band Insulator SrTiO3

    International Nuclear Information System (INIS)

    Meevasana, Warawat

    2010-01-01

    Much progress has been made recently in the study of the effects of electron-phonon (el-ph) coupling in doped insulators using angle resolved photoemission (ARPES), yielding evidence for the dominant role of el-ph interactions in underdoped cuprates. As these studies have been limited to doped Mott insulators, the important question arises how this compares with doped band insulators where similar el-ph couplings should be at work. The archetypical case is the perovskite SrTiO 3 (STO), well known for its giant dielectric constant of 10000 at low temperature, exceeding that of La 2 CuO 4 by a factor of 500. Based on this fact, it has been suggested that doped STO should be the archetypical bipolaron superconductor. Here we report an ARPES study from high-quality surfaces of lightly doped SrTiO 3 . Comparing to lightly doped Mott insulators, we find the signatures of only moderate electron-phonon coupling: a dispersion anomaly associated with the low frequency optical phonon with a λ(prime) ∼ 0.3 and an overall bandwidth renormalization suggesting an overall λ(prime) ∼ 0.7 coming from the higher frequency phonons. Further, we find no clear signatures of the large pseudogap or small polaron phenomena. These findings demonstrate that a large dielectric constant itself is not a good indicator of el-ph coupling and highlight the unusually strong effects of the el-ph coupling in doped Mott insulators.

  8. Recent progress on doped ZnO nanostructures for visible-light photocatalysis

    International Nuclear Information System (INIS)

    Samadi, Morasae; Zirak, Mohammad; Naseri, Amene; Khorashadizade, Elham; Moshfegh, Alireza Z.

    2016-01-01

    Global environmental pollution and energy supply demand have been regarded as important concerns in recent years. Metal oxide semiconductor photocatalysts is a promising approach to apply environmental remediation as well as fuel generation from water splitting and carbon dioxide reduction. ZnO nanostructures have been shown promising photocatalytic activities due to their non-toxic, inexpensive, and highly efficient nature. However, its wide band gap hinders photo-excitation for practical photocatalytic applications under solar light as an abundant, clean and safe energy source. To overcome this barrier, many strategies have been developed in the last decade to apply ZnO nanostructured photocatalysts under visible light. In this review, we have classified different approaches to activate ZnO as a photocatalyst in visible-light spectrum. Utilization of various nonmetals, transition metals and rare-earth metals for doping in ZnO crystal lattice to create visible-light-responsive doped ZnO photocatalysts is discussed. Generation of localized energy levels within the gap in doped ZnO nanostructures has played an important role in effective photocatalytic reaction under visible-light irradiation. The effect of dopant type, ionic size and its concentration on the crystal structure, electronic property and morphology of doped ZnO with a narrower band gap is reviewed systematically. Finally, a comparative study is performed to evaluate two classes of metals and nonmetals as useful dopants for ZnO nanostructured photocatalysts under visible light. - Highlights: • Metals and nonmetals used as a dopant to shift ZnO band gap toward visible-light. • Modification of electronic structure played a crucial role in doped ZnO activity. • Correlation between dopant's characteristics and ZnO visible activity was reviewed. • Photo-degradation of doped ZnO was studied and compared for different dopants.

  9. Recent progress on doped ZnO nanostructures for visible-light photocatalysis

    Energy Technology Data Exchange (ETDEWEB)

    Samadi, Morasae; Zirak, Mohammad [Department of Physics, Sharif University of Technology, P.O. Box 11555-9161, Tehran (Iran, Islamic Republic of); Naseri, Amene [Institute for Nanoscience and Nanotechnology, Sharif University of Technology, P.O. Box 11365-8639, Tehran (Iran, Islamic Republic of); Khorashadizade, Elham [Department of Physics, Sharif University of Technology, P.O. Box 11555-9161, Tehran (Iran, Islamic Republic of); Moshfegh, Alireza Z., E-mail: moshfegh@sharif.edu [Department of Physics, Sharif University of Technology, P.O. Box 11555-9161, Tehran (Iran, Islamic Republic of); Institute for Nanoscience and Nanotechnology, Sharif University of Technology, P.O. Box 11365-8639, Tehran (Iran, Islamic Republic of)

    2016-04-30

    Global environmental pollution and energy supply demand have been regarded as important concerns in recent years. Metal oxide semiconductor photocatalysts is a promising approach to apply environmental remediation as well as fuel generation from water splitting and carbon dioxide reduction. ZnO nanostructures have been shown promising photocatalytic activities due to their non-toxic, inexpensive, and highly efficient nature. However, its wide band gap hinders photo-excitation for practical photocatalytic applications under solar light as an abundant, clean and safe energy source. To overcome this barrier, many strategies have been developed in the last decade to apply ZnO nanostructured photocatalysts under visible light. In this review, we have classified different approaches to activate ZnO as a photocatalyst in visible-light spectrum. Utilization of various nonmetals, transition metals and rare-earth metals for doping in ZnO crystal lattice to create visible-light-responsive doped ZnO photocatalysts is discussed. Generation of localized energy levels within the gap in doped ZnO nanostructures has played an important role in effective photocatalytic reaction under visible-light irradiation. The effect of dopant type, ionic size and its concentration on the crystal structure, electronic property and morphology of doped ZnO with a narrower band gap is reviewed systematically. Finally, a comparative study is performed to evaluate two classes of metals and nonmetals as useful dopants for ZnO nanostructured photocatalysts under visible light. - Highlights: • Metals and nonmetals used as a dopant to shift ZnO band gap toward visible-light. • Modification of electronic structure played a crucial role in doped ZnO activity. • Correlation between dopant's characteristics and ZnO visible activity was reviewed. • Photo-degradation of doped ZnO was studied and compared for different dopants.

  10. Doping effect on monolayer MoS2 for visible light dye degradation - A DFT study

    Science.gov (United States)

    Cheriyan, Silpa; Balamurgan, D.; Sriram, S.

    2018-04-01

    The electronic and optical properties of, Nitrogen (N), Cobalt (Co), and Co-N co-doped monolayers of MoS2 has been studied by using density functional theory (DFT) for visible light photocatalytic activity. From the calculations, it has been observed that the band gap of monolayer MoS2 has been reduced while doping. However, the band gaps of pristine and N doped MoS2 monolayers only falls in the visible region while for Co and Co-N co-doped systems, the band gap shifted to IR region. The optical calculation also confirms the results. The formation energy values of the doped system reaveal that MoS2 monolayer drops its stability while doping. To evaluate the photocatalytic response, band edge potentials of pristine and N-MoS2 are calculated, and the observed results show that compared to N-doped MoS2 monolayer, pure MoS2 is highly suitable for visible light photocatalytic dye degradation.

  11. Band structure and visible light photocatalytic activity of multi-type nitrogen doped TiO(2) nanoparticles prepared by thermal decomposition.

    Science.gov (United States)

    Dong, Fan; Zhao, Weirong; Wu, Zhongbiao; Guo, Sen

    2009-03-15

    Multi-type nitrogen doped TiO(2) nanoparticles were prepared by thermal decomposition of the mixture of titanium hydroxide and urea at 400 degrees C for 2h. The as-prepared photocatalysts were characterized by X-ray diffraction (XRD), high-resolution transmission electron microscopy (HRTEM), X-ray photoelectron spectroscopy (XPS), UV-vis diffuse reflectance spectra (UV-vis DRS), and photoluminescence (PL). The results showed that the as-prepared samples exhibited strong visible light absorption due to multi-type nitrogen doped in the form of substitutional (N-Ti-O and Ti-O-N) and interstitial (pi* character NO) states, which were 0.14 and 0.73 eV above the top of the valence band, respectively. A physical model of band structure was established to clarify the visible light photocatalytic process over the as-prepared samples. The photocatalytic activity was evaluated for the photodegradation of gaseous toluene under visible light irradiation. The activity of the sample prepared from wet titanium hydroxide and urea (TiO(2)-Nw, apparent reaction rate constant k = 0.045 min(-1)) was much higher than other samples including P25 (k = 0.0013 min(-1)). The high activity can be attributed to the results of the synergetic effects of strong visible light absorption, good crystallization, large surface hydroxyl groups, and enhanced separation of photoinduced carriers.

  12. Double-doped TiO{sub 2} nanoparticles as an efficient visible-light-active photocatalyst and antibacterial agent under solar simulated light

    Energy Technology Data Exchange (ETDEWEB)

    Ashkarran, Ali Akbar, E-mail: ashkarran@umz.ac.ir [Department of Physics, Faculty of Basic Sciences, University of Mazandaran, Babolsar (Iran, Islamic Republic of); Hamidinezhad, Habib [Nano and Biotechnology Research Group, Faculty of Basic Sciences, University of Mazandaran, Babolsar (Iran, Islamic Republic of); Haddadi, Hedayat [Department of Chemistry, Faculty of Sciences, Shahrekord University, P.O. Box 115, Shahrekord (Iran, Islamic Republic of); Mahmoudi, Morteza [Department of Nanotechnology, Faculty of Pharmacy, Tehran University of Medical Sciences, Tehran (Iran, Islamic Republic of); Nanotechnology Research Center, Faculty of Pharmacy, Tehran University of Medical Sciences, Tehran (Iran, Islamic Republic of)

    2014-05-01

    Graphical abstract: Double doping introduces two different electronic states in the band gap of TiO{sub 2}, which increase the lifetime of the charge carriers and leads to narrower band gap and enhancement of the visible-light absorption. - Highlights: • Preparation of single and double doped TiO{sub 2} NPs using a simple sol–gel route. • Extension of light absorption spectrum toward the visible region. • Enhanced visible-light photo-induced activity and antibacterial property in double doped TiO{sub 2} NPs. - Abstract: Silver and nitrogen doped TiO{sub 2} nanoparticles (NPs) were synthesized via sol–gel method. The physicochemical properties of the achieved NPs were characterized by various methods including X-Ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), X-ray photoelectron spectroscopy (XPS), and ultra violet–visible absorption spectroscopy (UV–vis). Both visible-light photocatalytic activity and antimicrobial properties were successfully demonstrated for the degradation of Rhodamine B (Rh. B.), as a model dye, and inactivation of Escherichia coli (E. coli), as a representative of microorganisms. The concentration of the employed dopant was optimized and the results revealed that the silver and nitrogen doped TiO{sub 2} NPs extended the light absorption spectrum toward the visible region and significantly enhanced the photodegradation of model dye and inactivation of bacteria under visible-light irradiation while double-doped TiO{sub 2} NPs exhibited highest photocatalytic and antibacterial activity compared with single doping. The significant enhancement in the photocatalytic activity and antibacterial properties of the double doped TiO{sub 2} NPs, under visible-light irradiation, can be attributed to the generation of two different electronic states acting as electron traps in TiO{sub 2} and responsible for narrowing the band gap of TiO{sub 2} and shifting its optical response from UV to the

  13. Origin of visible-light sensitivity in N-doped TiO2 films

    International Nuclear Information System (INIS)

    Nakano, Yoshitaka; Morikawa, Takeshi; Ohwaki, Takeshi; Taga, Yasunori

    2007-01-01

    We report on visible-light sensitivity in N-doped TiO 2 (TiO 2 :N) films that were deposited on n + -GaN/Al 2 O 3 substrates by reactive magnetron sputtering and subsequently crystallized by annealing at 550 deg. C in flowing N 2 gas. The N-doping concentration was ∼8.8%, as determined by X-ray photoelectron spectroscopy measurements. From transmission electron microscopic observations and optical absorption measurements, yellow-colored TiO 2 :N samples showed an enhanced granular structure and strong absorption in the visible-light region. Photoelectron spectroscopy in air measurements showed a noticeable decrease in ionization energy of TiO 2 by the N doping. Deep-level optical spectroscopy measurements revealed two characteristic deep levels located at ∼1.18 and ∼2.48 eV below the conduction band. The 1.18 eV level is probably attributable to the O vacancy state and can be active as an efficient generation-recombination center. The pronounced 2.48 eV band is newly introduced by the N doping and contributes to band-gap narrowing of TiO 2 by mixing with the O 2p valence band. Therefore, this localized intraband is probably one origin of visible-light sensitivity in TiO 2 :N

  14. Sensitization of Perovskite Strontium Stannate SrSnO3 towards Visible-Light Absorption by Doping

    Directory of Open Access Journals (Sweden)

    Hungru Chen

    2014-01-01

    Full Text Available Perovskite strontium stannate SrSnO3 is a promising photocatalyst. However, its band gap is too large for efficient solar energy conversion. In order to sensitize SrSnO3 toward visible-light activities, the effects of doping with various selected cations and anions are investigated by using hybrid density functional calculations. Results show that doping can result in dopant level to conduction band transitions which lie lower in energy compared to the original band gap transition. Therefore, it is expected that doping SrSnO3 can induce visible-light absorption.

  15. Visible light carrier generation in co-doped epitaxial titanate films

    Energy Technology Data Exchange (ETDEWEB)

    Comes, Ryan B., E-mail: ryan.comes@pnnl.gov; Kaspar, Tiffany C.; Chambers, Scott A. [Fundamental and Computational Sciences Directorate, Pacific Northwest National Laboratory, Richland, Washington 99354 (United States); Smolin, Sergey Y.; Baxter, Jason B. [Department of Chemical and Biological Engineering, Drexel University, Philadelphia, Pennsylvania 19104 (United States); Gao, Ran [Department of Materials Science and Engineering, University of California-Berkeley, Berkeley, California 94720 (United States); Apgar, Brent A. [Department of Materials Science and Engineering, University of California-Berkeley, Berkeley, California 94720 (United States); Department of Materials Science and Engineering, University of Illinois at Urbana-Champaign, Champaign, Illinois 61801 (United States); Martin, Lane W. [Department of Materials Science and Engineering, University of California-Berkeley, Berkeley, California 94720 (United States); Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States); Bowden, Mark E. [Environmental Molecular Sciences Laboratory, Pacific Northwest National Laboratory, Richland, Washington 99354 (United States)

    2015-03-02

    Perovskite titanates such as SrTiO{sub 3} (STO) exhibit a wide range of important functional properties, including ferroelectricity and excellent photocatalytic performance. The wide optical band gap of titanates limits their use in these applications; however, making them ill-suited for integration into solar energy harvesting technologies. Our recent work has shown that by doping STO with equal concentrations of La and Cr, we can enhance visible light absorption in epitaxial thin films while avoiding any compensating defects. In this work, we explore the optical properties of photoexcited carriers in these films. Using spectroscopic ellipsometry, we show that the Cr{sup 3+} dopants, which produce electronic states immediately above the top of the O 2p valence band in STO reduce the direct band gap of the material from 3.75 eV to 2.4–2.7 eV depending on doping levels. Transient reflectance spectroscopy measurements are in agreement with the observations from ellipsometry and confirm that optically generated carriers are present for longer than 2 ns. Finally, through photoelectrochemical methylene blue degradation measurements, we show that these co-doped films exhibit enhanced visible light photocatalysis when compared to pure STO.

  16. Visible-light electroluminescence in Mn-doped GaAs light-emitting diodes

    International Nuclear Information System (INIS)

    Nam Hai, Pham; Maruo, Daiki; Tanaka, Masaaki

    2014-01-01

    We observed visible-light electroluminescence (EL) due to d-d transitions in light-emitting diodes with Mn-doped GaAs layers (here, referred to as GaAs:Mn). Besides the band-gap emission of GaAs, the EL spectra show two peaks at 1.89 eV and 2.16 eV, which are exactly the same as 4 A 2 ( 4 F) → 4 T 1 ( 4 G) and 4 T 1 ( 4 G) → 6 A 1 ( 6 S) transitions of Mn atoms doped in ZnS. The temperature dependence and the current-density dependence are consistent with the characteristics of d-d transitions. We explain the observed EL spectra by the p-d hybridized orbitals of the Mn d electrons in GaAs

  17. Observation of intermediate bands in Eu3+ doped YPO4 host: Li+ ion effect and blue to pink light emitter

    Directory of Open Access Journals (Sweden)

    Abdul Kareem Parchur

    2012-09-01

    Full Text Available This article explores the tuning of blue to pink colour generation from Li+ ion co-doped YPO4:5Eu nanoparticles prepared by polyol method at ∼100-120 °C with ethylene glycol (EG as a capping agent. Interaction of EG molecules capped on the surface of the nanoparticles and/or created oxygen vacancies induces formation of intermediate/mid gap bands in the host structure, which is supported by UV-Visible absorption data. Strong blue and pink colors can be observed in the cases of as-prepared and 500 °C annealed samples, respectively. Co-doping of Li+ enhances the emission intensities of intermediate band as well as Eu3+. On annealing as-prepared sample to 500 °C, the intermediate band emission intensity decreases, whereas Eu3+ emission intensity increases suggesting increase of extent of energy transfer from the intermediate band to Eu3+ on annealing. Emission intensity ratio of electric to magnetic dipole transitions of Eu3+ can be varied by changing excitation wavelength. The X-ray photoelectron spectroscopy (XPS study of as-prepared samples confirms the presence of oxygen vacancies and Eu3+ but absence of Eu2+. Dispersed particles in ethanol and polymer film show the strong blue color, suggesting that these materials will be useful as probes in life science and also in light emitting device applications.

  18. Fe/Co doped molybdenum diselenide: a promising two-dimensional intermediate-band photovoltaic material

    International Nuclear Information System (INIS)

    Zhang, Jiajia; He, Haiyan; Pan, Bicai

    2015-01-01

    An intermediate-band (IB) photovoltaic material is an important candidate in developing the new-generation solar cell. In this paper, we propose that the Fe-doped or the Co-doped MoSe 2 just meets the required features in IB photovoltaic materials. Our calculations demonstrate that when the concentration of the doped element reaches 11.11%, the doped MoSe 2 shows a high absorptivity for both infrared and visible light, where the photovoltaic efficiency of the doped MoSe 2 is as high as 56%, approaching the upper limit of photovoltaic efficiency of IB materials. So, the Fe- or Co-doped MoSe 2 is a promising two-dimensional photovoltaic material. (paper)

  19. Photocatalytic hydrogen generation enhanced by band gap narrowing and improved charge carrier mobility in AgTaO3 by compensated co-doping.

    Science.gov (United States)

    Li, Min; Zhang, Junying; Dang, Wenqiang; Cushing, Scott K; Guo, Dong; Wu, Nianqiang; Yin, Penggang

    2013-10-14

    The correlation of the electronic band structure with the photocatalytic activity of AgTaO3 has been studied by simulation and experiments. Doping wide band gap oxide semiconductors usually introduces discrete mid-gap states, which extends the light absorption but has limited benefit for photocatalytic activity. Density functional theory (DFT) calculations show that compensated co-doping in AgTaO3 can overcome this problem by increasing the light absorption and simultaneously improving the charge carrier mobility. N/H and N/F co-doping can delocalize the discrete mid-gap states created by sole N doping in AgTaO3, which increases the band curvature and the electron-to-hole effective mass ratio. In particular, N/F co-doping creates a continuum of states that extend the valence band of AgTaO3. N/F co-doping thus improves the light absorption without creating the mid-gap states, maintaining the necessary redox potentials for water splitting and preventing from charge carrier trapping. The experimental results have confirmed that the N/F-codoped AgTaO3 exhibits a red-shift of the absorption edge in comparison with the undoped AgTaO3, leading to remarkable enhancement of photocatalytic activity toward hydrogen generation from water.

  20. Visible light carrier generation in co-doped epitaxial titanate films

    Energy Technology Data Exchange (ETDEWEB)

    Comes, Ryan B.; Smolin, Sergey Y.; Kaspar, Tiffany C.; Gao, Ran; Apgar, Brent A.; Martin, Lane W.; Bowden, Mark E.; Baxter, Jason; Chambers, Scott A.

    2015-03-02

    Perovskite titanates such as SrTiO3 (STO) exhibit a wide range of important functional properties, including high electron mobility, ferroelectricity—which may be valuable in photovoltaic applications—and excellent photocatalytic performance. The wide optical band gap of titanates limits their use in these applications, however, making them ill-suited for integration into solar energy harvesting technologies. Our recent work has shown that by doping STO with equal concentrations of La and Cr we can enhance visible light absorption in epitaxial thin films while avoiding any compensating defects. In this work, we explore the optical properties of photoexcited carriers in these films. Using spectroscopic ellipsometry, we show that the Cr3+ dopants, which produce electronic states immediately above the top of the O 2p valence band in STO reduce the direct band gap of the material from 3.75 eV to between 2.4 and 2.7 eV depending on doping levels. Transient reflectance measurements confirm that optically generated carriers have a recombination lifetime comparable to that of STO and are in agreement with the observations from ellipsometry. Finally, through photoelectrochemical yield measurements, we show that these co-doped films exhibit enhanced visible light photocatalysis when compared to pure STO.

  1. Effect of light Si doping on the properties of GaN

    International Nuclear Information System (INIS)

    Shang, Lin; Zhai, Guangmei; Jia, Zhigang; Mei, Fuhong; Lu, Taiping; Liu, Xuguang; Xu, Bingshe

    2016-01-01

    An obvious increase in electron mobility and yellow luminescence (YL) band intensity was found in light Si doping GaN. For a series of GaN samples with different doping concentration, the dislocation density is almost the same. It is inferred that the abrupt increase in mobility and YL intensity does not originate from the change of dislocation density. The mobility behavior is attributed to the screening of scattering by dislocation and increase of ionized impurity scattering with the increase of Si doping concentration. At lower doping level, the screening of dislocation scattering is dominant, which results in the increase in carrier mobility. At higher doping level, the increase in ionized impurity scattering leads to the decrease in carrier mobility. Higher mobility causes longer diffusion length of nonequilibrium carrier. More dislocations will participate in the recombination process which induces stronger YL intensity in light Si doping GaN.

  2. Visible light induced electron transfer process over nitrogen doped TiO2 nanocrystals prepared by oxidation of titanium nitride

    International Nuclear Information System (INIS)

    Wu Zhongbiao; Dong Fan; Zhao Weirong; Guo Sen

    2008-01-01

    Nitrogen doped TiO 2 nanocrystals with anatase and rutile mixed phases were prepared by incomplete oxidation of titanium nitride at different temperatures. The as-prepared samples were characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM), high resolution transmission electron microscopy (HRTEM), core level X-ray photoelectron spectroscopy (CL XPS), valence band X-ray photoelectron spectroscopy (VB XPS), UV-vis diffuse reflectance spectra (UV-vis DRS), and visible light excited photoluminescence (PL). The photocatalytic activity was evaluated for photocatalytic degradation of toluene in gas phase under visible light irradiation. The visible light absorption and photoactivities of these nitrogen doped TiO 2 nanocrystals can be clearly attributed to the change of the additional electronic (N - ) states above the valence band of TiO 2 modified by N dopant as revealed by the VB XPS and visible light induced PL. A band gap structure model was established to explain the electron transfer process over nitrogen doped TiO 2 nanocrystals under visible light irradiation, which was consistent with the previous theoretical and experimental results. This model can also be applied to understand visible light induced photocatalysis over other nonmetal doped TiO 2

  3. Synthesis, Characterization, and Evaluation of Boron-Doped Iron Oxides for the Photocatalytic Degradation of Atrazine under Visible Light

    Directory of Open Access Journals (Sweden)

    Shan Hu

    2012-01-01

    Full Text Available Photocatalytic degradation of atrazine by boron-doped iron oxides under visible light irradiation was investigated. In this work, boron-doped goethite and hematite were successfully prepared by sol-gel method with trimethylborate as boron precursor. The powders were characterized by XRD, UV-vis diffuse reflectance spectra, and porosimetry analysis. The results showed that boron doping could influence the crystal structure, enlarge the BET surface area, improve light absorption ability, and narrow their band-gap energy. The photocatalytic activity of B-doped iron oxides was evaluated in the degradation of atrazine under the visible light irradiation, and B-doped iron oxides showed higher atrazine degradation rate than that of pristine iron oxides. Particularly, B-doped goethite exhibited better photocatalytic activity than B-doped hematite.

  4. Electronic structure and visible light photocatalysis water splitting property of chromium-doped SrTiO3

    International Nuclear Information System (INIS)

    Liu, J.W.; Chen, G.; Li, Z.H.; Zhang, Z.G.

    2006-01-01

    Cr-doped SrTi 1- x Cr x O 3 (x=0.00, 0.02, 0.05, 0.10) powders, prepared by solvothermal method, were further characterized by ultraviolet-visible (UV-vis) absorption spectroscopy. The UV-vis spectra indicate that the SrTi 1- x Cr x O 3 powders can absorb not only UV light like pure SrTiO 3 powder but also the visible-light spectrum (λ>420 nm). The results of density functional theory (DFT) calculation illuminate that the visible-light absorption bands in the SrTi 1- x Cr x O 3 catalyst are attributed to the band transition from the Cr 3d to the Cr 3d+Ti 3d hybrid orbital. The photocatalytic activities of chromium-doped SrTiO 3 both under UV and visible light are increased with the increase in the amounts of chromium. -- Graphical abstract: SrTi 1- x Cr x O 3 powders, prepared by solvothermal method, can absorb not only UV light like pure SrTiO 3 powder but also the visible-light spectrum (λ>420 nm). The results of DFT calculation illuminate that the visible-light absorption bands in the SrTi 1- x Cr x O 3 catalyst are attributed to the band transition from the Cr 3d to the Cr 3d+Ti 3d hybrid orbital

  5. Eu2+-doped OH− free calcium aluminosilicate glass: A phosphor for smart lighting

    International Nuclear Information System (INIS)

    Lima, S.M.; Andrade, L.H.C.; Rocha, A.C.P.; Silva, J.R.; Farias, A.M.; Medina, A.N.; Baesso, M.L.; Nunes, L.A.O.; Guyot, Y.; Boulon, G.

    2013-01-01

    In this paper, a broad emission band from Eu 2+ -doped OH − free calcium aluminosilicate glass is reported. By changing the excitation wavelengths, the results showed it is possible to tune the emission from green to orange, what combined with the scattered light from the same blue LED used for excitation, provided a color rendering index of 71 and a correlated color temperature of 6550 K. Our preliminary tests indicate this material as a promising phosphor towards the development of smart lighting devices. -- Highlights: • We report a broad emission band from Eu 2+ -doped OH − free calcium aluminosilicate glass. • The maximum emission peak can be tune from green to orange region. • The test with a LED provided a color rendering index of 71 and a correlated color temperature of 6550 K

  6. Robust indirect band gap and anisotropy of optical absorption in B-doped phosphorene.

    Science.gov (United States)

    Wu, Zhi-Feng; Gao, Peng-Fei; Guo, Lei; Kang, Jun; Fang, Dang-Qi; Zhang, Yang; Xia, Ming-Gang; Zhang, Sheng-Li; Wen, Yu-Hua

    2017-12-06

    A traditional doping technique plays an important role in the band structure engineering of two-dimensional nanostructures. Since electron interaction is changed by doping, the optical and electrochemical properties could also be significantly tuned. In this study, density functional theory calculations have been employed to explore the structural stability, and electronic and optical properties of B-doped phosphorene. The results show that all B-doped phosphorenes are stable with a relatively low binding energy. Of particular interest is that these B-doped systems exhibit an indirect band gap, which is distinct from the direct one of pure phosphorene. Despite the different concentrations and configurations of B dopants, such indirect band gaps are robust. The screened hybrid density functional HSE06 predicts that the band gap of B-doped phosphorene is slightly smaller than that of pure phosphorene. Spatial charge distributions at the valence band maximum (VBM) and the conduction band minimum (CBM) are analyzed to understand the features of an indirect band gap. By comparison with pure phosphorene, B-doped phosphorenes exhibit strong anisotropy and intensity of optical absorption. Moreover, B dopants could enhance the stability of Li adsorption on phosphorene with less sacrifice of the Li diffusion rate. Our results suggest that B-doping is an effective way of tuning the band gap, enhancing the intensity of optical absorption and improving the performances of Li adsorption, which could promote potential applications in novel optical devices and lithium-ion batteries.

  7. Partially filled intermediate band of Cr-doped GaN films

    International Nuclear Information System (INIS)

    Sonoda, S.

    2012-01-01

    We investigated the band structure of sputtered Cr-doped GaN (GaCrN) films using optical absorption, photoelectron yield spectroscopy, and charge transport measurements. It was found that an additional energy band is formed in the intrinsic band gap of GaN upon Cr doping, and that charge carriers in the material move in the inserted band. Prototype solar cells showed enhanced short circuit current and open circuit voltage in the n-GaN/GaCrN/p-GaN structure compared to the GaCrN/p-GaN structure, which validates the proposed concept of an intermediate-band solar cell.

  8. Madelung and Hubbard interactions in polaron band model of doped organic semiconductors

    Science.gov (United States)

    Png, Rui-Qi; Ang, Mervin C.Y.; Teo, Meng-How; Choo, Kim-Kian; Tang, Cindy Guanyu; Belaineh, Dagmawi; Chua, Lay-Lay; Ho, Peter K.H.

    2016-01-01

    The standard polaron band model of doped organic semiconductors predicts that density-of-states shift into the π–π* gap to give a partially filled polaron band that pins the Fermi level. This picture neglects both Madelung and Hubbard interactions. Here we show using ultrahigh workfunction hole-doped model triarylamine–fluorene copolymers that Hubbard interaction strongly splits the singly-occupied molecular orbital from its empty counterpart, while Madelung (Coulomb) interactions with counter-anions and other carriers markedly shift energies of the frontier orbitals. These interactions lower the singly-occupied molecular orbital band below the valence band edge and give rise to an empty low-lying counterpart band. The Fermi level, and hence workfunction, is determined by conjunction of the bottom edge of this empty band and the top edge of the valence band. Calculations are consistent with the observed Fermi-level downshift with counter-anion size and the observed dependence of workfunction on doping level in the strongly doped regime. PMID:27582355

  9. High gain L-band erbium-doped fiber amplifier with two-stage ...

    Indian Academy of Sciences (India)

    stage erbium-doped fiber amplifier; amplified spontaneous emission. Abstract. An experiment on gain enhancement in the long wavelength band erbium-doped fiber amplifier (L-band EDFA) is demonstrated using dual forward pumping scheme ...

  10. Electrochemically synthesized visible light absorbing vertically aligned N-doped TiO2 nanotube array films

    International Nuclear Information System (INIS)

    Antony, Rajini P.; Mathews, Tom; Ajikumar, P.K.; Krishna, D. Nandagopala; Dash, S.; Tyagi, A.K.

    2012-01-01

    Graphical abstract: Display Omitted Highlights: ► Single step electrochemical synthesis of N-doped TiO 2 nanotube array films. ► Effective substitutional N-doping achieved. ► Different N-concentrations were achieved by varying the N-precursor concentration in the electrolyte. ► Visible light absorption observed at high N-doping. -- Abstract: Visible light absorbing vertically aligned N-doped anatase nanotube array thin films were synthesized by anodizing Ti foils in ethylene glycol + NH 4 F + water mixture containing urea as nitrogen source. Different nitrogen concentrations were achieved by varying the urea content in the electrolyte. The structure, morphology, composition and optical band gap of the nanotube arrays were determined by X-ray diffraction, scanning electron microscopy, X-ray photoelectron spectroscopy (XPS) and diffuse reflectance spectroscopy, respectively. The substitution of O 2− ions by N 3− ions in the anion sublattice as well as the formulae of the doped samples was confirmed from the results of XPS. The optical band gap of the nanotube arrays was found to decrease with N-concentration. The sample with the highest concentration corresponding to the formula TiO 1.83 N 0.14 showed two regions in the Tauc's plot indicating the presence of interband states.

  11. Preparation of N-doped ZnO-loaded halloysite nanotubes catalysts with high solar-light photocatalytic activity.

    Science.gov (United States)

    Cheng, Zhi-Lin; Sun, Wei

    2015-01-01

    N-doped ZnO nanoparticles were successfully assembled into hollow halloysite nanotubes (HNTs) by using the impregnation method. The catalysts based on N-doped ZnO-loaded HNTs nanocomposites (N-doped ZnO/HNTs) were characterized by X-ray diffraction (XRD), transmission electron microscopy-energy dispersive X-ray (TEM-EDX), scanning electron microscopy-energy dispersive X-ray (SEM-EDX), UV-vis and Fourier transform infrared spectroscopy (FT-IR) techniques. The XRD pattern showed ZnO nanoparticles with hexagonal structure loaded on HNTs. The TEM-EDX analysis indicated ZnO particles with the crystal size of ca.10 nm scattered in hollow structure of HNTs, and furthermore the concentration of N atom in nanocomposites was up to 2.31%. The SEM-EDX verified most of N-ZnO nanoparticles existing in hollow nanotubes of HNTs. Besides containing an obvious ultraviolet absorbance band, the UV-vis spectra of the N-doped ZnO/HNTs catalysts showed an available visible absorbance band by comparing to HNTs and non-doped ZnO/HNTs. The photocatalytic activity of the N-doped ZnO/HNTs catalysts was evaluated by the degradation of methyl orange (MO) solution with the concentration of 20 mg/L under the simulated solar-light irradiation. The result showed that the N-doped ZnO/HNTs catalyst exhibited a desirable solar-light photocatalytic activity.

  12. Enhanced Photocatalytic Activity of La3+-Doped TiO2 Nanotubes with Full Wave-Band Absorption

    Science.gov (United States)

    Xia, Minghao; Huang, Lingling; Zhang, Yubo; Wang, Yongqian

    2018-06-01

    TiO2 nanotubes doped with La3+ were synthesized by anodic oxidation method and the photocatalytic activity was detected by photodegrading methylene blue. As-prepared samples improved the absorption of both ultraviolet light and visible light and have a great enhancement on the photocatalytic activity while contrasting with the pristine TiO2 nanotubes. A tentative mechanism for the enhancement of photocatalytic activity with full wave-band absorption is proposed.

  13. PAMAM templated N,Pt co-doped TiO2 for visible light photodegradation of brilliant black.

    Science.gov (United States)

    Nzaba, Sarre Kadia Myra; Ntsendwana, Bulelwa; Mamba, Bhekie Brilliance; Kuvarega, Alex Tawanda

    2018-05-01

    This study examined the photocatalytic degradation of an azo dye brilliant black (BB) using non-metal/metal co-doped TiO 2 . N,Pt co-doped TiO 2 photocatalysts were prepared by a modified sol-gel method using amine-terminated polyamidoamine dendrimer generation 0 (PG0) as a template and source of nitrogen. Structural, morphological, and textural properties were evaluated using scanning electron microscopy coupled to energy-dispersive X-ray spectroscopy (SEM/EDX), high-resolution transmission electron microscopy (HRTEM), X-ray diffraction spectroscopy (XRD), X-ray photoelectron spectroscopy (XPS), thermal gravimetric analysis (TGA), Fourier transform infrared (FTIR), Raman spectroscopy (RS), photoluminescence (PL) and ultra-violet/visible spectroscopy (UV-Vis). The synthesized photocatalysts exhibited lower band gap energies as compared to the Degussa P-25, revealing a red shift in band gap towards the visible light absorption region. Photocatalytic activity of N,Pt co-doped TiO 2 was measured by the reaction of photocatalytic degradation of BB dye. Enhanced photodegradation efficiency of BB was achieved after 180-min reaction time with an initial concentration of 50 ppm. This was attributed to the rod-like shape of the materials, larger surface area, and enhanced absorption of visible light induced by N,Pt co-doping. The N,Pt co-doped TiO 2 also exhibited pseudo-first-order kinetic behavior with half-life and rate constant of 0.37 and 0.01984 min -1 , respectively. The mechanism of the photodegradation of BB under the visible light irradiation was proposed. The obtained results prove that co-doping of TiO 2 with N and Pt contributed to the enhanced photocatalytic performances of TiO 2 for visible light-induced photodegradation of organic contaminants for environmental remediation. Therefore, this work provides a new approach to the synthesis of PAMAM templated N,Pt co-doped TiO 2 for visible light photodegradation of brilliant black.

  14. The enhanced visible light photocatalytic activity of yttrium-doped BiOBr synthesized via a reactable ionic liquid

    Energy Technology Data Exchange (ETDEWEB)

    He, Minqiang; Li, Weibing [School of Chemistry and Chemical Engineering, Jiangsu University, 301 Xuefu Road, Zhenjiang 212013 (China); Xia, Jiexiang, E-mail: xjx@ujs.edu.cn [School of Chemistry and Chemical Engineering, Jiangsu University, 301 Xuefu Road, Zhenjiang 212013 (China); Xu, Li; Di, Jun [School of Chemistry and Chemical Engineering, Jiangsu University, 301 Xuefu Road, Zhenjiang 212013 (China); Xu, Hui [School of the Environment, Jiangsu University, 301 Xuefu Road, Zhenjiang 212013 (China); Yin, Sheng [School of Chemistry and Chemical Engineering, Jiangsu University, 301 Xuefu Road, Zhenjiang 212013 (China); Li, Huaming, E-mail: lhm@ujs.edu.cn [School of Chemistry and Chemical Engineering, Jiangsu University, 301 Xuefu Road, Zhenjiang 212013 (China); Li, Mengna [School of Chemistry and Chemical Engineering, Jiangsu University, 301 Xuefu Road, Zhenjiang 212013 (China)

    2015-03-15

    Graphical abstract: Yttrium (Y)-doped BiOBr with different Y doping concentrations has been synthesized via solvothermal method in the presence of reactable ionic liquid 1-hexadecyl-3-methylimidazolium bromide ([C16mim]Br). The photocatalytic activities of the yttrium doped BiOBr samples were evaluated by the degradation of ciprofloxacin (CIP) and rhodamine B (RhB) under visible-light irradiation. The yttrium doped BiOBr exhibited enhanced photocatalytic activity for the degradation of the two types of pollutants, and the 5wt%Y-doped BiOBr showed the highest photocatalytic activity. The enhanced photocatalytic performance could be attributed to the reduced band gap and improved separation of electron–hole pairs. - Highlights: • Yttrium (Y)-doped BiOBr composites have been synthesized via solvothermal method in the presence of reactable ionic liquid [C16mim]Br. • The yttrium doped BiOBr exhibited enhanced photocatalytic activity for the degradation of ciprofloxacin (CIP) and rhodamine B (RhB). • The enhanced photocatalytic performance could be attributed to the reduced band gap and improved separation of electron–hole pairs. - Abstract: Yttrium (Y)-doped BiOBr with different Y doping concentrations has been synthesized via solvothermal method in the presence of reactable ionic liquid 1-hexadecyl-3-methylimidazolium bromide ([C{sub 16}mim]Br). Their structures, morphologies and optical properties were characterized by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM), energy-dispersive X-ray spectroscopy (EDS) and UV–vis diffuse reflectance spectroscopy (DRS). The photocatalytic activities of the yttrium doped BiOBr samples were evaluated by the degradation of ciprofloxacin (CIP) and rhodamine B (RhB) under visible-light irradiation. The yttrium doped BiOBr exhibited enhanced photocatalytic activity for the degradation of the two types of pollutants, and the 5wt%Y-doped BiOBr showed the highest

  15. Light-Induced Type-II Band Inversion and Quantum Anomalous Hall State in Monolayer FeSe

    Science.gov (United States)

    Wang, Z. F.; Liu, Zhao; Yang, Jinlong; Liu, Feng

    2018-04-01

    Coupling a quantum anomalous Hall (QAH) state with a superconducting state offers an attractive approach to detect the signature alluding to a topological superconducting state [Q. L. He et al., Science 357, 294 (2017), 10.1126/science.aag2792], but its explanation could be clouded by disorder effects in magnetic doped QAH materials. On the other hand, an antiferromagnetic (AFM) quantum spin Hall (QSH) state is identified in the well-known high-temperature 2D superconductor of monolayer FeSe [Z. F. Wang et al., Nat. Mater. 15, 968 (2016), 10.1038/nmat4686]. Here, we report a light-induced type-II band inversion (BI) and a QSH-to-QAH phase transition in the monolayer FeSe. Depending on the handedness of light, a spin-tunable QAH state with a high Chern number of ±2 is realized. In contrast to the conventional type-I BI resulting from intrinsic spin-orbital coupling (SOC), which inverts the band an odd number of times and respects time reversal symmetry, the type-II BI results from a light-induced handedness-dependent effective SOC, which inverts the band an even number of times and does not respect time reversal symmetry. The interplay between these two SOC terms makes the spin-up and -down bands of an AFM QSH state respond oppositely to a circularly polarized light, leading to the type-II BI and an exotic topological phase transition. Our finding affords an exciting opportunity to detect Majorana fermions in one single material without magnetic doping.

  16. Electronic structures and valence band splittings of transition metals doped GaNs

    International Nuclear Information System (INIS)

    Lee, Seung-Cheol; Lee, Kwang-Ryeol; Lee, Kyu-Hwan

    2007-01-01

    For a practical viewpoint, presence of spin splitting of valence band in host semiconductors by the doping of transition metal (TM) ions is an essential property when designing a diluted magnetic semiconductors (DMS) material. The first principle calculations were performed on the electronic and magnetic structure of 3d transition metal doped GaN. V, Cr, and Mn doped GaNs could not be candidates for DMS materials since most of their magnetic moments is concentrated on the TM ions and the splittings of valence band were negligible. In the cases of Fe, Co, Ni, and Cu doped GaNs, on the contrary, long-ranged spin splitting of valence band was found, which could be candidates for DMS materials

  17. Photocatalytic activity of Sulfer-doped TiO2 fiber under visible light illumination (Joint research)

    International Nuclear Information System (INIS)

    Takeyama, Akinori; Yamamoto, Shunya; Yoshikawa, Masahito; Hasegawa, Yoshio; Awatsu, Satoshi

    2007-03-01

    The Sol-Gel derived precursor fiber was annealed under hydrogen disulfeid (H 2 S) following oxygen atmosphere, Sulfur-doped TiO 2 fiber was obtained. Crystal structure of the fiber was identified as anatase phase of TiO 2 . The energy band gap of the fiber was narrower by about 0.06 eV than that of anatase, which showed that it could absorb visible light. The fiber contains about 0.58 atomic % of Sulfur, and they located at the oxygen lattice site of TiO 2 . Under visible light illumination, the fiber degraded Trichloroethylen (TCE) and produced carbon dioxide (CO 2 ). This shows Sulfur-doped TiO 2 fiber has the photocatalytic activity under visible light illumination. (author)

  18. Visible Light Photoelectrochemical Properties of N-Doped TiO2 Nanorod Arrays from TiN

    Directory of Open Access Journals (Sweden)

    Zheng Xie

    2013-01-01

    Full Text Available N-doped TiO2 nanorod arrays (NRAs were prepared by annealing the TiN nanorod arrays (NRAs which were deposited by using oblique angle deposition (OAD technique. The TiN NRAs were annealed at 330°C for different times (5, 15, 30, 60, and 120 min. The band gaps of annealed TiN NRAs (i.e., N-doped TiO2 NRAs show a significant variance with annealing time, and can be controlled readily by varying annealing time. All of the N-doped TiO2 NRAs exhibit an enhancement in photocurrent intensity in visible light compared with that of pure TiO2 and TiN, and the one annealed for 15 min shows the maximum photocurrent intensity owning to the optimal N dopant concentration. The results show that the N-doped TiO2 NRAs, of which the band gap can be tuned easily, are a very promising material for application in photocatalysis.

  19. Band-gap narrowing of TiO2 films induced by N-doping

    International Nuclear Information System (INIS)

    Nakano, Y.; Morikawa, T.; Ohwaki, T.; Taga, Y.

    2006-01-01

    N-doped TiO 2 films were deposited on n + -GaN/Al 2 O 3 substrates by reactive magnetron sputtering and subsequently crystallized by annealing at 550 o C in flowing N 2 gas. The N-doping concentration was ∼8.8%, as determined from X-ray photoelectron spectroscopy measurements. Deep-level optical spectroscopy measurements revealed two characteristic deep levels located at 1.18 and 2.48 eV below the conduction band. The 1.18 eV level is probably attributable to the O vacancy state and can be active as an efficient generation-recombination center. Additionally, the 2.48 eV band is newly introduced by the N-doping and contributes to band-gap narrowing by mixing with the O 2p valence band

  20. Eu{sup 2+}-doped OH{sup −} free calcium aluminosilicate glass: A phosphor for smart lighting

    Energy Technology Data Exchange (ETDEWEB)

    Lima, S.M., E-mail: smlima@uems.br [Grupo de Espectroscopia Óptica e Fototérmica, Universidade Estadual de Mato Grosso do Sul, C. P. 351, CEP 79804-970 Dourados, MS (Brazil); Andrade, L.H.C.; Rocha, A.C.P. [Grupo de Espectroscopia Óptica e Fototérmica, Universidade Estadual de Mato Grosso do Sul, C. P. 351, CEP 79804-970 Dourados, MS (Brazil); Silva, J.R.; Farias, A.M.; Medina, A.N.; Baesso, M.L. [Departamento de Física, Universidade Estadual de Maringá, Av. Colombo 5790, 87020-900 Maringá, PR (Brazil); Nunes, L.A.O. [Instituto de Física de São Carlos, Universidade de São Paulo, 13560-970 São Carlos, SP (Brazil); Guyot, Y.; Boulon, G. [Laboratoire de Physico-Chimie des Matériaux Luminescents, Université de Lyon 1, UMR 5620 CNRS, 69622 Villeurbanne (France)

    2013-11-15

    In this paper, a broad emission band from Eu{sup 2+}-doped OH{sup −} free calcium aluminosilicate glass is reported. By changing the excitation wavelengths, the results showed it is possible to tune the emission from green to orange, what combined with the scattered light from the same blue LED used for excitation, provided a color rendering index of 71 and a correlated color temperature of 6550 K. Our preliminary tests indicate this material as a promising phosphor towards the development of smart lighting devices. -- Highlights: • We report a broad emission band from Eu{sup 2+}-doped OH{sup −} free calcium aluminosilicate glass. • The maximum emission peak can be tune from green to orange region. • The test with a LED provided a color rendering index of 71 and a correlated color temperature of 6550 K.

  1. Remarkable photo-catalytic degradation of malachite green by nickel doped bismuth selenide under visible light irradiation

    Science.gov (United States)

    Kulsi, Chiranjit; Ghosh, Amrita; Mondal, Anup; Kargupta, Kajari; Ganguly, Saibal; Banerjee, Dipali

    2017-01-01

    Bismuth selenide (Bi2Se3) and nickel (Ni) doped Bi2Se3 were prepared by a solvothermal approach to explore the photo-catalytic performance of the materials in degradation of malachite green (MG). The presence of nickel was confirmed by X-ray photoelectron spectroscopy (XPS) measurement in doped Bi2Se3. The results showed that the nickel doping played an important role in microstructure and photo-catalytic activity of the samples. Nickel doped Bi2Se3 sample exhibited higher photo-catalytic activity than that of the pure Bi2Se3 sample under visible-light irradiation. The photo-catalytic degradation followed first-order reaction kinetics. Fast degradation kinetics and complete (100% in 5 min of visible light irradiation) removal of MG was achieved by nickel doped Bi2Se3 in presence of hydrogen peroxide (H2O2) due to modification of band gap energies leading to suppression of photo-generated electron-hole recombination.

  2. Facile synthesis of cobalt-doped zinc oxide thin films for highly efficient visible light photocatalysts

    Energy Technology Data Exchange (ETDEWEB)

    Altintas Yildirim, Ozlem, E-mail: ozlemaltintas@gmail.com [Department of Metallurgical and Materials Engineering, Selcuk University, Konya (Turkey); Arslan, Hanife; Sönmezoğlu, Savaş [Department of Metallurgical and Materials Engineering, Karamanoglu Mehmetbey University, Karaman (Turkey); Nanotechnology R& D Laboratory, Karamanoglu Mehmetbey University, Karaman (Turkey)

    2016-12-30

    Highlights: • Photocatalytically active Co-ZnO thin film was obtained by sol-gel method. • Co{sup 2+} doping narrowed the band gap of pure ZnO to an extent of 3.18 eV. • Co-ZnO was effective in MB degradation under visible light. • Optimum dopant content to show high performance was 3 at.%. - Abstract: Cobalt-doped zinc oxide (Co:ZnO) thin films with dopant contents ranging from 0 to 5 at.% were prepared using the sol–gel method, and their structural, morphological, optical, and photocatalytic properties were characterized. The effect of the dopant content on the photocatalytic properties of the films was investigated by examining the degradation behavior of methylene blue (MB) under visible light irradiation, and a detailed investigation of their photocatalytic activities was performed by determining the apparent quantum yields (AQYs). Co{sup 2+} ions were observed to be substitutionally incorporated into Zn{sup 2+} sites in the ZnO crystal, leading to lattice parameter constriction and band gap narrowing due to the photoinduced carriers produced under the visible light irradiation. Thus, the light absorption range of the Co:ZnO films was improved compared with that of the undoped ZnO film, and the Co:ZnO films exhibited highly efficient photocatalytic activity (∼92% decomposition of MB after 60-min visible light irradiation for the 3 at.% Co:ZnO film). The AQYs of the Co:ZnO films were greatly enhanced under visible light irradiation compared with that of the undoped ZnO thin film, demonstrating the effect of the Co doping level on the photocatalytic activity of the films.

  3. Tunable light emission and similarities with garnet structure of Ce-doped LSCAS glass for white-light devices

    Energy Technology Data Exchange (ETDEWEB)

    Andrade, L.H.C., E-mail: luishca@uems.br [Grupo de Espectroscopia Optica e Fototermica, Universidade Estadual de Mato Grosso do Sul - UEMS, C.P. 351, Dourados, MS (Brazil); Lima, S.M. [Grupo de Espectroscopia Optica e Fototermica, Universidade Estadual de Mato Grosso do Sul - UEMS, C.P. 351, Dourados, MS (Brazil); Baesso, M.L.; Novatski, A.; Rohling, J.H. [Grupo de Estudos de Fenomenos Fototermicos, Departamento de Fisica, Universidade Estadual de Maringa, Av. Colombo 5790, 87020-900 Maringa, PR (Brazil); Guyot, Y.; Boulon, G. [Laboratoire de Physico-Chimie des Materiaux Luminescents, Universite Claude Bernard Lyon 1, UMR 5620 CNRS, 69622 Villeurbanne (France)

    2012-01-05

    Highlights: > Ce{sup 3+}-doped LSCAS glass exhibits broad, simultaneously blue and yellow emissions under UV excitation. > In this phosphor is possible to continuously tune the emission, covering the entire visible spectrum. > The ability to change the color temperature in accordance to the occasion is a feature of this glass system. - Abstract: In this paper, we report results concerning tunable light emission and color temperature in cerium-doped low-silica-calcium-alumino-silicate (LSCAS) glass for smart white-light devices. Spectroscopic results, analyzed using the CIE 1931 x-y chromatic diagram, show that this glass presents two broad emission bands centered at 475 and 540 nm, whose intensities can be tuned by the excitation wavelength. Moreover, the same emission can be achieved from a color temperature range from 3200 to 10,000 K, with a color-rendering index (CRI) of around 75% obtained by changing the optical path length of the sample. Our new phosphor LSCAS glass, which is a unique system that exhibits tunable yellow emission, combines all qualities for white-light devices.

  4. Broad band and enhanced photocatalytic behaviour of Ho3+-doped Bi2O3 micro-rods

    Science.gov (United States)

    Prasad, Neena; Karthikeyan, Balasubramanian

    2018-06-01

    Band-gap-tuned Bi2O3 micro-rods were synthesized using simple co-precipitation method by doping 5 wt% Ho3+ to mitigate the concentration of toxic dye from the polluted water using it as a photocatalyst. Structure and morphology of the prepared samples were identified using powder X-ray diffraction technique and scanning electron microscopy (SEM). Elemental composition and chemical state of the prepared samples were analyzed from the X-ray photoelectron spectroscopy (XPS). Considerable absorption in IR region was observed for Ho3+ doped Bi2O3 due to the electronic transitions of 5I8→5F4, 5I8→5F5, and 5I8→5I5, 5I6. The excellent ultra-violet (UV), white and infrared light (IR)-driven photocatalytic activity were suggested for pure and doped Bi2O3 samples. Ho3+-doped Bi2O3 micro-rods exhibits a better photocatalytic activity under white light irradiation. The consequence of the bandgap and the synergetic effect of Ho3+ and Bi2O3 on the photocatalytic degradation of MB were investigated.

  5. Gain claming in single-pass and double-pass L-band erbium-doped fiber amplifiers

    International Nuclear Information System (INIS)

    Harun, S.W.; Ahmad, H.

    2004-01-01

    Gain clamping is demonstrated in single-pass and double-pass long wavelength band erbium-doped fiber amplifiers. A C/L-band wavelength division multiplexing coupler is used in single-pass system to generate a laser at 1566 nm. The gain for the amplifier is clamped at 15.5 dB with gain variation of less than 0.2 dB from input signal power of -40 to -14 dBm with almost negligible noise figure penalty. However, the flatness of gain spectrum is slightly degraded due to the un-optimisation of erbium-doped fiber length. The advantage of this configuration is that the oscillating light does not appear at the output of the amplifier. A highly efficient gain-clamped long wavelength band erbium-doped fiber amplifiers with improved noise figure characteristic is demonstrated by simply adding a broadband conventional band fiber Bragg grating in double pass system. The combination of the fiber Bragg grating and optical circulator has created laser in the cavity for gain clamping. By adjusting the power combination of pumps 1 and 2, the clamped gain level can be controlled. The amplifier gain is clamped at 28.1 dB from -40 to -25 dBm with gain variation of less than 0.5 dB by setting the pumps 1 and 2 at 59.5 and 50.6 mW, respectively. The gain is also flat from 1574 nm to 1604 nm with gain variation of less than 3 dB. The corresponding noise figure varies from 5.6 to 7.6 dB, which is 0.8 to 2.6 dB reduced compared to those of unclamped amplifier (Authors)

  6. Ultraviolet electroluminescence from nitrogen-doped ZnO-based heterojuntion light-emitting diodes prepared by remote plasma in situ atomic layer-doping technique.

    Science.gov (United States)

    Chien, Jui-Fen; Liao, Hua-Yang; Yu, Sheng-Fu; Lin, Ray-Ming; Shiojiri, Makoto; Shyue, Jing-Jong; Chen, Miin-Jang

    2013-01-23

    Remote plasma in situ atomic layer doping technique was applied to prepare an n-type nitrogen-doped ZnO (n-ZnO:N) layer upon p-type magnesium-doped GaN (p-GaN:Mg) to fabricate the n-ZnO:N/p-GaN:Mg heterojuntion light-emitting diodes. The room-temperature electroluminescence exhibits a dominant ultraviolet peak at λ ≈ 370 nm from ZnO band-edge emission and suppressed luminescence from GaN, as a result of the decrease in electron concentration in ZnO and reduced electron injection from n-ZnO:N to p-GaN:Mg because of the nitrogen incorporation. The result indicates that the in situ atomic layer doping technique is an effective approach to tailoring the electrical properties of materials in device applications.

  7. Facile synthesis of Sm-doped BiFeO{sub 3} nanoparticles for enhanced visible light photocatalytic performance

    Energy Technology Data Exchange (ETDEWEB)

    Hu, Zijun; Chen, Da, E-mail: dchen_80@hotmail.com; Wang, Sen; Zhang, Ning; Qin, Laishun, E-mail: qinlaishun@cjlu.edu.cn; Huang, Yuexiang

    2017-06-15

    Highlights: • Effective Sm doping into BiFeO{sub 3} nanoparticles was obtained by a facile sol-gel route. • Band gap of Sm-doped BiFeO{sub 3} nanoparticles was regulated by the dopant concentration. • Sm-doped BiFeO{sub 3} nanoparticles exhibited superior photocatalytic activities. • The possible photocatalytic mechanism of Sm-doped BiFeO{sub 3} nanospheres was discussed. - Abstract: In this work, the effect of Sm doping on the structural and photocatalytic properties of BiFeO{sub 3} (BFO) was investigated. A series of Sm doped BFO nanoparticles containing different Sm dopant contents (Bi{sub (1−x)}Sm{sub x}FeO{sub 3}, x = 0.00, 0.01, 0.03, 0.05, 0.07, 0.10) were synthesized via a simple sol-gel route. It was revealed that Sm{sup 3+} ions were successfully doped into BFO nanoparticles, and the band gap value was gradually decreased when increasing Sm dopant concentration. The photocatalytic activity of Sm-doped BFO photocatalyst was significantly affected by the Sm doping content. Compared to pure BFO, the Sm-doped BFO samples exhibited much higher photocatalytic activity. The improved photocatalytic activity of Sm-doped BFO could be attributed to the enhanced visible light absorption and the efficient separation of photogenerated electrons and holes derived from Sm dopant trapping level in the Sm-doped BFO samples. In addition, the possible photocatalytic mechanism of Sm-doped BFO photocatalyst was also proposed.

  8. Band gap narrowing and fluorescence properties of nickel doped SnO2 nanoparticles

    International Nuclear Information System (INIS)

    Ahmed, Arham S.; Shafeeq, M. Muhamed; Singla, M.L.; Tabassum, Sartaj; Naqvi, Alim H.; Azam, Ameer

    2011-01-01

    Nickel-doped tin oxide nanoparticles (sub-5 nm size) with intense fluorescence emission behavior have been synthesized by sol-gel route. The structural and compositional analysis has been carried out by using XRD, TEM, FESEM and EDAX. The optical absorbance spectra indicate a band gap narrowing effect and it was found to increase with the increase in nickel concentration. The band gap narrowing at low dopant concentration ( 2 -SnO 2-x alloying effect and for higher doping it may be due to the formation of defect sub-bands below the conduction band.

  9. Doped Sc2C(OH)2 MXene: new type s-pd band inversion topological insulator.

    Science.gov (United States)

    Balcı, Erdem; Akkuş, Ünal Özden; Berber, Savas

    2018-04-18

    The electronic structures of Si and Ge substitutionally doped Sc 2 C(OH) 2 MXene monolayers are investigated in density functional theory. The doped systems exhibit band inversion, and are found to be topological invariants in Z 2 theory. The inclusion of spin orbit coupling results in band gap openings. Our results point out that the Si and Ge doped Sc 2 C(OH) 2 MXene monolayers are topological insulators. The band inversion is observed to have a new mechanism that involves s and pd states.

  10. Doped Sc2C(OH)2 MXene: new type s-pd band inversion topological insulator

    Science.gov (United States)

    Balcı, Erdem; Özden Akkuş, Ünal; Berber, Savas

    2018-04-01

    The electronic structures of Si and Ge substitutionally doped Sc2C(OH)2 MXene monolayers are investigated in density functional theory. The doped systems exhibit band inversion, and are found to be topological invariants in Z 2 theory. The inclusion of spin orbit coupling results in band gap openings. Our results point out that the Si and Ge doped Sc2C(OH)2 MXene monolayers are topological insulators. The band inversion is observed to have a new mechanism that involves s and pd states.

  11. Facile synthesis and characterization of N-doped TiO2/C nanocomposites with enhanced visible-light photocatalytic performance

    Science.gov (United States)

    Jia, Tiekun; Fu, Fang; Yu, Dongsheng; Cao, Jianliang; Sun, Guang

    2018-02-01

    Ultrafine anatase N-doped TiO2 nanocrystals modified with carbon (denoted as N-doped TiO2/C) were successfully prepared via a facile and low-cost approach, using titanium tetrachloride, aqueous ammonia and urea as starting materials. The phase composition, surface chemical composition, morphological structure, electronic and optical properties of the as-prepared photocatalysts were well characterized and analyzed. On the basis of Raman spectral characterization combining with the results of X-ray photoelectron spectroscopy (XPS) and high resolution transmission electron microscopy (HRTEM), it could be concluded that N dopant ions were successfully introduced into TiO2 crystal lattice and carbon species were modified on the surface or between the nanoparticles to form N-doped TiO2/C nanocomposites. Compared with that of bare TiO2, the adsorption band edge of N-doped TiO2/C nanocomposites were found to have an evident red-shift toward visible light region, implying that the bandgap of N-doped TiO2/C nanocomposites is narrowed and the visible light absorption capacity is significantly enhanced due to N doping and carbon modification. The photoactivity of the as-prepared photocatalytsts was tested by the degradation of Rhodamine B (RhB) under visible light (λ > 420 nm), and the results showed that the N-doped TiO2/C nanocomposites exhibited much higher photodegradation rate than pure TiO2 and N-doped TiO2, which was mainly attributed to the synergistic effect of the enhanced light harvesting, augmented catalytic active sites and efficient separation of photogenerated electron-hole pairs.

  12. Silicon rich nitride ring resonators for rare - earth doped telecommunications-band amplifiers pumped at the O-band.

    Science.gov (United States)

    Xing, P; Chen, G F R; Zhao, X; Ng, D K T; Tan, M C; Tan, D T H

    2017-08-22

    Ring resonators on silicon rich nitride for potential use as rare-earth doped amplifiers pumped at 1310 nm with amplification at telecommunications-band are designed and characterized. The ring resonators are fabricated on 300 nm and 400 nm silicon rich nitride films and characterized at both 1310 nm and 1550 nm. We demonstrate ring resonators exhibiting similar quality factors exceeding 10,000 simultaneously at 1310 nm and 1550 nm. A Dysprosium-Erbium material system exhibiting photoluminescence at 1510 nm when pumped at 1310 nm is experimentally demonstrated. When used together with Dy-Er co-doped particles, these resonators with similar quality factors at 1310 nm and 1550 nm may be used for O-band pumped amplifiers for the telecommunications-band.

  13. Enhancing visible light photocatalytic and photocharge separation of (BiO)_2CO_3 plate via dramatic I"− ions doping effect

    International Nuclear Information System (INIS)

    Liang, Lei; Cao, Jing; Lin, Haili; Guo, Xiaomin; Zhang, Meiyu; Chen, Shifu

    2016-01-01

    Highlights: • Novel I-(BiO)_2CO_3 was prepared by a facile chemical precipitation method. • I"− ions impurity level located on the top of valence band of (BiO)_2CO_3. • I"− ions doping largely improved photocatalytic activity of I-(BiO)_2CO_3. • I-(BiO)_2CO_3 displayed excellent photocharge separation efficiency. - Abstract: Novel I"− ions doped (BiO)_2CO_3 (I-(BiO)_2CO_3) photocatalysts were successfully synthesized via a facile chemical precipitation method. Under visible light (λ > 400 nm), I-(BiO)_2CO_3 displayed much higher activity for rhodamine B and dichlorophenol degradation than the undoped (BiO)_2CO_3. The pseudo-first-order rate constant k_a_p_p of RhB degradation over 15.0% I-(BiO)_2CO_3 was 0.54 h"−"1, which is 11.3 times higher than that of (BiO)_2CO_3. The doped I"− ions formed an impurity level on the top of valence band of (BiO)_2CO_3 and induced much more visible light to be absorbed. The enhanced photocurrent and surface photovoltage properties were detected, which strongly ensures the efficient separation of electrons and holes in I-(BiO)_2CO_3 system under visible light. It provides a facile way to improve the photocatalytic activity of the wide-band-gap (BiO)_2CO_3 via intense doping effect of I"− ions.

  14. Analysis of optical band-gap shift in impurity doped ZnO thin films by using nonparabolic conduction band parameters

    International Nuclear Information System (INIS)

    Kim, Won Mok; Kim, Jin Soo; Jeong, Jeung-hyun; Park, Jong-Keuk; Baik, Young-Jun; Seong, Tae-Yeon

    2013-01-01

    Polycrystalline ZnO thin films both undoped and doped with various types of impurities, which covered the wide carrier concentration range of 10 16 –10 21 cm −3 , were prepared by magnetron sputtering, and their optical-band gaps were investigated. The experimentally measured optical band-gap shifts were analyzed by taking into account the carrier density dependent effective mass determined by the first-order nonparabolicity approximation. It was shown that the measured shifts in optical band-gaps in ZnO films doped with cationic dopants, which mainly perturb the conduction band, could be well represented by theoretical estimation in which the band-gap widening due to the band-filling effect and the band-gap renormalization due to the many-body effect derived for a weakly interacting electron-gas model were combined and the carrier density dependent effective mass was incorporated. - Highlights: ► Optical band-gaps of polycrystalline ZnO thin films were analyzed. ► Experimental carrier concentration range covered from 10 16 to 10 21 cm −3 . ► Nonparabolic conduction band parameters were used in theoretical analysis. ► The band-filling and the band-gap renormalization effects were considered. ► The measured optical band-gap shifts corresponded well with the calculated ones

  15. Novel chromium doped perovskites A{sub 2}ZnTiO{sub 6} (A = Pr, Gd): Synthesis, crystal structure and photocatalytic activity under simulated solar light irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Zhu, Hekai [Beijing Key Laboratory of Materials Utilization of Nonmetallic Minerals and Solid Wastes, National Laboratory of Mineral Materials, School of Materials Science and Technology, China University of Geosciences, Beijing 100083 (China); Fang, Minghao, E-mail: fmh@cugb.edu.cn [Beijing Key Laboratory of Materials Utilization of Nonmetallic Minerals and Solid Wastes, National Laboratory of Mineral Materials, School of Materials Science and Technology, China University of Geosciences, Beijing 100083 (China); Huang, Zhaohui, E-mail: huang118@cugb.edu.cn [Beijing Key Laboratory of Materials Utilization of Nonmetallic Minerals and Solid Wastes, National Laboratory of Mineral Materials, School of Materials Science and Technology, China University of Geosciences, Beijing 100083 (China); Liu, Yan’gai [Beijing Key Laboratory of Materials Utilization of Nonmetallic Minerals and Solid Wastes, National Laboratory of Mineral Materials, School of Materials Science and Technology, China University of Geosciences, Beijing 100083 (China); Chen, Kai [National Engineering Research Center for Rare Earth Materials, General Research Institute For Nonferrous Metals, Grirem Advanced Materials Co.,Ltd., Beijing 100088 (China); Guan, Ming; Tang, Chao; Zhang, Lina; Wang, Meng [Beijing Key Laboratory of Materials Utilization of Nonmetallic Minerals and Solid Wastes, National Laboratory of Mineral Materials, School of Materials Science and Technology, China University of Geosciences, Beijing 100083 (China)

    2017-01-30

    Highlights: • Novel Cr doped A{sub 2}ZnTiO{sub 6} (A = Pr, Gd) photocatalysts were successfully synthesized. • The light absorbance and photocatalytic activity are enhanced through Cr doping. • The photocatalytic reaction mechanism of these photocatalyst was investigated. - Abstract: Double perovskite related oxides A{sub 2}ZnTiO{sub 6} (A = Pr, Gd) have been successfully synthesized by solid state reaction and investigated as photocatalysts for the first time. The two layered titanates mainly demonstrate absorbances under UV irradiation, except for several sharp absorption bands above 400 nm for Pr{sub 2}ZnTiO{sub 6}. Therefore, a series of photocatalysts by doping A{sub 2}ZnTiO{sub 6} (A = Pr, Gd) with Cr have been developed in the hope to improve their absorption in the visible light region. The successful incorporation of Cr was detected by XRD and XPS, and the prepared samples have also been characteriazed by SEM, UV–vis DRS and PL. The characterization results suggested that Cr was present mainly in the form of Cr3+, with only a small amount of Cr6+ species. It served as an efficient dopant for the extension of visible light absorbance and improved photocatalytic activities under solar light irradiation. For both Pr{sub 2}ZnTiO{sub 6} and Gd{sub 2}ZnTiO{sub 6}, the valence band (VB) was composed of hybridized states of the Zn 3d, O 2p and the conduction band (CB) has major contribution from Zn 4s, Ti 3d orbitals. For Cr doped samples, the newly formed spin-polarized valence band in the middle of the band gap that primarily arises from Cr 3d orbitals was responsible for the improved optical and photocatalytic properties.

  16. Band gap narrowing and fluorescence properties of nickel doped SnO{sub 2} nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    Ahmed, Arham S; Shafeeq, M Muhamed [Centre of Excellence in Materials Science (Nanomaterials), Department of Applied Physics, Z. H. College of Engineering and Technology, Aligarh Muslim University, Aligarh-202002 (India); Singla, M L [Central Scientific Instruments Organization (CSIO), Council of Scientific and Industrial Research (CSIR), Materials Research and Bio-Nanotechnology Division, Sector - 30/C, Chandigarh-160030 (India); Tabassum, Sartaj [Department of Chemistry, Aligarh Muslim University, Aligarh-202002 (India); Naqvi, Alim H [Centre of Excellence in Materials Science (Nanomaterials), Department of Applied Physics, Z. H. College of Engineering and Technology, Aligarh Muslim University, Aligarh-202002 (India); Azam, Ameer [Centre of Excellence in Materials Science (Nanomaterials), Department of Applied Physics, Z. H. College of Engineering and Technology, Aligarh Muslim University, Aligarh-202002 (India)

    2011-01-15

    Nickel-doped tin oxide nanoparticles (sub-5 nm size) with intense fluorescence emission behavior have been synthesized by sol-gel route. The structural and compositional analysis has been carried out by using XRD, TEM, FESEM and EDAX. The optical absorbance spectra indicate a band gap narrowing effect and it was found to increase with the increase in nickel concentration. The band gap narrowing at low dopant concentration (<5%) can be assigned to SnO{sub 2}-SnO{sub 2-x} alloying effect and for higher doping it may be due to the formation of defect sub-bands below the conduction band.

  17. Remarkable photo-catalytic degradation of malachite green by nickel doped bismuth selenide under visible light irradiation

    International Nuclear Information System (INIS)

    Kulsi, Chiranjit; Ghosh, Amrita; Mondal, Anup; Kargupta, Kajari; Ganguly, Saibal; Banerjee, Dipali

    2017-01-01

    Highlights: • Bi_2Se_3 and Ni doped Bi_2Se_3 were synthesized by solvothermal approach. • Presence of nickel was confirmed by X-ray photoelectron spectroscopy (XPS) measurement. • Complete degradation of malachite green (MG) dye was achieved by Ni doped Bi_2Se_3 with H_2O_2. • Remarkable photo-catalytic degradation by doped bismuth selenide has been explained. • Scavenger tests show degradation of MG is mainly dominated by ·OH oxidation process. - Abstract: Bismuth selenide (Bi_2Se_3) and nickel (Ni) doped Bi_2Se_3 were prepared by a solvothermal approach to explore the photo-catalytic performance of the materials in degradation of malachite green (MG). The presence of nickel was confirmed by X-ray photoelectron spectroscopy (XPS) measurement in doped Bi_2Se_3. The results showed that the nickel doping played an important role in microstructure and photo-catalytic activity of the samples. Nickel doped Bi_2Se_3 sample exhibited higher photo-catalytic activity than that of the pure Bi_2Se_3 sample under visible-light irradiation. The photo-catalytic degradation followed first-order reaction kinetics. Fast degradation kinetics and complete (100% in 5 min of visible light irradiation) removal of MG was achieved by nickel doped Bi_2Se_3 in presence of hydrogen peroxide (H_2O_2) due to modification of band gap energies leading to suppression of photo-generated electron-hole recombination.

  18. Doping-dependent quasiparticle band structure in cuprate superconductors

    NARCIS (Netherlands)

    Eder, R; Ohta, Y.; Sawatzky, G.A

    1997-01-01

    We present an exact diagonalization study of the single-particle spectral function in the so-called t-t'-t ''-J model in two dimensions. As a key result, we find that hole doping leads to a major reconstruction of the quasiparticle band structure near (pi,0): whereas for the undoped system the

  19. Luminescence- and nanoparticle-mediated increase of light absorption by photoreceptor cells: Converting UV light to visible light

    OpenAIRE

    Li, Lei; Sahi, Sunil K.; Peng, Mingying; Lee, Eric B.; Ma, Lun; Wojtowicz, Jennifer L.; Malin, John H.; Chen, Wei

    2016-01-01

    We developed new optic devices ? singly-doped luminescence glasses and nanoparticle-coated lenses that convert UV light to visible light ? for improvement of visual system functions. Tb3+ or Eu3+ singly-doped borate glasses or CdS-quantum dot (CdS-QD) coated lenses efficiently convert UV light to 542?nm or 613?nm wavelength narrow-band green or red light, or wide-spectrum white light, and thereby provide extra visible light to the eye. In zebrafish (wild-type larvae and adult control animals,...

  20. Investigation of p-type depletion doping for InGaN/GaN-based light-emitting diodes

    Science.gov (United States)

    Zhang, Yiping; Zhang, Zi-Hui; Tan, Swee Tiam; Hernandez-Martinez, Pedro Ludwig; Zhu, Binbin; Lu, Shunpeng; Kang, Xue Jun; Sun, Xiao Wei; Demir, Hilmi Volkan

    2017-01-01

    Due to the limitation of the hole injection, p-type doping is essential to improve the performance of InGaN/GaN multiple quantum well light-emitting diodes (LEDs). In this work, we propose and show a depletion-region Mg-doping method. Here we systematically analyze the effectiveness of different Mg-doping profiles ranging from the electron blocking layer to the active region. Numerical computations show that the Mg-doping decreases the valence band barrier for holes and thus enhances the hole transportation. The proposed depletion-region Mg-doping approach also increases the barrier height for electrons, which leads to a reduced electron overflow, while increasing the hole concentration in the p-GaN layer. Experimentally measured external quantum efficiency indicates that Mg-doping position is vitally important. The doping in or adjacent to the quantum well degrades the LED performance due to Mg diffusion, increasing the corresponding nonradiative recombination, which is well supported by the measured carrier lifetimes. The experimental results are well numerically reproduced by modifying the nonradiative recombination lifetimes, which further validate the effectiveness of our approach.

  1. Origin of the Enhanced Visible-Light Absorption in N-Doped Bulk Anatase TiO 2 from First-Principles Calculations

    KAUST Repository

    Harb, Moussab; Sautet, P.; Raybaud, P.

    2011-01-01

    unambiguously that the diamagnetic TiO(2-3x)N2x system exhibits the enhanced optical absorption in N-doped TiO2 under visible-light irradiation. Electronic analysis further reveals a band gap narrowing of 0.6 eV induced by delocalized impurity states located

  2. Visible Discrimination of Broadband Infrared Light by Dye-Enhanced Upconversion in Lanthanide-Doped Nanocrystals

    Directory of Open Access Journals (Sweden)

    Charles G. Dupuy

    2014-01-01

    Full Text Available Optical upconversion of near infrared light to visible light is an attractive way to capture the optical energy or optical information contained in low-energy photons that is otherwise lost to the human eye or to certain photodetectors and solar cells. Until the recent application of broadband absorbing optical antennas, upconversion efficiency in lanthanide-doped nanocrystals was limited by the weak, narrow atomic absorption of a handful of sensitizer elements. In this work, we extend the role of the optical antenna to provide false-color, visible discrimination between bands of infrared radiation. By pairing different optical antenna dyes to specific nanoparticle compositions, unique visible emission is associated with different bands of infrared excitation. In one material set, the peak emission was increased 10-fold, and the width of the spectral response was increased more than 10-fold.

  3. Continuously tunable S and C+L bands ultra wideband erbium-doped fiber ring laser

    International Nuclear Information System (INIS)

    Wang, Q; Yu, Q X

    2009-01-01

    This paper presents an ultra wideband tunable silica-based erbium doped fiber ring laser (EDFRL) that can be continuously tuned in S and C+L bands from 1475 to 1619 nm. It is the first time that a fiber ring laser's tuning range reaches 144 nm using a standard silica-based C-band erbium-doped fiber as gain media. In the laser configuration two isolators are used in the fiber loop for suppressing the ASE in C-band and elevating the lasing gain in S-band. As a result the available lasing wavelength is extended toward the shorter wavelength of the gain bandwidth. The optimized erbium-doped fiber length, output coupling ratio and pumping laser power have been obtained through experimental study. This ring fiber laser has simple configuration, low threshold, flat laser spectral distribution and high signal-to-ASE-noise ratio. The laser will have many potential applications in fiber sensor wavelength interrogation, high-resolution spectroscopy and fiber optic communications

  4. Photocatalytic Properties of Tin Oxide and Antimony-Doped Tin Oxide Nanoparticles

    Directory of Open Access Journals (Sweden)

    J. C. M. Brokken-Zijp

    2011-01-01

    Full Text Available For the first time it is shown that N-doped SnO2 nanoparticles photocatalyze directly the polymerization of the C=C bonds of (methacrylates under visible light illumination. These radical polymerizations also occur when these particles are doped with Sb and when the surfaces of these particles are grafted with methacrylate (MPS groups. During irradiation with visible or UV light the position and/or intensity of the plasmon band absorption of these nanoparticles are always changed, suggesting that the polymerization starts by the transfer of an electron from the conduction band of the particle to the (methacrylate C=C bond. By using illumination wavelengths with a very narrow band width we determined the influence of the incident wavelength of light, the Sb- and N-doping, and the methacrylate (MPS surface grafting on the quantum efficiencies for the initiating radical formation (Φ and on the polymer and particle network formation. The results are explained by describing the effects of Sb-doping, N-doping, and/or methacrylate surface grafting on the band gaps, energy level distributions, and surface group reactivities of these nanoparticles. N-doped (MPS grafted SnO2 (Sb ≥ 0% nanoparticles are new attractive photocatalysts under visible as well as UV illumination.

  5. Band gap tunning in BN-doped graphene systems with high carrier mobility

    KAUST Repository

    Kaloni, T. P.

    2014-02-17

    Using density functional theory, we present a comparative study of the electronic properties of BN-doped graphene monolayer, bilayer, trilayer, and multilayer systems. In addition, we address a superlattice of pristine and BN-doped graphene. Five doping levels between 12.5% and 75% are considered, for which we obtain band gaps from 0.02 eV to 2.43 eV. We demonstrate a low effective mass of the charge carriers.

  6. Study on activities of vanadium (IV/V) doped TiO2(R) nanorods induced by UV and visible light

    International Nuclear Information System (INIS)

    Li, Li; Liu Chunyan; Liu Yun

    2009-01-01

    Vanadium (IV/V) doped rutile TiO 2 naonorods had been successfully synthesized through a single step hydrothermal method. The photocatalyst was characterized by transmission electron microscopy (TEM), selected area electron diffraction (SAED), high-resolution transmission electron microscopy (HRTEM), X-ray diffraction (XRD), UV-vis diffusive reflectance spectroscopy (DRS) and X-ray photoelectron spectroscopy (XPS). The results showed that the doping of V ions had significant influence on the band gap energy and the surface state of TiO 2 . The photo-activities of the new catalysts were investigated under ultraviolet (UV) and visible light. The UV-photocatalytic activity of the as-prepared catalysts was hardly influenced by doping V ions; while under visible light, the samples with 1 wt% and 0.1 wt% V exhibited enhanced activity to the oxidation of methylene blue (MB) and the reduction of Cr (VI), respectively

  7. Discrete impurity band from surface danging bonds in nitrogen and phosphorus doped SiC nanowires

    Science.gov (United States)

    Li, Yan-Jing; Li, Shu-Long; Gong, Pei; Li, Ya-Lin; Cao, Mao-Sheng; Fang, Xiao-Yong

    2018-04-01

    The electronic structure and optical properties of the nitrogen and phosphorus doped silicon carbide nanowires (SiCNWs) are investigated using first-principle calculations based on density functional theory. The results show doping can change the type of the band gap and improve the conductivity. However, the doped SiCNWs form a discrete impurity levels at the Fermi energy, and the dispersion degree decreases with the diameter increasing. In order to reveal the root of this phenomenon, we hydrogenated the doped SiCNWs, found that the surface dangling bonds were saturated, and the discrete impurity levels are degeneracy, which indicates that the discrete impurity band of the doped SiCNWs is derived from the dangling bonds. The surface passivation can degenerate the impurity levels. Therefore, both doping and surface passivation can better improve the photoelectric properties of the SiCNWs. The result can provide additional candidates in producing nano-optoelectronic devices.

  8. Recyclable UV and visible light photocatalytically active amorphous TiO2 doped with M (III) ions (M = Cr and Fe)

    International Nuclear Information System (INIS)

    Buddee, Supat; Wongnawa, Sumpun; Sirimahachai, Uraiwan; Puetpaibool, Walailak

    2011-01-01

    Research highlights: → The low photocatalytic activity of amorphous TiO2 was enhanced by doping with Cr(III) or Fe(III) ions. → The doped catalysts performed close to P25 under UV light and better with visible light. → The doped catalysts can be recycled. - Abstract: Samples of amorphous TiO 2 doped with Cr(III) and Fe(III), designated as Cr-TiO 2 and Fe-TiO 2 , were prepared via modified impregnation method. The resulting products were characterized by X-ray diffraction, scanning electron microscopy, specific surface area by the Brunauer, Emmett and Teller method, UV-vis absorption and diffuse reflectance spectroscopy, and electron spin resonance spectroscopy. Experimental results revealed that the concentrations of dopants under studied, from 0.05 to 0.2 mol%, had no effect on the phase of products. The band gap energies shifted from 3.28 eV in the undoped amorphous TiO 2 to 2.50 eV and 2.86 eV for Fe-TiO 2 and Cr-TiO 2 , respectively. The doped amorphous TiO 2 showed photocatalytic activities under both UV and visible light with optimal results at 0.1 mol% dopants. Under UV irradiation, the 0.1 mol% doped samples decolorized methylene blue solutions to the same extent as the commercial TiO 2 samples (P25 and anatase) in 5 h. Under visible light, the doped samples decolorized dye solutions in 12 h while the commercial ones were much less active. The used catalysts can be recycled many times without any special treatment.

  9. Polarization catastrophe in nanostructures doped in photonic band gap materials

    Energy Technology Data Exchange (ETDEWEB)

    Singh, Mahi R. [Department of Physics and Astronomy, University of Western Ontario, London N6A 3K7 (Canada)], E-mail: msingh@uwo.ca

    2008-11-30

    In the presence of the dipole-dipole interaction, we have studied a possible dielectric catastrophe in photonic band gap materials doped with an ensemble of four-level nanoparticles. It is found that the dielectric constant of the system has a singularity when the resonance energy lies within the bands. This phenomenon is known as the dielectric catastrophe. It is also found that this phenomenon depends on the strength of the dipole-dipole interaction.

  10. Photoluminescence from a Tb-doped photonic crystal microcavity for white light generation

    International Nuclear Information System (INIS)

    Li Yigang; Almeida, Rui M

    2010-01-01

    Terbium-doped one-dimensional triple microcavities have been prepared by sol-gel processing. The photoluminescence (PL) of Tb 3+ ions outside a microcavity structure, when excited by blue laser light at 488 nm, consisted of three distinct peaks at 542, 587 and 619 nm. When embedded in the microcavities, the three Tb 3+ PL peaks were enhanced, balanced and broadened by the photonic crystal structure and combined into a continuous broad band. An analysis in the CIE colour space showed that white light can be obtained by mixing the modified Tb 3+ PL with the blue exciting light, while this is impossible with the original PL profile. This novel technique may improve white light generation by enhancing and modifying the spontaneous emission of current phosphors. It may also lead to the development of new rare-earth phosphor materials based on 4f-4f transitions, able to generate white light more efficiently, via simpler and cheaper alternatives to the current phosphor compositions. A novel configuration to combine this kind of structure with a white light-emitting-diode (LED) is also proposed.

  11. Non-doped-type white organic light-emitting diodes for lighting purpose

    Energy Technology Data Exchange (ETDEWEB)

    Zhu Jianzhuo [Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033 (China); Graduate School of Chinese Academy of Sciences, Beijing 100039 (China); Li Wenlian, E-mail: wllioel@yahoo.com.c [Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033 (China); Chu Bei, E-mail: beichu@163.co [Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033 (China); Yan Fei; Yang Dongfang; Liu Huihui; Wang Junbo [Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033 (China); Graduate School of Chinese Academy of Sciences, Beijing 100039 (China)

    2010-05-15

    We demonstrate a non-doped white organic light-emitting diode (WOLED) in which the blue-, green- and red-emissions are generated from 4,4'-bis(2,2'-diphenylvinyl)-1,1'-biphenyl, tris(8-hydroxyquinoline)aluminum (Alq) and 4-(dicyanomethylene)-2-t-butyl-6-(1,1,7,7-tetramethyl-julolidyl 9-enyl)-4H-pyran (DCJTB), which is used as an ultrathin layer. The DCJTB ultrathin layer plays the chromaticity tuning role in optimizing the white spectral band by modulating the location of the DCJTB ultrathin layer in the green emissive Alq layer. The optimized WOLED gives the Commission Internationale de l'Eclairage-1931 xy coordinates of (0.319, 0.335), a color rendering index of 91.2 at 10 V, a maximum brightness of 21010 cd/m{sup 2} at 12 V and a maximum current efficiency of 5.17 cd/A at 6.6 V. The electroluminescence mechanism of the white device is also discussed.

  12. Comparing Cr, and N only doping with (Cr,N)-codoping for enhancing visible light reactivity of TiO2

    International Nuclear Information System (INIS)

    Li, Yuan; Wang, Wei; Qiu, Xiaofeng; Meyer, Harry M. III; Paranthaman, Mariappan Parans; Eres, Gyula; Zhang, Zhenyu; Gu, Baohua

    2011-01-01

    The photoreactivity of titania (TiO2) nanoclusters with varying levels of N or Cr-doping, or (Cr,N)-codoping, was systematically investigated using photodegradation of methyl orange in aqueous suspensions. The shifting of the TiO2 absorption edge into the visible spectral region that is primarily attributable to band gap narrowing was found to be a reliable metric for estimating the photoreactivity of the doped nanoclusters. Compared to the weak response with undoped and N-doped TiO2, Cr-doping and (Cr, N)-codoping were found to significantly enhance photodegradation of methyl orange under visible light. The initial reaction rates increase from about 0 to above 1.6 10-2 min-1 when the doping concentration of Cr in TiO2 increases from 0 to 5%. In stark contrast, under UV irradiation, doping is not only ineffective but detrimental to the photoreactivity, and all doping including N or Cr only and (Cr, N)-codoping were found to reduce photoreactivity.

  13. Highly efficient green light harvesting from Mg doped ZnO nanoparticles: Structural and optical studies

    Energy Technology Data Exchange (ETDEWEB)

    Sharma, Sarla, E-mail: mail2sarlasharma@gmail.com [Department of Physics, University of Rajasthan, Jaipur 302055 (India); Vyas, Rishi [Department of Physics, Malaviya National Institute of Technology, Jaipur 302017 (India); Sharma, Neha [Department of Physics, University of Rajasthan, Jaipur 302055 (India); Singh, Vidyadhar [Okinawa Institute of Science and Technology, Graduate University, Okinawa 9040495 (Japan); Singh, Arvind [Department of Physics, Institute of Chemical Technology, Mumbai 400 019 (India); Kataria, Vanjula; Gupta, Bipin Kumar [National Physical Laboratory (CSIR), New Delhi 110012 (India); Vijay, Y.K. [Department of Physics, University of Rajasthan, Jaipur 302055 (India)

    2013-03-05

    Graphical abstract: Demonstration of highly efficient green light emission harvesting from Mg doped ZnO nanoparticles were synthesized via facile wet chemical route with an average particle size ∼15 nm. The resulted nanoparticles exhibit intense green emission peaking at 530 nm upon 325 nm excitation. The photoluminescence (PL) intensity of visible emission depends upon the doping concentration of Mg. The PL intensity was found maximum up to 4% doping of Mg and beyond it exhibits a decrees in emission. The obtained highly luminescent green emission of ZnO nanoparticle would be an ultimate choice for next generation optoelectronics device materials. Highlights: ► Zn{sub 1−x}Mg{sub x}O nanoparticles were prepared by mechanochemical processing. ► High blue emission intensity was observed contrary to previous reports. ► Blue emission is suggested to be originating from the high density of defects. ► Defect density in as-milled condition is very high resulting in high emission. ► Mg promoted non-radiative recombination and lowered intensities. -- Abstract: Highly efficient green light emission was observed from Mg doped ZnO nanoparticles synthesized via facile wet chemical route with an average particle size ∼15 nm. The XRD analysis confirmed the growth of wurtzite phase of ZnO nanoparticles. Moreover, the optical properties of these nanoparticles were investigated by different spectroscopic techniques. The resulted nanoparticles exhibit intense green emission peaking at 530 nm (2.34 eV) upon 325 nm (3.81 eV) excitation. The photoluminescence (PL) intensity of visible emission depends upon the doping concentration of Mg. The PL intensity was found maximum up to 4% doping of Mg, and beyond it exhibits a decrees in emission. Furthermore, by varying the band gap from 3.50 to 3.61 eV, the PL spectra showed a near band edge (NBE) emission at wavelength around 370 nm (3.35 eV) and a broad deep level emission in the visible region. The obtained highly

  14. The Electronic and Optical Properties of Au Doped Single-Layer Phosphorene

    Science.gov (United States)

    Zhu, Ziqing; Chen, Changpeng; Liu, Jiayi; Han, Lu

    2018-01-01

    The electronic properties and optical properties of single and double Au-doped phosphorene have been comparatively investigated using the first-principles plane-wave pseudopotential method based on density functional theory. The decrease from direct band gap 0.78 eV to indirect band gap 0.22 and 0.11 eV are observed in the single and double Au-doped phosphorene, respectively. The red shifts of absorbing edge occur in both doped systems, which consequently enhance the absorbing of infrared light in phosphorene. Band gap engineering can, therefore, be used to directly tune the optical absorption of phosphorene system by substitutional Au doping.

  15. Effects of B site doping on electronic structures of InNbO4 based on hybrid density functional calculations

    Science.gov (United States)

    Lu, M. F.; Zhou, C. P.; Li, Q. Q.; Zhang, C. L.; Shi, H. F.

    2018-01-01

    In order to improve the photocatalytic activity under visible-light irradiation, we adopted first principle calculations based on density functional theory (DFT) to calculate the electronic structures of B site transition metal element doped InNbO4. The results indicated that the complete hybridization of Nb 4d states and some Ti 3d states contributed to the new conduction band of Ti doped InNbO4, barely changing the position of band edge. For Cr doping, some localized Cr 3d states were introduced into the band gap. Nonetheless, the potential of localized levels was too positive to cause visible-light reaction. When it came to Cu doping, the band gap was almost same with that of InNbO4 as well as some localized Cu 3d states appeared above the top of VB. The introduction of localized energy levels benefited electrons to migrate from valence band (VB) to conduction band (CB) by absorbing lower energy photons, realizing visible-light response.

  16. Synthesis and Catalytic Applications of Non-Metal Doped Mesoporous Titania

    Directory of Open Access Journals (Sweden)

    Syed Z. Islam

    2017-03-01

    Full Text Available Mesoporous titania (mp-TiO2 has drawn tremendous attention for a diverse set of applications due to its high surface area, interfacial structure, and tunable combination of pore size, pore orientation, wall thickness, and pore connectivity. Its pore structure facilitates rapid diffusion of reactants and charge carriers to the photocatalytically active interface of TiO2. However, because the large band gap of TiO2 limits its ability to utilize visible light, non-metal doping has been extensively studied to tune the energy levels of TiO2. While first-principles calculations support the efficacy of this approach, it is challenging to efficiently introduce active non-metal dopants into the lattice of TiO2. This review surveys recent advances in the preparation of mp-TiO2 and their doping with non-metal atoms. Different doping strategies and dopant sources are discussed. Further, co-doping with combinations of non-metal dopants are discussed as strategies to reduce the band gap, improve photogenerated charge separation, and enhance visible light absorption. The improvements resulting from each doping strategy are discussed in light of potential changes in mesoporous architecture, dopant composition and chemical state, extent of band gap reduction, and improvement in photocatalytic activities. Finally, potential applications of non-metal-doped mp-TiO2 are explored in water splitting, CO2 reduction, and environmental remediation with visible light.

  17. The Simplest Way to Iodine-Doped Anatase for Photocatalysts Activated by Visible Light

    Directory of Open Access Journals (Sweden)

    Václav Štengl

    2011-01-01

    Full Text Available Iodine-doped TiO2 was prepared by thermal hydrolysis of aqueous solutions of the titanium peroxo-complex, which includes no organic solvents or organometallic compounds. The synthesized samples were characterized by X-ray diffraction (XRD, Raman spectroscopy (RS, infrared spectroscopy (IR, specific surface area (BET, and porosity determination (BJH. The morphology and particle size was determined by high-resolution transmission electron microscopy (HRTEM and selected area electron diffraction (SAED. All prepared samples have a red-shifted band-gap transition, well crystalline anatase structure, and porous particles with a 100–200 m2 g−1 specific surface area. The photocatalytic activity of iodine-doped titania samples was determined by decomposition of Orange II dye during irradiation at 365 nm and 400 nm. Iodine doping promotes the titania photocatalytic activity very efficiently under visible light irradiation. The titania sample with 0.32 wt.% I has the highest catalytic activity during the photocatalyzed degradation of Orange II dye in an aqueous suspension in the UV and visible regions.

  18. Doping and band gap control at poly(vinylidene fluoride)/graphene interface

    Science.gov (United States)

    Cai, Jia; Wang, Jian-Lu; Gao, Heng; Tian, Bobo; Gong, Shi-Jing; Duan, Chun-Gang; Chu, Jun-Hao

    2018-05-01

    Using the density-functional first-principles calculations, we investigate the electronic structures of poly(vinylidene fluoride) PVDF/graphene composite systems. The n- and p-doping of graphene can be flexibly switched by reversing the ferroelectric polarization of PVDF, without scarifying the intrinsic π-electron band dispersions of graphene that are usually undermined by chemical doping. The doping degree is also dependent on the thickness of PVDF layers, which will get saturated when PVDF is thick enough. In PVDF/bilayer graphene (BLG) heterostructure, the doping degree directly determines the local energy gap of the charged BLG. The sandwich structure of PVDF/BLG/PVDF can further enhance the local energy gap as well as keep the electric neutrality of BLG, which will be of great application potentials in graphene-based nanoelectronics.

  19. Structural characteristics and UV-light enhanced gas sensitivity of La-doped ZnO nanoparticles

    International Nuclear Information System (INIS)

    Ge Chunqiao; Xie Changsheng; Hu Mulin; Gui Yanghai; Bai Zikui; Zeng Dawen

    2007-01-01

    La-doped ZnO nanoparticles were synthesized by sol-gel method starting from zinc acetate dihydrate, lanthanum sesquioxide, alcohol and nitric acid. The crystal structure and morphology of the nanoparticles were characterized by XRD, FESEM, respectively. The thermal decomposition behavior of the the ZnO-based xerogel was detected by TG-DSC. The results show that as-prepared nanoparticles with the hexagonal wurtzite contain the adsorbed water and some organic compounds below 300 o C, which is the key to the calcinations of the ZnO-based xerogel. Pure ZnO and La-doped ZnO thick film sensors were prepared and tested for specific sensitivity to alcohol and benzene with (and without) UV-light excitation. Among all, 10 at.%La-ZnO-based sensors are significantly sensitive to 100 ppm alcohol and 100 ppm benzene. There is an obvious enhancement of the gas-sensing performances with UV-light excitation. That is, the sensitivity to 100 ppm benzene rises twice. The observed sensitivity to alcohol and benzene could be explained with the surface adsorption theory and the conduction-band theory

  20. First-principles studies of doped InTaO4 for photo catalytic applications

    International Nuclear Information System (INIS)

    Hyunju, Chang; Kijeong, Kong; Yong, Soo Choi; Youngmin, Choi; Jin-Ook, Baeg; Sang-Jin, Moon

    2006-01-01

    We have calculated electronic structure of InTaO 4 using first-principle method, in order to investigate the relationship between its electronic structures and visible light absorption. We have calculated densities of states (DOS) for various states of InTaO 4 , such as pristine, oxygen vacancy, Ni-doped, and A-doped (A = C, N, and S) states. We have found that oxygen vacancy can induce the gap states and Ni-doping can narrow the band gap by generating additional states on the top of the valence band as well as on the top of the gap states. For A-doped states, it was found that N-doping and S-doping could narrow the pristine band gap inducing the additional states above the pristine valence band, while C-doping can generate the gap states in the middle of the pristine band gap. (authors)

  1. Fabrication of Ni-doped BiVO_4 semiconductors with enhanced visible-light photocatalytic performances for wastewater treatment

    International Nuclear Information System (INIS)

    Regmi, Chhabilal; Kshetri, Yuwaraj K.; Kim, Tae-Ho; Pandey, Ramesh Prasad; Ray, Schindra Kumar; Lee, Soo Wohn

    2017-01-01

    Highlights: • Synthesis of a Ni-doped BiVO_4 semiconductor photocatalyst with reduced band gap energy. • Ni-doped BiVO_4 provided efficient photocatalytic activity for ibuprofen degradation and E. coli and green tide deactivation. • DFT calculation and thermodynamic modeling to understand the underlying mechanism. - Abstract: A visible-light-driven Ni-doped BiVO_4 photocatalyst was synthesized using a microwave hydrothermal method. The nominal Ni doping amount of 1 wt% provided excellent photoactivity for a variety of water pollutants, such as ibuprofen (pharmaceutical), Escherichia coli (bacteria), and green tides (phytoplankton). Each Ni-doped BiVO_4 sample exhibits better performance than pure BiVO_4. The degradation of ibuprofen reaches 80% within 90 min, the deactivation of Escherichia coli reaches around 92% within 5 h, and the inactivation of green tide (Chlamydomonas pulsatilla) reaches 70% upon 60 min of the visible light irradiation. The first principle calculation and thermodynamic modeling revealed that Ni doping in the vanadium site gives the most stable configuration of the synthesized samples with the formation of an in-gap energy state and oxygen vacancies. The in-gap energy state and the oxygen vacancies serve as an electron-trapping center that decreases the migration time of the photogenerated carrier and increases the separation efficiency of electron-hole pairs, which are responsible for the observed efficient photocatalytic, anti-bacterial and anti-algal activity of the samples. These properties thus suggest potential applications of Ni-doped BiVO_4 as a multifunctional material in the field of wastewater treatment.

  2. Electronic structures of N- and C-doped NiO from first-principles calculations

    International Nuclear Information System (INIS)

    Long, Run; English, Niall J.; Mooney, Damian A.

    2010-01-01

    The large intrinsic band gap of NiO has hindered severely its potential application under visible-light irradiation. In this Letter, we have performed first-principles calculations on the electronic properties of N- and C-doped NiO to ascertain if its band gap may be narrowed theoretically. It was found that impurity bands driven by N 2p or C 2p states appear in the band gap of NiO and that some of these locate at the conduction band minimum, which leads to a significant band gap narrowing. Our results show that N-doped NiO may serve as a potential photocatalyst relative to C-doped NiO, due to the presence of some recombination centres in C-doped NiO.

  3. Fe-N co-doped SiO2@TiO2 yolk-shell hollow nanospheres with enhanced visible light photocatalytic degradation

    Science.gov (United States)

    Wan, Hengcheng; Yao, Weitang; Zhu, Wenkun; Tang, Yi; Ge, Huilin; Shi, Xiaozhong; Duan, Tao

    2018-06-01

    SiO2@TiO2 yolk@shell hollow nanospheres (STNSs) is considered as an outstanding photocatalyst due to its tunable structure and composition. Based on this point, we present an unprecedentedly excellent photocatalytic property of STNSs toward tannic acid via a Fe-N co-doped strategy. Their morphologies, compositions, structure and properties are characterized. The Fe-N co-doped STNSs formed good hollow yolk@shell structure. The results show that the energy gap of the composites can be downgraded to 2.82 eV (pure TiO2 = 3.2 eV). Photocatalytic degradation of tannic acid (TA, 30 mg L-1) under visible light (380 nm TiO2 nanospheres, non-doped STNSs and N-doped STNSs, the Fe-N co-doped STNSs exhibits the highest activity, which can degrade 99.5% TA into CO2 and H2O in 80 min. The probable degradation mechanism of the composites is simultaneously proposed, the band gap of STNSs becomes narrow by co-doping Fe-N, so that the TiO2 shell can stimulate electrons under visible light exposure, generate the ions of radOH and radO2- with a strong oxidizing property. Therefore this approach works is much desired for radioactive organic wastewater photocatalytic degradation.

  4. Photonic band edge assisted spontaneous emission enhancement from all Er3+ 1-D photonic band gap structure

    Science.gov (United States)

    Chiasera, A.; Meroni, C.; Varas, S.; Valligatla, S.; Scotognella, F.; Boucher, Y. G.; Lukowiak, A.; Zur, L.; Righini, G. C.; Ferrari, M.

    2018-06-01

    All Er3+ doped dielectric 1-D Photonic Band Gap Structure was fabricated by rf-sputtering technique. The structure was constituted by of twenty pairs of SiO2/TiO2 alternated layers doped with Er3+ ions. The scanning electron microscopy was used to check the morphology of the structure. Transmission measurements put in evidence the stop band in the range 1500 nm-1950 nm. The photoluminescence measurements were obtained by optically exciting the sample and detecting the emitted light in the 1.5 μm region at different detection angles. Luminescence spectra and luminescence decay curves put in evidence that the presence of the stop band modify the emission features of the Er3+ ions.

  5. Photodegradation of aniline by goethite doped with boron under ultraviolet and visible light irradiation

    International Nuclear Information System (INIS)

    Liu, Guanglong; Liao, Shuijiao; Zhu, Duanwei; Liu, Linghua; Cheng, Dongsheng; Zhou, Huaidong

    2011-01-01

    Highlights: → Goethite modified by boron was prepared by sol-gel method in presence of boron acid at the low temperature. → B-goethite has slight red shift in the band gap transition beside their stronger light absorption compared with pristine goethite. → The results showed that semiconductor photocatalytic reaction mechanism should exist in the process of aniline degradation with goethite and B-goethite as photocatalyst. -- Abstract: In the present study, goethite and goethite doped with boron (B-goethite) were employed to detect the presence or absence of semiconductor photocatalytic reaction mechanism in the reaction systems. B-goethite was prepared by sol-gel method in presence of boron acid in order to improve its photocatalystic efficiency under the ultraviolet and visible light irradiation. The optical properties of goethite and B-goethite were characterized by ultraviolet and visible absorption spectra and the result indicated that B-goethite has slight red shift in the band gap transition beside their stronger light absorption compared with pristine goethite. Degradation of aniline was investigated in presence of goethite and B-goethite in aqueous solution. It was found that the B-goethite photocatalyst exhibited enhanced ultraviolet and visible light photocatalytic activity in degradation of aniline compared with the pristine goethite. The photocatalytic degradation mechanism of B-goethite was discussed.

  6. Thermal evolution of exchange interactions in lightly doped barium hexaferrites

    Energy Technology Data Exchange (ETDEWEB)

    Trukhanov, S.V., E-mail: truhanov@ifttp.bas-net.by [National University of Science and Technology MISiS, Leninsky Prospekt, 4, 119049 Moscow (Russian Federation); SSPA “Scientific and practical materials research centre of NAS of Belarus”, P. Brovki Str., 19, 220072 Minsk, Belorussia (Belarus); Trukhanov, A.V. [National University of Science and Technology MISiS, Leninsky Prospekt, 4, 119049 Moscow (Russian Federation); SSPA “Scientific and practical materials research centre of NAS of Belarus”, P. Brovki Str., 19, 220072 Minsk, Belorussia (Belarus); Kostishyn, V.G.; Panina, L.V. [National University of Science and Technology MISiS, Leninsky Prospekt, 4, 119049 Moscow (Russian Federation); Turchenko, V.A. [Joint Institute for Nuclear Research, Joliot-Curie Str., 141980 Dubna (Russian Federation); Donetsk Institute of Physics and Technology named after A.A. Galkin of the NAS of Ukraine, 72 R.Luxemburg Str., 83114 Donetsk (Ukraine); Kazakevich, I.S. [SSPA “Scientific and practical materials research centre of NAS of Belarus”, P. Brovki Str., 19, 220072 Minsk, Belorussia (Belarus); Trukhanov, An.V. [National University of Science and Technology MISiS, Leninsky Prospekt, 4, 119049 Moscow (Russian Federation); SSPA “Scientific and practical materials research centre of NAS of Belarus”, P. Brovki Str., 19, 220072 Minsk, Belorussia (Belarus); Trukhanova, E.L.; Natarov, V.O. [SSPA “Scientific and practical materials research centre of NAS of Belarus”, P. Brovki Str., 19, 220072 Minsk, Belorussia (Belarus); Balagurov, A.M. [Joint Institute for Nuclear Research, Joliot-Curie Str., 141980 Dubna (Russian Federation)

    2017-03-15

    The lightly doped BaFe{sub 12−x}D{sub x}O{sub 19} (D=Al{sup 3+}, In{sup 3+}; x=0.1 and 0.3) polycrystalline hexaferrite samples have been investigated by powder neutron diffractometry as well as by vibration sample magnetometry in a wide temperature range from 4 K up to 740 K and in magnetic field up to 14 T to establish the nature of Fe{sup 3+}(Al{sup 3+}, In{sup 3+}) – O{sup 2-} - Fe{sup 3+}(Al{sup 3+}, In{sup 3+}) indirect exchange interactions. The crystal structure features such as the ionic coordinates and lattice parameters have been defined and Rietveld refined. The Invar effect has been observed in low temperature range below 150 K. It was explained by the thermal oscillation anharmonicity of ions. It is established that the ferrimagnet-paramagnet phase transition is a standard second-order one. From the macroscopic magnetization measurement the Curie temperature and ordered magnetic moment per nominal iron ion are obtained. From the microscopic diffraction measurement the magnetic moments at all the nonequivalent ionic positions and total magnetic moment per iron ion have been obtained at different temperatures down to 4 K. The light diamagnetic doping mechanism and magnetic structure model are proposed. The effect of light diamagnetic doping on nature of Fe{sup 3+}(Al{sup 3+}, In{sup 3+}) – O{sup 2-} - Fe{sup 3+}(Al{sup 3+}, In{sup 3+}) indirect exchange interactions with temperature increase is discussed. - Highlights: • Crystal structure for lightly doped barium hexaferrites was investigated. • Atomic coordinates and lattice parameters were Rietveld refined. • Magnetic properties for lightly doped barium hexaferrites was investigated. • Magnetic structure for lightly doped barium hexaferrites was investigated. • Magnetic moments at different position and total moment per iron ion were defined.

  7. Characteristics of N-doped TiO{sub 2} nanotube arrays by N{sub 2}-plasma for visible light-driven photocatalysis

    Energy Technology Data Exchange (ETDEWEB)

    Liu Xu [College of Chemical Engineering, Sichuan University, Chengdu 610065 (China); Liu Zhongqing, E-mail: 301zql@vip.sina.com [College of Chemical Engineering, Sichuan University, Chengdu 610065 (China); Zheng Jian; Yan Xin; Li Dandan; Chen Si [College of Chemical Engineering, Sichuan University, Chengdu 610065 (China); Chu Wei, E-mail: chuwei1965_scu@yahoo.com [College of Chemical Engineering, Sichuan University, Chengdu 610065 (China)

    2011-10-13

    Highlights: > A new pathway is provided to prepare N-doped TiO2 nanotube arrays using N{sub 2}-plasma treatment. > N{sub 2}-plasma treatment did not wreck the structure of nanotube arrays. > Nitrogen doping promoted the phase transition to rutile phase at low annealing temperatures > Nitrogen doping narrow band gap of TiO{sub 2} and improve the photocatalytic activity of samples. - Abstract: N-doped TiO{sub 2} nanotube arrays were prepared by electrochemical anode oxidation of Ti foil followed by treatment with N{sub 2}-plasma and subsequent annealed under Ar atmosphere. The morphologies, composition and optical properties of N-doped TiO{sub 2} nanotube arrays were characterized using field-emission scanning electron microscope (FE-SEM), transmission electron microscope (TEM), X-ray photoelectron spectroscopy (XPS), X-ray diffraction spectrometer (XRD), Photoluminescence (PL) and UV-vis diffusion reflection spectroscopy (UV-vis DRS). Methylene blue (MB) solution was utilized as the degradation model to evaluate the photocatalytic activity of the samples under visible light irradiation. The results suggested N{sub 2}-plasma treatment created doping of nitrogen onto the surface of photoelectrodes successfully and the N-doped TiO{sub 2} nanotube arrays display a significantly enhancement of the photocatalytic activity comparing with the pure TiO{sub 2} nanotube arrays under the visible light irradiation.

  8. First-principles studies of doped InTaO{sub 4} for photo catalytic applications

    Energy Technology Data Exchange (ETDEWEB)

    Hyunju, Chang; Kijeong, Kong; Yong, Soo Choi; Youngmin, Choi; Jin-Ook, Baeg; Sang-Jin, Moon [Korea Research Institute of Chemical Technology, Daejeon, (Korea, Republic of)

    2006-05-15

    We have calculated electronic structure of InTaO{sub 4} using first-principle method, in order to investigate the relationship between its electronic structures and visible light absorption. We have calculated densities of states (DOS) for various states of InTaO{sub 4}, such as pristine, oxygen vacancy, Ni-doped, and A-doped (A = C, N, and S) states. We have found that oxygen vacancy can induce the gap states and Ni-doping can narrow the band gap by generating additional states on the top of the valence band as well as on the top of the gap states. For A-doped states, it was found that N-doping and S-doping could narrow the pristine band gap inducing the additional states above the pristine valence band, while C-doping can generate the gap states in the middle of the pristine band gap. (authors)

  9. Enhancing visible light photocatalytic and photocharge separation of (BiO){sub 2}CO{sub 3} plate via dramatic I{sup −} ions doping effect

    Energy Technology Data Exchange (ETDEWEB)

    Liang, Lei [College of Chemistry and Materials Science, Huaibei Normal University, Huaibei, 235000, Anhui (China); Cao, Jing [College of Chemistry and Materials Science, Huaibei Normal University, Huaibei, 235000, Anhui (China); Anhui Collaborative Innovation Center of Advanced Functional Composite, Huaibei, 235000, Anhui (China); Lin, Haili, E-mail: linhaili@mail.ipc.ac.cn [College of Chemistry and Materials Science, Huaibei Normal University, Huaibei, 235000, Anhui (China); Guo, Xiaomin; Zhang, Meiyu [College of Chemistry and Materials Science, Huaibei Normal University, Huaibei, 235000, Anhui (China); Chen, Shifu, E-mail: chshifu@chnu.edu.cn [College of Chemistry and Materials Science, Huaibei Normal University, Huaibei, 235000, Anhui (China); College of Chemistry and Materials Engineering, Anhui Science and Technology University, Fengyang, 233100, Anhui (China)

    2016-08-15

    Highlights: • Novel I-(BiO){sub 2}CO{sub 3} was prepared by a facile chemical precipitation method. • I{sup −} ions impurity level located on the top of valence band of (BiO){sub 2}CO{sub 3}. • I{sup −} ions doping largely improved photocatalytic activity of I-(BiO){sub 2}CO{sub 3}. • I-(BiO){sub 2}CO{sub 3} displayed excellent photocharge separation efficiency. - Abstract: Novel I{sup −} ions doped (BiO){sub 2}CO{sub 3} (I-(BiO){sub 2}CO{sub 3}) photocatalysts were successfully synthesized via a facile chemical precipitation method. Under visible light (λ > 400 nm), I-(BiO){sub 2}CO{sub 3} displayed much higher activity for rhodamine B and dichlorophenol degradation than the undoped (BiO){sub 2}CO{sub 3}. The pseudo-first-order rate constant k{sub app} of RhB degradation over 15.0% I-(BiO){sub 2}CO{sub 3} was 0.54 h{sup −1}, which is 11.3 times higher than that of (BiO){sub 2}CO{sub 3}. The doped I{sup −} ions formed an impurity level on the top of valence band of (BiO){sub 2}CO{sub 3} and induced much more visible light to be absorbed. The enhanced photocurrent and surface photovoltage properties were detected, which strongly ensures the efficient separation of electrons and holes in I-(BiO){sub 2}CO{sub 3} system under visible light. It provides a facile way to improve the photocatalytic activity of the wide-band-gap (BiO){sub 2}CO{sub 3} via intense doping effect of I{sup −} ions.

  10. Phosphors doped with Dy3+ and Gd3+ for lighting

    International Nuclear Information System (INIS)

    Su, Q; Pei, Z.; Zeng, Q.; Chi, L.

    1998-01-01

    Full text: Some heavy lanthanide ions with even atomic number such as Dy 3+ and Gd 3+ are abundant in the ion adsorption type deposit of China. Their price is cheap and they have specific spectroscopic properties which can be used as phosphors. Dy 3i on has two dominant bands in the emission spectrum. The yellow band (575 nm) corresponds to the hypersensitive transition 4 F 9/2 → 6 H 13/2 (ΔL=2, ΔJ=2), and the blue band (485 nm) corresponds to the 4 F 9/2 → 6 H 15/2 transition. Factors which influence on the yellow- to-blue intensity ratio (Y/B) were investigated. Adjusting to a suitable Y/B, Dy 3+ will emit white light with high colour temperature and can be used for lighting. But Dy 3+ ion has only narrow excitation bands of f-f transitions ranging from 300-500 nm, no broad excitation band such as charge transfer band or f-d transition band exists in the UV region 200-300 nm. Hence its luminescent efficiency is low when it is excited by UV radiation emitted from the mercury plasma. This is one of the drawbacks to its use as lamp phosphor. However, this can be overcome by sensitisation with Gd 3+ , Pb 2+ or other sensitisers such as vanadate shown in this report. Gd 3+ is not only a good matrix, but also a good sensitiser. Using its 8 S 7/2 → 6 D, 6 I and 6 P transitions, the UV excitation energy can be absorbed and transferred to the activator such as Dy 3+ . Therefore, in some cases Gd 3+ is better than Y 3+ which is optical inert as a matrix. For the phosphor Ca 1.96 Pb 0.04 RE 7.9 Dy 0.1 (SiO 4 ) 6 O 2 prepared by sol-gel method, the intensity of Dy 3+ in the Gd 3+ compound (RE=Gd 3+ ) is six times that in the Y 3+ compound. Some new phosphors doped with Dy 3+ and Gd 3+ prepared in our laboratory are reported

  11. Emission Channeling Studies on the Behaviour of Light Alkali Atoms in Wide-Band-Gap Semiconductors

    CERN Multimedia

    Recknagel, E; Quintel, H

    2002-01-01

    % IS342 \\\\ \\\\ A major problem in the development of electronic devices based on diamond and wide-band-gap II-VI compound semiconductors, like ZnSe, is the extreme difficulty of either n- or p-type doping. The only reports of successful n-type doping of diamond involves ion implanted Li, which was found to be an intersititial donor. Recent theoretical calculations suggest that Na, P and N dopant atoms are also good candidates for n-type doping of diamond. No experimental evidence has been obtained up to now, mainly because of the complex and partly unresolved defect situation created during ion implantation, which is necessary to incorporate potential donor atoms into diamond. \\\\ \\\\In the case of ZnSe, considerable effort has been invested in trying to fabricate pn-junctions in order to make efficient, blue-light emitting diodes. However, it has proved to be very difficult to obtain p-type ZnSe, mainly because of electrical compensation related to background donor impurities. Li and Na are believed to be ampho...

  12. Luminescence- and nanoparticle-mediated increase of light absorption by photoreceptor cells: Converting UV light to visible light.

    Science.gov (United States)

    Li, Lei; Sahi, Sunil K; Peng, Mingying; Lee, Eric B; Ma, Lun; Wojtowicz, Jennifer L; Malin, John H; Chen, Wei

    2016-02-10

    We developed new optic devices - singly-doped luminescence glasses and nanoparticle-coated lenses that convert UV light to visible light - for improvement of visual system functions. Tb(3+) or Eu(3+) singly-doped borate glasses or CdS-quantum dot (CdS-QD) coated lenses efficiently convert UV light to 542 nm or 613 nm wavelength narrow-band green or red light, or wide-spectrum white light, and thereby provide extra visible light to the eye. In zebrafish (wild-type larvae and adult control animals, retinal degeneration mutants, and light-induced photoreceptor cell degeneration models), the use of Tb(3+) or Eu(3+) doped luminescence glass or CdS-QD coated glass lenses provide additional visible light to the rod and cone photoreceptor cells, and thereby improve the visual system functions. The data provide proof-of-concept for the future development of optic devices for improvement of visual system functions in patients who suffer from photoreceptor cell degeneration or related retinal diseases.

  13. Three-dimensional ruthenium-doped TiO 2 sea urchins for enhanced visible-light-responsive H 2 production

    Energy Technology Data Exchange (ETDEWEB)

    Nguyen-Phan, Thuy-Duong; Luo, Si; Vovchok, Dimitriy; Llorca, Jordi; Sallis, Shawn; Kattel, Shyam; Xu, Wenqian; Piper, Louis F. J.; Polyansky, Dmitry E.; Senanayake, Sanjaya D.; Stacchiola, Dario J.; Rodriguez, José A.

    2016-01-01

    Three-dimensional (3D) monodispersed sea urchin-like Ru-doped rutile TiO2 hierarchical architectures composed of radially aligned, densely-packed TiO2 nanorods have been successfully synthesized via an acid-hydrothermal method at low temperature without the assistance of any structure-directing agent and post annealing treatment. The addition of a minuscule concentration of ruthenium dopants remarkably catalyze the formation of the 3D urchin structure and drive the enhanced photocatalytic H2 production under visible light irradiation, not possible on undoped and bulk rutile TiO2. Increasing ruthenium doping dosage not only increases the surface area up to 166 m2 g-1 but also induces enhanced photo response in the regime of visible and near infrared light. The doping introduces defect impurity levels, i.e. oxygen vacancy and under-coordinated Ti3+, significantly below the conduction band of TiO2, and ruthenium species act as electron donors/acceptors that accelerate the photogenetated hole and electron transfer and efficiently suppress the rapid charge recombination, therefore improving the visible-light-driven activity.

  14. Fabrication of Ni-doped BiVO{sub 4} semiconductors with enhanced visible-light photocatalytic performances for wastewater treatment

    Energy Technology Data Exchange (ETDEWEB)

    Regmi, Chhabilal [Department of Environmental and Biochemical Engineering, Sun Moon University, Chungnam 31460 (Korea, Republic of); Kshetri, Yuwaraj K. [Department of Advanced Materials Engineering, Sun Moon University, Chungnam 31460 (Korea, Republic of); Kim, Tae-Ho [Division of Mechanics and ICT Convergence Engineering, Sun Moon University, Chungnam 31460 (Korea, Republic of); Pandey, Ramesh Prasad [Institute of Biomolecule Reconstruction, Department of BT-Convergent Pharmaceutical Engineering, Sun Moon University, Chungnam 31460 (Korea, Republic of); Ray, Schindra Kumar [Department of Environmental and Biochemical Engineering, Sun Moon University, Chungnam 31460 (Korea, Republic of); Lee, Soo Wohn, E-mail: swlee@sunmoon.ac.kr [Department of Environmental and Biochemical Engineering, Sun Moon University, Chungnam 31460 (Korea, Republic of)

    2017-08-15

    Highlights: • Synthesis of a Ni-doped BiVO{sub 4} semiconductor photocatalyst with reduced band gap energy. • Ni-doped BiVO{sub 4} provided efficient photocatalytic activity for ibuprofen degradation and E. coli and green tide deactivation. • DFT calculation and thermodynamic modeling to understand the underlying mechanism. - Abstract: A visible-light-driven Ni-doped BiVO{sub 4} photocatalyst was synthesized using a microwave hydrothermal method. The nominal Ni doping amount of 1 wt% provided excellent photoactivity for a variety of water pollutants, such as ibuprofen (pharmaceutical), Escherichia coli (bacteria), and green tides (phytoplankton). Each Ni-doped BiVO{sub 4} sample exhibits better performance than pure BiVO{sub 4}. The degradation of ibuprofen reaches 80% within 90 min, the deactivation of Escherichia coli reaches around 92% within 5 h, and the inactivation of green tide (Chlamydomonas pulsatilla) reaches 70% upon 60 min of the visible light irradiation. The first principle calculation and thermodynamic modeling revealed that Ni doping in the vanadium site gives the most stable configuration of the synthesized samples with the formation of an in-gap energy state and oxygen vacancies. The in-gap energy state and the oxygen vacancies serve as an electron-trapping center that decreases the migration time of the photogenerated carrier and increases the separation efficiency of electron-hole pairs, which are responsible for the observed efficient photocatalytic, anti-bacterial and anti-algal activity of the samples. These properties thus suggest potential applications of Ni-doped BiVO{sub 4} as a multifunctional material in the field of wastewater treatment.

  15. A simplified approach to the band gap correction of defect formation energies: Al, Ga, and In-doped ZnO

    Science.gov (United States)

    Saniz, R.; Xu, Y.; Matsubara, M.; Amini, M. N.; Dixit, H.; Lamoen, D.; Partoens, B.

    2013-01-01

    The calculation of defect levels in semiconductors within a density functional theory approach suffers greatly from the band gap problem. We propose a band gap correction scheme that is based on the separation of energy differences in electron addition and relaxation energies. We show that it can predict defect levels with a reasonable accuracy, particularly in the case of defects with conduction band character, and yet is simple and computationally economical. We apply this method to ZnO doped with group III elements (Al, Ga, In). As expected from experiment, the results indicate that Zn substitutional doping is preferred over interstitial doping in Al, Ga, and In-doped ZnO, under both zinc-rich and oxygen-rich conditions. Further, all three dopants act as shallow donors, with the +1 charge state having the most advantageous formation energy. Also, doping effects on the electronic structure of ZnO are sufficiently mild so as to affect little the fundamental band gap and lowest conduction bands dispersion, which secures their n-type transparent conducting behavior. A comparison with the extrapolation method based on LDA+U calculations and with the Heyd-Scuseria-Ernzerhof hybrid functional (HSE) shows the reliability of the proposed scheme in predicting the thermodynamic transition levels in shallow donor systems.

  16. Visible light-responded C, N and S co-doped anatase TiO{sub 2} for photocatalytic reduction of Cr(VI)

    Energy Technology Data Exchange (ETDEWEB)

    Lei, X.F., E-mail: leixuefei69@163.com [School of Resources and Materials, Northeastern University at Qinhuangdao, Qinhuangdao 066004 (China); Institute of Metallurgical Resource and Environmental Engineering, Northeastern University, Shenyang 110819 (China); Liaoning Key Laboratory of Metallurgical Resource Recycling Science, Shenyang 110819 (China); Liaoning Engineering and Technology Research Center of Boron Resource, Comprehensive, Utilization, Shenyang 110819 (China); Liaoning Provincial Universities Key Laboratory of Boron Resource Ecological, Utilization, Technology and Boron Materials, Shenyang 110819 (China); Xue, X.X.; Yang, H. [Institute of Metallurgical Resource and Environmental Engineering, Northeastern University, Shenyang 110819 (China); Liaoning Key Laboratory of Metallurgical Resource Recycling Science, Shenyang 110819 (China); Liaoning Engineering and Technology Research Center of Boron Resource, Comprehensive, Utilization, Shenyang 110819 (China); Liaoning Provincial Universities Key Laboratory of Boron Resource Ecological, Utilization, Technology and Boron Materials, Shenyang 110819 (China); Chen, C.; Li, X.; Pei, J.X.; Niu, M.C.; Yang, Y.T.; Gao, X.Y. [School of Resources and Materials, Northeastern University at Qinhuangdao, Qinhuangdao 066004 (China)

    2015-10-15

    The (C, N and S) co-doped TiO{sub 2} (TH-TiO{sub 2}) samples were synthesized by a sol-gel method calcined at 500 °C, employing butyl titanate as the titanium source and thiourea as the dopant. The structures of TH-TiO{sub 2} samples were characterized by X-ray diffraction (XRD), Transmission electron microscope (TEM), X-ray photoelectron spectroscopy (XPS), UV–vis diffuse reflectance spectra (DRS), photoluminescence (PL) spectroscopy, Thermo gravimetry and differential thermal analysis (TG-DTA), Scanning electron microscopy (SEM) and nitrogen adsorption–desorption isotherms. The photocatalytic activities were checked through the photocatalytic reduction of Cr(VI) as a model compound under visible light irradiation. The results showed that the thiourea content played an important role on the microstructure and photocatalytic activity of the samples. According to XPS results, (C, N and S) atoms were successfully co-doped into the nanostructures of TH-TiO{sub 2} samples. TH-TiO{sub 2} samples with thiourea: Ti molar ratio of 1.5 exhibits higher photocatalytic activity than that of the other samples under visible light irradiation, which can be attributed to the synergic effect of the pure anatase structure, the higher light absorption characteristics in visible regions, separation efficiency of electron–hole pairs, the specific surface area and the optimum (C, N and S) content. - Graphical abstract: (C, N and S) co-doped TiO{sub 2} samples show good photocatalytic activity for Cr (VI) reduction under visible light irradiation. - Highlights: • (C, N and S) co-doping in TH-TiO{sub 2} samples can promote the formation of the pure anatase structure. • (C, N and S) atoms were successfully co-doped into the nanostructures of TH-TiO{sub 2} samples. • The band gap energy of TH-TiO{sub 2} samples reduced after (C, N and S) co-doping. • (C, N and S) co-doped TiO{sub 2} samples were effective for the photocatalytic reduction of Cr(VI) under visible light

  17. Photocatalytic activity of Fe-doped CaTiO₃ under UV-visible light.

    Science.gov (United States)

    Yang, He; Han, Chong; Xue, Xiangxin

    2014-07-01

    The photocatalytic degradation of methylene blue (MB) over Fe-doped CaTiO₃ under UV-visible light was investigated. The as-prepared samples were characterized using X-ray diffraction (XRD), scanning electron microscope (SEM) equipped with an energy dispersive spectrometer (EDS) system, Fourier transform infrared spectra (FT-IR), and UV-visible diffuse reflectance spectroscopy (DRS). The results show that the doping with Fe significantly promoted the light absorption ability of CaTiO₃ in the visible light region. The Fe-doped CaTiO₃ exhibited higher photocatalytic activity than CaTiO₃ for the degradation of MB. However, the photocatalytic activity of the Fe-doped CaTiO₃ was greatly influenced by the calcination temperature during the preparation process. The Fe-doped CaTiO₃ prepared at 500°C exhibited the best photocatalytic activity, with degradation of almost 100% MB (10ppm) under UV-visible light for 180 min. Copyright © 2014. Published by Elsevier B.V.

  18. Radiative recombination in doped indium phosphide crystals

    International Nuclear Information System (INIS)

    Negreskul, V.V.; Russu, E.V.; Radautsan, S.I.; Cheban, A.G.; AN Moldavskoj SSR, Kishinev. Inst. Prikladnoj Fiziki)

    1975-01-01

    Photoluminiscence spectra of nondoped n-InP and their change upon doping with silicon, cadmium, zinc and copper impurities were studied. The shortest wave band at 1.41 eV is connected with radiative electron transition from a shallow donor level (probably silicon) to valent zone, while the band with maximum at 1.37 - 1.39 eV is due to radiative electron transition to an acceptor level whose energy depends upon the nature and concentration of impurity implanted. The luminescence of Light-doped p-InP crystals enables to estimate the ionization energies of acceptor levels in cadmium (Esub(a)=0.043 eV) and zinc (Esub(a)=0.027 eV). Energies of acceptor levels (0.22 and 0.40 eV) due to copper impurity are determined. Intensity of edge emission in the specimens light-doped with silicon is higher than in the nondoped n-InP crystals

  19. White- and blue-light-emitting dysprosium(III) and terbium(III)-doped gadolinium titanate phosphors.

    Science.gov (United States)

    Antić, Ž; Kuzman, S; Đorđević, V; Dramićanin, M D; Thundat, T

    2017-06-01

    Here we report the synthesis and structural, morphological, and photoluminescence analysis of white- and blue-light-emitting Dy 3 + - and Tm 3 + -doped Gd 2 Ti 2 O 7 nanophosphors. Single-phase cubic Gd 2 Ti 2 O 7 nanopowders consist of compact, dense aggregates of nanoparticles with an average size of ~25 nm for Dy 3 + -doped and ~50 nm for Tm 3 + -doped samples. The photoluminescence results indicated that ultraviolet (UV) light excitation of the Dy 3 + -doped sample resulted in direct generation of white light, while a dominant yellow emission was obtained under blue-light excitation. Intense blue light was obtained for Tm 3 + -doped Gd 2 Ti 2 O 7 under UV excitation suggesting that this material could be used as a blue phosphor. Copyright © 2016 John Wiley & Sons, Ltd.

  20. Enhanced photocatalytic degradation of dye under visible light on mesoporous microspheres by defects in manganese- and nitrogen-co-doped TiO{sub 2}

    Energy Technology Data Exchange (ETDEWEB)

    Feng, Lu; Jiang, Heng, E-mail: hjiang78@hotmail.com [Liaoning Shihua University, School of Chemistry and Materials Science (China); Zou, Mingming; Xiong, Fengqiang; Ganeshraja, Ayyakannu Sundaram; Pervaiz, Erum [Chinese Academy of Sciences, Dalian National Laboratory for Clean Energy, Dalian Institute of Chemical Physics (China); Liu, Yinan; Zou, Shunying [Dalian Environmental Protection Laboratory (China); Yang, Minghui, E-mail: myang@dicp.ac.cn [Chinese Academy of Sciences, Dalian National Laboratory for Clean Energy, Dalian Institute of Chemical Physics (China)

    2016-09-15

    Manganese- and nitrogen-co-doped mesoporous TiO{sub 2} microsphere photocatalysts are prepared by a simple sol–gel method with controllable sizes in the range of 400–500 nm and high surface area of 112 m{sup 2} g{sup −1}. Manganous acetate is the Mn source, and ammonia gas is the nitrogen source used. The dopants are found to be uniformly distributed in the TiO{sub 2} matrix. Interestingly, in (Mn,N)-co-doped TiO{sub 2}, we observe an effective indirect band gap of ~2.58 eV. (Mn,N)-co-doped mesoporous TiO{sub 2} microspheres show higher photocatalytic activity than Mn–TiO{sub 2} microspheres under visible light irradiation. Among the samples reported in this work, 0.2 at.% Mn doping and 500 °C 2-h nitriding condition give the highest photocatalytic activity. The observed photocatalytic activity in the (Mn,N)-co-doped TiO{sub 2} is attributed to the contribution from improved absorption due to trap levels of Mn, oxygen vacancies and N doping.Graphical AbstractManganese- and nitrogen-co-doped mesoporous TiO{sub 2} microspheres containing substitutional N, interstitial N and O vacancies show high visible light photocatalytic activity.

  1. Rose-like I-doped Bi_2O_2CO_3 microspheres with enhanced visible light response: DFT calculation, synthesis and photocatalytic performance

    International Nuclear Information System (INIS)

    Zai, Jiantao; Cao, Fenglei; Liang, Na; Yu, Ke; Tian, Yuan; Sun, Huai; Qian, Xuefeng

    2017-01-01

    Highlights: • DFT reveals I"− can partially substitute CO_3"2"−to narrow the bandgap of Bi_2O_2CO_3. • Sodium citrate play a key role on the formation of rose-like I-doped Bi_2O_2CO_3. • Rose-like I-doped Bi_2O_2CO_3 show enhanced visible light response. • The catalyst has enhanced photocatalytic activity to organic and Cr(VI) pollutes. - Abstract: Based on the crystal structure and the DFT calculation of Bi_2O_2CO_3, I"− can partly replace the CO_3"2"−in Bi_2O_2CO_3 to narrow its bandgap and to enhance its visible light absorption. With this in mind, rose-like I-doped Bi_2O_2CO_3 microspheres were prepared via a hydrothermal process. This method can also be extended to synthesize rose-like Cl- or Br-doped Bi_2O_2CO_3 microspheres. Photoelectrochemical test supports the DFT calculation result that I- doping narrows the bandgap of Bi_2O_2CO_3 by forming two intermediate levels in its forbidden band. Further study reveals that I-doped Bi_2O_2CO_3 microspheres with optimized composition exhibit the best photocatalytic activity. Rhodamine B can be completely degraded within 6 min and about 90% of Cr(VI) can be reduced after 25 min under the irradiation of visible light (λ > 400 nm).

  2. A comprehensive investigation of tetragonal Gd-doped BiVO{sub 4} with enhanced photocatalytic performance under sun-light

    Energy Technology Data Exchange (ETDEWEB)

    Luo, Yangyang; Tan, Guoqiang, E-mail: tan3114@163.com; Dong, Guohua; Ren, Huijun; Xia, Ao

    2016-02-28

    Graphical abstract: - Highlights: • Tetragonal Gd-BiVO{sub 4} with enhanced photocatalytic activity was synthesized. • Gd doping can induce the phase transition from monoclinic to tetragonal BiVO{sub 4}. • GdVO{sub 4} seeds as crystal nucleus dominate the formation of tetragonal Gd-BiVO{sub 4}. • Tetragonal Gd-BiVO{sub 4} exhibits the excellent separation of electrons and holes. • The contribution of high photocatalytic activity under sun-light is from UV-light. - Abstract: Tetragonal Gd-doped BiVO{sub 4} having enhanced photocatalytic activity have been synthesized by a facile microwave hydrothermal method. The structural analysis indicates that Gd doping can induce the phase transition from monoclinic to tetragonal BiVO{sub 4}. The reaction results in precursor solutions imply that tetragonal GdVO{sub 4} seeds as crystal nucleus are the original and determined incentives to force the formation of tetragonal Gd-BiVO{sub 4}. The influences of the surface defect, band structure, and BET surface area on the improved photocatalytic activities of tetragonal Gd-doped BiVO{sub 4} are investigated systematically. The results demonstrate that the more surface oxygen deficiencies as active sites and the excellent mobility and separation of photogenerated electrons and holes are beneficial to the enhancement of the photocatalytic performance of tetragonal Gd-BiVO{sub 4}. The RhB photodegradation experiments indicate that the contribution of high photocatalytic activities under simulated sun-light is mainly from UV-light region due to the tetragonal structure feature. The best photocatalytic performance is obtained for tetragonal 10 at% Gd-BiVO{sub 4}, of which the RhB degradation rate can reach to 96% after 120 min simulated sun-light irradiation. The stable tetragonal Gd-BiVO{sub 4} with efficient mineralization will be a promising photocatalytic material applied in water purification.

  3. Ab-initio valence band spectra of Al, In doped ZnO

    International Nuclear Information System (INIS)

    Palacios, P.; Sanchez, K.; Wahnon, P.

    2009-01-01

    We present the structural and electronic characterization of n-doped (Aluminium or Indium) ZnO and the effect of the doping on the calculated photoelectron spectroscopy (PES) spectra. The fully-relaxed calculations have been made using the density functional theory, including a Hubbard correlation term that increases the Zn-3d states binding energy, and which matches the experimental values. The effect of Oxygen vacancies is also included in our study. Our results show that the new Al or In-donor levels appearing in the conduction band hybridize with the Oxygen-2p states and help decrease the resistivity of these doped systems as was found experimentally. The calculated PES spectra show a small enhancement in the intensity close to the chemical potential as a result of these new Al or In levels

  4. Fast and slow light property improvement in erbium-doped amplifier

    Science.gov (United States)

    Peng, P. C.; Wu, F. K.; Kao, W. C.; Chen, J.; Lin, C. T.; Chi, S.

    2013-01-01

    This work experimentally demonstrates improvement of the fast light property in erbium-doped amplifiers at room temperature. The difference between the signal power and the pump power associated with bending loss is used to control the signal power at the different positions of the erbium-doped fiber (EDF) to improve the fast light property. Periodic bending of the EDF increases the time advance of the probe signal by over 288%. Additionally, this concept also could improve the fast light property using coherent population oscillations in semiconductor optical amplifiers.

  5. Ce3+-Doping to Modulate Photoluminescence Kinetics for Efficient CsPbBr3 Nanocrystals Based Light-Emitting Diodes.

    Science.gov (United States)

    Yao, Ji-Song; Ge, Jing; Han, Bo-Ning; Wang, Kun-Hua; Yao, Hong-Bin; Yu, Hao-Lei; Li, Jian-Hai; Zhu, Bai-Sheng; Song, Ji-Zhong; Chen, Chen; Zhang, Qun; Zeng, Hai-Bo; Luo, Yi; Yu, Shu-Hong

    2018-03-14

    Inorganic perovskite CsPbBr 3 nanocrystals (NCs) are emerging, highly attractive light emitters with high color purity and good thermal stability for light-emitting diodes (LEDs). Their high photo/electroluminescence efficiencies are very important for fabricating efficient LEDs. Here, we propose a novel strategy to enhance the photo/electroluminescence efficiency of CsPbBr 3 NCs through doping of heterovalent Ce 3+ ions via a facile hot-injection method. The Ce 3+ cation was chosen as the dopant for CsPbBr 3 NCs by virtue of its similar ion radius and formation of higher energy level of conduction band with bromine in comparison with the Pb 2+ cation to maintain the integrity of perovskite structure without introducing additional trap states. It was found that by increasing the doping amount of Ce 3+ in CsPbBr 3 NCs to 2.88% (atomic percentage of Ce compared to Pb) the photoluminescence quantum yield (PLQY) of CsPbBr 3 NCs reached up to 89%, a factor of 2 increase in comparison with the native, undoped ones. The ultrafast transient absorption and time-resolved photoluminescence (PL) spectroscopy revealed that Ce 3+ -doping can significantly modulate the PL kinetics to enhance the PL efficiency of doped CsPbBr 3 NCs. As a result, the LED device fabricated by adopting Ce 3+ -doped CsPbBr 3 NCs as the emitting layers exhibited a pronounced improvement of electroluminescence with external quantum efficiency (EQE) from 1.6 to 4.4% via Ce 3+ -doping.

  6. Enhanced surface area, high Zn interstitial defects and band gap reduction in N-doped ZnO nanosheets coupled with BiVO{sub 4} leads to improved photocatalytic performance

    Energy Technology Data Exchange (ETDEWEB)

    Singh, Sonal [Deen Dayal Upadhyaya College, Dwarka, University of Delhi, New Delhi 110078 (India); Sharma, Rishabh, E-mail: rishabh.rammstien@gmail.com [Thin Film Laboratory, Department of Physics, Indian Institute of Technology, New Delhi 110016 (India); Mehta, Bodh Raj [Thin Film Laboratory, Department of Physics, Indian Institute of Technology, New Delhi 110016 (India)

    2017-07-31

    Highlights: • In this study, we report novel nitrogen doped ZnO (nanosheet)/BiVO{sub 4} nanocomposite with enhanced visible light photocatalytic activity tested on methylene blue dye. • In a typical composite synthesis process, individual metal oxides synthesized by chemical route were mixed through ultrasonication followed by annealing at the temperature of 400 °C. • To understand mechanism of action we carried out XRD, TEM, UV–vis spectroscopy, XPS, BET & PL of the samples. • Enhancement in photocatalytic performance of the composite was due to increased light absorption due to band gap reduction and formation intermediate band. • Also, charge exchange as per Z-scheme at the hetrojunction between N-ZnO and BiVO{sub 4} resulted in reduced charge recombination rate which is further responsible for enhancement in photocatalytic activity. - Abstract: For the first time, a series of Nitrogen-doped-ZnO nanosheet coupled with BiVO{sub 4} (N-ZnO/BiVO{sub 4}) heterojunctioned photocatalysts have been synthesized. The new N-ZnO/BiVO{sub 4} material has been prepared via a simple and effective method of precipitation followed by high temperature annealing process. The photocatalytic activities of the N-ZnO/BiVO{sub 4} composites were evaluated for the degradation of methylene blue (MB) a common organic pollutant under visible-light irradiation. The results revealed that photocatalytic activity of the coupled system was directly influenced by the percentage amount of BiVO{sub 4} in N-ZnO which affected the available exposed surface area for photoreactions. 30% N-ZnO/BiVO{sub 4} system exhibited remarkable performance than 10%N-ZnO/BiVO{sub 4}, 50%N-ZnO/BiVO{sub 4}, and also to their pristine counterparts. The composite demonstrated the degradation efficiency of 90% in 90 min which is 1.76 times the efficiency of pure ZnO for same time duration. This pronounced photocatalytic effect is ascribed to the reduced band gap and lowered recombination rate of ZnO due to

  7. Solvothermal syntheses of Bi and Zn co-doped TiO_2 with enhanced electron-hole separation and efficient photodegradation of gaseous toluene under visible-light

    International Nuclear Information System (INIS)

    Li, Juan-Juan; Cai, Song-Cai; Xu, Zhen; Chen, Xi; Chen, Jin; Jia, Hong-Peng; Chen, Jing

    2017-01-01

    Highlights: • Bi-Zn co-doped TiO_2 catalysts were prepared by solvothermal route. • The incorporation of Bi doping into the TiO_2 generates intermediate energy levels. • Bi and Zn doping showed the enhanced absorption in visible-light region. • Zn dopant acts as a mediator of interfacial charge transfer. • TiBi_1_._9_%Zn_1_%O_2 exhibited high photocatalytic degradation for toluene. - Abstract: This study investigated the effects of Bi doped and Bi-Zn co-doped TiO_2 on photodegradation of gaseous toluene. The doped TiO_2 with various concentration of metal was prepared using the solvothermal route and characterized by SEM, XRD, Raman, BET, DRS, XPS, PL and EPR. Their photocatalytic activities under visible-light irradiation were drastically influenced by the dopant content. The results showed that moderate metal doping levels were obviously beneficial for the toluene degradation, while high doping levels suppressed the photocatalytic activity. The photocatalytic degradation of toluene over TiBi_1_._9_%O_2 and TiBi_1_._9_%Zn_1_%O_2 can reach to 51% and 93%, respectively, which are much higher than 25% of TiO_2. Bi doping into TiO_2 lattice generates new intermediate energy level of Bi below the CB edge of TiO_2. The electron excitation from the VB to Bi orbitals results in the decreased band gap, extended absorption of visible-light and thus enhances its photocatalytic efficiency. Zn doping not only further enhances the absorption in this visible-light region, but also Zn dopant exists as the form of ZnO crystallites located on the interfaces of TiO_2 agglomerates and acts as a mediator of interfacial charge transfer to suppress the electron-hole recombination. These synergistic effects are responsible for the enhanced photocatalytic performance.

  8. Electrodeposition of Cu-doped ZnO nanowire arrays and heterojunction formation with p-GaN for color tunable light emitting diode applications

    International Nuclear Information System (INIS)

    Lupan, O.; Pauporté, T.; Viana, B.; Aschehoug, P.

    2011-01-01

    Highlights: ► High quality copper-doped zinc oxide nanowires were electrochemically grown at low temperature. ► ZnO:Cu nanowires have been epitaxially grown on Mg-doped p-GaN single-crystalline layers. ► The (ZnO:Cu NWs)/(p-GaN:Mg) heterojunction was used to fabricate a light-emitting diode structure. ► The photo- and electroluminescence emission was red-shifted to the violet spectral region compared to pure ZnO. ► The results are of importance for band-gap engineering of ZnO and for color-tunable LED. - Abstract: Copper-doped zinc oxide (ZnO:Cu) nanowires (NWs) were electrochemically deposited at low temperature on fluor-doped tin oxide (FTO) substrates. The electrochemical behavior of the Cu–Zn system for Cu-doped ZnO electrodeposition was studied and the electrochemical reaction mechanism is discussed. The synthesized ZnO arrayed layers were investigated by using SEM, XRD, EDX, photoluminescence and Raman techniques. X-ray diffraction analysis demonstrates a decrease in the lattice parameters of Cu-doped ZnO NWs. Structural analyses show that the nanomaterial is of hexagonal structure with the Cu incorporated in ZnO NWs probably by substituting zinc in the host lattice. Photoluminescence studies on pure and Cu-doped ZnO NWs shows that the near band edge emission is red-shifted by about 5 or 12 nm depending on Cu(II) concentration in the electrolytic bath solution (3 or 6 μmol l −1 ). Cu-doped ZnO NWs have been also epitaxially grown on Mg doped p-GaN single-crystalline layers and the (ZnO:Cu NWs)/(p-GaN:Mg) heterojunction has been used to fabricate a light-emitting diode (LED) structure. The emission was red-shifted to the visible violet spectral region compared to pure ZnO. The present work demonstrates the ability of electrodeposition to produce high quality ZnO nanowires with tailored optical properties by doping. The obtained results are of great importance for further studies on bandgap engineering of ZnO, for color-tunable LED applications

  9. CNT supported Mn-doped ZnO nanoparticles: simple synthesis and improved photocatalytic activity for degradation of malachite green dye under visible light

    Science.gov (United States)

    Mohamed, R. M.; Shawky, Ahmed

    2018-03-01

    Hexagonal ZnO nanoparticles doped with Mn and supported with a minor amount of carbon nanotubes (CNTs) were synthesized through a simple coprecipitation-ultrasonication process with high yield. The effect of Mn doping, as well as CNTs addition on structure, surface morphology and texture, optical and electronic properties, was studied. We found that just 1% Mn doping and 1% CNT addition on ZnO showed the best crystallinity, highest surface area, improved visible light absorption, and a lowest estimated band gap of 2.6 eV with minimum charge recombination as revealed from photoluminescence spectra. The application of the optimum composition of the synthesized sample for the photodegradation of malachite green dye showed enhanced photocatalytic activity > 95% under visible light irradiation within 120 min at a minimum dosage of 0.1 g L-1 without any using of hole scavenger or changing the pH. This work highlighting the humble preparation procedure and develops photocatalysis research for real industrial applications.

  10. Effects of crystallite structure and interface band alignment on the photocatalytic property of bismuth ferrite/ (N-doped) graphene composites

    International Nuclear Information System (INIS)

    Li, Pai; Chen, Qiang; Lin, Yinyin; Chang, Gang; He, Yunbin

    2016-01-01

    Bismuth ferrite/graphene (N-doped graphene) photocatalysts are successfully prepared by a facile and effective two-step hydrothermal method. Bismuth ferrite/graphene shows superior photocatalytic activity compared with bismuth ferrite/N-doped graphene and pure BiFeO 3 . X-ray diffraction, scanning electron microscopy and energy-dispersive spectroscopy analyses indicate that Bi 25 FeO 40 crystalline phase is obtained with the addition of graphene, while BiFeO 3 is formed under the same hydrothermal conditions in the presence of N-doped graphene. Core-level and valence-band X-ray photoelectron spectroscopy analyses reveal a downward band bending of bismuth ferrite (∼0.5 eV) at the interface of the bismuth ferrite/(N-doped) graphene composites, which facilitates the electron transfer from bismuth ferrite to (N-doped) graphene and suppresses the recombination of photo-generated electron–hole pairs. This downward bending band alignment at the interface supposes to be the main mechanism underlying the enhanced photocatalytic activity of the bismuth ferrite/graphene composites that are currently of great interest in the photocatalysis field. - Highlights: • Bismuth ferrite/(N-doped) graphene composites were prepared by a hydrothermal method. • Bi 25 FeO 40 and BiFeO 3 were obtained with presence of graphene and N-graphene, respectively. • Bi 25 FeO 40 /graphene shows superior photocatalytic activity over BiFeO 3 and BiFeO 3 /N-graphene. • A downward band bending (∼0.5 eV) of bismuth ferrite exists at the composites interface. • The downward band bending supposes to be the mechanism for the enhanced photocatalytic activity.

  11. Enhanced persistent red luminescence in Mn2+-doped (Mg,Zn)GeO3 by electron trap and conduction band engineering

    Science.gov (United States)

    Katayama, Yumiko; Kayumi, Tomohiro; Ueda, Jumpei; Tanabe, Setsuhisa

    2018-05-01

    The effect of Zn substitution on the persistent luminescence properties of MgGeO3:Mn2+-Ln3+ (Ln = Eu and Yb) red phosphors was investigated. The intensity of the persistent luminescence of the Eu3+ co-doped phosphors increased with increasing Zn content, whereas that of the Yb3+ co-doped samples decreased. For both series of lanthanide co-doped samples, the thermoluminescence (TL) glow peak shifted to the lower temperature side with increasing Zn content. These persistent luminescence properties were well explained in terms of lowering of the bottom of the conduction band relative to the ground state of the divalent lanthanide ions. Especially, in Eu3+ co-doped system, TL peak shifted from 520 K to 318 K by 50% Zn substitution. The persistent radiance of the (Mg0.5 Zn0.5)GeO3: Mn2+-Eu3+ sample at 1 h after ceasing UV light was 46 times stronger than that of MgGeO3:Mn2+-Eu3+, and 11 times stronger than that of ZnGa2O4: Cr3+ standard deep red persistent phosphor.

  12. The investigation of Ce doped ZnO crystal: The electronic, optical and magnetic properties

    Science.gov (United States)

    Wen, Jun-Qing; Zhang, Jian-Min; Qiu, Ze-Gang; Yang, Xu; Li, Zhi-Qin

    2018-04-01

    The electronic, optical and magnetic properties of Ce doped ZnO crystal have been studied by using first principles method. The research of formation energies show that Ce doped ZnO is energetically stable, and the formation energies reduce from 6.25% to 12.5% for Ce molar percentage. The energy band is still direct band gap after Ce doped, and band gap increases with the increase of Cesbnd Ce distance. The Fermi level moves upward into conduction band and the DOS moves to lower energy with the increase of Ce concentration, which showing the properties of n-type semiconductor. The calculated optical properties imply that Ce doped causes a red-shift of absorption peaks, and enhances the absorption of the visible light. The transition from ferromagnetic to antiferromagnetic has been found in Ce doped ZnO.

  13. Photocatalytic degradation of selected herbicides in aqueous suspensions of doped titania under visible light irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Sojic, Daniela V., E-mail: daniela.sojic@dh.uns.ac.rs [Department of Chemistry, Biochemistry and Environmental Protection, Faculty of Sciences, University of Novi Sad, Trg D. Obradovica 3, 21000 Novi Sad (Serbia); Despotovic, Vesna N., E-mail: vesna.despotovic@dh.uns.ac.rs [Department of Chemistry, Biochemistry and Environmental Protection, Faculty of Sciences, University of Novi Sad, Trg D. Obradovica 3, 21000 Novi Sad (Serbia); Abazovic, Nadica D., E-mail: kiki@vinca.rs [Vinca Institute of Nuclear Sciences, 11001 Beograd, PO Box 522 (Serbia); Comor, Mirjana I., E-mail: mirjanac@vinca.rs [Vinca Institute of Nuclear Sciences, 11001 Beograd, PO Box 522 (Serbia); Abramovic, Biljana F., E-mail: biljana.abramovic@dh.uns.ac.rs [Department of Chemistry, Biochemistry and Environmental Protection, Faculty of Sciences, University of Novi Sad, Trg D. Obradovica 3, 21000 Novi Sad (Serbia)

    2010-07-15

    The aim of this work was to study the efficiency of Fe- and N-doped titania suspensions in the photocatalytic degradation of the herbicides RS-2-(4-chloro-o-tolyloxy)propionic acid (mecoprop, MCPP), (4-chloro-2-methylphenoxy)acetic acid (MCPA), and 3,6-dichloropyridine-2-carboxylic acid (clopyralid, CP) under the visible light ({lambda} {>=} 400 nm) irradiation. The obtained results were compared with those of the corresponding undoped TiO{sub 2} (rutile/anatase) and of the most frequently used TiO{sub 2} Degussa P25. Computational modeling procedures were used to optimize geometry and molecular electrostatic potentials of MCPP, MCPA and CP and discuss the obtained results. The results indicate that the efficiency of photocatalytic degradation is greatly influenced by the molecular structure of the compound. Lowering of the band gap of titanium dioxide by doping is not always favorable for increasing photocatalytic efficiency of degradation.

  14. Defect properties of Sn- and Ge-doped ZnTe: suitability for intermediate-band solar cells

    Science.gov (United States)

    Flores, Mauricio A.

    2018-01-01

    We investigate the electronic structure and defect properties of Sn- and Ge- doped ZnTe by first-principles calculations within the DFT+GW formalism. We find that ({{{Sn}}}{{Zn}}) and ({{{Ge}}}{{Zn}}) introduce isolated energy levels deep in the band gap of ZnTe, derived from Sn-5s and Ge-4s states, respectively. Moreover, the incorporation of Sn and Ge on the Zn site is favored in p-type ZnTe, in both Zn-rich and Te-rich environments. The optical absorption spectra obtained by solving the Bethe-Salpeter equation reveals that sub-bandgap absorptance is greatly enhanced due to the formation of the intermediate band. Our results suggest that Sn- and Ge-doped ZnTe would be a suitable material for the development of intermediate-band solar cells, which have the potential to achieve efficiencies beyond the single-junction limit.

  15. Origin of the Enhanced Visible-Light Absorption in N-Doped Bulk Anatase TiO 2 from First-Principles Calculations

    KAUST Repository

    Harb, Moussab

    2011-10-06

    Extension of the absorption properties of TiO2 photocatalytic materials to the visible part of the solar spectrum is of major importance for energy and cleaning up applications. We carry out a systematic study of the N-doped anatase TiO2 material using spin-polarized density functional theory (DFT) and the range-separated hybrid HSE06 functional. The thermodynamic stability of competitive N-doped TiO2 structural configurations is studied as a function of the oxygen chemical potential and of various chemical doping agents: N2, (N2 + H2), NH3, N2H4. We show that the diamagnetic TiO (2-3x)N2x system corresponding to a separated substitutional N species (with 2-4% N impurities) and formation of one-half concentration of O vacancies (1-2 atom %) is an optimal configuration thermodynamically favored by NH3, N2H4, and (N2 + H2) chemical doping agents presenting a dual nitrating-reducing character. The simulated UV-vis absorption spectra using the perturbation theory (DFPT) approach demonstrates unambiguously that the diamagnetic TiO(2-3x)N2x system exhibits the enhanced optical absorption in N-doped TiO2 under visible-light irradiation. Electronic analysis further reveals a band gap narrowing of 0.6 eV induced by delocalized impurity states located at the top of the valence band of TiO 2. A fruitful comparison with experimental data is furnished. © 2011 American Chemical Society.

  16. Defect-band mediated ferromagnetism in Gd-doped ZnO thin films

    KAUST Repository

    Venkatesh, S.

    2015-01-07

    Gd-doped ZnO thin films prepared by pulsed laser deposition with Gd concentrations varying from 0.02–0.45 atomic percent (at. %) showed deposition oxygen pressure controlled ferromagnetism. Thin films prepared with Gd dopant levels (band formed due to oxygen deficiency related defect complexes. Mott\\'s theory of variable range of hopping conduction confirms the formation of the impurity/defect band near the Fermi level.

  17. Study of sub band gap absorption of Sn doped CdSe thin films

    International Nuclear Information System (INIS)

    Kaur, Jagdish; Rani, Mamta; Tripathi, S. K.

    2014-01-01

    The nanocrystalline thin films of Sn doped CdSe at different dopants concentration are prepared by thermal evaporation technique on glass substrate at room temperature. The effect of Sn doping on the optical properties of CdSe has been studied. A decrease in band gap value is observed with increase in Sn concentration. Constant photocurrent method (CPM) is used to study the absorption coefficient in the sub band gap region. Urbach energy has been obtained from CPM spectra which are found to increase with amount of Sn dopants. The refractive index data calculated from transmittance is used for the identification of oscillator strength and oscillator energy using single oscillator model which is found to be 7.7 and 2.12 eV, 6.7 and 2.5 eV for CdSe:Sn 1% and CdSe:Sn 5% respectively

  18. Study of sub band gap absorption of Sn doped CdSe thin films

    Energy Technology Data Exchange (ETDEWEB)

    Kaur, Jagdish; Rani, Mamta [Department of Physics, Panjab University, Chandigarh- 160014 (India); Tripathi, S. K., E-mail: surya@pu.ac.in [Centre of Advanced Study in Physics, Panjab University, Chandigarh- 160014 (India)

    2014-04-24

    The nanocrystalline thin films of Sn doped CdSe at different dopants concentration are prepared by thermal evaporation technique on glass substrate at room temperature. The effect of Sn doping on the optical properties of CdSe has been studied. A decrease in band gap value is observed with increase in Sn concentration. Constant photocurrent method (CPM) is used to study the absorption coefficient in the sub band gap region. Urbach energy has been obtained from CPM spectra which are found to increase with amount of Sn dopants. The refractive index data calculated from transmittance is used for the identification of oscillator strength and oscillator energy using single oscillator model which is found to be 7.7 and 2.12 eV, 6.7 and 2.5 eV for CdSe:Sn 1% and CdSe:Sn 5% respectively.

  19. Salt-Doped Polymer Light-Emitting Devices

    Science.gov (United States)

    Gautier, Bathilde

    Polymer Light-Emitting Electrochemical Cells (PLECs) are solid state devices based on the in situ electrochemical doping of the luminescent polymer and the formation of a p-n junction where light is emitted upon the application of a bias current or voltage. PLECs answer the drawbacks of polymer light-emitting diodes as they do not require an ultra-thin active layer nor are they reliant on low work function cathode materials that are air unstable. However, because of the dynamic nature of the doping, they suffer from slow response times and poor stability over time. Frozen-junction PLECs offer a solution to these drawbacks, yet they are impractical due to their sub-ambient operation temperature requirement. Our work presented henceforth aims to achieve room temperature frozen-junction PLECS. In order to do that we removed the ion solvating/transporting polymer from the active layer, resulting in a luminescent polymer combined solely with a salt sandwiched between an ITO electrode and an aluminum electrode. The resulting device was not expected to operate like a PLEC due to the absence of an ion-solvating and ion-transporting medium. However, we discovered that the polymer/salt devices could be activated by applying a large voltage bias, resulting in much higher current and luminance. More important, the activated state is quasi static. Devices based on the well-known orange-emitting polymer MEH-PPV displayed a luminance storage half-life of 150 hours when activated by forward bias (ITO biased positively with respect to the aluminum) and 200 hours when activated by reverse bias. More remarkable yet, devices based on a green co-polymer displayed no notable decay in current density or luminance even after being stored for 1200 hours at room temperature! PL imaging under UV excitation demonstrates the presence of doping. These devices are described herein along with an explanation of their operating mechanisms.

  20. Opening the band gap of graphene through silicon doping for the improved performance of graphene/GaAs heterojunction solar cells.

    Science.gov (United States)

    Zhang, S J; Lin, S S; Li, X Q; Liu, X Y; Wu, H A; Xu, W L; Wang, P; Wu, Z Q; Zhong, H K; Xu, Z J

    2016-01-07

    Graphene has attracted increasing interest due to its remarkable properties. However, the zero band gap of monolayered graphene limits it's further electronic and optoelectronic applications. Herein, we have synthesized monolayered silicon-doped graphene (SiG) with large surface area using a chemical vapor deposition method. Raman and X-ray photoelectron spectroscopy measurements demonstrate that the silicon atoms are doped into graphene lattice at a doping level of 2.7-4.5 at%. Electrical measurements based on a field effect transistor indicate that the band gap of graphene has been opened via silicon doping without a clear degradation in carrier mobility, and the work function of SiG, deduced from ultraviolet photoelectron spectroscopy, was 0.13-0.25 eV larger than that of graphene. Moreover, when compared with the graphene/GaAs heterostructure, SiG/GaAs exhibits an enhanced performance. The performance of 3.4% silicon doped SiG/GaAs solar cell has been improved by 33.7% on average, which was attributed to the increased barrier height and improved interface quality. Our results suggest that silicon doping can effectively engineer the band gap of monolayered graphene and SiG has great potential in optoelectronic device applications.

  1. Light-induced enhancement of the minority carrier lifetime in boron-doped Czochralski silicon passivated by doped silicon nitride

    International Nuclear Information System (INIS)

    Wang, Hongzhe; Chen, Chao; Pan, Miao; Sun, Yiling; Yang, Xi

    2015-01-01

    Graphical abstract: - Highlights: • The phosphorus-doped SiN x with negative fixed charge was deposited by PECVD. • The increase of lifetime was observed on P-doped SiN x passivated Si under illumination. • The enhancement of lifetime was caused by the increase of negative fixed charges. - Abstract: This study reports a doubling of the effective minority carrier lifetime under light soaking conditions, observed in a boron-doped p-type Czochralski grown silicon wafer passivated by a phosphorus-doped silicon nitride thin film. The analysis of capacitance–voltage curves revealed that the fixed charge in this phosphorus-doped silicon nitride film was negative, which was unlike the well-known positive fixed charges observed in traditional undoped silicon nitride. The analysis results revealed that the enhancement phenomenon of minority carrier lifetime was caused by the abrupt increase in the density of negative fixed charge (from 7.2 × 10 11 to 1.2 × 10 12 cm −2 ) after light soaking.

  2. Two-band analysis of hole mobility and Hall factor for heavily carbon-doped p-type GaAs

    Science.gov (United States)

    Kim, B. W.; Majerfeld, A.

    1996-02-01

    We solve a pair of Boltzmann transport equations based on an interacting two-isotropic-band model in a general way first to get transport parameters corresponding to the relaxation time. We present a simple method to calculate effective relaxation times, separately for each band, which compensate for the inherent deficiencies in using the relaxation time concept for polar optical-phonon scattering. Formulas for calculating momentum relaxation times in the two-band model are presented for all the major scattering mechanisms of p-type GaAs for simple, practical mobility calculations. In the newly proposed theoretical framework, first-principles calculations for the Hall mobility and Hall factor of p-type GaAs at room temperature are carried out with no adjustable parameters in order to obtain direct comparisons between the theory and recently available experimental results. In the calculations, the light-hole-band nonparabolicity is taken into account on the average by the use of energy-dependent effective mass obtained from the kṡp method and valence-band anisotropy is taken partly into account by the use the Wiley's overlap function.. The calculated Hall mobilities show a good agreement with our experimental data for carbon-doped p-GaAs samples in the range of degenerate hole densities. The calculated Hall factors show rH=1.25-1.75 over hole densities of 2×1017-1×1020 cm-3.

  3. Conduction band edge effective mass of La-doped BaSnO{sub 3}

    Energy Technology Data Exchange (ETDEWEB)

    James Allen, S., E-mail: allen@itst.ucsb.edu; Law, Ka-Ming [Physics Department, University of California, Santa Barbara, California 93106-5100 (United States); Raghavan, Santosh; Schumann, Timo; Stemmer, Susanne [Materials Department, University of California, Santa Barbara, California 93106-5050 (United States)

    2016-06-20

    BaSnO{sub 3} has attracted attention as a promising material for applications requiring wide band gap, high electron mobility semiconductors, and moreover possesses the same perovskite crystal structure as many functional oxides. A key parameter for these applications and for the interpretation of its properties is the conduction band effective mass. We measure the plasma frequency of La-doped BaSnO{sub 3} thin films by glancing incidence, parallel-polarized resonant reflectivity. Using the known optical dielectric constant and measured electron density, the resonant frequency determines the band edge electron mass to be 0.19 ± 0.01. The results allow for testing band structure calculations and transport models.

  4. The structural, electronic and optical properties of Nd doped ZnO using first-principles calculations

    Science.gov (United States)

    Wen, Jun-Qing; Zhang, Jian-Min; Chen, Guo-Xiang; Wu, Hua; Yang, Xu

    2018-04-01

    The density functional theory calculations using general gradient approximation (GGA) applying Perdew-Burke-Ernzerhof (PBE) as correlation functional have been systematically performed to research the formation energy, the electronic structures, band structures, total and partial DOS, and optical properties of Nd doping ZnO with the content from 6.25% to 12.5%. The formation energies are negative for both models, which show that two structures are energetically stable. Nd doping ZnO crystal is found to be a direct band gap semiconductor and Fermi level shifts upward into conduction band, which show the properties of n-type semiconductor. Band structures are more compact after Nd doping ZnO, implying that Nd doping induces the strong interaction between different atoms. Nd doping ZnO crystal presents occupied states at near Fermi level, which mainly comes from the Nd 4f orbital. The calculated optical properties imply that Nd doping causes a red-shift of absorption peaks, and enhances the absorption of the visible light.

  5. Observation of an electron band above the Fermi level in FeTe0.55Se0.45 from in-situ surface doping

    International Nuclear Information System (INIS)

    Zhang, P.; Ma, J.; Qian, T.; Richard, P.; Ding, H.; Xu, N.; Xu, Y.-M.; Fedorov, A. V.; Denlinger, J. D.; Gu, G. D.

    2014-01-01

    We used in-situ potassium (K) evaporation to dope the surface of the iron-based superconductor FeTe 0.55 Se 0.45 . The systematic study of the bands near the Fermi level confirms that electrons are doped into the system, allowing us to tune the Fermi level of this material and to access otherwise unoccupied electronic states. In particular, we observe an electron band located above the Fermi level before doping that shares similarities with a small three-dimensional pocket observed in the cousin, heavily electron-doped KFe 2−x Se 2 compound.

  6. Opening the band gap of graphene through silicon doping for the improved performance of graphene/GaAs heterojunction solar cells

    Science.gov (United States)

    Zhang, S. J.; Lin, S. S.; Li, X. Q.; Liu, X. Y.; Wu, H. A.; Xu, W. L.; Wang, P.; Wu, Z. Q.; Zhong, H. K.; Xu, Z. J.

    2015-12-01

    Graphene has attracted increasing interest due to its remarkable properties. However, the zero band gap of monolayered graphene limits it's further electronic and optoelectronic applications. Herein, we have synthesized monolayered silicon-doped graphene (SiG) with large surface area using a chemical vapor deposition method. Raman and X-ray photoelectron spectroscopy measurements demonstrate that the silicon atoms are doped into graphene lattice at a doping level of 2.7-4.5 at%. Electrical measurements based on a field effect transistor indicate that the band gap of graphene has been opened via silicon doping without a clear degradation in carrier mobility, and the work function of SiG, deduced from ultraviolet photoelectron spectroscopy, was 0.13-0.25 eV larger than that of graphene. Moreover, when compared with the graphene/GaAs heterostructure, SiG/GaAs exhibits an enhanced performance. The performance of 3.4% silicon doped SiG/GaAs solar cell has been improved by 33.7% on average, which was attributed to the increased barrier height and improved interface quality. Our results suggest that silicon doping can effectively engineer the band gap of monolayered graphene and SiG has great potential in optoelectronic device applications.Graphene has attracted increasing interest due to its remarkable properties. However, the zero band gap of monolayered graphene limits it's further electronic and optoelectronic applications. Herein, we have synthesized monolayered silicon-doped graphene (SiG) with large surface area using a chemical vapor deposition method. Raman and X-ray photoelectron spectroscopy measurements demonstrate that the silicon atoms are doped into graphene lattice at a doping level of 2.7-4.5 at%. Electrical measurements based on a field effect transistor indicate that the band gap of graphene has been opened via silicon doping without a clear degradation in carrier mobility, and the work function of SiG, deduced from ultraviolet photoelectron

  7. Efficient photocatalytic activity with carbon-doped SiO2 nanoparticles

    KAUST Repository

    Zhang, Dongen

    2013-01-01

    Photocatalysis provides a \\'green\\' approach to completely eliminate various kinds of contaminants that are fatal for current environmental and energy issues. Semiconductors are one of the most frequently used photocatalysts as they can absorb light over a wide spectral range. However, it is also well known that naked SiO2 is not an efficient photocatalyst due to its relatively large band gap, which could only absorb shortwave ultraviolet light. In this report, nanoscale particles of carbon-doped silicon dioxide (C-doped SiO2) for use in photocatalysis were successfully prepared by a facile one-pot thermal process using tetraethylorthosilicate (TEOS) as the source of both silicon and carbon. These particles were subsequently characterized by thermogravimetric analysis, X-ray diffraction, standard and high resolution transmission electron microscopy and X-ray photoelectron spectroscopy. The C-doped SiO2 displayed outstanding photocatalytic properties, as evidenced by its catalysis of Rhodamine B degradation under near-UV irradiation. We propose that carbon doping of the SiO2 lattice creates new energy states between the bottom of the conduction band and the top of the valence band, which narrows the band gap of the material. As a result, the C-doped SiO2 nanoparticles exhibit excellent photocatalytic activities in a neutral environment. The novel synthesis reported herein for this material is both energy efficient and environmentally friendly and as such shows promise as a technique for low-cost, readily scalable industrial production. © 2013 The Royal Society of Chemistry.

  8. Synthesis of carbon-doped nanosheets m-BiVO{sub 4} with three-dimensional (3D) hierarchical structure by one-step hydrothermal method and evaluation of their high visible-light photocatalytic property

    Energy Technology Data Exchange (ETDEWEB)

    Zhao, Deqiang; Zong, Wenjuan [Chongqing University, Key Laboratory of Three Gorges Reservoir Region’s Eco-Environment Ministry of Education and National Centre for International Research of Low-carbon and Green Buildings (China); Fan, Zihong [School of Environmental and Biological Engineering Chongqing Technology and Business University (China); Fang, Yue-Wen [East China Normal University, Key Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronic Engineering (China); Xiong, Shimin; Du, Mao; Wu, Tianhui; Ji, Fangying, E-mail: jfy@cqu.edu.cn; Xu, Xuan, E-mail: xuxuan@cqu.edu.cn [Chongqing University, Key Laboratory of Three Gorges Reservoir Region’s Eco-Environment Ministry of Education and National Centre for International Research of Low-carbon and Green Buildings (China)

    2017-04-15

    To achieve an efficient visible-light absorption and degradation of bismuth vanadate (BiVO{sub 4}), in this paper, a carbon-doped (C-doped) nanosheets monoclinic BiVO{sub 4} (m-BiVO{sub 4}), with thicknesses within 19.86 ± 8.48 nm, was synthesized using polyvinylpyrrolidone K-30 (PVP) as a template and l-carbonic as the carbon source by one-step hydrothermal synthesis method. This C-doped BiVO{sub 4} in three-dimensional (3D) hierarchical structure enjoys high visible-light photocatalytic property. The samples were characterized using x-ray diffraction, scanning electron microscope, Raman spectra, energy dispersive spectrometer, transmission electron microscope, x-ray photoelectron spectroscopy, UV–Vis diffused reflectance spectroscopy, specific surface area, electron spin resonance, and transient photocurrent response, photoluminescence spectra, and incident-photon-to-current conversion efficiency, respectively. What is more, we studied the C-doping effect on the band-gap energy of BiVO{sub 4} based on First-principles. X-ray diffraction analysis showed that all photocatalysts were in the same single monoclinic scheelite structure. According to the other characterization results, the element C was successfully doped in BiVO{sub 4}, resulting in the 3D hierarchical structure of C-doped BiVO{sub 4} (P-L-BiVO{sub 4}). We speculated that it could be the directional coalescence mechanism by which the l-cysteine promoted the two-dimensional growth and C-doping process of BiVO{sub 4}, thus leading to the formation of nanosheets which were then promoted into 3D self-assembly by PVP and the shortening of the band gap. Among all samples, P-L-BiVO{sub 4} can make the highest removal ratio of rhodamine B under visible-light irradiation. The stability of P-L-BiVO{sub 4} was verified by recycle experiments. It showed that P-L-BiVO{sub 4} had strong visible-light absorption behavior and high electron–hole separation efficiency and stability, making a significant

  9. Study on electroluminescence processes in dye-doped organic light-emitting diodes

    Energy Technology Data Exchange (ETDEWEB)

    Li Weizhi [State Key Laboratory of Electronic Thin Films and Integrated devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu 610054 (China)], E-mail: leewz@uestc.edu.cn; Jiang Yadong; Wang Tao [State Key Laboratory of Electronic Thin Films and Integrated devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu 610054 (China)

    2008-07-15

    Electroluminescence (EL) mechanism of dye-doped organic light-emitting diodes (OLEDs) was investigated by using three familiar fluorescent dyes, i.e., 5,12-Dihydro-5,12-dimethylquino [2,3-b]acridine-7,14-dione (DMQA), 4-(dicyanomethylene)-2-t-butyl-6(1,1,7,7-tetramethyljulolidyl-9-enyl) -4H-pyran(DCJTB), and 5,6,11,12-tetraphenylnaphthacene (Rubrene). EL spectra of the doped devices with structure of indium tin oxide (ITO)/N,N'-bis-(1-naphthyl)-N,N'-diphenyl-1,1'-biphenyl-4,4'- diamine (NPB) (40 nm)/tris-(8-hydroxyquinolate)-aluminum (Alq{sub 3}) (x nm, x=0-40 nm)/dye: Alq{sub 3} (weight ratio{approx}1%, 2 nm)/Alq{sub 3} (48-x nm)/MgAg indicated that direct carrier trapping (DCT) process dominated light emission of devices. As a result, investigation of carrier-recombination site via doping, which is conventionally applied in OLEDs, is questionable since the doping site and the dopant itself may significantly influence the carrier-recombination process in the doped devices.

  10. Electrostatic tuning of Kondo effect in a rare-earth-doped wide-band-gap oxide

    KAUST Repository

    Li, Yongfeng; Deng, Rui; Lin, Weinan; Tian, Yufeng; Peng, Haiyang; Yi, Jiabao; Yao, Bin; Wu, Tao

    2013-01-01

    As a long-lived theme in solid-state physics, the Kondo effect reflects the many-body physics involving the short-range Coulomb interactions between itinerant electrons and localized spins in metallic materials. Here we show that the Kondo effect is present in ZnO, a prototypical wide-band-gap oxide, doped with a rare-earth element (Gd). The localized 4f electrons of Gd ions do not produce remanent magnetism, but interact strongly with the host electrons, giving rise to a saturating resistance upturn and negative magnetoresistance at low temperatures. Furthermore, the Kondo temperature and resistance can be electrostatically modulated using electric-double-layer gating with liquid ionic electrolyte. Our experiments provide the experimental evidence of tunable Kondo effect in ZnO, underscoring the magnetic interactions between localized and itinerant electrons and the emergent transport behaviors in such doped wide-band-gap oxides.

  11. Electrostatic tuning of Kondo effect in a rare-earth-doped wide-band-gap oxide

    KAUST Repository

    Li, Yongfeng

    2013-04-29

    As a long-lived theme in solid-state physics, the Kondo effect reflects the many-body physics involving the short-range Coulomb interactions between itinerant electrons and localized spins in metallic materials. Here we show that the Kondo effect is present in ZnO, a prototypical wide-band-gap oxide, doped with a rare-earth element (Gd). The localized 4f electrons of Gd ions do not produce remanent magnetism, but interact strongly with the host electrons, giving rise to a saturating resistance upturn and negative magnetoresistance at low temperatures. Furthermore, the Kondo temperature and resistance can be electrostatically modulated using electric-double-layer gating with liquid ionic electrolyte. Our experiments provide the experimental evidence of tunable Kondo effect in ZnO, underscoring the magnetic interactions between localized and itinerant electrons and the emergent transport behaviors in such doped wide-band-gap oxides.

  12. Solvothermal syntheses of Bi and Zn co-doped TiO{sub 2} with enhanced electron-hole separation and efficient photodegradation of gaseous toluene under visible-light

    Energy Technology Data Exchange (ETDEWEB)

    Li, Juan-Juan [Center for Excellence in Regional Atmospheric Environment, and Key Laboratory of Urban Pollutant Conversion, Institute of Urban Environment, Chinese Academy of Sciences, Xiamen 361021 (China); Cai, Song-Cai [Center for Excellence in Regional Atmospheric Environment, and Key Laboratory of Urban Pollutant Conversion, Institute of Urban Environment, Chinese Academy of Sciences, Xiamen 361021 (China); University of Chinese Academy of Sciences, Beijing, 100049 (China); Xu, Zhen [Center for Excellence in Regional Atmospheric Environment, and Key Laboratory of Urban Pollutant Conversion, Institute of Urban Environment, Chinese Academy of Sciences, Xiamen 361021 (China); Chen, Xi [Center for Excellence in Regional Atmospheric Environment, and Key Laboratory of Urban Pollutant Conversion, Institute of Urban Environment, Chinese Academy of Sciences, Xiamen 361021 (China); University of Chinese Academy of Sciences, Beijing, 100049 (China); Chen, Jin [Center for Excellence in Regional Atmospheric Environment, and Key Laboratory of Urban Pollutant Conversion, Institute of Urban Environment, Chinese Academy of Sciences, Xiamen 361021 (China); Jia, Hong-Peng, E-mail: hpjia@iue.ac.cn [Center for Excellence in Regional Atmospheric Environment, and Key Laboratory of Urban Pollutant Conversion, Institute of Urban Environment, Chinese Academy of Sciences, Xiamen 361021 (China); Chen, Jing, E-mail: jing.chen@fjirsm.ac.cn [State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou 350002 (China)

    2017-03-05

    Highlights: • Bi-Zn co-doped TiO{sub 2} catalysts were prepared by solvothermal route. • The incorporation of Bi doping into the TiO{sub 2} generates intermediate energy levels. • Bi and Zn doping showed the enhanced absorption in visible-light region. • Zn dopant acts as a mediator of interfacial charge transfer. • TiBi{sub 1.9%}Zn{sub 1%}O{sub 2} exhibited high photocatalytic degradation for toluene. - Abstract: This study investigated the effects of Bi doped and Bi-Zn co-doped TiO{sub 2} on photodegradation of gaseous toluene. The doped TiO{sub 2} with various concentration of metal was prepared using the solvothermal route and characterized by SEM, XRD, Raman, BET, DRS, XPS, PL and EPR. Their photocatalytic activities under visible-light irradiation were drastically influenced by the dopant content. The results showed that moderate metal doping levels were obviously beneficial for the toluene degradation, while high doping levels suppressed the photocatalytic activity. The photocatalytic degradation of toluene over TiBi{sub 1.9%}O{sub 2} and TiBi{sub 1.9%}Zn{sub 1%}O{sub 2} can reach to 51% and 93%, respectively, which are much higher than 25% of TiO{sub 2}. Bi doping into TiO{sub 2} lattice generates new intermediate energy level of Bi below the CB edge of TiO{sub 2}. The electron excitation from the VB to Bi orbitals results in the decreased band gap, extended absorption of visible-light and thus enhances its photocatalytic efficiency. Zn doping not only further enhances the absorption in this visible-light region, but also Zn dopant exists as the form of ZnO crystallites located on the interfaces of TiO{sub 2} agglomerates and acts as a mediator of interfacial charge transfer to suppress the electron-hole recombination. These synergistic effects are responsible for the enhanced photocatalytic performance.

  13. Color improvement of white-light through Mn-enhancing yellow-green emission of SrSi2O2N2:Eu phosphor for white light emitting diodes

    International Nuclear Information System (INIS)

    Fei Qinni; Liu Yanhua; Gu Tiecheng; Wang Dajian

    2011-01-01

    Photoluminescence (PL) enhancement of SrSi 2 O 2 N 2 :Eu and the resultant color improvement of white-light were investigated via co-doping Mn with Eu. We observed that a unique absorption of host lattice of SrSi 2 O 2 N 2 and its visible band emission peaked at around ∼550 nm for SrSi 2 O 2 N 2 :Mn 2+ in the wavelength range of 450-600 nm. This highly eye-sensitive ∼550 nm-peaked band emission of SrSi 2 O 2 N 2 doped with Mn 2+ happens to overlap the 535 nm-peaked band emission of SrSi 2 O 2 N 2 doped with Eu 2+ , resulting in an intensified photoluminescence in a maximum by 355%. By combining this as-prepared Mn intensified SrSi 2 O 2 N 2 :Eu phosphor with blue InGaN chip, the quality of white-light was improved to 93.3% for color rendering index and 3584 K for correlated color temperature. - Research highlights: Photoluminescence enhancement and resultant color improvement of SrSi 2 O 2 N 2 : Eu can be adjusted via co-doping Mn with Eu. The band emission peaked at ∼550 for Mn2+ overlaps that at ∼535 nm for Eu 2+ . A white-light with 93.3% for CRI and 3584 K for CCT is achieved.

  14. Effect of Graphite Doped TiO_2 Nanoparticles on Smoke Degradation

    International Nuclear Information System (INIS)

    Roshasnorlyza Hazan; Mohamad Shahrizal Md Zain; Natrah Syafiqah Rosli

    2016-01-01

    Secondhand smoke affects in the same way as regular smoker. The best solution is to purify the air efficiently and effectively. In this study, we were successfully doped TiO_2 nanoparticle with graphite to accelerate the degradation of cigarette smoke. The graphite doped and undoped TiO_2 nanoparticles were prepared from synthetic rutile using alkaline fusion method and their photo catalytic activity were investigated under visible light irradiation. The photo catalytic activity of the TiO_2 nanoparticles was analyzed in terms of their particle size analysis, crystallization and optical band gap. TiO_2 nanoparticle act as photo catalyzer by utilization of light energy to excite electron-hole pairs in smoke degradation processes. With the aided from graphite in TiO_2 nanoparticles, the smoke degradation was accelerate up to 44.4 %. In this case, graphite helps to reduce optical band gap of TiO_2 nanoparticle, thus increasing excitation of electron from valence band to conduction band. (author)

  15. Effect of phosphorus doping on electronic structure and photocatalytic performance of g-C{sub 3}N{sub 4}: Insights from hybrid density functional calculation

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Jianjun, E-mail: jjliu@chnu.edu.cn [State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070 (China); School of Physics and Electronic Information, Huaibei Normal University, Huaibei, Anhui 235000 (China)

    2016-07-05

    Graphitic carbon nitride (g-C{sub 3}N{sub 4}), as a promising visible-light photocatalyst, has wide applications on water splitting, pollutants decomposition and CO{sub 2} reduction. Herein, we investigated the electronic and optical property of pure and P doped g-C{sub 3}N{sub 4} using Heyd-Scuseria-Ernzerhof (HSE06) hybrid functional method. The valuable features such as, the band structure, density of states, band decomposed charged density and optical absorption were computed to explore the role of phosphorus substitute N2 and C1 sites of g-C{sub 3}N{sub 4}.The results indicated that pure g-C{sub 3}N{sub 4} has an indirect band gap of about 2.73 eV, which is in good agreement with the experimental value. By doping P into N2 and C1 sites of g-C{sub 3}N{sub 4}, the band gap reduces to 2.03 and 2.22 eV, respectively. Optical absorption intensity of g-C{sub 3}N{sub 4} had a greatly enhancement in the visible region by doping P. Though narrowing the energy band of g-C{sub 3}N{sub 4} by doping P, conduction band and valance band edge of g-C{sub 3}N{sub 4} doping system still had enough potential to split water. Therefore, phosphorus doped g-C{sub 3}N{sub 4} is effective strategy to improve visible light response photocatalytic performance of g-C{sub 3}N{sub 4}. - Highlights: • For the first time, calculated band structure of P doped g-C{sub 3N}4 by Hybrid DFT method. • P doped g-C{sub 3N}4 narrowed band gap and enhanced optical absorption. • P doped g-C3{sub N4} enhanced the oxidation capacity of the valence band edge.

  16. Effect of Pd ion doping in the band gap of SnO{sub 2} nanoparticles: structural and optical studies

    Energy Technology Data Exchange (ETDEWEB)

    Nandan, Brajesh; Venugopal, B. [Pondicherry University, Centre for Nanoscience and Technology (India); Amirthapandian, S.; Panigrahi, B. K. [Indira Gandhi Centre for Atomic Research, Ion Beam and Computer Simulation Section, Materials Science Group (India); Thangadurai, P., E-mail: thangadurai.p@gmail.com [Pondicherry University, Centre for Nanoscience and Technology (India)

    2013-10-15

    Pd ion doping has influenced the band gap of SnO{sub 2} nanoparticles. Undoped and Pd ion-doped SnO{sub 2} nanoparticles were synthesized by chemical co-precipitation method. A tetragonal phase of SnO{sub 2} with a grain size range of 7-13 nm was obtained (studied by X-ray diffraction and transmission electron microscopy). A decreasing trend in the particle size with increasing doping concentration was observed. The presence of Pd in doped SnO{sub 2} was confirmed by chemical analysis carried out by energy-dispersive spectroscopy in the transmission electron microscope. Diffuse reflectance spectra showed a blue shift in absorption with increasing palladium concentration. Band gap of SnO{sub 2} nanoparticles was estimated from the diffuse reflectance spectra using Kubelka-Munk function and it was increasing with the increase of Pd ion concentration from 3.73 to 4.21 eV. The variation in band gap is attributed predominantly to the lattice strain and particle size. All the samples showed a broad photoluminescence emission centered at 375 nm when excited at 270 nm. A systematic study on the structural and optical properties of SnO{sub 2} nanoparticles is presented.

  17. White light emission from Tm3+/Dy3+ co-doped oxyfluoride germanate glasses under UV light excitation

    International Nuclear Information System (INIS)

    Lakshminarayana, G.; Yang Hucheng; Qiu Jianrong

    2009-01-01

    In this paper, we report on the absorption and photoluminescence properties of Tm 3+ /Dy 3+ ions co-doped oxyfluoride germanate glasses for white light emission. The X-ray diffraction (XRD) and differential thermal analysis (DTA) profiles of the host glass have been carried out to confirm its structure and thermal stability. From the measured absorption spectra, Judd-Ofelt (J-O) intensity parameters (Ω 2 , Ω 4 and Ω 6 ) have been evaluated for Tm 3+ and Dy 3+ ions. A combination of blue, yellow and red emissions has emerged in these glasses, which allows the observation of bright white light when the glasses are excited by the ultraviolet light. The white light luminescence colour could be changed by varying the excitation wavelength. Also, various colours of luminescence, including white light, can be easily tuned by adjusting the concentrations of Tm 3+ or Dy 3+ ions in the co-doped glasses. Concentration quenching effect was also investigated and possible energy transfer mechanism from Dy 3+ →Tm 3+ ions was explained which is also confirmed by the decay lifetime measurements. - Graphical Abstract: A combination of blue, yellow and red emissions has emerged from Tm 3+ /Dy 3+ co-doped glasses, which allows the observation of bright white light and makes them as excellent candidates applicable in the solid-state multi-colour three-dimensional display.

  18. Solvothermal synthesis of carbon coated N-doped TiO{sub 2} nanostructures with enhanced visible light catalytic activity

    Energy Technology Data Exchange (ETDEWEB)

    Yan Xuemin, E-mail: yanzhangmm2002@163.com [College of Chemistry and Environmental Engineering, Yangtze University, Jingzhou 434023 (China); Kang Jialing; Gao Lin; Xiong Lin; Mei Ping [College of Chemistry and Environmental Engineering, Yangtze University, Jingzhou 434023 (China)

    2013-01-15

    Highlights: Black-Right-Pointing-Pointer Chitosan was used as carbon and nitrogen resource to modify TiO{sub 2} nanostructure. Black-Right-Pointing-Pointer Nanocomposites with mesostructure were obtained by one-step solvothermal method. Black-Right-Pointing-Pointer Carbon species were modified on the surface of TiO{sub 2}. Black-Right-Pointing-Pointer Nitrogen was doped into the anatase titania lattice. Black-Right-Pointing-Pointer CTS-TiO{sub 2} nanocomposites show superior visible light photocatalytic activity. - Abstract: Visible light-active carbon coated N-doped TiO{sub 2} nanostructures(CTS-TiO{sub 2}) were prepared by a facile one-step solvothermal method with chitosan as carbon and nitrogen resource at 180 Degree-Sign C. The as-prepared samples were characterized by transmission electron microscopy (TEM), high-resolution transmission electron microscopy (HRTEM), X-ray diffraction (XRD), N{sub 2} adsorption-desorption analysis, X-ray photoelectron spectroscopy (XPS), and ultraviolet-visible (UV-vis) diffuse reflectance spectroscopy. The CTS-TiO{sub 2} nanocomposites possess anatase phase of nanocrystalline structure with average particle size of about 5-7 nm. A wormhole mesostructure can be observed in the CTS-TiO{sub 2} nanocomposites due to the constituent agglomerated of nanoparticles. It has been evidenced that the nitrogen was doped into the anatase titania lattice and the carbon species were modified on the surface of TiO{sub 2}. The photocatalytic activities of the as-prepared photocatalysts were measured by the degradation of methylene blue (MB) under visible light irradiation at {lambda} {>=} 400 nm. The results show that CTS-TiO{sub 2} nanostructures display a higher visible light photocatalytic activity than pure TiO{sub 2}, commercial P25 and C-coated TiO{sub 2} (C-TiO{sub 2}) photocatalysts. The higher photocatalytic activity could be attributed to the band-gap narrowed by N-doping and the accelerated separation of the photo-generated electrons

  19. Red, green, blue and white light upconversion emission in Yb3+/Tm3+/Ho3+ co-doped tellurite glasses

    International Nuclear Information System (INIS)

    Desirena, H; De la Rosa, E; Meza, O; Salas, P

    2011-01-01

    Several Yb 3+ /Tm 3+ /Ho 3+ co-doped transparent TeO 2 -ZnO-Na 2 O-Yb 2 O 3 -Ho 2 O 3 -Tm 2 O 3 glasses were prepared and luminescence properties were characterized. Simultaneous red, green and blue (RGB) emission were obtained after excitation at 970 nm. Colour emission was tuned from multicolour to white light with colour coordinate (0.32, 0.33) matching very well with the white reference (0.33, 0.33). Changes in colour emission were obtained by varying the intensity ratios between RGB bands that are strongly concentration dependent because of the interaction of co-dopants. The colour tunability, high quality of white light and high intensity of the emitted signal make these transparent glasses excellent candidates for applications in solid-state lighting.

  20. One-pot synthesis of K-doped g-C3N4 nanosheets with enhanced photocatalytic hydrogen production under visible-light irradiation

    Science.gov (United States)

    Wang, Yanyun; Zhao, Shuo; Zhang, Yiwei; Fang, Jiasheng; Zhou, Yuming; Yuan, Shenhao; Zhang, Chao; Chen, Wenxia

    2018-05-01

    Graphite carbon nitride (g-C3N4), as a promising low cost, visible light driven conjugated polymer semiconductor photocatalyst, has attracted wide attentions from researchers. However, low light absorption efficiency and inadequate charge separation limit the potential applications of g-C3N4. This paper exhibits K-doped g-C3N4 prepared by a facile thermal polymerization with KBr as the K source. The experiments of photocatalytic hydrogen evolution demonstrate that KBr content strongly affects the activity of the catalyst. XRD, FT-IR, XPS, SEM, TEM, UV-vis diffuse reflectance spectra, photoluminescence (PL) characterization methods are used to study the effects of potassium on the catalyst performance. The results find that K-modified g-C3N4 has a narrower band gap and enhanced light harvesting properties. Moreover, the photocatalytic hydrogen evolution rate (HER) of the optimized K-doped g-C3N4 nanosheets (10 wt % KBr) reaches 1337.2 μmol g-1h-1, which is about 5.6 times in comparison with that of pure g-C3N4 (239.8 μmol g-1h-1). The doping of the potassium may increase the π-conjugated systems and accelerate the electron transport rate, then improve the photocatalytic properties. Based on the results of the analysis, a possible mechanism is proposed.

  1. Evaluation of Ce3+ and alkali metal ions Co-doped LiSrAlF6 crystalline scintillators

    International Nuclear Information System (INIS)

    Wakahara, Shingo; Yanagida, Takayuki; Fujimoto, Yutaka; Yokota, Yuui; Pejchal, Jan; Kurosawa, Shunsuke; Suzuki, Shotaro; Kawaguchi, Noriaki; Fukuda, Kentaro; Yoshikawa, Akira

    2013-01-01

    High scintillation efficiency of Eu-doped LiSrAlF 6 (LiSAF) and LiCaAlF 6 (LiCAF) codoped with alkali metal ions has been reported in our recent studies. Thus in this paper, we demonstrated the scintillation properties of 1% Ce-doped LiSAF crystals with 1% alkali metal ions co-doping to increase the light yield and understand the scintillation mechanism. The crystals showed intense emission band corresponding to the 5d-4f transition of Ce 3+ , and their light yields under thermal neutron excitation were higher than that of the Ce only doped crystal. Especially, the light yield of Ce–Na co-doped crystal exceeded about two times that of Ce only doped one. -- Highlights: ► Ce-doped and alkali metal co-doped LiSAF crystals were grown by μ-PD method. ► Alkali metal co-doped crystals showed higher light yield than Ce only doped crystal. ► Decay time of alkali metal co-doped LiSAF were longer than that of Ce only doped one

  2. Visible light-driven photocatalytic degradation of the organic pollutant methylene blue with hybrid palladium–fluorine-doped titanium oxide nanoparticles

    International Nuclear Information System (INIS)

    Lázaro-Navas, Sonia; Prashar, Sanjiv; Fajardo, Mariano; Gómez-Ruiz, Santiago

    2015-01-01

    The synthesis of mesoporous aggregates of titanium oxide nanoparticles (F0) is described using a very cheap and simple synthetic protocol. This consists of the reaction of titanium tetraisopropoxide and a solution of HNO 3 in water (pH 2.0) and subsequent filtration. In addition, fluorine-doped titanium oxides (F1, F2, F5 and F10) were synthesized using the same method, adding increasing amounts of NaF to the reaction mixture (avoiding the use of expensive reagents such as NH 4 F or trifluoroacetic acid). The resulting materials were calcined at different temperatures (500, 600 and 650 °C) giving particles sized between 10 and 20 nm. Furthermore, a hybrid F-doped TiO 2 with supported palladium nanoparticles of ca. 20 nm (F5-500-Pd1) was synthesized by grafting an organometallic palladium(II) salt namely [Pd(cod)Cl 2 ] (cod = 1,5-cyclooctadiene). Photocatalytic studies of the degradation of methylene blue (MB) were carried out under UV light using all the synthesized material (non-doped an F-doped TiO 2 ), observing that the increase in the quantity of fluorine has a positive effect on the photocatalytic activity. F5-500 is apparently the material which has the most convenient structural properties (in terms of surface area and anatase/rutile ratio) and thus a higher photocatalytic activity. The hybrid material F-doped TiO 2 –Pd nanoparticles (F5-500-Pd1) has a lower band gap value than F5-500, and thus photocatalytic degradation of MB under LED visible light was achieved using F5-500-Pd1 as photocatalyst

  3. Enhancing the Performance of Quantum Dot Light-Emitting Diodes Using Room-Temperature-Processed Ga-Doped ZnO Nanoparticles as the Electron Transport Layer

    KAUST Repository

    Cao, Sheng

    2017-04-19

    Colloidal ZnO nanoparticle (NP) films are recognized as efficient electron transport layers (ETLs) for quantum dot light-emitting diodes (QD-LEDs) with good stability and high efficiency. However, because of the inherently high work function of such films, spontaneous charge transfer occurs at the QD/ZnO interface in such a QD-LED, thus leading to reduced performance. Here, to improve the QD-LED performance, we prepared Ga-doped ZnO NPs with low work functions and tailored band structures via a room-temperature (RT) solution process without the use of bulky organic ligands. We found that the charge transfer at the interface between the CdSe/ZnS QDs and the doped ZnO NPs was significantly weakened because of the incorporated Ga dopants. Remarkably, the as-assembled QD-LEDs, with Ga-doped ZnO NPs as the ETLs, exhibited superior luminances of up to 44 000 cd/m2 and efficiencies of up to 15 cd/A, placing them among the most efficient red-light QD-LEDs ever reported. This discovery provides a new strategy for fabricating high-performance QD-LEDs by using RT-processed Ga-doped ZnO NPs as the ETLs, which could be generalized to improve the efficiency of other optoelectronic devices.

  4. Correlation between electronic structure and energy band in Eu-doped CuInTe2 semiconductor compound with chalcopyrite structure

    Institute of Scientific and Technical Information of China (English)

    Tai Wang; Yong-Quan Guo; Shuai Li

    2017-01-01

    The Eu-doped Cu(In,Eu)Te2 semiconductors with chalcopyrite structures are promising materials for their applications in the absorption layer for thin-film solar cells due to their wider band-gaps and better optical properties than those of CulnTe2.In this paper,the Eu-doped CulnTe2 (Culn1-xEuxTe2,x =0,0.1,0.2,0.3) are studied systemically based on the empirical electron theory (EET).The studies cover crystal structures,bonding regularities,cohesive energies,energy levels,and valence electron structures.The theoretical values fit the experimental results very well.The physical mechanism of a broadened band-gap induced by Eu doping into CuInTe2 is the transitions between different hybridization energy levels induced by electron hopping between s and d orbitals and the transformations from the lattice electrons to valence electrons for Cu and In ions.The research results reveal that the photovoltaic effect induces the increase of lattice electrons of In and causes the electric resistivity to decrease.The Eu doping into CuInTe2 mainly influences the transition between different hybridization energy levels for Cu atoms,which shows that the 3d electron numbers of Cu atoms change before and after Eu doping.In single phase CuIn1-xEuxTe2,the number of valence electrons changes regularly with increasing Eu content,and the calculated band gap Eg also increases,which implies that the optical properties of Eu-doped CuIn1-xEuxTe2 are improved.

  5. Graphene-doped carbon/Fe3O4 porous nanofibers with hierarchical band construction as high-performance anodes for lithium-ion batteries

    International Nuclear Information System (INIS)

    He, Jianxin; Zhao, Shuyuan; Lian, Yanping; Zhou, Mengjuan; Wang, Lidan; Ding, Bin; Cui, Shizhong

    2017-01-01

    Highlights: • GN@C/Fe 3 O 4 are synthesized via in-situ electrospinning and thermal treatment. • GN@C/Fe 3 O 4 show unique dark/light banding with a hierarchical porous structure. • Doped graphene induces a uniform distribution of smaller size Fe 3 O 4 nanoparticles. • Doped graphene provides more active sites and accommodate the volume change. • GN@C/Fe 3 O 4 electrode displays a reversible capacity of 872 mAh/g after 100 cycles. - Abstract: Porous graphene-doped carbon/Fe 3 O 4 (GN@C/Fe 3 O 4 ) nanofibers are synthesized via in-situ electrospinning and subsequent thermal treatment for use as lithium-ion battery anode materials. A polyacrylonitrile (PAN)/polymethyl methacrylate (PMMA) solution containing ferric acetylacetone and graphene oxide nanosheets is used as the electrospinning precursor solution. The resulting porous GN@C/Fe 3 O 4 nanofibers show unique dark/light banding and a hierarchical porous structure. These nanofibers have a Brunauer–Emmett–Teller (BET) specific surface area of 323.0 m 2 /g with a total pore volume of 0.337 cm 3 /g, which is significantly greater than that of a sample without graphene and C/Fe 3 O 4 nanofibers. The GN@C/Fe 3 O 4 nanofiber electrode displays a reversible capacity of 872 mAh/g at a current density of 100 mA/g after 100 cycles, excellent cycling stability, and superior rate capability (455 mA/g at 5 A/g). The excellent performance of porous GN@C/Fe 3 O 4 is attributed to the material’s unique structure, including its striped topography, hierarchical porous structure, and inlaid flexible graphene, which not only provides more accessible active sites for lithium-ion insertion and high-efficiency transport pathways for ions and electrons, but also accommodates the volume change associated with lithium insertion/extraction. Moreover, the zero-valent iron and graphene in the porous nanofibers enhance the conductivity of the electrodes.

  6. Improved performance of quantum dot light emitting diode by modulating electron injection with yttrium-doped ZnO nanoparticles

    Science.gov (United States)

    Li, Jingling; Guo, Qiling; Jin, Hu; Wang, Kelai; Xu, Dehua; Xu, Yongjun; Xu, Gang; Xu, Xueqing

    2017-10-01

    In a typical light emitting diode (QD-LED), with ZnO nanoparticles (NPs) serving as the electron transport layer (ETL) material, excessive electron injection driven by the matching conduction band maximum (CBM) between the QD and this oxide layer usually causes charge imbalance and degrades the device performance. To address this issue, the electronic structure of ZnO NPs is modified by the yttrium (Y) doping method. We demonstrate that the CBM of ZnO NPs has a strong dependence on the Y-doping concentration, which can be tuned from 3.55 to 2.77 eV as the Y doping content increases from 0% to 9.6%. This CBM variation generates an enlarged barrier between the cathode and this ZnO ETL benefits from the modulation of electron injection. By optimizing electron injection with the use of a low Y-doped (2%) ZnO to achieve charge balance in the QD-LED, device performance is significantly improved with maximum luminance, peak current efficiency, and maximal external quantum efficiency increase from 4918 cd/m2, 11.3 cd/A, and 4.5% to 11,171 cd/m2, 18.3 cd/A, and 7.3%, respectively. This facile strategy based on the ETL modification enriches the methodology of promoting QD-LED performance.

  7. Band gap opening of bilayer graphene by F4-TCNQ molecular doping and externally applied electric field.

    Science.gov (United States)

    Tian, Xiaoqing; Xu, Jianbin; Wang, Xiaomu

    2010-09-09

    The band gap opening of bilayer graphene with one side surface adsorption of F4-TCNQ is reported. F4-TCNQ doped bilayer graphene shows p-type semiconductor characteristics. With a F4-TCNQ concentration of 1.3 x 10(-10) mol/cm(2), the charge transfer between each F4-TCNQ molecule and graphene is 0.45e, and the built-in electric field, E(bi), between the graphene layers could reach 0.070 V/A. The charge transfer and band gap opening of the F4-TCNQ-doped graphene can be further modulated by an externally applied electric field (E(ext)). At 0.077 V/A, the gap opening at the Dirac point (K), DeltaE(K) = 306 meV, and the band gap, E(g) = 253 meV, are around 71% and 49% larger than those of the pristine bilayer under the same E(ext).

  8. Influence of doping location and width of dimethylquinacridone on the performance of organic light emitting devices

    International Nuclear Information System (INIS)

    Li Jingze; Yahiro, Masayuki; Ishida, Kenji; Matsushige, Kazumi

    2005-01-01

    The influence of doping location and width of fluorescent dimethylquinacridone (DMQA) molecules on the performance of organic light emitting devices has been systematically investigated. While the doped zone is located at the interface of the hole transport layer (HTL) and the light emitting layer (EML), doping in the HTL leads to significant improvement of the external quantum efficiency relative to the undoped device, whereas the efficiency is lower than that of doping in the EML. This phenomenon is explained according to the electroluminescence (EL) process of the doped DMQA, which is dominated by Foerster energy transfer. Additionally, a device with dual doping in both HTL and EML exhibits the highest efficiency. The EL and photoluminescence spectra are also dependent on the doping sites

  9. The structural, electrical and optical properties of Mg-doped ZnO with different interstitial Mg concentration

    Energy Technology Data Exchange (ETDEWEB)

    Hu, Yonghong, E-mail: hchyh@njust.edu.cn [School of Nuclear Technology and Chemistry & Biology, Hubei University of Science and Technology, Xianning 437100 (China); Institute of Optoelectronics & Nanomaterials, College of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094 (China); Zeng, Haibo [Institute of Optoelectronics & Nanomaterials, College of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094 (China); Du, Jifu [School of Nuclear Technology and Chemistry & Biology, Hubei University of Science and Technology, Xianning 437100 (China); Hu, Ziyu [Beijing Computational Science Research Center, Beijing 100084 (China); Zhang, Shengli [Institute of Optoelectronics & Nanomaterials, College of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094 (China)

    2016-10-01

    Through first principle calculations, we studied the structural, electronic and optical properties of ZnO doped by interstitial Mg. With the increase of Mg content (x), the derivations of lattice parameters from the wurtzite ZnO become more and more significant. The Mg-doped ZnO with x below 15.79% is found to be n-type semiconductor. The minimum of energy band gap and light transmittance in high energy region (7.5–25 eV) decrease while the conductivity and refractive index increase with increasing x. Further increasing x up to 20%, the Mg-doped ZnO is found to be direct-band-gap semiconductor with great structural derivation from wurtzite phase. The light transmittance increases while the refractive index decreases with the increase of x due to the change of geometry and electronic structure. So, it’s concluded that the electronic and optical properties of ZnO doped by interstitial Mg may be greatly influenced by Mg content. - Graphical abstract: The minimum of energy gap decreases while the corresponding relative number of electrons into the conduction bands increases when the interstitial Mg content x in Mg-doped ZnO increases (0 ≤ x ≤ 15.79%). - Highlights: • The energy band gap decreases with the increase of interstitial Mg content from 5.88% to 15.79%. • The conductivity increases with the increase of interstitial Mg content from 5.88% to 15.79%. • The Mg{sub x}Zn{sub 1-x}O (interstitial Mg content x= 20%) is found to be a direct-band-gap semiconductor. • The light transmittance decreases with the increase of interstitial Mg content from 5.88% to 15.79%. • The refractive index increases with the increase of interstitial Mg content from 5.88% to 15.79%.

  10. Photocatalytic Hydrogen or Oxygen Evolution from Water over S- or N-Doped TiO2 under Visible Light

    Directory of Open Access Journals (Sweden)

    Kazumoto Nishijima

    2008-01-01

    Full Text Available S- or N-doping of TiO2 powder having an anatase or rutile phase extended the photocatalytic activity for water oxidation and reduction under UV light and visible light irradiation. For the reduction of water, anatase-doped TiO2 showed higher level of activity than that of doped TiO2 having a rutile phase using ethanol as an electron donor. Furthermore, the activity level of S-doped TiO2 for hydrogen evolution was higher than that of N-doped TiO2 photocatalysts under visible light. Photocatalytic oxidation of water on doped TiO2 having a rutile phase proceeded with fairly high efficiency when Fe3+ ions were used as electron acceptors compared to that on doped TiO2 having an anatase phase. In addition, water splitting under visible light irradiation was achieved by construction of a Z-scheme photocatalysis system employing the doped TiO2 having anatase and rutile phases for H2 and O2 evolution and the I−/IO3− redox couple as an electron relay.

  11. Rose-like I-doped Bi{sub 2}O{sub 2}CO{sub 3} microspheres with enhanced visible light response: DFT calculation, synthesis and photocatalytic performance

    Energy Technology Data Exchange (ETDEWEB)

    Zai, Jiantao; Cao, Fenglei; Liang, Na; Yu, Ke; Tian, Yuan; Sun, Huai; Qian, Xuefeng, E-mail: xfqian@sjtu.edu.cn

    2017-01-05

    Highlights: • DFT reveals I{sup −} can partially substitute CO{sub 3}{sup 2−}to narrow the bandgap of Bi{sub 2}O{sub 2}CO{sub 3}. • Sodium citrate play a key role on the formation of rose-like I-doped Bi{sub 2}O{sub 2}CO{sub 3}. • Rose-like I-doped Bi{sub 2}O{sub 2}CO{sub 3} show enhanced visible light response. • The catalyst has enhanced photocatalytic activity to organic and Cr(VI) pollutes. - Abstract: Based on the crystal structure and the DFT calculation of Bi{sub 2}O{sub 2}CO{sub 3}, I{sup −} can partly replace the CO{sub 3}{sup 2−}in Bi{sub 2}O{sub 2}CO{sub 3} to narrow its bandgap and to enhance its visible light absorption. With this in mind, rose-like I-doped Bi{sub 2}O{sub 2}CO{sub 3} microspheres were prepared via a hydrothermal process. This method can also be extended to synthesize rose-like Cl- or Br-doped Bi{sub 2}O{sub 2}CO{sub 3} microspheres. Photoelectrochemical test supports the DFT calculation result that I- doping narrows the bandgap of Bi{sub 2}O{sub 2}CO{sub 3} by forming two intermediate levels in its forbidden band. Further study reveals that I-doped Bi{sub 2}O{sub 2}CO{sub 3} microspheres with optimized composition exhibit the best photocatalytic activity. Rhodamine B can be completely degraded within 6 min and about 90% of Cr(VI) can be reduced after 25 min under the irradiation of visible light (λ > 400 nm).

  12. The trap states in lightly Mg-doped GaN grown by MOVPE on a freestanding GaN substrate

    Science.gov (United States)

    Narita, Tetsuo; Tokuda, Yutaka; Kogiso, Tatsuya; Tomita, Kazuyoshi; Kachi, Tetsu

    2018-04-01

    We investigated traps in lightly Mg-doped (2 × 1017 cm-3) p-GaN fabricated by metalorganic vapor phase epitaxy (MOVPE) on a freestanding GaN substrate and the subsequent post-growth annealing, using deep level transient spectroscopy. We identified four hole traps with energy levels of EV + 0.46, 0.88, 1.0, and 1.3 eV and one electron trap at EC - 0.57 eV in a p-type GaN layer uniformly doped with magnesium (Mg). The Arrhenius plot of hole traps with the highest concentration (˜3 × 1016 cm-3) located at EV + 0.88 eV corresponded to those of hole traps ascribed to carbon on nitrogen sites in n-type GaN samples grown by MOVPE. In fact, the range of the hole trap concentrations at EV + 0.88 eV was close to the carbon concentration detected by secondary ion mass spectroscopy. Moreover, the electron trap at EC - 0.57 eV was also identical to the dominant electron traps commonly observed in n-type GaN. Together, these results suggest that the trap states in the lightly Mg-doped GaN grown by MOVPE show a strong similarity to those in n-type GaN, which can be explained by the Fermi level close to the conduction band minimum in pristine MOVPE grown samples due to existing residual donors and Mg-hydrogen complexes.

  13. Raman scattering and band-gap variations of Al-doped ZnO nanoparticles synthesized by a chemical colloid process

    International Nuclear Information System (INIS)

    Lo, Shih-Shou; Huang, Dison; Tu, Chun Hsiang; Hou, Chia-Hung; Chen, Chii-Chang

    2009-01-01

    This study synthesizes Al-doped ZnO (AZO) nanoparticles using a chemical colloid process. Raman scattering analysis shows that Al doping increases the lattice defects and induces Raman vibration modes of 651 cm -1 . The Raman shift of the active mode E 2 (high) of AZO nanoparticles shows the presence and increase in the stress in nanoparticles when the Al dopant concentration increases. Room-temperature photoluminescence (RT-PL) spectra of synthesized AZO nanoparticles exhibit strong UV emissions near the band edges. The RT-PL peak shifts to a higher photon energy region as the Al concentration increases, indicating a broadening of the band gap.

  14. Photocatalytic degradation of p,p'-DDT under UV and visible light using interstitial N-doped TiO₂.

    Science.gov (United States)

    Ananpattarachai, Jirapat; Kajitvichyanukul, Puangrat

    2015-01-01

    1,1,1-trichloro-2,2-bis(p-chlorophenyl)ethane (or p,p'-DDT) is one of the most persistent pesticides. It is resistant to breakdown in nature and cause the water contamination problem. In this work, a major objective was to demonstrate the application of N-doped TiO2 in degradation and mineralization of the p,p'-DDT under UV and visible light in aqueous solution. The N-doped TiO2 nanopowders were prepared by a simple modified sol-gel procedure using diethanolamine (DEA) as a nitrogen source. The catalyst characteristics were investigated using XRD, SEM, TEM, and XPS. The adsorption and photocatalytic oxidation of p,p'-DDT using the synthesized N-doped TiO2 under UV and visible light were conducted in a batch photocatalytic experiment. The kinetics and p,p'-DDT degradation performance of the N-doped TiO2 were evaluated. Results show that the N-doped TiO2 can degrade p,p'-DDT effectively under both UV and visible lights. The rate constant of the p,p'-DDT degradation under UV light was only 0.0121 min(-1), whereas the rate constant of the p,p'-DDT degradation under visible light was 0.1282 min(-1). Under visible light, the 100% degradation of p,p'-DDT were obtained from N-doped TiO2 catalyst. The reaction rate of p,p'-DDT degradation using N-doped TiO2 under visible light was sixfold higher than that under UV light. According to Langmuir-Hinshelwood model, the adsorption equilibrium constant (K) for the N-doped TiO2 under visible light was 0.03078 L mg(-1), and the apparent reaction rate constant (k) was 1.3941 mg L(-1)-min. Major intermediates detected during the p,p'-DDT degradation were p,p'-DDE, o,p'-DDE, p,p'-DDD and p,p'-DDD. Results from this work can be applied further for the breakdown of p,p'-DDT molecule in the real contaminated water using this technology.

  15. Visible light-driven photocatalytic degradation of the organic pollutant methylene blue with hybrid palladium–fluorine-doped titanium oxide nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    Lázaro-Navas, Sonia; Prashar, Sanjiv; Fajardo, Mariano; Gómez-Ruiz, Santiago, E-mail: santiago.gomez@urjc.es [Universidad Rey Juan Carlos, Departamento de Biología y Geología, Física y Química Inorgánica, ESCET (Spain)

    2015-02-15

    The synthesis of mesoporous aggregates of titanium oxide nanoparticles (F0) is described using a very cheap and simple synthetic protocol. This consists of the reaction of titanium tetraisopropoxide and a solution of HNO{sub 3} in water (pH 2.0) and subsequent filtration. In addition, fluorine-doped titanium oxides (F1, F2, F5 and F10) were synthesized using the same method, adding increasing amounts of NaF to the reaction mixture (avoiding the use of expensive reagents such as NH{sub 4}F or trifluoroacetic acid). The resulting materials were calcined at different temperatures (500, 600 and 650 °C) giving particles sized between 10 and 20 nm. Furthermore, a hybrid F-doped TiO{sub 2} with supported palladium nanoparticles of ca. 20 nm (F5-500-Pd1) was synthesized by grafting an organometallic palladium(II) salt namely [Pd(cod)Cl{sub 2}] (cod = 1,5-cyclooctadiene). Photocatalytic studies of the degradation of methylene blue (MB) were carried out under UV light using all the synthesized material (non-doped an F-doped TiO{sub 2}), observing that the increase in the quantity of fluorine has a positive effect on the photocatalytic activity. F5-500 is apparently the material which has the most convenient structural properties (in terms of surface area and anatase/rutile ratio) and thus a higher photocatalytic activity. The hybrid material F-doped TiO{sub 2}–Pd nanoparticles (F5-500-Pd1) has a lower band gap value than F5-500, and thus photocatalytic degradation of MB under LED visible light was achieved using F5-500-Pd1 as photocatalyst.

  16. Effect of nitrogen doping on the microstructure and visible light photocatalysis of titanate nanotubes by a facile cohydrothermal synthesis via urea treatment

    International Nuclear Information System (INIS)

    Hu, Cheng-Ching; Hsu, Tzu-Chien; Lu, Shan-Yu

    2013-01-01

    A facile one-step cohydrothermal synthesis via urea treatment has been adopted to prepare a series of nitrogen-doped titanate nanotubes with highly efficient visible light photocatalysis of rhodamine B, in an effect to identify the effect of nitrogen doping on the photodegradation efficiency. The morphology and microstructure of the thus-prepared N-doped titanates were characterized by nitrogen adsorption/desorption isotherms, transmission electron microscopy, and scanning electron microscopy. With increasing urea loadings, the N-doped titanates change from a porous multi-layer and nanotube-shaped to a dense and aggregated particle-shaped structure, accompanied with reduced specific surface area and pore volume and enhanced pore diameter. Interstitial linkage to titanate via Ti-O-N and Ti-N-O is confirmed by X-ray photoelectron spectroscopy. Factors governing the photocatalytic degradation such as the specific surface area of the catalyst and the degradation pathway are analyzed, a mechanistic illustration on the photodegradation is provided, and a 3-stage degradation mechanism is identified. The synergistic contribution due to the enhanced deethylation and chromophore cleavage on rhodamine B molecules and the reduced band gap on the catalyst TiO 2 by interstitial nitrogen-doping has been accounted for the high photodegradation efficiency of the N-doped titanate nanotubes.

  17. Microwave-assisted aqueous synthesis of transition metal ions doped ZnSe/ZnS core/shell quantum dots with tunable white-light emission

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Jie [Laboratory of Advanced Materials, Fudan University, Shanghai 200438 (China); Chen, Qiuhang; Zhang, Wanlu; Mei, Shiliang; He, Liangjie; Zhu, Jiatao [Engineering Research Center of Advanced Lighting Technology, Ministry of Education, Institute for Electric Light Sources, Fudan University, Shanghai 200433 (China); Chen, Guoping [School of Information Science and Technology, Fudan University, Shanghai 200433 (China); Guo, Ruiqian, E-mail: rqguo@fudan.edu.cn [Engineering Research Center of Advanced Lighting Technology, Ministry of Education, Institute for Electric Light Sources, Fudan University, Shanghai 200433 (China)

    2015-10-01

    Highlights: • ZnSe-based QDs were formed via a microwave-assisted aqueous approach. • The stabilizer, ZnS coats and UV irradiation played a role in the PL enhancement. • Tunable white-light-emitting Mn:ZnSe QDs and Cu,Mn:ZnSe/ZnS QDs were synthesized. • The formation mechanism of Cu,Mn:ZnSe QDs was clarified. • The corresponding CIE color coordinates of different PL spectra were obtained. - Abstract: Synthesis of bright white-light emitting Mn and Cu co-doped ZnSe/ZnS core/shell quantum dots (QDs) (Cu,Mn:ZnSe/ZnS) was reported. Water-soluble ZnSe-based QDs with Mn and Cu doping were prepared using a versatile hot-injection method in aqueous solution with a microwave-assisted approach. Influence of the Se/S ratio, stabilizer, refluxing time and the concentration of Cu/Mn dopant ions on the particle size and photoluminescence (PL) were investigated. The as-prepared QDs in the different stages of growth were characterized by X-ray powder diffractometer (XRD), high-resolution transmission electron microscopy (HRTEM), UV–visible (UV–vis) spectrophotometer, and fluorescence spectrophotometer. It is found that these ZnSe-based QDs synthesized under mild conditions exhibit emission in the range of 390–585 nm. The PL quantum yield (QY) of the as-prepared water-soluble ZnSe QDs can be up to 24.3% after the UV-irradiation treatment. The band-gap emission of ZnSe is effectively restrained through Mn and Cu doping. The refluxing time influences the doping of not only Mn, but also Cu, which leads to the best refluxing time of Mn:ZnSe and the red-shift of the emission of Cu:ZnSe d-dots. Co-doping induced white-light emission (WLE) from Cu,Mn:ZnSe/ZnS core/shell QDs were obtained, which can offer the opportunity for future-generation white-light emitting diodes (LEDs)

  18. Isoelectronic Ln doping in p-GaN and its effects on InGaN light-emitting diodes

    International Nuclear Information System (INIS)

    Kim, C. S.; Cheong, H. S.; Kang, D. S.; Kim, J. Y.; Hong, C. H.; Suh, E. K.; Lee, H. J.; Cho, H. K.; Adesida, I.

    2004-01-01

    The effects of isoelectronic In doping in a Mg-doped p-GaN layer on device performance of InGaN light-emitting diodes (LED) were investigated. It was found that there was a decrease of Hall resistivity and contact resistivity in p-GaN with In doping, compared to typical Mg-doped p-GaN. Isoelectronic In doping in p-GaN seems to cause a kind of surfactant effect and/or purification effect similar to the In-doped GaN case, which exhibits a decrease of non-radiative recombination centers and an enhancement of carrier concentration. Light output power and operating voltage were improved by applying an In-doped p-GaN contact layer to the LED.

  19. Electroluminescent Cu-doped CdS quantum dots

    NARCIS (Netherlands)

    Stouwdam, J.W.; Janssen, R.A.J.

    2009-01-01

    Incorporating Cu-doped CdS quantum dots into a polymer host produces efficient light-emitting diodes. The Cu dopant creates a trap level that aligns with the valence band of the host, enabling the direct injection of holes into the quantum dots, which act as emitters. At low current densities, the

  20. Tm3+/Yb3+ co-doped tellurite glass with silver nanoparticles for 1.85 μm band laser material

    Science.gov (United States)

    Huang, Bo; Zhou, Yaxun; Cheng, Pan; Zhou, Zizhong; Li, Jun; Jin, Wei

    2016-10-01

    Tm3+/Yb3+ co-doped tellurite glasses with different silver nanoparticles (Ag NPs) concentrations were prepared using the conventional melt-quenching technique and characterized by the UV/Vis/NIR absorption spectra, 1.85 μm band fluorescence emission spectra, transmission electron microscopy (TEM) images, differential scanning calorimeter (DSC) curves and X-ray diffraction (XRD) patterns to investigate the effects of Ag NPs on the 1.85 μm band spectroscopic properties of Tm3+ ions, thermal stability and structural nature of glass hosts. Under the excitation of 980 nm laser diode (LD), the 1.85 μm band fluorescence emission of Tm3+ ions enhances significantly in the presence of Ag NPs with average diameter of ∼8 nm and local surface Plasmon resonance (LSPR) band of ∼590 nm, which is mainly attributed to the increased local electric field induced by Ag NPs at the proximity of doped rare-earth ions on the basis of energy transfer from Yb3+ to Tm3+ ions. An improvement by about 110% of fluorescence intensity is observed in the Tm3+/Yb3+ co-doped tellurite glass containing 0.5 mol% amount of AgNO3 while the prepared glass samples possess good thermal stability and amorphous structural nature. Meanwhile, the Judd-Ofelt intensity parameters Ωt (t = 2,4,6), spontaneous radiative transition probabilities, fluorescence branching ratios and radiative lifetimes of relevant excited levels of Tm3+ ions were determined based on the Judd-Ofelt theory to reveal the enhanced effects of Ag NPs on the 1.85 μm band spectroscopic properties, and the energy transfer micro-parameters and phonon contribution ratios were calculated based on the non-resonant energy transfer theory to elucidate the energy transfer mechanism between Yb3+ and Tm3+ ions. The present results indicate that the prepared Tm3+/Yb3+ co-doped tellurite glass with an appropriate amount of Ag NPs is a promising lasing media applied for 1.85 μm band solid-state lasers and amplifiers.

  1. Strategies of making TiO2 and ZnO visible light active

    International Nuclear Information System (INIS)

    Rehman, Shama; Ullah, Ruh; Butt, A.M.; Gohar, N.D.

    2009-01-01

    In modern purification techniques employing semiconductor mediated photooxidation of toxic substances, zinc oxide (ZnO) and titanium dioxide (TiO 2 ) are the most widely used metal oxides due to their unique blend of properties. However, the band edges of these semiconductors lie in the UV region which makes them inactive under visible light irradiation. Researchers have been interested in the modification of electronic and optical properties of these metal oxides for their efficient use in water and air purification under visible light irradiation. Visible light activity has been induced in TiO 2 and ZnO by surface modification via organic materials/semiconductor coupling and band gap modification by doping with metals and nonmetals, co-doping with nonmetals, creation of oxygen vacancies and oxygen sub-stoichiometry. This paper encompasses the progress and developments made so far through these techniques in the visible light photocatalysis with TiO 2 and ZnO. Recently, nitrogen doping in titania has been extensively carried out and therefore somewhat detailed discussion in this respect has been presented. Visible light activation of titania clusters encapsulated in zeolite-Y by nitrogen doping and incorporation of dye or organic sensitizers inside the zeolite framework, has also been highlighted in this review.

  2. Visible-Light-Responsive Photocatalysis: Ag-Doped TiO2 Catalyst Development and Reactor Design Testing

    Science.gov (United States)

    Coutts, Janelle L.; Hintze, Paul E.; Meier, Anne; Shah, Malay G.; Devor, Robert W.; Surma, Jan M.; Maloney, Phillip R.; Bauer, Brint M.; Mazyck, David W.

    2016-01-01

    In recent years, the alteration of titanium dioxide to become visible-light-responsive (VLR) has been a major focus in the field of photocatalysis. Currently, bare titanium dioxide requires ultraviolet light for activation due to its band gap energy of 3.2 eV. Hg-vapor fluorescent light sources are used in photocatalytic oxidation (PCO) reactors to provide adequate levels of ultraviolet light for catalyst activation; these mercury-containing lamps, however, hinder the use of this PCO technology in a spaceflight environment due to concerns over crew Hg exposure. VLR-TiO2 would allow for use of ambient visible solar radiation or highly efficient visible wavelength LEDs, both of which would make PCO approaches more efficient, flexible, economical, and safe. Over the past three years, Kennedy Space Center has developed a VLR Ag-doped TiO2 catalyst with a band gap of 2.72 eV and promising photocatalytic activity. Catalyst immobilization techniques, including incorporation of the catalyst into a sorbent material, were examined. Extensive modeling of a reactor test bed mimicking air duct work with throughput similar to that seen on the International Space Station was completed to determine optimal reactor design. A bench-scale reactor with the novel catalyst and high-efficiency blue LEDs was challenged with several common volatile organic compounds (VOCs) found in ISS cabin air to evaluate the system's ability to perform high-throughput trace contaminant removal. The ultimate goal for this testing was to determine if the unit would be useful in pre-heat exchanger operations to lessen condensed VOCs in recovered water thus lowering the burden of VOC removal for water purification systems.

  3. Emission tunability and local environment in europium-doped OH{sup −}-free calcium aluminosilicate glasses for artificial lighting applications

    Energy Technology Data Exchange (ETDEWEB)

    Farias, Aline M.; Sandrini, Marcelo; Viana, José Renato M.; Baesso, Mauro L.; Bento, Antônio C.; Rohling, Jurandir H. [Departamento de Física, Universidade Estadual de Maringá, Av Colombo, 5790, 87020-900, Maringá, PR (Brazil); Guyot, Yannick [Laboratoire de Physico–Chimie des Matériaux Luminescents, Université de Lyon, Université Claude Bernard Lyon 1, Villeurbanne, UMR 5620 CNRS 69622 (France); De Ligny, Dominique [Department of Materials Science and Engineering, University of Erlangen Nürnberg, Martens str. 5, 91058, Erlangen (Germany); Nunes, Luiz Antônio O. [Instituto de Física de São Carlos, Universidade de São Paulo, Av. Trabalhador São-Carlense400, 13566-590, São Carlos, SP (Brazil); Gandra, Flávio G. [Instituto de Física Gleb Wataghin, Universidade Estadual de Campinas, 13083-859, Campinas, SP (Brazil); Sampaio, Juraci A. [Lab Ciências Físicas, Universidade Estadual Norte Fluminense, 28013-602, Campos Dos Goytacazes, RJ (Brazil); Lima, Sandro M.; Andrade, Luis Humberto C. [Grupo de Espectroscopia Óptica e Fototérmica, Universidade Estadual de Mato Grosso do Sul-UEMS, Dourados, MS, C. P. 351, CEP 79804-970 (Brazil); and others

    2015-04-15

    The relationship between emission tunability and the local environment of europium ions in OH{sup −}-free calcium aluminosilicate glasses was investigated, focusing on the development of devices for artificial lighting. Significant conversion of Eu{sup 3+} to Eu{sup 2+} was obtained by means of melting the glasses under a vacuum atmosphere and controlling the silica content, resulting in broad, intense, and tunable luminescence ranging from blue to red. Electron spin resonance and X-ray absorption near edge structure measurements enabled correlation of the luminescence behavior of the material with the Eu{sup 2+}/Eu{sup 3+} concentration ratio and changes in the surrounding ions' crystal field. The coordinates of the CIE 1931 chromaticity diagram were calculated from the spectra, and the contour maps showed that the light emitted from Eu{sup 2+} presented broad bands and enhanced color tuning, ranging from reddish-orange to blue. The results showed that these Eu doped glasses can be used for tunable white lighting by combining matrix composition and the adjustment of the pumping wavelength. - Highlights: • Eu{sup 2+}-doped OH{sup −} free calcium aluminosilicate glass as a new source for white lighting. • Correlation between emission tunability and local environment of europium ions. • Significant reduction of Eu{sup 3+} to Eu{sup 2+} by melting the glasses under vacuum atmosphere. • Broad, intense and tunable luminescence ranging from blue to red.

  4. Improved visible-light photocatalytic activity of TiO2 co-doped with copper and iodine

    Science.gov (United States)

    Dorraj, Masoumeh; Goh, Boon Tong; Sairi, Nor Asrina; Woi, Pei Meng; Basirun, Wan Jefrey

    2018-05-01

    Cu-I-co-doped TiO2 photocatalysts active to visible light absorption were prepared by hydrothermal method and calcined at various temperatures (350 °C, 450 °C, and 550 °C). The co-doped powders at 350 °C displayed the highest experimental Brunauer-Emmett-Teller surface area and lowest photoluminescence intensity, which demonstrated that a decrease in electron-hole recombination process. The synthesis of co-doped TiO2 was performed at this optimized temperature. In the co-doped sample, the Cu2+ doped TiO2 lattice created a major "red-shift" in the absorption edge due to the presence of the 3d Cu states, whereas the amount of red-shift from the I5+ doping in the TiO2 lattice was minor. Interestingly, the presence of Cu2+ species also boosted the reduction of I5+ ions to the lower multi-valance state I- in the TiO2 lattice by trapping the photogenerated electrons, which resulted in effective separation of the photogenerated charges. The Cu-I-co-doped TiO2 was able to degrade methyl orange dye under visible-light irradiation with improved photocatalytic activity compared with the single metal-doped TiO2 and pure TiO2 because of the strong visible light absorption and effective separation of photogenerated charges caused by the synergistic effects of Cu and I co-dopants.

  5. Effect of Stepwise Doping on Lifetime and Efficiency of Blue and White Phosphorescent Organic Light Emitting Diodes.

    Science.gov (United States)

    Lee, Song Eun; Lee, Ho Won; Lee, Seok Jae; Koo, Ja-ryong; Lee, Dong Hyung; Yang, Hyung Jin; Kim, Hye Jeong; Yoon, Seung Soo; Kim, Young Kwan

    2015-02-01

    We investigated a light emission mechanism of blue phosphorescent organic light emitting diodes (PHOLEDs), using a stepwise doping profile of 2, 8, and 14 wt.% within the emitting layer (EML). We fabricated several blue PHOLEDs with phosphorescent blue emitter iridium(III) bis[(4,6-difluorophenyl)-pyridinato-N,C2]picolinate doped in N,N'-dicarbazolyl-3,5-benzene as a p-type host material. A blue PHOLED with the highest doping concentration as part of the EML close to an electron transporting layer showed a maximum luminous efficiency of 20.74 cd/A, and a maximum external quantum efficiency of 10.52%. This can be explained by effective electron injection through a highly doped EML side. Additionally, a white OLED based on the doping profile was fabricated with two thin red EMLs within a blue EML maintaining a thickness of 30 nm for the entire EML. Keywords: Blue Phosphorescent Organic Light Emitting Diodes, Stepwise Doping Structure, Charge Trapping Effect.

  6. Enhanced Visible Light Photocatalytic Activity of V2O5 Cluster Modified N-Doped TiO2 for Degradation of Toluene in Air

    Directory of Open Access Journals (Sweden)

    Fan Dong

    2012-01-01

    Full Text Available V2O5 cluster-modified N-doped TiO2 (N-TiO2/V2O5 nanocomposites photocatalyst was prepared by a facile impregnation-calcination method. The effects of V2O5 cluster loading content on visible light photocatalytic activity of the as-prepared samples were investigated for degradation of toluene in air. The results showed that the visible light activity of N-doped TiO2 was significantly enhanced by loading V2O5 clusters. The optimal V2O5 loading content was found to be 0.5 wt.%, reaching a removal ratio of 52.4% and a rate constant of 0.027 min−1, far exceeding that of unmodified N-doped TiO2. The enhanced activity is due to the deposition of V2O5 clusters on the surface of N-doped TiO2. The conduction band (CB potential of V2O5 (0.48 eV is lower than the CB level of N-doped TiO2 (−0.19 V, which favors the photogenerated electron transfer from CB of N-doped TiO2 to V2O5 clusters. This function of V2O5 clusters helps promote the transfer and separation of photogenerated electrons and holes. The present work not only displays a feasible route for the utilization of low cost V2O5 clusters as a substitute for noble metals in enhancing the photocatalysis but also demonstrates a facile method for preparation of highly active composite photocatalyst for large-scale applications.

  7. The Electric and Optical Properties of Doped Small Molecular Organic Light-Emitting Devices

    International Nuclear Information System (INIS)

    Kwang-Ohk Cheon

    2003-01-01

    Organic light-emitting devices (OLEDs) constitute a new and exciting emissive display technology. In general, the basic OLED structure consists of a stack of fluorescent organic layers sandwiched between a transparent conducting-anode and metallic cathode. When an appropriate bias is applied to the device, holes are injected from the anode and electrons from the cathode; some of the recombination events between the holes and electrons result in electroluminescence (EL). Until now, most of the efforts in developing OLEDs have focused on display applications, hence on devices within the visible range. However some organic devices have been developed for ultraviolet or infrared emission. Various aspects of the device physics of doped small molecular OLEDs were described and discussed. The doping layer thickness and concentration were varied systematically to study their effects on device performances, energy transfer, and turn-off dynamics. Low-energy-gap DCM2 guest molecules, in either α-NPD or DPVBi host layers, are optically efficient fluorophores but also generate deep carrier trap-sites. Since their traps reduce the carrier mobility, the current density decreases with increased doping concentration. At the same time, due to efficient energy transfer, the quantum efficiency of the devices is improved by light doping or thin doping thickness, in comparison with the undoped neat devices. However, heavy doping induces concentration quenching effects. Thus, the doping concentration and doping thickness may be optimized for best performance

  8. The Electric and Optical Properties of Doped Small Molecular Organic Light-Emitting Devices

    Energy Technology Data Exchange (ETDEWEB)

    Cheon, Kwang-Ohk [Iowa State Univ., Ames, IA (United States)

    2003-01-01

    Organic light-emitting devices (OLEDs) constitute a new and exciting emissive display technology. In general, the basic OLED structure consists of a stack of fluorescent organic layers sandwiched between a transparent conducting-anode and metallic cathode. When an appropriate bias is applied to the device, holes are injected from the anode and electrons from the cathode; some of the recombination events between the holes and electrons result in electroluminescence (EL). Until now, most of the efforts in developing OLEDs have focused on display applications, hence on devices within the visible range. However some organic devices have been developed for ultraviolet or infrared emission. Various aspects of the device physics of doped small molecular OLEDs were described and discussed. The doping layer thickness and concentration were varied systematically to study their effects on device performances, energy transfer, and turn-off dynamics. Low-energy-gap DCM2 guest molecules, in either α-NPD or DPVBi host layers, are optically efficient fluorophores but also generate deep carrier trap-sites. Since their traps reduce the carrier mobility, the current density decreases with increased doping concentration. At the same time, due to efficient energy transfer, the quantum efficiency of the devices is improved by light doping or thin doping thickness, in comparison with the undoped neat devices. However, heavy doping induces concentration quenching effects. Thus, the doping concentration and doping thickness may be optimized for best performance.

  9. Fabrication of engineered particle-doped light diffuser with a soft transparent mold of UV-curable polymer

    Science.gov (United States)

    Zhu, Jicheng; Liu, Yanhua; Shen, Su; Wu, Jianhong

    2017-11-01

    Engineered particle-doped light diffuser is realized by a simple, low-cost soft lithographic method. A flexible photopolymerizable mold is employed as an intermediate transferring template directly from the developed photoresist texture to fabricate engineered particle-doped light diffuser. The well-designed surface microstructure can directionally scatter the incident light, while the doped ultra-violet curable resin with low concentration of the 2 μm-diameter organosilicone particles can homogenize the scattering light without decreasing transmittance. Experimental results show that the measured transmittance can be as high as 96.9% with little backscattering effect over the whole visible regime. Meanwhile, the haze raises from 30% to 75% with increased dopant concentration from 1 wt% to 7 wt% and thickness of the residual layer from 10 μm to 40 μm remained in the imprinting process. The proposed engineered particle-doped light diffuser can manage scattering angle, luminance uniformity and haze, thus it has the capability of homogenizing light and eliminating striations to create more visually pleasing structured lighting in commercial and residential environments. We anticipate that the approach appears to be a strong candidate for future development because of its scalable nature, environmentally-friendly process and relatively low cost.

  10. Hydrazine-based synergistic Ti(III)/N doping of surfactant-templated TiO{sub 2} thin films for enhanced visible light photocatalysis

    Energy Technology Data Exchange (ETDEWEB)

    Islam, Syed Z.; Rankin, Stephen E., E-mail: srankin@engr.uky.edu

    2016-10-01

    This study reports the preparation of titanium (Ti{sup 3+}) and nitrogen co-doped cubic ordered mesoporous TiO{sub 2} thin films using N{sub 2}H{sub 4} treatment. The resulting co-doped TiO{sub 2} (Ti{sup 3+}-N-TiO{sub 2}) thin films show significant enhancements in visible light absorption and photocatalytic activity. Cubic ordered mesoporous TiO{sub 2} thin films were prepared via a sol-gel method with Pluronic F127 as the pore template. After brief calcination, the TiO{sub 2} films were dipped into hydrazine hydrate which acts both as a nitrogen source and as a reducing agent, followed by heating at low temperature (90 °C). The hydrazine treatment period was varied from 5 to 20 h to obtain different degrees of reduction and nitrogen doping. X-ray photoelectron spectroscopy (XPS) analyses and UV–vis absorbance spectra of Ti{sup 3+}-N-TiO{sub 2} films indicate that the incorporated N atoms and Ti{sup 3+} reduce the band gap of TiO{sub 2} and thus enhance the absorption of visible light. The corresponding visible light photocatalytic activity of Ti{sup 3+}-N-TiO{sub 2} films was determined from the photocatalytic degradation of methylene blue under visible light illumination (at 455 nm). The Ti{sup 3+}-N-TiO{sub 2} films prepared with 10 h of treatment show the optimum photocatalytic activity, with a pseudo-first order rate coefficient of 0.12 h{sup −1}, which is 3 times greater than that of undoped TiO{sub 2} films. Calcination temperature and time were varied prior to hydrazine treatment to confirm that a brief calcination at low temperature (10 min at 350 °C) gave the best photochemical activity. In photoelectrochemical water oxidation using a 455 nm LED, the Ti{sup 3+}-N-TiO{sub 2} films prepared with 10 h of N{sub 2}H{sub 4} treatment show about 4 times the photocurrent compared to undoped TiO{sub 2} films. The present study suggests that hydrazine induced doping is a promising approach to enable synergistic incorporation of N and Ti{sup 3+} into the

  11. Efficiency enhancement of InGaN/GaN light-emitting diodes with pin-doped GaN quantum barrier

    International Nuclear Information System (INIS)

    Sirkeli, Vadim P; Al-Daffaie, Shihab; Oprea, Ion; Küppers, Franko; Hartnagel, Hans L; Yilmazoglu, Oktay; Ong, Duu Sheng

    2017-01-01

    Blue InGaN/GaN light-emitting diodes with undoped, heavily Si-doped, Si delta-doped, heavily Mg-doped, Mg delta-doped, and Mg–Si pin-doped GaN barrier are investigated numerically. The simulation results demonstrate that the Mg–Si pin-doping in the GaN barrier effectively reduces the polarization-induced electric field between the InGaN well and the GaN barrier in the multiple quantum well, suppresses the quantum-confined Stark effect, and enhances the hole injection and electron confinement in the active region. For this light-emitting diode (LED) device structure, we found that the turn-on voltage is 2.8 V, peak light emission is at 415.3 nm, and internal quantum efficiency is 85.9% at 100 A cm −2 . It is established that the LED device with Mg–Si pin-doping in the GaN barrier has significantly improved efficiency and optical output power performance, and lower efficiency droop up to 400 A cm −2 compared with LED device structures with undoped or Si(Mg)-doped GaN barrier. (paper)

  12. Enhanced photocatalytic property of BiFeO_3/N-doped graphene composites and mechanism insight

    International Nuclear Information System (INIS)

    Li, Pai; Li, Lei; Xu, Maji; Chen, Qiang; He, Yunbin

    2017-01-01

    Highlights: • A hydrothermal process was used to prepare BiFeO_3/N-doped graphene composites. • BiFeO_3/N-doped graphene exhibits superior photocatalytic activity and stability. • The energy band of BiFeO_3 bends downward by ∼1.0 eV at the composite interface. • Downward band bending leads to rapid electron transfer at the composite interface. • Holes and ·OH are predominant active species in the photo-degradation process. - Abstract: A series of BiFeO_3/(N-doped) graphene composites are prepared by a facile hydrothermal method. BiFeO_3/N-doped graphene shows photocatalytic performance superior to that of BiFeO_3/graphene and pristine BiFeO_3. The enhanced photo-degradation performance of BiFeO_3/N-doped graphene are mainly attributable to the improved light absorbance of the composite, abundant active adsorption sites and high electrical charge mobility of N-doped graphene, and the downward band bending of BiFeO_3 at the composite interface. In particular, X-ray photoelectron spectroscopy analyses reveal that the electron energy band of BiFeO_3 is downward bent by 1.0 eV at the interface of BiFeO_3/N-doped graphene, because of different work functions of both materials. This downward band bending facilitates the transfer of photogenerated electrons from BiFeO_3 to N-doped graphene and prompts the separation of photo-generated electron-hole pairs, leading eventually to the enhanced photocatalytic performance.

  13. Enhanced 1.32 μm fluorescence and broadband amplifying for O-band optical amplifier in Nd3+-doped tellurite glass

    Science.gov (United States)

    Zhou, Zi-zhong; Zhou, Ming-han; Su, Xiu-e.; Cheng, Pan; Zhou, Ya-xun

    2017-01-01

    WO3 oxides with relatively high phonon energy and different concentrations were introduced into the Nd3+-doped tellurite-based glasses of TeO2-ZnO-Na2O to improve the 1.32 μm band fluorescence emission. The absorption spectra, Raman spectra, 1.32 μm band fluorescence spectra and differential scanning calorimeter (DSC) curves were measured, together with the Judd-Ofelt intensity parameters, stimulated emission and gain parameters were calculated to evaluate the effects of WO3 amount on the glass structure and spectroscopic properties of 1.32 μm band fluorescence. It is shown that the introduction of an appropriate amount of WO3 oxide can effectively improve the 1.32 μm band fluorescence intensity through the enhanced multi-phonon relaxation (MPR) processes between the excited levels of Nd3+. The results indicate that the prepared Nd3+-doped tellurite glass with an appropriate amount of WO3 oxide is a potential gain medium applied for the O-band broad and high-gain fiber amplifier.

  14. Facile synthesis of phosphorus doped graphitic carbon nitride polymers with enhanced visible-light photocatalytic activity

    International Nuclear Information System (INIS)

    Zhang, Ligang; Chen, Xiufang; Guan, Jing; Jiang, Yijun; Hou, Tonggang; Mu, Xindong

    2013-01-01

    Graphical abstract: - Highlights: • P-doped g-C 3 N 4 has been prepared by a one-pot green synthetic approach. • The incorporation of P resulted in favorable textural and electronic properties. • Doping with P enhanced the visible-light photocatalytic activity of g-C 3 N 4 . • A postannealing treatment further enhanced the activity of P-doped g-C 3 N 4 . • Photogenerated holes were the main species responsible for the activity. - Abstract: Phosphorus-doped carbon nitride materials were prepared by a one-pot green synthetic approach using dicyandiamide monomer and a phosphorus containing ionic liquid as precursors. The as-prepared materials were subjected to several characterizations and investigated as metal-free photocatalysts for the degradation of organic pollutants (dyes like Rhodamine B, Methyl orange) in aqueous solution under visible light. Results revealed that phosphorus-doped carbon nitride have a higher photocatalytic activity for decomposing Rhodamine B and Methyl orange in aqueous solution than undoped g-C 3 N 4 , which was attributed to the favorable textural, optical and electronic properties caused by doping with phosphorus heteroatoms into carbon nitride host. A facile postannealing treatment further improved the activity of the photocatalytic system, due to the higher surface area and smaller structural size in the postcalcined catalysts. The phosphorus-doped carbon nitride showed high visible-light photocatalytic activity, making them promising materials for a wide range of potential applications in photochemistry

  15. Timescale stretch parameterization of Type Ia supernova B-band light curves

    International Nuclear Information System (INIS)

    Goldhaber, G.; Groom, D.E.; Kim, A.; Aldering, G.; Astier, P.; Conley, A.; Deustua, S.E.; Ellis, R.; Fabbro, S.; Fruchter, A.S.; Goobar, A.; Hook, I.; Irwin, M.; Kim, M.; Knop, R.A.; Lidman, C.; McMahon, R.; Nugent, P.E.; Pain, R.; Panagia, N.; Pennypacker, C.R.; Perlmutter, S.; Ruiz-Lapuente, P.; Schaefer, B.; Walton, N.A.; York, T.

    2001-01-01

    R-band intensity measurements along the light curve of Type Ia supernovae discovered by the Cosmology Project (SCP) are fitted in brightness to templates allowing a free parameter the time-axis width factor w identically equal to s times (1+z). The data points are then individually aligned in the time-axis, normalized and K-corrected back to the rest frame, after which the nearly 1300 normalized intensity measurements are found to lie on a well-determined common rest-frame B-band curve which we call the ''composite curve.'' The same procedure is applied to 18 low-redshift Calan/Tololo SNe with Z < 0.11; these nearly 300 B-band photometry points are found to lie on the composite curve equally well. The SCP search technique produces several measurements before maximum light for each supernova. We demonstrate that the linear stretch factor, s, which parameterizes the light-curve timescale appears independent of z, and applies equally well to the declining and rising parts of the light curve. In fact, the B band template that best fits this composite curve fits the individual supernova photometry data when stretched by a factor s with chi 2/DoF ∼ 1, thus as well as any parameterization can, given the current data sets. The measurement of the data of explosion, however, is model dependent and not tightly constrained by the current data. We also demonstrate the 1 + z light-cure time-axis broadening expected from cosmological expansion. This argues strongly against alternative explanations, such as tired light, for the redshift of distant objects

  16. Light-extraction enhancement of GaN-based 395  nm flip-chip light-emitting diodes by an Al-doped ITO transparent conductive electrode.

    Science.gov (United States)

    Xu, Jin; Zhang, Wei; Peng, Meng; Dai, Jiangnan; Chen, Changqing

    2018-06-01

    The distinct ultraviolet (UV) light absorption of indium tin oxide (ITO) limits the performance of GaN-based near-UV light-emitting diodes (LEDs). Herein, we report an Al-doped ITO with enhanced UV transmittance and low sheet resistance as the transparent conductive electrode for GaN-based 395 nm flip-chip near-UV LEDs. The thickness dependence of optical and electrical properties of Al-doped ITO films is investigated. The optimal Al-doped ITO film exhibited a transmittance of 93.2% at 395 nm and an average sheet resistance of 30.1  Ω/sq. Meanwhile, at an injection current of 300 mA, the forward voltage decreased from 3.14 to 3.11 V, and the light output power increased by 13% for the 395 nm near-UV flip-chip LEDs with the optimal Al-doped ITO over those with pure ITO. This Letter provides a simple and repeatable approach to further improve the light extraction efficiency of GaN-based near-UV LEDs.

  17. Effects of ultraviolet light on B-doped CdS thin films prepared by spray pyrolysis method using perfume atomizer

    Science.gov (United States)

    Novruzov, V. D.; Keskenler, E. F.; Tomakin, M.; Kahraman, S.; Gorur, O.

    2013-09-01

    Boron doped CdS thin films were deposited by spray pyrolysis method using perfume atomizer. The effects of ultraviolet light on the structural, optical and electrical properties of B-doped CdS thin films were investigated as a function of dopant concentration (B/Cd). X-ray diffraction studies showed that all samples were polycrystalline nature with hexagonal structure. It was determined that the preferred orientation of non-illuminated samples changes from (1 0 1) to (0 0 2) with B concentration. The c lattice constant of films decreases from 6.810 Å to 6.661 Å with boron doping. The XRD peak intensity increased with the illumination for almost all the samples. The lattice parameters of B-doped samples remained nearly constant after illumination. It was found that the optical transmittance, photoluminescence spectra, resistivity and carrier concentration of the B-doped samples are stable after the illumination with UV light. Also the effects of UV light on B-doped CdS/Cu2S solar cell were investigated and it was determined that photoelectrical parameters of B-doped solar cell were more durable against the UV light.

  18. Effects of ultraviolet light on B-doped CdS thin films prepared by spray pyrolysis method using perfume atomizer

    Energy Technology Data Exchange (ETDEWEB)

    Novruzov, V.D. [Department of Physics, Recep Tayyip Erdogan University, Rize (Turkey); Keskenler, E.F., E-mail: keskenler@gmail.com [Department of Nanotechnology Engineering, Recep Tayyip Erdogan University, Rize (Turkey); Tomakin, M. [Department of Physics, Recep Tayyip Erdogan University, Rize (Turkey); Kahraman, S. [Department of Physics, Mustafa Kemal University, Hatay (Turkey); Gorur, O. [Department of Physics, Abant Izzet Baysal University, Bolu (Turkey)

    2013-09-01

    Boron doped CdS thin films were deposited by spray pyrolysis method using perfume atomizer. The effects of ultraviolet light on the structural, optical and electrical properties of B-doped CdS thin films were investigated as a function of dopant concentration (B/Cd). X-ray diffraction studies showed that all samples were polycrystalline nature with hexagonal structure. It was determined that the preferred orientation of non-illuminated samples changes from (1 0 1) to (0 0 2) with B concentration. The c lattice constant of films decreases from 6.810 Å to 6.661 Å with boron doping. The XRD peak intensity increased with the illumination for almost all the samples. The lattice parameters of B-doped samples remained nearly constant after illumination. It was found that the optical transmittance, photoluminescence spectra, resistivity and carrier concentration of the B-doped samples are stable after the illumination with UV light. Also the effects of UV light on B-doped CdS/Cu{sub 2}S solar cell were investigated and it was determined that photoelectrical parameters of B-doped solar cell were more durable against the UV light.

  19. Aluminum doping tunes band gap energy level as well as oxidative stress-mediated cytotoxicity of ZnO nanoparticles in MCF-7 cells

    Science.gov (United States)

    Akhtar, Mohd Javed; Alhadlaq, Hisham A.; Alshamsan, Aws; Majeed Khan, M. A.; Ahamed, Maqusood

    2015-09-01

    We investigated whether Aluminum (Al) doping tunes band gap energy level as well as selective cytotoxicity of ZnO nanoparticles in human breast cancer cells (MCF-7). Pure and Al-doped ZnO nanoparticles were prepared by a simple sol-gel method. Characterization study confirmed the formation of single phase of AlxZn1-xO nanocrystals with the size range of 33-55 nm. Al-doping increased the band gap energy of ZnO nanoparticles (from 3.51 eV for pure to 3.87 eV for Al-doped ZnO). Al-doping also enhanced the cytotoxicity and oxidative stress response of ZnO nanoparticles in MCF-7 cells. The IC50 for undoped ZnO nanoparticles was 44 μg/ml while for the Al-doped ZnO counterparts was 31 μg/ml. Up-regulation of apoptotic genes (e.g. p53, bax/bcl2 ratio, caspase-3 & caspase-9) along with loss of mitochondrial membrane potential suggested that Al-doped ZnO nanoparticles induced apoptosis in MCF-7 cells through mitochondrial pathway. Importantly, Al-doping did not change the benign nature of ZnO nanoparticles towards normal cells suggesting that Al-doping improves the selective cytotoxicity of ZnO nanoparticles toward MCF-7 cells without affecting the normal cells. Our results indicated a novel approach through which the inherent selective cytotoxicity of ZnO nanoparticles against cancer cells can be further improved.

  20. Effects of doping parameters on the CIE value of flexible white organic light emitting diodes

    Energy Technology Data Exchange (ETDEWEB)

    Juang Fuhshyang; Lin Mingyein; Yang Chanyi [Institute of Electro-Optical and Materials Science, National Huwei University of Science and Technology, Huwei, Yunlin (Taiwan); Tsai Yusheng [Department of Electro-Optics Engineering, National Huwei University of Science and Technology, Huwei, Yunlin (Taiwan); Lin, David [Windell Corporation, 1F, No. 9, Kung-Yen 7 Road, Industrial Zone, Taichung (Taiwan); Wang Wentunn; Shen Chaiyuan [Electronics Research and Service Organization, Industrial Technology Research Institute, 195 Chung Hsing Rd., Sec. 4 Chu Tung, Hsin Chu (Taiwan)

    2004-09-01

    Red dopants were doped in different emitters, blue and green, respectively, to fabricate white organic light emitting diodes on flexible substrates. The competitive emission between blue and red emitters with various doped-zones was studied. When the DCJT doped zone was located far away from the hole-injection layer, both the blue and red color can be emitted. An appropriate red-dopant position in the device enhanced the green emission from 8-hydroxyquinoline aluminum (Alq3) which was combined with the red and blue emission to generate a white light. Finally, a white emission with the CIE value, (0.30, 0.32), independent of the applied voltage, was obtained with the optimum doped width and location. (copyright 2004 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  1. Gain flattened L-band EDFA based on upgraded C-band EDFA using forward ASE pumping in an EDF section

    DEFF Research Database (Denmark)

    Buxens Azcoaga, Alvaro Juan; Poulsen, Henrik Nørskov; Clausen, Anders

    2000-01-01

    A novel method is presented for implementing an L-band erbium doped fibre amplifier (EDFA) making use of forward amplified spontaneous emission pumping, from a commercially available c-band EDFA, in an erbium doped fibre. Tuning of the length of erbium doped fibre enables a flat gain characteristic...... to be obtained with a low noise figure over the entire L-band window....

  2. Transparent nanostructured Fe-doped TiO2 thin films prepared by ultrasonic assisted spray pyrolysis technique

    Science.gov (United States)

    Rasoulnezhad, Hossein; Hosseinzadeh, Ghader; Ghasemian, Naser; Hosseinzadeh, Reza; Homayoun Keihan, Amir

    2018-05-01

    Nanostructured TiO2 and Fe-doped TiO2 thin films with high transparency were deposited on glass substrate through ultrasonic-assisted spray pyrolysis technique and were used in the visible light photocatalytic degradation of MB dye. The resulting thin films were characterized by scanning electron microscopy (SEM), Raman spectroscopy, photoluminescence spectroscopy, x-ray diffraction (XRD), and UV-visible absorption spectroscopy techniques. Based on Raman spectroscopy results, both of the TiO2 and Fe-doped TiO2 films have anatase crystal structure, however, because of the insertion of Fe in the structure of TiO2 some point defects and oxygen vacancies are formed in the Fe-doped TiO2 thin film. Presence of Fe in the structure of TiO2 decreases the band gap energy of TiO2 and also reduces the electron–hole recombination rate. Decreasing of the electron–hole recombination rate and band gap energy result in the enhancement of the visible light photocatalytic activity of the Fe-doped TiO2 thin film.

  3. Switching mechanism due to the spontaneous emission cancellation in photonic band gap materials doped with nano-particles

    Energy Technology Data Exchange (ETDEWEB)

    Singh, Mahi R. [Department of Physics and Astronomy, University of Western Ontario, London, Canada N6A 3K7 (Canada)]. E-mail: msingh@uwo.ca

    2007-03-26

    We have investigated the switching mechanism due to the spontaneous emission cancellation in a photonic band gap (PBG) material doped with an ensemble of four-level nano-particles. The effect of the dipole-dipole interaction has also been studied. The linear susceptibility has been calculated in the mean field theory. Numerical simulations for the imaginary susceptibility are performed for a PBG material which is made from periodic dielectric spheres. It is predicted that the system can be switched between the absorbing state and the non-absorbing state by changing the resonance energy within the energy bands of the photonic band gap material.0.

  4. Doping evolution of the electronic structure in the single-layer cuprates Bi2Sr2−xLaxCuO6 delta: Comparison with other single-layer cuprates

    Energy Technology Data Exchange (ETDEWEB)

    Hashimoto, M.

    2010-04-30

    We have performed angle-resolved photoemission and core-level x-ray photoemission studies of the single-layer cuprate Bi{sub 2}Sr{sub 2-x}La{sub x}CuO{sub 6+{delta}} (Bi2201) and revealed the doping evolution of the electronic structure from the lightly-doped to optimally-doped regions. We have observed the formation of the dispersive quasi-particle band, evolution of the Fermi 'arc' into the Fermi surface and the shift of the chemical potential with hole doping as in other cuprates. The doping evolution in Bi2201 is similar to that in Ca{sub 2-x}Na{sub x}CuO{sub 2}Cl{sub 2} (Na-CCOC), where a rapid chemical potential shift toward the lower Hubbard band of the parent insulator has been observed, but is quite different from that in La{sub 2-x}Sr{sub x}CuO{sub 4} (LSCO), where the chemical potential does not shift, yet the dispersive band and the Fermi arc/surface are formed around the Fermi level already in the lightly-doped region. The (underlying) Fermi surface shape and band dispersions are quantitatively analyzed using tightbinding fit, and the deduced next-nearest-neighbor hopping integral t also confirm the similarity to Na-CCOC and the difference from LSCO.

  5. Band structure, band offsets, substitutional doping, and Schottky barriers of bulk and monolayer InSe

    Science.gov (United States)

    Guo, Yuzheng; Robertson, John

    2017-09-01

    We present a detailed study of the electronic structure of the layered semiconductor InSe. We calculate the band structure of the monolayer and bulk material using density functional theory, hybrid functionals, and G W . The band gap of the monolayer InSe is calculated to be 2.4 eV in screened exchange hybrid functional, close to the experimental photoluminescence gap. The electron affinities and band offsets are calculated for vertical stacked-layer heterostructures, and are found to be suitable for tunnel field effect transistors (TFETs) in combination with WS e2 or similar. The valence-band edge of InSe is calculated to lie 5.2 eV below the vacuum level, similar to that for the closed shell systems HfS e2 or SnS e2 . Hence InSe would be suitable to act as a p -type drain in the TFET. The intrinsic defects are calculated. For Se-rich layers, the Se adatom (interstitial) is found to be the most stable defect, whereas for In-rich layers, the Se vacancy is the most stable for the neutral state. Antisites tend to have energies just above those of vacancies. The Se antisite distorts towards a bond-breaking distortion as in the EL2 center of GaAs. Both substitutional donors and acceptors are calculated to be shallow, and effective dopants. They do not reconstruct to form nondoping configurations as occurs in black phosphorus. Finally, the Schottky barriers of metals on InSe are found to be strongly pinned by metal induced gap states (MIGS) at ˜0.5 eV above the valence-band edge. Any interfacial defects would lead to a stronger pinning at a similar energy. Overall, InSe is an effective semiconductor combining the good features of 2D (lack of dangling bonds, etc.) with the good features of 3D (effective doping), which few others achieve.

  6. Enhanced visible light photocatalytic degradation of methylene blue by F-doped TiO{sub 2}

    Energy Technology Data Exchange (ETDEWEB)

    Yu, Wei [Engineering Research Center for Nanophotonics and Advanced Instrument, Ministry of Education, Department of Physics, East China Normal University, Shanghai 200062 (China); Liu, Xinjuan, E-mail: lxj669635@126.com [Shanghai Nanotechnlogy Promotion Center, Shanghai 200237 (China); Center for Coordination Bond and Electronic Engineering, College of Materials Science and Engineering, China Jiliang University, Hangzhou 310018 (China); Pan, Likun, E-mail: lkpan@phy.ecnu.edu.cn [Engineering Research Center for Nanophotonics and Advanced Instrument, Ministry of Education, Department of Physics, East China Normal University, Shanghai 200062 (China); Li, Jinliang; Liu, Junying [Engineering Research Center for Nanophotonics and Advanced Instrument, Ministry of Education, Department of Physics, East China Normal University, Shanghai 200062 (China); Zhang, Jing; Li, Ping; Chen, Chen [Shanghai Nanotechnlogy Promotion Center, Shanghai 200237 (China); Sun, Zhuo [Engineering Research Center for Nanophotonics and Advanced Instrument, Ministry of Education, Department of Physics, East China Normal University, Shanghai 200062 (China)

    2014-11-15

    Graphical abstract: F-doped TiO2 is synthesized using a modified sol–gel method for visible photocatalytic degradation of MB with a high degradation rate of 91%. - Highlights: • F-doped TiO{sub 2} are synthesized using a modified sol–gel method. • The photocatalytic degradation of methylene blue by F-doped TiO{sub 2} is investigated. • A high methylene blue degradation rate of 91% is achieved under visible light irradiation. - Abstract: F-doped TiO{sub 2} (F-TiO{sub 2}) were successfully synthesized using a modified sol–gel method. The morphologies, structures, and photocatalytic performance in the degradation of methylene blue (MB) were characterized by scanning electron microscopy, transmission electron microscopy, X-ray diffraction, UV–vis absorption spectroscopy, and electrochemical impedance spectra, respectively. The results show that F-TiO{sub 2} exhibits an enhanced photocatalytic performance in the degradation of MB with a maximum degradation rate of 91% under visible light irradiation as compared with pure TiO{sub 2} (32%). The excellent photocatalytic activity is due to the contribution from the increased visible light absorption, promoted separation of photo-generated electrons and holes as well as enhanced photocatalytic oxidizing species with the doping of F in TiO{sub 2}.

  7. Unusual near-band-edge photoluminescence at room temperature in heavily-doped ZnO:Al thin films prepared by pulsed laser deposition

    International Nuclear Information System (INIS)

    Mohanty, Bhaskar Chandra; Yeon, Deuk Ho; Das, Sachindra Nath; Kwak, Ji Hye; Yoon, Kyung Hoon; Cho, Yong Soo

    2013-01-01

    Room temperature photoluminescence (PL) properties of heavily-doped ZnO:Al thin films (with carrier concentration n in the range of 5–20 × 10 20 cm −3 ) prepared by pulsed laser deposition have been investigated. Despite their high carrier concentration, the films exhibited strong room temperature near-band-edge bound excitons at ∼3.34 eV and an unusual peak at ∼3.16 eV, and negligible deep-level emission even for the films deposited at a temperature as low as 25 °C. The radiative efficiency of the films increased with growth temperature as a result of increased n and improved crystallinity. A large blue shift of optical band gap was observed, which is consistent with the n-dependent Burstein–Moss and band gap-renormalization effects. Comparison of the results of the PL and optical measurements revealed a large Stokes shift that increased with increase in n. It has been explained by a model based on local potential fluctuations caused by randomly-distributed doping impurities. - Highlights: • Studied PL properties of heavily-doped ZnO:Al films grown by PLD. • Unusual strong near-band-edge emissions and negligible deep-level emission at RT. • Increased optical band gap with growth temperature and thus carrier concentration. • Stokes shift and PL peak width increased with carrier concentration. • Results explained by a model based on local potential fluctuations

  8. Room Temperature Direct Band Gap Emission from Ge p-i-n Heterojunction Photodiodes

    Directory of Open Access Journals (Sweden)

    E. Kasper

    2012-01-01

    Full Text Available Room temperature direct band gap emission is observed for Si-substrate-based Ge p-i-n heterojunction photodiode structures operated under forward bias. Comparisons of electroluminescence with photoluminescence spectra allow separating emission from intrinsic Ge (0.8 eV and highly doped Ge (0.73 eV. Electroluminescence stems from carrier injection into the intrinsic layer, whereas photoluminescence originates from the highly n-doped top layer because the exciting visible laser wavelength is strongly absorbed in Ge. High doping levels led to an apparent band gap narrowing from carrier-impurity interaction. The emission shifts to higher wavelengths with increasing current level which is explained by device heating. The heterostructure layer sequence and the light emitting device are similar to earlier presented photodetectors. This is an important aspect for monolithic integration of silicon microelectronics and silicon photonics.

  9. Broad self-trapped and slow light bands based on negative refraction and interference of magnetic coupled modes

    International Nuclear Information System (INIS)

    Fang, Yun-tuan; Ni, Zhi-yao; Zhu, Na; Zhou, Jun

    2016-01-01

    We propose a new mechanism to achieve light localization and slow light. Through the study on the coupling of two magnetic surface modes, we find a special convex band that takes on a negative refraction effect. The negative refraction results in an energy flow concellation effect from two degenerated modes on the convex band. The energy flow concellation effect leads to forming of the self-trapped and slow light bands. In the self-trapped band light is localized around the source without reflection wall in the waveguide direction, whereas in the slow light band, light becomes the standing-waves and moving standing-waves at the center and the two sides of the waveguide, respectively. (paper)

  10. Broad self-trapped and slow light bands based on negative refraction and interference of magnetic coupled modes.

    Science.gov (United States)

    Fang, Yun-Tuan; Ni, Zhi-Yao; Zhu, Na; Zhou, Jun

    2016-01-13

    We propose a new mechanism to achieve light localization and slow light. Through the study on the coupling of two magnetic surface modes, we find a special convex band that takes on a negative refraction effect. The negative refraction results in an energy flow concellation effect from two degenerated modes on the convex band. The energy flow concellation effect leads to forming of the self-trapped and slow light bands. In the self-trapped band light is localized around the source without reflection wall in the waveguide direction, whereas in the slow light band, light becomes the standing-waves and moving standing-waves at the center and the two sides of the waveguide, respectively.

  11. Amorphous TiO2 doped with carbon for visible light photodegradation of rhodamine B and 4-chlorophenol

    International Nuclear Information System (INIS)

    Shao, Penghui; Tian, Jiayu; Zhao, Zhiwei; Shi, Wenxin; Gao, Shanshan; Cui, Fuyi

    2015-01-01

    Graphical abstract: - Highlights: • Amorphous TiO 2 doped with carbon is prepared as a visible photocatalyst. • RhB and 4-chlorophenol are decomposed effectively by carbon-doped amorphous TiO 2 . • The mechanism for visible light photocatalysis is discussed detailedly. - Abstract: Visible light photocatalytic activity of amorphous TiO 2 doped with carbon is prepared by a facile sol-gel route for the first time. The most active sample with mesostructure of amorphous phase, high surface area (273 m 2 g −1 ) and large pore volume (0.33 cm 3 g −1 ) is identified by X-ray diffractometer, Raman spectrometer, transmission electron microscope and N 2 adsorption–desorption isotherms. In addition, the most active sample is characterized by Fourier transform-infrared spectrometer, X-ray photoelectron spectrometer, UV–vis diffuse reflectance spectrometer and luminescence spectrometer. The results show that the most active sample with oxygenic groups has a narrower bandgap and lower recombination of electron–hole, due to the carbon doping and phase of amorphous. Effective photodegradation capability and stability of rhodamine B and colorless 4-chlorophenol are verified by photocatalytic tests under visible light irradiation. A possible mechanism of amorphous TiO 2 doped with carbon for visible light photocatalysis is proposed. The findings of this paper will provide new insights to design visible light-induced photocatalyst based on amorphous TiO 2 for organic removal

  12. High Thermoelectric Performance by Convergence of Bands in IV-VI Semiconductors, Heavily Doped PbTe, and Alloys/Nanocomposites

    Science.gov (United States)

    Snyder, G. Jeffrey (Inventor); Pei, Yanzhong (Inventor)

    2015-01-01

    The present invention teaches an effective mechanism for enhancing thermoelectric performance through additional conductive bands. Using heavily doped p-PbTe materials as an example, a quantitative explanation is disclosed, as to why and how these additional bands affect the figure of merit. A high zT of approaching 2 at high temperatures makes these simple, likely more stable (than nanostructured materials) and Tl-free materials excellent for thermoelectric applications.

  13. Manipulation and control of the interfacial polarization in organic light-emitting diodes by dipolar doping

    Directory of Open Access Journals (Sweden)

    Lars Jäger

    2016-09-01

    Full Text Available Most of the commonly used electron transporting materials in organic light-emitting diodes exhibit interfacial polarization resulting from partially aligned permanent dipole moments of the molecules. This property modifies the internal electric field distribution of the device and therefore enables an earlier flat band condition for the hole transporting side, leading to improved charge carrier injection. Recently, this phenomenon was studied with regard to different materials and degradation effects, however, so far the influence of dilution has not been investigated. In this paper we focus on dipolar doping of the hole transporting material 4,4-bis[N-(1-naphthyl-N-phenylamino]-biphenyl (NPB with the polar electron transporting material tris-(8-hydroxyquinolate aluminum (Alq3. Impedance spectroscopy reveals that changes of the hole injection voltage do not scale in a simple linear fashion with the effective thickness of the doped layer. In fact, the measured interfacial polarization reaches a maximum value for a 1:1 blend. Taking the permanent dipole moment of Alq3 into account, an increasing degree of dipole alignment is found for decreasing Alq3 concentration. This observation can be explained by the competition between dipole-dipole interactions leading to dimerization and the driving force for vertical orientation of Alq3 dipoles at the surface of the NPB layer.

  14. Manipulation and control of the interfacial polarization in organic light-emitting diodes by dipolar doping

    Science.gov (United States)

    Jäger, Lars; Schmidt, Tobias D.; Brütting, Wolfgang

    2016-09-01

    Most of the commonly used electron transporting materials in organic light-emitting diodes exhibit interfacial polarization resulting from partially aligned permanent dipole moments of the molecules. This property modifies the internal electric field distribution of the device and therefore enables an earlier flat band condition for the hole transporting side, leading to improved charge carrier injection. Recently, this phenomenon was studied with regard to different materials and degradation effects, however, so far the influence of dilution has not been investigated. In this paper we focus on dipolar doping of the hole transporting material 4,4-bis[N-(1-naphthyl)-N-phenylamino]-biphenyl (NPB) with the polar electron transporting material tris-(8-hydroxyquinolate) aluminum (Alq3). Impedance spectroscopy reveals that changes of the hole injection voltage do not scale in a simple linear fashion with the effective thickness of the doped layer. In fact, the measured interfacial polarization reaches a maximum value for a 1:1 blend. Taking the permanent dipole moment of Alq3 into account, an increasing degree of dipole alignment is found for decreasing Alq3 concentration. This observation can be explained by the competition between dipole-dipole interactions leading to dimerization and the driving force for vertical orientation of Alq3 dipoles at the surface of the NPB layer.

  15. Origin of electrophosphorescence from a doped polymer light emitting diode

    International Nuclear Information System (INIS)

    Lane, P. A.; Palilis, L. C.; O'Brien, D. F.; Giebeler, C.; Cadby, A. J.; Lidzey, D. G.; Campbell, A. J.; Blau, W.; Bradley, D. D. C.

    2001-01-01

    The origin of electrophosphorescence from a doped polymer light emitting diode (LED) has been investigated. A luminescent polymer host, poly(9,9-dioctylfluorene) (PFO), was doped with a red phosphorescent dye, 2,3,7,8,12,13,17,18-octaethyl-21H,23H-porphyrin platinum(II) (PtOEP). The maximum external quantum efficiency of 3.5% was obtained at a concentration of 4% PtOEP by weight. Energy transfer mechanisms between PFO and PtOEP were studied by absorption, photoluminescence, and photoinduced absorption spectroscopy. Even though electroluminescence spectra were dominated by PtOEP at a concentration of only 0.2 wt% PtOEP, Forster transfer of singlet excitons was weak and there was no evidence for Dexter transfer of triplet excitons. We conclude that the dominant emission mechanism in doped LED's is charge trapping followed by recombination on PtOEP molecules

  16. High-efficiency white organic light-emitting devices with a non-doped yellow phosphorescent emissive layer

    Energy Technology Data Exchange (ETDEWEB)

    Zhao Juan; Yu Junsheng, E-mail: jsyu@uestc.edu.cn; Hu Xiao; Hou Menghan; Jiang Yadong

    2012-03-30

    Highly efficient phosphorescent white organic light-emitting devices (PHWOLEDs) with a simple structure of ITO/TAPC (40 nm)/mCP:FIrpic (20 nm, x wt.%)/bis[2-(4-tertbutylphenyl)benzothiazolato-N,C{sup 2} Prime ] iridium (acetylacetonate) (tbt){sub 2}Ir(acac) (y nm)/Bphen (30 nm)/Mg:Ag (200 nm) have been developed, by inserting a thin layer of non-doped yellow phosphorescent (tbt){sub 2}Ir(acac) between doped blue emitting layer (EML) and electron transporting layer. By changing the doping concentration of the blue EML and the thickness of the non-doped yellow EML, a PHWOLED comprised of higher blue doping concentration and thinner yellow EML achieves a high current efficiency of 31.7 cd/A and Commission Internationale de l'Eclairage coordinates of (0.33, 0.41) at a luminance of 3000 cd/m{sup 2} could be observed. - Highlights: Black-Right-Pointing-Pointer We introduce a simplified architecture for phosphorescent white organic light-emitting device. Black-Right-Pointing-Pointer The key concept of device fabrication is combination of doped blue emissive layer (EML) with non-doped ultra-thin yellow EML. Black-Right-Pointing-Pointer Doping concentration of the blue EML and thickness of the yellow EML are sequentially adjusted. Black-Right-Pointing-Pointer High device performance is achieved due to improved charge carrier balance as well as two parallel emission mechanisms in the EMLs.

  17. Effect of thickness on microwave absorptive behavior of La-Na doped Co-Zr barium hexaferrites in 18.0–26.5 GHz band

    Energy Technology Data Exchange (ETDEWEB)

    Arora, Amit [D.A.V. Institute of Engineering and Technology, Jalandhar (India); Narang, Sukhleen Bindra, E-mail: sukhleen2@yahoo.com [Department of Electronics Technology, Guru Nanak Dev University, Amritsar (India); Pubby, Kunal [Department of Electronics Technology, Guru Nanak Dev University, Amritsar (India)

    2017-02-01

    In this research, the microwave properties of Lanthanum-Sodium doped Cobalt-Zirconium barium hexaferrites, intended as microwave absorbers, are analyzed on Vector Network Analyzer in K-band. The results indicate that the doping has resulted in lowering of real permittivity and enhancement of dielectric losses. Real permeability has shown increase while magnetic losses have shown decrease in value with doping. All these four properties have shown very small variation with frequency in the scanned frequency range which indicates the relaxation type of behavior. Microwave absorption characteristics of these compositions are analyzed with change in sample thickness. The results demonstrate that the matching frequency of the microwave absorber shifts towards lower side of frequency band with increase in thickness. The complete analysis of the prepared microwave absorbers shows a striking achievement with very low reflection loss and wide absorption bandwidth for all the six compositions in 18–26.5 GHz frequency band. - Highlights: • Electromagnetic Characterization of M-hexaferrites in K-band (18–26.5 GHz) • Variation of absorption properties with thickness of sample. • Satisfaction of quarter-wavelength condition for absorption properties • Results of double-layer absorbers (not reports till day by anyone).

  18. Hydrothermal Synthesis of Nitrogen-Doped Titanium Dioxide and Evaluation of Its Visible Light Photocatalytic Activity

    Directory of Open Access Journals (Sweden)

    Junjie Qian

    2012-01-01

    Full Text Available Nitrogen-doped titanium dioxide (N-doped TiO2 photocatalyst was synthesized from nanotube titanic acid (denoted as NTA; molecular formula H2Ti2O5·H2O precursor via a hydrothermal route in ammonia solution. As-synthesized N-doped TiO2 catalysts were characterized by means of X-ray diffraction, transmission electron microscopy, diffuse reflectance spectrometry, X-ray photoelectron spectroscopy, electron spin resonance spectrometry and Fourier transform infrared spectrometry. It was found that nanotube ammonium titanate (NAT was produced as an intermediate during the preparation of N-doped TiO2 from NTA, as evidenced by the N1s X-ray photoelectron spectroscopic peak of NH4 + at 401.7 eV. The catalyst showed much higher activities to the degradation of methylene blue and p-chlorophenol under visible light irradiation than Degussa P25. This could be attributed to the enhanced absorption of N-doped TiO2 in visible light region associated with the formation of single-electron-trapped oxygen vacancies and the inhibition of recombination of photo-generated electron-hole pair by doped nitrogen.

  19. Luminescence studies on Dy3+ doped calcium boro-tellurite glasses for White light applications

    Science.gov (United States)

    Karthikeyan, P.; Vijayakumar, R.; Marimuthu, K.

    2017-09-01

    A new series of Dy3+ doped calcium boro-tellurite glasses have been prepared by melt quenching technique and their spectroscopic properties were studied through FTIR, absorption luminescence and lifetime spectral measurements. FTIR studies have been made to explore the presence of various stretching and bending vibrations of different borate and tellurite groups in the prepared glasses. The bonding parameter values were estimated from the absorption band positions using Nephelauxetic ratios to examine the nature of the metal-ligand bond. The optical band gap and Urbach energy (ΔE) values were obtained from the absorption spectra to explore the electronic band structure of the studied glasses. Judd-Ofelt (JO) theory have been used to determine the JO intensity parameters (Ω2, Ω4, Ω6) following the least square fitting procedure between the experimental and calculated oscillator strength values. The luminescence spectra of the Dy3+ doped calcium boro-tellurite glasses exhibit two intense emission bands corresponding to the 4F9/2→6H15/2 and 4F9/2→6H13/2 transitions. Further, they exhibit less intense emission band due to the 4F9/2→6H11/2 transition. Luminescence spectra were characterized through CIE 1931 chromaticity diagram to obtain the dominant emission color of the prepared glasses. The JO intensity parameters and refractive index values have been used to calculate the radiative parameters such as transition probabilities (AR), branching ratios (βR) and stimulated emission cross-section (σPE) values for the observed transitions in the luminescence spectra. The decay curves of all the studied glasses found to exhibit non-exponential behavior and further to understand the energy transfer process takes place between the Dy3+ ions, the decay curves were fitted to the Inokuti-Hirayama (IH) model. The structural and optical properties of the Dy3+ doped calcium boro-tellurite glasses have been studied as a function of different metal cations (Zn, Cd, Pb and

  20. Study on electrical structure and magneto-optical properties of W-doped ZnO

    Science.gov (United States)

    Li, Yong; Hou, Qingyu; Zhao, Chunwang; Xu, Zhenchao

    2018-04-01

    For W-doping amounts ranging from 0.0417 to 0.0833, experimental UV-visible absorption spectra blue shift and red shift results have been reported in the literatures. However, there is few literature reported research on magnetic mechanism. To solve this problem, this study investigates the disagreement about blue shift and red shift results and research on magnetic mechanism. The band structures, density of states, absorption spectra and magnetism have been investigated using first-principles planewave ultrasoft pseudopotential method based on the density functional theory. The calculated results showed that increased W-doping amounts first increase the volumes, and then reduce the volumes, decrease the formation energies, and stabilize the doped system. The band gaps become narrower and the absorption spectrum exhibits a significant red shift in UV and visible light emission. Moreover, the covalent bond vertical to c-axis strengthens, and the ionic bond parallel to c-axis weakens. Increased W-doping amounts decrease the magnetism of doped system. The magnetism of doped system originates from the electron exchange among W-5d, O-2p and Zn-3d orbitals of the W-doped ZnO. In W double-doped system, the ferromagnetic Curie temperature can be above room temperature when the doped system has a longer W-W distance.

  1. High energy transmission of Al2O3 doped with light transition metals

    KAUST Repository

    Schuster, Cosima

    2012-01-31

    The transmission of transparent colored ceramics based on Al2O3doped with light transition metals is measured in the visible and infrared range. To clarify the role of the dopands we perform ab initiocalculations. We discuss the electronic structure and present optical spectra obtained in the independent particle approximation. We argue that the gross spectral features of Co- and Ni-doped Al2O3 samples are described by our model, while the validity of the approach is limited for Cr-doped Al2O3.

  2. High energy transmission of Al2O3 doped with light transition metals

    KAUST Repository

    Schuster, Cosima; Klimke, J.; Schwingenschlö gl, Udo

    2012-01-01

    The transmission of transparent colored ceramics based on Al2O3doped with light transition metals is measured in the visible and infrared range. To clarify the role of the dopands we perform ab initiocalculations. We discuss the electronic structure and present optical spectra obtained in the independent particle approximation. We argue that the gross spectral features of Co- and Ni-doped Al2O3 samples are described by our model, while the validity of the approach is limited for Cr-doped Al2O3.

  3. Correlation of Photocatalytic Activity with Band Structure of Low-dimensional Semiconductor Nanostructures

    Science.gov (United States)

    Meng, Fanke

    Photocatalytic hydrogen generation by water splitting is a promising technique to produce clean and renewable solar fuel. The development of effective semiconductor photocatalysts to obtain efficient photocatalytic activity is the key objective. However, two critical reasons prevent wide applications of semiconductor photocatalysts: low light usage efficiency and high rates of charge recombination. In this dissertation, several low-dimensional semiconductors were synthesized with hydrothermal, hydrolysis, and chemical impregnation methods. The band structures of the low-dimensional semiconductor materials were engineered to overcome the above mentioned two shortcomings. In addition, the correlation between the photocatalytic activity of the low-dimensional semiconductor materials and their band structures were studied. First, we studied the effect of oxygen vacancies on the photocatalytic activity of one-dimensional anatase TiO2 nanobelts. Given that the oxygen vacancy plays a significant role in band structure and photocatalytic performance of semiconductors, oxygen vacancies were introduced into the anatase TiO2 nanobelts during reduction in H2 at high temperature. The oxygen vacancies of the TiO2 nanobelts boosted visible-light-responsive photocatalytic activity but weakened ultraviolet-light-responsive photocatalytic activity. As oxygen vacancies are commonly introduced by dopants, these results give insight into why doping is not always beneficial to the overall photocatalytic performance despite increases in absorption. Second, we improved the photocatalytic performance of two-dimensional lanthanum titanate (La2Ti2 O7) nanosheets, which are widely studied as an efficient photocatalyst due to the unique layered crystal structure. Nitrogen was doped into the La2Ti2O7 nanosheets and then Pt nanoparticles were loaded onto the La2Ti2O7 nanosheets. Doping nitrogen narrowed the band gap of the La2Ti 2O7 nanosheets by introducing a continuum of states by the valence

  4. Enhanced photocatalytic activity for H2 evolution under irradiation of UV-vis light by Au-modified nitrogen-doped TiO2.

    Science.gov (United States)

    Zhao, Weirong; Ai, Zhuyu; Dai, Jiusong; Zhang, Meng

    2014-01-01

    Photocatalytic water splitting for hydrogen evolution is a potential way to solve many energy and environmental issues. Developing visible-light-active photocatalysts to efficiently utilize sunlight and finding proper ways to improve photocatalytic activity for H2 evolution have always been hot topics for research. This study attempts to expand the use of sunlight and to enhance the photocatalytic activity of TiO2 by N doping and Au loading. Au/N-doped TiO2 photocatalysts were synthesized and successfully used for photocatalytic water splitting for H2 evolution under irradiation of UV and UV-vis light, respectively. The samples were characterized using X-ray diffraction (XRD), transmission electron microscopy (TEM), X-ray photoelectron spectroscopy (XPS), UV-vis diffuse reflectance spectroscopy (DRS), photoluminescence spectroscopy (PL), and photoelectrochemical characterizations. DRS displayed an extension of light absorption into the visible region by doping of N and depositing with Au, respectively. PL analysis indicated electron-hole recombination due to N doping and an efficient inhibition of electron-hole recombination due to the loaded Au particles. Under the irradiation of UV light, the photocatalytic hydrogen production rate of the as-synthesized samples followed the order Au/TiO2 > Au/N-doped TiO2 > TiO2 > N-doped TiO2. While under irradiation of UV-vis light, the N-TiO2 and Au/N-TiO2 samples show higher H2 evolution than their corresponding nitrogen-free samples (TiO2 and Au/TiO2). This inconsistent result could be attributed to the doping of N and the surface plasmonic resonance (SPR) effect of Au particles extending the visible light absorption. The photoelectrochemical characterizations further indicated the enhancement of the visible light response of Au/N-doped TiO2. Comparative studies have shown that a combination of nitrogen doping and Au loading enhanced the visible light response of TiO2 and increased the utilization of solar energy, greatly

  5. Enhanced photocatalytic activity for H2 evolution under irradiation of UV-vis light by Au-modified nitrogen-doped TiO2.

    Directory of Open Access Journals (Sweden)

    Weirong Zhao

    Full Text Available BACKGROUND PURPOSE: Photocatalytic water splitting for hydrogen evolution is a potential way to solve many energy and environmental issues. Developing visible-light-active photocatalysts to efficiently utilize sunlight and finding proper ways to improve photocatalytic activity for H2 evolution have always been hot topics for research. This study attempts to expand the use of sunlight and to enhance the photocatalytic activity of TiO2 by N doping and Au loading. METHODS: Au/N-doped TiO2 photocatalysts were synthesized and successfully used for photocatalytic water splitting for H2 evolution under irradiation of UV and UV-vis light, respectively. The samples were characterized using X-ray diffraction (XRD, transmission electron microscopy (TEM, X-ray photoelectron spectroscopy (XPS, UV-vis diffuse reflectance spectroscopy (DRS, photoluminescence spectroscopy (PL, and photoelectrochemical characterizations. RESULTS: DRS displayed an extension of light absorption into the visible region by doping of N and depositing with Au, respectively. PL analysis indicated electron-hole recombination due to N doping and an efficient inhibition of electron-hole recombination due to the loaded Au particles. Under the irradiation of UV light, the photocatalytic hydrogen production rate of the as-synthesized samples followed the order Au/TiO2 > Au/N-doped TiO2 > TiO2 > N-doped TiO2. While under irradiation of UV-vis light, the N-TiO2 and Au/N-TiO2 samples show higher H2 evolution than their corresponding nitrogen-free samples (TiO2 and Au/TiO2. This inconsistent result could be attributed to the doping of N and the surface plasmonic resonance (SPR effect of Au particles extending the visible light absorption. The photoelectrochemical characterizations further indicated the enhancement of the visible light response of Au/N-doped TiO2. CONCLUSION: Comparative studies have shown that a combination of nitrogen doping and Au loading enhanced the visible light response of

  6. Influence of a deep-level-defect band formed in a heavily Mg-doped GaN contact layer on the Ni/Au contact to p-GaN

    International Nuclear Information System (INIS)

    Li Xiao-Jing; Zhao De-Gang; Jiang De-Sheng; Chen Ping; Zhu Jian-Jun; Liu Zong-Shun; Yang Jing; He Xiao-Guang; Yang Hui; Zhang Li-Qun; Zhang Shu-Ming; Le Ling-Cong; Liu Jian-Ping

    2015-01-01

    The influence of a deep-level-defect (DLD) band formed in a heavily Mg-doped GaN contact layer on the performance of Ni/Au contact to p-GaN is investigated. The thin heavily Mg-doped GaN (p ++ -GaN) contact layer with DLD band can effectively improve the performance of Ni/Au ohmic contact to p-GaN. The temperature-dependent I–V measurement shows that the variable-range hopping (VRH) transportation through the DLD band plays a dominant role in the ohmic contact. The thickness and Mg/Ga flow ratio of p ++ -GaN contact layer have a significant effect on ohmic contact by controlling the Mg impurity doping and the formation of a proper DLD band. When the thickness of the p ++ -GaN contact layer is 25 nm thick and the Mg/Ga flow rate ratio is 10.29%, an ohmic contact with low specific contact resistivity of 6.97× 10 −4 Ω·cm 2 is achieved. (paper)

  7. First-principles study on band structures and electrical transports of doped-SnTe

    Directory of Open Access Journals (Sweden)

    Xiao Dong

    2016-06-01

    Full Text Available Tin telluride is a thermoelectric material that enables the conversion of thermal energy to electricity. SnTe demonstrates a great potential for large-scale applications due to its lead-free nature and the similar crystal structure to PbTe. In this paper, the effect of dopants (i.e., Mg, Ca, Sr, Ba, Eu, Yb, Zn, Cd, Hg, and In on the band structures and electrical transport properties of SnTe was investigated based on the first-principles density functional theory including spin–orbit coupling. The results show that Zn and Cd have a dominant effect of band convergence, leading to power factor enhancement. Indium induces obvious resonant states, while Hg-doped SnTe exhibits a different behavior with defect states locating slightly above the Fermi level.

  8. Nitrogen-Doped Graphene/Platinum Counter Electrodes for Dye-Sensitized Solar Cells

    KAUST Repository

    Lin, Chinan

    2014-12-17

    Nitrogen-doped graphene (NGR) was utilized in dye-sensitized solar cells for energy harvesting. NGR on a Pt-sputtered fluorine-doped tin oxide substrate (NGR/Pt/FTO) as counter electrodes (CEs) achieves the high efficiency of 9.38% via the nitrogen doping into graphene. This is due to (i) the hole-cascading transport at the interface of electrolyte/CEs via controlling the valence band maximum of NGR located between the redox potential of the I-/I- redox couple and the Fermi level of Pt by nitrogen doping, (ii) the extended electron transfer surface effect provided by large-surface-area NGR, (iii) the high charge transfer efficiency due to superior catalytic characteristics of NGR via nitrogen doping, and (iv) the superior light-reflection effect of NGR/Pt/FTO CEs, facilitating the electron transfer from CEs to I3 - ions of the electrolyte and light absorption of dye. The result demonstrated that the NGR/Pt hybrid structure is promising in the catalysis field. (Chemical Presented). © 2014 American Chemical Society.

  9. Carbon-doped SnS2 nanostructure as a high-efficiency solar fuel catalyst under visible light.

    Science.gov (United States)

    Shown, Indrajit; Samireddi, Satyanarayana; Chang, Yu-Chung; Putikam, Raghunath; Chang, Po-Han; Sabbah, Amr; Fu, Fang-Yu; Chen, Wei-Fu; Wu, Chih-I; Yu, Tsyr-Yan; Chung, Po-Wen; Lin, M C; Chen, Li-Chyong; Chen, Kuei-Hsien

    2018-01-12

    Photocatalytic formation of hydrocarbons using solar energy via artificial photosynthesis is a highly desirable renewable-energy source for replacing conventional fossil fuels. Using an L-cysteine-based hydrothermal process, here we synthesize a carbon-doped SnS 2 (SnS 2 -C) metal dichalcogenide nanostructure, which exhibits a highly active and selective photocatalytic conversion of CO 2 to hydrocarbons under visible-light. The interstitial carbon doping induced microstrain in the SnS 2 lattice, resulting in different photophysical properties as compared with undoped SnS 2 . This SnS 2 -C photocatalyst significantly enhances the CO 2 reduction activity under visible light, attaining a photochemical quantum efficiency of above 0.7%. The SnS 2 -C photocatalyst represents an important contribution towards high quantum efficiency artificial photosynthesis based on gas phase photocatalytic CO 2 reduction under visible light, where the in situ carbon-doped SnS 2 nanostructure improves the stability and the light harvesting and charge separation efficiency, and significantly enhances the photocatalytic activity.

  10. High-power picosecond pulse delivery through hollow core photonic band gap fibers

    DEFF Research Database (Denmark)

    Michieletto, Mattia; Johansen, Mette Marie; Lyngsø, Jens Kristian

    2016-01-01

    We demonstrated robust and bend insensitive fiber delivery of high power laser with diffraction limited beam quality for two different kinds of hollow core band gap fibers. The light source for this experiment consists of ytterbium-doped double clad fiber aeroGAIN-ROD-PM85 in a high power amplifier...

  11. Visible and infrared photoluminescence from Er-doped SiOx

    International Nuclear Information System (INIS)

    Wan, J.; Sheng, C.; Lu, F.; Yuan, S.; Gong, D.W.; Liao, L.S.; Fang, Y.L.; Lin, F.; Wang, X.

    1998-01-01

    The annealing behaviors of photoluminescence of SiO x and Er-doped SiO x grown by molecular beam epitaxy in the wavelength range of visible and infrared light are studied. For SiO x , four PL bands located at 510, 600, 716 and 810 nm, respectively, are observed. For Er-doped SiO x , the 716 nm band, which is believed to be originated from the electron-hole recombination at the interface between crystalline Si and amorphous SiO 2 , disappears in the annealing temperature range of 500-900C. It is suggested the enhancement of Er luminescence is partially due to the energy transfer from the recombination at the interface between crystalline Si and SiO 2 to Er ions. (Copyright (c) 1998 Elsevier Science B.V., Amsterdam. All rights reserved.)

  12. Generation of three wide frequency bands within a single white-light cavity

    Science.gov (United States)

    Othman, Anas; Yevick, David; Al-Amri, M.

    2018-04-01

    We theoretically investigate the double-Λ scheme inside a Fabry-Pérot cavity employing a weak probe beam and two strong driving fields together with an incoherent pumping mechanism. By generating analytical expressions for the susceptibility and applying the white-light cavity conditions, we devise a procedure that reaches the white-light condition at a smaller gas density than the values typically cited in similar previous studies. Further, when the intensities of the two driving fields are equal, a single giant white band is obtained, while for unequal driving fields three white bands can be present in the cavity. Two additional techniques are then advanced for generating three white bands and a method is described for displacing the center frequency of the bands. Finally, some potential applications are suggested.

  13. Enhanced visible light photocatalytic properties of Fe-doped TiO2 nanorod clusters and monodispersed nanoparticles

    International Nuclear Information System (INIS)

    Liu, Y.; Wei, J.H.; Xiong, R.; Pan, C.X.; Shi, J.

    2011-01-01

    In order to get photocatalysts with desired morphologies and enhanced visible light responses, the Fe-doped TiO 2 nanorod clusters and monodispersed nanoparticles were prepared by modified hydrothermal and solvothermal method, respectively. The microstructures and morphologies of TiO 2 crystals can be controlled by restraining the hydrolytic reaction rates. The Fe-doped photocatalysts were characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM), X-ray photoelectron spectroscopy (XPS), UV-vis absorption spectroscopy (UV-vis), N 2 adsorption-desorption measurement (BET), and photoluminescence spectroscopy (PL). The refinements of the microstructures and morphologies result in the enhancement of the specific surface areas. The Fe 3+ -dopants in TiO 2 lattices not only lead to the significantly extending of the optical responses from UV to visible region but also diminish the recombination rates of the electrons and holes. The photocatalytic activities were evaluated by photocatalytic decomposition of formaldehyde in air under visible light illumination. Compared with P25 (TiO 2 ) and N-doped TiO 2 nanoparticles, the Fe-doped photocatalysts show high photocatalytic activities under visible light.

  14. Multi-band transmission color filters for multi-color white LEDs based visible light communication

    Science.gov (United States)

    Wang, Qixia; Zhu, Zhendong; Gu, Huarong; Chen, Mengzhu; Tan, Qiaofeng

    2017-11-01

    Light-emitting diodes (LEDs) based visible light communication (VLC) can provide license-free bands, high data rates, and high security levels, which is a promising technique that will be extensively applied in future. Multi-band transmission color filters with enough peak transmittance and suitable bandwidth play a pivotal role for boosting signal-noise-ratio in VLC systems. In this paper, multi-band transmission color filters with bandwidth of dozens nanometers are designed by a simple analytical method. Experiment results of one-dimensional (1D) and two-dimensional (2D) tri-band color filters demonstrate the effectiveness of the multi-band transmission color filters and the corresponding analytical method.

  15. Dy:Eu doped CaBAl glasses for white light applications

    Science.gov (United States)

    Lodi, T. A.; Sandrini, M.; Medina, A. N.; Barboza, M. J.; Pedrochi, F.; Steimacher, A.

    2018-02-01

    The combination of Eu3+ and Dy3+ in co-doped glassy materials provides interesting applicability for white light emission devices. In this work, Dy:Eu doped Calcium Boroaluminate (CaBAl) glasses were prepared by conventional melting quenching, with 3 wt% of Dy2O3 and Eu2O3 content varying from 0 to 3 wt%, and results of absorption spectra, photoluminescence and photoluminescence lifetime are discussed in terms of Eu2O3 content. The photoluminescence of the samples was studied under excitation of 365 and 405 nm light source. The 365 nm excitation shows favor to the Dy3+ ion emission. The results of photoluminescence lifetime at 575 nm (Dy3+) shows a decrease due to Eu2O3 addition, which suggests an energy transfer from Dy3+ (donor) to the Eu3+ (acceptor). On the other hand, under excitation of 405 nm, the photoluminescence lifetime at 575 nm (Dy3+) shows no significant changes due to Eu2O3 amount, which indicates that the energy transfer from Dy3+ to Eu3+ (under λexc = 405 nm) is negligible. However, the results of photoluminescence under 405 nm excitation present a white yellowish emission in the CIE diagram, which shifts to red with Eu2O3 addition. The combination of a Blue LED (BL) emission with the emission of the samples was also studied in the CIE diagram, in order to improve light emission and to obtain ideal White Light (WL). The results show that by modifying the emission intensity of BL, it is possible to achieve a route for smart lighting, close to the circadian light cycle.

  16. Fabrication of predominantly Mn4+ -doped TiO2 nanoparticles under equilibrium conditions and their application as visible-light photocatalyts.

    Science.gov (United States)

    Wang, Lijie; Fan, Jiajie; Cao, Zetan; Zheng, Yichao; Yao, Zhiqiang; Shao, Guosheng; Hu, Junhua

    2014-07-01

    The chemical state of a transition-metal dopant in TiO(2) can intrinsically determine the performance of the doped material in applications such as photocatalysis and photovoltaics. In this study, manganese-doped TiO2 is fabricated by a near-equilibrium process, in which the TiO(2) precursor powder precipitates from a hydrothermally obtained transparent mother solution. The doping level and subsequent thermal treatment influence the morphology and crystallization of the TiO(2) samples. FTIR spectroscopy and X-ray photoelectron spectroscopy analyses indicate that the manganese dopant is substitutionally incorporated by replacing Ti(4+) cations. The absorption band edge can be gradually shifted to 1.8 eV by increasing the nominal manganese content to 10 at %. Manganese atoms doped into the titanium lattice are associated with the dominant 4+ valence oxidation state, which introduces two curved, intermediate bands within the band gap and results in a significant enhancement in photoabsorption and the quantity of photogenerated hydroxyl radicals. Additionally, the high photocatalytic performance of manganese-doped TiO(2) is also attributed to the low oxygen content, owing to the equilibrium fabrication conditions. This work provides an important strategy to control the chemical and defect states of dopants by using an equilibrium fabrication process. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  17. Synthesis and Photocatalytic Activity of Mo-Doped TiO2 Nanoparticles

    Directory of Open Access Journals (Sweden)

    Ji-guo Huang

    2015-01-01

    Full Text Available The undoped and Mo-doped TiO2 nanoparticles were synthesized by sol-gel method. The as-prepared samples were characterized by X-ray diffraction (XRD, diffuse reflectance UV-visible absorption spectra (UV-vis DRS, X-ray photoelectron spectra (XPS, and transmission electron microscopy (TEM. The photocatalytic activity was evaluated by photocatalytic degradation of methylene blue under irradiation of a 500 W xenon lamp and natural solar light outdoor. Effects of calcination temperatures and Mo doping amounts on crystal phase, crystallite size, lattice distortion, and optical properties were investigated. The results showed that most of Mo6+ took the place of Ti4+ in the crystal lattice of TiO2, which inhibited the growth of crystallite size, suppressed the transformation from anatase to rutile, and led to lattice distortion of TiO2. Mo doping narrowed the band gap (from 3.05 eV of TiO2 to 2.73 eV of TiMo0.02O and efficiently increased the optical absorption in visible region. Mo doping was shown to be an efficient method for degradation of methylene blue under visible light, especially under solar light. When the calcination temperature was 550°C and the Mo doping amount was 2.0%, the Mo-doped TiO2 sample exhibited the highest photocatalytic activity.

  18. Band gap tuning and fluorescence properties of lead sulfide Pb0.9A0.1S (A: Fe, Co, and Ni) nanoparticles by transition metal doping

    Science.gov (United States)

    Parveen, Azra; Agrawal, Shraddha; Azam, Ameer

    2018-02-01

    Transition metal-doped lead sulfide nanoparticles (PbS-NPs) were synthesized by co-precipitation method. The crystallite phase and morphological studies were carried out by X-ray diffraction (XRD) and transmission electron microscopy (TEM). Optical studies were performed by UV-Visible absorption, fluorescence emission spectroscopy and Fourier transforms infrared spectroscopy (FTIR). XRD analysis reveals that the pure and transition metal-doped PbS- NPs have a single crystalline phase with cubic structure devoided of any other secondary phase. The notable effect on optical absorbance and band gap was observed with transition metal doping in lead sulphide. The optical energy band gap values were found to increase with the doping of transition metal. UV-Visible absorption and fluorescence emission spectra display a blue shift with subsequent transition metal doping which may arise due to quantum confinement effect making it worth for having applications in optoelectronic devices.

  19. Computational Design of Flat-Band Material

    Science.gov (United States)

    Hase, I.; Yanagisawa, T.; Kawashima, K.

    2018-02-01

    Quantum mechanics states that hopping integral between local orbitals makes the energy band dispersive. However, in some special cases, there are bands with no dispersion due to quantum interference. These bands are called as flat band. Many models having flat band have been proposed, and many interesting physical properties are predicted. However, no real compound having flat band has been found yet despite the 25 years of vigorous researches. We have found that some pyrochlore oxides have quasi-flat band just below the Fermi level by first principles calculation. Moreover, their valence bands are well described by a tight-binding model of pyrochlore lattice with isotropic nearest neighbor hopping integral. This model belongs to a class of Mielke model, whose ground state is known to be ferromagnetic with appropriate carrier doping and on-site repulsive Coulomb interaction. We have also performed a spin-polarized band calculation for the hole-doped system from first principles and found that the ground state is ferromagnetic for some doping region. Interestingly, these compounds do not include magnetic element, such as transition metal and rare-earth elements.

  20. Characterization and photocatalytic performance evaluation of various metal ion-doped microstructured TiO2 under UV and visible light.

    Science.gov (United States)

    Sahoo, Chittaranjan; Gupta, Ashok K

    2015-01-01

    Commercially available microcrystalline TiO2 was doped with silver, ferrous and ferric ion (1.0 mol %) using silver nitrate, ferrous sulfate and ferric nitrate solutions following the liquid impregnation technology. The catalysts prepared were characterised by FESEM, XRD, FTIR, DRS, particle size and micropore analysis. The photocatalytic activity of the prepared catalysts was tested on the degradation of two model dyes, methylene blue (3,7-bis (Dimethylamino)-phenothiazin-5-ium chloride, a cationic thiazine dye) and methyl blue (disodium;4-[4-[[4-(4-sulfonatoanilino)phenyl]-[4-(4-sulfonatophenyl)azaniumylidenecyclohexa-2,5-dien-1-ylidene]methyl]anilino]benzene sulfonate, an anionic triphenyl methane dye) under irradiation by UV and visible light in a batch reactor. The efficiency of the photocatalysts under UV and visible light was compared to ascertain the light range for effective utilization. The catalysts were found to have the anatase crystalline structure and their particle size is in a range of 140-250 nm. In the case of Fe(2+) doped TiO2 and Fe(3+) doped TiO2, there was a greater shift in the optical absorption towards the visible range. Under UV light, Ag(+) doped TiO2 was the most efficient catalyst and the corresponding decolorization was more than 99% for both the dyes. Under visible light, Fe(3+) doped TiO2 was the most efficient photocatalyst with more than 96% and 90% decolorization for methylene blue and methyl blue, respectively. The kinetics of the reaction under both UV and visible light was investigated using the Langmuir-Hinshelwood pseudo-first-order kinetic model. Kinetic measurements confirmed that, Ag(+) doped TiO2 was most efficient in the UV range, while Fe(3+) doped TiO2 was most efficient in the visible range.

  1. Band gap tuning of ZnO nanoparticles via Mg doping by femtosecond laser ablation in liquid environment

    International Nuclear Information System (INIS)

    Chelnokov, E.; Rivoal, M.; Colignon, Y.; Gachet, D.; Bekere, L.; Thibaudau, F.; Giorgio, S.; Khodorkovsky, V.; Marine, W.

    2012-01-01

    Highlights: ► Femtosecond laser ablation synthesis of Mg doped ZnO nanoparticles. ► Electronic properties of ZnO are modified by Mg. ► Band gap and exciton energy shifts to the blue. ► The exciton energy shift is saturated at Mg content of about 20%. ► Phase separation at Mg content is at more than 25%. ► Mechanism of exciton pinning – recombination via new surface states. - Abstract: We use multiphoton IR femtosecond laser ablation to induce non-thermal non-equilibrium conditions of the nanoparticle growth in liquids. Modifications of the electronic properties of ZnO NP were achieved by Mg ion doping of targets prepared from mixtures of Zn and Mg acetylacetonates. The nanoparticle sizes were 3–20 nm depending on the ablation conditions. X-ray fluorescence indicates that stoichiometric ablation and incorporation of Mg in nanocrystalline ZnO occurs. HRTEM observations show that nanoparticles retain their wurtzite structure, while at high Mg concentrations we detect the MgO rich domains. Exciton emissions exhibit relatively narrow bands with progressive and controlled blue shifts up to 184 meV. The exciton energy correlates to band edge absorption indicating strong modification of the NP band gaps. Stabilisation of the exciton blue shift is observed at high Mg concentration. It is accompanied by the formation of structure defects and ZnO/MgO phase separation within the nanoparticles.

  2. Enhanced photocatalytic activity of cadmium-doped Bi{sub 2}WO{sub 6} nanoparticles under simulated solar light

    Energy Technology Data Exchange (ETDEWEB)

    Song, Xu Chun, E-mail: songxuchunfj@163.com; Li, Wen Ting [Fujian Normal University, Department of Chemistry (China); Huang, Wan Zhen; Zhou, Huan [Zhejiang University of Technology, Research Center of Analysis and Measurement (China); Yin, Hao Yong [Hangzhou Dianzi University, Institute of Environmental Science and Engineering (China); Zheng, Yi Fan [Zhejiang University of Technology, Research Center of Analysis and Measurement (China)

    2015-03-15

    Novel cadmium-doped Bi{sub 2}WO{sub 6} nanoparticles with different Cd contents have been synthesized by a one-step route using ethylene glycol and water as solvents at 180 °C for 12 h. The as-synthesized samples were characterized in detailed by SEM, XRD, EDS, HRTEM, UV–Vis DRS, BET techniques, and so on. The results shown that with the increase of the Cd{sup 2+} addition, the crystal structure, lattice space, and absorption edge were not significantly changed and the calculated band gap value was 2.58 eV. However, the flower-like Bi{sub 2}WO{sub 6} sphere was gradually destroyed. Simultaneously, the surface area and photocurrent responses of the catalysts were greatly increased. Photocatalytic activity of the Cd-doped Bi{sub 2}WO{sub 6} samples was determined by monitoring the change of RhB concentration under simulated solar light. The results revealed that cadmium doping greatly improved the photocatalytic efficiency of Bi{sub 2}WO{sub 6}. The Bi{sub 2}WO{sub 6} sample with R{sub Cd} = 0.05 displayed the highest photocatalytic activity, and the degradation rate is about two times greater than pure Bi{sub 2}WO{sub 6}. Moreover, the Cd–Bi{sub 2}WO{sub 6} photocatalyst remained stable even after five consecutive cycles. A possible mechanism of photocatalytic activity enhancement on basis of the experimental results was proposed.

  3. The thickness design of unintentionally doped GaN interlayer matched with background doping level for InGaN-based laser diodes

    Energy Technology Data Exchange (ETDEWEB)

    Chen, P.; Zhao, D. G., E-mail: dgzhao@red.semi.ac.cn; Jiang, D. S.; Zhu, J. J.; Liu, Z. S.; Yang, J.; Li, X.; Le, L. C.; He, X. G.; Liu, W.; Li, X. J.; Liang, F. [State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China); Zhang, B. S.; Yang, H. [Key Laboratory of Nano-devices and Applications of CAS, Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123 (China); Zhang, Y. T.; Du, G. T. [State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130023 (China)

    2016-03-15

    In order to reduce the internal optical loss of InGaN laser diodes, an unintentionally doped GaN (u-GaN) interlayer is inserted between InGaN/GaN multiple quantum well active region and Al{sub 0.2}Ga{sub 0.8}N electron blocking layer. The thickness design of u-GaN interlayer matching up with background doping level for improving laser performance is studied. It is found that a suitably chosen u-GaN interlayer can well modulate the optical absorption loss and optical confinement factor. However, if the value of background doping concentration of u-GaN interlayer is too large, the output light power may decrease. The analysis of energy band diagram of a LD structure with 100 nm u-GaN interlayer shows that the width of n-side depletion region decreases when the background concentration increases, and may become even too small to cover whole MQW, resulting in a serious decrease of the output light power. It means that a suitable interlayer thickness design matching with the background doping level of u-GaN interlayer is significant for InGaN-based laser diodes.

  4. The thickness design of unintentionally doped GaN interlayer matched with background doping level for InGaN-based laser diodes

    Directory of Open Access Journals (Sweden)

    P. Chen

    2016-03-01

    Full Text Available In order to reduce the internal optical loss of InGaN laser diodes, an unintentionally doped GaN (u-GaN interlayer is inserted between InGaN/GaN multiple quantum well active region and Al0.2Ga0.8N electron blocking layer. The thickness design of u-GaN interlayer matching up with background doping level for improving laser performance is studied. It is found that a suitably chosen u-GaN interlayer can well modulate the optical absorption loss and optical confinement factor. However, if the value of background doping concentration of u-GaN interlayer is too large, the output light power may decrease. The analysis of energy band diagram of a LD structure with 100 nm u-GaN interlayer shows that the width of n-side depletion region decreases when the background concentration increases, and may become even too small to cover whole MQW, resulting in a serious decrease of the output light power. It means that a suitable interlayer thickness design matching with the background doping level of u-GaN interlayer is significant for InGaN-based laser diodes.

  5. White emission materials from glass doped with rare Earth ions: A review

    Energy Technology Data Exchange (ETDEWEB)

    Yasaka, P.; Kaewkhao, J., E-mail: mink110@hotmail.com [Center of Excellence in Glass Technology and Materials Science (CEGM), Nakhon Pathom Rajabhat University, Nakhon Pathom 73000 (Thailand); Physics Program, Faculty of Science and Technology, Nakhon Pathom Rajabhat University, 73000 (Thailand)

    2016-03-11

    Solid State Lighting (SSL) based devices are predicted to play a crucial role in the coming years. Development of W-LED, which have an edge over traditional lighting sources due to their compact size, higher reliability, shock resistance, interesting design possibilities, higher transparency and an extremely long lifetime. Over the fifteen trivalent lanthanide ions, Dy{sup 3+} ions doped glasses are most appropriate for white light generation because of the fact that it exhibits two intense emission bands corresponds to the {sup 4}F{sub 9/2}→{sup 6}H{sub 15/2} (magnetic dipole) and {sup 4}F{sub 9/2}→{sup 6}H{sub 13/2} (electric dipole) transitions at around 480-500 nm and 580-600 nm pertaining to blue and yellow regions respectively. In this work, the developments of Dy3+ doped in several glass structures for white emitting materials application have reviewed. Properties of Dy{sup 3+} doped in glasses were discussed for use as a solid state lighting materials application.

  6. Cathodoluminescence studies of anomalous ion implantation defect introduction in lightly and heavily doped liquid phase epitaxial GaAs:Sn

    International Nuclear Information System (INIS)

    Norris, C.B.; Barnes, C.E.

    1980-01-01

    The anomalous postrange defect introduction produced by shallow ion implantation in GaAs has been investigated in Sn-doped liquid phase epitaxial (LPE) material using depth-resolved cathodoluminescence in conjunction with layer removal by chemical etching. 100-keV Ne + or 200-keV Zn + ions were implanted into lightly or heavily Sn-doped LPE layers at temperatures between 80 and 300 K. All implantations were subsequently annealed at 300 K. Although the projected ion ranges for the implants were on the order of 1000 A, significant postrange damage was observed at far greater depths. At depths up to several microns, the damage introduction produced severe nonradiative recombination but simultaneously caused an apparent increase in the concentration of incumbent luminescence centers responsible for an extrinsic band near 1.39 eV. A weak damage-related band near 1.2 eV could also be seen in one instance. At depths of 5--30 μm, the postrange damage had the opposite effect of annihilating incumbent 1.39-eV luminescence centers. The efficiency of the damage introduction has a complicated temperature dependence which is significantly different for the ion/substrate combinations investigated. However, no conditions were found for which the damage introduction could be inhibited. While our measurements are the most extensive to date concerning the anomalous ion implant damage introduction in GaAs, the detailed mechanisms responsible for this effect still remain obscure owing in part to the limited understanding of defects in GaAs

  7. Band structure of TiO sub 2 -doped yttria-stabilized zirconia probed by soft-x-ray spectroscopy

    CERN Document Server

    Higuchi, T; Kobayashi, K; Yamaguchi, S; Fukushima, A; Shin, S

    2003-01-01

    The electronic structure of TiO sub 2 -doped yttria-stabilized zirconia (YSZ) has been studied by soft-X-ray emission spectroscopy (SXES) and X-ray absorption spectroscopy (XAS). The valence band is mainly composed of the O 2p state. The O 1s XAS spectrum exhibits the existence of the Ti 3d unoccupied state under the Zr 4d conduction band. The intensity of the Ti 3d unoccupied state increases with increasing TiO sub 2 concentration. The energy separation between the top of the valence band and the bottom of the Ti 3d unoccupied state is in accord with the energy gap, as expected from dc-polarization and total conductivity measurements. (author)

  8. A comparison study of rhodamine B photodegradation over nitrogen-doped lamellar niobic acid and titanic acid under visible-light irradiation.

    Science.gov (United States)

    Li, Xiukai; Kikugawa, Naoki; Ye, Jinhua

    2009-01-01

    A solid-state reaction method with urea as a nitrogen precursor was used to prepare nitrogen-doped lamellar niobic and titanic solid acids (i.e., HNb(3)O(8) and H(2)Ti(4)O(9)) with different acidities for visible-light photocatalysis. The photocatalytic activities of the nitrogen-doped solid acids were evaluated for rhodamine B (RhB) degradation and the results were compared with those obtained over the corresponding nitrogen-doped potassium salts. Techniques such as XRD, BET, SEM, X-ray photoelectron spectroscopy, and UV-visible diffuse reflectance spectroscopy were adopted to explore the nature of the materials as well as the characteristics of the doped nitrogen species. It was found that the intercalation of the urea precursor helped to stabilize the layered structures of both lamellar solid acids and enabled easier nitrogen doping. The effects of urea intercalation were more significant for the more acidic HNb(3)O(8) sample than for the less acidic H(2)Ti(4)O(9). Compared with the nitrogen-doped KNb(3)O(8) and K(2)Ti(4)O(9) samples, the nitrogen-doped HNb(3)O(8) and H(2)Ti(4)O(9) solid acids absorb more visible light and exhibit a superior activity for RhB photodegradation under visible-light irradiation. The nitrogen-doped HNb(3)O(8) sample performed the best among all the samples. The results of the current study suggest that the protonic acidity of the lamellar solid-acid sample is a key factor that influences nitrogen doping and the resultant visible-light photocatalysis.

  9. Effectiveness of dye sensitised solar cell under low light condition using wide band dye

    Energy Technology Data Exchange (ETDEWEB)

    Sahmer, Ahmad Zahrin, E-mail: ahmadzsahmer@gmail.com; Mohamed, Norani Muti, E-mail: noranimuti-mohamed@petronas.com.my; Zaine, Siti Nur Azella, E-mail: ct.azella@gmail.com [Universiti Teknologi PETRONAS, Bandar Seri Iskandar, 31750 Tronoh, Perak (Malaysia)

    2015-07-22

    Dye sensistised solar cell (DSC) based on nanocrystalline TiO{sub 2} has the potential to be used in indoor consumer power application. In realizing this, the DSC must be optimized to generate power under low lighting condition and under wider visible light range. The use of wide band dye N749 which has a wider spectrum sensitivity increases the photon conversion to electron between the visible light spectrums of 390nm to 700nm. This paper reports the study on the effectiveness of the dye solar cell with N749 dye under low light condition in generating usable power which can be used for indoor consumer application. The DSC was fabricated using fluorine doped tin oxide (FTO) glass with screen printing method and the deposited TiO{sub 2} film was sintered at 500°C. The TiO{sub 2} coated FTO glass was then soaked in the N749 dye, assembled into test cell, and tested under the standard test condition at irradiance of 1000 W/m{sup 2} with AM1.5 solar soaker. The use of the 43T mesh for the dual pass screen printing TiO{sub 2} paste gives a uniform TiO{sub 2} film layer of 16 µm. The low light condition was simulated using 1/3 filtered irradiance with the solar soaker. The fabricated DSC test cell with the N749 dye was found to have a higher efficiency of 6.491% under low light condition compared to the N719 dye. Under the standard test condition at 1 sun the N749 test cell efficiency is 4.55%. The increases in efficiency is attributed to the wider spectral capture of photon of the DSC with N749 dye. Furthermore, the use of N749 dye is more effective under low light condition as the V{sub OC} decrement is less significant compared to the latter.

  10. Photocatalytic degradation of methylene blue on Fe3+-doped TiO2 nanoparticles under visible light irradiation

    Institute of Scientific and Technical Information of China (English)

    SU Bitao; WANG Ke; BAI Jie; MU Hongmei; TONG Yongchun; MIN Shixiong; SHE Shixiong; LEI Ziqiang

    2007-01-01

    Fe3+-doped TiO2 composite nanoparticles with different doping amounts were successfully synthesized using sol-gel method and characterized by X-ray diffraction (XRD),transmission electron microscopy (TEM) and ultraviolet-visible spectroscopy (UV-Vis) diffuse reflectance spectra (DRS). The photocatalytic degradation of methylene blue was used as a model reaction to evaluate the photocatalytic activity of Fe3+/TiO2 nanoparticles under visible light irradia-tion. The influence of doping amount of Fe3+ (ω: 0.00%-3.00%) on photocatalytic activities of TiO2 was investigated.Results show that the size of Fe3+/TiO2 particles decreases with the increase of the amount of Fe3+ and their absorptionspectra are broaden and absorption intensities are also increased. Doping Fe3+ can control the conversion of TiO2 from anatase to rutile. The doping amount of Fe3+ remarkably affects the activity of the catalyst, and the optimum efficiency occurs at about the doping amount of 0.3%. The appropriate doping of Fe3+ can markedly increase the catalytic activity of TiO2 under visible light irradiation.

  11. Effect of doping (C or N) and co-doping (C+N) on the photoactive properties of magnetron sputtered titania coatings for the application of solar water-splitting.

    Science.gov (United States)

    Rahman, M; Dang, B H Q; McDonnell, K; MacElroy, J M D; Dowling, D P

    2012-06-01

    The photocatalytic splitting of water into hydrogen and oxygen using a photoelectrochemical (PEC) cell containing titanium dioxide (TiO2) photoanode is a potentially renewable source of chemical fuels. However, the size of the band gap (-3.2 eV) of the TiO2 photocatalyst leads to its relatively low photoactivity toward visible light in a PEC cell. The development of materials with smaller band gaps of approximately 2.4 eV is therefore necessary to operate PEC cells efficiently. This study investigates the effect of dopant (C or N) and co-dopant (C+N) on the physical, structural and photoactivity of TiO2 nano thick coating. TiO2 nano-thick coatings were deposited using a closed field DC reactive magnetron sputtering technique, from titanium target in argon plasma with trace addition of oxygen. In order to study the influence of doping such as C, N and C+N inclusions in the TiO2 coatings, trace levels of CO2 or N2 or CO2+N2 gas were introduced into the deposition chamber respectively. The properties of the deposited nano-coatings were determined using Spectroscopic Ellipsometry, SEM, AFM, Optical profilometry, XPS, Raman, X-ray diffraction UV-Vis spectroscopy and tri-electrode potentiostat measurements. Coating growth rate, structure, surface morphology and roughness were found to be significantly influenced by the types and amount of doping. Substitutional type of doping in all doped sample were confirmed by XPS. UV-vis measurement confirmed that doping (especially for C doped sample) facilitate photoactivity of sputtered deposited titania coating toward visible light by reducing bandgap. The photocurrent density (indirect indication of water splitting performance) of the C-doped photoanode was approximately 26% higher in comparison with un-doped photoanode. However, coating doped with nitrogen (N or N+C) does not exhibit good performance in the photoelectrochemical cell due to their higher charge recombination properties.

  12. Characterization and improved solar light activity of vanadium doped TiO2/diatomite hybrid catalysts

    International Nuclear Information System (INIS)

    Wang, Bin; Zhang, Guangxin; Leng, Xue; Sun, Zhiming; Zheng, Shuilin

    2015-01-01

    Highlights: • V-doped TiO 2 /diatomite composite photocatalyst was synthesized. • The physiochemical property and solar light photoactivity were characterized. • The presence and influence of V ions in TiO 2 matrix was systematically analyzed. • The photocatalysis for Rhodamine B were studied under solar light illumination. - Abstract: V-doped TiO 2 /diatomite composite photocatalysts with different vanadium concentrations were synthesized by a modified sol–gel method. The diatomite was responsible for the well dispersion of TiO 2 nanoparticles on the matrix and consequently inhibited the agglomeration. V-TiO 2 /diatomite hybrids showed red shift in TiO 2 absorption edge with enhanced absorption intensity. Most importantly, the dopant energy levels were formed in the TiO 2 bandgap due to V 4+ ions substituted to Ti 4+ sites. The 0.5% V-TiO 2 /diatomite photocatalyst displayed narrower bandgap (2.95 eV) compared to undoped sample (3.13 eV) and other doped samples (3.05 eV) with higher doping concentration. The photocatalytic activities of V doped TiO 2 /diatomite samples for the degradation of Rhodamine B under stimulated solar light illumination were significantly improved compared with the undoped sample. In our case, V 4+ ions incorporated in TiO 2 lattice were responsible for increased visible-light absorption and electron transfer to oxygen molecules adsorbed on the surface of TiO 2 to produce superoxide radicals ·O 2 – , while V 5+ species presented on the surface of TiO 2 particles in the form of V 2 O 5 contributed to e – –h + separation. In addition, due to the combination of diatomite as support, this hybrid photocatalyst could be separated from solution quickly by natural settlement and exhibited good reusability

  13. Enhanced performance of an S-band fiber laser using a thulium-doped photonic crystal fiber

    Science.gov (United States)

    Muhammad, A. R.; Emami, S. D.; Hmood, J. K.; Sayar, K.; Penny, R.; Abdul-Rashid, H. A.; Ahmad, H.; Harun, S. W.

    2014-11-01

    This work proposes a new method to enhance the performance of an S-band fiber laser by using a thulium-doped photonic crystal fiber (PCF). The proposed method is based on amplified spontaneous emission (ASE) suppression provided by the thulium-doped PCF unique geometric structure. The enhanced performance of this filter based PCF is dependent on the short and long cut-off wavelength characteristics that define the fiber transmission window. Realizing the short wavelength cut-off location requires the PCF cladding to be doped with a high index material, which provides a refractive index difference between the core and cladding region. Achieving the long cut-off wavelength necessitates enlarging the size of the air holes surrounding the rare-earth doped core region. The PCF structure is optimized so as to achieve the desired ASE suppression regions of below 0.8 μm and above 1.8 μm. The laser performance is simulated for different host media, namely pure silica, alumino-silicate, and fluoride-based fiber ZBLAN based on this thulium-doped PCF design. The host media spectroscopic details, including lifetime variations and quantum efficiency effect on the lasing emission are also discussed. Information on the filter based PCF design is gathered via a full-vectorial finite element method analysis and specifically a numerical modelling solution for the energy level rate equation using the Runge-Kutta method. Results are analyzed for gain improvement, lasing cavity, laser efficiency and effect of core size diameter variation. Results are compared with conventional thulium-doped fiber and thulium-doped PCF for every single host media. We observe that the ZBLAN host media is the most promising candidate due to its greater quantum efficiency.

  14. Enhanced performance of an S-band fiber laser using a thulium-doped photonic crystal fiber

    International Nuclear Information System (INIS)

    Muhammad, A R; Emami, S D; Penny, R; Ahmad, H; Harun, S W; Hmood, J K; Sayar, K; Abdul-Rashid, H A

    2014-01-01

    This work proposes a new method to enhance the performance of an S-band fiber laser by using a thulium-doped photonic crystal fiber (PCF). The proposed method is based on amplified spontaneous emission (ASE) suppression provided by the thulium-doped PCF unique geometric structure. The enhanced performance of this filter based PCF is dependent on the short and long cut-off wavelength characteristics that define the fiber transmission window. Realizing the short wavelength cut-off location requires the PCF cladding to be doped with a high index material, which provides a refractive index difference between the core and cladding region. Achieving the long cut-off wavelength necessitates enlarging the size of the air holes surrounding the rare-earth doped core region. The PCF structure is optimized so as to achieve the desired ASE suppression regions of below 0.8 μm and above 1.8 μm. The laser performance is simulated for different host media, namely pure silica, alumino-silicate, and fluoride-based fiber ZBLAN based on this thulium-doped PCF design. The host media spectroscopic details, including lifetime variations and quantum efficiency effect on the lasing emission are also discussed. Information on the filter based PCF design is gathered via a full-vectorial finite element method analysis and specifically a numerical modelling solution for the energy level rate equation using the Runge–Kutta method. Results are analyzed for gain improvement, lasing cavity, laser efficiency and effect of core size diameter variation. Results are compared with conventional thulium-doped fiber and thulium-doped PCF for every single host media. We observe that the ZBLAN host media is the most promising candidate due to its greater quantum efficiency. (paper)

  15. Photocatalytic and magnetic properties of anatase doped with V.theoretical study swig DFT

    International Nuclear Information System (INIS)

    Cabeza, Gabriela F; Castellani, Norberto J

    2008-01-01

    The electronic properties and the presence of ferromagnetism in TiO 2 (anatase) doped with vanadium are investigated using calculations of first principles based on the theory of functional density. This work has a double purpose. First, to establish a relationship between the chemical nature of the doping element and the catalytic properties of the volume. Many studies state that anatase is an excellent photocatalytic semiconductor with possible applications in environmental purification and in the photodegradation of organic components. Anatase has a band width of ∼ 3eV, which can be excited only in the presence of ultraviolet light. Doping with transition metals will reduce this and facilitate excitation with visible light. Second, the effect of doping with V on the presence of magnetism in the substrate is clarified. The magnetic moment for an atom isolated from V is known to be 3 mB, while a volume of V is paramagnetic. Studies show that anatase doped with V displays ferromagnetism at room temperature, converting it into a potential diluted magnetic semiconductor (DMS) that may be used in spintronic instruments. The results obtained show that the presence of V produces a narrowing of 27% in the width of the gap favoring the adsorption at greater wave longitudes. Based on an analysis of the states density, the Fermi level does not cross any state indicating that it is an insulant. There are 3d states of the V located in the band width. The spin-up states are next to the Fermi level and the spin-down states are close to the conduction band. The imbalance between both states implies the presence of ferromagnetism. The magnetic moment found is ∼ 1 mB according to the experimental results obtained from the literature

  16. Analysis of the electronic structures of 3d transition metals doped CuGaS2 based on DFT calculations

    International Nuclear Information System (INIS)

    Zhao Zongyan; Zhou Dacheng; Yi Juan

    2014-01-01

    3d transition metals doped CuGaS 2 are considered as possible absorbing material candidates for intermediated band thin film solar cells. The electronic structure and optical properties of 3d transition metals doped CuGaS 2 are investigated by using density functional theory calculations with the GGA + U method in the present work. The doping with 3d transition metals does not obviously change the crystal structure, band gap, and optical absorption edge of the CuGaS 2 host. However, in the case of CuGa 1−x TM x S 2 (TM = Ti, V, Cr, Fe, and Ni), there is at least one distinct isolated impurity energy level in the band gap, and the optical absorption is enhanced in the ultraviolet-light region. Therefore, these materials are ideal absorber material candidates for intermediated band thin film solar cells. The calculated results are very well consistent with experimental observations, and could better explain them. (semiconductor materials)

  17. Visible-Light-Active Titania Photocatalysts: The Case of N-Doped TiO2s—Properties and Some Fundamental Issues

    Directory of Open Access Journals (Sweden)

    Alexei V. Emeline

    2008-01-01

    Full Text Available This article briefly reviews some factors that have impacted heterogeneous photocatalysis with next generation TiO2 photocatalysts, along with some issues of current debate in the fundamental understanding of the science that underpins the field. Preparative methods and some characteristics features of N-doped TiO2 are presented and described briefly. At variance are experimental results and interpretations of X-ray photoelectron spectra (XPS with regard to assignments of N 1s binding energies in N-doped TiO2 systems. Relative to pristine nominally clean TiO2 with absorption edges at 3.2 eV (anatase and 3.0 eV (rutile, N-doped TiO2s display red-shifted absorption edges into the visible spectral region. Several workers have surmised that the (intrinsic band gap of TiO2 is narrowed by coupling dopant energy states with valence band (VB states, an inference based on DFT computations. With similar DFT computations, others concluded that red-shifted absorption edges originate from the presence of localized intragap dopant states above the upper level of the VB band. Recent analyses of absorption spectral features in the visible region for a large number of doped TiO2 specimens, however, have suggested a common origin owing to the strong similarities of the absorption features, and this regardless of the preparative methods and the nature of the dopants. The next generation of (doped TiO2 photocatalysts should enhance overall process photoefficiencies (in some cases, since doped TiO2s absorb a greater quantity of solar radiation. The fundamental science that underpins heterogeneous photocatalysis with the next generation of photocatalysts is a rich playing field ripe for further exploration.

  18. The electrical properties of a strongly disordered system based on lightly doped germanium compensated by disordered regions

    International Nuclear Information System (INIS)

    Evseev, V.A.; Konopleva, R.F.; Yuferev, A.A.

    1976-01-01

    A study was made of lightly doped (Nsub(Sb) approximately 10 15 cm -3 ) n-Ge, heavily compensated (K = Nsub(A)/N sub(D) approximately 1) by fast neutrons from a reactor. Irradiation is shown to produce, near n-p conversion (annealing has the same effect near p-n conversion), a random relief of electrostatic potential which is caused by the overlap of the space-charge regions surrounding disordered regions (DR). the random potential field results in a spatial 'bending' of the whole band spectrum of germanium, similar to the way it is observed in amorphous semiconductors because of their disorder. Experiments show the conduction in the DR overlap region to be of an activated nature, associated with the ejection of carriers to the corresponding 'percolation' levels. The activation energy of such conduction varies with the degree of compensation. The shift of the Fermi level depends on the degree of compensation here in a much more sensitive way than in the case of compensation by chemical impurities. The properties of Ge obtained by DR overlap and by compensation with chemical impurities are compared. A superlinear I-V characteristic producing the switching effect is observed in strong electric fields (E approximately 10 3 V cm -1 ). A suggestion is made that a study of disordered systems, based on lightly doped germanium which is compensated with DRs produced by high-energy particles, should both help to obtain new information on the parameters of the DRs proper and help to simulate the properties of the amorphous semiconductors. (author)

  19. Probing Photocatalytic Characteristics of Sb-Doped TiO2 under Visible Light Irradiation

    Directory of Open Access Journals (Sweden)

    Lingjing Luo

    2014-01-01

    Full Text Available Sb-doped TiO2 nanoparticle with varied dopant concentrations was synthesized using titanium tetrachloride (TiCl4 and antimony chloride (SbCl3 as the precursors. The properties of Sb-doped TiO2 nanoparticles were characterized by X-ray diffraction (XRD, scanning electron microscope (SEM, fluorescence spectrophotometer, and Uv-vis spectrophotometer. The absorption edge of TiO2 nanoparticles could be extended to visible region after doping with antimony, in contrast to the UV absorption of pure TiO2. The results showed that the photocatalytic activity of Sb-doped TiO2 nanoparticles was much more active than pure TiO2. The 0.1% Sb-doped TiO2 nanoparticles demonstrated the best photocatalytic activity which was better than that of the Degussa P25 under visible light irradiation using terephthalic acid as fluorescent probe. The effects of Sb dopant on the photocatalytic activity and the involved mechanism were extensively investigated in this work as well.

  20. Characterization and mechanism analysis of N doped TiO2 with visible light response and its enhanced visible activity

    International Nuclear Information System (INIS)

    Cheng Xiuwen; Yu Xiujuan; Xing Zipeng

    2012-01-01

    Nitrogen doped TiO 2 nanoparticles were synthesized through a hydrolysis-precipitation process using ammonia water as the doping species. The resulting materials were characterized by XRD, DRS, SPS, XPS and FT-IR. Further, the activity enhanced-mechanism was discussed in detail. XRD results showed that doping with nitrogen could effectively retard the phase transformation of TiO 2 from anatase to rutile and increase the anatase crystallinity. DRS and SPS results indicated that the light absorbance edge of nitrogen doped TiO 2 nanoparticle was obviously red-shifted to visible light region and the separation rates of photogenerated charge carriers were greatly improved, respectively. XPS and FT-IR analysis implied that the contents of surface hydroxyl groups were improved significantly and the VBM (valance bond maximum) of O2p was 2.3 eV. Under the visible light irradiation with 120 min, a 65.3% degradation rate of phenol could be achieved. The photocatalytic activity of nitrogen doped TiO 2 was 2.08 and 1.97 times than that of pure TiO 2 and P25 TiO 2 , respectively. The enhanced visible light activity was attributed to the well anatase crystallinity, small crystallite size, intense light absorbance edge in visible region, more content of surface hydroxyl groups and high separation efficiency of photogenerated charge carriers.

  1. Enhancement in visible light-responsive photocatalytic activity by embedding Cu-doped ZnO nanoparticles on multi-walled carbon nanotubes

    Energy Technology Data Exchange (ETDEWEB)

    Ahmad, M., E-mail: mzkhm73@gmail.com [Department of Physics, Bahauddin Zakariya University, Multan 60800 (Pakistan); State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027 (China); Ahmed, E., E-mail: profejaz@gmail.com [Department of Physics, Bahauddin Zakariya University, Multan 60800 (Pakistan); Hong, Z.L.; Jiao, X.L. [State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027 (China); Abbas, T. [Institute of Industrial Control System, Rawalpindi (Pakistan); Khalid, N.R. [Department of Physics, Bahauddin Zakariya University, Multan 60800 (Pakistan); State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027 (China)

    2013-11-15

    Copper doped ZnO nanoparticles embedded on multi-walled carbon nanotubes (CNTs) were successfully synthesized using a facile, nontoxic sol method. The resulting visible light-responsive Cu-doped ZnO/CNTs composites were characterized using powder X-ray diffraction (XRD), high resolution transmission electron microscope (HR-TEM), transmission electron microscope (TEM), scanning electron microscope (SEM) with energy dispersive X-ray analysis (EDX), X-ray photoelectron spectroscopy (XPS) and Brunauer Emmett Teller (BET) surface area analyzer. Optical properties of Cu-doped ZnO/CNTs nanocomposites, studied using UV–vis diffuse reflectance spectroscopy and photoluminescence spectroscopy (PL), which exhibited extended light absorption in visible light region and possessed better charge separation capability, respectively as compared to Cu-doped ZnO, pure ZnO and ZnO/CNTs composite. The photocatalytic activity was tested by degradation of methyl orange (MO) dye under visible light irradiation. The results demonstrated that Cu-doped ZnO/CNTs nanocomposites effectively bleached out MO, showing an impressive photocatalytic enhancement over ZnO, commercial ZnO, Cu-doped ZnO nanoparticles and ZnO/CNTs nanocomposites. Chemical oxygen demand (COD) of textile wastewater was also measured before and after the photocatalysis experiment under sunlight to evaluate the mineralization of wastewater. The significant decrease in COD of the treated effluent revealed a complete destruction of the organic molecules along with color removal. This dramatically enhanced photoactivity of nanocomposite photocatalysts was attributed to greater adsorptivity of dyes, extended light absorption and increased charge separation efficiency due to excellent electrical properties of carbon nanotubes and the large surface area.

  2. Non-doped white organic light-emitting diodes based on aggregation-induced emission

    Energy Technology Data Exchange (ETDEWEB)

    Chen Shuming; Kwok, Hoi Sing [Center for Display Research, Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon (Hong Kong); Zhao Zujin; Tang, Ben Zhong, E-mail: eekwok@ust.h [Department of Chemistry, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon (Hong Kong)

    2010-03-10

    Non-doped white organic light-emitting diodes (WOLEDs) based on newly synthesized bluish-green light-emitting material 1,3,6,8-tetrakis [4-(1,2,2-triphenylvinyl)phenyl]pyrene (TTPEPy) and red light-emitting material 4-(4-(1,2,2-triphenylvinyl)phenyl)-7-(5-(4-(1,2,2-triphenylvinyl) phenyl)thiophen-2-yl)benzo[c][1,2,5]thiadiazole (BTPETTD) have been demonstrated. A maximum efficiency of 7.4 cd A{sup -1}, 4 lm W{sup -1} and brightness of 18 000 cd m{sup -2} have been achieved by employing 3 nm thick 4, 4'-bis [N-(1-naphthyl-1-)-N-phenyl-amino]- biphenyl (NPB) as an electron-blocking layer. The WOLEDs exhibit a high colour rendering index of 90 and moderate colour stability with 1931 Commision International de L'Eclairage coordinates changing from (0.41, 0.41) to (0.38, 0.40) over a wide range of driving voltages. Moreover, the non-doped WOLEDs enjoy a reduced efficiency roll-off due to their nature of aggregation-induced emission.

  3. Non-doped white organic light-emitting diodes based on aggregation-induced emission

    International Nuclear Information System (INIS)

    Chen Shuming; Kwok, Hoi Sing; Zhao Zujin; Tang, Ben Zhong

    2010-01-01

    Non-doped white organic light-emitting diodes (WOLEDs) based on newly synthesized bluish-green light-emitting material 1,3,6,8-tetrakis [4-(1,2,2-triphenylvinyl)phenyl]pyrene (TTPEPy) and red light-emitting material 4-(4-(1,2,2-triphenylvinyl)phenyl)-7-(5-(4-(1,2,2-triphenylvinyl) phenyl)thiophen-2-yl)benzo[c][1,2,5]thiadiazole (BTPETTD) have been demonstrated. A maximum efficiency of 7.4 cd A -1 , 4 lm W -1 and brightness of 18 000 cd m -2 have been achieved by employing 3 nm thick 4, 4'-bis [N-(1-naphthyl-1-)-N-phenyl-amino]- biphenyl (NPB) as an electron-blocking layer. The WOLEDs exhibit a high colour rendering index of 90 and moderate colour stability with 1931 Commision International de L'Eclairage coordinates changing from (0.41, 0.41) to (0.38, 0.40) over a wide range of driving voltages. Moreover, the non-doped WOLEDs enjoy a reduced efficiency roll-off due to their nature of aggregation-induced emission.

  4. Effect of thallium doping on the electrical and optical properties of CdO thin films

    International Nuclear Information System (INIS)

    Dakhel, A.A.

    2008-01-01

    A series of lightly Tl-doped CdO thin films (1%,1.5%,2%,2.5%, and 3%) have been prepared by a vacuum evaporation method on glass and Si wafer substrates. The prepared films were subjected to structural study by X-ray diffraction, optical characterisation by UV-VIS-NIR absorption spectroscopy, and dc-electrical measurements. Experimental data indicate that Tl 3+ doping slightly stretching stresses the CdO crystalline structure and changes the optical and electrical properties. It was observed that Tl doping widens the energy gap of CdO from 2.22 eV to 2.83 eV via a Burstein-Moss energy level shift. The band gap shrinkage was also observed for carrier concentrations N el >1.13 x 10 20 cm -3 , which was explained by merging of the impurity band with the conduction band. The optical properties were explained by using Hamberg et al.'s band-to-band transitions and classical Drude theory. The electrical behaviour of the samples shows that they are degenerate semiconductors. The 2% Tl-doped CdO sample shows an increase in its mobility by about 1.4 times, conductivity by 5 times, and carrier concentration by 3.6 times relative to the undoped CdO film. From the transparent-conducting-oxide point of view, Tl is sufficiently effective for CdO doping but does not emulate other dopants like In,Sn,Sc, and Y. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  5. Luminescence and scintillation properties of Ce-doped Cs2ZnCl4 crystals

    Science.gov (United States)

    Sugawara, K.; Koshimizu, M.; Yanagida, T.; Fujimoto, Y.; Haruki, R.; Nishikido, F.; Kishimoto, S.; Asai, K.

    2015-03-01

    In this study, we have synthesized scintillation materials based on Ce-doped Cs2ZnCl4 crystals. The light yield was enhanced by up to 20% by doping Cs2ZnCl4 with Ce3+ ions. In the scintillation time profiles, fast components exhibited decay time constants on the order of nanoseconds, which was ascribed to Auger-free luminescence (AFL). The light yield of the AFL component decreased at 10 mol% Ce3+ concentration, which is mainly attributed to the reabsorption of AFL photons inside the crystals by Ce3+ ions, as seen in the scintillation spectra. Long components had decay time constants of approximately 30 ns. In addition, at 10 mol% Ce3+ concentration, a prominent band appeared at approximately 500 nm in the scintillation spectrum, which was not observed in the photoluminescence spectra. The long components in the scintillation time profiles and the 500 nm band in the scintillation spectra were tentatively attributed to self-trapped excitons perturbed by Ce3+ ions.

  6. Efficient non-doped phosphorescent orange, blue and white organic light-emitting devices

    Science.gov (United States)

    Yin, Yongming; Yu, Jing; Cao, Hongtao; Zhang, Letian; Sun, Haizhu; Xie, Wenfa

    2014-10-01

    Efficient phosphorescent orange, blue and white organic light-emitting devices (OLEDs) with non-doped emissive layers were successfully fabricated. Conventional blue phosphorescent emitters bis [4,6-di-fluorophenyl]-pyridinato-N,C2'] picolinate (Firpic) and Bis(2,4-difluorophenylpyridinato) (Fir6) were adopted to fabricate non-doped blue OLEDs, which exhibited maximum current efficiency of 7.6 and 4.6 cd/A for Firpic and Fir6 based devices, respectively. Non-doped orange OLED was fabricated utilizing the newly reported phosphorescent material iridium (III) (pbi)2Ir(biq), of which manifested maximum current and power efficiency of 8.2 cd/A and 7.8 lm/W. The non-doped white OLEDs were achieved by simply combining Firpic or Fir6 with a 2-nm (pbi)2Ir(biq). The maximum current and power efficiency of the Firpic and (pbi)2Ir(biq) based white OLED were 14.8 cd/A and 17.9 lm/W.

  7. In Situ Fluorine Doping of TiO2 Superstructures for Efficient Visible-Light Driven Hydrogen Generation.

    Science.gov (United States)

    Zhang, Peng; Tachikawa, Takashi; Fujitsuka, Mamoru; Majima, Tetsuro

    2016-03-21

    With the aid of breakthroughs in nanoscience and nanotechnology, it is imperative to develop metal oxide semiconductors through visible light-driven hydrogen generation. In this study, TiOF2 was incorporated as an n-type F-dopant source to TiO2 mesocrystals (TMCs) with visible-light absorption during the topotactic transformation. The crystal growth, structural change, and dynamic morphological evolution, from the initial intermediate NH4 TiOF3 to HTiOF3, TiOF2, and F-doped TMCs, were verified through in situ temperature-dependent techniques to elucidate the doping mechanism from intermediate TiOF2. The visible-light efficiencies of photocatalytic hydrogen were dependent on the contents of the dopant as compared with the pure TMC and a controled reference. Using femtosecond time-resolved diffuse reflectance spectroscopy, the charge-transfer dynamics were monitored to confirm the improvement of charge separation after doping. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  8. Antibacterial properties of F-doped ZnO visible light photocatalyst

    Energy Technology Data Exchange (ETDEWEB)

    Podporska-Carroll, Joanna, E-mail: joannapcarroll@gmail.com [Center for Research in Engineering Surface Technology (CREST), DIT FOCAS Institute, Kevin St., Dublin (Ireland); Myles, Adam [Center for Research in Engineering Surface Technology (CREST), DIT FOCAS Institute, Kevin St., Dublin (Ireland); School of Chemical and Pharmaceutical Sciences, Dublin Institute of Technology, Kevin St., Dublin (Ireland); Quilty, Brid [School of Biotechnology, Dublin City University, Dublin (Ireland); McCormack, Declan E.; Fagan, Rachel [Center for Research in Engineering Surface Technology (CREST), DIT FOCAS Institute, Kevin St., Dublin (Ireland); School of Chemical and Pharmaceutical Sciences, Dublin Institute of Technology, Kevin St., Dublin (Ireland); Hinder, Steven J. [The Surface Analysis Laboratory, Faculty of Engineering and Physical Sciences, University of Surrey, Guildford, Surrey GU2 7XH (United Kingdom); Dionysiou, Dionysios D., E-mail: dionysios.d.dionysiou@uc.edu [Environmental Engineering and Science Program, Department of Biomedical, Chemical and Environmental Engineering (DBCEE), 705 Engineering Research Center, University of Cincinnati, Cincinnati, OH 45221-0012 (United States); Pillai, Suresh C., E-mail: Pillai.Suresh@itsligo.ie [Center for Research in Engineering Surface Technology (CREST), DIT FOCAS Institute, Kevin St., Dublin (Ireland); Nanotechnology Research Group, Department of Environmental Science, PEM Centre, Institute of Technology Sligo, Sligo (Ireland)

    2017-02-15

    Highlights: • F doped ZnO nano-powders were obtained by a modified sol–gel method. • These materials were found to be effective against S. aureus and E. coli. • Enhanced visible light photocatalytic and antimicrobial properties were obtained. • The toxic effect of ZnO on bacteria can be due to the release of zinc cations. • Production of reactive oxidation species influences bacterial viability. - Abstract: Nanocrystalline ZnO photocatalysts were prepared by a sol–gel method and modified with fluorine to improve their photocatalytic anti-bacterial activity in visible light. Pathogenic bacteria such as Escherichia coli (Gram-negative) and Staphylococcus aureus (Gram-positive) were employed to evaluate the antimicrobial properties of synthesized materials. The interaction with biological systems was assessed by analysis of the antibacterial properties of bacteria suspended in 2% (w/w) powder solutions. The F-doping was found to be effective against S. aureus (99.99% antibacterial activity) and E. coli (99.87% antibacterial activity) when irradiated with visible light. Production of reactive oxygen species is one of the major factors that negatively impact bacterial growth. In addition, the nanosize of the ZnO particles can also be toxic to microorganisms. The small size and high surface-to-volume ratio of the ZnO nanoparticles are believed to play a role in enhancing antimicrobial activity.

  9. Tunable band alignment in two-phase-coexistence Nb3O7F nanocrystals with enhanced light harvesting and photocatalytic performance

    Science.gov (United States)

    Li, Zhen; Huang, Fei; Feng, Xin; Yan, Aihua; Dong, Haiming; Hu, Miao; Li, Qi

    2018-06-01

    A two-phase-coexistence technique offers intriguing variables to maneuver novel and enhanced functionality in a single-component material. Most importantly, new band alignment and perfect interfaces between two phases can strongly affect local photoelectronic properties. However, previous efforts to achieve two-phase coexistence were mainly restricted to specific systems and methods. Here we demonstrate a phase-transition route to acquire two-phase-coexistence niobium oxyfluoride (Nb3O7F) nanocrystals for the first time. Based on key distinguishing features of the experimental results and theoretical analysis, the phase transition of Nb3O7F involves an organic/inorganic hybrid, heat treating, Al-doping, lattice deformation and structural rearrangement. The band gap can be effectively tuned from 3.03 eV to 2.84 eV, and the VBM can be tuned from 1.49 eV to 1.69 eV according to the phase proportion. Benefiting from uniform nanocrystal size, tunable band alignment and an optimized interfacial structure, the two-phase coexistence markedly enhances visible-light harvesting and the photocatalytic performance of Nb3O7F nanocrystals. The results not only demonstrate an opportunity to explore two-phase coexistence of novel nanocrystals, but also illustrate the role of two-phase coexistence in achieving enhanced photoelectronic properties.

  10. Solution-Processed n-Type Graphene Doping for Cathode in Inverted Polymer Light-Emitting Diodes.

    Science.gov (United States)

    Kwon, Sung-Joo; Han, Tae-Hee; Kim, Young-Hoon; Ahmed, Towfiq; Seo, Hong-Kyu; Kim, Hobeom; Kim, Dong Jin; Xu, Wentao; Hong, Byung Hee; Zhu, Jian-Xin; Lee, Tae-Woo

    2018-02-07

    n-Type doping with (4-(1,3-dimethyl-2,3-dihydro-1H-benzoimidazol-2-yl)phenyl) dimethylamine (N-DMBI) reduces a work function (WF) of graphene by ∼0.45 eV without significant reduction of optical transmittance. Solution process of N-DMBI on graphene provides effective n-type doping effect and air-stability at the same time. Although neutral N-DMBI act as an electron receptor leaving the graphene p-doped, radical N-DMBI acts as an electron donator leaving the graphene n-doped, which is demonstrated by density functional theory. We also verify the suitability of N-DMBI-doped n-type graphene for use as a cathode in inverted polymer light-emitting diodes (PLEDs) by using various analytical methods. Inverted PLEDs using a graphene cathode doped with N-DMBI radical showed dramatically improved device efficiency (∼13.8 cd/A) than did inverted PLEDs with pristine graphene (∼2.74 cd/A). N-DMBI-doped graphene can provide a practical way to produce graphene cathodes with low WF in various organic optoelectronics.

  11. Light storage in a doped solid enhanced by feedback-controlled pulse shaping

    International Nuclear Information System (INIS)

    Beil, F.; Buschbeck, M.; Heinze, G.; Halfmann, T.

    2010-01-01

    We report on experiments dealing with feedback-controlled pulse shaping to optimize the efficiency of light storage by electromagnetically induced transparency (EIT) in a Pr 3+ :Y 2 SiO 5 crystal. A learning loop in combination with an evolutionary algorithm permits the automatic determination of optimal temporal profiles of intensities and frequencies in the driving laser pulses (i.e., the probe and coupling pulses). As a main advantage, the technique finds optimal solutions even in the complicated multilevel excitation scheme of a doped solid, involving large inhomogeneous broadening. The learning loop experimentally determines optimal temporal intensity profiles of the coupling pulses for a given probe pulse. The optimized intensity pulse shapes enhance the light-storage efficiency in the doped solid by a factor of 2. The learning loop also determines a fast and efficient preparation pulse sequence, which serves to optically prepare the crystal prior to light-storage experiments. The optimized preparation sequence is 5 times faster than standard preparation sequences. Moreover, the optimized preparation sequence enhances the optical depth in the medium by a factor of 5. As a consequence, the efficiency of light storage also increases by another factor of 3. Our experimental data clearly demonstrate the considerable potential of feedback-controlled pulse shaping, applied to EIT-driven light storage in solid media.

  12. Investigations of white light emitting europium doped zinc oxide nanoparticles

    International Nuclear Information System (INIS)

    Ashtaputre, S S; Nojima, A; Marathe, S K; Matsumura, D; Ohta, T; Tiwari, R; Dey, G K; Kulkarni, S K

    2008-01-01

    Europium doped zinc oxide nanoparticles have been synthesized using a chemical route. The amount of doped europium was varied which shows the changes in the photoluminescence (PL) intensity. The post synthesis annealing effect on the properties of ZnO nanoparticles has also been investigated. In general, PL is broad and a white light is emitted which originates from ZnO and the intra-4f transitions of Eu 3+ ions. The x-ray diffraction patterns do not show any Eu-related peaks for as-synthesized ZnO nanoparticles as well as for annealed samples. X-ray absorption spectroscopy reveals that europium ions are present on the surface of the core of ZnO and inside the shell of zinc hydroxide [Zn(OH 2 )] after annealing

  13. Dual-Band Modulation of Visible and Near-Infrared Light Transmittance in an All-Solution-Processed Hybrid Micro-Nano Composite Film.

    Science.gov (United States)

    Liang, Xiao; Chen, Mei; Guo, Shumeng; Zhang, Lanying; Li, Fasheng; Yang, Huai

    2017-11-22

    Smart windows with controllable visible and near-infrared light transmittance can significantly improve the building's energy efficiency and inhabitant comfort. However, most of the current smart window technology cannot achieve the target of ideal solar control. Herein, we present a novel all-solution-processed hybrid micronano composite smart material that have four optical states to separately modulate the visible and NIR light transmittance through voltage and temperature, respectively. This dual-band optical modulation was achieved by constructing a phase-separated polymer framework, which contains the microsized liquid crystals domains with a negative dielectric constant and tungsten-doped vanadium dioxide (W-VO 2 ) nanocrystals (NCs). The film with 2.5 wt % W-VO 2 NCs exhibits transparency at normal condition, and the passage of visible light can be reversibly and actively regulated between 60.8% and 1.3% by external applied voltage. Also, the transmittance of NIR light can be reversibly and passively modulated between 59.4% and 41.2% by temperature. Besides, the film also features easy all-solution processability, fast electro-optical (E-O) response time, high mechanical strength, and long-term stability. The as-prepared film provides new opportunities for next-generation smart window technology, and the proposed strategy is conductive to engineering novel hybrid inorganic-organic functional matters.

  14. Visible sub-band gap photoelectron emission from nitrogen doped and undoped polycrystalline diamond films

    Energy Technology Data Exchange (ETDEWEB)

    Elfimchev, S., E-mail: sergeyel@tx.technion.ac.il; Chandran, M.; Akhvlediani, R.; Hoffman, A.

    2017-07-15

    Highlights: • Nitrogen related centers in diamond film are mainly responsible for visible sub-band-gap photoelectron emission. • The influence of film thickness and substrate on the measured photoelectron emission yields was not found. • Nanocrystalline diamonds have low electron emission yields most likely because of high amount of defects. • Visible sub-band gap photoelectron emission may increase with temperature due to electron trapping/detrapping processes. - Abstract: In this study the origin of visible sub-band gap photoelectron emission (PEE) from polycrystalline diamond films is investigated. The PEE yields as a function of temperature were studied in the wavelengths range of 360–520 nm. Based on the comparison of electron emission yields from diamond films deposited on silicon and molybdenum substrates, with different thicknesses and nitrogen doping levels, we suggested that photoelectrons are generated from nitrogen related centers in diamond. Our results show that diamond film thickness and substrate material have no significant influence on the PEE yield. We found that nanocrystalline diamond films have low electron emission yields, compared to microcrystalline diamond, due to the presence of high amount of defects in the former, which trap excited electrons before escaping into the vacuum. However, the low PEE yield of nanocrystalline diamond films was found to increase with temperature. The phenomenon was explained by the trap assisted photon enhanced thermionic emission (ta-PETE) model. According to the ta-PETE model, photoelectrons are trapped by shallow traps, followed by thermal excitation at elevated temperatures and escape into the vacuum. Activation energies of trap levels were estimated for undoped nanocrystalline, undoped microcrystalline and N-doped diamond films using the Richardson-Dushman equation, which gives 0.13, 0.39 and 0.04 eV, respectively. Such low activation energy of trap levels makes the ta-PETE process very

  15. Photonic, and photocatalytic behavior of TiO{sub 2} mediated by Fe, CO, Ni, N doping and co-doping

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Jia [College of Materials Science and Engineering, Taiyuan University of Technology, Taiyuan (China); Zhao, Y.F. [Institute of Coordination Bond Metrology and Engineering, School of Materials Science and Engineering, China Jiliang University, Hangzhou 310018 (China); Wang, T., E-mail: twang@zju.edu.cn [College of Electrical Engineering, Zhejiang University (China); Li, H., E-mail: Lihui02@tyut.edu.cn [College of Materials Science and Engineering, Taiyuan University of Technology, Taiyuan (China); Li, C., E-mail: canli1983@gmail.com [Institute of Coordination Bond Metrology and Engineering, School of Materials Science and Engineering, China Jiliang University, Hangzhou 310018 (China)

    2015-12-01

    Fe, Co, Ni, or N addition could modulate the photonic and catalytic responses of TiO{sub 2} for photocatalysts applications. Their morphologies, structures, compositions and photocatalytic performance in the degradation of methylene blue were characterized by scanning electron microscopy, X-ray diffraction, UV–vis absorption spectroscopy, Raman spectra and X-ray photoelectron spectroscopy. The results showed that dopants affect the electronic transition energies by changing the optical band gap and the impurity absorption peaks of the specimens. Especially, co-doping enhances the visible-light photocatalytic activity of TiO{sub 2} by 4–10 times that of pure TiO{sub 2}, and the Co and N co-doping derives 10-fold photocatalytic activity.

  16. Engineered band structure for an enhanced performance on quantum dot-sensitized solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Jin, Bin Bin [Key Laboratory of Macromolecular Science of Shaanxi Province and School of Materials Science and Engineering, Shaanxi Normal University, Xi' an 710062 (China); Department of Chemical Engineering, Institute of Chemical Industry, Shaanxi Institute of Technology, Xi' an 710300 (China); Wang, Ye Feng [School of Chemistry and Chemical Engineering, Shaanxi Normal University, Xi' an 710062 (China); Wei, Dong; Chen, Yu; Zeng, Jing Hui, E-mail: jhzeng@ustc.edu [Key Laboratory of Macromolecular Science of Shaanxi Province and School of Materials Science and Engineering, Shaanxi Normal University, Xi' an 710062 (China); Cui, Bin [School of Chemistry and Materials Science, Northwestern University, Xi' an 710620 (China)

    2016-06-20

    A photon-to-current efficiency of 2.93% is received for the Mn-doped CdS (MCdS)-quantum dot sensitized solar cells (QDSSCs) using Mn:ZnO (MZnO) nanowire as photoanode. Hydrothermal synthesized MZnO are spin-coated on fluorine doped tin oxide (FTO) glass with P25 paste to serve as photoanode after calcinations. MCdS was deposited on the MZnO film by the successive ionic layer adsorption and reaction method. The long lived excitation energy state of Mn{sup 2+} is located inside the conduction band in the wide bandgap ZnO and under the conduction band of CdS, which increases the energetic overlap of donor and acceptor states, reducing the “loss-in-potential,” inhibiting charge recombination, and accelerating electron injection. The engineered band structure is well reflected by the electrochemical band detected using cyclic voltammetry. Cell performances are evidenced by current density-voltage (J-V) traces, diffuse reflectance spectra, transient PL spectroscopy, and incident photon to current conversion efficiency characterizations. Further coating of CdSe on MZnO/MCdS electrode expands the light absorption band of the sensitizer, an efficiency of 4.94% is received for QDSSCs.

  17. Effective visible light-active nitrogen and samarium co-doped BiVO4 for the degradation of organic pollutants

    International Nuclear Information System (INIS)

    Wang, Min; Niu, Chao; Liu, Jun; Wang, Qianwu; Yang, Changxiu; Zheng, Haoyan

    2015-01-01

    Nitrogen and samarium co-doped BiVO 4 (N–xSm–BiVO 4 ) nanoparticles were synthesized using a sol–gel method with a corn stem template. The physicochemical properties of the resultant N–xSm–BiVO 4 particles were characterized using various methods: XPS, XRD, SEM, BET, and UV–Vis DRS analyses. The visible-light photocatalytic activity was successfully demonstrated by degrading a model dye, namely, methyl orange. The dopant content was optimized, and the nitrogen and samarium co-doped BiVO 4 extended the light absorption spectrum toward the visible region, significantly enhancing the photodegradation of the model dye. The Sm and N co-doped BiVO 4 exhibited the highest photocatalytic activity compared to materials with a single dopant or no dopant. The significantly enhanced photocatalytic activity of the N–Sm co-doped BiVO 4 under visible-light irradiation can be attributed to the synergistic effects of the nitrogen and samarium. - Highlights: • The N–Sm codoped BiVO 4 were synthesized using a sol–gel method with a corn stem template. • The N and Sm codoped BiVO 4 has excellent photocatalytic activity of methyl orange degradation. • The maximum activity was observed when the molar ratio of Sm/Bi was 1.0. • The high photocatalytic activity was caused by the synergistic effects between N doping and Sm doping

  18. Plant lighting system with five wavelength-band light-emitting diodes providing photon flux density and mixing ratio control

    Directory of Open Access Journals (Sweden)

    Yano Akira

    2012-11-01

    Full Text Available Abstract Background Plant growth and development depend on the availability of light. Lighting systems therefore play crucial roles in plant studies. Recent advancements of light-emitting diode (LED technologies provide abundant opportunities to study various plant light responses. The LED merits include solidity, longevity, small element volume, radiant flux controllability, and monochromaticity. To apply these merits in plant light response studies, a lighting system must provide precisely controlled light spectra that are useful for inducing various plant responses. Results We have developed a plant lighting system that irradiated a 0.18 m2 area with a highly uniform distribution of photon flux density (PFD. The average photosynthetic PFD (PPFD in the irradiated area was 438 micro-mol m–2 s–1 (coefficient of variation 9.6%, which is appropriate for growing leafy vegetables. The irradiated light includes violet, blue, orange-red, red, and far-red wavelength bands created by LEDs of five types. The PFD and mixing ratio of the five wavelength-band lights are controllable using a computer and drive circuits. The phototropic response of oat coleoptiles was investigated to evaluate plant sensitivity to the light control quality of the lighting system. Oat coleoptiles irradiated for 23 h with a uniformly distributed spectral PFD (SPFD of 1 micro-mol m–2 s–1 nm–1 at every peak wavelength (405, 460, 630, 660, and 735 nm grew almost straight upwards. When they were irradiated with an SPFD gradient of blue light (460 nm peak wavelength, the coleoptiles showed a phototropic curvature in the direction of the greater SPFD of blue light. The greater SPFD gradient induced the greater curvature of coleoptiles. The relation between the phototropic curvature (deg and the blue-light SPFD gradient (micro-mol m–2 s–1 nm–1 m–1 was 2 deg per 1 micro-mol m–2 s–1 nm–1 m–1. Conclusions The plant lighting system, with a computer with a

  19. Photoluminescence properties of boron doped InSe single crystals

    International Nuclear Information System (INIS)

    Ertap, H.; Bacıoğlu, A.; Karabulut, M.

    2015-01-01

    Undoped and boron doped InSe single crystals were grown by Bridgman–Stockbarger technique. The PL properties of undoped, 0.1% and 0.5% boron doped InSe single crystals have been investigated at different temperatures. PL measurements revealed four emission bands labeled as A, B, C and D in all the single crystals studied. These emission bands were associated with the radiative recombination of direct free excitons (n=1), impurity-band transitions, donor–acceptor recombinations and structural defect related band (impurity atoms, defects, defect complexes, impurity-vacancy complex etc.), respectively. The direct free exciton (A) bands of undoped, 0.1% and 0.5% boron doped InSe single crystals were observed at 1.337 eV, 1.335 eV and 1.330 eV in the PL spectra measured at 12 K, respectively. Energy positions and PL intensities of the emission bands varied with boron addition. The FWHM of direct free exciton band increases while the FWHM of the D emission band decreases with boron doping. Band gap energies of undoped and boron doped InSe single crystals were calculated from the PL measurements. It was found that the band gap energies of InSe single crystals decreased with increasing boron content. - Highlights: • PL spectra of InSe crystals have been studied as a function of temperature. • Four emission bands were observed in the PL spectra at low temperatures. • PL intensity and position of free exciton band vary with doping and temperature. • Temperature dependences of the bands observed in the PL spectra were analyzed

  20. Determination of photo-catalytic activity of un-doped and Mn-doped TiO2 anatase powders on acetaldehyde under UV and visible light

    International Nuclear Information System (INIS)

    Papadimitriou, Vassileios C.; Stefanopoulos, Vassileios G.; Romanias, Manolis N.; Papagiannakopoulos, Panos; Sambani, Kyriaki; Tudose, Valentin; Kiriakidis, George

    2011-01-01

    Titanium dioxide (TiO 2 ) photocatalytic powder materials doped with various levels of manganese (Mn) were synthesized to be used as additives to wall painting in combating indoor and outdoor air pollution. The heterogeneous photocatalytic degradation of gaseous acetaldehyde (CH 3 CHO) on Mn–TiO 2 surfaces under ultraviolet and visible (UV/Vis) irradiation was investigated, by employing the Photochemical Static Reactor coupled with Fourier-Transformed Infrared spectroscopy (PSR/FTIR) technique. Experiments were performed by exposing acetaldehyde (∼ 400 Pa) and synthetic air mixtures (∼ 1.01 × 10 5 Pa total pressure) on un-doped TiO 2 and doped with various levels of Mn (0.1–33% mole percentage) under UV and visible irradiation at room temperature. Photoactivation was initiated using either UV or visible light sources with known emission spectra. Initially, the photo-activity of CH 3 CHO under the above light sources, and the physical adsorption of CH 3 CHO on Mn–TiO 2 samples in the absence of light were determined prior to the photocatalytic experiments. The photocatalytic loss of CH 3 CHO on un-doped TiO 2 and Mn–TiO 2 samples in the absence and presence of UV or visible irradiation was measured over a long time period (≈ 60 min), to evaluate their relative photocatalytic activity. The gaseous photocatalytic end products were also determined using absorption FTIR spectroscopy. Carbon dioxide (CO 2 ) was identified as the main photocatalysis product. It was found that 0.1% Mn–TiO 2 samples resulted in the highest photocatalytic loss of CH 3 CHO under visible irradiation. This efficiency was drastically diminished at higher levels of Mn doping (1–33%). The CO 2 yields were the highest for 0.1% Mn–TiO 2 samples under UV irradiation, in agreement with the observed highest CH 3 CHO decomposition rates. It was demonstrated that low-level (0.1%) doping of TiO 2 with Mn results in a significant increase of their photocatalytic activity in the visible

  1. Ferromagnetism in doped or undoped spintronics nanomaterials

    Science.gov (United States)

    Qiang, You

    2010-10-01

    Much interest has been sparked by the discovery of ferromagnetism in a range of oxide doped and undoped semiconductors. The development of ferromagnetic oxide semiconductor materials with giant magnetoresistance (GMR) offers many advantages in spintronics devices for future miniaturization of computers. Among them, TM-doped ZnO is an extensively studied n-type wide-band-gap (3.36 eV) semiconductor with a tremendous interest as future mini-computer, blue light emitting, and solar cells. In this talk, Co-doped ZnO and Co-doped Cu2O semiconductor nanoclusters are successfully synthesized by a third generation sputtering-gas-aggregation cluster technique. The Co-doped nanoclusters are ferromagnetic with Curie temperature above room temperature. Both of Co-doped nanoclusters show positive magnetoresistance (PMR) at low temperature, but the amplitude of the PMRs shows an anomalous difference. For similar Co doping concentration at 5 K, PMR is greater than 800% for Co-doped ZnO but only 5% for Co-doped Cu2O nanoclusters. Giant PMR in Co-doped ZnO which is attributed to large Zeeman splitting effect has a linear dependence on applied magnetic field with very high sensitivity, which makes it convenient for the future spintronics applications. The small PMR in Co-doped Cu2O is related to its vanishing density of states at Fermi level. Undoped Zn/ZnO core-shell nanoparticle gives high ferromagnetic properties above room temperature due to the defect induced magnetization at the interface.

  2. Preparation and characterization of carbon and nitrogen Co-doped TiO/sub 2/ with enhanced visible light activity

    International Nuclear Information System (INIS)

    Li, D.; Fang, B.; Zhang, K.; Hu, C.

    2012-01-01

    To make full use of solar light in photocatalysis reactions, carbon and nitrogen co-doped Titanium dioxide nanoparticles were prepared through a facile process. Subsequently the structure and properties of the doped nanoparticles were characterized by UV-Vis spectroscopy, photoluminescence spectra (PL), X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS), respectively. In addition, the photo-catalytic activity of the samples was evaluated by photo-catalytic degradation of methyl orange aqueous solution under visible light irradiation. Results revealed that the calcined temperatures affected the structure and photo-catalytic activity of the nanoparticles and the N, C-co-doped TiO/sub 2/ (400 deg. C) nanoparticles exhibited the highest photo-catalytic activity, which could be attributed to the synergistic effect of co-doped carbon and nitrogen atoms. (author)

  3. Investigation of the structural, optical and electrical transport properties of n-doped CdSe thin films

    Science.gov (United States)

    Ali, H. M.; Abd El-Ghanny, H. A.

    2008-04-01

    Thin films of (CdSe)90(In2O3)10, (CdSe)90(SnO2)10 and (CdSe)90(ZnO)10 have been grown on glass substrates by the electron beam evaporation technique. It has been found that undoped and Sn or In doped CdSe films have two direct transitions corresponding to the energy gaps Eg and Eg+Δ due to spin-orbit splitting of the valence band. The electrical resistivity for n-doped CdSe thin films as a function of light exposure time has been studied. The influence of doping on the structural, optical and electrical characteristics of In doped CdSe films has been investigated in detail. The lattice parameters, grain size and dislocation were determined from x-ray diffraction patterns. The optical transmittance and band gap of these films were determined using a double beam spectrophotometer. The DC conductivity of the films was measured in vacuum using a two-probe technique.

  4. On single doping and co-doping of spray pyrolysed ZnO films: Structural, electrical and optical characterisation

    International Nuclear Information System (INIS)

    Vimalkumar, T.V.; Poornima, N.; Jinesh, K.B.; Kartha, C. Sudha; Vijayakumar, K.P.

    2011-01-01

    In this paper we present studies on ZnO thin films (prepared using Chemical Spray pyrolysis (CSP) technique) doped in two different ways; in one set, 'single doping' using indium was done while in the second set, 'co-doping' using indium and fluorine was adopted. In the former case, effect of in-situ as well as ex-situ doping using In was analyzed. Structural (XRD studies), electrical (I-V measurements) and optical characterizations (through absorption, transmission and photoluminescence studies) of the films were done. XRD analysis showed that, for spray-deposited ZnO films, ex-situ doping using Indium resulted in preferred (0 0 2) plane orientation, while in-situ doping caused preferred orientation along (1 0 0), (0 0 2), (1 0 1) planes; however for higher percentage of in-situ doping, orientation of grains changed from (0 0 2) plane to (1 0 1) plane. The co-doped films had (0 0 2) and (1 0 1) planes. Lowest resistivity (2 x 10 -3 Ω cm) was achieved for the films, doped with 1% Indium through in-situ method. Photoluminescence (PL) emissions of ex-situ doped and co-doped samples had two peaks; one was the 'near band edge' emission (NBE) and the other was the 'blue-green' emission. But interestingly the PL emission of in-situ doped samples exhibited only the 'near band edge' emission. Optical band gap of the films increased with doping percentage, in all cases of doping.

  5. Recent advances in rare earth doped alkali-alkaline earth borates for solid state lighting applications

    Science.gov (United States)

    Verma, Shefali; Verma, Kartikey; Kumar, Deepak; Chaudhary, Babulal; Som, Sudipta; Sharma, Vishal; Kumar, Vijay; Swart, Hendrik C.

    2018-04-01

    As a novel class of inorganic phosphor, the alkali-alkaline earth borate phosphors have gained huge attention due to their charming applications in solid-state lighting (SSL) and display devices. The current research drive shows that phosphors based on the alkali-alkaline earth borates have transformed the science and technology due to their high transparency over a broad spectral range, their flexibility in structure and durability for mechanical and high-laser applications. Recent advances in various aspects of rare-earth (RE) doped borate based phosphors and their utilizations in SSL and light emitting diodes are summarized in this review article. Moreover, the present status and upcoming scenario of RE-doped borate phosphors were reviewed in general along with the proper credential from the existing literature. It is believed that this review is a sole compilation of crucial information about the RE-doped borate phosphors in a single platform.

  6. Operation voltage behavior of organic light emitting diodes with polymeric buffer layers doped by weak electron acceptor

    Energy Technology Data Exchange (ETDEWEB)

    Jeon, Hyeon Soo; Cho, Sang Hee [Department of Information Display and Advanced Display Research Center, Kyung Hee University, Seoul 130-701 (Korea, Republic of); Seo, Jaewon; Park, Yongsup [Department of Physics, Kyung Hee University, Seoul 130-701 (Korea, Republic of); Suh, Min Chul, E-mail: mcsuh@khu.ac.kr [Department of Information Display and Advanced Display Research Center, Kyung Hee University, Seoul 130-701 (Korea, Republic of)

    2013-11-01

    We present polymeric buffer materials based on poly[2,7-(9,9-dioctyl-fluorene)-co-(1,4-phenylene -((4-sec-butylphenyl)imino)-1,4-phenylene)] (TFB) for highly efficient solution processed organic light emitting diodes (OLEDs). Doped TFB with 9,10-dicyanoanthracene, a weak electron acceptor results in significant improvement of current flow and driving voltage. Maximum current- and power-efficiency value of 12.6 cd/A and 18.1 lm/W are demonstrated from phosphorescent red OLEDs with this doped polymeric anode buffer system. - Highlights: • Polymeric buffer materials for organic light emitting diodes (OLEDs). • Method to control hole conductivity of polymeric buffer layer in OLED device. • Enhanced current density of buffer layers upon 9,10-dicyanoanthracene (DCA) doping. • Comparison of OLED devices having polymeric buffer layer with or without DCA. • Effect on operating voltage by doping DCA in the buffer layer.

  7. Preparation, characterization of Sb-doped ZnO nanocrystals and their excellent solar light driven photocatalytic activity

    Energy Technology Data Exchange (ETDEWEB)

    Nasser, Ramzi; Othmen, Walid Ben Haj [Laboratoire de Physico-Chimie des Matériaux Minéraux et leurs Applications, Centre National de Recherches en Sciences des Matériaux, B.P. 95 Hammam-Lif, 2050 (Tunisia); Département de Physique, Faculté des Sciences de Tunis, University of Tunis El Manar 2092 (Tunisia); Elhouichet, Habib, E-mail: habib.elhouichet@fst.rnu.tn [Laboratoire de Physico-Chimie des Matériaux Minéraux et leurs Applications, Centre National de Recherches en Sciences des Matériaux, B.P. 95 Hammam-Lif, 2050 (Tunisia); Département de Physique, Faculté des Sciences de Tunis, University of Tunis El Manar 2092 (Tunisia); Férid, Mokhtar [Laboratoire de Physico-Chimie des Matériaux Minéraux et leurs Applications, Centre National de Recherches en Sciences des Matériaux, B.P. 95 Hammam-Lif, 2050 (Tunisia)

    2017-01-30

    Highlights: • Sb-ZnO was obtained by modified sol-gel method using citric acid as stabilizing agent. • Sb incorporated both in lattice and interstitial sites. • The formation of (Sb{sub Zn}–2 V{sub Zn}) acceptor level was revealed by photoluminescence studies. • Optimum Sb content to show higher photocatalytic activity was found to be 3%. - Abstract: In the present study, undoped and antimony (Sb) doped ZnO nanocrystals (NCs) were prepared by a simple and economical sol-gel method. X-ray diffraction (XRD) and transmission electron microscopy (TEM) revealed the purity of the obtained phase and its high crystallinity. Raman analysis confirms the hexagonal Wurtzite ZnO structure. According to the diffuse reflectance results, the band gap was found to decrease up to 3% of Sb doping (ZSb3 sample). The results of X-ray photoelectron spectroscopy (XPS) measurements reveal that Sb ions occupied both Zn and interstitials sites. The successful substitution of antimony in ZnO lattice suggests the formation of the complex (Sb{sub Zn}–2 V{sub Zn}) acceptor level above the valence band. Particularly for ZSb3 sample, the UV photoluminescence (PL) band presents an obvious red-shift attributed to the formation of this complex. Rhodamine B (RhB) was used to evaluate the photocatalytic activity of Sb-doped ZnO NCs under sunlight irradiation. It was found that oxygen vacancies play a major role in the photocatalytic process by trapping the excited electrons and inhibiting the radiative recombination. During the photocatalytic mechanism, the Sb doping, expressed through the apparition of the (Sb{sub Zn}–2 V{sub Zn}) correspondent acceptor level, enhances the sunlight absorption within the ZnO band gap, which stimulates the generation of hydroxyl radicals and promotes the photocatalytics reaction rates. Such important contribution of the hydroxyl radicals was confirmed experimentally when using ethanol as scavenger in the photocatalytic reaction. The photodegradation

  8. Enhanced visible light photocatalytic degradation of Rhodamine B over phosphorus doped graphitic carbon nitride

    Energy Technology Data Exchange (ETDEWEB)

    Chai, Bo, E-mail: willycb@163.com; Yan, Juntao; Wang, Chunlei; Ren, Zhandong; Zhu, Yuchan

    2017-01-01

    Highlights: • The phosphorus doped g-C{sub 3}N{sub 4} photocatalysts are synthesized by a co-pyrolysis procedure. • The crystal phase, morphology, and optical property of P doped g-C{sub 3}N{sub 4} are characterized. • The P doped g-C{sub 3}N{sub 4} photocatalysts show the improved photocatalytic activity. • The possible mechanism for enhanced photocatalytic activity is proposed. - Abstract: Phosphorus doped graphitic carbon nitride (g-C{sub 3}N{sub 4}) was easily synthesized using ammonium hexafluorophosphate (NH{sub 4}PF{sub 6}) as phosphorus source, and ammonium thiocyanate (NH{sub 4}SCN) as g-C{sub 3}N{sub 4} precursor, through a direct thermal co-polycondensation procedure. The obtained phosphorus doped g-C{sub 3}N{sub 4} was characterized by X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), high-resolution transmission electron microscopy (HRTEM), X-ray photoelectron spectroscopy (XPS), Fourier transform infrared spectra (FTIR), UV–vis diffuse reflectance absorption spectra (UV-DRS), photoelectrochemical measurement and photoluminescence spectra (PL). The photocatalytic activities of phosphorus doped g-C{sub 3}N{sub 4} samples were evaluated by degradation of Rhodamine B (RhB) solution under visible light irradiation. The results showed that the phosphorus doped g-C{sub 3}N{sub 4} had a superior photocatalytic activity than that of pristine g-C{sub 3}N{sub 4}, attributing to the phosphorus atoms substituting carbon atoms of g-C{sub 3}N{sub 4} frameworks to result in light harvesting enhancement and delocalized π-conjugated system of this copolymer, beneficial for the increase of photocatalytic performance. The photoelectrochemical measurements also verified that the charge carrier separation efficiency was promoted by phosphorus doping g-C{sub 3}N{sub 4}. Moreover, the tests of radical scavengers demonstrated that the holes (h{sup +}) and superoxide radicals (·O{sub 2}{sup −}) were the main active species for the

  9. Effect of Mg Doping on the Photoluminescence of GaN:Mg Films by Radio-Frequency Plasma-Assisted Molecular Beam Epitaxy

    International Nuclear Information System (INIS)

    Sui Yan-Ping; Yu Guang-Hui

    2011-01-01

    We investigate undoped GaN and Mg-doped GaN grown by rf plasma-assisted molecular beam epitaxy (MBE) with different Mg concentrations by photoluminescence (PL) at low temperature, Hall-effect and XRD measurements. In the PL spectra of lightly Mg-doped GaN films, a low intensity near band edge (NBE) emission and strong donor-acceptor pair (DAP) emission with its phonon replicas are observed. As the Mg concentration is increased, the DAP and NBE bands become weaker and a red shift of these bands is observed in the PL spectra. Yellow luminescence (YL) is observed in heavily Mg-doped GaN. The x-ray diffraction is employed to study the structure of the films. Hall measurement shows that there is a maximum value (3.9 × 10 18 cm −3 ) of hole concentration with increasing Mg source temperature for compensation effect. PL spectra of undoped GaN are also studied under N-rich and Ga-rich growth conditions. Yellow luminescences of undoped Ga-rich GaN and heavily Mg-doped GaN are compared, indicating the different origins of the YL bands. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  10. Electrical and optical properties of Si-doped Ga2O3

    Science.gov (United States)

    Li, Yin; Yang, Chuanghua; Wu, Liyuan; Zhang, Ru

    2017-05-01

    The charge densities, band structure, density of states, dielectric functions of Si-doped β-Ga2O3 have been investigated based on the density functional theory (DFT) within the hybrid functional HSE06. The heavy doping makes conduction band split out more bands and further influences the band structure. It decreases the band gap and changes from a direct gap to an indirect gap. After doping, the top of the valence bands is mainly composed by the O-2p states, Si-3p states and Ga-4p states and the bottom of the conduction bands is almost formed by the Si-3s, Si-3p and Ga-4s orbits. The anisotropic optical properties have been investigated by means of the complex dielectric function. After the heavy Si doping, the position of absorption band edges did not change much. The slope of the absorption curve descends and indicates that the absorption became more slow for Si-doped β-Ga2O3 than undoped one due to the indirect gap of Si-doped β-Ga2O3.

  11. Effects of photocatalytic activity of metal and non-metal doped Tio2 for Hydrogen production enhancement - A Review

    Science.gov (United States)

    Nur Aqilah Sulaiman, Siti; Zaky Noh, Mohamad; Nadia Adnan, Nurul; Bidin, Noriah; Razak, Siti Noraiza Ab

    2018-05-01

    Titanium dioxide TiO2 is well-known materials that has become an efficient photocatalyst for environmental sustainability. Known as solar driven catalysis, TiO2 is considered as the most promising way to alleviate environmental issues caused by the combustion of fossil fuels and to meet worldwide demands for energy. Much effort has been concerned on TiO2 band gap modification to become a visible-light-activated photocatalysts of TiO2 because it can only be excited by UV light irradiation due to its large band gap. Modifications like metals and nonmetals doping has been proposed in the past decades. This reviews survey recent advanced preparation methods of doped-TiO2 including various types of doping methods for various types of dopants and provides general review on further modifications. The characterizations techniques used in order to determine the structural, morphological and optical properties of modified TiO2 is also discussed. Further, a new method of TiO2 modification is proposed in this mini review paper.

  12. Synergistic Effects of Sm and C Co-Doped Mixed Phase Crystalline TiO2 for Visible Light Photocatalytic Activity

    Directory of Open Access Journals (Sweden)

    Fuchang Peng

    2017-02-01

    Full Text Available Mixed phase TiO2 nanoparticles with element doping by Sm and C were prepared via a facile sol-gel procedure. The UV-Vis light-diffuse reflectance spectroscopy analysis showed that the absorption region of co-doped TiO2 was shifted to the visible-light region, which was attributed to incorporation of samarium and carbon into the TiO2 lattice during high-temperature reaction. Samarium effectively decreased the anatase-rutile phase transformation. The grain size can be controlled by Sm doping to achieve a large specific surface area useful for the enhancement of photocatalytic activity. The photocatalytic activities under visible light irradiation were evaluated by photocatalytic degradation of methylene blue (MB. The degradation rate of MB over the Sm-C co-doped TiO2 sample was the best. Additionally, first-order apparent rate constants increased by about 4.3 times compared to that of commercial Degusssa P25 under the same experimental conditions. Using different types of scavengers, the results indicated that the electrons, holes, and •OH radicals are the main active species for the MB degradation. The high visible-light photocatalytic activity was attributed to low recombination of the photo-generated electrons and holes which originated from the synergistic effect of the co-doped ions and the heterostructure.

  13. Optical switching in nonlinear photonic crystals lightly doped with nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Singh, Mahi R [Department of Physics and Astronomy, University of Western Ontario, London, ON N6A 3K7 (Canada); Lipson, R H [Department of Chemistry, University of Western Ontario, London, ON N6A 5B7 (Canada)

    2008-01-14

    A possible switching mechanism has been investigated for nonlinear photonic crystals doped with an ensemble of non-interacting three-level nanoparticles. In this scheme, an intense pump laser field is used to change the refractive index of the nonlinear photonic crystal while a weaker probe field monitors an absorption transition in the nanoparticles. In the absence of the strong laser field the system transmits the probe field when the resonance energy of the nanoparticles lies near the edge of the photonic band gap due to strong coupling between the photonic crystal and the nanoparticles. However, upon application of an intense pump laser field the system becomes absorbing due to a band edge frequency shift that arises due to a nonlinear Kerr effect which changes the refractive index of the crystal. It is anticipated that the optical switching mechanism described in this work can be used to make new types of photonic devices.

  14. Room temperature synthesis of Mn{sup 2+} doped ZnS d-dots and observation of tunable dual emission: Effects of doping concentration, temperature, and ultraviolet light illumination

    Energy Technology Data Exchange (ETDEWEB)

    Kole, A. K.; Kumbhakar, P. [Nanoscience Laboratory, Department of Physics, National Institute of Technology, Durgapur 713209, West Bengal (India); Tiwary, C. S. [Department of Materials Engineering, Indian Institute of Science (IISc.), Bangalore 560012 (India)

    2013-03-21

    Mn{sup 2+} doped (0-50.0 molar %) ZnS d-dots have been synthesized in water medium by using an environment friendly low cost chemical technique. Tunable dual emission in UV and yellow-orange regions is achieved by tailoring the Mn{sup 2+} doping concentration in the host ZnS nanocrystal. The optimum doping concentration for achieving efficient photoluminescence (PL) emission is determined to be {approx}1.10 (at. %) corresponding to 40.0 (molar %) of Mn{sup 2+} doping concentration used during synthesis. The mechanism of charge transfer from the host to the dopant leading to the intensity modulated tunable (594-610 nm) yellow-orange PL emission is straightforwardly understood as no capping agent is used. The temperature dependent PL emission measurements are carried out, viz., in 1.10 at. % Mn{sup 2+} doped sample and the experimental results are explained by using a theoretical PL emission model. It is found that the ratio of non-radiative to radiative recombination rates is temperature dependent and this phenomenon has not been reported, so far, in Mn{sup 2+} doped ZnS system. The colour tuning of the emitted light from the samples are evident from the calculated chromaticity coordinates. UV light irradiation for 150 min in 40.0 (molar %) Mn{sup 2+} doped sample shows an enhancement of 33% in PL emission intensity.

  15. The effect of simultaneous substitution on the electronic band structure and thermoelectric properties of Se-doped Co3SnInS2 with the Kagome lattice

    Science.gov (United States)

    Fujioka, Masaya; Shibuya, Taizo; Nakai, Junya; Yoshiyasu, Keigo; Sakai, Yuki; Takano, Yoshihiko; Kamihara, Yoichi; Matoba, Masanori

    2014-12-01

    The thermoelectric properties and electronic band structures for Se-doped Co3SnInS2 were examined. The parent compound of this material (Co3Sn2S2) has two kinds of Sn sites (Sn1 and Sn2 sites). The density functional theory (DFT) calculations show that the indium substitution at the Sn2 site induces a metallic band structure, on the other hand, a semiconducting band structure is obtained from substitution at the Sn1 site. However, according to the previous reports, since the indium atom prefers to replace the tin atom at the Sn1 site rather than the Sn2 site, the resistivity of Co3SnInS2 shows semiconducting-like behavior. In this study we have demonstrated that metallic behavior and a decrease in resistivity for Se-doped Co3SnInS2 occurs without suppression of the Seebeck coefficient. From the DFT calculations, when the selenium content is above 0.5, the total crystallographic energy shows that a higher indium occupancy at Sn2 site is more stable. Therefore, it is suggested that the selenium doping suppress the site preference for indium substitution. This is one of the possible explanations for the metallic conductivity observed in Se-doped Co3SnInS2

  16. Simple Hydrogen Plasma Doping Process of Amorphous Indium Gallium Zinc Oxide-Based Phototransistors for Visible Light Detection.

    Science.gov (United States)

    Kang, Byung Ha; Kim, Won-Gi; Chung, Jusung; Lee, Jin Hyeok; Kim, Hyun Jae

    2018-02-28

    A homojunction-structured amorphous indium gallium zinc oxide (a-IGZO) phototransistor that can detect visible light is reported. The key element of this technology is an absorption layer composed of hydrogen-doped a-IGZO. This absorption layer is fabricated by simple hydrogen plasma doping, and subgap states are induced by increasing the amount of hydrogen impurities. These subgap states, which lead to a higher number of photoexcited carriers and aggravate the instability under negative bias illumination stress, enabled the detection of a wide range of visible light (400-700 nm). The optimal condition of the hydrogen-doped absorption layer (HAL) is fabricated at a hydrogen partial pressure ratio of 2%. As a result, the optimized a-IGZO phototransistor with the HAL exhibits a high photoresponsivity of 1932.6 A/W, a photosensitivity of 3.85 × 10 6 , and a detectivity of 6.93 × 10 11 Jones under 635 nm light illumination.

  17. Enhancement of tributyltin degradation under natural light by N-doped TiO2 photocatalyst

    International Nuclear Information System (INIS)

    Bangkedphol, S.; Keenan, H.E.; Davidson, C.M.; Sakultantimetha, A.; Sirisaksoontorn, W.; Songsasen, A.

    2010-01-01

    Photo-degradation of tributyltin (TBT) has been enhanced by TiO 2 nanoparticles doped with nitrogen (N-doped TiO 2 ). The N-doped catalyst was prepared by a sol-gel reaction of titanium (IV) tetraisopropoxide with 25% ammonia solution and calcined at various temperatures from 300 to 600 deg. C. X-ray diffraction results showed that N-doped TiO 2 remained amorphous at 300 deg. C. At 400 deg. C the anatase phase occurred then transformed to the rutile phase at 600 deg. C. The crystallite size calculated from Scherrer's equation was in the range of 16-51 nm which depended on the calcination temperature. N-doped TiO 2 calcined at 400 deg. C which contained 0.054% nitrogen, demonstrated the highest photocatalytic degradation of TBT at 28% in 3 h under natural light when compared with undoped TiO 2 and commercial photocatalyst, P25-TiO 2 which gave 14.8 and 18% conversion, respectively.

  18. Highly Efficient Low-Temperature N-Doped TiO2 Catalysts for Visible Light Photocatalytic Applications

    Science.gov (United States)

    Mahy, Julien G.; Cerfontaine, Vincent; Devred, François; Gaigneaux, Eric M.; Heinrichs, Benoît; Lambert, Stéphanie D.

    2018-01-01

    In this paper, TiO2 prepared with an aqueous sol-gel synthesis by peptization process is doped with nitrogen precursor to extend its activity towards the visible region. Three N-precursors are used: urea, ethylenediamine and triethylamine. Different molar N/Ti ratios are tested and the synthesis is adapted for each dopant. For urea- and trimethylamine-doped samples, anatase-brookite TiO2 nanoparticles of 6–8 nm are formed, with a specific surface area between 200 and 275 m2·g−1. In ethylenediamine-doped samples, the formation of rutile phase is observed, and TiO2 nanoparticles of 6–8 nm with a specific surface area between 185 and 240 m2·g−1 are obtained. X-ray photoelectron spectroscopy (XPS) and diffuse reflectance measurements show the incorporation of nitrogen in TiO2 materials through Ti–O–N bonds allowing light absorption in the visible region. Photocatalytic tests on the remediation of water polluted with p-nitrophenol show a marked improvement for all doped catalysts under visible light. The optimum doping, taking into account cost, activity and ease of synthesis, is up-scaled to a volume of 5 L and compared to commercial Degussa P25 material. This up-scaled sample shows similar properties compared to the lab-scale sample, i.e., a photoactivity 4 times higher than commercial P25. PMID:29642626

  19. Near infrared photoluminescence properties of porous silicon prepared under the influence of light illumination

    International Nuclear Information System (INIS)

    Hamadeh, H; Naddaf, M; Jazmati, A

    2008-01-01

    Porous silicon (PS) has been prepared by anodic etching of boron doped silicon under the influence of monochromatic light illumination. The optical properties of the PS samples have been investigated using temperature dependent photoluminescence (PL) spectroscopy. An overall enhancement of the infrared luminescence yield is caused by the light illumination. In the visible spectral range, changes at the low energy side of the broad PL band were observed. In the near infrared spectral range, a new PL band at 850 nm, which is strongly correlated with light illumination, was detected. The new PL band disappears once blue light is used, whereas an increase in its intensity is observed, when the etching is performed under the illumination of light with wavelengths close to the band gap. By increasing the temperature, the 850 nm transition band grows at the expense of the main near infrared transition at 1100 nm. The recombination characteristics of this PL band are indicative of its extrinsic nature. The macroscopic morphology shows strong dependence on the wavelength of the illumination light. Photoassisted preparation could provide a tool for the control of the optical and structural properties of PS.

  20. Near infrared photoluminescence properties of porous silicon prepared under the influence of light illumination

    Energy Technology Data Exchange (ETDEWEB)

    Hamadeh, H; Naddaf, M; Jazmati, A [Department of Physics, Atomic Energy Commission of Syria, PO Box 6091, Damascus (Syrian Arab Republic)], E-mail: Scientific8@aec.org.sy

    2008-12-21

    Porous silicon (PS) has been prepared by anodic etching of boron doped silicon under the influence of monochromatic light illumination. The optical properties of the PS samples have been investigated using temperature dependent photoluminescence (PL) spectroscopy. An overall enhancement of the infrared luminescence yield is caused by the light illumination. In the visible spectral range, changes at the low energy side of the broad PL band were observed. In the near infrared spectral range, a new PL band at 850 nm, which is strongly correlated with light illumination, was detected. The new PL band disappears once blue light is used, whereas an increase in its intensity is observed, when the etching is performed under the illumination of light with wavelengths close to the band gap. By increasing the temperature, the 850 nm transition band grows at the expense of the main near infrared transition at 1100 nm. The recombination characteristics of this PL band are indicative of its extrinsic nature. The macroscopic morphology shows strong dependence on the wavelength of the illumination light. Photoassisted preparation could provide a tool for the control of the optical and structural properties of PS.

  1. Near infrared photoluminescence properties of porous silicon prepared under the influence of light illumination

    International Nuclear Information System (INIS)

    Hamadeh, H.; Naddaf, M.; Jazmati, A.

    2009-01-01

    Porous silicon (PS) has been prepared by anodic etching of boron doped silicon under the influence of monochromatic light illumination. The optical properties of the PS samples have been investigated using temperature dependent photoluminescence (PL) spectroscopy. An overall enhancement of the infrared luminescence yield is caused by the light illumination. In the visible spectral range, changes at the low energy side of the broad PL band were observed. In the near infrared spectral range, a new PL band at 850 nm, which is strongly correlated with light illumination, was detected. The new PL band disappears once blue light is used, whereas an increase of its intensity is observed, when the etching is performed under the illumination of light with wavelengths close to the band gap. By increasing the temperature, the 850 nm transition band grows at the expense of the main near infrared transition at 1100 nm. The recombination characteristics of this PL band are indicative of its extrinsic nature. The macroscopic morphology shows strong dependence on the wavelength of the illumination light. Photoassisted preparation could provide a tool for the control of the optical and structural properties of PS. (author)

  2. Near infrared photoluminescence properties of porous silicon prepared under the influence of light illumination

    Science.gov (United States)

    Hamadeh, H.; Naddaf, M.; Jazmati, A.

    2008-12-01

    Porous silicon (PS) has been prepared by anodic etching of boron doped silicon under the influence of monochromatic light illumination. The optical properties of the PS samples have been investigated using temperature dependent photoluminescence (PL) spectroscopy. An overall enhancement of the infrared luminescence yield is caused by the light illumination. In the visible spectral range, changes at the low energy side of the broad PL band were observed. In the near infrared spectral range, a new PL band at 850 nm, which is strongly correlated with light illumination, was detected. The new PL band disappears once blue light is used, whereas an increase in its intensity is observed, when the etching is performed under the illumination of light with wavelengths close to the band gap. By increasing the temperature, the 850 nm transition band grows at the expense of the main near infrared transition at 1100 nm. The recombination characteristics of this PL band are indicative of its extrinsic nature. The macroscopic morphology shows strong dependence on the wavelength of the illumination light. Photoassisted preparation could provide a tool for the control of the optical and structural properties of PS.

  3. Formation of Sol Gel Dried Droplets of Carbon Doped Titanium Dioxide (TiO2) at Low Temperature via Electrospraying

    Science.gov (United States)

    Halimi, S. U.; Hashib, S. Abd; Abu Bakar, N. F.; Ismail, S. N.; Nazli Naim, M.; Rahman, N. Abd; Krishnan, J.

    2018-05-01

    The high band gap energy of TiO2 and inconsistency in particles size has imposed a significant drawback on TiO2 applications. Dried droplets of carbon-doped TiO2 fine particles were produced by using electrospraying technique. The C-doped TiO2 particles were prepared by hydrolysis of titanium isopropoxide with the addition of carbon precursor followed by electrospraying the suspension in stable Taylor cone-jet mode. Coulomb fission of charged droplets from the electrospraying technique successfully transformed dispersed liquid C-doped TiO2 particles into solid. The deposited C-doped TiO2 droplets were collected on aluminium substrates placed at working distances of 10 to 20 cm from the tip of the electrospray needle. The collected C-doped TiO2 droplets were characterized by using FESEM, UV-Vis, FTIR and XRD. By increasing the working distance, the average droplets size of the deposited C-doped TiO2 was reduced from ±163.2 nm to ±147.56 nm. UV-Vis analysis showed a strong absorption in the visible-light region and about 93 nm red shift of the onset spectrum for C-doped TiO2. The red shift indicates an increase in photocatalytic efficiency by reducing the TiO2 band gap energy from 3.0 eV to 2.46 eV and shifting its activity to the visible-light region. FTIR analysis indicated the presence of Ti-C and C-O chemical bonding in the C-doped TiO2.

  4. Device characteristics of organic light-emitting diodes based on electronic structure of the Ba-doped Alq3 layer.

    Science.gov (United States)

    Lim, Jong Tae; Kim, Kyung Nam; Yeom, Geun Young

    2009-12-01

    Organic light-emitting diodes (OLEDs) with a Ba-doped tris(8-quinolinolato)aluminum(III) (Alq3) layer were fabricated to reduce the barrier height for electron injection and to improve the electron conductivity. In the OLED consisting of glass/ITO/4,4',4"-tris[2-naphthylphenyl-1-phenylamino]triphenylamine (2-TNATA, 30 nm)/4,4'-bis[N-(1-napthyl)-N-phenyl-amino]-biphenyl (NPB, 18 nm)/Alq3 (42 nm)/Ba-doped Alq3 (20 nm, x%: x = 0, 10, 25, and 50)/Al (100 nm), the device with the Alq3 layer doped with 10% Ba showed the highest light out-coupling characteristic. However, as the Ba dopant concentration was increased from 25% to 50%, this device characteristic was largely reduced. The characteristics of these devices were interpreted on the basis of the chemical reaction between Ba and Alq3 and the electron injection property by analyzing the electronic structure of the Ba-doped Alq3 layer. At a low Ba doping of 10%, mainly the Alq3 radical anion species was formed. In addition, the barrier height for electron injection in this layer was decreased to 0.6 eV, when compared to the pristine Alq3 layer. At a high Ba doping of 50%, the Alq3 molecules were severely decomposed. When the Ba dopant concentration was changed, the light-emitting characteristics of the devices were well coincided with the formation mechanism of Alq3 radical anion and Alq3 decomposition species.

  5. Synthesis of activated charcoal supported Bi-doped TiO{sub 2} nanocomposite under solar light irradiation for enhanced photocatalytic activity

    Energy Technology Data Exchange (ETDEWEB)

    Chandraboss, V.L.; Kamalakkannan, J.; Senthilvelan, S., E-mail: dr_senthilvel@yahoo.co.in

    2016-11-30

    Highlights: • Particle size and band gap of TiO{sub 2} is decreased upon Bi doping. • Methylene blue is successfully degraded over Bi/TiO{sub 2} and AC-Bi/TiO{sub 2}. • AC-Bi/TiO{sub 2} is more active photocatalyst than TiO{sub 2} and Bi/TiO{sub 2}. • AC-Bi/TiO{sub 2} led to a maximum extension of the spectral wavelength. • AC-Bi/TiO{sub 2} with enhanced photocatalytic activity produced much more reactive ·OH. - Abstract: In this study, activated charcoal (AC) supported bismuth (Bi)-doped Titanium dioxide (TiO{sub 2}) nanocomposite was synthesized by precipitation method. The photocatalytic activity of AC-Bi/TiO{sub 2} was investigated for the degradation of methylene blue (MB) in aqueous solution under solar light irradiation. The incorporation of Bi{sup 3+} into the TiO{sub 2} lattice shifts the absorbance of TiO{sub 2} to the visible region then the addition of high adsorption capacity activated charcoal to improve the efficiency of TiO{sub 2}. AC-Bi/TiO{sub 2} is found to be more efficient than Bi/TiO{sub 2} and undoped TiO{sub 2} for the degradation of MB under solar light irradiation. Surface morphology and bulk composition of the composite was obtained using high resolution-scanning electron microscopy with energy dispersive X-ray analysis. The crystal structure evolution and elemental composition were analyzed by combining Fourier transform-Raman spectroscopy, X-ray diffraction and X-ray photoelectron spectroscopy. The ultraviolet-visible (UV–vis) absorption spectra show that the absorption edge for the composite with Bi{sup 3+} has red shift as compared with that of undoped TiO{sub 2}. UV–vis diffuse reflectance spectra demonstrated a decrease in the direct band gap of AC-Bi/TiO{sub 2}. BET surface area, pore radius and pore volume of the materials were calculated by applying the BET equation to the sorption isotherms. The production of hydroxyl radicals (·OH) on the surface of solar light irradiated materialswere detected by

  6. Preparation of Fe-doped TiO{sub 2} nanotube arrays and their photocatalytic activities under visible light

    Energy Technology Data Exchange (ETDEWEB)

    Tu, Ya-Fang; Huang, Sheng-You [Department of Physics, Wuhan University, Wuhan 430072 (China); Sang, Jian-Ping, E-mail: jpsang@acc-lab.whu.edu.cn [Department of Physics, Wuhan University, Wuhan 430072 (China); Department of Physics, Jianghan University, Wuhan 430056 (China); Zou, Xian-Wu [Department of Physics, Wuhan University, Wuhan 430072 (China)

    2010-02-15

    Fe-doped TiO{sub 2} nanotube arrays have been prepared by the template-based liquid phase deposition method. Their morphologies, structures and optical properties were investigated by scanning electron microscopy, transmission electron microscopy, X-ray diffraction and UV-vis absorption spectroscopy. Their photocatalytic activities were evaluated by the degradation of methylene blue under visible light. The UV-vis absorption spectra of the Fe-doped TiO{sub 2} nanotube arrays showed a red shift and an enhancement of the absorption in the visible region compared to the undoped sample. The Fe-doped TiO{sub 2} nanotube arrays exhibited good photocatalytic activities under visible light irradiation, and the optimum dopant amount was found to be 5.9 at% in our experiments.

  7. White light emission and color tunability of dysprosium doped barium silicate glasses

    Energy Technology Data Exchange (ETDEWEB)

    Mishra, Lokesh; Sharma, Anchal; Vishwakarma, Amit K.; Jha, Kaushal [Department of Applied Physics, Delhi Technological University, Delhi 110042 (India); Jayasimhadri, M., E-mail: jayaphysics@yahoo.com [Department of Applied Physics, Delhi Technological University, Delhi 110042 (India); Ratnam, B.V.; Jang, Kiwan [Department of Physics, Changwon National University, Changwon 641-77 (Korea, Republic of); Rao, A.S.; Sinha, R.K. [Department of Applied Physics, Delhi Technological University, Delhi 110042 (India)

    2016-01-15

    The present work elucidates the synthesis of Dy{sup 3+} doped barium silicate glasses, along with the subsequent studies performed to evaluate its viability in solid state lighting applications. The synthesized photonic glasses were investigated via X-Ray Diffraction, Scanning Electron Microscopy and Fourier Transform Infrared Spectroscopy. The photoluminescence properties were examined under ultraviolet (UV)/near UV (NUV) excitation. Photoluminescence spectrum exhibited characteristic emission bands at λ{sub em}=483 nm (blue) and λ{sub em}=576 nm (yellow) which are ascribed to the {sup 4}F{sub 9/2}→{sup 6}H{sub 15/2} and {sup 4}F{sub 9/2}→{sup 6}H{sub 13/2} transitions of Dy{sup 3+} ion, respectively. The chromaticity coordinates under excitation of λ{sub ex}=348 nm are (0.31, 0.34), which lies in the white region of CIE 1931 chromaticity diagram and are in excellent proximity with the standard equal energy white illuminant (0.333, 0.333). The calculated correlated color temperature and the yellow to blue (Y/B) ratio are found to be 6602 K and 1.12, respectively for the optimized sample. The synthesized photonic glass also offered the possibility of tuning the color as exemplified through the variation in CIE coordinates, correlated color temperature and the Y/B ratio. The results confirm the possibility of color tunability from the proposed glass and may be useful for various photonic device applications. - Highlights: • Successfully synthesized Dy{sup 3+} doped barium silicate glasses. • Structural properties thoroughly discussed by using XRD and FT-IR. • Photoluminescence and colorimetry properties have been investigated. • Y/B ratio and the reason for color tunability have been successfully explained. • CIE coordinates of Dy{sup 3+}:BBS glass confirm its suitability for w-LEDs.

  8. The effect of C60 doping on the electroluminescent performance of organic light-emitting devices

    International Nuclear Information System (INIS)

    Xu Denghui; Deng Zhenbo; Xiao Jing; Guo Dong; Hao Jingang; Zhang Yuanyuan; Gao Yinhao; Liang Chunjun

    2007-01-01

    Organic light-emitting devices (OLEDs) with the PVK hole transport layer were fabricated. The effect of C 60 doping in the hole transport PVK layer on the performance of the devices was investigated by changing the C 60 content from 0 to 3.0 wt%. The OLEDs had a structure of ITO/PEDOT:PSS/PVK:C 60 (0, 0.5, 1.0, 2.0, 3.0 wt%)/AlQ/LiF/Al. The doping led to a higher conductivity in C 60 -doped PVK layer and the hole mobility of PVK was improved from 4.5x10 -7 to 2.6x10 -6 cm 2 /Vs with the doping concentration of C 60 changing from 0 to 3.0 wt%. Moreover, the doping led to a high density of equilibrium charges carriers, which facilitated hole injection and transport. Doping of C 60 in PVK resulted in efficient hole injection and low drive voltage at high luminance

  9. Multilayered phosphorescent polymer light-emitting diodes using a solution-processed n-doped electron transport layer

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Yuehua; Zhang, Mengke [Key Laboratory for Organic Electronics and Information Displays & Institute of Advanced Materials, Jiangsu National Synergetic Innovation Center for Advanced Materials, Nanjing University of Posts & Telecommunications, Nanjing 210023 (China); Zhang, Xinwen, E-mail: iamxwzhang@njupt.edu.cn [Key Laboratory for Organic Electronics and Information Displays & Institute of Advanced Materials, Jiangsu National Synergetic Innovation Center for Advanced Materials, Nanjing University of Posts & Telecommunications, Nanjing 210023 (China); Lei, Zhenfeng; Zhang, Xiaolin; Hao, Lin; Fan, Quli [Key Laboratory for Organic Electronics and Information Displays & Institute of Advanced Materials, Jiangsu National Synergetic Innovation Center for Advanced Materials, Nanjing University of Posts & Telecommunications, Nanjing 210023 (China); Lai, Wenyong, E-mail: iamwylai@njupt.edu.cn [Key Laboratory for Organic Electronics and Information Displays & Institute of Advanced Materials, Jiangsu National Synergetic Innovation Center for Advanced Materials, Nanjing University of Posts & Telecommunications, Nanjing 210023 (China); Huang, Wei [Key Laboratory for Organic Electronics and Information Displays & Institute of Advanced Materials, Jiangsu National Synergetic Innovation Center for Advanced Materials, Nanjing University of Posts & Telecommunications, Nanjing 210023 (China); Key Laboratory of Flexible Electronics & Institute of Advanced Materials, Jiangsu National Synergetic Innovation Center for Advanced Materials, Nanjing Tech University, Nanjing 211816 (China)

    2017-06-15

    Efficient multilayered green phosphorescent polymer light-emitting devices (PhPLEDs) were successfully fabricated using a solution-processed n-doped small molecular electron transporting layer (ETL) composed of 1,3,5-tris(N-phenyl-benzimidazol-2-yl)-benzene (TPBi) and CsF. We found that the electroluminescence properties of the devices with n-doped ETLs are significantly improved. The maximum luminance efficiency of the device with 7.5 wt% CsF doped TPBi ETL reached 26.9 cd/A, which is 1.5 times as large as that of the undoped device. The impedance spectra of the devices and electron transport properties of the CsF doped ETLs demonstrate that doping dramatically decreases the impedance and enhances the electrical conductivity. Similarly, enhanced performance of PhPLED is also observed by use of CsF-doped 4,7-diphenyl-1,10 -phenanthroline (BPhen) ETL. These results demonstrate that CsF can be used as an effective n-dopant in solution-processed devices.

  10. Multilayered phosphorescent polymer light-emitting diodes using a solution-processed n-doped electron transport layer

    International Nuclear Information System (INIS)

    Chen, Yuehua; Zhang, Mengke; Zhang, Xinwen; Lei, Zhenfeng; Zhang, Xiaolin; Hao, Lin; Fan, Quli; Lai, Wenyong; Huang, Wei

    2017-01-01

    Efficient multilayered green phosphorescent polymer light-emitting devices (PhPLEDs) were successfully fabricated using a solution-processed n-doped small molecular electron transporting layer (ETL) composed of 1,3,5-tris(N-phenyl-benzimidazol-2-yl)-benzene (TPBi) and CsF. We found that the electroluminescence properties of the devices with n-doped ETLs are significantly improved. The maximum luminance efficiency of the device with 7.5 wt% CsF doped TPBi ETL reached 26.9 cd/A, which is 1.5 times as large as that of the undoped device. The impedance spectra of the devices and electron transport properties of the CsF doped ETLs demonstrate that doping dramatically decreases the impedance and enhances the electrical conductivity. Similarly, enhanced performance of PhPLED is also observed by use of CsF-doped 4,7-diphenyl-1,10 -phenanthroline (BPhen) ETL. These results demonstrate that CsF can be used as an effective n-dopant in solution-processed devices.

  11. Thermoluminescence properties of Eu and Li co-doped Gd2O3, induced by UV light

    International Nuclear Information System (INIS)

    Hristov, H; Arhangelova, N; Velev, V; Uzunov, N M; Baneva, Y; Nedeva, D; Penev, I; Moschini, G; Rossi, P

    2012-01-01

    For some specific biomedical applications, connected with in-situ measurements of the absorbed dose of ultraviolet (UV) light, we have developed materials, sensitive to the light emission with a wavelength up to 320nm. Thermoluminescence (TL) yield of Gd 2 O 3 , doped with Eu and Li has been analysed with respect to the quantity of Li co-dopant. Lithium has been added as Li 2 CO 3 to a mixture of Gd 2 O 3 with 10 wt% Eu 2 O 3 . Pellets with the mixture have been sintered at a temperature of 1000°C. The kinetic parameters of the phosphors thus obtained have been studied from the TL glow curves after irradiation with UV light. It has been demonstrated that the addition of 16 wt% of Li 2 CO 3 to the Eu-doped Gd 2 O 3 yields a maximum intensity of the peaks at 87°C and at 145°C. Studies on the kinetic parameters as well as the TL properties of Eu-doped Gd 2 O 3 with the addition of 16% of Li 2 CO 3 have been conducted. It has been measured that two of the TL peaks of this phosphor have relatively long fading. Analysis of the TL properties of the phosphors obtained from Gd 2 O 3 , doped with Eu and Li, shows that they possess good sensitivity to the UV emission and could be used as appropriate phosphors for detection and quantitative measurements of UV light.

  12. Nonclassical-light generation in a photonic-band-gap nonlinear planar waveguide

    International Nuclear Information System (INIS)

    Perina, Jan Jr.; Sibilia, Concita; Tricca, Daniela; Bertolotti, Mario

    2004-01-01

    The optical parametric process occurring in a photonic-band-gap planar waveguide is studied from the point of view of nonclassical-light generation. The nonlinearly interacting optical fields are described by the generalized superposition of coherent signals and noise using the method of operator linear corrections to a classical strong solution. Scattered backward-propagating fields are taken into account. Squeezed light as well as light with sub-Poissonian statistics can be obtained in two-mode fields under the specified conditions

  13. Synergistic effects of F and Fe in co-doped TiO{sub 2} nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Yufei, E-mail: zhang.yu.fei@stu.xjtu.edu.cn; Shen, Huiyuan; Liu, Yanhua, E-mail: yhliu@mail.xjtu.edu.cn [Xi’an Jiaotong University, Department of Building Environment and Services Engineering, School of Human Settlements and Civil Engineering (China)

    2016-03-15

    TiO{sub 2} photocatalysts co-doped with F and Fe were synthesized by a sol–gel method. Synergistic effects of F and Fe in the co-doped TiO{sub 2} were verified by NH{sub 3} decomposition, X-ray diffraction (XRD), scanning electron microscopy (SEM), high-resolution transmission electron microscopy (HRTEM), X-ray photoelectron spectroscopy (XPS) and ultraviolet–visible (UV–Vis) absorption spectroscopy, and was analyzed by the simulation based on the density functional theory (DFT). The results from NH{sub 3} decomposition confirmed that the cooperation of F and Fe broadened the optical response of TiO{sub 2} to visible light region and also enhanced the photocatalytic activity of TiO{sub 2} under ultraviolet light. XRD patterns, SEM and HRTEM images showed that the co-doped samples were nanometric anatase with an average particle size of 25 nm. Co-doping with F and Fe inhibited the grain growth of TiO{sub 2} from anatase to rutile and resulted in a larger lattice defect. XPS analysis exhibited that the doped F and Fe atoms were into the TiO{sub 2} lattice. UV–Vis absorption spectra showed that its optical absorption edge was moved up to approximately 617 nm and its ultraviolet absorption was also enhanced. The DFT results indicated that the cooperation of Fe 3d and O 2p orbits narrowed the band gap of TiO{sub 2} and F 2p orbit widened the upper valence bands. The synergistic electron density around F and Fe in co-doped TiO{sub 2} was capable to enhance the photo-chemical stability of TiO{sub 2}.

  14. Scintillation property of rare earth-free SnO-doped oxide glass

    OpenAIRE

    Masai, Hirokazu; Yanagida, Takayuki; Fujimoto, Yutaka; Koshimizu, Masanori; Yoko, Toshinobu

    2012-01-01

    The authors have demonstrated scintillation of rare earth (RE)-free Sn-doped oxide glass by excitation of ionizing radiation. It is notable that light emission is attained for RE-free transparent glass due to s[2]-sp transition of Sn[2+] centre and the emission correlates with the excitation band at 20 eV. We have also demonstrated that excitation band of emission centre can be tuned by the chemical composition of the host glass. The present result is valuable not only for design of RE-free i...

  15. Slow-light solitons in atomic media and doped optical fibers

    International Nuclear Information System (INIS)

    Korolkova, N.; Sinclair, G.F.; Leonhardt, U.

    2005-01-01

    Full text: We show how to generate optical solitons in atomic media that can be slowed down or accelerated at will. Such slow-light soliton is a polarization structure propagating with a speed that is proportional to the total intensity of the incident light. Ultimately, this method will allow the storage, retrieval and possibly the manipulation of the quantum information in atomic media. Solitons with controllable speed are constructed generalizing the theory of slow-light propagation to an integrable regime of nonlinear dynamics. For the first time, the inverse scattering method for slow-light solitons is developed. In contrast to the pioneering experimental demonstrations of slow light, we consider strong spin modulations where the non-linear dynamics of light and atoms creates polarization solitons. We also analyze how this scheme can be implemented in optical fibers doped with Lambda-atoms. In quantum-information applications, such slow-light solitons could complement the use of quantum solitons in fibres with the advantage of storing quantum information in media and complement methods for quantum memory with the advantages of non-linear dynamics, in particular the intrinsic stability of solitons. (author)

  16. Hypersonic modulation of light in three-dimensional photonic and phononic band-gap materials.

    Science.gov (United States)

    Akimov, A V; Tanaka, Y; Pevtsov, A B; Kaplan, S F; Golubev, V G; Tamura, S; Yakovlev, D R; Bayer, M

    2008-07-18

    The elastic coupling between the a-SiO2 spheres composing opal films brings forth three-dimensional periodic structures which besides a photonic stop band are predicted to also exhibit complete phononic band gaps. The influence of elastic crystal vibrations on the photonic band structure has been studied by injection of coherent hypersonic wave packets generated in a metal transducer by subpicosecond laser pulses. These studies show that light with energies close to the photonic band gap can be efficiently modulated by hypersonic waves.

  17. Defect induced structural inhomogeneity, ultraviolet light emission and near-band-edge photoluminescence broadening in degenerate In2O3 nanowires

    Science.gov (United States)

    Mukherjee, Souvik; Sarkar, Ketaki; Wiederrecht, Gary P.; Schaller, Richard D.; Gosztola, David J.; Stroscio, Michael A.; Dutta, Mitra

    2018-04-01

    We demonstrate here defect induced changes on the morphology and surface properties of indium oxide (In2O3) nanowires and further study their effects on the near-band-edge (NBE) emission, thereby showing the significant influence of surface states on In2O3 nanostructure based device characteristics for potential optoelectronic applications. In2O3 nanowires with cubic crystal structure (c-In2O3) were synthesized via carbothermal reduction technique using a gold-catalyst-assisted vapor-liquid-solid method. Onset of strong optical absorption could be observed at energies greater than 3.5 eV consistent with highly n-type characteristics due to unintentional doping from oxygen vacancy ({V}{{O}}) defects as confirmed using Raman spectroscopy. A combination of high resolution transmission electron microscopy, x-ray photoelectron spectroscopy and valence band analysis on the nanowire morphology and stoichiometry reveals presence of high-density of {V}{{O}} defects on the surface of the nanowires. As a result, chemisorbed oxygen species can be observed leading to upward band bending at the surface which corresponds to a smaller valence band offset of 2.15 eV. Temperature dependent photoluminescence (PL) spectroscopy was used to study the nature of the defect states and the influence of the surface states on the electronic band structure and NBE emission has been discussed. Our data reveals significant broadening of the NBE PL peak consistent with impurity band broadening leading to band-tailing effect from heavy doping.

  18. Efficient degradation of Methylene Blue dye over highly reactive Cu doped strontium titanate (SrTiO3) nanoparticles photocatalyst under visible light.

    Science.gov (United States)

    Rahman, Qazi Inamur; Ahmad, Musheer; Misra, Sunil Kumar; Lohani, Minaxi

    2012-09-01

    Visible light induced photocatalysts of Cu doped SrTiO3 (Cu/SrTiO3) nanoparticles with the size -60-75 nm were prepared via facile sol-gel method. The morphological, optical, crystalline properties and compositions of synthesized Cu/SrTiO3 nanoparticles were thoroughly characterized by field emission scanning electron microscopy (FE-SEM), powder X-ray diffraction (XRD), ultra violet-visible spectroscopy (UV-Vis) and energy dispersive X-ray (EDX). A significant red shift in the UV-diffused reflectance spectrum was observed and the absorption edge shifted to visible region by the Cu doping. Surprisingly, the band gap of SrTiO3 was changed from 3.2 eV drop to 2.96 eV. The photocatalytic activity of the synthesized Cu/SrTiO3 nanoparticles was demonstrated for the degradation of Methylene Blue dye under visible light irradiation. The formation of new acceptor region in Cu/SrTiO3 was responsible for high photocatalytic activity of Cu/SrTiO3 nanoparticles. The results showed that the Methylene Blue dye was degraded by -66% within time span of 2 h over the Cu/SrTiO3 nanoparticles. This dye degradation reaction followed the Langmuir-Hinshelwood kinetics and also exhibited first order reaction rate. The calculated rate constant for the degradation reaction following first order kinetics was k = 0.0016 min(-1).

  19. Biocompatibility and antibacterial activity of nitrogen-doped titanium dioxide nanoparticles for use in dental resin formulations.

    Science.gov (United States)

    Zane, Andrew; Zuo, Ranfang; Villamena, Frederick A; Rockenbauer, Antal; Digeorge Foushee, Ann Marie; Flores, Kristin; Dutta, Prabir K; Nagy, Amber

    The addition of antibacterial functionality to dental resins presents an opportunity to extend their useful lifetime by reducing secondary caries caused by bacterial recolonization. In this study, the potential efficacy of nitrogen-doped titanium dioxide nanoparticles for this purpose was determined. Nitrogen doping was carried out to extend the ultraviolet absorbance into longer wavelength blue light for increased biocompatibility. Titanium dioxide nanoparticles (approximately 20-30 nm) were synthesized with and without nitrogen doping using a sol-gel method. Ultraviolet-Visible spectroscopy indicated a band of trap states, with increasing blue light absorbance as the concentration of the nitrogen dopant increased. Electron paramagnetic resonance measurements indicated the formation of superoxide and hydroxyl radicals upon particle exposure to visible light and oxygen. The particles were significantly toxic to Escherichia coli in a dose-dependent manner after a 1-hour exposure to a blue light source (480 nm). Intracellular reactive oxygen species assay demonstrated that the particles caused a stress response in human gingival epithelial cells when exposed to 1 hour of blue light, though this did not result in detectable release of cytokines. No decrease in cell viability was observed by water-soluble tetrazolium dye assay. The results show that nitrogen-doped titanium dioxide nanoparticles have antibacterial activity when exposed to blue light, and are biocompatible at these concentrations.

  20. Crystal growth and luminescence properties of Pr-doped LuLiF4 single crystal

    International Nuclear Information System (INIS)

    Sugiyama, Makoto; Yanagida, Takayuki; Yokota, Yuui; Kurosawa, Shunsuke; Fujimoto, Yutaka; Yoshikawa, Akira

    2013-01-01

    0.1, 1, and 3% Pr (with respect to Lu) doped LuLiF 4 (Pr:LuLiF 4 ) single crystals were grown by the micro-pulling-down (μ-PD) method. Transparency of the grown crystals was higher than 70% in the visible wavelength region with some absorption bands due to Pr 3+ 4f-4f transitions. Intense absorption bands related with the Pr 3+ 4f-5d transitions were observed at 190 and 215 nm. In radioluminescence spectra, Pr 3+ 5d-4f emissions were observed at 220, 240, 340, and 405 nm. In the pulse height spectra recorded under 137 Cs γ-ray excitation, the Pr 3% doped sample showed the highest light yield of 2050 photons/MeV and the scintillation decay time of it exhibited 23 and 72 ns also excited by 137 Cs γ-ray. -- Highlights: ► 0.1, 1, and 3% Pr-doped LuLiF 4 single crystals were grown by the μ-PD method. ► Pr 3+ 5d-4f emission peaks appeared at 220, 240, 340, and 405 nm ► The Pr 3%:LuLiF 4 crystal showed the highest light yield of 2050 photons/MeV

  1. Neurofilament light chain and oligoclonal bands are prognostic biomarkers in radiologically isolated syndrome.

    Science.gov (United States)

    Matute-Blanch, Clara; Villar, Luisa M; Álvarez-Cermeño, José C; Rejdak, Konrad; Evdoshenko, Evgeniy; Makshakov, Gleb; Nazarov, Vladimir; Lapin, Sergey; Midaglia, Luciana; Vidal-Jordana, Angela; Drulovic, Jelena; García-Merino, Antonio; Sánchez-López, Antonio J; Havrdova, Eva; Saiz, Albert; Llufriu, Sara; Alvarez-Lafuente, Roberto; Schroeder, Ina; Zettl, Uwe K; Galimberti, Daniela; Ramió-Torrentà, Lluís; Robles, René; Quintana, Ester; Hegen, Harald; Deisenhammer, Florian; Río, Jordi; Tintoré, Mar; Sánchez, Alex; Montalban, Xavier; Comabella, Manuel

    2018-04-01

    The prognostic role of cerebrospinal fluid molecular biomarkers determined in early pathogenic stages of multiple sclerosis has yet to be defined. In the present study, we aimed to investigate the prognostic value of chitinase 3 like 1 (CHI3L1), neurofilament light chain, and oligoclonal bands for conversion to clinically isolated syndrome and to multiple sclerosis in 75 patients with radiologically isolated syndrome. Cerebrospinal fluid levels of CHI3L1 and neurofilament light chain were measured by enzyme-linked immunosorbent assay. Uni- and multivariable Cox regression models including as covariates age at diagnosis of radiologically isolated syndrome, number of brain lesions, sex and treatment were used to investigate associations between cerebrospinal fluid CHI3L1 and neurofilament light chain levels and time to conversion to clinically isolated syndrome and multiple sclerosis. Neurofilament light chain levels and oligoclonal bands were independent risk factors for the development of clinically isolated syndrome (hazard ratio = 1.02, P = 0.019, and hazard ratio = 14.7, P = 0.012, respectively) and multiple sclerosis (hazard ratio = 1.03, P = 0.003, and hazard ratio = 8.9, P = 0.046, respectively). The best cut-off to classify cerebrospinal fluid neurofilament light chain levels into high and low was 619 ng/l, and high neurofilament light chain levels were associated with a trend to shorter time to clinically isolated syndrome (P = 0.079) and significant shorter time to multiple sclerosis (P = 0.017). Similarly, patients with radiologically isolated syndrome presenting positive oligoclonal bands converted faster to clinically isolated syndrome and multiple sclerosis (P = 0.005 and P = 0.008, respectively). The effects of high neurofilament light chain levels shortening time to clinically isolated syndrome and multiple sclerosis were more pronounced in radiologically isolated syndrome patients with ≥37 years compared to younger patients. Cerebrospinal fluid

  2. Hydrothermal synthesis of B-doped Bi2MoO6 and its high photocatalytic performance for the degradation of Rhodamine B

    Science.gov (United States)

    Wang, Min; Han, Jin; Guo, Pengyao; Sun, Mingzhi; Zhang, Yu; Tong, Zhu; You, Meiyan; Lv, Chunmei

    2018-02-01

    B-doped Bi2MoO6 photocatalysts have been synthesized by a hydrothermal method using HBO3 as the doping source and the effect of B doping content on Bi2MoO6 structure and performance was studied. The samples were characterized with XPS, XRD, SEM, BET, UV-Vis DRS, and PL. The photocatalytic activity was evaluated by photocatalytic degradation of Rhodamine B (RhB) under visible light (λ ≥ 420 nm). The results show that all samples are orthorhombic structure. Doping Bi2MoO6 with B increases the amount of Bi5+ and oxygen vacancies, which led to stronger absorption in visible light region and lower band gap energy of the B-doped Bi2MoO6 but had little impact on morphology. B doping significantly improves the photocatalytic activity of Bi2MoO6 and the highest photocatalytic degradation rate is 89% when the initial molar ratio of B to Bi is 0.01.

  3. The effect of n- and p-type doping on coherent phonons in GaN.

    Science.gov (United States)

    Ishioka, Kunie; Kato, Keiko; Ohashi, Naoki; Haneda, Hajime; Kitajima, Masahiro; Petek, Hrvoje

    2013-05-22

    The effect of doping on the carrier-phonon interaction in wurtzite GaN is investigated by pump-probe reflectivity measurements using 3.1 eV light in near resonance with the fundamental band gap of 3.39 eV. Coherent modulations of the reflectivity due to the E2 and A1(LO) modes, as well as the 2A1(LO) overtone are observed. Doping of acceptor and donor atoms enhances the dephasing of the polar A1(LO) phonon via coupling with plasmons, with the effect of donors being stronger. Doping also enhances the relative amplitude of the coherent A1(LO) phonon with respect to that of the high-frequency E2 phonon, though it does not affect the relative intensity in Raman spectroscopic measurements. We attribute this enhanced coherent amplitude to the transient depletion field screening (TDFS) excitation mechanism, which, in addition to impulsive stimulated Raman scattering (ISRS), contributes to the generation of coherent polar phonons even for sub-band gap excitation. Because the TDFS mechanism requires photoexcitation of carriers, we argue that the interband transition is made possible at a surface with photon energies below the bulk band gap through the Franz-Keldysh effect.

  4. Oxygen effects on the interfacial electronic structure of titanyl phthalocyanine film: p-Type doping, band bending and Fermi level alignment

    International Nuclear Information System (INIS)

    Nishi, Toshio; Kanai, Kaname; Ouchi, Yukio; Willis, Martin R.; Seki, Kazuhiko

    2006-01-01

    The effect of oxygen doping on titanyl phthalocyanine (TiOPc) film was investigated by ultraviolet photoelectron spectroscopy (UPS). The electronic structure of the interface formed between TiOPc films deposited on highly oriented pyrolytic graphite (HOPG) was clearly different between the films prepared in ultrahigh vacuum (UHV) and under O 2 atmosphere (1.3 x 10 -2 Pa). The film deposited in UHV showed downward band bending characteristic of n-type semiconductor, possibly due to residual impurities working as unintentional n-type dopants. On the other hand, the film deposited under O 2 atmosphere showed upward band bending characteristic of p-type semiconductor. Such trends, including the conversion from n- to p-type, are in excellent correspondence with reported field effect transistor characteristics of TiOPc, and clearly demonstrates that bulk TiOPc film was p-doped with oxygen. In order to examine the Fermi level alignment between TiOPc film and the substrate, the energy of the highest occupied molecular orbital (HOMO) of TiOPc relative to the Fermi level of the conductive substrate was determined for various substrates. The alignment between the Fermi level of conductive substrate and Fermi level of TiOPc film at fixed energy in the bandgap was not observed for the TiOPc film prepared in UHV, possibly because of insufficient charge density in the TiOPc film. This situation was drastically changed when the TiOPc film exposed to O 2 , and clear alignment of the Fermi level fixed at 0.6 eV above the HOMO with the Fermi level of the conducting substrate was observed, probably by p-type doping effect of oxygen. These are the first direct and quantitative information about bulk oxygen doping from the viewpoint of the electronic structure. These results suggest that similar band bending with Fermi level alignment may be also achieved for other organic semiconductors under practical device conditions, and also call for caution at the comparison of experimental

  5. Synthesis of Br-doped TiO{sub 2} hollow spheres with enhanced photocatalytic activity

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Qianqian; Zhu, Shengli, E-mail: slzhu@tju.edu.cn; Liang, Yanqin; Cui, Zhenduo; Yang, Xianjin [Tianjin University, School of Materials Science and Engineering (China); Liang, Chunyong [Hebei University of Technology, Research Institute for Energy Equipment Materials (China); Inoue, Akihisa [Tianjin University, School of Materials Science and Engineering (China)

    2017-02-15

    The Br-doped hollow TiO{sub 2} photocatalysts were prepared by a simple hydrothermal process on the carbon sphere template following with calcination at 400 °C. The structure and properties of photocatalysts were characterized by X-ray diffraction, Raman spectrum, scanning electron microscope, transmission electron microscopy, N{sub 2} desorption–adsorption, UV–Vis spectroscopy, and X-ray photoelectron spectroscopy. The TiO{sub 2} hollow spheres are in diameter of 500 nm with shell thickness of 50 nm. The shell is composed of small anatase nanoparticles with size of about 10 nm. The TiO{sub 2} hollow spheres exhibit high crystalline and high surface area of 89.208 m{sup 2}/g. With increasing content of Br doping, the band gap of TiO{sub 2} hollow spheres decreased from 2.85 to 1.75 eV. The formation of impurity band in the band gap would narrow the band gap and result in the red shift of absorption edge from 395 to 517 nm, which further enhances the photocatalytic activity. The appropriate Br doping improves the photocatlytic activity significantly. The TiO{sub 2} hollow spheres with 1.55% Br doping (0.5Br-TiO{sub 2}) exhibit the highest photocatalytic activity under full light. More than 98% of RhB, MO, and MB can be photodegraded using 0.5Br-TiO{sub 2} with concentration of 10 mg/L in 40, 30, and 30 min, respectively. The degradation rate of Br-doped photocatalysts was 40% faster than undoped ones.

  6. Luminescent properties of Mn2+ doped apatite nanophosphors

    Science.gov (United States)

    Ravindranadh, K.; Ravikumar, R. V. S. S. N.; Rao, M. C.

    2016-05-01

    Nanophosphors have been extensively investigated during the last decade due to their various high-performance application potential such as lamp industry, radiation dosimetry, X-ray imaging and colour display. The synthesis of inorganic nanophosphors using both ionizing radiation (IR) or UV light represents very promising technological field. Alkaline earth nanophosphors gathered a lot of attention in past decades because they are considered to be excellent host materials. Transition-metal oxides are well known luminescent emitters in the visible spectral region. Mn2+ doped calcium-lithium hydroxyapatite (CLHA) nanophosphors were prepared by mechanochemical synthesis. The prepared samples were characterized by photoluminescence studies. Photoluminescence spectra of Mn2+ doped CLHA nanophosphors exhibited green and strong orange emission bands at 534, 577 nm respectively under the excitation wavelength of 365 nm. The CIE chromaticity coordinates were also calculated from emission spectra for Mn2+ doped CLHA nanophosphors.

  7. Luminescent properties of Mn"2"+ doped apatite nanophosphors

    International Nuclear Information System (INIS)

    Ravindranadh, K.; Rao, M. C.; Ravikumar, R. V. S. S. N.

    2016-01-01

    Nanophosphors have been extensively investigated during the last decade due to their various high-performance application potential such as lamp industry, radiation dosimetry, X-ray imaging and colour display. The synthesis of inorganic nanophosphors using both ionizing radiation (IR) or UV light represents very promising technological field. Alkaline earth nanophosphors gathered a lot of attention in past decades because they are considered to be excellent host materials. Transition-metal oxides are well known luminescent emitters in the visible spectral region. Mn"2"+ doped calcium-lithium hydroxyapatite (CLHA) nanophosphors were prepared by mechanochemical synthesis. The prepared samples were characterized by photoluminescence studies. Photoluminescence spectra of Mn"2"+ doped CLHA nanophosphors exhibited green and strong orange emission bands at 534, 577 nm respectively under the excitation wavelength of 365 nm. The CIE chromaticity coordinates were also calculated from emission spectra for Mn"2"+ doped CLHA nanophosphors.

  8. Improvement of the performance of microwave X band absorbers based on pure and doped Ba-hexaferrite

    Energy Technology Data Exchange (ETDEWEB)

    Seyyed Afghahi, Seyyed Salman [Department of Materials Science and Engineering, Imam Hossein University, Tehran (Iran, Islamic Republic of); Jafarian, Mojtaba, E-mail: m.jafarian@srbiau.ac.ir [Young Researchers and Elite Club, Science and Research Branch, Islamic Azad University, Tehran (Iran, Islamic Republic of); Salehi, Mohsen [Young Researchers and Elite Club, Science and Research Branch, Islamic Azad University, Tehran (Iran, Islamic Republic of); Atassi, Yomen [Department of Applied Physics, Higher Institute for Applied Sciences and Technology, Damascus (Syrian Arab Republic)

    2017-01-01

    Optimum Fe/Ba mole ratio is determined in doped Ba-hexaferrite prepared via mechanical activation. X-ray diffractometer (XRD), scanning electron microscope (SEM), vibrating sample magnetometer (VSM) and vector network analyzer are used to analyze phases, structures, electromagnetic and microwave absorption properties. The mole ratio of Fe/Ba=10 is detected to be optimum for doping and synthesizing the Ba-hexaferrite. In order to achieve high absorption in X band the ions of Zr{sup 4+}–Sn{sup 4+}–Ti{sup 4+}–M{sup 2+} (M=Mg{sup 2+}, Zn{sup 2+}, Cu{sup 2+}, Co{sup 2+}) are used as dopants. The results indicate the formation of single phase Ba-hexaferrite in either pure or doped compounds without any non-magnetic intermediate phases and with spherical and hexagonal morphologies respectively for the pure and doped ferrite. It is found out that BaCo{sub 2}Zr(SnTi){sub 0.5}Fe{sub 8}O{sub 19} compound has the maximum saturation magnetization (49.80 emu/g). Also the composite of BaCo{sub 2}Zr(SnTi){sub 0.5}Fe{sub 8}O{sub 19} 50 wt% in epoxy resin exhibits a minimum reflection loss of −29 dB at 12.2 GHz with 2.6 GHz bandwidth. - Highlights: • Optimum Fe/Ba mole ratio is determined in doped Ba-hexaferrite. • Formation of a single phase M-hexaferrite, pure or doped when Fe/Ba=10. • Preparation of microwave absorber of BaCo{sub 2}Zr(SnTi){sub 0.5}Fe{sub 8}O{sub 19}/epoxy resin, 50 wt%. • The absorber exhibits a minimum RL of −29 dB at 12.2 GHz with 2.6 GHz bandwidth.

  9. Characterization and improved solar light activity of vanadium doped TiO{sub 2}/diatomite hybrid catalysts

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Bin, E-mail: b.wang6@uq.edu.au [School of Chemical and Environmental Engineering, China University of Mining & Technology, Beijing 100083 (China); School of Chemistry and Molecular Biosciences, The University of Queensland, Brisbane, Qld 4072 (Australia); Zhang, Guangxin, E-mail: z111@163.com [School of Chemical and Environmental Engineering, China University of Mining & Technology, Beijing 100083 (China); Leng, Xue, E-mail: xue.leng@uq.net.au [School of Chemistry and Molecular Biosciences, The University of Queensland, Brisbane, Qld 4072 (Australia); Sun, Zhiming, E-mail: zhiming.baxia@163.com [School of Chemical and Environmental Engineering, China University of Mining & Technology, Beijing 100083 (China); Zheng, Shuilin, E-mail: shuilinzheng8@gmail.com [School of Chemical and Environmental Engineering, China University of Mining & Technology, Beijing 100083 (China)

    2015-03-21

    Highlights: • V-doped TiO{sub 2}/diatomite composite photocatalyst was synthesized. • The physiochemical property and solar light photoactivity were characterized. • The presence and influence of V ions in TiO{sub 2} matrix was systematically analyzed. • The photocatalysis for Rhodamine B were studied under solar light illumination. - Abstract: V-doped TiO{sub 2}/diatomite composite photocatalysts with different vanadium concentrations were synthesized by a modified sol–gel method. The diatomite was responsible for the well dispersion of TiO{sub 2} nanoparticles on the matrix and consequently inhibited the agglomeration. V-TiO{sub 2}/diatomite hybrids showed red shift in TiO{sub 2} absorption edge with enhanced absorption intensity. Most importantly, the dopant energy levels were formed in the TiO{sub 2} bandgap due to V{sup 4+} ions substituted to Ti{sup 4+} sites. The 0.5% V-TiO{sub 2}/diatomite photocatalyst displayed narrower bandgap (2.95 eV) compared to undoped sample (3.13 eV) and other doped samples (3.05 eV) with higher doping concentration. The photocatalytic activities of V doped TiO{sub 2}/diatomite samples for the degradation of Rhodamine B under stimulated solar light illumination were significantly improved compared with the undoped sample. In our case, V{sup 4+} ions incorporated in TiO{sub 2} lattice were responsible for increased visible-light absorption and electron transfer to oxygen molecules adsorbed on the surface of TiO{sub 2} to produce superoxide radicals ·O{sub 2}{sup –}, while V{sup 5+} species presented on the surface of TiO{sub 2} particles in the form of V{sub 2}O{sub 5} contributed to e{sup –}–h{sup +} separation. In addition, due to the combination of diatomite as support, this hybrid photocatalyst could be separated from solution quickly by natural settlement and exhibited good reusability.

  10. SU-E-T-782: Using Light Output From Doped Plastic Scintillators to Resolve the Linear Energy Transfer Spectrum of Clinical Electron Beams

    International Nuclear Information System (INIS)

    Nusrat, H; Pang, G; Ahmad, S; Keller, B; Sarfehnia, A

    2015-01-01

    Purpose: This research seeks to develop a portable, clinically-suitable linear energy transfer (LET) detector. In radiotherapy, absorbed dose is commonly used to measure the amount of delivered radiation, though, it is not a good indicator of actual biological damage. LET is the energy absorbed per unit length by a medium along charged particle’s pathway; studies have shown that LET correlates well with relative biological effectiveness (RBE). Methods: According to Birks’ law, light output of plastic scintillators is stopping-power dependent. This dependency can be varied through doping by various high-Z elements. By measuring light output signals of differently doped plastic scintillators (represented by column vector S, where each row corresponds to different scintillator material), the fluence of charged particles of a given LET (represented by column vector Φ, where each row corresponds to different LET bins) can be unfolded by S=R*Φ where R is system response matrix (each row represents a different scintillator, each column corresponds to different electron LET). Monte Carlo (MC) GEANT4.10.1 was used to evaluate ideal detector response of BC408 scintillating material doped with various concentrations of several high Z dopants. Measurements were performed to validate MC. Results: Signal for 1%-lead doped BC408 and the non-doped scintillator was measured experimentally by guiding light emitted by the scintillator (via in-house made taper, fiber system) to a PMT and then an electrometer. Simulations of 1%Pb-doped scintillator to non-doped scintillator revealed 9.3% reduction in light output for 6 MeV electrons which compared well (within uncertainty) with measurements showing 10% reduction (6MeV electrons). Conclusion: Measurements were used to validate MC simulation of light output from doped scintillators. The doping of scintillators is a viable technique to induce LET dependence. Our goal is to use this effect to resolve the LET spectrum of an incident

  11. Enhancement of organic light-emitting device performances with Hf-doped indium tin oxide anodes

    International Nuclear Information System (INIS)

    Chen, T.-H.; Liou, Y.; Wu, T.J.; Chen, J.Y.

    2004-01-01

    We have enhanced the luminance and the power efficiency of organic light-emitting devices with Hf-doped indium tin oxide (ITO) anodes instead of a CuPc layer. The Hf-doped ITO layer with a thickness of 15 nm was deposited on top of the ITO anode. Less than 10 mol. % of Hf was doped in ITO films by adjusting the sputtering rates of both sources. The highest work function of the Hf-doped ITO layers was 5.4 eV at the Hf concentrations about 10 mol. %. The driving voltages of the device have been reduced by 1 V. A luminance of 1000 cd/m 2 at 7 mA/cm 2 , a current efficiency of 14 cd/A, and a power efficiency of 6 lm/W at 6 mA/cm 2 have been achieved in the device with a 4 mol. % Hf-doped ITO layer (work function=5.2 eV). In general, the performance was about 50% better than the device with a CuPc buffer layer

  12. Effective visible light-active nitrogen and samarium co-doped BiVO{sub 4} for the degradation of organic pollutants

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Min; Niu, Chao [College of Environmental and Chemical Engineering, Shenyang Ligong University, Shenyang 110165 (China); Liu, Jun, E-mail: minwang62@msn.com [Shenyang Military General Hospital, Shenyang 110016 (China); Wang, Qianwu; Yang, Changxiu; Zheng, Haoyan [College of Environmental and Chemical Engineering, Shenyang Ligong University, Shenyang 110165 (China)

    2015-11-05

    Nitrogen and samarium co-doped BiVO{sub 4} (N–xSm–BiVO{sub 4}) nanoparticles were synthesized using a sol–gel method with a corn stem template. The physicochemical properties of the resultant N–xSm–BiVO{sub 4} particles were characterized using various methods: XPS, XRD, SEM, BET, and UV–Vis DRS analyses. The visible-light photocatalytic activity was successfully demonstrated by degrading a model dye, namely, methyl orange. The dopant content was optimized, and the nitrogen and samarium co-doped BiVO{sub 4} extended the light absorption spectrum toward the visible region, significantly enhancing the photodegradation of the model dye. The Sm and N co-doped BiVO{sub 4} exhibited the highest photocatalytic activity compared to materials with a single dopant or no dopant. The significantly enhanced photocatalytic activity of the N–Sm co-doped BiVO{sub 4} under visible-light irradiation can be attributed to the synergistic effects of the nitrogen and samarium. - Highlights: • The N–Sm codoped BiVO{sub 4} were synthesized using a sol–gel method with a corn stem template. • The N and Sm codoped BiVO{sub 4} has excellent photocatalytic activity of methyl orange degradation. • The maximum activity was observed when the molar ratio of Sm/Bi was 1.0. • The high photocatalytic activity was caused by the synergistic effects between N doping and Sm doping.

  13. Light polarization management via reflection from arrays of sub-wavelength metallic twisted bands

    Science.gov (United States)

    Nawrot, M.; Haberko, J.; Zinkiewicz, Ł.; Wasylczyk, P.

    2017-12-01

    With constant progress of nano- and microfabrication technologies, photolithography in particular, a number of sub-wavelength metallic structures have been demonstrated that can be used to manipulate light polarization. Numerical simulations of light propagation hint that helical twisted bands can have interesting polarization properties. We use three-dimensional two-photon photolithography (direct laser writing) to fabricate a few-micrometer-thick arrays of twisted bands and coat them uniformly with metal. We demonstrate that circular polarization can be generated from linear polarization upon reflection from such structures over a broad range of frequencies in the mid infrared.

  14. Effect of Thermal Annealing on Light-Induced Minority Carrier Lifetime Enhancement in Boron-Doped Czochralski Silicon

    International Nuclear Information System (INIS)

    Wang Hong-Zhe; Zheng Song-Sheng; Chen Chao

    2015-01-01

    The effect of thermal annealing on the light-induced effective minority carrier lifetime enhancement (LIE) phenomenon is investigated on the p-type Czochralski silicon (Cz-Si) wafer passivated by a phosphorus-doped silicon nitride (P-doped SiN_x) thin film. The experimental results show that low temperature annealing (below 300°C) can not only increase the effective minority carrier lifetime of P-doped SiN_x passivated boron-doped Cz-Si, but also improve the LIE phenomenon. The optimum annealing temperature is 180°C, and its corresponding effective minority carrier lifetime can be increased from initial 7.5 μs to maximum 57.7 μs by light soaking within 15 min after annealing. The analysis results of high-frequency dark capacitance-voltage characteristics reveal that the mechanism of the increase of effective minority carrier lifetime after low temperature annealing is due to the sharp enhancement of field effect passivation induced by the negative fixed charge density, while the mechanism of the LIE phenomenon after low temperature annealing is attributed to the enhancement of both field effect passivation and chemical passivation. (paper)

  15. Effect of (Nd, Ni) co-doped on the multiferroic and photocatalytic properties of BiFeO{sub 3}

    Energy Technology Data Exchange (ETDEWEB)

    Vanga, Pradeep Reddy [Nanomaterials Laboratory, Department of Physics, National Institute of Technology, Tiruchirapalli 620 015 (India); Mangalaraja, R.V. [Department of Materials Engineering, University of Concepcion, Concepcion (Chile); Ashok, M., E-mail: ashokm@nitt.edu [Nanomaterials Laboratory, Department of Physics, National Institute of Technology, Tiruchirapalli 620 015 (India)

    2015-12-15

    Highlights: • Sol–gel synthesis. • Saturation magnetization and ferroelectricity increases in Ni co-doped samples. • Conduction mechanism is different in Nd doped and (Nd, Ni) co-doped samples. • Samples show good photocatalytic activity in the presence of H{sub 2}O{sub 2}. - Abstract: Bi{sub 0.95}Nd{sub 0.05}Fe{sub 1−x}Ni{sub x}O{sub 3} (x = 0, 0.01, 0.03 and 0.05) samples are synthesized by solgel method. The phase and crystal structure of the samples are confirmed by X-ray diffraction studies, Rietveld refinement is performed to calculate the structural parameters. The reflectance spectra show bands in UV and visible region and the optical band gap is calculated using Kulbeka–Munk function. The magnetization and leakage current density are strongly influenced by doping. Different conduction mechanisms are observed in Nd doped and Ni co-doped samples. All the samples exhibit ferroelectric nature at various frequencies. Photocatalytic activities of the samples are determined by the degradation of methylene blue dye in the presence of visible light and H{sub 2}O{sub 2} which shows samples are good photo-Fenton like catalyst.

  16. Ultraviolet-light-induced processes in germanium-doped silica

    DEFF Research Database (Denmark)

    Kristensen, Martin

    2001-01-01

    A model is presented for the interaction of ultraviolet (UV) light with germanium-doped silica glass. It is assumed that germanium sites work as gates for transferring the excitation energy into the silica. In the material the excitation induces forbidden transitions to two different defect states...... which are responsible for the observed refractive index changes. Activation energies [1.85 +/-0.15 eV and 1.91 +/-0.15 eV] and rates [(2.7 +/-1.9) x 10(13) Hz and(7.2 +/-4.5) x 10(13) Hz] are determined for thermal elimination of these states. Good agreement is found with experimental results and new UV...

  17. Investigation of the physical, optical, and photocatalytic properties of CeO2/Fe-doped InVO4 composite

    Science.gov (United States)

    Chaison, Jindaporn; Wetchakun, Khatcharin; Wetchakun, Natda

    2017-12-01

    The CeO2/Fe-doped InVO4 composites with various Fe concentrations (0.5, 1.0, 2.0, 5.0 and 6.0 mol%) was synthesized by homogeneous precipitation and hydrothermal methods. The as-synthesized samples were characterized by powder X-ray diffraction (XRD), Brunauer Emmett and Teller (BET)-specific surface area, field emission scanning electron microscopy (FE-SEM), transmission electron microscopy (TEM), energy-dispersive X-ray spectroscopy (EDS), X-ray photoelectron spectroscopy (XPS), and UV-visible diffuse reflectance spectroscopy (DRS). Fe-doping into InVO4 crystal induces the distortion of the crystalline structure, the transformation of InVO4 morphology, and the new energy subband level generation of Fe between the CB and VB edge of InVO4. The electron excitation from the VB to Fe orbitals results in the decreased band gap and the extended absorption of visible-light, and thus enhances its photocatalytic performance. Visible-light-driven photocatalytic degradation of Rhodamine B (RhB) dye in water was used to evaluate the photocatalytic performance of CeO2/Fe-doped InVO4 composites. The results revealed that there is an optimum Fe (5.0 mol %) doping level. The composite with the optimum doping level obtains high photocatalytic activity of CeO2/Fe-doped InVO4 composite compared to pure CeO2 and pure InVO4 host. The increase of photocatalytic activity of CeO2/Fe-doped InVO4 composite was ascribed to the surface area, crystal defect, and band gap energy. Moreover, the photocatalytic enhancement is also because iron ions act as a trapping site, which results in the higher separation efficiency of photogenerated electrons and holes pairs in the CeO2/InVO4 composite. The evaluation of radical scavengers confirmed that hydroxyl radical was the main active species during the photodegradation of RhB. These synergistic effects are responsible for the enhanced photocatalytic activity of CeO2/Fe-doped InVO4 composite. Furthermore, the possible enhanced photocatalytic mechanism

  18. Calculations of Energy Shift of the Conduction Band-Edge in Doped and Compensated GaP

    OpenAIRE

    Endo, Tamio; Itoh, Nobuhiko; Okino, Yasushi; 遠藤, 民生; 伊藤, 伸彦; 沖野, 祥[他

    1989-01-01

    The energy shifts of the parabolic conduction band-edge at 77 and 300K with doping the Te-donor in GaP were calculated in the nondegenerate system for the two cases ; unintentional and intentional compensations, using the two models proposed by Hwang abd by Mahan. The total parabolic shift △EM(△EH), and the contributions of the exchangeinteraction △μex(△Ee) and of the Coulomb interaction △μed(△Ec) calculated by the Mahan's model (Hwang's model), increase with increasing donor concentration in...

  19. Efficient propagation of TM polarized light in photonic crystal components exhibiting band gaps for TE polarized light

    DEFF Research Database (Denmark)

    Borel, Peter Ingo; Frandsen, Lars Hagedorn; Thorhauge, Morten

    2003-01-01

    We have investigated the properties of TM polarized light in planar photonic crystal waveguide structures, which exhibit photonic band gaps for TE polarized light. Straight and bent photonic crystal waveguides and couplers have been fabricated in silicon-on-insulator material and modelled using a 3......D finite-difference-time-domain method. The simulated spectra are in excellent agreement with the experimental results, which show a propagation loss as low as 2.5±4 dB/mm around 1525 nm and bend losses at 2.9±0.2 dB for TM polarized light. We demonstrate a high coupling for TM polarized light...

  20. Tunable Visible Emission of Ag-Doped CdZnS Alloy Quantum Dots

    Directory of Open Access Journals (Sweden)

    Sethi Ruchi

    2009-01-01

    Full Text Available Abstract Highly luminescent Ag-ion-doped Cd1−xZnxS (0 ≤ x ≤ 1 alloy nanocrystals were successfully synthesized by a novel wet chemical precipitation method. Influence of dopant concentration and the Zn/Cd stoichiometric variations in doped alloy nanocrystals have been investigated. The samples were characterized by X-ray diffraction (XRD and high resolution transmission electron microscope (HRTEM to investigate the size and structure of the as prepared nanocrystals. A shift in LO phonon modes from micro-Raman investigations and the elemental analysis from the energy dispersive X-ray analysis (EDAX confirms the stoichiometry of the final product. The average crystallite size was found increasing from 1.0 to 1.4 nm with gradual increase in Ag doping. It was observed that photoluminescence (PL intensity corresponding to Ag impurity (570 nm, relative to the other two bands 480 and 520 nm that originates due to native defects, enhanced and showed slight red shift with increasing silver doping. In addition, decrease in the band gap energy of the doped nanocrystals indicates that the introduction of dopant ion in the host material influence the particle size of the nanocrystals. The composition dependent bandgap engineering in CdZnS:Ag was achieved to attain the deliberate color tunability and demonstrated successfully, which are potentially important for white light generation.

  1. High performance sulfur, nitrogen and carbon doped mesoporous anatase–brookite TiO2 photocatalyst for the removal of microcystin-LR under visible light irradiation

    International Nuclear Information System (INIS)

    El-Sheikh, Said M.; Zhang, Geshan; El-Hosainy, Hamza M.; Ismail, Adel A.; O'Shea, Kevin E.; Falaras, Polycarpos; Kontos, Athanassios G.; Dionysiou, Dionysios D.

    2014-01-01

    Graphical abstract: - Highlights: • Synthesis of tailor-designed C, N and S doped titania anatase–brookite nano-heterojunction photocatalyst. • Microcystin-LR was completely removed in the presence of doped sample under visible light. • The MC-LR degradation rate achieved by the doped sample was much better than that of un-doped sample under visible light. - Abstract: Carbon, nitrogen and sulfur (C, N and S) doped mesoporous anatase–brookite nano-heterojunction titania photocatalysts have been synthesized through a simple sol–gel method in the presence of triblock copolymer Pluronic P123. XRD and Raman spectra revealed the formation of anatase and brookite mixed phases. XPS spectra indicated the presence of C, N and S dopants. The TEM images demonstrated the formation of almost monodisperse titania nanoparticles with particle sizes of approximately 10 nm. N 2 isotherm measurements confirmed that both doped and undoped titania anatase–brookite materials have mesoporous structure. The photocatalytic degradation of the cyanotoxin microcystin-LR (MC-LR) has been investigated using these novel nanomaterials under visible light illumination. The photocatalytic efficiency of the mesoporous titania anatase–brookite photocatalyst dramatically increased with the addition of the C, N and S non-metal, achieving complete degradation (∼100%) of MC-LR. The results demonstrate the advantages of the synthetic approach and the great potential of the visible light activated C, N, and S doped titania photocatalysts for the treatment of organic micropollutants in contaminated waters under visible light

  2. Graphene–Ag/ZnO nanocomposites as high performance photocatalysts under visible light irradiation

    International Nuclear Information System (INIS)

    Ahmad, M.; Ahmed, E.; Hong, Z.L.; Khalid, N.R.; Ahmed, W.; Elhissi, A.

    2013-01-01

    Highlights: •Synthesis of Graphene–Ag/ZnO composite photocatalysts by facile one-step nontoxic approach. •Enhanced visible light absorption and efficient charge separation of ZnO by graphene modification and silver doping. •Effective utilization of photo-induced conduction band electron and valance band hole to photocatalytic degradation process. •Excellent photocatalytic performance of composites over pure ZnO. •The reduction in COD and TOC confirms the destruction of the organic molecules in the effluents along with colour removal. -- Abstract: Visible-light-responsive Graphene–Ag/ZnO nanocomposites were fabricated using a facile, one-pot, nontoxic solvothermal process for the photodegradation of organic dyes. During the solvothermal process reduction of graphene oxide and loading of Ag-doped ZnO nanoparticles on two-dimensional graphene sheets were achieved. Electron microscopy, Fourier transform infrared spectroscopy, energy dispersive X-ray analysis, BET surface area measurements, X-ray photoelectron spectroscopy and powder X-ray diffraction were used to confirm that the Ag-doped ZnO nanoparticles as randomly dispersed and effectively decorated on graphene sheets via covalent bonds between Zn and C atoms. Optical properties studied using UV–vis diffuse reflectance spectroscopy confirmed that the absorption edge of Ag-doped ZnO shifted to visible-light region with the incorporation of graphene. The as-synthesized Graphene–Ag/ZnO nanocomposites showed unprecedented photodecomposition efficiency compared to the Ag-doped ZnO, pristine ZnO and commercial ZnO under visible-light. The textile mill effluent containing organic substances was also treated using photocatalysis and the reduction in the chemical oxygen demand (COD) of the treated effluent revealed a complete destruction of the organic molecules along with colour removal. This dramatically enhanced photoactivity of the composite which is attributed to retarded charge recombination rate

  3. Modelling band-to-band tunneling current in InP-based heterostructure photonic devices

    NARCIS (Netherlands)

    van Engelen, J.P.; Shen, L.; van der Tol, J.J.G.M.; Smit, M.K.; Kockaert, P.; Emplit, P.; Gorza, S.-P.; Massar, S.

    2015-01-01

    Some semiconductor photonic devices show large discontinuities in the band structure. Short tunnel paths caused by this band structure may lead to an excessive tunneling current, especially in highly doped layers. Modelling of this tunnelling current is therefore important when designing photonic

  4. Integrated porous-silicon light-emitting diodes: A fabrication process using graded doping profiles

    International Nuclear Information System (INIS)

    Barillaro, G.; Diligenti, A.; Pieri, F.; Fuso, F.; Allegrini, M.

    2001-01-01

    A fabrication process, compatible with an industrial bipolar+complementary metal - oxide - semiconductor (MOS)+diffusion MOS technology, has been developed for the fabrication of efficient porous-silicon-based light-emitting diodes. The electrical contact is fabricated with a double n + /p doping, achieving a high current injection efficiency and thus lower biasing voltages. The anodization is performed as the last step of the process, thus reducing potential incompatibilities with industrial processes. The fabricated devices show yellow-orange electroluminescence, visible with the naked eye in room lighting. A spectral characterization of light emission is presented and briefly discussed. [copyright] 2001 American Institute of Physics

  5. SLD-MOSCNT: A new MOSCNT with step-linear doping profile in the source and drain regions

    Science.gov (United States)

    Tahne, Behrooz Abdi; Naderi, Ali

    2017-01-01

    In this paper, a new structure, step-linear doping MOSCNT (SLD-MOSCNT), is proposed to improve the performance of basic MOSCNTs. The basic structure suffers from band to band tunneling (BTBT). We show that using SLD profile for source and drain regions increases the horizontal distance between valence and conduction bands at gate to source/drain junction which reduces BTBT probability. SLD performance is compared with other similar structures which have recently been proposed to reduce BTBT such as MOSCNT with lightly-doped drain and source (LDDS), and with double-light doping in source and drain regions (DLD). The obtained results using a nonequilibrium Green’s function (NEGF) method show that the SLD-MOSCNT has the lowest leakage current, power consumption and delay time, and the highest current ratio and voltage gain. The ambipolar conduction in the proposed structure is very low and can be neglected. In addition, these structures can improve short-channel effects. Also, the investigation of cutoff frequency of the different structures shows that the SLD has the highest cutoff frequency. Device performance has been investigated for gate length from 8 to 20 nm which demonstrates all discussions regarding the superiority of the proposed structure are also valid for different channel lengths. This improvement is more significant especially for channel length less than 12 nm. Therefore, the SLD can be considered as a candidate to be used in the applications with high speed and low power consumption.

  6. Visible Light Irradiation-Mediated Drug Elution Activity of Nitrogen-Doped TiO2 Nano tubes

    International Nuclear Information System (INIS)

    Oh, S.; Moon, K.S.; Bae, J.M.; Moon, J.H.; Jin, S.

    2013-01-01

    We have developed nitrogen-doped TiO 2 nano tubes showing photo catalytic activity in the visible light region and have investigated the triggered release of antibiotics from these nano tubes in response to remote visible light irradiation. Scanning electron microscopy (SEM) observations indicated that the structure of TiO 2 nano tubes was not destroyed on the conditions of 0.05 and 0.1 M diethanolamine treatment. The results of X-ray photoelectron spectroscopy (XPS) confirmed that nitrogen, in the forms of nitrite (TiO 2 ) and nitrogen monoxide (NO), had been incorporated into the TiO 2 nano tube surface. A drug-release test revealed that the antibiotic-loaded TiO 2 nano tubes showed sustained and prolonged drug elution with the help of polylactic acid. Visible light irradiation tests showed that the antibiotic release from nitrogen-doped nano tubes was significantly higher than that from pure TiO 2 nano tubes (ρ ≨ 0.05).

  7. Enhanced photoluminescence of Si nanocrystals-doped cellulose nanofibers by plasmonic light scattering

    Energy Technology Data Exchange (ETDEWEB)

    Sugimoto, Hiroshi [Department of Electrical and Computer Engineering and Photonics Center, Boston University, 8 Saint Mary Street, Boston, Massachusetts 02215 (United States); Department of Electrical and Electronic Engineering, Graduate School of Engineering, Kobe University, Rokkodai, Nada, Kobe 657-8501 (Japan); Zhang, Ran [Division of Materials Science and Engineering, Boston University, 15 Saint Mary' s Street, Brookline, Massachusetts 02446 (United States); Reinhard, Björn M. [Department of Chemistry and Photonics Center, Boston University, Boston, Massachusetts 02215 (United States); Fujii, Minoru [Department of Electrical and Electronic Engineering, Graduate School of Engineering, Kobe University, Rokkodai, Nada, Kobe 657-8501 (Japan); Perotto, Giovanni; Marelli, Benedetto; Omenetto, Fiorenzo G. [Department of Biomedical Engineering and Department of Physics, Tufts University, 4 Colby Street, Medford, Massachusetts 02155 (United States); Dal Negro, Luca, E-mail: dalnegro@bu.edu [Department of Electrical and Computer Engineering and Photonics Center, Boston University, 8 Saint Mary Street, Boston, Massachusetts 02215 (United States); Division of Materials Science and Engineering, Boston University, 15 Saint Mary' s Street, Brookline, Massachusetts 02446 (United States)

    2015-07-27

    We report the development of bio-compatible cellulose nanofibers doped with light emitting silicon nanocrystals and Au nanoparticles via facile electrospinning. By performing photoluminescence (PL) spectroscopy as a function of excitation wavelength, we demonstrate plasmon-enhanced PL by a factor of 2.2 with negligible non-radiative quenching due to plasmon-enhanced scattering of excitation light from Au nanoparticles to silicon nanocrystals inside the nanofibers. These findings provide an alternative approach for the development of plasmon-enhanced active systems integrated within the compact nanofiber geometry. Furthermore, bio-compatible light-emitting nanofibers prepared by a cost-effective solution-based processing are very promising platforms for biophotonic applications such as fluorescence sensing and imaging.

  8. Aluminum-doped zinc oxide films as transparent conductive electrode for organic light-emitting devices

    International Nuclear Information System (INIS)

    Jiang, X.; Wong, F.L.; Fung, M.K.; Lee, S.T.

    2003-01-01

    Highly transparent conductive, aluminum-doped zinc oxide (ZnO:Al) films were deposited on glass substrates by midfrequency magnetron sputtering of metallic aluminum-doped zinc target. ZnO:Al films with surface work functions between 3.7 and 4.4 eV were obtained by varying the sputtering conditions. Organic light-emitting diodes (OLEDs) were fabricated on these ZnO:Al films. A current efficiency of higher than 3.7 cd/A, was achieved. For comparison, 3.9 cd/A was achieved by the reference OLEDs fabricated on commercial indium-tin-oxide substrates

  9. Ultraviolet Sensing by Al-doped ZnO Thin Films

    International Nuclear Information System (INIS)

    Rashid, A.R.A.; Menon, P.S.; Shaari, S.

    2011-01-01

    We report the fabrication and characterization of an ultraviolet photoconductive sensing by using Al-doped ZnO films. Undoped ZnO, 1 at.% and 2 at% of Al were prepared on quartz glass by sol gel method with annealing temperature of 500 degree Celsius for 1 hour. The presence of spherical shaped nanoparticles were detected for undoped ZnO by using FESEM. The absorption edge shifted to a lower wavelength by doping with Al and excitonic peak can be observed. The band gap values increased by adding Al. I-V curves reveal an improvement in electrical properties when the samples are illuminated by ultraviolet (UV) light with a wavelength of 365 nm. At 1 at.% of Al, the film have a larger increment in photocurrent response when illuminated with UV light compared to undoped ZnO and 2 at.% Al. The thin films have a longer recovery time than response time. (author)

  10. Facile synthesis and enhanced visible light photocatalytic activity of N and Zr co-doped TiO2 nanostructures from nanotubular titanic acid precursors

    Science.gov (United States)

    Zhang, Min; Yu, Xinluan; Lu, Dandan; Yang, Jianjun

    2013-12-01

    Zr/N co-doped TiO2 nanostructures were successfully synthesized using nanotubular titanic acid (NTA) as precursors by a facile wet chemical route and subsequent calcination. These Zr/N-doped TiO2 nanostructures made by NTA precursors show significantly enhanced visible light absorption and much higher photocatalytic performance than the Zr/N-doped P25 TiO2 nanoparticles. Impacts of Zr/N co-doping on the morphologies, optical properties, and photocatalytic activities of the NTA precursor-based TiO2 were thoroughly investigated. The origin of the enhanced visible light photocatalytic activity is discussed in detail.

  11. Ba-DOPED ZnO MATERIALS: A DFT SIMULATION TO INVESTIGATE THE DOPING EFFECT ON FERROELECTRICITY

    Directory of Open Access Journals (Sweden)

    Luis H. da S. Lacerda

    2016-04-01

    Full Text Available ZnO is a semiconductor material largely employed in the development of several electronic and optical devices due to its unique electronic, optical, piezo-, ferroelectric and structural properties. This study evaluates the properties of Ba-doped wurtzite-ZnO using quantum mechanical simulations based on the Density Functional Theory (DFT allied to hybrid functional B3LYP. The Ba-doping caused increase in lattice parameters and slight distortions at the unit cell angle in a wurtzite structure. In addition, the doping process presented decrease in the band-gap (Eg at low percentages suggesting band-gap engineering. For low doping amounts, the wavelength characteristic was observed in the visible range; whereas, for middle and high doping amounts, the wavelength belongs to the Ultraviolet range. The Ba atoms also influence the ferroelectric property, which is improved linearly with the doping amount, except for doping at 100% or wurtzite-BaO. The ferroelectric results indicate the ZnO:Ba is an strong option to replace perovskite materials in ferroelectric and flash-type memory devices.

  12. Luminescent properties of Mn{sup 2+} doped apatite nanophosphors

    Energy Technology Data Exchange (ETDEWEB)

    Ravindranadh, K.; Rao, M. C., E-mail: raomc72@gmail.com [Department of Physics, Andhra Loyola College, Vijayawada-520 008 (India); Ravikumar, R. V. S. S. N. [Department of Physics, Acharya Nagarjuna University, Guntur-522 510 (India)

    2016-05-06

    Nanophosphors have been extensively investigated during the last decade due to their various high-performance application potential such as lamp industry, radiation dosimetry, X-ray imaging and colour display. The synthesis of inorganic nanophosphors using both ionizing radiation (IR) or UV light represents very promising technological field. Alkaline earth nanophosphors gathered a lot of attention in past decades because they are considered to be excellent host materials. Transition-metal oxides are well known luminescent emitters in the visible spectral region. Mn{sup 2+} doped calcium-lithium hydroxyapatite (CLHA) nanophosphors were prepared by mechanochemical synthesis. The prepared samples were characterized by photoluminescence studies. Photoluminescence spectra of Mn{sup 2+} doped CLHA nanophosphors exhibited green and strong orange emission bands at 534, 577 nm respectively under the excitation wavelength of 365 nm. The CIE chromaticity coordinates were also calculated from emission spectra for Mn{sup 2+} doped CLHA nanophosphors.

  13. Effects of Mg doping in the quantum barriers on the efficiency droop of GaN based light emitting diodes

    International Nuclear Information System (INIS)

    Liu Yang; Yang Yongchun

    2016-01-01

    The effects of Mg doping in the quantum barriers (QBs) on the efficiency droop of GaN based light emitting diodes (LEDs) were investigated through a duel wavelength method. Barrier Mg doping would lead to the enhanced hole transportation and reduced polarization field in the quantum wells (QWs), both may reduce the efficiency droop. However, heavy Mg doping in the QBs would strongly deteriorate the crystal quality of the QWs grown after the doped QB. When increasing the injection current, the carriers would escape from the QWs between n-GaN and the doped QB and recombine non-radiatively in the QWs grown after the doped QB, leading to a serious efficiency droop. (paper)

  14. Utilization of visible to NIR light energy by Yb"+"3, Er"+"3 and Tm"+"3 doped BiVO_4 for the photocatalytic degradation of methylene blue

    International Nuclear Information System (INIS)

    Regmi, Chhabilal; Kshetri, Yuwaraj K.; Ray, Schindra Kumar; Pandey, Ramesh Prasad; Lee, Soo Wohn

    2017-01-01

    Highlights: • Lanthanide doped BiVO_4 as highly efficient upconversion and photocatalytic material. • Well defined beads like morphology for better photocatalytic activity. • Effective utilization of NIR and visible light for efficient photocatalytic degradation of methylene blue. • Nontoxic to human cells, potential for application in biological fields. - Abstract: Lanthanide-doped BiVO_4 semiconductors with efficient photocatalytic activities over a broad range of the solar light spectrum have been synthesized by the microwave hydrothermal method using ethylenediaminetetraacetic acid (EDTA). The structural, morphological, and optical properties of the as-synthesized samples were evaluated by Scanning Electron Microscopy (SEM), Transmission Electron Microscopy (TEM), X-ray powder diffraction (XRD), Raman spectroscopy, FT-IR spectroscopy, UV–vis diffuse reflectance spectroscopy (DRS), and photoluminescence spectroscopy (PL). The chemical compositions were analyzed by X-ray photoelectron spectroscopy (XPS). The toxicity of the samples was measured using Mus musculus skin melanoma cells (B16-F10 (ATCC"® CRL-6475™)) and were found to be nontoxic for human cells. The photocatalytic efficiency of the prepared samples was evaluated by methylene blue (MB) degradation. The best photocatalytic activity was shown by BiVO_4 with 6:3:3 mol percentage of Yb"+"3:Er"+"3:Tm"+"3 in all solar light spectrum. The synthesized samples possess low band gap energy and a hollow structure suitable for the better photocatalytic activity. The observed NIR photoactivity supports that the upconversion mechanism is involved in the overall photocatalytic process. Therefore, this approach provides a better alternative upconversion material for integral solar light absorption.

  15. Luminescence properties of pure and Eu-doped SrI{sub 2} crystals purified by a “Liquinert” process and grown by vertical Bridgman method

    Energy Technology Data Exchange (ETDEWEB)

    Kawai, Taketoshi, E-mail: buri@p.s.osakafu-u.ac.jp [Osaka Prefecture University, Gakuen-cho 1-1, Naka-ku, Sakai, Osaka 599-8531 (Japan); Sakuragi, Shiro; Hashimoto, Satoshi [Union Materials Inc. 1640 Oshido, Tone-machi, Ibaraki 300-1602 (Japan)

    2016-08-15

    We have prepared high quality crystals of pure SrI{sub 2} and Eu-doped SrI{sub 2} by our original “Liquinert” process and investigated their luminescence properties. Under the excitation with the 193 nm light of an ArF excimer laser, which corresponds to the wavelength above the bandgap of SrI{sub 2} bulk crystals, the pure and Eu doped SrI{sub 2} crystals exhibit no luminescence band related to defects or impurities around 560 nm. This fact indicates that the crystals prepared by the “Liquinert” process contain lower defects and/or impurities. When the Eu-doped SrI{sub 2} crystals are excited with the 325 nm light of a He–Cd laser, only the luminescence band due to the 5d→4f transition in the Eu{sup 2+} ions is observed around 425 nm. The 425 nm band observed at a forward configuration exhibits the shift to the longer wavelength side and the decrease of the luminescence intensity with increasing Eu concentration. The Eu concentration dependences of the peak wavelength and luminescence intensity are simulated on the basis of a simple self-absorption model. - Highlights: • Our original “Liquinert” process allows us to prepare high quality crystals of SrI{sub 2}. • No luminescence band related with impurities and/or defects is observed. • The 425 nm luminescence bands due to Eu{sup 2+} ions are affected by a self-absorption. • A simple self-absorption model reproduces the changes of the 425 nm bands.

  16. Optimizing white light luminescence in Dy3+-doped Lu3Ga5O12 nano-garnets

    International Nuclear Information System (INIS)

    Haritha, P.; Linganna, K.; Venkatramu, V.; Martín, I. R.; Monteseguro, V.; Rodríguez-Mendoza, U. R.; Babu, P.; León-Luis, S. F.; Jayasankar, C. K.; Lavín, V.

    2014-01-01

    Trivalent dysprosium-doped Lu 3 Ga 5 O 12 nano-garnets have been prepared by sol-gel method and characterized by X-ray powder diffraction, high-resolution transmission electron microscopy, dynamic light scattering, and laser excited spectroscopy. Under a cw 457 nm laser excitation, the white luminescence properties of Lu 3 Ga 5 O 12 nano-garnets have been studied as a function of the optically active Dy 3+ ion concentration and at low temperature. Decay curves for the 4 F 9/2 level of Dy 3+ ion exhibit non-exponential nature for all the Dy 3+ concentrations, which have been well-fitted to a generalized energy transfer model for a quadrupole-quadrupole interaction between Dy 3+ ions without diffusion. From these data, a simple rate-equations model can be applied to predict that intense white luminescence could be obtained from 1.8 mol% Dy 3+ ions-doped nano-garnets, which is in good agreement with experimental results. Chromaticity color coordinates and correlated color temperatures have been determined as a function of temperature and are found to be within the white light region for all Dy 3+ concentrations. These results indicate that 2.0 mol% Dy 3+ ions doped nano-garnet could be useful for white light emitting device applications

  17. Reinventing a p-type doping process for stable ZnO light emitting devices

    Science.gov (United States)

    Xie, Xiuhua; Li, Binghui; Zhang, Zhenzhong; Shen, Dezhen

    2018-06-01

    A tough challenge for zinc oxide (ZnO) as the ultraviolet optoelectronics materials is realizing the stable and reliable p-type conductivity. Self-compensation, coming from native donor-type point defects, is a big obstacle. In this work, we introduce a dynamic N doping process with molecular beam epitaxy, which is accomplished by a Zn, N-shutter periodic switch (a certain time shift between them for independent optimization of surface conditions). During the epitaxy, N adatoms are incorporated under the condition of (2  ×  2)  +  Zn vacancies reconstruction on a Zn-polar surface, at which oxygen vacancies (V O), the dominating compensating donors, are suppressed. With the p-ZnO with sufficient holes surviving, N concentration ~1  ×  1019 cm‑3, is employed in a p-i-n light emitting devices. Significant ultraviolet emission of electroluminescence spectra without broad green band (related to V O) at room-temperature are demonstrated. The devices work incessantly without intentional cooling for over 300 h at a luminous intensity reduction of one order of magnitude under the driving of a 10 mA continuous current, which are the demonstration for p-ZnO stability and reliability.

  18. Doping induced grain size reduction and photocatalytic performance enhancement of SrMoO{sub 4}:Bi{sup 3+}

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Yunjian, E-mail: wangyunjianmail@163.com; Xu, Hui; Shao, Congying; Cao, Jing, E-mail: caojing@mail.ipc.ac.cn

    2017-01-15

    Graphical abstract: Photocatalytic performance of SrMoO{sub 4} was greatly improved by Bi{sup 3+} doping effects, including crystalline size reduction, band gap narrowing, and lattice contraction. - Highlights: • An efficient SrMoO{sub 4} photocatalyst was fabricated by Bi{sup 3+} doping under hydrothermal condition. • Bi{sup 3+} doping effects, including crystalline size reduction, band gap narrowing, and lattice contraction were discovered in SrMoO{sub 4} nanomaterials. • The photocatalytic activity was great improved on account of Bi{sup 3+} doping effects. • Photoluminescence studies found that hydroxyl radical (·OH) is the main active species in the photocatalytic degradation process. - Abstract: Ion doping is one of the most effective ways to develop photocatalysts by creating impurity levels in the energy band structure. In this paper, novel Bi{sup 3+} doped SrMoO{sub 4} (SrMoO{sub 4}:Bi{sup 3+}) nanocrystals were prepared by a simple hydrothermal method. By systematic characterizations using x-ray diffraction, infrared spectra, UV–vis spectra, X-ray photoelectron spectroscopy and transmission electron microscopy, it is demonstrated that all the samples crystallized in a single phase of scheelite structure, and particle sizes of SrMoO{sub 4}:Bi{sup 3+} gradually decreased. The Bi{sup 3+} doped nanoparticles showed lattice contraction, and band-gap narrowing. The photocatalytic activity of the samples was measured by monitoring the degradation of methylene blue dye in an aqueous solution under UV-radiation exposure. It is found that SrMoO{sub 4}:Bi{sup 3+} showed excellent activity toward photodegradation of methylene blue solution under UV light irradiation compared to the pure SrMoO{sub 4}. These observations are interpreted in terms of the Bi{sup 3+} doping effects and the increased the surface active sites, which results in the improved the ratio of surface charge carrier transfer rate and reduced the electron–hole recombination rate. These

  19. Carrier transport assisted by dopants in doped poly(N-vinylcarbozole) light-emitting diodes

    Energy Technology Data Exchange (ETDEWEB)

    Chen Xiaohong [Institute of Optoelectronic Technology, Bejing Jiaotong University, Beijing 100044 (China); Liu Ming [Institute of Optoelectronic Technology, Bejing Jiaotong University, Beijing 100044 (China); Xu Zheng [Institute of Optoelectronic Technology, Bejing Jiaotong University, Beijing 100044 (China); Hou Yanbing [Institute of Optoelectronic Technology, Bejing Jiaotong University, Beijing 100044 (China); Teng Feng [Institute of Optoelectronic Technology, Bejing Jiaotong University, Beijing 100044 (China); Xu Xurong [Institute of Optoelectronic Technology, Bejing Jiaotong University, Beijing 100044 (China)

    2004-04-07

    We have investigated the transient electroluminescence (EL) onset of the double-layer light-emitting devices made from poly(N-vinylcarbozole) (PVK) doped with 4-(dicyanomethylene)-2-t-butyl-6(1, 1, 7, 7-tetramethyljulolidyl-9-enyl)-4H-pyran (DCJTB) and tris(8-hydroxy-quinoline) aluminium (Alq{sub 3}). For the double-layered device in which PVK was doped with 0.1 wt% DCJTB, the EL onset of PVK lags that of DCJTB and Alq{sub 3}, while the EL onset of DCJTB and Alq{sub 3} is simultaneous. However, the EL emission of the double-layered device of PVK/Alq{sub 3} originates only from Alq{sub 3}. The results show that DCJTB dopants can not only help to tunnel electrons from Alq{sub 3} zone to PVK but can also assist electrons transfer in PVK under high electric field by hopping between DCJTB molecules or from DCJTB to PVK sites at a low doping concentration of 0.1 wt%. When the DCJTB doping concentration is 4.0 wt%, the EL onset of Alq{sub 3} lags that of DCJTB. The difference in the EL onsets of DCJTB, Alq{sub 3} and PVK is attributed to the slow build-up of the internal space charge in the vicinity of the interface between PVK and Alq{sub 3}. The electron potential difference of the interface between Alq{sub 3} and PVK doped by DCJTB can be adjusted by changing the DCJTB doping concentration in double-layer devices.

  20. 380 keV proton irradiation effects on photoluminescence of Eu-doped GaN

    International Nuclear Information System (INIS)

    Okada, Hiroshi; Nakanishi, Yasuo; Wakahara, Akihiro; Yoshida, Akira; Ohshima, Takeshi

    2008-01-01

    The effect of 380 keV proton irradiation on the photoluminescence (PL) properties has been investigated for undoped and Eu-doped GaN. As the proton irradiation exceeds 1x10 13 cm -2 , a drastic decrease of PL intensity of the near band-edge emission of undoped GaN was observed. On the other hand, for Eu-doped GaN, the PL emission corresponding to the 5 D 0 → 7 F 2 transition in Eu 3+ kept the initial PL intensity after the proton irradiation up to 1x10 14 cm -2 . Present results, together with our previous report on electron irradiation results, suggest that Eu-doped GaN is a strong candidate for light emitting devices in high irradiation environment

  1. Phosphorescent Molecularly Doped Light-Emitting Diodes with Blended Polymer Host and Wide Emission Spectra

    Directory of Open Access Journals (Sweden)

    Jun Wang

    2013-01-01

    Full Text Available Stable green light emission and high efficiency organic devices with three polymer layers were fabricated using bis[2-(4′-tert-butylphenyl-1-phenyl-1H-benzoimidazole-N,C2′] iridium(III (acetylacetonate doped in blended host materials. The 1 wt% doping concentration showed maximum luminance of 7841 cd/cm2 at 25.6 V and maximum current efficiency of 9.95 cd/A at 17.2 V. The electroluminescence spectra of devices indicated two main peaks at 522 nm and 554 nm coming from phosphor dye and a full width at half maximum (FWHM of 116 nm. The characteristics of using blended host, doping iridium complex, emission spectrum, and power efficiency of organic devices were investigated.

  2. Application of an improved band-gap narrowing model to the numerical simulation of recombination properties of phosphorus-doped silicon emitters

    Energy Technology Data Exchange (ETDEWEB)

    Schumacher, J.O. [Fraunhofer Institute for Solar Energy Systems ISE, Oltmannsstr, 5, D-79100 Freiburg (Germany); Altermatt, P.P.; Heiser, G.; Aberle, A.G. [Photovoltaics Special Research Centre, University of NSW, 2052 Sydney (Australia)

    2001-01-01

    The commonly used band-gap narrowing (BGN) models for crystalline silicon do not describe heavily doped emitters with desirable precision. One of the reasons for this is that the applied BGN models were empirically derived from measurements assuming Boltzmann statistics. We apply a new BGN model derived by Schenk from quantum mechanical principles and demonstrate that carrier degeneracy and the new BGN model both substantially affect the electron-hole product within the emitter region. Simulated saturation current densities of heavily phosphorus-doped emitters, calculated with the new BGN model, are lower than results obtained with the widely used empirical BGN model of del Alamo.

  3. Visible-light sensitization of boron-doped nanocrystalline diamond through non-covalent surface modification

    Czech Academy of Sciences Publication Activity Database

    Krýsová, Hana; Vlčková Živcová, Zuzana; Bartoň, Jan; Petrák, Václav; Nesladek, M.; Cígler, Petr; Kavan, Ladislav

    2015-01-01

    Roč. 17, č. 2 (2015), s. 1165-1172 ISSN 1463-9076 R&D Projects: GA ČR GA13-31783S Institutional support: RVO:61388955 ; RVO:61388963 ; RVO:68378271 Keywords : nanocrystallines * visible-light sensitization * boron-doped diamond Subject RIV: CF - Physical ; Theoretical Chemistry Impact factor: 4.449, year: 2015

  4. Visible-light-induced photocatalysis of low-level methyl-tertiary butyl ether (MTBE) and trichloroethylene (TCE) using element-doped titanium dioxide

    Energy Technology Data Exchange (ETDEWEB)

    Jo, Wan-Kuen; Yang, Chang-Hee [Department of Environmental Engineering, Kyungpook National University, Sankeokdong, Bukgu, Daegu 702-701 (Korea)

    2010-04-15

    While the photocatalytic degradation of various volatile organic compounds in conjunction with UV light has been widely reported, visible-light-induced photocatalytic degradation of low-levels of the pollutants MTBE and TCE, which have been linked to potential adverse health effects, is rarely reported. The present study examined whether visible-light-activated S- or N-doped TiO{sub 2} photocatalytic technology can be used to control indoor concentrations of MTBE and TCE. This study consists of the characterization of the doped TiO{sub 2} powders, as well as an investigation of their photocatalytic activities. In regards to both powders, a shift of the absorbance spectrum towards the visible light region was observed. An activity test suggested that these photocatalysts exhibited reasonably high degradation efficiencies towards MTBE and TCE under visible light irradiation. The degradation efficiencies of MTBE and TCE by S- and N-doped photocatalysts exceeded 75 and 80%, respectively, at input concentrations (IC) of 0.1 ppm. Degradation efficiency was dependent on both IC and relative humidity. TCE could enhance the degradation efficiency of MTBE even under visible-light irradiation. The estimated mineralization efficiencies (MEs) were comparable to those of previous studies conducted with UV/TiO{sub 2} systems. Similar to the relative degradation efficiencies, the ME of TCE was higher in comparison to that of MTBE. The CO production measured during the photocatalytic processes represented a negligible addition to indoor CO levels. These results suggest that visible-light-activated S- and N-doped TiO{sub 2} photocatalysts may prove a useful tool in the effort to improve indoor air quality. (author)

  5. Heavy Mg-doping of (Al,Ga)N films for potential applications in deep ultraviolet light-emitting structures

    Science.gov (United States)

    Liang, Y. H.; Towe, E.

    2018-03-01

    Doping of high aluminum-containing (Al,Ga)N thin films has remained a challenging problem that has hindered progress in the development of deep ultraviolet light-emitters. This paper reports on the synthesis and use of heavily doped (Al,Ga)N films in deep ultraviolet (˜274 nm) light-emitting structures; these structures were synthesized by molecular beam epitaxy under liquid-metal growth conditions that facilitate the incorporation of extremely high density of Mg dopant impurities (up to 5 × 1019 cm-3) into aluminum-rich (Al,Ga)N thin films. Prototypical light-emitting diode structures incorporating Al0.7Ga0.3N films doped with Mg impurities that ionize to give free hole carrier concentrations of up to 6 × 1017 cm-3 exhibit external quantum efficiencies of up 0.56%; this is an improvement from previous devices made from molecular beam epitaxy-grown materials. This improvement is believed to be due to the high hole carrier concentration enabled by the relatively low activation energy of 220 meV compared to the expected values of 408-507 meV for Al0.7Ga0.3N films.

  6. Synthesis of Nb doped TiO2 nanotube/reduced graphene oxide heterostructure photocatalyst with high visible light photocatalytic activity

    Science.gov (United States)

    Niu, Xiaoyou; Yan, Weijing; Zhao, Hongli; Yang, Jingkai

    2018-05-01

    Limited by the narrowed photoresponse range and unsatisfactory recombination of photoinduced electron-hole pairs, the photocatalytic efficiency of TiO2 is still far below what is expected. Here, we initially doped TiO2 nanotubes (TNTS) by transition metal ion Nb, then it is coupled with reduced graphene oxide (rGO) to construct a heterostructure photocatalyst. The defect state presented in TiO2 leading to the formation of localized midgap states (MS) in the bandgap, which regulating the band structure of TiO2 and extending the optical absorption to visible light region. The internal charge transport and transfer behavior analyzed by electrochemical impedance spectroscopy (EIS) reveal that the coupling of rGO with TNTS results in the formation of electron transport channel in the heterostructure, which makes a great contribution to the photoinduced charge separation. As expected, the Nb-TNTS/rGO exhibits a stable and remarkably enhanced photocatalytic activity in the visible-light irradiation degradation of methylene blue (MB), up to ∼5 times with respect to TNTS, which is attributed to the effective inhibition of charge recombination, the reduction of bandgap and higher redox potential, as well as the great adsorptivity.

  7. Experimental and theoretical approach on the optical properties of zinc borotellurite glass doped with dysprosium oxide

    Science.gov (United States)

    Halimah, M. K.; Ami Hazlin, M. N.; Muhammad, F. D.

    2018-04-01

    A series of glass samples with chemical formula {[(TeO2)0.7(B2O3)0.3]0.7(ZnO)0.3}1 - x(Dy2O3)x where x = 0.01, 0.02, 0.03, 0.04 and 0.05 M fraction were synthesized through conventional melt-quenching method. The most common way to fabricate a glass material is by fusion of two or more component oxides followed by their quenching. This technique is known as melt-quenching technique. Kaur et al. (2016) [1] highlighted that the melt-quenching method able to enhance the mechanical properties like hardness and flexural strength of the material. The nature of the glass systems is proven to be amorphous based on the XRD pattern. The FTIR spectra of the glass systems confirm the existence of five bands which are assigned for the BO4, BO3, TeO4 and TeO3 vibrational groups. The density of the glass systems is increased with the addition of Dy2O3 while the molar volume is found to be inversely proportional to the density of the proposed glass. The optical properties of the glasses are determined through the absorption spectra obtained from the UV-VIS spectrophotometer. From the absorption spectra, the indirect and direct optical band gaps and the Urbach energy are found to be inversely proportional to each other. As the molar fraction of the Dy2O3 increased, the optical band gaps are observed to increase as opposed to the Urbach energy. For this glass system, the values of refractive index, electronic polarizability, oxide ion polarizability and the optical basicity are found to decrease as the addition of the dysprosium oxide is increased. From the emission spectra, two intense blue and yellow emission bands are observed, which correspond to the 4F9/2 → 6H15/2 and 4F9/2 → 6H13/2 transitions of Dy3 + ions respectively. The CIE chromaticity coordinates of the zinc borotellurite glass systems are found to be located in the white light region. Generation of white light The generation of the white light can be achieved by using two emission bands which comprise of the yellow

  8. Photoluminescence properties and energy transfer in Ce(3+) /Dy(3+) co-doped Sr(3) MgSi(2) O(8) phosphors for potential application in ultraviolet white light-emitting diodes.

    Science.gov (United States)

    Yu, Hong; Zi, Wenwen; Lan, Shi; Gan, Shucai; Zou, Haifeng; Xu, Xuechun; Hong, Guangyan

    2013-01-01

    Sr(3) MgSi(2) O(8) :Ce(3+) , Dy(3+) phosphors were prepared by a solid-state reaction technique and the photoluminescence properties were investigated. The emission spectra show not only a band due to Ce(3+) ions (403 nm) but also as a band due to Dy(3+) ions (480, 575 nm) (UV light excitation). The photoluminescence properties reveal that effective energy transfer occurs in Ce(3+) /Dy(3+) co-doped Sr(3) MgSi(2) O(8)phosphors, and the co-doping of Ce(3+) could enhance the emission intensity of Dy(3+) to a certain extent by transferring its energy to Dy(3+) . The Ce(3+) /Dy(3+) energy transfer was investigated by emission/excitation spectra, and photoluminescence decay behaviors. In Sr2.94 MgSi2 O8 :0.01Ce(3+) , 0.05Dy(3+) phosphors, the fluorescence lifetime of Dy(3+) (from 3.35 to 27.59 ns) is increased whereas that of Ce(3+) is greatly decreased (from 43.59 to 13.55 ns), and this provides indirect evidence of the Ce(3+) to Dy(3+) energy transfer. The varied emitted color of Sr(3) MgSi(2) O(8):Ce(3+) , Dy(3+) phosphors from blue to white were achieved by altering the concentration ratio of Ce(3+) and Dy(3+) . These results indicate Sr(3) MgSi(2) O(8):Ce(3+) , Dy(3+) may be as a candidate phosphor for white light-emitting diodes. Copyright © 2012 John Wiley & Sons, Ltd.

  9. Simple method of preparing nitrogen - doped nanosized TiO2 powders of high photocatalytic activity under visible light

    International Nuclear Information System (INIS)

    Nguyen Van Hung; Dang Thi Thanh Le

    2014-01-01

    Nitrogen-doped nanosized TiO 2 powders were prepared by a simple thermal treatment method of the mixture of titanium dioxide and urea. The prepared products were characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM), UV-Vis diffuse reflectance spectra (UV-Vis-DRS) and Fourier transform infrared (FT-IR) spectroscopy. The results showed that the crystal structure of N-TiO 2 was a mixture of anatase and rutile phases, and the average particle size was 31 nm calculated from XRD results. The UV-vis spectra indicate an increase in absorption of visible light when compared to undoped TiO 2 . The photocatalytic activity of nitrogen-doped TiO 2 powder was evaluated by the decomposition of methylene blue under visible light irradiation. And it was found that nitrogen-doped TiO 2 powders exhibited much higher photocatalytic activity than undoped TiO 2 . Moreover, the study also showed that, the doping N atoms improve the growth of the TiO 2 crystal and phase transformation. (author)

  10. Enhancement of tributyltin degradation under natural light by N-doped TiO{sub 2} photocatalyst

    Energy Technology Data Exchange (ETDEWEB)

    Bangkedphol, S., E-mail: sornnarin.bangkedphol@strath.ac.uk [David Livingstone Centre for Sustainability, Department of Civil Engineering, University of Strathclyde, Glasgow, Scotland G1 1XN (United Kingdom); Keenan, H.E. [David Livingstone Centre for Sustainability, Department of Civil Engineering, University of Strathclyde, Glasgow, Scotland G1 1XN (United Kingdom); Davidson, C.M. [WestCHEM, Department of Pure and Applied Chemistry, University of Strathclyde, Glasgow, Scotland G1 1XL (United Kingdom); Sakultantimetha, A. [David Livingstone Centre for Sustainability, Department of Civil Engineering, University of Strathclyde, Glasgow, Scotland G1 1XN (United Kingdom); Sirisaksoontorn, W.; Songsasen, A. [Department of Chemistry and Centre for Innovation in chemistry, Faculty of Science, Kasetsart University, Bangkok 10900 (Thailand)

    2010-12-15

    Photo-degradation of tributyltin (TBT) has been enhanced by TiO{sub 2} nanoparticles doped with nitrogen (N-doped TiO{sub 2}). The N-doped catalyst was prepared by a sol-gel reaction of titanium (IV) tetraisopropoxide with 25% ammonia solution and calcined at various temperatures from 300 to 600 deg. C. X-ray diffraction results showed that N-doped TiO{sub 2} remained amorphous at 300 deg. C. At 400 deg. C the anatase phase occurred then transformed to the rutile phase at 600 deg. C. The crystallite size calculated from Scherrer's equation was in the range of 16-51 nm which depended on the calcination temperature. N-doped TiO{sub 2} calcined at 400 deg. C which contained 0.054% nitrogen, demonstrated the highest photocatalytic degradation of TBT at 28% in 3 h under natural light when compared with undoped TiO{sub 2} and commercial photocatalyst, P25-TiO{sub 2} which gave 14.8 and 18% conversion, respectively.

  11. The nature of holes in carbon doped titania

    International Nuclear Information System (INIS)

    Rabani, J.

    2009-01-01

    Complete text of publication follows. It is well known that semiconductors (SC) produce conduction band electrons and valence band holes upon band gap excitation. The mobile species become quickly trapped at the surface. The most popular semiconductor is titanium dioxide, where the reactive surface holes (h T + ) have been recently identified as surface -O ·- (or - · OH depending on pH) covalently linked to Ti atoms. Most organic compounds are oxidized by the holes. These holes react similarly to · OH radicals and hence there is some resemblance between the photochemistry of TiO 2 and radiolysis, although in the case of TiO 2 the reactions take place on the surface. Titanium dioxide has many favorable properties for application as a photocatalyst for decontamination of water from organic materials, but is lacking absorption in the visible range, where photons are relatively cheap. In addition the quantum yield of reaction with solutes in water is too low under conditions required by industrial water treatment due to the competition between electron-hole recombination and localization at the surface. The discovery that doping of TiO 2 leads to extension of the photoactive region from UV to visible light has remarkably increased the interest in such doped TiO 2 , and a large number of materials have been developed on the basis of this strategy. We'll focus on carbon doped TiO 2 where the visible photoactivity is attributed to introduction of intragap localized carbon states or organic segments. Visible photolysis of aerated carbon doped TiO 2 (C-TiO 2 ) aqueous suspensions induces oxidation of the model compound used, namely methanol. The effects of absorbed light density, added hydrogen peroxide and added catalase on the rate of HCHO formation have been studied. The mechanism has been shown to involve oxidation of CH 3 OH by surface trapped holes, although these holes have lower energy than those formed upon UV photolysis of undoped TiO 2 . The C-TiO 2 electrons

  12. Improvement on p-type CVD diamond semiconducting properties by fabricating thin heavily-boron-doped multi-layer clusters isolated each other in unintentionally boron-doped diamond layer

    Science.gov (United States)

    Maida, Osamu; Tabuchi, Tomohiro; Ito, Toshimichi

    2017-12-01

    We have developed a new fabrication process to decrease the effective activation energy of B atoms doped in diamond without a significant decrease in the carrier mobility by fabricating heavily B-doped clusters with very low mobility which are embedded in lightly-B-doped diamond layers. The resistivities of the heavily B-doped and unintentionally B-doped diamond stacked layers had almost no temperature dependence, suggesting the presence of an impurity-band conduction in these diamond layers. On the other hand, the resistivities of the samples after the embedding growth process of the stacked layers that had been appropriately divided to innumerable small clusters by means of a suitable etching process increased with decreasing the temperature from 330 to 130 K. The effective activation energies and Hall mobilities at room temperature of both samples were estimated to be 0.21 eV, 106 cm2 V-1 s-1 for micron-sized clusters and 0.23 eV, 470 cm2 V-1 s-1 for nano-sized clusters, respectively, indicating that the diamond film structure fabricated in this work is effective for the improvement of the p-type performance for the B-doped CVD diamond.

  13. Designed Er(3+)-singly doped NaYF4 with double excitation bands for simultaneous deep macroscopic and microscopic upconverting bioimaging.

    Science.gov (United States)

    Wen, Xuanyuan; Wang, Baoju; Wu, Ruitao; Li, Nana; He, Sailing; Zhan, Qiuqiang

    2016-06-01

    Simultaneous deep macroscopic imaging and microscopic imaging is in urgent demand, but is challenging to achieve experimentally due to the lack of proper fluorescent probes. Herein, we have designed and successfully synthesized simplex Er(3+)-doped upconversion nanoparticles (UCNPs) with double excitation bands for simultaneous deep macroscopic and microscopic imaging. The material structure and the excitation wavelength of Er(3+)-singly doped UCNPs were further optimized to enhance the upconversion emission efficiency. After optimization, we found that NaYF4:30%Er(3+)@NaYF4:2%Er(3+) could simultaneously achieve efficient two-photon excitation (2PE) macroscopic tissue imaging and three-photon excitation (3PE) deep microscopic when excited by 808 nm continuous wave (CW) and 1480 nm CW lasers, respectively. In vitro cell imaging and in vivo imaging have also been implemented to demonstrate the feasibility and potential of the proposed simplex Er(3+)-doped UCNPs as bioprobe.

  14. White light generation from Dy3+-doped yttrium aluminium gallium mixed garnet nano-powders

    International Nuclear Information System (INIS)

    Praveena, R.; Balasubrahmanyam, K.; Jyothi, L.; Venkataiah, G.; Basavapoornima, Ch.; Jayasankar, C.K.

    2016-01-01

    Yttrium aluminium gallium garnet (here after referred as YAGG), Y 3 Al 5−y Ga y O 12 (where y=1.0, 2.5 and 4.0), nano-powders doped with 1.0 mol% of dysprosium (Dy 3+ ) ions were synthesised by the citrate sol–gel method. The structure, phase evolution, morphology and luminescence properties of these nano-crytalline powders were characterized by means of XRD, FTIR, Raman, electron microscopy and UV–vis spectroscopy. From the XRD results, the crystallite sizes were found to be in the range of 18–26 nm. Excitation spectra of YAGG nano-powders showed that the samples can be efficiently excited by near UV and blue LEDs. Upon excitation at 448 nm, the emission spectra of all these samples showed two bands centred at 485 (blue) and 585 nm (yellow) which corresponds to the 4 F 9/2 → 6 H 15/2 and 4 F 9/2 → 6 H 13/2 transitions of Dy 3+ ion, respectively. Intensity of blue emission was found to be stronger than the yellow emission in all the three samples. Integrated yellow to blue (Y/B) emission intensity was found to be increased with increasing the Ga content in the present YAGG host. Therefore, concentration (0.1, 1.0, 2.0 and 4.0 mol%) of Dy 3+ ions was varied in the Ga rich (Y 3 Ga 4 AlO 12 ) nano-powder. The chromaticity co-ordinates of all the prepared nano-powders were located in the white light region and also found to be dependent on Dy 3+ ion concentration and excitation wavelength. The decay curves for 4 F 9/2 level of Dy 3+ ion exhibited non-exponential nature in all the studied samples and the lifetime values remained constant (~1.0 ms) with increasing the Ga content, but were found to decrease with increasing the Dy 3+ ion concentration. The results indicated that 2.0 mol% of Dy 3+ -doped Y 3 Ga 4 AlO 12 nano-powder under 352 nm excitation is suitable for the white light emitting device applications.

  15. Simultaneous Conduction and Valence Band Quantization in Ultrashallow High-Density Doping Profiles in Semiconductors

    Science.gov (United States)

    Mazzola, F.; Wells, J. W.; Pakpour-Tabrizi, A. C.; Jackman, R. B.; Thiagarajan, B.; Hofmann, Ph.; Miwa, J. A.

    2018-01-01

    We demonstrate simultaneous quantization of conduction band (CB) and valence band (VB) states in silicon using ultrashallow, high-density, phosphorus doping profiles (so-called Si:P δ layers). We show that, in addition to the well-known quantization of CB states within the dopant plane, the confinement of VB-derived states between the subsurface P dopant layer and the Si surface gives rise to a simultaneous quantization of VB states in this narrow region. We also show that the VB quantization can be explained using a simple particle-in-a-box model, and that the number and energy separation of the quantized VB states depend on the depth of the P dopant layer beneath the Si surface. Since the quantized CB states do not show a strong dependence on the dopant depth (but rather on the dopant density), it is straightforward to exhibit control over the properties of the quantized CB and VB states independently of each other by choosing the dopant density and depth accordingly, thus offering new possibilities for engineering quantum matter.

  16. Structural and Visible-Near Infrared Optical Properties of Cr-Doped TiO2 for Colored Cool Pigments

    Science.gov (United States)

    Yuan, Le; Weng, Xiaolong; Zhou, Ming; Zhang, Qingyong; Deng, Longjiang

    2017-11-01

    Chromium-doped TiO2 pigments were synthesized via a solid-state reaction method and studied with X-ray diffraction, SEM, XPS, and UV-VIS-NIR reflectance spectroscopy. The incorporation of Cr3+ accelerates the transition from the anatase phase to the rutile phase and compresses the crystal lattice. Moreover, the particle morphology, energy gap, and reflectance spectrum of Cr-doped TiO2 pigments is affected by the crystal structure and doping concentration. For the rutile samples, some of the Cr3+ ions are oxidized to Cr4+ after sintering at a high temperature, which leads to a strong near-infrared absorption band due to the 3A2 → 3 T1 electric dipole-allowed transitions of Cr4+. And the decrease of the band gap causes an obvious redshift of the optical absorption edges as the doping concentration increases. Thus, the VIS and near-infrared average reflectance of the rutile Ti1 - x Cr x O2 sample decrease by 60.2 and 58%, respectively, when the Cr content increases to x = 0.0375. Meanwhile, the color changes to black brown. However, for the anatase Ti1 - x Cr x O2 pigments, only the VIS reflection spectrum is inhibited by forming some characteristic visible light absorption peaks of Cr3+. The morphology, band gap, and NIR reflectance are not significantly affected. Finally, a Cr-doped anatase TiO2 pigment with a brownish-yellow color and 90% near-infrared reflectance can be obtained.

  17. Synthesis and characterization of pure and Tb/Cu doped Alq3 nanostructures

    International Nuclear Information System (INIS)

    Salah, Numan; Habib, Sami S.; Khan, Zishan H.; Alharbi, Najlaa D.

    2013-01-01

    Tris (8-hydroxyquinoline) aluminum (Alq 3 ) is an organic semiconductor molecule, widely used in optoelectronic devices. In this work we report on fabricating different nanostructures of Alq 3 and characterize them using different techniques. Nanostructured films of Alq 3 were grown using the physical vapor condensation and thermal-vapor transport methods. The as synthesized films were characterized by X-ray diffraction, scanning electron microscope, energy dispersive spectroscopy and absorption spectra. Nanoparticles and nanorods/nanowires are observed in the synthesized films. Tb and Cu doped Alq 3 films were also produced and studied for their photoluminescence (PL) properties. When the original powder sample of Alq 3 was excited by 378 nm, one broad PL emission band is observed at around 515 nm. The pure nanoparticles film shows similar band with a drastic increase in the intensity by a factor of 2. This has been attributed to the large specific surface area, which might has increased the absorption and then the quantum yields. The Tb and Cu doped films show also similar band with a slight shift in the peak position to the blue region, but with further enhancement in the peak intensity, particularly that of Cu. The PL intensity of Cu doped sample is around 1.5 times stronger than that of the pure Alq 3 nanoparticles. This remarkable result on obtaining highly luminescent nanomaterial based on Cu doped Alq 3 nanoparticles film might be useful for future organic light emitting diode display devices. -- Highlights: • Films of Alq 3 nanostructures were grown using different methods. • The PL intensity of Alq 3 in its nanostructure form is enhanced by a factor of 2. • This enhancement is attributed to the large specific surface area of the nanostructures. • Films of Alq 3 nanoparticles doped with Tb and Cu showed further PL enhancement. • The Tb and Cu ions could contribute to the PL intensity of the green band of Alq3

  18. The Effect of Nitrogen-Doped ATO Nanotubes on Radical Multiplication of Buffer Media by Visible Light Photocatalysis Rather UV

    Directory of Open Access Journals (Sweden)

    Kan-Hung Hu

    2012-01-01

    Full Text Available The use of TiO2 in photodynamic therapy for the treatment of cancer has generally been studied in cultured cancer cells in serum-containing RPMI 1640 medium under visible light application rather than ultraviolet (UV light. An ordered channel array of N-doped anodic titanium dioxide (ATO has been successfully made for visible light application. ATO nanotubes in the anatase form with a length of 10 μm are more effective than nanotubes of 1.8 μm in length as a photocatalyst for radical multiplication in buffer solution by generating hydroxyl radicals and superoxide radical anions under UV-A exposure. Only the N-doped ATO is applicable to visible light photocatalysis for radical multiplication in RPMI 1640+1% FBS and acrylamide, a free radical carrier.

  19. Controlling emission and propagation of light with photonic band gap crystals

    NARCIS (Netherlands)

    Yeganegi Dastgerdi, Elahe

    2014-01-01

    In certain three-dimensional crystals, a frequency range exist for all polarizations for which light is not allowed to propagate in any direction, called the 3D photonic band gap: a frequency range where the density of vacuum fluctuations vanishes in an ideal infinitely large and perfect system. The

  20. Detecting spin polarization of nano-crystalline manganese doped zinc oxide thin film using circular polarized light

    Energy Technology Data Exchange (ETDEWEB)

    El-Sayed, H.M., E-mail: h_m_elsaid@hotmail.com

    2016-02-01

    The presence of spin polarization in Mn-doped ZnO thin film is very important for spintronic applications. Spin polarization was detected using simple method. This method depends on measuring the optical transmittance using circular polarized light in visible and near infra-red region. It was found that, there is a difference in the optical energy gap of the film for circular left and circular polarized light. For temperatures > 310 K the difference in energy gap is vanished. This result is confirmed by measuring the magnetic hysteresis of the film. This work introduces a promising method for measuring the ferromagnetism in diluted magnetic semiconductors. - Highlights: • Highly oriented c-axis of Mn-ZnO thin film doped with nitrogen is prepared. • The optical energy gap depends on the state of circularly polarized light. • The presence of spin polarization is confirmed using simple optical method. • Magnetic measurements are consistent with the results of the optical method.

  1. An Unusual Strong Visible-Light Absorption Band in Red Anatase TiO2 Photocatalyst Induced by Atomic Hydrogen-Occupied Oxygen Vacancies.

    Science.gov (United States)

    Yang, Yongqiang; Yin, Li-Chang; Gong, Yue; Niu, Ping; Wang, Jian-Qiang; Gu, Lin; Chen, Xingqiu; Liu, Gang; Wang, Lianzhou; Cheng, Hui-Ming

    2018-02-01

    Increasing visible light absorption of classic wide-bandgap photocatalysts like TiO 2 has long been pursued in order to promote solar energy conversion. Modulating the composition and/or stoichiometry of these photocatalysts is essential to narrow their bandgap for a strong visible-light absorption band. However, the bands obtained so far normally suffer from a low absorbance and/or narrow range. Herein, in contrast to the common tail-like absorption band in hydrogen-free oxygen-deficient TiO 2 , an unusual strong absorption band spanning the full spectrum of visible light is achieved in anatase TiO 2 by intentionally introducing atomic hydrogen-mediated oxygen vacancies. Combining experimental characterizations with theoretical calculations reveals the excitation of a new subvalence band associated with atomic hydrogen filled oxygen vacancies as the origin of such band, which subsequently leads to active photo-electrochemical water oxidation under visible light. These findings could provide a powerful way of tailoring wide-bandgap semiconductors to fully capture solar light. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  2. Nickel doped indium tin oxide anode and effect on dark spot development of organic light-emitting devices

    Energy Technology Data Exchange (ETDEWEB)

    Hsu, C.M. [Southern Taiwan University, Department of Electro-Optical Engineering, 1 Nan-Tai St, Yung-Kang City, Tainan County 710, Taiwan (China)], E-mail: tedhsu@mail.stut.edu.tw; Kuo, C.S.; Hsu, W.C.; Wu, W.T. [Southern Taiwan University, Department of Electro-Optical Engineering, 1 Nan-Tai St, Yung-Kang City, Tainan County 710, Taiwan (China)

    2009-01-01

    This article demonstrated that introducing nickel (Ni) atoms into an indium tin oxide (ITO) anode could considerably decrease ITO surface roughness and eliminate the formation of dark spots of an organic light-emitting device (OLED). A dramatic drop in surface roughness from 6.52 nm of an conventional ITO to 0.46 nm of an 50 nm Ni(50 W)-doped ITO anode was observed, and this led to an improved lifetime performance of an Alq3 based OLED device attributed to reduced dark spots. Reducing thickness of Ni-doped ITO anode was found to worsen surface roughness. Meanwhile, the existence of Ni atoms showed little effect on deteriorating the light-emitting mechanism of OLED devices.

  3. A detailed study on Sn4+ doped ZnO for enhanced photocatalytic degradation

    Science.gov (United States)

    Beura, Rosalin; Pachaiappan, R.; Thangadurai, P.

    2018-03-01

    The samples of Sn4+ doped (1, 5, 10, 15, 20 & 30%) ZnO nanostructures were synthesized by a low temperature hydrothermal method. Structural analysis by XRD and Raman spectroscopy showed the hexagonal wurtzite phase of ZnO and the formation of a secondary phase Zn2SnO4 beyond 10% doping of Sn4+. Microstructural analysis by TEM also confirmed the wurtzite ZnO with rod as well as particle like structure. Presence of various functional groups (sbnd OH, sbnd CH, Znsbnd O) were confirmed by FTIR. Optical properties were studied by UV-vis absorption, photoluminescence emission spectroscopies and lifetime measurement. Band gap of the undoped and Sn4+ doped ZnO were analyzed by Tauc plot and it was observed that the band gap of the materials had slightly decreased from 3.2 to 3.16 eV and again increased to 3.23 eV with respect to the increase in the doping concentration from 1 to 30%. A significant change was also noticed in the photoluminescence emission properties of ZnO i.e. increase in the intensity of NBE emission and decrease in DLE, on subject to Sn4+ doping. Average PL lifetime had increased from 29.45 ns for ZnO to 30.62 ns upon 1% Sn ion doping in ZnO. Electrical properties studied by solid state impedance spectroscopy showed that the conductivity had increased by one order of magnitude (from 7.48×10-8 to 2.21×10-7 S/cm) on Sn4+ doping. Photocatalytic experiments were performed on methyl orange (MO) as a model industrial dye under UV light irradiation for different irradiation times. The optimum Sn4+ content in order to achieve highest photocatalytic activity was found to be 1% Sn 4+ doping. The enhancement was achieved due to a decrease in the band gap favoring the generation of electron-hole pairs and the enhanced PL life time that delays the recombination of these charge carrier formation. The third reason was that the increased electrical conductivity that indicated the faster charge transfer in this material to enhance the photocatalytic activity. The Sn

  4. Thin film nano-photocatalyts with low band gap energy for gas phase degradation of p-xylene: TiO2 doped Cr, UiO66-NH2 and LaBO3 (B  =  Fe, Mn, and Co)

    Science.gov (United States)

    Loc Luu, Cam; Thuy Van Nguyen, Thi; Nguyen, Tri; Nguyen, Phung Anh; Hoang, Tien Cuong; Ha, Cam Anh

    2018-03-01

    By dip-coating technique the thin films of nano-photocatalysts TiO2, Cr-doped TiO2, LaBO3 perovskites (B  =  Fe, Mn, and Co) prepared by sol-gel method, and UiO66-NH2 prepared by a solvothermal were obtained and employed for gas phase degradation of p-xylene. Physicochemical characteristics of the catalysts were examined by the methods of BET, SEM, TEM, XRD, FT-IR, TGA, Raman and UV-vis spectroscopies. The thickness of film was determined by a Veeco-American Dektek 6M instrument. The activity of catalysts was evaluated in deep photooxidation of p-xylene in a microflow reactor at room temperature with the radiation sources of a UV (λ  =  365 nm) and LED lamps (λ  =  400-510 nm). The obtained results showed that TiO2 and TiO2 doped Cr thin films was featured by an anatase phase with nanoparticles of 10-100 nm. Doping TiO2 with 0.1%mol Cr2O3 led to reduce band gap energy from 3.01 down to 1.99 eV and extend the spectrum of photon absorption to the visible region (λ  =  622 nm). LaBO3 perovkite thin films were also featured by a crystal phase with average particle nanosize of 8-40 nm, a BET surface area of 17.6-32.7 m2 g-1 and band gap energy of 1.87-2.20 eV. UiO66-NH2 was obtained in the ball shape of 100-200 nm, a BET surface area of 576 m2 g-1 and a band gap energy of 2.83 eV. The low band gap energy nano-photocatalysts based on Cr-doped TiO2 and LaBO3 perovskites exhibited highly stable and active for photo-degradation of p-xylene in the gas phase under radiation of UV-vis light. Perovskite LaFeO3 and Cr-TiO2 thin films were the best photocatalysts with a decomposition yield being reached up to 1.70 g p-xylene/g cat.

  5. The photocatalytic degradation of methylene blue by green semiconductor films that is induced by irradiation by a light-emitting diode and visible light.

    Science.gov (United States)

    Yang, Chih-Chi; Doong, Ruey-An; Chen, Ku-Fan; Chen, Giin-Shan; Tsai, Yung-Pin

    2018-01-01

    This study develops a low-energy rotating photocatalytic contactor (LE-RPC) that has Cu-doped TiO 2 films coated on stainless-steel rotating disks, to experimentally evaluate the efficiency of the degradation and decolorization of methylene blue (MB) under irradiation from different light sources (visible 430 nm, light-emitting diode [LED] 460 nm, and LED 525 nm). The production of hydroxyl radicals is also examined. The experimental results show that the photocatalytic activity of TiO 2 that is doped with Cu 2+ is induced by illumination with visible light and an LED. More than 90% of methylene blue at a 10 mg/L concentration is degraded after illumination by visible light (430 nm) for 4 hr at 20 rpm. This study also demonstrates that the quantity of hydroxyl radicals produced is directly proportional to the light energy intensity. The greater the light energy intensity, the greater is the number of hydroxyl radicals produced. The CuO-doped anatase TiO 2 powder was successfully synthesized in this study by a sol-gel method. The catalytic abilities of the stainless-steel film were enhanced in the visible light regions. This study has successfully modified the nano-photocatalytic materials to drop band gap and has also successfully fixed the nano-photocatalytic materials on a substratum to effectively treat dye wastewater in the range of visible light. The results can be useful to the development of a low-energy rotating photocatalytic contactor for decontamination purposes.

  6. One-step synthesis of Zn doped titania nanotubes and investigation of their visible photocatalytic activity

    Energy Technology Data Exchange (ETDEWEB)

    Benjwal, Poonam [Advanced Nanoengineering Materials Laboratory, Materials Science Programme, Indian Institute of Technology Kanpur, Kanpur 208016 (India); Kar, Kamal K., E-mail: kamalkk@iitk.ac.in [Advanced Nanoengineering Materials Laboratory, Materials Science Programme, Indian Institute of Technology Kanpur, Kanpur 208016 (India); Advanced Nanoengineering Materials Laboratory, Department of Mechanical Engineering, Indian Institute of Technology Kanpur, Kanpur 208016 (India)

    2015-06-15

    Highly oriented undoped and Zn-doped titania (TiO{sub 2}) nanotubes were electrochemically fabricated by one-step anodization of titanium foil in a freshly prepared aqueous solution of zinc fluoride (ZnF{sub 2}) and ethylene glycol (EG). XRD and Raman spectroscopy unveiled the typical characteristic of anatase phase of TiO{sub 2} nanotube without any distinct dopant related peaks. SEM and AFM observation confirmed the formation of nanotubes and revealed that the Zn doping did not distort the tube morphology of TiO{sub 2}. The doping of Zn was confirmed by energy dispersive X-ray as well as X-ray photospectroscopy. Due to one-step anodization process, instead of surface doping, the Zn{sup 2+} ions were incorporated into the bulk of TiO{sub 2} nanotubes. With increasing Zn doping in nanotubes, a gradual decrease in the band gap of TiO{sub 2} (2.84 eV) was observed. Photoluminescence measurements revealed that the doping of Zn enhanced the number of charge carriers, which eventually boosted the photocatalytic activity of TiO{sub 2} nanotubes. Compared to undoped nanotubes, the as prepared Zn-doped TiO{sub 2}-nanotubes showed excellent photocatalytic activity for methylene blue degradation (reaction rate constant k = 0.19 min{sup −1}) under visible light irradiation. - Highlights: • A facile one-step anodization method is used for Zn doped TiO{sub 2}-nanotubes synthesis. • Zn{sup 2+} ions are doped into the bulk of TiO{sub 2} nanotubes. • Doped TiO{sub 2}-nanotubes unveil pure anatase phase and reduced band gap. • Compared to undoped, doped TiO{sub 2} nanotubes exhibit enhanced photocatalytic activity.

  7. Novel Na(+) doped Alq3 hybrid materials for organic light-emitting diode (OLED) devices and flat panel displays.

    Science.gov (United States)

    Bhagat, S A; Borghate, S V; Kalyani, N Thejo; Dhoble, S J

    2015-05-01

    Pure and Na(+) -doped Alq3 complexes were synthesized by a simple precipitation method at room temperature, maintaining a stoichiometric ratio. These complexes were characterized by X-ray diffraction, Fourier transform infrared (FTIR), UV/Vis absorption and photoluminescence (PL) spectra. The X-ray diffractogram exhibits well-resolved peaks, revealing the crystalline nature of the synthesized complexes, FTIR confirms the molecular structure and the completion of quinoline ring formation in the metal complex. UV/Vis absorption and PL spectra of sodium-doped Alq3 complexes exhibit high emission intensity in comparison with Alq3 phosphor, proving that when doped in Alq3 , Na(+) enhances PL emission intensity. The excitation spectra of the synthesized complexes lie in the range 242-457 nm when weak shoulders are also considered. Because the sharp excitation peak falls in the blue region of visible radiation, the complexes can be employed for blue chip excitation. The emission wavelength of all the synthesized complexes lies in the bluish green/green region ranging between 485 and 531 nm. The intensity of the emission wavelength was found to be elevated when Na(+) is doped into Alq3 . Because both the excitation and emission wavelengths fall in the visible region of electromagnetic radiation, these phosphors can also be employed to improve the power conversion efficiency of photovoltaic cells by using the solar spectral conversion principle. Thus, the synthesized phosphors can be used as bluish green/green light-emitting phosphors for organic light-emitting diodes, flat panel displays, solid-state lighting technology - a step towards the desire to reduce energy consumption and generate pollution free light. Copyright © 2014 John Wiley & Sons, Ltd.

  8. Formation of hydroxyl radicals and kinetic study of 2-chlorophenol photocatalytic oxidation using C-doped TiO2, N-doped TiO2, and C,N Co-doped TiO2 under visible light.

    Science.gov (United States)

    Ananpattarachai, Jirapat; Seraphin, Supapan; Kajitvichyanukul, Puangrat

    2016-02-01

    This work reports on synthesis, characterization, adsorption ability, formation rate of hydroxyl radicals (OH(•)), photocatalytic oxidation kinetics, and mineralization ability of C-doped titanium dioxide (TiO2), N-doped TiO2, and C,N co-doped TiO2 prepared by the sol-gel method. X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), X-ray photoelectron spectroscopy (XPS), and UV-visible spectroscopy were used to analyze the titania. The rate of formation of OH(•) for each type of titania was determined, and the OH-index was calculated. The kinetics of as-synthesized TiO2 catalysts in photocatalytic oxidation of 2-chlorophenol (2-CP) under visible light irradiation were evaluated. Results revealed that nitrogen was incorporated into the lattice of titania with the structure of O-Ti-N linkages in N-doped TiO2 and C,N co-doped TiO2. Carbon was joined to the Ti-O-C bond in the C-doped TiO2 and C,N co-doped TiO2. The 2-CP adsorption ability of C,N co-doped TiO2 and C-doped TiO2 originated from a layer composed of a complex carbonaceous mixture at the surface of TiO2. C,N co-doped TiO2 had highest formation rate of OH(•) and photocatalytic activity due to a synergistic effect of carbon and nitrogen co-doping. The order of photocatalytic activity per unit surface area was the same as that of the formation rate of OH(•) unit surface area in the following order: C,N co-doped TiO2 > C-doped TiO2 > N-doped TiO2 > undoped TiO2.

  9. Variation in band gap of lanthanum chromate by transition metals doping LaCr0.9A0.1O3 (A:Fe/Co/Ni)

    International Nuclear Information System (INIS)

    Naseem, Swaleha; Khan, Wasi; Saad, A. A.; Shoeb, M.; Ahmed, Hilal; Naqvi, A. H.; Husain, Shahid

    2014-01-01

    Transition metal (Fe, Co, Ni) doped lanthanum chromate (LaCrO 3 ) nanoparticles (NPs) were prepared by gel combustion method and calcinated at 800°C. Microstructural studies were carried by XRD and SEM/EDS techniques. The results of structural characterization show the formation of all samples in single phase without any impurity. Optical properties were studied by UV- visible and photoluminescence techniques. The energy band gap was calculated and the variation was observed with the doping of transition metal ions. Photoluminescence spectra show the emission peak maxima for the pure LaCrO 3 at about 315 nm. Influence of Fe, Co, Ni doping was studied and compared with pure lanthanum chromate nanoparticles

  10. N-doped TiO2 photo-catalyst for the degradation of 1,2-dichloroethane under fluorescent light

    International Nuclear Information System (INIS)

    Lin, Yi-Hsing; Chiu, Tang-Chun; Hsueh, Hsin-Ta; Chu, Hsin

    2011-01-01

    The photo-catalytic degradation of 1,2-dichloroethane (1, 2-DCE) using nitrogen-doped TiO 2 photo-catalysts under fluorescent light irradiation was investigated. Highly pure TiO 2 and nitrogen-doped TiO 2 were prepared by a sol-gel method and characterized by thermo-gravimetric/differential-thermal analysis (TG/DTA), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and Fourier transform infrared (FTIR) spectroscopy. The results indicate that the photo-catalysts were mainly nano-size with an anatase-phase structure. The degradation reaction of 1,2-DCE was operated under visible-light irradiation, and the photo-catalytic oxidation was conducted in a batch photo-reactor with various nitrogen doping ratios (N/Ti = 0-25 mol%). The relative humidity (RH) was controlled at 0-20% and the oxygen concentration was controlled at 0-21%. The photo-degradation with nitrogen-doped TiO 2 showed superior photo-catalytic activity compared to that for pure TiO 2 . TiO 2 doped with 15 mol% nitrogen exhibited the best photo-catalytic efficiency under the tested conditions. The products from the 1,2-DCE photo-catalytic oxidation were CO 2 and water; the by-products included dichloromethane, methyl chloride, ethyl chloride, carbon monoxide, and hydrogen chloride. The reaction pathway of 1,2-DCE indicates that oxygen molecules are the major factor that causes the degradation of 1,2-DCE in the gas phase.

  11. Cathodoluminescence properties of yttrium aluminum garnet doped with Eu2+ and Eu3+ ions

    International Nuclear Information System (INIS)

    Trofimov, A. N.; Petrova, M. A.; Zamoryanskaya, M. V.

    2007-01-01

    Yttrium aluminium garnet (YAG) doped with Eu 2+ and Eu 3+ ions is very interesting as a phosphor for conversion of light-emitting diode light for white light sources. The europium ion occupies the structural position of yttrium in yttrium aluminium garnet and has valence state Eu 3+ . Our sample was doped with Zr 4+ , which is why some of the europium ions had valence state Eu 2+ . As a rule, luminescence of Eu 3+ ions is observed in the orange and red range of spectrum. The luminescence of Eu 2+ in yttrium aluminum garnet is characterized by an intensive broad band with maximum of intensity at about 560 nm (green color). In this work, we studied the intensity and decay time dependences on europium concentration, and the influence of excitation power density on the cathodoluminescence of the sample. The most interesting result is the change of visible cathodoluminescence color in dependence on the density of the exciting power

  12. Investigation of blue luminescence in Mg doped AlN films

    Energy Technology Data Exchange (ETDEWEB)

    Sun, Xiliang; Xiong, Juan, E-mail: xiongjuana@163.com; Zhang, Weihai; Liu, Lei; Gu, Haoshuang, E-mail: guhsh@hubu.edu.cn

    2015-02-05

    Highlights: • AlN films doped with 0.8–4.4 at.% Mg were deposited by magnetron sputtering. • Structural and photoluminescence properties of Mg-doped AlN films were synthesized in detailed. • A broad blue band centered at 420 nm and 440 nm was observed in Mg-doped AlN films. • An enhancement of A1 (TO) mod and a slightly blue-shift of E2 (high) mode were observed. - Abstract: The Al{sub 1−x}Mg{sub x}N thin films were deposited on (1 0 0) silicon substrates by magnetron sputtering. The structural and photoluminescence properties of the films with varying Mg concentrations were analyzed by X-ray diffraction (XRD), scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS), Raman spectra and photoluminescence (PL), respectively. The results clearly showed that the Mg atoms successfully incorporated into AlN, while the crystal structure of the films was maintained. The Raman spectra of Al{sub 1−x}Mg{sub x}N films reveals the enhancement of A{sub 1} (TO) mode, a slightly blue-shift and an augment in FWHM for E{sub 2} (high) phonon mode with increasing Mg content, which can be associated with the deterioration of (0 0 2) orientation and the appearance of (1 0 0) orientation. A broad blue band centered at 420 nm and 440 nm was observed in Mg-doped AlN films. It was suggested that the transitions from the shallow donor level not only to the ground state but also to the excited states of the deep level was responsible for the broad blue emission band. This work indicates the AlN film for the application in lighting emission devices.

  13. Residual Energy Harvesting from Light Transients Using Hematite as an Intrinsic Photocapacitor in a Symmetrical Cell

    NARCIS (Netherlands)

    Blom, Burgert; van Leeuwen, Nicole; Xie, Mengying; Adamaki, Vana; Bowen, Chris R.; de Araujo, Moises A.; Mascaro, Lucia H.; Cameron, Petra J.; Marken, Frank

    2017-01-01

    Hematite as a sustainable photoabsorber material offers a band gap close to 2 eV and photoanode characteristics, but usually requires additional catalysts to enhance surface redox chemistry during steady state light energy harvesting for water splitting. Here, for a highly doped hematite film,

  14. Light emitting diode based on n-Zn0.94M0.06O nanorods/p-GaN (M= Cd and Ni) heterojunction under forward and reverse bias

    International Nuclear Information System (INIS)

    Echresh, Ahmad; Oeurn Chey, Chan; Zargar Shoushtari, Morteza; Nur, Omer; Willander, Magnus

    2015-01-01

    In this study, we report on the improvement in the optoelectronic properties of n-ZnO nanorods/p-GaN heterojunction. This was achieved by doping the ZnO with cadmium (Cd) and nickel (Ni). The ZnO and Zn 0.94 M 0.06 O nanorods grown hydrothermally on the p-GaN substrate were used to fabricate the light emitting diodes (LEDs). Structural measurement revealed that nanorods with wurtzite structure having a preferential orientation along the (002) c-axis. The UV–vis spectra show that the optical band gap of Zn 0.94 M 0.06 O nanorods is decreased in comparison to ZnO nanorods. Electrical measurements of the fabricated LEDs show an obvious rectifying behaviour with low threshold voltage. Electroluminescence (EL) characteristics of LEDs operated at forward and reverse bias were investigated. The EL spectra under forward bias show that doping ZnO nanorods with Cd and Ni led to an intensity enhancement of the broad peak in the visible region while the blue peak originating from the p-GaN substrate remains almost unaffected. The effect of doping was to reduce the valence band offsets and consequently more hole injection has occurred leading to the observed enhancement of the broad band in the visible region. Under reverse bias all heterojunction LEDs show the blue light emission peak originating from the p-GaN substrate. - Highlights: • The reduction of the optical band gap of the M-doped ZnO (M= Cd and Ni) nanorods results in reduction of the valence band offset of the n-Zn 0.94 M 0.06 O nanorods/p-GaN heterojunction LEDs. • Doping ZnO nanorods with Cd and Ni led to an intensity enhancement of the broad peak in the visible region under forward bias. • Under reverse bias all heterojunction LEDs show the blue light emission peak originating from the p-GaN substrate

  15. Comparison of Sn-doped and nonstoichiometric vertical-Bridgman-grown crystals of the topological insulator Bi2Te2Se

    International Nuclear Information System (INIS)

    Kushwaha, S. K.; Gibson, Q. D.; Cava, R. J.; Xiong, J.; Ong, N. P.; Pletikosic, I.; Weber, A. P.; Fedorov, A. V.; Valla, T.

    2014-01-01

    A comparative study of the properties of topological insulator Bi 2 Te 2 Se (BTS) crystals grown by the vertical Bridgeman method is described. Two defect mechanisms that create acceptor impurities to compensate for the native n-type carriers are compared: Bi excess, and light Sn doping. Both methods yield low carrier concentrations and an n-p crossover over the length of the grown crystal boules, but lower carrier concentrations and higher resistivities are obtained for the Sn-doped crystals, which reach carrier concentrations as low as 8 × 10 14  cm −3 . Further, the temperature dependent resistivities for the Sn-doped crystals display strongly activated behavior at high temperatures, with a characteristic energy of half the bulk band gap. The (001) cleaved Sn-doped BTS crystals display high quality Shubnikov de Haas (SdH) quantum oscillations due to the topological surface state electrons. Angle resolved photoelectron spectroscopy (ARPES) characterization shows that the Fermi energy (E F ) for the Sn-doped crystals falls cleanly in the surface states with no interference from the bulk bands, which the Dirac point for the surface states lies approximately 60 meV below the top of the bulk valence band maximum, and allows for a determination of the bulk and surface state carrier concentrations as a function of Energy near E F . Electronic structure calculations that compare Bi excess and Sn dopants in BTS demonstrate that Sn acts as a special impurity, with a localized impurity band that acts as a charge buffer occurring inside the bulk band gap. We propose that the special resonant level character of Sn in BTS gives rise to the exceptionally low carrier concentrations and activated resistivities observed

  16. Synthesis and characterization of pure and Tb/Cu doped Alq{sub 3} nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Salah, Numan, E-mail: nsalah@kau.edu.sa [Center of Nanotechnology, King Abdulaziz University, Jeddah 21589 (Saudi Arabia); Habib, Sami S. [Center of Nanotechnology, King Abdulaziz University, Jeddah 21589 (Saudi Arabia); Khan, Zishan H. [Department of Applied Sciences, Faculty of Engineering and Technology, Jamia Millia, Islamia (Central University), New Delhi 110025 (India); Alharbi, Najlaa D. [Center of Nanotechnology, King Abdulaziz University, Jeddah 21589 (Saudi Arabia); Sciences Faculty for Girls, King Abdulaziz University, Jeddah-21589 (Saudi Arabia)

    2013-11-15

    Tris (8-hydroxyquinoline) aluminum (Alq{sub 3}) is an organic semiconductor molecule, widely used in optoelectronic devices. In this work we report on fabricating different nanostructures of Alq{sub 3} and characterize them using different techniques. Nanostructured films of Alq{sub 3} were grown using the physical vapor condensation and thermal-vapor transport methods. The as synthesized films were characterized by X-ray diffraction, scanning electron microscope, energy dispersive spectroscopy and absorption spectra. Nanoparticles and nanorods/nanowires are observed in the synthesized films. Tb and Cu doped Alq{sub 3} films were also produced and studied for their photoluminescence (PL) properties. When the original powder sample of Alq{sub 3} was excited by 378 nm, one broad PL emission band is observed at around 515 nm. The pure nanoparticles film shows similar band with a drastic increase in the intensity by a factor of 2. This has been attributed to the large specific surface area, which might has increased the absorption and then the quantum yields. The Tb and Cu doped films show also similar band with a slight shift in the peak position to the blue region, but with further enhancement in the peak intensity, particularly that of Cu. The PL intensity of Cu doped sample is around 1.5 times stronger than that of the pure Alq{sub 3} nanoparticles. This remarkable result on obtaining highly luminescent nanomaterial based on Cu doped Alq{sub 3} nanoparticles film might be useful for future organic light emitting diode display devices. -- Highlights: • Films of Alq{sub 3} nanostructures were grown using different methods. • The PL intensity of Alq{sub 3} in its nanostructure form is enhanced by a factor of 2. • This enhancement is attributed to the large specific surface area of the nanostructures. • Films of Alq{sub 3} nanoparticles doped with Tb and Cu showed further PL enhancement. • The Tb and Cu ions could contribute to the PL intensity of the green

  17. Enhancement of exciton radiative recombination for In-doped ZnO nanowires with aluminum cylindrical micropillars

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Jen-Cheng; Liang, Yu-Ting; Cheng, Fang-Ching; Fang, Chia-Hui; Chen, Hung-Ing; Tsai, Chung-Yuan [Graduate Institute of Electro-Optical Engineering and Department of Electronic Engineering, Chang Gung University, 259 Wen-Hwa 1st Road, Kwei-Shan, Tao-Yuan 333, Taiwan, ROC (China); Jiang, Joe-Air [Department of Bio-Industrial Mechatronics Engineering, National Taiwan University, Taipei 106, Taiwan, ROC (China); Nee, Tzer-En, E-mail: neete@mail.cgu.edu.tw [Graduate Institute of Electro-Optical Engineering and Department of Electronic Engineering, Chang Gung University, 259 Wen-Hwa 1st Road, Kwei-Shan, Tao-Yuan 333, Taiwan, ROC (China)

    2013-04-15

    Zinc oxide (ZnO) has attracted intensive research effort in recent years, due to its unique properties and versatile applications. Recent work on the conservation of surface plasmon (SP) and light through period metal arrays has elucidated the propagation of SP resonance behavior. In this paper, we discuss the enhancement of exciton radiative recombination of the ZnO nanowires with Al cylindrical micropillars. Optical characterization of exciton interacted with SP resonance for indium-doped ZnO nanowires with Al cylindrical micropillars has been also investigated. From photoluminescence spectra of In-doped ZnO nanowires, it is found that the In-doped ZnO nanowires have a blue emission at 425 nm, which resulted from the ZnO band-to-band transition. Prior to the arrays of samples were annealed, a broad green emission centered at 500 nm was observed, which is attributed to ZnO native point defects. The relatively strong green band emission results from the radiative recombination that arises from the ionized oxygen vacancy and surface-defect related luminescence. Compare the In-doped ZnO on Si substrate, the enhancement of PL intensity for In-doped ZnO with deposited Al pattern film can be attributed to strong interaction with SP resonance and exciton over a broad temperature range. These experimental results indicate that Al cylindrical micropillars can significantly enhance carrier confinement and increase the quantum efficiency of In-doped ZnO/Al heterostructures due to the interaction of SP resonance between the In-doped ZnO nanowires and Al cylindrical micropillar structures, the surface-defect related luminescence, and the auxiliary test structures with variable micropillar parameters. -- Highlights: ► We examine the exciton radiative recombination of the ZnO nanowires. ► Al cylindrical micropillars affect the carrier recombination of ZnO/Al structures. ► The interaction of SP resonance between In-doped ZnO nanowire and Al pattern film. ► The carrier

  18. Research of the influence of radiation of light from emitting diodes in Fricke solution doped with photosensibilizers of low cost

    International Nuclear Information System (INIS)

    Almeida, Mayara G.O. de; Lima, Vanessa L. de; Nascimento, Rizia K. do; Santos, Patricia N.C. dos; Souza, Vivianne L.B. de

    2013-01-01

    This study aims to verify the behavior of FAM dosimeters (Fricke solution doped with methylene blue), FVM (Fricke solution doped with malachite green) and FAT (Fricke solution doped with toluidine blue) after irradiation with LED. Photodynamic therapy (PDT), the newest form of treatment for some types of cancer, is the association of a photosensitizing agent to a light source, in order to induce cancer cell death. PDT does not have a dosimetry and is usually performed with lasers, and photosensitizers imported and expensive. The red and blue were chosen for the experiments. The solution was prepared and Fricke Fricke doped solutions were prepared by adding 100 μg/mL of the photosensitizers. Subsequently, ethanol was added to the dosimeters yielding the FATA , FAME and FVMA. Doped solutions were transferred to test tubes and irradiated in acrylic phantoms. The solutions were irradiated their optical densities measured in a UV - VIS spectrophotometer. Thus, it was found that after irradiation, the dosimeters showed linear behavior showing good correlation coefficients for the samples irradiated with LEDs. The FAME when irradiated with blue light, also showed a linear correlation. However , for FVMA behavior was presented an equation of 2nd degree. Concluding that the LED irradiated dosimeters have shown sensitivity to light so that they can be used for dosimetry in PDT, and the results also show that PDT can be realized with LED photosensitizers and low cost

  19. Highly efficient red fluorescent organic light-emitting diodes by sorbitol-doped PEDOT:PSS

    Science.gov (United States)

    Zheng, Yan-Qiong; Yu, Jun-Le; Wang, Chao; Yang, Fang; Wei, Bin; Zhang, Jian-Hua; Zeng, Cheng-Hui; Yang, Yang

    2018-06-01

    This work shows a promising approach to improve device performance by optimizing the electron transport and hole injection layers for tetraphenyldibenzoperiflanthene (DBP):rubrene-based red fluorescent organic light-emitting diodes (OLEDs). We compared the effect of two electron transport layers (ETLs), and found that the rubrene/bathophenanthroline (Bphen) ETL-based OLED showed a much higher external quantum efficiency (EQE) (4.67%) than the Alq3 ETL-based OLED (EQE of 3.08%). The doping ratio of DBP in rubrene was tuned from 1.0 wt% to 4.5 wt%, and the 1.5 wt%-DBP:rubrene-based OLED demonstrated the highest EQE of 5.24% and lowest turn-on voltage of 2.2 V. Atomic force microscopy images indicated that 1.5 wt% DBP-doped rubrene film exhibited a regular strip shape, and this regular surface was favorable to the hole and electron recombination in the emitting layer. Finally, the sorbitol-doped poly(3, 4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) was used to further improve the EQE; doping with 6 wt% sorbitol achieved the highest current efficiency of 7.03 cd A‑1 and an EQE of 7.50%. The significantly enhanced performance implies that the hole injection is a limiting factor for DBP:rubrene-based red fluorescent OLEDs.

  20. Light up conversion effects in Erbium doped CaBi4Ti4O15 ceramics

    International Nuclear Information System (INIS)

    Bokolia, Renuka; Sreenivas, K.

    2013-01-01

    In recent years the rare earth doped bismuth layered structured ferroelectric (BLSF) compositions such as CaBi 4 Ti 4 O 15 , SrBi 4 Ti 4 O 15 and BaBi 4 Ti 4 O 15 ceramics have shown interesting light up-conversion emission effects. The observation of such novel effects has generated a lot of scientific interest, and there is a need to further improve their dielectric, piezoelectric and light up-conversion properties. In the present study, Erbium doped CaBi 4 Ti 4 O 15 (CBT), and SrBi 4 Ti 4 O 15 (SBT) ferroelectric ceramic have been prepared by the conventional solid state reaction method. Formation of single phase material is confirmed by X-Ray Diffraction (XRD), and changes occurring in the lattice parameters with Erbium dopant are analysed. Room temperature dielectric studies and ferroelectric studies will be discussed. (author)

  1. X-ray photoelectron spectroscopy investigations of band offsets in Ga0.02Zn0.98O/ZnO heterojunction for UV photodetectors

    Science.gov (United States)

    Singh, Karmvir; Rawal, Ishpal; Punia, Rajesh; Dhar, Rakesh

    2017-10-01

    Here, we report the valence and conduction band offset measurements in pure ZnO and the Ga0.02Zn0.98O/ZnO heterojunction by X-Ray photoelectron spectroscopy studies for UV photodetector applications. For detailed investigations on the band offsets and UV photodetection behavior of Ga0.02Zn0.98O/ZnO heterostructures, thin films of pristine ZnO, Ga-doped ZnO (Ga0.02Zn0.98O), and heterostructures of Ga-doped ZnO with ZnO (Ga0.02Zn0.98O/ZnO) were deposited using a pulsed laser deposition technique. The deposited thin films were characterized by X-ray diffraction, atomic force microscopy, and UV-Vis spectroscopy. X-ray photoelectron spectroscopy studies were carried out on all the thin films for the investigation of valence and conduction band offsets. The valence band was found to be shifted by 0.28 eV, while the conduction band has a shifting of -0.272 eV in the Ga0.02Zn0.98O/ZnO heterojunction as compared to pristine ZnO thin films. All the three samples were analyzed for photoconduction behavior under UVA light of the intensity of 3.3 mW/cm2, and it was observed that the photoresponse of pristine ZnO (19.75%) was found to increase with 2 wt. % doping of Ga (22.62%) and heterostructured thin films (29.10%). The mechanism of UV photodetection in the deposited samples has been discussed in detail, and the interaction of chemisorbed oxygen on the ZnO surface with holes generated by UV light exposure has been the observed mechanism for the change in electrical conductivity responsible for UV photoresponse on the present deposited ZnO films.

  2. Degradation of selected industrial dyes using Mg-doped TiO2 polyscales under natural sun light as an alternative driving energy

    Science.gov (United States)

    Shivaraju, H. P.; Midhun, G.; Anil Kumar, K. M.; Pallavi, S.; Pallavi, N.; Behzad, Shahmoradi

    2017-11-01

    Designing photocatalytic materials with modified functionalities for the utilization of renewable energy sources as an alternative driving energy has attracted much attention in the area of sustainable wastewater treatment applications. Catalyst-assisted advanced oxidation process is an emerging treatment technology for organic pollutants and toxicants in industrial wastewater. Preparation of visible-light-responsive photocatalyst such as Mg-doped TiO2 polyscales was carried out under mild sol-gel technique. Mg-doped TiO2 polyscales were characterized by powder XRD, SEM, FTIR, and optical and photocatalytic activity techniques. The Mg-doped TiO2 showed a mixed phase of anatase and rutile with an excellent crystallinity, structural elucidations, polyscales morphology, consequent shifting of bandgap energy and adequate photocatalytic activities under visible range of light. Mg-doped TiO2 polyscales were investigated for their efficiencies in the degradation of most commonly used industrial dyes in the real-time textile wastewater. Mg-doped TiO2 polyscales showed excellent photocatalytic degradation efficiency in both model industrial dyes (65-95%) and textile wastewater (92%) under natural sunlight as an alternative and renewable driving energy.

  3. Highly Efficient F, Cu doped TiO2 anti-bacterial visible light active photocatalytic coatings to combat hospital-acquired infections

    Science.gov (United States)

    Leyland, Nigel S.; Podporska-Carroll, Joanna; Browne, John; Hinder, Steven J.; Quilty, Brid; Pillai, Suresh C.

    2016-04-01

    Bacterial infections are a major threat to the health of patients in healthcare facilities including hospitals. One of the major causes of patient morbidity is infection with Staphylococcus aureus. One of the the most dominant nosocomial bacteria, Methicillin Resistant Staphylococcus aureus (MRSA) have been reported to survive on hospital surfaces (e.g. privacy window glasses) for up to 5 months. None of the current anti-bacterial technology is efficient in eliminating Staphylococcus aureus. A novel transparent, immobilised and superhydrophilic coating of titanium dioxide, co-doped with fluorine and copper has been prepared on float glass substrates. Antibacterial activity has demonstrated (by using Staphylococcus aureus), resulting from a combination of visible light activated (VLA) photocatalysis and copper ion toxicity. Co-doping with copper and fluorine has been shown to improve the performance of the coating, relative to a purely fluorine-doped VLA photocatalyst. Reductions in bacterial population of log10 = 4.2 under visible light irradiation and log10 = 1.8 in darkness have been achieved, compared with log10 = 1.8 under visible light irradiation and no activity, for a purely fluorine-doped titania. Generation of reactive oxygen species from the photocatalytic coatings is the major factor that significantly reduces the bacterial growth on the glass surfaces.

  4. Single component Mn-doped perovskite-related CsPb2ClxBr5-x nanoplatelets with a record white light quantum yield of 49%: a new single layer color conversion material for light-emitting diodes.

    Science.gov (United States)

    Wu, Hao; Xu, Shuhong; Shao, Haibao; Li, Lang; Cui, Yiping; Wang, Chunlei

    2017-11-09

    Single component nanocrystals (NCs) with white fluorescence are promising single layer color conversion media for white light-emitting diodes (LED) because the undesirable changes of chromaticity coordinates for the mixture of blue, green and red emitting NCs can be avoided. However, their practical applications have been hindered by the relative low photoluminescence (PL) quantum yield (QY) for traditional semiconductor NCs. Though Mn-doped perovskite nanocube is a potential candidate, it has been unable to realize a white-light emission to date. In this work, the synthesis of Mn-doped 2D perovskite-related CsPb 2 Cl x Br 5-x nanoplatelets with a pure white emission from a single component is reported. Unlike Mn-doped perovskite nanocubes with insufficient energy transfer efficiency, the current reported Mn-doped 2D perovskite-related CsPb 2 Cl x Br 5-x nanoplatelets show a 10 times higher energy transfer efficiency from perovskite to Mn impurities at the required emission wavelengths (about 450 nm for perovskite emission and 580 nm for Mn emission). As a result, the Mn/perovskite dual emission intensity ratio surprisingly elevates from less than 0.25 in case of Mn-doped nanocubes to 0.99 in the current Mn-doped CsPb 2 Cl x Br 5-x nanoplatelets, giving rise to a pure white light emission with Commission Internationale de l'Eclairage (CIE) color coordinates of (0.35, 0.32). More importantly, the highest PL QY for Mn-doped perovskite-related CsPb 2 Cl x Br 5-x nanoplatelets is up to 49%, which is a new record for white-emitting nanocrystals with single component. These highly luminescent nanoplatelets can be blended with polystyrene (PS) without changing the white light emission but dramatically improving perovskite stability. The perovskite-PS composites are available not only as a good solution processable coating material for assembling LED, but also as a superior conversion material for achieving white light LED with a single conversion layer.

  5. Photocatalytic activity of tin-doped TiO{sub 2} film deposited via aerosol assisted chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Chua, Chin Sheng, E-mail: cschua@simtech.a-star.edu.sg [School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 (Singapore); Singapore Institute of Manufacturing Technology, 71 Nanyang Drive, 638075 (Singapore); Tan, Ooi Kiang; Tse, Man Siu [School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 (Singapore); Ding, Xingzhao [Singapore Institute of Manufacturing Technology, 71 Nanyang Drive, 638075 (Singapore)

    2013-10-01

    Tin-doped TiO{sub 2} films are deposited via aerosol assisted chemical vapor deposition using a precursor mixture composing of titanium tetraisopropoxide and tetrabutyl tin. The amount of tin doping in the deposited films is controlled by the volume % concentration ratio of tetrabutyl tin over titanium tetraisopropoxide in the mixed precursor solution. X-ray diffraction analysis results reveal that the as-deposited films are composed of pure anatase TiO{sub 2} phase. Red-shift in the absorbance spectra is observed attributed to the introduction of Sn{sup 4+} band states below the conduction band of TiO{sub 2}. The effect of tin doping on the photocatalytic property of TiO{sub 2} films is studied through the degradation of stearic acid under UV light illumination. It is found that there is a 10% enhancement on the degradation rate of stearic acid for the film with 3.8% tin doping in comparison with pure TiO{sub 2} film. This improvement of photocatalytic performance with tin incorporation could be ascribed to the reduction of electron-hole recombination rate through charge separation and an increased amount of OH radicals which are crucial for the degradation of stearic acid. Further increase in tin doping results in the formation of recombination site and large anatase grains, which leads to a decrease in the degradation rate. - Highlights: ► Deposition of tin-doped TiO{sub 2} film via aerosol assisted chemical vapor deposition ► Deposited anatase films show red-shifted in UV–vis spectrum with tin-dopants. ► Photoactivity improves at low tin concentration but reduces at higher concentration. ► Improvement in photoactivity due to bandgap narrowing from Sn{sup 4+} band states ► Maximum photoactivity achieved occurs for films with 3.8% tin doping.

  6. Enhanced Photocatalytic Activity of ZrO2-SiO2 Nanoparticles by Platinum Doping

    Directory of Open Access Journals (Sweden)

    Mohammad W. Kadi

    2013-01-01

    Full Text Available ZrO2-SiO2 mixed oxides were prepared via the sol-gel method. Photo-assisted deposition was utilized for doping the prepared mixed oxide with 0.1, 0.2, 0.3, and 0.4 wt% of Pt. XRD spectra showed that doping did not result in the incorporation of Pt within the crystal structure of the material. UV-reflectance spectrometry showed that the band gap of ZrO2-SiO2 decreased from 3.04 eV to 2.48 eV with 0.4 wt% Pt doping. The results show a specific surface area increase of 20%. Enhanced photocatalysis of Pt/ZrO2-SiO2 was successfully tested on photo degradation of cyanide under illumination of visible light. 100% conversion was achieved within 20 min with 0.3 wt% of Pt doped ZrO2-SiO2.

  7. Detection of Time Lags between Quasar Continuum Emission Bands Based On Pan-STARRS Light Curves

    Energy Technology Data Exchange (ETDEWEB)

    Jiang, Yan-Fei [Kavli Institute for Theoretical Physics, University of California, Santa Barbara, CA 93106 (United States); Green, Paul J.; Pancoast, Anna; MacLeod, Chelsea L. [Harvard-Smithsonian Center for Astrophysics, 60 Garden Street, Cambridge, MA 02138 (United States); Greene, Jenny E. [Department of Astrophysical Sciences, Princeton University, Princeton, NJ 08544 (United States); Morganson, Eric; Shen, Yue [Department of Astronomy, University of Illinois at Urbana-Champaign, Urbana, IL 61801 (United States); Anderson, Scott F.; Ruan, John J. [Department of Astronomy, University of Washington, Box 351580, Seattle, WA 98195 (United States); Brandt, W. N.; Grier, C. J. [Department of Astronomy and Astrophysics, The Pennsylvania State University, University Park, PA 16802 (United States); Rix, H.-W. [Max Planck Institute for Astronomy, Königstuhl 17, D-69117 Heidelberg (Germany); Protopapas, Pavlos [Institute for Applied Computational Science, John A. Paulson School of Engineering and Applied Sciences, Harvard University, Cambridge, MA 02138 (United States); Scott, Caroline [Astrophysics, Imperial College London, Blackett Laboratory, London SW7 2AZ (United Kingdom); Burgett, W. S.; Hodapp, K. W.; Huber, M. E.; Kaiser, N.; Kudritzki, R. P.; Magnier, E. A. [Institute for Astronomy, University of Hawaii, 2680 Woodlawn Drive, Honolulu HI 96822 (United States); and others

    2017-02-20

    We study the time lags between the continuum emission of quasars at different wavelengths, based on more than four years of multi-band ( g , r , i , z ) light curves in the Pan-STARRS Medium Deep Fields. As photons from different bands emerge from different radial ranges in the accretion disk, the lags constrain the sizes of the accretion disks. We select 240 quasars with redshifts of z ≈ 1 or z ≈ 0.3 that are relatively emission-line free. The light curves are sampled from day to month timescales, which makes it possible to detect lags on the scale of the light crossing time of the accretion disks. With the code JAVELIN , we detect typical lags of several days in the rest frame between the g band and the riz bands. The detected lags are ∼2–3 times larger than the light crossing time estimated from the standard thin disk model, consistent with the recently measured lag in NGC 5548 and microlensing measurements of quasars. The lags in our sample are found to increase with increasing luminosity. Furthermore, the increase in lags going from g − r to g − i and then to g − z is slower than predicted in the thin disk model, particularly for high-luminosity quasars. The radial temperature profile in the disk must be different from what is assumed. We also find evidence that the lags decrease with increasing line ratios between ultraviolet Fe ii lines and Mg ii, which may point to changes in the accretion disk structure at higher metallicity.

  8. Band structure of one-dimensional doped photonic crystal with three level atoms using the Fresnel coefficients method

    Science.gov (United States)

    Jafari, A.; Rahmat, A.; Bakkeshizadeh, S.

    2018-01-01

    We consider a one-dimensional photonic crystal (1DPC) composed of double-layered dielectrics. Electric permittivity and magnetic permeability of this crystal depends on the incident electromagnetic wave frequency. We suppose that three level atoms have been added to the second layer of each dielectric and this photonic crystal (PC) has been doped. These atoms can be added to the layer with different rates. In this paper, we have calculated and compared the band structure of the mentioned PC considering the effect of added atoms to the second layer with different rates through the Fresnel coefficients method. We find out that according to the effective medium theory, the electric permittivity of the second layer changes. Also the band structure of PC for both TE and TM polarizations changes, too. The width of bandgaps related to “zero averaged refractive index” and “Bragg” increases. Moreover, new gap branches appear in new frequencies at both TE and TM polarizations. In specific state, two branches of “zero permittivity” gap appear in the PC band structure related to TM polarization. With increasing the amount of the filling rate of total volume with three level atoms, we observe a lot of changes in the PC band structure.

  9. Strongly correlated impurity band superconductivity in diamond: X-ray spectroscopic evidence

    Directory of Open Access Journals (Sweden)

    G. Baskaran

    2006-01-01

    Full Text Available In a recent X-ray absorption study in boron doped diamond, Nakamura et al. have seen a well isolated narrow boron impurity band in non-superconducting samples and an additional narrow band at the chemical potential in a superconducting sample. We interpret the beautiful spectra as evidence for upper Hubbard band of a Mott insulating impurity band and an additional metallic 'mid-gap band' of a conducting 'self-doped' Mott insulator. This supports the basic framework of a recent theory of the present author of strongly correlated impurity band superconductivity (impurity band resonating valence bond, IBRVB theory in a template of a wide-gap insulator, with no direct involvement of valence band states.

  10. Characterization and improved solar light activity of vanadium doped TiO2/diatomite hybrid catalysts.

    Science.gov (United States)

    Wang, Bin; Zhang, Guangxin; Leng, Xue; Sun, Zhiming; Zheng, Shuilin

    2015-03-21

    V-doped TiO2/diatomite composite photocatalysts with different vanadium concentrations were synthesized by a modified sol-gel method. The diatomite was responsible for the well dispersion of TiO2 nanoparticles on the matrix and consequently inhibited the agglomeration. V-TiO2/diatomite hybrids showed red shift in TiO2 absorption edge with enhanced absorption intensity. Most importantly, the dopant energy levels were formed in the TiO2 bandgap due to V(4+) ions substituted to Ti(4+) sites. The 0.5% V-TiO2/diatomite photocatalyst displayed narrower bandgap (2.95 eV) compared to undoped sample (3.13 eV) and other doped samples (3.05 eV) with higher doping concentration. The photocatalytic activities of V doped TiO2/diatomite samples for the degradation of Rhodamine B under stimulated solar light illumination were significantly improved compared with the undoped sample. In our case, V(4+) ions incorporated in TiO2 lattice were responsible for increased visible-light absorption and electron transfer to oxygen molecules adsorbed on the surface of TiO2 to produce superoxide radicals ˙O2(-), while V(5+) species presented on the surface of TiO2 particles in the form of V2O5 contributed to e(-)-h(+) separation. In addition, due to the combination of diatomite as support, this hybrid photocatalyst could be separated from solution quickly by natural settlement and exhibited good reusability. Copyright © 2014 Elsevier B.V. All rights reserved.

  11. Highly efficient and heavily-doped organic light-emitting devices based on an orange phosphorescent iridium complex

    International Nuclear Information System (INIS)

    Zhou, Shunliang; Wang, Qi; Li, Ming; Lu, Zhiyun; Yu, Junsheng

    2014-01-01

    Heavily doped and highly efficient phosphorescent organic light-emitting devices (PhOLEDs) had been fabricated by utilizing an orange iridium complex, bis[2-(3′,5′-di-tert-butylbiphenyl-4-yl)benzothiazolato-N,C 2' ]iridium(III) (acetylacetonate) [(tbpbt) 2 Ir(acac)], as a phosphor. When the doping concentration of [(tbpbt) 2 Ir(acac)] reached as high as 15 wt%, the PhOLEDs exhibited a power efficiency, current efficiency, and external quantum efficiency of 24.5 lm/W, 32.1 cd/A, 15.7%, respectively, implying a promising quenching-resistant characteristics of this novel phosphor. Furthermore, the efficient white PhOLEDs had been obtained by employing (tbpbt) 2 Ir(acac) as a self-host orange emitter, indicating that (tbpbt) 2 Ir(acac) could serve as a promising phosphor to fabricate white organic light-emitting devices with simplified manufacturing process. - Highlights: • Efficient phosphorescent devices were fabricated. • Optimized phosphor doping ratio reached as high as 15 wt%. • The results proved a promising quench-resistant property of the phosphor. • Efficient white devices based on this phosphor as self-host layer had been realized

  12. Highly efficient and heavily-doped organic light-emitting devices based on an orange phosphorescent iridium complex

    Energy Technology Data Exchange (ETDEWEB)

    Zhou, Shunliang; Wang, Qi [State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu 610054 (China); Li, Ming [College of Chemistry, Sichuan University, Chengdu, 610064 (China); Lu, Zhiyun, E-mail: luzhiyun@scu.edu.cn [College of Chemistry, Sichuan University, Chengdu, 610064 (China); Yu, Junsheng, E-mail: jsyu@uestc.edu.cn [State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu 610054 (China)

    2014-10-15

    Heavily doped and highly efficient phosphorescent organic light-emitting devices (PhOLEDs) had been fabricated by utilizing an orange iridium complex, bis[2-(3′,5′-di-tert-butylbiphenyl-4-yl)benzothiazolato-N,C{sup 2'}]iridium(III) (acetylacetonate) [(tbpbt){sub 2}Ir(acac)], as a phosphor. When the doping concentration of [(tbpbt){sub 2}Ir(acac)] reached as high as 15 wt%, the PhOLEDs exhibited a power efficiency, current efficiency, and external quantum efficiency of 24.5 lm/W, 32.1 cd/A, 15.7%, respectively, implying a promising quenching-resistant characteristics of this novel phosphor. Furthermore, the efficient white PhOLEDs had been obtained by employing (tbpbt){sub 2}Ir(acac) as a self-host orange emitter, indicating that (tbpbt){sub 2}Ir(acac) could serve as a promising phosphor to fabricate white organic light-emitting devices with simplified manufacturing process. - Highlights: • Efficient phosphorescent devices were fabricated. • Optimized phosphor doping ratio reached as high as 15 wt%. • The results proved a promising quench-resistant property of the phosphor. • Efficient white devices based on this phosphor as self-host layer had been realized.

  13. High activity of Ag-doped Cd0.1Zn0.9S photocatalyst prepared by the hydrothermal method for hydrogen production under visible-light irradiation

    Directory of Open Access Journals (Sweden)

    Leny Yuliati

    2014-05-01

    Full Text Available Background: The hydrothermal method was used as a new approach to prepare a series of Ag-doped Cd0.1Zn0.9S photocatalysts. The effect of Ag doping on the properties and photocatalytic activity of Cd0.1Zn0.9S was studied for the hydrogen production from water reduction under visible light irradiation.Results: Compared to the series prepared by the co-precipitation method, samples prepared by the hydrothermal method performed with a better photocatalytic activity. The sample with the optimum amount of Ag doping showed the highest hydrogen production rate of 3.91 mmol/h, which was 1.7 times higher than that of undoped Cd0.1Zn0.9S. With the Ag doping, a red shift in the optical response was observed, leading to a larger portion of the visible light absorption than that of without doping. In addition to the larger absorption in the visible-light region, the increase in photocatalytic activity of samples with Ag doping may also come from the Ag species facilitating electron–hole separation.Conclusion: This study demonstrated that Ag doping is a promising way to enhance the activity of Cd0.1Zn0.9S photocatalyst.

  14. A computational model for heterogeneous heating during pulsed laser irradiation of polymers doped with light-absorbing microparticles

    DEFF Research Database (Denmark)

    Marla, Deepak; Zhang, Yang; Jabbaribehnam, Mirmasoud

    2016-01-01

    characteristics. This work presents a study based on a computational model of laser heating of polymer doped with light-absorbing microparticles accounting for the heterogeneous nature of heating. The work aims at gaining a fundamental insight into the nature of the heating process and to understand the role......Doping of polymers with light-absorbing microparticles to increase their optical properties is a commonly used pre-treatment technique in laser processing of polymers. The presence of these particles plays an important role during laser heating of the polymer that influences its surface...... of microparticles. The results suggest that apart from the laser intensity and pulse duration, the properties of the microparticles including their size and distribution also play an important role during the laser heating of polymers....

  15. Conjugation of fiber-coupled wide-band light sources and acousto-optical spectral elements

    Science.gov (United States)

    Machikhin, Alexander; Batshev, Vladislav; Polschikova, Olga; Khokhlov, Demid; Pozhar, Vitold; Gorevoy, Alexey

    2017-12-01

    Endoscopic instrumentation is widely used for diagnostics and surgery. The imaging systems, which provide the hyperspectral information of the tissues accessible by endoscopes, are particularly interesting and promising for in vivo photoluminescence diagnostics and therapy of tumour and inflammatory diseases. To add the spectral imaging feature to standard video endoscopes, we propose to implement acousto-optical (AO) filtration of wide-band illumination of incandescent-lamp-based light sources. To collect maximum light and direct it to the fiber-optic light guide inside the endoscopic probe, we have developed and tested the optical system for coupling the light source, the acousto-optical tunable filter (AOTF) and the light guide. The system is compact and compatible with the standard endoscopic components.

  16. Zr-doped TiO{sub 2} supported on delaminated clay materials for solar photocatalytic treatment of emerging pollutants

    Energy Technology Data Exchange (ETDEWEB)

    Belver, C., E-mail: carolina.belver@uam.es; Bedia, J.; Rodriguez, J.J.

    2017-01-15

    Highlights: • Novel Zr-doped TiO{sub 2} delaminated clay materials were prepared by a sol-gel process. • Zr is incorporated into the anatase lattice. • Zr-TiO{sub 2} nanoparticles are homogenously distributed over the delaminated clay. • Zr doping enhances the photoactivity by reducing the band gap. • Degradation rates were favored at low concentrations and high radiation intensities. - Abstract: Solar light-active Zr-doped TiO{sub 2} nanoparticles were successfully immobilized on delaminated clay materials by a one-step sol-gel route. Fixing the amount of TiO{sub 2} at 65 wt.%, this work studies the influence of Zr loading (up to 2%) on the photocatalytic activity of the resulting Zr-doped TiO{sub 2}/clay materials. The structural characterization demonstrates that all samples were formed by a delaminated clay with nanostructured anatase assembled on its surface. The Zr dopant was successfully incorporated into the anatase lattice, resulting in a slight deformation of the anatase crystal and the reduction of the band gap. These materials exhibit high surface area with a disordered mesoporous structure formed by TiO{sub 2} particles (15–20 nm) supported on a delaminated clay. They were tested in the solar photodegradation of antipyrine, usually used as an analgesic drug and selected as an example of emerging pollutant. High degradation rates have been obtained at low antipyrine concentrations and high solar irradiation intensities with the Zr-doped TiO{sub 2}/clay catalyst, more effective than the undoped one. This work demonstrates the potential application of the synthesis method for preparing novel and efficient solar-light photocatalysts based on metal-doped anatase and a delaminated clay.

  17. Light emitting diode based on n-Zn{sub 0.94}M{sub 0.06}O nanorods/p-GaN (M= Cd and Ni) heterojunction under forward and reverse bias

    Energy Technology Data Exchange (ETDEWEB)

    Echresh, Ahmad, E-mail: ahmadechresh@gmail.com [Department of Science and Technology, Physical Electronics and Nanotechnology Division, Campus Norrköping, Linköping University (Sweden); Department of Physics, Shahid Chamran University of Ahvaz, Ahvaz (Iran, Islamic Republic of); Oeurn Chey, Chan [Department of Science and Technology, Physical Electronics and Nanotechnology Division, Campus Norrköping, Linköping University (Sweden); Zargar Shoushtari, Morteza [Department of Physics, Shahid Chamran University of Ahvaz, Ahvaz (Iran, Islamic Republic of); Nur, Omer; Willander, Magnus [Department of Science and Technology, Physical Electronics and Nanotechnology Division, Campus Norrköping, Linköping University (Sweden)

    2015-04-15

    In this study, we report on the improvement in the optoelectronic properties of n-ZnO nanorods/p-GaN heterojunction. This was achieved by doping the ZnO with cadmium (Cd) and nickel (Ni). The ZnO and Zn{sub 0.94}M{sub 0.06}O nanorods grown hydrothermally on the p-GaN substrate were used to fabricate the light emitting diodes (LEDs). Structural measurement revealed that nanorods with wurtzite structure having a preferential orientation along the (002) c-axis. The UV–vis spectra show that the optical band gap of Zn{sub 0.94}M{sub 0.06}O nanorods is decreased in comparison to ZnO nanorods. Electrical measurements of the fabricated LEDs show an obvious rectifying behaviour with low threshold voltage. Electroluminescence (EL) characteristics of LEDs operated at forward and reverse bias were investigated. The EL spectra under forward bias show that doping ZnO nanorods with Cd and Ni led to an intensity enhancement of the broad peak in the visible region while the blue peak originating from the p-GaN substrate remains almost unaffected. The effect of doping was to reduce the valence band offsets and consequently more hole injection has occurred leading to the observed enhancement of the broad band in the visible region. Under reverse bias all heterojunction LEDs show the blue light emission peak originating from the p-GaN substrate. - Highlights: • The reduction of the optical band gap of the M-doped ZnO (M= Cd and Ni) nanorods results in reduction of the valence band offset of the n-Zn{sub 0.94}M{sub 0.06}O nanorods/p-GaN heterojunction LEDs. • Doping ZnO nanorods with Cd and Ni led to an intensity enhancement of the broad peak in the visible region under forward bias. • Under reverse bias all heterojunction LEDs show the blue light emission peak originating from the p-GaN substrate.

  18. Defect-induced magnetism in undoped and Mn-doped wide band gapzinc oxide grown by aerosol spray pyrolysis

    CSIR Research Space (South Africa)

    Motaung, DE

    2014-08-01

    Full Text Available Surface Science Vol. 311, pp 14-26 Defect-induced magnetism in undoped and Mn-doped wide band gapzinc oxide grown by aerosol spray pyrolysis D.E. Motaunga,∗, I. Kortidise, D. Papadakie, S.S. Nkosib,∗∗, G.H. Mhlongoa,J. Wesley-Smitha, G.F. Malgasc, B....W. Mwakikungaa, E. Coetseed, H.C. Swartd,G. Kiriakidise,f, S.S. Raya aDST/CSIR Nanotechnology Innovation Centre, National Centre for Nano-Structured Materials, Council for Scientific and Industrial Research, P.O. Box 395,Pretoria 0001, South Africa b...

  19. Plasmonic energy transfer in periodically doped graphene

    International Nuclear Information System (INIS)

    Silveiro, I; Manjavacas, A; Thongrattanasiri, S; García de Abajo, F J

    2013-01-01

    We predict unprecedentedly large values of the energy-transfer rate between an optical emitter and a layer of periodically doped graphene. The transfer exhibits divergences at photon frequencies corresponding to the Van Hove singularities of the plasmonic band structure of the graphene. In particular, we find flat bands associated with regions of vanishing doping charge, which appear in graphene when it is patterned through gates of spatially alternating signs, giving rise to intense transfer rate singularities. Graphene is thus shown to provide a unique platform for fast control of optical energy transfer via fast electrostatic inhomogeneous doping. (paper)

  20. SU-F-T-239: Evaluation of Plastic Scintillator Light Output for Various Lead Doping Concentrations: Towards LET Detection

    International Nuclear Information System (INIS)

    Nusrat, H; Pang, G; Sarfehnia, A

    2016-01-01

    Purpose: This work seeks to develop a beam quality meter using multiple differently doped plastic scintillators that are thus intrinsically beam-quality dependent. Plastic scintillators spontaneously emit visible light upon irradiation; the amount of light produced is dependent on stopping power (closely related to LET) according to Birks’ law. Doping plastic scintillators can be used to tune their sensitivity to specific LET ranges. Methods: GEANT4.10.1 Monte Carlo (MC) was used to evaluate the response of various scintillator dopant combinations. MC radiation transport and scintillator light response were validated against previously published literature. Current work involves evaluating detector response experimentally; to that end, a detector prototype with interchangeable scintillator housing was constructed. Measurement set-up guides light emitted by the scintillator to a photomultiplier tube via a glass taper junction coupled to an optical fiber. The resulting signal is measured by an electrometer, and normalized to dose readout from a diode. Measurements have been done using clinical electron and orthovoltage beams. MC response (simulated scintillator light normalized to dose scored inside the scintillating volume) was evaluated for four different LET radiations for an undoped and 1%Pb doped scintillator (σ=0.85%). Simulated incident electrons included: 0.05, 0.1, 0.2, 6, 12, and 18 MeV; these energies correspond to a range of stopping power (related to LET) values ranging from 1.824 to 11.09 MeVcm"2g"−"1 (SCOL from NIST-ESTAR). Results: Initial MC results show a distinct divergence in scintillator response as LET increases. The response for undoped plastic scintillator indicated a 35.0% increase in signal when going from 18 MeV (low LET) to 0.05 MeV (high LET) while 1%-Pb doped scintillator indicated a 100.9% increase. Conclusion: After validating MC against measurement, simulations will be used to test various concentrations (2%, 4%, 6%) of different

  1. SU-F-T-239: Evaluation of Plastic Scintillator Light Output for Various Lead Doping Concentrations: Towards LET Detection

    Energy Technology Data Exchange (ETDEWEB)

    Nusrat, H [Ryerson University, Toronto, ON (Canada); Pang, G; Sarfehnia, A [Sunnybrook Health Sciences Centre, Toronto, ON (Canada)

    2016-06-15

    Purpose: This work seeks to develop a beam quality meter using multiple differently doped plastic scintillators that are thus intrinsically beam-quality dependent. Plastic scintillators spontaneously emit visible light upon irradiation; the amount of light produced is dependent on stopping power (closely related to LET) according to Birks’ law. Doping plastic scintillators can be used to tune their sensitivity to specific LET ranges. Methods: GEANT4.10.1 Monte Carlo (MC) was used to evaluate the response of various scintillator dopant combinations. MC radiation transport and scintillator light response were validated against previously published literature. Current work involves evaluating detector response experimentally; to that end, a detector prototype with interchangeable scintillator housing was constructed. Measurement set-up guides light emitted by the scintillator to a photomultiplier tube via a glass taper junction coupled to an optical fiber. The resulting signal is measured by an electrometer, and normalized to dose readout from a diode. Measurements have been done using clinical electron and orthovoltage beams. MC response (simulated scintillator light normalized to dose scored inside the scintillating volume) was evaluated for four different LET radiations for an undoped and 1%Pb doped scintillator (σ=0.85%). Simulated incident electrons included: 0.05, 0.1, 0.2, 6, 12, and 18 MeV; these energies correspond to a range of stopping power (related to LET) values ranging from 1.824 to 11.09 MeVcm{sup 2}g{sup −1} (SCOL from NIST-ESTAR). Results: Initial MC results show a distinct divergence in scintillator response as LET increases. The response for undoped plastic scintillator indicated a 35.0% increase in signal when going from 18 MeV (low LET) to 0.05 MeV (high LET) while 1%-Pb doped scintillator indicated a 100.9% increase. Conclusion: After validating MC against measurement, simulations will be used to test various concentrations (2%, 4%, 6%) of

  2. Preparation and characterization of zinc and copper co-doped WO3 nanoparticles: Application in photocatalysis and photobiology.

    Science.gov (United States)

    Mohammadi, Sanaz; Sohrabi, Maryam; Golikand, Ahmad Nozad; Fakhri, Ali

    2016-08-01

    In this study, pure, Zn, Cu, Zn,Cu co-doped WO3 nanoparticles samples were prepared by precipitation and co-precipitation methods. These nanoparticles were characterized by field emission scanning electron microscopy (FE-SEM), X-ray diffraction (XRD), energy dispersive X-ray spectrometer (EDX), Dynamic light scattering (DLS), UV-visible and photoluminescence (PL) spectroscopy. The synthesized pure, Zn, Cu, Zn,Cu co-doped WO3 nanoparticles have smart optical properties and average sizes with 3.2, 3.12, 3.08 and 2.97eV of band-gap, 18.1, 23.2, 25.7 and 30.2nm, respectively. Photocatalytic activity of four nanoparticles was studying towards degradation of gentamicin antibiotic under ultraviolet and visible light irradiation. The result showed that Zn,Cu co-doped WO3 possessed high photocatalytic activity. The photocatalytic activity of WO3 nanoparticles could be remarkably increased by doping the Zn and Cu impurity. This can be attributed to the fact that the red shift of absorption edge and the trapping effect of the mono and co-doped WO3 nanoparticles. The research result presents a general and effective way to prepare different photocatalysts with enhanced visible and UV light-driven photocatalytic performance. Antibacterial activity of four different WO3 nanoparticles against Escherichia coli bacterium has been assessed by the agar disc method under light irradiation and dark medium. It is concluded from the present findings that WO3 nanoparticles can be used as an efficient antibacterial agent. Copyright © 2016 Elsevier B.V. All rights reserved.

  3. Characterization of gadolinium-doped ZrO2 films exposed to ultraviolet light

    International Nuclear Information System (INIS)

    Sanchez R, A.; Azorin, J.; Rivera, T.

    2003-01-01

    This paper presents the results of characterizing gadolinium-doped ZrO 2 (ZrO 2 : Gd) films, both morphological and respect to their optical and thermoluminescent properties after irradiation with ultraviolet (UV) light. ZrO 2 presented crystalline structure in monoclinic phase; its absorption spectrum exhibited a peak at 274 and 277 nm for films deposited on glass and quartz substrates respectively. The optimum concentration of the dopant was found to be 12%. ZrO 2 : Gd presents its maximum Tl response when it is exposed to lJV light of wavelength in the range from 240 to 245 nm; its glow curve shows apparently one peak, which probably is the overlapping of various peaks. (Author)

  4. Defect induced structural inhomogeneity, ultraviolet light emission and near-band-edge photoluminescence broadening in degenerate In 2 O 3 nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Mukherjee, Souvik; Sarkar, Ketaki; Wiederrecht, Gary P.; Schaller, Richard D.; Gosztola, David J.; Stroscio, Michael A.; Dutta, Mitra

    2018-03-01

    We demonstrate here defect induced changes on the morphology and surface properties of indium oxide (In2O3) nanowires and further study their effects on the near-band-edge (NBE) emission, thereby showing the significant influence of surface states on In2O3 nanostructure based device characteristics for potential optoelectronic applications. In2O3 nanowires with cubic crystal structure (c-In2O3) were synthesized via carbothermal reduction technique using a gold-catalyst-assisted vapor–liquid–solid method. Onset of strong optical absorption could be observed at energies greater than 3.5 eV consistent with highly n-type characteristics due to unintentional doping from oxygen vacancy (VO) defects as confirmed using Raman spectroscopy. A combination of high resolution transmission electron microscopy, x-ray photoelectron spectroscopy and valence band analysis on the nanowire morphology and stoichiometry reveals presence of high-density of VO defects on the surface of the nanowires. As a result, chemisorbed oxygen species can be observed leading to upward band bending at the surface which corresponds to a smaller valence band offset of 2.15 eV. Temperature dependent photoluminescence (PL) spectroscopy was used to study the nature of the defect states and the influence of the surface states on the electronic band structure and NBE emission has been discussed. Our data reveals significant broadening of the NBE PL peak consistent with impurity band broadening leading to band-tailing effect from heavy doping.

  5. Electronic structure of O-doped SiGe calculated by DFT + U method

    Science.gov (United States)

    Zhao, Zong-Yan; Yang, Wen; Yang, Pei-Zhi

    2016-12-01

    To more in depth understand the doping effects of oxygen on SiGe alloys, both the micro-structure and properties of O-doped SiGe (including: bulk, (001) surface, and (110) surface) are calculated by DFT + U method in the present work. The calculated results are as follows. (i) The (110) surface is the main exposing surface of SiGe, in which O impurity prefers to occupy the surface vacancy sites. (ii) For O interstitial doping on SiGe (110) surface, the existences of energy states caused by O doping in the band gap not only enhance the infrared light absorption, but also improve the behaviors of photo-generated carriers. (iii) The finding about decreased surface work function of O-doped SiGe (110) surface can confirm previous experimental observations. (iv) In all cases, O doing mainly induces the electronic structures near the band gap to vary, but is not directly involved in these variations. Therefore, these findings in the present work not only can provide further explanation and analysis for the corresponding underlying mechanism for some of the experimental findings reported in the literature, but also conduce to the development of μc-SiGe-based solar cells in the future. Project supported by the Natural Science Foundation of Yunnan Province, China (Grant No. 2015FB123), the 18th Yunnan Province Young Academic and Technical Leaders Reserve Talent Project, China (Grant No. 2015HB015), and the National Natural Science Foundation of China (Grant No. U1037604).

  6. Photocatalytic behaviors and structural characterization of nanocrystalline Fe-doped TiO2 synthesized by mechanical alloying

    International Nuclear Information System (INIS)

    Kim, Dong Hyun; Hong, Hyun Seon; Kim, Sun Jae; Song, Jae Sung; Lee, Kyung Sub

    2004-01-01

    Nanocrystalline Fe-doped TiO 2 powders were synthesized by mechanical alloying (MA) with varying Fe contents from 0 up to 4.8 wt.% to shift the absorption threshold into the visible light region. The photocatalytic feasibility of the Fe-doped TiO 2 powder was evaluated by quantifying the visible light absorption capacity using ultraviolet and visible (UV-Vis) spectroscopy and photoluminescence spectroscopy. Effects of Fe additions on the crystal structures and the morphologies of the Fe-doped powders were also investigated as a function of the doping content using transmission electron microscopy-electron diffraction pattern (TEM-EDP), X-ray diffraction (XRD) and energy dispersive X-ray (EDAX) and X-ray photoelectron spectroscopy (XPS). The UV-Vis study showed that the UV absorption for the Fe-doped powder moved to a longer wavelength (red shift) and the photoefficiency was enhanced. Based on the analysis of the photoluminescence spectra, the red shift was believed to be induced by localizing the dopant level near the valence band of TiO 2 . The UV-Vis absorption depended on the Fe concentration. TEM-EDP and XRD investigations showed that the Fe-doped powder had a rutile phase in which the added Fe atoms were dissolved. The rutile phase was composed of spherical particles and chestnut bur shaped particles, resulting in a larger surface area than the spherical P-25 powder

  7. Optical properties of single doped Cr3+ and co-doped Cr3+-Nd3+ aluminum tantalum tellurite glasses

    International Nuclear Information System (INIS)

    Rodriguez-Mendoza, U.R.; Speghini, A.; Jaque, D.; Zambelli, M.; Bettinelli, M.

    2004-01-01

    The optical properties for single doped Cr 3+ and co-doped Cr 3+ -Nd 3+ aluminum tantalum tellurite glasses have been studied as a function of temperature. For the single doped glass, the existence of two bands in the emission spectra at low temperature indicates the presence of two different sites for the Cr 3+ ions, labelled as usual as low- and high-field sites. The broad band centred in the Near Infrared region, corresponds to low-field sites transition 4 T 2 → 4 A 2 , and the narrow band centred at approximately 715 nm to the high-field sites transition 2 E→ 4 A 2 . The emission intensity for both high- and low-field sites shows a strong decrease with increasing temperature, with the emission for the former sites vanishing at RT. In both cases the quenching observed with the increase of temperature can be ascribed to the presence of non-radiative relaxation mechanisms. Experimental observations for the co-doped glass show that both radiative and non-radiative energy transfer processes from Cr 3+ to Nd 3+ are present

  8. Facile synthesis of aluminium doped zinc oxide-polyaniline hybrids for photoluminescence and enhanced visible-light assisted photo-degradation of organic contaminants

    Energy Technology Data Exchange (ETDEWEB)

    Mitra, Mousumi [Department of Physics, Indian Institute of Engineering Science and Technology, Shibpur, Howrah 711103, West Bengal (India); Ghosh, Amrita; Mondal, Anup [Department of Chemistry, Indian Institute of Engineering Science and Technology, Shibpur, Howrah 711103, West Bengal (India); Kargupta, Kajari [Department of Chemical Engineering, Jadavpur University, Kolkata 700032, West Bengal (India); Ganguly, Saibal [Department of Chemical Engineering, BITS Pilani, K K Birla Goa Campus, NH 17 B Bypass Road, Zuarinagar, Sancoale, Goa 403726 (India); Banerjee, Dipali, E-mail: dipalibanerjeebesu@gmail.com [Department of Physics, Indian Institute of Engineering Science and Technology, Shibpur, Howrah 711103, West Bengal (India)

    2017-04-30

    Graphical abstract: The present work focuses on the synergistic effect of a novel hybrid hetero structure (n-type aluminum doped zinc oxide and p-type polyaniline), combining both sol-gel and in-situ oxidative polymerization method and studying its photoluminescence (PL), photocatalytic, electrochemical impedance spectroscopy (EIS), linear scan voltammetry (LSV) and photocurrent properties. - Highlights: • Aluminium doped zinc oxide-polyaniline (PAZ) hybrids were prepared by polymerization of aniline using aluminium doped zinc oxide nanorod templates. • The hybrids were used as visible light photocatalysts for methyl orange (MO) and rose bengal (RB) dye degradation. • First order rate constants of the photocatalytic process were evaluated as 1.77 × 10{sup −2} min{sup −1} and 2.61 × 10{sup −2} min{sup −1} for MO and RB dyes respectively. • Photoluminescence and electrochemical properties were in accord with the photocatalytic performance of the hybrid. - Abstract: The emergence of organic-inorganic photoactive materials has led to marked progress in the field of heterogeneous visible-light photocatalysis. Visible-light active aluminium doped zinc oxide-polyaniline (PAZ) hybrid was prepared employing in-situ oxidative polymerization of polyaniline (PANI) in the presence of aluminium doped zinc oxide (AlZnO) nanorods, synthesized via sol-gel route. The compositions, structural and optical properties of the synthesized hybrids were characterized. Among various samples, the 22 wt% aluminium doped zinc oxide-polyaniline (PAZ 3) hybrid show the best photocatalytic action for the degradation of methyl orange (MO) and rose bengal (RB) dyes under visible-light illumination, even after repeated use. The performance of the photocatalytic process was determined by the first order rate constant, 1.77 × 10{sup −2} min{sup −1} and 2.61 × 10{sup −2} min{sup −1} for MO and RB dyes, respectively. Scavenger test was used to determine the role of active

  9. Improvement in the performance of graphene nanoribbon p-i-n tunneling field effect transistors by applying lightly doped profile on drain region

    Science.gov (United States)

    Naderi, Ali

    2017-12-01

    In this paper, an efficient structure with lightly doped drain region is proposed for p-i-n graphene nanoribbon field effect transistors (LD-PIN-GNRFET). Self-consistent solution of Poisson and Schrödinger equation within Nonequilibrium Green’s function (NEGF) formalism has been employed to simulate the quantum transport of the devices. In proposed structure, source region is doped by constant doping density, channel is an intrinsic GNR, and drain region contains two parts with lightly and heavily doped doping distributions. The important challenge in tunneling devices is obtaining higher current ratio. Our simulations demonstrate that LD-PIN-GNRFET is a steep slope device which not only reduces the leakage current and current ratio but also enhances delay, power delay product, and cutoff frequency in comparison with conventional PIN GNRFETs with uniform distribution of impurity and with linear doping profile in drain region. Also, the device is able to operate in higher drain-source voltages due to the effectively reduced electric field at drain side. Briefly, the proposed structure can be considered as a more reliable device for low standby-power logic applications operating at higher voltages and upper cutoff frequencies.

  10. Hydrothermal fabrication of N-doped (BiO){sub 2}CO{sub 3}: Structural and morphological influence on the visible light photocatalytic activity

    Energy Technology Data Exchange (ETDEWEB)

    Dong, Fan, E-mail: dfctbu@126.com [Chongqing Key Laboratory of Catalysis and Functional Organic Molecules, College of Environmental and Biological Engineering, Chongqing Technology and Business University, Chongqing 400067 (China); Wang, Rui; Li, Xinwei [Chongqing Key Laboratory of Catalysis and Functional Organic Molecules, College of Environmental and Biological Engineering, Chongqing Technology and Business University, Chongqing 400067 (China); Ho, Wing-Kei [Department of Science and Environmental Studies, The Centre for Education in Environmental Sustainability, The Hong Kong Institute of Education, Hong Kong (China)

    2014-11-15

    Graphical abstract: - Highlights: • Persimmon-like, flower-like N-doped (BiO){sub 2}CO{sub 3} superstructures were prepared. • The superstructures were fabricated by one-step hydrothermal method. • The hydrothermal temperature controlled the morphological structure. • N-doped (BiO){sub 2}CO{sub 3} superstructure showed enhanced photocatalytic activity. • The high activity can be ascribed to doped nitrogen and hierarchical structure. - Abstract: Various 3D N-doped (BiO){sub 2}CO{sub 3} (N-BOC) hierarchical superstructures self-assembled with 2D nanosheets were fabricated by one-step hydrothermal treatment of bismuth citrate and urea. The as-obtained samples were characterized by XRD, XPS, FT-IR, SEM, N{sub 2} adsorption–desorption isotherms and UV–vis DRS. The hydrothermal temperature plays a crucial role in tuning the crystal and morphological structure of the samples. Adjusting the reaction temperature to 150, 180 and 210 °C, we obtained N-doped (BiO){sub 2}CO{sub 3} samples with corresponding attractive persimmon-like, flower-like and nanoflakes nano/microstructures. The photocatalytic activities of the samples were evaluated by removal of NO under visible and solar light irradiation. The results revealed that the N-doped (BiO){sub 2}CO{sub 3} hierarchical superstructures showed enhanced visible light photocatalytic activity compared to pure (BiO){sub 2}CO{sub 3} and TiO{sub 2}-based visible light photocatalysts. The outstanding photocatalytic performance of N-BOC samples can be ascribed to the doped nitrogen and the special hierarchical structure. The present work could provide new perspectives in controlling the morphological structure and photocatalytic activity of photocatalyst for better environmental pollution control.

  11. The effects of Si-doped prelayers on the optical properties of InGaN/GaN single quantum well structures

    Energy Technology Data Exchange (ETDEWEB)

    Davies, M. J., E-mail: Matthew.Davies-2@Manchester.ac.uk; Dawson, P. [School of Physics and Astronomy, Photon Science Institute, University of Manchester, Manchester M13 9PL (United Kingdom); Massabuau, F. C.-P.; Oliver, R. A.; Kappers, M. J.; Humphreys, C. J. [Department of Material Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS (United Kingdom)

    2014-09-01

    In this paper, we report on the effects of including Si-doped (In)GaN prelayers on the low temperature optical properties of a blue-light emitting InGaN/GaN single quantum well. We observed a large blue shift of the photoluminescence peak emission energy and significant increases in the radiative recombination rate for the quantum well structures that incorporated Si-doped prelayers. Simulations of the variation of the conduction and valence band energies show that a strong modification of the band profile occurs for the quantum wells on Si-doped prelayers due to an increase in strength of the surface polarization field. The enhanced surface polarization field opposes the built-in field across the quantum well and thus reduces this built-in electric field. This reduction of the electric field across the quantum well reduces the Quantum Confined Stark Effect and is responsible for the observed blue shift and the change in the recombination dynamics.

  12. Carbon wrapped and doped TiO{sub 2} mesoporous nanostructure with efficient visible-light photocatalysis for NO removal

    Energy Technology Data Exchange (ETDEWEB)

    He, Di; Li, Yongli, E-mail: lyl@bjut.edu.cn; Wang, Inshu, E-mail: wangjsh@bjut.edu.cn; Wu, Junshu; Yang, Yilong; An, Qier

    2017-01-01

    Highlights: • Carbon wrapped and doped mesoporous titanium dioxide nanocrystals were fabricated. • Meso/micropores are generated on TiO{sub 2} surface caused by eliminating of carbon precursor. • Absorption edge is extended to visible region owing to the carbon-doping. • About 71% of NO is removed under visible light irradiation even in absence of moisture. - Abstract: Carbon wrapped and doped mesoporous anatase TiO{sub 2} nanocrystals were prepared by a hydrothermal approach in acetic acid aqueous containing chitosan. A designed post-thermal treatment was employed to enhance the incorporation between carbon and TiO{sub 2}. After hydrothermal process, mesoporous anatase TiO{sub 2} formed with wrapped by a few layers of carbon shell. Here chitosan was used as not only the template for the formation of mesopores, but also the carbon source toward the carbon layers coating. Furthermore, chitosan provided doping element into TiO{sub 2} lattice and induced to form Ti−C bond which caused Ti(III) with oxygen vacancies. The Ti(III)-oxygen vacancy are partly responsible for visible-light response and high photocatalytic activity, which can accelerate electron transfer thus inhibit photogenerated charge recombination. The photocatalytic activity was evaluated using photo-oxidation of gaseous NO under visible light irradiation as the probe reaction. In the optimum result, 71% of NO with starting concentration at ppb level was photo-degraded. Our results also showed that the photogenerated electrons played a key role in photodegradation of NO, as a result, the environmental humidity level had a negligible effect on the photocatalysis.

  13. Electronic structure of B-doped diamond: A first-principles study

    Directory of Open Access Journals (Sweden)

    T. Oguchi

    2006-01-01

    Full Text Available Electronic structure of B-doped diamond is studied based on first-principles calculations with supercell models for substitutional and interstitial doping at 1.5–3.1 at.% B concentrations. Substitutional doping induces holes around the valence-band maximum in a rigid-band fashion. The nearest neighbor C site to B shows a large energy shift of 1s core state, which may explain reasonably experimental features in recent photoemission and X-ray absorption spectra. Doping at interstitial Td site is found to be unstable compared with that at the substitutional site

  14. Doping Asymmetry Problem in ZnO: Current Status and Outlook. A Review of Experimental and Theoretical Efforts Focused on Achieving P-Type ZnO Suitable for Light-Emitting Optoelectronic Devices for the Blue/Ultraviolet Spectral Range

    Science.gov (United States)

    2009-04-24

    dominant acceptors in the as-grown n-type ZnO as shown by positron annihilation spectroscopy [19]. To date, n-type doping is relatively well established...recently as a promising material for a variety of applications . To a large extent, the renewed interest in ZnO is fuelled by its wide direct band gap (3.3...problem (also dubbed as the p-type problem in ZnO) is preventing applications of ZnO in light-emitting diodes and potential laser diodes. In this article

  15. Effects of phosphorus-doping on energy band-gap, structural, surface, and photocatalytic characteristics of emulsion-based sol-gel derived TiO{sub 2} nano-powder

    Energy Technology Data Exchange (ETDEWEB)

    Ganesh, Ibram, E-mail: ibramganesh@arci.res.in

    2017-08-31

    Highlights: • Reported a novel route to synthesize high specific surface area P-doped TiO{sub 2} nano-powder photocatalysts. • Established methylene blue dye-sensitization mechanism of TiO{sub 2} photocatalyst. • Established the effects of methylene blue adsorption on the surface, structural and photocatalytic activity of P-doped TiO{sub 2}. • Established true quantum efficiency determination method for TiO{sub 2} photocatalysis. - Abstract: Different amounts of phosphorus (P)-doped TiO{sub 2} (PDT) nano-powders (P = 0–10 wt.%) were synthesized by following a new emulsion-based sol-gel (EBSG) route and calcined at 400 °C–800 °C for 6 h. These calcined PDT powders were then thoroughly characterized by means of XRD, XPS, SEM, FT-IR, FT-Raman, DRS, BET surface area, zeta-potential, cyclic-voltammetry and photocatalytic evaluation using methylene blue (MB) as a model-pollutant and established the effects of phosphorous doping on structural, surface, band-gap energy, and photocatalytic characteristics of TiO{sub 2} nano-powder formed in EBSG route. The characterization results suggest that the EBSG derived TiO{sub 2} nano-powder after calcination at 400 °C for 6 h is in the form of anatase phase when it was doped with <8 wt.% P, and it is in the amorphous state when doped with >8 wt.% P. Furthermore, these EBSG derived PDT powders own high negative zeta-potentials, high specific surface areas (up to >250 m{sup 2}/g), and suitable band-gap energies (<3.34 eV). Surprisingly, these PDT powders exhibit very high MB adsorption (up to 50%) from its aqueous 0.01 mM, 0.02 mM and 0.03 mM solutions during 30 min stirring in the dark, whereas, the commercial Degussa P-25 TiO{sub 2} nano-powder shows no adsorption. Among various photocatalysts investigated in this study, the 1 wt.% P-doped TiO{sub 2} nano-powder formed in EBSG route exhibited the highest photocatalytic activity for MB degradation reaction.

  16. The effect of simultaneous substitution on the electronic band structure and thermoelectric properties of Se-doped Co3SnInS2 with the Kagome lattice

    OpenAIRE

    Fujioka, Masaya; Shibuya, Taizo; Nakai, Junya; Yoshiyasu, Keigo; Sakai, Yuki; Takano, Yoshihiko; Kamihara, Yoichi; Matoba, Masanori

    2012-01-01

    The thermoelectric properties and electronic band structures for Se-doped Co3SnInS2 were examined. The parent compound of this material (Co3Sn2S2) has two kinds of Sn sites (Sn1 and Sn2 sites). The density functional theory (DFT) calculations show that the indium substitution at the Sn2 site induces a metallic band structure, on the other hand, a semiconducting band structure is obtained from substitution at the Sn1 site. However, according to the previous reports, since the indium atom prefe...

  17. A light-driven modulation of electric conductance through the adsorption of azobenzene onto silicon-doped- and pyridine-like N3-vacancy graphene.

    Science.gov (United States)

    Zhao, Jun; Liu, Chunyan; Ma, Jing

    2017-12-14

    The ability to modulate the conductance of an electronic device under light irradiation is crucial to the practical applications of nanoscale electronics. Density functional theory calculations predict that the conductance of the photo-responsive graphene-based nanocomposites can be tuned through the noncovalent adsorption of an azobenzene (AB) derivative onto pristine, Si-doped, and pyridine-like N 3 -vacancy graphene. AB@graphene systems were found to exhibit a visible-light response within the low-frequency region, rendering the trans-to-cis isomerizations of these nanocomposites under the irradiation of solar light. The excellent solar light absorption performances of these hybrids can then be used to modulate the conductance of both N 3 -vacancy- and Si-doped-graphene AB hybrids effectively through the reversible change of the effective conjugate length of the AB molecule in the photoisomerization. In addition, the solar thermal energy up to 1.53 eV per AB molecule can be stored in the designed nanocomposites with the doped graphene. These findings provide clues for making multifunctional materials with potential applications as both optically controlled nanoelectronics and solar energy storage devices.

  18. Comparison of Sn-doped and nonstoichiometric vertical-Bridgman-grown crystals of the topological insulator Bi{sub 2}Te{sub 2}Se

    Energy Technology Data Exchange (ETDEWEB)

    Kushwaha, S. K., E-mail: kushwaha@princeton.edu; Gibson, Q. D.; Cava, R. J. [Department of Chemistry, Princeton University, Princeton, New Jersey 08544 (United States); Xiong, J.; Ong, N. P. [Department of Physics, Princeton University, Princeton, New Jersey 08544 (United States); Pletikosic, I. [Department of Physics, Princeton University, Princeton, New Jersey 08544 (United States); Condensed Matter Physics and Materials Science Department, Brookhaven National Lab, Upton, New York 11973 (United States); Weber, A. P. [National Synchrotron Light Source, Brookhaven National Lab, Upton, New York 11973 (United States); Fedorov, A. V. [Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States); Valla, T. [Condensed Matter Physics and Materials Science Department, Brookhaven National Lab, Upton, New York 11973 (United States)

    2014-04-14

    A comparative study of the properties of topological insulator Bi{sub 2}Te{sub 2}Se (BTS) crystals grown by the vertical Bridgeman method is described. Two defect mechanisms that create acceptor impurities to compensate for the native n-type carriers are compared: Bi excess, and light Sn doping. Both methods yield low carrier concentrations and an n-p crossover over the length of the grown crystal boules, but lower carrier concentrations and higher resistivities are obtained for the Sn-doped crystals, which reach carrier concentrations as low as 8 × 10{sup 14} cm{sup −3}. Further, the temperature dependent resistivities for the Sn-doped crystals display strongly activated behavior at high temperatures, with a characteristic energy of half the bulk band gap. The (001) cleaved Sn-doped BTS crystals display high quality Shubnikov de Haas (SdH) quantum oscillations due to the topological surface state electrons. Angle resolved photoelectron spectroscopy (ARPES) characterization shows that the Fermi energy (E{sub F}) for the Sn-doped crystals falls cleanly in the surface states with no interference from the bulk bands, which the Dirac point for the surface states lies approximately 60 meV below the top of the bulk valence band maximum, and allows for a determination of the bulk and surface state carrier concentrations as a function of Energy near E{sub F}. Electronic structure calculations that compare Bi excess and Sn dopants in BTS demonstrate that Sn acts as a special impurity, with a localized impurity band that acts as a charge buffer occurring inside the bulk band gap. We propose that the special resonant level character of Sn in BTS gives rise to the exceptionally low carrier concentrations and activated resistivities observed.

  19. Tunable multicolor and white-light upconversion luminescence in Yb3+/Tm3+/Ho3+ tri-doped NaYF4 micro-crystals.

    Science.gov (United States)

    Lin, Hao; Xu, Dekang; Teng, Dongdong; Yang, Shenghong; Zhang, Yueli

    2015-09-01

    NaYF4 micro-crystals with various concentrations of Yb(3+) /Tm(3+) /Ho(3+) were prepared successfully via a simple and reproducible hydrothermal route using EDTA as the chelating agent. Their phase structure and surface morphology were studied using powder X-ray diffraction (XRD) and scanning electron microscopy (SEM). The XRD patterns revealed that all the samples were pure hexagonal phase NaYF4. SEM images showed that Yb(3+)/Tm(3+)/Ho(3+) tri-doped NaYF4 were hexagonal micro-prisms. Upconversion photoluminescence spectra of Yb(3+)/Tm(3+)/Ho(3+) tri-doped NaYF4 micro-crystals with various dopant concentrations under 980 nm excitation with a 665 mW pump power were studied. Tunable multicolor (purple, purplish blue, yellowish green, green) and white light were achieved by simply adjusting the Ho(3+) concentration in 20%Yb(3+)/1%Tm(3+)/xHo(3+) tri-doped NaYF4 micro-crystals. Furthermore, white-light emissions could be obtained using different pump powers in 20%Yb(3+)/1%Tm(3+)/1%Ho(3+) tri-doped NaYF4 micro-crystals at 980 nm excitation. The pump power-dependent intensity relationship was studied and relevant energy transfer processes were discussed in detail. The results suggest that Yb(3+)/Tm(3+) Ho(3+) tri-doped NaYF4 micro-crystals have potential applications in optoelectronic devices such as photovoltaic, plasma display panel and white-light-emitting diodes. Copyright © 2014 John Wiley & Sons, Ltd.

  20. Formation of polar surfaces in microstructured ZnO by doping with Cu and applications in photocatalysis using visible light

    International Nuclear Information System (INIS)

    Pawar, Rajendra C.; Choi, Da-Hyun; Lee, Jai-Sung; Lee, Caroline S.

    2015-01-01

    We report the synthesis of copper-doped zinc oxide microstructures with a large amount of polar surfaces using a single-step facile chemical method by collecting powders of zinc oxide (ZnO) microstructures. It was found that rod-like morphology of ZnO transformed into disk and sphere-like structure with nanosheets. Hollow disk-like structures were formed due to the surface etching properties of Cl − ions in the copper chloride precursor. The photocatalytic degradation of methylene blue (MB) and rhodamine B (RhB) dyes was measured under irradiation with visible light using the structures as catalysts. The Cu-doped ZnO exhibited better photodegradation properties than did undoped ZnO. The enhanced performance is attributed to the existence of (001) polar surfaces, oxygen vacancies, and increased optical absorbance at visible wavelengths, which is consistent with the field emission scanning electron microscopy (FESEM), transmission electron microscopy (TEM), room temperature photoluminescence (PL), and optical absorbance measurements. These favorable photocatalytic properties of the doped microstructures demonstrate their potential for use in wastewater treatment. - Graphical abstract: Graphical abstract shows the electron transfer mechanism under visible light for Cu-doped ZnO microstructures and the photocatalytic degradation of dye. - Highlights: • Cu induced microstructures of ZnO with polar surfaces. • Methylene blue degradation under visible light irradiation. • Room temperature ferromagnetism due to oxygen vacancies in ZnO. • 7% Cu–ZnO has highest photocatalytic activity

  1. Efficient Sub-Bandgap Light Absorption and Signal Amplification in Silicon Photodetectors

    Science.gov (United States)

    Liu, Yu-Hsin

    This thesis focuses on two areas in silicon photodetectors, the first being enhancing the sub-bandgap light absorption of IR wavelenghts in silicon, and the second being intrinsic signal amplification in silicon photodetectors. Both of these are achieved using heavily doped p-n junction devices which create localized states that relax the k-selection rule of indirect bandgap material. The probability of transitions between impurity band and the conduction/valence band would be much more efficient than the one between band-to-band transition. The waveguide-coupled epitaxial p-n photodetector was demonstrated for 1310 nm wavelength detection. Incorporated with the Franz-Keldysh effect and the quasi-confined epitaxial layer design, an absorption coefficient around 10 cm-1 has been measured and internal quantum efficiency nearly 100% at -2.5V. The absorption coefficient is calculated from the wave function of the electron and hole in p-n diode. The heavily doped impurity wave function can be formulated as a delta function, and the quasi-confined conduction band energy states, and the wave function on each level can be obtained from the Silvaco software. The calculated theoretical absorption coefficient increases with the increasing applied bias and the doping concentration, which matches the experimental results. To solve the issues of large excess noise and high operation bias for avalanche photodiodes based on impact ionization, I presented a detector using the Cycling Excitation Process (CEP) for signal amplification. This can be realized in a heavily doped and highly compensated Si p-n junction, showing ultra high gain about 3000 at very low bias (<4 V), and possessing an intrinsic, phonon-mediated regulation process to keep the device stable without any quenching device required in today's Geiger-mode avalanche detectors. The CEP can be formulated with the rate equations in conduction bands and impurity states. The gain expression, which is a function of the

  2. Doping concentration effect on performance of single QW double-heterostructure InGaN/AlGaN light emitting diode

    Science.gov (United States)

    Halim, N. Syafira Abdul; Wahid, M. Halim A.; Hambali, N. Azura M. Ahmad; Rashid, Shanise; Shahimin, Mukhzeer M.

    2017-11-01

    Light emitting diode (LED) employed a numerous applications such as displaying information, communication, sensing, illumination and lighting. In this paper, InGaN/AlGaN based on one quantum well (1QW) light emitting diode (LED) is modeled and studied numerically by using COMSOL Multiphysics 5.1 version. We have selected In0.06Ga0.94N as the active layer with thickness 50nm sandwiched between 0.15μm thick layers of p and n-type Al0.15Ga0.85N of cladding layers. We investigated an effect of doping concentration on InGaN/AlGaN double heterostructure of light-emitting diode (LED). Thus, energy levels, carrier concentration, electron concentration and forward voltage (IV) are extracted from the simulation results. As the doping concentration is increasing, the performance of threshold voltage, Vth on one quantum well (1QW) is also increases from 2.8V to 3.1V.

  3. Doping concentration effect on performance of single QW double-heterostructure InGaN/AlGaN light emitting diode

    Directory of Open Access Journals (Sweden)

    Abdul Halim N. Syafira

    2017-01-01

    Full Text Available Light emitting diode (LED employed a numerous applications such as displaying information, communication, sensing, illumination and lighting. In this paper, InGaN/AlGaN based on one quantum well (1QW light emitting diode (LED is modeled and studied numerically by using COMSOL Multiphysics 5.1 version. We have selected In0.06Ga0.94N as the active layer with thickness 50nm sandwiched between 0.15μm thick layers of p and n-type Al0.15Ga0.85N of cladding layers. We investigated an effect of doping concentration on InGaN/AlGaN double heterostructure of light-emitting diode (LED. Thus, energy levels, carrier concentration, electron concentration and forward voltage (IV are extracted from the simulation results. As the doping concentration is increasing, the performance of threshold voltage, Vth on one quantum well (1QW is also increases from 2.8V to 3.1V.

  4. A fast and effective method for N-doping TiO2 by post treatment with liquid ammonia: visible light photocatalysis

    International Nuclear Information System (INIS)

    Powell, Michael J.; Palgrave, Robert G.; Dunnill, Charles W.; Parkin, Ivan P.

    2014-01-01

    TiO 2 thin films prepared by sol–gel synthesis were N-doped by post treating with liquid ammonia and annealing at 500 °C. Characterisation by X-ray diffraction and Raman spectroscopy confirmed that the anatase crystal type was retained and present in all samples. Scanning electron microscopy showed that treatment with liquid ammonia had no significant effect on the film morphology. Functional testing under filtered while light conditions involving water contact angle, and the photo destruction of both Resazurin and Stearic acid showed the ammonia treated samples to be active visible light photocatalysts in contrast to the pure TiO 2 and the blank controls. X-ray Photoelectron Spectroscopy studies indicate the presence of interstitial nitrogen (N 1s = 400 eV) suggesting that the origin of the enhanced photocatalytic activity is most likely due to oxygen vacancies created by the interstitial nitrogen incorporation. This synthesis method utilises a simple, inexpensive and highly effective post treatment route to N-dope TiO 2 and produces visible light photocatalysts with potential applications in self-cleaning and healthcare environments. - Highlights: • Synthesis and characterisation of N-doped TiO 2 thin films • N-doping by a post treatment with liquid ammonia • Enhanced photocatalytic activity • Easy enhancement of current TiO 2 based technologies

  5. Synthesis and photocatalytic activity of ytterbium-doped titania/diatomite composite photocatalysts

    International Nuclear Information System (INIS)

    Tang, Wenjian; Qiu, Kehui; Zhang, Peicong; Yuan, Xiqiang

    2016-01-01

    Graphical abstract: - Highlights: • Yb-doped TiO_2/diatomite composite photocatalysts were prepared by a sol-gel method. • Yb-doped TiO_2/diatomite photocatalysts show much higher photocatalytic activity. • The higher photodegradation rate is due to the effect of diatomite and Yb doping. - Abstract: Ytterbium-doped titanium dioxide (Yb-TiO_2)/diatomite composite materials with different Yb concentrations were prepared by sol–gel method. The phase structure, morphology, and chemical composition of the as-prepared composites were well characterized by X-ray diffraction (XRD), Fourier transform infrared spectroscopy, Raman spectroscopy, scanning electron microscopy (SEM), and ultraviolet–visible (UV–vis) diffuse reflection spectroscopy. The XRD and Raman spectroscopy analysis indicated that the TiO_2 existed in the form of pure anatase in the composites. The SEM images exhibited the well deposition and dispersion of TiO_2 nanoparticles with little agglomeration on the surfaces of diatoms. The UV–vis diffuse reflection spectra showed that the band gap of TiO_2 could be narrowed by the introduction of Yb species, which was further affected by doping concentration of Yb. The photocatalytic activity of synthesized samples was investigated by the degradation of methylene blue (MB) under UV light irradiation. It was observed that the photocatalytic degradation followed a pseudo-first-order kinetics according to the Langmuir–Hinshelwood model. Compared to TiO_2 and TiO_2/diatomite, the Yb-TiO_2/diatomite composites exhibited higher photocatalytic activity toward degradation of MB using UV light irradiation.

  6. Synthesis and photocatalytic activity of ytterbium-doped titania/diatomite composite photocatalysts

    Energy Technology Data Exchange (ETDEWEB)

    Tang, Wenjian; Qiu, Kehui; Zhang, Peicong; Yuan, Xiqiang

    2016-01-30

    Graphical abstract: - Highlights: • Yb-doped TiO{sub 2}/diatomite composite photocatalysts were prepared by a sol-gel method. • Yb-doped TiO{sub 2}/diatomite photocatalysts show much higher photocatalytic activity. • The higher photodegradation rate is due to the effect of diatomite and Yb doping. - Abstract: Ytterbium-doped titanium dioxide (Yb-TiO{sub 2})/diatomite composite materials with different Yb concentrations were prepared by sol–gel method. The phase structure, morphology, and chemical composition of the as-prepared composites were well characterized by X-ray diffraction (XRD), Fourier transform infrared spectroscopy, Raman spectroscopy, scanning electron microscopy (SEM), and ultraviolet–visible (UV–vis) diffuse reflection spectroscopy. The XRD and Raman spectroscopy analysis indicated that the TiO{sub 2} existed in the form of pure anatase in the composites. The SEM images exhibited the well deposition and dispersion of TiO{sub 2} nanoparticles with little agglomeration on the surfaces of diatoms. The UV–vis diffuse reflection spectra showed that the band gap of TiO{sub 2} could be narrowed by the introduction of Yb species, which was further affected by doping concentration of Yb. The photocatalytic activity of synthesized samples was investigated by the degradation of methylene blue (MB) under UV light irradiation. It was observed that the photocatalytic degradation followed a pseudo-first-order kinetics according to the Langmuir–Hinshelwood model. Compared to TiO{sub 2} and TiO{sub 2}/diatomite, the Yb-TiO{sub 2}/diatomite composites exhibited higher photocatalytic activity toward degradation of MB using UV light irradiation.

  7. Utilization of visible to NIR light energy by Yb{sup +3}, Er{sup +3} and Tm{sup +3} doped BiVO{sub 4} for the photocatalytic degradation of methylene blue

    Energy Technology Data Exchange (ETDEWEB)

    Regmi, Chhabilal [Research Center for Eco-Multifunctional Nanomaterials, Sun Moon University, Chungnam 31460 (Korea, Republic of); Kshetri, Yuwaraj K. [Department of Advanced Materials Engineering, Sun Moon University, Chungnam 31460 (Korea, Republic of); Ray, Schindra Kumar [Research Center for Eco-Multifunctional Nanomaterials, Sun Moon University, Chungnam 31460 (Korea, Republic of); Pandey, Ramesh Prasad [Institute of Biomolecule Reconstruction, Department of BT-Convergent Pharmaceutical Engineering, Sun Moon University, Chungnam 31460 (Korea, Republic of); Lee, Soo Wohn, E-mail: swlee@sunmoon.ac.kr [Research Center for Eco-Multifunctional Nanomaterials, Sun Moon University, Chungnam 31460 (Korea, Republic of)

    2017-01-15

    Highlights: • Lanthanide doped BiVO{sub 4} as highly efficient upconversion and photocatalytic material. • Well defined beads like morphology for better photocatalytic activity. • Effective utilization of NIR and visible light for efficient photocatalytic degradation of methylene blue. • Nontoxic to human cells, potential for application in biological fields. - Abstract: Lanthanide-doped BiVO{sub 4} semiconductors with efficient photocatalytic activities over a broad range of the solar light spectrum have been synthesized by the microwave hydrothermal method using ethylenediaminetetraacetic acid (EDTA). The structural, morphological, and optical properties of the as-synthesized samples were evaluated by Scanning Electron Microscopy (SEM), Transmission Electron Microscopy (TEM), X-ray powder diffraction (XRD), Raman spectroscopy, FT-IR spectroscopy, UV–vis diffuse reflectance spectroscopy (DRS), and photoluminescence spectroscopy (PL). The chemical compositions were analyzed by X-ray photoelectron spectroscopy (XPS). The toxicity of the samples was measured using Mus musculus skin melanoma cells (B16-F10 (ATCC{sup ®} CRL-6475™)) and were found to be nontoxic for human cells. The photocatalytic efficiency of the prepared samples was evaluated by methylene blue (MB) degradation. The best photocatalytic activity was shown by BiVO{sub 4} with 6:3:3 mol percentage of Yb{sup +3}:Er{sup +3}:Tm{sup +3} in all solar light spectrum. The synthesized samples possess low band gap energy and a hollow structure suitable for the better photocatalytic activity. The observed NIR photoactivity supports that the upconversion mechanism is involved in the overall photocatalytic process. Therefore, this approach provides a better alternative upconversion material for integral solar light absorption.

  8. Growth and optical characteristics of Tm-doped AlGaN layer grown by organometallic vapor phase epitaxy

    Science.gov (United States)

    Takatsu, J.; Fuji, R.; Tatebayashi, J.; Timmerman, D.; Lesage, A.; Gregorkiewicz, T.; Fujiwara, Y.

    2018-04-01

    We report on the growth and optical properties of Tm-doped AlGaN layers by organometallic vapor phase epitaxy (OMVPE). The morphological and optical properties of Tm-doped GaN (GaN:Tm) and Tm-doped AlGaN (AlGaN:Tm) were investigated by Nomarski differential interference contrast microscopy and photoluminescence (PL) characterization. Nomarski images reveal an increase of surface roughness upon doping Tm into both GaN and AlGaN layers. The PL characterization of GaN:Tm shows emission in the near-infrared range originating from intra-4f shell transitions of Tm3+ ions. In contrast, AlGaN:Tm also exhibits blue light emission from Tm3+ ions. In that case, the wider band gap of the AlGaN host allows energy transfer to higher states of the Tm3+ ions. With time-resolved PL measurements, we could distinguish three types of luminescent sites of Tm3+ in the AlGaN:Tm layer, having different decay times. Our results confirm that Tm ions can be doped into GaN and AlGaN by OMVPE, and show potential for the fabrication of novel high-color-purity blue light emitting diodes.

  9. Photocatalytic degradation of Rhodamine B dye using Fe doped TiO2 nanocomposites

    Science.gov (United States)

    Barkhade, Tejal; Banerjee, Indrani

    2018-05-01

    The unique properties of titanium dioxide (TiO2) such as high photo catalytic activity, high chemical stability and low toxicity have made it a suitable photocatalyst in recent decades. The effect of modification of TiO2 with doping of iron on its characteristics and photo catalytic efficiency was studied. The change in band gap energy of TiO2 nanoparticles after doping with Fe has been studied. Significant enhancement in photo catalytic property of TiO2 after Fe doping under light exposure conditions has been investigated. Acute exposure to non-biodegradable Rhodamine B resulted in many health problems like burning of eyes, skin irritation, nasal burning, and chest pain etc. Therefore, degradation of this dye is needed to save environment and animals. Considering the similar radius of Fe3+ and Ti4+ ions (respectively 0.64 Å and 0.68 Å), titanium position in the lattice of TiO2 can be replaced by iron cations easily. The undoped and Fe doped TiO2 nano composites were synthesized by sol-gel method, in which 1.0M% of Fe was doped with TiO2 and then the samples were characterized by using FE-SEM, UV-Visible diffuse spectroscopy, Raman Spectroscopy, and FTIR. Photo catalytic degradation of Rhodamine B dye experiment was carried out in visible light range. After 90 min time duration pink colour of dye turned colourless, indicating significant degradation rate with time.

  10. Phosphorus doped graphene by inductively coupled plasma and triphenylphosphine treatments

    Energy Technology Data Exchange (ETDEWEB)

    Shin, Dong-Wook, E-mail: shindong37@skku.edu; Kim, Tae Sung; Yoo, Ji-Beom, E-mail: jbyoo@skku.edu

    2016-10-15

    Highlights: • Substitution doping is a promising method for opening the energy band gap of graphene. • Substitution doping with phosphorus in the graphene lattice has numerous advantage such as high band gap, low formation energy, and high net charge density compared to nitrogen. • V{sub dirac} of Inductively coupled plasma (ICP) and triphenylphosphine (TPP) treated graphene was −57 V, which provided clear evidence of n-type doping. • Substitutional doping of graphene with phosphorus is verified by the XPS spectra of P 2p core level and EELS mapping of phosphorus. • The chemical bonding between P and graphene is very stable for a long time in air (2 months). - Abstract: Graphene is considered a host material for various applications in next-generation electronic devices. However, despite its excellent properties, one of the most important issues to be solved as an electronic material is the creation of an energy band gap. Substitution doping is a promising method for opening the energy band gap of graphene. Herein, we demonstrate the substitutional doping of graphene with phosphorus using inductively coupled plasma (ICP) and triphenylphosphine (TPP) treatments. The electrical transfer characteristics of the phosphorus doped graphene field effect transistor (GFET) have a V{sub dirac} of ∼ − 54 V. The chemical bonding between P and C was clearly observed in XPS spectra, and uniform distribution of phosphorus within graphene domains was confirmed by EELS mapping. The capability for substitutional doping of graphene with phosphorus can significantly promote the development of graphene based electronic devices.

  11. Sn doped TiO{sub 2} nanotube with oxygen vacancy for highly efficient visible light photocatalysis

    Energy Technology Data Exchange (ETDEWEB)

    Li, Jinliang; Xu, Xingtao [Engineering Research Center for Nanophotonics & Advanced Instrument, Ministry of Education, Shanghai Key Laboratory of Magnetic Resonance, School of Physics and Materials Science, Department of Physics, East China Normal University, Shanghai 200062 (China); Liu, Xinjuan [Institute of Coordination Bond Metrology and Engineering, College of Materials Science and Engineering, China Jiliang University, Hangzhou 310018 (China); Yu, Caiyan; Yan, Dong; Sun, Zhuo [Engineering Research Center for Nanophotonics & Advanced Instrument, Ministry of Education, Shanghai Key Laboratory of Magnetic Resonance, School of Physics and Materials Science, Department of Physics, East China Normal University, Shanghai 200062 (China); Pan, Likun, E-mail: lkpan@phy.ecnu.edu.cn [Engineering Research Center for Nanophotonics & Advanced Instrument, Ministry of Education, Shanghai Key Laboratory of Magnetic Resonance, School of Physics and Materials Science, Department of Physics, East China Normal University, Shanghai 200062 (China)

    2016-09-15

    Sn doped TiO{sub 2} nanotube with oxygen vacancy (V{sub o}-Sn−TiO{sub 2}) was successfully synthesized via a facile hydrothermal process and subsequent annealing in nitrogen atmosphere. The morphology, structure and photocatalytic performance of V{sub o}-Sn−TiO{sub 2} in the degradation of nitrobenzene were characterized by scanning electron microscopy, transmission electron microscopy, X-ray diffraction, Raman spectroscopy, X-ray photoelectron spectroscopy, UV–vis absorption spectroscopy, nitrogen adsorption-desorption and electrochemical impedance spectra, respectively. The inner diameter, outer diameter and specific surface area of V{sub o}-Sn−TiO{sub 2} are about 5 nm, 15 nm and 235.54 m{sup 2} g{sup −1}, respectively. The experimental results show that the V{sub o}-Sn−TiO{sub 2} exhibits excellent photocatalytic performance with a maximum degradation rate of 92% in 300 min for nitrobenzene and 94% in 100 min for Rhodamine B and corresponding mineralization rates of 68% and 70% under visible light irradiation. The improved photocatalytic performance is ascribed to the enhanced light absorption and specific surface area as well as the reduced electron-hole pair recombination with the presence of oxygen vacancy and Sn doping in the TiO{sub 2} nanotube. - Highlights: • Photocatalysis is an environmental-friendly technology for nitrobenzene removal. • Sn doped TiO{sub 2} nanotube with oxygen vacancy is fabricated for the first time. • It exhibits excellent photocatalytic performance in degradation of nitrobenzene. • A high degradation rate of 92% is achieved under visible light irradiation.

  12. Valence band electronic structure of Ho-doped La0.67Ca0.33MnO3 using ultra-violet photoemission spectroscopy

    Science.gov (United States)

    Rout, S. K.; Mukharjee, R. N.; Mishra, D. K.; Roul, B. K.; Sekhar, B. R.; Dalai, M. K.

    2017-05-01

    In this manuscript we report the valence band electronic structure of Ho doped La0.67Ca0.33MnO3 using ultraviolet photoemission spectroscopy. We compared the density of states of La0.67Ca0.33MnO3, La0.67Ca0.3Ho0.03MnO3 and La0.64Ho0.03Ca0.33MnO3 near the Fermi level at various temperatures. Significant amount of changes have been observed at higher temperatures (220 K and 300 K) where the near Fermi level density of states increases with Ho doping into La0.67Ca0.33MnO3 indicating the enhancement of magnitude of change in metallicity (conductivity).

  13. Raman spectroscopy of boron-doped single-layer graphene.

    Science.gov (United States)

    Kim, Yoong Ahm; Fujisawa, Kazunori; Muramatsu, Hiroyuki; Hayashi, Takuya; Endo, Morinobu; Fujimori, Toshihiko; Kaneko, Katsumi; Terrones, Mauricio; Behrends, Jan; Eckmann, Axel; Casiraghi, Cinzia; Novoselov, Kostya S; Saito, Riichiro; Dresselhaus, Mildred S

    2012-07-24

    The introduction of foreign atoms, such as nitrogen, into the hexagonal network of an sp(2)-hybridized carbon atom monolayer has been demonstrated and constitutes an effective tool for tailoring the intrinsic properties of graphene. Here, we report that boron atoms can be efficiently substituted for carbon in graphene. Single-layer graphene substitutionally doped with boron was prepared by the mechanical exfoliation of boron-doped graphite. X-ray photoelectron spectroscopy demonstrated that the amount of substitutional boron in graphite was ~0.22 atom %. Raman spectroscopy demonstrated that the boron atoms were spaced 4.76 nm apart in single-layer graphene. The 7-fold higher intensity of the D-band when compared to the G-band was explained by the elastically scattered photoexcited electrons by boron atoms before emitting a phonon. The frequency of the G-band in single-layer substitutionally boron-doped graphene was unchanged, which could be explained by the p-type boron doping (stiffening) counteracting the tensile strain effect of the larger carbon-boron bond length (softening). Boron-doped graphene appears to be a useful tool for engineering the physical and chemical properties of graphene.

  14. Iron solubility in highly boron-doped silicon

    International Nuclear Information System (INIS)

    McHugo, S.A.; McDonald, R.J.; Smith, A.R.; Hurley, D.L.; Weber, E.R.

    1998-01-01

    We have directly measured the solubility of iron in high and low boron-doped silicon using instrumental neutron activation analysis. Iron solubilities were measured at 800, 900, 1000, and 1100thinsp degree C in silicon doped with either 1.5x10 19 or 6.5x10 14 thinspboronthinspatoms/cm 3 . We have measured a greater iron solubility in high boron-doped silicon as compared to low boron-doped silicon, however, the degree of enhancement is lower than anticipated at temperatures >800thinsp degree C. The decreased enhancement is explained by a shift in the iron donor energy level towards the valence band at elevated temperatures. Based on this data, we have calculated the position of the iron donor level in the silicon band gap at elevated temperatures. We incorporate the iron energy level shift in calculations of iron solubility in silicon over a wide range of temperatures and boron-doping levels, providing a means to accurately predict iron segregation between high and low boron-doped silicon. copyright 1998 American Institute of Physics

  15. Tailored white light emission in Eu3+/Dy3+ doped tellurite glass phosphors containing Al3+ ions

    Science.gov (United States)

    Walas, Michalina; Piotrowski, Patryk; Lewandowski, Tomasz; Synak, Anna; Łapiński, Marcin; Sadowski, Wojciech; Kościelska, Barbara

    2018-05-01

    Tellurite glass systems modified by addition of aluminum fluoride AlF3 have been successfully synthesized as host matrices for optically active rare earth ions RE3+ (RE3+ = Eu3+, Dy3+). Samples with different Eu3+ to Dy3+ molar ratio have been studied in order to determine possibility of white light emission via UV excitation. Structural investigations confirmed amorphous character of materials whereas spectroscopic studies brought more insight into glass network's nature. FTIR results shown presence of two features related to tellurite glass matrix (in 490-935 cm-1 spectral region) and another one (940-1250 cm-1) due to aluminum addition. Especially, Al-O and Te-O-Al bonds of AlO4 tetrahedrons have been found. AlO4 units are considered as glass formers that improve network's strength and thermal resistivity against devitrification. Based on XPS studies of Al3+ photoelectron band the existence of Al-O and also Al-F bonds have been examined. Moreover, signals originating from Eu3+ and Dy3+ have been found confirming their valence state. Luminescence results revealed possibility of simultaneous UV excitation of Eu3+ and Dy3+ ions. Excitation with λexc = 390 and 393 nm resulted in white light generation starting from warm white to neutral and cool white depending on Eu3+ concentration and used excitation wavelength. Additionally, increase of decay lifetime of Eu3+ induced by Al3+ presence have been revealed based on luminescence decay analysis. Thus, tellurite glass systems modified by AlF3 and doped with Eu3+/Dy3+ may be considered as promising candidates for white light emitting sources.

  16. Electronic structure of p type Delta doped systems

    International Nuclear Information System (INIS)

    Gaggero S, L.M.; Perez A, R.

    1998-01-01

    We summarize of the results obtained for the electronic structure of quantum wells that consist in an atomic layer doped with impurities of p type. The calculations are made within the frame worth of the wrapper function approach to independent bands and with potentials of Hartree. We study the cases reported experimentally (Be in GaAs and B in Si). We present the levels of energy, the wave functions and the rate of the electronic population between the different subbands, as well as the dependence of these magnitudes with the density of impurities in the layer. The participation of the bans of heavy holes is analysed, light and split-off band in the total electronic population. The effect of the temperature is discussed and we give a possible qualitative explanation of the experimental optical properties. (Author)

  17. Pulsed laser deposited Al-doped ZnO thin films for optical applications

    Directory of Open Access Journals (Sweden)

    Gurpreet Kaur

    2015-02-01

    Full Text Available Highly transparent and conducting Al-doped ZnO (Al:ZnO thin films were grown on glass substrates using pulsed laser deposition technique. The profound effect of film thickness on the structural, optical and electrical properties of Al:ZnO thin films was observed. The X-ray diffraction depicts c-axis, plane (002 oriented thin films with hexagonal wurtzite crystal structure. Al-doping in ZnO introduces a compressive stress in the films which increase with the film thickness. AFM images reveal the columnar grain formation with low surface roughness. The versatile optical properties of Al:ZnO thin films are important for applications such as transparent electromagnetic interference (EMI shielding materials and solar cells. The obtained optical band gap (3.2–3.08 eV was found to be less than pure ZnO (3.37 eV films. The lowering in the band gap in Al:ZnO thin films could be attributed to band edge bending phenomena. The photoluminescence spectra gives sharp visible emission peaks, enables Al:ZnO thin films for light emitting devices (LEDs applications. The current–voltage (I–V measurements show the ohmic behavior of the films with resistivity (ρ~10−3 Ω cm.

  18. Surface correlation effects in two-band strongly correlated slabs.

    Science.gov (United States)

    Esfahani, D Nasr; Covaci, L; Peeters, F M

    2014-02-19

    Using an extension of the Gutzwiller approximation for an inhomogeneous system, we study the two-band Hubbard model with unequal band widths for a slab geometry. The aim is to investigate the mutual effect of individual bands on the spatial distribution of quasi-particle weight and charge density, especially near the surface of the slab. The main effect of the difference in band width is the presence of two different length scales corresponding to the quasi-particle profile of each band. This is enhanced in the vicinity of the critical interaction of the narrow band where an orbitally selective Mott transition occurs and a surface dead layer forms for the narrow band. For the doped case, two different regimes of charge transfer between the surface and the bulk of the slab are revealed. The charge transfer from surface/center to center/surface depends on both the doping level and the average relative charge accumulated in each band. Such effects could also be of importance when describing the accumulation of charges at the interface between structures made of multi-band strongly correlated materials.

  19. Visible light photocatalysts (Fe, N):TiO{sub 2} from ammonothermally processed, solvothermal self-assembly derived Fe-TiO{sub 2} mesoporous microspheres

    Energy Technology Data Exchange (ETDEWEB)

    Zou, Mingming; Xiong, Fengqiang; Ganeshraja, Ayyakannu Sundaram [Dalian Institute of Chemical Physics (DICP), Chinese Academy of Sciences, 457 Zhongshan Road, Dalian, Liaoning, 116023 (China); Feng, Xiaohua; Wang, Chuanxi [Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201 (China); Thomas, Tiju, E-mail: tijuthomas@iitm.ac.in [Department of Metallurgical and Materials Engineering, Indian Institute of Technology Madras, Chennai, 600036, Tamil Nadu (India); Yang, Minghui, E-mail: myang@dicp.ac.cn [Dalian Institute of Chemical Physics (DICP), Chinese Academy of Sciences, 457 Zhongshan Road, Dalian, Liaoning, 116023 (China)

    2017-07-01

    Iron (III) and nitrogen co-doped mesoporous TiO{sub 2} microspheres (Fe-N-TiO{sub 2}) are prepared using a self-assembly based solvothermal process followed by an ammonothermal method. Among all samples, 1 mol.% of Fe dopants and 500 °C nitridation (for 2 h) gives the highest visible light photoactivity. Results imply that the Fe{sup 3+}/Fe{sup 2+} dopant trap energy level introduced within the band gap in mildly Fe (∼1 at%) doped TiO{sub 2} and the mesoporous nature of the material, both aid in the observed catalytic performance. Subjecting Fe-TiO{sub 2} samples to ammonothermal process induces oxygen vancancies, and substitutional and interstitial N. This reduces optical band gap, and introduces local states. The lower band gap and local states together aid in the absorption of visible light and separation of charge carriers. Co-dopants are distributed uniformly in the best photocatalysts. The active species generated in the photocatalytic system is shown to be singlet molecular oxygen ({sup 1}O{sub 2}) using selective radical quenchers. - Highlights: • Iron (III) and nitrogen co-doped mesoporous TiO{sub 2} microspheres (Fe-N-TiO{sub 2}) are prepared. • Fe{sup 3+}/Fe{sup 2+} dopant trap energy level introduced within the band gap in Fe (∼1 at%) doped TiO{sub 2}. • Subjecting Fe-TiO{sub 2} samples to ammonothermal process induces oxygen vancancies, and causes substitutional and interstitial N. • Co-dopants are distributed uniformly in the best photocatalysts. • Active species generated is shown to be singlet molecular oxygen ({sup 1}O{sub 2}).

  20. Preparation of calcium-doped boron nitride by pulsed laser deposition

    International Nuclear Information System (INIS)

    Anzai, Atsushi; Fuchigami, Masayo; Yamanaka, Shoji; Inumaru, Kei

    2012-01-01

    Highlights: ► Ca-doped boron nitride was prepared by pulsed laser deposition. ► The films do not have long range order structure in terms of XRD. ► But the films had short-range order structure of h-BN sheets. ► Ca-free films had the same optical band gap as crystalline bulk h-BN (5.8 eV.) ► Ca-doping brought about decreases of the optical band gap by ca. 0.4 eV. -- Abstract: Calcium-doped BN thin films Ca x BN y (x = 0.05–0.1, y = 0.7–0.9) were grown on α-Al 2 O 3 (0 0 1) substrates by pulsed laser deposition (PLD) using h-BN and Ca 3 N 2 disks as the targets under nitrogen radical irradiation. Infrared ATR spectra demonstrated the formation of short range ordered structure of BN hexagonal sheets, while X-ray diffraction gave no peak indicating the absence of long-range order structure in the films. It was notable that Ca-doped film had 5.45–5.55 eV of optical band gap, while the band gap of Ca-free films was 5.80–5.85 eV. This change in the band gap is ascribed to interaction of Ca with the BN sheets; first principle calculations on h-BN structure indicated that variation of inter-plane distance between the BN layers did not affect the band gap. This study highlights that PLD could prepare BN having short-range structure of h-BN sheets and being doped with electropositive cation which varies the optical band gap of the films.

  1. Potential thermoelectric performance of hole-doped Cu2O

    International Nuclear Information System (INIS)

    Chen, Xin; Parker, David; Du, Mao-Hua; Singh, David J

    2013-01-01

    High thermoelectric performance in oxides requires stable conductive materials that have suitable band structures. Here we show, based on an analysis of the thermopower and related properties using first-principles calculations and Boltzmann transport theory in the relaxation time approximation, that hole-doped Cu 2 O may be such a material. We find that hole-doped Cu 2 O has a high thermopower of above 200 μV K −1 even with doping levels as high as 5.2 × 10 20 cm −3 at 500 K, mainly attributed to the heavy valence bands of Cu 2 O. This is reminiscent of the cobaltate family of high-performance oxide thermoelectrics and implies that hole-doped Cu 2 O could be an excellent thermoelectric material if suitably doped. (paper)

  2. One-step synthesis of lightly doped porous silicon nanowires in HF/AgNO3/H2O2 solution at room temperature

    International Nuclear Information System (INIS)

    Bai, Fan; Li, Meicheng; Song, Dandan; Yu, Hang; Jiang, Bing; Li, Yingfeng

    2012-01-01

    One-step synthesis of lightly doped porous silicon nanowire arrays was achieved by etching the silicon wafer in HF/AgNO 3 /H 2 O 2 solution at room temperature. The lightly doped porous silicon nanowires (pNWs) have circular nanopores on the sidewall, which can emit strong green fluorescence. The surface morphologies of these nanowires could be controlled by simply adjusting the concentration of H 2 O 2 , which influences the distribution of silver nanoparticles (Ag NPs) along the nanowire axis. A mechanism based on Ag NPs-induced lateral etching of nanowires was proposed to explain the formation of pNWs. The controllable and widely applicable synthesis of pNWs will open their potential application to nanoscale photoluminescence devices. - Graphical abstract: The one-step synthesis of porous silicon nanowire arrays is achieved by chemical etching of the lightly doped p-type Si (100) wafer at room temperature. These nanowires exhibit strong green photoluminescence. SEM, TEM, HRTEM and photoluminescence images of pNWs. The scale bars of SEM, TEM HRTEM and photoluminescence are 10 μm, 20 nm, 10 nm, and 1 μm, respectively. Highlights: ► Simple one-step synthesis of lightly doped porous silicon nanowire arrays is achieved at RT. ► Etching process and mechanism are illustrated with etching model from a novel standpoint. ► As-prepared porous silicon nanowire emits strong green fluorescence, proving unique property.

  3. Synergistic Effect of Fluorinated and N Doped TiO2 Nanoparticles Leading to Different Microstructure and Enhanced Photocatalytic Bacterial Inactivation

    Directory of Open Access Journals (Sweden)

    Irena Milosevic

    2017-11-01

    Full Text Available This work focuses on the development of a facile and scalable wet milling method followed by heat treatment to prepare fluorinated and/or N-doped TiO2 nanopowders with improved photocatalytic properties under visible light. The structural and electronic properties of doped particles were investigated by various techniques. The successful doping of TiO2 was confirmed by X-ray photoelectron spectroscopy (XPS, and the atoms appeared to be mainly located in interstitial positions for N whereas the fluorination is located at the TiO2 surface. The formation of intragap states was found to be responsible for the band gap narrowing leading to the faster bacterial inactivation dynamics observed for the fluorinated and N doped TiO2 particles compared to N-doped TiO2. This was attributed to a synergistic effect. The results presented in this study confirmed the suitability of the preparation approach for the large-scale production of cost-efficient doped TiO2 for effective bacterial inactivation.

  4. A fast and effective method for N-doping TiO{sub 2} by post treatment with liquid ammonia: visible light photocatalysis

    Energy Technology Data Exchange (ETDEWEB)

    Powell, Michael J.; Palgrave, Robert G.; Dunnill, Charles W.; Parkin, Ivan P.

    2014-07-01

    TiO{sub 2} thin films prepared by sol–gel synthesis were N-doped by post treating with liquid ammonia and annealing at 500 °C. Characterisation by X-ray diffraction and Raman spectroscopy confirmed that the anatase crystal type was retained and present in all samples. Scanning electron microscopy showed that treatment with liquid ammonia had no significant effect on the film morphology. Functional testing under filtered while light conditions involving water contact angle, and the photo destruction of both Resazurin and Stearic acid showed the ammonia treated samples to be active visible light photocatalysts in contrast to the pure TiO{sub 2} and the blank controls. X-ray Photoelectron Spectroscopy studies indicate the presence of interstitial nitrogen (N{sub 1s} = 400 eV) suggesting that the origin of the enhanced photocatalytic activity is most likely due to oxygen vacancies created by the interstitial nitrogen incorporation. This synthesis method utilises a simple, inexpensive and highly effective post treatment route to N-dope TiO{sub 2} and produces visible light photocatalysts with potential applications in self-cleaning and healthcare environments. - Highlights: • Synthesis and characterisation of N-doped TiO{sub 2} thin films • N-doping by a post treatment with liquid ammonia • Enhanced photocatalytic activity • Easy enhancement of current TiO{sub 2} based technologies.

  5. The diverse broad-band light-curves of Swift GRBs reproduced with the cannonball model

    CERN Document Server

    Dado, Shlomo; De Rújula, A

    2009-01-01

    Two radiation mechanisms, inverse Compton scattering (ICS) and synchrotron radiation (SR), suffice within the cannonball (CB) model of long gamma ray bursts (LGRBs) and X-ray flashes (XRFs) to provide a very simple and accurate description of their observed prompt emission and afterglows. Simple as they are, the two mechanisms and the burst environment generate the rich structure of the light curves at all frequencies and times. This is demonstrated for 33 selected Swift LGRBs and XRFs, which are well sampled from early time until late time and well represent the entire diversity of the broad band light curves of Swift LGRBs and XRFs. Their prompt gamma-ray and X-ray emission is dominated by ICS of glory light. During their fast decline phase, ICS is taken over by SR which dominates their broad band afterglow. The pulse shape and spectral evolution of the gamma-ray peaks and the early-time X-ray flares, and even the delayed optical `humps' in XRFs, are correctly predicted. The canonical and non-canonical X-ra...

  6. Optical and electrical improvements of semipolar (1 1 −2 2) GaN-based light emitting diodes by Si doping of n-GaN template

    International Nuclear Information System (INIS)

    Lee, Jae-Hwan; Han, Sang-Hyun; Song, Ki-Ryong; Lee, Sung-Nam

    2014-01-01

    Highlights: • In semipolar GaN, Si-doping is effective to reduce out-of plane PSFs toward [1−100]. • Interfacial quality of semipolar QWs was improved by increasing SiH4 flow of n-GaN. • Electrical properties of semipolar GaN were improved by increasing Si doping. • Light output power of semipolar LEDs were increased with SiH4 flow rate of n-type GaN. - Abstract: We report that the performance of semipolar (1 1 −2 2) GaN-based light-emitting diodes (LEDs) was improved by increasing the Si-doping concentration of n-type GaN templates. In-plane and out-of plane high-resolution X-ray diffraction demonstrated that crystal defects such as threading dislocation, partial stacking faults and basal stacking faults, were significantly decreased by increasing the Si-doping concentration. This resulted in the increase of carrier mobility due to reduction of the defect-scattering effect. Furthermore, the quality of InGaN/GaN quantum-well interfaces was improved by increasing the Si-doping concentration of the n-type GaN template. Based on these results, we suggest that the light-output power and operation voltage of semipolar (1 1 −2 2) GaN-based LEDs would be improved by increasing Si doping concentration of n-type GaN templates

  7. The Electronic Properties of O-Doped Pure and Sulfur Vacancy-Defect Monolayer WS₂: A First-Principles Study.

    Science.gov (United States)

    Wang, Weidong; Bai, Liwen; Yang, Chenguang; Fan, Kangqi; Xie, Yong; Li, Minglin

    2018-01-31

    Based on the density functional theory (DFT), the electronic properties of O-doped pure and sulfur vacancy-defect monolayer WS₂ are investigated by using the first-principles method. For the O-doped pure monolayer WS₂, four sizes (2 × 2 × 1, 3 × 3 × 1, 4 × 4 × 1 and 5 × 5 × 1) of supercell are discussed to probe the effects of O doping concentration on the electronic structure. For the 2 × 2 × 1 supercell with 12.5% O doping concentration, the band gap of O-doped pure WS₂ is reduced by 8.9% displaying an indirect band gap. The band gaps in 3 × 3 × 1 and 4 × 4 × 1 supercells are both opened to some extent, respectively, for 5.55% and 3.13% O doping concentrations, while the band gap in 5 × 5 × 1 supercell with 2.0% O doping concentration is quite close to that of the pure monolayer WS₂. Then, two typical point defects, including sulfur single-vacancy (V S ) and sulfur divacancy (V 2S ), are introduced to probe the influences of O doping on the electronic properties of WS₂ monolayers. The observations from DFT calculations show that O doping can broaden the band gap of monolayer WS₂ with V S defect to a certain degree, but weaken the band gap of monolayer WS₂ with V 2S defect. Doping O element into either pure or sulfur vacancy-defect monolayer WS₂ cannot change their band gaps significantly, however, it still can be regarded as a potential method to slightly tune the electronic properties of monolayer WS₂.

  8. Red light emission from ZnO:Eu"3"+|CuSCN hetero-junction under cathodic polarization

    International Nuclear Information System (INIS)

    Sirimanne, P.M.; Minoura, H.

    2015-01-01

    Eu"3"+ ions were bonded to ZnO ceramic via organic ligand. Surface bonded Eu"3"+ ions were exhibited specific luminescence bands due to electron transitions between f–f intra-configurationally transitions. Further enhancement of luminescence bands was observed by attaching selected oligomers to Eu"3"+ ions. A hetero-junction was prepared by depositing copper-thiocyanate on Eu"3"+ ions bonded ZnO ceramic. Red light emission was observed from surface bonded Eu"3"+ ions in ZnO:Eu"3"+|CuSCN hetero-junction under reverse bias. - Highlights: • Europium doped ZnO ceramic exhibits photo-luminescence. • Semiconductor hetro-junction was prepared. • ZnO:Eu"3"+|CuSCN hetero-junction emits red light under reverse bias.

  9. Anatase phase stability and doping concentration dependent refractivity in codoped transparent conducting TiO2 films

    International Nuclear Information System (INIS)

    Chen, T L; Furubayashi, Y; Hirose, Y; Hitosugi, T; Shimada, T; Hasegawa, T

    2007-01-01

    Nb 0.06 Sn x Ti 0.94-x O 2 (x ≤ 0.3) thin films were grown by a pulsed-laser deposition method with varying Sn concentration. Through a combinatorial technique, we find that Sn concentration can reach a maximum of about x = 0.3 while maintaining the stable anatase phase and epitaxy. A doping concentration dependence of the refractivity is revealed, in which refractivity reduction at a wavelength of λ = 500 nm is estimated to be 12.4% for Nb 0.06 Sn 0.3 Ti 0.64 O 2 thin film. Sn doping induced band-gap blue shift can be contributed to the mixing of extended Sn 5s orbitals with the conduction band of TiO 2 . Low resistivity on the order of 10 -4 Ω cm at room temperature and high internal transmittance of more than 95% in the visible light region are exhibited for Nb 0.06 Sn x Ti 0.94-x O 2 thin films (x ≤ 0.2). Optical and transport analyses demonstrate that doping Sn into Nb 0.06 Ti 0.94 O 2 can reduce the refractivity while maintaining low resistivity and high transparency

  10. The study of electronic structures and optical properties of Al-doped GaN

    International Nuclear Information System (INIS)

    Li Enling; Hou Liping; Liu Mancang; Xi Meng; Wang Xiqiang; Dai Yuanbin; Li Lisha

    2011-01-01

    The electronic structures and optical properties of undoped and Al-doped GaN (Al x Ga 1-x N, x=0.0625, 0.125, 0.25) have been studied based on generalized gradient approximation (GGA) method of density functional theory (DFT). The differences of the electronic structures and optical properties of undoped and Al-doped GaN have been discussed in detail. The result shows: according to total density of state of undoped and Al-doped GaN, the conduction band becomes width and moves to high energy level with gradual increase concentration of Al impurity. Impurity energy band isn't found in energy band structures of Al x Ga 1-x N, the same as energy band structures of undoped GaN, but the band gaps gradually become wide with increase of Al impurity. Absorption spectra of undoped and Al-doped GaN of main absorption peak moves to high energy level with increase of Al impurity.

  11. Ultralow Self-Doping in 2D Hybrid Perovskite Single Crystals

    KAUST Repository

    Peng, Wei

    2017-06-28

    Unintentional self-doping in semiconductors through shallow defects is detrimental to optoelectronic device performance. It adversely affects junction properties and it introduces electronic noise. This is especially acute for solution-processed semiconductors, including hybrid perovskites, which are usually high in defects due to rapid crystallization. Here, we uncover extremely low self-doping concentrations in single crystals of (C6H5C2H4NH3)2PbI4・(CH3NH3PbI3)n-1 (n=1, 2, and 3)—over three orders of magnitude lower than those of typical three-dimensional hybrid perovskites—by analyzing their conductivity behavior. We propose that crystallization of hybrid perovskites containing large organic cations suppresses defect formation and thus favors a low self-doping level. To exemplify the benefits of this effect, we demonstrate extraordinarily high light-detectivity (1013 Jones) in (C6H5C2H4NH3)2PbI4・(CH3NH3PbI3)n-1 photoconductors due to the reduced electronic noise, which makes them particularly attractive for the detection of weak light signals. Furthermore, the low self-doping concentration reduces the equilibrium charge carrier concentration in (C6H5C2H4NH3)2PbI4・(CH3NH3PbI3)n-1, advantageous in the design of p-i-n heterojunction solar cells by optimizing band alignment and promoting carrier depletion in the intrinsic perovskite layer, thereby enhancing charge extraction.

  12. Band Structure Engineering of Cs2AgBiBr6 Perovskite through Order-Disordered Transition: A First-Principle Study.

    Science.gov (United States)

    Yang, Jingxiu; Zhang, Peng; Wei, Su-Huai

    2018-01-04

    Cs 2 AgBiBr 6 was proposed as one of the inorganic, stable, and nontoxic replacements of the methylammonium lead halides (CH 3 NH 3 PbI 3 , which is currently considered as one of the most promising light-harvesting material for solar cells). However, the wide indirect band gap of Cs 2 AgBiBr 6 suggests that its application in photovoltaics is limited. Using the first-principle calculation, we show that by controlling the ordering parameter at the mixed sublattice, the band gap of Cs 2 AgBiBr 6 can vary continuously from a wide indirect band gap of 1.93 eV for the fully ordered double-perovskite structure to a small pseudodirect band gap of 0.44 eV for the fully random alloy. Therefore, one can achieve better light absorption simply by controlling the growth temperature and thus the ordering parameters and band gaps. We also show that controlled doping in Cs 2 AgBiBr 6 can change the energy difference between ordered and disordered Cs 2 AgBiBr 6 , thus providing further control of the ordering parameters and the band gaps. Our study, therefore, provides a novel approach to carry out band structure engineering in the mixed perovskites for optoelectronic applications.

  13. Variation in band gap of lanthanum chromate by transition metals doping LaCr{sub 0.9}A{sub 0.1}O{sub 3} (A:Fe/Co/Ni)

    Energy Technology Data Exchange (ETDEWEB)

    Naseem, Swaleha, E-mail: wasiamu@gmail.com; Khan, Wasi, E-mail: wasiamu@gmail.com; Saad, A. A., E-mail: wasiamu@gmail.com; Shoeb, M., E-mail: wasiamu@gmail.com; Ahmed, Hilal, E-mail: wasiamu@gmail.com; Naqvi, A. H. [Centre of Excellence in Materials Science (Nanomaterials), Department of Applied Physics, Z.H. College of Engg. and Technology, Aligarh Muslim University, Aligarh-202002 (India); Husain, Shahid [Department of Physics, Aligarh Muslim University, Aligarh-202002 (India)

    2014-04-24

    Transition metal (Fe, Co, Ni) doped lanthanum chromate (LaCrO{sub 3}) nanoparticles (NPs) were prepared by gel combustion method and calcinated at 800°C. Microstructural studies were carried by XRD and SEM/EDS techniques. The results of structural characterization show the formation of all samples in single phase without any impurity. Optical properties were studied by UV- visible and photoluminescence techniques. The energy band gap was calculated and the variation was observed with the doping of transition metal ions. Photoluminescence spectra show the emission peak maxima for the pure LaCrO{sub 3} at about 315 nm. Influence of Fe, Co, Ni doping was studied and compared with pure lanthanum chromate nanoparticles.

  14. One-pot synthesis of copper-doped graphitic carbon nitride nanosheet by heating Cu–melamine supramolecular network and its enhanced visible-light-driven photocatalysis

    International Nuclear Information System (INIS)

    Gao, Junkuo; Wang, Jiangpeng; Qian, Xuefeng; Dong, Yingying; Xu, Hui; Song, Ruijing; Yan, Chenfeng; Zhu, Hangcheng; Zhong, Qiwei

    2015-01-01

    Here we report a novel synthetic pathway for preparation of Cu-doped g-C 3 N 4 (Cu-g-C 3 N 4 ) with nanosheet morphology by using a two dimensional Cu–melamine supramolecular network as both sacrificial template and precursor. The specific surface area of Cu-g-C 3 N 4 is 40.86 m 2 g −1 , which is more than 7 times larger than that of pure g-C 3 N 4 . Cu-g-C 3 N 4 showed strong optical absorption in the visible-light region and expanded the absorption to the near-infrared region. The uniform nanosheet morphology, higher surface area and strong visible-light absorption have enabled Cu-g-C 3 N 4 exhibiting enhanced visible light photocatalytic activity for the photo-degradation of methylene blue (MB). The results indicate that metal–melamine supramolecular network can be promising precursors for the one step preparation of efficient metal-doped g-C 3 N 4 photocatalysts. - Graphical abstract: Cu-doped g-C 3 N 4 (Cu-g-C 3 N 4 ) with nanosheet morphology was fabricated via a simple one step preparation by using a two dimensional Cu–melamine supra-molecular network as both sacrificial template and precursor. - Highlights: • Cu-doped g-C 3 N 4 (Cu-g-C 3 N 4 ) with nanosheet morphology was prepared. • Cu-g-C 3 N 4 showed strong optical absorption in the visible-light region. • Cu-g-C 3 N 4 exhibits enhanced visible light photocatalytic activity

  15. Hybrid Structure White Organic Light Emitting Diode for Enhanced Efficiency by Varied Doping Rate.

    Science.gov (United States)

    Kim, Dong-Eun; Kang, Min-Jae; Park, Gwang-Ryeol; Kim, Nam-Kyu; Lee, Burm-Jong; Kwon, Young-Soo; Shin, Hoon-Kyu

    2016-03-01

    Novel materials based on Zn(HPB)2 and Ir-complexes were synthesized as blue or red emitters, respectively. White organic light emitting diodes were fabricated using the Zn(HPB)2 as a blue emitting layer, Ir-complexes as a red emitting layer and Alq3 as a green emitting layer. The obtained experimental results, were based on white OLEDs fabricated using double emission layers of Zn(HPB)2 and Alq3:Ir-complexes. The doping rate of the Ir-complexes was varied at 0.4%, 0.6%, 0.8% and 1.0%. When the doping rate of the Alq3:Ir-complexes was 0.6%, a white emission was achieved. The Commission Internationale de l'Eclairage coordinates of the device's white emission were (0.316, 0.331) at an applied voltage of 10.75 V.

  16. Flexible organic light-emitting diodes consisting of a platinum doped indium tin oxide anode

    International Nuclear Information System (INIS)

    Hsu, C-M; Huang, C-Y; Cheng, H-E; Wu, W-T

    2009-01-01

    This paper demonstrates that a flexible organic light-emitting diode (OLED) with a platinum (Pt)-doped indium tin oxide (ITO) anode could show superior electro-optical characteristics to those of a conventional device. The threshold voltage and turn-on voltage of an OLED device consisting of an aluminium/lithium fluoride/tris(8-hydroxyquinoline) aluminium/N,N'-bis-(1-naphthyl)-N,N'-diphenyl-1,1'-biphenyl-4, 4'-diamine/Pt-doped ITO/ITO structure were reduced by 1.2 V and 0.8 V, respectively. Current efficiency was found improved for a driving voltage of less than 6.5 V as a result of the enhanced hole-injection rate, attributed mainly to the elevated surface work function and partly reduced surface roughness of ITO by the incorporated Pt atoms in the ITO matrix.

  17. Surface plasmon enhanced SWIR absorption at the ultra n-doped substrate/PbSe nanostructure layer interface

    Science.gov (United States)

    Wittenberg, Vladimir; Rosenblit, Michael; Sarusi, Gabby

    2017-08-01

    This work presents simulation results of the plasmon enhanced absorption that can be achieved in the short wavelength infrared (SWIR - 1200 nm to 1800 nm) spectral range at the interface between ultra-heavily doped substrates and a PbSe nanostructure non-epitaxial growth absorbing layer. The absorption enhancement simulated in this study is due to surface plasmon polariton (SPP) excitation at the interface between these ultra-heavily n-doped GaAs or GaN substrates, which are nearly semimetals to SWIR light, and an absorption layer made of PbSe nano-spheres or nano-columns. The ultra-heavily doped GaAs or GaN substrates are simulated as examples, based on the Drude-Lorentz permittivity model. In the simulation, the substrates and the absorption layer were patterned jointly to forma blazed lattice, and then were back-illuminated using SWIR with a central wavelength of 1500 nm. The maximal field enhancement achieved was 17.4 with a penetration depth of 40 nm. Thus, such architecture of an ultra-heavily doped semiconductor and infrared absorbing layer can further increase the absorption due to the plasmonic enhanced absorption effect in the SWIR spectral band without the need to use a metallic layer as in the case of visible light.

  18. Experimental study on the 4H-SiC-based VDMOSFETs with lightly doped P-well field-limiting rings termination

    Science.gov (United States)

    He, Yan Jing; Lv, Hong Liang; Tang, Xiao Yan; Song, Qing Wen; Zhang, Yi Meng; Han, Chao; Zhang, Yi Men; Zhang, Yu Ming

    2017-03-01

    A lightly doped P-well field-limiting rings (FLRs) termination on 4H-SiC vertical double-implanted metal-oxide-semiconductor field-effect transistors (VDMOSFETs) has been investigated. Based on the simulation, the proposed termination applied to 4H-SiC VDMOSFET could achieve an almost same breakdown voltage (BV) and have the advantage of lower ion-implantation damage comparing with P+ FLRs termination. Meanwhile, this kind of termination also reduces the difficulty and consumption of fabrication process. 4H-SiC VDMOSFETs with lightly doped P-well (FLRs) termination have been fabricated on 10 μm thick epi-layer with nitrogen doping concentration of 6.2 × 1015 cm-3. The maximum breakdown voltage of the 4H-SiC VDMOSFETs has achieved as high as 1610 V at a current of 15 μA, which is very close to the simulated result of 1643 V and about 90% of the plane parallel breakdown voltage of 1780 V. It is considered that P-well FLRs termination is an effective, robust and process-tolerant termination structure suitable for 4H-SiC VDMOSFET.

  19. Influence of pump-field scattering on nonclassical-light generation in a photonic-band-gap nonlinear planar waveguide

    International Nuclear Information System (INIS)

    Perina, Jan Jr.; Sibilia, Concita; Tricca, Daniela; Bertolotti, Mario

    2005-01-01

    Optical parametric process occurring in a nonlinear planar waveguide can serve as a source of light with nonclassical properties. The properties of the generated fields are substantially modified by scattering of the nonlinearly interacting fields in a photonic-band-gap structure inside the waveguide. A general quantum model of linear operator amplitude corrections to the amplitude mean values and its numerical analysis provide conditions for efficient squeezed-light generation as well as generation of light with sub-Poissonian photon-number statistics. The destructive influence of phase mismatch of the nonlinear interaction can fully be compensated using a suitable photonic-band-gap structure inside the waveguide. Also an increase of the signal-to-noise ratio of the incident optical field can be reached in the waveguide

  20. Tuning the emission of aqueous Cu:ZnSe quantum dots to yellow light window

    International Nuclear Information System (INIS)

    Wang, Chunlei; Hu, Zhiyang; Xu, Shuhong; Wang, Yanbin; Zhao, Zengxia; Wang, Zhuyuan; Cui, Yiping

    2015-01-01

    Synthesis of internally doped Cu:ZnSe QDs in an aqueous solution still suffers from narrow tunable emissions from the blue to green light window. In this work, we extended the emission window of aqueous Cu:ZnSe QDs to the yellow light window. Our results show that high solution pH, multiple injections of Zn precursors, and nucleation doping strategy are three key factors for preparing yellow emitted Cu:ZnSe QDs. All these factors can depress the reactivity of CuSe nuclei and Zn monomers, promoting ZnSe growth outside CuSe nuclei rather than form ZnSe nuclei separately. With increased ZnSe QD size, the conduction band and nearby trap state energy levels shift to higher energy sites, causing Cu:ZnSe QDs to have a much longer emission. (paper)

  1. Co-doping effects on luminescence and scintillation properties of Ce doped Lu3Al5O12 scintillator

    International Nuclear Information System (INIS)

    Kamada, Kei; Nikl, Martin; Kurosawa, Shunsuke; Beitlerova, Alena; Nagura, Aya; Shoji, Yasuhiro; Pejchal, Jan; Ohashi, Yuji; Yokota, Yuui; Yoshikawa, Akira

    2015-01-01

    The Mg, Ca, Sr and Ba 200 ppm co-doped Ce:Lu 3 Al 5 O 12 single crystals were prepared by micro pulling down method. Absorption and luminescence spectra were measured together with several other scintillation characteristics, namely the scintillation decay and light yield to reveal the effect of the co-doping. The scintillation decays were accelerated by both Mg and Ca co-dopants. The Mg co-doped samples showed the fastest decay and the highest light yield among the co-doped samples

  2. Transparency and spontaneous emission in a densely doped photonic band gap material

    Energy Technology Data Exchange (ETDEWEB)

    Singh, Mahi R [Department of Physics and Astronomy, University of Western Ontario, London N6A 3K7 (Canada)

    2006-12-28

    The susceptibility has been calculated for a photonic crystal in the presence of spontaneous cancellation and dipole-dipole interaction. The crystal is densely doped with an ensemble of four-level nano-particles in Y-type configuration. Probe and a pump laser fields are applied to manipulate the absorption coefficient of the system. The expression of the susceptibility has been calculated in the linear response regime of the probe field but nonlinear terms are included for the pump field. It is found that in the presence of spontaneous emission cancellation there is an increase in the height of the two absorption peaks however the phenomenon of electromagnetically induced transparency (EIT) is not affected. On the other hand, there is a change in the height and location of the two peaks in the presence of dipole-dipole interactions. For certain values the particle density of the system can be switched from the EIT state to the non-EIT state. It is also found that when the resonance energies for two spontaneous emission channels lie close to the band edge, the EIT phenomenon disappears.

  3. A single-phase white light emitting Pr3+ doped Ba2CaWO6 phosphor: synthesis, photoluminescence and optical properties

    Science.gov (United States)

    Sreeja, E.; Vidyadharan, Viji; Jose, Saritha K.; George, Anns; Joseph, Cyriac; Unnikrishnan, N. V.; Biju, P. R.

    2018-04-01

    Pr3+ doped Ba2CaWO6 phosphor were prepared by traditional high-temperature solid-state reaction technique. The structure evolution was systematically investigated by X-ray diffraction (XRD), energy-dispersive X-ray spectroscopy (EDS), Fourier-transform infrared spectroscopy (FTIR), scanning electron microscopy (SEM) and transmission electron microscopy (TEM) analysis. The X-ray powder diffraction patterns indicate that the prepared phosphors crystallized in the cubic double-perovskite structure. The functional groups were identified using FTIR spectra and the elements present in the composition were confirmed by the EDS profile. The morphology of the phosphor was identified using SEM and TEM analysis. The PL spectra illustrated that these phosphors could be efficiently excited by charge transfer band of host and the maximum luminescence intensity was observed at 0.06 wt% of Pr3+ ion. Upon the charge transfer band excitation, emission spectra showed peaks at 489, 532, 647, 685 and 737 nm corresponding to 3P0→3H4, 3P1→3H5, 3P0→3F2, 3P0→3F3 and 3P0→3F4 transitions respectively. The concentration quenching of Ba2CaWO6:Pr3+ phosphor can be mainly attributed to dipole-dipole interaction. The CIE coordinates were estimated to be close to the white region. The decay curves are well fitted with double exponential decay models. The standard and modified Judd-Ofelt (JO) theories were used to determine the Judd-Ofelt intensity parameters, radiative transition probabilities and branching ratios. The optical properties indicate that Ba2CaWO6:Pr3+ phosphors can produce white light emission from a single phase host and its potential application for solid-state lighting and display devices.

  4. First principles calculation of lithium-phosphorus co-doped diamond

    Directory of Open Access Journals (Sweden)

    Q.Y. Shao

    2013-03-01

    Full Text Available We calculate the density of states (DOS and the Mulliken population of the diamond and the co-doped diamonds with different concentrations of lithium (Li and phosphorus (P by the method of the density functional theory, and analyze the bonding situations of the Li-P co-doped diamond thin films and the impacts of the Li-P co-doping on the diamond conductivities. The results show that the Li-P atoms can promote the split of the diamond energy band near the Fermi level, and improve the electron conductivities of the Li-P co-doped diamond thin films, or even make the Li-P co-doped diamond from semiconductor to conductor. The affection of Li-P co-doping concentration on the orbital charge distributions, bond lengths and bond populations is analyzed. The Li atom may promote the split of the energy band near the Fermi level and also may favorably regulate the diamond lattice distortion and expansion caused by the P atom.

  5. a Study of Oxygen Precipitation in Heavily Doped Silicon.

    Science.gov (United States)

    Graupner, Robert Kurt

    processes. This could lead to more effective control and use of oxygen precipitation for gettering. One of the principal purposes of this thesis is the extension of the infrared interstitial oxygen measurement technique to situations outside the measurement capacities of the standard technique. These situations include silicon slices exhibiting interfering precipitate absorption bands and heavily doped n-type silicon wafers. A new method is presented for correcting for the effect of multiple reflections in silicon wafers with optically rough surfaces. The technique for the measurement of interstitial oxygen in heavily doped n-type wafers is then used to perform a comparative study of oxygen precipitation in heavily antimony doped (.035 ohm-cm) silicon and lightly doped p-type silicon. A model is presented to quantitatively explain the observed suppression of defect formation in heavily doped n-type wafers.

  6. Significant enhancement in the photocatalytic activity of N, W co-doped TiO2 nanomaterials for promising environmental applications

    International Nuclear Information System (INIS)

    Thind, Sapanbir S; Wu Guosheng; Tian Min; Chen Aicheng

    2012-01-01

    In this work, a mesoporous N, W co-doped TiO 2 photocatalyst was synthesized via a one-step solution combustion method, which utilized urea as the nitrogen source and sodium tungstate as the tungsten source. The photocatalytic activity of the N, W co-doped TiO 2 photocatalyst was significantly enhanced by a facile UV pretreatment approach and was evaluated by measuring the rate of photodegradation of Rhodamine B under both UV and visible (λ > 420) light. Following the UV pretreatment, the UV photocatalytic activity of the N, W co-doped TiO 2 was doubled. In terms of visible light activity, the UV pretreatment resulted in an extraordinary >12 fold improvement. In order to gain insight into this substantial enhancement, the N, W co-doped TiO 2 photocatalysts were studied using x-ray diffraction, transmission electron microscopy, N 2 physisorption, UV–vis absorbance spectroscopy and x-ray photoelectron spectroscopy prior to and following the UV pretreatment. Our experimental results have revealed that this significant augmentation of photocatalytic activity may be attributed to several synergetic factors, including increase of the specific surface area, reduction of the band gap energy and the removal of carbon impurities. (paper)

  7. Surface photovoltage in heavily doped GaN:Si,Zn

    Science.gov (United States)

    McNamara, J. D.; Behrends, A.; Mohajerani, M. S.; Bakin, A.; Waag, A.; Baski, A. A.; Reshchikov, M. A.

    2014-02-01

    In n-type GaN, an upward band bending of about 1 eV is caused by negative charge at the surface. UV light reduces the band bending by creating a surface photovoltage (SPV), which can be measured by a Kelvin probe. Previously, we reported a fast SPV signal of about 0.6 eV in undoped and moderately doped GaN. In this work, we have studied degenerate GaN co-doped with Zn and Si, with a Si concentration of about 1019 cm-3 and a Zn concentration of 6×1017 cm-3. At room temperature, a fast component of about 0.6 eV was observed. However, after preheating the sample at 600 K for one hour and subsequently cooling the sample to 300 K (all steps performed in vacuum), the fast component disappeared. Instead, a very slow (minutes) and logarithmic in time rise of the SPV was observed with UV illumination. The total change in SPV was about 0.4 eV. This slow SPV transient can be reversibly converted into the "normal" fast (subsecond) rise by letting air or dry oxygen in at room temperature. Possible explanations of the observed unusual SPV transients are discussed.

  8. Optically stimulated luminescence (OSL) from Ag-doped Li2B4O7 crystals

    International Nuclear Information System (INIS)

    Kananen, B.E.; Maniego, E.S.; Golden, E.M.; Giles, N.C.; McClory, J.W.; Adamiv, V.T.; Burak, Ya.V.; Halliburton, L.E.

    2016-01-01

    Optically stimulated luminescence (CW-OSL) is observed from Ag-doped lithium tetraborate (Li 2 B 4 O 7 ) crystals. Photoluminescence, optical absorption, and electron paramagnetic resonance (EPR) are used to identify the defects participating in the OSL process. As-grown crystals have Ag + ions substituting for Li + ions. They also have Ag + ions occupying interstitial sites. During a room-temperature exposure to ionizing radiation, holes are trapped at the Ag + ions that replace Li + ions and electrons are trapped at the interstitial Ag + ions, i.e., the radiation forms Ag 2+ (4d 9 ) ions and Ag 0 (4d 10 5s 1 ) atoms. These Ag 2+ and Ag 0 centers have characteristic EPR spectra. The Ag 0 centers also have a broad optical absorption band peaking near 370 nm. An OSL response is observed when the stimulation wavelength overlaps this absorption band. Specifically, stimulation with 400 nm light produces an intense OSL response when emission is monitored near 270 nm. Electrons optically released from the Ag 0 centers recombine with holes trapped at Ag 2+ ions to produce the ultraviolet emission. The OSL response is progressively smaller as the stimulation light is moved to longer wavelengths (i.e., away from the 370 nm peak of the absorption band of the Ag 0 electron traps). Oxygen vacancies are also present in the Ag-doped Li 2 B 4 O 7 crystals, and their role in the OSL process as a secondary relatively short-lived electron trap is described.

  9. Synthesis of porous carbon-doped g-C_3N_4 nanosheets with enhanced visible-light photocatalytic activity

    International Nuclear Information System (INIS)

    Bao, Nan; Hu, Xinde; Zhang, Qingzhe; Miao, Xinhan; Jie, Xiuyan; Zhou, Shuai

    2017-01-01

    Highlights: • NSs-APAM photocatalysts were synthesized by a green and handy route. • APAM was used as the intercalator and carbon source in the preparation. • The combination of photo-induced charge carriers was greatly restrained. • Significantly enhanced visible-light photocatalytic activity was witnessed. • The NSs-APAM also showed a good recycling stability. - Abstract: The porous carbon-doped g-C_3N_4 nanosheets photocatalysts (NSs-APAM) were synthesized using anionic polyacrylamide (APAM) as the intercalator and carbon source via the thermal treatment method. The as-prepared samples were characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM), Atomic force microscopy (AFM), Fourier transform infrared spectroscopy (FT-IR), nitrogen adsorption, X-ray photoelectron spectroscopy (XPS), UV–vis diffuse reflectance absorption spectra (UV-DRS) and photoluminescence spectroscopy (PL). The results indicate that the APAM can effectively induce the formation of high-quality nanosheets (NSs) with narrowed bandgap. The specific surface area of NSs-APAM is 118.6 m"2/g, which is 5-fold larger than bulk g-C_3N_4. The carbon doping could narrow the bandgap, from 2.75 eV of g-C_3N_4 NSs without carbon doping (NSs-Water) to 2.41 eV of NSs-APAM. The two-dimensional NSs structure facilitates the charge separation by shortening the diffusion distance to the surface of photocatalysts. The synergic effects of the carbon doping and unique structural properties contributed to the superior photocatalytic activity of NSs-APAM with 95% degradation rate towards X–3 B after 30 min visible-light irradiation.

  10. Numerical analysis of band tails in nanowires and their effects on the performance of tunneling field-effect transistors

    Science.gov (United States)

    Tanaka, Takahisa; Uchida, Ken

    2018-06-01

    Band tails in heavily doped semiconductors are one of the important parameters that determine transfer characteristics of tunneling field-effect transistors. In this study, doping concentration and doing profile dependences of band tails in heavily doped Si nanowires were analyzed by a nonequilibrium Green function method. From the calculated band tails, transfer characteristics of nanowire tunnel field-effect transistors were numerically analyzed by Wentzel–Kramer–Brillouin approximation with exponential barriers. The calculated transfer characteristics demonstrate that the band tails induced by dopants degrade the subthreshold slopes of Si nanowires from 5 to 56 mV/dec in the worst case. On the other hand, surface doping leads to a high drain current while maintaining a small subthreshold slope.

  11. Order parameters in lanthanum gallate lightly doped with manganese and paramagnetic resonance

    Science.gov (United States)

    Vazhenin, V. A.; Potapov, A. P.; Artyomov, M. Yu.; Guseva, V. B.

    2010-09-01

    The Cr3+ centers have been revealed, transitions at room temperature have been identified, and spin Hamiltonian parameters have been determined for the Cr3+ and Fe3+ triclinic centers in lanthanum gallate lightly doped with manganese. The principal axes of the fourth-rank fine-structure tensor for the Fe3+ triclinic centers have been established and used to determine the order parameters, i.e., the angles of rotation of oxygen octahedra of lanthanum gallate with respect to the perovskite structure. The order parameter in the rhombohedral phase has been estimated.

  12. Bromine-doped DWNTs: A Molecular Faraday Cage

    Science.gov (United States)

    Chen, Gugang; Margine, Roxana; Gupta, Rajeev; Crespi, Vincent; Eklund, Peter; Sumanasekera, Gamini; Bandow, Shunji; Iijima, S.

    2003-03-01

    Raman scattering is used to probe the charge transfer distribution in Bromine-doped double-walled carbon nanotubes (DWNT). Using 1064 nm and 514.5 nm laser excitation we are able to study the charge-transfer sensitive phonons in the inner ( (5,5)) and outer ( (10,10)) tubes of the double-walled pair. The experimental results are compared to our tight binding band structure calculations that include a self-consistent electrostatic term sensitive to the average net charge density on each tube. Upon doping, the nanotube tangential and radial Raman bands from the outer (primary) tubes were observed to shift dramatically to higher frequencies, consistent with a C-C bond contraction driven by the acceptor-doping. The peak intensities of these bands significantly decreased with increasing doping exposure, and they eventually vanished, consistent with a deep depression in the Fermi energy that extinguishes the resonant Raman effect. Interestingly, at the same time, we observed little or no change for the tangential and radial Raman features identified with the inner (secondary) tubes during the bromine doping. Our electronic structure calculations show that the charge distribution between the outer and inner tubes depends on doping level and also, to some extent, on specific tube chirality combinations. In general, in agreement with experiment, the calculations find a very small net charge on the inner tube, consistent with a "Molecular Faraday Effect", e.g., a DWNT of (10, 10)/ (5, 5) configuration that exhibits 0.5 holes/Å total charge transfer, has only 0.04 holes/Å on the inner (secondary) tube.

  13. A novel fabrication methodology for sulfur-doped ZnO nanorods as an active photoanode for improved water oxidation in visible-light regime

    Science.gov (United States)

    Khan, A.; Ahmed, M. I.; Adam, A.; Azad, A.-M.; Qamar, M.

    2017-02-01

    Incorporation of foreign moiety in the lattice of semiconductors significantly alters their optoelectronic behavior and opens a plethora of new applications. In this paper, we report the synthesis of sulfur-doped zinc oxide (S-doped ZnO) nanorods by reacting ZnO nanorods with diammonium sulfide in vapor phase. Microscopic investigation revealed that the morphological features, such as, the length (2-4 μm) and width (100-250 nm) of the original hexagonal ZnO nanorods remained intact post-sulfidation. X-ray photoelectron spectroscopy analysis of the sulfide sample confirmed the incorporation of sulfur into ZnO lattice. The optical measurements suggested the extension of absorption threshold into visible region upon sulfidation. Photoelectrochemical (PEC) activities of pure and S-doped ZnO nanorods were compared for water oxidation in visible light (λ > 420 nm), which showed several-fold increment in the performance of S-doped ZnO sample; the observed amelioration in the PEC activity was rationalized in terms of preferred visible light absorption and low resistance of sulfide sample, as evidenced by optical and electrochemical impedance spectroscopy.

  14. Multiwalled carbon nanotubes decorated with nitrogen, palladium co-doped TiO2 (MWCNT/N, Pd co-doped TiO2) for visible light photocatalytic degradation of Eosin Yellow in water

    Science.gov (United States)

    Kuvarega, Alex T.; Krause, Rui W. M.; Mamba, Bhekie B.

    2012-03-01

    Multiwalled carbon nanotube (MWCNT/N), Pd co-doped TiO2 nanocomposites were prepared by calcining the hydrolysis products of the reaction of titanium isopropoxide, Ti(OC3H7)4 containing multiwalled carbon nanotubes with aqueous ammonia. The prepared samples were characterised by Fourier transform infrared spectroscopy, Raman spectroscopy, thermogravimetric analysis, diffuse reflectance UV-Vis spectrophotometry (DRUV-Vis), XRD, scanning electron microscopy (SEM) and transmission electron microscopy (TEM). DRUV-Vis analysis confirmed the red shift in the absorption edge at lower MWCNT percentages. SEM and TEM images showed the complete coverage of the MWCNTs with clusters of anatase TiO2 at low MWCNT percentages. Higher MWCNT levels led to their aggregation and consequently poor coverage by N, Pd co-doped TiO2. The photocatalytic activities of the nanocomposites were monitored by photodegradation of Eosin Yellow under simulated solar and visible light irradiation (λ > 450 nm). Irradiation with simulated solar radiation gave higher dye-degradation rates compared to visible radiation. The optimum MWCNT weight percentage in the composites was found to be 0.5. High degradation-rate constants of 3.42 × 10-2 and 5.18 × 10-3 min-1 were realised for the 0.5% MWCNT/N, Pd co-doped TiO2 composite, using simulated solar light and visible light, respectively.

  15. Performance analysis of high efficiency InxGa1-xN/GaN intermediate band quantum dot solar cells

    Science.gov (United States)

    Chowdhury, Injamam Ul Islam; Sarker, Jith; Shifat, A. S. M. Zadid; Shuvro, Rezoan A.; Mitul, Abu Farzan

    2018-06-01

    In this subsistent fifth generation era, InxGa1-xN/GaN based materials have played an imperious role and become promising contestant in the modernistic fabrication technology because of some of their noteworthy attributes. On our way of illustrating the performance, the structure of InxGa1-xN/GaN quantum dot (QD) intermediate band solar cell (IBSC) is investigated by solving the Schrödinger equation in light of the Kronig-Penney model. In comparison with p-n homojunction and heterojunction solar cells, InxGa1-xN/GaN IBQD solar cell manifests larger power conversion efficiency (PCE). PCE strongly depends on position and width of the intermediate bands (IB). Position of IBs can be controlled by tuning the size of QDs and the Indium content of InxGa1-xN whereas, width of IB can be controlled by tuning the interdot distance. PCE can also be controlled by tuning the position of fermi energy bands as well as changing the doping concentration. In this work, maximum conversion efficiency is found approximately 63.2% for a certain QD size, interdot distance, Indium content and doping concentration.

  16. Defect induced photoluminescence in MoS2 quantum dots and effect of Eu3+/Tb3+ co-doping towards efficient white light emission

    Science.gov (United States)

    Haldar, Dhrubaa; Ghosh, Arnab; Bose, Saptasree; Mondal, Supriya; Ghorai, Uttam Kumar; Saha, Shyamal K.

    2018-05-01

    Intensive research has been carried out on optical properties of MoS2 quantum dots for versatile applications in photo catalytic, sensing and optoelectronic devices. However, white light generation from MoS2 quantum dots particularly using doping effect is relatively unexplored. Herein we report successful synthesis of Europium (Eu)/Terbium (Tb) co-doped MoS2 quantum dots to achieve white light for potential applications in optoelectronic devices. The dopant ions are introduced into the host lattice to retain the emission colors to cover the entire range of visible light of solar spectrum. Perfect white light (CIE = 0.31, 0.33) with high intensity (quantum yield = 28.29%) is achieved in these rare earth elements co-doped quantum dot system. A new peak is observed in the NIR region which is attributed to the defects present in MoS2 quantum dots. Temperature dependent study has been carried out to understand the origin of this new peak in the NIR region. It is seen that the 'S' defects in the QDs cause the appearance of this peak which shows a blue shift at higher temperature.

  17. Realizing luminescent downshifting in ZnO thin films by Ce doping with enhancement of photocatalytic activity

    Science.gov (United States)

    Narayanan, Nripasree; Deepak, N. K.

    2018-04-01

    ZnO thin films doped with Ce at different concentration were deposited on glass substrates by spray pyrolysis technique. XRD analysis revealed the phase purity and polycrystalline nature of the films with hexagonal wurtzite geometry and the composition analysis confirmed the incorporation of Ce in the ZnO lattice in the case of doped films. Crystalline quality and optical transmittance diminished while electrical conductivity enhanced with Ce doping. Ce doping resulted in a red-shift of optical energy gap due to the downshift of the conduction band minimum after merging with Ce related impurity bands formed below the conduction band in the forbidden gap. In the room temperature photoluminescence spectra, UV emission intensity of the doped films decreased while the intensity of the visible emission band increased drastically implying the degradation in crystallinity as well as the incorporation of defect levels capable of luminescence downshifting. Ce doping showed improvement in photocatalytic efficiency by effectively trapping the free carriers and then transferring for dye degradation. Thus Ce doped ZnO thin films are capable of acting as luminescent downshifters as well as efficient photocatalysts.

  18. Characterization and Comparison of Photocatalytic Activity Silver Ion doped on TiO2(TiO2/Ag+) and Silver Ion doped on Black TiO2(Black TiO2/Ag+)

    Science.gov (United States)

    Kim, Jin Yi; Sim, Ho Hyung; Song, Sinae; Noh, Yeoung Ah; Lee, Hong Woon; Taik Kim, Hee

    2018-03-01

    Titanium dioxide (TiO2) is one of the representative ceramic materials containing photocatalyst, optic and antibacterial activity. The hydroxyl radical in TiO2 applies to the intensive oxidizing agent, hence TiO2 is suitable to use photocatalytic materials. Black TiO2was prepared through reduction of amorphous TiO2 conducting under H2 which leads to color changes. Its black color is proven that absorbs 100% light across the whole-visible light, drawing enhancement of photocatalytic property. In this study, we aimed to compare the photocatalytic activity of silver ion doped on TiO2(TiO2/Ag+) and silver ion doped on black TiO2(black TiO2/Ag+) under visible light range. TiO2/Ag+ was fabricated following steps. 1) TiO2 was synthesized by a sol-gel method from Titanium tetraisopropoxide (TTIP). 2) Then AgNO3 was added during an aging process step for silver ion doping on the surface of TiO2. Moreover, Black TiO2/Ag+ was obtained same as TiO2/Ag+ except for calcination under H2. The samples were characterized X-ray diffraction (XRD), UV-visible reflectance (UV-vis DRS), and Methylene Blue degradation test. XRD analysis confirmed morphology of TiO2. The band gap of black TiO2/Ag+ was confirmed (2.6 eV) through UV-vis DRS, which was lower than TiO2/Ag+ (2.9 eV). The photocatalytic effect was conducted by methylene blue degradation test. It demonstrated that black TiO2/Ag+ had a photocatalytic effect under UV light also visible light.

  19. Slowdown of group velocity of light in dual-frequency laser-pumped cascade structure of Er3+-doped optical fiber at room temperature

    Science.gov (United States)

    Qiu, Wei; Yang, Yujing; Gao, Yuan; Liu, Jianjun; Lv, Pin; Jiang, Qiuli

    2018-04-01

    Slow light is demonstrated in the cascade structure of an erbium-doped fiber with two forward propagation pumps. The results of the numerical simulation of the time delay and the optimum modulation frequency complement each other. The time delay and the optimum modulation frequency depend on the pump ratio G (G  =  {{P}1480}:{{P}980} ). The discussion results of this paper show that a larger time delay of slow light propagation can be obtained in the cascade structure of Er3+-doped optical fibers with dual-frequency laser pumping. Compared to previous research methods, the dual-frequency laser-pumped cascade structure of an Er3+-doped optical fiber is more controllable. Based on our discussion the pump ratio G should be selected in order to obtain a more appropriate time delay and the slowdown of group velocity.

  20. Formation of temperature fields in doped anisotropic crystals under spatially inhomogeneous light beams passing through them

    Energy Technology Data Exchange (ETDEWEB)

    Zaitseva, E. V.; Markelov, A. S.; Trushin, V. N., E-mail: trushin@phys.unn.ru; Chuprunov, E. V. [Nizhni Novgorod State University (Russian Federation)

    2013-12-15

    The features of formation of thermal fields in potassium dihydrophosphate crystal doped with potassium permanganate under a 532-nm laser beam passing through it have been investigated. Data on the influence of birefringence on the temperature distribution in an anisotropic crystal whose surface is illuminated by a spatially modulated light beam are presented.

  1. Synergistic effect on the photocatalytic activity of N-doped TiO{sub 2} nanorods synthesised by novel route with exposed (110) facet

    Energy Technology Data Exchange (ETDEWEB)

    Bakar, Shahzad Abu, E-mail: shazad_158@yahoo.com [Department of Chemistry, Federal University of São Carlos, Rod. Washington Luiz, km 235, CEP: 13565-905 São Carlos, SP (Brazil); Embrapa CNPDIA, Rua XV de Novembro, 1452, 13560-970, São Carlos, SP (Brazil); Byzynski, Gabriela; Ribeiro, Caue [Embrapa CNPDIA, Rua XV de Novembro, 1452, 13560-970, São Carlos, SP (Brazil)

    2016-05-05

    This paper describes a facile route for the preparation of visible-light-active N-doped TiO{sub 2} nanorods arrays at low temperature by a template-free oxidant peroxide method (OPM) and crystallized under hydrothermal treatment. The samples were characterized for structural, morphological and optical properties by XPS, FE-SEM, HRTEM, XRD, Raman and UV–vis spectroscopy. XPS analysis revealed that N dopant atoms were mainly added at the interstitial sites into TiO{sub 2} lattice structure and few N atoms were present as substitutional sites of nitrogen atoms and/or at molecularly chemisorbed γ-N{sub 2} molecules. FE-SEM and HR-TEM analyses show that doping does not influenced the cylindrical architecture of the nanorods. However, N doping causes an obvious red shift in the band edge which increases visible region absorption. The photocatalytic activity of pristine and N-doped TiO{sub 2} photocatalysts was tested for the degradation of methyl orange (MO) under UV and visible light irradiation. The N-doped TiO{sub 2} photocatalysts showed an efficient photocatalytic activity for methyl orange degradation under UV and visible-light irradiation as compared to pristine TiO{sub 2}. Multiple cycles for the MO photodegradation were performed without a decrease in the photocatalytic activity. PEC studies showed that photocurrent densities of 8.2 μA cm{sup −2} and 7.0 μA cm{sup −2} were obtained under UV and visible-light illumination at a potential of 0.8 V. - Highlights: • The pristine and N-doped TiO{sub 2} nanorods were prepared and characterized for structural and optical properties. • As-prepared samples showed enhanced photocatalytic activity toward the photodegradation of MO dye. • Photo-electrochemical measurements were done to investigate N-doped TiO{sub 2} nanorods capability for water splitting.

  2. Fabrication of Ce/N co-doped TiO_2/diatomite granule catalyst and its improved visible-light-driven photoactivity

    International Nuclear Information System (INIS)

    Chen, Yan; Liu, Kuiren

    2017-01-01

    Highlights: • Ce/N co-doped TiO_2/diatomite granule (CNTD-G) was prepared via sol-gel method. • The optimal doping amount of Ce was determined. • The effects of impurity ions on photodegradation process were studied. • The intermediates generated during photodegradation process were deduced. • The mechanism of photodegradation process was proposed. - Abstract: Eliminating antibiotic remnants in aquatic environment has become one of the hottest topics among current research works. Thus, we prepared Ce, N co-doped TiO_2/diatomite granule (CNTD-G) catalyst to provide a new method. As one typical antibiotics, oxytetracycline (OTC) was selected as the target pollutant to be degradated under visible light irradiation. The carrier diatomite helped the spread of TiO_2 nanoparticles onto its surface, and inhibited their agglomeration. The synergy of Ce and N dopants highly improved the visible-light-driven photoactivity of TiO_2. The optimal doping amount and degradation conditions were determined. Besides, the effects of impurity ions were also investigated, including cations: Ca"2"+, Mg"2"+; or anions: NO_3"−, SO_4"2"− and PO_4"3"−. The intermediates generated during degradation process were studied, and the mechanism of the photodegradation process was proposed. CNTD-G could be easily collected from the reactor, and showed excellent recyclability.

  3. Mg doping induced high structural quality of sol–gel ZnO nanocrystals: Application in photocatalysis

    Energy Technology Data Exchange (ETDEWEB)

    Abed, Chayma; Bouzidi, Chaker [Laboratoire de Physico-chimie des Matériaux Minéraux et leurs Applications, Centre National de Recherches en Sciences des Matériaux, BP 95, Hammam-Lif 2050 (Tunisia); Elhouichet, Habib, E-mail: Habib.elhouichet@fst.rnu.tn [Laboratoire de Physico-chimie des Matériaux Minéraux et leurs Applications, Centre National de Recherches en Sciences des Matériaux, BP 95, Hammam-Lif 2050 (Tunisia); Département de Physique, Faculté des Sciences de Tunis, Université Tunis El Manar, Tunis 2092 (Tunisia); Gelloz, Bernard [Graduate School of Engineering, Nagoya University, 2-24-16 Furo-cho, Chikusa-ku, Nagoya, Aichi 464-8603 (Japan); Ferid, Mokhtar [Laboratoire de Physico-chimie des Matériaux Minéraux et leurs Applications, Centre National de Recherches en Sciences des Matériaux, BP 95, Hammam-Lif 2050 (Tunisia)

    2015-09-15

    Highlights: • ZnO nancrystals doped with Mg were prepared from sol–gel method. • Structural and optical properties of ZnO:Mg nanocrystals were investigated. • Good crystalline quality of ZnO nanocrystals was reported after Mg doping. • Good photocatalytic activity of Mg doped ZnO nanocrystals was demonstrated under sun light illumination. - Abstract: Undoped and Mg doped ZnO nanocrystals (NCs) ZnO:x%Mg (x = 1, 2, 3, and 5) were synthesized using sol–gel method. The structural and optical properties were investigated by X-ray diffraction (XRD), Raman spectroscopy, diffuse reflectivity, and photoluminescence (PL). XRD analysis demonstrates that all prepared samples present pure hexagonal wurtzite structure without any Mg related phases. The NCs size varies from 26.82 nm to 42.96 nm with Mg concentrations; it presents an optimal value for 2% of Mg. The Raman spectra are dominated by the E{sub 2high} mode. For highly Mg doping (5%), the occurrence of silent B{sub 1(low)} mode suggested that the Mg ions do substitute at Zn sites in the ZnO lattice The band gap energy was estimated from both Tauc and Urbach methods and found to be 3.39 eV for ZnO:2%Mg. The PL spectra exhibit two emission bands in the UV and visible range. Their evolution with Mg doping reveals the reduction of defect density in ZnO at low Mg doping by filling Zn vacancies. In addition, it was found that further Mg doping, above 2%, improves the photocatalytic activity of ZnO NCs for photodegradation of Rhodamine B (RhB) under sunlight irradiation. The efficient electron–hole separation is the main factor responsible for the enhancement of photocatalytic performance of Mg doped ZnO NCs. Through this work, we show that by varying the Mg contents in ZnO, this material can be a potential candidate for both optoelectronic and photocatalytic applications.

  4. Effect of carbazole-oxadiazole excited-state complexes on the efficiency of dye-doped light-emitting diodes

    Science.gov (United States)

    Jiang, Xuezhong; Register, Richard A.; Killeen, Kelly A.; Thompson, Mark E.; Pschenitzka, Florian; Hebner, Thomas R.; Sturm, James C.

    2002-05-01

    Interactions between hole-transporting carbazole groups and electron-transporting 1,3,4-oxadiazole groups were studied by photoluminescence and electroluminescence (EL) spectroscopy, in blends of poly(N-vinylcarbazole) with 2-tert-butylphenyl-5-biphenyl-1,3,4-oxadiazole (PVK:PBD) and in random copolymers with carbazole and oxadiazole groups attached as side chains. Different excited-state complexes form in the blends, which exhibit exciplexes, and in the copolymers, which manifest electroplexes, due to topological constraints on the position of carbazole and oxadiazole units in the polymer. Both types of complex red-shift the EL spectra of the matrices compared with pure PVK homopolymer, although the shift is significantly greater for the electroplex. The presence of these complexes has a profound effect on the external quantum efficiency of dye-doped organic light-emitting diodes employing the blends or copolymers as matrices, as it strongly affects the efficiency of Förster energy transfer from the matrix to the dye. Single-layer devices doped with either coumarin 47 (C47), coumarin 6 (C6), or nile red (NR) were compared. Among the three dye-doped PVK:PBD devices, C6 doping yields the highest efficiency, while NR doping produced the most efficient copolymer devices, consistent with the degree of overlap between the EL spectrum of the matrix material and the absorption spectrum of the dye.

  5. Influence of nitrogen-doping concentration on the electronic structure of CuAlO{sub 2} by first-principles studies

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Wei-wei, E-mail: zmliuwwliu@126.com; Chen, Hong-xia; Liu, Cheng-lin; Wang, Rong

    2017-02-05

    Effect of N doping concentration on the electronic structure of N-doped CuAlO{sub 2} was investigated by density functional theory based on generalized-gradient approximation plus orbital potential. Lattice parameters a and c both increase with increasing N-doping concentration. Formation energies increase with increasing N doping concentration and all N-doped CuAlO{sub 2} were structurally stable. The calculated band gaps for N-doped CuAlO{sub 2} narrowed compared to pure CuAlO{sub 2}, which was attributed to the stronger hybridization between Cu-3d and N-2p states and the downward shift of Cu-3p states in conduction bands. The higher the N-doping concentration is, the narrower the band gap. N-doped CuAlO{sub 2} shows a typical p-type semiconductor. The band structure changed from indirect to direct after N doping which will benefit the application of the CuAlO{sub 2} materials in optoelectronic and electronic devices. - Highlights: • Electronic structures of CuAlO{sub 2} with different N content were investigated. • The higher the N-doping concentration is, the narrower the band gap. • All the CuAlO{sub 2} with different N content were structurally stable. • The N-doped CuAlO{sub 2} shows a typical p-type semiconductor characteristic.

  6. First-principles studies of Ce and Eu doped inorganic scintillator gamma ray detectors

    Science.gov (United States)

    Canning, Andrew; Chaudhry, Anurag; Boutchko, Rostyslav; Derenzo, Stephen

    2011-03-01

    We have performed DFT based band structure calculations for new Ce and Eu doped wide band gap inorganic materials to determine their potential as candidates for gamma ray scintillator detectors. These calculations are based on determining the 4f ground state level of the Ce and Eu relative to the valence band of the host as well as the position of the Ce and Eu 5d excited state relative to the conduction band of the host. Host hole and electron traps as well as STEs (self trapped excitons) can also limit the transfer of energy from the host to the Ce or Eu site and therefore limit the light output. We also present calculations for host hole traps and STEs to compare the energies to the Ce and Eu excited states. The work was supported by the U.S. Department of Homeland Security and carried out at the Lawrence Berkeley National Laboratory under U.S. Department of Energy Contract No. DE-AC02- 05CH11231.

  7. Comparative study of (N, Fe) doped TiO{sub 2} photocatalysts

    Energy Technology Data Exchange (ETDEWEB)

    Larumbe, S., E-mail: silvia.larumbe@unavarra.es [Departamento Física, Universidad Pública de Navarra, Campus de Arrosadia, 31006 Pamplona (Spain); Monge, M. [Departamento de Química, Universidad de la Rioja, Centro de Investigación en Síntesis Química (CISQ), Complejo Científico Tecnológico, 26006 Logroño (Spain); Gómez-Polo, C. [Departamento Física, Universidad Pública de Navarra, Campus de Arrosadia, 31006 Pamplona (Spain)

    2015-02-01

    Highlights: • Fe, N doped TiO{sub 2} nanoparticles were synthesized by sol–gel. • The nitrogen content controlled the mean size of nanoparticles and afterwards the modification of cell parameters with respect the undoped sample. • Both doping elements induced the increase of the anatase-rutile transition temperature. • A red-shift is observed in the absorption spectra with the introduction of both elements. • An improvement of photocatalytic activity is observed with the introduction of nitrogen under UV and Visible light. However for higher concentrations a decrease in kinetic constants was observed as consequence of the oxygen vacancies acting as recombination centers. On the contrary, a deterioration of photocatalytic efficiency is found for the Fe doped samples. • A correlation between magnetic behavior and photocatalytic activity was found. - Abstract: The effect of N and Fe doping on the structural, optical, photocatalytic and magnetic properties of TiO{sub 2} nanoparticles is analyzed. Undoped, N and Fe doped TiO{sub 2} nanoparticles were synthesized by sol–gel method. Titanium tetraisopropoxide (TTIP) was used as the alkoxyde precursor and iron (III) nitrate and urea were the employed precursors to obtain Fe and N doped TiO{sub 2} nanoparticles, respectively. Differential Scanning Calorimetry (DSC) and Thermogravimetrical Analysis (TGA) enabled the analysis of the thermal decomposition process and the final calcination temperature. X-Ray Diffraction patterns of the calcined nanoparticles displayed a monophasic anatase structure in all the samples with mean crystallite diameter around 4–6 nm. The introduction of Fe or N induced a red-shift in the absorption spectra. Such a red-shift is characterized by a decrease in the band-gap energy and the occurrence of an absorption (Urbach) tail in the visible region. Finally, the photocatalytic efficiency was evaluated under UV and Visible light, obtaining an improvement of the kinetic constants in

  8. An anode with aluminum doped on zinc oxide thin films for organic light emitting devices

    International Nuclear Information System (INIS)

    Xu Denghui; Deng Zhenbo; Xu Ying; Xiao Jing; Liang Chunjun; Pei Zhiliang; Sun Chao

    2005-01-01

    Doped zinc oxides are attractive alternative materials as transparent conducting electrode because they are nontoxic and inexpensive compared with indium tin oxide (ITO). Transparent conducting aluminum-doped zinc oxide (AZO) thin films have been deposited on glass substrates by DC reactive magnetron sputtering method. Films were deposited at a substrate temperature of 150-bar o C in 0.03 Pa of oxygen pressure. The electrical and optical properties of the film with the Al-doping amount of 2 wt% in the target were investigated. For the 300-nm thick AZO film deposited using a ZnO target with an Al content of 2 wt%, the lowest electrical resistivity was 4x10 -4 Ωcm and the average transmission in the visible range 400-700 nm was more than 90%. The AZO film was used as an anode contact to fabricate organic light-emitting diodes. The device performance was measured and the current efficiency of 2.9 cd/A was measured at a current density of 100 mA/cm 2

  9. Features of the band structure and conduction mechanisms of n-HfNiSn heavily doped with Y

    Energy Technology Data Exchange (ETDEWEB)

    Romaka, V. A., E-mail: vromaka@polynet.lviv.ua [National Academy of Sciences of Ukraine, Pidstryhach Institute for Applied Problems of Mechanics and Mathematics (Ukraine); Rogl, P. [Universitet Wien, Institut für Physikalische Chemie (Austria); Romaka, V. V. [National University “Lvivska Politechnika” (Ukraine); Kaczorowski, D. [Polish Academy of Sciences, Institute of Low Temperature and Structure Research (Poland); Krayovskyy, V. Ya. [National University “Lvivska Politechnika” (Ukraine); Stadnyk, Yu. V.; Horyn, A. M. [Ivan Franko Lviv National University (Ukraine)

    2017-02-15

    The crystalline and electronic structures, energy, kinetic, and magnetic characteristics of n-HfNiSn semiconductor heavily doped with Y acceptor impurity are studied in the ranges: T = 80–400 K, N{sub A}{sup Y} ≈ 1.9 × 10{sup 20}–5.7 × 10{sup 21} cm{sup –3} (x = 0.01–0.30), and H ≤ 10 kG. The nature of the mechanism of structural defect generation is determined, which leads to a change in the band gap and the degree of semiconductor compensation, the essence of which is the simultaneous reduction and elimination of structural donor-type defects as a result of the displacement of ~1% of Ni atoms from the Hf (4a) site, and the generation of structural acceptor-type defects by substituting Hf atoms with Y atoms at the 4a site. The results of calculations of the electronic structure of Hf{sub 1–x}Y{sub x}NiSn are in agreement with the experimental data. The discussion is performed within the Shklovskii–Efros model of a heavily doped and compensated semiconductor.

  10. Effect of bismuth doping on the ZnO nanocomposite material and study of its photocatalytic activity under UV-light

    International Nuclear Information System (INIS)

    Chandraboss, V.L.; Natanapatham, L.; Karthikeyan, B.; Kamalakkannan, J.; Prabha, S.; Senthilvelan, S.

    2013-01-01

    Graphical abstract: The hetero-junctions that are formed between the ZnO and the Bi provide an internal electric field that facilitates separation of the electron-hole pairs and induces faster carrier migration. Thus they often enhanced photocatalytic reaction. - Highlights: • Bi-doped ZnO nanocomposite material was prepared by precipitation method. • Characterized by XRD, HR-SEM with EDX, UV–visible DRS and FT-RAMAN analysis. • Bi-doped ZnO nanocomposite material was used to photodegradation of Congo red. • Mechanism and photocatalytic effect of nanocomposite material have been discussed. - Abstract: Bismuth (Bi)-doped ZnO nanocomposite material was prepared by precipitation method with doping precursors of bismuth nitrate pentahydrate and oxalic acid, characterized by X-ray diffraction (XRD), High Resolution-Scanning Electron Microscopy (HR-SEM) with Energy Dispersive X-ray (EDX) analysis, UV–visible Diffuse Reflectance Spectroscopy (UV–visible DRS) and Fourier Transform-Raman (FT-RAMAN) analysis. The enhanced photocatalytic activity of the Bi-doped ZnO is demonstrated through photodegradation of Congo red under UV-light irradiation. The mechanism of photocatalytic effect of Bi-doped ZnO nanocomposite material has been discussed

  11. Red light emission from europium doped zinc sodium bismuth borate glasses

    Science.gov (United States)

    Hegde, Vinod; Viswanath, C. S. Dwaraka; Upadhyaya, Vyasa; Mahato, K. K.; Kamath, Sudha D.

    2017-12-01

    Zinc sodium bismuth borate (ZNBB) glasses doped with different concentrations of europium were prepared by conventional melt quenching method and characterized through the measurements of density, refractive index, X-ray diffraction (XRD), Fourier Transform Infrared (FTIR) spectra, optical absorption, luminescence and radiative lifetimes. FTIR spectra showed seven characteristic peaks of bismuth and borate functional groups in the range of 400-1600 cm-1. The optical band gap and bonding parameters have been calculated from absorption spectra. Photoluminescence spectra recorded in the visible region with 394 nm excitation are used to calculate the Judd-Ofelt (JO) intensity parameters (Ω2 and Ω4). The JO intensity parameters have been used to calculate the radiative parameters such as branching ratio (β), stimulated emission cross-section (σse), transition probability (A) for the fluorescent level of 5D0→7F2. Decay rates through single exponential are used to calculate the lifetime (τm) of the meta-stable state 5D0 of (Eu3+ ion) these glasses. The radiative parameters measured for all these glasses show 0.7 mol% europium doped zinc sodium bismuth borate glass 5D0→7F2 transition has the potential for red laser applications. The quality of the colour emitted by the present glasses are estimated quantitatively by CIE chromaticity coordinates, which confirms the suitability of these glasses as a red emitting material for field emission technologies and LEDs.

  12. p-type doping by platinum diffusion in low phosphorus doped silicon

    Science.gov (United States)

    Ventura, L.; Pichaud, B.; Vervisch, W.; Lanois, F.

    2003-07-01

    In this work we show that the cooling rate following a platinum diffusion strongly influences the electrical conductivity in weakly phosphorus doped silicon. Diffusions were performed at the temperature of 910 °C in the range of 8 32 hours in 0.6, 30, and 60 Ωrm cm phosphorus doped silicon samples. Spreading resistance profile analyses clearly show an n-type to p-type conversion under the surface when samples are cooled slowly. On the other hand, a compensation of the phosphorus donors can only be observed when samples are quenched. One Pt related acceptor deep level at 0.43 eV from the valence band is assumed to be at the origin of the type conversion mechanism. Its concentration increases by lowering the applied cooling rate. A complex formation with fast species such as interstitial Pt atoms or intrinsic point defects is expected. In 0.6 Ωrm cm phosphorus doped silicon, no acceptor deep level in the lower band gap is detected by DLTS measurement. This removes the opportunity of a pairing between phosphorus and platinum and suggests the possibility of a Fermi level controlled complex formation.

  13. Graphene oxide quantum dot-sensitized porous titanium dioxide microsphere: Visible-light-driven photocatalyst based on energy band engineering.

    Science.gov (United States)

    Zhang, Yu; Qi, Fuyuan; Li, Ying; Zhou, Xin; Sun, Hongfeng; Zhang, Wei; Liu, Daliang; Song, Xi-Ming

    2017-07-15

    We report a novel graphene oxide quantum dot (GOQD)-sensitized porous TiO 2 microsphere for efficient photoelectric conversion. Electro-chemical analysis along with the Mott-Schottky equation reveals conductivity type and energy band structure of the two semiconductors. Based on their energy band structures, visible light-induced electrons can transfer from the p-type GOQD to the n-type TiO 2 . Enhanced photocurrent and photocatalytic activity in visible light further confirm the enhanced separation of electrons and holes in the nanocomposite. Copyright © 2017 Elsevier Inc. All rights reserved.

  14. In situ Sn2+-incorporation synthesis of titanate nanotubes for photocatalytic dye degradation under visible light illumination

    International Nuclear Information System (INIS)

    Tsai, Chien-Cheng; Chen, Liang-Che; Yeh, Te-Fu; Teng, Hsisheng

    2013-01-01

    Highlights: ► Sn 2+ ions sensitize titanate nanotubes for photocatalysis under visible-light illumination. ► The Sn 5s orbital replaces the O 2p orbital as the top level of the valence band of titanates. ► The presence of Sn 2+ lifts the valence band of titanate nanotubes by approximately 0.9 eV. ► The doped Sn 2+ sites are active in donating photo-induced charges to dye degradation. - Abstract: Sn 2+ -incorporated titanate nanotubes, prepared by washing a layered sodium titanate with a SnCl 2 solution for tube formation, exhibit noticeable photocatalytic activity under visible light irradiation. This in situ synthesis results in a Sn/Ti ratio of approximately 0.6. Because of the introduction of Sn 2+ ions, the Sn 5s orbital replaces the O 2p orbital as the top level of the valence band of titanate nanotubes. Optical absorption analysis shows that Sn doping reduces the bandgap of titanate nanotubes from 3.5 to 2.6 eV. Oxidation of the Sn 2+ -incorporated titanate nanotubes leads to oxidation of Sn 2+ to Sn 4+ , hence, widening the bandgap. Under visible light irradiation, Sn 2+ -incorporated titanate nanotubes effectively degrade methylene blue in an aqueous solution, whereas the bare titanate nanotubes exhibit substantially lower photocatalytic activity. Photoluminescence analysis demonstrates that the induced charges from excitation of the Sn 2+ ions tend to be relaxed through chemical interactions, rather than irradiative recombination.

  15. Electronic properties of BN-doped bilayer graphene and graphyne in the presence of electric field

    Science.gov (United States)

    Majidi, R.; Karami, A. R.

    2013-11-01

    In the present paper, we have used density functional theory to study electronic properties of bilayer graphene and graphyne doped with B and N impurities in the presence of electric field. It has been demonstrated that a band gap is opened in the band structures of the bilayer graphene and graphyne by B and N doping. We have also investigated influence of electric field on the electronic properties of BN-doped bilayer graphene and graphyne. It is found that the band gaps induced by B and N impurities are increased by applying electric field. Our results reveal that doping with B and N, and applying electric field are an effective method to open and control a band gap which is useful to design carbon-based next-generation electronic devices.

  16. Study on mechanism of photocatalytic performance of La-doped TiO2/Ti photoelectrodes by theoretical and experimental methods

    International Nuclear Information System (INIS)

    Xin Yanjun; Liu Huiling

    2011-01-01

    TiO 2 photoelectrodes with various nanostructures have been successfully prepared by the anodization method. The morphology, microstructure and optical properties of as-prepared photoelectrodes were studied by scanning electron microscopy (SEM), X-ray diffraction (XRD), ultraviolet/visible light diffuse reflectance spectra (UV/vis/DRS), surface photovoltage spectroscopy (SPS) and photocurrent. The electronic structure and optical properties of La doped/undoped TiO 2 photoelectrodes with different crystal structures were calculated by the density function theory. The photocatalytic and photoelectrocatalytic activities of as-prepared photoelectrodes were evaluated. The results showed that the anodization potentials played a crucial role in the surface morphology and microstructure. Both results of theoretical calculations and experimental tests demonstrated that La-doped photoelectrodes were more sensitive to light than undoped one. The difference of photoelectrodes performance was ascribed to the crystal configuration, impurity energy levels and long-range orientation moving of photogenerated carriers. - Graphical abstract: Photophysical chemistry processes in as-prepared TiO 2 photoelectrodes. Overall scheme of TiO 2 photoelectrodes: (A) movement of photoelectrons and holes without bias potentials; (B) movement of photoelectrons and holes at applied bias potentials; (a) and (b) were the transmission of photogenerated electrons and holes of local enlargement of (A) (black open circle): (a) photoelectrons movement in P-TiO 2 photoelectrodes and La-TiO 2 photoelectrodes, the red dot line denotes the top of valence band (VB) and the bottom of conduction band (CB) of pure photoelectrodes; (b) photoelectrons movement in P-160 and La-160 TiO 2 photoelectrodes (mixed crystal phase). The number refers to as follows: (1) transmission process of photoelectrons and holes; (2) recombination process of photoelectrons and holes. Arrows represent the moving direction of

  17. High sensitivity ethanol gas sensor based on Sn - doped ZnO under visible light irradiation at low temperature

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Peishuo; Pan, Guofeng; Zhang, Bingqiang; Zhen, Jiali; Sun, Yicai, E-mail: pgf@hebut.edu.cn [Institute of Microelectronic, Hebei University of Technology, Tianjin (China)

    2014-07-15

    Pure ZnO and 5at%, 7at%, 9at% Sn - doped ZnO materials are prepared by the chemical co - precipitation method. They were annealed by furnace at temperature range of 300 - 700ºC in air for 1h. The ZnO materials are characterized by X - ray diffraction (XRD) and scanning electron microscopy (SEM). The results show that the Sn - doped ZnO materials appear rough porous structures. The maximum sensitivity can be achieved by doping the amount of 7 at%. It has much better sensing performance towards ethanol vapor under visible light irradiation. The response and recovery time are ~1s and ~5s, respectively. The mechanism for the improvement in the sensing properties can be explained with the surface adsorption theory and the photoactivation theory. (author)

  18. Deep-level optical spectroscopy investigation of N-doped TiO2 films

    International Nuclear Information System (INIS)

    Nakano, Yoshitaka; Morikawa, Takeshi; Ohwaki, Takeshi; Taga, Yasunori

    2005-01-01

    N-doped TiO 2 films were deposited on n + -GaN/Al 2 O 3 substrates by reactive magnetron sputtering and subsequently crystallized by annealing at 550 deg. C in flowing N 2 gas. The N-doping concentration was ∼8.8%, as determined from x-ray photoelectron spectroscopy measurements. Deep-level optical spectroscopy measurements revealed two characteristic deep levels located at ∼1.18 and ∼2.48 eV below the conduction band. The 1.18 eV level is probably attributable to the O vacancy state and can be active as an efficient generation-recombination center. Additionally, the 2.48 eV band is newly introduced by the N doping and contributes to band-gap narrowing by mixing with the O 2p valence band

  19. Lead Monoxide: Two-Dimensional Ferromagnetic Semiconductor Induced by Hole-Doping

    KAUST Repository

    Wang, Yao

    2017-04-12

    We employ first-principles calculations to demonstrate ferromagnetic ground states for single- and multi-layer lead monoxide (PbO) under hole-doping, originating from a van Hove singularity at the valence band edge. Both the sample thickness and applied strain are found to have huge effects on the electronic and magnetic properties. Multi-layer PbO is an indirect band gap semiconductor, while a direct band gap is realized in the single-layer limit. In hole-doped single-layer PbO, biaxial tensile strain can enhance the stability of the ferromagnetic state.

  20. Lead Monoxide: Two-Dimensional Ferromagnetic Semiconductor Induced by Hole-Doping

    KAUST Repository

    Wang, Yao; Zhang, Qingyun; Shen, Qian; Cheng, Yingchun; Schwingenschlö gl, Udo; Huang, Wei

    2017-01-01

    We employ first-principles calculations to demonstrate ferromagnetic ground states for single- and multi-layer lead monoxide (PbO) under hole-doping, originating from a van Hove singularity at the valence band edge. Both the sample thickness and applied strain are found to have huge effects on the electronic and magnetic properties. Multi-layer PbO is an indirect band gap semiconductor, while a direct band gap is realized in the single-layer limit. In hole-doped single-layer PbO, biaxial tensile strain can enhance the stability of the ferromagnetic state.