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Sample records for lead thin films

  1. Electromagnetic properties of thin film lead superconductors

    International Nuclear Information System (INIS)

    Moriyama, K.

    1978-01-01

    The dependence of critical film magnetic field H/sub cf/ on temperature, thickness, and surface texture of lead superconducting films was investigated, as well as the relationship between the applied magnetic field and the applied current at the critical field. Temperature and thickness dependence data were consistent with the predictions of London, of Ginzburg, and of Bardeen, Cooper, and Schreiffer. The values of H/sub cf/ of lead films deposited on a rough surface were consistently lower than for those on a smooth surface and so were not in agreement with any currently accepted theory. The degree of lowering of H/sub cf/ by a rough surface was greater in thin films than in thick films. The expected dependence of penetration depth lambda on thickness d was not observed, and the range of lambda was somewhat greater than expected. The range of coherence length was greater than predicted. The prediction for temperature dependence of critical current by Glover and Coffey was found to involve some oversimplification, and a suggested correction is supported by the data. For applied magnetic fields perpendicular to the applied current and parallel to the film surface, the relationship between the critical values of the magnetic field and the current was as predicted for lead films by Alphonse and Bergstein

  2. Exciton Recombination in Formamidinium Lead Triiodide : Nanocrystals versus Thin Films

    NARCIS (Netherlands)

    Fang, Hong-Hua; Protesescu, Loredana; Balazs, Daniel M.; Adjokatse, Sampson; Kovalenko, Maksym V.; Loi, Maria Antonietta

    2017-01-01

    The optical properties of the newly developed near-infrared emitting formamidinium lead triiodide (FAPbI(3)) nanocrystals (NCs) and their polycrystalline thin film counterpart are comparatively investigated by means of steady-state and time-resolved photoluminescence. The excitonic emission is

  3. Crystal structure of red lead titanate thin films

    Energy Technology Data Exchange (ETDEWEB)

    Bursill, L.A.; Peng, J.L.; Jiang, B. [Melbourne Univ., Parkville, VIC (Australia). School of Physics; Li, X. [Jilin Univ., Changchun, JL (China). Dept of Chemistry

    1998-09-01

    Orange-red lead titanate thin films are examined by high-resolution transmission electron microscopy and diffraction. It is remarkable that the structure is based on that of tetragonal-tungsten-bronze (TTB) rather than perovskite-type. The chemical basis for this result is examined. It is deduced that the TTB structure is stabilized by inclusion of hydroxyl ions during synthesis by a sol-gel route involving hydrolysis of n-Butyl titanate 7 refs., 1 tab., 4 figs.

  4. Crystal structure of red lead titanate thin films

    International Nuclear Information System (INIS)

    Bursill, L.A.; Peng, J.L.; Jiang, B.; Li, X.

    1998-01-01

    Orange-red lead titanate thin films are examined by high-resolution transmission electron microscopy and diffraction. It is remarkable that the structure is based on that of tetragonal-tungsten-bronze (TTB) rather than perovskite-type. The chemical basis for this result is examined. It is deduced that the TTB structure is stabilized by inclusion of hydroxyl ions during synthesis by a sol-gel route involving hydrolysis of n-Butyl titanate

  5. Modified lead titanate thin films for pyroelectric infrared detectors on gold electrodes

    Science.gov (United States)

    Ahmed, Moinuddin; Butler, Donald P.

    2015-07-01

    Pyroelectric infrared detectors provide the advantage of both a wide spectral response and dynamic range, which also has enabled systems to be developed with reduced size, weight and power consumption. This paper demonstrates the deposition of lead zirconium titanate (PZT) and lead calcium titanate (PCT) thin films for uncooled pyroelectric detectors with the utilization of gold electrodes. The modified lead titanate thin films were deposited by pulsed laser deposition on gold electrodes. The PZT and PCT thins films deposited and annealed at temperatures of 650 °C and 550 °C respectively demonstrated the best pyroelectric performance in this work. The thin films displayed a pyroelectric effect that increased with temperature. Poling of the thin films was carried out for a fixed time periods and fixed dc bias voltages at elevated temperature in order to increase the pyroelectric coefficient by establishing a spontaneous polarization of the thin films. Poling caused the pyroelectric current to increase one order of magnitude.

  6. P-type thin films transistors with solution-deposited lead sulfide films as semiconductor

    Energy Technology Data Exchange (ETDEWEB)

    Carrillo-Castillo, A.; Salas-Villasenor, A.; Mejia, I. [Department of Materials Science and Engineering, The University of Texas at Dallas. 800 West Campbell Rd, Richardson, TX 75083 (United States); Aguirre-Tostado, S. [Centro de Investigacion en Materiales Avanzados, S. C. Alianza Norte 202, Parque de Investigacion e Innovacion Tecnologica, Apodaca, Nuevo Leon, C.P. 666000 (Mexico); Gnade, B.E. [Department of Materials Science and Engineering, University of Texas at Dallas. 800 West Campbell Rd, Richardson, TX 75083 (United States); Quevedo-Lopez, M.A., E-mail: mxq071000@utdallas.edu [Department of Materials Science and Engineering, University of Texas at Dallas. 800 West Campbell Rd, Richardson, TX 75083 (United States)

    2012-01-31

    In this paper we demonstrate p-type thin film transistors fabricated with lead sulfide (PbS) as semiconductor deposited by chemical bath deposition methods. Crystallinity and morphology of the resulting PbS films were characterized using X-ray diffraction, atomic force microscopy and scanning electron microscopy. Devices were fabricated using photolithographic processes in a bottom gate configuration with Au as source and drain top contacts. Field effect mobility for as-fabricated devices was {approx} 0.09 cm{sup 2} V{sup -1} s{sup -1} whereas the mobility for devices annealed at 150 Degree-Sign C/h in forming gas increased up to {approx} 0.14 cm{sup 2} V{sup -1} s{sup -1}. Besides the thermal annealing, the entire fabrications process was maintained below 100 Degree-Sign C. The electrical performance of the PbS-thin film transistors was studied before and after the 150 Degree-Sign C anneal as well as a function of the PbS active layer thicknesses. - Highlights: Black-Right-Pointing-Pointer Thin film transistors with PbS as semiconductor deposited by chemical bath deposition. Black-Right-Pointing-Pointer Photolithography-based thin film transistors with PbS films at low temperatures. Black-Right-Pointing-Pointer Electron mobility for anneal-PbS devices of {approx} 0.14 cm{sup 2} V{sup -1} s{sup -1}. Black-Right-Pointing-Pointer Highest mobility reported in thin film transistors with PbS as the semiconductor.

  7. Photoluminescence Enhancement in Formamidinium Lead Iodide Thin Films

    NARCIS (Netherlands)

    Fang, Hong-Hua; Wang, Feng; Adjokatse, Sampson; Zhao, Ni; Loi, Maria Antonietta

    2016-01-01

    Formamidinium lead iodide (FAPbI(3)) has a broader absorption spectrum and better thermal stability than the most famous methylammonium lead iodide, thus exhibiting great potential for photovoltaic applications. In this report, the light-induced photoluminescence (PL) evolution in FAPbI(3) thin

  8. Phase transition in lead titanate thin films: a Brillouin study

    International Nuclear Information System (INIS)

    Kuzel, P; Dugautier, C; Moch, P; Marrec, F Le; Karkut, M G

    2002-01-01

    The elastic properties of both polycrystalline and epitaxial PbTiO 3 (PTO) thin films are studied using Brillouin scattering spectroscopy. The epitaxial PTO films were prepared by pulsed laser ablation on (1) a [0 0 1] single crystal of SrTiO 3 (STO) doped with Nb and (2) a [0 0 1] STO buffered with a layer of YBa 2 Cu 3 O 7 . The polycrystalline PTO films were prepared by sol-gel on a Si substrate buffered with TiO 2 and Pt layers. The data analysis takes into account the ripple and the elasto-optic contributions. The latter significantly affects the measured spectra since it gives rise to a Love mode in the p-s scattering geometry. At room temperature, the spectra of the epitaxially grown samples are interpreted using previously published elastic constants of PTO single crystals. Sol-gel samples exhibit appreciable softening of the effective elastic properties compared to PTO single crystals: this result is explained by taking into account the random orientation of the microscopic PTO grains. For both the polycrystalline and the epitaxial films we have determined that the piezoelectric terms do not contribute to the spectra. The temperature dependence of the spectra shows strong anomalies of the elastic properties near the ferroelectric phase transition. Compared to the bulk, T C is higher in the sol-gel films, while in the epitaxial films the sign of the T C shift depends on the underlying material

  9. Synthesis and characterization of lead sulphide thin films from ethanolamine (ETA) complexing agent chemical bath

    Science.gov (United States)

    Gashaw Hone, Fekadu; Dejene, F. B.

    2018-02-01

    Polycrystalline lead sulphide (PbS) thin films were grown on glass substrates by chemical bath deposition route using ethanolamine (ETA) as a complexing agent. The effects of ETA molar concentration on the structural, morphological, electrical and optical properties of lead sulphide thin films were thoroughly studied. The XRD analyses revealed that all the deposited thin films were face center cubic crystal structure and their preferred orientations were varied along the (111) and (200) planes. The XRD results further confirmed that ETA concentration had a significant effects on the strain, average crystalline size and dislocation density of the deposited thin films. The SEM studies illustrated the evolution and transformation of surface morphology as ETA molar concentration increased from 0.41 M to 1.64 M. The energy dispersive x-ray analysis was used to verify the compositional elements of the deposited thin films. Optical spectroscopy investigation established that the band gap of the PbS thin films were reduced from 0.98 eV to 0.68 eV as ETA concentration increased. The photoluminescence spectra showed a well defined peak at 428 nm and shoulder around 468 nm for all PbS thin films. The electrical resistivity of the thin films found in the order of 103 Ω cm at room temperature and decreased as the ETA molar concentration was increased.

  10. Optical Analysis of Iron-Doped Lead Sulfide Thin Films for Opto-Electronic Applications

    Science.gov (United States)

    Chidambara Kumar, K. N.; Khadeer Pasha, S. K.; Deshmukh, Kalim; Chidambaram, K.; Shakil Muhammad, G.

    Iron-doped lead sulfide thin films were deposited on glass substrates using successive ionic layer adsorption and reaction method (SILAR) at room temperature. The X-ray diffraction pattern of the film shows a well formed crystalline thin film with face-centered cubic structure along the preferential orientation (1 1 1). The lattice constant is determined using Nelson Riley plots. Using X-ray broadening, the crystallite size is determined by Scherrer formula. Morphology of the thin film was studied using a scanning electron microscope. The optical properties of the film were investigated using a UV-vis spectrophotometer. We observed an increase in the optical band gap from 2.45 to 3.03eV after doping iron in the lead sulfide thin film. The cutoff wavelength lies in the visible region, and hence the grown thin films can be used for optoelectronic and sensor applications. The results from the photoluminescence study show the emission at 500-720nm. The vibrating sample magnetometer measurements confirmed that the lead sulfide thin film becomes weakly ferromagnetic material after doping with iron.

  11. Sulfide precursor concentration and lead source effect on PbS thin films properties

    International Nuclear Information System (INIS)

    Beddek, L.; Messaoudi, M.; Attaf, N.; Aida, M.S.; Bougdira, J.

    2016-01-01

    Lead sulfide (PbS) thin films were synthesized using chemical bath deposition (CBD). Bath solutions are formed of various concentrations of thiourea, sulfide source, ranged from 0.6 to 1.2 M and two different salts as Pb source (lead acetate and lead nitrate). From the growth mechanism, we inferred that PbS is formed through the ion by ion process when using acetate lead source, while, using nitrate source yields to films growth through the complex-decomposition process. Due to the difference in the involved growth process, lead acetate produces films with larger crystallite size (from 4 to 16 nm), smooth and dense films. However, lead nitrate produces rough films with smaller crystallite size (from 1 to 4 nm). Increasing the thiourea concentration results in crystallinity improvement when using lead acetate and, oppositely, in crystallinity degradation when using lead nitrate. Due to the quantum effect caused by the small crystallite sizes, the films optical gap is varied from 0.5 to 0.9 eV. - Highlights: • PbS thin films were synthesized by chemical bath deposition. • Ion by ion is the growth process when using the acetate lead source. • Deposition process is by complex-decomposition when using nitrate source. • Lead acetate yields to dense films with larger crystallite size. • Lead nitrate produces rough films with smaller crystallite size.

  12. Sulfide precursor concentration and lead source effect on PbS thin films properties

    Energy Technology Data Exchange (ETDEWEB)

    Beddek, L.; Messaoudi, M.; Attaf, N. [Laboratoire Couche Minces et Interfaces, Université frères Mentouri Constantine, 25000, Constantine (Algeria); Aida, M.S., E-mail: aida_salah2@yahoo.fr [Laboratoire Couche Minces et Interfaces, Université frères Mentouri Constantine, 25000, Constantine (Algeria); Bougdira, J. [Université de Lorraine, Institut Jean Lamour UMR 7198, Vandoeuvre 54506 (France)

    2016-05-05

    Lead sulfide (PbS) thin films were synthesized using chemical bath deposition (CBD). Bath solutions are formed of various concentrations of thiourea, sulfide source, ranged from 0.6 to 1.2 M and two different salts as Pb source (lead acetate and lead nitrate). From the growth mechanism, we inferred that PbS is formed through the ion by ion process when using acetate lead source, while, using nitrate source yields to films growth through the complex-decomposition process. Due to the difference in the involved growth process, lead acetate produces films with larger crystallite size (from 4 to 16 nm), smooth and dense films. However, lead nitrate produces rough films with smaller crystallite size (from 1 to 4 nm). Increasing the thiourea concentration results in crystallinity improvement when using lead acetate and, oppositely, in crystallinity degradation when using lead nitrate. Due to the quantum effect caused by the small crystallite sizes, the films optical gap is varied from 0.5 to 0.9 eV. - Highlights: • PbS thin films were synthesized by chemical bath deposition. • Ion by ion is the growth process when using the acetate lead source. • Deposition process is by complex-decomposition when using nitrate source. • Lead acetate yields to dense films with larger crystallite size. • Lead nitrate produces rough films with smaller crystallite size.

  13. Defect enhanced optic and electro-optic properties of lead zirconate titanate thin films

    Directory of Open Access Journals (Sweden)

    M. M. Zhu

    2011-12-01

    Full Text Available Pb(Zr1-xTixO3 (PZT thin films near phase morphotropic phase boundary were deposited on (Pb0.86La0.14TiO3-coated glass by radio frequency sputtering. A retrieved analysis shows that the lattice parameters of the as-grown PZT thin films were similar to that of monoclinic PZT structure. Moreover, the PZT thin films possessed refractive index as high as 2.504 in TE model and 2.431 in TM model. The as-grown PZT thin film had one strong absorption peak at 632.6 nm, which attributed to lead deficiency by quantitative XPS analysis. From the attractive properties achieved, electro-optic and photovoltaic characteristic of the films were carried out.

  14. Comparison of chemical solution deposition systems for the fabrication of lead zirconate titanate thin films

    International Nuclear Information System (INIS)

    Lecarpentier, F.; Daglish, M.; Kemmitt, T.

    2001-01-01

    Ferroelectric thin films of lead zirconate titanate Pb(Zr x Ti 1-x )O 3 (PZT) were prepared from five chemical solution deposition (CSD) systems, namely methoxyethanol, citrate, diol, acetic acid and triethanolamine. Physical characteristics of the solutions, processing parameters and physical and electrical properties of the films were used to assess the relative advantages and disadvantages of the different chemical systems. All the CSD systems decomposed to produce single phase perovskite PZT at temperatures above 650 deg C. Thin film deposition was influenced by the specific characteristics of each system such as wetting on the substrate and viscosity. Distinct precursor effects on the thin film crystallinity and electrical performance were revealed. The diol route yielded films with the highest crystallite size, highest permittivity and lowest loss tangent. The relative permittivity exhibited by films made by the other routes were 25% to 35% lower at equivalent thicknesses. Copyright (2001) The Australian Ceramic Society

  15. Optical and structural characteristics of lead sulfides thin films

    International Nuclear Information System (INIS)

    Karim Deraman; Bakar Ismail; Samsudi Sakrani; Gould, R.D.

    1992-01-01

    Tin sulfide films have been prepared by evaporation technique at 1x10 - 4 torr and at substrate temperatures between 100 to 300 0 C. The films thickness were 52 to 370 nm. From the absorption 1.47 eV and X-ray diffraction patent shows that the composition of films have changed from SnS 2 (at low temperature) to SnS (at higher temperature)

  16. Adhesion strength of lead zirconate titanate sol-gel thin films

    Energy Technology Data Exchange (ETDEWEB)

    Berfield, Thomas A., E-mail: tom.berfield@louisville.edu [Department of Mechanical Engineering, University of Louisville, Louisville, KY 40292 (United States); Kitey, Rajesh [Department of Aerospace Engineering, Indian Institute of Technology Kanpur, Kanpur (India); Kandula, Soma S. [Intel Corporation, Portland, OR (United States)

    2016-01-01

    The adhesion strength between a thin film and substrate is often the critical parameter that controls the initiation as well as the mode of film failure. In this work, a laser-based spallation method is used to determine the adhesion strength of “as deposited” lead zirconate titanate (PZT) sol-gel thin films on the two functionally different substrates. For the first case, PZT sol-gel film is deposited onto bare Si/SiO{sub 2} substrates via spin casting. The extremely high adhesion strength between the film and the substrate necessitated an additional platinum mass superlayer to be deposited on top of the PZT film in order to induce interfacial failure. For the superlayer film system, a hybrid experimental/numerical method is employed for determining the substrate/film interfacial strength, quantified to be in the range of 460–480 MPa. A second substrate variation with lower adhesion strength is also prepared by applying a self-assembled octadecyltrichlorosilane (ODS) monolayer to the Si/SiO{sub 2} substrate prior to the film deposition. For the monolayer-coated substrate case, the adhesion strength is observed to be significantly lower (54.7 MPa) when compared to the earlier case. - Highlights: • A non-contact laser spallation method is used to determine PZT film adhesion. • A mediated self-assembled monolayer is shown to greatly reduce interface strength. • Adhesion strength for even well-bonded thin films was found using a superlayer.

  17. Nanoscale characterization and local piezoelectric properties of lead-free KNN-LT-LS thin films

    Science.gov (United States)

    Abazari, M.; Choi, T.; Cheong, S.-W.; Safari, A.

    2010-01-01

    We report the observation of domain structure and piezoelectric properties of pure and Mn-doped (K0.44,Na0.52,Li0.04)(Nb0.84,Ta0.1,Sb0.06)O3 (KNN-LT-LS) thin films on SrTiO3 substrates. It is revealed that, using piezoresponse force microscopy, ferroelectric domain structure in such 500 nm thin films comprised of primarily 180° domains. This was in accordance with the tetragonal structure of the films, confirmed by relative permittivity measurements and x-ray diffraction patterns. Effective piezoelectric coefficient (d33) of the films were calculated using piezoelectric displacement curves and shown to be ~53 pm V-1 for pure KNN-LT-LS thin films. This value is among the highest values reported for an epitaxial lead-free thin film and shows a great potential for KNN-LT-LS to serve as an alternative to PZT thin films in future applications.

  18. Nanoscale characterization and local piezoelectric properties of lead-free KNN-LT-LS thin films

    Energy Technology Data Exchange (ETDEWEB)

    Abazari, M; Safari, A [Glenn Howatt Electroceramics Laboratories, Department of Materials Science and Engineering, Rutgers-The state University of New Jersey, Piscataway, NJ 08854 (United States); Choi, T; Cheong, S-W [Rutgers Center for Emergent Materials, Department of Physics and Astronomy, Rutgers-The state University of New Jersey, Piscataway, NJ 08854 (United States)

    2010-01-20

    We report the observation of domain structure and piezoelectric properties of pure and Mn-doped (K{sub 0.44},Na{sub 0.52},Li{sub 0.04})(Nb{sub 0.84},Ta{sub 0.1},Sb{sub 0.06})O{sub 3} (KNN-LT-LS) thin films on SrTiO{sub 3} substrates. It is revealed that, using piezoresponse force microscopy, ferroelectric domain structure in such 500 nm thin films comprised of primarily 180{sup 0} domains. This was in accordance with the tetragonal structure of the films, confirmed by relative permittivity measurements and x-ray diffraction patterns. Effective piezoelectric coefficient (d{sub 33}) of the films were calculated using piezoelectric displacement curves and shown to be {approx}53 pm V{sup -1} for pure KNN-LT-LS thin films. This value is among the highest values reported for an epitaxial lead-free thin film and shows a great potential for KNN-LT-LS to serve as an alternative to PZT thin films in future applications.

  19. Decomposition of oxidezed lead and aluminium thin films on molybdenum substrates

    International Nuclear Information System (INIS)

    Makarovskij, N.A.

    1981-01-01

    The decomposition of oxidized solid phase lead and aluminium thin films on molybdenum substrates in the process of diffusion annealing in the 5x10 -5 mm Hg vacuum at temperatures from 280 to 320 deg C and from 500 to 560 deg C, respectively, is investigated. The conclusion is made that failure of oxidized lead and aluminium thin film coatings is carried out by the mechanism of volumetric self-diffusion. Experimentally established values of activation energies of the process of lead (Qsub(Mo)sup(Pb)=29 kcal/mol) and aluminium (Qsub(Mo)sup(Al)=35 kcal/mol) film failure are close to corresponding activation energies of lead and aluminium volumetric self-diffusion, which agrees with the conclusions made [ru

  20. thin films

    Indian Academy of Sciences (India)

    microscopy (SEM) studies, respectively. The Fourier transform ... Thin films; chemical synthesis; hydrous tin oxide; FTIR; electrical properties. 1. Introduction ... dehydrogenation of organic compounds (Hattori et al 1987). .... SEM images of (a) bare stainless steel and (b) SnO2:H2O thin film on stainless steel substrate at a ...

  1. Electric field dependence of excess electrical conductivity below transition temperature in thin superconducting lead films

    Energy Technology Data Exchange (ETDEWEB)

    Ashwini Kumar, P K; Duggal, V P [Delhi Univ. (India). Dept. of Physics and Astrophysics

    1976-01-26

    Results of measurements of the electric field dependence of the excess electrical conductivity are reported in thin superconducting lead films below the transition temperature. It is observed that the normal state sheet resistance has some effect on the nonlinearity but the theory of Yamaji still fits well to the experimental data.

  2. Effect of ultraviolet light on fatigue of lead zirconate titanate thin-film capacitors

    Science.gov (United States)

    Lee, J.; Esayan, S.; Safari, A.; Ramesh, R.

    1994-07-01

    Fatigue of Pb(Zr0.52Ti0.48)O3 (PZT) thin-film capacitors was studied under UV light (He-Cd laser, λ=325 nm). The remanent polarization of the PZT film capacitors increased upon light illumination. Fatigue resistance was also improved under UV light. During fatigue test, the change in polarization of PZT films upon UV light illumination increased gradually with cycling. These results were examined within the framework of the polarization screening model, which is suggested as an essential process for fatigue. This leads to a conclusion that more charged defects are involved in the fatigue process through internal screening of polarization.

  3. Structural and electrochemical analysis of chemically synthesized microcubic architectured lead selenide thin films

    Science.gov (United States)

    Bhat, T. S.; Shinde, A. V.; Devan, R. S.; Teli, A. M.; Ma, Y. R.; Kim, J. H.; Patil, P. S.

    2018-01-01

    The present work deals with the synthesis of lead selenide (PbSe) thin films by simple and cost-effective chemical bath deposition method with variation in deposition time. The structural, morphological, and electrochemical properties of as-deposited thin films were examined using characterization techniques such as X-ray diffraction spectroscopy (XRD), field-emission scanning electron microscopy (FE-SEM), X-ray photoelectron spectroscopy (XPS), cyclic voltammetry (CV), galvanostatic charge-discharge and electrochemical impedance spectroscopy. XRD reveals formation of rock salt phase cubic structured PbSe. FE-SEM images show the formation of microcubic structured morphology. The existence of the PbSe is confirmed from the XPS analysis. On the other hand, CV curves show four reaction peaks corresponding to oxidation [PbSe and Pb(OH)2] and reduction (PbO2 and Pb(OH)2) at the surface of PbSe thin films. The PbSe:2 sample deposited for 80 min. shows maximum specific capacitance of 454 ± 5 F g- 1 obtained at 0.25 mA cm- 2 current density. The maximum energy density of 69 Wh kg- 1 was showed by PbSe:2 electrode with a power density of 1077 W kg- 1. Furthermore, electrochemical impedance studies of PbSe:2 thin film show 80 ± 3% cycling stability even after 500 CV cycles. Such results show the importance of microcubic structured PbSe thin film as an anode in supercapacitor devices.

  4. Characterisation of lead barium zirconate thin films for utilisation of the electrocaloric effect

    Energy Technology Data Exchange (ETDEWEB)

    Shaw, C.P., E-mail: c.p.shaw@cranfield.ac.uk [Surface Engineering and Nanotechnology Institute, Manufacturing and Materials Department, Cranfield University, Cranfield, Bedfordshire MK43 0AL (United Kingdom); Zhang, Qi, E-mail: q.zhang@cranfield.ac.uk [Surface Engineering and Nanotechnology Institute, Manufacturing and Materials Department, Cranfield University, Cranfield, Bedfordshire MK43 0AL (United Kingdom); Correia, T.M., E-mail: Tatiana.correia@ktn-uk.org [Knowledge Transfer Network (United Kingdom); Weaver, P.M., E-mail: paul.weaver@innotecuk.com [InotekUK (United Kingdom)

    2016-08-01

    Characterisation of a composition of Lead Barium Zirconate thin films deposited by a spin coating sol-gel process onto platinised silicon substrates has been undertaken to investigate a potential application utilising the reported electrocaloric properties of the material. Xray diffraction studies revealed that above 700 °C the presence of pyrochlore phase was replaced by ferroelectric phase but the identification of antiferroelectric phases previously reported could not be identified. Wet etching of the films produced an insoluble residue containing only evidence of zirconium out of the original three metals, which resembled a skeletal structure similar to the original rosette morphology of the annealed films. Elemental analysis of the annealed films using EDX indicated a non-target Pb:Ba:Zr ratio, which suggested a reduced Zr content of the films. “Solution-like” rather than “sol-like” nature of the spin coated sol and phase boundary proximity are proposed for reported observations, and a mechanism is proposed to account for the unusual observed trend in dielectric constant. - Highlights: • Characterisation of sol-gel deposited Lead barium zirconnate films. • Absence of previously reported antiferroelectric phase. • Identification of proposed non-PBZ phase. • Anomalous increase in film capacitance with thickness interpreted.

  5. Thin films

    International Nuclear Information System (INIS)

    Strongin, M.; Miller, D.L.

    1976-01-01

    This article reviews the phenomena that occur in films from the point of view of a solid state physicist. Films form the basis for many established and developing technologies. Metal layers have always been important for optical coatings and as protective coatings. In the most sophisticated cases, films and their interaction on silicon surfaces form the basis of modern electronic technology. Films of silicon, GaAs and composites of these materials promise to lead to practical photovoltaic devices

  6. Attachment of lead wires to thin film thermocouples mounted on high temperature materials using the parallel gap welding process

    Science.gov (United States)

    Holanda, Raymond; Kim, Walter S.; Pencil, Eric; Groth, Mary; Danzey, Gerald A.

    1990-01-01

    Parallel gap resistance welding was used to attach lead wires to sputtered thin film sensors. Ranges of optimum welding parameters to produce an acceptable weld were determined. The thin film sensors were Pt13Rh/Pt thermocouples; they were mounted on substrates of MCrAlY-coated superalloys, aluminum oxide, silicon carbide and silicon nitride. The entire sensor system is designed to be used on aircraft engine parts. These sensor systems, including the thin-film-to-lead-wire connectors, were tested to 1000 C.

  7. Lead-doped electron-beam-deposited Bi-Sr-Ca-Cu-O superconducting thin films

    Energy Technology Data Exchange (ETDEWEB)

    Agnihotry, S.A.; Saini, K.K.; Kant, C.; Sharma, C.P.; Ekbote, S.N.; Asthana, P.; Nagpal, K.C.; Chandra, S. (National Physical Lab., New Delhi (India))

    1991-03-20

    Superconducting thin films of the lead-doped Bi-Sr-Ca-Cu-O system have been prepared on (100) single-crystal SrTiO{sub 3} substrates by an electron beam deposition technique using a single sintered pellet as the evaporation source. As-deposited films are amorphous and non-superconducting; post-deposition annealing at an optimized temperature in air has been found to result in crystalline and superconducting films. The superconducting characteristics of the films have been observed to be sensitive not only to the duration and temperature of post-deposition annealing but also to the lead content and the sintering parameters for the pellet to be used as the evaporation source. A pellet with nominal composition Bi{sub 3}Pb{sub 1}Sr{sub 3}Ca{sub 3}Cu{sub 4}O{sub y} that had been sintered for 200 h zero resistivity Tc{sup 0}=112 K. However, films deposited using such a pellet as the evaporation source had Tc{sup 0} {approx equal} 73-78 K, as had the films deposited from a pellet without any lead. We investigated systematically films deposited from pellets with more lead and sintered for different durations. It is evident from these investigations that pellets with nominal composition Bi{sub 3}Pb{sub 2}Sr{sub 3}Ca{sub 3}Cu{sub 4}O{sub y}, i.e. with an excess of lead, and sintered for about 75 h when used as the evaporation source yield films with Tc{sup 0} {approx equal} 100 K when annealed between 835 and 840deg C for an optimized long duration. The films are characterized by X-ray diffraction and energy-dispersive spectroscopy techniques and have been found to be highly c axis oriented. The effect of lead in promoting a high Tc{sup 0}=110 K phase seems to be similar to that in bulk ceramics. (orig.).

  8. Sol-gel preparation of lead magnesium niobate (PMN) powders and thin films

    Science.gov (United States)

    Boyle, T.J.

    1999-01-12

    A method of preparing a lead magnesium niobium oxide (PMN), Pb(Mg{sub 1/3}Nb{sub 2/3})O{sub 3}, precursor solution by a solvent method wherein a liquid solution of a lead-complex PMN precursor is combined with a liquid solution of a niobium-complex PMN precursor, the combined lead- and niobium-complex liquid solutions are reacted with a magnesium-alkyl solution, forming a PMN precursor solution and a lead-based precipitate, and the precipitate is separated from the reacted liquid PMN precursor solution to form a precipitate-free PMN precursor solution. This precursor solution can be processed to form both ferroelectric powders and thin films. 3 figs.

  9. Growth and properties of lead iodide thin films by spin coating

    Indian Academy of Sciences (India)

    X-ray diffraction patterns revealed that the thin films possessed hexagonal structures. The thin films .... of inorganic PbI2 in an organic solvent depends on the co- ordination .... Figure 7b and c shows the absorption coefficient of both samples ...

  10. Structural characterization of lead sulfide thin films by means of X ...

    Indian Academy of Sciences (India)

    Administrator

    This detector can operate at any temperature between 77 and 300 K (Johnson 1984). The possibility of using very thin (20–60 nm) chemically deposited PbS films as solar control coatings have been discussed by many workers. (Nair et al 1989). Analyses of the mechanism of photo- conductivity in PbS thin films are also ...

  11. Structural, optical and electrical properties of cadmium-doped lead chalcogenide (PbSe) thin films

    International Nuclear Information System (INIS)

    Khan, Shamshad A.; Khan, Zishan H.; El-Sebaii, A.A.; Al-Marzouki, F.M.; Al-Ghamdi, A.A.

    2010-01-01

    (PbSe) 100-x Cd x thin films of thickness 3000 A with variable concentrations of Cd (x=5, 10, 15 and 20) were prepared by thermal evaporation on glass substrates at room temperature at a base pressure of 10 -6 Torr. The structural, optical and electrical properties of these films were studied. X-ray diffraction patterns were used to determine the crystal structure of the films. Films were of polycrystalline texture over the whole range of study. Optical constants of all films were determined by absorbance and reflection measurements in a wavelength range 400-1200 nm. Analysis of the optical absorption data showed that the rule of direct transitions predominates. The values of the absorption coefficient (α), extinction coefficient (k) and imaginary part of the dielectric constant were found to increase with increasing Cd content in lead chalcogenides while the refractive index (n) and real part of dielectric constant were increased with increasing Cd concentration up to 15% and then they decreased with 20% of Cd content in PbSe. These results were interpreted in terms of the change in concentration of localized states due to the shift in Fermi level. The dc conductivities and activation energies of the films were measured in the temperature range 298-398 K. It was observed that the dc conductivity increases at all temperatures with the increase of Cd content in lead chalcogenide system. The experimental data suggests that the conduction is due to the thermally assisted tunneling of the carriers in the localized states near the band edges. The activation energy and optical band gap were found to decrease with increasing Cd concentration in lead chalcogenide.

  12. Structural, optical and electrical characterization of Ag doped lead chalcogenide (PbSe) thin films

    Energy Technology Data Exchange (ETDEWEB)

    Al-Ghamdi, A.A., E-mail: aghamdi90@hotmail.com [Department of Physics, Faculty of Science, King Abdulaziz University, Jeddah (Saudi Arabia); Al-Heniti, S. [Department of Physics, Faculty of Science, King Abdulaziz University, Jeddah (Saudi Arabia); Khan, Shamshad A. [Department of Physics, St. Andrew' s College, Gorakhpur, UP (India)

    2013-03-15

    Research and development efforts are currently underway to fabricate a variety of solid state devices. A good deal of information regarding the synthesis, structural, optical and electrical properties of Ag doped lead chalcogenides have been revealed. The bulk polycrystalline (PbSe){sub 100-x}Ag{sub x} ternary chalcogenides are prepared by diffusion technique. The XRD patterns recorded for the (PbSe){sub 100-x}Ag{sub x} thin films prepared by vacuum deposition technique, show that these films are polycrystalline in nature. The optical measurements reveal that the (PbSe){sub 100-x}Ag{sub x} thin films possess direct band gap and the band gap energy decreases with an increase of Ag concentration. The extinction coefficient (k) and refractive index (n) are found to be changing by increasing Ag concentration in PbSe. These results are interpreted in terms of the change in concentration of localized states due to the shift in Fermi level. The dc conductivities of (PbSe){sub 100-x}Ag{sub x} thin films are measured in temperature range 303-403 K. It is observed that the dc conductivity increases at all the temperatures with an increase of Ag content in PbSe system. The experimental data suggests that the conduction is due to thermally assisted tunneling of the charge carriers in the localized states near the band edges. The activation energy and optical band gap are found to decrease with increasing Ag concentration in lead chalcogenide and there are good agreements between these two values. - Highlights: Black-Right-Pointing-Pointer (PbSe){sub 100-x}Ag{sub x} thin films has been investigated. Black-Right-Pointing-Pointer Polycrystalline nature has been verified by X-ray diffraction. Black-Right-Pointing-Pointer Optical absorption data showed the rules of direct transitions predominate. Black-Right-Pointing-Pointer Dc conductivity increases with an increase of Ag content in PbSe system. Black-Right-Pointing-Pointer Increase of Ag concentration causes a decrease in E{sub g

  13. Reduction of etching damage in lead-zirconate-titanate thin films with inductively coupled plasma

    International Nuclear Information System (INIS)

    Lim, Kyu-Tae; Kim, Kyoung-Tae; Kim, Dong-Pyo; Kim, Chang-Il

    2003-01-01

    In this work, we etched lead-zirconate-titanate (PZT) films with various additive gases (O 2 and Ar) in Cl 2 /CF 4 plasmas, while mixing ratio was fixed at 8/2. After the etching, the plasma induced damages are characterized in terms of hysteresis curves, leakage current, retention properties, and switching polarization. When the electrical properties of PZT etched in O 2 or Ar added to Cl 2 /CF 4 were compared, the value of remanent polarization in O 2 added to Cl 2 /CF 4 plasma is higher than that in Ar added plasma. The maximum etch rate of the PZT thin films was 145 nm/min for 30% Ar added Cl 2 /CF 4 gas having mixing ratio of 8/2 and 110 nm/min for 10% O 2 added to that same gas mixture. In order to recover the ferroelectric properties of the PZT thin films after etching, we annealed the etched PZT thin films at 550 deg. C in an O 2 atmosphere for 10 min. From the hysteresis curves, leakage current, retention property, and switching polarization, the reduction of the etching damage and the recovery via the annealing turned out to be more effective when O 2 was added to Cl 2 /CF 4 than Ar. X-ray diffraction showed that the structural damage was lower when O 2 was added to Cl 2 /CF 4 and the improvement in the ferroelectric properties of the annealed samples was consistent with the increased intensities of the (100) and the (200) PZT peaks

  14. Dielectric and piezoelectric properties of lead-free (Bi,Na)TiO3-based thin films

    Science.gov (United States)

    Abazari, M.; Safari, A.; Bharadwaja, S. S. N.; Trolier-McKinstry, S.

    2010-02-01

    Dielectric and piezoelectric properties of morphotropic phase boundary (Bi,Na)TiO3-(Bi,K)TiO3-BaTiO3 epitaxial thin films deposited on SrRuO3 coated SrTiO3 substrates were reported. Thin films of 350 nm thickness exhibited small signal dielectric permittivity and loss tangent values of 750 and 0.15, respectively, at 1 kHz. Ferroelectric hysteresis measurements indicated a remanent polarization value of 30 μC/cm2 with a coercive field of 85-100 kV/cm. The thin film transverse piezoelectric coefficient (e31,f) of these films after poling at 600 kV/cm was found to be -2.2 C/m2. The results indicate that these BNT-based thin films are a potential candidate for lead-free piezoelectric devices.

  15. Effect of polarization fatigue on the Rayleigh coefficients of ferroelectric lead zirconate titanate thin films: Experimental evidence and implications

    Science.gov (United States)

    Lou, X. J.; Zhang, H. J.; Luo, Z. D.; Zhang, F. P.; Liu, Y.; Liu, Q. D.; Fang, A. P.; Dkhil, B.; Zhang, M.; Ren, X. B.; He, H. L.

    2014-09-01

    The effect of polarization fatigue on the Rayleigh coefficients of ferroelectric lead zirconate titanate (PZT) thin film was systematically investigated. It was found that electrical fatigue strongly affects the Rayleigh behaviour of the PZT film. Both the reversible and irreversible Rayleigh coefficients decrease with increasing the number of switching cycles. This phenomenon is attributed to the growth of an interfacial degraded layer between the electrode and the film during electrical cycling. The methodology used in this work could serve as an alternative way for evaluating the fatigue endurance and degradation in dielectric properties of ferroelectric thin-film devices during applications.

  16. Transverse piezoelectric coefficient measurement of flexible lead zirconate titanate thin films

    Energy Technology Data Exchange (ETDEWEB)

    Dufay, T.; Guiffard, B.; Seveno, R. [LUNAM Université, Université de Nantes, IETR (Institut d' Électronique et de Télécommunications de Rennes), UMR CNRS 6164, 2 rue de la Houssinière, BP 92208, 44322 Nantes Cedex 3 (France); Thomas, J.-C. [LUNAM Université, Université de Nantes-École Centrale Nantes, GeM (Institut de Recherche en Génie Civil et Ingénierie Mécanique), UMR CNRS 6183, 2 rue de la Houssinière, BP 92208, 44322 Nantes Cedex 3 (France)

    2015-05-28

    Highly flexible lead zirconate titanate, Pb(Zr,Ti)O{sub 3} (PZT), thin films have been realized by modified sol-gel process. The transverse piezoelectric coefficient d{sub 31} was determined from the tip displacement of bending-mode actuators made of PZT cantilever deposited onto bare or RuO{sub 2} coated aluminium substrate (16 μm thick). The influence of the thickness of ruthenium dioxide RuO{sub 2} and PZT layers was investigated for Pb(Zr{sub 0.57}Ti{sub 0.43})O{sub 3}. The modification of Zr/Ti ratio from 40/60 to 60/40 was done for 3 μm thick PZT thin films onto aluminium (Al) and Al/RuO{sub 2} substrates. A laser vibrometer was used to measure the beam displacement under controlled electric field. The experimental results were fitted in order to find the piezoelectric coefficient. Very large tip deflections of about 1 mm under low voltage (∼8 V) were measured for every cantilevers at the resonance frequency (∼180 Hz). For a given Zr/Ti ratio of 58/42, it was found that the addition of a 40 nm thick RuO{sub 2} interfacial layer between the aluminium substrate and the PZT layer induces a remarkable increase of the d{sub 31} coefficient by a factor of 2.7, thus corresponding to a maximal d{sub 31} value of 33 pC/N. These results make the recently developed PZT/Al thin films very attractive for both low frequency bending mode actuating applications and vibrating energy harvesting.

  17. Orientation of rapid thermally annealed lead zirconate titanate thin films on (111) Pt substrate

    International Nuclear Information System (INIS)

    Brooks, K.G.; Reaney, I.M.; Klissurska, R.; Huang, Y.; Bursill, L.A.; Setter, N.

    1994-01-01

    The nucleation, growth and orientation of lead zirconate titanate thin films prepared from organometallic precursor solutions by spin coating on (111) oriented platinum substrates and crystallized by rapid thermal annealing was investigated. The effects of pyrolysis temperature, post-pyrolysis thermal treatments, excess lead addition, and Nb dopant substitution are reported. The use of post pyrolysis oxygen anneals at temperatures in the regime of 350-450 deg C was found to strongly effect the kinetics of subsequent amorphous-pyrochlore perovskite crystallization by rapid thermal annealing. It has also allowed films of reproducible microstructure and textures (both (100) and (111)) to be prepared by rapid thermal annealing. It is suggested that such anneals and pyrolysis temperature affect the oxygen concentration/average Pb valence in the amorphous films prior to annealing. The changes in Pb valence state then affect the stability of the transient pyrochlore phase and thus the kinetics of perovskite crystallization. Nb dopant was also found to influence the crystallization kinetics. 28 refs., 18 figs

  18. Crystallization of sol-gel derived lead zirconate titanate thin films in argon and oxygen atmospheres

    International Nuclear Information System (INIS)

    Bursill, L.A.

    1994-01-01

    Electron diffraction and high-resolution electron microscopic techniques are applied to reveal the mechanisms of crystallization of 75 nm thin films of ferroelectric lead-zirconate-titanate (PZT). Sol-gel methods, followed by pyrolysis at 350 deg C, were used to provide a common starting point after which a variety of rapid-thermal annealing (RTA) experiments in the temperature range 400-700 deg C were made in argon, oxygen and nitrogen/hydrogen atmospheres. The results are interpreted in terms of the crystal chemical analysis, which points out that partial pressure of oxygen and heating rate are important experimental parameters which must be controlled if ferroelectric perovskite-type Pb 2 ZrTiO 6 , rather than pyrochlore-type Pb 2 ZrTiO 6+x , where O < X < 1 or -1 < X < O, is to be obtained after the RTA step. Thus significant improvements in the crystallization of perovskite-type PZT were clearly demonstrated by using argon atmospheres for the RTA step. The results have significance for the production of high-quality ferroelectric thin films, with improved switching and fatigue characteristics, since even small amounts of the pyrochlore phase prove detrimental for these properties. 18 refs., 1 tab., 10 figs

  19. Crystallization of sol-gel derived lead zirconate titanate thin films in argon and oxygen atmospheres

    Energy Technology Data Exchange (ETDEWEB)

    Bursill, L A [Melbourne Univ., Parkville, VIC (Australia). School of Physics; Brooks, K G [Ecole Polytechnique Federale, Lausanne (Switzerland)

    1994-12-31

    Electron diffraction and high-resolution electron microscopic techniques are applied to reveal the mechanisms of crystallization of 75 nm thin films of ferroelectric lead-zirconate-titanate (PZT). Sol-gel methods, followed by pyrolysis at 350 deg C, were used to provide a common starting point after which a variety of rapid-thermal annealing (RTA) experiments in the temperature range 400-700 deg C were made in argon, oxygen and nitrogen/hydrogen atmospheres. The results are interpreted in terms of the crystal chemical analysis, which points out that partial pressure of oxygen and heating rate are important experimental parameters which must be controlled if ferroelectric perovskite-type Pb{sub 2}ZrTiO{sub 6}, rather than pyrochlore-type Pb{sub 2}ZrTiO{sub 6+x}, where O < X < 1 or -1 < X < O, is to be obtained after the RTA step. Thus significant improvements in the crystallization of perovskite-type PZT were clearly demonstrated by using argon atmospheres for the RTA step. The results have significance for the production of high-quality ferroelectric thin films, with improved switching and fatigue characteristics, since even small amounts of the pyrochlore phase prove detrimental for these properties. 18 refs., 1 tab., 10 figs.

  20. Preparation and dielectric properties of compositionally graded lead barium zirconate thin films

    Energy Technology Data Exchange (ETDEWEB)

    Hao, Xihong, E-mail: xhhao@imust.edu.c [Functional Materials Research Laboratory, Tongji University, Shanghai 200092 (China); School of Materials and Metallurgy, Inner Mongolia University of Science and Technology, Baotou 014010 (China); Zhang, Zhiqing [School of Materials and Metallurgy, Inner Mongolia University of Science and Technology, Baotou 014010 (China); Zhou, Jing [State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070 (China); An, Shengli [School of Materials and Metallurgy, Inner Mongolia University of Science and Technology, Baotou 014010 (China); Zhai, Jiwei [Functional Materials Research Laboratory, Tongji University, Shanghai 200092 (China)

    2010-07-09

    Both up and down compositionally graded (Pb{sub 1-x}Ba{sub x})ZrO{sub 3} (PBZ) thin films with increasing x from 0.4 to 0.6 were deposited on Pt(1 1 1)-buffer layered silicon substrates through a sol-gel method. The microstructure and dielectric properties of graded PBZ thin films were investigated systemically. X-ray diffraction patterns confirmed that both PBZ films had crystallized into a pure perovskite phase after annealed 700 {sup o}C. Electrical measurement results showed that although up graded films had a slightly larger tunability, dielectric loss of down graded films was much lower than that of up graded films. Therefore, the figure of merit of down graded PBZ films was greatly enhanced, as compared with up graded films. Moreover, down graded PBZ thin films also displayed excellent temperature stability with a smaller temperature coefficient of capacitance (TCC) of -0.59 x 10{sup -3} {sup o}C{sup -1} from 20 {sup o}C to 80 {sup o}C.

  1. Structural and optical studied of nano structured lead sulfide thin films prepared by the chemical bath deposition technique

    Energy Technology Data Exchange (ETDEWEB)

    Al Din, Nasser Saad, E-mail: nsaadaldin@yahoo.com; Hussain, Nabiha, E-mail: nabihahssin@yahoo.com [Damascus University Faculty of Science, Department of physics, Homs (Syrian Arab Republic); Jandow, Nidhal, E-mail: nidhaljandow@yahoo.com [Al –Mustansiriyah University, College of Education, Department of physics, Baghdad (Iraq)

    2016-07-25

    Lead (II) Sulfide PbS thin films were deposited on glass substrates at 25°C by chemical bath deposition (CBD) method. The structural properties of the films were studied as a function of the concentration of Thiourea (CS (NH{sub 2}){sub 2}) as Source of Sulfide and deposition time. The surface morphology of the films was characterized by X-ray diffraction and SEM. The obtained results showed that the as-deposited films Polycrystalline had cubic crystalline phase that belong to S.G: Fm3m. We found that they have preferred orientation [200]. Also the thickness of thin films decrease with deposition time after certain value and, it observed free sulfide had orthorhombic phase. Optical properties showed that the thin films have high transmission at visible range and low transmission at UV, IR range. The films of PbS have direct band gap (I.68 - 2.32 ev) at 300 K the values of band energy decreases with increases thickness of the Lead (II) Sulfide films.

  2. Electrical Transport Mechanisms and Photoconduction in Undoped Crystalline Flash-Evaporated Lead Iodide Thin Films

    Science.gov (United States)

    Al-Daraghmeh, Tariq M.; Saleh, Mahmoud H.; Ahmad, Mais Jamil A.; Bulos, Basim N.; Shehadeh, Khawla M.; Jafar, Mousa M. Abdul-Gader

    2018-03-01

    The flash-evaporation technique was utilized to fabricate undoped 1.35-μm and 1.2-μm thick lead iodide films at substrate temperatures T_{{s}} = 150 °C and 200°C, respectively. The films were deposited onto a coplanar comb-like copper (Cu-) electrode pattern, previously coated on glass substrates to form lateral metal-semiconductor-metal (MSM-) structures. The as-measured constant- temperature direct-current (dc)-voltage ( I( {V;T} ) - V ) curves of the obtained lateral coplanar Cu-PbI2-Cu samples (film plus electrode) displayed remarkable ohmic behavior at all temperatures ( T = 18 - 90°C). Their dc electrical resistance R_{{dc}} (T ) revealed a single thermally-activated conduction mechanism over the temperature range with activation energy E_{{act}} ≈ 0.90 - 0.98 {eV} , slightly less than half of room-temperature bandgap energy E_{{g}} ( ≈ 2.3 {eV} ) of undoped 2H-polytype PbI2 single crystals. The undoped flash-evaporated {PbI}_{{x}} thin films were homogeneous and almost stoichiometric ( x ≈ 1.87 ), in contrast to findings on lead iodide films prepared by other methods, and were highly crystalline hexagonal 2H-polytypic structure with c-axis perpendicular to the surface of substrates maintained at T_{s} ≳ 150°C. Photoconductivity measurements made on these lateral Cu-PbI2-Cu-structures under on-off visible-light illumination reveal a feeble photoresponse for long wavelengths ( λ > 570 {nm} ), but a strong response to blue light of photon energy E_{{ph}} ≈ 2.73 {eV} ( > E_{{g}} ), due to photogenerated electron-hole (e-h) pairs via direct band-to-band electronic transitions. The constant-temperature/dc voltage current-time I( {T,V} ) - t curves of the studied lateral PbI2 MSM-structures at low ambient temperatures ( T < 50°C), after cutting off the blue-light illumination, exhibit two trapping mechanisms with different relaxation times. These strongly depend on V and T , with thermally generated charge carriers in the PbI2 mask photogenerated

  3. Substrate effects on photoluminescence and low temperature phase transition of methylammonium lead iodide hybrid perovskite thin films

    Science.gov (United States)

    Shojaee, S. A.; Harriman, T. A.; Han, G. S.; Lee, J.-K.; Lucca, D. A.

    2017-07-01

    We examine the effects of substrates on the low temperature photoluminescence (PL) spectra and phase transition in methylammonium lead iodide hybrid perovskite (CH3NH3PbI3) thin films. Structural characterization at room temperature with X-ray diffraction (XRD), scanning electron microscopy (SEM), and Raman spectroscopy indicated that while the chemical structure of films deposited on glass and quartz was similar, the glass substrate induced strain in the perovskite films and suppressed the grain growth. The luminescence response and phase transition of the perovskite thin films were studied by PL spectroscopy. The induced strain was found to affect both the room temperature and low temperature PL spectra of the hybrid perovskite films. In addition, it was found that the effects of the glass substrate inhibited a tetragonal to orthorhombic phase transition such that it occurred at lower temperatures.

  4. Thickness effect on the structure, grain size, and local piezoresponse of self-polarized lead lanthanum zirconate titanate thin films

    Energy Technology Data Exchange (ETDEWEB)

    Melo, M.; Araújo, E. B., E-mail: eudes@dfq.feis.unesp.br [Departamento de Física e Química, Faculdade de Engenharia de Ilha Solteira, UNESP—Univ. Estadual Paulista, 15385-000 Ilha Solteira, SP (Brazil); Shvartsman, V. V. [Institute for Materials Science, University Duisburg-Essen, 45141 Essen (Germany); Shur, V. Ya. [Institute of Natural Sciences, Ural Federal University, 620000 Ekaterinburg (Russian Federation); Kholkin, A. L. [Institute of Natural Sciences, Ural Federal University, 620000 Ekaterinburg (Russian Federation); Department of Physics and CICECO—Aveiro Institute of Materials, University of Aveiro, 3810-193 Aveiro (Portugal)

    2016-08-07

    Polycrystalline lanthanum lead zirconate titanate (PLZT) thin films were deposited on Pt/TiO{sub 2}/SiO{sub 2}/Si substrates to study the effects of the thickness and grain size on their structural and piezoresponse properties at nanoscale. Thinner PLZT films show a slight (100)-orientation tendency that tends to random orientation for the thicker film, while microstrain and crystallite size increases almost linearly with increasing thickness. Piezoresponse force microscopy and autocorrelation function technique were used to demonstrate the existence of local self-polarization effect and to study the thickness dependence of correlation length. The obtained results ruled out the bulk mechanisms and suggest that Schottky barriers near the film-substrate are likely responsible for a build-in electric field in the films. Larger correlation length evidence that this build-in field increases the number of coexisting polarization directions in larger grains leading to an alignment of macrodomains in thinner films.

  5. Comparison of lead zirconate titanate thin films on ruthenium oxide and platinum electrodes

    OpenAIRE

    Bursill, Les A.; Reaney, Ian M.; Vijay, Dilip P.; Desu, Seshu B.

    1994-01-01

    High-resolution and bright- and dark-field transmission electron microscopy are used to characterize and compare the interface structures and microstructure of PZT/RuO2/SiO2/Si and PZT/Pt/Ti/SiO2/Si ferroelectric thin films, with a view to understanding the improved fatigue characteristics of PZT thin films with RuO2 electrodes. The RuO2/PZT interface consists of a curved pseudoperiodic minimal surface. The interface is chemically sharp with virtually no intermixing of RuO2 and PZT, as eviden...

  6. Comparison of lead zirconate titanate thin films on ruthenium oxide and platinum electrodes

    International Nuclear Information System (INIS)

    Bursill, L.A.; Reaney, I.M.

    1994-01-01

    High-resolution and bright- and dark-field transmission electron microscopy are used to characterize and compare the interface structures and microstructure of PZT/RuO 2 /SiO 2 /Si and PZT/Pt/Ti/SiO 2 /Si ferroelectric thin films, with a view to understanding the improved fatigue characteristics of PZT thin films with RuO 2 electrodes. The RuO 2 /PZT interface consists of a curved pseudoperiodic minimal surface. The interface is chemically sharp with virtually no intermixing of RuO 2 and PZT, as evidenced by the atomic resolution images as well as energy dispersive X-ray analysis. A nanocrystalline pyrochlore phase Pb 2 ZrTiO 7-x (x ≠ 1) was found on the top surface of the PZT layer. The PZT/Pt/Ti/SiO 2 /Si thin film was well-crystallized and showed sharp interfaces throughout. Possible reasons for the improved fatigue characteristics of PZT/RuO 2 /SiO 2 /Si thin films are discussed. 13 refs; 7 figs

  7. Comparison of lead zirconate titanate thin films on ruthenium oxide and platinum electrodes

    Energy Technology Data Exchange (ETDEWEB)

    Bursill, L A; Reaney, I M

    1994-12-31

    High-resolution and bright- and dark-field transmission electron microscopy are used to characterize and compare the interface structures and microstructure of PZT/RuO{sub 2}/SiO{sub 2}/Si and PZT/Pt/Ti/SiO{sub 2}/Si ferroelectric thin films, with a view to understanding the improved fatigue characteristics of PZT thin films with RuO{sub 2} electrodes. The RuO{sub 2}/PZT interface consists of a curved pseudoperiodic minimal surface. The interface is chemically sharp with virtually no intermixing of RuO{sub 2} and PZT, as evidenced by the atomic resolution images as well as energy dispersive X-ray analysis. A nanocrystalline pyrochlore phase Pb{sub 2}ZrTiO{sub 7-x} (x {ne} 1) was found on the top surface of the PZT layer. The PZT/Pt/Ti/SiO{sub 2}/Si thin film was well-crystallized and showed sharp interfaces throughout. Possible reasons for the improved fatigue characteristics of PZT/RuO{sub 2}/SiO{sub 2}/Si thin films are discussed. 13 refs; 7 figs.

  8. Room temperature chemical synthesis of lead selenide thin films with preferred orientation

    Science.gov (United States)

    Kale, R. B.; Sartale, S. D.; Ganesan, V.; Lokhande, C. D.; Lin, Yi-Feng; Lu, Shih-Yuan

    2006-11-01

    Room temperature chemical synthesis of PbSe thin films was carried out from aqueous ammoniacal solution using Pb(CH3COO)2 as Pb2+ and Na2SeSO3 as Se2- ion sources. The films were characterized by a various techniques including, X-ray diffraction (XRD), energy dispersive X-ray analysis (EDAX), scanning electron microscopy (SEM), transmission electron microscopy (TEM), high resolution transmission electron microscopy (HR-TEM), selected area electron diffraction (SAED), Fast Fourier transform (FFT) and UV-vis-NIR techniques. The study revealed that the PbSe thin film consists of preferentially oriented nanocubes with energy band gap of 0.5 eV.

  9. Room temperature chemical synthesis of lead selenide thin films with preferred orientation

    Energy Technology Data Exchange (ETDEWEB)

    Kale, R.B. [Department of Chemical Engineering, National Tsing-Hua University, Hsin-Chu, Taiwan 30043 (China)]. E-mail: rb_kale@yahoo.co.in; Sartale, S.D. [Hahn Meitner Institute, Glienicker Strasse-100, D-14109 Berlin (Germany); Ganesan, V. [UGC-DAE Consortium for Scientific Research, University Campus, Khandwa Road, Indore 452017 (India); Lokhande, C.D. [Thin Film Physics Laboratory, Department of Physics, Shivaji University, Kolhapur 416004 (India); Lin, Y.-F. [Department of Chemical Engineering, National Tsing-Hua University, Hsin-Chu, Taiwan 30043 (China); Lu, S.-Y. [Department of Chemical Engineering, National Tsing-Hua University, Hsin-Chu, Taiwan 30043 (China)]. E-mail: sylu@mx.nthu.edu.tw

    2006-11-15

    Room temperature chemical synthesis of PbSe thin films was carried out from aqueous ammoniacal solution using Pb(CH{sub 3}COO){sub 2} as Pb{sup 2+} and Na{sub 2}SeSO{sub 3} as Se{sup 2-} ion sources. The films were characterized by a various techniques including, X-ray diffraction (XRD), energy dispersive X-ray analysis (EDAX), scanning electron microscopy (SEM), transmission electron microscopy (TEM), high resolution transmission electron microscopy (HR-TEM), selected area electron diffraction (SAED), Fast Fourier transform (FFT) and UV-vis-NIR techniques. The study revealed that the PbSe thin film consists of preferentially oriented nanocubes with energy band gap of 0.5 eV.

  10. Room temperature chemical synthesis of lead selenide thin films with preferred orientation

    International Nuclear Information System (INIS)

    Kale, R.B.; Sartale, S.D.; Ganesan, V.; Lokhande, C.D.; Lin, Y.-F.; Lu, S.-Y.

    2006-01-01

    Room temperature chemical synthesis of PbSe thin films was carried out from aqueous ammoniacal solution using Pb(CH 3 COO) 2 as Pb 2+ and Na 2 SeSO 3 as Se 2- ion sources. The films were characterized by a various techniques including, X-ray diffraction (XRD), energy dispersive X-ray analysis (EDAX), scanning electron microscopy (SEM), transmission electron microscopy (TEM), high resolution transmission electron microscopy (HR-TEM), selected area electron diffraction (SAED), Fast Fourier transform (FFT) and UV-vis-NIR techniques. The study revealed that the PbSe thin film consists of preferentially oriented nanocubes with energy band gap of 0.5 eV

  11. The importance of moisture in hybrid lead halide perovskite thin film fabrication

    NARCIS (Netherlands)

    Eperon, G.E.; Habisreutinger, S.N.; Leijtens, T.; Bruijnaers, B.J.; van Franeker, J.J.; deQuilettes, D.W.; Pathak, S.; Sutton, R.J.; Grancini, G.; Ginger, D.S.; Janssen, R.A.J.; Petrozza, A.; Snaith, H.J.

    2015-01-01

    Moisture, in the form of ambient humidity, has a significant impact on methylammonium lead halide perovskite films. In particular, due to the hygroscopic nature of the methylammonium component, moisture plays a significant role during film formation. This issue has so far not been well understood

  12. Misfit strain-film thickness phase diagrams and related electromechanical properties of epitaxial ultra-thin lead zirconate titanate films

    Energy Technology Data Exchange (ETDEWEB)

    Qiu, Q.Y.; Mahjoub, R. [School of Materials Science and Engineering, University of New South Wales, Sydney, NSW 2052 (Australia); Alpay, S.P. [Materials Science and Engineering Program and Institute of Materials Science, University of Connecticut, Storrs, CT 06269 (United States); Nagarajan, V., E-mail: nagarajan@unsw.edu.au [School of Materials Science and Engineering, University of New South Wales, Sydney, NSW 2052 (Australia)

    2010-02-15

    The phase stability of ultra-thin (0 0 1) oriented ferroelectric PbZr{sub 1-x}Ti{sub x}O{sub 3} (PZT) epitaxial thin films as a function of the film composition, film thickness, and the misfit strain is analyzed using a non-linear Landau-Ginzburg-Devonshire thermodynamic model taking into account the electrical and mechanical boundary conditions. The theoretical formalism incorporates the role of the depolarization field as well as the possibility of the relaxation of in-plane strains via the formation of microstructural features such as misfit dislocations at the growth temperature and ferroelastic polydomain patterns below the paraelectric-ferroelectric phase transformation temperature. Film thickness-misfit strain phase diagrams are developed for PZT films with four different compositions (x = 1, 0.9, 0.8 and 0.7) as a function of the film thickness. The results show that the so-called rotational r-phase appears in a very narrow range of misfit strain and thickness of the film. Furthermore, the in-plane and out-of-plane dielectric permittivities {epsilon}{sub 11} and {epsilon}{sub 33}, as well as the out-of-plane piezoelectric coefficients d{sub 33} for the PZT thin films, are computed as a function of misfit strain, taking into account substrate-induced clamping. The model reveals that previously predicted ultrahigh piezoelectric coefficients due to misfit-strain-induced phase transitions are practically achievable only in an extremely narrow range of film thickness, composition and misfit strain parameter space. We also show that the dielectric and piezoelectric properties of epitaxial ferroelectric films can be tailored through strain engineering and microstructural optimization.

  13. Optical thin film deposition

    International Nuclear Information System (INIS)

    Macleod, H.A.

    1979-01-01

    The potential usefulness in the production of optical thin-film coatings of some of the processes for thin film deposition which can be classified under the heading of ion-assisted techniques is examined. Thermal evaporation is the process which is virtually universally used for this purpose and which has been developed to a stage where performance is in almost all respects high. Areas where further improvements would be of value, and the possibility that ion-assisted deposition might lead to such improvements, are discussed. (author)

  14. Effect of oxygen partial pressure on texture development in lead zirconate titanate thin films processed from metalorganic precursors

    International Nuclear Information System (INIS)

    Norton, Jarrod L.; Liedl, Gerald L.; Slamovich, Elliott B.

    1999-01-01

    Metalorganic liquid precursors were used to examine the effects of processing atmosphere on texture development in oriented Pb(Zr 0.60 Ti 0.40 )O 3 thin films. After removal of organic ligands via pyrolysis, the films were heated at 25 degree sign C/min in a 5% H 2 /Ar atmosphere until a switching temperature, after which the atmosphere was switched to pure oxygen. The films were heated to a maximum temperature of 650 degree sign C with switching temperatures ranging from 450 to 600 degree sign C. The degree of (111) orientation in the lead zirconate titanate (PZT) films increased with increasing switching temperature, resulting in highly textured (111) PZT films. These results suggest that atmosphere control plays a significant role in texture development during rapid thermal processing. (c) 1999 Materials Research Society

  15. The Importance of Moisture in Hybrid Lead Halide Perovskite Thin Film Fabrication.

    Science.gov (United States)

    Eperon, Giles E; Habisreutinger, Severin N; Leijtens, Tomas; Bruijnaers, Bardo J; van Franeker, Jacobus J; deQuilettes, Dane W; Pathak, Sandeep; Sutton, Rebecca J; Grancini, Giulia; Ginger, David S; Janssen, Rene A J; Petrozza, Annamaria; Snaith, Henry J

    2015-09-22

    Moisture, in the form of ambient humidity, has a significant impact on methylammonium lead halide perovskite films. In particular, due to the hygroscopic nature of the methylammonium component, moisture plays a significant role during film formation. This issue has so far not been well understood and neither has the impact of moisture on the physical properties of resultant films. Herein, we carry out a comprehensive and well-controlled study of the effect of moisture exposure on methylammonium lead halide perovskite film formation and properties. We find that films formed in higher humidity atmospheres have a less continuous morphology but significantly improved photoluminescence, and that film formation is faster. In photovoltaic devices, we find that exposure to moisture, either in the precursor solution or in the atmosphere during formation, results in significantly improved open-circuit voltages and hence overall device performance. We then find that by post-treating dry films with moisture exposure, we can enhance photovoltaic performance and photoluminescence in a similar way. The enhanced photoluminescence and open-circuit voltage imply that the material quality is improved in films that have been exposed to moisture. We determine that this improvement stems from a reduction in trap density in the films, which we postulate to be due to the partial solvation of the methylammonium component and "self-healing" of the perovskite lattice. This work highlights the importance of controlled moisture exposure when fabricating high-performance perovskite devices and provides guidelines for the optimum environment for fabrication. Moreover, we note that often an unintentional water exposure is likely responsible for the high performance of solar cells produced in some laboratories, whereas careful synthesis and fabrication in a dry environment will lead to lower-performing devices.

  16. Temperature behavior of electrical properties of high-k lead-magnesium-niobium titanate thin-films

    Energy Technology Data Exchange (ETDEWEB)

    Chen Wenbin, E-mail: cwb0201@163.com [Electromechanical Engineering College, Guilin University of Electronic Technology (China); McCarthy, Kevin G. [Department of Electrical and Electronic Engineering, University College Cork (Ireland); Copuroglu, Mehmet; O' Brien, Shane; Winfield, Richard; Mathewson, Alan [Tyndall National Institute, University College Cork (Ireland)

    2012-05-01

    This paper reports on the temperature dependence of the electrical properties of high-k lead-magnesium-niobium titanate thin films processed with different compositions (with and without nanoparticles) and with different annealing temperatures (450 Degree-Sign C and 750 Degree-Sign C). These characterization results support the ongoing investigation of the material's electrical properties which are necessary before the dielectric can be used in silicon-based IC applications.

  17. Characterization of lead zirconate titanate (PZT)--indium tin oxide (ITO) thin film interface

    International Nuclear Information System (INIS)

    Sreenivas, K.; Sayer, M.; Laursen, T.; Whitton, J.L.; Pascual, R.; Johnson, D.J.; Amm, D.T.

    1990-01-01

    In this paper the interface between ultrathin sputtered lead zirconate titanate (PZT) films and a conductive electrode (indium tin oxide-ITO) is investigated. Structural and compositional changes at the PZT-ITO interface have been examined by surface analysis and depth profiling techniques of glancing angle x-ray diffraction, Rutherford backscattering (RBS), SIMS, Auger electron spectroscopy (AES), and elastic recoil detection analysis (ERDA). Studies indicate significant interdiffusion of lead into the underlying ITP layer and glass substrate with a large amount of residual stress at the interface. Influence of such compositional deviations at the interface is correlated to an observed thickness dependence in the dielectric properties of PZT films

  18. Substrate clamping effects on irreversible domain wall dynamics in lead zirconate titanate thin films.

    Science.gov (United States)

    Griggio, F; Jesse, S; Kumar, A; Ovchinnikov, O; Kim, H; Jackson, T N; Damjanovic, D; Kalinin, S V; Trolier-McKinstry, S

    2012-04-13

    The role of long-range strain interactions on domain wall dynamics is explored through macroscopic and local measurements of nonlinear behavior in mechanically clamped and released polycrystalline lead zirconate-titanate (PZT) films. Released films show a dramatic change in the global dielectric nonlinearity and its frequency dependence as a function of mechanical clamping. Furthermore, we observe a transition from strong clustering of the nonlinear response for the clamped case to almost uniform nonlinearity for the released film. This behavior is ascribed to increased mobility of domain walls. These results suggest the dominant role of collective strain interactions mediated by the local and global mechanical boundary conditions on the domain wall dynamics. The work presented in this Letter demonstrates that measurements on clamped films may considerably underestimate the piezoelectric coefficients and coupling constants of released structures used in microelectromechanical systems, energy harvesting systems, and microrobots.

  19. Thin Film Microbatteries

    International Nuclear Information System (INIS)

    Dudney, Nancy J.

    2008-01-01

    aerosol spray coating, for one or more components of the battery. The active materials used for the thin film cathodes and anodes are familiar intercalation compounds, but the microstructures and often the cycling properties of the thin films may be quite distinct from those of battery electrodes formed from powders. The thin film cathodes are dense and homogeneous with no added phases such as binders or electrolytes. When deposited at ambient temperatures, the films of cathodes, such as LiCoO 2 , V 2 O 5 , LiMn 2 O4 , LiFePO 4 are amorphous or nanocrystalline. But even in this form, they often act as excellent cathodes with large specific capacities and good stability for hundreds to thousands of cycles. Annealing the cathode films at temperatures of 300 to 800 C may be used to induce crystallization and grain growth of the desired intercalation compound. Crystallizing the cathode film generally improves the Li chemical diffusivity in the electrode material, and hence the power delivered by the battery, by 1-2 orders of magnitude. The microstructure is also tailored by the deposition and heat treatment. Figure 3 shows a fracture edge of an annealed LiCoO 2 cathode film on an alumina substrate. The columnar microstructure, which is typical of a vapor deposited film, sinters at high temperatures leaving small fissures between the dense columns. Such crystalline films also may have a preferred crystallographic orientation. For LiCoO 2 films the crystallographic texture differs for films deposited by sputtering versus pulse laser ablation processes. To improve the manufacturability of the thin film batteries, it would be beneficial to eliminate or minimize the temperature or duration of the annealing step. Several efforts have lead to low temperature fabrication of thin film batteries on polyimide substrates, but the battery capacity and rate are lower than those treated at high temperatures. For the battery anode, many designs use a vapor-deposited metallic lithium film as

  20. Photoexcitation dynamics in solution-processed formamidinium lead iodide perovskite thin films for solar cell applications

    NARCIS (Netherlands)

    Fang, Hong-Hua; Wang, Feng; Adjokatse, Sampson; Zhao, Ni; Even, Jacky; Loi, Maria Antonietta

    Formamidinium lead iodide (FAPbI(3)) is a newly developed hybrid perovskite that potentially can be used in high-efficiency solution-processed solar cells. Here, the temperature-dependent dynamic optical properties of three types of FAPbI(3) perovskite films (fabricated using three different

  1. Effect of multi-layered bottom electrodes on the orientation of strontium-doped lead zirconate titanate thin films

    Energy Technology Data Exchange (ETDEWEB)

    Bhaskaran, M. [Microelectronics and Materials Technology Centre, School of Electrical and Computer Engineering, RMIT University, GPO Box 2476V, Melbourne, Victoria 3001 (Australia)], E-mail: madhu.bhaskaran@gmail.com; Sriram, S. [Microelectronics and Materials Technology Centre, School of Electrical and Computer Engineering, RMIT University, GPO Box 2476V, Melbourne, Victoria 3001 (Australia); Mitchell, D.R.G.; Short, K.T. [Institute of Materials Engineering, Australian Nuclear Science and Technology Organisation (ANSTO), PMB 1, Menai, New South Wales 2234 (Australia); Holland, A.S. [Microelectronics and Materials Technology Centre, School of Electrical and Computer Engineering, RMIT University, GPO Box 2476V, Melbourne, Victoria 3001 (Australia)

    2008-09-30

    This article discusses the results from X-ray diffraction (XRD) analysis of piezoelectric strontium-doped lead zirconate titanate (PSZT) thin films deposited on multi-layer coatings on silicon. The films were deposited by RF magnetron sputtering on a metal coated substrate. The aim was to exploit the pronounced piezoelectric effect that is theoretically expected normal to the substrate. This work highlighted the influence that the bottom electrode architecture exerts on the final crystalline orientation of the deposited thin films. A number of bottom electrode architectures were used, with the uppermost metal layer on which PSZT was deposited being gold or platinum. The XRD analysis revealed that the unit cell of the PSZT thin films deposited on gold and on platinum were deformed, relative to expected unit cell dimensions. Experimental results have been used to estimate the unit cell parameters. The XRD results were then indexed based on these unit cell parameters. The choice and the thickness of the intermediate adhesion layers influenced the relative intensity, and in some cases, the presence of perovskite peaks. In some cases, undesirable reactions between the bottom electrode layers were observed, and layer architectures to overcome these reactions are also discussed.

  2. Thin film processes II

    CERN Document Server

    Kern, Werner

    1991-01-01

    This sequel to the 1978 classic, Thin Film Processes, gives a clear, practical exposition of important thin film deposition and etching processes that have not yet been adequately reviewed. It discusses selected processes in tutorial overviews with implementation guide lines and an introduction to the literature. Though edited to stand alone, when taken together, Thin Film Processes II and its predecessor present a thorough grounding in modern thin film techniques.Key Features* Provides an all-new sequel to the 1978 classic, Thin Film Processes* Introduces new topics, and sever

  3. Pyrolyzed thin film carbon

    Science.gov (United States)

    Tai, Yu-Chong (Inventor); Liger, Matthieu (Inventor); Harder, Theodore (Inventor); Konishi, Satoshi (Inventor); Miserendino, Scott (Inventor)

    2010-01-01

    A method of making carbon thin films comprises depositing a catalyst on a substrate, depositing a hydrocarbon in contact with the catalyst and pyrolyzing the hydrocarbon. A method of controlling a carbon thin film density comprises etching a cavity into a substrate, depositing a hydrocarbon into the cavity, and pyrolyzing the hydrocarbon while in the cavity to form a carbon thin film. Controlling a carbon thin film density is achieved by changing the volume of the cavity. Methods of making carbon containing patterned structures are also provided. Carbon thin films and carbon containing patterned structures can be used in NEMS, MEMS, liquid chromatography, and sensor devices.

  4. Formation of Ag nanoparticles in percolative Ag–PbTiO3 composite thin films through lead-rich Ag–Pb alloy particles formed as transitional phase

    International Nuclear Information System (INIS)

    Hu, Tao; Wang, Zongrong; Su, Yanbo; Tang, Liwen; Shen, Ge; Song, Chenlu; Han, Gaorong; Weng, Wenjian; Ma, Ning; Du, Piyi

    2012-01-01

    The Ag nanoparticle dispersed percolative PbTiO 3 ceramic thin film was prepared in situ by sol–gel method with excess lead introduced into a sol precursor. The influence of excess lead and the heat treatment time on the formation of Ag nanoparticles was investigated by energy dispersive X-ray spectra, scanning electron microscopy, X-ray diffraction, and ultraviolet–visible absorption spectra. Results showed that the excess lead introduced into the sol precursor was in favor of the crystallization of the thin film and in favor of formation of the perovskite phase without the pyrochlore phase. Lead-rich Ag–Pb alloy particles first formed in the thin films and then decomposed to become large numbers of Ag nanoparticles of about 3 nm in size in the thin films when the heat treatment time was longer than 2 min. The content of the Ag nanoparticles increased with increasing the heat treatment time. The percolative behavior appears typically in the Ag nanoparticle dispersed thin films. The dielectric constant of the thin film was about 3 times of that without Ag nanoparticles. - Highlights: ► The Ag nanoparticles formed in the PbTiO 3 percolative ceramic thin film. ► The Ag–Pb alloy particles formed as transitional phase during thin film preparation. ► The lead-rich Ag–Pb alloy particles decomposed to form Ag nanoparticles in the film. ► Permittivity of the thin film is 3 times higher than that without Ag nanoparticles.

  5. Pulsed laser deposition of piezoelectric lead zirconate titanate thin films maintaining a post-CMOS compatible thermal budget

    Science.gov (United States)

    Schatz, A.; Pantel, D.; Hanemann, T.

    2017-09-01

    Integration of lead zirconate titanate (Pb[Zrx,Ti1-x]O3 - PZT) thin films on complementary metal-oxide semiconductor substrates (CMOS) is difficult due to the usually high crystallization temperature of the piezoelectric perovskite PZT phase, which harms the CMOS circuits. In this work, a wafer-scale pulsed laser deposition tool was used to grow 1 μm thick PZT thin films on 150 mm diameter silicon wafers. Three different routes towards a post-CMOS compatible deposition process were investigated, maintaining a post-CMOS compatible thermal budget limit of 445 °C for 1 h (or 420 °C for 6 h). By crystallizing the perovskite LaNiO3 seed layer at 445 °C, the PZT deposition temperature can be lowered to below 400 °C, yielding a transverse piezoelectric coefficient e31,f of -9.3 C/m2. With the same procedure, applying a slightly higher PZT deposition temperature of 420 °C, an e31,f of -10.3 C/m2 can be reached. The low leakage current density of below 3 × 10-6 A/cm2 at 200 kV/cm allows for application of the post-CMOS compatible PZT thin films in low power micro-electro-mechanical-systems actuators.

  6. Pulsed voltage deposited lead selenide thin film as efficient counter electrode for quantum-dot-sensitized solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Jin, Bin Bin [Key Laboratory of Macromolecular Science of Shaanxi Province & School of Materials Science and Engineering, Shaanxi Normal University, Xi’an 710062 (China); Department of Chemical Engineering, Institute of Chemical Industry, Shaanxi Institute of Technology, Xi’an 710300 (China); Wang, Ye Feng [Key Laboratory of Macromolecular Science of Shaanxi Province & School of Materials Science and Engineering, Shaanxi Normal University, Xi’an 710062 (China); Wang, Xue Qing [Faculty of Chemical, Environmental and Biological Science and Technology, Dalian University of Technology, Dalian 116024 (China); Zeng, Jing Hui, E-mail: jhzeng@ustc.edu [Key Laboratory of Macromolecular Science of Shaanxi Province & School of Materials Science and Engineering, Shaanxi Normal University, Xi’an 710062 (China)

    2016-04-30

    Highlights: • PbSe thin film is deposited on FTO glass by a pulse voltage electrodeposition method. • The thin film is used as counter electrode (CE) in quantum dot-sensitized solar cell. • Superior electrocatalytic activity and stability in the polysulfide electrolyte is received. • The narrow band gap characteristics and p-type conductivity enhances the cell efficiency. • An efficiency of 4.67% is received for the CdS/CdSe co-sensitized solar cells. - Abstract: Lead selenide (PbSe) thin films were deposited on fluorine doped tin oxide (FTO) glass by a facile one-step pulse voltage electrodeposition method, and used as counter electrode (CE) in CdS/CdSe quantum dot-sensitized solar cells (QDSSCs). A power conversion efficiency of 4.67% is received for the CdS/CdSe co-sensitized solar cells, which is much better than that of 2.39% received using Pt CEs. The enhanced performance is attributed to the extended absorption in the near infrared region, superior electrocatalytic activity and p-type conductivity with a reflection of the incident light at the back electrode in addition. The physical and chemical properties were characterized by X-ray diffraction (XRD), scanning electron microscope (SEM), transmission electron microscopy (TEM), energy-dispersive spectroscopy (EDS), reflectance spectra, electrochemical impedance spectroscopy (EIS) and Tafel polarization measurements. The present work provides a facile pathway to an efficient CE in the QDSSCs.

  7. Accounting for the various contributions to pyroelectricity in lead zirconate titanate thin films

    Science.gov (United States)

    Hanrahan, B.; Espinal, Y.; Neville, C.; Rudy, R.; Rivas, M.; Smith, A.; Kesim, M. T.; Alpay, S. P.

    2018-03-01

    An understanding of the pyroelectric coefficient and particularly its relationship with the applied electric field is critical to predicting the device performance for infrared imaging, energy harvesting, and solid-state cooling devices. In this work, we compare direct measurements of the pyroelectric effect under pulsed heating to the indirect extraction of the pyroelectric coefficient from adiabatic hysteresis loops and predictions from Landau-Devonshire theory for PbZr0.52Ti0.48O3 (PZT 52/48) on platinized silicon substrates. The differences between these measurements are explained through a series of careful measurements that quantify the magnitude and direction of the secondary and field-induced pyroelectric effects. The indirect measurement is shown to be up to 25% of the direct measurement at high fields, while the direct measurements and theoretical predictions converge at high fields as the film approaches a mono-domain state. These measurements highlight the importance of directly measuring the pyroelectric response in thin films, where non-intrinsic effects can be a significant proportion of the total observed pyroelectricity. Material and operating conditions are also discussed which could simultaneously maximize all contributions to pyroelectricity.

  8. Photoemission Spectroscopy Studies of Methylammonium Lead Iodide Perovskite Thin Films and Interfaces

    Science.gov (United States)

    Thibau, Emmanuel S.

    Organometal halide perovskites have recently emerged as promising materials for fundamentally low-cost, high-performance optoelectronics. In this thesis, we utilize thermal co-evaporation of PbI2 and CH3NH 3 I to fabricate thin films of CH3NH3PbI 3. We first investigate the effect of stoichiometry on some of its structural, optical and electronic properties. Then, we study the energy level alignment of CH3NH3PbI3 with 6 organic semiconductors, revealing good agreement between the data and the theory of vacuum level alignment. Finally, the interface formed between CH3NH 3PbI3 and MoO3 is examined. The findings suggest migration of iodide species into the oxide layer, resulting in deterioration of its chemical and electronic properties. Insertion of an organic interlayer is shown to mitigate these undesirable effects. The results of this work could be of use in device engineering, where knowledge of such interfacial phenomena is of utmost importance in achieving optimized device structures.

  9. Ceramic Composite Thin Films

    Science.gov (United States)

    Ruoff, Rodney S. (Inventor); Stankovich, Sasha (Inventor); Dikin, Dmitriy A. (Inventor); Nguyen, SonBinh T. (Inventor)

    2013-01-01

    A ceramic composite thin film or layer includes individual graphene oxide and/or electrically conductive graphene sheets dispersed in a ceramic (e.g. silica) matrix. The thin film or layer can be electrically conductive film or layer depending the amount of graphene sheets present. The composite films or layers are transparent, chemically inert and compatible with both glass and hydrophilic SiOx/silicon substrates. The composite film or layer can be produced by making a suspension of graphene oxide sheet fragments, introducing a silica-precursor or silica to the suspension to form a sol, depositing the sol on a substrate as thin film or layer, at least partially reducing the graphene oxide sheets to conductive graphene sheets, and thermally consolidating the thin film or layer to form a silica matrix in which the graphene oxide and/or graphene sheets are dispersed.

  10. Lead-free (K0.5Na0.5)NbO3 thin films by pulsed laser deposition driving MEMS-based piezoelectric cantilevers

    NARCIS (Netherlands)

    Nguyen, Duc Minh; Dekkers, Jan M.; Houwman, Evert Pieter; Vu, H.T.; Vu, Hung N.; Rijnders, Augustinus J.H.M.

    2016-01-01

    Thin film capacitors of the lead-free (K0.5Na0.5)NbO3 (KNN) with (100) orientation were grown on Pt/Ti/SiO2/SOI (silicon-on-insulator) substrates by pulsed laser deposition. The films are pure phases and do not show other crystal orientations. The remnant polarization Pr, saturation polarization

  11. Thin Film & Deposition Systems (Windows)

    Data.gov (United States)

    Federal Laboratory Consortium — Coating Lab: Contains chambers for growing thin film window coatings. Plasma Applications Coating Lab: Contains chambers for growing thin film window coatings. Solar...

  12. Polarizaton recovery in lead zirconate titanate thin films deposited on nanosheets-beffered Si (oo1)

    NARCIS (Netherlands)

    Chopra, A.; Bayraktar, Muharrem; Nijland, Maarten; ten Elshof, Johan E.; Bijkerk, Frederik; Rijnders, Augustinus J.H.M.

    2016-01-01

    Fatigue behavior of Pb(Zr,Ti)O3 (PZT) films is one of the deterrent factors that limits the use of these films in technological applications. Thus, understanding and minimization of the fatigue behavior is highly beneficial for fabricating reliable devices using PZT films. We have investigated the

  13. Polarization recovery in lead zirconate titanate thin films deposited on nanosheets-buffered Si (001)

    OpenAIRE

    Anuj Chopra; Muharrem Bayraktar; Maarten Nijland; Johan E. ten Elshof; Fred Bijkerk; Guus Rijnders

    2016-01-01

    Fatigue behavior of Pb(Zr,Ti)O3 (PZT) films is one of the deterrent factors that limits the use of these films in technological applications. Thus, understanding and minimization of the fatigue behavior is highly beneficial for fabricating reliable devices using PZT films. We have investigated the fatigue behavior of preferentially oriented PZT films deposited on nanosheets-buffered Si substrates using LaNiO3 bottom and top electrodes. The films show fatigue of up to 10% at 100 kHz, whereas n...

  14. A study of the microstructure and optical properties of thin lead-dielectric cermet films. Ph.D. Thesis - Va. Polytechnic Inst. and State Univ.

    Science.gov (United States)

    Owen, R. B.

    1972-01-01

    A transmission electron microscopy study involving direct and replicating techniques is directed to a definition of the microstructure of radio frequency-sputtered, thin lead-dielectric cermet films. Once defined, this microstructure is used to obtain theoretical film refractive indices. The Maxwell Garnett theory provides a basis for the theoretical results. Measurements of film transmission and reflectivity are used to obtain rough experimental values for film refractive indices by the Tekucheva method. More exact values are obtained via ellipsometry. The rough Tekucheva values are used to determine the range over which computer calculations interpreting the ellipsometric results must be made. This technique yields accurate values for the film refractive indices.

  15. Biomimetic thin film synthesis

    Energy Technology Data Exchange (ETDEWEB)

    Graff, G.L.; Campbell, A.A.; Gordon, N.R.

    1995-05-01

    The purpose of this program is to develop a new process for forming thin film coatings and to demonstrate that the biomimetic thin film technology developed at PNL is useful for industrial applications. In the biomimetic process, mineral deposition from aqueous solution is controlled by organic functional groups attached to the underlying substrate surface. The coatings process is simple, benign, inexpensive, energy efficient, and particularly suited for temperature sensitive substrate materials (such as polymers). In addition, biomimetic thin films can be deposited uniformly on complex shaped and porous substrates providing a unique capability over more traditional line-of-sight methods.

  16. Effect of substrate on excess electrical conductivity in thin superconducting lead films above the transition temperature

    Energy Technology Data Exchange (ETDEWEB)

    Ashwini Kumar, P K

    1976-03-01

    Measurements were made on Pb films grown directly on to glass and Pb films grown on glass precoated with LiF to investigate the effect of the substrate on thermodynamic fluctuations of Cooper pairs. A change in the substrate appears to alter the strength of the pair breaking mechanism. 17 references.

  17. Mechanical and dielectric characterization of lead zirconate titanate(PZT)/polyurethane(PU) thin film composite for energy harvesting

    Science.gov (United States)

    Aboubakr, S.; Rguiti, M.; Hajjaji, A.; Eddiai, A.; Courtois, C.; d'Astorg, S.

    2014-04-01

    The Lead Zirconate titanate (PZT) ceramic is known by its piezoelectric feature, but also by its stiffness, the use of a composite based on a polyurethane (PU) matrix charged by a piezoelectric material, enable to generate a large deformation of the material, therefore harvesting more energy. This new material will provide a competitive alternative and low cost manufacturing technology of autonomous systems (smart clothes, car seat, boat sail, flag ...). A thin film of the PZT/PU composite was prepared using up to 80 vol. % of ceramic. Due to the dielectric nature of the PZT, inclusions of this one in a PU matrix raises the permittivity of the composite, on other hand this latter seems to decline at high frequencies.

  18. Durability Evaluation of a Thin Film Sensor System With Enhanced Lead Wire Attachments on SiC/SiC Ceramic Matrix Composites

    Science.gov (United States)

    Lei, Jih-Fen; Kiser, J. Douglas; Singh, Mrityunjay; Cuy, Mike; Blaha, Charles A.; Androjna, Drago

    2000-01-01

    An advanced thin film sensor system instrumented on silicon carbide (SiC) fiber reinforced SiC matrix ceramic matrix composites (SiC/SiC CMCs), was evaluated in a Mach 0.3 burner rig in order to determine its durability to monitor material/component surface temperature in harsh environments. The sensor system included thermocouples in a thin film form (5 microns thick), fine lead wires (75 microns diameter), and the bonds between these wires and the thin films. Other critical components of the overall system were the heavy, swaged lead wire cable (500 microns diameter) that contained the fine lead wires and was connected to the temperature readout, and ceramic attachments which were bonded onto the CMCs for the purpose of securing the lead wire cables, The newly developed ceramic attachment features a combination of hoops made of monolithic SiC or SiC/SiC CMC (which are joined to the test article) and high temperature ceramic cement. Two instrumented CMC panels were tested in a burner rig for a total of 40 cycles to 1150 C (2100 F). A cycle consisted of rapid heating to 1150 C (2100 F), a 5 minute hold at 1150 C (2100 F), and then cooling down to room temperature in 2 minutes. The thin film sensor systems provided repeatable temperature measurements for a maximum of 25 thermal cycles. Two of the monolithic SiC hoops debonded during the sensor fabrication process and two of the SiC/SiC CMC hoops failed during testing. The hoops filled with ceramic cement, however, showed no sign of detachment after 40 thermal cycle test. The primary failure mechanism of this sensor system was the loss of the fine lead wire-to-thin film connection, which either due to detachment of the fine lead wires from the thin film thermocouples or breakage of the fine wire.

  19. Thin film device applications

    CERN Document Server

    Kaur, Inderjeet

    1983-01-01

    Two-dimensional materials created ab initio by the process of condensation of atoms, molecules, or ions, called thin films, have unique properties significantly different from the corresponding bulk materials as a result of their physical dimensions, geometry, nonequilibrium microstructure, and metallurgy. Further, these characteristic features of thin films can be drasti­ cally modified and tailored to obtain the desired and required physical characteristics. These features form the basis of development of a host of extraordinary active and passive thin film device applications in the last two decades. On the one extreme, these applications are in the submicron dimensions in such areas as very large scale integration (VLSI), Josephson junction quantum interference devices, magnetic bubbles, and integrated optics. On the other extreme, large-area thin films are being used as selective coatings for solar thermal conversion, solar cells for photovoltaic conver­ sion, and protection and passivating layers. Ind...

  20. Thin film tritium dosimetry

    Science.gov (United States)

    Moran, Paul R.

    1976-01-01

    The present invention provides a method for tritium dosimetry. A dosimeter comprising a thin film of a material having relatively sensitive RITAC-RITAP dosimetry properties is exposed to radiation from tritium, and after the dosimeter has been removed from the source of the radiation, the low energy electron dose deposited in the thin film is determined by radiation-induced, thermally-activated polarization dosimetry techniques.

  1. Polarization recovery in lead zirconate titanate thin films deposited on nanosheets-buffered Si (001

    Directory of Open Access Journals (Sweden)

    Anuj Chopra

    2016-12-01

    Full Text Available Fatigue behavior of Pb(Zr,TiO3 (PZT films is one of the deterrent factors that limits the use of these films in technological applications. Thus, understanding and minimization of the fatigue behavior is highly beneficial for fabricating reliable devices using PZT films. We have investigated the fatigue behavior of preferentially oriented PZT films deposited on nanosheets-buffered Si substrates using LaNiO3 bottom and top electrodes. The films show fatigue of up to 10% at 100 kHz, whereas no fatigue has been observed at 1 MHz. This frequency dependence of the fatigue behavior is found to be in accordance with Dawber–Scott fatigue model that explains the origin of the fatigue as migration of oxygen vacancies. Interestingly, a partial recovery of remnant polarization up to ∼97% of the maximum value is observed after 4×109 cycles which can be further extended to full recovery by increasing the applied electric field. This full recovery is qualitatively explained using kinetic approach as a manifestation of depinning of domains walls. The understanding of the fatigue behavior and polarization recovery that is explained in this paper can be highly useful in developing more reliable PZT devices.

  2. Polarization recovery in lead zirconate titanate thin films deposited on nanosheets-buffered Si (001)

    Science.gov (United States)

    Chopra, Anuj; Bayraktar, Muharrem; Nijland, Maarten; ten Elshof, Johan E.; Bijkerk, Fred; Rijnders, Guus

    2016-12-01

    Fatigue behavior of Pb(Zr,Ti)O3 (PZT) films is one of the deterrent factors that limits the use of these films in technological applications. Thus, understanding and minimization of the fatigue behavior is highly beneficial for fabricating reliable devices using PZT films. We have investigated the fatigue behavior of preferentially oriented PZT films deposited on nanosheets-buffered Si substrates using LaNiO3 bottom and top electrodes. The films show fatigue of up to 10% at 100 kHz, whereas no fatigue has been observed at 1 MHz. This frequency dependence of the fatigue behavior is found to be in accordance with Dawber-Scott fatigue model that explains the origin of the fatigue as migration of oxygen vacancies. Interestingly, a partial recovery of remnant polarization up to ˜97% of the maximum value is observed after 4×109 cycles which can be further extended to full recovery by increasing the applied electric field. This full recovery is qualitatively explained using kinetic approach as a manifestation of depinning of domains walls. The understanding of the fatigue behavior and polarization recovery that is explained in this paper can be highly useful in developing more reliable PZT devices.

  3. Vis-Near-Infrared Photodetectors Based on Methyl Ammonium Lead Iodide Thin Films by Pulsed Laser Deposition

    Science.gov (United States)

    Patel, Nagabhushan; Dias, Sandra; Krupanidhi, S. B.

    2018-04-01

    Organic-inorganic hybrid perovskite materials are considered as promising candidates for emerging thin-film photodetectors. In this work, we discuss the application of the CH3NH3PbI3 thin films by pulsed laser deposition for photodetection applications. With this method, we obtained good perovskite film coverage on fluorine-doped tin oxide-coated substrates and observed wel- developed grains. The films showed no sign of degradation over several months of testing. We investigated the surface morphology and surface roughness of the films by field emission scanning electron microscopy and atomic force microscopy. The optical response of the films was studied using ultraviolet-visible and photoluminescence spectroscopy. We carried out a study on the solar and infrared photodetection of CH3NH3PbI3 thin films. The values of the responsivity, sensitivity, external quantum efficiency and specific detectivity under 1 sun illumination and 0.7 V bias were 105.4 A/W, 1.9, 2.38 × 104% and 1.5 × 1012 Jones, respectively.

  4. Fabrication of Lead-Free Bi0.5Na0.5TiO3 Thin Films by Aqueous Chemical Solution Deposition

    Directory of Open Access Journals (Sweden)

    Mads Christensen

    2017-02-01

    Full Text Available Piezoelectric ceramics are widely used in actuator applications, and currently the vast majority of these devices are based on Pb ( Zr , Ti O 3 , which constitutes environmental and health hazards due to the toxicity of lead. One of the most promising lead-free material systems for actuators is based on Bi 0 . 5 Na 0 . 5 TiO 3 (BNT, and here we report on successful fabrication of BNT thin films by aqueous chemical solution deposition. The precursor solution used in the synthesis is based on bismuth citrate stabilized by ethanolamine, NaOH , and a Ti-citrate prepared from titanium tetraisopropoxide and citric acid. BNT thin films were deposited on SrTiO 3 and platinized silicon substrates by spin-coating, and the films were pyrolized and annealed by rapid thermal processing. The BNT perovskite phase formed after calcination at 500 °C in air. The deposited thin films were single phase according to X-ray diffraction, and the microstructures of the films shown by electron microscopy were homogeneous and dense. Decomposition of the gel was thoroughly investigated, and the conditions resulting in phase pure materials were identified. This new aqueous deposition route is low cost, robust, and suitable for development of BNT based thin film for actuator applications.

  5. Elucidating doping driven microstructure evolution and optical properties of lead sulfide thin films grown from a chemical bath

    Science.gov (United States)

    Mohanty, Bhaskar Chandra; Bector, Keerti; Laha, Ranjit

    2018-03-01

    Doping driven remarkable microstructural evolution of PbS thin films grown by a single-step chemical bath deposition process at 60 °C is reported. The undoped films were discontinuous with octahedral-shaped crystallites after 30 min of deposition, whereas Cu doping led to a distinctly different surface microstructure characterized by densely packed elongated crystallites. A mechanism, based on the time sequence study of microstructural evolution of the films, and detailed XRD and Raman measurements, has been proposed to explain the contrasting microstructure of the doped films. The incorporation of Cu forms an interface layer, which is devoid of Pb. The excess Cu ions in this interface layer at the initial stages of film growth strongly interact and selectively stabilize the charged {111} faces containing either Pb or S compared to the uncharged {100} faces that contain both Pb and S. This interaction interferes with the natural growth habit resulting in the observed surface features of the doped films. Concurrently, the Cu-doping potentially changed the optical properties of the films: A significant widening of the bandgap from 1.52 eV to 1.74 eV for increase in Cu concentration from 0 to 20% was observed, making it a highly potential absorber layer in thin film solar cells.

  6. Amperometric detection and electrochemical oxidation of aliphatic amines and ammonia on silver-lead oxide thin-film electrodes

    Energy Technology Data Exchange (ETDEWEB)

    Ge, Jisheng [Iowa State Univ., Ames, IA (United States)

    1996-01-08

    This thesis comprises three parts: Electrocatalysis of anodic oxygen-transfer reactions: aliphatic amines at mixed Ag-Pb oxide thin-film electrodes; oxidation of ammonia at anodized Ag-Pb eutectic alloy electrodes; and temperature effects on oxidation of ethylamine, alanine, and aquated ammonia.

  7. Thin films and nanomaterials

    International Nuclear Information System (INIS)

    Jayakumar, S.; Kannan, M.D.; Prasanna, S.

    2012-01-01

    The objective of this book is to disseminate the most recent research in Thin Films, Nanomaterials, Corrosion and Metallurgy presented at the International Conference on Advanced Materials (ICAM 2011) held in PSG College of Technology, Coimbatore, India during 12-16 December 2011. The book is a compilation of 113 chapters written by active researchers providing information and critical insights into the recent advancements that have taken place. Important new applications are possible today in the fields of microelectronics, opto-electronics, metallurgy and energy by the application of thin films on solid surfaces. Recent progress in high vacuum technology and new materials has a remarkable effect in thin film quality and cost. This has led to the development of new single or multi-layered thin film devices with diverse applications in a multitude of production areas, such as optics, thermal barrier coatings and wear protections, enhancing service life of tools and to protect materials against thermal and atmospheric influence. On the other hand, thin film process techniques and research are strongly related to the basic research activities in nano technology, an increasingly important field with countless opportunities for applications due to the emergence of new properties at the nanoscale level. Materials and structures that are designed and fabricated at the nano scale level, offer the potential to produce new devices and processes that may enhance efficiencies and reduce costs in many areas, as photovoltaic systems, hydrogen storage, fuel cells and solar thermal systems. In the book, the contributed papers are classified under two sections i) thin films and ii) nanomaterials. The thin film section includes single or multi layer conducting, insulating or semiconducting films synthesized by a wide variety of physical or chemical techniques and characterized or analyzed for different applications. The nanomaterials section deals with novel or exciting materials

  8. The Effect of Substrate Temperature on the Structural Properties of Spray Pyrolysed Lead Sulphide (PbS Thin Films

    Directory of Open Access Journals (Sweden)

    Mohammad G. Faraj

    2014-09-01

    Full Text Available Lead sulphide (PbS films were prepared by the chemical spray pyrolysis technique using a solution of Lead nitrate and thiourea. PbS films were deposited (prepared on glass substrate at varied temperature (250-350 oC. Effects of substrate temperature on the structural characteristics of the films were studied. The X-ray diffraction patterns’ results reveal that the all of PbS films have a face centered cubic structure. The X-ray diffraction study showed that irrespective of substrate temperature all the films exhibits a preferred orientation along the (200 plane. The degree of preferred orientation increased with the substrate temperature. It was observed that the increase of the substrate temperature increase the diffraction peak intensity of (200 plane which resulted in increase in grain size and good crystallinity of the films.

  9. Thin Film Photovoltaics

    Energy Technology Data Exchange (ETDEWEB)

    Zweibel, K.

    1998-11-19

    The motivation to develop thin film technologies dates back to the inception of photovoltaics. It is an idea based on achieving truly low-cost photovoltaics appropriate for mass production and energy significant markets. The key to the idea is the use of pennies worth of active materials. Since sunlight carries relatively little energy in comparison with combustion-based energy sources, photovoltaic (PV) modules must be cheap to produce energy that can be competitive. Thin films are presumed to be the answer to that low-cost requirement. But how cheap do they have to be? The following is an oversimplified analysis that allows some insight into this question.

  10. Thin film ceramic thermocouples

    Science.gov (United States)

    Gregory, Otto (Inventor); Fralick, Gustave (Inventor); Wrbanek, John (Inventor); You, Tao (Inventor)

    2011-01-01

    A thin film ceramic thermocouple (10) having two ceramic thermocouple (12, 14) that are in contact with each other in at least on point to form a junction, and wherein each element was prepared in a different oxygen/nitrogen/argon plasma. Since each element is prepared under different plasma conditions, they have different electrical conductivity and different charge carrier concentration. The thin film thermocouple (10) can be transparent. A versatile ceramic sensor system having an RTD heat flux sensor can be combined with a thermocouple and a strain sensor to yield a multifunctional ceramic sensor array. The transparent ceramic temperature sensor that could ultimately be used for calibration of optical sensors.

  11. Damage-free patterning of ferroelectric lead zirconate titanate thin films for microelectromechanical systems via contact printing

    Science.gov (United States)

    Welsh, Aaron

    This thesis describes the utilization and optimization of the soft lithographic technique, microcontact printing, to additively pattern ferroelectric lead zirconate titanate (PZT) thin films for application in microelectromechanical systems (MEMS). For this purpose, the solution wetting, pattern transfer, printing dynamics, stamp/substrate configurations, and processing damages were optimized for incorporation of PZT thin films into a bio-mass sensor application. This patterning technique transfers liquid ceramic precursors onto a device stack in a desired configuration either through pattern definition in the stamp, substrate or both surfaces. It was determined that for ideal transfer of the pattern from the stamp to the substrate surface, wetting between the solution and the printing surface is paramount. To this end, polyurethane-based stamp surfaces were shown to be wet uniformly by polar solutions. Patterned stamp surfaces revealed that printing from raised features onto flat substrates could be accomplished with a minimum feature size of 5 mum. Films patterned by printing as a function of thickness (0.1 to 1 mum) showed analogous functional properties to continuous films that were not patterned. Specifically, 1 mum thick PZT printed features had a relative permittivity of 1050 +/- 10 and a loss tangent of 2.0 +/- 0.4 % at 10 kHz; remanent polarization was 30 +/- 0.4 muC/cm 2 and the coercive field was 45 +/- 1 kV/cm; and a piezoelectric coefficient e31,f of -7 +/- 0.4 C/m2. No pinching in the minor hysteresis loops or splitting of the first order reversal curve (FORC) distributions was observed. Non-uniform distribution of the solution over the printed area becomes more problematic as feature size is decreased. This resulted in solutions printed from 5 mum wide raised features exhibiting a parabolic shape with sidewall angles of ˜ 1 degree. As an alternative, printing solutions from recesses in the stamp surface resulted in more uniform solution thickness

  12. Thin film metal-oxides

    CERN Document Server

    Ramanathan, Shriram

    2009-01-01

    Presents an account of the fundamental structure-property relations in oxide thin films. This title discusses the functional properties of thin film oxides in the context of applications in the electronics and renewable energy technologies.

  13. Raman analysis of ferroelectric switching in niobium-doped lead zirconate titanate thin films

    International Nuclear Information System (INIS)

    Ferrari, P.; Ramos-Moore, E.; Guitar, M.A.; Cabrera, A.L.

    2014-01-01

    Characteristic Raman vibration modes of niobium-doped lead zirconate titanate (PNZT) are studied as a function of ferroelectric domain switching. The microstructure of PNZT is characterized by scanning electron microscopy and X-ray diffraction. Ferroelectric switching is achieved by applying voltages between the top (Au) and bottom (Pt) electrodes, while acquiring the Raman spectra in situ. Vibrational active modes associated with paraelectric and ferroelectric phases are identified after measuring above and below the ferroelectric Curie temperature, respectively. Changes in the relative intensities of the Raman peaks are observed as a function of the switching voltage. The peak area associated with the ferroelectric modes is analyzed as a function of the applied voltage within one ferroelectric polarization loop, showing local maxima around the coercive voltage. This behavior can be understood in terms of the correlation between vibrational and structural properties, since ferroelectric switching modifies the interaction between the body-centered atom (Zr, Ti or Nb) and the Pb–O lattice. - Highlights: • Electric fields induce structural distortions on ferroelectric perovskites. • Ferroelectric capacitor was fabricated to perform hysteresis loops. • Raman analysis was performed in situ during ferroelectric switching. • Raman modes show hysteresis and inflections around the coercive voltages. • Data can be understood in terms of vibrational–structural correlations

  14. NMR characterization of thin films

    Science.gov (United States)

    Gerald II, Rex E.; Klingler, Robert J.; Rathke, Jerome W.; Diaz, Rocio; Vukovic, Lela

    2010-06-15

    A method, apparatus, and system for characterizing thin film materials. The method, apparatus, and system includes a container for receiving a starting material, applying a gravitational force, a magnetic force, and an electric force or combinations thereof to at least the starting material, forming a thin film material, sensing an NMR signal from the thin film material and analyzing the NMR signal to characterize the thin film of material.

  15. NMR characterization of thin films

    Science.gov (United States)

    Gerald, II, Rex E.; Klingler, Robert J.; Rathke, Jerome W.; Diaz, Rocio; Vukovic, Lela

    2008-11-25

    A method, apparatus, and system for characterizing thin film materials. The method, apparatus, and system includes a container for receiving a starting material, applying a gravitational force, a magnetic force, and an electric force or combinations thereof to at least the starting material, forming a thin film material, sensing an NMR signal from the thin film material and analyzing the NMR signal to characterize the thin film of material.

  16. Rare Earth Oxide Thin Films

    CERN Document Server

    Fanciulli, Marco

    2007-01-01

    Thin rare earth (RE) oxide films are emerging materials for microelectronic, nanoelectronic, and spintronic applications. The state-of-the-art of thin film deposition techniques as well as the structural, physical, chemical, and electrical properties of thin RE oxide films and of their interface with semiconducting substrates are discussed. The aim is to identify proper methodologies for the development of RE oxides thin films and to evaluate their effectiveness as innovative materials in different applications.

  17. Dielectric and ferroelectric properties of strain-relieved epitaxial lead-free KNN-LT-LS ferroelectric thin films on SrTiO3 substrates

    Science.gov (United States)

    Abazari, M.; Akdoǧan, E. K.; Safari, A.

    2008-05-01

    We report the growth of single-phase (K0.44,Na0.52,Li0.04)(Nb0.84,Ta0.10,Sb0.06)O3 thin films on SrRuO3 coated ⟨001⟩ oriented SrTiO3 substrates by using pulsed laser deposition. Films grown at 600°C under low laser fluence exhibit a ⟨001⟩ textured columnar grained nanostructure, which coalesce with increasing deposition temperature, leading to a uniform fully epitaxial highly stoichiometric film at 750°C. However, films deposited at lower temperatures exhibit compositional fluctuations as verified by Rutherford backscattering spectroscopy. The epitaxial films of 400-600nm thickness have a room temperature relative permittivity of ˜750 and a loss tangent of ˜6% at 1kHz. The room temperature remnant polarization of the films is 4μC /cm2, while the saturation polarization is 7.1μC/cm2 at 24kV/cm and the coercive field is ˜7.3kV/cm. The results indicate that approximately 50% of the bulk permittivity and 20% of bulk spontaneous polarization can be retained in submicron epitaxial KNN-LT-LS thin film, respectively. The conductivity of the films remains to be a challenge as evidenced by the high loss tangent, leakage currents, and broad hysteresis loops.

  18. Selective inorganic thin films

    Energy Technology Data Exchange (ETDEWEB)

    Phillips, M.L.F.; Weisenbach, L.A.; Anderson, M.T. [Sandia National Laboratories, Albuquerque, NM (United States)] [and others

    1995-05-01

    This project is developing inorganic thin films as membranes for gas separation applications, and as discriminating coatings for liquid-phase chemical sensors. Our goal is to synthesize these coatings with tailored porosity and surface chemistry on porous substrates and on acoustic and optical sensors. Molecular sieve films offer the possibility of performing separations involving hydrogen, air, and natural gas constituents at elevated temperatures with very high separation factors. We are focusing on improving permeability and molecular sieve properties of crystalline zeolitic membranes made by hydrothermally reacting layered multicomponent sol-gel films deposited on mesoporous substrates. We also used acoustic plate mode (APM) oscillator and surface plasmon resonance (SPR) sensor elements as substrates for sol-gel films, and have both used these modified sensors to determine physical properties of the films and have determined the sensitivity and selectivity of these sensors to aqueous chemical species.

  19. Superconducting thin films

    International Nuclear Information System (INIS)

    Hebard, A.F.; Vandenberg, J.M.

    1982-01-01

    This invention relates to granular metal and metal oxide superconducting films formed by ion beam sputter deposition. Illustratively, the films comprise irregularly shaped, randomly oriented, small lead grains interspersed in an insulating lead oxide matrix. The films are hillock-resistant when subjected to thermal cycling and exhibit unusual josephson-type switching characteristics. Depending on the oxygen content, a film may behave in a manner similar to that of a plurality of series connected josephson junctions, or the film may have a voltage difference in a direction parallel to a major surface of the film that is capable of being switched from zero voltage difference to a finite voltage difference in response to a current larger than the critical current

  20. Thin liquid films dewetting and polymer flow

    CERN Document Server

    Blossey, Ralf

    2012-01-01

    This book is a treatise on the thermodynamic and dynamic properties of thin liquid films at solid surfaces and, in particular, their rupture instabilities. For the quantitative study of these phenomena, polymer thin films haven proven to be an invaluable experimental model system.   What is it that makes thin film instabilities special and interesting, warranting a whole book? There are several answers to this. Firstly, thin polymeric films have an important range of applications, and with the increase in the number of technologies available to produce and to study them, this range is likely to expand. An understanding of their instabilities is therefore of practical relevance for the design of such films.   Secondly, thin liquid films are an interdisciplinary research topic. Interdisciplinary research is surely not an end to itself, but in this case it leads to a fairly heterogeneous community of theoretical and experimental physicists, engineers, physical chemists, mathematicians and others working on the...

  1. Charge carrier recombination channels in the low-temperature phase of organic-inorganic lead halide perovskite thin films

    Science.gov (United States)

    Wehrenfennig, Christian; Liu, Mingzhen; Snaith, Henry J.; Johnston, Michael B.; Herz, Laura M.

    2014-08-01

    The optoelectronic properties of the mixed hybrid lead halide perovskite CH3NH3PbI3-xClx have been subject to numerous recent studies related to its extraordinary capabilities as an absorber material in thin film solar cells. While the greatest part of the current research concentrates on the behavior of the perovskite at room temperature, the observed influence of phonon-coupling and excitonic effects on charge carrier dynamics suggests that low-temperature phenomena can give valuable additional insights into the underlying physics. Here, we present a temperature-dependent study of optical absorption and photoluminescence (PL) emission of vapor-deposited CH3NH3PbI3-xClx exploring the nature of recombination channels in the room- and the low-temperature phase of the material. On cooling, we identify an up-shift of the absorption onset by about 0.1 eV at about 100 K, which is likely to correspond to the known tetragonal-to-orthorhombic transition of the pure halide CH3NH3PbI3. With further decreasing temperature, a second PL emission peak emerges in addition to the peak from the room-temperature phase. The transition on heating is found to occur at about 140 K, i.e., revealing significant hysteresis in the system. While PL decay lifetimes are found to be independent of temperature above the transition, significantly accelerated recombination is observed in the low-temperature phase. Our data suggest that small inclusions of domains adopting the room-temperature phase are responsible for this behavior rather than a spontaneous increase in the intrinsic rate constants. These observations show that even sparse lower-energy sites can have a strong impact on material performance, acting as charge recombination centres that may detrimentally affect photovoltaic performance but that may also prove useful for optoelectronic applications such as lasing by enhancing population inversion.

  2. Charge carrier recombination channels in the low-temperature phase of organic-inorganic lead halide perovskite thin films

    Directory of Open Access Journals (Sweden)

    Christian Wehrenfennig

    2014-08-01

    Full Text Available The optoelectronic properties of the mixed hybrid lead halide perovskite CH3NH3PbI3−xClx have been subject to numerous recent studies related to its extraordinary capabilities as an absorber material in thin film solar cells. While the greatest part of the current research concentrates on the behavior of the perovskite at room temperature, the observed influence of phonon-coupling and excitonic effects on charge carrier dynamics suggests that low-temperature phenomena can give valuable additional insights into the underlying physics. Here, we present a temperature-dependent study of optical absorption and photoluminescence (PL emission of vapor-deposited CH3NH3PbI3−xClx exploring the nature of recombination channels in the room- and the low-temperature phase of the material. On cooling, we identify an up-shift of the absorption onset by about 0.1 eV at about 100 K, which is likely to correspond to the known tetragonal-to-orthorhombic transition of the pure halide CH3NH3PbI3. With further decreasing temperature, a second PL emission peak emerges in addition to the peak from the room-temperature phase. The transition on heating is found to occur at about 140 K, i.e., revealing significant hysteresis in the system. While PL decay lifetimes are found to be independent of temperature above the transition, significantly accelerated recombination is observed in the low-temperature phase. Our data suggest that small inclusions of domains adopting the room-temperature phase are responsible for this behavior rather than a spontaneous increase in the intrinsic rate constants. These observations show that even sparse lower-energy sites can have a strong impact on material performance, acting as charge recombination centres that may detrimentally affect photovoltaic performance but that may also prove useful for optoelectronic applications such as lasing by enhancing population inversion.

  3. Superconducting oxypnictide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Reisner, Andreas; Kidszun, Martin; Reich, Elke; Holzapfel, Bernhard; Schultz, Ludwig; Haindl, Silvia [IFW Dresden, Institute of Metallic Materials (Germany); Thersleff, Thomas [Uppsala University, Angstrom Laboratory (Sweden)

    2012-07-01

    We present an overview on the oxypnictide thin film preparation. So far, only LaAlO{sub 3} (001) single crystalline substrates provided a successful growth using pulsed laser deposition in combination with a post annealing process. Further experiments on the in-situ deposition will be reported. The structure of the films was investigated by X-ray diffractometry and transmission electron microscopy. Transport properties were measured with different applied fields to obtain a magnetic phase diagram for this new type of superconductor.

  4. Mechanics of Thin Films

    Science.gov (United States)

    1992-02-06

    and the second geometry was that of squat cylinders (diameter 6.4 mm, height 6.4 mm). These two geometries were tested in thermal shock tests, and a...milder [13]. More recently, Lau, Rahman and stressa nce ntrati, tha n films of lmalla rat ve spc Delale calculated the free edge singularity for stress...thickness of 3 mm); the second geometry was that As an example of the shielding effect of thin films, we of squat cylinders (diameter 6.4 mm, height 6.4

  5. Thin film processes

    CERN Document Server

    Vossen, John L

    1978-01-01

    Remarkable advances have been made in recent years in the science and technology of thin film processes for deposition and etching. It is the purpose of this book to bring together tutorial reviews of selected filmdeposition and etching processes from a process viewpoint. Emphasis is placed on the practical use of the processes to provide working guidelines for their implementation, a guide to the literature, and an overview of each process.

  6. Comparative microstructure and electrical property studies of lead scandium tantalate thin films as prepared by LDCVD, sol-gel and sputtering techniques

    International Nuclear Information System (INIS)

    Huang, Z; Donohue, P P; Zhang, Q; Williams, D J; Anthony, C J; Whatmore, R W; Todd, M A

    2003-01-01

    Lead scandium tantalate (PST) thin films for uncooled infrared (IR) detector applications have been deposited by liquid delivery chemical vapour deposition (LDCVD), sputtering and sol-gel techniques. The sol-gel and sputtered films were deposited at low temperature into a non-ferroelectric phase with the required perovskite structure being formed using a high temperature rapid thermal anneal (RTA). In contrast to this, the LDCVD films were deposited at high temperature directly into the perovskite phase but were found to still require a high temperature RTA step to optimize their merit for IR detection. Detailed structural and electrical characterization of the PST films deposited by these different methods have revealed that there is no simple relationship between microstructure and electrical properties. The sol-gel and LDCVD techniques produce thin films with excellent microstructures, as determined by x-ray diffraction analysis and transmission electron microscopy, but inferior electrical properties and relatively low merit figures. By contrast, the sputtered and then rapid thermal annealed films have inferior microstructures, characterized by extensive voiding, but excellent electrical properties and high merit figures

  7. Handbook of thin film technology

    CERN Document Server

    Frey, Hartmut

    2015-01-01

    “Handbook of Thin Film Technology” covers all aspects of coatings preparation, characterization and applications. Different deposition techniques based on vacuum and plasma processes are presented. Methods of surface and thin film analysis including coating thickness, structural, optical, electrical, mechanical and magnetic properties of films are detailed described. The several applications of thin coatings and a special chapter focusing on nanoparticle-based films can be found in this handbook. A complete reference for students and professionals interested in the science and technology of thin films.

  8. Effect of deposition temperature on the structural, morphological and optical band gap of lead selenide thin films synthesized by chemical bath deposition method

    Energy Technology Data Exchange (ETDEWEB)

    Hone, Fekadu Gashaw, E-mail: fekeye@gmail.com [Hawassa University, Department of Physics, Hawassa (Ethiopia); Ampong, Francis Kofi [Kwame Nkrumah University of Science and Technology, Department of Physics, Kumasi (Ghana)

    2016-11-01

    Lead selenide (PbSe) nanocrystalline thin films have been deposited on silica glass substrates by the chemical bath deposition technique. The samples were deposited at the bath temperatures of 60, 75 and 90 °C respectively and characterized by a variety of techniques. The XRD results revealed that the PbSe thin film deposited at 60 °C was amorphous in nature. Films deposited at higher temperatures exhibited sharp and intense diffraction peaks, indicating an improvement in crystallinety. The deposition temperature also had a strong influence on the preferred orientation of the crystallites as well as other structural parameters such as microstrain and dislocation density. From the SEM study it was observed that film deposited at 90 °C had well defined crystallites, uniformly distributed over the entire surface of the substrate. The EDAX study confirmed that the samples deposited at the higher temperature had a better stoichiometric ratio. The optical band gap varied from 2.26 eV to 1.13 eV with increasing deposition temperature. - Highlights: • The crystallinety of the films improved as the deposition temperature increased. • The deposition temperature strongly influenced the preferred orientations. • Microstrain and dislocation density are decreased linearly with deposition temperature. • Band gap decreased from 2.26 eV to 1.13 eV as the deposition temperature increased.

  9. Thin films for precision optics

    International Nuclear Information System (INIS)

    Araujo, J.F.; Maurici, N.; Castro, J.C. de

    1983-01-01

    The technology of producing dielectric and/or metallic thin films for high precision optical components is discussed. Computer programs were developed in order to calculate and register, graphically, reflectance and transmittance spectra of multi-layer films. The technology of vacuum evaporation of several materials was implemented in our thin-films laboratory; various films for optics were then developed. The possibility of first calculate film characteristics and then produce the film is of great advantage since it reduces the time required to produce a new type of film and also reduces the cost of the project. (C.L.B.) [pt

  10. Microstructure of Thin Films

    Science.gov (United States)

    1990-02-07

    Proceedings, Thin film Technologies II, 652, 256-263, (1986) B. Schmitt, J.P. Borgogno, G. Albrand and E. Pelletier, "In situ and air index measurements...34 SPIE Proceedings, "Optical Components and Systems", 805, 128 (1987) 11 B. Schmitt, J.P. Borgogno, G. Albrand and E. Pelletier. "In situ and air index...aT , m..a, lot,, o ,,f,02,d I4 k -1-1..... autocovariance lengths, less than 0.5 um, indicate that , 514n, ob0 o p’,Ofclllc....,,o,,oy0,1- agua sblrt

  11. Host thin films incorporating nanoparticles

    Science.gov (United States)

    Qureshi, Uzma

    The focus of this research project was the investigation of the functional properties of thin films that incorporate a secondary nanoparticulate phase. In particular to assess if the secondary nanoparticulate material enhanced a functional property of the coating on glass. In order to achieve this, new thin film deposition methods were developed, namely use of nanopowder precursors, an aerosol assisted transport technique and an aerosol into atmospheric pressure chemical vapour deposition system. Aerosol assisted chemical vapour deposition (AACVD) was used to deposit 8 series of thin films on glass. Five different nanoparticles silver, gold, ceria, tungsten oxide and zinc oxide were tested and shown to successfully deposit thin films incorporating nanoparticles within a host matrix. Silver nanoparticles were synthesised and doped within a titania film by AACVD. This improved solar control properties. A unique aerosol assisted chemical vapour deposition (AACVD) into atmospheric pressure chemical vapour deposition (APCVD) system was used to deposit films of Au nanoparticles and thin films of gold nanoparticles incorporated within a host titania matrix. Incorporation of high refractive index contrast metal oxide particles within a host film altered the film colour. The key goal was to test the potential of nanopowder forms and transfer the suspended nanopowder via an aerosol to a substrate in order to deposit a thin film. Discrete tungsten oxide nanoparticles or ceria nanoparticles within a titanium dioxide thin film enhanced the self-cleaning and photo-induced super-hydrophilicity. The nanopowder precursor study was extended by deposition of zinc oxide thin films incorporating Au nanoparticles and also ZnO films deposited from a ZnO nanopowder precursor. Incorporation of Au nanoparticles within a VO: host matrix improved the thermochromic response, optical and colour properties. Composite VC/TiC and Au nanoparticle/V02/Ti02 thin films displayed three useful

  12. Thin-film photovoltaic technology

    Energy Technology Data Exchange (ETDEWEB)

    Bhattacharya, R.N. [National Renewable Energy Laboratory, Golden, CO (United States)

    2010-07-01

    The high material and processing costs associated with single-crystal and polycrystalline silicon wafers that are commonly used in photovoltaic cells render these modules expensive. This presentation described thin-film solar cell technology as a promising alternative to silicon solar cell technology. Cadmium telluride (CdTe) thin films along with copper, indium, gallium, and selenium (CIGS) thin films have become the leaders in this field. Their large optical absorption coefficient can be attributed to a direct energy gap that allows the use of thin layers (1-2 {mu}m) of active material. The efficiency of thin-film solar cell devices based on CIGS is 20 per cent, compared to 16.7 per cent for thin-film solar cell devices based on CdTe. IBM recently reported an efficiency of 9.7 per cent for a new type of inorganic thin-film solar cell based on a Cu{sub 2}ZnSn(S, Se){sub 4} compound. The efficiency of an organic thin-film solar cell is 7.9 per cent. This presentation included a graph of PV device efficiencies and discussed technological advances in non-vacuum deposited, CIGS-based thin-film solar cells. 1 fig.

  13. Polymer Thin Film Stabilization.

    Science.gov (United States)

    Costa, A. C.; Oslanec, R.; Composto, R. J.; Vlcek, P.

    1998-03-01

    We study the dewetting dynamics of thin polystyrene (PS) films deposited on silicon oxide surfaces using optical (OM) and atomic force (AFM) microscopes. Quantitative analysis of the hole diameter as a function of annealing time at 175^oC shows that blending poly(styrene-block-methyl-methacrylate) (PS-b-PMMA) with PS acts to dramatically slow down the dewetting rate and even stops holes growth before they impinge. AFM studies show that the hole floor is smooth for a pure PS film but contains residual polymer for the blend. At 5% vol., a PS-b-PMMA with high molar mass and low PMMA is a more effective stabilizing agent than a low molar mass/high PMMA additive. The optimum copolymer concentration is 3% vol. beyond which film stability doesn't improve. Although dewetting is slowed down relative to pure PS, PS/PS-b-PMMA bilayers dewet at a faster rate than blends having the same overall additive concentration.

  14. Thin films: Past, present, future

    Energy Technology Data Exchange (ETDEWEB)

    Zweibel, K

    1995-04-01

    This report describes the characteristics of the thin film photovoltaic modules necessary for an acceptable rate of return for rural areas and underdeveloped countries. The topics of the paper include a development of goals of cost and performance for an acceptable PV system, a review of current technologies for meeting these goals, issues and opportunities in thin film technologies.

  15. Thin-film solar cell

    NARCIS (Netherlands)

    Metselaar, J.W.; Kuznetsov, V.I.

    1998-01-01

    The invention relates to a thin-film solar cell provided with at least one p-i-n junction comprising at least one p-i junction which is at an angle alpha with that surface of the thin-film solar cell which collects light during operation and at least one i-n junction which is at an angle beta with

  16. Thin-film solar cells

    International Nuclear Information System (INIS)

    Aberle, Armin G.

    2009-01-01

    The rapid progress that is being made with inorganic thin-film photovoltaic (PV) technologies, both in the laboratory and in industry, is reviewed. While amorphous silicon based PV modules have been around for more than 20 years, recent industrial developments include the first polycrystalline silicon thin-film solar cells on glass and the first tandem solar cells based on stacks of amorphous and microcrystalline silicon films ('micromorph cells'). Significant thin-film PV production levels are also being set up for cadmium telluride and copper indium diselenide.

  17. Effects of Solution-Based Fabrication Conditions on Morphology of Lead Halide Perovskite Thin Film Solar Cells

    Directory of Open Access Journals (Sweden)

    Jeremy L. Barnett

    2016-01-01

    Full Text Available We present a critical review of the effects of processing conditions on the morphology of methylammonium lead iodide (CH3NH3PbI3 perovskite solar cells. Though difficult to decouple from synthetic and film formation effects, a single morphological feature, specifically grain size, has been evidently linked to the photovoltaic performance of this class of solar cells. Herein, we discuss experimental aspects of optimizing the (a temperature and time of annealing, (b spin-coating parameters, and (c solution temperature of methylammonium iodide (MAI solution.

  18. Leakage current behavior in lead-free ferroelectric (K,Na)NbO3-LiTaO3-LiSbO3 thin films

    Science.gov (United States)

    Abazari, M.; Safari, A.

    2010-12-01

    Conduction mechanisms in epitaxial (001)-oriented pure and 1 mol % Mn-doped (K0.44,Na0.52,Li0.04)(Nb0.84,Ta0.1,Sb0.06)O3 (KNN-LT-LS) thin films on SrTiO3 substrate were investigated. Temperature dependence of leakage current density was measured as a function of applied electric field in the range of 200-380 K. It was shown that the different transport mechanisms dominate in pure and Mn-doped thin films. In pure (KNN-LT-LS) thin films, Poole-Frenkel emission was found to be responsible for the leakage, while Schottky emission was the dominant mechanism in Mn-doped thin films at higher electric fields. This is a remarkable yet clear indication of effect of 1 mol % Mn on the resistive behavior of such thin films.

  19. Thermal conductivity model for nanoporous thin films

    Science.gov (United States)

    Huang, Congliang; Zhao, Xinpeng; Regner, Keith; Yang, Ronggui

    2018-03-01

    Nanoporous thin films have attracted great interest because of their extremely low thermal conductivity and potential applications in thin thermal insulators and thermoelectrics. Although there are some numerical and experimental studies about the thermal conductivity of nanoporous thin films, a simplified model is still needed to provide a straightforward prediction. In this paper, by including the phonon scattering lifetimes due to film thickness boundary scattering, nanopore scattering and the frequency-dependent intrinsic phonon-phonon scattering, a fitting-parameter-free model based on the kinetic theory of phonon transport is developed to predict both the in-plane and the cross-plane thermal conductivities of nanoporous thin films. With input parameters such as the lattice constants, thermal conductivity, and the group velocity of acoustic phonons of bulk silicon, our model shows a good agreement with available experimental and numerical results of nanoporous silicon thin films. It illustrates that the size effect of film thickness boundary scattering not only depends on the film thickness but also on the size of nanopores, and a larger nanopore leads to a stronger size effect of the film thickness. Our model also reveals that there are different optimal structures for getting the lowest in-plane and cross-plane thermal conductivities.

  20. Combined micro-droplet and thin-film-assisted pre-concentration of lead traces for on-line monitoring using anodic stripping voltammetry.

    Science.gov (United States)

    Belostotsky, Inessa; Gridin, Vladimir V; Schechter, Israel; Yarnitzky, Chaim N

    2003-02-01

    An improved analytical method for airborne lead traces is reported. It is based on using a Venturi scrubber sampling device for simultaneous thin-film stripping and droplet entrapment of aerosol influxes. At least threefold enhancement of the lead-trace pre-concentration is achieved. The sampled traces are analyzed by square-wave anodic stripping voltammetry. The method was tested by a series of pilot experiments. These were performed using contaminant-controlled air intakes. Reproducible calibration plots were obtained. The data were validated by traditional analysis using filter sampling. LODs are comparable with the conventional techniques. The method was successfully applied to on-line and in situ environmental monitoring of lead.

  1. Combined micro-droplet and thin-film-assisted pre-concentration of lead traces for on-line monitoring using anodic stripping voltammetry

    Energy Technology Data Exchange (ETDEWEB)

    Belostotsky, Inessa; Gridin, Vladimir V.; Schechter, Israel; Yarnitzky, Chaim N. [Department of Chemistry, Technion Israel Institute of Technology, 32000, Haifa (Israel)

    2003-02-01

    An improved analytical method for airborne lead traces is reported. It is based on using a Venturi scrubber sampling device for simultaneous thin-film stripping and droplet entrapment of aerosol influxes. At least threefold enhancement of the lead-trace pre-concentration is achieved. The sampled traces are analyzed by square-wave anodic stripping voltammetry. The method was tested by a series of pilot experiments. These were performed using contaminant-controlled air intakes. Reproducible calibration plots were obtained. The data were validated by traditional analysis using filter sampling. LODs are comparable with the conventional techniques. The method was successfully applied to on-line and in situ environmental monitoring of lead. (orig.)

  2. Thin film bismuth iron oxides useful for piezoelectric devices

    Science.gov (United States)

    Zeches, Robert J.; Martin, Lane W.; Ramesh, Ramamoorthy

    2016-05-31

    The present invention provides for a composition comprising a thin film of BiFeO.sub.3 having a thickness ranging from 20 nm to 300 nm, a first electrode in contact with the BiFeO.sub.3 thin film, and a second electrode in contact with the BiFeO.sub.3 thin film; wherein the first and second electrodes are in electrical communication. The composition is free or essentially free of lead (Pb). The BFO thin film is has the piezoelectric property of changing its volume and/or shape when an electric field is applied to the BFO thin film.

  3. Characterization of organic thin films

    CERN Document Server

    Ulman, Abraham; Evans, Charles A

    2009-01-01

    Thin films based upon organic materials are at the heart of much of the revolution in modern technology, from advanced electronics, to optics to sensors to biomedical engineering. This volume in the Materials Characterization series introduces the major common types of analysis used in characterizing of thin films and the various appropriate characterization technologies for each. Materials such as Langmuir-Blodgett films and self-assembled monolayers are first introduced, followed by analysis of surface properties and the various characterization technologies used for such. Readers will find detailed information on: -Various spectroscopic approaches to characterization of organic thin films, including infrared spectroscopy and Raman spectroscopy -X-Ray diffraction techniques, High Resolution EELS studies, and X-Ray Photoelectron Spectroscopy -Concise Summaries of major characterization technologies for organic thin films, including Auger Electron Spectroscopy, Dynamic Secondary Ion Mass Spectrometry, and Tra...

  4. Lead iodide perovskite sensitized all-solid-state submicron thin film mesoscopic solar cell with efficiency exceeding 9%.

    KAUST Repository

    Kim, Hui-Seon; Lee, Chang-Ryul; Im, Jeong-Hyeok; Lee, Ki-Beom; Moehl, Thomas; Marchioro, Arianna; Moon, Soo-Jin; Humphry-Baker, Robin; Yum, Jun-Ho; Moser, Jacques E; Grä tzel, Michael; Park, Nam-Gyu

    2012-01-01

    We report on solid-state mesoscopic heterojunction solar cells employing nanoparticles (NPs) of methyl ammonium lead iodide (CH(3)NH(3))PbI(3) as light harvesters. The perovskite NPs were produced by reaction of methylammonium iodide with PbI(2) and deposited onto a submicron-thick mesoscopic TiO(2) film, whose pores were infiltrated with the hole-conductor spiro-MeOTAD. Illumination with standard AM-1.5 sunlight generated large photocurrents (J(SC)) exceeding 17 mA/cm(2), an open circuit photovoltage (V(OC)) of 0.888 V and a fill factor (FF) of 0.62 yielding a power conversion efficiency (PCE) of 9.7%, the highest reported to date for such cells. Femto second laser studies combined with photo-induced absorption measurements showed charge separation to proceed via hole injection from the excited (CH(3)NH(3))PbI(3) NPs into the spiro-MeOTAD followed by electron transfer to the mesoscopic TiO(2) film. The use of a solid hole conductor dramatically improved the device stability compared to (CH(3)NH(3))PbI(3) -sensitized liquid junction cells.

  5. Lead iodide perovskite sensitized all-solid-state submicron thin film mesoscopic solar cell with efficiency exceeding 9%.

    KAUST Repository

    Kim, Hui-Seon

    2012-08-21

    We report on solid-state mesoscopic heterojunction solar cells employing nanoparticles (NPs) of methyl ammonium lead iodide (CH(3)NH(3))PbI(3) as light harvesters. The perovskite NPs were produced by reaction of methylammonium iodide with PbI(2) and deposited onto a submicron-thick mesoscopic TiO(2) film, whose pores were infiltrated with the hole-conductor spiro-MeOTAD. Illumination with standard AM-1.5 sunlight generated large photocurrents (J(SC)) exceeding 17 mA/cm(2), an open circuit photovoltage (V(OC)) of 0.888 V and a fill factor (FF) of 0.62 yielding a power conversion efficiency (PCE) of 9.7%, the highest reported to date for such cells. Femto second laser studies combined with photo-induced absorption measurements showed charge separation to proceed via hole injection from the excited (CH(3)NH(3))PbI(3) NPs into the spiro-MeOTAD followed by electron transfer to the mesoscopic TiO(2) film. The use of a solid hole conductor dramatically improved the device stability compared to (CH(3)NH(3))PbI(3) -sensitized liquid junction cells.

  6. Lead Iodide Perovskite Sensitized All-Solid-State Submicron Thin Film Mesoscopic Solar Cell with Efficiency Exceeding 9%

    Science.gov (United States)

    Kim, Hui-Seon; Lee, Chang-Ryul; Im, Jeong-Hyeok; Lee, Ki-Beom; Moehl, Thomas; Marchioro, Arianna; Moon, Soo-Jin; Humphry-Baker, Robin; Yum, Jun-Ho; Moser, Jacques E.; Grätzel, Michael; Park, Nam-Gyu

    2012-01-01

    We report on solid-state mesoscopic heterojunction solar cells employing nanoparticles (NPs) of methyl ammonium lead iodide (CH3NH3)PbI3 as light harvesters. The perovskite NPs were produced by reaction of methylammonium iodide with PbI2 and deposited onto a submicron-thick mesoscopic TiO2 film, whose pores were infiltrated with the hole-conductor spiro-MeOTAD. Illumination with standard AM-1.5 sunlight generated large photocurrents (JSC) exceeding 17 mA/cm2, an open circuit photovoltage (VOC) of 0.888 V and a fill factor (FF) of 0.62 yielding a power conversion efficiency (PCE) of 9.7%, the highest reported to date for such cells. Femto second laser studies combined with photo-induced absorption measurements showed charge separation to proceed via hole injection from the excited (CH3NH3)PbI3 NPs into the spiro-MeOTAD followed by electron transfer to the mesoscopic TiO2 film. The use of a solid hole conductor dramatically improved the device stability compared to (CH3NH3)PbI3 -sensitized liquid junction cells. PMID:22912919

  7. Interfaces and thin films physics

    International Nuclear Information System (INIS)

    Equer, B.

    1988-01-01

    The 1988 progress report of the Interfaces and Thin Film Physics laboratory (Polytechnic School France) is presented. The research program is focused on the thin films and on the interfaces of the amorphous semiconductor materials: silicon and silicon germanium, silicon-carbon and silicon-nitrogen alloys. In particular, the following topics are discussed: the basic processes and the kinetics of the reactive gas deposition, the amorphous materials manufacturing, the physico-chemical characterization of thin films and interfaces and the electron transport in amorphous semiconductors. The construction and optimization of experimental devices, as well as the activities concerning instrumentation, are also described [fr

  8. Optical studies on Zn-doped lead chalcogenide (PbSe){sub 100−x}Zn{sub x} thin films composed of nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    Ashraf, Md. Tanweer [Department of Applied Sciences and Humanities, Jamia Millia Islamia (JMI), New Delhi-25 (India); Salah, Numan A. [Center of Nanotechnology, King Abdulaziz University, Jeddah (Saudi Arabia); Rafat, M. [Department of Applied Sciences and Humanities, Jamia Millia Islamia (JMI), New Delhi-25 (India); Zulfequar, M. [Department of Physics, Jamia Millia Islamia, New Delhi-25 (India); Khan, Zishan H., E-mail: zishan_hk@yahoo.co.in [Department of Applied Sciences and Humanities, Jamia Millia Islamia (JMI), New Delhi-25 (India)

    2016-08-01

    The effect of laser-Irradiation on the optical properties of Zn-doped PbSe thin films composed of nanoparticles has been studied. Scanning electron microscope (SEM) investigations suggest the formation of nanoparticles of average size of 50 nm for all the studied Zn compositions. XRD studies show that the as-prepared thin films are polycrystalline in nature. The formation of nanoparticles of Zn-doped PbSe has been confirmed by indexing the crystal planes as observed in the XRD spectra. The addition of Zn in (PbSe){sub 100−x}Zn{sub x} thin films result in the blue shift in photoluminescence spectra, this blue shift is associated with the narrowing of the band gap. Optical absorption measurements reveal a direct band gap for the present samples, which decreases on increasing the Zn content. The same trend has also been observed for the samples irradiated with laser. Further, the calculated values of Urbach energy are found to increase with the increase in Zn contents for the as-prepared as well as laser-irradiated samples. All the above observations agree well with the results of optical band gap and suggest that the decrease in band gap may be due to increase in band tails, defects and particle size. - Highlights: • Nanoparticles of Zn doped (PbSe){sub 100−x}Zn{sub x} lead chalcogenides have been synthesized. • Effect of laser irradiation on optical properties of (PbSe){sub 100−x}Zn{sub x} has been studied. • A blue shift in PL spectra is obtained on Zn incorporation.

  9. The direct determination, by differential pulse anodic-stripping voltammetry at the thin mercury-film electrode, of cadmium, lead and copper

    International Nuclear Information System (INIS)

    Lee, A.F.

    1981-01-01

    This report describes the development and application of a voltammetric procedure for the direct, simultaneous determination of cadmium, lead, and copper in three SAROC reference materials (carbonatite, magnesite, and quartz). The electrolyte was a mixture of 1 M ammonium chloride, 0,1 M citric acid, and 0,025 M ascorbic acid. No interferences were encountered from Fe(III), As(III), Sb(V), Tl(I), or In(III) at the concentrations present in the samples. Intermetallic interferences were eliminated by the use of thin mercury-film electrodes not less than 80nm thick. Limits of detection were determined by the degree to which the supporting electrolyte could be purified, and were estimated to be 10ng/g, 250ng/g, and 150ng/g for cadmium, lead, and copper respectively

  10. Thin-Film Power Transformers

    Science.gov (United States)

    Katti, Romney R.

    1995-01-01

    Transformer core made of thin layers of insulating material interspersed with thin layers of ferromagnetic material. Flux-linking conductors made of thinner nonferromagnetic-conductor/insulator multilayers wrapped around core. Transformers have geometric features finer than those of transformers made in customary way by machining and mechanical pressing. In addition, some thin-film materials exhibit magnetic-flux-carrying capabilities superior to those of customary bulk transformer materials. Suitable for low-cost, high-yield mass production.

  11. MATERIAL AND PROCESS DEVELOPMENT LEADING TO ECONOMICAL HIGH-PERFORMANCE THIN-FILM SOLID OXIDE FUEL CELLS. Final Technical Report (October 2000 - December 2003)

    International Nuclear Information System (INIS)

    Jie Guan; Nguyen Minh

    2003-01-01

    This report summarizes the results of the work conducted under the program: ''Material and Process Development Leading to Economical High-Performance Thin-Film Solid Oxide Fuel Cells'' under contract number DE-AC26-00NT40711. The program goal is to advance materials and processes that can be used to produce economical, high-performance solid oxide fuel cells (SOFC) capable of achieving extraordinary high power densities at reduced temperatures. Under this program, anode-supported thin electrolyte based on lanthanum gallate (LSMGF) has been developed using tape-calendering process. The fabrication parameters such as raw materials characteristics, tape formulations and sintering conditions have been evaluated. Dense anode supported LSGMF electrolytes with thickness range of 10-50 micron have been fabricated. High performance cathode based on Sr 0.5 Sm 0.5 CoO 3 (SSC) has been developed. Polarization of ∼0.23 ohm-cm 2 has been achieved at 600 C with Sr 0.5 Sm 0.5 CoO 3 cathode. The high-performance SSC cathode and thin gallate electrolyte have been integrated into single cells and cell performance has been characterized. Tested cells to date generally showed low performance because of low cell OCVs and material interactions between NiO in the anode and lanthanum gallate electrolyte

  12. Ferroelectric and piezoelectric properties of lead-free BaTiO{sub 3} doped Bi{sub 0.5}Na{sub 0.5}TiO{sub 3} thin films from metal-organic solution deposition

    Energy Technology Data Exchange (ETDEWEB)

    Acharya, Susant Kumar [Division of Advanced Materials Engineering, Hydrogen and Fuel Cell Research Center, Chonbuk National University, Jeonju 561-756 (Korea, Republic of); Department of Semiconductor Science and Technology, Basic Research Laboratory (BRL), Semiconductor Physics Research Center (SPRC), Chonbuk National University, Jeonju 561-756 (Korea, Republic of); Lee, Sang-Kwon; Hyung, Jung-Hwan [Department of Semiconductor Science and Technology, Basic Research Laboratory (BRL), Semiconductor Physics Research Center (SPRC), Chonbuk National University, Jeonju 561-756 (Korea, Republic of); Yang, Yun-Ho; Kim, Bok-Hee [Division of Advanced Materials Engineering, Hydrogen and Fuel Cell Research Center, Chonbuk National University, Jeonju 561-756 (Korea, Republic of); Ahn, Byung-Guk, E-mail: bkahn@jbnu.ac.kr [Division of Advanced Materials Engineering, Hydrogen and Fuel Cell Research Center, Chonbuk National University, Jeonju 561-756 (Korea, Republic of)

    2012-11-05

    Highlights: Black-Right-Pointing-Pointer Lead-free BNT-BT thin films from an optimized metal-organic solution deposition. Black-Right-Pointing-Pointer Phase and microstructure evolution with annealing temperature. Black-Right-Pointing-Pointer A relatively low leakage current density. Black-Right-Pointing-Pointer Good dielectric constant of 613 at a frequency of 1 kHz. Black-Right-Pointing-Pointer High remanent polarization and piezoelectric constant comparable to PZT thin films. - Abstract: Lead-free 0.94Bi{sub 0.5}Na{sub 0.5}TiO{sub 3}-0.06BaTiO{sub 3} (BNT-BT) piezoelectric thin films were prepared by metal-organic solution deposition onto a Pt/Ti/SiO{sub 2}/Si substrate. A dense and well crystallized thin film with a perovskite phase was obtained by annealing these films at 700 Degree-Sign C. Atomic force microscopy showed that these films were smooth and crack-free with an average grain size on the order of 200 nm. Thin films of 356 nm thickness exhibited a small signal dielectric constant and a loss tangent at 1 kHz of 613 and 0.044, respectively. Ferroelectric hysteresis measurements indicated a remanent polarization value of 21.5 {mu}C/cm{sup 2} with a coercive field of 164.5 kV/cm. The leakage current density of the thin film was 4.08 Multiplication-Sign 10{sup -4} A/cm{sup 2} at an applied electric field of 200 kV/cm. A typical butterfly-shaped piezoresponse loop was observed and the effective piezoelectric coefficient (d{sub 33}) of the BNT-BT thin film was approximately 51.6 pm/V.

  13. Size effects in thin films

    CERN Document Server

    Tellier, CR; Siddall, G

    1982-01-01

    A complete and comprehensive study of transport phenomena in thin continuous metal films, this book reviews work carried out on external-surface and grain-boundary electron scattering and proposes new theoretical equations for transport properties of these films. It presents a complete theoretical view of the field, and considers imperfection and impurity effects.

  14. Tailored piezoelectric thin films for energy harvester

    NARCIS (Netherlands)

    Wan, X.

    2013-01-01

    Piezoelectric materials are excellent materials to transfer mechanical energy into electrical energy, which can be stored and used to power other devices. PiezoMEMS is a good way to combine silicon wafer processing and piezoelectric thin film technology and lead to a variety of miniaturized and

  15. Influence of PbCl2 content in PbI2 solution of DMF on the absorption, crystal phase, morphology of lead halide thin films and photovoltaic performance in planar perovskite solar cells

    International Nuclear Information System (INIS)

    Wang, Mao; Shi, Chengwu; Zhang, Jincheng; Wu, Ni; Ying, Chao

    2015-01-01

    In this paper, the influence of PbCl 2 content in PbI 2 solution of DMF on the absorption, crystal phase and morphology of lead halide thin films was systematically investigated and the photovoltaic performance of the corresponding planar perovskite solar cells was evaluated. The result revealed that the various thickness lead halide thin film with the small sheet-like, porous morphology and low crystallinity can be produced by adding PbCl 2 powder into PbI 2 solution of DMF as a precursor solution. The planar perovskite solar cell based on the 300-nm-thick CH 3 NH 3 PbI 3−x Cl x thin film by the precursor solution with the mixture of 0.80 M PbI 2 and 0.20 M PbCl 2 exhibited the optimum photoelectric conversion efficiency of 10.12% along with an open-circuit voltage of 0.93 V, a short-circuit photocurrent density of 15.70 mA cm −2 and a fill factor of 0.69. - Graphical abstract: The figure showed the surface and cross-sectional SEM images of lead halide thin films using the precursor solutions: (a) 0.80 M PbI 2 , (b) 0.80 M PbI 2 +0.20 M PbCl 2 , (c) 0.80 M PbI 2 +0.40 M PbCl 2 , and (d) 0.80 M PbI 2 +0.60 M PbCl 2 . With the increase of the PbCl 2 content in precursor solution, the size of the lead halide nanosheet decreased and the corresponding thin films gradually turned to be porous with low crystallinity. - Highlights: • Influence of PbCl 2 content on absorption, crystal phase and morphology of thin film. • Influence of perovskite film thickness on photovoltaic performance of solar cell. • Lead halide thin film with small sheet-like, porous morphology and low crystallinity. • Planar solar cell with 300 nm-thick perovskite thin film achieved PCE of 10.12%.

  16. Research Leading to High Throughput Processing of Thin-Film CdTe PV Module: Phase I Annual Report, October 2003 (Revised)

    Energy Technology Data Exchange (ETDEWEB)

    Powell, R. C.; Meyers, P. V.

    2004-02-01

    Work under this subcontract contributes to the overall manufacturing operation. During Phase I, average module efficiency on the line was improved from 7.1% to 7.9%, due primarily to increased photocurrent resulting from a decrease in CdS thickness. At the same time, production volume for commercial sale increased from 1.5 to 2.5 MW/yr. First Solar is committed to commercializing CdTe-based thin-film photovoltaics. This commercialization effort includes a major addition of floor space and equipment, as well as process improvements to achieve higher efficiency and greater durability. This report presents the results of Phase I of the subcontract entitled''Research Leading to High Throughput Processing of Thin-Film CdTe PV Modules.'' The subcontract supports several important aspects needed to begin high-volume manufacturing, including further development of the semiconductor deposition reactor, advancement of accelerated life testing methods and understanding, and improvements to th e environmental, health, and safety programs. Progress in the development of the semiconductor deposition reactor was made in several areas. First, a new style of vapor transport deposition distributor with simpler operational behavior and the potential for improved cross-web uniformity was demonstrated. Second, an improved CdS feed system that will improve down-web uniformity was developed. Third, the core of a numerical model of fluid and heat flow within the distributor was developed, including flow in a 3-component gas system at high temperature and low pressure and particle sublimation.

  17. A study on dependence of the structural, optical and electrical properties of cadmium lead sulphide thin films on Cd/Pb ratio

    Energy Technology Data Exchange (ETDEWEB)

    Nair, Sinitha B., E-mail: sinithanair@gmail.com, E-mail: anithakklm@gmail.com; Abraham, Anitha, E-mail: sinithanair@gmail.com, E-mail: anithakklm@gmail.com; Philip, Rachel Reena, E-mail: reenatara@rediffmail.com [Thin film research Lab, U.C. College, Aluva, Kerala (India); Pradeep, B., E-mail: bp@cusat.ac.in [Solid State Physics Laboratory, Cochin University of science and Technology, Cochin (India); Shripathi, T., E-mail: shri@csr.res.in, E-mail: vganesancsr@gmail.com; Ganesan, V., E-mail: shri@csr.res.in, E-mail: vganesancsr@gmail.com [UGC-DAE CSR, Khandwa Road, Indore, 452001, Madhya Pradesh (India)

    2014-10-15

    Cadmium Lead Sulphide thin films with systematic variation in Cd/Pb ratio are prepared at 333K by CBD, adjusting the reagent-molarity, deposition time and pH. XRD exhibits crystalline-amorphous transition as Cd% exceeds Pb%. AFM shows agglomeration of crystallites of size ∼50±5 nm. EDAX assess the composition whereas XPS ascertains the ternary formation, with binding energies of Pb4f{sub 7/2} and 4f{sub 5/2}, Cd3d{sub 5/2} and 3d{sub 3/2} and S2p at 137.03, 141.606, 404.667, 412.133 and 160.218 eV respectively. The optical absorption spectra reveal the variance in the direct allowed band gaps, from 1.57eV to 2.42 eV as Cd/Pb ratio increases from 0.2 to 2.7, suggesting possibility of band gap engineering in the n-type films.

  18. Beryllium thin films for resistor applications

    Science.gov (United States)

    Fiet, O.

    1972-01-01

    Beryllium thin films have a protective oxidation resistant property at high temperature and high recrystallization temperature. However, the experimental film has very low temperature coefficient of resistance.

  19. Semiconductor-nanocrystal/conjugated polymer thin films

    Science.gov (United States)

    Alivisatos, A. Paul; Dittmer, Janke J.; Huynh, Wendy U.; Milliron, Delia

    2014-06-17

    The invention described herein provides for thin films and methods of making comprising inorganic semiconductor-nanocrystals dispersed in semiconducting-polymers in high loading amounts. The invention also describes photovoltaic devices incorporating the thin films.

  20. Preparation of thin vyns films

    International Nuclear Information System (INIS)

    Blanc, R.; Chedin, P.; Gizon, A.

    1965-01-01

    The fabrication of thin films of VYNS resin (copolymer of chloride and vinyl acetate) of superficial density from 3 to 50 μg/cm 2 with solutions in cyclohexanone is presented. Study and discussion of some properties compared with formvar film (polyvinyl formals). It appears that both can be used as source supports but formvar films are prepared more easily and more quickly, in addition they withstand higher temperatures. The main quality of VYNS is that they can be easily separated even several days after their preparation [fr

  1. Self-Limited Growth in Pentacene Thin Films.

    Science.gov (United States)

    Pachmajer, Stefan; Jones, Andrew O F; Truger, Magdalena; Röthel, Christian; Salzmann, Ingo; Werzer, Oliver; Resel, Roland

    2017-04-05

    Pentacene is one of the most studied organic semiconducting materials. While many aspects of the film formation have already been identified in very thin films, this study provides new insight into the transition from the metastable thin-film phase to bulk phase polymorphs. This study focuses on the growth behavior of pentacene within thin films as a function of film thickness ranging from 20 to 300 nm. By employing various X-ray diffraction methods, combined with supporting atomic force microscopy investigations, one crystalline orientation for the thin-film phase is observed, while three differently tilted bulk phase orientations are found. First, bulk phase crystallites grow with their 00L planes parallel to the substrate surface; second, however, crystallites tilted by 0.75° with respect to the substrate are found, which clearly dominate the former in ratio; third, a different bulk phase polymorph with crystallites tilted by 21° is found. The transition from the thin-film phase to the bulk phase is rationalized by the nucleation of the latter at crystal facets of the thin-film-phase crystallites. This leads to a self-limiting growth of the thin-film phase and explains the thickness-dependent phase behavior observed in pentacene thin films, showing that a large amount of material is present in the bulk phase much earlier during the film growth than previously thought.

  2. Nanocrystal thin film fabrication methods and apparatus

    Science.gov (United States)

    Kagan, Cherie R.; Kim, David K.; Choi, Ji-Hyuk; Lai, Yuming

    2018-01-09

    Nanocrystal thin film devices and methods for fabricating nanocrystal thin film devices are disclosed. The nanocrystal thin films are diffused with a dopant such as Indium, Potassium, Tin, etc. to reduce surface states. The thin film devices may be exposed to air during a portion of the fabrication. This enables fabrication of nanocrystal-based devices using a wider range of techniques such as photolithography and photolithographic patterning in an air environment.

  3. Dynamics in thin folded polymer films

    Science.gov (United States)

    Croll, Andrew; Rozairo, Damith

    Origami and Kirigami inspired structures depend on a complex interplay between geometry and material properties. While clearly important to the overall function, very little attention has focused on how extreme curvatures and singularities in real materials influence the overall dynamic behaviour of folded structures. In this work we use a set of three polymer thin films in order to closely examine the interaction of material and geometry. Specifically, we use polydimethylsiloxane (PDMS), polystyrene (PS) and polycarbonate (PC) thin films which we subject to loading in several model geometries of varying complexity. Depending on the material, vastly different responses are noted in our experiments; D-cones can annihilate, cut or lead to a crumpling cascade when pushed through a film. Remarkably, order can be generated with additional perturbation. Finally, the role of adhesion in complex folded structures can be addressed. AFOSR under the Young Investigator Program (FA9550-15-1-0168).

  4. Thin-film growth and the shadow instability

    International Nuclear Information System (INIS)

    Karunasiri, R.P.U.; Bruinsma, R.; Rudnick, J.

    1989-01-01

    We propose a growth model for deposition of thin amorphous films by the sputtering technique. For small values of the diffusion constant, the film develops a self-similar mountain landscape. As the diffusion constant is increased a regime is reached where growth of compact flat films is possible up to a critical height. Further deposition leads to surface roughening

  5. Fabrication and Film Qualification of Sr Modified Pb(Ca) TiO3 Thin Films

    International Nuclear Information System (INIS)

    Naw Hla Myat San; Khin Aye Thwe; Than Than Win; Yin Maung Maung; Ko Ko Kyaw Soe

    2011-12-01

    Strontium and calcium - modified lead titanate (Pb0.7 Ca0.15 Sr0.15 ) TiO3 (PCST)thin films were prepared by using spin coating technique. Phase transition of PCST was interpreted by means of Er-T characteristics. Process temperature dependence on micro-structure of PCST film was studied. Charge conduction mechanism of PCST thin film was also investigated for film qualification.

  6. Thin films of soft matter

    CERN Document Server

    Kalliadasis, Serafim

    2007-01-01

    A detailed overview and comprehensive analysis of the main theoretical and experimental advances on free surface thin film and jet flows of soft matter is given. At the theoretical front the book outlines the basic equations and boundary conditions and the derivation of low-dimensional models for the evolution of the free surface. Such models include long-wave expansions and equations of the boundary layer type and are analyzed via linear stability analysis, weakly nonlinear theories and strongly nonlinear analysis including construction of stationary periodic and solitary wave and similarity solutions. At the experimental front a variety of very recent experimental developments is outlined and the link between theory and experiments is illustrated. Such experiments include spreading drops and bubbles, imbibitions, singularity formation at interfaces and experimental characterization of thin films using atomic force microscopy, ellipsometry and contact angle measurements and analysis of patterns using Minkows...

  7. Review of thin film superconductivity

    International Nuclear Information System (INIS)

    Kihlstrom, K.E.

    1989-01-01

    Advances in thin film superconductivity are critical to the success of many proposed applications. The authors review several of the prominent techniques currently used to produce thin films of the high temperature superconductors including electron beam co-deposition, sputtering (both multiple and composite source configurations) and laser ablation. The authors look at the relevant parameters for each and evaluate the advantages and disadvantages of each technique. In addition, promising work on in situ oxidation is discussed. Also addressed are efforts to find optimum substrate materials and substrate buffer layers for various applications. The current state of the art for T c , J c and H c2 is presented for the yttrium, bismuth, and thallium compounds

  8. Polycrystalline thin films : A review

    Energy Technology Data Exchange (ETDEWEB)

    Valvoda, V [Charles Univ., Prague (Czech Republic). Faculty of Mathematics and Physics

    1996-09-01

    Polycrystalline thin films can be described in terms of grain morphology and in terms of their packing by the Thornton`s zone model as a function of temperature of deposition and as a function of energy of deposited atoms. Grain size and preferred grain orientation (texture) can be determined by X-ray diffraction (XRD) methods. A review of XRD analytical methods of texture analysis is given with main attention paid to simple empirical functions used for texture description and for structure analysis by joint texture refinement. To illustrate the methods of detailed structure analysis of thin polycrystalline films, examples of multilayers are used with the aim to show experiments and data evaluation to determine layer thickness, periodicity, interface roughness, lattice spacing, strain and the size of diffraction coherent volumes. The methods of low angle and high angle XRD are described and discussed with respect to their complementary information content.

  9. Facile and Scalable Fabrication of Highly Efficient Lead Iodide Perovskite Thin-Film Solar Cells in Air Using Gas Pump Method.

    Science.gov (United States)

    Ding, Bin; Gao, Lili; Liang, Lusheng; Chu, Qianqian; Song, Xiaoxuan; Li, Yan; Yang, Guanjun; Fan, Bin; Wang, Mingkui; Li, Chengxin; Li, Changjiu

    2016-08-10

    Control of the perovskite film formation process to produce high-quality organic-inorganic metal halide perovskite thin films with uniform morphology, high surface coverage, and minimum pinholes is of great importance to highly efficient solar cells. Herein, we report on large-area light-absorbing perovskite films fabrication with a new facile and scalable gas pump method. By decreasing the total pressure in the evaporation environment, the gas pump method can significantly enhance the solvent evaporation rate by 8 times faster and thereby produce an extremely dense, uniform, and full-coverage perovskite thin film. The resulting planar perovskite solar cells can achieve an impressive power conversion efficiency up to 19.00% with an average efficiency of 17.38 ± 0.70% for 32 devices with an area of 5 × 2 mm, 13.91% for devices with a large area up to 1.13 cm(2). The perovskite films can be easily fabricated in air conditions with a relative humidity of 45-55%, which definitely has a promising prospect in industrial application of large-area perovskite solar panels.

  10. NbN thin films for superconducting radio frequency cavities

    Science.gov (United States)

    Roach, W. M.; Skuza, J. R.; Beringer, D. B.; Li, Z.; Clavero, C.; Lukaszew, R. A.

    2012-12-01

    NbN thin films have the potential to be incorporated into radio frequency cavities in a multilayer coating to overcome the fundamental field gradient limit of 50 MV m-1 for the bulk niobium based technology that is currently implemented in particle accelerators. In addition to having a larger critical field value than bulk niobium, NbN films develop smoother surfaces which are optimal for cavity performance and lead to fewer losses. Here, we present a study on the correlation of film deposition parameters, surface morphology, microstructure, transport properties and superconducting properties of NbN thin films. We have achieved films with bulk-like lattice parameters and superconducting transition temperatures. These NbN films have a lower surface roughness than similarly grown niobium films of comparable thickness. The potential application of NbN thin films in accelerator cavities is discussed.

  11. NbN thin films for superconducting radio frequency cavities

    International Nuclear Information System (INIS)

    Roach, W M; Clavero, C; Lukaszew, R A; Skuza, J R; Beringer, D B; Li, Z

    2012-01-01

    NbN thin films have the potential to be incorporated into radio frequency cavities in a multilayer coating to overcome the fundamental field gradient limit of 50 MV m −1 for the bulk niobium based technology that is currently implemented in particle accelerators. In addition to having a larger critical field value than bulk niobium, NbN films develop smoother surfaces which are optimal for cavity performance and lead to fewer losses. Here, we present a study on the correlation of film deposition parameters, surface morphology, microstructure, transport properties and superconducting properties of NbN thin films. We have achieved films with bulk-like lattice parameters and superconducting transition temperatures. These NbN films have a lower surface roughness than similarly grown niobium films of comparable thickness. The potential application of NbN thin films in accelerator cavities is discussed. (paper)

  12. Magnetization in permalloy thin films

    Indian Academy of Sciences (India)

    Thin films of permalloy (Ni80Fe20) were prepared using an Ar+N2 mixture with magnetron ... alloys of Ni and Fe) take an important place. NiFe alloy with a ... room temperature (∼298 K, without intentional heating) on Si(100) substrates. A base pressure of 1×10−6 mbar was achieved prior to the deposition. Three different ...

  13. Thin-Film Material Science and Processing | Materials Science | NREL

    Science.gov (United States)

    Thin-Film Material Science and Processing Thin-Film Material Science and Processing Photo of a , a prime example of this research is thin-film photovoltaics (PV). Thin films are important because cadmium telluride thin film, showing from top to bottom: glass, transparent conducting oxide (thin layer

  14. Infrared analysis of thin films amorphous, hydrogenated carbon on silicon

    CERN Document Server

    Jacob, W; Schwarz-Selinger, T

    2000-01-01

    The infrared analysis of thin films on a thick substrate is discussed using the example of plasma-deposited, amorphous, hydrogenated carbon layers (a-C:H) on silicon substrates. The framework for the optical analysis of thin films is presented. The main characteristic of thin film optics is the occurrence of interference effects due to the coherent superposition of light multiply reflected at the various internal and external interfaces of the optical system. These interference effects lead to a sinusoidal variation of the transmitted and reflected intensity. As a consequence, the Lambert-Beer law is not applicable for the determination of the absorption coefficient of thin films. Furthermore, observable changes of the transmission and reflection spectra occur in the vicinity of strong absorption bands due to the Kramers-Kronig relation. For a sound data evaluation these effects have to be included in the analysis. To be able to extract the full information contained in a measured optical thin film spectrum, ...

  15. Photoconductivity of thin organic films

    International Nuclear Information System (INIS)

    Tkachenko, Nikolai V.; Chukharev, Vladimir; Kaplas, Petra; Tolkki, Antti; Efimov, Alexander; Haring, Kimmo; Viheriaelae, Jukka; Niemi, Tapio; Lemmetyinen, Helge

    2010-01-01

    Thin organic films were deposited on silicon oxide surfaces with golden interdigitated electrodes (interelectrode gap was 2 μm), and the film resistivities were measured in dark and under white light illumination. The compounds selected for the measurements include molecules widely used in solar cell applications, such as polythiophene (PHT), fullerene (C 60 ), pyrelene tetracarboxylic diimide (PTCDI) and copper phthalocyanine (CuPc), as well as molecules potentially interesting for photovoltaic applications, e.g. porphyrin-fullerene dyads. The films were deposited using thermal evaporation (e.g. for C 60 and CuPc films), spin coating for PHT, and Langmuir-Schaeffer for the layer-by-layer deposition of porphyrin-fullerene dyads. The most conducting materials in the series are films of PHT and CuPc with resistivities 1.2 x 10 3 Ω m and 3 x 10 4 Ω m, respectively. Under light illumination resistivity of all films decreases, with the strongest light effect observed for PTCDI, for which resistivity decreases by 100 times, from 3.2 x 10 8 Ω m in dark to 3.1 x 10 6 Ω m under the light.

  16. Flexible thin film magnetoimpedance sensors

    International Nuclear Information System (INIS)

    Kurlyandskaya, G.V.; Fernández, E.; Svalov, A.; Burgoa Beitia, A.; García-Arribas, A.; Larrañaga, A.

    2016-01-01

    Magnetically soft thin film deposited onto polymer substrates is an attractive option for flexible electronics including magnetoimpedance (MI) applications. MI FeNi/Ti based thin film sensitive elements were designed and prepared using the sputtering technique by deposition onto rigid and flexible substrates at different deposition rates. Their structure, magnetic properties and MI were comparatively analyzed. The main structural features were sufficiently accurately reproduced in the case of deposition onto cyclo olefine polymer substrates compared to glass substrates for the same conditions. Although for the best condition (28 nm/min rate) of the deposition onto polymer a significant reduction of the MI field sensitivity was found satisfactory for sensor applications sensitivity: 45%/Oe was obtained for a frequency of 60 MHz. - Highlights: • [FeNi/Ti] 3 /Cu/[FeNi/Ti] 3 films were prepared by sputtering at different deposition rates. • Polymer substrates insure sufficiently accurate reproducibility of the film structure. • High deposition rate of 28 nm/min insures the highest values of the magnetoimpedance sensitivity. • Deposition onto polymer results in the satisfactory magnetoimpedance sensitivity of 45%/Oe.

  17. Flexible thin film magnetoimpedance sensors

    Energy Technology Data Exchange (ETDEWEB)

    Kurlyandskaya, G.V., E-mail: galina@we.lc.ehu.es [Universidad del País Vasco, UPV/EHU, Departamento de Electricidad y Electrónica, P.O. Box 644, Bilbao 48080 (Spain); Ural Federal University, Laboratory of Magnetic sensoric, Lenin Ave. 51, 620083 Ekaterinburg (Russian Federation); Fernández, E. [BCMaterials UPV-EHU, Vizcaya Science and Technology Park, 48160 Derio (Spain); Svalov, A. [Universidad del País Vasco, UPV/EHU, Departamento de Electricidad y Electrónica, P.O. Box 644, Bilbao 48080 (Spain); Ural Federal University, Laboratory of Magnetic sensoric, Lenin Ave. 51, 620083 Ekaterinburg (Russian Federation); Burgoa Beitia, A. [Universidad del País Vasco, UPV/EHU, Departamento de Electricidad y Electrónica, P.O. Box 644, Bilbao 48080 (Spain); García-Arribas, A. [Universidad del País Vasco, UPV/EHU, Departamento de Electricidad y Electrónica, P.O. Box 644, Bilbao 48080 (Spain); BCMaterials UPV-EHU, Vizcaya Science and Technology Park, 48160 Derio (Spain); Larrañaga, A. [SGIker, Servicios Generales de Investigación, Universidad del País Vasco (UPV/EHU), 48080 Bilbao (Spain)

    2016-10-01

    Magnetically soft thin film deposited onto polymer substrates is an attractive option for flexible electronics including magnetoimpedance (MI) applications. MI FeNi/Ti based thin film sensitive elements were designed and prepared using the sputtering technique by deposition onto rigid and flexible substrates at different deposition rates. Their structure, magnetic properties and MI were comparatively analyzed. The main structural features were sufficiently accurately reproduced in the case of deposition onto cyclo olefine polymer substrates compared to glass substrates for the same conditions. Although for the best condition (28 nm/min rate) of the deposition onto polymer a significant reduction of the MI field sensitivity was found satisfactory for sensor applications sensitivity: 45%/Oe was obtained for a frequency of 60 MHz. - Highlights: • [FeNi/Ti]{sub 3}/Cu/[FeNi/Ti]{sub 3} films were prepared by sputtering at different deposition rates. • Polymer substrates insure sufficiently accurate reproducibility of the film structure. • High deposition rate of 28 nm/min insures the highest values of the magnetoimpedance sensitivity. • Deposition onto polymer results in the satisfactory magnetoimpedance sensitivity of 45%/Oe.

  18. Characterization of nanocrystalline cadmium telluride thin films ...

    Indian Academy of Sciences (India)

    Unknown

    tion method, successive ionic layer adsorption and reaction (SILAR), are described. For deposition of CdTe thin films ... By conducting several trials optimization of the adsorption, reaction and rinsing time duration for CdTe thin film .... The electrical resistivity of CdTe films was studied in air. Figure 3 shows the variation of log ...

  19. Evaluation of residual stress in sputtered tantalum thin-film

    Energy Technology Data Exchange (ETDEWEB)

    Al-masha’al, Asa’ad, E-mail: asaad.al@ed.ac.uk; Bunting, Andrew; Cheung, Rebecca

    2016-05-15

    Highlights: • Tantalum thin-films have been deposited by DC magnetron sputtering system. • Thin-film stress is observed to be strongly influenced by sputtering pressure. • Transition towards the compressive stress is ascribed to the annealing at 300 °C. • Expose thin-film to air ambient or ion bombardment lead to a noticeable change in the residual stress. - Abstract: The influence of deposition conditions on the residual stress of sputtered tantalum thin-film has been evaluated in the present study. Films have been deposited by DC magnetron sputtering and curvature measurement method has been employed to calculate the residual stress of the films. Transitions of tantalum film stress from compressive to tensile state have been observed as the sputtering pressure increases. Also, the effect of annealing process at temperature range of 90–300 °C in oxygen ambient on the residual stress of the films has been studied. The results demonstrate that the residual stress of the films that have been deposited at lower sputtering pressure has become more compressive when annealed at 300 °C. Furthermore, the impact of exposure to atmospheric ambient on the tantalum film stress has been investigated by monitoring the variation of the residual stress of both annealed and unannealed films over time. The as-deposited films have been exposed to pure Argon energy bombardment and as result, a high compressive stress has been developed in the films.

  20. Altering properties of cerium oxide thin films by Rh doping

    International Nuclear Information System (INIS)

    Ševčíková, Klára; Nehasil, Václav; Vorokhta, Mykhailo; Haviar, Stanislav; Matolín, Vladimír

    2015-01-01

    Highlights: • Thin films of ceria doped by rhodium deposited by RF magnetron sputtering. • Concentration of rhodium has great impact on properties of Rh–CeO x thin films. • Intensive oxygen migration in films with low concentration of rhodium. • Oxygen migration suppressed in films with high amount of Rh dopants. - Abstract: Ceria containing highly dispersed ions of rhodium is a promising material for catalytic applications. The Rh–CeO x thin films with different concentrations of rhodium were deposited by RF magnetron sputtering and were studied by soft and hard X-ray photoelectron spectroscopies, Temperature programmed reaction and X-ray powder diffraction techniques. The sputtered films consist of rhodium–cerium mixed oxide where cerium exhibits a mixed valency of Ce 4+ and Ce 3+ and rhodium occurs in two oxidation states, Rh 3+ and Rh n+ . We show that the concentration of rhodium has a great influence on the chemical composition, structure and reducibility of the Rh–CeO x thin films. The films with low concentrations of rhodium are polycrystalline, while the films with higher amount of Rh dopants are amorphous. The morphology of the films strongly influences the mobility of oxygen in the material. Therefore, varying the concentration of rhodium in Rh–CeO x thin films leads to preparing materials with different properties

  1. Thin films for emerging applications v.16

    CERN Document Server

    Francombe, Maurice H

    1992-01-01

    Following in the long-standing tradition of excellence established by this serial, this volume provides a focused look at contemporary applications. High Tc superconducting thin films are discussed in terms of ion beam and sputtering deposition, vacuum evaporation, laser ablation, MOCVD, and other deposition processes in addition to their ultimate applications. Detailed treatment is also given to permanent magnet thin films, lateral diffusion and electromigration in metallic thin films, and fracture and cracking phenomena in thin films adhering to high-elongation substrates.

  2. Analysis of Hard Thin Film Coating

    Science.gov (United States)

    Shen, Dashen

    1998-01-01

    MSFC is interested in developing hard thin film coating for bearings. The wearing of the bearing is an important problem for space flight engine. Hard thin film coating can drastically improve the surface of the bearing and improve the wear-endurance of the bearing. However, many fundamental problems in surface physics, plasma deposition, etc, need further research. The approach is using electron cyclotron resonance chemical vapor deposition (ECRCVD) to deposit hard thin film an stainless steel bearing. The thin films in consideration include SiC, SiN and other materials. An ECRCVD deposition system is being assembled at MSFC.

  3. Progress in thin film techniques

    International Nuclear Information System (INIS)

    Weingarten, W.

    1996-01-01

    Progress since the last Workshop is reported on superconducting accelerating RF cavities coated with thin films. The materials investigated are Nb, Nb 3 Sn, NbN and NbTiN, the techniques applied are diffusion from the vapour phase (Nb 3 Sn, NbN), the bronze process (Nb 3 Sn), and sputter deposition on a copper substrate (Nb, NbTiN). Specially designed cavities for sample evaluation by RF methods have been developed (triaxial cavity). New experimental techniques to assess the RF amplitude dependence of the surface resistance are presented (with emphasis on niobium films sputter deposited on copper). Evidence is increasing that they are caused by magnetic flux penetration into the surface layer. (R.P.)

  4. High temperature superconductor thin films

    International Nuclear Information System (INIS)

    Correra, L.

    1992-01-01

    Interdisciplinary research on superconducting oxides is the main focus of the contributors in this volume. Several aspects of the thin film field from fundamental properties to applications are examined. Interesting results for the Bi system are also reviewed. The 132 papers, including 8 invited, report mainly on the 1-2-3 system, indicating that the Y-Ba-Cu-O and related compounds are still the most intensively studied materials in this field. The volume attests to the significant progress that has been made in this field, as well as reporting on the challenging problems that still remain to be solved. The papers are presented in five chapters, subsequently on properties, film growth and processing, substrates and multilayers, structural characterization, and applications

  5. Minerals deposited as thin films

    International Nuclear Information System (INIS)

    Vazquez, Cristina; Leyt, D.V. de; Custo, Graciela

    1987-01-01

    Free matrix effects are due to thin film deposits. Thus, it was decided to investigate this technique as a possibility to use pure oxide of the desired element, extrapolating its concentration from analytical curves made with avoiding, at the same time, mathematical corrections. The proposed method was employed to determine iron and titanium concentrations in geological samples. The range studied was 0.1-5%m/m for titanium and 5-20%m/m for iron. For both elements the reproducibility was about 7% and differences between this method and other chemical determinations were 15% for titanium and 7% for iron. (Author) [es

  6. Thin Film Photovoltaic Partnership Project | Photovoltaic Research | NREL

    Science.gov (United States)

    Thin Film Photovoltaic Partnership Project Thin Film Photovoltaic Partnership Project NREL's Thin Film Photovoltaic (PV) Partnership Project led R&D on emerging thin-film solar technologies in the United States from 1994 to 2009. The project made many advances in thin-film PV technologies that allowed

  7. Potassium doped methylammonium lead iodide (MAPbI3) thin films as a potential absorber for perovskite solar cells; structural, morphological, electronic and optoelectric properties

    Science.gov (United States)

    Muzammal uz Zaman, Muhammad; Imran, Muhammad; Saleem, Abida; Kamboh, Afzal Hussain; Arshad, Muhammad; Khan, Nawazish Ali; Akhter, Parvez

    2017-10-01

    In this article, we have demonstrated the doping of K in the light absorbing CH3NH3PbI3 perovskite i.e. (M = CH3, A = NH3; x = 0-1). One of the major merits of methylammonium lead iodide (CH3NH3PbI3) perovskites is that they act as efficient absorbing material of light in photovoltaic cell imparting long carrier lifetime and optimum band gap. The structural, morphological, electronic and optoelectric properties of potassium (K) doped light absorber methylammonium lead iodide (CH3NH3PbI3) perovskites are reported here i.e. Kx(MA)1-xPbI3 (M = CH3, A =NH3; x = 0-1). The thin films of perovskites (x = 0-1) were deposited by spin coating on cleaned FTO substrates and characterized by X-ray diffraction (XRD), Scanning electron microscopy (SEM), current-voltage (IV), X-ray photoelectron spectroscopy (XPS) and Diffused reflectance spectroscopy (DRS) analysis. The organic constituents i.e. MA = CH3NH3, in perovskites solar cells induce instability even at the room temperature. To overcome such instabilities we have replaced the organic constituents by K because both of them have electropositive nature. Potassium successfully replaces the CH3NH3. Initially, this compound grows in a tetragonal crystal structure, however, beyond 30% doping of potassium orthorhombic distortions are induced in the parent tetragonal unit cell. Such phase transformation is microscopically visible in the electron micrographs of doped samples; cubic grains for MAPbI3 begin to transform into strip like structures in K-doped samples. The resistance of the samples is decreased for partial K-doping, which we suggested to be arising due to the electropositive nature of K. It is observed that the binding energy difference between Pb4f and I3d core levels are very similar in all the investigated systems and show formal oxidation states. Also, the partially doped samples showed increased absorption and bandgaps around 1.5 eV which is an optimum value for solar absorption.

  8. Ion beam deposited epitaxial thin silicon films

    International Nuclear Information System (INIS)

    Orrman-Rossiter, K.G.; Al-Bayati, A.H.; Armour, D.G.; Donnelly, S.E.; Berg, J.A. van den

    1991-01-01

    Deposition of thin films using low energy, mass-separated ion beams is a potentially important low temperature method of producing epitaxial layers. In these experiments silicon films were grown on Si (001) substrates using 10-200 eV 28 Si + and 30 Si + ions at substrate temperatures in the range 273-1073 K, under ultrahigh-vacuum conditions (deposition pressure -7 Pa). The film crystallinity was assessed in situ using medium energy ion scattering (MEIS). Films of crystallinity comparable to bulk samples were grown using 10-40 eV 28 Si + and 30 Si + ions at deposition temperatures in the range 623-823 K. These experiments confirmed the role of key experimental parameters such as ion energy, substrate temperature during deposition, and the surface treatment prior to deposition. It was found that a high temperature in situ anneal (1350-1450 K) gave the best results for epitaxial nucleation, whereas low energy (20-40 eV) Cl + ion bombardment resulted in amorphous film growth. The deposition energy for good epitaxial growth indicates that it is necessary to provide enough energy to induce local mobility but not to cause atomic displacements leading to the buildup of stable defects, e.g. divacancies, below the surface layer of the growing film. (orig.)

  9. Subtractive fabrication of ferroelectric thin films with precisely controlled thickness

    Science.gov (United States)

    Ievlev, Anton V.; Chyasnavichyus, Marius; Leonard, Donovan N.; Agar, Joshua C.; Velarde, Gabriel A.; Martin, Lane W.; Kalinin, Sergei V.; Maksymovych, Petro; Ovchinnikova, Olga S.

    2018-04-01

    The ability to control thin-film growth has led to advances in our understanding of fundamental physics as well as to the emergence of novel technologies. However, common thin-film growth techniques introduce a number of limitations related to the concentration of defects on film interfaces and surfaces that limit the scope of systems that can be produced and studied experimentally. Here, we developed an ion-beam based subtractive fabrication process that enables creation and modification of thin films with pre-defined thicknesses. To accomplish this we transformed a multimodal imaging platform that combines time-of-flight secondary ion mass spectrometry with atomic force microscopy to a unique fabrication tool that allows for precise sputtering of the nanometer-thin layers of material. To demonstrate fabrication of thin-films with in situ feedback and control on film thickness and functionality we systematically studied thickness dependence of ferroelectric switching of lead-zirconate-titanate, within a single epitaxial film. Our results demonstrate that through a subtractive film fabrication process we can control the piezoelectric response as a function of film thickness as well as improve on the overall piezoelectric response versus an untreated film.

  10. Work function of oxygen exposed lead and lead/indium alloy films

    International Nuclear Information System (INIS)

    Gundlach, K.H.; Hellemann, H.P.; Hoelzl, J.

    1982-01-01

    The effect of indium in superconducting tunnel junctions with lead/indium alloy base electrodes is investigated by measuring the vacuum work function of lead, indium, and lead/indium alloy films. It is found that the anomalous decrease of the work function of lead upon exposure to oxygen, explained by the penetration of oxygen into the inner surface of the lead film, is reversed into a slight increase in work function when some indium is added to the lead. This result indicates that the addition of indium provides a protection by suppressing the penetration of oxygen (and probably other gases) into the interior of the thin film

  11. Laser nanostructuring of ZnO thin films

    Energy Technology Data Exchange (ETDEWEB)

    Nedyalkov, N., E-mail: nned@ie.bas.bg [Department of Electronics and Electrical Engineering, Keio University, 3-14-1 Hiyoshi Kohoku-ku, Yokohama-shi, Kanagawa-ken 223-8522 (Japan); Institute of Electronics, Bulgarian Academy of Sciences, Tzarigradsko shousse 72, Sofia 1784 (Bulgaria); Koleva, M.; Nikov, R.; Atanasov, P. [Institute of Electronics, Bulgarian Academy of Sciences, Tzarigradsko shousse 72, Sofia 1784 (Bulgaria); Nakajima, Y.; Takami, A.; Shibata, A.; Terakawa, M. [Department of Electronics and Electrical Engineering, Keio University, 3-14-1 Hiyoshi Kohoku-ku, Yokohama-shi, Kanagawa-ken 223-8522 (Japan)

    2016-06-30

    Highlights: • Nanosecond laser pulse nanostructuring of ZnO thin films on metal substrate is demonstrated. • Two regimes of the thin film modification are observed depending on the applied laser fluence. • At high fluence regime the ZnO film is homogeneously decomposed into nanosized particles. • The characteristic size of the formed nanostructures corresponds to the domain size of the thin film. - Abstract: In this work, results on laser processing of thin zinc oxide films deposited on metal substrate are presented. ZnO films are obtained by classical nanosecond pulsed laser deposition method in oxygen atmosphere on tantalum substrate. The produced films are then processed by nanosecond laser pulses at wavelength of 355 nm. The laser processing parameters and the film thickness are varied and their influence on the fabricated structures is estimated. The film morphology after the laser treatment is found to depend strongly on the laser fluence as two regimes are defined. It is shown that at certain conditions (high fluence regime) the laser treatment of the film leads to formation of a discrete nanostructure, composed of spherical like nanoparticles with narrow size distribution. The dynamics of the melt film on the substrate and fast cooling are found to be the main mechanisms for fabrication of the observed structures. The demonstrated method is an alternative way for direct fabrication of ZnO nanostructures on metal which can be easy implemented in applications as resistive sensor devices, electroluminescent elements, solar cell technology.

  12. Intrinsically conductive polymer thin film piezoresistors

    DEFF Research Database (Denmark)

    Lillemose, Michael; Spieser, Martin; Christiansen, N.O.

    2008-01-01

    We report on the piezoresistive effect in the intrinsically conductive polymer, polyaniline. A process recipe for indirect patterning of thin film polyaniline has been developed. Using a specially designed chip, the polyaniline thin films have been characterised with respect to resistivity...

  13. Excimer Laser Deposition of PLZT Thin Films

    National Research Council Canada - National Science Library

    Petersen, GAry

    1991-01-01

    .... In order to integrate these devices into optical systems, the production of high quality thin films with high transparency and perovskite crystal structure is desired. This requires development of deposition technologies to overcome the challenges of depositing and processing PLZT thin films.

  14. Thin films of mixed metal compounds

    Science.gov (United States)

    Mickelsen, Reid A.; Chen, Wen S.

    1985-01-01

    A compositionally uniform thin film of a mixed metal compound is formed by simultaneously evaporating a first metal compound and a second metal compound from independent sources. The mean free path between the vapor particles is reduced by a gas and the mixed vapors are deposited uniformly. The invention finds particular utility in forming thin film heterojunction solar cells.

  15. Field ion microscope studies on thin films

    International Nuclear Information System (INIS)

    Cavaleru, A.; Scortaru, A.

    1976-01-01

    A review of the progress made in the last years in FIM application to thin film structure studies and adatom properties important in the nucleation stage of thin film growth: substrate binding and mobility of individual adatoms, behaviour of adatoms clusters is presented. (author)

  16. Phase transitions and optical characterization of lead-free piezoelectric (K0.5Na0.5)0.96Li0.04(Nb 0.8Ta0.2)O3 thin films

    KAUST Repository

    Yao, Yingbang

    2013-06-01

    Lead-free piezoelectric thin films, (K0.5Na0.5) 0.96Li0.04(Nb0.8Ta0.2)O 3, were epitaxially grown on MgO(001) and Nb-doped SrTiO 3(001) substrates using pulsed laser deposition. The optimum deposition temperature was found to be 600 C. Two types of in-plane orientations were observed in the films depending on the substrates used. The transmittance and photoluminescence spectra as well as the dielectric and ferroelectric properties of the films were measured. The measured band-gap energy was found to be decreased with the deposition temperature. The dielectric constant decreased from 550 to 300 as the frequency increased from 100 Hz to 1 MHz. The measured remnant polarization and coercive field were 4 μC/cm2 and 68 kV/cm, respectively. The phase transitions of the films were studied by Raman spectroscopy. Two distinct anomalies originating from the cubic-to-tetragonal (TC-T ~ 300 C) and tetragonal-to-orthorhombic (TT-O ~ 120 C) phase transitions were observed. Our results show that Raman spectroscopy is a powerful tool in identifying the phase transitions in ferroelectric thin films. © 2013 Elsevier B.V.

  17. Cellulose triacetate, thin film dielectric capacitor

    Science.gov (United States)

    Yen, Shiao-Ping S. (Inventor); Jow, T. Richard (Inventor)

    1995-01-01

    Very thin films of cellulose triacetate are cast from a solution containing a small amount of high boiling temperature, non-solvent which evaporates last and lifts the film from the casting surface. Stretched, oriented, crystallized films have high electrical breakdown properties. Metallized films less than about 2 microns in thickness form self-healing electrodes for high energy density, pulsed power capacitors. Thicker films can be utilized as a dielectric for a capacitor.

  18. Nanostructured thin films and coatings functional properties

    CERN Document Server

    Zhang, Sam

    2010-01-01

    The second volume in ""The Handbook of Nanostructured Thin Films and Coatings"" set, this book focuses on functional properties, including optical, electronic, and electrical properties, as well as related devices and applications. It explores the large-scale fabrication of functional thin films with nanoarchitecture via chemical routes, the fabrication and characterization of SiC nanostructured/nanocomposite films, and low-dimensional nanocomposite fabrication and applications. The book also presents the properties of sol-gel-derived nanostructured thin films as well as silicon nanocrystals e

  19. PZT Thin Film Piezoelectric Traveling Wave Motor

    Science.gov (United States)

    Shen, Dexin; Zhang, Baoan; Yang, Genqing; Jiao, Jiwei; Lu, Jianguo; Wang, Weiyuan

    1995-01-01

    With the development of micro-electro-mechanical systems (MEMS), its various applications are attracting more and more attention. Among MEMS, micro motors, electrostatic and electromagnetic, are the typical and important ones. As an alternative approach, the piezoelectric traveling wave micro motor, based on thin film material and integrated circuit technologies, circumvents many of the drawbacks of the above mentioned two types of motors and displays distinct advantages. In this paper we report on a lead-zirconate-titanate (PZT) piezoelectric thin film traveling wave motor. The PZT film with a thickness of 150 micrometers and a diameter of 8 mm was first deposited onto a metal substrate as the stator material. Then, eight sections were patterned to form the stator electrodes. The rotor had an 8 kHz frequency power supply. The rotation speed of the motor is 100 rpm. The relationship of the friction between the stator and the rotor and the structure of the rotor on rotation were also studied.

  20. BDS thin film damage competition

    Science.gov (United States)

    Stolz, Christopher J.; Thomas, Michael D.; Griffin, Andrew J.

    2008-10-01

    A laser damage competition was held at the 2008 Boulder Damage Symposium in order to determine the current status of thin film laser resistance within the private, academic, and government sectors. This damage competition allows a direct comparison of the current state-of-the-art of high laser resistance coatings since they are all tested using the same damage test setup and the same protocol. A normal incidence high reflector multilayer coating was selected at a wavelength of 1064 nm. The substrates were provided by the submitters. A double blind test assured sample and submitter anonymity so only a summary of the results are presented here. In addition to the laser resistance results, details of deposition processes, coating materials, and layer count will also be shared.

  1. Scanning tunneling spectroscopy of Pb thin films

    Energy Technology Data Exchange (ETDEWEB)

    Becker, Michael

    2010-12-13

    The present thesis deals with the electronic structure, work function and single-atom contact conductance of Pb thin films, investigated with a low-temperature scanning tunneling microscope. The electronic structure of Pb(111) thin films on Ag(111) surfaces is investigated using scanning tunneling spectroscopy (STS). Quantum size effects, in particular, quantum well states (QWSs), play a crucial role in the electronic and physical properties of these films. Quantitative analysis of the spectra yields the QWS energies as a function of film thickness, the Pb bulk-band dispersion in {gamma}-L direction, scattering phase shifts at the Pb/Ag interface and vacuum barrier as well as the lifetime broadening at anti {gamma}. The work function {phi} is an important property of surfaces, which influences catalytic reactivity and charge injection at interfaces. It controls the availability of charge carriers in front of a surface. Modifying {phi} has been achieved by deposition of metals and molecules. For investigating {phi} at the atomic scale, scanning tunneling microscopy (STM) has become a widely used technique. STM measures an apparent barrier height {phi}{sub a}, which is commonly related to the sample work function {phi}{sub s} by: {phi}{sub a}=({phi}{sub s}+{phi}{sub t}- vertical stroke eV vertical stroke)/2, with {phi}{sub t} the work function of the tunneling tip, V the applied tunneling bias voltage, and -e the electron charge. Hence, the effect of the finite voltage in STM on {phi}{sub a} is assumed to be linear and the comparison of {phi}{sub a} measured at different surface sites is assumed to yield quantitative information about work function differences. Here, the dependence of {phi}{sub a} on the Pb film thickness and applied bias voltage V is investigated. {phi}{sub a} is found to vary significantly with V. This bias dependence leads to drastic changes and even inversion of contrast in spatial maps of {phi}{sub a}, which are related to the QWSs in the Pb

  2. Method of producing thin cellulose nitrate film

    International Nuclear Information System (INIS)

    Lupica, S.B.

    1975-01-01

    An improved method for forming a thin nitrocellulose film of reproducible thickness is described. The film is a cellulose nitrate film, 10 to 20 microns in thickness, cast from a solution of cellulose nitrate in tetrahydrofuran, said solution containing from 7 to 15 percent, by weight, of dioctyl phthalate, said cellulose nitrate having a nitrogen content of from 10 to 13 percent

  3. Dimensional scaling of perovskite ferroelectric thin films

    Science.gov (United States)

    Keech, Ryan R.

    Dimensional size reduction has been the cornerstone of the exponential improvement in silicon based logic devices for decades. However, fundamental limits in the device physics were reached ˜2003, halting further reductions in clock speed without significant penalties in power consumption. This has motivated the research into next generation transistors and switching devices to reinstate the scaling laws for clock speed. This dissertation aims to support the scaling of devices that are based on ferroelectricity and piezoelectricity and to provide a roadmap for the corresponding materials performance. First, a scalable growth process to obtain highly {001}-oriented lead magnesium niobate - lead titanate (PMN-PT) thin films was developed, motivated by the high piezoelectric responses observed in bulk single crystals. It was found that deposition of a 2-3 nm thick PbO buffer layer on {111} Pt thin film bottom electrodes, prior to chemical solution deposition of PMN-PT reduces the driving force for Pb diffusion from the PMN-PT to the bottom electrode, and facilitates nucleation of {001}-oriented perovskite grains. Energy dispersive spectroscopy demonstrated that up to 10% of the Pb from a PMN-PT precursor solution may diffuse into the bottom electrode. PMN-PT grains with a mixed {101}/{111} orientation in a matrix of Pb-deficient pyrochlore phase were then promoted near the interface. When this is prevented, phase pure films with {001} orientation with Lotgering factors of 0.98-1.0, can be achieved. The resulting films of only 300 nm in thickness exhibit longitudinal effective d33,f coefficients of ˜90 pm/V and strain values of ˜1% prior to breakdown. 300 nm thick epitaxial and polycrystalline lead magnesium niobate - lead titanate (70PMN-30PT) blanket thin films were studied for the relative contributions to property thickness dependence from interfacial and grain boundary low permittivity layers. Epitaxial PMN-PT films were grown on SrRuO 3 /(001)SrTiO3, while

  4. Macro stress mapping on thin film buckling

    Energy Technology Data Exchange (ETDEWEB)

    Goudeau, P.; Villain, P.; Renault, P.-O.; Tamura, N.; Celestre, R.S.; Padmore, H.A.

    2002-11-06

    Thin films deposited by Physical Vapour Deposition techniques on substrates generally exhibit large residual stresses which may be responsible of thin film buckling in the case of compressive stresses. Since the 80's, a lot of theoretical work has been done to develop mechanical models but only a few experimental work has been done on this subject to support these theoretical approaches and nothing concerning local stress measurement mainly because of the small dimension of the buckling (few 10th mm). This paper deals with the application of micro beam X-ray diffraction available on synchrotron radiation sources for stress mapping analysis of gold thin film buckling.

  5. Solid thin film materials for use in thin film charge-coupled devices

    International Nuclear Information System (INIS)

    Lynch, S.J.

    1983-01-01

    Solid thin films deposited by vacuum deposition were evaluated to ascertain their effectiveness for use in the manufacturing of charge-coupled devices (CCDs). Optical and electrical characteristics of tellurium and Bi 2 Te 3 solid thin films were obtained in order to design and to simulate successfully the operation of thin film (TF) CCDs. In this article some of the material differences between single-crystal material and the island-structured thin film used in TFCCDs are discussed. The electrical parameters were obtained and tabulated, e.g. the mobility, conductivity, dielectric constants, permittivity, lifetime of holes and electrons in the thin films and drift diffusion constants. The optical parameters were also measured and analyzed. After the design was complete, experimental TFCCDs were manufactured and were successfully operated utilizing the aforementioned solid thin films. (Auth.)

  6. Passivation Effects in Copper Thin Films

    International Nuclear Information System (INIS)

    Wiederhirn, G.; Nucci, J.; Richter, G.; Arzt, E.; Balk, T. J.; Dehm, G.

    2006-01-01

    We studied the influence of a 10 nm AlxOy passivation on the stress-temperature behavior of 100 nm and 1 μm thick Cu films. At low temperatures, the passivation induces a large tensile stress increase in the 100 nm film; however, its effect on the 1 μm film is negligible. At high temperatures, the opposite behavior is observed; while the passivation does not change the 100 nm film behavior, it strengthens the 1 μm film by driving it deeper into compression. These observations are explained in light of a combination of constrained diffusional creep and dislocation dynamics unique to ultra-thin films

  7. Attempt to produce both thick and thinned flowing superfluid films

    International Nuclear Information System (INIS)

    Kwoh, D.S.W.; Goodstein, D.L.

    1977-01-01

    As discussed in the preceding paper by Graham, a controversy has arisen over conflicting reports of whether a superfluid film becomes thinned when it is set into motion. We have performed an experiment designed to reproduce as nearly as possible two previous measurements giving opposite results. Our experiment is also designed to test directly a theory proposed by Goodstein and Saffman which would have reconciled the apparently contradictory observations. We are unable to reproduce the thick-film result, finding kinetic thinning in all cases, even where the Goodstein--Saffman theory would lead us to expect a thick film. We conclude, in agreement with Graham, that the film is always thinned when it flows, and that the theory is therefore unnecessary

  8. Epitaxy, thin films and superlattices

    International Nuclear Information System (INIS)

    Jagd Christensen, Morten

    1997-05-01

    This report is the result of structural investigations of 3d transition metal superlattices consisting of Fe/V, Cr/Mn, V/Mn and Fe/Mn, and a structural and magnetic study of a series of Ho/Pr alloys. The work includes preparation and characterization of substrates as well as growth of thin films and Fe/V superlattices by molecular beam epitaxy, including in-situ characterization by reflection high energy electron diffraction and Auger electron spectroscopy. Structural characterization has been done by x-ray diffraction and neutron diffraction. The x-ray diffraction experiments have been performed on the rotating copper anode at Risoe, and at synchrotron facilities in Hamburg and Brookhaven, and the neutron scattering was done at the Danish research reactor DR3 at Risoe. In addition to longitudinal scans, giving information about the structural parameters in the modulation direction, non-specular scans were also performed. This type of scans gives information about in-plane orientation and lattice parameters. From the analysis, structural information is obtained about lattice parameters, epitaxial strain, coherence lengths and crystallographic orientation for the superlattice systems, except Fe/Mn superlattices, which could not be modelled. For the Ho/Pr alloys, x-ray magnetic scattering was performed, and the crystal and magnetic structure was investigated. (au)

  9. Epitaxy, thin films and superlattices

    Energy Technology Data Exchange (ETDEWEB)

    Jagd Christensen, Morten

    1997-05-01

    This report is the result of structural investigations of 3d transition metal superlattices consisting of Fe/V, Cr/Mn, V/Mn and Fe/Mn, and a structural and magnetic study of a series of Ho/Pr alloys. The work includes preparation and characterization of substrates as well as growth of thin films and Fe/V superlattices by molecular beam epitaxy, including in-situ characterization by reflection high energy electron diffraction and Auger electron spectroscopy. Structural characterization has been done by x-ray diffraction and neutron diffraction. The x-ray diffraction experiments have been performed on the rotating copper anode at Risoe, and at synchrotron facilities in Hamburg and Brookhaven, and the neutron scattering was done at the Danish research reactor DR3 at Risoe. In addition to longitudinal scans, giving information about the structural parameters in the modulation direction, non-specular scans were also performed. This type of scans gives information about in-plane orientation and lattice parameters. From the analysis, structural information is obtained about lattice parameters, epitaxial strain, coherence lengths and crystallographic orientation for the superlattice systems, except Fe/Mn superlattices, which could not be modelled. For the Ho/Pr alloys, x-ray magnetic scattering was performed, and the crystal and magnetic structure was investigated. (au) 14 tabs.; 58 ills., 96 refs.

  10. Flush Mounting Of Thin-Film Sensors

    Science.gov (United States)

    Moore, Thomas C., Sr.

    1992-01-01

    Technique developed for mounting thin-film sensors flush with surfaces like aerodynamic surfaces of aircraft, which often have compound curvatures. Sensor mounted in recess by use of vacuum pad and materials selected for specific application. Technique involves use of materials tailored to thermal properties of substrate in which sensor mounted. Together with customized materials, enables flush mounting of thin-film sensors in most situations in which recesses for sensors provided. Useful in both aircraft and automotive industries.

  11. Thin film description by wavelet coefficients statistics

    Czech Academy of Sciences Publication Activity Database

    Boldyš, Jiří; Hrach, R.

    2005-01-01

    Roč. 55, č. 1 (2005), s. 55-64 ISSN 0011-4626 Grant - others:GA UK(CZ) 173/2003 Institutional research plan: CEZ:AV0Z10750506 Keywords : thin films * wavelet transform * descriptors * histogram model Subject RIV: BD - Theory of Information Impact factor: 0.360, year: 2005 http://library.utia.cas.cz/separaty/2009/ZOI/boldys-thin film description by wavelet coefficients statistics .pdf

  12. Photoluminescence properties of perovskite multilayer thin films

    Energy Technology Data Exchange (ETDEWEB)

    Macario, Leilane Roberta; Longo, Elson, E-mail: leilanemacario@gmail.com [Universidade Federal de Sao Carlos (UFSCar), SP (Brazil); Mazzo, Tatiana Martelli [Universidade Federal de Sao Paulo (UNIFESP), SP (Brazil); Bouquet, Valerie; Deputier, Stephanie; Ollivier, Sophie; Guilloux-Viry, Maryline [Universite de Rennes (France)

    2016-07-01

    Full text: The knowledge of the optical properties of thin films is important in many scientific, technological and industrial applications of thin films such as photoconductivity, solar energy, photography, and numerous other applications [1]. In this study, perovskite type oxides were grown by pulsed laser deposition [2] in order to obtain thin films with applicable optical properties. The LaNiO{sub 3} (LN), BaTiO{sub 3} (BT) and KNbO{sub 3} (KNb) targets were prepared by solid-state reaction. The X-ray Diffraction revealed the presence of the desired phases, containing the elements of interest in the targets and in the thin films that were produced. The LN, BT and KNb thin films were polycrystalline and the corresponding diffraction peaks were indexed in the with JCPDS cards n. 00-033-0711, n. 00-005-0626, and n. 00-009-0156, respectively. The multilayers films were polycrystalline. The majority of the micrographs obtained by scanning electron microscopy presented films with a thickness from 100 to 400 nm. The photoluminescent (PL) emission spectra of thin films show different broad bands that occupies large region of the visible spectrum, ranging from about 300-350 to 600-650 nm of the electromagnetic spectrum. The PL emission is associated with the order-disorder structural, even small structural changes can modify the interactions between electronic states. The structural disorder results in formation of new energy levels in the forbidden region. The proximity or distance of these new energy levels formed in relation to valence band and to the conduction band results in PL spectra located at higher or lower energies. These interactions change the electronic states which can be influenced by defects, particularly the interface defects between the layers of the thin films. The presence of defects results in changes in the broad band matrix intensity and in displacement of the PL emission maximum. (author)

  13. Nanosphere lithography applied to magnetic thin films

    Science.gov (United States)

    Gleason, Russell

    Magnetic nanostructures have widespread applications in many areas of physics and engineering, and nanosphere lithography has recently emerged as promising tool for the fabrication of such nanostructures. The goal of this research is to explore the magnetic properties of a thin film of ferromagnetic material deposited onto a hexagonally close-packed monolayer array of polystyrene nanospheres, and how they differ from the magnetic properties of a typical flat thin film. The first portion of this research focuses on determining the optimum conditions for depositing a monolayer of nanospheres onto chemically pretreated silicon substrates (via drop-coating) and the subsequent characterization of the deposited nanosphere layer with scanning electron microscopy. Single layers of permalloy (Ni80Fe20) are then deposited on top of the nanosphere array via DC magnetron sputtering, resulting in a thin film array of magnetic nanocaps. The coercivities of the thin films are measured using a home-built magneto-optical Kerr effect (MOKE) system in longitudinal arrangement. MOKE measurements show that for a single layer of permalloy (Py), the coercivity of a thin film deposited onto an array of nanospheres increases compared to that of a flat thin film. In addition, the coercivity increases as the nanosphere size decreases for the same deposited layer. It is postulated that magnetic exchange decoupling between neighboring nanocaps suppresses the propagation of magnetic domain walls, and this pinning of the domain walls is thought to be the primary source of the increase in coercivity.

  14. Simultaneous Automatic Electrochemical Detection of Zinc, Cadmium, Copper and Lead Ions in Environmental Samples Using a Thin-Film Mercury Electrode and an Artificial Neural Network

    Directory of Open Access Journals (Sweden)

    Jiri Kudr

    2014-12-01

    Full Text Available In this study a device for automatic electrochemical analysis was designed. A three electrodes detection system was attached to a positioning device, which enabled us to move the electrode system from one well to another of a microtitre plate. Disposable carbon tip electrodes were used for Cd(II, Cu(II and Pb(II ion quantification, while Zn(II did not give signal in this electrode configuration. In order to detect all mentioned heavy metals simultaneously, thin-film mercury electrodes (TFME were fabricated by electrodeposition of mercury on the surface of carbon tips. In comparison with bare electrodes the TMFEs had lower detection limits and better sensitivity. In addition to pure aqueous heavy metal solutions, the assay was also performed on mineralized rock samples, artificial blood plasma samples and samples of chicken embryo organs treated with cadmium. An artificial neural network was created to evaluate the concentrations of the mentioned heavy metals correctly in mixture samples and an excellent fit was observed (R2 = 0.9933.

  15. Thermal engineering of lead-free nanostructured CH3NH3SnCl3 perovskite material for thin-film solar cell

    Science.gov (United States)

    Moyez, Sk Abdul; Roy, Subhasis

    2018-01-01

    Perovskite solar cell is a kind of revolutionary investigation in the field of renewable energy which is capable of mitigates the deficiencies of silicon solar cell and its uprising efficiency can bring blessing to society. The presence of lead (Pb) in perovskite solar cell can make worst and negative impact on environment and is not desirable for our society. In this paper, general plans are anticipated by replacement of Pb with tin (Sn) in open atmosphere to fabricate the CH3NH3SnCl3 photovoltaic cells in chlorine (Cl)-rich environment. Excess uses of Cl has positive influences on morphological growth of the film and it also suppresses the oxidation tendency of tin (Sn) with existing oxygen in atmosphere and maintains same chemical atmosphere as bulk. Various characterization tools like X-ray diffraction, scanning electron microscope (SEM) have been used to study the effect of annealing temperature on crystal stricture, phase formation, impurities, and morphologies of the film. Finally, photovoltaic performance was reported using the solar simulator under 1.5 sun illumination.

  16. Tailoring electronic structure of polyazomethines thin films

    OpenAIRE

    J. Weszka; B. Hajduk; M. Domański; M. Chwastek; J. Jurusik; B. Jarząbek; H. Bednarski; P. Jarka

    2010-01-01

    Purpose: The aim of this work is to show how electronic properties of polyazomethine thin films deposited by chemical vapor deposition method (CVD) can be tailored by manipulating technological parameters of pristine films preparation as well as modifying them while the as-prepared films put into iodine atmosphere.Design/methodology/approach: The recent achievements in the field of designing and preparation methods to be used while preparing polymer photovoltaic solar cells or optoelectronic ...

  17. Quantitative MFM on superconducting thin films

    Energy Technology Data Exchange (ETDEWEB)

    Stopfel, Henry; Vock, Silvia; Shapoval, Tetyana; Neu, Volker; Wolff, Ulrike; Haindl, Silvia; Engelmann, Jan; Schaefer, Rudolf; Holzapfel, Bernhard; Schultz, Ludwig [IFW Dresden, Institute for Metallic Material (Germany); Inosov, Dmytro S. [Max Planck Institute for Solid State Research, Stuttgart (Germany)

    2012-07-01

    Quantitative interpretation of magnetic force microscopy (MFM) data is a challenge, because the measured signal is a convolution between the magnetization of the tip and the stray field emanated by the sample. It was established theoretically that the field distribution just above the surface of the superconductor can be well approximated by the stray field of a magnetic monopole. The description of the MFM tip, however, needs a second approximation. The temperature-dependent vortex-distribution images on a NbN thin film were fitted using two different tip models. Firstly, the magnetic tip was assumed to be a monopole that leads to the simple monopole-monopole model for the tip-sample interaction force. Performing a 2D fitting of the data with this model, we extracted λ, Δ and the vortex pinning force. Secondly, a geometrical model was applied to calculate the tip-transfer-function of the MFM tip using the numerical BEM method.

  18. Electrochemical fabrication of nanoporous polypyrrole thin films

    International Nuclear Information System (INIS)

    Li Mei; Yuan Jinying; Shi Gaoquan

    2008-01-01

    Polypyrrole thin films with pores in nanometer scale were synthesized by direct electrochemical oxidation of pyrrole in a mixed electrolyte of isopropyl alcohol, boron trifluoride diethyl etherate, sodium dodecylsulfonate and poly(ethylene glycol) using well-aligned ZnO nanowires arrays as templates. The thin films exhibit high conductivity of ca. σ rt ∼ 20.5 s/cm and can be driven to bend during redox processes in 1.0 M lithium perchlorate aqueous solution. The movement rate of an actuator based on this nanoporous film was measured to be over 90 o /s at a driving potential of 0.8 V (vs. Ag/AgCl)

  19. Polymer surfaces, interfaces and thin films

    Energy Technology Data Exchange (ETDEWEB)

    Stamm, M [Max-Planck-Institut fuer Polymerforschung, Mainz (Germany)

    1996-11-01

    Neutron reflectometry can be used in various ways to investigate surfaces, interfaces and thin films of polymers. Its potential comes mostly from the possibilities offered by selective deuteration, where a particular component can be made visible with respect to its activity at the interface. In addition the depth resolution is much better than with most other direct techniques, and details of the profiles may be resolved. Several examples will be discussed including the segment diffusion at the interface between two polymer films, the determination of the narrow interfaces between incompatible polymer blends and the development of order in thin diblock copolymer films. (author) 10 figs., 2 tabs., 38 refs.

  20. Polymer surfaces, interfaces and thin films

    International Nuclear Information System (INIS)

    Stamm, M.

    1996-01-01

    Neutron reflectometry can be used in various ways to investigate surfaces, interfaces and thin films of polymers. Its potential comes mostly from the possibilities offered by selective deuteration, where a particular component can be made visible with respect to its activity at the interface. In addition the depth resolution is much better than with most other direct techniques, and details of the profiles may be resolved. Several examples will be discussed including the segment diffusion at the interface between two polymer films, the determination of the narrow interfaces between incompatible polymer blends and the development of order in thin diblock copolymer films. (author) 10 figs., 2 tabs., 38 refs

  1. Preparation and properties of low resistivity molybdenum silicide thin films

    International Nuclear Information System (INIS)

    Beddies, G.; Hofmann, K.; Bretschneider, W.; Zscheile, H.D.; Bogdanowa, P.; Helms, H.; Wickleder, K.H.

    1983-01-01

    Using different sputtering methods and target variants Mo/Si mixed films are prepared. After the deposition these thin films are amorphous. Isothermal annealing in vacuum leads to the formation of crystalline phases. The crystallization of the hexagonal phase of MoSi 2 is connected with an increase in stress. The formation of the tetragonal phase causes a great decrease of the specific resistance

  2. Simulated Thin-Film Growth and Imaging

    Science.gov (United States)

    Schillaci, Michael

    2001-06-01

    Thin-films have become the cornerstone of the electronics, telecommunications, and broadband markets. A list of potential products includes: computer boards and chips, satellites, cell phones, fuel cells, superconductors, flat panel displays, optical waveguides, building and automotive windows, food and beverage plastic containers, metal foils, pipe plating, vision ware, manufacturing equipment and turbine engines. For all of these reasons a basic understanding of the physical processes involved in both growing and imaging thin-films can provide a wonderful research project for advanced undergraduate and first-year graduate students. After producing rudimentary two- and three-dimensional thin-film models incorporating ballsitic deposition and nearest neighbor Coulomb-type interactions, the QM tunneling equations are used to produce simulated scanning tunneling microscope (SSTM) images of the films. A discussion of computational platforms, languages, and software packages that may be used to accomplish similar results is also given.

  3. Restructuring in block copolymer thin films

    DEFF Research Database (Denmark)

    Posselt, Dorthe; Zhang, Jianqi; Smilgies, Detlef-M.

    2017-01-01

    Block copolymer (BCP) thin films have been proposed for a number of nanotechnology applications, such as nanolithography and as nanotemplates, nanoporous membranes and sensors. Solvent vapor annealing (SVA) has emerged as a powerful technique for manipulating and controlling the structure of BCP...... thin films, e.g., by healing defects, by altering the orientation of the microdomains and by changing the morphology. Due to high time resolution and compatibility with SVA environments, grazing-incidence small-angle X-ray scattering (GISAXS) is an indispensable technique for studying the SVA process......, providing information of the BCP thin film structure both laterally and along the film normal. Especially, state-of-the-art combined GISAXS/SVA setups at synchrotron sources have facilitated in situ and real-time studies of the SVA process with a time resolution of a few seconds, giving important insight...

  4. Nanostructured thin films as functional coatings

    Energy Technology Data Exchange (ETDEWEB)

    Lazar, Manoj A; Tadvani, Jalil K; Tung, Wing Sze; Lopez, Lorena; Daoud, Walid A, E-mail: Walid.Daoud@sci.monash.edu.au [School of Applied Sciences and Engineering, Monash University, Churchill, VIC 3842 (Australia)

    2010-06-15

    Nanostructured thin films is one of the highly exploiting research areas particularly in applications such as photovoltaics, photocatalysis and sensor technologies. Highly tuned thin films, in terms of thickness, crystallinity, porosity and optical properties, can be fabricated on different substrates using the sol-gel method, chemical solution deposition (CSD), electrochemical etching, along with other conventional methods such as chemical vapour deposition (CVD) and physical vapour deposition (PVD). The above mentioned properties of these films are usually characterised using surface analysis techniques such as XRD, SEM, TEM, AFM, ellipsometry, electrochemistry, SAXS, reflectance spectroscopy, STM, XPS, SIMS, ESCA, X-ray topography and DOSY-NMR. This article presents a short review of the preparation and characterisation of thin films of nanocrystalline titanium dioxide and modified silicon as well as their application in solar cells, water treatment, water splitting, self cleaning fabrics, sensors, optoelectronic devices and lab on chip systems.

  5. DC magnetron sputtering prepared Ag-C thin film anode for thin film lithium ion microbatteries

    International Nuclear Information System (INIS)

    Li, Y.; Tu, J.P.; Shi, D.Q.; Huang, X.H.; Wu, H.M.; Yuan, Y.F.; Zhao, X.B.

    2007-01-01

    An Ag-C thin film was prepared by DC magnetron co-sputtering, using pure silver and graphite as the targets. The microstructure and morphology of the deposited thin film were characterized by X-ray diffraction (XRD) and transmission electron microscopy (TEM). Electrochemical performances of the Ag-C thin film anode were investigated by means of discharge/charge and cyclic voltammogram (CV) tests in model cells. The electrochemical impedance spectrum (EIS) characteristics and the chemical diffusion coefficient, D Li of the Ag-C thin film electrode at different discharging states were discussed. It was believed that the excellent cycling performance of the Ag-C electrode was ascribed to the good conductivity of silver and the volume stability of the thin film

  6. Microscopic local fatigue in PZT thin films

    International Nuclear Information System (INIS)

    Li, B S; Wu, A; Vilarinho, P M

    2007-01-01

    The reduction in switchable polarization during fatigue largely limits the application of PZT thin films in ferroelectric nonvolatile memories. So, it is very important to understand the fatigue mechanism in PZT films, especially at a nanoscale level. In this paper, nanoscale fatigue properties in PZT thin films have been studied by piezoresponse force microscopy and local piezoloops. It has been found that a piezoloop obtained on a fatigued point exhibits a much more pinched shape and a local imprint phenomenon is observed after severe fatigue. Furthermore, the domain structure evolves from a simple single-peak profile to a complex fluctuant one. However, there is only some shift of the piezoloop when a unipolar field with the same amplitude is applied on the film. The available experimental data show that there exist obvious domain wall pinning and injection of electrons into the film during fatigue. Finally, a schematic illustration is suggested to explain the possible fatigue mechanism

  7. Optical constant of thin gold films

    DEFF Research Database (Denmark)

    Yakubovsky, D. I.; Fedyanin, D. Yu; Arsenin, A. V.

    2017-01-01

    The performance of metal-based devices is limited by ohmic losses in the metal, which are determined by electron scattering. The structural properties of gold thin films also play an important role in the film quality, which may affect its' optical properties and the overall capability...... and spectroscopic ellipsometry, the structural morphology and optical properties of polycrystalline gold thin films (fabricated by e-beam deposition at a low sputtering rate smooth gold) in the thickness range of 20 - 200 nm. By extracting the real and imaginary dielectric function and the Drude parameter...... of the device. At the same time, metal films of different thicknesses are needed for different applications and, since these films are polycrystalline, their internal properties and surface roughness can greatly vary from one thickness to another. In this work, we study, using atomic force microscopy...

  8. Thermal conductivity of nanoscale thin nickel films

    Institute of Scientific and Technical Information of China (English)

    YUAN Shiping; JIANG Peixue

    2005-01-01

    The inhomogeneous non-equilibrium molecular dynamics (NEMD) scheme is applied to model phonon heat conduction in thin nickel films. The electronic contribution to the thermal conductivity of the film is deduced from the electrical conductivity through the use of the Wiedemann-Franz law. At the average temperature of T = 300 K, which is lower than the Debye temperature ()D = 450 K,the results show that in a film thickness range of about 1-11 nm, the calculated cross-plane thermal conductivity decreases almost linearly with the decreasing film thickness, exhibiting a remarkable reduction compared with the bulk value. The electrical and thermal conductivities are anisotropic in thin nickel films for the thickness under about 10 nm. The phonon mean free path is estimated and the size effect on the thermal conductivity is attributed to the reduction of the phonon mean free path according to the kinetic theory.

  9. Magnetostrictive thin films prepared by RF sputtering

    International Nuclear Information System (INIS)

    Carabias, I.; Martinez, A.; Garcia, M.A.; Pina, E.; Gonzalez, J.M.; Hernando, A.; Crespo, P.

    2005-01-01

    Fe 80 B 20 thin films have been prepared by ion beam sputtering magnetron on room temperature. The films were fabricated on different substrates to compare the different magnetic and structural properties. In particular the growth of films on flexible substrates (PDMS, Kapton) has been studied to allow a simple integration of the system in miniaturized magnetostrictive devices. X-ray diffraction patterns indicate that films are mainly amorphous although the presence of some Fe nanoparticles cannot be ruled out. The coercive field of thin films ranges between 15 and 35 Oe, depending on substrate. Magnetostriction measurements indicate the strong dependence of the saturation magnetostriction with the substrate. Samples on flexible substrates exhibit a better performance than samples deposited onto glass substrates

  10. Critical behavior of ferromagnetic Ising thin films

    International Nuclear Information System (INIS)

    Cossio, P.; Mazo-Zuluaga, J.; Restrepo, J.

    2006-01-01

    In the present work, we study the magnetic properties and critical behavior of simple cubic ferromagnetic thin films. We simulate LxLxd films with semifree boundary conditions on the basis of the Monte Carlo method and the Ising model with nearest neighbor interactions. A Metropolis dynamics was implemented to carry out the energy minimization process. For different film thickness, in the nanometer range, we compute the temperature dependence of the magnetization, the magnetic susceptibility and the fourth order Binder's cumulant. Bulk and surface contributions of these quantities are computed in a differentiated fashion. Additionally, according to finite size scaling theory, we estimate the critical exponents for the correlation length, magnetic susceptibility, and magnetization. Results reveal a strong dependence of critical temperature and critical exponents on the film thickness. The obtained critical exponents are finally compared to those reported in literature for thin films

  11. Repulsive effects of hydrophobic diamond thin films on biomolecule detection

    Energy Technology Data Exchange (ETDEWEB)

    Ruslinda, A. Rahim, E-mail: ruslindarahim@gmail.com [Institute of Nano Electronic Engineering, Universiti Malaysia Perlis, Jln Kgr-Alor Setar, Seriab, 01000 Kangar, Perlis (Malaysia); Department of Nano Science and Nano Engineering, School of Advance Science and Engineering, Ohkubo 3-4-1, Shinjuku, 169-8555 Tokyo (Japan); Ishiyama, Y. [Department of Nano Science and Nano Engineering, School of Advance Science and Engineering, Ohkubo 3-4-1, Shinjuku, 169-8555 Tokyo (Japan); Penmatsa, V. [Department of Mechanical and Materials Engineering, Florida International University, 10555 West Flagler Street, Miami, FL 33174 (United States); Ibori, S.; Kawarada, H. [Department of Nano Science and Nano Engineering, School of Advance Science and Engineering, Ohkubo 3-4-1, Shinjuku, 169-8555 Tokyo (Japan)

    2015-02-15

    Highlights: • We report the effect of fluorine plasma treatment on diamond thin film to resist the nonspecific adsorption of biomolecules. • The diamond thin film were highly hydrophobic with a surface energy value of ∼25 mN/m. • The repulsive effect shows excellent binding efficiency for both DNA and HIV-1 Tat protein. - Abstract: The repulsive effect of hydrophobic diamond thin film on biomolecule detection, such as single-nucleotide polymorphisms and human immunodeficiency virus type 1 trans-activator of transcription peptide protein detection, was investigated using a mixture of a fluorine-, amine-, and hydrogen-terminated diamond surfaces. These chemical modifications lead to the formation of a surface that effectively resists the nonspecific adsorption of proteins and other biomolecules. The effect of fluorine plasma treatment on elemental composition was also investigated via X-ray photoelectron spectroscopy (XPS). XPS results revealed a fluorocarbon layer on the diamond thin films. The contact angle measurement results indicated that the fluorine-treated diamond thin films were highly hydrophobic with a surface energy value of ∼25 mN/m.

  12. Repulsive effects of hydrophobic diamond thin films on biomolecule detection

    International Nuclear Information System (INIS)

    Ruslinda, A. Rahim; Ishiyama, Y.; Penmatsa, V.; Ibori, S.; Kawarada, H.

    2015-01-01

    Highlights: • We report the effect of fluorine plasma treatment on diamond thin film to resist the nonspecific adsorption of biomolecules. • The diamond thin film were highly hydrophobic with a surface energy value of ∼25 mN/m. • The repulsive effect shows excellent binding efficiency for both DNA and HIV-1 Tat protein. - Abstract: The repulsive effect of hydrophobic diamond thin film on biomolecule detection, such as single-nucleotide polymorphisms and human immunodeficiency virus type 1 trans-activator of transcription peptide protein detection, was investigated using a mixture of a fluorine-, amine-, and hydrogen-terminated diamond surfaces. These chemical modifications lead to the formation of a surface that effectively resists the nonspecific adsorption of proteins and other biomolecules. The effect of fluorine plasma treatment on elemental composition was also investigated via X-ray photoelectron spectroscopy (XPS). XPS results revealed a fluorocarbon layer on the diamond thin films. The contact angle measurement results indicated that the fluorine-treated diamond thin films were highly hydrophobic with a surface energy value of ∼25 mN/m

  13. A Variational approach to thin film hydrodynamics of binary mixtures

    KAUST Repository

    Xu, Xinpeng

    2015-02-04

    In order to model the dynamics of thin films of mixtures, solutions, and suspensions, a thermodynamically consistent formulation is needed such that various coexisting dissipative processes with cross couplings can be correctly described in the presence of capillarity, wettability, and mixing effects. In the present work, we apply Onsager\\'s variational principle to the formulation of thin film hydrodynamics for binary fluid mixtures. We first derive the dynamic equations in two spatial dimensions, one along the substrate and the other normal to the substrate. Then, using long-wave asymptotics, we derive the thin film equations in one spatial dimension along the substrate. This enables us to establish the connection between the present variational approach and the gradient dynamics formulation for thin films. It is shown that for the mobility matrix in the gradient dynamics description, Onsager\\'s reciprocal symmetry is automatically preserved by the variational derivation. Furthermore, using local hydrodynamic variables, our variational approach is capable of introducing diffusive dissipation beyond the limit of dilute solute. Supplemented with a Flory-Huggins-type mixing free energy, our variational approach leads to a thin film model that treats solvent and solute in a symmetric manner. Our approach can be further generalized to include more complicated free energy and additional dissipative processes.

  14. Thin Films in the Photovoltaic Industry

    International Nuclear Information System (INIS)

    Jaeger-Waldau, A.

    2008-03-01

    In the past years, the yearly world market growth rate for Photovoltaics was an average of more than 40%, which makes it one of the fastest growing industries at present. Business analysts predict the market volume to increase to 40 billion euros in 2010 and expect rising profit margins and lower prices for consumers at the same time. Today PV is still dominated by wafer based Crystalline Silicon Technology as the 'working horse' in the global market, but thin films are gaining market shares. For 2007 around 12% are expected. The current silicon shortage and high demand has kept prices higher than anticipated from the learning curve experience and has widened the windows of opportunities for thin film solar modules. Current production capacity estimates for thin films vary between 3 and 6 GW in 2010, representing a 20% market share for these technologies. Despite the higher growth rates for thin film technologies compared with the industry average, Thin Film Photovoltaic Technologies are still facing a number of challenges to maintain this growth and increase market shares. The four main topics which were discussed during the workshop were: Potential for cost reduction; Standardization; Recycling; Performance over the lifetime.

  15. Lithium ion intercalation into thin film anatase

    International Nuclear Information System (INIS)

    Kundrata, I.; Froehlich, K.; Ballo, P.

    2015-01-01

    The aim of this work is to find the optimal parameters for thin film TiO 2 anatase grown by Atomic layer deposition (ALD) for use as electrode in lithium ion batteries. Two parameters, the optimal film thickness and growth conditions are aimed for. Optimal film thickness for achieving optimum between capacity gained from volume and capacity gained by changing of the intercalation constant and optimal growth conditions for film conformity on structured substrates with high aspect ratio. Here we presents first results from this ongoing research and discuss future outlooks. (authors)

  16. Ion beam-based characterization of multicomponent oxide thin films and thin film layered structures

    International Nuclear Information System (INIS)

    Krauss, A.R.; Rangaswamy, M.; Lin, Yuping; Gruen, D.M.; Schultz, J.A.; Schmidt, H.K.; Chang, R.P.H.

    1992-01-01

    Fabrication of thin film layered structures of multi-component materials such as high temperature superconductors, ferroelectric and electro-optic materials, and alloy semiconductors, and the development of hybrid materials requires understanding of film growth and interface properties. For High Temperature Superconductors, the superconducting coherence length is extremely short (5--15 Angstrom), and fabrication of reliable devices will require control of film properties at extremely sharp interfaces; it will be necessary to verify the integrity of thin layers and layered structure devices over thicknesses comparable to the atomic layer spacing. Analytical techniques which probe the first 1--2 atomic layers are therefore necessary for in-situ characterization of relevant thin film growth processes. However, most surface-analytical techniques are sensitive to a region within 10--40 Angstrom of the surface and are physically incompatible with thin film deposition and are typically restricted to ultra high vacuum conditions. A review of ion beam-based analytical methods for the characterization of thin film and multi-layered thin film structures incorporating layers of multicomponent oxides is presented. Particular attention will be paid to the use of time-of-flight techniques based on the use of 1- 15 key ion beams which show potential for use as nondestructive, real-time, in-situ surface diagnostics for the growth of multicomponent metal and metal oxide thin films

  17. Organic thin films and surfaces directions for the nineties

    CERN Document Server

    Ulman, Abraham

    1995-01-01

    Physics of Thin Films has been one of the longest running continuing series in thin film science consisting of 20 volumes since 1963. The series contains some of the highest quality studies of the properties ofvarious thin films materials and systems.In order to be able to reflect the development of todays science and to cover all modern aspects of thin films, the series, beginning with Volume 20, will move beyond the basic physics of thin films. It will address the most important aspects of both inorganic and organic thin films, in both their theoretical as well as technological aspects. Ther

  18. Magnetic characterisation of longitudinal thin film media

    International Nuclear Information System (INIS)

    Dova, P.

    1998-09-01

    Magnetic characterisation techniques, as applied to longitudinal thin film media, have been investigated. These included the study of the differentials of the remanence curves, the delta-M plot and the examination of the critical volumes. Several thin film structures, which are currently used or are being considered for future media applications, have been examined using these techniques. Most of the films were Co-alloys with the exception of a set of Barium ferrite films. Both monolayer and multilayer structures were studied. It was found that the study of activation volumes provides a better insight into the reversal mechanisms of magnetic media, especially in the case of complex structures such as multilayer films and films with bicrystal microstructure. Furthermore, an evaluation study of different methods of determining critical volumes showed that the method using time dependence measurements and the micromagnetic approach is the most appropriate. The magnetic characteristics of the thin film media under investigation were correlated with their microstructure and, where possible, with their noise performance. Magnetic force microscopy was also used for acquiring quasi-domain images in the ac-demagnetised state. It was found that in all Co-alloy films the dominant intergranular coupling is magnetising in nature, the level of which is governed by the Cr content in the magnetic layer. In the case of laminated media it was found that when non-magnetic spacers are used, the nature of the interlayer coupling depends on the spacer thickness. In double layer structures with no spacer, the top layer replicates the crystallographic texture of the bottom layer, and the overall film properties are a combination of the two layers. In bicrystal films the coupling is determined by the Cr segregation in the grain boundaries. Furthermore, the presence of stacking faults in bicrystal films deteriorates their thermal stability, but can be prevented by improving the epitaxial

  19. Polycaprolactone thin films for retinal tissue engineering and drug delivery

    Science.gov (United States)

    Steedman, Mark Rory

    This dissertation focuses on the development of polycaprolactone thin films for retinal tissue engineering and drug delivery. We combined these thin films with techniques such as micro and nanofabrication to develop treatments for age-related macular degeneration (AMD), a disease that leads to the death of rod and cone photoreceptors. Current treatments are only able to slow or limit the progression of the disease, and photoreceptors cannot be regenerated or replaced by the body once lost. The first experiments presented focus on a potential treatment for AMD after photoreceptor death has occurred. We developed a polymer thin film scaffold technology to deliver retinal progenitor cells (RPCs) to the affected area of the eye. Earlier research showed that RPCs destined to become photoreceptors are capable of incorporating into a degenerated retina. In our experiments, we showed that RPC attachment to a micro-welled polycaprolactone (PCL) thin film surface enhanced the differentiation of these cells toward a photoreceptor fate. We then used our PCL thin films to develop a drug delivery device capable of sustained therapeutic release over a multi-month period that would maintain an effective concentration of the drug in the eye and eliminate the need for repeated intraocular injections. We first investigated the biocompatibility of PCL in the rabbit eye. We injected PCL thin films into the anterior chamber or vitreous cavity of rabbit eyes and monitored the animals for up to 6 months. We found that PCL thin films were well tolerated in the rabbit eye, showing no signs of chronic inflammation due to the implant. We then developed a multilayered thin film device containing a microporous membrane. We loaded these devices with lyophilized proteins and quantified drug elution for 10 weeks, finding that both bovine serum albumin and immunoglobulin G elute from these devices with zero order release kinetics. These experiments demonstrate that PCL is an extremely useful

  20. Vibration welding system with thin film sensor

    Science.gov (United States)

    Cai, Wayne W; Abell, Jeffrey A; Li, Xiaochun; Choi, Hongseok; Zhao, Jingzhou

    2014-03-18

    A vibration welding system includes an anvil, a welding horn, a thin film sensor, and a process controller. The anvil and horn include working surfaces that contact a work piece during the welding process. The sensor measures a control value at the working surface. The measured control value is transmitted to the controller, which controls the system in part using the measured control value. The thin film sensor may include a plurality of thermopiles and thermocouples which collectively measure temperature and heat flux at the working surface. A method includes providing a welder device with a slot adjacent to a working surface of the welder device, inserting the thin film sensor into the slot, and using the sensor to measure a control value at the working surface. A process controller then controls the vibration welding system in part using the measured control value.

  1. Solid surfaces, interfaces and thin films

    CERN Document Server

    Lüth, Hans

    2015-01-01

    This book emphasises both experimental and theoretical aspects of surface, interface and thin-film physics. As in previous editions the preparation of surfaces and thin films, their atomic and morphological structure, their vibronic and electronic properties as well as fundamentals of adsorption are treated. Because of their importance in modern information technology and nanostructure research, particular emphasis is paid to electronic surface and interface states, semiconductor space charge layers and heterostructures. A special chapter of the book is devoted to collective phenomena at interfaces and in thin films such as superconductivity and magnetism. The latter topic includes the meanwhile important issues giant magnetoresistance and spin-transfer torque mechanism, both effects being of high interest in information technology. In this new edition, for the first time, the effect of spin-orbit coupling on surface states is treated. In this context the class of the recently detected topological insulators,...

  2. Thin films for the manipulation of light

    International Nuclear Information System (INIS)

    Piegari, Angela; Sytchkova, Anna

    2015-01-01

    The manipulation of light is typically accomplished by a series of optical surfaces on which the incident beam is reflected, or through which the beam is transmitted. Thin film coatings help to modify the behavior of such surfaces for obtaining the desired result: antireflection coatings to reduce reflection losses, high-reflectance mirrors, filters to divide or combine beams of different wavelengths, and many other types. The amount of light that is transmitted or reflected depends on the optical parameters of the materials and on interference phenomena in thin-film structures. Dedicated software is available to design the proper coating for each requirement. There are several applications of optical thin films, many of them are useful in the everyday life, many others are dedicated to scientific purposes, as will be described in this paper [it

  3. Thin Film Photovoltaic/Thermal Solar Panels

    Institute of Scientific and Technical Information of China (English)

    David JOHNSTON

    2008-01-01

    A solar panel is described.in which thin films of semiconductor are deposited onto a metal substrate.The semiconductor-metal combination forms a thin film photovoltaic cell,and also acts as a reflector,absorber tandem, which acts as a solar selective surface,thus enhancing the solar thermal performance of the collector plate.The use of thin films reduces the distance heat is required to flow from the absorbing surface to the metal plate and heat exchange conduits.Computer modelling demonstrated that,by suitable choice of materials,photovohaic efficiency call be maintained,with thermal performance slishtly reduced,compared to that for thermal-only panels.By grading the absorber layer-to reduce the band gap in the lower region-the thermal performance can be improved,approaching that for a thermal-only solar panel.

  4. Nanostructured thin films and coatings mechanical properties

    CERN Document Server

    2010-01-01

    The first volume in "The Handbook of Nanostructured Thin Films and Coatings" set, this book concentrates on the mechanical properties, such as hardness, toughness, and adhesion, of thin films and coatings. It discusses processing, properties, and performance and provides a detailed analysis of theories and size effects. The book presents the fundamentals of hard and superhard nanocomposites and heterostructures, assesses fracture toughness and interfacial adhesion strength of thin films and hard nanocomposite coatings, and covers the processing and mechanical properties of hybrid sol-gel-derived nanocomposite coatings. It also uses nanomechanics to optimize coatings for cutting tools and explores various other coatings, such as diamond, metal-containing amorphous carbon nanostructured, and transition metal nitride-based nanolayered multilayer coatings.

  5. Solid Surfaces, Interfaces and Thin Films

    CERN Document Server

    Lüth, Hans

    2010-01-01

    This book emphasises both experimental and theoretical aspects of surface, interface and thin film physics. As in previous editions the preparation of surfaces and thin films, their atomic and morphological, their vibronic and electronic properties as well as fundamentals of adsorption are treated. Because of their importance in modern information technology and nanostructure physics particular emphasis is paid to electronic surface and interface states, semiconductor space charge layers and heterostructures as well as to superconductor/semiconductor interfaces and magnetic thin films. The latter topic was significantly extended in this new edition by more details about the giant magnetoresistance and a section about the spin-transfer torque mechanism including one new problem as exercise. Two new panels about Kerr-effect and spin-polarized scanning tunnelling microscopy were added, too. Furthermore, the meanwhile important group III-nitride surfaces and high-k oxide/semiconductor interfaces are shortly discu...

  6. Domains in Ferroic Crystals and Thin Films

    CERN Document Server

    Tagantsev, Alexander K; Fousek, Jan

    2010-01-01

    Domains in Ferroic Crystals and Thin Films presents experimental findings and theoretical understanding of ferroic (non-magnetic) domains developed during the past 60 years. It addresses the situation by looking specifically at bulk crystals and thin films, with a particular focus on recently-developed microelectronic applications and methods for observation of domains with techniques such as scanning force microscopy, polarized light microscopy, scanning optical microscopy, electron microscopy, and surface decorating techniques. Domains in Ferroic Crystals and Thin Films covers a large area of material properties and effects connected with static and dynamic properties of domains, which are extremely relevant to materials referred to as ferroics. In most solid state physics books, one large group of ferroics is customarily covered: those in which magnetic properties play a dominant role. Numerous books are specifically devoted to magnetic ferroics and cover a wide spectrum of magnetic domain phenomena. In co...

  7. Thin film oxygen partial pressure sensor

    Science.gov (United States)

    Wortman, J. J.; Harrison, J. W.; Honbarrier, H. L.; Yen, J.

    1972-01-01

    The development is described of a laboratory model oxygen partial pressure sensor using a sputtered zinc oxide thin film. The film is operated at about 400 C through the use of a miniature silicon bar. Because of the unique resistance versus temperature relation of the silicon bar, control of the operational temperature is achieved by controlling the resistance. A circuit for accomplishing this is described. The response of sputtered zinc oxide films of various thicknesses to oxygen, nitrogen, argon, carbon dioxide, and water vapor caused a change in the film resistance. Over a large range, film conductance varied approximately as the square root of the oxygen partial pressure. The presence of water vapor in the gas stream caused a shift in the film conductance at a given oxygen partial pressure. A theoretical model is presented to explain the characteristic features of the zinc oxide response to oxygen.

  8. Magnetite thin films: A simulational approach

    International Nuclear Information System (INIS)

    Mazo-Zuluaga, J.; Restrepo, J.

    2006-01-01

    In the present work the study of the magnetic properties of magnetite thin films is addressed by means of the Monte Carlo method and the Ising model. We simulate LxLxd magnetite thin films (d being the film thickness and L the transversal linear dimension) with periodic boundary conditions along transversal directions and free boundary conditions along d direction. In our model, both the three-dimensional inverse spinel structure and the interactions scheme involving tetrahedral and octahedral sites have been considered in a realistic way. Results reveal a power-law dependence of the critical temperature with the film thickness accordingly by an exponent ν=0.81 and ruled out by finite-size scaling theory. Estimates for the critical exponents of the magnetization and the specific heat are finally presented and discussed

  9. Feasibility Study of Thin Film Thermocouple Piles

    Science.gov (United States)

    Sisk, R. C.

    2001-01-01

    Historically, thermopile detectors, generators, and refrigerators based on bulk materials have been used to measure temperature, generate power for spacecraft, and cool sensors for scientific investigations. New potential uses of small, low-power, thin film thermopiles are in the area of microelectromechanical systems since power requirements decrease as electrical and mechanical machines shrink in size. In this research activity, thin film thermopile devices are fabricated utilizing radio frequency sputter coating and photoresist lift-off techniques. Electrical characterizations are performed on two designs in order to investigate the feasibility of generating small amounts of power, utilizing any available waste heat as the energy source.

  10. Novel chemical analysis for thin films

    International Nuclear Information System (INIS)

    Usui, Toshio; Kamei, Masayuki; Aoki, Yuji; Morishita, Tadataka; Tanaka, Shoji

    1991-01-01

    Scanning electron microscopy and total-reflection-angle X-ray spectroscopy (SEM-TRAXS) was applied for fluorescence X-ray analysis of 50A- and 125A-thick Au thin films on Si(100). The intensity of the AuM line (2.15 keV) emitted from the Au thin films varied as a function of the take-off angle (θ t ) with respect to the film surface; the intensity of AuM line from the 125A-thick Au thin film was 1.5 times as large as that of SiK α line (1.74 keV) emitted from the Si substrate when θ t = 0deg-3deg, in the vicinity of a critical angle for total external reflection of the AuM line at Si (0.81deg). In addition, the intensity of the AuM line emitted from the 50A-thick Au thin film was also sufficiently strong for chemical analysis. (author)

  11. Perovskite Thin Films via Atomic Layer Deposition

    KAUST Repository

    Sutherland, Brandon R.; Hoogland, Sjoerd; Adachi, Michael M.; Kanjanaboos, Pongsakorn; Wong, Chris T. O.; McDowell, Jeffrey J.; Xu, Jixian; Voznyy, Oleksandr; Ning, Zhijun; Houtepen, Arjan J.; Sargent, Edward H.

    2014-01-01

    © 2014 Wiley-VCH Verlag GmbH & Co. KGaA. (Graph Presented) A new method to deposit perovskite thin films that benefit from the thickness control and conformality of atomic layer deposition (ALD) is detailed. A seed layer of ALD PbS is place-exchanged with PbI2 and subsequently CH3NH3PbI3 perovskite. These films show promising optical properties, with gain coefficients of 3200 ± 830 cm-1.

  12. Perovskite Thin Films via Atomic Layer Deposition

    KAUST Repository

    Sutherland, Brandon R.

    2014-10-30

    © 2014 Wiley-VCH Verlag GmbH & Co. KGaA. (Graph Presented) A new method to deposit perovskite thin films that benefit from the thickness control and conformality of atomic layer deposition (ALD) is detailed. A seed layer of ALD PbS is place-exchanged with PbI2 and subsequently CH3NH3PbI3 perovskite. These films show promising optical properties, with gain coefficients of 3200 ± 830 cm-1.

  13. Mechanics of evolving thin film structures

    Science.gov (United States)

    Liang, Jim

    In the Stranski-Krastanov system, the lattice mismatch between the film and the substrate causes the film to break into islands. During annealing, both the surface energy and the elastic energy drive the islands to coarsen. Motivated by several related studies, we suggest that stable islands should form when a stiff ceiling is placed at a small gap above the film. We show that the role of elasticity is reversed: with the ceiling, the total elastic energy stored in the system increases as the islands coarsen laterally. Consequently, the islands select an equilibrium size to minimize the combined elastic energy and surface energy. In lithographically-induced self-assembly, when a two-phase fluid confined between parallel substrates is subjected to an electric field, one phase can self-assemble into a triangular lattice of islands in another phase. We describe a theory of the stability of the island lattice. The islands select the equilibrium diameter to minimize the combined interface energy and electrostatic energy. Furthermore, we study compressed SiGe thin film islands fabricated on a glass layer, which itself lies on a silicon wafer. Upon annealing, the glass flows, and the islands relax. A small island relaxes by in-plane expansion. A large island, however, wrinkles at the center before the in-plane relaxation arrives. The wrinkles may cause significant tensile stress in the island, leading to fracture. We model the island by the von Karman plate theory and the glass layer by the Reynolds lubrication theory. Numerical simulations evolve the in-plane expansion and the wrinkles simultaneously. We determine the critical island size, below which in-plane expansion prevails over wrinkling. Finally, in devices that integrate dissimilar materials in small dimensions, crack extension in one material often accompanies inelastic deformation in another. We analyze a channel crack advancing in an elastic film under tension, while an underlayer creeps. We use a two

  14. Mechanical integrity of thin films

    International Nuclear Information System (INIS)

    Hoffman, R.W.

    1979-01-01

    Mechanical considerations starting with the initial film deposition including questions of adhesion and grading the interface are reviewed. Growth stresses, limiting thickness, stress relief, control aging, and creep are described

  15. Achieving 3-D Nanoparticle Assembly in Nanocomposite Thin Films via Kinetic Control

    Energy Technology Data Exchange (ETDEWEB)

    Huang, Jingyu; Xiao, Yihan; Xu, Ting [UCB

    2017-02-20

    Nanocomposite thin films containing well-ordered nanoparticle (NP) assemblies are ideal candidates for the fabrication of metamaterials. Achieving 3-D assembly of NPs in nanocomposite thin films is thermodynamically challenging as the particle size gets similar to that of a single polymer chain. The entropic penalties of polymeric matrix upon NP incorporation leads to NP aggregation on the film surface or within the defects in the film. Controlling the kinetic pathways of assembly process provides an alternative path forward by arresting the system in nonequilibrium states. Here, we report the thin film 3-D hierarchical assembly of 20 nm NPs in supramolecules with a 30 nm periodicity. By mediating the NP diffusion kinetics in the supramolecular matrix, surface aggregation of NPs was suppressed and NPs coassemble with supramolecules to form new 3-D morphologies in thin films. The present studies opened a viable route to achieve designer functional composite thin films via kinetic control.

  16. Mesoscale simulations of confined Nafion thin films

    Science.gov (United States)

    Vanya, P.; Sharman, J.; Elliott, J. A.

    2017-12-01

    The morphology and transport properties of thin films of the ionomer Nafion, with thicknesses on the order of the bulk cluster size, have been investigated as a model system to explain the anomalous behaviour of catalyst/electrode-polymer interfaces in membrane electrode assemblies. We have employed dissipative particle dynamics (DPD) to investigate the interaction of water and fluorocarbon chains, with carbon and quartz as confining materials, for a wide range of operational water contents and film thicknesses. We found confinement-induced clustering of water perpendicular to the thin film. Hydrophobic carbon forms a water depletion zone near the film interface, whereas hydrophilic quartz results in a zone with excess water. There are, on average, oscillating water-rich and fluorocarbon-rich regions, in agreement with experimental results from neutron reflectometry. Water diffusivity shows increasing directional anisotropy of up to 30% with decreasing film thickness, depending on the hydrophilicity of the confining material. A percolation analysis revealed significant differences in water clustering and connectivity with the confining material. These findings indicate the fundamentally different nature of ionomer thin films, compared to membranes, and suggest explanations for increased ionic resistances observed in the catalyst layer.

  17. Processing of thin SU-8 films

    International Nuclear Information System (INIS)

    Keller, Stephan; Blagoi, Gabriela; Lillemose, Michael; Haefliger, Daniel; Boisen, Anja

    2008-01-01

    This paper summarizes the results of the process optimization for SU-8 films with thicknesses ≤5 µm. The influence of soft-bake conditions, exposure dose and post-exposure-bake parameters on residual film stress, structural stability and lithographic resolution was investigated. Conventionally, the SU-8 is soft-baked after spin coating to remove the solvent. After the exposure, a post-exposure bake at a high temperature T PEB ≥ 90 °C is required to cross-link the resist. However, for thin SU-8 films this often results in cracking or delamination due to residual film stress. The approach of the process optimization is to keep a considerable amount of the solvent in the SU-8 before exposure to facilitate photo-acid diffusion and to increase the mobility of the monomers. The experiments demonstrate that a replacement of the soft-bake by a short solvent evaporation time at ambient temperature allows cross-linking of the thin SU-8 films even at a low T PEB = 50 °C. Fourier-transform infrared spectroscopy is used to confirm the increased cross-linking density. The low thermal stress due to the reduced T PEB and the improved structural stability result in crack-free structures and solve the issue of delamination. The knowledge of the influence of different processing parameters on the responses allows the design of optimized processes for thin SU-8 films depending on the specific application

  18. Thin films prepared from tungstate glass matrix

    Energy Technology Data Exchange (ETDEWEB)

    Montanari, B.; Ribeiro, S.J.L.; Messaddeq, Y. [Departamento de Quimica Geral e Inorganica, Instituto de Quimica, Sao Paulo State University-UNESP, CP 355, CEP 14800-900, Araraquara, SP (Brazil); Li, M.S. [Instituto de Fisica, USP, CP 369, CEP 13560-970, Sao Carlos, SP (Brazil); Poirier, G. [Departamento de Ciencias Exatas, UNIFAL-MG, CEP 37130-000, Alfenas-MG (Brazil)], E-mail: gael@unifal-mg.edu.br

    2008-01-30

    Vitreous samples containing high concentrations of WO{sub 3} (above 40% M) have been used as a target to prepare thin films. Such films were deposited using the electron beam evaporation method onto soda-lime glass substrates. These films were characterized by X-ray diffraction (XRD), perfilometry, X-ray energy dispersion spectroscopy (EDS), M-Lines and UV-vis absorption spectroscopy. In this work, experimental parameters were established to obtain stable thin films showing a chemical composition close to the glass precursor composition and with a high concentration of WO{sub 3}. These amorphous thin films of about 4 {mu}m in thickness exhibit a deep blue coloration but they can be bleached by thermal treatment near the glass transition temperature. Such bleached films show several guided modes in the visible region and have a high refractive index. Controlled crystallization was realized and thus it was possible to obtain WO{sub 3} microcrystals in the amorphous phase.

  19. Infrared analysis of thin films: amorphous, hydrogenated carbon on silicon

    International Nuclear Information System (INIS)

    Jacob, Wolfgang; Keudell, Achim von; Schwarz-Selinger, Thomas

    2000-01-01

    The infrared analysis of thin films on a thick substrate is discussed using the example of plasma-deposited, amorphous, hydrogenated carbon layers (a-C:H) on silicon substrates. The framework for the optical analysis of thin films is presented. The main characteristic of thin film optics is the occurrence of interference effects due to the coherent superposition of light multiply reflected at the various internal and external interfaces of the optical system. These interference effects lead to a sinusoidal variation of the transmitted and reflected intensity. As a consequence, the Lambert-Beer law is not applicable for the determination of the absorption coefficient of thin films. Furthermore, observable changes of the transmission and reflection spectra occur in the vicinity of strong absorption bands due to the Kramers-Kronig relation. For a sound data evaluation these effects have to be included in the analysis. To be able to extract the full information contained in a measured optical thin film spectrum, an experimentally measured spectrum has to be simulated using the full formalism including the Kramers-Kronig relation. Infrared absorption spectra and the resulting k spectra in the range of the CH vibrational bands around 3000 cm -1 are presented for a variety of a-C:H layers. The shape and the total intensity of the peak are quite sensitive to the film structure. Soft, polymerlike hydrocarbon layers are characterized by a well structured, intense IR absorption band, while hard, amorphous, hydrogenated carbon layers exhibit a structureless, broad IR absorption band with relative low intensity. The k spectra of the CH vibrational bands can be considered as fingerprint for the type of a-C:H film. (author)

  20. Atomic Structure Control of Silica Thin Films on Pt(111)

    KAUST Repository

    Crampton, Andrew S; Ridge, Claron J.; Rö tzer, Marian David; Zwaschka, Gregor; Braun, Thomas; D'Elia, Valerio; Basset, Jean-Marie; Schweinberger, Florian Frank; Gü nther, Sebastian; Heiz, Ueli

    2015-01-01

    Metal oxide thin films grown on metal single crystals are commonly used to model heterogeneous catalyst supports. The structure and properties of thin silicon dioxide films grown on metal single crystals have only recently been thoroughly

  1. Interaction between depolarization effects, interface layer, and fatigue behavior in PZT thin film capacitors

    Science.gov (United States)

    Böttger, U.; Waser, R.

    2017-07-01

    The existence of non-ferroelectric regions in ferroelectric thin films evokes depolarization effects leading to a tilt of the P(E) hysteresis loop. The analysis of measured hysteresis of lead zirconate titanate (PZT) thin films is used to determine a depolarization factor which contains quantitative information about interfacial layers as well as ferroelectrically passive zones in the bulk. The derived interfacial capacitance is smaller than that estimated from conventional extrapolation techniques. In addition, the concept of depolarization is used for the investigation of fatigue behavior of PZT thin films indicating that the mechanism of seed inhibition, which is responsible for the effect, occurs in the entire film.

  2. Optical characterization of niobium pentoxide thin films

    International Nuclear Information System (INIS)

    Pawlicka, A.

    1996-01-01

    Thin films of Nb 2 O 5 were obtained by sol-gel method using ultrasonic irradiation and deposited by dip-coating technique. After calcination at temperatures superior than 500 deg C these films (300 nm thick) were characterized by cyclic voltametry and cronoamperometry. The memory measurements, color efficiency, optical density as a function of wave number and applied potential were effectuated to determine their electrochromic properties. The study of electrochromic properties of these films shows that the insertion process of lithium is reversible and changes their coloration from transparent (T=80%) to dark blue (T=20%). (author)

  3. Electrical resistivity of ferrimagnetic magnetite thin film

    International Nuclear Information System (INIS)

    Varshney, Dinesh; Yogi, A.; Kaurav, N.; Gupta, R.P.; Phase, D.M.

    2006-01-01

    We have grown Fe 3 O 4 (III) epitaxial film on Al 2 O 3 (0001) substrate by pulsed laser deposition, with thickness of 130 nm. X-ray diffraction studies of magnetite show the spinel cubic structure of film with preferential (III) orientation. The electrical resistivity measurement demonstrates that the properties of thin film of magnetite are basically similar to those of bulk magnetite and clearly shows semiconductor-insulator transition at Verwey transition temperature (≅140 K). We have found higher Verwey transition temperature when compared with earlier reports on similar type of system. Possible causes for increase in transition temperature are discussed. (author)

  4. Surface Plasmon Waves on Thin Metal Films.

    Science.gov (United States)

    Craig, Alan Ellsworth

    Surface-plasmon polaritons propagating on thin metal films bounded by dielectrics of nearly equal refractive indexes comprise two bound modes. Calculations indicate that, while the modes are degenerate on thick films, both the real and the imaginary components of the propagation constants for the modes split into two branches on successively thinner films. Considering these non-degenerate modes, the mode exhibiting a symmetric (antisymmetric) transverse profile of the longitudinally polarized electric field component, has propagation constant components both of which increase (decrease) with decreasing film thickness. Theoretical propagation constant eigenvalue (PCE) curves have been plotted which delineate this dependence of both propagation constant components on film thickness. By means of a retroreflecting, hemispherical glass coupler in an attenuated total reflection (ATR) configuration, light of wavelength 632.8 nm coupled to the modes of thin silver films deposited on polished glass substrates. Lorentzian lineshape dips in the plots of reflectance vs. angle of incidence indicate the presence of the plasmon modes. The real and imaginary components of the propagation constraints (i.e., the propagation constant and loss coefficient) were calculated from the angular positions and widths of the ATR resonances recorded. Films of several thicknesses were probed. Results which support the theoretically predicted curves were reported.

  5. New techniques for producing thin boron films

    International Nuclear Information System (INIS)

    Thomas, G.E.

    1988-01-01

    A review will be presented of methods for producing thin boron films using an electron gun. Previous papers have had the problem of spattering of the boron source during the evaporation. Methods for reducing this problem will also be presented. 12 refs., 4 figs

  6. Intelligent Processing of Ferroelectric Thin Films

    Science.gov (United States)

    1994-05-31

    unsatisfactory. To detect the electroopic effects of thin films deposited on opaque substrates a waveguide refractometry of category 3 was reported. An advantage...of the waveguide refractometry is its capability of resolving the change in ordinary index from the change in the extraordinary index. Some successes

  7. Amperometric Noise at Thin Film Band Electrodes

    DEFF Research Database (Denmark)

    Larsen, Simon T.; Heien, Michael L.; Taboryski, Rafael

    2012-01-01

    Background current noise is often a significant limitation when using constant-potential amperometry for biosensor application such as amperometric recordings of transmitter release from single cells through exocytosis. In this paper, we fabricated thin-film electrodes of gold and conductive...

  8. Stabilized thin film heterostructure for electrochemical applications

    DEFF Research Database (Denmark)

    2015-01-01

    The invention provides a method for the formation of a thin film multi-layered heterostructure upon a substrate, said method comprising the steps of: a. providing a substrate; b. depositing a buffer layer upon said substrate, said buffer layer being a layer of stable ionic conductor (B); c. depos...

  9. Reliability growth of thin film resistors contact

    Directory of Open Access Journals (Sweden)

    Lugin A. N.

    2010-10-01

    Full Text Available Necessity of resistive layer growth under the contact and in the contact zone of resistive element is shown in order to reduce peak values of current flow and power dissipation in the contact of thin film resistor, thereby to increase the resistor stability to parametric and catastrophic failures.

  10. Bilaterally Microstructured Thin Polydimethylsiloxane Film Production

    DEFF Research Database (Denmark)

    Vudayagiri, Sindhu; Yu, Liyun; Hassouneh, Suzan Sager

    2015-01-01

    Thin PDMS films with complex microstructures are used in the manufacturing of dielectric electro active polymer (DEAP) actuators, sensors and generators, to protect the metal electrode from large strains and to assure controlled actuation. The current manufacturing process at Danfoss Polypower A/...

  11. Flexible thin-film NFC tags

    NARCIS (Netherlands)

    Myny, K.; Tripathi, A.K.; Steen, J.L. van der; Cobb, B.

    2015-01-01

    Thin-film transistor technologies have great potential to become the key technology for leafnode Internet of Things by utilizing the NFC protocol as a communication medium. The main requirements are manufacturability on flexible substrates at a low cost while maintaining good device performance

  12. Magnetic surfaces, thin films, and multilayers

    International Nuclear Information System (INIS)

    Parkin, S.S.P.; Renard, J.P.; Shinjo, T.; Zinn, W.

    1992-01-01

    This paper details recent developments in the magnetism of surfaces, thin films and multilayers. More than 20 invited contributions and more than 60 contributed papers attest to the great interest and vitality of this subject. In recent years the study of magnetic surfaces, thin films and multilayers has undergone a renaissance, partly motivated by the development of new growth and characterization techniques, but perhaps more so by the discovery of many exciting new properties, some quite unanticipated. These include, most recently, the discovery of enormous values of magnetoresistance in magnetic multilayers far exceeding those found in magnetic single layer films and the discovery of oscillatory interlayer coupling in transition metal multilayers. These experimental studies have motivated much theoretical work. However these developments are to a large extent powered by materials engineering and our ability to control and understand the growth of thin layers just a few atoms thick. The preparation of single crystal thin film layers and multilayers remains important for many studies, in particular, for properties dependent. These studies obviously require engineering not just a layer thicknesses but of lateral dimensions as well. The properties of such structures are already proving to be a great interest

  13. Electrical characterization of thin film ferroelectric capacitors

    NARCIS (Netherlands)

    Tiggelman, M.P.J.; Reimann, K.; Klee, M.; Beelen, D.; Keur, W.; Schmitz, Jurriaan; Hueting, Raymond Josephus Engelbart

    2006-01-01

    Tunable capacitors can be used to facilitate the reduction of components in wireless technologies. The tunability of the capacitors is caused by the sensitivity of the relative dielectric constant to a change in polarization with electric field. Thin film ferroelectric MIM capacitors on silicon

  14. Effects of annealing on evaporated SnS thin films

    Energy Technology Data Exchange (ETDEWEB)

    Sakrani, Samsudi; Ismail, Bakar [Universiti Teknologi Malaysia, Skudai, Johor Bahru (Malaysia). Dept. of Physics

    1994-12-31

    The effects of annealing of evaporated tin sulphide thin films (SnS) are described. The films were initially deposited onto glass substrate, followed by annealing in an encapsulated carbon block under the running argon gas at 310 degree Celsius. Short time annealing of the films results in a slight change of the compositions to a mix SnS/SnS sub 2 compound, and the tendency of increasing SnS sub 2 formation was observed on the films annealed for longer periods up to 20 hours. X-ray results showed the transformation of SnS peaks (040) and (080) to predominantly SnS sub 2 peaks - (001), (100), (101), and (110). The associated absorption coefficients measured on the films were found to be greater than 10 sup 5 cm sup -1, with indication of higher photon energy leading to the formation of SnS sub 2 compound.

  15. Effects of annealing on evaporated SnS thin films

    International Nuclear Information System (INIS)

    Samsudi Sakrani; Bakar Ismail

    1994-01-01

    The effects of annealing of evaporated tin sulphide thin films (SnS) are described. The films were initially deposited onto glass substrate, followed by annealing in an encapsulated carbon block under the running argon gas at 310 degree Celsius. Short time annealing of the films results in a slight change of the compositions to a mix SnS/SnS sub 2 compound, and the tendency of increasing SnS sub 2 formation was observed on the films annealed for longer periods up to 20 hours. X-ray results showed the transformation of SnS peaks (040) and (080) to predominantly SnS sub 2 peaks - (001), (100), (101), and (110). The associated absorption coefficients measured on the films were found to be greater than 10 sup 5 cm sup -1, with indication of higher photon energy leading to the formation of SnS sub 2 compound

  16. Structural characterization of chemically deposited PbS thin films

    International Nuclear Information System (INIS)

    Fernandez-Lima, F.A.; Gonzalez-Alfaro, Y.; Larramendi, E.M.; Fonseca Filho, H.D.; Maia da Costa, M.E.H.; Freire, F.L.; Prioli, R.; Avillez, R.R. de; Silveira, E.F. da; Calzadilla, O.; Melo, O. de; Pedrero, E.; Hernandez, E.

    2007-01-01

    Polycrystalline thin films of lead sulfide (PbS) grown using substrate colloidal coating chemical bath depositions were characterized by RBS, XPS, AFM and GIXRD techniques. The films were grown on glass substrates previously coated with PbS colloidal particles in a polyvinyl alcohol solution. The PbS films obtained with the inclusion of the polymer showed non-oxygen-containing organic contamination. All samples maintained the Pb:S 1:1 stoichiometry throughout the film. The amount of effective nucleation centers and the mean grain size have being controlled by the substrate colloidal coating. The analysis of the polycrystalline PbS films showed that a preferable (1 0 0) lattice plane orientation parallel to the substrate surface can be obtained using a substrate colloidal coating chemical bath deposition, and the orientation increases when a layer of colloid is initially dried on the substrate

  17. Internal stress control of boron thin film

    International Nuclear Information System (INIS)

    Satomi, N.; Kitamura, M.; Sasaki, T.; Nishikawa, M.

    1998-01-01

    The occurrence of stress in thin films has led to serious stability problems in practical use. We have investigated the stress in the boron films to find the deposition condition of the boron films with less stress. It was found that the stress in the boron film varies sufficiently from compressive to tensile stress, that is from -1.0 to 1.4 GPa, depending on the evaporation conditions, such as deposition rate and the substrate temperature. Hydrogen ion bombardment resulted in the enhancement of the compressive stress, possibly due to ion peening effect, while under helium ion bombardment, stress relief was observed. The boron film with nearly zero stress was obtained by the evaporation at a deposition rate of 0.5 nm s -1 and substrate temperature of 300 C. (orig.)

  18. Correlated dewetting patterns in thin polystyrene films

    CERN Document Server

    Neto, C; Seemann, R; Blossey, R; Becker, J; Grün, G

    2003-01-01

    We describe preliminary results of experiments and simulations concerned with the dewetting of thin polystyrene films (thickness < 7 nm) on top of silicon oxide wafers. In the experiments we scratched an initially flat film with an atomic force microscopy (AFM) tip, producing dry channels in the film. Dewetting of the films was imaged in situ using AFM and a correlated pattern of holes ('satellite holes') was observed along the rims bordering the channels. The development of this complex film rupture process was simulated and the results of experiments and simulations are in good agreement. On the basis of these results, we attempt to explain the appearance of satellite holes and their positions relative to pre-existing holes.

  19. Correlated dewetting patterns in thin polystyrene films

    International Nuclear Information System (INIS)

    Neto, Chiara; Jacobs, Karin; Seemann, Ralf; Blossey, Ralf; Becker, Juergen; Gruen, Guenther

    2003-01-01

    We describe preliminary results of experiments and simulations concerned with the dewetting of thin polystyrene films (thickness < 7 nm) on top of silicon oxide wafers. In the experiments we scratched an initially flat film with an atomic force microscopy (AFM) tip, producing dry channels in the film. Dewetting of the films was imaged in situ using AFM and a correlated pattern of holes ('satellite holes') was observed along the rims bordering the channels. The development of this complex film rupture process was simulated and the results of experiments and simulations are in good agreement. On the basis of these results, we attempt to explain the appearance of satellite holes and their positions relative to pre-existing holes

  20. Rim instability of bursting thin smectic films

    Science.gov (United States)

    Trittel, Torsten; John, Thomas; Tsuji, Kinko; Stannarius, Ralf

    2013-05-01

    The rupture of thin smectic bubbles is studied by means of high speed video imaging. Bubbles of centimeter diameter and film thicknesses in the nanometer range are pierced, and the instabilities of the moving rim around the opening hole are described. Scaling laws describe the relation between film thickness and features of the filamentation process of the rim. A flapping motion of the retracting smectic film is assumed as the origin of the observed filamentation instability. A comparison with similar phenomena in soap bubbles is made. The present experiments extend studies on soap films [H. Lhuissier and E. Villermaux, Phys. Rev. Lett. 103, 054501 (2009), 10.1103/PhysRevLett.103.054501] to much thinner, uniform films of thermotropic liquid crystals.

  1. Internal stress control of boron thin film

    Energy Technology Data Exchange (ETDEWEB)

    Satomi, N.; Kitamura, M.; Sasaki, T.; Nishikawa, M. [Osaka Univ., Suita (Japan). Graduate Sch. of Eng.

    1998-09-01

    The occurrence of stress in thin films has led to serious stability problems in practical use. We have investigated the stress in the boron films to find the deposition condition of the boron films with less stress. It was found that the stress in the boron film varies sufficiently from compressive to tensile stress, that is from -1.0 to 1.4 GPa, depending on the evaporation conditions, such as deposition rate and the substrate temperature. Hydrogen ion bombardment resulted in the enhancement of the compressive stress, possibly due to ion peening effect, while under helium ion bombardment, stress relief was observed. The boron film with nearly zero stress was obtained by the evaporation at a deposition rate of 0.5 nm s{sup -1} and substrate temperature of 300 C. (orig.) 12 refs.

  2. Dielectric loss of strontium titanate thin films

    Science.gov (United States)

    Dalberth, Mark Joseph

    1999-12-01

    Interest in strontium titanate (STO) thin films for microwave device applications continues to grow, fueled by the telecommunications industry's interest in phase shifters and tunable filters. The optimization of these devices depends upon increasing the phase or frequency tuning and decreasing the losses in the films. Currently, the dielectric response of thin film STO is poorly understood through lack of data and a theory to describe it. We have studied the growth of STO using pulsed laser deposition and single crystal substrates like lanthanum aluminate and neodymium gallate. We have researched ways to use ring resonators to accurately measure the dielectric response as a function of temperature, electric field, and frequency from low radio frequencies to a few gigahertz. Our films grown on lanthanum aluminate show marked frequency dispersion in the real part of the dielectric constant and hints of thermally activated loss behavior. We also found that films grown with conditions that optimized the dielectric constant showed increased losses. In an attempt to simplify the system, we developed a technique called epitaxial lift off, which has allowed us to study films removed from their growth substrates. These free standing films have low losses and show obvious thermally activated behavior. The "amount of tuning," as measured by a figure of merit, KE, is greater in these films than in the films still attached to their growth substrates. We have developed a theory that describes the real and imaginary parts of the dielectric constant. The theory models the real part using a mean field description of the ionic motion in the crystal and includes the loss by incorporating the motion of charged defects in the films.

  3. Thin film preparation of semiconducting iron pyrite

    Science.gov (United States)

    Smestad, Greg P.; Ennaoui, Ahmed; Fiechter, Sebastian; Hofmann, Wolfgang; Tributsch, Helmut; Kautek, Wolfgang

    1990-08-01

    Pyrite (Fe52) has been investigated as a promising new absorber material for thin film solar cell applications because of its high optical absorption coefficient of 1OL cm1, and its bandgap of 0.9 to 1.0 eV. Thin layers have been prepared by Metal Organic Chemical Vapor Deposition, MOCVD, Chemical Spray Pyrolysis, CSP, Chemical Vapor Transport, CVT, and Sulfurization of Iron Oxide films, 510. It is postulated that for the material FeS2, if x is not zero, a high point defect concentration results from replacing 2 dipoles by single S atoms. This causes the observed photovoltages and solar conversion efficiencies to be lower than expected. Using the Fe-O-S ternary phase diagram and the related activity plots, a thermodynamic understanding is formulated for the resulting composition of each of these types of films. It is found that by operating in the oxide portion of the phase diagram, the resulting oxidation state favors pyrite formation over FeS. By proper orientation of the grains relative to the film surface, and by control of pinholes and stoichiometry, an efficient thin film photovolatic solar cell material could be achieved.

  4. Electrochemical fabrication of nanoporous polypyrrole thin films

    Energy Technology Data Exchange (ETDEWEB)

    Li Mei [Key Laboratory of Organic Optoelectronics and Molecular Engineering (Ministry of Education), Department of Chemistry, Tsinghua University, Beijing, 100084 (China); Yuan Jinying [Key Laboratory of Organic Optoelectronics and Molecular Engineering (Ministry of Education), Department of Chemistry, Tsinghua University, Beijing, 100084 (China)], E-mail: yuanjy@mail.tsinghua.edu.cn; Shi Gaoquan [Key Laboratory of Organic Optoelectronics and Molecular Engineering (Ministry of Education), Department of Chemistry, Tsinghua University, Beijing, 100084 (China)], E-mail: gshi@mail.tsinghua.edu.cn

    2008-04-30

    Polypyrrole thin films with pores in nanometer scale were synthesized by direct electrochemical oxidation of pyrrole in a mixed electrolyte of isopropyl alcohol, boron trifluoride diethyl etherate, sodium dodecylsulfonate and poly(ethylene glycol) using well-aligned ZnO nanowires arrays as templates. The thin films exhibit high conductivity of ca. {sigma}{sub rt} {approx} 20.5 s/cm and can be driven to bend during redox processes in 1.0 M lithium perchlorate aqueous solution. The movement rate of an actuator based on this nanoporous film was measured to be over 90{sup o}/s at a driving potential of 0.8 V (vs. Ag/AgCl)

  5. Asymptotic behavior of local dipolar fields in thin films

    Energy Technology Data Exchange (ETDEWEB)

    Bowden, G.J., E-mail: gjb@phys.soton.ac.uk [School of Physics and Astronomy, University of Southampton, SO17 1BJ (United Kingdom); Stenning, G.B.G., E-mail: Gerrit.vanderlaan@diamond.ac.uk [Magnetic Spectroscopy Group, Diamond Light Source, Didcot OX11 0DE (United Kingdom); Laan, G. van der, E-mail: gavin.stenning@stfc.ac.uk [ISIS Neutron and Muon Source, Rutherford Appleton Laboratory, Didcot OX11 0QX (United Kingdom)

    2016-10-15

    A simple method, based on layer by layer direct summation, is used to determine the local dipolar fields in uniformly magnetized thin films. The results show that the dipolar constants converge ~1/m where the number of spins in a square film is given by (2m+1){sup 2}. Dipolar field results for sc, bcc, fcc, and hexagonal lattices are presented and discussed. The results can be used to calculate local dipolar fields in films with either ferromagnetic, antiferromagnetic, spiral, exponential decay behavior, provided the magnetic order only changes normal to the film. Differences between the atomistic (local fields) and macroscopic fields (Maxwellian) are also examined. For the latter, the macro B-field inside the film is uniform and falls to zero sharply outside, in accord with Maxwell boundary conditions. In contrast, the local field for the atomistic point dipole model is highly non-linear inside and falls to zero at about three lattice spacing outside the film. Finally, it is argued that the continuum field B (used by the micromagnetic community) and the local field B{sub loc}(r) (used by the FMR community) will lead to differing values for the overall demagnetization energy. - Highlights: • Point-dipolar fields in uniformly magnetized thin films are characterized by just three numbers. • Maxwell's boundary condition is partially violated in the point-dipole approximation. • Asymptotic values of point dipolar fields in circular monolayers scale as π/r.

  6. Magnon dispersion in thin magnetic films

    International Nuclear Information System (INIS)

    Balashov, T; Wulfhekel, W; Buczek, P; Sandratskii, L; Ernst, A

    2014-01-01

    Although the dispersion of magnons has been measured in many bulk materials, few studies deal with the changes in the dispersion when the material is in the form of a thin film, a system that is of interest for applications. Here we review inelastic tunneling spectroscopy studies of magnon dispersion in Mn/Cu 3 Au(1 0 0) and present new studies on Co and Ni thin films on Cu(1 0 0). The dispersion in Mn and Co films closely follows the dispersion of bulk samples with negligible dependence on thickness. The lifetime of magnons depends slightly on film thickness, and decreases considerably as the magnon energy increases. In Ni/Cu(1 0 0) films the thickness dependence of dispersion is much more pronounced. The measurements indicate a considerable mode softening for thinner films. Magnon lifetimes decrease dramatically near the edge of the Brillouin zone due to a close proximity of the Stoner continuum. The experimental study is supported by first-principles calculations. (paper)

  7. Magnon dispersion in thin magnetic films.

    Science.gov (United States)

    Balashov, T; Buczek, P; Sandratskii, L; Ernst, A; Wulfhekel, W

    2014-10-01

    Although the dispersion of magnons has been measured in many bulk materials, few studies deal with the changes in the dispersion when the material is in the form of a thin film, a system that is of interest for applications. Here we review inelastic tunneling spectroscopy studies of magnon dispersion in Mn/Cu3Au(1 0 0) and present new studies on Co and Ni thin films on Cu(1 0 0). The dispersion in Mn and Co films closely follows the dispersion of bulk samples with negligible dependence on thickness. The lifetime of magnons depends slightly on film thickness, and decreases considerably as the magnon energy increases. In Ni/Cu(1 0 0) films the thickness dependence of dispersion is much more pronounced. The measurements indicate a considerable mode softening for thinner films. Magnon lifetimes decrease dramatically near the edge of the Brillouin zone due to a close proximity of the Stoner continuum. The experimental study is supported by first-principles calculations.

  8. Function and application of ultra thin films

    Energy Technology Data Exchange (ETDEWEB)

    Sasabe, Hiroyuki

    1988-02-01

    A film 10-100mm thick which is strong dynamically to some extent and has possibility to manifest fuctions of high degree different from the nature extrapolated from the normal thin film is called an ultra thin film. As an example of its concrete application, there is an electro-luminescence element which is made by laminating 5 layers of LB films of poly-L-phenylalanine on a n-GaP and has vapor-deposited gold electrodes. When voltage of 5V is imposed to it, light emission of 565nm can be observed and the emission efficiency of 2% is obtained. Besides, it has an excellent stability through the lapse of time. There is also a junction element and the ion concentration injected into macromolecule films of this element has a Gaussian distribution from the surface towards the direction of depth. Accordingly, the most active domain in terms of semiconductor as the result of doping is the location in the neighborhood of the peak. Furthermore, a photo memory is also proposed. It is applied to the artificial hemoglobine which is made of LB films, suggesting the feasibility of creating the artificial protein capable of functioning in the conditions in which the natural protein is unable to function. (5 figs, 1 tab, 7 refs)

  9. Thin film diamond microstructure applications

    Science.gov (United States)

    Roppel, T.; Ellis, C.; Ramesham, R.; Jaworske, D.; Baginski, M. E.; Lee, S. Y.

    1991-01-01

    Selective deposition and abrasion, as well as etching in atomic oxygen or reduced-pressure air, have been used to prepare patterned polycrystalline diamond films which, on further processing by anisotropic Si etching, yield the microstructures of such devices as flow sensors and accelerometers. Both types of sensor have been experimentally tested in the respective functions of hot-wire anemometer and both single- and double-hinged accelerometer.

  10. Rupture of thin liquid films on structured surfaces.

    Science.gov (United States)

    Ajaev, Vladimir S; Gatapova, Elizaveta Ya; Kabov, Oleg A

    2011-10-01

    We investigate stability and breakup of a thin liquid film on a solid surface under the action of disjoining pressure. The solid surface is structured by parallel grooves. Air is trapped in the grooves under the liquid film. Our mathematical model takes into account the effect of slip due to the presence of menisci separating the liquid film from the air inside the grooves, the deformation of these menisci due to local variations of pressure in the liquid film, and nonuniformities of the Hamaker constant which measures the strength of disjoining pressure. Both linear stability and strongly nonlinear evolution of the film are analyzed. Surface structuring results in decrease of the fastest growing instability wavelength and the rupture time. It is shown that a simplified description of film dynamics based on the standard formula for effective slip leads to significant deviations from the behavior seen in our simulations. Self-similar decay over several orders of magnitude of the film thickness near the rupture point is observed. We also show that the presence of the grooves can lead to instability in otherwise stable films if the relative groove width is above a critical value, found as a function of disjoining pressure parameters.

  11. Magnetostatic excitations in thin ferrite films

    International Nuclear Information System (INIS)

    Zil'berman, P.E.; Lugovskoi, A.V.

    1987-01-01

    The authors discuss the influence of the exchange interaction and dissipative processes in thin ferrite films on the eigenfrequency spectrum of magnetostatic standing waves and on the dispersion relation and attenuation of magnetostatic traveling waves. For the first time they obtain explicitly the dispersion relation for magnetostatic waves (MSWs) in a tangential saturating magnetic field H 0 to second order (inclusive) in the exchange interaction parameter λ. The authors obtain computer solutions for this equation in the complex frequency (ω) plane (for standing waves) or wave-number (q) plane (for traveling waves). The authors show that the dispersion relation constructed from the standing-wave spectrum is different from that of the traveling waves if λ≠0, even if dissipation is neglected. The traveling waves have auxiliary branches of the dispersion relation with weak damping near the spin-wave-resonance (SWR) frequencies. Dissipation has only a relatively weak effect on the frequency spectrum of the standing waves, shifting it upward. For the traveling waves, however, dissipation leads to qualitative changes in the structure of the dispersion relation, giving rise to new branches, forbidden bands, reentrant and anomalous-dispersion regions

  12. Local imaging of magnetic flux in superconducting thin films

    Energy Technology Data Exchange (ETDEWEB)

    Shapoval, Tetyana

    2010-01-26

    Local studies of magnetic flux line (vortex) distribution in superconducting thin films and their pinning by natural and artificial defects have been performed using low-temperature magnetic force microscopy (LT-MFM). Taken a 100 nm thin NbN film as an example, the depinning of vortices from natural defects under the influence of the force that the MFM tip exerts on the individual vortex was visualized and the local pinning force was estimated. The good agreement of these results with global transport measurements demonstrates that MFM is a powerful and reliable method to probe the local variation of the pinning landscape. Furthermore, it was demonstrated that the presence of an ordered array of 1-{mu}m-sized ferromagnetic permalloy dots being in a magneticvortex state underneath the Nb film significantly influences the natural pinning landscape of the superconductor leading to commensurate pinning effects. This strong pinning exceeds the repulsive interaction between the superconducting vortices and allows vortex clusters to be located at each dot. Additionally, for industrially applicable YBa{sub 2}Cu{sub 3}O{sub 7-{delta}} thin films the main question discussed was the possibility of a direct correlation between vortices and artificial defects as well as vortex imaging on rough as-prepared thin films. Since the surface roughness (droplets, precipitates) causes a severe problem to the scanning MFM tip, a nanoscale wedge polishing technique that allows to overcome this problem was developed. Mounting the sample under a defined small angle results in a smooth surface and a monotonic thickness reduction of the film along the length of the sample. It provides a continuous insight from the film surface down to the substrate with surface sensitive scanning techniques. (orig.)

  13. Local imaging of magnetic flux in superconducting thin films

    International Nuclear Information System (INIS)

    Shapoval, Tetyana

    2010-01-01

    Local studies of magnetic flux line (vortex) distribution in superconducting thin films and their pinning by natural and artificial defects have been performed using low-temperature magnetic force microscopy (LT-MFM). Taken a 100 nm thin NbN film as an example, the depinning of vortices from natural defects under the influence of the force that the MFM tip exerts on the individual vortex was visualized and the local pinning force was estimated. The good agreement of these results with global transport measurements demonstrates that MFM is a powerful and reliable method to probe the local variation of the pinning landscape. Furthermore, it was demonstrated that the presence of an ordered array of 1-μm-sized ferromagnetic permalloy dots being in a magneticvortex state underneath the Nb film significantly influences the natural pinning landscape of the superconductor leading to commensurate pinning effects. This strong pinning exceeds the repulsive interaction between the superconducting vortices and allows vortex clusters to be located at each dot. Additionally, for industrially applicable YBa 2 Cu 3 O 7-δ thin films the main question discussed was the possibility of a direct correlation between vortices and artificial defects as well as vortex imaging on rough as-prepared thin films. Since the surface roughness (droplets, precipitates) causes a severe problem to the scanning MFM tip, a nanoscale wedge polishing technique that allows to overcome this problem was developed. Mounting the sample under a defined small angle results in a smooth surface and a monotonic thickness reduction of the film along the length of the sample. It provides a continuous insight from the film surface down to the substrate with surface sensitive scanning techniques. (orig.)

  14. Transparent and conductive electrodes by large-scale nanostructuring of noble metal thin-films

    DEFF Research Database (Denmark)

    Linnet, Jes; Runge Walther, Anders; Wolff, Christian

    grid, and nano-wire thin-films [1]. The indium and carbon films do not match the chemical stability nor the electrical performance of the noble metals, and many metal films are not uniform in material distribution leading to significant surface roughness and randomized transmission haze. We demonstrate...

  15. On dewetting of thin films due to crystallization (crystallization dewetting).

    Science.gov (United States)

    Habibi, Mehran; Rahimzadeh, Amin; Eslamian, Morteza

    2016-03-01

    Drying and crystallization of a thin liquid film of an ionic or a similar solution can cause dewetting in the resulting thin solid film. This paper aims at investigating this type of dewetting, herein termed "crystallization dewetting", using PbI2 dissolved in organic solvents as the model solution. PbI2 solid films are usually used in X-ray detection and lead halide perovskite solar cells. In this work, PbI2 films are fabricated using spin coating and the effect of major parameters influencing the crystallization dewetting, including the type of the solvent, solution concentration, drying temperature, spin speed, as well as imposed vibration on the substrate are studied on dewetting, surface profile and coverage, using confocal scanning laser microscopy. Simplified hydrodynamic governing equations of crystallization in thin films are presented and using a mathematical representation of the process, it is phenomenologically demonstrated that crystallization dewetting occurs due to the absorption and consumption of the solution surrounding a growing crystal. Among the results, it is found that a low spin speed (high thickness), a high solution concentration and a low drying temperature promote crystal growth, and therefore crystallization dewetting. It is also shown that imposed vibration on the substrate can affect the crystal size and crystallization dewetting.

  16. Deposition of yttrium oxysulfide thin films by atomic layer epitaxy

    International Nuclear Information System (INIS)

    Kukli, K.; University of Tartu, Tartu,; Johansson, L-S.; Nykaenen, E.; Peussa, M.; Ninistoe, L.

    1998-01-01

    Full text: Yttrium oxysulfide is a highly interesting material for optoelectronic applications. It is industrially exploited in the form of doped powder in catholuminescent phosphors, e.g. Y 2 O 2 S: Eu 3+ for colour TV. Attempts to grow thin films of Y 2 O 2 S have not been frequent and only partially successful due to the difficulties in obtaining crystalline films at a reasonable temperature. Furthermore, sputtering easily leads to a sulphur deficiency. Evaporation of the elements from a multi-source offers a better control of the stoichiometry resulting in hexagonal (0002) oriented films at 580 deg C. In this paper we present the first successful thin film growth experiments using a chemical process with molecular precursors. Atomic layer epitaxy (ALE) allows the use of a relatively low deposition temperature and thus compatibility with other technologies. Already at 425 deg C the reaction between H 2 S and Y(thd) 3 (thd = 2,2,6,6 - tetramethyl-heptane-3,5- dione) yields a crystalline Y 2 O 2 S thin film which was characterized by XRD, XRF and XPS

  17. Nanostructured thin film coatings with different strengthening effects

    Directory of Open Access Journals (Sweden)

    Panfilov Yury

    2017-01-01

    Full Text Available A number of articles on strengthening thin film coatings were analyzed and a lot of unusual strengthening effects, such as super high hardness and plasticity simultaneously, ultra low friction coefficient, high wear-resistance, curve rigidity increasing of drills with small diameter, associated with process formation of nanostructured coatings by the different thin film deposition methods were detected. Vacuum coater with RF magnetron sputtering system and ion-beam source and arc evaporator for nanostructured thin film coating manufacture are represented. Diamond Like Carbon and MoS2 thin film coatings, Ti, Al, Nb, Cr, nitride, carbide, and carbo-nitride thin film materials are described as strengthening coatings.

  18. Physical Vapor Deposition of Thin Films

    Science.gov (United States)

    Mahan, John E.

    2000-01-01

    A unified treatment of the theories, data, and technologies underlying physical vapor deposition methods With electronic, optical, and magnetic coating technologies increasingly dominating manufacturing in the high-tech industries, there is a growing need for expertise in physical vapor deposition of thin films. This important new work provides researchers and engineers in this field with the information they need to tackle thin film processes in the real world. Presenting a cohesive, thoroughly developed treatment of both fundamental and applied topics, Physical Vapor Deposition of Thin Films incorporates many critical results from across the literature as it imparts a working knowledge of a variety of present-day techniques. Numerous worked examples, extensive references, and more than 100 illustrations and photographs accompany coverage of: * Thermal evaporation, sputtering, and pulsed laser deposition techniques * Key theories and phenomena, including the kinetic theory of gases, adsorption and condensation, high-vacuum pumping dynamics, and sputtering discharges * Trends in sputter yield data and a new simplified collisional model of sputter yield for pure element targets * Quantitative models for film deposition rate, thickness profiles, and thermalization of the sputtered beam

  19. Flexible magnetic thin films and devices

    Science.gov (United States)

    Sheng, Ping; Wang, Baomin; Li, Runwei

    2018-01-01

    Flexible electronic devices are highly attractive for a variety of applications such as flexible circuit boards, solar cells, paper-like displays, and sensitive skin, due to their stretchable, biocompatible, light-weight, portable, and low cost properties. Due to magnetic devices being important parts of electronic devices, it is essential to study the magnetic properties of magnetic thin films and devices fabricated on flexible substrates. In this review, we mainly introduce the recent progress in flexible magnetic thin films and devices, including the study on the stress-dependent magnetic properties of magnetic thin films and devices, and controlling the properties of flexible magnetic films by stress-related multi-fields, and the design and fabrication of flexible magnetic devices. Project supported by the National Key R&D Program of China (No. 2016YFA0201102), the National Natural Science Foundation of China (Nos. 51571208, 51301191, 51525103, 11274321, 11474295, 51401230), the Youth Innovation Promotion Association of the Chinese Academy of Sciences (No. 2016270), the Key Research Program of the Chinese Academy of Sciences (No. KJZD-EW-M05), the Ningbo Major Project for Science and Technology (No. 2014B11011), the Ningbo Science and Technology Innovation Team (No. 2015B11001), and the Ningbo Natural Science Foundation (No. 2015A610110).

  20. Nanocomposite thin films for triggerable drug delivery.

    Science.gov (United States)

    Vannozzi, Lorenzo; Iacovacci, Veronica; Menciassi, Arianna; Ricotti, Leonardo

    2018-05-01

    Traditional drug release systems normally rely on a passive delivery of therapeutic compounds, which can be partially programmed, prior to injection or implantation, through variations in the material composition. With this strategy, the drug release kinetics cannot be remotely modified and thus adapted to changing therapeutic needs. To overcome this issue, drug delivery systems able to respond to external stimuli are highly desirable, as they allow a high level of temporal and spatial control over drug release kinetics, in an operator-dependent fashion. Areas covered: On-demand drug delivery systems actually represent a frontier in this field and are attracting an increasing interest at both research and industrial level. Stimuli-responsive thin films, enabled by nanofillers, hold a tremendous potential in the field of triggerable drug delivery systems. The inclusion of responsive elements in homogeneous or heterogeneous thin film-shaped polymeric matrices strengthens and/or adds intriguing properties to conventional (bare) materials in film shape. Expert opinion: This Expert Opinion review aims to discuss the approaches currently pursued to achieve an effective on-demand drug delivery, through nanocomposite thin films. Different triggering mechanisms allowing a fine control on drug delivery are described, together with current challenges and possible future applications in therapy and surgery.

  1. Molecular tailoring of interfaces for thin film on substrate systems

    Science.gov (United States)

    Grady, Martha Elizabeth

    Thin film on substrate systems appear most prevalently within the microelectronics industry, which demands that devices operate in smaller and smaller packages with greater reliability. The reliability of these multilayer film systems is strongly influenced by the adhesion of each of the bimaterial interfaces. During use, microelectronic components undergo thermo-mechanical cycling, which induces interfacial delaminations leading to failure of the overall device. The ability to tailor interfacial properties at the molecular level provides a mechanism to improve thin film adhesion, reliability and performance. This dissertation presents the investigation of molecular level control of interface properties in three thin film-substrate systems: photodefinable polyimide films on passivated silicon substrates, self-assembled monolayers at the interface of Au films and dielectric substrates, and mechanochemically active materials on rigid substrates. For all three materials systems, the effect of interfacial modifications on adhesion is assessed using a laser-spallation technique. Laser-induced stress waves are chosen because they dynamically load the thin film interface in a precise, noncontacting manner at high strain rates and are suitable for both weak and strong interfaces. Photodefinable polyimide films are used as dielectrics in flip chip integrated circuit packages to reduce the stress between silicon passivation layers and mold compound. The influence of processing parameters on adhesion is examined for photodefinable polyimide films on silicon (Si) substrates with three different passivation layers: silicon nitride (SiNx), silicon oxynitride (SiOxNy), and the native silicon oxide (SiO2). Interfacial strength increases when films are processed with an exposure step as well as a longer cure cycle. Additionally, the interfacial fracture energy is assessed using a dynamic delamination protocol. The high toughness of this interface (ca. 100 J/m2) makes it difficult

  2. Two-dimensional superconductivity in ultrathin disordered thin films

    International Nuclear Information System (INIS)

    Beasley, M.R.

    1992-01-01

    The status of the understanding of two-dimensional superconductivity in ultrathin, disordered thin films is reviewed. The different consequences of microscopic versus macroscopic disorder are stressed. It is shown that microscopic disorder leads to a rapid suppression of the mean-field transition temperature. The consequences of macroscopic disorder are not well understood, but a universal behavior of the zero-bias resistance as a function of field and temperature has been observed. (orig.)

  3. Correlation Spectroscopy of Surfaces, Thin Films, and Nanostructures

    CERN Document Server

    Berakdar, Jamal

    2004-01-01

    Here, leading scientists present an overview of the most modern experimental and theoretical methods for studying electronic correlations on surfaces, in thin films and in nanostructures. In particular, they describe in detail coincidence techniques for studying many-particle correlations while. critically examining the informational content of such processes from a theoretical point viewpoint. Furthermore, the book considers the current state of incorporating many-body effects into theoretical approaches. Covered topics:. -Auger-electron photoelectron coincidence experiments and theories. -Co

  4. Optical thin films and coatings from materials to applications

    CERN Document Server

    Flory, Francois

    2013-01-01

    Optical coatings, including mirrors, anti-reflection coatings, beam splitters, and filters, are an integral part of most modern optical systems. This book provides an overview of thin film materials, the properties, design and manufacture of optical coatings and their use across a variety of application areas.$bOptical coatings, including mirrors, anti-reflection coatings, beam splitters, and filters, are an integral part of most modern optical systems. Optical thin films and coatings provides an overview of thin film materials, the properties, design and manufacture of optical coatings and their use across a variety of application areas. Part one explores the design and manufacture of optical coatings. Part two highlights unconventional features of optical thin films including scattering properties of random structures in thin films, optical properties of thin film materials at short wavelengths, thermal properties and colour effects. Part three focusses on novel materials for optical thin films and coatings...

  5. Temperature dependence of LRE-HRE-TM thin films

    Science.gov (United States)

    Li, Zuoyi; Cheng, Xiaomin; Lin, Gengqi; Li, Zhen; Huang, Zhixin; Jin, Fang; Wang, Xianran; Yang, Xiaofei

    2003-04-01

    Temperature dependence of the properties of RE-TM thin films is very important for MO recording. In this paper, we studied the temperature dependence of the magnetic and magneto-optical properties of the amorphous LRE-HRE-TM single layer thin films and LRE-HRE-TM/HRE-TM couple-bilayered thin films. For LRE-HRE-TM single layer thin films, the temperature dependence of the magnetization was investigated by using the mean field theory. The experimental and theoretical results matched very well. With the LRE substitution in HRE-TM thin film, the compensation temperature Tcomp decreased and the curie temperature Tc remained unchanged. Kerr rotation angle became larger and the saturation magnetization Ms at room temperature increased. For LRE-HRE-TM/HRE-TM couple-bilayered thin films, comparisons of the temperature dependences of the coercivities and Kerr rotation angles were made between isolated sublayers and couple-bilayered thin film.

  6. Application-related properties of giant magnetostrictive thin films

    International Nuclear Information System (INIS)

    Lim, S.H.; Kim, H.J.; Na, S.M.; Suh, S.J.

    2002-01-01

    In an effort to facilitate the utilization of giant magnetostrictive thin films in microdevices, application-related properties of these thin films, which include induced anisotropy, residual stress and corrosion properties, are investigated. A large induced anisotropy with an energy of 6x10 4 J/m 3 is formed in field-sputtered amorphous Sm-Fe-B thin films, resulting in a large magnetostriction anisotropy. Two components of residual stress, intrinsic compressive stress and tensile stress due to the difference of the thermal expansion coefficients between the substrate and thin film, are identified. The variation of residual stress with fabrication parameter and annealing temperature, and its influence on mechanical bending and magnetic properties are examined. Better corrosion properties are observed in Sm-Fe thin films than in Tb-Fe. Corrosion properties of Tb-Fe thin films, however, are much improved with the introduction of nitrogen to the thin films without deteriorating magnetostrictive properties

  7. In situ annealing of hydroxyapatite thin films

    International Nuclear Information System (INIS)

    Johnson, Shevon; Haluska, Michael; Narayan, Roger J.; Snyder, Robert L.

    2006-01-01

    Hydroxyapatite is a bioactive ceramic that mimics the mineral composition of natural bone. Unfortunately, problems with adhesion, poor mechanical integrity, and incomplete bone ingrowth limit the use of many conventional hydroxyapatite surfaces. In this work, we have developed a novel technique to produce crystalline hydroxyapatite thin films involving pulsed laser deposition and postdeposition annealing. Hydroxyapatite films were deposited on Ti-6Al-4V alloy and Si (100) using pulsed laser deposition, and annealed within a high temperature X-ray diffraction system. The transformation from amorphous to crystalline hydroxyapatite was observed at 340 deg. C. Mechanical and adhesive properties were examined using nanoindentation and scratch adhesion testing, respectively. Nanohardness and Young's modulus values of 3.48 and 91.24 GPa were realized in unannealed hydroxyapatite films. Unannealed and 350 deg. C annealed hydroxyapatite films exhibited excellent adhesion to Ti-6Al-4V alloy substrates. We anticipate that the adhesion and biological properties of crystalline hydroxyapatite thin films may be enhanced by further consideration of deposition and annealing parameters

  8. Thermal conductivities of thin, sputtered optical films

    International Nuclear Information System (INIS)

    Henager, C.H. Jr.; Pawlewicz, W.T.

    1991-05-01

    The normal component of the thin film thermal conductivity has been measured for the first time for several advanced sputtered optical materials. Included are data for single layers of boron nitride (BN), aluminum nitride (AIN), silicon aluminum nitride (Si-Al-N), silicon aluminum oxynitride (Si-Al-O-N), silicon carbide (SiC), and for dielectric-enhanced metal reflectors of the form Al(SiO 2 /Si 3 N 4 ) n and Al(Al 2 O 3 /AIN) n . Sputtered films of more conventional materials like SiO 2 , Al 2 O 3 , Ta 2 O 5 , Ti, and Si have also been measured. The data show that thin film thermal conductivities are typically 10 to 100 times lower than conductivities for the same materials in bulk form. Structural disorder in the amorphous or very fine-grained films appears to account for most of the conductivity difference. Conclusive evidence for a film/substrate interface contribution is presented

  9. Polycrystalline silicon thin-film solar cells on glass

    Energy Technology Data Exchange (ETDEWEB)

    Gall, S.; Becker, C.; Conrad, E.; Dogan, P.; Fenske, F.; Gorka, B.; Lee, K.Y.; Rau, B.; Ruske, F.; Rech, B. [Helmholtz-Zentrum Berlin fuer Materialien und Energie GmbH (formerly Hahn-Meitner-Institut Berlin GmbH), Department Silicon Photovoltaics (SE1), Kekulestr. 5, D-12489 Berlin (Germany)

    2009-06-15

    Poly-Si thin-film solar cells on glass feature the potential to reach single-junction efficiencies of 15% or even higher at low costs. In this paper innovative approaches are discussed, which could lead to substantial efficiency improvements and significant cost reductions: (i) preparation of large-grained poly-Si films using the 'seed layer concept' targeting at high material quality, (ii) utilization of ZnO:Al-coated glass enabling simple contacting and light-trapping schemes, (iii) utilization of high-rate electron-beam evaporation for the absorber deposition offering a high potential for cost reduction. (author)

  10. Thermal stability of pulsed laser deposited iridium oxide thin films at low oxygen atmosphere

    Science.gov (United States)

    Gong, Yansheng; Wang, Chuanbin; Shen, Qiang; Zhang, Lianmeng

    2013-11-01

    Iridium oxide (IrO2) thin films have been regarded as a leading candidate for bottom electrode and diffusion barrier of ferroelectric capacitors, some process related issues need to be considered before integrating ferroelectric capacitors into memory cells. This paper presents the thermal stability of pulsed laser deposited IrO2 thin films at low oxygen atmosphere. Emphasis was given on the effect of post-deposition annealing temperature at different oxygen pressure (PO2) on the crystal structure, surface morphology, electrical resistivity, carrier concentration and mobility of IrO2 thin films. The results showed that the thermal stability of IrO2 thin films was strongly dependent on the oxygen pressure and annealing temperature. IrO2 thin films can stably exist below 923 K at PO2 = 1 Pa, which had a higher stability than the previous reported results. The surface morphology of IrO2 thin films depended on PO2 and annealing temperature, showing a flat and uniform surface for the annealed films. Electrical properties were found to be sensitive to both the annealing temperature and oxygen pressure. The room-temperature resistivity of IrO2 thin films with a value of 49-58 μΩ cm increased with annealing temperature at PO2 = 1 Pa. The thermal stability of IrO2 thin films as a function of oxygen pressure and annealing temperature was almost consistent with thermodynamic calculation.

  11. Laser damage studies on MgF2 thin films

    International Nuclear Information System (INIS)

    Protopapa, Maria Lucia; De Tomasi, Ferdinando; Perrone, Maria Rita; Piegari, Angela; Masetti, Enrico; Ristau, Detlev; Quesnel, Etienne; Duparre, Angela

    2001-01-01

    The results of laser damage studies performed at 248 nm (KrF excimer laser) on MgF 2 thin films deposited by different techniques (electron-beam evaporation, thermal boat evaporation, and ion-beam sputtering) on fused silica and CaF 2 substrates are presented. We find that the films deposited on CaF 2 substrates by the electron-beam evaporation technique present the highest damage threshold fluence (9 J/cm2). The photoacoustic (PA) beam deflection technique was employed, in addition to microscopical inspection, to determine laser damage fluences. We confirm, by scanning electron microscopy analysis of the damaged spots, the capability of the PA technique to provide information on the mechanisms leading to damage. The dependence of both laser damage fluence and damage morphology on the film deposition technique, as well as on the film substrate, is discussed

  12. The effect of irradiation by 173Cs and 60Co on the optical and spectral response properties of lead iodide thin films

    International Nuclear Information System (INIS)

    Jamil, S. S. B.; Ltaif, A. K.; Fadhel, H. M.

    2012-12-01

    This films of solution grown PbI 2 and of pure material of PbI 2 have been deposited onto glass substrate at 100o C by vacuum thermal evaporation technique. Some physical properties of samples without and with gamma radiation are studied. The irradiation process to the samples were made by applied sample to 1 73 'Cs source with activity 0.635 μci and 6 0C o source with activity 0.62 μci without and with different times of irradiation (3,4,5,6, weeks) to obtain the suitable dose. The x-ray diffraction analysis confirmed that PbI 2 films are polycrystalline, having bollixing structure. Transmission spectra, absorption coefficient and band gap energy are studies were also carried out in the wavelength region of 420-900 nm. The band gap of Pb1 2 at room temperature was found to be 2.37-2.78 eV with direct transition nature using the plots were calculated which were machinating with earlier reported value. The spectral photocurrent of PbI 2 layers deposited in different time were also studied, it is found the maximum photocurrent response always is between the wavelength 490-500 nm. (Author)

  13. The Effects of Postprocessing on Physical and Solution Deposition of Complex Oxide Thin Films for Tunable Applications

    Science.gov (United States)

    2016-02-01

    BST film capacitor devices were fabricated using physical and chemical solution deposition techniques. The typical dielectric constant of the...electrode loss, and the parallel resistor- capacitor circuit represents the capacitance and the dielectric loss, assuming lead inductance is...Thin barium strontium titanate (BST) films are being developed as dielectric film for use in tunable radio frequency (RF)/microwave applications. Thin

  14. Multiferroic oxide thin films and heterostructures

    KAUST Repository

    Lu, Chengliang

    2015-05-26

    Multiferroic materials promise a tantalizing perspective of novel applications in next-generation electronic, memory, and energy harvesting technologies, and at the same time they also represent a grand scientific challenge on understanding complex solid state systems with strong correlations between multiple degrees of freedom. In this review, we highlight the opportunities and obstacles in growing multiferroic thin films with chemical and structural integrity and integrating them in functional devices. Besides the magnetoelectric effect, multiferroics exhibit excellent resistant switching and photovoltaic properties, and there are plenty opportunities for them to integrate with other ferromagnetic and superconducting materials. The challenges include, but not limited, defect-related leakage in thin films, weak magnetism, and poor control on interface coupling. Although our focuses are Bi-based perovskites and rare earth manganites, the insights are also applicable to other multiferroic materials. We will also review some examples of multiferroic applications in spintronics, memory, and photovoltaic devices.

  15. Domain switching of fatigued ferroelectric thin films

    Science.gov (United States)

    Tak Lim, Yun; Yeog Son, Jong; Shin, Young-Han

    2014-05-01

    We investigate the domain wall speed of a ferroelectric PbZr0.48Ti0.52O3 (PZT) thin film using an atomic force microscope incorporated with a mercury-probe system to control the degree of electrical fatigue. The depolarization field in the PZT thin film decreases with increasing the degree of electrical fatigue. We find that the wide-range activation field previously reported in ferroelectric domains result from the change of the depolarization field caused by the electrical fatigue. Domain wall speed exhibits universal behavior to the effective electric field (defined by an applied electric field minus the depolarization field), regardless of the degree of the electrical fatigue.

  16. Domain switching of fatigued ferroelectric thin films

    International Nuclear Information System (INIS)

    Tak Lim, Yun; Yeog Son, Jong; Shin, Young-Han

    2014-01-01

    We investigate the domain wall speed of a ferroelectric PbZr 0.48 Ti 0.52 O 3 (PZT) thin film using an atomic force microscope incorporated with a mercury-probe system to control the degree of electrical fatigue. The depolarization field in the PZT thin film decreases with increasing the degree of electrical fatigue. We find that the wide-range activation field previously reported in ferroelectric domains result from the change of the depolarization field caused by the electrical fatigue. Domain wall speed exhibits universal behavior to the effective electric field (defined by an applied electric field minus the depolarization field), regardless of the degree of the electrical fatigue

  17. Highly coercive thin-film nanostructures

    International Nuclear Information System (INIS)

    Zhou, J.; Skomski, R.; Kashyap, A.; Sorge, K.D.; Sui, Y.; Daniil, M.; Gao, L.; Yan, M.L.; Liou, S.-H.; Kirby, R.D.; Sellmyer, D.J.

    2005-01-01

    The processing, structure, and magnetism of highly coercive Sm-Co and FePt thin-film nanostructures are investigated. The structures include 1:5 based Sm-Co-Cu-Ti magnets, particulate FePt:C thin films, and FePt nanotubes. As in other systems, the coercivity depends on texture and imperfections, but there are some additional features. A specific coercivity mechanism in particulate media is a discrete pinning mode intermediate between Stoner-Wohlfarth rotation and ordinary domain-wall pinning. This mechanism yields a coercivity maximum for intermediate intergranular exchange and explains the occurrence of coercivities of 5 T in particulate Sm-Co-Cu-Ti magnets

  18. High efficiency thin-film solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Schock, Hans-Werner [Helmholtz Zentrum Berlin (Germany). Solar Energy

    2012-11-01

    Production of photovoltaics is growing worldwide on a gigawatt scale. Among the thin film technologies, Cu(In,Ga)S,Se{sub 2} (CIS or CIGS) based solar cells have been the focus of more and more attention. This paper aims to analyze the success of CIGS based solar cells and the potential of this technology for future photovoltaics large-scale production. Specific material properties make CIS unique and allow the preparation of the material with a wide range of processing options. The huge potential lies in the possibility to take advantage of modern thin film processing equipment and combine it with very high efficiencies beyond 20% already achieved on the laboratory scale. A sustainable development of this technology could be realized by modifying the materials and replacing indium by abundant elements. (orig.)

  19. Quantifying clustering in disordered carbon thin films

    International Nuclear Information System (INIS)

    Carey, J.D.

    2006-01-01

    The quantification of disorder and the effects of clustering in the sp 2 phase of amorphous carbon thin films are discussed. The sp 2 phase is described in terms of disordered nanometer-sized conductive sp 2 clusters embedded in a less conductive sp 3 matrix. Quantification of the clustering of the sp 2 phase is estimated from optical as well as from electron and nuclear magnetic resonance methods. Unlike in other disordered group IV thin film semiconductors, we show that care must be exercised in attributing a meaning to the Urbach energy extracted from absorption measurements in the disordered carbon system. The influence of structural disorder, associated with sp 2 clusters of similar size, and topological disorder due to undistorted clusters of different sizes is also discussed. Extensions of this description to other systems are also presented

  20. Thin film photovoltaic panel and method

    Science.gov (United States)

    Ackerman, Bruce; Albright, Scot P.; Jordan, John F.

    1991-06-11

    A thin film photovoltaic panel includes a backcap for protecting the active components of the photovoltaic cells from adverse environmental elements. A spacing between the backcap and a top electrode layer is preferably filled with a desiccant to further reduce water vapor contamination of the environment surrounding the photovoltaic cells. The contamination of the spacing between the backcap and the cells may be further reduced by passing a selected gas through the spacing subsequent to sealing the backcap to the base of the photovoltaic panels, and once purged this spacing may be filled with an inert gas. The techniques of the present invention are preferably applied to thin film photovoltaic panels each formed from a plurality of photovoltaic cells arranged on a vitreous substrate. The stability of photovoltaic conversion efficiency remains relatively high during the life of the photovoltaic panel, and the cost of manufacturing highly efficient panels with such improved stability is significantly reduced.

  1. Strain quantification in epitaxial thin films

    International Nuclear Information System (INIS)

    Cushley, M

    2008-01-01

    Strain arising in epitaxial thin films can be beneficial in some cases but devastating in others. By altering the lattice parameters, strain may give a thin film properties hitherto unseen in the bulk material. On the other hand, heavily strained systems are prone to develop lattice defects in order to relieve the strain, which can cause device failure or, at least, a decrease in functionality. Using convergent beam electron diffraction (CBED) and high-resolution transmission electron microscopy (HRTEM), it is possible to determine local strains within a material. By comparing the results from CBED and HRTEM experiments, it is possible to gain a complete view of a material, including the strain and any lattice defects present. As well as looking at how the two experimental techniques differ from each other, I will also look at how results from different image analysis algorithms compare. Strain in Si/SiGe samples and BST/SRO/MgO capacitor structures will be discussed.

  2. Method of formation of thin film component

    Energy Technology Data Exchange (ETDEWEB)

    Wada, Chikara; Kato, Kinya

    1988-04-16

    In the production process of component which is carrying thin film device, such as thin film transistor, acid treatment is applied for etching or for preventing contamination. In case of barium borsilicate glass base, the base is affected by the acid treatment resulting the decrease of transparency. To avoid the effect, deposition of SiO/sub 2/ layer on the surface of the base is usually applied. This invention relates to the protective method of barium borosilicate surface by harnessing the effect of coexisting ion in the acid treatment bath. The method is to add 0.03-5 mol/l of phosphoric acid or its salt in the bath. By the effect of coexisting ion, barium borsilicate glass surface was protected from the damage. (2 figs)

  3. Fabrication of Pb (Zr, Ti) O3 Thin Film for Non-Volatile Memory Device Application

    International Nuclear Information System (INIS)

    Mar Lar Win

    2011-12-01

    Ferroelectric lead zirconate titanate powder was composed of mainly the oxides of titanium, zirconium and lead. PZT powder was firstly prepared by thermal synthesis at different Zr/Ti ratios with various sintering temperatures. PZT thin film was fabricated on SiO2/Si substrate by using thermal evaporation method. Physical and elemental analysis were carried out by using SEM, EDX and XRD The ferroelectric properties and the switching behaviour of the PZT thin films were investigated. The ferroelectric properties and switching properties of the PZT thin film (near morphotropic phase boundary sintered at 800 C) could function as a nonvolatile memory.

  4. Thin film solar cell technology in Germany

    International Nuclear Information System (INIS)

    Diehl, W.; Sittinger, V.; Szyszka, B.

    2005-01-01

    Within the scope of limited nonrenewable energy resources and the limited capacity of the ecosystem for greenhouse gases and nuclear waste, sustainability is one important target in the future. Different energy scenarios showed the huge potential for photovoltaics (PV) to solve this energy problem. Nevertheless, in the last decade, PV had an average growth rate of over 20% per year. In 2002, the solar industry delivered more than 500 MWp/year of photovoltaic generators [A. Jaeger-Waldau, A European Roadmap for PV R and D, E-MRS Spring Meeting, (2003)]. More than 85% of the current production involves crystalline silicon technologies. These technologies still have a high cost reduction potential, but this will be limited by the silicon feedstock. On the other hand the so-called second generation thin film solar cells based on a-Si, Cu(In,Ga)(Se,S 2 (CIGS) or CdTe have material thicknesses of a few microns as a result of their direct band gap. Also, the possibility of circuit integration offers an additional cost reduction potential. Especially in Germany, there are a few companies who focus on thin film solar cells. Today, there are two manufacturers with production lines: the Phototronics (PST) division of RWE-Schott Solar with a-Si thin film technology and the former Antec Solar GmbH (now Antec Solar Energy GmbH) featuring the CdTe technology. A pilot line based on CIGS technology is run by Wuerth Solar GmbH. There is also a variety of research activity at other companies, namely, at Shell Solar, Sulfurcell Solartechnik GmbH, Solarion GmbH and the CIS-Solartechnik GmbH. We will give an overview on research activity on various thin film technologies, as well as different manufacturing and production processes in the companies mentioned above. (Author)

  5. Optical characterization of thin solid films

    CERN Document Server

    Ohlídal, Miloslav

    2018-01-01

    This book is an up-to-date survey of the major optical characterization techniques for thin solid films. Emphasis is placed on practicability of the various approaches. Relevant fundamentals are briefly reviewed before demonstrating the application of these techniques to practically relevant research and development topics. The book is written by international top experts, all of whom are involved in industrial research and development projects.

  6. Thin-film silicon solar cell technology

    Czech Academy of Sciences Publication Activity Database

    Shah, A. V.; Schade, H.; Vaněček, Milan; Meier, J.; Vallat-Sauvain, E.; Wyrsch, N.; Kroll, U.; Droz, C.; Bailat, J.

    2004-01-01

    Roč. 12, - (2004), s. 113-142 ISSN 1062-7995 R&D Projects: GA MŽP SN/320/11/03 Institutional research plan: CEZ:AV0Z1010914 Keywords : thin-film silicon modules * hydrogenerated amorphous silicon(a-Si:H) * hydrogenerated microcrystalline (ćc-Si:H) * transparent conductive oxydes(TCOs) * building-integrated photovoltaics(BIPV) Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.196, year: 2004

  7. The carbonization of thin polyaniline films

    Czech Academy of Sciences Publication Activity Database

    Morávková, Zuzana; Trchová, Miroslava; Exnerová, Milena; Stejskal, Jaroslav

    2012-01-01

    Roč. 520, č. 19 (2012), s. 6088-6094 ISSN 0040-6090 R&D Projects: GA AV ČR IAA400500905; GA AV ČR IAA100500902; GA ČR GAP205/12/0911 Institutional research plan: CEZ:AV0Z40500505 Institutional support: RVO:61389013 Keywords : polyaniline * thin films * infrared spectroscopy Subject RIV: CD - Macromolecular Chemistry Impact factor: 1.604, year: 2012

  8. Study of obliquely deposited thin cobalt films

    International Nuclear Information System (INIS)

    Szmaja, W.; Kozlowski, W.; Balcerski, J.; Kowalczyk, P.J.; Grobelny, J.; Cichomski, M.

    2010-01-01

    Research highlights: → The paper reports simultaneously on the magnetic domain structure of obliquely deposited thin cobalt films (40 nm and 100 nm thick) and their morphological structure. Such studies are in fact rare (Refs. cited in the paper). → Moreover, to our knowledge, observations of the morphological structure of these films have not yet been carried out simultaneously by transmission electron microscopy (TEM) and atomic force microscopy (AFM). → The films of both thicknesses were found to have uniaxial in-plane magnetic anisotropy. → The magnetic microstructure of the films 40 nm thick was composed of domains running and magnetized predominantly in the direction perpendicular to the incidence plane of the vapor beam. → As the film thickness was changed from 40 nm to 100 nm, the magnetic anisotropy was observed to change from the direction perpendicular to parallel with respect to the incidence plane. → Thanks to the application of TEM and AFM, complementary information on the morphological structure of the films could be obtained. → In comparison with TEM images, AFM images revealed grains larger in size and slightly elongated in the direction perpendicular rather than parallel to the incidence plane. → These experimental findings clearly show that surface diffusion plays an important role in the process of film growth. → For the films 40 nm thick, the alignment of columnar grains in the direction perpendicular to the incidence plane was observed. → This correlates well with the magnetic domain structure of these films. → For the films 100 nm thick, the perpendicular alignment of columnar grains could also be found, although in fact with larger difficulty. → TEM studies showed that the films consisted mainly of the hexagonal close-packed (HCP) crystalline structure, but no preferred crystallographic orientation of the grains could be detected for the films of both thicknesses. → For the films 100 nm thick, the alignment of

  9. P-type CuxS thin films: Integration in a thin film transistor structure

    International Nuclear Information System (INIS)

    Nunes de Carvalho, C.; Parreira, P.; Lavareda, G.; Brogueira, P.; Amaral, A.

    2013-01-01

    Cu x S thin films, 80 nm thick, are deposited by vacuum thermal evaporation of sulfur-rich powder mixture, Cu 2 S:S (50:50 wt.%) with no intentional heating of the substrate. The process of deposition occurs at very low deposition rates (0.1–0.3 nm/s) to avoid the formation of Cu or S-rich films. The evolution of Cu x S films surface properties (morphology/roughness) under post deposition mild annealing in air at 270 °C and their integration in a thin film transistor (TFT) are the main objectives of this study. Accordingly, Scanning Electron Microscopy studies show Cu x S films with different surface morphologies, depending on the post deposition annealing conditions. For the shortest annealing time, the Cu x S films look to be constructed of grains with large dimension at the surface (approximately 100 nm) and consequently, irregular shape. For the longest annealing time, films with a fine-grained surface are found, with some randomly distributed large particles bound to this fine-grained surface. Atomic Force Microscopy results indicate an increase of the root-mean-square roughness of Cu x S surface with annealing time, from 13.6 up to 37.4 nm, for 255 and 345 s, respectively. The preliminary integration of Cu x S films in a TFT bottom-gate type structure allowed the study of the feasibility and compatibility of this material with the remaining stages of a TFT fabrication as well as the determination of the p-type characteristic of the Cu x S material. - Highlights: • Surface properties of annealed Cu x S films. • Variation of conductivity with annealing temperatures of Cu x S films. • Application of evaporated Cu x S films in a thin film transistor (TFT) structure. • Determination of Cu x S p-type characteristic from TFT behaviour

  10. Neutron reflectivity of electrodeposited thin magnetic films

    International Nuclear Information System (INIS)

    Cooper, Joshaniel F.K.; Vyas, Kunal N.; Steinke, Nina-J.; Love, David M.; Kinane, Christian J.; Barnes, Crispin H.W.

    2014-01-01

    Highlights: • Electrodeposited magnetic bi-layers were measured by polarised neutron reflectivity. • When growing a CoNiCu alloy from a single bath a Cu rich region is initially formed. • This Cu rich region is formed in the first layer but not subsequent ones. • Ni deposition is inhibited in thin film growth and Co deposits anomalously. • Alloy magnetism and neutron scattering length give a self-consistent model. - Abstract: We present a polarised neutron reflectivity (PNR) study of magnetic/non-magnetic (CoNiCu/Cu) thin films grown by single bath electrodeposition. We find that the composition is neither homogeneous with time, nor consistent with bulk values. Instead an initial, non-magnetic copper rich layer is formed, around 2 nm thick. This layer is formed by the deposition of the dilute, but rapidly diffusing, Cu 2+ ions near the electrode surface at the start of growth, before the region is depleted and the deposition becomes mass transport limited. After the region has been depleted, by growth etc., this layer does not form and thus may be prevented by growing a copper buffer layer immediately preceding the magnetic layer growth. As has been previously found, cobalt deposits anomalously compared to nickel, and even inhibits Ni deposition in thin films. The layer magnetisation and average neutron scattering length are fitted independently but both depend upon the alloy composition. Thus these parameters can be used to check for model self-consistency, increasing confidence in the derived composition

  11. Preventing Thin Film Dewetting via Graphene Capping.

    Science.gov (United States)

    Cao, Peigen; Bai, Peter; Omrani, Arash A; Xiao, Yihan; Meaker, Kacey L; Tsai, Hsin-Zon; Yan, Aiming; Jung, Han Sae; Khajeh, Ramin; Rodgers, Griffin F; Kim, Youngkyou; Aikawa, Andrew S; Kolaczkowski, Mattew A; Liu, Yi; Zettl, Alex; Xu, Ke; Crommie, Michael F; Xu, Ting

    2017-09-01

    A monolayer 2D capping layer with high Young's modulus is shown to be able to effectively suppress the dewetting of underlying thin films of small organic semiconductor molecule, polymer, and polycrystalline metal, respectively. To verify the universality of this capping layer approach, the dewetting experiments are performed for single-layer graphene transferred onto polystyrene (PS), semiconducting thienoazacoronene (EH-TAC), gold, and also MoS 2 on PS. Thermodynamic modeling indicates that the exceptionally high Young's modulus and surface conformity of 2D capping layers such as graphene and MoS 2 substantially suppress surface fluctuations and thus dewetting. As long as the uncovered area is smaller than the fluctuation wavelength of the thin film in a dewetting process via spinodal decomposition, the dewetting should be suppressed. The 2D monolayer-capping approach opens up exciting new possibilities to enhance the thermal stability and expands the processing parameters for thin film materials without significantly altering their physical properties. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  12. Aluminum nitride and nanodiamond thin film microstructures

    Energy Technology Data Exchange (ETDEWEB)

    Knoebber, Fabian; Bludau, Oliver; Roehlig, Claus-Christian; Williams, Oliver; Sah, Ram Ekwal; Kirste, Lutz; Cimalla, Volker; Lebedev, Vadim; Nebel, Christoph; Ambacher, Oliver [Fraunhofer-Institute for Applied Solid State Physics, Freiburg (Germany)

    2010-07-01

    In this work, aluminum nitride (AlN) and nanocrystalline diamond (NCD) thin film microstructures have been developed. Freestanding NCD membranes were coated with a piezoelectrical AlN layer in order to build tunable micro-lens arrays. For the evaluation of the single material quality, AlN and NCD thin films on silicon substrates were fabricated using RF magnetron sputtering and microwave chemical vapor deposition techniques, respectively. The crystal quality of AlN was investigated by X-ray diffraction. The piezoelectric constant d{sub 33} was determined by scanning laser vibrometry. The NCD thin films were optimized with respect to surface roughness, mechanical stability, intrinsic stress and transparency. To determine the mechanical properties of the materials, both, micromechanical resonator and membrane structures were fabricated and measured by magnetomotive resonant frequency spectroscopy and bulging experiments, respectively. Finally, the behavior of AlN/NCD heterostructures was modeled using the finite element method and the first structures were characterized by piezoelectrical measurements.

  13. Process for forming thin film, heat treatment process of thin film sheet, and heat treatment apparatus therefor

    International Nuclear Information System (INIS)

    Watanabe, S.

    1984-01-01

    The invention provides a process for forming a magnetic thin film on a base film, a heat treatment process of a thin film sheet consisting of the base film and the magnetic thin film, and an apparatus for performing heat treatment of the thin film sheet. Tension applied to the thin film sheet is substantially equal to that applied to the base film when the magnetic thin film is formed thereon. Then, the thin film sheet is treated with heat. The thin film sheet is heated with a given temperature gradient to a reactive temperature at which heat shrinkage occurs, while the tension is being applied thereto. Thereafter, the thin film sheet to which the tension is still applied is cooled with substantially the same temperature gradient as applied in heating. The heat treatment apparatus has a film driving unit including a supply reel, a take-up reel, a drive source and guide rollers; a heating unit including heating plates, heater blocks and a temperature controller for heating the sheet to the reactive temperature; and a heat insulating unit including a thermostat and another temperature controller for maintaining the sheet at the nonreactive temperature which is slightly lower than the reactive temperature

  14. Collective Behavior of Amoebae in Thin Films

    Science.gov (United States)

    Bae, Albert

    2005-03-01

    We have discovered new aspects of social behavior in Dictyostelium discoideum by culturing high density colonies in liquid media depleted of nutrients in confined geometries by using three different preparations: I. thin (15-40um thick) and II. ultrathin (behavior of cells despite flattening that increased their areas by over an order of magnitude. We also observed that the earliest synchronized response of cells following the onset of starvation, a precursor to aggregation, was hastened by reducing the thickness of the aqueous culture layer. We were surprised to find that the threshold concentration for aggregation was raised by thin film confinement when compared to bulk behavior. Finally, both the ultra thin and microfluidic preparations reveal, with new clarity, vortex states of aggregation.

  15. Growth of HfO{sub x} thin films by reactive molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Hildebrandt, Erwin; Kurian, Jose; Alff, Lambert [Institut fuer Materialwissenschaft, TU Darmstadt (Germany)

    2008-07-01

    Thin films of hafnium oxide were grown on single crystal r-cut and c-cut sapphire by reactive molecular beam epitaxy. The conditions for the growth of single oriented hafnium oxide thin films have been established. Hafnium oxide thin films were characterized by X-ray diffraction and optical absorption measurements. It was found that hafnium oxide thin films grown on r-cut sapphire were (00l) oriented whereas, on c-cut sapphire, hafnium oxide films showed different orientations depending on the growth temperature and oxidation conditions. The hafnium oxide films grown at higher temperature and under strong oxidation conditions yielded (001) oriented films on c-cut sapphire whereas slightly weaker oxidation condition leads to (111) oriented hafnium oxide films. The bandgap deducted from optical absorption measurement carried out on hafnium oxide films grown under optimized conditions agreed well with the values reported in literature. A range of oxygen deficient thin films of hafnium oxide were also grown on single crystal sapphire substrates in order to investigate the effect of oxygen vacancies on dielectric properties of hafnium oxide. The oxygen deficient thin films of hafnium oxide show a decrease in bandgap with increase in oxygen deficiency.

  16. Thermodynamical fluctuations and critical behavior in weakly disordered YBCO thin and ultra-thin films

    International Nuclear Information System (INIS)

    Lesueur, J.; Aprili, M.; Degoy, S.; Chambonnet, D.; Keller, D.

    1996-01-01

    The specific role of disorder in the transport properties of YBCO has been investigated, using both light-ion irradiation of thin films to finely tune the amount of atomic disorder, and ultra-thin films grown to study possible dimensional effects. For weak disorder, the samples display a resistive transition typical of the mean-field paraconductive regime of a homogeneous media, well described by the Lawrence and Doniach model for layered superconductors. As the disorder increases, two effects take place. First, the c-axis coherence length becomes shorter, leading to a more anisotropic material, as shown by the excess conductivity above T c . Second, an incipient granularity is revealed, leading to a less sharper transition, which is analyzed within the random 3D XY critical model for the paracoherence transition. Two main results are derived: an experimental test of the Ginzburg criteria for the paracoherence transition, and a new fluctuation regime in nanometric grain size superconductors

  17. Infrared characterization of strontium titanate thin films

    International Nuclear Information System (INIS)

    Almeida, B.G.; Pietka, A.; Mendes, J.A.

    2004-01-01

    Strontium titanate thin films have been prepared at different oxygen pressures with various post-deposition annealing treatments. The films were deposited by pulsed laser ablation at room temperature on Si(0 0 1) substrates with a silica buffer layer. Infrared reflectance measurements were performed in order to determine relevant film parameters such as layer thicknesses and chemical composition. The infrared reflectance spectra were fitted by using adequate dielectric function forms for each layer. The fitting procedure provided the extraction of the dielectric functions of the strontium titanate film, the silica layer and the substrate. The as-deposited films are found to be amorphous, and their infrared spectra present peaks corresponding to modes with high damping constants. As the annealing time and temperature increases the strontium titanate layer becomes more ordered so that it can be described by its SrTiO 3 bulk mode parameters. Also, the silica layer grows along with the ordering of the strontium titanate film, due to oxidation during annealing

  18. Superconducting properties of iron chalcogenide thin films

    Directory of Open Access Journals (Sweden)

    Paolo Mele

    2012-01-01

    Full Text Available Iron chalcogenides, binary FeSe, FeTe and ternary FeTexSe1−x, FeTexS1−x and FeTe:Ox, are the simplest compounds amongst the recently discovered iron-based superconductors. Thin films of iron chalcogenides present many attractive features that are covered in this review, such as: (i easy fabrication and epitaxial growth on common single-crystal substrates; (ii strong enhancement of superconducting transition temperature with respect to the bulk parent compounds (in FeTe0.5Se0.5, zero-resistance transition temperature Tc0bulk = 13.5 K, but Tc0film = 19 K on LaAlO3 substrate; (iii high critical current density (Jc ~ 0.5 ×106 A cm2 at 4.2 K and 0 T for FeTe0.5Se0.5 film deposited on CaF2, and similar values on flexible metallic substrates (Hastelloy tapes buffered by ion-beam assisted deposition with a weak dependence on magnetic field; (iv high upper critical field (~50 T for FeTe0.5Se0.5, Bc2(0, with a low anisotropy, γ ~ 2. These highlights explain why thin films of iron chalcogenides have been widely studied in recent years and are considered as promising materials for applications requiring high magnetic fields (20–50 T and low temperatures (2–10 K.

  19. Thermal decomposition of titanium deuteride thin films

    International Nuclear Information System (INIS)

    Malinowski, M.E.

    1983-01-01

    The thermal desorption spectra of deuterium from essentially clean titanium deuteride thin films were measured by ramp heating the films in vacuum; the film thicknesses ranged from 20 to 220 nm and the ramp rates varied from 0.5 to about 3 0 C s - 1 . Each desorption spectrum consisted of a low nearly constant rate at low temperatures followed by a highly peaked rate at higher temperatures. The cleanliness and thinness of the films permitted a description of desorption rates in terms of a simple phenomenological model based on detailed balancing in which the low temperature pressure-composition characteristics of the two-phase (α-(α+#betta#)-#betta#) region of the Ti-D system were used as input data. At temperatures below 340 0 C the model predictions were in excellent agreement with the experimentally measured desorption spectra. Interpretations of the spectra in terms of 'decomposition trajectories'' are possible using this model, and this approach is also used to explain deviations of the spectra from the model at temperatures of 340 0 C and above. (Auth.)

  20. Electrical resistivity of thin metal films

    CERN Document Server

    Wissmann, Peter

    2007-01-01

    The aim of the book is to give an actual survey on the resistivity of thin metal and semiconductor films interacting with gases. We discuss the influence of the substrate material and the annealing treatment of the films, presenting our experimental data as well as theoretical models to calculate the scattering cross section of the conduction electrons in the frame-work of the scattering hypothesis. Main emphasis is laid on the comparison of gold and silver films which exhibit nearly the same lattice structure but differ in their chemical activity. In conclusion, the most important quantity for the interpretation is the surface charging z while the correlation with the optical data or the frustrated IR vibrations seems the show a more material-specific character. Z can be calculated on the basis of the density functional formalism or the self-consistent field approximation using Mulliken’s population analysis.

  1. Sulfated cellulose thin films with antithrombin affinity

    Directory of Open Access Journals (Sweden)

    2009-11-01

    Full Text Available Cellulose thin films were chemically modified by in situ sulfation to produce surfaces with anticoagulant characteristics. Two celluloses differing in their degree of polymerization (DP: CEL I (DP 215–240 and CEL II (DP 1300–1400 were tethered to maleic anhydride copolymer (MA layers and subsequently exposed to SO3•NMe3 solutions at elevated temperature. The impact of the resulting sulfation on the physicochemical properties of the cellulose films was investigated with respect to film thickness, atomic composition, wettability and roughness. The sulfation was optimized to gain a maximal surface concentration of sulfate groups. The scavenging of antithrombin (AT by the surfaces was determined to conclude on their potential anticoagulant properties.

  2. Finite-element analysis of the deformation of thin Mylar films due to measurement forces.

    Energy Technology Data Exchange (ETDEWEB)

    Baker, Michael Sean; Robinson, Alex Lockwood; Tran, Hy D.

    2012-01-01

    Significant deformation of thin films occurs when measuring thickness by mechanical means. This source of measurement error can lead to underestimating film thickness if proper corrections are not made. Analytical solutions exist for Hertzian contact deformation, but these solutions assume relatively large geometries. If the film being measured is thin, the analytical Hertzian assumptions are not appropriate. ANSYS is used to model the contact deformation of a 48 gauge Mylar film under bearing load, supported by a stiffer material. Simulation results are presented and compared to other correction estimates. Ideal, semi-infinite, and constrained properties of the film and the measurement tools are considered.

  3. Preparation and properties of antimony thin film anode materials

    Institute of Scientific and Technical Information of China (English)

    SU Shufa; CAO Gaoshao; ZHAO Xinbing

    2004-01-01

    Metallic antimony thin films were deposited by magnetron sputtering and electrodeposition. Electrochemical properties of the thin film as anode materials for lithium-ion batteries were investigated and compared with those of antimony powder. It was found that both magnetron sputtering and electrodeposition are easily controllable processes to deposit antimony films with fiat charge/discharge potential plateaus. The electrochemical performances of antimony thin films, especially those prepared with magnetron sputtering, are better than those of antimony powder. The reversible capacities of the magnetron sputtered antimony thin film are above 400 mA h g-1 in the first 15 cycles.

  4. Large displacement vertical translational actuator based on piezoelectric thin films.

    Science.gov (United States)

    Qiu, Zhen; Pulskamp, Jeffrey S; Lin, Xianke; Rhee, Choong-Ho; Wang, Thomas; Polcawich, Ronald G; Oldham, Kenn

    2010-07-01

    A novel vertical translational microactuator based on thin-film piezoelectric actuation is presented, using a set of four compound bend-up/bend-down unimorphs to produce translational motion of a moving platform or stage. The actuation material is a chemical-solution deposited lead-zirconate-titanate (PZT) thin film. Prototype designs have shown as much as 120 μ m of static displacement, with 80-90 μ m displacements being typical, using four 920 μ m long by 70 μ m legs. Analytical models are presented that accurately describe nonlinear behavior in both static and dynamic operation of prototype stages when the dependence of piezoelectric coefficients on voltage is known. Resonance of the system is observed at a frequency of 200 Hz. The large displacement and high bandwidth of the actuators at low-voltage and low-power levels should make them useful to a variety of optical applications, including endoscopic microscopy.

  5. Printable Thin Film Supercapacitors Using Single-Walled Carbon Nanotubes

    KAUST Repository

    Kaempgen, Martti

    2009-05-13

    Thin film supercapacitors were fabricated using printable materials to make flexible devices on plastic. The active electrodes were made from sprayed networks of single-walled carbon nanotubes (SWCNTs) serving as both electrodes and charge collectors. Using a printable aqueous gel electrolyte as well as an organic liquid electrolyte, the performances of the devices show very high energy and power densities (6 W h/kg for both electrolytes and 23 and 70 kW/kg for aqueous gel electrolyte and organic electrolyte, respectively) which is comparable to performance in other SWCNT-based supercapacitor devices fabricated using different methods. The results underline the potential of printable thin film supercapacitors. The simplified architecture and the sole use of printable materials may lead to a new class of entirely printable charge storage devices allowing for full integration with the emerging field of printed electronics. © 2009 American Chemical Society.

  6. Magnetic Field Enhanced Superconductivity in Epitaxial Thin Film WTe2.

    Science.gov (United States)

    Asaba, Tomoya; Wang, Yongjie; Li, Gang; Xiang, Ziji; Tinsman, Colin; Chen, Lu; Zhou, Shangnan; Zhao, Songrui; Laleyan, David; Li, Yi; Mi, Zetian; Li, Lu

    2018-04-25

    In conventional superconductors an external magnetic field generally suppresses superconductivity. This results from a simple thermodynamic competition of the superconducting and magnetic free energies. In this study, we report the unconventional features in the superconducting epitaxial thin film tungsten telluride (WTe 2 ). Measuring the electrical transport properties of Molecular Beam Epitaxy (MBE) grown WTe 2 thin films with a high precision rotation stage, we map the upper critical field H c2 at different temperatures T. We observe the superconducting transition temperature T c is enhanced by in-plane magnetic fields. The upper critical field H c2 is observed to establish an unconventional non-monotonic dependence on temperature. We suggest that this unconventional feature is due to the lifting of inversion symmetry, which leads to the enhancement of H c2 in Ising superconductors.

  7. Structural characterization of vacuum evaporated ZnSe thin films

    Indian Academy of Sciences (India)

    The lattice parameter, grain size, average internal stress, microstrain, dislocation density and degree of pre- ferred orientation in the film are calculated and correlated with Ts. Keywords. ZnSe thin films; X-ray diffraction; average internal stress; microstrain; dislocation density. 1. Introduction. Thin films of ZnSe has attracted ...

  8. Preparation and characterization of vanadium oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Monfort, O.; Plesch, G. [Comenius University of Bratislava, Faculty of Natural Sciences, Department of Inorganic Chemistry, 84215 Bratislava (Slovakia); Roch, T. [Comenius University of Bratislava, Faculty of Mathematics Physics and Informatics, Department of Experimental Physics, 84248 Bratislava (Slovakia)

    2013-04-16

    The thermotropic VO{sub 2} films have many applications, since they exhibit semiconductor-conductor switching properties at temperature around 70 grad C. Vanadium oxide thin films were prepared via sol-gel method. Spin coater was used to depose these films on Si/SiO{sub 2} and lime glass substrates. Thin films of V{sub 2}O{sub 5} can be reduced to metastable VO{sub 2} thin films at the temperature of 450 grad C under the pressure of 10{sup -2} Pa. These films are then converted to thermotropic VO{sub 2} at 700 grad C in argon under normal pressure. (authors)

  9. Thin film structures and phase stability

    International Nuclear Information System (INIS)

    Clemens, B.M.; Johnson, W.L.

    1990-01-01

    This was a two day symposium, with invited and contributed papers as well as an evening poster session. The first day concentrated on solid state reactions with invited talks by Lindsay Greer from the University of Cambridge, King Tu from IBM Yorktown Heights, and Carl Thompson from MIT. Professor Greer observed that the diffusion of Zr is 10 6 times slower than that of Ni in amorphous NiZr, confirming that Ni is the mobile species in solid state amorphization. King Tu explained the formation of metastable phases in this film diffusion couples by the concept of maximum rate of free energy change. Carl Thompson discussed the formation of amorphous phases in metal silicon systems, and discussed a two stage nucleation and growth process. The contributed papers also generated discussion on topics such as phase segregation, amorphous silicide formation, room temperature oxidation of silicon, and nucleation during ion beam irradiation. There was a lively poster session on Monday evening with papers on a wide variety of topics covering the general area of thin film science. The second day had sessions Epitaxy and Multilayer Structure I and II, with the morning focussing on epitaxial and heteroepitaxial growth of thin films. Robin Farrow of IBM Almaden led off with an invited talk where he reported on some remarkable success he and his co-workers have had in growing single crystal epitaxial thin films and superlattices of silver, iron, cobalt and platinum on GaAs. This was followed by several talks on epitaxial growth and characterization. The afternoon focused on interfaces and structure of multilayered materials. A session on possible stress origins of the supermodulus effect was highlighted by lively interaction from the audience. Most of the papers presented at the symposium are presented in this book

  10. Nonlinear current-voltage behavior in PZT thin films

    Energy Technology Data Exchange (ETDEWEB)

    Xiao, Mi; Zhang, Weikang; Zhang, Zebin; Li, Shida; Zhang, Ping; Lan, Kuibo [Tianjin University, School of Electrical and Information Engineering, Tianjin (China)

    2017-05-15

    In this paper, Pb(Zr{sub 0.52}Ti{sub 0.48})O{sub 3} (PZT) thin films were prepared by sol-gel synthesis and characterized by X-ray diffraction, field emission scanning electron microscopy and current-voltage measurements. Here, we demonstrate that in addition to the outstanding ferroelectric and dielectric properties, the PZT films also have remarkably nonlinear current-voltage characteristics. Considering the contact of semi-conductive grains in the PZT films, a double Schottky barrier (DSB) model may be responsible for such phenomena. The test results show that with the decrease of annealing temperature and the increase of the film thickness, the threshold voltages (V{sub th}) increase obviously. The maximum V{sub th} value of 60.95 V and the minimum value of 6.9 V in our experiments were obtained from the five-layered samples annealed at 600 C and the two-layered samples annealed at 700 C, respectively. As a result, PZT thin film may lead to efficient switching and sensing devices. (orig.)

  11. Thin liquid films with time-dependent chemical reactions sheared by an ambient gas flow

    Science.gov (United States)

    Bender, Achim; Stephan, Peter; Gambaryan-Roisman, Tatiana

    2017-08-01

    Chemical reactions in thin liquid films are found in many industrial applications, e.g., in combustion chambers of internal combustion engines where a fuel film can develop on pistons or cylinder walls. The reactions within the film and the turbulent outer gas flow influence film stability and lead to film breakup, which in turn can lead to deposit formation. In this work we examine the evolution and stability of a thin liquid film in the presence of a first-order chemical reaction and under the influence of a turbulent gas flow. Long-wave theory with a double perturbation analysis is used to reduce the complexity of the problem and obtain an evolution equation for the film thickness. The chemical reaction is assumed to be slow compared to film evolution and the amount of reactant in the film is limited, which means that the reaction rate decreases with time as the reactant is consumed. A linear stability analysis is performed to identify the influence of reaction parameters, material properties, and environmental conditions on the film stability limits. Results indicate that exothermic reactions have a stabilizing effect whereas endothermic reactions destabilize the film and can lead to rupture. It is shown that an initially unstable film can become stable with time as the reaction rate decreases. The shearing of the film by the external gas flow leads to the appearance of traveling waves. The shear stress magnitude has a nonmonotonic influence on film stability.

  12. Cracking in thin films of colloidal particles on elastomeric substrates

    Science.gov (United States)

    Smith, Michael; Sharp, James

    2012-02-01

    The drying of thin colloidal films of particles is a common industrial problem (e.g paint drying, ceramic coatings). An often undesirable side effect is the appearance of cracks. As the liquid in a suspension evaporates, particles are forced into contact both with each other and the substrate, forming a fully wetted film. Under carefully controlled conditions the observed cracks grow orthogonal to the drying front, spaced at regular intervals along it. In this work we investigated the role of the substrate in constraining the film. Atomic force microscopy, was used to image the particle arrangements on the top and bottom surfaces of films, dried on liquid and glass substrates. We present convincing evidence that the interface prevents particle rearrangements at the bottom of the film, leading to a mismatch strain between upper and lower surfaces of the film which appears to drive cracking. We show that when the modulus of the substrate becomes comparable to the stresses measured in the films, the crack spacing is significantly altered. We also show that cracks do not form on liquid substrates. These combined experiments highlight the importance of substrate constraint in the crack formation mechanism.[4pt] [1] M.I. Smith, J.S. Sharp, Langmuir 27, 8009 (2011)

  13. Theoretical investigation of the thermodynamic properties of metallic thin films

    International Nuclear Information System (INIS)

    Hung, Vu Van; Phuong, Duong Dai; Hoa, Nguyen Thi; Hieu, Ho Khac

    2015-01-01

    The thermodynamic properties of metallic thin films with face-centered cubic structure at ambient conditions were investigated using the statistical moment method including the anharmonicity effects of thermal lattice vibrations. The analytical expressions of Helmholtz free energy, lattice parameter, linear thermal expansion coefficient, specific heats at the constant volume and constant pressure were derived in terms of the power moments of the atomic displacements. Numerical calculations of thermodynamic properties have been performed for Au and Al thin films and compared with those of bulk metals. This research proposes that thermodynamic quantities of thin films approach the values of bulk when the thickness of thin film is about 70 nm. - Highlights: • Thermodynamic properties of thin films were investigated using the moment method. • Expressions of Helmholtz energy, expansion coefficient, specific heats were derived. • Calculations for Au, Al thin films were performed and compared with those of bulks

  14. Theoretical investigation of the thermodynamic properties of metallic thin films

    Energy Technology Data Exchange (ETDEWEB)

    Hung, Vu Van [Vietnam Education Publishing House, 81 Tran Hung Dao, Hanoi (Viet Nam); Phuong, Duong Dai [Hanoi National University of Education, 136 Xuan Thuy, Hanoi (Viet Nam); Hoa, Nguyen Thi [University of Transport and Communications, Lang Thuong, Dong Da, Hanoi (Viet Nam); Hieu, Ho Khac, E-mail: hieuhk@duytan.edu.vn [Institute of Research and Development, Duy Tan University, K7/25 Quang Trung, Danang (Viet Nam)

    2015-05-29

    The thermodynamic properties of metallic thin films with face-centered cubic structure at ambient conditions were investigated using the statistical moment method including the anharmonicity effects of thermal lattice vibrations. The analytical expressions of Helmholtz free energy, lattice parameter, linear thermal expansion coefficient, specific heats at the constant volume and constant pressure were derived in terms of the power moments of the atomic displacements. Numerical calculations of thermodynamic properties have been performed for Au and Al thin films and compared with those of bulk metals. This research proposes that thermodynamic quantities of thin films approach the values of bulk when the thickness of thin film is about 70 nm. - Highlights: • Thermodynamic properties of thin films were investigated using the moment method. • Expressions of Helmholtz energy, expansion coefficient, specific heats were derived. • Calculations for Au, Al thin films were performed and compared with those of bulks.

  15. Controlling the competing magnetic anisotropy energies in FineMET amorphous thin films with ultra-soft magnetic properties

    Directory of Open Access Journals (Sweden)

    Ansar Masood

    2017-05-01

    Full Text Available Thickness dependent competing magnetic anisotropy energies were investigated to explore the global magnetic behaviours of FineMET amorphous thin films. A dominant perpendicular magnetization component in the as-deposited state of thinner films was observed due to high magnetoelastic anisotropy energy which arises from stresses induced at the substrate-film interface. This perpendicular magnetization component decreases with increasing film thickness. Thermal annealing at elevated temperature revealed a significant influence on the magnetization state of the FineMET thin films and controlled annealing steps leads to ultra-soft magnetic properties, making these thin films alloys ideal for a wide range of applications.

  16. Solution processed pentacene thin films and their structural properties

    International Nuclear Information System (INIS)

    Tao Chunlan; Zhang Xuhui; Zhang Fujia; Liu Yiyang; Zhang Haoli

    2007-01-01

    The paper reported the solution process of pentacene thin films from organic solvent O-dichlorobenzene. The pentacene thin films obtained from different conditions were characterized by X-ray diffraction (XRD), optical microscopy, scanning electron microscopy (SEM), and UV-vis spectroscopy. The result shows that the pentacene solution was successfully obtained at a minimum temperature of 40 deg. C. The optimum temperature of forming pentacene thin films was 100 deg. C

  17. Polarized Neutron Reflectivity Simulation of Ferromagnet/ Antiferromagnet Thin Films

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Ki Yeon; Lee, Jeong Soo

    2008-02-15

    This report investigates the current simulating and fitting programs capable of calculating the polarized neutron reflectivity of the exchange-biased ferromagnet/antiferromagnet magnetic thin films. The adequate programs are selected depending on whether nonspin flip and spin flip reflectivities of magnetic thin films and good user interface are available or not. The exchange-biased systems such as Fe/Cr, Co/CoO, CoFe/IrMn/Py thin films have been simulated successfully with selected programs.

  18. ITO thin films prepared by a microwave heating

    International Nuclear Information System (INIS)

    Okuya, Masayuki; Ito, Nobuyuki; Shiozaki, Katsuyuki

    2007-01-01

    ITO thin films were prepared by irradiating 2.45 GHz of microwave with an output power of 700 W using a commercial kitchen microwave oven. A substrate temperature went up and down rapidly between 100 and 650 deg. C in a minute by a dielectric loss of SnO 2 layer pre-deposited on a glass substrate. We found that the electrical and optical properties of films were affected by the atmosphere in a microwave irradiation, while the sintering was completed within a few minutes. Although the electrical resistivity was not reduced below 5.0 x 10 -4 Ω.cm in this study, the results lead to the possibility of a practical rapid synthesis of ITO transparent conducting oxide films

  19. Strain engineering of perovskite thin films using a single substrate

    International Nuclear Information System (INIS)

    Janolin, P-E; Guiblin, N; Dkhil, B; Anokhin, A S; Mukhortov, V M; Golovko, Yu I; Gui, Z; Bellaiche, L; Ravy, S; El Marssi, M; Yuzyuk, Yu I

    2014-01-01

    Combining temperature-dependent x-ray diffraction, Raman spectroscopy and first-principles-based effective Hamiltonian calculations, we show that varying the thickness of (Ba 0.8 Sr 0.2 )TiO 3 (BST) thin films deposited on the same single substrate (namely, MgO) enables us to change not only the magnitude but also the sign of the misfit strain. Such previously overlooked control of the strain allows several properties of these films (e.g. Curie temperature, symmetry of ferroelectric phases, dielectric response) to be tuned and even optimized. Surprisingly, such desired control of the strain (and of the resulting properties) originates from an effect that is commonly believed to be detrimental to functionalities of films, namely the existence of misfit dislocations. The present study therefore provides a novel route to strain engineering, as well as leading us to revisit common beliefs. (fast track communication)

  20. Tin oxide transparent thin-film transistors

    International Nuclear Information System (INIS)

    Presley, R E; Munsee, C L; Park, C-H; Hong, D; Wager, J F; Keszler, D A

    2004-01-01

    A SnO 2 transparent thin-film transistor (TTFT) is demonstrated. The SnO 2 channel layer is deposited by RF magnetron sputtering and then rapid thermal annealed in O 2 at 600 deg. C. The TTFT is highly transparent, and enhancement-mode behaviour is achieved by employing a very thin channel layer (10-20 nm). Maximum field-effect mobilities of 0.8 cm 2 V -1 s -1 and 2.0 cm 2 V -1 s -1 are obtained for enhancement- and depletion-mode devices, respectively. The transparent nature and the large drain current on-to-off ratio of 10 5 associated with the enhancement-mode behaviour of these devices may prove useful for novel gas-sensor applications

  1. Deposition and characterisation of epitaxial oxide thin films for SOFCs

    KAUST Repository

    Santiso, José ; Burriel, Mó nica

    2010-01-01

    This paper reviews the recent advances in the use of thin films, mostly epitaxial, for fundamental studies of materials for solid oxide fuel cell (SOFC) applications. These studies include the influence of film microstructure, crystal orientation

  2. Switching, storage, and erasure effects in a superconducting thin film

    International Nuclear Information System (INIS)

    Testardi, L.R.

    1976-01-01

    Thin niobium films can be switched from a superconducting to a resistive state permanently by application of a short electrical pulse. Application of a short pulse of opposite polarity returns the film to the superconducting state

  3. CO2 gas sensitivity of sputtered zinc oxide thin films

    Indian Academy of Sciences (India)

    TECS

    Gas sensitivity; ZnO; sputtering; XRD patterns; structure; thin films. 1. Introduction. Because zinc ... voltage and absorption properties of those fabricated films have been ... tations are useful in many physical applications. The in- plane (Hegde ...

  4. Physics of thin films advances in research and development

    CERN Document Server

    Hass, Georg; Vossen, John L

    2013-01-01

    Physics of Thin Films: Advances in Research and Development, Volume 12 reviews advances that have been made in research and development concerning the physics of thin films. This volume covers a wide range of preparative approaches, physics phenomena, and applications related to thin films. This book is comprised of four chapters and begins with a discussion on metal coatings and protective layers for front surface mirrors used at various angles of incidence from the ultraviolet to the far infrared. Thin-film materials and deposition conditions suitable for minimizing reflectance changes with

  5. Sputtering materials for VLSI and thin film devices

    CERN Document Server

    Sarkar, Jaydeep

    2010-01-01

    An important resource for students, engineers and researchers working in the area of thin film deposition using physical vapor deposition (e.g. sputtering) for semiconductor, liquid crystal displays, high density recording media and photovoltaic device (e.g. thin film solar cell) manufacturing. This book also reviews microelectronics industry topics such as history of inventions and technology trends, recent developments in sputtering technologies, manufacturing steps that require sputtering of thin films, the properties of thin films and the role of sputtering target performance on overall p

  6. Thin-Film Materials Synthesis and Processing Facility

    Data.gov (United States)

    Federal Laboratory Consortium — FUNCTION: Provides a wide capability for deposition and processing of thin films, including sputter and ion-beam deposition, thermal evaporation, electro-deposition,...

  7. Characterizations of photoconductivity of graphene oxide thin films

    Directory of Open Access Journals (Sweden)

    Shiang-Kuo Chang-Jian

    2012-06-01

    Full Text Available Characterizations of photoresponse of a graphene oxide (GO thin film to a near infrared laser light were studied. Results showed the photocurrent in the GO thin film was cathodic, always flowing in an opposite direction to the initial current generated by the preset bias voltage that shows a fundamental discrepancy from the photocurrent in the reduced graphene oxide thin film. Light illumination on the GO thin film thus results in more free electrons that offset the initial current. By examining GO thin films reduced at different temperatures, the critical temperature for reversing the photocurrent from cathodic to anodic was found around 187°C. The dynamic photoresponse for the GO thin film was further characterized through the response time constants within the laser on and off durations, denoted as τon and τoff, respectively. τon for the GO thin film was comparable to the other carbon-based thin films such as carbon nanotubes and graphenes. τoff was, however, much larger than that of the other's. This discrepancy was attributable to the retardation of exciton recombination rate thanks to the existing oxygen functional groups and defects in the GO thin films.

  8. Atomic Structure Control of Silica Thin Films on Pt(111)

    KAUST Repository

    Crampton, Andrew S

    2015-05-27

    Metal oxide thin films grown on metal single crystals are commonly used to model heterogeneous catalyst supports. The structure and properties of thin silicon dioxide films grown on metal single crystals have only recently been thoroughly characterized and their spectral properties well established. We report the successful growth of a three- dimensional, vitreous silicon dioxide thin film on the Pt(111) surface and reproduce the closed bilayer structure previously reported. The confirmation of the three dimensional nature of the film is unequivocally shown by the infrared absorption band at 1252 cm−1. Temperature programmed desorption was used to show that this three-dimensional thin film covers the Pt(111) surface to such an extent that its application as a catalyst support for clusters/nanoparticles is possible. The growth of a three-dimensional film was seen to be directly correlated with the amount of oxygen present on the surface after the silicon evaporation process. This excess of oxygen is tentatively attributed to atomic oxygen being generated in the evaporator. The identification of atomic oxygen as a necessary building block for the formation of a three-dimensional thin film opens up new possibilities for thin film growth on metal supports, whereby simply changing the type of oxygen enables thin films with different atomic structures to be synthesized. This is a novel approach to tune the synthesis parameters of thin films to grow a specific structure and expands the options for modeling common amorphous silica supports under ultra high vacuum conditions.

  9. Tension Tests of Copper Thin Films

    Energy Technology Data Exchange (ETDEWEB)

    Park, Kyung Jo; Kim, Chung Youb [Chonnam Nat’l Univ., Gwangju (Korea, Republic of)

    2017-08-15

    Tension tests for copper thin films with thickness of 12 μm were performed by using a digital image correlation method based on consecutive digital images. When calculating deformation using digital image correlation, a large deformation causes errors in the calculated result. In this study, the calculation procedure was improved to reduce the error, so that the full field deformation and the strain of the specimen could be accurately and directly measured on its surface. From the calculated result, it can be seen that the strain distribution is not uniform and its variation is severe, unlike the distribution in a common bulk specimen. This might result from the surface roughness introduced in the films during the fabrication process by electro-deposition.

  10. Seebeck effect of some thin film carbides

    International Nuclear Information System (INIS)

    Beensh-Marchwicka, G.; Prociow, E.

    2002-01-01

    Several materials have been investigated for high-temperature thin film thermocouple applications. These include silicon carbide with boron (Si-C-B), ternary composition based on Si-C-Mn, fourfold composition based on Si-C-Zr-B and tantalum carbide (TaC). All materials were deposited on quartz or glass substrates using the pulse sputter deposition technique. Electrical conduction and thermoelectric power were measured for various compositions at 300-550 K. It has been found, that the efficiency of thermoelectric power of films containing Si-C base composition was varied from 0.0015-0.034 μW/cmK 2 . However for TaC the value about 0.093 μW/cmK 2 was obtained. (author)

  11. TEM characterization of nanodiamond thin films.

    Energy Technology Data Exchange (ETDEWEB)

    Qin, L.-C.; Zhou, D.; Krauss, A. R.; Gruen, D. M.; Chemistry

    1998-05-01

    The microstructure of thin films grown by microwave plasma-enhanced chemical vapor deposition (MPCVD) from fullerene C{sub 60} precursors has been characterized by scanning electron microscopy (SEM), selected-area electron diffraction (SAED), bright-field electron microscopy, high-resolution electron microscopy (HREM), and parallel electron energy loss spectroscopy (PEELS). The films are composed of nanosize crystallites of diamond, and no graphitic or amorphous phases were observed. The diamond crystallite size measured from lattice images shows that most grains range between 3-5 nm, reflecting a gamma distribution. SAED gave no evidence of either sp2-bonded glassy carbon or sp3-bonded diamondlike amorphous carbon. The sp2-bonded configuration found in PEELS was attributed to grain boundary carbon atoms, which constitute 5-10% of the total. Occasionally observed larger diamond grains tend to be highly faulted.

  12. Studies of tantalum nitride thin film resistors

    International Nuclear Information System (INIS)

    Langley, R.A.

    1975-01-01

    Backscattering of 2-MeV He ions was used to correlate the electrical properties of sputtered TaN/sub x/ thin-film resistors with their N content. The properties measured were sheet resistance, differential Seebeck potential (DSP), thermal coefficient of resistance (TCR), and stability. Resistivity and DSP are linearly dependent on N content for N/Ta ratios of 0.25 to 0.55. TCR decreases sharply below N/Ta = 0.35 and is relatively constant from 0.35 to 0.55. Stability is independent of N content. (DLC)

  13. Fundamental Mechanisms of Roughening and Smoothing During Thin Film Deposition

    Energy Technology Data Exchange (ETDEWEB)

    Headrick, Randall [Univ. of Vermont, Burlington, VT (United States)

    2016-03-18

    pulsed nature of the deposition where particles arrive at the growth surface in an interval of a few microseconds. We have observed effects such as transient formation of two dimensional islands on elemental crystalline surfaces. Pulsed deposition may also lead to non-equilibrium phases in some cases, such as the observation anomalously high tetragonality for ferroelectric thin films. All of the results described above feature in-situ synchrotron X-ray scattering as the main experimental method, which has become an indispensable technique for observing the kinetics of structures forming in real-time. We have also investigated in-situ coherent X-ray scattering and have developed methods to characterize temporal correlations that are not possible to observe with low-coherence X-rays. A high profile result of this work is a new technique to monitor defect propagation velocities in thin films. This has practical significance since defects limit the properties of thin films and it is desirable to understand their properties and origin in order to control them for practical applications. More broadly, amorphous thin films and multilayers have applications in optical devices, including mirrors and filters. Epitaxial thin films and multilayers have applications in electronic devices such as ferroelectric multilayers for non-volatile data storage, and thermoelectric nanostructures for energy conversion. Our progress in this project points the way for improved deposition methods and for improved simulation and modeling of thin film deposition processes for nanoscale control of materials with novel applications in these areas.

  14. Methods for producing thin film charge selective transport layers

    Science.gov (United States)

    Hammond, Scott Ryan; Olson, Dana C.; van Hest, Marinus Franciscus Antonius Maria

    2018-01-02

    Methods for producing thin film charge selective transport layers are provided. In one embodiment, a method for forming a thin film charge selective transport layer comprises: providing a precursor solution comprising a metal containing reactive precursor material dissolved into a complexing solvent; depositing the precursor solution onto a surface of a substrate to form a film; and forming a charge selective transport layer on the substrate by annealing the film.

  15. Chemical vapour deposition of thin-film dielectrics

    International Nuclear Information System (INIS)

    Vasilev, Vladislav Yu; Repinsky, Sergei M

    2005-01-01

    Data on the chemical vapour deposition of thin-film dielectrics based on silicon nitride, silicon oxynitride and silicon dioxide and on phosphorus- and boron-containing silicate glasses are generalised. The equipment and layer deposition procedures are described. Attention is focussed on the analysis and discussion of the deposition kinetics and on the kinetic models for film growth. The film growth processes are characterised and data on the key physicochemical properties of thin-film covalent dielectric materials are given.

  16. Characterization of ultrasonic spray pyrolysed ruthenium oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Patil, P.S.; Ennaoui, E.A.; Lokhande, C.D.; Mueller, M.; Giersig, M.; Diesner, K.; Tributsch, H. [Hahn-Meitner-Institut Berlin GmbH (Germany). Bereich Physikalische Chemie

    1997-11-21

    The ultrasonic spray pyrolysis (USP) technique was employed to deposit ruthenium oxide thin films. The films were prepared at 190 C substrate temperature and further annealed at 350 C for 30 min in air. The films were 0.22 {mu} thick and black grey in color. The structural, compositional and optical properties of ruthenium oxide thin films are reported. Contactless transient photoconductivity measurement was carried out to calculate the decay time of excess charge carriers in ruthenium oxide thin films. (orig.) 28 refs.

  17. Nitrogen incorporation in sputter deposited molybdenum nitride thin films

    Energy Technology Data Exchange (ETDEWEB)

    Stöber, Laura, E-mail: laura.stoeber@tuwien.ac.at; Patocka, Florian, E-mail: florian.patocka@tuwien.ac.at; Schneider, Michael, E-mail: michael.schneider@tuwien.ac.at; Schmid, Ulrich, E-mail: ulrich.e366.schmid@tuwien.ac.at [Institute of Sensor and Actuator Systems, TU Wien, Gußhausstraße 27-29, A-1040 Vienna (Austria); Konrath, Jens Peter, E-mail: jenspeter.konrath@infineon.com; Haberl, Verena, E-mail: verena.haberl@infineon.com [Infineon Technologies Austria AG, Siemensstraße 2, 9500 Villach (Austria)

    2016-03-15

    In this paper, the authors report on the high temperature performance of sputter deposited molybdenum (Mo) and molybdenum nitride (Mo{sub 2}N) thin films. Various argon and nitrogen gas compositions are applied for thin film synthetization, and the amount of nitrogen incorporation is determined by Auger measurements. Furthermore, effusion measurements identifying the binding conditions of the nitrogen in the thin film are performed up to 1000 °C. These results are in excellent agreement with film stress and scanning electron microscope analyses, both indicating stable film properties up to annealing temperatures of 500 °C.

  18. Thin Film Packaging Solutions for High Efficiency OLED Lighting Products

    Energy Technology Data Exchange (ETDEWEB)

    None

    2008-06-30

    The objective of the 'Thin Film Packaging Solutions for High Efficiency OLED Lighting Products' project is to demonstrate thin film packaging solutions based on SiC hermetic coatings that, when applied to glass and plastic substrates, support OLED lighting devices by providing longer life with greater efficiency at lower cost than is currently available. Phase I Objective: Demonstrate thin film encapsulated working phosphorescent OLED devices on optical glass with lifetime of 1,000 hour life, CRI greater than 75, and 15 lm/W. Phase II Objective: Demonstrate thin film encapsulated working phosphorescent OLED devices on plastic or glass composite with 25 lm/W, 5,000 hours life, and CRI greater than 80. Phase III Objective: Demonstrate 2 x 2 ft{sup 2} thin film encapsulated working phosphorescent OLED with 40 lm/W, 10,000 hour life, and CRI greater than 85. This report details the efforts of Phase III (Budget Period Three), a fourteen month collaborative effort that focused on optimization of high-efficiency phosphorescent OLED devices and thin-film encapsulation of said devices. The report further details the conclusions and recommendations of the project team that have foundation in all three budget periods for the program. During the conduct of the Thin Film Packaging Solutions for High Efficiency OLED Lighting Products program, including budget period three, the project team completed and delivered the following achievements: (1) a three-year marketing effort that characterized the near-term and longer-term OLED market, identified customer and consumer lighting needs, and suggested prototype product concepts and niche OLED applications lighting that will give rise to broader market acceptance as a source for wide area illumination and energy conservation; (2) a thin film encapsulation technology with a lifetime of nearly 15,000 hours, tested by calcium coupons, while stored at 16 C and 40% relative humidity ('RH'). This encapsulation technology

  19. Lattice cluster theory for dense, thin polymer films.

    Science.gov (United States)

    Freed, Karl F

    2015-04-07

    While the application of the lattice cluster theory (LCT) to study the miscibility of polymer blends has greatly expanded our understanding of the monomer scale molecular details influencing miscibility, the corresponding theory for inhomogeneous systems has not yet emerged because of considerable technical difficulties and much greater complexity. Here, we present a general formulation enabling the extension of the LCT to describe the thermodynamic properties of dense, thin polymer films using a high dimension, high temperature expansion. Whereas the leading order of the LCT for bulk polymer systems is essentially simple Flory-Huggins theory, the highly non-trivial leading order inhomogeneous LCT (ILCT) for a film with L layers already involves the numerical solution of 3(L - 1) coupled, highly nonlinear equations for the various density profiles in the film. The new theory incorporates the essential "transport" constraints of Helfand and focuses on the strict imposition of excluded volume constraints, appropriate to dense polymer systems, rather than the maintenance of chain connectivity as appropriate for lower densities and as implemented in self-consistent theories of polymer adsorption at interfaces. The ILCT is illustrated by presenting examples of the computed profiles of the density, the parallel and perpendicular bonds, and the chain ends for free standing and supported films as a function of average film density, chain length, temperature, interaction with support, and chain stiffness. The results generally agree with expected general trends.

  20. Lattice cluster theory for dense, thin polymer films

    International Nuclear Information System (INIS)

    Freed, Karl F.

    2015-01-01

    While the application of the lattice cluster theory (LCT) to study the miscibility of polymer blends has greatly expanded our understanding of the monomer scale molecular details influencing miscibility, the corresponding theory for inhomogeneous systems has not yet emerged because of considerable technical difficulties and much greater complexity. Here, we present a general formulation enabling the extension of the LCT to describe the thermodynamic properties of dense, thin polymer films using a high dimension, high temperature expansion. Whereas the leading order of the LCT for bulk polymer systems is essentially simple Flory-Huggins theory, the highly non-trivial leading order inhomogeneous LCT (ILCT) for a film with L layers already involves the numerical solution of 3(L − 1) coupled, highly nonlinear equations for the various density profiles in the film. The new theory incorporates the essential “transport” constraints of Helfand and focuses on the strict imposition of excluded volume constraints, appropriate to dense polymer systems, rather than the maintenance of chain connectivity as appropriate for lower densities and as implemented in self-consistent theories of polymer adsorption at interfaces. The ILCT is illustrated by presenting examples of the computed profiles of the density, the parallel and perpendicular bonds, and the chain ends for free standing and supported films as a function of average film density, chain length, temperature, interaction with support, and chain stiffness. The results generally agree with expected general trends

  1. Deposition and characterization of aluminum magnesium boride thin film coatings

    Science.gov (United States)

    Tian, Yun

    Boron-rich borides are a special group of materials possessing complex structures typically comprised of B12 icosahedra. All of the boron-rich borides sharing this common structural unit exhibit a variety of exceptional physical and electrical properties. In this work, a new ternary boride compound AlMgB14, which has been extensively studied in bulk form due to its novel mechanical properties, was fabricated into thin film coatings by pulsed laser deposition (PLD) technology. The effect of processing conditions (laser operating modes, vacuum level, substrate temperature, and postannealing, etc.) on the composition, microstructure evolution, chemical bonding, and surface morphology of AlMgB14 thin film coatings has been investigated by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), transmission electron microscopy (TEM), atomic force microscopy (AFM) and Fourier transform infrared (FTIR) spectrometry; the mechanical, electrical, and optical properties of AlMgB14 thin films have been characterized by nanoindentation, four-point probe, van der Pauw Hall measurement, activation energy measurement, and UV-VIS-NIR spectrophotometer. Experimental results show that AlMgB14 films deposited in the temperature range of 300 K - 873 K are amorphous. Depositions under a low vacuum level (5 x 10-5 Torr) can introduce a significant amount of C and O impurities into AlMgB14 films and lead to a complex oxide glass structure. Orthorhombic AlMgB14 phase cannot be obtained by subsequent high temperature annealing. By contrast, the orthorhombic AlMgB 14 crystal structure can be attained via high temperature-annealing of AlMgB14 films deposited under a high vacuum level (boride films, high vacuum level-as deposited AlMgB14 films also possess a low n-type electrical resistivity, which is a consequence of high carrier concentration and moderate carrier mobility. The operative electrical transport mechanism and doping behavior for high vacuum level-as deposited AlMgB14

  2. Recent progress of obliquely deposited thin films for industrial applications

    Science.gov (United States)

    Suzuki, Motofumi; Itoh, Tadayoshi; Taga, Yasunori

    1999-06-01

    More than 10 years ago, birefringent films of metal oxides were formed by oblique vapor deposition and investigated with a view of their application to optical retardation plates. The retardation function of the films was explained in terms of the birefringence caused by the characteristic anisotropic nanostructure inside the films. These films are now classified in the genre of the so-called sculptured thin films. However, the birefringent films thus prepared are not yet industrialized even now due to the crucial lack of the durability and the yield of products. In this review paper, we describe the present status of application process of the retardation films to the information systems such as compact disc and digital versatile disc devices with a special emphasis on the uniformity of retardation properties in a large area and the stability of the optical properties of the obliquely deposited thin films. Finally, further challenges for wide application of the obliquely deposited thin films are also discussed.

  3. Operating method of amorphous thin film semiconductor element

    Energy Technology Data Exchange (ETDEWEB)

    Mori, Koshiro; Ono, Masaharu; Hanabusa, Akira; Osawa, Michio; Arita, Takashi

    1988-05-31

    The existing technologies concerning amorphous thin film semiconductor elements are the technologies concerning the formation of either a thin film transistor or an amorphous Si solar cell on a substrate. In order to drive a thin film transistor for electronic equipment control by the output power of an amorphous Si solar cell, it has been obliged to drive the transistor weth an amorphous solar cell which was formed on a substrate different from that for the transistor. Accordingly, the space for the amorphous solar cell, which was formed on the different substrate, was additionally needed on the substrate for the thin film transistor. In order to solve the above problem, this invention proposes an operating method of an amorphous thin film semiconductor element that after forming an amorphous Si solar cell through lamination on the insulation coating film which covers the thin film transistor formed on the substrate, the thin film transistor is driven by the output power of this solar cell. The invention eliminates the above superfluous space and reduces the size of the amorphous thin film semiconductor element including the electric source. (3 figs)

  4. Stable organic thin-film transistors

    Science.gov (United States)

    Jia, Xiaojia; Fuentes-Hernandez, Canek; Wang, Cheng-Yin; Park, Youngrak; Kippelen, Bernard

    2018-01-01

    Organic thin-film transistors (OTFTs) can be fabricated at moderate temperatures and through cost-effective solution-based processes on a wide range of low-cost flexible and deformable substrates. Although the charge mobility of state-of-the-art OTFTs is superior to that of amorphous silicon and approaches that of amorphous oxide thin-film transistors (TFTs), their operational stability generally remains inferior and a point of concern for their commercial deployment. We report on an exhaustive characterization of OTFTs with an ultrathin bilayer gate dielectric comprising the amorphous fluoropolymer CYTOP and an Al2O3:HfO2 nanolaminate. Threshold voltage shifts measured at room temperature over time periods up to 5.9 × 105 s do not vary monotonically and remain below 0.2 V in microcrystalline OTFTs (μc-OTFTs) with field-effect carrier mobility values up to 1.6 cm2 V−1 s−1. Modeling of these shifts as a function of time with a double stretched-exponential (DSE) function suggests that two compensating aging mechanisms are at play and responsible for this high stability. The measured threshold voltage shifts at temperatures up to 75°C represent at least a one-order-of-magnitude improvement in the operational stability over previous reports, bringing OTFT technologies to a performance level comparable to that reported in the scientific literature for other commercial TFTs technologies. PMID:29340301

  5. Properties of superconducting thin-film microbridges

    International Nuclear Information System (INIS)

    Pei, S.S.

    1978-01-01

    This work reports investigations upon the dependences of critical current and current phase relation on the dimensions of a superconducting thin-film microbridge. A model has been developed upon the Volkov's hyperbolic bridges and the Zaitsev's boundary conditions to calculate the spatial variation of the order parameter for given bridge dimensions. The results indicate that the rigid boundary conditions are good approximations to narrow bridges (W much less than L) only. The critical current density of the bridge has been calculated also as a function of the bridge dimensions. It is found that the critical current density of small bridges is enhanced above its mean field critical value due to the proximity effects of the banks. Very good agreement is found between the calculated enhancement of the critical current density and the experimental results. Direct measurements have been made on the current phase relation of indium bridges with width smaller than 0.6 μm. The difficulties due to the extra phase shifts from the series thin film electrodes are overcome by a specially designed double loop configuration which has an extra low effective inductance. It is found that the current phase relation of small bridges (W,L, xi, the results agree with the predictions of rigid boundary calculations as expected by our model

  6. Surface texture modification of spin-coated SiO2 xerogel thin films ...

    Indian Academy of Sciences (India)

    hydrolysis and condensation of tetraethylorthosilicate (TEOS) with ethanol as a solvent. Further, the deposited thin films were ... termed as hydrolysis and condensation that occur simultane- ously in the formation of silica films. ... rial leads to capillary tensions, which destroy the structure of silica (Naik and Ghosh 2009).

  7. Optical characteristics of the thin-film scintillator detector

    International Nuclear Information System (INIS)

    Muga, L.; Burnsed, D.

    1976-01-01

    A study of the thin-film detector (TFD) was made in which various light guide and scintillator film support configurations were tested for efficiency of light coupling. Masking of selected portions of the photomultiplier (PM) tube face revealed the extent to which emitted light was received at the exposed PM surfaces. By blocking off selected areas of the scintillator film surface from direct view of the PM tube faces, a measure of the light-guiding efficiency of the film and its support could be estimated. The picture that emerges is that, as the light which is initially trapped in the thin film spreads radially outward from the ion entrance/exit point, it is scattered out of the film by minute imperfections. Optimum signals were obtained by a configuration in which the thin scintillator film was supported on a thin rectangular Celluloid frame inserted within a highly polished metal cylindrical sleeve

  8. Polycystalline silicon thin films for electronic applications

    Energy Technology Data Exchange (ETDEWEB)

    Jaeger, Christian Claus

    2012-01-15

    For the thin polycrystalline Si films fabricated with the aluminium-induced-layer-exchange (ALILE) process a good structural quality up to a layer-thickness value of 10 nm was determined. For 5 nm thick layers however after the layer exchange no closes poly-silicon film was present. In this case the substrate was covered with spherically arranged semiconductor material. Furthermore amorphous contributions in the layer could be determined. The electrical characterization of the samples at room temperature proved a high hole concentration in the range 10{sup 18} cm{sup -3} up to 9.10{sup 19} cm{sup -3}, which is influenced by the process temperature and the layer thickness. Hereby higher hole concentrations at higher process temperatures and thinner films were observed. Furthermore above 150-200 K a thermically activated behaviour of the electrical conductivity was observed. At lower temperatures a deviation of the measured characteristic from the exponential Arrhenius behaviour was determined. For low temperatures (below 20 K) the conductivity follows the behaviour {sigma}{proportional_to}[-(T{sub 0}/T){sup 1/4}]. The hole mobility in the layers was lowered by a passivation step, which can be explained by defect states at the grain boundaries. The for these very thin layers present situation was simulated in the framework of the model of Seto, whereby both the defect states at the grain boundaries (with an area density Q{sub t}) and the defect states at the interfaces (with an area density Q{sub it}) were regarded. By this the values Q{sub t}{approx}(3-4).10{sup 12} cm{sup -2} and Q{sub it}{approx}(2-5).10{sup 12} cm{sup -2} could be determined for these thin ALILE layers on quartz substrates. Additionally th R-ALILE process was studied, which uses the reverse precursor-layer sequence substrate/amorphous silicon/oxide/aluminium. Hereby two steps in the crystallization process of the R-ALILE process were found. First a substrate/Al-Si mixture/poly-Si layer structure

  9. Photoluminescence of electron beam evaporated CaS:Bi thin films

    CERN Document Server

    Smet, P F; Poelman, D R; Meirhaeghe, R L V

    2003-01-01

    For the first time, the photoluminescence (PL) of electron beam evaporated CaS:Bi thin films is reported. Luminescent CaS:Bi powder prepared out of aqueous solutions was used as source material. The influence of substrate temperature on the PL and the morphology of thin films is discussed, and an optimum is determined. Substrate temperatures between 200 deg. C and 300 deg. C lead to good quality thin films with sufficient PL intensity. As-deposited thin films show two emission bands, peaking at 450 and 530 nm. Upon annealing the emission intensity increases, and annealing at 800 deg. C is sufficient to obtain a homogeneously blue emitting thin film (CIE colour coordinates (0.17; 0.12)), thanks to a single remaining emission band at 450 nm. The influence of ambient temperature on the PL of CaS:Bi powder and thin films was also investigated and it was found that CaS:Bi thin films show a favourable thermal quenching behaviour near room temperature.

  10. Optical constants and structural properties of thin gold films

    DEFF Research Database (Denmark)

    Yakubovsky, Dmitry I.; Arsenin, Aleksey V.; Stebunov, Yury V.

    2017-01-01

    We report a comprehensive experimental study of optical and electrical properties of thin polycrystalline gold films in a wide range of film thicknesses (from 20 to 200 nm). Our experimental results are supported by theoretical calculations based on the measured morphology of the fabricated gold...... rules for thin-film plasmonic and nanophotonic devices....... films. We demonstrate that the dielectric function of the metal is determined by its structural morphology. Although the fabrication process can be absolutely the same for different films, the dielectric function can strongly depend on the film thickness. Our studies show that the imaginary part...

  11. Thinning and rupture of a thin liquid film on a heated surface

    Energy Technology Data Exchange (ETDEWEB)

    Bankoff, S.G.; Davis, S.H.

    1992-08-05

    Results on the dynamics and stability of thin films are summarized on the following topics: forced dryout, film instabilities on a horizontal plane and on inclined planes, instrumentation, coating flows, and droplet spreading. (DLC)

  12. Microbridge tests on gallium nitride thin films

    International Nuclear Information System (INIS)

    Huang, Hai-You; Li, Zhi-Ying; Lu, Jun-Yong; Wang, Zhi-Jia; Zhang, Tong-Yi; Wang, Chong-Shun; Lau, Kei-May; Chen, Kevin Jing

    2009-01-01

    In this work, we develop further the microbridge testing method by deriving a closed formula of deflection versus load, which is applied at an arbitrary position on the microbridge beam. Testing a single beam at various positions allows us to characterize simultaneouslyYoung's modulus and residual stress of the beam. The developed method was then used to characterize the mechanical properties of GaN thin films on patterned-Si (1 1 1) substrates grown by metal organic chemical vapor deposition (MOCVD). The microbridge samples were fabricated by using the microelectromechanical fabrication technique and tested with a nanoindentation system. Young's modulus and residual stress of the GaN films were determined to be 287 ± 190 GPa and 851 ± 155 MPa, respectively. In addition, alternative measurements of the residual stress, Young's modulus and hardness of the GaN films, were conducted with micro-Raman spectroscopy and the nanoindentation test, yielding the corresponding values of 847 ± 46 MPa, 269.0 ± 7.0 GPa and 17.8 ± 1.1 GPa

  13. Surface microtopography of thin silver films

    Science.gov (United States)

    Costa, Manuel F. M.; Almeida, Jose B.

    1991-01-01

    The authors present ne applications for the recently developed nori-contact optical inicrotopographer emphasizing the results of topographic inspections of thin silver films edges. These films were produced by sputtering of silver through different masks, using a planar magnetron source. The results show the influence ot the thickness and position of the masks on the topography of the film near its edge. Topographic information is obtained from the horizontal shift incurred by the bright spot on an horizontal surface, which is displaced vertically, when this is illuminated by an oblique collimated laser beam. The laser beam is focused onto the surface into a diffraction limited spot and is made to sweep the surface to be examined.. The horizontal position of the bright spot is continuously imaged onto a light detector array and the information about individual detectors that are activated is used to compute the corresponding horizontal shift on the reference plane. Simple trignometric calculations are used to relate the horizontal shift to the distance between the surface and a reference plane at each sampling point and thus a map of the surface topography can be built.

  14. Controlled nanostructuration of polycrystalline tungsten thin films

    Energy Technology Data Exchange (ETDEWEB)

    Girault, B. [Institut P' (UPR 3346 CNRS), Universite de Poitiers, ENSMA, Bd Pierre et Marie Curie, 86962 Futuroscope Cedex (France); Institut de Recherche en Genie Civil et Mecanique (UMR CNRS 6183), LUNAM Universite, Universite de Nantes, Centrale Nantes, CRTT, 37 Bd de l' Universite, BP 406, 44602 Saint-Nazaire Cedex (France); Eyidi, D.; Goudeau, P.; Guerin, P.; Bourhis, E. Le; Renault, P.-O. [Institut P' (UPR 3346 CNRS), Universite de Poitiers, ENSMA, Bd Pierre et Marie Curie, 86962 Futuroscope Cedex (France); Sauvage, T. [CEMHTI/CNRS (UPR 3079 CNRS), Universite d' Orleans, 3A rue de la Ferollerie, 45071 Orleans Cedex 2 (France)

    2013-05-07

    Nanostructured tungsten thin films have been obtained by ion beam sputtering technique stopping periodically the growing. The total thickness was maintained constant while nanostructure control was obtained using different stopping periods in order to induce film stratification. The effect of tungsten sublayers' thicknesses on film composition, residual stresses, and crystalline texture evolution has been established. Our study reveals that tungsten crystallizes in both stable {alpha}- and metastable {beta}-phases and that volume proportions evolve with deposited sublayers' thicknesses. {alpha}-W phase shows original fiber texture development with two major preferential crystallographic orientations, namely, {alpha}-W<110> and unexpectedly {alpha}-W<111> texture components. The partial pressure of oxygen and presence of carbon have been identified as critical parameters for the growth of metastable {beta}-W phase. Moreover, the texture development of {alpha}-W phase with two texture components is shown to be the result of a competition between crystallographic planes energy minimization and crystallographic orientation channeling effect maximization. Controlled grain size can be achieved for the {alpha}-W phase structure over 3 nm stratification step. Below, the {beta}-W phase structure becomes predominant.

  15. Superhydrophilicity of TiO2 nano thin films

    International Nuclear Information System (INIS)

    Mohammadizadeh, M.R.; Ashkarran, A.A.

    2007-01-01

    Full text: Among the several oxide semiconductors, titanium dioxide has a more helpful role in our environmental purification due to its photocatalytic activity, photo-induced superhydrophilicity, and as a result of them non-toxicity, self cleaning, and antifogging effects. After the discovery of superhydrophilicity of titanium dioxide in 1997, several researches have been performed due to its nature and useful applications. The superhydrophilicity property of the surface allows water to spread completely across the surface rather than remains as droplets, thus making the surface antifog and easy-to-clean. The distinction of photo-induced catalytic and hydrophilicity properties of TiO 2 thin films has been accepted although, the origin of hydrophilicity property has not been recognized completely yet. TiO 2 thin films on soda lime glass were prepared by the sol-gel method and spin coating process. The calcination temperature was changed from 100 to 550 C. XRD patterns show increasing the content of polycrystalline anatase phase with increasing the calcination temperature. The AFM results indicate granular morphology of the films, which particle size changes from 22 to 166 nm by increasing the calcination temperature. The RBS, EDX and Raman spectroscopy of the films show the ratio of Ti:O∼0.5, and diffusion of sodium ions from substrate into the layer, by increasing the calcination temperature. The UV/Vis. spectroscopy of the films indicates a red shift by increasing the calcination temperature. The contact angle meter experiment shows that superhydrophilicity of the films depends on the formation of anatase crystal structure and diffused sodium content from substrate to the layer. The best hydrophilicity property was observed at 450 C calcination temperature, where the film is converted to a superhydrophilic surface after 10 minutes under 2mW/cm 2 UV irradiation. TiO 2 thin film on Si(111), Si(100), and quartz substrates needs less time to be converted to

  16. Analysis of the silicon market: Will thin films profit?

    International Nuclear Information System (INIS)

    Sark, W.G.J.H.M. van; Brandsen, G.W.; Fleuster, M.; Hekkert, M.P.

    2007-01-01

    The photovoltaic industry has been growing with astonishing rates over the past years. The supply of silicon to the wafer-based industry has recently become a problem. This paper presents a thorough analysis of the PV industry and quantifies the silicon shortage. It is expected that this leads to a decrease in production in 2006 rather than the usual increase. Due to a mismatch in expansion plans of silicon feedstock manufacturers and solar cell manufacturers, a large cell overcapacity will persist up to 2010. The thin-film PV market is expected to profit from the silicon shortage problem; its market share may substantially increase to about 25% in 2010

  17. Analysis of the silicon market: Will thin films profit?

    Energy Technology Data Exchange (ETDEWEB)

    Sark, W.G.J.H.M. van; Brandsen, G.W. [Copernicus Institute for Sustainable Development and Innovation, Utrecht University, Utrecht (Netherlands). Department of Science, Technology and Society; Fleuster, M. [Solland Solar Energy, Heerlen (Netherlands); Hekkert, M.P. [Copernicus Institute for Sustainable Development and Innovation, Utrecht University, Utrecht (Netherlands). Department of Innovation Studies

    2007-06-15

    The photovoltaic industry has been growing with astonishing rates over the past years. The supply of silicon to the wafer-based industry has recently become a problem. This paper presents a thorough analysis of the PV industry and quantifies the silicon shortage. It is expected that this leads to a decrease in production in 2006 rather than the usual increase. Due to a mismatch in expansion plans of silicon feedstock manufacturers and solar cell manufacturers, a large cell overcapacity will persist up to 2010. The thin-film PV market is expected to profit from the silicon shortage problem; its market share may substantially increase to about 25% in 2010. (author)

  18. Thin-film intermediate band chalcopyrite solar cells

    International Nuclear Information System (INIS)

    Fuertes Marron, D.; Marti, A.; Luque, A.

    2009-01-01

    Chalcopyrite-based solar cells currently lead the efficiency tables of thin-film photovoltaic technologies. Further improvements are foreseen upon implementation of an intermediate band in the absorber layers. We present a theoretical analysis of the efficiency limit for this type of device as a function of factors such as the gap of the host, the relative position of the intermediate band with respect to the band edge and the level of light concentration used as illumination. We have also considered the impact of non-idealities on the performance of the device, particularly the effect of electronic losses related to non-radiative recombination

  19. Thin films of molecular metals TTF-TCNQ

    International Nuclear Information System (INIS)

    Fraxedas, J.; Molas, S.; Figueras, A.; Jimenez, I.; Gago, R.; Auban-Senzier, P.; Goffman, M.

    2002-01-01

    We present recent results on the characterization of highly ordered polycrystalline thin films of the charge transfer salt TTF-TCNQ (TTF=tetrathiafulvalene, TCNQ=tetracyanoquinodimethane) prepared by thermal sublimation in high vacuum under different conditions. The increase in orientation and microcrystal size as a function of substrate and annealing temperatures is addressed. A consequence of such an increase is the reduction of the conductivity activation energy, which eventually leads to the observation of the Peierls transition by resistivity measurements. X-ray absorption near edge spectroscopy studies performed with synchrotron radiation reveal directly the influence of charge transfer on unoccupied states near the Fermi level

  20. Thin films of molecular metals TTF-TCNQ

    CERN Document Server

    Fraxedas, J; Figueras, A; Jimenez, I; Gago, R; Auban-Senzier, P; Goffman, M

    2002-01-01

    We present recent results on the characterization of highly ordered polycrystalline thin films of the charge transfer salt TTF-TCNQ (TTF=tetrathiafulvalene, TCNQ=tetracyanoquinodimethane) prepared by thermal sublimation in high vacuum under different conditions. The increase in orientation and microcrystal size as a function of substrate and annealing temperatures is addressed. A consequence of such an increase is the reduction of the conductivity activation energy, which eventually leads to the observation of the Peierls transition by resistivity measurements. X-ray absorption near edge spectroscopy studies performed with synchrotron radiation reveal directly the influence of charge transfer on unoccupied states near the Fermi level.

  1. Surfactant induced flows in thin liquid films : an experimental study

    NARCIS (Netherlands)

    Sinz, D.K.N.

    2012-01-01

    The topic of the experimental work summarized in my thesis is the flow in thin liquid films induced by non-uniformly distributed surfactants. The flow dynamics as a consequence of the deposition of a droplet of an insoluble surfactant onto a thin liquid film covering a solid substrate where

  2. Optimized grid design for thin film solar panels

    NARCIS (Netherlands)

    Deelen, J. van; Klerk, L.; Barink, M.

    2014-01-01

    There is a gap in efficiency between record thin film cells and mass produced thin film solar panels. In this paper we quantify the effect of monolithic integration on power output for various configurations by modeling and present metallization as a way to improve efficiency of solar panels. Grid

  3. Dynamics of a spreading thin film with gravitational counterflow ...

    Indian Academy of Sciences (India)

    film climbing up on a vertical substrate against gravity shows interesting dynamics ... For the spreading of a thin film several theoretical studies have shown quantitative agree- ..... The two critical values of this param- ... Davis J M, Fischer B J and Troian S M 2003 A general approach to the linear stability of thin spreading.

  4. Plastic response of thin films due to thermal cycling

    NARCIS (Netherlands)

    Nicola, L.; van der Giessen, E.; Needleman, A.; Ahzi, S; Cherkaoui, M; Khaleel, MA; Zbib, HM; Zikry, MA; Lamatina, B

    2004-01-01

    Discrete dislocation simulations of thin films on semi-infinite substrates under cyclic thermal loading are presented. The thin film is modelled as a two-dimensional single crystal under plane strain conditions. Dislocations of edge character can be generated from initially present sources and glide

  5. Cadmium sulphide thin film for application in gamma radiation ...

    African Journals Online (AJOL)

    Cadmium Sulphide (CdS) thin film was prepared using pyrolytic spraying technique and then irradiated at varied gamma dosage. The CdS thin film absorption before gamma irradiation was 0.6497. Absorbed doses were computed using standard equation established for an integrating dosimeter. The plot of absorbed dose ...

  6. Electrical properties of epitaxially grown VOx thin films

    NARCIS (Netherlands)

    Rata, A.D.; Chezan, A.R; Presura, C.N.; Hibma, T

    2003-01-01

    High quality VOx thin films on MgO(100) substrates were prepared and studied from the structural and electronic point of view. Epitaxial growth was confirmed by RHEED and XRD techniques. The oxygen content of VOx thin films as a function of oxygen flux was determined using RBS. The upper and lower

  7. Determination of oxygen diffusion kinetics during thin film ruthenium oxidation

    NARCIS (Netherlands)

    Coloma Ribera, R.; van de Kruijs, Robbert Wilhelmus Elisabeth; Yakshin, Andrey; Bijkerk, Frederik

    2015-01-01

    In situ X-ray reflectivity was used to reveal oxygen diffusion kinetics for thermal oxidation of polycrystalline ruthenium thin films and accurate determination of activation energies for this process. Diffusion rates in nanometer thin RuO2 films were found to show Arrhenius behaviour. However, a

  8. Thin films of metal-organic compounds and metal nanoparticle

    Indian Academy of Sciences (India)

    Thin films of metal-organic compounds and metal nanoparticle-embedded polymers for nonlinear optical applications. S Philip Anthony Shatabdi Porel D ... Thin films based on two very different metal-organic systems are developed and some nonlinear optical applications are explored. A family of zinc complexes which ...

  9. Fabrication and Performance Study of Uniform Thin Film Integrated ...

    African Journals Online (AJOL)

    The transmission line model of a uniform rectangular thin film R-C-KR structure consisting of a dielectric layer of constant per unit shunt capacitance C sandwiched between two resistive thin films of constant per unit length resistances R and KR has been analysed using the concept of matrix parameter functions. The above ...

  10. Thermal stability of gold-PS nanocomposites thin films

    Indian Academy of Sciences (India)

    Low-temperature transmission electron microscopy (TEM) studies were performed on polystyrene (PS, w = 234 K) – Au nanoparticle composite thin films that were annealed up to 350°C under reduced pressure conditions. The composite thin films were prepared by wet chemical approach and the samples were then ...

  11. Thermal properties and stabilities of polymer thin films

    International Nuclear Information System (INIS)

    Kanaya, Toshiji; Kawashima, Kazuko; Inoue, Rintaro; Miyazaki, Tsukasa

    2009-01-01

    Recent extensive studies have revealed that polymer thin films showed very interesting but unusual thermal properties and stabilities. In the article we show that X-ray reflectivity and neutron reflectivity are very powerful tools to study the anomalous properties of polymer thin films. (author)

  12. Piezoelectric MEMS: Ferroelectric thin films for MEMS applications

    Science.gov (United States)

    Kanno, Isaku

    2018-04-01

    In recent years, piezoelectric microelectromechanical systems (MEMS) have attracted attention as next-generation functional microdevices. Typical applications of piezoelectric MEMS are micropumps for inkjet heads or micro-gyrosensors, which are composed of piezoelectric Pb(Zr,Ti)O3 (PZT) thin films and have already been commercialized. In addition, piezoelectric vibration energy harvesters (PVEHs), which are regarded as one of the key devices for Internet of Things (IoT)-related technologies, are promising future applications of piezoelectric MEMS. Significant features of piezoelectric MEMS are their simple structure and high energy conversion efficiency between mechanical and electrical domains even on the microscale. The device performance strongly depends on the function of the piezoelectric thin films, especially on their transverse piezoelectric properties, indicating that the deposition of high-quality piezoelectric thin films is a crucial technology for piezoelectric MEMS. On the other hand, although the difficulty in measuring the precise piezoelectric coefficients of thin films is a serious obstacle in the research and development of piezoelectric thin films, a simple unimorph cantilever measurement method has been proposed to obtain precise values of the direct or converse transverse piezoelectric coefficient of thin films, and recently this method has become to be the standardized testing method. In this article, I will introduce fundamental technologies of piezoelectric thin films and related microdevices, especially focusing on the deposition of PZT thin films and evaluation methods for their transverse piezoelectric properties.

  13. Density functional study of ferromagnetism in alkali metal thin films

    Indian Academy of Sciences (India)

    thickness uniform jellium model (UJM), and it is argued that within LSDA or GGA, alkali metal thin films cannot be claimed to have an FM ground state. Relevance of these results to the experiments on transition metal-doped alkali metal thin films ...

  14. Magnetic damping phenomena in ferromagnetic thin-films and multilayers

    Science.gov (United States)

    Azzawi, S.; Hindmarch, A. T.; Atkinson, D.

    2017-11-01

    Damped ferromagnetic precession is an important mechanism underpinning the magnetisation processes in ferromagnetic materials. In thin-film ferromagnets and ferromagnetic/non-magnetic multilayers, the role of precession and damping can be critical for spintronic device functionality and as a consequence there has been significant research activity. This paper presents a review of damping in ferromagnetic thin-films and multilayers and collates the results of many experimental studies to present a coherent synthesis of the field. The terms that are used to define damping are discussed with the aim of providing consistent definitions for damping phenomena. A description of the theoretical basis of damping is presented from early developments to the latest discussions of damping in ferromagnetic thin-films and multilayers. An overview of the time and frequency domain methods used to study precessional magnetisation behaviour and damping in thin-films and multilayers is also presented. Finally, a review of the experimental observations of magnetic damping in ferromagnetic thin-films and multilayers is presented with the most recent explanations. This brings together the results from many studies and includes the effects of ferromagnetic film thickness, the effects of composition on damping in thin-film ferromagnetic alloys, the influence of non-magnetic dopants in ferromagnetic films and the effects of combining thin-film ferromagnets with various non-magnetic layers in multilayered configurations.

  15. Synthesis and characterization of boron incorporated diamond-like carbon thin films

    International Nuclear Information System (INIS)

    Zhang, L.L.; Yang, Q.; Tang, Y.; Yang, L.; Zhang, C.; Hu, Y.; Cui, X.

    2015-01-01

    Boron incorporated diamond-like carbon (B-DLC) (up to 8 wt.% boron) thin films were synthesized on silicon wafers using biased target ion beam deposition technique, where diamond-like carbon (DLC) was deposited by ion beam deposition and boron (B) was simultaneously incorporated by biased target sputtering of a boron carbide (B 4 C) target under different conditions. Pure DLC films and B–C films were also synthesized by ion beam deposition and biased target sputtering of B 4 C under similar conditions, respectively, as reference samples. The microstructure and mechanical properties of the synthesized films have been characterized by various technologies. It has been found that B exists in different states in B-DLC, including carbon-rich and B-rich boron carbides, boron suboxide and boron oxide, and the oxidation of B probably occurs during the film deposition. The incorporation of B into DLC leads to the increase of sp 3 bonded carbon in the films, the increase of both film hardness and elastic modulus, and the decrease of both surface roughness and friction coefficient. Furthermore, the content of sp 3 bonded carbon, film hardness and elastic modulus increase, and the film surface roughness and friction coefficient decrease with the increase of B-rich carbide in the B-DLC films. - Highlights: • Biased target ion beam deposition technique is promising to produce high quality DLC based thin films; • Boron exists in different states in B-DLC thin films; • The incorporation of B to DLC with different levels leads to improved film properties; • The fraction of sp 3 bonded C in B-DLC thin films increase with the increase of B-rich carbide content in the films

  16. Nanocoatings and ultra-thin films technologies and applications

    CERN Document Server

    Tiginyanu, Ion

    2011-01-01

    Gives a comprehensive account of the developments of nanocoatings and ultra-thin films. This book covers the fundamentals, processes of deposition and characterisation of nanocoatings, as well as the applications. It is suitable for the glass and glazing, automotive, electronics, aerospace, construction and biomedical industries in particular.$bCoatings are used for a wide range of applications, from anti-fogging coatings for glass through to corrosion control in the aerospace and automotive industries. Nanocoatings and ultra-thin films provides an up-to-date review of the fundamentals, processes of deposition, characterisation and applications of nanocoatings. Part one covers technologies used in the creation and analysis of thin films, including chapters on current and advanced coating technologies in industry, nanostructured thin films from amphiphilic molecules, chemical and physical vapour deposition methods and methods for analysing nanocoatings and ultra-thin films. Part two focuses on the applications...

  17. Room temperature ferroelectricity in continuous croconic acid thin films

    Energy Technology Data Exchange (ETDEWEB)

    Jiang, Xuanyuan; Lu, Haidong; Yin, Yuewei; Ahmadi, Zahra; Costa, Paulo S. [Department of Physics and Astronomy, University of Nebraska, Lincoln, Nebraska 68588 (United States); Zhang, Xiaozhe [Department of Physics and Astronomy, University of Nebraska, Lincoln, Nebraska 68588 (United States); Department of Physics, Xi' an Jiaotong University, Xi' an 710049 (China); Wang, Xiao; Yu, Le; Cheng, Xuemei [Department of Physics, Bryn Mawr College, Bryn Mawr, Pennsylvania 19010 (United States); DiChiara, Anthony D. [Advanced Photon Source, Argonne National Laboratory, Argonne, Illinois 60439 (United States); Gruverman, Alexei, E-mail: alexei-gruverman@unl.edu, E-mail: a.enders@me.com, E-mail: xiaoshan.xu@unl.edu; Enders, Axel, E-mail: alexei-gruverman@unl.edu, E-mail: a.enders@me.com, E-mail: xiaoshan.xu@unl.edu; Xu, Xiaoshan, E-mail: alexei-gruverman@unl.edu, E-mail: a.enders@me.com, E-mail: xiaoshan.xu@unl.edu [Department of Physics and Astronomy, University of Nebraska, Lincoln, Nebraska 68588 (United States); Nebraska Center for Materials and Nanoscience, University of Nebraska, Lincoln, Nebraska 68588 (United States)

    2016-09-05

    Ferroelectricity at room temperature has been demonstrated in nanometer-thin quasi 2D croconic acid thin films, by the polarization hysteresis loop measurements in macroscopic capacitor geometry, along with observation and manipulation of the nanoscale domain structure by piezoresponse force microscopy. The fabrication of continuous thin films of the hydrogen-bonded croconic acid was achieved by the suppression of the thermal decomposition using low evaporation temperatures in high vacuum, combined with growth conditions far from thermal equilibrium. For nominal coverages ≥20 nm, quasi 2D and polycrystalline films, with an average grain size of 50–100 nm and 3.5 nm roughness, can be obtained. Spontaneous ferroelectric domain structures of the thin films have been observed and appear to correlate with the grain patterns. The application of this solvent-free growth protocol may be a key to the development of flexible organic ferroelectric thin films for electronic applications.

  18. Room temperature deposition of magnetite thin films on organic substrate

    International Nuclear Information System (INIS)

    Arisi, E.; Bergenti, I.; Cavallini, M.; Murgia, M.; Riminucci, A.; Ruani, G.; Dediu, V.

    2007-01-01

    We report on the growth of magnetite films directly on thin layers of organic semiconductors by means of an electron beam ablation method. The deposition was performed at room temperature in a reactive plasma atmosphere. Thin films show ferromagnetic (FM) hysteresis loops and coercive fields of hundreds of Oersted. Micro Raman analysis indicates no presence of spurious phases. The morphology of the magnetite film is strongly influenced by the morphology of the underlayer of the organic semiconductor. These results open the way for the application of magnetite thin films in the field of organic spintronics

  19. Characterization of PZT thin films on metal substrates

    International Nuclear Information System (INIS)

    Dutschke, A.

    2008-01-01

    Lead zirconate titanate (PbZr x Ti 1-x O 3 ,PZT) is one of the most applied ceramic materials because of its distinctive piezo- and ferroelectric properties. Prepared as thin films on flexible, metallic substrates it can be used for various applications as strain gauges, key switches, vibration dampers, microactuators and ultrasonic transducers. The aim of this work is to analyze the microstructure and the phase-content of PZT-thin films deposited on temperature- und acid-resistant hastelloy-sheets, to correlate the results with the ferroelectric and dielectric properties. It is demonstrated, that the specific variation of the microstructure can be achieved by different thermal treatments and the selective addition of Neodymium as dopant. Nd-doping leads to a shift of the maximum nucleation rate towards reduced temperatures and a decrease in the rate of growth compared to undoped films. The PZT-films are prepared by a sol-gel-process in fourfold multilayers with a composition near the morphotropic phase boundary, where the tetragonal und rhombohedral perovskite-phases coexist. The crystallisation in Nd-doped and undoped films takes place heterogeneously, preferentially at the interfaces and on the surface of the multilayered films as well as on the inner surface of pores within the films. For the first time, the Zr:Ti fluctuation phenomena emerging in sol-gel derived PZT films is related to the microstructure and the local phase content on a nanometer scale. In this connection it is proved, that long-distance Zr:Ti gradients arise preferentially before and during the crystallisation of the pyrochlore phase. During the following crystallisation of the perovskite phase, the crystallites grow across these gradients without modifying them. It is pointed out that the fluctuation in the Zr:Ti ratio has only minor influence on the amount of the tetragonal or rhombohedral distortion of the crystallites after the transition from the para- to the ferroelectric state due to

  20. Thin Films for Advanced Glazing Applications

    Directory of Open Access Journals (Sweden)

    Ann-Louise Anderson

    2016-09-01

    Full Text Available Functional thin films provide many opportunities for advanced glazing systems. This can be achieved by adding additional functionalities such as self-cleaning or power generation, or alternately by providing energy demand reduction through the management or modulation of solar heat gain or blackbody radiation using spectrally selective films or chromogenic materials. Self-cleaning materials have been generating increasing interest for the past two decades. They may be based on hydrophobic or hydrophilic systems and are often inspired by nature, for example hydrophobic systems based on mimicking the lotus leaf. These materials help to maintain the aesthetic properties of the building, help to maintain a comfortable working environment and in the case of photocatalytic materials, may provide external pollutant remediation. Power generation through window coatings is a relatively new idea and is based around the use of semi-transparent solar cells as windows. In this fashion, energy can be generated whilst also absorbing some solar heat. There is also the possibility, in the case of dye sensitized solar cells, to tune the coloration of the window that provides unheralded external aesthetic possibilities. Materials and coatings for energy demand reduction is highly desirable in an increasingly energy intensive world. We discuss new developments with low emissivity coatings as the need to replace scarce indium becomes more apparent. We go on to discuss thermochromic systems based on vanadium dioxide films. Such systems are dynamic in nature and present a more sophisticated and potentially more beneficial approach to reducing energy demand than static systems such as low emissivity and solar control coatings. The ability to be able to tune some of the material parameters in order to optimize the film performance for a given climate provides exciting opportunities for future technologies. In this article, we review recent progress and challenges in

  1. Modifying thin film diamond for electronic applications

    International Nuclear Information System (INIS)

    Baral, B.

    1999-01-01

    The unique combination of properties that diamond possesses are being exploited in both electronic and mechanical applications. An important step forward in the field has been the ability to grow thin film diamond by chemical vapour deposition (CVD) methods and to control parameters such as crystal orientation, dopant level and surface roughness. An extensive understanding of the surface of any potential electronic material is vital to fully comprehend its behaviour within device structures. The surface itself ultimately controls key aspects of device performance when interfaced with other materials. This study has provided insight into important chemical reactions on polycrystalline CVD diamond surfaces, addressing how certain surface modifications will ultimately affect the properties of the material. A review of the structure, bonding, properties and potential of diamond along with an account of the current state of diamond technology and CVD diamond growth is provided. The experimental chapter reviews bulk material and surface analytical techniques employed in this work and is followed by an investigation of cleaning treatments for polycrystalline CVD diamond aimed at removing non-diamond carbon from the surface. Selective acid etch treatments are compared and contrasted for efficacy with excimer laser irradiation and hydrogen plasma etching. The adsorption/desorption kinetics of potential dopant-containing precursors on polycrystalline CVD diamond surfaces have been investigated to compare their effectiveness at introducing dopants into the diamond during the growth stage. Both boron and sulphur-containing precursor compounds have been investigated. Treating polycrystalline CVD diamond in various atmospheres / combination of atmospheres has been performed to enhance electron field emission from the films. Films which do not emit electrons under low field conditions can be modified such that they emit at fields as low as 10 V/μm. The origin of this enhancement

  2. The Structure and Stability of Molybdenum Ditelluride Thin Films

    Directory of Open Access Journals (Sweden)

    Zhouling Wang

    2014-01-01

    Full Text Available Molybdenum-tellurium alloy thin films were fabricated by electron beam evaporation and the films were annealed in different conditions in N2 ambient. The hexagonal molybdenum ditelluride thin films with well crystallization annealed at 470°C or higher were obtained by solid state reactions. Thermal stability measurements indicate the formation of MoTe2 took place at about 350°C, and a subtle weight-loss was in the range between 30°C and 500°C. The evolution of the chemistry for Mo-Te thin films was performed to investigate the growth of the MoTe2 thin films free of any secondary phase. And the effect of other postdeposition treatments on the film characteristics was also investigated.

  3. Investigation of ferromagnetism in oxygen deficient hafnium oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Hildebrandt, Erwin; Kurian, Jose; Krockenberger, Yoshiharu; Alff, Lambert [Institut fuer Materialwissenschaft, TU Darmstadt (Germany); Suter, Andreas [PSI, Villingen (Switzerland); Wilhelm, Fabrice; Rogalev, Andrei [ESRF, Grenoble (France)

    2008-07-01

    Oxygen deficient thin films of hafnium oxide were grown on single crystal r-cut and c-cut sapphire by reactive molecular beam epitaxy. RF-activated oxygen was used for the in situ oxidation of hafnium oxide thin films. Oxidation conditions were varied substantially in order to create oxygen deficiency in hafnium oxide films intentionally. The films were characterized by X-ray and magnetic measurements. X-ray diffraction studies show an increase in lattice parameter with increasing oxygen deficiency. Oxygen deficient hafnium oxide thin films also showed a decreasing bandgap with increase in oxygen deficiency. The magnetisation studies carried out with SQUID did not show any sign of ferromagnetism in the whole oxygen deficiency range. X-ray magnetic circular dichroism measurements also confirmed the absence of ferromagnetism in oxygen deficient hafnium oxide thin films.

  4. In vitro behaviour of nanocrystalline silver-sputtered thin films

    International Nuclear Information System (INIS)

    Piedade, A P; Vieira, M T; Martins, A; Silva, F

    2007-01-01

    Silver thin films were deposited with different preferential orientations and special attention was paid to the bioreactivity of the surfaces. The study was essentially focused on the evaluation of the films by x-ray diffraction (XRD), atomic force microscopy (AFM), high-resolution transmission electron microscopy (HRTEM), electron probe microanalysis (EPMA) and contact angle measurements. The deposited thin films were characterized before and after immersion in S-enriched simulated human plasma in order to estimate the influence of the preferential crystallographic orientation on the in vitro behaviour. Silver thin films with and without (111) preferential crystallographic orientation were deposited by r.f. magnetron sputtering to yield nanocrystalline coatings, high compact structures, very hydrophobic surfaces and low roughness. These properties reduce the chemisorption of reactive species onto the film surface. The in vitro tests indicate that silver thin films can be used as coatings for biomaterials applications

  5. Novel photon management for thin-film photovoltaics

    Energy Technology Data Exchange (ETDEWEB)

    Menon, Rajesh [Univ. of Utah, Salt Lake City, UT (United States)

    2016-11-11

    The objective of this project is to enable commercially viable thin-film photovoltaics whose efficiencies are increased by over 10% using a novel optical spectral-separation technique. A thin planar diffractive optic is proposed that efficiently separates the solar spectrum and assigns these bands to optimal thin-film sub-cells. An integrated device that is comprised of the optical element, an array of sub-cells and associated packaging is proposed.

  6. Two-phase behavior in strained thin films of hole-doped manganites

    OpenAIRE

    Biswas, Amlan; Rajeswari, M.; Srivastava, R. C.; Li, Y. H.; Venkatesan, T.; Greene, R. L.; Millis, A. J.

    1999-01-01

    We present a study of the effect of biaxial strain on the electrical and magnetic properties of thin films of manganites. We observe that manganite films grown under biaxial compressive strain exhibit island growth morphology which leads to a non-uniform distribution of the strain. Transport and magnetic properties of these films suggest the coexistence of two different phases, a metallic ferromagnet and an insulating antiferromagnet. We suggest that the high strain regions are insulating whi...

  7. Pulsed laser deposition and characterisation of thin superconducting films

    Energy Technology Data Exchange (ETDEWEB)

    Morone, A [CNR, zona industriale di Tito Scalo, Potenza (Italy). Istituto per i Materiali Speciali

    1996-09-01

    Same concepts on pulsed laser deposition of thin films will be discussed and same examples of high transition temperature (HTc) BiSrCaCuO (BISCO) and low transition temperature NbN/MgO/NbN multilayers will be presented. X-ray and others characterizations of these films will be reported and discussed. Electrical properties of superconducting thin films will be realized as a function of structural and morphological aspect.

  8. Thin film coatings for space electrical power system applications

    Science.gov (United States)

    Gulino, Daniel A.

    1988-01-01

    This paper examines some of the ways in which thin film coatings can play a role in aerospace applications. Space systems discussed include photovoltaic and solar dynamic electric power generation systems, including applications in environmental protection, thermal energy storage, and radiator emittance enhancement. Potential applications of diamondlike films to both atmospheric and space based systems are examined. Also, potential uses of thin films of the recently discovered high-temperature superconductive materials are discussed.

  9. Preparation and optical characterization of DNA-riboflavin thin films

    Science.gov (United States)

    Paulson, Bjorn; Shin, Inchul; Kong, Byungjoo; Sauer, Gregor; Dugasani, Sreekantha Reddy; Khazaeinezhad, Reza; Jung, Woohyun; Joo, Boram; Oh, Kyunghwan

    2016-09-01

    Thin films of DNA biopolymer thin film are fabricated by a drop casting process on glass and silicon substrates, as well as freestanding. The refractive index is measured by elliposmetry and in bulk DNA film the refractive index is shown to be increased in the 600 to 900 nm DNA transparency window by doping with riboflavin. Further analysis with FT-IR, Raman, and XRD are used to determine whether binding between riboflavin and DNA occurs.

  10. Thin film adhesion by nanoindentation-induced superlayers. Final report

    Energy Technology Data Exchange (ETDEWEB)

    Gerberich, William W.; Volinsky, A.A.

    2001-06-01

    This work has analyzed the key variables of indentation tip radius, contact radius, delamination radius, residual stress and superlayer/film/interlayer properties on nanoindentation measurements of adhesion. The goal to connect practical works of adhesion for very thin films to true works of adhesion has been achieved. A review of this work titled ''Interfacial toughness measurements of thin metal films,'' which has been submitted to Acta Materialia, is included.

  11. Ultrahigh Flux Thin Film Boiling Heat Transfer Through Nanoporous Membranes.

    Science.gov (United States)

    Wang, Qingyang; Chen, Renkun

    2018-05-09

    Phase change heat transfer is fundamentally important for thermal energy conversion and management, such as in electronics with power density over 1 kW/cm 2 . The critical heat flux (CHF) of phase change heat transfer, either evaporation or boiling, is limited by vapor flux from the liquid-vapor interface, known as the upper limit of heat flux. This limit could in theory be greater than 1 kW/cm 2 on a planar surface, but its experimental realization has remained elusive. Here, we utilized nanoporous membranes to realize a new "thin film boiling" regime that resulted in an unprecedentedly high CHF of over 1.2 kW/cm 2 on a planar surface, which is within a factor of 4 of the theoretical limit, and can be increased to a higher value if mechanical strength of the membranes can be improved (demonstrated with 1.85 kW/cm 2 CHF in this work). The liquid supply is achieved through a simple nanoporous membrane that supports the liquid film where its thickness automatically decreases as heat flux increases. The thin film configuration reduces the conductive thermal resistance, leads to high frequency bubble departure, and provides separate liquid-vapor pathways, therefore significantly enhances the heat transfer. Our work provides a new nanostructuring approach to achieve ultrahigh heat flux in phase change heat transfer and will benefit both theoretical understanding and application in thermal management of high power devices of boiling heat transfer.

  12. Hafnium carbide formation in oxygen deficient hafnium oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Rodenbücher, C. [Forschungszentrum Jülich GmbH, Peter Grünberg Institute (PGI-7), JARA-FIT, 52425 Jülich (Germany); Hildebrandt, E.; Sharath, S. U.; Kurian, J.; Komissinskiy, P.; Alff, L. [Technische Universität Darmstadt, Institute of Materials Science, 64287 Darmstadt (Germany); Szot, K. [Forschungszentrum Jülich GmbH, Peter Grünberg Institute (PGI-7), JARA-FIT, 52425 Jülich (Germany); University of Silesia, A. Chełkowski Institute of Physics, 40-007 Katowice (Poland); Breuer, U. [Forschungszentrum Jülich GmbH, Central Institute for Engineering, Electronics and Analytics (ZEA-3), 52425 Jülich (Germany); Waser, R. [Forschungszentrum Jülich GmbH, Peter Grünberg Institute (PGI-7), JARA-FIT, 52425 Jülich (Germany); RWTH Aachen, Institute of Electronic Materials (IWE 2), 52056 Aachen (Germany)

    2016-06-20

    On highly oxygen deficient thin films of hafnium oxide (hafnia, HfO{sub 2−x}) contaminated with adsorbates of carbon oxides, the formation of hafnium carbide (HfC{sub x}) at the surface during vacuum annealing at temperatures as low as 600 °C is reported. Using X-ray photoelectron spectroscopy the evolution of the HfC{sub x} surface layer related to a transformation from insulating into metallic state is monitored in situ. In contrast, for fully stoichiometric HfO{sub 2} thin films prepared and measured under identical conditions, the formation of HfC{sub x} was not detectable suggesting that the enhanced adsorption of carbon oxides on oxygen deficient films provides a carbon source for the carbide formation. This shows that a high concentration of oxygen vacancies in carbon contaminated hafnia lowers considerably the formation energy of hafnium carbide. Thus, the presence of a sufficient amount of residual carbon in resistive random access memory devices might lead to a similar carbide formation within the conducting filaments due to Joule heating.

  13. On mobility of ions in thin films in liquid substrates

    International Nuclear Information System (INIS)

    Matveev, Yu.A.

    1984-01-01

    The problem of energy dissipation by emission of ripplons is solved for an ion moving in the media with two interfaces (films on solid and liquid substrates), taking into account the Van der Waals interaction. It is shown that in contrast to the earlier considered case of solid substrate where the action of the Van der Waals forces causes only renormalization of the free fall acceleration, in the vase of liquid substrate the influence of these forces is much more complicated. In addition to renormalization of the amplitude of the emitted surface wave and change of the velocity threshold after which the wave mechanism is effective, in sufficiently thin film, where modes are ''intersected'' the analytical expressions for mobility are also significantly modified. In real experimental environments consideration of all the factors mentioned leads as a rule to higher ion mobility

  14. Optical characterisation of sputtered hydrogenated amorphous silicon thin films

    International Nuclear Information System (INIS)

    Mellassi, K.; Chafik El Idrissi, M.; Chouiyakh, A.; Rjeb, A.; Barhdadi, A.

    2000-09-01

    The present work is devoted to the study of some optical properties of hydrogenated amorphous silicon (a-Si:H) thin films prepared by radio-frequency cathodic sputtering technique. It is essentially focused on investigating separately the effects of increasing partial hydrogen pressure during the deposition stage, and the effects of post deposition thermal annealing on the main optical parameters of the deposited layers (refraction index, optical gap Urbach energy, etc.). We show that low hydrogen pressures allow a saturation of the dangling bonds in the material, while high pressures lead to the creation of new defects. We also show that thermal annealing under moderate temperatures allows a good improvement of the structural quality of deposited films. (author)

  15. Simple turbulence measurements with azopolymer thin films.

    Science.gov (United States)

    Barillé, Regis; Pérez, Darío G; Morille, Yohann; Zielińska, Sonia; Ortyl, Ewelina

    2013-04-01

    A simple method to measure the influence on the laser beam propagation by a turbid medium is proposed. This measurement is based on the inscription of a surface relief grating (SRG) on an azopolymer thin film. The grating obtained with a single laser beam after propagation into a turbulent medium is perturbed and directly analyzed by a CCD camera through its diffraction pattern. Later, by scanning the surface pattern with an atomic force microscope, the inscribed SRG is analyzed with the Radon transform. This method has the advantage of using a single beam to remotely inscribe a grating detecting perturbations during the beam path. A method to evaluate the refractive index constant structure is developed.

  16. Thin film femtosecond laser damage competition

    Science.gov (United States)

    Stolz, Christopher J.; Ristau, Detlev; Turowski, Marcus; Blaschke, Holger

    2009-10-01

    In order to determine the current status of thin film laser resistance within the private, academic, and government sectors, a damage competition was started at the 2008 Boulder Damage Symposium. This damage competition allows a direct comparison of the current state of the art of high laser resistance coatings since they are tested using the same damage test setup and the same protocol. In 2009 a high reflector coating was selected at a wavelength of 786 nm at normal incidence at a pulse length of 180 femtoseconds. A double blind test assured sample and submitter anonymity so only a summary of the results are presented here. In addition to the laser resistance results, details of deposition processes, coating materials and layer count, and spectral results will also be shared.

  17. PZT thin film actuated elastic fin micromotor.

    Science.gov (United States)

    Dubois, M A; Muralt, P

    1998-01-01

    A piezoelectric elastic fin micromotor based on a PbZr(0.53 )Ti(0.47)O(3) thin film driving a micromachined silicon membrane was fabricated and studied. The stator was characterized by interferometry, and a laser set-up was used to measure the angular velocity and acceleration of the motor. The torque, the output power, and the efficiency of the device were extracted from these measurements. Values up to 1020 rpm and 0.94 microNm were observed for the velocity and the torque, respectively, which would be sufficient for a wristwatch application. The present version exhibited an efficiency of 0.17%, which could theoretically be increased to 4.8%

  18. Multiferroics and magnetoelectrics: thin films and nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Martin, L W; Crane, S P; Chu, Y-H; Holcomb, M B; Gajek, M; Huijben, M; Yang, C-H; Balke, N; Ramesh, R [Department of Materials Science and Engineering, University of California, Berkeley, CA 94720 (United States); Department of Physics, University of California, Berkeley, CA 94720 (United States); Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720 (United States)], E-mail: lwmartin@lbl.gov

    2008-10-29

    Multiferroic materials, or materials that simultaneously possess two or more ferroic order parameters, have returned to the forefront of materials research. Driven by the desire to achieve new functionalities-such as electrical control of ferromagnetism at room temperature-researchers have undertaken a concerted effort to identify and understand the complexities of multiferroic materials. The ability to create high quality thin film multiferroics stands as one of the single most important landmarks in this flurry of research activity. In this review we discuss the basics of multiferroics including the important order parameters and magnetoelectric coupling in materials. We then discuss in detail the growth of single phase, horizontal multilayer, and vertical heterostructure multiferroics. The review ends with a look to the future and how multiferroics can be used to create new functionalities in materials.

  19. Multiferroics and magnetoelectrics: thin films and nanostructures

    Science.gov (United States)

    Martin, L. W.; Crane, S. P.; Chu, Y.-H.; Holcomb, M. B.; Gajek, M.; Huijben, M.; Yang, C.-H.; Balke, N.; Ramesh, R.

    2008-10-01

    Multiferroic materials, or materials that simultaneously possess two or more ferroic order parameters, have returned to the forefront of materials research. Driven by the desire to achieve new functionalities—such as electrical control of ferromagnetism at room temperature—researchers have undertaken a concerted effort to identify and understand the complexities of multiferroic materials. The ability to create high quality thin film multiferroics stands as one of the single most important landmarks in this flurry of research activity. In this review we discuss the basics of multiferroics including the important order parameters and magnetoelectric coupling in materials. We then discuss in detail the growth of single phase, horizontal multilayer, and vertical heterostructure multiferroics. The review ends with a look to the future and how multiferroics can be used to create new functionalities in materials.

  20. Multiferroics and magnetoelectrics: thin films and nanostructures

    International Nuclear Information System (INIS)

    Martin, L W; Crane, S P; Chu, Y-H; Holcomb, M B; Gajek, M; Huijben, M; Yang, C-H; Balke, N; Ramesh, R

    2008-01-01

    Multiferroic materials, or materials that simultaneously possess two or more ferroic order parameters, have returned to the forefront of materials research. Driven by the desire to achieve new functionalities-such as electrical control of ferromagnetism at room temperature-researchers have undertaken a concerted effort to identify and understand the complexities of multiferroic materials. The ability to create high quality thin film multiferroics stands as one of the single most important landmarks in this flurry of research activity. In this review we discuss the basics of multiferroics including the important order parameters and magnetoelectric coupling in materials. We then discuss in detail the growth of single phase, horizontal multilayer, and vertical heterostructure multiferroics. The review ends with a look to the future and how multiferroics can be used to create new functionalities in materials.

  1. Fluctuation conductivity of thin superconductive vanadium films

    International Nuclear Information System (INIS)

    Dmitrenko, I.M.; Sidorenko, A.S.; Fogel, N.Y.

    1982-01-01

    Resistive transitions into the superconductive state are studied in thin [d >T/sub c/ the experimental data on the excess conductivity of the films agree qualitatively and quantitively with Aslamazov--Larkin theory. There is no Maki--Thompson contribution to fluctuation conductivity. Near T/sub c/ the excess conductivity sigma' changes exponentially with temperature in accordance with the predictions of the theory of the critical fluctuations of the order parameter. The values of the effective charge carrier mass defined from data on sigma' for the low fluctuation and critical fluctuation regions differ markedly. This difference is within the spread of effective masses for various charge carrier groups already known for vanadium. Causes of the difference in resistive behavior for the regions T >T/sub c/ are considered

  2. The Characterization of Thin Film Nickel Titanium Shape Memory Alloys

    Science.gov (United States)

    Harris Odum, Nicole Latrice

    Shape memory alloys (SMA) are able to recover their original shape through the appropriate heat or stress exposure after enduring mechanical deformation at a low temperature. Numerous alloy systems have been discovered which produce this unique feature like TiNb, AgCd, NiAl, NiTi, and CuZnAl. Since their discovery, bulk scale SMAs have undergone extensive material property investigations and are employed in real world applications. However, its thin film counterparts have been modestly investigated and applied. Researchers have introduced numerous theoretical microelectromechanical system (MEMS) devices; yet, the research community's overall unfamiliarity with the thin film properties has delayed growth in this area. In addition, it has been difficult to outline efficient thin film processing techniques. In this dissertation, NiTi thin film processing and characterization techniques will be outlined and discussed. NiTi thin films---1 mum thick---were produced using sputter deposition techniques. Substrate bound thin films were deposited to analysis the surface using Scanning Electron Microscopy; the film composition was obtained using Energy Dispersive Spectroscopy; the phases were identified using X-ray diffraction; and the transformation temperatures acquired using resistivity testing. Microfabrication processing and sputter deposition were employed to develop tensile membranes for membrane deflection experimentation to gain insight on the mechanical properties of the thin films. The incorporation of these findings will aid in the movement of SMA microactuation devices from theory to fruition and greatly benefit industries such as medicinal and aeronautical.

  3. Thin Film Approaches to the SRF Cavity Problem Fabrication and Characterization of Superconducting Thin Films

    Energy Technology Data Exchange (ETDEWEB)

    Beringer, Douglas [College of William and Mary, Williamsburg, VA (United States)

    2017-08-01

    Superconducting Radio Frequency (SRF) cavities are responsible for the acceleration of charged particles to relativistic velocities in most modern linear accelerators, such as those employed at high-energy research facilities like Thomas Jefferson National Laboratory’s CEBAF and the LHC at CERN. Recognizing SRF as primarily a surface phenomenon enables the possibility of applying thin films to the interior surface of SRF cavities, opening a formidable tool chest of opportunities by combining and designing materials that offer greater performance benefit. Thus, while improvements in radio frequency cavity design and refinements in cavity processing techniques have improved accelerator performance and efficiency – 1.5 GHz bulk niobium SRF cavities have achieved accelerating gradients in excess of 35 MV/m – there exist fundamental material bounds in bulk superconductors limiting the maximally sustained accelerating field gradient (≈ 45 MV/m for Nb) where inevitable thermodynamic breakdown occurs. With state of the art Nb based cavity design fast approaching these theoretical limits, novel material innovations must be sought in order to realize next generation SRF cavities. One proposed method to improve SRF performance is to utilize thin film superconducting-insulating-superconducting (SIS) multilayer structures to effectively magnetically screen a bulk superconducting layer such that it can operate at higher field gradients before suffering critically detrimental SRF losses. This dissertation focuses on the production and characterization of thin film superconductors for such SIS layers for radio frequency applications. Correlated studies on structure, surface morphology and superconducting properties of epitaxial Nb and MgB2 thin films are presented.

  4. Fluorine doped vanadium dioxide thin films for smart windows

    International Nuclear Information System (INIS)

    Kiri, Pragna; Warwick, Michael E.A.; Ridley, Ian; Binions, Russell

    2011-01-01

    Thermochromic fluorine doped thin films of vanadium dioxide were deposited from the aerosol assisted chemical vapour deposition reaction of vanadyl acetylacetonate, ethanol and trifluoroacetic acid on glass substrates. The films were characterised with scanning electron microscopy, variable temperature Raman spectroscopy and variable temperature UV/Vis spectroscopy. The incorporation of fluorine in the films led to an increase in the visible transmittance of the films whilst retaining the thermochromic properties. This approach shows promise for improving the aesthetic properties of vanadium dioxide thin films.

  5. Sensing of volatile organic compounds by copper phthalocyanine thin films

    Science.gov (United States)

    Ridhi, R.; Saini, G. S. S.; Tripathi, S. K.

    2017-02-01

    Thin films of copper phthalocyanine have been deposited by thermal evaporation technique. We have subsequently exposed these films to the vapours of methanol, ethanol and propanol. Optical absorption, infrared spectra and electrical conductivities of these films before and after exposure to chemical vapours have been recorded in order to study their sensing mechanisms towards organic vapours. These films exhibit maximum sensing response to methanol while low sensitivities of the films towards ethanol and propanol have been observed. The changes in sensitivities have been correlated with presence of carbon groups in the chemical vapours. The effect of different types of electrodes on response-recovery times of the thin film with organic vapours has been studied and compared. The electrodes gap distance affects the sensitivity as well as response-recovery time values of the thin films.

  6. Glass transition and thermal expansivity of polystyrene thin films

    International Nuclear Information System (INIS)

    Inoue, R.; Kanaya, T.; Miyazaki, T.; Nishida, K.; Tsukushi, I.; Shibata, K.

    2006-01-01

    We have studied glass transition temperature and thermal expansivity of polystyrene thin films supported on silicon substrate using X-ray reflectivity and inelastic neutron scattering techniques. In annealing experiments, we have found that the reported apparent negative expansivity of polymer thin films is caused by unrelaxed structure due to insufficient annealing. Using well-annealed films, we have evaluated glass transition temperature T g and thermal expansivity as a function of film thickness. The glass transition temperature decreases with film thickness and is constant below about 10 nm, suggesting the surface glass transition temperature of 355 K, which is lower than that in bulk. We have also found that the thermal expansivity in the glassy state decreases with film thickness even after annealing. The decrease has been attributed to hardening of harmonic force constant arising from chain confinement in a thin film. This idea has been confirmed in the inelastic neutron scattering measurements

  7. Glass transition and thermal expansivity of polystyrene thin films

    Energy Technology Data Exchange (ETDEWEB)

    Inoue, R. [Institute for Chemical Research, Kyoto University, Uji, Kyoto-fu 611-0011 (Japan); Kanaya, T. [Institute for Chemical Research, Kyoto University, Uji, Kyoto-fu 611-0011 (Japan)]. E-mail: kanaya@scl.kyoto-u.ac.jp; Miyazaki, T. [Nitto Denko Corporation, 1-1-2 Shimohozumi, Ibaraki, Osaka-fu 567-8680 (Japan); Nishida, K. [Institute for Chemical Research, Kyoto University, Uji, Kyoto-fu 611-0011 (Japan); Tsukushi, I. [Chiba Institute of Technology, Narashino, Chiba-ken 275-0023 (Japan); Shibata, K. [Japan Atomic Energy Research Institute, Tokai, Ibaraki-ken 319-1195 (Japan)

    2006-12-20

    We have studied glass transition temperature and thermal expansivity of polystyrene thin films supported on silicon substrate using X-ray reflectivity and inelastic neutron scattering techniques. In annealing experiments, we have found that the reported apparent negative expansivity of polymer thin films is caused by unrelaxed structure due to insufficient annealing. Using well-annealed films, we have evaluated glass transition temperature T {sub g} and thermal expansivity as a function of film thickness. The glass transition temperature decreases with film thickness and is constant below about 10 nm, suggesting the surface glass transition temperature of 355 K, which is lower than that in bulk. We have also found that the thermal expansivity in the glassy state decreases with film thickness even after annealing. The decrease has been attributed to hardening of harmonic force constant arising from chain confinement in a thin film. This idea has been confirmed in the inelastic neutron scattering measurements.

  8. Thin film characterization by resonantly excited internal standing waves

    Energy Technology Data Exchange (ETDEWEB)

    Di Fonzio, S [SINCROTRONE TRIESTE, Trieste (Italy)

    1996-09-01

    This contribution describes how a standing wave excited in a thin film can be used for the characterization of the properties of the film. By means of grazing incidence X-ray reflectometry one can deduce the total film thickness. On the other hand in making use of a strong resonance effect in the electric field intensity distribution inside a thin film on a bulk substrate one can learn more about the internal structure of the film. The profile of the internal standing wave is proven by diffraction experiments. The most appropriate non-destructive technique for the subsequent thin film characterization is angularly dependent X-ray fluorescence analysis. The existence of the resonance makes it a powerful tool for the detection of impurities and of ultra-thin maker layers, for which the position can be determined with very high precision (about 1% of the total film thickness). This latter aspect will be discussed here on samples which had a thin Ti marker layer at different positions in a carbon film. Due to the resonance enhancement it was still possible to perform these experiments with a standard laboratory x-ray tube and with standard laboratory tool for marker or impurity detection in thin films.

  9. ZnO Thin Film Electronics for More than Displays

    Science.gov (United States)

    Ramirez, Jose Israel

    Zinc oxide thin film transistors (TFTs) are investigated in this work for large-area electronic applications outside of display technology. A constant pressure, constant flow, showerhead, plasma-enhanced atomic layer deposition (PEALD) process has been developed to fabricate high mobility TFTs and circuits on rigid and flexible substrates at 200 °C. ZnO films and resulting devices prepared by PEALD and pulsed laser deposition (PLD) have been compared. Both PEALD and PLD ZnO films result in densely packed, polycrystalline ZnO thin films that were used to make high performance devices. PEALD ZnO TFTs deposited at 300 °C have a field-effect mobility of ˜ 40 cm2/V-s (and > 20 cm2/V-S deposited at 200 °C). PLD ZnO TFTs, annealed at 400 °C, have a field-effect mobility of > 60 cm2/V-s (and up to 100 cm2/V-s). Devices, prepared by either technique, show high gamma-ray radiation tolerance of up to 100 Mrad(SiO2) with only a small radiation-induced threshold voltage shift (VT ˜ -1.5 V). Electrical biasing during irradiation showed no enhanced radiation-induced effects. The study of the radiation effects as a function of material stack thicknesses revealed the majority of the radiation-induced charge collection happens at the semiconductor-passivation interface. A simple sheet-charge model at that interface can describe the radiation-induced charge in ZnO TFTs. By taking advantage of the substrate-agnostic process provided by PEALD, due to its low-temperature and excellent conformal coatings, ZnO electronics were monolithically integrated with thin-film complex oxides. Application-based examples where ZnO electronics provide added functionality to complex oxide-based devices are presented. In particular, the integration of arrayed lead zirconate titanate (Pb(Zr, Ti)O3 or PZT) thin films with ZnO electronics for microelectromechanical systems (MEMs) and deformable mirrors is demonstrated. ZnO switches can provide voltage to PZT capacitors with fast charging and slow

  10. Silicon nanowires in polymer nanocomposites for photovoltaic hybrid thin films

    International Nuclear Information System (INIS)

    Ben Dkhil, S.; Bourguiga, R.; Davenas, J.; Cornu, D.

    2012-01-01

    Highlights: ► Hybrid solar cells based on blends of poly(N-vinylcarbazole) and silicon nanowires have been fabricated. ► We have investigated the charge transfer between PVK and SiNWs by the way of the quenching of the PVK photoluminescence. ► The relation between the morphology of the composite thin films and the charge transfer between SiNWs and PVK has been examined. ► We have investigated the effects of SiNWs concentration on the photovoltaic characteristics leading to the optimization of a critical SiNWs concentration. - Abstract: Hybrid thin films combining the high optical absorption of a semiconducting polymer film and the electronic properties of silicon fillers have been investigated in the perspective of the development of low cost solar cells. Bulk heterojunction photovoltaic materials based on blends of a semiconductor polymer poly(N-vinylcarbazole) (PVK) as electron donor and silicon nanowires (SiNWs) as electron acceptor have been studied. Composite PVK/SiNWs films were cast from a common solvent mixture. UV–visible spectrometry and photoluminescence of the composites have been studied as a function of the SiNWs concentration. Photoluminescence spectroscopy (PL) shows the existence of a critical SiNWs concentration of about 10 wt % for PL quenching corresponding to the most efficient charge pair separation. The photovoltaic (PV) effect has been studied under illumination. The optimum open-circuit voltage V oc and short-circuit current density J sc are obtained for 10 wt % SiNWs whereas a degradation of these parameters is observed at higher SiNWs concentrations. These results are correlated to the formation of aggregates in the composite leading to recombination of the photogenerated charge pairs competing with the dissociation mechanism.

  11. Thin Film Approaches to the SRF Cavity Problem: Fabrication and Characterization of Superconducting Thin Films

    Science.gov (United States)

    Beringer, Douglas B.

    Superconducting Radio Frequency (SRF) cavities are responsible for the acceleration of charged particles to relativistic velocities in most modern linear accelerators, such as those employed at high-energy research facilities like Thomas Jefferson National Laboratory's CEBAF and the LHC at CERN. Recognizing SRF as primarily a surface phenomenon enables the possibility of applying thin films to the interior surface of SRF cavities, opening a formidable tool chest of opportunities by combining and designing materials that offer greater benefit. Thus, while improvements in radio frequency cavity design and refinements in cavity processing techniques have improved accelerator performance and efficiency - 1.5 GHz bulk niobium SRF cavities have achieved accelerating gradients in excess of 35 MV/m - there exist fundamental material bounds in bulk superconductors limiting the maximally sustained accelerating field gradient (approximately 45 MV/m for Niobium) where inevitable thermodynamic breakdown occurs. With state of the art niobium based cavity design fast approaching these theoretical limits, novel material innovations must be sought in order to realize next generation SRF cavities. One proposed method to improve SRF performance is to utilize thin film superconducting-insulating-superconducting (SIS) multilayer structures to effectively magnetically screen a bulk superconducting layer such that it can operate at higher field gradients before suffering critically detrimental SRF losses. This dissertation focuses on the production and characterization of thin film superconductors for such SIS layers for radio-frequency applications.

  12. Inhomogeneous strain states in sputter deposited tungsten thin films

    International Nuclear Information System (INIS)

    Noyan, I.C.; Shaw, T.M.; Goldsmith, C.C.

    1997-01-01

    The results of an x-ray diffraction study of dc-magnetron sputtered tungsten thin films are reported. It is shown that the phase transformation from the β to α W can cause multilayered single-phase films where the layers have very different stress states even if the films are in the 500 nm thickness range. copyright 1997 American Institute of Physics

  13. Strain-induced properties of epitaxial VOx thin films

    NARCIS (Netherlands)

    Rata, AD; Hibma, T

    We have grown VOx thin films on different substrates in order to investigate the influence of epitaxial strain on the transport properties. We found that the electric conductivity is much larger for films grown under compressive strain on SrTiO3 substrates, as compared to bulk material and VOx films

  14. Electrical Conductivity of CUXS Thin Film Deposited by Chemical ...

    African Journals Online (AJOL)

    Thin films of CuxS have successfully been deposited on glass substrates using the Chemical Bath Deposition (CBD) technique. The films were then investigated for their electrical properties. The results showed that the electrical conductivities of the CuxS films with different molarities (n) of thiourea (Tu), determined using ...

  15. Comparison of the Thermal Degradation of Heavily Nb-Doped and Normal PZT Thin Films.

    Science.gov (United States)

    Yang, Jeong-Suong; Kang, YunSung; Kang, Inyoung; Lim, SeungMo; Shin, Seung-Joo; Lee, JungWon; Hur, Kang Heon

    2017-03-01

    The degradation of niobium-doped lead zirconate titanate (PZT) and two types of PZT thin films were investigated. Undoped PZT, two-step PZT, and heavily Nb-doped PZT (PNZT) around the morphotropic phase boundary were in situ deposited under optimum condition by RF-magnetron sputtering. All 2- [Formula: see text]-thick films had dense perovskite columnar grain structure and self-polarized (100) dominant orientation. PZT thin films were deposited on Pt/TiO x bottom electrode on Si wafer, and PNZT thin film was on Ir/TiW electrode with the help of orientation control. Sputtered PZT films formed on microelectromechanical system (MEMS) gyroscope and the degradation rates were compared at different temperatures. PNZT showed the best resistance to the thermal degradation, followed by two-step PZT. To clarify the effect of oxygen vacancies on the degradation of the film at high temperature, photoluminescence measurement was conducted, which confirmed that oxygen vacancy rate was the lowest in heavy PNZT. Nb-doping PZT thin films suppressed the oxygen deficit and made high imprint with self-polarization. This defect distribution and high internal field allowed PNZT thin film to make the piezoelectric sensors more stable and reliable at high temperature, such as reflow process of MEMS packaging.

  16. Photoinduced conductivity in tin dioxide thin films

    International Nuclear Information System (INIS)

    Muraoka, Y.; Takubo, N.; Hiroi, Z.

    2009-01-01

    The effects of ultraviolet light irradiation on the conducting properties of SnO 2-x thin films grown epitaxially on TiO 2 or Al 2 O 3 single-crystal substrates are studied at room temperature. A large increase in conductivity by two to four orders of magnitude is observed with light irradiation in an inert atmosphere and remains after the light is removed. The high-conducting state reverts to the original low-conducting state by exposing it to oxygen gas. These reversible phenomena are ascribed to the desorption and adsorption of negatively charged oxygen species at the grain boundaries, which critically change the mobility of electron carriers already present inside grains by changing the potential barrier height at the grain boundary. The UV light irradiation provides us with an easy and useful route to achieve a high-conducting state even at low carrier density in transparent conducting oxides and also to draw an invisible conducting wire or a specific pattern on an insulating film.

  17. Electrodeposition of thin Pd-Ag films

    International Nuclear Information System (INIS)

    Hasler, P.; Allmendinger, T.

    1993-01-01

    Thin Pd-Ag layers were electroplated preferably on brass and on nickel substrates using a two-compartment cell separated by an anion exchange membrane. The weakly alkaline electrolyte contained glycine-glycinate as the major complexing agents. The plating experiments were usually carried out without stirring, at different potentials and temperatures and in the absence or in the presence of sodium benzaldehyde-2,4-disulphonate (BDS). The samples were characterized by scanning electron microscopy and light microscopy. Their compositions were determined analytically by the inductively coupled plasma technique. In addition, the film porosity was tested. Electrodeposition in almost limiting current conditions for both components and without simultaneous hydrogen evolution led to deposits with compositions being in good agreement with the molar metal ratio in the electrolyte (77:23). The best results were achieved between 0 and -50 mV with respect to a reversible hydrogen electrode at 0 C in the presence of BDS. These deposits were bright, had good adherence and exhibited no pores at a film thickness of 1.2 μm. At too negative potentials, the deposits became black and powdery. (orig.)

  18. Co-sputtered ZnO:Si thin films as transparent conductive oxides

    Energy Technology Data Exchange (ETDEWEB)

    Faure, C. [CNRS, Univ. Bordeaux, ICMCB, UPR 9048, F33600 Pessac (France); Clatot, J. [LRCS, 33 Rue St Leu, F-80039 Amiens (France); Teule-Gay, L.; Campet, G. [CNRS, Univ. Bordeaux, ICMCB, UPR 9048, F33600 Pessac (France); Labrugere, C. [CeCaMA, Universite de Bordeaux, ICMCB, 87 avenue du Dr. A. Schweitzer, Pessac, F-33608 (France); Nistor, M. [National Institute for Lasers, Plasmas and Radiation Physics, L22, PO Box MG-36, 77125 Bucharest-Magurele (Romania); Rougier, A., E-mail: rougier@icmcb-bordeaux.cnrs.fr [CNRS, Univ. Bordeaux, ICMCB, UPR 9048, F33600 Pessac (France)

    2012-12-01

    Silicon doped Zinc Oxide thin films, so-called SZO, were deposited at room temperature on glass and plastic substrates by co-sputtering of ZnO and SiO{sub 2} targets. The influence of the SiO{sub 2} target power supply (from 30 to 75 W) on the SZO thin film composition and crystallinity is discussed. Si/Zn atomic ratio, determined by X-ray microprobe, increases from 1.2 to 8.2 at.%. For Si/Zn ratio equal and lower than 3.9%, SZO (S{sub 3.9}ZO) thin films exhibit the Wurzite structure with the (0 0 2) preferred orientation. Larger Si content leads to a decrease in crystallinity. With Si addition, the resistivity decreases down to 3.5 Multiplication-Sign 10{sup -3} Ohm-Sign {center_dot}cm for SZO thin film containing 3.9 at.% of Si prior to an increase. The mean transmittance of S{sub 3.9}ZO thin film on glass substrate approaches 80% (it is about 90% for the film itself) in the visible range (from 400 to 750 nm). Co-sputtered SZO thin films are suitable candidates for large area transparent conductive oxides. - Highlights: Black-Right-Pointing-Pointer Si doped ZnO thin films by co-sputtering of ZnO and SiO{sub 2} targets. Black-Right-Pointing-Pointer Minimum of resistivity for Si doped ZnO thin films containing 3.9% of Si. Black-Right-Pointing-Pointer Si and O environments by X-ray Photoelectron Spectroscopy.

  19. Magnesium Diboride thin Films, multilayers, and coatings for SRF cavities

    Energy Technology Data Exchange (ETDEWEB)

    Xi, Xiaoxing [Temple Univ., Philadelphia, PA (United States)

    2017-08-17

    Superconducting radio frequency (SRF) cavities currently use low-temperature superconductor niobium, and the Nb SRF cavities have approached the performance levels predicted theoretically. Compared to Nb, MgB2 becomes superconducting at a much higher temperature and promises a better RF performance in terms of higher quality factor Q and higher acceleration capability. An MgB2 SRF technology can significantly reduce the operating costs of particle accelerators when these potentials are realized. This project aimed to advance the development of an MgB2 SRF technology. It had two main objectives: (1) materials issues of MgB2 thin films and multilayers related to their applications in SRF cavities; and (2) coating single-cell cavities for testing at RF frequencies. The key technical thrust of the project is the deposition of high quality clean MgB2 films and coatings by the hybrid physical-chemical vapor deposition (HPCVD) technique, which was developed in my group. We have achieved technical progress in each of the two areas. For the first objective, we have confirmed that MgB2 thin film coatings can be used to effectively enhance the vortex penetration field of an SRF cavity. A vortex is a normal region in the shape of spaghetti that threads through a superconductor. Its existence is due to an applied magnetic field that is greater than a so-called lower critical field, Hc1. Once a vortex enters the superconductor, its movement leads to loss. This has been shown to be the reason for an SRF cavity to break down. Thus, enhancing the magnetic field for a vortex to enter the superconductor that forms the SRF cavity has be a goal of intense research. To this end, Gurevich proposed that a coating of thin superconductor layer can impede the vortex entrance. In this project, we have done two important experiment to test this concept. One, we showed that the enhancement of Hc1 can be

  20. Thermoelectric effects of amorphous Ga-Sn-O thin film

    Science.gov (United States)

    Matsuda, Tokiyoshi; Uenuma, Mutsunori; Kimura, Mutsumi

    2017-07-01

    The thermoelectric effects of an amorphous Ga-Sn-O (a-GTO) thin film have been evaluated as a physical parameter of a novel oxide semiconductor. Currently, a-GTO thin films are greatly desired not only because they do not contain rare metals and are therefore free from problems on the exhaustion of resources and the increase in cost but also because their initial characteristics and performance stabilities are excellent when they are used in thin-film transistors. In this study, an a-GTO thin film was deposited on a quartz substrate by RF magnetron sputtering and postannealing was performed in air at 350 °C for 1 h using an annealing furnace. The Seebeck coefficient and electrical conductivity of the a-GTO thin film were -137 µV/K and 31.8 S/cm at room temperature, and -183 µV/K and 43.8 S/cm at 397 K, respectively, and as a result, the power factor was 1.47 µW/(cm·K2) at 397 K; these values were roughly as high as those of amorphous In-Ga-Zn-O (a-IGZO) thin films. Therefore, a-GTO thin films will be a candidate material for thermoelectric devices fabricated in a large area at a low cost by controlling the carrier mobility, carrier density, device structures, and so forth.

  1. Relaxation in Thin Polymer Films Mapped across the Film Thickness by Astigmatic Single-Molecule Imaging

    KAUST Repository

    Oba, Tatsuya; Vacha, Martin

    2012-01-01

    We have studied relaxation processes in thin supported films of poly(methyl acrylate) at the temperature corresponding to 13 K above the glass transition by monitoring the reorientation of single perylenediimide molecules doped into the films

  2. Resistivity of thiol-modified gold thin films

    International Nuclear Information System (INIS)

    Correa-Puerta, Jonathan; Del Campo, Valeria; Henríquez, Ricardo; Häberle, Patricio

    2014-01-01

    In this work, we study the effect of thiol self assembled monolayers on the electrical resistivity of metallic thin films. The analysis is based on the Fuchs–Sondheimer–Lucas theory and on electrical transport measurements. We determined resistivity change due to dodecanethiol adsorption on gold thin films. For this purpose, we controlled the deposition and annealing temperatures of the films to change the surface topography and to diminish the effect of electron grain boundary scattering. Results show that the electrical response to the absorption of thiols strongly depends on the initial topography of the surface. - Highlights: • We study the effect of self assembled monolayers on the resistivity of thin films. • Fuchs–Sondheimer theory reproduces the resistivity increase due to thiol deposition. • We determined resistivity change due to dodecanethiol deposition on gold thin films. • The electrical response strongly depends on the substrate surface topography

  3. Electrochemical Deposition of Lanthanum Telluride Thin Films and Nanowires

    Science.gov (United States)

    Chi, Su (Ike); Farias, Stephen; Cammarata, Robert

    2013-03-01

    Tellurium alloys are characterized by their high performance thermoelectric properties and recent research has shown nanostructured tellurium alloys display even greater performance than bulk equivalents. Increased thermoelectric efficiency of nanostructured materials have led to significant interests in developing thin film and nanowire structures. Here, we report on the first successful electrodeposition of lanthanum telluride thin films and nanowires. The electrodeposition of lanthanum telluride thin films is performed in ionic liquids at room temperature. The synthesis of nanowires involves electrodepositing lanthanum telluride arrays into anodic aluminum oxide (AAO) nanoporous membranes. These novel procedures can serve as an alternative means of simple, inexpensive and laboratory-environment friendly methods to synthesize nanostructured thermoelectric materials. The thermoelectric properties of thin films and nanowires will be presented to compare to current state-of-the-art thermoelectric materials. The morphologies and chemical compositions of the deposited films and nanowires are characterized using SEM and EDAX analysis.

  4. Effect of solution concentration on MEH-PPV thin films

    Science.gov (United States)

    Affendi, I. H. H.; Sarah, M. S. P.; Alrokayan, Salman A. H.; Khan, Haseeb A.; Rusop, M.

    2018-05-01

    MEH-PPV thin films were prepared with a mixture of THF (tetrahydrofuran) solution deposited by spin coating method. The surface topology of MEH-PPV thin film were characterize by atomic force microscopy (AFM) and optical properties of absorption spectra were characterized by using Ultraviolet-visible-near-infrared (UV-Vis-NIR). The MEH-PPV concentration variation affects the surface and optical properties of the thin film where 0.5 mg/ml MEH-PPV concentration have a good surface topology provided the same film also gives the highest absorption coefficient were then deposited to a TiO2 thin film forming composite layer. The composite layer then shows low current flow of short circuit current of Isc = -5.313E-7 A.

  5. Resistivity of thiol-modified gold thin films

    Energy Technology Data Exchange (ETDEWEB)

    Correa-Puerta, Jonathan [Instituto de Física, Pontificia Universidad Católica de Valparaíso, Av. Universidad 330, Curauma, Valparaíso (Chile); Del Campo, Valeria [Departamento de Física, Universidad Técnica Federico Santa María, Av. España 1680, Valparaiso 2390123 (Chile); Henríquez, Ricardo, E-mail: ricardo.henriquez@usm.cl [Departamento de Física, Universidad Técnica Federico Santa María, Av. España 1680, Valparaiso 2390123 (Chile); Häberle, Patricio [Departamento de Física, Universidad Técnica Federico Santa María, Av. España 1680, Valparaiso 2390123 (Chile)

    2014-11-03

    In this work, we study the effect of thiol self assembled monolayers on the electrical resistivity of metallic thin films. The analysis is based on the Fuchs–Sondheimer–Lucas theory and on electrical transport measurements. We determined resistivity change due to dodecanethiol adsorption on gold thin films. For this purpose, we controlled the deposition and annealing temperatures of the films to change the surface topography and to diminish the effect of electron grain boundary scattering. Results show that the electrical response to the absorption of thiols strongly depends on the initial topography of the surface. - Highlights: • We study the effect of self assembled monolayers on the resistivity of thin films. • Fuchs–Sondheimer theory reproduces the resistivity increase due to thiol deposition. • We determined resistivity change due to dodecanethiol deposition on gold thin films. • The electrical response strongly depends on the substrate surface topography.

  6. Valence control of cobalt oxide thin films by annealing atmosphere

    International Nuclear Information System (INIS)

    Wang Shijing; Zhang Boping; Zhao Cuihua; Li Songjie; Zhang Meixia; Yan Liping

    2011-01-01

    The cobalt oxide (CoO and Co 3 O 4 ) thin films were successfully prepared using a spin-coating technique by a chemical solution method with CH 3 OCH 2 CH 2 OH and Co(NO 3 ) 2 .6H 2 O as starting materials. The grayish cobalt oxide films had uniform crystalline grains with less than 50 nm in diameter. The phase structure is able to tailor by controlling the annealing atmosphere and temperature, in which Co 3 O 4 thin film was obtained by annealing in air at 300-600, and N 2 at 300, and transferred to CoO thin film by raising annealing temperature in N 2 . The fitted X-ray photoelectron spectroscopy (XPS) spectra of the Co2p electrons are distinguishable from different valence states of cobalt oxide especially for their satellite structure. The valence control of cobalt oxide thin films by annealing atmosphere contributes to the tailored optical absorption property.

  7. Oxidation of ruthenium thin films using atomic oxygen

    Energy Technology Data Exchange (ETDEWEB)

    McCoy, A.P.; Bogan, J.; Brady, A.; Hughes, G.

    2015-12-31

    In this study, the use of atomic oxygen to oxidise ruthenium thin films is assessed. Atomic layer deposited (ALD) ruthenium thin films (~ 3 nm) were exposed to varying amounts of atomic oxygen and the results were compared to the impact of exposures to molecular oxygen. X-ray photoelectron spectroscopy studies reveal substantial oxidation of metallic ruthenium films to RuO{sub 2} at exposures as low as ~ 10{sup 2} L at 575 K when atomic oxygen was used. Higher exposures of molecular oxygen resulted in no metal oxidation highlighting the benefits of using atomic oxygen to form RuO{sub 2}. Additionally, the partial oxidation of these ruthenium films occurred at temperatures as low as 293 K (room temperature) in an atomic oxygen environment. - Highlights: • X-ray photoelectron spectroscopy study of the oxidation of Ru thin films • Oxidation of Ru thin films using atomic oxygen • Comparison between atomic oxygen and molecular oxygen treatments on Ru thin films • Fully oxidised RuO{sub 2} thin films formed with low exposures to atomic oxygen.

  8. Characterisation of thin films by phase modulated spectroscopic ellipsometry

    International Nuclear Information System (INIS)

    Bhattacharyya, D.; Das, N.C.

    1998-07-01

    A wide variety of thin film coatings, deposited by different techniques and with potential applications in various important areas, have been characterised by the Phase Modulated Spectroscopic Ellipsometer, installed recently in the Spectroscopy Division, B.A.R.C. The Phase Modulated technique provides a faster and more accurate data acquisition process than the conventional ellipsometry. The measured Ellipsometry spectra are fitted with theoretical spectra generated assuming an appropriate model regarding the sample. The fittings have been done objectively by minimising the squared difference (χ 2 ) between the measured and calculated values of the ellipsometric parameters and thus accurate information have been derived regarding the thickness and optical constants (viz, the refractive index and extinction coefficient) of the different layers, the surface roughness and the inhomogeneities present in the layers. Measurements have been done on (i) ion-implanted Si-wafers to investigate the formation of SiC layers, (ii) phenyl- silane coating on glass to investigate the surface modifications achieved for better adsorption of rhodamine dye on glass, (iii) GaN films on quartz to investigate the formation of high quality GaN layers by sputtering of GaAs targets, (iv) Diamond-like-coating (DLC) samples prepared by Chemical Vapour Deposition (CVD) to investigate the optical properties which would ultimately lead to an accurate estimation of the ratio of sp 3 and sp 2 bonded carbon atoms in the films and (v) SS 304 under different surface treatments to investigate the growth of different passive films. (author)

  9. Molecular simulation of freestanding amorphous nickel thin films

    Energy Technology Data Exchange (ETDEWEB)

    Dong, T.Q. [Université Paris-Est, Laboratoire Modélisation et Simulation Multi Echelle, UMR 8208 CNRS, 5 Boulevard Descartes, 77454 Marne-la-Vallée, Cedex 2 (France); Hoang, V.V., E-mail: vvhoang2002@yahoo.com [Department of Physics, Institute of Technology, National University of Ho Chi Minh City, 268 Ly Thuong Kiet Street, District 10, Ho Chi Minh City (Viet Nam); Lauriat, G. [Université Paris-Est, Laboratoire Modélisation et Simulation Multi Echelle, UMR 8208 CNRS, 5 Boulevard Descartes, 77454 Marne-la-Vallée, Cedex 2 (France)

    2013-10-31

    Size effects on glass formation in freestanding Ni thin films have been studied via molecular dynamics simulation with the n-body Gupta interatomic potential. Atomic mechanism of glass formation in the films is determined via analysis of the spatio-temporal arrangements of solid-like atoms occurred upon cooling from the melt. Solid-like atoms are detected via the Lindemann ratio. We find that solid-like atoms initiate and grow mainly in the interior of the film and grow outward. Their number increases with decreasing temperature and at a glass transition temperature they dominate in the system to form a relatively rigid glassy state of a thin film shape. We find the existence of a mobile surface layer in both liquid and glassy states which can play an important role in various surface properties of amorphous Ni thin films. We find that glass formation is size independent for models containing 4000 to 108,000 atoms. Moreover, structure of amorphous Ni thin films has been studied in details via coordination number, Honeycutt–Andersen analysis, and density profile which reveal that amorphous thin films exhibit two different parts: interior and surface layer. The former exhibits almost the same structure like that found for the bulk while the latter behaves a more porous structure containing a large amount of undercoordinated sites which are the origin of various surface behaviors of the amorphous Ni or Ni-based thin films found in practice. - Highlights: • Glass formation is analyzed via spatio-temporal arrangements of solid-like atoms. • Amorphous Ni thin film exhibits two different parts: surface and interior. • Mobile surface layer enhances various surface properties of the amorphous Ni thin films. • Undercoordinated sites play an important role in various surface activities.

  10. Multifunctional Parylene-C Microfibrous Thin Films

    Science.gov (United States)

    Chindam, Chandraprakash

    Towards sustainable development, multifunctional products have many advantageous over single-function products: reduction in number of parts, raw material, assembly time, and cost involved in a product's life cycle. My goal for this thesis was to demonstrate the multifunctionalities of Parylene-C microfibrous thin films. To achieve this goal, I chose Parylene C, a polymer, because the fabrication of periodic mediums of Parylene C in the form of microfibrous thin films (muFTFs) was already established. A muFTFs is a parallel arrangement of identical micrometer-sized fibers of shapes cylindrical, chevronic, or helical. Furthermore, Parylene C had three existing functions: in medical-device industries as corrosion-resistive coatings, in electronic industries as electrically insulating coatings, and in biomedical research for tissue-culture substrates. As the functionalities of a material are dependent on the microstructure and physical properties, the investigation made for this thesis was two-fold: (1) Experimentally, I determined the wetting, mechanical, and dielectric properties of columnar muFTFs and examined the microstructural and molecular differences between bulk films and muFTFs. (2) Using physical properties of bulk film, I computationally determined the elastodynamic and determined the electromagnetic filtering capabilities of Parylene-C muFTFs. Several columnar muFTFs of Parylene C were fabricated by varying the monomer deposition angle. Following are the significant experimental findings: 1. Molecular and microstructural characteristics: The dependence of the microfiber inclination angle on the monomer deposition angle was classified into four regimes of two different types. X-ray diffraction experiments indicated that the columnar muFTFs contain three crystal planes not evident in bulk Parylene-C films and that the columnar muFTFs are less crystalline than bulk films. Infrared absorbance spectra revealed that the atomic bonding is the same in all

  11. Transparent and conductive electrodes by large-scale nano-structuring of noble metal thin-films

    DEFF Research Database (Denmark)

    Linnet, Jes; Runge Walther, Anders; Wolff, Christian

    2018-01-01

    grid, and nano-wire thin-films. The indium and carbon films do not match the chemical stability nor the electrical performance of the noble metals, and many metal films are not uniform in material distribution leading to significant surface roughness and randomized transmission haze. We demonstrate...

  12. Cu2SixSn1-xS3 Thin Films Prepared by Reactive Magnetron Sputtering For Low-Cost Thin Film Solar Cells

    Science.gov (United States)

    Yan, Chang; Liu, Fang-Yang; Lai, Yan-Qing; Li, Jie; Liu, Ye-Xiang

    2011-10-01

    We report the preparation of Cu2SixSn1-xS3 thin films for thin film solar cell absorbers using the reactive magnetron co-sputtering technique. Energy dispersive spectrometer and x-ray diffraction analyses indicate that Cu2Si1-xSnxS3 thin films can be synthesized successfully by partly substituting Si atoms for Sn atoms in the Cu2SnS3 lattice, leading to a shrinkage of the lattice, and, accordingly, by 2θ shifting to larger values. The blue shift of the Raman peak further confirms the formation of Cu2SixSn1-xS3. Environmental scanning electron microscope analyses reveal a polycrystalline and homogeneous morphology with a grain size of about 200-300 nm. Optical measurements indicate an optical absorption coefficient of higher than 104 cm-1 and an optical bandgap of 1.17±0.01 eV.

  13. Development of neutron diffuse scattering analysis code by thin film and multilayer film

    International Nuclear Information System (INIS)

    Soyama, Kazuhiko

    2004-01-01

    To research surface structure of thin film and multilayer film by neutron, a neutron diffuse scattering analysis code using DWBA (Distorted-Wave Bron Approximation) principle was developed. Subjects using this code contain the surface and interface properties of solid/solid, solid/liquid, liquid/liquid and gas/liquid, and metal, magnetism and polymer thin film and biomembran. The roughness of surface and interface of substance shows fractal self-similarity and its analytical model is based on DWBA theory by Sinha. The surface and interface properties by diffuse scattering are investigated on the basis of the theoretical model. The calculation values are proved to be agreed with the experimental values. On neutron diffuse scattering by thin film, roughness of surface of thin film, correlation function, neutron propagation by thin film, diffuse scattering by DWBA theory, measurement model, SDIFFF (neutron diffuse scattering analysis program by thin film) and simulation results are explained. On neutron diffuse scattering by multilayer film, roughness of multilayer film, principle of diffuse scattering, measurement method and simulation examples by MDIFF (neutron diffuse scattering analysis program by multilayer film) are explained. (S.Y.)To research surface structure of thin film and multilayer film by neutron, a neutron diffuse scattering analysis code using DWBA (Distorted-Wave Bron Approximation) principle was developed. Subjects using this code contain the surface and interface properties of solid/solid, solid/liquid, liquid/liquid and gas/liquid, and metal, magnetism and polymer thin film and biomembran. The roughness of surface and interface of substance shows fractal self-similarity and its analytical model is based on DWBA theory by Sinha. The surface and interface properties by diffuse scattering are investigated on the basis of the theoretical model. The calculation values are proved to be agreed with the experimental values. On neutron diffuse scattering

  14. Buckling of Thin Films in Nano-Scale

    Directory of Open Access Journals (Sweden)

    Li L.A.

    2010-06-01

    Full Text Available Investigation of thin film buckling is important for life prediction of MEMS device which are damaged mainly by the delamination and buckling of thin films. In this paper the mechanical and thermal properties of compressed thin film titanium films with 150 nm thickness deposited on an organic glass substrate under mechanical and thermal loads were measured and characterized. In order to simulate the thin films which subjected to compound loads and the buckle modes the external uniaxial compression and thermal loading were subjected to the specimen by the symmetric loading device and the electrical film in this experiment. The temperature of the thin film deposited on substrate was measured using thermoelectric couple. The range of temperature accords with the temperature range of the MEMS. It is found that the size and number of the delamination and buckling of the film are depended upon the pre-fixed mechanical loading and thermal temperature. The thermal transient conduction and thermal stability of the film and substrate was studied with finite element method.

  15. Stability of tetraphenyl butadiene thin films in liquid xenon

    International Nuclear Information System (INIS)

    Sanguino, P.; Balau, F.; Botelho do Rego, A.M.; Pereira, A.; Chepel, V.

    2016-01-01

    Tetraphenyl butadiene (TPB) is widely used in particle detectors as a wavelength shifter. In this work we studied the stability of TPB thin films when immersed in liquid xenon (LXe). The thin films were deposited on glass and quartz substrates by thermal evaporation. Morphological and chemical surface properties were monitored before and after immersion into LXe by scanning electron microscopy and X-ray photoelectron spectroscopy. No appreciable changes have been detected with these two methods. Grain size and surface chemical composition were found to be identical before and after submersion into LXe. However, the film thickness, measured via optical transmission in the ultraviolet–visible wavelength regions, decreased by 1.6 μg/cm 2 (24%) after immersion in LXe during 20 h. These results suggest the necessity of using a protective thin film over the Tetraphenyl butadiene when used as a wavelength shifter in LXe particle detectors. - Highlights: • Stability of tetraphenyl butadiene (TPB) thin films immersed in liquid xenon (LXe). • Thermally evaporated TPB thin films were immersed in LXe for 20 h. • Film morphology and chemical surface properties remained unchanged. • Surface density of the films decreased by 1.6 μg/cm 2 (24%) after immersion in LXe. • For using in LXe particle detectors, TPB films should be protected with a coating.

  16. Modification of thin film properties by ion bombardment during deposition

    International Nuclear Information System (INIS)

    Harper, J.M.E.; Cuomo, J.J.; Gambino, R.J.; Kaufman, H.R.

    1984-01-01

    Many thin film deposition techniques involve some form of energetic particle bombardment of the growing film. The degree of bombardment greatly influences the film composition, structure and other properties. While in some techniques the degree of bombardment is secondary to the original process design, in recent years more deposition systems are being designed with the capability for controlled ion bombardment of thin films during deposition. The highest degree of control is obtained with ion beam sources which operate independently of the vapor source providing the thin film material. Other plasma techniques offer varying degrees of control of energetic particle bombardment. Deposition methods involving ion bombardment are described, and the basic processes with which film properties are modified by ion bombardment are summarized. (Auth.)

  17. Electrochromic properties of nanocrystalline MoO3 thin films

    International Nuclear Information System (INIS)

    Hsu, C.-S.; Chan, C.-C.; Huang, H.-T.; Peng, C.-H.; Hsu, W.-C.

    2008-01-01

    Electrochromic MoO 3 thin films were prepared by a sol-gel spin-coating technique. The spin-coated films were initially amorphous; they were calcined, producing nanocrystalline MoO 3 thin films. The effects of annealing temperatures ranging from 100 o C to 500 o C were investigated. The electrochemical and electrochromic properties of the films were measured by cyclic voltammetry and by in-situ optical transmittance techniques in 1 M LiClO 4 /propylene carbonate electrolyte. Experimental results showed that the transmittance of MoO 3 thin films heat-treated at 350 o C varied from 80% to 35% at λ = 550 nm (ΔT = ∼ 45%) and from 86% to 21% at λ ≥ 700 nm (ΔT = ∼ 65%) after coloration. Films heat-treated at 350 deg. C exhibited the best electrochromic properties in the present study

  18. Residual stress in spin-cast polyurethane thin films

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Hong; Zhang, Li, E-mail: lizhang@mae.cuhk.edu.hk [Department of Mechanical and Automation Engineering, The Chinese University of Hong Kong, Shatin N.T., Hong Kong (China); Chow Yuk Ho Technology Centre for Innovative Medicine, The Chinese University of Hong Kong, Shatin N.T., Hong Kong (China)

    2015-01-19

    Residual stress is inevitable during spin-casting. Herein, we report a straightforward method to evaluate the residual stress in as-cast polyurethane thin films using area shrinkage measurement of films in floating state, which shows that the residual stress is independent of radial location on the substrate and decreased with decreasing film thickness below a critical value. We demonstrate that the residual stress is developed due to the solvent evaporation after vitrification during spin-casting and the polymer chains in thin films may undergo vitrification at an increased concentration. The buildup of residual stress in spin-cast polymer films provides an insight into the size effects on the nature of polymer thin films.

  19. Copper zinc tin sulfide-based thin film solar cells

    CERN Document Server

    Ito, Kentaro

    2014-01-01

    Beginning with an overview and historical background of Copper Zinc Tin Sulphide (CZTS) technology, subsequent chapters cover properties of CZTS thin films, different preparation methods of CZTS thin films, a comparative study of CZTS and CIGS solar cell, computational approach, and future applications of CZTS thin film solar modules to both ground-mount and rooftop installation. The semiconducting compound (CZTS) is made up earth-abundant, low-cost and non-toxic elements, which make it an ideal candidate to replace Cu(In,Ga)Se2 (CIGS) and CdTe solar cells which face material scarcity and tox

  20. Optical modeling and simulation of thin-film photovoltaic devices

    CERN Document Server

    Krc, Janez

    2013-01-01

    In wafer-based and thin-film photovoltaic (PV) devices, the management of light is a crucial aspect of optimization since trapping sunlight in active parts of PV devices is essential for efficient energy conversions. Optical modeling and simulation enable efficient analysis and optimization of the optical situation in optoelectronic and PV devices. Optical Modeling and Simulation of Thin-Film Photovoltaic Devices provides readers with a thorough guide to performing optical modeling and simulations of thin-film solar cells and PV modules. It offers insight on examples of existing optical models

  1. The state of the art of thin-film photovoltaics

    International Nuclear Information System (INIS)

    Surek, T.

    1993-10-01

    Thin-film photovoltaic technologies, based on materials such as amorphous or polycrystalline silicon, copper indium diselenide, cadmium telluride, and gallium arsenide, offer the potential for significantly reducing the cost of electricity generated by photovoltaics. The significant progress in the technologies, from the laboratory to the marketplace, is reviewed. The common concerns and questions raised about thin films are addressed. Based on the progress to date and the potential of these technologies, along with continuing investments by the private sector to commercialize the technologies, one can conclude that thin-film PV will provide a competitive alternative for large-scale power generation in the future

  2. Thin film circuits for future applications. Pt. 2. Evaporation technique

    Energy Technology Data Exchange (ETDEWEB)

    Haug, G; Houska, K H; Schmidt, H J; Sprengel, H P; Wohak, K

    1976-06-01

    Investigations of thin film diffusion processes and reactions with encapsulation materials resulted in improved long term stability of evaporated NiCr resistors, SiO capacitors and NiCr/Au conductors for thin film circuits. Stable NiCr resistor networks can be formed on ceramic substrates, and SiO capacitors of good quality can be deposited on the new very smooth ceramic substrates. The knowledge of the influence of evaporation parameters make the production of SiO capacitors with definite properties and good reproducibility possible. The range of capacitance of tantalum thin film circuits can be extended by integration with evaporated SiO capacitors.

  3. XRay Study of Transfer Printed Pentacene Thin Films

    International Nuclear Information System (INIS)

    Shao, Y.; Solin, S. A.; Hines, D. R.; Williams, E. D.

    2007-01-01

    We investigated the structural properties and transfer properties of pentacene thin films fabricated by thermal deposition and transfer printing onto SiO2 and plastic substrates, respectively. The dependence of the crystallite size on the printing time, temperature and pressure were measured. The increases of crystalline size were observed when pentacene thin films were printed under specific conditions, e.g. 120 deg. C and 600 psi and can be correlated with the improvement of the field effect mobility of pentacene thin-film transistors

  4. Optical properties of CeO 2 thin films

    Indian Academy of Sciences (India)

    Cerium oxide (CeO2) thin films have been prepared by electron beam evaporation technique onto glass substrate at a pressure of about 6 × 10-6 Torr. The thickness of CeO2 films ranges from 140–180 nm. The optical properties of cerium oxide films are studied in the wavelength range of 200–850 nm. The film is highly ...

  5. Principles of electron backscattering by solids and thin films

    International Nuclear Information System (INIS)

    Niedrig, H.

    1977-01-01

    The parameters concerning the electron backscattering from thin films and solids (atomic scattering cross-section, atomic number, single/multiple scattering, film thickness of self-supporting films and of surface films on bulk substrates, scattering angular distribution, angle of incidence, diffraction effects) are described. Their influence on some important contrast mechanisms in scanning electron microscopy (thickness contrast, Z/material contrast, tilting/topography contrast, orientation contrast) is discussed. The main backscattering electron detection systems are briefly described. (orig.) [de

  6. Monitoring the thinning dynamics of soap films by phase shift interferometry. The case of perfluoropolyether surfactants.

    Science.gov (United States)

    Gambi, Cecilia M C; Vannoni, Maurizio; Sordini, Andrea; Molesini, Giuseppe

    2014-02-01

    An interferometric method to monitor the thinning process of vertical soap films from a water solution of surfactant materials is reported. Raw data maps of optical path difference introduced by the film are obtained by conventional phase shift interferometry. Off-line re-processing of such raw data taking into account the layered structure of soap films leads to an accurate measurement of the geometrical thickness. As an example of data acquisition and processing, the measuring chain is demonstrated on perfluoropolyether surfactants; the section profile of vertical films is monitored from drawing to black film state, and quantitative data on the dynamics of the thinning process are presented. The interferometric method proves effective to the task, and lends itself to further investigate the physical properties of soap films.

  7. Chalcogenide phase-change thin films used as grayscale photolithography materials.

    Science.gov (United States)

    Wang, Rui; Wei, Jingsong; Fan, Yongtao

    2014-03-10

    Chalcogenide phase-change thin films are used in many fields, such as optical information storage and solid-state memory. In this work, we present another application of chalcogenide phase-change thin films, i.e., as grayscale photolithgraphy materials. The grayscale patterns can be directly inscribed on the chalcogenide phase-change thin films by a single process through direct laser writing method. In grayscale photolithography, the laser pulse can induce the formation of bump structure, and the bump height and size can be precisely controlled by changing laser energy. Bumps with different height and size present different optical reflection and transmission spectra, leading to the different gray levels. For example, the continuous-tone grayscale images of lifelike bird and cat are successfully inscribed onto Sb(2)Te(3) chalcogenide phase-change thin films using a home-built laser direct writer, where the expression and appearance of the lifelike bird and cat are fully presented. This work provides a way to fabricate complicated grayscale patterns using laser-induced bump structures onto chalcogenide phase-change thin films, different from current techniques such as photolithography, electron beam lithography, and focused ion beam lithography. The ability to form grayscale patterns of chalcogenide phase-change thin films reveals many potential applications in high-resolution optical images for micro/nano image storage, microartworks, and grayscale photomasks.

  8. Swift heavy ion induced modifications in optical and electrical properties of cadmium selenide thin films

    Science.gov (United States)

    Choudhary, Ritika; Chauhan, Rishi Pal

    2017-07-01

    The modification in various properties of thin films using high energetic ion beam is an exciting area of basic and applied research in semiconductors. In the present investigations, cadmium selenide (CdSe) thin films were deposited on ITO substrate using electrodeposition technique. To study the swift heavy ion (SHI) induced effects, the deposited thin films were irradiated with 120 MeV heavy Ag9+ ions using pelletron accelerator facility at IUAC, New Delhi, India. Structural phase transformation in CdSe thin film from metastable cubic phase to stable hexagonal phase was observed after irradiation leading to decrease in the band gap from 2.47 eV to 2.12 eV. The phase transformation was analyzed through X-ray diffraction patterns. During SHI irradiation, Generation of high temperature and pressure by thermal spike along the trajectory of incident ions in the thin films might be responsible for modification in the properties of thin films.[Figure not available: see fulltext.

  9. Dewetting of thin polymer film on rough substrate: II. Experiment

    International Nuclear Information System (INIS)

    Volodin, Pylyp; Kondyurin, Alexey

    2008-01-01

    The theory of the dewetting process developed for a model of substrate-film interaction forces was examined by an experimental investigation of the dewetting process of thin polystyrene (PS) films on chemically etched silicon substrates. In the dependence on PS films thickness and silicon roughness, various situations of dewetting were observed as follows: (i) if the wavelength of the substrate roughness is much larger than the critical spinodal wavelength of a film, then spinodal dewetting of the film is observed; (ii) if the wavelength of the substrate roughness is smaller than the critical wavelength of the film and the substrate roughness is larger in comparison with film thickness, then the dewetting due to substrate roughness is observed and the dewetted film patterns repeat the rough substrate structure; (iii) if the wavelength of the substrate roughness is smaller than the critical wavelength of the film and the substrate roughness is small in comparison with the film thickness, then spinodal dewetting proceeds

  10. Modulation of magnetic coercivity in Ni thin films by reversible control of strain

    Energy Technology Data Exchange (ETDEWEB)

    Lin, Wen-Chin, E-mail: wclin@ntnu.edu.tw [Department of Physics, National Taiwan Normal University, Taipei 116, Taiwan (China); Huang, Chia-Wei; Ting, Yi-Chieh; Lo, Fang-Yuh [Department of Physics, National Taiwan Normal University, Taipei 116, Taiwan (China); Chern, Ming-Yau [Department of Physics, National Taiwan University, Taipei 106, Taiwan (China)

    2015-05-01

    In this study, we demonstrated the magnetoelectric control of magnetic thin films. (111)-textured Pd/Ni/Pd thin films were prepared on mica/lead zirconium titanate (PZT) substrates for the investigation. The reversible modulation of magnetic coercivity in Ni films was observed through the electric-voltage-controlled strain variation from the PZT substrate. For 14 nm Ni film, the applied electric field of ±350 V/m led to ±0.5% strain variation of PZT, which was transferred to ±0.4% strain variation of Pd/Ni/Pd thin films on mica, and resulted in ∓17 Oe (∓5% of the preliminary magnetic coercivity). The reversible modulation of magnetic coercivity is supposed to be caused by the voltage-controlled strain through the magneto-elastic effect. - Highlights: • The magnetoelectric control of the magnetic coercivity of Pd/Ni/Pd thin films was demonstrated. • The ±0.4% strain variation of 14 nm Ni thin films resulted in ±17 Oe change of H{sub c}. • The reversible modulation of H{sub c} is supposed to be caused by the magneto-elastic effect.

  11. Structural and biocompatible characterization of TiC/a:C nanocomposite thin films

    International Nuclear Information System (INIS)

    Balázsi, K.; Vandrovcová, M.; Bačáková, L.; Balázsi, Cs.

    2013-01-01

    In this work, sputtered TiC/amorphous C thin films have been developed in order to be applied as potential barrier coating for interfering of Ti ions from pure Ti or Ti alloy implants. Our experiments were based on magnetron sputtering method, because the vacuum deposition provides great flexibility for manipulating material chemistry and structure, leading to films and coatings with special properties. The films have been deposited on silicon (001) substrates with 300 nm thick oxidized silicon sublayer at 200 °C deposition temperature as model substrate. Transmission electron microscopy has been used for structural investigations. Thin films consisted of ∼ 20 nm TiC columnar crystals embedded by 5 nm thin amorphous carbon matrix. MG63 osteoblast cells have been applied for in vitro study of TiC nanocomposites. The cell culture tests give strong evidence of thin films biocompatibility. Highlights: ► The main goal of this work is the relatively easy preparation of nanocomposite TiC thin films by dc magnetron sputtering. ► TEM and HREM were applied for structural characterization of columnar TiC nanocrystals and amorphous carbon matrix. ► The biocompatibility of films was showed by MG63 human osteoblast like cells during 1, 3 and 7 days seeding

  12. Electrical resistivity of thin metal films and multilayers

    International Nuclear Information System (INIS)

    Fenn, M.

    1999-01-01

    The electrical resistivity and temperature coefficient of resistivity (TCR) of thin films and multilayers of Cu, Nb and Zr have been measured over a wide range of layer thicknesses. The structure of the films has been characterised using transmission electron microscopy (TEM) and x-ray reflectivity. The experimental results have been compared with the semiclassical theory due to Dimmich. The values of the grain boundary reflectivity, R, in the single films has been found to be approximately 0.35 for Cu in agreement with the literature. The value of R for Nb and Zr has been found to vary with grain size, although it is approximately 0.55 for Nb and 0.925 for Zr over a wide range of grain sizes, and this is believed to be presented for the first time. The value of the interfacial specularity parameter, p, is not found to have a significant effect compared to R in the single films. Dimmich's theoretical expression for the TCR does not match experiment, but by adapting the resistivity expression of the theory to different temperatures a satisfactory fit has been obtained. It has been concluded that the assumption of the free electron model in the presence of grain boundary scattering is in error. The adapted theory predicts negative TCR in sufficiently thin films with experimentally plausible values of the input parameters, and this is believed to be demonstrated for the first time. The experimental resistivity of the multilayers was much lower than expected from the resistivity of the single films. A theoretical fit to the experimental resistivity and TCR of the multilayers was obtained by adjusting the parameter values obtained from single films, and the value of p was found to be significant. This procedure leads to a contradiction in the value of R for Nb. With a view to extending the above work to magnetic multilayers, an AC susceptometer has been designed, built and tested. The results indicate that this instrument would be suitable for work on magnetic

  13. Instability and dynamics of volatile thin films

    Science.gov (United States)

    Ji, Hangjie; Witelski, Thomas P.

    2018-02-01

    Volatile viscous fluids on partially wetting solid substrates can exhibit interesting interfacial instabilities and pattern formation. We study the dynamics of vapor condensation and fluid evaporation governed by a one-sided model in a low-Reynolds-number lubrication approximation incorporating surface tension, intermolecular effects, and evaporative fluxes. Parameter ranges for evaporation-dominated and condensation-dominated regimes and a critical case are identified. Interfacial instabilities driven by the competition between the disjoining pressure and evaporative effects are studied via linear stability analysis. Transient pattern formation in nearly flat evolving films in the critical case is investigated. In the weak evaporation limit unstable modes of finite-amplitude nonuniform steady states lead to rich droplet dynamics, including flattening, symmetry breaking, and droplet merging. Numerical simulations show that long-time behaviors leading to evaporation or condensation are sensitive to transitions between filmwise and dropwise dynamics.

  14. Ideal glass transitions in thin films: An energy landscape perspective

    Science.gov (United States)

    Truskett, Thomas M.; Ganesan, Venkat

    2003-07-01

    We introduce a mean-field model for the potential energy landscape of a thin fluid film confined between parallel substrates. The model predicts how the number of accessible basins on the energy landscape and, consequently, the film's ideal glass transition temperature depend on bulk pressure, film thickness, and the strength of the fluid-fluid and fluid-substrate interactions. The predictions are in qualitative agreement with the experimental trends for the kinetic glass transition temperature of thin films, suggesting the utility of landscape-based approaches for studying the behavior of confined fluids.

  15. Strain Relaxation and Vacancy Creation in Thin Platinum Films

    International Nuclear Information System (INIS)

    Gruber, W.; Chakravarty, S.; Schmidt, H.; Baehtz, C.; Leitenberger, W.; Bruns, M.; Kobler, A.; Kuebel, C.

    2011-01-01

    Synchrotron based combined in situ x-ray diffractometry and reflectometry is used to investigate the role of vacancies for the relaxation of residual stress in thin metallic Pt films. From the experimentally determined relative changes of the lattice parameter a and of the film thickness L the modification of vacancy concentration and residual strain was derived as a function of annealing time at 130 deg. C. The results indicate that relaxation of strain resulting from compressive stress is accompanied by the creation of vacancies at the free film surface. This proves experimentally the postulated dominant role of vacancies for stress relaxation in thin metal films close to room temperature.

  16. Soft Magnetic Multilayered Thin Films for HF Applications

    Science.gov (United States)

    Loizos, George; Giannopoulos, George; Serletis, Christos; Maity, Tuhin; Roy, Saibal; Lupu, Nicoleta; Kijima, Hanae; Yamaguchi, Masahiro; Niarchos, Dimitris

    Multilayered thin films from various soft magnetic materials were successfully prepared by magnetron sputtering in Ar atmosphere. The magnetic properties and microstructure were investigated. It is found that the films show good soft magnetic properties: magnetic coercivity of 1-10 Oe and saturation magnetization higher than 1T. The initial permeability of the films is greater than 300 and flattens up to 600 MHz. The multilayer thin film properties in combination with their easy, fast and reproducible fabrication indicate that they are potential candidates for high frequency applications.

  17. Microwave Josephson generation in thin film superconducting bridges

    International Nuclear Information System (INIS)

    Gubankov, V.N.; Koshelets, V.P.; Ovsyannikov, G.A.

    1975-01-01

    Thin-film bridges have some advantage over other types of superconducting weak links: good definition of electromagnetic parameters and of weak region geometry. Up to now Josephson properties of bridges have been investigated by using indirect methods (the effect of magnetic field on the critical current I 0 , the bridge behavior in a microwave field, etc.). Direct experimental observation of Josephson radiation from autonomous thin film bridges is reported. Microwave radiation in tin bridges of 'variable' thickness has been investigated where the thickness of the film forming the bridge is far less than the thickness of the bank films. (Auth.)

  18. Photoinduced hydrophobic surface of graphene oxide thin films

    International Nuclear Information System (INIS)

    Zhang Xiaoyan; Song Peng; Cui Xiaoli

    2012-01-01

    Graphene oxide (GO) thin films were deposited on transparent conducting oxide substrates and glass slides by spin coating method at room temperature. The wettability of GO thin films before and after ultraviolet (UV) irradiation was characterized with water contact angles, which increased from 27.3° to 57.6° after 3 h of irradiation, indicating a photo-induced hydrophobic surface. The UV–vis absorption spectra, Raman spectroscopy, X-ray photoelectron spectroscopy, and conductivity measurements of GO films before and after UV irradiation were taken to study the mechanism of photoinduced hydrophobic surface of GO thin films. It is demonstrated that the photoinduced hydrophobic surface is ascribed to the elimination of oxygen-containing functional groups on GO molecules. This work provides a simple strategy to control the wettability properties of GO thin films by UV irradiation. - Highlights: ► Photoinduced hydrophobic surface of graphene oxide thin films has been demonstrated. ► Elimination of oxygen-containing functional groups in graphene oxide achieved by UV irradiation. ► We provide novel strategy to control surface wettability of GO thin films by UV irradiation.

  19. Tools to synthesize the learning of thin films

    International Nuclear Information System (INIS)

    Rojas, Roberto; Fuster, Gonzalo; Sluesarenko, Viktor

    2011-01-01

    After a review of textbooks written for undergraduate courses in physics, we have found that discussions on thin films are mostly incomplete. They consider the reflected and not the transmitted light for two instead of the four types of thin films. In this work, we complement the discussion in elementary textbooks, by analysing the phase differences required to match the conditions for constructive and destructive interference, in the reflected and transmitted light in four types of thin films. We consider thin films with varied sequences in the refractive index, which we identify as barriers, wells and stairs (up and down). Also, we use the conservation of energy in order to understand the complementary colour fringes observed in the reflected and transmitted light through thin films. We analyse systematically the phase changes by introducing a phase table and we synthesize the results in a circular diagram matching 16 physical situations of interference and their corresponding conditions on the film thickness. The phase table and the circular diagram are a pair of tools easily assimilated by students, and useful to organize, analyse and activate the knowledge about thin films.

  20. Thin Films for X-ray Optics

    Science.gov (United States)

    Conley, Raymond

    Focusing x-rays with refraction requires an entire array of lens instead of a single element, each contributing a minute amount of focusing to the system. In contrast to their visible light counterparts, diffractive optics require a certain depth along the optical axis in order to provide sufficient phase shift. Mirrors reflect only at very shallow angles. In order to increase the angle of incidence, contribution from constructive interference within many layers needs to be collected. This requires a multilayer coating. Thin films have become a central ingredient for many x-ray optics due to the ease of which material composition and thickness can be controlled. Chapter 1 starts with a short introduction and survey of the field of x-ray optics. This begins with an explanation of reflective multilayers. Focusing optics are presented next, including mirrors, zone plates, refractive lenses, and multilayer Laue lens (MLL). The strengths and weaknesses of each "species" of optic are briefly discussed, alongside fabrication issues and the ultimate performance for each. Practical considerations on the use of thin-films for x-ray optics fabrication span a wide array of topics including material systems selection and instrumentation design. Sputter deposition is utilized exclusively for the work included herein because this method of thin-film deposition allows a wide array of deposition parameters to be controlled. This chapter also includes a short description of two deposition systems I have designed. Chapter 2 covers a small sampling of some of my work on reflective multilayers, and outlines two of the deposition systems I have designed and built at the Advanced Photon Source. A three-stripe double multilayer monochromator is presented as a case study in order to detail specifications, fabrication, and performance of this prolific breed of x-ray optics. The APS Rotary Deposition System was the first deposition system in the world designed specifically for multilayer

  1. Thermionic vacuum arc (TVA) technique for magnesium thin film deposition

    Energy Technology Data Exchange (ETDEWEB)

    Balbag, M.Z., E-mail: zbalbag@ogu.edu.t [Eskisehir Osmangazi University, Education Faculty, Primary Education, Meselik Campus, Eskisehir 26480 (Turkey); Pat, S.; Ozkan, M.; Ekem, N. [Eskisehir Osmangazi University, Art and Science Faculty, Physics Department, Eskisehir 26480 (Turkey); Musa, G. [Ovidius University, Physics Department, Constanta (Romania)

    2010-08-15

    In this study, magnesium thin films were deposited on glass substrate by the Thermionic Vacuum Arc (TVA) technique for the first time. We present a different technique for deposition of high-quality magnesium thin films. By means of this technique, the production of films is achieved by condensing the plasma of anode material generated using Thermionic Vacuum Arc (TVA) under high vacuum conditions onto the surface to be coated. The crystal orientation and morphology of the deposited films were investigated by using XRD, EDX, SEM and AFM. The aim of this study is to search the use of TVA technique to coat magnesium thin films and to determine some of the physical properties of the films generated. Furthermore, this study will contribute to the scientific studies which search the thin films of magnesium or the compounds containing magnesium. In future, this study will be preliminary work to entirely produce magnesium diboride (MgB{sub 2}) superconductor thin film with the TVA technique.

  2. Thickness-dependent radiative properties of Y-Ba-Cu-O thin films

    International Nuclear Information System (INIS)

    Phelan, P.E.; Chen, G.; Tien, C.L.

    1991-01-01

    Some applications of high-temperature superconductors where their thermal radiative behavior is important, such as bolometers, optically-triggered switches and gates, and space-cooled electronics, required the superconductor to be in the form of a very thin film whose radiative behavior cannot be adequately represented by a semi-infinite analysis. Two properties of particular importance are the film absorptance and the combined film/substrate absorptance, which are crucial to the operation of many devices. This paper reports on calculations of the absorptance of superconducting-state Y-Ba-Cu-O films on MgO substrates which suggest that for film thicknesses less than about 50 nm, a decrease in the film thickness leads to an increase in both the film absorptance and the film/substrate absorptance. Furthermore, the film absorptance is maximum at some optimal value of film thickness. Assuming the film to be a smooth, continuous slab with a refractive index equal to that of the bulk Y-Ba-Cu-O is verified, at least in the normal state and for films as thin as 35 nm, by room-temperature reflectance and transmittance measurements

  3. Reduction of metallosis in hip implant using thin film coating

    Science.gov (United States)

    Rajeshshyam, R.; Chockalingam, K.; Gayathri, V.; Prakash, T.

    2018-04-01

    Hip implant finds its emerging attraction due to it continuous demand over the years. The hip implants (femoral head) and acetabulum cup) mainly fabricated by metals such as stainless steel, cobalt chrome and titanium alloys, other than that ceramics and polyethylene have been used. The metal-on-metal hip implant was found to be best implant material for most of the surgeons due to its high surface finish, low wear rate and low chance of dislocation from its position after implanting. Where in metal based hip implant shows less wear rate of 0.01mm3/year. Metal-on-metal implant finds its advantage over other materials both in its mechanical and physical stability against human load. In M-O-M Cobalt- chromium alloys induce metal allergy. The metal allergy (particulate debris) that is generated by wear, fretting, fragmentation and which is unavoidable when a prosthesis is implanted, can induce an inflammatory reaction in some circumstances. The objectives of this research to evaluate thin film coating with Nano particle additives to reduce the wear leads to regarding metal ion release. Experimental results reveals that thin film Sol-Gel coating with 4wt. % of specimen reduced the cobalt and chromium ion release and reduces the wear rate. Wear rate reduced by 98% for 4wt. % graphene in 20N and 95% for 4wt. % graphene in 10N.

  4. ITO thin films deposited by advanced pulsed laser deposition

    International Nuclear Information System (INIS)

    Viespe, Cristian; Nicolae, Ionut; Sima, Cornelia; Grigoriu, Constantin; Medianu, Rares

    2007-01-01

    Indium tin oxide thin films were deposited by computer assisted advanced PLD method in order to obtain transparent, conductive and homogeneous films on a large area. The films were deposited on glass substrates. We studied the influence of the temperature (room temperature (RT)-180 deg. C), pressure (1-6 x 10 -2 Torr), laser fluence (1-4 J/cm 2 ) and wavelength (266-355 nm) on the film properties. The deposition rate, roughness, film structure, optical transmission, electrical conductivity measurements were done. We deposited uniform ITO thin films (thickness 100-600 nm, roughness 5-10 nm) between RT and 180 deg. C on a large area (5 x 5 cm 2 ). The films have electrical resistivity of 8 x 10 -4 Ω cm at RT, 5 x 10 -4 Ω cm at 180 deg. C and an optical transmission in the visible range, around 89%

  5. Effect of oxygen on the surface morphology of CuGaS{sub 2} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Smaili, F., E-mail: fethi.smaili@voila.fr [Laboratoire de Photovoltaique et Materiaux Semi-conducteurs -ENIT BP 37, Le belvedere 1002-Tunis (Tunisia); Kanzari, M. [Laboratoire de Photovoltaique et Materiaux Semi-conducteurs -ENIT BP 37, Le belvedere 1002-Tunis (Tunisia)

    2009-08-01

    Since the effect of oxygen is very significant during the heat treatment of the thin films, we study the effect of this during the annealing of CuGaS{sub 2} thin films by two different types. In this study, CuGaS{sub 2} thin films were deposited by vacuum thermal evaporation of CuGaS{sub 2} powder on heated glass substrates at 200 deg. C submitted to a thermal gradient. The films are annealed in air and under nitrogen atmosphere at 400 deg. C for 2 h. In order to improve our understanding of the influence of oxygen during two annealing types on device performance, we have investigated our CuGaS{sub 2} material by X-ray diffraction, scanning electron microscopy (SEM), atomic force microscopy (AFM), energy dispersive X-ray analysis (EDX) and spectrophotometry. A correlation was established between the surface roughness, growth morphology and optical properties, of the annealed CuGaS{sub 2} thin films. It was found that annealing of CuGaS{sub 2} film in nitrogen atmosphere leads to a decrease of the mean grain size and to an evolution of a (112) preferred film orientation. Annealing in air results in the growth of oxide phases such as CuO and modifies the films structure and their surface morphology.

  6. Broadband back grating design for thin film solar cells

    KAUST Repository

    Janjua, Bilal; Jabbour, Ghassan E.

    2013-01-01

    In this paper, design based on tapered circular grating structure was studied, to provide broadband enhancement in thin film amorphous silicon solar cells. In comparison to planar structure an absorption enhancement of ~ 7% was realized.

  7. Laser-Printed Organic Thin-Film Transistors

    KAUST Repository

    Diemer, Peter J.; Harper, Angela F.; Niazi, Muhammad Rizwan; Petty, Anthony J.; Anthony, John E.; Amassian, Aram; Jurchescu, Oana D.

    2017-01-01

    their incorporation in large-scale manufacturing processes. Here, the first ever organic thin-film transistor fabricated with an electrophotographic laser printing process using a standard office laser printer is reported. This completely solvent-free additive

  8. Preparation of Nb thin films with bulk transition temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Peirce, L H [Florida State Univ., Tallahassee (USA). Dept. of Physics

    1984-08-01

    Thin films (1000-2000 A) of Nb were prepared with bulk transition temperatures (9.25 K) by evaporation from an electron gun. Necessary substrate temperatures, evaporation rates and H/sub 2/O pressures were determined.

  9. A Variational approach to thin film hydrodynamics of binary mixtures

    KAUST Repository

    Xu, Xinpeng; Thiele, Uwe; Qian, Tiezheng

    2015-01-01

    In order to model the dynamics of thin films of mixtures, solutions, and suspensions, a thermodynamically consistent formulation is needed such that various coexisting dissipative processes with cross couplings can be correctly described

  10. Chemical solution deposition of functional oxide thin films

    CERN Document Server

    Schneller, Theodor; Kosec, Marija

    2014-01-01

    Chemical Solution Deposition (CSD) is a highly-flexible and inexpensive technique for the fabrication of functional oxide thin films. Featuring nearly 400 illustrations, this text covers all aspects of the technique.

  11. Mechanism of spontaneous hole formation in thin polymeric films

    DEFF Research Database (Denmark)

    Yu, Kaijia; Rasmussen, Henrik K.; Román Marín, José Manuel

    2012-01-01

    We show computationally that (molten) thin polymeric film containing nonequilibrium configurations originating from a solvent evaporation may develop holes spontaneously in the molten state, and that they appear delayed. Polymers above the glass transition temperature are liquids where the flow...

  12. Simple gun for vapor deposition of organic thin films

    International Nuclear Information System (INIS)

    Sato, N.; Seki, K.; Inokuchi, H.

    1987-01-01

    A simple evaporation gun for preparing organic thin films was fabricated using commercially available parts of an electron gun for a TV Braun tube. The device permits sample heating to be easily controlled because of the small heat capacity

  13. Multiferroic iron oxide thin films at room temperature

    Czech Academy of Sciences Publication Activity Database

    Gich, M.; Fina, I.; Morelli, Alessio; Sánchez, F.; Alexe, M.; Gazquez, J.; Fontcuberta, J.; Roig, A.

    2014-01-01

    Roč. 26, č. 27 (2014), s. 4645-4652 ISSN 0935-9648 Institutional support: RVO:68378271 Keywords : multiferroic * iron oxide * thin film Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 17.493, year: 2014

  14. Bandtail characteristics in InN thin films

    International Nuclear Information System (INIS)

    Shen, W.Z.; Jiang, L.F.; Yang, H.F.; Meng, F.Y.; Ogawa, H.; Guo, Q.X.

    2002-01-01

    The Urbach bandtail characteristics in InN thin films grown by radio-frequency magnetron sputtering on sapphire (0001) substrates have been investigated both theoretically and experimentally. The bandtail parameter in InN thin films has been obtained by temperature-dependent transmission spectra, with the aid of a detailed calculation of the transmission profile. A bandtail model based on the calculation of density of occupied states and the carrier-phonon interaction has been employed to analyze the temperature-dependent bandtail characteristics. The bandtail parameter is in the range of 90-120 meV in the InN thin film. It is found that the carrier-phonon interaction in InN is weak and the structural disorder contribution (∼90 meV) dominates over the interactive terms. The high structural disorder in InN thin films may relate to the high nonradiative recombination centers

  15. High Performance Thin-Film Composite Forward Osmosis Membrane

    KAUST Repository

    Yip, Ngai Yin; Tiraferri, Alberto; Phillip, William A.; Schiffman, Jessica D.; Elimelech, Menachem

    2010-01-01

    obstacle hindering further advancements of this technology. This work presents the development of a high performance thin-film composite membrane for forward osmosis applications. The membrane consists of a selective polyamide active layer formed

  16. A thin film hydroponic system for plant studies

    Science.gov (United States)

    Hines, Robert; Prince, Ralph; Muller, Eldon; Schuerger, Andrew

    1990-01-01

    The Land Pavillion, EPCOT Center, houses a hydroponic, thin film growing system identical to that residing in NASA's Biomass Production Chamber at Kennedy Space Center. The system is targeted for plant disease and nutrition studies. The system is described.

  17. Phonon transport across nano-scale curved thin films

    Energy Technology Data Exchange (ETDEWEB)

    Mansoor, Saad B.; Yilbas, Bekir S., E-mail: bsyilbas@kfupm.edu.sa

    2016-12-15

    Phonon transport across the curve thin silicon film due to temperature disturbance at film edges is examined. The equation for radiative transport is considered via incorporating Boltzmann transport equation for the energy transfer. The effect of the thin film curvature on phonon transport characteristics is assessed. In the analysis, the film arc length along the film centerline is considered to be constant and the film arc angle is varied to obtain various film curvatures. Equivalent equilibrium temperature is introduced to assess the phonon intensity distribution inside the curved thin film. It is found that equivalent equilibrium temperature decay along the arc length is sharper than that of in the radial direction, which is more pronounced in the region close to the film inner radius. Reducing film arc angle increases the film curvature; in which case, phonon intensity decay becomes sharp in the close region of the high temperature edge. Equivalent equilibrium temperature demonstrates non-symmetric distribution along the radial direction, which is more pronounced in the near region of the high temperature edge.

  18. Phonon transport across nano-scale curved thin films

    International Nuclear Information System (INIS)

    Mansoor, Saad B.; Yilbas, Bekir S.

    2016-01-01

    Phonon transport across the curve thin silicon film due to temperature disturbance at film edges is examined. The equation for radiative transport is considered via incorporating Boltzmann transport equation for the energy transfer. The effect of the thin film curvature on phonon transport characteristics is assessed. In the analysis, the film arc length along the film centerline is considered to be constant and the film arc angle is varied to obtain various film curvatures. Equivalent equilibrium temperature is introduced to assess the phonon intensity distribution inside the curved thin film. It is found that equivalent equilibrium temperature decay along the arc length is sharper than that of in the radial direction, which is more pronounced in the region close to the film inner radius. Reducing film arc angle increases the film curvature; in which case, phonon intensity decay becomes sharp in the close region of the high temperature edge. Equivalent equilibrium temperature demonstrates non-symmetric distribution along the radial direction, which is more pronounced in the near region of the high temperature edge.

  19. Niobium thin film deposition studies on copper surfaces for superconducting radio frequency cavity applications

    Energy Technology Data Exchange (ETDEWEB)

    W. M. Roach, D. B. Beringer, J. R. Skuza, W. A. Oliver, C. Clavero, C. E. Reece, R. A. Lukaszew

    2012-06-01

    Thin film coatings have the potential to increase both the thermal efficiency and accelerating gradient in superconducting radio frequency accelerator cavities. However, before this potential can be realized, systematic studies on structure-property correlations in these thin films need to be carried out since the reduced geometry, combined with specific growth parameters, can modify the physical properties of the materials when compared to their bulk form. Here, we present our systematic studies of Nb thin films deposited onto Cu surfaces to clarify possible reasons for the limited success that this process exhibited in previous attempts. We compare these films with Nb grown on other surfaces. In particular, we study the crystal structure and surface morphology and their effect on superconducting properties, such as critical temperature and lower critical field. We found that higher deposition temperature leads to a sharper critical temperature transition, but also to increased roughness indicating that there are competing mechanisms that must be considered for further optimization.

  20. Preparation of Pb(Zr, Ti)O3 Thin Films on Glass Substrates

    Science.gov (United States)

    Hioki, Tsuyoshi; Akiyama, Masahiko; Ueda, Tomomasa; Onozuka, Yutaka; Hara, Yujiro; Suzuki, Kouji

    2000-09-01

    Lead-zirconate-titanate (PZT) thin films were prepared on non-alkaline glass substrates widely used in liquid crystal display (LCD) devices, by plasma-assisted magnetron RF sputtering with an immersed coil. After preparation of the PZT thin film, the glass was available for use in LCD device processing. No mutual diffusion of the elements was recognized between the glass substrate and the bottom electrode. The PZT layer had a dense film structure with rectangular and columnar grains, and only its perovskite phase was crystalline. PZT thin films on a glass substrate had leakage current densities of about 10-8 A/cm2, acceptable hysteresis loop shapes with the remanent polarization (Pr) of 45 μC/cm2 and the coercive field (Ec) of 90 kV/cm. Ferroelectric properties on a glass substrate almost conform with those on a Si-based substrate.