WorldWideScience

Sample records for laser deposited boron

  1. Characterizing the Effect of Laser Power on Laser Metal Deposited Titanium Alloy and Boron Carbide

    Science.gov (United States)

    Akinlabi, E. T.; Erinosho, M. F.

    2017-11-01

    Titanium alloy has gained acceptance in the aerospace, marine, chemical, and other related industries due to its excellent combination of mechanical and corrosion properties. In order to augment its properties, a hard ceramic, boron carbide has been laser cladded with it at varying laser powers between 0.8 and 2.4 kW. This paper presents the effect of laser power on the laser deposited Ti6Al4V-B4C composites through the evolving microstructures and microhardness. The microstructures of the composites exhibit the formation of α-Ti phase and β-Ti phase and were elongated towards the heat affected zone. These phases were terminated at the fusion zone and globular microstructures were found growing epitaxially just immediately after the fusion zone. Good bondings were formed in all the deposited composites. Sample A1 deposited at a laser power of 0.8 kW and scanning speed of 1 m/min exhibits the highest hardness of HV 432 ± 27, while sample A4 deposited at a laser power of 2.0 kW and scanning speed of 1 m/min displays the lowest hardness of HV 360 ± 18. From the hardness results obtained, ceramic B4C has improved the mechanical properties of the primary alloy.

  2. Study on boron-film thermal neutron converter prepared by pulsed laser deposition

    International Nuclear Information System (INIS)

    Song Zifeng; Ye Shuzhen; Chen Ziyu; Song Liao; Shen Ji

    2011-01-01

    The boron film converter used in the position-sensitive thermal neutron detector is discussed and the method of preparing this converter layer via Pulsed Laser Deposition (PLD) is introduced. The morphology and the composition were studied by Scanning Electron Microscopy (SEM) and X-ray Photoelectron Spectroscopy (XPS). Both boron and boride existed on the layer surface. It was shown that the energy intensity of laser beam and the substrate temperature both had an important influence on the surface morphology of the film.

  3. Study on boron-film thermal neutron converter prepared by pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Song Zifeng; Ye Shuzhen; Chen Ziyu; Song Liao [Department of Modern Physics, University of Science and Technology of China, Anhui Hefei 230026 (China); Shen Ji, E-mail: shenji@ustc.edu.c [Department of Modern Physics, University of Science and Technology of China, Anhui Hefei 230026 (China)

    2011-02-15

    The boron film converter used in the position-sensitive thermal neutron detector is discussed and the method of preparing this converter layer via Pulsed Laser Deposition (PLD) is introduced. The morphology and the composition were studied by Scanning Electron Microscopy (SEM) and X-ray Photoelectron Spectroscopy (XPS). Both boron and boride existed on the layer surface. It was shown that the energy intensity of laser beam and the substrate temperature both had an important influence on the surface morphology of the film.

  4. Synthesis of few-layer, large area hexagonal-boron nitride by pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Glavin, Nicholas R. [Nanoelectronic Materials Branch, Air Force Research Laboratory, Wright-Patterson AFB, Dayton, OH 45433 (United States); School of Mechanical Engineering and Birck Nanotechnology Center, Purdue University, West Lafayette, IN 47907 (United States); Jespersen, Michael L. [Nanoelectronic Materials Branch, Air Force Research Laboratory, Wright-Patterson AFB, Dayton, OH 45433 (United States); University of Dayton Research Institute, 300 College Park, Dayton, OH 45469 (United States); Check, Michael H. [Nanoelectronic Materials Branch, Air Force Research Laboratory, Wright-Patterson AFB, Dayton, OH 45433 (United States); Hu, Jianjun [Nanoelectronic Materials Branch, Air Force Research Laboratory, Wright-Patterson AFB, Dayton, OH 45433 (United States); University of Dayton Research Institute, 300 College Park, Dayton, OH 45469 (United States); Hilton, Al M. [Nanoelectronic Materials Branch, Air Force Research Laboratory, Wright-Patterson AFB, Dayton, OH 45433 (United States); Wyle Laboratories, Dayton, OH 45433 (United States); Fisher, Timothy S. [School of Mechanical Engineering and Birck Nanotechnology Center, Purdue University, West Lafayette, IN 47907 (United States); Voevodin, Andrey A. [Nanoelectronic Materials Branch, Air Force Research Laboratory, Wright-Patterson AFB, Dayton, OH 45433 (United States)

    2014-12-01

    Pulsed laser deposition (PLD) has been investigated as a technique for synthesis of ultra-thin, few-layer hexagonal boron nitride (h-BN) thin films on crystalline highly ordered pyrolytic graphite (HOPG) and sapphire (0001) substrates. The plasma-based processing technique allows for increased excitations of deposited atoms due to background nitrogen gas collisional ionizations and extended resonance time of the energetic species presence at the condensation surface. These processes permit growth of thin, polycrystalline h-BN at 700 °C, a much lower temperature than that required by traditional growth methods. Analysis of the as-deposited films reveals epitaxial-like growth on the nearly lattice matched HOPG substrate, resulting in a polycrystalline h-BN film, and amorphous BN (a-BN) on the sapphire substrates, both with thicknesses of 1.5–2 nm. Stoichiometric films with boron-to-nitrogen ratios of unity were achieved by adjusting the background pressure within the deposition chamber and distance between the target and substrate. The reduction in deposition temperature and formation of stoichiometric, large-area h-BN films by PLD provide a process that is easily scaled-up for two-dimensional dielectric material synthesis and also present a possibility to produce very thin and uniform a-BN. - Highlights: • PLD was used to synthesize boron nitride thin films on HOPG and sapphire substrates. • Lattice matched substrate allowed for formation of polycrystalline h-BN. • Nitrogen gas pressure directly controlled film chemistry and structure. • Technique allows for ultrathin, uniform films at reduced processing temperatures.

  5. Effect of boron incorporation on the structure and electrical properties of diamond-like carbon films deposited by femtosecond and nanosecond pulsed laser ablation

    Energy Technology Data Exchange (ETDEWEB)

    Sikora, A. [Laboratoire Hubert Curien, UMR 5516 CNRS, Universite Jean Monnet, 18 Rue Pr. Benoit Lauras, 42000 Saint-Etienne (France); Bourgeois, O. [Institut Neel, UPR 2940 CNRS, 25 Avenue des Martyrs, 38042 Grenoble Cedex 9 (France); Sanchez-Lopez, J.C. [Instituto de Ciencia de Materiales de Sevilla, Avda. Americo Vespucio, 49 41092 Sevilla (Spain); Rouzaud, J.-N. [Laboratoire de Geologie, UMR 8538 CNRS, Ecole Normale Superieure, 45 Rue d' Ulm, 75230 Paris Cedex 05 (France); Rojas, T.C. [Instituto de Ciencia de Materiales de Sevilla, Avda. Americo Vespucio, 49 41092 Sevilla (Spain); Loir, A.-S. [Laboratoire Hubert Curien, UMR 5516 CNRS, Universite Jean Monnet, 18 Rue Pr. Benoit Lauras, 42000 Saint-Etienne (France); Garden, J.-L. [Institut Neel, UPR 2940 CNRS, 25 Avenue des Martyrs, 38042 Grenoble Cedex 9 (France); Garrelie, F. [Laboratoire Hubert Curien, UMR 5516 CNRS, Universite Jean Monnet, 18 Rue Pr. Benoit Lauras, 42000 Saint-Etienne (France); Donnet, C., E-mail: christophe.donnet@univ-st-etienne.f [Laboratoire Hubert Curien, UMR 5516 CNRS, Universite Jean Monnet, 18 Rue Pr. Benoit Lauras, 42000 Saint-Etienne (France)

    2009-12-31

    The influence of the incorporation of boron in diamond-like carbon (DLC) films on the microstructure of the coatings has been investigated. The boron-containing DLC films (a-C:B) have been deposited by pulsed laser deposition (PLD) at room temperature in high vacuum conditions, by ablating graphite and boron targets either with a femtosecond pulsed laser (800 nm, 150 fs, fs-DLC) or with a nanosecond pulsed laser (248 nm, 20 ns, ns-DLC). Alternative ablation of the graphite and boron targets has been carried out to deposit the a-C:B films. The film structure and composition have been highlighted by coupling Field Emission Scanning Electron Microscopy, Electron Energy Loss Spectroscopy and High Resolution Transmission Electron Microscopy. Using the B K-edge, EELS characterization reveals the boron effect on the carbon bonding. Moreover, the plasmon energy reveals a tendency of graphitization associated to the boron doping. Pure boron particles have been characterized by HRTEM and reveal that those particles are amorphous or crystallized. The nanostructures of the boron-doped ns-DLC and the boron-doped fs-DLC are thus compared. In particular, the incorporation of boron in the DLC matrix is highlighted, depending on the laser used for deposition. Electrical measurements show that some of these films have potentialities to be used in low temperature thermometry, considering their conductivity and temperature coefficient of resistance (TCR) estimated within the temperature range 160-300 K.

  6. Preparation of calcium-doped boron nitride by pulsed laser deposition

    International Nuclear Information System (INIS)

    Anzai, Atsushi; Fuchigami, Masayo; Yamanaka, Shoji; Inumaru, Kei

    2012-01-01

    Highlights: ► Ca-doped boron nitride was prepared by pulsed laser deposition. ► The films do not have long range order structure in terms of XRD. ► But the films had short-range order structure of h-BN sheets. ► Ca-free films had the same optical band gap as crystalline bulk h-BN (5.8 eV.) ► Ca-doping brought about decreases of the optical band gap by ca. 0.4 eV. -- Abstract: Calcium-doped BN thin films Ca x BN y (x = 0.05–0.1, y = 0.7–0.9) were grown on α-Al 2 O 3 (0 0 1) substrates by pulsed laser deposition (PLD) using h-BN and Ca 3 N 2 disks as the targets under nitrogen radical irradiation. Infrared ATR spectra demonstrated the formation of short range ordered structure of BN hexagonal sheets, while X-ray diffraction gave no peak indicating the absence of long-range order structure in the films. It was notable that Ca-doped film had 5.45–5.55 eV of optical band gap, while the band gap of Ca-free films was 5.80–5.85 eV. This change in the band gap is ascribed to interaction of Ca with the BN sheets; first principle calculations on h-BN structure indicated that variation of inter-plane distance between the BN layers did not affect the band gap. This study highlights that PLD could prepare BN having short-range structure of h-BN sheets and being doped with electropositive cation which varies the optical band gap of the films.

  7. Differences in Nanosecond Laser Ablation and Deposition of Tungsten, Boron, and WB2/B Composite due to Optical Properties

    Directory of Open Access Journals (Sweden)

    Tomasz Moscicki

    2016-01-01

    Full Text Available The first attempt to the deposition of WB3 films using nanosecond Nd:YAG laser demonstrated that deposited coatings are superhard. However, they have very high roughness. The deposited films consisted mainly of droplets. Therefore, in the present work, the explanation of this phenomenon is conducted. The interaction of Nd:YAG nanosecond laser pulse with tungsten, boron, and WB2/B target during ablation is investigated. The studies show the fundamental differences in ablation of those materials. The ablation of tungsten is thermal and occurs due to only evaporation. In the same conditions, during ablation of boron, the phase explosion and/or fragmentation due to recoil pressure is observed. The deposited films have a significant contribution of big debris with irregular shape. In the case of WB2/B composite, ablation is significantly different. The ablation seems to be the detonation in the liquid phase. The deposition mechanism is related mainly to the mechanical transport of the target material in the form of droplets, while the gaseous phase plays marginal role. The main origin of differences is optical properties of studied materials. A method estimating phase explosion occurrence based on material data such as critical temperature, thermal diffusivity, and optical properties is shown. Moreover, the effect of laser wavelength on the ablation process and the quality of the deposited films is discussed.

  8. Synthesis of Few-Layer, Large Area Hexagonal-Boron Nitride by Pulsed Laser Deposition (POSTPRINT)

    Science.gov (United States)

    2014-09-01

    invention that may relate to them. This report was cleared for public release by the USAF 88th Air Base Wing (88 ABW) Public Affairs Office (PAO) and...ered with a shutter. Depositions were performed in nitrogen background gas, where pressure was controlled by a butterfly valve to preset values within

  9. Reactive sputter deposition of boron nitride

    International Nuclear Information System (INIS)

    Jankowski, A.F.; Hayes, J.P.; McKernan, M.A.; Makowiecki, D.M.

    1995-10-01

    The preparation of fully dense, boron targets for use in planar magnetron sources has lead to the synthesis of Boron Nitride (BN) films by reactive rf sputtering. The deposition parameters of gas pressure, flow and composition are varied along with substrate temperature and applied bias. The films are characterized for composition using Auger electron spectroscopy, for chemical bonding using Raman spectroscopy and for crystalline structure using transmission electron microscopy. The deposition conditions are established which lead to the growth of crystalline BN phases. In particular, the growth of an adherent cubic BN coating requires 400--500 C substrate heating and an applied -300 V dc bias

  10. Deposition of Boron in Possible Evaporite Deposits in Gale Crate

    Science.gov (United States)

    Gasda, P. J.; Peets, E.; Lamm, S. N.; Rapin, W.; Lanza, N.; Frydenvang, J.; Clark, B. C.; Herkenhoff, K. E.; Bridges, J.; Schwenzer, S. P.; Haldeman, E. B.; Wiens, R. C.; Maurice, S.; Clegg, S. M.; Delapp, D.; Sanford, V.; Bodine, M. R.; McInroy, R.

    2017-12-01

    Boron has been previously detected in Gale crater using the ChemCam instrument on board the NASA Curiosity rover within calcium sulfate fracture fill hosted by lacustrine mudstone and eolian sandstone units. Recent results show that up to 300 ppm B is present in the upper sections of the lacustrine unit. Boron has been detected in both the groundwater-emplaced calcium sulfate fracture fill materials and bedding-parallel calcium sulfate layers. The widespread bedding-parallel calcium sulfate layers within the upper strata of the lacustrine bedrock that Curiosity has encountered recently could be interpreted as primary evaporite deposits. We have two hypotheses for the history of boron in Gale crater. In both hypotheses, borates were first deposited as lake water evaporated, depositing primary evaporates that were later re-dissolved by groundwater, which redistributed the boron into secondary evaporitic calcium sulfate fracture fill deposits. In the first scenario, Gale crater may have undergone a period of perennial lake formation during a drier period of martian history, depositing layers of evaporitic minerals (including borates) among lacustrine mudstone layers. In the second scenario, lake margins could have become periodically exposed during cyclic drops in lake level and subsequently desiccated. Evaporites were deposited and desiccation features were formed in lowstand deposits. Either hypothetical scenario of evaporite deposition would promote prebiotic chemical reactions via wet-dry cycles. Boron may be an important prebiotic element, and as such, its presence in ancient martian surface and groundwater provides evidence that important prebiotic chemical reactions could occur on Mars if organics were present. The presence of boron in ancient Gale crater groundwater also provides additional evidence that a habitable environment existed in the martian subsurface well after the expected disappearance of liquid water on the surface of Mars. We will report on the

  11. Research of boron conversion coating in neutron detector with boron deposited GEM

    International Nuclear Information System (INIS)

    Ye Di; Sun Zhijia; Zhou Jianrong; Wang Yanfeng; Yang Guian; Xu Hong; Chen Yuanbai; Xiao Yu; Diao Xungang

    2014-01-01

    GEM is a flourishing new gas detector and nowadays its technology become more mature. It has outstanding properties, such as excellent position resolution, high counting rate, radiation resistance, simple and flexible signal readout, can be large-area detector, wide application range. Detector with boron deposited GEM uses multilayer GEM with deposited boron film as neutron conversion carrier which reads out the information of neutron shot from the readout electrode with gas amplification from every GEM layer. The detector is high performance which can meet the demands of neutron detector of a new generation. Boron deposited neutron conversion electrode with boron deposited cathode and GEM included is the core part of the detector. As boron is a high-melting-point metalloid (> 2 000 ℃), electroplating and thermal evaporation are inappropriate ways. So finding a way to deposit boron on electrode which can meet the demands become a key technology in the development of neutron detector with boron deposited GEM. Compared with evaporation, sputtering has features such as low deposition temperature, high film purity, nice adhesive, thus is appropriate for our research. Magnetron sputtering is a improved way of sputtering which can get lower sputtering air pressure and higher target voltage, so that we can get better films. Through deposit process, the research uses magnetron sputtering to deposit pure boron film on copper electrode and GEM film. This method can get high quality, nice adhere, high purity, controllable uniformity, low cost film with high speed film formation. (authors)

  12. Kinetics of chemical vapor deposition of boron on molybdenum

    International Nuclear Information System (INIS)

    Tanaka, W.; Nakaanishi, N.; Kato, E.

    1987-01-01

    Experimental rate data of chemical vapor deposition of boron by reduction of boron trichloride with hydrogen are analyzed to determine the reaction mechanism. The reaction orders with respect to the partial pressures of hydrogen and boron trichloride are one half and one third, respectively. It has been found that the outer layer of a deposited film is Mo/sub 2/B/sub 5/ and the inner layer is MoB by the use of X-ray diffraction and EPMA line analysis

  13. Laser-induced photochemical enrichment of boron isotopes

    International Nuclear Information System (INIS)

    Freund, S.M.; Ritter, J.J.

    1976-01-01

    A boron trichloride starting material containing both boron-10 isotopes and boron-11 isotopes is selectively enriched in one or the other of these isotopes by a laser-induced photochemical method involving the reaction of laser-excited boron trichloride with either H 2 S or D 2 S. The method is carried out by subjecting a low pressure gaseous mixture of boron trichloride starting material and the sulfide to infrared radiation from a carbon dioxide TE laser. The wave length of the radiation is selected so as to selectively excite one or the other of boron-10 BCl 3 molecules or boron-11 BCl 3 molecules, thereby making them preferentially more reactive with the sulfide. The laser-induced reaction produces both a boron-containing solid phase reaction product and a gaseous phase containing mostly unreacted BCl 3 and small amounts of sulfhydroboranes. Pure boron trichloride selectively enriched in one of the isotopes is recovered as the primary product of the method from the gaseous phase by a multi-step recovery procedure. Pure boron trichloride enriched in the other isotope is recovered as a secondary product of the method by the subsequent chlorination of the solid phase reaction product followed by separation of BCl 3 from the mixture of gaseous products resulting from the chlorination

  14. Electrophoretic deposition of boron-10 in neutron detectors electrodes

    International Nuclear Information System (INIS)

    Oliveira Sampa, M.H. de; Vinhas, L.A.; Vieira, J.M.

    1990-01-01

    Process of boron-10 electrophoresis on large area of aluminum substrates was developed with the aim of using them in the construction of neutron detectors. After definition and optimization of the boron electrophoresis parameters, depositions of boron-10 on aluminum cylinders were performed and used as electrodes in gamma compensated and non-compensated ionization chambers and in proportional detectors. These prototypes were designed and builded at IPEN-CNEN-SP, and submited for characterization tests at IEA-R1 reactor, and they fulfil the technical specifications of the project. (author) [pt

  15. Separation of boron isotopes by infrared laser

    International Nuclear Information System (INIS)

    Suzuki, Kazuya

    1995-01-01

    Vibrationally excited chemical reaction of boron tribromide (BBr 3 ) with oxygen (O 2 ) is utilized to separate 10 B and 11 B. Infrared absorption of 10 BBr 3 is at 11.68μ and that of 11 BBr 3 is at 12.18μ. The wavelengths of ammonia laser made in the laboratory were mainly 11.71μ, 12.08μ and 12.26μ. Irradiation was done by focussing the laser with ZnSe lens on the sample gas (mixture of 1.5 torr of natural BBr 3 and 4.5 torr of O 2 ) in the reaction cell. Depletions of 10 BBr 3 and 11 BBr 3 due to chemical reaction of BBr 3 with O 2 was measured with infrared spectrometer. The maximum separation factor β( 10 B/ 11 B) obtained was about 4.5 (author)

  16. Kinetics of chemical vapor deposition of boron on molybdenum

    International Nuclear Information System (INIS)

    Tanaka, H.; Nakanishi, N.; Kato, E.

    1987-01-01

    Experimental rate data of chemical vapor deposition of boron by reduction of boron trichloride with hydrogen are analyzed to determine the reaction mechanism. The experiments were conducted at atmospheric pressure. The weight change of the sample was noted by means of a thermobalance. Molybdenum was used as the substrate. It has been found that the outer layer of the deposited film is Mo/sub 2/B/sub 5/ and the inner layer is MoB, and in the stational state of the reaction, the diffusion in the solid state is considered not to be rate controlling. When mass transport limitation was absent, the reaction orders with respect to boron trichloride and hydrogen were one third and one half, respectively. By comparing these orders with those obtained from Langmuir-Hinshelwood type equations, the rate controlling mechanism is identified to be the desorption of hydrogen chloride from the substrate

  17. Physical vapor deposition of cubic boron nitride thin films

    International Nuclear Information System (INIS)

    Kester, D.J.

    1991-01-01

    Cubic boron nitride was successfully deposited using physical vapor-deposition methods. RF-sputtering, magnetron sputtering, dual-ion-beam deposition, and ion-beam-assisted evaporation were all used. The ion-assisted evaporation, using boron evaporation and bombardment by nitrogen and argon ions, led to successful cubic boron nitride growth over the widest and most controllable range of conditions. It was found that two factors were important for c-BN growth: bombardment of the growing film and the presence of argon. A systematic study of the deposition conditions was carried out. It was found that the value of momentum transferred into the growing from by the bombarding ions was critical. There was a very narrow transition range in which mixed cubic and hexagonal phase films were prepared. Momentum-per-atom value took into account all the variables involved in ion-assisted deposition: deposition rate, ion energy, ion flux, and ion species. No other factor led to the same control of the process. The role of temperature was also studied; it was found that at low temperatures only mixed cubic and hexagonal material are deposited

  18. CO2 Laser Cutting of Hot Stamping Boron Steel Sheets

    OpenAIRE

    Pasquale Russo Spena

    2017-01-01

    This study investigates the quality of CO2 laser cutting of hot stamping boron steel sheets that are employed in the fabrication of automotive body-in-white. For this purpose, experimental laser cutting tests were conducted on 1.2 mm sheets at varying levels of laser power, cutting speed, and oxygen pressure. The resulting quality of cut edges was evaluated in terms of perpendicularity tolerance, surface irregularity, kerf width, heat affected zone, and dross extension. Experimental tests wer...

  19. Laser deposition of HTSC films

    International Nuclear Information System (INIS)

    Sobol', Eh.N.; Bagratashvili, V.N.; Zherikhin, A.N.; Sviridov, A.P.

    1990-01-01

    Studies of the high-temperature superconducting (HTSC) films fabrication by the laser deposition are reviewed. Physical and chemical processes taking place during laser deposition are considered, such as the target evaporation, the material transport from the target to the substrate, the film growth on the substrate, thermochemical reactions and mass transfer within the HTSC films and their stability. The experimental results on the laser deposition of different HTSC ceramics and their properties investigations are given. The major technological issues are discussed including the deposition schemes, the oxygen supply, the target compositions and structure, the substrates and interface layers selection, the deposition regimes and their impact on the HTSC films properties. 169 refs.; 6 figs.; 2 tabs

  20. Spectroscopic and imaging diagnostics of pulsed laser deposition laser plasmas

    International Nuclear Information System (INIS)

    Thareja, Raj K.

    2002-01-01

    An overview of laser spectroscopic techniques used in the diagnostics of laser ablated plumes used for thin film deposition is given. An emerging laser spectroscopic imaging technique for the laser ablation material processing is discussed. (author)

  1. The vapour phase deposition of boron on titanium by the reaction between gaseous boron trichloride and titanium metal. Final report

    International Nuclear Information System (INIS)

    Cameron, D.J.; Shelton, R.A.J.

    1965-03-01

    The reaction, between boron trichloride vapour and titanium has been investigated in the temperature range 200 - 1350 deg. C. It has been found that an initial reaction leads to the formation of titanium tetrachloride and the deposition of boron on titanium, but that except for reactions between 900 and 1000 deg. C, the system is complicated by the formation of lower titanium chlorides due to secondary reactions between the titanium and titanium tetrachloride

  2. Electrophoretic deposits of boron on duralumin plates used for measuring neutron flux

    International Nuclear Information System (INIS)

    Lang, F.M.; Magnier, P.; Finck, C.

    1956-01-01

    Preparation of boron thin film deposits of around 1 mg per cm 2 on duralumin plates with a diameter of 8 cm. The boron coated plates for ionization chambers were originally prepared at the CEA by pulverization of boron carbides on sodium silicates. This method is not controlling precisely enough the quantity of boron deposit. Thus, an electrophoretic method is considered for a better control of the quantity of boron deposit in the scope of using in the future boron 10 which is costly and rare. The method described by O. Flint is not satisfying enough and a similar electrophoretic process has been developed. Full description of the method is given as well as explanation of the use of dried methanol as solvent, tannin as electrolyte and magnesium chloride to avoid alumina formation. (M.P.)

  3. Amorphous boron coatings produced with vacuum arc deposition technology

    CERN Document Server

    Klepper, C C; Yadlowsky, E J; Carlson, E P; Keitz, M D; Williams, J M; Zuhr, R A; Poker, D B

    2002-01-01

    In principle, boron (B) as a material has many excellent surface properties, including corrosion resistance, very high hardness, refractory properties, and a strong tendency to bond with most substrates. The potential technological benefits of the material have not been realized, because it is difficult to deposit it as coatings. B is difficult to evaporate, does not sputter well, and cannot be thermally sprayed. In this article, first successful deposition results from a robust system, based on the vacuum (cathodic) arc technology, are reported. Adherent coatings have been produced on 1100 Al, CP-Ti, Ti-6Al-4V, 316 SS, hard chrome plate, and 52 100 steel. Composition and thickness analyses have been performed by Rutherford backscattering spectroscopy. Hardness (H) and modules (E) have been evaluated by nanoindentation. The coatings are very pure and have properties characteristic of B suboxides. A microhardness of up to 27 GPa has been measured on a 400-nm-thick film deposited on 52 100 steel, with a corresp...

  4. Preparation and electrical properties of boron and boron phosphide films obtained by gas source molecular beam deposition

    Energy Technology Data Exchange (ETDEWEB)

    Kumashiro, Y.; Yokoyama, T.; Sakamoto, T.; Fujita, T. [Yokohama National Univ. (Japan)

    1997-10-01

    Boron and boron phosphide films were prepared by gas source molecular beam deposition on sapphire crystal at various substrate temperatures up to 800{degrees}C using cracked B{sub 2}H{sub 6} (2% in H{sub 2}) at 300{degrees}C and cracked PH{sub 3} (20% in H{sub 2}) at 900{degrees}C. The substrate temperatures and gas flow rates of the reactant gases determined the film growth. The boron films with amorphous structure are p type. Increasing growth times lead to increasing mobilities and decreasing carrier concentrations. Boron phosphide film with maximum P/B ratio is obtained at a substrate temperature of 600{degrees}C, below and above which they become phosphorous deficient due to insufficient supply of phosphorus and thermal desorption of the phosphorus as P{sub 2}, respectively, but they are all n type conductors due to phosphorus vacancies.

  5. BN-based nano-composites obtained by pulsed laser deposition

    International Nuclear Information System (INIS)

    Major, B.; Kosydar, R.; Major, L; Mroz, W.; Burdynska, S.; Jelinek, M.; Kot, M.; Kustosz, R.

    2006-01-01

    Boron nitride thin layers were produced by means of the pulsed laser deposition technique from hexagonal boron nitride target. Two types of laser i.e. Nd: YAG with Q-switch as well as KrF coupled with RF generator were used. Influence of deposition parameters on surface morphology, phase composition as well as mechanical properties is discussed. Results obtained using Fourier Transformed Infrared Spectroscopy, Transmission and Scanning Electron Microscopy, Atomic Force Microscopy are presented. Micromechanical properties measured during micro indentation, scratch and wear tests are also shown. (authors)

  6. Preparation of high-pressure phase boron nitride films by physical vapor deposition

    CERN Document Server

    Zhu, P W; Zhao, Y N; Li, D M; Liu, H W; Zou Guang Tian

    2002-01-01

    The high-pressure phases boron nitride films together with cubic, wurtzic, and explosive high-pressure phases, were successfully deposited on the metal alloy substrates by tuned substrate radio frequency magnetron sputtering. The percentage of cubic boron nitride phase in the film was about 50% as calculated by Fourier transform infrared measurements. Infrared peak position of cubic boron nitride at 1006.3 cm sup - sup 1 , which is close to the stressless state, indicates that the film has very low internal stress. Transition electron microscope micrograph shows that pure cubic boron nitride phase exits on the surface of the film. The growth mechanism of the BN films was also discussed.

  7. Frequency mixing in boron carbide laser ablation plasmas

    Science.gov (United States)

    Oujja, M.; Benítez-Cañete, A.; Sanz, M.; Lopez-Quintas, I.; Martín, M.; de Nalda, R.; Castillejo, M.

    2015-05-01

    Nonlinear frequency mixing induced by a bichromatic field (1064 nm + 532 nm obtained from a Q-switched Nd:YAG laser) in a boron carbide (B4C) plasma generated through laser ablation under vacuum is explored. A UV beam at the frequency of the fourth harmonic of the fundamental frequency (266 nm) was generated. The dependence of the efficiency of the process as function of the intensities of the driving lasers differs from the expected behavior for four-wave mixing, and point toward a six-wave mixing process. The frequency mixing process was strongly favored for parallel polarizations of the two driving beams. Through spatiotemporal mapping, the conditions for maximum efficiency were found for a significant delay from the ablation event (200 ns), when the medium is expected to be a low-ionized plasma. No late components of the harmonic signal were detected, indicating a largely atomized medium.

  8. CO2 Laser Cutting of Hot Stamping Boron Steel Sheets

    Directory of Open Access Journals (Sweden)

    Pasquale Russo Spena

    2017-10-01

    Full Text Available This study investigates the quality of CO2 laser cutting of hot stamping boron steel sheets that are employed in the fabrication of automotive body-in-white. For this purpose, experimental laser cutting tests were conducted on 1.2 mm sheets at varying levels of laser power, cutting speed, and oxygen pressure. The resulting quality of cut edges was evaluated in terms of perpendicularity tolerance, surface irregularity, kerf width, heat affected zone, and dross extension. Experimental tests were based on a L9(34 orthogonal array design, with the effects of the process parameters on the quality responses being determined by means of a statistical analysis of variance (ANOVA. Quadratic mathematical models were developed to determine the relationships between the cutting parameters and the quality responses. Finally, a routine based on an optimization criterion was employed to predict the optimal setting of cutting factors and its effect on the quality responses. A confirmation experiment was conducted to verify the appropriateness of the optimization routine. The results show that all of the examined process parameters have a key role in determining the cut quality of hot stamping boron steel sheets, with cutting speed and their interactions having the most influencing effects. Particularly, interactions can have an opposite behavior for different levels of the process parameters.

  9. Boron

    Science.gov (United States)

    Boron is an essential micronutrient element required for plant growth. Boron deficiency is wide-spread in crop plants throughout the world especially in coarse-textured soils in humid areas. Boron toxicity can also occur, especially in arid regions under irrigation. Plants respond directly to the...

  10. Surface Finish after Laser Metal Deposition

    Science.gov (United States)

    Rombouts, M.; Maes, G.; Hendrix, W.; Delarbre, E.; Motmans, F.

    Laser metal deposition (LMD) is an additive manufacturing technology for the fabrication of metal parts through layerwise deposition and laser induced melting of metal powder. The poor surface finish presents a major limitation in LMD. This study focuses on the effects of surface inclination angle and strategies to improve the surface finish of LMD components. A substantial improvement in surface quality of both the side and top surfaces has been obtained by laser remelting after powder deposition.

  11. A system to deposit boron films (boronization) in the DIII-D tokamak

    International Nuclear Information System (INIS)

    Hodapp, T.R.; Jackson, G.L.; Phillips, J.; Holtrop, K.L.; Peterson, P.L.; Winters, J.

    1992-01-01

    A system has been added to the DIII-D tokamak to coat its plasma facing surfaces with a film of boron using diborane gas. The system includes special health and safety equipment for handling the diborane gas which is toxic and inflammable. The purpose f the boron film is to reduce the levels of impurity atoms in the DIII-D plasmas. Experiments following the application of the boron film in DIII-D have led to significant reductions in plasma impurity levels and the observation of a new, very high confinement regime

  12. A system to deposit boron films (boronization) in the DIII-D tokamak

    International Nuclear Information System (INIS)

    Hodapp, T.R.; Jackson, G.L.; Phillips, J.; Holtrop, K.L.; Petersen, P.I.; Winter, J.

    1991-09-01

    A system has been added to the D3-D tokamak to coat its plasma facing surfaces with a film of boron using diborane gas. The system includes special health and safety equipment for handling the diborane gas which is toxic and inflammable. The purpose of the boron film is to reduce the levels of impurity atoms in the D3-D plasmas. Experiments following the application of the boron film in D3-D have led to significant reductions in plasma impurity levels and the observation of a new, very high confinement regime. 9 refs., 1 fig

  13. Dependence of reaction pressure on deposition and properties of boron-doped freestanding diamond films

    International Nuclear Information System (INIS)

    Li Liuan; Li Hongdong; Lue Xianyi; Cheng Shaoheng; Wang Qiliang; Ren Shiyuan; Liu Junwei; Zou Guangtian

    2010-01-01

    In this paper, we investigate the reaction pressure-dependent growth and properties of boron-doped freestanding diamond films, synthesized by hot filament chemical vapor deposition (HFCVD) at different boron-doping levels. With the decrease in pressure, the growth feature of the films varies from mixed [1 1 1] and [1 1 0] to dominated [1 1 1] texture. The low reaction pressure, as well as high boron-doping level, results in the increase (decrease) of carrier concentration (resistivity). The high concentration of atomic hydrogen in the ambient and preferable [1 1 1] growth, due to the low reaction pressure, is available for the enhancement of boron doping. The estimated residual stress increases with increase in the introducing boron level.

  14. Laser-time resolved fluorimetric determination of trace of boron in U3O8

    International Nuclear Information System (INIS)

    Xu Yongyuan; Wang Yulong; Wang Qin

    1988-01-01

    In this work, a laser-time resolved fluorimetric determinatin of trace of boron in U 3 O 8 had been developed. The boron complex with dibenzoyl methane (DBM) in a suitable medium is excited by a small nitrogen laser and emits the delay fluorescence with lifetime of 2 ms which is much longer than that of the fluorescence of uranium. Since the fluorescence of uranium doesn't interfere with determination of boron in the time resolved fluorimetric method boron need not be separated from uranium in advance. Thus the determination is very rapid and simple. The limit of determination is 0.02 ngB/ml. When 10 mgU is taken, 0.01 ppm of boron in uranium can be determined. Several samples of U 3 O 8 with boron content from 0.04 to 0.5 ppm have been determined by using this method. The results of determination have been accordant with other methods

  15. CVD boron nitride infiltration of fibrous structures: properties of low temprature deposits

    International Nuclear Information System (INIS)

    Gebhardt, J.J.

    1973-01-01

    The pyrolytic infiltration of boron nitride and silica fibrous structures with boron nitride was investigated using the thermal decomposition of B-trichloroborazole (TCB) to provide the matrix surrounding felted and 4-directional braided constructions. The deposition precursor was generated on a continuous basis by the reaction between boron trichloride and ammonium chloride in a fixed bed reactor under conditions of total conversion of the trichloride: 3BCl 3 + 3NH 4 Cl = B 3 N 3 H 3 Cl 3 + 9HCl. Deposition rates in boron nitride felt specimens varied between 8 and 28 μm/h, depending on the distance from the exterior surface at the minimum deposition temperature used (1100 0 C ). Infiltration of 4-directional silica braids was poorer because of clogging of the fiber bundle surfaces and access paths to voids in the weave. Deposits prepared at 1100 0 C and above were stable to moisture and consisted of glassy transparent materials which had no discernible x-ray diffraction pattern. Heat treatment of low temperature deposits in nitrogen at 1800 0 C caused significant growth of the crystallites and the emergence of x-ray patterns characteristic of hexagonal boron nitride. Heat treatment in vacuum caused changes in the infrared spectrum which could be correlated with mass analyses of the gases evolved. Loss of hydrogen with amines predominated to about 1500 0 C above which point the loss of nitrogen became significant. (14 figures) (U.S.)

  16. Laser vapor phase deposition of semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Karlov, N.V.; Luk' ianchuk, B.S.; Sisakian, E.V.; Shafeev, G.A.

    1987-06-01

    The pyrolytic effect of IR laser radiation is investigated with reference to the initiation and control of the vapor phase deposition of semiconductor films. By selecting the gas mixture composition and laser emission parameters, it is possible to control the deposition and crystal formation processes on the surface of semiconductors, with the main control action achieved due to the nonadiabatic kinetics of reactions in the gas phase and high temperatures in the laser heating zone. This control mechanism is demonstrated experimentally during the laser vapor deposition of germanium and silicon films from tetrachlorides on single-crystal Si and Ge substrates. 5 references.

  17. Pulsed Laser Deposition: passive and active waveguides

    Czech Academy of Sciences Publication Activity Database

    Jelínek, Miroslav; Flory, F.; Escoubas, L.

    2009-01-01

    Roč. 34, č. 4 (2009), s. 438-449 ISSN 0268-1900 R&D Projects: GA ČR GA202/06/0216 Institutional research plan: CEZ:AV0Z10100522 Keywords : PLD * pulsed laser deposition * laser ablation * passive waveguides * active waveguides * waveguide laser * sensors * thin films * butane detection Subject RIV: BH - Optics, Masers, Lasers Impact factor: 0.384, year: 2009

  18. Reactive pulsed laser deposition with gas jet

    International Nuclear Information System (INIS)

    Rakowski, R.; Bartnik, A.; Fiedorowicz, H.; Jarocki, R.; Kostecki, J.; Szczurek, M.

    2001-01-01

    Different metal (Sn, Al, steel, Cu, W) thin films were synthesized by reactive pulsed laser deposition on steel, copper and glass wafers. In our work pulsed Nd:glass (10 J, 800μs) laser system was used. Jet of gas was created by electromagnetic valve perpendicularly to the laser beam. Nitrogen, oxygen and argon were used. We used several to tens laser shots to obtain visible with the naked eye layers. Thin layers were observed under an optical microscope. (author)

  19. Effects of heat treatment on the microstructure of amorphous boron carbide coating deposited on graphite substrates by chemical vapor deposition

    International Nuclear Information System (INIS)

    Li Siwei; Zeng Bin; Feng Zude; Liu Yongsheng; Yang Wenbin; Cheng Laifei; Zhang Litong

    2010-01-01

    A two-layer boron carbide coating is deposited on a graphite substrate by chemical vapor deposition from a CH 4 /BCl 3 /H 2 precursor mixture at a low temperature of 950 o C and a reduced pressure of 10 KPa. Coated substrates are annealed at 1600 o C, 1700 o C, 1800 o C, 1900 o C and 2000 o C in high purity argon for 2 h, respectively. Structural evolution of the coatings is explored by electron microscopy and spectroscopy. Results demonstrate that the as-deposited coating is composed of pyrolytic carbon and amorphous boron carbide. A composition gradient of B and C is induced in each deposition. After annealing, B 4 C crystallites precipitate out of the amorphous boron carbide and grow to several hundreds nanometers by receiving B and C from boron-doped pyrolytic carbon. Energy-dispersive spectroscopy proves that the crystallization is controlled by element diffusion activated by high temperature annealing, after that a larger concentration gradient of B and C is induced in the coating. Quantified Raman spectrum identifies a graphitization enhancement of pyrolytic carbon. Transmission electron microscopy exhibits an epitaxial growth of B 4 C at layer/layer interface of the annealed coatings. Mechanism concerning the structural evolution on the basis of the experimental results is proposed.

  20. Thermodynamic approach to the conditions of chemical deposition of boron by contact with an inert substrate

    International Nuclear Information System (INIS)

    Thebault, J.; Naslain, R.; Hagenmuller, P.; Bernard, C.

    1978-01-01

    The optimum conditions for the synthesis of boron by chemical vapour deposition (CVD) from BCl 3 -H 2 or BBr 3 -H 2 mixtures onto an inert substrate (boron or boronized metals) have been studied by a thermodynamic approach. This approach, which postulates that states close to equilibrium are reached in the vicinity of the hot substrate, is based on the minimization of the total Gibbs free energy of the system. Between 1200 and 1900 K and under a total pressure of 1 atm, the hydrogen reduction of BCl 3 can lead to two types of by-products: BHCl 2 at all temperatures, and BCl 2 or BCl subhalides at high temperatures; BHCl 2 is the main product of the reduction at the lowest temperatures. The hydrogen reduction of BCl 3 is never complete for the conditions commonly used for the synthesis of boron. The amount of by-products and of BBr 3 which must be recycled can be minimized by utilizing BCl 3 -H 2 mixtures rich in hydrogen. The amount of boron deposited exhibits a maximum for a temperature close to 1700 K. Similar results have been obtained for BBr 3 . However, between 1000 and 1500 K and under a total pressure of 1 atm the amount of by-products (BHBr 2 and BBr 2 ) is smaller than in the case of BCl 3 . The boron yield from the reduction of BBr 3 is higher than that from BCl 3 and the percentage of boron halide which must be recycled is lower in the case of BBr 3 . Thus, BBr 3 appears to be a better source than BCl 3 for the CVD of boron. (Auth.)

  1. Laser-induced chemical vapor deposition reactions

    International Nuclear Information System (INIS)

    Teslenko, V.V.

    1990-01-01

    The results of investigation of chemical reactions of deposition of different substances from the gas phase when using the energy of pulse quasicontinuous and continuous radiation of lasers in the wave length interval from 0.193 to 10.6 μm are generalized. Main attetion is paid to deposition of inorganic substances including nonmetals (C, Si, Ge and others), metals (Cu, Au, Zn, Cd, Al, Cr, Mo, W, Ni) and some simple compounds. Experimental data on the effect of laser radiation parameters and reagent nature (hydrides, halogenides, carbonyls, alkyl organometallic compounds and others) on the deposition rate and deposit composition are described in detail. Specific features of laser-chemical reactions of deposition and prospects of their application are considered

  2. Corrosion behaviour of layers obtained by nitrogen implantation into boron films deposited onto iron substrates

    International Nuclear Information System (INIS)

    Marchetti, F.; Fedrizzi, L.; Giacomozzi, F.; Guzman, L.; Borgese, A.

    1985-01-01

    The electrochemical behaviour and corrosion resistance of boron films deposited onto Armco iron after bombardment with 100 keV N + ions were determined in various test solutions. The changes in the electrochemical parameters give evidence of lower anodic dissolution rates for the treated samples. Scanning electron microscopy and Auger analysis of the corroded surfaces confirm the presence of protective layers. (Auth.)

  3. Determination and optimization of the ζ potential in boron electrophoretic deposition on aluminium substrates

    International Nuclear Information System (INIS)

    Oliveira Sampa, M.H. de; Vinhas, L.A.; Pino, E.S.

    1991-05-01

    In this work we present an introduction of the electrophoretic process followed by a detailed experimental treatment of the technique used in the determination and optimization of the ζ-potential, mainly as a function of the electrolyte concentration, in a high purity boron electrophoretics deposition on aluminium substrates used as electrodes in neutron detectors. (author)

  4. Ultrashort pulse laser deposition of thin films

    Science.gov (United States)

    Perry, Michael D.; Banks, Paul S.; Stuart, Brent C.

    2002-01-01

    Short pulse PLD is a viable technique of producing high quality films with properties very close to that of crystalline diamond. The plasma generated using femtosecond lasers is composed of single atom ions with no clusters producing films with high Sp.sup.3 /Sp.sup.2 ratios. Using a high average power femtosecond laser system, the present invention dramatically increases deposition rates to up to 25 .mu.m/hr (which exceeds many CVD processes) while growing particulate-free films. In the present invention, deposition rates is a function of laser wavelength, laser fluence, laser spot size, and target/substrate separation. The relevant laser parameters are shown to ensure particulate-free growth, and characterizations of the films grown are made using several diagnostic techniques including electron energy loss spectroscopy (EELS) and Raman spectroscopy.

  5. Boron-enhanced diffusion in excimer laser annealed Si

    International Nuclear Information System (INIS)

    Monakhov, E.V.; Svensson, B.G.; Linnarsson, M.K.; La Magna, A.; Privitera, V.; Fortunato, G.; Mariucci, L.

    2004-01-01

    The effect of excimer laser annealing (ELA) and rapid thermal annealing (RTA) on B redistribution in B-implanted Si has been studied by secondary ion mass spectrometry (SIMS) and spreading resistance probe (SRP). B has been implanted with an energy of 1 keV and a dose of 10 16 cm -2 forming a distribution with a width of 20-30 nm and a peak concentration of ∼5 x 10 21 cm -3 . It has been found that ELA with 10 pulses of the energy density of 850 mJ/cm 2 results in a uniform B distribution over the ELA-molten region with an abrupt profile edge. SRP measurements demonstrate good activation of the implanted B after ELA, with the concentration of the activated fraction (∼10 21 cm -3 ) exceeding the solid solubility level. RTA (30 s at 1100 deg. C) of the as-implanted and ELA-treated samples leads to a diffusion of B with diffusivities exceeding the equilibrium one and the enhancement is similar for both of the samples. It is also found that RTA decreases the activated B in the ELA-treated sample to the solid solubility limit (2 x 10 20 cm -3 ). The similarity of the B diffusivity for the as-implanted and ELA-treated samples suggests that the enhancement of the B diffusivity is due to the so-called boron-enhanced diffusion (BED). Possible mechanisms of BED are discussed

  6. Large-area homogeneous periodic surface structures generated on the surface of sputtered boron carbide thin films by femtosecond laser processing

    Energy Technology Data Exchange (ETDEWEB)

    Serra, R., E-mail: ricardo.serra@dem.uc.pt [SEG-CEMUC, Mechanical Engineering Department, University of Coimbra, Rua Luís Reis Santos, 3030-788 Coimbra (Portugal); Oliveira, V. [ICEMS-Instituto de Ciência e Engenharia de Materiais e Superfícies, Avenida Rovisco Pais no 1, 1049-001 Lisbon (Portugal); Instituto Superior de Engenharia de Lisboa, Avenida Conselheiro Emídio Navarro no 1, 1959-007 Lisbon (Portugal); Oliveira, J.C. [SEG-CEMUC, Mechanical Engineering Department, University of Coimbra, Rua Luís Reis Santos, 3030-788 Coimbra (Portugal); Kubart, T. [The Ångström Laboratory, Solid State Electronics, P.O. Box 534, SE-751 21 Uppsala (Sweden); Vilar, R. [Instituto Superior de Engenharia de Lisboa, Avenida Conselheiro Emídio Navarro no 1, 1959-007 Lisbon (Portugal); Instituto Superior Técnico, Avenida Rovisco Pais no 1, 1049-001 Lisbon (Portugal); Cavaleiro, A. [SEG-CEMUC, Mechanical Engineering Department, University of Coimbra, Rua Luís Reis Santos, 3030-788 Coimbra (Portugal)

    2015-03-15

    Highlights: • Large-area LIPSS were formed by femtosecond laser processing B-C films surface. • The LIPSS spatial period increases with laser fluence (140–200 nm). • Stress-related sinusoidal-like undulations were formed on the B-C films surface. • The undulations amplitude (down to a few nanometres) increases with laser fluence. • Laser radiation absorption increases with surface roughness. - Abstract: Amorphous and crystalline sputtered boron carbide thin films have a very high hardness even surpassing that of bulk crystalline boron carbide (≈41 GPa). However, magnetron sputtered B-C films have high friction coefficients (C.o.F) which limit their industrial application. Nanopatterning of materials surfaces has been proposed as a solution to decrease the C.o.F. The contact area of the nanopatterned surfaces is decreased due to the nanometre size of the asperities which results in a significant reduction of adhesion and friction. In the present work, the surface of amorphous and polycrystalline B-C thin films deposited by magnetron sputtering was nanopatterned using infrared femtosecond laser radiation. Successive parallel laser tracks 10 μm apart were overlapped in order to obtain a processed area of about 3 mm{sup 2}. Sinusoidal-like undulations with the same spatial period as the laser tracks were formed on the surface of the amorphous boron carbide films after laser processing. The undulations amplitude increases with increasing laser fluence. The formation of undulations with a 10 μm period was also observed on the surface of the crystalline boron carbide film processed with a pulse energy of 72 μJ. The amplitude of the undulations is about 10 times higher than in the amorphous films processed at the same pulse energy due to the higher roughness of the films and consequent increase in laser radiation absorption. LIPSS formation on the surface of the films was achieved for the three B-C films under study. However, LIPSS are formed under

  7. Large-area homogeneous periodic surface structures generated on the surface of sputtered boron carbide thin films by femtosecond laser processing

    International Nuclear Information System (INIS)

    Serra, R.; Oliveira, V.; Oliveira, J.C.; Kubart, T.; Vilar, R.; Cavaleiro, A.

    2015-01-01

    Highlights: • Large-area LIPSS were formed by femtosecond laser processing B-C films surface. • The LIPSS spatial period increases with laser fluence (140–200 nm). • Stress-related sinusoidal-like undulations were formed on the B-C films surface. • The undulations amplitude (down to a few nanometres) increases with laser fluence. • Laser radiation absorption increases with surface roughness. - Abstract: Amorphous and crystalline sputtered boron carbide thin films have a very high hardness even surpassing that of bulk crystalline boron carbide (≈41 GPa). However, magnetron sputtered B-C films have high friction coefficients (C.o.F) which limit their industrial application. Nanopatterning of materials surfaces has been proposed as a solution to decrease the C.o.F. The contact area of the nanopatterned surfaces is decreased due to the nanometre size of the asperities which results in a significant reduction of adhesion and friction. In the present work, the surface of amorphous and polycrystalline B-C thin films deposited by magnetron sputtering was nanopatterned using infrared femtosecond laser radiation. Successive parallel laser tracks 10 μm apart were overlapped in order to obtain a processed area of about 3 mm 2 . Sinusoidal-like undulations with the same spatial period as the laser tracks were formed on the surface of the amorphous boron carbide films after laser processing. The undulations amplitude increases with increasing laser fluence. The formation of undulations with a 10 μm period was also observed on the surface of the crystalline boron carbide film processed with a pulse energy of 72 μJ. The amplitude of the undulations is about 10 times higher than in the amorphous films processed at the same pulse energy due to the higher roughness of the films and consequent increase in laser radiation absorption. LIPSS formation on the surface of the films was achieved for the three B-C films under study. However, LIPSS are formed under different

  8. ITO thin films deposited by advanced pulsed laser deposition

    International Nuclear Information System (INIS)

    Viespe, Cristian; Nicolae, Ionut; Sima, Cornelia; Grigoriu, Constantin; Medianu, Rares

    2007-01-01

    Indium tin oxide thin films were deposited by computer assisted advanced PLD method in order to obtain transparent, conductive and homogeneous films on a large area. The films were deposited on glass substrates. We studied the influence of the temperature (room temperature (RT)-180 deg. C), pressure (1-6 x 10 -2 Torr), laser fluence (1-4 J/cm 2 ) and wavelength (266-355 nm) on the film properties. The deposition rate, roughness, film structure, optical transmission, electrical conductivity measurements were done. We deposited uniform ITO thin films (thickness 100-600 nm, roughness 5-10 nm) between RT and 180 deg. C on a large area (5 x 5 cm 2 ). The films have electrical resistivity of 8 x 10 -4 Ω cm at RT, 5 x 10 -4 Ω cm at 180 deg. C and an optical transmission in the visible range, around 89%

  9. Boron- and iron-bearing molecules in laser-induced plasma

    Energy Technology Data Exchange (ETDEWEB)

    Gaft, M.; Nagli, L.; Eliezer, N.; Groisman, Y.

    2015-08-01

    Boron combines with alkali-earth elements, such as Ca, Mg, and Sr and with oxygen to form molecules in LIP of boron-bearing minerals with strong and characteristic band emission. It may be supposed that those bands are of CaBO{sub 2}, MgBO{sub 2} and SrBO{sub 2} type. Besides, emission of BO, BO{sub 2} and FeO is also detected. - Highlights: • We studied laser-induced breakdown spectra of B with Ca, Mg and Sr in air. • Emission of polyatomic molecules was found. • Molecules of FeO were found in laser-induced plasma in air.

  10. Pulsed laser deposition of hydroxyapatite thin films

    Czech Academy of Sciences Publication Activity Database

    Koch, C.F.; Johnson, S.; Kumar, D.; Jelínek, Miroslav; Chrisey, D.B.; Doraiswamy, A.; Jin, C.; Narayan, R.J.; Mihailescu, I. N.

    2007-01-01

    Roč. 27, - (2007), s. 484-494 ISSN 0928-4931 Institutional research plan: CEZ:AV0Z10100522 Keywords : hydroxyapatite * pulsed laser deposition * bioactive ceramic s Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.486, year: 2007

  11. Source of boron in the Palokas gold deposit, northern Finland: evidence from boron isotopes and major element composition of tourmaline

    Science.gov (United States)

    Ranta, Jukka-Pekka; Hanski, Eero; Cook, Nick; Lahaye, Yann

    2017-06-01

    The recently discovered Palokas gold deposit is part of the larger Rompas-Rajapalot gold-mineralized system located in the Paleoproterozoic Peräpohja Belt, northern Finland. Tourmaline is an important gangue mineral in the Palokas gold mineralization. It occurs as tourmalinite veins and as tourmaline crystals in sulfide-rich metasomatized gold-bearing rocks. In order to understand the origin of tourmaline in the gold-mineralized rocks, we have investigated the major element chemistry and boron isotope composition of tourmaline from three areas: (1) the Palokas gold mineralization, (2) a pegmatitic tourmaline granite, and (3) the evaporitic Petäjäskoski Formation. Based on textural evidence, tourmaline in gold mineralization is divided into two different types. Type 1 is located within the host rock and is cut by rock-forming anthophyllite crystals. Type 2 occurs in late veins and/or breccia zones consisting of approximately 80% tourmaline and 20% sulfides, commonly adjacent to quartz veins. All the studied tourmaline samples belong to the alkali-group tourmaline and can be classified as dravite and schorl. The δ11B values of the three localities lie in the same range, from 0 to -4‰. Tourmaline from the Au mineralization and from the Petäjäskoski Formation has similar compositional trends. Mg is the major substituent for Al; inferred low Fe3+/Fe2+ ratios and Na values (molybdenite related to the tourmaline-sulfide-quartz veins, we propose that the tourmaline-forming process is a result of a single magmatic-hydrothermal event related to the extensive granite magmatism at around 1.79-1.77 Ga. Tourmaline was crystallized throughout the hydrothermal process, which resulted in the paragenetic variation between type 1 and type 2. The close association of tourmaline and gold suggests that the gold precipitated from the same boron-rich source as tourmaline.

  12. Investigation of the Microstructure of Laser-Arc Hybrid Welded Boron Steel

    Science.gov (United States)

    Son, Seungwoo; Lee, Young Ho; Choi, Dong-Won; Cho, Kuk-Rae; Shin, Seung Man; Lee, Youngseog; Kang, Seong-Hoon; Lee, Zonghoon

    2018-05-01

    The microstructure of boron steel for automotive driving shaft manufacturing after laser-arc hybrid welding was investigated. Laser-arc hybrid welding technology was applied to 3-mm-thick plates of boron steel, ST35MnB. The temperature distribution of the welding pool was analyzed using the finite element method, and the microstructure of the welded boron steel was characterized using optical microscopy and scanning and transmission electron microscopies. The microstructure of the weld joint was classified into the fusion zone, the heat-affected zone (HAZ), and the base material. At the fusion zone, the bainite grains exist in the martensite matrix and show directionality because of heat input from the welding. The HAZ is composed of smaller grains, and the hardness of the HAZ is greater than that of the fusion zone. We discuss that the measured grain size and the hardness of the HAZ originate from undissolved precipitates that retard the grain growth of austenite.

  13. Characterization of laser metal deposited 316L stainless steel

    CSIR Research Space (South Africa)

    Bayode, A

    2016-06-01

    Full Text Available investigates the effects of laser power on the structural integrity, microstructure and microhardness of laser deposited 316L stainless steel. The result showed that the laser power has much influence on the evolving microstructure and microhardness...

  14. Boron-Proton Nuclear-Fusion Enhancement Induced in Boron-Doped Silicon Targets by Low-Contrast Pulsed Laser

    Directory of Open Access Journals (Sweden)

    A. Picciotto

    2014-08-01

    Full Text Available We show that a spatially well-defined layer of boron dopants in a hydrogen-enriched silicon target allows the production of a high yield of alpha particles of around 10^{9} per steradian using a nanosecond, low-contrast laser pulse with a nominal intensity of approximately 3×10^{16}  W cm^{−2}. This result can be ascribed to the nature of the long laser-pulse interaction with the target and with the expanding plasma, as well as to the optimal target geometry and composition. The possibility of an impact on future applications such as nuclear fusion without production of neutron-induced radioactivity and compact ion accelerators is anticipated.

  15. Detection of boron in simulated corrosion products by using a laser induced breakdown spectroscopy

    International Nuclear Information System (INIS)

    Song, K.; Yeon, J-W.; Jung, S-H.; Hwang, J.; Jung, E-C.

    2010-01-01

    In nuclear power plants, many methods for detection of coolant leakage have been developed and employed for the safe operation. However, these methods have many limitations for analyzing and dealing with the corrosion products due to the high radioactivity. LIBS (Laser-induced breakdown spectroscopy) offer a remote and on-site elemental analysis including the boron in the corrosion products with no sample preparation. In this study, we investigated the feasibility of detecting boron and analyzing an elemental composition of boron-containing iron oxides with the LIBS, in order to develop a coolant leakage detection system. First, we prepared five different boron-containing iron oxides and the element ratios were determined by using ICP-AES (inductive coupled plasma-atomic emission spectrometer). After this, the laser induced emission spectra of these iron oxides were obtained by using a 266 nm Nd:YAG laser. The B/Fe ratios of the oxides were determined by comparing the intensities of the B emission peak at 249.844 nm with those of the Fe peak at 250.217 nm as an internal reference. It was confirmed that the B contents in the oxides could be analyzed over 0.1 wt% by the laser induced breakdown spectroscopic technique. (author)

  16. Thermal conductivity of ultra-thin chemical vapor deposited hexagonal boron nitride films

    International Nuclear Information System (INIS)

    Alam, M. T.; Haque, M. A.; Bresnehan, M. S.; Robinson, J. A.

    2014-01-01

    Thermal conductivity of freestanding 10 nm and 20 nm thick chemical vapor deposited hexagonal boron nitride films was measured using both steady state and transient techniques. The measured value for both thicknesses, about 100 ± 10 W m −1 K −1 , is lower than the bulk basal plane value (390 W m −1 K −1 ) due to the imperfections in the specimen microstructure. Impressively, this value is still 100 times higher than conventional dielectrics. Considering scalability and ease of integration, hexagonal boron nitride grown over large area is an excellent candidate for thermal management in two dimensional materials-based nanoelectronics

  17. Chemical vapor deposition of hexagonal boron nitride films in the reduced pressure

    International Nuclear Information System (INIS)

    Choi, B.J.

    1999-01-01

    Hexagonal boron nitride (h-BN) films were deposited onto a graphite substrate in reduced pressure by reacting ammonia and boron tribromide at 800--1,200 C. The growth rate of h-BN films was dependent on the substrate temperature and the total pressures. The growth rate increased with increasing the substrate temperature at the pressure of 2 kPa, while it showed a maximum value at the pressures of 4 and 8 kPa. The temperature at which the maximum growth rate occurs decreased with increasing total pressure. With increasing the substrate temperature and total pressure, the apparent grain size increased and the surface morphology showed a rough, cauliflower-like structure

  18. Boron erosion and carbon deposition due to simultaneous bombardment with deuterium and carbon ions in plasmas

    International Nuclear Information System (INIS)

    Ohya, K.; Kawata, J.; Wienhold, P.; Karduck, P.; Rubel, M.; Seggern, J. von

    1999-01-01

    Erosion of boron out of a thin film exposed to deuterium edge plasmas and the simultaneous carbon deposition have been investigated in the tokamak TEXTOR-94 and simulated by means of a dynamic Monte Carlo code. The calculated results are compared with some observations (colorimetry, spectroscopy and AES) during and after the exposures. The implantation of carbon impurities strongly changes the effective boron sputtering yield of the film, which results into a lowering of the film erosion and a formation of thick carbon deposits. A strong decrease in the observed BII line emission around a surface location far from the plasma edge can be explained by a carbon deposition on the film. The calculated carbon depth profiles in the film, depending on the distance of the exposed surface from the plasma edge, are in reasonable agreement with measurements by AES after the exposures. Although simultaneous surface erosion and carbon deposition can be simulated, the calculated erosion rate is larger, by a factor of 2, than the observations by colorimetry at the early stage of the exposure

  19. Plasma deposition of cubic boron nitride films from non-toxic material at low temperatures

    International Nuclear Information System (INIS)

    Karim, M.Z.; Cameron, D.C.; Murphy, M.J.; Hashmi, M.S.J.

    1991-01-01

    Boron nitride has become the focus of a considerable amount of interest because of its properties which relate closely to those of carbon. In particular, the cubic nitride phase has extreme hardness and very high thermal conductivity similar to the properties of diamond. The conventional methods of synthesis use the highly toxic and inflammable gas diborane (B 2 H 6 ) as the reactant material. A study has been made of the deposition of thin films of boron nitride (BN) using non-toxic material by the plasma-assisted chemical vapour deposition technique. The source material was borane-ammonia (BH 3 -NH 3 ) which is a crystalline solid at room temperature with a high vapour pressure. The BH 3 -NH 3 vapour was decomposed in a 13.56 MHz nitrogen plasma coupled either inductively or capacitively with the system. The composition of the films was assessed by measuring their IR absorption when deposited on silicon and KBr substrates. The hexagonal (graphitic) and cubic (diamond-like) allotropes can be distinguished by their characteristic absorption bands which occur at 1365 and 780 cm -1 (hexagonal) and 1070 cm -1 (cubic). We have deposited BN films consisting of a mixture of hexagonal and cubic phases; the relative content of the cubic phase was found to be directly dependent on r.f. power and substrate bias. (orig.)

  20. Control of Crud and Boron Deposition for AOA Prevention

    International Nuclear Information System (INIS)

    Maeng, W. Y.; Choi, B. S.; Na, J. W.

    2010-07-01

    Ο Understand effects of water chemistry variables on AOA and investigate AOA mechanism Ο Mitigate AOA in terms of water chemistry control AOA(Axial Offset Anomaly) has been reported in many PWR plants in the world, including Korea, especially in the plants of higher burn-up and longer cycle operation or power up-rate. A test loop has been designed and made by KAERI, in order to investigate and mitigate AOA problems in Korea. This project included the study of hydrodynamic simulation and the modeling about AOA. The analysis of radioactive crud was performed to investigate of NPPs primary water chemical effect on AOA and to reduce the radioactive dose rate. The present primary water chemistry guideline of EPRI is to operate NPPs with AOA in the condition of initial 3.5 ppm Li and pH 7.1. However, the tests in this project indicate that the amount of deposit on fuel cladding can be reduced when an appropriate water chemistry strategy is applied. High pH water chemistry in the beginning of operation is recommended based on the results of this project

  1. The Study on Weldability of Boron Steel and Hot-Stamped Steel by Using Laser Heat Source (Ⅲ) - Comparison on Laser Weldability of Boron Steel and Hot -Stamped Steel-

    Energy Technology Data Exchange (ETDEWEB)

    Choi, So Young; Kim, Jong Do [Korea Maritime and Ocean University, Busan (Korea, Republic of); Kim, Jong Su [Korea Institute of Machinery and Materials, Daejeon (Korea, Republic of)

    2015-01-15

    This study was conducted to compare the laser weldability of boron steel and hot-stamped steel. In general, boron steel is used in the hot-stamping process. Hot-stamping is a method for simultaneously forming and cooling boron steel in a press die after heating it to the austenitizing temperature. Hot-stamped steel has a strength of 1500 MPa or more. Thus, in this study, the laser weldability of boron steel and that of hot-stamped steel were investigated and compared. A continuous wave disk laser was used to produce butt and lap joints. In the butt welding, the critical cooling speed at which full penetration was obtained in the hot-stamped steel was lower than that of boron steel. In the lap welding, the joint widths were similar regardless of the welding speed when full penetration was obtained.

  2. The Study on Weldability of Boron Steel and Hot-Stamped Steel by Using Laser Heat Source (Ⅲ) - Comparison on Laser Weldability of Boron Steel and Hot -Stamped Steel-

    International Nuclear Information System (INIS)

    Choi, So Young; Kim, Jong Do; Kim, Jong Su

    2015-01-01

    This study was conducted to compare the laser weldability of boron steel and hot-stamped steel. In general, boron steel is used in the hot-stamping process. Hot-stamping is a method for simultaneously forming and cooling boron steel in a press die after heating it to the austenitizing temperature. Hot-stamped steel has a strength of 1500 MPa or more. Thus, in this study, the laser weldability of boron steel and that of hot-stamped steel were investigated and compared. A continuous wave disk laser was used to produce butt and lap joints. In the butt welding, the critical cooling speed at which full penetration was obtained in the hot-stamped steel was lower than that of boron steel. In the lap welding, the joint widths were similar regardless of the welding speed when full penetration was obtained

  3. The thermodynamic approach to boron chemical vapour deposition based on a computer minimization of the total Gibbs free energy

    International Nuclear Information System (INIS)

    Naslain, R.; Thebault, J.; Hagenmuller, P.; Bernard, C.

    1979-01-01

    A thermodynamic approach based on the minimization of the total Gibbs free energy of the system is used to study the chemical vapour deposition (CVD) of boron from BCl 3 -H 2 or BBr 3 -H 2 mixtures on various types of substrates (at 1000 < T< 1900 K and 1 atm). In this approach it is assumed that states close to equilibrium are reached in the boron CVD apparatus. (Auth.)

  4. Study on the Microstructure and Electrical Properties of Boron and Sulfur Codoped Diamond Films Deposited Using Chemical Vapor Deposition

    Directory of Open Access Journals (Sweden)

    Zhang Jing

    2014-01-01

    Full Text Available The atomic-scale microstructure and electron emission properties of boron and sulfur (denoted as B-S codoped diamond films grown on high-temperature and high-pressure (HTHP diamond and Si substrates were investigated using atom force microscopy (AFM, scanning tunneling microscopy (STM, secondary ion mass spectroscopy (SIMS, and current imaging tunneling spectroscopy (CITS measurement techniques. The films grown on Si consisted of large grains with secondary nucleation, whereas those on HTHP diamond are composed of well-developed polycrystalline facets with an average size of 10–50 nm. SIMS analyses confirmed that sulfur was successfully introduced into diamond films, and a small amount of boron facilitated sulfur incorporation into diamond. Large tunneling currents were observed at some grain boundaries, and the emission character was better at the grain boundaries than that at the center of the crystal. The films grown on HTHP diamond substrates were much more perfect with higher quality than the films deposited on Si substrates. The local I-V characteristics for films deposited on Si or HTHP diamond substrates indicate n-type conduction.

  5. The effect of excimer laser pretreatment on diffusion and activation of boron implanted in silicon

    International Nuclear Information System (INIS)

    Monakhov, E.V.; Svensson, B.G.; Linnarsson, M.K.; La Magna, A.; Italia, M.; Privitera, V.; Fortunato, G.; Cuscuna, M.; Mariucci, L.

    2005-01-01

    We have investigated the effect of excimer laser annealing (ELA) on transient enhanced diffusion (TED) and activation of boron implanted in Si during subsequent rapid thermal annealing (RTA). It is observed that ELA with partial melting of the implanted region causes reduction of TED in the region that remains solid during ELA, where the diffusion length of boron is reduced by a factor of ∼4 as compared to the as-implanted sample. This is attributed to several mechanisms such as liquid-state annealing of a fraction of the implantation induced defects, introduction of excess vacancies during ELA, and solid-state annealing of the defects beyond the maximum melting depth by the heat wave propagating into the Si wafer. The ELA pretreatment provides a substantially improved electrical activation of boron during subsequent RTA

  6. Evaluation of plasma disruption simulating short pulse laser irradiation experiments on boronated graphites and CFCs [carbon fibre composites

    International Nuclear Information System (INIS)

    Stad, R.C.L. van der; Klippel, H.T.; Kraaij, G.J.

    1992-12-01

    New experimental and numerical results from disruption heat flux simulations in the millisecond range with laser beams are discussed. For a number of graphites, boronated graphites and carbon fibre composites, the effective enthalpy of ablation is determined as 30 ± 3 MJ/kg, using laser pulses of about -.3 ms. The numerical results predict the experimental results rather well. No effect of boron doping on the ablation enthalpy is found. (author). 9 refs., 4 figs., 1 tab

  7. 25 years of pulsed laser deposition

    Science.gov (United States)

    Lorenz, Michael; Ramachandra Rao, M. S.

    2014-01-01

    It is our pleasure to introduce this special issue appearing on the occasion of the 25th anniversary of pulsed laser deposition (PLD), which is today one of the most versatile growth techniques for oxide thin films and nanostructures. Ever since its invention, PLD has revolutionized the research on advanced functional oxides due to its ability to yield high-quality thin films, multilayers and heterostructures of a variety of multi-element material systems with rather simple technical means. We appreciate that the use of lasers to deposit films via ablation (now termed PLD) has been known since the 1960s after the invention of the first ruby laser. However, in the first two decades, PLD was something of a 'sleeping beauty' with only a few publications per year, as shown below. This state of hibernation ended abruptly with the advent of high T c superconductor research when scientists needed to grow high-quality thin films of multi-component high T c oxide systems. When most of the conventional growth techniques failed, the invention of PLD by T (Venky) Venkatesan clearly demonstrated that the newly discovered high-T c superconductor, YBa2Cu3O7-δ , could be stoichiometrically deposited as a high-quality nm-thin film with PLD [1]. As a remarkable highlight of this special issue, Venkatesan gives us his very personal reminiscence on these particularly innovative years of PLD beginning in 1986 [2]. After Venky's first paper [1], the importance of this invention was realized worldwide and the number of publications on PLD increased exponentially, as shown in figure 1. Figure 1. Figure 1. Published items per year with title or topic PLD. Data from Thomson Reuters Web of Knowledge in September 2013. After publication of Venky's famous paper in 1987 [1], the story of PLD's success began with a sudden jump in the number of publications, about 25 years ago. A first PLD textbook covering its basic understanding was soon published, in 1994, by Chrisey and Hubler [3]. Within a

  8. FTIR and electrical characterization of a-Si:H layers deposited by PECVD at different boron ratios

    Energy Technology Data Exchange (ETDEWEB)

    Orduna-Diaz, A., E-mail: abdu@susu.inaoep.mx [Instituto Nacional de Astrofisica, Optica y Electronica, Luis Enrique Erro No. 1, Tonantzintla, Puebla 72840 (Mexico); Trevino-Palacios, C.G. [Instituto Nacional de Astrofisica, Optica y Electronica, Luis Enrique Erro No. 1, Tonantzintla, Puebla 72840 (Mexico); Rojas-Lopez, M.; Delgado-Macuil, R.; Gayou, V.L. [Centro de Investigacion en Biotecnologia Aplicada (CIBA), IPN, Tlaxcala, Tlax. 72197 (Mexico); Torres-Jacome, A. [Instituto Nacional de Astrofisica, Optica y Electronica, Luis Enrique Erro No. 1, Tonantzintla, Puebla 72840 (Mexico)

    2010-10-25

    Hydrogenated amorphous silicon (a-Si:H) has found applications in flat panel displays, photovoltaic solar cell and recently has been employed in boron doped microbolometer array. We have performed electrical and structural characterizations of a-Si:H layers prepared by plasma enhanced chemical vapor deposition (PECVD) method at 540 K on glass substrates at different diborane (B{sub 2}H{sub 6}) flow ratios (500, 250, 150 and 50 sccm). Fourier transform infrared spectroscopy (FTIR) measurements obtained by specular reflectance sampling mode, show Si-Si, B-O, Si-H, and Si-O vibrational modes (611, 1300, 2100 and 1100 cm{sup -1} respectively) with different strengths which are associated to hydrogen and boron content. The current-voltage curves show that at 250 sccm flow of boron the material shows the lowest resistivity, but for the 150 sccm boron flow it is obtained the highest temperature coefficient of resistance (TCR).

  9. Reduced-pressure chemical vapor deposition of boron-doped Si and Ge layers

    International Nuclear Information System (INIS)

    Bogumilowicz, Y.; Hartmann, J.M.

    2014-01-01

    We have studied the in-situ boron (B) doping of germanium (Ge) and silicon (Si) in Reduced Pressure-Chemical Vapor Deposition. Three growth temperatures have been investigated for the B-doping of Ge: 400, 600 and 750 °C at a constant growth pressure of 13300 Pa (i.e. 100 Torr). The B concentration in the Ge:B epilayer increases linearly with the diborane concentration in the gaseous phase. Single-crystalline Ge:B layers with B concentrations in-between 9 ∙ 10 17 and 1 ∙ 10 20 cm −3 were achieved. For the in-situ B doping of Si at 850 °C, two dichlorosilane mass flow ratios (MFR) have been assessed: F[SiH 2 Cl 2 ]/F[H 2 ] = 0.0025 and F[SiH 2 Cl 2 ]/F[H 2 ] = 0.0113 at a growth pressure of 2660 Pa (i.e. 20 Torr). Linear boron incorporation with the diborane concentration in the gas phase has been observed and doping levels in-between 3.5 ∙ 10 17 and 1 ∙ 10 20 cm −3 were achieved. We almost kept the same ratio of B versus Si atoms in the gas phase and in the Si epilayer. By contrast, roughly half of the B atoms present in the gas phase were incorporated in the Ge:B layers irrespective of the growth temperature. X-Ray Diffraction (XRD) allowed us to extract from the angular position of the Ge:B layer diffraction peak the substitutional B concentration. Values close to the B concentrations obtained by 4-probe resistivity measurements were obtained. Ge:B layers were smooth (< 1 m root mean square roughness associated with 20 × 20 μm 2 Atomic Force Microscopy images). Only for high F[B 2 H 6 ]/F[GeH 4 ] MFR (3.2 10 −3 ) did the Ge:B layers became rough; they were however still mono-crystalline (XRD). Above this MFR value, Ge:B layers became polycrystalline. - Highlights: • Boron doping of germanium and silicon in Reduced Pressure-Chemical Vapor Deposition • Linear boron incorporation in Ge:B and Si:B with the diborane flow • Single-crystal Ge:B layers with B concentrations in-between 9 ∙ 10 17 and 1 ∙ 10 20 cm −3 • Single-crystal Si

  10. Thermal expansion measurements on boron carbide and europium sesquioxide by laser interferometry

    International Nuclear Information System (INIS)

    Preston, S.D.

    1980-01-01

    A laser interferometer technique for measuring the absolute linear thermal expansion of small annular specimens is described. Results are presented for unirradiated boron carbide (B 4 C) and europia (Eu 2 O 3 ) up to 1000 0 C. Both compounds are neutron-absorbing materials of potential use in fast-reactor control rods and data on their thermophysical properties, in particular linear thermal expansion, are essential to the control rod designers. (author)

  11. Electrophoretic deposits of boron on duralumin plates used for measuring neutron flux; Depots electrophoretiques de bore sur plaques de duralumin destines a des mesures de flux de neutrons

    Energy Technology Data Exchange (ETDEWEB)

    Lang, F M; Magnier, P; Finck, C [Commissariat a l' Energie Atomique, Saclay (France). Centre d' Etudes Nucleaires

    1956-07-01

    Preparation of boron thin film deposits of around 1 mg per cm{sup 2} on duralumin plates with a diameter of 8 cm. The boron coated plates for ionization chambers were originally prepared at the CEA by pulverization of boron carbides on sodium silicates. This method is not controlling precisely enough the quantity of boron deposit. Thus, an electrophoretic method is considered for a better control of the quantity of boron deposit in the scope of using in the future boron 10 which is costly and rare. The method described by O. Flint is not satisfying enough and a similar electrophoretic process has been developed. Full description of the method is given as well as explanation of the use of dried methanol as solvent, tannin as electrolyte and magnesium chloride to avoid alumina formation. (M.P.)

  12. Pulsed laser deposition in Twente: from research tool towards industrial deposition

    NARCIS (Netherlands)

    Blank, David H.A.; Dekkers, Jan M.; Rijnders, Augustinus J.H.M.

    2014-01-01

    After the discovery of the perovskite high Tc superconductors in 1986, a rare and almost unknown deposition technique attracted attention. Pulsed laser deposition (PLD), or laser ablation as it was called in the beginning, became popular because of the possibility to deposit complex materials, like

  13. 2.4. The kinetics of hydrochloric-acid decomposition of calcined concentrate of boron raw material of Ak-Arkhar Deposit

    International Nuclear Information System (INIS)

    Mirsaidov, U.M.; Kurbonov, A.S.; Mamatov, E.D.

    2015-01-01

    Present article is devoted to kinetics of hydrochloric-acid decomposition of calcined concentrate of boron raw material of Ak-Arkhar Deposit. The experimental data of dependence of hydrochloric-acid decomposition of calcined boron raw material for boron oxide extraction on temperature (20-80 deg C) and process duration (15-60 min) were considered. It was defined that at temperature increasing the boron oxide extraction from borosilicate raw material increases from 24.1 till 86.8%. The constants of decomposition rate of boron raw material were calculated.

  14. Influence of laser power on atom probe tomographic analysis of boron distribution in silicon

    Energy Technology Data Exchange (ETDEWEB)

    Tu, Y., E-mail: ytu@imr.tohoku.ac.jp [The Oarai Center, Institute for Materials Research, Tohoku University, Oarai, Ibaraki 311-1313 (Japan); Takamizawa, H.; Han, B.; Shimizu, Y.; Inoue, K.; Toyama, T. [The Oarai Center, Institute for Materials Research, Tohoku University, Oarai, Ibaraki 311-1313 (Japan); Yano, F. [The Oarai Center, Institute for Materials Research, Tohoku University, Oarai, Ibaraki 311-1313 (Japan); Tokyo City University, Setagaya, Tokyo 158-8557 (Japan); Nishida, A. [Renesas Electronics Corporation, Hitachinaka, Ibaraki 312-8504 (Japan); Nagai, Y. [The Oarai Center, Institute for Materials Research, Tohoku University, Oarai, Ibaraki 311-1313 (Japan)

    2017-02-15

    The relationship between the laser power and the three-dimensional distribution of boron (B) in silicon (Si) measured by laser-assisted atom probe tomography (APT) is investigated. The ultraviolet laser employed in this study has a fixed wavelength of 355 nm. The measured distributions are almost uniform and homogeneous when using low laser power, while clear B accumulation at the low-index pole of single-crystalline Si and segregation along the grain boundaries in polycrystalline Si are observed when using high laser power (100 pJ). These effects are thought to be caused by the surface migration of atoms, which is promoted by high laser power. Therefore, for ensuring a high-fidelity APT measurement of the B distribution in Si, high laser power is not recommended. - Highlights: • Influence of laser power on atom probe tomographic analysis of B distribution in Si is investigated. • When using high laser power, inhomogeneous distributions of B in single-crystalline and polycrystalline Si are observed. • Laser promoted migration of B atoms over the specimen is proposed to explain these effects.

  15. Modelling of capillary Z-pinch recombination pumping of boron extreme ultraviolet laser

    Czech Academy of Sciences Publication Activity Database

    Vrba, Pavel; Bobrova, N. A.; Sasorov, P. V.; Vrbová, M.; Hübner, Jakub

    2009-01-01

    Roč. 16, č. 7 (2009), 073105 1-073105 11 ISSN 1070-664X R&D Projects: GA ČR GA102/07/0275 Institutional research plan: CEZ:AV0Z20430508 Keywords : Boron * capillary * discharges (electric * laser ablation * optical pumping * plasma heating by laser * plasma kinetic theory * plasma magnetohydrodynamics * Z pinch Subject RIV: BL - Plasma and Gas Discharge Physics Impact factor: 2.475, year: 2009 http://link.aip.org/link/? PHP /16/073105

  16. Increased charge storage capacity of titanium nitride electrodes by deposition of boron-doped nanocrystalline diamond films

    DEFF Research Database (Denmark)

    Meijs, Suzan; McDonald, Matthew; Sørensen, Søren

    2015-01-01

    The aim of this study was to investigate the feasibility of depositing a thin layer of boron-doped nanocrystalline diamond (B-NCD) on titanium nitride (TiN) coated electrodes and the effect this has on charge injection properties. The charge storage capacity increased by applying the B-NCD film...

  17. CTS and CZTS for solar cells made by pulsed laser deposition and pulsed electron deposition

    DEFF Research Database (Denmark)

    Ettlinger, Rebecca Bolt

    This thesis concerns the deposition of thin films for solar cells using pulsed laser deposition (PLD) and pulsed electron deposition (PED). The aim was to deposit copper tin sulfide (CTS) and zinc sulfide (ZnS) by pulsed laser deposition to learn about these materials in relation to copper zinc tin...... time. We compared the results of CZTS deposition by PLD at DTU in Denmark to CZTS made by PED at IMEM-CNR, where CIGS solar cells have successfully been fabricated at very low processing temperatures. The main results of this work were as follows: Monoclinic-phase CTS films were made by pulsed laser...... deposition followed by high temperature annealing. The films were used to understand the double band gap that we and other groups observed in the material. The Cu-content of the CTS films varied depending on the laser fluence (the laser energy per pulse and per area). The material transfer from...

  18. Stabilizing laser energy density on a target during pulsed laser deposition of thin films

    Science.gov (United States)

    Dowden, Paul C.; Jia, Quanxi

    2016-05-31

    A process for stabilizing laser energy density on a target surface during pulsed laser deposition of thin films controls the focused laser spot on the target. The process involves imaging an image-aperture positioned in the beamline. This eliminates changes in the beam dimensions of the laser. A continuously variable attenuator located in between the output of the laser and the imaged image-aperture adjusts the energy to a desired level by running the laser in a "constant voltage" mode. The process provides reproducibility and controllability for deposition of electronic thin films by pulsed laser deposition.

  19. Electrochemical and morphological characterization of gold nanoparticles deposited on boron-doped diamond electrode

    Energy Technology Data Exchange (ETDEWEB)

    Limat, Meriadec; El Roustom, Bahaa [Ecole Polytechnique Federale de Lausanne (EPFL), Institute of Chemical Sciences and Engineering, CH-1015 Lausanne (Switzerland); Jotterand, Henri [Ecole Polytechnique Federale de Lausanne (EPFL), Institute of Physics of the Complex Matter, CH-1015 Lausanne (Switzerland); Foti, Gyoergy [Ecole Polytechnique Federale de Lausanne (EPFL), Institute of Chemical Sciences and Engineering, CH-1015 Lausanne (Switzerland)], E-mail: gyorgy.foti@epfl.ch; Comninellis, Christos [Ecole Polytechnique Federale de Lausanne (EPFL), Institute of Chemical Sciences and Engineering, CH-1015 Lausanne (Switzerland)

    2009-03-30

    A novel two-step method was employed to synthesize gold nanoparticles dispersed on boron-doped diamond (BDD) electrode. It consisted of sputter deposition at ambient temperature of maximum 15 equivalent monolayers of gold, followed by a heat treatment in air at 600 deg. C. Gold nanoparticles with an average diameter between 7 and 30 nm could be prepared by this method on polycrystalline BDD film electrode. The obtained Au/BDD composite electrode appeared stable under conditions of electrochemical characterization performed using ferri-/ferrocyanide and benzoquinone/hydroquinone redox couples in acidic medium. The electrochemical behavior of Au/BDD was compared to that of bulk Au and BDD electrodes. Finally, the Au/BDD composite electrode was regarded as an array of Au microelectrodes dispersed on BDD substrate.

  20. Electrochemical and morphological characterization of gold nanoparticles deposited on boron-doped diamond electrode

    International Nuclear Information System (INIS)

    Limat, Meriadec; El Roustom, Bahaa; Jotterand, Henri; Foti, Gyoergy; Comninellis, Christos

    2009-01-01

    A novel two-step method was employed to synthesize gold nanoparticles dispersed on boron-doped diamond (BDD) electrode. It consisted of sputter deposition at ambient temperature of maximum 15 equivalent monolayers of gold, followed by a heat treatment in air at 600 deg. C. Gold nanoparticles with an average diameter between 7 and 30 nm could be prepared by this method on polycrystalline BDD film electrode. The obtained Au/BDD composite electrode appeared stable under conditions of electrochemical characterization performed using ferri-/ferrocyanide and benzoquinone/hydroquinone redox couples in acidic medium. The electrochemical behavior of Au/BDD was compared to that of bulk Au and BDD electrodes. Finally, the Au/BDD composite electrode was regarded as an array of Au microelectrodes dispersed on BDD substrate

  1. Electrophoretic deposition of hydroxyapatite-hexagonal boron nitride composite coatings on Ti substrate.

    Science.gov (United States)

    Göncü, Yapıncak; Geçgin, Merve; Bakan, Feray; Ay, Nuran

    2017-10-01

    In this study, commercial pure titanium samples were coated with nano hydroxyapatite-nano hexagonal boron nitride (nano HA-nano hBN) composite by electrophoretic deposition (EPD). The effect of process parameters (applied voltage, deposition time and solid concentration) on the coating morphology, thickness and the adhesion behavior were studied systematically and crack free nano hBN-nano HA composite coating production was achieved for developing bioactive coatings on titanium substrates for orthopedic applications. For the examination of structural and morphological characteristics of the coating surfaces, various complementary analysis methods were performed. For the structural characterization, XRD and Raman Spectroscopy were used while, Scanning Electron Microscopy (SEM) equipped with an energy dispersive spectrometer (EDS) and Transmission Electron Microscopy (TEM) techniques were carried out for revealing the morphological characterization. The results showed that nano HA-nano hBN were successfully deposited on Ti surface with uniform, crack-free coating by EPD. The amounts of hBN in suspension are considered to have no effect on coating thickness. By adding hBN into HA, the morphology of HA did not change and hBN has no significant effect on porous structure. These nanostructured surfaces are expected to be suitable for proliferation of cells and have high potential for bioactive materials. Copyright © 2017 Elsevier B.V. All rights reserved.

  2. Chemical and boron isotopic composition of tourmaline from the Mariinsky emerald deposit, Central Urals, Russia

    Science.gov (United States)

    Baksheev, Ivan A.; Trumbull, Robert B.; Popov, Mikhail P.; Erokhin, Yuri V.; Kudryavtseva, Olesya E.; Yapaskurt, Vasily O.; Khiller, Vera V.; Vovna, Galina M.; Kiselev, Vladimir I.

    2018-04-01

    Tourmaline is abundant at the Mariinsky schist-hosted emerald deposit in the Central Urals, Russia, both in emerald-bearing phlogopite veins (type 1) and later, emerald-free pockets, lenses, and veinlets cutting the phlogopite veins (type 2). The Ca content in tourmaline is influenced by the host rocks (ultramafic and mafic rocks), associated minerals, and minerals crystallized before tourmaline (amphibole, fluorite, margarite). The Na concentration in tourmaline depends on the presence or absence of paragonite, and the association with micas also strongly influences the contents of Li, Zn, Ni, and Co in tourmaline. Type 1 tourmalines associated with phlogopite are relatively depleted in these elements, whereas type 2 tourmalines associated with margarite or paragonite are enriched. Some differences in isomorphic substitutions along with the trace element composition (Zn, V, Sr, Co, REE) may have value in exploration of emerald-bearing and emerald-free veins in schist-hosted emerald deposits. The δ11B values in tourmaline of all types fall in a narrow total range from -11.3 to -8.4‰. These values, combined with a mineralization temperature of 420-360 °C, yield an estimated δ11B fluid composition of -7.4 to -6.8‰ suggesting a mixed source of boron, likely dominated from the granitic rocks surrounding the emerald belt. The narrow range of B-isotope compositions in tourmaline from throughout the Mariinsky deposit suggests a well-mixed hydrothermal system.

  3. Fusion energy using avalanche increased boron reactions for block-ignition by ultrahigh power picosecond laser pulses

    Czech Academy of Sciences Publication Activity Database

    Hora, H.; Korn, Georg; Giuffrida, Lorenzo; Margarone, Daniele; Picciotto, A.; Krása, Josef; Jungwirth, Karel; Ullschmied, Jiří; Lalousis, P.; Eliezer, S.; Miley, G. H.; Moustaizis, S.; Mourou, G.

    2015-01-01

    Roč. 33, č. 4 (2015), s. 607-619 ISSN 0263-0346 Institutional support: RVO:68378271 ; RVO:61389021 Keywords : fusion energy without radiation problem * boron fusion by lasers * non-linear force-driven block ignition Subject RIV: BL - Plasma and Gas Discharge Physics; BH - Optics, Masers, Lasers (UFP-V) Impact factor: 1.649, year: 2015

  4. Boron distribution in silicon after multiple pulse excimer laser annealing

    International Nuclear Information System (INIS)

    Monakhov, E.V.; Svensson, B.G.; Linnarsson, M.K.; La Magna, A.; Italia, M.; Privitera, V.; Fortunato, G.; Cuscuna, M.; Mariucci, L.

    2005-01-01

    We have studied B redistribution in Si after excimer laser annealing (ELA) with multiple laser pulses. B was implanted with energies of 1 and 10 keV and doses of 1x10 14 and 1x10 15 cm -2 . ELA with the number of pulses from 1 to 100 was performed at room temperature and 450 deg. C in vacuum. Irrespective of the implantation parameters and the ELA conditions used, a pile-up in the B concentration is observed near the maximum melting depth after ten pulses of ELA. Moreover, a detailed study has revealed that B accumulates at the maximum melt depth gradually with the number of ELA pulses. Besides, an increase in the carrier concentration is observed at the maximum melt depth, suggesting electrical activity of the accumulated B. Formation of Si-B complexes and vacancy accumulation during multiple ELA are discussed as possible mechanisms for the B build-up

  5. Spectroscopic monitoring of metallic bonding in laser metal deposition

    NARCIS (Netherlands)

    Ya, Wei; Konuk, A.R.; Aarts, Ronald G.K.M.; Pathiraj, B.; Huis in 't Veld, Bert

    2015-01-01

    A new approach is presented in this paper to link optical emission spectrum analysis to the quality of clad layers produced with laser metal deposition (LMD). A Nd:YAG laser (λ = 1.064 μm) was used to produce clad tracks with Metco 42C powder on AISI 4140 steel substrate. The laser power was ramped

  6. Boron isotope evidence for the involvement of non-marine evaporites in the origin of the Broken Hill ore deposits

    Science.gov (United States)

    Slack, J.F.; Palmer, M.R.; Stevens, B.P.J.

    1989-01-01

    IDENTIFYING the palaeogeographic setting and mode of origin of stratabound ore deposits can be difficult in high-grade metamorphic terranes, where the effects of metamorphism may obscure the nature of the protoliths. Here we report boron isotope data for tourmalines from the early Proterozoic Broken Hill block, in Australia, which hosts giant lead-zinc-silver sulphide deposits. With one exception the 11B/10B ratios are lower than those for all other tourmalines from massive sulphide deposits and tour-malinites elsewhere in the world. We propose that these low ratios reflect leaching of boron from non-marine evaporitic borates by convecting hydrothermal fluids associated with early Proterozoic continental rifting. A possible modern analogue is the Salton Sea geothermal field in California. ?? 1989 Nature Publishing Group.

  7. Influence of laser power on microstructure of laser metal deposited 17-4 ph stainless steel

    CSIR Research Space (South Africa)

    Adeyemi, AA

    2017-09-01

    Full Text Available The influence of laser power on the microstructure of 17-4 PH stainless steel produced by laser metal deposition was investigated. Multiple-trackof 17-4 stainless steel powder was deposited on 316 stainless steel substrate using laser metal...

  8. Femtosecond and nanosecond pulsed laser deposition of silicon and germanium

    Energy Technology Data Exchange (ETDEWEB)

    Reenaas, Turid Worren [Department of Physics, Norwegian University of Science and Technology, 7491 Trondheim (Norway); Lee, Yen Sian [Department of Mechanical Engineering, Faculty of Engineering, University of Malaya, 50603 Kuala Lumpur (Malaysia); Department of Physics, Faculty of Science, University of Malaya, 50603 Kuala Lumpur (Malaysia); Chowdhury, Fatema Rezwana; Gupta, Manisha; Tsui, Ying Yin [Department of Electrical and Computer Engineering, University of Alberta (Canada); Tou, Teck Yong [Faculty of Engineering, Multimedia University, 63100 Cyberjaya, Selangor (Malaysia); Yap, Seong Ling [Department of Physics, Faculty of Science, University of Malaya, 50603 Kuala Lumpur (Malaysia); Kok, Soon Yie [Faculty of Engineering, Multimedia University, 63100 Cyberjaya, Selangor (Malaysia); Yap, Seong Shan, E-mail: seongshan@gmail.com [Department of Mechanical Engineering, Faculty of Engineering, University of Malaya, 50603 Kuala Lumpur (Malaysia)

    2015-11-01

    Highlights: • Ge and Si were deposited by fs and ns laser at room temperature and at vacuum. • Ion of 10{sup 4} ms{sup −1} and 30–200 eV was obtained for ns ablation for Ge and Si. • Highly energetic ions of 10{sup 5} ms{sup −1} with 2–7 KeV were produced in fs laser ablation. • Nanocrystalline Si and Ge were deposited by using fs laser. • Nanoparticles < 10 nm haven been obtained by fs laser. - Abstract: 150 fs Ti:Sapphire laser pulsed laser deposition of Si and Ge were compared to a nanosecond KrF laser (25 ns). The ablation thresholds for ns lasers were about 2.5 J cm{sup −2} for Si and 2.1 J cm{sup −2} for Ge. The values were about 5–10 times lower when fs laser were used. The power densities were 10{sup 8}–10{sup 9} W cm{sup −2} for ns but 10{sup 12} W cm{sup −2} for fs. By using an ion probe, the ions emission at different fluence were measured where the emitting ions achieving the velocity in the range of 7–40 km s{sup −1} and kinetic energy in the range of 30–200 eV for ns laser. The ion produced by fs laser was measured to be highly energetic, 90–200 km s{sup −1}, 2–10 KeV. Two ion peaks were detected above specific laser fluence for both ns and fs laser ablation. Under fs laser ablation, the films were dominated by nano-sized crystalline particles, drastically different from nanosecond pulsed laser deposition where amorphous films were obtained. The ions characteristics and effects of pulse length on the properties of the deposited films were discussed.

  9. Deposition of boron doped DLC films on TiNb and characterization of their mechanical properties and blood compatibility.

    Science.gov (United States)

    Liza, Shahira; Hieda, Junko; Akasaka, Hiroki; Ohtake, Naoto; Tsutsumi, Yusuke; Nagai, Akiko; Hanawa, Takao

    2017-01-01

    Diamond-like carbon (DLC) material is used in blood contacting devices as the surface coating material because of the antithrombogenicity behavior which helps to inhibit platelet adhesion and activation. In this study, DLC films were doped with boron during pulsed plasma chemical vapor deposition (CVD) to improve the blood compatibility. The ratio of boron to carbon (B/C) was varied from 0 to 0.4 in the film by adjusting the flow rate of trimethylboron and acetylene. Tribological tests indicated that boron doping with a low B/C ratio of 0.03 is beneficial for reducing friction (μ = 0.1), lowering hardness and slightly increasing wear rate compared to undoped DLC films. The B/C ratio in the film of 0.03 and 0.4 exhibited highly hydrophilic surface owing to their high wettability and high surface energy. An in vitro platelet adhesion experiment was conducted to compare the blood compatibility of TiNb substrates before and after coating with undoped and boron doped DLC. Films with highly hydrophilic surface enhanced the blood compatibility of TiNb, and the best results were obtained for DLC with the B/C ratio of 0.03. Boron doped DLC films are promising surface coatings for blood contacting devices.

  10. Evaluation of freestanding boron-doped diamond grown by chemical vapour deposition as substrates for vertical power electronic devices

    Energy Technology Data Exchange (ETDEWEB)

    Issaoui, R.; Achard, J.; Tallaire, A.; Silva, F.; Gicquel, A. [LSPM-CNRS (formerly LIMHP), Universite Paris 13, 99, Avenue Jean-Baptiste Clement, 93430 Villetaneuse (France); Bisaro, R.; Servet, B.; Garry, G. [Thales Research and Technology France, Campus de Polytechnique, 1 Avenue Augustin Fresnel, F-91767 Palaiseau Cedex (France); Barjon, J. [GEMaC-CNRS, Universite de Versailles Saint Quentin Batiment Fermat, 45 Avenue des Etats-Unis, 78035 Versailles Cedex (France)

    2012-03-19

    In this study, 4 x 4 mm{sup 2} freestanding boron-doped diamond single crystals with thickness up to 260 {mu}m have been fabricated by plasma assisted chemical vapour deposition. The boron concentrations measured by secondary ion mass spectroscopy were 10{sup 18} to 10{sup 20} cm{sup -3} which is in a good agreement with the values calculated from Fourier transform infrared spectroscopy analysis, thus indicating that almost all incorporated boron is electrically active. The dependence of lattice parameters and crystal mosaicity on boron concentrations have also been extracted from high resolution x-ray diffraction experiments on (004) planes. The widths of x-ray rocking curves have globally shown the high quality of the material despite a substantial broadening of the peak, indicating a decrease of structural quality with increasing boron doping levels. Finally, the suitability of these crystals for the development of vertical power electronic devices has been confirmed by four-point probe measurements from which electrical resistivities as low as 0.26 {Omega} cm have been obtained.

  11. Lipase biofilm deposited by Matrix Assisted Pulsed Laser Evaporation technique

    International Nuclear Information System (INIS)

    Aronne, Antonio; Bloisi, Francesco; Calabria, Raffaela; Califano, Valeria; Depero, Laura E.; Fanelli, Esther; Federici, Stefania; Massoli, Patrizio; Vicari, Luciano R.M.

    2015-01-01

    Highlights: • A lipase film was deposited with Matrix Assisted Pulsed Laser Evaporation technique. • FTIR spectra show that laser irradiation do not damage lipase molecule. • Laser fluence controls the characteristics of complex structure generated by MAPLE. - Abstract: Lipase is an enzyme that finds application in biodiesel production and for detection of esters and triglycerides in biosensors. Matrix Assisted Pulsed Laser Evaporation (MAPLE), a technique derived from Pulsed Laser Deposition (PLD) for deposition of undamaged biomolecules or polymers, is characterized by the use of a frozen target obtained from a solution/suspension of the guest material (to be deposited) in a volatile matrix (solvent). The presence of the solvent avoids or at least reduces the potential damage of guest molecules by laser radiation but only the guest material reaches the substrate in an essentially solvent-free deposition. MAPLE can be used for enzymes immobilization, essential for industrial application, allowing the development of continuous processes, an easier separation of products, the reuse of the catalyst and, in some cases, enhancing enzyme properties (pH, temperature stability, etc.) and catalytic activity in non-aqueous media. Here we show that MAPLE technique can be used to deposit undamaged lipase and that the complex structure (due to droplets generated during extraction from target) of the deposited material can be controlled by changing the laser beam fluence

  12. Lipase biofilm deposited by Matrix Assisted Pulsed Laser Evaporation technique

    Energy Technology Data Exchange (ETDEWEB)

    Aronne, Antonio [Department of Chemical Engineering, Materials and Industrial Production, University of Naples “Federico II”, Napoli (Italy); Bloisi, Francesco, E-mail: bloisi@na.infn.it [SPIN – CNR, Naples (Italy); Department of Physics, University of Naples “Federico II”, Napoli (Italy); Calabria, Raffaela; Califano, Valeria [Istituto Motori – CNR, Naples (Italy); Depero, Laura E. [Department of Mechanical and Industrial Engineering, University of Brescia, Brescia (Italy); Fanelli, Esther [Department of Chemical Engineering, Materials and Industrial Production, University of Naples “Federico II”, Napoli (Italy); Federici, Stefania [Department of Mechanical and Industrial Engineering, University of Brescia, Brescia (Italy); Massoli, Patrizio [Istituto Motori – CNR, Naples (Italy); Vicari, Luciano R.M. [SPIN – CNR, Naples (Italy); Department of Physics, University of Naples “Federico II”, Napoli (Italy)

    2015-05-01

    Highlights: • A lipase film was deposited with Matrix Assisted Pulsed Laser Evaporation technique. • FTIR spectra show that laser irradiation do not damage lipase molecule. • Laser fluence controls the characteristics of complex structure generated by MAPLE. - Abstract: Lipase is an enzyme that finds application in biodiesel production and for detection of esters and triglycerides in biosensors. Matrix Assisted Pulsed Laser Evaporation (MAPLE), a technique derived from Pulsed Laser Deposition (PLD) for deposition of undamaged biomolecules or polymers, is characterized by the use of a frozen target obtained from a solution/suspension of the guest material (to be deposited) in a volatile matrix (solvent). The presence of the solvent avoids or at least reduces the potential damage of guest molecules by laser radiation but only the guest material reaches the substrate in an essentially solvent-free deposition. MAPLE can be used for enzymes immobilization, essential for industrial application, allowing the development of continuous processes, an easier separation of products, the reuse of the catalyst and, in some cases, enhancing enzyme properties (pH, temperature stability, etc.) and catalytic activity in non-aqueous media. Here we show that MAPLE technique can be used to deposit undamaged lipase and that the complex structure (due to droplets generated during extraction from target) of the deposited material can be controlled by changing the laser beam fluence.

  13. Laser-excited photoemission spectroscopy study of superconducting boron-doped diamond

    Directory of Open Access Journals (Sweden)

    K. Ishizaka, R. Eguchi, S. Tsuda, T. Kiss, T. Shimojima, T. Yokoya, S. Shin, T. Togashi, S. Watanabe, C.-T. Chen, C.Q. Zhang, Y. Takano, M. Nagao, I. Sakaguchi, T. Takenouchi and H. Kawarada

    2006-01-01

    Full Text Available We have investigated the low-energy electronic state of boron-doped diamond thin film by the laser-excited photoemission spectroscopy. A clear Fermi-edge is observed for samples doped above the semiconductor–metal boundary, together with the characteristic structures at 150×n meV possibly due to the strong electron–lattice coupling effect. In addition, for the superconducting sample, we observed a shift of the leading edge below Tc indicative of a superconducting gap opening. We discuss the electron–lattice coupling and the superconductivity in doped diamond.

  14. Laser sintered thin layer graphene and cubic boron nitride reinforced nickel matrix nanocomposites

    Science.gov (United States)

    Hu, Zengrong; Tong, Guoquan

    2015-10-01

    Laser sintered thin layer graphene (Gr)-cubic boron nitride (CBN)-Ni nanocomposites were fabricated on AISI 4140 plate substrate. The composites fabricating process, composites microstructure and mechanical properties were studied. Scanning electron microscopy (SEM), X-ray diffraction (XRD) and Raman spectroscopy were employed to study the micro structures and composition of the composites. XRD and Raman tests proved that graphene and CBN were dispersed in the nanocomposites. Nanoindentation test results indicate the significant improvements were achieved in the composites mechanical properties.

  15. Boron doped nanostructure ZnO films deposited by ultrasonic spray pyrolysis

    Energy Technology Data Exchange (ETDEWEB)

    Karakaya, Seniye, E-mail: seniyek@ogu.edu.tr; Ozbas, Omer

    2015-02-15

    Highlights: • Nanostructure undoped and boron doped ZnO films were deposited by USP technique. • Influences of doping on the surface and optical properties of the ZnO films were investigated. • XRD spectra of the films exhibited a variation in crystalline quality depending on the B content. - Abstract: ZnO is an II–VI compound semiconductor with a wide direct band gap of 3.3 eV at room temperature. Doped with group III elements (B, Al or Ga), it becomes an attractive candidate to replace tin oxide (SnO{sub 2}) or indium tin oxide (ITO) as transparent conducting electrodes in solar cell devices and flat panel display due to competitive electrical and optical properties. In this work, ZnO and boron doped ZnO (ZnO:B) films have been deposited onto glass substrates at 350 ± 5 °C by a cost-efficient ultrasonic spray pyrolysis technique. The optical, structural, morphological and electrical properties of nanostructure undoped and ZnO:B films have been investigated. Electrical resistivity of films has been analyzed by four-probe technique. Optical properties and thicknesses of the films have been examined in the wavelength range 1200–1600 nm by using spectroscopic ellipsometry (SE) measurements. The optical constants (refractive index (n) and extinction coefficient (k)) and the thicknesses of the films have been fitted according to Cauchy model. The optical method has been used to determine the band gap value of the films. Transmission spectra have been taken by UV spectrophotometer. It is found that both ZnO and ZnO:B films have high average optical transmission (≥80%). X-ray diffraction (XRD) patterns indicate that the obtained ZnO has a hexagonal wurtzite type structure. The morphological properties of the films were studied by atomic force microscopy (AFM). The surface morphology of the nanostructure films is found to depend on the concentration of B. As a result, ZnO:B films are promising contender for their potential use as transparent window layer and

  16. Erosion of CFC, pyrolytic and boronated graphite under short pulsed laser irradiation

    International Nuclear Information System (INIS)

    Kraaij, G.J.; Bakker, J.; Stad, R.C.L. van der

    1992-07-01

    The effect of short pulsed laser irradiation of '0/3' ms and up to 10 MJ/m 2 on different types of carbon base materials is described. These materials are investigated as candidate protection materials for the Plasma Facing Components of NET/ITER. These materials are: carbon fibre composite graphite, pyrolytic graphite and boronated graphite. The volume of the laser induced craters was measured with an optical topographic scanner, and these data are evaluated with a simple model for the erosion. As a results, the enthalpy of ablation is estimated as 30±3 MJ/kg. A comparison is made with finite element numerical calculations, and the effect of lateral heat transfer is estimated using an analytical model. (author). 8 refs., 23 figs., 4 tabs

  17. Atomic layer deposition of boron-containing films using B{sub 2}F{sub 4}

    Energy Technology Data Exchange (ETDEWEB)

    Mane, Anil U., E-mail: amane@anl.gov; Elam, Jeffrey W. [Argonne National Laboratory, Argonne, Illinois 60126 (United States); Goldberg, Alexander; Halls, Mathew D. [Schrödinger, Inc., San Diego, California 92122 (United States); Seidel, Thomas E. [Seitek50, Palm Coast, Florida 32135 (United States); Current, Michael I. [Current Scientific, San Jose, California 95124 (United States); Despres, Joseph; Byl, Oleg; Tang, Ying; Sweeney, Joseph [Entegris, Danbury, Connecticut 06810 (United States)

    2016-01-15

    Ultrathin and conformal boron-containing atomic layer deposition (ALD) films could be used as a shallow dopant source for advanced transistor structures in microelectronics manufacturing. With this application in mind, diboron tetrafluoride (B{sub 2}F{sub 4}) was explored as an ALD precursor for the deposition of boron containing films. Density functional theory simulations for nucleation on silicon (100) surfaces indicated better reactivity of B{sub 2}F{sub 4} in comparison to BF{sub 3}. Quartz crystal microbalance experiments exhibited growth using either B{sub 2}F{sub 4}-H{sub 2}O for B{sub 2}O{sub 3} ALD, or B{sub 2}F{sub 4}-disilane (Si{sub 2}H{sub 6}) for B ALD, but in both cases, the initial growth per cycle was quite low (≤0.2 Å/cycle) and decreased to near zero growth after 8–30 ALD cycles. However, alternating between B{sub 2}F{sub 4}-H{sub 2}O and trimethyl aluminum (TMA)-H{sub 2}O ALD cycles resulted in sustained growth at ∼0.65 Å/cycle, suggesting that the dense –OH surface termination produced by the TMA-H{sub 2}O combination enhances the uptake of B{sub 2}F{sub 4} precursor. The resultant boron containing films were analyzed for composition by x-ray photoelectron spectroscopy, and capacitance measurements indicated an insulating characteristic. Finally, diffused boron profiles less than 100 Å were obtained after rapid thermal anneal of the boron containing ALD film.

  18. Nanometer sized structures grown by pulsed laser deposition

    KAUST Repository

    ElZein, Basma

    2015-10-01

    Nanometer sized materials can be produced by exposing a target to a laser source to remove material from the target and deposit the removed material onto a surface of a substrate to grow a thin film in a vacuum chamber

  19. In-situ boron doping of chemical-bath deposited CdS thin films

    International Nuclear Information System (INIS)

    Khallaf, Hani; Park, S.; Schulte, Alfons; Chai, Guangyu; Lupan, Oleg; Chow, Lee; Heinrich, Helge

    2009-01-01

    In-situ boron doping of CdS using chemical-bath deposition (CBD) is reported. The effect of B doping on optical properties, as well as electrical properties, crystal structure, chemistry, and morphology of CdS films is studied. We present a successful approach towards B doping of CdS using CBD, where a resistivity as low as 1.7 x 10 -2 Ωcm and a carrier density as high as 1.91 x 10 19 cm -3 were achieved. The bandgap of B-doped films was found to slightly decrease as the[B]/[Cd] ratio in the solution increases. X-ray diffraction studies showed B 3+ ions likely enter the lattice substitutionally. A phase transition, due to annealing, as well as induced lattice defects, due to B doping, were detected by micro-Raman spectroscopy and transmission electron microscopy. The chemistry and morphology of films were unaffected by B doping. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  20. Pulsed Laser Deposition of Tungsten Thin Films on Graphite

    International Nuclear Information System (INIS)

    Kassem, W.; Tabbal, M.; Roumie, M.

    2011-01-01

    Thin coatings of Tungsten were deposited on substrates fabricated by pre-depositing graphite thin layers on Si(100) wafers. We ablate pure W target using a 20 ns KrF excimer laser (248 nm) in an Ar ambient. The effect of background gas pressure, substrate temperature, and laser fluence, on the properties of the deposited W layers is studied using several techniques including X-Ray Diffraction, Atomic Force Microscopy, surface profilometry, and Rutherford Back-Scattering spectrometry. Our results indicate that the deposited layers consist of the well-crystallized body-centered-cubic α-W phase with bulk-like properties, particularly for films deposited at a substrate temperature of 450 0 C, laser fluence greater than 400mJ, and pressure of about 10mTorr. (author)

  1. Deposition of tantalum carbide coatings on graphite by laser interactions

    Science.gov (United States)

    Veligdan, James; Branch, D.; Vanier, P. E.; Barietta, R. E.

    1994-01-01

    Graphite surfaces can be hardened and protected from erosion by hydrogen at high temperatures by refractory metal carbide coatings, which are usually prepared by chemical vapor deposition (CVD) or chemical vapor reaction (CVR) methods. These techniques rely on heating the substrate to a temperature where a volatile metal halide decomposes and reacts with either a hydrocarbon gas or with carbon from the substrate. For CVR techniques, deposition temperatures must be in excess of 2000 C in order to achieve favorable deposition kinetics. In an effort to lower the bulk substrate deposition temperature, the use of laser interactions with both the substrate and the metal halide deposition gas has been employed. Initial testing involved the use of a CO2 laser to heat the surface of a graphite substrate and a KrF excimer laser to accomplish a photodecomposition of TaCl5 gas near the substrate. The results of preliminary experiments using these techniques are described.

  2. Highly sensitive analysis of boron and lithium in aqueous solution using dual-pulse laser-induced breakdown spectroscopy.

    Science.gov (United States)

    Lee, Dong-Hyoung; Han, Sol-Chan; Kim, Tae-Hyeong; Yun, Jong-Il

    2011-12-15

    We have applied a dual-pulse laser-induced breakdown spectroscopy (DP-LIBS) to sensitively detect concentrations of boron and lithium in aqueous solution. Sequential laser pulses from two separate Q-switched Nd:YAG lasers at 532 nm wavelength have been employed to generate laser-induced plasma on a water jet. For achieving sensitive elemental detection, the optimal timing between two laser pulses was investigated. The optimum time delay between two laser pulses for the B atomic emission lines was found to be less than 3 μs and approximately 10 μs for the Li atomic emission line. Under these optimized conditions, the detection limit was attained in the range of 0.8 ppm for boron and 0.8 ppb for lithium. In particular, the sensitivity for detecting boron by excitation of laminar liquid jet was found to be excellent by nearly 2 orders of magnitude compared with 80 ppm reported in the literature. These sensitivities of laser-induced breakdown spectroscopy are very practical for the online elemental analysis of boric acid and lithium hydroxide serving as neutron absorber and pH controller in the primary coolant water of pressurized water reactors, respectively.

  3. Application of laser assisted cold spraying process for metal deposition

    CSIR Research Space (South Africa)

    Tlotleng, Monnamme

    2014-02-01

    Full Text Available Laser assisted cold spraying (LACS) process is a hybrid technique that uses laser and cold spray to deposit solid powders on metal substrates. For bonding to occur, the particle velocities must be supersonic which are achieved by entraining...

  4. Laser cleaning of pulsed laser deposited rhodium films for fusion diagnostic mirrors

    International Nuclear Information System (INIS)

    Uccello, A.; Maffini, A.; Dellasega, D.; Passoni, M.

    2013-01-01

    Highlights: ► Pulsed laser deposition is exploited to produce Rh films for first mirrors. ► Pulsed laser deposition is exploited to produce tokamak-like C contaminants. ► Rh laser damage threshold has been evaluated for infrared pulses. ► Laser cleaning of C contaminated Rh films gives promising results. -- Abstract: In this paper an experimental investigation on the laser cleaning process of rhodium films, potentially candidates to be used as tokamak first mirrors (FMs), from redeposited carbon contaminants is presented. A relevant issue that lowers mirror's performance during tokamak operations is the redeposition of sputtered material from the first wall on their surface. Among all the possible techniques, laser cleaning, in which a train of laser pulses is launched to the surface that has to be treated, is a method to potentially mitigate this problem. The same laser system (Q-switched Nd:YAG laser with a fundamental wavelength of 1064-nm and 7-ns pulses) has been employed with three aims: (i) production by pulsed laser deposition (PLD) of Rh film mirrors, (ii) production by PLD of C deposits with controlled morphology, and (iii) investigation of the laser cleaning method onto C contaminated Rh samples. The evaluation of Rh films laser damage threshold, as a function of fluence and number of pulses, is discussed. Then, the C/Rh films have been cleaned by the laser beam. The exposed zones have been characterized by visual inspection and scanning electron microscopy (SEM), showing promising results

  5. Influence of boron concentration on growth characteristic and electro-catalytic performance of boron-doped diamond electrodes prepared by direct current plasma chemical vapor deposition

    International Nuclear Information System (INIS)

    Feng Yujie; Lv Jiangwei; Liu Junfeng; Gao Na; Peng Hongyan; Chen Yuqiang

    2011-01-01

    A series of boron-doped diamond (BDD) electrodes were prepared by direct current plasma chemical vapor deposition (DC-PCVD) with different compositions of CH 4 /H 2 /B(OCH 3 ) 3 gas mixture. A maximum growth rate of 0.65 mg cm -2 h -1 was obtained with CH 4 /H 2 /B(OCH 3 ) 3 radio of 4/190/10 and this growth condition was also a turning point for discharge plasma stability which arose from the addition of B(OCH 3 ) 3 that changed electron energy distribution and influenced the plasma reaction. The surface coating structure and electro-catalytic performance of the BDD electrodes were characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD), Raman spectroscopy, Hall test, and electrochemical measurement and electro-catalytic oxidation in phenol solution. It is suggested that the boron doping level and the thermal stress in the films are the main factors affecting the electro-catalytic characteristics of the electrodes. Low boron doping level with CH 4 /H 2 /B(OCH 3 ) 3 ratio of 4/199/1 decreased the films electrical conductivity and its electro-catalytic activity. When the carrier concentration in the films reached around 10 20 cm -3 with CH 4 /H 2 /B(OCH 3 ) 3 ratio over a range of 4/195/5-4/185/15, the thermal stress in the films was the key reason that influenced the electro-catalytic activity of the electrodes for its effect on diamond lattice expansion. Therefore, the BDD electrode with modest CH 4 /H 2 /B(OCH 3 ) 3 ratio of 4/190/10 possessed the best phenol removal efficiency.

  6. RHEED study of titanium dioxide with pulsed laser deposition

    DEFF Research Database (Denmark)

    Rasmussen, Inge Lise; Pryds, Nini; Schou, Jørgen

    2009-01-01

    Reflection high-energy electron diffraction (RHEED) operated at high pressure has been used to monitor the growth of thin films of titanium dioxide (TiO2) on (1 0 0) magnesium oxide (MgO) substrates by pulsed laser deposition (PLD). The deposition is performed with a synthetic rutile TiO2 target...

  7. Pulsed laser ablation and deposition of niobium carbide

    International Nuclear Information System (INIS)

    Sansone, M.; De Bonis, A.; Santagata, A.; Rau, J.V.; Galasso, A.; Teghil, R.

    2016-01-01

    Highlights: • We have deposited in vacuum niobium carbide films by fs and ns PLD. • We have compared PLD performed by ultra-short and short laser pulses. • The films deposited by fs PLD of NbC are formed by nanoparticles. • The structure of the films produced by fs PLD at 500 °C corresponds to NbC. - Abstract: NbC crystalline films have been deposited in vacuum by ultra-short pulsed laser deposition technique. The films have been characterized by transmission and scanning electron microscopies and by X-ray diffraction. To clarify the ablation–deposition mechanism, the plasma produced by the ablation process has been characterized by optical emission spectroscopy and fast imaging. A comparison of the results with those obtained by ns pulsed deposition of the same target has been carried out.

  8. Enhancement of surface integrity of titanium alloy with copper by means of laser metal deposition process

    CSIR Research Space (South Africa)

    Erinosho, MF

    2016-04-01

    Full Text Available The laser metal deposition process possesses the combination of metallic powder and laser beam respectively. However, these combinations create an adhesive bonding that permanently solidifies the laser-enhanced-deposited powders. Titanium alloys (Ti...

  9. Ultraviolet laser deposition of graphene thin films without catalytic layers

    KAUST Repository

    Sarath Kumar, S. R.

    2013-01-09

    In this letter, the formation of nanostructured graphene by ultraviolet laser ablation of a highly ordered pyrolytic graphite target under optimized conditions is demonstrated, without a catalytic layer, and a model for the growth process is proposed. Previously, graphene film deposition by low-energy laser (2.3 eV) was explained by photo-thermal models, which implied that graphene films cannot be deposited by laser energies higher than the C-C bond energy in highly ordered pyrolytic graphite (3.7 eV). Here, we show that nanostructured graphene films can in fact be deposited using ultraviolet laser (5 eV) directly over different substrates, without a catalytic layer. The formation of graphene is explained by bond-breaking assisted by photoelectronic excitation leading to formation of carbon clusters at the target and annealing out of defects at the substrate.

  10. Ultraviolet laser deposition of graphene thin films without catalytic layers

    KAUST Repository

    Sarath Kumar, S. R.; Alshareef, Husam N.

    2013-01-01

    In this letter, the formation of nanostructured graphene by ultraviolet laser ablation of a highly ordered pyrolytic graphite target under optimized conditions is demonstrated, without a catalytic layer, and a model for the growth process is proposed. Previously, graphene film deposition by low-energy laser (2.3 eV) was explained by photo-thermal models, which implied that graphene films cannot be deposited by laser energies higher than the C-C bond energy in highly ordered pyrolytic graphite (3.7 eV). Here, we show that nanostructured graphene films can in fact be deposited using ultraviolet laser (5 eV) directly over different substrates, without a catalytic layer. The formation of graphene is explained by bond-breaking assisted by photoelectronic excitation leading to formation of carbon clusters at the target and annealing out of defects at the substrate.

  11. Boron isotopic composition of tertiary borate deposits in the Puna Plateau of the Central Andes, NW Argentina

    International Nuclear Information System (INIS)

    Kasemann, Simone; Franz, Gerhard; Viramonte, Jose G.; Alonso, Ricardo N.

    1998-01-01

    Full text: The most important borate deposits in South America are concentrated in the Central Andes. The Neogene deposits are located in the Puna Plateau of N W Argentina. These continental deposits are stratiform in the tectonically deformed Tertiary rocks. The largest borate accumulations Tincalayu, Sijes and Loma Blanca are part of the Late Miocene Sijes Formation, composed by different evaporitic and clastic units. In the main borate units of each location different phases of borates dominate. In Tincalayu the mayor mineral is borax with minor amounts of kernite and other rare borate minerals (ameginite, rivadavite, etc.). The principal minerals in Loma Blanca are borax with minor ulexite and inyoite. In the two main units of Sijes hydroboracite and colemanite are the major minerals; inyoite and ulexite appear subordinately. The deposition of the borates is due to a strong evaporation in playa lakes, which were fed by boron bearing thermal fluids (Alonso and Viramonte 1990). From Loma Blanca we determined δ 11 B values of ulexite (- 6.3 %0), inyoite (-12.7 %0) and terrugite (-16.2 %0); and from Tincalayu the δ 11 B values of borax (-10.5 %0), tincal (-12.2 %0) kernite (-11.7 %0) and inderite (-15.4 %0). The borates of Sijes are hydroboracite (-16.8 %0 to -17.2 %0), ulexite (-22.4 %0) and inyoite (-28.5 %0 to -29.6 %0). In order to get information about the δ 11 B values and pH of a boron solution we analysed the thermal spring of Antuco. It has a δ 11 B of -12.5%0 at a pH of 7.9. The presently forming ulexite deposit has a δ 11 B of -22.4%0. Borates within one depositional unit show a decreasing δ 11 B value sequence from the Na-Borates to the Ca-Borates related to the boron coordination of the minerals (Oi et al. 1989). The difference in the δ 11 B values excludes the precipitation in equilibrium from solutions with constant pH. According to results from previous work on Neogene borates (Turkey, USA) we interpret the borate succession due to

  12. Exploring the deposition of oxides on silicon for photovoltaic cells by pulsed laser deposition

    NARCIS (Netherlands)

    Doeswijk, L.M.; de Moor, Hugo H.C.; Rogalla, Horst; Blank, David H.A.

    2002-01-01

    Since most commercially available solar cells are still made from silicon, we are exploring the introduction of passivating qualities in oxides, with the potential to serve as an antireflection coating. Pulsed laser deposition (PLD) was used to deposit TiO2 and SrTiO3 coatings on silicon substrates.

  13. Excimer Laser Deposition of PLZT Thin Films

    National Research Council Canada - National Science Library

    Petersen, GAry

    1991-01-01

    .... In order to integrate these devices into optical systems, the production of high quality thin films with high transparency and perovskite crystal structure is desired. This requires development of deposition technologies to overcome the challenges of depositing and processing PLZT thin films.

  14. Effects of laser fluence on the structural properties of pulsed laser deposited ruthenium thin films

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Wai-Keat; Wong, Hin-Yong; Chan, Kah-Yoong; Tou, Teck-Yong [Multimedia University, Centre for Advanced Devices and Systems (CADS), Faculty of Engineering, Cyberjaya, Selangor (Malaysia); Yong, Thian-Khok [Universiti Tunku Abdul Rahman, Faculty of Engineering and Science, Setapak, Kuala Lumpur (Malaysia); Yap, Seong-Shan [Norwegian University of Science and Technology, Institute of Physics, Trondheim (Norway)

    2010-08-15

    Ruthenium (Ru) has received great interest in recent years for applications in microelectronics. Pulsed laser deposition (PLD) enables the growth of Ru thin films at low temperatures. In this paper, we report for the first time the characterization of pulsed laser deposited Ru thin films. The deposition processes were carried out at room temperature in vacuum environment for different durations with a pulsed Nd:YAG laser of 355-nm laser wavelength, employing various laser fluences ranging from 2 J/cm{sup 2} to 8 J/cm{sup 2}. The effect of the laser fluence on the structural properties of the deposited Ru films was investigated using surface profilometry, scanning electron microscopy (SEM), and X-ray diffraction (XRD). Ru droplets, some spherical in shape and some flattened into round discs were found on the deposited Ru. The droplets were correlated to ripple formations on the target during the laser-induced ejection from the target. In addition, crystalline Ru with orientations of (100), (101), and (002) was observed in the XRD spectra and their intensities were found to increase with increasing laser fluence and film thickness. Grain sizes ranging from 20 nm to 35 nm were deduced using the Scherrer formula. Optical emission spectroscopy (OES) and energy-dispersive X-ray spectroscopy (EDS) show that the composition of the plume and the deposited Ru film was of high purity. (orig.)

  15. Effects of laser fluence on the structural properties of pulsed laser deposited ruthenium thin films

    International Nuclear Information System (INIS)

    Lee, Wai-Keat; Wong, Hin-Yong; Chan, Kah-Yoong; Tou, Teck-Yong; Yong, Thian-Khok; Yap, Seong-Shan

    2010-01-01

    Ruthenium (Ru) has received great interest in recent years for applications in microelectronics. Pulsed laser deposition (PLD) enables the growth of Ru thin films at low temperatures. In this paper, we report for the first time the characterization of pulsed laser deposited Ru thin films. The deposition processes were carried out at room temperature in vacuum environment for different durations with a pulsed Nd:YAG laser of 355-nm laser wavelength, employing various laser fluences ranging from 2 J/cm 2 to 8 J/cm 2 . The effect of the laser fluence on the structural properties of the deposited Ru films was investigated using surface profilometry, scanning electron microscopy (SEM), and X-ray diffraction (XRD). Ru droplets, some spherical in shape and some flattened into round discs were found on the deposited Ru. The droplets were correlated to ripple formations on the target during the laser-induced ejection from the target. In addition, crystalline Ru with orientations of (100), (101), and (002) was observed in the XRD spectra and their intensities were found to increase with increasing laser fluence and film thickness. Grain sizes ranging from 20 nm to 35 nm were deduced using the Scherrer formula. Optical emission spectroscopy (OES) and energy-dispersive X-ray spectroscopy (EDS) show that the composition of the plume and the deposited Ru film was of high purity. (orig.)

  16. Particulate generation during pulsed laser deposition of superconductor thin films

    International Nuclear Information System (INIS)

    Singh, R.K.

    1993-01-01

    The nature of evaporation/ablation characteristics during pulsed laser deposition strongly controls the quality of laser-deposited films. To understand the origin of particulates in laser deposited films, the authors have simulated the thermal history of YBa 2 Cu 3 O 7 targets under intense nanosecond laser irradiation by numerically solving the heat flow equation with appropriate boundary conditions. During planar surface evaporation of the target material, the sub-surface temperatures were calculated to be higher than the surface temperatures. While the evaporating surface of the target is constantly being cooled due to the latent heat of vaporization, subsurface superheating occurs due to the finite absorption depth of the laser beam. Sub-surface superheating was found to increase with decreasing absorption coefficient and thermal conductivity of the target, and with increasing energy density. The superheating may lead to sub-surface nucleation and growth of the gaseous phase which can expand rapidly leading to microexplosions and ''volume expulsion'' of material from the target. Experiments conducted by the authors and other research groups suggest a strong relation between degree of sub-surface superheating and particle density in laser-deposited films

  17. Towards laser spectroscopy of the proton-halo candidate boron-8

    Energy Technology Data Exchange (ETDEWEB)

    Maaß, Bernhard, E-mail: bmaass@ikp.tu-darmstadt.de [Technische Universität Darmstadt, Institut für Kernphysik (Germany); Müller, Peter [Argonne National Laboratory, Physics Division (United States); Nörtershäuser, Wilfried [Technische Universität Darmstadt, Institut für Kernphysik (Germany); Clark, Jason [Argonne National Laboratory, Physics Division (United States); Gorges, Christian; Kaufmann, Simon; König, Kristian; Krämer, Jörg [Technische Universität Darmstadt, Institut für Kernphysik (Germany); Levand, Anthony; Orford, Rodney [Argonne National Laboratory, Physics Division (United States); Sánchez, Rodolfo [GSI Helmholtzzentrum für Schwerionenforschung (Germany); Savard, Guy [Argonne National Laboratory, Physics Division (United States); Sommer, Felix [Technische Universität Darmstadt, Institut für Kernphysik (Germany)

    2017-11-15

    We propose to determine the nuclear charge radius of {sup 8}B by high-resolution laser spectroscopy. {sup 8}B (t {sub 1/2} = 770 ms) is perhaps the best candidate of a nucleus exhibiting an extended proton wave-function or “one-proton-halo” in a more descriptive picture. Laser spectroscopic measurements of the isotope shift will be used to probe the change in nuclear charge radius along the three boron isotopes {sup 8}B, {sup 10}B and {sup 11}B. The change in nuclear charge radius directly correlates with the extent of the proton wave function. In-flight production and preparation of sufficient yields of {sup 8}B ions at low energies is provided by the Argonne Tandem Linac Accelerator System (ATLAS) at Argonne National Laboratory (ANL) in Chicago, IL, USA. Subsequently, the ions will be guided through a charge exchange cell for neutralization and the fluorescence signal of the atoms which interact with the resonant laser light will be detected. The charge radius can then be extracted from the measured isotope shift by employing highly accurate atomic theory calculations of this five-electron system which are carried out presently.

  18. Development of the process of boron electrophoresis deposition on aluminum substate to be used in the construction of neutron detectors

    International Nuclear Information System (INIS)

    Oliveira Sampa, M.H. de; Vinhas, L.A.

    1989-11-01

    Process of baron electrophoresis depositon on large areas of aluminum substrates was developed with the aim of using them in the construction of neutron detectors. After definition and optimization of the boron electrophoresis parameters, depositions of 10 B on aluminium cylinders were performed and used as electrodes in gamma compensated and non-compensated ionization chambers and in proportional detectors. Prototypers of ionization chambers were designed, built and assembled at the Departinent for Engineering and Industry Application (TE) of the Instituto de Pesquisas Energeticas e Nucleares (IPEN), and submited for characterization tests at IEA-R1 reactor. They fully met the technical specifications of the projects. (author) [pt

  19. Materials testing using laser energy deposition

    International Nuclear Information System (INIS)

    Wilcox, W.W.; Calder, C.A.

    1977-01-01

    A convenient method for determining the elastic constants of materials has been devised using the energy from a Q-switched neodymium-glass laser. Stress waves are induced in materials having circular rod or rectangular bar geometries by the absorption of energy from the laser. The wave transit times through the material are recorded with a piezoelectric transducer. Both dilatation and shear wave velocities are determined in a single test using an ultrasonic technique and these velocities are used to calculate the elastic constants of the material. A comparison of the constants determined for ten common engineering materials using this method is made with constants derived using the conventional ultrasonic pulse technique and agreement is shown to be about one percent in most cases. Effects of material geometry are discussed and surface damage to the material caused by laser energy absorption is shown

  20. Laser-deposited thin films for butane detection

    Czech Academy of Sciences Publication Activity Database

    Jelínek, Miroslav; Kocourek, Tomáš; Flory, F.; Escoubas, L.; Mazingue, T.; Myslík, V.; Vrňata, M.; Fryček, R.; Vysloužil, F.

    2006-01-01

    Roč. 16, č. 2 (2006), s. 217-222 ISSN 1054-660X R&D Projects: GA AV ČR(CZ) IAA1010110; GA ČR(CZ) GA104/03/0406 Grant - others:NANOPHOS(XE) IST-2001-39112 Institutional research plan: CEZ:AV0Z10100522 Keywords : laser deposition * gas sensor * mode spectroscopy Subject RIV: BH - Optics, Masers, Lasers Impact factor: 0.516, year: 2006

  1. Laser ablation deposition measurements from silver and nickel

    DEFF Research Database (Denmark)

    Svendsen, Winnie Edith; Ellegaard, Ole; Schou, Jørgen

    1996-01-01

    The deposition rate for laser ablated metals has been studied in a standard geometry for fluences up to 20 J/cm(2). The rate for silver and nickel is a few percent of a monolayer per pulse at the laser wavelengths 532 nm and 355 nm. The rate for nickel is significantly higher than that for silver...... at 532 nm, whereas the rate for the two metals is similar at 355 nm. This behaviour disagrees with calculations based on the thermal properties at low intensities as well as predictions based on formation of an absorbing plasma at high intensities. The deposition rate falls strongly with increasing...

  2. Laser-assisted deposition of thin C60 films

    DEFF Research Database (Denmark)

    Schou, Jørgen; Canulescu, Stela; Fæster, Søren

    Metal and metal oxide films with controlled thickness from a fraction of a monolayer up more than 1000 nm and known stoichiometry can be produced by pulsed laser deposition (PLD) relatively easily, and (PLD) is now a standard technique in all major research laboratories within materials science...... of the matrix material, anisole, with a concentration of 0.67 wt% C60. At laser fluences below 1.5 J/cm2, a dominant fraction of the film molecules are C60 transferred to the substrate without any fragmentation. High-resolution SEM images of MAPLE deposited films reveal large circular features on the surface...

  3. Investigation of optimized experimental parameters including laser wavelength for boron measurement in photovoltaic grade silicon using laser-induced breakdown spectroscopy

    International Nuclear Information System (INIS)

    Darwiche, S.; Benmansour, M.; Eliezer, N.; Morvan, D.

    2010-01-01

    The quantification of boron and other impurities in photovoltaic grade silicon was investigated using the LIBS technique with attention to the laser wavelength employed, temporal parameters, and the nature of the ambient gas. The laser wavelength was found to have a moderate effect on the performance of the process, while the type of purge gas and temporal parameters had a strong effect on the signal-to-background ratio (SBR) of the boron spectral emission, which was used to determine the boron concentration in silicon. The three parameters are not independent, meaning that for each different purge gas, different optimal temporal parameters are observed. Electron density was also calculated from Stark broadening of the 390.5 nm silicon emission line in order to better understand the different performances observed when using different gases and gating parameters. Calibration curves were made for boron measurement in silicon using certified standards with different purge gases while using the temporal parameters which had been optimized for that gas. By comparing the calibration curves, it was determined that argon is superior to helium or air for use as the analysis chamber purge gas with an UV laser.

  4. Material efficiency of laser metal deposited Ti6Al4V: Effect of laser power

    CSIR Research Space (South Africa)

    Mahamood, RM

    2013-02-01

    Full Text Available The economy of using Laser Metal Deposition (LMD) process in the manufacturing of aerospace parts depends on the right processing parameters. LMD is an additive manufacturing technology capable of producing complex parts directly from the CAD model...

  5. UV laser deposition of metal films by photogenerated free radicals

    Science.gov (United States)

    Montgomery, R. K.; Mantei, T. D.

    1986-01-01

    A novel photochemical method for liquid-phase deposition of metal films is described. In the liquid phase deposition scheme, a metal containing compound and a metal-metal bonded carbonyl complex are dissolved together in a polar solvent and the mixture is irradiated using a UV laser. The optical arrangement consists of a HeCd laser which provides 7 mW of power at a wavelength of 325 nm in the TEM(OO) mode. The beam is attenuated and may be expanded to a diameter of 5-20 mm. Experiments with photochemical deposition of silver films onto glass and quartz substrates are described in detail. Mass spectrometric analysis of deposited silver films indicated a deposition rate of about 1 A/s at incident power levels of 0.01 W/sq cm. UV laser-induced copper and palladium films have also been obtained. A black and white photograph showing the silver Van Der Pauw pattern of a solution-deposited film is provided.

  6. Optical and electrical properties of boron doped diamond thin conductive films deposited on fused silica glass substrates

    Energy Technology Data Exchange (ETDEWEB)

    Ficek, M.; Sobaszek, M.; Gnyba, M. [Department of Metrology and Optoelectronics, Gdansk University of Technology, 11/12G. Narutowicza St., 80-233 Gdansk (Poland); Ryl, J. [Department of Electrochemistry, Corrosion and Material Engineering, Gdansk University of Technology, 11/12 Narutowicza St., 80-233 Gdansk (Poland); Gołuński, Ł. [Department of Metrology and Optoelectronics, Gdansk University of Technology, 11/12G. Narutowicza St., 80-233 Gdansk (Poland); Smietana, M.; Jasiński, J. [Institute of Microelectronics and Optoelectronics, Warsaw University of Technology, 75 Koszykowa St., 00-662 Warsaw (Poland); Caban, P. [Institute of Electronic Materials Technology, 133 Wolczynska St., 01-919 Warsaw (Poland); Bogdanowicz, R., E-mail: rbogdan@eti.pg.gda.pl [Department of Metrology and Optoelectronics, Gdansk University of Technology, 11/12G. Narutowicza St., 80-233 Gdansk (Poland); Materials and Process Simulation Center, California Institute of Technology, Pasadena, CA 91125 (United States)

    2016-11-30

    Highlights: • Growth of 60% of transmittance diamond films with resistivity as low as 48 Ω cm. • Two step seeding process of fused silica: plasma hydrogenation and wet seeding. • Nanodiamond seeding density of 2 × 10{sup 10} cm{sup −2} at fused silica substrates. • High refractive index (2.4 @550 nm) was achieved for BDD films deposited at 500 °C. - Abstract: This paper presents boron-doped diamond (BDD) film as a conductive coating for optical and electronic purposes. Seeding and growth processes of thin diamond films on fused silica have been investigated. Growth processes of thin diamond films on fused silica were investigated at various boron doping level and methane admixture. Two step pre-treatment procedure of fused silica substrate was applied to achieve high seeding density. First, the substrates undergo the hydrogen plasma treatment then spin-coating seeding using a dispersion consisting of detonation nanodiamond in dimethyl sulfoxide with polyvinyl alcohol was applied. Such an approach results in seeding density of 2 × 10{sup 10} cm{sup −2}. The scanning electron microscopy images showed homogenous, continuous and polycrystalline surface morphology with minimal grain size of 200 nm for highly boron doped films. The sp{sup 3}/sp{sup 2} ratio was calculated using Raman spectra deconvolution method. A high refractive index (range of 2.0–2.4 @550 nm) was achieved for BDD films deposited at 500 °C. The values of extinction coefficient were below 0.1 at λ = 550 nm, indicating low absorption of the film. The fabricated BDD thin films displayed resistivity below 48 Ohm cm and transmittance over 60% in the visible wavelength range.

  7. Chromium carbide thin films deposited by ultra-short pulse laser deposition

    International Nuclear Information System (INIS)

    Teghil, R.; Santagata, A.; De Bonis, A.; Galasso, A.; Villani, P.

    2009-01-01

    Pulsed laser deposition performed by a laser with a pulse duration of 250 fs has been used to deposit films from a Cr 3 C 2 target. Due to the different processes involved in the laser ablation when it is performed by an ultra-short pulse source instead of a conventional short pulse one, it has been possible to obtain in vacuum films containing only one type of carbide, Cr 3 C 2 , as shown by X-ray photoelectron spectroscopy. On the other hand, Cr 3 C 2 is not the only component of the films, since a large amount of amorphous carbon is also present. The films, deposited at room temperature, are amorphous and seem to be formed by the coalescence of a large number of particles with nanometric size. The film composition can be explained in terms of thermal evaporation from particles ejected from the target.

  8. Boron-doped zinc oxide thin films for large-area solar cells grown by metal organic chemical vapor deposition

    International Nuclear Information System (INIS)

    Chen, X.L.; Xu, B.H.; Xue, J.M.; Zhao, Y.; Wei, C.C.; Sun, J.; Wang, Y.; Zhang, X.D.; Geng, X.H.

    2007-01-01

    Boron-doped zinc oxide (ZnO:B) films were grown by metal organic chemical vapor deposition using diethylzinc (DEZn), and H 2 O as reactant gases and diborane (B 2 H 6 ) as an n-type dopant gas. The structural, electrical and optical properties of ZnO films doped at different B 2 H 6 flow rates were investigated. X-ray diffraction spectra and scanning electron microscopy images indicate that boron-doping plays an important role on the microstructure of ZnO films, which induced textured morphology. With optimized conditions, low sheet resistance (∼ 30 Ω/□), high transparency (> 85% in the visible light and infrared range) and high mobility (17.8 cm 2 V -1 s -1 ) were obtained for 700-nm ZnO:B films deposited on 20 cm x 20 cm glass substrates at the temperature of 443 K. After long-term exposure in air, the ZnO:B films also showed a better electrical stability than the un-doped samples. With the application of ZnO:B/Al back contacts, the short circuit current density was effectively enhanced by about 3 mA/cm 2 for a small area a-Si:H cell and a high efficiency of 9.1% was obtained for a large-area (20 cm x 20 cm) a-Si solar module

  9. In situ observations during chemical vapor deposition of hexagonal boron nitride on polycrystalline copper

    DEFF Research Database (Denmark)

    Kidambi, Piran R.; Blume, Raoul; Kling, Jens

    2014-01-01

    processing, and that this negatively affects the stability of h-BN on the catalyst. For extended air exposure Cu oxidation is observed, and upon re-heating in vacuum an oxygen-mediated disintegration of the h-BN film via volatile boron oxides occurs. Importantly, this disintegration is catalyst mediated, i...

  10. Use of B{sub 2}O{sub 3} films grown by plasma-assisted atomic layer deposition for shallow boron doping in silicon

    Energy Technology Data Exchange (ETDEWEB)

    Kalkofen, Bodo, E-mail: bodo.kalkofen@ovgu.de; Amusan, Akinwumi A.; Bukhari, Muhammad S. K.; Burte, Edmund P. [Institute of Micro and Sensor Systems, Otto-von-Guericke University, Universitätsplatz 2, 39106 Magdeburg (Germany); Garke, Bernd [Institute for Experimental Physics, Otto-von-Guericke University, Universitätsplatz 2, 39106 Magdeburg (Germany); Lisker, Marco [IHP, Im Technologiepark 25, 15236 Frankfurt (Oder) (Germany); Gargouri, Hassan [SENTECH Instruments GmbH, Schwarzschildstraße 2, 12489 Berlin (Germany)

    2015-05-15

    Plasma-assisted atomic layer deposition (PALD) was carried for growing thin boron oxide films onto silicon aiming at the formation of dopant sources for shallow boron doping of silicon by rapid thermal annealing (RTA). A remote capacitively coupled plasma source powered by GaN microwave oscillators was used for generating oxygen plasma in the PALD process with tris(dimethylamido)borane as boron containing precursor. ALD type growth was obtained; growth per cycle was highest with 0.13 nm at room temperature and decreased with higher temperature. The as-deposited films were highly unstable in ambient air and could be protected by capping with in-situ PALD grown antimony oxide films. After 16 weeks of storage in air, degradation of the film stack was observed in an electron microscope. The instability of the boron oxide, caused by moisture uptake, suggests the application of this film for testing moisture barrier properties of capping materials particularly for those grown by ALD. Boron doping of silicon was demonstrated using the uncapped PALD B{sub 2}O{sub 3} films for RTA processes without exposing them to air. The boron concentration in the silicon could be varied depending on the source layer thickness for very thin films, which favors the application of ALD for semiconductor doping processes.

  11. Laser deposition and analysis of biocompatible ceramic films - experiences andoverview

    Czech Academy of Sciences Publication Activity Database

    Jelínek, Miroslav; Dostálová, T.; Fotakis, C.; Studnička, Václav; Jastrabík, Lubomír; Havránek, V.; Grivas, C.; Pospíchal, M.; Kadlec, J.; Peřina, Vratislav

    1996-01-01

    Roč. 6, č. 1 (1996), s. 144-149 ISSN 1054-660X Institutional research plan: CEZ:A02/98:Z1-010-914 Keywords : laser deposition * hydroxyapatite * ceramic films Subject RIV: BM - Solid Matter Physics ; Magnetism

  12. Pulsed-laser deposited ZnO for device applications

    NARCIS (Netherlands)

    King, S.L.; Gardeniers, Johannes G.E.; Boyd, I.W.

    1996-01-01

    The study investigates the growth by pulsed-laser deposition (PLD) of ZnO thin films for the eventual incorporation into piezo-electric actuators and other sensors being developed at the University of Twente. All films are purely c-axis oriented, and results are presented which suggest the

  13. Direct Patterning of Oxides by Pulsed Laser Stencil Deposition

    NARCIS (Netherlands)

    te Riele, P.M.

    2008-01-01

    This thesis describes a detailed study of the application of stencil technology in the patterning of epitaxial oxide thin films by pulsed laser deposition (PLD). Stencil patterning has been applied in thin film sub-micron patterning of metals successfully for decades since it has several advantages

  14. The role of transverse speed on deposition height and material efficiency in laser deposited titanium alloy

    CSIR Research Space (South Africa)

    Mahamood, RM

    2013-03-01

    Full Text Available The most commonly used aerospace titanium alloy, Ti6Al4V, was deposited on Ti6Al4V plate of dimension 72 x 72 x5mm. The laser power of 3 kW, powder flow rate of 1.44 g/min and gas flow rate of 4 l/min were used throughout the deposition process...

  15. Vertically aligned carbon nanotube growth by pulsed laser deposition and thermal chemical vapor deposition methods

    International Nuclear Information System (INIS)

    Sohn, Jung Inn; Nam, Chunghee; Lee, Seonghoon

    2002-01-01

    We have grown vertically aligned carbon nanotubes on the various substrates such as a planar p-type Si(1 0 0) wafer, porous Si wafer, SiO 2 , Si 3 N 4 , Al 2 O 3 , and Cr by thermal chemical vapor deposition (CVD) at 800 deg.C, using C 2 H 2 gas as a carbon source and Fe catalyst films deposited by a pulsed laser on the substrates. The Fe films were deposited for 5 min by pulsed laser deposition (PLD). The advantage of Fe deposition by PLD over other deposition methods lies in the superior adhesion of Fe to a Si substrate due to high kinetic energies of the generated Fe species. Scanning electron microscopy (SEM) images show that vertically well-aligned carbon nanotubes are grown on Fe nanoparticles formed from the thermal annealing of the Fe film deposited by PLD on the various substrates. Atomic force microscopy (AFM) images show that the Fe film annealed at 800 deg.C is broken to Fe nanoparticles of 10-50 nm in size. We show that the appropriate density of Fe nanoparticles formed from the thermal annealing of the film deposited by PLD is crucial in growing vertically aligned carbon nanotubes. Using a PLD and a lift-off method, we developed the selective growth of carbon nanotubes on a patterned Fe-coated Si substrate

  16. Powder Flux Regulation in the Laser Material Deposition Process

    Science.gov (United States)

    Arrizubieta, Jon Iñaki; Wegener, Maximiliam; Arntz, Kristian; Lamikiz, Aitzol; Ruiz, Jose Exequiel

    In the present research work a powder flux regulation system has been designed, developed and validated with the aim of improving the Laser Material Deposition (LMD) process. In this process, the amount of deposited material per substrate surface unit area depends on the real feed rate of the nozzle. Therefore, a regulation system based on a solenoid valve has been installed at the nozzle entrance in order to control the powder flux. The powder flux control has been performed based on the machine real feed rate, which is compared with the programmed feed rate. An instantaneous velocity error is calculated and the powder flow is controlled as a function of this variation using Pulse Width Modulation (PWM) signals. Thereby, in zones where the Laser Material Deposition machine reduces the feed rate due to a trajectory change, powder accumulation can be avoided and the generated clads would present a homogeneous shape.

  17. Growth modes of pentacene films obtained by pulsed laser deposition

    International Nuclear Information System (INIS)

    Wisz, G.; Kuzma, M.; Virt, I.; Sagan, P.; Rudyj, I.

    2011-01-01

    Thin pentacene films were deposited on KCl and ITO/glass substrates by the pulsed laser deposition method (PLD) using a YAG:Nd 3+ laser with a second harmonic (λ = 532 nm). We compared the structure of the layer on differently oriented substrates with respect to the pentacene plasma plume - vertical and parallel orientation. The structure of the layers formed was examined using SEM, RHEED and THEED methods. The lattice parameters of the layer deposited on KCl were determined from THEED pattern (a = 5.928 A, b 7.874 A, c = 14,98 A, α = 76.54 o , β 75.17 o , γ = 89.20 o ). The preferred direction [11-bar 0] of the layer growth on KCl substrate was addressed. The effect of the substrate orientation results in a different growth mode of the layers.

  18. Laser deposition of carbide-reinforced coatings

    International Nuclear Information System (INIS)

    Cerri, W.; Martinella, R.; Mor, G.P.; Bianchi, P.; D'Angelo, D.

    1991-01-01

    CO 2 laser cladding with blown powder presents many advantages: fusion bonding with the substrate with low dilution, metallurgical continuity in the metallic matrix, high solidification rates, ease of automation, and reduced environmental contamination. In the present paper, laser cladding experimental results using families of carbides (tungsten and titanium) mixed with metallic alloys are reported. As substrates, low alloy construction steel (AISI 4140) (austenitic stainless steel) samples have been utilized, depending on the particular carbide reinforcement application. The coating layers obtained have been characterized by metallurgical examination. They show low dilution, absence of cracks, and high abrasion resistance. The WC samples, obtained with different carbide sizes and percentages, have been characterized with dry and rubber wheel abrasion tests and the specimen behaviour has been compared with the behaviour of materials used for similar applications. The abrasion resistance proved to be better than that of other widely used hardfacing materials and the powder morphology have a non-negligible influence on the tribological properties. (orig.)

  19. Comparative study on Pulsed Laser Deposition and Matrix Assisted Pulsed Laser Evaporation of urease thin films

    International Nuclear Information System (INIS)

    Smausz, Tomi; Megyeri, Gabor; Kekesi, Renata; Vass, Csaba; Gyoergy, Eniko; Sima, Felix; Mihailescu, Ion N.; Hopp, Bela

    2009-01-01

    Urease thin films were produced by Matrix Assisted Pulsed Laser Evaporation (MAPLE) and Pulsed Laser Deposition from two types of targets: frozen water solutions of urease with different concentrations (1-10% m/v) and pure urease pellets. The fluence of the ablating KrF excimer laser was varied between 300 and 2200 mJ/cm 2 . Fourier transform infrared spectra of the deposited films showed no difference as compared to the original urease. Morphologic studies proved that the films consist of a smooth 'base' layer with embedded micrometer-sized droplets. Absorption-coefficient measurements contradicted the traditional 'absorptive matrix' model for MAPLE deposition. The laser energy was absorbed by urease clusters leading to a local heating-up and evaporation of the frozen matrix from the uppermost layer accompanied by the release of dissolved urease molecules. Significant enzymatic activity of urease was preserved only during matrix assisted transfer.

  20. Bonding structure and mechanical properties of B-C-N thin films synthesized by pulsed laser deposition at different laser fluences

    International Nuclear Information System (INIS)

    Wang, C.B.; Xiao, J.L.; Shen, Q.; Zhang, L.M.

    2016-01-01

    Boron carbon nitride (B-C-N) thin films have been grown by pulsed laser deposition under different laser fluences changing from 1.0 to 3.0 J/cm"2. The influence of laser fluence on microstructure, bonding structure, and mechanical properties of the films was studied, so as to explore the possibility of improving their mechanical properties by controlling bonding structure. The bonding structure identified by FT-IR and XPS indicated the coexistence of B-N, B-C, N-C and N=C bonds in the films, suggesting the formation of a ternary B-C-N hybridization. There is a clear evolution of bonding structure in the B-C-N films with the increasing of laser fluence. The variation of the mechanical properties as a function of laser fluence was also in accordance with the evolution of B-C and sp"3 N-C bonds whereas contrary to that of sp"2 B-N and N=C bonds. The hardness and modulus reached the maximum value of 33.7 GPa and 256 GPa, respectively, at a laser fluence of 3.0 J/cm"2, where the B-C-N thin films synthesized by pulsed laser deposition possessed the highest intensity of B-C and N-C bonds and the lowest fraction of B-N and N=C bonds. - Highlights: • Improvement of mechanical property by controlling bonding structure is explored. • A clear evolution of bonding structure with the increasing of laser fluence • Variation of property is in accordance with the evolution of B−C and N−C bonds.

  1. Comparison of boron diffusion in silicon during shallow p{sup +}/n junction formation by non-melt excimer and green laser annealing

    Energy Technology Data Exchange (ETDEWEB)

    Aid, Siti Rahmah; Matsumoto, Satoru [Department of Electronics and Electrical Engineering, Keio University, 3-14-1 Hiyoshi, Kouhoku-ku, Yokohama, Kanagawa 223-8522 (Japan); Fuse, Genshu [SEN Corporation, SBS Tower 9F, 4-10-1 Yoga, Setagaya-ku, Tokyo 158-0097 (Japan); Sakuragi, Susumu [Sumitomo Heavy Industries Ltd., 19 Natsushima-cho, Yokosuka, Kanagawa 237-8555 (Japan)

    2011-12-15

    The combination of Ge pre-amorphization implantation, low-energy boron implantation, and non-melt laser annealing is a promising method for forming ultrashallow p{sup +}/n junctions in silicon. In this study, shallow p{sup +}/n junctions were formed by non-melt annealing implanted samples using a green laser (visible laser). The dopant diffusion, activation, and recrystallization of an amorphous silicon layer were compared with those obtained in our previous study in which non-melt annealing was performed using a KrF excimer laser (UV laser). The experimental results reveal that only slight diffusion of boron in the tail region occurred in green-laser-annealed samples. In contrast, remarkable boron diffusion occurred in KrF-laser-annealed samples for very short annealing times. Recrystallization of the amorphous silicon layer was slower in green-laser-annealed samples than in KrF-laser-annealed samples. We consider the penetration depth and the pulse duration are important factors that may affect boron diffusion. (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  2. Laser ablation studies of Deposited Silver Colloids Active in SERS

    International Nuclear Information System (INIS)

    La Porte, R.T.; Moreno, D.S.; Striano, M.C.; Munnoz, M.M.; Garcia-Ramos, J.V.; Cortes, S.S.; Koudoumas, E.

    2002-01-01

    Laser ablation of deposited silver colloids, active in SERS, is carried out at three different laser wavelengths (KrF, XeCl and Nd:YAG at λ = 248, 308 and 532 nm respectively). Emission form excited neutral Ag and Na atoms, present in the ablation plume, is detected with spectral and temporal resolution. The expansion velocity of Ag in the plume is estimated in ∼1x104m s-1, Low-fluence laser ablation of the colloids yields ionized species that are analyzed by time-of-flight mass spectroscopy. Na+ and Agn+(n≤3) are observed. Composition of the mass spectra and widths of the mass peaks are found to be dependent on laser wavelength, suggesting that the dominant ablation mechanisms are different at the different wavelenghts.

  3. The spatial thickness distribution of metal films produced by large area pulsed laser deposition

    DEFF Research Database (Denmark)

    Pryds, Nini; Schou, Jørgen; Linderoth, Søren

    2007-01-01

    Thin films of metals have been deposited in the large-area Pulsed Laser Deposition (PLD) Facility at Riso National Laboratory. Thin films of Ag and Ni were deposited with laser pulses from an excimer laser at 248 nm with a rectangular beam spot at a fluence of 10 J/cm(2) on glass substrates of 127...

  4. Chromium-doped diamond-like carbon films deposited by dual-pulsed laser deposition

    Czech Academy of Sciences Publication Activity Database

    Písařík, Petr; Jelínek, Miroslav; Kocourek, Tomáš; Zezulová, M.; Remsa, Jan; Jurek, Karel

    2014-01-01

    Roč. 117, č. 1 (2014), s. 83-88 ISSN 0947-8396 R&D Projects: GA MŠk LD12069 Institutional support: RVO:68378271 Keywords : diamond like carbon * chromium * contact angle * surface free energy * dual laser deposition * zeta potential Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.704, year: 2014

  5. LARGE AREA FILTERED ARC DEPOSITION OF CARBON AND BORON BASED HARD COATINGS

    Energy Technology Data Exchange (ETDEWEB)

    Bhattacharya, Rabi S.

    2003-12-05

    This document is a final report covering work performed under Contract No. DE-FG02-99ER82911 from the Department of Energy under a SBIR Phase II Program. Wear resistant, hard coatings can play a vital role in many engineering applications. The primary goal of this project was to develop coatings containing boron and carbon with hardness greater than 30 GPa and evaluate these coatings for machining applications. UES has developed a number of carbon and boron containing coatings with hardness in the range of 34 to 65 GPa using a combination of filtered cathodic arc and magnetron sputtering. The boron containing coatings were based on TiB2, TiBN, and TiBCN, while the carbon containing coatings ere TiC+C and hydrogen free diamond-like-carbon. Machining tests were performed with single and multilayer coated tools. The turning and milling tests were run at TechSolve Inc., under a subcontract at Ohio State University. Significant increases in tool lives were realized in end milling of H-13 die steel (8X) and titanium alloy (80%) using the TiBN coating. A multilayer TiBN/TiN performed the best in end-milling of highly abrasive Al-Si alloys. A 40% increase in life over the TiAlN benchmark coating was found. Further evaluations of these coatings with commercialization partners are currently in progress.

  6. Fluorine and boron co-doped diamond-like carbon films deposited by pulsed glow discharge plasma immersion ion processing

    CERN Document Server

    He, X M; Peters, A M; Taylor, B; Nastasi, M

    2002-01-01

    Fluorine (F) and boron (B) co-doped diamond-like carbon (FB-DLC) films were prepared on different substrates by the plasma immersion ion processing (PIIP) technique. A pulse glow discharge plasma was used for the PIIP deposition and was produced at a pressure of 1.33 Pa from acetylene (C sub 2 H sub 2), diborane (B sub 2 H sub 6), and hexafluoroethane (C sub 2 F sub 6) gas. Films of FB-DLC were deposited with different chemical compositions by varying the flow ratios of the C sub 2 H sub 2 , B sub 2 H sub 6 , and C sub 2 F sub 6 source gases. The incorporation of B sub 2 H sub 6 and C sub 2 F sub 6 into PIIP deposited DLC resulted in the formation of F-C and B-C hybridized bonding structures. The levels of the F and B concentrations effected the chemical bonding and the physical properties as was evident from the changes observed in density, hardness, stress, friction coefficient, and contact angle of water on films. Compared to B-doped or F-doped DLC films, the F and B co-doping of DLC during PIIP deposition...

  7. Microstructural and mechanical characterization of laser deposited advanced materials

    Science.gov (United States)

    Sistla, Harihar Rakshit

    Additive manufacturing in the form of laser deposition is a unique way to manufacture near net shape metallic components from advanced materials. Rapid solidification facilitates the extension of solid solubility, compositional flexibility and decrease in micro-segregation in the melt among other advantages. The current work investigates the employment of laser deposition to fabricate the following: 1. Functionally gradient materials: This allows grading dissimilar materials compositionally to tailor specific properties of both these materials into a single component. Specific compositions of the candidate materials (SS 316, Inconel 625 and Ti64) were blended and deposited to study the brittle intermetallics reported in these systems. 2. High entropy alloys: These are multi- component alloys with equiatomic compositions of 5 or more elements. The ratio of Al to Ni was decreased to observe the transition of solid solution from a BCC to an FCC crystal structure in the AlFeCoCrNi system. 3. Structurally amorphous alloys: Zr-based metallic glasses have been reported to have high glass forming ability. These alloys have been laser deposited so as to rapidly cool them from the melt into an amorphous state. Microstructural analysis and X-ray diffraction were used to study the phase formation, and hardness was measured to estimate the mechanical properties.

  8. Matrix shaped pulsed laser deposition: New approach to large area and homogeneous deposition

    Energy Technology Data Exchange (ETDEWEB)

    Akkan, C.K.; May, A. [INM – Leibniz Institute for New Materials, CVD/Biosurfaces Group, Campus D2 2, 66123 Saarbrücken (Germany); Hammadeh, M. [Department for Obstetrics, Gynecology and Reproductive Medicine, IVF Laboratory, Saarland University Medical Center and Faculty of Medicine, Building 9, 66421 Homburg, Saar (Germany); Abdul-Khaliq, H. [Clinic for Pediatric Cardiology, Saarland University Medical Center and Faculty of Medicine, Building 9, 66421 Homburg, Saar (Germany); Aktas, O.C., E-mail: cenk.aktas@inm-gmbh.de [INM – Leibniz Institute for New Materials, CVD/Biosurfaces Group, Campus D2 2, 66123 Saarbrücken (Germany)

    2014-05-01

    Pulsed laser deposition (PLD) is one of the well-established physical vapor deposition methods used for synthesis of ultra-thin layers. Especially PLD is suitable for the preparation of thin films of complex alloys and ceramics where the conservation of the stoichiometry is critical. Beside several advantages of PLD, inhomogeneity in thickness limits use of PLD in some applications. There are several approaches such as rotation of the substrate or scanning of the laser beam over the target to achieve homogenous layers. On the other hand movement and transition create further complexity in process parameters. Here we present a new approach which we call Matrix Shaped PLD to control the thickness and homogeneity of deposited layers precisely. This new approach is based on shaping of the incoming laser beam by a microlens array and a Fourier lens. The beam is split into much smaller multi-beam array over the target and this leads to a homogenous plasma formation. The uniform intensity distribution over the target yields a very uniform deposit on the substrate. This approach is used to deposit carbide and oxide thin films for biomedical applications. As a case study coating of a stent which has a complex geometry is presented briefly.

  9. Defect control in room temperature deposited cadmium sulfide thin films by pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Hernandez-Como, N. [Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, TX, 75080 (United States); Martinez-Landeros, V. [Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, TX, 75080 (United States); Centro de Investigación en Materiales Avanzados, Monterrey, Nuevo Leon, 66600, México (Mexico); Mejia, I. [Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, TX, 75080 (United States); Aguirre-Tostado, F.S. [Centro de Investigación en Materiales Avanzados, Monterrey, Nuevo Leon, 66600, México (Mexico); Nascimento, C.D.; Azevedo, G. de M; Krug, C. [Instituto de Física, Universidade Federal do Rio Grande do Sul, Porto Alegre, 91509-900 (Brazil); Quevedo-Lopez, M.A., E-mail: mquevedo@utdallas.edu [Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, TX, 75080 (United States)

    2014-01-01

    The control of defects in cadmium sulfide thin films and its impact on the resulting CdS optical and electrical characteristics are studied. Sulfur vacancies and cadmium interstitial concentrations in the CdS films are controlled using the ambient pressure during pulsed laser deposition. CdS film resistivities ranging from 10{sup −1} to 10{sup 4} Ω-cm are achieved. Hall Effect measurements show that the carrier concentration ranges from 10{sup 19} to 10{sup 13} cm{sup −3} and is responsible for the observed resistivity variation. Hall mobility varies from 2 to 12 cm{sup 2}/V-s for the same pressure regime. Although the energy bandgap remains unaffected (∼ 2.42 eV), the optical transmittance is reduced due to the increase of defects in the CdS films. Rutherford back scattering spectroscopy shows the dependence of the CdS films stoichiometry with deposition pressure. The presence of CdS defects is attributed to more energetic species reaching the substrate, inducing surface damage in the CdS films during pulsed laser deposition. - Highlights: • CdS thin films deposited by pulsed laser deposition at room temperature. • The optical, electrical and structural properties were evaluated. • Carrier concentration ranged from 10{sup 19} to 10{sup 13} cm{sup −3}. • The chemical composition was studied by Rutherford back scattering. • The density of sulfur vacancies and cadmium interstitial was varied.

  10. Defect control in room temperature deposited cadmium sulfide thin films by pulsed laser deposition

    International Nuclear Information System (INIS)

    Hernandez-Como, N.; Martinez-Landeros, V.; Mejia, I.; Aguirre-Tostado, F.S.; Nascimento, C.D.; Azevedo, G. de M; Krug, C.; Quevedo-Lopez, M.A.

    2014-01-01

    The control of defects in cadmium sulfide thin films and its impact on the resulting CdS optical and electrical characteristics are studied. Sulfur vacancies and cadmium interstitial concentrations in the CdS films are controlled using the ambient pressure during pulsed laser deposition. CdS film resistivities ranging from 10 −1 to 10 4 Ω-cm are achieved. Hall Effect measurements show that the carrier concentration ranges from 10 19 to 10 13 cm −3 and is responsible for the observed resistivity variation. Hall mobility varies from 2 to 12 cm 2 /V-s for the same pressure regime. Although the energy bandgap remains unaffected (∼ 2.42 eV), the optical transmittance is reduced due to the increase of defects in the CdS films. Rutherford back scattering spectroscopy shows the dependence of the CdS films stoichiometry with deposition pressure. The presence of CdS defects is attributed to more energetic species reaching the substrate, inducing surface damage in the CdS films during pulsed laser deposition. - Highlights: • CdS thin films deposited by pulsed laser deposition at room temperature. • The optical, electrical and structural properties were evaluated. • Carrier concentration ranged from 10 19 to 10 13 cm −3 . • The chemical composition was studied by Rutherford back scattering. • The density of sulfur vacancies and cadmium interstitial was varied

  11. Laser shock processing on microstructure and hardness of polycrystalline cubic boron nitride tools with and without nanodiamond powders

    International Nuclear Information System (INIS)

    Melookaran, Roslyn; Melaibari, Ammar; Deng, Cheng; Molian, Pal

    2012-01-01

    Highlights: ► Laser shock waves hardened polycrystalline cubic boron nitride tools by up to 15%. ► Laser shock waves can build layer-by-layer of nanodiamond to form micro-diamond tools. ► Multiple laser shocks induce significant phase transitions in cBN and nanodiamond. -- Abstract: High amplitude, short duration shock waves created by a 1064 nm, 10 ns Q-switched Nd:YAG laser were used to increase the hardness as well as build successive layers of nanodiamond on sintered polycrystalline cubic boron nitride (PcBN) tools. Multiple scans of laser shocking were applied. Scanning electron microscopy, Raman spectroscopy, Tukon microhardness tester, and optical surface profilometer were used to evaluate the microstructure, phase change, Vicker’s microhardness and surface roughness. Results indicated that laser shock processing of plain PcBN changed the binder concentration, caused phase transition from cubic to hexagonal form, increased the hardness, and almost unaffected surface roughness. Laser shock wave sintering of nanodiamond powders on PcBN resulted in deagglomeration and layer-by-layer build-up of nanoparticles for a thickness of 30 μm inferring that a novel solid freeform technique designated as “shock wave induced freeform technique (SWIFT)” is being discovered for making micro-tools. Depending on the number of multiple laser shocks, the hardness of nanodiamond compact was lower or higher than that of PcBN. It is hypothesized that nanodiamond particles could serve as crack deflectors, increasing the fracture toughness of PcBN.

  12. Enhanced field emission characteristics of boron doped diamond films grown by microwave plasma assisted chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Koinkar, Pankaj M. [Center for International Cooperation in Engineering Education (CICEE), University of Tokushima, 2-1 Minami-josanjima-cho, Tokushima 770-8506 (Japan); Patil, Sandip S. [Center for Advanced Studies in Materials Science and Condensed Matter Physics, Department of Physics, University of Pune, Pune 411007 (India); Kim, Tae-Gyu [Department of Nano System and Process Engineering, Pusan National University, 50 Cheonghak-ri, Samrangjin-eup, Miryang, Gyeongnam, Pusan 627-706 (Korea, Republic of); Yonekura, Daisuke [Department of Mechanical Engineering, University of Tokushima, 2-1 Minami-josanjima-cho, Tokushima 770-8506 (Japan); More, Mahendra A., E-mail: mam@physics.unipune.ac.in [Center for Advanced Studies in Materials Science and Condensed Matter Physics, Department of Physics, University of Pune, Pune 411007 (India); Joag, Dilip S. [Center for Advanced Studies in Materials Science and Condensed Matter Physics, Department of Physics, University of Pune, Pune 411007 (India); Murakami, Ri-ichi, E-mail: murakami@me.tokushima-u.ac.jp [Department of Mechanical Engineering, University of Tokushima, 2-1 Minami-josanjima-cho, Tokushima 770-8506 (Japan)

    2011-01-01

    Boron doped diamond films were synthesized on silicon substrates by microwave plasma chemical vapor deposition (MPCVD) technique. The effect of B{sub 2}O{sub 3} concentration varied from 1000 to 5000 ppm on the field emission characteristics was examined. The surface morphology and quality of films were characterized by scanning electron microscope (SEM) and Raman spectroscopy. The surface morphology obtained by SEM showed variation from facetted microcrystal covered with nanometric grains to cauliflower of nanocrystalline diamond (NCD) particles with increasing B{sub 2}O{sub 3} concentration. The Raman spectra confirm the formation of NCD films. The field emission properties of NCD films were observed to improve upon increasing boron concentration. The values of the onset field and threshold field are observed to be as low as 0.36 and 0.08 V/{mu}m, respectively. The field emission current stability investigated at the preset value of {approx}1 {mu}A is observed to be good, in each case. The enhanced field emission properties are attributed to the better electrical conductivity coupled with the nanometric features of the diamond films.

  13. Amorphous Terfenol-D films using nanosecond pulsed laser deposition

    International Nuclear Information System (INIS)

    Ma, James; O'Brien, Daniel T.; Kovar, Desiderio

    2009-01-01

    Thin films of Terfenol-D were produced by nanosecond pulsed laser deposition (PLD) at two fluences. Electron dispersive spectroscopy conducted using scanning electron and transmission electron microscopes showed that the film compositions were similar to that of the PLD target. Contrary to previous assertions that suggested that nanosecond PLD results in crystalline films, X-ray diffraction and transmission electron microscopy analysis showed that the films produced at both fluences were amorphous. Splatters present on the film had similar compositions to the overall film and were also amorphous. Magnetic measurements showed that the films had high saturation magnetization and magnetostriction, similar to high quality films produced using other physical vapor deposition methods.

  14. Pulsed laser deposition and characterization of cellulase thin films

    Science.gov (United States)

    Cicco, N.; Morone, A.; Verrastro, M.; Viggiano, V.

    2013-08-01

    Thin films of cellulase were obtained by pulsed laser deposition (PLD) on an appropriate substrate. Glycoside hydrolase cellulase has received our attention because it emerges among the antifouling enzymes (enzymes being able to remove and prevent the formation of micro-organism biofilms) used in industry and medicine field. Pressed cellulase pellets, used as target material, were ablated with pulses of a Nd-YAG laser working at wavelength of 532 nm. In this work, we evaluated the impact of PLD technique both on molecular structure and hydrolytic activity of cellulase. Characteristic chemical bonds and morphology of deposited layers were investigated by FTIR spectroscopy and SEM respectively. The hydrolytic activity of cellulase thin films was detected by a colorimetric assay.

  15. Pulsed laser deposition of high Tc superconducting thin films

    International Nuclear Information System (INIS)

    Singh, R.K.; Narayan, J.

    1990-01-01

    This paper reports on the pulsed laser evaporation (PLE) technique for deposition of thin films characterized by a number of unique properties. Based on the experimental characteristics, a theoretical model is developed which considers the formation and anisotropic three dimensional expansion of the laser generated plasma. This model explains most of the experimental features observed in PLE. We have also employed the PLE technique for in-situ fabrication of YBa 2 Cu 3 O 7 superconducting thin films on different substrates in the temperature range of 500--650 degrees C. At temperatures below 600 degrees C, a biased interposing ring between the substrate and the target was found to significantly improve the superconducting properties. The minimum ion channeling yields were between 3--3.5% for films deposited on (100) SrTiO 3 and (100) LaAlO 3 substrates

  16. Pulsed laser deposition and characterisation of thin superconducting films

    Energy Technology Data Exchange (ETDEWEB)

    Morone, A [CNR, zona industriale di Tito Scalo, Potenza (Italy). Istituto per i Materiali Speciali

    1996-09-01

    Same concepts on pulsed laser deposition of thin films will be discussed and same examples of high transition temperature (HTc) BiSrCaCuO (BISCO) and low transition temperature NbN/MgO/NbN multilayers will be presented. X-ray and others characterizations of these films will be reported and discussed. Electrical properties of superconducting thin films will be realized as a function of structural and morphological aspect.

  17. Numerical modelling of laser rapid prototyping by fusion wire deposit

    OpenAIRE

    Arbaoui , Larbi; Masse , J.E.; Barrallier , Laurent; Mocellin , Katia

    2010-01-01

    International audience; A finite element model has been developed to simulate an innovative laser rapid prototyping process. Several numerical developments have been implemented in order to simulate the main steps of the rapid prototyping process: injection, heating, phase change and deposit. The numerical model also takes into account different phenomena: surface tension in the liquid state, asborptivity and plasma effects during materiallaser interaction. The threedimensional model is based...

  18. Residual stresses in laser direct metal deposited Waspaloy

    International Nuclear Information System (INIS)

    Moat, R.J.; Pinkerton, A.J.; Li, L.; Withers, P.J.; Preuss, M.

    2011-01-01

    Research highlights: → Neutron diffraction and the contour method show good agreement. → Tensile stresses found parallel to the surfaces. → Compressive stresses within the bulk of the structures. → Residual stress weakly dependent on the laser pulse parameters. → Maximum tensile residual stress unaffected across range of pulse parameters used. - Abstract: This paper reports a study into the effect of laser pulse length and duty cycle on the residual stress distributions in multi-track laser direct metal deposits of Waspaloy onto an Inconel 718 substrate. The residual stresses have been evaluated using neutron diffraction and the contour method, while electron microscopy and micro hardness indentation have been used to map the concomitant microstructural variation. In all cases, near the tops of the deposited walls, the longitudinal stresses are tensile towards the mid-length of the wall, while the stresses perpendicular to the substrate are negligible. By contrast near the base of the walls, the stresses along the direction of deposition are small, while the stresses perpendicular to the substrate are compressive at the centre and tensile towards the ends. Consistent with previous observations, the stresses parallel to free surfaces are tensile, balanced by compressive stresses in the interior (an inverse quench stress profile). These profiles have been found to be weakly dependent on the laser pulse parameters, most notably an increase in tensile stress gradient with increasing duty cycle, but the maximum residual stresses are largely unaffected. Furthermore, microstructural analysis has shown that the effect of laser pulse parameters on grain morphology in multi-track thick walls is less marked than previously reported for single-track wall structures.

  19. Residual stresses in laser direct metal deposited Waspaloy

    Energy Technology Data Exchange (ETDEWEB)

    Moat, R.J., E-mail: richard.moat@manchester.ac.uk [School of Materials, University of Manchester, Grosvenor Street, Manchester M1 7HS (United Kingdom); Pinkerton, A.J.; Li, L. [Laser Processing Research Centre, School of Mechanical, Aerospace and Civil Engineering, University of Manchester, M60 1QD (United Kingdom); Withers, P.J.; Preuss, M. [School of Materials, University of Manchester, Grosvenor Street, Manchester M1 7HS (United Kingdom)

    2011-03-15

    Research highlights: {yields} Neutron diffraction and the contour method show good agreement. {yields} Tensile stresses found parallel to the surfaces. {yields} Compressive stresses within the bulk of the structures. {yields} Residual stress weakly dependent on the laser pulse parameters. {yields} Maximum tensile residual stress unaffected across range of pulse parameters used. - Abstract: This paper reports a study into the effect of laser pulse length and duty cycle on the residual stress distributions in multi-track laser direct metal deposits of Waspaloy onto an Inconel 718 substrate. The residual stresses have been evaluated using neutron diffraction and the contour method, while electron microscopy and micro hardness indentation have been used to map the concomitant microstructural variation. In all cases, near the tops of the deposited walls, the longitudinal stresses are tensile towards the mid-length of the wall, while the stresses perpendicular to the substrate are negligible. By contrast near the base of the walls, the stresses along the direction of deposition are small, while the stresses perpendicular to the substrate are compressive at the centre and tensile towards the ends. Consistent with previous observations, the stresses parallel to free surfaces are tensile, balanced by compressive stresses in the interior (an inverse quench stress profile). These profiles have been found to be weakly dependent on the laser pulse parameters, most notably an increase in tensile stress gradient with increasing duty cycle, but the maximum residual stresses are largely unaffected. Furthermore, microstructural analysis has shown that the effect of laser pulse parameters on grain morphology in multi-track thick walls is less marked than previously reported for single-track wall structures.

  20. Boron profiles in doped amorphous-silicon solar cells formed by plasma ion deposition

    International Nuclear Information System (INIS)

    Stoddart, C.T.H.; Hunt, C.P.; Coleman, J.H.

    1979-01-01

    Amorphous silicon p-n junction solar cells of large area (100 cm 2 ) and having a quantum efficiency approaching 100% in the blue region have been prepared by plasma ion-plating, the p layer being formed from diborane and silane gases in a cathode glow-discharge. Surface secondary ion mass spectrometry combined with ion beam etching was found to be a very sensitive method with high in-depth resolution for obtaining the initial boron-silicon profile of the solar cell p-n junction. (author)

  1. Ellipsometric study of nanostructured carbon films deposited by pulsed laser deposition

    International Nuclear Information System (INIS)

    Bereznai, M.; Budai, J.; Hanyecz, I.; Kopniczky, J.; Veres, M.; Koos, M.; Toth, Z.

    2011-01-01

    When depositing carbon films by plasma processes the resulting structure and bonding nature strongly depends on the plasma energy and background gas pressure. To produce different energy plasma, glassy carbon targets were ablated by laser pulses of different excimer lasers: KrF (248 nm) and ArF (193 nm). To modify plume characteristics argon atmosphere was applied. The laser plume was directed onto Si substrates, where the films were grown. To evaluate ellipsometric measurements first a combination of the Tauc-Lorentz oscillator and the Sellmeier formula (TL/S) was applied. Effective Medium Approximation models were also used to investigate film properties. Applying argon pressures above 10 Pa the deposits became nanostructured as indicated by high resolution scanning electron microscopy. Above ∼ 100 and ∼ 20 Pa films could not be deposited by KrF and ArF laser, respectively. Our ellipsometric investigations showed, that with increasing pressure the maximal refractive index of both series decreased, while the optical band gap starts with a decrease, but shows a non monotonous course. Correlation between the size of the nanostructures, bonding structure, which was followed by Raman spectroscopy and optical properties were also investigated.

  2. Comparison of the influence of boron and aluminium doping on the material properties of electrochemically deposited ZnO films

    Energy Technology Data Exchange (ETDEWEB)

    Calnan, Sonya [Helmholtz-Zentrum für Materialien und Energie GmbH, Hahn-Meitner Platz 1, 14109 Berlin (Germany); Riedel, Wiebke; Gledhill, Sophie [Helmholtz-Zentrum für Materialien und Energie GmbH, Hahn-Meitner Platz 1, 14109 Berlin (Germany); Fachbereich Physik, Freie Universitaet Berlin, Arnimallee 14, 14195 Berlin (Germany); Stannowski, Bernd [Helmholtz-Zentrum für Materialien und Energie GmbH, Hahn-Meitner Platz 1, 14109 Berlin (Germany); Lux-Steiner, Martha Ch. [Helmholtz-Zentrum für Materialien und Energie GmbH, Hahn-Meitner Platz 1, 14109 Berlin (Germany); Fachbereich Physik, Freie Universitaet Berlin, Arnimallee 14, 14195 Berlin (Germany); Schlatmann, Rutger [Helmholtz-Zentrum für Materialien und Energie GmbH, Hahn-Meitner Platz 1, 14109 Berlin (Germany); Fachbereich 1 Ingenieurwissenschaften I, University of Applied Science (HTW) Berlin, Wilhelminenhofstraße 75 A, 12459 Berlin (Germany)

    2015-11-02

    The effect of varying the boron and aluminium content of the starting electrolyte for extrinsically doped ZnO films grown on SnO{sub 2}:F substrates by electrochemical deposition was investigated. The ZnO:B film surface was characterized by grains with mainly hexagonal faces exposed while the exposed faces of the ZnO:Al grains were rectangular. Whereas a B{sup 3+}/Zn{sup 2+} ratio of up to 10 at.% in the electrolyte had no significant effect on the crystalline structure of the ZnO films, an Al{sup 3+}/Zn{sup 2+} ratio above 0.25 at.% increased the disorder in the crystalline structure. All the boron doped films exhibit a strong E{sub 2}-high Raman mode related to wurtzite ZnO structure but this peak was much weaker for ZnO:Al and diminished with increasing Al incorporation in the films. Exposing the films to ultra-violet light reduced their effective sheet resistance from values beyond measurement range to values between 40 and 5000 kΩ/sq for film thicknesses of 200–550 nm. Inspection of the optical spectra near the bandgap edge and the plasma edge in the mid infrared range, showed that the Al-doping resulted in a higher carrier concentration ~ 10{sup 20} cm{sup −3} than B-doping. X-ray electron spectroscopy showed that the dopant efficiency was limited by the absence of dopant atoms near the surface of all the ZnO:B films and of the lightly doped ZnO:Al and, by the formation of aluminium oxide at the surface of the more highly doped ZnO:Al films. - Highlights: • Crystalline ZnO grown by electrochemical deposition. • Comparison of influence of H{sub 3}BO{sub 3} and Al(NO{sub 3}){sub 3} as dopant sources. • Different ZnO crystalline orientation for Al and boron doping. • Film surface chemical composition suppressed electrical conductivity.

  3. Laser deposition of coatings for aeronautical and industrials turbine blades

    Energy Technology Data Exchange (ETDEWEB)

    Teleginski, V. [Instituto Federal de Sao Paulo (IFSP), SP (Brazil); Silva, S.A.; Riva, R.; Vasconcelos, G. [Instituto de Estudos Avancados (IEAv), Sao Jose dos Campos, SP (Brazil); Silva Pita, G.R. [Universidade Braz Cubas, Mogi das Cruzes, SP (Brazil); Yamin, L.S. [Escola Tecnica Everardo Passos (ETEP), Sao Jose dos Campos, DP (Brazil)

    2016-07-01

    Full text: Zirconium-based ceramic materials are widely employed as Thermal Barrier Coatings (TBC), due to its excellent wear and corrosion resistance at high temperatures. The application of TBC includes aeronautical and industrials turbine blades. The working conditions include oxidizing environments and temperatures above 1000°C. The zirconium-based ceramics are developed in such a way that the microstructural control is possible through the control of chemical composition, fabrication route and, thermal treatment. The present paper proposes a laser route to deposit the TBC coating, where the microstructural control is a function of power density and interaction time between the laser beam and the material. The main objective of this work is to study the influence of the CO2 laser beam (Synrad Evolution 125) parameters: power density and interaction time, on the deposition process of yttria-stabilized zirconia (YSZ) powders on NiCrAlY/AISI 316L substrates. The resulting coating surface and interface were characterized by scanning electron microscopy, energy dispersive spectroscopy and X-ray diffraction. The results indicate that is possible to match laser parameters of scanning speed and intensity to produce homogenous coatings. The X-Ray analyses show that the obtained ceramic coating has reduced number of phases, with prevalence of tetragonal phase.(author)

  4. History and current status of commercial pulsed laser deposition equipment

    International Nuclear Information System (INIS)

    Greer, James A

    2014-01-01

    This paper will review the history of the scale-up of the pulsed laser deposition (PLD) process from small areas ∼1 cm 2 up to 10 m 2 starting in about 1987. It also documents the history of commercialization of PLD as various companies become involved in selling fully integrated laser deposition tools starting in 1989. The paper will highlight the current state of the art of commercial PLD equipment for R and D that is available on the market today from mainstream vendors as well as production-oriented applications directed at piezo-electric materials for microelectromechanical systems and high-temperature superconductors for coated-conductor applications. The paper clearly demonstrates that considerable improvements have been made to scaling this unique physical vapour deposition process to useful substrate sizes, and that commercial deposition equipment is readily available from a variety of vendors to address a wide variety of technologically important thin-film applications. (paper)

  5. Picosecond and subpicosecond pulsed laser deposition of Pb thin films

    Directory of Open Access Journals (Sweden)

    F. Gontad

    2013-09-01

    Full Text Available Pb thin films were deposited on Nb substrates by means of pulsed laser deposition (PLD with UV radiation (248 nm, in two different ablation regimes: picosecond (5 ps and subpicosecond (0.5 ps. Granular films with grain size on the micron scale have been obtained, with no evidence of large droplet formation. All films presented a polycrystalline character with preferential orientation along the (111 crystalline planes. A maximum quantum efficiency (QE of 7.3×10^{-5} (at 266 nm and 7 ns pulse duration was measured, after laser cleaning, demonstrating good photoemission performance for Pb thin films deposited by ultrashort PLD. Moreover, Pb thin film photocathodes have maintained their QE for days, providing excellent chemical stability and durability. These results suggest that Pb thin films deposited on Nb by ultrashort PLD are a noteworthy alternative for the fabrication of photocathodes for superconductive radio-frequency electron guns. Finally, a comparison with the characteristics of Pb films prepared by ns PLD is illustrated and discussed.

  6. UV pulsed laser deposition of magnetite thin films

    International Nuclear Information System (INIS)

    Parames, M.L.; Mariano, J.; Rogalski, M.S.; Popovici, N.; Conde, O.

    2005-01-01

    Magnetite thin films were grown by pulsed laser deposition in O 2 reactive atmosphere from Fe 3 O 4 targets. The ablated material was deposited onto Si(1 0 0) substrates at various temperatures up to 623 K. The temperature dependence of structure and stoichiometry was investigated by X-ray diffraction (XRD) and conversion electron Moessbauer spectroscopy (CEMS). The XRD results show that films grown between 483 and 623 K are obtained as pure phase magnetite with an estimated average crystallite size increasing from 14 to 35 nm, respectively. This is in agreement with the CEMS spectra analysis, indicating isomer shift and internal field values for both the T d and O h sites close to those reported for the bulk material and a random orientation of the magnetic moments. The influence of the deposition temperature on the estimated Fe (9-x)/3 O 4 stoichiometry is related to an increase in the vacancy concentration from 483 to 623 K

  7. Resonant infrared pulsed laser deposition of a polyimide precursor

    Energy Technology Data Exchange (ETDEWEB)

    Dygert, N L; Schriver, K E; Jr, R F Haglund [Department of Physics and Astronomy and W M Keck Foundation Free-Electron Laser Centre, Vanderbilt University, Nashville TN 37235 (United States)

    2007-04-15

    Poly(amic acid) (PAA), a precursor to polyimide, was successfully deposited on substrates without reaching curing temperature, by resonant infrared pulsed laser ablation. The PAA was prepared by dissolving pyromellitic dianhydride and 4, 4' oxidianiline in the polar solvent Nmethyl pyrrolidinone (NMP). The PAA was deposited in droplet-like morphologies when ablation occurred in air, and in string-like moieties in the case of ablation in vacuum. In the as-deposited condition, the PAA was easily removed by washing with NMP; however, once cured thermally for thirty minutes, the PAA hardened, indicating the expected thermosetting property. Plume shadowgraphy showed very clear contrasts in the ablation mechanism between ablation of the solvent alone and the ablation of the PAA, even at low concentrations. A Wavelength dependence in plume velocity was also observed.

  8. Hydroxyapatite thin films grown by pulsed laser deposition and matrix assisted pulsed laser evaporation: Comparative study

    Science.gov (United States)

    Popescu-Pelin, G.; Sima, F.; Sima, L. E.; Mihailescu, C. N.; Luculescu, C.; Iordache, I.; Socol, M.; Socol, G.; Mihailescu, I. N.

    2017-10-01

    Pulsed Laser Deposition (PLD) and Matrix Assisted Pulsed Laser Evaporation (MAPLE) techniques were applied for growing hydroxyapatite (HA) thin films on titanium substrates. All experiments were conducted in a reaction chamber using a KrF* excimer laser source (λ = 248 nm, τFWHM ≈ 25 ns). Half of the samples were post-deposition thermally treated at 500 °C in a flux of water vapours in order to restore crystallinity and improve adherence. Coating surface morphologies and topographies specific to the deposition method were evidenced by scanning electron, atomic force microscopy investigations and profilometry. They were shown to depend on deposition technique and also on the post-deposition treatment. Crystalline structure of the coatings evaluated by X-ray diffraction was improved after thermal treatment. Biocompatibility of coatings, cellular adhesion, proliferation and differentiation tests were conducted using human mesenchymal stem cells (MSCs). Results showed that annealed MAPLE deposited HA coatings were supporting MSCs proliferation, while annealed PLD obtained films were stimulating osteogenic differentiation.

  9. Electronic response of a photodiode coupled to a boron thin film

    Energy Technology Data Exchange (ETDEWEB)

    Costa, Priscila; Costa, Fabio E.; Raele, Marcus P.; Zahn, Guilherme S.; Geraldo, Bianca; Vieira Junior, Nilson D.; Samad, Ricardo E.; Genezini, Frederico A., E-mail: priscila3.costa@usp.br, E-mail: fredzini@ipen.br [Instituto de Pesquisas Energéticas e Nucleares (IPEN/CNEN-SP), São Paulo, SP (Brazil)

    2017-07-01

    A portable thermal neutron detector is proposed in this work using a silicon photodiode coupled to a boron thin film. The aim of this work was to verify the effect in the electronic response of this specific photodiode due to boron deposition, since the direct deposition of boron in the semiconductor surface could affect its electrical properties specifically the p-type layer that affects directly the depletion region of the semiconductor reducing the neutron detector efficiency count. Three boron depositions with different thickness were performed in the photodiode (S3590-09) surface by pulsed laser deposition and the photodiode was characterized, before and after the deposition process, using a radioactive americium source. Energy spectra were used to verify the electronic response of the photodiode, due to the fact that it is possible to relate it to the photopeak pulse height and resolution. Spectra from the photodiode without and with boron film deposition were compared and a standard photodiode (S3590-04) that had the electronic signal conserved was used as reference to the pulse height for electronics adjustments. The photopeak energy resolution for the photodiode without boron layer was 10.26%. For the photodiode with boron deposition at different thicknesses, the resolution was: 7.64 % (0.14 μm), 7.30 % (0.44 μm) and 6.80 % (0.63 μm). From these results it is possible to evaluate that there was not any degradation in the silicon photodiode. (author)

  10. Study on excimer laser irradiation for controlled dehydrogenation and crystallization of boron doped hydrogenated amorphous/nanocrystalline silicon multilayers

    International Nuclear Information System (INIS)

    Gontad, F.; Conde, J.C.; Filonovich, S.; Cerqueira, M.F.; Alpuim, P.; Chiussi, S.

    2013-01-01

    We report on the excimer laser annealing (ELA) induced temperature gradients, allowing controlled crystallization and dehydrogenation of boron-doped a-Si:H/nc-Si:H multilayers. Depth of the dehydrogenation and crystallization process has been studied numerically and experimentally, showing that temperatures below the monohydride decomposition can be used and that significant changes of the doping profile can be avoided. Calculation of temperature profiles has been achieved through numerical modeling of the heat conduction differential equation. Increase in the amount of nano-crystals, but not in their size, has been demonstrated by Raman spectroscopy. Effective dehydrogenation and shape of the boron profile have been studied by time of flight secondary ion mass spectroscopy. The relatively low temperature threshold for dehydrogenation, below the monohydride decomposition temperature, has been attributed to both, the large hydrogen content of the original films and the partial crystallization during the ELA process. The results of this study show that UV-laser irradiation is an effective tool to improve crystallinity and dopant activation in p + -nc-Si:H films without damaging the substrate. - Highlights: • An efficient dehydrogenation is possible through excimer laser annealing. • 140 mJ/cm 2 is enough for dehydrogenation without significant changes in doping profile. • Fluences up to 300 mJ/cm 2 promote partial crystallization of the amorphous structures

  11. Study on excimer laser irradiation for controlled dehydrogenation and crystallization of boron doped hydrogenated amorphous/nanocrystalline silicon multilayers

    Energy Technology Data Exchange (ETDEWEB)

    Gontad, F., E-mail: fran_gontad@yahoo.es [Applied Physics Department, University of Vigo, E.I. Industrial, Campus de As Lagoas, Marcosende, E-36310, Vigo (Spain); Conde, J.C. [Applied Physics Department, University of Vigo, E.I. Industrial, Campus de As Lagoas, Marcosende, E-36310, Vigo (Spain); Filonovich, S.; Cerqueira, M.F.; Alpuim, P. [Department of Physics, University of Minho, Campus de Azurém, 4800-058 Guimarães (Portugal); Chiussi, S. [Applied Physics Department, University of Vigo, E.I. Industrial, Campus de As Lagoas, Marcosende, E-36310, Vigo (Spain)

    2013-06-01

    We report on the excimer laser annealing (ELA) induced temperature gradients, allowing controlled crystallization and dehydrogenation of boron-doped a-Si:H/nc-Si:H multilayers. Depth of the dehydrogenation and crystallization process has been studied numerically and experimentally, showing that temperatures below the monohydride decomposition can be used and that significant changes of the doping profile can be avoided. Calculation of temperature profiles has been achieved through numerical modeling of the heat conduction differential equation. Increase in the amount of nano-crystals, but not in their size, has been demonstrated by Raman spectroscopy. Effective dehydrogenation and shape of the boron profile have been studied by time of flight secondary ion mass spectroscopy. The relatively low temperature threshold for dehydrogenation, below the monohydride decomposition temperature, has been attributed to both, the large hydrogen content of the original films and the partial crystallization during the ELA process. The results of this study show that UV-laser irradiation is an effective tool to improve crystallinity and dopant activation in p{sup +}-nc-Si:H films without damaging the substrate. - Highlights: • An efficient dehydrogenation is possible through excimer laser annealing. • 140 mJ/cm{sup 2} is enough for dehydrogenation without significant changes in doping profile. • Fluences up to 300 mJ/cm{sup 2} promote partial crystallization of the amorphous structures.

  12. Electroreduction of CO{sub 2} using copper-deposited on boron-doped diamond (BDD)

    Energy Technology Data Exchange (ETDEWEB)

    Panglipur, Hanum Sekar; Ivandini, Tribidasari A., E-mail: ivandini.tri@sci.ui.ac.id [Department of Chemistry, FMIPA, Universitas Indonesia, Kampus UI Depok (Indonesia); Einaga, Yasuaki [Department of Chemistry, Keio University (Japan); Wibowo, Rahmat

    2016-04-19

    Electroreduction of CO{sub 2} was studied at copper-modified boron-doped diamond (Cu-BDD) electrodes as the working electrode. The Cu-BDD electrodes were prepared by electrochemical reduction with various concentrations of CuSO{sub 4} solutions. FE-SEM was utilized to characterize the electrodes. At Cu-BDD electrodes, a reduction peak at around -1.2 V (vs Ag/AgCl) attributtable to CO{sub 2} reductions could be observed by cyclic voltammetry technique of CO{sub 2} bubbled in water containing 0.1M NaCl. Accordingly, electroreduction of CO{sub 2} was conducted at -1.2 V (vs Ag/AgCl) using amperometry technique. The chemical products of the electroreduction analyzed by using HPLC showed the formation of formaldehyde, formic acid, and acetic acid at Cu-BDD electrodes.

  13. Electroless deposition of nickel-boron coatings using low frequency ultrasonic agitation: Effect of ultrasonic frequency on the coatings.

    Science.gov (United States)

    Bonin, L; Bains, N; Vitry, V; Cobley, A J

    2017-05-01

    The effect of ultrasound on the properties of Nickel-Boron (NiB) coatings was investigated. NiB coatings were fabricated by electroless deposition using either ultrasonic or mechanical agitation. The deposition of Ni occurred in an aqueous bath containing a reducible metal salt (nickel chloride), reducing agent (sodium borohydride), complexing agent (ethylenediamine) and stabilizer (lead tungstate). Due to the instability of the borohydride in acidic, neutral and slightly alkaline media, pH was controlled at pH 12±1 in order to avoid destabilizing the bath. Deposition was performed in three different configurations: one with a classical mechanical agitation at 300rpm and the other two employing ultrasound at a frequency of either 20 or 35kHz. The microstructures of the electroless coatings were characterized by a combination of optical Microscopy and Scanning Electron Microscope (SEM). The chemistry of the coatings was determined by ICP-AES (Inductively Coupled Plasma - Atomic Emission Spectrometry) after dissolution in aqua regia. The mechanical properties of the coatings were established by a combination of roughness measurements, Vickers microhardness and pin-on-disk tribology tests. Lastly, the corrosion properties were analysed by potentiodynamic polarization. The results showed that low frequency ultrasonic agitation could be used to produce coatings from an alkaline NiB bath and that the thickness of coatings obtained could be increased by over 50% compared to those produced using mechanical agitation. Although ultrasonic agitation produced a smoother coating and some alteration of the deposit morphology was observed, the mechanical and corrosion properties were very similar to those found when using mechanical agitation. Copyright © 2017 Elsevier B.V. All rights reserved.

  14. Aluminosilicate glass thin films elaborated by pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Carlier, Thibault [Univ. Lille, CNRS, Centrale Lille, ENSCL, Univ. Artois, UMR 8181 – UCCS – Unité de Catalyse et Chimie du Solide, F-59000 Lille (France); Saitzek, Sébastien [Univ. Artois, CNRS, Centrale Lille, ENSCL, Univ. Lille, UMR 8181, Unité de Catalyse et de Chimie du Solide (UCCS), F-62300 Lens (France); Méar, François O., E-mail: francois.mear@univ-lille1.fr [Univ. Lille, CNRS, Centrale Lille, ENSCL, Univ. Artois, UMR 8181 – UCCS – Unité de Catalyse et Chimie du Solide, F-59000 Lille (France); Blach, Jean-François; Ferri, Anthony [Univ. Artois, CNRS, Centrale Lille, ENSCL, Univ. Lille, UMR 8181, Unité de Catalyse et de Chimie du Solide (UCCS), F-62300 Lens (France); Huvé, Marielle; Montagne, Lionel [Univ. Lille, CNRS, Centrale Lille, ENSCL, Univ. Artois, UMR 8181 – UCCS – Unité de Catalyse et Chimie du Solide, F-59000 Lille (France)

    2017-03-01

    Highlights: • Successfully deposition of a glassy thin film by PLD. • A good homogeneity and stoichiometry of the coating. • Influence of the deposition temperature on the glassy thin-film structure. - Abstract: In the present work, we report the elaboration of aluminosilicate glass thin films by Pulsed Laser Deposition at various temperatures deposition. The amorphous nature of glass thin films was highlighted by Grazing Incidence X-Ray Diffraction and no nanocristallites were observed in the glassy matrix. Chemical analysis, obtained with X-ray Photoelectron Spectroscopy and Time of Flight Secondary Ion Mass Spectroscopy, showed a good transfer and homogeneous elementary distribution with of chemical species from the target to the film a. Structural studies performed by Infrared Spectroscopy showed that the substrate temperature plays an important role on the bonding configuration of the layers. A slight shift of Si-O modes to larger wavenumber was observed with the synthesis temperature, assigned to a more strained sub-oxide network. Finally, optical properties of thins film measured by Spectroscopic Ellipsometry are similar to those of the bulk aluminosilicate glass, which indicate a good deposition of aluminosilicate bulk glass.

  15. Deposition and characterization of ITO films produced by laser ablation at 355 nm

    DEFF Research Database (Denmark)

    Holmelund, E.; Thestrup Nielsen, Birgitte; Schou, Jørgen

    2002-01-01

    Indium tin oxide (ITO) films have been deposited by pulsed laser deposition (PLD) at 355 nm. Even though the absorption of laser light at the wavelength 355 nm is much smaller than that of the standard excimer lasers for PLD at 248 nm and 193 nm, high-quality films can be produced. At high fluence...

  16. Novel doped hydroxyapatite thin films obtained by pulsed laser deposition

    International Nuclear Information System (INIS)

    Duta, L.; Oktar, F.N.; Stan, G.E.; Popescu-Pelin, G.; Serban, N.; Luculescu, C.; Mihailescu, I.N.

    2013-01-01

    Highlights: ► HA coatings synthesized by pulsed laser deposition. ► Comparative study of commercial vs. animal origin materials. ► HA coatings of animal origin were rougher and more adherent to substrates. ► Animal origin films can be considered as promising candidates for implant coatings. - Abstract: We report on the synthesis of novel ovine and bovine derived hydroxyapatite thin films on titanium substrates by pulsed laser deposition for a new generation of implants. The calcination treatment applied to produce the hydroxyapatite powders from ovine/bovine bones was intended to induce crystallization and to prohibit the transmission of diseases. The deposited films were characterized by scanning electron microscopy, X-ray diffraction, Fourier transform infrared spectroscopy, and energy dispersive X-ray spectroscopy. Pull-off adherence and profilometry measurements were also carried out. X-ray diffraction ascertained the polycrystalline hydroxyapatite nature of the powders and films. Fourier transform infrared spectroscopy evidenced the vibrational bands characteristic to a hydroxyapatite material slightly carbonated. The micrographs of the films showed a uniform distribution of spheroidal particulates with a mean diameter of ∼2 μm. Pull-off measurements demonstrated excellent bonding strength values between the hydroxyapatite films and the titanium substrates. Because of their physical–chemical properties and low cost fabrication from renewable resources, we think that these new coating materials could be considered as a prospective competitor to synthetic hydroxyapatite used for implantology applications.

  17. The influences of target properties and deposition times on pulsed laser deposited hydroxyapatite films

    International Nuclear Information System (INIS)

    Bao Quanhe; Chen Chuanzhong; Wang Diangang; Liu Junming

    2008-01-01

    Hydroxyapatite films were produced by pulsed laser deposition from three kinds of hydroxyapatite targets and with different deposition times. A JXA-8800R electron probe microanalyzer (EPMA) with a Link ISIS300 energy spectrum analyzer was used to give the secondary electron image (SE) and determine the element composition of the films. The phases of thin film were analyzed by a D/max-γc X-ray diffractometer (XRD). The Fourier-transform infrared spectroscopy (FT-IR) was used to characterize the hydroxyl, phosphate and other functional groups. The results show that deposited films were amorphous which mainly composed of droplet-like particles and vibration of PO 4 3- groups. With the target sintering temperature deposition times increasing, the density of droplets is decreased. While with deposition times increasing, the density of droplets is increased. With the target sintering temperature and deposition time increasing, the ratio of Ca/P is increasing and higher than that of theoretical value of HA

  18. Laser ablation and deposition of wide bandgap semiconductors: plasma and nanostructure of deposits diagnosis

    Science.gov (United States)

    Sanz, M.; López-Arias, M.; Rebollar, E.; de Nalda, R.; Castillejo, M.

    2011-12-01

    Nanostructured CdS and ZnS films on Si (100) substrates were obtained by nanosecond pulsed laser deposition at the wavelengths of 266 and 532 nm. The effect of laser irradiation wavelength on the surface structure and crystallinity of deposits was characterized, together with the composition, expansion dynamics and thermodynamic parameters of the ablation plume. Deposits were analyzed by environmental scanning electron microscopy, atomic force microscopy and X-ray diffraction, while in situ monitoring of the plume was carried out with spectral, temporal and spatial resolution by optical emission spectroscopy. The deposits consist of 25-50 nm nanoparticle assembled films but ablation in the visible results in larger aggregates (150 nm) over imposed on the film surface. The aggregate free films grown at 266 nm on heated substrates are thicker than those grown at room temperature and in the former case they reveal a crystalline structure congruent with that of the initial target material. The observed trends are discussed in reference to the light absorption step, the plasma composition and the nucleation processes occurring on the substrate.

  19. Time-resolved diagnostics of excimer laser-generated ablation plasmas used for pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Geohegan, D.B.

    1994-09-01

    Characteristics of laser plasmas used for pulsed laser deposition (PLD) of thin films are examined with four in situ diagnostic techniques: Optical emission spectroscopy, optical absorption spectroscopy, ion probe studies, and gated ICCD (intensified charge-coupled-device array) fast photography. These four techniques are complementary and permit simultaneous views of the transport of ions, excited states, ground state neutrals and ions, and hot particulates following KrF laser ablation of YBCO, BN, graphite and Si in vacuum and background gases. The implementation and advantages of the four techniques are first described in order to introduce the key features of laser plasmas for pulsed laser deposition. Aspects of the interaction of the ablation plume with background gases (i.e., thermalization, attenuation, shock formation) and the collision of the plasma plume with the substrate heater are then summarized. The techniques of fast ICCD photography and gated photon counting are then applied to investigate the temperature, velocity, and spatial distribution of hot particles generated during KrF ablation of YBCO, BN, Si and graphite. Finally, key features of fast imaging of the laser ablation of graphite into high pressure rare gases are presented in order to elucidate internal reflected shocks within the plume, redeposition of material on a surface, and formation of hot nanoparticles within the plume.

  20. Time-resolved diagnostics of excimer laser-generated ablation plasmas used for pulsed laser deposition

    International Nuclear Information System (INIS)

    Geohegan, D.B.

    1994-01-01

    Characteristics of laser plasmas used for pulsed laser deposition (PLD) of thin films are examined with four in situ diagnostic techniques: Optical emission spectroscopy, optical absorption spectroscopy, ion probe studies, and gated ICCD (intensified charge-coupled-device array) fast photography. These four techniques are complementary and permit simultaneous views of the transport of ions, excited states, ground state neutrals and ions, and hot particulates following KrF laser ablation of YBCO, BN, graphite and Si in vacuum and background gases. The implementation and advantages of the four techniques are first described in order to introduce the key features of laser plasmas for pulsed laser deposition. Aspects of the interaction of the ablation plume with background gases (i.e., thermalization, attenuation, shock formation) and the collision of the plasma plume with the substrate heater are then summarized. The techniques of fast ICCD photography and gated photon counting are then applied to investigate the temperature, velocity, and spatial distribution of hot particles generated during KrF ablation of YBCO, BN, Si and graphite. Finally, key features of fast imaging of the laser ablation of graphite into high pressure rare gases are presented in order to elucidate internal reflected shocks within the plume, redeposition of material on a surface, and formation of hot nanoparticles within the plume

  1. Study of liquid deposition during laser printing of liquids

    Energy Technology Data Exchange (ETDEWEB)

    Duocastella, M.; Patrascioiu, A. [Universitat de Barcelona, Departament de Fisica Aplicada i Optica, Marti i Franques 1, E-08028 Barcelona (Spain); Dinca, V. [Universitat de Barcelona, Departament de Fisica Aplicada i Optica, Marti i Franques 1, E-08028 Barcelona (Spain); National Institute for Lasers, Plasma and Radiation Physics, Atomistilor No. 409, PO Box MG 16, 077125 Bucharest (Romania); Fernandez-Pradas, J.M.; Morenza, J.L. [Universitat de Barcelona, Departament de Fisica Aplicada i Optica, Marti i Franques 1, E-08028 Barcelona (Spain); Serra, P., E-mail: pserra@ub.edu [Universitat de Barcelona, Departament de Fisica Aplicada i Optica, Marti i Franques 1, E-08028 Barcelona (Spain)

    2011-04-01

    Laser-induced forward transfer (LIFT) is a direct-writing technique which can be used to successfully print various complex and sensitive materials with a high degree of spatial resolution. However, the optimization of its performances requires a deep understanding of the LIFT dynamics. Such understanding should allow correlating the phenomena underlying the liquid transfer process with the morphology of the obtained deposits. To this end, in this work it is presented a study related to two aspects: first, the correlation of the morphological characteristics of the transferred droplets with the variation of the film thickness combined with laser fluence; and second, a correlation of the dependences observed with the dynamics of the transfer process. The work is focused on the understanding of the observed dependences for which the information provided by time-resolved analysis on liquid transfer dynamics has proved to be crucial.

  2. Study of liquid deposition during laser printing of liquids

    International Nuclear Information System (INIS)

    Duocastella, M.; Patrascioiu, A.; Dinca, V.; Fernandez-Pradas, J.M.; Morenza, J.L.; Serra, P.

    2011-01-01

    Laser-induced forward transfer (LIFT) is a direct-writing technique which can be used to successfully print various complex and sensitive materials with a high degree of spatial resolution. However, the optimization of its performances requires a deep understanding of the LIFT dynamics. Such understanding should allow correlating the phenomena underlying the liquid transfer process with the morphology of the obtained deposits. To this end, in this work it is presented a study related to two aspects: first, the correlation of the morphological characteristics of the transferred droplets with the variation of the film thickness combined with laser fluence; and second, a correlation of the dependences observed with the dynamics of the transfer process. The work is focused on the understanding of the observed dependences for which the information provided by time-resolved analysis on liquid transfer dynamics has proved to be crucial.

  3. Pulsed laser deposition of ITO thin films and their characteristics

    International Nuclear Information System (INIS)

    Zuev, D. A.; Lotin, A. A.; Novodvorsky, O. A.; Lebedev, F. V.; Khramova, O. D.; Petuhov, I. A.; Putilin, Ph. N.; Shatohin, A. N.; Rumyanzeva, M. N.; Gaskov, A. M.

    2012-01-01

    The indium tin oxide (ITO) thin films are grown on quartz glass substrates by the pulsed laser deposition method. The structural, electrical, and optical properties of ITO films are studied as a function of the substrate temperature, the oxygen pressure in the vacuum chamber, and the Sn concentration in the target. The transmittance of grown ITO films in the visible spectral region exceeds 85%. The minimum value of resistivity 1.79 × 10 −4 Ω cm has been achieved in the ITO films with content of Sn 5 at %.

  4. Functionally Graded Materials by Laser Metal Deposition (PREPRINT)

    Science.gov (United States)

    2010-03-01

    composition of Fe-82 wt% V (powder-1) and Inconel - 625 (powder-2) powders are listed in Table 1. The substrate materials used for the experiment were cold...like laser power, travel speed and powder feed rate is yet to be determined to obtain a successful FGM. Inconel - 625 deposits showed macro-cracks...Composition (wt%) Powder-1: Fe-82 wt% V V (82), Al (0.68), Si (0.9), C (0.07), S (0.01), P (0.02), Fe (18) Powder-2: Inconel - 625 Ni (58), Cr (20-23

  5. WOx cluster formation in radio frequency assisted pulsed laser deposition

    International Nuclear Information System (INIS)

    Filipescu, M.; Ossi, P.M.; Dinescu, M.

    2007-01-01

    The influence of oxygen gas pressure and radio-frequency power on the characteristics of the WO x films produced by laser ablation of a W target at room temperature in oxygen reactive atmosphere were investigated. Changing buffer gas pressure in the hundreds of Pa range affects the bond coordination, roughness and morphology of the deposited films, as investigated by micro-Raman spectroscopy, atomic force microscopy and scanning electron microscopy. The combination of radio-frequency discharge and buffer gas pressure on film nanostructure, as reflected by bond coordination, surface morphology and roughness is discussed

  6. Thin solid films deposited by pulsed laser ablating spray

    International Nuclear Information System (INIS)

    Song Guangle

    2002-01-01

    The fabricating technique of thin solid films deposited by pulsed laser ablating spray is a new technique. The background from which it came into being and the process of its evolution were briefly described. According to relative documents, basic principle of the technique was dwelt on. Based on the latest documents, the status quo, including the studying abroad and home, was discussed in detail. The advantages, shortcomings, prospect of its utility, the significance of studying as well as critic problems were summarized. Some proposal was suggested

  7. Defects in zinc oxide grown by pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Ling, Francis C.C., E-mail: ccling@hku.hk [Department of Physics, The University of Hong Kong, Pokfulam Road, Hong Kong (China); Wang, Zilan; Ping Ho, Lok; Younas, M. [Department of Physics, The University of Hong Kong, Pokfulam Road, Hong Kong (China); Anwand, W.; Wagner, A. [Institute of Radiation Physics, Helmholtz-Zentrum Dresden-Rossendorf, Bautzner Landstr. 400, 01328 Dresden (Germany); Su, S.C. [Institute of Optoelectronic Material and Technology, South China Normal University, Guangzhou 510631 (China); Shan, C.X. [State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033 (China)

    2016-01-01

    ZnO films are grown on c-plane sapphire using the pulsed laser deposition method. Systematic studies on the effects of annealing are performed to understand the thermal evolutions of the defects in the films. Particular attention is paid to the discussions of the ZnO/sapphire interface thermal stability, the Zn-vacancy related defects having different microstructures, the origins of the green luminescence (∼2.4–2.5 eV) and the near band edge (NBE) emission at 3.23 eV.

  8. Enhanced Tunnel Spin Injection into Graphene using Chemical Vapor Deposited Hexagonal Boron Nitride

    Science.gov (United States)

    Kamalakar, M. Venkata; Dankert, André; Bergsten, Johan; Ive, Tommy; Dash, Saroj P.

    2014-01-01

    The van der Waals heterostructures of two-dimensional (2D) atomic crystals constitute a new paradigm in nanoscience. Hybrid devices of graphene with insulating 2D hexagonal boron nitride (h-BN) have emerged as promising nanoelectronic architectures through demonstrations of ultrahigh electron mobilities and charge-based tunnel transistors. Here, we expand the functional horizon of such 2D materials demonstrating the quantum tunneling of spin polarized electrons through atomic planes of CVD grown h-BN. We report excellent tunneling behavior of h-BN layers together with tunnel spin injection and transport in graphene using ferromagnet/h-BN contacts. Employing h-BN tunnel contacts, we observe enhancements in both spin signal amplitude and lifetime by an order of magnitude. We demonstrate spin transport and precession over micrometer-scale distances with spin lifetime up to 0.46 nanosecond. Our results and complementary magnetoresistance calculations illustrate that CVD h-BN tunnel barrier provides a reliable, reproducible and alternative approach to address the conductivity mismatch problem for spin injection into graphene. PMID:25156685

  9. Roughness evolution in Ga doped ZnO films deposited by pulsed laser deposition

    International Nuclear Information System (INIS)

    Liu Yunyan; Cheng Chuanfu; Yang Shanying; Song Hongsheng; Wei Gongxiang; Xue Chengshan; Wang Yongzai

    2011-01-01

    We analyze the morphology evolution of the Ga doped ZnO(GZO) films deposited on quartz substrates by a laser deposition system. The surface morphologies of the film samples grown with different times are measured by the atomic force microscope, and they are analyzed quantitatively by using the image data. In the initial stage of the growth time shorter than 8 min, our analysis shows that the GZO surface morphologies are influenced by such factors as the random fluctuations, the smoothening effects in the deposition, the lateral strain and the substrate. The interface width uw(t) and the lateral correlation length ξ(t) at first decrease with deposition time t. For the growth time larger than 8 min, w(t) and ξ(t) increase with time and it indicates the roughening of the surface and the surface morphology exhibits the fractal characteristics. By fitting data of the roughness w(t) versus deposition time t larger than 4 min to the power-law function, we obtain the growth exponent β is 0.3; and by the height-height correlation functions of the samples to that of the self-affine fractal model, we obtain the value of roughness exponent α about 0.84 for all samples with different growth time t.

  10. In-situ CdS/CdTe Heterojuntions Deposited by Pulsed Laser Deposition

    KAUST Repository

    Avila-Avendano, Jesus

    2016-04-09

    In this paper pulsed laser deposition (PLD) methods are used to study p-n CdTe/CdS heterojunctions fabricated in-situ. In-situ film deposition allows higher quality p-n interfaces by minimizing spurious contamination from the atmosphere. Morphologic and structural analyses were carried for CdTe films deposited on various substrates and different deposition conditions. The electrical characteristics and performance of the resulting p-n heterojunctions were studied as function of substrate and post-deposition anneal temperature. In-situ growth results on diodes with a rectification factor of ~ 105, an ideality factor < 2, and a reverse saturation current ~ 10-8 A. The carrier concentration in the CdTe film was in the range of ~ 1015 cm-3, as measured by C-V methods. The possible impact of sulfur diffusion from the CdS into the CdTe film is also investigated using High Resolution Rutherford Back-Scattering.

  11. In-situ CdS/CdTe Heterojuntions Deposited by Pulsed Laser Deposition

    KAUST Repository

    Avila-Avendano, Jesus; Mejia, Israel; Alshareef, Husam N.; Guo, Zaibing; Young, Chadwin; Quevedo-Lopez, Manuel

    2016-01-01

    In this paper pulsed laser deposition (PLD) methods are used to study p-n CdTe/CdS heterojunctions fabricated in-situ. In-situ film deposition allows higher quality p-n interfaces by minimizing spurious contamination from the atmosphere. Morphologic and structural analyses were carried for CdTe films deposited on various substrates and different deposition conditions. The electrical characteristics and performance of the resulting p-n heterojunctions were studied as function of substrate and post-deposition anneal temperature. In-situ growth results on diodes with a rectification factor of ~ 105, an ideality factor < 2, and a reverse saturation current ~ 10-8 A. The carrier concentration in the CdTe film was in the range of ~ 1015 cm-3, as measured by C-V methods. The possible impact of sulfur diffusion from the CdS into the CdTe film is also investigated using High Resolution Rutherford Back-Scattering.

  12. Effects of boron addition on a-Si90Ge10:H films obtained by low frequency plasma enhanced chemical vapour deposition

    International Nuclear Information System (INIS)

    Perez, Arllene M; Renero, Francisco J; Zuniga, Carlos; Torres, Alfonso; Santiago, Cesar

    2005-01-01

    Optical, structural and electric properties of (a-(Si 90 Ge 10 ) 1-y B y :H) thin film alloys, deposited by low frequency plasma enhanced chemical vapour deposition, are presented. The chemical bonding structure has been studied by IR spectroscopy, while the composition was investigated by Raman spectroscopy. A discussion about boron doping effects, in the composition and bonding of samples, is presented. Transport of carriers has been studied by measurement of the conductivity dependence on temperature, which increases from 10 -3 to 10 1 Ω -1 cm -1 when the boron content varies from 0 to 50%. Similarly, the activation energy is between 0.62 and 0.19 eV when the doping increases from 0 to 83%. The optical properties have been determined from the film's optical transmission, using Swanepoel's method. It is shown that the optical gap varies from 1.3 to 0.99 eV

  13. The development of the process of electrophoresis deposition of the boron on aluminium substrate to be used in the construction of neutron detectors

    International Nuclear Information System (INIS)

    Oliveira Sampa, M.H. de.

    1988-01-01

    The development in the country of autonomous nuclear technology made it necessary to construct radiation detectors to substitute the imported ones among others the boron lined neutron detectors. For this reason was developed the process of boron electrophoresis deposition on aluminium substrate of large area for use in the construction of these neutron detectors. After the definition and optimization of the parameters involved in the process, depositions of 10 B were made on cylinders to be used after wards as electrodes in gamma compensated and non-compensated ionization chambers and in proportional detectors. Prototype of ionization were designed, builted and mounted in the department of Application for Engineering and Industry (TE) of Nuclear Energy Research Institute (IPEN) belonging to the National Atomic Energy Comission (CNEN). Submited to caracterization tests at IPEN's IEA-RL reactor, they satisfied fully the technical especifications of the project. (author) [pt

  14. Depositing laser-generated nanoparticles on powders for additive manufacturing of oxide dispersed strengthened alloy parts via laser metal deposition

    Science.gov (United States)

    Streubel, René; Wilms, Markus B.; Doñate-Buendía, Carlos; Weisheit, Andreas; Barcikowski, Stephan; Henrich Schleifenbaum, Johannes; Gökce, Bilal

    2018-04-01

    We present a novel route for the adsorption of pulsed laser-dispersed nanoparticles onto metal powders in aqueous solution without using any binders or surfactants. By electrostatic interaction, we deposit Y2O3 nanoparticles onto iron-chromium based powders and obtain a high dispersion of nano-sized particles on the metallic powders. Within the additively manufactured component, we show that the particle spacing of the oxide inclusion can be adjusted by the initial mass fraction of the adsorbed Y2O3 particles on the micropowder. Thus, our procedure constitutes a robust route for additive manufacturing of oxide dispersion-strengthened alloys via oxide nanoparticles supported on steel micropowders.

  15. High quality single atomic layer deposition of hexagonal boron nitride on single crystalline Rh(111) four-inch wafers

    Energy Technology Data Exchange (ETDEWEB)

    Hemmi, A.; Bernard, C.; Cun, H.; Roth, S.; Klöckner, M.; Kälin, T.; Osterwalder, J.; Greber, T., E-mail: greber@physik.uzh.ch [Physik-Institut, Universität Zürich, CH-8057 Zürich (Switzerland); Weinl, M.; Gsell, S.; Schreck, M. [Institut für Physik, Universität Augsburg, D-86135 Augsburg (Germany)

    2014-03-15

    The setup of an apparatus for chemical vapor deposition (CVD) of hexagonal boron nitride (h-BN) and its characterization on four-inch wafers in ultra high vacuum (UHV) environment is reported. It provides well-controlled preparation conditions, such as oxygen and argon plasma assisted cleaning and high temperature annealing. In situ characterization of a wafer is accomplished with target current spectroscopy. A piezo motor driven x-y stage allows measurements with a step size of 1 nm on the complete wafer. To benchmark the system performance, we investigated the growth of single layer h-BN on epitaxial Rh(111) thin films. A thorough analysis of the wafer was performed after cutting in atmosphere by low energy electron diffraction, scanning tunneling microscopy, and ultraviolet and X-ray photoelectron spectroscopies. The apparatus is located in a clean room environment and delivers high quality single layers of h-BN and thus grants access to large area UHV processed surfaces, which had been hitherto restricted to expensive, small area single crystal substrates. The facility is versatile enough for customization to other UHV-CVD processes, e.g., graphene on four-inch wafers.

  16. Substrate temperature dependence of microcrystallinity in plasma-deposited, boron-doped hydrogenated silicon alloys

    International Nuclear Information System (INIS)

    Rajeswaran, G.; Kampas, F.J.; Vanier, P.E.; Sabatini, R.L.; Tafto, J.

    1983-01-01

    The glow-discharge decomposition of silane diluted in hydrogen using diborane as a dopant results in the deposition of p-type microcrystalline silicon films at relatively low temperatures. The conductivity of these films is critically dependent on the substrate temperature when the ratio of silane flow rate to total gas flow rate is 1%. Electron micrographs show that highly conducting films contain numerous clusters of 2.5-nm crystallites that are embedded in an amorphous medium

  17. Comparison of lanthanum substituted bismuth titanate (BLT) thin films deposited by sputtering and pulsed laser deposition

    International Nuclear Information System (INIS)

    Besland, M.P.; Djani-ait Aissa, H.; Barroy, P.R.J.; Lafane, S.; Tessier, P.Y.; Angleraud, B.; Richard-Plouet, M.; Brohan, L.; Djouadi, M.A.

    2006-01-01

    Bi 4-x La x Ti 3 O 12 (BLT x ) (x = 0 to 1) thin films were grown on silicon (100) and platinized substrates Pt/TiO 2 /SiO 2 /Si using RF diode sputtering, magnetron sputtering and pulsed laser deposition (PLD). Stoichiometric home-synthesized targets were used. Reactive sputtering was investigated in argon/oxygen gas mixture, with a pressure ranging from 0.33 to 10 Pa without heating the substrate. PLD was investigated in pure oxygen, at a chamber pressure of 20 Pa for a substrate temperature of 400-440 deg. C. Comparative structural, chemical, optical and morphological characterizations of BLT thin films have been performed by X-ray diffraction (XRD), Scanning Electron Microscopy (SEM), Energy Dispersive Spectroscopy (EDS), X-Ray Photoelectron Spectroscopy (XPS), Spectro-ellipsometric measurements (SE) and Atomic Force Microscopy (AFM). Both sputtering techniques allow to obtain uniform films with thickness ranging from 200 to 1000 nm and chemical composition varying from (Bi,La) 2 Ti 3 O 12 to (Bi,La) 4.5 Ti 3 O 12 , depending on deposition pressure and RF power. In addition, BLT films deposited by magnetron sputtering, at a pressure deposition ranging from 1.1 to 5 Pa, were well-crystallized after a post-deposition annealing at 650 deg. C in oxygen. They exhibit a refractive index and optical band gap of 2.7 and 3.15 eV, respectively. Regarding PLD, single phase and well-crystallized, 100-200 nm thick BLT films with a stoichiometric (Bi,La) 4 Ti 3 O 12 chemical composition were obtained, exhibiting in addition a preferential orientation along (200). It is worth noting that BLT films deposited by magnetron sputtering are as well-crystallized than PLD ones

  18. Laser-induced ion emission during polymer deposition from a flash-frozen water ice matrix

    DEFF Research Database (Denmark)

    Rodrigo, K.; Toftmann, Bo; Schou, Jørgen

    2004-01-01

    Flash-frozen water solutions of 1% weight PEG (polyethylene glycol) at -50 degreesC were used as targets at a laser wavelength of 355 nm for polymer deposition with Matrix-Assisted Pulsed Laser Evaporation (MAPLE). For medium laser fluences the transfer of PEG material to the substrate was accomp......Flash-frozen water solutions of 1% weight PEG (polyethylene glycol) at -50 degreesC were used as targets at a laser wavelength of 355 nm for polymer deposition with Matrix-Assisted Pulsed Laser Evaporation (MAPLE). For medium laser fluences the transfer of PEG material to the substrate...

  19. Influence of laser irradiation on deposition characteristics of cold sprayed Stellite-6 coatings

    Science.gov (United States)

    Li, Bo; Jin, Yan; Yao, Jianhua; Li, Zhihong; Zhang, Qunli; Zhang, Xin

    2018-03-01

    Depositing hard materials such as Stellite-6 solely by cold spray (CS) is challengeable due to limited ability of plastic deformation. In this study, the deposition of Stellite-6 powder was achieved by supersonic laser deposition (SLD) which combines CS with synchronous laser irradiation. The surface morphology, deposition efficiency, track shape of Stellite-6 coatings produced over a range of laser irradiation temperatures were examined so as to reveal the effects of varying laser energy inputting on the deposition process of high strength material. The microstructure, phase composition and wear/corrosion resistant properties of the as-deposited Stellite-6 coatings were also investigated. The experimental results demonstrate that the surface flatness and deposition efficiency increase with laser irradiation temperature due to the softening effect induced by laser heating. The as-deposited Stellite-6 tracks show asymmetric shapes which are influenced by the relative configuration of powder stream and laser beam. The SLD coatings can preserve the original microstructure and phase of the feedstock material due to relatively low laser energy inputting, which result in the superior wear/corrosion resistant properties as compared to the counterpart prepared by laser cladding.

  20. Impact of laser power density on tribological properties of Pulsed Laser Deposited DLC films

    Science.gov (United States)

    Gayathri, S.; Kumar, N.; Krishnan, R.; AmirthaPandian, S.; Ravindran, T. R.; Dash, S.; Tyagi, A. K.; Sridharan, M.

    2013-12-01

    Fabrication of wear resistant and low friction carbon films on the engineered substrates is considered as a challenging task for expanding the applications of diamond-like carbon (DLC) films. In this paper, pulsed laser deposition (PLD) technique is used to deposit DLC films on two different types of technologically important class of substrates such as silicon and AISI 304 stainless steel. Laser power density is one of the important parameter used to tailor the fraction of sp2 bonded amorphous carbon (a-C) and tetrahedral amorphous carbon (ta-C) made by sp3 domain in the DLC film. The I(D)/I(G) ratio decreases with the increasing laser power density which is associated with decrease in fraction of a-C/ta-C ratio. The fraction of these chemical components is quantitatively analyzed by EELS which is well supported to the data obtained from the Raman spectroscopy. Tribological properties of the DLC are associated with chemical structure of the film. However, the super low value of friction coefficient 0.003 is obtained when the film is predominantly constituted by a-C and sp2 fraction which is embedded within the clusters of ta-C. Such a particular film with super low friction coefficient is measured while it was deposited on steel at low laser power density of 2 GW/cm2. The super low friction mechanism is explained by low sliding resistance of a-C/sp2 and ta-C clusters. Combination of excellent physical and mechanical properties of wear resistance and super low friction coefficient of DLC films is desirable for engineering applications. Moreover, the high friction coefficient of DLC films deposited at 9GW/cm2 is related to widening of the intergrain distance caused by transformation from sp2 to sp3 hybridized structure.

  1. Boron mediation on the growth of Ge quantum dots on Si (1 0 0) by ultra high vacuum chemical vapor deposition system

    International Nuclear Information System (INIS)

    Chen, P.S.; Pei, Z.; Peng, Y.H.; Lee, S.W.; Tsai, M.-J.

    2004-01-01

    Self-assembled Ge quantum dots (QDs) with boron mediation are grown on Si (1 0 0) by an industrial hot wall ultra-high-vacuum chemical vapor deposition (UHV/CVD) system with different growth temperatures and dopant gas flow rates. Diborane (B 2 H 6 ) gas is applied as a surfactant on the Si (1 0 0) prior to the growth of Ge QDs. Small dome and pyramid shaped Ge QDs are observed after boron treatment as compared to the hut shaped Ge cluster without boron pre-treatment at 525 and 550 deg. C. The Ge QDs have a typical base width and height of about 30 and 6 nm, respectively, and the density is about 2.5x10 10 cm -2 for the growth temperature of 525 deg. C. Through weakening the Si-H bond during the epitaxy growth and changing the stress field on the surface of the Si (1 0 0) buffer, boron mediation can modify the growth mode of Ge QDs. When the growth temperature is low (525-550 deg. C), the former factor is dominate, as the growth temperature is raised (600 deg. C), the latter parameter may play an important role on the formation of Ge QDs. Optical transition from Ge QDs is demonstrated from photoluminescence (PL) spectra. Furthermore, multifold Ge/Si layers are also carried out to enhance the PL intensity with first Ge layer treated by B 2 H 6 and avoid the generation of threading dislocations

  2. Nanostructured high valence silver oxide produced by pulsed laser deposition

    International Nuclear Information System (INIS)

    Dellasega, D.; Facibeni, A.; Di Fonzo, F.; Russo, V.; Conti, C.; Ducati, C.; Casari, C.S.; Li Bassi, A.; Bottani, C.E.

    2009-01-01

    Among silver oxides, Ag 4 O 4 , i.e. high valence Ag(I)Ag(III) oxide, is interesting for applications in high energy batteries and for the development of antimicrobial coatings. We here show that ns UV pulsed laser deposition (PLD) in an oxygen containing atmosphere allows the synthesis of pure Ag 4 O 4 nanocrystalline thin films, permitting at the same time to control the morphology of the material at the sub-micrometer scale. Ag 4 O 4 films with a crystalline domain size of the order of tens of nm can be deposited provided the deposition pressure is above a threshold (roughly 4 Pa pure O 2 or 20 Pa synthetic air). The formation of this particular high valence silver oxide is explained in terms of the reactions occurring during the expansion of the ablated species in the reactive atmosphere. In particular, expansion of the PLD plasma plume is accompanied by formation of low stability Ag-O dimers and atomic oxygen, providing reactive species at the substrate where the film grows. Evidence of reactive collisions in the expanding ablation plume is obtained by analysis of the plume visible shape in inert and reactive atmospheres. In addition, we show how the dimensionless deposition parameter L, relating the target-to-substrate distance to the ablation plume maximum expansion length, can be used to classify different growth regimes. It is thus possible to vary the stoichiometry and the morphology of the films, from compact and columnar to foam-like, by controlling both the gas pressure and the target-to-substrate distance

  3. Properties of pulsed laser deposited NiO/MWCNT thin films

    CSIR Research Space (South Africa)

    Yalisi, B

    2011-05-01

    Full Text Available Pulsed laser deposition (PLD) is a thin-film deposition technique, which uses short and intensive laser pulses to evaporate target material. The technique has been used in this work to produce selective solar absorber (SSA) thin film composites...

  4. Effects of an external magnetic field in pulsed laser deposition

    Science.gov (United States)

    García, T.; de Posada, E.; Villagrán, M.; Ll, J. L. Sánchez; Bartolo-Pérez, P.; Peña, J. L.

    2008-12-01

    Thin films were grown by pulsed laser deposition, PLD, on Si (1 0 0) substrates by the ablation of a sintered ceramic SrFe 12O 19 target with and without the presence of a nonhomogeneous magnetic field of μ0H = 0.4 T perpendicular to substrate plane and parallel to the plasma expansion axis. The field was produced by a rectangular-shaped Nd-Fe-B permanent magnet and the substrate was just placed on the magnet surface (Aurora method). An appreciable increment of optical emission due to the presence of the magnetic field was observed, but no film composition change or thickness increment was obtained. It suggests that the increment of the optical emission is due mainly to the electron confinement rather than confinement of ionic species.

  5. Effects of an external magnetic field in pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Garcia, T. [Universidad Autonoma de la Ciudad de Mexico (UACM), Prolongacion San Isidro 151, Col. San Lorenzo Tezonco, C.P. 09790, Mexico DF (Mexico)], E-mail: tupacgarcia@yahoo.com; Posada, E. de [CINVESTAV-IPN Unidad Merida, Applied Physics Department, A.P. 73, Cordemex, C.P. 97130 Merida, Yuc. (Mexico); Villagran, M. [CCADET, Universidad Nacional Autonoma de Mexico (UNAM), A.P. 70-186, C.P. 04510, Mexico DF (Mexico); Ll, J.L. Sanchez [Laboratorio de Magnetismo, Facultad de Fisica-IMRE, Universidad de La Habana, La Habana 10400 (Cuba); Bartolo-Perez, P.; Pena, J.L. [CINVESTAV-IPN Unidad Merida, Applied Physics Department, A.P. 73, Cordemex, C.P. 97130 Merida, Yuc. (Mexico)

    2008-12-30

    Thin films were grown by pulsed laser deposition, PLD, on Si (1 0 0) substrates by the ablation of a sintered ceramic SrFe{sub 12}O{sub 19} target with and without the presence of a nonhomogeneous magnetic field of {mu}{sub 0}H = 0.4 T perpendicular to substrate plane and parallel to the plasma expansion axis. The field was produced by a rectangular-shaped Nd-Fe-B permanent magnet and the substrate was just placed on the magnet surface (Aurora method). An appreciable increment of optical emission due to the presence of the magnetic field was observed, but no film composition change or thickness increment was obtained. It suggests that the increment of the optical emission is due mainly to the electron confinement rather than confinement of ionic species.

  6. Pulsed laser deposition of Tl-Ca-Ba-Cu-O films

    International Nuclear Information System (INIS)

    Ianno, N.J.; Liou, S.H.; Woollam, J.A.; Thompson, D.; Johs, B.

    1990-01-01

    Pulsed laser deposition is a technique commonly used to deposit high quality thin films of high temperature superconductors. This paper discusses the results obtained when this technique is applied to the deposition of Tl-Ca-Ba-Cu-O thin films using a frequency doubled Nd:YAG laser operating at 532 nm and an excimer laser operating at 248 nm. Films with onset temperatures of 125 K and zero resistance temperatures of 110 K deposited on (100) oriented MgO from a composite Tl2Ca2Ba2Cu3Ox target were obtained at both wavelengths upon appropriate post deposition annealing. Films deposited at 532 nm exhibit a rough surface, while those deposited at 248 nm are smooth and homogeneous. Upon annealing, films deposited at both wavelengths are single phase Tl2Ca2Ba2Cu3Ox. 12 refs

  7. Morphology and structural studies of WO_3 films deposited on SrTiO_3 by pulsed laser deposition

    International Nuclear Information System (INIS)

    Kalhori, Hossein; Porter, Stephen B.; Esmaeily, Amir Sajjad; Coey, Michael; Ranjbar, Mehdi; Salamati, Hadi

    2016-01-01

    Highlights: • Highly oriented WO_3 stoichiometric films were determined using pulsed laser deposition method. • Effective parameters on thin films including temperature, oxygen partial pressure and laser energy fluency was studied. • A phase transition was observed in WO_3 films at 700 °C from monoclinic to tetragonal. - Abstract: WO_3 films have been grown by pulsed laser deposition on SrTiO_3 (001) substrates. The effects of substrate temperature, oxygen partial pressure and energy fluence of the laser beam on the physical properties of the films were studied. Reflection high-energy electron diffraction (RHEED) patterns during and after growth were used to determine the surface structure and morphology. The chemical composition and crystalline phases were obtained by XPS and XRD respectively. AFM results showed that the roughness and skewness of the films depend on the substrate temperature during deposition. Optimal conditions were determined for the growth of the highly oriented films.

  8. High strain amount in recessed junctions induced by selectively deposited boron-doped SiGe layers

    Energy Technology Data Exchange (ETDEWEB)

    Radamson, H.H. [School of Information and Communication Technology, KTH (Royal Institute of Technology) Isafjordsg. 22-26, Electrum 229, 16640 Kista (Sweden)], E-mail: rad@kth.se; Kolahdouz, M.; Ghandi, R.; Ostling, M. [School of Information and Communication Technology, KTH (Royal Institute of Technology) Isafjordsg. 22-26, Electrum 229, 16640 Kista (Sweden)

    2008-12-05

    This work presents the selective epitaxial growth (SEG) of Si{sub 1-x}Ge{sub x} (x = 0.15-0.315) layers with high amount of boron (1 x 10{sup 20}-1 x 10{sup 21} cm{sup -3}) in recessed or unprocessed (elevated) openings for source/drain applications in CMOS has been studied. The influence of the growth rate and strain on boron incorporation has been studied. A focus has been made on the strain distribution and boron incorporation in SEG of SiGe layers.

  9. High strain amount in recessed junctions induced by selectively deposited boron-doped SiGe layers

    International Nuclear Information System (INIS)

    Radamson, H.H.; Kolahdouz, M.; Ghandi, R.; Ostling, M.

    2008-01-01

    This work presents the selective epitaxial growth (SEG) of Si 1-x Ge x (x = 0.15-0.315) layers with high amount of boron (1 x 10 20 -1 x 10 21 cm -3 ) in recessed or unprocessed (elevated) openings for source/drain applications in CMOS has been studied. The influence of the growth rate and strain on boron incorporation has been studied. A focus has been made on the strain distribution and boron incorporation in SEG of SiGe layers

  10. UV and RIR matrix assisted pulsed laser deposition of organic MEH-PPV films

    International Nuclear Information System (INIS)

    Toftmann, B.; Papantonakis, M.R.; Auyeung, R.C.Y.; Kim, W.; O'Malley, S.M.; Bubb, D.M.; Horwitz, J.S.; Schou, J.; Johansen, P.M.; Haglund, R.F.

    2004-01-01

    A comparative study of thin film production based on gentle laser-ablation techniques has been carried out with the luminescent polymer poly[2-methoxy-5-(2'-ethylhexyloxy)-1,4-phenylene vinylene]. Using a free-electron laser films were made by resonant infrared pulsed laser deposition (RIR-PLD). For the first time resonant infrared matrix assisted pulsed laser evaporation (RIR-MAPLE) was successfully demonstrated on a luminescent polymer system. In addition to this, an excimer laser has been used for UV-MAPLE depositions at 193 and 248-nm irradiation. Films deposited onto NaCl and quartz substrates were analyzed by Fourier transform infrared spectroscopy, UV-visible absorbance and photoluminescence. Photoluminescent material was deposited by RIR-MAPLE and 248-nm MAPLE, while the RIR-PLD and 193-nm-MAPLE depositions displayed the smoothest surfaces but did not show photoluminescence

  11. UV and RIR matrix assisted pulsed laser deposition of organic MEH-PPV films

    DEFF Research Database (Denmark)

    Christensen, Bo Toftmann; Papantonalis, M.R.; Auyeung, R.C.Y.

    2004-01-01

    -PLD). For the first time resonant infrared matrix assisted pulsed laser evaporation (RIR-MAPLE) was successfully demonstrated on a luminescent polymer system. In addition to this, an excimer laser has been used for UV-MAPLE depositions at 193 and 248-nm irradiation. Films deposited onto NaCl and quartz substrates......A comparative study of thin film production based on gentle laser-ablation techniques has been carried out with the luminescent polymer poly [2-methoxy-5-(2'-ethylhexyloxy)-1,4-phenylene vinylene]. Using a free-electron laser films were made by resonant infrared pulsed laser deposition (RIR...... were analyzed by Fourier transform infrared spectroscopy, UV-visible absorbance and photoluminescence. Photoluminescent material was deposited by RIR-MAPLE and 248-nm MAPLE, while the RIR-PLD and 193-nm-MAPLE depositions displayed the smoothest surfaces but did not show photoluminescence. (C) 2003...

  12. Performance characterization of Ni60-WC coating on steel processed with supersonic laser deposition

    Directory of Open Access Journals (Sweden)

    Fang Luo

    2015-03-01

    Full Text Available Ni60-WC particles are used to improve the wear resistance of hard-facing steel due to their high hardness. An emerging technology that combines laser with cold spraying to deposit the hard-facing coatings is known as supersonic laser deposition. In this study, Ni60-WC is deposited on low-carbon steel using SLD. The microstructure and performance of the coatings are investigated through SEM, optical microscopy, EDS, XRD, microhardness and pin-on-disc wear tests. The experimental results of the coating processed with the optimal parameters are compared to those of the coating deposited using laser cladding.

  13. Avalanche boron fusion by laser picosecond block ignition with magnetic trapping for clean and economic reactor

    Czech Academy of Sciences Publication Activity Database

    Hora, H.; Korn, Georg; Eliezer, S.; Nissim, N.; Lalousis, P.; Giuffrida, Lorenzo; Margarone, Daniele; Picciotto, A.; Miley, G. H.; Moustaizis, S.; Martinez-Val, J.M.; Barty, C.P.J.; Kirchhoff, G.J.

    2016-01-01

    Roč. 4, Oct (2016), 1-9, č. článku e35. ISSN 2095-4719 R&D Projects: GA MŠk EF15_008/0000162 Grant - others:ELI Beamlines(XE) CZ.02.1.01/0.0/0.0/15_008/0000162 Institutional support: RVO:68378271 Keywords : boron fusion energy * dielectric nonlinear force explosion * economic reactor * environmentally clean energy Subject RIV: BL - Plasma and Gas Discharge Physics

  14. Chemical vapor deposition growth of boron-carbon-nitrogen layers from methylamine borane thermolysis products

    Science.gov (United States)

    Leardini, Fabrice; Flores, Eduardo; Galvis E, Andrés R.; Ferrer, Isabel J.; Ramón Ares, José; Sánchez, Carlos; Molina, Pablo; van der Meulen, Herko P.; Gómez Navarro, Cristina; López Polin, Guillermo; Urbanos, Fernando J.; Granados, Daniel; García-García, F. Javier; Demirci, Umit B.; Yot, Pascal G.; Mastrangelo, Filippo; Grazia Betti, Maria; Mariani, Carlo

    2018-01-01

    This work investigates the growth of B-C-N layers by chemical vapor deposition using methylamine borane (MeAB) as the single-source precursor. MeAB has been synthesized and characterized, paying particular attention to the analysis of its thermolysis products, which are the gaseous precursors for B-C-N growth. Samples have been grown on Cu foils and transferred onto different substrates for their morphological, structural, chemical, electronic and optical characterizations. The results of these characterizations indicate a segregation of h-BN and graphene-like (Gr) domains. However, there is an important presence of B and N interactions with C at the Gr borders, and of C interacting at the h-BN-edges, respectively, in the obtained nano-layers. In particular, there is a significant presence of C-N bonds, at Gr/h-BN borders and in the form of N doping of Gr domains. The overall B:C:N contents in the layers is close to 1:3:1.5. A careful analysis of the optical bandgap determination of the obtained B-C-N layers is presented, discussed and compared with previous seminal works with samples of similar composition.

  15. High arsenic and boron concentrations in groundwaters related to mining activity in the Bigadic borate deposits (Western Turkey)

    International Nuclear Information System (INIS)

    Gemici, Unsal; Tarcan, Gueltekin; Helvaci, Cahit; Somay, A. Melis

    2008-01-01

    This study documents the environmental impacts of borate mines in Bigadic district, which are the largest colemanite and ulexite deposits in the world. Borate-bearing formations have affected the concentrations of some contaminants in groundwater. Groundwater quality is directly related to the borate zones in the mines as a result of water-rock interaction processes. Calcium is the dominant cation and waters are Ca-SO 4 and HCO 3 type in the mine (Tuelue borate mine) from which colemanite is produced. However in the Simav and Acep Borate Mines, ulexite and colemanite minerals are produced and waters from these open pit mines are Na-HCO 3 -SO 4 types. High SO 4 concentrations (reaching 519 mg/L) might be explained by the existence of anhydrite, gypsum and celestite minerals in the borate zone. Groundwater from tuff and borate strata showed relatively low pH values (7-8) compared to surface and mine waters (>8). EC values ranged from 270 to 2850 μS/cm. Boron and As were the two important contaminants determined in the groundwaters around the Bigadic borate mines. Arsenic is the major pollutant and it ranged from 33 to 911 μg/L in the groundwater samples. The concentrations of B in the study area ranged from 0.05 to 391 mg/L. The highest B concentrations were detected at the mine areas. The extension of the borate zones in the aquifer systems is the essential factor in the enrichment of B and As, and some major and trace elements in groundwaters are directly related to the leaching of the host rock which are mainly composed of tuffs and limestones. According to drinking water standards, all of the samples exceed the tolerance limit for As. Copper, Mn, Zn and Li values are enriched but do not exceed the drinking water standards. Sulfate, Al and Fe concentrations are above the drinking water standard for the groundwater samples

  16. The properties of Ge quantum rings deposited by pulsed laser deposition.

    Science.gov (United States)

    Ma, Xiying

    2010-07-01

    SiGe ring-shape nanostructures have attracted much research interest because of the interesting morphology, mechanical, and electromagnetic properties. In this paper, we present the planar Ge nanorings with well-defined sharp edges self-assembled on Si (100) matrix prepared with pulsed laser deposition (PLD) in the present of Ar gas. The transforming mechanism of the droplets is discussed, which a dynamic deformation model has been developed to simulate the self-transforming process of the droplets. The rings were found to be formed in two steps: from droplets to cones and from cones to rings via an elastic self-deforming process, which were likely to be driven by the lateral strain of Ge/Si layers and the surface tension.

  17. Deposition of superconducting (Cu, C)-Ba-O films by pulsed laser deposition at moderate temperature

    International Nuclear Information System (INIS)

    Yamamoto, Tetsuro; Kikunaga, Kazuya; Obara, Kozo; Terada, Norio; Kikuchi, Naoto; Tanaka, Yasumoto; Tokiwa, Kazuyasu; Watanabe, Tsuneo; Sundaresan, Athinarayanan; Shipra

    2007-01-01

    Superconducting (Cu, C)-Ba-O thin films have been epitaxially grown on (100) SrTiO 3 at a low growth temperature of 500-600 deg. C by pulsed laser deposition. The dependences of their crystallinity and transport properties on preparation conditions have been investigated in order to clarify the dominant parameters for carbon incorporation and the emergence of superconductivity. It has been revealed that the CO 3 content in the films increases with increasing both the parameters of partial pressure of CO 2 during film growth and those of growth rate and enhancement of superconducting properties. The present study has also revealed that the structural and superconducting properties of the (Cu, C)-Ba-O films are seriously deteriorated by the irradiation of energetic particles during deposition. Suppression of the radiation damage is another key for a high and uniform superconducting transition. By these optimizations, a superconducting onset temperature above 50 K and a zero-resistance temperature above 40 K have been realized

  18. Au nanostructure fabrication by pulsed laser deposition in open air: Influence of the deposition geometry

    Directory of Open Access Journals (Sweden)

    Rumen G. Nikov

    2017-11-01

    Full Text Available We present a fast and flexible method for the fabrication of Au nanocolumns. Au nanostructures were produced by pulsed laser deposition in air at atmospheric pressure. No impurities or Au compounds were detected in the resulting samples. The nanoparticles and nanoaggregates produced in the ablated plasma at atmospheric pressure led to the formation of chain-like nanostructures on the substrate. The dependence of the surface morphology of the samples on the deposition geometry used in the experimental set up was studied. Nanocolumns of different size and density were produced by varying the angle between the plasma plume and the substrate. The electrical, optical, and hydrophobic properties of the samples were studied and discussed in relation to their morphology. All of the nanostructures were conductive, with conductivity increasing with the accumulation of ablated material on the substrate. The modification of the electrical properties of the nanostructures was demonstrated by irradiation by infrared light. The Au nanostructures fabricated by the proposed technology are difficult to prepare by other methods, which makes the simple implementation and realization in ambient conditions presented in this work more ideal for industrial applications.

  19. X-ray absorption study of silicon carbide thin film deposited by pulsed laser deposition

    International Nuclear Information System (INIS)

    Monaco, G.; Suman, M.; Garoli, D.; Pelizzo, M.G.; Nicolosi, P.

    2011-01-01

    Silicon carbide (SiC) is an important material for several applications ranging from electronics to Extreme UltraViolet (EUV) space optics. Crystalline cubic SiC (3C-SiC) has a wide band gap (near 2.4 eV) and it is a promising material to be used in high frequency and high energetic electronic devices. We have deposited, by means of pulsed laser deposition (PLD), different SiC films on sapphire and silicon substrates both at mild (650 o C) and at room temperature. The resulted films have different structures such as: highly oriented polycrystalline, polycrystalline and amorphous which have been studied by means of X-ray absorption spectroscopy (XAS) near the Si L 2,3 edge and the C K edge using PES (photoemission spectroscopy) for the analysis of the valence bands structure and film composition. The samples obtained by PLD have shown different spectra among the grown films, some of them showing typical 3C-SiC absorption structure, but also the presence of some Si-Si and graphitic bonds.

  20. Au nanostructure fabrication by pulsed laser deposition in open air: Influence of the deposition geometry.

    Science.gov (United States)

    Nikov, Rumen G; Dikovska, Anna Og; Nedyalkov, Nikolay N; Avdeev, Georgi V; Atanasov, Petar A

    2017-01-01

    We present a fast and flexible method for the fabrication of Au nanocolumns. Au nanostructures were produced by pulsed laser deposition in air at atmospheric pressure. No impurities or Au compounds were detected in the resulting samples. The nanoparticles and nanoaggregates produced in the ablated plasma at atmospheric pressure led to the formation of chain-like nanostructures on the substrate. The dependence of the surface morphology of the samples on the deposition geometry used in the experimental set up was studied. Nanocolumns of different size and density were produced by varying the angle between the plasma plume and the substrate. The electrical, optical, and hydrophobic properties of the samples were studied and discussed in relation to their morphology. All of the nanostructures were conductive, with conductivity increasing with the accumulation of ablated material on the substrate. The modification of the electrical properties of the nanostructures was demonstrated by irradiation by infrared light. The Au nanostructures fabricated by the proposed technology are difficult to prepare by other methods, which makes the simple implementation and realization in ambient conditions presented in this work more ideal for industrial applications.

  1. Spatio-selective surface modification of glass assisted by laser-induced deposition of gold nanoparticles

    International Nuclear Information System (INIS)

    Takahashi, Hironobu; Niidome, Yasuro; Hisanabe, Hideyuki; Kuroiwa, Keita; Kimizuka, Nobuo; Yamada, Sunao

    2006-01-01

    Using pulsed laser irradiation (532 nm), dodecanethiol-capped gold nanoparticles (DT-Au) were deposited on the laser-irradiated region of a hydrophobic glass substrate modified with dimethyloctadecylchlorosilane (DMOS). After removal of deposited DT-Au, the laser-deposited region on the substrate was hydrophilic, as verified by static water contact angles. X-ray photoelectron spectroscopy suggested that the naked glass surface was not exposed at the hydrophilic region. Immersion of the substrate into gold nanorod (NR) solution selectively immobilized NRs on the hydrophilic surface via electrostatic interactions, indicating that the hydrophilic region was an anionic surface. From these results, it is expected that some immobilized DMOS groups on the laser-irradiated region of the substrate were oxidized during DT-Au deposition and fragmentation of the deposited DT-Au

  2. Laser chemical vapor deposition of millimeter scale three-dimensional shapes

    Science.gov (United States)

    Shaarawi, Mohammed Saad

    2001-07-01

    Laser chemical vapor deposition (LCVD) has been successfully developed as a technique to synthesize millimeter-scale components directly from the gas phase. Material deposition occurs when heat generated by the interaction of a laser beam with a substrate thermally decomposes the gas precursor. Selective illumination or scanning the laser beam over portions of a substrate forms the single thin layer of material that is the building block of this process. Sequential scanning of the laser in a pre-defined pattern on the substrate and subsequent deposit causes the layers to accumulate forming the three-dimensional shape. The primary challenge encountered in LCVD shape forming is the synthesis of uniform layers. Three deposition techniques are studied to address this problem. The most successful technique, Active Surface Deposition, is based on the premise that the most uniform deposits are created by measuring the deposition surface topology and actively varying the deposition rate in response to features at the deposition surface. Defects observed in the other techniques were significantly reduced or completely eliminated using Active Surface Deposition. The second technique, Constant Temperature Deposition, maintains deposit uniformity through the use of closed-loop modulation of the laser power to sustain a constant surface temperature during deposition. The technique was successful in depositing high quality graphite tubes >2 mm tall from an acetylene precursor and partially successful in depositing SiC + C composite tubes from tetramethylsilane (TMS). The final technique, Constant Power Deposition, is based on the premise that maintaining a uniform power output throughout deposition would result in the formation of uniform layers. Constant Power Deposition failed to form coherent shapes. Additionally, LCVD is studied using a combination of analytic and numerical models to gain insight into the deposition process. Thermodynamic modeling is used to predict the

  3. Wafer-scale laser lithography. I. Pyrolytic deposition of metal microstructures

    International Nuclear Information System (INIS)

    Herman, I.P.; Hyde, R.A.; McWilliams, B.M.; Weisberg, A.H.; Wood, L.L.

    1982-01-01

    Mechanisms for laser-driven pyrolytic deposition of micron-scale metal structures on crystalline silicon have been studied. Models have been developed to predict temporal and spatial propeties of laser-induced pyrolytic deposition processes. An argon ion laser-based apparatus has been used to deposit metal by pyrolytic decomposition of metal alkyl and carbonyl compounds, in order to evaluate the models. These results of these studies are discussed, along with their implications for the high-speed creation of micron-scale metal structures in ultra-large scale integrated circuit systems. 4 figures

  4. Electronic properties of p-GaAs deposited on n-Si with pulsed-laser deposition

    International Nuclear Information System (INIS)

    Ullrich, B; Erlacher, A; Smith, H E; Mitchel, W C; Brown, G J

    2008-01-01

    By means of nanosecond laser pulses at 355, 532, and 1064 nm, p(Zn)-type GaAs was ablated and deposited on n-type Si. The samples showed rectification and Hall measurements established that the deposited material was p-type, but the active-doping concentration was six orders of magnitude below the target value. Because secondary-ion mass spectroscopy results indicated stoichiometric material transfer, we concluded that most of the Zn atoms do not act as acceptors because of the amorphous film texture. The work further showed indications that pulsed-laser deposition at 355 nm causes enhanced Si diffusion into the deposited film, compared to the ablations done at 532 and 1064 nm

  5. Wear resistance of laser-deposited boride reinforced Ti-Nb-Zr-Ta alloy composites for orthopedic implants

    International Nuclear Information System (INIS)

    Samuel, Sonia; Nag, Soumya; Scharf, Thomas W.; Banerjee, Rajarshi

    2008-01-01

    The inherently poor wear resistance of titanium alloys limits their application as femoral heads in femoral (hip) implants. Reinforcing the soft matrix of titanium alloys (including new generation β-Ti alloys) with hard ceramic precipitates such as borides offers the possibility of substantially enhancing the wear resistance of these composites. The present study discusses the microstructure and wear resistance of laser-deposited boride reinforced composites based on Ti-Nb-Zr-Ta alloys. These composites have been deposited using the LENS TM process from a blend of elemental Ti, Nb, Zr, Ta, and boron powders and consist of complex borides dispersed in a matrix of β-Ti. The wear resistance of these composites has been compared with that of Ti-6Al-4V ELI, the current material of choice for orthopedic femoral implants, against two types of counterfaces, hard Si 3 N 4 and softer SS440C stainless steel. Results suggest a substantial improvement in the wear resistance of the boride reinforced Ti-Nb-Zr-Ta alloys as compared with Ti-6Al-4V ELI against the softer counterface of SS440. The presence of an oxide layer on the surface of these alloys and composites also appears to have a substantial effect in terms of enhanced wear resistance

  6. Characterization of superconducting thin films deposited by laser ablation. Caracterisation de films minces supraconducteurs deposes par ablation laser

    Energy Technology Data Exchange (ETDEWEB)

    Sentis, M; Delaporte, P [I.M.F.M., 13 - Marseille (FR); Gerri, M; Marine, W [Aix-Marseille-2 Univ., 13-Marseille (FR). Centre Universitaire de Luminy

    1991-05-01

    Thin films of YBa{sub 2}Cu{sub 3}O{sub 7} are deposited by laser ablation on MgO and YSZ substrates. Deposits by infrared (I.R.) Nd: YAG are non stoechiometric. The films having the best superconductor qualities are deposited by ablation with an excimer U.V. laser ({lambda} = 308 nm). These films are epitaxiated with the c axis perpendicular to the substrate. The film quality depends on the substrate temperature, oxygen pressure and cooling speed.

  7. Laser wavelength dependent properties of YBa2Cu3O7-δ thin films deposited by laser ablation

    International Nuclear Information System (INIS)

    Koren, G.; Gupta, A.; Baseman, R.J.; Lutwyche, M.I.; Laibowitz, R.B.

    1989-01-01

    YBa 2 Cu 3 O 7-δ thin films were deposited onto (100) SrTiO 3 substrates using 1064, 532, 355, 248, and 193 nm laser ablation. Transport measurements show lower normal-state resistivities and higher critical currents in films deposited by the shorter wavelength lasers. The surface morphology of the films was rough with large particulates when the 1064 nm laser was used whereas much smoother surfaces with fewer and smaller particulates were obtained with the UV lasers. It is suggested that the better film quality obtained when the UV lasers are used is due to a small absorption depth of the UV photons in the ceramic target and to higher absorption by the ablated fragments. This leads to smaller ablated species and further fragmentation in the hotter plume and, therefore, to smoother and denser films

  8. Studies of the Influence of Beam Profile and Cooling Conditions on the Laser Deposition of a Directionally-Solidified Superalloy

    Directory of Open Access Journals (Sweden)

    Shuo Yang

    2018-02-01

    Full Text Available In the laser deposition of single crystal and directionally-solidified superalloys, it is desired to form laser deposits with high volume fractions of columnar grains by suppressing the columnar-to-equiaxed transition efficiently. In this paper, the influence of beam profile (circular and square shapes and cooling conditions (natural cooling and forced cooling on the geometric morphology and microstructure of deposits were experimentally studied in the laser deposition of a directionally-solidified superalloy, IC10, and the mechanisms of influence were revealed through a numerical simulation of the thermal processes during laser deposition. The results show that wider and thinner deposits were obtained with the square laser beam than those with the circular laser beam, regardless of whether natural or forced cooling conditions was used. The heights and contact angles of deposits were notably increased due to the reduced substrate temperatures by the application of forced cooling for both laser beam profiles. Under natural cooling conditions, columnar grains formed epitaxially at both the center and the edges of the deposits with the square laser beam, but only at the center of the deposits with the circular laser beam; under forced cooling conditions, columnar grains formed at both the center and the edges of deposits regardless of the laser beam profile. The high ratios of thermal gradient and solidification velocity in the height direction of the deposits were favorable to forming deposits with higher volume fractions of columnar grains.

  9. Tritium decontamination from co-deposited layer on tungsten substrate by ultra violet lamp and laser

    International Nuclear Information System (INIS)

    Oya, Yasuhisa; Tadokoro, Takahiro; Shu, Wataru; Hayashi, Takumi; O'hira, Shigeru; Nishi, Masataka

    2001-01-01

    Tritium decontamination using ultra violet (UV) lamp and laser was performed. Simulated co-deposited layer on tungsten substrate was deposited by C 2 H 2 or C 2 D 2 glow discharge. The co-deposited layer was irradiated to UV lights from a xenon excimer lamp (172 nm) or ArF excimer laser (193 nm) and the in-situ decontamination behavior was evaluated by a mass spectrometer. After the UV irradiation, the hydrogen concentration in the co-deposited layer was evaluated by elastic recoil detection analysis (ERDA) and the depth profile was analyzed by secondary ion mass spectrometry (SIMS). For the co-deposited layer formed by C 2 D 2 glow discharge, it was found that M/e 3 (HD) gas was released mainly during the UV lamp irradiation while both M/e 3 (HD) and M/e 4 (D 2 ) gases were detected during the UV laser irradiation. Though the co-deposited layer was not removed by UV lamp irradiation, almost all the co-deposited layer was removed by UV laser irradiation within 1 min. The ratio of hydrogen against carbon in the co-deposited layer was estimated to be 0.53 by ERDA and the number of photon needed for removing 1 μm thick co-deposited layer was calculated to be 3.7x10 18 cm -2 for the UV laser by SIMS measurement. It is concluded that C-H (C-D) bond on the co-deposited layer were dissociated by irradiation of UV lamp while the co-deposited layer itself was removed by the UV laser irradiation. (author)

  10. Surface electronic and structural properties of nanostructured titanium oxide grown by pulsed laser deposition

    NARCIS (Netherlands)

    Fusi, M.; Maccallini, E.; Caruso, T.; Casari, C. S.; Bassi, A. Li; Bottani, C. E.; Rudolf, P.; Prince, K. C.; Agostino, R. G.

    Titanium oxide nanostructured thin films synthesized by pulsed laser deposition (PLD) were here characterized with a multi-technique approach to investigate the relation between surface electronic, structural and morphological properties. Depending on the growth parameters, these films present

  11. Pulsed laser deposition of lysozyme: the dependence on shot numbers and the angular distribution

    DEFF Research Database (Denmark)

    Constantinescu, C.; Matei, A.; Schou, Jørgen

    2013-01-01

    The ejection of molecules from a pressed solid target of lysozyme induced by laser ablation in the UV-regime at a wavelength of 355 nm was investigated. The ablation studies were carried out in vacuum at a laser fluence of 2 J/cm2 for which a significant fraction of proteins remains intact....... This was verified by matrix-assisted laser desorption ionization (MALDI) spectrometry of thin films deposited on silicon substrates. The deposition rate of lysozyme was found to decrease with the number of shots and was correlated with increasing thermal damage of the lysozyme. This was monitored by measurements...... of the optical reflectivity of dry lysozyme. The angular distribution of the mass deposition can be fitted well by Anisimov’s hydrodynamic model. The total deposited yield over the entire hemisphere from direct laser ablation of lysozyme was estimated from this model and found to be three orders of magnitude...

  12. Emitting recombination of BCl molecules with chlorine atoms, resulting from dissociation of boron trichloride molecules under action of pulse CO2-laser radiation

    International Nuclear Information System (INIS)

    Nikonorov, A.P.; Moskvitina, E.N.; Kuzyakov, Yu.Ya.; Stepanov, P.I.

    1983-01-01

    Luminescence in BCl 3 is investigated. The results of measurements of gas temperature, BCl molecules concentration, and luminescence absolute intensity at boron trichloride presure of 40 mm pH and density of laser pulse energy from 1.7 up to 4.0 J/cm 2 are obtained. Nature of uninterrupted spectrum is considered. It is established that luminescence appearing in the BCl 3 under action of pulse CO 2 -laser is caused by reaction of emitting recombination of BCl molecules with chlorine atoms. Rate constant of this reaction in the range of 2300-3100 K is determined

  13. Deposition of multicomponent chromium carbide coatings using a non-conventional source of chromium and silicon with micro-additions of boron

    Energy Technology Data Exchange (ETDEWEB)

    Gonzalez Ruiz, Jesus Eduardo, E-mail: jesus.gonzalez@biomat.uh.cu [Biomaterials Center, University of Havana (Cuba); Rodriguez Cristo, Alejandro [Mechanical Plants Company, Road of the Sub-Plan, Farm La Cana, Santa Clara, Villa Clara (Cuba); Ramos, Adrian Paz [Department of Chemistry, Universite de Montreal, Quebec (Canada); Quintana Puchol, Rafael [Welding Research Center, Central University Marta Abreu of Las Villas, Villa Clara (Cuba)

    2017-01-15

    The chromium carbide coatings are widely used in the mechanical industry due to its corrosion resistance and mechanical properties. In this work, we evaluated a new source of chromium and silicon with micro-additions of boron on the deposition of multi-component coatings of chromium carbides in W108 steel. The coatings were obtained by the pack cementation method, using a simultaneous deposition at 1000 deg for 4 hours. The coatings were analyzed by X-ray diffraction, X-ray energy dispersive spectroscopy, optical microscopy, microhardness test method and pin-on-disc wear test. It was found that the coatings formed on W108 steel were mainly constituted by (Cr,Fe){sub 23}C{sub 6} , (Cr,Fe){sub 7} C{sub 3} , Cr{sub 5-x}Si{sub 3-x} C{sub x+z}, Cr{sub 3} B{sub 0,44}C{sub 1,4} and (or) Cr{sub 7} BC{sub 4} . The carbide layers showed thicknesses between 14 and 15 μm and maximum values of microhardness between 15.8 and 18.8 GPa. Also, the micro-additions of boron to the mixtures showed statistically significant influence on the thickness, microhardness and abrasive wear resistance of the carbide coatings. (author)

  14. Effects of boron addition on a-Si(90)Ge(10):H films obtained by low frequency plasma enhanced chemical vapour deposition.

    Science.gov (United States)

    Pérez, Arllene M; Renero, Francisco J; Zúñiga, Carlos; Torres, Alfonso; Santiago, César

    2005-06-29

    Optical, structural and electric properties of (a-(Si(90)Ge(10))(1-y)B(y):H) thin film alloys, deposited by low frequency plasma enhanced chemical vapour deposition, are presented. The chemical bonding structure has been studied by IR spectroscopy, while the composition was investigated by Raman spectroscopy. A discussion about boron doping effects, in the composition and bonding of samples, is presented. Transport of carriers has been studied by measurement of the conductivity dependence on temperature, which increases from 10(-3) to 10(1) Ω(-1) cm(-1) when the boron content varies from 0 to 50%. Similarly, the activation energy is between 0.62 and 0.19 eV when the doping increases from 0 to 83%. The optical properties have been determined from the film's optical transmission, using Swanepoel's method. It is shown that the optical gap varies from 1.3 to 0.99 eV.

  15. Improved stability of titanium based boron-doped chemical vapor deposited diamond thin-film electrode by modifying titanium substrate surface

    International Nuclear Information System (INIS)

    Lim, P.Y.; Lin, F.Y.; Shih, H.C.; Ralchenko, V.G.; Varnin, V.P.; Pleskov, Yu.V.; Hsu, S.F.; Chou, S.S.; Hsu, P.L.

    2008-01-01

    The film quality and electrochemical properties of BDD (boron-doped diamond) thin films grown by hot-filament chemical vapor deposition technique on titanium substrates that had been subjected to a range of pre-treatment processes were evaluated. The pre-roughened Ti-substrates are shown to support more adherent BDD films. It is evident that acid-etching the Ti-substrate involves surface hydrogenation that enhances nucleation and formation of diamond thereon. The prepared BDD film exhibits wide potential window and electrochemical reversibility. It also demonstrated a better long-term electrochemical stability based on the low variation in voltametric background current upon the exposing of the electrodes to repeated cycles of electrochemical metal deposition/stripping process

  16. New results in pulsed laser deposition of poly-methyl-methacrylate thin films

    International Nuclear Information System (INIS)

    Cristescu, R.; Socol, G.; Mihailescu, I.N.; Popescu, M.; Sava, F.; Ion, E.; Morosanu, C.O.; Stamatin, I.

    2003-01-01

    Thin organic films based on poly-methyl-methacrylate (PMMA) polymer have been obtained by pulsed laser deposition (PLD) on silicon substrates. The films were characterized by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM) and Raman spectroscopy (RS). We observed that the film composition and structure depend on the laser fluence and on the temperature of the substrate during deposition

  17. Deposition and modification of tantalum carbide coatings on graphite by laser interactions

    International Nuclear Information System (INIS)

    Veligdan, J.; Branch, D.; Vanier, P.E.; Barletta, R.E.

    1992-01-01

    Graphite surfaces can be hardened and protected from erosion by hydrogen at high temperatures by refractory metal carbide coatings, which are usually prepared by chemical vapor deposition (CVD) or chemical vapor reaction (CVR) methods. These techniques rely on heating the substrate to a temperature where a volatile metal halide decomposes and reacts with either a hydrocarbon gas or with carbon from the substrate. For CVR techniques, deposition temperatures must be in excess of 2000 degrees C in order to achieve favorable deposition kinetics. In an effort to lower the bulk substrate deposition temperature, the use of laser interactions with both the substrate and the metal halide deposition gas has been employed. Initial testing, involved the use of a CO 2 laser to heat the surface of a graphite substrate and a KrF excimer laser to accomplish a photodecomposition of TaCl 5 gas near the substrate. Results of preliminary experiments using these techniques are described

  18. Laser diagnostics of a diamond depositing chemical vapour deposition gas-phase environment

    Energy Technology Data Exchange (ETDEWEB)

    Smith, James Anthony

    2002-07-01

    Studies have been carried out to understand the gas-phase chemistry underpinning diamond deposition in hot filament and DC-arcjet chemical vapour deposition (CVD) systems. Resonance enhanced Multiphoton lonisation (REMPI) techniques were used to measure the relative H atom and CH{sub 3} radical number densities and local gas temperatures prevalent in a hot filament reactor, operating on Ch{sub 4}/H{sub 2} and C{sub 2}H{sub 2}/H{sub 2} gas mixtures. These results were compared to a 3D-computer simulation, and hence provided an insight into the nature of the gas-phase chemistry with particular reference to C{sub 2}{yields}C{sub 1} species conversion. Similar experimental and theoretical studies were also carried out to explain the chemistry involved in NH{sub 3}/CH{sub 4}/H{sub 2} and N{sub 2}/CH{sub 4}/H{sub 2} gas mixtures. It was demonstrated that the reactive nature of the filament surface was dependent on the addition of NH{sub 3}, influencing atomic hydrogen production, and thus the H/C/N gas-phase chemistry. Studies of the DC-arcjet diamond CVD reactor consisted of optical emission spectroscopic studies of the plume during deposition from an Ar/H{sub 2}/CH{sub 4}/N{sub 2} gas mixture. Spatially resolved species emission intensity maps were obtained for C{sub 2}(d{yields}a), CN(B{yields}X) and H{sub {beta}} from Abel-inverted datasets. The C{sub 2}(d{yields}a) and CN(B{yields}X) emission intensity maps both show local maxima near the substrate surface. SEM and Laser Raman analyses indicate that N{sub 2} additions lead to a reduction in film quality and growth rate. Photoluminescence and SIMS analyses of the grown films provide conclusive evidence of nitrogen incorporation (as chemically bonded CN). Absolute column densities of C{sub 2}(a) in a DC-arcjet reactor operating on an Ar/H{sub 2}/CH{sub 4} gas mixture, were measured using Cavity ring down spectroscopy. Simulations of the measured C{sub 2}(v=0) transition revealed a rotational temperature of {approx

  19. Laser diagnostics of a diamond depositing chemical vapour deposition gas-phase environment

    International Nuclear Information System (INIS)

    Smith, James Anthony

    2002-01-01

    Studies have been carried out to understand the gas-phase chemistry underpinning diamond deposition in hot filament and DC-arcjet chemical vapour deposition (CVD) systems. Resonance enhanced Multiphoton lonisation (REMPI) techniques were used to measure the relative H atom and CH 3 radical number densities and local gas temperatures prevalent in a hot filament reactor, operating on Ch 4 /H 2 and C 2 H 2 /H 2 gas mixtures. These results were compared to a 3D-computer simulation, and hence provided an insight into the nature of the gas-phase chemistry with particular reference to C 2 →C 1 species conversion. Similar experimental and theoretical studies were also carried out to explain the chemistry involved in NH 3 /CH 4 /H 2 and N 2 /CH 4 /H 2 gas mixtures. It was demonstrated that the reactive nature of the filament surface was dependent on the addition of NH 3 , influencing atomic hydrogen production, and thus the H/C/N gas-phase chemistry. Studies of the DC-arcjet diamond CVD reactor consisted of optical emission spectroscopic studies of the plume during deposition from an Ar/H 2 /CH 4 /N 2 gas mixture. Spatially resolved species emission intensity maps were obtained for C 2 (d→a), CN(B→X) and H β from Abel-inverted datasets. The C 2 (d→a) and CN(B→X) emission intensity maps both show local maxima near the substrate surface. SEM and Laser Raman analyses indicate that N 2 additions lead to a reduction in film quality and growth rate. Photoluminescence and SIMS analyses of the grown films provide conclusive evidence of nitrogen incorporation (as chemically bonded CN). Absolute column densities of C 2 (a) in a DC-arcjet reactor operating on an Ar/H 2 /CH 4 gas mixture, were measured using Cavity ring down spectroscopy. Simulations of the measured C 2 (v=0) transition revealed a rotational temperature of ∼3300 K. This gas temperature is similar to that deduced from optical emission spectroscopy studies of the C 2 (d→a) transition. (author)

  20. Stiffness management of sheet metal parts using laser metal deposition

    Science.gov (United States)

    Bambach, Markus; Sviridov, Alexander; Weisheit, Andreas

    2017-10-01

    Tailored blanks are established solutions for the production of load-adapted sheet metal components. In the course of the individualization of production, such semi-finished products are gaining importance. In addition to tailored welded blanks and tailored rolled blanks, patchwork blanks have been developed which allow a local increase in sheet thickness by welding, gluing or soldering patches onto sheet metal blanks. Patchwork blanks, however, have several limitations, on the one hand, the limited freedom of design in the production of patchwork blanks and, on the other hand, the fact that there is no optimum material bonding with the substrate. The increasing production of derivative and special vehicles on the basis of standard vehicles, prototype production and the functionalization of components require solutions with which semi-finished products and sheet metal components can be provided flexibly with local thickenings or functional elements with a firm metallurgical bond to the substrate. An alternative to tailored and patchwork blanks is, therefore, a free-form reinforcement applied by additive manufacturing via laser metal deposition (LMD). By combining metal forming and additive manufacturing, stiffness can be adapted to the loads based on standard components in a material-efficient manner and without the need to redesign the forming tools. This paper details a study of the potential of stiffness management by LMD using a demonstrator part. Sizing optimization is performed and part distortion is taken into account to find an optimal design for the cladding. A maximum stiffness increase of 167% is feasible with only 4.7% additional mass. Avoiding part distortion leads to a pareto-optimal design which achieves 95% more stiffness with 6% added mass.

  1. Laser assisted modification and chemical metallization of electron-beam deposited ceria thin films

    International Nuclear Information System (INIS)

    Krumov, E.; Starbov, N.; Starbova, K.; Perea, A.; Solis, J.

    2009-01-01

    Excimer laser processing is applied for tailoring the surface morphology and phase composition of CeO 2 ceramic thin films. E-beam evaporation technique is used to deposit samples on stainless steel and silicate glass substrates. The films are then irradiated with ArF* excimer laser pulses under different exposure conditions. Scanning electron microscopy, optical spectrophotometry, X-ray diffractometry and EDS microanalysis are used to characterize the non-irradiated and laser-processed films. Upon UV laser exposure there is large increase of the surface roughness that is accompanied by photo-darkening and ceria reduction. It is shown that the laser induced changes in the CeO 2 films facilitate the deposition of metal nano-aggregates in a commercial copper electroless plating bath. The significance of laser modification as a novel approach for the production of CeO 2 based thin film catalysts is discussed.

  2. Laser assisted modification and chemical metallization of electron-beam deposited ceria thin films

    Energy Technology Data Exchange (ETDEWEB)

    Krumov, E., E-mail: emodk@clf.bas.bg [Central Laboratory of Photoprocesses ' Acad. Jordan Malinowski' , Bulgarian Academy of Sciences, Acad. Georgy Bonchev Str., bl. 109, 1113 Sofia (Bulgaria); Starbov, N.; Starbova, K. [Central Laboratory of Photoprocesses ' Acad. Jordan Malinowski' , Bulgarian Academy of Sciences, Acad. Georgy Bonchev Str., bl. 109, 1113 Sofia (Bulgaria); Perea, A.; Solis, J. [Instituto de Optica ' Daza de Valdes' , CSIC, 28006 Madrid (Spain)

    2009-11-15

    Excimer laser processing is applied for tailoring the surface morphology and phase composition of CeO{sub 2} ceramic thin films. E-beam evaporation technique is used to deposit samples on stainless steel and silicate glass substrates. The films are then irradiated with ArF* excimer laser pulses under different exposure conditions. Scanning electron microscopy, optical spectrophotometry, X-ray diffractometry and EDS microanalysis are used to characterize the non-irradiated and laser-processed films. Upon UV laser exposure there is large increase of the surface roughness that is accompanied by photo-darkening and ceria reduction. It is shown that the laser induced changes in the CeO{sub 2} films facilitate the deposition of metal nano-aggregates in a commercial copper electroless plating bath. The significance of laser modification as a novel approach for the production of CeO{sub 2} based thin film catalysts is discussed.

  3. Numerical study on increasing mass flow ratio by energy deposition of high frequency pulsed laser

    International Nuclear Information System (INIS)

    Wang Diankai; Hong Yanji; Li Qian

    2013-01-01

    The mass flow ratio (MFR) of air breathing ramjet inlet would be decreased, when the Mach number is lower than the designed value. High frequency pulsed laser energy was deposited upstream of the cowl lip to reflect the stream so as to increase the MFR. When the Mach number of the flow was 5.0, and the static pressure and temperature of the flow were 2 551.6 Pa and 116.7 K, respectively, two-dimensional non-stationary compressible RANS equations were solved with upwind format to study the mechanisms of increasing MFR by high frequency pulsed laser energy deposition. The laser deposition frequency was 100 kHz and the average power was 500 W. The crossing point of the first forebody oblique shock and extension line of cowl lip was selected as the expected point. Then the deposition position was optimized by searching near the expected point. The results indicate that with the optimization of laser energy deposition position, the MFR would be increased from 63% to 97%. The potential value of increasing MFR by high frequency pulsed laser energy deposition was proved. The method for selection of the energy deposition position was also presented. (authors)

  4. Parameters nanodimensional zinc films deposited by the laser method in vacuum

    International Nuclear Information System (INIS)

    Goncharov, V.K.; Gusakov, G.A.; Puzyrev, M.V.

    2013-01-01

    The investigation of the thickness and structure of a zinc films surface produced by the laser-plasma deposition has been carried out. The dependence of a film thickness and surface structure from laser radiation intensity has been determined. Threshold intensity has been determined when an evaporation of a target material begins. (authors)

  5. High laser-fluence deposition of organic materials in water ice matrices by ''MAPLE''

    DEFF Research Database (Denmark)

    Christensen, Bo Toftmann; Rodrigo, K.; Schou, Jørgen

    2005-01-01

    Matrix assisted pulsed laser evaporation (MAPLE) is a deposition technique for organic material. Water ice was used as a matrix for the biotechnologically important guest material, polyethylene glycol (PEG), for concentrations from 0.5 to 4 wt.%. The target was irradiated with 6 ns laser pulses...

  6. Parameters of nanodimensional aluminium films deposited by the laser method in vacuum

    International Nuclear Information System (INIS)

    Gusakov, G.A.; Ismailov, D.R.; Puzyrev, M.V.

    2011-01-01

    The investigation of the thickness and structure of a aluminium films surface produced by the laser-plasma deposition has been carried out. The dependence of a film thickness from laser radiation intensity has been determined. Threshold intensity has been determined when an evaporation of a target material begins. (authors)

  7. Laser Deposition of Polymer Nanocomposite Thin Films and Hard Materials and Their Optical Characterization

    Science.gov (United States)

    2013-12-05

    visible light on instruments such as microscope tips and micro- surgical tools. Hard carbon known as diamond-like carbon films produced by pulsed laser ...visible (610 nm) LED source and a supplemental infra-red 980-nm laser diode (for the studies of the upconversion fluorescence). The basic package...5/2013 Final Performance Report 15 Sep 2012- 14 Sep 2013 LASER DEPOSITION OF POLYMER NANOCOMPOSITE THIN FILMS AND HARD MATERIALS AND THEIR OPTICAL

  8. SiC.sub.x./sub. layers prepared by hybrid laser deposition and PLD

    Czech Academy of Sciences Publication Activity Database

    Jelínek, Miroslav; Kocourek, Tomáš; Zemek, Josef; Kadlec, J.

    2009-01-01

    Roč. 6, S1 (2009), s. 5366-5369 ISSN 1612-8850 Institutional research plan: CEZ:AV0Z10100521 Keywords : SiC * composites * hybrid deposition * puls laser deposition * magnetron Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 4.037, year: 2009

  9. Determination of the Young's modulus of pulsed laser deposited epitaxial PZT thin films

    NARCIS (Netherlands)

    Nazeer, H.; Nguyen, Duc Minh; Woldering, L.A.; Abelmann, Leon; Rijnders, Augustinus J.H.M.; Elwenspoek, Michael Curt

    2011-01-01

    We determined the Young’s modulus of pulsed laser deposited epitaxially grown PbZr0.52Ti0.48O3 (PZT) thin films on microcantilevers by measuring the difference in cantilever resonance frequency before and after deposition. By carefully optimizing the accuracy of this technique, we were able to show

  10. Pure and Sn-doped ZnO films produced by pulsed laser deposition

    DEFF Research Database (Denmark)

    Holmelund, E.; Schou, Jørgen; Tougaard, S.

    2002-01-01

    A new technique, metronome doping, has been used for doping of films during pulsed laser deposition (PLD). This technique makes it possible to dope continuously during film growth with different concentrations of a dopant in one deposition sequence. Films of pure and doped ZnO have been produced...

  11. Microstructure of pulsed-laser deposited PZT on polished and annealed MGO substrates

    NARCIS (Netherlands)

    King, S.L.; Coccia, L.G.; Gardeniers, Johannes G.E.; Boyd, I.W.

    1996-01-01

    Thin films of Lead-Zirconate-Titanate (PZT) have been grown by pulsed-laser-deposition (PLD) onto polished MgO substrates both with and without pre-annealing. The surface morphology of polished MgO substrates, which are widely used for deposition, is examined by AFM. Commercially available,

  12. Nanosecond laser ablation and deposition of silver, copper, zinc and tin

    DEFF Research Database (Denmark)

    Cazzaniga, Andrea Carlo; Ettlinger, Rebecca Bolt; Canulescu, Stela

    2014-01-01

    Nanosecond pulsed laser deposition of different metals (Ag, Cu, Sn, Zn) has been studied in high vacuum at a laser wavelength of 355 nm and pulse length of 6 ns. The deposition rate is roughly similar for Sn, Cu and Ag, which have comparable cohesive energies, and much higher for the deposition...... of Zn which has a low cohesive energy. The deposition rate for all metals is strongly correlated with the total ablation yield, i.e., the total mass ablated per pulse, reported in the literature except for Sn, for which the deposition rate is low, but the total ablation yield is high. This may...... be explained by the continuous erosion by nanoparticles during deposition of the Sn films which appear to have a much rougher surface than those of the other metals studied in the present work....

  13. Hot working behavior of selective laser melted and laser metal deposited Inconel 718

    Science.gov (United States)

    Bambach, Markus; Sizova, Irina

    2018-05-01

    The production of Nickel-based high-temperature components is of great importance for the transport and energy sector. Forging of high-temperature alloys often requires expensive dies, multiple forming steps and leads to forged parts with tolerances that require machining to create the final shape and a large amount of scrap. Additive manufacturing offers the possibility to print the desired shapes directly as net-shape components, requiring only little additional effort in machining. Especially for high-temperature alloys carrying a large amount of energy per unit mass, additive manufacturing could be more energy-efficient than forging if the energy contained in the machining scrap exceeds the energy needed for powder production and laser processing. However, the microstructure and performance of 3d-printed parts will not reach the level of forged material unless further expensive processes such as hot-isostatic pressing are used. Using the design freedom and possibilities to locally engineer material, additive manufacturing could be combined with forging operations to novel process chains, offering the possibility to reduce the number of forging steps and to create near-net shape forgings with desired local properties. Some innovative process chains combining additive manufacturing and forging have been patented recently, but almost no scientific knowledge on the workability of 3D printed preforms exists. The present study investigates the flow stress and microstructure evolution during hot working of pre-forms produced by laser powder deposition and selective laser melting (Figure 1) and puts forward a model for the flow stress.

  14. Laser ion deposition and implantation into different substrates

    Czech Academy of Sciences Publication Activity Database

    Cutroneo, Mariapompea

    2017-01-01

    Roč. 25, č. 1 (2017), s. 23-31 ISSN 1213-2705. [Letní vakuová škola vakuové techniky 2017. Topolčianky, 31.05.2017-01.06.2017] R&D Projects: GA MŠk LM2015056 Institutional support: RVO:61389005 Keywords : time-of-flight * laser beams * ion spectrometers Subject RIV: BH - Optics, Masers, Lasers OBOR OECD: Optics (including laser optics and quantum optics)

  15. Modeling the energy deposition in the Aurora KrF laser amplifier chain

    International Nuclear Information System (INIS)

    Comly, J.C.; Czuchlewski, S.J.; Greene, D.P.; Hanson, D.E.; Krohn, B.J.; McCown, A.W.

    1988-01-01

    Monte Carlo calculations model the energy depositions by highly energetic electron beams into the cavities of the four KrF laser amplifiers in the Aurora chain. Deposited energy density distributions are presented and studied as functions of e-beam energy and gas pressure. Results are useful for analyzing small signal gain (SSG) measurements and optimizing deposition in future experiments. 7 refs., 7 figs., 1 tab

  16. Characterization of hydroxyapatite coating by pulse laser deposition technique on stainless steel 316 L by varying laser energy

    International Nuclear Information System (INIS)

    Khandelwal, Himanshu; Singh, Gurbhinder; Agrawal, Khelendra; Prakash, Satya; Agarwal, R.D.

    2013-01-01

    Highlights: ► Hydroxyapatite coating was successfully deposited on stainless steel substrate by pulse laser deposition at different energy levels (i.e. 300 mJ and 500 mJ, respectively). ► Variation in laser energy affects the surface characteristic of hydroxyapatite coating (particle size, surface roughness, uniformity, Ca/P ratio). ► Laser energy between 300 mJ and 500 mJ is the optimal choice for obtaining ideal Ca/P ratio. - Abstract: Hydroxyapatite is an attractive biomaterial mainly used in bone and tooth implants because it closely resembles human tooth and bone mineral and has proven to be biologically compatible with these tissues. In spite of this advantage of hydroxyapatite it has also certain limitation like inferior mechanical properties which do not make it suitable for long term load bearing applications; hence a lot of research is going on in the development of hydroxyapatite coating over various metallic implants. These metallic implants have good biocompatibility and mechanical properties. The aim of the present work is to deposit hydroxyapatite coating over stainless steel grade 316 L by pulse laser deposition technique by varying laser energy. To know the effect of this variation, the coatings were than characterized in detail by X-ray diffraction, finite emission-scanning electron microscope, atomic force microscope and energy dispersive X-ray spectroscopy.

  17. Heating effect of substrate of pulsed laser ablation deposition technique towards the orientation of carbon microstructure

    International Nuclear Information System (INIS)

    Choy, L.S.; Irmawati Ramli; Noorhana Yahya; Abdul Halim Shaari

    2009-01-01

    Full text: Carbon thin film has been successfully deposited by second harmonic Nd:YAG pulsed laser ablation deposition, PLAD. The topology and morphology of the deposited layers was studied by scanning electron microscopy (SEM) whereas emission dispersion X-ray (EDX) was used to determine the existence of elements that constitutes the microstructure. Substrate heated at 500 degree Celsius during the laser ablation showed the most homogenous lollipop microstructure as compared to mainly pillars of microstructure ablated at lower substrate temperature. It is found that this also avoid further diffusion of carbon into catalyst in forming iron carbide. (author)

  18. Thick film laser induced forward transfer for deposition of thermally and mechanically sensitive materials

    International Nuclear Information System (INIS)

    Kattamis, Nicholas T.; Purnick, Priscilla E.; Weiss, Ron; Arnold, Craig B.

    2007-01-01

    Laser forward transfer processes incorporating thin absorbing films can be used to deposit robust organic and inorganic materials but the deposition of more delicate materials has remained elusive due to contamination and stress induced during the transfer process. Here, we present the approach to high resolution patterning of sensitive materials by incorporating a thick film polymer absorbing layer that is able to dissipate shock energy through mechanical deformation. Multiple mechanisms for transfer as a function of incident laser energy are observed and we show viable and contamination-free deposition of living mammalian embryonic stem cells

  19. Defect studies of thin ZnO films prepared by pulsed laser deposition

    International Nuclear Information System (INIS)

    Vlček, M; Čížek, J; Procházka, I; Novotný, M; Bulíř, J; Lančok, J; Anwand, W; Brauer, G; Mosnier, J-P

    2014-01-01

    Thin ZnO films were grown by pulsed laser deposition on four different substrates: sapphire (0 0 0 1), MgO (1 0 0), fused silica and nanocrystalline synthetic diamond. Defect studies by slow positron implantation spectroscopy (SPIS) revealed significantly higher concentration of defects in the studied films when compared to a bulk ZnO single crystal. The concentration of defects in the films deposited on single crystal sapphire and MgO substrates is higher than in the films deposited on amorphous fused silica substrate and nanocrystalline synthetic diamond. Furthermore, the effect of deposition temperature on film quality was investigated in ZnO films deposited on synthetic diamond substrates. Defect studies performed by SPIS revealed that the concentration of defects firstly decreases with increasing deposition temperature, but at too high deposition temperatures it increases again. The lowest concentration of defects was found in the film deposited at 450° C.

  20. Diamond coating deposition by synergy of thermal and laser methods-A problem revisited

    International Nuclear Information System (INIS)

    Ristic, Gordana S.; Trtica, Milan S.; Bogdanov, Zarko D.; Romcevic, Nebojsa Z.; Miljanic, Scepan S.

    2007-01-01

    Diamond coatings were deposited by synergy of the hot filament CVD method and the pulse TEA CO 2 laser, in spectroactive and spectroinactive diamond precursor atmospheres. Resulting diamond coatings are interpreted relying on evidence of scanning electron microscopy as well as microRaman spectroscopy. Thermal synergy component (hot filament) possesses an activating agent for diamond deposition, and contributes significantly to quality and extent of diamond deposition. Laser synergy component comprises a solid surface modification as well as the spectroactive gaseous atmosphere modification. Surface modification consists in changes of the diamond coating being deposited and, at the same time, in changes of the substrate surface structure. Laser modification of the spectroactive diamond precursor atmosphere means specific consumption of the precursor, which enables to skip the deposition on a defined substrate location. The resulting process of diamond coating elimination from certain, desired locations using the CO 2 laser might contribute to tailoring diamond coatings for particular applications. Additionally, the substrate laser modification could be optimized by choice of a proper spectroactive precursor concentration, or by a laser radiation multiple pass through an absorbing medium

  1. Characterization of ethylcellulose and hydroxypropyl methylcellulose thin films deposited by matrix-assisted pulsed laser evaporation

    Energy Technology Data Exchange (ETDEWEB)

    Palla-Papavlu, A., E-mail: apalla@nipne.ro [National Institute for Lasers, Plasma and Radiation Physics, PO Box MG-36, Magurele, RO-077125 Bucharest (Romania); Rusen, L.; Dinca, V.; Filipescu, M. [National Institute for Lasers, Plasma and Radiation Physics, PO Box MG-36, Magurele, RO-077125 Bucharest (Romania); Lippert, T. [Paul Scherrer Institut, General Energy Research Department, 5232 Villigen PSI (Switzerland); Dinescu, M. [National Institute for Lasers, Plasma and Radiation Physics, PO Box MG-36, Magurele, RO-077125 Bucharest (Romania)

    2014-05-01

    In this study is reported the deposition of hydroxypropyl methylcellulose (HPMC) and ethylcellulose (EC) by matrix-assisted pulsed laser evaporation (MAPLE). Both HPMC and EC were deposited on silicon substrates using a Nd:YAG laser (266 nm, 5 ns laser pulse and 10 Hz repetition rate) and then characterized by atomic force microscopy and Fourier transform infrared spectroscopy. It was found that for laser fluences up to 450 mJ/cm{sup 2} the structure of the deposited HPMC and EC polymer in the thin film resembles to the bulk. Morphological investigations reveal island features on the surface of the EC thin films, and pores onto the HPMC polymer films. The obtained results indicate that MAPLE may be an alternative technique for the fabrication of new systems with desired drug release profile.

  2. Applications of interface controlled pulsed-laser deposited polymer films in field-effect transistors

    Science.gov (United States)

    Adil, Danish; Ukah, Ndubuisi; Guha, Suchi; Gupta, Ram; Ghosh, Kartik

    2010-03-01

    Matrix assisted pulsed laser evaporation, a derivative of pulsed laser deposition (PLD), is an alternative method of depositing polymer and biomaterial films that allows homogeneous film coverage of high molecular weight organic materials for layer-by-layer growth without any laser induced damage. Polyfluorene (PF)-based conjugated polymers have attracted considerable attention in organic field-effect transistors (FETs). A co-polymer of PF (PFB) was deposited as a thin film using matrix assisted PLD employing a KrF excimer laser. Electrical characteristics of FETs fabricated using these PLD grown films were compared to those of FETs using spin-coated films. We show that threshold voltages, on/off ratios, and charge carrier motilities are significantly improved in PLD grown films. This is attributed to an improved dielectric-polymer interface.

  3. Characterization of ethylcellulose and hydroxypropyl methylcellulose thin films deposited by matrix-assisted pulsed laser evaporation

    Science.gov (United States)

    Palla-Papavlu, A.; Rusen, L.; Dinca, V.; Filipescu, M.; Lippert, T.; Dinescu, M.

    2014-05-01

    In this study is reported the deposition of hydroxypropyl methylcellulose (HPMC) and ethylcellulose (EC) by matrix-assisted pulsed laser evaporation (MAPLE). Both HPMC and EC were deposited on silicon substrates using a Nd:YAG laser (266 nm, 5 ns laser pulse and 10 Hz repetition rate) and then characterized by atomic force microscopy and Fourier transform infrared spectroscopy. It was found that for laser fluences up to 450 mJ/cm2 the structure of the deposited HPMC and EC polymer in the thin film resembles to the bulk. Morphological investigations reveal island features on the surface of the EC thin films, and pores onto the HPMC polymer films. The obtained results indicate that MAPLE may be an alternative technique for the fabrication of new systems with desired drug release profile.

  4. Laser Direct Metal Deposition of 2024 Al Alloy: Trace Geometry Prediction via Machine Learning.

    Science.gov (United States)

    Caiazzo, Fabrizia; Caggiano, Alessandra

    2018-03-19

    Laser direct metal deposition is an advanced additive manufacturing technology suitably applicable in maintenance, repair, and overhaul of high-cost products, allowing for minimal distortion of the workpiece, reduced heat affected zones, and superior surface quality. Special interest is growing for the repair and coating of 2024 aluminum alloy parts, extensively utilized for a wide range of applications in the automotive, military, and aerospace sectors due to its excellent plasticity, corrosion resistance, electric conductivity, and strength-to-weight ratio. A critical issue in the laser direct metal deposition process is related to the geometrical parameters of the cross-section of the deposited metal trace that should be controlled to meet the part specifications. In this research, a machine learning approach based on artificial neural networks is developed to find the correlation between the laser metal deposition process parameters and the output geometrical parameters of the deposited metal trace produced by laser direct metal deposition on 5-mm-thick 2024 aluminum alloy plates. The results show that the neural network-based machine learning paradigm is able to accurately estimate the appropriate process parameters required to obtain a specified geometry for the deposited metal trace.

  5. Laser Direct Metal Deposition of 2024 Al Alloy: Trace Geometry Prediction via Machine Learning

    Directory of Open Access Journals (Sweden)

    Fabrizia Caiazzo

    2018-03-01

    Full Text Available Laser direct metal deposition is an advanced additive manufacturing technology suitably applicable in maintenance, repair, and overhaul of high-cost products, allowing for minimal distortion of the workpiece, reduced heat affected zones, and superior surface quality. Special interest is growing for the repair and coating of 2024 aluminum alloy parts, extensively utilized for a wide range of applications in the automotive, military, and aerospace sectors due to its excellent plasticity, corrosion resistance, electric conductivity, and strength-to-weight ratio. A critical issue in the laser direct metal deposition process is related to the geometrical parameters of the cross-section of the deposited metal trace that should be controlled to meet the part specifications. In this research, a machine learning approach based on artificial neural networks is developed to find the correlation between the laser metal deposition process parameters and the output geometrical parameters of the deposited metal trace produced by laser direct metal deposition on 5-mm-thick 2024 aluminum alloy plates. The results show that the neural network-based machine learning paradigm is able to accurately estimate the appropriate process parameters required to obtain a specified geometry for the deposited metal trace.

  6. Boron distribution in silicon after excimer laser annealing with multiple pulses

    International Nuclear Information System (INIS)

    Monakhov, E.V.; Svensson, B.G.; Linnarsson, M.K.; La Magna, A.; Italia, M.; Privitera, V.; Fortunato, G.; Cuscuna, M.; Mariucci, L.

    2005-01-01

    We have studied B re-distribution in Si after excimer laser annealing (ELA) with multiple laser pulses. B was implanted using both B and BF 2 ions with energies from 1 to 20 keV and doses of 1 x 10 14 and 1 x 10 15 cm -2 . ELA with the number of pulses from 1 to 100 was performed in vacuum with the sample kept at room temperature and 450 deg. C. Independently of the implantation parameters and the ELA conditions used, a peak in the B concentration is observed near the maximum melting depth after 10 pulses of ELA. A detailed study has revealed that B accumulates at the maximum melt depth gradually with the number of ELA pulses. An increase in the carrier concentration at the maximum melt depth is observed after ELA with 100 pulses. No structural defects have been detected by transmission electron microscopy in the region of the B accumulation

  7. Nanometric onion-like hollow spheres in laser synthesized boron nitride ultrafine powder

    Energy Technology Data Exchange (ETDEWEB)

    Boulanger, L; Willaime, F [CEA Centre d` Etudes de Saclay, 91 - Gif-sur-Yvette (France). Direction des Technologies Avancees; Cauchetier, M [CEA Centre d` Etudes de Saclay, 91 - Gif-sur-Yvette (France). Dept. de Recherche sur l` Etat Condense, les Atomes et les Molecules

    1994-12-31

    TEM observations of ultra-fine B Cl{sub 3}-N H{sub 3} powders elaborated by an innovative method, laser pyrolysis, are presented. The resulting microstructures in the as received state and after thermal treatments show small nanometric scale configurations close to the ones met with carbon, such as an hollowed configuration of onions but at a much smaller scale than with carbon. 3 figs., 3 refs.

  8. Laser-assisted chemical vapor deposition setup for fast synthesis of graphene patterns

    Science.gov (United States)

    Zhang, Chentao; Zhang, Jianhuan; Lin, Kun; Huang, Yuanqing

    2017-05-01

    An automatic setup based on the laser-assisted chemical vapor deposition method has been developed for the rapid synthesis of graphene patterns. The key components of this setup include a laser beam control and focusing unit, a laser spot monitoring unit, and a vacuum and flow control unit. A laser beam with precision control of laser power is focused on the surface of a nickel foil substrate by the laser beam control and focusing unit for localized heating. A rapid heating and cooling process at the localized region is induced by the relative movement between the focalized laser spot and the nickel foil substrate, which causes the decomposing of gaseous hydrocarbon and the out-diffusing of excess carbon atoms to form graphene patterns on the laser scanning path. All the fabrication parameters that affect the quality and number of graphene layers, such as laser power, laser spot size, laser scanning speed, pressure of vacuum chamber, and flow rates of gases, can be precisely controlled and monitored during the preparation of graphene patterns. A simulation of temperature distribution was carried out via the finite element method, providing a scientific guidance for the regulation of temperature distribution during experiments. A multi-layer graphene ribbon with few defects was synthesized to verify its performance of the rapid growth of high-quality graphene patterns. Furthermore, this setup has potential applications in other laser-based graphene synthesis and processing.

  9. Study of titania nanorod films deposited by matrix-assisted pulsed laser evaporation as a function of laser fluence

    Science.gov (United States)

    Caricato, A. P.; Belviso, M. R.; Catalano, M.; Cesaria, M.; Cozzoli, P. D.; Luches, A.; Manera, M. G.; Martino, M.; Rella, R.; Taurino, A.

    2011-11-01

    Chemically synthesized brookite titanium dioxide (TiO2) nanorods with average diameter and length dimensions of 3-4 nm and 35-50 nm, respectively, were deposited by the matrix-assisted pulsed laser evaporation technique. A toluene nanorod solution was frozen at the liquid-nitrogen temperature and irradiated with a KrF excimer laser ( λ=248 nm, τ=20 ns) at the repetition rate of 10 Hz, at different fluences (25 to 350 mJ/cm2). The deposited films were structurally characterized by high-resolution scanning and transmission electron microscopy. single-crystal Si wafers and carbon-coated Cu grids were used as substrates. Structural analyses evidenced the occurrence of brookite-phase crystalline nanospheres coexisting with individually distinguishable TiO2 nanorods in the films deposited at fluences varying from 50 to 350 mJ/cm2. Nanostructured TiO2 films comprising only nanorods were deposited by lowering the laser fluence to 25 mJ/cm2. The observed shape and phase transitions of the nanorods are discussed taking into account the laser-induced heating effects, reduced melting temperature and size-dependent thermodynamic stability of nanoscale TiO2.

  10. Laser detritiation and co-deposited layer characterisation for future ITER Installation

    International Nuclear Information System (INIS)

    Semerok, Alexandre; Brygo, Francois; Fomichev, Sergey V.; Champonnois, Francois; Weulersse, Jean-Marc; Thro, Pierre-Yves; Fichet, Pascal; Grisolia, Christian

    2006-01-01

    The experimental equipment in combination with pulsed Nd-YAG lasers was developed and applied to investigate co-deposited layer characterisation and ablation. Heating and ablation regimes were distinguished by ablation threshold fluence that was determined experimentally for graphite samples from TexTor (Germany) and TORE SUPRA (France) tokamaks. With 100 ns pulses, the ablation threshold for graphite substrate (2.5±0.5 J/cm 2 ) was much higher than the one for co-deposited layer (0.4±0.1 J cm -2 ). These threshold features are very promising to ensure self-controlled laser cleaning without substrate surface damage. The obtained optimal conditions (laser fluence F=1-2 J/cm 2 , 10-20 kHz repetition rate) were applied for co-deposited layer cleaning. The TexTor 50 μm thickness layer was almost completely removed after a single scanning without any damage of the graphite substrate. Cleaning rate of 0.2 m 2 /hour was demonstrated experimentally for 20 W mean laser power. A theoretical model of a complex surface heating (graphite or metal with a co-deposited layer) was developed to explain the experimental results and to obtain laser cleaning optimisation. A good agreement of the theoretical data with the experimental results was obtained. The studies on LIBS method for co-deposited layer characterisation have determined the analytical spectral lines for hydrogen, carbon, and other impurities (B, Fe, Si, and Cu) in TexTor graphite tile. The obtained results should be regarded optimistic for co-deposited layers characterisation by LIBS method. The development of certain laser methods and their application for in-situ detritiation and co-deposited layer characterisation are presented and discussed. (authors)

  11. Subsurface overheating of targets in laser deposition on superconducting films

    International Nuclear Information System (INIS)

    Lin, D.L.; Liu, Z.D.; Li, X.; George, T.F.

    1994-01-01

    The possibility of internal explosion in the laser ablation of superconductor targets is investigated by calculating the temperature profile inside the target. The equation of heat conduction is employed and the temperature dependence of all characteristic parameters is determined empirically. It is found that, in general, a local overheated spot appears as long as the intensity of incident laser pulses is sufficiently high. Conditions to avoid such overheating are discussed. (orig.). Letter-to-the-editor

  12. Laser deposition of sulfonated phthalocyanines for gas sensors

    Czech Academy of Sciences Publication Activity Database

    Fitl, Přemysl; Vrňata, M.; Kopecký, D.; Vlček, J.; Škodová, J.; Bulíř, Jiří; Novotný, Michal; Pokorný, Petr

    2014-01-01

    Roč. 302, MAY (2014), s. 37-41 ISSN 0169-4332. [European-Materials-Research-Society Symposium on Laser Material Interactions for Micro- and Nano- Applications /5./. Strasbourg, 27.05.2013-31.05.2013] R&D Projects: GA ČR(CZ) GAP108/11/1298 Institutional support: RVO:68378271 Keywords : Matrix Assisted Pulsed Laser Evaporation * substituted phthalocyanine s * gas sensors * impedance measurements Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.711, year: 2014

  13. Modelling of the energy density deposition profiles of ultrashort laser pulses focused in optical media

    International Nuclear Information System (INIS)

    Vidal, F; Lavertu, P-L; Bigaouette, N; Moore, F; Brunette, I; Giguere, D; Kieffer, J-C; Olivie, G; Ozaki, T

    2007-01-01

    The propagation of ultrashort laser pulses in dense optical media is investigated theoretically by solving numerically the nonlinear Schroedinger equation. It is shown that the maximum energy density deposition as a function of the pulse energy presents a well-defined threshold that increases with the pulse duration. As a consequence of plasma defocusing, the maximum energy density deposition is generally smaller and the size of the energy deposition zone is generally larger for shorter pulses. Nevertheless, significant values of the energy density deposition can be obtained near threshold, i.e., at lower energy than for longer pulses

  14. Energy deposition, heat flow, and rapid solidification during laser and electron beam irradiation of materials

    Energy Technology Data Exchange (ETDEWEB)

    White, C.W.; Aziz, M.J.

    1985-10-01

    The fundamentals of energy deposition, heat flow, and rapid solidification during energy deposition from lasers and electron beams is reviewed. Emphasis is placed on the deposition of energy from pulsed sources (10 to 100 ns pulse duration time) in order to achieve high heating and cooling rates (10/sup 8/ to 10/sup 10/ /sup 0/C/s) in the near surface region. The response of both metals and semiconductors to pulsed energy deposition is considered. Guidelines are presented for the choice of energy source, wavelength, and pulse duration time.

  15. Pulsed 1064 nm Nd-YAG Laser Deposition of Titanium on Silicon in a Nitrogen Environment

    Directory of Open Access Journals (Sweden)

    Wilson Garcia

    1999-12-01

    Full Text Available Pulsed laser deposition (PLD technique was demonstrated for the deposition of titanium nitride (TiN thin films on Si (100 substrates. A 1064 nm pulsed Nd-YAG laser is focused on a titanium (99.5% target in a nitrogen environment to generate the atomic flux needed for the film deposition. Spectroscopic analysis of the plasma emission indicates the presence of atomic titanium and nitrogen, which are the precursors of TiN. Images of the films grown at different laser pulse energies show an increase in the number and size of deposited droplets and clusters with increasing laser pulse energy. A decrease in cluster and droplet size is also observed, with an increase in substrate temperature. EDS data show an increase in the titanium peak relative to the silicon as the ambient nitrogen pressure is decreased. An increase in deposition time was found to result in large clusters and irregularly shaped structures on the substrate. Post-deposition annealing of the samples enhanced the crystallinity of the film.

  16. Ga–Ge–Te amorphous thin films fabricated by pulsed laser deposition

    International Nuclear Information System (INIS)

    Němec, P.; Nazabal, V.; Dussauze, M.; Ma, H.-L.; Bouyrie, Y.; Zhang, X.-H.

    2013-01-01

    UV pulsed laser deposition was employed for the fabrication of amorphous Ga–Ge–Te thin films. The local structure of the bulk glasses as well as corresponding thin films was studied using Raman scattering spectroscopy; the main structural motifs were found to be [GeTe 4 ], eventually [GaTe 4 ] corner-sharing tetrahedra and disordered Te chains. Optical functions of the films (refractive index, extinction coefficient) were characterized by variable angle spectroscopic ellipsometry. Photostability experiments showed all Ga–Ge–Te laser deposited films to be stable against 1550 nm laser irradiation in an as-deposited state. In an annealed state, the most photostable composition seems to be Ga 10 Ge 15 Te 75 . This particular composition was further studied from the point of view of thermal stability and stability against ageing in as-deposited state. - Highlights: ► Pulsed laser deposition was used for fabrication of amorphous Ga–Ge–Te thin films. ► GeTe 4 , eventually GaTe 4 tetrahedra and disordered Te chains form the film structure. ► Optical functions of Ge–Ga–Te films were characterized by spectroscopic ellipsometry. ► All as-deposited Ga–Ge–Te thin films are stable against 1550 nm irradiation. ► In annealed state, the most photostable composition seems to be Ga 10 Ge 15 Te 75

  17. Segregation and Microstructure in the Fusion zones of Laser joints of Al-10%Si coated Boron Steel

    Energy Technology Data Exchange (ETDEWEB)

    Kwon, Min-Suck [Hyundai Hysco Co., Ltd, Ulsan (Korea, Republic of); Kang, Chung-Yun [Pusan National University, Busan (Korea, Republic of)

    2016-01-15

    During laser welding of Al-10 wt%Si coated boron steel, which is used in the automotive industry, Al and Si, which are elements of the coated layer, are diluted in the fusion zone; then, the concentration of Al and Si is distributed randomly. The segregation can be roughly classified into two types. The first forms along the fusion boundary in a long comet shape in the depth direction of the fusion zone. The Al concentration of this comet shape is Fe3(Al, Si)and the material is composed of a single phase. This segregation phase is formed at the same time as the melting of the base metal and the diluting of the coated layer of Fe(Al, Si), without reaction of the molten metal. Then, a static dissolution reaction of the diluted coated layer occurs, scarcely stirring the molten metal; the concentration of Al and Si is reduced to 1/2. The second type of segregation is formed by martensite and bainte in the fusion zone of the segregated zone; the composition of Al is 1.28⁓0.48 wt%. Considering the results of the analysis of the Fe(Si,C, Mn,Cr)-xwt%Al quasi binary phase diagram, performed using Thermo-Calc, segregated zones are solidified in the form “L→L+α→γ”. Also, and as a result, it was found that the phase transformation from γ under-cooling results in the solid phase, which undergoes bainite transformation and is transformed to martensite.

  18. Segregation and Microstructure in the Fusion zones of Laser joints of Al-10%Si coated Boron Steel

    International Nuclear Information System (INIS)

    Kwon, Min-Suck; Kang, Chung-Yun

    2016-01-01

    During laser welding of Al-10 wt%Si coated boron steel, which is used in the automotive industry, Al and Si, which are elements of the coated layer, are diluted in the fusion zone; then, the concentration of Al and Si is distributed randomly. The segregation can be roughly classified into two types. The first forms along the fusion boundary in a long comet shape in the depth direction of the fusion zone. The Al concentration of this comet shape is Fe3(Al, Si)and the material is composed of a single phase. This segregation phase is formed at the same time as the melting of the base metal and the diluting of the coated layer of Fe(Al, Si), without reaction of the molten metal. Then, a static dissolution reaction of the diluted coated layer occurs, scarcely stirring the molten metal; the concentration of Al and Si is reduced to 1/2. The second type of segregation is formed by martensite and bainte in the fusion zone of the segregated zone; the composition of Al is 1.28⁓0.48 wt%. Considering the results of the analysis of the Fe(Si,C, Mn,Cr)-xwt%Al quasi binary phase diagram, performed using Thermo-Calc, segregated zones are solidified in the form “L→L+α→γ”. Also, and as a result, it was found that the phase transformation from γ under-cooling results in the solid phase, which undergoes bainite transformation and is transformed to martensite.

  19. Tritium recovery from co-deposited layers using 193-nm laser

    Science.gov (United States)

    Shu, W. M.; Kawakubo, Y.; Nishi, M. F.

    Recovery of tritium from co-deposited layers formed in deuterium-tritium plasma operations of the TFTR (Tokamak Fusion Test Reactor) was investigated by the use of an ArF excimer laser operating at the wavelength of 193 nm. At the laser energy density of 0.1 J/cm2, a transient spike of the tritium-release rate was observed at initial irradiation. Hydrogen isotopes were released in the form of hydrogen-isotope molecules during the laser irradiation in vacuum, suggesting that tritium can be recovered readily from the released gases. In a second experiment, hydrogen (tritium) recovery from the co-deposited layers on JT-60 tiles that had experienced hydrogen-plasma operations was investigated by laser ablation with a focused beam of the excimer laser. The removal rate of the co-deposited layers was quite low when the laser energy density was smaller than the ablation threshold (1.0 J/cm2), but reached 1.1 μm/pulse at the laser energy density of 7.6 J/cm2. The effective absorption coefficient in the co-deposited layers at the laser wavelength was determined to be 1.9 μm-1. The temperature of the surface during the irradiation at the laser energy density of 0.5 J/cm2 was measured on the basis of Planck's law of radiation, and the maximum temperature during the irradiation decreased from 3570 K at the initial irradiation to 2550 K at the 1000th pulse of the irradiation.

  20. Boron-doped zinc oxide thin films grown by metal organic chemical vapor deposition for bifacial a-Si:H/c-Si heterojunction solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Zeng, Xiangbin, E-mail: eexbzeng@mail.hust.edu.cn; Wen, Xixing; Sun, Xiaohu; Liao, Wugang; Wen, Yangyang

    2016-04-30

    Boron-doped zinc oxide (BZO) films were grown by metal organic chemical vapor deposition. The influence of B{sub 2}H{sub 6} flow rate and substrate temperature on the microstructure, optical, and electrical properties of BZO films was investigated by X-ray diffraction spectrum, scanning electron microscope, optical transmittance spectrum, and Hall measurements. The BZO films with optical transmittance above 85% in the visible and infrared light range, resistivity of 0.9–1.0 × 10{sup −3} Ω cm, mobility of 16.5–25.5 cm{sup 2}/Vs, and carrier concentration of 2.2–2.7 × 10{sup 20} cm{sup −3} were deposited under optimized conditions. The optimum BZO films were applied on the bifacial BZO/p-type a-Si:H/i-type a-Si:H/n-type c-Si/i-type a-Si:H/n{sup +}-type a-Si:H/BZO heterojunction solar cell as both front and back transparent electrodes. Meanwhile, the bifacial heterojunction solar cell with indium tin oxide (ITO) as both front and back transparent electrodes was fabricated. The efficiencies of 17.788% (open-circuit voltage: 0.628 V, short-circuit current density: 41.756 mA/cm{sup 2} and fill factor: 0.678) and 16.443% (open-circuit voltage: 0.590 V, short-circuit current density: 36.515 mA/cm{sup 2} and fill factor: 0.762) were obtained on the a-Si/c-Si heterojunction solar cell with BZO and ITO transparent electrodes, respectively. - Highlights: • Boron-doped zinc oxide films with low resistivity were fabricated. • The boron-doped zinc oxide films have the high transmittance. • B-doped ZnO film was applied in a-Si:H/c-Si solar cell as transparent electrodes. • The a-Si:H/c-Si solar cell with efficiency of 17.788% was obtained.

  1. Boron-doped zinc oxide thin films grown by metal organic chemical vapor deposition for bifacial a-Si:H/c-Si heterojunction solar cells

    International Nuclear Information System (INIS)

    Zeng, Xiangbin; Wen, Xixing; Sun, Xiaohu; Liao, Wugang; Wen, Yangyang

    2016-01-01

    Boron-doped zinc oxide (BZO) films were grown by metal organic chemical vapor deposition. The influence of B_2H_6 flow rate and substrate temperature on the microstructure, optical, and electrical properties of BZO films was investigated by X-ray diffraction spectrum, scanning electron microscope, optical transmittance spectrum, and Hall measurements. The BZO films with optical transmittance above 85% in the visible and infrared light range, resistivity of 0.9–1.0 × 10"−"3 Ω cm, mobility of 16.5–25.5 cm"2/Vs, and carrier concentration of 2.2–2.7 × 10"2"0 cm"−"3 were deposited under optimized conditions. The optimum BZO films were applied on the bifacial BZO/p-type a-Si:H/i-type a-Si:H/n-type c-Si/i-type a-Si:H/n"+-type a-Si:H/BZO heterojunction solar cell as both front and back transparent electrodes. Meanwhile, the bifacial heterojunction solar cell with indium tin oxide (ITO) as both front and back transparent electrodes was fabricated. The efficiencies of 17.788% (open-circuit voltage: 0.628 V, short-circuit current density: 41.756 mA/cm"2 and fill factor: 0.678) and 16.443% (open-circuit voltage: 0.590 V, short-circuit current density: 36.515 mA/cm"2 and fill factor: 0.762) were obtained on the a-Si/c-Si heterojunction solar cell with BZO and ITO transparent electrodes, respectively. - Highlights: • Boron-doped zinc oxide films with low resistivity were fabricated. • The boron-doped zinc oxide films have the high transmittance. • B-doped ZnO film was applied in a-Si:H/c-Si solar cell as transparent electrodes. • The a-Si:H/c-Si solar cell with efficiency of 17.788% was obtained.

  2. Influence of laser pulse frequency on the microstructure of aluminum nitride thin films synthesized by pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Antonova, K., E-mail: krasa@issp.bas.bg [Institute of Solid State Physics, Bulgarian Academy of Sciences, Tzarigradsko Chaussee 72, Sofia 1784 (Bulgaria); Duta, L. [National Institute for Lasers, Plasma, and Radiation Physics, 409 Atomistilor Street, 077125 Magurele (Romania); Szekeres, A. [Institute of Solid State Physics, Bulgarian Academy of Sciences, Tzarigradsko Chaussee 72, Sofia 1784 (Bulgaria); Stan, G.E. [National Institute of Materials Physics, 105 bis Atomistilor Street, 077125 Magurele (Romania); Mihailescu, I.N. [National Institute for Lasers, Plasma, and Radiation Physics, 409 Atomistilor Street, 077125 Magurele (Romania); Anastasescu, M.; Stroescu, H.; Gartner, M. [Institute of Physical Chemistry, “Ilie Murgulescu”, Romanian Academy, 202 Splaiul Independentei, 060021 Bucharest (Romania)

    2017-02-01

    Highlights: • Study of pulsed laser deposited AlN films at different laser pulse frequencies. • Higher laser pulse frequency promotes nanocrystallites formation at temperature 450 °C. • AFM and GIXRD detect randomly oriented wurtzite AlN structures. • Characterization of the nanocrystallites’ orientation by FTIR reflectance spectra. • Berreman effect is registered in p-polarised radiation at large incidence angles. - Abstract: Aluminum Nitride (AlN) thin films were synthesized on Si (100) wafers at 450 °C by pulsed laser deposition. A polycrystalline AlN target was multipulsed irradiated in a nitrogen ambient, at different laser pulse repetition rate. Grazing Incidence X-Ray Diffraction and Atomic Force Microscopy analyses evidenced nanocrystallites with a hexagonal lattice in the amorphous AlN matrix. The thickness and optical constants of the layers were determined by infrared spectroscopic ellipsometry. The optical properties were studied by Fourier Transform Infrared reflectance spectroscopy in polarised oblique incidence radiation. Berreman effect was observed around the longitudinal phonon modes of the crystalline AlN component. Angular dependence of the A{sub 1}LO mode frequency was analysed and connected to the orientation of the particles’ optical axis to the substrate surface normal. The role of the laser pulse frequency on the layers’ properties is discussed on this basis.

  3. Structure and properties of TiC, VC, and TiC/VC thin films deposited by pulsed laser deposition

    International Nuclear Information System (INIS)

    Krzanowski, J.E.; Leuchtner, R.E.

    1996-01-01

    A study has been conducted on the mechanical, tribological and chemical properties of pulsed laser deposited (PLD) TiC, VC and TiC/VC thin films. The TiC films were deposited at 375 C and 5 mTorr Ar, while the TiC/VC films were deposited from a composite target at 475 C at pressures of base vacuum and 50 mTorr Ar. XRD analysis revealed the films had the expected B1 structure, although XPS analysis showed a significant oxygen content. Tribological studies were conducted using a ball-on-disk test, and the wear behavior depended on the surface condition and film composition. One TiC/VC film exhibited little wear but caused significant ball wear, indicating mixed carbide films are promising candidates for wear-resistant coatings

  4. Thermokinetic Modeling of Phase Transformation in the Laser Powder Deposition Process

    Science.gov (United States)

    Foroozmehr, Ehsan; Kovacevic, Radovan

    2009-08-01

    A finite element model coupled with a thermokinetic model is developed to predict the phase transformation of the laser deposition of AISI 4140 on a substrate with the same material. Four different deposition patterns, long-bead, short-bead, spiral-in, and spiral-out, are used to cover a similar area. Using a finite element model, the temperature history of the laser powder deposition (LPD) process is determined. The martensite transformation as well as martensite tempering is considered to calculate the final fraction of martensite, ferrite, cementite, ɛ-carbide, and retained austenite. Comparing the surface hardness topography of different patterns reveals that path planning is a critical parameter in laser surface modification. The predicted results are in a close agreement with the experimental results.

  5. Pulsed laser deposition to synthesize the bridge structure of artificial nacre: Comparison of nano- and femtosecond lasers

    Science.gov (United States)

    Melaibari, Ammar A.; Molian, Pal

    2012-11-01

    Nature offers inspiration to new adaptive technologies that allow us to build amazing shapes and structures such as nacre using synthetic materials. Consequently, we have designed a pulsed laser ablation manufacturing process involving thin film deposition and micro-machining to create hard/soft layered "brick-bridge-mortar" nacre of AlMgB14 (hard phase) with Ti (soft phase). In this paper, we report pulsed laser deposition (PLD) to mimic brick and bridge structures of natural nacre in AlMgB14. Particulate formation inherent in PLD is exploited to develop the bridge structure. Mechanical behavior analysis of the AlMgB14/Ti system revealed that the brick is to be 250 nm thick, 9 μm lateral dimensions while the bridge (particle) is to have a diameter of 500 nm for a performance equivalent to natural nacre. Both nanosecond (ns) and femtosecond (fs) pulsed lasers were employed for PLD in an iterative approach that involves varying pulse energy, pulse repetition rate, and target-to-substrate distance to achieve the desired brick and bridge characteristics. Scanning electron microscopy, x-ray photoelectron spectroscopy, and optical profilometer were used to evaluate the film thickness, particle size and density, stoichiometry, and surface roughness of thin films. Results indicated that both ns-pulsed and fs-pulsed lasers produce the desired nacre features. However, each laser may be chosen for different reasons: fs-pulsed laser is preferred for much shorter deposition time, better stoichiometry, uniform-sized particles, and uniform film thickness, while ns-pulsed laser is favored for industrial acceptance, reliability, ease of handling, and low cost.

  6. Demonstrating the utility of boron based precursor molecules for selective area deposition in a scanning tunneling microscope

    International Nuclear Information System (INIS)

    Perkins, F.K.; Onellion, M.; Lee, S.; Bowben, T.A.

    1992-01-01

    The scanning tunneling microscope (STM) can be used to selectively deposit material from a gaseous precursor compound. Ultrasmall (less than a 100 nm across) spatial dimensions for selective area deposition may be achieved by this means. In this paper the authors outline a scheme foreselecting and designing main group cluster compounds and organometallics for this type of selective area deposition using nido-decaborane(14) as an example

  7. High-speed deposition of titanium carbide coatings by laser-assisted metal–organic CVD

    Energy Technology Data Exchange (ETDEWEB)

    Gong, Yansheng [Faculty of Materials Science and Chemistry, China University of Geosciences, Wuhan 430074 (China); Tu, Rong, E-mail: turong@whut.edu.cn [State Key Laboratory of Advanced Technology for Material Synthesis and Processing, Wuhan University of Technology, Wuhan 430070 (China); Goto, Takashi [Institute for Materials Research, Tohoku University, Aoba-ku, 2-1-1 Katahira, Sendai 980-8577 (Japan)

    2013-08-01

    Graphical abstract: - Highlights: • A semiconductor laser was first used to prepare wide-area LCVD-TiC{sub x} coatings. • The effect of laser power for the deposition of TiC{sub x} coatings was discussed. • TiC{sub x} coatings showed a columnar cross section and a dense surface texture. • TiC{sub x} coatings had a 1–4 order lower laser density than those of previous reports. • This study gives the possibility of LCVD applying on the preparation of TiC{sub x} coating. - Abstract: A semiconductor laser-assisted chemical vapor deposition (LCVD) of titanium carbide (TiC{sub x}) coatings on Al{sub 2}O{sub 3} substrate using tetrakis (diethylamido) titanium (TDEAT) and C{sub 2}H{sub 2} as source materials were investigated. The influences of laser power (P{sub L}) and pre-heating temperature (T{sub pre}) on the microstructure and deposition rate of TiC{sub x} coatings were examined. Single phase of TiC{sub x} coatings were obtained at P{sub L} = 100–200 W. TiC{sub x} coatings had a cauliflower-like surface and columnar cross section. TiC{sub x} coatings in the present study had the highest R{sub dep} (54 μm/h) at a relative low T{sub dep} than those of conventional CVD-TiC{sub x} coatings. The highest volume deposition rate (V{sub dep}) of TiC{sub x} coatings was about 4.7 × 10{sup −12} m{sup 3} s{sup −1}, which had 3–10{sup 5} times larger deposition area and 1–4 order lower laser density than those of previous LCVD using CO{sub 2}, Nd:YAG and argon ion laser.

  8. Laser metal deposition of Ti6Al4V: A study on the effect of laser power on microstructure and microhardness

    CSIR Research Space (South Africa)

    Mahamood, RM

    2013-03-01

    Full Text Available The effect of laser power on the resulting microstructure and microhardness of laser metal deposited Ti6Al4V powder on Ti6Al4V substrate has been investigated. The tracks were deposited using 99.6 % pure Ti6Al4V powder of particle size ranging...

  9. Pulsed laser deposition of the lysozyme protein: an unexpected “Inverse MAPLE” process

    DEFF Research Database (Denmark)

    Schou, Jørgen; Matei, Andreea; Constantinescu, Catalin

    2012-01-01

    Films of organic materials are commonly deposited by laser assisted methods, such as MAPLE (matrix-assisted pulsed laser evaporation), where a few percent of the film material in the target is protected by a light-absorbing volatile matrix. Another possibility is to irradiate the dry organic...... the ejection and deposition of lysozyme. This can be called an “inverse MAPLE” process, since the ratio of “matrix” to film material in the target is 10:90, which is inverse of the typical MAPLE process where the film material is dissolved in the matrix down to several wt.%. Lysozyme is a well-known protein...

  10. Ultra-thin Cu2ZnSnS4 solar cell by pulsed laser deposition

    DEFF Research Database (Denmark)

    Cazzaniga, Andrea Carlo; Crovetto, Andrea; Yan, Chang

    2017-01-01

    We report on the fabrication of a 5.2% efficiency Cu2ZnSnS4 (CZTS) solar cell made by pulsed laser deposition (PLD) featuring an ultra-thin absorber layer (less than 450 nm). Solutions to the issues of reproducibility and micro-particulate ejection often encountered with PLD are proposed. At the ......We report on the fabrication of a 5.2% efficiency Cu2ZnSnS4 (CZTS) solar cell made by pulsed laser deposition (PLD) featuring an ultra-thin absorber layer (less than 450 nm). Solutions to the issues of reproducibility and micro-particulate ejection often encountered with PLD are proposed...

  11. Radio-frequency oxygen-plasma-enhanced pulsed laser deposition of IGZO films

    Directory of Open Access Journals (Sweden)

    Chia-Man Chou

    2017-07-01

    Full Text Available We demonstrate the crystalline structures, optical transmittance, surface and cross-sectional morphologies, chemical compositions, and electrical properties of indium gallium zinc oxide (IGZO-based thin films deposited on glass and silicon substrates through pulsed laser deposition (PLD incorporated with radio-frequency (r.f.-generated oxygen plasma. The plasma-enhanced pulsed laser deposition (PEPLD-based IGZO thin films exhibited a c-axis-aligned crystalline (CAAC structure, which was attributed to the increase in Zn-O under high oxygen vapor pressure (150 mTorr. High oxygen vapor pressure (150 mTorr and low r.f. power (10 W are the optimal deposition conditions for fabricating IGZO thin films with improved electrical properties.

  12. Radio-frequency oxygen-plasma-enhanced pulsed laser deposition of IGZO films

    Science.gov (United States)

    Chou, Chia-Man; Lai, Chih-Chang; Chang, Chih-Wei; Wen, Kai-Shin; Hsiao, Vincent K. S.

    2017-07-01

    We demonstrate the crystalline structures, optical transmittance, surface and cross-sectional morphologies, chemical compositions, and electrical properties of indium gallium zinc oxide (IGZO)-based thin films deposited on glass and silicon substrates through pulsed laser deposition (PLD) incorporated with radio-frequency (r.f.)-generated oxygen plasma. The plasma-enhanced pulsed laser deposition (PEPLD)-based IGZO thin films exhibited a c-axis-aligned crystalline (CAAC) structure, which was attributed to the increase in Zn-O under high oxygen vapor pressure (150 mTorr). High oxygen vapor pressure (150 mTorr) and low r.f. power (10 W) are the optimal deposition conditions for fabricating IGZO thin films with improved electrical properties.

  13. Surface-enhanced Raman spectroscopy (SERS) using Ag nanoparticle films produced by pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Smyth, C.A., E-mail: smythc2@tcd.ie [School of Physics, Trinity College Dublin, Dublin 2 (Ireland); Mirza, I.; Lunney, J.G.; McCabe, E.M. [School of Physics, Trinity College Dublin, Dublin 2 (Ireland)

    2013-01-01

    Highlights: Black-Right-Pointing-Pointer Pulsed laser deposition (PLD) produces silver nanoparticle films. Black-Right-Pointing-Pointer These films can be used for surface-enhanced Raman spectroscopy (SERS). Black-Right-Pointing-Pointer Commercial film shows good SERS reproducibility but poor signal intensity. Black-Right-Pointing-Pointer PLD shows a good SERS response coupled with good reproducibility. - Abstract: Thin silver nanoparticle films, of thickness 7 nm, were deposited onto glass microslides using pulsed laser deposition (PLD). The films were then characterised using UV-vis spectroscopy and scanning transmission electron microscopy before Rhodamine 6G was deposited onto them for investigation using surface-enhanced Raman spectroscopy (SERS). The sensitivity obtained using SERS was compared to that obtained using a colloidal silver suspension and also to a commercial SERS substrate. The reproducibility of the films is also examined using statistical analysis.

  14. Pulsed Laser Deposition of BaTiO3 Thin Films on Different Substrates

    Directory of Open Access Journals (Sweden)

    Yaodong Yang

    2010-01-01

    Full Text Available We have studied the deposition of BaTiO3 (BTO thin films on various substrates. Three representative substrates were selected from different types of material systems: (i SrTiO3 single crystals as a typical oxide, (ii Si wafers as a semiconductor, and (iii Ni foils as a magnetostrictive metal. We have compared the ferroelectric properties of BTO thin films obtained by pulsed laser deposition on these diverse substrates.

  15. Epitaxial growth of atomically flat gadolinia-doped ceria thin films by pulsed laser deposition

    DEFF Research Database (Denmark)

    Chen, Yunzhong; Pryds, Nini; Schou, Jørgen

    the preparation of ultrathin seed layers in the first stage of the deposition process is often envisaged to control the growth and physical properties of the subsequent coating. This work suggests that the limitations of conventional pulsed laser deposition (PLD), performed at moderate temperature (400°C......10 layers with a thickness of 4 nm, 13 nm and 22 nm, respectively, grown on Mg(100), were studied by atomic force microscopy and X-ray reflectometry....

  16. Pulsed laser deposition of Cu-Sn-S for thin film solar cells

    DEFF Research Database (Denmark)

    Ettlinger, Rebecca Bolt; Crovetto, Andrea; Bosco, Edoardo

    Thin films of copper tin sulfide were deposited from a target of the stoichiometry Cu:Sn:S ~1:2:3 using pulsed laser deposition (PLD). Annealing with S powder resulted in films close to the desired Cu2SnS3 stoichiometry although the films remained Sn rich. Xray diffraction showed that the final...... films contained both cubic-phase Cu2SnS3 and orthorhombic-phase SnS...

  17. Optical and mechanical properties of nanocrystalline ZrC thin films grown by pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Craciun, D., E-mail: doina.craciun@inflpr.ro [Laser Department, National Institute for Laser, Plasma, and Radiation Physics, Magurele (Romania); Socol, G. [Laser Department, National Institute for Laser, Plasma, and Radiation Physics, Magurele (Romania); Lambers, E. [Major Analytical Instrumentation Center, College of Engineering, University of Florida, Gainesville, FL 32611 (United States); McCumiskey, E.J.; Taylor, C.R. [Mechanical and Aerospace Engineering, University of Florida, Gainesville, FL 32611 (United States); Martin, C. [Ramapo College of New Jersey (United States); Argibay, N. [Materials Science and Engineering Center, Sandia National Laboratories, Albuquerque, NM 87123 (United States); Tanner, D.B. [Physics Department, University of Florida, Gainesville, FL 32611 (United States); Craciun, V. [Laser Department, National Institute for Laser, Plasma, and Radiation Physics, Magurele (Romania)

    2015-10-15

    Highlights: • Nanocrystalline ZrC thin film were grown on Si by pulsed laser deposition technique. • Structural properties weakly depend on the CH{sub 4} pressure used during deposition. • The optimum deposition pressure for low resistivity is around 2 × 10{sup −5} mbar CH{sub 4}. • ZrC films exhibited friction coefficients around 0.4 and low wear rates. - Abstract: Thin ZrC films (<500 nm) were grown on (100) Si substrates at a substrate temperature of 500 °C by the pulsed laser deposition (PLD) technique using a KrF excimer laser under different CH{sub 4} pressures. Glancing incidence X-ray diffraction showed that films were nanocrystalline, while X-ray reflectivity studies found out films were very dense and exhibited a smooth surface morphology. Optical spectroscopy data shows that the films have high reflectivity (>90%) in the infrared region, characteristic of metallic behavior. Nanoindentation results indicated that films deposited under lower CH{sub 4} pressures exhibited slightly higher nanohardness and Young modulus values than films deposited under higher pressures. Tribological characterization revealed that these films exhibited relatively high wear resistance and steady-state friction coefficients on the order of μ = 0.4.

  18. Excimer laser recrystallization of nanocrystalline-Si films deposited by inductively coupled plasma chemical vapour deposition at 150 deg. C

    International Nuclear Information System (INIS)

    Park, Joong-Hyun; Han, Sang-Myeon; Park, Sang-Geun; Han, Min-Koo; Shin, Moon-Young

    2006-01-01

    Polycrystalline silicon thin film transistors (poly-Si TFTs) fabricated at low temperature (under 200 deg. C) have been widely investigated for flexible substrate applications such as a transparent plastic substrate. Unlike the conventional TFT process using glass substrate, the maximum process temperature should be kept less than 200 deg. C in order to avoid thermal damage on flexible substrates. We report the characteristics of nanocrystalline silicon (nc-Si) irradiated by an excimer laser. Nc-Si precursors were deposited on various buffer layers by inductively coupled plasma chemical vapour deposition (ICP-CVD) at 150 deg. C. We employed various buffer layers, such as silicon nitride (SiN X ) and silicon dioxide (SiO 2 ), in order to report recrystallization characteristics in connection with a buffer layer of a different thermal conductivity. The dehydrogenation and recrystallization was performed by step-by-step excimer laser annealing (ELA) (XeCl,λ=308 nm) in order to prevent the explosive release of hydrogen atoms. The grain size of the poly-Si film, which was recrystallized on the various buffer layers, was measured by scanning electron microscopy (SEM) at each laser energy density. The process margin of step-by-step ELA employing the SiN X buffer layer is wider than SiO 2 and the maximum grain size slightly increased

  19. Pulsed laser deposition of AlMgB14 thin films

    Energy Technology Data Exchange (ETDEWEB)

    Britson, Jason Curtis [Iowa State Univ., Ames, IA (United States)

    2008-11-18

    Hard, wear-resistant coatings of thin film borides based on AlMgB14 have the potential to be applied industrially to improve the tool life of cutting tools and pump vanes and may account for several million dollars in savings as a result of reduced wear on these parts. Past work with this material has shown that it can have a hardness of up to 45GPa and be fabricated into thin films with a similar hardness using pulsed laser deposition. These films have already been shown to be promising for industrial applications. Cutting tools coated with AlMgB14 used to mill titanium alloys have been shown to substantially reduce the wear on the cutting tool and extend its cutting life. However, little research into the thin film fabrication process using pulsed laser deposition to make AlMgB14 has been conducted. In this work, research was conducted into methods to optimize the deposition parameters for the AlMgB14 films. Processing methods to eliminate large particles on the surface of the AlMgB14 films, produce films that were at least 1m thick, reduce the surface roughness of the films, and improve the adhesion of the thin films were investigated. Use of a femtosecond laser source rather than a nanosecond laser source was found to be effective in eliminating large particles considered detrimental to wear reduction properties from the films. Films produced with the femtosecond laser were also found to be deposited at a rate 100 times faster than those produced with the nanosecond laser. However, films produced with the femtosecond laser developed a relatively high RMS surface roughness around 55nm. Attempts to decrease the surface roughness were largely unsuccessful. Neither increasing the surface temperature of the substrate during deposition nor using a double pulse to ablate the material was found to be extremely successful to reduce the surface roughness. Finally, the adhesion of the thin films to M2 tool steel

  20. Electrochemically deposited Cu{sub 2}O cubic particles on boron doped diamond substrate as efficient photocathode for solar hydrogen generation

    Energy Technology Data Exchange (ETDEWEB)

    Mavrokefalos, Christos K. [Department of Chemistry, Chemistry Research Laboratory, University of Oxford, Mansfield Road, Oxford, OX1 3TA, England (United Kingdom); Hasan, Maksudul, E-mail: maksudul.hasan@chem.ox.ac.uk [Department of Chemistry, Chemistry Research Laboratory, University of Oxford, Mansfield Road, Oxford, OX1 3TA, England (United Kingdom); Tyndall National Institute, University College Cork, Lee Maltings, Cork (Ireland); Rohan, James F. [Tyndall National Institute, University College Cork, Lee Maltings, Cork (Ireland); Compton, Richard G. [Department of Chemistry, Physical and Theoretical Chemistry Laboratory, University of Oxford, South Parks Road, Oxford, OX1 3QZ, England (United Kingdom); Foord, John S., E-mail: john.foord@chem.ox.ac.uk [Department of Chemistry, Chemistry Research Laboratory, University of Oxford, Mansfield Road, Oxford, OX1 3TA, England (United Kingdom)

    2017-06-30

    Highlights: • Fabrication of low-cost photocathode by electrochemical method is described. • Boron-doped diamond is presented as catalyst support. • NiO nanoparticles on Cu{sub 2}O surface enhances photocurrent and electrode stability. • Synergy of metallic interaction between Cu and Ni leads to high efficiency. - Abstract: Herein, we report a novel photocathode for the water splitting reaction. The electrochemical deposition of Cu{sub 2}O particles on boron doped diamond (BDD) electrodes and the subsequent decoration with NiO nanoparticles by a dip coating method to act as co-catalyst for hydrogen evolution reaction is described. The morphology analysis by scanning electron microscope (SEM) revealed that Cu{sub 2}O particles are cubic and decorated sporadically with NiO nanoparticles. X-ray photoelectron spectroscopy (XPS) confirmed the electronic interaction at the interface between Cu{sub 2}O and NiO through a binding energy shift of the main Cu 2p peak. The photoelectrochemical (PEC) performance of NiO-Cu{sub 2}O/BDD showed a much higher current density (−0.33 mA/cm{sup 2}) and photoconversion efficiency (0.28%) compared to the unmodified Cu{sub 2}O/BDD electrode, which are only −0.12 mA/cm{sup 2} and 0.06%, respectively. The enhancement in PEC performance is attributable to the synergy of NiO as an electron conduction mediator leading to the enhanced charge separation and transfer to the reaction interface for hydrogen evolution as evidenced by electrochemical impedance spectroscopy (EIS) and charge carrier density calculation. Stability tests showed that the NiO nanoparticles loading content on Cu{sub 2}O surface is a crucial parameter in this regard.

  1. Negative permittivity of ZnO thin films prepared from aluminum and gallium doped ceramics via pulsed-laser deposition

    DEFF Research Database (Denmark)

    Bodea, M. A.; Sbarcea, G.; Naik, G. V.

    2013-01-01

    Aluminum and gallium doped zinc oxide thin films with negative dielectric permittivity in the near infrared spectral range are grown by pulsed laser deposition. Composite ceramics comprising ZnO and secondary phase Al2O3 or Ga2O3 are employed as targets for laser ablation. Films deposited on glass...

  2. Effect of Laser Power on Material Efficiency, Layer Height and Width of Laser Metal Deposited Ti6Al4V

    CSIR Research Space (South Africa)

    Mahamood, RM

    2012-10-01

    Full Text Available /sec) during deposition is   600  DFRP TPm ----------------------------------- (3) PFR is the powder flow rate in g/min and the 60 in equation 3 is a conversion factor for the powder flow rate to g/sec. The powder efficiency (μ) is given by:   100/ 0... Alloys for Aerospace Applications, in: Titanium and Titanium Alloys, Advanced Engineering Materials, 5, 2003, pp.419-427. [3] Y. Lu, H.B. Tang, Y.L. Fang, D. Liu, H.M. Wang, Microstructure evolution of sub-critical annealed laser deposited Ti–6Al–4V...

  3. Laser Photolysis and Thermolysis of Organic Selenides and Tellurides for Chemical Gas-phase Deposition of Nanostructured Materials

    Directory of Open Access Journals (Sweden)

    Josef Pola

    2009-03-01

    Full Text Available Laser radiation-induced decomposition of gaseous organic selenides and tellurides resulting in chemical deposition of nanostructured materials on cold surfaces is reviewed with regard to the mechanism of the gas-phase decomposition and properties of the deposited materials. The laser photolysis and laser thermolysis of the Se and Te precursors leading to chalcogen deposition can also serve as a useful approach to nanostructured chalcogen composites and IVA group (Si, Ge, Sn element chalcogenides provided that it is carried out simultaneously with laser photolysis or thermolysis of polymer and IVA group element precursor.

  4. Surface modification of biomaterials by pulsed laser ablation deposition and plasma/gamma polymerization

    Science.gov (United States)

    Rau, Kaustubh R.

    Surface modification of stainless-steel was carried out by two different methods: pulsed laser ablation deposition (PLAD) and a combined plasma/gamma process. A potential application was the surface modification of endovascular stents, to enhance biocompatibility. The pulsed laser ablation deposition process, had not been previously reported for modifying stents and represented a unique and potentially important method for surface modification of biomaterials. Polydimethylsiloxane (PDMS) elatomer was studied using the PLAD technique. Cross- linked PDMS was deemed important because of its general use for biomedical implants and devices as well as in other fields. Furthermore, PDMS deposition using PLAD had not been previously studied and any information gained on its ablation characteristics could be important scientifically and technologically. The studies reported here showed that the deposited silicone film properties had a dependence on the laser energy density incident on the target. Smooth, hydrophobic, silicone-like films were deposited at low energy densities (100-150 mJ/cm2). At high energy densities (>200 mJ/cm2), the films had an higher oxygen content than PDMS, were hydrophilic and tended to show a more particulate morphology. It was also determined that (1)the deposited films were stable and extremely adherent to the substrate, (2)silicone deposition exhibited an `incubation effect' which led to the film properties changing with laser pulse number and (3)films deposited under high vacuum were similar to films deposited at low vacuum levels. The mechanical properties of the PLAD films were determined by nanomechanical measurements which are based on the Atomic Force Microscope (AFM). From these measurements, it was possible to determine the modulus of the films and also study their scratch resistance. Such measurement techniques represent a significant advance over current state-of-the-art thin film characterization methods. An empirical model for

  5. Laser aided direct metal deposition of Inconel 625 superalloy: Microstructural evolution and thermal stability

    International Nuclear Information System (INIS)

    Dinda, G.P.; Dasgupta, A.K.; Mazumder, J.

    2009-01-01

    Direct metal deposition technology is an emerging laser aided manufacturing technology based on a new additive manufacturing principle, which combines laser cladding with rapid prototyping into a solid freeform fabrication process that can be used to manufacture near net shape components from their CAD files. In the present study, direct metal deposition technology was successfully used to fabricate a series of samples of the Ni-based superalloy Inconel 625. A high power CO 2 laser was used to create a molten pool on the Inconel 625 substrate into which an Inconel 625 powder stream was delivered to create a 3D object. The structure and properties of the deposits were investigated using optical and scanning electron microscopy, X-ray diffraction and microhardness test. The microstructure has been found to be columnar dendritic in nature, which grew epitaxially from the substrate. The thermal stability of the dendritic morphology was investigated in the temperature range 800-1200 deg. C. These studies demonstrate that Inconel 625 is an attractive material for laser deposition as all samples produced in this study are free from relevant defects such as cracks, bonding error and porosity.

  6. CdS thin films prepared by laser assisted chemical bath deposition

    International Nuclear Information System (INIS)

    Garcia, L.V.; Mendivil, M.I.; Garcia Guillen, G.; Aguilar Martinez, J.A.; Krishnan, B.; Avellaneda, D.; Castillo, G.A.; Das Roy, T.K.; Shaji, S.

    2015-01-01

    Highlights: • CdS thin films by conventional CBD and laser assisted CBD. • Characterized these films using XRD, XPS, AFM, optical and electrical measurements. • Accelerated growth was observed in the laser assisted CBD process. • Improved dark conductivity and good photocurrent response for the LACBD CdS. - Abstract: In this work, we report the preparation and characterization of CdS thin films by laser assisted chemical bath deposition (LACBD). CdS thin films were prepared from a chemical bath containing cadmium chloride, triethanolamine, ammonium hydroxide and thiourea under various deposition conditions. The thin films were deposited by in situ irradiation of the bath using a continuous laser of wavelength 532 nm, varying the power density. The thin films obtained during deposition of 10, 20 and 30 min were analyzed. The changes in morphology, structure, composition, optical and electrical properties of the CdS thin films due to in situ irradiation of the bath were analyzed by atomic force microscopy (AFM), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and UV–vis spectroscopy. The thin films obtained by LACBD were nanocrystalline, photoconductive and presented interesting morphologies. The results showed that LACBD is an effective synthesis technique to obtain nanocrystalline CdS thin films having good optoelectronic properties

  7. Laser aided direct metal deposition of Inconel 625 superalloy: Microstructural evolution and thermal stability

    Energy Technology Data Exchange (ETDEWEB)

    Dinda, G.P., E-mail: dindag@focushope.edu [Center for Advanced Technologies, Focus: HOPE, Detroit, MI 48238 (United States); Center for Laser Aided Intelligent Manufacturing, University of Michigan, Ann Arbor, MI 48109 (United States); Dasgupta, A.K. [Center for Advanced Technologies, Focus: HOPE, Detroit, MI 48238 (United States); Mazumder, J. [Center for Laser Aided Intelligent Manufacturing, University of Michigan, Ann Arbor, MI 48109 (United States)

    2009-05-25

    Direct metal deposition technology is an emerging laser aided manufacturing technology based on a new additive manufacturing principle, which combines laser cladding with rapid prototyping into a solid freeform fabrication process that can be used to manufacture near net shape components from their CAD files. In the present study, direct metal deposition technology was successfully used to fabricate a series of samples of the Ni-based superalloy Inconel 625. A high power CO{sub 2} laser was used to create a molten pool on the Inconel 625 substrate into which an Inconel 625 powder stream was delivered to create a 3D object. The structure and properties of the deposits were investigated using optical and scanning electron microscopy, X-ray diffraction and microhardness test. The microstructure has been found to be columnar dendritic in nature, which grew epitaxially from the substrate. The thermal stability of the dendritic morphology was investigated in the temperature range 800-1200 deg. C. These studies demonstrate that Inconel 625 is an attractive material for laser deposition as all samples produced in this study are free from relevant defects such as cracks, bonding error and porosity.

  8. Field emission study of pulsed laser deposition of gold on clean and oxidized tungsten tip

    Czech Academy of Sciences Publication Activity Database

    Plšek, Jan

    2014-01-01

    Roč. 292, FEB 2014 (2014), s. 717-725 ISSN 0169-4332 R&D Projects: GA MŠk LH13022 Institutional support: RVO:61388955 Keywords : nanoparticles * nucleation and growth * pulsed laser deposition Subject RIV: CF - Physical ; Theoretical Chemistry Impact factor: 2.711, year: 2014

  9. Deposition of zinc oxide thin films by reactive pulsed laser ablation

    Czech Academy of Sciences Publication Activity Database

    Bílková, Petra; Zemek, Josef; Mitu, B.; Marotta, V.; Orlando, S.

    2006-01-01

    Roč. 252, - (2006), s. 4604-4609 ISSN 0169-4332 Grant - others:NATO-CNR Outreach Fellowships Programm 2001(XE) 219.34 Institutional research plan: CEZ:AV0Z10100521 Keywords : reactive pulsed laser deposition * zinc oxide * thin films Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.436, year: 2006

  10. CdS thin films prepared by laser assisted chemical bath deposition

    Energy Technology Data Exchange (ETDEWEB)

    Garcia, L.V.; Mendivil, M.I.; Garcia Guillen, G.; Aguilar Martinez, J.A. [Facultad de Ingenieria Mecanica y Electrica, Universidad Autonoma de Nuevo Leon, Av. Pedro de Alba s/n, Ciudad Universitaria, San Nicolas de los Garza, Nuevo Leon 66450 (Mexico); Krishnan, B. [Facultad de Ingenieria Mecanica y Electrica, Universidad Autonoma de Nuevo Leon, Av. Pedro de Alba s/n, Ciudad Universitaria, San Nicolas de los Garza, Nuevo Leon 66450 (Mexico); CIIDIT – Universidad Autonoma de Nuevo Leon, Apodaca, Nuevo Leon (Mexico); Avellaneda, D.; Castillo, G.A.; Das Roy, T.K. [Facultad de Ingenieria Mecanica y Electrica, Universidad Autonoma de Nuevo Leon, Av. Pedro de Alba s/n, Ciudad Universitaria, San Nicolas de los Garza, Nuevo Leon 66450 (Mexico); Shaji, S., E-mail: sshajis@yahoo.com [Facultad de Ingenieria Mecanica y Electrica, Universidad Autonoma de Nuevo Leon, Av. Pedro de Alba s/n, Ciudad Universitaria, San Nicolas de los Garza, Nuevo Leon 66450 (Mexico); CIIDIT – Universidad Autonoma de Nuevo Leon, Apodaca, Nuevo Leon (Mexico)

    2015-05-01

    Highlights: • CdS thin films by conventional CBD and laser assisted CBD. • Characterized these films using XRD, XPS, AFM, optical and electrical measurements. • Accelerated growth was observed in the laser assisted CBD process. • Improved dark conductivity and good photocurrent response for the LACBD CdS. - Abstract: In this work, we report the preparation and characterization of CdS thin films by laser assisted chemical bath deposition (LACBD). CdS thin films were prepared from a chemical bath containing cadmium chloride, triethanolamine, ammonium hydroxide and thiourea under various deposition conditions. The thin films were deposited by in situ irradiation of the bath using a continuous laser of wavelength 532 nm, varying the power density. The thin films obtained during deposition of 10, 20 and 30 min were analyzed. The changes in morphology, structure, composition, optical and electrical properties of the CdS thin films due to in situ irradiation of the bath were analyzed by atomic force microscopy (AFM), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and UV–vis spectroscopy. The thin films obtained by LACBD were nanocrystalline, photoconductive and presented interesting morphologies. The results showed that LACBD is an effective synthesis technique to obtain nanocrystalline CdS thin films having good optoelectronic properties.

  11. Pulsed laser deposited KY3F10: Ho3+ thin films: Influence of target to substrate

    CSIR Research Space (South Africa)

    Debelo, NG

    2017-04-01

    Full Text Available The influence of target to substrate distance (dts) on the structural, morphological and photoluminescence (PL) properties of commercially obtained KY3F10 : Ho3+ phosphor thin films prepared by pulsed laser deposition is investigated for dts values...

  12. Highly Sensitive TGA Diagnosis of Thermal Behaviour of Laser-Deposited Materials

    Czech Academy of Sciences Publication Activity Database

    Galíková, Anna; Pola, Josef

    2008-01-01

    Roč. 473, 1-2 (2008), s. 54-60 ISSN 0040-6031 R&D Projects: GA AV ČR IAA400720619 Institutional research plan: CEZ:AV0Z40720504 Keywords : thermogravimetry * laser-deposited materials * mass spectroscopy Subject RIV: CF - Physical ; Theoretical Chemistry Impact factor: 1.659, year: 2008

  13. THE FORMATION OF BIMETALLIC CONNECTION IN WELDER DEPOSITION UNDER LASER WELDING WITH THE FILLER WIRE FEED

    Directory of Open Access Journals (Sweden)

    A. P. Yelistratov

    2017-01-01

    Full Text Available The metallurgical and technological features of welding deposition in a robotic unit with a semiconductor laser are analyzed. The prospects of using beam with low energy density in the spot heating for applying metallic layers using filler wire are shown. 

  14. Effect of scanning speed on laser deposited 17-4PH stainless steel

    CSIR Research Space (South Africa)

    Bayode, A

    2017-02-01

    Full Text Available Laser metal deposition (LMD) is one of the additive manufacturing technologies that is used in the production of fully dense parts layer by layer. This innovative manufacturing process has the potential to reduce the weight, time and cost...

  15. Microstructure and microhardness of 17-4 PH stainless steel made by laser metal deposition

    CSIR Research Space (South Africa)

    Bayode, A

    2016-10-01

    Full Text Available variety of metallic powders. This paper investigates the evolving properties of laser deposited 17-4PH stainless steel. The microstructure was martensitic with a dendritic structure. The average microhardness of the samples was found to be less than...

  16. Sorbitol as an efficient reducing agent for laser-induced copper deposition

    Science.gov (United States)

    Kochemirovsky, V. A.; Logunov, L. S.; Safonov, S. V.; Tumkin, I. I.; Tver'yanovich, Yu. S.; Menchikov, L. G.

    2012-10-01

    We have pioneered in revealing the fact that sorbitol may be used as an efficient reducing agent in the process of laser-induced copper deposition from solutions; in this case, it is possible to obtain copper lines much higher quality than by using conventional formalin.

  17. The minimum amount of "matrix " needed for matrix-assisted pulsed laser deposition of biomolecules

    DEFF Research Database (Denmark)

    Tabetah, Marshall; Matei, Andreea; Constantinescu, Catalin

    2014-01-01

    The ability of matrix-assisted pulsed laser evaporation (MAPLE) technique to transfer and deposit high-quality thin organic, bioorganic, and composite films with minimum chemical modification of the target material has been utilized in numerous applications. One of the outstanding problems in MAPLE...

  18. Optical Emission Spectroscopy of Plasma in Hybrid Pulsed Laser Deposition System

    Czech Academy of Sciences Publication Activity Database

    Novotný, Michal; Jelínek, Miroslav; Bulíř, Jiří; Lančok, Ján; Jastrabík, Lubomír; Zelinger, Zdeněk

    2002-01-01

    Roč. 52, Suppl. D (2002), s. 292-298 ISSN 0011-4626 R&D Projects: GA AV ČR IAA1010110 Keywords : optical emission spectroscopy * pulsed laser deposition * RF discharge Subject RIV: CF - Physical ; Theoretical Chemistry Impact factor: 0.311, year: 2002

  19. Dental implants coated with laser deposited hydroxyapatite films - physical properties and in-vivo study

    Czech Academy of Sciences Publication Activity Database

    Jelínek, Miroslav; Dostálová, T.; Himmlová, L.; Grivas, Ch.; Fotakis, C.

    2002-01-01

    Roč. 374, - (2002), s. 599-604 ISSN 1058-725X Institutional research plan: CEZ:AV0Z1010914 Keywords : laser deposition * thin films * implants * hydroxyapatite * in-vivo tests Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 0.457, year: 2002

  20. Optical properties of zinc phthalocyanine thin films prepared by pulsed laser deposition

    Czech Academy of Sciences Publication Activity Database

    Novotný, Michal; Bulíř, Jiří; Bensalah-Ledoux, A.; Guy, S.; Fitl, P.; Vrňata, M.; Lančok, Ján; Moine, B.

    2014-01-01

    Roč. 117, č. 1 (2014), 377-381 ISSN 0947-8396 R&D Projects: GA ČR(CZ) GAP108/11/1298 Grant - others:AVČR(CZ) M100101271 Institutional support: RVO:68378271 Keywords : optical properties * zinc phthalocyanine * laser deposition Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.704, year: 2014

  1. Electron Microscopy Characterization of Ni-Cr-B-Si-C Laser Deposited Coatings

    NARCIS (Netherlands)

    Hemmati, I.; Rao, J. C.; Ocelik, V.; De Hosson, J. Th. M.

    During laser deposition of Ni-Cr-B-Si-C alloys with high amounts of Cr and B, various microstructures and phases can be generated from the same chemical composition that results in heterogeneous properties in the clad layer. In this study, the microstructure and phase constitution of a high-alloy

  2. Microstructural evolution in additive manufacturing with high power lasers : Deposition, characterization and performance

    NARCIS (Netherlands)

    Nenadl, Ondrej

    2017-01-01

    High power lasers provide time and cost effective method for metallic surface modification. In this work these modifications are explored as: 1) a simple melting and subsequent rapid solidification of a metallic surface – resulting in superior properties post-treatment; 2) deposition of an

  3. State of residual stress in laser-deposited ceramic composite coatings on aluminum alloys

    NARCIS (Netherlands)

    Kadolkar, P. B.; Watkins, T. R.; De Hosson, J. Th. M.; Kooi, B. J.; Dahotre, N. B.

    The nature and magnitude of the residual stresses within laser-deposited titanium carbide (TiC) coatings on 2024 and 6061 aluminum (Al) alloys were investigated. Macro- and micro-stresses within the coatings were determined using an X-ray diffraction method. Owing to increased debonding between the

  4. Structural and magnetic properties of Gd/Fe multilayers grown by pulsed laser deposition

    DEFF Research Database (Denmark)

    Kant, K. Mohan; Bahl, Christian Robert Haffenden; Pryds, Nini

    2010-01-01

    This work investigates the structural and the magnetic properties of Gd/Fe multilayered thin films grown by pulsed laser deposition onto Si (001) substrates at room temperature. he Fe layer thickness is varied from 70 to 150 nm and its effect on the structural and magnetic properties of Fe/Gd/Fe ...

  5. ArF Laser -Induced Chemical Vapour Deposition of Polythiene Films from Carbon Disulfide

    Czech Academy of Sciences Publication Activity Database

    Tomovska, R.; Bastl, Zdeněk; Vorlíček, Vladimír; Vacek, Karel; Šubrt, Jan; Plzák, Zbyněk; Pola, Josef

    2003-01-01

    Roč. 107, č. 36 (2003), s. 9793-9801 ISSN 1089-5647 R&D Projects: GA MŠk ME 612 Institutional research plan: CEZ:AV0Z4032918; CEZ:AV0Z4040901 Keywords : laser photolysis * ArF * chemical vapour deposition Subject RIV: CF - Physical ; Theoretical Chemistry Impact factor: 3.679, year: 2003

  6. An analytical–numerical model of laser direct metal deposition track and microstructure formation

    International Nuclear Information System (INIS)

    Ahsan, M Naveed; Pinkerton, Andrew J

    2011-01-01

    Multiple analytical and numerical models of the laser metal deposition process have been presented, but most rely on sequential solution of the energy and mass balance equations or discretization of the problem domain. Laser direct metal deposition is a complex process involving multiple interdependent processes which can be best simulated using a fully coupled mass-energy balance solution. In this work a coupled analytical–numerical solution is presented. Sub-models of the powder stream, quasi-stationary conduction in the substrate and powder assimilation into the area of the substrate above the liquidus temperature are combined. An iterative feedback loop is used to ensure mass and energy balances are maintained at the melt pool. The model is verified using Ti–6Al–4V single track deposition, produced with a coaxial nozzle and a diode laser. The model predictions of local temperature history, the track profile and microstructure scale show good agreement with the experimental results. The model is a useful industrial aid and alternative to finite element methods for selecting the parameters to use for laser direct metal deposition when separate geometric and microstructural outcomes are required

  7. High Quality Zinc Oxide Thin films and Nanostructures Prepared by Pulsed Laser Deposition for Photodetectors

    KAUST Repository

    Flemban, Tahani H.

    2017-01-01

    is attributed to defect/impurity bands mediated by Gd dopants. In this dissertation, I study the effects of Gd concentration, oxygen pressure using pulsed laser deposition (PLD), and thermal annealing on the optical and structural properties of undoped and Gd

  8. In situ monitoring of electrical resistance during deposition of Ag and Al thin films by pulsed laser deposition: comparative study

    Czech Academy of Sciences Publication Activity Database

    Abdellaoui, N.; Pereira, A.; Novotný, Michal; Bulíř, Jiří; Fitl, Přemysl; Lančok, Ján; Moine, B.; Pillonnet, A.

    2017-01-01

    Roč. 418, Oct (2017), s. 517-521 ISSN 0169-4332 R&D Projects: GA MŠk LO1409; GA ČR GA16-22092S; GA ČR(CZ) GA14-10279S; GA MŠk LM2015088; GA MŠk(CZ) 7AMB14FR010 Institutional support: RVO:68378271 Keywords : pulsed laser deposition * metallic thin film * in-situ resistance measurement * silver * aluminium Subject RIV: BM - Solid Matter Physics ; Magnetism OBOR OECD: Condensed matter physics (including formerly solid state physics, supercond.) Impact factor: 3.387, year: 2016

  9. Fabrication of 100 A class, 1 m long coated conductor tapes by metal organic chemical vapor deposition and pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Selvamanickam, V.; Lee, H.G.; Li, Y.; Xiong, X.; Qiao, Y.; Reeves, J.; Xie, Y.; Knoll, A.; Lenseth, K

    2003-10-15

    SuperPower has been scaling up YBa{sub 2}Cu{sub 3}O{sub x}-based second-generation superconducting tapes by techniques such as pulsed laser deposition (PLD) using industrial laser and metal organic chemical vapor deposition (MOCVD). Both techniques offer advantage of high deposition rates, which is important for high throughput. Using highly-polished substrates produced in a reel-to-reel polishing facility and buffer layers deposited in a pilot ion beam assisted deposition facility, meter-long second-generation high temperature superconductor tapes have been produced. 100 A class, meter-long coated conductor tapes have been reproducibly demonstrated in this work by both MOCVD and PLD. The best results to date are 148 A over 1.06 m by MOCVD and 135 A over 1.1 m by PLD using industrial laser.

  10. Pulsed-laser deposition of smooth thin films of Er, Pr and Nd doped glasses

    Energy Technology Data Exchange (ETDEWEB)

    Epurescu, G. [National Institute for Laser, Plasma and Radiation Physics, Atomistilor 409, P.O. Box MG 16, RO- 77125, Bucharest-Magurele (Romania)], E-mail: george@nipne.ro; Vlad, A. [National Institute for Laser, Plasma and Radiation Physics, Atomistilor 409, P.O. Box MG 16, RO- 77125, Bucharest-Magurele (Romania); Institut fuer Angewandte Physik, Johannes-Kepler-Universitaet Linz, A-4040 Linz (Austria); Bodea, M.A. [Institut fuer Angewandte Physik, Johannes-Kepler-Universitaet Linz, A-4040 Linz (Austria); Vasiliu, C. [National Institute for Optoelectronics INOE 2000, Atomistilor 1, P.O. Box MG 05, 077125 Bucharest-Magurele (Romania); Dumitrescu, O. [University Politehnica of Bucharest, Faculty of Industrial Chemistry, Science and Engineering of Oxide Materials Department, Polizu Str. 1, sect. 1, Bucharest (Romania); Niciu, H. [National Institute of Glass, Department for Laser Glass Technology, 47 Th. Pallady Str., Sect.3, Bucharest (Romania); Elisa, M. [National Institute for Optoelectronics INOE 2000, Atomistilor 1, P.O. Box MG 05, 077125 Bucharest-Magurele (Romania); Siraj, K.; Pedarnig, J.D.; Baeuerle, D. [Institut fuer Angewandte Physik, Johannes-Kepler-Universitaet Linz, A-4040 Linz (Austria); Filipescu, M.; Nedelcea, A. [National Institute for Laser, Plasma and Radiation Physics, Atomistilor 409, P.O. Box MG 16, RO- 77125, Bucharest-Magurele (Romania); Galca, A.C. [National Institute of Materials Physics, Atomistilor 105bis, P.O. Box MG 07, RO- 77125, Magurele (Romania); Grigorescu, C.E.A. [National Institute for Optoelectronics INOE 2000, Atomistilor 1, P.O. Box MG 05, 077125 Bucharest-Magurele (Romania); Dinescu, M. [National Institute for Laser, Plasma and Radiation Physics, Atomistilor 409, P.O. Box MG 16, RO- 77125, Bucharest-Magurele (Romania)

    2009-03-01

    Thin films of complex oxides have been obtained by pulsed-laser deposition (PLD) from glass targets belonging to the system Li{sub 2}O-Al{sub 2}O{sub 3}-P{sub 2}O{sub 5}-(RE){sub 2}O{sub 3}, with RE = Nd, Pr, Er. The films were deposited on quartz, silicon and ITO/glass substrates using a F{sub 2} laser ({lambda} = 157 nm, {iota} {approx} 20 ns) for ablation in vacuum. The structural, morphological and optical properties of the oxide films were investigated through IR and UV-VIS spectroscopy, Atomic Force Microscopy (AFM), Scanning Electron Microscopy, Energy Dispersive X-ray Spectroscopy (SEM-EDX) and Spectroscopic Ellipsometry. The laser wavelength was found to be the key parameter to obtain thin films with very smooth surface. In this way new possibilities are opened to grow multilayer structures for photonic applications.

  11. Structural and optical properties of pulse laser deposited Ag2O thin films

    Science.gov (United States)

    Agasti, Souvik; Dewasi, Avijit; Mitra, Anirban

    2018-05-01

    We deposited Ag2O films in PLD system on glass substrate for a fixed partial oxygen gas pressure (70 mili Torr) and, with a variation of laser energy from 75 to 215 mJ/Pulse. The XRD patterns confirm that the films have well crystallinity and deposited as hexagonal lattice. The FESEM images show that the particle size of the films increased from 34.84 nm to 65.83 nm. The composition of the films is analyzed from EDX spectra which show that the percentage of oxygen increased by the increment of laser energy. From the optical characterization, it is observed that the optical band gap appears in the visible optical range in an increasing order from 0.87 to 0.98 eV with the increment of laser energy.

  12. Pulsed Laser Deposition of Polymers Doped with Fluorescent Probes. Application to Environmental Sensors

    International Nuclear Information System (INIS)

    Rebollar, E; Villavieja, Mm; Gaspard, S; Oujja, M; Corrales, T; Georgiou, S; Domingo, C; Bosch, P; Castillejo, M

    2007-01-01

    Pulsed laser deposition (PLD) has been used to obtain thin films of poly(methyl methacrylate) and polystyrene doped with fluorescent probes, amino aromatic compounds S5 and S6, that could be used to sense the presence of contaminating environmental agents. These dopants both in solution and inserted in polymeric films are sensitive to changes in pH, viscosity and polarity, increasing their fluorescence emission and/or modifying the position of their emission band. Films deposits on quartz substrates, obtained by irradiating targets with a Ti:Sapphire laser (800 nm, 120 fs pulse) were analyzed by optical and Environmental Scanning Electron Microscopy, Fluorescence Microscopy, Laser-Induced Fluorescence, Micro Raman Spectroscopy and Flow Injection Analysis-Mass Spectrometry. The transfer of the polymer and the probe to the substrate is observed to be strongly dependent on the optical absorption coefficient of the polymeric component of the target at the irradiation wavelength

  13. Investigation of droplet formation in pulsed Nd:YAG laser deposition of metals and silicon

    Energy Technology Data Exchange (ETDEWEB)

    Siew, Wee-Ong; Lee, Wai-Keat; Wong, Hin-Yong; Tou, Teck-Yong [Multimedia University, Faculty of Engineering, Cyberjaya, Selangor (Malaysia); Yong, Thian-Khok [Multimedia University, Faculty of Engineering, Cyberjaya, Selangor (Malaysia); Universiti Tunku Abdul Rahman, Faculty of Engineering and Science, Kuala Lumpur (Malaysia); Yap, Seong-Shan [Multimedia University, Faculty of Engineering, Cyberjaya, Selangor (Malaysia); Norwegian University of Science and Technology, Institute of Physics, Trondheim (Norway)

    2010-12-15

    In the process of pulsed laser deposition of nickel (Ni) and ruthenium (Ru) thin films, the occurrence of phase explosion in ablation was found to affect the deposition rate and enhance the optical emissions from the plasma plume. Faster thin-film growth rates coincide with the onset of phase explosion as a result of superheating and/or sub-surface boiling which also increased the particulates found on the thin-film surface. These particulates were predominantly droplets which may not be round but flattened and also debris for the case of silicon (Si) ablation. The droplets from Ni and Ru thin films were compared in terms of size distribution and number density for different laser fluences. The origins of these particulates were correlated to the bubble and ripple formations on the targets while the transfer to the thin film surface was attributed to the laser-induced ejection from the targets. (orig.)

  14. Investigation of droplet formation in pulsed Nd:YAG laser deposition of metals and silicon

    International Nuclear Information System (INIS)

    Siew, Wee-Ong; Lee, Wai-Keat; Wong, Hin-Yong; Tou, Teck-Yong; Yong, Thian-Khok; Yap, Seong-Shan

    2010-01-01

    In the process of pulsed laser deposition of nickel (Ni) and ruthenium (Ru) thin films, the occurrence of phase explosion in ablation was found to affect the deposition rate and enhance the optical emissions from the plasma plume. Faster thin-film growth rates coincide with the onset of phase explosion as a result of superheating and/or sub-surface boiling which also increased the particulates found on the thin-film surface. These particulates were predominantly droplets which may not be round but flattened and also debris for the case of silicon (Si) ablation. The droplets from Ni and Ru thin films were compared in terms of size distribution and number density for different laser fluences. The origins of these particulates were correlated to the bubble and ripple formations on the targets while the transfer to the thin film surface was attributed to the laser-induced ejection from the targets. (orig.)

  15. Dimensional and material characteristics of direct deposited tool steel by CO II laser

    Science.gov (United States)

    Choi, J.

    2006-01-01

    Laser aided direct metalimaterial deposition (DMD) process builds metallic parts layer-by-layer directly from the CAD representation. In general, the process uses powdered metaUmaterials fed into a melt pool, creating fully dense parts. Success of this technology in the die and tool industry depends on the parts quality to be achieved. To obtain designed geometric dimensions and material properties, delicate control of the parameters such as laser power, spot diameter, traverse speed and powder mass flow rate is critical. In this paper, the dimensional and material characteristics of directed deposited H13 tool steel by CO II laser are investigated for the DMD process with a feedback height control system. The relationships between DMD process variables and the product characteristics are analyzed using statistical techniques. The performance of the DMD process is examined with the material characteristics of hardness, porosity, microstructure, and composition.

  16. Growth parameter enhancement for MoS{sub 2} thin films synthesized by pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Serna, Martha I.; Higgins, Marissa; Quevedo-Lopez, Manuel A. [Materials Science and Engineering Department, The University of Texas at Dallas, 800 W Campbell Road RL 10, Richardson TX 75080 (United States); Moreno, Salvador [Department of Mechanical Engineering, The University of Texas at Dallas, Richardson, TX 75080 (United States); Choi, Hyunjoo [Department of Advanced Materials Engineering, Kookmin University, Jeongneung-dong Seongbuk-gu, Seoul 136-702 (Korea, Republic of); Minary-Jolandan, Majid [Department of Mechanical Engineering, The University of Texas at Dallas, Richardson, TX 75080 (United States); Alan MacDiarmid Nanotech Institute, The University of Texas at Dallas, 800 W Campbell Road RL 10, Richardson TX 75080 (United States)

    2016-12-15

    Two-dimensional materials such as graphene and MoS{sub 2} have been the main focus of intense research efforts over the past few years. The most common method of exfoliating these materials, although efficient for lab-scale experiments, is not acceptable for large area and practical applications. Here, we report the deposition of MoS{sub 2} layered films on amorphous (SiO{sub 2}) and crystalline substrates (sapphire) using a pulsed laser deposition (PLD) method. Increased substrate temperature (∝700 C) and laser energy density (>530 mJ /cm{sup 2}) promotes crystalline MoS{sub 2} films < 20 nm, as demonstrated by fast Fourier transform (FFT) and transmission electron microscopy (TEM). The method reported here opens the possibility for large area layered MoS{sub 2} films by using a laser ablation processes. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  17. Pulsed-laser deposition and growth studies of Bi3Fe5O12 thin films

    International Nuclear Information System (INIS)

    Lux, Robert; Heinrich, Andreas; Leitenmeier, Stephan; Koerner, Timo; Herbort, Michael; Stritzker, Bernd

    2006-01-01

    Magneto-optical garnets are attractive because of their high Faraday rotation and low optical loss in the near infrared. Therefore their use is generally in nonreciprocal devices, i.e., as optical isolators in optical communication. In this paper we present data concerning the deposition of Bi 3 Fe 5 O 12 (BIG) thin films on (100) and (111) Gd 3 Ga 5 O 12 substrates using pulsed-laser deposition. Laser-induced processes on the surface of the oxide target used for ablation were analyzed and numerous films were deposited. We found the BIG film quality to be strongly affected by oxygen pressure, laser energy density, and the Bi/Fe film ratio, whereas temperature had a minor influence. We also investigated the BIG-film deposition using a target pressed from metallic Bi and Fe powders and found information on the growth behavior of BIG. We report on details of the film deposition and film properties determined by environmental scanning electron microscopy, energy dispersive x-ray analysis, Rutherford backscattering spectroscopy, and x-ray diffraction. In addition, we determined the Faraday rotation of the films

  18. Optical Properties Dependence with Gas Pressure in AlN Films Deposited by Pulsed Laser Ablation

    International Nuclear Information System (INIS)

    Perez, J A; Riascos, H; Caicedo, J C; Cabrera, G; Yate, L

    2011-01-01

    AlN films were deposited by pulsed laser deposition technique (PLD) using an Nd: YAG laser (λ = 1064 nm). The films were deposited in a nitrogen atmosphere as working gas; the target was an aluminum high purity (99.99%). The films were deposited with a laser fluence of 7 J/cm2 for 10 minutes on silicon (100) substrates. The substrate temperature was 300 deg. C and the working pressure was varied from 3 mtorr to 11 mtorr. The thickness measured by profilometer was 150 nm for all films. The crystallinity was observed via XRD pattern, the morphology and composition of the films were studied using scanning electron microscopy (SEM) and Energy Dispersive X-ray analysis (EDX), respectively. The optical reflectance spectra and color coordinates of the films were obtained by optical spectral reflectometry technique in the range of 400 cm-1- 900 cm-1 by an Ocean Optics 2000 spectrophotometer. In this work, a clear dependence of the reflectance, dominant wavelength and color purity was found in terms of the applied pressure to the AlN films. A reduction in reflectance of about 55% when the pressure was increased from 3 mtorr to 11 mtorr was observed. This paper deals with the formation of AlN thin films as promising materials for the integration of SAW devices on Si substrates due to their good piezoelectric properties and the possibility of deposition at low temperature compatible with the manufacturing of Si integrated circuits.

  19. Optical Properties Dependence with Gas Pressure in AlN Films Deposited by Pulsed Laser Ablation

    Energy Technology Data Exchange (ETDEWEB)

    Perez, J A; Riascos, H [Departamento de Fisica, Universidad Tecnologica de Pereira, Grupo plasma Laser y Aplicaciones A.A 097 (Colombia); Caicedo, J C [Grupo pelIculas delgadas, Universidad del Valle, Cali (Colombia); Cabrera, G; Yate, L, E-mail: jcaicedoangulo@gmail.com [Department de Fisica Aplicada i Optica, Universitat de Barcelona, Catalunya (Spain)

    2011-01-01

    AlN films were deposited by pulsed laser deposition technique (PLD) using an Nd: YAG laser ({lambda} = 1064 nm). The films were deposited in a nitrogen atmosphere as working gas; the target was an aluminum high purity (99.99%). The films were deposited with a laser fluence of 7 J/cm2 for 10 minutes on silicon (100) substrates. The substrate temperature was 300 deg. C and the working pressure was varied from 3 mtorr to 11 mtorr. The thickness measured by profilometer was 150 nm for all films. The crystallinity was observed via XRD pattern, the morphology and composition of the films were studied using scanning electron microscopy (SEM) and Energy Dispersive X-ray analysis (EDX), respectively. The optical reflectance spectra and color coordinates of the films were obtained by optical spectral reflectometry technique in the range of 400 cm-1- 900 cm-1 by an Ocean Optics 2000 spectrophotometer. In this work, a clear dependence of the reflectance, dominant wavelength and color purity was found in terms of the applied pressure to the AlN films. A reduction in reflectance of about 55% when the pressure was increased from 3 mtorr to 11 mtorr was observed. This paper deals with the formation of AlN thin films as promising materials for the integration of SAW devices on Si substrates due to their good piezoelectric properties and the possibility of deposition at low temperature compatible with the manufacturing of Si integrated circuits.

  20. Multi-stage pulsed laser deposition of aluminum nitride at different temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Duta, L. [National Institute for Lasers, Plasma, and Radiation Physics, 409 Atomistilor Street, 077125 Magurele (Romania); Stan, G.E. [National Institute of Materials Physics, 105 bis Atomistilor Street, 077125 Magurele (Romania); Stroescu, H.; Gartner, M.; Anastasescu, M. [Institute of Physical Chemistry “Ilie Murgulescu”, Romanian Academy, 202 Splaiul Independentei, 060021 Bucharest (Romania); Fogarassy, Zs. [Research Institute for Technical Physics and Materials Science, Hungarian Academy of Sciences, Konkoly Thege Miklos u. 29-33, H-1121 Budapest (Hungary); Mihailescu, N. [National Institute for Lasers, Plasma, and Radiation Physics, 409 Atomistilor Street, 077125 Magurele (Romania); Szekeres, A., E-mail: szekeres@issp.bas.bg [Institute of Solid State Physics, Bulgarian Academy of Sciences, Tzarigradsko Chaussee 72, Sofia 1784 (Bulgaria); Bakalova, S. [Institute of Solid State Physics, Bulgarian Academy of Sciences, Tzarigradsko Chaussee 72, Sofia 1784 (Bulgaria); Mihailescu, I.N., E-mail: ion.mihailescu@inflpr.ro [National Institute for Lasers, Plasma, and Radiation Physics, 409 Atomistilor Street, 077125 Magurele (Romania)

    2016-06-30

    Highlights: • Multi-stage pulsed laser deposition of aluminum nitride at different temperatures. • 800 °C seed film boosts the next growth of crystalline structures at lower temperature. • Two-stage deposited AlN samples exhibit randomly oriented wurtzite structures. • Band gap energy values increase with deposition temperature. • Correlation was observed between single- and multi-stage AlN films. - Abstract: We report on multi-stage pulsed laser deposition of aluminum nitride (AlN) on Si (1 0 0) wafers, at different temperatures. The first stage of deposition was carried out at 800 °C, the optimum temperature for AlN crystallization. In the second stage, the deposition was conducted at lower temperatures (room temperature, 350 °C or 450 °C), in ambient Nitrogen, at 0.1 Pa. The synthesized structures were analyzed by grazing incidence X-ray diffraction (GIXRD), transmission electron microscopy (TEM), atomic force microscopy and spectroscopic ellipsometry (SE). GIXRD measurements indicated that the two-stage deposited AlN samples exhibited a randomly oriented wurtzite structure with nanosized crystallites. The peaks were shifted to larger angles, indicative for smaller inter-planar distances. Remarkably, TEM images demonstrated that the high-temperature AlN “seed” layers (800 °C) promoted the growth of poly-crystalline AlN structures at lower deposition temperatures. When increasing the deposition temperature, the surface roughness of the samples exhibited values in the range of 0.4–2.3 nm. SE analyses showed structures which yield band gap values within the range of 4.0–5.7 eV. A correlation between the results of single- and multi-stage AlN depositions was observed.

  1. Nanomechanical properties of GaSe thin films deposited on Si(1 1 1) substrates by pulsed laser deposition

    International Nuclear Information System (INIS)

    Jian, Sheng-Rui; Juang, Jenh-Yih; Luo, Chih-Wei; Ku, Shin-An; Wu, Kaung-Hsiung

    2012-01-01

    Highlights: ► GaSe thin films are grown by PLD. ► Structural properties of GaSe thin films are measured by XRD. ► Hardness and Young’s modulus of GaSe thin films are measured by nanoindentation. - Abstract: The correlations between the crystalline structure and mechanical properties of GaSe thin films were investigated by means of X-ray diffraction (XRD) and nanoindentation techniques. The GaSe thin films were deposited on Si(1 1 1) substrates deposited at various deposition temperatures using pulsed laser deposition (PLD). The XRD results indicate that all the GaSe thin films are pure hexagonal phase with highly (0 0 0 l)-oriented characteristics. Nanoindentation results revealed apparent discontinuities (so-called multiple “pop-in” events) in the load-displacement curve, while no discontinuity was observed in the unloading segment of the load-displacement curve. The hardness and Young’s modulus of GaSe thin films determined by the continuous stiffness measurements (CSM) method indicated that both mechanical parameters increased with the increasing deposition temperature with the hardness and the Young’s modulus being increased from 1.2 ± 0.1 to 1.8 ± 0.1 GPa and from 39.6 ± 1.2 to 68.9 ± 2.7 GPa, respectively, as the deposition temperature was raised from 400 to 475 °C. These results suggest that the increased grain size might have played a prominent role in determining the mechanical properties of the PLD-derived GaSe thin films.

  2. The Influence of the Powder Stream on High-Deposition-Rate Laser Metal Deposition with Inconel 718

    Directory of Open Access Journals (Sweden)

    Chongliang Zhong

    2017-10-01

    Full Text Available For the purpose of improving the productivity of laser metal deposition (LMD, the focus of current research is set on increasing the deposition rate, in order to develop high-deposition-rate LMD (HDR-LMD. The presented work studies the effects of the powder stream on HDR-LMD with Inconel 718. Experiments have been designed and conducted by using different powder feeding nozzles—a three-jet and a coaxial powder feeding nozzle—since the powder stream is mainly determined by the geometry of the powder feeding nozzle. After the deposition trials, metallographic analysis of the samples has been performed. The laser intensity distribution (LID and the powder stream intensity distribution (PID have been characterized, based on which the processes have been simulated. Finally, for verifying and correcting the used models for the simulation, the simulated results have been compared with the experimental results. Through the conducted work, suitable boundary conditions for simulating the process with different powder streams has been determined, and the effects of the powder stream on the process have also been determined. For a LMD process with a three-jet nozzle a substantial part of the powder particles that hit the melt pool surface are rebounded; for a LMD process with a coaxial nozzle almost all the particles are caught in the melt pool. This is due to the different particle velocities achieved with the two different nozzles. Moreover, the powder stream affects the heat exchange between the heated particles and the melt pool: a surface boundary condition applies for a powder stream with lower particle velocities, in the experiment provided by a three-jet nozzle, and a volumetric boundary condition applies for a powder stream with higher particle velocities, provided by a coaxial nozzle.

  3. Monolithic Laser Scribed Graphene Scaffold with Atomic Layer Deposited Platinum for Hydrogen Evolution Reaction

    KAUST Repository

    Nayak, Pranati; Jiang, Qiu; Kurra, Narendra; Buttner, Ulrich; Wang, Xianbin; Alshareef, Husam N.

    2017-01-01

    The use of three-dimensional (3D) electrode architectures as scaffolds for conformal deposition of catalysts is an emerging research area with significant potential for electrocatalytic applications. In this study, we report the fabrication of monolithic, self-standing, 3D graphitic carbon scaffold with conformally deposited Pt by atomic layer deposition (ALD) as a hydrogen evolution reaction catalyst. Laser scribing is employed to transform polyimide into 3D porous graphitic carbon, which possesses good electronic conductivity and numerous edge plane sites. This laser scribed graphene (LSG) architecture makes it possible to fabricate monolithic electrocatalyst support without any binders or conductive additives. The synergistic effect between ALD of Pt on 3D network of LSG provides an avenue for minimal yet effective Pt usage, leading to an enhanced HER activity. This strategy establish a general approach for inexpensive and large scale HER device fabrication with minimum catalyst cost.

  4. Structural characterization of thin films of titanium nitride deposited by laser ablation

    International Nuclear Information System (INIS)

    Castro C, M.A.; Escobar A, L.; Camps C, E.; Mejia H, J.A.

    2004-01-01

    Thin films of titanium nitride were deposited using the technique of laser ablation. It was studied the effect of the density of laser energy used for ablation the target as well as of the pressure of the work gas about the structure and the hardness of the deposited thin films. Depending on the pressure of the work gas films was obtained with preferential orientation in the directions (200) and (111). At a pressure of 1 x 10 -2 Torr only the direction (200) was observed. On the other hand to the pressure of 5 x 10 -3 Torr the deposited material this formed by a mixture of the orientation (200) and (111), being the direction (111) the predominant one. Thin films of Ti N were obtained with hardness of up to 24.0 GPa that makes to these attractive materials for mechanical applications. The hardness showed an approximately linear dependence with the energy density. (Author)

  5. Plume-induced stress in pulsed-laser deposited CeO2 films

    International Nuclear Information System (INIS)

    Norton, D.P.; Park, C.; Budai, J.D.; Pennycook, S.J.; Prouteau, C.

    1999-01-01

    Residual compressive stress due to plume-induced energetic particle bombardment in CeO 2 films deposited by pulsed-laser deposition is reported. For laser ablation film growth in low pressures, stresses as high as 2 GPa were observed as determined by substrate curvature and four-circle x-ray diffraction. The amount of stress in the films could be manipulated by controlling the kinetic energies of the ablated species in the plume through gas-phase collisions with an inert background gas. The film stress decreased to near zero for argon background pressures greater than 50 mTorr. At these higher background pressures, the formation of nanoparticles in the deposited film was observed. copyright 1999 American Institute of Physics

  6. Hypersonic wave drag reduction performance of cylinders with repetitive laser energy depositions

    International Nuclear Information System (INIS)

    Fang, J; Hong, Y J; Li, Q; Huang, H

    2011-01-01

    It has been widely research that wave drag reduction on hypersonic vehicle by laser energy depositions. Using laser energy to reduce wave drag can improve vehicle performance. A second order accurate scheme based on finite-difference method and domain decomposition of structural grid is used to compute the drag performance of cylinders in a hypersonic flow of Mach number 2 at altitude of 15km with repetitive energy depositions. The effects of frequency on drag reduction are studied. The calculated results show: the recirculation zone is generated due to the interaction between bow shock over the cylinder and blast wave produced by energy deposition, and a virtual spike which is supported by an axis-symmetric recirculation, is formed in front of the cylinder. By increasing the repetitive frequency, the drag is reduced and the oscillation of the drag is decreased; however, the energy efficiency decreases by increasing the frequency.

  7. Crystallization kinetics of GeTe phase-change thin films grown by pulsed laser deposition

    Science.gov (United States)

    Sun, Xinxing; Thelander, Erik; Gerlach, Jürgen W.; Decker, Ulrich; Rauschenbach, Bernd

    2015-07-01

    Pulsed laser deposition was employed to the growth of GeTe thin films on Silicon substrates. X-ray diffraction measurements reveal that the critical crystallization temperature lies between 220 and 240 °C. Differential scanning calorimetry was used to investigate the crystallization kinetics of the as-deposited films, determining the activation energy to be 3.14 eV. Optical reflectivity and in situ resistance measurements exhibited a high reflectivity contrast of ~21% and 3-4 orders of magnitude drop in resistivity of the films upon crystallization. The results show that pulsed laser deposited GeTe films can be a promising candidate for phase-change applications.

  8. Crystallization kinetics of GeTe phase-change thin films grown by pulsed laser deposition

    International Nuclear Information System (INIS)

    Sun, Xinxing; Thelander, Erik; Gerlach, Jürgen W; Decker, Ulrich; Rauschenbach, Bernd

    2015-01-01

    Pulsed laser deposition was employed to the growth of GeTe thin films on Silicon substrates. X-ray diffraction measurements reveal that the critical crystallization temperature lies between 220 and 240 °C. Differential scanning calorimetry was used to investigate the crystallization kinetics of the as-deposited films, determining the activation energy to be 3.14 eV. Optical reflectivity and in situ resistance measurements exhibited a high reflectivity contrast of ∼21% and 3–4 orders of magnitude drop in resistivity of the films upon crystallization. The results show that pulsed laser deposited GeTe films can be a promising candidate for phase-change applications. (paper)

  9. Monolithic Laser Scribed Graphene Scaffold with Atomic Layer Deposited Platinum for Hydrogen Evolution Reaction

    KAUST Repository

    Nayak, Pranati

    2017-09-01

    The use of three-dimensional (3D) electrode architectures as scaffolds for conformal deposition of catalysts is an emerging research area with significant potential for electrocatalytic applications. In this study, we report the fabrication of monolithic, self-standing, 3D graphitic carbon scaffold with conformally deposited Pt by atomic layer deposition (ALD) as a hydrogen evolution reaction catalyst. Laser scribing is employed to transform polyimide into 3D porous graphitic carbon, which possesses good electronic conductivity and numerous edge plane sites. This laser scribed graphene (LSG) architecture makes it possible to fabricate monolithic electrocatalyst support without any binders or conductive additives. The synergistic effect between ALD of Pt on 3D network of LSG provides an avenue for minimal yet effective Pt usage, leading to an enhanced HER activity. This strategy establish a general approach for inexpensive and large scale HER device fabrication with minimum catalyst cost.

  10. Morphological and crystalline characterization of pulsed laser deposited pentacene thin films for organic transistor applications

    Science.gov (United States)

    Pereira, Antonio; Bonhommeau, Sébastien; Sirotkin, Sergey; Desplanche, Sarah; Kaba, Mamadouba; Constantinescu, Catalin; Diallo, Abdou Karim; Talaga, David; Penuelas, Jose; Videlot-Ackermann, Christine; Alloncle, Anne-Patricia; Delaporte, Philippe; Rodriguez, Vincent

    2017-10-01

    We show that high-quality pentacene (P5) thin films of high crystallinity and low surface roughness can be produced by pulsed laser deposition (PLD) without inducing chemical degradation of the molecules. By using Raman spectroscopy and X-ray diffraction measurements, we also demonstrate that the deposition of P5 on Au layers result in highly disordered P5 thin films. While the P5 molecules arrange within the well-documented 1.54-nm thin-film phase on high-purity fused silica substrates, this ordering is indeed destroyed upon introducing an Au interlayer. This observation may be one explanation for the low electrical performances measured in P5-based organic thin film transistors (OTFTs) deposited by laser-induced forward transfer (LIFT).

  11. Structural strengthening of rocket nozzle extension by means of laser metal deposition

    Science.gov (United States)

    Honoré, M.; Brox, L.; Hallberg, M.

    2012-03-01

    Commercial space operations strive to maximize the payload per launch in order to minimize the costs of each kg launched into orbit; this yields demand for ever larger launchers with larger, more powerful rocket engines. Volvo Aero Corporation in collaboration with Snecma and Astrium has designed and tested a new, upgraded Nozzle extension for the Vulcain 2 engine configuration, denoted Vulcain 2+ NE Demonstrator The manufacturing process for the welding of the sandwich wall and the stiffening structure is developed in close cooperation with FORCE Technology. The upgrade is intended to be available for future development programs for the European Space Agency's (ESA) highly successful commercial launch vehicle, the ARIANE 5. The Vulcain 2+ Nozzle Extension Demonstrator [1] features a novel, thin-sheet laser-welded configuration, with laser metal deposition built-up 3D-features for the mounting of stiffening structure, flanges and for structural strengthening, in order to cope with the extreme load- and thermal conditions, to which the rocket nozzle extension is exposed during launch of the 750 ton ARIANE 5 launcher. Several millimeters of material thickness has been deposited by laser metal deposition without disturbing the intricate flow geometry of the nozzle cooling channels. The laser metal deposition process has been applied on a full-scale rocket nozzle demonstrator, and in excess of 15 kilometers of filler wire has been successfully applied to the rocket nozzle. The laser metal deposition has proven successful in two full-throttle, full-scale tests, firing the rocket engine and nozzle in the ESA test facility P5 by DLR in Lampoldshausen, Germany.

  12. Boron reclamation

    International Nuclear Information System (INIS)

    Smith, R.M.

    1980-07-01

    A process to recover high purity 10 B enriched crystalline boron powder from a polymeric matrix was developed on a laboratory basis and ultimately scaled up to production capacity. The process is based on controlled pyrolysis of boron-filled scrap followed by an acid leach and dry sieving operation to return the powder to the required purity and particle size specifications. Typically, the recovery rate of the crystalline powder is in excess of 98.5 percent, and some of the remaining boron is recovered in the form of boric acid. The minimum purity requirement of the recovered product is 98.6 percent total boron

  13. Deposition of high Tc superconductor thin films by pulsed excimer laser ablation and their post-synthesis processing

    International Nuclear Information System (INIS)

    Ogale, S.B.

    1992-01-01

    This paper describes the use of pulsed excimer laser ablation technique for deposition of high quality superconductor thin films on different substrate materials such as Y stabilized ZrO 2 , SrTiO 3 , LiNbO 3 , Silicon and Stainless Steels, and dopant incorporation during the film depositions. Processing of deposited films using ion and laser beams for realisation of device features are presented. 28 refs., 16 figs

  14. 3D Laser Imprint Using a Smoother Ray-Traced Power Deposition Method

    Science.gov (United States)

    Schmitt, Andrew J.

    2017-10-01

    Imprinting of laser nonuniformities in directly-driven icf targets is a challenging problem to accurately simulate with large radiation-hydro codes. One of the most challenging aspects is the proper construction of the complex and rapidly changing laser interference structure driving the imprint using the reduced laser propagation models (usually ray-tracing) found in these codes. We have upgraded the modelling capability in our massively-parallel fastrad3d code by adding a more realistic EM-wave interference structure. This interference model adds an axial laser speckle to the previous transverse-only laser structure, and can be impressed on our improved smoothed 3D raytrace package. This latter package, which connects rays to form bundles and performs power deposition calculations on the bundles, is intended to decrease ray-trace noise (which can mask or add to imprint) while using fewer rays. We apply this improved model to 3D simulations of recent imprint experiments performed on the Omega-EP laser and the Nike laser that examined the reduction of imprinting due to very thin high-Z target coatings. We report on the conditions in which this new model makes a significant impact on the development of laser imprint. Supported by US DoE/NNSA.

  15. Review of progress in pulsed laser deposition and using Nd:YAG laser in processing of high Tc superconductors

    International Nuclear Information System (INIS)

    Chen, C.W.; Mukherjee, K.

    1993-01-01

    The current progress in pulsed laser ablation of high-temperature superconductors is reviewed with emphasis on the effect of pulse-width and wavelength, nature of the plasma plume, post-annealing and methods to improve quality of films grown at low temperature. An ion beam assisted millisecond pulsed laser vapor deposition process has been developed to fabricate YBa 2 Cu 3 O x high T. superconductor thin films. Solution to target overheating problem, effects of oxygen ion beam, properties of deposited films, and effect of silver buffer layer on YSZ substrate are presented. A new laser calcining process has been used to produce near single phase high T c superconductors of Bi-Pb-Sr-Ca-Cu-0 system. The total processing time was reduced to about 100 hours which is about half of that for conventional sintering. For this compound both resistance and magnetic susceptibility data showed an onset of superconducting transition at about 110K. A sharp susceptibility drop was observed above 106K. The zero resistance temperature was about 98K. High T c phase was formed via a different kinetic path in laser calcined sample compare with the conventionally processed sample

  16. Growth of superconducting MgB2 films by pulsed-laser deposition using a Nd-YAG laser

    International Nuclear Information System (INIS)

    Badica, P; Togano, K; Awaji, S; Watanabe, K

    2006-01-01

    Thin films of MgB 2 on r-cut Al 2 O 3 substrates have been grown by pulsed-laser deposition (PLD) using a Nd-YAG laser (fourth harmonic-266 nm) instead of the popular KrF excimer laser. The growth window to obtain superconducting films is laser energy 350-450 mJ and vacuum pressure with Ar-buffer gas of 1-8/10 Pa (initial background vacuum 0.5-1 x 10 -3 Pa). Films were deposited at room temperature and post-annealed in situ and ex situ at temperatures of 500-780 0 C and up to 1 h. Films are randomly oriented with maximum critical temperature (offset of resistive transition) of 27 K. SEM/TEM/EDS investigations show that they are mainly composed of small sphere-like particles (≤20 nm), and contain oxygen and some carbon, uniformly distributed in the flat matrix, but the amount of Mg and/or oxygen is higher in the aggregates-droplets (100-1000 nm) observed on the surface of the film's matrix. Some aspects of the processing control and dependences on film characteristics are discussed. The technique is promising for future development of coated conductors

  17. Deposition of thin layers of boron nitrides and hydrogenated microcrystalline silicon assisted by high current direct current arc plasma; Deposition assistee par un plasma a arc a haut courant continu de couches minces de Nitrure de Bore et de Silicium microcristallin hydrogene

    Energy Technology Data Exchange (ETDEWEB)

    Franz, D. [Ecole Polytechnique Federale de Lausanne, Centre de Recherches en Physique des Plasmas (CRPP), CH-1015 Lausanne (Switzerland)

    1999-09-01

    In the frame of this thesis, a high current direct current arc (HCDCA) used for the industrial deposition of diamond, has been adapted to study the deposition of two types of coatings: a) boron nitride, whose cubic phase is similar to diamond, for tribological applications, b) hydrogenated microcrystalline silicon, for applications in the semiconductor fields (flat panel displays, solar cells,...). For the deposition of these coatings, the substrates were placed in the diffusion region of the arc. The substrate heating is mainly due to atomic species recombining on its surface. The deposition temperature, varying from 300 to 900 {sup o}C according to the films deposited, is determined by the substrate position, the arc power and the injected gas fluxes, without the use of any external heating or cooling system. Measurements performed on the arc plasma show that the electronic temperature is around 2 eV (23'000 K) while the gas temperature is lower than 5500 K. Typical electronic densities are in the range of 10{sup 12}-10{sup 1'}3 cm{sup -3}. For the deposition of boron nitride films, different boron precursors were used and a wide parameter range was investigated. The extreme difficulty of synthesising cubic boron nitride films by chemical vapour deposition (CVD) did not allow to stabilize the cubic phase of boron nitride in HCDCA. Coatings resulted in hexagonal or amorphous boron nitride with a chemical composition close to stoichiometric. The presence of hydrogen leads to the deposition of rough and porous films. Negative biasing of the samples, for positive ion bombardment, is commonly used to stabilize the cubic phase. In HCDCA and in our biasing range, only a densification of the films could be observed. A boron nitride deposition plasma study by infrared absorption spectroscopy in a capacitive radio frequency reactor has demonstrated the usefulness of this diagnostic for the understanding of the various chemical reactions which occur in this kind

  18. Applications of ultra-short pulsed laser ablation: thin films deposition and fs/ns dual-pulse laser-induced breakdown spectroscopy

    International Nuclear Information System (INIS)

    Teghil, R; De Bonis, A; Galasso, A; Santagata, A; Albano, G; Villani, P; Spera, D; Parisi, G P

    2008-01-01

    In this paper, we report a survey of two of the large number of possible practical applications of the laser ablation performed by an ultra-short pulse laser, namely pulsed laser deposition (PLD) and fs/ns dual-pulse laser-induced breakdown spectroscopy (DP-LIBS). These applications differ from those using just longer pulsed lasers as a consequence of the distinctive characteristics of the plasma produced by ultra-short laser beams. The most important feature of this plasma is the large presence of particles with nanometric size which plays a fundamental role in both applications.

  19. Optical and electrical characteristics of plasma enhanced chemical vapor deposition boron carbonitride thin films derived from N-trimethylborazine precursor

    Energy Technology Data Exchange (ETDEWEB)

    Sulyaeva, Veronica S., E-mail: veronica@niic.nsc.ru [Department of Functional Materials Chemistry, Nikolaev Institute of Inorganic Chemistry SB RAS, Novosibirsk 630090 (Russian Federation); Kosinova, Marina L.; Rumyantsev, Yurii M.; Kuznetsov, Fedor A. [Department of Functional Materials Chemistry, Nikolaev Institute of Inorganic Chemistry SB RAS, Novosibirsk 630090 (Russian Federation); Kesler, Valerii G. [Laboratory of Physical Principles for Integrated Microelectronics, Rzhanov Institute of Semiconductor Physics SB RAS, Novosibirsk 630090 (Russian Federation); Kirienko, Viktor V. [Laboratory of Nonequilibrium Semiconductors Systems, Rzhanov Institute of Semiconductor Physics SB RAS, Novosibirsk 630090 (Russian Federation)

    2014-05-02

    Thin BC{sub x}N{sub y} films have been obtained by plasma enhanced chemical vapor deposition using N-trimethylborazine as a precursor. The films were deposited on Si(100) and fused silica substrates. The grown films were characterized by ellipsometry, Fourier transform infrared spectroscopy, scanning electron microscopy, X-ray energy dispersive spectroscopy, X-ray photoelectron spectroscopy, spectrophotometry, capacitance–voltage and current–voltage measurements. The deposition parameters, such as substrate temperature (373–973 K) and gas phase composition were varied. Low temperature BC{sub x}N{sub y} films were found to be high optical transparent layers in the range of 300–2000 nm, the transmittance as high as 93% has been achieved. BC{sub x}N{sub y} layers are dielectrics with dielectric constant k = 2.2–8.9 depending on the synthesis conditions. - Highlights: • Thin BC{sub x}N{sub y} films have been obtained by plasma enhanced chemical vapor deposition. • N-trimethylborazine was used as a precursor. • Low temperature BC{sub x}N{sub y} films were found to be high optical transparent layers (93%). • BC{sub x}N{sub y} layers are dielectrics with dielectric constant k = 2.2–8.9.

  20. Optical and electrical characteristics of plasma enhanced chemical vapor deposition boron carbonitride thin films derived from N-trimethylborazine precursor

    International Nuclear Information System (INIS)

    Sulyaeva, Veronica S.; Kosinova, Marina L.; Rumyantsev, Yurii M.; Kuznetsov, Fedor A.; Kesler, Valerii G.; Kirienko, Viktor V.

    2014-01-01

    Thin BC x N y films have been obtained by plasma enhanced chemical vapor deposition using N-trimethylborazine as a precursor. The films were deposited on Si(100) and fused silica substrates. The grown films were characterized by ellipsometry, Fourier transform infrared spectroscopy, scanning electron microscopy, X-ray energy dispersive spectroscopy, X-ray photoelectron spectroscopy, spectrophotometry, capacitance–voltage and current–voltage measurements. The deposition parameters, such as substrate temperature (373–973 K) and gas phase composition were varied. Low temperature BC x N y films were found to be high optical transparent layers in the range of 300–2000 nm, the transmittance as high as 93% has been achieved. BC x N y layers are dielectrics with dielectric constant k = 2.2–8.9 depending on the synthesis conditions. - Highlights: • Thin BC x N y films have been obtained by plasma enhanced chemical vapor deposition. • N-trimethylborazine was used as a precursor. • Low temperature BC x N y films were found to be high optical transparent layers (93%). • BC x N y layers are dielectrics with dielectric constant k = 2.2–8.9

  1. Optoelectronic Characterization of Ta-Doped ZnO Thin Films by Pulsed Laser Deposition.

    Science.gov (United States)

    Koo, Horng-Show; Peng, Jo-Chi; Chen, Mi; Chin, Hung-I; Chen, Jaw-Yeh; Wu, Maw-Kuen

    2015-11-01

    Transparent conductive oxide of Ta-doped ZnO (TZO) film with doping amount of 3.0 wt% have been deposited on glass substrates (Corning Eagle XG) at substrate temperatures of 100 to 500 degrees C by the pulsed laser deposition (PLD) technique. The effect of substrate temperature on the structural, optical and electronic characteristics of Ta-doped ZnO (TZO) films with 3.0 wt% dopant of tantalum oxide (Ta2O5) was measured and demonstrated in terms of X-ray diffraction (XRD), ultraviolet-visible spectrometer (UV-Vis), four-probe and Hall-effect measurements. X-ray diffraction pattern shows that TZO films grow in hexagonal crystal structure of wurtzite phase with a preferred orientation of the crystallites along (002) direction and exhibits better physical characteristics of optical transmittance, electrical conductivity, carrier concentration and mobility for the application of window layer in the optoelectronic devices of solar cells, OLEDs and LEDs. The lowest electrical resistivity (ρ) and the highest carrier concentration of the as-deposited film deposited at 300 degrees C are measured as 2.6 x 10(-3) Ω-cm and 3.87 x 10(-20) cm(-3), respectively. The highest optical transmittance of the as-deposited film deposited at 500 degrees C is shown to be 93%, compared with another films deposited below 300 degrees C. It is found that electrical and optical properties of the as-deposited TZO film are greatly dependent on substrate temperature during laser ablation deposition.

  2. Laser deposition and direct-writing of thermoelectric misfit cobaltite thin films

    Science.gov (United States)

    Chen, Jikun; Palla-Papavlu, Alexandra; Li, Yulong; Chen, Lidong; Shi, Xun; Döbeli, Max; Stender, Dieter; Populoh, Sascha; Xie, Wenjie; Weidenkaff, Anke; Schneider, Christof W.; Wokaun, Alexander; Lippert, Thomas

    2014-06-01

    A two-step process combining pulsed laser deposition of calcium cobaltite thin films and a subsequent laser induced forward transfer as micro-pixel is demonstrated as a direct writing approach of micro-scale thin film structures for potential applications in thermoelectric micro-devices. To achieve the desired thermo-electric properties of the cobaltite thin film, the laser induced plasma properties have been characterized utilizing plasma mass spectrometry establishing a direct correlation to the corresponding film composition and structure. The introduction of a platinum sacrificial layer when growing the oxide thin film enables a damage-free laser transfer of calcium cobaltite thereby preserving the film composition and crystallinity as well as the shape integrity of the as-transferred pixels. The demonstrated direct writing approach simplifies the fabrication of micro-devices and provides a large degree of flexibility in designing and fabricating fully functional thermoelectric micro-devices.

  3. Low-temperature processed ZnO and CdS photodetectors deposited by pulsed laser deposition

    International Nuclear Information System (INIS)

    Hernandez-Como, N; Moreno, S; Mejia, I; Quevedo-Lopez, M A

    2014-01-01

    UV-VIS photodetectors using an interdigital configuration, with zinc oxide (ZnO) and cadmium sulfide (CdS) semiconductors deposited by pulsed laser deposition, were fabricated with a maximum processing temperature of 100 °C. Without any further post-growth annealing, the photodetectors are compatible with flexible and transparent substrates. Aluminum (Al) and indium tin oxide (ITO) were investigated as contacts. Focusing on underwater communications, the impact of metal contact (ITO versus Al) was investigated to determine the maximum responsivity using a laser with a 405 nm wavelength. As expected, the responsivity increases for reduced metal finger separation. This is a consequence of reduced carrier transit time for shorter finger separation. For ITO, the highest responsivities for both films (ZnO and CdS) were ∼3 A W −1 at 5 V. On the other hand, for Al contacts, the maximum responsivities at 5 V were ∼0.1 A W −1 and 0.7 A W −1 for CdS and ZnO, respectively. (paper)

  4. Separation process for boron isotopes

    Energy Technology Data Exchange (ETDEWEB)

    Rockwood, S D

    1975-06-12

    The method according to the invention is characterized by the steps of preparing a gaseous mixture of BCl/sub 3/ containing the isotopes of boron and oxygen as the extractor, irradiating that mixture in the tube of the separator device by means of P- or R-lines of a CO/sub 2/ laser for exciting the molecules containing a given isotope of boron, simultaneously irradiating the mixture with UV for photodissociating the excited BCl/sub 3/ molecules and separating BCl/sub 3/ from the reaction products of photodissociation and from oxygen. Such method is suitable for preparing boron used in nuclear reactors.

  5. Laser damage resistance of hafnia thin films deposited by electron beam deposition, reactive low voltage ion plating, and dual ion beam sputtering

    International Nuclear Information System (INIS)

    Gallais, Laurent; Capoulade, Jeremie; Natoli, Jean-Yves; Commandre, Mireille; Cathelinaud, Michel; Koc, Cian; Lequime, Michel

    2008-01-01

    A comparative study is made of the laser damage resistance of hafnia coatings deposited on fused silica substrates with different technologies: electron beam deposition (from Hf or HfO2 starting material), reactive low voltage ion plating, and dual ion beam sputtering.The laser damage thresholds of these coatings are determined at 1064 and 355 nm using a nanosecond pulsed YAG laser and a one-on-one test procedure. The results are associated with a complete characterization of the samples: refractive index n measured by spectrophotometry, extinction coefficient k measured by photothermal deflection, and roughness measured by atomic force microscopy

  6. Structural and Magnetic Properties of Mn doped ZnO Thin Film Deposited by Pulsed Laser Deposition

    KAUST Repository

    Baras, Abdulaziz

    2011-07-01

    Diluted magnetic oxide (DMO) research is a growing field of interdisciplinary study like spintronic devices and medical imaging. A definite agreement among researchers concerning the origin of ferromagnetism in DMO has yet to be reached. This thesis presents a study on the structural and magnetic properties of DMO thin films. It attempts to contribute to the understanding of ferromagnetism (FM) origin in DMO. Pure ZnO and Mn doped ZnO thin films have been deposited by pulsed laser deposition (PLD) using different deposition conditions. This was conducted in order to correlate the change between structural and magnetic properties. Structural properties of the films were characterized using x-ray diffraction (XRD) and scanning electron microscopy (SEM). The superconducting quantum interference device (SQUID) was used to investigate the magnetic properties of these films. The structural characterizations showed that the quality of pure ZnO and Mn doped ZnO films increased as oxygen pressure (PO) increased during deposition. All samples were insulators. In Mn doped films, Mn concentration decreased as PO increased. The Mn doped ZnO samples were deposited at 600˚C and oxygen pressure from 50-500mTorr. All Mn doped films displayed room temperature ferromagnetism (RTFM). However, at 5 K a superparamagnetic (SPM) behavior was observed in these samples. This result was accounted for by the supposition that there were secondary phase(s) causing the superparamagnetic behavior. Our findings hope to strengthen existing research on DMO origins and suggest that secondary phases are the core components that suppress the ferromagnetism. Although RTFM and SPM at low temperature has been observed in other systems (e.g., Co doped ZnO), we are the first to report this behavior in Mn doped ZnO. Future research might extend the characterization and exploration of ferromagnetism in this system.

  7. Antimony sulfide thin films prepared by laser assisted chemical bath deposition

    International Nuclear Information System (INIS)

    Shaji, S.; Garcia, L.V.; Loredo, S.L.; Krishnan, B.

    2017-01-01

    Highlights: • Antimony sulfide thin films were prepared by normal CBD and laser assisted CBD. • Characterized these films using XRD, XPS, AFM, optical and electrical measurements. • Accelerated growth was observed in the laser assisted CBD process. • These films were photoconductive. - Abstract: Antimony sulfide (Sb_2S_3) thin films were prepared by laser assisted chemical bath deposition (LACBD) technique. These thin films were deposited on glass substrates from a chemical bath containing antimony chloride, acetone and sodium thiosulfate under various conditions of normal chemical bath deposition (CBD) as well as in-situ irradiation of the chemical bath using a continuous laser of 532 nm wavelength. Structure, composition, morphology, optical and electrical properties of the Sb_2S_3 thin films produced by normal CBD and LACBD were analyzed by X-Ray diffraction (XRD), Raman Spectroscopy, Atomic force microscopy (AFM), X-Ray photoelectron spectroscopy (XPS), UV–vis spectroscopy and Photoconductivity. The results showed that LACBD is an effective synthesis technique to obtain Sb_2S_3 thin films for optoelectronic applications.

  8. Antimony sulfide thin films prepared by laser assisted chemical bath deposition

    Energy Technology Data Exchange (ETDEWEB)

    Shaji, S., E-mail: sshajis@yahoo.com [Facultad de Ingeniería Mecánica y Eléctrica, Universidad Autónoma de Nuevo León, Av. Pedro de Alba s/n, Ciudad Universitaria, San Nicolás de los Garza, Nuevo León, 66455 (Mexico); CIIDIT—Universidad Autónoma de Nuevo León, Apodaca, Nuevo León (Mexico); Garcia, L.V. [Facultad de Ingeniería Mecánica y Eléctrica, Universidad Autónoma de Nuevo León, Av. Pedro de Alba s/n, Ciudad Universitaria, San Nicolás de los Garza, Nuevo León, 66455 (Mexico); Loredo, S.L. [Centro de Investigación en Materiales Avanzados (CIMAV), Unidad Monterrey, PIIT, Apodaca, Nuevo León (Mexico); Krishnan, B. [Facultad de Ingeniería Mecánica y Eléctrica, Universidad Autónoma de Nuevo León, Av. Pedro de Alba s/n, Ciudad Universitaria, San Nicolás de los Garza, Nuevo León, 66455 (Mexico); CIIDIT—Universidad Autónoma de Nuevo León, Apodaca, Nuevo León (Mexico); and others

    2017-01-30

    Highlights: • Antimony sulfide thin films were prepared by normal CBD and laser assisted CBD. • Characterized these films using XRD, XPS, AFM, optical and electrical measurements. • Accelerated growth was observed in the laser assisted CBD process. • These films were photoconductive. - Abstract: Antimony sulfide (Sb{sub 2}S{sub 3}) thin films were prepared by laser assisted chemical bath deposition (LACBD) technique. These thin films were deposited on glass substrates from a chemical bath containing antimony chloride, acetone and sodium thiosulfate under various conditions of normal chemical bath deposition (CBD) as well as in-situ irradiation of the chemical bath using a continuous laser of 532 nm wavelength. Structure, composition, morphology, optical and electrical properties of the Sb{sub 2}S{sub 3} thin films produced by normal CBD and LACBD were analyzed by X-Ray diffraction (XRD), Raman Spectroscopy, Atomic force microscopy (AFM), X-Ray photoelectron spectroscopy (XPS), UV–vis spectroscopy and Photoconductivity. The results showed that LACBD is an effective synthesis technique to obtain Sb{sub 2}S{sub 3} thin films for optoelectronic applications.

  9. Deposition of Y thin films by nanosecond UV pulsed laser ablation for photocathode application

    Energy Technology Data Exchange (ETDEWEB)

    Lorusso, A. [Università del Salento, Dipartimento di Matematica e Fisica “E. De Giorgi”, 73100 Lecce (Italy); Istituto Nazionale di Fisica Nucleare-Lecce, 73100 Lecce (Italy); Anni, M. [Università del Salento, Dipartimento di Matematica e Fisica “E. De Giorgi”, 73100 Lecce (Italy); Caricato, A.P. [Università del Salento, Dipartimento di Matematica e Fisica “E. De Giorgi”, 73100 Lecce (Italy); Istituto Nazionale di Fisica Nucleare-Lecce, 73100 Lecce (Italy); Gontad, F., E-mail: francisco.gontad@le.infn.it [Università del Salento, Dipartimento di Matematica e Fisica “E. De Giorgi”, 73100 Lecce (Italy); Istituto Nazionale di Fisica Nucleare-Lecce, 73100 Lecce (Italy); Perulli, A. [Università del Salento, Dipartimento di Matematica e Fisica “E. De Giorgi”, 73100 Lecce (Italy); Taurino, A. [National Research Council, Institute for Microelectronics & Microsystems, 73100 Lecce (Italy); Perrone, A. [Università del Salento, Dipartimento di Matematica e Fisica “E. De Giorgi”, 73100 Lecce (Italy); Istituto Nazionale di Fisica Nucleare-Lecce, 73100 Lecce (Italy); Chiadroni, E. [Laboratori Nazionali di Frascati, Istituto Nazionale di Fisica Nucleare, 00044 Frascati (Italy)

    2016-03-31

    In this work, yttrium (Y) thin films have been deposited on Si (100) substrates by the pulsed laser deposition technique. Ex-situ morphological, structural and optical characterisations of such films have been performed by scanning electron microscopy, X-ray diffractometry, atomic force microscopy and ellipsometry. Polycrystalline films with a thickness of 1.2 μm, homogenous with a root mean square roughness of about 2 nm, were obtained by optimised laser irradiation conditions. Despite the relatively high thickness, the films resulted very adherent to the substrates. The high quality of such thin films is important to the synthesis of metallic photocathodes based on Y thin film, which could be used as electron sources of high photoemission performance in radio-frequency guns. - Highlights: • Pulsed laser deposition of Yttrium thin films is investigated. • 1.2 μm thick films were deposited with very low RMS roughness. • The Y thin films were very adherent to the Si substrate • Optical characterisation showed a very high absorption coefficient for the films.

  10. Deposition of Y thin films by nanosecond UV pulsed laser ablation for photocathode application

    International Nuclear Information System (INIS)

    Lorusso, A.; Anni, M.; Caricato, A.P.; Gontad, F.; Perulli, A.; Taurino, A.; Perrone, A.; Chiadroni, E.

    2016-01-01

    In this work, yttrium (Y) thin films have been deposited on Si (100) substrates by the pulsed laser deposition technique. Ex-situ morphological, structural and optical characterisations of such films have been performed by scanning electron microscopy, X-ray diffractometry, atomic force microscopy and ellipsometry. Polycrystalline films with a thickness of 1.2 μm, homogenous with a root mean square roughness of about 2 nm, were obtained by optimised laser irradiation conditions. Despite the relatively high thickness, the films resulted very adherent to the substrates. The high quality of such thin films is important to the synthesis of metallic photocathodes based on Y thin film, which could be used as electron sources of high photoemission performance in radio-frequency guns. - Highlights: • Pulsed laser deposition of Yttrium thin films is investigated. • 1.2 μm thick films were deposited with very low RMS roughness. • The Y thin films were very adherent to the Si substrate • Optical characterisation showed a very high absorption coefficient for the films.

  11. Synthesis of functionally graded bioactive glass-apatite multistructures on Ti substrates by pulsed laser deposition

    International Nuclear Information System (INIS)

    Tanaskovic, D.; Jokic, B.; Socol, G.; Popescu, A.; Mihailescu, I.N.; Petrovic, R.; Janackovic, Dj.

    2007-01-01

    Functionally graded glass-apatite multistructures were synthesized by pulsed laser deposition on Ti substrates. We used sintered targets of hydroxyapatite Ca 10 (PO 4 ) 6 (OH) 2 , or bioglasses in the system SiO 2 -Na 2 O-K 2 O-CaO-MgO-P 2 O 5 with SiO 2 content of either 57 wt.% (6P57) or 61 wt.% (6P61). A UV KrF* (λ = 248 nm, τ > 7 ns) excimer laser source was used for the multipulse laser ablation of the targets. The hydroxyapatite thin films were obtained in H 2 O vapors, while the bioglass layers were deposited in O 2 . Thin films of 6P61 were deposited in direct contact with Ti, because Ti and this glass have similar thermal expansion behaviors, which ensure good bioglass adhesion to the substrate. This glass, however, is not bioactive, so yet more depositions of 6P57 bioglass and/or hydroxyapatite thin films were performed. All structures with hydroxyapatite overcoating were post-treated in a flux of water vapors. The obtained multistructures were characterized by various techniques. X-ray investigations of the coatings found small amounts of crystalline hydroxyapatite in the outer layers. The scanning electron microscopy analyses revealed homogeneous coatings with good adhesion to the Ti substrate. Our studies showed that the multistructures we had obtained were compatible with further use in biomimetic metallic implants with glass-apatite coating applications

  12. Design and spectroscopic reflectometry characterization of pulsed laser deposition combinatorial libraries

    International Nuclear Information System (INIS)

    Schenck, Peter K.; Bassim, Nabil D.; Otani, Makoto; Oguchi, Hiroyuki; Green, Martin L.

    2007-01-01

    The goal of the design of pulsed laser deposition (PLD) combinatorial library films is to optimize the compositional coverage of the films while maintaining a uniform thickness. The deposition pattern of excimer laser PLD films can be modeled with a bimodal cos n distribution. Deposited films were characterized using a spectroscopic reflectometer (250-1000 nm) to map the thickness of both single composition calibration films and combinatorial library films. These distribution functions were used to simulate the composition and thickness of multiple target combinatorial library films. The simulations were correlated with electron-probe microanalysis wavelength-dispersive spectroscopy (EPMA-WDS) composition maps. The composition and thickness of the library films can be fine-tuned by adjusting the laser spot size, fluence, background gas pressure, target geometry and other processing parameters which affect the deposition pattern. Results from compositionally graded combinatorial library films of the ternary system Al 2 O 3 -HfO 2 -Y 2 O 3 are discussed

  13. Sub-monolayer Deposited InGaAs/GaAs Quantum Dot Heterostructures and Lasers

    DEFF Research Database (Denmark)

    Xu, Zhangcheng

    2004-01-01

    deposition, the deposition of a short-period InAs/GaAs superlattice on GaAs (100) surface with an InAs effective thickness of less than 1 monolayer (ML), results in the formatioin of nanometer scale (In,Ga)As QDs of a non-SK class.In this thesis, the SML InGaAs/GaAs QDs are formed by 10 cycles of alternate......The fabrication, characterization and exploitation of self-assembled quantum dot (QD) heterostructures have attracted much attention not only in basic research, but also by the promising device applications such as QD lasers. The Stranski-Krastanow (SK) growth and the submonolayer (SML) deposition...... deposition of 0.5 ML InAs and 2.5 MLGaAs. The growth, structure, and optical properties of SML InGaAs/GaAs QD heterostructures are investigated in detail. SML InGaAs/GaAs QD lasers lasing even at room temperature have been successfully realized. The gain properties of SML InGaAs QD lasers are studied...

  14. TiCN thin films grown by reactive crossed beam pulsed laser deposition

    Science.gov (United States)

    Escobar-Alarcón, L.; Camps, E.; Romero, S.; Muhl, S.; Camps, I.; Haro-Poniatowski, E.

    2010-12-01

    In this work, we used a crossed plasma configuration where the ablation of two different targets in a reactive atmosphere was performed to prepare nanocrystalline thin films of ternary compounds. In order to assess this alternative deposition configuration, titanium carbonitride (TiCN) thin films were deposited. Two crossed plasmas were produced by simultaneously ablating titanium and graphite targets in an Ar/N2 atmosphere. Films were deposited at room temperature onto Si (100) and AISI 4140 steel substrates whilst keeping the ablation conditions of the Ti target constant. By varying the laser fluence on the carbon target it was possible to study the effect of the carbon plasma on the characteristics of the deposited TiCN films. The structure and composition of the films were analyzed by X-ray Diffraction, Raman Spectroscopy and non-Rutherford Backscattering Spectroscopy. The hardness and elastic modulus of the films was also measured by nanoindentation. In general, the experimental results showed that the TiCN thin films were highly oriented in the (111) crystallographic direction with crystallite sizes as small as 6.0 nm. It was found that the hardness increased as the laser fluence was increased, reaching a maximum value of about 33 GPa and an elastic modulus of 244 GPa. With the proposed configuration, the carbon content could be easily varied from 42 to 5 at.% by changing the laser fluence on the carbon target.

  15. Modeling of thermal, electronic, hydrodynamic, and dynamic deposition processes for pulsed-laser deposition of thin films

    International Nuclear Information System (INIS)

    Liu, C.L.; LeBoeuf, J.N.; Wood, R.F.; Geohegan, D.B.; Donato, J.M.; Chen, K.R.; Puretzky, A.A.

    1994-11-01

    Various physical processes during laser ablation of solids for pulsed-laser deposition (PLD) are studied using a variety of computational techniques. In the course of the authors combined theoretical and experimental effort, they have been trying to work on as many aspects of PLD processes as possible, but with special focus on the following areas: (a) the effects of collisional interactions between the particles in the plume and in the background on the evolving flow field and on thin film growth, (b) interactions between the energetic particles and the growing thin films and their effects on film quality, (c) rapid phase transformations through the liquid and vapor phases under possibly nonequilibrium thermodynamic conditions induced by laser-solid interactions, (d) breakdown of the vapor into a plasma in the early stages of ablation through both electronic and photoionization processes, (c) hydrodynamic behavior of the vapor/plasma during and after ablation. The computational techniques used include finite difference (FD) methods, particle-in-cell model, and atomistic simulations using molecular dynamics (MD) techniques

  16. Parametric study of development of Inconel-steel functionally graded materials by laser direct metal deposition

    International Nuclear Information System (INIS)

    Shah, Kamran; Haq, Izhar ul; Khan, Ashfaq; Shah, Shaukat Ali; Khan, Mushtaq; Pinkerton, Andrew J

    2014-01-01

    Highlights: • Functionally graded steel and nickel super-alloy structures have been developed. • Mechanical properties of FGMs can be controlled by process input parameters. • SDAS is strongly dependent on the laser power and powder mass flow rate. • Carbides provide a mechanism to control the hardness and wear resistance of FGM. • Tensile strength of FGM is dependent on the laser power and powder mass flow rate. - Abstract: Laser direct metal deposition (LDMD) has developed from a prototyping to a single and multiple metals manufacturing technique. It offers an opportunity to produce graded components, with differing elemental composition, phase and microstructure at different locations. In this work, continuously graded Stainless Steel 316L and Inconel 718 thin wall structures made by direct laser metal deposition process have been explored. The paper considers the effects of process parameters including laser power levels and powder mass flow rates of SS316L and Inconel 718 during the deposition of the Steel–Ni graded structures. Microstructure characterisation and phase identification are performed by optical microscopy and X-ray diffraction techniques. Mechanical testing, using methods such as hardness, wear resistance and tensile testing have been carried out on the structures. XRD results show the presence of the NbC and Fe 2 Nb phases formed during the deposition. The effect of experimental parameters on the microstructure and physical properties are determined and discussed. Work shows that mechanical properties can be controlled by input parameters and generation of carbides provides an opportunity to selectively control the hardness and wear resistance of the functionally graded material

  17. Synthesis and characterization of titanium dioxide thin films deposited by laser ablation

    International Nuclear Information System (INIS)

    Escobar A, L.; Camps C, E.; Falcon B, T.; Carapia M, L.; Haro P, E.; Camacho L, M.A.

    2000-01-01

    In this work are presented the results obtained when TiO 2 thin films were deposited using the laser ablation technique. Thin films were deposited at different substrate temperatures, and different oxygen pressures, with the purpose of studying the influence of this deposit parameters in the structural characteristics of the films obtained. The structural characterization was realized through Raman Spectroscopy and X-ray Diffraction (XRD), the surface morphology of the layers deposited was verified by Scanning Electron Microscopy (Sem). The results show that the films obtained are of TiO 2 in rutile phase, getting this at low substrate temperatures, its morphology shows a soft surface with some spattered particles and good adherence. (Author)

  18. Fabrication of thin film CZTS solar cells with Pulsed Laser Deposition

    DEFF Research Database (Denmark)

    Cazzaniga, Andrea Carlo

    behind the Quantum Efficiency (QE) curve. What do I learn by reading this thesis? You will learn how to deposit a thin film CZTS absorber layer with Pulsed Laser Deposition with the desired composition. In addition, you will see how material transfer in PLD, which is generally believed...... to be stoichiometric, can be very much non-stoichiometric. How to do it? I suggest to do PLD on a single sintered target (2CuS:ZnS:SnS) .The films are deposited at room temperature and then annealed in a furnace with some sulfur powder aside. The annealing step is as important as the PLD step to the final device...... the non-equilibrium properties of PLD for the production of CZTS films. This may enable one to deposit crystalline CZTS at lower substrate temperature, with no requirement for an annealing step afterwards. Preliminary results do not seem too encouraging. The main obstacle to this approach may...

  19. Nanostructured Diamond-Like Carbon Films Grown by Off-Axis Pulsed Laser Deposition

    Directory of Open Access Journals (Sweden)

    Seong Shan Yap

    2015-01-01

    Full Text Available Nanostructured diamond-like carbon (DLC films instead of the ultrasmooth film were obtained by pulsed laser ablation of pyrolytic graphite. Deposition was performed at room temperature in vacuum with substrates placed at off-axis position. The configuration utilized high density plasma plume arriving at low effective angle for the formation of nanostructured DLC. Nanostructures with maximum size of 50 nm were deposited as compared to the ultrasmooth DLC films obtained in a conventional deposition. The Raman spectra of the films confirmed that the films were diamond-like/amorphous in nature. Although grown at an angle, ion energy of >35 eV was obtained at the off-axis position. This was proposed to be responsible for subplantation growth of sp3 hybridized carbon. The condensation of energetic clusters and oblique angle deposition correspondingly gave rise to the formation of nanostructured DLC in this study.

  20. Microstructural control during direct laser deposition of a β-titanium alloy

    International Nuclear Information System (INIS)

    Qiu, Chunlei; Ravi, G.A.; Attallah, Moataz M.

    2015-01-01

    Graphical abstract: Microstructural development of Ti5553 during Direct Laser Deposition (DLD). - Highlights: • Good structural and geometrical integrity could be achieved by process design. • Build height increases with decreased scanning speed and increased powder flow rate. • Keeping Z increment close to actual layer thickness is crucial for consistent building. • The laser deposited Ti5553 are dominated by mixed columnar and equiaxed grains. • In situ dwelling and annealing promote α precipitation which improves microhardness. - Abstract: A concern associated with Direct Laser Deposition (DLD) is the difficulty in controlling microstructure due to rapid cooling rates after deposition, particularly in beta-Ti alloys. In these alloys, the beta-phase is likely to exist following DLD, instead of the desirable duplex alpha + beta microstructure that gives a good balance of properties. Thus, in this work, a parametric study was performed to assess the role of DLD parameters on porosity, build geometry, and microstructure in a beta-Ti alloy, Ti–5Al–5Mo–5V–3Cr (Ti5553). The builds were examined using optical microscopy, scanning electron microscopy, and X-ray diffraction. Microhardness measurements were performed to assess the degree of re-precipitation of alpha-phase following an in situ dwelling and laser annealing procedure. The study identified several processing conditions that enable deposition of samples with the desired geometry and low porosity level. The microstructure was dominated by beta-phase, except for the region near the substrate where a limited amount of alpha-precipitates was present due to reheating effect. Although the microstructure was a mixture of equiaxed and columnar beta-grains alongside infrequent fine alpha-precipitates, the builds showed fairly uniform microhardness in different regions. In situ dwelling and annealing did not cause an obvious change in porosity, but did promote the formation of alpha-precipitates

  1. Structure and Morphology Effects on the Optical Properties of Bimetallic Nanoparticle Films Laser Deposited on a Glass Substrate

    Directory of Open Access Journals (Sweden)

    A. O. Kucherik

    2017-01-01

    Full Text Available Moving nanosecond laser system is used for laser-assisted thermodiffusion deposition of metallic nanoparticles from water-based colloidal solutions. The results obtained for both gold and silver nanoparticles show that film morphology strongly depends on laser scanning speed and the number of passages. We show, furthermore, the possibility of producing bimetallic Au:Ag thin films by laser irradiation of the mixed solutions. As a result of several laser scans, granular nanometric films are found to grow with a well-controlled composition, thickness, and morphology. By changing laser scanning parameters, film morphology can be varied from island structures to quasi-periodic arrays. The optical properties of the deposited structures are found to depend on the film composition, thickness, and mean separation between the particles. The transparency spectra of the deposited films are shown to be defined by their morphology.

  2. Microdroplet deposition through a film-free laser forward printing technique

    Energy Technology Data Exchange (ETDEWEB)

    Patrascioiu, A.; Fernandez-Pradas, J.M.; Morenza, J.L. [Departament de Fisica Aplicada i Optica, Universitat de Barcelona, Marti i Franques 1, 08028 Barcelona (Spain); Serra, P., E-mail: pserra@ub.edu [Departament de Fisica Aplicada i Optica, Universitat de Barcelona, Marti i Franques 1, 08028 Barcelona (Spain)

    2012-09-15

    Highlights: Black-Right-Pointing-Pointer Circular droplets are obtained for a wide range of focusing depths at fixed energy. Black-Right-Pointing-Pointer Focusing depth variation study reveals two abrupt transitions in droplet diameter. Black-Right-Pointing-Pointer Liquid ejection mechanism is mediated by two types of jets of different origin. Black-Right-Pointing-Pointer Evolution of jets depends on the focusing depth accounting for the seen transitions. - Abstract: A recently developed film-free laser forward microprinting technique allows printing transparent and weakly absorbing liquids with high resolution and reproducibility. Its operating principle consists in the tight focusing of ultrashort laser pulses inside the liquid, and near its free surface, such that all the laser energy is absorbed in a small region around the beam waist. A cavitation bubble is then created inside the liquid, whose subsequent expansion results into the ejection of liquid. The collection of the ejected liquid on a substrate leads to the deposition of micron-sized droplets. In this work, we investigate a relevant process parameter of the technique, namely the laser focusing depth, and its influence on the morphology of the deposited droplets. The study reveals that for a fixed laser pulse energy there exists a relatively wide range of focusing depths at which circular and uniform droplets can be printed. The process of liquid ejection is also investigated. Time-resolved images reveal that liquid ejection proceeds through the formation of two kinds of jets which display clearly differentiated dynamics, and which could provide an interpretation for the dependence observed between the morphology of the deposited droplets and the laser focusing depth.

  3. Microdroplet deposition through a film-free laser forward printing technique

    International Nuclear Information System (INIS)

    Patrascioiu, A.; Fernández-Pradas, J.M.; Morenza, J.L.; Serra, P.

    2012-01-01

    Highlights: ► Circular droplets are obtained for a wide range of focusing depths at fixed energy. ► Focusing depth variation study reveals two abrupt transitions in droplet diameter. ► Liquid ejection mechanism is mediated by two types of jets of different origin. ► Evolution of jets depends on the focusing depth accounting for the seen transitions. - Abstract: A recently developed film-free laser forward microprinting technique allows printing transparent and weakly absorbing liquids with high resolution and reproducibility. Its operating principle consists in the tight focusing of ultrashort laser pulses inside the liquid, and near its free surface, such that all the laser energy is absorbed in a small region around the beam waist. A cavitation bubble is then created inside the liquid, whose subsequent expansion results into the ejection of liquid. The collection of the ejected liquid on a substrate leads to the deposition of micron-sized droplets. In this work, we investigate a relevant process parameter of the technique, namely the laser focusing depth, and its influence on the morphology of the deposited droplets. The study reveals that for a fixed laser pulse energy there exists a relatively wide range of focusing depths at which circular and uniform droplets can be printed. The process of liquid ejection is also investigated. Time-resolved images reveal that liquid ejection proceeds through the formation of two kinds of jets which display clearly differentiated dynamics, and which could provide an interpretation for the dependence observed between the morphology of the deposited droplets and the laser focusing depth.

  4. Effect of laser beam parameters on magnetic properties of Nd-Fe-B thick-film magnets fabricated by pulsed laser deposition

    International Nuclear Information System (INIS)

    Fukunaga, H.; Nakano, M.; Yanai, T.; Kamikawatoko, T.; Yamashita, F.

    2011-01-01

    The effects of varying the laser power and the spot diameter of a laser beam on the magnetic properties, morphology, and deposition rate of Nd-Fe-B thick-film magnets fabricated by pulsed laser deposition (PLD) were investigated. Reducing the laser fluence on the target reduces the remanence and increases the Nd content and consequently the coercivity of the prepared films. The spot size of the laser beam was found to affect the film surface morphology, the deposition rate, and the reproducibility of the magnetic properties of the prepared films. Reducing the spot size reduces the number of droplets and the reproducibility of the magnetic properties and increases the droplet size. Controlling the spot size of the laser beam enabled us to maximize the deposition rate. Consequently, a coercivity of 1210 kA/m and a remanence of 0.51 T were obtained at a deposition rate of 11.8 μm/(h·W). This deposition rate is 30% greater than the highest previously reported deposition rate by PLD.

  5. Characteristics of tungsten oxide thin films prepared on the flexible substrates using pulsed laser deposition

    International Nuclear Information System (INIS)

    Suda, Yoshiaki; Kawasaki, Hiroharu; Ohshima, Tamiko; Yagyuu, Yoshihito

    2008-01-01

    Tungsten trioxide (WO 3 ) thin films have been prepared on the flexible indium tin oxide (ITO) substrates by pulsed laser deposition (PLD) using WO 3 targets in oxygen gas. Color of the WO 3 film on the flexible ITO substrates depends on the oxygen gas mixture. The plasma plume produced by PLD using a Nd:YAG laser and WO 3 target is investigated by temporal and spatial-resolved optical emission spectroscopy. WO 3 films prepared on the flexible ITO substrates show electrochromic properties, even when the substrates are bent. The film color changes from blue to transparent within 10-20 s after the applied DC voltage is turned off

  6. Application of 1013 ohm Faraday cup current amplifiers for boron isotopic analyses by solution mode and laser ablation multicollector inductively coupled plasma mass spectrometry.

    Science.gov (United States)

    Lloyd, Nicholas S; Sadekov, Aleksey Yu; Misra, Sambuddha

    2018-01-15

    Boron isotope ratios (δ 11 B values) are used as a proxy for seawater paleo-pH, amongst several other applications. The analytical precision can be limited by the detection of low intensity ion beams from limited sample amounts. High-gain amplifiers offer improvements in signal/noise ratio and can be used to increase measurement precision and reduce sample amounts. 10 13 ohm amplifier technology has previously been applied to several radiogenic systems, but has thus far not been applied to non-traditional stable isotopes. Here we apply 10 13 ohm amplifier technology for the measurement of boron isotope ratios using solution mode MC-ICP-MS and laser ablation mode (LA-)MC-ICP-MS techniques. Precision is shown for reference materials as well as for low-volume foraminifera samples. The baseline uncertainty for a 0.1 pA 10 B + ion beam is reduced to ohm amplifier technology is demonstrated to offer advantages for the determination of δ 11 B values by both MC-ICP-MS and LA-MC-ICP-MS for small samples of biogenic carbonates, such as foraminifera shells. 10 13 ohm amplifier technology will also be of benefit to other non-traditional stable isotope measurements. Copyright © 2017 John Wiley & Sons, Ltd.

  7. Porous nanostructured ZnO films deposited by picosecond laser ablation

    International Nuclear Information System (INIS)

    Sima, Cornelia; Grigoriu, Constantin; Besleaga, Cristina; Mitran, Tudor; Ion, Lucian; Antohe, Stefan

    2012-01-01

    Highlights: ► We deposite porous nanostructured ZnO films by picoseconds laser ablation (PLA). ► We examine changes of the films structure on the experimental parameter deposition. ► We demonstrate PLA capability to produce ZnO nanostructured films free of particulates. - Abstract: Porous nanostructured polycrystalline ZnO films, free of large particulates, were deposited by picosecond laser ablation. Using a Zn target, zinc oxide films were deposited on indium tin oxide (ITO) substrates using a picosecond Nd:YVO 4 laser (8 ps, 50 kHz, 532 nm, 0.17 J/cm 2 ) in an oxygen atmosphere at room temperature (RT). The morpho-structural characteristics of ZnO films deposited at different oxygen pressures (150–900 mTorr) and gas flow rates (0.25 and 10 sccm) were studied. The post-deposition influence of annealing (250–550 °C) in oxygen on the film characteristics was also investigated. At RT, a mixture of Zn and ZnO formed. At substrate temperatures above 350 °C, the films were completely oxidized, containing a ZnO wurtzite phase with crystallite sizes of 12.2–40.1 nm. At pressures of up to 450 mTorr, the porous films consisted of well-distinguished primary nanoparticles with average sizes of 45–58 nm, while at higher pressures, larger clusters (3.1–14.7 μm) were dominant, leading to thicker films; higher flow rates favored clustering.

  8. Deposition of Methylammonium Lead Triiodide by Resonant Infrared Matrix-Assisted Pulsed Laser Evaporation

    Science.gov (United States)

    Barraza, E. Tomas; Dunlap-Shohl, Wiley A.; Mitzi, David B.; Stiff-Roberts, Adrienne D.

    2018-02-01

    Resonant infrared matrix-assisted pulsed laser evaporation (RIR-MAPLE) was used to deposit the metal-halide perovskite (MHP) CH3NH3PbI3 (methylammonium lead triiodide, or MAPbI), creating phase-pure films. Given the moisture sensitivity of these crystalline, multi-component organic-inorganic hybrid materials, deposition of MAPbI by RIR-MAPLE required a departure from the use of water-based emulsions as deposition targets. Different chemistries were explored to create targets that properly dissolved MAPbI components, were stable under vacuum conditions, and enabled resonant laser energy absorption. Secondary phases and solvent contamination in the resulting films were studied through Fourier transform infrared (FTIR) absorbance and x-ray diffraction (XRD) measurements, suggesting that lingering excess methylammonium iodide (MAI) and low-vapor pressure solvents can distort the microstructure, creating crystalline and amorphous non-perovskite phases. Thermal annealing of films deposited by RIR-MAPLE allowed for excess solvent to be evaporated from films without degrading the MAPbI structure. Further, it was demonstrated that RIR-MAPLE does not require excess MAI to create stoichiometric films with optoelectronic properties, crystal structure, and film morphology comparable to films created using more established spin-coating methods for processing MHPs. This work marks the first time a MAPLE-related technique was used to deposit MHPs.

  9. Bioactive glass and hydroxyapatite thin films obtained by pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Gyorgy, E. [National Institute for Lasers, Plasma and Radiation Physics, P.O. Box MG 36, 77125 Bucharest (Romania) and Consejo Superior de Investigaciones Cientificas, Instituto de Ciencia de Materiales de Barcelona, Campus UAB, 08193 Bellaterra (Spain)]. E-mail: egyorgy@icmab.es; Grigorescu, S. [National Institute for Lasers, Plasma and Radiation Physics, P.O. Box MG 36, 77125 Bucharest (Romania); Socol, G. [National Institute for Lasers, Plasma and Radiation Physics, P.O. Box MG 36, 77125 Bucharest (Romania); Mihailescu, I.N. [National Institute for Lasers, Plasma and Radiation Physics, P.O. Box MG 36, 77125 Bucharest (Romania); Janackovic, D. [Faculty of Technology and Metallurgy, University of Belgrade, Karnegijeva 4, 11000 Belgrade (Serbia); Dindune, A. [Institute of Inorganic Chemistry of the Riga Technical University (Latvia); Plasma and Ceramic Technologies Ltd. (PCT Ltd.) (Latvia); Kanepe, Z. [Institute of Inorganic Chemistry of the Riga Technical University (Latvia); Plasma and Ceramic Technologies Ltd. (PCT Ltd.) (Latvia); Palcevskis, E. [Plasma and Ceramic Technologies Ltd. (PCT Ltd.) (Latvia); Zdrentu, E.L. [Institute of Biochemistry, Splaiul Independentei 296, Bucharest (Romania); Petrescu, S.M. [Institute of Biochemistry, Splaiul Independentei 296, Bucharest (Romania)

    2007-07-31

    Bioactive glass (BG), calcium hydroxyapatite (HA), and ZrO{sub 2} doped HA thin films were grown by pulsed laser deposition on Ti substrates. An UV KrF{sup *} ({lambda} = 248 nm, {tau} {>=} 7 ns) excimer laser was used for the multi-pulse irradiation of the targets. The substrates were kept at room temperature or heated during the film deposition at values within the (400-550 deg. C) range. The depositions were performed in oxygen and water vapor atmospheres, at pressure values in the range (5-40 Pa). The HA coatings were heat post-treated for 6 h in a flux of hot water vapors at the same temperature as applied during deposition. The surface morphology, chemical composition, and crystalline quality of the obtained thin films were studied by scanning electron microscopy, atomic force microscopy, and X-ray diffractometry. The films were seeded for in vitro tests with Hek293 (human embryonic kidney) cells that revealed a good adherence on the deposited layers. Biocompatibility tests showed that cell growth was better on HA than on BG thin films.

  10. Hydrogen absorption in thin ZnO films prepared by pulsed laser deposition

    OpenAIRE

    Meilkhova, O.; Čížek, J.; Lukáč,, F.; Vlček, M.; Novotný, M.; Bulíř, J.; Lančok, J.; Anwand, W.; Brauer, G.; Connolly, J.; McCarthy, E.; Krishnamurthy, S.; Mosnier, J.-P.

    2013-01-01

    ZnO films with thickness of ~80 nm were grown by pulsed laser deposition (PLD) on MgO (1 0 0) single crystal and amorphous fused silica (FS) substrates. Structural studies of ZnO films and a high quality reference ZnO single crystal were performed by slow positron implantation spectroscopy (SPIS). It was found that ZnO films exhibit significantly higher density of defects than the reference ZnO crystal. Moreover, the ZnO film deposited on MgO substrate exhibits higher concentration of defects...

  11. Laser deposition of SmCo thin film and coating on different substrates

    International Nuclear Information System (INIS)

    Allocca, L; Bonavolonta, C; Valentino, M; Giardini, A; Lopizzo, T; Morone, A; Verrastro, M F; Viggiano, V

    2008-01-01

    Thin films and coatings of permanent magnetic materials are very important for different electronic and micromechanical applications. This paper deals with the fabrication, using pulsed laser deposition (PLD) technique, of good quality magnetic SmCo thin films on polycarbonate, steel, silicon and amorphous quartz substrates, for low cost electronic applications like radio frequency identification (RFID) antennas and electromechanical devices for fuel feeding control in the automotive. X-ray fluorescence and magnetic scanning measurements using giant magneto-resistive (GMR) sensors have been performed to study the functional magnetic properties of the deposited thin films.

  12. Epitaxial growth of atomically flat gadolinia-doped ceria thin films by pulsed laser deposition

    DEFF Research Database (Denmark)

    Chen, Yunzhong; Pryds, Nini; Schou, Jørgen

    2011-01-01

    Epitaxial growth of Ce0.8Gd0.2O2(CGO) films on (001) TiO2-terminated SrTiO3 substrates by pulsed laser deposition was investigated using in situ reflective high energy electron diffraction. The initial film growth shows a Stransky–Krastanov growth mode. However, this three-dimensional island...... formation is replaced by a two-dimensional island nucleation during further deposition, which results in atomically smooth CGO films. The obtained high-quality CGO films may be attractive for the electrolyte of solid-oxide fuel cells operating at low temperature....

  13. Pulsed laser deposition of SiC thin films at medium substrate temperatures

    International Nuclear Information System (INIS)

    Katharria, Y.S.; Kumar, Sandeep; Choudhary, R.J.; Prakash, Ram; Singh, F.; Lalla, N.P.; Phase, D.M.; Kanjilal, D.

    2008-01-01

    Systematic studies of thin silicon carbide (SiC) films deposited on Si (100) substrates using pulsed laser deposition technique at room temperature, 370 deg. C and 480 deg. C are carried out. X-ray photoelectron spectroscopy showed the formation of SiC bonds in the films at these temperatures along with some graphitic carbon clusters. Fourier transform infrared analysis also confirmed the formation of SiC nanocrystallites in the films. Transmission electron microscopy and electron diffraction were used to study the structural properties of nanocrystallites formed in the films. Surface morphological analysis using atomic force microscopy revealed the growth of smooth films

  14. Structural characterization of ZnO thin films grown on various substrates by pulsed laser deposition

    International Nuclear Information System (INIS)

    Novotný, M; Bulíř, J; Lančok, J; Čížek, J; Kužel, R; Connolly, J; McCarthy, E; Krishnamurthy, S; Mosnier, J-P; Anwand, W; Brauer, G

    2012-01-01

    ZnO thin films were grown by pulsed laser deposition on three different substrates: sapphire (0 0 0 1), MgO (1 0 0) and fused silica (FS). The structure and morphology of the films were characterized by x-ray diffraction and scanning electron microscopy and defect studies were carried out using slow positron implantation spectroscopy (SPIS). Films deposited on all substrates studied in this work exhibit the wurtzite ZnO structure and are characterized by an average crystallite size of 20-100 nm. However, strong differences in the microstructure of films deposited on various substrates were found. The ZnO films deposited on MgO and sapphire single-crystalline substrates exhibit local epitaxy, i.e. a well-defined relation between film crystallites and the substrate. Domains with different orientation relationships with the substrate were found in both films. On the other hand, the film deposited on the FS substrate exhibits fibre texture with random lateral orientation of crystallites. Extremely high compressive in-plane stress of σ ∼ 14 GPa was determined in the film deposited on the MgO substrate, while the film deposited on sapphire is virtually stress-free, and the film deposited on the FS substrate exhibits a tensile in-plane stress of σ ∼ 0.9 GPa. SPIS investigations revealed that the concentration of open-volume defects in the ZnO films is substantially higher than that in a bulk ZnO single crystal. Moreover, the ZnO films deposited on MgO and sapphire single-crystalline substrates exhibit a significantly higher density of defects than the film deposited on the amorphous FS substrate. (paper)

  15. Chemical, mechanical, and tribological properties of pulsed-laser-deposited titanium carbide and vanadium carbide

    International Nuclear Information System (INIS)

    Krzanowski, J.E.; Leuchtner, R.E.

    1997-01-01

    The chemical, mechanical, and tribological properties of pulsed-laser-deposited TiC and VC films are reported in this paper. Films were deposited by ablating carbide targets using a KrF (λ = 248 nm) laser. Chemical analysis of the films by XPS revealed oxygen was the major impurity; the lowest oxygen concentration obtained in a film was 5 atom%. Oxygen was located primarily on the carbon sublattice of the TiC structure. The films were always substoichiometric, as expected, and the carbon in the films was identified primarily as carbidic carbon. Nanoindentation hardness tests gave values of 39 GPa for TiC and 26 GPa for VC. The friction coefficient for the TiC films was 0.22, while the VC film exhibited rapid material transfer from the steel ball to the substrate resulting in steel-on-steel tribological behavior

  16. 2D modeling of direct laser metal deposition process using a finite particle method

    Science.gov (United States)

    Anedaf, T.; Abbès, B.; Abbès, F.; Li, Y. M.

    2018-05-01

    Direct laser metal deposition is one of the material additive manufacturing processes used to produce complex metallic parts. A thorough understanding of the underlying physical phenomena is required to obtain a high-quality parts. In this work, a mathematical model is presented to simulate the coaxial laser direct deposition process tacking into account of mass addition, heat transfer, and fluid flow with free surface and melting. The fluid flow in the melt pool together with mass and energy balances are solved using the Computational Fluid Dynamics (CFD) software NOGRID-points, based on the meshless Finite Pointset Method (FPM). The basis of the computations is a point cloud, which represents the continuum fluid domain. Each finite point carries all fluid information (density, velocity, pressure and temperature). The dynamic shape of the molten zone is explicitly described by the point cloud. The proposed model is used to simulate a single layer cladding.

  17. Modified Stranski-Krastanov growth in Ge/Si heterostructures via nanostenciled pulsed laser deposition.

    Science.gov (United States)

    MacLeod, J M; Cojocaru, C V; Ratto, F; Harnagea, C; Bernardi, A; Alonso, M I; Rosei, F

    2012-02-17

    The combination of nanostenciling with pulsed laser deposition (PLD) provides a flexible, fast approach for patterning the growth of Ge on Si. Within each stencilled site, the morphological evolution of the Ge structures with deposition follows a modified Stranski-Krastanov (SK) growth mode. By systematically varying the PLD parameters (laser repetition rate and number of pulses) on two different substrate orientations (111 and 100), we have observed corresponding changes in growth morphology, strain and elemental composition using scanning electron microscopy, atomic force microscopy and μ-Raman spectroscopy. The growth behaviour is well predicted within a classical SK scheme, although the Si(100) growth exhibits significant relaxation and ripening with increasing coverage. Other novel aspects of the growth include the increased thickness of the wetting layer and the kinetic control of Si/Ge intermixing via the PLD repetition rate.

  18. Effects of oxygen gas pressure on properties of iron oxide films grown by pulsed laser deposition

    International Nuclear Information System (INIS)

    Guo, Qixin; Shi, Wangzhou; Liu, Feng; Arita, Makoto; Ikoma, Yoshifumi; Saito, Katsuhiko; Tanaka, Tooru; Nishio, Mitsuhiro

    2013-01-01

    Highlights: ► Pulsed laser deposition is a promising technique for growing iron oxide films. ► Crystal structure of the iron oxide films strongly depends on oxygen gas pressure. ► Optimum of the oxygen gas pressure leads single phase magnetite films with high crystal quality. -- Abstract: Iron oxide films were grown on sapphire substrates by pulsed laser deposition at oxygen gas pressures between 1 × 10 −5 and 1 × 10 −1 Pa with a substrate temperature of 600 °C. Atomic force microscope, X-ray diffraction, Raman spectroscopy, X-ray absorption fine structure, and vibrational sample magnetometer analysis revealed that surface morphology and crystal structure of the iron oxide films strongly depend on the oxygen gas pressure during the growth and the optimum oxygen gas pressure range is very narrow around 1 × 10 −3 Pa for obtaining single phase magnetite films with high crystal quality

  19. Pulsed laser deposition of antimicrobial silver coating on Ormocer (registered) microneedles

    Energy Technology Data Exchange (ETDEWEB)

    Gittard, S D; Narayan, R J; Jin, C; Monteiro-Riviere, N A [Joint Department of Biomedical Engineering, North Carolina State University, Raleigh, NC 27695 (United States); Ovsianikov, A; Chichkov, B N [Laser Zentrum Hannover, Hollerithallee 8, 30419 Hannover (Germany); Stafslien, S; Chisholm, B, E-mail: roger_narayan@msn.co [Center for Nanoscale Science and Engineering, North Dakota State University, 1805 Research Park Drive, Fargo, ND 58102 (United States)

    2009-12-15

    One promising option for transdermal delivery of protein- and nucleic acid-based pharmacologic agents involves the use of microneedles. However, microneedle-generated pores may allow microorganisms to penetrate the stratum corneum layer of the epidermis and cause local or systemic infection. In this study, microneedles with antimicrobial functionality were fabricated using two-photon polymerization-micromolding and pulsed laser deposition. The antibacterial activity of the silver-coated organically modified ceramic (Ormocer (registered) ) microneedles was demonstrated using an agar diffusion assay. Human epidermal keratinocyte viability on the Ormocer (registered) surfaces coated with silver was similar to that on uncoated Ormocer (registered) surfaces. This study indicates that coating microneedles with silver thin films using pulsed laser deposition is a useful and novel approach for creating microneedles with antimicrobial functionality. (communication)

  20. Ultrashort Pulsed Laser Ablation of Magnesium Diboride: Plasma Characterization and Thin Films Deposition

    Directory of Open Access Journals (Sweden)

    Angela De Bonis

    2015-01-01

    Full Text Available A MgB2 target has been ablated by Nd:glass laser with a pulse duration of 250 fs. The plasma produced by the laser-target interaction, showing two temporal separated emissions, has been characterized by time and space resolved optical emission spectroscopy and ICCD fast imaging. The films, deposited on silicon substrates and formed by the coalescence of particles with nanometric size, have been analyzed by scanning electron microscopy, atomic force microscopy, X-ray photoelectron spectroscopy, micro-Raman spectroscopy, and X-ray diffraction. The first steps of the films growth have been studied by Transmission Electron Microscopy. The films deposition has been studied by varying the substrate temperature from 25 to 500°C and the best results have been obtained at room temperature.

  1. Room temperature pulsed laser deposition of Si{sub x} C thin films in different compositions

    Energy Technology Data Exchange (ETDEWEB)

    Hanyecz, I.; Budai, J. [University of Szeged, Department of Optics and Quantum Electronics, P.O. Box 406, Szeged (Hungary); Oszko, A. [University of Szeged, Department of Solid State and Radiochemistry, P.O. Box 168, Szeged (Hungary); Szilagyi, E. [KFKI Research Institute for Particle and Nuclear Physics, P.O. Box 49, Budapest (Hungary); Toth, Z. [Research Group on Laser Physics of the Hungarian Academy of Sciences, P.O. Box 406, Szeged (Hungary)

    2010-09-15

    Amorphous silicon-carbon alloy films in different compositions were prepared by pulsed laser deposition from two-component targets containing pure silicon and carbon parts. The silicon-carbon ratio in the films was varied by adjusting the number of laser shots on the constituent silicon and carbon targets. The composition, optical properties, thickness, and bonding structure of the films were determined by backscattering spectrometry, spectroscopic ellipsometry, and X-ray photoelectron spectroscopy, respectively. Backscattering spectrometry data were used to determine the deposition rate of silicon and carbon. This enabled the calculation of the number of the shots onto each target to reach a predefined composition. As the film composition changed from carbon to silicon, it was shown that the microscopic and macroscopic properties of the films also changed from a diamond-like carbon phase to an amorphous silicon phase via graphite- and silicon-carbide-like composite. (orig.)

  2. Pulsed Laser deposition of Al2O3 thin film on silicon

    International Nuclear Information System (INIS)

    Lamagna, A.; Duhalde, S.; Correra, L.; Nicoletti, S.

    1998-01-01

    Al 2 O 3 thin films were fabricated by pulsed laser deposition (PLD) on Si 3 N 4 /Si, to improve the thermal and electrical isolation of gas sensing devices. The microstructure of the films is analysed as a function of the deposition conditions (laser fluence, oxygen pressure, target-substrate distance and substrate temperature). X-ray analysis shows that only a sharp peak that coincides with the corundum (116) reflection can be observed in all the films. But, when they are annealed at temperatures above 1,200 degree centigrade, a change in the crystalline structure of some films occurs. The stoichiometry and morphology of the films with and without thermal treatment are compared using environmental scanning electron microscopy (SEM) and EDAX analysis. (Author) 14 refs

  3. Pulsed laser deposition of antimicrobial silver coating on Ormocer (registered) microneedles

    International Nuclear Information System (INIS)

    Gittard, S D; Narayan, R J; Jin, C; Monteiro-Riviere, N A; Ovsianikov, A; Chichkov, B N; Stafslien, S; Chisholm, B

    2009-01-01

    One promising option for transdermal delivery of protein- and nucleic acid-based pharmacologic agents involves the use of microneedles. However, microneedle-generated pores may allow microorganisms to penetrate the stratum corneum layer of the epidermis and cause local or systemic infection. In this study, microneedles with antimicrobial functionality were fabricated using two-photon polymerization-micromolding and pulsed laser deposition. The antibacterial activity of the silver-coated organically modified ceramic (Ormocer (registered) ) microneedles was demonstrated using an agar diffusion assay. Human epidermal keratinocyte viability on the Ormocer (registered) surfaces coated with silver was similar to that on uncoated Ormocer (registered) surfaces. This study indicates that coating microneedles with silver thin films using pulsed laser deposition is a useful and novel approach for creating microneedles with antimicrobial functionality. (communication)

  4. High quality superconducting titanium nitride thin film growth using infrared pulsed laser deposition

    Science.gov (United States)

    Torgovkin, A.; Chaudhuri, S.; Ruhtinas, A.; Lahtinen, M.; Sajavaara, T.; Maasilta, I. J.

    2018-05-01

    Superconducting titanium nitride (TiN) thin films were deposited on magnesium oxide, sapphire and silicon nitride substrates at 700 °C, using a pulsed laser deposition (PLD) technique, where infrared (1064 nm) pulses from a solid-state laser were used for the ablation from a titanium target in a nitrogen atmosphere. Structural studies performed with x-ray diffraction showed the best epitaxial crystallinity for films deposited on MgO. In the best films, superconducting transition temperatures, T C, as high as 4.8 K were observed, higher than in most previous superconducting TiN thin films deposited with reactive sputtering. A room temperature resistivity down to ∼17 μΩ cm and residual resistivity ratio up to 3 were observed in the best films, approaching reported single crystal film values, demonstrating that PLD is a good alternative to reactive sputtering for superconducting TiN film deposition. For less than ideal samples, the suppression of the film properties were correlated mostly with the unintended incorporation of oxygen (5–10 at%) in the film, and for high oxygen content films, vacuum annealing was also shown to increase the T C. On the other hand, superconducting properties were surprisingly insensitive to the nitrogen content, with high quality films achieved even in the highly nitrogen rich, Ti:N = 40/60 limit. Measures to limit oxygen exposure during deposition must be taken to guarantee the best superconducting film properties, a fact that needs to be taken into account with other deposition methods, as well.

  5. Effect of deposition temperature on electron-beam evaporated polycrystalline silicon thin-film and crystallized by diode laser

    Energy Technology Data Exchange (ETDEWEB)

    Yun, J., E-mail: j.yun@unsw.edu.au; Varalmov, S.; Huang, J.; Green, M. A. [School of Photovoltaic and Renewable Energy Engineering, University of New South Wales, Sydney, New South Wales 2052 (Australia); Kim, K. [School of Photovoltaic and Renewable Energy Engineering, University of New South Wales, Sydney, New South Wales 2052 (Australia); Suntech R and D Australia, Botany, New South Wales 2019 (Australia)

    2014-06-16

    The effects of the deposition temperature on the microstructure, crystallographic orientation, and electrical properties of a 10-μm thick evaporated Si thin-film deposited on glass and crystallized using a diode laser, are investigated. The crystallization of the Si thin-film is initiated at a deposition temperature between 450 and 550 °C, and the predominant (110) orientation in the normal direction is found. Pole figure maps confirm that all films have a fiber texture and that it becomes stronger with increasing deposition temperature. Diode laser crystallization is performed, resulting in the formation of lateral grains along the laser scan direction. The laser power required to form lateral grains is higher in case of films deposited below 450 °C for all scan speeds. Pole figure maps show 75% occupancies of the (110) orientation in the normal direction when the laser crystallized film is deposited above 550 °C. A higher density of grain boundaries is obtained when the laser crystallized film is deposited below 450 °C, which limits the solar cell performance by n = 2 recombination, and a performance degradation is expected due to severe shunting.

  6. Pulsed-laser ablation of co-deposits on JT-60 graphite tile

    International Nuclear Information System (INIS)

    Sakawa, Youichi; Watanabe, Daisuke; Shibahara, Takahiro; Sugiyama, Kazuyoshi; Tanabe, Tetsuo

    2007-01-01

    Pulsed laser ablation of the co-deposits on a JT-60 open-divertor tile using the fourth harmonic of a 20 ps-Nd: YAG laser has been investigated. With increasing the laser intensity, three regions, non-ablation region (NAR), weak-ablation region (WAR), and strong-ablation region (SAR) were distinguished. Transition from NAR to WAR and WAR to SAR occurred at the threshold laser intensity for laser ablation and that for strong ionization of carbon atoms, respectively. The ablation accompanied desorption of H 2 and C 2 H 2 , with minor contribution of other hydrocarbons, while production of H 2 O was small. In NAR and WAR the number of the hydrogen desorbed by the laser irradiation was less than that of hydrogen retained in the ablated volume, while in SAR it was much larger, owing to thermal desorption of hydrogen gas from the region surrounding the ablated volume. For the ablative removal of hydrogen isotopes, SAR is more desirable because of higher removal efficiency and less production of hydrocarbons

  7. Pulsed-laser ablation of co-deposits on JT-60 graphite tile

    Energy Technology Data Exchange (ETDEWEB)

    Sakawa, Youichi [Institute of Laser Engineering, Osaka University, Yamadaoka, Suita, Osaka 565-0871 (Japan)]. E-mail: sakawa-y@ile.osaka-u.ac.jp; Watanabe, Daisuke [Graduate School of Engineering, Nagoya University, Chikusa-ku, Nagoya, Aichi 464-8603 (Japan); Shibahara, Takahiro [Graduate School of Engineering, Nagoya University, Chikusa-ku, Nagoya, Aichi 464-8603 (Japan); Sugiyama, Kazuyoshi [Interdisciplinary School of Engineering Science, Kyushu University, Fukuoka, Fukuoka 812-8581 (Japan); Tanabe, Tetsuo [Interdisciplinary School of Engineering Science, Kyushu University, Fukuoka, Fukuoka 812-8581 (Japan)

    2007-08-01

    Pulsed laser ablation of the co-deposits on a JT-60 open-divertor tile using the fourth harmonic of a 20 ps-Nd: YAG laser has been investigated. With increasing the laser intensity, three regions, non-ablation region (NAR), weak-ablation region (WAR), and strong-ablation region (SAR) were distinguished. Transition from NAR to WAR and WAR to SAR occurred at the threshold laser intensity for laser ablation and that for strong ionization of carbon atoms, respectively. The ablation accompanied desorption of H{sub 2} and C{sub 2}H{sub 2}, with minor contribution of other hydrocarbons, while production of H{sub 2}O was small. In NAR and WAR the number of the hydrogen desorbed by the laser irradiation was less than that of hydrogen retained in the ablated volume, while in SAR it was much larger, owing to thermal desorption of hydrogen gas from the region surrounding the ablated volume. For the ablative removal of hydrogen isotopes, SAR is more desirable because of higher removal efficiency and less production of hydrocarbons.

  8. Laser-induced chemical liquid deposition of discontinuous and continuous copper films

    Czech Academy of Sciences Publication Activity Database

    Ouchi, A.; Bastl, Zdeněk; Boháček, Jaroslav; Šubrt, Jan; Pola, Josef

    2007-01-01

    Roč. 201, č. 8 (2007), s. 4728-4733 ISSN 0257-8972 R&D Projects: GA AV ČR 1ET400400413 Institutional research plan: CEZ:AV0Z40400503; CEZ:AV0Z40320502; CEZ:AV0Z40720504 Keywords : copper films * laser photolysis * Cu(II) acetylacetonate * chemical liquid deposition Subject RIV: CF - Physical ; Theoretical Chemistry Impact factor: 1.678, year: 2007

  9. Direct metal laser deposition of titanium powder Ti-6Al-4V

    Science.gov (United States)

    Bykovskiy, D. P.; Petrovskiy, V. N.; Sergeev, K. L.; Osintsev, A. V.; Dzhumaev, P. S.; Polskiy, V. I.

    2017-12-01

    The paper presents the results of mechanical properties study of the material produced by direct metal laser deposition of VT6 titanium powder. The properties were determined by the results of stretching at tensile testing machine, as well as compared with the properties of the same rolled material. These results show that obtained samples have properties on the level or even higher than that ones of the samples obtained from the rolled material in a certain range of technological regimes.

  10. Silver-doped layers of implants prepared by pulsed laser deposition

    Czech Academy of Sciences Publication Activity Database

    Kocourek, Tomáš; Jelínek, Miroslav; Mikšovský, Jan; Jurek, Karel; Čejka, Z.; Kopeček, Jaromír

    2013-01-01

    Roč. 1, č. 7 (2013), s. 59-61 ISSN 2327-5219 R&D Projects: GA AV ČR KAN300100801 Institutional support: RVO:68378271 Keywords : thin layer * silver * titanium alloy * steel * pulsed laser deposition * adhesion * implant Subject RIV: BM - Solid Matter Physics ; Magnetism http://www.scirp.org/journal/PaperInformation.aspx?paperID=40308#.UvECAfu5dHA

  11. The study of metal-alloy targets and excimer laser deposition technology

    International Nuclear Information System (INIS)

    Xu Hua; Wu Weidong; Tang Xiaohong; Zhang Jicheng; Tang Yongjian

    2002-01-01

    Pulsed Laser Deposition (PLD) technology is described. Design and manufacture of the PLD installation is illustrated in detail. The Cu films and Cu/Fe multi-layers are produced by PLD method. The production of the Mg/Si films using magnetron sputtering method is investigated in detail. The percent of Si on Mg/Si film surface is measured by using conductivity method

  12. Reduction of deposition asymmetries in directly driven ion-beam and laser targets

    International Nuclear Information System (INIS)

    Mark, J.W.K.

    1985-01-01

    The authors have developed a procedure for reducing energy-dependent asymmetry in spherical targets driven directly by ion or laser beams. This work is part of a strategy for achieving illumination symmetry in such targets, which they propose as an alternative to those in the literature. This strategy allows an axially symmetric placement of beamlets, which would be convenient for some driver or reactor scenarios. It also allows the use of beam currents or energy fluxes to help reduce deposition asymmetry

  13. Solid Lubrication of Laser Deposited Carbon Nanotube Reinforced Nickel Matrix Nanocomposites Preprint

    Science.gov (United States)

    2009-03-01

    thickness 440C stainless steel (SS) and the deposited composites had a square geometry in order to assure a uniform laser heat distribution during the...tested against (a) 440C stainless steel counterface with Pmax=0.6 GPa and (b) Si3N4 counterface with Pmax=0.8 GPa. Fig. 4. (a) Pure Ni and (c...decrease in friction coefficients compared to pure Ni. 15. SUBJECT TERMS Tribology , friction, wear, solid lubricant, carbon nanotubes, metal

  14. UV Laser Deposition of Nanostructured Si/C/O/N/H Precursor to Silicon Oxycarbonitride

    Czech Academy of Sciences Publication Activity Database

    Pola, Josef; Galíková, Anna; Bastl, Zdeněk; Šubrt, Jan; Vacek, Karel; Brus, Jiří; Ouchi, A.

    2006-01-01

    Roč. 20, č. 10 (2006), s. 648-655 ISSN 0268-2605 R&D Projects: GA MŠk(CZ) ME 684 Institutional research plan: CEZ:AV0Z40720504; CEZ:AV0Z40320502; CEZ:AV0Z40400503; CEZ:AV0Z40500505 Keywords : laser photolysis * silicon oxycarbonitride * chemical vapor deposition Subject RIV: CA - Inorganic Chemistry Impact factor: 1.233, year: 2006

  15. HYDROXYAPATITE THIN FILMS ON TITANIUM DEPOSITED BY KrF LASER

    OpenAIRE

    QUANHE BAO; CHUANZHONG CHEN; DIANGANG WANG; YAFAN ZHAO; TINGQUAN LEI; JUNMING LIU

    2006-01-01

    Pulsed laser deposition (PLD) is being investigated as an alternative technique to prepare hydroxyapatite coatings. In this research we studied the microstructure and phase composition of the PLD hydroxyapatite films. The surface morphology of the films is composed of droplets for which size ranges from hundreds of nanometers to a few micrometers. The cross-sectional morphology of the films shows that the films adhere to the substrate well and there are no microcracks, pores and other defects...

  16. Hydrating behavior of Mg-based nano-layers prepared by pulsed laser deposition

    International Nuclear Information System (INIS)

    Wioniewski, Z; Bystrzycki, J; Mroz, W; Jastrzabski, C

    2009-01-01

    The hydriding behavior of Mg with TiO 2 and Si nanolayers prepared by the pulsed laser deposition (PLD) was studied. The phase structure, chemical composition and hydriding properties of the obtained Mg-based nanolayers were investigated by the XRD, TEM, AFM, RS, SIMS and the volumetric Sievert method. It was shown that PLD is an excellent technique for producing the complex structures based on Mg. Both, the kinetic and destabilization topics were investigated in this paper.

  17. ZnO thin films on single carbon fibres fabricated by Pulsed Laser Deposition (PLD)

    Energy Technology Data Exchange (ETDEWEB)

    Krämer, André; Engel, Sebastian [Otto Schott Institute of Materials Research (OSIM), Friedrich Schiller University Jena, Löbdergraben 32, 07743 Jena (Germany); Sangiorgi, Nicola [Institute of Science and Technology for Ceramics – National Research Council of Italy (CNR-ISTEC), via Granarolo 64, 48018 Faenza, RA (Italy); Department of Chemical Science and Technologies, University of Rome Tor Vergata, via della Ricerca Scientifica, 00133 Rome (Italy); Sanson, Alessandra [Institute of Science and Technology for Ceramics – National Research Council of Italy (CNR-ISTEC), via Granarolo 64, 48018 Faenza, RA (Italy); Bartolomé, Jose F. [Instituto de Ciencia de Materiales de Madrid (ICMM), Consejo Superior de Investigaciones Científicas (CSIC), C/Sor Juana Inés de la Cruz 3, 28049 Madrid (Spain); Gräf, Stephan, E-mail: stephan.graef@uni-jena.de [Otto Schott Institute of Materials Research (OSIM), Friedrich Schiller University Jena, Löbdergraben 32, 07743 Jena (Germany); Müller, Frank A. [Otto Schott Institute of Materials Research (OSIM), Friedrich Schiller University Jena, Löbdergraben 32, 07743 Jena (Germany); Center for Energy and Environmental Chemistry Jena (CEEC Jena), Friedrich Schiller University Jena, Philosophenweg 7a, 07743 Jena (Germany)

    2017-03-31

    Highlights: • Carbon fibres were entirely coated with thin films consisting of aligned ZnO crystals. • A Q-switched CO2 laser was utilised as radiation source. • Suitability of ZnO thin films on carbon fibres as photo anodes for DSSC was studied. - Abstract: Single carbon fibres were 360° coated with zinc oxide (ZnO) thin films by pulsed laser deposition using a Q-switched CO{sub 2} laser with a pulse duration τ ≈ 300 ns, a wavelength λ = 10.59 μm, a repetition frequency f{sub rep} = 800 Hz and a peak power P{sub peak} = 15 kW in combination with a 3-step-deposition technique. In a first set of experiments, the deposition process was optimised by investigating the crystallinity of ZnO films on silicon and polished stainless steel substrates. Here, the influence of the substrate temperature and of the oxygen partial pressure of the background gas were characterised by scanning electron microscopy and X-ray diffraction analyses. ZnO coated carbon fibres and conductive glass sheets were used to prepare photo anodes for dye-sensitised solar cells in order to investigate their suitability for energy conversion devices. To obtain a deeper insight of the electronic behaviour at the interface between ZnO and substrate I–V measurements were performed.

  18. Preparation, characterization and optical properties of Gadolinium doped ceria thin films by pulsed laser deposition technique

    International Nuclear Information System (INIS)

    Nagaraju, P.; Vijaya Kumar, Y.; Vishnuvardhan Reddy, C.; Ramana Reddy, M.V.; Phase, D.M; Raghavendra Reddy, V.

    2013-01-01

    The growth of Gadolinium doped ceria thin films with controlled surface structure for device quality applications presents a significant problem for experimental investigation. In the present study gadolinium doped cerium oxide thin films were prepared by pulsed laser deposition (PLD) and were studied for their surface structure evaluation in relation to the optimized operating conditions during the stage of film preparation. The deposition was made with gadolinium concentration of 10 mole% to ceria pellets. The films were deposited on quartz substrate in the presence of oxygen partial pressure of 1.5 x 10 -3 torr using KrF Excimer laser with laser energy 220 mJ at a substrate temperature 700℃. The effect of annealing temperature on 10 mole% GDC thin film was investigated. The film thickness was measured by using AMBIOS make XP-l stylus profiler. As prepared and annealed thin films were characterized for crystallinity, particle size and orientation by using G.I.XRD. The films were characterized using atomic force microscopy (AFM). The AFM results gave a consistent picture of the evolution of GDC film surface morphologies and microstructures in terms of surface roughness, grain distribution and mean grain size. The optical transmittance spectra was used to determine the optical constants such as optical band gap, refractive index, extinction coefficient of as prepared and annealed thin films. (author)

  19. Effect of laser power and scanning speed on laser deposited Ti6Al4V/TiB2 matrix composites

    CSIR Research Space (South Africa)

    Mokgalaka, MN

    2012-10-01

    Full Text Available Additive Manufacturing in Industry Conference, Kwa Maritane, Pilanesberg National Park, 31 October-2 November 2012 EFFECT OF LASER POWER AND SCANNING SPEED ON LASER DEPOSITED Ti6Al4V/TiB2 MATRIX COMPOSITES M.N. Mokgalaka2,1, S.L. Pityana1,2, A.P.I...

  20. Relationship between the Ca/P ratio of hydroxyapatite thin films and the spatial energy distribution of the ablation laser in pulsed laser deposition

    NARCIS (Netherlands)

    Nishikawa, H.; Hasegawa, T; Miyake, A.; Tashiro, Y.; Hashimoto, Y.; Blank, David H.A.; Rijnders, Augustinus J.H.M.

    2016-01-01

    Variation of the Ca/P ratio in hydroxyapatite (Ca10(PO4)6(OH)2) thin films was studied in relation to the spot size of the ablation laser for two different spatial energy distributions in pulsed laser deposition. One energy distribution is the defocus method with a raw distribution and the other is

  1. Organic/hybrid thin films deposited by matrix-assisted pulsed laser evaporation (MAPLE)

    Science.gov (United States)

    Stiff-Roberts, Adrienne D.; Ge, Wangyao

    2017-12-01

    Some of the most exciting materials research in the 21st century attempts to resolve the challenge of simulating, synthesizing, and characterizing new materials with unique properties designed from first principles. Achievements in such development for organic and organic-inorganic hybrid materials make them important options for electronic and/or photonic devices because they can impart multi-functionality, flexibility, transparency, and sustainability to emerging systems, such as wearable electronics. Functional organic materials include small molecules, oligomers, and polymers, while hybrid materials include inorganic nanomaterials (such as zero-dimensional quantum dots, one-dimensional carbon nanotubes, or two-dimensional nanosheets) combined with organic matrices. A critically important step to implementing new electronic and photonic devices using such materials is the processing of thin films. While solution-based processing is the most common laboratory technique for organic and hybrid materials, vacuum-based deposition has been critical to the commercialization of organic light emitting diodes based on small molecules, for example. Therefore, it is desirable to explore vacuum-based deposition of organic and hybrid materials that include larger macromolecules, such as polymers. This review article motivates the need for physical vapor deposition of polymeric and hybrid thin films using matrix-assisted pulsed laser evaporation (MAPLE), which is a type of pulsed laser deposition. This review describes the development of variations in the MAPLE technique, discusses the current understanding of laser-target interactions and growth mechanisms for different MAPLE variations, surveys demonstrations of MAPLE-deposited organic and hybrid materials for electronic and photonic devices, and provides a future outlook for the technique.

  2. IN SITU Deposition of Fe-TiC Nanocomposite on Steel by Laser Cladding

    Science.gov (United States)

    Razavi, Mansour; Rahimipour, Mohammad Reza; Ganji, Mojdeh; Ganjali, Mansoreh; Gangali, Monireh

    The possibility of deposition of Fe-TiC nanocomposite on the surface of carbon steel substrate with the laser coating method had been investigated. Mechanical milling was used for the preparation of raw materials. The mixture of milled powders was used as a coating material on the substrate steel surface and a CO2 laser was used in continuous mode for coating. Microstructural studies were performed by scanning electron microscopy. Determinations of produced phases, crystallite size and mean strain have been done by X-ray diffraction. The hardness and wear resistance of coated samples were measured. The results showed that the in situ formation of Fe-TiC nanocomposite coating using laser method is possible. This coating has been successfully used to improve the hardness and wear resistance of the substrate so that the hardness increased by about six times. Coated iron and titanium carbide crystallite sizes were in the nanometer scale.

  3. Optical Characterization of SERS Substrates Based on Porous Au Films Prepared by Pulsed Laser Deposition

    Directory of Open Access Journals (Sweden)

    V. V. Strelchuk

    2015-01-01

    Full Text Available The SERS (surface enhanced Raman spectroscopy substrates based on nanocomposite porous films with gold nanoparticles (Au NPs arrays were formed using the method of the pulsed laser deposition from the back low-energy flux of erosion torch particles on the glass substrate fixed at the target plain. The dependencies of porosity, and morphology of the surface of the film regions located near and far from the torch axis on the laser ablation regime, laser pulses energy density, their number, and argon pressure in the vacuum chamber, were ascertained. The Au NPs arrays with the controllable extinction spectra caused by the local surface plasmon resonance were prepared. The possibility of the formation of SERS substrates for the detection of the Rhodamine 6G molecules with the concentration 10−10 Mol/L with the enhancement factor 4·107 was shown.

  4. SERS activity of silver and gold nanostructured thin films deposited by pulsed laser ablation

    Science.gov (United States)

    Agarwal, N. R.; Tommasini, M.; Fazio, E.; Neri, F.; Ponterio, R. C.; Trusso, S.; Ossi, P. M.

    2014-10-01

    Nanostructured Au and Ag thin films were obtained by nanosecond pulsed laser ablation in presence of a controlled Ar atmosphere. Keeping constant other deposition parameters such as target-to-substrate distance, incidence angle, laser wavelength and laser fluence, the film morphology, revealed by SEM, ranges from isolated NPs to island structures and sensibly depends on gas pressure (10-100 Pa) and on the laser pulse number (500-3 × 10). The control of these two parameters allows tailoring the morphology and correspondingly the optical properties of the films. The position and width of the surface plasmon resonance peak, in fact, can be varied with continuity. The films showed remarkable surface-enhanced Raman activity (SERS) that depends on the adopted deposition conditions. Raman maps were acquired on micrometer-sized areas of both silver and gold substrates selected among those with the strongest SERS activity. Organic dyes of interest in cultural heritage studies (alizarin, purpurin) have been also considered for bench marking the substrates produced in this work. Also the ability to detect the presence of biomolecules was tested using lysozyme in a label free configuration.

  5. Surface properties tuning of welding electrode-deposited hardfacings by laser heat treatment

    Science.gov (United States)

    Oláh, Arthur; Croitoru, Catalin; Tierean, Mircea Horia

    2018-04-01

    In this paper, several Cr-Mn-rich hardfacings have been open-arc deposited on S275JR carbon quality structural steel and further submitted to laser treatment at different powers. An overall increase with 34-98% in the average microhardness and wear resistance of the coatings has been obtained, due to the formation of martensite, silicides, as well as simple and complex carbides on the surface of the hardfacings, in comparison with the reference, not submitted to laser thermal treatment. Surface laser treatment of electrode-deposited hardfacings improves their chemical resistance under corrosive saline environments, as determined by the 43% lower amount of leached iron and respectively, 28% lower amount of manganese ions leached in a 10% wt. NaCl aqueous solution, comparing with the reference hardfacings. Laser heat treatment also promotes better compatibility of the hardfacings with water-based paints and oil-based paints and primers, through the relative increasing in the polar component of the surface energy (with up to 65%) which aids both water and filler spreading on the metallic surface.

  6. Polarized Raman study on the lattice structure of BiFeO3 films prepared by pulsed laser deposition

    KAUST Repository

    Yang, Yang; Yao, Yingbang; Zhang, Q.; Zhang, Xixiang

    2014-01-01

    Polarized Raman spectroscopy was used to study the lattice structure of BiFeO3 films on different substrates prepared by pulsed laser deposition. Interestingly, the Raman spectra of BiFeO3 films exhibit distinct polarization dependences

  7. In situ growth of p and n-type graphene thin films and diodes by pulsed laser deposition

    KAUST Repository

    Sarath Kumar, S. R.; Nayak, Pradipta K.; Hedhili, Mohamed N.; Khan, M. A.; Alshareef, Husam N.

    2013-01-01

    We report the in situ growth of p and n-type graphene thin films by ultraviolet pulsed laser deposition in the presence of argon and nitrogen, respectively. Electron microscopy and Raman studies confirmed the growth, while temperature dependent

  8. Parametric study of self-forming ZnO Nanowall network with honeycomb structure by Pulsed Laser Deposition

    KAUST Repository

    El Zein, B.; Boulfrad, Samir; Jabbour, Ghassan E.; Doghè che, Elhadj Hadj

    2014-01-01

    The successful synthesis of catalyst free zinc oxide (ZnO) Nanowall networks with honeycomb like structure by Pulsed Laser Deposition (PLD) is demonstrated in this paper. The synthesis was conducted directly on Silicon (Si) (1 0 0) and Glass

  9. High fluence deposition of polyethylene glycol films at 1064 nm by matrix assisted pulsed laser evaporation (MAPLE)

    DEFF Research Database (Denmark)

    Purice, Andreea; Schou, Jørgen; Kingshott, P.

    2007-01-01

    Matrix assisted pulsed laser evaporation (MAPLE) has been applied for deposition of thin polyethylene glycol (PEG) films with infrared laser light at 1064 nm. We have irradiated frozen targets (of 1 wt.% PEG dissolved in water) and measured the deposition rate in situ with a quartz crystal 2...... microbalance. The laser fluence needed to produce PEG films turned out to be unexpectedly high with a threshold of 9 J/cm(2) and the deposition rate was much lower than that with laser light at 355 nm. Results from matrix assisted laser desorption/ionization time-of-flight mass spectrometry (MALDI......-TOF-MS) analysis demonstrate that the chemistry, molecular weight and polydispersity of the PEG films were identical to the starting material. Studies of the film surface with scanning electron microscopy (SEM) indicate that the Si-substrate is covered by a relatively homogenous PEG film with few bare spots. (c...

  10. Pulsed laser deposition of YBCO films on ISD MgO buffered metal tapes

    CERN Document Server

    Ma, B; Koritala, R E; Fisher, B L; Markowitz, A R; Erck, R A; Baurceanu, R; Dorris, S E; Miller, D J; Balachandran, U

    2003-01-01

    Biaxially textured magnesium oxide (MgO) films deposited by inclined-substrate deposition (ISD) are desirable for rapid production of high-quality template layers for YBCO-coated conductors. High-quality YBCO films were grown on ISD MgO buffered metallic substrates by pulsed laser deposition (PLD). Columnar grains with a roof-tile surface structure were observed in the ISD MgO films. X-ray pole figure analysis revealed that the (002) planes of the ISD MgO films are tilted at an angle from the substrate normal. A small full-width at half maximum (FWHM) of approx 9deg was observed in the phi-scan for ISD MgO films deposited at an inclination angle of 55deg . In-plane texture in the ISD MgO films developed in the first approx 0.5 mu m from the substrate surface, and then stabilized with further increases in film thickness. Yttria-stabilized zirconia and ceria buffer layers were deposited on the ISD MgO grown on metallic substrates prior to the deposition of YBCO by PLD. YBCO films with the c-axis parallel to the...

  11. Synthesis and characterization of thin films of nitrided amorphous carbon deposited by laser ablation

    International Nuclear Information System (INIS)

    Rebollo P, B.

    2001-01-01

    The objective of this work is the synthesis and characterization of thin films of amorphous carbon (a-C) and thin films of nitrided amorphous carbon (a-C-N) using the laser ablation technique for their deposit. For this purpose, the physical properties of the obtained films were studied as function of diverse parameters of deposit such as: nitrogen pressure, power density, substrate temperature and substrate-target distance. For the characterization of the properties of the deposited thin films the following techniques were used: a) Raman spectroscopy which has demonstrated being a sensitive technique to the sp 2 and sp 3 bonds content, b) Energy Dispersive Spectroscopy which allows to know semi-quantitatively way the presence of the elements which make up the deposited films, c) Spectrophotometry, for obtaining the absorption spectra and subsequently the optical energy gap of the deposited material, d) Ellipsometry for determining the refraction index, e) Scanning Electron Microscopy for studying the surface morphology of thin films and, f) Profilemetry, which allows the determination the thickness of the deposited thin films. (Author)

  12. Modeling of the Effect of Path Planning on Thermokinetic Evolutions in Laser Powder Deposition Process

    Science.gov (United States)

    Foroozmehr, Ehsan; Kovacevic, Radovan

    2011-07-01

    A thermokinetic model coupling finite-element heat transfer with transformation kinetics is developed to determine the effect of deposition patterns on the phase-transformation kinetics of laser powder deposition (LPD) process of a hot-work tool steel. The finite-element model is used to define the temperature history of the process used in an empirical-based kinetic model to analyze the tempering effect of the heating and cooling cycles of the deposition process. An area is defined to be covered by AISI H13 on a substrate of AISI 1018 with three different deposition patterns: one section, two section, and three section. The two-section pattern divides the area of the one-section pattern into two sections, and the three-section pattern divides that area into three sections. The results show that dividing the area under deposition into smaller areas can influence the phase transformation kinetics of the process and, consequently, change the final hardness of the deposited material. The two-section pattern shows a higher average hardness than the one-section pattern, and the three-section pattern shows a fully hardened surface without significant tempered zones of low hardness. To verify the results, a microhardness test and scanning electron microscope were used.

  13. Pulsed laser deposition and characterization of multilayer metal-carbon thin films

    Energy Technology Data Exchange (ETDEWEB)

    Siraj, K., E-mail: khurram.uet@gmail.com [Advance Physics Laboratory, Department of Physics, University of Engineering and Technology, Lahore (Pakistan); Khaleeq-ur-Rahman, M.; Rafique, M.S.; Munawar, M.Z. [Advance Physics Laboratory, Department of Physics, University of Engineering and Technology, Lahore (Pakistan); Naseem, S.; Riaz, S. [Center for Solid State Physics, University of Punjab, Lahore (Pakistan)

    2011-05-15

    Cobalt-DLC multilayer films were deposited with increasing content of cobalt, keeping carbon content constant by pulsed laser deposition technique. A cobalt free carbon film was also deposited for comparison. Excimer laser was employed to ablate the materials onto silicon substrate, kept at 250 deg. C, while post-deposition annealing at 400 deg. C was also performed in situ. The formation of cobalt grains within the carbon matrix in Co-DLC films can be seen through scanning electron and atomic force micrographs while no grains on the surface of the cobalt-free DLC film were observed. Raman spectra of all the films show D- and G-bands, which is a confirmation that the films are DLC in nature. According to Vibrating sample magnetometer (VSM) measurements, the DLC films with cobalt revealed ferromagnetic behaviour whereas the cobalt free DLC film exhibited diamagnetic behaviour. The pure DLC film also shows ferromagnetic nature when diamagnetic background is subtracted. Spectroscopic Ellipsometry (SE) analysis showed that the optical band gaps, refractive indices and extinction coefficients of Co-DLC films can be effectively tuned with increasing content of cobalt.

  14. Pulsed laser deposition and characterization of multilayer metal-carbon thin films

    International Nuclear Information System (INIS)

    Siraj, K.; Khaleeq-ur-Rahman, M.; Rafique, M.S.; Munawar, M.Z.; Naseem, S.; Riaz, S.

    2011-01-01

    Cobalt-DLC multilayer films were deposited with increasing content of cobalt, keeping carbon content constant by pulsed laser deposition technique. A cobalt free carbon film was also deposited for comparison. Excimer laser was employed to ablate the materials onto silicon substrate, kept at 250 deg. C, while post-deposition annealing at 400 deg. C was also performed in situ. The formation of cobalt grains within the carbon matrix in Co-DLC films can be seen through scanning electron and atomic force micrographs while no grains on the surface of the cobalt-free DLC film were observed. Raman spectra of all the films show D- and G-bands, which is a confirmation that the films are DLC in nature. According to Vibrating sample magnetometer (VSM) measurements, the DLC films with cobalt revealed ferromagnetic behaviour whereas the cobalt free DLC film exhibited diamagnetic behaviour. The pure DLC film also shows ferromagnetic nature when diamagnetic background is subtracted. Spectroscopic Ellipsometry (SE) analysis showed that the optical band gaps, refractive indices and extinction coefficients of Co-DLC films can be effectively tuned with increasing content of cobalt.

  15. Production of porous PTFE-Ag composite thin films by pulsed laser deposition

    International Nuclear Information System (INIS)

    Kecskeméti, Gabriella; Hopp, Béla; Smausz, Tomi; Tóth, Zsolt; Szabó, Gábor

    2012-01-01

    The suitability of pulsed laser deposition technique for preparation of polytetrafluoroethylene (PTFE) and silver (Ag) composite thin films was demonstrated. Disk-shaped targets combined from silver and Teflon with various percentages were ablated with pulses of an ArF excimer laser. The chemical composition of the deposited layers was estimated based on deposition rates determined for the pure PTFE and Ag films. EDX and SEM analyses using secondary electron and backscattered electron images proved that the morphology of the layers is determined by the PTFE which is the main constituent and it is transferred mostly in form of grains and clusters forming a sponge-like structure with high specific surface. The Ag content is distributed over the surface of the PTFE structure. Contact angle measurements showed that with increasing the amount of Ag in the deposited layers the surface significantly enhanced the wetting properties. Conductivity experiments demonstrated that when the average silver content of the layers was increased from 0.16 to 3.28 wt% the resistance of our PTFE-Ag composite films decreased with about three orders of magnitudes (from ∼10 MΩ to ∼10 kΩ). The properties of these films suggest as being a good candidate for future electrochemical sensor applications.

  16. Topography evolution of germanium thin films synthesized by pulsed laser deposition

    Directory of Open Access Journals (Sweden)

    P. Schumacher

    2017-04-01

    Full Text Available Germanium thin films were deposited by Pulsed Laser Deposition (PLD onto single crystal Ge (100 and Si (100 substrates with a native oxide film on the surface. The topography of the surface was investigated by Atomic Force Microscopy (AFM to evaluate the scaling behavior of the surface roughness of amorphous and polycrystalline Ge films grown on substrates with different roughnesses. Roughness evolution was interpreted within the framework of stochastic rate equations for thin film growth. Here the Kardar-Parisi-Zhang equation was used to describe the smoothening process. Additionally, a roughening regime was observed in which 3-dimensional growth occurred. Diffusion of the deposited Ge adatoms controlled the growth of the amorphous Ge thin films. The growth of polycrystalline thin Ge films was dominated by diffusion processes only in the initial stage of the growth.

  17. Deposition of Au/TiO2 film by pulsed laser

    International Nuclear Information System (INIS)

    Zhao Chongjun; Zhao Quanzhong; Zhao Qitao; Qiu Jianrong; Zhu Congshan

    2006-01-01

    Au nanoparticles, which were photoreduced by a Nd:YAG laser in HAuCl 4 solution containing TiO 2 colloid and accompanied by the TiO 2 particles, were deposited on the substrate surface. The film consisting of Au/TiO 2 particles was characterized by the absorption spectra, scanning electron microscopy (SEM) and X-ray diffraction (XRD) analysis. The adhesion between the film and substrate was evaluated by using adhesive tape test. It was found that the presence of TiO 2 dramatically enhanced the adhesion strength between the film and the substrate, as well as the deposition rate of film. The mechanism for the deposition of Au/TiO 2 film was also discussed

  18. Oxygen reduction activity of N-doped carbon-based films prepared by pulsed laser deposition

    Science.gov (United States)

    Hakoda, Teruyuki; Yamamoto, Shunya; Kawaguchi, Kazuhiro; Yamaki, Tetsuya; Kobayashi, Tomohiro; Yoshikawa, Masahito

    2010-12-01

    Carbon-based films with nitrogen species on their surface were prepared on a glassy carbon (GC) substrate for application as a non-platinum cathode catalyst for polymer electrolyte fuel cells. Cobalt and carbon were deposited in the presence of N 2 gas using a pulsed laser deposition method and then the metal Co was removed by HCl-washing treatment. Oxygen reduction reaction (ORR) activity was electrochemically determined using a rotating disk electrode system in which the film samples on the GC substrate were replaceable. The ORR activity increased with the temperature of the GC substrate during deposition. A carbon-based film prepared at 600 °C in the presence of N 2 at 66.7 Pa showed the highest ORR activity among the tested samples (0.66 V vs. NHE). This film was composed of amorphous carbons doped with pyridine type nitrogen atoms on its surface.

  19. Laser ray tracing and power deposition on an unstructured three-dimensional grid

    International Nuclear Information System (INIS)

    Kaiser, Thomas B.

    2000-01-01

    A scheme is presented for laser beam evolution and power deposition on three-dimensional unstructured grids composed of hexahedra, prisms, pyramids, and tetrahedra. The geometrical-optics approximation to the electromagnetic wave equation is used to follow propagation of a collection of discrete rays used to represent the beam(s). Ray trajectory equations are integrated using a method that is second order in time, exact for a constant electron-density gradient, and capable of dealing with density discontinuities that arise in certain hydrodynamics formulations. Power deposition by inverse-bremsstrahlung is modeled with a scheme based on Gaussian quadrature to accommodate a deposition rate whose spatial variation is highly nonuniform. Comparisons with analytic results are given for a density ramp in three dimensions, and a ''quadratic-well'' density trough in two dimensions. (c) 2000 The American Physical Society

  20. A comparison of plasma in laser and hybrid laser-magnetron SiC deposition systems

    Czech Academy of Sciences Publication Activity Database

    Novotný, Michal; Bulíř, Jiří; Lančok, Ján; Jelínek, Miroslav

    2007-01-01

    Roč. 4, - (2007), S1017-S1021 ISSN 1612-8850 R&D Projects: GA AV ČR KJB1010417; GA ČR GA202/06/0216 Institutional research plan: CEZ:AV0Z10100522 Keywords : laser ablation * magnetron sputtering * optical emission spectroscopy Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.132, year: 2007

  1. Growth of strained, ferroelectric NaNbO{sub 3} thin films by pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Sellmann, Jan; Schwarzkopf, Jutta; Duk, Andreas; Kwasniewski, Albert; Schmidbauer, Martin; Fornari, Roberto [IKZ, Berlin (Germany)

    2012-07-01

    Due to its promising ferro-/piezoelectric properties and high Curie temperature NaNbO{sub 3} has attracted much attention. In contrast to bulk crystals, thin epitaxial films may incorporate and maintain a certain compressive or tensile lattice strain, depending on the used substrate/film combination. This deformation of the crystal lattice is known to strongly influence the ferroelectric properties of perovskites. In the case of NaNbO{sub 3} compressive strain is achieved in films deposited on NdGaO{sub 3} and SrTiO{sub 3} substrates while deposition on DyScO{sub 3} and TbScO{sub 3} leads to tensile in-plane strain. In order to characterize and practically apply the ferroelectric films, it is necessary to embed them in a capacitor structure for which we use pseudomorphically grown SrRuO{sub 3} as bottom electrodes. We report on the deposition of SrRuO{sub 3} and NaNbO{sub 3} single layers on SrTiO{sub 3}, DyScO{sub 3}, TbScO{sub 3} and NbGaO{sub 3} substrates by means of pulsed laser deposition. By adjusting the substrate temperature, the oxygen partial pressure and the laser frequency we have successfully deposited smooth, strained, single phase NaNbO{sub 3} thin films. Investigations of the films by atomic force microscopy and high resolution X-ray diffraction reveal the dependence of the surface morphology and the incorporated lattice strain on the deposition parameters and the lattice mismatch, respectively. All films exhibit piezoelectric properties, as proven by piezoresponse force microscopy.

  2. Role of temperature and energy density in the pulsed laser deposition of zirconium oxide thin film

    International Nuclear Information System (INIS)

    Mittra, Joy; Abraham, G.J.; Viswanadham, C.S.; Kulkarni, U.D.; Dey, G.K.

    2011-01-01

    Present work brings out the effects of energy density and substrate temperature on pulsed laser deposition of zirconium oxide thin film on Zr-base alloy substrates. The ablation of sintered zirconia has been carried out using a KrF excimer laser having 30 ns pulse width and 600 mJ energy at source at 10 Hz repetition rate. To comprehend effects of these parameters on the synthesized thin film, pure zirconia substrate has been ablated at two different energy densities, 2 J.cm -2 and 5 J.cm -2 , keeping the substrate at 300 K, 573 K and 873 K, respectively. After visual observation, deposited thin films have been examined using Raman Spectroscopy (RS) and X-ray Photo-electron Spectroscopy (XPS). It has been found that the oxide deposited at 300 K temperature does not show good adherence with the substrate and deteriorates further with the reduction in energy density of the incident laser. The oxide films, deposited at 573 K and 873 K, have been found to be adherent with the substrate and appear lustrous black. These indicate that the threshold for adherence of the zirconia film on the Zr-base alloy substrate lies in between 300 K and 573 K. Analysis of Raman spectra has indicated that thin films of zirconia, deposited using pulsed laser, on the Zr-base metallic substrate are initially in amorphous state. Experimental evidence has indicated a strong link among the degree of crystallinity of the deposited oxide film, the substrate temperature and the energy density. It also has shown that the crystallization of the oxide film is dependent on the substrate temperature and the duration of holding at high temperature. The O:Zr ratios of the films, analyzed from the XPS data, have been found to be close to but less than 2. This appears to explain the reason for the transformation of amorphous oxide into monoclinic and tetragonal phases, below 573 K, and not into cubic phase, which is reported to be more oxygen deficient. (author)

  3. Internal energy deposition with silicon nanoparticle-assisted laser desorption/ionization (SPALDI) mass spectrometry

    Science.gov (United States)

    Dagan, Shai; Hua, Yimin; Boday, Dylan J.; Somogyi, Arpad; Wysocki, Ronald J.; Wysocki, Vicki H.

    2009-06-01

    The use of silicon nanoparticles for laser desorption/ionization (LDI) is a new appealing matrix-less approach for the selective and sensitive mass spectrometry of small molecules in MALDI instruments. Chemically modified silicon nanoparticles (30 nm) were previously found to require very low laser fluence in order to induce efficient LDI, which raised the question of internal energy deposition processes in that system. Here we report a comparative study of internal energy deposition from silicon nanoparticles to previously explored benzylpyridinium (BP) model compounds during LDI experiments. The internal energy deposition in silicon nanoparticle-assisted laser desorption/ionization (SPALDI) with different fluorinated linear chain modifiers (decyl, hexyl and propyl) was compared to LDI from untreated silicon nanoparticles and from the organic matrix, [alpha]-cyano-4-hydroxycinnamic acid (CHCA). The energy deposition to internal vibrational modes was evaluated by molecular ion survival curves and indicated that the ions produced by SPALDI have an internal energy threshold of 2.8-3.7 eV. This is slightly lower than the internal energy induced using the organic CHCA matrix, with similar molecular survival curves as previously reported for LDI off silicon nanowires. However, the internal energy associated with desorption/ionization from the silicon nanoparticles is significantly lower than that reported for desorption/ionization on silicon (DIOS). The measured survival yields in SPALDI gradually decrease with increasing laser fluence, contrary to reported results for silicon nanowires. The effect of modification of the silicon particle surface with semifluorinated linear chain silanes, including fluorinated decyl (C10), fluorinated hexyl (C6) and fluorinated propyl (C3) was explored too. The internal energy deposited increased with a decrease in the length of the modifier alkyl chain. Unmodified silicon particles exhibited the highest analyte internal energy

  4. Local electrophoresis deposition assisted by laser trapping coupled with a spatial light modulator for three-dimensional microfabrication

    Science.gov (United States)

    Matsuura, Toshiki; Takai, Takanari; Iwata, Futoshi

    2017-10-01

    We describe a novel three-dimensional fabrication technique using local electrophoresis deposition assisted by laser trapping coupled with a spatial light modulator (SLM). In a solution containing nanometer-scale colloidal Au particles, multiple laser spots formed on a conductive substrate by the SLM gathered the nanoparticles together, and then the nanoparticles were electrophoretically deposited onto the substrate by an applied electrical field. However, undesirable sub-spots often appeared due to optical interference from the multiple laser spots, which deteriorated the accuracy of the deposition. To avoid the appearance of undesirable sub-spots, we proposed a method using quasi-multiple spots, which we realized by switching the position of a single spot briefly using the SLM. The method allowed us to deposit multiple dots on the substrate without undesirable sub-dot deposition. By moving the substrate downward during deposition, multiple micro-pillar structures could be fabricated. As a fabrication property, the dependence of the pillar diameter on laser intensity was investigated by changing the number of laser spots. The smallest diameter of the four pillars fabricated in this study was 920 nm at the laser intensity of 2.5 mW. To demonstrate the effectiveness of the method, multiple spiral structures were fabricated. Quadruple spirals of 46 µm in height were successfully fabricated with a growth rate of 0.21 µm/s using 2200 frames of the CGH patterns displayed in the SLM at a frame rate of 10 fps.

  5. Effect of Laser Power and Gas Flow Rate on Properties of Directed Energy Deposition of Titanium Alloy

    Science.gov (United States)

    Mahamood, Rasheedat M.

    2018-03-01

    Laser metal deposition (LMD) process belongs to the directed energy deposition class of additive manufacturing processes. It is an important manufacturing technology with lots of potentials especially for the automobile and aerospace industries. The laser metal deposition process is fairly new, and the process is very sensitive to the processing parameters. There is a high level of interactions among these process parameters. The surface finish of part produced using the laser metal deposition process is dependent on the processing parameters. Also, the economy of the LMD process depends largely on steps taken to eliminate or reduce the need for secondary finishing operations. In this study, the influence of laser power and gas flow rate on the microstructure, microhardness and surface finish produced during the laser metal deposition of Ti6Al4V was investigated. The laser power was varied between 1.8 kW and 3.0 kW, while the gas flow rate was varied between 2 l/min and 4 l/min. The microstructure was studied under an optical microscope, the microhardness was studied using a Metkon microhardness indenter, while the surface roughness was studied using a Jenoptik stylus surface analyzer. The results showed that better surface finish was produced at a laser power of 3.0 kW and a gas flow rate of 4 l/min.

  6. Nanoparticle Enhanced Laser Induced Breakdown Spectroscopy: Effect of nanoparticles deposited on sample surface on laser ablation and plasma emission

    International Nuclear Information System (INIS)

    De Giacomo, A.; Gaudiuso, R.; Koral, C.; Dell'Aglio, M.; De Pascale, O.

    2014-01-01

    In this paper the use of metallic nanoparticles (NPs) for improving Laser Induced Breakdown Spectroscopy (LIBS) is discussed. In the case of conductors an emission signal enhancement up to 1–2 orders of magnitude was obtained depositing NPs on the sample surface by drying a micro-drop of colloidal solution. The basic mechanisms of Nanoparticle Enhanced LIBS (NELIBS) were studied and the main causes of this significantly large enhancement were found to be related to the effect of NPs on the laser ablation process, in terms of a faster and more efficient production of seed electrons with respect to conventional LIBS. The characteristics of NELIBS-produced plasma were investigated by emission spectroscopy and spectrally resolved images. In spite of similar plasma parameters, the NELIBS plasma was found to have larger emission volume and longer persistence than the LIBS one. A method to determine NP concentration and size was also proposed, which involved depositing NPs on non-interacting substrates, and proved the feasibility of LIBS as a fast detection tool for a preliminary characterization of NPs. - Highlights: • Effect of NPs on sample surface enables instantaneous field emission. • More efficient ablation • LIBS emission enhancement up to 1–2 orders of magnitude • Possibility of NP characterization in terms of concentration and size

  7. Pulsed laser deposition of II-VI and III-V semiconductor materials

    Energy Technology Data Exchange (ETDEWEB)

    Mele, A.; Di Palma, T.M.; Flamini, C.; Giardini Guidoni, A. [Rome, Univ. `La Sapienza` (Italy). Dep. di Chimica

    1998-12-01

    Pulsed laser irradiation of a solid target involves electronic excitation and heating, followed by expansion from the target of the elliptical gas cloud (plume) which can be eventually condensed on a suitable substrate. Pulsed laser ablation has been found to be a valuable technique to prepare II-VI and III-V thin films of semiconductor materials. Pulsed laser ablation deposition is discussed in the light of the results of an investigation on CdS, CdSe, CdTe and CdSe/CdTe multilayers and AIN, GaN and InN together with Al-Ga-In-N heterostructures. [Italiano] L`irradiazione di un target solido, mediante un fascio laser impulsato, genera una serie di processi che possono essere schematizzati come segue: riscaldamento ed eccitazione elettronica del target, da cui consegue l`espulsione di materiale sotto forma di una nube gassosa di forma ellissoidale (plume), che espande e puo` essere fatta depositare su un opportuno substrato. L`ablazione lasersi e` rivelata una tecnica valida per preparare film sottili di composti di elementi del II-VI e del III-V gruppo della tavola periodica. La deposizione via ablazione laser viene discussa alla luce dei risultati ottenuti nella preparazione di film di CdS, CdSe, CdTe e di film multistrato di CdSe/CdTe, di film di AIN, GaN, InN e di eterostrutture di Al-Ga-In-N.

  8. Fabrication of boron-phosphide neutron detectors

    International Nuclear Information System (INIS)

    Fitzsimmons, M.; Pynn, R.

    1997-01-01

    Boron phosphide is a potentially viable candidate for high neutron flux neutron detectors. The authors have explored chemical vapor deposition methods to produce such detectors and have not been able to produce good boron phosphide coatings on silicon carbide substrates. However, semi-conducting quality films have been produced. Further testing is required

  9. Exploration of microstructure and wear behaviour of laser metal deposited Ti6Al4V/Cu composites

    CSIR Research Space (South Africa)

    Erinosho, MF

    2016-01-01

    Full Text Available This paper presents the explorations conducted on the evolving microstructures and the dry sliding wear of the laser deposited Ti6Al4V/Cu composites. The laser powers between 1300 W and 1600 W; scanning speeds between 0.30 and 0.72 m/min were...

  10. Biological and physical properties of pulsed-laser-deposited zirconia/hydroxyapatite on titanium: in vitro study

    Czech Academy of Sciences Publication Activity Database

    Teuberová, Z.; Seydlová, M.; Dostálová, T.; Dvořánková, B.; Smetana, K. Jr.; Jelínek, Miroslav; Mašínová, Petra; Kocourek, Tomáš; Kolářová, K.; Wilson, J.

    2007-01-01

    Roč. 17, č. 1 (2007), s. 45-49 ISSN 1054-660X R&D Projects: GA MZd NR8512 Institutional research plan: CEZ:AV0Z10100522 Keywords : dental implants * hydroxyapatite * titanium * laser deposition * PLD Subject RIV: BH - Optics, Masers, Lasers Impact factor: 0.696, year: 2007

  11. Influence of silicon orientation and cantilever undercut on the determination of Young's modulus of pulsed laser deposited PZT

    NARCIS (Netherlands)

    Nazeer, H.; Woldering, L.A.; Abelmann, Leon; Nguyen, Duc Minh; Rijnders, Augustinus J.H.M.; Elwenspoek, Michael Curt

    In this work we show for the first time that the effective in-plane Young’s modulus of PbZr0.52Ti0.48O3 (PZT) thin films, deposited by pulsed laser deposition (PLD) on dedicated single crystal silicon cantilevers, is independent of the in-plane orientation of cantilevers.

  12. Thickness dependence of the switching voltage in all-oxide ferroelectric thin-film capacitors prepared by pulsed laser deposition

    NARCIS (Netherlands)

    Cillessen, J.F.M.; Prins, M.W.J.; Wolf, R.M.

    1997-01-01

    Thin-film ferroelectric capacitors consisting of PbZr0.53Ti0.47O3 sandwiched between La0.5Sr0.5CoO3 electrodes have been deposited using pulsed laser deposition. The combination of oxidic perovskite-type materials results in capacitors with a coercive field (Ec) which is comparable with values for

  13. Fabrication and characterization of boron-doped nanocrystalline diamond-coated MEMS probes

    Science.gov (United States)

    Bogdanowicz, Robert; Sobaszek, Michał; Ficek, Mateusz; Kopiec, Daniel; Moczała, Magdalena; Orłowska, Karolina; Sawczak, Mirosław; Gotszalk, Teodor

    2016-04-01

    Fabrication processes of thin boron-doped nanocrystalline diamond (B-NCD) films on silicon-based micro- and nano-electromechanical structures have been investigated. B-NCD films were deposited using microwave plasma assisted chemical vapour deposition method. The variation in B-NCD morphology, structure and optical parameters was particularly investigated. The use of truncated cone-shaped substrate holder enabled to grow thin fully encapsulated nanocrystalline diamond film with a thickness of approx. 60 nm and RMS roughness of 17 nm. Raman spectra present the typical boron-doped nanocrystalline diamond line recorded at 1148 cm-1. Moreover, the change in mechanical parameters of silicon cantilevers over-coated with boron-doped diamond films was investigated with laser vibrometer. The increase of resonance to frequency of over-coated cantilever is attributed to the change in spring constant caused by B-NCD coating. Topography and electrical parameters of boron-doped diamond films were investigated by tapping mode AFM and electrical mode of AFM-Kelvin probe force microscopy (KPFM). The crystallite-grain size was recorded at 153 and 238 nm for boron-doped film and undoped, respectively. Based on the contact potential difference data from the KPFM measurements, the work function of diamond layers was estimated. For the undoped diamond films, average CPD of 650 mV and for boron-doped layer 155 mV were achieved. Based on CPD values, the values of work functions were calculated as 4.65 and 5.15 eV for doped and undoped diamond film, respectively. Boron doping increases the carrier density and the conductivity of the material and, consequently, the Fermi level.

  14. Excimer pulsed laser deposition and annealing of YSZ nanometric films on Si substrates

    International Nuclear Information System (INIS)

    Caricato, A.P.; Barucca, G.; Di Cristoforo, A.; Leggieri, G.; Luches, A.; Majni, G.; Martino, M.; Mengucci, P.

    2005-01-01

    We report experimental results obtained for electrical and structural characteristics of yttria-stabilised zirconia (YSZ) thin films deposited by pulsed laser deposition (PLD) on Si substrates at room temperature. Some samples were submitted to thermal treatments in different ambient atmospheres (vacuum, N 2 and O 2 ) at a moderate temperature. The effects of thermal treatments on the film electrical properties were studied by C-V and I-V measurements. Structural characteristics were obtained by X-ray diffraction (XRD), X-ray reflectivity (XRR) and transmission electron microscopy (TEM) analyses. The as-deposited film was amorphous with an in-depth non-uniform density. The annealed films became polycrystalline with a more uniform density. The sample annealed in O 2 was uniform over all the thickness. Electrical characterisation showed large hysteresis, high leakage current and positive charges trapped in the oxide in the as-deposited film. Post-deposition annealing, especially in O 2 atmosphere, improved considerably the electrical properties of the films

  15. Predictive modeling capabilities from incident powder and laser to mechanical properties for laser directed energy deposition

    Science.gov (United States)

    Shin, Yung C.; Bailey, Neil; Katinas, Christopher; Tan, Wenda

    2018-01-01

    This paper presents an overview of vertically integrated comprehensive predictive modeling capabilities for directed energy deposition processes, which have been developed at Purdue University. The overall predictive models consist of vertically integrated several modules, including powder flow model, molten pool model, microstructure prediction model and residual stress model, which can be used for predicting mechanical properties of additively manufactured parts by directed energy deposition processes with blown powder as well as other additive manufacturing processes. Critical governing equations of each model and how various modules are connected are illustrated. Various illustrative results along with corresponding experimental validation results are presented to illustrate the capabilities and fidelity of the models. The good correlations with experimental results prove the integrated models can be used to design the metal additive manufacturing processes and predict the resultant microstructure and mechanical properties.

  16. Predictive modeling capabilities from incident powder and laser to mechanical properties for laser directed energy deposition

    Science.gov (United States)

    Shin, Yung C.; Bailey, Neil; Katinas, Christopher; Tan, Wenda

    2018-05-01

    This paper presents an overview of vertically integrated comprehensive predictive modeling capabilities for directed energy deposition processes, which have been developed at Purdue University. The overall predictive models consist of vertically integrated several modules, including powder flow model, molten pool model, microstructure prediction model and residual stress model, which can be used for predicting mechanical properties of additively manufactured parts by directed energy deposition processes with blown powder as well as other additive manufacturing processes. Critical governing equations of each model and how various modules are connected are illustrated. Various illustrative results along with corresponding experimental validation results are presented to illustrate the capabilities and fidelity of the models. The good correlations with experimental results prove the integrated models can be used to design the metal additive manufacturing processes and predict the resultant microstructure and mechanical properties.

  17. Characteristics of LaB{sub 6} thin films grown by pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Craciun, Valentin; Socol, Gabriel; Craciun, Doina, E-mail: doina.craciun@inflpr.ro [National Institute for Lasers, Plasma, and Radiation Physics, Magurele 077125 (Romania); Cristea, Daniel [Materials Science Department, Transilvania University of Brasov, Brasov 500036 (Romania); Lambers, Eric [Major Analytical Instrumentation Center (MAIC), University of Florida, Gainesville, Florida 32611 (United States); Trusca, Roxana [Faculty of Applied Chemistry and Material Science, Department of Science and Engineering of Oxide Materials and Nanomaterials, University Politehnica of Bucharest, Bucharest 011061, 060042 (Romania); Fairchild, Steven [Air Force Research Laboratory, Materials and Manufacturing Directorate (AFRL/RXA) Wright-Patterson AFB, Ohio 45433-7707 (United States); Back, Tyson; Gruen, Greggory [Air Force Research Laboratory, Materials and Manufacturing Directorate (AFRL/RXA) Wright-Patterson AFB, Ohio 45433-7707 and Energy and Environmental Engineering Division, University of Dayton Research Institute, Dayton, Ohio 45469-0170 (United States)

    2016-09-15

    LaB{sub 6} thin films were deposited at a temperature of 500 °C under vacuum or Ar atmosphere by the pulsed laser deposition technique on (100) Si substrates using a KrF laser. Grazing incidence x-ray diffraction investigations found that films were nanocrystalline, with grain size dimensions from 86 to 102 nm and exhibited microstrain values around 1.1%. Simulations of the x-ray reflectivity curves acquired from the deposited films showed that films had a density around 4.55 g/cm{sup 3}, and were very smooth, with a surface roughness root-mean-square of 1.5 nm, which was also confirmed by scanning electron and atomic force microscopy measurements. All films were covered by a ∼2 nm thick contamination layer that formed when samples were exposed to the ambient. Auger electron spectroscopy investigations found very low oxygen impurity levels below 1.5 at. % once the contamination surface layer was removed by Ar ion sputtering. Four point probe measurements showed that films were conductive, with a resistivity value around 200 μΩ cm for those deposited under Ar atmosphere and slightly higher for those deposited under vacuum. Nanoindentation and scratch investigations showed that films were rather hard, H ∼ 16 GPa, E ∼ 165 GPa, and adherent to the substrate. Thermionic emission measurements indicated a work function value of 2.66 eV, very similar to other reported values for LaB{sub 6}.

  18. Transmission of reactive pulsed laser deposited VO{sub 2} films in the THz domain

    Energy Technology Data Exchange (ETDEWEB)

    Émond, Nicolas; Hendaoui, Ali; Ibrahim, Akram; Al-Naib, Ibraheem; Ozaki, Tsuneyuki; Chaker, Mohamed, E-mail: chaker@emt.inrs.ca

    2016-08-30

    Highlights: • Synthesis of vanadium dioxide (VO{sub 2}) thin films as a function of oxygen pressure (2–25 mTorr) using Reactive Pulsed Laser Deposition (RPLD). • Characterization of RPLD-grown VO{sub 2} thin films in the THz frequency range. • THz switches and/or sensors require VO{sub 2} films deposited at low oxygen pressure (i.e. low transition temperature, large amplitude contrast of THz transmission, narrow hysteresis width). • THz optical memory applications require VO{sub 2} films deposited at high oxygen pressure (broad hysteresis width). - Abstract: This work reports on the characteristics of the insulator-to-metal transition (IMT) of reactive pulsed laser deposited vanadium dioxide (VO{sub 2}) films in the terahertz (THz) frequency range, namely the transition temperature T{sub IMT}, the amplitude contrast of the THz transmission over the IMT ΔA, the transition sharpness ΔT and the hysteresis width ΔH. XRD analysis shows the sole formation of VO{sub 2} monoclinic structure with an enhancement of (011) preferential orientation when varying the O{sub 2} pressure (P{sub O2}) during the deposition process from 2 to 25 mTorr. THz transmission measurements as a function of temperature reveal that VO{sub 2} films obtained at low P{sub O2} exhibit low T{sub IMT}, large ΔA, and narrow ΔH. Increasing P{sub O2} results in VO{sub 2} films with higher T{sub IMT}, smaller ΔA, broader ΔH and asymmetric hysteresis loop. The good control of the VO{sub 2} IMT features in the THz domain could be further exploited for the development of advanced smart devices, such as ultrafast switches, modulators, memories and sensors.

  19. Organic semiconductor rubrene thin films deposited by pulsed laser evaporation of solidified solutions

    Science.gov (United States)

    Majewska, N.; Gazda, M.; Jendrzejewski, R.; Majumdar, S.; Sawczak, M.; Śliwiński, G.

    2017-08-01

    Organic semiconductor rubrene (C42H28) belongs to most preferred spintronic materials because of the high charge carrier mobility up to 40 cm2(V·s)-1. However, the fabrication of a defect-free, polycrystalline rubrene for spintronic applications represents a difficult task. We report preparation and properties of rubrene thin films deposited by pulsed laser evaporation of solidified solutions. Samples of rubrene dissolved in aromatic solvents toluene, xylene, dichloromethane and 1,1-dichloroethane (0.23-1% wt) were cooled to temperatures in the range of 16.5-163 K and served as targets. The target ablation was provided by a pulsed 1064 nm or 266 nm laser. For films of thickness up to 100 nm deposited on Si, glass and ITO glass substrates, the Raman and AFM data show presence of the mixed crystalline and amorphous rubrene phases. Agglomerates of rubrene crystals are revealed by SEM observation too, and presence of oxide/peroxide (C42H28O2) in the films is concluded from matrix-assisted laser desorption/ionization time-of-flight spectroscopic analysis.

  20. One-pot synthesis and transfer of PMMA/Ag photonic nanocomposites by pulsed laser deposition

    Science.gov (United States)

    Karoutsos, V.; Koutselas, I.; Orfanou, P.; Mpatzaka, Th.; Vasileiadis, M.; Vassilakopoulou, A.; Vainos, N. A.; Perrone, A.

    2015-08-01

    Nanocomposite films comprising metallic nanoparticles in polymer matrices find increasing use in emerging photonic, electronic and microsystem applications owing to their tailored advanced functionalities. The versatile development of such films based on poly-methyl-methacrylate (PMMA) matrix having embedded Ag nanoparticles is addressed here. Two low-cost one-pot chemical methods for the synthesis of bulk target nanocomposite materials are demonstrated. These nanocomposites are subsequently transferred via pulsed laser deposition using 193 nm ArF excimer laser radiation, producing films maintaining the structural and functional properties. Both target- and laser-deposited materials have been thoroughly characterized using microscopic, spectroscopic and thermal analysis methods. Infrared spectra demonstrated the close molecular PMMA chain similarity for both target and film materials, though structural alterations identified by thermal analysis proved the enhanced characteristics of films grown. High-resolution electron microscopy proved the transfer of Ag nanoparticles sized 10-50 nm. Visible absorption peaked in the spectral range of 430-440 nm and attributed to the Ag nanocomposite plasmonic response verifying the transfer of the functional performance from target to film.

  1. Structural characterization of AlN films synthesized by pulsed laser deposition

    International Nuclear Information System (INIS)

    Szekeres, A.; Fogarassy, Zs.; Petrik, P.; Vlaikova, E.; Cziraki, A.; Socol, G.; Ristoscu, C.; Grigorescu, S.; Mihailescu, I.N.

    2011-01-01

    We obtained AlN thin films by pulsed laser deposition (PLD) from a polycrystalline AlN target using a pulsed KrF* excimer laser source (248 nm, 25 ns, intensity of ∼4 x 10 8 W/cm 2 , repetition rate 3 Hz, 10 J/cm 2 laser fluence). The target-Si substrate distance was 5 cm. Films were grown either in vacuum (10 -4 Pa residual pressure) or in nitrogen at a dynamic pressure of 0.1 and 10 Pa, using a total of 20,000 subsequent pulses. The films structure was characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM) and spectral ellipsometry (SE). Our TEM and XRD studies showed a strong dependence of the film structure on the nitrogen content in the ambient gas. The films deposited in vacuum exhibited a high quality polycrystalline structure with a hexagonal phase. The crystallite growth proceeds along the c-axis, perpendicular to the substrate surface, resulting in a columnar and strongly textured structure. The films grown at low nitrogen pressure (0.1 Pa) were amorphous as seen by TEM and XRD, but SE data analysis revealed ∼1.7 vol.% crystallites embedded in the amorphous AlN matrix. Increasing the nitrogen pressure to 10 Pa promotes the formation of cubic (≤10 nm) crystallites as seen by TEM but their density was still low to be detected by XRD. SE data analysis confirmed the results obtained from the TEM and XRD observations.

  2. Structural and Optical Properties of Eu Doped ZnO Nanorods prepared by Pulsed Laser Deposition

    KAUST Repository

    Alarawi, Abeer

    2014-06-23

    Nano structured wide band gap semiconductors have attracted attention of many researchers due to their potential electronic and optoelectronic applications. In this thesis, we report successful synthesis of well aligned Eu doped ZnO nano-rods prepared, for the first time to our knowledge, by pulsed laser deposition (PLD) without any catalyst. X-ray diffraction (XRD) patterns shows that these Eu doped ZnO nanorods are grown along the c-axis of ZnO wurtzite structure. We have studied the effect of the PLD growth conditions on forming vertically aligned Eu doped ZnO nanorods. The structural properties of the material are investigated using a -scanning electron microscope (SEM). The PLD parameters must be carefully controlled in order to obtain c-axis oriented ZnO nanorods on sapphire substrates, without the use of any catalyst. The experiments conducted in order to identify the optimal growth conditions confirmed that, by adjusting the target-substrate distance, substrate temperature, laser energy and deposition duration, the nanorod size could be successfully controlled. Most importantly, the results indicated that the photoluminescence (PL) properties reflect the quality of the ZnO nanorods. These parameters can change the material’s structure from one-dimensional to two-dimensional however the laser energy and frequency affect the size and the height of the nanorods; the xygen pressure changes the density of the nanorods.

  3. Room temperature growth of biaxially aligned yttria-stabilized zirconia films on glass substrates by pulsed-laser deposition

    CERN Document Server

    Li Peng; Mazumder, J

    2003-01-01

    Room temperature deposition of biaxially textured yttria-stabilized zirconia (YSZ) films on amorphous glass substrates was successfully achieved by conventional pulsed-laser deposition. The influence of the surrounding gases, their pressure and the deposition time on the structure of the films was studied. A columnar growth process was revealed based on the experimental results. The grown biaxial texture appears as a kind of substrate independence, which makes it possible to fabricate in-plane aligned YSZ films on various substrates.

  4. Fabrication and characterization of a cell electrostimulator device combining physical vapor deposition and laser ablation

    Science.gov (United States)

    Aragón, Angel L.; Pérez, Eliseo; Pazos, Antonio; Bao-Varela, Carmen; Nieto, Daniel

    2017-08-01

    In this work we present the process of fabrication and optimization of a prototype of a cell electrostimulator device for medical application combining physical vapor deposition and laser ablation. The fabrication of the first prototype begins with a deposition of a thin layer of 200 nm of aluminium on a borosilicate glass substrate using physical vapor deposition (PVD). In the second stage the geometry design of the electrostimulator is made in a CAD-like software available in a Nd:YVO4 Rofin Power line 20E, operating at the fundamental wavelength of 1064 nm and 20 ns pulse width. Choosing the proper laser parameters the negative of the electrostimulator desing is ablated. After that the glass is assembled between two polycarbonate sheets and a thick sheet of polydimethylsiloxane (PDMS). The PDMS sheet has a round hole in where cells are placed. There is also included a thin soda-lime silicate glass (100 μm) between the electrostimulator and the PMDS to prevent the cells for being in contact with the electric circuit. In order to control the electrical signal applied to the electrostimulator is used a digital I/O device from National Instruments (USB-6501) which provides 5 V at the output monitored by a software programmed in LabVIEW. Finally, the optical and electrical characterization of the cell electrostimulator device is presented.

  5. Gold nanoparticles and films produced by a laser ablation/gas deposition (LAGD) method

    International Nuclear Information System (INIS)

    Kawakami, Yuji; Seto, Takafumi; Yoshida, Toshinobu; Ozawa, Eiichi

    2002-01-01

    Gold nanoparticles have great potential for various nanoelectronic applications such as single electron transistors, an infrared absorption sensor and so on. It is very important to understand and control the size distribution of the particles for such a variety of applications. In this paper, we report the size distribution of gold nanoparticles and the relationship between the nanoparticle-films and the electrical property produced by a laser ablation method. Gold nanoparticle-films were prepared by a technique, which sprays nanoparticles on the substrate through a nozzle. We call it a gas deposition method. The nanoparticles were generated by the nanosecond pulsed Nd:YAG laser ablation of a gold substrate under a low-pressure inert gas atmosphere. The ambient pressure was changed to control the average size and their distribution. The particles produced in the generation chamber were transported by a helium carrier gas to the deposition chamber and deposited on a substrate to form the films composed of gold nanoparticles. The electrical resistivity of the generated gold nanoparticle-films on the glass substrates was measured using a four-probe method. The size distribution of the nanoparticles was examined using transmission electron microscopy (TEM) and a low-pressure differential mobility analyzer (LP-DMA). The relationship between the particle size and the electrical properties of each film made by the different synthesis conditions were analyzed. The electrical resistivity changed from the order of 10 -5 to 10 -1 Ω cm depending on the ambient pressure and the size distribution

  6. Models of WO x films growth during pulsed laser deposition at elevated pressures of reactive gas

    Science.gov (United States)

    Gnedovets, A. G.; Fominski, V. Y.; Nevolin, V. N.; Romanov, R. I.; Fominski, D. V.; Soloviev, A. A.

    2017-12-01

    The films of tungsten oxides were prepared by pulsed laser ablation of W target in a reactive gas atmosphere (air of laboratory humidity). Optical analysis and ion signal measurements for the laser plume allowed to recognise a threshold gas pressure that suppresses the deposition of non-scattered atomic flux from the plume. When the pressure exceeds about 40 Pa, the films grow due to the deposition of species that could be formed in collisions of W atoms with reactive molecules (e.g., O2). Kinetic Monte Carlo method was used for modelling film growth. Comparison of the model structures with the experimentally prepared films has shown that the growth mechanism of ballistic deposition at a pressure of 40 Pa could be changed on the diffusion limited aggregation at a pressure of ~100 Pa. Thus, a cauliflower structure of the film transformed to a web-like structure. For good correlation of experimental and model structures of WO x , a dimension of structural elements in the model should coincide with W-O cluster size.

  7. Regularly arranged indium islands on glass/molybdenum substrates upon femtosecond laser and physical vapor deposition processing

    Energy Technology Data Exchange (ETDEWEB)

    Ringleb, F.; Eylers, K.; Teubner, Th.; Boeck, T., E-mail: torsten.boeck@ikz-berlin.de [Leibniz-Institute for Crystal Growth, Max-Born-Straße 2, Berlin 12489 (Germany); Symietz, C.; Bonse, J.; Andree, S.; Krüger, J. [Bundesanstalt für Materialforschung und-prüfung (BAM), Unter den Eichen 87, Berlin 12205 (Germany); Heidmann, B.; Schmid, M. [Department of Physics, Freie Universität Berlin, Arnimalle 14, Berlin 14195 (Germany); Nanooptical Concepts for PV, Helmholtz Zentrum Berlin, Hahn-Meitner-Platz 1, Berlin 14109 (Germany); Lux-Steiner, M. [Nanooptical Concepts for PV, Helmholtz Zentrum Berlin, Hahn-Meitner-Platz 1, Berlin 14109 (Germany); Heterogeneous Material Systems, Helmholtz Zentrum Berlin, Hahn-Meitner-Platz 1, Berlin 14109 (Germany)

    2016-03-14

    A bottom-up approach is presented for the production of arrays of indium islands on a molybdenum layer on glass, which can serve as micro-sized precursors for indium compounds such as copper-indium-gallium-diselenide used in photovoltaics. Femtosecond laser ablation of glass and a subsequent deposition of a molybdenum film or direct laser processing of the molybdenum film both allow the preferential nucleation and growth of indium islands at the predefined locations in a following indium-based physical vapor deposition (PVD) process. A proper choice of laser and deposition parameters ensures the controlled growth of indium islands exclusively at the laser ablated spots. Based on a statistical analysis, these results are compared to the non-structured molybdenum surface, leading to randomly grown indium islands after PVD.

  8. Enhancement of coercivity with reduced grain size in CoCrPt film grown by pulsed laser deposition

    International Nuclear Information System (INIS)

    Liang, Q.; Hu, X.F.; Li, H.Q.; He, X.X.; Wang, Xiaoru; Zhang, W.

    2006-01-01

    We report a pulsed laser deposition (PLD) growth of VMn/CoCrPt bilayer with a magnetic coercivity (H c ) of 2.2 kOe and a grain size of 12 nm. The effects of VMn underlayer on magnetic properties of CoCrPt layer were studied. The coercivity, H c , and squareness, S, of VMn/CoCrPt bilayer, is dependent on the thickness of VMn. The grain size of the CoCrPt film can also be modified by laser parameters. High laser fluence used for CoCrPt deposition produces a smaller grain size. Enhanced H c and reduced grain size in VMn/CoCrPt is explained by more pronounced surface phase segregation during deposition at high laser fluence

  9. Observation of self-assembled periodic nano-structures induced by femtosecond laser in both ablation and deposition regimes

    Science.gov (United States)

    Tang, Mingzhen; Zhang, Haitao; Her, Tsing-Hua

    2008-02-01

    We observed the spontaneous formation of periodic nano-structures in both femtosecond laser ablation and deposition. The former involved 400-nm femtosecond pulses from a 250-KHz regenerated amplified mode-locked Ti:sapphire laser and periodic nanocracks and the nano-structure are in the form of periodic nanocracks in the substrate, the latter applied an 80-MHz mode-locked Ti:sapphire oscillator with pulse energy less than half nanojoule in a laser-induced chemical vapor deposition configuration and tungsten nanogratings grow heterogeneously on top of the substrates. These two observed periodic nanostructures have opposite orientations respecting to laser polarization: the periodic nanocracks are perpendicular to, whereas the deposited tungsten nanogratings are parallel to laser polarization direction. By translating the substrate respecting to the laser focus, both the periodic nanocrack and tungsten nanograting extend to the whole scanning range. The deposited tungsten nanogratings possess excellent uniformity on both the grating period and tooth length. Both the attributes can be tuned precisely by controlling the laser power and scanning speed. Furthermore, we discovered that the teeth of transverse tungsten nanogratings are self aligned along their axial direction during multiple scanning with appropriate offset between scans. We demonstrate the feasibility of fabricating large-area one-dimensional grating by exploiting such unique property. These distinct phenomena of nanocracks and tungsten nanogratings indicate different responsible mechanisms.

  10. Experimental Study of Direct Laser Deposition of Ti-6Al-4V and Inconel 718 by Using Pulsed Parameters

    Directory of Open Access Journals (Sweden)

    Kamran Shah

    2014-01-01

    Full Text Available Laser direct metal deposition (LDMD has developed from a prototyping to a single metal manufacturing tool. Its potential for creating multimaterial and functionally graded structures is now beginning to be explored. This work is a first part of a study in which a single layer of Inconel 718 is deposited on Ti-6Al-4V substrate. Single layer tracks were built at a range of powder mass flow rates using a coaxial nozzle and 1.5 kW diode laser operating in both continuous and pulsed beam modes. This part of the study focused on the experimental findings during the deposition of Inconel 718 powder on Ti-6Al-4V substrate. Scanning electron microscopy (SEM and X-ray diffraction analysis were performed for characterization and phase identification. Residual stress measurement had been carried out to ascertain the effects of laser pulse parameters on the crack development during the deposition process.

  11. Optical-optical double resonance, laser induced fluorescence, and revision of the signs of the spin-spin constants of the boron carbide (BC) free radical

    Science.gov (United States)

    Sunahori, Fumie X.; Nagarajan, Ramya; Clouthier, Dennis J.

    2015-12-01

    The cold boron carbide free radical (BC X 4Σ-) has been produced in a pulsed discharge free jet expansion using a precursor mixture of trimethylborane in high pressure argon. High resolution laser induced fluorescence spectra have been obtained for the B 4Σ--X 4Σ- and E 4Π-X 4Σ- band systems of both 11BC and 10BC. An optical-optical double resonance (OODR) scheme was implemented to study the finer details of both band systems. This involved pumping a single rotational level of the B state with one laser and then recording the various allowed transitions from the intermediate B state to the final E state with a second laser by monitoring the subsequent E-X ultraviolet fluorescence. In this fashion, we were able to prove unambiguously that, contrary to previous studies, the spin-spin constant λ is negative in the ground state and positive in the B 4Σ- excited state. It has been shown that λ″ expected based on a semiempirical second order perturbation theory calculation of the magnitude of the spin-spin constant. The OODR spectra have also been used to validate our assignments of the complex and badly overlapped E 4Π-X 4Σ- 0-0 and 1-0 bands of 11BC. The E-X 0-0 band of 10BC was found to be severely perturbed. The ground state main electron configuration is …3σ24σ25σ11π22π0 and the derived bond lengths show that there is a 0.03 Å contraction in the B state, due to the promotion of an electron from the 4σ antibonding orbital to the 5σ bonding orbital. In contrast, the bond length elongates by 0.15 Å in the E state, a result of promoting an electron from the 5σ bonding orbital to the 2π antibonding orbitals.

  12. Decoration of silica nanowires with gold nanoparticles through ultra-short pulsed laser deposition

    Science.gov (United States)

    Gontad, F.; Caricato, A. P.; Cesaria, M.; Resta, V.; Taurino, A.; Colombelli, A.; Leo, C.; Klini, A.; Manousaki, A.; Convertino, A.; Rella, R.; Martino, M.; Perrone, A.

    2017-10-01

    The ablation of a metal target at laser energy densities in the range of 1-10 TW/cm2 leads to the generation of nanoparticles (NP) of the ablated material. This aspect is of particular interest if the immobilization of NPs on three-dimensional (3D) substrates is necessary as for example in sensing applications. In this work the deposition of Au NP by irradiation of a Au bulk target with a sub-picosecond laser beam (500 fs; 248 nm; 10 Hz) on 2D (silica and Si(100)) and 3D substrates (silica nanowire forests) is reported for different number of laser pulses (500, 1000, 1500, 2000, 2500). A uniform coverage of small Au NPs (with a diameter of few nm) on both kinds of substrates has been obtained using a suitable number of laser pulses. The presence of spherical droplets, with a diameter ranging from tens of nm up to few μm was also detected on the substrate surface and their presence can be explained by the weak electron-phonon coupling of Au. The optical characterization of the samples on 2D and 3D substrates evidenced the surface plasmon resonance peak characteristic of the Au NPs although further improvements of the size-distribution are necessary for future applications in sensing devices.

  13. High-speed imaging and evolution dynamics of laser induced deposition of conductive inks (Conference Presentation)

    Science.gov (United States)

    Makrygianni, Marina; Papazoglou, Symeon; Zacharatos, Filimonas; Chatzandroulis, Stavros; Zergioti, Ioanna

    2017-02-01

    During the last decade there is an ever-increasing interest for the study of laser processes dynamics and specifically of the Laser Induced Forward Transfer (LIFT) technique, since the evolution of the phenomena under investigation may provide real time metrology in terms of jet velocity, adjacent jet interaction and impact pressure. The study of such effects leads to a more thorough understanding of the deposition process, hence to an improved printing outcome and in these frames, this work presents a study on the dynamics of LIFT for conductive nanoparticles inks using high-speed imaging approaches. Moreover, in this study, we investigated the printing regimes and the printing quality during the transfer of copper (Cu) nanoink, which is a metallic nanoink usually employed in interconnect formation as well as the printing of silver nanowires, which provide transparency and may be used in applications where transparent electrodes are needed as in photovoltaics, batteries, etc. Furthermore, we demonstrate the fabrication of an all laser printed resistive chemical sensor device that combines Ag nanoparticles ink and graphene oxide, for the detection of humidity fabricated on a flexible polyimide substrate. The sensor device architecture was able to host multiple pairs of electrodes, where Ag nanoink or nanopaste were laser printed, to form the electrodes as well as the electrical interconnections between the operating device and the printed circuit board. Performance evaluation was conducted upon flow of different concentrations of humidity vapors to the sensor, and good response (500 ppm limit of detection) with reproducible operation was observed.

  14. Influence of processing parameters on lattice parameters in laser deposited tool alloy steel

    Energy Technology Data Exchange (ETDEWEB)

    Sun, G.F., E-mail: gfsun82@gmail.com [Center for Laser-Aided Intelligent Manufacturing, University of Michigan, Ann Arbor, MI, 48109 (United States); School of Mechanical Engineering, Jiangsu University, Zhenjiang, Jiangsu, 212013 (China); Bhattacharya, S. [Center for Laser-Aided Intelligent Manufacturing, University of Michigan, Ann Arbor, MI, 48109 (United States); Dinda, G.P.; Dasgupta, A. [Center for Advanced Technologies, Focus: Hope, Detroit, MI, 48238 (United States); Mazumder, J. [Center for Laser-Aided Intelligent Manufacturing, University of Michigan, Ann Arbor, MI, 48109 (United States)

    2011-06-15

    Highlights: {yields} Orientation relationships among phases in the DMD are given. {yields} Martensite lattice parameters increased with laser specific energy. {yields} Austenite lattice parameters decreased with laser specific energy. - Abstract: Laser aided direct metal deposition (DMD) has been used to form AISI 4340 steel coating on the AISI 4140 steel substrate. The microstructural property of the DMD coating was analyzed by means of scanning electron microscopy, transmission electron microscopy and X-ray diffractometry. Microhardness of the DMD was measured with a Vickers microhardness tester. Results indicate that DMD can be used to form dense AISI 4340 steel coatings on AISI 4140 steel substrate. The DMD coating is mainly composed of martensite and retained austenite. Consecutive thermal cycles have a remarkable effect on the microstructure of the plan view of the DMD coating and on the corresponding microhardness distribution. Orientation relationships among austenite, martensite and cementite in the DMD coating followed the ones in conventional heat treated steels. As the laser specific energy decreased, cooling rate increased, and martensite peaks broadened and shifted to a lower Bragg's angle. Also martensite lattice parameters increased and austenite lattice parameters decreased due to the above parameter change.

  15. Influence of processing parameters on lattice parameters in laser deposited tool alloy steel

    International Nuclear Information System (INIS)

    Sun, G.F.; Bhattacharya, S.; Dinda, G.P.; Dasgupta, A.; Mazumder, J.

    2011-01-01

    Highlights: → Orientation relationships among phases in the DMD are given. → Martensite lattice parameters increased with laser specific energy. → Austenite lattice parameters decreased with laser specific energy. - Abstract: Laser aided direct metal deposition (DMD) has been used to form AISI 4340 steel coating on the AISI 4140 steel substrate. The microstructural property of the DMD coating was analyzed by means of scanning electron microscopy, transmission electron microscopy and X-ray diffractometry. Microhardness of the DMD was measured with a Vickers microhardness tester. Results indicate that DMD can be used to form dense AISI 4340 steel coatings on AISI 4140 steel substrate. The DMD coating is mainly composed of martensite and retained austenite. Consecutive thermal cycles have a remarkable effect on the microstructure of the plan view of the DMD coating and on the corresponding microhardness distribution. Orientation relationships among austenite, martensite and cementite in the DMD coating followed the ones in conventional heat treated steels. As the laser specific energy decreased, cooling rate increased, and martensite peaks broadened and shifted to a lower Bragg's angle. Also martensite lattice parameters increased and austenite lattice parameters decreased due to the above parameter change.

  16. Shape effect in FMR of Ni-Co-Mn-In layers obtained by pulsed laser deposition

    Directory of Open Access Journals (Sweden)

    Dubiel Łukasz

    2017-01-01

    Full Text Available We have studied thin layers of Ni50-xCoxMn50-yIny alloys on (001 Si substrate obtained by pulsed laser deposition method (PLD using YAG Nd3+ laser operating at second harmonic. The target was bulk Ni50-xCoxMn50-yIny (x = 5, y = 14.5 alloy prepared by induction melting of pure elements under argon atmosphere. Magnetic properties were investigated on Bruker X band EPR spectrometer (9.36 GHz at room temperature. The magnetic resonance spectrum consists of non-symmetric lines with resonance field within wide field range (2500-4800 Gs depending on the orientation of the static field in the plane perpendicular to the layer. Calculated spectroscopic splitting factor g = 2.09.

  17. Design of a chamber for deposit of thin films by laser ablation

    International Nuclear Information System (INIS)

    Chirino O, S.

    2001-01-01

    The present work has as purpose to design a vacuum chamber, to the one that is denominated chamber of ablation, in which were carried out deposits of thin films using the well-known technique as laser ablation. To fulfill the purpose, the work has been distributed in the following way: in the chapter 1 there are discussed the generalities of the technique of ablation laser for the obtaining of materials in form of thin film, in the chapter 2 the basic concepts of the vacuum technology are mentioned that includes among other things, systems to produce vacuum and vacuum gages and in the chapter 3 the design of the chamber is presented with the accessories and specific systems. (Author)

  18. Growth and etching characteristics of gallium oxide thin films by pulsed laser deposition

    International Nuclear Information System (INIS)

    Ou, Sin-Liang; Wuu, Dong-Sing; Fu, Yu-Chuan; Liu, Shu-Ping; Horng, Ray-Hua; Liu, Lei; Feng, Zhe-Chuan

    2012-01-01

    Highlights: ► The β-Ga2O3 thin films are prepared by pulsed laser deposition. ► The substrate temperature affects the structural, optical and etching properties of the grown films. ► The optical transmittance and band gap of the films increased with increasing the substrate temperature. ► The etching treatments for gallium oxide are performed in 49 mol% HF solution at room temperature. ► The gallium oxide thin film grown at 400 °C has the highest etching rate of 490 nm s −1 . - Abstract: The gallium oxide films were deposited on (0 0 1) sapphire at various substrate temperatures from 400 to 1000 °C by pulsed laser deposition using a KrF excimer laser. The etching treatments for as-grown gallium oxide were performed in a 49 mol% HF solution at room temperature. The structural, optical and etching properties of the grown films were investigated in terms of high resolution X-ray diffraction, optical transmittance, atomic force microscopy, and X-ray photoelectron spectroscopy. The phase transition from amorphous to polycrystalline β-Ga 2 O 3 structure was observed with increasing growth temperature. From the optical transmittance measurements, the films grown at 550–1000 °C exhibit a clear absorption edge at deep ultraviolet region around 250–275 nm wavelength. It was found that the optical band gap of gallium oxide films increased from 4.56 to 4.87 eV when the substrate temperature increased from 400 to 1000 °C. As the substrate temperature increases, the crystallinity of gallium oxide film is enhanced and the etching rate is decreased. The high etching rate of 490 nm s −1 for gallium oxide film grown at 400 °C could be due to its amorphous phase, which is referred to higher void ratio and looser atomic structure.

  19. Formation of copper tin sulfide films by pulsed laser deposition at 248 and 355 nm

    DEFF Research Database (Denmark)

    Ettlinger, Rebecca Bolt; Crovetto, Andrea; Canulescu, Stela

    2016-01-01

    The influence of the laser wavelength on the deposition of copper tin sulfide (CTS) and SnS-rich CTS with a 248-nm KrF excimer laser (pulse length τ = 20 ns) and a 355-nm frequency-tripled Nd:YAG laser (τ = 6 ns) was investigated. A comparative study of the two UV wavelengths shows that the CTS...... film growth rate per pulse was three to four times lower with the 248-nm laser than the 355-nm laser. SnS-rich CTS is more efficiently ablated than pure CTS. Films deposited at high fluence have submicron and micrometer size droplets, and the size and area density of the droplets do not vary significantly...

  20. TC17 titanium alloy laser melting deposition repair process and properties

    Science.gov (United States)

    Liu, Qi; Wang, Yudai; Zheng, Hang; Tang, Kang; Li, Huaixue; Gong, Shuili

    2016-08-01

    Due to the high manufacturing cost of titanium compressor blisks, aero engine repairing process research has important engineering significance and economic value. TC17 titanium alloy is a rich β stable element dual α+β phase alloy whose nominal composition is Ti-5Al-2Sn-2Zr-4Mo-4Cr. It has high mechanical strength, good fracture toughness, high hardenability and a wide forging-temperature range. Through a surface response experiment with different laser powers, scanning speeds and powder feeding speeds, the coaxial powder feeding laser melting deposition repair process is studied for the surface circular groove defects. In this paper, the tensile properties, relative density, microhardness, elemental composition, internal defects and microstructure of the laser-repaired TC17 forging plate are analyzed. The results show that the laser melting deposition process could realize the form restoration of groove defect; tensile strength and elongation could reach 1100 MPa and 10%, which could reach 91-98% that of original TC17 wrought material; with the optimal parameters (1000 W-25 V-8 mm/s), the microhardness of the additive zone, the heat-affected zone and base material is evenly distributed at 370-390 HV500. The element content difference between the additive zone and base material is less than ±0.15%. Due to the existence of the pores 10 μm in diameter, the relative density could reach 99%, which is mainly inversely proportional to the powder feeding speed. The repaired zone is typically columnar and dendrite crystal, and the 0.5-1.5 mm-deep heat-affected zone in the groove interface is coarse equiaxial crystal.

  1. Modeling of phase transformations of Ti6Al4 V during laser metal deposition

    Science.gov (United States)

    Suárez, A.; Tobar, M. J.; Yáñez, A.; Pérez, I.; Sampedro, J.; Amigó, V.; Candel, J. J.

    The low density, excellent high temperature mechanical properties and good corrosion resistance of titanium and its alloys have led to a diversified range of successful applications. As a consequence, there is a demand of increasing the capabilities of processing such alloys. The laser cladding technique allows direct metal deposition with an excellent metallurgical bond and a pore free fine grained microstructure. A nonlinear transient thermo-metallurgical model was developed to study the technique with titanium alloys to get a better understanding of the thermal and metallurgical underlying aspects. The calculated temperatures and phase transformations are compared with experimental tests.

  2. Monitoring of the morphologic reconstruction of deposited ablation products in laser irradiation of silicon

    Directory of Open Access Journals (Sweden)

    Vlasova M.

    2008-01-01

    Full Text Available Using electron microscopy, atomic force microscopy, X-ray microanalysis, and IR spectroscopy, it was established that, in the regime of continuous laser irradiation of silicon at P = 170 W in different gaseous atmospheres with an oxygen impurity, SiOx composite films with a complex morphology form. The main components of ablation products are clusters that form during flight of ablation products and as a result of separation of SiOx-clusters from the zone of the irradiation channel. The roughness and density of the films depend on the heating temperature of the target surface and the type of deposited clusters.

  3. Synthesis of nanostructured SiC using the pulsed laser deposition technique

    International Nuclear Information System (INIS)

    Zhang, H.X.; Feng, P.X.; Makarov, V.; Weiner, B.R.; Morell, G.

    2009-01-01

    We report the new results on the direct synthesis of nanostructured silicon carbide (SiC) materials using the pulsed laser deposition technique. Scanning electron microscopy images revealed that SiC nanoholes, nanosprouts, nanowires, and nanoneedles were obtained. The crystallographic structure, chemical composition, and bond structure of the nanoscale SiC materials were investigated using X-ray diffraction, energy dispersive X-ray spectroscopy, X-ray photoelectron spectroscopy, and Raman scattering spectroscopy. The transverse optical mode and longitudinal optical mode in Raman spectra were found to become sharper as the substrate temperature was increased, while the material structure evolved from amorphous to crystalline

  4. Si nanostructures grown by picosecond high repetition rate pulsed laser deposition

    International Nuclear Information System (INIS)

    Pervolaraki, M.; Komninou, Ph.; Kioseoglou, J.; Athanasopoulos, G.I.; Giapintzakis, J.

    2013-01-01

    One-step growth of n-doped Si nanostructures by picosecond ultra fast pulsed laser deposition at 1064 nm is reported for the first time. The structure and morphology of the Si nanostructures were characterized by X-ray diffraction, scanning electron microscopy and atomic force microscopy. Transmission electron microscopy studies revealed that the shape of the Si nanostructures depends on the ambient argon pressure. Fibrous networks, cauliflower formations and Si rectangular crystals grew when argon pressure of 300 Pa, 30 Pa and vacuum (10 −3 Pa) conditions were used, respectively. In addition, the electrical resistance of the vacuum made material was investigated

  5. Molecular beam and pulsed laser deposition of ZnS:Cr for intermediate band solar cells

    OpenAIRE

    Nematollahi, Mohammadreza; Yang, Xiaodong; Aas, Lars Martin Sandvik; Ghadyani, Zahra; Kildemo, Morten; Gibson, Ursula; Reenaas, Turid Worren

    2015-01-01

    We have investigated the structural and optical properties of Cr-doped ZnS (ZnS:Cr) thin films (0–7.5 at.% Cr) for use in intermediate band solar cells. The films were grown on Si(100) in molecular beam epitaxy (MBE) and pulsed laser deposition (PLD) equipments. Introducing Cr into ZnS resulted in Cr related subbandgap absorption, but also reduced the grain size. The sub-bandgap absorption increased with increasing Cr content, and with increasing growth temperature, but did not depend on the ...

  6. Structural characterization of ZnO thin films grown on various substrates by pulsed laser deposition

    Czech Academy of Sciences Publication Activity Database

    Novotný, Michal; Čížek, J.; Kužel, R.; Bulíř, Jiří; Lančok, Ján; Connolly, J.; McCarthy, E.; Krishnamurthy, S.; Mosnier, J.-P.; Anwand, W.; Brauer, G.

    2012-01-01

    Roč. 45, č. 22 (2012), 1-12 ISSN 0022-3727 R&D Projects: GA ČR(CZ) GAP108/11/0958; GA ČR GP202/09/P324 Institutional research plan: CEZ:AV0Z10100522 Keywords : ZnO thin film * pulsed laser deposition * x-ray diffraction positron implantation spectroscopy Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.528, year: 2012 http://dx.doi.org/10.1088/0022-3727/45/22/225101

  7. Model of depositing layer on cylindrical surface produced by induction-assisted laser cladding process

    Directory of Open Access Journals (Sweden)

    Kotlan Václav

    2017-12-01

    Full Text Available A model of hybrid cladding on a cylindrical surface is built and numerically solved. Heating of both substrate and the powder material to be deposited on its surface is realized by laser beam and preheating inductor. The task represents a hard-coupled electromagnetic-thermal problem with time-varying geometry. Two specific algorithms are developed to incorporate this effect into the model, driven by local distribution of temperature and its gradients. The algorithms are implemented into the COMSOL Multiphysics 5.2 code that is used for numerical computations of the task. The methodology is illustrated with a typical example whose results are discussed.

  8. Micro-scale mechanical characterization of Inconel cermet coatings deposited by laser cladding

    OpenAIRE

    Chao Chang; Davide Verdi; Miguel Angel Garrido; Jesus Ruiz-Hervias

    2016-01-01

    In this study, an Inconel 625-Cr3C2 cermet coating was deposited on a steel alloy by laser cladding. The elastic and plastic mechanical properties of the cermet matrix were studied by the depth sensing indentation (DSI) in the micro scale. These results were compared with those obtained from an Inconel 600 bulk specimen. The values of Young's modulus and hardness of cermet matrix were higher than those of an Inconel 600 bulk specimen. Meanwhile, the indentation stress–strain curve of the cerm...

  9. State of residual stress in laser-deposited ceramic composite coatings on aluminum alloys

    OpenAIRE

    Kadolkar, P. B.; Watkins, T. R.; De Hosson, J. Th. M.; Kooi, B. J.; Dahotre, N. B.

    2007-01-01

    The nature and magnitude of the residual stresses within laser-deposited titanium carbide (TiC) coatings on 2024 and 6061 aluminum (Al) alloys were investigated. Macro- and micro-stresses within the coatings were determined using an X-ray diffraction method. Owing to increased debonding between the coating and the substrate, the macro-stresses were found to be compressive and to decrease in magnitude with increasing processing speed. The origin of the macro- and micro-stresses is discussed. T...

  10. Si nanostructures grown by picosecond high repetition rate pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Pervolaraki, M., E-mail: pervolaraki@ucy.ac.cy [Nanotechnology Research Center and Department of Mechanical and Manufacturing Engineering, University of Cyprus, 75 Kallipoleos Av., PO Box 20537, 1678 Nicosia (Cyprus); Komninou, Ph.; Kioseoglou, J. [Department of Physics, Aristotle University of Thessaloniki, GR-54124 Thessaloniki (Greece); Athanasopoulos, G.I. [Nanotechnology Research Center and Department of Mechanical and Manufacturing Engineering, University of Cyprus, 75 Kallipoleos Av., PO Box 20537, 1678 Nicosia (Cyprus); Giapintzakis, J., E-mail: giapintz@ucy.ac.cy [Nanotechnology Research Center and Department of Mechanical and Manufacturing Engineering, University of Cyprus, 75 Kallipoleos Av., PO Box 20537, 1678 Nicosia (Cyprus)

    2013-08-01

    One-step growth of n-doped Si nanostructures by picosecond ultra fast pulsed laser deposition at 1064 nm is reported for the first time. The structure and morphology of the Si nanostructures were characterized by X-ray diffraction, scanning electron microscopy and atomic force microscopy. Transmission electron microscopy studies revealed that the shape of the Si nanostructures depends on the ambient argon pressure. Fibrous networks, cauliflower formations and Si rectangular crystals grew when argon pressure of 300 Pa, 30 Pa and vacuum (10{sup −3} Pa) conditions were used, respectively. In addition, the electrical resistance of the vacuum made material was investigated.

  11. Pulsed laser deposition of transparent conductive oxide thin films on flexible substrates

    Science.gov (United States)

    Socol, G.; Socol, M.; Stefan, N.; Axente, E.; Popescu-Pelin, G.; Craciun, D.; Duta, L.; Mihailescu, C. N.; Mihailescu, I. N.; Stanculescu, A.; Visan, D.; Sava, V.; Galca, A. C.; Luculescu, C. R.; Craciun, V.

    2012-11-01

    The influence of target-substrate distance during pulsed laser deposition of indium zinc oxide (IZO), indium tin oxide (ITO) and aluminium-doped zinc oxide (AZO) thin films grown on polyethylene terephthalate (PET) substrates was investigated. It was found that the properties of such flexible transparent conductive oxide (TCO)/PET electrodes critically depend on this parameter. The TCO films that were deposited at distances of 6 and 8 cm exhibited an optical transmittance higher than 90% in the visible range and electrical resistivities around 5 × 10-4 Ω cm. In addition to these excellent electrical and optical characteristics the films grown at 8 cm distance were homogenous, smooth, adherent, and without cracks or any other extended defects, being suitable for opto-electronic device applications.

  12. Highly conducting and transparent Ti-doped CdO films by pulsed laser deposition

    International Nuclear Information System (INIS)

    Gupta, R.K.; Ghosh, K.; Patel, R.; Kahol, P.K.

    2009-01-01

    Titanium-doped cadmium oxide thin films were deposited on quartz substrate by pulsed laser deposition technique. The effect of substrate temperature on structural, optical and electrical properties was studied. The films grown at high temperature show (2 0 0) preferred orientation, while films grown at low temperature have both (1 1 1) and (2 0 0) orientation. These films are highly transparent (63-79%) in visible region, and transmittance of the films depends on growth temperature. The band gap of the films varies from 2.70 eV to 2.84 eV for various temperatures. It is observed that resistivity increases with growth temperature after attaining minimum at 150 deg. C, while carrier concentration continuously decreases with temperature. The low resistivity, high transmittance and wide band gap titanium-doped CdO films could be an excellent candidate for future optoelectronic and photovoltaic applications.

  13. Functionalized porphyrin conjugate thin films deposited by matrix assisted pulsed laser evaporation

    Energy Technology Data Exchange (ETDEWEB)

    Iordache, S. [University of Bucharest, 3Nano-SAE Research Center, PO Box MG-38, Bucharest-Magurele (Romania); Cristescu, R., E-mail: rodica.cristescu@inflpr.ro [National Institute for Lasers, Plasma and Radiation Physics, Lasers Department, P.O. Box MG-36, Bucharest-Magurele (Romania); Popescu, A.C.; Popescu, C.E.; Dorcioman, G.; Mihailescu, I.N. [National Institute for Lasers, Plasma and Radiation Physics, Lasers Department, P.O. Box MG-36, Bucharest-Magurele (Romania); Ciucu, A.A. [University of Bucharest, Faculty of Chemistry, Bucharest (Romania); Balan, A.; Stamatin, I. [University of Bucharest, 3Nano-SAE Research Center, PO Box MG-38, Bucharest-Magurele (Romania); Fagadar-Cosma, E. [Institute of Chemistry Timisoara of Romanian Academy, M. Viteazul Ave. 24, 300223-Timisoara (Romania); Chrisey, D.B. [Tulane University, Departments of Physics and Biomedical Engineering, New Orleans, LA 70118 (United States)

    2013-08-01

    We report on the deposition of nanostructured porphyrin-base, 5(4-carboxyphenyl)-10,15,20-tris(4-phenoxyphenyl)-porphyrin thin films by matrix assisted pulsed laser evaporation onto silicon substrates with screen-printed electrodes. AFM investigations have shown that at 400 mJ/cm{sup 2} fluence a topographical transition takes place from the platelet-like stacking porphyrin-based nanostructures in a perpendicular arrangement to a quasi-parallel one both relative to the substrate surface. Raman spectroscopy has shown that the chemical structure of the deposited thin films is preserved for fluences within the range of 200–300 mJ/cm{sup 2}. Cyclic voltammograms have demonstrated that the free porphyrin is appropriate as a single mediator for glucose in a specific case of screen-printed electrodes, suggesting potential for designing a new class of biosensors.

  14. Compositional and structural properties of pulsed laser-deposited ZnS:Cr films

    Science.gov (United States)

    Nematollahi, Mohammadreza; Yang, Xiaodong; Seim, Eivind; Vullum, Per Erik; Holmestad, Randi; Gibson, Ursula J.; Reenaas, Turid W.

    2016-02-01

    We present the properties of Cr-doped zinc sulfide (ZnS:Cr) films deposited on Si(100) by pulsed laser deposition. The films are studied for solar cell applications, and to obtain a high absorption, a high Cr content (2.0-5.0 at.%) is used. It is determined by energy-dispersive X-ray spectroscopy that Cr is relatively uniformly distributed, and that local Cr increases correspond to Zn decreases. The results indicate that most Cr atoms substitute Zn sites. Consistently, electron energy loss and X-ray photoelectron spectroscopy showed that the films contain mainly Cr2+ ions. Structural analysis showed that the films are polycrystalline and textured. The films with ~4 % Cr are mainly grown along the hexagonal [001] direction in wurtzite phase. The average lateral grain size decreases with increasing Cr content, and at a given Cr content, increases with increasing growth temperature.

  15. Optical, compositional and structural properties of pulsed laser deposited nitrogen-doped Titanium-dioxide

    Science.gov (United States)

    Farkas, B.; Heszler, P.; Budai, J.; Oszkó, A.; Ottosson, M.; Geretovszky, Zs.

    2018-03-01

    N-doped TiO2 thin films were prepared using pulsed laser deposition by ablating metallic Ti target with pulses of 248 nm wavelength, at 330 °C substrate temperature in reactive atmospheres of N2/O2 gas mixtures. These films were characterized by spectroscopic ellipsometry, X-ray photoelectron spectroscopy and X-ray diffraction. Optical properties are presented as a function of the N2 content in the processing gas mixture and correlated to nitrogen incorporation into the deposited layers. The optical band gap values decreased with increasing N concentration in the films, while a monotonically increasing tendency and a maximum can be observed in case of extinction coefficient and refractive index, respectively. It is also shown that the amount of substitutional N can be increased up to 7.7 at.%, but the higher dopant concentration inhibits the crystallization of the samples.

  16. Quantitative TEM analysis of Al/Cu multilayer systems prepared by pulsed laser deposition

    DEFF Research Database (Denmark)

    Liu, Haihua; Pryds, Nini; Schou, Jørgen

    2010-01-01

    Thin films composed of alternating Al/Cu/Al layers were deposited on a (111) Si substrate using pulsed laser deposition (PLD). The thicknesses of the film and the individual layers, and the detailed internal structure within the layers were characterized by means of transmission electron microscopy...... for the formation of the first layer of nano-sized Al grains. The results demonstrate that the PLD technique is a powerful tool to produce nano-scale multilayered metal films with controllable thickness and grain sizes....... (TEM), high-resolution TEM (HRTEM), and energy-filtered TEM (EFTEM). Each Al or Cu layer consists of a single layer of nano-sized grains of different orientations. EFTEM results revealed a layer of oxide about 2 nm thick on the surface of the Si substrate, which is considered to be the reason...

  17. Raman spectroscopy of ZnMnO thin films grown by pulsed laser deposition

    Science.gov (United States)

    Orozco, S.; Riascos, H.; Duque, S.

    2016-02-01

    ZnMnO thin films were grown by Pulsed Laser Deposition (PLD) technique onto Silicon (100) substrates at different growth conditions. Thin films were deposited varying Mn concentration, substrate temperature and oxygen pressure. ZnMnO samples were analysed by using Raman Spectroscopy that shows a red shift for all vibration modes. Raman spectra revealed that nanostructure of thin films was the same of ZnO bulk, wurzite hexagonal structure. The structural disorder was manifested in the line width and shape variations of E2(high) and E2(low) modes located in 99 and 434cm-1 respectively, which may be due to the incorporation of Mn ions inside the ZnO crystal lattice. Around 570cm-1 was found a peak associated to E1(LO) vibration mode of ZnO. 272cm-1 suggest intrinsic host lattice defects. Additional mode centred at about 520cm-1 can be overlap of Si and Mn modes.

  18. Laser deposition of resonant silicon nanoparticles on perovskite for photoluminescence enhancement

    Science.gov (United States)

    Tiguntseva, E. Y.; Zalogina, A. S.; Milichko, V. A.; Zuev, D. A.; Omelyanovich, M. M.; Ishteev, A.; Cerdan Pasaran, A.; Haroldson, R.; Makarov, S. V.; Zakhidov, A. A.

    2017-11-01

    Hybrid lead halide perovskite based optoelectronics is a promising area of modern technologies yielding excellent characteristics of light emitting diodes and lasers as well as high efficiencies of photovoltaic devices. However, the efficiency of perovskite based devices hold a potential of further improvement. Here we demonstrate high photoluminescence efficiency of perovskites thin films via deposition of resonant silicon nanoparticles on their surface. The deposited nanoparticles have a number of advances over their plasmonic counterparts, which were applied in previous studies. We show experimentally the increase of photoluminescence of perovskite film with the silicon nanoparticles by 150 % as compared to the film without the nanoparticles. The results are supported by numerical calculations. Our results pave the way to high throughput implementation of low loss resonant nanoparticles in order to create highly effective perovskite based optoelectronic devices.

  19. Apparatus and method for pulsed laser deposition of materials on wires and pipes

    Science.gov (United States)

    Fernandez, Felix E.

    2003-01-01

    Methods and apparatuses are disclosed which allow uniform coatings to be applied by pulsed laser deposition (PLD) on inner and outer surfaces of cylindrical objects, such as rods, pipes, tubes, and wires. The use of PLD makes this technique particularly suitable for complex multicomponent materials, such as superconducting ceramics. Rigid objects of any length, i.e., pipes up to a few meters, and with diameters from less than 1 centimeter to over 10 centimeters can be coated using this technique. Further, deposition is effected simultaneously onto an annular region of the pipe wall. This particular arrangement simplifies the apparatus, reduces film uniformity control difficulties, and can result in faster operation cycles. In addition, flexible wires of any length can be continuously coated using the disclosed invention.

  20. Pulsed laser deposition of yttrium photocathode suitable for use in radio-frequency guns

    Science.gov (United States)

    Lorusso, A.; Trovò, M.; Demidovich, A.; Cinquegrana, P.; Gontad, F.; Broitman, E.; Chiadroni, E.; Perrone, A.

    2017-12-01

    Yttrium (Y) thin film was grown by pulsed laser deposition (PLD) on a copper (Cu) polycrystalline substrate. Ex situ morphological and structural characterisations of the circular Y film of 1.2 µm thickness and 3 mm diameter have shown a very low droplet density on the film surface and a crystalline feature with a preferred orientation along the Y (100) plane. Moreover, Y thin film resulted in being very adherent to the Cu substrate and more scratch resistant than Cu bulk. A twin thin film was deposited also on a Cu backflange of a radio-frequency (RF) gun to test the suitability of the metallic thin film as photocathode. It was observed that the Y-coated photocathode was characterised by a quantum efficiency ( QE) higher than that of the Cu bulk photocathode even if the presence of space charge effects didn't allow deriving the absolute maximum value of QE of Y photocathode.