Kinetics of chemical vapor deposition of boron on molybdenum

International Nuclear Information System (INIS)

Tanaka, H.; Nakanishi, N.; Kato, E.

1987-01-01

Experimental rate data of chemical vapor deposition of boron by reduction of boron trichloride with hydrogen are analyzed to determine the reaction mechanism. The experiments were conducted at atmospheric pressure. The weight change of the sample was noted by means of a thermobalance. Molybdenum was used as the substrate. It has been found that the outer layer of the deposited film is Mo/sub 2/B/sub 5/ and the inner layer is MoB, and in the stational state of the reaction, the diffusion in the solid state is considered not to be rate controlling. When mass transport limitation was absent, the reaction orders with respect to boron trichloride and hydrogen were one third and one half, respectively. By comparing these orders with those obtained from Langmuir-Hinshelwood type equations, the rate controlling mechanism is identified to be the desorption of hydrogen chloride from the substrate

CVD boron nitride infiltration of fibrous structures: properties of low temprature deposits

International Nuclear Information System (INIS)

Gebhardt, J.J.

1973-01-01

The pyrolytic infiltration of boron nitride and silica fibrous structures with boron nitride was investigated using the thermal decomposition of B-trichloroborazole (TCB) to provide the matrix surrounding felted and 4-directional braided constructions. The deposition precursor was generated on a continuous basis by the reaction between boron trichloride and ammonium chloride in a fixed bed reactor under conditions of total conversion of the trichloride: 3BCl 3 + 3NH 4 Cl = B 3 N 3 H 3 Cl 3 + 9HCl. Deposition rates in boron nitride felt specimens varied between 8 and 28 μm/h, depending on the distance from the exterior surface at the minimum deposition temperature used (1100 0 C ). Infiltration of 4-directional silica braids was poorer because of clogging of the fiber bundle surfaces and access paths to voids in the weave. Deposits prepared at 1100 0 C and above were stable to moisture and consisted of glassy transparent materials which had no discernible x-ray diffraction pattern. Heat treatment of low temperature deposits in nitrogen at 1800 0 C caused significant growth of the crystallites and the emergence of x-ray patterns characteristic of hexagonal boron nitride. Heat treatment in vacuum caused changes in the infrared spectrum which could be correlated with mass analyses of the gases evolved. Loss of hydrogen with amines predominated to about 1500 0 C above which point the loss of nitrogen became significant. (14 figures) (U.S.)

Boron- and iron-bearing molecules in laser-induced plasma

Energy Technology Data Exchange (ETDEWEB)

Gaft, M.; Nagli, L.; Eliezer, N.; Groisman, Y.

2015-08-01

Boron combines with alkali-earth elements, such as Ca, Mg, and Sr and with oxygen to form molecules in LIP of boron-bearing minerals with strong and characteristic band emission. It may be supposed that those bands are of CaBO{sub 2}, MgBO{sub 2} and SrBO{sub 2} type. Besides, emission of BO, BO{sub 2} and FeO is also detected. - Highlights: • We studied laser-induced breakdown spectra of B with Ca, Mg and Sr in air. • Emission of polyatomic molecules was found. • Molecules of FeO were found in laser-induced plasma in air.

Electronic response of a photodiode coupled to a boron thin film

Energy Technology Data Exchange (ETDEWEB)

Costa, Priscila; Costa, Fabio E.; Raele, Marcus P.; Zahn, Guilherme S.; Geraldo, Bianca; Vieira Junior, Nilson D.; Samad, Ricardo E.; Genezini, Frederico A., E-mail: priscila3.costa@usp.br, E-mail: fredzini@ipen.br [Instituto de Pesquisas Energéticas e Nucleares (IPEN/CNEN-SP), São Paulo, SP (Brazil)

2017-07-01

A portable thermal neutron detector is proposed in this work using a silicon photodiode coupled to a boron thin film. The aim of this work was to verify the effect in the electronic response of this specific photodiode due to boron deposition, since the direct deposition of boron in the semiconductor surface could affect its electrical properties specifically the p-type layer that affects directly the depletion region of the semiconductor reducing the neutron detector efficiency count. Three boron depositions with different thickness were performed in the photodiode (S3590-09) surface by pulsed laser deposition and the photodiode was characterized, before and after the deposition process, using a radioactive americium source. Energy spectra were used to verify the electronic response of the photodiode, due to the fact that it is possible to relate it to the photopeak pulse height and resolution. Spectra from the photodiode without and with boron film deposition were compared and a standard photodiode (S3590-04) that had the electronic signal conserved was used as reference to the pulse height for electronics adjustments. The photopeak energy resolution for the photodiode without boron layer was 10.26%. For the photodiode with boron deposition at different thicknesses, the resolution was: 7.64 % (0.14 μm), 7.30 % (0.44 μm) and 6.80 % (0.63 μm). From these results it is possible to evaluate that there was not any degradation in the silicon photodiode. (author)

Effects of heat treatment on the microstructure of amorphous boron carbide coating deposited on graphite substrates by chemical vapor deposition

International Nuclear Information System (INIS)

Li Siwei; Zeng Bin; Feng Zude; Liu Yongsheng; Yang Wenbin; Cheng Laifei; Zhang Litong

2010-01-01

A two-layer boron carbide coating is deposited on a graphite substrate by chemical vapor deposition from a CH 4 /BCl 3 /H 2 precursor mixture at a low temperature of 950 o C and a reduced pressure of 10 KPa. Coated substrates are annealed at 1600 o C, 1700 o C, 1800 o C, 1900 o C and 2000 o C in high purity argon for 2 h, respectively. Structural evolution of the coatings is explored by electron microscopy and spectroscopy. Results demonstrate that the as-deposited coating is composed of pyrolytic carbon and amorphous boron carbide. A composition gradient of B and C is induced in each deposition. After annealing, B 4 C crystallites precipitate out of the amorphous boron carbide and grow to several hundreds nanometers by receiving B and C from boron-doped pyrolytic carbon. Energy-dispersive spectroscopy proves that the crystallization is controlled by element diffusion activated by high temperature annealing, after that a larger concentration gradient of B and C is induced in the coating. Quantified Raman spectrum identifies a graphitization enhancement of pyrolytic carbon. Transmission electron microscopy exhibits an epitaxial growth of B 4 C at layer/layer interface of the annealed coatings. Mechanism concerning the structural evolution on the basis of the experimental results is proposed.

Preparation of high-pressure phase boron nitride films by physical vapor deposition

CERN Document Server

Zhu, P W; Zhao, Y N; Li, D M; Liu, H W; Zou Guang Tian

2002-01-01

The high-pressure phases boron nitride films together with cubic, wurtzic, and explosive high-pressure phases, were successfully deposited on the metal alloy substrates by tuned substrate radio frequency magnetron sputtering. The percentage of cubic boron nitride phase in the film was about 50% as calculated by Fourier transform infrared measurements. Infrared peak position of cubic boron nitride at 1006.3 cm sup - sup 1 , which is close to the stressless state, indicates that the film has very low internal stress. Transition electron microscope micrograph shows that pure cubic boron nitride phase exits on the surface of the film. The growth mechanism of the BN films was also discussed.

Laser-time resolved fluorimetric determination of trace of boron in U3O8

International Nuclear Information System (INIS)

Xu Yongyuan; Wang Yulong; Wang Qin

1988-01-01

In this work, a laser-time resolved fluorimetric determinatin of trace of boron in U 3 O 8 had been developed. The boron complex with dibenzoyl methane (DBM) in a suitable medium is excited by a small nitrogen laser and emits the delay fluorescence with lifetime of 2 ms which is much longer than that of the fluorescence of uranium. Since the fluorescence of uranium doesn't interfere with determination of boron in the time resolved fluorimetric method boron need not be separated from uranium in advance. Thus the determination is very rapid and simple. The limit of determination is 0.02 ngB/ml. When 10 mgU is taken, 0.01 ppm of boron in uranium can be determined. Several samples of U 3 O 8 with boron content from 0.04 to 0.5 ppm have been determined by using this method. The results of determination have been accordant with other methods

Preparation and electrical properties of boron and boron phosphide films obtained by gas source molecular beam deposition

Energy Technology Data Exchange (ETDEWEB)

Kumashiro, Y.; Yokoyama, T.; Sakamoto, T.; Fujita, T. [Yokohama National Univ. (Japan)

1997-10-01

Boron and boron phosphide films were prepared by gas source molecular beam deposition on sapphire crystal at various substrate temperatures up to 800{degrees}C using cracked B{sub 2}H{sub 6} (2% in H{sub 2}) at 300{degrees}C and cracked PH{sub 3} (20% in H{sub 2}) at 900{degrees}C. The substrate temperatures and gas flow rates of the reactant gases determined the film growth. The boron films with amorphous structure are p type. Increasing growth times lead to increasing mobilities and decreasing carrier concentrations. Boron phosphide film with maximum P/B ratio is obtained at a substrate temperature of 600{degrees}C, below and above which they become phosphorous deficient due to insufficient supply of phosphorus and thermal desorption of the phosphorus as P{sub 2}, respectively, but they are all n type conductors due to phosphorus vacancies.

Investigation of the Microstructure of Laser-Arc Hybrid Welded Boron Steel

Science.gov (United States)

Son, Seungwoo; Lee, Young Ho; Choi, Dong-Won; Cho, Kuk-Rae; Shin, Seung Man; Lee, Youngseog; Kang, Seong-Hoon; Lee, Zonghoon

2018-05-01

The microstructure of boron steel for automotive driving shaft manufacturing after laser-arc hybrid welding was investigated. Laser-arc hybrid welding technology was applied to 3-mm-thick plates of boron steel, ST35MnB. The temperature distribution of the welding pool was analyzed using the finite element method, and the microstructure of the welded boron steel was characterized using optical microscopy and scanning and transmission electron microscopies. The microstructure of the weld joint was classified into the fusion zone, the heat-affected zone (HAZ), and the base material. At the fusion zone, the bainite grains exist in the martensite matrix and show directionality because of heat input from the welding. The HAZ is composed of smaller grains, and the hardness of the HAZ is greater than that of the fusion zone. We discuss that the measured grain size and the hardness of the HAZ originate from undissolved precipitates that retard the grain growth of austenite.

Detection of boron in simulated corrosion products by using a laser induced breakdown spectroscopy

International Nuclear Information System (INIS)

Song, K.; Yeon, J-W.; Jung, S-H.; Hwang, J.; Jung, E-C.

2010-01-01

In nuclear power plants, many methods for detection of coolant leakage have been developed and employed for the safe operation. However, these methods have many limitations for analyzing and dealing with the corrosion products due to the high radioactivity. LIBS (Laser-induced breakdown spectroscopy) offer a remote and on-site elemental analysis including the boron in the corrosion products with no sample preparation. In this study, we investigated the feasibility of detecting boron and analyzing an elemental composition of boron-containing iron oxides with the LIBS, in order to develop a coolant leakage detection system. First, we prepared five different boron-containing iron oxides and the element ratios were determined by using ICP-AES (inductive coupled plasma-atomic emission spectrometer). After this, the laser induced emission spectra of these iron oxides were obtained by using a 266 nm Nd:YAG laser. The B/Fe ratios of the oxides were determined by comparing the intensities of the B emission peak at 249.844 nm with those of the Fe peak at 250.217 nm as an internal reference. It was confirmed that the B contents in the oxides could be analyzed over 0.1 wt% by the laser induced breakdown spectroscopic technique. (author)

CO2 Laser Cutting of Hot Stamping Boron Steel Sheets

OpenAIRE

Pasquale Russo Spena

2017-01-01

This study investigates the quality of CO2 laser cutting of hot stamping boron steel sheets that are employed in the fabrication of automotive body-in-white. For this purpose, experimental laser cutting tests were conducted on 1.2 mm sheets at varying levels of laser power, cutting speed, and oxygen pressure. The resulting quality of cut edges was evaluated in terms of perpendicularity tolerance, surface irregularity, kerf width, heat affected zone, and dross extension. Experimental tests wer...

Dependence of reaction pressure on deposition and properties of boron-doped freestanding diamond films

International Nuclear Information System (INIS)

Li Liuan; Li Hongdong; Lue Xianyi; Cheng Shaoheng; Wang Qiliang; Ren Shiyuan; Liu Junwei; Zou Guangtian

2010-01-01

In this paper, we investigate the reaction pressure-dependent growth and properties of boron-doped freestanding diamond films, synthesized by hot filament chemical vapor deposition (HFCVD) at different boron-doping levels. With the decrease in pressure, the growth feature of the films varies from mixed [1 1 1] and [1 1 0] to dominated [1 1 1] texture. The low reaction pressure, as well as high boron-doping level, results in the increase (decrease) of carrier concentration (resistivity). The high concentration of atomic hydrogen in the ambient and preferable [1 1 1] growth, due to the low reaction pressure, is available for the enhancement of boron doping. The estimated residual stress increases with increase in the introducing boron level.

Investigation of optimized experimental parameters including laser wavelength for boron measurement in photovoltaic grade silicon using laser-induced breakdown spectroscopy

International Nuclear Information System (INIS)

Darwiche, S.; Benmansour, M.; Eliezer, N.; Morvan, D.

2010-01-01

The quantification of boron and other impurities in photovoltaic grade silicon was investigated using the LIBS technique with attention to the laser wavelength employed, temporal parameters, and the nature of the ambient gas. The laser wavelength was found to have a moderate effect on the performance of the process, while the type of purge gas and temporal parameters had a strong effect on the signal-to-background ratio (SBR) of the boron spectral emission, which was used to determine the boron concentration in silicon. The three parameters are not independent, meaning that for each different purge gas, different optimal temporal parameters are observed. Electron density was also calculated from Stark broadening of the 390.5 nm silicon emission line in order to better understand the different performances observed when using different gases and gating parameters. Calibration curves were made for boron measurement in silicon using certified standards with different purge gases while using the temporal parameters which had been optimized for that gas. By comparing the calibration curves, it was determined that argon is superior to helium or air for use as the analysis chamber purge gas with an UV laser.

The vapour phase deposition of boron on titanium by the reaction between gaseous boron trichloride and titanium metal. Final report

International Nuclear Information System (INIS)

Cameron, D.J.; Shelton, R.A.J.

1965-03-01

The reaction, between boron trichloride vapour and titanium has been investigated in the temperature range 200 - 1350 deg. C. It has been found that an initial reaction leads to the formation of titanium tetrachloride and the deposition of boron on titanium, but that except for reactions between 900 and 1000 deg. C, the system is complicated by the formation of lower titanium chlorides due to secondary reactions between the titanium and titanium tetrachloride

Comparison of boron diffusion in silicon during shallow p{sup +}/n junction formation by non-melt excimer and green laser annealing

Energy Technology Data Exchange (ETDEWEB)

Aid, Siti Rahmah; Matsumoto, Satoru [Department of Electronics and Electrical Engineering, Keio University, 3-14-1 Hiyoshi, Kouhoku-ku, Yokohama, Kanagawa 223-8522 (Japan); Fuse, Genshu [SEN Corporation, SBS Tower 9F, 4-10-1 Yoga, Setagaya-ku, Tokyo 158-0097 (Japan); Sakuragi, Susumu [Sumitomo Heavy Industries Ltd., 19 Natsushima-cho, Yokosuka, Kanagawa 237-8555 (Japan)

2011-12-15

The combination of Ge pre-amorphization implantation, low-energy boron implantation, and non-melt laser annealing is a promising method for forming ultrashallow p{sup +}/n junctions in silicon. In this study, shallow p{sup +}/n junctions were formed by non-melt annealing implanted samples using a green laser (visible laser). The dopant diffusion, activation, and recrystallization of an amorphous silicon layer were compared with those obtained in our previous study in which non-melt annealing was performed using a KrF excimer laser (UV laser). The experimental results reveal that only slight diffusion of boron in the tail region occurred in green-laser-annealed samples. In contrast, remarkable boron diffusion occurred in KrF-laser-annealed samples for very short annealing times. Recrystallization of the amorphous silicon layer was slower in green-laser-annealed samples than in KrF-laser-annealed samples. We consider the penetration depth and the pulse duration are important factors that may affect boron diffusion. (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Bonding structure and mechanical properties of B-C-N thin films synthesized by pulsed laser deposition at different laser fluences

International Nuclear Information System (INIS)

Wang, C.B.; Xiao, J.L.; Shen, Q.; Zhang, L.M.

2016-01-01

Boron carbon nitride (B-C-N) thin films have been grown by pulsed laser deposition under different laser fluences changing from 1.0 to 3.0 J/cm"2. The influence of laser fluence on microstructure, bonding structure, and mechanical properties of the films was studied, so as to explore the possibility of improving their mechanical properties by controlling bonding structure. The bonding structure identified by FT-IR and XPS indicated the coexistence of B-N, B-C, N-C and N=C bonds in the films, suggesting the formation of a ternary B-C-N hybridization. There is a clear evolution of bonding structure in the B-C-N films with the increasing of laser fluence. The variation of the mechanical properties as a function of laser fluence was also in accordance with the evolution of B-C and sp"3 N-C bonds whereas contrary to that of sp"2 B-N and N=C bonds. The hardness and modulus reached the maximum value of 33.7 GPa and 256 GPa, respectively, at a laser fluence of 3.0 J/cm"2, where the B-C-N thin films synthesized by pulsed laser deposition possessed the highest intensity of B-C and N-C bonds and the lowest fraction of B-N and N=C bonds. - Highlights: • Improvement of mechanical property by controlling bonding structure is explored. • A clear evolution of bonding structure with the increasing of laser fluence • Variation of property is in accordance with the evolution of B−C and N−C bonds.

Laser deposition of HTSC films

International Nuclear Information System (INIS)

Sobol', Eh.N.; Bagratashvili, V.N.; Zherikhin, A.N.; Sviridov, A.P.

1990-01-01

Studies of the high-temperature superconducting (HTSC) films fabrication by the laser deposition are reviewed. Physical and chemical processes taking place during laser deposition are considered, such as the target evaporation, the material transport from the target to the substrate, the film growth on the substrate, thermochemical reactions and mass transfer within the HTSC films and their stability. The experimental results on the laser deposition of different HTSC ceramics and their properties investigations are given. The major technological issues are discussed including the deposition schemes, the oxygen supply, the target compositions and structure, the substrates and interface layers selection, the deposition regimes and their impact on the HTSC films properties. 169 refs.; 6 figs.; 2 tabs

Highly sensitive analysis of boron and lithium in aqueous solution using dual-pulse laser-induced breakdown spectroscopy.

Science.gov (United States)

Lee, Dong-Hyoung; Han, Sol-Chan; Kim, Tae-Hyeong; Yun, Jong-Il

2011-12-15

We have applied a dual-pulse laser-induced breakdown spectroscopy (DP-LIBS) to sensitively detect concentrations of boron and lithium in aqueous solution. Sequential laser pulses from two separate Q-switched Nd:YAG lasers at 532 nm wavelength have been employed to generate laser-induced plasma on a water jet. For achieving sensitive elemental detection, the optimal timing between two laser pulses was investigated. The optimum time delay between two laser pulses for the B atomic emission lines was found to be less than 3 μs and approximately 10 μs for the Li atomic emission line. Under these optimized conditions, the detection limit was attained in the range of 0.8 ppm for boron and 0.8 ppb for lithium. In particular, the sensitivity for detecting boron by excitation of laminar liquid jet was found to be excellent by nearly 2 orders of magnitude compared with 80 ppm reported in the literature. These sensitivities of laser-induced breakdown spectroscopy are very practical for the online elemental analysis of boric acid and lithium hydroxide serving as neutron absorber and pH controller in the primary coolant water of pressurized water reactors, respectively.

Thermodynamic approach to the conditions of chemical deposition of boron by contact with an inert substrate

International Nuclear Information System (INIS)

Thebault, J.; Naslain, R.; Hagenmuller, P.; Bernard, C.

1978-01-01

The optimum conditions for the synthesis of boron by chemical vapour deposition (CVD) from BCl 3 -H 2 or BBr 3 -H 2 mixtures onto an inert substrate (boron or boronized metals) have been studied by a thermodynamic approach. This approach, which postulates that states close to equilibrium are reached in the vicinity of the hot substrate, is based on the minimization of the total Gibbs free energy of the system. Between 1200 and 1900 K and under a total pressure of 1 atm, the hydrogen reduction of BCl 3 can lead to two types of by-products: BHCl 2 at all temperatures, and BCl 2 or BCl subhalides at high temperatures; BHCl 2 is the main product of the reduction at the lowest temperatures. The hydrogen reduction of BCl 3 is never complete for the conditions commonly used for the synthesis of boron. The amount of by-products and of BBr 3 which must be recycled can be minimized by utilizing BCl 3 -H 2 mixtures rich in hydrogen. The amount of boron deposited exhibits a maximum for a temperature close to 1700 K. Similar results have been obtained for BBr 3 . However, between 1000 and 1500 K and under a total pressure of 1 atm the amount of by-products (BHBr 2 and BBr 2 ) is smaller than in the case of BCl 3 . The boron yield from the reduction of BBr 3 is higher than that from BCl 3 and the percentage of boron halide which must be recycled is lower in the case of BBr 3 . Thus, BBr 3 appears to be a better source than BCl 3 for the CVD of boron. (Auth.)

Frequency mixing in boron carbide laser ablation plasmas

Science.gov (United States)

Oujja, M.; Benítez-Cañete, A.; Sanz, M.; Lopez-Quintas, I.; Martín, M.; de Nalda, R.; Castillejo, M.

2015-05-01

Nonlinear frequency mixing induced by a bichromatic field (1064 nm + 532 nm obtained from a Q-switched Nd:YAG laser) in a boron carbide (B4C) plasma generated through laser ablation under vacuum is explored. A UV beam at the frequency of the fourth harmonic of the fundamental frequency (266 nm) was generated. The dependence of the efficiency of the process as function of the intensities of the driving lasers differs from the expected behavior for four-wave mixing, and point toward a six-wave mixing process. The frequency mixing process was strongly favored for parallel polarizations of the two driving beams. Through spatiotemporal mapping, the conditions for maximum efficiency were found for a significant delay from the ablation event (200 ns), when the medium is expected to be a low-ionized plasma. No late components of the harmonic signal were detected, indicating a largely atomized medium.

2.4. The kinetics of hydrochloric-acid decomposition of calcined concentrate of boron raw material of Ak-Arkhar Deposit

International Nuclear Information System (INIS)

Mirsaidov, U.M.; Kurbonov, A.S.; Mamatov, E.D.

2015-01-01

Present article is devoted to kinetics of hydrochloric-acid decomposition of calcined concentrate of boron raw material of Ak-Arkhar Deposit. The experimental data of dependence of hydrochloric-acid decomposition of calcined boron raw material for boron oxide extraction on temperature (20-80 deg C) and process duration (15-60 min) were considered. It was defined that at temperature increasing the boron oxide extraction from borosilicate raw material increases from 24.1 till 86.8%. The constants of decomposition rate of boron raw material were calculated.

Separation of boron isotopes by infrared laser

International Nuclear Information System (INIS)

Suzuki, Kazuya

1995-01-01

Vibrationally excited chemical reaction of boron tribromide (BBr 3 ) with oxygen (O 2 ) is utilized to separate 10 B and 11 B. Infrared absorption of 10 BBr 3 is at 11.68μ and that of 11 BBr 3 is at 12.18μ. The wavelengths of ammonia laser made in the laboratory were mainly 11.71μ, 12.08μ and 12.26μ. Irradiation was done by focussing the laser with ZnSe lens on the sample gas (mixture of 1.5 torr of natural BBr 3 and 4.5 torr of O 2 ) in the reaction cell. Depletions of 10 BBr 3 and 11 BBr 3 due to chemical reaction of BBr 3 with O 2 was measured with infrared spectrometer. The maximum separation factor β( 10 B/ 11 B) obtained was about 4.5 (author)

Atomic layer deposition of boron-containing films using B{sub 2}F{sub 4}

Energy Technology Data Exchange (ETDEWEB)

Mane, Anil U., E-mail: amane@anl.gov; Elam, Jeffrey W. [Argonne National Laboratory, Argonne, Illinois 60126 (United States); Goldberg, Alexander; Halls, Mathew D. [Schrödinger, Inc., San Diego, California 92122 (United States); Seidel, Thomas E. [Seitek50, Palm Coast, Florida 32135 (United States); Current, Michael I. [Current Scientific, San Jose, California 95124 (United States); Despres, Joseph; Byl, Oleg; Tang, Ying; Sweeney, Joseph [Entegris, Danbury, Connecticut 06810 (United States)

2016-01-15

Ultrathin and conformal boron-containing atomic layer deposition (ALD) films could be used as a shallow dopant source for advanced transistor structures in microelectronics manufacturing. With this application in mind, diboron tetrafluoride (B{sub 2}F{sub 4}) was explored as an ALD precursor for the deposition of boron containing films. Density functional theory simulations for nucleation on silicon (100) surfaces indicated better reactivity of B{sub 2}F{sub 4} in comparison to BF{sub 3}. Quartz crystal microbalance experiments exhibited growth using either B{sub 2}F{sub 4}-H{sub 2}O for B{sub 2}O{sub 3} ALD, or B{sub 2}F{sub 4}-disilane (Si{sub 2}H{sub 6}) for B ALD, but in both cases, the initial growth per cycle was quite low (≤0.2 Å/cycle) and decreased to near zero growth after 8–30 ALD cycles. However, alternating between B{sub 2}F{sub 4}-H{sub 2}O and trimethyl aluminum (TMA)-H{sub 2}O ALD cycles resulted in sustained growth at ∼0.65 Å/cycle, suggesting that the dense –OH surface termination produced by the TMA-H{sub 2}O combination enhances the uptake of B{sub 2}F{sub 4} precursor. The resultant boron containing films were analyzed for composition by x-ray photoelectron spectroscopy, and capacitance measurements indicated an insulating characteristic. Finally, diffused boron profiles less than 100 Å were obtained after rapid thermal anneal of the boron containing ALD film.

Laser vapor phase deposition of semiconductors

Energy Technology Data Exchange (ETDEWEB)

Karlov, N.V.; Luk' ianchuk, B.S.; Sisakian, E.V.; Shafeev, G.A.

1987-06-01

The pyrolytic effect of IR laser radiation is investigated with reference to the initiation and control of the vapor phase deposition of semiconductor films. By selecting the gas mixture composition and laser emission parameters, it is possible to control the deposition and crystal formation processes on the surface of semiconductors, with the main control action achieved due to the nonadiabatic kinetics of reactions in the gas phase and high temperatures in the laser heating zone. This control mechanism is demonstrated experimentally during the laser vapor deposition of germanium and silicon films from tetrachlorides on single-crystal Si and Ge substrates. 5 references.

Surface Finish after Laser Metal Deposition

Science.gov (United States)

Rombouts, M.; Maes, G.; Hendrix, W.; Delarbre, E.; Motmans, F.

Laser metal deposition (LMD) is an additive manufacturing technology for the fabrication of metal parts through layerwise deposition and laser induced melting of metal powder. The poor surface finish presents a major limitation in LMD. This study focuses on the effects of surface inclination angle and strategies to improve the surface finish of LMD components. A substantial improvement in surface quality of both the side and top surfaces has been obtained by laser remelting after powder deposition.

Pulsed laser deposition in Twente: from research tool towards industrial deposition

NARCIS (Netherlands)

Blank, David H.A.; Dekkers, Jan M.; Rijnders, Augustinus J.H.M.

2014-01-01

After the discovery of the perovskite high Tc superconductors in 1986, a rare and almost unknown deposition technique attracted attention. Pulsed laser deposition (PLD), or laser ablation as it was called in the beginning, became popular because of the possibility to deposit complex materials, like

Laser-induced chemical vapor deposition reactions

International Nuclear Information System (INIS)

Teslenko, V.V.

1990-01-01

The results of investigation of chemical reactions of deposition of different substances from the gas phase when using the energy of pulse quasicontinuous and continuous radiation of lasers in the wave length interval from 0.193 to 10.6 μm are generalized. Main attetion is paid to deposition of inorganic substances including nonmetals (C, Si, Ge and others), metals (Cu, Au, Zn, Cd, Al, Cr, Mo, W, Ni) and some simple compounds. Experimental data on the effect of laser radiation parameters and reagent nature (hydrides, halogenides, carbonyls, alkyl organometallic compounds and others) on the deposition rate and deposit composition are described in detail. Specific features of laser-chemical reactions of deposition and prospects of their application are considered

Thermal conductivity of ultra-thin chemical vapor deposited hexagonal boron nitride films

International Nuclear Information System (INIS)

Alam, M. T.; Haque, M. A.; Bresnehan, M. S.; Robinson, J. A.

2014-01-01

Thermal conductivity of freestanding 10 nm and 20 nm thick chemical vapor deposited hexagonal boron nitride films was measured using both steady state and transient techniques. The measured value for both thicknesses, about 100 ± 10 W m −1 K −1 , is lower than the bulk basal plane value (390 W m −1 K −1 ) due to the imperfections in the specimen microstructure. Impressively, this value is still 100 times higher than conventional dielectrics. Considering scalability and ease of integration, hexagonal boron nitride grown over large area is an excellent candidate for thermal management in two dimensional materials-based nanoelectronics

Chemical vapor deposition of hexagonal boron nitride films in the reduced pressure

International Nuclear Information System (INIS)

Choi, B.J.

1999-01-01

Hexagonal boron nitride (h-BN) films were deposited onto a graphite substrate in reduced pressure by reacting ammonia and boron tribromide at 800--1,200 C. The growth rate of h-BN films was dependent on the substrate temperature and the total pressures. The growth rate increased with increasing the substrate temperature at the pressure of 2 kPa, while it showed a maximum value at the pressures of 4 and 8 kPa. The temperature at which the maximum growth rate occurs decreased with increasing total pressure. With increasing the substrate temperature and total pressure, the apparent grain size increased and the surface morphology showed a rough, cauliflower-like structure

Real-time boronization in PBX-M using erosion of solid boronized targets

International Nuclear Information System (INIS)

Kugel, H.W.; Timberlake, J.; Bell, R.; LeBlanc, B.; Okabayashi, M.; Paul, S.; Tighe, W.; Hirooka, Y.

1994-11-01

Thirty one real-time boronizations were applied to PBX-M using the plasma erosion of solid target probes. More than 17 g of boron were deposited in PBX-M using this technique. The probes were positioned at the edge plasma to optimize vaporization and minimize spallation. Auger depth profile analysis of poloidal and toroidal deposition sample coupon arrays indicate that boron was transported by the plasma around the torus and deep into the divertors. During discharges with continuous real-time boronization, low-Z and high-Z impurities decreased rapidly as plasma surfaces were covered during the first 20-30 discharges. After boronization, a short-term improvement in plasma conditions persisted prior to significant boron erosion from plasma surfaces, and a longer term, but less significant improvement persisted as boron farther from the edge continued gettering. Real-time solid target boronization has been found to be very effective for accelerating conditioning to new regimes and maintaining high performance plasma conditions

CO2 Laser Cutting of Hot Stamping Boron Steel Sheets

Directory of Open Access Journals (Sweden)

Pasquale Russo Spena

2017-10-01

Full Text Available This study investigates the quality of CO2 laser cutting of hot stamping boron steel sheets that are employed in the fabrication of automotive body-in-white. For this purpose, experimental laser cutting tests were conducted on 1.2 mm sheets at varying levels of laser power, cutting speed, and oxygen pressure. The resulting quality of cut edges was evaluated in terms of perpendicularity tolerance, surface irregularity, kerf width, heat affected zone, and dross extension. Experimental tests were based on a L9(34 orthogonal array design, with the effects of the process parameters on the quality responses being determined by means of a statistical analysis of variance (ANOVA. Quadratic mathematical models were developed to determine the relationships between the cutting parameters and the quality responses. Finally, a routine based on an optimization criterion was employed to predict the optimal setting of cutting factors and its effect on the quality responses. A confirmation experiment was conducted to verify the appropriateness of the optimization routine. The results show that all of the examined process parameters have a key role in determining the cut quality of hot stamping boron steel sheets, with cutting speed and their interactions having the most influencing effects. Particularly, interactions can have an opposite behavior for different levels of the process parameters.

Amorphous boron coatings produced with vacuum arc deposition technology

CERN Document Server

Klepper, C C; Yadlowsky, E J; Carlson, E P; Keitz, M D; Williams, J M; Zuhr, R A; Poker, D B

2002-01-01

In principle, boron (B) as a material has many excellent surface properties, including corrosion resistance, very high hardness, refractory properties, and a strong tendency to bond with most substrates. The potential technological benefits of the material have not been realized, because it is difficult to deposit it as coatings. B is difficult to evaporate, does not sputter well, and cannot be thermally sprayed. In this article, first successful deposition results from a robust system, based on the vacuum (cathodic) arc technology, are reported. Adherent coatings have been produced on 1100 Al, CP-Ti, Ti-6Al-4V, 316 SS, hard chrome plate, and 52 100 steel. Composition and thickness analyses have been performed by Rutherford backscattering spectroscopy. Hardness (H) and modules (E) have been evaluated by nanoindentation. The coatings are very pure and have properties characteristic of B suboxides. A microhardness of up to 27 GPa has been measured on a 400-nm-thick film deposited on 52 100 steel, with a corresp...

Modelling of capillary Z-pinch recombination pumping of boron extreme ultraviolet laser

Czech Academy of Sciences Publication Activity Database

Vrba, Pavel; Bobrova, N. A.; Sasorov, P. V.; Vrbová, M.; Hübner, Jakub

2009-01-01

Roč. 16, č. 7 (2009), 073105 1-073105 11 ISSN 1070-664X R&D Projects: GA ČR GA102/07/0275 Institutional research plan: CEZ:AV0Z20430508 Keywords : Boron * capillary * discharges (electric * laser ablation * optical pumping * plasma heating by laser * plasma kinetic theory * plasma magnetohydrodynamics * Z pinch Subject RIV: BL - Plasma and Gas Discharge Physics Impact factor: 2.475, year: 2009 http://link.aip.org/link/? PHP /16/073105

Evaluation of plasma disruption simulating short pulse laser irradiation experiments on boronated graphites and CFCs [carbon fibre composites

International Nuclear Information System (INIS)

Stad, R.C.L. van der; Klippel, H.T.; Kraaij, G.J.

1992-12-01

New experimental and numerical results from disruption heat flux simulations in the millisecond range with laser beams are discussed. For a number of graphites, boronated graphites and carbon fibre composites, the effective enthalpy of ablation is determined as 30 ± 3 MJ/kg, using laser pulses of about -.3 ms. The numerical results predict the experimental results rather well. No effect of boron doping on the ablation enthalpy is found. (author). 9 refs., 4 figs., 1 tab

Boron-Proton Nuclear-Fusion Enhancement Induced in Boron-Doped Silicon Targets by Low-Contrast Pulsed Laser

Directory of Open Access Journals (Sweden)

A. Picciotto

2014-08-01

Full Text Available We show that a spatially well-defined layer of boron dopants in a hydrogen-enriched silicon target allows the production of a high yield of alpha particles of around 10^{9} per steradian using a nanosecond, low-contrast laser pulse with a nominal intensity of approximately 3×10^{16}  W cm^{−2}. This result can be ascribed to the nature of the long laser-pulse interaction with the target and with the expanding plasma, as well as to the optimal target geometry and composition. The possibility of an impact on future applications such as nuclear fusion without production of neutron-induced radioactivity and compact ion accelerators is anticipated.

Spectroscopic and imaging diagnostics of pulsed laser deposition laser plasmas

International Nuclear Information System (INIS)

Thareja, Raj K.

2002-01-01

An overview of laser spectroscopic techniques used in the diagnostics of laser ablated plumes used for thin film deposition is given. An emerging laser spectroscopic imaging technique for the laser ablation material processing is discussed. (author)

Boron erosion and carbon deposition due to simultaneous bombardment with deuterium and carbon ions in plasmas

International Nuclear Information System (INIS)

Ohya, K.; Kawata, J.; Wienhold, P.; Karduck, P.; Rubel, M.; Seggern, J. von

1999-01-01

Erosion of boron out of a thin film exposed to deuterium edge plasmas and the simultaneous carbon deposition have been investigated in the tokamak TEXTOR-94 and simulated by means of a dynamic Monte Carlo code. The calculated results are compared with some observations (colorimetry, spectroscopy and AES) during and after the exposures. The implantation of carbon impurities strongly changes the effective boron sputtering yield of the film, which results into a lowering of the film erosion and a formation of thick carbon deposits. A strong decrease in the observed BII line emission around a surface location far from the plasma edge can be explained by a carbon deposition on the film. The calculated carbon depth profiles in the film, depending on the distance of the exposed surface from the plasma edge, are in reasonable agreement with measurements by AES after the exposures. Although simultaneous surface erosion and carbon deposition can be simulated, the calculated erosion rate is larger, by a factor of 2, than the observations by colorimetry at the early stage of the exposure

Study on the Microstructure and Electrical Properties of Boron and Sulfur Codoped Diamond Films Deposited Using Chemical Vapor Deposition

Directory of Open Access Journals (Sweden)

Zhang Jing

2014-01-01

Full Text Available The atomic-scale microstructure and electron emission properties of boron and sulfur (denoted as B-S codoped diamond films grown on high-temperature and high-pressure (HTHP diamond and Si substrates were investigated using atom force microscopy (AFM, scanning tunneling microscopy (STM, secondary ion mass spectroscopy (SIMS, and current imaging tunneling spectroscopy (CITS measurement techniques. The films grown on Si consisted of large grains with secondary nucleation, whereas those on HTHP diamond are composed of well-developed polycrystalline facets with an average size of 10–50 nm. SIMS analyses confirmed that sulfur was successfully introduced into diamond films, and a small amount of boron facilitated sulfur incorporation into diamond. Large tunneling currents were observed at some grain boundaries, and the emission character was better at the grain boundaries than that at the center of the crystal. The films grown on HTHP diamond substrates were much more perfect with higher quality than the films deposited on Si substrates. The local I-V characteristics for films deposited on Si or HTHP diamond substrates indicate n-type conduction.

Fabrication and characterization of boron-doped nanocrystalline diamond-coated MEMS probes

Science.gov (United States)

Bogdanowicz, Robert; Sobaszek, Michał; Ficek, Mateusz; Kopiec, Daniel; Moczała, Magdalena; Orłowska, Karolina; Sawczak, Mirosław; Gotszalk, Teodor

2016-04-01

Fabrication processes of thin boron-doped nanocrystalline diamond (B-NCD) films on silicon-based micro- and nano-electromechanical structures have been investigated. B-NCD films were deposited using microwave plasma assisted chemical vapour deposition method. The variation in B-NCD morphology, structure and optical parameters was particularly investigated. The use of truncated cone-shaped substrate holder enabled to grow thin fully encapsulated nanocrystalline diamond film with a thickness of approx. 60 nm and RMS roughness of 17 nm. Raman spectra present the typical boron-doped nanocrystalline diamond line recorded at 1148 cm-1. Moreover, the change in mechanical parameters of silicon cantilevers over-coated with boron-doped diamond films was investigated with laser vibrometer. The increase of resonance to frequency of over-coated cantilever is attributed to the change in spring constant caused by B-NCD coating. Topography and electrical parameters of boron-doped diamond films were investigated by tapping mode AFM and electrical mode of AFM-Kelvin probe force microscopy (KPFM). The crystallite-grain size was recorded at 153 and 238 nm for boron-doped film and undoped, respectively. Based on the contact potential difference data from the KPFM measurements, the work function of diamond layers was estimated. For the undoped diamond films, average CPD of 650 mV and for boron-doped layer 155 mV were achieved. Based on CPD values, the values of work functions were calculated as 4.65 and 5.15 eV for doped and undoped diamond film, respectively. Boron doping increases the carrier density and the conductivity of the material and, consequently, the Fermi level.

Laser cleaning of pulsed laser deposited rhodium films for fusion diagnostic mirrors

International Nuclear Information System (INIS)

Uccello, A.; Maffini, A.; Dellasega, D.; Passoni, M.

2013-01-01

Highlights: ► Pulsed laser deposition is exploited to produce Rh films for first mirrors. ► Pulsed laser deposition is exploited to produce tokamak-like C contaminants. ► Rh laser damage threshold has been evaluated for infrared pulses. ► Laser cleaning of C contaminated Rh films gives promising results. -- Abstract: In this paper an experimental investigation on the laser cleaning process of rhodium films, potentially candidates to be used as tokamak first mirrors (FMs), from redeposited carbon contaminants is presented. A relevant issue that lowers mirror's performance during tokamak operations is the redeposition of sputtered material from the first wall on their surface. Among all the possible techniques, laser cleaning, in which a train of laser pulses is launched to the surface that has to be treated, is a method to potentially mitigate this problem. The same laser system (Q-switched Nd:YAG laser with a fundamental wavelength of 1064-nm and 7-ns pulses) has been employed with three aims: (i) production by pulsed laser deposition (PLD) of Rh film mirrors, (ii) production by PLD of C deposits with controlled morphology, and (iii) investigation of the laser cleaning method onto C contaminated Rh samples. The evaluation of Rh films laser damage threshold, as a function of fluence and number of pulses, is discussed. Then, the C/Rh films have been cleaned by the laser beam. The exposed zones have been characterized by visual inspection and scanning electron microscopy (SEM), showing promising results

Electrophoretic deposits of boron on duralumin plates used for measuring neutron flux; Depots electrophoretiques de bore sur plaques de duralumin destines a des mesures de flux de neutrons

Energy Technology Data Exchange (ETDEWEB)

Lang, F M; Magnier, P; Finck, C [Commissariat a l' Energie Atomique, Saclay (France). Centre d' Etudes Nucleaires

1956-07-01

Preparation of boron thin film deposits of around 1 mg per cm{sup 2} on duralumin plates with a diameter of 8 cm. The boron coated plates for ionization chambers were originally prepared at the CEA by pulverization of boron carbides on sodium silicates. This method is not controlling precisely enough the quantity of boron deposit. Thus, an electrophoretic method is considered for a better control of the quantity of boron deposit in the scope of using in the future boron 10 which is costly and rare. The method described by O. Flint is not satisfying enough and a similar electrophoretic process has been developed. Full description of the method is given as well as explanation of the use of dried methanol as solvent, tannin as electrolyte and magnesium chloride to avoid alumina formation. (M.P.)

Stabilizing laser energy density on a target during pulsed laser deposition of thin films

Science.gov (United States)

Dowden, Paul C.; Jia, Quanxi

2016-05-31

A process for stabilizing laser energy density on a target surface during pulsed laser deposition of thin films controls the focused laser spot on the target. The process involves imaging an image-aperture positioned in the beamline. This eliminates changes in the beam dimensions of the laser. A continuously variable attenuator located in between the output of the laser and the imaged image-aperture adjusts the energy to a desired level by running the laser in a "constant voltage" mode. The process provides reproducibility and controllability for deposition of electronic thin films by pulsed laser deposition.

Plasma deposition of cubic boron nitride films from non-toxic material at low temperatures

International Nuclear Information System (INIS)

Karim, M.Z.; Cameron, D.C.; Murphy, M.J.; Hashmi, M.S.J.

1991-01-01

Boron nitride has become the focus of a considerable amount of interest because of its properties which relate closely to those of carbon. In particular, the cubic nitride phase has extreme hardness and very high thermal conductivity similar to the properties of diamond. The conventional methods of synthesis use the highly toxic and inflammable gas diborane (B 2 H 6 ) as the reactant material. A study has been made of the deposition of thin films of boron nitride (BN) using non-toxic material by the plasma-assisted chemical vapour deposition technique. The source material was borane-ammonia (BH 3 -NH 3 ) which is a crystalline solid at room temperature with a high vapour pressure. The BH 3 -NH 3 vapour was decomposed in a 13.56 MHz nitrogen plasma coupled either inductively or capacitively with the system. The composition of the films was assessed by measuring their IR absorption when deposited on silicon and KBr substrates. The hexagonal (graphitic) and cubic (diamond-like) allotropes can be distinguished by their characteristic absorption bands which occur at 1365 and 780 cm -1 (hexagonal) and 1070 cm -1 (cubic). We have deposited BN films consisting of a mixture of hexagonal and cubic phases; the relative content of the cubic phase was found to be directly dependent on r.f. power and substrate bias. (orig.)

FTIR and electrical characterization of a-Si:H layers deposited by PECVD at different boron ratios

Energy Technology Data Exchange (ETDEWEB)

Orduna-Diaz, A., E-mail: abdu@susu.inaoep.mx [Instituto Nacional de Astrofisica, Optica y Electronica, Luis Enrique Erro No. 1, Tonantzintla, Puebla 72840 (Mexico); Trevino-Palacios, C.G. [Instituto Nacional de Astrofisica, Optica y Electronica, Luis Enrique Erro No. 1, Tonantzintla, Puebla 72840 (Mexico); Rojas-Lopez, M.; Delgado-Macuil, R.; Gayou, V.L. [Centro de Investigacion en Biotecnologia Aplicada (CIBA), IPN, Tlaxcala, Tlax. 72197 (Mexico); Torres-Jacome, A. [Instituto Nacional de Astrofisica, Optica y Electronica, Luis Enrique Erro No. 1, Tonantzintla, Puebla 72840 (Mexico)

2010-10-25

Hydrogenated amorphous silicon (a-Si:H) has found applications in flat panel displays, photovoltaic solar cell and recently has been employed in boron doped microbolometer array. We have performed electrical and structural characterizations of a-Si:H layers prepared by plasma enhanced chemical vapor deposition (PECVD) method at 540 K on glass substrates at different diborane (B{sub 2}H{sub 6}) flow ratios (500, 250, 150 and 50 sccm). Fourier transform infrared spectroscopy (FTIR) measurements obtained by specular reflectance sampling mode, show Si-Si, B-O, Si-H, and Si-O vibrational modes (611, 1300, 2100 and 1100 cm{sup -1} respectively) with different strengths which are associated to hydrogen and boron content. The current-voltage curves show that at 250 sccm flow of boron the material shows the lowest resistivity, but for the 150 sccm boron flow it is obtained the highest temperature coefficient of resistance (TCR).

A system to deposit boron films (boronization) in the DIII-D tokamak

International Nuclear Information System (INIS)

Hodapp, T.R.; Jackson, G.L.; Phillips, J.; Holtrop, K.L.; Peterson, P.L.; Winters, J.

1992-01-01

A system has been added to the DIII-D tokamak to coat its plasma facing surfaces with a film of boron using diborane gas. The system includes special health and safety equipment for handling the diborane gas which is toxic and inflammable. The purpose f the boron film is to reduce the levels of impurity atoms in the DIII-D plasmas. Experiments following the application of the boron film in DIII-D have led to significant reductions in plasma impurity levels and the observation of a new, very high confinement regime

CTS and CZTS for solar cells made by pulsed laser deposition and pulsed electron deposition

DEFF Research Database (Denmark)

Ettlinger, Rebecca Bolt

This thesis concerns the deposition of thin films for solar cells using pulsed laser deposition (PLD) and pulsed electron deposition (PED). The aim was to deposit copper tin sulfide (CTS) and zinc sulfide (ZnS) by pulsed laser deposition to learn about these materials in relation to copper zinc tin...... time. We compared the results of CZTS deposition by PLD at DTU in Denmark to CZTS made by PED at IMEM-CNR, where CIGS solar cells have successfully been fabricated at very low processing temperatures. The main results of this work were as follows: Monoclinic-phase CTS films were made by pulsed laser...... deposition followed by high temperature annealing. The films were used to understand the double band gap that we and other groups observed in the material. The Cu-content of the CTS films varied depending on the laser fluence (the laser energy per pulse and per area). The material transfer from...

Boron isotope evidence for the involvement of non-marine evaporites in the origin of the Broken Hill ore deposits

Science.gov (United States)

Slack, J.F.; Palmer, M.R.; Stevens, B.P.J.

1989-01-01

IDENTIFYING the palaeogeographic setting and mode of origin of stratabound ore deposits can be difficult in high-grade metamorphic terranes, where the effects of metamorphism may obscure the nature of the protoliths. Here we report boron isotope data for tourmalines from the early Proterozoic Broken Hill block, in Australia, which hosts giant lead-zinc-silver sulphide deposits. With one exception the 11B/10B ratios are lower than those for all other tourmalines from massive sulphide deposits and tour-malinites elsewhere in the world. We propose that these low ratios reflect leaching of boron from non-marine evaporitic borates by convecting hydrothermal fluids associated with early Proterozoic continental rifting. A possible modern analogue is the Salton Sea geothermal field in California. ?? 1989 Nature Publishing Group.

Fusion energy using avalanche increased boron reactions for block-ignition by ultrahigh power picosecond laser pulses

Czech Academy of Sciences Publication Activity Database

Hora, H.; Korn, Georg; Giuffrida, Lorenzo; Margarone, Daniele; Picciotto, A.; Krása, Josef; Jungwirth, Karel; Ullschmied, Jiří; Lalousis, P.; Eliezer, S.; Miley, G. H.; Moustaizis, S.; Mourou, G.

2015-01-01

Roč. 33, č. 4 (2015), s. 607-619 ISSN 0263-0346 Institutional support: RVO:68378271 ; RVO:61389021 Keywords : fusion energy without radiation problem * boron fusion by lasers * non-linear force-driven block ignition Subject RIV: BL - Plasma and Gas Discharge Physics; BH - Optics, Masers, Lasers (UFP-V) Impact factor: 1.649, year: 2015

A system to deposit boron films (boronization) in the DIII-D tokamak

International Nuclear Information System (INIS)

Hodapp, T.R.; Jackson, G.L.; Phillips, J.; Holtrop, K.L.; Petersen, P.I.; Winter, J.

1991-09-01

A system has been added to the D3-D tokamak to coat its plasma facing surfaces with a film of boron using diborane gas. The system includes special health and safety equipment for handling the diborane gas which is toxic and inflammable. The purpose of the boron film is to reduce the levels of impurity atoms in the D3-D plasmas. Experiments following the application of the boron film in D3-D have led to significant reductions in plasma impurity levels and the observation of a new, very high confinement regime. 9 refs., 1 fig

Boron isotopic composition of tertiary borate deposits in the Puna Plateau of the Central Andes, NW Argentina

International Nuclear Information System (INIS)

Kasemann, Simone; Franz, Gerhard; Viramonte, Jose G.; Alonso, Ricardo N.

1998-01-01

Full text: The most important borate deposits in South America are concentrated in the Central Andes. The Neogene deposits are located in the Puna Plateau of N W Argentina. These continental deposits are stratiform in the tectonically deformed Tertiary rocks. The largest borate accumulations Tincalayu, Sijes and Loma Blanca are part of the Late Miocene Sijes Formation, composed by different evaporitic and clastic units. In the main borate units of each location different phases of borates dominate. In Tincalayu the mayor mineral is borax with minor amounts of kernite and other rare borate minerals (ameginite, rivadavite, etc.). The principal minerals in Loma Blanca are borax with minor ulexite and inyoite. In the two main units of Sijes hydroboracite and colemanite are the major minerals; inyoite and ulexite appear subordinately. The deposition of the borates is due to a strong evaporation in playa lakes, which were fed by boron bearing thermal fluids (Alonso and Viramonte 1990). From Loma Blanca we determined δ 11 B values of ulexite (- 6.3 %0), inyoite (-12.7 %0) and terrugite (-16.2 %0); and from Tincalayu the δ 11 B values of borax (-10.5 %0), tincal (-12.2 %0) kernite (-11.7 %0) and inderite (-15.4 %0). The borates of Sijes are hydroboracite (-16.8 %0 to -17.2 %0), ulexite (-22.4 %0) and inyoite (-28.5 %0 to -29.6 %0). In order to get information about the δ 11 B values and pH of a boron solution we analysed the thermal spring of Antuco. It has a δ 11 B of -12.5%0 at a pH of 7.9. The presently forming ulexite deposit has a δ 11 B of -22.4%0. Borates within one depositional unit show a decreasing δ 11 B value sequence from the Na-Borates to the Ca-Borates related to the boron coordination of the minerals (Oi et al. 1989). The difference in the δ 11 B values excludes the precipitation in equilibrium from solutions with constant pH. According to results from previous work on Neogene borates (Turkey, USA) we interpret the borate succession due to

Determination and optimization of the ζ potential in boron electrophoretic deposition on aluminium substrates

International Nuclear Information System (INIS)

Oliveira Sampa, M.H. de; Vinhas, L.A.; Pino, E.S.

1991-05-01

In this work we present an introduction of the electrophoretic process followed by a detailed experimental treatment of the technique used in the determination and optimization of the ζ-potential, mainly as a function of the electrolyte concentration, in a high purity boron electrophoretics deposition on aluminium substrates used as electrodes in neutron detectors. (author)

Amorphous silicon passivation for 23.3% laser processed back contact solar cells

Science.gov (United States)

Carstens, Kai; Dahlinger, Morris; Hoffmann, Erik; Zapf-Gottwick, Renate; Werner, Jürgen H.

2017-08-01

This paper presents amorphous silicon deposited at temperatures below 200 °C, leading to an excellent passivation layer for boron doped emitter and phosphorus doped back surface field areas in interdigitated back contact solar cells. A higher deposition temperature degrades the passivation of the boron emitter by an increased hydrogen effusion due to lower silicon hydrogen bond energy, proved by hydrogen effusion measurements. The high boron surface doping in crystalline silicon causes a band bending in the amorphous silicon. Under these conditions, at the interface, the intentionally undoped amorphous silicon becomes p-type conducting, with the consequence of an increased dangling bond defect density. For bulk amorphous silicon this effect is described by the defect pool model. We demonstrate, that the defect pool model is also applicable to the interface between amorphous and crystalline silicon. Our simulation shows the shift of the Fermi energy towards the valence band edge to be more pronounced for high temperature deposited amorphous silicon having a small bandgap. Application of optimized amorphous silicon as passivation layer for the boron doped emitter and phosphorus doped back surface field on the rear side of laser processed back contact solar cells, fabricated using four laser processing steps, yields an efficiency of 23.3%.

The effect of excimer laser pretreatment on diffusion and activation of boron implanted in silicon

International Nuclear Information System (INIS)

Monakhov, E.V.; Svensson, B.G.; Linnarsson, M.K.; La Magna, A.; Italia, M.; Privitera, V.; Fortunato, G.; Cuscuna, M.; Mariucci, L.

2005-01-01

We have investigated the effect of excimer laser annealing (ELA) on transient enhanced diffusion (TED) and activation of boron implanted in Si during subsequent rapid thermal annealing (RTA). It is observed that ELA with partial melting of the implanted region causes reduction of TED in the region that remains solid during ELA, where the diffusion length of boron is reduced by a factor of ∼4 as compared to the as-implanted sample. This is attributed to several mechanisms such as liquid-state annealing of a fraction of the implantation induced defects, introduction of excess vacancies during ELA, and solid-state annealing of the defects beyond the maximum melting depth by the heat wave propagating into the Si wafer. The ELA pretreatment provides a substantially improved electrical activation of boron during subsequent RTA

Use of B{sub 2}O{sub 3} films grown by plasma-assisted atomic layer deposition for shallow boron doping in silicon

Energy Technology Data Exchange (ETDEWEB)

Kalkofen, Bodo, E-mail: bodo.kalkofen@ovgu.de; Amusan, Akinwumi A.; Bukhari, Muhammad S. K.; Burte, Edmund P. [Institute of Micro and Sensor Systems, Otto-von-Guericke University, Universitätsplatz 2, 39106 Magdeburg (Germany); Garke, Bernd [Institute for Experimental Physics, Otto-von-Guericke University, Universitätsplatz 2, 39106 Magdeburg (Germany); Lisker, Marco [IHP, Im Technologiepark 25, 15236 Frankfurt (Oder) (Germany); Gargouri, Hassan [SENTECH Instruments GmbH, Schwarzschildstraße 2, 12489 Berlin (Germany)

2015-05-15

Plasma-assisted atomic layer deposition (PALD) was carried for growing thin boron oxide films onto silicon aiming at the formation of dopant sources for shallow boron doping of silicon by rapid thermal annealing (RTA). A remote capacitively coupled plasma source powered by GaN microwave oscillators was used for generating oxygen plasma in the PALD process with tris(dimethylamido)borane as boron containing precursor. ALD type growth was obtained; growth per cycle was highest with 0.13 nm at room temperature and decreased with higher temperature. The as-deposited films were highly unstable in ambient air and could be protected by capping with in-situ PALD grown antimony oxide films. After 16 weeks of storage in air, degradation of the film stack was observed in an electron microscope. The instability of the boron oxide, caused by moisture uptake, suggests the application of this film for testing moisture barrier properties of capping materials particularly for those grown by ALD. Boron doping of silicon was demonstrated using the uncapped PALD B{sub 2}O{sub 3} films for RTA processes without exposing them to air. The boron concentration in the silicon could be varied depending on the source layer thickness for very thin films, which favors the application of ALD for semiconductor doping processes.

Ultrashort pulse laser deposition of thin films

Science.gov (United States)

Perry, Michael D.; Banks, Paul S.; Stuart, Brent C.

2002-01-01

Short pulse PLD is a viable technique of producing high quality films with properties very close to that of crystalline diamond. The plasma generated using femtosecond lasers is composed of single atom ions with no clusters producing films with high Sp.sup.3 /Sp.sup.2 ratios. Using a high average power femtosecond laser system, the present invention dramatically increases deposition rates to up to 25 .mu.m/hr (which exceeds many CVD processes) while growing particulate-free films. In the present invention, deposition rates is a function of laser wavelength, laser fluence, laser spot size, and target/substrate separation. The relevant laser parameters are shown to ensure particulate-free growth, and characterizations of the films grown are made using several diagnostic techniques including electron energy loss spectroscopy (EELS) and Raman spectroscopy.

The thermodynamic approach to boron chemical vapour deposition based on a computer minimization of the total Gibbs free energy

International Nuclear Information System (INIS)

Naslain, R.; Thebault, J.; Hagenmuller, P.; Bernard, C.

1979-01-01

A thermodynamic approach based on the minimization of the total Gibbs free energy of the system is used to study the chemical vapour deposition (CVD) of boron from BCl 3 -H 2 or BBr 3 -H 2 mixtures on various types of substrates (at 1000 < T< 1900 K and 1 atm). In this approach it is assumed that states close to equilibrium are reached in the boron CVD apparatus. (Auth.)

Laser-excited photoemission spectroscopy study of superconducting boron-doped diamond

Directory of Open Access Journals (Sweden)

K. Ishizaka, R. Eguchi, S. Tsuda, T. Kiss, T. Shimojima, T. Yokoya, S. Shin, T. Togashi, S. Watanabe, C.-T. Chen, C.Q. Zhang, Y. Takano, M. Nagao, I. Sakaguchi, T. Takenouchi and H. Kawarada

2006-01-01

Full Text Available We have investigated the low-energy electronic state of boron-doped diamond thin film by the laser-excited photoemission spectroscopy. A clear Fermi-edge is observed for samples doped above the semiconductor–metal boundary, together with the characteristic structures at 150×n meV possibly due to the strong electron–lattice coupling effect. In addition, for the superconducting sample, we observed a shift of the leading edge below Tc indicative of a superconducting gap opening. We discuss the electron–lattice coupling and the superconductivity in doped diamond.

Effects of laser fluence on the structural properties of pulsed laser deposited ruthenium thin films

Energy Technology Data Exchange (ETDEWEB)

Lee, Wai-Keat; Wong, Hin-Yong; Chan, Kah-Yoong; Tou, Teck-Yong [Multimedia University, Centre for Advanced Devices and Systems (CADS), Faculty of Engineering, Cyberjaya, Selangor (Malaysia); Yong, Thian-Khok [Universiti Tunku Abdul Rahman, Faculty of Engineering and Science, Setapak, Kuala Lumpur (Malaysia); Yap, Seong-Shan [Norwegian University of Science and Technology, Institute of Physics, Trondheim (Norway)

2010-08-15

Ruthenium (Ru) has received great interest in recent years for applications in microelectronics. Pulsed laser deposition (PLD) enables the growth of Ru thin films at low temperatures. In this paper, we report for the first time the characterization of pulsed laser deposited Ru thin films. The deposition processes were carried out at room temperature in vacuum environment for different durations with a pulsed Nd:YAG laser of 355-nm laser wavelength, employing various laser fluences ranging from 2 J/cm{sup 2} to 8 J/cm{sup 2}. The effect of the laser fluence on the structural properties of the deposited Ru films was investigated using surface profilometry, scanning electron microscopy (SEM), and X-ray diffraction (XRD). Ru droplets, some spherical in shape and some flattened into round discs were found on the deposited Ru. The droplets were correlated to ripple formations on the target during the laser-induced ejection from the target. In addition, crystalline Ru with orientations of (100), (101), and (002) was observed in the XRD spectra and their intensities were found to increase with increasing laser fluence and film thickness. Grain sizes ranging from 20 nm to 35 nm were deduced using the Scherrer formula. Optical emission spectroscopy (OES) and energy-dispersive X-ray spectroscopy (EDS) show that the composition of the plume and the deposited Ru film was of high purity. (orig.)

Effects of laser fluence on the structural properties of pulsed laser deposited ruthenium thin films

International Nuclear Information System (INIS)

Lee, Wai-Keat; Wong, Hin-Yong; Chan, Kah-Yoong; Tou, Teck-Yong; Yong, Thian-Khok; Yap, Seong-Shan

2010-01-01

Ruthenium (Ru) has received great interest in recent years for applications in microelectronics. Pulsed laser deposition (PLD) enables the growth of Ru thin films at low temperatures. In this paper, we report for the first time the characterization of pulsed laser deposited Ru thin films. The deposition processes were carried out at room temperature in vacuum environment for different durations with a pulsed Nd:YAG laser of 355-nm laser wavelength, employing various laser fluences ranging from 2 J/cm 2 to 8 J/cm 2 . The effect of the laser fluence on the structural properties of the deposited Ru films was investigated using surface profilometry, scanning electron microscopy (SEM), and X-ray diffraction (XRD). Ru droplets, some spherical in shape and some flattened into round discs were found on the deposited Ru. The droplets were correlated to ripple formations on the target during the laser-induced ejection from the target. In addition, crystalline Ru with orientations of (100), (101), and (002) was observed in the XRD spectra and their intensities were found to increase with increasing laser fluence and film thickness. Grain sizes ranging from 20 nm to 35 nm were deduced using the Scherrer formula. Optical emission spectroscopy (OES) and energy-dispersive X-ray spectroscopy (EDS) show that the composition of the plume and the deposited Ru film was of high purity. (orig.)

Thermal expansion measurements on boron carbide and europium sesquioxide by laser interferometry

International Nuclear Information System (INIS)

Preston, S.D.

1980-01-01

A laser interferometer technique for measuring the absolute linear thermal expansion of small annular specimens is described. Results are presented for unirradiated boron carbide (B 4 C) and europia (Eu 2 O 3 ) up to 1000 0 C. Both compounds are neutron-absorbing materials of potential use in fast-reactor control rods and data on their thermophysical properties, in particular linear thermal expansion, are essential to the control rod designers. (author)

Chromium carbide thin films deposited by ultra-short pulse laser deposition

International Nuclear Information System (INIS)

Teghil, R.; Santagata, A.; De Bonis, A.; Galasso, A.; Villani, P.

2009-01-01

Pulsed laser deposition performed by a laser with a pulse duration of 250 fs has been used to deposit films from a Cr 3 C 2 target. Due to the different processes involved in the laser ablation when it is performed by an ultra-short pulse source instead of a conventional short pulse one, it has been possible to obtain in vacuum films containing only one type of carbide, Cr 3 C 2 , as shown by X-ray photoelectron spectroscopy. On the other hand, Cr 3 C 2 is not the only component of the films, since a large amount of amorphous carbon is also present. The films, deposited at room temperature, are amorphous and seem to be formed by the coalescence of a large number of particles with nanometric size. The film composition can be explained in terms of thermal evaporation from particles ejected from the target.

Influence of laser power on microstructure of laser metal deposited 17-4 ph stainless steel

CSIR Research Space (South Africa)

Adeyemi, AA

2017-09-01

Full Text Available The influence of laser power on the microstructure of 17-4 PH stainless steel produced by laser metal deposition was investigated. Multiple-trackof 17-4 stainless steel powder was deposited on 316 stainless steel substrate using laser metal...

Evaluation of freestanding boron-doped diamond grown by chemical vapour deposition as substrates for vertical power electronic devices

Energy Technology Data Exchange (ETDEWEB)

Issaoui, R.; Achard, J.; Tallaire, A.; Silva, F.; Gicquel, A. [LSPM-CNRS (formerly LIMHP), Universite Paris 13, 99, Avenue Jean-Baptiste Clement, 93430 Villetaneuse (France); Bisaro, R.; Servet, B.; Garry, G. [Thales Research and Technology France, Campus de Polytechnique, 1 Avenue Augustin Fresnel, F-91767 Palaiseau Cedex (France); Barjon, J. [GEMaC-CNRS, Universite de Versailles Saint Quentin Batiment Fermat, 45 Avenue des Etats-Unis, 78035 Versailles Cedex (France)

2012-03-19

In this study, 4 x 4 mm{sup 2} freestanding boron-doped diamond single crystals with thickness up to 260 {mu}m have been fabricated by plasma assisted chemical vapour deposition. The boron concentrations measured by secondary ion mass spectroscopy were 10{sup 18} to 10{sup 20} cm{sup -3} which is in a good agreement with the values calculated from Fourier transform infrared spectroscopy analysis, thus indicating that almost all incorporated boron is electrically active. The dependence of lattice parameters and crystal mosaicity on boron concentrations have also been extracted from high resolution x-ray diffraction experiments on (004) planes. The widths of x-ray rocking curves have globally shown the high quality of the material despite a substantial broadening of the peak, indicating a decrease of structural quality with increasing boron doping levels. Finally, the suitability of these crystals for the development of vertical power electronic devices has been confirmed by four-point probe measurements from which electrical resistivities as low as 0.26 {Omega} cm have been obtained.

Internal stress control of boron thin film

Energy Technology Data Exchange (ETDEWEB)

Satomi, N.; Kitamura, M.; Sasaki, T.; Nishikawa, M. [Osaka Univ., Suita (Japan). Graduate Sch. of Eng.

1998-09-01

The occurrence of stress in thin films has led to serious stability problems in practical use. We have investigated the stress in the boron films to find the deposition condition of the boron films with less stress. It was found that the stress in the boron film varies sufficiently from compressive to tensile stress, that is from -1.0 to 1.4 GPa, depending on the evaporation conditions, such as deposition rate and the substrate temperature. Hydrogen ion bombardment resulted in the enhancement of the compressive stress, possibly due to ion peening effect, while under helium ion bombardment, stress relief was observed. The boron film with nearly zero stress was obtained by the evaporation at a deposition rate of 0.5 nm s{sup -1} and substrate temperature of 300 C. (orig.) 12 refs.

Internal stress control of boron thin film

International Nuclear Information System (INIS)

Satomi, N.; Kitamura, M.; Sasaki, T.; Nishikawa, M.

1998-01-01

The occurrence of stress in thin films has led to serious stability problems in practical use. We have investigated the stress in the boron films to find the deposition condition of the boron films with less stress. It was found that the stress in the boron film varies sufficiently from compressive to tensile stress, that is from -1.0 to 1.4 GPa, depending on the evaporation conditions, such as deposition rate and the substrate temperature. Hydrogen ion bombardment resulted in the enhancement of the compressive stress, possibly due to ion peening effect, while under helium ion bombardment, stress relief was observed. The boron film with nearly zero stress was obtained by the evaporation at a deposition rate of 0.5 nm s -1 and substrate temperature of 300 C. (orig.)

Lipase biofilm deposited by Matrix Assisted Pulsed Laser Evaporation technique

International Nuclear Information System (INIS)

Aronne, Antonio; Bloisi, Francesco; Calabria, Raffaela; Califano, Valeria; Depero, Laura E.; Fanelli, Esther; Federici, Stefania; Massoli, Patrizio; Vicari, Luciano R.M.

2015-01-01

Highlights: • A lipase film was deposited with Matrix Assisted Pulsed Laser Evaporation technique. • FTIR spectra show that laser irradiation do not damage lipase molecule. • Laser fluence controls the characteristics of complex structure generated by MAPLE. - Abstract: Lipase is an enzyme that finds application in biodiesel production and for detection of esters and triglycerides in biosensors. Matrix Assisted Pulsed Laser Evaporation (MAPLE), a technique derived from Pulsed Laser Deposition (PLD) for deposition of undamaged biomolecules or polymers, is characterized by the use of a frozen target obtained from a solution/suspension of the guest material (to be deposited) in a volatile matrix (solvent). The presence of the solvent avoids or at least reduces the potential damage of guest molecules by laser radiation but only the guest material reaches the substrate in an essentially solvent-free deposition. MAPLE can be used for enzymes immobilization, essential for industrial application, allowing the development of continuous processes, an easier separation of products, the reuse of the catalyst and, in some cases, enhancing enzyme properties (pH, temperature stability, etc.) and catalytic activity in non-aqueous media. Here we show that MAPLE technique can be used to deposit undamaged lipase and that the complex structure (due to droplets generated during extraction from target) of the deposited material can be controlled by changing the laser beam fluence

Lipase biofilm deposited by Matrix Assisted Pulsed Laser Evaporation technique

Energy Technology Data Exchange (ETDEWEB)

Aronne, Antonio [Department of Chemical Engineering, Materials and Industrial Production, University of Naples “Federico II”, Napoli (Italy); Bloisi, Francesco, E-mail: bloisi@na.infn.it [SPIN – CNR, Naples (Italy); Department of Physics, University of Naples “Federico II”, Napoli (Italy); Calabria, Raffaela; Califano, Valeria [Istituto Motori – CNR, Naples (Italy); Depero, Laura E. [Department of Mechanical and Industrial Engineering, University of Brescia, Brescia (Italy); Fanelli, Esther [Department of Chemical Engineering, Materials and Industrial Production, University of Naples “Federico II”, Napoli (Italy); Federici, Stefania [Department of Mechanical and Industrial Engineering, University of Brescia, Brescia (Italy); Massoli, Patrizio [Istituto Motori – CNR, Naples (Italy); Vicari, Luciano R.M. [SPIN – CNR, Naples (Italy); Department of Physics, University of Naples “Federico II”, Napoli (Italy)

2015-05-01

Highlights: • A lipase film was deposited with Matrix Assisted Pulsed Laser Evaporation technique. • FTIR spectra show that laser irradiation do not damage lipase molecule. • Laser fluence controls the characteristics of complex structure generated by MAPLE. - Abstract: Lipase is an enzyme that finds application in biodiesel production and for detection of esters and triglycerides in biosensors. Matrix Assisted Pulsed Laser Evaporation (MAPLE), a technique derived from Pulsed Laser Deposition (PLD) for deposition of undamaged biomolecules or polymers, is characterized by the use of a frozen target obtained from a solution/suspension of the guest material (to be deposited) in a volatile matrix (solvent). The presence of the solvent avoids or at least reduces the potential damage of guest molecules by laser radiation but only the guest material reaches the substrate in an essentially solvent-free deposition. MAPLE can be used for enzymes immobilization, essential for industrial application, allowing the development of continuous processes, an easier separation of products, the reuse of the catalyst and, in some cases, enhancing enzyme properties (pH, temperature stability, etc.) and catalytic activity in non-aqueous media. Here we show that MAPLE technique can be used to deposit undamaged lipase and that the complex structure (due to droplets generated during extraction from target) of the deposited material can be controlled by changing the laser beam fluence.

Influence of laser power on atom probe tomographic analysis of boron distribution in silicon

Energy Technology Data Exchange (ETDEWEB)

Tu, Y., E-mail: ytu@imr.tohoku.ac.jp [The Oarai Center, Institute for Materials Research, Tohoku University, Oarai, Ibaraki 311-1313 (Japan); Takamizawa, H.; Han, B.; Shimizu, Y.; Inoue, K.; Toyama, T. [The Oarai Center, Institute for Materials Research, Tohoku University, Oarai, Ibaraki 311-1313 (Japan); Yano, F. [The Oarai Center, Institute for Materials Research, Tohoku University, Oarai, Ibaraki 311-1313 (Japan); Tokyo City University, Setagaya, Tokyo 158-8557 (Japan); Nishida, A. [Renesas Electronics Corporation, Hitachinaka, Ibaraki 312-8504 (Japan); Nagai, Y. [The Oarai Center, Institute for Materials Research, Tohoku University, Oarai, Ibaraki 311-1313 (Japan)

2017-02-15

The relationship between the laser power and the three-dimensional distribution of boron (B) in silicon (Si) measured by laser-assisted atom probe tomography (APT) is investigated. The ultraviolet laser employed in this study has a fixed wavelength of 355 nm. The measured distributions are almost uniform and homogeneous when using low laser power, while clear B accumulation at the low-index pole of single-crystalline Si and segregation along the grain boundaries in polycrystalline Si are observed when using high laser power (100 pJ). These effects are thought to be caused by the surface migration of atoms, which is promoted by high laser power. Therefore, for ensuring a high-fidelity APT measurement of the B distribution in Si, high laser power is not recommended. - Highlights: • Influence of laser power on atom probe tomographic analysis of B distribution in Si is investigated. • When using high laser power, inhomogeneous distributions of B in single-crystalline and polycrystalline Si are observed. • Laser promoted migration of B atoms over the specimen is proposed to explain these effects.

Ellipsometric study of nanostructured carbon films deposited by pulsed laser deposition

International Nuclear Information System (INIS)

Bereznai, M.; Budai, J.; Hanyecz, I.; Kopniczky, J.; Veres, M.; Koos, M.; Toth, Z.

2011-01-01

When depositing carbon films by plasma processes the resulting structure and bonding nature strongly depends on the plasma energy and background gas pressure. To produce different energy plasma, glassy carbon targets were ablated by laser pulses of different excimer lasers: KrF (248 nm) and ArF (193 nm). To modify plume characteristics argon atmosphere was applied. The laser plume was directed onto Si substrates, where the films were grown. To evaluate ellipsometric measurements first a combination of the Tauc-Lorentz oscillator and the Sellmeier formula (TL/S) was applied. Effective Medium Approximation models were also used to investigate film properties. Applying argon pressures above 10 Pa the deposits became nanostructured as indicated by high resolution scanning electron microscopy. Above ∼ 100 and ∼ 20 Pa films could not be deposited by KrF and ArF laser, respectively. Our ellipsometric investigations showed, that with increasing pressure the maximal refractive index of both series decreased, while the optical band gap starts with a decrease, but shows a non monotonous course. Correlation between the size of the nanostructures, bonding structure, which was followed by Raman spectroscopy and optical properties were also investigated.

Increased charge storage capacity of titanium nitride electrodes by deposition of boron-doped nanocrystalline diamond films

DEFF Research Database (Denmark)

Meijs, Suzan; McDonald, Matthew; Sørensen, Søren

2015-01-01

The aim of this study was to investigate the feasibility of depositing a thin layer of boron-doped nanocrystalline diamond (B-NCD) on titanium nitride (TiN) coated electrodes and the effect this has on charge injection properties. The charge storage capacity increased by applying the B-NCD film...

Reduced-pressure chemical vapor deposition of boron-doped Si and Ge layers

International Nuclear Information System (INIS)

Bogumilowicz, Y.; Hartmann, J.M.

2014-01-01

We have studied the in-situ boron (B) doping of germanium (Ge) and silicon (Si) in Reduced Pressure-Chemical Vapor Deposition. Three growth temperatures have been investigated for the B-doping of Ge: 400, 600 and 750 °C at a constant growth pressure of 13300 Pa (i.e. 100 Torr). The B concentration in the Ge:B epilayer increases linearly with the diborane concentration in the gaseous phase. Single-crystalline Ge:B layers with B concentrations in-between 9 ∙ 10 17 and 1 ∙ 10 20 cm −3 were achieved. For the in-situ B doping of Si at 850 °C, two dichlorosilane mass flow ratios (MFR) have been assessed: F[SiH 2 Cl 2 ]/F[H 2 ] = 0.0025 and F[SiH 2 Cl 2 ]/F[H 2 ] = 0.0113 at a growth pressure of 2660 Pa (i.e. 20 Torr). Linear boron incorporation with the diborane concentration in the gas phase has been observed and doping levels in-between 3.5 ∙ 10 17 and 1 ∙ 10 20 cm −3 were achieved. We almost kept the same ratio of B versus Si atoms in the gas phase and in the Si epilayer. By contrast, roughly half of the B atoms present in the gas phase were incorporated in the Ge:B layers irrespective of the growth temperature. X-Ray Diffraction (XRD) allowed us to extract from the angular position of the Ge:B layer diffraction peak the substitutional B concentration. Values close to the B concentrations obtained by 4-probe resistivity measurements were obtained. Ge:B layers were smooth (< 1 m root mean square roughness associated with 20 × 20 μm 2 Atomic Force Microscopy images). Only for high F[B 2 H 6 ]/F[GeH 4 ] MFR (3.2 10 −3 ) did the Ge:B layers became rough; they were however still mono-crystalline (XRD). Above this MFR value, Ge:B layers became polycrystalline. - Highlights: • Boron doping of germanium and silicon in Reduced Pressure-Chemical Vapor Deposition • Linear boron incorporation in Ge:B and Si:B with the diborane flow • Single-crystal Ge:B layers with B concentrations in-between 9 ∙ 10 17 and 1 ∙ 10 20 cm −3 • Single-crystal Si

Pulsed Laser Deposition of Tungsten Thin Films on Graphite

International Nuclear Information System (INIS)

Kassem, W.; Tabbal, M.; Roumie, M.

2011-01-01

Thin coatings of Tungsten were deposited on substrates fabricated by pre-depositing graphite thin layers on Si(100) wafers. We ablate pure W target using a 20 ns KrF excimer laser (248 nm) in an Ar ambient. The effect of background gas pressure, substrate temperature, and laser fluence, on the properties of the deposited W layers is studied using several techniques including X-Ray Diffraction, Atomic Force Microscopy, surface profilometry, and Rutherford Back-Scattering spectrometry. Our results indicate that the deposited layers consist of the well-crystallized body-centered-cubic α-W phase with bulk-like properties, particularly for films deposited at a substrate temperature of 450 0 C, laser fluence greater than 400mJ, and pressure of about 10mTorr. (author)

Pulsed Laser Deposition: passive and active waveguides

Czech Academy of Sciences Publication Activity Database

Jelínek, Miroslav; Flory, F.; Escoubas, L.

2009-01-01

Roč. 34, č. 4 (2009), s. 438-449 ISSN 0268-1900 R&D Projects: GA ČR GA202/06/0216 Institutional research plan: CEZ:AV0Z10100522 Keywords : PLD * pulsed laser deposition * laser ablation * passive waveguides * active waveguides * waveguide laser * sensors * thin films * butane detection Subject RIV: BH - Optics, Masers, Lasers Impact factor: 0.384, year: 2009

Femtosecond and nanosecond pulsed laser deposition of silicon and germanium

Energy Technology Data Exchange (ETDEWEB)

Reenaas, Turid Worren [Department of Physics, Norwegian University of Science and Technology, 7491 Trondheim (Norway); Lee, Yen Sian [Department of Mechanical Engineering, Faculty of Engineering, University of Malaya, 50603 Kuala Lumpur (Malaysia); Department of Physics, Faculty of Science, University of Malaya, 50603 Kuala Lumpur (Malaysia); Chowdhury, Fatema Rezwana; Gupta, Manisha; Tsui, Ying Yin [Department of Electrical and Computer Engineering, University of Alberta (Canada); Tou, Teck Yong [Faculty of Engineering, Multimedia University, 63100 Cyberjaya, Selangor (Malaysia); Yap, Seong Ling [Department of Physics, Faculty of Science, University of Malaya, 50603 Kuala Lumpur (Malaysia); Kok, Soon Yie [Faculty of Engineering, Multimedia University, 63100 Cyberjaya, Selangor (Malaysia); Yap, Seong Shan, E-mail: seongshan@gmail.com [Department of Mechanical Engineering, Faculty of Engineering, University of Malaya, 50603 Kuala Lumpur (Malaysia)

2015-11-01

Highlights: • Ge and Si were deposited by fs and ns laser at room temperature and at vacuum. • Ion of 10{sup 4} ms{sup −1} and 30–200 eV was obtained for ns ablation for Ge and Si. • Highly energetic ions of 10{sup 5} ms{sup −1} with 2–7 KeV were produced in fs laser ablation. • Nanocrystalline Si and Ge were deposited by using fs laser. • Nanoparticles < 10 nm haven been obtained by fs laser. - Abstract: 150 fs Ti:Sapphire laser pulsed laser deposition of Si and Ge were compared to a nanosecond KrF laser (25 ns). The ablation thresholds for ns lasers were about 2.5 J cm{sup −2} for Si and 2.1 J cm{sup −2} for Ge. The values were about 5–10 times lower when fs laser were used. The power densities were 10{sup 8}–10{sup 9} W cm{sup −2} for ns but 10{sup 12} W cm{sup −2} for fs. By using an ion probe, the ions emission at different fluence were measured where the emitting ions achieving the velocity in the range of 7–40 km s{sup −1} and kinetic energy in the range of 30–200 eV for ns laser. The ion produced by fs laser was measured to be highly energetic, 90–200 km s{sup −1}, 2–10 KeV. Two ion peaks were detected above specific laser fluence for both ns and fs laser ablation. Under fs laser ablation, the films were dominated by nano-sized crystalline particles, drastically different from nanosecond pulsed laser deposition where amorphous films were obtained. The ions characteristics and effects of pulse length on the properties of the deposited films were discussed.

Laser shock processing on microstructure and hardness of polycrystalline cubic boron nitride tools with and without nanodiamond powders

International Nuclear Information System (INIS)

Melookaran, Roslyn; Melaibari, Ammar; Deng, Cheng; Molian, Pal

2012-01-01

Highlights: ► Laser shock waves hardened polycrystalline cubic boron nitride tools by up to 15%. ► Laser shock waves can build layer-by-layer of nanodiamond to form micro-diamond tools. ► Multiple laser shocks induce significant phase transitions in cBN and nanodiamond. -- Abstract: High amplitude, short duration shock waves created by a 1064 nm, 10 ns Q-switched Nd:YAG laser were used to increase the hardness as well as build successive layers of nanodiamond on sintered polycrystalline cubic boron nitride (PcBN) tools. Multiple scans of laser shocking were applied. Scanning electron microscopy, Raman spectroscopy, Tukon microhardness tester, and optical surface profilometer were used to evaluate the microstructure, phase change, Vicker’s microhardness and surface roughness. Results indicated that laser shock processing of plain PcBN changed the binder concentration, caused phase transition from cubic to hexagonal form, increased the hardness, and almost unaffected surface roughness. Laser shock wave sintering of nanodiamond powders on PcBN resulted in deagglomeration and layer-by-layer build-up of nanoparticles for a thickness of 30 μm inferring that a novel solid freeform technique designated as “shock wave induced freeform technique (SWIFT)” is being discovered for making micro-tools. Depending on the number of multiple laser shocks, the hardness of nanodiamond compact was lower or higher than that of PcBN. It is hypothesized that nanodiamond particles could serve as crack deflectors, increasing the fracture toughness of PcBN.

Corrosion behaviour of layers obtained by nitrogen implantation into boron films deposited onto iron substrates

International Nuclear Information System (INIS)

Marchetti, F.; Fedrizzi, L.; Giacomozzi, F.; Guzman, L.; Borgese, A.

1985-01-01

The electrochemical behaviour and corrosion resistance of boron films deposited onto Armco iron after bombardment with 100 keV N + ions were determined in various test solutions. The changes in the electrochemical parameters give evidence of lower anodic dissolution rates for the treated samples. Scanning electron microscopy and Auger analysis of the corroded surfaces confirm the presence of protective layers. (Auth.)

Pulsed laser deposition of Tl-Ca-Ba-Cu-O films

International Nuclear Information System (INIS)

Ianno, N.J.; Liou, S.H.; Woollam, J.A.; Thompson, D.; Johs, B.

1990-01-01

Pulsed laser deposition is a technique commonly used to deposit high quality thin films of high temperature superconductors. This paper discusses the results obtained when this technique is applied to the deposition of Tl-Ca-Ba-Cu-O thin films using a frequency doubled Nd:YAG laser operating at 532 nm and an excimer laser operating at 248 nm. Films with onset temperatures of 125 K and zero resistance temperatures of 110 K deposited on (100) oriented MgO from a composite Tl2Ca2Ba2Cu3Ox target were obtained at both wavelengths upon appropriate post deposition annealing. Films deposited at 532 nm exhibit a rough surface, while those deposited at 248 nm are smooth and homogeneous. Upon annealing, films deposited at both wavelengths are single phase Tl2Ca2Ba2Cu3Ox. 12 refs

Erosion of CFC, pyrolytic and boronated graphite under short pulsed laser irradiation

International Nuclear Information System (INIS)

Kraaij, G.J.; Bakker, J.; Stad, R.C.L. van der

1992-07-01

The effect of short pulsed laser irradiation of '0/3' ms and up to 10 MJ/m 2 on different types of carbon base materials is described. These materials are investigated as candidate protection materials for the Plasma Facing Components of NET/ITER. These materials are: carbon fibre composite graphite, pyrolytic graphite and boronated graphite. The volume of the laser induced craters was measured with an optical topographic scanner, and these data are evaluated with a simple model for the erosion. As a results, the enthalpy of ablation is estimated as 30±3 MJ/kg. A comparison is made with finite element numerical calculations, and the effect of lateral heat transfer is estimated using an analytical model. (author). 8 refs., 23 figs., 4 tabs

Towards laser spectroscopy of the proton-halo candidate boron-8

Energy Technology Data Exchange (ETDEWEB)

Maaß, Bernhard, E-mail: bmaass@ikp.tu-darmstadt.de [Technische Universität Darmstadt, Institut für Kernphysik (Germany); Müller, Peter [Argonne National Laboratory, Physics Division (United States); Nörtershäuser, Wilfried [Technische Universität Darmstadt, Institut für Kernphysik (Germany); Clark, Jason [Argonne National Laboratory, Physics Division (United States); Gorges, Christian; Kaufmann, Simon; König, Kristian; Krämer, Jörg [Technische Universität Darmstadt, Institut für Kernphysik (Germany); Levand, Anthony; Orford, Rodney [Argonne National Laboratory, Physics Division (United States); Sánchez, Rodolfo [GSI Helmholtzzentrum für Schwerionenforschung (Germany); Savard, Guy [Argonne National Laboratory, Physics Division (United States); Sommer, Felix [Technische Universität Darmstadt, Institut für Kernphysik (Germany)

2017-11-15

We propose to determine the nuclear charge radius of {sup 8}B by high-resolution laser spectroscopy. {sup 8}B (t {sub 1/2} = 770 ms) is perhaps the best candidate of a nucleus exhibiting an extended proton wave-function or “one-proton-halo” in a more descriptive picture. Laser spectroscopic measurements of the isotope shift will be used to probe the change in nuclear charge radius along the three boron isotopes {sup 8}B, {sup 10}B and {sup 11}B. The change in nuclear charge radius directly correlates with the extent of the proton wave function. In-flight production and preparation of sufficient yields of {sup 8}B ions at low energies is provided by the Argonne Tandem Linac Accelerator System (ATLAS) at Argonne National Laboratory (ANL) in Chicago, IL, USA. Subsequently, the ions will be guided through a charge exchange cell for neutralization and the fluorescence signal of the atoms which interact with the resonant laser light will be detected. The charge radius can then be extracted from the measured isotope shift by employing highly accurate atomic theory calculations of this five-electron system which are carried out presently.

Laser chemical vapor deposition of millimeter scale three-dimensional shapes

Science.gov (United States)

Shaarawi, Mohammed Saad

2001-07-01

Laser chemical vapor deposition (LCVD) has been successfully developed as a technique to synthesize millimeter-scale components directly from the gas phase. Material deposition occurs when heat generated by the interaction of a laser beam with a substrate thermally decomposes the gas precursor. Selective illumination or scanning the laser beam over portions of a substrate forms the single thin layer of material that is the building block of this process. Sequential scanning of the laser in a pre-defined pattern on the substrate and subsequent deposit causes the layers to accumulate forming the three-dimensional shape. The primary challenge encountered in LCVD shape forming is the synthesis of uniform layers. Three deposition techniques are studied to address this problem. The most successful technique, Active Surface Deposition, is based on the premise that the most uniform deposits are created by measuring the deposition surface topology and actively varying the deposition rate in response to features at the deposition surface. Defects observed in the other techniques were significantly reduced or completely eliminated using Active Surface Deposition. The second technique, Constant Temperature Deposition, maintains deposit uniformity through the use of closed-loop modulation of the laser power to sustain a constant surface temperature during deposition. The technique was successful in depositing high quality graphite tubes >2 mm tall from an acetylene precursor and partially successful in depositing SiC + C composite tubes from tetramethylsilane (TMS). The final technique, Constant Power Deposition, is based on the premise that maintaining a uniform power output throughout deposition would result in the formation of uniform layers. Constant Power Deposition failed to form coherent shapes. Additionally, LCVD is studied using a combination of analytic and numerical models to gain insight into the deposition process. Thermodynamic modeling is used to predict the

Influence of laser irradiation on deposition characteristics of cold sprayed Stellite-6 coatings

Science.gov (United States)

Li, Bo; Jin, Yan; Yao, Jianhua; Li, Zhihong; Zhang, Qunli; Zhang, Xin

2018-03-01

Depositing hard materials such as Stellite-6 solely by cold spray (CS) is challengeable due to limited ability of plastic deformation. In this study, the deposition of Stellite-6 powder was achieved by supersonic laser deposition (SLD) which combines CS with synchronous laser irradiation. The surface morphology, deposition efficiency, track shape of Stellite-6 coatings produced over a range of laser irradiation temperatures were examined so as to reveal the effects of varying laser energy inputting on the deposition process of high strength material. The microstructure, phase composition and wear/corrosion resistant properties of the as-deposited Stellite-6 coatings were also investigated. The experimental results demonstrate that the surface flatness and deposition efficiency increase with laser irradiation temperature due to the softening effect induced by laser heating. The as-deposited Stellite-6 tracks show asymmetric shapes which are influenced by the relative configuration of powder stream and laser beam. The SLD coatings can preserve the original microstructure and phase of the feedstock material due to relatively low laser energy inputting, which result in the superior wear/corrosion resistant properties as compared to the counterpart prepared by laser cladding.

Deposition of thin layers of boron nitrides and hydrogenated microcrystalline silicon assisted by high current direct current arc plasma; Deposition assistee par un plasma a arc a haut courant continu de couches minces de Nitrure de Bore et de Silicium microcristallin hydrogene

Energy Technology Data Exchange (ETDEWEB)

Franz, D. [Ecole Polytechnique Federale de Lausanne, Centre de Recherches en Physique des Plasmas (CRPP), CH-1015 Lausanne (Switzerland)

1999-09-01

In the frame of this thesis, a high current direct current arc (HCDCA) used for the industrial deposition of diamond, has been adapted to study the deposition of two types of coatings: a) boron nitride, whose cubic phase is similar to diamond, for tribological applications, b) hydrogenated microcrystalline silicon, for applications in the semiconductor fields (flat panel displays, solar cells,...). For the deposition of these coatings, the substrates were placed in the diffusion region of the arc. The substrate heating is mainly due to atomic species recombining on its surface. The deposition temperature, varying from 300 to 900 {sup o}C according to the films deposited, is determined by the substrate position, the arc power and the injected gas fluxes, without the use of any external heating or cooling system. Measurements performed on the arc plasma show that the electronic temperature is around 2 eV (23'000 K) while the gas temperature is lower than 5500 K. Typical electronic densities are in the range of 10{sup 12}-10{sup 1'}3 cm{sup -3}. For the deposition of boron nitride films, different boron precursors were used and a wide parameter range was investigated. The extreme difficulty of synthesising cubic boron nitride films by chemical vapour deposition (CVD) did not allow to stabilize the cubic phase of boron nitride in HCDCA. Coatings resulted in hexagonal or amorphous boron nitride with a chemical composition close to stoichiometric. The presence of hydrogen leads to the deposition of rough and porous films. Negative biasing of the samples, for positive ion bombardment, is commonly used to stabilize the cubic phase. In HCDCA and in our biasing range, only a densification of the films could be observed. A boron nitride deposition plasma study by infrared absorption spectroscopy in a capacitive radio frequency reactor has demonstrated the usefulness of this diagnostic for the understanding of the various chemical reactions which occur in this kind

Pulsed laser ablation and deposition of niobium carbide

International Nuclear Information System (INIS)

Sansone, M.; De Bonis, A.; Santagata, A.; Rau, J.V.; Galasso, A.; Teghil, R.

2016-01-01

Highlights: • We have deposited in vacuum niobium carbide films by fs and ns PLD. • We have compared PLD performed by ultra-short and short laser pulses. • The films deposited by fs PLD of NbC are formed by nanoparticles. • The structure of the films produced by fs PLD at 500 °C corresponds to NbC. - Abstract: NbC crystalline films have been deposited in vacuum by ultra-short pulsed laser deposition technique. The films have been characterized by transmission and scanning electron microscopies and by X-ray diffraction. To clarify the ablation–deposition mechanism, the plasma produced by the ablation process has been characterized by optical emission spectroscopy and fast imaging. A comparison of the results with those obtained by ns pulsed deposition of the same target has been carried out.

Deposition of boron doped DLC films on TiNb and characterization of their mechanical properties and blood compatibility.

Science.gov (United States)

Liza, Shahira; Hieda, Junko; Akasaka, Hiroki; Ohtake, Naoto; Tsutsumi, Yusuke; Nagai, Akiko; Hanawa, Takao

2017-01-01

Diamond-like carbon (DLC) material is used in blood contacting devices as the surface coating material because of the antithrombogenicity behavior which helps to inhibit platelet adhesion and activation. In this study, DLC films were doped with boron during pulsed plasma chemical vapor deposition (CVD) to improve the blood compatibility. The ratio of boron to carbon (B/C) was varied from 0 to 0.4 in the film by adjusting the flow rate of trimethylboron and acetylene. Tribological tests indicated that boron doping with a low B/C ratio of 0.03 is beneficial for reducing friction (μ = 0.1), lowering hardness and slightly increasing wear rate compared to undoped DLC films. The B/C ratio in the film of 0.03 and 0.4 exhibited highly hydrophilic surface owing to their high wettability and high surface energy. An in vitro platelet adhesion experiment was conducted to compare the blood compatibility of TiNb substrates before and after coating with undoped and boron doped DLC. Films with highly hydrophilic surface enhanced the blood compatibility of TiNb, and the best results were obtained for DLC with the B/C ratio of 0.03. Boron doped DLC films are promising surface coatings for blood contacting devices.

Wafer-scale laser lithography. I. Pyrolytic deposition of metal microstructures

International Nuclear Information System (INIS)

Herman, I.P.; Hyde, R.A.; McWilliams, B.M.; Weisberg, A.H.; Wood, L.L.

1982-01-01

Mechanisms for laser-driven pyrolytic deposition of micron-scale metal structures on crystalline silicon have been studied. Models have been developed to predict temporal and spatial propeties of laser-induced pyrolytic deposition processes. An argon ion laser-based apparatus has been used to deposit metal by pyrolytic decomposition of metal alkyl and carbonyl compounds, in order to evaluate the models. These results of these studies are discussed, along with their implications for the high-speed creation of micron-scale metal structures in ultra-large scale integrated circuit systems. 4 figures

Matrix shaped pulsed laser deposition: New approach to large area and homogeneous deposition

Energy Technology Data Exchange (ETDEWEB)

Akkan, C.K.; May, A. [INM – Leibniz Institute for New Materials, CVD/Biosurfaces Group, Campus D2 2, 66123 Saarbrücken (Germany); Hammadeh, M. [Department for Obstetrics, Gynecology and Reproductive Medicine, IVF Laboratory, Saarland University Medical Center and Faculty of Medicine, Building 9, 66421 Homburg, Saar (Germany); Abdul-Khaliq, H. [Clinic for Pediatric Cardiology, Saarland University Medical Center and Faculty of Medicine, Building 9, 66421 Homburg, Saar (Germany); Aktas, O.C., E-mail: cenk.aktas@inm-gmbh.de [INM – Leibniz Institute for New Materials, CVD/Biosurfaces Group, Campus D2 2, 66123 Saarbrücken (Germany)

2014-05-01

Pulsed laser deposition (PLD) is one of the well-established physical vapor deposition methods used for synthesis of ultra-thin layers. Especially PLD is suitable for the preparation of thin films of complex alloys and ceramics where the conservation of the stoichiometry is critical. Beside several advantages of PLD, inhomogeneity in thickness limits use of PLD in some applications. There are several approaches such as rotation of the substrate or scanning of the laser beam over the target to achieve homogenous layers. On the other hand movement and transition create further complexity in process parameters. Here we present a new approach which we call Matrix Shaped PLD to control the thickness and homogeneity of deposited layers precisely. This new approach is based on shaping of the incoming laser beam by a microlens array and a Fourier lens. The beam is split into much smaller multi-beam array over the target and this leads to a homogenous plasma formation. The uniform intensity distribution over the target yields a very uniform deposit on the substrate. This approach is used to deposit carbide and oxide thin films for biomedical applications. As a case study coating of a stent which has a complex geometry is presented briefly.

Properties of pulsed laser deposited NiO/MWCNT thin films

CSIR Research Space (South Africa)

Yalisi, B

2011-05-01

Full Text Available Pulsed laser deposition (PLD) is a thin-film deposition technique, which uses short and intensive laser pulses to evaporate target material. The technique has been used in this work to produce selective solar absorber (SSA) thin film composites...

Electronic properties of p-GaAs deposited on n-Si with pulsed-laser deposition

International Nuclear Information System (INIS)

Ullrich, B; Erlacher, A; Smith, H E; Mitchel, W C; Brown, G J

2008-01-01

By means of nanosecond laser pulses at 355, 532, and 1064 nm, p(Zn)-type GaAs was ablated and deposited on n-type Si. The samples showed rectification and Hall measurements established that the deposited material was p-type, but the active-doping concentration was six orders of magnitude below the target value. Because secondary-ion mass spectroscopy results indicated stoichiometric material transfer, we concluded that most of the Zn atoms do not act as acceptors because of the amorphous film texture. The work further showed indications that pulsed-laser deposition at 355 nm causes enhanced Si diffusion into the deposited film, compared to the ablations done at 532 and 1064 nm

Particulate generation during pulsed laser deposition of superconductor thin films

International Nuclear Information System (INIS)

Singh, R.K.

1993-01-01

The nature of evaporation/ablation characteristics during pulsed laser deposition strongly controls the quality of laser-deposited films. To understand the origin of particulates in laser deposited films, the authors have simulated the thermal history of YBa 2 Cu 3 O 7 targets under intense nanosecond laser irradiation by numerically solving the heat flow equation with appropriate boundary conditions. During planar surface evaporation of the target material, the sub-surface temperatures were calculated to be higher than the surface temperatures. While the evaporating surface of the target is constantly being cooled due to the latent heat of vaporization, subsurface superheating occurs due to the finite absorption depth of the laser beam. Sub-surface superheating was found to increase with decreasing absorption coefficient and thermal conductivity of the target, and with increasing energy density. The superheating may lead to sub-surface nucleation and growth of the gaseous phase which can expand rapidly leading to microexplosions and ''volume expulsion'' of material from the target. Experiments conducted by the authors and other research groups suggest a strong relation between degree of sub-surface superheating and particle density in laser-deposited films

Tritium recovery from co-deposited layers using 193-nm laser

Science.gov (United States)

Shu, W. M.; Kawakubo, Y.; Nishi, M. F.

Recovery of tritium from co-deposited layers formed in deuterium-tritium plasma operations of the TFTR (Tokamak Fusion Test Reactor) was investigated by the use of an ArF excimer laser operating at the wavelength of 193 nm. At the laser energy density of 0.1 J/cm2, a transient spike of the tritium-release rate was observed at initial irradiation. Hydrogen isotopes were released in the form of hydrogen-isotope molecules during the laser irradiation in vacuum, suggesting that tritium can be recovered readily from the released gases. In a second experiment, hydrogen (tritium) recovery from the co-deposited layers on JT-60 tiles that had experienced hydrogen-plasma operations was investigated by laser ablation with a focused beam of the excimer laser. The removal rate of the co-deposited layers was quite low when the laser energy density was smaller than the ablation threshold (1.0 J/cm2), but reached 1.1 μm/pulse at the laser energy density of 7.6 J/cm2. The effective absorption coefficient in the co-deposited layers at the laser wavelength was determined to be 1.9 μm-1. The temperature of the surface during the irradiation at the laser energy density of 0.5 J/cm2 was measured on the basis of Planck's law of radiation, and the maximum temperature during the irradiation decreased from 3570 K at the initial irradiation to 2550 K at the 1000th pulse of the irradiation.

Reactive pulsed laser deposition with gas jet

International Nuclear Information System (INIS)

Rakowski, R.; Bartnik, A.; Fiedorowicz, H.; Jarocki, R.; Kostecki, J.; Szczurek, M.

2001-01-01

Different metal (Sn, Al, steel, Cu, W) thin films were synthesized by reactive pulsed laser deposition on steel, copper and glass wafers. In our work pulsed Nd:glass (10 J, 800μs) laser system was used. Jet of gas was created by electromagnetic valve perpendicularly to the laser beam. Nitrogen, oxygen and argon were used. We used several to tens laser shots to obtain visible with the naked eye layers. Thin layers were observed under an optical microscope. (author)

UV laser deposition of metal films by photogenerated free radicals

Science.gov (United States)

Montgomery, R. K.; Mantei, T. D.

1986-01-01

A novel photochemical method for liquid-phase deposition of metal films is described. In the liquid phase deposition scheme, a metal containing compound and a metal-metal bonded carbonyl complex are dissolved together in a polar solvent and the mixture is irradiated using a UV laser. The optical arrangement consists of a HeCd laser which provides 7 mW of power at a wavelength of 325 nm in the TEM(OO) mode. The beam is attenuated and may be expanded to a diameter of 5-20 mm. Experiments with photochemical deposition of silver films onto glass and quartz substrates are described in detail. Mass spectrometric analysis of deposited silver films indicated a deposition rate of about 1 A/s at incident power levels of 0.01 W/sq cm. UV laser-induced copper and palladium films have also been obtained. A black and white photograph showing the silver Van Der Pauw pattern of a solution-deposited film is provided.

Synthesis and characterization of boron incorporated diamond-like carbon thin films

International Nuclear Information System (INIS)

Zhang, L.L.; Yang, Q.; Tang, Y.; Yang, L.; Zhang, C.; Hu, Y.; Cui, X.

2015-01-01

Boron incorporated diamond-like carbon (B-DLC) (up to 8 wt.% boron) thin films were synthesized on silicon wafers using biased target ion beam deposition technique, where diamond-like carbon (DLC) was deposited by ion beam deposition and boron (B) was simultaneously incorporated by biased target sputtering of a boron carbide (B 4 C) target under different conditions. Pure DLC films and B–C films were also synthesized by ion beam deposition and biased target sputtering of B 4 C under similar conditions, respectively, as reference samples. The microstructure and mechanical properties of the synthesized films have been characterized by various technologies. It has been found that B exists in different states in B-DLC, including carbon-rich and B-rich boron carbides, boron suboxide and boron oxide, and the oxidation of B probably occurs during the film deposition. The incorporation of B into DLC leads to the increase of sp 3 bonded carbon in the films, the increase of both film hardness and elastic modulus, and the decrease of both surface roughness and friction coefficient. Furthermore, the content of sp 3 bonded carbon, film hardness and elastic modulus increase, and the film surface roughness and friction coefficient decrease with the increase of B-rich carbide in the B-DLC films. - Highlights: • Biased target ion beam deposition technique is promising to produce high quality DLC based thin films; • Boron exists in different states in B-DLC thin films; • The incorporation of B to DLC with different levels leads to improved film properties; • The fraction of sp 3 bonded C in B-DLC thin films increase with the increase of B-rich carbide content in the films

Laser sintered thin layer graphene and cubic boron nitride reinforced nickel matrix nanocomposites

Science.gov (United States)

Hu, Zengrong; Tong, Guoquan

2015-10-01

Laser sintered thin layer graphene (Gr)-cubic boron nitride (CBN)-Ni nanocomposites were fabricated on AISI 4140 plate substrate. The composites fabricating process, composites microstructure and mechanical properties were studied. Scanning electron microscopy (SEM), X-ray diffraction (XRD) and Raman spectroscopy were employed to study the micro structures and composition of the composites. XRD and Raman tests proved that graphene and CBN were dispersed in the nanocomposites. Nanoindentation test results indicate the significant improvements were achieved in the composites mechanical properties.

Characterization of laser metal deposited 316L stainless steel

CSIR Research Space (South Africa)

Bayode, A

2016-06-01

Full Text Available investigates the effects of laser power on the structural integrity, microstructure and microhardness of laser deposited 316L stainless steel. The result showed that the laser power has much influence on the evolving microstructure and microhardness...

Effect of laser beam parameters on magnetic properties of Nd-Fe-B thick-film magnets fabricated by pulsed laser deposition

International Nuclear Information System (INIS)

Fukunaga, H.; Nakano, M.; Yanai, T.; Kamikawatoko, T.; Yamashita, F.

2011-01-01

The effects of varying the laser power and the spot diameter of a laser beam on the magnetic properties, morphology, and deposition rate of Nd-Fe-B thick-film magnets fabricated by pulsed laser deposition (PLD) were investigated. Reducing the laser fluence on the target reduces the remanence and increases the Nd content and consequently the coercivity of the prepared films. The spot size of the laser beam was found to affect the film surface morphology, the deposition rate, and the reproducibility of the magnetic properties of the prepared films. Reducing the spot size reduces the number of droplets and the reproducibility of the magnetic properties and increases the droplet size. Controlling the spot size of the laser beam enabled us to maximize the deposition rate. Consequently, a coercivity of 1210 kA/m and a remanence of 0.51 T were obtained at a deposition rate of 11.8 μm/(h·W). This deposition rate is 30% greater than the highest previously reported deposition rate by PLD.

Boron-doped nanodiamonds as possible agents for local hyperthermia

Science.gov (United States)

Vervald, A. M.; Burikov, S. A.; Vlasov, I. I.; Ekimov, E. A.; Shenderova, O. A.; Dolenko, T. A.

2017-04-01

In this work, the effective heating of surrounding water by heavily-boron-doped nanodiamonds (NDs) under laser irradiation of visible wavelength was found. Using Raman scattering spectroscopy of aqueous suspensions of boron-doped NDs, it was found that this abnormally high heating results in the weakening of hydrogen bonds much more so (2-5 times stronger) than for undoped NDs. The property of boron-doped NDs to heat a solvent under the influence of laser radiation (1-5 W cm-2) opens broad prospects for their use to create nanoagents for medical oncology and local hyperthermia.

Hydroxyapatite thin films grown by pulsed laser deposition and matrix assisted pulsed laser evaporation: Comparative study

Science.gov (United States)

Popescu-Pelin, G.; Sima, F.; Sima, L. E.; Mihailescu, C. N.; Luculescu, C.; Iordache, I.; Socol, M.; Socol, G.; Mihailescu, I. N.

2017-10-01

Pulsed Laser Deposition (PLD) and Matrix Assisted Pulsed Laser Evaporation (MAPLE) techniques were applied for growing hydroxyapatite (HA) thin films on titanium substrates. All experiments were conducted in a reaction chamber using a KrF* excimer laser source (λ = 248 nm, τFWHM ≈ 25 ns). Half of the samples were post-deposition thermally treated at 500 °C in a flux of water vapours in order to restore crystallinity and improve adherence. Coating surface morphologies and topographies specific to the deposition method were evidenced by scanning electron, atomic force microscopy investigations and profilometry. They were shown to depend on deposition technique and also on the post-deposition treatment. Crystalline structure of the coatings evaluated by X-ray diffraction was improved after thermal treatment. Biocompatibility of coatings, cellular adhesion, proliferation and differentiation tests were conducted using human mesenchymal stem cells (MSCs). Results showed that annealed MAPLE deposited HA coatings were supporting MSCs proliferation, while annealed PLD obtained films were stimulating osteogenic differentiation.

Additive Manufacturing of Dense Hexagonal Boron Nitride Objects

Energy Technology Data Exchange (ETDEWEB)

Marquez Rossy, Andres E [ORNL; Armstrong, Beth L [ORNL; Elliott, Amy M [ORNL; Lara-Curzio, Edgar [ORNL

2017-05-12

The feasibility of manufacturing hexagonal boron nitride objects via additive manufacturing techniques was investigated. It was demonstrated that it is possible to hot-extrude thermoplastic filaments containing uniformly distributed boron nitride particles with a volume concentration as high as 60% and that these thermoplastic filaments can be used as feedstock for 3D-printing objects using a fused deposition system. Objects 3D-printed by fused deposition were subsequently sintered at high temperature to obtain dense ceramic products. In a parallel study the behavior of hexagonal boron nitride in aqueous solutions was investigated. It was shown that the addition of a cationic dispersant to an azeotrope enabled the formulation of slurries with a volume concentration of boron nitride as high as 33%. Although these slurries exhibited complex rheological behavior, the results from this study are encouraging and provide a pathway for manufacturing hexagonal boron nitride objects via robocasting.

Deposition of tantalum carbide coatings on graphite by laser interactions

Science.gov (United States)

Veligdan, James; Branch, D.; Vanier, P. E.; Barietta, R. E.

1994-01-01

Graphite surfaces can be hardened and protected from erosion by hydrogen at high temperatures by refractory metal carbide coatings, which are usually prepared by chemical vapor deposition (CVD) or chemical vapor reaction (CVR) methods. These techniques rely on heating the substrate to a temperature where a volatile metal halide decomposes and reacts with either a hydrocarbon gas or with carbon from the substrate. For CVR techniques, deposition temperatures must be in excess of 2000 C in order to achieve favorable deposition kinetics. In an effort to lower the bulk substrate deposition temperature, the use of laser interactions with both the substrate and the metal halide deposition gas has been employed. Initial testing involved the use of a CO2 laser to heat the surface of a graphite substrate and a KrF excimer laser to accomplish a photodecomposition of TaCl5 gas near the substrate. The results of preliminary experiments using these techniques are described.

Separation process for boron isotopes

Energy Technology Data Exchange (ETDEWEB)

Rockwood, S D

1975-06-12

The method according to the invention is characterized by the steps of preparing a gaseous mixture of BCl/sub 3/ containing the isotopes of boron and oxygen as the extractor, irradiating that mixture in the tube of the separator device by means of P- or R-lines of a CO/sub 2/ laser for exciting the molecules containing a given isotope of boron, simultaneously irradiating the mixture with UV for photodissociating the excited BCl/sub 3/ molecules and separating BCl/sub 3/ from the reaction products of photodissociation and from oxygen. Such method is suitable for preparing boron used in nuclear reactors.

Ultraviolet laser deposition of graphene thin films without catalytic layers

KAUST Repository

Sarath Kumar, S. R.; Alshareef, Husam N.

2013-01-01

In this letter, the formation of nanostructured graphene by ultraviolet laser ablation of a highly ordered pyrolytic graphite target under optimized conditions is demonstrated, without a catalytic layer, and a model for the growth process is proposed. Previously, graphene film deposition by low-energy laser (2.3 eV) was explained by photo-thermal models, which implied that graphene films cannot be deposited by laser energies higher than the C-C bond energy in highly ordered pyrolytic graphite (3.7 eV). Here, we show that nanostructured graphene films can in fact be deposited using ultraviolet laser (5 eV) directly over different substrates, without a catalytic layer. The formation of graphene is explained by bond-breaking assisted by photoelectronic excitation leading to formation of carbon clusters at the target and annealing out of defects at the substrate.

Ultraviolet laser deposition of graphene thin films without catalytic layers

KAUST Repository

Sarath Kumar, S. R.

2013-01-09

In this letter, the formation of nanostructured graphene by ultraviolet laser ablation of a highly ordered pyrolytic graphite target under optimized conditions is demonstrated, without a catalytic layer, and a model for the growth process is proposed. Previously, graphene film deposition by low-energy laser (2.3 eV) was explained by photo-thermal models, which implied that graphene films cannot be deposited by laser energies higher than the C-C bond energy in highly ordered pyrolytic graphite (3.7 eV). Here, we show that nanostructured graphene films can in fact be deposited using ultraviolet laser (5 eV) directly over different substrates, without a catalytic layer. The formation of graphene is explained by bond-breaking assisted by photoelectronic excitation leading to formation of carbon clusters at the target and annealing out of defects at the substrate.

ITO thin films deposited by advanced pulsed laser deposition

International Nuclear Information System (INIS)

Viespe, Cristian; Nicolae, Ionut; Sima, Cornelia; Grigoriu, Constantin; Medianu, Rares

2007-01-01

Indium tin oxide thin films were deposited by computer assisted advanced PLD method in order to obtain transparent, conductive and homogeneous films on a large area. The films were deposited on glass substrates. We studied the influence of the temperature (room temperature (RT)-180 deg. C), pressure (1-6 x 10 -2 Torr), laser fluence (1-4 J/cm 2 ) and wavelength (266-355 nm) on the film properties. The deposition rate, roughness, film structure, optical transmission, electrical conductivity measurements were done. We deposited uniform ITO thin films (thickness 100-600 nm, roughness 5-10 nm) between RT and 180 deg. C on a large area (5 x 5 cm 2 ). The films have electrical resistivity of 8 x 10 -4 Ω cm at RT, 5 x 10 -4 Ω cm at 180 deg. C and an optical transmission in the visible range, around 89%

Laser detritiation and co-deposited layer characterisation for future ITER Installation

International Nuclear Information System (INIS)

Semerok, Alexandre; Brygo, Francois; Fomichev, Sergey V.; Champonnois, Francois; Weulersse, Jean-Marc; Thro, Pierre-Yves; Fichet, Pascal; Grisolia, Christian

2006-01-01

The experimental equipment in combination with pulsed Nd-YAG lasers was developed and applied to investigate co-deposited layer characterisation and ablation. Heating and ablation regimes were distinguished by ablation threshold fluence that was determined experimentally for graphite samples from TexTor (Germany) and TORE SUPRA (France) tokamaks. With 100 ns pulses, the ablation threshold for graphite substrate (2.5±0.5 J/cm 2 ) was much higher than the one for co-deposited layer (0.4±0.1 J cm -2 ). These threshold features are very promising to ensure self-controlled laser cleaning without substrate surface damage. The obtained optimal conditions (laser fluence F=1-2 J/cm 2 , 10-20 kHz repetition rate) were applied for co-deposited layer cleaning. The TexTor 50 μm thickness layer was almost completely removed after a single scanning without any damage of the graphite substrate. Cleaning rate of 0.2 m 2 /hour was demonstrated experimentally for 20 W mean laser power. A theoretical model of a complex surface heating (graphite or metal with a co-deposited layer) was developed to explain the experimental results and to obtain laser cleaning optimisation. A good agreement of the theoretical data with the experimental results was obtained. The studies on LIBS method for co-deposited layer characterisation have determined the analytical spectral lines for hydrogen, carbon, and other impurities (B, Fe, Si, and Cu) in TexTor graphite tile. The obtained results should be regarded optimistic for co-deposited layers characterisation by LIBS method. The development of certain laser methods and their application for in-situ detritiation and co-deposited layer characterisation are presented and discussed. (authors)

25 years of pulsed laser deposition

Science.gov (United States)

Lorenz, Michael; Ramachandra Rao, M. S.

2014-01-01

It is our pleasure to introduce this special issue appearing on the occasion of the 25th anniversary of pulsed laser deposition (PLD), which is today one of the most versatile growth techniques for oxide thin films and nanostructures. Ever since its invention, PLD has revolutionized the research on advanced functional oxides due to its ability to yield high-quality thin films, multilayers and heterostructures of a variety of multi-element material systems with rather simple technical means. We appreciate that the use of lasers to deposit films via ablation (now termed PLD) has been known since the 1960s after the invention of the first ruby laser. However, in the first two decades, PLD was something of a 'sleeping beauty' with only a few publications per year, as shown below. This state of hibernation ended abruptly with the advent of high T c superconductor research when scientists needed to grow high-quality thin films of multi-component high T c oxide systems. When most of the conventional growth techniques failed, the invention of PLD by T (Venky) Venkatesan clearly demonstrated that the newly discovered high-T c superconductor, YBa2Cu3O7-δ , could be stoichiometrically deposited as a high-quality nm-thin film with PLD [1]. As a remarkable highlight of this special issue, Venkatesan gives us his very personal reminiscence on these particularly innovative years of PLD beginning in 1986 [2]. After Venky's first paper [1], the importance of this invention was realized worldwide and the number of publications on PLD increased exponentially, as shown in figure 1. Figure 1. Figure 1. Published items per year with title or topic PLD. Data from Thomson Reuters Web of Knowledge in September 2013. After publication of Venky's famous paper in 1987 [1], the story of PLD's success began with a sudden jump in the number of publications, about 25 years ago. A first PLD textbook covering its basic understanding was soon published, in 1994, by Chrisey and Hubler [3]. Within a

UV and RIR matrix assisted pulsed laser deposition of organic MEH-PPV films

International Nuclear Information System (INIS)

Toftmann, B.; Papantonakis, M.R.; Auyeung, R.C.Y.; Kim, W.; O'Malley, S.M.; Bubb, D.M.; Horwitz, J.S.; Schou, J.; Johansen, P.M.; Haglund, R.F.

2004-01-01

A comparative study of thin film production based on gentle laser-ablation techniques has been carried out with the luminescent polymer poly[2-methoxy-5-(2'-ethylhexyloxy)-1,4-phenylene vinylene]. Using a free-electron laser films were made by resonant infrared pulsed laser deposition (RIR-PLD). For the first time resonant infrared matrix assisted pulsed laser evaporation (RIR-MAPLE) was successfully demonstrated on a luminescent polymer system. In addition to this, an excimer laser has been used for UV-MAPLE depositions at 193 and 248-nm irradiation. Films deposited onto NaCl and quartz substrates were analyzed by Fourier transform infrared spectroscopy, UV-visible absorbance and photoluminescence. Photoluminescent material was deposited by RIR-MAPLE and 248-nm MAPLE, while the RIR-PLD and 193-nm-MAPLE depositions displayed the smoothest surfaces but did not show photoluminescence

UV and RIR matrix assisted pulsed laser deposition of organic MEH-PPV films

DEFF Research Database (Denmark)

Christensen, Bo Toftmann; Papantonalis, M.R.; Auyeung, R.C.Y.

2004-01-01

-PLD). For the first time resonant infrared matrix assisted pulsed laser evaporation (RIR-MAPLE) was successfully demonstrated on a luminescent polymer system. In addition to this, an excimer laser has been used for UV-MAPLE depositions at 193 and 248-nm irradiation. Films deposited onto NaCl and quartz substrates......A comparative study of thin film production based on gentle laser-ablation techniques has been carried out with the luminescent polymer poly [2-methoxy-5-(2'-ethylhexyloxy)-1,4-phenylene vinylene]. Using a free-electron laser films were made by resonant infrared pulsed laser deposition (RIR...... were analyzed by Fourier transform infrared spectroscopy, UV-visible absorbance and photoluminescence. Photoluminescent material was deposited by RIR-MAPLE and 248-nm MAPLE, while the RIR-PLD and 193-nm-MAPLE depositions displayed the smoothest surfaces but did not show photoluminescence. (C) 2003...

Fabrication of boron-phosphide neutron detectors

International Nuclear Information System (INIS)

Fitzsimmons, M.; Pynn, R.

1997-01-01

Boron phosphide is a potentially viable candidate for high neutron flux neutron detectors. The authors have explored chemical vapor deposition methods to produce such detectors and have not been able to produce good boron phosphide coatings on silicon carbide substrates. However, semi-conducting quality films have been produced. Further testing is required

Boron doped nanostructure ZnO films deposited by ultrasonic spray pyrolysis

Energy Technology Data Exchange (ETDEWEB)

Karakaya, Seniye, E-mail: seniyek@ogu.edu.tr; Ozbas, Omer

2015-02-15

Highlights: • Nanostructure undoped and boron doped ZnO films were deposited by USP technique. • Influences of doping on the surface and optical properties of the ZnO films were investigated. • XRD spectra of the films exhibited a variation in crystalline quality depending on the B content. - Abstract: ZnO is an II–VI compound semiconductor with a wide direct band gap of 3.3 eV at room temperature. Doped with group III elements (B, Al or Ga), it becomes an attractive candidate to replace tin oxide (SnO{sub 2}) or indium tin oxide (ITO) as transparent conducting electrodes in solar cell devices and flat panel display due to competitive electrical and optical properties. In this work, ZnO and boron doped ZnO (ZnO:B) films have been deposited onto glass substrates at 350 ± 5 °C by a cost-efficient ultrasonic spray pyrolysis technique. The optical, structural, morphological and electrical properties of nanostructure undoped and ZnO:B films have been investigated. Electrical resistivity of films has been analyzed by four-probe technique. Optical properties and thicknesses of the films have been examined in the wavelength range 1200–1600 nm by using spectroscopic ellipsometry (SE) measurements. The optical constants (refractive index (n) and extinction coefficient (k)) and the thicknesses of the films have been fitted according to Cauchy model. The optical method has been used to determine the band gap value of the films. Transmission spectra have been taken by UV spectrophotometer. It is found that both ZnO and ZnO:B films have high average optical transmission (≥80%). X-ray diffraction (XRD) patterns indicate that the obtained ZnO has a hexagonal wurtzite type structure. The morphological properties of the films were studied by atomic force microscopy (AFM). The surface morphology of the nanostructure films is found to depend on the concentration of B. As a result, ZnO:B films are promising contender for their potential use as transparent window layer and

Defect control in room temperature deposited cadmium sulfide thin films by pulsed laser deposition

International Nuclear Information System (INIS)

Hernandez-Como, N.; Martinez-Landeros, V.; Mejia, I.; Aguirre-Tostado, F.S.; Nascimento, C.D.; Azevedo, G. de M; Krug, C.; Quevedo-Lopez, M.A.

2014-01-01

The control of defects in cadmium sulfide thin films and its impact on the resulting CdS optical and electrical characteristics are studied. Sulfur vacancies and cadmium interstitial concentrations in the CdS films are controlled using the ambient pressure during pulsed laser deposition. CdS film resistivities ranging from 10 −1 to 10 4 Ω-cm are achieved. Hall Effect measurements show that the carrier concentration ranges from 10 19 to 10 13 cm −3 and is responsible for the observed resistivity variation. Hall mobility varies from 2 to 12 cm 2 /V-s for the same pressure regime. Although the energy bandgap remains unaffected (∼ 2.42 eV), the optical transmittance is reduced due to the increase of defects in the CdS films. Rutherford back scattering spectroscopy shows the dependence of the CdS films stoichiometry with deposition pressure. The presence of CdS defects is attributed to more energetic species reaching the substrate, inducing surface damage in the CdS films during pulsed laser deposition. - Highlights: • CdS thin films deposited by pulsed laser deposition at room temperature. • The optical, electrical and structural properties were evaluated. • Carrier concentration ranged from 10 19 to 10 13 cm −3 . • The chemical composition was studied by Rutherford back scattering. • The density of sulfur vacancies and cadmium interstitial was varied

Preparation of fiber reinforced titanium diboride and boron carbide composite bodies

International Nuclear Information System (INIS)

Newkirk, L.R.; Riley, R.E.; Sheinberg, H.; Valencia, F.A.; Wallace, T.C.

1979-01-01

A process is described for uniformly infiltrating woven carbon cloth with either titanium diboride or boron carbide at reduced pressure (15 to 25 torr). The effects of deposition temperature on the uniformity of penetration and on coating rate are described for temperatures from 750 to 1000 0 C and deposit loadings from 20 to 43 vol. %. For the boron carbides, boron composition is discussed and evidence is presented suggesting that propene is the dominant rate controlling reactant

Laser-assisted deposition of thin C60 films

DEFF Research Database (Denmark)

Schou, Jørgen; Canulescu, Stela; Fæster, Søren

Metal and metal oxide films with controlled thickness from a fraction of a monolayer up more than 1000 nm and known stoichiometry can be produced by pulsed laser deposition (PLD) relatively easily, and (PLD) is now a standard technique in all major research laboratories within materials science...... of the matrix material, anisole, with a concentration of 0.67 wt% C60. At laser fluences below 1.5 J/cm2, a dominant fraction of the film molecules are C60 transferred to the substrate without any fragmentation. High-resolution SEM images of MAPLE deposited films reveal large circular features on the surface...

Diamond coating deposition by synergy of thermal and laser methods-A problem revisited

International Nuclear Information System (INIS)

Ristic, Gordana S.; Trtica, Milan S.; Bogdanov, Zarko D.; Romcevic, Nebojsa Z.; Miljanic, Scepan S.

2007-01-01

Diamond coatings were deposited by synergy of the hot filament CVD method and the pulse TEA CO 2 laser, in spectroactive and spectroinactive diamond precursor atmospheres. Resulting diamond coatings are interpreted relying on evidence of scanning electron microscopy as well as microRaman spectroscopy. Thermal synergy component (hot filament) possesses an activating agent for diamond deposition, and contributes significantly to quality and extent of diamond deposition. Laser synergy component comprises a solid surface modification as well as the spectroactive gaseous atmosphere modification. Surface modification consists in changes of the diamond coating being deposited and, at the same time, in changes of the substrate surface structure. Laser modification of the spectroactive diamond precursor atmosphere means specific consumption of the precursor, which enables to skip the deposition on a defined substrate location. The resulting process of diamond coating elimination from certain, desired locations using the CO 2 laser might contribute to tailoring diamond coatings for particular applications. Additionally, the substrate laser modification could be optimized by choice of a proper spectroactive precursor concentration, or by a laser radiation multiple pass through an absorbing medium

Laser-deposited thin films for butane detection

Czech Academy of Sciences Publication Activity Database

Jelínek, Miroslav; Kocourek, Tomáš; Flory, F.; Escoubas, L.; Mazingue, T.; Myslík, V.; Vrňata, M.; Fryček, R.; Vysloužil, F.

2006-01-01

Roč. 16, č. 2 (2006), s. 217-222 ISSN 1054-660X R&D Projects: GA AV ČR(CZ) IAA1010110; GA ČR(CZ) GA104/03/0406 Grant - others:NANOPHOS(XE) IST-2001-39112 Institutional research plan: CEZ:AV0Z10100522 Keywords : laser deposition * gas sensor * mode spectroscopy Subject RIV: BH - Optics, Masers, Lasers Impact factor: 0.516, year: 2006

Optical and electrical properties of boron doped diamond thin conductive films deposited on fused silica glass substrates

Energy Technology Data Exchange (ETDEWEB)

Ficek, M.; Sobaszek, M.; Gnyba, M. [Department of Metrology and Optoelectronics, Gdansk University of Technology, 11/12G. Narutowicza St., 80-233 Gdansk (Poland); Ryl, J. [Department of Electrochemistry, Corrosion and Material Engineering, Gdansk University of Technology, 11/12 Narutowicza St., 80-233 Gdansk (Poland); Gołuński, Ł. [Department of Metrology and Optoelectronics, Gdansk University of Technology, 11/12G. Narutowicza St., 80-233 Gdansk (Poland); Smietana, M.; Jasiński, J. [Institute of Microelectronics and Optoelectronics, Warsaw University of Technology, 75 Koszykowa St., 00-662 Warsaw (Poland); Caban, P. [Institute of Electronic Materials Technology, 133 Wolczynska St., 01-919 Warsaw (Poland); Bogdanowicz, R., E-mail: rbogdan@eti.pg.gda.pl [Department of Metrology and Optoelectronics, Gdansk University of Technology, 11/12G. Narutowicza St., 80-233 Gdansk (Poland); Materials and Process Simulation Center, California Institute of Technology, Pasadena, CA 91125 (United States)

2016-11-30

Highlights: • Growth of 60% of transmittance diamond films with resistivity as low as 48 Ω cm. • Two step seeding process of fused silica: plasma hydrogenation and wet seeding. • Nanodiamond seeding density of 2 × 10{sup 10} cm{sup −2} at fused silica substrates. • High refractive index (2.4 @550 nm) was achieved for BDD films deposited at 500 °C. - Abstract: This paper presents boron-doped diamond (BDD) film as a conductive coating for optical and electronic purposes. Seeding and growth processes of thin diamond films on fused silica have been investigated. Growth processes of thin diamond films on fused silica were investigated at various boron doping level and methane admixture. Two step pre-treatment procedure of fused silica substrate was applied to achieve high seeding density. First, the substrates undergo the hydrogen plasma treatment then spin-coating seeding using a dispersion consisting of detonation nanodiamond in dimethyl sulfoxide with polyvinyl alcohol was applied. Such an approach results in seeding density of 2 × 10{sup 10} cm{sup −2}. The scanning electron microscopy images showed homogenous, continuous and polycrystalline surface morphology with minimal grain size of 200 nm for highly boron doped films. The sp{sup 3}/sp{sup 2} ratio was calculated using Raman spectra deconvolution method. A high refractive index (range of 2.0–2.4 @550 nm) was achieved for BDD films deposited at 500 °C. The values of extinction coefficient were below 0.1 at λ = 550 nm, indicating low absorption of the film. The fabricated BDD thin films displayed resistivity below 48 Ohm cm and transmittance over 60% in the visible wavelength range.

Comparative study on Pulsed Laser Deposition and Matrix Assisted Pulsed Laser Evaporation of urease thin films

International Nuclear Information System (INIS)

Smausz, Tomi; Megyeri, Gabor; Kekesi, Renata; Vass, Csaba; Gyoergy, Eniko; Sima, Felix; Mihailescu, Ion N.; Hopp, Bela

2009-01-01

Urease thin films were produced by Matrix Assisted Pulsed Laser Evaporation (MAPLE) and Pulsed Laser Deposition from two types of targets: frozen water solutions of urease with different concentrations (1-10% m/v) and pure urease pellets. The fluence of the ablating KrF excimer laser was varied between 300 and 2200 mJ/cm 2 . Fourier transform infrared spectra of the deposited films showed no difference as compared to the original urease. Morphologic studies proved that the films consist of a smooth 'base' layer with embedded micrometer-sized droplets. Absorption-coefficient measurements contradicted the traditional 'absorptive matrix' model for MAPLE deposition. The laser energy was absorbed by urease clusters leading to a local heating-up and evaporation of the frozen matrix from the uppermost layer accompanied by the release of dissolved urease molecules. Significant enzymatic activity of urease was preserved only during matrix assisted transfer.

Effects of boron addition on a-Si90Ge10:H films obtained by low frequency plasma enhanced chemical vapour deposition

International Nuclear Information System (INIS)

Perez, Arllene M; Renero, Francisco J; Zuniga, Carlos; Torres, Alfonso; Santiago, Cesar

2005-01-01

Optical, structural and electric properties of (a-(Si 90 Ge 10 ) 1-y B y :H) thin film alloys, deposited by low frequency plasma enhanced chemical vapour deposition, are presented. The chemical bonding structure has been studied by IR spectroscopy, while the composition was investigated by Raman spectroscopy. A discussion about boron doping effects, in the composition and bonding of samples, is presented. Transport of carriers has been studied by measurement of the conductivity dependence on temperature, which increases from 10 -3 to 10 1 Ω -1 cm -1 when the boron content varies from 0 to 50%. Similarly, the activation energy is between 0.62 and 0.19 eV when the doping increases from 0 to 83%. The optical properties have been determined from the film's optical transmission, using Swanepoel's method. It is shown that the optical gap varies from 1.3 to 0.99 eV

Defect control in room temperature deposited cadmium sulfide thin films by pulsed laser deposition

Energy Technology Data Exchange (ETDEWEB)

Hernandez-Como, N. [Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, TX, 75080 (United States); Martinez-Landeros, V. [Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, TX, 75080 (United States); Centro de Investigación en Materiales Avanzados, Monterrey, Nuevo Leon, 66600, México (Mexico); Mejia, I. [Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, TX, 75080 (United States); Aguirre-Tostado, F.S. [Centro de Investigación en Materiales Avanzados, Monterrey, Nuevo Leon, 66600, México (Mexico); Nascimento, C.D.; Azevedo, G. de M; Krug, C. [Instituto de Física, Universidade Federal do Rio Grande do Sul, Porto Alegre, 91509-900 (Brazil); Quevedo-Lopez, M.A., E-mail: mquevedo@utdallas.edu [Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, TX, 75080 (United States)

2014-01-01

The control of defects in cadmium sulfide thin films and its impact on the resulting CdS optical and electrical characteristics are studied. Sulfur vacancies and cadmium interstitial concentrations in the CdS films are controlled using the ambient pressure during pulsed laser deposition. CdS film resistivities ranging from 10{sup −1} to 10{sup 4} Ω-cm are achieved. Hall Effect measurements show that the carrier concentration ranges from 10{sup 19} to 10{sup 13} cm{sup −3} and is responsible for the observed resistivity variation. Hall mobility varies from 2 to 12 cm{sup 2}/V-s for the same pressure regime. Although the energy bandgap remains unaffected (∼ 2.42 eV), the optical transmittance is reduced due to the increase of defects in the CdS films. Rutherford back scattering spectroscopy shows the dependence of the CdS films stoichiometry with deposition pressure. The presence of CdS defects is attributed to more energetic species reaching the substrate, inducing surface damage in the CdS films during pulsed laser deposition. - Highlights: • CdS thin films deposited by pulsed laser deposition at room temperature. • The optical, electrical and structural properties were evaluated. • Carrier concentration ranged from 10{sup 19} to 10{sup 13} cm{sup −3}. • The chemical composition was studied by Rutherford back scattering. • The density of sulfur vacancies and cadmium interstitial was varied.

Spectroscopic monitoring of metallic bonding in laser metal deposition

NARCIS (Netherlands)

Ya, Wei; Konuk, A.R.; Aarts, Ronald G.K.M.; Pathiraj, B.; Huis in 't Veld, Bert

2015-01-01

A new approach is presented in this paper to link optical emission spectrum analysis to the quality of clad layers produced with laser metal deposition (LMD). A Nd:YAG laser (λ = 1.064 μm) was used to produce clad tracks with Metco 42C powder on AISI 4140 steel substrate. The laser power was ramped

Boron- and salt-tolerant trees and shrubs for northern Nevada

Science.gov (United States)

Heidi Kratsch

2012-01-01

Boron is a mineral that, in small quantities, is essential for plant growth and development , but becomes toxic at levels above 0.5 to 1 part per million (ppm) in the soil. Excess boron may be naturally present in the soil, and it can accumulate by irrigating with water high in boron. Boron occurs naturally in arid soils originating from geologically young deposits. It...

The spatial thickness distribution of metal films produced by large area pulsed laser deposition

DEFF Research Database (Denmark)

Pryds, Nini; Schou, Jørgen; Linderoth, Søren

2007-01-01

Thin films of metals have been deposited in the large-area Pulsed Laser Deposition (PLD) Facility at Riso National Laboratory. Thin films of Ag and Ni were deposited with laser pulses from an excimer laser at 248 nm with a rectangular beam spot at a fluence of 10 J/cm(2) on glass substrates of 127...

Laser ablation deposition measurements from silver and nickel

DEFF Research Database (Denmark)

Svendsen, Winnie Edith; Ellegaard, Ole; Schou, Jørgen

1996-01-01

The deposition rate for laser ablated metals has been studied in a standard geometry for fluences up to 20 J/cm(2). The rate for silver and nickel is a few percent of a monolayer per pulse at the laser wavelengths 532 nm and 355 nm. The rate for nickel is significantly higher than that for silver...... at 532 nm, whereas the rate for the two metals is similar at 355 nm. This behaviour disagrees with calculations based on the thermal properties at low intensities as well as predictions based on formation of an absorbing plasma at high intensities. The deposition rate falls strongly with increasing...

Ga–Ge–Te amorphous thin films fabricated by pulsed laser deposition

International Nuclear Information System (INIS)

Němec, P.; Nazabal, V.; Dussauze, M.; Ma, H.-L.; Bouyrie, Y.; Zhang, X.-H.

2013-01-01

UV pulsed laser deposition was employed for the fabrication of amorphous Ga–Ge–Te thin films. The local structure of the bulk glasses as well as corresponding thin films was studied using Raman scattering spectroscopy; the main structural motifs were found to be [GeTe 4 ], eventually [GaTe 4 ] corner-sharing tetrahedra and disordered Te chains. Optical functions of the films (refractive index, extinction coefficient) were characterized by variable angle spectroscopic ellipsometry. Photostability experiments showed all Ga–Ge–Te laser deposited films to be stable against 1550 nm laser irradiation in an as-deposited state. In an annealed state, the most photostable composition seems to be Ga 10 Ge 15 Te 75 . This particular composition was further studied from the point of view of thermal stability and stability against ageing in as-deposited state. - Highlights: ► Pulsed laser deposition was used for fabrication of amorphous Ga–Ge–Te thin films. ► GeTe 4 , eventually GaTe 4 tetrahedra and disordered Te chains form the film structure. ► Optical functions of Ge–Ga–Te films were characterized by spectroscopic ellipsometry. ► All as-deposited Ga–Ge–Te thin films are stable against 1550 nm irradiation. ► In annealed state, the most photostable composition seems to be Ga 10 Ge 15 Te 75

Electrophoretic deposition of hydroxyapatite-hexagonal boron nitride composite coatings on Ti substrate.

Science.gov (United States)

Göncü, Yapıncak; Geçgin, Merve; Bakan, Feray; Ay, Nuran

2017-10-01

In this study, commercial pure titanium samples were coated with nano hydroxyapatite-nano hexagonal boron nitride (nano HA-nano hBN) composite by electrophoretic deposition (EPD). The effect of process parameters (applied voltage, deposition time and solid concentration) on the coating morphology, thickness and the adhesion behavior were studied systematically and crack free nano hBN-nano HA composite coating production was achieved for developing bioactive coatings on titanium substrates for orthopedic applications. For the examination of structural and morphological characteristics of the coating surfaces, various complementary analysis methods were performed. For the structural characterization, XRD and Raman Spectroscopy were used while, Scanning Electron Microscopy (SEM) equipped with an energy dispersive spectrometer (EDS) and Transmission Electron Microscopy (TEM) techniques were carried out for revealing the morphological characterization. The results showed that nano HA-nano hBN were successfully deposited on Ti surface with uniform, crack-free coating by EPD. The amounts of hBN in suspension are considered to have no effect on coating thickness. By adding hBN into HA, the morphology of HA did not change and hBN has no significant effect on porous structure. These nanostructured surfaces are expected to be suitable for proliferation of cells and have high potential for bioactive materials. Copyright © 2017 Elsevier B.V. All rights reserved.

Effects of boron addition on a-Si(90)Ge(10):H films obtained by low frequency plasma enhanced chemical vapour deposition.

Science.gov (United States)

Pérez, Arllene M; Renero, Francisco J; Zúñiga, Carlos; Torres, Alfonso; Santiago, César

2005-06-29

Optical, structural and electric properties of (a-(Si(90)Ge(10))(1-y)B(y):H) thin film alloys, deposited by low frequency plasma enhanced chemical vapour deposition, are presented. The chemical bonding structure has been studied by IR spectroscopy, while the composition was investigated by Raman spectroscopy. A discussion about boron doping effects, in the composition and bonding of samples, is presented. Transport of carriers has been studied by measurement of the conductivity dependence on temperature, which increases from 10(-3) to 10(1) Ω(-1) cm(-1) when the boron content varies from 0 to 50%. Similarly, the activation energy is between 0.62 and 0.19 eV when the doping increases from 0 to 83%. The optical properties have been determined from the film's optical transmission, using Swanepoel's method. It is shown that the optical gap varies from 1.3 to 0.99 eV.

Exploring the deposition of oxides on silicon for photovoltaic cells by pulsed laser deposition

NARCIS (Netherlands)

Doeswijk, L.M.; de Moor, Hugo H.C.; Rogalla, Horst; Blank, David H.A.

2002-01-01

Since most commercially available solar cells are still made from silicon, we are exploring the introduction of passivating qualities in oxides, with the potential to serve as an antireflection coating. Pulsed laser deposition (PLD) was used to deposit TiO2 and SrTiO3 coatings on silicon substrates.

Spatio-selective surface modification of glass assisted by laser-induced deposition of gold nanoparticles

International Nuclear Information System (INIS)

Takahashi, Hironobu; Niidome, Yasuro; Hisanabe, Hideyuki; Kuroiwa, Keita; Kimizuka, Nobuo; Yamada, Sunao

2006-01-01

Using pulsed laser irradiation (532 nm), dodecanethiol-capped gold nanoparticles (DT-Au) were deposited on the laser-irradiated region of a hydrophobic glass substrate modified with dimethyloctadecylchlorosilane (DMOS). After removal of deposited DT-Au, the laser-deposited region on the substrate was hydrophilic, as verified by static water contact angles. X-ray photoelectron spectroscopy suggested that the naked glass surface was not exposed at the hydrophilic region. Immersion of the substrate into gold nanorod (NR) solution selectively immobilized NRs on the hydrophilic surface via electrostatic interactions, indicating that the hydrophilic region was an anionic surface. From these results, it is expected that some immobilized DMOS groups on the laser-irradiated region of the substrate were oxidized during DT-Au deposition and fragmentation of the deposited DT-Au

Characterization of boron doped nanocrystalline diamonds

International Nuclear Information System (INIS)

Peterlevitz, A C; Manne, G M; Sampaio, M A; Quispe, J C R; Pasquetto, M P; Iannini, R F; Ceragioli, H J; Baranauskas, V

2008-01-01

Nanostructured diamond doped with boron was prepared using a hot-filament assisted chemical vapour deposition system fed with an ethyl alcohol, hydrogen and argon mixture. The reduction of the diamond grains to the nanoscale was produced by secondary nucleation and defects induced by argon and boron atoms via surface reactions during chemical vapour deposition. Raman measurements show that the samples are nanodiamonds embedded in a matrix of graphite and disordered carbon grains, while morphological investigations using field electron scanning microscopy show that the size of the grains ranges from 20 to 100 nm. The lowest threshold fields achieved were in the 1.6 to 2.4 V/μm range

Study on excimer laser irradiation for controlled dehydrogenation and crystallization of boron doped hydrogenated amorphous/nanocrystalline silicon multilayers

International Nuclear Information System (INIS)

Gontad, F.; Conde, J.C.; Filonovich, S.; Cerqueira, M.F.; Alpuim, P.; Chiussi, S.

2013-01-01

We report on the excimer laser annealing (ELA) induced temperature gradients, allowing controlled crystallization and dehydrogenation of boron-doped a-Si:H/nc-Si:H multilayers. Depth of the dehydrogenation and crystallization process has been studied numerically and experimentally, showing that temperatures below the monohydride decomposition can be used and that significant changes of the doping profile can be avoided. Calculation of temperature profiles has been achieved through numerical modeling of the heat conduction differential equation. Increase in the amount of nano-crystals, but not in their size, has been demonstrated by Raman spectroscopy. Effective dehydrogenation and shape of the boron profile have been studied by time of flight secondary ion mass spectroscopy. The relatively low temperature threshold for dehydrogenation, below the monohydride decomposition temperature, has been attributed to both, the large hydrogen content of the original films and the partial crystallization during the ELA process. The results of this study show that UV-laser irradiation is an effective tool to improve crystallinity and dopant activation in p + -nc-Si:H films without damaging the substrate. - Highlights: • An efficient dehydrogenation is possible through excimer laser annealing. • 140 mJ/cm 2 is enough for dehydrogenation without significant changes in doping profile. • Fluences up to 300 mJ/cm 2 promote partial crystallization of the amorphous structures

Study on excimer laser irradiation for controlled dehydrogenation and crystallization of boron doped hydrogenated amorphous/nanocrystalline silicon multilayers

Energy Technology Data Exchange (ETDEWEB)

Gontad, F., E-mail: fran_gontad@yahoo.es [Applied Physics Department, University of Vigo, E.I. Industrial, Campus de As Lagoas, Marcosende, E-36310, Vigo (Spain); Conde, J.C. [Applied Physics Department, University of Vigo, E.I. Industrial, Campus de As Lagoas, Marcosende, E-36310, Vigo (Spain); Filonovich, S.; Cerqueira, M.F.; Alpuim, P. [Department of Physics, University of Minho, Campus de Azurém, 4800-058 Guimarães (Portugal); Chiussi, S. [Applied Physics Department, University of Vigo, E.I. Industrial, Campus de As Lagoas, Marcosende, E-36310, Vigo (Spain)

2013-06-01

We report on the excimer laser annealing (ELA) induced temperature gradients, allowing controlled crystallization and dehydrogenation of boron-doped a-Si:H/nc-Si:H multilayers. Depth of the dehydrogenation and crystallization process has been studied numerically and experimentally, showing that temperatures below the monohydride decomposition can be used and that significant changes of the doping profile can be avoided. Calculation of temperature profiles has been achieved through numerical modeling of the heat conduction differential equation. Increase in the amount of nano-crystals, but not in their size, has been demonstrated by Raman spectroscopy. Effective dehydrogenation and shape of the boron profile have been studied by time of flight secondary ion mass spectroscopy. The relatively low temperature threshold for dehydrogenation, below the monohydride decomposition temperature, has been attributed to both, the large hydrogen content of the original films and the partial crystallization during the ELA process. The results of this study show that UV-laser irradiation is an effective tool to improve crystallinity and dopant activation in p{sup +}-nc-Si:H films without damaging the substrate. - Highlights: • An efficient dehydrogenation is possible through excimer laser annealing. • 140 mJ/cm{sup 2} is enough for dehydrogenation without significant changes in doping profile. • Fluences up to 300 mJ/cm{sup 2} promote partial crystallization of the amorphous structures.

Residual stresses in laser direct metal deposited Waspaloy

Energy Technology Data Exchange (ETDEWEB)

Moat, R.J., E-mail: richard.moat@manchester.ac.uk [School of Materials, University of Manchester, Grosvenor Street, Manchester M1 7HS (United Kingdom); Pinkerton, A.J.; Li, L. [Laser Processing Research Centre, School of Mechanical, Aerospace and Civil Engineering, University of Manchester, M60 1QD (United Kingdom); Withers, P.J.; Preuss, M. [School of Materials, University of Manchester, Grosvenor Street, Manchester M1 7HS (United Kingdom)

2011-03-15

Research highlights: {yields} Neutron diffraction and the contour method show good agreement. {yields} Tensile stresses found parallel to the surfaces. {yields} Compressive stresses within the bulk of the structures. {yields} Residual stress weakly dependent on the laser pulse parameters. {yields} Maximum tensile residual stress unaffected across range of pulse parameters used. - Abstract: This paper reports a study into the effect of laser pulse length and duty cycle on the residual stress distributions in multi-track laser direct metal deposits of Waspaloy onto an Inconel 718 substrate. The residual stresses have been evaluated using neutron diffraction and the contour method, while electron microscopy and micro hardness indentation have been used to map the concomitant microstructural variation. In all cases, near the tops of the deposited walls, the longitudinal stresses are tensile towards the mid-length of the wall, while the stresses perpendicular to the substrate are negligible. By contrast near the base of the walls, the stresses along the direction of deposition are small, while the stresses perpendicular to the substrate are compressive at the centre and tensile towards the ends. Consistent with previous observations, the stresses parallel to free surfaces are tensile, balanced by compressive stresses in the interior (an inverse quench stress profile). These profiles have been found to be weakly dependent on the laser pulse parameters, most notably an increase in tensile stress gradient with increasing duty cycle, but the maximum residual stresses are largely unaffected. Furthermore, microstructural analysis has shown that the effect of laser pulse parameters on grain morphology in multi-track thick walls is less marked than previously reported for single-track wall structures.

Residual stresses in laser direct metal deposited Waspaloy

International Nuclear Information System (INIS)

Moat, R.J.; Pinkerton, A.J.; Li, L.; Withers, P.J.; Preuss, M.

2011-01-01

Research highlights: → Neutron diffraction and the contour method show good agreement. → Tensile stresses found parallel to the surfaces. → Compressive stresses within the bulk of the structures. → Residual stress weakly dependent on the laser pulse parameters. → Maximum tensile residual stress unaffected across range of pulse parameters used. - Abstract: This paper reports a study into the effect of laser pulse length and duty cycle on the residual stress distributions in multi-track laser direct metal deposits of Waspaloy onto an Inconel 718 substrate. The residual stresses have been evaluated using neutron diffraction and the contour method, while electron microscopy and micro hardness indentation have been used to map the concomitant microstructural variation. In all cases, near the tops of the deposited walls, the longitudinal stresses are tensile towards the mid-length of the wall, while the stresses perpendicular to the substrate are negligible. By contrast near the base of the walls, the stresses along the direction of deposition are small, while the stresses perpendicular to the substrate are compressive at the centre and tensile towards the ends. Consistent with previous observations, the stresses parallel to free surfaces are tensile, balanced by compressive stresses in the interior (an inverse quench stress profile). These profiles have been found to be weakly dependent on the laser pulse parameters, most notably an increase in tensile stress gradient with increasing duty cycle, but the maximum residual stresses are largely unaffected. Furthermore, microstructural analysis has shown that the effect of laser pulse parameters on grain morphology in multi-track thick walls is less marked than previously reported for single-track wall structures.

Deposition and characterization of ITO films produced by laser ablation at 355 nm

DEFF Research Database (Denmark)

Holmelund, E.; Thestrup Nielsen, Birgitte; Schou, Jørgen

2002-01-01

Indium tin oxide (ITO) films have been deposited by pulsed laser deposition (PLD) at 355 nm. Even though the absorption of laser light at the wavelength 355 nm is much smaller than that of the standard excimer lasers for PLD at 248 nm and 193 nm, high-quality films can be produced. At high fluence...

Microstructural and mechanical characterization of laser deposited advanced materials

Science.gov (United States)

Sistla, Harihar Rakshit

Additive manufacturing in the form of laser deposition is a unique way to manufacture near net shape metallic components from advanced materials. Rapid solidification facilitates the extension of solid solubility, compositional flexibility and decrease in micro-segregation in the melt among other advantages. The current work investigates the employment of laser deposition to fabricate the following: 1. Functionally gradient materials: This allows grading dissimilar materials compositionally to tailor specific properties of both these materials into a single component. Specific compositions of the candidate materials (SS 316, Inconel 625 and Ti64) were blended and deposited to study the brittle intermetallics reported in these systems. 2. High entropy alloys: These are multi- component alloys with equiatomic compositions of 5 or more elements. The ratio of Al to Ni was decreased to observe the transition of solid solution from a BCC to an FCC crystal structure in the AlFeCoCrNi system. 3. Structurally amorphous alloys: Zr-based metallic glasses have been reported to have high glass forming ability. These alloys have been laser deposited so as to rapidly cool them from the melt into an amorphous state. Microstructural analysis and X-ray diffraction were used to study the phase formation, and hardness was measured to estimate the mechanical properties.

Thermokinetic Modeling of Phase Transformation in the Laser Powder Deposition Process

Science.gov (United States)

Foroozmehr, Ehsan; Kovacevic, Radovan

2009-08-01

A finite element model coupled with a thermokinetic model is developed to predict the phase transformation of the laser deposition of AISI 4140 on a substrate with the same material. Four different deposition patterns, long-bead, short-bead, spiral-in, and spiral-out, are used to cover a similar area. Using a finite element model, the temperature history of the laser powder deposition (LPD) process is determined. The martensite transformation as well as martensite tempering is considered to calculate the final fraction of martensite, ferrite, cementite, ɛ-carbide, and retained austenite. Comparing the surface hardness topography of different patterns reveals that path planning is a critical parameter in laser surface modification. The predicted results are in a close agreement with the experimental results.

Radio-frequency oxygen-plasma-enhanced pulsed laser deposition of IGZO films

Science.gov (United States)

Chou, Chia-Man; Lai, Chih-Chang; Chang, Chih-Wei; Wen, Kai-Shin; Hsiao, Vincent K. S.

2017-07-01

We demonstrate the crystalline structures, optical transmittance, surface and cross-sectional morphologies, chemical compositions, and electrical properties of indium gallium zinc oxide (IGZO)-based thin films deposited on glass and silicon substrates through pulsed laser deposition (PLD) incorporated with radio-frequency (r.f.)-generated oxygen plasma. The plasma-enhanced pulsed laser deposition (PEPLD)-based IGZO thin films exhibited a c-axis-aligned crystalline (CAAC) structure, which was attributed to the increase in Zn-O under high oxygen vapor pressure (150 mTorr). High oxygen vapor pressure (150 mTorr) and low r.f. power (10 W) are the optimal deposition conditions for fabricating IGZO thin films with improved electrical properties.

Laser ablation and deposition of wide bandgap semiconductors: plasma and nanostructure of deposits diagnosis

Science.gov (United States)

Sanz, M.; López-Arias, M.; Rebollar, E.; de Nalda, R.; Castillejo, M.

2011-12-01

Nanostructured CdS and ZnS films on Si (100) substrates were obtained by nanosecond pulsed laser deposition at the wavelengths of 266 and 532 nm. The effect of laser irradiation wavelength on the surface structure and crystallinity of deposits was characterized, together with the composition, expansion dynamics and thermodynamic parameters of the ablation plume. Deposits were analyzed by environmental scanning electron microscopy, atomic force microscopy and X-ray diffraction, while in situ monitoring of the plume was carried out with spectral, temporal and spatial resolution by optical emission spectroscopy. The deposits consist of 25-50 nm nanoparticle assembled films but ablation in the visible results in larger aggregates (150 nm) over imposed on the film surface. The aggregate free films grown at 266 nm on heated substrates are thicker than those grown at room temperature and in the former case they reveal a crystalline structure congruent with that of the initial target material. The observed trends are discussed in reference to the light absorption step, the plasma composition and the nucleation processes occurring on the substrate.

Characterization of superconducting thin films deposited by laser ablation. Caracterisation de films minces supraconducteurs deposes par ablation laser

Energy Technology Data Exchange (ETDEWEB)

Sentis, M; Delaporte, P [I.M.F.M., 13 - Marseille (FR); Gerri, M; Marine, W [Aix-Marseille-2 Univ., 13-Marseille (FR). Centre Universitaire de Luminy

1991-05-01

Thin films of YBa{sub 2}Cu{sub 3}O{sub 7} are deposited by laser ablation on MgO and YSZ substrates. Deposits by infrared (I.R.) Nd: YAG are non stoechiometric. The films having the best superconductor qualities are deposited by ablation with an excimer U.V. laser ({lambda} = 308 nm). These films are epitaxiated with the c axis perpendicular to the substrate. The film quality depends on the substrate temperature, oxygen pressure and cooling speed.

Morphology and structural studies of WO_3 films deposited on SrTiO_3 by pulsed laser deposition

International Nuclear Information System (INIS)

Kalhori, Hossein; Porter, Stephen B.; Esmaeily, Amir Sajjad; Coey, Michael; Ranjbar, Mehdi; Salamati, Hadi

2016-01-01

Highlights: • Highly oriented WO_3 stoichiometric films were determined using pulsed laser deposition method. • Effective parameters on thin films including temperature, oxygen partial pressure and laser energy fluency was studied. • A phase transition was observed in WO_3 films at 700 °C from monoclinic to tetragonal. - Abstract: WO_3 films have been grown by pulsed laser deposition on SrTiO_3 (001) substrates. The effects of substrate temperature, oxygen partial pressure and energy fluence of the laser beam on the physical properties of the films were studied. Reflection high-energy electron diffraction (RHEED) patterns during and after growth were used to determine the surface structure and morphology. The chemical composition and crystalline phases were obtained by XPS and XRD respectively. AFM results showed that the roughness and skewness of the films depend on the substrate temperature during deposition. Optimal conditions were determined for the growth of the highly oriented films.

Wear resistance of laser-deposited boride reinforced Ti-Nb-Zr-Ta alloy composites for orthopedic implants

International Nuclear Information System (INIS)

Samuel, Sonia; Nag, Soumya; Scharf, Thomas W.; Banerjee, Rajarshi

2008-01-01

The inherently poor wear resistance of titanium alloys limits their application as femoral heads in femoral (hip) implants. Reinforcing the soft matrix of titanium alloys (including new generation β-Ti alloys) with hard ceramic precipitates such as borides offers the possibility of substantially enhancing the wear resistance of these composites. The present study discusses the microstructure and wear resistance of laser-deposited boride reinforced composites based on Ti-Nb-Zr-Ta alloys. These composites have been deposited using the LENS TM process from a blend of elemental Ti, Nb, Zr, Ta, and boron powders and consist of complex borides dispersed in a matrix of β-Ti. The wear resistance of these composites has been compared with that of Ti-6Al-4V ELI, the current material of choice for orthopedic femoral implants, against two types of counterfaces, hard Si 3 N 4 and softer SS440C stainless steel. Results suggest a substantial improvement in the wear resistance of the boride reinforced Ti-Nb-Zr-Ta alloys as compared with Ti-6Al-4V ELI against the softer counterface of SS440. The presence of an oxide layer on the surface of these alloys and composites also appears to have a substantial effect in terms of enhanced wear resistance

Pulsed laser deposition of hydroxyapatite thin films

Czech Academy of Sciences Publication Activity Database

Koch, C.F.; Johnson, S.; Kumar, D.; Jelínek, Miroslav; Chrisey, D.B.; Doraiswamy, A.; Jin, C.; Narayan, R.J.; Mihailescu, I. N.

2007-01-01

Roč. 27, - (2007), s. 484-494 ISSN 0928-4931 Institutional research plan: CEZ:AV0Z10100522 Keywords : hydroxyapatite * pulsed laser deposition * bioactive ceramic s Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.486, year: 2007

CVD mechanism of pyrolytic boron nitride

International Nuclear Information System (INIS)

Tanji, H.; Monden, K.; Ide, M.

1987-01-01

Pyrolytic boron nitride (P-BN) has become a essential material for III-V compound semiconductor manufacturing process. As the demand from electronics industry for larger single crystals increases, the demand for larger and more economical P-BN components is growing rapidly. P-BN is manufactured by low pressure CVD using boron-trihalides and ammonia as the reactants. In spite that P-BN has been in the market for quite a long time, limited number of fundamental studies regarding the kinetics and the formation mechanism of P-BN have been reported. As it has been demonstrated in CVD of Si, knowledge and both theoretical and empirical modeling of CVD process can be applied to improve the deposition technology and to give more uniform deposition with higher efficiency, and it should also apply to the deposition of P-BN

Vertically aligned carbon nanotube growth by pulsed laser deposition and thermal chemical vapor deposition methods

International Nuclear Information System (INIS)

Sohn, Jung Inn; Nam, Chunghee; Lee, Seonghoon

2002-01-01

We have grown vertically aligned carbon nanotubes on the various substrates such as a planar p-type Si(1 0 0) wafer, porous Si wafer, SiO 2 , Si 3 N 4 , Al 2 O 3 , and Cr by thermal chemical vapor deposition (CVD) at 800 deg.C, using C 2 H 2 gas as a carbon source and Fe catalyst films deposited by a pulsed laser on the substrates. The Fe films were deposited for 5 min by pulsed laser deposition (PLD). The advantage of Fe deposition by PLD over other deposition methods lies in the superior adhesion of Fe to a Si substrate due to high kinetic energies of the generated Fe species. Scanning electron microscopy (SEM) images show that vertically well-aligned carbon nanotubes are grown on Fe nanoparticles formed from the thermal annealing of the Fe film deposited by PLD on the various substrates. Atomic force microscopy (AFM) images show that the Fe film annealed at 800 deg.C is broken to Fe nanoparticles of 10-50 nm in size. We show that the appropriate density of Fe nanoparticles formed from the thermal annealing of the film deposited by PLD is crucial in growing vertically aligned carbon nanotubes. Using a PLD and a lift-off method, we developed the selective growth of carbon nanotubes on a patterned Fe-coated Si substrate

Design and spectroscopic reflectometry characterization of pulsed laser deposition combinatorial libraries

International Nuclear Information System (INIS)

Schenck, Peter K.; Bassim, Nabil D.; Otani, Makoto; Oguchi, Hiroyuki; Green, Martin L.

2007-01-01

The goal of the design of pulsed laser deposition (PLD) combinatorial library films is to optimize the compositional coverage of the films while maintaining a uniform thickness. The deposition pattern of excimer laser PLD films can be modeled with a bimodal cos n distribution. Deposited films were characterized using a spectroscopic reflectometer (250-1000 nm) to map the thickness of both single composition calibration films and combinatorial library films. These distribution functions were used to simulate the composition and thickness of multiple target combinatorial library films. The simulations were correlated with electron-probe microanalysis wavelength-dispersive spectroscopy (EPMA-WDS) composition maps. The composition and thickness of the library films can be fine-tuned by adjusting the laser spot size, fluence, background gas pressure, target geometry and other processing parameters which affect the deposition pattern. Results from compositionally graded combinatorial library films of the ternary system Al 2 O 3 -HfO 2 -Y 2 O 3 are discussed

Time-resolved diagnostics of excimer laser-generated ablation plasmas used for pulsed laser deposition

Energy Technology Data Exchange (ETDEWEB)

Geohegan, D.B.

1994-09-01

Characteristics of laser plasmas used for pulsed laser deposition (PLD) of thin films are examined with four in situ diagnostic techniques: Optical emission spectroscopy, optical absorption spectroscopy, ion probe studies, and gated ICCD (intensified charge-coupled-device array) fast photography. These four techniques are complementary and permit simultaneous views of the transport of ions, excited states, ground state neutrals and ions, and hot particulates following KrF laser ablation of YBCO, BN, graphite and Si in vacuum and background gases. The implementation and advantages of the four techniques are first described in order to introduce the key features of laser plasmas for pulsed laser deposition. Aspects of the interaction of the ablation plume with background gases (i.e., thermalization, attenuation, shock formation) and the collision of the plasma plume with the substrate heater are then summarized. The techniques of fast ICCD photography and gated photon counting are then applied to investigate the temperature, velocity, and spatial distribution of hot particles generated during KrF ablation of YBCO, BN, Si and graphite. Finally, key features of fast imaging of the laser ablation of graphite into high pressure rare gases are presented in order to elucidate internal reflected shocks within the plume, redeposition of material on a surface, and formation of hot nanoparticles within the plume.

Time-resolved diagnostics of excimer laser-generated ablation plasmas used for pulsed laser deposition

International Nuclear Information System (INIS)

Geohegan, D.B.

1994-01-01

Characteristics of laser plasmas used for pulsed laser deposition (PLD) of thin films are examined with four in situ diagnostic techniques: Optical emission spectroscopy, optical absorption spectroscopy, ion probe studies, and gated ICCD (intensified charge-coupled-device array) fast photography. These four techniques are complementary and permit simultaneous views of the transport of ions, excited states, ground state neutrals and ions, and hot particulates following KrF laser ablation of YBCO, BN, graphite and Si in vacuum and background gases. The implementation and advantages of the four techniques are first described in order to introduce the key features of laser plasmas for pulsed laser deposition. Aspects of the interaction of the ablation plume with background gases (i.e., thermalization, attenuation, shock formation) and the collision of the plasma plume with the substrate heater are then summarized. The techniques of fast ICCD photography and gated photon counting are then applied to investigate the temperature, velocity, and spatial distribution of hot particles generated during KrF ablation of YBCO, BN, Si and graphite. Finally, key features of fast imaging of the laser ablation of graphite into high pressure rare gases are presented in order to elucidate internal reflected shocks within the plume, redeposition of material on a surface, and formation of hot nanoparticles within the plume

Nanosecond laser ablation and deposition of silver, copper, zinc and tin

DEFF Research Database (Denmark)

Cazzaniga, Andrea Carlo; Ettlinger, Rebecca Bolt; Canulescu, Stela

2014-01-01

Nanosecond pulsed laser deposition of different metals (Ag, Cu, Sn, Zn) has been studied in high vacuum at a laser wavelength of 355 nm and pulse length of 6 ns. The deposition rate is roughly similar for Sn, Cu and Ag, which have comparable cohesive energies, and much higher for the deposition...... of Zn which has a low cohesive energy. The deposition rate for all metals is strongly correlated with the total ablation yield, i.e., the total mass ablated per pulse, reported in the literature except for Sn, for which the deposition rate is low, but the total ablation yield is high. This may...... be explained by the continuous erosion by nanoparticles during deposition of the Sn films which appear to have a much rougher surface than those of the other metals studied in the present work....

Boron removal from geothermal waters by electrocoagulation

Energy Technology Data Exchange (ETDEWEB)

Yilmaz, A. Erdem [Atatuerk University, Faculty of Engineering, Department of Environmental Engineering., 25240 Erzurum (Turkey)], E-mail: aerdemy@atauni.edu.tr; Boncukcuoglu, Recep [Atatuerk University, Faculty of Engineering, Department of Environmental Engineering., 25240 Erzurum (Turkey); Kocakerim, M. Muhtar [Atatuerk University, Faculty of Engineering, Department of Chemical Engineering, 25240 Erzurum (Turkey); Yilmaz, M. Tolga; Paluluoglu, Cihan [Atatuerk University, Faculty of Engineering, Department of Environmental Engineering., 25240 Erzurum (Turkey)

2008-05-01

Most of the geothermal waters in Turkey contain extremely high concentration of boron when they are used for irrigation. The use of geothermal waters for irrigation can results in excess amount deposition of boron in soil. On the other hand, a minimal boron concentration is required for irrigational waters. In this study, electrocoagulation (EC) was selected as a treatment process for the removal of boron from thermal waters obtained from Ilica-Erzurum in Turkey. Current density (CD), pH of solution and temperature of solution were selected as operational parameters. The results showed that boron removal efficiency increased from pH 4.0 to 8.0 and decreased at pH 10.0. Although boron removal efficiency was highest at pH 8.0, energy consumption was very high at this pH value compared to other pH intervals. Boron removal efficiency reached to 95% with increasing current density from 1.5 to 6.0 mA/cm{sup 2}, but energy consumption was also increased in this interval. At higher temperatures of solution, such as 313 and 333 K, boron removal efficiency increased. At optimum conditions, boron removal efficiency in geothermal water reached up to 95%.

Boron removal from geothermal waters by electrocoagulation

International Nuclear Information System (INIS)

Yilmaz, A. Erdem; Boncukcuoglu, Recep; Kocakerim, M. Muhtar; Yilmaz, M. Tolga; Paluluoglu, Cihan

2008-01-01

Most of the geothermal waters in Turkey contain extremely high concentration of boron when they are used for irrigation. The use of geothermal waters for irrigation can results in excess amount deposition of boron in soil. On the other hand, a minimal boron concentration is required for irrigational waters. In this study, electrocoagulation (EC) was selected as a treatment process for the removal of boron from thermal waters obtained from Ilica-Erzurum in Turkey. Current density (CD), pH of solution and temperature of solution were selected as operational parameters. The results showed that boron removal efficiency increased from pH 4.0 to 8.0 and decreased at pH 10.0. Although boron removal efficiency was highest at pH 8.0, energy consumption was very high at this pH value compared to other pH intervals. Boron removal efficiency reached to 95% with increasing current density from 1.5 to 6.0 mA/cm 2 , but energy consumption was also increased in this interval. At higher temperatures of solution, such as 313 and 333 K, boron removal efficiency increased. At optimum conditions, boron removal efficiency in geothermal water reached up to 95%

Fabrication of 100 A class, 1 m long coated conductor tapes by metal organic chemical vapor deposition and pulsed laser deposition

Energy Technology Data Exchange (ETDEWEB)

Selvamanickam, V.; Lee, H.G.; Li, Y.; Xiong, X.; Qiao, Y.; Reeves, J.; Xie, Y.; Knoll, A.; Lenseth, K

2003-10-15

SuperPower has been scaling up YBa{sub 2}Cu{sub 3}O{sub x}-based second-generation superconducting tapes by techniques such as pulsed laser deposition (PLD) using industrial laser and metal organic chemical vapor deposition (MOCVD). Both techniques offer advantage of high deposition rates, which is important for high throughput. Using highly-polished substrates produced in a reel-to-reel polishing facility and buffer layers deposited in a pilot ion beam assisted deposition facility, meter-long second-generation high temperature superconductor tapes have been produced. 100 A class, meter-long coated conductor tapes have been reproducibly demonstrated in this work by both MOCVD and PLD. The best results to date are 148 A over 1.06 m by MOCVD and 135 A over 1.1 m by PLD using industrial laser.

Tritium decontamination from co-deposited layer on tungsten substrate by ultra violet lamp and laser

International Nuclear Information System (INIS)

Oya, Yasuhisa; Tadokoro, Takahiro; Shu, Wataru; Hayashi, Takumi; O'hira, Shigeru; Nishi, Masataka

2001-01-01

Tritium decontamination using ultra violet (UV) lamp and laser was performed. Simulated co-deposited layer on tungsten substrate was deposited by C 2 H 2 or C 2 D 2 glow discharge. The co-deposited layer was irradiated to UV lights from a xenon excimer lamp (172 nm) or ArF excimer laser (193 nm) and the in-situ decontamination behavior was evaluated by a mass spectrometer. After the UV irradiation, the hydrogen concentration in the co-deposited layer was evaluated by elastic recoil detection analysis (ERDA) and the depth profile was analyzed by secondary ion mass spectrometry (SIMS). For the co-deposited layer formed by C 2 D 2 glow discharge, it was found that M/e 3 (HD) gas was released mainly during the UV lamp irradiation while both M/e 3 (HD) and M/e 4 (D 2 ) gases were detected during the UV laser irradiation. Though the co-deposited layer was not removed by UV lamp irradiation, almost all the co-deposited layer was removed by UV laser irradiation within 1 min. The ratio of hydrogen against carbon in the co-deposited layer was estimated to be 0.53 by ERDA and the number of photon needed for removing 1 μm thick co-deposited layer was calculated to be 3.7x10 18 cm -2 for the UV laser by SIMS measurement. It is concluded that C-H (C-D) bond on the co-deposited layer were dissociated by irradiation of UV lamp while the co-deposited layer itself was removed by the UV laser irradiation. (author)

Deposition and modification of tantalum carbide coatings on graphite by laser interactions

International Nuclear Information System (INIS)

Veligdan, J.; Branch, D.; Vanier, P.E.; Barletta, R.E.

1992-01-01

Graphite surfaces can be hardened and protected from erosion by hydrogen at high temperatures by refractory metal carbide coatings, which are usually prepared by chemical vapor deposition (CVD) or chemical vapor reaction (CVR) methods. These techniques rely on heating the substrate to a temperature where a volatile metal halide decomposes and reacts with either a hydrocarbon gas or with carbon from the substrate. For CVR techniques, deposition temperatures must be in excess of 2000 degrees C in order to achieve favorable deposition kinetics. In an effort to lower the bulk substrate deposition temperature, the use of laser interactions with both the substrate and the metal halide deposition gas has been employed. Initial testing, involved the use of a CO 2 laser to heat the surface of a graphite substrate and a KrF excimer laser to accomplish a photodecomposition of TaCl 5 gas near the substrate. Results of preliminary experiments using these techniques are described

Radio-frequency oxygen-plasma-enhanced pulsed laser deposition of IGZO films

Directory of Open Access Journals (Sweden)

Chia-Man Chou

2017-07-01

Full Text Available We demonstrate the crystalline structures, optical transmittance, surface and cross-sectional morphologies, chemical compositions, and electrical properties of indium gallium zinc oxide (IGZO-based thin films deposited on glass and silicon substrates through pulsed laser deposition (PLD incorporated with radio-frequency (r.f.-generated oxygen plasma. The plasma-enhanced pulsed laser deposition (PEPLD-based IGZO thin films exhibited a c-axis-aligned crystalline (CAAC structure, which was attributed to the increase in Zn-O under high oxygen vapor pressure (150 mTorr. High oxygen vapor pressure (150 mTorr and low r.f. power (10 W are the optimal deposition conditions for fabricating IGZO thin films with improved electrical properties.

The development of the process of electrophoresis deposition of the boron on aluminium substrate to be used in the construction of neutron detectors

International Nuclear Information System (INIS)

Oliveira Sampa, M.H. de.

1988-01-01

The development in the country of autonomous nuclear technology made it necessary to construct radiation detectors to substitute the imported ones among others the boron lined neutron detectors. For this reason was developed the process of boron electrophoresis deposition on aluminium substrate of large area for use in the construction of these neutron detectors. After the definition and optimization of the parameters involved in the process, depositions of 10 B were made on cylinders to be used after wards as electrodes in gamma compensated and non-compensated ionization chambers and in proportional detectors. Prototype of ionization were designed, builted and mounted in the department of Application for Engineering and Industry (TE) of Nuclear Energy Research Institute (IPEN) belonging to the National Atomic Energy Comission (CNEN). Submited to caracterization tests at IPEN's IEA-RL reactor, they satisfied fully the technical especifications of the project. (author) [pt

Electrochemical and morphological characterization of gold nanoparticles deposited on boron-doped diamond electrode

Energy Technology Data Exchange (ETDEWEB)

Limat, Meriadec; El Roustom, Bahaa [Ecole Polytechnique Federale de Lausanne (EPFL), Institute of Chemical Sciences and Engineering, CH-1015 Lausanne (Switzerland); Jotterand, Henri [Ecole Polytechnique Federale de Lausanne (EPFL), Institute of Physics of the Complex Matter, CH-1015 Lausanne (Switzerland); Foti, Gyoergy [Ecole Polytechnique Federale de Lausanne (EPFL), Institute of Chemical Sciences and Engineering, CH-1015 Lausanne (Switzerland)], E-mail: gyorgy.foti@epfl.ch; Comninellis, Christos [Ecole Polytechnique Federale de Lausanne (EPFL), Institute of Chemical Sciences and Engineering, CH-1015 Lausanne (Switzerland)

2009-03-30

A novel two-step method was employed to synthesize gold nanoparticles dispersed on boron-doped diamond (BDD) electrode. It consisted of sputter deposition at ambient temperature of maximum 15 equivalent monolayers of gold, followed by a heat treatment in air at 600 deg. C. Gold nanoparticles with an average diameter between 7 and 30 nm could be prepared by this method on polycrystalline BDD film electrode. The obtained Au/BDD composite electrode appeared stable under conditions of electrochemical characterization performed using ferri-/ferrocyanide and benzoquinone/hydroquinone redox couples in acidic medium. The electrochemical behavior of Au/BDD was compared to that of bulk Au and BDD electrodes. Finally, the Au/BDD composite electrode was regarded as an array of Au microelectrodes dispersed on BDD substrate.

Electrochemical and morphological characterization of gold nanoparticles deposited on boron-doped diamond electrode

International Nuclear Information System (INIS)

Limat, Meriadec; El Roustom, Bahaa; Jotterand, Henri; Foti, Gyoergy; Comninellis, Christos

2009-01-01

A novel two-step method was employed to synthesize gold nanoparticles dispersed on boron-doped diamond (BDD) electrode. It consisted of sputter deposition at ambient temperature of maximum 15 equivalent monolayers of gold, followed by a heat treatment in air at 600 deg. C. Gold nanoparticles with an average diameter between 7 and 30 nm could be prepared by this method on polycrystalline BDD film electrode. The obtained Au/BDD composite electrode appeared stable under conditions of electrochemical characterization performed using ferri-/ferrocyanide and benzoquinone/hydroquinone redox couples in acidic medium. The electrochemical behavior of Au/BDD was compared to that of bulk Au and BDD electrodes. Finally, the Au/BDD composite electrode was regarded as an array of Au microelectrodes dispersed on BDD substrate

Porous nanostructured ZnO films deposited by picosecond laser ablation

International Nuclear Information System (INIS)

Sima, Cornelia; Grigoriu, Constantin; Besleaga, Cristina; Mitran, Tudor; Ion, Lucian; Antohe, Stefan

2012-01-01

Highlights: ► We deposite porous nanostructured ZnO films by picoseconds laser ablation (PLA). ► We examine changes of the films structure on the experimental parameter deposition. ► We demonstrate PLA capability to produce ZnO nanostructured films free of particulates. - Abstract: Porous nanostructured polycrystalline ZnO films, free of large particulates, were deposited by picosecond laser ablation. Using a Zn target, zinc oxide films were deposited on indium tin oxide (ITO) substrates using a picosecond Nd:YVO 4 laser (8 ps, 50 kHz, 532 nm, 0.17 J/cm 2 ) in an oxygen atmosphere at room temperature (RT). The morpho-structural characteristics of ZnO films deposited at different oxygen pressures (150–900 mTorr) and gas flow rates (0.25 and 10 sccm) were studied. The post-deposition influence of annealing (250–550 °C) in oxygen on the film characteristics was also investigated. At RT, a mixture of Zn and ZnO formed. At substrate temperatures above 350 °C, the films were completely oxidized, containing a ZnO wurtzite phase with crystallite sizes of 12.2–40.1 nm. At pressures of up to 450 mTorr, the porous films consisted of well-distinguished primary nanoparticles with average sizes of 45–58 nm, while at higher pressures, larger clusters (3.1–14.7 μm) were dominant, leading to thicker films; higher flow rates favored clustering.

Performance characterization of Ni60-WC coating on steel processed with supersonic laser deposition

Directory of Open Access Journals (Sweden)

Fang Luo

2015-03-01

Full Text Available Ni60-WC particles are used to improve the wear resistance of hard-facing steel due to their high hardness. An emerging technology that combines laser with cold spraying to deposit the hard-facing coatings is known as supersonic laser deposition. In this study, Ni60-WC is deposited on low-carbon steel using SLD. The microstructure and performance of the coatings are investigated through SEM, optical microscopy, EDS, XRD, microhardness and pin-on-disc wear tests. The experimental results of the coating processed with the optimal parameters are compared to those of the coating deposited using laser cladding.

Application of laser assisted cold spraying process for metal deposition

CSIR Research Space (South Africa)

Tlotleng, Monnamme

2014-02-01

Full Text Available Laser assisted cold spraying (LACS) process is a hybrid technique that uses laser and cold spray to deposit solid powders on metal substrates. For bonding to occur, the particle velocities must be supersonic which are achieved by entraining...

In-situ CdS/CdTe Heterojuntions Deposited by Pulsed Laser Deposition

KAUST Repository

Avila-Avendano, Jesus

2016-04-09

In this paper pulsed laser deposition (PLD) methods are used to study p-n CdTe/CdS heterojunctions fabricated in-situ. In-situ film deposition allows higher quality p-n interfaces by minimizing spurious contamination from the atmosphere. Morphologic and structural analyses were carried for CdTe films deposited on various substrates and different deposition conditions. The electrical characteristics and performance of the resulting p-n heterojunctions were studied as function of substrate and post-deposition anneal temperature. In-situ growth results on diodes with a rectification factor of ~ 105, an ideality factor < 2, and a reverse saturation current ~ 10-8 A. The carrier concentration in the CdTe film was in the range of ~ 1015 cm-3, as measured by C-V methods. The possible impact of sulfur diffusion from the CdS into the CdTe film is also investigated using High Resolution Rutherford Back-Scattering.

In-situ CdS/CdTe Heterojuntions Deposited by Pulsed Laser Deposition

KAUST Repository

Avila-Avendano, Jesus; Mejia, Israel; Alshareef, Husam N.; Guo, Zaibing; Young, Chadwin; Quevedo-Lopez, Manuel

2016-01-01

In this paper pulsed laser deposition (PLD) methods are used to study p-n CdTe/CdS heterojunctions fabricated in-situ. In-situ film deposition allows higher quality p-n interfaces by minimizing spurious contamination from the atmosphere. Morphologic and structural analyses were carried for CdTe films deposited on various substrates and different deposition conditions. The electrical characteristics and performance of the resulting p-n heterojunctions were studied as function of substrate and post-deposition anneal temperature. In-situ growth results on diodes with a rectification factor of ~ 105, an ideality factor < 2, and a reverse saturation current ~ 10-8 A. The carrier concentration in the CdTe film was in the range of ~ 1015 cm-3, as measured by C-V methods. The possible impact of sulfur diffusion from the CdS into the CdTe film is also investigated using High Resolution Rutherford Back-Scattering.

CdS thin films prepared by laser assisted chemical bath deposition

International Nuclear Information System (INIS)

Garcia, L.V.; Mendivil, M.I.; Garcia Guillen, G.; Aguilar Martinez, J.A.; Krishnan, B.; Avellaneda, D.; Castillo, G.A.; Das Roy, T.K.; Shaji, S.

2015-01-01

Highlights: • CdS thin films by conventional CBD and laser assisted CBD. • Characterized these films using XRD, XPS, AFM, optical and electrical measurements. • Accelerated growth was observed in the laser assisted CBD process. • Improved dark conductivity and good photocurrent response for the LACBD CdS. - Abstract: In this work, we report the preparation and characterization of CdS thin films by laser assisted chemical bath deposition (LACBD). CdS thin films were prepared from a chemical bath containing cadmium chloride, triethanolamine, ammonium hydroxide and thiourea under various deposition conditions. The thin films were deposited by in situ irradiation of the bath using a continuous laser of wavelength 532 nm, varying the power density. The thin films obtained during deposition of 10, 20 and 30 min were analyzed. The changes in morphology, structure, composition, optical and electrical properties of the CdS thin films due to in situ irradiation of the bath were analyzed by atomic force microscopy (AFM), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and UV–vis spectroscopy. The thin films obtained by LACBD were nanocrystalline, photoconductive and presented interesting morphologies. The results showed that LACBD is an effective synthesis technique to obtain nanocrystalline CdS thin films having good optoelectronic properties

CdS thin films prepared by laser assisted chemical bath deposition

Energy Technology Data Exchange (ETDEWEB)

Garcia, L.V.; Mendivil, M.I.; Garcia Guillen, G.; Aguilar Martinez, J.A. [Facultad de Ingenieria Mecanica y Electrica, Universidad Autonoma de Nuevo Leon, Av. Pedro de Alba s/n, Ciudad Universitaria, San Nicolas de los Garza, Nuevo Leon 66450 (Mexico); Krishnan, B. [Facultad de Ingenieria Mecanica y Electrica, Universidad Autonoma de Nuevo Leon, Av. Pedro de Alba s/n, Ciudad Universitaria, San Nicolas de los Garza, Nuevo Leon 66450 (Mexico); CIIDIT – Universidad Autonoma de Nuevo Leon, Apodaca, Nuevo Leon (Mexico); Avellaneda, D.; Castillo, G.A.; Das Roy, T.K. [Facultad de Ingenieria Mecanica y Electrica, Universidad Autonoma de Nuevo Leon, Av. Pedro de Alba s/n, Ciudad Universitaria, San Nicolas de los Garza, Nuevo Leon 66450 (Mexico); Shaji, S., E-mail: sshajis@yahoo.com [Facultad de Ingenieria Mecanica y Electrica, Universidad Autonoma de Nuevo Leon, Av. Pedro de Alba s/n, Ciudad Universitaria, San Nicolas de los Garza, Nuevo Leon 66450 (Mexico); CIIDIT – Universidad Autonoma de Nuevo Leon, Apodaca, Nuevo Leon (Mexico)

2015-05-01

Highlights: • CdS thin films by conventional CBD and laser assisted CBD. • Characterized these films using XRD, XPS, AFM, optical and electrical measurements. • Accelerated growth was observed in the laser assisted CBD process. • Improved dark conductivity and good photocurrent response for the LACBD CdS. - Abstract: In this work, we report the preparation and characterization of CdS thin films by laser assisted chemical bath deposition (LACBD). CdS thin films were prepared from a chemical bath containing cadmium chloride, triethanolamine, ammonium hydroxide and thiourea under various deposition conditions. The thin films were deposited by in situ irradiation of the bath using a continuous laser of wavelength 532 nm, varying the power density. The thin films obtained during deposition of 10, 20 and 30 min were analyzed. The changes in morphology, structure, composition, optical and electrical properties of the CdS thin films due to in situ irradiation of the bath were analyzed by atomic force microscopy (AFM), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and UV–vis spectroscopy. The thin films obtained by LACBD were nanocrystalline, photoconductive and presented interesting morphologies. The results showed that LACBD is an effective synthesis technique to obtain nanocrystalline CdS thin films having good optoelectronic properties.

RHEED study of titanium dioxide with pulsed laser deposition

DEFF Research Database (Denmark)

Rasmussen, Inge Lise; Pryds, Nini; Schou, Jørgen

2009-01-01

Reflection high-energy electron diffraction (RHEED) operated at high pressure has been used to monitor the growth of thin films of titanium dioxide (TiO2) on (1 0 0) magnesium oxide (MgO) substrates by pulsed laser deposition (PLD). The deposition is performed with a synthetic rutile TiO2 target...

Numerical study on increasing mass flow ratio by energy deposition of high frequency pulsed laser

International Nuclear Information System (INIS)

Wang Diankai; Hong Yanji; Li Qian

2013-01-01

The mass flow ratio (MFR) of air breathing ramjet inlet would be decreased, when the Mach number is lower than the designed value. High frequency pulsed laser energy was deposited upstream of the cowl lip to reflect the stream so as to increase the MFR. When the Mach number of the flow was 5.0, and the static pressure and temperature of the flow were 2 551.6 Pa and 116.7 K, respectively, two-dimensional non-stationary compressible RANS equations were solved with upwind format to study the mechanisms of increasing MFR by high frequency pulsed laser energy deposition. The laser deposition frequency was 100 kHz and the average power was 500 W. The crossing point of the first forebody oblique shock and extension line of cowl lip was selected as the expected point. Then the deposition position was optimized by searching near the expected point. The results indicate that with the optimization of laser energy deposition position, the MFR would be increased from 63% to 97%. The potential value of increasing MFR by high frequency pulsed laser energy deposition was proved. The method for selection of the energy deposition position was also presented. (authors)

Study of titania nanorod films deposited by matrix-assisted pulsed laser evaporation as a function of laser fluence

Science.gov (United States)

Caricato, A. P.; Belviso, M. R.; Catalano, M.; Cesaria, M.; Cozzoli, P. D.; Luches, A.; Manera, M. G.; Martino, M.; Rella, R.; Taurino, A.

2011-11-01

Chemically synthesized brookite titanium dioxide (TiO2) nanorods with average diameter and length dimensions of 3-4 nm and 35-50 nm, respectively, were deposited by the matrix-assisted pulsed laser evaporation technique. A toluene nanorod solution was frozen at the liquid-nitrogen temperature and irradiated with a KrF excimer laser ( λ=248 nm, τ=20 ns) at the repetition rate of 10 Hz, at different fluences (25 to 350 mJ/cm2). The deposited films were structurally characterized by high-resolution scanning and transmission electron microscopy. single-crystal Si wafers and carbon-coated Cu grids were used as substrates. Structural analyses evidenced the occurrence of brookite-phase crystalline nanospheres coexisting with individually distinguishable TiO2 nanorods in the films deposited at fluences varying from 50 to 350 mJ/cm2. Nanostructured TiO2 films comprising only nanorods were deposited by lowering the laser fluence to 25 mJ/cm2. The observed shape and phase transitions of the nanorods are discussed taking into account the laser-induced heating effects, reduced melting temperature and size-dependent thermodynamic stability of nanoscale TiO2.

Antimony sulfide thin films prepared by laser assisted chemical bath deposition

International Nuclear Information System (INIS)

Shaji, S.; Garcia, L.V.; Loredo, S.L.; Krishnan, B.

2017-01-01

Highlights: • Antimony sulfide thin films were prepared by normal CBD and laser assisted CBD. • Characterized these films using XRD, XPS, AFM, optical and electrical measurements. • Accelerated growth was observed in the laser assisted CBD process. • These films were photoconductive. - Abstract: Antimony sulfide (Sb_2S_3) thin films were prepared by laser assisted chemical bath deposition (LACBD) technique. These thin films were deposited on glass substrates from a chemical bath containing antimony chloride, acetone and sodium thiosulfate under various conditions of normal chemical bath deposition (CBD) as well as in-situ irradiation of the chemical bath using a continuous laser of 532 nm wavelength. Structure, composition, morphology, optical and electrical properties of the Sb_2S_3 thin films produced by normal CBD and LACBD were analyzed by X-Ray diffraction (XRD), Raman Spectroscopy, Atomic force microscopy (AFM), X-Ray photoelectron spectroscopy (XPS), UV–vis spectroscopy and Photoconductivity. The results showed that LACBD is an effective synthesis technique to obtain Sb_2S_3 thin films for optoelectronic applications.

Antimony sulfide thin films prepared by laser assisted chemical bath deposition

Energy Technology Data Exchange (ETDEWEB)

Shaji, S., E-mail: sshajis@yahoo.com [Facultad de Ingeniería Mecánica y Eléctrica, Universidad Autónoma de Nuevo León, Av. Pedro de Alba s/n, Ciudad Universitaria, San Nicolás de los Garza, Nuevo León, 66455 (Mexico); CIIDIT—Universidad Autónoma de Nuevo León, Apodaca, Nuevo León (Mexico); Garcia, L.V. [Facultad de Ingeniería Mecánica y Eléctrica, Universidad Autónoma de Nuevo León, Av. Pedro de Alba s/n, Ciudad Universitaria, San Nicolás de los Garza, Nuevo León, 66455 (Mexico); Loredo, S.L. [Centro de Investigación en Materiales Avanzados (CIMAV), Unidad Monterrey, PIIT, Apodaca, Nuevo León (Mexico); Krishnan, B. [Facultad de Ingeniería Mecánica y Eléctrica, Universidad Autónoma de Nuevo León, Av. Pedro de Alba s/n, Ciudad Universitaria, San Nicolás de los Garza, Nuevo León, 66455 (Mexico); CIIDIT—Universidad Autónoma de Nuevo León, Apodaca, Nuevo León (Mexico); and others

2017-01-30

Highlights: • Antimony sulfide thin films were prepared by normal CBD and laser assisted CBD. • Characterized these films using XRD, XPS, AFM, optical and electrical measurements. • Accelerated growth was observed in the laser assisted CBD process. • These films were photoconductive. - Abstract: Antimony sulfide (Sb{sub 2}S{sub 3}) thin films were prepared by laser assisted chemical bath deposition (LACBD) technique. These thin films were deposited on glass substrates from a chemical bath containing antimony chloride, acetone and sodium thiosulfate under various conditions of normal chemical bath deposition (CBD) as well as in-situ irradiation of the chemical bath using a continuous laser of 532 nm wavelength. Structure, composition, morphology, optical and electrical properties of the Sb{sub 2}S{sub 3} thin films produced by normal CBD and LACBD were analyzed by X-Ray diffraction (XRD), Raman Spectroscopy, Atomic force microscopy (AFM), X-Ray photoelectron spectroscopy (XPS), UV–vis spectroscopy and Photoconductivity. The results showed that LACBD is an effective synthesis technique to obtain Sb{sub 2}S{sub 3} thin films for optoelectronic applications.

Microdroplet deposition through a film-free laser forward printing technique

International Nuclear Information System (INIS)

Patrascioiu, A.; Fernández-Pradas, J.M.; Morenza, J.L.; Serra, P.

2012-01-01

Highlights: ► Circular droplets are obtained for a wide range of focusing depths at fixed energy. ► Focusing depth variation study reveals two abrupt transitions in droplet diameter. ► Liquid ejection mechanism is mediated by two types of jets of different origin. ► Evolution of jets depends on the focusing depth accounting for the seen transitions. - Abstract: A recently developed film-free laser forward microprinting technique allows printing transparent and weakly absorbing liquids with high resolution and reproducibility. Its operating principle consists in the tight focusing of ultrashort laser pulses inside the liquid, and near its free surface, such that all the laser energy is absorbed in a small region around the beam waist. A cavitation bubble is then created inside the liquid, whose subsequent expansion results into the ejection of liquid. The collection of the ejected liquid on a substrate leads to the deposition of micron-sized droplets. In this work, we investigate a relevant process parameter of the technique, namely the laser focusing depth, and its influence on the morphology of the deposited droplets. The study reveals that for a fixed laser pulse energy there exists a relatively wide range of focusing depths at which circular and uniform droplets can be printed. The process of liquid ejection is also investigated. Time-resolved images reveal that liquid ejection proceeds through the formation of two kinds of jets which display clearly differentiated dynamics, and which could provide an interpretation for the dependence observed between the morphology of the deposited droplets and the laser focusing depth.

Laser Direct Metal Deposition of 2024 Al Alloy: Trace Geometry Prediction via Machine Learning

Directory of Open Access Journals (Sweden)

Fabrizia Caiazzo

2018-03-01

Full Text Available Laser direct metal deposition is an advanced additive manufacturing technology suitably applicable in maintenance, repair, and overhaul of high-cost products, allowing for minimal distortion of the workpiece, reduced heat affected zones, and superior surface quality. Special interest is growing for the repair and coating of 2024 aluminum alloy parts, extensively utilized for a wide range of applications in the automotive, military, and aerospace sectors due to its excellent plasticity, corrosion resistance, electric conductivity, and strength-to-weight ratio. A critical issue in the laser direct metal deposition process is related to the geometrical parameters of the cross-section of the deposited metal trace that should be controlled to meet the part specifications. In this research, a machine learning approach based on artificial neural networks is developed to find the correlation between the laser metal deposition process parameters and the output geometrical parameters of the deposited metal trace produced by laser direct metal deposition on 5-mm-thick 2024 aluminum alloy plates. The results show that the neural network-based machine learning paradigm is able to accurately estimate the appropriate process parameters required to obtain a specified geometry for the deposited metal trace.

Laser Direct Metal Deposition of 2024 Al Alloy: Trace Geometry Prediction via Machine Learning.

Science.gov (United States)

Caiazzo, Fabrizia; Caggiano, Alessandra

2018-03-19

Laser direct metal deposition is an advanced additive manufacturing technology suitably applicable in maintenance, repair, and overhaul of high-cost products, allowing for minimal distortion of the workpiece, reduced heat affected zones, and superior surface quality. Special interest is growing for the repair and coating of 2024 aluminum alloy parts, extensively utilized for a wide range of applications in the automotive, military, and aerospace sectors due to its excellent plasticity, corrosion resistance, electric conductivity, and strength-to-weight ratio. A critical issue in the laser direct metal deposition process is related to the geometrical parameters of the cross-section of the deposited metal trace that should be controlled to meet the part specifications. In this research, a machine learning approach based on artificial neural networks is developed to find the correlation between the laser metal deposition process parameters and the output geometrical parameters of the deposited metal trace produced by laser direct metal deposition on 5-mm-thick 2024 aluminum alloy plates. The results show that the neural network-based machine learning paradigm is able to accurately estimate the appropriate process parameters required to obtain a specified geometry for the deposited metal trace.

Influence of boron concentration on growth characteristic and electro-catalytic performance of boron-doped diamond electrodes prepared by direct current plasma chemical vapor deposition

International Nuclear Information System (INIS)

Feng Yujie; Lv Jiangwei; Liu Junfeng; Gao Na; Peng Hongyan; Chen Yuqiang

2011-01-01

A series of boron-doped diamond (BDD) electrodes were prepared by direct current plasma chemical vapor deposition (DC-PCVD) with different compositions of CH 4 /H 2 /B(OCH 3 ) 3 gas mixture. A maximum growth rate of 0.65 mg cm -2 h -1 was obtained with CH 4 /H 2 /B(OCH 3 ) 3 radio of 4/190/10 and this growth condition was also a turning point for discharge plasma stability which arose from the addition of B(OCH 3 ) 3 that changed electron energy distribution and influenced the plasma reaction. The surface coating structure and electro-catalytic performance of the BDD electrodes were characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD), Raman spectroscopy, Hall test, and electrochemical measurement and electro-catalytic oxidation in phenol solution. It is suggested that the boron doping level and the thermal stress in the films are the main factors affecting the electro-catalytic characteristics of the electrodes. Low boron doping level with CH 4 /H 2 /B(OCH 3 ) 3 ratio of 4/199/1 decreased the films electrical conductivity and its electro-catalytic activity. When the carrier concentration in the films reached around 10 20 cm -3 with CH 4 /H 2 /B(OCH 3 ) 3 ratio over a range of 4/195/5-4/185/15, the thermal stress in the films was the key reason that influenced the electro-catalytic activity of the electrodes for its effect on diamond lattice expansion. Therefore, the BDD electrode with modest CH 4 /H 2 /B(OCH 3 ) 3 ratio of 4/190/10 possessed the best phenol removal efficiency.

Characterization of hydroxyapatite coating by pulse laser deposition technique on stainless steel 316 L by varying laser energy

International Nuclear Information System (INIS)

Khandelwal, Himanshu; Singh, Gurbhinder; Agrawal, Khelendra; Prakash, Satya; Agarwal, R.D.

2013-01-01

Highlights: ► Hydroxyapatite coating was successfully deposited on stainless steel substrate by pulse laser deposition at different energy levels (i.e. 300 mJ and 500 mJ, respectively). ► Variation in laser energy affects the surface characteristic of hydroxyapatite coating (particle size, surface roughness, uniformity, Ca/P ratio). ► Laser energy between 300 mJ and 500 mJ is the optimal choice for obtaining ideal Ca/P ratio. - Abstract: Hydroxyapatite is an attractive biomaterial mainly used in bone and tooth implants because it closely resembles human tooth and bone mineral and has proven to be biologically compatible with these tissues. In spite of this advantage of hydroxyapatite it has also certain limitation like inferior mechanical properties which do not make it suitable for long term load bearing applications; hence a lot of research is going on in the development of hydroxyapatite coating over various metallic implants. These metallic implants have good biocompatibility and mechanical properties. The aim of the present work is to deposit hydroxyapatite coating over stainless steel grade 316 L by pulse laser deposition technique by varying laser energy. To know the effect of this variation, the coatings were than characterized in detail by X-ray diffraction, finite emission-scanning electron microscope, atomic force microscope and energy dispersive X-ray spectroscopy.

Studies of the Influence of Beam Profile and Cooling Conditions on the Laser Deposition of a Directionally-Solidified Superalloy

Directory of Open Access Journals (Sweden)

Shuo Yang

2018-02-01

Full Text Available In the laser deposition of single crystal and directionally-solidified superalloys, it is desired to form laser deposits with high volume fractions of columnar grains by suppressing the columnar-to-equiaxed transition efficiently. In this paper, the influence of beam profile (circular and square shapes and cooling conditions (natural cooling and forced cooling on the geometric morphology and microstructure of deposits were experimentally studied in the laser deposition of a directionally-solidified superalloy, IC10, and the mechanisms of influence were revealed through a numerical simulation of the thermal processes during laser deposition. The results show that wider and thinner deposits were obtained with the square laser beam than those with the circular laser beam, regardless of whether natural or forced cooling conditions was used. The heights and contact angles of deposits were notably increased due to the reduced substrate temperatures by the application of forced cooling for both laser beam profiles. Under natural cooling conditions, columnar grains formed epitaxially at both the center and the edges of the deposits with the square laser beam, but only at the center of the deposits with the circular laser beam; under forced cooling conditions, columnar grains formed at both the center and the edges of deposits regardless of the laser beam profile. The high ratios of thermal gradient and solidification velocity in the height direction of the deposits were favorable to forming deposits with higher volume fractions of columnar grains.

Impact of laser power density on tribological properties of Pulsed Laser Deposited DLC films

Science.gov (United States)

Gayathri, S.; Kumar, N.; Krishnan, R.; AmirthaPandian, S.; Ravindran, T. R.; Dash, S.; Tyagi, A. K.; Sridharan, M.

2013-12-01

Fabrication of wear resistant and low friction carbon films on the engineered substrates is considered as a challenging task for expanding the applications of diamond-like carbon (DLC) films. In this paper, pulsed laser deposition (PLD) technique is used to deposit DLC films on two different types of technologically important class of substrates such as silicon and AISI 304 stainless steel. Laser power density is one of the important parameter used to tailor the fraction of sp2 bonded amorphous carbon (a-C) and tetrahedral amorphous carbon (ta-C) made by sp3 domain in the DLC film. The I(D)/I(G) ratio decreases with the increasing laser power density which is associated with decrease in fraction of a-C/ta-C ratio. The fraction of these chemical components is quantitatively analyzed by EELS which is well supported to the data obtained from the Raman spectroscopy. Tribological properties of the DLC are associated with chemical structure of the film. However, the super low value of friction coefficient 0.003 is obtained when the film is predominantly constituted by a-C and sp2 fraction which is embedded within the clusters of ta-C. Such a particular film with super low friction coefficient is measured while it was deposited on steel at low laser power density of 2 GW/cm2. The super low friction mechanism is explained by low sliding resistance of a-C/sp2 and ta-C clusters. Combination of excellent physical and mechanical properties of wear resistance and super low friction coefficient of DLC films is desirable for engineering applications. Moreover, the high friction coefficient of DLC films deposited at 9GW/cm2 is related to widening of the intergrain distance caused by transformation from sp2 to sp3 hybridized structure.

Powder Flux Regulation in the Laser Material Deposition Process

Science.gov (United States)

Arrizubieta, Jon Iñaki; Wegener, Maximiliam; Arntz, Kristian; Lamikiz, Aitzol; Ruiz, Jose Exequiel

In the present research work a powder flux regulation system has been designed, developed and validated with the aim of improving the Laser Material Deposition (LMD) process. In this process, the amount of deposited material per substrate surface unit area depends on the real feed rate of the nozzle. Therefore, a regulation system based on a solenoid valve has been installed at the nozzle entrance in order to control the powder flux. The powder flux control has been performed based on the machine real feed rate, which is compared with the programmed feed rate. An instantaneous velocity error is calculated and the powder flow is controlled as a function of this variation using Pulse Width Modulation (PWM) signals. Thereby, in zones where the Laser Material Deposition machine reduces the feed rate due to a trajectory change, powder accumulation can be avoided and the generated clads would present a homogeneous shape.

Laser-induced ion emission during polymer deposition from a flash-frozen water ice matrix

DEFF Research Database (Denmark)

Rodrigo, K.; Toftmann, Bo; Schou, Jørgen

2004-01-01

Flash-frozen water solutions of 1% weight PEG (polyethylene glycol) at -50 degreesC were used as targets at a laser wavelength of 355 nm for polymer deposition with Matrix-Assisted Pulsed Laser Evaporation (MAPLE). For medium laser fluences the transfer of PEG material to the substrate was accomp......Flash-frozen water solutions of 1% weight PEG (polyethylene glycol) at -50 degreesC were used as targets at a laser wavelength of 355 nm for polymer deposition with Matrix-Assisted Pulsed Laser Evaporation (MAPLE). For medium laser fluences the transfer of PEG material to the substrate...

Applications of interface controlled pulsed-laser deposited polymer films in field-effect transistors

Science.gov (United States)

Adil, Danish; Ukah, Ndubuisi; Guha, Suchi; Gupta, Ram; Ghosh, Kartik

2010-03-01

Matrix assisted pulsed laser evaporation, a derivative of pulsed laser deposition (PLD), is an alternative method of depositing polymer and biomaterial films that allows homogeneous film coverage of high molecular weight organic materials for layer-by-layer growth without any laser induced damage. Polyfluorene (PF)-based conjugated polymers have attracted considerable attention in organic field-effect transistors (FETs). A co-polymer of PF (PFB) was deposited as a thin film using matrix assisted PLD employing a KrF excimer laser. Electrical characteristics of FETs fabricated using these PLD grown films were compared to those of FETs using spin-coated films. We show that threshold voltages, on/off ratios, and charge carrier motilities are significantly improved in PLD grown films. This is attributed to an improved dielectric-polymer interface.

Alternative Process for Manufacturing of Thin Layers of Boron for Neutron Measurement

Energy Technology Data Exchange (ETDEWEB)

Auge, Gregoire; Partyka, Stanislas [Onet Technologies (France); Guerard, Bruno; Buffet, Jean-Claude [Institut Laue Langevin - ILL, Grenoble (France)

2015-07-01

Due to the worldwide shortage of helium 3, Boron-lined proportional counters are developed intensively by several groups. Up to now, thin boron containing layers for neutron detectors are essentially produced by sputtering of boron carbide (B{sub 4}C). This technology provides high quality films but it is slow and expensive. Our paper describes a novel and inexpensive technology for producing boron layers. This technology is based on chemical synthesis of boron 10 nanoparticles, and on electrophoretic deposition of these particles on metallic plates, or on metallic pieces with more complex shapes. The chemical synthesis consists in: - Heating boron 10 with lithium up to 700 deg. C under inert atmosphere: an intermetallic compound, LiB, is produced; - Hydrolysing this intermetallic compound: LiB + H{sub 2}O → B + Li{sup +} + OH{sup -} + 1/2H{sub 2}, where B is under the form of nanoparticles; - Purifying the suspension of boron nanoparticles in water, from lithium hydroxide, by successive membrane filtrations; - Evaporating the purified suspension, in order to get a powder of nanoparticles. The obtained nanoparticles have size around 300 nm, with a high porosity, of about 50%. This particle size is equivalent to about 150 nm massive particles. The nanoparticles are then put into suspension in a specific solvent, in order to perform deposition on metallic surfaces, by electrophoretic method. The solvent is chosen so that it is not electrolysed even under voltages of several tens of volts. An acid is dissolved into the solvent, so that the nanoparticles are positively charged. Deposition is performed on the cathode within about 10 min. The cathode could be an aluminium plate, or a nickel coated aluminium plate. Homogeneous deposition may also be performed on complex shapes, like grids in a Multigrid detector. A large volume of pieces, can be coated with a Boron-10 film in a few hours. The thickness of the layer can be adjusted according to the required neutron

Enhancement of surface integrity of titanium alloy with copper by means of laser metal deposition process

CSIR Research Space (South Africa)

Erinosho, MF

2016-04-01

Full Text Available The laser metal deposition process possesses the combination of metallic powder and laser beam respectively. However, these combinations create an adhesive bonding that permanently solidifies the laser-enhanced-deposited powders. Titanium alloys (Ti...

Boron-doped zinc oxide thin films for large-area solar cells grown by metal organic chemical vapor deposition

International Nuclear Information System (INIS)

Chen, X.L.; Xu, B.H.; Xue, J.M.; Zhao, Y.; Wei, C.C.; Sun, J.; Wang, Y.; Zhang, X.D.; Geng, X.H.

2007-01-01

Boron-doped zinc oxide (ZnO:B) films were grown by metal organic chemical vapor deposition using diethylzinc (DEZn), and H 2 O as reactant gases and diborane (B 2 H 6 ) as an n-type dopant gas. The structural, electrical and optical properties of ZnO films doped at different B 2 H 6 flow rates were investigated. X-ray diffraction spectra and scanning electron microscopy images indicate that boron-doping plays an important role on the microstructure of ZnO films, which induced textured morphology. With optimized conditions, low sheet resistance (∼ 30 Ω/□), high transparency (> 85% in the visible light and infrared range) and high mobility (17.8 cm 2 V -1 s -1 ) were obtained for 700-nm ZnO:B films deposited on 20 cm x 20 cm glass substrates at the temperature of 443 K. After long-term exposure in air, the ZnO:B films also showed a better electrical stability than the un-doped samples. With the application of ZnO:B/Al back contacts, the short circuit current density was effectively enhanced by about 3 mA/cm 2 for a small area a-Si:H cell and a high efficiency of 9.1% was obtained for a large-area (20 cm x 20 cm) a-Si solar module

Structural strengthening of rocket nozzle extension by means of laser metal deposition

Science.gov (United States)

Honoré, M.; Brox, L.; Hallberg, M.

2012-03-01

Commercial space operations strive to maximize the payload per launch in order to minimize the costs of each kg launched into orbit; this yields demand for ever larger launchers with larger, more powerful rocket engines. Volvo Aero Corporation in collaboration with Snecma and Astrium has designed and tested a new, upgraded Nozzle extension for the Vulcain 2 engine configuration, denoted Vulcain 2+ NE Demonstrator The manufacturing process for the welding of the sandwich wall and the stiffening structure is developed in close cooperation with FORCE Technology. The upgrade is intended to be available for future development programs for the European Space Agency's (ESA) highly successful commercial launch vehicle, the ARIANE 5. The Vulcain 2+ Nozzle Extension Demonstrator [1] features a novel, thin-sheet laser-welded configuration, with laser metal deposition built-up 3D-features for the mounting of stiffening structure, flanges and for structural strengthening, in order to cope with the extreme load- and thermal conditions, to which the rocket nozzle extension is exposed during launch of the 750 ton ARIANE 5 launcher. Several millimeters of material thickness has been deposited by laser metal deposition without disturbing the intricate flow geometry of the nozzle cooling channels. The laser metal deposition process has been applied on a full-scale rocket nozzle demonstrator, and in excess of 15 kilometers of filler wire has been successfully applied to the rocket nozzle. The laser metal deposition has proven successful in two full-throttle, full-scale tests, firing the rocket engine and nozzle in the ESA test facility P5 by DLR in Lampoldshausen, Germany.

Pulsed laser deposition and characterization of cellulase thin films

Science.gov (United States)

Cicco, N.; Morone, A.; Verrastro, M.; Viggiano, V.

2013-08-01

Thin films of cellulase were obtained by pulsed laser deposition (PLD) on an appropriate substrate. Glycoside hydrolase cellulase has received our attention because it emerges among the antifouling enzymes (enzymes being able to remove and prevent the formation of micro-organism biofilms) used in industry and medicine field. Pressed cellulase pellets, used as target material, were ablated with pulses of a Nd-YAG laser working at wavelength of 532 nm. In this work, we evaluated the impact of PLD technique both on molecular structure and hydrolytic activity of cellulase. Characteristic chemical bonds and morphology of deposited layers were investigated by FTIR spectroscopy and SEM respectively. The hydrolytic activity of cellulase thin films was detected by a colorimetric assay.

New results in pulsed laser deposition of poly-methyl-methacrylate thin films

International Nuclear Information System (INIS)

Cristescu, R.; Socol, G.; Mihailescu, I.N.; Popescu, M.; Sava, F.; Ion, E.; Morosanu, C.O.; Stamatin, I.

2003-01-01

Thin organic films based on poly-methyl-methacrylate (PMMA) polymer have been obtained by pulsed laser deposition (PLD) on silicon substrates. The films were characterized by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM) and Raman spectroscopy (RS). We observed that the film composition and structure depend on the laser fluence and on the temperature of the substrate during deposition

Deposition and characterization of aluminum magnesium boride thin film coatings

Science.gov (United States)

Tian, Yun

Boron-rich borides are a special group of materials possessing complex structures typically comprised of B12 icosahedra. All of the boron-rich borides sharing this common structural unit exhibit a variety of exceptional physical and electrical properties. In this work, a new ternary boride compound AlMgB14, which has been extensively studied in bulk form due to its novel mechanical properties, was fabricated into thin film coatings by pulsed laser deposition (PLD) technology. The effect of processing conditions (laser operating modes, vacuum level, substrate temperature, and postannealing, etc.) on the composition, microstructure evolution, chemical bonding, and surface morphology of AlMgB14 thin film coatings has been investigated by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), transmission electron microscopy (TEM), atomic force microscopy (AFM) and Fourier transform infrared (FTIR) spectrometry; the mechanical, electrical, and optical properties of AlMgB14 thin films have been characterized by nanoindentation, four-point probe, van der Pauw Hall measurement, activation energy measurement, and UV-VIS-NIR spectrophotometer. Experimental results show that AlMgB14 films deposited in the temperature range of 300 K - 873 K are amorphous. Depositions under a low vacuum level (5 x 10-5 Torr) can introduce a significant amount of C and O impurities into AlMgB14 films and lead to a complex oxide glass structure. Orthorhombic AlMgB14 phase cannot be obtained by subsequent high temperature annealing. By contrast, the orthorhombic AlMgB 14 crystal structure can be attained via high temperature-annealing of AlMgB14 films deposited under a high vacuum level (boride films, high vacuum level-as deposited AlMgB14 films also possess a low n-type electrical resistivity, which is a consequence of high carrier concentration and moderate carrier mobility. The operative electrical transport mechanism and doping behavior for high vacuum level-as deposited AlMgB14

Pulsed laser deposition to synthesize the bridge structure of artificial nacre: Comparison of nano- and femtosecond lasers

Science.gov (United States)

Melaibari, Ammar A.; Molian, Pal

2012-11-01

Nature offers inspiration to new adaptive technologies that allow us to build amazing shapes and structures such as nacre using synthetic materials. Consequently, we have designed a pulsed laser ablation manufacturing process involving thin film deposition and micro-machining to create hard/soft layered "brick-bridge-mortar" nacre of AlMgB14 (hard phase) with Ti (soft phase). In this paper, we report pulsed laser deposition (PLD) to mimic brick and bridge structures of natural nacre in AlMgB14. Particulate formation inherent in PLD is exploited to develop the bridge structure. Mechanical behavior analysis of the AlMgB14/Ti system revealed that the brick is to be 250 nm thick, 9 μm lateral dimensions while the bridge (particle) is to have a diameter of 500 nm for a performance equivalent to natural nacre. Both nanosecond (ns) and femtosecond (fs) pulsed lasers were employed for PLD in an iterative approach that involves varying pulse energy, pulse repetition rate, and target-to-substrate distance to achieve the desired brick and bridge characteristics. Scanning electron microscopy, x-ray photoelectron spectroscopy, and optical profilometer were used to evaluate the film thickness, particle size and density, stoichiometry, and surface roughness of thin films. Results indicated that both ns-pulsed and fs-pulsed lasers produce the desired nacre features. However, each laser may be chosen for different reasons: fs-pulsed laser is preferred for much shorter deposition time, better stoichiometry, uniform-sized particles, and uniform film thickness, while ns-pulsed laser is favored for industrial acceptance, reliability, ease of handling, and low cost.

History and current status of commercial pulsed laser deposition equipment

International Nuclear Information System (INIS)

Greer, James A

2014-01-01

This paper will review the history of the scale-up of the pulsed laser deposition (PLD) process from small areas ∼1 cm 2 up to 10 m 2 starting in about 1987. It also documents the history of commercialization of PLD as various companies become involved in selling fully integrated laser deposition tools starting in 1989. The paper will highlight the current state of the art of commercial PLD equipment for R and D that is available on the market today from mainstream vendors as well as production-oriented applications directed at piezo-electric materials for microelectromechanical systems and high-temperature superconductors for coated-conductor applications. The paper clearly demonstrates that considerable improvements have been made to scaling this unique physical vapour deposition process to useful substrate sizes, and that commercial deposition equipment is readily available from a variety of vendors to address a wide variety of technologically important thin-film applications. (paper)

Effect of Boronization on Ohmic Plasmas in NSTX

International Nuclear Information System (INIS)

Skinner, C.H.; Kugel, H.; Maingi, R.; Wampler, W.R.; Blanchard, W.; Bell, M.; Bell, R.; LeBlanc, B.; Gates, D.; Kaye, S.; LaMarche, P.; Menard, J.; Mueller, D.; Na, H.K.; Nishino, N.; Paul, S.; Sabbagh, S.; Soukhanovskii, V.

2001-01-01

Boronization of the National Spherical Torus Experiment (NSTX) has enabled access to higher density, higher confinement plasmas. A glow discharge with 4 mTorr helium and 10% deuterated trimethyl boron deposited 1.7 g of boron on the plasma facing surfaces. Ion beam analysis of witness coupons showed a B+C areal density of 10 to the 18 (B+C) cm to the -2 corresponding to a film thickness of 100 nm. Subsequent ohmic discharges showed oxygen emission lines reduced by x15, carbon emission reduced by two and copper reduced to undetectable levels. After boronization, the plasma current flattop time increased by 70% enabling access to higher density, higher confinement plasmas

Laser wavelength dependent properties of YBa2Cu3O7-δ thin films deposited by laser ablation

International Nuclear Information System (INIS)

Koren, G.; Gupta, A.; Baseman, R.J.; Lutwyche, M.I.; Laibowitz, R.B.

1989-01-01

YBa 2 Cu 3 O 7-δ thin films were deposited onto (100) SrTiO 3 substrates using 1064, 532, 355, 248, and 193 nm laser ablation. Transport measurements show lower normal-state resistivities and higher critical currents in films deposited by the shorter wavelength lasers. The surface morphology of the films was rough with large particulates when the 1064 nm laser was used whereas much smoother surfaces with fewer and smaller particulates were obtained with the UV lasers. It is suggested that the better film quality obtained when the UV lasers are used is due to a small absorption depth of the UV photons in the ceramic target and to higher absorption by the ablated fragments. This leads to smaller ablated species and further fragmentation in the hotter plume and, therefore, to smoother and denser films

Growth modes of pentacene films obtained by pulsed laser deposition

International Nuclear Information System (INIS)

Wisz, G.; Kuzma, M.; Virt, I.; Sagan, P.; Rudyj, I.

2011-01-01

Thin pentacene films were deposited on KCl and ITO/glass substrates by the pulsed laser deposition method (PLD) using a YAG:Nd 3+ laser with a second harmonic (λ = 532 nm). We compared the structure of the layer on differently oriented substrates with respect to the pentacene plasma plume - vertical and parallel orientation. The structure of the layers formed was examined using SEM, RHEED and THEED methods. The lattice parameters of the layer deposited on KCl were determined from THEED pattern (a = 5.928 A, b 7.874 A, c = 14,98 A, α = 76.54 o , β 75.17 o , γ = 89.20 o ). The preferred direction [11-bar 0] of the layer growth on KCl substrate was addressed. The effect of the substrate orientation results in a different growth mode of the layers.

Microdroplet deposition through a film-free laser forward printing technique

Energy Technology Data Exchange (ETDEWEB)

Patrascioiu, A.; Fernandez-Pradas, J.M.; Morenza, J.L. [Departament de Fisica Aplicada i Optica, Universitat de Barcelona, Marti i Franques 1, 08028 Barcelona (Spain); Serra, P., E-mail: pserra@ub.edu [Departament de Fisica Aplicada i Optica, Universitat de Barcelona, Marti i Franques 1, 08028 Barcelona (Spain)

2012-09-15

Highlights: Black-Right-Pointing-Pointer Circular droplets are obtained for a wide range of focusing depths at fixed energy. Black-Right-Pointing-Pointer Focusing depth variation study reveals two abrupt transitions in droplet diameter. Black-Right-Pointing-Pointer Liquid ejection mechanism is mediated by two types of jets of different origin. Black-Right-Pointing-Pointer Evolution of jets depends on the focusing depth accounting for the seen transitions. - Abstract: A recently developed film-free laser forward microprinting technique allows printing transparent and weakly absorbing liquids with high resolution and reproducibility. Its operating principle consists in the tight focusing of ultrashort laser pulses inside the liquid, and near its free surface, such that all the laser energy is absorbed in a small region around the beam waist. A cavitation bubble is then created inside the liquid, whose subsequent expansion results into the ejection of liquid. The collection of the ejected liquid on a substrate leads to the deposition of micron-sized droplets. In this work, we investigate a relevant process parameter of the technique, namely the laser focusing depth, and its influence on the morphology of the deposited droplets. The study reveals that for a fixed laser pulse energy there exists a relatively wide range of focusing depths at which circular and uniform droplets can be printed. The process of liquid ejection is also investigated. Time-resolved images reveal that liquid ejection proceeds through the formation of two kinds of jets which display clearly differentiated dynamics, and which could provide an interpretation for the dependence observed between the morphology of the deposited droplets and the laser focusing depth.

Pulsed laser deposition of AlMgB₁₄ thin films

Energy Technology Data Exchange (ETDEWEB)

Britson, Jason Curtis [Iowa State Univ., Ames, IA (United States)

2008-11-18

Hard, wear-resistant coatings of thin film borides based on AlMgB₁₄ have the potential to be applied industrially to improve the tool life of cutting tools and pump vanes and may account for several million dollars in savings as a result of reduced wear on these parts. Past work with this material has shown that it can have a hardness of up to 45GPa and be fabricated into thin films with a similar hardness using pulsed laser deposition. These films have already been shown to be promising for industrial applications. Cutting tools coated with AlMgB₁₄ used to mill titanium alloys have been shown to substantially reduce the wear on the cutting tool and extend its cutting life. However, little research into the thin film fabrication process using pulsed laser deposition to make AlMgB₁₄ has been conducted. In this work, research was conducted into methods to optimize the deposition parameters for the AlMgB₁₄ films. Processing methods to eliminate large particles on the surface of the AlMgB₁₄ films, produce films that were at least 1m thick, reduce the surface roughness of the films, and improve the adhesion of the thin films were investigated. Use of a femtosecond laser source rather than a nanosecond laser source was found to be effective in eliminating large particles considered detrimental to wear reduction properties from the films. Films produced with the femtosecond laser were also found to be deposited at a rate 100 times faster than those produced with the nanosecond laser. However, films produced with the femtosecond laser developed a relatively high RMS surface roughness around 55nm. Attempts to decrease the surface roughness were largely unsuccessful. Neither increasing the surface temperature of the substrate during deposition nor using a double pulse to ablate the material was found to be extremely successful to reduce the surface roughness. Finally, the adhesion of the thin films to M2 tool steel

Synthesis of Boron Nano wires, Nano tubes, and Nano sheets

International Nuclear Information System (INIS)

Patel, R.B.; Chou, T.; Iqbal, Z.

2014-01-01

The synthesis of boron nano wires, nano tubes, and nano sheets using a thermal vapor deposition process is reported. This work confirms previous research and provides a new method capable of synthesizing boron nano materials. The materials were made by using various combinations of MgB 2 , Mg(BH 4 ) 2 , MCM-41, NiB, and Fe wire. Unlike previously reported methods, a nanoparticle catalyst and a silicate substrate are not required for synthesis. Two types of boron nano wires, boron nano tubes, and boron nano sheets were made. Their morphology and chemical composition were determined through the use of scanning electron microscopy, transmission electron microscopy, and electron energy loss spectroscopy. These boron-based materials have potential for electronic and hydrogen storage applications.

Pulsed laser deposition of lysozyme: the dependence on shot numbers and the angular distribution

DEFF Research Database (Denmark)

Constantinescu, C.; Matei, A.; Schou, Jørgen

2013-01-01

The ejection of molecules from a pressed solid target of lysozyme induced by laser ablation in the UV-regime at a wavelength of 355 nm was investigated. The ablation studies were carried out in vacuum at a laser fluence of 2 J/cm2 for which a significant fraction of proteins remains intact....... This was verified by matrix-assisted laser desorption ionization (MALDI) spectrometry of thin films deposited on silicon substrates. The deposition rate of lysozyme was found to decrease with the number of shots and was correlated with increasing thermal damage of the lysozyme. This was monitored by measurements...... of the optical reflectivity of dry lysozyme. The angular distribution of the mass deposition can be fitted well by Anisimov’s hydrodynamic model. The total deposited yield over the entire hemisphere from direct laser ablation of lysozyme was estimated from this model and found to be three orders of magnitude...

Chromium-doped diamond-like carbon films deposited by dual-pulsed laser deposition

Czech Academy of Sciences Publication Activity Database

Písařík, Petr; Jelínek, Miroslav; Kocourek, Tomáš; Zezulová, M.; Remsa, Jan; Jurek, Karel

2014-01-01

Roč. 117, č. 1 (2014), s. 83-88 ISSN 0947-8396 R&D Projects: GA MŠk LD12069 Institutional support: RVO:68378271 Keywords : diamond like carbon * chromium * contact angle * surface free energy * dual laser deposition * zeta potential Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.704, year: 2014

Morphology and structural studies of WO{sub 3} films deposited on SrTiO{sub 3} by pulsed laser deposition

Energy Technology Data Exchange (ETDEWEB)

Kalhori, Hossein, E-mail: h.kalhori@ph.iut.ac.ir [School of Physics and CRANN, Trinity College, Dublin 2 (Ireland); Department of Physics, Isfahan University of Technology, Isfahan 84156-8311 (Iran, Islamic Republic of); Porter, Stephen B.; Esmaeily, Amir Sajjad; Coey, Michael [School of Physics and CRANN, Trinity College, Dublin 2 (Ireland); Ranjbar, Mehdi; Salamati, Hadi [Department of Physics, Isfahan University of Technology, Isfahan 84156-8311 (Iran, Islamic Republic of)

2016-12-30

Highlights: • Highly oriented WO{sub 3} stoichiometric films were determined using pulsed laser deposition method. • Effective parameters on thin films including temperature, oxygen partial pressure and laser energy fluency was studied. • A phase transition was observed in WO{sub 3} films at 700 °C from monoclinic to tetragonal. - Abstract: WO{sub 3} films have been grown by pulsed laser deposition on SrTiO{sub 3} (001) substrates. The effects of substrate temperature, oxygen partial pressure and energy fluence of the laser beam on the physical properties of the films were studied. Reflection high-energy electron diffraction (RHEED) patterns during and after growth were used to determine the surface structure and morphology. The chemical composition and crystalline phases were obtained by XPS and XRD respectively. AFM results showed that the roughness and skewness of the films depend on the substrate temperature during deposition. Optimal conditions were determined for the growth of the highly oriented films.

Improved stability of titanium based boron-doped chemical vapor deposited diamond thin-film electrode by modifying titanium substrate surface

International Nuclear Information System (INIS)

Lim, P.Y.; Lin, F.Y.; Shih, H.C.; Ralchenko, V.G.; Varnin, V.P.; Pleskov, Yu.V.; Hsu, S.F.; Chou, S.S.; Hsu, P.L.

2008-01-01

The film quality and electrochemical properties of BDD (boron-doped diamond) thin films grown by hot-filament chemical vapor deposition technique on titanium substrates that had been subjected to a range of pre-treatment processes were evaluated. The pre-roughened Ti-substrates are shown to support more adherent BDD films. It is evident that acid-etching the Ti-substrate involves surface hydrogenation that enhances nucleation and formation of diamond thereon. The prepared BDD film exhibits wide potential window and electrochemical reversibility. It also demonstrated a better long-term electrochemical stability based on the low variation in voltametric background current upon the exposing of the electrodes to repeated cycles of electrochemical metal deposition/stripping process

Plume-induced stress in pulsed-laser deposited CeO2 films

International Nuclear Information System (INIS)

Norton, D.P.; Park, C.; Budai, J.D.; Pennycook, S.J.; Prouteau, C.

1999-01-01

Residual compressive stress due to plume-induced energetic particle bombardment in CeO 2 films deposited by pulsed-laser deposition is reported. For laser ablation film growth in low pressures, stresses as high as 2 GPa were observed as determined by substrate curvature and four-circle x-ray diffraction. The amount of stress in the films could be manipulated by controlling the kinetic energies of the ablated species in the plume through gas-phase collisions with an inert background gas. The film stress decreased to near zero for argon background pressures greater than 50 mTorr. At these higher background pressures, the formation of nanoparticles in the deposited film was observed. copyright 1999 American Institute of Physics

Operation and Applications of the Boron Cathodic Arc Ion Source

International Nuclear Information System (INIS)

Williams, J. M.; Freeman, J. H.; Klepper, C. C.; Chivers, D. J.; Hazelton, R. C.

2008-01-01

The boron cathodic arc ion source has been developed with a view to several applications, particularly the problem of shallow junction doping in semiconductors. Research has included not only development and operation of the boron cathode, but other cathode materials as well. Applications have included a large deposition directed toward development of a neutron detector and another deposition for an orthopedic coating, as well as the shallow ion implantation function. Operational experience is described and information pertinent to commercial operation, extracted from these experiments, is presented.

Enhanced field emission characteristics of boron doped diamond films grown by microwave plasma assisted chemical vapor deposition

Energy Technology Data Exchange (ETDEWEB)

Koinkar, Pankaj M. [Center for International Cooperation in Engineering Education (CICEE), University of Tokushima, 2-1 Minami-josanjima-cho, Tokushima 770-8506 (Japan); Patil, Sandip S. [Center for Advanced Studies in Materials Science and Condensed Matter Physics, Department of Physics, University of Pune, Pune 411007 (India); Kim, Tae-Gyu [Department of Nano System and Process Engineering, Pusan National University, 50 Cheonghak-ri, Samrangjin-eup, Miryang, Gyeongnam, Pusan 627-706 (Korea, Republic of); Yonekura, Daisuke [Department of Mechanical Engineering, University of Tokushima, 2-1 Minami-josanjima-cho, Tokushima 770-8506 (Japan); More, Mahendra A., E-mail: mam@physics.unipune.ac.in [Center for Advanced Studies in Materials Science and Condensed Matter Physics, Department of Physics, University of Pune, Pune 411007 (India); Joag, Dilip S. [Center for Advanced Studies in Materials Science and Condensed Matter Physics, Department of Physics, University of Pune, Pune 411007 (India); Murakami, Ri-ichi, E-mail: murakami@me.tokushima-u.ac.jp [Department of Mechanical Engineering, University of Tokushima, 2-1 Minami-josanjima-cho, Tokushima 770-8506 (Japan)

2011-01-01

Boron doped diamond films were synthesized on silicon substrates by microwave plasma chemical vapor deposition (MPCVD) technique. The effect of B{sub 2}O{sub 3} concentration varied from 1000 to 5000 ppm on the field emission characteristics was examined. The surface morphology and quality of films were characterized by scanning electron microscope (SEM) and Raman spectroscopy. The surface morphology obtained by SEM showed variation from facetted microcrystal covered with nanometric grains to cauliflower of nanocrystalline diamond (NCD) particles with increasing B{sub 2}O{sub 3} concentration. The Raman spectra confirm the formation of NCD films. The field emission properties of NCD films were observed to improve upon increasing boron concentration. The values of the onset field and threshold field are observed to be as low as 0.36 and 0.08 V/{mu}m, respectively. The field emission current stability investigated at the preset value of {approx}1 {mu}A is observed to be good, in each case. The enhanced field emission properties are attributed to the better electrical conductivity coupled with the nanometric features of the diamond films.

High-speed deposition of titanium carbide coatings by laser-assisted metal–organic CVD

Energy Technology Data Exchange (ETDEWEB)

Gong, Yansheng [Faculty of Materials Science and Chemistry, China University of Geosciences, Wuhan 430074 (China); Tu, Rong, E-mail: turong@whut.edu.cn [State Key Laboratory of Advanced Technology for Material Synthesis and Processing, Wuhan University of Technology, Wuhan 430070 (China); Goto, Takashi [Institute for Materials Research, Tohoku University, Aoba-ku, 2-1-1 Katahira, Sendai 980-8577 (Japan)

2013-08-01

Graphical abstract: - Highlights: • A semiconductor laser was first used to prepare wide-area LCVD-TiC{sub x} coatings. • The effect of laser power for the deposition of TiC{sub x} coatings was discussed. • TiC{sub x} coatings showed a columnar cross section and a dense surface texture. • TiC{sub x} coatings had a 1–4 order lower laser density than those of previous reports. • This study gives the possibility of LCVD applying on the preparation of TiC{sub x} coating. - Abstract: A semiconductor laser-assisted chemical vapor deposition (LCVD) of titanium carbide (TiC{sub x}) coatings on Al{sub 2}O{sub 3} substrate using tetrakis (diethylamido) titanium (TDEAT) and C{sub 2}H{sub 2} as source materials were investigated. The influences of laser power (P{sub L}) and pre-heating temperature (T{sub pre}) on the microstructure and deposition rate of TiC{sub x} coatings were examined. Single phase of TiC{sub x} coatings were obtained at P{sub L} = 100–200 W. TiC{sub x} coatings had a cauliflower-like surface and columnar cross section. TiC{sub x} coatings in the present study had the highest R{sub dep} (54 μm/h) at a relative low T{sub dep} than those of conventional CVD-TiC{sub x} coatings. The highest volume deposition rate (V{sub dep}) of TiC{sub x} coatings was about 4.7 × 10{sup −12} m{sup 3} s{sup −1}, which had 3–10{sup 5} times larger deposition area and 1–4 order lower laser density than those of previous LCVD using CO{sub 2}, Nd:YAG and argon ion laser.

Nanometer sized structures grown by pulsed laser deposition

KAUST Repository

ElZein, Basma

2015-10-01

Nanometer sized materials can be produced by exposing a target to a laser source to remove material from the target and deposit the removed material onto a surface of a substrate to grow a thin film in a vacuum chamber

Effect of deposition temperature on electron-beam evaporated polycrystalline silicon thin-film and crystallized by diode laser

Energy Technology Data Exchange (ETDEWEB)

Yun, J., E-mail: j.yun@unsw.edu.au; Varalmov, S.; Huang, J.; Green, M. A. [School of Photovoltaic and Renewable Energy Engineering, University of New South Wales, Sydney, New South Wales 2052 (Australia); Kim, K. [School of Photovoltaic and Renewable Energy Engineering, University of New South Wales, Sydney, New South Wales 2052 (Australia); Suntech R and D Australia, Botany, New South Wales 2019 (Australia)

2014-06-16

The effects of the deposition temperature on the microstructure, crystallographic orientation, and electrical properties of a 10-μm thick evaporated Si thin-film deposited on glass and crystallized using a diode laser, are investigated. The crystallization of the Si thin-film is initiated at a deposition temperature between 450 and 550 °C, and the predominant (110) orientation in the normal direction is found. Pole figure maps confirm that all films have a fiber texture and that it becomes stronger with increasing deposition temperature. Diode laser crystallization is performed, resulting in the formation of lateral grains along the laser scan direction. The laser power required to form lateral grains is higher in case of films deposited below 450 °C for all scan speeds. Pole figure maps show 75% occupancies of the (110) orientation in the normal direction when the laser crystallized film is deposited above 550 °C. A higher density of grain boundaries is obtained when the laser crystallized film is deposited below 450 °C, which limits the solar cell performance by n = 2 recombination, and a performance degradation is expected due to severe shunting.

Pulsed 1064 nm Nd-YAG Laser Deposition of Titanium on Silicon in a Nitrogen Environment

Directory of Open Access Journals (Sweden)

Wilson Garcia

1999-12-01

Full Text Available Pulsed laser deposition (PLD technique was demonstrated for the deposition of titanium nitride (TiN thin films on Si (100 substrates. A 1064 nm pulsed Nd-YAG laser is focused on a titanium (99.5% target in a nitrogen environment to generate the atomic flux needed for the film deposition. Spectroscopic analysis of the plasma emission indicates the presence of atomic titanium and nitrogen, which are the precursors of TiN. Images of the films grown at different laser pulse energies show an increase in the number and size of deposited droplets and clusters with increasing laser pulse energy. A decrease in cluster and droplet size is also observed, with an increase in substrate temperature. EDS data show an increase in the titanium peak relative to the silicon as the ambient nitrogen pressure is decreased. An increase in deposition time was found to result in large clusters and irregularly shaped structures on the substrate. Post-deposition annealing of the samples enhanced the crystallinity of the film.

Fractionation of boron isotopes in Icelandic hydrothermal systems

International Nuclear Information System (INIS)

Aggarwal, J.K.

1995-01-01

Boron isotope ratios have been determined in a variety of different geothermal waters from hydrothermal systems across Iceland. Isotope ratios from the high temperature meteoric water recharged systems reflect the isotope ratio of the host rocks without any apparent fractionation. Seawater recharged geothermal systems exhibit more positive δ 1 1B values than the meteoric water recharged geothermal systems. Water/rock ratios can be assessed from boron isotope ratios in the saline hydrothermal systems. Low temperature hydrothermal systems also exhibit more positive δ 1 1B than the high temperature systems, indicating fractionation of boron due to absorption of the lighter isotope onto secondary minerals. Fractionation of boron in carbonate deposits may indicate the level of equilibrium attained within the systems. (author). 14 refs., 2 figs

Deposition of multicomponent chromium carbide coatings using a non-conventional source of chromium and silicon with micro-additions of boron

Energy Technology Data Exchange (ETDEWEB)

Gonzalez Ruiz, Jesus Eduardo, E-mail: jesus.gonzalez@biomat.uh.cu [Biomaterials Center, University of Havana (Cuba); Rodriguez Cristo, Alejandro [Mechanical Plants Company, Road of the Sub-Plan, Farm La Cana, Santa Clara, Villa Clara (Cuba); Ramos, Adrian Paz [Department of Chemistry, Universite de Montreal, Quebec (Canada); Quintana Puchol, Rafael [Welding Research Center, Central University Marta Abreu of Las Villas, Villa Clara (Cuba)

2017-01-15

The chromium carbide coatings are widely used in the mechanical industry due to its corrosion resistance and mechanical properties. In this work, we evaluated a new source of chromium and silicon with micro-additions of boron on the deposition of multi-component coatings of chromium carbides in W108 steel. The coatings were obtained by the pack cementation method, using a simultaneous deposition at 1000 deg for 4 hours. The coatings were analyzed by X-ray diffraction, X-ray energy dispersive spectroscopy, optical microscopy, microhardness test method and pin-on-disc wear test. It was found that the coatings formed on W108 steel were mainly constituted by (Cr,Fe){sub 23}C{sub 6} , (Cr,Fe){sub 7} C{sub 3} , Cr{sub 5-x}Si{sub 3-x} C{sub x+z}, Cr{sub 3} B{sub 0,44}C{sub 1,4} and (or) Cr{sub 7} BC{sub 4} . The carbide layers showed thicknesses between 14 and 15 μm and maximum values of microhardness between 15.8 and 18.8 GPa. Also, the micro-additions of boron to the mixtures showed statistically significant influence on the thickness, microhardness and abrasive wear resistance of the carbide coatings. (author)

In-situ boron doping of chemical-bath deposited CdS thin films

International Nuclear Information System (INIS)

Khallaf, Hani; Park, S.; Schulte, Alfons; Chai, Guangyu; Lupan, Oleg; Chow, Lee; Heinrich, Helge

2009-01-01

In-situ boron doping of CdS using chemical-bath deposition (CBD) is reported. The effect of B doping on optical properties, as well as electrical properties, crystal structure, chemistry, and morphology of CdS films is studied. We present a successful approach towards B doping of CdS using CBD, where a resistivity as low as 1.7 x 10 -2 Ωcm and a carrier density as high as 1.91 x 10 19 cm -3 were achieved. The bandgap of B-doped films was found to slightly decrease as the[B]/[Cd] ratio in the solution increases. X-ray diffraction studies showed B 3+ ions likely enter the lattice substitutionally. A phase transition, due to annealing, as well as induced lattice defects, due to B doping, were detected by micro-Raman spectroscopy and transmission electron microscopy. The chemistry and morphology of films were unaffected by B doping. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Laser metal deposition of Ti6Al4V: A study on the effect of laser power on microstructure and microhardness

CSIR Research Space (South Africa)

Mahamood, RM

2013-03-01

Full Text Available The effect of laser power on the resulting microstructure and microhardness of laser metal deposited Ti6Al4V powder on Ti6Al4V substrate has been investigated. The tracks were deposited using 99.6 % pure Ti6Al4V powder of particle size ranging...

Discharge cleaning on TFTR after boronization

International Nuclear Information System (INIS)

Mueller, D.; Dylla, H.F.; LaMarche, P.H.; Bell, M.G.; Blanchard, W.; Bush, C.E.; Gentile, C.; Hawryluk, R.J.; HIll, K.W.; Janos, A.C.; Jobes, F.C; Owens, D.K.; Pearson, G.; Schivell, J.; Ulrickson, M.A.; Vannoy, C.; Wong, K.L.

1991-05-01

At the beginning of the 1990 TFTR experimental run, after replacement of POCO-AXF-5Q graphite tiles on the midplane of the bumper limiter by carbon fiber composite (CFC) tiles and prior to any Pulse Discharge Cleaning (PDC), boronization was performed. Boronization is the deposition of a layer of boron and carbon on the vacuum vessel inner surface by a glow discharge in a diborane, methane and helium mixture. The amount of discharge cleaning required after boronization was substantially reduced compared to that which was needed after previous openings when boronization was not done. Previously, after a major shutdown, about 10 5 low current (∼20 kA) Taylor Discharge Cleaning (TDC) pulses were required before high current (∼400 kA) aggressive Pulse Discharge Cleaning (PDC) pulses could be performed successfully. Aggressive PDC is used to heat the limiters from the vessel bakeout temperature of 150 degrees C to 250 degrees C for a period of several hours. Heating the limiters is important to increase the rate at which water is removed from the carbon limiter tiles. After boronization, the number of required TDC pulses was reduced to <5000. The number of aggressive PDC pulses required was approximately unchanged. 14 refs., 1 tab

Picosecond and subpicosecond pulsed laser deposition of Pb thin films

Directory of Open Access Journals (Sweden)

F. Gontad

2013-09-01

Full Text Available Pb thin films were deposited on Nb substrates by means of pulsed laser deposition (PLD with UV radiation (248 nm, in two different ablation regimes: picosecond (5 ps and subpicosecond (0.5 ps. Granular films with grain size on the micron scale have been obtained, with no evidence of large droplet formation. All films presented a polycrystalline character with preferential orientation along the (111 crystalline planes. A maximum quantum efficiency (QE of 7.3×10^{-5} (at 266 nm and 7 ns pulse duration was measured, after laser cleaning, demonstrating good photoemission performance for Pb thin films deposited by ultrashort PLD. Moreover, Pb thin film photocathodes have maintained their QE for days, providing excellent chemical stability and durability. These results suggest that Pb thin films deposited on Nb by ultrashort PLD are a noteworthy alternative for the fabrication of photocathodes for superconductive radio-frequency electron guns. Finally, a comparison with the characteristics of Pb films prepared by ns PLD is illustrated and discussed.

An analytical–numerical model of laser direct metal deposition track and microstructure formation

International Nuclear Information System (INIS)

Ahsan, M Naveed; Pinkerton, Andrew J

2011-01-01

Multiple analytical and numerical models of the laser metal deposition process have been presented, but most rely on sequential solution of the energy and mass balance equations or discretization of the problem domain. Laser direct metal deposition is a complex process involving multiple interdependent processes which can be best simulated using a fully coupled mass-energy balance solution. In this work a coupled analytical–numerical solution is presented. Sub-models of the powder stream, quasi-stationary conduction in the substrate and powder assimilation into the area of the substrate above the liquidus temperature are combined. An iterative feedback loop is used to ensure mass and energy balances are maintained at the melt pool. The model is verified using Ti–6Al–4V single track deposition, produced with a coaxial nozzle and a diode laser. The model predictions of local temperature history, the track profile and microstructure scale show good agreement with the experimental results. The model is a useful industrial aid and alternative to finite element methods for selecting the parameters to use for laser direct metal deposition when separate geometric and microstructural outcomes are required

The role of transverse speed on deposition height and material efficiency in laser deposited titanium alloy

CSIR Research Space (South Africa)

Mahamood, RM

2013-03-01

Full Text Available The most commonly used aerospace titanium alloy, Ti6Al4V, was deposited on Ti6Al4V plate of dimension 72 x 72 x5mm. The laser power of 3 kW, powder flow rate of 1.44 g/min and gas flow rate of 4 l/min were used throughout the deposition process...

The influences of target properties and deposition times on pulsed laser deposited hydroxyapatite films

International Nuclear Information System (INIS)

Bao Quanhe; Chen Chuanzhong; Wang Diangang; Liu Junming

2008-01-01

Hydroxyapatite films were produced by pulsed laser deposition from three kinds of hydroxyapatite targets and with different deposition times. A JXA-8800R electron probe microanalyzer (EPMA) with a Link ISIS300 energy spectrum analyzer was used to give the secondary electron image (SE) and determine the element composition of the films. The phases of thin film were analyzed by a D/max-γc X-ray diffractometer (XRD). The Fourier-transform infrared spectroscopy (FT-IR) was used to characterize the hydroxyl, phosphate and other functional groups. The results show that deposited films were amorphous which mainly composed of droplet-like particles and vibration of PO 4 3- groups. With the target sintering temperature deposition times increasing, the density of droplets is decreased. While with deposition times increasing, the density of droplets is increased. With the target sintering temperature and deposition time increasing, the ratio of Ca/P is increasing and higher than that of theoretical value of HA

Sub-monolayer Deposited InGaAs/GaAs Quantum Dot Heterostructures and Lasers

DEFF Research Database (Denmark)

Xu, Zhangcheng

2004-01-01

deposition, the deposition of a short-period InAs/GaAs superlattice on GaAs (100) surface with an InAs effective thickness of less than 1 monolayer (ML), results in the formatioin of nanometer scale (In,Ga)As QDs of a non-SK class.In this thesis, the SML InGaAs/GaAs QDs are formed by 10 cycles of alternate......The fabrication, characterization and exploitation of self-assembled quantum dot (QD) heterostructures have attracted much attention not only in basic research, but also by the promising device applications such as QD lasers. The Stranski-Krastanow (SK) growth and the submonolayer (SML) deposition...... deposition of 0.5 ML InAs and 2.5 MLGaAs. The growth, structure, and optical properties of SML InGaAs/GaAs QD heterostructures are investigated in detail. SML InGaAs/GaAs QD lasers lasing even at room temperature have been successfully realized. The gain properties of SML InGaAs QD lasers are studied...

Pulsed-laser deposited ZnO for device applications

NARCIS (Netherlands)

King, S.L.; Gardeniers, Johannes G.E.; Boyd, I.W.

1996-01-01

The study investigates the growth by pulsed-laser deposition (PLD) of ZnO thin films for the eventual incorporation into piezo-electric actuators and other sensors being developed at the University of Twente. All films are purely c-axis oriented, and results are presented which suggest the

Bioactive glass and hydroxyapatite thin films obtained by pulsed laser deposition

Energy Technology Data Exchange (ETDEWEB)

Gyorgy, E. [National Institute for Lasers, Plasma and Radiation Physics, P.O. Box MG 36, 77125 Bucharest (Romania) and Consejo Superior de Investigaciones Cientificas, Instituto de Ciencia de Materiales de Barcelona, Campus UAB, 08193 Bellaterra (Spain)]. E-mail: egyorgy@icmab.es; Grigorescu, S. [National Institute for Lasers, Plasma and Radiation Physics, P.O. Box MG 36, 77125 Bucharest (Romania); Socol, G. [National Institute for Lasers, Plasma and Radiation Physics, P.O. Box MG 36, 77125 Bucharest (Romania); Mihailescu, I.N. [National Institute for Lasers, Plasma and Radiation Physics, P.O. Box MG 36, 77125 Bucharest (Romania); Janackovic, D. [Faculty of Technology and Metallurgy, University of Belgrade, Karnegijeva 4, 11000 Belgrade (Serbia); Dindune, A. [Institute of Inorganic Chemistry of the Riga Technical University (Latvia); Plasma and Ceramic Technologies Ltd. (PCT Ltd.) (Latvia); Kanepe, Z. [Institute of Inorganic Chemistry of the Riga Technical University (Latvia); Plasma and Ceramic Technologies Ltd. (PCT Ltd.) (Latvia); Palcevskis, E. [Plasma and Ceramic Technologies Ltd. (PCT Ltd.) (Latvia); Zdrentu, E.L. [Institute of Biochemistry, Splaiul Independentei 296, Bucharest (Romania); Petrescu, S.M. [Institute of Biochemistry, Splaiul Independentei 296, Bucharest (Romania)

2007-07-31

Bioactive glass (BG), calcium hydroxyapatite (HA), and ZrO{sub 2} doped HA thin films were grown by pulsed laser deposition on Ti substrates. An UV KrF{sup *} ({lambda} = 248 nm, {tau} {>=} 7 ns) excimer laser was used for the multi-pulse irradiation of the targets. The substrates were kept at room temperature or heated during the film deposition at values within the (400-550 deg. C) range. The depositions were performed in oxygen and water vapor atmospheres, at pressure values in the range (5-40 Pa). The HA coatings were heat post-treated for 6 h in a flux of hot water vapors at the same temperature as applied during deposition. The surface morphology, chemical composition, and crystalline quality of the obtained thin films were studied by scanning electron microscopy, atomic force microscopy, and X-ray diffractometry. The films were seeded for in vitro tests with Hek293 (human embryonic kidney) cells that revealed a good adherence on the deposited layers. Biocompatibility tests showed that cell growth was better on HA than on BG thin films.

Microstructural control during direct laser deposition of a β-titanium alloy

International Nuclear Information System (INIS)

Qiu, Chunlei; Ravi, G.A.; Attallah, Moataz M.

2015-01-01

Graphical abstract: Microstructural development of Ti5553 during Direct Laser Deposition (DLD). - Highlights: • Good structural and geometrical integrity could be achieved by process design. • Build height increases with decreased scanning speed and increased powder flow rate. • Keeping Z increment close to actual layer thickness is crucial for consistent building. • The laser deposited Ti5553 are dominated by mixed columnar and equiaxed grains. • In situ dwelling and annealing promote α precipitation which improves microhardness. - Abstract: A concern associated with Direct Laser Deposition (DLD) is the difficulty in controlling microstructure due to rapid cooling rates after deposition, particularly in beta-Ti alloys. In these alloys, the beta-phase is likely to exist following DLD, instead of the desirable duplex alpha + beta microstructure that gives a good balance of properties. Thus, in this work, a parametric study was performed to assess the role of DLD parameters on porosity, build geometry, and microstructure in a beta-Ti alloy, Ti–5Al–5Mo–5V–3Cr (Ti5553). The builds were examined using optical microscopy, scanning electron microscopy, and X-ray diffraction. Microhardness measurements were performed to assess the degree of re-precipitation of alpha-phase following an in situ dwelling and laser annealing procedure. The study identified several processing conditions that enable deposition of samples with the desired geometry and low porosity level. The microstructure was dominated by beta-phase, except for the region near the substrate where a limited amount of alpha-precipitates was present due to reheating effect. Although the microstructure was a mixture of equiaxed and columnar beta-grains alongside infrequent fine alpha-precipitates, the builds showed fairly uniform microhardness in different regions. In situ dwelling and annealing did not cause an obvious change in porosity, but did promote the formation of alpha-precipitates

Laser assisted modification and chemical metallization of electron-beam deposited ceria thin films

International Nuclear Information System (INIS)

Krumov, E.; Starbov, N.; Starbova, K.; Perea, A.; Solis, J.

2009-01-01

Excimer laser processing is applied for tailoring the surface morphology and phase composition of CeO 2 ceramic thin films. E-beam evaporation technique is used to deposit samples on stainless steel and silicate glass substrates. The films are then irradiated with ArF* excimer laser pulses under different exposure conditions. Scanning electron microscopy, optical spectrophotometry, X-ray diffractometry and EDS microanalysis are used to characterize the non-irradiated and laser-processed films. Upon UV laser exposure there is large increase of the surface roughness that is accompanied by photo-darkening and ceria reduction. It is shown that the laser induced changes in the CeO 2 films facilitate the deposition of metal nano-aggregates in a commercial copper electroless plating bath. The significance of laser modification as a novel approach for the production of CeO 2 based thin film catalysts is discussed.

Laser assisted modification and chemical metallization of electron-beam deposited ceria thin films

Energy Technology Data Exchange (ETDEWEB)

Krumov, E., E-mail: emodk@clf.bas.bg [Central Laboratory of Photoprocesses ' Acad. Jordan Malinowski' , Bulgarian Academy of Sciences, Acad. Georgy Bonchev Str., bl. 109, 1113 Sofia (Bulgaria); Starbov, N.; Starbova, K. [Central Laboratory of Photoprocesses ' Acad. Jordan Malinowski' , Bulgarian Academy of Sciences, Acad. Georgy Bonchev Str., bl. 109, 1113 Sofia (Bulgaria); Perea, A.; Solis, J. [Instituto de Optica ' Daza de Valdes' , CSIC, 28006 Madrid (Spain)

2009-11-15

Excimer laser processing is applied for tailoring the surface morphology and phase composition of CeO{sub 2} ceramic thin films. E-beam evaporation technique is used to deposit samples on stainless steel and silicate glass substrates. The films are then irradiated with ArF* excimer laser pulses under different exposure conditions. Scanning electron microscopy, optical spectrophotometry, X-ray diffractometry and EDS microanalysis are used to characterize the non-irradiated and laser-processed films. Upon UV laser exposure there is large increase of the surface roughness that is accompanied by photo-darkening and ceria reduction. It is shown that the laser induced changes in the CeO{sub 2} films facilitate the deposition of metal nano-aggregates in a commercial copper electroless plating bath. The significance of laser modification as a novel approach for the production of CeO{sub 2} based thin film catalysts is discussed.

Structural Modification in Carbon Nanotubes by Boron Incorporation

Directory of Open Access Journals (Sweden)

Handuja Sangeeta

2009-01-01

Full Text Available Abstract We have synthesized boron-incorporated carbon nanotubes (CNTs by decomposition of ferrocene and xylene in a thermal chemical vapor deposition set up using boric acid as the boron source. Scanning and transmission electron microscopy studies of the synthesized CNT samples showed that there was deterioration in crystallinity and improvement in alignment of the CNTs as the boron content in precursor solution increased from 0% to 15%. Raman analysis of these samples showed a shift of ~7 cm−1in wave number to higher side and broadening of the G band with increasing boron concentration along with an increase in intensity of the G band. Furthermore, there was an increase in the intensity of the D band along with a decrease in its wave number position with increase in boron content. We speculate that these structural modifications in the morphology and microstructure of CNTs might be due to the charge transfer from boron to the graphite matrix, resulting in shortening of the carbon–carbon bonds.

Fluorine and boron co-doped diamond-like carbon films deposited by pulsed glow discharge plasma immersion ion processing

CERN Document Server

He, X M; Peters, A M; Taylor, B; Nastasi, M

2002-01-01

Fluorine (F) and boron (B) co-doped diamond-like carbon (FB-DLC) films were prepared on different substrates by the plasma immersion ion processing (PIIP) technique. A pulse glow discharge plasma was used for the PIIP deposition and was produced at a pressure of 1.33 Pa from acetylene (C sub 2 H sub 2), diborane (B sub 2 H sub 6), and hexafluoroethane (C sub 2 F sub 6) gas. Films of FB-DLC were deposited with different chemical compositions by varying the flow ratios of the C sub 2 H sub 2 , B sub 2 H sub 6 , and C sub 2 F sub 6 source gases. The incorporation of B sub 2 H sub 6 and C sub 2 F sub 6 into PIIP deposited DLC resulted in the formation of F-C and B-C hybridized bonding structures. The levels of the F and B concentrations effected the chemical bonding and the physical properties as was evident from the changes observed in density, hardness, stress, friction coefficient, and contact angle of water on films. Compared to B-doped or F-doped DLC films, the F and B co-doping of DLC during PIIP deposition...

Laser Photolysis and Thermolysis of Organic Selenides and Tellurides for Chemical Gas-phase Deposition of Nanostructured Materials

Directory of Open Access Journals (Sweden)

Josef Pola

2009-03-01

Full Text Available Laser radiation-induced decomposition of gaseous organic selenides and tellurides resulting in chemical deposition of nanostructured materials on cold surfaces is reviewed with regard to the mechanism of the gas-phase decomposition and properties of the deposited materials. The laser photolysis and laser thermolysis of the Se and Te precursors leading to chalcogen deposition can also serve as a useful approach to nanostructured chalcogen composites and IVA group (Si, Ge, Sn element chalcogenides provided that it is carried out simultaneously with laser photolysis or thermolysis of polymer and IVA group element precursor.

Source of boron in the Palokas gold deposit, northern Finland: evidence from boron isotopes and major element composition of tourmaline

Science.gov (United States)

Ranta, Jukka-Pekka; Hanski, Eero; Cook, Nick; Lahaye, Yann

2017-06-01

The recently discovered Palokas gold deposit is part of the larger Rompas-Rajapalot gold-mineralized system located in the Paleoproterozoic Peräpohja Belt, northern Finland. Tourmaline is an important gangue mineral in the Palokas gold mineralization. It occurs as tourmalinite veins and as tourmaline crystals in sulfide-rich metasomatized gold-bearing rocks. In order to understand the origin of tourmaline in the gold-mineralized rocks, we have investigated the major element chemistry and boron isotope composition of tourmaline from three areas: (1) the Palokas gold mineralization, (2) a pegmatitic tourmaline granite, and (3) the evaporitic Petäjäskoski Formation. Based on textural evidence, tourmaline in gold mineralization is divided into two different types. Type 1 is located within the host rock and is cut by rock-forming anthophyllite crystals. Type 2 occurs in late veins and/or breccia zones consisting of approximately 80% tourmaline and 20% sulfides, commonly adjacent to quartz veins. All the studied tourmaline samples belong to the alkali-group tourmaline and can be classified as dravite and schorl. The δ11B values of the three localities lie in the same range, from 0 to -4‰. Tourmaline from the Au mineralization and from the Petäjäskoski Formation has similar compositional trends. Mg is the major substituent for Al; inferred low Fe3+/Fe2+ ratios and Na values (molybdenite related to the tourmaline-sulfide-quartz veins, we propose that the tourmaline-forming process is a result of a single magmatic-hydrothermal event related to the extensive granite magmatism at around 1.79-1.77 Ga. Tourmaline was crystallized throughout the hydrothermal process, which resulted in the paragenetic variation between type 1 and type 2. The close association of tourmaline and gold suggests that the gold precipitated from the same boron-rich source as tourmaline.

Biogeochemical cycle of boron in a forest ecosystem: the case study of Montiers beech-stand

International Nuclear Information System (INIS)

Roux, Philippe

2016-01-01

This thesis aims at establishing and understanding the biogeochemical cycle of boron and its isotopes within a forest ecosystem. In that context, many questions remain concerning the dynamics of boron within terrestrial ecosystems: - What are the major sources of boron? - What type of transfer occurs between the compartments of the environment? - What mechanisms are controlling those transfers? In order to establish this biogeochemical cycle, we quantified the different stocks (vegetation, humus and soil) and fluxes (atmospheric dust and dissolved deposition, throughfall, stem-flows, litterfall and drainage) of boron in the study site of Montiers. The use of boron isotopes will give us insight concerning the mechanisms controlling the dynamics of boron. This thesis is divided in 4 main parts: 1. The first part aims at establishing a new method of extraction, purification and measurement of boron and its isotopes within vegetation samples. 2. The second part focuses on the sources and mechanisms controlling boron within atmospheric dust and dissolved deposition on the study site of Montiers. 3. The third part aims at establishing the stocks and fluxes of boron on two distinct soils: a rendisoil (basic pH) and an alocrisoil (acid pH). The goal is to determine the influence of different soil properties on boron dynamics within its biogeochemical cycle. 4. The last part aims at establishing a model of boron and boron isotopes dynamics in the soil plant system. This model is mainly based of the measurement made in 2012. (author) [fr

Pulsed laser deposition of high Tc superconducting thin films

International Nuclear Information System (INIS)

Singh, R.K.; Narayan, J.

1990-01-01

This paper reports on the pulsed laser evaporation (PLE) technique for deposition of thin films characterized by a number of unique properties. Based on the experimental characteristics, a theoretical model is developed which considers the formation and anisotropic three dimensional expansion of the laser generated plasma. This model explains most of the experimental features observed in PLE. We have also employed the PLE technique for in-situ fabrication of YBa 2 Cu 3 O 7 superconducting thin films on different substrates in the temperature range of 500--650 degrees C. At temperatures below 600 degrees C, a biased interposing ring between the substrate and the target was found to significantly improve the superconducting properties. The minimum ion channeling yields were between 3--3.5% for films deposited on (100) SrTiO 3 and (100) LaAlO 3 substrates

Parameters nanodimensional zinc films deposited by the laser method in vacuum

International Nuclear Information System (INIS)

Goncharov, V.K.; Gusakov, G.A.; Puzyrev, M.V.

2013-01-01

The investigation of the thickness and structure of a zinc films surface produced by the laser-plasma deposition has been carried out. The dependence of a film thickness and surface structure from laser radiation intensity has been determined. Threshold intensity has been determined when an evaporation of a target material begins. (authors)

Electrochemical characterization of doped diamond-coated carbon fibers at different boron concentrations

Energy Technology Data Exchange (ETDEWEB)

Almeida, E.C. [INPE, CP 515, Sao Jose dos Campos, SP 12201-970 (Brazil)]. E-mail: erica@las.inpe.br; Diniz, A.V. [INPE, CP 515, Sao Jose dos Campos, SP 12201-970 (Brazil); Trava-Airoldi, V.J. [INPE, CP 515, Sao Jose dos Campos, SP 12201-970 (Brazil); Ferreira, N.G. [CTA-Divisao de Materiais, Sao Jose dos Campos, SP 12228-904 (Brazil)

2005-08-01

Doped diamond films have been deposited on carbon fibers (felt) obtained from polyacrylonitrile at different levels of boron doping. For a successful coating of the fibers, an ultrasonic pretreatment in a bath of diamond powder dissolved in hexane was required. Films were grown on both sample sides, simultaneously, by hot filament-assisted chemical vapour deposition technique at 750 deg. C from a 0.5% H{sub 2}/CH{sub 4} mixture at a total pressure of 6.5 x 10{sup 3} Pa. Boron was obtained from H{sub 2} forced to pass through a bubbler containing B{sub 2}O{sub 3} dissolved in methanol. The doping level studied corresponds to films with acceptor concentrations in the range of 6.5 x 10{sup 18} to 1.5 x 10{sup 21} cm{sup -} {sup 3}, obtained from Mott-Schottky plots. Scanning electron microscopy analyses evidenced fibers totally covered with high quality polycrystalline boron-doped diamond film, also confirmed by Raman spectroscopy spectra. Diamond electrodes grown on carbon fibers demonstrated similar electrochemical behavior obtained from films on Si substrate, for ferri/ferrocyanide redox couple as a function of boron content. The boron content influences electrochemical surface area. A lower boron concentration provides a higher growth rate that results in a higher surface area.

Characterization of ethylcellulose and hydroxypropyl methylcellulose thin films deposited by matrix-assisted pulsed laser evaporation

Energy Technology Data Exchange (ETDEWEB)

Palla-Papavlu, A., E-mail: apalla@nipne.ro [National Institute for Lasers, Plasma and Radiation Physics, PO Box MG-36, Magurele, RO-077125 Bucharest (Romania); Rusen, L.; Dinca, V.; Filipescu, M. [National Institute for Lasers, Plasma and Radiation Physics, PO Box MG-36, Magurele, RO-077125 Bucharest (Romania); Lippert, T. [Paul Scherrer Institut, General Energy Research Department, 5232 Villigen PSI (Switzerland); Dinescu, M. [National Institute for Lasers, Plasma and Radiation Physics, PO Box MG-36, Magurele, RO-077125 Bucharest (Romania)

2014-05-01

In this study is reported the deposition of hydroxypropyl methylcellulose (HPMC) and ethylcellulose (EC) by matrix-assisted pulsed laser evaporation (MAPLE). Both HPMC and EC were deposited on silicon substrates using a Nd:YAG laser (266 nm, 5 ns laser pulse and 10 Hz repetition rate) and then characterized by atomic force microscopy and Fourier transform infrared spectroscopy. It was found that for laser fluences up to 450 mJ/cm{sup 2} the structure of the deposited HPMC and EC polymer in the thin film resembles to the bulk. Morphological investigations reveal island features on the surface of the EC thin films, and pores onto the HPMC polymer films. The obtained results indicate that MAPLE may be an alternative technique for the fabrication of new systems with desired drug release profile.

Characterization of ethylcellulose and hydroxypropyl methylcellulose thin films deposited by matrix-assisted pulsed laser evaporation

Science.gov (United States)

Palla-Papavlu, A.; Rusen, L.; Dinca, V.; Filipescu, M.; Lippert, T.; Dinescu, M.

2014-05-01

In this study is reported the deposition of hydroxypropyl methylcellulose (HPMC) and ethylcellulose (EC) by matrix-assisted pulsed laser evaporation (MAPLE). Both HPMC and EC were deposited on silicon substrates using a Nd:YAG laser (266 nm, 5 ns laser pulse and 10 Hz repetition rate) and then characterized by atomic force microscopy and Fourier transform infrared spectroscopy. It was found that for laser fluences up to 450 mJ/cm2 the structure of the deposited HPMC and EC polymer in the thin film resembles to the bulk. Morphological investigations reveal island features on the surface of the EC thin films, and pores onto the HPMC polymer films. The obtained results indicate that MAPLE may be an alternative technique for the fabrication of new systems with desired drug release profile.

Comparison of the influence of boron and aluminium doping on the material properties of electrochemically deposited ZnO films

Energy Technology Data Exchange (ETDEWEB)

Calnan, Sonya [Helmholtz-Zentrum für Materialien und Energie GmbH, Hahn-Meitner Platz 1, 14109 Berlin (Germany); Riedel, Wiebke; Gledhill, Sophie [Helmholtz-Zentrum für Materialien und Energie GmbH, Hahn-Meitner Platz 1, 14109 Berlin (Germany); Fachbereich Physik, Freie Universitaet Berlin, Arnimallee 14, 14195 Berlin (Germany); Stannowski, Bernd [Helmholtz-Zentrum für Materialien und Energie GmbH, Hahn-Meitner Platz 1, 14109 Berlin (Germany); Lux-Steiner, Martha Ch. [Helmholtz-Zentrum für Materialien und Energie GmbH, Hahn-Meitner Platz 1, 14109 Berlin (Germany); Fachbereich Physik, Freie Universitaet Berlin, Arnimallee 14, 14195 Berlin (Germany); Schlatmann, Rutger [Helmholtz-Zentrum für Materialien und Energie GmbH, Hahn-Meitner Platz 1, 14109 Berlin (Germany); Fachbereich 1 Ingenieurwissenschaften I, University of Applied Science (HTW) Berlin, Wilhelminenhofstraße 75 A, 12459 Berlin (Germany)

2015-11-02

The effect of varying the boron and aluminium content of the starting electrolyte for extrinsically doped ZnO films grown on SnO{sub 2}:F substrates by electrochemical deposition was investigated. The ZnO:B film surface was characterized by grains with mainly hexagonal faces exposed while the exposed faces of the ZnO:Al grains were rectangular. Whereas a B{sup 3+}/Zn{sup 2+} ratio of up to 10 at.% in the electrolyte had no significant effect on the crystalline structure of the ZnO films, an Al{sup 3+}/Zn{sup 2+} ratio above 0.25 at.% increased the disorder in the crystalline structure. All the boron doped films exhibit a strong E{sub 2}-high Raman mode related to wurtzite ZnO structure but this peak was much weaker for ZnO:Al and diminished with increasing Al incorporation in the films. Exposing the films to ultra-violet light reduced their effective sheet resistance from values beyond measurement range to values between 40 and 5000 kΩ/sq for film thicknesses of 200–550 nm. Inspection of the optical spectra near the bandgap edge and the plasma edge in the mid infrared range, showed that the Al-doping resulted in a higher carrier concentration ~ 10{sup 20} cm{sup −3} than B-doping. X-ray electron spectroscopy showed that the dopant efficiency was limited by the absence of dopant atoms near the surface of all the ZnO:B films and of the lightly doped ZnO:Al and, by the formation of aluminium oxide at the surface of the more highly doped ZnO:Al films. - Highlights: • Crystalline ZnO grown by electrochemical deposition. • Comparison of influence of H{sub 3}BO{sub 3} and Al(NO{sub 3}){sub 3} as dopant sources. • Different ZnO crystalline orientation for Al and boron doping. • Film surface chemical composition suppressed electrical conductivity.

Growth of superconducting MgB2 films by pulsed-laser deposition using a Nd-YAG laser

International Nuclear Information System (INIS)

Badica, P; Togano, K; Awaji, S; Watanabe, K

2006-01-01

Thin films of MgB 2 on r-cut Al 2 O 3 substrates have been grown by pulsed-laser deposition (PLD) using a Nd-YAG laser (fourth harmonic-266 nm) instead of the popular KrF excimer laser. The growth window to obtain superconducting films is laser energy 350-450 mJ and vacuum pressure with Ar-buffer gas of 1-8/10 Pa (initial background vacuum 0.5-1 x 10 -3 Pa). Films were deposited at room temperature and post-annealed in situ and ex situ at temperatures of 500-780 0 C and up to 1 h. Films are randomly oriented with maximum critical temperature (offset of resistive transition) of 27 K. SEM/TEM/EDS investigations show that they are mainly composed of small sphere-like particles (≤20 nm), and contain oxygen and some carbon, uniformly distributed in the flat matrix, but the amount of Mg and/or oxygen is higher in the aggregates-droplets (100-1000 nm) observed on the surface of the film's matrix. Some aspects of the processing control and dependences on film characteristics are discussed. The technique is promising for future development of coated conductors

Fusion reactions initiated by laser-accelerated particle beams in a laser-produced plasma

International Nuclear Information System (INIS)

Labaune, C.; Baccou, C.; Loisel, G.; Yahia, V.; Depierreux, S.; Goyon, C.; Rafelski, J.

2013-01-01

The advent of high-intensity-pulsed laser technology enables the generation of extreme states of matter under conditions that are far from thermal equilibrium. This in turn could enable different approaches to generating energy from nuclear fusion. Relaxing the equilibrium requirement could widen the range of isotopes used in fusion fuels permitting cleaner and less hazardous reactions that do not produce high-energy neutrons. Here we propose and implement a means to drive fusion reactions between protons and boron-11 nuclei by colliding a laser-accelerated proton beam with a laser-generated boron plasma. We report proton-boron reaction rates that are orders of magnitude higher than those reported previously. Beyond fusion, our approach demonstrates a new means for exploring low-energy nuclear reactions such as those that occur in astrophysical plasmas and related environments. (authors)

Applications of ultra-short pulsed laser ablation: thin films deposition and fs/ns dual-pulse laser-induced breakdown spectroscopy

International Nuclear Information System (INIS)

Teghil, R; De Bonis, A; Galasso, A; Santagata, A; Albano, G; Villani, P; Spera, D; Parisi, G P

2008-01-01

In this paper, we report a survey of two of the large number of possible practical applications of the laser ablation performed by an ultra-short pulse laser, namely pulsed laser deposition (PLD) and fs/ns dual-pulse laser-induced breakdown spectroscopy (DP-LIBS). These applications differ from those using just longer pulsed lasers as a consequence of the distinctive characteristics of the plasma produced by ultra-short laser beams. The most important feature of this plasma is the large presence of particles with nanometric size which plays a fundamental role in both applications.

Laser aided direct metal deposition of Inconel 625 superalloy: Microstructural evolution and thermal stability

International Nuclear Information System (INIS)

Dinda, G.P.; Dasgupta, A.K.; Mazumder, J.

2009-01-01

Direct metal deposition technology is an emerging laser aided manufacturing technology based on a new additive manufacturing principle, which combines laser cladding with rapid prototyping into a solid freeform fabrication process that can be used to manufacture near net shape components from their CAD files. In the present study, direct metal deposition technology was successfully used to fabricate a series of samples of the Ni-based superalloy Inconel 625. A high power CO 2 laser was used to create a molten pool on the Inconel 625 substrate into which an Inconel 625 powder stream was delivered to create a 3D object. The structure and properties of the deposits were investigated using optical and scanning electron microscopy, X-ray diffraction and microhardness test. The microstructure has been found to be columnar dendritic in nature, which grew epitaxially from the substrate. The thermal stability of the dendritic morphology was investigated in the temperature range 800-1200 deg. C. These studies demonstrate that Inconel 625 is an attractive material for laser deposition as all samples produced in this study are free from relevant defects such as cracks, bonding error and porosity.

Laser aided direct metal deposition of Inconel 625 superalloy: Microstructural evolution and thermal stability

Energy Technology Data Exchange (ETDEWEB)

Dinda, G.P., E-mail: dindag@focushope.edu [Center for Advanced Technologies, Focus: HOPE, Detroit, MI 48238 (United States); Center for Laser Aided Intelligent Manufacturing, University of Michigan, Ann Arbor, MI 48109 (United States); Dasgupta, A.K. [Center for Advanced Technologies, Focus: HOPE, Detroit, MI 48238 (United States); Mazumder, J. [Center for Laser Aided Intelligent Manufacturing, University of Michigan, Ann Arbor, MI 48109 (United States)

2009-05-25

Direct metal deposition technology is an emerging laser aided manufacturing technology based on a new additive manufacturing principle, which combines laser cladding with rapid prototyping into a solid freeform fabrication process that can be used to manufacture near net shape components from their CAD files. In the present study, direct metal deposition technology was successfully used to fabricate a series of samples of the Ni-based superalloy Inconel 625. A high power CO{sub 2} laser was used to create a molten pool on the Inconel 625 substrate into which an Inconel 625 powder stream was delivered to create a 3D object. The structure and properties of the deposits were investigated using optical and scanning electron microscopy, X-ray diffraction and microhardness test. The microstructure has been found to be columnar dendritic in nature, which grew epitaxially from the substrate. The thermal stability of the dendritic morphology was investigated in the temperature range 800-1200 deg. C. These studies demonstrate that Inconel 625 is an attractive material for laser deposition as all samples produced in this study are free from relevant defects such as cracks, bonding error and porosity.

Thick film laser induced forward transfer for deposition of thermally and mechanically sensitive materials

International Nuclear Information System (INIS)

Kattamis, Nicholas T.; Purnick, Priscilla E.; Weiss, Ron; Arnold, Craig B.

2007-01-01

Laser forward transfer processes incorporating thin absorbing films can be used to deposit robust organic and inorganic materials but the deposition of more delicate materials has remained elusive due to contamination and stress induced during the transfer process. Here, we present the approach to high resolution patterning of sensitive materials by incorporating a thick film polymer absorbing layer that is able to dissipate shock energy through mechanical deformation. Multiple mechanisms for transfer as a function of incident laser energy are observed and we show viable and contamination-free deposition of living mammalian embryonic stem cells

Laser damage resistance of hafnia thin films deposited by electron beam deposition, reactive low voltage ion plating, and dual ion beam sputtering

International Nuclear Information System (INIS)

Gallais, Laurent; Capoulade, Jeremie; Natoli, Jean-Yves; Commandre, Mireille; Cathelinaud, Michel; Koc, Cian; Lequime, Michel

2008-01-01

A comparative study is made of the laser damage resistance of hafnia coatings deposited on fused silica substrates with different technologies: electron beam deposition (from Hf or HfO2 starting material), reactive low voltage ion plating, and dual ion beam sputtering.The laser damage thresholds of these coatings are determined at 1064 and 355 nm using a nanosecond pulsed YAG laser and a one-on-one test procedure. The results are associated with a complete characterization of the samples: refractive index n measured by spectrophotometry, extinction coefficient k measured by photothermal deflection, and roughness measured by atomic force microscopy

Pulsed laser deposition and characterization of multilayer metal-carbon thin films

Energy Technology Data Exchange (ETDEWEB)

Siraj, K., E-mail: khurram.uet@gmail.com [Advance Physics Laboratory, Department of Physics, University of Engineering and Technology, Lahore (Pakistan); Khaleeq-ur-Rahman, M.; Rafique, M.S.; Munawar, M.Z. [Advance Physics Laboratory, Department of Physics, University of Engineering and Technology, Lahore (Pakistan); Naseem, S.; Riaz, S. [Center for Solid State Physics, University of Punjab, Lahore (Pakistan)

2011-05-15

Cobalt-DLC multilayer films were deposited with increasing content of cobalt, keeping carbon content constant by pulsed laser deposition technique. A cobalt free carbon film was also deposited for comparison. Excimer laser was employed to ablate the materials onto silicon substrate, kept at 250 deg. C, while post-deposition annealing at 400 deg. C was also performed in situ. The formation of cobalt grains within the carbon matrix in Co-DLC films can be seen through scanning electron and atomic force micrographs while no grains on the surface of the cobalt-free DLC film were observed. Raman spectra of all the films show D- and G-bands, which is a confirmation that the films are DLC in nature. According to Vibrating sample magnetometer (VSM) measurements, the DLC films with cobalt revealed ferromagnetic behaviour whereas the cobalt free DLC film exhibited diamagnetic behaviour. The pure DLC film also shows ferromagnetic nature when diamagnetic background is subtracted. Spectroscopic Ellipsometry (SE) analysis showed that the optical band gaps, refractive indices and extinction coefficients of Co-DLC films can be effectively tuned with increasing content of cobalt.

Pulsed laser deposition and characterization of multilayer metal-carbon thin films

International Nuclear Information System (INIS)

Siraj, K.; Khaleeq-ur-Rahman, M.; Rafique, M.S.; Munawar, M.Z.; Naseem, S.; Riaz, S.

2011-01-01

Cobalt-DLC multilayer films were deposited with increasing content of cobalt, keeping carbon content constant by pulsed laser deposition technique. A cobalt free carbon film was also deposited for comparison. Excimer laser was employed to ablate the materials onto silicon substrate, kept at 250 deg. C, while post-deposition annealing at 400 deg. C was also performed in situ. The formation of cobalt grains within the carbon matrix in Co-DLC films can be seen through scanning electron and atomic force micrographs while no grains on the surface of the cobalt-free DLC film were observed. Raman spectra of all the films show D- and G-bands, which is a confirmation that the films are DLC in nature. According to Vibrating sample magnetometer (VSM) measurements, the DLC films with cobalt revealed ferromagnetic behaviour whereas the cobalt free DLC film exhibited diamagnetic behaviour. The pure DLC film also shows ferromagnetic nature when diamagnetic background is subtracted. Spectroscopic Ellipsometry (SE) analysis showed that the optical band gaps, refractive indices and extinction coefficients of Co-DLC films can be effectively tuned with increasing content of cobalt.

Effect of Laser Power and Gas Flow Rate on Properties of Directed Energy Deposition of Titanium Alloy

Science.gov (United States)

Mahamood, Rasheedat M.

2018-03-01

Laser metal deposition (LMD) process belongs to the directed energy deposition class of additive manufacturing processes. It is an important manufacturing technology with lots of potentials especially for the automobile and aerospace industries. The laser metal deposition process is fairly new, and the process is very sensitive to the processing parameters. There is a high level of interactions among these process parameters. The surface finish of part produced using the laser metal deposition process is dependent on the processing parameters. Also, the economy of the LMD process depends largely on steps taken to eliminate or reduce the need for secondary finishing operations. In this study, the influence of laser power and gas flow rate on the microstructure, microhardness and surface finish produced during the laser metal deposition of Ti6Al4V was investigated. The laser power was varied between 1.8 kW and 3.0 kW, while the gas flow rate was varied between 2 l/min and 4 l/min. The microstructure was studied under an optical microscope, the microhardness was studied using a Metkon microhardness indenter, while the surface roughness was studied using a Jenoptik stylus surface analyzer. The results showed that better surface finish was produced at a laser power of 3.0 kW and a gas flow rate of 4 l/min.

Pulverization of boron element and proportions of boron carbide in boron

International Nuclear Information System (INIS)

Lang, F.M.; Finck, C.

1956-01-01

It is possible to reduce boron element into fine powder by means of a mortar and pestle made of sintered boron carbide, the ratio of boron carbide introduced being less than one per cent. Boron element at our disposal is made of sharp edged, dark brown, little grains of average size greater than 5 μ. Grain sizes smaller than 1μ are required for applying thin layers of such boron. (author) [fr

Surface modification of biomaterials by pulsed laser ablation deposition and plasma/gamma polymerization

Science.gov (United States)

Rau, Kaustubh R.

Surface modification of stainless-steel was carried out by two different methods: pulsed laser ablation deposition (PLAD) and a combined plasma/gamma process. A potential application was the surface modification of endovascular stents, to enhance biocompatibility. The pulsed laser ablation deposition process, had not been previously reported for modifying stents and represented a unique and potentially important method for surface modification of biomaterials. Polydimethylsiloxane (PDMS) elatomer was studied using the PLAD technique. Cross- linked PDMS was deemed important because of its general use for biomedical implants and devices as well as in other fields. Furthermore, PDMS deposition using PLAD had not been previously studied and any information gained on its ablation characteristics could be important scientifically and technologically. The studies reported here showed that the deposited silicone film properties had a dependence on the laser energy density incident on the target. Smooth, hydrophobic, silicone-like films were deposited at low energy densities (100-150 mJ/cm2). At high energy densities (>200 mJ/cm2), the films had an higher oxygen content than PDMS, were hydrophilic and tended to show a more particulate morphology. It was also determined that (1)the deposited films were stable and extremely adherent to the substrate, (2)silicone deposition exhibited an `incubation effect' which led to the film properties changing with laser pulse number and (3)films deposited under high vacuum were similar to films deposited at low vacuum levels. The mechanical properties of the PLAD films were determined by nanomechanical measurements which are based on the Atomic Force Microscope (AFM). From these measurements, it was possible to determine the modulus of the films and also study their scratch resistance. Such measurement techniques represent a significant advance over current state-of-the-art thin film characterization methods. An empirical model for

Laser deposition of coatings for aeronautical and industrials turbine blades

Energy Technology Data Exchange (ETDEWEB)

Teleginski, V. [Instituto Federal de Sao Paulo (IFSP), SP (Brazil); Silva, S.A.; Riva, R.; Vasconcelos, G. [Instituto de Estudos Avancados (IEAv), Sao Jose dos Campos, SP (Brazil); Silva Pita, G.R. [Universidade Braz Cubas, Mogi das Cruzes, SP (Brazil); Yamin, L.S. [Escola Tecnica Everardo Passos (ETEP), Sao Jose dos Campos, DP (Brazil)

2016-07-01

Full text: Zirconium-based ceramic materials are widely employed as Thermal Barrier Coatings (TBC), due to its excellent wear and corrosion resistance at high temperatures. The application of TBC includes aeronautical and industrials turbine blades. The working conditions include oxidizing environments and temperatures above 1000°C. The zirconium-based ceramics are developed in such a way that the microstructural control is possible through the control of chemical composition, fabrication route and, thermal treatment. The present paper proposes a laser route to deposit the TBC coating, where the microstructural control is a function of power density and interaction time between the laser beam and the material. The main objective of this work is to study the influence of the CO2 laser beam (Synrad Evolution 125) parameters: power density and interaction time, on the deposition process of yttria-stabilized zirconia (YSZ) powders on NiCrAlY/AISI 316L substrates. The resulting coating surface and interface were characterized by scanning electron microscopy, energy dispersive spectroscopy and X-ray diffraction. The results indicate that is possible to match laser parameters of scanning speed and intensity to produce homogenous coatings. The X-Ray analyses show that the obtained ceramic coating has reduced number of phases, with prevalence of tetragonal phase.(author)

Boron mediation on the growth of Ge quantum dots on Si (1 0 0) by ultra high vacuum chemical vapor deposition system

International Nuclear Information System (INIS)

Chen, P.S.; Pei, Z.; Peng, Y.H.; Lee, S.W.; Tsai, M.-J.

2004-01-01

Self-assembled Ge quantum dots (QDs) with boron mediation are grown on Si (1 0 0) by an industrial hot wall ultra-high-vacuum chemical vapor deposition (UHV/CVD) system with different growth temperatures and dopant gas flow rates. Diborane (B 2 H 6 ) gas is applied as a surfactant on the Si (1 0 0) prior to the growth of Ge QDs. Small dome and pyramid shaped Ge QDs are observed after boron treatment as compared to the hut shaped Ge cluster without boron pre-treatment at 525 and 550 deg. C. The Ge QDs have a typical base width and height of about 30 and 6 nm, respectively, and the density is about 2.5x10 10 cm -2 for the growth temperature of 525 deg. C. Through weakening the Si-H bond during the epitaxy growth and changing the stress field on the surface of the Si (1 0 0) buffer, boron mediation can modify the growth mode of Ge QDs. When the growth temperature is low (525-550 deg. C), the former factor is dominate, as the growth temperature is raised (600 deg. C), the latter parameter may play an important role on the formation of Ge QDs. Optical transition from Ge QDs is demonstrated from photoluminescence (PL) spectra. Furthermore, multifold Ge/Si layers are also carried out to enhance the PL intensity with first Ge layer treated by B 2 H 6 and avoid the generation of threading dislocations

Multi-stage pulsed laser deposition of aluminum nitride at different temperatures

Energy Technology Data Exchange (ETDEWEB)

Duta, L. [National Institute for Lasers, Plasma, and Radiation Physics, 409 Atomistilor Street, 077125 Magurele (Romania); Stan, G.E. [National Institute of Materials Physics, 105 bis Atomistilor Street, 077125 Magurele (Romania); Stroescu, H.; Gartner, M.; Anastasescu, M. [Institute of Physical Chemistry “Ilie Murgulescu”, Romanian Academy, 202 Splaiul Independentei, 060021 Bucharest (Romania); Fogarassy, Zs. [Research Institute for Technical Physics and Materials Science, Hungarian Academy of Sciences, Konkoly Thege Miklos u. 29-33, H-1121 Budapest (Hungary); Mihailescu, N. [National Institute for Lasers, Plasma, and Radiation Physics, 409 Atomistilor Street, 077125 Magurele (Romania); Szekeres, A., E-mail: szekeres@issp.bas.bg [Institute of Solid State Physics, Bulgarian Academy of Sciences, Tzarigradsko Chaussee 72, Sofia 1784 (Bulgaria); Bakalova, S. [Institute of Solid State Physics, Bulgarian Academy of Sciences, Tzarigradsko Chaussee 72, Sofia 1784 (Bulgaria); Mihailescu, I.N., E-mail: ion.mihailescu@inflpr.ro [National Institute for Lasers, Plasma, and Radiation Physics, 409 Atomistilor Street, 077125 Magurele (Romania)

2016-06-30

Highlights: • Multi-stage pulsed laser deposition of aluminum nitride at different temperatures. • 800 °C seed film boosts the next growth of crystalline structures at lower temperature. • Two-stage deposited AlN samples exhibit randomly oriented wurtzite structures. • Band gap energy values increase with deposition temperature. • Correlation was observed between single- and multi-stage AlN films. - Abstract: We report on multi-stage pulsed laser deposition of aluminum nitride (AlN) on Si (1 0 0) wafers, at different temperatures. The first stage of deposition was carried out at 800 °C, the optimum temperature for AlN crystallization. In the second stage, the deposition was conducted at lower temperatures (room temperature, 350 °C or 450 °C), in ambient Nitrogen, at 0.1 Pa. The synthesized structures were analyzed by grazing incidence X-ray diffraction (GIXRD), transmission electron microscopy (TEM), atomic force microscopy and spectroscopic ellipsometry (SE). GIXRD measurements indicated that the two-stage deposited AlN samples exhibited a randomly oriented wurtzite structure with nanosized crystallites. The peaks were shifted to larger angles, indicative for smaller inter-planar distances. Remarkably, TEM images demonstrated that the high-temperature AlN “seed” layers (800 °C) promoted the growth of poly-crystalline AlN structures at lower deposition temperatures. When increasing the deposition temperature, the surface roughness of the samples exhibited values in the range of 0.4–2.3 nm. SE analyses showed structures which yield band gap values within the range of 4.0–5.7 eV. A correlation between the results of single- and multi-stage AlN depositions was observed.

Influence of laser pulse frequency on the microstructure of aluminum nitride thin films synthesized by pulsed laser deposition

Energy Technology Data Exchange (ETDEWEB)

Antonova, K., E-mail: krasa@issp.bas.bg [Institute of Solid State Physics, Bulgarian Academy of Sciences, Tzarigradsko Chaussee 72, Sofia 1784 (Bulgaria); Duta, L. [National Institute for Lasers, Plasma, and Radiation Physics, 409 Atomistilor Street, 077125 Magurele (Romania); Szekeres, A. [Institute of Solid State Physics, Bulgarian Academy of Sciences, Tzarigradsko Chaussee 72, Sofia 1784 (Bulgaria); Stan, G.E. [National Institute of Materials Physics, 105 bis Atomistilor Street, 077125 Magurele (Romania); Mihailescu, I.N. [National Institute for Lasers, Plasma, and Radiation Physics, 409 Atomistilor Street, 077125 Magurele (Romania); Anastasescu, M.; Stroescu, H.; Gartner, M. [Institute of Physical Chemistry, “Ilie Murgulescu”, Romanian Academy, 202 Splaiul Independentei, 060021 Bucharest (Romania)

2017-02-01

Highlights: • Study of pulsed laser deposited AlN films at different laser pulse frequencies. • Higher laser pulse frequency promotes nanocrystallites formation at temperature 450 °C. • AFM and GIXRD detect randomly oriented wurtzite AlN structures. • Characterization of the nanocrystallites’ orientation by FTIR reflectance spectra. • Berreman effect is registered in p-polarised radiation at large incidence angles. - Abstract: Aluminum Nitride (AlN) thin films were synthesized on Si (100) wafers at 450 °C by pulsed laser deposition. A polycrystalline AlN target was multipulsed irradiated in a nitrogen ambient, at different laser pulse repetition rate. Grazing Incidence X-Ray Diffraction and Atomic Force Microscopy analyses evidenced nanocrystallites with a hexagonal lattice in the amorphous AlN matrix. The thickness and optical constants of the layers were determined by infrared spectroscopic ellipsometry. The optical properties were studied by Fourier Transform Infrared reflectance spectroscopy in polarised oblique incidence radiation. Berreman effect was observed around the longitudinal phonon modes of the crystalline AlN component. Angular dependence of the A{sub 1}LO mode frequency was analysed and connected to the orientation of the particles’ optical axis to the substrate surface normal. The role of the laser pulse frequency on the layers’ properties is discussed on this basis.

Structure and reactivity of boron-ate complexes derived from primary and secondary boronic esters.

Science.gov (United States)

Feeney, Kathryn; Berionni, Guillaume; Mayr, Herbert; Aggarwal, Varinder K

2015-06-05

Boron-ate complexes derived from primary and secondary boronic esters and aryllithiums have been isolated, and the kinetics of their reactions with carbenium ions studied. The second-order rate constants have been used to derive nucleophilicity parameters for the boron-ate complexes, revealing that nucleophilicity increased with (i) electron-donating aromatics on boron, (ii) neopentyl glycol over pinacol boronic esters, and (iii) 12-crown-4 ether.

Boron-enhanced diffusion in excimer laser annealed Si

International Nuclear Information System (INIS)

Monakhov, E.V.; Svensson, B.G.; Linnarsson, M.K.; La Magna, A.; Privitera, V.; Fortunato, G.; Mariucci, L.

2004-01-01

The effect of excimer laser annealing (ELA) and rapid thermal annealing (RTA) on B redistribution in B-implanted Si has been studied by secondary ion mass spectrometry (SIMS) and spreading resistance probe (SRP). B has been implanted with an energy of 1 keV and a dose of 10 16 cm -2 forming a distribution with a width of 20-30 nm and a peak concentration of ∼5 x 10 21 cm -3 . It has been found that ELA with 10 pulses of the energy density of 850 mJ/cm 2 results in a uniform B distribution over the ELA-molten region with an abrupt profile edge. SRP measurements demonstrate good activation of the implanted B after ELA, with the concentration of the activated fraction (∼10 21 cm -3 ) exceeding the solid solubility level. RTA (30 s at 1100 deg. C) of the as-implanted and ELA-treated samples leads to a diffusion of B with diffusivities exceeding the equilibrium one and the enhancement is similar for both of the samples. It is also found that RTA decreases the activated B in the ELA-treated sample to the solid solubility limit (2 x 10 20 cm -3 ). The similarity of the B diffusivity for the as-implanted and ELA-treated samples suggests that the enhancement of the B diffusivity is due to the so-called boron-enhanced diffusion (BED). Possible mechanisms of BED are discussed

Microstructure of pulsed-laser deposited PZT on polished and annealed MGO substrates

NARCIS (Netherlands)

King, S.L.; Coccia, L.G.; Gardeniers, Johannes G.E.; Boyd, I.W.

1996-01-01

Thin films of Lead-Zirconate-Titanate (PZT) have been grown by pulsed-laser-deposition (PLD) onto polished MgO substrates both with and without pre-annealing. The surface morphology of polished MgO substrates, which are widely used for deposition, is examined by AFM. Commercially available,

Modeling the energy deposition in the Aurora KrF laser amplifier chain

International Nuclear Information System (INIS)

Comly, J.C.; Czuchlewski, S.J.; Greene, D.P.; Hanson, D.E.; Krohn, B.J.; McCown, A.W.

1988-01-01

Monte Carlo calculations model the energy depositions by highly energetic electron beams into the cavities of the four KrF laser amplifiers in the Aurora chain. Deposited energy density distributions are presented and studied as functions of e-beam energy and gas pressure. Results are useful for analyzing small signal gain (SSG) measurements and optimizing deposition in future experiments. 7 refs., 7 figs., 1 tab

Parameters of nanodimensional aluminium films deposited by the laser method in vacuum

International Nuclear Information System (INIS)

Gusakov, G.A.; Ismailov, D.R.; Puzyrev, M.V.

2011-01-01

The investigation of the thickness and structure of a aluminium films surface produced by the laser-plasma deposition has been carried out. The dependence of a film thickness from laser radiation intensity has been determined. Threshold intensity has been determined when an evaporation of a target material begins. (authors)

Local electrophoresis deposition assisted by laser trapping coupled with a spatial light modulator for three-dimensional microfabrication

Science.gov (United States)

Matsuura, Toshiki; Takai, Takanari; Iwata, Futoshi

2017-10-01

We describe a novel three-dimensional fabrication technique using local electrophoresis deposition assisted by laser trapping coupled with a spatial light modulator (SLM). In a solution containing nanometer-scale colloidal Au particles, multiple laser spots formed on a conductive substrate by the SLM gathered the nanoparticles together, and then the nanoparticles were electrophoretically deposited onto the substrate by an applied electrical field. However, undesirable sub-spots often appeared due to optical interference from the multiple laser spots, which deteriorated the accuracy of the deposition. To avoid the appearance of undesirable sub-spots, we proposed a method using quasi-multiple spots, which we realized by switching the position of a single spot briefly using the SLM. The method allowed us to deposit multiple dots on the substrate without undesirable sub-dot deposition. By moving the substrate downward during deposition, multiple micro-pillar structures could be fabricated. As a fabrication property, the dependence of the pillar diameter on laser intensity was investigated by changing the number of laser spots. The smallest diameter of the four pillars fabricated in this study was 920 nm at the laser intensity of 2.5 mW. To demonstrate the effectiveness of the method, multiple spiral structures were fabricated. Quadruple spirals of 46 µm in height were successfully fabricated with a growth rate of 0.21 µm/s using 2200 frames of the CGH patterns displayed in the SLM at a frame rate of 10 fps.

Direct Patterning of Oxides by Pulsed Laser Stencil Deposition

NARCIS (Netherlands)

te Riele, P.M.

2008-01-01

This thesis describes a detailed study of the application of stencil technology in the patterning of epitaxial oxide thin films by pulsed laser deposition (PLD). Stencil patterning has been applied in thin film sub-micron patterning of metals successfully for decades since it has several advantages

Low-temperature processed ZnO and CdS photodetectors deposited by pulsed laser deposition

International Nuclear Information System (INIS)

Hernandez-Como, N; Moreno, S; Mejia, I; Quevedo-Lopez, M A

2014-01-01

UV-VIS photodetectors using an interdigital configuration, with zinc oxide (ZnO) and cadmium sulfide (CdS) semiconductors deposited by pulsed laser deposition, were fabricated with a maximum processing temperature of 100 °C. Without any further post-growth annealing, the photodetectors are compatible with flexible and transparent substrates. Aluminum (Al) and indium tin oxide (ITO) were investigated as contacts. Focusing on underwater communications, the impact of metal contact (ITO versus Al) was investigated to determine the maximum responsivity using a laser with a 405 nm wavelength. As expected, the responsivity increases for reduced metal finger separation. This is a consequence of reduced carrier transit time for shorter finger separation. For ITO, the highest responsivities for both films (ZnO and CdS) were ∼3 A W −1 at 5 V. On the other hand, for Al contacts, the maximum responsivities at 5 V were ∼0.1 A W −1 and 0.7 A W −1 for CdS and ZnO, respectively. (paper)

Material efficiency of laser metal deposited Ti6Al4V: Effect of laser power

CSIR Research Space (South Africa)

Mahamood, RM

2013-02-01

Full Text Available The economy of using Laser Metal Deposition (LMD) process in the manufacturing of aerospace parts depends on the right processing parameters. LMD is an additive manufacturing technology capable of producing complex parts directly from the CAD model...

The corrosion resistance of zinc coatings in the presence of boron-doped detonation nanodiamonds (DND)

Science.gov (United States)

Burkat, G. K.; Alexandrova, G. S.; Dolmatov, V. Yu; Osmanova, E. D.; Myllymäki, V.; Vehanen, A.

2017-02-01

The effect of detonation nanodiamonds, doped with boron (boron-DND) in detonation synthesis on the process of zinc electrochemical deposition from zincate electrolyte is investigated. It is shown that the scattering power (coating uniformity) increases 2-4 times (depending on the concentration of DND-boron electrolyte conductivity does not change, the corrosion resistance of Zn- DND -boron coating increases 2.6 times in 3% NaCl solution (corrosion currents) and 3 times in the climatic chamber.

Pure and Sn-doped ZnO films produced by pulsed laser deposition

DEFF Research Database (Denmark)

Holmelund, E.; Schou, Jørgen; Tougaard, S.

2002-01-01

A new technique, metronome doping, has been used for doping of films during pulsed laser deposition (PLD). This technique makes it possible to dope continuously during film growth with different concentrations of a dopant in one deposition sequence. Films of pure and doped ZnO have been produced...

Laser ablation studies of Deposited Silver Colloids Active in SERS

International Nuclear Information System (INIS)

La Porte, R.T.; Moreno, D.S.; Striano, M.C.; Munnoz, M.M.; Garcia-Ramos, J.V.; Cortes, S.S.; Koudoumas, E.

2002-01-01

Laser ablation of deposited silver colloids, active in SERS, is carried out at three different laser wavelengths (KrF, XeCl and Nd:YAG at λ = 248, 308 and 532 nm respectively). Emission form excited neutral Ag and Na atoms, present in the ablation plume, is detected with spectral and temporal resolution. The expansion velocity of Ag in the plume is estimated in ∼1x104m s-1, Low-fluence laser ablation of the colloids yields ionized species that are analyzed by time-of-flight mass spectroscopy. Na+ and Agn+(n≤3) are observed. Composition of the mass spectra and widths of the mass peaks are found to be dependent on laser wavelength, suggesting that the dominant ablation mechanisms are different at the different wavelenghts.

Emitting recombination of BCl molecules with chlorine atoms, resulting from dissociation of boron trichloride molecules under action of pulse CO2-laser radiation

International Nuclear Information System (INIS)

Nikonorov, A.P.; Moskvitina, E.N.; Kuzyakov, Yu.Ya.; Stepanov, P.I.

1983-01-01

Luminescence in BCl 3 is investigated. The results of measurements of gas temperature, BCl molecules concentration, and luminescence absolute intensity at boron trichloride presure of 40 mm pH and density of laser pulse energy from 1.7 up to 4.0 J/cm 2 are obtained. Nature of uninterrupted spectrum is considered. It is established that luminescence appearing in the BCl 3 under action of pulse CO 2 -laser is caused by reaction of emitting recombination of BCl molecules with chlorine atoms. Rate constant of this reaction in the range of 2300-3100 K is determined

Regularly arranged indium islands on glass/molybdenum substrates upon femtosecond laser and physical vapor deposition processing

Energy Technology Data Exchange (ETDEWEB)

Ringleb, F.; Eylers, K.; Teubner, Th.; Boeck, T., E-mail: torsten.boeck@ikz-berlin.de [Leibniz-Institute for Crystal Growth, Max-Born-Straße 2, Berlin 12489 (Germany); Symietz, C.; Bonse, J.; Andree, S.; Krüger, J. [Bundesanstalt für Materialforschung und-prüfung (BAM), Unter den Eichen 87, Berlin 12205 (Germany); Heidmann, B.; Schmid, M. [Department of Physics, Freie Universität Berlin, Arnimalle 14, Berlin 14195 (Germany); Nanooptical Concepts for PV, Helmholtz Zentrum Berlin, Hahn-Meitner-Platz 1, Berlin 14109 (Germany); Lux-Steiner, M. [Nanooptical Concepts for PV, Helmholtz Zentrum Berlin, Hahn-Meitner-Platz 1, Berlin 14109 (Germany); Heterogeneous Material Systems, Helmholtz Zentrum Berlin, Hahn-Meitner-Platz 1, Berlin 14109 (Germany)

2016-03-14

A bottom-up approach is presented for the production of arrays of indium islands on a molybdenum layer on glass, which can serve as micro-sized precursors for indium compounds such as copper-indium-gallium-diselenide used in photovoltaics. Femtosecond laser ablation of glass and a subsequent deposition of a molybdenum film or direct laser processing of the molybdenum film both allow the preferential nucleation and growth of indium islands at the predefined locations in a following indium-based physical vapor deposition (PVD) process. A proper choice of laser and deposition parameters ensures the controlled growth of indium islands exclusively at the laser ablated spots. Based on a statistical analysis, these results are compared to the non-structured molybdenum surface, leading to randomly grown indium islands after PVD.

Laser deposition and analysis of biocompatible ceramic films - experiences andoverview

Czech Academy of Sciences Publication Activity Database

Jelínek, Miroslav; Dostálová, T.; Fotakis, C.; Studnička, Václav; Jastrabík, Lubomír; Havránek, V.; Grivas, C.; Pospíchal, M.; Kadlec, J.; Peřina, Vratislav

1996-01-01

Roč. 6, č. 1 (1996), s. 144-149 ISSN 1054-660X Institutional research plan: CEZ:A02/98:Z1-010-914 Keywords : laser deposition * hydroxyapatite * ceramic films Subject RIV: BM - Solid Matter Physics ; Magnetism

Optical and mechanical properties of nanocrystalline ZrC thin films grown by pulsed laser deposition

Energy Technology Data Exchange (ETDEWEB)

Craciun, D., E-mail: doina.craciun@inflpr.ro [Laser Department, National Institute for Laser, Plasma, and Radiation Physics, Magurele (Romania); Socol, G. [Laser Department, National Institute for Laser, Plasma, and Radiation Physics, Magurele (Romania); Lambers, E. [Major Analytical Instrumentation Center, College of Engineering, University of Florida, Gainesville, FL 32611 (United States); McCumiskey, E.J.; Taylor, C.R. [Mechanical and Aerospace Engineering, University of Florida, Gainesville, FL 32611 (United States); Martin, C. [Ramapo College of New Jersey (United States); Argibay, N. [Materials Science and Engineering Center, Sandia National Laboratories, Albuquerque, NM 87123 (United States); Tanner, D.B. [Physics Department, University of Florida, Gainesville, FL 32611 (United States); Craciun, V. [Laser Department, National Institute for Laser, Plasma, and Radiation Physics, Magurele (Romania)

2015-10-15

Highlights: • Nanocrystalline ZrC thin film were grown on Si by pulsed laser deposition technique. • Structural properties weakly depend on the CH{sub 4} pressure used during deposition. • The optimum deposition pressure for low resistivity is around 2 × 10{sup −5} mbar CH{sub 4}. • ZrC films exhibited friction coefficients around 0.4 and low wear rates. - Abstract: Thin ZrC films (<500 nm) were grown on (100) Si substrates at a substrate temperature of 500 °C by the pulsed laser deposition (PLD) technique using a KrF excimer laser under different CH{sub 4} pressures. Glancing incidence X-ray diffraction showed that films were nanocrystalline, while X-ray reflectivity studies found out films were very dense and exhibited a smooth surface morphology. Optical spectroscopy data shows that the films have high reflectivity (>90%) in the infrared region, characteristic of metallic behavior. Nanoindentation results indicated that films deposited under lower CH{sub 4} pressures exhibited slightly higher nanohardness and Young modulus values than films deposited under higher pressures. Tribological characterization revealed that these films exhibited relatively high wear resistance and steady-state friction coefficients on the order of μ = 0.4.

Residual heat deposition in dental enamel during IR laser ablation at 2.79, 2.94, 9.6, and 10.6 microm.

Science.gov (United States)

Fried, D; Ragadio, J; Champion, A

2001-01-01

The principal factor limiting the rate of laser ablation of dental hard tissue is the risk of excessive heat accumulation in the tooth. Excessive heat deposition or accumulation may result in unacceptable damage to the pulp. The objective of this study was to measure the residual heat deposition during the laser ablation of dental enamel at those IR laser wavelengths well suited for the removal of dental caries. Optimal laser ablation systems minimize the residual heat deposition in the tooth by efficiently transferring the deposited laser energy to kinetic and internal energy of ejected tissue components. The residual heat deposition in dental enamel was measured at laser wavelengths of 2.79, 2.94, 9.6, and 10.6 microm and pulse widths of 150 nsec -150 microsec using bovine block "calorimeters." Water droplets were applied to the surface before ablation with 150 microsec Er:YAG laser pulses to determine the influence of an optically thick water layer on reducing heat deposition. The residual heat was at a minimum for fluences well above the ablation threshold where measured values ranged from 25-70% depending on pulse duration and wavelength for the systems investigated. The lowest values of the residual heat were measured for short (heat deposition during ablation with 150 microsec Er:YAG laser pulses. Residual heat deposition can be markedly reduced by using CO(2) laser pulses of less than 20 microsec duration and shorter Q-switched Er:YAG and Er:YSGG laser pulses for enamel ablation. Copyright 2001 Wiley-Liss, Inc.

Chemical and boron isotopic composition of tourmaline from the Mariinsky emerald deposit, Central Urals, Russia

Science.gov (United States)

Baksheev, Ivan A.; Trumbull, Robert B.; Popov, Mikhail P.; Erokhin, Yuri V.; Kudryavtseva, Olesya E.; Yapaskurt, Vasily O.; Khiller, Vera V.; Vovna, Galina M.; Kiselev, Vladimir I.

2018-04-01

Tourmaline is abundant at the Mariinsky schist-hosted emerald deposit in the Central Urals, Russia, both in emerald-bearing phlogopite veins (type 1) and later, emerald-free pockets, lenses, and veinlets cutting the phlogopite veins (type 2). The Ca content in tourmaline is influenced by the host rocks (ultramafic and mafic rocks), associated minerals, and minerals crystallized before tourmaline (amphibole, fluorite, margarite). The Na concentration in tourmaline depends on the presence or absence of paragonite, and the association with micas also strongly influences the contents of Li, Zn, Ni, and Co in tourmaline. Type 1 tourmalines associated with phlogopite are relatively depleted in these elements, whereas type 2 tourmalines associated with margarite or paragonite are enriched. Some differences in isomorphic substitutions along with the trace element composition (Zn, V, Sr, Co, REE) may have value in exploration of emerald-bearing and emerald-free veins in schist-hosted emerald deposits. The δ11B values in tourmaline of all types fall in a narrow total range from -11.3 to -8.4‰. These values, combined with a mineralization temperature of 420-360 °C, yield an estimated δ11B fluid composition of -7.4 to -6.8‰ suggesting a mixed source of boron, likely dominated from the granitic rocks surrounding the emerald belt. The narrow range of B-isotope compositions in tourmaline from throughout the Mariinsky deposit suggests a well-mixed hydrothermal system.

Pulsed-laser deposition and growth studies of Bi3Fe5O12 thin films

International Nuclear Information System (INIS)

Lux, Robert; Heinrich, Andreas; Leitenmeier, Stephan; Koerner, Timo; Herbort, Michael; Stritzker, Bernd

2006-01-01

Magneto-optical garnets are attractive because of their high Faraday rotation and low optical loss in the near infrared. Therefore their use is generally in nonreciprocal devices, i.e., as optical isolators in optical communication. In this paper we present data concerning the deposition of Bi 3 Fe 5 O 12 (BIG) thin films on (100) and (111) Gd 3 Ga 5 O 12 substrates using pulsed-laser deposition. Laser-induced processes on the surface of the oxide target used for ablation were analyzed and numerous films were deposited. We found the BIG film quality to be strongly affected by oxygen pressure, laser energy density, and the Bi/Fe film ratio, whereas temperature had a minor influence. We also investigated the BIG-film deposition using a target pressed from metallic Bi and Fe powders and found information on the growth behavior of BIG. We report on details of the film deposition and film properties determined by environmental scanning electron microscopy, energy dispersive x-ray analysis, Rutherford backscattering spectroscopy, and x-ray diffraction. In addition, we determined the Faraday rotation of the films

Evaluation of Aluminum-Boron Carbide Neutron Absorbing Materials for Interim Storage of Used Nuclear Fuel

International Nuclear Information System (INIS)

Wang, Lumin; Wierschke, Jonathan Brett

2015-01-01

The objective of this work was to understand the corrosion behavior of Boral® and Bortec® neutron absorbers over long-term deployment in a used nuclear fuel dry cask storage environment. Corrosion effects were accelerated by flowing humidified argon through an autoclave at temperatures up to 570°C. Test results show little corrosion of the aluminum matrix but that boron is leaching out of the samples. Initial tests performed at 400 and 570°C were hampered by reduced flow caused by the rapid build-up of solid deposits in the outlet lines. Analysis of the deposits by XRD shows that the deposits are comprised of boron trioxide and sassolite (H 3 BO 3 ). The collection of boron- containing compounds in the outlet lines indicated that boron was being released from the samples. Observation of the exposed samples using SEM and optical microscopy show the growth of new phases in the samples. These phases were most prominent in Bortec® samples exposed at 570°C. Samples of Boral® exposed at 570°C showed minimal new phase formation but showed nearly the complete loss of boron carbide particles. Boron carbide loss was also significant in Boral samples at 400°C. However, at 400°C phases similar to those found in Bortec® were observed. The rapid loss of the boron carbide particles in the Boral® is suspected to inhibit the formation of the new secondary phases. However, Material samples in an actual dry cask environment would be exposed to temperatures closer to 300°C and less water than the lowest test. The results from this study conclude that at the temperature and humidity levels present in a dry cask environment, corrosion and boron leaching will have no effect on the performance of Boral® and Bortec® to maintain criticality control.

Deposition of Y thin films by nanosecond UV pulsed laser ablation for photocathode application

International Nuclear Information System (INIS)

Lorusso, A.; Anni, M.; Caricato, A.P.; Gontad, F.; Perulli, A.; Taurino, A.; Perrone, A.; Chiadroni, E.

2016-01-01

In this work, yttrium (Y) thin films have been deposited on Si (100) substrates by the pulsed laser deposition technique. Ex-situ morphological, structural and optical characterisations of such films have been performed by scanning electron microscopy, X-ray diffractometry, atomic force microscopy and ellipsometry. Polycrystalline films with a thickness of 1.2 μm, homogenous with a root mean square roughness of about 2 nm, were obtained by optimised laser irradiation conditions. Despite the relatively high thickness, the films resulted very adherent to the substrates. The high quality of such thin films is important to the synthesis of metallic photocathodes based on Y thin film, which could be used as electron sources of high photoemission performance in radio-frequency guns. - Highlights: • Pulsed laser deposition of Yttrium thin films is investigated. • 1.2 μm thick films were deposited with very low RMS roughness. • The Y thin films were very adherent to the Si substrate • Optical characterisation showed a very high absorption coefficient for the films.

Deposition of Y thin films by nanosecond UV pulsed laser ablation for photocathode application

Energy Technology Data Exchange (ETDEWEB)

Lorusso, A. [Università del Salento, Dipartimento di Matematica e Fisica “E. De Giorgi”, 73100 Lecce (Italy); Istituto Nazionale di Fisica Nucleare-Lecce, 73100 Lecce (Italy); Anni, M. [Università del Salento, Dipartimento di Matematica e Fisica “E. De Giorgi”, 73100 Lecce (Italy); Caricato, A.P. [Università del Salento, Dipartimento di Matematica e Fisica “E. De Giorgi”, 73100 Lecce (Italy); Istituto Nazionale di Fisica Nucleare-Lecce, 73100 Lecce (Italy); Gontad, F., E-mail: francisco.gontad@le.infn.it [Università del Salento, Dipartimento di Matematica e Fisica “E. De Giorgi”, 73100 Lecce (Italy); Istituto Nazionale di Fisica Nucleare-Lecce, 73100 Lecce (Italy); Perulli, A. [Università del Salento, Dipartimento di Matematica e Fisica “E. De Giorgi”, 73100 Lecce (Italy); Taurino, A. [National Research Council, Institute for Microelectronics & Microsystems, 73100 Lecce (Italy); Perrone, A. [Università del Salento, Dipartimento di Matematica e Fisica “E. De Giorgi”, 73100 Lecce (Italy); Istituto Nazionale di Fisica Nucleare-Lecce, 73100 Lecce (Italy); Chiadroni, E. [Laboratori Nazionali di Frascati, Istituto Nazionale di Fisica Nucleare, 00044 Frascati (Italy)

2016-03-31

In this work, yttrium (Y) thin films have been deposited on Si (100) substrates by the pulsed laser deposition technique. Ex-situ morphological, structural and optical characterisations of such films have been performed by scanning electron microscopy, X-ray diffractometry, atomic force microscopy and ellipsometry. Polycrystalline films with a thickness of 1.2 μm, homogenous with a root mean square roughness of about 2 nm, were obtained by optimised laser irradiation conditions. Despite the relatively high thickness, the films resulted very adherent to the substrates. The high quality of such thin films is important to the synthesis of metallic photocathodes based on Y thin film, which could be used as electron sources of high photoemission performance in radio-frequency guns. - Highlights: • Pulsed laser deposition of Yttrium thin films is investigated. • 1.2 μm thick films were deposited with very low RMS roughness. • The Y thin films were very adherent to the Si substrate • Optical characterisation showed a very high absorption coefficient for the films.

Characterization of diamond thin films deposited by a CO{sub 2} laser-assisted combustion-flame method

Energy Technology Data Exchange (ETDEWEB)

McKindra, Travis, E-mail: mckindra@mst.edu [Department of Materials Science and Engineering, Missouri University of Science and Technology, Rolla, MO 65409 (United States); O' Keefe, Matthew J. [Department of Materials Science and Engineering, Missouri University of Science and Technology, Rolla, MO 65409 (United States); Xie Zhiqiang; Lu Yongfeng [Department of Electrical Engineering, University of Nebraska-Lincoln, Lincoln, NE 68588 (United States)

2010-06-15

Diamond thin films were deposited by a CO{sub 2} laser-assisted O{sub 2}/C{sub 2}H{sub 2}/C{sub 2}H{sub 4} combustion-flame process. The effect of the deposition parameters, in particular the laser wavelength and power, on the film surface morphology, microstructure and phases present was the primary focus of the work. The laser power was set at 100, 400 and 800 W while the wavelength was varied and set at 10.591 {mu}m in the untuned condition and set at 10.532 {mu}m to resonantly match the CH{sub 2}-wagging vibrational mode of the C{sub 2}H{sub 4} molecule when in the tuned condition. When the laser was coupled to the combustion flame during deposition the diamond film growth was enhanced as the lateral grain size increased from 1 {mu}m to greater than 5 {mu}m. The greatest increase in grain size occurred when the wavelength was in the tuned condition. Scanning transmission electron microscopy images from focused-ion beam cross-sectioned samples revealed a sub-layer of smaller grains less than 1 {mu}m in size near the substrate surface at the lower laser powers and untuned wavelength. X-ray diffraction results showed a more intense Diamond (111) peak as the laser power increased from 100 to 800 W for the films deposited with the tuned laser wavelength. Micro-Raman spectra showed a diamond peak nearly twice as intense from the films with the tuned laser wavelength.

Organic/hybrid thin films deposited by matrix-assisted pulsed laser evaporation (MAPLE)

Science.gov (United States)

Stiff-Roberts, Adrienne D.; Ge, Wangyao

2017-12-01

Some of the most exciting materials research in the 21st century attempts to resolve the challenge of simulating, synthesizing, and characterizing new materials with unique properties designed from first principles. Achievements in such development for organic and organic-inorganic hybrid materials make them important options for electronic and/or photonic devices because they can impart multi-functionality, flexibility, transparency, and sustainability to emerging systems, such as wearable electronics. Functional organic materials include small molecules, oligomers, and polymers, while hybrid materials include inorganic nanomaterials (such as zero-dimensional quantum dots, one-dimensional carbon nanotubes, or two-dimensional nanosheets) combined with organic matrices. A critically important step to implementing new electronic and photonic devices using such materials is the processing of thin films. While solution-based processing is the most common laboratory technique for organic and hybrid materials, vacuum-based deposition has been critical to the commercialization of organic light emitting diodes based on small molecules, for example. Therefore, it is desirable to explore vacuum-based deposition of organic and hybrid materials that include larger macromolecules, such as polymers. This review article motivates the need for physical vapor deposition of polymeric and hybrid thin films using matrix-assisted pulsed laser evaporation (MAPLE), which is a type of pulsed laser deposition. This review describes the development of variations in the MAPLE technique, discusses the current understanding of laser-target interactions and growth mechanisms for different MAPLE variations, surveys demonstrations of MAPLE-deposited organic and hybrid materials for electronic and photonic devices, and provides a future outlook for the technique.

Effect of the Die Temperature and Blank Thickness on the Formability of a Laser-Welded Blank of a Boron Steel Sheet with Removing Al-Si Coating Layer

Directory of Open Access Journals (Sweden)

M. S. Lee

2014-05-01

Full Text Available Reducing carbon emissions has been a major focus in the automobile industry to address various environmental issues. In particular, studies on parts comprised of high strength sheets and light car bodies are ongoing. Accordingly, this study examined the use of boron steel, which is commonly used in high strength sheets. Boron steel is a type of sheet used for hot stamping parts. Although it has high strength, the elongation is inferior, which reduces its crash energy absorption capacity. To solve this problem, two sheets of different thickness were welded so the thin sheet would absorb crash energy and the thick sheet would work as a support. Boron steel, however, may show weakening at the welding spot due to the Al-Si coating layer used to prevent oxidation from occurring during the welding process. Therefore, a certain part of the coating layer of a double-thickness boron steel sheet that is welded in the hot stamping process is removed through laser ablation, and the formability of the hot-work was examined.

Pulsed laser deposition of antimicrobial silver coating on Ormocer (registered) microneedles

Energy Technology Data Exchange (ETDEWEB)

Gittard, S D; Narayan, R J; Jin, C; Monteiro-Riviere, N A [Joint Department of Biomedical Engineering, North Carolina State University, Raleigh, NC 27695 (United States); Ovsianikov, A; Chichkov, B N [Laser Zentrum Hannover, Hollerithallee 8, 30419 Hannover (Germany); Stafslien, S; Chisholm, B, E-mail: roger_narayan@msn.co [Center for Nanoscale Science and Engineering, North Dakota State University, 1805 Research Park Drive, Fargo, ND 58102 (United States)

2009-12-15

One promising option for transdermal delivery of protein- and nucleic acid-based pharmacologic agents involves the use of microneedles. However, microneedle-generated pores may allow microorganisms to penetrate the stratum corneum layer of the epidermis and cause local or systemic infection. In this study, microneedles with antimicrobial functionality were fabricated using two-photon polymerization-micromolding and pulsed laser deposition. The antibacterial activity of the silver-coated organically modified ceramic (Ormocer (registered) ) microneedles was demonstrated using an agar diffusion assay. Human epidermal keratinocyte viability on the Ormocer (registered) surfaces coated with silver was similar to that on uncoated Ormocer (registered) surfaces. This study indicates that coating microneedles with silver thin films using pulsed laser deposition is a useful and novel approach for creating microneedles with antimicrobial functionality. (communication)

Pulsed laser deposition of antimicrobial silver coating on Ormocer (registered) microneedles

International Nuclear Information System (INIS)

Gittard, S D; Narayan, R J; Jin, C; Monteiro-Riviere, N A; Ovsianikov, A; Chichkov, B N; Stafslien, S; Chisholm, B

2009-01-01

One promising option for transdermal delivery of protein- and nucleic acid-based pharmacologic agents involves the use of microneedles. However, microneedle-generated pores may allow microorganisms to penetrate the stratum corneum layer of the epidermis and cause local or systemic infection. In this study, microneedles with antimicrobial functionality were fabricated using two-photon polymerization-micromolding and pulsed laser deposition. The antibacterial activity of the silver-coated organically modified ceramic (Ormocer (registered) ) microneedles was demonstrated using an agar diffusion assay. Human epidermal keratinocyte viability on the Ormocer (registered) surfaces coated with silver was similar to that on uncoated Ormocer (registered) surfaces. This study indicates that coating microneedles with silver thin films using pulsed laser deposition is a useful and novel approach for creating microneedles with antimicrobial functionality. (communication)

SiC.sub.x./sub. layers prepared by hybrid laser deposition and PLD

Czech Academy of Sciences Publication Activity Database

Jelínek, Miroslav; Kocourek, Tomáš; Zemek, Josef; Kadlec, J.

2009-01-01

Roč. 6, S1 (2009), s. 5366-5369 ISSN 1612-8850 Institutional research plan: CEZ:AV0Z10100521 Keywords : SiC * composites * hybrid deposition * puls laser deposition * magnetron Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 4.037, year: 2009

Crystallization kinetics of GeTe phase-change thin films grown by pulsed laser deposition

Science.gov (United States)

Sun, Xinxing; Thelander, Erik; Gerlach, Jürgen W.; Decker, Ulrich; Rauschenbach, Bernd

2015-07-01

Pulsed laser deposition was employed to the growth of GeTe thin films on Silicon substrates. X-ray diffraction measurements reveal that the critical crystallization temperature lies between 220 and 240 °C. Differential scanning calorimetry was used to investigate the crystallization kinetics of the as-deposited films, determining the activation energy to be 3.14 eV. Optical reflectivity and in situ resistance measurements exhibited a high reflectivity contrast of ~21% and 3-4 orders of magnitude drop in resistivity of the films upon crystallization. The results show that pulsed laser deposited GeTe films can be a promising candidate for phase-change applications.

Crystallization kinetics of GeTe phase-change thin films grown by pulsed laser deposition

International Nuclear Information System (INIS)

Sun, Xinxing; Thelander, Erik; Gerlach, Jürgen W; Decker, Ulrich; Rauschenbach, Bernd

2015-01-01

Pulsed laser deposition was employed to the growth of GeTe thin films on Silicon substrates. X-ray diffraction measurements reveal that the critical crystallization temperature lies between 220 and 240 °C. Differential scanning calorimetry was used to investigate the crystallization kinetics of the as-deposited films, determining the activation energy to be 3.14 eV. Optical reflectivity and in situ resistance measurements exhibited a high reflectivity contrast of ∼21% and 3–4 orders of magnitude drop in resistivity of the films upon crystallization. The results show that pulsed laser deposited GeTe films can be a promising candidate for phase-change applications. (paper)

Surface properties tuning of welding electrode-deposited hardfacings by laser heat treatment

Science.gov (United States)

Oláh, Arthur; Croitoru, Catalin; Tierean, Mircea Horia

2018-04-01

In this paper, several Cr-Mn-rich hardfacings have been open-arc deposited on S275JR carbon quality structural steel and further submitted to laser treatment at different powers. An overall increase with 34-98% in the average microhardness and wear resistance of the coatings has been obtained, due to the formation of martensite, silicides, as well as simple and complex carbides on the surface of the hardfacings, in comparison with the reference, not submitted to laser thermal treatment. Surface laser treatment of electrode-deposited hardfacings improves their chemical resistance under corrosive saline environments, as determined by the 43% lower amount of leached iron and respectively, 28% lower amount of manganese ions leached in a 10% wt. NaCl aqueous solution, comparing with the reference hardfacings. Laser heat treatment also promotes better compatibility of the hardfacings with water-based paints and oil-based paints and primers, through the relative increasing in the polar component of the surface energy (with up to 65%) which aids both water and filler spreading on the metallic surface.

Roughness evolution in Ga doped ZnO films deposited by pulsed laser deposition

International Nuclear Information System (INIS)

Liu Yunyan; Cheng Chuanfu; Yang Shanying; Song Hongsheng; Wei Gongxiang; Xue Chengshan; Wang Yongzai

2011-01-01

We analyze the morphology evolution of the Ga doped ZnO(GZO) films deposited on quartz substrates by a laser deposition system. The surface morphologies of the film samples grown with different times are measured by the atomic force microscope, and they are analyzed quantitatively by using the image data. In the initial stage of the growth time shorter than 8 min, our analysis shows that the GZO surface morphologies are influenced by such factors as the random fluctuations, the smoothening effects in the deposition, the lateral strain and the substrate. The interface width uw(t) and the lateral correlation length ξ(t) at first decrease with deposition time t. For the growth time larger than 8 min, w(t) and ξ(t) increase with time and it indicates the roughening of the surface and the surface morphology exhibits the fractal characteristics. By fitting data of the roughness w(t) versus deposition time t larger than 4 min to the power-law function, we obtain the growth exponent β is 0.3; and by the height-height correlation functions of the samples to that of the self-affine fractal model, we obtain the value of roughness exponent α about 0.84 for all samples with different growth time t.

Structure and Morphology Effects on the Optical Properties of Bimetallic Nanoparticle Films Laser Deposited on a Glass Substrate

Directory of Open Access Journals (Sweden)

A. O. Kucherik

2017-01-01

Full Text Available Moving nanosecond laser system is used for laser-assisted thermodiffusion deposition of metallic nanoparticles from water-based colloidal solutions. The results obtained for both gold and silver nanoparticles show that film morphology strongly depends on laser scanning speed and the number of passages. We show, furthermore, the possibility of producing bimetallic Au:Ag thin films by laser irradiation of the mixed solutions. As a result of several laser scans, granular nanometric films are found to grow with a well-controlled composition, thickness, and morphology. By changing laser scanning parameters, film morphology can be varied from island structures to quasi-periodic arrays. The optical properties of the deposited structures are found to depend on the film composition, thickness, and mean separation between the particles. The transparency spectra of the deposited films are shown to be defined by their morphology.

Enhancement of coercivity with reduced grain size in CoCrPt film grown by pulsed laser deposition

International Nuclear Information System (INIS)

Liang, Q.; Hu, X.F.; Li, H.Q.; He, X.X.; Wang, Xiaoru; Zhang, W.

2006-01-01

We report a pulsed laser deposition (PLD) growth of VMn/CoCrPt bilayer with a magnetic coercivity (H c ) of 2.2 kOe and a grain size of 12 nm. The effects of VMn underlayer on magnetic properties of CoCrPt layer were studied. The coercivity, H c , and squareness, S, of VMn/CoCrPt bilayer, is dependent on the thickness of VMn. The grain size of the CoCrPt film can also be modified by laser parameters. High laser fluence used for CoCrPt deposition produces a smaller grain size. Enhanced H c and reduced grain size in VMn/CoCrPt is explained by more pronounced surface phase segregation during deposition at high laser fluence

Advances in boronization on NSTX-Upgrade

Directory of Open Access Journals (Sweden)

C. H Skinner

2017-08-01

Full Text Available Boronization has been effective in reducing plasma impurities and enabling access to higher density, higher confinement plasmas in many magnetic fusion devices. The National Spherical Torus eXperiment, NSTX, has recently undergone a major upgrade to NSTX-U in order to develop the physics basis for a ST-based Fusion Nuclear Science Facility (FNSF with capability for double the toroidal field, plasma current, and NBI heating power and increased pulse duration from 1–1.5s to 5–8s. A new deuterated tri-methyl boron conditioning system was implemented together with a novel surface analysis diagnostic. We report on the spatial distribution of the boron deposition versus discharge pressure, gas injection and electrode location. The oxygen concentration of the plasma facing surface was measured by in-vacuo XPS and increased both with plasma exposure and with exposure to trace residual gases. This increase correlated with the rise of oxygen emission from the plasma.

Deposition of high Tc superconductor thin films by pulsed excimer laser ablation and their post-synthesis processing

International Nuclear Information System (INIS)

Ogale, S.B.

1992-01-01

This paper describes the use of pulsed excimer laser ablation technique for deposition of high quality superconductor thin films on different substrate materials such as Y stabilized ZrO 2 , SrTiO 3 , LiNbO 3 , Silicon and Stainless Steels, and dopant incorporation during the film depositions. Processing of deposited films using ion and laser beams for realisation of device features are presented. 28 refs., 16 figs

Observation of self-assembled periodic nano-structures induced by femtosecond laser in both ablation and deposition regimes

Science.gov (United States)

Tang, Mingzhen; Zhang, Haitao; Her, Tsing-Hua

2008-02-01

We observed the spontaneous formation of periodic nano-structures in both femtosecond laser ablation and deposition. The former involved 400-nm femtosecond pulses from a 250-KHz regenerated amplified mode-locked Ti:sapphire laser and periodic nanocracks and the nano-structure are in the form of periodic nanocracks in the substrate, the latter applied an 80-MHz mode-locked Ti:sapphire oscillator with pulse energy less than half nanojoule in a laser-induced chemical vapor deposition configuration and tungsten nanogratings grow heterogeneously on top of the substrates. These two observed periodic nanostructures have opposite orientations respecting to laser polarization: the periodic nanocracks are perpendicular to, whereas the deposited tungsten nanogratings are parallel to laser polarization direction. By translating the substrate respecting to the laser focus, both the periodic nanocrack and tungsten nanograting extend to the whole scanning range. The deposited tungsten nanogratings possess excellent uniformity on both the grating period and tooth length. Both the attributes can be tuned precisely by controlling the laser power and scanning speed. Furthermore, we discovered that the teeth of transverse tungsten nanogratings are self aligned along their axial direction during multiple scanning with appropriate offset between scans. We demonstrate the feasibility of fabricating large-area one-dimensional grating by exploiting such unique property. These distinct phenomena of nanocracks and tungsten nanogratings indicate different responsible mechanisms.

High laser-fluence deposition of organic materials in water ice matrices by ''MAPLE''

DEFF Research Database (Denmark)

Christensen, Bo Toftmann; Rodrigo, K.; Schou, Jørgen

2005-01-01

Matrix assisted pulsed laser evaporation (MAPLE) is a deposition technique for organic material. Water ice was used as a matrix for the biotechnologically important guest material, polyethylene glycol (PEG), for concentrations from 0.5 to 4 wt.%. The target was irradiated with 6 ns laser pulses...

High strain amount in recessed junctions induced by selectively deposited boron-doped SiGe layers

International Nuclear Information System (INIS)

Radamson, H.H.; Kolahdouz, M.; Ghandi, R.; Ostling, M.

2008-01-01

This work presents the selective epitaxial growth (SEG) of Si 1-x Ge x (x = 0.15-0.315) layers with high amount of boron (1 x 10 20 -1 x 10 21 cm -3 ) in recessed or unprocessed (elevated) openings for source/drain applications in CMOS has been studied. The influence of the growth rate and strain on boron incorporation has been studied. A focus has been made on the strain distribution and boron incorporation in SEG of SiGe layers

High fluence deposition of polyethylene glycol films at 1064 nm by matrix assisted pulsed laser evaporation (MAPLE)

DEFF Research Database (Denmark)

Purice, Andreea; Schou, Jørgen; Kingshott, P.

2007-01-01

Matrix assisted pulsed laser evaporation (MAPLE) has been applied for deposition of thin polyethylene glycol (PEG) films with infrared laser light at 1064 nm. We have irradiated frozen targets (of 1 wt.% PEG dissolved in water) and measured the deposition rate in situ with a quartz crystal 2...... microbalance. The laser fluence needed to produce PEG films turned out to be unexpectedly high with a threshold of 9 J/cm(2) and the deposition rate was much lower than that with laser light at 355 nm. Results from matrix assisted laser desorption/ionization time-of-flight mass spectrometry (MALDI......-TOF-MS) analysis demonstrate that the chemistry, molecular weight and polydispersity of the PEG films were identical to the starting material. Studies of the film surface with scanning electron microscopy (SEM) indicate that the Si-substrate is covered by a relatively homogenous PEG film with few bare spots. (c...

Structure and photoluminescence of boron and nitrogen co-doped carbon nanorods

Energy Technology Data Exchange (ETDEWEB)

Wang, B.B. [College of Chemistry and Chemical Engineering, Chongqing University of Technology, 69 Hongguang Rd, Lijiatuo, Banan District, Chongqing 400054 (China); Gao, B. [College of Computer Science, Chongqing University, Chongqing 400044 (China); Chongqing Municipal Education Examinations Authority, Chongqing 401147 (China); Zhong, X.X., E-mail: xxzhong@sjtu.edu.cn [Department of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai 200240 (China); Shao, R.W.; Zheng, K. [Institute of Microstructure and Properties of Advanced Materials, Beijing University of Technology, Beijing 100124 (China)

2016-07-15

Graphical abstract: Boron- and nitrogen- doped carbon nanorods. - Highlights: • The co-doping of nitrogen and boron in carbon nanorods. • The doping mechanism of nitrogen and boron in carbon nanorods by plasma. • Photoluminescence properties of nitrogen- and boron-doped carbon nanorods. - Abstract: Boron and nitrogen doped carbon nanorods (BNCNRs) were synthesized by plasma-enhanced hot filament chemical vapor deposition, where methane, nitrogen and hydrogen were used as the reaction gases and boron carbide was the boron source. The results of scanning electron microscopy, micro-Raman spectroscopy, transmission electron microscopy and X-ray photoelectron spectroscopy indicate that boron and nitrogen can be used as co-dopants in amorphous carbon nanorods. Combined with the characterization results, the doping mechanism was studied. The mechanism is used to explain the formation of different carbon materials by different methods. The photoluminescence (PL) properties of BNCNRs were studied. The PL results show that the BNCNRs generate strong green PL bands and weak blue PL bands, and the PL intensity lowered due to the doping of boron. The outcomes advance our knowledge on the synthesis and optical properties of carbon-based nanomaterials and contribute to the development of optoelectronic nanodevices based on nano-carbon mateirals.

Hypersonic wave drag reduction performance of cylinders with repetitive laser energy depositions

International Nuclear Information System (INIS)

Fang, J; Hong, Y J; Li, Q; Huang, H

2011-01-01

It has been widely research that wave drag reduction on hypersonic vehicle by laser energy depositions. Using laser energy to reduce wave drag can improve vehicle performance. A second order accurate scheme based on finite-difference method and domain decomposition of structural grid is used to compute the drag performance of cylinders in a hypersonic flow of Mach number 2 at altitude of 15km with repetitive energy depositions. The effects of frequency on drag reduction are studied. The calculated results show: the recirculation zone is generated due to the interaction between bow shock over the cylinder and blast wave produced by energy deposition, and a virtual spike which is supported by an axis-symmetric recirculation, is formed in front of the cylinder. By increasing the repetitive frequency, the drag is reduced and the oscillation of the drag is decreased; however, the energy efficiency decreases by increasing the frequency.

Structural and optical properties of pulse laser deposited Ag2O thin films

Science.gov (United States)

Agasti, Souvik; Dewasi, Avijit; Mitra, Anirban

2018-05-01

We deposited Ag2O films in PLD system on glass substrate for a fixed partial oxygen gas pressure (70 mili Torr) and, with a variation of laser energy from 75 to 215 mJ/Pulse. The XRD patterns confirm that the films have well crystallinity and deposited as hexagonal lattice. The FESEM images show that the particle size of the films increased from 34.84 nm to 65.83 nm. The composition of the films is analyzed from EDX spectra which show that the percentage of oxygen increased by the increment of laser energy. From the optical characterization, it is observed that the optical band gap appears in the visible optical range in an increasing order from 0.87 to 0.98 eV with the increment of laser energy.

Internal energy deposition with silicon nanoparticle-assisted laser desorption/ionization (SPALDI) mass spectrometry

Science.gov (United States)

Dagan, Shai; Hua, Yimin; Boday, Dylan J.; Somogyi, Arpad; Wysocki, Ronald J.; Wysocki, Vicki H.

2009-06-01

The use of silicon nanoparticles for laser desorption/ionization (LDI) is a new appealing matrix-less approach for the selective and sensitive mass spectrometry of small molecules in MALDI instruments. Chemically modified silicon nanoparticles (30 nm) were previously found to require very low laser fluence in order to induce efficient LDI, which raised the question of internal energy deposition processes in that system. Here we report a comparative study of internal energy deposition from silicon nanoparticles to previously explored benzylpyridinium (BP) model compounds during LDI experiments. The internal energy deposition in silicon nanoparticle-assisted laser desorption/ionization (SPALDI) with different fluorinated linear chain modifiers (decyl, hexyl and propyl) was compared to LDI from untreated silicon nanoparticles and from the organic matrix, [alpha]-cyano-4-hydroxycinnamic acid (CHCA). The energy deposition to internal vibrational modes was evaluated by molecular ion survival curves and indicated that the ions produced by SPALDI have an internal energy threshold of 2.8-3.7 eV. This is slightly lower than the internal energy induced using the organic CHCA matrix, with similar molecular survival curves as previously reported for LDI off silicon nanowires. However, the internal energy associated with desorption/ionization from the silicon nanoparticles is significantly lower than that reported for desorption/ionization on silicon (DIOS). The measured survival yields in SPALDI gradually decrease with increasing laser fluence, contrary to reported results for silicon nanowires. The effect of modification of the silicon particle surface with semifluorinated linear chain silanes, including fluorinated decyl (C10), fluorinated hexyl (C6) and fluorinated propyl (C3) was explored too. The internal energy deposited increased with a decrease in the length of the modifier alkyl chain. Unmodified silicon particles exhibited the highest analyte internal energy

High strain amount in recessed junctions induced by selectively deposited boron-doped SiGe layers

Energy Technology Data Exchange (ETDEWEB)

Radamson, H.H. [School of Information and Communication Technology, KTH (Royal Institute of Technology) Isafjordsg. 22-26, Electrum 229, 16640 Kista (Sweden)], E-mail: rad@kth.se; Kolahdouz, M.; Ghandi, R.; Ostling, M. [School of Information and Communication Technology, KTH (Royal Institute of Technology) Isafjordsg. 22-26, Electrum 229, 16640 Kista (Sweden)

2008-12-05

This work presents the selective epitaxial growth (SEG) of Si{sub 1-x}Ge{sub x} (x = 0.15-0.315) layers with high amount of boron (1 x 10{sup 20}-1 x 10{sup 21} cm{sup -3}) in recessed or unprocessed (elevated) openings for source/drain applications in CMOS has been studied. The influence of the growth rate and strain on boron incorporation has been studied. A focus has been made on the strain distribution and boron incorporation in SEG of SiGe layers.

TiCN thin films grown by reactive crossed beam pulsed laser deposition

Science.gov (United States)

Escobar-Alarcón, L.; Camps, E.; Romero, S.; Muhl, S.; Camps, I.; Haro-Poniatowski, E.

2010-12-01

In this work, we used a crossed plasma configuration where the ablation of two different targets in a reactive atmosphere was performed to prepare nanocrystalline thin films of ternary compounds. In order to assess this alternative deposition configuration, titanium carbonitride (TiCN) thin films were deposited. Two crossed plasmas were produced by simultaneously ablating titanium and graphite targets in an Ar/N2 atmosphere. Films were deposited at room temperature onto Si (100) and AISI 4140 steel substrates whilst keeping the ablation conditions of the Ti target constant. By varying the laser fluence on the carbon target it was possible to study the effect of the carbon plasma on the characteristics of the deposited TiCN films. The structure and composition of the films were analyzed by X-ray Diffraction, Raman Spectroscopy and non-Rutherford Backscattering Spectroscopy. The hardness and elastic modulus of the films was also measured by nanoindentation. In general, the experimental results showed that the TiCN thin films were highly oriented in the (111) crystallographic direction with crystallite sizes as small as 6.0 nm. It was found that the hardness increased as the laser fluence was increased, reaching a maximum value of about 33 GPa and an elastic modulus of 244 GPa. With the proposed configuration, the carbon content could be easily varied from 42 to 5 at.% by changing the laser fluence on the carbon target.

Review of progress in pulsed laser deposition and using Nd:YAG laser in processing of high Tc superconductors

International Nuclear Information System (INIS)

Chen, C.W.; Mukherjee, K.

1993-01-01

The current progress in pulsed laser ablation of high-temperature superconductors is reviewed with emphasis on the effect of pulse-width and wavelength, nature of the plasma plume, post-annealing and methods to improve quality of films grown at low temperature. An ion beam assisted millisecond pulsed laser vapor deposition process has been developed to fabricate YBa 2 Cu 3 O x high T. superconductor thin films. Solution to target overheating problem, effects of oxygen ion beam, properties of deposited films, and effect of silver buffer layer on YSZ substrate are presented. A new laser calcining process has been used to produce near single phase high T c superconductors of Bi-Pb-Sr-Ca-Cu-0 system. The total processing time was reduced to about 100 hours which is about half of that for conventional sintering. For this compound both resistance and magnetic susceptibility data showed an onset of superconducting transition at about 110K. A sharp susceptibility drop was observed above 106K. The zero resistance temperature was about 98K. High T c phase was formed via a different kinetic path in laser calcined sample compare with the conventionally processed sample

Boron-doped zinc oxide thin films grown by metal organic chemical vapor deposition for bifacial a-Si:H/c-Si heterojunction solar cells

Energy Technology Data Exchange (ETDEWEB)

Zeng, Xiangbin, E-mail: eexbzeng@mail.hust.edu.cn; Wen, Xixing; Sun, Xiaohu; Liao, Wugang; Wen, Yangyang

2016-04-30

Boron-doped zinc oxide (BZO) films were grown by metal organic chemical vapor deposition. The influence of B{sub 2}H{sub 6} flow rate and substrate temperature on the microstructure, optical, and electrical properties of BZO films was investigated by X-ray diffraction spectrum, scanning electron microscope, optical transmittance spectrum, and Hall measurements. The BZO films with optical transmittance above 85% in the visible and infrared light range, resistivity of 0.9–1.0 × 10{sup −3} Ω cm, mobility of 16.5–25.5 cm{sup 2}/Vs, and carrier concentration of 2.2–2.7 × 10{sup 20} cm{sup −3} were deposited under optimized conditions. The optimum BZO films were applied on the bifacial BZO/p-type a-Si:H/i-type a-Si:H/n-type c-Si/i-type a-Si:H/n{sup +}-type a-Si:H/BZO heterojunction solar cell as both front and back transparent electrodes. Meanwhile, the bifacial heterojunction solar cell with indium tin oxide (ITO) as both front and back transparent electrodes was fabricated. The efficiencies of 17.788% (open-circuit voltage: 0.628 V, short-circuit current density: 41.756 mA/cm{sup 2} and fill factor: 0.678) and 16.443% (open-circuit voltage: 0.590 V, short-circuit current density: 36.515 mA/cm{sup 2} and fill factor: 0.762) were obtained on the a-Si/c-Si heterojunction solar cell with BZO and ITO transparent electrodes, respectively. - Highlights: • Boron-doped zinc oxide films with low resistivity were fabricated. • The boron-doped zinc oxide films have the high transmittance. • B-doped ZnO film was applied in a-Si:H/c-Si solar cell as transparent electrodes. • The a-Si:H/c-Si solar cell with efficiency of 17.788% was obtained.

Boron-doped zinc oxide thin films grown by metal organic chemical vapor deposition for bifacial a-Si:H/c-Si heterojunction solar cells

International Nuclear Information System (INIS)

Zeng, Xiangbin; Wen, Xixing; Sun, Xiaohu; Liao, Wugang; Wen, Yangyang

2016-01-01

Boron-doped zinc oxide (BZO) films were grown by metal organic chemical vapor deposition. The influence of B_2H_6 flow rate and substrate temperature on the microstructure, optical, and electrical properties of BZO films was investigated by X-ray diffraction spectrum, scanning electron microscope, optical transmittance spectrum, and Hall measurements. The BZO films with optical transmittance above 85% in the visible and infrared light range, resistivity of 0.9–1.0 × 10"−"3 Ω cm, mobility of 16.5–25.5 cm"2/Vs, and carrier concentration of 2.2–2.7 × 10"2"0 cm"−"3 were deposited under optimized conditions. The optimum BZO films were applied on the bifacial BZO/p-type a-Si:H/i-type a-Si:H/n-type c-Si/i-type a-Si:H/n"+-type a-Si:H/BZO heterojunction solar cell as both front and back transparent electrodes. Meanwhile, the bifacial heterojunction solar cell with indium tin oxide (ITO) as both front and back transparent electrodes was fabricated. The efficiencies of 17.788% (open-circuit voltage: 0.628 V, short-circuit current density: 41.756 mA/cm"2 and fill factor: 0.678) and 16.443% (open-circuit voltage: 0.590 V, short-circuit current density: 36.515 mA/cm"2 and fill factor: 0.762) were obtained on the a-Si/c-Si heterojunction solar cell with BZO and ITO transparent electrodes, respectively. - Highlights: • Boron-doped zinc oxide films with low resistivity were fabricated. • The boron-doped zinc oxide films have the high transmittance. • B-doped ZnO film was applied in a-Si:H/c-Si solar cell as transparent electrodes. • The a-Si:H/c-Si solar cell with efficiency of 17.788% was obtained.

Formation of copper tin sulfide films by pulsed laser deposition at 248 and 355 nm

DEFF Research Database (Denmark)

Ettlinger, Rebecca Bolt; Crovetto, Andrea; Canulescu, Stela

2016-01-01

The influence of the laser wavelength on the deposition of copper tin sulfide (CTS) and SnS-rich CTS with a 248-nm KrF excimer laser (pulse length τ = 20 ns) and a 355-nm frequency-tripled Nd:YAG laser (τ = 6 ns) was investigated. A comparative study of the two UV wavelengths shows that the CTS...... film growth rate per pulse was three to four times lower with the 248-nm laser than the 355-nm laser. SnS-rich CTS is more efficiently ablated than pure CTS. Films deposited at high fluence have submicron and micrometer size droplets, and the size and area density of the droplets do not vary significantly...

Beneficial effects of laser irradiation on the deposition process of diamond/Ni60 composite coating with cold spray

Energy Technology Data Exchange (ETDEWEB)

Yao, Jianhua, E-mail: laser@zjut.edu.cn; Yang, Lijing; Li, Bo; Li, Zhihong

2015-03-01

Graphical abstract: - Highlights: • The hard Ni-based alloy powder as matrix in diamond composite coating was studied. • The influence of laser on diamond distribution of composite coating was analyzed. • The graphitization of diamond was prohibited in supersonic laser deposition process. • The abrasion mechanisms of diamond/Ni60 composite coating were discussed. - Abstract: Although cold spray process has many unique advantages over other coating techniques, it has difficulties in depositing hard materials. This article presents a study in the beneficial effects of laser irradiation on the fabrication process of diamond/Ni60 composite coating using cold spray. The focus of this research is on the comparison between the composite coatings produced with laser cladding (LC) and with supersonic laser deposition (SLD), with respect to diamond graphitization and tribological properties, thus to demonstrate the beneficial effects of laser irradiation on the cold spray process. The influence of deposition temperature on the coating characteristics, such as deposition efficiency, diamond volume fraction, microstructure and phase is also investigated. The tribological properties of the diamond/Ni60 composite coating produced with SLD are determined using a pin-on-disc tribometer, along with the diamond/Ni60 coating produced using LC with the optimal process parameters for comparison. The experimental results show that with the assistance of laser irradiation, diamond/Ni60 composite coating can be successfully deposited using cold spray; the obtained coating is superior to that processed with LC, because SLD can suppress the graphitization of the diamond particles. The diamond/Ni60 composite coating fabricated with SLD has much better tribological properties than the LC coating.

Pulsed laser deposition of the lysozyme protein: an unexpected “Inverse MAPLE” process

DEFF Research Database (Denmark)

Schou, Jørgen; Matei, Andreea; Constantinescu, Catalin

2012-01-01

Films of organic materials are commonly deposited by laser assisted methods, such as MAPLE (matrix-assisted pulsed laser evaporation), where a few percent of the film material in the target is protected by a light-absorbing volatile matrix. Another possibility is to irradiate the dry organic...... the ejection and deposition of lysozyme. This can be called an “inverse MAPLE” process, since the ratio of “matrix” to film material in the target is 10:90, which is inverse of the typical MAPLE process where the film material is dissolved in the matrix down to several wt.%. Lysozyme is a well-known protein...

Thin films of NdFeB deposited by PLD technique

International Nuclear Information System (INIS)

Constantinescu, C.; Scarisoreanu, N.; Moldovan, A.; Dinescu, M.; Petrescu, L.; Epureanu, G.

2007-01-01

Neodymium-iron-boron (NdFeB) is a material with important magnetic properties, mostly used in permanent magnet fabrication. Thin layers of NdFeB are needed for miniaturization in electrical engineering, electronics and for high-tech devices. In this paper we applied pulsed lased deposition (PLD) in vacuum for obtaining thin films of NdFeB from stoichiometric targets. The influence of different buffer layers and of the laser parameters (wavelength and fluence) on the NdFeB structures, composition and magnetic properties have been investigated. The obtained structures were characterized by atomic force microscopy (AFM) and optical microscopy. Vibrating sample magnetometry (VSM) has been performed for specific magnetic characterization

Thin films of NdFeB deposited by PLD technique

Energy Technology Data Exchange (ETDEWEB)

Constantinescu, C. [National Institute for Laser, Plasma and Radiation Physics, P.O. Box MG 16, RO-077125 Magurele, Bucharest (Romania); Scarisoreanu, N. [National Institute for Laser, Plasma and Radiation Physics, P.O. Box MG 16, RO-077125 Magurele, Bucharest (Romania); Moldovan, A. [National Institute for Laser, Plasma and Radiation Physics, P.O. Box MG 16, RO-077125 Magurele, Bucharest (Romania); Dinescu, M. [National Institute for Laser, Plasma and Radiation Physics, P.O. Box MG 16, RO-077125 Magurele, Bucharest (Romania)]. E-mail: dinescum@ifin.nipne.ro; Petrescu, L. [Department of Electrical Engineering, ' Politehnica' University of Bucharest, 313 Spl. Independentei, 060042 Bucharest (Romania); Epureanu, G. [Department of Electrical Engineering, ' Politehnica' University of Bucharest, 313 Spl. Independentei, 060042 Bucharest (Romania)

2007-07-31

Neodymium-iron-boron (NdFeB) is a material with important magnetic properties, mostly used in permanent magnet fabrication. Thin layers of NdFeB are needed for miniaturization in electrical engineering, electronics and for high-tech devices. In this paper we applied pulsed lased deposition (PLD) in vacuum for obtaining thin films of NdFeB from stoichiometric targets. The influence of different buffer layers and of the laser parameters (wavelength and fluence) on the NdFeB structures, composition and magnetic properties have been investigated. The obtained structures were characterized by atomic force microscopy (AFM) and optical microscopy. Vibrating sample magnetometry (VSM) has been performed for specific magnetic characterization.

Resonant infrared pulsed laser deposition of a polyimide precursor

Energy Technology Data Exchange (ETDEWEB)

Dygert, N L; Schriver, K E; Jr, R F Haglund [Department of Physics and Astronomy and W M Keck Foundation Free-Electron Laser Centre, Vanderbilt University, Nashville TN 37235 (United States)

2007-04-15

Poly(amic acid) (PAA), a precursor to polyimide, was successfully deposited on substrates without reaching curing temperature, by resonant infrared pulsed laser ablation. The PAA was prepared by dissolving pyromellitic dianhydride and 4, 4' oxidianiline in the polar solvent Nmethyl pyrrolidinone (NMP). The PAA was deposited in droplet-like morphologies when ablation occurred in air, and in string-like moieties in the case of ablation in vacuum. In the as-deposited condition, the PAA was easily removed by washing with NMP; however, once cured thermally for thirty minutes, the PAA hardened, indicating the expected thermosetting property. Plume shadowgraphy showed very clear contrasts in the ablation mechanism between ablation of the solvent alone and the ablation of the PAA, even at low concentrations. A Wavelength dependence in plume velocity was also observed.

Solid-state nuclear magnetic resonance studies of phosphorus and boron in coals and combustion residues

Energy Technology Data Exchange (ETDEWEB)

Burchill, P.; Howarth, O.W.; Richards, D.G.; Sword, B.J. (British Coal Corporation, Stoke Orchard (UK). Coal Research Establishment)

1990-04-01

Solid-state nuclear magnetic resonance spectroscopy with magic angle spinning (MAS-n.m.r.) was used to study the occurrence of phosphorus and boron in coal, and their fate on combustion. These elements are only minor components of coal, but may significantly influence the utilization properties. {sup 31} P MAS-n.m.r. spectroscopy has confirmed that phosphorus is present in coal predominantly as apatite. This mineral is thermally stable under oxidizing conditions, and survives largely unaltered in high temperature ashes. However, under the semi-reducing bed conditions of certain stoker-fired boilers, it may be decomposed, volatilizing the phosphorus. The {sup 31}P MAS-n.m.r. spectra of bonded deposits show phosphorus in a markedly different coordination environment to that in apatite, the chemical shift suggesting aluminium phosphate or boron phosphate. {sup 11}B MAS-n.m.r. spectra of coals exhibit resonances due to both trigonal and tetrahedrally coordinated boron. Trigonal boron is probably present as tourmaline, but the nature of the tetrahedral boron is less certain; it may be held in tetrahedral sites within certain clay minerals. In common with phosphorus, boron may be volatilized during combustion. The {sup 11}B MAS-n.m.r. spectra of bonded deposits show a tetrahedral resonance with a chemical shift quite consistent with that of boron phosphate. 39 refs., 9 figs., 5 tabs.

New Icosahedral Boron Carbide Semiconductors

Science.gov (United States)

Echeverria Mora, Elena Maria

Novel semiconductor boron carbide films and boron carbide films doped with aromatic compounds have been investigated and characterized. Most of these semiconductors were formed by plasma enhanced chemical vapor deposition. The aromatic compound additives used, in this thesis, were pyridine (Py), aniline, and diaminobenzene (DAB). As one of the key parameters for semiconducting device functionality is the metal contact and, therefore, the chemical interactions or band bending that may occur at the metal/semiconductor interface, X-ray photoemission spectroscopy has been used to investigate the interaction of gold (Au) with these novel boron carbide-based semiconductors. Both n- and p-type films have been tested and pure boron carbide devices are compared to those containing aromatic compounds. The results show that boron carbide seems to behave differently from other semiconductors, opening a way for new analysis and approaches in device's functionality. By studying the electrical and optical properties of these films, it has been found that samples containing the aromatic compound exhibit an improvement in the electron-hole separation and charge extraction, as well as a decrease in the band gap. The hole carrier lifetimes for each sample were extracted from the capacitance-voltage, C(V), and current-voltage, I(V), curves. Additionally, devices, with boron carbide with the addition of pyridine, exhibited better collection of neutron capture generated pulses at ZERO applied bias, compared to the pure boron carbide samples. This is consistent with the longer carrier lifetimes estimated for these films. The I-V curves, as a function of external magnetic field, of the pure boron carbide films and films containing DAB demonstrate that significant room temperature negative magneto-resistance (> 100% for pure samples, and > 50% for samples containing DAB) is possible in the resulting dielectric thin films. Inclusion of DAB is not essential for significant negative magneto

Surface-enhanced Raman spectroscopy (SERS) using Ag nanoparticle films produced by pulsed laser deposition

Energy Technology Data Exchange (ETDEWEB)

Smyth, C.A., E-mail: smythc2@tcd.ie [School of Physics, Trinity College Dublin, Dublin 2 (Ireland); Mirza, I.; Lunney, J.G.; McCabe, E.M. [School of Physics, Trinity College Dublin, Dublin 2 (Ireland)

2013-01-01

Highlights: Black-Right-Pointing-Pointer Pulsed laser deposition (PLD) produces silver nanoparticle films. Black-Right-Pointing-Pointer These films can be used for surface-enhanced Raman spectroscopy (SERS). Black-Right-Pointing-Pointer Commercial film shows good SERS reproducibility but poor signal intensity. Black-Right-Pointing-Pointer PLD shows a good SERS response coupled with good reproducibility. - Abstract: Thin silver nanoparticle films, of thickness 7 nm, were deposited onto glass microslides using pulsed laser deposition (PLD). The films were then characterised using UV-vis spectroscopy and scanning transmission electron microscopy before Rhodamine 6G was deposited onto them for investigation using surface-enhanced Raman spectroscopy (SERS). The sensitivity obtained using SERS was compared to that obtained using a colloidal silver suspension and also to a commercial SERS substrate. The reproducibility of the films is also examined using statistical analysis.

UV pulsed laser deposition of magnetite thin films

International Nuclear Information System (INIS)

Parames, M.L.; Mariano, J.; Rogalski, M.S.; Popovici, N.; Conde, O.

2005-01-01

Magnetite thin films were grown by pulsed laser deposition in O 2 reactive atmosphere from Fe 3 O 4 targets. The ablated material was deposited onto Si(1 0 0) substrates at various temperatures up to 623 K. The temperature dependence of structure and stoichiometry was investigated by X-ray diffraction (XRD) and conversion electron Moessbauer spectroscopy (CEMS). The XRD results show that films grown between 483 and 623 K are obtained as pure phase magnetite with an estimated average crystallite size increasing from 14 to 35 nm, respectively. This is in agreement with the CEMS spectra analysis, indicating isomer shift and internal field values for both the T d and O h sites close to those reported for the bulk material and a random orientation of the magnetic moments. The influence of the deposition temperature on the estimated Fe (9-x)/3 O 4 stoichiometry is related to an increase in the vacancy concentration from 483 to 623 K

In situ detection of boron by ChemCam on Mars

Science.gov (United States)

Gasda, Patrick J.; Haldeman, Ethan B.; Wiens, Roger C.; Rapin, William; Bristow, Thomas F.; Bridges, John C.; Schwenzer, Susanne P.; Clark, Benton; Herkenhoff, Kenneth; Frydenvang, Jens; Lanza, Nina L.; Maurice, Sylvestre; Clegg, Samuel; Delapp, Dorothea M.; Sanford, Veronica L.; Bodine, Madeleine R.; McInroy, Rhonda

2017-09-01

We report the first in situ detection of boron on Mars. Boron has been detected in Gale crater at levels Curiosity rover ChemCam instrument in calcium-sulfate-filled fractures, which formed in a late-stage groundwater circulating mainly in phyllosilicate-rich bedrock interpreted as lacustrine in origin. We consider two main groundwater-driven hypotheses to explain the presence of boron in the veins: leaching of borates out of bedrock or the redistribution of borate by dissolution of borate-bearing evaporite deposits. Our results suggest that an evaporation mechanism is most likely, implying that Gale groundwaters were mildly alkaline. On Earth, boron may be a necessary component for the origin of life; on Mars, its presence suggests that subsurface groundwater conditions could have supported prebiotic chemical reactions if organics were also present and provides additional support for the past habitability of Gale crater.

Optoelectronic Characterization of Ta-Doped ZnO Thin Films by Pulsed Laser Deposition.

Science.gov (United States)

Koo, Horng-Show; Peng, Jo-Chi; Chen, Mi; Chin, Hung-I; Chen, Jaw-Yeh; Wu, Maw-Kuen

2015-11-01

Transparent conductive oxide of Ta-doped ZnO (TZO) film with doping amount of 3.0 wt% have been deposited on glass substrates (Corning Eagle XG) at substrate temperatures of 100 to 500 degrees C by the pulsed laser deposition (PLD) technique. The effect of substrate temperature on the structural, optical and electronic characteristics of Ta-doped ZnO (TZO) films with 3.0 wt% dopant of tantalum oxide (Ta2O5) was measured and demonstrated in terms of X-ray diffraction (XRD), ultraviolet-visible spectrometer (UV-Vis), four-probe and Hall-effect measurements. X-ray diffraction pattern shows that TZO films grow in hexagonal crystal structure of wurtzite phase with a preferred orientation of the crystallites along (002) direction and exhibits better physical characteristics of optical transmittance, electrical conductivity, carrier concentration and mobility for the application of window layer in the optoelectronic devices of solar cells, OLEDs and LEDs. The lowest electrical resistivity (ρ) and the highest carrier concentration of the as-deposited film deposited at 300 degrees C are measured as 2.6 x 10(-3) Ω-cm and 3.87 x 10(-20) cm(-3), respectively. The highest optical transmittance of the as-deposited film deposited at 500 degrees C is shown to be 93%, compared with another films deposited below 300 degrees C. It is found that electrical and optical properties of the as-deposited TZO film are greatly dependent on substrate temperature during laser ablation deposition.

Effect of laser power and scanning speed on laser deposited Ti6Al4V/TiB2 matrix composites

CSIR Research Space (South Africa)

Mokgalaka, MN

2012-10-01

Full Text Available Additive Manufacturing in Industry Conference, Kwa Maritane, Pilanesberg National Park, 31 October-2 November 2012 EFFECT OF LASER POWER AND SCANNING SPEED ON LASER DEPOSITED Ti6Al4V/TiB2 MATRIX COMPOSITES M.N. Mokgalaka2,1, S.L. Pityana1,2, A.P.I...

Deposition of Au/TiO2 film by pulsed laser

International Nuclear Information System (INIS)

Zhao Chongjun; Zhao Quanzhong; Zhao Qitao; Qiu Jianrong; Zhu Congshan

2006-01-01

Au nanoparticles, which were photoreduced by a Nd:YAG laser in HAuCl 4 solution containing TiO 2 colloid and accompanied by the TiO 2 particles, were deposited on the substrate surface. The film consisting of Au/TiO 2 particles was characterized by the absorption spectra, scanning electron microscopy (SEM) and X-ray diffraction (XRD) analysis. The adhesion between the film and substrate was evaluated by using adhesive tape test. It was found that the presence of TiO 2 dramatically enhanced the adhesion strength between the film and the substrate, as well as the deposition rate of film. The mechanism for the deposition of Au/TiO 2 film was also discussed

Effect of process parameters on formability of laser melting deposited 12CrNi2 alloy steel

Science.gov (United States)

Peng, Qian; Dong, Shiyun; Kang, Xueliang; Yan, Shixing; Men, Ping

2018-03-01

As a new rapid prototyping technology, the laser melting deposition technology not only has the advantages of fast forming, high efficiency, but also free control in the design and production chain. Therefore, it has drawn extensive attention from community.With the continuous improvement of steel performance requirements, high performance low-carbon alloy steel is gradually integrated into high-tech fields such as aerospace, high-speed train and armored equipment.However, it is necessary to further explore and optimize the difficult process of laser melting deposited alloy steel parts to achieve the performance and shape control.This article took the orthogonal experiment on alloy steel powder by laser melting deposition ,and revealed the influence rule of the laser power, scanning speed, powder gas flow on the quality of the sample than the dilution rate, surface morphology and microstructure analysis were carried out.Finally, under the optimum technological parameters, the Excellent surface quality of the alloy steel forming part with high density, no pore and cracks was obtained.

Structural characterization of thin films of titanium nitride deposited by laser ablation

International Nuclear Information System (INIS)

Castro C, M.A.; Escobar A, L.; Camps C, E.; Mejia H, J.A.

2004-01-01

Thin films of titanium nitride were deposited using the technique of laser ablation. It was studied the effect of the density of laser energy used for ablation the target as well as of the pressure of the work gas about the structure and the hardness of the deposited thin films. Depending on the pressure of the work gas films was obtained with preferential orientation in the directions (200) and (111). At a pressure of 1 x 10 -2 Torr only the direction (200) was observed. On the other hand to the pressure of 5 x 10 -3 Torr the deposited material this formed by a mixture of the orientation (200) and (111), being the direction (111) the predominant one. Thin films of Ti N were obtained with hardness of up to 24.0 GPa that makes to these attractive materials for mechanical applications. The hardness showed an approximately linear dependence with the energy density. (Author)

Determination of the Young's modulus of pulsed laser deposited epitaxial PZT thin films

NARCIS (Netherlands)

Nazeer, H.; Nguyen, Duc Minh; Woldering, L.A.; Abelmann, Leon; Rijnders, Augustinus J.H.M.; Elwenspoek, Michael Curt

2011-01-01

We determined the Young’s modulus of pulsed laser deposited epitaxially grown PbZr0.52Ti0.48O3 (PZT) thin films on microcantilevers by measuring the difference in cantilever resonance frequency before and after deposition. By carefully optimizing the accuracy of this technique, we were able to show

Nanostructures based in boro nitride thin films deposited by PLD onto Si/Si3N4/DLC substrate

International Nuclear Information System (INIS)

Roman, W S; Riascos, H; Caicedo, J C; Ospina, R; Tirado-MejIa, L

2009-01-01

Diamond-like carbon and boron nitride were deposited like nanostructered bilayer on Si/Si 3 N 4 substrate, both with (100) crystallographic orientation, these films were deposited through pulsed laser technique (Nd: YAG: 8 Jcm -2 , 9ns). Graphite (99.99%) and boron nitride (99.99%) targets used to growth the films in argon atmosphere. The thicknesses of bilayer were determined with a perfilometer, active vibration modes were analyzed using infrared spectroscopy (FTIR), finding bands associated around 1400 cm -1 for B - N bonding and bands around 1700 cm -1 associated with C=C stretching vibrations of non-conjugated alkenes and azometinic groups, respectively. The crystallites of thin films were analyzed using X-ray diffraction (XRD) and determinated the h-BN (0002), α-Si 3 N 4 (101) phases. The aim of this study is to relate the dependence on physical and chemical characteristics of the system Si/Si 3 N 4 /DLC/BN with gas pressure adjusted at the 1.33, 2.67 and 5.33 Pa values.

Evaluation of Aluminum-Boron Carbide Neutron Absorbing Materials for Interim Storage of Used Nuclear Fuel

Energy Technology Data Exchange (ETDEWEB)

Wang, Lumin [Univ. of Michigan, Ann Arbor, MI (United States). Department of Nuclear Engineering and Radiological Science; Wierschke, Jonathan Brett [Univ. of Michigan, Ann Arbor, MI (United States). Department of Nuclear Engineering and Radiological Science

2015-04-08

The objective of this work was to understand the corrosion behavior of Boral® and Bortec® neutron absorbers over long-term deployment in a used nuclear fuel dry cask storage environment. Corrosion effects were accelerated by flowing humidified argon through an autoclave at temperatures up to 570°C. Test results show little corrosion of the aluminum matrix but that boron is leaching out of the samples. Initial tests performed at 400 and 570°C were hampered by reduced flow caused by the rapid build-up of solid deposits in the outlet lines. Analysis of the deposits by XRD shows that the deposits are comprised of boron trioxide and sassolite (H₃BO₃). The collection of boron- containing compounds in the outlet lines indicated that boron was being released from the samples. Observation of the exposed samples using SEM and optical microscopy show the growth of new phases in the samples. These phases were most prominent in Bortec® samples exposed at 570°C. Samples of Boral® exposed at 570°C showed minimal new phase formation but showed nearly the complete loss of boron carbide particles. Boron carbide loss was also significant in Boral samples at 400°C. However, at 400°C phases similar to those found in Bortec® were observed. The rapid loss of the boron carbide particles in the Boral® is suspected to inhibit the formation of the new secondary phases. However, Material samples in an actual dry cask environment would be exposed to temperatures closer to 300°C and less water than the lowest test. The results from this study conclude that at the temperature and humidity levels present in a dry cask environment, corrosion and boron leaching will have no effect on the performance of Boral® and Bortec® to maintain criticality control.

Amorphous Terfenol-D films using nanosecond pulsed laser deposition

International Nuclear Information System (INIS)

Ma, James; O'Brien, Daniel T.; Kovar, Desiderio

2009-01-01

Thin films of Terfenol-D were produced by nanosecond pulsed laser deposition (PLD) at two fluences. Electron dispersive spectroscopy conducted using scanning electron and transmission electron microscopes showed that the film compositions were similar to that of the PLD target. Contrary to previous assertions that suggested that nanosecond PLD results in crystalline films, X-ray diffraction and transmission electron microscopy analysis showed that the films produced at both fluences were amorphous. Splatters present on the film had similar compositions to the overall film and were also amorphous. Magnetic measurements showed that the films had high saturation magnetization and magnetostriction, similar to high quality films produced using other physical vapor deposition methods.

Pulsed laser deposition of nanostructured Co-B-O thin films as efficient catalyst for hydrogen production

Energy Technology Data Exchange (ETDEWEB)

Jadhav, H., E-mail: jadhav.hs2013@gmail.com [Laser and Plasma Technology Division, Bhabha Atomic Research Centre, Trombay, Mumbai 400085 (India); Singh, A.K. [Laser and Plasma Technology Division, Bhabha Atomic Research Centre, Trombay, Mumbai 400085 (India); Patel, N.; Fernandes, R.; Gupta, S.; Kothari, D.C. [Department of Physics and National Centre for Nanosciences & Nanotechnology, University of Mumbai, Vidyanagari, Santacruz (E), Mumbai 400098 (India); Miotello, A. [Dipartimento di Fisica, Università degli Studi di Trento, I-38123 Povo, Trento (Italy); Sinha, S. [Laser and Plasma Technology Division, Bhabha Atomic Research Centre, Trombay, Mumbai 400085 (India)

2016-11-30

Highlights: • Pulsed laser deposition was used to deposit Co-B-O film nanocatalyst. • Co-B-O NPs are well separated, stable and immobilized on film surface. • Catalytic H{sub 2} production was studied by hydrolysis of Sodium Borohydride. • Four times higher H{sub 2} production rate was recorded for Co-B-O film than Co-B-O powder. • High particle density, polycrystalline nature and good stability against agglomeration of Co NPs. - Abstract: Nanoparticles assembled Co-B-O thin film catalysts were synthesized by pulsed laser deposition (PLD) technique for hydrolysis of Sodium Borohydride (SBH). Surface morphology of the deposited films was investigated using SEM and TEM, while compositional analysis was studied using XPS. Structural properties of Co-B-O films were examined using XRD and HRTEM. Laser process is able to produce well separated and immobilized Co-B-O NPs on the film surface which act as active centers leading to superior catalytic activity producing hydrogen at a significantly higher rate as compared to bulk powder. Co-B-O thin film catalyst produces hydrogen at a maximum rate of ∼4400 ml min{sup −1} g{sup −1} of catalyst, which is four times higher than powder catalyst. PLD parameters such as laser fluence and substrate-target distance were varied during deposition in order to understand the role of size and density of the immobilized Co-B-O NPs in the catalytic process. Films deposited at 3–5 cm substrate-target distance showed better performance than that deposited at 6 cm, mainly on account of the higher density of active Co-B-O NPs on the films surface. Features such as high particle density, polycrystalline nature of Co NPs and good stability against agglomeration mainly contribute towards the superior catalytic activity of Co-B-O films deposited by PLD.

Parametric study of development of Inconel-steel functionally graded materials by laser direct metal deposition

International Nuclear Information System (INIS)

Shah, Kamran; Haq, Izhar ul; Khan, Ashfaq; Shah, Shaukat Ali; Khan, Mushtaq; Pinkerton, Andrew J

2014-01-01

Highlights: • Functionally graded steel and nickel super-alloy structures have been developed. • Mechanical properties of FGMs can be controlled by process input parameters. • SDAS is strongly dependent on the laser power and powder mass flow rate. • Carbides provide a mechanism to control the hardness and wear resistance of FGM. • Tensile strength of FGM is dependent on the laser power and powder mass flow rate. - Abstract: Laser direct metal deposition (LDMD) has developed from a prototyping to a single and multiple metals manufacturing technique. It offers an opportunity to produce graded components, with differing elemental composition, phase and microstructure at different locations. In this work, continuously graded Stainless Steel 316L and Inconel 718 thin wall structures made by direct laser metal deposition process have been explored. The paper considers the effects of process parameters including laser power levels and powder mass flow rates of SS316L and Inconel 718 during the deposition of the Steel–Ni graded structures. Microstructure characterisation and phase identification are performed by optical microscopy and X-ray diffraction techniques. Mechanical testing, using methods such as hardness, wear resistance and tensile testing have been carried out on the structures. XRD results show the presence of the NbC and Fe 2 Nb phases formed during the deposition. The effect of experimental parameters on the microstructure and physical properties are determined and discussed. Work shows that mechanical properties can be controlled by input parameters and generation of carbides provides an opportunity to selectively control the hardness and wear resistance of the functionally graded material

Pulsed Laser deposition of Al2O3 thin film on silicon

International Nuclear Information System (INIS)

Lamagna, A.; Duhalde, S.; Correra, L.; Nicoletti, S.

1998-01-01

Al 2 O 3 thin films were fabricated by pulsed laser deposition (PLD) on Si 3 N 4 /Si, to improve the thermal and electrical isolation of gas sensing devices. The microstructure of the films is analysed as a function of the deposition conditions (laser fluence, oxygen pressure, target-substrate distance and substrate temperature). X-ray analysis shows that only a sharp peak that coincides with the corundum (116) reflection can be observed in all the films. But, when they are annealed at temperatures above 1,200 degree centigrade, a change in the crystalline structure of some films occurs. The stoichiometry and morphology of the films with and without thermal treatment are compared using environmental scanning electron microscopy (SEM) and EDAX analysis. (Author) 14 refs

Comparisons between a gas-phase model of silane chemical vapor deposition and laser-diagnostic measurements

International Nuclear Information System (INIS)

Breiland, W.G.; Coltrin, M.E.; Ho, P.

1986-01-01

Theoretical modeling and experimental measurements have been used to study gas-phase chemistry in the chemical vapor deposition (CVD) of silicon from silane. Pulsed laser Raman spectroscopy was used to obtain temperature profiles and to obtain absolute density profiles of silane during deposition at atmospheric and 6-Torr total pressures for temperatures ranging from 500 to 800 0 C. Laser-excited fluorescence was used to obtain relative density profiles of Si 2 during deposition at 740 0 C in helium with 0-12 Torr added hydrogen. These measurements are compared to predictions from the theoretical model of Coltrin, Kee, and Miller. The predictions agree qualitatively with experiment. These studies indicate that fluid mechanics and gas-phase chemical kinetics are important considerations in understanding the chemical vapor deposition process

Boron doping compensation of hydrogenated amorphous and polymorphous germanium thin films for infrared detection applications

Energy Technology Data Exchange (ETDEWEB)

Moreno, M., E-mail: mmoreno@inaoep.mx [National Institute of Astrophysics, Optics and Electronics, INAOE, P.O. Box 51 and 216, Puebla, Z. P. 72840 Puebla (Mexico); Delgadillo, N. [Universidad Autónoma de Tlaxcala, Av. Universidad No. 1, Z. P. 90006 Tlaxcala (Mexico); Torres, A. [National Institute of Astrophysics, Optics and Electronics, INAOE, P.O. Box 51 and 216, Puebla, Z. P. 72840 Puebla (Mexico); Ambrosio, R. [Technology and Engineering Institute, Ciudad Juarez University UACJ, Av. Del Charro 450N, Z. P. 32310 Chihuahua (Mexico); Rosales, P.; Kosarev, A.; Reyes-Betanzo, C.; Hidalga-Wade, J. de la; Zuniga, C.; Calleja, W. [National Institute of Astrophysics, Optics and Electronics, INAOE, P.O. Box 51 and 216, Puebla, Z. P. 72840 Puebla (Mexico)

2013-12-02

In this work we have studied boron doping of hydrogenated amorphous germanium a-Ge:H and polymorphous germanium (pm-Ge:H) in low regimes, in order to compensate the material from n-type (due to oxygen contamination that commonly occurs during plasma deposition) to intrinsic, and in this manner improve the properties that are important for infrared (IR) detection, as activation energy (E{sub a}) and temperature coefficient of resistance (TCR). Electrical, structural and optical characterization was performed on the films produced. Measurements of the temperature dependence of conductivity, room temperature conductivity (σ{sub RT}), E{sub a} and current–voltage characteristics under IR radiation were performed in the compensated a-Ge:H and pm-Ge:H films. Our results demonstrate that, effectively, the values of E{sub a}, TCR and IR detection are improved on the a-Ge:H/pm-Ge:H films, using boron doping in low regimes, which results of interest for infrared detectors. - Highlights: • We reported boron doping compensation of amorphous and polymorphous germanium. • The films were deposited by plasma enhanced chemical vapor deposition. • The aim is to use the films as thermo-sensing elements in un-cooled microbolometers. • Those films have advantages over boron doped a-Si:H used in commercial detectors.

Boron doping compensation of hydrogenated amorphous and polymorphous germanium thin films for infrared detection applications

International Nuclear Information System (INIS)

Moreno, M.; Delgadillo, N.; Torres, A.; Ambrosio, R.; Rosales, P.; Kosarev, A.; Reyes-Betanzo, C.; Hidalga-Wade, J. de la; Zuniga, C.; Calleja, W.

2013-01-01

In this work we have studied boron doping of hydrogenated amorphous germanium a-Ge:H and polymorphous germanium (pm-Ge:H) in low regimes, in order to compensate the material from n-type (due to oxygen contamination that commonly occurs during plasma deposition) to intrinsic, and in this manner improve the properties that are important for infrared (IR) detection, as activation energy (E a ) and temperature coefficient of resistance (TCR). Electrical, structural and optical characterization was performed on the films produced. Measurements of the temperature dependence of conductivity, room temperature conductivity (σ RT ), E a and current–voltage characteristics under IR radiation were performed in the compensated a-Ge:H and pm-Ge:H films. Our results demonstrate that, effectively, the values of E a , TCR and IR detection are improved on the a-Ge:H/pm-Ge:H films, using boron doping in low regimes, which results of interest for infrared detectors. - Highlights: • We reported boron doping compensation of amorphous and polymorphous germanium. • The films were deposited by plasma enhanced chemical vapor deposition. • The aim is to use the films as thermo-sensing elements in un-cooled microbolometers. • Those films have advantages over boron doped a-Si:H used in commercial detectors

Synthesis of Few-Layer, Large Area Hexagonal-Boron Nitride by Pulsed Laser Deposition (POSTPRINT)

Science.gov (United States)

2014-09-01

invention that may relate to them. This report was cleared for public release by the USAF 88th Air Base Wing (88 ABW) Public Affairs Office (PAO) and...ered with a shutter. Depositions were performed in nitrogen background gas, where pressure was controlled by a butterfly valve to preset values within

The flip-over effect in pulsed laser deposition: Is it relevant at high background gas pressures?

International Nuclear Information System (INIS)

Ojeda-G-P, Alejandro; Schneider, Christof W.; Döbeli, Max; Lippert, Thomas; Wokaun, Alexander

2015-01-01

Highlights: • The flip-over effect in PLD is observed up to high deposition pressures. • Consistent congruent transfer of the target composition is generally not correct. • The choice of deposition pressure can change the film composition strongly. • Large compositional changes appear at high off-axis angles and large spot sizes. - Abstract: In pulsed laser deposition the use of a rectangular or elliptical beam spot with a non 1:1 aspect ratio leads to the so called flip-over effect. Here, the longest dimension of the laser spot results in the shortest direction of plasma plume expansion. This effect has been mainly reported for vacuum depositions of single element targets and is particularly noticeable when the aspect ratio of the beam spot is large. We investigate the flip-over effect in vacuum and at three relevant background-gas pressures for pulsed laser deposition using a La 0.4 Ca 0.6 MnO 3 target by measuring the thickness dependence of the deposited material as a function of angle. The film thicknesses and compositions are determined by Rutherford backscattering and argon is used to reduce the influence of additional chemical reactions in the plasma. The results show the prevalence of the flip-over effect for all pressures except for the highest, i.e. 1 × 10 −1 mbar, where the film thickness is constant for all angles. The composition profiles show noticeable compositional variations of up to 30% with respect to the target material depending on the background gas pressure, the angular location, and the laser spot dimensions.

GEOLOGICAL FEATURES OF NEOGENE BASINS HOSTING BORATE DEPOSITS: AN OVERVIEW OF DEPOSITS AND FUTURE FORECAST, TURKEY

Directory of Open Access Journals (Sweden)

Cahit HELVACI

2015-12-01

Full Text Available The geometry, stratigraphy, tectonics and volcanic components of the borate bearing Neogene basins in western Anatolia offer some important insights into on the relationship between basin evolution, borate formation and mode of extension in western Anatolia. Some of the borate deposits in NE-SW trending basins developed along the İzmir-Balıkesir Transfer Zone (İBTZ (e.g. Bigadiç, Sultançayır and Kestelek basins, and other deposits in the NE-SW trending basins which occur on the northern side of the Menderes Core Complex (MCC are the Selendi and Emet basins. The Kırka borate deposit occurs further to the east and is located in a completely different geological setting and volcanostratigraphic succession. Boron is widely distributed; including in soil and water, plants and animals. The element boron does not exist freely by itself in nature, but rather it occurs in combination with oxygen and other elements in salts, commonly known as borates. Approximately 280 boron-bearing minerals have been identified, the most common being sodium, calcium and magnesium salts. Four main continental metallogenic borate provinces are recognized at a global scale. They are located in Anatolia (Turkey, California (USA, Central Andes (South America and Tibet (Central Asia. The origin of borate deposits is related to Cenozoic volcanism, thermal spring activity, closed basins and arid climate. Borax is the major commercial source of boron, with major supplies coming from Turkey, USA and Argentina. Colemanite is the main calcium borate and large scale production is restricted to Turkey. Datolite and szaibelyite are confined to Russia and Chinese sources. Four Main borax (tincal deposits are present in Anatolia (Kırka, California (Boron, and two in the Andes (Tincalayu and Loma Blanca. Kırka, Boron and Loma Blanca have similarities with regard to their chemical and mineralogical composition of the borate minerals. Colemanite deposits with/without probertite and

Aluminosilicate glass thin films elaborated by pulsed laser deposition

Energy Technology Data Exchange (ETDEWEB)

Carlier, Thibault [Univ. Lille, CNRS, Centrale Lille, ENSCL, Univ. Artois, UMR 8181 – UCCS – Unité de Catalyse et Chimie du Solide, F-59000 Lille (France); Saitzek, Sébastien [Univ. Artois, CNRS, Centrale Lille, ENSCL, Univ. Lille, UMR 8181, Unité de Catalyse et de Chimie du Solide (UCCS), F-62300 Lens (France); Méar, François O., E-mail: francois.mear@univ-lille1.fr [Univ. Lille, CNRS, Centrale Lille, ENSCL, Univ. Artois, UMR 8181 – UCCS – Unité de Catalyse et Chimie du Solide, F-59000 Lille (France); Blach, Jean-François; Ferri, Anthony [Univ. Artois, CNRS, Centrale Lille, ENSCL, Univ. Lille, UMR 8181, Unité de Catalyse et de Chimie du Solide (UCCS), F-62300 Lens (France); Huvé, Marielle; Montagne, Lionel [Univ. Lille, CNRS, Centrale Lille, ENSCL, Univ. Artois, UMR 8181 – UCCS – Unité de Catalyse et Chimie du Solide, F-59000 Lille (France)

2017-03-01

Highlights: • Successfully deposition of a glassy thin film by PLD. • A good homogeneity and stoichiometry of the coating. • Influence of the deposition temperature on the glassy thin-film structure. - Abstract: In the present work, we report the elaboration of aluminosilicate glass thin films by Pulsed Laser Deposition at various temperatures deposition. The amorphous nature of glass thin films was highlighted by Grazing Incidence X-Ray Diffraction and no nanocristallites were observed in the glassy matrix. Chemical analysis, obtained with X-ray Photoelectron Spectroscopy and Time of Flight Secondary Ion Mass Spectroscopy, showed a good transfer and homogeneous elementary distribution with of chemical species from the target to the film a. Structural studies performed by Infrared Spectroscopy showed that the substrate temperature plays an important role on the bonding configuration of the layers. A slight shift of Si-O modes to larger wavenumber was observed with the synthesis temperature, assigned to a more strained sub-oxide network. Finally, optical properties of thins film measured by Spectroscopic Ellipsometry are similar to those of the bulk aluminosilicate glass, which indicate a good deposition of aluminosilicate bulk glass.

SiC interlayer by laser-cladding on WC-Co substrates for CVD diamond deposition

Energy Technology Data Exchange (ETDEWEB)

Contin, Andre; Fraga, Mariana Amorim; Vieira, Jose; Trava-Airoldi, Vladimir Jesus; Corat, Evaldo Jose, E-mail: andrecontin@yahoo.com.br [Instituto Nacional de Pesquisas Espaciais (INPE), Sao Jose dos Campos, SP (Brazil); Campos, Raonei Alves [Universidade Federal do Sul e Sudeste do Para (UNIFESSPA), Belem, PA (Brazil); Vasconcelos, Getulio [Instituto de Estudos Avancados (IEA), Sao Jose dos Campos, SP (Brazil)

2016-07-01

Full text: Despite their huge industrial potential and commercial interest, the direct diamond coating on cemented carbide (WC-Co) is limited, mainly because of the catalytic effect of Cobalt (Co) and the high difference in thermal expansion coefficient [1]. This results in poor adherence between diamond and WC-Co. In addition, the low diamond film adhesion to the cemented carbide useless for machining applications. Removal of Co binder from the substrate surface by superficial etching is one of the techniques used to improve the adhesion between diamond and WC-Co. For the present study, diamond films were deposited on WC-Co substrates with an intermediate barrier to block the Co diffusion to the surface substrate. The laser cladding process produced the SiC barrier, in which a powder layer is melted by a laser irradiation to create the coating on the substrate. The use of laser cladding is the novel method for an intermediate barrier for cemented carbides. The advantages of laser cladding include a faster processing speed, precision, versatility. We reported the application of pretreatment method called ESND (Electrostatic self-assembly seeding of nanocrystalline diamond). The nucleation density was around 10{sup 11}part/cm{sup 2}. Diamond films were grown by Hot Filament Chemical Vapor Deposition. Characterization of samples included Field Emission Gun-Scanning Electron Microscopy (FEG-SEM), Energy Dispersive X-ray (EDX), X-ray diffraction (XRD) and Raman Scattering Spectroscopy. Results showed that laser irradiation formed stable Co compounds in the interfacial barrier. It is because nucleation and good quality of diamond film since the cobalt are no longer free to migrate to the surface during the CVD diamond deposition. Reference: [1] Y. X. Cui, B. Shen, F. H. Sun. Diamond deposition on WC–Co substrate with amorphous SiC interlayer, Surface Engineering, 30, (2014) 237-243. (author)

Defect studies of thin ZnO films prepared by pulsed laser deposition

International Nuclear Information System (INIS)

Vlček, M; Čížek, J; Procházka, I; Novotný, M; Bulíř, J; Lančok, J; Anwand, W; Brauer, G; Mosnier, J-P

2014-01-01

Thin ZnO films were grown by pulsed laser deposition on four different substrates: sapphire (0 0 0 1), MgO (1 0 0), fused silica and nanocrystalline synthetic diamond. Defect studies by slow positron implantation spectroscopy (SPIS) revealed significantly higher concentration of defects in the studied films when compared to a bulk ZnO single crystal. The concentration of defects in the films deposited on single crystal sapphire and MgO substrates is higher than in the films deposited on amorphous fused silica substrate and nanocrystalline synthetic diamond. Furthermore, the effect of deposition temperature on film quality was investigated in ZnO films deposited on synthetic diamond substrates. Defect studies performed by SPIS revealed that the concentration of defects firstly decreases with increasing deposition temperature, but at too high deposition temperatures it increases again. The lowest concentration of defects was found in the film deposited at 450° C.

Pulsed Laser Deposition of Polymers Doped with Fluorescent Probes. Application to Environmental Sensors

International Nuclear Information System (INIS)

Rebollar, E; Villavieja, Mm; Gaspard, S; Oujja, M; Corrales, T; Georgiou, S; Domingo, C; Bosch, P; Castillejo, M

2007-01-01

Pulsed laser deposition (PLD) has been used to obtain thin films of poly(methyl methacrylate) and polystyrene doped with fluorescent probes, amino aromatic compounds S5 and S6, that could be used to sense the presence of contaminating environmental agents. These dopants both in solution and inserted in polymeric films are sensitive to changes in pH, viscosity and polarity, increasing their fluorescence emission and/or modifying the position of their emission band. Films deposits on quartz substrates, obtained by irradiating targets with a Ti:Sapphire laser (800 nm, 120 fs pulse) were analyzed by optical and Environmental Scanning Electron Microscopy, Fluorescence Microscopy, Laser-Induced Fluorescence, Micro Raman Spectroscopy and Flow Injection Analysis-Mass Spectrometry. The transfer of the polymer and the probe to the substrate is observed to be strongly dependent on the optical absorption coefficient of the polymeric component of the target at the irradiation wavelength

Dimensional and material characteristics of direct deposited tool steel by CO II laser

Science.gov (United States)

Choi, J.

2006-01-01

Laser aided direct metalimaterial deposition (DMD) process builds metallic parts layer-by-layer directly from the CAD representation. In general, the process uses powdered metaUmaterials fed into a melt pool, creating fully dense parts. Success of this technology in the die and tool industry depends on the parts quality to be achieved. To obtain designed geometric dimensions and material properties, delicate control of the parameters such as laser power, spot diameter, traverse speed and powder mass flow rate is critical. In this paper, the dimensional and material characteristics of directed deposited H13 tool steel by CO II laser are investigated for the DMD process with a feedback height control system. The relationships between DMD process variables and the product characteristics are analyzed using statistical techniques. The performance of the DMD process is examined with the material characteristics of hardness, porosity, microstructure, and composition.

B4C solid target boronization of the MST reversed-field pinch

International Nuclear Information System (INIS)

Den Hartog, D.J.; Cekic, M.; Fiksel, G.; Hokin, S.A.; Kendrick, R.D.; Prager, S.C.; Stoneking, M.R.

1992-10-01

A solid rod of hot-pressed boron carbide is being used as the source of boron during boronization of MST. The most striking result of this procedure is the reduction in oxygen contamination of the plasma (O III radiation, characteristic of oxygen at the edge, falls by about a factor of 3 after boronization.). The radiated power fraction drops to about half its initial value. Particle reflux from the wall is also lowered, making density control simpler. The rod (12.7 mm diameter) is inserted into the edge plasma of normal high-power RFP discharges. B 4 C is ablated from the surface of the rod and deposited in a thin film (a-B/C:H) on the walls and limiters. The energy flux carried by ''superthermal'' (not ''runaway'') electrons at the edge of MST appears to enhance the efficient, non-destructive ablation of the boron carbide rod

Heating effect of substrate of pulsed laser ablation deposition technique towards the orientation of carbon microstructure

International Nuclear Information System (INIS)

Choy, L.S.; Irmawati Ramli; Noorhana Yahya; Abdul Halim Shaari

2009-01-01

Full text: Carbon thin film has been successfully deposited by second harmonic Nd:YAG pulsed laser ablation deposition, PLAD. The topology and morphology of the deposited layers was studied by scanning electron microscopy (SEM) whereas emission dispersion X-ray (EDX) was used to determine the existence of elements that constitutes the microstructure. Substrate heated at 500 degree Celsius during the laser ablation showed the most homogenous lollipop microstructure as compared to mainly pillars of microstructure ablated at lower substrate temperature. It is found that this also avoid further diffusion of carbon into catalyst in forming iron carbide. (author)

Improvement in the electronic quality of pulsed laser deposited CuIn{sub 0.7}Ga{sub 0.3}Se{sub 2} thin films via post-deposition elemental sulfur annealing process

Energy Technology Data Exchange (ETDEWEB)

Beres, M., E-mail: matthewcberes@gmail.com [University of California, Department of Mechanical Engineering, 6141 Etcheverry Hall, Berkeley, CA 94720 (United States); Lawrence Berkeley National Laboratory, 1 Cyclotron Rd, Berkeley, CA 94720 (United States); Yu, K.M., E-mail: kinmanyu@cityu.edu.hk [Lawrence Berkeley National Laboratory, 1 Cyclotron Rd, Berkeley, CA 94720 (United States); City University of Hong Kong, Department of Physics and Materials Science, 83 Tat Chee Avenue, Kowloon, Hong Kong Special Administrative Region (Hong Kong); Syzdek, J., E-mail: jego.mejl@gmail.com [Lawrence Berkeley National Laboratory, 1 Cyclotron Rd, Berkeley, CA 94720 (United States); Bio-Logic USA, 9050 Executive Park Dr NW, Knoxville, TN 37923 (United States); Mao, S.S., E-mail: ssmao@me.berkeley.edu [University of California, Department of Mechanical Engineering, 6141 Etcheverry Hall, Berkeley, CA 94720 (United States); Lawrence Berkeley National Laboratory, 1 Cyclotron Rd, Berkeley, CA 94720 (United States)

2016-06-01

We synthesized CuIn{sub 0.7}Ga{sub 0.3}Se{sub 2} thin films on soda lime glass substrates using pulsed laser deposition and post-annealing under different conditions. Increasing substrate temperature during deposition and vacuum annealing after deposition both increased grain size but had negligible effect on the electronic properties of the films. As-deposited films demonstrated P-type conductivities with high carrier concentrations and low Hall mobilities, but annealing in elemental sulfur environment significantly improved the electronic properties of the films. We found that the incorporation of even small quantities of sulfur into the films reduced carrier concentrations by over three orders of magnitude and increased Hall mobilities by an order of magnitude. This resulted in films with resistivity ~ 5 Ω·cm suitable for photovoltaic applications. - Highlights: • CIGSe thin films were deposited by pulsed laser deposition. • Laser deposition parameters and annealing parameters were investigated. • As-deposited films demonstrated high hole concentrations and low Hall mobilities. • Elemental sulfur annealing significantly enhanced the electronic quality of films.

Boron

Science.gov (United States)

Boron is an essential micronutrient element required for plant growth. Boron deficiency is wide-spread in crop plants throughout the world especially in coarse-textured soils in humid areas. Boron toxicity can also occur, especially in arid regions under irrigation. Plants respond directly to the...

The flip-over effect in pulsed laser deposition: Is it relevant at high background gas pressures?

Science.gov (United States)

Ojeda-G-P, Alejandro; Schneider, Christof W.; Döbeli, Max; Lippert, Thomas; Wokaun, Alexander

2015-12-01

In pulsed laser deposition the use of a rectangular or elliptical beam spot with a non 1:1 aspect ratio leads to the so called flip-over effect. Here, the longest dimension of the laser spot results in the shortest direction of plasma plume expansion. This effect has been mainly reported for vacuum depositions of single element targets and is particularly noticeable when the aspect ratio of the beam spot is large. We investigate the flip-over effect in vacuum and at three relevant background-gas pressures for pulsed laser deposition using a La0.4Ca0.6MnO3 target by measuring the thickness dependence of the deposited material as a function of angle. The film thicknesses and compositions are determined by Rutherford backscattering and argon is used to reduce the influence of additional chemical reactions in the plasma. The results show the prevalence of the flip-over effect for all pressures except for the highest, i.e. 1 × 10-1 mbar, where the film thickness is constant for all angles. The composition profiles show noticeable compositional variations of up to 30% with respect to the target material depending on the background gas pressure, the angular location, and the laser spot dimensions.

Optical Emission Spectroscopy of Plasma in Hybrid Pulsed Laser Deposition System

Czech Academy of Sciences Publication Activity Database

Novotný, Michal; Jelínek, Miroslav; Bulíř, Jiří; Lančok, Ján; Jastrabík, Lubomír; Zelinger, Zdeněk

2002-01-01

Roč. 52, Suppl. D (2002), s. 292-298 ISSN 0011-4626 R&D Projects: GA AV ČR IAA1010110 Keywords : optical emission spectroscopy * pulsed laser deposition * RF discharge Subject RIV: CF - Physical ; Theoretical Chemistry Impact factor: 0.311, year: 2002

Boron diffusion into nitrogen doped silicon films for P{sup +} polysilicon gate structures

Energy Technology Data Exchange (ETDEWEB)

Mansour, Farida; Mahamdi, Ramdane; Jalabert, Laurent; Temple-Boyer, Pierre

2003-06-23

This paper deals with the study of the boron diffusion in nitrogen doped silicon (NIDOS) deposited from disilane Si{sub 2}H{sub 6} and ammonia NH{sub 3} for the development of P{sup +} polysilicon gate metal oxide semiconductor (MOS) devices. NIDOS films with varied nitrogen content have been boron implanted, then annealed and finally analysed by secondary ion mass spectroscopy (SIMS). In order to simulate the experimental SIMS of boron concentration profiles in the NIDOS films, a model adapted to the particular conditions of the samples elaboration, i.e. the very high boron concentration and the nitrogen content, has been established. The boron diffusion reduction in NIDOS films with increasing nitrogen rates has been evidenced by the profiles as well as by the obtained diffusion coefficients, which shows that the nitrogen incorporation reduces the boron diffusion. This has been confirmed by capacitance-voltage (C-V) measurements performed on MOS capacitors: the higher the nitrogen content, the lower the flat-band voltage. Finally, these results demonstrate that the improvement of the gate oxide quality occurs with the suppression of the boron penetration.

Negative permittivity of ZnO thin films prepared from aluminum and gallium doped ceramics via pulsed-laser deposition

DEFF Research Database (Denmark)

Bodea, M. A.; Sbarcea, G.; Naik, G. V.

2013-01-01

Aluminum and gallium doped zinc oxide thin films with negative dielectric permittivity in the near infrared spectral range are grown by pulsed laser deposition. Composite ceramics comprising ZnO and secondary phase Al2O3 or Ga2O3 are employed as targets for laser ablation. Films deposited on glass...

Pulsed laser deposition of Cu-Sn-S for thin film solar cells

DEFF Research Database (Denmark)

Ettlinger, Rebecca Bolt; Crovetto, Andrea; Bosco, Edoardo

Thin films of copper tin sulfide were deposited from a target of the stoichiometry Cu:Sn:S ~1:2:3 using pulsed laser deposition (PLD). Annealing with S powder resulted in films close to the desired Cu2SnS3 stoichiometry although the films remained Sn rich. Xray diffraction showed that the final...... films contained both cubic-phase Cu2SnS3 and orthorhombic-phase SnS...

Raman Microscopic Analysis of Internal Stress in Boron-Doped Diamond

Directory of Open Access Journals (Sweden)

Kevin E. Bennet

2015-05-01

Full Text Available Analysis of the induced stress on undoped and boron-doped diamond (BDD thin films by confocal Raman microscopy is performed in this study to investigate its correlation with sample chemical composition and the substrate used during fabrication. Knowledge of this nature is very important to the issue of long-term stability of BDD coated neurosurgical electrodes that will be used in fast-scan cyclic voltammetry, as potential occurrence of film delaminations and dislocations during their surgical implantation can have unwanted consequences for the reliability of BDD-based biosensing electrodes. To achieve a more uniform deposition of the films on cylindrically-shaped tungsten rods, substrate rotation was employed in a custom-built chemical vapor deposition reactor. In addition to visibly preferential boron incorporation into the diamond lattice and columnar growth, the results also reveal a direct correlation between regions of pure diamond and enhanced stress. Definite stress release throughout entire film thicknesses was found in the current Raman mapping images for higher amounts of boron addition. There is also a possible contribution to the high values of compressive stress from sp2 type carbon impurities, besides that of the expected lattice mismatch between film and substrate.

Influence of operating parameters on the arsenic and boron removal by electrocoagulation

International Nuclear Information System (INIS)

Can, B. Z.; Boncukcuoglu, R.; Bayar, S.; Bayhan, Y.K

2016-01-01

Despite their high boron contents, some boron deposits contain considerable amounts of arsenic. Its toxicology and health hazard also has been reported for many years. In this work arsenic and boron removal from synthetic water was studied on laboratory scale by electrocoagulation using aluminum electrodes. The influence of main operating parameters such as current density, stirring speed, supporting electrolyte type and concentration on the arsenic and boron removal was investigated. Waste water sample was prepared with initial arsenic concentration of 50 mg L/sup -1/ and boron concentration of 1000 mg L/sup -1/. Current density was varied from 0.18 to 4.28 mA cm/sup -2/, stirring speed was varied as 50, 150, 250, 350 rpm, NaCl, KCl and Na/sub 2/SO/sub 4/ were used as supporting electrolyte. The obtained experimental results showed that efficiency of arsenic and boron removal increased with increasing current density. As the current density increases, the potential difference applied to the system also increases the energy consumption. Increasing the supporting electrolyte concentration increased conductivity of solution and decreased energy consumption. The most favorable supporting electrolyte type was NaCl for arsenic and boron removal. The best stirring speed was 150 rpm for arsenic and boron removal. (author)

Nanostructures based in boro nitride thin films deposited by PLD onto Si/Si{sub 3}N{sub 4}/DLC substrate

Energy Technology Data Exchange (ETDEWEB)

Roman, W S; Riascos, H [Grupo Plasma, Laser y Aplicaciones, Universidad Tecnologica de Pereira (Colombia); Caicedo, J C [Grupo de PelIculas Delgadas, Universidad del Valle, Cali (Colombia); Ospina, R [Laboratorio de Plasma, Universidad Nacional de Colombia, sede Manizales (Colombia); Tirado-MejIa, L, E-mail: hriascos@utp.edu.c [Laboratorio de Optoelectronica, Universidad del Quindio (Colombia)

2009-05-01

Diamond-like carbon and boron nitride were deposited like nanostructered bilayer on Si/Si{sub 3}N{sub 4} substrate, both with (100) crystallographic orientation, these films were deposited through pulsed laser technique (Nd: YAG: 8 Jcm{sup -2}, 9ns). Graphite (99.99%) and boron nitride (99.99%) targets used to growth the films in argon atmosphere. The thicknesses of bilayer were determined with a perfilometer, active vibration modes were analyzed using infrared spectroscopy (FTIR), finding bands associated around 1400 cm{sup -1} for B - N bonding and bands around 1700 cm{sup -1} associated with C=C stretching vibrations of non-conjugated alkenes and azometinic groups, respectively. The crystallites of thin films were analyzed using X-ray diffraction (XRD) and determinated the h-BN (0002), alpha-Si{sub 3}N{sub 4} (101) phases. The aim of this study is to relate the dependence on physical and chemical characteristics of the system Si/Si{sub 3}N{sub 4}/DLC/BN with gas pressure adjusted at the 1.33, 2.67 and 5.33 Pa values.

Development of the process of boron electrophoresis deposition on aluminum substate to be used in the construction of neutron detectors

International Nuclear Information System (INIS)

Oliveira Sampa, M.H. de; Vinhas, L.A.

1989-11-01

Process of baron electrophoresis depositon on large areas of aluminum substrates was developed with the aim of using them in the construction of neutron detectors. After definition and optimization of the boron electrophoresis parameters, depositions of 10 B on aluminium cylinders were performed and used as electrodes in gamma compensated and non-compensated ionization chambers and in proportional detectors. Prototypers of ionization chambers were designed, built and assembled at the Departinent for Engineering and Industry Application (TE) of the Instituto de Pesquisas Energeticas e Nucleares (IPEN), and submited for characterization tests at IEA-R1 reactor. They fully met the technical specifications of the projects. (author) [pt

Sorbitol as an efficient reducing agent for laser-induced copper deposition

Science.gov (United States)

Kochemirovsky, V. A.; Logunov, L. S.; Safonov, S. V.; Tumkin, I. I.; Tver'yanovich, Yu. S.; Menchikov, L. G.

2012-10-01

We have pioneered in revealing the fact that sorbitol may be used as an efficient reducing agent in the process of laser-induced copper deposition from solutions; in this case, it is possible to obtain copper lines much higher quality than by using conventional formalin.

Pulsed-laser ablation of co-deposits on JT-60 graphite tile

International Nuclear Information System (INIS)

Sakawa, Youichi; Watanabe, Daisuke; Shibahara, Takahiro; Sugiyama, Kazuyoshi; Tanabe, Tetsuo

2007-01-01

Pulsed laser ablation of the co-deposits on a JT-60 open-divertor tile using the fourth harmonic of a 20 ps-Nd: YAG laser has been investigated. With increasing the laser intensity, three regions, non-ablation region (NAR), weak-ablation region (WAR), and strong-ablation region (SAR) were distinguished. Transition from NAR to WAR and WAR to SAR occurred at the threshold laser intensity for laser ablation and that for strong ionization of carbon atoms, respectively. The ablation accompanied desorption of H 2 and C 2 H 2 , with minor contribution of other hydrocarbons, while production of H 2 O was small. In NAR and WAR the number of the hydrogen desorbed by the laser irradiation was less than that of hydrogen retained in the ablated volume, while in SAR it was much larger, owing to thermal desorption of hydrogen gas from the region surrounding the ablated volume. For the ablative removal of hydrogen isotopes, SAR is more desirable because of higher removal efficiency and less production of hydrocarbons

Pulsed-laser ablation of co-deposits on JT-60 graphite tile

Energy Technology Data Exchange (ETDEWEB)

Sakawa, Youichi [Institute of Laser Engineering, Osaka University, Yamadaoka, Suita, Osaka 565-0871 (Japan)]. E-mail: sakawa-y@ile.osaka-u.ac.jp; Watanabe, Daisuke [Graduate School of Engineering, Nagoya University, Chikusa-ku, Nagoya, Aichi 464-8603 (Japan); Shibahara, Takahiro [Graduate School of Engineering, Nagoya University, Chikusa-ku, Nagoya, Aichi 464-8603 (Japan); Sugiyama, Kazuyoshi [Interdisciplinary School of Engineering Science, Kyushu University, Fukuoka, Fukuoka 812-8581 (Japan); Tanabe, Tetsuo [Interdisciplinary School of Engineering Science, Kyushu University, Fukuoka, Fukuoka 812-8581 (Japan)

2007-08-01

Pulsed laser ablation of the co-deposits on a JT-60 open-divertor tile using the fourth harmonic of a 20 ps-Nd: YAG laser has been investigated. With increasing the laser intensity, three regions, non-ablation region (NAR), weak-ablation region (WAR), and strong-ablation region (SAR) were distinguished. Transition from NAR to WAR and WAR to SAR occurred at the threshold laser intensity for laser ablation and that for strong ionization of carbon atoms, respectively. The ablation accompanied desorption of H{sub 2} and C{sub 2}H{sub 2}, with minor contribution of other hydrocarbons, while production of H{sub 2}O was small. In NAR and WAR the number of the hydrogen desorbed by the laser irradiation was less than that of hydrogen retained in the ablated volume, while in SAR it was much larger, owing to thermal desorption of hydrogen gas from the region surrounding the ablated volume. For the ablative removal of hydrogen isotopes, SAR is more desirable because of higher removal efficiency and less production of hydrocarbons.

The flip-over effect in pulsed laser deposition: Is it relevant at high background gas pressures?

Energy Technology Data Exchange (ETDEWEB)

Ojeda-G-P, Alejandro [Paul Scherrer Institut, General Energy Research Department, 5232 Villigen-PSI (Switzerland); Schneider, Christof W., E-mail: christof.schneider@psi.ch [Paul Scherrer Institut, General Energy Research Department, 5232 Villigen-PSI (Switzerland); Döbeli, Max [Ion Beam Physics, ETH Zurich, CH-8093 Zurich (Switzerland); Lippert, Thomas; Wokaun, Alexander [Paul Scherrer Institut, General Energy Research Department, 5232 Villigen-PSI (Switzerland)

2015-12-01

Highlights: • The flip-over effect in PLD is observed up to high deposition pressures. • Consistent congruent transfer of the target composition is generally not correct. • The choice of deposition pressure can change the film composition strongly. • Large compositional changes appear at high off-axis angles and large spot sizes. - Abstract: In pulsed laser deposition the use of a rectangular or elliptical beam spot with a non 1:1 aspect ratio leads to the so called flip-over effect. Here, the longest dimension of the laser spot results in the shortest direction of plasma plume expansion. This effect has been mainly reported for vacuum depositions of single element targets and is particularly noticeable when the aspect ratio of the beam spot is large. We investigate the flip-over effect in vacuum and at three relevant background-gas pressures for pulsed laser deposition using a La{sub 0.4}Ca{sub 0.6}MnO{sub 3} target by measuring the thickness dependence of the deposited material as a function of angle. The film thicknesses and compositions are determined by Rutherford backscattering and argon is used to reduce the influence of additional chemical reactions in the plasma. The results show the prevalence of the flip-over effect for all pressures except for the highest, i.e. 1 × 10{sup −1} mbar, where the film thickness is constant for all angles. The composition profiles show noticeable compositional variations of up to 30% with respect to the target material depending on the background gas pressure, the angular location, and the laser spot dimensions.

Deposition of Methylammonium Lead Triiodide by Resonant Infrared Matrix-Assisted Pulsed Laser Evaporation

Science.gov (United States)

Barraza, E. Tomas; Dunlap-Shohl, Wiley A.; Mitzi, David B.; Stiff-Roberts, Adrienne D.

2018-02-01

Resonant infrared matrix-assisted pulsed laser evaporation (RIR-MAPLE) was used to deposit the metal-halide perovskite (MHP) CH3NH3PbI3 (methylammonium lead triiodide, or MAPbI), creating phase-pure films. Given the moisture sensitivity of these crystalline, multi-component organic-inorganic hybrid materials, deposition of MAPbI by RIR-MAPLE required a departure from the use of water-based emulsions as deposition targets. Different chemistries were explored to create targets that properly dissolved MAPbI components, were stable under vacuum conditions, and enabled resonant laser energy absorption. Secondary phases and solvent contamination in the resulting films were studied through Fourier transform infrared (FTIR) absorbance and x-ray diffraction (XRD) measurements, suggesting that lingering excess methylammonium iodide (MAI) and low-vapor pressure solvents can distort the microstructure, creating crystalline and amorphous non-perovskite phases. Thermal annealing of films deposited by RIR-MAPLE allowed for excess solvent to be evaporated from films without degrading the MAPbI structure. Further, it was demonstrated that RIR-MAPLE does not require excess MAI to create stoichiometric films with optoelectronic properties, crystal structure, and film morphology comparable to films created using more established spin-coating methods for processing MHPs. This work marks the first time a MAPLE-related technique was used to deposit MHPs.

Production of porous PTFE-Ag composite thin films by pulsed laser deposition

International Nuclear Information System (INIS)

Kecskeméti, Gabriella; Hopp, Béla; Smausz, Tomi; Tóth, Zsolt; Szabó, Gábor

2012-01-01

The suitability of pulsed laser deposition technique for preparation of polytetrafluoroethylene (PTFE) and silver (Ag) composite thin films was demonstrated. Disk-shaped targets combined from silver and Teflon with various percentages were ablated with pulses of an ArF excimer laser. The chemical composition of the deposited layers was estimated based on deposition rates determined for the pure PTFE and Ag films. EDX and SEM analyses using secondary electron and backscattered electron images proved that the morphology of the layers is determined by the PTFE which is the main constituent and it is transferred mostly in form of grains and clusters forming a sponge-like structure with high specific surface. The Ag content is distributed over the surface of the PTFE structure. Contact angle measurements showed that with increasing the amount of Ag in the deposited layers the surface significantly enhanced the wetting properties. Conductivity experiments demonstrated that when the average silver content of the layers was increased from 0.16 to 3.28 wt% the resistance of our PTFE-Ag composite films decreased with about three orders of magnitudes (from ∼10 MΩ to ∼10 kΩ). The properties of these films suggest as being a good candidate for future electrochemical sensor applications.

Study of the effects of focused high-energy boron ion implantation in diamond

Science.gov (United States)

Ynsa, M. D.; Agulló-Rueda, F.; Gordillo, N.; Maira, A.; Moreno-Cerrada, D.; Ramos, M. A.

2017-08-01

Boron-doped diamond is a material with a great technological and industrial interest because of its exceptional chemical, physical and structural properties. At modest boron concentrations, insulating diamond becomes a p-type semiconductor and at higher concentrations a superconducting metal at low temperature. The most conventional preparation method used so far, has been the homogeneous incorporation of boron doping during the diamond synthesis carried out either with high-pressure sintering of crystals or by chemical vapour deposition (CVD) of films. With these methods, high boron concentration can be included without distorting significantly the diamond crystalline lattice. However, it is complicated to manufacture boron-doped microstructures. A promising alternative to produce such microstructures could be the implantation of focused high-energy boron ions, although boron fluences are limited by the damage produced in diamond. In this work, the effect of focused high-energy boron ion implantation in single crystals of diamond is studied under different irradiation fluences and conditions. Micro-Raman spectra of the sample were measured before and after annealing at 1000 °C as a function of irradiation fluence, for both superficial and buried boron implantation, to assess the changes in the diamond lattice by the creation of vacancies and defects and their degree of recovery after annealing.

Novel semiconducting boron carbide/pyridine polymers for neutron detection at zero bias

Energy Technology Data Exchange (ETDEWEB)

Echeverria, Elena; Enders, A.; Dowben, P.A. [University of Nebraska-Lincoln, Department of Physics and Astronomy, Lincoln, NE (United States); James, Robinson; Chiluwal, Umesh; Gapfizi, Richard; Tae, Jae-Do; Driver, M. Sky; Kelber, Jeffry A. [University of North Texas, Department of Chemistry, Denton, TX (United States); Pasquale, Frank L. [University of North Texas, Department of Chemistry, Denton, TX (United States); Lam Research Corporation, PECVD Business Unit, Tualatin, OR (United States); Colon Santana, Juan A. [Center for Energy Sciences Research, Lincoln, NE (United States)

2014-09-19

Thin films containing aromatic pyridine moieties bonded to boron, in the partially dehydrogenated boron-rich icosahedra (B{sub 10}C{sub 2}H{sub X}), prove to be an effective material for neutron detection applications when deposited on n-doped (100) silicon substrates. The characteristic I-V curves for the heterojunction diodes exhibit strong rectification and largely unperturbed normalized reverse bias leakage currents with increasing pyridine content. The neutron capture generated pulses from these heterojunction diodes were obtained at zero bias voltage although without the signatures of complete electron-hole collection. These results suggest that modifications to boron carbide may result in better neutron voltaic materials. (orig.)

Laser Deposition of Polymer Nanocomposite Thin Films and Hard Materials and Their Optical Characterization

Science.gov (United States)

2013-12-05

visible light on instruments such as microscope tips and micro- surgical tools. Hard carbon known as diamond-like carbon films produced by pulsed laser ...visible (610 nm) LED source and a supplemental infra-red 980-nm laser diode (for the studies of the upconversion fluorescence). The basic package...5/2013 Final Performance Report 15 Sep 2012- 14 Sep 2013 LASER DEPOSITION OF POLYMER NANOCOMPOSITE THIN FILMS AND HARD MATERIALS AND THEIR OPTICAL

Synthesis and characterization of titanium dioxide thin films deposited by laser ablation

International Nuclear Information System (INIS)

Escobar A, L.; Camps C, E.; Falcon B, T.; Carapia M, L.; Haro P, E.; Camacho L, M.A.

2000-01-01

In this work are presented the results obtained when TiO 2 thin films were deposited using the laser ablation technique. Thin films were deposited at different substrate temperatures, and different oxygen pressures, with the purpose of studying the influence of this deposit parameters in the structural characteristics of the films obtained. The structural characterization was realized through Raman Spectroscopy and X-ray Diffraction (XRD), the surface morphology of the layers deposited was verified by Scanning Electron Microscopy (Sem). The results show that the films obtained are of TiO 2 in rutile phase, getting this at low substrate temperatures, its morphology shows a soft surface with some spattered particles and good adherence. (Author)

Pulsed-laser deposition of smooth thin films of Er, Pr and Nd doped glasses

Energy Technology Data Exchange (ETDEWEB)

Epurescu, G. [National Institute for Laser, Plasma and Radiation Physics, Atomistilor 409, P.O. Box MG 16, RO- 77125, Bucharest-Magurele (Romania)], E-mail: george@nipne.ro; Vlad, A. [National Institute for Laser, Plasma and Radiation Physics, Atomistilor 409, P.O. Box MG 16, RO- 77125, Bucharest-Magurele (Romania); Institut fuer Angewandte Physik, Johannes-Kepler-Universitaet Linz, A-4040 Linz (Austria); Bodea, M.A. [Institut fuer Angewandte Physik, Johannes-Kepler-Universitaet Linz, A-4040 Linz (Austria); Vasiliu, C. [National Institute for Optoelectronics INOE 2000, Atomistilor 1, P.O. Box MG 05, 077125 Bucharest-Magurele (Romania); Dumitrescu, O. [University Politehnica of Bucharest, Faculty of Industrial Chemistry, Science and Engineering of Oxide Materials Department, Polizu Str. 1, sect. 1, Bucharest (Romania); Niciu, H. [National Institute of Glass, Department for Laser Glass Technology, 47 Th. Pallady Str., Sect.3, Bucharest (Romania); Elisa, M. [National Institute for Optoelectronics INOE 2000, Atomistilor 1, P.O. Box MG 05, 077125 Bucharest-Magurele (Romania); Siraj, K.; Pedarnig, J.D.; Baeuerle, D. [Institut fuer Angewandte Physik, Johannes-Kepler-Universitaet Linz, A-4040 Linz (Austria); Filipescu, M.; Nedelcea, A. [National Institute for Laser, Plasma and Radiation Physics, Atomistilor 409, P.O. Box MG 16, RO- 77125, Bucharest-Magurele (Romania); Galca, A.C. [National Institute of Materials Physics, Atomistilor 105bis, P.O. Box MG 07, RO- 77125, Magurele (Romania); Grigorescu, C.E.A. [National Institute for Optoelectronics INOE 2000, Atomistilor 1, P.O. Box MG 05, 077125 Bucharest-Magurele (Romania); Dinescu, M. [National Institute for Laser, Plasma and Radiation Physics, Atomistilor 409, P.O. Box MG 16, RO- 77125, Bucharest-Magurele (Romania)

2009-03-01

Thin films of complex oxides have been obtained by pulsed-laser deposition (PLD) from glass targets belonging to the system Li{sub 2}O-Al{sub 2}O{sub 3}-P{sub 2}O{sub 5}-(RE){sub 2}O{sub 3}, with RE = Nd, Pr, Er. The films were deposited on quartz, silicon and ITO/glass substrates using a F{sub 2} laser ({lambda} = 157 nm, {iota} {approx} 20 ns) for ablation in vacuum. The structural, morphological and optical properties of the oxide films were investigated through IR and UV-VIS spectroscopy, Atomic Force Microscopy (AFM), Scanning Electron Microscopy, Energy Dispersive X-ray Spectroscopy (SEM-EDX) and Spectroscopic Ellipsometry. The laser wavelength was found to be the key parameter to obtain thin films with very smooth surface. In this way new possibilities are opened to grow multilayer structures for photonic applications.

Pulsed laser deposition and characterisation of thin superconducting films

Energy Technology Data Exchange (ETDEWEB)

Morone, A [CNR, zona industriale di Tito Scalo, Potenza (Italy). Istituto per i Materiali Speciali

1996-09-01

Same concepts on pulsed laser deposition of thin films will be discussed and same examples of high transition temperature (HTc) BiSrCaCuO (BISCO) and low transition temperature NbN/MgO/NbN multilayers will be presented. X-ray and others characterizations of these films will be reported and discussed. Electrical properties of superconducting thin films will be realized as a function of structural and morphological aspect.

Morphological and crystalline characterization of pulsed laser deposited pentacene thin films for organic transistor applications

Science.gov (United States)

Pereira, Antonio; Bonhommeau, Sébastien; Sirotkin, Sergey; Desplanche, Sarah; Kaba, Mamadouba; Constantinescu, Catalin; Diallo, Abdou Karim; Talaga, David; Penuelas, Jose; Videlot-Ackermann, Christine; Alloncle, Anne-Patricia; Delaporte, Philippe; Rodriguez, Vincent

2017-10-01

We show that high-quality pentacene (P5) thin films of high crystallinity and low surface roughness can be produced by pulsed laser deposition (PLD) without inducing chemical degradation of the molecules. By using Raman spectroscopy and X-ray diffraction measurements, we also demonstrate that the deposition of P5 on Au layers result in highly disordered P5 thin films. While the P5 molecules arrange within the well-documented 1.54-nm thin-film phase on high-purity fused silica substrates, this ordering is indeed destroyed upon introducing an Au interlayer. This observation may be one explanation for the low electrical performances measured in P5-based organic thin film transistors (OTFTs) deposited by laser-induced forward transfer (LIFT).

Ammonium-tungstate-promoted growth of boron nitride nanotubes

Science.gov (United States)

E, Songfeng; Li, Chaowei; Li, Taotao; Geng, Renjie; Li, Qiulong; Lu, Weibang; Yao, Yagang

2018-05-01

Ammonium tungstate ((NH4)10W12O41 · xH2O) is a kind of oxygen-containing ammonium salt. The following study proves that it can be successfully used as a metal oxide alternative to produce boron oxide (B2O2) by oxidizing boron (B) in a traditional boron oxide chemical vapor deposition (BOCVD) process. This special oxidant promotes the simplistic fabrication of boron nitride nanotubes (BNNTs) in a conventional horizontal tube furnace, an outcome which may have resulted from its strong oxidizability. The experimental results demonstrate that the mole ratio of B and (NH4)10W12O41 · xH2O is a key parameter in determining the formation, quality and quantity of BNNTs when stainless steel is employed as a catalyst. We also found that Mg(NO3)2 and MgO nanoparticles (NPs) can be used as catalysts to grow BNNTs with the same precursor. The BNNTs obtained from the Mg(NO3)2 catalyst were straighter than those obtained from the MgO NP catalyst. This could have been due to the different physical forms of the catalysts that were used.

Photoluminescence of Eu-doped LiYF4 thin films grown by pulsed laser deposition and matrix-assisted pulsed laser evaporation

International Nuclear Information System (INIS)

Stokker-Cheregi, F; Matei, A; Dinescu, M; Secu, C E; Secu, M

2014-01-01

Matrix-assisted pulsed laser evaporation (MAPLE) has been investigated as an alternative to the pulsed laser deposition (PLD) technique for Eu 3+ -doped crystalline LiYF 4 thin-films deposition. MAPLE assumes laser ablation of a frozen target made of the material of interest diluted in a solvent, rather than that of a bulk target, of either pressed powder or single crystal, used in the case of PLD. Our approach stems from the assumption that laser ablation of a frozen dilute target would result in thin films with improved morphology, as compared to PLD. Indeed, we find that roughness values of samples obtained by the MAPLE technique are four times lower than in the case of PLD. A lower transmittance was noticed for PLD obtained layers with respect to those grown by MAPLE due to strong scattering of light by the morphological defects. Photoluminescence spectra are showing characteristic Eu 3+ -ion luminescence bands at 578, 591, 612, 650 and 698 nm ( 5 D 0  →  7 F J ); crystal field splitting of the bands indicates dopant ions incorporation in the host material during transfer by either PLD or MAPLE. (paper)

The properties of Ge quantum rings deposited by pulsed laser deposition.

Science.gov (United States)

Ma, Xiying

2010-07-01

SiGe ring-shape nanostructures have attracted much research interest because of the interesting morphology, mechanical, and electromagnetic properties. In this paper, we present the planar Ge nanorings with well-defined sharp edges self-assembled on Si (100) matrix prepared with pulsed laser deposition (PLD) in the present of Ar gas. The transforming mechanism of the droplets is discussed, which a dynamic deformation model has been developed to simulate the self-transforming process of the droplets. The rings were found to be formed in two steps: from droplets to cones and from cones to rings via an elastic self-deforming process, which were likely to be driven by the lateral strain of Ge/Si layers and the surface tension.

Resonant infrared laser deposition of polymer-nanocomposite materials for optoelectronic applications

Science.gov (United States)

Park, Hee K.; Schriver, Kenneth E.; Haglund, Richard F.

2011-11-01

Polymers find a number of potentially useful applications in optoelectronic devices. These include both active layers, such as light-emitting polymers and hole-transport layers, and passive layers, such as polymer barrier coatings and light-management films. This paper reports the experimental results for polymer films deposited by resonant infrared matrix-assisted pulsed laser evaporation (RIR-MAPLE) and resonant infrared pulsed laser deposition (RIR-PLD) for commercial optoelectronic device applications. In particular, light-management films, such as anti-reflection coatings, require refractive-index engineering of a material. However, refractive indices of polymers fall within a relatively narrow range, leading to major efforts to develop both low- and high-refractive-index polymers. Polymer nanocomposites can expand the range of refractive indices by incorporating low- or high-refractive-index nanoscale materials. RIR-MAPLE is an excellent technique for depositing polymer-nanocomposite films in multilayer structures, which are essential to light-management coatings. In this paper, we report our efforts to engineer the refractive index of a barrier polymer by combining RIR-MAPLE of nanomaterials (for example, high refractive-index TiO2 nanoparticles) and RIR-PLD of host polymer. In addition, we report on the properties of organic and polymer films deposited by RIR-MAPLE and/or RIR-PLD, such as Alq3 [tris(8-hydroxyquinoline) aluminum] and PEDOT:PSS [poly(3,4-ethylenedioxythiophene): poly(styrenesulfonate)]. Finally, the challenges and potential for commercializing RIR-MAPLE/PLD, such as industrial scale-up issues, are discussed.

Ultra-thin Cu2ZnSnS4 solar cell by pulsed laser deposition

DEFF Research Database (Denmark)

Cazzaniga, Andrea Carlo; Crovetto, Andrea; Yan, Chang

2017-01-01

We report on the fabrication of a 5.2% efficiency Cu2ZnSnS4 (CZTS) solar cell made by pulsed laser deposition (PLD) featuring an ultra-thin absorber layer (less than 450 nm). Solutions to the issues of reproducibility and micro-particulate ejection often encountered with PLD are proposed. At the ......We report on the fabrication of a 5.2% efficiency Cu2ZnSnS4 (CZTS) solar cell made by pulsed laser deposition (PLD) featuring an ultra-thin absorber layer (less than 450 nm). Solutions to the issues of reproducibility and micro-particulate ejection often encountered with PLD are proposed...

Excimer laser processing of inkjet-printed and sputter-deposited transparent conducting SnO2:Sb for flexible electronics

International Nuclear Information System (INIS)

Cranton, Wayne M.; Wilson, Sharron L.; Ranson, Robert; Koutsogeorgis, Demosthenes C.; Chi Kuangnan; Hedgley, Richard; Scott, John; Lipiec, Stephen; Spiller, Andrew; Speakman, Stuart

2007-01-01

The feasibility of low-temperature fabrication of transparent electrode elements from thin films of antimony-doped tin oxide (SnO 2 :Sb, ATO) has been investigated via inkjet printing, rf magnetron sputtering and post-deposition excimer laser processing. Laser processing of thin films on both glass and plastic substrates was performed using a Lambda Physik 305i excimer laser, with fluences in the range 20-100 mJ cm -2 reducing sheet resistance from as-deposited values by up to 3 orders of magnitude. This is consistent with TEM analysis of the films that shows a densification of the upper 200 nm of laser-processed regions

Thermoelectric properties of boron and boron phosphide CVD wafers

Energy Technology Data Exchange (ETDEWEB)

Kumashiro, Y.; Yokoyama, T.; Sato, A.; Ando, Y. [Yokohama National Univ. (Japan)

1997-10-01

Electrical and thermal conductivities and thermoelectric power of p-type boron and n-type boron phosphide wafers with amorphous and polycrystalline structures were measured up to high temperatures. The electrical conductivity of amorphous boron wafers is compatible to that of polycrystals at high temperatures and obeys Mott`s T{sup -{1/4}} rule. The thermoelectric power of polycrystalline boron decreases with increasing temperature, while that of amorphous boron is almost constant in a wide temperature range. The weak temperature dependence of the thermal conductivity of BP polycrystalline wafers reflects phonon scattering by grain boundaries. Thermal conductivity of an amorphous boron wafer is almost constant in a wide temperature range, showing a characteristic of a glass. The figure of merit of polycrystalline BP wafers is 10{sup -7}/K at high temperatures while that of amorphous boron is 10{sup -5}/K.

LARGE AREA FILTERED ARC DEPOSITION OF CARBON AND BORON BASED HARD COATINGS

Energy Technology Data Exchange (ETDEWEB)

Bhattacharya, Rabi S.

2003-12-05

This document is a final report covering work performed under Contract No. DE-FG02-99ER82911 from the Department of Energy under a SBIR Phase II Program. Wear resistant, hard coatings can play a vital role in many engineering applications. The primary goal of this project was to develop coatings containing boron and carbon with hardness greater than 30 GPa and evaluate these coatings for machining applications. UES has developed a number of carbon and boron containing coatings with hardness in the range of 34 to 65 GPa using a combination of filtered cathodic arc and magnetron sputtering. The boron containing coatings were based on TiB2, TiBN, and TiBCN, while the carbon containing coatings ere TiC+C and hydrogen free diamond-like-carbon. Machining tests were performed with single and multilayer coated tools. The turning and milling tests were run at TechSolve Inc., under a subcontract at Ohio State University. Significant increases in tool lives were realized in end milling of H-13 die steel (8X) and titanium alloy (80%) using the TiBN coating. A multilayer TiBN/TiN performed the best in end-milling of highly abrasive Al-Si alloys. A 40% increase in life over the TiAlN benchmark coating was found. Further evaluations of these coatings with commercialization partners are currently in progress.

Chemical Analysis of Impurity Boron Atoms in Diamond Using Soft X-ray Emission Spectroscopy

Energy Technology Data Exchange (ETDEWEB)

Muramatsu, Yasuji; Iihara, Junji; Takebe, Toshihiko; Denlinger, Jonathan D.

2008-03-29

To analyze the local structure and/or chemical states of boron atoms in boron-doped diamond, which can be synthesized by the microwave plasma-assisted chemical vapor deposition method (CVD-B-diamond) and the temperature gradient method at high pressure and high temperature (HPT-B-diamond), we measured the soft X-ray emission spectra in the CK and BK regions of B-diamonds using synchrotron radiation at the Advanced Light Source (ALS). X-ray spectral analyses using the fingerprint method and molecular orbital calculations confirm that boron atoms in CVD-B-diamond substitute for carbon atoms in the diamond lattice to form covalent B-C bonds, while boron atoms in HPT-B-diamond react with the impurity nitrogen atoms to form hexagonal boron nitride. This suggests that the high purity diamond without nitrogen impurities is necessary to synthesize p-type B-diamond semiconductors.

Growing of synthetic diamond boron-doped films for analytical applications

International Nuclear Information System (INIS)

Barros, Rita de Cassia Mendes de; Suarez-Iha, Maria Encarnacion Vazquez; Corat, Evaldo Jose; Iha, Koshun

1999-01-01

Chemical vapor deposition (CVD) technology affords the possibility of producing synthetic diamond film electrodes, with several advantageous properties due the unique characteristics of diamond. In this work, we present the study of boron-doped diamond films growth on molybdenum and silicon substrates, using boron trioxide as dopant in a filament assisted CVD reactor. The objective was to obtain semiconductor diamond for use as electrode. The samples were characterized by scanning electron microscopy and Raman spectroscopy to confirm morphology and doping levels. We have assembled electrodes with the various samples, Pt, Mo, Si and diamond, by utilizing brass and left as base materials. The electrodes were tested in neutralization potentiometric titrations for future use in electroanalysis. Boron-doped electrodes have very good performance compared with Pt, widely used in analytical chemistry. (author)

Highly Sensitive TGA Diagnosis of Thermal Behaviour of Laser-Deposited Materials

Czech Academy of Sciences Publication Activity Database

Galíková, Anna; Pola, Josef

2008-01-01

Roč. 473, 1-2 (2008), s. 54-60 ISSN 0040-6031 R&D Projects: GA AV ČR IAA400720619 Institutional research plan: CEZ:AV0Z40720504 Keywords : thermogravimetry * laser-deposited materials * mass spectroscopy Subject RIV: CF - Physical ; Theoretical Chemistry Impact factor: 1.659, year: 2008

Laser deposition and direct-writing of thermoelectric misfit cobaltite thin films

Science.gov (United States)

Chen, Jikun; Palla-Papavlu, Alexandra; Li, Yulong; Chen, Lidong; Shi, Xun; Döbeli, Max; Stender, Dieter; Populoh, Sascha; Xie, Wenjie; Weidenkaff, Anke; Schneider, Christof W.; Wokaun, Alexander; Lippert, Thomas

2014-06-01

A two-step process combining pulsed laser deposition of calcium cobaltite thin films and a subsequent laser induced forward transfer as micro-pixel is demonstrated as a direct writing approach of micro-scale thin film structures for potential applications in thermoelectric micro-devices. To achieve the desired thermo-electric properties of the cobaltite thin film, the laser induced plasma properties have been characterized utilizing plasma mass spectrometry establishing a direct correlation to the corresponding film composition and structure. The introduction of a platinum sacrificial layer when growing the oxide thin film enables a damage-free laser transfer of calcium cobaltite thereby preserving the film composition and crystallinity as well as the shape integrity of the as-transferred pixels. The demonstrated direct writing approach simplifies the fabrication of micro-devices and provides a large degree of flexibility in designing and fabricating fully functional thermoelectric micro-devices.

High quality superconducting titanium nitride thin film growth using infrared pulsed laser deposition

Science.gov (United States)

Torgovkin, A.; Chaudhuri, S.; Ruhtinas, A.; Lahtinen, M.; Sajavaara, T.; Maasilta, I. J.

2018-05-01

Superconducting titanium nitride (TiN) thin films were deposited on magnesium oxide, sapphire and silicon nitride substrates at 700 °C, using a pulsed laser deposition (PLD) technique, where infrared (1064 nm) pulses from a solid-state laser were used for the ablation from a titanium target in a nitrogen atmosphere. Structural studies performed with x-ray diffraction showed the best epitaxial crystallinity for films deposited on MgO. In the best films, superconducting transition temperatures, T C, as high as 4.8 K were observed, higher than in most previous superconducting TiN thin films deposited with reactive sputtering. A room temperature resistivity down to ∼17 μΩ cm and residual resistivity ratio up to 3 were observed in the best films, approaching reported single crystal film values, demonstrating that PLD is a good alternative to reactive sputtering for superconducting TiN film deposition. For less than ideal samples, the suppression of the film properties were correlated mostly with the unintended incorporation of oxygen (5–10 at%) in the film, and for high oxygen content films, vacuum annealing was also shown to increase the T C. On the other hand, superconducting properties were surprisingly insensitive to the nitrogen content, with high quality films achieved even in the highly nitrogen rich, Ti:N = 40/60 limit. Measures to limit oxygen exposure during deposition must be taken to guarantee the best superconducting film properties, a fact that needs to be taken into account with other deposition methods, as well.

Method of accurate thickness measurement of boron carbide coating on copper foil

Science.gov (United States)

Lacy, Jeffrey L.; Regmi, Murari

2017-11-07

A method is disclosed of measuring the thickness of a thin coating on a substrate comprising dissolving the coating and substrate in a reagent and using the post-dissolution concentration of the coating in the reagent to calculate an effective thickness of the coating. The preferred method includes measuring non-conducting films on flexible and rough substrates, but other kinds of thin films can be measure by matching a reliable film-substrate dissolution technique. One preferred method includes determining the thickness of Boron Carbide films deposited on copper foil. The preferred method uses a standard technique known as inductively coupled plasma optical emission spectroscopy (ICPOES) to measure boron concentration in a liquid sample prepared by dissolving boron carbide films and the Copper substrates, preferably using a chemical etch known as ceric ammonium nitrate (CAN). Measured boron concentration values can then be calculated.

The Influence of the Powder Stream on High-Deposition-Rate Laser Metal Deposition with Inconel 718

Directory of Open Access Journals (Sweden)

Chongliang Zhong

2017-10-01

Full Text Available For the purpose of improving the productivity of laser metal deposition (LMD, the focus of current research is set on increasing the deposition rate, in order to develop high-deposition-rate LMD (HDR-LMD. The presented work studies the effects of the powder stream on HDR-LMD with Inconel 718. Experiments have been designed and conducted by using different powder feeding nozzles—a three-jet and a coaxial powder feeding nozzle—since the powder stream is mainly determined by the geometry of the powder feeding nozzle. After the deposition trials, metallographic analysis of the samples has been performed. The laser intensity distribution (LID and the powder stream intensity distribution (PID have been characterized, based on which the processes have been simulated. Finally, for verifying and correcting the used models for the simulation, the simulated results have been compared with the experimental results. Through the conducted work, suitable boundary conditions for simulating the process with different powder streams has been determined, and the effects of the powder stream on the process have also been determined. For a LMD process with a three-jet nozzle a substantial part of the powder particles that hit the melt pool surface are rebounded; for a LMD process with a coaxial nozzle almost all the particles are caught in the melt pool. This is due to the different particle velocities achieved with the two different nozzles. Moreover, the powder stream affects the heat exchange between the heated particles and the melt pool: a surface boundary condition applies for a powder stream with lower particle velocities, in the experiment provided by a three-jet nozzle, and a volumetric boundary condition applies for a powder stream with higher particle velocities, provided by a coaxial nozzle.

Investigation of droplet formation in pulsed Nd:YAG laser deposition of metals and silicon

Energy Technology Data Exchange (ETDEWEB)

Siew, Wee-Ong; Lee, Wai-Keat; Wong, Hin-Yong; Tou, Teck-Yong [Multimedia University, Faculty of Engineering, Cyberjaya, Selangor (Malaysia); Yong, Thian-Khok [Multimedia University, Faculty of Engineering, Cyberjaya, Selangor (Malaysia); Universiti Tunku Abdul Rahman, Faculty of Engineering and Science, Kuala Lumpur (Malaysia); Yap, Seong-Shan [Multimedia University, Faculty of Engineering, Cyberjaya, Selangor (Malaysia); Norwegian University of Science and Technology, Institute of Physics, Trondheim (Norway)

2010-12-15

In the process of pulsed laser deposition of nickel (Ni) and ruthenium (Ru) thin films, the occurrence of phase explosion in ablation was found to affect the deposition rate and enhance the optical emissions from the plasma plume. Faster thin-film growth rates coincide with the onset of phase explosion as a result of superheating and/or sub-surface boiling which also increased the particulates found on the thin-film surface. These particulates were predominantly droplets which may not be round but flattened and also debris for the case of silicon (Si) ablation. The droplets from Ni and Ru thin films were compared in terms of size distribution and number density for different laser fluences. The origins of these particulates were correlated to the bubble and ripple formations on the targets while the transfer to the thin film surface was attributed to the laser-induced ejection from the targets. (orig.)

Investigation of droplet formation in pulsed Nd:YAG laser deposition of metals and silicon

International Nuclear Information System (INIS)

Siew, Wee-Ong; Lee, Wai-Keat; Wong, Hin-Yong; Tou, Teck-Yong; Yong, Thian-Khok; Yap, Seong-Shan

2010-01-01

In the process of pulsed laser deposition of nickel (Ni) and ruthenium (Ru) thin films, the occurrence of phase explosion in ablation was found to affect the deposition rate and enhance the optical emissions from the plasma plume. Faster thin-film growth rates coincide with the onset of phase explosion as a result of superheating and/or sub-surface boiling which also increased the particulates found on the thin-film surface. These particulates were predominantly droplets which may not be round but flattened and also debris for the case of silicon (Si) ablation. The droplets from Ni and Ru thin films were compared in terms of size distribution and number density for different laser fluences. The origins of these particulates were correlated to the bubble and ripple formations on the targets while the transfer to the thin film surface was attributed to the laser-induced ejection from the targets. (orig.)

Optical Properties Dependence with Gas Pressure in AlN Films Deposited by Pulsed Laser Ablation

International Nuclear Information System (INIS)

Perez, J A; Riascos, H; Caicedo, J C; Cabrera, G; Yate, L

2011-01-01

AlN films were deposited by pulsed laser deposition technique (PLD) using an Nd: YAG laser (λ = 1064 nm). The films were deposited in a nitrogen atmosphere as working gas; the target was an aluminum high purity (99.99%). The films were deposited with a laser fluence of 7 J/cm2 for 10 minutes on silicon (100) substrates. The substrate temperature was 300 deg. C and the working pressure was varied from 3 mtorr to 11 mtorr. The thickness measured by profilometer was 150 nm for all films. The crystallinity was observed via XRD pattern, the morphology and composition of the films were studied using scanning electron microscopy (SEM) and Energy Dispersive X-ray analysis (EDX), respectively. The optical reflectance spectra and color coordinates of the films were obtained by optical spectral reflectometry technique in the range of 400 cm-1- 900 cm-1 by an Ocean Optics 2000 spectrophotometer. In this work, a clear dependence of the reflectance, dominant wavelength and color purity was found in terms of the applied pressure to the AlN films. A reduction in reflectance of about 55% when the pressure was increased from 3 mtorr to 11 mtorr was observed. This paper deals with the formation of AlN thin films as promising materials for the integration of SAW devices on Si substrates due to their good piezoelectric properties and the possibility of deposition at low temperature compatible with the manufacturing of Si integrated circuits.

Optical Properties Dependence with Gas Pressure in AlN Films Deposited by Pulsed Laser Ablation

Energy Technology Data Exchange (ETDEWEB)

Perez, J A; Riascos, H [Departamento de Fisica, Universidad Tecnologica de Pereira, Grupo plasma Laser y Aplicaciones A.A 097 (Colombia); Caicedo, J C [Grupo pelIculas delgadas, Universidad del Valle, Cali (Colombia); Cabrera, G; Yate, L, E-mail: jcaicedoangulo@gmail.com [Department de Fisica Aplicada i Optica, Universitat de Barcelona, Catalunya (Spain)

2011-01-01

AlN films were deposited by pulsed laser deposition technique (PLD) using an Nd: YAG laser ({lambda} = 1064 nm). The films were deposited in a nitrogen atmosphere as working gas; the target was an aluminum high purity (99.99%). The films were deposited with a laser fluence of 7 J/cm2 for 10 minutes on silicon (100) substrates. The substrate temperature was 300 deg. C and the working pressure was varied from 3 mtorr to 11 mtorr. The thickness measured by profilometer was 150 nm for all films. The crystallinity was observed via XRD pattern, the morphology and composition of the films were studied using scanning electron microscopy (SEM) and Energy Dispersive X-ray analysis (EDX), respectively. The optical reflectance spectra and color coordinates of the films were obtained by optical spectral reflectometry technique in the range of 400 cm-1- 900 cm-1 by an Ocean Optics 2000 spectrophotometer. In this work, a clear dependence of the reflectance, dominant wavelength and color purity was found in terms of the applied pressure to the AlN films. A reduction in reflectance of about 55% when the pressure was increased from 3 mtorr to 11 mtorr was observed. This paper deals with the formation of AlN thin films as promising materials for the integration of SAW devices on Si substrates due to their good piezoelectric properties and the possibility of deposition at low temperature compatible with the manufacturing of Si integrated circuits.

Effect of scanning speed on laser deposited 17-4PH stainless steel

CSIR Research Space (South Africa)

Bayode, A

2017-02-01

Full Text Available Laser metal deposition (LMD) is one of the additive manufacturing technologies that is used in the production of fully dense parts layer by layer. This innovative manufacturing process has the potential to reduce the weight, time and cost...

Silver-doped layers of implants prepared by pulsed laser deposition

Czech Academy of Sciences Publication Activity Database

Kocourek, Tomáš; Jelínek, Miroslav; Mikšovský, Jan; Jurek, Karel; Čejka, Z.; Kopeček, Jaromír

2013-01-01

Roč. 1, č. 7 (2013), s. 59-61 ISSN 2327-5219 R&D Projects: GA AV ČR KAN300100801 Institutional support: RVO:68378271 Keywords : thin layer * silver * titanium alloy * steel * pulsed laser deposition * adhesion * implant Subject RIV: BM - Solid Matter Physics ; Magnetism http://www.scirp.org/journal/PaperInformation.aspx?paperID=40308#.UvECAfu5dHA

Matrix effects in laser ablation molecular isotopic spectrometry

Energy Technology Data Exchange (ETDEWEB)

Brown, Staci, E-mail: staci.brown@cepast.famu.edu [Department of Physics, Florida A and M University, 2077 E. Paul Dirac Drive, Tallahassee, FL 32310 (United States); Ford, Alan, E-mail: alan.ford@alakaidefense.com [Alakai Defense Systems, 197 Replacement Ave, Suite 102, Fort Leonard Wood, MO 65473 (United States); Akpovo, Charlemagne C., E-mail: charlemagne.akpovo@cepast.famu.edu [Department of Physics, Florida A and M University, 2077 E. Paul Dirac Drive, Tallahassee, FL 32310 (United States); Martinez, Jorge, E-mail: jmartinez@cepast.famu.edu [Department of Physics, Florida A and M University, 2077 E. Paul Dirac Drive, Tallahassee, FL 32310 (United States); Johnson, Lewis, E-mail: lewis@cepast.famu.edu [Department of Physics, Florida A and M University, 2077 E. Paul Dirac Drive, Tallahassee, FL 32310 (United States)

2014-11-01

Recently, it has been shown that laser-induced breakdown spectroscopy (LIBS) can be used for the detection of isotopes of elements via isotopic shifts in diatomic species in a technique known as laser ablation molecular isotopic spectrometry (LAMIS). While LAMIS works quite well for isotopic analysis of pure compounds under optimal conditions, it is desirable for it to be applicable for a variety of compounds and matrices. However, the LIBS plasma emission associated with LAMIS depends on several parameters, including the applied electric field of the laser pulse, the physical properties of the material being investigated, and the presence of additional elements other than the element of interest. In this paper, we address some of the pitfalls arising from these dependencies when using LAMIS for the determination of the relative isotopic abundance of boron-containing materials with varying chemical matrices. - Highlights: • LAMIS usually determines isotopic composition of boron compounds within 3 percent. • LaBO{sub 3} and some boron-containing mixtures yield inaccurate LAMIS results. • Higher laser energy reduces variability but does not remedy poor LAMIS outcomes.

Biological and physical properties of pulsed-laser-deposited zirconia/hydroxyapatite on titanium: in vitro study

Czech Academy of Sciences Publication Activity Database

Teuberová, Z.; Seydlová, M.; Dostálová, T.; Dvořánková, B.; Smetana, K. Jr.; Jelínek, Miroslav; Mašínová, Petra; Kocourek, Tomáš; Kolářová, K.; Wilson, J.

2007-01-01

Roč. 17, č. 1 (2007), s. 45-49 ISSN 1054-660X R&D Projects: GA MZd NR8512 Institutional research plan: CEZ:AV0Z10100522 Keywords : dental implants * hydroxyapatite * titanium * laser deposition * PLD Subject RIV: BH - Optics, Masers, Lasers Impact factor: 0.696, year: 2007

Monolithic Laser Scribed Graphene Scaffold with Atomic Layer Deposited Platinum for Hydrogen Evolution Reaction

KAUST Repository

Nayak, Pranati

2017-09-01

The use of three-dimensional (3D) electrode architectures as scaffolds for conformal deposition of catalysts is an emerging research area with significant potential for electrocatalytic applications. In this study, we report the fabrication of monolithic, self-standing, 3D graphitic carbon scaffold with conformally deposited Pt by atomic layer deposition (ALD) as a hydrogen evolution reaction catalyst. Laser scribing is employed to transform polyimide into 3D porous graphitic carbon, which possesses good electronic conductivity and numerous edge plane sites. This laser scribed graphene (LSG) architecture makes it possible to fabricate monolithic electrocatalyst support without any binders or conductive additives. The synergistic effect between ALD of Pt on 3D network of LSG provides an avenue for minimal yet effective Pt usage, leading to an enhanced HER activity. This strategy establish a general approach for inexpensive and large scale HER device fabrication with minimum catalyst cost.

Monolithic Laser Scribed Graphene Scaffold with Atomic Layer Deposited Platinum for Hydrogen Evolution Reaction

KAUST Repository

Nayak, Pranati; Jiang, Qiu; Kurra, Narendra; Buttner, Ulrich; Wang, Xianbin; Alshareef, Husam N.

2017-01-01

The use of three-dimensional (3D) electrode architectures as scaffolds for conformal deposition of catalysts is an emerging research area with significant potential for electrocatalytic applications. In this study, we report the fabrication of monolithic, self-standing, 3D graphitic carbon scaffold with conformally deposited Pt by atomic layer deposition (ALD) as a hydrogen evolution reaction catalyst. Laser scribing is employed to transform polyimide into 3D porous graphitic carbon, which possesses good electronic conductivity and numerous edge plane sites. This laser scribed graphene (LSG) architecture makes it possible to fabricate monolithic electrocatalyst support without any binders or conductive additives. The synergistic effect between ALD of Pt on 3D network of LSG provides an avenue for minimal yet effective Pt usage, leading to an enhanced HER activity. This strategy establish a general approach for inexpensive and large scale HER device fabrication with minimum catalyst cost.

Deposition of zinc oxide thin films by reactive pulsed laser ablation

Czech Academy of Sciences Publication Activity Database

Bílková, Petra; Zemek, Josef; Mitu, B.; Marotta, V.; Orlando, S.

2006-01-01

Roč. 252, - (2006), s. 4604-4609 ISSN 0169-4332 Grant - others:NATO-CNR Outreach Fellowships Programm 2001(XE) 219.34 Institutional research plan: CEZ:AV0Z10100521 Keywords : reactive pulsed laser deposition * zinc oxide * thin films Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.436, year: 2006

Residual energy deposition in dental enamel during IR laser ablation at 2.79, 2.94, 9.6, and 10.6 μm

Science.gov (United States)

Ragadio, Jerome N.; Lee, Christian K.; Fried, Daniel

2000-03-01

The objective of this study was to measure the residual heat deposition during laser ablation at those IR laser wavelengths best suited for the removal of dental caries. The principal factor limiting the rate of laser ablation of dental hard tissue is the risk of excessive heat accumulation in the tooth, which has the potential for causing damage to the pulp. Optimal laser ablation systems minimize the residual energy deposition in the tooth by transferring deposited laser energy to kinetic and internal energy of ejected tissue components. The residual heat deposition in the tooth was measured at laser wavelengths of 2.79, 2.94, 9.6 and 10.6 micrometer and pulse widths of 150 ns - 150 microsecond(s) . The residual energy was at a minimum for fluences well above the ablation threshold where it saturates at values from 25 - 70% depending on pulse duration and wavelength for the systems investigated. The lowest values of the residual energy were measured for short (less than 20 microseconds) CO2 laser pulses at 9.6 micrometer and for Q-switched erbium laser pulses. This work was supported by NIH/NIDCR R29DE12091 and the Center for Laser Applications in Medicine, DOE DEFG0398ER62576.

Novel doped hydroxyapatite thin films obtained by pulsed laser deposition

International Nuclear Information System (INIS)

Duta, L.; Oktar, F.N.; Stan, G.E.; Popescu-Pelin, G.; Serban, N.; Luculescu, C.; Mihailescu, I.N.

2013-01-01

Highlights: ► HA coatings synthesized by pulsed laser deposition. ► Comparative study of commercial vs. animal origin materials. ► HA coatings of animal origin were rougher and more adherent to substrates. ► Animal origin films can be considered as promising candidates for implant coatings. - Abstract: We report on the synthesis of novel ovine and bovine derived hydroxyapatite thin films on titanium substrates by pulsed laser deposition for a new generation of implants. The calcination treatment applied to produce the hydroxyapatite powders from ovine/bovine bones was intended to induce crystallization and to prohibit the transmission of diseases. The deposited films were characterized by scanning electron microscopy, X-ray diffraction, Fourier transform infrared spectroscopy, and energy dispersive X-ray spectroscopy. Pull-off adherence and profilometry measurements were also carried out. X-ray diffraction ascertained the polycrystalline hydroxyapatite nature of the powders and films. Fourier transform infrared spectroscopy evidenced the vibrational bands characteristic to a hydroxyapatite material slightly carbonated. The micrographs of the films showed a uniform distribution of spheroidal particulates with a mean diameter of ∼2 μm. Pull-off measurements demonstrated excellent bonding strength values between the hydroxyapatite films and the titanium substrates. Because of their physical–chemical properties and low cost fabrication from renewable resources, we think that these new coating materials could be considered as a prospective competitor to synthetic hydroxyapatite used for implantology applications.

Evidence for multiple polytypes of semiconducting boron carbide (C2B10) from electronic structure

International Nuclear Information System (INIS)

Lunca-Popa, Petru; Brand, J I; Balaz, Snjezana; Rosa, Luis G; Boag, N M; Bai Mengjun; Robertson, B W; Dowben, P A

2005-01-01

Boron carbides fabricated via plasma enhanced chemical vapour deposition from different isomeric source compounds with the same C 2 B 10 H 12 closo-icosahedral structure result in materials with very different direct (optical) band gaps. This provides compelling evidence for the existence of multiple polytypes of C 2 B 10 boron carbide and is consistent with electron diffraction results