Development of superconducting tunnel junction as photon counting detector in astronomy; Developpement de jonctions supraconductrices a effet tunnel pour le comptage de photons en astronomie

Energy Technology Data Exchange (ETDEWEB)

Jorel, C

2004-12-15

This work describes the development of S/Al-AlOx-Al/S Superconducting Tunnel Junctions (STJ) to count photons for astronomical applications in the near-infrared. The incoming light energy is converted into excited charges in a superconducting layer (S, either Nb or Ta) with a population proportional to the deposited energy. The photon energy can thus be evaluated by integrating the tunnel current induced in a voltage biased junction at a very low temperature (100 mK). The performance of STJ for light detection is discussed in the first chapter and compared with the best performances obtained with other techniques based on either superconductors. At the beginning of the thesis, a previous manufacturing process made it possible to obtain good quality Nb based junctions and preliminary results for photon counting. The objective of the thesis was to replace Nb as absorber with Ta, an intrinsically more sensitive material, and secondly to develop a new and more efficient manufacturing process. We first focused on the optimization of the Tantalum thin film quality. Structural analysis showed that these films can be grown epitaxially by magnetron sputtering onto an R-plane sapphire substrate heated to 600 Celsius degrees and covered by a thin Nb buffer layer. Electrical transport measurement from room to low temperatures gave excellent Relative Resistive Ratios of about 50 corresponding to mean free path of the order of 100 nm. Then, we conceived an original manufacturing process batch on 3 inch diameter sapphire substrate with five mask levels. These masks made it possible to produce single pixel STJ of different sizes (from 25*25 to 50*50 square microns) and shapes. We also produced multiple junctions onto a common absorber as well as 9-pixel arrays. Thanks to the development of this process we obtained a very large percentage of quality junctions (>90%) with excellent measured normal resistances of a few micro-ohm cm{sup 2} and low leakage currents of the order of one

Stýrinet: Nýsköpun innan Stjórnarráðsins. Nýtt verklag í samstarfi milli stjórnsýslustiga

Directory of Open Access Journals (Sweden)

Héðinn Unnsteinsson

2012-06-01

Full Text Available Í þessari grein er vakin athygli á nýju samskiptaformi sem er að ryðja sér til rúms innan stjórnsýslunnar með tilkomu stefnumörkunarinnar Ísland 2020. Stýrinet (e. governance network er hugtak sem æ fleiri fræðimenn og embættismenn hafa skoðað síðastliðin tíu ár sem mögulegan valkost við stigveldisstjórnsýslu og útvistaða stjórnsýslu, sem varð vinsæl í lok tíunda áratugarins með tilkomu nýsköpunar í ríkisrekstri (New Public Management. Samstarf þvert á ráðuneyti eru ekki ný af nálinni en með stefnuskjalinu Ísland 2020 eru sett fram verkefni sem krefjast annars konar vinnubragða en tíðkast hafa áður innan stjórnsýslunnar. Ísland 2020 hefur ýtt bæði undir samhentari stjórnsýslu með auknu samstarfi en krefst þess jafnframt að starfshópar starfi í anda stýrineta svo að sem mestur árangur megi verða af starfi þeirra. Í greininni er stýrinetskerfi, sem sett var upp innan Stjórnarráðsins og landshlutasamtaka í tengslum við sóknaráætlanir landshluta, skoðað. Tilraun er gerð til að meta hvort stýrinet séu betur til þess fallin en annars konar samstarf til að skila markvissari árangri við lausn verkefna.

Small area silicon diffused junction x-ray detectors

International Nuclear Information System (INIS)

Walton, J.T.; Pehl, R.H.; Larsh, A.E.

1981-10-01

The low temperature performance of silicon diffused junction detectors in the measurement of low energy x-rays is reported. The detectors have an area of 0.04 cm 2 and a thickness of 100 μm. The spectral resolutions of these detectors were found to be in close agreement with expected values indicating that the defects introduced by the high temperature processing required in the device fabrication were not deleteriously affecting the detection of low energy x-rays. Device performance over a temperature range of 77 to 150 0 K is given. These detectors were designed to detect low energy x-rays in the presence of minimum ionizing electrons. The successful application of silicon diffused junction technology to x-ray detector fabrication may facilitate the development of other novel silicon x-ray detector designs

Small area silicon diffused junction X-ray detectors

Science.gov (United States)

Walton, J. T.; Pehl, R. H.; Larsh, A. E.

1982-01-01

The low-temperature performance of silicon diffused junction detectors in the measurement of low energy X-rays is reported. The detectors have an area of 0.04 sq cm and a thickness of 100 microns. The spectral resolutions of these detectors were found to be in close agreement with expected values, indicating that the defects introduced by the high-temperature processing required in the device fabrication were not deleteriously affecting the detection of low-energy X-rays. Device performance over a temperature range of 77 K to 150 K is given. These detectors were designed to detect low-energy X-rays in the presence of minimum ionizing electrons. The successful application of silicon-diffused junction technology to X-ray detector fabrication may facilitate the development of other novel silicon X-ray detector designs.

Fabrication of TiN/AlN/TiN tunnel junctions

Energy Technology Data Exchange (ETDEWEB)

Nakayama, Takeru; Naruse, Masato; Myoren, Hiroaki; Taino, Tohru, E-mail: taino@mail.saitama-u.ac.jp

2016-11-15

Highlights: • We have fabricated TiN/AlN/TiN tunnel junctions with an epitaxial layer. • TiN and AlN films were deposited by dc and rf magnetron sputtering at ambient substrate temperatures. • The junctions have a V{sub g} = 1.1 mV, J{sub c} = 0.24 A/cm{sup 2}, R{sub sg}/R{sub n} of 7.2, and low subgap leakage current of 180 nA. - Abstract: We have fabricated TiN/AlN/TiN tunnel junctions with an epitaxial layer. The critical temperature of TiN can be changed in the range from 0.5 to 5.0 K. Therefore, it is easy to set 5.0 K as the target critical temperature. When a Superconducting Tunnel Junction (STJ) is operated as a photon detector, it is necessary to cool it to within 0.1 K of the critical temperature in consideration of the noise of the thermally stimulated currents. Because 0.3 K was desirable, as for the manufacture of general purpose photon detectors, the critical temperature 5.0 K. TiN and AlN films were deposited by dc and rf magnetron sputtering in a load-lock sputtering system at ambient substrate temperatures. The junctions have a gap voltage of V{sub g} = 1.1 mV, and critical current density of J{sub c} = 0.24 A/cm{sup 2}, and R{sub sg}/R{sub n} of 7.2, and low subgap leakage current (I{sub sub}@ 500 µV = 180 nA). We report our experiment system, the manufacture method and the junction properties in this paper.

Junction depth dependence of breakdown in silicon detector diodes

International Nuclear Information System (INIS)

Beck, G.A.; Carter, A.A.; Carter, J.R.; Greenwood, N.M.; Lucas, A.D.; Munday, D.J.; Pritchard, T.W.; Robinson, D.; Wilburn, C.D.; Wyllie, K.

1996-01-01

The high voltage capability of detector diodes fabricated in the planar process is limited by the high field generated at the edge of the junction.We have fabricated diodes with increased junction depth with respect to our standard process and find a significantly higher breakdown voltage,in reasonable agreement with previous studies of junction breakdown. (orig.)

Effect of the critical current density and the junction size on the leakage current of Nb/Al-AlOx/Nb superconducting tunnel junctions for radiation detection

International Nuclear Information System (INIS)

Joosse, K.; Nakagawa, Hiroshi; Akoh, Hiroshi; Takada, Susumu; Maehata, Keisuke; Ishibashi, Kenji.

1996-01-01

Nb/Al-AlO x /Nb superconducting tunnel junctions (STJ's) designed for X-ray detection have been fabricated. The behavior of the low-temperature subgap leakage current, which severely limits the energy resolution obtained in such devices, is investigated. From trends in the dependence of the leakage currents on the critical current density and the size of the STJ, as well as from the low-temperature current-voltage characteristics, and an analysis of the base electrode surface morphology, it is concluded that physical defects in the barrier region are the most probable cause of the leakage currents. Suggestions are given for optimization of the device processing. (author)

Method for manufacturing nuclear radiation detector with deep diffused junction

International Nuclear Information System (INIS)

Hall, R.N.

1977-01-01

Germanium radiation detectors are manufactured by diffusing lithium into high purity p-type germanium. The diffusion is most readily accomplished from a lithium-lead-bismuth alloy at approximately 430 0 C and is monitored by a quartz half cell containing a standard composition of this alloy. Detectors having n-type cores may be constructed by converting high purity p-type germanium to n-type by a lithium diffusion and subsequently diffusing some of the lithium back out through the surface to create a deep p-n junction. Production of coaxial germanium detectors comprising deep p-n junctions by the lithium diffusion process is described

A Review of the Current Situation of Gender Diverse Corporate Boards and the Impact of More Diversity Yfirlit um stöðu og áhrif jafnari kynjahlutfalla við stjórnun og í stjórnum fyrirtækja

Directory of Open Access Journals (Sweden)

Jón Snorri Snorrason

2012-06-01

Full Text Available This paper gives an overview over the number of women serving on corporate boards both in Iceland and abroad. Women hold only around 20% of boards seats and similar number of women is in top managements. It will analyse the development and find plausible explanations of the present situation and introduce recent research papers in this field and explore the impact of more diversity and on firm performance. Are more gender diverse boards likely to perform better then firms lacking the diversity? Will diversity and increased number of women on boards have positive influence on the number of women in top management positions in the same firms? The evidence in the research papers is inconclusive of the effects of gender diversity on firm performance, but better performing firms tend to have more women on the board. We will see positive relation between corporate and board size and the representation of women the boards but find the inverse relation in Iceland. The requirements by law that a minimum fraction of the firm´s board members to be of a certain gender will call for a dramatic improvement on the current situation. Finally we explore the possibilities in the ways firms will increase the number of women on boards to meet the mandating gender diversity before the deadline set by the regulators.Í þessari yfirlitsgrein er farið yfir stöðu kvenna í stjórnum fyrirtækja, bæði hér á landi og erlendis. Aðeins rúm 20% stjórnarsæta eru skipuð konum og svipað hlutfall er í hópi æðstu stjórnenda. Farið verður yfir þróun þessara mála og reynt að leita skýringa á stöðunni og hvernig hún getur breyst. Kynntar verða helstu rannsóknir sem hafa kannað hver áhrifin eru af fjölgun kvenna í stjórnum fyrirtækja. Ýmsum spurningum er velt upp, svo sem hvort fjölbreyttar stjórnir séu líklegri til að skila meiri rekstrarárangri, hvort stjórnhættir breytist með fjölbreytni og loks hvort fjölgun kvenna í stj

Coaxial nuclear radiation detector with deep junction and radial field gradient

International Nuclear Information System (INIS)

Hall, R.N.

1979-01-01

Germanium radiation detectors are manufactured by diffusion lithium into high purity p-type germanium. The diffusion is most readily accomplished from a lithium-lead-bismuth alloy at approximately 430 0 and is monitored by a quartz half cell containing a standard composition of this alloy. Detectors having n-type cores may be constructed by converting high purity p-type germanium to n-type by a lithium diffusion and subsequently diffusing some of the lithium back out through the surface to create a deep p-n junction. Coaxial germanium detectors comprising deep p-n junctions are produced by the lithium diffusion process

Operating modes of superconducting tunnel junction device

Energy Technology Data Exchange (ETDEWEB)

Maehata, Keisuke [Kyushu Univ., Fukuoka (Japan). Faculty of Engineering

1998-07-01

In the Electrotechnical Laboratory, an Nb type superconducting tunnel junction (STJ) device with 200 x 200 sq. micron in area and super high quality was manufactured. By using 55-fe source, response of this large area STJ to X-ray was measured. In this measurement, two action modes with different output wave height from front amplifier were observed. Then, in this study, current-voltage feature of the element in each action mode was analyzed to elucidate a mechanism to form such two action modes. The feature was analyzed by using first order approximate solution on cavity resonance mode of Sine-Gordon equation. From the analytical results, it could be supposed that direction and magnitude of effective magnetic field penetrating into jointed area changed by an induction current effect owing to impressing speed of the magnetic field, which brings two different current-voltage features to make possible to observe two action modes with different pulse wave height. (G.K.)

Influence of quasiparticle multi-tunneling on the energy flow through the superconducting tunnel junction

International Nuclear Information System (INIS)

Samedov, V. V.; Tulinov, B. M.

2011-01-01

Superconducting tunnel junction (STJ) detector consists of two layers of superconducting material separated by thin insulating barrier. An incident particle produces in superconductor excess nonequilibrium quasiparticles. Each quasiparticle in superconductor should be considered as quantum superposition of electron-like and hole-like excitations. This duality nature of quasiparticle leads to the effect of multi-tunneling. Quasiparticle starts to tunnel back and forth through the insulating barrier. After tunneling from biased electrode quasiparticle loses its energy via phonon emission. Eventually, the energy that equals to the difference in quasiparticle energy between two electrodes is deposited in the signal electrode. Because of the process of multi-tunneling, one quasiparticle can deposit energy more than once. In this work, the theory of branching cascade processes was applied to the process of energy deposition caused by the quasiparticle multi-tunneling. The formulae for the mean value and variance of the energy transferred by one quasiparticle into heat were derived. (authors)

The advantages of soft X-rays and cryogenic spectrometers for measuring chemical speciation by X-ray spectroscopy

Energy Technology Data Exchange (ETDEWEB)

Drury, Owen B. [Lawrence Livermore National Laboratory, Advanced Detector Group, 7000 East Ave., L-270, Livermore, CA 94550 (United States); UC Davis, Biophysics Graduate Group, 1 Shields Ave, CA 95616 (United States); LBNL, Advanced Biological and Environmental X-ray Facility, 1 Cyclotron Road, MS 6-2100, Berkeley, CA 92720 (United States); Friedrich, Stephan [Lawrence Livermore National Laboratory, Advanced Detector Group, 7000 East Ave., L-270, Livermore, CA 94550 (United States) and LBNL, Advanced Biological and Environmental X-ray Facility, 1 Cyclotron Road, MS 6-2100, Berkeley, CA 92720 (United States)]. E-mail: friedrich1@llnl.gov; George, Simon J. [LBNL, Advanced Biological and Environmental X-ray Facility, 1 Cyclotron Road, MS 6-2100, Berkeley, CA 92720 (United States); Cramer, Stephen P. [UC Davis, Biophysics Graduate Group, 1 Shields Ave, CA 95616 (United States); LBNL, Advanced Biological and Environmental X-ray Facility, 1 Cyclotron Road, MS 6-2100, Berkeley, CA 92720 (United States)

2006-04-15

We have built a 36-pixel high-resolution superconducting tunnel junction (STJ) soft X-ray spectrometer for chemical analysis of dilute metals by fluorescence-detected X-ray absorption spectroscopy (XAS) at the Advanced Light Source synchrotron. Soft X-ray absorption edges are preferred over traditional hard X-ray spectroscopy at the K-edges, since they have narrower natural linewidths and exhibit stronger chemical shifts. STJ detectors are preferred in the soft X-ray band over traditional Ge or grating spectrometers, since they have sufficient energy resolution to resolve transition metal L and M lines from light element K emission, and sufficient detection efficiency to measure the weak lines of dilute specimens within an acceptable time. We demonstrate the capabilities of our STJ spectrometer for chemical analysis with soft XAS measurements of molybdenum speciation on the Mo M{sub 4,5}-edges.

Quasiparticle losses at the surface of superconducting tunnel junction detectors

NARCIS (Netherlands)

Panteleit, F.; Schroeder, T.; Martin, J.; Huebener, R.P.; Kiewiet, F.B.; Berg, van den M.L.; Korte, P.A.J.

1999-01-01

Superconducting tunnel junctions (STJs) are promising as high energy resolution x-ray detectors. However, the theoretical limit of the energy resolution of STJs has not yet been reached for several reasons. In many cases quasiparticle losses limit the energy resolution. We have investigated STJs

An x-ray detector using superconducting aluminum tunnel junctions

International Nuclear Information System (INIS)

Barber, W.C.; Bland, R.W.; Carpenter, J.W.; Johnson, R.T.; Laws, K.E.; Lockhart, J.; Lee, J.S.; Watson, R.M.

1992-01-01

We report on tests of a prototype detector for 6-keV X-rays, using series arrays of tunnel junction. Tests with higher-energy particles indicate an energy resolution of 4 keV, at 0.3K and with a warm pre-amp. At lower temperatures and with a cooled FET, the resolution should approach 100 eV

Fabrication of a Tantalum-Based Josephson Junction for an X-Ray Detector

Science.gov (United States)

Morohashi, Shin'ichi; Gotoh, Kohtaroh; Yokoyama, Naoki

2000-06-01

We have fabricated a tantalum-based Josephson junction for an X-ray detector. The tantalum layer was selected for the junction electrode because of its long quasiparticle lifetime, large X-ray absorption efficiency and stability against thermal cycling. We have developed a buffer layer to fabricate the tantalum layer with a body-centered cubic structure. Based on careful consideration of their superconductivity, we have selected a niobium thin layer as the buffer layer for fabricating the tantalum base electrode, and a tungsten thin layer for the tantalum counter electrode. Fabricated Nb/AlOx-Al/Ta/Nb and Nb/Ta/W/AlOx-Al/Ta/Nb Josephson junctions exhibited current-voltage characteristics with a low subgap leakage current.

Technology of fabrication of silicon-lithium detector with superficial junction

International Nuclear Information System (INIS)

Cabal Rodriguez, A.E.; Diaz Garcia, A.; Noriega Scull, C.

1997-01-01

The Silicon nuclear radiation detectors transform the charge produced within the semiconductor crystal, product of the impinges of particles and X rays, in pulses of voltage at the output of the preamplifier. The planar Silicon-Lithium (Si(Li)) detector with superficial junction is basically a Pin structure diode. By mean of the diffusion and drift of Lithium in the Silicon a compensated or depletion region was created. There the incident radiation interacts with the Silicon, producing an electric signal proportional to the detector's energy deposited in the semiconductor. The technological process of fabrication this kind of detectors comprises several stages, some of them complex and of long duration. They also demand a systematic control. The technological process of Si(Li) detector's fabrication was carried out. The detector's fabrication electric characteristics were measured in some steps. An obtained device was mounted in the holder within a cryostat, in order to work to temperature of the liquid nitrogen. The energy resolution of the detector was measured and the value was 180 eV for the line of 5.9 KeV of an Fe-55 source. This value has allowed to work with the detector in energy disperse X-rays fluorescence. (author) [es

Graphene-Based Josephson-Junction Single-Photon Detector

Science.gov (United States)

Walsh, Evan D.; Efetov, Dmitri K.; Lee, Gil-Ho; Heuck, Mikkel; Crossno, Jesse; Ohki, Thomas A.; Kim, Philip; Englund, Dirk; Fong, Kin Chung

2017-08-01

We propose to use graphene-based Josephson junctions (GJJs) to detect single photons in a wide electromagnetic spectrum from visible to radio frequencies. Our approach takes advantage of the exceptionally low electronic heat capacity of monolayer graphene and its constricted thermal conductance to its phonon degrees of freedom. Such a system could provide high-sensitivity photon detection required for research areas including quantum information processing and radio astronomy. As an example, we present our device concepts for GJJ single-photon detectors in both the microwave and infrared regimes. The dark count rate and intrinsic quantum efficiency are computed based on parameters from a measured GJJ, demonstrating feasibility within existing technologies.

Nuclear radiation detector based on ion implanted p-n junction in 4H-SiC

International Nuclear Information System (INIS)

Vervisch, V.; Issa, F.; Ottaviani, L.; Lazar, M.; Kuznetsov, A.; Szalkai, D.; Klix, A.; Lyoussi, A.; Vermeeren, L.; Hallen, A.

2013-06-01

In this paper, we propose a new device detector based on ion implanted p-n junction in 4H-SiC for nuclear instrumentation. We showed the interest to use 10 Boron as a Neutron Converter Layer in order to detect thermal neutrons. We present the main results obtained during irradiation tests performed in the Belgian Reactor 1. We show the capability of our detector by means of first results of the detector response at different reverse voltage biases and at different reactor power (authors)

Germanium junction detectors. Theoretical and practical factors governing their use in radiation spectrometry

International Nuclear Information System (INIS)

Hors, M.; Philis, C.

1967-01-01

Semi-conductor detectors have recently greatly increased the possibilities available to nuclear spectroscopists for the study of α, β and γ radiations. Their use in radio-chemistry has encouraged us to study their principle, their mechanism and also the conditions under which they can be used. The first part, which is theoretical, consists of a summary of what should be known concerning the best use of junction detectors, in particular Ge (Li) detectors. The second part, which is experimental, summarizes the laboratory work carried out over a period of one year on Ge (Li) detectors. Stress is laid on the possibilities presented by the use of these detectors as photo-electric spectrometers, and also on the precautions required. Amongst the numerous results presented, the resolution of 2.52 keV obtained for the γ radiation of 145.5 keV for 141 Ce may be particularly noted. (authors) [fr

Temperature-sensitive junction transformations for mid-wavelength HgCdTe photovoltaic infrared detector arrays by laser beam induced current microscope

Energy Technology Data Exchange (ETDEWEB)

Qiu, Weicheng [College of Photoelectric Science and Engineering, National University of Defense Technology, Changsha, Hunan 410073 (China); National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083 (China); Hu, Weida, E-mail: wdhu@mail.sitp.ac.cn; Lin, Tie; Yin, Fei; Zhang, Bo; Chen, Xiaoshuang; Lu, Wei [National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083 (China); Cheng, Xiang' ai, E-mail: xiang-ai-cheng@126.com; Wang, Rui [College of Photoelectric Science and Engineering, National University of Defense Technology, Changsha, Hunan 410073 (China)

2014-11-10

In this paper, we report on the disappearance of the photosensitive area extension effect and the unusual temperature dependence of junction transformation for mid-wavelength, n-on-p HgCdTe photovoltaic infrared detector arrays. The n-type region is formed by B{sup +} ion implantation on Hg-vacancy-doped p-type HgCdTe. Junction transformations under different temperatures are visually captured by a laser beam induced current microscope. A physical model of temperature dependence on junction transformation is proposed and demonstrated by using numerical simulations. It is shown that Hg-interstitial diffusion and temperature activated defects jointly lead to the p-n junction transformation dependence on temperature, and the weaker mixed conduction compared with long-wavelength HgCdTe photodiode contributes to the disappearance of the photosensitive area extension effect in mid-wavelength HgCdTe infrared detector arrays.

Radiation measurements by pn junction InSb detector at the temperature from 4.2 K to 115 K

International Nuclear Information System (INIS)

Kanno, Ikuo; Yoshihara, Fumiki; Nouchi, Ryo; Sugiura, Osamu; Murase, Yasuhiro; Nakamura, Tatsuya; Katagiri, Masaki

2003-01-01

We fabricated the pn junction-type detectors on a p-type InSb substrate. Both sides of the InSb substrate were etched using a mixture of nitric and lactic acids. On the top side surface, Sn and Al were deposited by heat evaporation and then the Sn was diffused into the p-type InSb by lamp annealing and resulted in the n-type layer. Based on the confirmation of the performance of the InSb detector at temperatures of 0.5 K and 4.2 K, we concentrated on the measurement of alpha particles by the pm junction-type InSb detectors at higher operating temperatures of up to 115 K. The InSb detector showed a wide temperature operating range. We can conclude that all of the voltage was induced slowly by the holes at 4.2 K and mainly as a result of electrons at 77 K. (T. Tanaka)

Argumentação e discurso sobre Lei Maria da Penha em acórdãos do STJ

Directory of Open Access Journals (Sweden)

Lúcia Gonçalves Freitas

2014-06-01

Full Text Available Neste artigo, usamos a Análise de Discurso Crítica (ADC como abordagem teórico-metodológica para analisar argumentos de ministros e ministras do Superior Tribunal de Justiça (STJ em um acórdão que afetou o entendimento jurisprudencial brasileiro sobre a Lei Maria da Penha. O principal objetivo neste trabalho é analisar como a Justiça constrói argumentos relativos à violência contra as mulheres em um órgão público notório, como o STJ, que é popularmente conhecido como "Tribunal da Cidadania" por, supostamente, garantir o exercício de vários direitos para a população brasileira. Também buscamos trazer a público diálogos conflitantes, ideologias e jogos de poder inerentes à decisão em análise.

Cryogenic readout integrated circuits for submillimeter-wave camera

International Nuclear Information System (INIS)

Nagata, H.; Kobayashi, J.; Matsuo, H.; Akiba, M.; Fujiwara, M.

2006-01-01

The development of cryogenic readout circuits for Superconducting Tunneling Junction (Sj) direct detectors for submillimeter wave is presented. A SONY n-channel depletion-mode GaAs Junction Field Effect Transistor (JFET) is a candidate for circuit elements of the preamplifier. We measured electrical characteristics of the GaAs JFETs in the temperature range between 0.3 and 4.2K, and found that the GaAs JFETs work with low power consumption of a few microwatts, and show good current-voltage characteristics without cryogenic anomalies such as kink phenomena or hysteresis behaviors. Furthermore, measurements at 0.3K show that the input referred noise is as low as 0.6μV/Hz at 1Hz. Based on these results and noise calculations, we estimate that a Capacitive Transimpedance Amplifier with the GaAs JFETs will have low noise and STJ detectors will operate below background noise limit

Cryogenic readout integrated circuits for submillimeter-wave camera

Energy Technology Data Exchange (ETDEWEB)

Nagata, H. [National Astronomical Observatory of Japan, Mitaka, Tokyo 181-8588 (Japan) and National Astronomical Observatory of Japan, Mitaka, Tokyo 181-8588 (Japan)]. E-mail: hirohisa.nagata@nao.ac.jp; Kobayashi, J. [National Astronomical Observatory of Japan, Mitaka, Tokyo 181-8588 (Japan); The Graduate University for Advanced Studies, Shonan Village, Hayama, Kanagawa 240-0193 (Japan); Matsuo, H. [National Astronomical Observatory of Japan, Mitaka, Tokyo 181-8588 (Japan); Akiba, M. [National Institute of Information and Communications Technology, Koganei, Tokyo 184-8795 (Japan); Fujiwara, M. [National Institute of Information and Communications Technology, Koganei, Tokyo 184-8795 (Japan)

2006-04-15

The development of cryogenic readout circuits for Superconducting Tunneling Junction (Sj) direct detectors for submillimeter wave is presented. A SONY n-channel depletion-mode GaAs Junction Field Effect Transistor (JFET) is a candidate for circuit elements of the preamplifier. We measured electrical characteristics of the GaAs JFETs in the temperature range between 0.3 and 4.2K, and found that the GaAs JFETs work with low power consumption of a few microwatts, and show good current-voltage characteristics without cryogenic anomalies such as kink phenomena or hysteresis behaviors. Furthermore, measurements at 0.3K show that the input referred noise is as low as 0.6{mu}V/Hz at 1Hz. Based on these results and noise calculations, we estimate that a Capacitive Transimpedance Amplifier with the GaAs JFETs will have low noise and STJ detectors will operate below background noise limit.

The position of the political parties before the general election in 2007 from a marketing perspective Markaðsfræðilegt sjónarhorn á stöðu stjórnmálaflokka fyrir alþingiskosningarnar 2007

Directory of Open Access Journals (Sweden)

Þórhallur Guðlaugsson

2008-06-01

Full Text Available Abstract in English is unavailable.Viðfangsefni greinarinnar er mat á staðfærslu stjórnmálaflokka og hvernig ímynd og staðfærsla tengjast faglegu markaðsstarfi, samkeppnishæfni og árangri. Fjallað er um niðurstöður rannsóknar þar sem lagt er mat á staðfærslu stjórnmálaflokka hjá ungu fólki og skoðað með hvaða hætti hún endurspeglar árangur í kosningum. Í þessu sambandi eiga stjórnmálaflokkar í nokkrum vanda. Stjórnmálaflokkar eru ekki fyrirtæki þar sem hægt er að gefa út tiltekna línu hvað samskipti og skilaboð varðar. Vissulega reyna menn þó að stilla saman strengi sína, sérstaklega í kosningabaráttunni. Þar virðast flestir flokkar leggja áherslu á loforð, þ.e. kjósi menn flokkinn þá muni þetta eða hitt gerast eða breytast eftir kosningar. Fólk virðist þó ekki gera ráð fyrir því að stjórnmálamenn standi við gefin loforð og virðast margir bera meira traust til einstaklinga almennt en stjórnmálamanna. Kjósendur hafa iðulega óljósa mynd af því fyrir hvað tiltekinn stjórnmálaflokkur stendur en ýmislegt bendir til þess að tengsl séu á milli staðfærslu og árangurs í kosningum. Þrír stjórnmálaflokkar virðast hafa skýra og afgerandi stöðu hjá ungu fólki, Sjálfstæðisflokkurinn, Vinstrihreyfingin grænt framboð og Framsóknarflokkurinn. Tveir þeirra tengjast jákvæðum eiginleikum en einn neikvæðum gildum. Tveir stjórnmálaflokkar virðast hafa óljósa stöðu í huga ungra kjósenda, Samfylkingin og Frjálslyndi flokkurinn. Hafa þarf í huga að staðfærsla verður ekki mæld í eitt skipti fyrir öll og mikilvægt að mæla hana reglulega ef niðurstöðurnar eiga að nýtast í faglegu markaðsstarfi flokkanna.

Response of high Tc superconducting Josephson junction to nuclear radiation

International Nuclear Information System (INIS)

Ding Honglin; Zhang Wanchang; Zhang Xiufeng

1992-10-01

The development of nuclear radiation detectors and research on high T c superconducting nuclear radiation detectors are introduced. The emphases are the principle of using thin-film and thick-film Josephson junctions (bridge junction) based on high T c YBCO superconductors to detect nuclear radiation, the fabrication of thin film and thick-film Josephson junction, and response of junction to low energy gamma-rays of 59.5 keV emitted from 241 Am and beta-rays of 546 keV. The results show that a detector for measuring nuclear radiation spectrum made of high T c superconducting thin-film or thick-film, especially, thick-film Josephson junction, certainly can be developed

On the stability of large-area Al-p-Si junction

International Nuclear Information System (INIS)

Tsyganov, Yu.S.

2006-01-01

Design of silicon radiation detector made of 12 kΩ · cm p-silicon with both amine- and amine-free hardeners epoxy resin junction edge passivation is presented. Before producing large-area detectors for measurements of efficiency of evaporation residues collection at the focal plane of the Dubna Gas-Filled Recoil Separator (DGFRS), a set of small-area test detectors was produced. Stability of the Al-(p)Si junction has been studied for a long time. Estimate of a realistic lifetime for the mentioned type of Al-Si rectifying junction is done

A 36-pixel superconducting tunnel junction soft X-ray detector for environmental science applications

International Nuclear Information System (INIS)

Friedrich, Stephan; Drury, Owen B.; Cramer, Stephen P.; Green, Peter G.

2006-01-01

We are operating a superconducting tunnel junction detector for high-resolution soft X-ray spectroscopy at the Advanced Biological and Environmental X-ray Facility at the Advanced Light Source synchrotron. We have recently upgraded the instrument from 9 to 36 pixels for increased sensitivity. We have also acquired a new digital signal readout to increase the total count rate capabilities to ∼10 6 counts/s while maintaining a high peak-to-background ratio. We report on the performance of the spectrometer, and discuss speciation measurements of chromium in welding aerosols as a typical application of the instrument in environmental science

A 36-pixel superconducting tunnel junction soft X-ray detector for environmental science applications

Energy Technology Data Exchange (ETDEWEB)

Friedrich, Stephan [Lawrence Livermore National Laboratory, Advanced Detector Group, 7000 East Avenue, L-270, Livermore, CA 94550 (United States) and Lawrence Berkeley National Laboratory, Advanced Biological and Environmental X-ray Facility, 1 Cyclotron Road, Berkeley, CA 94720 (United States)]. E-mail: friedrich1@llnl.gov; Drury, Owen B. [Lawrence Livermore National Laboratory, Advanced Detector Group, 7000 East Avenue, L-270, Livermore, CA 94550 (United States); Lawrence Berkeley National Laboratory, Advanced Biological and Environmental X-ray Facility, 1 Cyclotron Road, Berkeley, CA 94720 (United States); Cramer, Stephen P. [Lawrence Berkeley National Laboratory, Advanced Biological and Environmental X-ray Facility, 1 Cyclotron Road, Berkeley, CA 94720 (United States); Green, Peter G. [University of California Davis, Department of Civil and Environmental Engineering, 1 Shields Avenue, Davis, CA 95616 (United States)

2006-04-15

We are operating a superconducting tunnel junction detector for high-resolution soft X-ray spectroscopy at the Advanced Biological and Environmental X-ray Facility at the Advanced Light Source synchrotron. We have recently upgraded the instrument from 9 to 36 pixels for increased sensitivity. We have also acquired a new digital signal readout to increase the total count rate capabilities to {approx}10{sup 6} counts/s while maintaining a high peak-to-background ratio. We report on the performance of the spectrometer, and discuss speciation measurements of chromium in welding aerosols as a typical application of the instrument in environmental science.

S-Cam 3: Optical astronomy with a STJ-based imaging spectrophotometer

International Nuclear Information System (INIS)

Verhoeve, P.; Martin, D.D.E.; Hijmering, R.A.; Verveer, J.; Dordrecht, A. van; Sirbi, G.; Oosterbroek, T.; Peacock, A.

2006-01-01

S-Cam 3 is the third generation of a cryogenic camera, based on superconducting tunnel junctions (STJs), for ground-based optical astronomy, deployed at the 4.2 m William Herschel Telescope (WHT) at La Palma (Spain). It exploits a 10x12 pixel array of Ta/Al STJs, covering a field of view of ∼9''x11'' on the sky. The wavelength band extends from 330-750 nm, with a wavelength resolving power of ∼10 at 500 nm. The detectors are operated at ∼285 mK, achieved with a double stage 4 He- 3 He sorption cooler. Each pixel has its own electronic readout chain at room temperature, with a JFET-based charge sensitive preamplifier. The instrument has undergone extensive testing and calibration, followed by the first observation campaign at La Palma in July 2004. This campaign has focused on point sources with time variability, exploiting the instrument's unique combination of spectrophotometry with high time resolution

Chest-lead ST-J amplitudes using arm electrodes as reference instead of the Wilson central terminal in smartphone ECG applications: Influence on ST-elevation myocardial infarction criteria fulfillment.

Science.gov (United States)

Lindow, Thomas; Engblom, Henrik; Khoshnood, Ardavan; Ekelund, Ulf; Carlsson, Marcus; Pahlm, Olle

2018-05-07

"Smartphone 12-lead ECG" for the assessment of acute myocardial ischemia has recently been introduced. In the smartphone 12-lead ECG either the right or the left arm can be used as reference for the chest electrodes instead of the Wilson central terminal. These leads are labeled "CR leads" or "CL leads." We aimed to compare chest-lead ST-J amplitudes, using either CR or CL leads, to those present in the conventional 12-lead ECG, and to determine sensitivity and specificity for the diagnosis of STEMI for CR and CL leads. Five hundred patients (74 patients with ST elevation myocardial infarction (STEMI), 66 patients with nonischemic ST deviation and 360 controls) were included. Smartphone 12-lead ECG chest-lead ST-J amplitudes were calculated for both CR and CL leads. ST-J amplitudes were 9.1 ± 29 μV larger for CR leads and 7.7 ± 42 μV larger for CL leads than for conventional chest leads (V leads). Sensitivity and specificity were 94% and 95% for CR leads and 81% and 97% for CL leads when fulfillment of STEMI criteria in V leads was used as reference. In ischemic patients who met STEMI criteria in V leads, but not in limb leads, STEMI criteria were met with CR or CL leads in 91%. By the use of CR or CL leads, smartphone 12-lead ECG results in slightly lower sensitivity in STEMI detection. Therefore, the adjustment of STEMI criteria may be needed before application in clinical practice. © 2018 The Authors. Annals of Noninvasive Electrocardiology Published by Wiley Periodicals, Inc.

P-N semiconductor junctions used as X-ray detectors

International Nuclear Information System (INIS)

Pela, C.A.; Bruco, J.L.; Navas, E.A.; Paula, E. de; Guilardi Neto, T.

1987-01-01

The current response of some comercial P-N semiconductor junctions in function of X-ray incidency, in 40 to 140 KVp band used in diagnosis was characterized. Some junctions were also exposed to radiation of 80 to 250 KVp used in therapy. (C.G.C.) [pt

Non-equilibrium phonon generation and detection in microstructure devices

KAUST Repository

Hertzberg, J. B.

2011-01-01

We demonstrate a method to excite locally a controllable, non-thermal distribution of acoustic phonon modes ranging from 0 to ∼200 GHz in a silicon microstructure, by decay of excited quasiparticle states in an attached superconducting tunnel junction (STJ). The phonons transiting the structure ballistically are detected by a second STJ, allowing comparison of direct with indirect transport pathways. This method may be applied to study how different phonon modes contribute to the thermal conductivity of nanostructures. © 2011 American Institute of Physics.

Superconductive junctions for x-ray spectroscopy

International Nuclear Information System (INIS)

Grand, J.B. le; Bruijn, M.P.; Frericks, M.; Korte, P.A.J. de; Houwman, E.P.; Flokstra, J.

1992-01-01

Biasing of SIS-junctions for the purpose of high energy resolution x-ray detection is complicated by the presence of a DC Josephson current and AC Josephson current resonances, so that a large magnetic field is normally used for the suppression of these Josephson features. A transimpedance amplifier is proposed for biasing and signal amplification at low magnetic field. X-ray spectroscopy detectors for astronomy require a high detection efficiency in the 0.5-10 keV energy band and a reasonable (∼1 cm 2 ) detector area. Calculations on absorber-junctions combinations which might meet these requirements are presented. (author) 9 refs.; 10 figs

Manufacturing P-N junctions in germanium bodies

International Nuclear Information System (INIS)

Hall, R.N.

1980-01-01

A method of producing p-n junctions in Ge so as to facilitate their use as radiation detectors involves forming a body of high purity p-type germanium, diffusing lithium deep into the body, in the absence of electrolytic processes, to form a junction between n-type and p-type germanium greater than 1 mm depth. (UK)

Superconductive tunnel structures as radiation detectors

International Nuclear Information System (INIS)

Barone, A.; Gray, K.E.

1985-08-01

A brief review is given on various aspects of the potential of superconducting tunnel junctions as detectors for atomic and nuclear radiations. On the basis of recent results main advantages and drawbacks are indicated providing a preliminary comparison with the presently used semiconductor detectors. The basic ideas underlying the physics of the interaction of nuclear particles and other radiations with superconducting junctions are outlined. 9 refs., 1 tab

The physics and technology of Si and Ge detectors

International Nuclear Information System (INIS)

Stab, Lucien

Semiconductor physics fundamentals are recalled (energy levels in crystalline solids, level population, charge carrier transport) as an introduction to studying NP junction at thermal equilibrium, or reversly biased. The fabrication of semiconductor detectors including surface barrier detectors, implanted junctions, and lithium-drifted semiconductors is discussed [fr

Radiation detection with Nb/Al-AlOx/Al/Nb superconducting tunnel junctions

International Nuclear Information System (INIS)

Matsumura, Atsuki; Takahashi, Toru; Kurakado, Masahiko

1992-01-01

Superconductor radiation detectors have the possibility of 20-30 times better energy resolution than that of a high resolution Si detector. We fabricated Nb/Al-AlOx/Al/Nb superconducting tunnel junctions with low leakage current. X rays were detected with large area junctions of 178x178 μm 2 . High energy resolution of 160 eV for 5.9 keV was obtained. We also fabricated series connected junctions which covers a rather large area of 4x4 mm 2 . α particles injected into the rear substrate were detected using nonthermal phonons induced by the radiations in the substrate. (author)

Cryogenic detectors

International Nuclear Information System (INIS)

Zehnder, A.

1987-01-01

Presently the development of new large scale detector systems, used in very high energy physics experiments, is very active. In the low energy range, the introduction of charge coupled devices allows improved spacial and energy resolution. In the keV region, high resolution can only be achieved via the well established diffraction spectrometers with the well-known disadvantage of a small throughput. There exist no efficient detectors for non-ionizing radiation such as coherent nuclear scattering of weakly interacting particles. The development of high resolution solid state detectors in the keV-region with the possibility of nuclear recoil detection is therefore highly desired. Such detectors applied in astro and particle physics would thus allow one to obtain new information not achievable otherwise. Three types of cryogenic detectors exist: Calorimeters/Bolometers. This type is sensitive to the produced excess phonons and measures the deposited energy by detecting the heat pulses. Excess charge carriers should be used to produce phonons. Tunneling junctions. This type is sensitive to excess charge produced by the Cooper pair breakup. Excess phonons should be used to break up Cooper pairs. Superheated superconducting granules (SSG). An SSG detector consists of granules, the metastability of which is disturbed by radiation. The Meissner effect then causes a change in the field distribution of the applied external field, which can be detected. The present paper discusses the basic principle of calorimetric and tunneling junction detectors and some of their applications. 26 refs., 7 figs., 1 tab

Hydrogen gas detector

International Nuclear Information System (INIS)

Bohl, T.L.

1982-01-01

A differential thermocouple hydrogen gas detector has one thermocouple junction coated with an activated palladium or palladium-silver alloy catalytic material to allow heated hydrogen gas to react with the catalyst and raise the temperature of that junction. The other juction is covered with inert glass or epoxy resin, and does not experience a rise in temperature in the presence of hydrogen gas. A coil heater may be mounted around the thermocouple junctions to heat the hydrogen, or the gas may be passed through a heated block prior to exposing it to the thermocouples

Quantitating aortic regurgitation by cardiovascular magnetic resonance: significant variations due to slice location and breath holding

International Nuclear Information System (INIS)

Chaturvedi, Abhishek; Hamilton-Craig, Christian; Cawley, Peter J.; Maki, Jeffrey H.; Mitsumori, Lee M.; Otto, Catherine M.

2016-01-01

Compare variability in flow measurements by phase contrast MRI, performed at different locations in the aorta and pulmonary artery (PA) using breath-held (BH) and free-breathing (FB) sequences. Fifty-seven patients with valvular heart disease, confirmed by echocardiography, were scanned using BH technique at 3 locations in the ascending aorta (SOV = sinus of Valsalva, STJ = sinotubular junction, ASC = ascending aorta at level of right pulmonary artery) and 2 locations in PA. Single FB measurement was obtained at STJ for aorta. Obtained metrics (SV = stroke volume, FV = forward volume, BV = backward volume, RF = regurgitant fraction) were evaluated separately for patients with aortic regurgitation (AR, n = 31) and mitral regurgitation (n = 26). No difference was noted between the two measurements in the PA. Significant differences were noted in measured SV at different aortic locations. SV measurements obtained at ASC correlated best with the measurements obtained in the PA. Strongest correlation of AR was measured at the STJ. Measurements of flow volumes by phase contrast MRI differ depending on slice location. When using stroke volumes to calculate pulmonary to systemic blood flow ratio (Qp/Qs), ASC should be used. For quantifying aortic regurgitation, measurement should be obtained at STJ. (orig.)

Numerical analysis of three-colour HgCdTe detectors

Science.gov (United States)

Jóźwikowski, K.; Rogalski, A.

2007-12-01

The performance of three-colour HgCdTe photovoltaic heterostructure detector is examined theoretically. In comparison with two-colour detectors with two back-to-back junctions, three-colour structure contains an absorber of intermediate wavelength placed between two junctions and electronic barriers are used to isolate this intermediate region. This structure was first proposed by British workers. Three-detector structures with different localizations of separating barriers are analyzed. The calculation results are presented in the form of spatial distributions of bandgap energy and quantum efficiency. Enhanced original computer programs are applied to solve the system of non-linear continuity equations for carriers and Poisson equations. In addition, the numerical analysis includes the dependence of absorption coefficient on Burstein effect as well as interference effects in heterostructure with metallic electrical contacts. It is shown that the performance of the detector is critically dependent on the barrier’s doping level and position in relation to the junction. This behaviour is serious disadvantage of the considered three-colour detector. A small shift of the barrier location and doping level causes serious changes in spectral responsivity.

Spatially resolved detection of mutually locked Josephson junctions in arrays

International Nuclear Information System (INIS)

Keck, M.; Doderer, T.; Huebener, R.P.; Traeuble, T.; Dolata, R.; Weimann, T.; Niemeyer, J.

1997-01-01

Mutual locking due to the internal coupling in two-dimensional arrays of Josephson junctions was investigated. The appearance of Shapiro steps in the current versus voltage curve of a coupled on-chip detector junction is used to indicate coherent oscillations in the array. A highly coherent state is observed for some range of the array bias current. By scanning the array with a low-power electron beam, mutually locked junctions remain locked while the unlocked junctions generate a beam-induced additional voltage drop at the array. This imaging technique allows the detection of the nonlocked or weakly locked Josephson junctions in a (partially) locked array state. copyright 1997 American Institute of Physics

Enhanced numerical analysis of three-color HgCdTe detectors

Science.gov (United States)

Jóźwikowski, K.; Rogalski, A.

2007-04-01

The performance of three-color HgCdTe photovoltaic heterostructure detector is examined theoretically. In comparison with two-color detectors with two back-to-back junctions, three-color structure contain an absorber of intermediate wavelength placed between two junctions, and electronic barriers are used to isolate this intermediate region. This structure was first proposed by British workers. Enhanced original computer programs are applied to solve the system of non-linear continuity equations for carriers and Poisson equations. In addition, the numerical analysis includes the dependence of absorption coefficient on Burstein effect as well as interference effects in heterostructure with metallic electrical contacts. Three detector structures with different localizations of separating barriers are analyzed. The calculations results are presented in the form of spatial distributions of bandgap energy and quantum efficiency. It is shown that the performance of the detector is critically dependent on the barrier's doping level and position in relation to the junction. This behavior is serious disadvantage of the considered three color detector. A small shift of the barrier location and doping level causes serious changes in spectral responsivity.

Investigation of efficient termination structure for improved breakdown properties of semiconductor radiation detectors

International Nuclear Information System (INIS)

Krizaj, D.; Resnik, D.; Vrtacnik, D.; Amon, S.

1998-01-01

Efficiency of a new junction termination structure for improvement of breakdown properties of semiconductor radiation detectors is investigated. The structure consists of a diffused resistor winding around the active junction in a spiral fashion. The current flow through the spiral enables controlled potential distribution along the spiral turns and thus controlled depletion spreading from the main junction, efficiently preventing premature avalanche breakdown. Both multiple guard-ring structures and spiral junction termination structures have shown good breakdown properties typically three to five times higher than breakdown voltages of diodes without junction termination. The breakdown voltages of spiral junction termination structures are only weakly influenced by changes in substrate doping concentration caused by neutron irradiation. They can thus be considered for termination of future semiconductor radiation detectors

Distributed Read-out Imaging Device array for astronomical observations in UV/VIS

NARCIS (Netherlands)

Hijmering, R.A.

2009-01-01

STJ (Superconducting Tunneling Junctions) are being developed as spectro-photometers in wavelengths ranging from the NIR to X-rays. 10x12 arrays of STJs have already been successfully used as optical imaging spectrometers with the S-Cam 3, on the William Hershel Telescope on La Palma and on the

Semiconductor ionizino. radiation detectors

International Nuclear Information System (INIS)

1982-01-01

Spectrometric semiconductor detectors of ionizing radiation with the electron-hole junction, based on silicon and germanium are presented. The following parameters are given for the individual types of germanium detectors: energy range of detected radiation, energy resolution given as full width at half maximum (FWHM) and full width at one tenth of maximum (FWTM) for 57 Co and 60 Co, detection sensitivity, optimal voltage, and electric capacitance at optimal voltage. For silicon detectors the value of FWHM for 239 Pu is given, the sensitive area and the depth of the sensitive area. (E.S.)

Large area high quality silicon detectors for scientific research and radioactivity monitoring in the environment

International Nuclear Information System (INIS)

Frolov, D.; Perevertailo, V.; Frolov, O.; Kononenko, Yu.; Pugatch, V.; Rozenfeld, A.

1995-01-01

Full text: Investigation of detector and special test structures made on detector wafers was carried out. Si wafer with a diameter of 76 mm, n-type, specific resistance 2-6 kΩ·cm, made of Si produced at a titanium-magnesium factory in Zaporozh'e (Ukraine) were used. C-V curves were measured on p + -n-junctions of various areas (0.1 cm 2 to 20 cm 2 ) and various configuration. In coordinated C 3 (dC/dV) -1 vs V initial parts of the curves are horizontal lines, that indicates a uniform dopant concentration into the depth of a sample, while starting with some voltage a rise is observed associated with full depletion of the sample. However this rise is more smooth then one described by a simple model. The smooth rise is due to non-uniformity of the depletion depth over the p + -n-junction area caused by non-uniform distribution of dopant concentration over the wafer surface. As a results, full depletion doesn't occur simultaneously in all regions of the junction and is stretched along the voltage scale. A theory is developed to define a distribution of the sample areas over full depletion voltage V fd or over dopant concentration N and, given a fixed voltage, to define the distribution of non-depleted junction ares over a thickness of non-depleted area. Results show possibility of non uniform N and, correspondingly, V fd by up to 2 times with big junction sizes. A high level of non-uniformity was observed not only on Si made in Zaporozh'e, but also on Wacker Si. This method of measurements and analysis may be helpful both in working with detectors and detector Si quality control. Measurements of current and capacitance in a gate-controlled junction (a MOS structure partially overlapped with a p + -n-junction) allowed division of surface into the depth of the crystal. Some peculiarities are observed in current curves compared to previous reports associated with low dopant concentration in our experiments. Local defect areas near the p-n-junction encouraging avalanche

Phonon spectroscopy with superconducting tunnel junctions

International Nuclear Information System (INIS)

Grimshaw, J.M.

1984-02-01

Superconducting tunnel junctions can be used as generators and detectors of monochromatic phonons of frequency larger than 80 GHz, as was first devised by Eisenmenger and Dayem (1967) and Kinder (1972a, 1973). In this report, we intend to give a general outline of this type of spectroscopy and to present the results obtained so far. The basic physics underlying phonon generation and detection are described in chapter I, a wider approach being given in the references therein. In chapter II, the different types of junctions are considered with respect to their use. Chapter III deals with the evaporation technique for the superconducting junctions. The last part of this report is devoted to the results that we have obtained on γ-irradiated LiF, pure Si and Phosphorous implanted Si. In these chapters, the limitations of the spectrometer are brought out and suggestions for further work are given [fr

Particle detection with superconducting tunnel junctions

International Nuclear Information System (INIS)

Jany, P.

1990-08-01

At the Institute of Experimental Nuclear Physics of the University of Karlsruhe (TH) and at the Institute for Nuclear Physics of the Kernforschungszentrum Karlsruhe we started to produce superconducting tunnel junctions and to investigate them for their suitability as particle detectors. The required facilities for the production of tunnel junctions and the experimental equipments to carry out experiments with them were erected. Experiments are presented in which radiations of different kinds of particles could successfully be measured with the tunnel junctions produced. At first we succeeded in detectioning light pulses of a laser. In experiments with alpha-particles of an energy of 4,6 MeV the alpha-particles were detected with an energy resolution of 1,1%, and it was shown in specific experiments that the phonons originating from the deposition of energy by an alpha-particle in the substrate can be detected with superconducting tunnel junctions at the surface. On that occasion it turned out that the signals could be separated with respect to their point of origin (tunnel junction, contact leads, substrate). Finally X-rays with an energy of 6 keV were detected with an energy resolution of 8% in a test arrangement that makes use of the so-called trapping effect to read out a larger absorber volume. (orig.) [de

Flux-flow drag in coupled Josephson junctions

International Nuclear Information System (INIS)

Parmentier, R.D.; Barbara, P.; Costabile, G.; DAnna, A.; Malomed, B.A.; Soriano, C.

1997-01-01

We present a detailed analysis of the interaction between two fluxon chains in parallel magnetically coupled long Josephson junctions, one of which is biased (open-quotes generatorclose quotes) while another is unbiased (open-quotes detectorclose quotes). The main effect is that the driven fluxon chain in the generator may drag the chain in the detector. We note that five different regimes of the interaction are possible: both chains may be pinned by the external magnetic field; both may move in a locked state, inducing the same dc voltage in both junctions; in an unlocked state they may move at different velocities; the chain in the detector may remain pinned while the one in the generator is moving; and, finally, in a limited range of parameters the mean detector voltage may be negative, which implies that the detector chain is moving in the direction opposite to that of the chain in the generator. We consider a simplified model based on the assumptions that the fluxon chains are dense and rigid, and that their motion is nonrelativistic. In this model, each chain is represented by a single degree of freedom (its coordinate). Numerical and analytical consideration of the simplified model demonstrates that it is able to reproduce correctly all the dynamical regimes except for the negative-voltage one. To explain the existence of the latter regime, we introduce another model, suggested by the simulations, which is based on the presence of two fluxons and one antifluxon in the generator, and a single fluxon in the detector. The negative voltage is produced by motion of the antifluxon in a bound state with the detector close-quote s fluxon. The existence region of this state is limited by its collisions with free fluxons in the generator. copyright 1997 The American Physical Society

An incipient public authority: A short pre-history of the Central Bank of Iceland Stjórnvald í mótun: Drög að forsögu Seðlabankans

Directory of Open Access Journals (Sweden)

Helgi Skúli Kjartansson

2011-06-01

Full Text Available The author surveys the central banking functions progressively assumed by the National Bank of Iceland (Landsbanki Íslands prior to the establishment in 1961 of the separate Icelandic Central Bank (Seðlabanki Íslands. The NBI took over the issuance of banknotes in 1924; its central banking functions were defined by law (unrealistically, as the law foresaw a functioning gold standard which never was put into practice in 1927; its central banking section became financially separate in 1930; it was put under separate administration by law in 1957, and given the right, first exercised in 1960 onwards, to determine interest rates and reserve requirement in commercial banking. Among the particular points under discussion are NBI´s responsibility for other banks (none whatsoever when the country´s second bank failed in 1930; its involvement, from the early 1930s onward, in a regime of currency controls; its control of interest rates (limited and largely by persuasion as its rediscount rate was not an instrument of monetary policy; and its increasing willingness to state its own its monetary policy, even in opposition to the policy pursued by national government.Í greininni er fjallað um seðlabankahlutverk Landsbanka Íslands fram til 1961 þegar Seðlabanki Íslands varð að sjálfstæðri stofnun. Landsbankinn hafði annast seðlaútgáfu frá 1924 og verið skilgreindur sem seðlabanki að lögum frá 1927, en þar sem lögin gengu út frá föstu gullgengi og gullinnlausn krónunnar, sem aldrei varð að veruleika, var það reynslan fremur en lögin sem mótaði seðlabankahlutverk Landsbankans í raun. Seðlabankinn var sérstök deild Landsbankans, fjárhagslega aðskilin frá 1930 (þó hún annaðist fyrst um sinn stóran hluta af viðskiptabankastarfseminni líka og undir sérstakri stjórn frá 1957, en það var stærsta skrefið í átt til sjálfstæðs seðlabanka. Meðal annars er rætt um afskiptaleysi Landsbankans af falli �

Application of AXUV photoelectric diode detector

International Nuclear Information System (INIS)

Yu Guogang; Pan Ningdong; Liu Yi

2006-01-01

Based on the photo-voltage effect of PN junction, two kinds of detector are introduced. Newly designed AXUV (Absolute Extreme Ultra Violet) photodiodes array radiation diagnostic system is installed in the HA-2A tokamak device. The advantages of AXUV detector are its near theoretical high quantum efficiency, high sensitivity, high responsibility, electromagnetic and vibration immunity, low price. (authors)

Physical principles of semiconductor detectors

International Nuclear Information System (INIS)

Micek, S.L.

1979-01-01

The general properties of semiconductors with respect to the possibilities of their use as the ionization radiation detectors are discussed. Some chosen types of semiconductor junctions and their characteristics are briefly presented. There are also discussed the physical phenomena connected with the formation of barriers in various types of semiconductor counters. Finally, the basic properties of three main types of semiconductor detectors are given. (author)

Silicon radiation detector analysis using back electron beam induced current

International Nuclear Information System (INIS)

Guye, R.

1987-01-01

A new technique for the observation and analysis of defects in silicon radiation detectors is described. This method uses an electron beam from a scanning electron microscope (SEM) impinging on the rear side of the p + n junction of the silicon detector, which itself is active and detects the electron beam induced current (EBIC). It is shown that this current is a sensitive probe of localized trapping centers, either at the junction surface or somewhere in the volume of the silicon crystal. (orig.)

The two sides of silicon detectors

International Nuclear Information System (INIS)

Devine, S.R.

2001-10-01

Results are presented on in situ irradiation of silicon detector's at cryogenic temperature. The results show that irradiation at cryogenic temperatures does not detrimentally effect a silicon detectors performance when compared to its irradiation at room temperature. Operation of silicon devices at cryogenic temperatures offers the advantage of reducing radiation-induced leakage current to levels of a few pA, while at 130K the Lazarus Effect plays an important role i.e. minimum voltage required for full depletion. Performing voltage scans on a 'standard' silicon pad detector pre- and post annealing, the charge collection efficiency was found to be 60% at 200V and 95% at 200V respectively. Time dependence measurements are presented, showing that for a dose of 6.5x10 14 p/cm 2 (450GeV protons) the time dependence of the charge collection efficiency is negligible. However, for higher doses, 1.2x10 15 p/cm 2 , the charge collection efficiency drops from an initial measured value of 67% to a stable value of 58% over a period of 15 minutes for reversed biased diodes. An analysis of the 'double junction' effect is also presented. A comparison between the Transient Current Technique and an X-ray technique is presented. The double junction has been observed in p + /n/n + silicon detectors after irradiation beyond 'type inversion', corresponding to a fluence equivalent to ∼3x10 13 cm -2 1MeV neutrons, producing p + /p/n + and essentially two p-n junctions within one device. With increasing bias voltage, as the electric field is extending into the detector bulk from opposite sides of the silicon detector, there are two distinct depletion regions that collect charge signal independently. Summing the signal charge from the two regions, one is able to reconstruct the initial energy of the incident particle. From Transient Current measurements it is apparent that E-field manipulation is possible by excess carrier injection, enabling a high enough E-field to extend across the

Optical photon detection in Al superconducting tunnel junctions

International Nuclear Information System (INIS)

Brammertz, G.; Peacock, A.; Verhoeve, P.; Martin, D.; Venn, R.

2004-01-01

We report on the successful fabrication of low leakage aluminium superconducting tunnel junctions with very homogeneous and transparent insulating barriers. The junctions were tested in an adiabatic demagnetisation refrigerator with a base temperature of 35 mK. The normal resistance of the junctions is equal to ∼7 μΩ cm 2 with leakage currents in the bias voltage domain as low as 100 fA/μm 2 . Optical single photon counting experiments show a very high responsivity with charge amplification factors in excess of 100. The total resolving power λ/Δλ (including electronic noise) for 500 nm photons is equal to 13 compared to a theoretical tunnel limited value of 34. The current devices are found to be limited spectroscopically by spatial inhomogeneities in the detectors response

Oscillatory regime of avalanche particle detectors

International Nuclear Information System (INIS)

Lukin, K.A.; Cerdeira, H.A.; Colavita, A.A.

1995-06-01

We describe the model of an avalanche high energy particle detector consisting of two pn-junctions, connected through an intrinsic semiconductor with a reverse biased voltage applied. We show that this detector is able to generate the oscillatory response on the single particle passage through the structure. The possibility of oscillations leading to chaotic behaviour is pointed out. (author). 15 refs, 7 figs

Miniature semiconductor detectors for in vivo dosimetry

International Nuclear Information System (INIS)

Rosenfeld, A. B.; Cutajar, D.; Lerch, M. L. F.; Takacs, G.; Cornelius, I. M.; Yudelev, M.; Zaider, M.

2006-01-01

Silicon mini-semiconductor detectors are found in wide applications for in vivo personal dosimetry and dosimetry and Micro-dosimetry of different radiation oncology modalities. These applications are based on integral and spectroscopy modes of metal oxide semiconductor field effect transistor and silicon p-n junction detectors. The advantages and limitations of each are discussed. (authors)

Semiconductor detector physics

International Nuclear Information System (INIS)

Equer, B.

1987-01-01

Comprehension of semiconductor detectors follows comprehension of some elements of solid state physics. They are recalled here, limited to the necessary physical principles, that is to say the conductivity. P-n and MIS junctions are discussed in view of their use in detection. Material and structure (MOS, p-n, multilayer, ..) are also reviewed [fr

Hybrid organic/inorganic position-sensitive detectors based on PEDOT:PSS/n-Si

Science.gov (United States)

Javadi, Mohammad; Gholami, Mahdiyeh; Torbatiyan, Hadis; Abdi, Yaser

2018-03-01

Various configurations like p-n junctions, metal-semiconductor Schottky barriers, and metal-oxide-semiconductor structures have been widely used in position-sensitive detectors. In this report, we propose a PEDOT:PSS/n-Si heterojunction as a hybrid organic/inorganic configuration for position-sensitive detectors. The influence of the thickness of the PEDOT:PSS layer, the wavelength of incident light, and the intensity of illumination on the device performance are investigated. The hybrid PSD exhibits very high sensitivity (>100 mV/mm), excellent nonlinearity (0.995) with a response time of heterojunction are very promising for developing a new class of position-sensitive detectors based on the hybrid organic/inorganic junctions.

First fabrication of full 3D-detectors at SINTEF

International Nuclear Information System (INIS)

Hansen, Thor-Erik; Kok, Angela; Hansen, Trond A; Lietaer, Nicolas; Mielnik, Michal; Storaas, Preben; Via, Cinzia Da'; Hasi, Jasmine; Kenney, Chris; Parker, Sherwood

2009-01-01

3D-detectors, with electrodes penetrating through the entire substrates have drawn great interests for high energy physics and medical imaging applications. Since its introduction by C. Kenney et al in 1995, many laboratories have begun research on different 3D-detector structures to simplify and industrialise the fabrication process. SINTEF MiNaLab joined the 3D collaboration in 2006 and started the first 3D fabrication run in 2007. This is the first step in an effort to fabricate affordable 3D-detectors in small to medium size production volumes. The first run was fully completed in February 2008 and preliminary results are promising. Good p-n junction characteristics have been shown on selected devices at the chip level with a leakage current of less than 0.5 nA per pixel. Thus SINTEF is the second laboratory in the world after the Stanford Nanofabrication Facility that has succeeded in demonstrating full 3D-detectors with active edge. A full 3D-stacked detector system were formed by bump-bonding the detectors to the ATLAS readout electronics, and successful particle hit maps using an Am-241 source were recorded. Most modules, however, showed largely increased leakage currents after assembly, which is due to the active edge and p-spray acting as part of the total chip pn-junction and not as a depletion stop. This paper describes the first fabrication and the encountered processing issues. The preliminary measurements on both the individual detector chips and the integrated 3D-stacked modules are discussed. A new lot has now been started on p-type wafers, which offers a more robust configuration with the active edge acting as depletion stop instead of part of the pn-junction.

Current oscillations in avalanche particle detectors with PNIPN-structure

International Nuclear Information System (INIS)

Lukin, K.A.

1995-08-01

The model of an avalanche high energy particle detector consisting of two pn-junctions, connected through an intrinsic semiconductor with a reverse biased voltage applied. This detector is able to generate the oscillatory response on the single particle passage through the structure. The possibility of oscillations leading to chaotic behaviour is pointed out

Photovoltaic radiation detector element

International Nuclear Information System (INIS)

Agouridis, D.C.

1980-01-01

A radiation detector element is formed of a body of semiconductor material, a coating on the body which forms a photovoltaic junction therewith, and a current collector consisting of narrow metallic strips, the aforesaid coating having an opening therein in the edge of which closely approaches but is spaced from the current collector strips

Silicon radiation detectors: materials and applications

International Nuclear Information System (INIS)

Walton, J.T.; Haller, E.E.

1982-10-01

Silicon nuclear radiation detectors are available today in a large variety of sizes and types. This profusion has been made possible by the ever increasing quality and diameter silicon single crystals, new processing technologies and techniques, and innovative detector design. The salient characteristics of the four basic detector groups, diffused junction, ion implanted, surface barrier, and lithium drift are reviewed along with the silicon crystal requirements. Results of crystal imperfections detected by lithium ion compensation are presented. Processing technologies and techniques are described. Two recent novel position-sensitive detector designs are discussed - one in high-energy particle track reconstruction and the other in x-ray angiography. The unique experimental results obtained with these devices are presented

Results obtained in a spectrometry using junction detectors (1962); Resultats en spectrometrie {alpha} a l'aide de ''detecteurs jonction'' (1962)

Energy Technology Data Exchange (ETDEWEB)

Beaumevieille, H; Fontenille, J; Lottgequeue, J P; Longequeue, N; Rabour, C [Commissariat a l' Energie Atomique, Grenoble (France). Centre d' Etudes Nucleaires

1962-07-01

Junction detectors have been used for studying {alpha} spectra obtained by nuclear reactions (p, {alpha}), the protons being produced by an electrostatic accelerator (E{sub p} varying from 100 to 600 keV). Difficulties have been encountered arising from parasitic noise from the accelerator and from the distance (60 metres) between detectors and electronic equipment. Resolution of the counter has been found to be 0.6 per cent with {alpha} from {sup 210}Po and 1.2 pour cent with {alpha} (5.8 MeV) from the reaction {sup 11}B (p, {alpha}{sub 0}). (authors) [French] Des detecteurs a jonction ont ete utilises pour l'etude de spectres {alpha} obtenus par reactions nucleaires (p, {alpha}), les protons etant acceleres par un accelerateur electrostatique (E{sub p} variant de 100 a 600 keV). Des difficultes ont ete recontrees dues aux parasites provenant de l'accelerateur et a la distance des cables (60 metres) entre detecteurs et appareils de mesure. Le pouvoir de resolution de l'ensemble a ete de 0, 6 pour cent avec les {alpha} du {sup 210}Po et de 1,2 pour cent avec les {alpha} (5,8 MeV) de la reaction {sup 11}B (p, {alpha}{sub 0}). (auteurs)

Progress in cryogenic detectors for neutrinos, dark matter and rare processes

International Nuclear Information System (INIS)

Moessbauer, R.L.

1993-01-01

The paper describes the development status of low temperature calorimetric detectors and of detectors based on superconducting tunnel junctions. Such cryogenic detectors, which operate in the millidegree range of temperatures, are under study in efforts to the search for dark matter candidates and rare events and might ultimately also be used to elucidate the evasive nature of the neutrinos. (orig.)

Valve-sparing aortic root replacement and aortic valve repair in a patient with acromegaly and aortic root dilatation

Directory of Open Access Journals (Sweden)

Karel Van Praet

2015-07-01

Full Text Available Aortic regurgitation and dilatation of the aortic root and ascending aorta are severe complications of acromegaly. The current trend for management of an aortic root aneurysm is valve-sparing root replacement as well as restoring the diameter of the aortic sinotubular junction (STJ and annulus. Our case report supports the recommendation that in patients with acromegaly, severe aortic root involvement may indicate the need for surgery.

The Constitution and the Use of Pension Funds Stjórnskipunin og meðferð á fé lífeyrissjóða

Directory of Open Access Journals (Sweden)

Ragnhildur Helgadóttir

2013-06-01

Full Text Available This article discusses the constitutional limitations on requiring Icelandic pension funds to utilize the money deposited in them in a certain manner. The constitutionality of different kinds of state intervention on pension fund spending (permitting vs. requiring the pension funds to participate in schemes that either do or do not yield returns for the funds will be examined. The examination will primarily be based on the Constitution’s article 76 on social rights, article 72 on property rights and unwritten constitutional requirements of legality, proportionality and equality in legislation. It turns out that art. 76 of the Icelandic Constitution carries little weight in this area. However, the protection of property entails that it is constitutionally untenable to either permit or require pension funds to participate in schemes or projects which do not yield a return. The unwritten constitutional principles also lead to the conclusion that some state intervention would be unconstitutional. The conclusion is that the statutory requirement that everyone participate in pension funds leads to considerable constitutional limitations on state intervention in pension fund spending.Í greininni er fjallað um það hvaða takmarkanir stjórnarskrá og meginreglur stjórnskipunarréttarins setja því hversu mikil og hvernig afskipti ríkið geti haft af því hvernig lífeyrissjóðir nota féð sem í þeim er. Fjallað er um hvernig mismunandi tegundir afskipta (þ.e.a.s. heimildir og skyldur til að leggja fé í ýmist arðbær eða óarðbær verkefni af því hvernig lífeyrissjóðir nota féð horfa við gagnvart ákvæðum 76. gr. stjórnarskrár um lágmarksframfærslu og 72. gr. hennar um eignarrétt auk skilyrða um að boð og bönn sé að finna í lögum, hafi samfélagslegan tilgang, séu almenn og gæti jafnræðis og meðalhófs. Í ljós kemur að 76. gr. hefur lítil áhrif vægi í þessu sambandi en vernd eignarréttarins lei

Development and performance of double sided silicon strip detectors

International Nuclear Information System (INIS)

Batignani, G.; Forti, F.; Moneta, L.; Triggiani, G.; Bosisio, L.; Focardi, E.; Giorgi, M.A.; Parrini, G.; Tonelli, G.

1991-01-01

Microstrip silicon detectors with orthogonal readout on opposite sides have been designed and fabricated. The active area of each device is 25 cm 2 and the strip pitch is 25 μm on the junction side and 50 μm on the opposite ohmic side. A space resolution of 15 μm on the junction side (100 μm readout pitch) and 24 μm on the ohmic side (200 μm readout pitch) has been measured. We also report on AC-coupling chips, designed and fabricated in order to allow AC connection of the strips to the amplifiers. These chips are 6.4x5.0 mm 2 and have 100 μm pitch. Both AC-couplers and detectors have been installed as part of the ALEPH minivertex. (orig.)

Development of fountain detectors for spectroscopy of secondary electron in SEM

Energy Technology Data Exchange (ETDEWEB)

Agemura, Toshihide [University of Tsukuba (Japan); Iwai, Hideo [National Institute for Materials Science, Tsukuba (Japan); Sekiguchi, Takashi [University of Tsukuba (Japan); National Institute for Materials Science, Tsukuba (Japan)

2017-07-15

To image the variation of surface potential in semiconductors, energy selective secondary electron detector, named fountain detector (FD), was developed. Two types of grids, planar and spherical, were designed and the superiority of latter was demonstrated. The p-n junction of 4H-SiC was observed using spherical FD and the image was much clear than that using conventional detector. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

BJT detector with FPGA-based read-out for alpha particle monitoring

International Nuclear Information System (INIS)

Tyzhnevyi, V; Dalla Betta, G-F; Rovati, L; Verzellesi, G; Zorzi, N

2011-01-01

In this work we introduce a new prototype of readout electronics (ALPHADET), which was designed for an α-particle detection system based on a bipolar junction transistor (BJT) detector. The system uses an FPGA, which provides many advantages at the stage of prototyping and testing the detector. The main design and electrical features of the board are discussed in this paper, along with selected results from the characterization of ALPHADET coupled to BJT detectors.

BJT detector with FPGA-based read-out for alpha particle monitoring

Energy Technology Data Exchange (ETDEWEB)

Tyzhnevyi, V; Dalla Betta, G-F [Universita di Trento, via Sommarive, 14, 38123 Trento (Italy); Rovati, L [Universita di Modena e Reggio Emilia, via Vignolese 905, 41125 Modena (Italy); Verzellesi, G [Universita di Modena e Reggio Emilia, via Amendola 2, Pad. Morselli, 42100 Reggio Emilia (Italy); Zorzi, N, E-mail: tyzhnevyi@disi.unitn.it [Fondazione Bruno Kessler, via Sommarive, 18, 38123 Trento (Italy)

2011-01-15

In this work we introduce a new prototype of readout electronics (ALPHADET), which was designed for an {alpha}-particle detection system based on a bipolar junction transistor (BJT) detector. The system uses an FPGA, which provides many advantages at the stage of prototyping and testing the detector. The main design and electrical features of the board are discussed in this paper, along with selected results from the characterization of ALPHADET coupled to BJT detectors.

Wedge silicon detectors for the inner trackering system of CMS

International Nuclear Information System (INIS)

Catacchini, E.; Civinini, C.; D'Alessandro, R.; Focardi, E.; Meschini, M.; Parrini, G.; Pieri, M.; Wheadon, R.

1997-01-01

One ''wedge'' double sided silicon detector prototype for the CMS forward inner tracker has been tested both in laboratory and on a high energy particle beam. The results obtained indicate the most reliable solutions for the strip geometry of the junction side. Three different designs of ''wedge'' double sided detectors with different solutions for the ohmic side strip geometry are presented. (orig.)

Response of thick-film bridge junction of high-Tc YBCO to nuclear radiation

International Nuclear Information System (INIS)

Ding Honglin; Wang Jun; Zhang Wanchang

1992-01-01

The response of thick-film Josephson junction based on high-T c YBCO to nuclear radiation is described. The lengths of the junction are 2000 μm, 1000 μm, and 500 μm and the widths are 500 μm, 300 μm and 100 μm. When the junction is irradiated by low energy γ-ray of 59.5 KeV from 241 Am at temperature of 77 K and the transport current I b is more than I c , the authors obtained the reduction of 1.6 mA of critical current and volt-signal as high as 17 μV without amplifier. It has been noted that the signal amplitude is related to the distance between the junction and the radiation source. Finally the advantages and shortcomings of detector based on thick films of high T c YBCO are discussed in the paper

The development of a silicon multiplicity detector system

Energy Technology Data Exchange (ETDEWEB)

Beuttenmuller, R.H.; Kraner, H.W.; Lissauer, D.; Makowiecki, D.; Polychronakos, V.; Radeka, V.; Sondericker, J.; Stephani, D. [Brookhaven National Laboratory, Upton, NY (United States); Barrette, J.; Hall, J.; Mark, S.K.; Pruneau, C.A. [McGill Univ., Montreal, Quebec (Canada); Wolfe, D. [Univ. of New Mexico, Albuquerque (United States); Borenstein, S.R. [York College-CUNY, Jamaica, NY (United States)

1991-12-31

The physics program and the design criteria for a Silicon Pad Detector at RHIC are reviewed. An end cap double sided readout detector configuration for RHIC is presented. Its performance as an on-line and off-line centrality tagging device is studied by means of simulations with Fritiof as the event generator. The results of an in-beam test of a prototype double-sided Si-detector are presented. Good signal-to-noise ratio are obtained with front junction and the resistive back side readout. Good separation between one and two minimum-ionizing particle signals is achieved.

One-third (period three) harmonic generation in microwave-driven Josephson tunnel junctions

DEFF Research Database (Denmark)

Hansen, Jørn Bindslev; Clarke, J.; Mygind, Jesper

1986-01-01

One-third harmonic signals have been generated in the zero voltage state of a Josephson tunnel junction driven with a microwave current in the frequency range 8–20 GHz. The signal was as much as 50 dB above the noise level of the detector with a linewidth of less than 100 Hz. The junction...... parameters and microwave current were measured in situ in separate experiments. The subharmonic generation occurred for ranges of microwave current and frequency that were in reasonable agreement with the results of digital computer simulations. Applied Physics Letters is copyrighted by The American...

Coupled Josephson local oscillator and detector experiments in the terahertz regime

International Nuclear Information System (INIS)

Robertazzi, R.P.; Hallen, H.D.; Buhrman, R.A.

1988-01-01

Recent coupled Josephson junction experiments in the authors' laboratory have demonstrated that high critical current density tunnel junctions can serve as effective local oscillators at frequencies up to and in excess of the gap sum frequency of the junction, i.e. well above 1 Terahertz for a niobium or niobium compound tunnel junction. While the details of the behavior of such a THz. oscillator were found not to be in accord with the predictions of the accepted theory of the A.C. Josephson effect in the gap region significant radiation could be capacitively coupled from the oscillator junction to an adjacent junction, sufficient for SIS mixer experiments at Terahertz frequencies. Research efforts are now under way to further extend and expand these studies. A high critical current density all NbN tunnel junction system is now under development for Terahertz applications and a new set of coupled Josephson oscillator - SIS detector experiments is being initiated using NbN tunnel junctions. In this paper the authors review the original coupled junction high frequency experiments and report on the recent progress of the current NbN tunnel junction experiments

Heavy-ion irradiation effects on passivated implanted planar silicon detectors

International Nuclear Information System (INIS)

Coster, W. de; Brijs, B.; Vandervorst, W.; Burger, P.

1992-01-01

Commercially available p + nn + passivated implanted planar silicon detectors have been shown to be very performing for standard RBS-analysis with 4 He beams. Lifetimes are found to range up till >10 9 particles. The end of lifetime occurs concurrent with internal breakdown of the detector. Inverted n + np + detectors where the junction is located well outside the damage region, are expected to be less sensitive to the radiation damage and to have a higher lifetime. In the present paper the characteristics for heavy-ion detection of both types of detector are investigated and discussed upon. (orig.)

The two Josephson junction flux qubit with large tunneling amplitude

International Nuclear Information System (INIS)

Shnurkov, V.I.; Soroka, A.A.; Mel'nik, S.I.

2008-01-01

In this paper we discuss solid-state nanoelectronic realizations of Josephson flux qubits with large tunneling amplitude between the two macroscopic states. The latter can be controlled via the height and form of the potential barrier, which is determined by quantum-state engineering of the flux qubit circuit. The simplest circuit of the flux qubit is a superconducting loop interrupted by a Josephson nanoscale tunnel junction. The tunneling amplitude between two macroscopically different states can be increased substantially by engineering of the qubit circuit if the tunnel junction is replaced by a ScS contact. However, only Josephson tunnel junctions are particularly suitable for large-scale integration circuits and quantum detectors with present-day technology. To overcome this difficulty we consider here a flux qubit with high energy-level separation between the 'ground' and 'excited' states, consisting of a superconducting loop with two low-capacitance Josephson tunnel junctions in series. We demonstrate that for real parameters of resonant superposition between the two macroscopic states the tunneling amplitude can reach values greater than 1 K. Analytical results for the tunneling amplitude obtained within the semiclassical approximation by the instanton technique show good correlation with a numerical solution

Realization of an automatic set up to measure electrical characteristic of solid state detectors

International Nuclear Information System (INIS)

Manfredotti, C.; Crosetto, D.; Gabutti, A.; Gervino, G.; Varesio, R.

1986-01-01

An automatic set-up is described to study electrical properties of silicon detectors for nuclear research. Particularly, I-V characteristics from silicon junction prototype detectors and amorphous samples to test the data acquisition system, are presented. This set-up joins a low cost to good versatility that makes it very useful in wide application ranges in silicon detector electrical characterization

Os embargos de declaraçãoe o prequestionamento ficto à luz do Novo Código de Processo Civil: uma breve análise acerca das súmulas 356/STF e 211/STJ

Directory of Open Access Journals (Sweden)

Lílian Sousa Terra Leal

2017-05-01

Full Text Available Uma das finalidades do embargo de declaração é suprimir a omissão em acórdão ou decisão quanto à matéria que se quer discutir, a fim de se atingir o prequestionamento necessário para interposição de recurso nos tribunais superiores. Diante disso, surgem algumas indagações: o que fazer na hipótese em que, mesmo interpostos os embargos, a omissão não for suprida? Estaria caracterizado, nesse caso, o prequestionamente necessário à admissão do recurso Especial e Extraordinário (prequesstionamento ficto? O presente trabalho se justifica na medida em que trata de um tema que não estava sedimentado antes da entrada em vigor do Novo Código de Processo Civil. Isso porque, de um lado, o STJ possui entendimento de que é inadmissível recurso especial quando a questão não foi apreciada pelo Tribunal a quo, ainda que tenham sido opostos embargos declaratórios nesse sentido (súmula 211, STJ. De outro lado, o STF, por meio da súmula 356, consolidou o entendimento de que restará configurado o prequestionamento necessário ao acolhimento do Recurso Extraordinário se forem opostos embargos declaratórios, ainda que a omissão não tenha sido suprida. Assim, tem-se que o tema em questão possui grande relevância no âmbito jurídico, especialmente com a abordagem dada pelo Novo CPC, devendo ser melhor estudado e analisado em âmbito acadêmico.

Comparison of Detector Technologies for CAPS

Science.gov (United States)

Stockum, Jana L.

2005-01-01

In this paper, several different detectors are examined for use in a Comet/Asteroid Protection System (CAPS), a conceptual study for a possible future space-based system. Each detector will be examined for its future (25 years or more in the future) ability to find and track near-Earth Objects (NEOs) from a space-based detection platform. Within the CAPS study are several teams of people who each focus on different aspects of the system concept. This study s focus is on detection devices. In particular, evaluations on the following devices have been made: charge-coupled devices (CCDs), charge-injected devices (CIDs), superconducting tunneling junctions (STJs), and transition edge sensors (TESs). These devices can be separated into two main categories; the first category includes detectors that are currently being widely utilized, such as CCDs and CIDs. The second category includes experimental detectors, such as STJs and TESs. After the discussion of the detectors themselves, there will be a section devoted to the explicit use of these detectors with CAPS.

Solid state detector module

International Nuclear Information System (INIS)

Hoffman, D. M.

1985-01-01

A solid state detector in which each scintillator is optimally configured and coupled with its associated sensing diode in a way which exploits light piping effects to enhance efficiency, and at the same time provide a detector which is modular in nature. To achieve light piping, the scintillator crystal is oriented such that its sides conform with the crystal cleavage plane, and the sides are highly polished. An array of tungsten collimator plates define the individual channels. Multi-channel scintillator/diode modules are mounted behind and in registry with the plurality of collimator plates. A plurality of scintillators are bonded together after coating the surfaces thereof to minimize optical crosstalk. After lapping the face of the scintillator module, it is then bonded to a diode module with individual scintillators in registration with individual diodes. The module is then positioned in the detector array with collimator plates at the junctions between the scintillators

NIS tunnel junction as an x-ray photon sensor

Science.gov (United States)

Azgui, Fatma; Mears, Carl A.; Labov, Simon E.; Frank, Matthias A.; Sadoulet, Bernard; Brunet, E.; Hiller, Lawrence J.; Lindeman, Mark A.; Netel, Harrie

1995-09-01

This work presents the first results of our development of normal-insulating-superconducting tunnel junctions used as energy dispersive detectors for low energy particles. The device described here is a Ag/Al(subscript 2)O(subscript 3)/Al tunnel junction of area 1.5 multiplied by 10(superscript 4) micrometer squared with thicknesses of 200 nm for the normal Ag strip and 100 nm for the superconducting Al film. Two different high-speed SQUID systems manufactured by quantum magnetics and HYPRES, respectively, were used for the readout of this device. At 80 mK bath temperature we obtained an energy resolution DeltaE(subscript FWHM) equals 250 eV for 5.89 keV x rays absorbed directly in the normal metal. This energy resolution appears to be limited in large part by the observed strong position dependence of the device response.

Sensors for ultra-fast silicon detectors

Energy Technology Data Exchange (ETDEWEB)

Sadrozinski, H.F.-W., E-mail: hartmut@scipp.ucsc.edu [Santa Cruz Institute for Particle Physics, UC Santa Cruz, Santa Cruz, CA 95064 (United States); Baselga, M.; Ely, S.; Fadeyev, V.; Galloway, Z.; Ngo, J.; Parker, C.; Schumacher, D.; Seiden, A.; Zatserklyaniy, A. [Santa Cruz Institute for Particle Physics, UC Santa Cruz, Santa Cruz, CA 95064 (United States); Cartiglia, N. [INFN Torino, Torino (Italy); Pellegrini, G.; Fernández-Martínez, P.; Greco, V.; Hidalgo, S.; Quirion, D. [Centro Nacional de Microelectrónica, IMB-CNM-CSIC, Barcelona (Spain)

2014-11-21

We report on electrical and charge collection tests of silicon sensors with internal gain as part of our development of ultra-fast silicon detectors. Using C–V and α TCT measurements, we investigate the non-uniform doping profile of so-called low-gain avalanche detectors (LGAD). These are n-on-p pad sensors with charge multiplication due to the presence of a thin, low-resistivity diffusion layer below the junction, obtained with a highly doped implant. We compare the bias dependence of the pulse shapes of traditional sensors and of LGAD sensors with different dopant density of the diffusion layer, and extract the internal gain.

Sensors for ultra-fast silicon detectors

International Nuclear Information System (INIS)

Sadrozinski, H.F.-W.; Baselga, M.; Ely, S.; Fadeyev, V.; Galloway, Z.; Ngo, J.; Parker, C.; Schumacher, D.; Seiden, A.; Zatserklyaniy, A.; Cartiglia, N.; Pellegrini, G.; Fernández-Martínez, P.; Greco, V.; Hidalgo, S.; Quirion, D.

2014-01-01

We report on electrical and charge collection tests of silicon sensors with internal gain as part of our development of ultra-fast silicon detectors. Using C–V and α TCT measurements, we investigate the non-uniform doping profile of so-called low-gain avalanche detectors (LGAD). These are n-on-p pad sensors with charge multiplication due to the presence of a thin, low-resistivity diffusion layer below the junction, obtained with a highly doped implant. We compare the bias dependence of the pulse shapes of traditional sensors and of LGAD sensors with different dopant density of the diffusion layer, and extract the internal gain

Linker-dependent Junction Formation Probability in Single-Molecule Junctions

Energy Technology Data Exchange (ETDEWEB)

Yoo, Pil Sun; Kim, Taekyeong [HankukUniversity of Foreign Studies, Yongin (Korea, Republic of)

2015-01-15

We compare the junction formation probabilities of single-molecule junctions with different linker molecules by using a scanning tunneling microscope-based break-junction technique. We found that the junction formation probability varies as SH > SMe > NH2 for the benzene backbone molecule with different types of anchoring groups, through quantitative statistical analysis. These results are attributed to different bonding forces according to the linker groups formed with Au atoms in the electrodes, which is consistent with previous works. Our work allows a better understanding of the contact chemistry in the metal.molecule junction for future molecular electronic devices.

Passivation layer of Si/Li ionizing radiation detectors

International Nuclear Information System (INIS)

Vidra, M.; Reznicek, L.

1992-01-01

The proposed passivating layer of Si/Li ionizing radiation detectors ensures a good long-time stability of their volt-ampere characteristics and noise properties. The layer can be applied to protect the detector junction surface in systems cyclically cooled to liquid nitrogen temperature, and in preamplifier feedback optoelectronics to prevent light from entering into the detector. The passivating layer is obtained by evaporating solvent from a cured suspension of boron nitride or aluminium oxide powder in a solution containing piceine and a nonpolar solvent such as toluene. The weight proportions are 1 to 8 parts of piceine, 3 to 9 parts of boron nitride or aluminium oxide, and 1 to 10 parts of the nonpolar solvent. (Z.S.)

First results on the charge collection properties of segmented detectors made with p-type bulk silicon

International Nuclear Information System (INIS)

Casse, G.; Allport, P.P.; Bowcock, T.J.V.; Greenall, A.; Hanlon, M.; Jackson, J.N.

2002-01-01

Radiation damage of n-type bulk detectors introduces stable defects acting as effective p-type doping and leads to the change of the conductivity type of the silicon substrate (type inversion) after a fluence of a few times 10 13 protons cm -2 . The diode junction after inversion migrates from the original side to the back plane of the detector. The migration of the junction can be prevented using silicon detectors with p-type substrates. Furthermore, the use of n-side readout gives higher charge collection efficiency for segmented devices operated below the full depletion voltage. Large area (∼6.4x6.4 cm 2 ) capacitively coupled 80 μm pitch detectors using polysilicon bias resistors have been fabricated on p-type substrates (n-in-p diode structure). These detectors have been irradiated with 24 GeV/c protons to an integrated fluence of 3x10 14 cm -2 and kept for 7 days at 25 deg. C to reach the broad minimum of the annealing curve. Results are presented on the comparison of their charge collection properties with detectors using p-strip read-out after corresponding dose and annealing

Nuclear radiation detection with superconducting tunnel junctions

International Nuclear Information System (INIS)

Kurakado, Masahiko

1984-01-01

Since the gap energy of superconductors is as small as 1 meV and 1/1000 of that of semiconductors, it is expected that the number of electron-hole pairs produced in superconductors by radiation is several thousands times as many as the pairs in semiconductors. Therefore, high sensitivity and high resolution radiation detectors may be manufactured by using superconductors. A computer simulation of the cascade excitation process of electrons was carried out. The experimental study was performed by using Sn junctions. The variation of transient voltage was measured by the constant current method. The alpha particles from Po-210 were measured, and the generation of quasi particles was confirmed. The relaxation time of signals was measured by using pulsed laser beam. It was found that the superconductors just after the incidence of radiation became nonequilibrium. The typical alpha spectra were obtained by cooling the superconductors to 0.32 K. The detector is still under development. The problem is leakage current. (Kato, T.)

Large spin accumulation due to spin-charge coupling across a break-junction

Science.gov (United States)

Chen, Shuhan; Zou, Han; Chui, Siu-Tat; Ji, Yi

2013-03-01

We investigate large spin signals in break-junction nonlocal spin valves (NLSV). The break-junction is a nanometer-sized vacuum tunneling gap between the spin detector and the nonmagnetic channel, formed by electro-static discharge. The spin signals can be either inverted or non-inverted and the magnitudes are much larger than those of standard NLSV. Spin signals with high percentage values (10% - 0%) have been observed. When the frequency of the a.c. modulation is varied, the absolute magnitudes of signals remain the same although the percentage values change. These observations affirm the nonlocal nature of the measurements and rule out local magnetoresistive effects. Owing to the spin-charge coupling across the break-junction, the spin accumulation in a ferromagnet splits into two terms. One term decays on the charge screening length (0.1 nm) and the other decays on the spin diffusion length (10 nm nm). The magnitude of the former is proportional to the resistance of the junction. Therefore a highly resistive break-junction leads to a large spin accumulation and thereby a large spin signal. The signs of the spin signal are determined by the relationship between spin-dependent conductivities, diffusion constants, and density of states of the ferromagnet. This work was supported by US DOE grant No. DE-FG02-07ER46374.

Observation of gap inhomogeneity in superconducting aluminum tunnel junctions

International Nuclear Information System (INIS)

Gilmartin, H.R.

1982-01-01

Experiments using a novel technique to investigate spatial variations in the superconducting gap parameter of aluminum films driven out of equilibrium by intense tunnel injection are described. The technique features fine spatial and energy resolution of the gap parameter. The experiments employed a finely focused laser spot scanned across the surface of a double tunnel junction sandwich to produce a very weak electrical signal that was analyzed to determine the gap parameter as a function of position in the plane of the device. Technical aspects of the problem are emphasized, since a new technique is presented. An elaborate explanation of the origin and analysis of the laser induced signal is given, as well as a detailed description of the experimental apparatus. Very briefly, the principle of operation is that a large flux of quasiparticles is injected through the lower junction of the sandwich into the middle aluminum film, and the upper junction serves to detect the effects of that injection. The middle film takes on two or more values of the gap parameter under injection, presumably indicating spatial variation. The presence of a small laser spot on a given point on the device perturbs the potential on the detector junction very slightly. That perturbation is measured as a function of bias current to determine the gap parameter of the middle film at that point. The spot is scanned in a raster pattern to produce a picture of the space dependence of the gap parameter

Double-sided FoxFET biased microstrip detectors

International Nuclear Information System (INIS)

Allport, P.P.; Carter, J.R.; Dunwoody, U.C.; Gibson, V.; Goodrick, M.J.; Beck, G.A.; Carter, A.A.; Martin, A.J.; Pritchard, T.W.; Bullough, M.A.; Greenwood, N.M.; Lucas, A.D.; Wilburn, C.D.

1994-01-01

The use of the field effect transistor, integrated onto AC-coupled silicon detectors, as a novel technique for biasing the implanted p + strips [P.P. Allport et al., Nucl. Instr. and Meth. A 310 (1991) 155], was first employed for the OPAL microvertex detector. The detector has proved very successful, with ladders of three single-sided detectors showing signal/noise of 22 : 1 with MX5 readout electronics [P.P. Allport et al., Nucl. Instr. and Meth. A 324 (1993) 34; Nucl. Phys. B (Proc. Suppl.) 32 (1993) 208]. This technique has been extended to bias also the n + strips and p strips on the ohmic side of a double-sided detector [P.P. Allport et al., Nucl. Instr. and Meth. A, to be submitted]. Full-size detectors with orthogonal readout have been fabricated by Micron and tested with MX7 readout on both sides. Both the junction and ohmic sides of these detectors have similar signal/noise values to those for single-sided wafers [P.P. Allport et al., Nucl. Instr. and Meth. A, to be submitted]. Test structures have been irradiated with beta particles to study the radiation hardness of the devices, and probe station electrical measurements of the detectors and test structures are presented. ((orig.))

Current responsivity of semiconductor superlattice THz-photon detectors

DEFF Research Database (Denmark)

Ignatov, Anatoly A.; Jauho, Antti-Pekka

1999-01-01

The current responsivity of a semiconductor superlattice THz-photon detector is calculated using an equivalent circuit model which takes into account the finite matching efficiency between a detector antenna and the superlattice in the presence of parasitic losses. Calculations performed for curr......The current responsivity of a semiconductor superlattice THz-photon detector is calculated using an equivalent circuit model which takes into account the finite matching efficiency between a detector antenna and the superlattice in the presence of parasitic losses. Calculations performed...... for currently available superlattice diodes show that both the magnitudes and the roll-off frequencies of the responsivity are strongly influenced by an excitation of hybrid plasma-Bloch oscillations which are found to be eigenmodes of the system in the THz-frequency band. The expected room temperature values...... of the responsivity (2–3 A/W in the 1–3 THz-frequency band) range up to several percents of the quantum efficiency e/[h-bar] omega of an ideal superconductor tunnel junction detector. Properly designed semiconductor superlattice detectors may thus demonstrate better room temperature THz-photon responsivity than...

Strip type radiation detector and method of making same

International Nuclear Information System (INIS)

Jantsch, O.; Feigt, I.; Willig, W.R.

1976-01-01

An improved strip detector and a method for making such a detector in which a high resistivity N conduction semiconductor body has electrode strips formed thereon by diffusion is described. The strips are formed so as to be covered by an oxide layer at the surface point of the PN junction and in which the opposite side of the semiconductor body then has a substantial amount of material etched away to form a thin semiconductor upon which strip electrodes which are perpendicular to the electrodes on the first side are then placed

Numerical analysis of edge effects in side illuminated strip detectors for digital radiology

CERN Document Server

Krizaj, D

2000-01-01

The influence of edge defects on side illuminated X-ray strip detectors for digital radiology is investigated by numerical device modeling. By assuming positive fixed oxide charges on side and top surfaces simulations have shown strong curvature of the equipotential lines in the edge region. A fraction of the edge generated current surpasses the edge guard-ring junction and is collected by the readout strips. As a consequence, strips cannot be placed close to the edge of the structure and collection efficiency is reduced. An n-on-n instead of a p-on-n strip detector is proposed enabling collection of edge generated carriers by a very narrow guard-ring junction and placement of the readout strip close to the edge without increase of the strip leakage current.

A radon (thoron) daughter personal alpha-dosimeter of the passive type using a diffused-junction detector and an electrostatic collector

International Nuclear Information System (INIS)

Bigu, J.; Frattini, A.

1984-05-01

A solid-state alpha-dosimeter has been designed and found to be suitable for personal and environmental radon-thoron daughter monitoring. The dosimeter basically consists of an electrostatic collector and an alpha-particle counting system with spectroscopy capabilities. The sensitive volume (∼20 cm 3 ) of the electrostatic collector consists of a cylindrically-shaped metal wire screen and a diffused-junction silicon alpha-detector covered with a thin aluminized mylar sheet. A DC voltage (∼450 V) is applied between the wire screen and the mylar sheet, the latter held at negative potential relative to the metal screen. Data can be retrieved during or after sampling by means of a micro-computer (Epson HX20) via a RS-232 communcation interface unit. The dosimeter has been calibrated in a large (26 m 3 ) radon/thoron test facility. A linear relationship was found between radon gas concentration and radon daughter Working Level, and the dosimeter's alpha-count. The dosimeter is mounted on top of an ordinary miner's cap lamp battery and is ideally suited for personal monitoring in underground uranium mines and other working areas. The dosimeter presented here is a considerably improved version of an earlier prototype

Gap Junctions

Science.gov (United States)

Nielsen, Morten Schak; Axelsen, Lene Nygaard; Sorgen, Paul L.; Verma, Vandana; Delmar, Mario; Holstein-Rathlou, Niels-Henrik

2013-01-01

Gap junctions are essential to the function of multicellular animals, which require a high degree of coordination between cells. In vertebrates, gap junctions comprise connexins and currently 21 connexins are known in humans. The functions of gap junctions are highly diverse and include exchange of metabolites and electrical signals between cells, as well as functions, which are apparently unrelated to intercellular communication. Given the diversity of gap junction physiology, regulation of gap junction activity is complex. The structure of the various connexins is known to some extent; and structural rearrangements and intramolecular interactions are important for regulation of channel function. Intercellular coupling is further regulated by the number and activity of channels present in gap junctional plaques. The number of connexins in cell-cell channels is regulated by controlling transcription, translation, trafficking, and degradation; and all of these processes are under strict control. Once in the membrane, channel activity is determined by the conductive properties of the connexin involved, which can be regulated by voltage and chemical gating, as well as a large number of posttranslational modifications. The aim of the present article is to review our current knowledge on the structure, regulation, function, and pharmacology of gap junctions. This will be supported by examples of how different connexins and their regulation act in concert to achieve appropriate physiological control, and how disturbances of connexin function can lead to disease. © 2012 American Physiological Society. Compr Physiol 2:1981-2035, 2012. PMID:23723031

Germanium junction detectors. Theoretical and practical factors governing their use in radiation spectrometry; Detecteurs a jonction au germanium. Elements theoriques et pratiques pour l'utilisation en spectrometrie de rayonnements

Energy Technology Data Exchange (ETDEWEB)

Hors, M; Philis, C [Commissariat a l' Energie Atomique, Saclay (France). Centre d' Etudes Nucleaires

1967-07-01

Semi-conductor detectors have recently greatly increased the possibilities available to nuclear spectroscopists for the study of {alpha}, {beta} and {gamma} radiations. Their use in radio-chemistry has encouraged us to study their principle, their mechanism and also the conditions under which they can be used. The first part, which is theoretical, consists of a summary of what should be known concerning the best use of junction detectors, in particular Ge (Li) detectors. The second part, which is experimental, summarizes the laboratory work carried out over a period of one year on Ge (Li) detectors. Stress is laid on the possibilities presented by the use of these detectors as photo-electric spectrometers, and also on the precautions required. Amongst the numerous results presented, the resolution of 2.52 keV obtained for the {gamma} radiation of 145.5 keV for {sup 141}Ce may be particularly noted. (authors) [French] Les detecteurs a semi-conducteurs ont recemment accru les possibilites offertes aux spectroscopistes nucleaires pour l'etude des radiations {alpha}, {beta}, {gamma}. Leurs utilisations en radiochimie nous ont incite a en etudier le principe, le mecanisme et d'autre part les conditions d'emploi. La premiere partie, theorique, rappelle l'essentiel de ce qu'il est utile de connaitre pour une utilisation optimale des detecteurs a jonctions et en particulier des detecteurs Ge (Li). La deuxieme partie, experimentale, resume les travaux realises au laboratoire pendant un an avec des detecteurs Ge (Li). Nous insistons sur les possibilites offertes et les precautions a prendre dans l'utilisation de ces detecteurs comme spectrometres photoelectriques. Parmi les nombreux resultats presentes, citons la resolution de 2,52 keV obtenue pour le rayonnement {gamma} de 145 f5 keV du {sup 141}Ce. (auteurs)

Enhancement of UV photodetector properties of ZnO nanorods/PEDOT:PSS Schottky junction by NGQD sensitization along with conductivity improvement of PEDOT:PSS by DMSO additive

Science.gov (United States)

Dhar, Saurab; Majumder, Tanmoy; Chakraborty, Pinak; Mondal, Suvra Prakash

2018-04-01

Schottky junction ultraviolet (UV) photodetector was fabricated by spin coating a hole conducting polymer, poly 3,4-ethylenedioxythiophene: polystyrene sulfonate (PEDOT:PSS) on hydrothermally grown zinc oxide (ZnO) nanorod arrays. The UV detector performance was significantly improved two step process. Firstly, ZnO nanorods were modified by sensitizing N doped grapheme quantum dots (NGQDs) for better photoresponce behavior. Afterwards, the junction properties as well as photoresponse was enhanced by modifying electrical conductivity of PEDOT:PSS layer with organic solvent (DMSO). Our NGQD decorated ZnO NRs/DMSO-PEDOT:PSS Schottky junction device demonstrated superior external quantum efficiency (EQE ˜ 90063 %) and responsivity (Rλ˜247 A/W) at 340 nm wavelength and -1V external bias. The response and recovery times of the final photodetector device was very fast compared to GQD as well as NGQD modified and pristine ZnO nanorod based detectors.

Technology for the compatible integration of silicon detectors with readout electronics

International Nuclear Information System (INIS)

Zimmer, G.

1984-01-01

Compatible integration of detectors and readout electronics on the same silicon substrate is of growing interest. As the methods of microelectronics technology have already been adapted for detector fabrication, a common technology basis for detectors and readout electronics is available. CMOS technology exhibits most attractive features for the compatible realization of readout electronics when advanced LSI processing steps are combined with detector requirements. The essential requirements for compatible integration are the availability of high resistivity (100)-oriented single crystalline silicon substrate, the formation of suitably doped areas for MOS circuits and the isolation of the low voltage circuit from the detector operated at much higher supply voltage. Junction isolation as a first approach based on present production technology and dielectric isolation based on an advanced SOI-LSI technology are discussed as the most promising solutions for present and future applications, respectively. (orig.)

Novel Photon-Counting Detectors for Free-Space Communication

Science.gov (United States)

Krainak, Michael A.; Yang, Guan; Sun, Xiaoli; Lu, Wei; Merritt, Scott; Beck, Jeff

2016-01-01

We present performance data for novel photon counting detectors for free space optical communication. NASA GSFC is testing the performance of three novel photon counting detectors 1) a 2x8 mercury cadmium telluride avalanche array made by DRS Inc. 2) a commercial 2880 silicon avalanche photodiode array and 3) a prototype resonant cavity silicon avalanche photodiode array. We will present and compare dark count, photon detection efficiency, wavelength response and communication performance data for these detectors. We discuss system wavelength trades and architectures for optimizing overall communication link sensitivity, data rate and cost performance. The HgCdTe APD array has photon detection efficiencies of greater than 50 were routinely demonstrated across 5 arrays, with one array reaching a maximum PDE of 70. High resolution pixel-surface spot scans were performed and the junction diameters of the diodes were measured. The junction diameter was decreased from 31 m to 25 m resulting in a 2x increase in e-APD gain from 470 on the 2010 array to 1100 on the array delivered to NASA GSFC. Mean single photon SNRs of over 12 were demonstrated at excess noise factors of 1.2-1.3.The commercial silicon APD array has a fast output with rise times of 300ps and pulse widths of 600ps. Received and filtered signals from the entire array are multiplexed onto this single fast output. The prototype resonant cavity silicon APD array is being developed for use at 1 micron wavelength.

Measurements of possible type inversion in silicon junction detectors by fast neutron irradiation

International Nuclear Information System (INIS)

Li, Z.; Kraner, H.W.

1991-05-01

The successful application of silicon position sensitive detectors in experiments at the SSC or LHC depends on an accurate assessment of the radiation tolerance of this detector species. In particular, fast neutrons (E av = 1 MeV) produce bulk displacement damage that is projected, from estimated fluences, to cause increased generation (leakage) current, charge collection deficiencies, resistivity changes and possibly semiconductor type change or inversion. Whereas the leakage current increase was believed to be the major concern for estimated fluences of 10 12 n/cm 2 experiment year at the initial SSC luminosity of 10 33 /cm 2 -sec, increased luminosity and exposure time has raised the possible exposure to 10 14 n/cm 2 , which opens the door for the several other radiation effects suggested above to play observable and significant roles in detector degradation or change. 17 refs., 19 figs

Four-junction superconducting circuit

Science.gov (United States)

Qiu, Yueyin; Xiong, Wei; He, Xiao-Ling; Li, Tie-Fu; You, J. Q.

2016-01-01

We develop a theory for the quantum circuit consisting of a superconducting loop interrupted by four Josephson junctions and pierced by a magnetic flux (either static or time-dependent). In addition to the similarity with the typical three-junction flux qubit in the double-well regime, we demonstrate the difference of the four-junction circuit from its three-junction analogue, including its advantages over the latter. Moreover, the four-junction circuit in the single-well regime is also investigated. Our theory provides a tool to explore the physical properties of this four-junction superconducting circuit. PMID:27356619

Impulse method for temperature measurement of silicon detectors

International Nuclear Information System (INIS)

Kushpil, V.V.; Kushpil, S.A.; Petracek, V.

1999-01-01

A new impulse method of temperature measurement based on switching characteristic of the P-N junction is described. Temperature of silicon detector can be determined, due to the strong temperature dependence of minority carrier lifetime, from the charge registered during the switching-off process. The method has been tested in temperature range 25 - 60 deg C. Advantages, drawbacks and precision of this method are discussed

The effect of charge collection recovery in silicon p-n junction detectors irradiated by different particles

International Nuclear Information System (INIS)

Verbitskaya, E.; Abreu, M.; Anbinderis, P.; Anbinderis, T.; D'Ambrosio, N.; Boer, W. de; Borchi, E.; Borer, K.; Bruzzi, M.; Buontempo, S.; Casagrande, L.; Chen, W.; Cindro, V.; Dezillie, B.; Dierlamm, A.; Eremin, V.; Gaubas, E.; Gorbatenko, V.; Granata, V.; Grigoriev, E.; Grohmann, S.; Hauler, F.; Heijne, E.; Heising, S.; Hempel, O.; Herzog, R.; Haerkoenen, J.; Ilyashenko, I.; Janos, S.; Jungermann, L.; Kalesinskas, V.; Kapturauskas, J.; Laiho, R.; Li, Z.; Mandic, I.; De Masi, Rita; Menichelli, D.; Mikuz, M.; Militaru, O.; Niinikoski, T.O.; O'Shea, V.; Pagano, S.; Palmieri, V.G.; Paul, S.; Perea Solano, B.; Piotrzkowski, K.; Pirollo, S.; Pretzl, K.; Rato Mendes, P.; Ruggiero, G.; Smith, K.; Sonderegger, P.; Sousa, P.; Tuominen, E.; Vaitkus, J.; Da Via, C.; Wobst, E.; Zavrtanik, M.

2003-01-01

The recovery of the charge collection efficiency (CCE) at low temperatures, the so-called 'Lazarus effect', was studied in Si detectors irradiated by fast reactor neutrons, by protons of medium and high energy, by pions and by gamma-rays. The experimental results show that the Lazarus effect is observed: (a) after all types of irradiation; (b) before and after space charge sign inversion; (c) only in detectors that are biased at voltages resulting in partial depletion at room temperature. The experimental temperature dependence of the CCE for proton-irradiated detectors shows non-monotonic behaviour with a maximum at a temperature defined as the CCE recovery temperature. The model of the effect for proton-irradiated detectors agrees well with that developed earlier for detectors irradiated by neutrons. The same midgap acceptor-type and donor-type levels are responsible for the Lazarus effect in detectors irradiated by neutrons and by protons. A new, abnormal 'zigzag'-shaped temperature dependence of the CCE was observed for detectors irradiated by all particles (neutrons, protons and pions) and by an ultra-high dose of γ-rays, when operating at low bias voltages. This effect is explained in the framework of the double-peak electric field distribution model for heavily irradiated detectors. The redistribution of the space charge region depth between the depleted regions adjacent to p + and n + contacts is responsible for the 'zigzag'- shaped curves. It is shown that the CCE recovery temperature increases with reverse bias in all detectors, regardless of the type of radiation

Performance of a beam telescope using double sided silicon microstrip detectors

International Nuclear Information System (INIS)

Fischer, P.; Menke, S.; Wermes, N.

1995-04-01

A beam telescope consisting of four double sided, DC coupled microstrip detectors with VLSI readout electronics has been built and tested in a 70 GeV μ - beam at CERN. A signal to noise ratio of 53:1 and a spatial resolution of 2.7 μm (junction side) and 4.8 μm (ohmic side) have been observed on the best detectors. A telescope performance for a particle track of σ xy =2-3 μm and σ slope =2-3 μrad on the front face of a test object was achieved. (orig.)

Ballistic Graphene Josephson Junctions from the Short to the Long Junction Regimes.

Science.gov (United States)

Borzenets, I V; Amet, F; Ke, C T; Draelos, A W; Wei, M T; Seredinski, A; Watanabe, K; Taniguchi, T; Bomze, Y; Yamamoto, M; Tarucha, S; Finkelstein, G

2016-12-02

We investigate the critical current I_{C} of ballistic Josephson junctions made of encapsulated graphene-boron-nitride heterostructures. We observe a crossover from the short to the long junction regimes as the length of the device increases. In long ballistic junctions, I_{C} is found to scale as ∝exp(-k_{B}T/δE). The extracted energies δE are independent of the carrier density and proportional to the level spacing of the ballistic cavity. As T→0 the critical current of a long (or short) junction saturates at a level determined by the product of δE (or Δ) and the number of the junction's transversal modes.

Equivalent Josephson junctions

International Nuclear Information System (INIS)

Boyadzhiev, T.L.; ); Semerdzhieva, E.G.; Shukrinov, Yu.M.; Fiziko-Tekhnicheskij Inst., Dushanbe

2008-01-01

The magnetic field dependences of critical current are numerically constructed for a long Josephson junction with a shunt- or resistor-type microscopic inhomogeneities and compared to the critical curve of a junction with exponentially varying width. The numerical results show that it is possible to replace the distributed inhomogeneity of a long Josephson junction by an inhomogeneity localized at one of its ends, which has certain technological advantages. It is also shown that the critical curves of junctions with exponentially varying width and inhomogeneities localized at the ends are unaffected by the mixed fluxon-antifluxon distributions of the magnetic flux [ru

Junction and circuit fabrication

International Nuclear Information System (INIS)

Jackel, L.D.

1980-01-01

Great strides have been made in Josephson junction fabrication in the four years since the first IC SQUID meeting. Advances in lithography have allowed the production of devices with planar dimensions as small as a few hundred angstroms. Improved technology has provided ultra-high sensitivity SQUIDS, high-efficiency low-noise mixers, and complex integrated circuits. This review highlights some of the new fabrication procedures. The review consists of three parts. Part 1 is a short summary of the requirements on junctions for various applications. Part 2 reviews intergrated circuit fabrication, including tunnel junction logic circuits made at IBM and Bell Labs, and microbridge radiation sources made at SUNY at Stony Brook. Part 3 describes new junction fabrication techniques, the major emphasis of this review. This part includes a discussion of small oxide-barrier tunnel junctions, semiconductor barrier junctions, and microbridge junctions. Part 3 concludes by considering very fine lithography and limitations to miniaturization. (orig.)

Operation of heavily irradiated silicon detectors in non-depletion mode

International Nuclear Information System (INIS)

Verbitskaya, E.; Eremin, V.; Ilyashenko, I.; Li, Z.; Haerkoenen, J.; Tuovinen, E.; Luukka, P.

2006-01-01

The non-depletion detector operation mode has generally been disregarded as an option in high-energy physics experiments. In this paper, the non-depletion operation is examined by detailed analysis of the electric field distribution and the current pulse response of heavily irradiated silicon (Si) detectors. The previously reported model of double junction in heavily irradiated Si detector is further developed and a simulation of the current pulse response has been performed. It is shown that detectors can operate in a non-depletion mode due to the fact that the value of the electric field in a non-depleted region is high enough for efficient carrier drift. This electric field originates from the current flow through the detector and a consequent drop of the potential across high-resistivity bulk of a non-depleted region. It is anticipated that the electric field in a non-depleted region, which is still electrically neutral, increases with fluence that improves the non-depleted detector operation. Consideration of the electric field in a non-depleted region allows the explanation of the recorded double-peak current pulse shape of heavily irradiated Si detectors and definition of the requirements for the detector operational conditions. Detailed reconstruction of the electric field distribution gives new information on radiation effects in Si detectors

Criticality monitoring with digital systems and solid state neutron detectors

International Nuclear Information System (INIS)

Willhoite, S.B.

1984-01-01

A commercially available system for criticality monitoring combines the well established technology of digital radiation monitoring with state-of-the art detector systems capable of detecting criticality excursions of varying length and intensity with a high degree of confidence. The field microcomputer servicing the detector clusters contains hardware and software to acquire detector information in both the digital count rate and bit sensing modes supported by the criticality detectors. In both cases special criticality logic in the field microcomputer is used to determine the validity of the criticality event. The solid-state neutron detector consists of a 6 LiF wafer coupled to a diffused-junction charged particle detector. Alpha particles resulting from (n,α) interactions within the lithium wafer produce a pulsed signal corresponding to neutron intensity. Special detector circuitry causes the setting of a criticality bit recognizable by the microcomputer should neutron field intensities either exceed a hardware selectable frequency or saturate the detector resulting in a high current condition. These two modes of criticality sensing, in combination with the standard method of comparing an operator selectable alarm setpoint with the detector count rate, results in a criticality system capable of effective operation under the most demanding criticality monitoring conditions

Dynamical properties of three terminal magnetic tunnel junctions: Spintronics meets spin-orbitronics

Energy Technology Data Exchange (ETDEWEB)

Tomasello, R. [Department of Computer Science, Modeling, Electronics and System Science, University of Calabria, Rende (CS) (Italy); Carpentieri, M., E-mail: m.carpentieri@poliba.it [Department of Electrical and Information Engineering, Politecnico of Bari, via E. Orabona 4, I-70125 Bari (Italy); Finocchio, G. [Department of Electronic Engineering, Industrial Chemistry and Engineering, University of Messina, C.da di Dio, I-98166 Messina (Italy)

2013-12-16

This Letter introduces a micromagnetic model able to characterize the magnetization dynamics in three terminal magnetic tunnel junctions, where the effects of spin-transfer torque and spin-orbit torque are taken into account. Our results predict that the possibility to separate electrically those two torque sources is very promising from a technological point of view for both next generation of nanoscale spintronic oscillators and microwave detectors. A scalable synchronization scheme based on the parallel connection of those three terminal devices is also proposed.

Dynamical properties of three terminal magnetic tunnel junctions: Spintronics meets spin-orbitronics

International Nuclear Information System (INIS)

Tomasello, R.; Carpentieri, M.; Finocchio, G.

2013-01-01

This Letter introduces a micromagnetic model able to characterize the magnetization dynamics in three terminal magnetic tunnel junctions, where the effects of spin-transfer torque and spin-orbit torque are taken into account. Our results predict that the possibility to separate electrically those two torque sources is very promising from a technological point of view for both next generation of nanoscale spintronic oscillators and microwave detectors. A scalable synchronization scheme based on the parallel connection of those three terminal devices is also proposed

Macroscopic quantum tunneling in Josephson tunnel junctions and Coulomb blockade in single small tunnel junctions

International Nuclear Information System (INIS)

Cleland, A.N.

1991-04-01

Experiments investigating the process of macroscopic quantum tunneling in a moderately-damped, resistively shunted, Josephson junction are described, followed by a discussion of experiments performed on very small capacitance normal-metal tunnel junctions. The experiments on the resistively-shunted Josephson junction were designed to investigate a quantum process, that of the tunneling of the Josephson phase variable under a potential barrier, in a system in which dissipation plays a major role in the dynamics of motion. All the parameters of the junction were measured using the classical phenomena of thermal activation and resonant activation. Theoretical predictions are compared with the experimental results, showing good agreement with no adjustable parameters; the tunneling rate in the moderately damped (Q ∼ 1) junction is seen to be reduced by a factor of 300 from that predicted for an undamped junction. The phase is seen to be a good quantum-mechanical variable. The experiments on small capacitance tunnel junctions extend the measurements on the larger-area Josephson junctions from the region in which the phase variable has a fairly well-defined value, i.e. its wavefunction has a narrow width, to the region where its value is almost completely unknown. The charge on the junction becomes well-defined and is predicted to quantize the current through the junction, giving rise to the Coulomb blockade at low bias. I present the first clear observation of the Coulomb blockade in single junctions. The electrical environment of the tunnel junction, however, strongly affects the behavior of the junction: higher resistance leads are observed to greatly sharpen the Coulomb blockade over that seen with lower resistance leads. I present theoretical descriptions of how the environment influences the junctions; comparisons with the experimental results are in reasonable agreement

Study of the use of a Phoswich detector for aerial radiometric surveys

International Nuclear Information System (INIS)

Schneid, E.J.; Lagin, L.J.

1981-09-01

Large volume, actively shielded Phoswich detector configurations were investigated for application in airborne radiometric survey systems in order to increase the sensitivity to ground-level potassium, uranium, and thorium compared to conventional NaI detectors of similar sizes. One Phoswich configuration was fabricated and flight tested. The flight measurements with the Phoswich detector and a conventional NaI detector utilized the Bendix Field Engineering Corporation - US Department of Energy/Grand Junction Office Walker Field Aerial Radiometric Survey Calibration Facility, the DOE dynamic test range, and a region in the southwest portion of the Lubbock, Texas, Quadrangle. The tests demonstrated that the Phoswich detector can function in an operational environment and does provide greater sensitivity to ground-level potassium, uranium, and thorium concentration than the conventional NaI detector. The multicrystal configuration for the Phoswich detector provided the capability to simultaneously measure the atmospheric radon background without the need of heavy lead shields. The flight tests indicated that the Phoswich detector has directional discrimination capability not available with conventional NaI detector systems. This directional capability can be used to distinguish the location, relative to the aircraft, of localized strong sources of radiation

Heat transport and electron cooling in ballistic normal-metal/spin-filter/superconductor junctions

International Nuclear Information System (INIS)

Kawabata, Shiro; Vasenko, Andrey S.; Ozaeta, Asier; Bergeret, Sebastian F.; Hekking, Frank W.J.

2015-01-01

We investigate electron cooling based on a clean normal-metal/spin-filter/superconductor junction. Due to the suppression of the Andreev reflection by the spin-filter effect, the cooling power of the system is found to be extremely higher than that for conventional normal-metal/nonmagnetic-insulator/superconductor coolers. Therefore we can extract large amount of heat from normal metals. Our results strongly indicate the practical usefulness of the spin-filter effect for cooling detectors, sensors, and quantum bits

Heat transport and electron cooling in ballistic normal-metal/spin-filter/superconductor junctions

Energy Technology Data Exchange (ETDEWEB)

Kawabata, Shiro, E-mail: s-kawabata@aist.go.jp [Electronics and Photonics Research Institute (ESPRIT), National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568 (Japan); Vasenko, Andrey S. [LPMMC, Université Joseph Fourier and CNRS, 25 Avenue des Martyrs, BP 166, 38042 Grenoble (France); Ozaeta, Asier [Centro de Física de Materiales (CFM-MPC), Centro Mixto CSIC-UPV/EHU, Manuel de Lardizabal 5, E-20018 San Sebastián (Spain); Bergeret, Sebastian F. [Centro de Física de Materiales (CFM-MPC), Centro Mixto CSIC-UPV/EHU, Manuel de Lardizabal 5, E-20018 San Sebastián (Spain); Donostia International Physics Center (DIPC), Manuel de Lardizabal 5, E-20018 San Sebastián (Spain); Hekking, Frank W.J. [LPMMC, Université Joseph Fourier and CNRS, 25 Avenue des Martyrs, BP 166, 38042 Grenoble (France)

2015-06-01

We investigate electron cooling based on a clean normal-metal/spin-filter/superconductor junction. Due to the suppression of the Andreev reflection by the spin-filter effect, the cooling power of the system is found to be extremely higher than that for conventional normal-metal/nonmagnetic-insulator/superconductor coolers. Therefore we can extract large amount of heat from normal metals. Our results strongly indicate the practical usefulness of the spin-filter effect for cooling detectors, sensors, and quantum bits.

Josephson junction arrays

International Nuclear Information System (INIS)

Bindslev Hansen, J.; Lindelof, P.E.

1985-01-01

In this review we intend to cover recent work involving arrays of Josephson junctions. The work on such arrays falls naturally into three main areas of interest: 1. Technical applications of Josephson junction arrays for high-frequency devices. 2. Experimental studies of 2-D model systems (Kosterlitz-Thouless phase transition, commensurate-incommensurate transition in frustrated (flux) lattices). 3. Investigations of phenomena associated with non-equilibrium superconductivity in and around Josephson junctions (with high current density). (orig./BUD)

Proceedings of the workshop on radiation detector and its application

International Nuclear Information System (INIS)

1996-01-01

This workshop was held from January 23 to 25, 1996 at National Laboratory for High Energy Physics. At the workshop, lectures were given on the development of the single ion detector using MCP in heavy ion microbeam device, the response of MCP to single heavy ion, the response of a superheated liquid drop type detector to low LET radiation, the response characteristics of a CR-39 flight track detector to hydrogen isotopes, the analysis of small nuclear flight tracks on CR-39 with an interatomic force microscope, charge-sensible amplifiers, the signal-processing circuit for position detection, time and depth-resolved measurement of ion tracks in condensed matter, the response of a thin Si detector to electrons, the method of expressing gas-amplifying rate curves in proportional count gas for low temperature, the characteristics of self annihilating streamer by ultraviolet laser, the development of slow positron beam using radioisotopes, the development of a tunnel junction type x-ray detector, the development of the pattern-analyzing system for PIXE spectra, the characteristics of NE213-CaF 2 bond type neutron detector and many others. In this report, the gists of these papers are collected. (K.I.)

Electronic thermometry in tunable tunnel junction

Science.gov (United States)

Maksymovych, Petro

2016-03-15

A tunable tunnel junction thermometry circuit includes a variable width tunnel junction between a test object and a probe. The junction width is varied and a change in thermovoltage across the junction with respect to the change in distance across the junction is determined. Also, a change in biased current with respect to a change in distance across the junction is determined. A temperature gradient across the junction is determined based on a mathematical relationship between the temperature gradient, the change in thermovoltage with respect to distance and the change in biased current with respect to distance. Thermovoltage may be measured by nullifying a thermoelectric tunneling current with an applied voltage supply level. A piezoelectric actuator may modulate the probe, and thus the junction width, to vary thermovoltage and biased current across the junction. Lock-in amplifiers measure the derivatives of the thermovoltage and biased current modulated by varying junction width.

Dynamics of Josephson junction arrays

International Nuclear Information System (INIS)

Hadley, P.

1989-01-01

The dynamics of Josephson junction arrays is a topic that lies at the intersection of the fields of nonlinear dynamics and Josephson junction technology. The series arrays considered here consist of several rapidly oscillating Josephson junctions where each junction is coupled equally to every other junction. The purpose of this study is to understand phaselocking and other cooperative dynamics of this system. Previously, little was known about high dimensional nonlinear systems of this sort. Numerical simulations are used to study the dynamics of these arrays. Three distinct types of periodic solutions to the array equations were observed as well as period doubled and chaotic solutions. One of the periodic solutions is the symmetric, in-phase solution where all of the junctions oscillate identically. The other two periodic solutions are symmetry-broken solutions where all of the junction do not oscillate identically. The symmetry-broken solutions are highly degenerate. As many as (N - 1) stable solutions can coexist for an array of N junctions. Understanding the stability of these several solutions and the transitions among them is vital to the design of useful devices

Methods of manufacturing a detector device

International Nuclear Information System (INIS)

Wotherspoon, J.T.M.

1982-01-01

In the manufacture of an infra-red radiation detector device, a body of rho-type cadmium mercury telluride is bombarded with ions to etch away a part of the body and to produce from the etched-away part of the body an excess concentration of mercury which acts as a dopant source converting an adjacent part of the body into n-type material. The energy of the bombarding ions is less than 30 keV, and by appropriately choosing the ion dose this conversion can be effected over a depth considerably greater than the penetration depth of the ions. A p-n junction can be fabricated in this way for a photovoltaic detector. The conductivity type conversion may even be effected through the body thickness. The etching and conversion can be localised by masking part of the body surface against the ion bombardment. (author)

Doped Josephson tunneling junction for use in a sensitive IR detector

International Nuclear Information System (INIS)

Fletcher, J.C.; Saffren, M.M.

1975-01-01

A superconductive tunneling device having a modified tunnel barrier capable of supporting Josephson tunneling current is provided. The tunnel barrier located between a pair of electrodes includes a molecular species which is capable of coupling incident radiation of a spectrum characteristic of the molecular species into the tunnel barrier. The coupled radiation modulates the known Josephson characteristics of the superconducting device. As a result of the present invention, a superconductive tunneling device can be tuned or made sensitive to a particular radiation associated with the dopant molecular species. The present invention is particularly useful in providing an improved infrared detector. The tunnel barrier region can be, for example, an oxide of an electrode or frozen gas. The molecular species can be intermixed with the barrier region such as the frozen gas or deposited as one or more layers of molecules on the barrier region. The deposited molecules of the molecular species are unbonded and capable of responding to a radiation characteristic of the molecules. Semi-conductor material can be utilized as the molecular species to provide an increased selective bandwidth response. Finally, appropriate detector equipment can be utilized to measure the modulation of any of the Josephson characteristics such as critical current, voltage steps, Lambe-Jaklevic peaks and plasma frequency. (auth)

Tight junctions and human diseases.

Science.gov (United States)

Sawada, Norimasa; Murata, Masaki; Kikuchi, Keisuke; Osanai, Makoto; Tobioka, Hirotoshi; Kojima, Takashi; Chiba, Hideki

2003-09-01

Tight junctions are intercellular junctions adjacent to the apical end of the lateral membrane surface. They have two functions, the barrier (or gate) function and the fence function. The barrier function of tight junctions regulates the passage of ions, water, and various macromolecules, even of cancer cells, through paracellular spaces. The barrier function is thus relevant to edema, jaundice, diarrhea, and blood-borne metastasis. On the other hand, the fence function maintains cell polarity. In other words, tight junctions work as a fence to prevent intermixing of molecules in the apical membrane with those in the lateral membrane. This function is deeply involved in cancer cell biology, in terms of loss of cell polarity. Of the proteins comprising tight junctions, integral membrane proteins occludin, claudins, and JAMs have been recently discovered. Of these molecules, claudins are exclusively responsible for the formation of tight-junction strands and are connected with the actin cytoskeleton mediated by ZO-1. Thus, both functions of tight junctions are dependent on the integrity of the actin cytoskeleton as well as ATP. Mutations in the claudin14 and the claudin16 genes result in hereditary deafness and hereditary hypomagnesemia, respectively. Some pathogenic bacteria and viruses target and affect the tight-junction function, leading to diseases. In this review, the relationship between tight junctions and human diseases is summarized.

Technology of silicon charged-particle detectors developed at the Institute of Electron Technology (ITE)

Science.gov (United States)

Wegrzecka, Iwona; Panas, Andrzej; Bar, Jan; Budzyński, Tadeusz; Grabiec, Piotr; Kozłowski, Roman; Sarnecki, Jerzy; Słysz, Wojciech; Szmigiel, Dariusz; Wegrzecki, Maciej; Zaborowski, Michał

2013-07-01

The paper discusses the technology of silicon charged-particle detectors developed at the Institute of Electron Technology (ITE). The developed technology enables the fabrication of both planar and epiplanar p+-ν-n+ detector structures with an active area of up to 50 cm2. The starting material for epiplanar structures are silicon wafers with a high-resistivity n-type epitaxial layer ( ν layer - ρ < 3 kΩcm) deposited on a highly doped n+-type substrate (ρ< 0,02Ωcm) developed and fabricated at the Institute of Electronic Materials Technology. Active layer thickness of the epiplanar detectors (νlayer) may range from 10 μm to 150 μm. Imported silicon with min. 5 kΩcm resistivity is used to fabricate planar detectors. Active layer thickness of the planar detectors (ν) layer) may range from 200 μm to 1 mm. This technology enables the fabrication of both discrete and multi-junction detectors (monolithic detector arrays), such as single-sided strip detectors (epiplanar and planar) and double-sided strip detectors (planar). Examples of process diagrams for fabrication of the epiplanar and planar detectors are presented in the paper, and selected technological processes are discussed.

A single-gradient junction technique to replace multiple-junction shifts for craniospinal irradiation treatment

International Nuclear Information System (INIS)

Hadley, Austin; Ding, George X.

2014-01-01

Craniospinal irradiation (CSI) requires abutting fields at the cervical spine. Junction shifts are conventionally used to prevent setup error–induced overdosage/underdosage from occurring at the same location. This study compared the dosimetric differences at the cranial-spinal junction between a single-gradient junction technique and conventional multiple-junction shifts and evaluated the effect of setup errors on the dose distributions between both techniques for a treatment course and single fraction. Conventionally, 2 lateral brain fields and a posterior spine field(s) are used for CSI with weekly 1-cm junction shifts. We retrospectively replanned 4 CSI patients using a single-gradient junction between the lateral brain fields and the posterior spine field. The fields were extended to allow a minimum 3-cm field overlap. The dose gradient at the junction was achieved using dose painting and intensity-modulated radiation therapy planning. The effect of positioning setup errors on the dose distributions for both techniques was simulated by applying shifts of ± 3 and 5 mm. The resulting cervical spine doses across the field junction for both techniques were calculated and compared. Dose profiles were obtained for both a single fraction and entire treatment course to include the effects of the conventional weekly junction shifts. Compared with the conventional technique, the gradient-dose technique resulted in higher dose uniformity and conformity to the target volumes, lower organ at risk (OAR) mean and maximum doses, and diminished hot spots from systematic positioning errors over the course of treatment. Single-fraction hot and cold spots were improved for the gradient-dose technique. The single-gradient junction technique provides improved conformity, dose uniformity, diminished hot spots, lower OAR mean and maximum dose, and one plan for the entire treatment course, which reduces the potential human error associated with conventional 4-shifted plans

Silicon drift detectors with on-chip electronics for x-ray spectroscopy.

Science.gov (United States)

Fiorini, C; Longoni, A; Hartmann, R; Lechner, P; Strüder, L

1997-01-01

The silicon drift detector (SDD) is a semiconductor device based on high resistivity silicon fully depleted through junctions implanted on both sides of the semiconductor wafer. The electrons generated by the ionizing radiation are driven by means of a suitable electric field from the point of interaction toward a collecting anode of small capacitance, independent of the active area of the detector. A suitably designed front-end JFET has been directly integrated on the detector chip close to the anode region, in order to obtain a nearly ideal capacitive matching between detector and transistor and to minimize the stray capacitances of the connections. This feature allows it to reach high energy resolution also at high count rates and near room temperature. The present work describes the structure and the performance of SDDs specially designed for high resolution spectroscopy with soft x rays at high detection rate. Experimental results of SDDs used in spectroscopy applications are also reported.

Predictable quantum efficient detector based on n-type silicon photodiodes

Science.gov (United States)

Dönsberg, Timo; Manoocheri, Farshid; Sildoja, Meelis; Juntunen, Mikko; Savin, Hele; Tuovinen, Esa; Ronkainen, Hannu; Prunnila, Mika; Merimaa, Mikko; Tang, Chi Kwong; Gran, Jarle; Müller, Ingmar; Werner, Lutz; Rougié, Bernard; Pons, Alicia; Smîd, Marek; Gál, Péter; Lolli, Lapo; Brida, Giorgio; Rastello, Maria Luisa; Ikonen, Erkki

2017-12-01

The predictable quantum efficient detector (PQED) consists of two custom-made induced junction photodiodes that are mounted in a wedged trap configuration for the reduction of reflectance losses. Until now, all manufactured PQED photodiodes have been based on a structure where a SiO2 layer is thermally grown on top of p-type silicon substrate. In this paper, we present the design, manufacturing, modelling and characterization of a new type of PQED, where the photodiodes have an Al2O3 layer on top of n-type silicon substrate. Atomic layer deposition is used to deposit the layer to the desired thickness. Two sets of photodiodes with varying oxide thicknesses and substrate doping concentrations were fabricated. In order to predict recombination losses of charge carriers, a 3D model of the photodiode was built into Cogenda Genius semiconductor simulation software. It is important to note that a novel experimental method was developed to obtain values for the 3D model parameters. This makes the prediction of the PQED responsivity a completely autonomous process. Detectors were characterized for temperature dependence of dark current, spatial uniformity of responsivity, reflectance, linearity and absolute responsivity at the wavelengths of 488 nm and 532 nm. For both sets of photodiodes, the modelled and measured responsivities were generally in agreement within the measurement and modelling uncertainties of around 100 parts per million (ppm). There is, however, an indication that the modelled internal quantum deficiency may be underestimated by a similar amount. Moreover, the responsivities of the detectors were spatially uniform within 30 ppm peak-to-peak variation. The results obtained in this research indicate that the n-type induced junction photodiode is a very promising alternative to the existing p-type detectors, and thus give additional credibility to the concept of modelled quantum detector serving as a primary standard. Furthermore, the manufacturing of

Macroscopic quantum tunneling in Josephson tunnel junctions and Coulomb blockade in single small tunnel junctions

International Nuclear Information System (INIS)

Cleland, A.N.

1991-01-01

Experiments investigated the process of macroscopic quantum tunneling in a moderately-damped, resistively shunted, Josephson junction are described, followed by a discussion of experiments performed on very-small-capacitance normal-metal tunnel junctions. The experiments on the resistively-shunted Josephson junction were designed to investigate a quantum process, that of the tunneling of the Josephson-phase variable under a potential barrier, in a system in which dissipation plays a major role in the dynamics of motion. All the parameters of the junction were measured using the classical phenomena of thermal activation and resonant activation. Theoretical predictions are compared with the experimental results, showing good agreement with no adjustable parameters. The experiments on small-capacitance tunnel junctions extend the measurements on the large-area Josephson junctions from the region in which the phase variable has a fairly well-defined value, i.e. its wave function has a narrow width, to the region where its value is almost completely unknown. The charge on the junction becomes well-defined and is predicted to quantize the current through the junction, giving rise to the Coulomb blockade at low bias

Increasing gap junctional coupling: a tool for dissecting the role of gap junctions

DEFF Research Database (Denmark)

Axelsen, Lene Nygaard; Haugan, Ketil; Stahlhut, Martin

2007-01-01

Much of our current knowledge about the physiological and pathophysiological role of gap junctions is based on experiments where coupling has been reduced by either chemical agents or genetic modification. This has brought evidence that gap junctions are important in many physiological processes....... In a number of cases, gap junctions have been implicated in the initiation and progress of disease, and experimental uncoupling has been used to investigate the exact role of coupling. The inverse approach, i.e., to increase coupling, has become possible in recent years and represents a new way of testing...... the role of gap junctions. The aim of this review is to summarize the current knowledge obtained with agents that selectively increase gap junctional intercellular coupling. Two approaches will be reviewed: increasing coupling by the use of antiarrhythmic peptide and its synthetic analogs...

Junction detection and pathway selection

Science.gov (United States)

Peck, Alex N.; Lim, Willie Y.; Breul, Harry T.

1992-02-01

The ability to detect junctions and make choices among the possible pathways is important for autonomous navigation. In our script-based navigation approach where a journey is specified as a script of high-level instructions, actions are frequently referenced to junctions, e.g., `turn left at the intersection.' In order for the robot to carry out these kind of instructions, it must be able (1) to detect an intersection (i.e., an intersection of pathways), (2) know that there are several possible pathways it can take, and (3) pick the pathway consistent with the high level instruction. In this paper we describe our implementation of the ability to detect junctions in an indoor environment, such as corners, T-junctions and intersections, using sonar. Our approach uses a combination of partial scan of the local environment and recognition of sonar signatures of certain features of the junctions. In the case where the environment is known, we use additional sensor information (such as compass bearings) to help recognize the specific junction. In general, once a junction is detected and its type known, the number of possible pathways can be deduced and the correct pathway selected. Then the appropriate behavior for negotiating the junction is activated.

Supramolecular tunneling junctions

NARCIS (Netherlands)

Wimbush, K.S.

2012-01-01

In this study a variety of supramolecular tunneling junctions were created. The basis of these junctions was a self-assembled monolayer of heptathioether functionalized ß-cyclodextrin (ßCD) formed on an ultra-flat Au surface, i.e., the bottom electrode. This gave a well-defined hexagonally packed

Phase diagrams of particles with dissimilar patches: X-junctions and Y-junctions

International Nuclear Information System (INIS)

Tavares, J M; Teixeira, P I C

2012-01-01

We use Wertheim’s first-order perturbation theory to investigate the phase behaviour and the structure of coexisting fluid phases for a model of patchy particles with dissimilar patches (two patches of type A and f B patches of type B). A patch of type α = {A,B} can bond to a patch of type β = {A,B} in a volume v αβ , thereby decreasing the internal energy by ε αβ . We analyse the range of model parameters where AB bonds, or Y-junctions, are energetically disfavoured (ε AB AA /2) but entropically favoured (v AB ≫ v αα ), and BB bonds, or X-junctions, are energetically favoured (ε BB > 0). We show that, for low values of ε BB /ε AA , the phase diagram has three different regions: (i) close to the critical temperature a low-density liquid composed of long chains and rich in Y-junctions coexists with a vapour of chains; (ii) at intermediate temperatures there is coexistence between a vapour of short chains and a liquid of very long chains with X- and Y-junctions; (iii) at low temperatures an ideal gas coexists with a high-density liquid with all possible AA and BB bonds formed. It is also shown that in region (i) the liquid binodal is reentrant (its density decreases with decreasing temperature) for the lower values of ε BB /ε AA . The existence of these three regions is a consequence of the competition between the formation of X- and Y-junctions: X-junctions are energetically favoured and thus dominate at low temperatures, whereas Y-junctions are entropically favoured and dominate at higher temperatures. (paper)

Common features of a vortex structure in long exponentially shaped Josephson junctions and Josephson junctions with inhomogeneities

International Nuclear Information System (INIS)

Boyadjiev, T.L.; Semerdjieva, E.G.; Shukrinov, Yu.M.

2007-01-01

We study the vortex structure in three different models of the long Josephson junction: the exponentially shaped Josephson junction and the Josephson junctions with the resistor and the shunt inhomogeneities in the barrier layer. For these three models the critical curves 'critical current-magnetic field' are numerically constructed. We develop the idea of the equivalence of the exponentially shaped Josephson junction and the rectangular junction with the distributed inhomogeneity and demonstrate that at some parameters of the shunt and the resistor inhomogeneities in the ends of the junction the corresponding critical curves are very close to the exponentially shaped one

DUMAND-II (Deep Underwater Muon and Neutrino Detector) PROGRESS Report

OpenAIRE

Young, Kenneth K.

1994-01-01

The DUMAND-II detector will search for astronomical sources of high energy neutrinos. Successful deployment of the basic infrastructure, including the shore cable, the underwater junction box, and an environmental module was accomplished in December, 1993. One optical module string was also deployed and operated, logging data for about 10 hours. The underwater cable was connected to the shore station where we were able to successfully exercise system controls and log further environmental dat...

Test of the TRAPPISTe monolithic detector system

Science.gov (United States)

Soung Yee, L.; Álvarez, P.; Martin, E.; Cortina, E.; Ferrer, C.

2013-12-01

A monolithic pixel detector named TRAPPISTe-2 has been developed in Silicon-on-Insulator (SOI) technology. A p-n junction is implanted in the bottom handle wafer and connected to readout electronics integrated in the top active layer. The two parts are insulated from each other by a buried oxide layer resulting in a monolithic detector. Two small pixel matrices have been fabricated: one containing a 3-transistor readout and a second containing a charge sensitive amplifier readout. These two readout structures have been characterized and the pixel matrices were tested with an infrared laser source. The readout circuits are adversely affected by the backgate effect, which limits the voltage that can be applied to the metal back plane to deplete the sensor, thus narrowing the depletion width of the sensor. Despite the low depletion voltages, the integrated pixel matrices were able to respond to and track a laser source.

Behavior of tight-junction, adherens-junction and cell polarity proteins during HNF-4α-induced epithelial polarization

International Nuclear Information System (INIS)

Satohisa, Seiro; Chiba, Hideki; Osanai, Makoto; Ohno, Shigeo; Kojima, Takashi; Saito, Tsuyoshi; Sawada, Norimasa

2005-01-01

We previously reported that expression of tight-junction molecules occludin, claudin-6 and claudin-7, as well as establishment of epithelial polarity, was triggered in mouse F9 cells expressing hepatocyte nuclear factor (HNF)-4α [H. Chiba, T. Gotoh, T. Kojima, S. Satohisa, K. Kikuchi, M. Osanai, N. Sawada. Hepatocyte nuclear factor (HNF)-4α triggers formation of functional tight junctions and establishment of polarized epithelial morphology in F9 embryonal carcinoma cells, Exp. Cell Res. 286 (2003) 288-297]. Using these cells, we examined in the present study behavior of tight-junction, adherens-junction and cell polarity proteins and elucidated the molecular mechanism behind HNF-4α-initiated junction formation and epithelial polarization. We herein show that not only ZO-1 and ZO-2, but also ZO-3, junctional adhesion molecule (JAM)-B, JAM-C and cell polarity proteins PAR-3, PAR-6 and atypical protein kinase C (aPKC) accumulate at primordial adherens junctions in undifferentiated F9 cells. In contrast, CRB3, Pals1 and PATJ appeared to exhibit distinct subcellular localization in immature cells. Induced expression of HNF-4α led to translocation of these tight-junction and cell polarity proteins to beltlike tight junctions, where occludin, claudin-6 and claudin-7 were assembled, in differentiated cells. Interestingly, PAR-6, aPKC, CRB3 and Pals1, but not PAR-3 or PATJ, were also concentrated on the apical membranes in differentiated cells. These findings indicate that HNF-4α provokes not only expression of tight-junction adhesion molecules, but also modulation of subcellular distribution of junction and cell polarity proteins, resulting in junction formation and epithelial polarization

Flexible 2D layered material junctions

Science.gov (United States)

Balabai, R.; Solomenko, A.

2018-03-01

Within the framework of the methods of the electron density functional and the ab initio pseudopotential, we have obtained the valence electron density spatial distribution, the densities of electron states, the widths of band gaps, the charges on combined regions, and the Coulomb potentials for graphene-based flexible 2D layered junctions, using author program complex. It is determined that the bending of the 2D layered junctions on the angle α leads to changes in the electronic properties of these junctions. In the graphene/graphane junction, there is clear charge redistribution with different signs in the regions of junctions. The presence in the heterojunctions of charge regions with different signs leads to the formation of potential barriers. The greatest potential jump is in the graphene/fluorographene junction. The greatest value of the band gap width is in the graphene/graphane junction.

A Needle-Type p-i-n Junction Semiconductor Detector for In-Vivo Measurement of Beta Tracer Activity

Energy Technology Data Exchange (ETDEWEB)

Lauber, A; Rosencrantz, B

1964-10-15

A miniature detector probe has been developed for in-vivo detection of beta tracer activity. A lithium-drifted p-i-n detector shaped as a cylinder 0.9 mm in diameter and 3 mm long acts as the sensing element. The detector is encased in a stainless steel tube 50 mm long, fastened to a holder fitted with a miniature coaxial contact. The free end of the tube has a syringe-like, entirely tight tip. The steel tube has an outer diameter of 1.4 mm except for 10 mm at the free end where the outer diameter is 1.1 mm corresponding to a wall thickness of 005 mm. The detector is placed in the 1.1 mm part of the tube. The construction and the properties of the probe are described.

A Needle-Type p-i-n Junction Semiconductor Detector for In-Vivo Measurement of Beta Tracer Activity

International Nuclear Information System (INIS)

Lauber, A.; Rosencrantz, B.

1964-10-01

A miniature detector probe has been developed for in-vivo detection of beta tracer activity. A lithium-drifted p-i-n detector shaped as a cylinder 0.9 mm in diameter and 3 mm long acts as the sensing element. The detector is encased in a stainless steel tube 50 mm long, fastened to a holder fitted with a miniature coaxial contact. The free end of the tube has a syringe-like, entirely tight tip. The steel tube has an outer diameter of 1.4 mm except for 10 mm at the free end where the outer diameter is 1.1 mm corresponding to a wall thickness of 005 mm. The detector is placed in the 1.1 mm part of the tube. The construction and the properties of the probe are described

The Dissolution of Double Holliday Junctions

DEFF Research Database (Denmark)

Bizard, Anna H; Hickson, Ian D

2014-01-01

as "double Holliday junction dissolution." This reaction requires the cooperative action of a so-called "dissolvasome" comprising a Holliday junction branch migration enzyme (Sgs1/BLM RecQ helicase) and a type IA topoisomerase (Top3/TopoIIIα) in complex with its OB (oligonucleotide/oligosaccharide binding......Double Holliday junctions (dHJS) are important intermediates of homologous recombination. The separate junctions can each be cleaved by DNA structure-selective endonucleases known as Holliday junction resolvases. Alternatively, double Holliday junctions can be processed by a reaction known......) fold containing accessory factor (Rmi1). This review details our current knowledge of the dissolution process and the players involved in catalyzing this mechanistically complex means of completing homologous recombination reactions....

Quantum Junction Solar Cells

KAUST Repository

Tang, Jiang

2012-09-12

Colloidal quantum dot solids combine convenient solution-processing with quantum size effect tuning, offering avenues to high-efficiency multijunction cells based on a single materials synthesis and processing platform. The highest-performing colloidal quantum dot rectifying devices reported to date have relied on a junction between a quantum-tuned absorber and a bulk material (e.g., TiO 2); however, quantum tuning of the absorber then requires complete redesign of the bulk acceptor, compromising the benefits of facile quantum tuning. Here we report rectifying junctions constructed entirely using inherently band-aligned quantum-tuned materials. Realizing these quantum junction diodes relied upon the creation of an n-type quantum dot solid having a clean bandgap. We combine stable, chemically compatible, high-performance n-type and p-type materials to create the first quantum junction solar cells. We present a family of photovoltaic devices having widely tuned bandgaps of 0.6-1.6 eV that excel where conventional quantum-to-bulk devices fail to perform. Devices having optimal single-junction bandgaps exhibit certified AM1.5 solar power conversion efficiencies of 5.4%. Control over doping in quantum solids, and the successful integration of these materials to form stable quantum junctions, offers a powerful new degree of freedom to colloidal quantum dot optoelectronics. © 2012 American Chemical Society.

Low Gain Avalanche Detectors (LGAD) for particle physics and synchrotron applications

Science.gov (United States)

Moffat, N.; Bates, R.; Bullough, M.; Flores, L.; Maneuski, D.; Simon, L.; Tartoni, N.; Doherty, F.; Ashby, J.

2018-03-01

A new avalanche silicon detector concept is introduced with a low gain in the region of ten, known as a Low Gain Avalanche Detector, LGAD. The detector's characteristics are simulated via a full process simulation to obtain the required doping profiles which demonstrate the desired operational characteristics of high breakdown voltage (500 V) and a gain of 10 at 200 V reverse bias for X-ray detection. The first low gain avalanche detectors fabricated by Micron Semiconductor Ltd are presented. The doping profiles of the multiplication junctions were measured with SIMS and reproduced by simulating the full fabrication process which enabled further development of the manufacturing process. The detectors are 300 μm thick p-type silicon with a resistivity of 8.5 kΩcm, which fully depletes at 116 V. The current characteristics are presented and demonstrate breakdown voltages in excess of 500 V and a current density of 40 to 100 nAcm‑2 before breakdown measured at 20oC. The gain of the LGAD has been measured with a red laser (660 nm) and shown to be between 9 and 12 for an external bias voltage range from 150 V to 300 V.

Molecular electronic junction transport

DEFF Research Database (Denmark)

Solomon, Gemma C.; Herrmann, Carmen; Ratner, Mark

2012-01-01

Whenasinglemolecule,oracollectionofmolecules,isplacedbetween two electrodes and voltage is applied, one has a molecular transport junction. We discuss such junctions, their properties, their description, and some of their applications. The discussion is qualitative rather than quantitative, and f...

Gap junctions and motor behavior

DEFF Research Database (Denmark)

Kiehn, Ole; Tresch, Matthew C.

2002-01-01

The production of any motor behavior requires coordinated activity in motor neurons and premotor networks. In vertebrates, this coordination is often assumed to take place through chemical synapses. Here we review recent data suggesting that electrical gap-junction coupling plays an important role...... in coordinating and generating motor outputs in embryonic and early postnatal life. Considering the recent demonstration of a prevalent expression of gap-junction proteins and gap-junction structures in the adult mammalian spinal cord, we suggest that neuronal gap-junction coupling might also contribute...... to the production of motor behavior in adult mammals....

Ferromagnetic Josephson Junctions for Cryogenic Memory

Science.gov (United States)

Niedzielski, Bethany M.; Gingrich, Eric C.; Khasawneh, Mazin A.; Loloee, Reza; Pratt, William P., Jr.; Birge, Norman O.

2015-03-01

Josephson junctions containing ferromagnetic materials are of interest for both scientific and technological purposes. In principle, either the amplitude of the critical current or superconducting phase shift across the junction can be controlled by the relative magnetization directions of the ferromagnetic layers in the junction. Our approach concentrates on phase control utilizing two junctions in a SQUID geometry. We will report on efforts to control the phase of junctions carrying either spin-singlet or spin-triplet supercurrent for cryogenic memory applications. Supported by Northorp Grumman Corporation and by IARPA under SPAWAR Contract N66001-12-C-2017.

Analysis and comparison of the breakdown performance of semi- insulator and dielectric passivated Si strip detectors

CERN Document Server

Ranjan, Kirti; Chatterji, S; Srivastava-Ajay, K; Shivpuri, R K

2002-01-01

The harsh radiation environment in future high-energy physics (HEP) experiments like LHC provides a challenging task to the performance of Si microstrip detectors. Normal operating condition for silicon detectors in HEP experiments are in most cases not as favourable as for experiments in nuclear physics. In HEP experiments the detector may be exposed to moisture and other adverse atmospheric environment. It is therefore utmost important to protect the sensitive surfaces against such poisonous effects. These instabilities can be nearly eliminated and the performance of Si detectors can be improved by implementing suitably passivated metal-overhang structures. This paper presents the influence of the relative permittivity of the passivant on the breakdown performance of the Si detectors using computer simulations. The semi-insulator and the dielectric passivated metal-overhang structures are compared under optimal conditions. The influence of various parameters such as passivation layer thickness, junction dep...

Device-quality tunnel junctions on the high Tc superconductor HgBa2CuO4+δ

International Nuclear Information System (INIS)

Zasadzinski, J.; Chen, J.; Romano, P.; Gray, K.E.; Wagner, J.L.; Hinks, D.G.

1995-01-01

SIN and SIS tunnel junction devices (e.g. photon detectors, logic elements) require quasiparticle characteristics that exhibit sharp current onsets at the gap voltage and very low sub-gap conductances. Progress is reported on the development of such junctions on High Tc cuprates using mechanical point contacts. In general, these contacts display the optimum characteristics that can be obtained from HTS native-surface tunnel barriers. Most cuprates display a sub-gap conductance which monotonically increases with voltage about the minimum value at zero bias. However, tunneling data of unusually high quality have been obtained for the recently discovered Hg-based cuprate, HgBa 2 CuO 4 (T c =96K). SIS' tunneling data using a Nb tip are presented which exhibit very low and flat sub-gap conductances and sharp conductance peaks as expected from a BCS density of states. These results are slightly improved over earlier published results with SIN junctions. Use of the experimental data to simulate the performance of a quasiparticle mixer demonstrates that noise temperatures approaching the quantum limit are possible for SIS and SIN mixers in the range 1-5 THz

Atomic-scaled characterization of graphene PN junctions

Science.gov (United States)

Zhou, Xiaodong; Wang, Dennis; Dadgar, Ali; Agnihotri, Pratik; Lee, Ji Ung; Reuter, Mark C.; Ross, Frances M.; Pasupathy, Abhay N.

Graphene p-n junctions are essential devices for studying relativistic Klein tunneling and the Veselago lensing effect in graphene. We have successfully fabricated graphene p-n junctions using both lithographically pre-patterned substrates and the stacking of vertical heterostructures. We then use our 4-probe STM system to characterize the junctions. The ability to carry out scanning electron microscopy (SEM) in our STM instrument is essential for us to locate and measure the junction interface. We obtain both the topography and dI/dV spectra at the junction area, from which we track the shift of the graphene chemical potential with position across the junction interface. This allows us to directly measure the spatial width and roughness of the junction and its potential barrier height. We will compare the junction properties of devices fabricated by the aforementioned two methods and discuss their effects on the performance as a Veselago lens.

Stability of large-area molecular junctions

NARCIS (Netherlands)

Akkerman, Hylke B.; Kronemeijer, Auke J.; Harkema, Jan; van Hal, Paul A.; Smits, Edsger C. P.; de Leeuw, Dago M.; Blom, Paul W. M.

The stability of molecular junctions is crucial for any application of molecular electronics. Degradation of molecular junctions when exposed to ambient conditions is regularly observed. In this report the stability of large-area molecular junctions under ambient conditions for more than two years

Superconducting flux qubits with π-junctions

International Nuclear Information System (INIS)

Shcherbakova, Anastasia

2014-01-01

In this thesis, we present a fabrication technology of Al/AlO x /Al Josephson junctions on Nb pads. The described technology gives the possibility of combining a variety of Nb-based superconducting circuits, like pi-junction phase-shifters with sub-micron Al/AlO x /Al junctions. Using this approach, we fabricated hybrid Nb/Al flux qubits with and without the SFS-junctions and studied dispersive magnetic field response of these qubits as well as their spectroscopy characteristics.

Resonance Transport of Graphene Nanoribbon T-Shaped Junctions

International Nuclear Information System (INIS)

Xiao-Lan, Kong; Yong-Jian, Xiong

2010-01-01

We investigate the transport properties of T-shaped junctions composed of armchair graphene nanoribbons of different widths. Three types of junction geometries are considered. The junction conductance strongly depends on the atomic features of the junction geometry. When the shoulders of the junction have zigzag type edges, sharp conductance resonances usually appear in the low energy region around the Dirac point, and a conductance gap emerges. When the shoulders of the junction have armchair type edges, the conductance resonance behavior is weakened significantly, and the metal-metal-metal junction structures show semimetallic behaviors. The contact resistance also changes notably due to the various interface geometries of the junction

Josephson junctions with ferromagnetic interlayer

International Nuclear Information System (INIS)

Wild, Georg Hermann

2012-01-01

We report on the fabrication of superconductor/insulator/ferromagnetic metal/superconductor (Nb/AlO x /Pd 0.82 Ni 0.18 /Nb) Josephson junctions (SIFS JJs) with high critical current densities, large normal resistance times area products, and high quality factors. For these junctions, a transition from 0- to π-coupling is observed for a thickness d F =6 nm of the ferromagnetic Pd 0.82 Ni 0.18 interlayer. The magnetic field dependence of the critical current of the junctions demonstrates good spatial homogeneity of the tunneling barrier and ferromagnetic interlayer. Magnetic characterization shows that the Pd 0.82 Ni 0.18 has an out-of-plane anisotropy and large saturation magnetization indicating negligible dead layers at the interfaces. A careful analysis of Fiske modes up to about 400 GHz provides valuable information on the junction quality factor and the relevant damping mechanisms. Whereas losses due to quasiparticle tunneling dominate at low frequencies, at high frequencies the damping is explained by the finite surface resistance of the junction electrodes. High quality factors of up to 30 around 200 GHz have been achieved. They allow to study the junction dynamics, in particular the switching probability from the zero-voltage into the voltage state with and without microwave irradiation. The experiments with microwave irradiation are well explained within semi-classical models and numerical simulations. In contrast, at mK temperature the switching dynamics without applied microwaves clearly shows secondary quantum effects. Here, we could observe for the first time macroscopic quantum tunneling in Josephson junctions with a ferromagnetic interlayer. This observation excludes fluctuations of the critical current as a consequence of an unstable magnetic domain structure of the ferromagnetic interlayer and affirms the suitability of SIFS Josephson junctions for quantum information processing.

Josephson junctions with ferromagnetic interlayer

Energy Technology Data Exchange (ETDEWEB)

Wild, Georg Hermann

2012-03-04

We report on the fabrication of superconductor/insulator/ferromagnetic metal/superconductor (Nb/AlO{sub x}/Pd{sub 0.82}Ni{sub 0.18}/Nb) Josephson junctions (SIFS JJs) with high critical current densities, large normal resistance times area products, and high quality factors. For these junctions, a transition from 0- to {pi}-coupling is observed for a thickness d{sub F}=6 nm of the ferromagnetic Pd{sub 0.82}Ni{sub 0.18} interlayer. The magnetic field dependence of the critical current of the junctions demonstrates good spatial homogeneity of the tunneling barrier and ferromagnetic interlayer. Magnetic characterization shows that the Pd{sub 0.82}Ni{sub 0.18} has an out-of-plane anisotropy and large saturation magnetization indicating negligible dead layers at the interfaces. A careful analysis of Fiske modes up to about 400 GHz provides valuable information on the junction quality factor and the relevant damping mechanisms. Whereas losses due to quasiparticle tunneling dominate at low frequencies, at high frequencies the damping is explained by the finite surface resistance of the junction electrodes. High quality factors of up to 30 around 200 GHz have been achieved. They allow to study the junction dynamics, in particular the switching probability from the zero-voltage into the voltage state with and without microwave irradiation. The experiments with microwave irradiation are well explained within semi-classical models and numerical simulations. In contrast, at mK temperature the switching dynamics without applied microwaves clearly shows secondary quantum effects. Here, we could observe for the first time macroscopic quantum tunneling in Josephson junctions with a ferromagnetic interlayer. This observation excludes fluctuations of the critical current as a consequence of an unstable magnetic domain structure of the ferromagnetic interlayer and affirms the suitability of SIFS Josephson junctions for quantum information processing.

TOSCA simulation of some effects observed in irradiated silicon detectors

International Nuclear Information System (INIS)

Moszczynski, A.S.

2001-12-01

TOSCA package has been used to simulate some effects observed recently in heavily irradiated silicon detectors. In particular, unexpected possibility of α-particle registration at p+ contact has been explained without presented elsewhere assumption that there was p-n junction of unknown origin beneath p+ layer. Performed simulations showed that assumption on relaxation-like character of irradiated silicon material is also not necessary to explain such effects like low-voltage capacitance peak in reverse bias and negative capacitance in forward bias. (author)

Electron optics with ballistic graphene junctions

Science.gov (United States)

Chen, Shaowen

Electrons transmitted across a ballistic semiconductor junction undergo refraction, analogous to light rays across an optical boundary. A pn junction theoretically provides the equivalent of a negative index medium, enabling novel electron optics such as negative refraction and perfect (Veselago) lensing. In graphene, the linear dispersion and zero-gap bandstructure admit highly transparent pn junctions by simple electrostatic gating, which cannot be achieved in conventional semiconductors. Robust demonstration of these effects, however, has not been forthcoming. Here we employ transverse magnetic focusing to probe propagation across an electrostatically defined graphene junction. We find perfect agreement with the predicted Snell's law for electrons, including observation of both positive and negative refraction. Resonant transmission across the pn junction provides a direct measurement of the angle dependent transmission coefficient, and we demonstrate good agreement with theory. Comparing experimental data with simulation reveals the crucial role played by the effective junction width, providing guidance for future device design. Efforts toward sharper pn junction and possibility of zero field Veselago lensing will also be discussed. This work is supported by the Semiconductor Research Corporations NRI Center for Institute for Nanoelectronics Discovery and Exploration (INDEX).

Peltier cooling in molecular junctions

Science.gov (United States)

Cui, Longji; Miao, Ruijiao; Wang, Kun; Thompson, Dakotah; Zotti, Linda Angela; Cuevas, Juan Carlos; Meyhofer, Edgar; Reddy, Pramod

2018-02-01

The study of thermoelectricity in molecular junctions is of fundamental interest for the development of various technologies including cooling (refrigeration) and heat-to-electricity conversion1-4. Recent experimental progress in probing the thermopower (Seebeck effect) of molecular junctions5-9 has enabled studies of the relationship between thermoelectricity and molecular structure10,11. However, observations of Peltier cooling in molecular junctions—a critical step for establishing molecular-based refrigeration—have remained inaccessible. Here, we report direct experimental observations of Peltier cooling in molecular junctions. By integrating conducting-probe atomic force microscopy12,13 with custom-fabricated picowatt-resolution calorimetric microdevices, we created an experimental platform that enables the unified characterization of electrical, thermoelectric and energy dissipation characteristics of molecular junctions. Using this platform, we studied gold junctions with prototypical molecules (Au-biphenyl-4,4'-dithiol-Au, Au-terphenyl-4,4''-dithiol-Au and Au-4,4'-bipyridine-Au) and revealed the relationship between heating or cooling and charge transmission characteristics. Our experimental conclusions are supported by self-energy-corrected density functional theory calculations. We expect these advances to stimulate studies of both thermal and thermoelectric transport in molecular junctions where the possibility of extraordinarily efficient energy conversion has been theoretically predicted2-4,14.

Dynamics of pi-junction interferometer circuits

DEFF Research Database (Denmark)

Kornkev, V.K.; Mozhaev, P.B.; Borisenko, I.V.

2002-01-01

The pi-junction superconducting circuit dynamics was studied by means of numerical simulation technique. Parallel arrays consisting of Josephson junctions of both 0- and pi-type were studied as a model of high-T-c grain-boundary Josephson junction. The array dynamics and the critical current depe...

Geodynamical simulation of the RRF triple junction

Science.gov (United States)

Wang, Z.; Wei, D.; Liu, M.; Shi, Y.; Wang, S.

2017-12-01

Triple junction is the point at which three plate boundaries meet. Three plates at the triple junction form a complex geological tectonics, which is a natural laboratory to study the interactions of plates. This work studies a special triple junction, the oceanic transform fault intersects the collinear ridges with different-spreading rates, which is free of influence of ridge-transform faults and nearby hotspots. First, we build 3-D numerical model of this triple junction used to calculate the stead-state velocity and temperature fields resulting from advective and conductive heat transfer. We discuss in detail the influence of the velocity and temperature fields of the triple junction from viscosity, spreading rate of the ridge. The two sides of the oceanic transform fault are different sensitivities to the two factors. And, the influence of the velocity mainly occurs within 200km of the triple junction. Then, we modify the model by adding a ridge-transform fault to above model and directly use the velocity structure of the Macquarie triple junction. The simulation results show that the temperature at both sides of the oceanic transform fault decreases gradually from the triple junction, but the temperature difference between the two sides is a constant about 200°. And, there is little effect of upwelling velocity away from the triple junction 100km. The model results are compared with observational data. The heat flux and thermal topography along the oceanic transform fault of this model are consistent with the observed data of the Macquarie triple junction. The earthquakes are strike slip distributed along the oceanic transform fault. Their depths are also consistent with the zone of maximum shear stress. This work can help us to understand the interactions of plates of triple junctions and help us with the foundation for the future study of triple junctions.

Loss models for long Josephson junctions

DEFF Research Database (Denmark)

Olsen, O. H.; Samuelsen, Mogens Rugholm

1984-01-01

A general model for loss mechanisms in long Josephson junctions is presented. An expression for the zero-field step is found for a junction of overlap type by means of a perturbation method. Comparison between analytic solution and perturbation result shows good agreement.......A general model for loss mechanisms in long Josephson junctions is presented. An expression for the zero-field step is found for a junction of overlap type by means of a perturbation method. Comparison between analytic solution and perturbation result shows good agreement....

Dynamics of the Josephson multi-junction system with junctions characterized by non-sinusoidal current - phase relationship

International Nuclear Information System (INIS)

Abal'osheva, I.; Lewandowski, S.J.

2004-01-01

It is shown that the inclusion of junctions characterized by non-sinusoidal current - phase relationship in the systems composed of multiple Josephson junctions - results in the appearance of additional system phase states. Numerical simulations and stability considerations confirm that those phase states can be realized in practice. Moreover, spontaneous formation of the grain boundary junctions in high-T c superconductors with non-trivial current-phase relations due to the d-wave symmetry of the order parameter is probable. Switching between the phase states of multiple grain boundary junction systems can lead to additional 1/f noise in high-T c superconductors. (author)

Theoretical and experimental investigations on synchronization in many-junction arrays of HTSC Josephson junctions. Final report

International Nuclear Information System (INIS)

Seidel, P.; Heinz, E.; Pfuch, A.; Machalett, F.; Krech, W.; Basler, M.

1996-06-01

Different many-junction arrays of Josephson junctions were studied theoretically to analyse the mechanisms of synchronization, the influence of internal and external parameters and the maximal allowed spread of parameters for the single junctions. Concepts to realize arrays using standard high-T c superconductor technology were created, e.g. the new arrangement of multijunction superconducting loops (MSL). First experimental results show the relevance of this concept. Intrinsic one-dimensional arrays in thin film technology were prepared as mesas out of Bi or Tl 2212 films. to characterize HTSC Josephson junctions methods based on the analysis of microwave-induced steps were developed. (orig.) [de

Single P-N junction tandem photovoltaic device

Science.gov (United States)

Walukiewicz, Wladyslaw [Kensington, CA; Ager, III, Joel W.; Yu, Kin Man [Lafayette, CA

2011-10-18

A single P-N junction solar cell is provided having two depletion regions for charge separation while allowing the electrons and holes to recombine such that the voltages associated with both depletion regions of the solar cell will add together. The single p-n junction solar cell includes an alloy of either InGaN or InAlN formed on one side of the P-N junction with Si formed on the other side in order to produce characteristics of a two junction (2J) tandem solar cell through only a single P-N junction. A single P-N junction solar cell having tandem solar cell characteristics will achieve power conversion efficiencies exceeding 30%.

Experimental studies of radiation damage of silicon detectors

International Nuclear Information System (INIS)

Angelescu, T.; Ghete, V.M.; Ghiordanescu, N.; Lazanu, I.; Mihul, A.; Golutvin, I.; Lazanu, S.; Savin, I.; Vasilescu, A.; Biggeri, U.; Borchi, E.; Bruzzi, M.; Li, Z.; Kraner, H.W.

1994-02-01

New particle physics experiments are correlated with high luminosity and/or high energy. The new generation of colliding beam machines which will be constructed will make an extrapolation of a factor of 100 in the center of mass energy and of 1000 in luminosity beyond present accelerators. The scientific community hopes that very exciting physics results could be achieved this way, from the solution to the problem of electroweak symmetry breaking to the possible discovery of new, unpredicted phenomena. The particles which compose the radiation field are: electrons, pions, neutrons, protons and photons. It has become evident that the problem of the radiation resistance of detectors in this severe environment is a crucial one. This situation is complicated more by the fact that detectors must work all the run time of the machine, and better all the time of the experiment, without replacement (part or whole). So, studies related to the investigation of the radiation hardness of all detector parts, are developing. The studies are in part material and device characterization after irradiation, and in part technological developments, made in order to find harder, cheaper technologies, for larger surfaces. Semiconductor detectors have proven to be a good choice for vertex and calorimeter. Both fixed target machines and colliders had utilized in the past silicon junction detectors as the whole or part of the detection system. Precision beam hodoscopes and sophisticated trigger devices with silicon are equally used. The associated electronics in located near the detectors, and is subjected to the same radiation fields. Studies of material and device radiation hardness are developing in parallel. Here the authors present results on the radiation hardness of silicon, both as a bulk material and as detectors, to neutron irradiation at high fluences

Dual-sided microstructured semiconductor neutron detectors (DSMSNDs)

International Nuclear Information System (INIS)

Fronk, Ryan G.; Bellinger, Steven L.; Henson, Luke C.; Ochs, Taylor R.; Smith, Colten T.; Kenneth Shultis, J.; McGregor, Douglas S.

2015-01-01

Microstructured semiconductor neutron detectors (MSNDs) have in recent years received much interest as high-efficiency replacements for thin-film-coated thermal neutron detectors. The basic device structure of the MSND involves micro-sized trenches that are etched into a vertically-oriented pvn-junction diode that are backfilled with a neutron converting material. Neutrons absorbed within the converting material induce fission of the parent nucleus, producing a pair of energetic charged-particle reaction products that can be counted by the diode. The MSND deep-etched microstructures produce good neutron-absorption and reaction-product counting efficiencies, offering a 10× improvement in intrinsic thermal neutron detection efficiency over thin-film-coated devices. Performance of present-day MSNDs are nearing theoretical limits; streaming paths between the conversion-material backfilled trenches, allow a considerable fraction of neutrons to pass undetected through the device. Dual-sided microstructured semiconductor neutron detectors (DSMSNDs) have been developed that utilize a complementary second set of trenches on the back-side of the device to count streaming neutrons. DSMSND devices are theoretically capable of greater than 80% intrinsic thermal neutron detection efficiency for a 1-mm thick device. The first such prototype DSMSNDs, presented here, have achieved 29.48±0.29% nearly 2× better than MSNDs with similar microstructure dimensions.

The anatomical locus of T-junction processing.

Science.gov (United States)

Schirillo, James A

2009-07-01

Inhomogeneous surrounds can produce either asymmetrical or symmetrical increment/decrement induction by orienting T-junctions to selectively group a test patch with surrounding regions [Melfi, T., & Schirillo, J. (2000). T-junctions in inhomogeneous surrounds. Vision Research, 40, 3735-3741]. The current experiments aimed to determine where T-junctions are processed by presenting each eye with a different image so that T-junctions exist only in the fused percept. Only minor differences were found between retinal and cortical versus cortical-only conditions, indicating that T-junctions are processed cortically.

Nuclear detectors. Physical principles of operation

International Nuclear Information System (INIS)

Pochet, Th.

2005-01-01

Nuclear detection is used in several domains of activity from the physics research, the nuclear industry, the medical and industrial sectors, the security etc. The particles of interest are the α, β, X, γ and neutrons. This article treats of the basic physical properties of radiation detection, the general characteristics of the different classes of existing detectors and the particle/matter interactions: 1 - general considerations; 2 - measurement types and definitions: pulse mode, current mode, definitions; 3 - physical principles of direct detection: introduction and general problem, materials used in detection, simple device, junction semiconductor device, charges generation and transport inside matter, signal generation; 4 - physical principles of indirect detection: introduction, scintillation mechanisms, definition and properties of scintillators. (J.S.)

Pixelized M-pi-n CdTe detector coupled to Medipix2 readout chip

CERN Document Server

Kalliopuska, J; Penttila, R; Andersson, H; Nenonen, S; Gadda, A; Pohjonen, H; Vanttajac, I; Laaksoc, P; Likonen, J

2011-01-01

We have realized a simple method for patterning an M-pi-n CdTe diode with a deeply diffused pn-junction, such as indium anode on CdTe. The method relies on removing the semiconductor material on the anode-side of the diode until the physical junction has been reached. The pixelization of the p-type CdTe diode with an indium anode has been demonstrated by patterning perpendicular trenches with a high precision diamond blade and pulsed laser. Pixelization or microstrip pattering can be done on both sides of the diode, also on the cathode-side to realize double sided detector configuration. The article compares the patterning quality of the diamond blade process, pulsed pico-second and femto-second lasers processes. Leakage currents and inter-strip resistance have been measured and are used as the basis of the comparison. Secondary ion mass spectrometry (SIMS) characterization has been done for a diode to define the pn-junction depth and to see the effect of the thermal loads of the flip-chip bonding process. Th...

Mixing in T-junctions

NARCIS (Netherlands)

Kok, Jacobus B.W.; van der Wal, S.

1996-01-01

The transport processes that are involved in the mixing of two gases in a T-junction mixer are investigated. The turbulent flow field is calculated for the T-junction with the k- turbulence model by FLOW3D. In the mathematical model the transport of species is described with a mixture fraction

Effect of junction configurations on microdroplet formation in a T-junction microchannel

Science.gov (United States)

Lih, F. L.; Miao, J. M.

2015-03-01

This study investigates the dynamic formation process of water microdroplets in a silicon oil flow in a T-junction microchannel. Segmented water microdroplets are formed at the junction when the water flow is perpendicularly injected into the silicon oil flow in a straight rectangular microchannel. This study further presents the effects of the water flow inlet geometry on hydrodynamic characteristics of water microdroplet formation. A numerical multiphase volume of fluid (VOF) scheme is coupled to solve the unsteady three-dimensional laminar Navier-Stokes equations to depict the droplet formation phenomena at the junction. Predicted results on the length and generated frequency of the microdroplets agree well with experimental results in a T-junction microchannel with straight and flat inlets (the base model) for both fluid flows. Empirical correlations are reported between the volumetric flow ratio and the dimensionless microdroplet length or dimensionless frequency of droplet generation at a fixed capillary number of 4.7 · 10-3. The results of this study indicate a reduction in the droplet length of approximately 21% if the straight inlet for the water flow is modified to a downstream sudden contraction inlet for the water flow.

Recent technological developments on LGAD and iLGAD detectors for tracking and timing applications

Science.gov (United States)

Pellegrini, G.; Baselga, M.; Carulla, M.; Fadeyev, V.; Fernández-Martínez, P.; García, M. Fernández; Flores, D.; Galloway, Z.; Gallrapp, C.; Hidalgo, S.; Liang, Z.; Merlos, A.; Moll, M.; Quirion, D.; Sadrozinski, H.; Stricker, M.; Vila, I.

2016-09-01

This paper reports the latest technological development on the Low Gain Avalanche Detector (LGAD) and introduces a new architecture of these detectors called inverse-LGAD (iLGAD). Both approaches are based on the standard Avalanche Photo Diodes (APD) concept, commonly used in optical and X-ray detection applications, including an internal multiplication of the charge generated by radiation. The multiplication is inherent to the basic n++-p+-p structure, where the doping profile of the p+ layer is optimized to achieve high field and high impact ionization at the junction. The LGAD structures are optimized for applications such as tracking or timing detectors for high energy physics experiments or medical applications where time resolution lower than 30 ps is required. Detailed TCAD device simulations together with the electrical and charge collection measurements are presented through this work.

Recent technological developments on LGAD and iLGAD detectors for tracking and timing applications

International Nuclear Information System (INIS)

Pellegrini, G.; Baselga, M.; Carulla, M.; Fadeyev, V.; Fernández-Martínez, P.; García, M. Fernández; Flores, D.; Galloway, Z.; Gallrapp, C.; Hidalgo, S.; Liang, Z.; Merlos, A.; Moll, M.; Quirion, D.; Sadrozinski, H.; Stricker, M.; Vila, I.

2016-01-01

This paper reports the latest technological development on the Low Gain Avalanche Detector (LGAD) and introduces a new architecture of these detectors called inverse-LGAD (iLGAD). Both approaches are based on the standard Avalanche Photo Diodes (APD) concept, commonly used in optical and X-ray detection applications, including an internal multiplication of the charge generated by radiation. The multiplication is inherent to the basic n"+"+–p"+–p structure, where the doping profile of the p"+ layer is optimized to achieve high field and high impact ionization at the junction. The LGAD structures are optimized for applications such as tracking or timing detectors for high energy physics experiments or medical applications where time resolution lower than 30 ps is required. Detailed TCAD device simulations together with the electrical and charge collection measurements are presented through this work.

Recent technological developments on LGAD and iLGAD detectors for tracking and timing applications

Energy Technology Data Exchange (ETDEWEB)

Pellegrini, G.; Baselga, M.; Carulla, M. [Centro Nacional de Microelectrónica, IMB-CNM-CSIC, Barcelona (Spain); Fadeyev, V. [Santa Cruz Institute of Particle Physics SCIPP, Santa Cruz, CA (United States); Fernández-Martínez, P. [Centro Nacional de Microelectrónica, IMB-CNM-CSIC, Barcelona (Spain); García, M. Fernández [Instituto de Física de Cantabria IFCA-CSIC-UC, Santander (Spain); Flores, D. [Centro Nacional de Microelectrónica, IMB-CNM-CSIC, Barcelona (Spain); Galloway, Z. [Santa Cruz Institute of Particle Physics SCIPP, Santa Cruz, CA (United States); Gallrapp, C. [CERN, Geneva (Switzerland); Hidalgo, S. [Centro Nacional de Microelectrónica, IMB-CNM-CSIC, Barcelona (Spain); Liang, Z. [Santa Cruz Institute of Particle Physics SCIPP, Santa Cruz, CA (United States); Merlos, A. [Centro Nacional de Microelectrónica, IMB-CNM-CSIC, Barcelona (Spain); Moll, M. [CERN, Geneva (Switzerland); Quirion, D. [Centro Nacional de Microelectrónica, IMB-CNM-CSIC, Barcelona (Spain); Sadrozinski, H. [Santa Cruz Institute of Particle Physics SCIPP, Santa Cruz, CA (United States); Stricker, M. [CERN, Geneva (Switzerland); Vila, I. [Instituto de Física de Cantabria IFCA-CSIC-UC, Santander (Spain)

2016-09-21

This paper reports the latest technological development on the Low Gain Avalanche Detector (LGAD) and introduces a new architecture of these detectors called inverse-LGAD (iLGAD). Both approaches are based on the standard Avalanche Photo Diodes (APD) concept, commonly used in optical and X-ray detection applications, including an internal multiplication of the charge generated by radiation. The multiplication is inherent to the basic n{sup ++}–p{sup +}–p structure, where the doping profile of the p{sup +} layer is optimized to achieve high field and high impact ionization at the junction. The LGAD structures are optimized for applications such as tracking or timing detectors for high energy physics experiments or medical applications where time resolution lower than 30 ps is required. Detailed TCAD device simulations together with the electrical and charge collection measurements are presented through this work.

Poster - Thur Eve - 57: Craniospinal irradiation with jagged-junction IMRT approach without beam edge matching for field junctions.

Science.gov (United States)

Cao, F; Ramaseshan, R; Corns, R; Harrop, S; Nuraney, N; Steiner, P; Aldridge, S; Liu, M; Carolan, H; Agranovich, A; Karva, A

2012-07-01

Craniospinal irradiation were traditionally treated the central nervous system using two or three adjacent field sets. A intensity-modulated radiotherapy (IMRT) plan (Jagged-Junction IMRT) which overcomes problems associated with field junctions and beam edge matching, improves planning and treatment setup efficiencies with homogenous target dose distribution was developed. Jagged-Junction IMRT was retrospectively planned on three patients with prescription of 36 Gy in 20 fractions and compared to conventional treatment plans. Planning target volume (PTV) included the whole brain and spinal canal to the S3 vertebral level. The plan employed three field sets, each with a unique isocentre. One field set with seven fields treated the cranium. Two field sets treated the spine, each set using three fields. Fields from adjacent sets were overlapped and the optimization process smoothly integrated the dose inside the overlapped junction. For the Jagged-Junction IMRT plans vs conventional technique, average homogeneity index equaled 0.08±0.01 vs 0.12±0.02, and conformity number equaled 0.79±0.01 vs 0.47±0.12. The 95% isodose surface covered (99.5±0.3)% of the PTV vs (98.1±2.0)%. Both Jagged-Junction IMRT plans and the conventional plans had good sparing of the organs at risk. Jagged-Junction IMRT planning provided good dose homogeneity and conformity to the target while maintaining a low dose to the organs at risk. Jagged-Junction IMRT optimization smoothly distributed dose in the junction between field sets. Since there was no beam matching, this treatment technique is less likely to produce hot or cold spots at the junction in contrast to conventional techniques. © 2012 American Association of Physicists in Medicine.

Valley dependent transport in graphene L junction

Science.gov (United States)

Chan, K. S.

2018-05-01

We studied the valley dependent transport in graphene L junctions connecting an armchair lead and a zigzag lead. The junction can be used in valleytronic devices and circuits. Electrons injected from the armchair lead into the junction is not valley polarized, but they can become valley polarized in the zigzag lead. There are Fermi energies, where the current in the zigzag lead is highly valley polarized and the junction is an efficient generator of valley polarized current. The features of the valley polarized current depend sensitively on the widths of the two leads, as well as the number of dimers in the armchair lead, because this number has a sensitive effect on the band structure of the armchair lead. When an external potential is applied to the junction, the energy range with high valley polarization is enlarged enhancing its function as a generator of highly valley polarized current. The scaling behavior found in other graphene devices is also found in L junctions, which means that the results presented here can be extended to junctions with larger dimensions after appropriate scaling of the energy.

Method of manufacturing Josephson junction integrated circuits

International Nuclear Information System (INIS)

Jillie, D.W. Jr.; Smith, L.N.

1985-01-01

Josephson junction integrated circuits of the current injection type and magnetically controlled type utilize a superconductive layer that forms both Josephson junction electrode for the Josephson junction devices on the integrated circuit as well as a ground plane for the integrated circuit. Large area Josephson junctions are utilized for effecting contact to lower superconductive layers and islands are formed in superconductive layers to provide isolation between the groudplane function and the Josephson junction electrode function as well as to effect crossovers. A superconductor-barrier-superconductor trilayer patterned by local anodization is also utilized with additional layers formed thereover. Methods of manufacturing the embodiments of the invention are disclosed

delta-biased Josephson tunnel junctions

DEFF Research Database (Denmark)

Monaco, R.; Mygind, Jesper; Koshelet, V.

2010-01-01

Abstract: The behavior of a long Josephson tunnel junction drastically depends on the distribution of the dc bias current. We investigate the case in which the bias current is fed in the central point of a one-dimensional junction. Such junction configuration has been recently used to detect...... the persistent currents circulating in a superconducting loop. Analytical and numerical results indicate that the presence of fractional vortices leads to remarkable differences from the conventional case of uniformly distributed dc bias current. The theoretical findings are supported by detailed measurements...

Junction depth measurement using carrier illumination

International Nuclear Information System (INIS)

Borden, Peter

2001-01-01

Carrier Illumination [trade mark] (CI) is a new method recently developed to meet the need for a non-destructive, high throughput junction depth measurement on patterned wafers. A laser beam creates a quasi-static excess carrier profile in the semiconductor underlying the activated junction. The excess carrier profile is fairly constant below the junction, and drops rapidly in the junction, creating a steep index of refraction gradient at the junction edge. Interference with light reflected from this index gradient provides a signal that is analyzed to determine the junction depth. The paper summarizes evaluation of performance in full NMOS and PMOS process flows, on both bare and patterned wafers. The aims have been to validate (1) performance in the presence of underlying layers typically found at the source/drain (S/D) process steps and (2) measurement on patterned wafers. Correlation of CI measurements to SIMS and transistor drive current are shown. The data were obtained from NMOS structures using As S/D and LDD implants. Correlations to SRP, SIMS and sheet resistance are shown for PMOS structures using B 11 LDD implants. Gage capability measurements are also presented

32-element beta detector developed at the Institute of Electron Technology (ITE)

Science.gov (United States)

Wegrzecki, Maciej; Yakushev, Alexander; Bar, Jan; Budzyński, Tadeusz; Grabiec, Piotr; Kłos, Helena; Panas, Andrzej; Słysz, Wojciech; Stolarski, Maciej; Szmigiel, Dariusz; Wegrzecka, Iwona; Zaborowski, Michał

2014-08-01

The paper presents the design, technology and parameters of a new .silicon detector for detection of electrons (below named as beta detector) developed at the Institute of Electron Technology (ITE). The detector will be used for research on transactinide elements at the GSI Helmholtzzentrum für Schwerionenforschung GmbH, Darmstadt (GSI). The detector consists of a monolithic 32-element array with an active area diameter of 90 mm and a thickness of 0.9 mm. The starting material is a high-resistivity ν silicon wafer (5 kΩcm resistivity). 32 planar p+-ν junctions are formed by boron diffusion on the top side of the wafer. On the bottom side, an n+ region, which forms a common cathode, is formed on the entire surface by phosphorus diffusion. The array is mounted on a special epoxy-glass laminate substrate, copper-clad on both sides. Two model detectors have been fabricated and studied. Very good electrical parameters have been achieved. For the first array, with supply voltage VR = 20 V, the minimum dark current was 8 nA, the maximum dark current 97.1 nA, and the average dark current 25.1 nA. For the second array, it was 11.5 nA, 378.8 nA and 40.0 nA respectively.

NbN tunnel junctions

International Nuclear Information System (INIS)

Villegier, J.C.; Vieux-Rochaz, L.; Goniche, M.; Renard, P.; Vabre, M.

1984-09-01

All-niobium nitride Josephon junctions have been prepared successfully using a new processing called SNOP: Selective Niobium (nitride) Overlap Process. Such a process involves the ''trilayer'' deposition on the whole wafer before selective patterning of the electrodes by optically controlled dry reactive ion etching. Only two photomask levels are need to define an ''overlap'' or a ''cross-type'' junction with a good accuracy. The properties of the niobium nitride films deposited by DC-magnetron sputtering and the surface oxide growth are analysed. The most critical point to obtain high quality and high gap value junctions resides in the early stage of the NbN counterelectrode growth. Some possibilities to overcome such a handicap exist even if the fabrication needs substrate temperatures below 250 0 C

Hysteresis development in superconducting Josephson junctions

International Nuclear Information System (INIS)

Refai, T.F.; Shehata, L.N.

1988-09-01

The resistively and capacitive shunted junction model is used to investigate hysteresis development in superconducting Josephson junctions. Two empirical formulas that relate the hysteresis width and the quasi-particle diffusion length in terms of the junctions electrical parameters, temperature and frequency are obtained. The obtained formulas provide a simple tool to investigate the full potentials of the hysteresis phenomena. (author). 9 refs, 3 figs

Fabrication of Josephson Junction without shadow evaporation

Science.gov (United States)

Wu, Xian; Ku, Hsiangsheng; Long, Junling; Pappas, David

We developed a new method of fabricating Josephson Junction (Al/AlOX/Al) without shadow evaporation. Statistics from room temperature junction resistance and measurement of qubits are presented. Unlike the traditional ``Dolan Bridge'' technique, this method requires two individual lithographies and straight evaporations of Al. Argon RF plasma is used to remove native AlOX after the first evaporation, followed by oxidation and second Al evaporation. Junction resistance measured at room temperature shows linear dependence on Pox (oxidation pressure), √{tox} (oxidation time), and inverse proportional to junction area. We have seen 100% yield of qubits made with this method. This method is promising because it eliminates angle dependence during Junction fabrication, facilitates large scale qubits fabrication.

Quantum synchronization effects in intrinsic Josephson junctions

International Nuclear Information System (INIS)

Machida, M.; Kano, T.; Yamada, S.; Okumura, M.; Imamura, T.; Koyama, T.

2008-01-01

We investigate quantum dynamics of the superconducting phase in intrinsic Josephson junctions of layered high-T c superconductors motivated by a recent experimental observation for the switching rate enhancement in the low temperature quantum regime. We pay attention to only the capacitive coupling between neighboring junctions and perform large-scale simulations for the Schroedinger equation derived from the Hamiltonian considering the capacitive coupling alone. The simulation focuses on an issue whether the switching of a junction induces those of the other junctions or not. The results reveal that the superconducting phase dynamics show synchronous behavior with increasing the quantum character, e.g., decreasing the junction plane area and effectively the temperature. This is qualitatively consistent with the experimental result

Experimental investigation of supercurrent enhancement in S-N-S junctions by non-equilibrium injection into supercurrent-carrying bound Andreev states

DEFF Research Database (Denmark)

Kutchinsky, Jonatan; Taboryski, Rafael Jozef; Sørensen, C B

2001-01-01

We report measurements on three-terminal superconductor-semiconductor-superconductor injection devices demonstrating enhancement of the supercurrent by injection from a superconducting injector electrode. Two other electrodes were used to form the detector junction. Applying a small voltage...... of enhancement of the supercurrent by non-equilibrium injection into bound supercurrent-carrying Andreev states. The effect persists to temperatures where the equilibrium supercurrent has vanished. (C) 2001 Elsevier Science B.V. All rights reserved....

Development of analog solid-state photo-detectors for Positron Emission Tomography

International Nuclear Information System (INIS)

Bisogni, Maria Giuseppina; Morrocchi, Matteo

2016-01-01

Solid-state photo-detectors are one of the main innovations of past century in the field of sensors. First produced in the early forties with the invention of the p–n junction in silicon and the study of its optical properties, photo-detectors received a major boost in the sixties when the p-i-n (PIN) photodiode was developed and successfully used in several applications. The development of devices with internal gain, avalanche photodiodes (APD) first and then Geiger-mode avalanche photodiodes, named single photon avalanche diode (SPAD), leads to a substantial improvement in sensitivity and allowed single photon detection. Later on, thousands of SPADs have been assembled in arrays of few millimeters squared (named SiPM, silicon photo-multiplier) with single photon resolution. The high internal gain of SiPMs, together with other features peculiar of the silicon technology like compactness, speed and compatibility with magnetic fields, promoted SiPMs as the principal photo-detector competitor of photomultipliers in many applications from radiation detection to medical imaging. This paper provides a review of the properties of analog solid-state photo-detectors. Particular emphasis is given to latest advances on Positron Emission Tomography instrumentation boosted by the adoption of the silicon photo-detectors as an alternative to photomultiplier tubes (PMTs). Special attention is dedicated to the SiPMs, which are playing a key role in the development of innovative scanners.

Development of analog solid-state photo-detectors for Positron Emission Tomography

Energy Technology Data Exchange (ETDEWEB)

Bisogni, Maria Giuseppina, E-mail: giuseppina.bisogni@pi.infn.it; Morrocchi, Matteo

2016-02-11

Solid-state photo-detectors are one of the main innovations of past century in the field of sensors. First produced in the early forties with the invention of the p–n junction in silicon and the study of its optical properties, photo-detectors received a major boost in the sixties when the p-i-n (PIN) photodiode was developed and successfully used in several applications. The development of devices with internal gain, avalanche photodiodes (APD) first and then Geiger-mode avalanche photodiodes, named single photon avalanche diode (SPAD), leads to a substantial improvement in sensitivity and allowed single photon detection. Later on, thousands of SPADs have been assembled in arrays of few millimeters squared (named SiPM, silicon photo-multiplier) with single photon resolution. The high internal gain of SiPMs, together with other features peculiar of the silicon technology like compactness, speed and compatibility with magnetic fields, promoted SiPMs as the principal photo-detector competitor of photomultipliers in many applications from radiation detection to medical imaging. This paper provides a review of the properties of analog solid-state photo-detectors. Particular emphasis is given to latest advances on Positron Emission Tomography instrumentation boosted by the adoption of the silicon photo-detectors as an alternative to photomultiplier tubes (PMTs). Special attention is dedicated to the SiPMs, which are playing a key role in the development of innovative scanners.

High-output microwave detector using voltage-induced ferromagnetic resonance

International Nuclear Information System (INIS)

Shiota, Yoichi; Suzuki, Yoshishige; Miwa, Shinji; Tamaru, Shingo; Nozaki, Takayuki; Kubota, Hitoshi; Fukushima, Akio; Yuasa, Shinji

2014-01-01

We investigated the voltage-induced ferromagnetic resonance (FMR) with various DC bias voltage and input RF power in magnetic tunnel junctions. We found that the DC bias monotonically increases the homodyne detection voltage due to the nonlinear FMR originating in an asymmetric magnetization-potential in the free layer. In addition, the linear increase of an output voltage to the input RF power in the voltage-induced FMR is more robust than that in spin-torque FMR. These characteristics enable us to obtain an output voltage more than ten times than that of microwave detectors using spin-transfer torque

Investigation of the oxygen-vacancy (A-center) defect complex profile in neutron irradiated high resistivity silicon junction particle detectors

International Nuclear Information System (INIS)

Li, Zheng; Kraner, H.W.; Verbitskaya, E.; Eremin, V.; Ivanov, A.; Rubinelli, F.A.; Fonash, S.J.

1992-02-01

Distributions of the A-center (oxygen-vacancy) in neutron silicon detectors have been studied using Deep Level Transient Spectroscopy. A-centers have been found to be nearly uniformly distributed in the silicon water depth for medium resistivity (0.1 - 0.2 kΩ-cm) silicon detectors. A positive filling pulse was needed to detect the A-centers in high resistivity (>4 kΩ-cm) silicon detectors, and this effect was found to be dependent on the oxidation temperature. A discussion of this effect is presented. 16 refs

Entropy Flow Through Near-Critical Quantum Junctions

Science.gov (United States)

Friedan, Daniel

2017-05-01

This is the continuation of Friedan (J Stat Phys, 2017. doi: 10.1007/s10955-017-1752-8). Elementary formulas are derived for the flow of entropy through a circuit junction in a near-critical quantum circuit close to equilibrium, based on the structure of the energy-momentum tensor at the junction. The entropic admittance of a near-critical junction in a bulk-critical circuit is expressed in terms of commutators of the chiral entropy currents. The entropic admittance at low frequency, divided by the frequency, gives the change of the junction entropy with temperature—the entropic "capacitance". As an example, and as a check on the formalism, the entropic admittance is calculated explicitly for junctions in bulk-critical quantum Ising circuits (free fermions, massless in the bulk), in terms of the reflection matrix of the junction. The half-bit of information capacity per end of critical Ising wire is re-derived by integrating the entropic "capacitance" with respect to temperature, from T=0 to T=∞.

Ballistic Josephson junctions based on CVD graphene

Science.gov (United States)

Li, Tianyi; Gallop, John; Hao, Ling; Romans, Edward

2018-04-01

Josephson junctions with graphene as the weak link between superconductors have been intensely studied in recent years, with respect to both fundamental physics and potential applications. However, most of the previous work was based on mechanically exfoliated graphene, which is not compatible with wafer-scale production. To overcome this limitation, we have used graphene grown by chemical vapour deposition (CVD) as the weak link of Josephson junctions. We demonstrate that very short, wide CVD-graphene-based Josephson junctions with Nb electrodes can work without any undesirable hysteresis in their electrical characteristics from 1.5 K down to a base temperature of 320 mK, and their gate-tuneable critical current shows an ideal Fraunhofer-like interference pattern in a perpendicular magnetic field. Furthermore, for our shortest junctions (50 nm in length), we find that the normal state resistance oscillates with the gate voltage, consistent with the junctions being in the ballistic regime, a feature not previously observed in CVD-graphene-based Josephson junctions.

Design and fabrication of an optimum peripheral region for low gain avalanche detectors

International Nuclear Information System (INIS)

Fernández-Martínez, Pablo; Flores, D.; Hidalgo, S.; Greco, V.; Merlos, A.; Pellegrini, G.; Quirion, D.

2016-01-01

Low Gain Avalanche Detectors (LGAD) represent a remarkable advance in high energy particle detection, since they provide a moderate increase (gain ~10) of the collected charge, thus leading to a notable improvement of the signal-to-noise ratio, which largely extends the possible application of Silicon detectors beyond their present working field. The optimum detection performance requires a careful implementation of the multiplication junction, in order to obtain the desired gain on the read out signal, but also a proper design of the edge termination and the peripheral region, which prevents the LGAD detectors from premature breakdown and large leakage current. This work deals with the critical technological aspects required to optimize the LGAD structure. The impact of several design strategies for the device periphery is evaluated with the aid of TCAD simulations, and compared with the experimental results obtained from the first LGAD prototypes fabricated at the IMB-CNM clean room. Solutions for the peripheral region improvement are also provided.

Design and fabrication of an optimum peripheral region for low gain avalanche detectors

Energy Technology Data Exchange (ETDEWEB)

Fernández-Martínez, Pablo; Flores, D., E-mail: david.flores@imb-cnm.csic.es; Hidalgo, S.; Greco, V.; Merlos, A.; Pellegrini, G.; Quirion, D.

2016-06-11

Low Gain Avalanche Detectors (LGAD) represent a remarkable advance in high energy particle detection, since they provide a moderate increase (gain ~10) of the collected charge, thus leading to a notable improvement of the signal-to-noise ratio, which largely extends the possible application of Silicon detectors beyond their present working field. The optimum detection performance requires a careful implementation of the multiplication junction, in order to obtain the desired gain on the read out signal, but also a proper design of the edge termination and the peripheral region, which prevents the LGAD detectors from premature breakdown and large leakage current. This work deals with the critical technological aspects required to optimize the LGAD structure. The impact of several design strategies for the device periphery is evaluated with the aid of TCAD simulations, and compared with the experimental results obtained from the first LGAD prototypes fabricated at the IMB-CNM clean room. Solutions for the peripheral region improvement are also provided.

Overlap junctions for high coherence superconducting qubits

Science.gov (United States)

Wu, X.; Long, J. L.; Ku, H. S.; Lake, R. E.; Bal, M.; Pappas, D. P.

2017-07-01

Fabrication of sub-micron Josephson junctions is demonstrated using standard processing techniques for high-coherence, superconducting qubits. These junctions are made in two separate lithography steps with normal-angle evaporation. Most significantly, this work demonstrates that it is possible to achieve high coherence with junctions formed on aluminum surfaces cleaned in situ by Ar plasma before junction oxidation. This method eliminates the angle-dependent shadow masks typically used for small junctions. Therefore, this is conducive to the implementation of typical methods for improving margins and yield using conventional CMOS processing. The current method uses electron-beam lithography and an additive process to define the top and bottom electrodes. Extension of this work to optical lithography and subtractive processes is discussed.

Surface-Enhanced Raman Scattering in Molecular Junctions.

Science.gov (United States)

Iwane, Madoka; Fujii, Shintaro; Kiguchi, Manabu

2017-08-18

Surface-enhanced Raman scattering (SERS) is a surface-sensitive vibrational spectroscopy that allows Raman spectroscopy on a single molecular scale. Here, we present a review of SERS from molecular junctions, in which a single molecule or molecules are made to have contact from the top to the bottom of metal surfaces. The molecular junctions are nice platforms for SERS as well as transport measurement. Electronic characterization based on the transport measurements of molecular junctions has been extensively studied for the development of miniaturized electronic devices. Simultaneous SERS and transport measurement of the molecular junctions allow both structural (geometrical) and electronic information on the single molecule scale. The improvement of SERS measurement on molecular junctions open the door toward new nanoscience and nanotechnology in molecular electronics.

Evaluation of FOXFET biased ac-coupled silicon strip detector prototypes for CDF SVX upgrade

Energy Technology Data Exchange (ETDEWEB)

Laakso, M. (Fermi National Accelerator Lab., Batavia, IL (United States) Research Inst. for High Energy Physics (SEFT), Helsinki (Finland))

1992-03-01

Silicon microstrip detectors for high-precision charged particle position measurements have been used in nuclear and particle physics for years. The detectors have evolved from simple surface barrier strip detectors with metal strips to highly complicated double-sided AC-coupled junction detectors. The feature of AC-coupling the readout electrodes from the diode strips necessitates the manufacture of a separate biasing structure for the strips, which comprises a common bias line together with a means for preventing the signal from one strip from spreading to its neighbors through the bias line. The obvious solution to this is to bias the strips through individual high value resistors. These resistors can be integrated on the detector wafer by depositing a layer of resistive polycrystalline silicon and patterning it to form the individual resistors. To circumvent the extra processing step required for polysilicon resistor processing and the rather difficult tuning of the process to obtain uniform and high enough resistance values throughout the large detector area, alternative methods for strip biasing have been devised. These include the usage of electron accumulation layer resistance for N{sup +}{minus} strips or the usage of the phenomenon known as the punch-through effect for P{sup +}{minus} strips. In this paper we present measurement results about the operation and radiation resistance of detectors with a punch-through effect based biasing structure known as a Field OXide Field-Effect Transistor (FOXFET), and present a model describing the FOXFET behavior. The studied detectors were prototypes for detectors to be used in the CDF silicon vertex detector upgrade.

Evaluation of FOXFET biased ac-coupled silicon strip detector prototypes for CDF SVX upgrade

International Nuclear Information System (INIS)

Laakso, M.

1992-03-01

Silicon microstrip detectors for high-precision charged particle position measurements have been used in nuclear and particle physics for years. The detectors have evolved from simple surface barrier strip detectors with metal strips to highly complicated double-sided AC-coupled junction detectors. The feature of AC-coupling the readout electrodes from the diode strips necessitates the manufacture of a separate biasing structure for the strips, which comprises a common bias line together with a means for preventing the signal from one strip from spreading to its neighbors through the bias line. The obvious solution to this is to bias the strips through individual high value resistors. These resistors can be integrated on the detector wafer by depositing a layer of resistive polycrystalline silicon and patterning it to form the individual resistors. To circumvent the extra processing step required for polysilicon resistor processing and the rather difficult tuning of the process to obtain uniform and high enough resistance values throughout the large detector area, alternative methods for strip biasing have been devised. These include the usage of electron accumulation layer resistance for N + - strips or the usage of the phenomenon known as the punch-through effect for P + - strips. In this paper we present measurement results about the operation and radiation resistance of detectors with a punch-through effect based biasing structure known as a Field OXide Field-Effect Transistor (FOXFET), and present a model describing the FOXFET behavior. The studied detectors were prototypes for detectors to be used in the CDF silicon vertex detector upgrade

Primary Tunnel Junction Thermometry

International Nuclear Information System (INIS)

Pekola, Jukka P.; Holmqvist, Tommy; Meschke, Matthias

2008-01-01

We describe the concept and experimental demonstration of primary thermometry based on a four-probe measurement of a single tunnel junction embedded within four arrays of junctions. We show that in this configuration random sample specific and environment-related errors can be avoided. This method relates temperature directly to Boltzmann constant, which will form the basis of the definition of temperature and realization of official temperature scales in the future

Ginzburg–Landau theory of mesoscopic multi-band Josephson junctions

Energy Technology Data Exchange (ETDEWEB)

Romeo, F.; De Luca, R., E-mail: rdeluca@unisa.it

2017-05-15

Highlights: • We generalize, in the realm of the Ginzburg–Landau theory, the de Gennes matching-matrix method for the interface order parameters to describe the superconducting properties of multi-band mesoscopic Josephson junctions. • The results are in agreement with a microscopic treatment of nanobridge junctions. • Thermal stability of the nanobridge junction is discussed in connection with recent experiments on iron-based grain-boundary junctions. - Abstract: A Ginzburg–Landau theory for multi-band mesoscopic Josephson junctions has been developed. The theory, obtained by generalizing the de Gennes matching-matrix method for the interface order parameters, allows the study of the phase dynamics of various types of mesoscopic Josephson junctions. As a relevant application, we studied mesoscopic double-band junctions also in the presence of a superconducting nanobridge interstitial layer. The results are in agreement with a microscopic treatment of the same system. Furthermore, thermal stability of the nanobridge junction is discussed in connection with recent experiments on iron-based grain-boundary junctions.

The influence of junction conformation on RNA cleavage by the hairpin ribozyme in its natural junction form.

Science.gov (United States)

Thomson, J B; Lilley, D M

1999-01-01

In the natural form of the hairpin ribozyme the two loop-carrying duplexes that comprise the majority of essential bases for activity form two adjacent helical arms of a four-way RNA junction. In the present work we have manipulated the sequence around the junction in a way known to perturb the global folding properties. We find that replacement of the junction by a different sequence that has the same conformational properties as the natural sequence gives closely similar reaction rate and Arrhenius activation energy for the substrate cleavage reaction. By comparison, rotation of the natural sequence in order to alter the three-dimensional folding of the ribozyme leads to a tenfold reduction in the kinetics of cleavage. Replacement with the U1 four-way junction that is resistant to rotation into the antiparallel structure required to allow interaction between the loops also gives a tenfold reduction in cleavage rate. The results indicate that the conformation of the junction has a major influence on the catalytic activity of the ribozyme. The results are all consistent with a role for the junction in the provision of a framework by which the loops are presented for interaction in order to create the active form of the ribozyme. PMID:10024170

Design of thin InGaAsN(Sb) n-i-p junctions for use in four-junction concentrating photovoltaic devices

Science.gov (United States)

Wilkins, Matthew M.; Gupta, James; Jaouad, Abdelatif; Bouzazi, Boussairi; Fafard, Simon; Boucherif, Abderraouf; Valdivia, Christopher E.; Arès, Richard; Aimez, Vincent; Schriemer, Henry P.; Hinzer, Karin

2017-04-01

Four-junction solar cells for space and terrestrial applications require a junction with a band gap of ˜1 eV for optimal performance. InGaAsN or InGaAsN(Sb) dilute nitride junctions have been demonstrated for this purpose, but in achieving the 14 mA/cm2 short-circuit current needed to match typical GaInP and GaAs junctions, the open-circuit voltage (VOC) and fill factor of these junctions are compromised. In multijunction devices incorporating materials with short diffusion lengths, we study the use of thin junctions to minimize sensitivity to varying material quality and ensure adequate transmission into lower junctions. An n-i-p device with 0.65-μm absorber thickness has sufficient short-circuit current, however, it relies less heavily on field-aided collection than a device with a 1-μm absorber. Our standard cell fabrication process, which includes a rapid thermal anneal of the contacts, yields a significant improvement in diffusion length and device performance. By optimizing a four-junction cell around a smaller 1-sun short-circuit current of 12.5 mA/cm2, we produced an InGaAsN(Sb) junction with open-circuit voltage of 0.44 V at 1000 suns (1 sun=100 mW/cm2), diode ideality factor of 1.4, and sufficient light transmission to allow >12.5 mA/cm2 in all four subcells.

Harmonic synchronization in resistively coupled Josephson junctions

International Nuclear Information System (INIS)

Blackburn, J.A.; Gronbech-Jensen, N.; Smith, H.J.T.

1994-01-01

The oscillations of two resistively coupled Josephson junctions biased only by a single dc current source are shown to lock harmonically in a 1:2 mode over a significant range of bias current, even when the junctions are identical. The dependence of this locking on both junction and coupling parameters is examined, and it is found that, for this particular two-junction configuration, 1:1 locking can never occur, and also that a minimum coupling coefficient is needed to support harmonic locking. Some issues related to subharmonic locking are also discussed

Supramolecular Systems and Chemical Reactions in Single-Molecule Break Junctions.

Science.gov (United States)

Li, Xiaohui; Hu, Duan; Tan, Zhibing; Bai, Jie; Xiao, Zongyuan; Yang, Yang; Shi, Jia; Hong, Wenjing

2017-04-01

The major challenges of molecular electronics are the understanding and manipulation of the electron transport through the single-molecule junction. With the single-molecule break junction techniques, including scanning tunneling microscope break junction technique and mechanically controllable break junction technique, the charge transport through various single-molecule and supramolecular junctions has been studied during the dynamic fabrication and continuous characterization of molecular junctions. This review starts from the charge transport characterization of supramolecular junctions through a variety of noncovalent interactions, such as hydrogen bond, π-π interaction, and electrostatic force. We further review the recent progress in constructing highly conductive molecular junctions via chemical reactions, the response of molecular junctions to external stimuli, as well as the application of break junction techniques in controlling and monitoring chemical reactions in situ. We suggest that beyond the measurement of single molecular conductance, the single-molecule break junction techniques provide a promising access to study molecular assembly and chemical reactions at the single-molecule scale.

Josephson junctions of multiple superconducting wires

Science.gov (United States)

Deb, Oindrila; Sengupta, K.; Sen, Diptiman

2018-05-01

We study the spectrum of Andreev bound states and Josephson currents across a junction of N superconducting wires which may have s - or p -wave pairing symmetries and develop a scattering matrix based formalism which allows us to address transport across such junctions. For N ≥3 , it is well known that Berry curvature terms contribute to the Josephson currents; we chart out situations where such terms can have relatively large effects. For a system of three s -wave or three p -wave superconductors, we provide analytic expressions for the Andreev bound-state energies and study the Josephson currents in response to a constant voltage applied across one of the wires; we find that the integrated transconductance at zero temperature is quantized to integer multiples of 4 e2/h , where e is the electron charge and h =2 π ℏ is Planck's constant. For a sinusoidal current with frequency ω applied across one of the wires in the junction, we find that Shapiro plateaus appear in the time-averaged voltage across that wire for any rational fractional multiple (in contrast to only integer multiples in junctions of two wires) of 2 e /(ℏ ω ) . We also use our formalism to study junctions of two p -wave and one s -wave wires. We find that the corresponding Andreev bound-state energies depend on the spin of the Bogoliubov quasiparticles; this produces a net magnetic moment in such junctions. The time variation of these magnetic moments may be controlled by an external voltage applied across the junction. We discuss experiments which may test our theory.

Molecular Diffusion through Cyanobacterial Septal Junctions.

Science.gov (United States)

Nieves-Morión, Mercedes; Mullineaux, Conrad W; Flores, Enrique

2017-01-03

Heterocyst-forming cyanobacteria grow as filaments in which intercellular molecular exchange takes place. During the differentiation of N 2 -fixing heterocysts, regulators are transferred between cells. In the diazotrophic filament, vegetative cells that fix CO 2 through oxygenic photosynthesis provide the heterocysts with reduced carbon and heterocysts provide the vegetative cells with fixed nitrogen. Intercellular molecular transfer has been traced with fluorescent markers, including calcein, 5-carboxyfluorescein, and the sucrose analogue esculin, which are observed to move down their concentration gradient. In this work, we used fluorescence recovery after photobleaching (FRAP) assays in the model heterocyst-forming cyanobacterium Anabaena sp. strain PCC 7120 to measure the temperature dependence of intercellular transfer of fluorescent markers. We find that the transfer rate constants are directly proportional to the absolute temperature. This indicates that the "septal junctions" (formerly known as "microplasmodesmata") linking the cells in the filament allow molecular exchange by simple diffusion, without any activated intermediate state. This constitutes a novel mechanism for molecular transfer across the bacterial cytoplasmic membrane, in addition to previously characterized mechanisms for active transport and facilitated diffusion. Cyanobacterial septal junctions are functionally analogous to the gap junctions of metazoans. Although bacteria are frequently considered just as unicellular organisms, there are bacteria that behave as true multicellular organisms. The heterocyst-forming cyanobacteria grow as filaments in which cells communicate. Intercellular molecular exchange is thought to be mediated by septal junctions. Here, we show that intercellular transfer of fluorescent markers in the cyanobacterial filament has the physical properties of simple diffusion. Thus, cyanobacterial septal junctions are functionally analogous to metazoan gap junctions

Dimensions of the ascending aorta in children and adolescents with repaired Tetralogy of Fallot obtained by cardiac magnetic resonance angiography.

Science.gov (United States)

Grothoff, Matthias; Mende, Meinhard; Graefe, Daniel; Daehnert, Ingo; Kostelka, Martin; Hoffmann, Janine; Freyhardt, Patrick; Lehmkuhl, Lukas; Gutberlet, Matthias; Mahler, Anne

2016-03-01

Dilatation of the ascending aorta is a common finding in Tetralogy of fallot (TOF). We sought to provide aortic dimensions in children and adolescents after corrected TOF obtained by contrast-enhanced cardiac-magnetic-resonance angiography (CE-CMRA) that could serve as reference values. We enrolled 101 children and adolescents (56 male) with a median age of 10.9 years. All patients underwent CE-CMRA imaging using a 3-dimensional spoiled gradient-echo-sequence. Aortic diameters were measured at the level of the aortic valve (AV), aortic sinus (AS), sino-tubular junction (STJ) and the ascending aorta (AA) and compared with normal values obtained from literature. Sex-specific aortic dimensions are given as percentile curves as well as z scores. Furthermore CMR volumetric and functional parameters as well as clinical and anamnestic data were analyzed to identify parameters that are associated with aortic dilatation. Diameters for aortic size for males were 3.6 + 16.6*BSA(0.5) at the AV level, 7.0 + 19.5*BSA(0.5) at the AS level, 7.0 + 14.4*BSA(0.5) at the STJ level and 7.3 + 15.5*BSA(0.5) at the AA level. Diameters for females were 5.8 + 14.1*BSA(0.5) at the AV level, 7.2 + 17.6*BSA(0.5) at the AS level, 5.2 + 15.4*BSA(0.5) at the STJ level and 2.0 + 17.8*BSA(0.5) at the AA level. All diameters in TOF patients were larger compared with normal values. The postoperative interval and age at examination were the only parameters associated with aortic size at all measured levels. We provide CE-CMRA data of aortic dimensions in children and adolescents after correction of TOF. Our data might be useful for an estimation of the "normal" aortic size in this patient cohort and can serve as a basis for future longitudinal studies adding prognostic data.

Josephson tunnel junctions in niobium films

International Nuclear Information System (INIS)

Wiik, Tapio.

1976-12-01

A method of fabricating stable Josephson tunnel junctions with reproducible characteristics is described. The junctions have a sandwich structure consisting of a vacuum evaporated niobium film, a niobium oxide layer produced by the glow discharge method and a lead film deposited by vacuum evaporation. Difficulties in producing thin-film Josephson junctions are discussed. Experimental results suggest that the lower critical field of the niobium film is the most essential parameter when evaluating the quality of these junctions. The dependence of the lower critical field on the film thickness and on the Ginzburg-Landau parameter of the film is studied analytically. Comparison with the properties of the evaporated films and with the previous calculations for bulk specimens shows that the presented model is applicable for most of the prepared samples. (author)

Josephson junctions with ferromagnetic alloy interlayer

Energy Technology Data Exchange (ETDEWEB)

Himmel, Nico

2015-07-23

Josephson junctions are used as active devices in superconducting electronics and quantum information technology. Outstanding properties are their distinct non-linear electrical characteristics and a usually sinusoidal relation between the current and the superconducting phase difference across the junction. In general the insertion of ferromagnetic material in the barrier of a Josephson junction is associated with a suppression of superconducting correlations. But also new phenomena can arise which may allow new circuit layouts and enhance the performance of applications. This thesis presents a systematic investigation for two concepts to fabricate Josephson junctions with a rather uncommon negative critical current. Such devices exhibit an intrinsic phase slip of π between the electrodes, so they are also known as π junctions. Both studies go well beyond existing experiments and in one system a π junction is shown for the first time. All the thin film junctions are based on superconducting Nb electrodes. In a first approach, barriers made from Si and Fe were investigated with respect to the realisation of π junctions by spin-flip processes. The distribution of Fe in the Si matrix was varied from pure layers to disperse compounds. The systematic fabrication of alloy barriers was facilitated by the development of a novel timing-based combinatorial sputtering technique for planetary deposition systems. An orthogonal gradient approach allowed to create binary layer libraries with independent variations of thickness and composition. Second, Nb vertical stroke AlO{sub x} vertical stroke Nb vertical stroke Ni{sub 60}Cu{sub 40} vertical stroke Nb (SIsFS) double barrier junctions were experimentally studied for the occurrence of proximity effect induced order parameter oscillations. Detailed dependencies of the critical current density on the thickness of s-layer and F-layer were acquired and show a remarkable agreement to existing theoretical predictions. Especially

Josephson junctions with ferromagnetic alloy interlayer

International Nuclear Information System (INIS)

Himmel, Nico

2015-01-01

Josephson junctions are used as active devices in superconducting electronics and quantum information technology. Outstanding properties are their distinct non-linear electrical characteristics and a usually sinusoidal relation between the current and the superconducting phase difference across the junction. In general the insertion of ferromagnetic material in the barrier of a Josephson junction is associated with a suppression of superconducting correlations. But also new phenomena can arise which may allow new circuit layouts and enhance the performance of applications. This thesis presents a systematic investigation for two concepts to fabricate Josephson junctions with a rather uncommon negative critical current. Such devices exhibit an intrinsic phase slip of π between the electrodes, so they are also known as π junctions. Both studies go well beyond existing experiments and in one system a π junction is shown for the first time. All the thin film junctions are based on superconducting Nb electrodes. In a first approach, barriers made from Si and Fe were investigated with respect to the realisation of π junctions by spin-flip processes. The distribution of Fe in the Si matrix was varied from pure layers to disperse compounds. The systematic fabrication of alloy barriers was facilitated by the development of a novel timing-based combinatorial sputtering technique for planetary deposition systems. An orthogonal gradient approach allowed to create binary layer libraries with independent variations of thickness and composition. Second, Nb vertical stroke AlO x vertical stroke Nb vertical stroke Ni 60 Cu 40 vertical stroke Nb (SIsFS) double barrier junctions were experimentally studied for the occurrence of proximity effect induced order parameter oscillations. Detailed dependencies of the critical current density on the thickness of s-layer and F-layer were acquired and show a remarkable agreement to existing theoretical predictions. Especially a variation of

Molecular series-tunneling junctions.

Science.gov (United States)

Liao, Kung-Ching; Hsu, Liang-Yan; Bowers, Carleen M; Rabitz, Herschel; Whitesides, George M

2015-05-13

Charge transport through junctions consisting of insulating molecular units is a quantum phenomenon that cannot be described adequately by classical circuit laws. This paper explores tunneling current densities in self-assembled monolayer (SAM)-based junctions with the structure Ag(TS)/O2C-R1-R2-H//Ga2O3/EGaIn, where Ag(TS) is template-stripped silver and EGaIn is the eutectic alloy of gallium and indium; R1 and R2 refer to two classes of insulating molecular units-(CH2)n and (C6H4)m-that are connected in series and have different tunneling decay constants in the Simmons equation. These junctions can be analyzed as a form of series-tunneling junctions based on the observation that permuting the order of R1 and R2 in the junction does not alter the overall rate of charge transport. By using the Ag/O2C interface, this system decouples the highest occupied molecular orbital (HOMO, which is localized on the carboxylate group) from strong interactions with the R1 and R2 units. The differences in rates of tunneling are thus determined by the electronic structure of the groups R1 and R2; these differences are not influenced by the order of R1 and R2 in the SAM. In an electrical potential model that rationalizes this observation, R1 and R2 contribute independently to the height of the barrier. This model explicitly assumes that contributions to rates of tunneling from the Ag(TS)/O2C and H//Ga2O3 interfaces are constant across the series examined. The current density of these series-tunneling junctions can be described by J(V) = J0(V) exp(-β1d1 - β2d2), where J(V) is the current density (A/cm(2)) at applied voltage V and βi and di are the parameters describing the attenuation of the tunneling current through a rectangular tunneling barrier, with width d and a height related to the attenuation factor β.

Performance of single-junction and dual-junction InGaP/GaAs solar cells under low concentration ratios

International Nuclear Information System (INIS)

Khan, Aurangzeb; Yamaguchi, Masafumi; Takamoto, Tatsuya

2004-01-01

A study of the performance of single-junction InGaP/GaAs and dual-junction InGaP/GaAs tandem cells under low concentration ratios (up to 15 suns), before and after 1 MeV electron irradiation is presented. Analysis of the tunnel junction parameters under different concentrated light illuminations reveals that the peak current (J P ) and valley current (J V ) densities should be greater than the short-circuit current density (J sc ) for better performance. The tunnel junction behavior against light intensity improved after irradiation. This led to the suggestion that the peak current density (J P ) and valley current density (J V ) of the tunnel junction were enhanced after irradiation or the peak current was shifted to higher concentration. The recovery of the radiation damage under concentrated light illumination conditions suggests that the performance of the InGaP/GaAs tandem solar cell can be enhanced even under low concentration ratios

Current noise in tunnel junctions

Energy Technology Data Exchange (ETDEWEB)

Frey, Moritz; Grabert, Hermann [Physikalisches Institut, Universitaet Freiburg, Hermann-Herder-Strasse 3, 79104, Freiburg (Germany)

2017-06-15

We study current fluctuations in tunnel junctions driven by a voltage source. The voltage is applied to the tunneling element via an impedance providing an electromagnetic environment of the junction. We use circuit theory to relate the fluctuations of the current flowing in the leads of the junction with the voltage fluctuations generated by the environmental impedance and the fluctuations of the tunneling current. The spectrum of current fluctuations is found to consist of three parts: a term arising from the environmental Johnson-Nyquist noise, a term due to the shot noise of the tunneling current and a third term describing the cross-correlation between these two noise sources. Our phenomenological theory reproduces previous results based on the Hamiltonian model for the dynamical Coulomb blockade and provides a simple understanding of the current fluctuation spectrum in terms of circuit theory and properties of the average current. Specific results are given for a tunnel junction driven through a resonator. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Curved Josephson junction

International Nuclear Information System (INIS)

Dobrowolski, Tomasz

2012-01-01

The constant curvature one and quasi-one dimensional Josephson junction is considered. On the base of Maxwell equations, the sine–Gordon equation that describes an influence of curvature on the kink motion was obtained. It is showed that the method of geometrical reduction of the sine–Gordon model from three to lower dimensional manifold leads to an identical form of the sine–Gordon equation. - Highlights: ► The research on dynamics of the phase in a curved Josephson junction is performed. ► The geometrical reduction is applied to the sine–Gordon model. ► The results of geometrical reduction and the fundamental research are compared.

Josephson tunnel junctions with ferromagnetic interlayer

International Nuclear Information System (INIS)

Weides, M.P.

2006-01-01

Superconductivity and ferromagnetism are well-known physical properties of solid states that have been widely studied and long thought about as antagonistic phenomena due to difference in spin ordering. It turns out that the combination of both superconductor and ferromagnet leads to a very rich and interesting physics. One particular example, the phase oscillations of the superconducting order parameter inside the ferromagnet, will play a major role for the devices discussed in this work. In this thesis, I present Josephson junctions with a thin Al 2 O 3 tunnel barrier and a ferromagnetic interlayer, i.e. superconductor-insulator-ferromagnet-superconductor (SIFS) stacks. The fabrication of junctions was optimized regarding the insulation of electrodes and the homogeneity of the current transport. The junctions were either in the 0 or π coupled ground state, depending on the thickness of the ferromagnetic layer and on temperature. The influence of ferromagnetic layer thickness on the transport properties and the coupling (0, π) of SIFS tunnel junctions was studied. Furthermore, using a stepped ferromagnetic layer with well-chosen thicknesses, I obtained the so-called 0-π Josephson junction. At a certain temperature this 0-π junction can be made perfectly symmetric. In this case the ground state corresponds to a vortex of supercurrent creating a magnetic flux which is a fraction of the magnetic flux quantum Φ 0 . Such structures allow to study the physics of fractional vortices and to build various electronic circuits based on them. The SIFS junctions presented here have an exponentially vanishing damping at T → 0. The SIFS technology developed within the framework of this work may be used to construct classical and quantum devices such as oscillators, memory cells and qubits. (orig.)

Josephson tunnel junctions with ferromagnetic interlayer

Energy Technology Data Exchange (ETDEWEB)

Weides, M.P.

2006-07-01

Superconductivity and ferromagnetism are well-known physical properties of solid states that have been widely studied and long thought about as antagonistic phenomena due to difference in spin ordering. It turns out that the combination of both superconductor and ferromagnet leads to a very rich and interesting physics. One particular example, the phase oscillations of the superconducting order parameter inside the ferromagnet, will play a major role for the devices discussed in this work. In this thesis, I present Josephson junctions with a thin Al{sub 2}O{sub 3} tunnel barrier and a ferromagnetic interlayer, i.e. superconductor-insulator-ferromagnet-superconductor (SIFS) stacks. The fabrication of junctions was optimized regarding the insulation of electrodes and the homogeneity of the current transport. The junctions were either in the 0 or {pi} coupled ground state, depending on the thickness of the ferromagnetic layer and on temperature. The influence of ferromagnetic layer thickness on the transport properties and the coupling (0, {pi}) of SIFS tunnel junctions was studied. Furthermore, using a stepped ferromagnetic layer with well-chosen thicknesses, I obtained the so-called 0-{pi} Josephson junction. At a certain temperature this 0-{pi} junction can be made perfectly symmetric. In this case the ground state corresponds to a vortex of supercurrent creating a magnetic flux which is a fraction of the magnetic flux quantum {phi}{sub 0}. Such structures allow to study the physics of fractional vortices and to build various electronic circuits based on them. The SIFS junctions presented here have an exponentially vanishing damping at T {yields} 0. The SIFS technology developed within the framework of this work may be used to construct classical and quantum devices such as oscillators, memory cells and qubits. (orig.)

Towards ferromagnet/superconductor junctions on graphene

International Nuclear Information System (INIS)

Pakkayil, Shijin Babu

2015-01-01

the design which makes it possible to verify the quality of both type of contacts independently. The Josephson junction formed by two superconducting contacts and graphene between them shows several subgap conductance peaks corresponding to multiple Andreev reflections (MAR) taking place between the superconducting contacts. The observation of MAR shows that the superconductor has a good transparent interface with the graphene. The lower limit of the calculated superconducting coherence length (L φ ) in graphene is higher than the separation between the ferromagnet and the superconductor (100 nm), which is a necessary condition to observe interaction between the ferromagnet and the superconductor. Nonlocal spin valve measurements show that all four ferromagnetic contacts are spin sensitive and have a spin injection/detection efficiency of 10-12 %. Three terminal pseudo nonlocal measurements done on a ferromagnet/graphene/superconductor/graphene/ferromagnet (F/G/S/G/F) junction shows a two peak structure which suggests the occurrence of spin imbalance in the quasiparticle density of states in the superconductor. The measurements also show the disappearance of the two peak structure whenever the superconductor becomes normal. The amplitude of the peaks seems to increase with increasing ac bias current which is probably due to the higher number of diffusing spins. Reversing the magnetisation direction of one of the ferromagnet (injector or detector) however did not reverse the position of the peaks which is unusual. So further measurements need to be done on similar devices preferably at the base temperature of a dilution refrigerator to conclusively prove the existence of spin imbalance in the superconductor.

Towards ferromagnet/superconductor junctions on graphene

Energy Technology Data Exchange (ETDEWEB)

Pakkayil, Shijin Babu

2015-07-01

are also part of the design which makes it possible to verify the quality of both type of contacts independently. The Josephson junction formed by two superconducting contacts and graphene between them shows several subgap conductance peaks corresponding to multiple Andreev reflections (MAR) taking place between the superconducting contacts. The observation of MAR shows that the superconductor has a good transparent interface with the graphene. The lower limit of the calculated superconducting coherence length (L{sub φ}) in graphene is higher than the separation between the ferromagnet and the superconductor (100 nm), which is a necessary condition to observe interaction between the ferromagnet and the superconductor. Nonlocal spin valve measurements show that all four ferromagnetic contacts are spin sensitive and have a spin injection/detection efficiency of 10-12 %. Three terminal pseudo nonlocal measurements done on a ferromagnet/graphene/superconductor/graphene/ferromagnet (F/G/S/G/F) junction shows a two peak structure which suggests the occurrence of spin imbalance in the quasiparticle density of states in the superconductor. The measurements also show the disappearance of the two peak structure whenever the superconductor becomes normal. The amplitude of the peaks seems to increase with increasing ac bias current which is probably due to the higher number of diffusing spins. Reversing the magnetisation direction of one of the ferromagnet (injector or detector) however did not reverse the position of the peaks which is unusual. So further measurements need to be done on similar devices preferably at the base temperature of a dilution refrigerator to conclusively prove the existence of spin imbalance in the superconductor.

Mechanically Stacked Dual-Junction and Triple-Junction III-V/Si-IBC Cells with Efficiencies Exceeding 31.5% and 35.4%: Preprint

Energy Technology Data Exchange (ETDEWEB)

Schnabel, Manuel [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Tamboli, Adele C [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Warren, Emily L [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Schulte-Huxel, Henning [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Klein, Talysa [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Van Hest, Marinus F [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Geisz, John F [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Stradins, Paul [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Steiner, Myles A [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Rienaecker, Michael [Institute for Solar Energy Research Hamelin (ISFH); Merkle, Agnes [Institute for Solar Energy Research Hamelin (ISFH); Kajari-Schroeder, S. [Institute for Solar Energy Research Hamelin (ISFH); Niepelt, Raphael [Institute for Solar Energy Research Hamelin (ISFH); Schmidt, Jan [Institute for Solar Energy Research Hamelin (ISFH); Leibniz Universitat Hannover; Brendel, Rolf [Institute for Solar Energy Research Hamelin (ISFH); Leibniz Universitat Hannover; Peibst, Robby [Institute for Solar Energy Research Hamelin (ISFH); Leibniz Universitat Hannover

2017-10-02

Despite steady advancements in the efficiency of crystalline Silicon (c-Si) photovoltaics (PV) within the last decades, the theoretical efficiency limit of 29.4 percent depicts an insurmountable barrier for silicon-based single-junction solar cells. Combining the Si cell with a second absorber material on top in a dual junction tandem or triple junction solar cell is an attractive option to surpass this limit significantly. We demonstrate a mechanically stacked GaInP/Si dual-junction cell with an in-house measured efficiency of 31.5 percent and a GaInP/GaAs/Si triple-junction cell with a certified efficiency of 35.4 percent.

Electromagnetic waves in single- and multi-Josephson junctions

International Nuclear Information System (INIS)

Matsumoto, Hideki; Koyama, Tomio; Machida, Masahiko

2008-01-01

The terahertz wave emission from the intrinsic Josephson junctions is one of recent topics in high T c superconductors. We investigate, by numerical simulation, properties of the electromagnetic waves excited by a constant bias current in the single- and multi-Josephson junctions. Nonlinear equations of phase-differences are solved numerically by treating the effects of the outside electromagnetic fields as dynamical boundary conditions. It is shown that the emitted power of the electromagnetic wave can become large near certain retrapping points of the I-V characteristics. An instability of the inside phase oscillation is related to large amplitude of the oscillatory waves. In the single- (or homogeneous mutli-) Josephson junctions, electromagnetic oscillations can occur either in a form of standing waves (shorter junctions) or by formation of vortex-antivortex pairs (longer junctions). How these two effects affects the behavior of electromagnetic waves in the intrinsic Josephson junctions is discussed

Tunable Nitride Josephson Junctions.

Energy Technology Data Exchange (ETDEWEB)

Missert, Nancy A. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Henry, Michael David [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Lewis, Rupert M. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Howell, Stephen W. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Wolfley, Steven L. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Brunke, Lyle Brent [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Wolak, Matthaeus [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

2017-12-01

We have developed an ambient temperature, SiO₂/Si wafer - scale process for Josephson junctions based on Nb electrodes and Ta x N barriers with tunable electronic properties. The films are fabricated by magnetron sputtering. The electronic properties of the Ta_xN barriers are controlled by adjusting the nitrogen flow during sputtering. This technology offers a scalable alternative to the more traditional junctions based on AlO_x barriers for low - power, high - performance computing.

Characterization and TCAD modelling of termination structures for silicon radiation detectors

International Nuclear Information System (INIS)

Dittongo, S.; Boscardin, M.; Bosisio, L.; Ciacchi, M.; Dalla Betta, G.-F.; Gregori, P.; Piemonte, C.; Rachevskaia, I.; Ronchin, S.; Zorzi, N.

2004-01-01

We have recently proposed a novel junction termination structure for silicon radiation detectors, featuring all-p-type multiguard and scribe-line implants, with metal field-plates completely covering the gap between the implanted rings. The structure is intended for detector long-term stability enhancement even in adverse ambient conditions and for fabrication-process simplification. A thorough static characterization, including stability measurements in varying humidity conditions, has been carried out on a variety of samples fabricated at ITC-irst. Comparisons with diodes featuring an n-type implant along the border - or no edge structure at all - have been performed. The new structures show stable behaviour at relatively high bias (∼200 V), also in the presence of wide humidity changes (1-90%). A good qualitative agreement has been obtained between experimental results and simulation predictions, allowing to gain deep insight into the physical behaviour of the device

Scattering theory of superconductive tunneling in quantum junctions

International Nuclear Information System (INIS)

Shumeiko, V.S.; Bratus', E.N.

1997-01-01

A consistent theory of superconductive tunneling in single-mode junctions within a scattering formulation of Bogolyubov-de Gennes quantum mechanics is presented. The dc Josephson effect and dc quasiparticle transport in the voltage-biased junctions are considered. Elastic quasiparticle scattering by the junction determines the equilibrium Josephson current. The origin of Andreev bound states in tunnel junctions and their role in equilibrium Josephson transport are discussed. In contrast, quasiparticle tunneling in voltage-biased junctions is determined by inelastic scattering. A general expression for inelastic scattering amplitudes is derived and the quasiparticle current is calculated at all voltages with emphasis on a discussion of the properties of sub gap tunnel current and the nature of subharmonic gap structure

Temperature cycling test of planar hyper-pure germanium radiation detector

International Nuclear Information System (INIS)

Sakai, Eiji

1976-01-01

If a Ge (Li) detector is left at the normal temperature, generally it does not recover its original performance even when it is cooled again with liquid nitrogen, as Li ions in the compensated i zone precipitate by Li drift and it returns to p type which is the state before drift. One of the devices that overcomes this shortcoming is the p-n junction Ge detector, which required the production of high purity Ge single crystals to obtain the thick depletion layer. The planar or coaxial type detectors were produced using the Ge single crystals with impurity concentration of 10 10 /cm 3 and it was recognized that they showed the gamma detecting characteristic nearly equal to Ge (Li) detectors. They are now commercially available from a few companies. The author carried out the temperature-cycling test of the planar type hyperpure Ge detector sold by Nuclear Radiation Developments, Canada. First, applying liquid nitrogen, the leakage current, static capacity, gamma ray-detecting efficiency and energy resolution were measured. Then it was returned to room temperature. Since then, irregular cycling tests were carried out 15 times. The results didn't show any significant change in the gamma ray-detecting efficiency, energy resolution and static capacity. Though leakage current changed between 9.3 and 33 pA, it does not influence on the energy resolution because of small absolute values. It may be said that it is sufficiently stable in the temperature cycling from room temperature to 77 K. (Wakatsuki, Y.)

Short chain molecular junctions: Charge transport versus dipole moment

International Nuclear Information System (INIS)

Ikram, I. Mohamed; Rabinal, M.K.

2015-01-01

Graphical abstract: - Highlights: • The role of dipole moment of organic molecules on molecular junctions has been studied. • Molecular junctions constituted using propargyl molecules of different dipole moments. • The electronic properties of the molecules were calculated using Gaussian software. • Junctions show varying rectification due to their varying dipole moment and orientation. - Abstract: The investigation of the influence of dipole moment of short chain organic molecules having three carbon atoms varying in end group on silicon surface was carried on. Here, we use three different molecules of propargyl series varying in dipole moment and its orientation to constitute molecular junctions. The charge transport mechanism in metal–molecules–semiconductor (MMS) junction obtained from current–voltage (I–V) characteristics shows the rectification behavior for two junctions whereas the other junction shows a weak rectification. The electronic properties of the molecules were calculated using Gaussian software package. The observed rectification behavior of these junctions is examined and found to be accounted to the orientation of dipole moment and electron cloud density distribution inside the molecules

Some chaotic features of intrinsically coupled Josephson junctions

International Nuclear Information System (INIS)

Kolahchi, M.R.; Shukrinov, Yu.M.; Hamdipour, M.; Botha, A.E.; Suzuki, M.

2013-01-01

Highlights: ► Intrinsically coupled Josephson junctions model a high-T c superconductor. ► Intrinsically coupled Josephson junctions can act as a chaotic nonlinear system. ► Chaos could be due to resonance overlap. ► Avoiding parameters that lead to chaos is important for the design of resonators. -- Abstract: We look for chaos in an intrinsically coupled system of Josephson junctions. This study has direct applications for the high-T c resonators which require coherence amongst the junctions

Gap junctions and connexin-interacting proteins

NARCIS (Netherlands)

Giepmans, Ben N G

2004-01-01

Gap junctions form channels between adjacent cells. The core proteins of these channels are the connexins. Regulation of gap junction communication (GJC) can be modulated by connexin-associating proteins, such as regulatory protein phosphatases and protein kinases, of which c-Src is the

Planar Josephson tunnel junctions in a transverse magnetic field

DEFF Research Database (Denmark)

Monacoa, R.; Aarøe, Morten; Mygind, Jesper

2007-01-01

demagnetization effects imposed by the tunnel barrier and electrodes geometry are important. Measurements of the junction critical current versus magnetic field in planar Nb-based high-quality junctions with different geometry, size, and critical current density show that it is advantageous to use a transverse......Traditionally, since the discovery of the Josephson effect in 1962, the magnetic diffraction pattern of planar Josephson tunnel junctions has been recorded with the field applied in the plane of the junction. Here we discuss the static junction properties in a transverse magnetic field where...

Effect of solar-cell junction geometry on open-circuit voltage

Science.gov (United States)

Weizer, V. G.; Godlewski, M. P.

1985-01-01

Simple analytical models have been found that adequately describe the voltage behavior of both the stripe junction and dot junction grating cells as a function of junction area. While the voltage in the former case is found to be insensitive to junction area reduction, significant voltage increases are shown to be possible for the dot junction cell. With regard to cells in which the junction area has been increased in a quest for better performance, it was found that (1) texturation does not affect the average saturation current density J0, indicating that the texturation process is equivalent to a simple extension of junction area by a factor of square root of 3 and (2) the vertical junction cell geometry produces a sizable decrease in J0 that, unfortunately, is more than offset by the effects of attendant areal increases.

Advance of Mechanically Controllable Break Junction for Molecular Electronics.

Science.gov (United States)

Wang, Lu; Wang, Ling; Zhang, Lei; Xiang, Dong

2017-06-01

Molecular electronics stands for the ultimate size of functional elements, keeping up with an unstoppable trend over the past few decades. As a vital component of molecular electronics, single molecular junctions have attracted significant attention from research groups all over the world. Due to its pronounced superiority, the mechanically controllable break junctions (MCBJ) technique has been widely applied to characterize the dynamic performance of single molecular junctions. This review presents a system analysis for single-molecule junctions and offers an overview of four test-beds for single-molecule junctions, thus offering more insight into the mechanisms of electron transport. We mainly focus on the development of state-of-the-art mechanically controlled break junctions. The three-terminal gated MCBJ approaches are introduced to manipulate the electron transport of molecules, and MCBJs are combined with characterization techniques. Additionally, applications of MCBJs and remarkable properties of single molecules are addressed. Finally, the challenges and perspective for the mechanically controllable break junctions technique are provided.

PantherPix hybrid pixel γ-ray detector for radio-therapeutic applications

Science.gov (United States)

Neue, G.; Benka, T.; Havránek, M.; Hejtmánek, M.; Janoška, Z.; Kafka, V.; Korchak, O.; Lednický, D.; Marčišovská, M.; Marčišovský, M.; Popule, J.; Şmarhák, J.; Şvihra, P.; Tomášek, L.; Vrba, V.; Konček, O.; Semmler, M.

2018-02-01

This work focuses on the design of a semiconductor pixelated γ-ray camera with a pixel size of 1 mm2. The cost of semiconductor manufacturing is mainly driven by economies of scale, which makes silicon the cheapest semiconductor material due to its widespread utilization. The energy of γ-photons used in radiation therapy are in a range, in which the dominant interaction mechanism is Compton scattering in every conceivable sensor material. Since the Compton scattering cross section is linearly dependent upon Z, it is less rewarding to utilize high Z sensor materials, than it is in the case of X-ray detectors (X-rays interact also via the photoelectric effect whose cross section scales proportional to Zn, where n is ≈ 4,5). For the stated reasons it was decided to use the low Z material silicon (Z = 14) despite its worse detection efficiency. The proposed detector is designed as a portal detector to be used in radiation cancer therapy. The purpose of the detector is to ensure correct patient alignment, spatial dose monitoring and to provide the feedback necessary for an emergency shutdown should the spatial dose rate profile deviate from the treatment plan. Radiation therapy equipment is complex and thus failure prone and the consequences of malfunction are often life threatening. High spatial resolution and high detection efficiency are not a high design priority. The detector design priorities are focused up on radiation hardness, robustness and the ability to cover a large area cost efficiently. The quintessential idea of the PanterPix detector exploits the relaxed spatial resolution requirement to achieve the stated goals. The detector is composed of submodules, each submodule consisting of a Si sensor with an array of fully depleted detection diodes and 8 miniature custom design readout ASICs collecting and measuring the minuscule charge packets generated due to ionization in the PN junctions.

Microwave phase locking of Josephson-junction fluxon oscillators

DEFF Research Database (Denmark)

Salerno, M.; Samuelsen, Mogens Rugholm; Filatrella, G.

1990-01-01

Application of the classic McLaughlin-Scott soliton perturbation theory to a Josephson-junction fluxon subjected to a microwave field that interacts with the fluxon only at the junction boundaries reduces the problem of phase locking of the fluxon oscillation to the study of a two-dimensional fun......Application of the classic McLaughlin-Scott soliton perturbation theory to a Josephson-junction fluxon subjected to a microwave field that interacts with the fluxon only at the junction boundaries reduces the problem of phase locking of the fluxon oscillation to the study of a two...

The critical current of point symmetric Josephson tunnel junctions

International Nuclear Information System (INIS)

Monaco, Roberto

2016-01-01

Highlights: • We disclose some geometrical properties of the critical current field dependence that apply to a large class of Josephson junctions characterized by a point symmetric shape. • The developed theory is valid for any orientation of the applied magnetic field, therefore it allows the determine the consequences of field misalignment in the experimental setups. • We also address that the threshold curves of Josephson tunnel junctions with complex shapes can be expressed as a linear combination of the threshold curves of junctions with simpler point symmetric shapes. - Abstract: The physics of Josephson tunnel junctions drastically depends on their geometrical configurations. The shape of the junction determines the specific form of the magnetic-field dependence of its Josephson current. Here we address the magnetic diffraction patterns of specially shaped planar Josephson tunnel junctions in the presence of an in-plane magnetic field of arbitrary orientations. We focus on a wide ensemble of junctions whose shape is invariant under point reflection. We analyze the implications of this type of isometry and derive the threshold curves of junctions whose shape is the union or the relative complement of two point symmetric plane figures.

Solar cell junction temperature measurement of PV module

KAUST Repository

Huang, B.J.

2011-02-01

The present study develops a simple non-destructive method to measure the solar cell junction temperature of PV module. The PV module was put in the environmental chamber with precise temperature control to keep the solar PV module as well as the cell junction in thermal equilibrium with the chamber. The open-circuit voltage of PV module Voc is then measured using a short pulse of solar irradiation provided by a solar simulator. Repeating the measurements at different environment temperature (40-80°C) and solar irradiation S (200-1000W/m2), the correlation between the open-circuit voltage Voc, the junction temperature Tj, and solar irradiation S is derived.The fundamental correlation of the PV module is utilized for on-site monitoring of solar cell junction temperature using the measured Voc and S at a short time instant with open circuit. The junction temperature Tj is then determined using the measured S and Voc through the fundamental correlation. The outdoor test results show that the junction temperature measured using the present method, Tjo, is more accurate. The maximum error using the average surface temperature Tave as the junction temperature is 4.8 °C underestimation; while the maximum error using the present method is 1.3 °C underestimation. © 2010 Elsevier Ltd.

Soliton excitations in Josephson tunnel junctions

DEFF Research Database (Denmark)

Lomdahl, P. S.; Sørensen, O. H.; Christiansen, Peter Leth

1982-01-01

A detailed numerical study of a sine-Gordon model of the Josephson tunnel junction is compared with experimental measurements on junctions with different L / λJ ratios. The soliton picture is found to apply well on both relatively long (L / λJ=6) and intermediate (L / λJ=2) junctions. We find good...... agreement for the current-voltage characteristics, power output, and for the shape and height of the zero-field steps (ZFS). Two distinct modes of soliton oscillations are observed: (i) a bunched or congealed mode giving rise to the fundamental frequency f1 on all ZFS's and (ii) a "symmetric" mode which...... on the Nth ZFS yields the frequency Nf1 Coexistence of two adjacent frequencies is found on the third ZFS of the longer junction (L / λJ=6) in a narrow range of bias current as also found in the experiments. Small asymmetries in the experimental environment, a weak magnetic field, e.g., is introduced via...

Constructing carbon nanotube junctions by Ar ion beam irradiation

International Nuclear Information System (INIS)

Ishaq, Ahmad; Ni Zhichun; Yan Long; Gong Jinlong; Zhu Dezhang

2010-01-01

Carbon nanotubes (CNTs) irradiated by Ar ion beams at elevated temperature were studied. The irradiation-induced defects in CNTs are greatly reduced by elevated temperature. Moreover, the two types of CNT junctions, the crossing junction and the parallel junction, were formed. And the CNT networks may be fabricated by the two types of CNT junctions. The formation process and the corresponding mechanism of CNT networks are discussed.

Field modulation of the critical current in magnetic Josephson junctions

International Nuclear Information System (INIS)

Blamire, M G; Smiet, C B; Banerjee, N; Robinson, J W A

2013-01-01

The dependence of the critical current of a simple Josephson junction on the applied magnetic field is well known and, for a rectangular junction, gives rise to the classic ‘Fraunhofer’ modulation with periodic zeros at the fields that introduce a flux quantum into the junction region. Much recent work has been performed on Josephson junctions that contain magnetic layers. The magnetization of such layers introduces additional flux into the junction and, for large junction areas or strong magnetic materials, can significantly distort the modulation of the critical current and strongly suppress the maximum critical current. The growing interest in junctions that induce odd-frequency triplet pairing in a ferromagnet, and the need to make quantitative comparisons with theory, mean that a full understanding of the role of magnetic barriers in controlling the critical current is necessary. This paper analyses the effect of magnetism and various magnetic configurations on Josephson critical currents; the overall treatment applies to junctions of general shape, but the specific cases of square and rectangular junctions are considered. (paper)

Shunted-Josephson-junction model. II. The nonautonomous case

DEFF Research Database (Denmark)

Belykh, V. N.; Pedersen, Niels Falsig; Sørensen, O. H.

1977-01-01

The shunted-Josephson-junction model with a monochromatic ac current drive is discussed employing the qualitative methods of the theory of nonlinear oscillations. As in the preceding paper dealing with the autonomous junction, the model includes a phase-dependent conductance and a shunt capacitance....... The mathematical discussion makes use of the phase-space representation of the solutions to the differential equation. The behavior of the trajectories in phase space is described for different characteristic regions in parameter space and the associated features of the junction IV curve to be expected are pointed...... out. The main objective is to provide a qualitative understanding of the junction behavior, to clarify which kinds of properties may be derived from the shunted-junction model, and to specify the relative arrangement of the important domains in the parameter-space decomposition....

Observation of supercurrent in graphene-based Josephson junction

Energy Technology Data Exchange (ETDEWEB)

Wang, Libin; Li, Sen; Kang, Ning [Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University, Beijing 100871 (China); Xu, Chuan; Ren, Wencai [Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016 (China)

2015-07-01

Josephson junctions with a normal metal region sandwiched between two superconductors (S) are known as superconductor- normal-superconductor (SNS) structures. It has attracted significant attention especially when changing the normal metal with graphene, which allow for high tunability with the gate voltage and to study the proximity effect of the massless Dirac fermions. Here we report our work on graphene-based Josephson junction with a new two dimensional superconductor crystal, which grown directly on graphene, as superconducting electrodes. At low temperature, we observer proximity effect induced supercurrent flowing through the junction. The temperature and the magnetic field dependences of the critical current characteristics of the junction are also studied. The critical current exhibits a Fraunhofer-type diffraction pattern against magnetic field. Our experiments provided a new route of fabrication of graphene-based Josephson junction.

Josephson junction arrays and superconducting wire networks

International Nuclear Information System (INIS)

Lobb, C.J.

1992-01-01

Techniques used to fabricate integrated circuits make it possible to construct superconducting networks containing as many as 10 6 wires or Josephson junctions. Such networks undergo phase transitions from resistive high-temperature states to ordered low-resistance low-temperature states. The nature of the phase transition depends strongly on controllable parameters such as the strength of the superconductivity in each wire or junction and the external magnetic field. This paper will review the physics of these phase transitions, starting with the simplest zero-magnetic field case. This leads to a Kosterlitz-Thouless transition when the junctions or wires are weak, and a simple mean-field fransition when the junctions or wires are strong. Rich behavior, resulting from frustration, occurs in the presence of a magnetic field. (orig.)

Low-frequency noise in high-(Tc) superconductor Josephson junctions, SQUIDs, and magnetometers

Science.gov (United States)

Miklich, A. H.

1994-05-01

Design and performance of high-T(sub c) dc superconducting quantum interference devices (SQUID's), junctions that comprise them, and magnetometers made from them are described, with attention to sources of 1/f noise. Biepitaxial junctions are found to have large levels of critical current fluctuations which make them unsuitable for low-noise SQUID's; this suggests a poorly connected interface at the grain boundary junction. SQUID's from bicrystal junctions have levels of critical current noise controllable using bias current reversal techniques which leave the noise white down to frequencies of a few Hz. A SQUID with an energy resolution of 1.5 x 10(exp -30) J Hz(exp -1) at 1 Hz is reported. Magnetometers in which a (9 mm)(exp 2) pickup loop is directly coupled to a SQUID body have achieved field resolutions of 93 fT Hz(exp -1/2) down to frequencies below 1 Hz, improving to 39 fT Hz(exp -1/2) at 1 Hz with the addition of a 50mm-diameter single-turn flux transformer. Poor coupling to pickup loop makes it difficult to satisfy competing goals of high field resolution and small detector size necessary for multichannel biomagnetic imaging. Improved coupling is demonstrated by the use of multiturn-input-coil flux transformers, and a resolution of 35 fT Hz(exp -1/2) in the white noise region is reported with a (10 mm)(exp 2) pickup loop. However, additional 1/f noise from processed multilayer structures in the transformer limits the resolution at 1 Hz to 114 fT Hz(exp -1/2). High-T(sub c) SQUID's exhibit additional 1/f noise when cooled in a nonzero static magnetic field because of additional flux vortices trapped in the film, with the noise power at 1 Hz typically increasing by a factor of 10-20 in a field of 0.05mT (0.5 G). Finally, a SQUID-based voltmeter with a resolution of 9.2 pV Hz(exp -1/2) at 10 Hz (24 pV Hz(exp -1/2) at 1 Hz) is described.

Low-Frequency Noise in High-T Superconductor Josephson Junctions, Squids, and Magnetometers.

Science.gov (United States)

Miklich, Andrew Hostetler

The design and performance of high-T_ {rm c} dc superconducting quantum interference devices (SQUIDs), the junctions that comprise them, and magnetometers made from them are described, with special attention paid to sources of 1/f noise. Biepitaxial junctions are found to have large levels of critical current fluctuations which make them unsuitable for low-noise SQUIDs. This noise suggests a poorly connected interface at the grain boundary junction. SQUIDs from bicrystal junctions, in contrast, have levels of critical current noise that are controllable using bias current reversal techniques which leave the noise white down to frequencies of a few Hz. A SQUID with an energy resolution of 1.5times 10^{-30} J Hz^ {-1} at 1 Hz is reported. Magnetometers in which a (9 mm)^2 pickup loop is directly coupled to a SQUID body have achieved field resolutions of 93 fT Hz^{-1/2} down to frequencies below 1 Hz, improving to 39 fT Hz^{-1/2} at 1 Hz with the addition of a 50 mm-diameter single-turn flux transformer. Although the performance of these devices is sufficient for single -channel biomagnetometry or geophysical studies, their relatively poor coupling to the pickup loop makes it difficult to satisfy the competing goals of high field resolution and small detector size necessary for multichannel biomagnetic imaging. Improved coupling is demonstrated by the use of multiturn-input-coil flux transformers, and a resolution of 35 fT Hz^{-1/2} in the white noise region is reported with a (10 mm) ^2 pickup loop. However, additional 1/f noise from the processed multilayer structures in the transformer limits the resolution at 1 Hz to 114 fT Hz^ {-1/2}. High-T_{ rm c} SQUIDs are shown to exhibit additional 1/f noise when they are cooled in a nonzero static magnetic field because of the additional flux vortices trapped in the film, with the noise power at 1 Hz typically increasing by a factor of 10-20 in a field of 0.05 mT (0.5 G). Finally, a SQUID-based voltmeter with a resolution

Phenomenological approach to bistable behavior of Josephson junctions

International Nuclear Information System (INIS)

Nishi, K.; Nara, S.; Hamanaka, K.

1985-01-01

The interaction of unbiased Josephson junction with external electromagnetic field in the presence of externally applied uniform magnetic field is theoretically examined by means of phenomenological treatment. It is proposed that an irradiated junction with suitably chosen parameters shows a bistable behavior of voltage across the junction as a function of the radiation intensity

Multiplication in Silicon p-n Junctions

DEFF Research Database (Denmark)

Moll, John L.

1965-01-01

Multiplication values were measured in the collector junctions of silicon p-n-p and n-p-n transistors before and after bombardment by 1016 neutrons/cm2. Within experimental error there was no change either in junction fields, as deduced from capacitance measurements, or in multiplication values i...

Anchored PKA as a gatekeeper for gap junctions.

Science.gov (United States)

Pidoux, Guillaume; Taskén, Kjetil

2015-01-01

Anchored protein kinase A (PKA) bound to A Kinase Anchoring Protein (AKAP) mediates effects of localized increases in cAMP in defined subcellular microdomains and retains the specificity in cAMP-PKA signaling to distinct extracellular stimuli. Gap junctions are pores between adjacent cells constituted by connexin proteins that provide means of communication and transfer of small molecules. While the PKA signaling is known to promote human trophoblast cell fusion, the gap junction communication through connexin 43 (Cx43) is a prerequisite for this process. We recently demonstrated that trophoblast fusion is regulated by ezrin, a known AKAP, which binds to Cx43 and delivers PKA in the vicinity gap junctions. We found that disruption of the ezrin-Cx43 interaction abolished PKA-dependent phosphorylation of Cx43 as well as gap junction communication and subsequently cell fusion. We propose that the PKA-ezrin-Cx43 macromolecular complex regulating gap junction communication constitutes a general mechanism to control opening of Cx43 gap junctions by phosphorylation in response to cAMP signaling in various cell types.

Heat Transport in Graphene Ferromagnet-Insulator-Superconductor Junctions

Institute of Scientific and Technical Information of China (English)

LI Xiao-Wei

2011-01-01

We study heat transport in a graphene ferromagnet-insulator-superconducting junction. It is found that the thermal conductance of the graphene ferromagnet-insulator-superconductor (FIS) junction is an oscillatory function of the barrier strength x in the thin-barrier limit. The gate potential U0 decreases the amplitude of thermal conductance oscillation. Both the amplitude and phase of the thermal conductance oscillation varies with the exchange energy Eh. The thermal conductance of a graphene FIS junction displays the usual exponential dependence on temperature, reflecting the s-wave symmetry of superconducting graphene.%@@ We study heat transport in a graphene ferromagnet-insulator-superconducting junction.It is found that the thermal conductance of the graphene ferromagnet-insulator-superconductor(FIS)junction is an oscillatory function of the barrier strength X in the thin-barrier limit.The gate potential Uo decreases the amplitude of thermal conductance oscillation.Both the amplitude and phase of the thermal conductance oscillation varies with the exchange energy Eh.The thermal conductance of a graphene FIS junction displays the usual exponential dependence on temperature, reflecting the s-wave symmetry of superconducting graphene.

Terahertz Responses of Intrinsic Josephson Junctions in High TC Superconductors

International Nuclear Information System (INIS)

Wang, H. B.; Wu, P. H.; Yamashita, T.

2001-01-01

High frequency responses of intrinsic Josephson junctions up to 2.5THz, including the observation of Shapiro steps under various conditions, are reported and discussed in this Letter. The sample was an array of intrinsic Josephson junctions singled out from inside a high T C superconducting Bi 2 Sr 2 CaCu 2 O 8+x single crystal, with a bow-tie antenna integrated to it. The number of junctions in the array was controllable, the junctions were homogeneous, the distribution of applied irradiation among the junctions was even, and the junctions could synchronously respond to high frequency irradiation

Long Josephson Junction Stack Coupled to a Cavity

DEFF Research Database (Denmark)

Madsen, Søren Peder; Pedersen, Niels Falsig; Groenbech-Jensen, N.

2007-01-01

A stack of inductively coupled long Josephson junctions are modeled as a system of coupled sine-Gordon equations. One boundary of the stack is coupled electrically to a resonant cavity. With one fluxon in each Josephson junction, the inter-junction fluxon forces are repulsive. We look at a possible...... transition, induced by the cavity, to a bunched state....

Structural Origins of Conductance Fluctuations in Gold–Thiolate Molecular Transport Junctions

KAUST Repository

French, William R.

2013-03-21

We report detailed atomistic simulations combined with high-fidelity conductance calculations to probe the structural origins of conductance fluctuations in thermally evolving Au-benzene-1,4-dithiolate-Au junctions. We compare the behavior of structurally ideal junctions (where the electrodes are modeled as flat surfaces) to structurally realistic, experimentally representative junctions resulting from break-junction simulations. The enhanced mobility of metal atoms in structurally realistic junctions results in significant changes to the magnitude and origin of the conductance fluctuations. Fluctuations are larger by a factor of 2-3 in realistic junctions compared to ideal junctions. Moreover, in junctions with highly deformed electrodes, the conductance fluctuations arise primarily from changes in the Au geometry, in contrast to results for junctions with nondeformed electrodes, where the conductance fluctuations are dominated by changes in the molecule geometry. These results provide important guidance to experimentalists developing strategies to control molecular conductance, and also to theoreticians invoking simplified structural models of junctions to predict their behavior. © 2013 American Chemical Society.

Structural Origins of Conductance Fluctuations in Gold–Thiolate Molecular Transport Junctions

KAUST Repository

French, William R.; Iacovella, Christopher R.; Rungger, Ivan; Souza, Amaury Melo; Sanvito, Stefano; Cummings, Peter T.

2013-01-01

We report detailed atomistic simulations combined with high-fidelity conductance calculations to probe the structural origins of conductance fluctuations in thermally evolving Au-benzene-1,4-dithiolate-Au junctions. We compare the behavior of structurally ideal junctions (where the electrodes are modeled as flat surfaces) to structurally realistic, experimentally representative junctions resulting from break-junction simulations. The enhanced mobility of metal atoms in structurally realistic junctions results in significant changes to the magnitude and origin of the conductance fluctuations. Fluctuations are larger by a factor of 2-3 in realistic junctions compared to ideal junctions. Moreover, in junctions with highly deformed electrodes, the conductance fluctuations arise primarily from changes in the Au geometry, in contrast to results for junctions with nondeformed electrodes, where the conductance fluctuations are dominated by changes in the molecule geometry. These results provide important guidance to experimentalists developing strategies to control molecular conductance, and also to theoreticians invoking simplified structural models of junctions to predict their behavior. © 2013 American Chemical Society.

Silicon fiber with p-n junction

International Nuclear Information System (INIS)

Homa, D.; Cito, A.; Pickrell, G.; Hill, C.; Scott, B.

2014-01-01

In this study, we fabricated a p-n junction in a fiber with a phosphorous doped silicon core and fused silica cladding. The fibers were fabricated via a hybrid process of the core-suction and melt-draw techniques and maintained overall diameters ranging from 200 to 900 μm and core diameters of 20–800 μm. The p-n junction was formed by doping the fiber with boron and confirmed via the current-voltage characteristic. The demonstration of a p-n junction in a melt-drawn silicon core fiber paves the way for the seamless integration of optical and electronic devices in fibers.

Quasiparticle current in superconductor-semiconductor-superconductor junctions

International Nuclear Information System (INIS)

Tartakovskij, A.V.; Fistul', M.V.

1988-01-01

It is shown that the quasiparticle current in a superconductor-semiconductor-superconductor junction may significantly increase as a result of resonant passage of the quasiparticle along particular trajectories from periodically situated localized centers. A prediction of the theory is that with increasing junction resistance there should be a change from an excessive current to a insufficient current on the current-voltage characteristics (at high voltages). The effect of transparency of the boundaries on resonance tunneling in such junctions is also investigated

Transport properties of molecular junctions

CERN Document Server

Zimbovskaya, Natalya A

2013-01-01

A comprehensive overview of the physical mechanisms that control electron transport and the characteristics of metal-molecule-metal (MMM) junctions is presented. As far as possible, methods and formalisms presented elsewhere to analyze electron transport through molecules are avoided. This title introduces basic concepts—a description of the electron transport through molecular junctions—and briefly describes relevant experimental methods. Theoretical methods commonly used to analyze the electron transport through molecules are presented. Various effects that manifest in the electron transport through MMMs, as well as the basics of density-functional theory and its applications to electronic structure calculations in molecules are presented. Nanoelectronic applications of molecular junctions and similar systems are discussed as well. Molecular electronics is a diverse and rapidly growing field. Transport Properties of Molecular Junctions presents an up-to-date survey of the field suitable for researchers ...

Achievement of high diode sensitivity via spin torque-induced resonant expulsion in vortex magnetic tunnel junction

Science.gov (United States)

Tsunegi, Sumito; Taniguchi, Tomohiro; Yakushiji, Kay; Fukushima, Akio; Yuasa, Shinji; Kubota, Hitoshi

2018-05-01

We investigated the spin-torque diode effect in a magnetic tunnel junction with FeB free layer. Vortex-core expulsion was observed near the boundary between vortex and uniform states. A high diode voltage of 24 mV was obtained with alternative input power of 0.3 µW, corresponding to huge diode sensitivity of 80,000 mV/mW. In the expulsion region, a broad peak in the high frequency region was observed, which is attributed to the weak excitation of uniform magnetization by thermal noise. The high diode sensitivity is of great importance for device applications such as telecommunications, radar detectors, and high-speed magnetic-field sensors.

Spatial inhomogeneous barrier heights at graphene/semiconductor Schottky junctions

Science.gov (United States)

Tomer, Dushyant

Graphene, a semimetal with linear energy dispersion, forms Schottky junction when interfaced with a semiconductor. This dissertation presents temperature dependent current-voltage and scanning tunneling microscopy/spectroscopy (STM/S) measurements performed on graphene Schottky junctions formed with both three and two dimensional semiconductors. To fabricate Schottky junctions, we transfer chemical vapor deposited monolayer graphene onto Si- and C-face SiC, Si, GaAs and MoS2 semiconducting substrates using polymer assisted chemical method. We observe three main type of intrinsic spatial inhomogeneities, graphene ripples, ridges and semiconductor steps in STM imaging that can exist at graphene/semiconductor junctions. Tunneling spectroscopy measurements reveal fluctuations in graphene Dirac point position, which is directly related to the Schottky barrier height. We find a direct correlation of Dirac point variation with the topographic undulations of graphene ripples at the graphene/SiC junction. However, no such correlation is established at graphene/Si and Graphene/GaAs junctions and Dirac point variations are attributed to surface states and trapped charges at the interface. In addition to graphene ripples and ridges, we also observe atomic scale moire patterns at graphene/MoS2 junction due to van der Waals interaction at the interface. Periodic topographic modulations due to moire pattern do not lead to local variation in graphene Dirac point, indicating that moire pattern does not contribute to fluctuations in electronic properties of the heterojunction. We perform temperature dependent current-voltage measurements to investigate the impact of topographic inhomogeneities on electrical properties of the Schottky junctions. We observe temperature dependence in junction parameters, such as Schottky barrier height and ideality factor, for all types of Schottky junctions in forward bias measurements. Standard thermionic emission theory which assumes a perfect

Systematic study of shallow junction formation on germanium substrates

DEFF Research Database (Denmark)

Hellings, Geert; Rosseel, Erik; Clarysse, Trudo

2011-01-01

Published results on Ge junctions are benchmarked systematically using RS–XJ plots. The electrical activation level required to meet the ITRS targets is calculated. Additionally, new results are presented on shallow furnace-annealed B junctions and shallow laser-annealed As junctions. Co-implanting...

Well-to-wake analysis of ethanol-to-jet and sugar-to-jet pathways.

Science.gov (United States)

Han, Jeongwoo; Tao, Ling; Wang, Michael

2017-01-01

To reduce the environmental impacts of the aviation sector as air traffic grows steadily, the aviation industry has paid increasing attention to bio-based alternative jet fuels (AJFs), which may provide lower life-cycle petroleum consumption and greenhouse gas (GHG) emissions than petroleum jet fuel. This study presents well-to-wake (WTWa) results for four emerging AJFs: ethanol-to-jet (ETJ) from corn and corn stover, and sugar-to-jet (STJ) from corn stover via both biological and catalytic conversion. For the ETJ pathways, two plant designs were examined: integrated (processing corn or corn stover as feedstock) and distributed (processing ethanol as feedstock). Also, three H 2 options for STJ via catalytic conversion are investigated: external H 2 from natural gas (NG) steam methane reforming (SMR), in situ H 2 , and H 2 from biomass gasification. Results demonstrate that the feedstock is a key factor in the WTWa GHG emissions of ETJ: corn- and corn stover-based ETJ are estimated to produce WTWa GHG emissions that are 16 and 73%, respectively, less than those of petroleum jet. As for the STJ pathways, this study shows that STJ via biological conversion could generate WTWa GHG emissions 59% below those of petroleum jet. STJ via catalytic conversion could reduce the WTWa GHG emissions by 28% with H 2 from NG SMR or 71% with H 2 from biomass gasification than those of petroleum jet. This study also examines the impacts of co-product handling methods, and shows that the WTWa GHG emissions of corn stover-based ETJ, when estimated with a displacement method, are lower by 11 g CO 2 e/MJ than those estimated with an energy allocation method. Corn- and corn stover-based ETJ as well as corn stover-based STJ show potentials to reduce WTWa GHG emissions compared to petroleum jet. Particularly, WTWa GHG emissions of STJ via catalytic conversion depend highly on the hydrogen source. On the other hand, ETJ offers unique opportunities to exploit extensive existing corn ethanol

Junction Potentials Bias Measurements of Ion Exchange Membrane Permselectivity.

Science.gov (United States)

Kingsbury, Ryan S; Flotron, Sophie; Zhu, Shan; Call, Douglas F; Coronell, Orlando

2018-04-17

Ion exchange membranes (IEMs) are versatile materials relevant to a variety of water and waste treatment, energy production, and industrial separation processes. The defining characteristic of IEMs is their ability to selectively allow positive or negative ions to permeate, which is referred to as permselectivity. Measured values of permselectivity that equal unity (corresponding to a perfectly selective membrane) or exceed unity (theoretically impossible) have been reported for cation exchange membranes (CEMs). Such nonphysical results call into question our ability to correctly measure this crucial membrane property. Because weighing errors, temperature, and measurement uncertainty have been shown to not explain these anomalous permselectivity results, we hypothesized that a possible explanation are junction potentials that occur at the tips of reference electrodes. In this work, we tested this hypothesis by comparing permselectivity values obtained from bare Ag/AgCl wire electrodes (which have no junction) to values obtained from single-junction reference electrodes containing two different electrolytes. We show that permselectivity values obtained using reference electrodes with junctions were greater than unity for CEMs. In contrast, electrodes without junctions always produced permselectivities lower than unity. Electrodes with junctions also resulted in artificially low permselectivity values for AEMs compared to electrodes without junctions. Thus, we conclude that junctions in reference electrodes introduce two biases into results in the IEM literature: (i) permselectivity values larger than unity for CEMs and (ii) lower permselectivity values for AEMs compared to those for CEMs. These biases can be avoided by using electrodes without a junction.

On simulation of local fluxes in molecular junctions

Science.gov (United States)

Cabra, Gabriel; Jensen, Anders; Galperin, Michael

2018-05-01

We present a pedagogical review of the current density simulation in molecular junction models indicating its advantages and deficiencies in analysis of local junction transport characteristics. In particular, we argue that current density is a universal tool which provides more information than traditionally simulated bond currents, especially when discussing inelastic processes. However, current density simulations are sensitive to the choice of basis and electronic structure method. We note that while discussing the local current conservation in junctions, one has to account for the source term caused by the open character of the system and intra-molecular interactions. Our considerations are illustrated with numerical simulations of a benzenedithiol molecular junction.

Shunted-Josephson-junction model. I. The autonomous case

DEFF Research Database (Denmark)

Belykh, V. N.; Pedersen, Niels Falsig; Sørensen, O. H.

1977-01-01

The shunted-Josephson-junction model: the parallel combination of a capacitance, a phase-dependent conductance, and an ideal junction element biased by a constant current, is discussed for arbitrary values of the junction parameters. The main objective is to provide a qualitative understanding...... current-voltage curves are presented. The case with a time-dependent monochromatic bias current is treated in a similar fashion in the companion paper....

Joint diseases: from connexins to gap junctions.

Science.gov (United States)

Donahue, Henry J; Qu, Roy W; Genetos, Damian C

2017-12-19

Connexons form the basis of hemichannels and gap junctions. They are composed of six tetraspan proteins called connexins. Connexons can function as individual hemichannels, releasing cytosolic factors (such as ATP) into the pericellular environment. Alternatively, two hemichannel connexons from neighbouring cells can come together to form gap junctions, membrane-spanning channels that facilitate cell-cell communication by enabling signalling molecules of approximately 1 kDa to pass from one cell to an adjacent cell. Connexins are expressed in joint tissues including bone, cartilage, skeletal muscle and the synovium. Indicative of their importance as gap junction components, connexins are also known as gap junction proteins, but individual connexin proteins are gaining recognition for their channel-independent roles, which include scaffolding and signalling functions. Considerable evidence indicates that connexons contribute to the function of bone and muscle, but less is known about the function of connexons in other joint tissues. However, the implication that connexins and gap junctional channels might be involved in joint disease, including age-related bone loss, osteoarthritis and rheumatoid arthritis, emphasizes the need for further research into these areas and highlights the therapeutic potential of connexins.

Electrochemically assisted mechanically controllable break junction studies on the stacking configurations of oligo(phenylene ethynylene)s molecular junctions

International Nuclear Information System (INIS)

Zheng, Jue-Ting; Yan, Run-Wen; Tian, Jing-Hua; Liu, Jun-Yang; Pei, Lin-Qi; Wu, De-Yin; Dai, Ke; Yang, Yang; Jin, Shan

2016-01-01

Highlights: • I-V characteristics of a series of oligo(phenylene ethynylene)s molecular junctions were measured. • Conductance values were found to be dependent on molecular length and substituent group. • The measured low conductance values were explained by theoretical calculations. • EC-MCBJ is feasible to fabricate and characterize molecular junctions. - Abstract: We demonstrate an electrochemically assisted mechanically controllable break junction (EC-MCBJ) approach for current-voltage characteristic (I-V curve) measurements of metal/molecule/metal junctions. A series of oligo(phenylene ethynylene)s compounds (OPEs), including those involving electron withdrawing substituent group and different backbone lengths, had been successfully designed, synthesized, and placed onto the fabricated nanogap to form molecular junctions. The observed evolution in the measured conductances of OPEs indicates that there is a dependence of conductance on molecular length and substituent group. Compared with those extracted from conductance histogram construction, the conductances of OPEs measured from I-V curves are considerably lower. Based on the transmission spectra of OPEs that calculated by density functional theory (DFT) combined with non-equilibrium Green’s function (NEGF) method, this difference was attributed to our distinct experimental operation, which may give rise to a stacking configuration of two OPE molecules.

ALTERNATIVE MATERIALS FOR RAMP-EDGE SNS JUNCTIONS

International Nuclear Information System (INIS)

Jia, Q.; Fan, Y.; Gim, Y.

1999-01-01

We report on the processing optimization and fabrication of ramp-edge high-temperature superconducting junctions by using alternative materials for both superconductor electrodes and normal-metal barrier. By using Ag-doped YBa 2 Cu 3 O 7-x (Ag:YBCO) as electrodes and a cation-modified compound of (Pr y Gd 0.6-y )Ca 0.4 Ba 1.6 La 0.4 Cu 3 O 7 (y = 0.4, 0.5, and 0.6) as a normal-metal barrier, high-temperature superconducting Josephson junctions have been fabricated in a ramp-edge superconductor/normal-metal/superconductor (SNS) configuration. By using Ag:YBCO as electrodes, we have found that the processing controllability /reproducibility and the stability of the SNS junctions are improved substantially. The junctions fabricated with these alternative materials show well-defined RSJ-like current vs voltage characteristics at liquid nitrogen temperature

Electron-beam damaged high-temperature superconductor Josephson junctions

International Nuclear Information System (INIS)

Pauza, A.J.; Booij, W.E.; Herrmann, K.; Moore, D.F.; Blamire, M.G.; Rudman, D.A.; Vale, L.R.

1997-01-01

Results are presented on the fabrication and characterization of high critical temperature Josephson junctions in thin films of YBa 2 Cu 3 O 7-δ produced by the process of focused electron-beam irradiation using 350 keV electrons. The junctions so produced have uniform spatial current densities, can be described in terms of the resistive shunted junction model, and their current densities can be tailored for a given operating temperature. The physical properties of the damaged barrier can be described as a superconducting material of either reduced or zero critical temperature (T c ), which has a length of ∼15nm. The T c reduction is caused primarily by oxygen Frenkel defects in the Cu - O planes. The large beam currents used in the fabrication of the junctions mean that the extent of the barrier is limited by the incident electron-beam diameter, rather than by scattering within the film. The properties of the barrier can be calculated using a superconductor/normal/superconductor (SNS) junction model with no boundary resistance. From the SNS model, we can predict the scaling of the critical current resistance (I c R n ) product and gain insight into the factors controlling the junction properties, T c , and reproducibility. From the measured I c R n scaling data, we can predict the I c R n product of a junction at a given operating temperature with a given current density. I c R n products of ∼2mV can be achieved at 4.2 K. The reproducibility of several junctions in a number of samples can be characterized by the ratio of the maximum-to-minimum critical currents on the same substrate of less than 1.4. Stability over several months has been demonstrated at room and refrigerator temperatures (297 and 281 K) for junctions that have been initially over damaged and then annealed at temperatures ∼380K. (Abstract Truncated)

Shot noise in YBCO bicrystal Josephson junctions

DEFF Research Database (Denmark)

Constantinian, K.Y.; Ovsyannikov, G.A.; Borisenko, I.V.

2003-01-01

We measured spectral noise density in YBCO symmetric bicrystal Josephson junctions on sapphire substrates at bias voltages up to 100 mV and T 4.2 K. Normal state resistance of the Josephson junctions, R-N = 20-90 Omega and ICRN up to 2.2 mV have been observed in the experimental samples. Noise...... may explain the experimentally measured linewidth broadening of Josephson oscillations at mm and submm wave frequencies in high-Tc superconducting junctions. Experimental results are discussed in terms of bound states existing at surfaces of d-wave superconducting electrodes....

An array of cold-electron bolometers with SIN tunnel junctions and JFET readout for cosmology instruments

International Nuclear Information System (INIS)

Kuzmin, L

2008-01-01

A novel concept of the parallel/series array of Cold-Electron Bolometers (CEB) with Superconductor-Insulator-Normal (SIN) Tunnel Junctions has been proposed. The concept was developed specially for matching the CEB with JFET amplifier at conditions of high optical power load. The CEB is a planar antenna-coupled superconducting detector with high sensitivity. For combination of effective HF operation and low noise properties the current-biased CEBs are connected in series for DC and in parallel for HF signal. A signal is concentrated from an antenna to the absorber through the capacitance of the tunnel junctions and through additional capacitance for coupling of superconducting islands. Using array of CEBs the applications can be considerably extended to higher power load by distributing the power between N CEBs and decreasing the electron temperature. Due to increased responsivity the noise matching is so effective that photon NEP could be easily achieved at 300 mK with a room temperature JFET for wide range of optical power loads. The concept of the CEB array has been developed for the BOOMERanG balloon telescope and other Cosmology instruments

Intraepithelial lymphocytes express junctional molecules in murine small intestine

International Nuclear Information System (INIS)

Inagaki-Ohara, Kyoko; Sawaguchi, Akira; Suganuma, Tatsuo; Matsuzaki, Goro; Nawa, Yukifumi

2005-01-01

Intestinal intraepithelial lymphocytes (IEL) that reside at basolateral site regulate the proliferation and differentiation of epithelial cells (EC) for providing a first line of host defense in intestine. However, it remains unknown how IEL interact and communicate with EC. Here, we show that IEL express junctional molecules like EC. We identified mRNA expression of the junctional molecules in IEL such as zonula occludens (ZO)-1, occludin and junctional adhesion molecule (JAM) (tight junction), β-catenin and E-cadherin (adherens junction), and connexin26 (gap junction). IEL constitutively expressed occludin and E-cadherin at protein level, while other T cells in the thymus, spleen, liver, mesenteric lymph node, and Peyer's patches did not. γδ IEL showed higher level of these expressions than αβ IEL. The expression of occludin was augmented by anti-CD3 Ab stimulation. These results suggest the possibility of a novel role of IEL concerning epithelial barrier and communication between IEL and EC

Affordance-based individuation of junctions in Open Street Map

Directory of Open Access Journals (Sweden)

Simon Scheider

2012-06-01

Full Text Available We propose an algorithm that can be used to identify automatically the subset of street segments of a road network map that corresponds to a junction. The main idea is to use turn-compliant locomotion affordances, i.e., restricted patterns of supported movement, in order to specify junctions independently of their data representation, and in order to motivate tractable individuation and classification strategies. We argue that common approaches based solely on geometry or topology of the street segment graph are useful but insufficient proxies. They miss certain turn restrictions essential to junctions. From a computational viewpoint, the main challenge of affordance-based individuation of junctions lies in its complex recursive definition. In this paper, we show how Open Street Map data can be interpreted into locomotion affordances, and how the recursive junction definition can be translated into a deterministic algorithm. We evaluate this algorithm by applying it to small map excerpts in order to delineate the contained junctions.

STIM proteins and the endoplasmic reticulum-plasma membrane junctions.

Science.gov (United States)

Carrasco, Silvia; Meyer, Tobias

2011-01-01

Eukaryotic organelles can interact with each other through stable junctions where the two membranes are kept in close apposition. The junction that connects the endoplasmic reticulum to the plasma membrane (ER-PM junction) is unique in providing a direct communication link between the ER and the PM. In a recently discovered signaling process, STIM (stromal-interacting molecule) proteins sense a drop in ER Ca(2+) levels and directly activate Orai PM Ca(2+) channels across the junction space. In an inverse process, a voltage-gated PM Ca(2+) channel can directly open ER ryanodine-receptor Ca(2+) channels in striated-muscle cells. Although ER-PM junctions were first described 50 years ago, their broad importance in Ca(2+) signaling, as well as in the regulation of cholesterol and phosphatidylinositol lipid transfer, has only recently been realized. Here, we discuss research from different fields to provide a broad perspective on the structures and unique roles of ER-PM junctions in controlling signaling and metabolic processes.

Technology developments and first measurements on inverse Low Gain Avalanche Detector (iLGAD) for high energy physics applications

CERN Document Server

Carulla, M.; Fernández-Martínez, P.; IMB-CNM (CSIC); Flores, D.; IMB-CNM (CSIC); González, J.; Hidalgo, S.; Jaramillo, R.; Merlos, A.; Palomo, F.R.; Pellegrini, G; Quirion, D.; Vila, I.

2016-01-01

ABSTRACT: The first Inverse Low Gain Avalanche Detector (iLGAD) have been fabricated at IMB-CNM (CSIC). The iLGAD structure includes the multiplication diffusions at the ohmic contact side while the segmentation is implemented at the front side with multiple P + diffusions. Therefore, iLGAD is P on P position-sensitive detector with a uniform electric field all along the device area that guarantees the same signal amplification wherever a particle passes through the sensitive bulk solving the main draw of the LGAD microstrip detector. However, the detection current is dominated by holes flowing back from the multiplication junction with the subsequent transient current pulse duration increase in comparison with conventional LGAD counterparts. Applications of iLGAD range from tracking and timing applications like determination of primary interaction vertex to medical imaging. The paper addresses the optimization of the iLGAD structure with the aid of TCAD simul...

Morphological variation of the kidney secondary to junctional parenchyma on ultrasound

International Nuclear Information System (INIS)

Lee, Ji Yoon; Park, Byeong Ho; Nam, Kyeong Jin; Choi, Jong Cheol; Koo, Bong Sig; Kim, Jou Yeoun; Ahn, Seung Eon; Lee, Yung Il

1996-01-01

To evaluate the prevalance of morphological variation of the kidney secondary to junctional parenchyma, as well as to analyze the ultrasonographic features of junctional parenchyma. Two hundred and eighty two kidneys of 141 patient without clinical or radiologic evidence of renal disease were prospectively analysed using ultrasound. In all patients, ultrasonograms were obtained in sagittal, coronal and transaxial planes. The kidney was considered to have morphological variation if the ultrasonogram demonstrated junctional parenchymal defect of line ; those showing such variation were classified as one of three types : continuous, discontinuous, or junctional parenchymal line or defect without junctional parenchyma. The prevalance and ultrasonographic features of the kidneys were evaluated. Morphological variation was noted in 71 cases(25%). the continuous type accounted for 54% of these, the discontinuous type for 38%, and junctional parenchymal defect or line without junctional parenchyma for 8%. In all cases, junctional parenchyma was located approximately at the junction of the upper and middle third of the kidney, and had the same echogenecity as the renal cortex. An understanding of the morphological variation of the kidney resulting from junctional renal parenchyma would be helpful in differentiating pseudotumor from true renal neoplasm

Gamma Irradiation Performance Tests of the Bipolar Junction Transistor (BJT) for Medical Dosimetry Purposes

International Nuclear Information System (INIS)

Nazififard, Mohammad; Suh, Kune Y.; Faghihi, Reyhaneh; Norov, Enkhbat

2014-01-01

Two basic radiation damage mechanisms may affect semiconductor devices which are Displacement damage and Ionization damage. In displacement damage mechanism, the incident radiation displaces silicon atoms from their lattice sites. The resulting defects alter the electronic characteristics of the crystal. In ionization damage mechanism, the absorbed energy by electronic ionization in insulating layers liberates charge carriers, which diffuse or drift to other locations where they are trapped, leading to unintended concentrations of charge and, as a consequence, parasitic fields. Both mechanisms are important in detectors, transistors and integrated circuits. Hardly a system is immune to either one phenomenon and most are sensitive to both. This paper investigates the behavior of Bipolar Junction Transistors (BJTs), exposed to radiation in order to establish their applicability in a radiation environment

Gamma Irradiation Performance Tests of the Bipolar Junction Transistor (BJT) for Medical Dosimetry Purposes

Energy Technology Data Exchange (ETDEWEB)

Nazififard, Mohammad; Suh, Kune Y. [PHILOSOPHIA, Inc., Seoul (Korea, Republic of); Faghihi, Reyhaneh [Kashan Univ. of Medical Science, Kashan (Iran, Islamic Republic of); Norov, Enkhbat [POSTECH, Pohang (Korea, Republic of)

2014-05-15

Two basic radiation damage mechanisms may affect semiconductor devices which are Displacement damage and Ionization damage. In displacement damage mechanism, the incident radiation displaces silicon atoms from their lattice sites. The resulting defects alter the electronic characteristics of the crystal. In ionization damage mechanism, the absorbed energy by electronic ionization in insulating layers liberates charge carriers, which diffuse or drift to other locations where they are trapped, leading to unintended concentrations of charge and, as a consequence, parasitic fields. Both mechanisms are important in detectors, transistors and integrated circuits. Hardly a system is immune to either one phenomenon and most are sensitive to both. This paper investigates the behavior of Bipolar Junction Transistors (BJTs), exposed to radiation in order to establish their applicability in a radiation environment.

Visualizing supercurrents in 0-{pi} ferromagnetic Josephson tunnel junctions

Energy Technology Data Exchange (ETDEWEB)

Goldobin, Edward; Guerlich, Christian; Gaber, Tobias; Koelle, Dieter; Kleiner, Reinhold [Physikalisches Institut and Center for Collective Quantum Phenomena, Universitaet Tuebingen (Germany); Weides, Martin; Kohlstedt, Hermann [Institute of Solid State Physics, Reserch Center Juelich (Germany)

2009-07-01

So-called 0 and {pi} Josephson junctions can be treated as having positive and negative critical currents. This implies that the same phase shift applied to a Josephson junction causes counterflow of supercurrents in 0 and in {pi} junctions connected in parallel provided they are short in comparison with Josephson penetration depth {lambda}{sub J}. We have fabricated several 0, {pi}, 0-{pi}, 0-{pi}-0 and 20 x (0-{pi}-) planar superconductor-insulator-ferromagnet-superconductor Josephson junctions and studied the spatial supercurrent density distribution j{sub s}(x,y) across the junction area using low temperature scanning electron microscopy. At zero magnetic field we clearly see counterflow of the supercurrents in 0 and {pi} regions. The picture also changes consistently in the applied magnetic field.

Fabrication of magnetic tunnel junctions with epitaxial and textured ferromagnetic layers

Science.gov (United States)

Chang, Y. Austin; Yang, Jianhua Joshua

2008-11-11

This invention relates to magnetic tunnel junctions and methods for making the magnetic tunnel junctions. The magnetic tunnel junctions include a tunnel barrier oxide layer sandwiched between two ferromagnetic layers both of which are epitaxial or textured with respect to the underlying substrate upon which the magnetic tunnel junctions are grown. The magnetic tunnel junctions provide improved magnetic properties, sharper interfaces and few defects.

Resistivity measurements on the neutron irradiated detector grade silicon materials

Energy Technology Data Exchange (ETDEWEB)

Li, Zheng

1993-11-01

Resistivity measurements under the condition of no or low electrical field (electrical neutral bulk or ENB condition) have been made on various device configurations on detector grade silicon materials after neutron irradiation. Results of the measurements have shown that the ENB resistivity increases with neutron fluence ({Phi}{sub n}) at low {phi}{sub n} (<10{sup 13} n/cm{sup 2}) and saturates at a value between 300 and 400 k{Omega}-cm at {phi}{sub n} {approximately}10{sup 13} n/cm{sup 2}. Meanwhile, the effective doping concentration N{sub eff} in the space charge region (SCR) obtained from the C-V measurements of fully depleted p{sup +}/n silicon junction detectors has been found to increase nearly linearly with {phi}{sub n} at high fluences ({phi}{sub n} > 10{sup 13} n/cm{sup 2}). The experimental results are explained by the deep levels crossing the Fermi level in the SCR and near perfect compensation in the ENB by all deep levels, resulting in N{sub eff} (SCR) {ne} n or p (free carrier concentrations in the ENB).

Spin, Vibrations and Radiation in Superconducting Junctions

NARCIS (Netherlands)

Padurariu, C.

2013-01-01

This thesis presents the theoretical study of superconducting transport in several devices based on superconducting junctions. The important feature of these devices is that the transport properties of the junction are modified by the interaction with another physical system integrated in the

Regulation of Tight Junctions in Upper Airway Epithelium

Directory of Open Access Journals (Sweden)

Takashi Kojima

2013-01-01

Full Text Available The mucosal barrier of the upper respiratory tract including the nasal cavity, which is the first site of exposure to inhaled antigens, plays an important role in host defense in terms of innate immunity and is regulated in large part by tight junctions of epithelial cells. Tight junction molecules are expressed in both M cells and dendritic cells as well as epithelial cells of upper airway. Various antigens are sampled, transported, and released to lymphocytes through the cells in nasal mucosa while they maintain the integrity of the barrier. Expression of tight junction molecules and the barrier function in normal human nasal epithelial cells (HNECs are affected by various stimuli including growth factor, TLR ligand, and cytokine. In addition, epithelial-derived thymic stromal lymphopoietin (TSLP, which is a master switch for allergic inflammatory diseases including allergic rhinitis, enhances the barrier function together with an increase of tight junction molecules in HNECs. Furthermore, respiratory syncytial virus infection in HNECs in vitro induces expression of tight junction molecules and the barrier function together with proinflammatory cytokine release. This paper summarizes the recent progress in our understanding of the regulation of tight junctions in the upper airway epithelium under normal, allergic, and RSV-infected conditions.

Spin-dependent quasiparticle tunneling in junction superconductor-isolator-ferromagnetic

International Nuclear Information System (INIS)

Shlapak, Yu.V.; Shaternik, V.E.; Rudenko, E.M.

2001-01-01

The influence of Andreev reflection of quasiparticles in transparent tunnel junctions of superconductor-isolator-ferromagnetic on electric-current transport is studied within the framework of the Blonder-Tinkham-Klapwijk (BTK) model. It's obtained that current and signal-to-noise ratio can be increased for the memory cell by using in it the double-barrier tunnel junction ferromagnetic-isolator-superconductor-isolator-ferromagnetic instead off the usual tunnel junction ferromagnetic-isolator-ferromagnetic. The evolution of non-linear (tunnel-type) current-voltage characteristics with increasing of the junction transparency is described. (orig.)

Ileocolic junction resection in dogs and cats: 18 cases.

Science.gov (United States)

Fernandez, Yordan; Seth, Mayank; Murgia, Daniela; Puig, Jordi

2017-12-01

There is limited veterinary literature about dogs or cats with ileocolic junction resection and its long-term follow-up. To evaluate the long-term outcome in a cohort of dogs and cats that underwent resection of the ileocolic junction without extensive (≥50%) small or large bowel resection. Medical records of dogs and cats that had the ileocolic junction resected were reviewed. Follow-up information was obtained either by telephone interview or e-mail correspondence with the referring veterinary surgeons. Nine dogs and nine cats were included. The most common cause of ileocolic junction resection was intussusception in dogs (5/9) and neoplasia in cats (6/9). Two dogs with ileocolic junction lymphoma died postoperatively. Only 2 of 15 animals, for which long-term follow-up information was available, had soft stools. However, three dogs with suspected chronic enteropathy required long-term treatment with hypoallergenic diets alone or in combination with medical treatment to avoid the development of diarrhoea. Four of 6 cats with ileocolic junction neoplasia were euthanised as a consequence of progressive disease. Dogs and cats undergoing ileocolic junction resection and surviving the perioperative period may have a good long-term outcome with mild or absent clinical signs but long-term medical management may be required.

Antireflection coating design for series interconnected multi-junction solar cells

International Nuclear Information System (INIS)

Aiken, Daniel J.

1999-01-01

AR coating design for multi-junction solar cells can be more challenging than in the single junction case. Reasons for this are discussed. Analytical expressions used to optimize AR coatings for single junction solar cells are extended for use in monolithic, series interconnected multi-junction solar cell AR coating design. The result is an analytical expression which relates the solar cell performance (through J(sub SC)) directly to the AR coating design through the device reflectance. It is also illustrated how AR coating design can be used to provide an additional degree of freedom for current matching multi-junction devices

Holographic s-wave and p-wave Josephson junction with backreaction

Energy Technology Data Exchange (ETDEWEB)

Wang, Yong-Qiang; Liu, Shuai [Institute of Theoretical Physics, Lanzhou University,Lanzhou 730000, People’s Republic of (China)

2016-11-22

In this paper, we study the holographic models of s-wave and p-wave Josephoson junction away from probe limit in (3+1)-dimensional spacetime, respectively. With the backreaction of the matter, we obtained the anisotropic black hole solution with the condensation of matter fields. We observe that the critical temperature of Josephoson junction decreases with increasing backreaction. In addition to this, the tunneling current and condenstion of Josephoson junction become smaller as backreaction grows larger, but the relationship between current and phase difference still holds for sine function. Moreover, condenstion of Josephoson junction deceases with increasing width of junction exponentially.

Functional anatomy of the human ureterovesical junction

NARCIS (Netherlands)

Roshani, H.; Dabhoiwala, N. F.; Verbeek, F. J.; Lamers, W. H.

1996-01-01

BACKGROUND: The valve function of the ureterovesical-junction (UVJ) is responsible for protection of the low pressure upper urinary tract from the refluxing of urine from the bladder. Controversy about the microanatomy of the human ureterovesical-junction persists. METHODS: Ten (3 male and 7 female)

Double-well potential in annular Josephson junction

International Nuclear Information System (INIS)

Shaju, P.D.; Kuriakose, V.C.

2004-01-01

A double-well potential suitable for quantum-coherent vortex tunnelling can be created in an annular Josephson junction by inserting a microshort in the junction and by applying an in-plane dc magnetic field. Analysis shows that the intensity of the magnetic field determines the depth of the potential well and the strength of the microshort controls the potential barrier height while a dc bias across the junction tilts the potential well. At milli-Kelvin temperatures, the system is expected to behave as a quantum two-level system and may be useful in designing vortex qubits

Parametric frequency conversion in long Josephson junctions

International Nuclear Information System (INIS)

Irie, F.; Ashihara, S.; Yoshida, K.

1976-01-01

Current steps at voltages corresponding to the parametric coupling between an applied r.f. field and junction resonant modes have been observed in long Josephson tunnel junctions in the flux-flow state. The observed periodic variations of the step height due to the applied magnetic field are explained quantitatively by a perturbational analysis using Josephson phase equations. The present study demonstrates that the moving vortex array can serve as a coherent pump wave for signal waves propagating in the barrier region, which indicates, as a result, the possibility of traveling-wave parametric devices with long Josephson tunnel junctions. (author)

Fractional Solitons in Excitonic Josephson Junctions

Science.gov (United States)

Su, Jung-Jung; Hsu, Ya-Fen

The Josephson effect is especially appealing because it reveals macroscopically the quantum order and phase. Here we study this effect in an excitonic Josephson junction: a conjunct of two exciton condensates with a relative phase ϕ0 applied. Such a junction is proposed to take place in the quantum Hall bilayer (QHB) that makes it subtler than in superconductor because of the counterflow of excitonic supercurrent and the interlayer tunneling in QHB. We treat the system theoretically by first mapping it into a pseudospin ferromagnet then describing it by the Landau-Lifshitz-Gilbert equation. In the presence of interlayer tunneling, the excitonic Josephson junction can possess a family of fractional sine-Gordon solitons that resemble the static fractional Josephson vortices in the extended superconducting Josephson junctions. Interestingly, each fractional soliton carries a topological charge Q which is not necessarily a half/full integer but can vary continuously. The resultant current-phase relation (CPR) shows that solitons with Q =ϕ0 / 2 π are the lowest energy states for small ϕ0. When ϕ0 > π , solitons with Q =ϕ0 / 2 π - 1 take place - the polarity of CPR is then switched.

Gravitation at the Josephson Junction

Directory of Open Access Journals (Sweden)

Victor Atanasov

2018-01-01

Full Text Available A geometric potential from the kinetic term of a constrained to a curved hyperplane of space-time quantum superconducting condensate is derived. An energy conservation relation involving the geometric field at every material point in the superconductor is demonstrated. At a Josephson junction the energy conservation relation implies the possibility of transforming electric energy into geometric field energy, that is, curvature of space-time. Experimental procedures to verify that the Josephson junction can act as a voltage-to-curvature converter are discussed.

The cranial-spinal junction in medulloblastoma: does it matter?

International Nuclear Information System (INIS)

Narayana, Ashwatha; Jeswani, Sam; Paulino, Arnold C.

1999-01-01

Purpose: Late effects of treatment in children and young adults with medulloblastoma can be influenced by the technique employed in radiating the craniospinal axis. The purpose of this study is to determine whether the placement of the cranial-spinal junction has an impact on dose to the cervical spinal cord and surrounding organs. Methods and Materials: Five patients underwent computed tomography (CT) simulation in the prone position for craniospinal irradiation. A dose of 36 Gy was prescribed to the entire neuraxis. The doses to the cervical spinal cord and surrounding organs were calculated using a cranial-spinal junction at the C1-C2 vertebral interspace (high junction) or at the lowest point in the neck, with exclusion of the shoulders in the lateral cranial fields (low junction).The volume of critical organs at risk, as well as dose to these structures using the cranial and spinal field(s) were outlined and calculated using the CMS FOCUS 3-dimensional treatment planning system. Results: The average dose to the cervical spinal cord was 11.9% higher than the prescribed dose with the low junction, and 6.7% higher with the high junction. However, doses to the thyroid gland, mandible, pharynx, and larynx were increased by an average of 29.6%, 75.8%, 70.6%, and 227.7%, respectively, by the use of the high junction compared to the low junction. Conclusion: A higher dose to the cervical spinal cord can be minimized by using a high junction. However, this would be at the cost of substantially increased doses to surrounding organs such as the thyroid gland, mandible, pharynx, and larynx. This can be critical in children and young adults, where hypothyroidism, mandibular hypoplasia, and development of second malignancies may be a late sequela of radiation therapy

Chirality effect in disordered graphene ribbon junctions

International Nuclear Information System (INIS)

Long Wen

2012-01-01

We investigate the influence of edge chirality on the electronic transport in clean or disordered graphene ribbon junctions. By using the tight-binding model and the Landauer-Büttiker formalism, the junction conductance is obtained. In the clean sample, the zero-magnetic-field junction conductance is strongly chirality-dependent in both unipolar and bipolar ribbons, whereas the high-magnetic-field conductance is either chirality-independent in the unipolar or chirality-dependent in the bipolar ribbon. Furthermore, we study the disordered sample in the presence of magnetic field and find that the junction conductance is always chirality-insensitive for both unipolar and bipolar ribbons with adequate disorders. In addition, the disorder-induced conductance plateaus can exist in all chiral bipolar ribbons provided the disorder strength is moderate. These results suggest that we can neglect the effect of edge chirality in fabricating electronic devices based on the magnetotransport in a disordered graphene ribbon. (paper)

The fallopian tube-peritoneal junction: a potential site of carcinogenesis.

Science.gov (United States)

Seidman, Jeffrey D; Yemelyanova, Anna; Zaino, Richard J; Kurman, Robert J

2011-01-01

Junctions between different types of epithelia are hot spots for carcinogenesis, but the junction of the peritoneal mesothelium with the fallopian tubal epithelium, the tubal-peritoneal junction, has not been characterized earlier. A total of 613 junctional foci in 228 fallopian tube specimens from 182 patients who underwent surgery for a variety of indications, including 27 risk-reducing salpingo-oophorectomy specimens, were studied. Edema, congestion, and dilated lymphatic channels were commonly present. Transitional metaplasia was found at the junction in 20% of patients and mesothelial hyperplasia in 17%. Inflammation at the junction was seen predominantly in patients with salpingitis, torsion, or tubal pregnancy. Ovarian-type stroma was found at the junction in 5% of patients, and was found elsewhere in the tubal lamina propria in an additional 27% of patients. Findings in risk-reducing salpingo-oophorectomy specimens in women with BRCA mutations, a personal history of breast cancer, and/or a family history of breast/ovarian cancer were similar to those in controls. Transitional metaplasia specifically localizes to this junction, and is the probable source of Walthard cell nests. The recently highlighted significance of fimbrial tubal epithelium in the origin of serous ovarian carcinomas and a study suggesting that mucinous and Brenner tumors may arise from transitional-type epithelium in this location suggest that the tubal-peritoneal junction may play a role in the development of these tumors. This is the first comprehensive description of a hitherto unrecognized transitional zone in the adnexa.

Large, real time detectors for solar neutrinos and magnetic monopoles

International Nuclear Information System (INIS)

Gonzalez-Mestres, L.

1990-01-01

We discuss the present status of superheated superconducting granules (SSG) development for the real time detection of magnetic monopoles of any speed and of low energy solar neutrinos down to the pp region (indium project). Basic properties of SSG and progress made in the recent years are briefly reviewed. Possible ways for further improvement are discussed. The performances reached in ultrasonic grain production at ∼ 100 μm size, as well as in conventional read-out electronics, look particularly promising for a large scale monopole experiment. Alternative approaches are briefly dealt with: induction loops for magnetic monopoles; scintillators, semiconductors or superconducting tunnel junctions for a solar neutrino detector based on an indium target

Regulation of Endothelial Adherens Junctions by Tyrosine Phosphorylation

Science.gov (United States)

Adam, Alejandro Pablo

2015-01-01

Endothelial cells form a semipermeable, regulated barrier that limits the passage of fluid, small molecules, and leukocytes between the bloodstream and the surrounding tissues. The adherens junction, a major mechanism of intercellular adhesion, is comprised of transmembrane cadherins forming homotypic interactions between adjacent cells and associated cytoplasmic catenins linking the cadherins to the cytoskeleton. Inflammatory conditions promote the disassembly of the adherens junction and a loss of intercellular adhesion, creating openings or gaps in the endothelium through which small molecules diffuse and leukocytes transmigrate. Tyrosine kinase signaling has emerged as a central regulator of the inflammatory response, partly through direct phosphorylation and dephosphorylation of the adherens junction components. This review discusses the findings that support and those that argue against a direct effect of cadherin and catenin phosphorylation in the disassembly of the adherens junction. Recent findings indicate a complex interaction between kinases, phosphatases, and the adherens junction components that allow a fine regulation of the endothelial permeability to small molecules, leukocyte migration, and barrier resealing. PMID:26556953

Two-dimensional non-volatile programmable p-n junctions

Science.gov (United States)

Li, Dong; Chen, Mingyuan; Sun, Zhengzong; Yu, Peng; Liu, Zheng; Ajayan, Pulickel M.; Zhang, Zengxing

2017-09-01

Semiconductor p-n junctions are the elementary building blocks of most electronic and optoelectronic devices. The need for their miniaturization has fuelled the rapid growth of interest in two-dimensional (2D) materials. However, the performance of a p-n junction considerably degrades as its thickness approaches a few nanometres and traditional technologies, such as doping and implantation, become invalid at the nanoscale. Here we report stable non-volatile programmable p-n junctions fabricated from the vertically stacked all-2D semiconductor/insulator/metal layers (WSe2/hexagonal boron nitride/graphene) in a semifloating gate field-effect transistor configuration. The junction exhibits a good rectifying behaviour with a rectification ratio of 104 and photovoltaic properties with a power conversion efficiency up to 4.1% under a 6.8 nW light. Based on the non-volatile programmable properties controlled by gate voltages, the 2D p-n junctions have been exploited for various electronic and optoelectronic applications, such as memories, photovoltaics, logic rectifiers and logic optoelectronic circuits.

Thermionic refrigeration at CNT-CNT junctions

Science.gov (United States)

Li, C.; Pipe, K. P.

2016-10-01

Monte Carlo (MC) simulation is used to study carrier energy relaxation following thermionic emission at the junction of two van der Waals bonded single-walled carbon nanotubes (SWCNTs). An energy-dependent transmission probability gives rise to energy filtering at the junction, which is predicted to increase the average electron transport energy by as much as 0.115 eV, leading to an effective Seebeck coefficient of 386 μV/K. MC results predict a long energy relaxation length (˜8 μm) for hot electrons crossing the junction into the barrier SWCNT. For SWCNTs of optimal length, an analytical transport model is used to show that thermionic cooling can outweigh parasitic heat conduction due to high SWCNT thermal conductivity, leading to a significant cooling capacity (2.4 × 106 W/cm2).

Detector simulation needs for detector designers

International Nuclear Information System (INIS)

Hanson, G.G.

1987-11-01

Computer simulation of the components of SSC detectors and of the complete detectors will be very important for the designs of the detectors. The ratio of events from interesting physics to events from background processes is very low, so detailed understanding of detector response to the backgrounds is needed. Any large detector for the SSC will be very complex and expensive and every effort must be made to design detectors which will have excellent performance and will not have to undergo major rebuilding. Some areas in which computer simulation is particularly needed are pattern recognition in tracking detectors and development of shower simulation code which can be trusted as an aid in the design and optimization of calorimeters, including their electron identification performance. Existing codes require too much computer time to be practical and need to be compared with test beam data at energies of several hundred GeV. Computer simulation of the processing of the data, including electronics response to the signals from the detector components, processing of the data by microprocessors on the detector, the trigger, and data acquisition will be required. In this report we discuss the detector simulation needs for detector designers

‘Gap Junctions and Cancer: Communicating for 50 Years’

Science.gov (United States)

Aasen, Trond; Mesnil, Marc; Naus, Christian C.; Lampe, Paul D.; Laird, Dale W.

2017-01-01

Fifty years ago, tumour cells were found to lack electrical coupling, leading to the hypothesis that loss of direct intercellular communication is commonly associated with cancer onset and progression. Subsequent studies linked this phenomenon to gap junctions composed of connexin proteins. While many studies support the notion that connexins are tumour suppressors, recent evidence suggests that, in some tumour types, they may facilitate specific stages of tumour progression through both junctional and non-junctional signalling pathways. This Timeline article highlights the milestones connecting gap junctions to cancer, and underscores important unanswered questions, controversies and therapeutic opportunities in the field. PMID:27782134

Dynamics of fractional vortices in long Josephson junctions

International Nuclear Information System (INIS)

Gaber, Tobias

2007-01-01

In this thesis static and dynamic properties of fractional vortices in long Josephson junctions are investigated. Fractional vortices are circulating supercurrents similar to the well-known Josephson fluxons. Yet, they show the distinguishing property of carrying only a fraction of the magnetic flux quantum. Fractional vortices are interesting non-linear objects. They spontaneously appear and are pinned at the phase discontinuity points of so called 0-κ junctions but can be bend or flipped by external forces like bias currents or magnetic fields. 0-κ junctions and fractional vortices are generalizations of the well-known 0-π junctions and semifluxons, where not only phase jumps of pi but arbitrary values denoted by kappa are considered. By using so-called artificial 0-κ junctions that are based on standard Nb-AlO x -Nb technology the classical dynamics of fractional vortices has been investigated experimentally for the very first time. Here, half-integer zero field steps could be observed. These voltage steps on the junction's current-voltage characteristics correspond to the periodic flipping/hopping of fractional vortices. In addition, the oscillatory eigenmodes of fractional vortices were investigated. In contrast to fluxons fractional vortices have an oscillatory eigenmode with a frequency within the plasma gap. Using resonance spectroscopy the dependence of the eigenmode frequency on the flux carried by the vortex and an applied bias current was determined. (orig.)

Functional Molecular Junctions Derived from Double Self-Assembled Monolayers.

Science.gov (United States)

Seo, Sohyeon; Hwang, Eunhee; Cho, Yunhee; Lee, Junghyun; Lee, Hyoyoung

2017-09-25

Information processing using molecular junctions is becoming more important as devices are miniaturized to the nanoscale. Herein, we report functional molecular junctions derived from double self-assembled monolayers (SAMs) intercalated between soft graphene electrodes. Newly assembled molecular junctions are fabricated by placing a molecular SAM/(top) electrode on another molecular SAM/(bottom) electrode by using a contact-assembly technique. Double SAMs can provide tunneling conjugation across the van der Waals gap between the terminals of each monolayer and exhibit new electrical functions. Robust contact-assembled molecular junctions can act as platforms for the development of equivalent contact molecular junctions between top and bottom electrodes, which can be applied independently to different kinds of molecules to enhance either the structural complexity or the assembly properties of molecules. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

Gap junctions-guards of excitability

DEFF Research Database (Denmark)

Stroemlund, Line Waring; Jensen, Christa Funch; Qvortrup, Klaus

2015-01-01

Cardiomyocytes are connected by mechanical and electrical junctions located at the intercalated discs (IDs). Although these structures have long been known, it is becoming increasingly clear that their components interact. This review describes the involvement of the ID in electrical disturbances...... of the heart and focuses on the role of the gap junctional protein connexin 43 (Cx43). Current evidence shows that Cx43 plays a crucial role in organizing microtubules at the intercalated disc and thereby regulating the trafficking of the cardiac sodium channel NaV1.5 to the membrane....

Association of visceral adiposity with oesophageal and junctional adenocarcinomas.

LENUS (Irish Health Repository)

Beddy, P

2012-02-01

BACKGROUND: Obesity is associated with an increased incidence of oesophageal and oesophagogastric junction adenocarcinoma, in particular Siewert types I and II. This study compared abdominal fat composition in patients with oesophageal\\/junctional adenocarcinoma with that in patients with oesophageal squamous cell carcinoma and gastric adenocarcinoma, and in controls. METHOD: In total, 194 patients (110 with oesophageal\\/junctional adenocarcinoma, 38 with gastric adenocarcinoma and 46 with oesophageal squamous cell carcinoma) and 90 matched control subjects were recruited. The abdominal fat area was assessed using computed tomography (CT), and the total fat area (TFA), visceral fat area (VFA) and subcutaneous fat area (SFA) were calculated. RESULTS: Patients with oesophageal\\/junctional adenocarcinoma had significantly higher TFA and VFA values compared with controls (both P < 0.001), patients with gastric adenocarcinoma (P = 0.013 and P = 0.006 respectively) and patients with oesophageal squamous cell carcinoma (both P < 0.001). For junctional tumours, the highest TFA and VFA values were seen in patients with Siewert type I tumours (respectively P = 0.041 and P = 0.033 versus type III; P = 0.332 and P = 0.152 versus type II). CONCLUSION: Patients with oesophageal\\/junctional adenocarcinoma, in particular oesophageal and Siewert type I junctional tumours, have greater CT-defined visceral adiposity than patients with gastric adenocarcinoma or oesophageal squamous cell carcinoma, or controls.

Molecular characterisation and prevalence of a new genotype of Cyprinid herpesvirus 2 in mainland China.

Science.gov (United States)

Li, Lijuan; Luo, Yangzhi; Gao, Zexia; Huang, Jian; Zheng, Xianghai; Nie, Huihui; Zhang, Junmei; Lin, Li; Yuan, Junfa

2015-06-01

Cyprinid herpesvirus 2 (CyHV-2, species Cyprinid herpesvirus 2) has been confirmed as a causative agent of the acute haematopoietic necrosis disease outbreak in farmed goldfish (Carassius auratus L.) and gibel carp (Carassius auratus gibelio Bloch). In this study, we present the genomic characteristics of a variant CyHV-2 strain (SY-C1) isolated from farmed gibel carp in mainland China and its comparative genomics analysis with the CyHV-2 reference strain ST-J1. Overall, the full-length genome of SY-C1 shares 98.8% homology with that of ST-J1. Sequence comparisons between SY-C1 and ST-J1 indicate that the variations include single-nucleotide mutations, insertions, deletions, and rearrangements, which suggested that SY-C1 is different from ST-J1 and represents a new genotype. Therefore, we propose that the identified CyHV-2 can be divided into 2 different genotypes and be named China genotype (C genotype) and Japan genotype (J genotype) according to their isolation loci. Furthermore, epidemiological surveys indicate that the dominant genotype of CyHV-2 circulating in mainland China is closer to the China genotype than the Japan genotype.

Magnetic interaction between spatially extended superconducting tunnel junctions

DEFF Research Database (Denmark)

Grønbech-Jensen, Niels; Samuelsen, Mogens Rugholm

2002-01-01

A general description of magnetic interactions between superconducting tunnel junctions is given. The description covers a wide range of possible experimental systems, and we explicitly explore two experimentally relevant limits of coupled junctions. One is the limit of junctions with tunneling...... been considered through arrays of superconducting weak links based on semiconductor quantum wells with superconducting electrodes. We use the model to make direct interpretations of the published experiments and thereby propose that long-range magnetic interactions are responsible for the reported...

Cavity syncronisation of underdamped Josephson junction arrays

DEFF Research Database (Denmark)

Barbara, P.; Filatrella, G.; Lobb, C.

2003-01-01

the junctions in the array and an electromagnetic cavity. Here we show that a model of a one-dimensional array of Josephson junctions coupled to a resonator can produce many features of the coherent be havior above threshold, including coherent radiation of power and the shape of the array current...

impairs gap junction function causing congenital cataract

Indian Academy of Sciences (India)

Navya

2017-03-24

Mar 24, 2017 ... experiment showed a lower dye diffusion distance of Cx46 V44M cells, ... Studies of connexins show that channel gating and permeability .... have found that connexin assembled into gap junction plaques is not soluble in 1% ..... high glucose reduces gap junction activity in microvascular endothelial cells.

Studies of frequency dependent C-V characteristics of neutron irradiated p+-n silicon detectors

International Nuclear Information System (INIS)

Li, Zheng; Kraner, H.W.

1990-10-01

Frequency-dependent capacitance-voltage fluence (C-V) characteristics of neutron irradiated high resistivity silicon p + -n detectors have been observed up to a fluence of 8.0 x 10 12 n/cm 2 . It has been found that frequency dependence of the deviation of the C-V characteristic (from its normal V -1/2 dependence), is strongly dependent on the ratio of the defect density and the effective doping density N t /N' d . As the defect density approaches the effective dopant density, or N t /N' d → 1, the junction capacitance eventually assumes the value of the detector geometry capacitance at high frequencies (f ≤ 10 5 Hz), independent of voltage. A two-trap-level model using the concept of quasi-fermi levels has been developed, which predicts both the effects of C-V frequency dependence and dopant compensation observed in this study

Two coupled Josephson junctions: dc voltage controlled by biharmonic current

International Nuclear Information System (INIS)

Machura, L; Spiechowicz, J; Kostur, M; Łuczka, J

2012-01-01

We study transport properties of two Josephson junctions coupled by an external shunt resistance. One of the junctions (say, the first) is driven by an unbiased ac current consisting of two harmonics. The device can rectify the ac current yielding a dc voltage across the first junction. For some values of coupling strength, controlled by an external shunt resistance, a dc voltage across the second junction can be generated. By variation of system parameters such as the relative phase or frequency of two harmonics, one can conveniently manipulate both voltages with high efficiency, e.g. changing the dc voltages across the first and second junctions from positive to negative values and vice versa. (paper)

Probing electrical transport in individual carbon nanotubes and junctions

International Nuclear Information System (INIS)

Kim, Tae-Hwan; Wendelken, John F; Li Anping; Du Gaohui; Li Wenzhi

2008-01-01

The electrical transport properties of individual carbon nanotubes (CNTs) and multi-terminal junctions of CNTs are investigated with a quadraprobe scanning tunneling microscope. The CNTs used in this study are made of stacked herringbone-type conical graphite sheets with a cone angle of ∼20 deg. to the tube axis, and the CNT junctions have no catalytic particles in the junction areas. The CNTs have a significantly higher resistivity than conventional CNTs with concentric walls. The straight CNTs display linear current-voltage (I-V) characteristics, indicating diffusive transport rather than ballistic transport. The structural deformation in CNTs with bends substantially increases the resistivity in comparison with that for the straight segments on the same CNTs, and the I-V curve departs slightly from linearity in curved segments. The junction area of the CNT junctions behaves like an ohmic-type scattering center with linear I-V characteristics. In addition, a gating effect has not been observed, in contrast to the case for conventional multi-walled CNT junctions. These unusual transport properties can be attributed to the enhanced inter-layer interaction in the herringbone-type CNTs.

impairs gap junction function causing congenital cataract

Indian Academy of Sciences (India)

LIJUAN CHEN

2017-12-20

Dec 20, 2017 ... showed a lower dye diffusion distance of Cx46 V44M cells, which indicates that the gap junction intercellular ... permeability could be affected by alterations of charged residues of .... bled into gap junction plaques is not soluble in 1% Triton ..... regulation of connexin 43 expression by high glucose reduces.

Fast temporal fluctuations in single-molecule junctions.

Science.gov (United States)

Ochs, Roif; Secker, Daniel; Elbing, Mark; Mayor, Marcel; Weber, Heiko B

2006-01-01

The noise within the electrical current through single-molecule junctions is studied cryogenic temperature. The organic sample molecules were contacted with the mechanically controlled break-junction technique. The noise spectra refer to a where only few Lorentzian fluctuators occur in the conductance. The frequency dependence shows qualitative variations from sample to sample.

Axial p-n-junctions in nanowires.

Science.gov (United States)

Fernandes, C; Shik, A; Byrne, K; Lynall, D; Blumin, M; Saveliev, I; Ruda, H E

2015-02-27

The charge distribution and potential profile of p-n-junctions in thin semiconductor nanowires (NWs) were analyzed. The characteristics of screening in one-dimensional systems result in a specific profile with large electric field at the boundary between the n- and p- regions, and long tails with a logarithmic drop in the potential and charge density. As a result of these tails, the junction properties depend sensitively on the geometry of external contacts and its capacity has an anomalously large value and frequency dispersion. In the presence of an external voltage, electrons and holes in the NWs can not be described by constant quasi-Fermi levels, due to small values of the average electric field, mobility, and lifetime of carriers. Thus, instead of the classical Sah-Noice-Shockley theory, the junction current-voltage characteristic was described by an alternative theory suitable for fast generation-recombination and slow diffusion-drift processes. For the non-uniform electric field in the junction, this theory predicts the forward branch of the characteristic to have a non-ideality factor η several times larger than the values 1 < η < 2 from classical theory. Such values of η have been experimentally observed by a number of researchers, as well as in the present work.

Macroscopic Refrigeration Using Superconducting Tunnel Junctions

Science.gov (United States)

Lowell, Peter; O'Neil, Galen; Underwood, Jason; Zhang, Xiaohang; Ullom, Joel

2014-03-01

Sub-kelvin temperatures are often a prerequisite for modern scientific experiments, such as quantum information processing, astrophysical missions looking for dark energy signatures and tabletop time resolved x-ray spectroscopy. Existing methods of reaching these temperatures, such as dilution refrigerators, are bulky and costly. In order to increase the accessibility of sub-Kelvin temperatures, we have developed a new method of refrigeration using normal-metal/insulator/superconductor (NIS) tunnel junctions. NIS junctions cool the electrons in the normal metal since the hottest electrons selectively tunnel from the normal metal into the superconductor. By extending the normal metal onto a thermally isolated membrane, the cold electrons can cool the phonons through the electron-phonon coupling. When these junctions are combined with a pumped 3He system, they provide a potentially inexpensive method of reaching these temperatures. Using only three devices, each with a junction area of approximately 3,500 μm2, we have cooled a 2 cm3 Cu plate from 290 mK to 256 mK. We will present these experimental results along with recent modeling predictions that strongly suggest that further refinements will allow cooling from 300 mK to 120 mK. This work is supported by the NASA APRA program.

No junctional communication between epithelial cells in hydra

DEFF Research Database (Denmark)

de Laat, S W; Tertoolen, L G; Grimmelikhuijzen, C J

1980-01-01

junctions between epithelial cells of hydra. However, until now, there has been no report published on whether these junctions enable the epithelial cells to exchange molecules of small molecular weight, as has been described in other organisms. Therefore we decided to investigate the communicative...... properties of the junctional membranes by electrophysiological methods and by intracellular-dye iontophoresis. We report here that no electrotonic coupling is detectable between epithelial cells of Hydra attenuata in: (1) intact animals, (2) head-regenerating animals, (3) cell re-aggregates, and (4) hydra...

Spectrum of resonant plasma oscillations in long Josephson junctions

International Nuclear Information System (INIS)

Holst, T.

1996-01-01

An analysis is presented for the amplitude of the plasma oscillations in the zero-voltage state of a long and narrow Josephson tunnel junction. The calculation is valid for arbitrary normalized junction length and arbitrary bias current. The spectrum of the plasma resonance is found numerically as solutions to an analytical equation. The low-frequency part of the spectrum contains a single resonance, which is known to exist also in the limit of a short and narrow junction. Above a certain cutoff frequency, a series of high-frequency standing wave plasma resonances is excited, a special feature of long Josephson junctions. copyright 1996 The American Physical Society

Niobium nitride Josephson tunnel junctions with magnesium oxide barriers

International Nuclear Information System (INIS)

Shoji, A.; Aoyagi, M.; Kosaka, S.; Shinoki, F.; Hayakawa, H.

1985-01-01

Niobium nitride-niobium nitride Josephson tunnel junctions have been fabricated using amorphous magnesium oxide (a-MgO) films as barriers. These junctions have excellent tunneling characteristics. For example, a large gap voltage (V/sub g/ = 5.1 mV), a large product of the maximum critical current and the normal tunneling resistance (I/sub c/R/sub n/ = 3.25 mV), and a small subgap leakage current (V/sub m/ = 45 mV, measured at 3 mV) have been obtained for a NbN/a-MgO/NbN junction. The critical current of this junction remains finite up to 14.5 K

Squeezed States in Josephson Junctions.

Science.gov (United States)

Hu, X.; Nori, F.

1996-03-01

We have studied quantum fluctuation properties of Josephson junctions in the limit of large Josephson coupling energy and small charging energy, when the eigenstates of the system can be treated as being nearly localized. We have considered(X. Hu and F. Nori, preprints.) a Josephson junction in a variety of situations, e.g., coupled to one or several of the following elements: a capacitor, an inductor (in a superconducting ring), and an applied current source. By solving an effective Shrödinger equation, we have obtained squeezed vacuum (coherent) states as the ground states of a ``free-oscillating'' (linearly-driven) Josephson junction, and calculated the uncertainties of its canonical momentum, charge, and coordinate, phase. We have also shown that the excited states of the various systems we consider are similar to the number states of a simple harmonic oscillator but with different fluctuation properties. Furthermore, we have obtained the time-evolution operators for these systems. These operators can make it easier to calculate the time-dependence of the expectation values and fluctuations of various quantities starting from an arbitrary initial state.

Molecular anatomy of interendothelial junctions in human blood-brain barrier microvessels.

Directory of Open Access Journals (Sweden)

Andrzej W Vorbrodt

2004-07-01

Full Text Available Immunogold cytochemical procedure was used to study the localization at the ultrastructural level of interendothelial junction-associated protein molecules in the human brain blood microvessels, representing the anatomic site of the blood-brain barrier (BBB. Ultrathin sections of Lowicryl K4M-embedded biopsy specimens of human cerebral cortex obtained during surgical procedures were exposed to specific antibodies, followed by colloidal gold-labeled secondary antibodies. All tight junction-specific integral membrane (transmembrane proteins--occludin, junctional adhesion molecule (JAM-1, and claudin-5--as well as peripheral zonula occludens protein (ZO-1 were highly expressed. Immunoreactivity of the adherens junction-specific transmembrane protein VE-cadherin was of almost similar intensity. Immunolabeling of the adherens junction-associated peripheral proteins--alpha-catenin, beta-catenin, and p120 catenin--although positive, was evidently less intense. The expression of gamma-catenin (plakoglobin was considered questionable because solitary immunosignals (gold particles appeared in only a few microvascular profiles. Double labeling of some sections made possible to observe strict colocalization of the junctional molecules, such as occludin and ZO-1 or JAM-1 and VE-cadherin, in the interendothelial junctions. We found that in human brain microvessels, the interendothelial junctional complexes contain molecular components specific for both tight and adherens junctions. It is assumed that the data obtained can help us find the immunodetectable junctional molecules that can serve as sensitive markers of normal or abnormal function of the BBB.

Phase-dependent noise in Josephson junctions

Science.gov (United States)

Sheldon, Forrest; Peotta, Sebastiano; Di Ventra, Massimiliano

2018-03-01

In addition to the usual superconducting current, Josephson junctions (JJs) support a phase-dependent conductance related to the retardation effect of tunneling quasi-particles. This introduces a dissipative current with a memory-resistive (memristive) character that should also affect the current noise. By means of the microscopic theory of tunnel junctions we compute the complete current autocorrelation function of a Josephson tunnel junction and show that this memristive component gives rise to both a previously noted phase-dependent thermal noise, and an undescribed non-stationary, phase-dependent dynamic noise. As experiments are approaching ranges in which these effects may be observed, we examine the form and magnitude of these processes. Their phase dependence can be realized experimentally as a hysteresis effect and may be used to probe defects present in JJ based qubits and in other superconducting electronics applications.

Electrical analog of a Josephson junction

International Nuclear Information System (INIS)

Goldman, A.M.

1979-01-01

It is noted that a mathematical description of the phase-coupling of two oscillators synchronized by a phase-lock-loop under the influence of thermal white noise is analogous to that of the phase coupling of two superconductors in a Josephson junction also under the influence of noise. This analogy may be useful in studying threshold instabilities of the Josephson junction in regimes not restricted to the case of large damping. This is of interest because the behavior of the mean voltage near the threshold current can be characterized by critical exponents which resemble those exhibited by an order parameter of a continuous phase transition. As it is possible to couple a collection of oscillators together in a chain, the oscillator analogy may also be useful in exploring the dynamics and statistical mechanics of coupled junctions

Neutron irradiation effects on silicon detectors structure, electrical and mechanical characteristics

International Nuclear Information System (INIS)

Rabinovich, E.; Golan, G.; Axelevich, A.; Inberg, A.; Oksman, M.; Rosenwaks, I.; Lubarsky, G.; Seidman, A.; Croitoru, N.; Rancoita, P.G.; Rattaggi, M.

1999-01-01

Neutron irradiation effects on (p-n) and Schottky-junction silicon detectors were studied. It was shown that neutron interactions with monocrystalline silicon create specific types of microstructure defects with morphology differing according to the level of neutron fluences (Φ). The isolated dislocation loops, formed by interstitial atoms were observed in microstructure images for 10 10 ≤ Φ ≤ 10 12 n/cm 2 . A strong change in the dislocation loops density and a cluster formation was observed for Φ ≥ 10 13 n/cm 2 . A drastic silicon damage was found for fluences over 10 14 n/cm 2 . These fluences created zones enriched with all types of dislocations, covering more than 50 % of the total surface area. A mechanical fragility appeared in that fluence range in a form of microcracks. 10 14 n/cm 2 appears to be a critical value of neutron irradiation because of the radiation damage described above and because the characteristics I f -V f of silicon detectors can be differentiated from those obtained at low fluences. (A.C.)

Several alternative approaches to the manufacturing of HTS Josephson junctions

OpenAIRE

Villegier , J.; Boucher , H.; Ghis , A.; Levis , M.; Méchin , Laurence; Moriceau , H.; Pourtier , F.; Vabre , M.; Nicoletti , S.; Correra , L.

1994-01-01

In this work we describe comparatively the fabrication and the characterization of various types of HTS Josephson junctions manufactured using different processes : grain boundary junctions have been studied both by the way of junctions on bicrystal substrates and of bi-epitaxial junctions. Ramp-edge types have been elaborated and characterized using mainly N-YBaCuO thin film as a barrier while the trilayer approach has been investigated through a-axis structures. YBaCuO or GdBaCuO supercondu...

The role of Rap1 in cell-cell junction formation

NARCIS (Netherlands)

Kooistra, M.R.H.

2008-01-01

Both epithelial and endothelial cells form cell-cell junctions at the cell-cell contacts to maintain tissue integrity. Proper regulation of cell-cell junctions is required for the organisation of the tissue and to prevent leakage of blood vessels. In endothelial cells, the cell-cell junctions are

What happens in Josephson junctions at high critical current densities

Science.gov (United States)

Massarotti, D.; Stornaiuolo, D.; Lucignano, P.; Caruso, R.; Galletti, L.; Montemurro, D.; Jouault, B.; Campagnano, G.; Arani, H. F.; Longobardi, L.; Parlato, L.; Pepe, G. P.; Rotoli, G.; Tagliacozzo, A.; Lombardi, F.; Tafuri, F.

2017-07-01

The impressive advances in material science and nanotechnology are more and more promoting the use of exotic barriers and/or superconductors, thus paving the way to new families of Josephson junctions. Semiconducting, ferromagnetic, topological insulator and graphene barriers are leading to unconventional and anomalous aspects of the Josephson coupling, which might be useful to respond to some issues on key problems of solid state physics. However, the complexity of the layout and of the competing physical processes occurring in the junctions is posing novel questions on the interpretation of their phenomenology. We classify some significant behaviors of hybrid and unconventional junctions in terms of their first imprinting, i.e., current-voltage curves, and propose a phenomenological approach to describe some features of junctions characterized by relatively high critical current densities Jc. Accurate arguments on the distribution of switching currents will provide quantitative criteria to understand physical processes occurring in high-Jc junctions. These notions are universal and apply to all kinds of junctions.

An ion-beam-assisted process for high-Tc Josephson junctions

International Nuclear Information System (INIS)

Huang, M.Q.; Chen, L.; Zhao, Z.X.; Yang, T.; Nie, J.C.; Wu, P.J.; Xiong, X.M.

1997-01-01

We have developed a non-ion-etching ion-beam-assisted-deposition (IBAD) process for fabricating high critical-temperature (T c ) grain boundary Josephson junctions through a photoresist liftoff mask. The YBa 2 Cu 3 O 7 (YBCO) junctions fabricated through this process exhibited the resistively-shunted-junction (RSJ)-like I - V characteristics. The well-defined Shapiro steps have been seen on the I - V curves under microwave radiation. The magnetic modulation of critical current of a 4 μm width YBCO junction tallied with the prior simulated Fraunhofer diffraction pattern of a Josephson junction with a spatially homogeneous critical current density. The maximum peak-to-peak modulation voltage across the dc superconducting quantum interference device (SQUID) fabricated by using these junctions reached up to 32 μV at 77 K. The magnetic modulation of the SQUID exhibited periodic behavior with the observed modulation period of 5.0x10 -4 G. copyright 1997 American Institute of Physics

Au nanowire junction breakup through surface atom diffusion

Science.gov (United States)

Vigonski, Simon; Jansson, Ville; Vlassov, Sergei; Polyakov, Boris; Baibuz, Ekaterina; Oras, Sven; Aabloo, Alvo; Djurabekova, Flyura; Zadin, Vahur

2018-01-01

Metallic nanowires are known to break into shorter fragments due to the Rayleigh instability mechanism. This process is strongly accelerated at elevated temperatures and can completely hinder the functioning of nanowire-based devices like e.g. transparent conductive and flexible coatings. At the same time, arranged gold nanodots have important applications in electrochemical sensors. In this paper we perform a series of annealing experiments of gold and silver nanowires and nanowire junctions at fixed temperatures 473, 673, 873 and 973 K (200 °C, 400 °C, 600 °C and 700 °C) during a time period of 10 min. We show that nanowires are especially prone to fragmentation around junctions and crossing points even at comparatively low temperatures. The fragmentation process is highly temperature dependent and the junction region breaks up at a lower temperature than a single nanowire. We develop a gold parametrization for kinetic Monte Carlo simulations and demonstrate the surface diffusion origin of the nanowire junction fragmentation. We show that nanowire fragmentation starts at the junctions with high reliability and propose that aligning nanowires in a regular grid could be used as a technique for fabricating arrays of nanodots.

Flicker (1/f) noise in tunnel junction DC SQUIDS

International Nuclear Information System (INIS)

Koch, R.H.; Clarke, J.; Goubau, W.M.; Martinis, J.M.; Pegrum, C.M.; Van Harlingen, D.J.

1983-01-01

We have measured the spectral density of the 1/f voltage noise in current-biased resistively shunted Josephson tunnel junctions and dc SQUIDs. A theory in which fluctuations in the temperature give rise to fluctuations in the critical current and hence in the voltage predicts the magnitude of the noise quite accurately for junctions with areas of about 2 x 10 4 μm 2 , but significantly overestimates the noise for junctions with areas of about 6 μm 2 . DC SQUIDs fabricated from these two types of junctions exhibit substantially more 1/f voltage noise than would be predicted from a model in which the noise arises from critical current fluctuations in the junctions. This result was confirmed by an experiment involving two different bias current and flux modulation schemes, which demonstrated that the predominant 1/f voltage noise arises not from critical current fluctuations, but from some unknown source that can be regarded as an apparent 1/f flux noise. Measurements on five different configurations of dc SQUIDs fabricated with thin-film tunnel junctions and with widely varying areas, inductances, and junction capacitances show that the spectral density of the 1/f equivalent flux noise is roughtly constant, within a factor of three of (10 -10 /f)phi 2 0 Hz -1 . It is emphasized that 1/f flux noise may not be the predominant source of 1/f noise in SQUIDS fabricated with other technologies

Many-junction photovoltaic device performance under non-uniform high-concentration illumination

Science.gov (United States)

Valdivia, Christopher E.; Wilkins, Matthew M.; Chahal, Sanmeet S.; Proulx, Francine; Provost, Philippe-Olivier; Masson, Denis P.; Fafard, Simon; Hinzer, Karin

2017-09-01

A parameterized 3D distributed circuit model was developed to calculate the performance of III-V solar cells and photonic power converters (PPC) with a variable number of epitaxial vertically-stacked pn junctions. PPC devices are designed with many pn junctions to realize higher voltages and to operate under non-uniform illumination profiles from a laser or LED. Performance impacts of non-uniform illumination were greatly reduced with increasing number of junctions, with simulations comparing PPC devices with 3 to 20 junctions. Experimental results using Azastra Opto's 12- and 20-junction PPC illuminated by an 845 nm diode laser show high performance even with a small gap between the PPC and optical fiber output, until the local tunnel junction limit is reached.

Josephson junctions array resonators

Energy Technology Data Exchange (ETDEWEB)

Gargiulo, Oscar; Muppalla, Phani; Mirzaei, Iman; Kirchmair, Gerhard [Institute for Quantum Optics and Quantum Information, Innsbruck (Austria)

2016-07-01

We present an experimental analysis of the self- and cross-Kerr effect of extended plasma resonances in Josephson junction chains. The chain consists of 1600 individual junctions and we can measure quality factors in excess of 10000. The Kerr effect manifests itself as a frequency shift that depends linearly on the number of photons in a resonant mode. By changing the input power we are able to measure this frequency shift on a single mode (self-kerr). By changing the input power on another mode while measuring the same one, we are able to evaluate the cross-kerr effect. We can measure the cross-Kerr effect by probing the resonance frequency of one mode while exciting another mode of the array with a microwave drive.

Doping enhanced barrier lowering in graphene-silicon junctions

Science.gov (United States)

Zhang, Xintong; Zhang, Lining; Chan, Mansun

2016-06-01

Rectifying properties of graphene-semiconductor junctions depend on the Schottky barrier height. We report an enhanced barrier lowering in graphene-Si junction and its essential doping dependence in this paper. The electric field due to ionized charge in n-type Si induces the same type doping in graphene and contributes another Schottky barrier lowering factor on top of the image-force-induced lowering (IFIL). We confirm this graphene-doping-induced lowering (GDIL) based on well reproductions of the measured reverse current of our fabricated graphene-Si junctions by the thermionic emission theory. Excellent matching between the theoretical predictions and the junction data of the doping-concentration dependent barrier lowering serves as another evidence of the GDIL. While both GDIL and IFIL are enhanced with the Si doping, GDIL exceeds IFIL with a threshold doping depending on the as-prepared graphene itself.

Magnetic properties of slablike Josephson-junction arrays

International Nuclear Information System (INIS)

Chen, D.; Sanchez, A.; Hernando, A.

1994-01-01

Magnetic properties of infinitely long and wide slablike Josephson-junction arrays (JJA's) consisting of 2N+1 rows of grains are calculated for the dc Josephson effect with gauge-invariant phase differences. When N is large, the intergranular magnetization curve, M J (H), of the JJA's in low fields approaches that of uniform Josephson junctions with lengths equal to the thicknesses of the JJA's, but in a larger field interval, its amplitude is dually modulated with periods determined by the junction and void areas. M J (H) curves for small N are more complicated. The concept of Josephson vortices and the application of the results to high-T c superconductors are discussed

Internal resonances in periodically modulated long Josephson junctions

DEFF Research Database (Denmark)

Larsen, Britt Hvolbæk; Mygind, Jesper; Ustinov, Alexey V.

1995-01-01

Current-voltage (I-V) characteristics of long Josephson junctions with a periodic lattice of localized inhomogeneities are studied. The interaction between the moving fluxons and the inhomogeneities causes resonant steps in the IV-curve. Some of these steps are due to a synchronization to resonant...... Fiske modes in the sub-junctions formed between the inhomogeneities. The voltage positions of the resonant steps oscillate as function of the applied magnetic field with a period corresponding to the inclusion of one magnetic flux quantum, Φ0=h/2e, per sub-junction. A qualitative explanation that takes...

Capacitance measurement of Josephson tunnel junctions with microwave-induced dc quasiparticle tunneling currents

International Nuclear Information System (INIS)

Hamasaki, K.; Yoshida, K.; Irie, F.; Enpuku, K.

1982-01-01

The microwave response of the dc quasiparticle tunneling current in Josephson tunnel junctions, where the Josephson current is suppressed by an external magnetic field, has been studied quantitatively in order to clarify its characteristics as a probe for the measurement of the junction capacitance. Extensive experiments for both small and long junctions are carried out for distinguishing between microwave behaviors of lumped and distributed constant junctions. It is shown that the observed voltage dependence of the dc quasiparticle tunneling current modified by an applied rf field is in good agreement with a theoretical result which takes into account the influence of the microwave circuit connected to the junction. The comparison between theory and experiment gives the magnitude of the internal rf field in the junction. Together with the applied rf field, this internal rf field leads to the junction rf impedance which is dominated by the junction capacitance in our experimental condition. In the case of lumped junctions, this experimental rf impedance is in reasonable agreement with the theoretical one with the junction capacitance estimated from the Fiske step of the distributed junction fabricated on the same substrate; the obtained ratio of the experimental impedance to the theoretical one is approximately 0.6--1.7. In the case of distributed junctions, however, experimental values of their characteristic impedances are approximately 0.2--0.3 of theoretical values calculated by assuming the one-dimensional junction model and taking account of the standing-wave effect in the junction

Self-positioned thin Pb-alloy base electrode Josephson junction

International Nuclear Information System (INIS)

Kuroda, K.; Sato, K.

1986-01-01

A self-positioned thin (SPOT) Pb-alloy base electrode Josephson junction is developed. In this junction, a 50-nm thick Pb-alloy base electrode is restricted within the junction region on an Nb underlayer using a self-alignment technique. The grain size reduction and the base electrode area restriction greatly improve thermal cycling stability, where the thermal cycling tests of 4000 proposed junctions (5 x 5 μm 2 ) showed no failures after 4000 cycles. In addition, the elimination of insulator layer stress on the Pb-alloy base electrode rectifies the problem of size effect on current density. The Nb underlayers also serve to isolate the Pb-alloy base electrodes from the resistors

High-efficiency thermal switch based on topological Josephson junctions

Science.gov (United States)

Sothmann, Björn; Giazotto, Francesco; Hankiewicz, Ewelina M.

2017-02-01

We propose theoretically a thermal switch operating by the magnetic-flux controlled diffraction of phase-coherent heat currents in a thermally biased Josephson junction based on a two-dimensional topological insulator. For short junctions, the system shows a sharp switching behavior while for long junctions the switching is smooth. Physically, the switching arises from the Doppler shift of the superconducting condensate due to screening currents induced by a magnetic flux. We suggest a possible experimental realization that exhibits a relative temperature change of 40% between the on and off state for realistic parameters. This is a factor of two larger than in recently realized thermal modulators based on conventional superconducting tunnel junctions.

Breaking into the epithelial apical-junctional complex--news from pathogen hackers.

Science.gov (United States)

Vogelmann, Roger; Amieva, Manuel R; Falkow, Stanley; Nelson, W James

2004-02-01

The epithelial apical-junctional complex is a key regulator of cellular functions. In addition, it is an important target for microbial pathogens that manipulate the cell to survive, proliferate and sometimes persist within a host. Out of a myriad of potential molecular targets, some bacterial and viral pathogens have selected a subset of protein targets at the apical-junctional complex of epithelial cells. Studying how microbes use these targets also teaches us about the inherent physiological properties of host molecules in the context of normal junctional structure and function. Thus, we have learned that three recently uncovered components of the apical-junctional complex of the Ig superfamily--junctional adhesion molecule, Nectin and the coxsackievirus and adenovirus receptor--are important regulators of junction structure and function and represent critical targets of microbial virulence gene products.

Dilute Nitrides For 4-And 6- Junction Space Solar Cells

Science.gov (United States)

Essig, S.; Stammler, E.; Ronsch, S.; Oliva, E.; Schachtner, M.; Siefer, G.; Bett, A. W.; Dimroth, F.

2011-10-01

According to simulations the efficiency of conventional, lattice-matched GaInP/GaInAs/Ge triple-junction space solar cells can be strongly increased by the incorporation of additional junctions. In this way the existing excess current of the Germanium bottom cell can be reduced and the voltage of the stack can be increased. In particular, the use of 1.0 eV materials like GaInNAs opens the door for solar cells with significantly improved conversion efficiency. We have investigated the material properties of GaInNAs grown by metal organic vapour phase epitaxy (MOVPE) and its impact on the quantum efficiency of solar cells. Furthermore we have developed a GaInNAs subcell with a bandgap energy of 1.0 eV and integrated it into a GaInP/GaInAs/GaInNAs/Ge 4-junction and a AlGaInP/GaInP/AlGaInAs/GaInAs/GaInNAs/Ge 6- junction space solar cell. The material quality of the dilute nitride junction limits the current density of these devices to 9.3 mA/cm2 (AM0). This is not sufficient for a 4-junction cell but may lead to current matched 6- junction devices in the future.

Josephson junctions in high-T/sub c/ superconductors

Science.gov (United States)

Falco, C.M.; Lee, T.W.

1981-01-14

The invention includes a high T/sub c/ Josephson sperconducting junction as well as the method and apparatus which provides the junction by application of a closely controlled and monitored electrical discharge to a microbridge region connecting two portions of a superconducting film.

Modeling Bloch oscillations in ultra-small Josephson junctions

Science.gov (United States)

Vora, Heli; Kautz, Richard; Nam, Sae Woo; Aumentado, Jose

In a seminal paper, Likharev et al. developed a theory for ultra-small Josephson junctions with Josephson coupling energy (Ej) less than the charging energy (Ec) and showed that such junctions demonstrate Bloch oscillations which could be used to make a fundamental current standard that is a dual of the Josephson volt standard. Here, based on the model of Geigenmüller and Schön, we numerically calculate the current-voltage relationship of such an ultra-small junction which includes various error processes present in a nanoscale Josephson junction such as random quasiparticle tunneling events and Zener tunneling between bands. This model allows us to explore the parameter space to see the effect of each process on the width and height of the Bloch step and serves as a guide to determine whether it is possible to build a quantum current standard of a metrological precision using Bloch oscillations.

Majorana splitting from critical currents in Josephson junctions

Science.gov (United States)

Cayao, Jorge; San-Jose, Pablo; Black-Schaffer, Annica M.; Aguado, Ramón; Prada, Elsa

2017-11-01

A semiconducting nanowire with strong Rashba spin-orbit coupling and coupled to a superconductor can be tuned by an external Zeeman field into a topological phase with Majorana zero modes. Here we theoretically investigate how this exotic topological superconductor phase manifests in Josephson junctions based on such proximitized nanowires. In particular, we focus on critical currents in the short junction limit (LN≪ξ , where LN is the junction length and ξ is the superconducting coherence length) and show that they contain important information about nontrivial topology and Majoranas. This includes signatures of the gap inversion at the topological transition and a unique oscillatory pattern that originates from Majorana interference. Interestingly, this pattern can be modified by tuning the transmission across the junction, thus providing complementary evidence of Majoranas and their energy splittings beyond standard tunnel spectroscopy experiments, while offering further tunability by virtue of the Josephson effect.

AlGaAs/InGaAlP tunnel junctions for multijunction solar cells

Energy Technology Data Exchange (ETDEWEB)

SHARPS,P.R.; LI,N.Y.; HILLS,J.S.; HOU,H.; CHANG,PING-CHIH; BACA,ALBERT G.

2000-05-16

Optimization of GaInP{sub 2}/GaAs dual and GaInP{sub 2}/GaAs/Ge triple junction cells, and development of future generation monolithic multi-junction cells will involve the development of suitable high bandgap tunnel junctions. There are three criteria that a tunnel junction must meet. First, the resistance of the junction must be kept low enough so that the series resistance of the overall device is not increased. For AMO, 1 sun operation, the tunnel junction resistance should be below 5 x 10{sup {minus}2} {Omega}-cm. Secondly, the peak current density for the tunnel junction must also be larger than the J{sub sc} of the cell so that the tunnel junction I-V curve does not have a deleterious effect on the I-V curve of the multi-junction device. Finally, the tunnel junction must be optically transparent, i.e., there must be a minimum of optical absorption of photons that will be collected by the underlying subcells. The paper reports the investigation of four high bandgap tunnel junctions grown by metal-organic chemical vapor deposition.

Critical current fluctuation in a microwave-driven Josephson junction

International Nuclear Information System (INIS)

Dong Ning; Sun Guozhu; Wang Yiwen; Cao Junyu; Yu Yang; Chen Jian; Kang Lin; Xu Weiwei; Han Siyuan; Wu Peiheng

2007-01-01

Josephson junction devices are good candidates for quantum computation. A large energy splitting was observed in the spectroscopy of a superconducting Josephson junction. The presence of the critical current fluctuation near the energy splitting indicated coupling between the junction and a two-level system. Furthermore, we find that this fluctuation is microwave dependent. It only appears at certain microwave frequency. This relation suggested that the decoherence of qubits is influenced by the necessary computing operations

Junction Propagation in Organometal Halide Perovskite-Polymer Composite Thin Films.

Science.gov (United States)

Shan, Xin; Li, Junqiang; Chen, Mingming; Geske, Thomas; Bade, Sri Ganesh R; Yu, Zhibin

2017-06-01

With the emergence of organometal halide perovskite semiconductors, it has been discovered that a p-i-n junction can be formed in situ due to the migration of ionic species in the perovskite when a bias is applied. In this work, we investigated the junction formation dynamics in methylammonium lead tribromide (MAPbBr 3 )/polymer composite thin films. It was concluded that the p- and n- doped regions propagated into the intrinsic region with an increasing bias, leading to a reduced intrinsic perovskite layer thickness and the formation of an effective light-emitting junction regardless of perovskite layer thicknesses (300 nm to 30 μm). The junction propagation also played a major role in deteriorating the LED operation lifetime. Stable perovskite LEDs can be achieved by restricting the junction propagation after its formation.

Magnetic field behavior of current steps in long Josephson junctions

International Nuclear Information System (INIS)

Costabile, G.; Cucolo, A.M.; Pace, S.; Parmentier, R.D.; Savo, B.; Vaglio, R.

1980-01-01

The zero-field steps, or dc current singularities, in the current-voltage characteristics of long Josephson tunnel junctions, first reported by Chen et al., continue to attract research interest both because their study can provide fundamental information on the dynamics of fluxons in such junctions and because they are accompanied by the emission of microwave radiation from the junction, which may be exploitable in practical oscillator applications. The purpose of this paper is to report some experimental observations of the magnetic field behavior of the steps in junctions fabricated in our Laboratory and to offer a qualitative explanation for this behavior. Measurements have been made both for very long (L >> lambdasub(J)) and for slightly long (L approx. >= lambdasub(J)) junctions with a view toward comparing our results with those of other workers. (orig./WRI)

Environmental Audit of the Grand Junction Projects Office

Energy Technology Data Exchange (ETDEWEB)

1991-08-01

The Grand Junction Projects Office (GJPO) is located in Mesa County, Colorado, immediately south and west of the Grand Junction city limits. The US Atomic Energy Commission (AEC) established the Colorado Raw Materials Office at the present-day Grand Junction Projects Office in 1947, to aid in the development of a viable domestic uranium industry. Activities at the site included sampling uranium concentrate; pilot-plant milling research, including testing and processing of uranium ores; and operation of a uranium mill pilot plant from 1954 to 1958. The last shipment of uranium concentrate was sent from GJPO in January, 1975. Since that time the site has been utilized to support various DOE programs, such as the former National Uranium Resource Evaluation (NURE) Program, the Uranium Mill Tailings Remedial Action Project (UMTRAP), the Surplus Facilities Management Program (SFMP), and the Technical Measurements Center (TMC). All known contamination at GJPO is believed to be the result of the past uranium milling, analyses, and storage activities. Hazards associated with the wastes impounded at GJPO include surface and ground-water contamination and potential radon and gamma-radiation exposure. This report documents the results of the Baseline Environmental Audit conducted at Grand Junction Projects Office (GJPO) located in Grand Junction, Colorado. The Grand Junction Baseline Environmental Audit was conducted from May 28 to June 12, 1991, by the Office of Environmental Audit (EH-24). This Audit evaluated environmental programs and activities at GJPO, as well as GJPO activities at the State-Owned Temporary Repository. 4 figs., 12 tabs.

Environmental Audit of the Grand Junction Projects Office

International Nuclear Information System (INIS)

1991-08-01

The Grand Junction Projects Office (GJPO) is located in Mesa County, Colorado, immediately south and west of the Grand Junction city limits. The US Atomic Energy Commission (AEC) established the Colorado Raw Materials Office at the present-day Grand Junction Projects Office in 1947, to aid in the development of a viable domestic uranium industry. Activities at the site included sampling uranium concentrate; pilot-plant milling research, including testing and processing of uranium ores; and operation of a uranium mill pilot plant from 1954 to 1958. The last shipment of uranium concentrate was sent from GJPO in January, 1975. Since that time the site has been utilized to support various DOE programs, such as the former National Uranium Resource Evaluation (NURE) Program, the Uranium Mill Tailings Remedial Action Project (UMTRAP), the Surplus Facilities Management Program (SFMP), and the Technical Measurements Center (TMC). All known contamination at GJPO is believed to be the result of the past uranium milling, analyses, and storage activities. Hazards associated with the wastes impounded at GJPO include surface and ground-water contamination and potential radon and gamma-radiation exposure. This report documents the results of the Baseline Environmental Audit conducted at Grand Junction Projects Office (GJPO) located in Grand Junction, Colorado. The Grand Junction Baseline Environmental Audit was conducted from May 28 to June 12, 1991, by the Office of Environmental Audit (EH-24). This Audit evaluated environmental programs and activities at GJPO, as well as GJPO activities at the State-Owned Temporary Repository. 4 figs., 12 tabs

Absolute migration and the evolution of the Rodriguez triple junction ...

African Journals Online (AJOL)

The Rodriguez Triple Junction (RTJ) is a junction connecting three mid-ocean ridges in the Indian Ocean: the Southwest Indian Ridge (SWIR), the Central Indian Ridge (CIR) and the Southeast Indian Ridge (SEIR). The evolution of the RTJ has been studied extensively for the past 10 Ma and the triple junction is believed to ...

Supercurrent and multiple Andreev reflections in micrometer-long ballistic graphene Josephson junctions.

Science.gov (United States)

Zhu, Mengjian; Ben Shalom, Moshe; Mishchsenko, Artem; Fal'ko, Vladimir; Novoselov, Kostya; Geim, Andre

2018-02-08

Ballistic Josephson junctions are predicted to support a number of exotic physics processess, providing an ideal system to inject the supercurrent in the quantum Hall regime. Herein, we demonstrate electrical transport measurements on ballistic superconductor-graphene-superconductor junctions by contacting graphene to niobium with a junction length up to 1.5 μm. Hexagonal boron nitride encapsulation and one-dimensional edge contacts guarantee high-quality graphene Josephson junctions with a mean free path of several micrometers and record-low contact resistance. Transports in normal states including the observation of Fabry-Pérot oscillations and Sharvin resistance conclusively witness the ballistic propagation in the junctions. The critical current density J C is over one order of magnitude larger than that of the previously reported junctions. Away from the charge neutrality point, the I C R N product (I C is the critical current and R N the normal state resistance of junction) is nearly a constant, independent of carrier density n, which agrees well with the theory for ballistic Josephson junctions. Multiple Andreev reflections up to the third order are observed for the first time by measuring the differential resistance in the micrometer-long ballistic graphene Josephson junctions.

Shapiro and parametric resonances in coupled Josephson junctions

International Nuclear Information System (INIS)

Gaafar, Ma A; Shukrinov, Yu M; Foda, A

2012-01-01

The effect of microwave irradiation on the phase dynamics of intrinsic Josephson junctions in high temperature superconductors is investigated. We compare the current-voltage characteristics for a stack of coupled Josephson junctions under external irradiation calculated in the framework of CCJJ and CCJJ+DC models.

Towards molecular electronics with large-area molecular junctions

NARCIS (Netherlands)

Akkerman, HB; Blom, PWM; de Leeuw, DM; de Boer, B

2006-01-01

Electronic transport through single molecules has been studied extensively by academic(1-8) and industrial(9,10) research groups. Discrete tunnel junctions, or molecular diodes, have been reported using scanning probes(11,12), break junctions(13,14), metallic crossbars(6) and nanopores(8,15). For

Chlorpromazine reduces the intercellular communication via gap junctions in mammalian cells

International Nuclear Information System (INIS)

Orellana, Juan A.; Palacios-Prado, Nicolas; Saez, Juan C.

2006-01-01

In the work presented herein, we evaluated the effect of chlorpromazine (CPZ) on gap junctions expressed by two mammalian cell types; Gn-11 cells (cell line derived from mouse LHRH neurons) and rat cortical astrocytes maintained in culture. We also attempted to elucidate possible mechanisms of action of CPZ effects on gap junctions. CPZ, in concentrations comparable with doses used to treat human diseases, was found to reduce the intercellular communication via gap junctions as evaluated with measurements of dye coupling (Lucifer yellow). In both cell types, maximal inhibition of functional gap junctions was reached within about 1 h of treatment with CPZ, an recovery was almost complete at about 5 h after CPZ wash out. In both cell types, CPZ treatment increased the phosphorylation state of connexin43 (Cx43), a gap junction protein subunit. Moreover, CPZ reduced the reactivity of Cx43 (immunofluorescence) at cell interfaces and concomitantly increased its reactivity in intracellular vesicles, suggesting an increased retrieval from and/or reduced insertion into the plasma membrane. CPZ also caused cellular retraction reducing cell-cell contacts in a reversible manner. The reduction in contact area might destabilize existing gap junctions and abrogate formation of new ones. Moreover, the CPZ-induced reduction in gap junctional communication may depend on the connexins (Cxs) forming the junctions. If Cx43 were the only connexin expressed, MAPK-dependent phosphorylation of this connexin would induce closure of gap junction channels

Exotic hadron and string junction model

International Nuclear Information System (INIS)

Imachi, Masahiro

1978-01-01

Hadron structure is investigated adopting string junction model as a realization of confinement. Besides exotic hadrons (M 4 , B 5 etc.), unconventional hadrons appear. A mass formula for these hadrons is proposed. New selection rule is introduced which requires the covalence of constituent line at hadron vertex. New duality appears due to the freedom of junction, especially in anti BB→anti BB reaction. A possible assignment of exotic and unconventional hadrons to recently observed narrow meson states is presented. (auth.)

Radiation detectors

International Nuclear Information System (INIS)

2013-01-01

This sixth chapter presents the operational principles of the radiation detectors; detection using photographic emulsions; thermoluminescent detectors; gas detectors; scintillation detectors; liquid scintillation detectors; detectors using semiconductor materials; calibration of detectors; Bragg-Gray theory; measurement chain and uncertainties associated to measurements

ACCIDENT PREDICTION MODELS FOR UNSIGNALISED URBAN JUNCTIONS IN GHANA

OpenAIRE

Mohammed SALIFU, MSc., PhD, MIHT, MGhIE

2004-01-01

The main objective of this study was to provide an improved method for safety appraisal in Ghana through the development and application of suitable accident prediction models for unsignalised urban junctions. A case study was designed comprising 91 junctions selected from the two most cosmopolitan cities in Ghana. A wide range of traffic and road data together with the corresponding accident data for each junction for the three-year period 1996-1998 was utilized in the model development p...

Phase Sensitive Measurements of Ferromagnetic Josephson Junctions for Cryogenic Memory Applications

Science.gov (United States)

Niedzielski, Bethany Maria

A Josephson junction is made up of two superconducting layers separated by a barrier. The original Josephson junctions, studied in the early 1960's, contained an insulating barrier. Soon thereafter, junctions with normal-metal barriers were also studied. Ferromagnetic materials were not even theoretically considered as a barrier layer until around 1980, due to the competing order between ferromagnetic and superconducting systems. However, many exciting physical phenomena arise in hybrid superconductor/ferromagnetic devices, including devices where the ground state phase difference between the two superconductors is shifted by pi. Since their experimental debut in 2001, so-called pi junctions have been demonstrated by many groups, including my own, in systems with a single ferromagnetic layer. In this type of system, the phase of the junction can be set to either 0 or pi depending on the thickness of the ferromagnetic layer. Of interest, however, is the ability to control the phase of a single junction between the 0 and pi states. This was theoretically shown to be possible in a system containing two ferromagnetic layers (spin-valve junctions). If the materials and their thicknesses are properly chosen to manipulate the electron pair correlation function, then the phase state of a spin-valve Josephson junction should be capable of switching between the 0 and ? phase states when the magnetization directions of the two ferromagnetic layers are oriented in the antiparallel and parallel configurations, respectively. Such a phase-controllable junction would have immediate applications in cryogenic memory, which is a necessary component to an ultra-low power superconducting computer. A fully superconducting computer is estimated to be orders of magnitude more energy-efficient than current semiconductor-based supercomputers. The goal of this work was to experimentally verify this prediction for a phase-controllable ferromagnetic Josephson junction. To address this

Droplet Traffic Control at a simple T junction

Science.gov (United States)

Panizza, Pascal; Engl, Wilfried; Colin, Annie; Ajdari, Armand

2006-03-01

A basic yet essential element of every traffic flow control is the effect of a junction where the flow is separated into several streams. How do pedestrians, vehicles or blood cells divide when they reach a junction? How does the outcome depend on their density? Similar fundamental questions hold for much simpler systems: in this paper, we have studied the behaviour of periodic trains of water droplets flowing in oil through a channel as they reach a simple, locally symmetric, T junction. Depending on their dilution, we observe that the droplets are either alternately partitioned between both outlets or sorted exclusively into the shortest one. We show that this surprising behaviour results from the hydrodynamic feed-back of drops in the two outlets on the selection process occurring at the junction. Our results offer a first guide for the design and modelling of droplet traffic in complex branched networks, a necessary step towards parallelized droplet-based ``lab-on-chip'' devices.

The string-junction picture of multiquark states: an update

Energy Technology Data Exchange (ETDEWEB)

Rossi, G.C. [Dipartimento di Fisica, Università di Roma Tor Vergata, INFN, Sezione di Roma 2, Via della Ricerca Scientifica, 00133 Roma (Italy); Centro Fermi, Museo Storico della Fisica,Piazza del Viminale 1, 00184 Roma (Italy); Veneziano, G. [Collège de France,11 place M. Berthelot, 75005 Paris (France); Theory Division, CERN,CH-1211 Geneva 23 (Switzerland); Dipartimento di Fisica, Università di Roma La Sapienza,Piazzale A. Moro 5, 00185 Roma (Italy)

2016-06-07

We recall and update, both theoretically and phenomenologically, our (nearly) forty-years-old proposal of a string-junction as a necessary complement to the conventional classification of hadrons based just on their quark-antiquark constituents. In that proposal single (though in general metastable) hadronic states are associated with “irreducible' gauge-invariant operators consisting of Wilson lines (visualized as strings of color flux tubes) that may either end on a quark or an antiquark, or annihilate in triplets at a junction J or an anti-junction J̄. For the junction-free sector (ordinary q q̄ mesons and glueballs) the picture is supported by large-N (number of colors) considerations as well as by a lattice strong-coupling expansion. Both imply the famous OZI rule suppressing quark-antiquark annihilation diagrams. For hadrons with J and/or J̄ constituents the same expansions support our proposal, including its generalization of the OZI rule to the suppression of J−J̄ annihilation diagrams. Such a rule implies that hadrons with junctions are “mesophobic' and thus unusually narrow if they are below threshold for decaying into as many baryons as their total number of junctions (two for a tetraquark, three for a pentaquark). Experimental support for our claim, based on the observation that narrow multiquark states typically lie below (well above) the relevant baryonic (mesonic) thresholds, will be presented.

Mixing Hot and Cold Water Streams at a T-Junction

Science.gov (United States)

Sharp, David; Zhang, Mingqian; Xu, Zhenghe; Ryan, Jim; Wanke, Sieghard; Afacan, Artin

2008-01-01

A simple mixing of a hot- and cold-water stream at a T-junction was investigated. The main objective was to use mass and energy balance equations to predict mass low rates and the temperature of the mixed stream after the T-junction, and then compare these with the measured values. Furthermore, the thermocouple location after the T-junction and…

Vortex dynamics in Josephson ladders with II-junctions

DEFF Research Database (Denmark)

Kornev, Victor K.; Klenov, N. V.; Oboznov, V.A.

2004-01-01

Both experimental and numerical studies of a self-frustrated triangular array of pi-junctions are reported. The array of SFS Josephson junctions shows a transition to the pi-state and self-frustration with a decrease in temperature. This manifests itself in a half-period shift of the bias critica...

Optically induced bistable states in metal/tunnel-oxide/semiconductor /MTOS/ junctions

Science.gov (United States)

Lai, S. K.; Dressendorfer, P. V.; Ma, T. P.; Barker, R. C.

1981-01-01

A new switching phenomenon in metal-oxide semiconductor tunnel junction has been discovered. With a sufficiently large negative bias applied to the electrode, incident visible light of intensity greater than about 1 microW/sq cm causes the reverse-biased junction to switch from a low-current to a high-current state. It is believed that hot-electron-induced impact ionization provides the positive feedback necessary for switching, and causes the junction to remain in its high-current state after the optical excitation is removed. The junction may be switched back to the low-current state electrically. The basic junction characteristics have been measured, and a simple model for the switching phenomenon has been developed.

NbN-AlN-NbN Josephson junctions on different substrates

Energy Technology Data Exchange (ETDEWEB)

Merker, Michael; Bohn, Christian; Voellinger, Marvin; Ilin, Konstantin; Siegel, Michael [KIT, Karlsruhe (Germany)

2016-07-01

Josephson junction technology is important for the realization of high quality cryogenic devices such as SQUIDs, RSFQ or SIS-mixers. The material system based on NbN/AlN/NbN tri-layer has gained a lot of interest, because it offers higher gap voltages and critical current densities compared to the well-established Nb/Al-AlOx/Nb technology. However, the realization of high quality Josephson junctions is more challenging. We developed a technology of Josephson junctions on a variety of substrates such as Silicon, Sapphire and Magnesium oxide and compared the quality parameters of these junctions at 4.2 K. The gap voltages achieved a range from 4 mV (for the junctions on Si) to 5.8 mV (in case of MgO substrates) which is considerably higher than those obtained from Nb based Josephson junctions. Another key parameter is the ratio of the subgap resistance to the normal state resistance. This so-called subgap ratio corresponds to the losses in a Josephson junction which have to be minimized. So far, subgap ratios of 26 have been achieved. Further careful optimization of the deposition conditions is required to maximize this ratio, The details of the optimization of technology and of characterization of NbN/AlN/NbN junctions will be presented and discussed.

Superconducting tunnel-junction refrigerator

International Nuclear Information System (INIS)

Melton, R.G.; Paterson, J.L.; Kaplan, S.B.

1980-01-01

The dc current through an S 1 -S 2 tunnel junction, with Δ 2 greater than Δ 1 , when biased with eV 1 +Δ 2 , will lower the energy in S 1 . This energy reduction will be shared by the phonons and electrons. This device is shown to be analogous to a thermoelectric refrigerator with an effective Peltier coefficient π* approx. Δ 1 /e. Tunneling calculations yield the cooling power P/sub c/, the electrical power P/sub e/ supplied by the bias supply, and the cooling efficiency eta=P/sub c//P/sub e/. The maximum cooling power is obtained for eV= +- (Δ 2 -Δ 1 ) and t 1 =T 1 /T/sub c/1 approx. 0.9. Estimates are made of the temperature difference T 2 -T 1 achievable in Al-Pb and Sn-Pb junctions with an Al 2 O 3 tunneling barrier. The performance of this device is shown to yield a maximum cooling efficiency eta approx. = Δ 1 /(Δ 2 -Δ 1 ) which can be compared with that available in an ideal Carnot refrigerator of eta=T 1 /(T 2 -T 1 ). The development of a useful tunnel-junction refrigerator requires a tunneling barrier with an effective thermal conductance per unit area several orders of magnitude less than that provided by the A1 2 O 3 barrier in the Al-Pb and Sn-Pb systems

Marker of cemento-periodontal ligament junction associated with periodontal regeneration.

Science.gov (United States)

Hara, Ryohko; Wato, Masahiro; Tanaka, Akio

2005-06-01

The purpose of this study was to identify factors promoting formation of the cemento-periodontal ligament junction. Regeneration of the cemento-periodontal ligament junction is an important factor in recovery of the connective tissue attachment to the cementum and it is important to identify all specific substances that promote its formation. To clarify the substances involved in cemento-periodontal ligament junction formation, we produced a monoclonal antibody (mAb) to human cemento-periodontal ligament junction (designated as the anti-TAP mAb) and examined its immunostaining properties and reactive antigen. Hybridomas producing monoclonal antibody against human cemento-periodontal ligament junction antigens were established by fusing P3U1 mouse myeloma cells with spleen cells from BALB/c mice immunized with homogenized human cemento-periodontal ligament junction. The mAb, the anti-TAP mAb for cemento-periodontal ligament junction, was then isolated. The immunoglobulin class and light chain of the mAb were examined using an isotyping kit. Before immunostaining, antigen determination using an enzymatic method or heating was conducted. Human teeth, hard tissue-forming lesions, and animal tissues were immunostained by the anti-TAP mAb. The anti-TAP mAb was positive in human cemento-periodontal ligament junction and predentin but negative in all other human and animal tissues examined. In the cemento-osseous lesions, the anti-TAP mAb was positive in the peripheral area of the cementum and cementum-like hard tissues and not in the bone and bone-like tissues. The anti-TAP mAb showed IgM (kappa) and recognized phosphoprotein. The anti-TAP mAb is potentially useful for developing new agents promoting cementogenesis and periodontal regeneration.

Ionization detector

International Nuclear Information System (INIS)

Steele, D.S.

1987-01-01

An ionization detector having an array of detectors has, for example, grounding pads positioned in the spaces between some detectors (data detectors) and other detectors (reference detectors). The grounding pads are kept at zero electric potential, i.e. grounded. The grounding serves to drain away electrons and thereby prevent an unwanted accumulation of charge in the spaces, and cause the electric field lines to be more perpendicular to the detectors in regions near the grounding pads. Alternatively, no empty space is provided there being additional, grounded, detectors provided between the data and reference detectors. (author)

A numerical model of p-n junctions bordering on surfaces

Energy Technology Data Exchange (ETDEWEB)

Altermatt, P.P.; Aberle, A.G.; Jianhua Zhao; Aihua Wang; Heiser, G. [University of New South Wales, Sydney (Australia). Centre for Photovolatic Engineering

2002-10-01

Many solar cell structures contain regions where the emitter p-n junction borders on the surface. If the surface is not well passivated, a large amount of recombination occurs in such regions. This type of recombination is influenced by the electrostatics of both the p-n junction and the surface, and hence it is different from the commonly described recombination phenomena occurring in the p-n junction within the bulk. We developed a two-dimensional model for the recombination mechanisms occurring in emitter p-n junctions bordering on surfaces. The model is validated by reproducing the experimental I-V curves of specially designed silicon solar cells. It is shown under which circumstances a poor surface passivation, near where the p-n junction borders on the surface, reduces the fill factor and the open-circuit voltage. The model can be applied to many other types of solar cells. (author)

Preparation of CN /Carbon Nanotube Intramolecular Junctions by ...

African Journals Online (AJOL)

NICO

intramolecular junctions composed of CNx with a bamboo-like structure and empty hollow carbon nanotubes were observed, ... and excellent thermal and mechanical properties.1,2 In recent .... tion of hexane, and the other segment with a curved compart- ... by an arrow lies at the interface of the junction between 'b' and.

Systematic optimization of quantum junction colloidal quantum dot solar cells

KAUST Repository

Liu, Huan

2012-01-01

The recently reported quantum junction architecture represents a promising approach to building a rectifying photovoltaic device that employs colloidal quantum dot layers on each side of the p-n junction. Here, we report an optimized quantum junction solar cell that leverages an improved aluminum zinc oxide electrode for a stable contact to the n-side of the quantum junction and silver doping of the p-layer that greatly enhances the photocurrent by expanding the depletion region in the n-side of the device. These improvements result in greater stability and a power conversion efficiency of 6.1 under AM1.5 simulated solar illumination. © 2012 American Institute of Physics.

Proliferation of sharp kinks on cosmic (super)string loops with junctions

International Nuclear Information System (INIS)

Binetruy, P.; Bohe, A.; Hertog, T.; Steer, D. A.

2010-01-01

Motivated by their effect on the gravitational wave signal emitted by cosmic strings, we study the dynamics of kinks on strings of different tensions meeting at junctions. The propagation of a kink through a Y junction leads to the formation of three 'daughter' kinks. Assuming a uniform distribution of the incoming wave vectors at the junction, we find there is a significant region of configuration space in which the sharpness of at least one of the daughter kinks is enhanced relative to the sharpness of the initial kink. For closed loops with junctions we show this leads to an exponential growth in time of very sharp kinks. Using numerical simulations of realistic, evolving cosmic string loops with junctions to calculate the distribution of kink amplitudes as a function of time, we show that loops of this kind typically develop several orders of magnitude of very sharp kinks before the two junctions collide. This collision, or other effects such as gravitational backreaction, may end the proliferation.

Field-In-Field Technique With Intrafractionally Modulated Junction Shifts for Craniospinal Irradiation

International Nuclear Information System (INIS)

Yom, Sue S.; Frija, Erik K. C.; Mahajan, Anita; Chang, Eric; Klein, Kelli C.; Shiu, Almon; Ohrt, Jared; Woo, Shiao

2007-01-01

Purpose: To plan craniospinal irradiation with 'field-in-field' (FIF) homogenization in combination with daily, intrafractional modulation of the field junctions, to minimize the possibility of spinal cord overdose. Methods and Materials: Lateral cranial fields and posterior spinal fields were planned using a forward-planned, step-and-shoot FIF technique. Field junctions were automatically modulated and custom-weighted for maximal homogeneity within each treatment fraction. Dose-volume histogram analyses and film dosimetry were used to assess results. Results: Plan inhomogeneity improved with FIF. Planning with daily modulated junction shifts provided consistent dose delivery during each fraction of treatment across the junctions. Modulation minimized the impact of a 5-mm setup error at the junction. Film dosimetry confirmed that no point in the junction exceeded the anticipated dose. Conclusions: Field-in-field planning and modulated junction shifts improve the homogeneity and consistency of daily dose delivery, simplify treatment, and reduce the impact of setup errors

Direct analysis of Holliday junction resolving enzyme in a DNA origami nanostructure.

Science.gov (United States)

Suzuki, Yuki; Endo, Masayuki; Cañas, Cristina; Ayora, Silvia; Alonso, Juan C; Sugiyama, Hiroshi; Takeyasu, Kunio

2014-06-01

Holliday junction (HJ) resolution is a fundamental step for completion of homologous recombination. HJ resolving enzymes (resolvases) distort the junction structure upon binding and prior cleavage, raising the possibility that the reactivity of the enzyme can be affected by a particular geometry and topology at the junction. Here, we employed a DNA origami nano-scaffold in which each arm of a HJ was tethered through the base-pair hybridization, allowing us to make the junction core either flexible or inflexible by adjusting the length of the DNA arms. Both flexible and inflexible junctions bound to Bacillus subtilis RecU HJ resolvase, while only the flexible junction was efficiently resolved into two duplexes by this enzyme. This result indicates the importance of the structural malleability of the junction core for the reaction to proceed. Moreover, cleavage preferences of RecU-mediated reaction were addressed by analyzing morphology of the reaction products. © The Author(s) 2014. Published by Oxford University Press on behalf of Nucleic Acids Research.

GaAs nanowire array solar cells with axial p-i-n junctions.

Science.gov (United States)

Yao, Maoqing; Huang, Ningfeng; Cong, Sen; Chi, Chun-Yung; Seyedi, M Ashkan; Lin, Yen-Ting; Cao, Yu; Povinelli, Michelle L; Dapkus, P Daniel; Zhou, Chongwu

2014-06-11

Because of unique structural, optical, and electrical properties, solar cells based on semiconductor nanowires are a rapidly evolving scientific enterprise. Various approaches employing III-V nanowires have emerged, among which GaAs, especially, is under intense research and development. Most reported GaAs nanowire solar cells form p-n junctions in the radial direction; however, nanowires using axial junction may enable the attainment of high open circuit voltage (Voc) and integration into multijunction solar cells. Here, we report GaAs nanowire solar cells with axial p-i-n junctions that achieve 7.58% efficiency. Simulations show that axial junctions are more tolerant to doping variation than radial junctions and lead to higher Voc under certain conditions. We further study the effect of wire diameter and junction depth using electrical characterization and cathodoluminescence. The results show that large diameter and shallow junctions are essential for a high extraction efficiency. Our approach opens up great opportunity for future low-cost, high-efficiency photovoltaics.

Contour junctions defined by dynamic image deformations enhance perceptual transparency.

Science.gov (United States)

Kawabe, Takahiro; Nishida, Shin'ya

2017-11-01

The majority of work on the perception of transparency has focused on static images with luminance-defined contour junctions, but recent work has shown that dynamic image sequences with dynamic image deformations also provide information about transparency. The present study demonstrates that when part of a static image is dynamically deformed, contour junctions at which deforming and nondeforming contours are connected facilitate the deformation-based perception of a transparent layer. We found that the impression of a transparent layer was stronger when a dynamically deforming area was adjacent to static nondeforming areas than when presented alone. When contour junctions were not formed at the dynamic-static boundaries, however, the impression of a transparent layer was not facilitated by the presence of static surrounding areas. The effect of the deformation-defined junctions was attenuated when the spatial pattern of luminance contrast at the junctions was inconsistent with the perceived transparency related to luminance contrast, while the effect did not change when the spatial luminance pattern was consistent with it. In addition, the results showed that contour completions across the junctions were required for the perception of a transparent layer. These results indicate that deformation-defined junctions that involve contour completion between deforming and nondeforming regions enhance the perception of a transparent layer, and that the deformation-based perceptual transparency can be promoted by the simultaneous presence of appropriately configured luminance and contrast-other features that can also by themselves produce the sensation of perceiving transparency.

Proposed differential-frequency-readout system by hysteretic Josephson junctions

International Nuclear Information System (INIS)

Wang, L.Z.; Duncan, R.V.

1992-01-01

The Josephson relation V=nhν/2e has been verified experimentally to 3 parts in 10 19 [A. K. Jain, J. E. Lukens, and J.-S. Tsai, Phys. Rev. Lett. 58, 1165 (1987)]. Motivated by this result, we propose a differential-frequency-readout system by two sets of hysteretic Josephson junctions rf biased at millimeter wavelengths. Because of the Josephson relation, the proposed differential-frequency-readout system is not limited by photon fluctuation, which limits most photon-detection schemes. In the context of the Stewart-McCumber model [W. C. Stewart, Appl. Phys. Lett. 12, 277 (1968); D. E. McCumber, J. Appl. Phys. 39, 3113 (1968)] of Josephson junctions, we show theoretically that the differential frequency of the two milliwave biases can be read out by the proposed system to unprecedented accuracy. The stability of the readout scheme is also discussed. The measurement uncertainty of the readout system resulting from the intrinsic thermal noise in the hysteretic junctions is shown to be insignificant. The study of two single junctions can be extended to two sets of Josephson junctions connected in series (series array) in this measurement scheme provided that junctions are separated by at least 10 μm [D. W. Jillie, J. E. Lukens, and Y. H. Kao, Phys. Rev. Lett. 38, 915 (1977)]. The sensitivity for the differential frequency detection may be increased by biasing both series arrays to a higher constant-voltage step

Human zonulin, a potential modulator of intestinal tight junctions.

Science.gov (United States)

Wang, W; Uzzau, S; Goldblum, S E; Fasano, A

2000-12-01

Intercellular tight junctions are dynamic structures involved in vectorial transport of water and electrolytes across the intestinal epithelium. Zonula occludens toxin derived from Vibrio cholerae interacts with a specific intestinal epithelial surface receptor, with subsequent activation of a complex intracellular cascade of events that regulate tight junction permeability. We postulated that this toxin may mimic the effect of a functionally and immunologically related endogenous modulator of intestinal tight junctions. Affinity-purified anti-zonula occludens toxin antibodies and the Ussing chamber assay were used to screen for one or more mammalian zonula occludens toxin analogues in both fetal and adult human intestine. A novel protein, zonulin, was identified that induces tight junction disassembly in non-human primate intestinal epithelia mounted in Ussing chambers. Comparison of amino acids in the active zonula occludens toxin fragment and zonulin permitted the identification of the putative receptor binding domain within the N-terminal region of the two proteins. Zonulin likely plays a pivotal role in tight junction regulation during developmental, physiological, and pathological processes, including tissue morphogenesis, movement of fluid, macromolecules and leukocytes between the intestinal lumen and the interstitium, and inflammatory/autoimmune disorders.

Large eddy simulation of a wing-body junction flow

Science.gov (United States)

Ryu, Sungmin; Emory, Michael; Campos, Alejandro; Duraisamy, Karthik; Iaccarino, Gianluca

2014-11-01

We present numerical simulations of the wing-body junction flow experimentally investigated by Devenport & Simpson (1990). Wall-junction flows are common in engineering applications but relevant flow physics close to the corner region is not well understood. Moreover, performance of turbulence models for the body-junction case is not well characterized. Motivated by the insufficient investigations, we have numerically investigated the case with Reynolds-averaged Naiver-Stokes equation (RANS) and Large Eddy Simulation (LES) approaches. The Vreman model applied for the LES and SST k- ω model for the RANS simulation are validated focusing on the ability to predict turbulence statistics near the junction region. Moreover, a sensitivity study of the form of the Vreman model will also be presented. This work is funded under NASA Cooperative Agreement NNX11AI41A (Technical Monitor Dr. Stephen Woodruff)

Mechanical break junctions: enormous information in a nanoscale package.

Science.gov (United States)

Natelson, Douglas

2012-04-24

Mechanical break junctions, particularly those in which a metal tip is repeatedly moved in and out of contact with a metal film, have provided many insights into electronic conduction at the atomic and molecular scale, most often by averaging over many possible junction configurations. This averaging throws away a great deal of information, and Makk et al. in this issue of ACS Nano demonstrate that, with both simulated and real experimental data, more sophisticated two-dimensional analysis methods can reveal information otherwise obscured in simple histograms. As additional measured quantities come into play in break junction experiments, including thermopower, noise, and optical response, these more sophisticated analytic approaches are likely to become even more powerful. While break junctions are not directly practical for useful electronic devices, they are incredibly valuable tools for unraveling the electronic transport physics relevant for ultrascaled nanoelectronics.

BPS dynamics of the triple (p,q) string junction

International Nuclear Information System (INIS)

Rey, S.-J.; Yee, J.-T.

1998-01-01

We study the dynamics of the triple junction of (p,q) strings in type IIB string theory. We probe the tension and mass density of (p,q) strings by studying harmonic fluctuations of the triple junction. We show that they agree perfectly with the BPS formula provided a suitable geometric interpretation of the junction is given. We provide a precise statement of the BPS limit and force-balance property. At weak coupling and sufficiently dense limit, we argue that a (p,q) string embedded in the string network is a 'wiggly string', whose low-energy dynamics can be described via a renormalization group evolved, smooth effective non-relativistic string. We also suggest the possibility that, upon type IIB strings being promoted to the M-theory membrane, there can exist 'evanescent' bound-states at the triple junction in the continuum. (orig.)

Symmetry breaking in SNS junctions: edge transport and field asymmetries

Science.gov (United States)

Suominen, Henri; Nichele, Fabrizio; Kjaergaard, Morten; Rasmussen, Asbjorn; Danon, Jeroen; Flensberg, Karsten; Levitov, Leonid; Shabani, Javad; Palmstrom, Chris; Marcus, Charles

We study magnetic diffraction patterns in a tunable superconductor-semiconductor-superconductor junction. By utilizing epitaxial growth of aluminum on InAs/InGaAs we obtain transparent junctions which display a conventional Fraunhofer pattern of the critical current as a function of applied perpendicular magnetic field, B⊥. By studying the angular dependence of the critical current with applied magnetic fields in the plane of the junction we find a striking anisotropy. We attribute this effect to dephasing of Andreev states in the bulk of the junction, leading to SQUID like behavior when the magnetic field is applied parallel to current flow. Furthermore, in the presence of both in-plane and perpendicular fields, asymmetries in +/-B⊥ are observed. We suggest possible origins and discuss the role of spin-orbit and Zeeman physics together with a background disorder potential breaking spatial symmetries of the junction. Research supported by Microsoft Project Q, the Danish National Research Foundation and the NSF through the National Nanotechnology Infrastructure Network.

Charge splitters and charge transport junctions based on guanine quadruplexes

Science.gov (United States)

Sha, Ruojie; Xiang, Limin; Liu, Chaoren; Balaeff, Alexander; Zhang, Yuqi; Zhang, Peng; Li, Yueqi; Beratan, David N.; Tao, Nongjian; Seeman, Nadrian C.

2018-04-01

Self-assembling circuit elements, such as current splitters or combiners at the molecular scale, require the design of building blocks with three or more terminals. A promising material for such building blocks is DNA, wherein multiple strands can self-assemble into multi-ended junctions, and nucleobase stacks can transport charge over long distances. However, nucleobase stacking is often disrupted at junction points, hindering electric charge transport between the two terminals of the junction. Here, we show that a guanine-quadruplex (G4) motif can be used as a connector element for a multi-ended DNA junction. By attaching specific terminal groups to the motif, we demonstrate that charges can enter the structure from one terminal at one end of a three-way G4 motif, and can exit from one of two terminals at the other end with minimal carrier transport attenuation. Moreover, we study four-way G4 junction structures by performing theoretical calculations to assist in the design and optimization of these connectors.

E-cadherin junction formation involves an active kinetic nucleation process

Science.gov (United States)

Biswas, Kabir H.; Hartman, Kevin L.; Yu, Cheng-han; Harrison, Oliver J.; Song, Hang; Smith, Adam W.; Huang, William Y. C.; Lin, Wan-Chen; Guo, Zhenhuan; Padmanabhan, Anup; Troyanovsky, Sergey M.; Dustin, Michael L.; Shapiro, Lawrence; Honig, Barry; Zaidel-Bar, Ronen; Groves, Jay T.

2015-01-01

Epithelial (E)-cadherin-mediated cell−cell junctions play important roles in the development and maintenance of tissue structure in multicellular organisms. E-cadherin adhesion is thus a key element of the cellular microenvironment that provides both mechanical and biochemical signaling inputs. Here, we report in vitro reconstitution of junction-like structures between native E-cadherin in living cells and the extracellular domain of E-cadherin (E-cad-ECD) in a supported membrane. Junction formation in this hybrid live cell-supported membrane configuration requires both active processes within the living cell and a supported membrane with low E-cad-ECD mobility. The hybrid junctions recruit α-catenin and exhibit remodeled cortical actin. Observations suggest that the initial stages of junction formation in this hybrid system depend on the trans but not the cis interactions between E-cadherin molecules, and proceed via a nucleation process in which protrusion and retraction of filopodia play a key role. PMID:26290581

Tunnel magnetoresistance in double spin filter junctions

International Nuclear Information System (INIS)

Saffarzadeh, Alireza

2003-01-01

We consider a new type of magnetic tunnel junction, which consists of two ferromagnetic tunnel barriers acting as spin filters (SFs), separated by a nonmagnetic metal (NM) layer. Using the transfer matrix method and the free-electron approximation, the dependence of the tunnel magnetoresistance (TMR) on the thickness of the central NM layer, bias voltage and temperature in the double SF junction are studied theoretically. It is shown that the TMR and electron-spin polarization in this structure can reach very large values under suitable conditions. The highest value of the TMR can reach 99%. By an appropriate choice of the thickness of the central NM layer, the degree of spin polarization in this structure will be higher than that of the single SF junctions. These results may be useful in designing future spin-polarized tunnelling devices

Breaking gold nano-junctions simulation and analysis

DEFF Research Database (Denmark)

Lauritzen, Kasper Primdal

, to predict the structure of a gold junction just as it breaks. This method is based on artificial neural networks and can be used on experimental data, even when it is trained purely on simulated data. The method is extended to other types of experimental traces, where it is trained without the use......Simulating the movements of individual atoms allows us to look at and investigate the physical processes that happen in an experiment. In this thesis I use simulations to support and improve experimental studies of breaking gold nano-junctions. By using molecular dynamics to study gold nanowires, I...... can investigate their breaking forces under varying conditions, like stretching rate or temperature. This resolves a confusion in the literature, where the breaking forces of two different breaking structures happen to coincide. The correlations between the rupture and reformation of a gold junction...

Membrane junctions in Xenopus eggs: their distribution suggests a role in calcium regulation.

Science.gov (United States)

Gardiner, D M; Grey, R D

1983-04-01

We have observed the presence of membrane junctions formed between the plasma membrane and cortical endoplasmic reticulum of mature, unactivated eggs of xenopus laevis. The parallel, paired membranes of the junction are separated by a 10-mn gap within which electron-dense material is present. This material occurs in patches with an average center-to-center distance of approximately 30 nm. These junctions are rare in immature (but fully grown) oocytes (approximately 2 percent of the plasma membrane is associated with junctions) and increase dramatically during progesterone-induced maturation. Junctions in the mature, unactivated egg are two to three times more abundant in the animal hemisphere (25-30 percent of the plasma membrane associated with junction) as compared with the vegetal hemisphere (10-15 percent). Junction density decreases rapidly to values characteristic of immature oocytes in response to egg activation. The plasma membrane-ER junctions of xenopus eggs are strikingly similar in structure to membrane junctions in muscle cells thought to be essential in the triggering of intracellular calcium release from the sarcoplasmic reticulum. In addition, the junctions' distinctive, animal-vegetal polarity of distribution, their dramatic appearance during maturation, and their disapperance during activation are correlated with previously documented patterns of calcium-mediated events in anuran eggs. We discuss several lines of evidence supporting the hypothesis that these junctions in xenopus eggs are sites that transduce extracellular events into intracellular calcium release during fertilization and activation of development.

Stretching of BDT-gold molecular junctions: Thiol or thiolate termination?

KAUST Repository

Souza, Amaury De Melo; Rungger, Ivan; Pontes, Renato Borges; Rocha, Alexandre Reily; Da Silva, Antô nio José Roque; Schwingenschlö gl, Udo; Sanvito, S.

2014-01-01

It is often assumed that the hydrogen atoms in the thiol groups of a benzene-1,4-dithiol dissociate when Au-benzene-1,4-dithiol-Au junctions are formed. We demonstrate, by stability and transport property calculations, that this assumption cannot be made. We show that the dissociative adsorption of methanethiol and benzene-1,4-dithiol molecules on a flat Au(111) surface is energetically unfavorable and that the activation barrier for this reaction is as high as 1 eV. For the molecule in the junction, our results show, for all electrode geometries studied, that the thiol junctions are energetically more stable than their thiolate counterparts. Due to the fact that density functional theory (DFT) within the local density approximation (LDA) underestimates the energy difference between the lowest unoccupied molecular orbital and the highest occupied molecular orbital by several electron-volts, and that it does not capture the renormalization of the energy levels due to the image charge effect, the conductance of the Au-benzene-1,4-dithiol-Au junctions is overestimated. After taking into account corrections due to image charge effects by means of constrained-DFT calculations and electrostatic classical models, we apply a scissor operator to correct the DFT energy level positions, and calculate the transport properties of the thiol and thiolate molecular junctions as a function of the electrode separation. For the thiol junctions, we show that the conductance decreases as the electrode separation increases, whereas the opposite trend is found for the thiolate junctions. Both behaviors have been observed in experiments, therefore pointing to the possible coexistence of both thiol and thiolate junctions. Moreover, the corrected conductance values, for both thiol and thiolate, are up to two orders of magnitude smaller than those calculated with DFT-LDA. This brings the theoretical results in quantitatively good agreement with experimental data.

Steady-state properties of Josephson junctions with direct conductivity

International Nuclear Information System (INIS)

Zubkov, A.A.; Kupriyanov, M.Y.; Semenov, V.K.

1981-01-01

A new criterion for determining the kinetic inductance of Josephson junctions is introduced. The effects of temperature T, the critical temperatures of the superconducting electrodes T/sub c/1 and T/sub c/2, and the weak-link length on the kinetic inductance of ''dirty'' junctions with direct conductivity are analyzed within the framework of the Usadel equations. Numerical calculations show that both a large characteristic voltage and a nearly harmonic dependence of the current on the phase difference of the superconducting-electrode wave functions cannot be obtained by varying the junction parameters

Spin-transfer torque in spin filter tunnel junctions

KAUST Repository

Ortiz Pauyac, Christian

2014-12-08

Spin-transfer torque in a class of magnetic tunnel junctions with noncollinear magnetizations, referred to as spin filter tunnel junctions, is studied within the tight-binding model using the nonequilibrium Green\\'s function technique within Keldysh formalism. These junctions consist of one ferromagnet (FM) adjacent to a magnetic insulator (MI) or two FM separated by a MI. We find that the presence of the magnetic insulator dramatically enhances the magnitude of the spin-torque components compared to conventional magnetic tunnel junctions. The fieldlike torque is driven by the spin-dependent reflection at the MI/FM interface, which results in a small reduction of its amplitude when an insulating spacer (S) is inserted to decouple MI and FM layers. Meanwhile, the dampinglike torque is dominated by the tunneling electrons that experience the lowest barrier height. We propose a device of the form FM/(S)/MI/(S)/FM that takes advantage of these characteristics and allows for tuning the spin-torque magnitudes over a wide range just by rotation of the magnetization of the insulating layer.

Spin-transfer torque in spin filter tunnel junctions

KAUST Repository

Ortiz Pauyac, Christian; Kalitsov, Alan; Manchon, Aurelien; Chshiev, Mairbek

2014-01-01

Spin-transfer torque in a class of magnetic tunnel junctions with noncollinear magnetizations, referred to as spin filter tunnel junctions, is studied within the tight-binding model using the nonequilibrium Green's function technique within Keldysh formalism. These junctions consist of one ferromagnet (FM) adjacent to a magnetic insulator (MI) or two FM separated by a MI. We find that the presence of the magnetic insulator dramatically enhances the magnitude of the spin-torque components compared to conventional magnetic tunnel junctions. The fieldlike torque is driven by the spin-dependent reflection at the MI/FM interface, which results in a small reduction of its amplitude when an insulating spacer (S) is inserted to decouple MI and FM layers. Meanwhile, the dampinglike torque is dominated by the tunneling electrons that experience the lowest barrier height. We propose a device of the form FM/(S)/MI/(S)/FM that takes advantage of these characteristics and allows for tuning the spin-torque magnitudes over a wide range just by rotation of the magnetization of the insulating layer.

Neutron induced permanent damage in Josephson junctions

International Nuclear Information System (INIS)

Mueller, G.P.; Rosen, M.

1982-01-01

14 MeV neutron induced permanent changes in the critical current density of Josephson junctions due to displacement damage in the junction barrier are estimated using a worst case model and the binary collision simulation code MARLOWE. No likelihood of single event hard upsets is found in this model. It is estimated that a fluence of 10 18 -10 19 neutrons/cm 2 are required to change the critical current density by 5%

Spinal Gap Junction Channels in Neuropathic Pain

OpenAIRE

Jeon, Young Hoon; Youn, Dong Ho

2015-01-01

Damage to peripheral nerves or the spinal cord is often accompanied by neuropathic pain, which is a complex, chronic pain state. Increasing evidence indicates that alterations in the expression and activity of gap junction channels in the spinal cord are involved in the development of neuropathic pain. Thus, this review briefly summarizes evidence that regulation of the expression, coupling, and activity of spinal gap junction channels modulates pain signals in neuropathic pain states induced...

Junction temperature estimation for an advanced active power cycling test

DEFF Research Database (Denmark)

Choi, Uimin; Blaabjerg, Frede; Jørgensen, S.

2015-01-01

estimation method using on-state VCE for an advanced active power cycling test is proposed. The concept of the advanced power cycling test is explained first. Afterwards the junction temperature estimation method using on-state VCE and current is presented. Further, the method to improve the accuracy...... of the maximum junction temperature estimation is also proposed. Finally, the validity and effectiveness of the proposed method is confirmed by experimental results.......On-state collector-emitter voltage (VCE) is a good indicator to determine the wear-out condition of power device modules. Further, it is a one of the Temperature Sensitive Electrical Parameters (TSEPs) and thus can be used for junction temperature estimation. In this paper, the junction temperature...

Photovoltaic Cells Improvised With Used Bipolar Junction Transistors

International Nuclear Information System (INIS)

Akintayo, J. A

2002-01-01

The understanding of the underlying principle that the solar cell consists of a p-n junction is exploited to adapt the basic NPN or PNP Bipolar Junction Transistors (BJT) to serve as solar cells. In this mode the in improvised solar cell have employed just the emitter and the base sections with an intact emitter/base junction as the active PN area. The improvised devices tested screened and sorted are wired up in strings, blocks and modules. The photovoltaic modules realised tested as close replica of solar cells with output voltage following insolation level. Further work need be done on the modules to make them generate usable levels of output voltage and current

Tuning spin transport across two-dimensional organometallic junctions

Science.gov (United States)

Liu, Shuanglong; Wang, Yun-Peng; Li, Xiangguo; Fry, James N.; Cheng, Hai-Ping

2018-01-01

We study via first-principles modeling and simulation two-dimensional spintronic junctions made of metal-organic frameworks consisting of two Mn-phthalocyanine ferromagnetic metal leads and semiconducting Ni-phthalocyanine channels of various lengths. These systems exhibit a large tunneling magnetoresistance ratio; the transmission functions of such junctions can be tuned using gate voltage by three orders of magnitude. We find that the origin of this drastic change lies in the orbital alignment and hybridization between the leads and the center electronic states. With physical insight into the observed on-off phenomenon, we predict a gate-controlled spin current switch based on two-dimensional crystallines and offer general guidelines for designing spin junctions using 2D materials.

NbCN Josephson junctions with AlN barriers

International Nuclear Information System (INIS)

Thomasson, S.L.; Murduck, J.M.; Chan, H.

1991-01-01

This paper reports on niobium carbonitride (NbCN) Josephson circuits which operate over a wider temperature range than either niobium or niobium nitride circuits. Higher operating temperature places NbCN technology more comfortably within the range of closed cycle refrigerators, a key factor in aerospace applications. We have fabricated tunnel junctions from NbCN films with transition temperatures up to 18 Kelvin. High quality NbCN tunnel junction fabrication generally requires low stress films with roughness less than the barrier thickness (∼20 Angstrom). We have developed scanning tunneling microscopy as a tool for measuring and optimizing film smoothness. Junctions formed in situ with AIN tunneling barriers show reproducible I-V characteristics

Measurement of noise in YBCO bi-crystal junctions

International Nuclear Information System (INIS)

Kuznik, J.; Hao, L.; Macfarlane, J.C.; Pegrum, C.M.; Fischer, G.M.; Mygind, J.; Pedersen, N.F.; Beck, A.; Gross, R.

1993-01-01

This paper describes collaborative work between three institutions as part of an ESPRIT programme to fabricate and characterise grain-boundary junctions. Bi-crystal junctions were fabricated at Tuebingen on SrTiO 3 substrates with a 24 misorientation angle and a-b tilt. 200nm of c-axis YBCO was sputter-deposited using a hollow-cathode magnetron, and the films patterned with optical lithography and Ar ion beam etching (3). For test purposes junctions with a range of sizes were made, with widths between 4 and 20μm. These have been characterised for noise properties at 0.3 - 1kHz and 60kHz at Strathclyde, and at 70GHz at Lyngby. (orig.)

Resistance switch employing a simple metal nanogap junction

International Nuclear Information System (INIS)

Naitoh, Yasuhisa; Horikawa, Masayo; Abe, Hidekazu; Shimizu, Tetsuo

2006-01-01

In recent years, several researchers have reported the occurrence of reversible resistance switching effects in simple metal nanogap junctions. A large negative resistance is observed in the I-V characteristics of such a junction when high-bias voltages are applied. This phenomenon is characteristic behaviour on the nanometre scale; it only occurs for gap widths slightly under 13 nm. Furthermore, such a junction exhibits a non-volatile resistance hysteresis when the bias voltage is reduced very rapidly from a high level to around 0 V, and when the bias voltage is reduced slowly. This non-volatile resistance change occurs as a result of changes in the gap width between the metal electrodes, brought about by the applied bias voltage

Quantum Junction Solar Cells

KAUST Repository

Tang, Jiang; Liu, Huan; Zhitomirsky, David; Hoogland, Sjoerd; Wang, Xihua; Furukawa, Melissa; Levina, Larissa; Sargent, Edward H.

2012-01-01

-performing colloidal quantum dot rectifying devices reported to date have relied on a junction between a quantum-tuned absorber and a bulk material (e.g., TiO 2); however, quantum tuning of the absorber then requires complete redesign of the bulk acceptor, compromising

Investigation on Single-Molecule Junctions Based on Current–Voltage Characteristics

Directory of Open Access Journals (Sweden)

Yuji Isshiki

2018-02-01

Full Text Available The relationship between the current through an electronic device and the voltage across its terminals is a current–voltage characteristic (I–V that determine basic device performance. Currently, I–V measurement on a single-molecule scale can be performed using break junction technique, where a single molecule junction can be prepared by trapping a single molecule into a nanogap between metal electrodes. The single-molecule I–Vs provide not only the device performance, but also reflect information on energy dispersion of the electronic state and the electron-molecular vibration coupling in the junction. This mini review focuses on recent representative studies on I–Vs of the single molecule junctions that cover investigation on the single-molecule diode property, the molecular vibration, and the electronic structure as a form of transmission probability, and electronic density of states, including the spin state of the single-molecule junctions. In addition, thermoelectronic measurements based on I–Vs and identification of the charged carriers (i.e., electrons or holes are presented. The analysis in the single-molecule I–Vs provides fundamental and essential information for a better understanding of the single-molecule science, and puts the single molecule junction to more practical use in molecular devices.

Simulations of signal amplification and oscillations using a SNS junction

International Nuclear Information System (INIS)

Luiz, A.M.; Soares, V.; Nicolsky, R.

1998-01-01

A superconducting - normal metal - superconducting junction (SNS junction) may exhibit a low voltage negative differential resistance (LVNDR) effect over part of its current voltage characteristic (CVC). As the LVNDR effect is stable against a bias voltage at this CVC range, it should be possible to combine a SNS junction with conventional electronic circuits to obtain electronic devices such as mixers, amplifiers and oscillators. Making use of this remarkable effect, we show that an amplifier may be feasible by assembling a simple voltage divider made up of a SNS junction in series with a resistor. The amplifier circuit includes an adjustable DC voltage supply (the bias voltage) and an AC signal source with a given voltage. The SNS junction is connected in series with a resistor R. Choosing values of the load resistance R approximately equal to the module of the negative differential resistance (dV/dI), at the bias voltage, we may obtain large gains in this amplifier device. In order to get an oscillator, the SNS junction should be connected to a RLC tank circuit with a bias voltage adjusted in the range of the LVNDR region of its CVC. A power output of the order of one microwatt may be easily obtained. (orig.)

Superconductor-Insulator transition in a single Josephson junction

International Nuclear Information System (INIS)

Sonin, E.B.; PenttilA, J.S.; Parts, O.; Hakonen, P.J.; Paalanen, M.A.

1999-01-01

For ultra small Josephson junctions, when quantum effects become important, dissipative phase transition (DPT) has been predicted. The physical origin of this transition is the suppression of macroscopic quantum tunneling of the phase by tile interaction with dissipative quantum-mechanical environment. Macroscopic quantum tunneling destroys superconductivity of a junction, whereas suppression of tunneling restores superconductivity. Hence, this transition is often called a superconductor-insulator transition (SIT). SIT was predicted for various systems, but its detection in a single Josephson junction is of principal importance since it is the simplest system where this transition is expected, without any risk of being masked by other physical processes, as is possible in more complicated systems like regular or' random Josephson junction arrays. In this Letter we present results of our measurements on R = dV/dI vs. I curves, for a variety of single small isolated Josephson junctions, shunted and un shunted, with different values of capacitance C and normal state tunneling resistance RT. We have detected a crossover. between two types of RI-curves with an essentially different behavior at small currents. On the basis of this crossover, we are able to map out the whole phase diagram for a Josephson junction. The position of the observed phase boundary did not agree with that expected from the original theory. However, the theory revised to take into account a finite accuracy of our voltage measurements (viz., the minimum voltage which we are able to detect), explains well the observed phase diagram. Our important conclusion is that the concept of dissipative phase transition (DPT) and superconductor-insulator transition (SIT) are not completely identical as assumed before. Both are accompanied by the sign change of the thermo resistance, which is traditionally considered as a signature of SIT. Thus any DPT is SIT, but not vice versa. We argue that the real signature

The origin of double peak electric field distribution in heavily irradiated silicon detectors

CERN Document Server

Eremin, V; Li, Z

2002-01-01

The first observation of double peak (DP) electric field distribution in heavily neutron irradiated (>10 sup 1 sup 4 n/cm sup 2) semiconductor detectors has been published about 6 yr ago. However, this effect was not quantitatively analyzed up to now. The explanation of the DP electric field distribution presented in this paper is based on the properties of radiation induced deep levels in silicon, which act as deep traps, and on the distribution of the thermally generated free carrier concentration in the detector bulk. In the frame of this model, the earlier published considerations on the so-called 'double junction (DJ) effect' are discussed as well. The comparison of the calculated electric field profiles at different temperatures with the experimental ones allows one to determine a set of deep levels. This set of deep levels, and their charge filling status are essential to the value and the distribution of space charge in the space charge region in the range of 305-240 K, which is actual temperature ran...

MoRe-based and NbN-based tunnel junctions and their characteristics

International Nuclear Information System (INIS)

Shaternik, V.E.; Noskov, V.L.; Chubatyy, V.V.; Larkin, S.Yu.; Sizontov, V.M.; Miroshnikov, A.M.; Karmazin, A.A.

2007-01-01

Full text: Perspective [1] Josephson Mo-Re alloy-oxide-Pb, Mo-Re alloy-normal metal-oxide-Pb and Mo-Re alloy-normal metal-oxide- normal metal-Mo-Re alloy junctions have been fabricated and investigated. Thin (∼50-100 nm) MoRe superconducting films are deposited on Al 2 O 3 substrates by using a dc magnetron sputtering of MoRe target. Normal metal (Sn, Al) thin films are deposited on the MoRe films surfaces by thermal evaporation of metals in vacuum and oxidized to fabricate junctions oxide barriers. Quasiparticle I-V curves of the fabricated junctions were measured in wide range of voltages. To investigate a transparency spread for the fabricated junctions barriers the computer simulation of the measured quasiparticle I-V curves have been done in framework of the model of multiple Andreev reflections in double-barrier junction interfaces. It's demonstrated the investigated junctions can be described as highly asymmetric double-barrier Josephson junctions with great difference between the two barrier transparencies [2,3]. The result of the comparison of experimental quasiparticle I-V curves and calculated ones is proposed and discussed. Results of computer simulation of quasiparticles I-V curves of NbN-based junctions are presented and discussed. Also I-V curves of the fabricated junctions have been measured under microwave irradiation with 60 GHz frequency , clear Shapiro steps in the measured I-V curves were observed and discussed. (authors)

Reliability of twin-dependent triple junction distributions measured from a section plane

International Nuclear Information System (INIS)

Hardy, Graden B.; Field, David P.

2016-01-01

Numerous studies indicate polycrystalline triple junctions are independent microstructural features with distinct properties from their constituent grain boundaries. Despite the influence of triple junctions on material properties, it is impractical to characterize triple junctions on a large scale using current three-dimensional methods. This work demonstrates the ability to characterize twin-dependent triple junction distributions from a section plane by adopting a grain boundary plane stereology. The technique is validated through simulated distributions and simulated electron back-scatter diffraction (EBSD) data. Measures of validation and convergence are adopted to demonstrate the quantitative reliability of the technique as well as the convergence behavior of twin-dependent triple junction distributions. This technique expands the characterization power of EBSD and prepares the way for characterizing general triple junction distributions from a section plane. - Graphical abstract: The distribution of planes forming a triple junction with a given twin boundary is shown partially in the stereographic projections below from a given projection. The plot on the left shows the ideal/measured distribution and the plot on the right shows the distribution obtained from the stereological method presented here.

Nonlinearity in superconductivity and Josephson junctions

International Nuclear Information System (INIS)

Lazarides, N.

1995-01-01

Within the framework of the Bardeen, Cooper and Schrieffers (BCS) theory, the influence of anisotropy on superconducting states are investigated. Crystal anisotropy exists in un-conventional low temperature superconductors as e.g. U 1-x Th x Be 13 and in high temperature superconductors. Starting from a phenomenological pairing interaction of the electrons or holes, the BCS approach is used to derive a set of coupled nonlinear algebraic equations for the momentum dependent gap parameter. The emphasis is put on bifurcation phenomena between s-, d-wave and mixed s- and d-wave symmetry and the influence on measurable quantities as the electron specific heat, spin susceptibility and Josephson tunnelling. Pitch-fork and perturbed pitch-fork bifurcations have been found separating s- and d-wave superconducting states from mixed s- and d-wave states. The additional superconducting states give rise to jumps in the electron specific heat below the transition temperature. These jumps are rounded in the case of perturbed pitch-fork bifurcations. An experiment to measure the sign of the interlayer interaction using dc SQUIDS is suggested. The Ambegaokar-Baratoff formalism has been used for calculating the quasiparticle current and the two phase coherent tunnelling currents in a Josephson junction made of anisotropic superconductors. It is shown that anisotropy can lead to a reduction in the product of the normal resistance and the critical current. For low voltages across the junction the usual resistively shunted Josephson model can be used. Finally, bunching in long circular Josephson junctions and suppression of chaos in point junctions have been investigated. (au) 113 refs

Breaking into the epithelial apical–junctional complex — news from pathogen hackers

Science.gov (United States)

Vogelmann, Roger; Amieva, Manuel R; Falkow, Stanley; Nelson, W James

2012-01-01

The epithelial apical–junctional complex is a key regulator of cellular functions. In addition, it is an important target for microbial pathogens that manipulate the cell to survive, proliferate and sometimes persist within a host. Out of a myriad of potential molecular targets, some bacterial and viral pathogens have selected a subset of protein targets at the apical–junctional complex of epithelial cells. Studying how microbes use these targets also teaches us about the inherent physiological properties of host molecules in the context of normal junctional structure and function. Thus, we have learned that three recently uncovered components of the apical–junctional complex of the Ig superfamily — junctional adhesion molecule, Nectin and the coxsackievirus and adenovirus receptor — are important regulators of junction structure and function and represent critical targets of microbial virulence gene products. PMID:15037310

Charge transport in junctions between d-wave superconductors

International Nuclear Information System (INIS)

Barash, Y.S.; Galaktionov, A.V.; Zaikin, A.D.

1995-01-01

We develop a microscopic analysis of superconducting and dissipative currents in junctions between superconductors with d-wave symmetry of the order parameter. We study the proximity effect in such superconductors and show that for certain crystal orientations the superconducting order parameter can be essentially suppressed in the vicinity of a nontransparent specularly reflecting boundary. This effect strongly influences the value and the angular dependence of the dc Josephson current j S . At T∼T c it leads to a crossover between j S ∝T c -T and j S ∝(T c -T) 2 respectively for homogeneous and nonhomogeneous distribution of the order parameter in the vicinity of a tunnel junction. We show that at low temperatures the current-phase relation j S (cphi) for superconductor--normal-metal--superconductor junctions and short weak links between d-wave superconductors is essentially nonharmonic and contains a discontinuity at cphi=0. This leads to further interesting features of such systems which can be used for pairing symmetry tests in high-temperature superconductors (HTSC). We also investigated the low-temperature I-V curves of normal-metal--superconductor and superconductor-superconductor tunnel junctions and demonstrated that depending on the junction type and crystal orientation these curves show zero-bias anomalies I∝V 2 , I∝V 2 ln(1/V), and I∝V 3 caused by the gapless behavior of the order parameter in d-wave superconductors. Many of our results agree well with recent experimental findings for HTSC compounds

Structure and function of the tricuspid and bicuspid regurgitant aortic valve: an echocardiographic study.

Science.gov (United States)

Rönnerfalk, Mattias; Tamás, Éva

2015-07-01

The emerging new treatment options for aortic valve disease call for more sophisticated diagnostics. We aimed to describe the echocardiographic pathophysiology and characteristics of the purely regurgitant aortic valve in detail. Twenty-nine men, with chronic aortic regurgitation without concomitant heart disease referred for aortic valve intervention, underwent 2D transoesophageal echocardiographic (TEE) examination prior to surgery according to a previously published matrix. Measurements of the aortic valve apparatus in long and short axis view were made in systole and diastole and analysed off-line. The aortic valves were grouped as tricuspid (TAV) or bicuspid (BAV), and classified by regurgitation mechanism. Twenty-four examinations were eligible for analysis of which 13 presented TAV and 11 BAV. The regurgitation mechanism was classified as dilatation of the aorta in 6 cases, as prolapse in 11 cases and as poor cusp tissue quality or quantity in 7 cases. The ventriculo-aortic junction (VAJ) and valve opening were closely related (TAV r = 0.5, BAV r = 0.73) but no correlation was found between the VAJ and the maximal sinus diameter (maxSiD) or the sinotubular junction (STJ). However, the STJ and maxSiD were significantly related (TAV vs BAV: systole r = 0.9, r = 0.8; diastole r = 0.9, r = 0.7), forming an entity. The conjoined BAV cusps were shorter than the anterior cusps when closed (P = 0.002); the inter-commissural distances of the cusps in the BAV group were significantly different (P = 0.001 resp. 0.03) in both systole and diastole. The VAJ was independent of other aortic dimensions and should thereby be considered as a separate entity with influence on valve opening. The detailed 2D TEE measurements of this study add further important information to our knowledge about the function and echocardiographic anatomy of the pathological aortic valve and root either as a stand-alone examination or as a benchmark and complement to 3D echocardiography. This may

Towards quantum signatures in a swept-bias Josephson junction

Energy Technology Data Exchange (ETDEWEB)

Losert, Harald; Vogel, Karl; Schleich, Wolfgang P. [Institut fuer Quantenphysik and Center for Integrated Quantum Science and Technology (IQST), Universitaet Ulm, D-89069 Ulm (Germany)

2016-07-01

Josephson junctions are one of the best examples for the observation of macroscopic quantum tunneling. The phase difference in a current-biased Josephson junction behaves like the position of a particle in a tilted washboard potential. The escape of this phase-particle corresponds to the voltage switching of the associated junction. Quantum mechanically, the escape from the washboard potential can be explained as tunneling from the ground state, or an excited state. However, it has been shown, that in the case of periodic driving the experimental data for quantum mechanical key features, e.g. Rabi oscillations or energy level quantization, can be reproduced by a completely classical description. Motivated by this discussion, we investigate a swept-bias Josephson junction in the case of a large critical current. In particular, we contrast the switching current distributions resulting from a quantum mechanical and classical description of the time evolution.

Establishment of a universal and rational gene detection strategy through three-way junction-based remote transduction.

Science.gov (United States)

Tang, Yidan; Lu, Baiyang; Zhu, Zhentong; Li, Bingling

2018-01-21

The polymerase chain reaction and many isothermal amplifications are able to achieve super gene amplification. Unfortunately, most commonly-used transduction methods, such as dye staining and Taqman-like probing, still suffer from shortcomings including false signals or difficult probe design, or are incompatible with multi-analysis. Here a universal and rational gene detection strategy has been established by translating isothermal amplicons to enzyme-free strand displacement circuits via three-way junction-based remote transduction. An assistant transduction probe was imported to form a partial hybrid with the target single-stranded nucleic acid. After systematic optimization the hybrid could serve as an associative trigger to activate a downstream circuit detector via a strand displacement reaction across the three-way junction. By doing so, the detection selectivity can be double-guaranteed through both amplicon-transducer recognition and the amplicon-circuit reaction. A well-optimized circuit can be immediately applied to a new target detection through simply displacing only 10-12 nt on only one component, according to the target. More importantly, this property for the first time enables multi-analysis and logic-analysis in a single reaction, sharing a single fluorescence reporter. In an applicable model, trace amounts of Cronobacter and Enterobacteria genes have been clearly distinguished from samples with no bacteria or one bacterium, with ultra-high sensitivity and selectivity.

Hyperglycaemia and diabetes impair gap junctional communication among astrocytes.

Science.gov (United States)

Gandhi, Gautam K; Ball, Kelly K; Cruz, Nancy F; Dienel, Gerald A

2010-03-15

Sensory and cognitive impairments have been documented in diabetic humans and animals, but the pathophysiology of diabetes in the central nervous system is poorly understood. Because a high glucose level disrupts gap junctional communication in various cell types and astrocytes are extensively coupled by gap junctions to form large syncytia, the influence of experimental diabetes on gap junction channel-mediated dye transfer was assessed in astrocytes in tissue culture and in brain slices from diabetic rats. Astrocytes grown in 15-25 mmol/l glucose had a slow-onset, poorly reversible decrement in gap junctional communication compared with those grown in 5.5 mmol/l glucose. Astrocytes in brain slices from adult STZ (streptozotocin)-treated rats at 20-24 weeks after the onset of diabetes also exhibited reduced dye transfer. In cultured astrocytes grown in high glucose, increased oxidative stress preceded the decrement in dye transfer by several days, and gap junctional impairment was prevented, but not rescued, after its manifestation by compounds that can block or reduce oxidative stress. In sharp contrast with these findings, chaperone molecules known to facilitate protein folding could prevent and rescue gap junctional impairment, even in the presence of elevated glucose level and oxidative stress. Immunostaining of Cx (connexin) 43 and 30, but not Cx26, was altered by growth in high glucose. Disruption of astrocytic trafficking of metabolites and signalling molecules may alter interactions among astrocytes, neurons and endothelial cells and contribute to changes in brain function in diabetes. Involvement of the microvasculature may contribute to diabetic complications in the brain, the cardiovascular system and other organs.

Detectors for proton counting. Si-APD and scintillation detectors

International Nuclear Information System (INIS)

Kishimoto, Shunji

2008-01-01

Increased intensity of synchrotron radiation requests users to prepare photon pulse detectors having higher counting rates. As detectors for photon counting, silicon-avalanche photodiode (Si-APD) and scintillation detectors were chosen for the fifth series of detectors. Principle of photon detection by pulse and need of amplification function of the detector were described. Structure and working principle, high counting rate measurement system, bunch of electrons vs. counting rate, application example of NMR time spectroscopy measurement and comments for users were described for the Si-APD detector. Structure of scintillator and photomultiplier tube, characteristics of scintillator and performance of detector were shown for the NaI detector. Future development of photon pulse detectors was discussed. (T. Tanaka)

Construction of tunable peptide nucleic acid junctions.

Science.gov (United States)

Duan, Tanghui; He, Liu; Tokura, Yu; Liu, Xin; Wu, Yuzhou; Shi, Zhengshuang

2018-03-15

We report here the construction of 3-way and 4-way peptide nucleic acid (PNA) junctions as basic structural units for PNA nanostructuring. The incorporation of amino acid residues into PNA chains makes PNA nanostructures with more structural complexity and architectural flexibility possible, as exemplified by building 3-way PNA junctions with tunable nanopores. Given that PNA nanostructures have good thermal and enzymatic stabilities, they are expected to have broad potential applications in biosensing, drug delivery and bioengineering.

Craniovertebral junction stenosis in Lenz-Majewski syndrome

Energy Technology Data Exchange (ETDEWEB)

Mizuguchi, Koichi; Ishigro, Akira [National Center for Child Health and Development, Department of General Pediatrics and Interdisciplinary Medicine, Setagaya-ku, Tokyo (Japan); Miyazaki, Osamu [National Center for Child Health and Development, Department of Radiology, Tokyo (Japan); Nishimura, Gen [Tokyo Metropolitan Children' s Medical Center, Department of Pediatric Imaging, Tokyo (Japan)

2015-09-15

We report a girl with Lenz-Majewski syndrome associated with craniovertebral junction stenosis that led to communicating hydrocephalus and cervical myelopathy. The life-threatening complication was related to progressive craniovertebral hyperostosis that rapidly exacerbated during early childhood. Despite initial success of surgical intervention at 2 years of age, she developed apneic spells and died suddenly at age 5 years. Close monitoring for craniovertebral junction stenosis is essential to reduce morbidity and mortality in children with Lenz-Majewski syndrome. (orig.)

Differential diagnosis between early repolarization of athlete's heart and coved-type Brugada electrocardiogram.

Science.gov (United States)

Zorzi, Alessandro; Leoni, Loira; Di Paolo, Fernando M; Rigato, Ilaria; Migliore, Federico; Bauce, Barbara; Pelliccia, Antonio; Corrado, Domenico

2015-02-15

Early repolarization (ER) is typically observed in highly trained athletes as a physiologic consequence of increased vagal tone. The variant of anterior (V1 to V3) ER characterized by "domed" ST-segment elevation and negative T wave raises problems of differential diagnosis with the "coved-type" electrocardiographic pattern seen in Brugada syndrome (BS). This study was designed to identify electrocardiographic criteria for distinguishing athlete's ER from BS. The study compared the electrocardiographic tracings of 61 healthy athletes (80% men, median age 23 ± 8 years), showing "domed" ST-segment elevation and negative T wave in leads V1 to V3, with those of 92 consecutive age- and sex-matched BS patients with a "coved-type" electrocardiographic pattern. The electrocardiographic analysis focused on the ST-segment elevation at J point (STJ) and at 80 milliseconds after J point (ST₈₀). Athletes had a lower maximum amplitude of STJ (1.46 ± 0.7 vs 3.25 ± 0.6 mm, p 1) versus only 2 (3%) athletes (p <0.001). An upsloping ST-segment configuration (STJ/ST₈₀ <1) showed a sensitivity of 97%, a specificity of 100%, and a diagnostic accuracy of 98.7% for the diagnosis of ER. At multivariate analysis, STJ/ST₈₀ ratio remained the only independent predictor for ER (odds ratio 87, 95% confidence interval 19 to 357, p <0.001). In conclusion, the STJ/ST₈₀ ratio is a highly accurate electrocardiographic parameter for differential diagnosis between anterior ER of the athlete and BS. Our results may help in reducing the number of athletes who undergo expensive diagnostic workup or are unnecessarily disqualified from competition for changes that fall within the normal range of athlete's heart. Copyright © 2015 Elsevier Inc. All rights reserved.

Controlling formation of single-molecule junctions by electrochemical reduction of diazonium terminal groups.

Science.gov (United States)

Hines, Thomas; Díez-Pérez, Ismael; Nakamura, Hisao; Shimazaki, Tomomi; Asai, Yoshihiro; Tao, Nongjian

2013-03-06

We report controlling the formation of single-molecule junctions by means of electrochemically reducing two axialdiazonium terminal groups on a molecule, thereby producing direct Au-C covalent bonds in situ between the molecule and gold electrodes. We report a yield enhancement in molecular junction formation as the electrochemical potential of both junction electrodes approach the reduction potential of the diazonium terminal groups. Step length analysis shows that the molecular junction is significantly more stable, and can be pulled over a longer distance than a comparable junction created with amine anchoring bonds. The stability of the junction is explained by the calculated lower binding energy associated with the direct Au-C bond compared with the Au-N bond.

Negative tunnel magnetoresistance and spin transport in ferromagnetic graphene junctions

International Nuclear Information System (INIS)

Zou Jianfei; Jin Guojun; Ma Yuqiang

2009-01-01

We study the tunnel magnetoresistance (TMR) and spin transport in ferromagnetic graphene junctions composed of ferromagnetic graphene (FG) and normal graphene (NG) layers. It is found that the TMR in the FG/NG/FG junction oscillates from positive to negative values with respect to the chemical potential adjusted by the gate voltage in the barrier region when the Fermi level is low enough. Particularly, the conventionally defined TMR in the FG/FG/FG junction oscillates periodically from a positive to negative value with increasing the barrier height at any Fermi level. The spin polarization of the current through the FG/FG/FG junction also has an oscillating behavior with increasing barrier height, whose oscillating amplitude can be modulated by the exchange splitting in the ferromagnetic graphene.

Negative tunnel magnetoresistance and spin transport in ferromagnetic graphene junctions.

Science.gov (United States)

Zou, Jianfei; Jin, Guojun; Ma, Yu-Qiang

2009-03-25

We study the tunnel magnetoresistance (TMR) and spin transport in ferromagnetic graphene junctions composed of ferromagnetic graphene (FG) and normal graphene (NG) layers. It is found that the TMR in the FG/NG/FG junction oscillates from positive to negative values with respect to the chemical potential adjusted by the gate voltage in the barrier region when the Fermi level is low enough. Particularly, the conventionally defined TMR in the FG/FG/FG junction oscillates periodically from a positive to negative value with increasing the barrier height at any Fermi level. The spin polarization of the current through the FG/FG/FG junction also has an oscillating behavior with increasing barrier height, whose oscillating amplitude can be modulated by the exchange splitting in the ferromagnetic graphene.

Gap junction protein connexin-43 interacts directly with microtubules

NARCIS (Netherlands)

Giepmans, B N; Verlaan, I; Hengeveld, T; Janssen, H; Calafat, J; Falk, M M; Moolenaar, W H

2001-01-01

Gap junctions are specialized cell-cell junctions that mediate intercellular communication. They are composed of connexin proteins, which form transmembrane channels for small molecules [1, 2]. The C-terminal tail of connexin-43 (Cx43), the most widely expressed connexin member, has been implicated

Voltage-dependent conductance states of a single-molecule junction

DEFF Research Database (Denmark)

Wang, Y F; Néel, N; Kröger, J

2012-01-01

Ag–Sn-phthalocyanine–Ag junctions are shown to exhibit three conductance states. While the junctions are conductive at low bias, their impedance drastically increases above a critical bias. Two-level fluctuations occur at intermediate bias. These characteristics may be used to protect a nanoscale...

Superconducting proximity effect in mesoscopic superconductor/normal-metal junctions

CERN Document Server

Takayanagi, H; Toyoda, E

1999-01-01

The superconducting proximity effect is discussed in mesoscopic superconductor/normal-metal junctions. The newly-developed theory shows long-range phase-coherent effect which explaines early experimental results of giant magnetoresistance oscillations in an Andreev interferometer. The theory also shows that the proximity correction to the conductance (PCC) has a reentrant behavior as a function of energy. The reentrant behavior is systematically studied in a gated superconductor-semiconductor junction. A negative PCC is observed in the case of a weak coupling between the normal metal and the external reservoir. Phase coherent ac effect is also observed when rf is irradiated to the junction.

Building memristive and radiation hardness TiO{sub 2}-based junctions

Energy Technology Data Exchange (ETDEWEB)

Ghenzi, N., E-mail: n.ghenzi@gmail.com [Gerencia de Investigación y Aplicaciones, Comisión Nacional de Energía Atómica (Argentina); Rubi, D. [Gerencia de Investigación y Aplicaciones, Comisión Nacional de Energía Atómica (Argentina); ECyT, UNSAM, Martín de Irigoyen 3100, 1650 San Martín, Bs As (Argentina); Consejo Nacional de Investigaciones Científicas y Técnicas (CONICET) (Argentina); Mangano, E.; Gimenez, G. [Instituto Nacional de Tecnología Industrial (INTI) (Argentina); Lell, J. [Gerencia de Investigación y Aplicaciones, Comisión Nacional de Energía Atómica (Argentina); Zelcer, A. [Gerencia Química, Comisión Nacional de Energía Atómica (Argentina); ECyT, UNSAM, Martín de Irigoyen 3100, 1650 San Martín, Bs As (Argentina); Stoliar, P. [ECyT, UNSAM, Martín de Irigoyen 3100, 1650 San Martín, Bs As (Argentina); IMN, Université de Nantes, CNRS, 2 rue de la Houssinière, BP 32229, 44322 Nantes (France); and others

2014-01-01

We study micro-scale TiO{sub 2} junctions that are suitable to be used as resistive random-access memory nonvolatile devices with radiation hardness memristive properties. The fabrication and structural and electrical characterization of the junctions are presented. We obtained a retentivity of 10{sup 5} s, an endurance of 10{sup 4} cycles and reliable switching with short electrical pulses (time-width below 10 ns). Additionally, the devices were exposed to 25 MeV oxygen ions. Then, we performed electrical measurements comparing pristine and irradiated devices in order to check the feasibility of using these junctions as memory elements with memristive and radiation hardness properties. - Highlights: • We fabricated radiation hardness memristive metal insulator metal junctions. • We characterized the structural properties of the devices. • We showed the feasibility of the junctions as a non-volatile memory.

Microwave oscillator using arrays of long Josephson junctions

International Nuclear Information System (INIS)

Pagano, S.; Monaco, R.; Costabile, G.

1989-01-01

The authors report on measurements performed on integrated superconducting devices based on arrays of long Josephson tunnel junctions operating in the resonant fluxon oscillation regime (i.e. biased on the Zero Field Steps). The electromagnetic coupling among the junction causes a mutual phase-locking of the fluxon oscillations with a corresponding increase of the emitted power and a decrease of the signal linewidth. This phase-locked state can be controlled by means of an external dc bias current and magnetic field. The effect of the generated microwave signal has been observed on a small Josephson tunnel junction coupled to the array via a microstrip transmission line. The feasibility of the reported devices as local oscillators in an integrated microwave Josephson receiver is discussed

Filtering microfluidic bubble trains at a symmetric junction.

Science.gov (United States)

Parthiban, Pravien; Khan, Saif A

2012-02-07

We report how a nominally symmetric microfluidic junction can be used to sort all bubbles of an incoming train exclusively into one of its arms. The existence of this "filter" regime is unexpected, given that the junction is symmetric. We analyze this behavior by quantifying how bubbles modulate the hydrodynamic resistance in microchannels and show how speeding up a bubble train whilst preserving its spatial periodicity can lead to filtering at a nominally symmetric junction. We further show how such an asymmetric traffic of bubble trains can be triggered in symmetric geometries by identifying conditions wherein the resistance to flow decreases with an increase in the number of bubbles in the microchannel and derive an exact criterion to predict the same.

Nonlinear vs. bolometric radiation response and phonon thermal conductance in graphene-superconductor junctions

International Nuclear Information System (INIS)

Vora, Heli; Nielsen, Bent; Du, Xu

2014-01-01

Graphene is a promising candidate for building fast and ultra-sensitive bolometric detectors due to its weak electron-phonon coupling and low heat capacity. In order to realize a practical graphene-based bolometer, several important issues, including the nature of radiation response, coupling efficiency to the radiation and the thermal conductance need to be carefully studied. Addressing these issues, we present graphene-superconductor junctions as a viable option to achieve efficient and sensitive bolometers, with the superconductor contacts serving as hot electron barriers. For a graphene-superconductor device with highly transparent interfaces, the resistance readout in the presence of radio frequency radiation is dominated by non-linear response. On the other hand, a graphene-superconductor tunnel device shows dominantly bolometric response to radiation. For graphene devices fabricated on SiO 2 substrates, we confirm recent theoretical predictions of T 2 temperature dependence of phonon thermal conductance in the presence of disorder in the graphene channel at low temperatures

A New Virtual Point Detector Concept for a HPGe detector

International Nuclear Information System (INIS)

Byun, Jong In; Yun, Ju Yong

2009-01-01

For last several decades, the radiation measurement and radioactivity analysis techniques using gamma detectors have been well established. Especially , the study about the detection efficiency has been done as an important part of gamma spectrometry. The detection efficiency depends strongly on source-to-detector distance. The detection efficiency with source-to-detector distance can be expressed by a complex function of geometry and physical characteristics of gamma detectors. In order to simplify the relation, a virtual point detector concept was introduced by Notea. Recently, further studies concerning the virtual point detector have been performed. In previous other works the virtual point detector has been considered as a fictitious point existing behind the detector end cap. However the virtual point detector position for the front and side of voluminous detectors might be different due to different effective central axis of them. In order to more accurately define the relation, therefore, we should consider the virtual point detector for the front as well as side and off-center of the detector. The aim of this study is to accurately define the relation between the detection efficiency and source-to-detector distance with the virtual point detector. This paper demonstrates the method to situate the virtual point detectors for a HPGe detector. The new virtual point detector concept was introduced for three area of the detector and its characteristics also were demonstrated by using Monte Carlo Simulation method. We found that the detector has three virtual point detectors except for its rear area. This shows that we should consider the virtual point detectors for each area when applying the concept to radiation measurement. This concept can be applied to the accurate geometric simplification for the detector and radioactive sources.

Creation of stable molecular junctions with a custom-designed scanning tunneling microscope.

Science.gov (United States)

Lee, Woochul; Reddy, Pramod

2011-12-02

The scanning tunneling microscope break junction (STMBJ) technique is a powerful approach for creating single-molecule junctions and studying electrical transport in them. However, junctions created using the STMBJ technique are usually mechanically stable for relatively short times (scanning tunneling microscope that enables the creation of metal-single molecule-metal junctions that are mechanically stable for more than 1 minute at room temperature. This stability is achieved by a design that minimizes thermal drift as well as the effect of environmental perturbations. The utility of this instrument is demonstrated by performing transition voltage spectroscopy-at the single-molecule level-on Au-hexanedithiol-Au, Au-octanedithiol-Au and Au-decanedithiol-Au junctions.

75 FR 76294 - Radio Broadcasting Services: Pacific Junction, IA

Science.gov (United States)

2010-12-08

... FEDERAL COMMUNICATIONS COMMISSION 47 CFR Part 73 [DA 10-2236; MB Docket No. 10-108] Radio Broadcasting Services: Pacific Junction, IA AGENCY: Federal Communications Commission. ACTION: Final rule. SUMMARY: The staff deletes FM Channel 299C2 at Pacific Junction, Iowa, because the record in this...

Effect of quasi-particle injection on retrapping current of Josephson junction

OpenAIRE

Utsunomiya, K.; Yagi, Ryuta

2006-01-01

We report that the energy dissipation of Josephson junction can be controlled by quasi-particle injection. We fabricated two Josephson junctions on the narrow aluminum wire and controlled the energy dissipation of one junction by quasi-particle injection from the other. We observed the retrapping current increased as the quasi-particles were injected. We also studied the heating effect of our measurement.

Transmutation detectors

Energy Technology Data Exchange (ETDEWEB)

Viererbl, L., E-mail: vie@ujv.c [Research Centre Rez Ltd. (Czech Republic); Nuclear Research Institute Rez plc (Czech Republic); Lahodova, Z. [Research Centre Rez Ltd. (Czech Republic); Nuclear Research Institute Rez plc (Czech Republic); Klupak, V. [Nuclear Research Institute Rez plc (Czech Republic); Sus, F. [Research Centre Rez Ltd. (Czech Republic); Nuclear Research Institute Rez plc (Czech Republic); Kucera, J. [Research Centre Rez Ltd. (Czech Republic); Nuclear Physics Institute, Academy of Sciences of the Czech Republic (Czech Republic); Kus, P.; Marek, M. [Research Centre Rez Ltd. (Czech Republic); Nuclear Research Institute Rez plc (Czech Republic)

2011-03-11

We have designed a new type of detectors, called transmutation detectors, which can be used primarily for neutron fluence measurement. The transmutation detector method differs from the commonly used activation detector method in evaluation of detector response after irradiation. Instead of radionuclide activity measurement using radiometric methods, the concentration of stable non-gaseous nuclides generated by transmutation in the detector is measured using analytical methods like mass spectrometry. Prospective elements and nuclear reactions for transmutation detectors are listed and initial experimental results are given. The transmutation detector method could be used primarily for long-term measurement of neutron fluence in fission nuclear reactors, but in principle it could be used for any type of radiation that can cause transmutation of nuclides in detectors. This method could also be used for measurement in accelerators or fusion reactors.

Transmutation detectors

International Nuclear Information System (INIS)

Viererbl, L.; Lahodova, Z.; Klupak, V.; Sus, F.; Kucera, J.; Kus, P.; Marek, M.

2011-01-01

We have designed a new type of detectors, called transmutation detectors, which can be used primarily for neutron fluence measurement. The transmutation detector method differs from the commonly used activation detector method in evaluation of detector response after irradiation. Instead of radionuclide activity measurement using radiometric methods, the concentration of stable non-gaseous nuclides generated by transmutation in the detector is measured using analytical methods like mass spectrometry. Prospective elements and nuclear reactions for transmutation detectors are listed and initial experimental results are given. The transmutation detector method could be used primarily for long-term measurement of neutron fluence in fission nuclear reactors, but in principle it could be used for any type of radiation that can cause transmutation of nuclides in detectors. This method could also be used for measurement in accelerators or fusion reactors.

Multicentre dosimetric comparison of photon-junctioning techniques in head and neck radiotherapy

International Nuclear Information System (INIS)

Kron, T.

2003-01-01

Because many head and neck radiotherapy treatment techniques rely on a junction between X-ray fields, it was the aim of the present study to investigate the use of different junctioning techniques and the affect on the dose across the junction. Techniques in use at nine radiotherapy centres in Australia were investigated using thermoluminescence dosimetry (TLD). The techniques could broadly be divided into two groups: (i) use of the light field to match the fields after moving the patient; and (ii) use of asymmetric collimation to create a single isocentre located in the junction. The mean dose at the junction and its reproducibility was studied in five consecutive treatments in each centre using 25 TLD chips placed throughout the junction in an anthropomorphic phantom. There was a tendency for the mono-isocentric technique to deliver a lower, more accurate mean dose at the junction (Group I: 1.22 Gy (n = 8) vs Group II: 0.96 Gy (n = 5) for 1 Gy planned, some centres contributed to both technique) with greater reproducibility (Group I: 9.6%, Group II: 5.1 % of the mean dose). We conclude that a mono-isocentric treatment technique has the potential to deliver a more accurate and reproducible dose distribution at the field junction of photon beams in head and neck treatment. Copyright (2003) Blackwell Science Pty Ltd

Design and fabrication of a novel self-powered solid-state neutron detector

Science.gov (United States)

LiCausi, Nicholas

There is a strong interest in intercepting special nuclear materials (SNM) at national and international borders and ports for homeland security applications. Detection of SNM such as U and Pu is often accomplished by sensing their natural or induced neutron emission. Such detector systems typically use thermal neutron detectors inside a plastic moderator. In order to achieve high detection efficiency gas filled detectors are often used; these detectors require high voltage bias for operation, which complicates the system when tens or hundreds of detectors are deployed. A better type of detector would be an inexpensive solid-state detector that can be mass-produced like any other computer chip. Research surrounding solid-state detectors has been underway since the late 1990's. A simple solid-state detector employs a planar solar-cell type p-n junction and a thin conversion material that converts incident thermal neutrons into detectable alpha-particles and 7Li ions. Existing work has typically used 6LiF or 10B as this conversion layer. Although a simple planar detector can act as a highly portable, low cost detector, it is limited to relatively low detection efficiency (˜10%). To increase the efficiency, 3D perforated p-i-n silicon devices were proposed. To get high efficiency, these detectors need to be biased, resulting in increased leakage current and hence detector noise. In this research, a new type of detector structure was proposed, designed and fabricated. Among several detector structures evaluated, a honeycomb-like silicon p-n structure was selected, which is filled with natural boron as the neutron converter. A silicon p+-n diode formed on the thin silicon wall of the honeycomb structure detects the energetic alpha-particles emitted from the boron conversion layer. The silicon detection layer is fabricated to be fully depleted with an integral step during the boron filling process. This novel feature results in a simplified fabrication process. Three

The string-junction picture of multiquark states: an update

CERN Document Server

Rossi, Giancarlo

2016-06-07

We recall and update, both theoretically and phenomenologically, our (nearly) forty-years-old proposal of a string-junction as a necessary complement to the conventional classification of hadrons based just on their quark-antiquark constituents. In that proposal single (though in general metastable) hadronic states are associated with "irreducible" gauge-invariant operators consisting of Wilson lines (visualized as strings of color flux tubes) that may either end on a quark or an antiquark, or annihilate in triplets at a junction $J$ or an anti-junction $\\bar{J}$. For the junction-free sector (ordinary $q\\, \\bar{q}$ mesons and glueballs) the picture is supported by large-$N$ (number of colors) considerations as well as by a lattice strong-coupling expansion. Both imply the famous OZI rule suppressing quark-antiquark annihilation diagrams. For hadrons with $J$ and/or $\\bar{J}$ constituents the same expansions support our proposal, including its generalization of the OZI rule to the suppression of $J-\\bar{J}$ a...

The physical analysis on electrical junction of junctionless FET

Directory of Open Access Journals (Sweden)

Lun-Chun Chen

2017-02-01

Full Text Available We propose the concept of the electrical junction in a junctionless (JL field-effect-transistor (FET to illustrate the transfer characteristics of the JL FET. In this work, nanowire (NW junctionless poly-Si thin-film transistors are used to demonstrate this conception of the electrical junction. Though the dopant and the dosage of the source, of the drain, and of the channel are exactly the same in the JL FET, the transfer characteristics of the JL FET is similar to these of the conventional inversion-mode FET rather than these of a resistor, which is because of the electrical junction at the boundary of the gate and the drain in the JL FET. The electrical junction helps us to understand the JL FET, and also to explain the superior transfer characteristic of the JL FET with the gated raised S/D (Gout structure which reveals low drain-induced-barrier-lowering (DIBL and low breakdown voltage of ion impact ionization.

Molecular electronics: some views on transport junctions and beyond.

Science.gov (United States)

Joachim, Christian; Ratner, Mark A

2005-06-21

The field of molecular electronics comprises a fundamental set of issues concerning the electronic response of molecules as parts of a mesoscopic structure and a technology-facing area of science. We will overview some important aspects of these subfields. The most advanced ideas in the field involve the use of molecules as individual logic or memory units and are broadly based on using the quantum state space of the molecule. Current work in molecular electronics usually addresses molecular junction transport, where the molecule acts as a barrier for incoming electrons: This is the fundamental Landauer idea of "conduction as scattering" generalized to molecular junction structures. Another point of view in terms of superexchange as a guiding mechanism for coherent electron transfer through the molecular bridge is discussed. Molecules generally exhibit relatively strong vibronic coupling. The last section of this overview focuses on vibronic effects, including inelastic electron tunneling spectroscopy, hysteresis in junction charge transport, and negative differential resistance in molecular transport junctions.

Microscopic tunneling theory of long Josephson junctions

DEFF Research Database (Denmark)

Grønbech-Jensen, N.; Hattel, Søren A.; Samuelsen, Mogens Rugholm

1992-01-01

We present a numerical scheme for solving a nonlinear partial integro-differential equation with nonlocal time dependence. The equation describes the dynamics in a long Josephson junction modeled by use of the microscopic theory for tunneling between superconductors. We demonstrate that the detai......We present a numerical scheme for solving a nonlinear partial integro-differential equation with nonlocal time dependence. The equation describes the dynamics in a long Josephson junction modeled by use of the microscopic theory for tunneling between superconductors. We demonstrate...

Mechanically controllable break junctions for molecular electronics.

Science.gov (United States)

Xiang, Dong; Jeong, Hyunhak; Lee, Takhee; Mayer, Dirk

2013-09-20

A mechanically controllable break junction (MCBJ) represents a fundamental technique for the investigation of molecular electronic junctions, especially for the study of the electronic properties of single molecules. With unique advantages, the MCBJ technique has provided substantial insight into charge transport processes in molecules. In this review, the techniques for sample fabrication, operation and the various applications of MCBJs are introduced and the history, challenges and future of MCBJs are discussed. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Bar dynamics and channel junctions in scale-experiments of estuaries

Science.gov (United States)

Leuven, J.; Braat, L.; van Dijk, W. M.; Haas, T. D.; Kleinhans, M. G.

2017-12-01

The evolution of channels and bars in estuaries has high socio-economic relevance, with strong implications for navigation, dredging and ecology. However, the spatial and temporal evolution of channels and bars in estuaries is poorly understood. Here, we study feedbacks of bar morphodynamics on widening and narrowing of estuaries. Therefore, we conducted an experiment in a 20 m long and 3 m wide tilting flume (the 'Metronome'), in which we monitored the evolution of a self-formed estuary that developed from an intial straight channel into an irregular planform with multiple channels, braided bars and a meandering ebb channel. At locations where the estuary width is confined, major channel junctions occur, while the zones between the junctions are characterised by high braiding indices, periodically migrating channels and a relatively large estuary width. The junction locations were forced by the in- and outflow locations on the sides of the ebb-tidal delta and at the location where the channel pattern transitions from multiple channels into a single channel. In the middle of the estuary, self-confinement occurred by sedimentation on the sides of the estuary, which caused another major junction. The channel orientation at the junctions steers the morphodynamics of channels and bars immediately landward and seaward, because the orientation of inflow from the ebb-tidal delta and landward river perpetually varies. In natural systems major junction locations are mostly forced by inherited geology or human engineering. However, this study concludes that even without external forcing, the estuary planform will not converge to an ideal shape but will self-confine at major junctions and widens in the adjacent zones, resulting in an irregular planform shape.

T-junction cross-flow mixing with thermally driven density stratification

Energy Technology Data Exchange (ETDEWEB)

Kickhofel, John, E-mail: jkickhofel@gmail.com [Laboratory of Nuclear Energy Systems, ETH Zurich, Sonneggstrasse 3, 8057 Zurich (Switzerland); Prasser, Horst-Michael, E-mail: prasser@lke.mavt.ethz.ch [Laboratory of Nuclear Energy Systems, ETH Zurich, Sonneggstrasse 3, 8057 Zurich (Switzerland); Selvam, P. Karthick, E-mail: karthick.selvam@ike.uni-stuttgart.de [Institute of Nuclear Technology and Energy Systems (IKE), University of Stuttgart, Pfaffenwaldring 31, 70569 Stuttgart (Germany); Laurien, Eckart, E-mail: eckart.laurien@ike.uni-stuttgart.de [Institute of Nuclear Technology and Energy Systems (IKE), University of Stuttgart, Pfaffenwaldring 31, 70569 Stuttgart (Germany); Kulenovic, Rudi, E-mail: rudi.kulenovic@ike.uni-stuttgart.de [Institute of Nuclear Technology and Energy Systems (IKE), University of Stuttgart, Pfaffenwaldring 31, 70569 Stuttgart (Germany)

2016-12-01

Highlights: • Mesh sensor for realistic nuclear thermal hydraulic scenarios is demonstrated. • Flow temperature behavior across a wide range of Richardson numbers measured. • Upstream stratified flow in the T-junction results in a thermal shock scenario. • Large, stable near-wall thermal gradients exist in spite of turbulent flows. - Abstract: As a means of further elucidating turbulence- and stratification-driven thermal fatigue in the vicinity of T-junctions in nuclear power plants, a series of experiments have been conducted at the high temperature high pressure fluid–structure interaction T-junction facility of the University of Stuttgart with novel fluid measurement instrumentation. T-junction mixing with large fluid temperature gradients results in complex flow behavior, the result of density driven effects. Deionized water mixing at temperature differences of up to 232 K at 7 MPa pressure have been investigated in a T-junction with main pipe diameter 71.8 mm and branch line diameter 38.9 mm. The experiments have been performed with fixed flow rates of 0.4 kg/s in the main pipe and 0.1 kg/s in the branch line. A novel electrode-mesh sensor compatible with the DN80 PN100 pipeline upstream and downstream of the T-junction has been utilized as a temperature sensor providing a high density information in the pipe cross-section in both space and time. Additionally, in-flow and in-wall thermocouples quantify the damping of thermal fluctuations by the wall material. The results indicate that large inflow temperature differences lead to strong turbulence damping, and ultimately stable stratification extending both downstream and upstream of the T-junction resulting in large local thermal gradients.

Realization of φ Josephson junctions with a ferromagnetic interlayer

International Nuclear Information System (INIS)

Sickinger, Hanna Sabine

2014-01-01

In this thesis, φ Josephson junctions based on 0-π junctions with a ferromagnetic interlayer are studied. Josephson junctions (JJs) with a ferromagnetic interlayer can have a phase drop of 0 or π in the ground state, depending on the thickness of the ferromagnet (0 JJs or π JJs). Also, 0-π JJs can be realized, where one segment of the junction (if taken separately) is in the 0 state, while the other segment is in the π state. One can use these π Josephson junctions as a device in superconducting circuits, where it provides a constant phase shift, i.e., it acts as a π phase battery. A generalization of a π JJ is a φ JJ, which has the phase ±φ in the ground state. The value of φ can be chosen by design and tuned in the interval 0<φ<π. The φ JJs used in this experiment were fabricated as 0-π JJs with asymmetric current densities in the 0 and π facets. This system can be described by an effective current-phase relation which is tunable by an externally applied magnetic field. The first experimental evidence of such a φ JJ is presented in this thesis. In particular it is demonstrated that (a) a φ JJ has two ground states +φ and -φ, (b) the unknown state can be detected (read out) by measuring the critical current I c (I c+ or I c- ), and (c) a particular state can be prepared by applying a magnetic field or a special bias sweep sequence. These properties of a φ JJ can be utilized, for example, as a memory cell (classical bit). Furthermore, a φ Josephson junction can be used as a deterministic ratchet. This is due to the tunable asymmetry of the potential that can be changed by the external magnetic field. Rectification curves are observed for the overdamped and the underdamped case. Moreover, experimental data of the retrapping process of the phase of a φ Josephson junction depending on the temperature is presented.

Andreev reflexion studies on planar hybrid SNS-junctions based on 122-thin films

Energy Technology Data Exchange (ETDEWEB)

Doering, Sebastian; Schmidt, Stefan; Schmidl, Frank; Tympel, Volker; Seidel, Paul [Friedrich-Schiller-Universitaet Jena, Institut fuer Festkoerperphysik, Helmholtzweg 5, Jena (Germany); Haindl, Silvia; Kurth, Fritz; Iida, Kazumasa; Holzapfel, Bernhard [IFW Dresden, Institut fuer Metallische Werkstoffe, 01069 Dresden (Germany)

2012-07-01

To investigate the properties of iron-based superconductors, we prepared hybrid junctions in thin film technique. Therefore two geometries were prepared, a planar SNS-junction and an edge junction. The base electrode was made of Ba(Fe{sub 0.9}Co{sub 0.1}){sub 2}As{sub 2} thin films, a sputtered gold layer acts as normal barrier for the planar junction and for the counter electrode we used the conventional superconductor lead. We measured the electrical properties of each electrode, as well as the junctions itself. To obtain information about the order parameter symmetry, we show the differential conductance and compare with different variations of an extended BTK-model. We show differences and commonalities between the results of both junction geometries.

The Control of Junction Flows

National Research Council Canada - National Science Library

Smith, Charles

1997-01-01

An experimental study of the effects of spatially-limited (i.e. localized) surface suction on unsteady laminar and turbulent junction flows was performed using hydrogen bubble flow visualization and Particle Image Velocimetry (PIV...

Spin-flip effects on the supercurrent through mesoscopic superconducting junctions

International Nuclear Information System (INIS)

Pan Hui; Lin Tsunghan

2005-01-01

We investigate the spin-flip effects on the Andreev bound states and the supercurrent in a superconductor/quantum-dot/superconductor system, theoretically. The spin-flip scattering in the quantum dot can reverse the supercurrent flowing through the system, which results in a π-junction transition. By controlling the energy level of the quantum dot, the π-junction transition can be caused to occur again. The two mechanisms of the π-junction transitions are interpreted within the picture of Andreev bound states

Electron Transport through Porphyrin Molecular Junctions

Science.gov (United States)

Zhou, Qi

The goal of this work is to study the properties that would affect the electron transport through a porphyrin molecular junction. This work contributes to the field of electron transport in molecular junctions in the following 3 aspects. First of all, by carrying out experiments comparing the conductance of the iron (III) porphyrin (protected) and the free base porphyrin (protected), it is confirmed that the molecular energy level broadening and shifting occurs for porphyrin molecules when coupled with the metal electrodes, and this level broadening and shifting plays an important role in the electron transport through molecular junctions. Secondly, by carrying out an in-situ deprotection of the acetyl-protected free base porphyrin molecules, it is found out that the presence of acetyl groups reduces the conductance. Thirdly, by incorporating the Matrix-assisted laser desorption/ionization (MALDI) spectrum and the in-situ deprotection prior to formation of molecular junctions, it allows a more precise understanding of the molecules involved in the formation of molecular junctions, and therefore allows an accurate analysis of the conductance histogram. The molecules are prepared by self-assembly and the junctions are formed using a Scanning Tunneling Microscopy (STM) molecular break junction technique. The porphyrin molecules are characterized by MALDI in solution before self-assembly to a gold/mica substrate. The self-assembled monolayers (SAMs) of porphyrins on gold are characterized by Ultraviolet-visible (UV-Vis) reflection spectroscopy to confirm that the molecules are attached to the substrate. The SAMs are then characterized by Angle-Resolved X-ray photoelectron spectroscopy (ARXPS) to determine the thickness and the average molecular orientation of the molecular layer. The electron transport is measured by conductance-displacement (G-S) experiments under a given bias (-0.4V). The conductance value of a single molecule is identified by a statistical analysis

Gap junctions and epileptic seizures--two sides of the same coin?

Directory of Open Access Journals (Sweden)

Vladislav Volman

Full Text Available Electrical synapses (gap junctions play a pivotal role in the synchronization of neuronal ensembles which also makes them likely agonists of pathological brain activity. Although large body of experimental data and theoretical considerations indicate that coupling neurons by electrical synapses promotes synchronous activity (and thus is potentially epileptogenic, some recent evidence questions the hypothesis of gap junctions being among purely epileptogenic factors. In particular, an expression of inter-neuronal gap junctions is often found to be higher after the experimentally induced seizures than before. Here we used a computational modeling approach to address the role of neuronal gap junctions in shaping the stability of a network to perturbations that are often associated with the onset of epileptic seizures. We show that under some circumstances, the addition of gap junctions can increase the dynamical stability of a network and thus suppress the collective electrical activity associated with seizures. This implies that the experimentally observed post-seizure additions of gap junctions could serve to prevent further escalations, suggesting furthermore that they are a consequence of an adaptive response of the neuronal network to the pathological activity. However, if the seizures are strong and persistent, our model predicts the existence of a critical tipping point after which additional gap junctions no longer suppress but strongly facilitate the escalation of epileptic seizures. Our results thus reveal a complex role of electrical coupling in relation to epileptiform events. Which dynamic scenario (seizure suppression or seizure escalation is ultimately adopted by the network depends critically on the strength and duration of seizures, in turn emphasizing the importance of temporal and causal aspects when linking gap junctions with epilepsy.

Detector Control System for the ATLAS Forward Proton detector

CERN Document Server

Czekierda, Sabina; The ATLAS collaboration

2017-01-01

The ATLAS Forward Proton (AFP) is a forward detector using a Roman Pot technique, recently installed in the LHC tunnel. It is aiming at registering protons that were diffractively or electromagnetically scattered in soft and hard processes. Infrastructure of the detector consists of hardware placed both in the tunnel and in the control room USA15 (about 330 meters from the Roman Pots). AFP detector, like the other detectors of the ATLAS experiment, uses the Detector Control System (DCS) to supervise the detector and to ensure its safe and coherent operation, since the incorrect detector performance may influence the physics results. The DCS continuously monitors the detector parameters, subset of which is stored in data bases. Crucial parameters are guarded by alarm system. A detector representation as a hierarchical tree-like structure of well-defined subsystems built with the use of the Finite State Machine (FSM) toolkit allows for overall detector operation and visualization. Every node in the hierarchy is...