Current noise in tunnel junctions

Energy Technology Data Exchange (ETDEWEB)

Frey, Moritz; Grabert, Hermann [Physikalisches Institut, Universitaet Freiburg, Hermann-Herder-Strasse 3, 79104, Freiburg (Germany)

2017-06-15

We study current fluctuations in tunnel junctions driven by a voltage source. The voltage is applied to the tunneling element via an impedance providing an electromagnetic environment of the junction. We use circuit theory to relate the fluctuations of the current flowing in the leads of the junction with the voltage fluctuations generated by the environmental impedance and the fluctuations of the tunneling current. The spectrum of current fluctuations is found to consist of three parts: a term arising from the environmental Johnson-Nyquist noise, a term due to the shot noise of the tunneling current and a third term describing the cross-correlation between these two noise sources. Our phenomenological theory reproduces previous results based on the Hamiltonian model for the dynamical Coulomb blockade and provides a simple understanding of the current fluctuation spectrum in terms of circuit theory and properties of the average current. Specific results are given for a tunnel junction driven through a resonator. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Effect of Abrikosov vortices on Josephson junction currents in high temperature superconductors

International Nuclear Information System (INIS)

Mitchell, E.; Mueller, K.-H.

2000-01-01

Full text: The current-carrying capacity of high temperature superconductors (HTS) is limited by the weak links which form between individual grains. We investigate the role of Abrikosov vortices (AV) and inhomogeneities at the intergrain boundary by examining the high magnetic field characteristics of HTS thin film grain boundary junctions. We model the effects of junction inhomogeneity, AV's and vortex pinning by solving the inhomogeneous London equation. The calculations show that both inhomogeneities and the presence of AV's improve the current-carrying capacity across grain boundaries at high magnetic fields. Our experimental measurements of the irreversibility of the junction critical current density J c (H a ) find good agreement with the model

Current-voltage characteristic of a Josephson junction with randomly distributed Abrikosov vortices

International Nuclear Information System (INIS)

Fistul, M.V.; Giuliani, G.F.

1997-01-01

We have developed a theory of the current-voltage characteristic of a Josephson junction in the presence of randomly distributed, pinned misaligned Abrikosov vortices oriented perpendicularly to the junction plane. Under these conditions the Josephson phase difference var-phi acquires an interesting stochastic dependence on the position in the plane of the junction. In this situation it is possible to define an average critical current which is determined by the spatial correlations of this function. Due to the inhomogeneity, we find that for finite voltage bias the electromagnetic waves propagating in the junction display a broad spectrum of wavelengths. This is at variance with the situation encountered in homogeneous junctions. The amplitude of these modes is found to decrease as the bias is increased. We predict that the presence of these excitations is directly related to a remarkable feature in the current-voltage characteristic. The dependence of the position and the magnitude of this feature on the vortex concentration has been determined. copyright 1997 The American Physical Society

Similarities between normal- and super-currents in topological insulator magnetic tunnel junctions

International Nuclear Information System (INIS)

Soodchomshom, Bumned; Chantngarm, Peerasak

2010-01-01

This work compares the normal-current in a NM/Fi/NM junction with the super-current in a SC/Fi/SC junction, where both are topological insulator systems. NM and Fi are normal region and ferromagnetic region of thickness d with exchange energy m playing a role of the mass of the Dirac electrons and with the gate voltage V G , respectively. SC is superconducting region induced by a s-wave superconductor. We show that, interestingly, the critical super-current passing through a SC/Fi/SC junction behaves quite similar to the normal-current passing through a NM/Fi/NM junction. The normal-current and super-current exhibit N-peak oscillation, found when currents are plotted as a function of the magnetic barrier strength χ ∼ md/hv F . With the barrier strength Z ∼ V G d/hv F , the number of peaks N is determined through the relation Z ∼ Nπ + σπ (with 0 < σ≤1 for χ < Z). The normal- and the super-currents also exhibit oscillating with the same height for all of peaks, corresponding to the Dirac fermion tunneling behavior. These anomalous oscillating currents due to the interplay between gate voltage and magnetic field in the barrier were not found in graphene-based NM/Fi/NM and SC/Fi/SC junctions. This is due to the different magnetic effect between the Dirac fermions in topological insulator and graphene.

Critical current of high Tc superconducting Bi223/Ag tapes

NARCIS (Netherlands)

Huang, Y.; ten Haken, Bernard; ten Kate, Herman H.J.

1998-01-01

The magnetic field dependence of the critical current of various high Tc superconducting Bi2223/Ag tapes indicates that the transport current is carried through two paths: one is through weakly-linked grain boundaries (Josephson junctions); another is through well-connected grains. The critical

Quasiparticle current in superconductor-semiconductor-superconductor junctions

International Nuclear Information System (INIS)

Tartakovskij, A.V.; Fistul', M.V.

1988-01-01

It is shown that the quasiparticle current in a superconductor-semiconductor-superconductor junction may significantly increase as a result of resonant passage of the quasiparticle along particular trajectories from periodically situated localized centers. A prediction of the theory is that with increasing junction resistance there should be a change from an excessive current to a insufficient current on the current-voltage characteristics (at high voltages). The effect of transparency of the boundaries on resonance tunneling in such junctions is also investigated

NbN/AlN/NbN tunnel junctions with high current density up to 54 kA/cm2

International Nuclear Information System (INIS)

Wang, Z.; Kawakami, A.; Uzawa, Y.

1997-01-01

We report on progress in the development of high current density NbN/AlN/NbN tunnel junctions for applications as submillimeter wave superconductor-insulator-superconductor mixers. A very high current density up to 54 kA/cm 2 , roughly an order of magnitude larger than any reported results for all-NbN tunnel junctions, was achieved in the junctions with about 1 nm thick AlN barriers. The magnetic field and temperature dependence of critical supercurrents were measured to investigate the Josephson tunneling behavior of critical supercurrents in the high-J c junctions. The junctions showed high-quality junction characteristics with a large gap voltage of 5 mV and sharp quasiparticle current rise (ΔV g =0.1 mV). The R sg /R N ratio was about 5 with a V m value of 14 mV measured at 4.2 K. copyright 1997 American Institute of Physics

Effect of exciton pairing on the stationary Josephson current in superconductor-semimetal-superconductor junctions

International Nuclear Information System (INIS)

Itskovich, I.F.; Shekhter, R.I.

1983-01-01

The effect of exciton pairing of charge carriers in a semimetal on the stationary Josephson current in superconductor-semimetal-superconductor junctions is considered. It is shown that the phase transition of the semimetal interlayer into an exciton dielectric state for T/sub γ/< T/sub c/ (T/sub γ/, T/sub c/ are the superconducting and exciton transition temperatures, respectively) is accompanied by a kink on the critical current j/sub c/ versus temperature curve at the point T = T/sub γ/. A sharp nonmonotonic temperature dependence of the reduced current j/sub c//j/sub c/0 (j/sub c/0 is the critical current at T/sub γ/ = 0) is also possible in the range T< T/sub γ/. At low temperatures T<< v/sub 1,2//d<< T/sub γ/ (v/sub 1,2/ are the Fermi velocities of the carriers in the semimetal, d is the thickness of the interlayer) the critical current of the superconductor-semimetal-superconductor junction is exponentially smaller than the current in the absence of exciton pairing

Fluctuations of the peak current of tunnel diodes in multi-junction solar cells

International Nuclear Information System (INIS)

Jandieri, K; Baranovskii, S D; Stolz, W; Gebhard, F; Guter, W; Hermle, M; Bett, A W

2009-01-01

Interband tunnel diodes are widely used to electrically interconnect the individual subcells in multi-junction solar cells. Tunnel diodes have to operate at high current densities and low voltages, especially when used in concentrator solar cells. They represent one of the most critical elements of multi-junction solar cells and the fluctuations of the peak current in the diodes have an essential impact on the performance and reliability of the devices. Recently we have found that GaAs tunnel diodes exhibit extremely high peak currents that can be explained by resonant tunnelling through defects homogeneously distributed in the junction. Experiments evidence rather large fluctuations of the peak current in the diodes fabricated from the same wafer. It is a challenging task to clarify the reason for such large fluctuations in order to improve the performance of the multi-junction solar cells. In this work we show that the large fluctuations of the peak current in tunnel diodes can be caused by relatively small fluctuations of the dopant concentration. We also show that the fluctuations of the peak current become smaller for deeper energy levels of the defects responsible for the resonant tunnelling.

Edge currents in frustrated Josephson junction ladders

Science.gov (United States)

Marques, A. M.; Santos, F. D. R.; Dias, R. G.

2016-09-01

We present a numerical study of quasi-1D frustrated Josephson junction ladders with diagonal couplings and open boundary conditions, in the large capacitance limit. We derive a correspondence between the energy of this Josephson junction ladder and the expectation value of the Hamiltonian of an analogous tight-binding model, and show how the overall superconducting state of the chain is equivalent to the minimum energy state of the tight-binding model in the subspace of one-particle states with uniform density. To satisfy the constraint of uniform density, the superconducting state of the ladder is written as a linear combination of the allowed k-states of the tight-binding model with open boundaries. Above a critical value of the parameter t (ratio between the intra-rung and inter-rung Josephson couplings) the ladder spontaneously develops currents at the edges, which spread to the bulk as t is increased until complete coverage is reached. Above a certain value of t, which varies with ladder size (t = 1 for an infinite-sized ladder), the edge currents are destroyed. The value t = 1 corresponds, in the tight-binding model, to the opening of a gap between two bands. We argue that the disappearance of the edge currents with this gap opening is not coincidental, and that this points to a topological origin for these edge current states.

Ballistic Graphene Josephson Junctions from the Short to the Long Junction Regimes.

Science.gov (United States)

Borzenets, I V; Amet, F; Ke, C T; Draelos, A W; Wei, M T; Seredinski, A; Watanabe, K; Taniguchi, T; Bomze, Y; Yamamoto, M; Tarucha, S; Finkelstein, G

2016-12-02

We investigate the critical current I_{C} of ballistic Josephson junctions made of encapsulated graphene-boron-nitride heterostructures. We observe a crossover from the short to the long junction regimes as the length of the device increases. In long ballistic junctions, I_{C} is found to scale as ∝exp(-k_{B}T/δE). The extracted energies δE are independent of the carrier density and proportional to the level spacing of the ballistic cavity. As T→0 the critical current of a long (or short) junction saturates at a level determined by the product of δE (or Δ) and the number of the junction's transversal modes.

Equivalent Josephson junctions

International Nuclear Information System (INIS)

Boyadzhiev, T.L.; ); Semerdzhieva, E.G.; Shukrinov, Yu.M.; Fiziko-Tekhnicheskij Inst., Dushanbe

2008-01-01

The magnetic field dependences of critical current are numerically constructed for a long Josephson junction with a shunt- or resistor-type microscopic inhomogeneities and compared to the critical curve of a junction with exponentially varying width. The numerical results show that it is possible to replace the distributed inhomogeneity of a long Josephson junction by an inhomogeneity localized at one of its ends, which has certain technological advantages. It is also shown that the critical curves of junctions with exponentially varying width and inhomogeneities localized at the ends are unaffected by the mixed fluxon-antifluxon distributions of the magnetic flux [ru

Current amplifier and flux-buffer designs using an exponential flux shuttle with a Josephson junction synthetic inductor

International Nuclear Information System (INIS)

Gershenson, M.

1989-01-01

A current amplifier design based on the principle of fluxon propagation in a multi-junction Exponential Flux Shuttle has been investigated. In this design, the critical current of the junction is increased exponentially and the SQUID inductance is a JJ (Josephson Junction) equivalent inductance. Current gain can be achieved by generating fluxons at the low end and dissipating them at the high end where the load is located. Advantages over other types of linear devices are discussed. Two parallel Exponential Flux Shuttles can be used to duplicate flux from a high inductance input coil t a low inductance output. Device performance of the two circuits are evaluated by computer simulation, noise performance is discussed

Josephson junction analog and quasiparticle-pair current

DEFF Research Database (Denmark)

Bak, Christen Kjeldahl; Pedersen, Niels Falsig

1973-01-01

A close analogy exists between a Josephson junction and a phase-locked loop. A new type of electrical analog based on this principle is presented. It is shown that the inclusion in this analog of a low-pass filter gives rise to a current of the same form as the Josephson quasiparticle-pair current....... A simple picture of the quasiparticle-pair current, which gives the right dependences, is obtained by assuming a junction cutoff frequency to be at the energy gap. ©1973 American Institute of Physics...

Common features of a vortex structure in long exponentially shaped Josephson junctions and Josephson junctions with inhomogeneities

International Nuclear Information System (INIS)

Boyadjiev, T.L.; Semerdjieva, E.G.; Shukrinov, Yu.M.

2007-01-01

We study the vortex structure in three different models of the long Josephson junction: the exponentially shaped Josephson junction and the Josephson junctions with the resistor and the shunt inhomogeneities in the barrier layer. For these three models the critical curves 'critical current-magnetic field' are numerically constructed. We develop the idea of the equivalence of the exponentially shaped Josephson junction and the rectangular junction with the distributed inhomogeneity and demonstrate that at some parameters of the shunt and the resistor inhomogeneities in the ends of the junction the corresponding critical curves are very close to the exponentially shaped one

Oscillation of Critical Current by Gate Voltage in Cooper Pair Transistor

International Nuclear Information System (INIS)

Kim, N.; Cheong, Y.; Song, W.

2010-01-01

We measured the critical current of a Cooper pair transistor consisting of two Josephson junctions and a gate electrode. The Cooper pair transistors were fabricated by using electron-beam lithography and double-angle evaporation technique. The Gate voltage dependence of critical current was measured by observing voltage jumps at various gate voltages while sweeping bias current. The observed oscillation was 2e-periodic, which shows the Cooper pair transistor had low level of quasiparticle poisoning.

Critical current density for spin transfer torque switching with composite free layer structure

OpenAIRE

You, Chun-Yeol

2009-01-01

Critical current density of composite free layer (CFL) in magnetic tunneling junction is investigated. CFL consists of two exchange coupled ferromagnetic layers, where the coupling is parallel or anti-parallel. Instability condition of the CFL under the spin transfer torque, which is related with critical current density, is obtained by analytic spin wave excitation model and confirmed by macro-spin Landau-Lifshitz-Gilbert equation. The critical current densities for the coupled two identical...

Dynamics of the Josephson multi-junction system with junctions characterized by non-sinusoidal current - phase relationship

International Nuclear Information System (INIS)

Abal'osheva, I.; Lewandowski, S.J.

2004-01-01

It is shown that the inclusion of junctions characterized by non-sinusoidal current - phase relationship in the systems composed of multiple Josephson junctions - results in the appearance of additional system phase states. Numerical simulations and stability considerations confirm that those phase states can be realized in practice. Moreover, spontaneous formation of the grain boundary junctions in high-T c superconductors with non-trivial current-phase relations due to the d-wave symmetry of the order parameter is probable. Switching between the phase states of multiple grain boundary junction systems can lead to additional 1/f noise in high-T c superconductors. (author)

Multiscale modeling of current-induced switching in magnetic tunnel junctions using ab initio spin-transfer torques

Science.gov (United States)

Ellis, Matthew O. A.; Stamenova, Maria; Sanvito, Stefano

2017-12-01

There exists a significant challenge in developing efficient magnetic tunnel junctions with low write currents for nonvolatile memory devices. With the aim of analyzing potential materials for efficient current-operated magnetic junctions, we have developed a multi-scale methodology combining ab initio calculations of spin-transfer torque with large-scale time-dependent simulations using atomistic spin dynamics. In this work we introduce our multiscale approach, including a discussion on a number of possible schemes for mapping the ab initio spin torques into the spin dynamics. We demonstrate this methodology on a prototype Co/MgO/Co/Cu tunnel junction showing that the spin torques are primarily acting at the interface between the Co free layer and MgO. Using spin dynamics we then calculate the reversal switching times for the free layer and the critical voltages and currents required for such switching. Our work provides an efficient, accurate, and versatile framework for designing novel current-operated magnetic devices, where all the materials details are taken into account.

Fluctuation of heat current in Josephson junctions

Directory of Open Access Journals (Sweden)

P. Virtanen

2015-02-01

Full Text Available We discuss the statistics of heat current between two superconductors at different temperatures connected by a generic weak link. As the electronic heat in superconductors is carried by Bogoliubov quasiparticles, the heat transport fluctuations follow the Levitov–Lesovik relation. We identify the energy-dependent quasiparticle transmission probabilities and discuss the resulting probability density and fluctuation relations of the heat current. We consider multichannel junctions, and find that heat transport in diffusive junctions is unique in that its statistics is independent of the phase difference between the superconductors.

Planar Josephson tunnel junctions in a transverse magnetic field

DEFF Research Database (Denmark)

Monacoa, R.; Aarøe, Morten; Mygind, Jesper

2007-01-01

demagnetization effects imposed by the tunnel barrier and electrodes geometry are important. Measurements of the junction critical current versus magnetic field in planar Nb-based high-quality junctions with different geometry, size, and critical current density show that it is advantageous to use a transverse......Traditionally, since the discovery of the Josephson effect in 1962, the magnetic diffraction pattern of planar Josephson tunnel junctions has been recorded with the field applied in the plane of the junction. Here we discuss the static junction properties in a transverse magnetic field where...

Two coupled Josephson junctions: dc voltage controlled by biharmonic current

International Nuclear Information System (INIS)

Machura, L; Spiechowicz, J; Kostur, M; Łuczka, J

2012-01-01

We study transport properties of two Josephson junctions coupled by an external shunt resistance. One of the junctions (say, the first) is driven by an unbiased ac current consisting of two harmonics. The device can rectify the ac current yielding a dc voltage across the first junction. For some values of coupling strength, controlled by an external shunt resistance, a dc voltage across the second junction can be generated. By variation of system parameters such as the relative phase or frequency of two harmonics, one can conveniently manipulate both voltages with high efficiency, e.g. changing the dc voltages across the first and second junctions from positive to negative values and vice versa. (paper)

Exponential temperature dependence of the critical transport current in Y-Ba-Cu-O thin films

International Nuclear Information System (INIS)

Yom, S.S.; Hahn, T.S.; Kim, Y.H.; Chu, H.; Choi, S.S.

1989-01-01

We have measured the critical currents in rf-sputtered YBa 2 Cu 3 O/sub 7-x/ thin films deposited on polycrystalline yttria-stabilized zirconia substrates as a function of temperature down to 10 K. The dependence of the granular films at low temperature indicated exponential behavior which is similar to the superconductor-normal metal-superconductor (S-N-S) type tunneling junctions. For the films with a grain size of approximately 1 μm, we observed two exponential decay constants, which suggest that Josephson junctions limiting the transport critical current are possible both at the grain boundaries and at twin boundaries

Magnetic field behavior of current steps in long Josephson junctions

International Nuclear Information System (INIS)

Costabile, G.; Cucolo, A.M.; Pace, S.; Parmentier, R.D.; Savo, B.; Vaglio, R.

1980-01-01

The zero-field steps, or dc current singularities, in the current-voltage characteristics of long Josephson tunnel junctions, first reported by Chen et al., continue to attract research interest both because their study can provide fundamental information on the dynamics of fluxons in such junctions and because they are accompanied by the emission of microwave radiation from the junction, which may be exploitable in practical oscillator applications. The purpose of this paper is to report some experimental observations of the magnetic field behavior of the steps in junctions fabricated in our Laboratory and to offer a qualitative explanation for this behavior. Measurements have been made both for very long (L >> lambdasub(J)) and for slightly long (L approx. >= lambdasub(J)) junctions with a view toward comparing our results with those of other workers. (orig./WRI)

Influence of the 3D-2D crossover on the critical current of Nb/Cu multilayers

DEFF Research Database (Denmark)

Krasnov, V. M.; Pedersen, Niels Falsig; Oboznov, V. A.

1994-01-01

We report the experimental observation of the Josephson critical current across layers, I(c) perpendicular-to, for Nb/Cu multilayers. Unique samples with a small cross section (20 mum in diameter) consisting of ten Nb/Cu junctions were fabricated for such measurements. A strong influence of the d......We report the experimental observation of the Josephson critical current across layers, I(c) perpendicular-to, for Nb/Cu multilayers. Unique samples with a small cross section (20 mum in diameter) consisting of ten Nb/Cu junctions were fabricated for such measurements. A strong influence...... of the dimensional 3D-2D cross-over on the I(c)perpendicular-to was observed. Thus, as the temperature becomes smaller than T2D, hysteresis in the current-voltage characteristic appears and the behavior of the temperature dependence of the I(c)perpendicular-to changes. For T > T2D the diminishing of the hysteresis...... is caused by a sharp decrease of the junction capacitance in the 3D regime when the sample becomes uniform across layers. Calculation of the critical-current temperature dependence I(c)perpendicular-to (T) for our multilayers was made. An agreement between experimental and theoretical dependencies I...

Dynamics of pi-junction interferometer circuits

DEFF Research Database (Denmark)

Kornkev, V.K.; Mozhaev, P.B.; Borisenko, I.V.

2002-01-01

The pi-junction superconducting circuit dynamics was studied by means of numerical simulation technique. Parallel arrays consisting of Josephson junctions of both 0- and pi-type were studied as a model of high-T-c grain-boundary Josephson junction. The array dynamics and the critical current depe...

Visualization of the current density in Josephson junctions with 0- and π-facets

International Nuclear Information System (INIS)

Guerlich, Christian

2010-01-01

With Low-Temperature-Electron-Microscopy (LTSEM) it is possible to analyse the transport properties of solids at low temperatures. In particular it is possible to image the supercurrent density j s in Josephson junctions. This was demonstrated by comparing TTREM-images with calculated values for j s . In this thesis ramp-type Nd 2-x Ce x CuO 4-y /Nb-Josephson-junctions (NCCO/Nb) and Josephson junctions with a ferromagnetic interlayer Nb/Al-Al 2 O 3 /NiCu/Nb, so-called SIFS (superconductor-insulator-ferromagnet-superconductor) Josephson junctions were studied.It was demonstrated that LTSEM provides direct imaging of the sign change of the order parameter in superconductors with d x 2 -y 2 -symmetry. This was a controversial issue over the last decade. A step like variation in the thickness of the F-layer allows the fabrication of linear and annular Josephson junctions with different numbers of 0 and π facets. With the LTSEM 0-, π-, 0-π-, 0-π-0-, 0/2-π-0/2-, 20 x (0-π)- as well as square-shaped-, circular- and annular-Josephson-junctions were studied. It was demonstrated, that these junctions are of good quality and have critical current densities up to 42 A/cm 2 at T=4.2 K, which is a record value for SIFS junctions with a NiCu F-layer so far. By comparing the measurements with simulations a first indication of a semifluxon at the 0-π-boundary was found. (orig.)

Niobium nitride Josephson tunnel junctions with magnesium oxide barriers

International Nuclear Information System (INIS)

Shoji, A.; Aoyagi, M.; Kosaka, S.; Shinoki, F.; Hayakawa, H.

1985-01-01

Niobium nitride-niobium nitride Josephson tunnel junctions have been fabricated using amorphous magnesium oxide (a-MgO) films as barriers. These junctions have excellent tunneling characteristics. For example, a large gap voltage (V/sub g/ = 5.1 mV), a large product of the maximum critical current and the normal tunneling resistance (I/sub c/R/sub n/ = 3.25 mV), and a small subgap leakage current (V/sub m/ = 45 mV, measured at 3 mV) have been obtained for a NbN/a-MgO/NbN junction. The critical current of this junction remains finite up to 14.5 K

Electron-beam damaged high-temperature superconductor Josephson junctions

International Nuclear Information System (INIS)

Pauza, A.J.; Booij, W.E.; Herrmann, K.; Moore, D.F.; Blamire, M.G.; Rudman, D.A.; Vale, L.R.

1997-01-01

Results are presented on the fabrication and characterization of high critical temperature Josephson junctions in thin films of YBa 2 Cu 3 O 7-δ produced by the process of focused electron-beam irradiation using 350 keV electrons. The junctions so produced have uniform spatial current densities, can be described in terms of the resistive shunted junction model, and their current densities can be tailored for a given operating temperature. The physical properties of the damaged barrier can be described as a superconducting material of either reduced or zero critical temperature (T c ), which has a length of ∼15nm. The T c reduction is caused primarily by oxygen Frenkel defects in the Cu - O planes. The large beam currents used in the fabrication of the junctions mean that the extent of the barrier is limited by the incident electron-beam diameter, rather than by scattering within the film. The properties of the barrier can be calculated using a superconductor/normal/superconductor (SNS) junction model with no boundary resistance. From the SNS model, we can predict the scaling of the critical current resistance (I c R n ) product and gain insight into the factors controlling the junction properties, T c , and reproducibility. From the measured I c R n scaling data, we can predict the I c R n product of a junction at a given operating temperature with a given current density. I c R n products of ∼2mV can be achieved at 4.2 K. The reproducibility of several junctions in a number of samples can be characterized by the ratio of the maximum-to-minimum critical currents on the same substrate of less than 1.4. Stability over several months has been demonstrated at room and refrigerator temperatures (297 and 281 K) for junctions that have been initially over damaged and then annealed at temperatures ∼380K. (Abstract Truncated)

Josephson junctions with ferromagnetic interlayer

International Nuclear Information System (INIS)

Wild, Georg Hermann

2012-01-01

We report on the fabrication of superconductor/insulator/ferromagnetic metal/superconductor (Nb/AlO x /Pd 0.82 Ni 0.18 /Nb) Josephson junctions (SIFS JJs) with high critical current densities, large normal resistance times area products, and high quality factors. For these junctions, a transition from 0- to π-coupling is observed for a thickness d F =6 nm of the ferromagnetic Pd 0.82 Ni 0.18 interlayer. The magnetic field dependence of the critical current of the junctions demonstrates good spatial homogeneity of the tunneling barrier and ferromagnetic interlayer. Magnetic characterization shows that the Pd 0.82 Ni 0.18 has an out-of-plane anisotropy and large saturation magnetization indicating negligible dead layers at the interfaces. A careful analysis of Fiske modes up to about 400 GHz provides valuable information on the junction quality factor and the relevant damping mechanisms. Whereas losses due to quasiparticle tunneling dominate at low frequencies, at high frequencies the damping is explained by the finite surface resistance of the junction electrodes. High quality factors of up to 30 around 200 GHz have been achieved. They allow to study the junction dynamics, in particular the switching probability from the zero-voltage into the voltage state with and without microwave irradiation. The experiments with microwave irradiation are well explained within semi-classical models and numerical simulations. In contrast, at mK temperature the switching dynamics without applied microwaves clearly shows secondary quantum effects. Here, we could observe for the first time macroscopic quantum tunneling in Josephson junctions with a ferromagnetic interlayer. This observation excludes fluctuations of the critical current as a consequence of an unstable magnetic domain structure of the ferromagnetic interlayer and affirms the suitability of SIFS Josephson junctions for quantum information processing.

Josephson junctions with ferromagnetic interlayer

Energy Technology Data Exchange (ETDEWEB)

Wild, Georg Hermann

2012-03-04

We report on the fabrication of superconductor/insulator/ferromagnetic metal/superconductor (Nb/AlO{sub x}/Pd{sub 0.82}Ni{sub 0.18}/Nb) Josephson junctions (SIFS JJs) with high critical current densities, large normal resistance times area products, and high quality factors. For these junctions, a transition from 0- to {pi}-coupling is observed for a thickness d{sub F}=6 nm of the ferromagnetic Pd{sub 0.82}Ni{sub 0.18} interlayer. The magnetic field dependence of the critical current of the junctions demonstrates good spatial homogeneity of the tunneling barrier and ferromagnetic interlayer. Magnetic characterization shows that the Pd{sub 0.82}Ni{sub 0.18} has an out-of-plane anisotropy and large saturation magnetization indicating negligible dead layers at the interfaces. A careful analysis of Fiske modes up to about 400 GHz provides valuable information on the junction quality factor and the relevant damping mechanisms. Whereas losses due to quasiparticle tunneling dominate at low frequencies, at high frequencies the damping is explained by the finite surface resistance of the junction electrodes. High quality factors of up to 30 around 200 GHz have been achieved. They allow to study the junction dynamics, in particular the switching probability from the zero-voltage into the voltage state with and without microwave irradiation. The experiments with microwave irradiation are well explained within semi-classical models and numerical simulations. In contrast, at mK temperature the switching dynamics without applied microwaves clearly shows secondary quantum effects. Here, we could observe for the first time macroscopic quantum tunneling in Josephson junctions with a ferromagnetic interlayer. This observation excludes fluctuations of the critical current as a consequence of an unstable magnetic domain structure of the ferromagnetic interlayer and affirms the suitability of SIFS Josephson junctions for quantum information processing.

Neutron induced permanent damage in Josephson junctions

International Nuclear Information System (INIS)

Mueller, G.P.; Rosen, M.

1982-01-01

14 MeV neutron induced permanent changes in the critical current density of Josephson junctions due to displacement damage in the junction barrier are estimated using a worst case model and the binary collision simulation code MARLOWE. No likelihood of single event hard upsets is found in this model. It is estimated that a fluence of 10 18 -10 19 neutrons/cm 2 are required to change the critical current density by 5%

Influence of electron spectrum dielectrizations on critical current of the Josephson medium BaPb1-xBixO3

International Nuclear Information System (INIS)

Vojtenko, A.I.; Gabovich, A.M.; Moiseev, D.P.; Postnikov, V.M.; Shpigel', A.S.

1990-01-01

Temperature dependences of the critical current I c across the symmetrical tunnel Josephson junctions between superconductors with partially-gapped electron spectrum were calculated. Densities J c of the critical current for the bulk Josephson-type samples and current-voltage characteristics of the tunnel-type were measured

Observation of supercurrent in graphene-based Josephson junction

Energy Technology Data Exchange (ETDEWEB)

Wang, Libin; Li, Sen; Kang, Ning [Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University, Beijing 100871 (China); Xu, Chuan; Ren, Wencai [Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016 (China)

2015-07-01

Josephson junctions with a normal metal region sandwiched between two superconductors (S) are known as superconductor- normal-superconductor (SNS) structures. It has attracted significant attention especially when changing the normal metal with graphene, which allow for high tunability with the gate voltage and to study the proximity effect of the massless Dirac fermions. Here we report our work on graphene-based Josephson junction with a new two dimensional superconductor crystal, which grown directly on graphene, as superconducting electrodes. At low temperature, we observer proximity effect induced supercurrent flowing through the junction. The temperature and the magnetic field dependences of the critical current characteristics of the junction are also studied. The critical current exhibits a Fraunhofer-type diffraction pattern against magnetic field. Our experiments provided a new route of fabrication of graphene-based Josephson junction.

Branching in current-voltage characteristics of intrinsic Josephson junctions

International Nuclear Information System (INIS)

Shukrinov, Yu M; Mahfouzi, F

2007-01-01

We study branching in the current-voltage characteristics of the intrinsic Josephson junctions of high-temperature superconductors in the framework of the capacitively coupled Josephson junction model with diffusion current. A system of dynamical equations for the gauge-invariant phase differences between superconducting layers for a stack of ten intrinsic junctions has been numerically solved. We have obtained a total branch structure in the current-voltage characteristics. We demonstrate the existence of a 'breakpoint region' on the current-voltage characteristics and explain it as a result of resonance between Josephson and plasma oscillations. The effect of the boundary conditions is investigated. The existence of two outermost branches and correspondingly two breakpoint regions for the periodic boundary conditions is shown. One branch, which is observed only at periodic boundary conditions, corresponds to the propagating of the plasma mode. The second one corresponds to the situation when the charge oscillations on the superconducting layers are absent, excluding the breakpoint. A time dependence of the charge oscillations at breakpoints is presented

Flicker (1/f) noise in tunnel junction DC SQUIDS

International Nuclear Information System (INIS)

Koch, R.H.; Clarke, J.; Goubau, W.M.; Martinis, J.M.; Pegrum, C.M.; Van Harlingen, D.J.

1983-01-01

We have measured the spectral density of the 1/f voltage noise in current-biased resistively shunted Josephson tunnel junctions and dc SQUIDs. A theory in which fluctuations in the temperature give rise to fluctuations in the critical current and hence in the voltage predicts the magnitude of the noise quite accurately for junctions with areas of about 2 x 10 4 μm 2 , but significantly overestimates the noise for junctions with areas of about 6 μm 2 . DC SQUIDs fabricated from these two types of junctions exhibit substantially more 1/f voltage noise than would be predicted from a model in which the noise arises from critical current fluctuations in the junctions. This result was confirmed by an experiment involving two different bias current and flux modulation schemes, which demonstrated that the predominant 1/f voltage noise arises not from critical current fluctuations, but from some unknown source that can be regarded as an apparent 1/f flux noise. Measurements on five different configurations of dc SQUIDs fabricated with thin-film tunnel junctions and with widely varying areas, inductances, and junction capacitances show that the spectral density of the 1/f equivalent flux noise is roughtly constant, within a factor of three of (10 -10 /f)phi 2 0 Hz -1 . It is emphasized that 1/f flux noise may not be the predominant source of 1/f noise in SQUIDS fabricated with other technologies

Capacitance measurement of Josephson tunnel junctions with microwave-induced dc quasiparticle tunneling currents

International Nuclear Information System (INIS)

Hamasaki, K.; Yoshida, K.; Irie, F.; Enpuku, K.

1982-01-01

The microwave response of the dc quasiparticle tunneling current in Josephson tunnel junctions, where the Josephson current is suppressed by an external magnetic field, has been studied quantitatively in order to clarify its characteristics as a probe for the measurement of the junction capacitance. Extensive experiments for both small and long junctions are carried out for distinguishing between microwave behaviors of lumped and distributed constant junctions. It is shown that the observed voltage dependence of the dc quasiparticle tunneling current modified by an applied rf field is in good agreement with a theoretical result which takes into account the influence of the microwave circuit connected to the junction. The comparison between theory and experiment gives the magnitude of the internal rf field in the junction. Together with the applied rf field, this internal rf field leads to the junction rf impedance which is dominated by the junction capacitance in our experimental condition. In the case of lumped junctions, this experimental rf impedance is in reasonable agreement with the theoretical one with the junction capacitance estimated from the Fiske step of the distributed junction fabricated on the same substrate; the obtained ratio of the experimental impedance to the theoretical one is approximately 0.6--1.7. In the case of distributed junctions, however, experimental values of their characteristic impedances are approximately 0.2--0.3 of theoretical values calculated by assuming the one-dimensional junction model and taking account of the standing-wave effect in the junction

Magnetic field dependence of the critical superconducting current induced by the proximity effect in silicon

International Nuclear Information System (INIS)

Nishino, T.; Kawabe, U.; Yamada, E.

1986-01-01

The magnetic field dependence of the critical superconducting current induced by the proximity effect in heavily-boron-doped Si is studied experimentally. It is found that the critical current flowing through the p-type-Si-coupled junction decreases with increasing applied magnetic field. The critical current can be expressed as the product of three factors: the current induced by de Gennes's proximity effect, the exponential decrease due to pair breaking by the magnetic field, and the usual diffraction-pattern-like dependence on the magnetic field due to the Josephson effect. The second factor depends on the carrier concentration in the semiconductor. The local critical current shows a rapid decrease at the edge of the electrodes

Harmonic and reactive behavior of the quasiparticle tunnel current in SIS junctions

Energy Technology Data Exchange (ETDEWEB)

Rashid, H., E-mail: hawal@chalmers.se; Desmaris, V.; Pavolotsky, A.; Belitsky, V. [Group for Advanced Receiver Development, Earth and Space Sciences Department, Chalmers University of Technology, Gothenburg, 412 96 (Sweden)

2016-04-15

In this paper, we show theoretically and experimentally that the reactive quasiparticle tunnel current of the superconductor tunnel junction could be directly measured at specific bias voltages for the higher harmonics of the quasiparticle tunnel current. We used the theory of quasiparticle tunneling to study the higher harmonics of the quasiparticle tunnel current in superconducting tunnel junction in the presence of rf irradiation. The impact of the reactive current on the harmonic behavior of the quasiparticle tunnel current was carefully studied by implementing a practical model with four parameters to model the dc I-V characteristics of the superconducting tunnel junction. The measured reactive current at the specific bias voltage is in good agreement with our theoretically calculated reactive current through the Kramers-Kronig transform. This study also shows that there is an excellent correspondence between the behavior of the predicted higher harmonics using the previously established theory of quasiparticle tunnel current in superconducting tunnel junctions by J.R. Tucker and M.J. Feldman and the measurements presented in this paper.

Harmonic and reactive behavior of the quasiparticle tunnel current in SIS junctions

International Nuclear Information System (INIS)

Rashid, H.; Desmaris, V.; Pavolotsky, A.; Belitsky, V.

2016-01-01

In this paper, we show theoretically and experimentally that the reactive quasiparticle tunnel current of the superconductor tunnel junction could be directly measured at specific bias voltages for the higher harmonics of the quasiparticle tunnel current. We used the theory of quasiparticle tunneling to study the higher harmonics of the quasiparticle tunnel current in superconducting tunnel junction in the presence of rf irradiation. The impact of the reactive current on the harmonic behavior of the quasiparticle tunnel current was carefully studied by implementing a practical model with four parameters to model the dc I-V characteristics of the superconducting tunnel junction. The measured reactive current at the specific bias voltage is in good agreement with our theoretically calculated reactive current through the Kramers-Kronig transform. This study also shows that there is an excellent correspondence between the behavior of the predicted higher harmonics using the previously established theory of quasiparticle tunnel current in superconducting tunnel junctions by J.R. Tucker and M.J. Feldman and the measurements presented in this paper.

Asymmetric current-phase relation due to spin-orbit interaction in semiconductor nanowire Josephson junction

Energy Technology Data Exchange (ETDEWEB)

Yokoyama, Tomohiro; Eto, Mikio [Faculty of Science and Technology, Keio University, 3-14-1 Hiyoshi, Kohoku-ku, Yokohama 223-8522 (Japan); Nazarov, Yuli V. [Kavli Institute of Nanoscience, Delft University of Technology, Lorentzweg 1, 2628 CJ Delft, The Netherlands (Netherlands)

2013-12-04

We theoretically study the current-phase relation in semiconductor nanowire Josephson junction in the presence of spin-orbit interaction. In the nanowire, the impurity scattering with strong SO interaction is taken into account using the random matrix theory. In the absence of magnetic field, the Josephson current I and phase difference φ between the superconductors satisfy the relation of I(φ) = –I(–φ). In the presence of magnetic field along the nanowire, the interplay between the SO interaction and Zeeman effect breaks the current-phase relation of I(φ) = –I(–φ). In this case, we show that the critical current depends on the current direction, which qualitatively agrees with recent experimental findings.

An ion-beam-assisted process for high-Tc Josephson junctions

International Nuclear Information System (INIS)

Huang, M.Q.; Chen, L.; Zhao, Z.X.; Yang, T.; Nie, J.C.; Wu, P.J.; Xiong, X.M.

1997-01-01

We have developed a non-ion-etching ion-beam-assisted-deposition (IBAD) process for fabricating high critical-temperature (T c ) grain boundary Josephson junctions through a photoresist liftoff mask. The YBa 2 Cu 3 O 7 (YBCO) junctions fabricated through this process exhibited the resistively-shunted-junction (RSJ)-like I - V characteristics. The well-defined Shapiro steps have been seen on the I - V curves under microwave radiation. The magnetic modulation of critical current of a 4 μm width YBCO junction tallied with the prior simulated Fraunhofer diffraction pattern of a Josephson junction with a spatially homogeneous critical current density. The maximum peak-to-peak modulation voltage across the dc superconducting quantum interference device (SQUID) fabricated by using these junctions reached up to 32 μV at 77 K. The magnetic modulation of the SQUID exhibited periodic behavior with the observed modulation period of 5.0x10 -4 G. copyright 1997 American Institute of Physics

Effect of single Abrikosov vortices on the properties of Josephson tunnel junctions

International Nuclear Information System (INIS)

Golubov, A.A.; Kupriyanov, M.Yu.

1987-01-01

The effect of single Abrikosov vortices, trapped in the electrodes of a Josephson tunnel junction perpendicularly to the junction surface, on the tunnel current through the junction is studied within the framework of the microscopic theory. The current-voltage characteristic and the critical junction current I c are calculated for temperatures 0 c . It is shown that if the vortices at the junction are misaligned, singularities on the current-voltage characteristic appear at eV Δ (T), and in some cases the magnitude of suppression of I c may be of the order of magnitude of I c itself. The temperature dependence of the critical current is calculated for the case of one of the electrodes being a two-dimensional superconducting film in which the creation of opposite sign vortex pairs is significant

Pure spin polarized current through a full magnetic silicene junction

Science.gov (United States)

Lorestaniweiss, Zeinab; Rashidian, Zeinab

2018-06-01

Using the Landauer-Buttiker formula, we investigate electronic transport in silicene junction composed of ferromagnetic silicene. The direction of magnetization in the middle region may change in a plane perpendicular to the junction, whereas the magnetization direction keep fixed upward in silicene electrodes. We investigate how the various magnetization directions in the middle region affect the electronic transport. We demonstrate that conductance depends on the orientation of magnetizations in the middle region. It is found that by changing the direction of the magnetization in the middle region, a pure spin up current can be achieved. This achievement makes this full magnetic junction a good design for a full spin-up current polarizer.

Effect of quasi-particle injection on retrapping current of Josephson junction

OpenAIRE

Utsunomiya, K.; Yagi, Ryuta

2006-01-01

We report that the energy dissipation of Josephson junction can be controlled by quasi-particle injection. We fabricated two Josephson junctions on the narrow aluminum wire and controlled the energy dissipation of one junction by quasi-particle injection from the other. We observed the retrapping current increased as the quasi-particles were injected. We also studied the heating effect of our measurement.

Room-temperature current blockade in atomically defined single-cluster junctions

Science.gov (United States)

Lovat, Giacomo; Choi, Bonnie; Paley, Daniel W.; Steigerwald, Michael L.; Venkataraman, Latha; Roy, Xavier

2017-11-01

Fabricating nanoscopic devices capable of manipulating and processing single units of charge is an essential step towards creating functional devices where quantum effects dominate transport characteristics. The archetypal single-electron transistor comprises a small conducting or semiconducting island separated from two metallic reservoirs by insulating barriers. By enabling the transfer of a well-defined number of charge carriers between the island and the reservoirs, such a device may enable discrete single-electron operations. Here, we describe a single-molecule junction comprising a redox-active, atomically precise cobalt chalcogenide cluster wired between two nanoscopic electrodes. We observe current blockade at room temperature in thousands of single-cluster junctions. Below a threshold voltage, charge transfer across the junction is suppressed. The device is turned on when the temporary occupation of the core states by a transiting carrier is energetically enabled, resulting in a sequential tunnelling process and an increase in current by a factor of ∼600. We perform in situ and ex situ cyclic voltammetry as well as density functional theory calculations to unveil a two-step process mediated by an orbital localized on the core of the cluster in which charge carriers reside before tunnelling to the collector reservoir. As the bias window of the junction is opened wide enough to include one of the cluster frontier orbitals, the current blockade is lifted and charge carriers can tunnel sequentially across the junction.

Macroscopic Quantum Tunneling in Superconducting Junctions of β-Ag2Se Topological Insulator Nanowire.

Science.gov (United States)

Kim, Jihwan; Kim, Bum-Kyu; Kim, Hong-Seok; Hwang, Ahreum; Kim, Bongsoo; Doh, Yong-Joo

2017-11-08

We report on the fabrication and electrical transport properties of superconducting junctions made of β-Ag 2 Se topological insulator (TI) nanowires in contact with Al superconducting electrodes. The temperature dependence of the critical current indicates that the superconducting junction belongs to a short and diffusive junction regime. As a characteristic feature of the narrow junction, the critical current decreases monotonously with increasing magnetic field. The stochastic distribution of the switching current exhibits the macroscopic quantum tunneling behavior, which is robust up to T = 0.8 K. Our observations indicate that the TI nanowire-based Josephson junctions can be a promising building block for the development of nanohybrid superconducting quantum bits.

Current-induced magnetization switching in atom-thick tungsten engineered perpendicular magnetic tunnel junctions with large tunnel magnetoresistance.

Science.gov (United States)

Wang, Mengxing; Cai, Wenlong; Cao, Kaihua; Zhou, Jiaqi; Wrona, Jerzy; Peng, Shouzhong; Yang, Huaiwen; Wei, Jiaqi; Kang, Wang; Zhang, Youguang; Langer, Jürgen; Ocker, Berthold; Fert, Albert; Zhao, Weisheng

2018-02-14

Perpendicular magnetic tunnel junctions based on MgO/CoFeB structures are of particular interest for magnetic random-access memories because of their excellent thermal stability, scaling potential, and power dissipation. However, the major challenge of current-induced switching in the nanopillars with both a large tunnel magnetoresistance ratio and a low junction resistance is still to be met. Here, we report spin transfer torque switching in nano-scale perpendicular magnetic tunnel junctions with a magnetoresistance ratio up to 249% and a resistance area product as low as 7.0 Ω µm 2 , which consists of atom-thick W layers and double MgO/CoFeB interfaces. The efficient resonant tunnelling transmission induced by the atom-thick W layers could contribute to the larger magnetoresistance ratio than conventional structures with Ta layers, in addition to the robustness of W layers against high-temperature diffusion during annealing. The critical switching current density could be lower than 3.0 MA cm -2 for devices with a 45-nm radius.

Ferromagnetic Josephson Junctions for Cryogenic Memory

Science.gov (United States)

Niedzielski, Bethany M.; Gingrich, Eric C.; Khasawneh, Mazin A.; Loloee, Reza; Pratt, William P., Jr.; Birge, Norman O.

2015-03-01

Josephson junctions containing ferromagnetic materials are of interest for both scientific and technological purposes. In principle, either the amplitude of the critical current or superconducting phase shift across the junction can be controlled by the relative magnetization directions of the ferromagnetic layers in the junction. Our approach concentrates on phase control utilizing two junctions in a SQUID geometry. We will report on efforts to control the phase of junctions carrying either spin-singlet or spin-triplet supercurrent for cryogenic memory applications. Supported by Northorp Grumman Corporation and by IARPA under SPAWAR Contract N66001-12-C-2017.

Fabrication of TiN/AlN/TiN tunnel junctions

Energy Technology Data Exchange (ETDEWEB)

Nakayama, Takeru; Naruse, Masato; Myoren, Hiroaki; Taino, Tohru, E-mail: taino@mail.saitama-u.ac.jp

2016-11-15

Highlights: • We have fabricated TiN/AlN/TiN tunnel junctions with an epitaxial layer. • TiN and AlN films were deposited by dc and rf magnetron sputtering at ambient substrate temperatures. • The junctions have a V{sub g} = 1.1 mV, J{sub c} = 0.24 A/cm{sup 2}, R{sub sg}/R{sub n} of 7.2, and low subgap leakage current of 180 nA. - Abstract: We have fabricated TiN/AlN/TiN tunnel junctions with an epitaxial layer. The critical temperature of TiN can be changed in the range from 0.5 to 5.0 K. Therefore, it is easy to set 5.0 K as the target critical temperature. When a Superconducting Tunnel Junction (STJ) is operated as a photon detector, it is necessary to cool it to within 0.1 K of the critical temperature in consideration of the noise of the thermally stimulated currents. Because 0.3 K was desirable, as for the manufacture of general purpose photon detectors, the critical temperature 5.0 K. TiN and AlN films were deposited by dc and rf magnetron sputtering in a load-lock sputtering system at ambient substrate temperatures. The junctions have a gap voltage of V{sub g} = 1.1 mV, and critical current density of J{sub c} = 0.24 A/cm{sup 2}, and R{sub sg}/R{sub n} of 7.2, and low subgap leakage current (I{sub sub}@ 500 µV = 180 nA). We report our experiment system, the manufacture method and the junction properties in this paper.

Current-driven thermo-magnetic switching in magnetic tunnel junctions

Science.gov (United States)

Kravets, A. F.; Polishchuk, D. M.; Pashchenko, V. A.; Tovstolytkin, A. I.; Korenivski, V.

2017-12-01

We investigate switching of magnetic tunnel junctions (MTJs) driven by the thermal effect of the transport current through the junctions. The switching occurs in a specially designed composite free layer, which acts as one of the MTJ electrodes, and is due to a current-driven ferro-to-paramagnetic Curie transition with the associated exchange decoupling within the free layer leading to magnetic reversal. We simulate the current and heat propagation through the device and show how heat focusing can be used to improve the power efficiency. The Curie-switch MTJ demonstrated in this work has the advantage of being highly tunable in terms of its operating temperature range, conveniently to or just above room temperature, which can be of technological significance and competitive with the known switching methods using spin-transfer torques.

Symmetry breaking in SNS junctions: edge transport and field asymmetries

Science.gov (United States)

Suominen, Henri; Nichele, Fabrizio; Kjaergaard, Morten; Rasmussen, Asbjorn; Danon, Jeroen; Flensberg, Karsten; Levitov, Leonid; Shabani, Javad; Palmstrom, Chris; Marcus, Charles

We study magnetic diffraction patterns in a tunable superconductor-semiconductor-superconductor junction. By utilizing epitaxial growth of aluminum on InAs/InGaAs we obtain transparent junctions which display a conventional Fraunhofer pattern of the critical current as a function of applied perpendicular magnetic field, B⊥. By studying the angular dependence of the critical current with applied magnetic fields in the plane of the junction we find a striking anisotropy. We attribute this effect to dephasing of Andreev states in the bulk of the junction, leading to SQUID like behavior when the magnetic field is applied parallel to current flow. Furthermore, in the presence of both in-plane and perpendicular fields, asymmetries in +/-B⊥ are observed. We suggest possible origins and discuss the role of spin-orbit and Zeeman physics together with a background disorder potential breaking spatial symmetries of the junction. Research supported by Microsoft Project Q, the Danish National Research Foundation and the NSF through the National Nanotechnology Infrastructure Network.

Field emission current from a junction field-effect transistor

International Nuclear Information System (INIS)

Monshipouri, Mahta; Abdi, Yaser

2015-01-01

Fabrication of a titanium dioxide/carbon nanotube (TiO 2 /CNT)-based transistor is reported. The transistor can be considered as a combination of a field emission transistor and a junction field-effect transistor. Using direct current plasma-enhanced chemical vapor deposition (DC-PECVD) technique, CNTs were grown on a p-typed (100)-oriented silicon substrate. The CNTs were then covered by TiO 2 nanoparticles 2–5 nm in size, using an atmospheric pressure CVD technique. In this device, TiO 2 /CNT junction is responsible for controlling the emission current. High on/off-current ratio and proper gate control are the most important advantages of device. A model based on Fowler–Nordheim equation is utilized for calculation of the emission current and the results are compared with experimental data. The effect of TiO 2 /CNT hetero-structure is also investigated, and well modeled

Macroscopic quantum effects in the zero voltage state of the current biased Josephson junction

International Nuclear Information System (INIS)

Clarke, J.; Devoret, M.H.; Martinis, J.; Esteve, D.

1985-05-01

When a weak microwave current is applied to a current-biased Josephson tunnel junction in the thermal limit the escape rate from the zero voltage state is enhanced when the microwave frequency is near the plasma frequency of the junction. The resonance curve is markedly asymmetric because of the anharmonic properties of the potential well: this behavior is well explained by a computer simulation using a resistively shunted junction model. This phenomenon of resonant activation enables one to make in situ measurements of the capacitance and resistance shunting the junction, including contributions from the complex impedance presented by the current leads. For the relatively large area junctions studied in these experiments, the external capacitive loading was relatively unimportant, but the damping was entirely dominated by the external resistance

Coincidence of features of emitted THz electromagnetic wave power form a single Josephson junction and different current components

Science.gov (United States)

Hamdipour, Mohammad

2017-12-01

By applying a voltage to a Josephson junction, the charge in superconducting layers (S-layers) will oscillate. Wavelength of the charge oscillations in S-layers is related to external current in junction, by increasing the external current, the wavelength will decrease which cause in some currents the wavelength be incommensurate with width of junction, so the CVC shows Fiske like steps. External current throwing along junction has some components, resistive, capacitive and superconducting current, beside these currents there is a current in lateral direction of junction, (x direction). On the other hand, the emitted electromagnetic wave power in THz region is related to AC component of electric field in junction, which itself is related to charge density in S-layers, which is related to currents in the system. So we expect that features of variation of current components reflect the features of emitted THz power form junction. Here we study in detail the superconductive current in a long Josephson junction (JJ), the current voltage characteristics (CVC) of junction and emitted THz power from the system. Then we compare the results. Comparing the results we see that there is a good qualitative coincidence in features of emitted THz power and supercurrent in junction.

Rectified tunneling current response of bio-functionalized metal-bridge-metal junctions.

Science.gov (United States)

Liu, Yaqing; Offenhäusser, Andreas; Mayer, Dirk

2010-01-15

Biomolecular bridged nanostructures allow direct electrical addressing of electroactive biomolecules, which is of interest for the development of bioelectronic and biosensing hybrid junctions. In the present paper, the electroactive biomolecule microperoxidase-11 (MP-11) was integrated into metal-bridge-metal (MBM) junctions assembled from a scanning tunneling microscope (STM) setup. Before immobilization of MP-11, the Au working electrode was first modified by a self-assembled monolayer of 1-undecanethiol (UDT). A symmetric and potential independent response of current-bias voltage (I(t)/V(b)) was observed for the Au (substrate)/UDT/Au (tip) junction. However, the I(t)/V(b) characteristics became potential dependent and asymmetrical after binding of MP-11 between the electrodes of the junction. The rectification ratio of the asymmetric current response varies with gate electrode modulation. A resonant tunneling process between metal electrode and MP-11 enhances the tunneling current and is responsible for the observed rectification. Our investigations demonstrated that functional building blocks of proteins can be reassembled into new conceptual devices with operation modes deviating from their native function, which could prove highly useful in the design of future biosensors and bioelectronic devices. Copyright 2009 Elsevier B.V. All rights reserved.

Experimental evaluation of IGBT junction temperature measurement via peak gate current

DEFF Research Database (Denmark)

Baker, Nick; Munk-Nielsen, Stig; Iannuzzo, Francesco

2015-01-01

Temperature sensitive electrical parameters allow junction temperature measurements on power semiconductors without modification to module packaging. The peak gate current has recently been proposed for IGBT junction temperature measurement and relies on the temperature dependent resistance...... of the gate pad. Consequently, a consideration of chip geometry and location of the gate pad is required before interpreting temperature data from this method. Results are also compared with a traditional electrical temperature measurement method: the voltage drop under low current....

Effect of quantum noise and tunneling on the fluctuational voltage-current characteristics and the lifetime of the zero-voltage state in Josephson junctions

International Nuclear Information System (INIS)

Mel'nikov, V.I.; Suetoe, A.

1986-01-01

The minima of the potential energy for the dynamical variable phi of a Josephson junction are separated by barriers of height hI/sub c//e, where I/sub c/ is the critical current. At low temperatures, T hΩ/2π (Ω is the Josephson plasma frequency). We consider this problem for high-quality junctions (RCΩ>>1, R and C are the resistance and the capacitance of the junction), accounting for the effect of a Johnson-Nyquist noise and quantum tunneling at the barrier top. With a simplifying assumption, we derive a pair of integral equations containing an energy variable for the steady-state distribution of phi and phi-dot, and solve it by a modification of the Wiener-Hopf method. The result is a formula for the current dependence of the fluctuational voltage, valid for currents I 2 <<1

Field emission current from a junction field-effect transistor

Energy Technology Data Exchange (ETDEWEB)

Monshipouri, Mahta; Abdi, Yaser, E-mail: y.abdi@ut.ac.ir [University of Tehran, Nano-Physics Research Laboratory, Department of Physics (Iran, Islamic Republic of)

2015-04-15

Fabrication of a titanium dioxide/carbon nanotube (TiO{sub 2}/CNT)-based transistor is reported. The transistor can be considered as a combination of a field emission transistor and a junction field-effect transistor. Using direct current plasma-enhanced chemical vapor deposition (DC-PECVD) technique, CNTs were grown on a p-typed (100)-oriented silicon substrate. The CNTs were then covered by TiO{sub 2} nanoparticles 2–5 nm in size, using an atmospheric pressure CVD technique. In this device, TiO{sub 2}/CNT junction is responsible for controlling the emission current. High on/off-current ratio and proper gate control are the most important advantages of device. A model based on Fowler–Nordheim equation is utilized for calculation of the emission current and the results are compared with experimental data. The effect of TiO{sub 2}/CNT hetero-structure is also investigated, and well modeled.

Evaluation of the Kinetic Property of Single-Molecule Junctions by Tunneling Current Measurements.

Science.gov (United States)

Harashima, Takanori; Hasegawa, Yusuke; Kiguchi, Manabu; Nishino, Tomoaki

2018-01-01

We investigated the formation and breaking of single-molecule junctions of two kinds of dithiol molecules by time-resolved tunneling current measurements in a metal nanogap. The resulting current trajectory was statistically analyzed to determine the single-molecule conductance and, more importantly, to reveal the kinetic property of the single-molecular junction. These results suggested that combining a measurement of the single-molecule conductance and statistical analysis is a promising method to uncover the kinetic properties of the single-molecule junction.

Holographic s-wave and p-wave Josephson junction with backreaction

Energy Technology Data Exchange (ETDEWEB)

Wang, Yong-Qiang; Liu, Shuai [Institute of Theoretical Physics, Lanzhou University,Lanzhou 730000, People’s Republic of (China)

2016-11-22

In this paper, we study the holographic models of s-wave and p-wave Josephoson junction away from probe limit in (3+1)-dimensional spacetime, respectively. With the backreaction of the matter, we obtained the anisotropic black hole solution with the condensation of matter fields. We observe that the critical temperature of Josephoson junction decreases with increasing backreaction. In addition to this, the tunneling current and condenstion of Josephoson junction become smaller as backreaction grows larger, but the relationship between current and phase difference still holds for sine function. Moreover, condenstion of Josephoson junction deceases with increasing width of junction exponentially.

Online junction temperature measurement using peak gate current

DEFF Research Database (Denmark)

Baker, Nick; Munk-Nielsen, Stig; Iannuzzo, Francesco

2015-01-01

A new method for junction temperature measurement of MOS-gated power semiconductor switches is presented. The measurement method involves detecting the peak voltage over the external gate resistor of an IGBT or MOSFET during turn-on. This voltage is directly proportional to the peak gate current...

Transport critical current density in flux creep model

International Nuclear Information System (INIS)

Wang, J.; Taylor, K.N.R.; Russell, G.J.; Yue, Y.

1992-01-01

The magnetic flux creep model has been used to derive the temperature dependence of the critical current density in high temperature superconductors. The generally positive curvature of the J c -T diagram is predicted in terms of two interdependent dimensionless fitting parameters. In this paper, the results are compared with both SIS and SNS junction models of these granular materials, neither of which provides a satisfactory prediction of the experimental data. A hybrid model combining the flux creep and SNS mechanisms is shown to be able to account for the linear regions of the J c -T behavior which are observed in some materials

Strain-assisted current-induced magnetization reversal in magnetic tunnel junctions: A micromagnetic study with phase-field microelasticity

International Nuclear Information System (INIS)

Huang, H. B.; Hu, J. M.; Yang, T. N.; Chen, L. Q.; Ma, X. Q.

2014-01-01

Effect of substrate misfit strain on current-induced in-plane magnetization reversal in CoFeB-MgO based magnetic tunnel junctions is investigated by combining micromagnetic simulations with phase-field microelasticity theory. It is found that the critical current density for in-plane magnetization reversal decreases dramatically with an increasing substrate strain, since the effective elastic field can drag the magnetization to one of the four in-plane diagonal directions. A potential strain-assisted multilevel bit spin transfer magnetization switching device using substrate misfit strain is also proposed.

The persistent current and energy spectrum on a driven mesoscopic LC-circuit with Josephson junction

Science.gov (United States)

Pahlavanias, Hassan

2018-03-01

The quantum theory for a mesoscopic electric circuit including a Josephson junction with charge discreteness is studied. By considering coupling energy of the mesoscopic capacitor in Josephson junction device, a Hamiltonian describing the dynamics of a quantum mesoscopic electric LC-circuit with charge discreteness is introduced. We first calculate the persistent current on a quantum driven ring including Josephson junction. Then we obtain the persistent current and energy spectrum of a quantum mesoscopic electrical circuit which includes capacitor, inductor, time-dependent external source and Josephson junction.

Effect of parallel transport currents on the d-wave Josephson junction

International Nuclear Information System (INIS)

Rashedi, Gholamreza

2009-01-01

In this paper, the non-local mixing of coherent current states in d-wave superconducting banks is investigated. The superconducting banks are connected via a ballistic point contact. The banks have mis-orientation and phase difference. Furthermore, they are subjected to a tangential transport current along the ab plane of d-wave crystals and parallel to the interface between the superconductors. The effects of mis-orientation and external transport current on the current-phase relations and current distributions are the subjects of this paper. It is observed that, at values of phase difference close to 0, π and 2π, the current distribution may have a vortex-like form in the vicinity of the point contact. The current distribution of the above-mentioned junction between d-wave superconductors is totally different from the junction between s-wave superconductors. The interesting result which this study shows is that spontaneous and Josephson currents are observed for the case of φ = 0.

Critical current simulation in granular superconductors above the percolation threshold

Science.gov (United States)

Riedinger, Roland

1992-02-01

In the phase-coherent regime without applied external magnetic field, the critical superconducting current is limited by intragranular junctions which behave like Josephson junctions. We study the percolation aspects specific to lattices of such junctions and/or the mixing of superconductor with normal grains by averaging over configurations. We illustrate on 2 and 3 dimensional examples. The power laws valid near the percolation threshold are valid well above it, in two and three dimensions. We discuss the other models limiting the superconducting current, the vortex creep and superconducting order parameter fluctuations. Dans la limite de champ magnétique nul et de cohérence de phase du paramètre d'ordre supraconducteur, le courant supraconducteur maximal dans un réseau est limité par les jonctions intergranulaires qui se comportent comme des jonctions Josephson. Nous analysons les problèmes de percolation spécifiques aux réseaux de jonctions et du mélange de grains normaux et supraconducteurs. Nous donnons des exemples bidimensionnels et tridimensionnels ; après moyenne sur les configurations et analyse en taille finie, nous montrons que les lois de puissance valables au voisinage du seuil de percolation s'étendent sur un grand domaine au-delà du seuil de percolation, à deux et trois dimensions. Nous discutons les autres modèles limitant le courant supraconducteur, ancrage de vortex et fluctuations du paramètre d'ordre.

Scaling for quantum tunneling current in nano- and subnano-scale plasmonic junctions.

Science.gov (United States)

Zhang, Peng

2015-05-19

When two conductors are separated by a sufficiently thin insulator, electrical current can flow between them by quantum tunneling. This paper presents a self-consistent model of tunneling current in a nano- and subnano-meter metal-insulator-metal plasmonic junction, by including the effects of space charge and exchange correlation potential. It is found that the J-V curve of the junction may be divided into three regimes: direct tunneling, field emission, and space-charge-limited regime. In general, the space charge inside the insulator reduces current transfer across the junction, whereas the exchange-correlation potential promotes current transfer. It is shown that these effects may modify the current density by orders of magnitude from the widely used Simmons' formula, which is only accurate for a limited parameter space (insulator thickness > 1 nm and barrier height > 3 eV) in the direct tunneling regime. The proposed self-consistent model may provide a more accurate evaluation of the tunneling current in the other regimes. The effects of anode emission and material properties (i.e. work function of the electrodes, electron affinity and permittivity of the insulator) are examined in detail in various regimes. Our simple model and the general scaling for tunneling current may provide insights to new regimes of quantum plasmonics.

Supercurrent and multiple Andreev reflections in micrometer-long ballistic graphene Josephson junctions.

Science.gov (United States)

Zhu, Mengjian; Ben Shalom, Moshe; Mishchsenko, Artem; Fal'ko, Vladimir; Novoselov, Kostya; Geim, Andre

2018-02-08

Ballistic Josephson junctions are predicted to support a number of exotic physics processess, providing an ideal system to inject the supercurrent in the quantum Hall regime. Herein, we demonstrate electrical transport measurements on ballistic superconductor-graphene-superconductor junctions by contacting graphene to niobium with a junction length up to 1.5 μm. Hexagonal boron nitride encapsulation and one-dimensional edge contacts guarantee high-quality graphene Josephson junctions with a mean free path of several micrometers and record-low contact resistance. Transports in normal states including the observation of Fabry-Pérot oscillations and Sharvin resistance conclusively witness the ballistic propagation in the junctions. The critical current density J C is over one order of magnitude larger than that of the previously reported junctions. Away from the charge neutrality point, the I C R N product (I C is the critical current and R N the normal state resistance of junction) is nearly a constant, independent of carrier density n, which agrees well with the theory for ballistic Josephson junctions. Multiple Andreev reflections up to the third order are observed for the first time by measuring the differential resistance in the micrometer-long ballistic graphene Josephson junctions.

Coherent current states in mesoscopic four-terminal Josephson junction

International Nuclear Information System (INIS)

Zareyan, M.; Omelyanchouk, A.N.

1999-01-01

A theory is offered for the ballistic 4-terminal Josephson junction. The studied system consist of a mesoscopic two-dimensional normal rectangular layer which is attached on each side to the bulk superconducting banks (terminals). A relation is obtained between the currents through the different terminals, that is valid for arbitrary temperatures and junction sizes. The nonlocal coupling of the supercurrent leads to a new effect, specific for the mesoscopic weak link between two superconducting rings; an applied magnetic flux through one of the rings produces a magnetic flux in the other ring even in the absence of an external flux through the other one. The phase dependent distributions of the local density of Andreev states, of the supercurrents and of the induced order parameter are obtained. The 'interference pattern' for the anomalous average inside the two-dimensional region cam be regulated by the applied magnetic fluxes or the transport currents. For some values of the phase differences between the terminals, the current vortex state and two-dimensional phase slip center appear

Phonon-induced enhancements of the energy gap and critical current in superconducting aluminum

International Nuclear Information System (INIS)

Seligson, D.

1983-01-01

The enhancement of the energy gap, Δ, and critical current, i/sub c/, in superconducting aluminum thin films were under the influence of 8 to 10 GHz phonons. The phonons were generated by piezoelectric transduction of a 1 kW microwave pulse of about 1 μsec duration. By means of a quartz delay line, the phonons were allowed to enter the aluminum only after the microwaves had long since disappeared. The critical current was measured in long narrow Al strips, in which the current flow is 1-dimensional and well described by Ginsburg-Landau theory. To measure Δ the Al film was used as one electrode in a superconductor-insulator-superconductor tunnel junction whose current-voltage characteristic gave Δ directly. For the measurements of i/sub c/, the total critical current was measured in the presence of the phonon perturbation. For the measurements of Δ the change of Δ away from its equilibrium value was measured. In both cases the first measurements of enhancement of these macroscopic variables under phonon irradiation is reported. The gap-enhancement was found to be in good agreement with theory, but only for relatively and surprisingly low input power. The critical current measurements are predicted to be in rough agreement with the Δ measurements but this was not observed

All high T sub c edge junctions and SQUIDs

Energy Technology Data Exchange (ETDEWEB)

Laibowitz, R.B.; Koch, R.H.; Gupta, A.; Koren, G.; Gallagher, W.J.; Foglietti, V.; Oh, B.; Viggiano, J.M. (IBM Research Division, P.O. Box 218, Yorktown Heights, New York 10598 (US))

1990-02-12

We present the first observations of superconducting quantum interference in multilevel, all high {ital T}{sub {ital c}}, lithographically patterned edge junction structures. The current-voltage characteristics are nonhysteretic and have well-defined critical currents. The dynamic resistance is independent of current above the critical current. These devices show periodic sensitivity to magnetic fields and low levels of magnetic hysteresis up to temperatures around 60 K.

Manipulating Josephson junctions in thin-films by nearby vortices

International Nuclear Information System (INIS)

Kogan, V.G.; Mints, R.G.

2014-01-01

Highlights: • Vortex located in a bank of a planar Josephson junction changes its character. • Vortex located at some discreet positions in thin strip bank suppresses to zero the zero-field current. • The number of these positions is equal to the number of vortices trapped. • Critical current-field patterns are strongly affected by the vortex position. - Abstract: It is shown that a vortex trapped in one of the banks of a planar edge-type Josephson junction in a narrow thin-film superconducting strip can change drastically the dependence of the junction critical current on the applied field, I c (H). When the vortex is placed at certain discrete positions in the strip middle, the pattern I c (H) has zero at H=0 instead of the traditional maximum of ‘0-type’ junctions. The number of these positions is equal to the number of vortices trapped at the same location. When the junction–vortex separation exceeds ∼W, the strip width, I c (H) is no longer sensitive to the vortex presence. The same is true for any separation if the vortex approaches the strip edges

Temperature behavior of SNS-like Nb/Al-AlO x/Nb Josephson junctions

International Nuclear Information System (INIS)

Lacquaniti, V.; Andreone, D.; Maggi, S.; Rocci, R.; Sosso, A.; Steni, R.

2006-01-01

Overdamped Nb/Al-AlO x /Nb Josephson junctions are an intermediate state between the SIS and SNS Josephson junctions. Stable and reproducible non-hysteretic current-voltage characteristics have been obtained with a proper choice of the fabrication parameters, featuring critical current densities J c up to 25 kA/cm 2 and characteristic voltages up to 450 μV. While these values make the junctions interesting for RSFQ electronic circuits, their response to an RF signal at 70 GHz has demonstrated their suitability for both programmable and ac voltage standard. In these work we analyse the temperature behavior of these junctions up to T/T c = 1, T c being the niobium critical temperature, which gives relevant information on the junction structure and, especially, on the oxide insulator/metallic film barrier, which is the key for the reproducible transition from an hysteretic to a non-hysteretic behavior. The results are also compared with other data of hysteretic and overdamped junctions

Variability study of Si nanowire FETs with different junction gradients

Directory of Open Access Journals (Sweden)

Jun-Sik Yoon

2016-01-01

Full Text Available Random dopant fluctuation effects of gate-all-around Si nanowire field-effect transistors (FETs are investigated in terms of different diameters and junction gradients. The nanowire FETs with smaller diameters or shorter junction gradients increase relative variations of the drain currents and the mismatch of the drain currents between source-drain and drain-source bias change in the saturation regime. Smaller diameters decreased current drivability critically compared to standard deviations of the drain currents, thus inducing greater relative variations of the drain currents. Shorter junction gradients form high potential barriers in the source-side lightly-doped extension regions at on-state, which determines the magnitude of the drain currents and fluctuates the drain currents greatly under thermionic-emission mechanism. On the other hand, longer junction gradients affect lateral field to fluctuate the drain currents greatly. These physical phenomena coincide with correlations of the variations between drain currents and electrical parameters such as threshold voltages and parasitic resistances. The nanowire FETs with relatively-larger diameters and longer junction gradients without degrading short channel characteristics are suggested to minimize the relative variations and the mismatch of the drain currents.

Charge and spin current oscillations in a tunnel junction induced by magnetic field pulses

Energy Technology Data Exchange (ETDEWEB)

Dartora, C.A., E-mail: cadartora@eletrica.ufpr.br [Electrical Engineering Department, Federal University of Parana (UFPR), C.P. 19011 Curitiba, 81.531-970 PR (Brazil); Nobrega, K.Z., E-mail: bzuza1@yahoo.com.br [Federal Institute of Education, Science and Technolgy of Maranhão (IFMA), Av. Marechal Castelo Branco, 789, São Luís, 65.076-091 MA (Brazil); Cabrera, G.G., E-mail: cabrera@ifi.unicamp.br [Instituto de Física ‘Gleb Wataghin’, Universidade Estadual de Campinas (UNICAMP), C.P. 6165, Campinas 13.083-970 SP (Brazil)

2016-08-15

Usually, charge and spin transport properties in tunnel junctions are studied in the DC bias regime and/or in the adiabatic regime of time-varying magnetic fields. In this letter, the temporal dynamics of charge and spin currents in a tunnel junction induced by pulsed magnetic fields is considered. At low bias voltages, energy and momentum of the conduction electrons are nearly conserved in the tunneling process, leading to the description of the junction as a spin-1/2 fermionic system coupled to time-varying magnetic fields. Under the influence of pulsed magnetic fields, charge and spin current can flow across the tunnel junction, displaying oscillatory behavior, even in the absence of DC bias voltage. A type of spin capacitance function, in close analogy to electric capacitance, is predicted.

Experiments on the interaction between long Josephson junctions and a coplanar strip resonator

DEFF Research Database (Denmark)

Davidson, A.; Pedersen, Niels Falsig

1992-01-01

Experiments are reported on a new geometry designed to couple long Josephson junction fluxon oscillators to a resonant cavity. The junctions were made with a niobium-aluminum oxide-niobium trilayer process with a critical-current density of around 1000 A/cm2. Various numbers of such junctions wer...

Geometric dependence of Nb-Bi2Te3-Nb topological Josephson junction transport parameters

International Nuclear Information System (INIS)

Molenaar, C G; Leusink, D P; Brinkman, A; Wang, X L

2014-01-01

Superconductor-topological insulator–superconductor Josephson junctions have been fabricated in order to study the width dependence of the critical current, normal state resistance and flux periodicity of the critical current modulation in an external field. Previous literature reports suggest anomalous scaling in topological junctions due to the presence of Majorana bound states. However, for most realized devices, one would expect that trivial 2π-periodic Andreev levels dominate transport. We also observe anomalous scaling behaviour of junction parameters, but the scaling can be well explained by mere geometric effects, such as the parallel bulk conductivity shunt and flux focusing. (paper)

Direct fabrication of a W-C SNS Josephson junction using focused-ion-beam chemical vapour deposition

International Nuclear Information System (INIS)

Dai, Jun; Kometani, Reo; Ishihara, Sunao; Warisawa, Shin’ichi; Onomitsu, Koji; Krockenberger, Yoshiharu; Yamaguchi, Hiroshi

2014-01-01

A tungsten-carbide (W-C) superconductor/normal metal/superconductor (SNS) Josephson junction has been fabricated using focused-ion-beam chemical vapour deposition (FIB-CVD). Under certain process conditions, the component ratio has been tuned from W: C: Ga = 26%: 66%: 8% in the superconducting wires to W: C: Ga = 14%: 79%: 7% in the metallic junction. The critical current density at 2.5 K in the SNS Josephson junction is 1/3 of that in W-C superconducting nanowire. Also, a Fraunhofer-like oscillation of critical current in the junction with four periods is observed. FIB-CVD opens avenues for novel functional superconducting nanodevices. (paper)

Maximizing ion current rectification in a bipolar conical nanopore fluidic diode using optimum junction location.

Science.gov (United States)

Singh, Kunwar Pal

2016-10-12

The ion current rectification has been obtained as a function of the location of a heterojunction in a bipolar conical nanopore fluidic diode for different parameters to determine the junction location for maximum ion current rectification using numerical simulations. Forward current peaks for a specific location of the junction and reverse current decreases with the junction location due to a change in ion enrichment/depletion in the pore. The optimum location of the heterojunction shifts towards the tip with base/tip diameter and surface charge density, and towards the base with the electrolyte concentration. The optimum location of the heterojunction has been approximated by an equation as a function of pore length, base/tip diameter, surface charge density and electrolyte concentration. The study is useful to design a rectifier with maximum ion current rectification for practical purposes.

Current-induced forces: a new mechanism to induce negative differential resistance and current-switching effect in molecular junctions

Science.gov (United States)

Gu, Lei; Fu, Hua-Hua

2015-12-01

Current-induced forces can excite molecules, polymers and other low-dimensional materials, which in turn leads to an effective gate voltage through Holstein interaction. Here, by taking a short asymmetric DNA junction as an example, and using the Langevin approach, we find that when suppression of charge transport by the effective gate voltage surpasses the current increase from an elevated voltage bias, the current-voltage (I-V) curves display strong negative differential resistance (NDR) and perfect current-switching characteristics. The asymmetric DNA chain differs in mechanical stability under inverse voltages and the I-V curve is asymmetric about inverse biases, which can be used to understand recent transport experiments on DNA chains, and meanwhile provides a new strategy to realize NDR in molecular junctions and other low-dimensional quantum systems.

Current-induced forces: a new mechanism to induce negative differential resistance and current-switching effect in molecular junctions

International Nuclear Information System (INIS)

Gu, Lei; Fu, Hua-Hua

2015-01-01

Current-induced forces can excite molecules, polymers and other low-dimensional materials, which in turn leads to an effective gate voltage through Holstein interaction. Here, by taking a short asymmetric DNA junction as an example, and using the Langevin approach, we find that when suppression of charge transport by the effective gate voltage surpasses the current increase from an elevated voltage bias, the current-voltage (I–V) curves display strong negative differential resistance (NDR) and perfect current-switching characteristics. The asymmetric DNA chain differs in mechanical stability under inverse voltages and the I–V curve is asymmetric about inverse biases, which can be used to understand recent transport experiments on DNA chains, and meanwhile provides a new strategy to realize NDR in molecular junctions and other low-dimensional quantum systems. (paper)

Effects of oxygen content on the pinning energy and critical current in the granular (Hg, Re)-1223 superconductors

International Nuclear Information System (INIS)

Passos, C.A.C.; Orlando, M.T.D.; Fernandes, A.A.R.; Oliveira, F.D.C.; Simonetti, D.S.L.; Fardin, J.F.; Belich, H.; Ferreira, M.M.

2005-01-01

Hg 0.82 Re 0.18 Ba 2 Ca 2 Cu 3 O 8+d polycrystalline samples, with different oxygen content, were investigated by ac resistance measurements under different applied magnetic field (up to 3 A/m) and critical current measurements. The intergrain and intragrain regions have shown an improvement in the pinning energy and critical current density, as considering the precursor preparation with 10% of O 2 and 90% of Ar (optimal doped). In addition, the samples presented S-I-S junctions type as considering Ambegaokar-Baratoff theory

Towards quantum signatures in a swept-bias Josephson junction

Energy Technology Data Exchange (ETDEWEB)

Losert, Harald; Vogel, Karl; Schleich, Wolfgang P. [Institut fuer Quantenphysik and Center for Integrated Quantum Science and Technology (IQST), Universitaet Ulm, D-89069 Ulm (Germany)

2016-07-01

Josephson junctions are one of the best examples for the observation of macroscopic quantum tunneling. The phase difference in a current-biased Josephson junction behaves like the position of a particle in a tilted washboard potential. The escape of this phase-particle corresponds to the voltage switching of the associated junction. Quantum mechanically, the escape from the washboard potential can be explained as tunneling from the ground state, or an excited state. However, it has been shown, that in the case of periodic driving the experimental data for quantum mechanical key features, e.g. Rabi oscillations or energy level quantization, can be reproduced by a completely classical description. Motivated by this discussion, we investigate a swept-bias Josephson junction in the case of a large critical current. In particular, we contrast the switching current distributions resulting from a quantum mechanical and classical description of the time evolution.

Inhibition of Rho and Rac geranylgeranylation by atorvastatin is critical for preservation of endothelial junction integrity.

Directory of Open Access Journals (Sweden)

Hongbing Xiao

Full Text Available BACKGROUND: Small GTPases (guanosine triphosphate, GTP are involved in many critical cellular processes, including inflammation, proliferation, and migration. GTP loading and isoprenylation are two important post-translational modifications of small GTPases, and are critical for their normal function. In this study, we investigated the role of post-translational modifications of small GTPases in regulating endothelial cell inflammatory responses and junctional integrity. METHODS AND RESULTS: Confluent human umbilical vein endothelial cell (HUVECs treated with atorvastatin demonstrated significantly decreased lipopolysaccharide (LPS-mediated IL-6 and IL-8 generation. The inhibitory effect of atorvastatin (Atorva was attenuated by co-treatment with 100 µM mevalonate (MVA or 10 µM geranylgeranyl pyrophosphate (GGPP, but not by 10 µM farnesyl pyrophosphate (FPP. Atorvastatin treatment of HUVECs produced a time-dependent increase in GTP loading of all Rho GTPases, and induced the translocation of small Rho GTPases from the cellular membrane to the cytosol, which was reversed by 100 µM MVA and 10 µM GGPP, but not by 10 µM FPP. Atorvastatin significantly attenuated thrombin-induced HUVECs permeability, increased VE-cadherin targeting to cell junctions, and preserved junction integrity. These effects were partially reversed by GGPP but not by FPP, indicating that geranylgeranylation of small GTPases plays a major role in regulating endothelial junction integrity. Silencing of small GTPases showed that Rho and Rac, but not Cdc42, play central role in HUVECs junction integrity. CONCLUSIONS: In conclusion, our studies show that post-translational modification of small GTPases plays a vital role in regulating endothelial inflammatory response and endothelial junction integrity. Atorvastatin increased GTP loading and inhibited isoprenylation of small GTPases, accompanied by reduced inflammatory response and preserved cellular junction integrity.

Fabrication-process-induced variations of Nb/Al/AlOx/Nb Josephson junctions in superconductor integrated circuits

International Nuclear Information System (INIS)

Tolpygo, Sergey K; Amparo, Denis

2010-01-01

Currently, superconductor digital integrated circuits fabricated at HYPRES, Inc. can operate at clock frequencies approaching 40 GHz. The circuits present multilayered structures containing tens of thousands of Nb/Al/AlO x /Nb Josephson junctions (JJs) of various sizes interconnected by four Nb wiring layers, resistors, and other circuit elements. In order to be fully operational, the integrated circuits should be fabricated such that the critical currents of the JJs are within the tight design margins and the proper relationships between the critical currents of JJs of different sizes are preserved. We present experimental data and discuss mechanisms of process-induced variations of the critical current and energy gap of Nb/Al/AlO x /Nb JJs in integrated circuits. We demonstrate that the Josephson critical current may depend on the type and area of circuit elements connected to the junction, on the circuit pattern, and on the step in the fabrication process at which the connection is made. In particular, we discuss the influence of (a) the junction base electrode connection to the ground plane, (b) the junction counter electrode connection to the ground plane, and (c) the counter electrode connection to the Ti/Au or Ti/Pd/Au contact pads by Nb wiring. We show that the process-induced changes of the properties of Nb/Al/AlO x /Nb junctions are caused by migration of impurity atoms (hydrogen) between the different layers comprising the integrated circuits.

Thermoelectric-induced spin currents in single-molecule magnet tunnel junctions

Science.gov (United States)

Zhang, Zhengzhong; Jiang, Liang; Wang, Ruiqiang; Wang, Baigeng; Xing, D. Y.

2010-12-01

A molecular spin-current generator is proposed, which consists of a single-molecule magnet (SMM) coupled to two normal metal electrodes with temperature gradient. It is shown that this tunneling junction can generate a highly spin-polarized current by thermoelectric effects, whose flowing direction and spin polarization can be changed by adjusting the gate voltage applied to the SMM. This device can be realized with current technologies and may have practical use in spintronics and quantum information.

Niobium tunnel junction fabrication using e-gun evaporation and SNAP

Science.gov (United States)

Kortlandt, J.; van der Zant, H. S. J.; Schellingerhout, A. J. G.; Mooij, J. E.

1990-11-01

We have fabricated high quality small area Nb-Al-Al 2O 3-Nb junctions with SNAP, making use of e-beam evaporation in a 10 -5 Pa diffusion pumped vacuum system. Nominal dimensions of the junctions are 8x8, 4x4 and 2x2 μm 2. We obtain typical current densities of 5-6 × 10 +2A/cm 2 and (critical current) x (subgap resistance) products of 40 mV.

Jump in current at the gap voltage in a superconducting junction

International Nuclear Information System (INIS)

Coombes, J.M.; Carbotte, J.P.

1986-01-01

For many materials not previously considered, we have calculated the jump, at the gap voltage, in the quasiparticle current of a tunnel junction. An empirical relationship between the jump and the effective electron-phonon coupling λ-μ/sup */ previously established is confirmed. Further, a new and equally as accurate correlation is found with the strong coupling index T/sub c//ω/sub ln/, where T/sub c/ is the critical temperature and ω/sub ln/ a specific characteristic phonon energy. A simple formula for the jump which includes a strong-coupling correction is derived and found to fit the observed correlation well. Finally, we study the effect on the jump of unusual values of Coulomb pseudopotential μ/sup */. Also a δ-function electron-phonon spectral density α 2 F(ω) is used to help in the understanding of the range of values that is possible for the jump when α 2 F(ω) is not restricted to realistic shapes

Ballistic Josephson junctions based on CVD graphene

Science.gov (United States)

Li, Tianyi; Gallop, John; Hao, Ling; Romans, Edward

2018-04-01

Josephson junctions with graphene as the weak link between superconductors have been intensely studied in recent years, with respect to both fundamental physics and potential applications. However, most of the previous work was based on mechanically exfoliated graphene, which is not compatible with wafer-scale production. To overcome this limitation, we have used graphene grown by chemical vapour deposition (CVD) as the weak link of Josephson junctions. We demonstrate that very short, wide CVD-graphene-based Josephson junctions with Nb electrodes can work without any undesirable hysteresis in their electrical characteristics from 1.5 K down to a base temperature of 320 mK, and their gate-tuneable critical current shows an ideal Fraunhofer-like interference pattern in a perpendicular magnetic field. Furthermore, for our shortest junctions (50 nm in length), we find that the normal state resistance oscillates with the gate voltage, consistent with the junctions being in the ballistic regime, a feature not previously observed in CVD-graphene-based Josephson junctions.

Elliptic annular Josephson tunnel junctions in an external magnetic field: the statics

DEFF Research Database (Denmark)

Monaco, Roberto; Granata, Carmine; Vettoliere, Antonio

2015-01-01

We have investigated the static properties of one-dimensional planar Josephson tunnel junctions (JTJs) in the most general case of elliptic annuli. We have analyzed the dependence of the critical current in the presence of an external magnetic field applied either in the junction plane...... symmetric electrodes a transverse magnetic field is equivalent to an in-plane field applied in the direction of the current flow. Varying the ellipse eccentricity we reproduce all known results for linear and ring-shaped JTJs. Experimental data on high-quality Nb/Al-AlOx/Nb elliptic annular junctions...

Defect formation in long Josephson junctions

DEFF Research Database (Denmark)

Gordeeva, Anna; Pankratov, Andrey

2010-01-01

We study numerically a mechanism of vortex formation in a long Josephson junction within the framework of the one-dimensional sine-Gordon model. This mechanism is switched on below the critical temperature. It is shown that the number of fluxons versus velocity of cooling roughly scales according...... to the power law with the exponent of either 0.25 or 0.5 depending on the temperature variation in the critical current density....

Steady-state properties of Josephson junctions with direct conductivity

International Nuclear Information System (INIS)

Zubkov, A.A.; Kupriyanov, M.Y.; Semenov, V.K.

1981-01-01

A new criterion for determining the kinetic inductance of Josephson junctions is introduced. The effects of temperature T, the critical temperatures of the superconducting electrodes T/sub c/1 and T/sub c/2, and the weak-link length on the kinetic inductance of ''dirty'' junctions with direct conductivity are analyzed within the framework of the Usadel equations. Numerical calculations show that both a large characteristic voltage and a nearly harmonic dependence of the current on the phase difference of the superconducting-electrode wave functions cannot be obtained by varying the junction parameters

Visualizing supercurrents in 0-{pi} ferromagnetic Josephson tunnel junctions

Energy Technology Data Exchange (ETDEWEB)

Goldobin, Edward; Guerlich, Christian; Gaber, Tobias; Koelle, Dieter; Kleiner, Reinhold [Physikalisches Institut and Center for Collective Quantum Phenomena, Universitaet Tuebingen (Germany); Weides, Martin; Kohlstedt, Hermann [Institute of Solid State Physics, Reserch Center Juelich (Germany)

2009-07-01

So-called 0 and {pi} Josephson junctions can be treated as having positive and negative critical currents. This implies that the same phase shift applied to a Josephson junction causes counterflow of supercurrents in 0 and in {pi} junctions connected in parallel provided they are short in comparison with Josephson penetration depth {lambda}{sub J}. We have fabricated several 0, {pi}, 0-{pi}, 0-{pi}-0 and 20 x (0-{pi}-) planar superconductor-insulator-ferromagnet-superconductor Josephson junctions and studied the spatial supercurrent density distribution j{sub s}(x,y) across the junction area using low temperature scanning electron microscopy. At zero magnetic field we clearly see counterflow of the supercurrents in 0 and {pi} regions. The picture also changes consistently in the applied magnetic field.

Topology-induced critical current enhancement in Josephson networks

International Nuclear Information System (INIS)

Silvestrini, P.; Russo, R.; Corato, V.; Ruggiero, B.; Granata, C.; Rombetto, S.; Russo, M.; Cirillo, M.; Trombettoni, A.; Sodano, P.

2007-01-01

We investigate the properties of Josephson junction networks with inhomogeneous architecture. The networks are shaped as 'square comb' planar lattices on which Josephson junctions link superconducting islands arranged in the plane to generate the pertinent topology. Compared to the behavior of reference linear arrays, the temperature dependencies of the Josephson currents of the branches of the network exhibit relevant differences. The observed phenomena evidence new and surprising behavior of superconducting Josephson arrays

Topology-induced critical current enhancement in Josephson networks

Energy Technology Data Exchange (ETDEWEB)

Silvestrini, P. [Dipartimento d' Ingegneria dell' Informazione, Seconda Universita di Napoli, Aversa (Italy); Istituto di Cibernetica ' E. Caianiello' del CNR, Pozzuoli (Italy)], E-mail: p.silvestrini@cib.na.cnr.it; Russo, R. [Istituto di Cibernetica ' E. Caianiello' del CNR, Pozzuoli (Italy); Corato, V. [Dipartimento d' Ingegneria dell' Informazione, Seconda Universita di Napoli, Aversa (Italy); Ruggiero, B.; Granata, C.; Rombetto, S.; Russo, M. [Istituto di Cibernetica ' E. Caianiello' del CNR, Pozzuoli (Italy); Cirillo, M. [Dipartimento di Fisica and INFM, Universita di Roma ' Tor Vergata' , 00173 Roma (Italy); Trombettoni, A. [International School for Advanced Studies and Sezione INFN, Via Beirut 2/4, 34104 Trieste (Italy); Sodano, P. [International School for Advanced Studies and Sezione INFN, Via Beirut 2/4, 34104 Trieste (Italy); Dipartimento di Fisica, Universita di Perugia, 06123 Perugia, and Sezione INFN, Perugia (Italy); Progetto Lagrange, Fondazione C.R.T. e Fondazione I.S.I., Dipartimento di Fisica, Politecnico di Torino, Corso Duca degli Abruzzi 24, 10124 Torino (Italy)

2007-10-29

We investigate the properties of Josephson junction networks with inhomogeneous architecture. The networks are shaped as 'square comb' planar lattices on which Josephson junctions link superconducting islands arranged in the plane to generate the pertinent topology. Compared to the behavior of reference linear arrays, the temperature dependencies of the Josephson currents of the branches of the network exhibit relevant differences. The observed phenomena evidence new and surprising behavior of superconducting Josephson arrays.

Influence of coupling parameter on current-voltage characteristics of intrinsic Josephson junctions in high-T c superconductors

International Nuclear Information System (INIS)

Shukrinov, Yu.M.; Mahfouzi, F.

2006-01-01

We study the current-voltage characteristics of intrinsic Josephson junctions in high-T c superconductors by numerical calculations and in framework of capacitively coupled Josephson junctions model we obtain the total number of branches. The influence of the coupling parameter α on the current-voltage characteristics at fixed parameter β (β 2 1/β c , where β c is McCumber parameter) and the influence of α on β-dependence of the current-voltage characteristics are investigated. We obtain the α-dependence of the branch's slopes and branch's endpoints. The presented results show new features of the coupling effect on the scheme of hysteresis jumps in current-voltage characteristics of intrinsic Josephson junctions in high-T c superconductors

Nanometer-scale patterning of high-Tc superconductors for Josephson junction-based digital circuits

International Nuclear Information System (INIS)

Wendt, J.R.; Plut, T.A.; Corless, R.F.; Martens, J.S.; Berkowitz, S.; Char, K.; Johansson, M.; Hou, S.Y.; Phillips, J.M.

1994-01-01

A straightforward method for nanometer-scale patterning of high-T c superconductor thin films is discussed. The technique combines direct-write electron beam lithography with well-controlled aqueous etches and is applied to the fabrication of Josephson junction nanobridges in high-quality, epitaxial thin-film YBa 2 Cu 3 O 7 . We present the results of our studies of the dimensions, yield, uniformity, and mechanism of the junctions along with the performance of a representative digital circuit based on these junctions. Direct current junction parameter statistics measured at 77 K show critical currents of 27.5 μA±13% for a sample set of 220 junctions. The Josephson behavior of the nanobridge is believed to arise from the aggregation of oxygen vacancies in the nanometer-scale bridge

High quality factor HTS Josephson junctions on low loss substrates

Energy Technology Data Exchange (ETDEWEB)

Stornaiuolo, D; Longobardi, L; Massarotti, D; Barone, A; Tafuri, F [CNR-SPIN Napoli, Complesso Universitario di Monte Sant' Angelo, via Cinthia, 80126 Napoli (Italy); Papari, G; Carillo, F [NEST, CNR-NANO and Scuola Normale Superiore, Piazza San Silvestro 12, 56127 Pisa (Italy); Cennamo, N [Dipartimento Ingegneria dell' Informazione, Seconda Universita degli Studi di Napoli, via Roma 29, 81031 Aversa (Italy)

2011-04-15

We have extended the off-axis biepitaxial technique to produce YBCO grain boundary junctions on low loss substrates. Excellent transport properties have been reproducibly found, with remarkable values of the quality factor I{sub c}R{sub n} (with I{sub c} the critical current and R{sub n} the normal state resistance) above 10 mV, far higher than the values commonly reported in the literature for high temperature superconductor (HTS) based Josephson junctions. The outcomes are consistent with a picture of a more uniform grain boundary region along the current path. This work supports a possible implementation of grain boundary junctions for various applications including terahertz sensors and HTS quantum circuits in the presence of microwaves.

Properties on niobium-based Josephson tunneling elements in junction microstructures

International Nuclear Information System (INIS)

Albrecht, G.; Richter, J.; Weber, P.

1982-01-01

We describe the fabrication and electrical characteristics of niobium oxide-barrier tunnel junctions with counterelectrodes of lead/lead alloy. Primary attention is directed to the experimental conditions necessary to obtain high-quality tunnel barriers as well as studies on characterizing the atomic structure of the barrier region. In order to study the tunnel barrier homogeneity in the tunneling region the magnetic field dependence of the critical Josephson current is investigated. The I--V characteristics and dependence of the critical Josephson current on temperature are analyzed quantitatively by using a proximity effect model. Finally, we discuss experimental results on the improvement of junction quality by including traces of carbon in the rf argon plasma during the sputter cleaning of niobium base electrodes

Direct current stimulation of the left temporoparietal junction modulates dynamic humor appreciation.

Science.gov (United States)

Slaby, Isabella; Holmes, Amanda; Moran, Joseph M; Eddy, Marianna D; Mahoney, Caroline R; Taylor, Holly A; Brunyé, Tad T

2015-11-11

The aim of this study was to evaluate the influence of transcranial direct current stimulation targeting the left temporoparietal junction (TPJ) on humor appreciation during a dynamic video rating task. In a within-participants design, we targeted the left TPJ with anodal, cathodal, or no transcranial direct current stimulation, centered at electrode site C3 using a 4×1 targeted stimulation montage. During stimulation, participants dynamically rated a series of six stand-up comedy videos for perceived humor. We measured event-related (time-locked to crowd laughter) modulation of humor ratings as a function of stimulation condition. Results showed decreases in rated humor during anodal (vs. cathodal or none) stimulation; this pattern was evident for the majority of videos and was only partially predicted by individual differences in humor style. We discuss the possibility that upregulation of neural circuits involved in the theory of mind and empathizing with others may reduce appreciation of aggressive humor. In conclusion, the present data show that neuromodulation of the TPJ can alter the mental processes underlying humor appreciation, suggesting critical involvement of this cortical region in detecting, comprehending, and appreciating humor.

Effect of colored noise on an overdamped Josephson junction

Science.gov (United States)

Genchev, Z. D.

2001-03-01

In this paper my attention is restricted to stochastic differential equation in phase function φ(t), describing an overdamped Josephson junction. I accept the RSJ (resistively shunted junction) modeling, when the contact characterized by resistance R and critical current I c is under the action of a given direct current I and stochastic current source Ĩ(t) (=0) : {ℏ}/{2 eR }{dφ }/{dt }+I csinφ=I+ Ĩ(t). In our case the thermal noise is a Gaussian process and obeys the Johnson-Nyquistr correlation law C(t)== {ℏ}/{2πR}∫ -∞∞dω ω coth{ℏω}/{2k BT }cosωt. The effective Fokker-Planck equation is derived and the current-voltage characteristics (CVCs) of the Josephson junction are calculated for weakly colored noise. In the limit limℏ→0C(t)= {2k BT }/{R}δ(t) the well-known results for white noise are recovered.

Pinning of Josephson vortex chain in periodically heterogeneous junctions: theory and experiment

International Nuclear Information System (INIS)

Malomed, B.A.; Ustinov, A.V.

1989-01-01

Critical values of the density of extrinsic current of rigid Josephson vortex chain depinning in a long Josephson junction are calculated in terms of the perturbation theory. The dynamics of the chain is considered. In particular, a minimum value of the current density is estimated which permits the chain free motion through the transition on dissipation. The dependence of critical current, Jc, on external magnetic field H is measured for long Josephson junctions Nb-NbO x -Pb with artificial spatially periodic heterogeneities of dielectric barrier. For multiple values of H, the curve Jc(H) is found to display some peaks which, by the theory, are responsible for by an increase in the force of Josephson vortex chain and the heterogeneity lattice are commensurate

Double-barrier junction based dc SQUID

NARCIS (Netherlands)

Bartolomé, M.E.; Brinkman, Alexander; Flokstra, Jakob; Golubov, Alexandre Avraamovitch; Rogalla, Horst

2000-01-01

dc SQUIDs based on double-barrier Nb/Al/AlOx/Al/AlOx/Al/Nb junctions (DBSQs) have been fabricated and tested for the first time. The current–voltage curves have been measured at temperatures down to 1.4 K. The critical current, Ic, dependence on the temperature T is partially described by the

Low temperature properties of spin filter NbN/GdN/NbN Josephson junctions

Energy Technology Data Exchange (ETDEWEB)

Massarotti, D., E-mail: dmassarotti@na.infn.it [Dipartimento di Ingegneria Industriale e dell’Informazione, Seconda Università di Napoli, via Roma 29, 81031 Aversa (CE) (Italy); CNR-SPIN UOS Napoli, Complesso Universitario di Monte Sant’Angelo, via Cinthia, 80126 Napoli (Italy); Caruso, R. [Dipartimento di Fisica, Università degli Studi di Napoli Federico II, Via Cinthia, 80126 Napoli (Italy); CNR-SPIN UOS Napoli, Complesso Universitario di Monte Sant’Angelo, via Cinthia, 80126 Napoli (Italy); Pal, A. [Department of Materials Science and Metallurgy, University of Cambridge, Cambridge CB3 0FS (United Kingdom); Rotoli, G. [Dipartimento di Ingegneria Industriale e dell’Informazione, Seconda Università di Napoli, via Roma 29, 81031 Aversa (CE) (Italy); Longobardi, L. [Dipartimento di Ingegneria Industriale e dell’Informazione, Seconda Università di Napoli, via Roma 29, 81031 Aversa (CE) (Italy); American Physical Society, 1 Research Road, Ridge, New York 11961 (United States); Pepe, G.P. [Dipartimento di Fisica, Università degli Studi di Napoli Federico II, Via Cinthia, 80126 Napoli (Italy); CNR-SPIN UOS Napoli, Complesso Universitario di Monte Sant’Angelo, via Cinthia, 80126 Napoli (Italy); Blamire, M.G. [Department of Materials Science and Metallurgy, University of Cambridge, Cambridge CB3 0FS (United Kingdom); Tafuri, F. [Dipartimento di Ingegneria Industriale e dell’Informazione, Seconda Università di Napoli, via Roma 29, 81031 Aversa (CE) (Italy); CNR-SPIN UOS Napoli, Complesso Universitario di Monte Sant’Angelo, via Cinthia, 80126 Napoli (Italy)

2017-02-15

Highlights: • We study the phase dynamics of ferromagnetic NbN/GdN/NbN Josephson junctions. • The ferromagnetic insulator GdN barrier generates spin-filtering properties. • Spin filter junctions fall in the underdamped regime. • MQT occurs with the same phenomenology as in conventional Josephson junctions. • Dissipation is studied in a wide range of critical current density values. - Abstract: A ferromagnetic Josephson junction (JJ) represents a special class of hybrid system where different ordered phases meet and generate novel physics. In this work we report on the transport measurements of underdamped ferromagnetic NbN/GdN/NbN JJs at low temperatures. In these junctions the ferromagnetic insulator gadolinium nitride barrier generates spin-filtering properties and a dominant second harmonic component in the current-phase relation. These features make spin filter junctions quite interesting also in terms of fundamental studies on phase dynamics and dissipation. We discuss the fingerprints of spin filter JJs, through complementary transport measurements, and their implications on the phase dynamics, through standard measurements of switching current distributions. NbN/GdN/NbN JJs, where spin filter properties can be controllably tuned along with the critical current density (J{sub c}), turn to be a very relevant term of reference to understand phase dynamics and dissipation in an enlarged class of JJs, not necessarily falling in the standard tunnel limit characterized by low J{sub c} values.

Josephson tunnel junctions in a magnetic field gradient

DEFF Research Database (Denmark)

Monaco, R.; Mygind, Jesper; Koshelets, V.P.

2011-01-01

We measured the magnetic field dependence of the critical current of high-quality Nb-based planar Josephson tunnel junctions in the presence of a controllable nonuniform field distribution. We found skewed and slowly changing magnetic diffraction patterns quite dissimilar from the Fraunhofer...

Analytical description of ballistic spin currents and torques in magnetic tunnel junctions

KAUST Repository

Chshiev, M.; Manchon, Aurelien; Kalitsov, A.; Ryzhanova, N.; Vedyayev, A.; Strelkov, N.; Butler, W. H.; Dieny, B.

2015-01-01

In this work we demonstrate explicit analytical expressions for both charge and spin currents which constitute the 2×2 spinor in magnetic tunnel junctions with noncollinear magnetizations under applied voltage. The calculations have been performed

Rectification of Current Responds to Incorporation of Fullerenes into Mixed-Monolayers of Alkanethiolates in Tunneling Junctions

NARCIS (Netherlands)

Qiu, Li; Zhang, Yanxi; Krijger, Theodorus; Qiu, Xinkai; van 't Hof, Patrick; Hummelen, Jan; Chiechi, Ryan

2016-01-01

This paper describes the rectification of current through molecular junctions comprising self-assembled monolayers of decanethiolate through the incorporation of C60 fullerene moieties bearing undecanethiol groups in junctions using eutectic Ga–In (EGaIn) and Au conducting probe AFM (CP-AFM)

Visualization of the current density in Josephson junctions with 0- and {pi}-facets; Visualisierung der Stromverteilung in Josephsonkontakten mit 0- und {pi}-Facetten

Energy Technology Data Exchange (ETDEWEB)

Guerlich, Christian

2010-05-11

With Low-Temperature-Electron-Microscopy (LTSEM) it is possible to analyse the transport properties of solids at low temperatures. In particular it is possible to image the supercurrent density j{sub s} in Josephson junctions. This was demonstrated by comparing TTREM-images with calculated values for j{sub s}. In this thesis ramp-type Nd{sub 2-x}Ce{sub x}CuO{sub 4-y}/Nb-Josephson-junctions (NCCO/Nb) and Josephson junctions with a ferromagnetic interlayer Nb/Al-Al{sub 2}O{sub 3}/NiCu/Nb, so-called SIFS (superconductor-insulator-ferromagnet-superconductor) Josephson junctions were studied.It was demonstrated that LTSEM provides direct imaging of the sign change of the order parameter in superconductors with d{sub x{sup 2}-y{sup 2}}-symmetry. This was a controversial issue over the last decade. A step like variation in the thickness of the F-layer allows the fabrication of linear and annular Josephson junctions with different numbers of 0 and {pi} facets. With the LTSEM 0-, {pi}-, 0-{pi}-, 0-{pi}-0-, 0/2-{pi}-0/2-, 20 x (0-{pi})- as well as square-shaped-, circular- and annular-Josephson-junctions were studied. It was demonstrated, that these junctions are of good quality and have critical current densities up to 42 A/cm{sup 2} at T=4.2 K, which is a record value for SIFS junctions with a NiCu F-layer so far. By comparing the measurements with simulations a first indication of a semifluxon at the 0-{pi}-boundary was found. (orig.)

dc properties of series-parallel arrays of Josephson junctions in an external magnetic field

International Nuclear Information System (INIS)

Lewandowski, S.J.

1991-01-01

A detailed dc theory of superconducting multijunction interferometers has previously been developed by several authors for the case of parallel junction arrays. The theory is now extended to cover the case of a loop containing several junctions connected in series. The problem is closely associated with high-T c superconductors and their clusters of intrinsic Josephson junctions. These materials exhibit spontaneous interferometric effects, and there is no reason to assume that the intrinsic junctions form only parallel arrays. A simple formalism of phase states is developed in order to express the superconducting phase differences across the junctions forming a series array as functions of the phase difference across the weakest junction of the system, and to relate the differences in critical currents of the junctions to gaps in the allowed ranges of their phase functions. This formalism is used to investigate the energy states of the array, which in the case of different junctions are split and separated by energy barriers of height depending on the phase gaps. Modifications of the washboard model of a single junction are shown. Next a superconducting inductive loop containing a series array of two junctions is considered, and this model is used to demonstrate the transitions between phase states and the associated instabilities. Finally, the critical current of a parallel connection of two series arrays is analyzed and shown to be a multivalued function of the externally applied magnetic flux. The instabilities caused by the presence of intrinsic serial junctions in granular high-T c materials are pointed out as a potential source of additional noise

Josephson junctions with ferromagnetic alloy interlayer

Energy Technology Data Exchange (ETDEWEB)

Himmel, Nico

2015-07-23

Josephson junctions are used as active devices in superconducting electronics and quantum information technology. Outstanding properties are their distinct non-linear electrical characteristics and a usually sinusoidal relation between the current and the superconducting phase difference across the junction. In general the insertion of ferromagnetic material in the barrier of a Josephson junction is associated with a suppression of superconducting correlations. But also new phenomena can arise which may allow new circuit layouts and enhance the performance of applications. This thesis presents a systematic investigation for two concepts to fabricate Josephson junctions with a rather uncommon negative critical current. Such devices exhibit an intrinsic phase slip of π between the electrodes, so they are also known as π junctions. Both studies go well beyond existing experiments and in one system a π junction is shown for the first time. All the thin film junctions are based on superconducting Nb electrodes. In a first approach, barriers made from Si and Fe were investigated with respect to the realisation of π junctions by spin-flip processes. The distribution of Fe in the Si matrix was varied from pure layers to disperse compounds. The systematic fabrication of alloy barriers was facilitated by the development of a novel timing-based combinatorial sputtering technique for planetary deposition systems. An orthogonal gradient approach allowed to create binary layer libraries with independent variations of thickness and composition. Second, Nb vertical stroke AlO{sub x} vertical stroke Nb vertical stroke Ni{sub 60}Cu{sub 40} vertical stroke Nb (SIsFS) double barrier junctions were experimentally studied for the occurrence of proximity effect induced order parameter oscillations. Detailed dependencies of the critical current density on the thickness of s-layer and F-layer were acquired and show a remarkable agreement to existing theoretical predictions. Especially

Josephson junctions with ferromagnetic alloy interlayer

International Nuclear Information System (INIS)

Himmel, Nico

2015-01-01

Josephson junctions are used as active devices in superconducting electronics and quantum information technology. Outstanding properties are their distinct non-linear electrical characteristics and a usually sinusoidal relation between the current and the superconducting phase difference across the junction. In general the insertion of ferromagnetic material in the barrier of a Josephson junction is associated with a suppression of superconducting correlations. But also new phenomena can arise which may allow new circuit layouts and enhance the performance of applications. This thesis presents a systematic investigation for two concepts to fabricate Josephson junctions with a rather uncommon negative critical current. Such devices exhibit an intrinsic phase slip of π between the electrodes, so they are also known as π junctions. Both studies go well beyond existing experiments and in one system a π junction is shown for the first time. All the thin film junctions are based on superconducting Nb electrodes. In a first approach, barriers made from Si and Fe were investigated with respect to the realisation of π junctions by spin-flip processes. The distribution of Fe in the Si matrix was varied from pure layers to disperse compounds. The systematic fabrication of alloy barriers was facilitated by the development of a novel timing-based combinatorial sputtering technique for planetary deposition systems. An orthogonal gradient approach allowed to create binary layer libraries with independent variations of thickness and composition. Second, Nb vertical stroke AlO x vertical stroke Nb vertical stroke Ni 60 Cu 40 vertical stroke Nb (SIsFS) double barrier junctions were experimentally studied for the occurrence of proximity effect induced order parameter oscillations. Detailed dependencies of the critical current density on the thickness of s-layer and F-layer were acquired and show a remarkable agreement to existing theoretical predictions. Especially a variation of

A15 Nb-Sn tunnel junction fabrication and properties

International Nuclear Information System (INIS)

Rudman, D.A.; Hellman, F.; Hammond, R.H.; Beasley, M.R.

1984-01-01

We have investigated the deposition conditions necessary to produce optimized films of A15 Nb-Sn (19--26 at. % Sn) by electron-beam codeposition. Reliable high-quality superconducting tunnel junctions can be made on this material by using an oxidized-amorphous silicon overlayer as the tunneling barrier and lead as the counter-electrode. These junctions have been used both as a tool for materials diagnosis and as a probe of the superconducting properties (critical temperature and gap) of the films. Careful control of the substrate temperature during the growth of the films has proved critical to obtain homogeneous samples. When the substrate temperature is properly stabilized, stoichiometric Nb 3 Sn is found to be relatively insensitive to the deposition temperature and conditions. In contrast, the properties of the off-stoichiometry (Sn-poor) material depend strongly on the deposition temperature. For this Sn-poor material the ratio 2Δ/kT/sub c/ at a given composition increases with increasing deposition temperature. This change appears to be due to an increase in the gap at the surface of the material (as measured by tunneling) relative to the critical temperature of the bulk. All the tunnel junctions exhibit some persistent nonidealities in their current-voltage characteristics that are qualitatively insensitive to composition or deposition conditions. In particular, the junctions show excess conduction below the sum of the energy gaps (with onset at the counter-electrode gap) and a broadened current rise at the sum gap. The detailed origins of these problems are not yet understood

Localizing quantum phase slips in one-dimensional Josephson junction chains

International Nuclear Information System (INIS)

Ergül, Adem; Azizoğlu, Yağız; Schaeffer, David; Haviland, David B; Lidmar, Jack; Johansson, Jan

2013-01-01

We studied quantum phase-slip (QPS) phenomena in long one-dimensional Josephson junction series arrays with tunable Josephson coupling. These chains were fabricated with as many as 2888 junctions, where one sample had a separately tunable link in the middle of the chain. Measurements were made of the zero-bias resistance, R 0 , as well as current–voltage characteristics (IVC). The finite R 0 is explained by QPS and shows an exponential dependence on √(E J /E C ) with a distinct change in the exponent at R 0 = R Q = h/4e 2 . When R 0 > R Q , the IVC clearly shows a remnant of the Coulomb blockade, which evolves to a zero-current state with a sharp critical voltage as E J is tuned to a smaller value. The zero-current state below the critical voltage is due to coherent QPSs and we show that these are enhanced when the central link is weaker than all other links. Above the critical voltage, a negative, differential resistance is observed, which nearly restores the zero-current state. (paper)

Properties of all YBa2Cu3O7 Josephson edge junctions prepared by in situ laser ablation deposition

International Nuclear Information System (INIS)

Koren, G.; Aharoni, E.; Polturak, E.; Cohen, D.

1991-01-01

Thin-film YBa 2 Cu 3 O 7 -YBa 2 Cu 3 O 7 edge junctions of 0.4x10 μm 2 cross section were prepared in situ by a multistep laser ablation deposition process. The fabrication time was about 3 h and the yield of good devices was 50%. Typical junctions reached zero resistance at 72 K and had a critical current density J c of 300 A/cm 2 at 70 K. Their J c as a function of temperature increased slowly with decreasing temperature down to 65 K and much faster below it. In the region of low J c we observed suppression of the critical current by a magnetic field. Under microwave radiation clear Shapiro steps were observed whose magnitude versus the microwave field agreed qualitatively with the resistively shunted junction model of a current biased junction

Electronic thermometry in tunable tunnel junction

Science.gov (United States)

Maksymovych, Petro

2016-03-15

A tunable tunnel junction thermometry circuit includes a variable width tunnel junction between a test object and a probe. The junction width is varied and a change in thermovoltage across the junction with respect to the change in distance across the junction is determined. Also, a change in biased current with respect to a change in distance across the junction is determined. A temperature gradient across the junction is determined based on a mathematical relationship between the temperature gradient, the change in thermovoltage with respect to distance and the change in biased current with respect to distance. Thermovoltage may be measured by nullifying a thermoelectric tunneling current with an applied voltage supply level. A piezoelectric actuator may modulate the probe, and thus the junction width, to vary thermovoltage and biased current across the junction. Lock-in amplifiers measure the derivatives of the thermovoltage and biased current modulated by varying junction width.

Dynamics of a nanoscale Josephson junction probed by scanning tunneling microscopy

Energy Technology Data Exchange (ETDEWEB)

Ast, Christian R.; Jaeck, Berthold; Eltschka, Matthias; Etzkorn, Markus [Max-Planck-Institut fuer Festkoerperforschung, Stuttgart (Germany); Kern, Klaus [Max-Planck-Institut fuer Festkoerperforschung, Stuttgart (Germany); Institut de Physique de la Matiere Condensee, EPFL, Lausanne (Switzerland)

2015-07-01

The Josephson effect is an intriguing phenomenon as it presents an interplay of different energy scales, such as the Josephson energy ε{sub J} (critical current), charging energy ε{sub C}, and temperature T. Using a scanning tunneling microscope (STM) operating at a base temperature of 15 mK, we create a nanoscale superconductor-vacuum-superconductor tunnel junction in an extremely underdamped regime (Q>>10). We observe extremely small retrapping currents also owing to strongly reduced ohmic losses in the well-developed superconducting gaps. While formally operating in the zero temperature limit, i.e. the temperature T is smaller than the Josephson plasma frequency ω{sub J} (k{sub B}T<<ℎω{sub J}=√(8ε{sub J}ε{sub C})), experimentally other phenomena, such as stray photons, may perturb the Josephson junction, leading to an effectively higher temperature. The dynamics of the Josephson junction can be addressed experimentally by looking at characteristic parameters, such as the switching current and the retrapping current. We discuss the dynamics of the Josephson junction in the context of reaching the zero temperature limit.

Electrical analog of a Josephson junction

International Nuclear Information System (INIS)

Goldman, A.M.

1979-01-01

It is noted that a mathematical description of the phase-coupling of two oscillators synchronized by a phase-lock-loop under the influence of thermal white noise is analogous to that of the phase coupling of two superconductors in a Josephson junction also under the influence of noise. This analogy may be useful in studying threshold instabilities of the Josephson junction in regimes not restricted to the case of large damping. This is of interest because the behavior of the mean voltage near the threshold current can be characterized by critical exponents which resemble those exhibited by an order parameter of a continuous phase transition. As it is possible to couple a collection of oscillators together in a chain, the oscillator analogy may also be useful in exploring the dynamics and statistical mechanics of coupled junctions

Effect of the microscopic correlated-pinning landscape on the macroscopic critical current density in YBCO films

Science.gov (United States)

Ghigo, G.; Chiodoni, A.; Gerbaldo, R.; Gozzelino, L.; Laviano, F.; Mezzetti, E.; Minetti, B.; Camerlingo, C.

This paper deals with the mechanisms controlling the critical current density vs. field behavior in YBCO films. We base our analysis on a suitable model concerning the existence of a network of intergrain Josephson junctions whose length is modulated by defects. Irradiation with 0.25 GeV Au ions provide a useful tool to check the texture of the sample, in particular to give a gauge length reference to separate “weak” links and high- J c links.

All-electric-controlled spin current switching in single-molecule magnet-tunnel junctions

Science.gov (United States)

Zhang, Zheng-Zhong; Shen, Rui; Sheng, Li; Wang, Rui-Qiang; Wang, Bai-Gen; Xing, Ding-Yu

2011-04-01

A single-molecule magnet (SMM) coupled to two normal metallic electrodes can both switch spin-up and spin-down electronic currents within two different windows of SMM gate voltage. Such spin current switching in the SMM tunnel junction arises from spin-selected single electron resonant tunneling via the lowest unoccupied molecular orbit of the SMM. Since it is not magnetically controlled but all-electrically controlled, the proposed spin current switching effect may have potential applications in future spintronics.

Axial p-n junction and space charge limited current in single GaN nanowire

Science.gov (United States)

Fang, Zhihua; Donatini, Fabrice; Daudin, Bruno; Pernot, Julien

2018-01-01

The electrical characterizations of individual basic GaN nanostructures, such as axial nanowire (NW) p-n junctions, are becoming indispensable and crucial for the fully controlled realization of GaN NW based devices. In this study, electron beam induced current (EBIC) measurements were performed on two single axial GaN p-n junction NWs grown by plasma-assisted molecular beam epitaxy. I-V characteristics revealed that both ohmic and space charge limited current (SCLC) regimes occur in GaN p-n junction NW. Thanks to an improved contact process, both the electric field induced by the p-n junction and the SCLC in the p-part of GaN NW were disclosed and delineated by EBIC signals under different biases. Analyzing the EBIC profiles in the vicinity of the p-n junction under 0 V and reverse bias, we deduced a depletion width in the range of 116-125 nm. Following our previous work, the acceptor N a doping level was estimated to be 2-3 × 1017 at cm-3 assuming a donor level N d of 2-3 × 1018 at cm-3. The hole diffusion length in n-GaN was determined to be 75 nm for NW #1 and 43 nm for NW #2, demonstrating a low surface recombination velocity at the m-plane facet of n-GaN NW. Under forward bias, EBIC imaging visualized the electric field induced by the SCLC close to p-side contact, in agreement with unusual SCLC previously reported in GaN NWs.

Axial p-n junction and space charge limited current in single GaN nanowire.

Science.gov (United States)

Fang, Zhihua; Donatini, Fabrice; Daudin, Bruno; Pernot, Julien

2018-01-05

The electrical characterizations of individual basic GaN nanostructures, such as axial nanowire (NW) p-n junctions, are becoming indispensable and crucial for the fully controlled realization of GaN NW based devices. In this study, electron beam induced current (EBIC) measurements were performed on two single axial GaN p-n junction NWs grown by plasma-assisted molecular beam epitaxy. I-V characteristics revealed that both ohmic and space charge limited current (SCLC) regimes occur in GaN p-n junction NW. Thanks to an improved contact process, both the electric field induced by the p-n junction and the SCLC in the p-part of GaN NW were disclosed and delineated by EBIC signals under different biases. Analyzing the EBIC profiles in the vicinity of the p-n junction under 0 V and reverse bias, we deduced a depletion width in the range of 116-125 nm. Following our previous work, the acceptor N a doping level was estimated to be 2-3 × 10 17 at cm -3 assuming a donor level N d of 2-3 × 10 18 at cm -3 . The hole diffusion length in n-GaN was determined to be 75 nm for NW #1 and 43 nm for NW #2, demonstrating a low surface recombination velocity at the m-plane facet of n-GaN NW. Under forward bias, EBIC imaging visualized the electric field induced by the SCLC close to p-side contact, in agreement with unusual SCLC previously reported in GaN NWs.

Josephson current in ballistic graphene Corbino disk

Science.gov (United States)

Abdollahipour, Babak; Mohammadkhani, Ramin; Khalilzadeh, Mina

2018-06-01

We solve Dirac-Bogoliubov-De-Gennes (DBdG) equation in a superconductor-normal graphene-superconductor (SGS) junction with Corbino disk structure to investigate the Josephson current through this junction. We find that the critical current Ic has a nonzero value at Dirac point in which the concentration of the carriers is zero. We show this nonzero critical current depends on the system geometry and it decreases monotonically to zero by decreasing the ratio of the inner to outer radii of the Corbino disk (R1 /R2), while in the limit of R1 /R2 → 1 it scales like a diffusive Corbino disk. The product of the critical current and the normal-state resistance IcRN increases by increasing R1 /R2 and attains the same value for the wide and short rectangular structure at the limit of R1 /R2 → 1 at zero doping. These results reveals the pseudodiffusive behavior of the graphene Corbino Josephson junction similar to the rectangular structure at the zero doping.

Macroscopic quantum tunneling in 1 μm Nb junctions below 100mK

International Nuclear Information System (INIS)

Voss, R.F.; Webb, R.A.

1981-01-01

The transition probabilities out of the superconducting state of low current density 1 μm Nb Josephson junctions with capacitance < 0.15 pF have been measured as a function of temperature T down to 3 mK. Below 100 mK the distribution widths become independent of T. Junctions with critical currents that differ by an order of magnitude have the same dependence of relative width on T. The low T results are interpreted in terms of quantum tunneling of the (macroscopic) junction phase. The observed low temperature widths are smaller than expected indicating the necessity of corrections to the simple WKB tunneling rates. (orig.)

Barrier Parameters and Current Transport Characteristics of Ti/ p-InP Schottky Junction Modified Using Orange G (OG) Organic Interlayer

Science.gov (United States)

Sreenu, K.; Venkata Prasad, C.; Rajagopal Reddy, V.

2017-10-01

A Ti/Orange G/ p-InP metal/interlayer/semiconductor (MIS) junction has been prepared with Orange G (OG) organic layer by electron beam evaporation and spin coating processes. The electrical properties of Ti/ p-InP metal/semiconductor (MS) and Ti/OG/ p-InP MIS junctions have been analyzed based on current-voltage ( I- V) and capacitance-voltage ( C- V) characteristics. The MIS junction exhibited higher rectifying behavior than the MS junction. The higher barrier height (BH) of the MIS junction compared with the MS junction indicates effective modification by the OG layer. Also, the BH, ideality factor, shunt resistance, and series resistance were extracted based on the I- V characteristic, Cheung's and Norde's methods, and the ΨS- V plot. The BH evaluated by Cheung's and Norde's methods and the ΨS- V plot was shown to be similar, confirming the reliability and validity of the methods applied. The extracted interface state density ( N SS) of the MIS junction was less than for the MS junction, revealing that the OG organic layer reduced the N SS value. Analysis demonstrated that, in the lower bias region, the reverse current conduction mechanism was dominated by Poole-Frenkel emission for both the MS and MIS junction. Meanwhile, in the higher bias region, Schottky emission governed the reverse current conduction mechanism. The results suggest that such OG layers have potential for use in high-quality electronic devices.

Experimental observation of the transition from weak link to tunnel junction

International Nuclear Information System (INIS)

Muller, C.J.; Ruitenbeek, J.M. van; Jongh, L.J. de

1992-01-01

An extension to Morelands break junction technique is developed in order to obtain a clean and stable, mechanically adjustable junction. As a function of an externally applied force the coupling of two electrodes can be varied in vacuum. Experiments are described of a junction with niobium electrodes at 4.2 K which undergo a continuous change in normal resistance R N , from 1 to 10 9 Ω upon applying an increasing force. In this resistance range we discern a transition from a weak link regime to a tunnel regime. The current voltage (I-V) curves are reproducible upon adjustment changes in the whole resistance range. In the weak link regime the two electrodes of the junction are in physical contact with each other. The product of the critical current and normal resistance is compared with predictions of Ambegaokar-Baratoff and Kulik-Omelyanchuk. The product of the excess current and normal resistance shows a logarithmic increase for low R N values and decreases for the highest R N values in the weak link regime. Subharmonic gap structure, originating from multiple Andreev reflections is observed over a wide range of R N . In the transition regime the two electrodes are not in contact but there is still a large overlap of the superconducting and quasiparticle wave functions. In this regime a finite slope in the ''critical current part'' in the current voltage curve is observed. The I-V curves show features characteristic for both a weak link and a tunnel junction. In the tunnel regime there exists a vacuum gap between the electrodes and the Josephson coupling is suppressed. A considerable subgap current is observed, where the product of the subgap current and normal resistance is constant over almost four orders of magnitude of R N . A decreasing conductance near zero bias shows up in this regime. The normal resistance exhibits an exponential behaviour upon variations in the vacuum gap. (orig./WL)

Planar intrinsic Josephson junctions with in-plane aligned YBCO films

CERN Document Server

Zhang, L; Kobayashi, T; Goto, T; Mukaida, M

2002-01-01

Planar type devices were fabricated by patterning in-plane aligned YBa sub 2 Cu sub 3 O sub 7 sub - subdelta (YBCO) films. The current-voltage characteristics along the c-axis at various temperatures and oxygen contents were measured. The current voltage curves showing supercurrent and hysteresis were obtained for the samples annealed at an oxygen pressure of 1.3 x 10 sup 4 Pa, while the supercurrent and hysteresis became smaller and even disappeared as the oxygen pressure decreased. The relationships between the critical currents and temperatures are similar to those of d-wave superconducting tunnel junctions. These results indicate the formation of stacks of intrinsic Josephson junctions, which are useful for developing high-frequency electron devices.

Planar intrinsic Josephson junctions with in-plane aligned YBCO films

International Nuclear Information System (INIS)

Zhang, L; Moriya, M; Kobayashi, T; Goto, T; Mukaida, M

2002-01-01

Planar type devices were fabricated by patterning in-plane aligned YBa 2 Cu 3 O 7-δ (YBCO) films. The current-voltage characteristics along the c-axis at various temperatures and oxygen contents were measured. The current voltage curves showing supercurrent and hysteresis were obtained for the samples annealed at an oxygen pressure of 1.3 x 10 4 Pa, while the supercurrent and hysteresis became smaller and even disappeared as the oxygen pressure decreased. The relationships between the critical currents and temperatures are similar to those of d-wave superconducting tunnel junctions. These results indicate the formation of stacks of intrinsic Josephson junctions, which are useful for developing high-frequency electron devices

Tunnel currents produced by defects in p-n junctions of GaAs grown on vapor phase

International Nuclear Information System (INIS)

Barrales Guadarrama, V R; Rodríguez Rodriguez, E M; Barrales Guadarrama, R; Reyes Ayala, N

2017-01-01

With the purpose of assessing if the epitaxy on vapor phase technique “Close Space Vapor Deposition (CSVT)” is capable of produce thin films with adequate properties in order to manufacture p-n junctions, a study of invert and direct current was developed, in a temperature range of 94K to 293K, to junctions p-n of GaAs grown through the technique CSVT. It is shown that the dominant current, within the range 10 -7 to 10 -2 A, is consistent with a currents model of the type of internal emission form field, which shows these currents are due to the presence of localized states in the band gap. (paper)

Temperature dependence of the cosphi conductance in Josephson tunnel junctions determined from plasma resonance experiments

DEFF Research Database (Denmark)

Pedersen, Niels Falsig; Sørensen, O. H.; Mygind, Jesper

1978-01-01

The microwave response at 9 GHz of Sn-O-Sn tunnel-junction current biased at zero dc voltage has been measured just below the critical temperature Tc of the Sn films. The temperature dependence of the cosφ conductance is determined from the resonant response at the junction plasma frequency fp...

Phase dynamics of a Josephson junction ladder driven by modulated currents

International Nuclear Information System (INIS)

Kawaguchi, T.

2011-01-01

Phase dynamics of disordered Josephson junction ladders (JJLs) driven by external currents which are spatially and temporally modulated is studied using a numerical simulation based on a random field XY model. This model is considered theoretically as an effective model of JJLs with structural disorder in a magnetic field. The spatiotemporal modulation of external currents causes peculiar dynamical effects of phases in the system under certain conditions, such as the directed motion of phases and the mode-locking in the absence of dc currents. We clarify the details of effects of the spatiotemporal modulation on the phase dynamics.

Analysis of the ac SQUID with low inductance and low critical current

DEFF Research Database (Denmark)

Sørensen, O. H.

1976-01-01

The properties of the ac SQUID magnetometer has been analyzed. The results are valid in the low-inductance low-critical-current regime, where the Lri0 producted is belowthe value at which the relation between the enclosed and externally applied magnetic dc flux becomes reentrant. The effects...... of the screening current circulating in the SQUID ring as well as of the SQUID-ring time constant, tau-Lr/R9 are taken into account. Here LR IS THE SQUID-ring inductance, and R is the shunt resistance in the shunted junction model assumed to describe the weak link. It is shown that for finite values of omegatau...... constriuctively with the result that the optimal response occurs at a definite and finite value of omegatau. If omegatau is increased beyond this optimal value the weak link behavior is dominated by the Ohmic current channel implying that only if the shunt conductance contains a term depending...

Multiwall carbon nanotube Josephson junctions with niobium contacts

International Nuclear Information System (INIS)

Pallecchi, Emiliano

2009-01-01

The main goal of this thesis is the investigation of dissipationless supercurrent in multiwall carbon nanotubes embedded in a controlled environment. The experimental observation of a dissipationless supercurrent in gated carbon nanotubes remains challenging because of its extreme sensitivity to the environment and to noise fluctuations. We address these issues by choosing niobium as a superconductor and by designing an optimized on chip electromagnetic environment. The environment is meant to reduce the suppression of the supercurrent and allows to disentangle the effects of thermal fluctuations from the intrinsic behavior of the junction. This is crucial for the extraction of the value critical current from the measured data. When the transparency of the contacts is high enough we observed a fully developed supercurrent and we found that it depends on the gate voltage in a resonant manner. In average the critical current increases when the gate is tuned more negative, reflecting the increase of the transparency of the contacts, while the resonant behavior is due to quantum interference effects. We measured the temperature dependence of the switching current and we analyzed the data with an extended RCSJ model that allow to extract the critical current from the experimental data. The measured critical currents are very high with respect to previous reports on gated devices. At positive gate voltage the contacts transparency is lowered and Coulomb blockade is observed. This allows to use Coulomb blockade measurements to further characterize the nanotube and to study the physics of a quantum dot coupled to superconducting leads. The last part of this thesis is dedicated to the measurements of a carbon nanotube Josephson junction in the Coulomb blockade regime. (orig.)

Multiwall carbon nanotube Josephson junctions with niobium contacts

Energy Technology Data Exchange (ETDEWEB)

Pallecchi, Emiliano

2009-02-17

The main goal of this thesis is the investigation of dissipationless supercurrent in multiwall carbon nanotubes embedded in a controlled environment. The experimental observation of a dissipationless supercurrent in gated carbon nanotubes remains challenging because of its extreme sensitivity to the environment and to noise fluctuations. We address these issues by choosing niobium as a superconductor and by designing an optimized on chip electromagnetic environment. The environment is meant to reduce the suppression of the supercurrent and allows to disentangle the effects of thermal fluctuations from the intrinsic behavior of the junction. This is crucial for the extraction of the value critical current from the measured data. When the transparency of the contacts is high enough we observed a fully developed supercurrent and we found that it depends on the gate voltage in a resonant manner. In average the critical current increases when the gate is tuned more negative, reflecting the increase of the transparency of the contacts, while the resonant behavior is due to quantum interference effects. We measured the temperature dependence of the switching current and we analyzed the data with an extended RCSJ model that allow to extract the critical current from the experimental data. The measured critical currents are very high with respect to previous reports on gated devices. At positive gate voltage the contacts transparency is lowered and Coulomb blockade is observed. This allows to use Coulomb blockade measurements to further characterize the nanotube and to study the physics of a quantum dot coupled to superconducting leads. The last part of this thesis is dedicated to the measurements of a carbon nanotube Josephson junction in the Coulomb blockade regime. (orig.)

Phase transition in a modified square Josephson-junction array

CERN Document Server

Han, J

1999-01-01

We study the phase transition in a modified square proximity-coupled Josephson-junction array with small superconducting islands at the center of each plaquette. We find that the modified square array undergoes a Kosterlitz-Thouless-Berezinskii-like phase transition, but at a lower temperature than the simple square array with the same single-junction critical current. The IV characteristics, as well as the phase transition, resemble qualitatively those of a disordered simple square array. The effects of the presence of the center islands in the modified square array are discussed.

Nonlinearity in superconductivity and Josephson junctions

International Nuclear Information System (INIS)

Lazarides, N.

1995-01-01

Within the framework of the Bardeen, Cooper and Schrieffers (BCS) theory, the influence of anisotropy on superconducting states are investigated. Crystal anisotropy exists in un-conventional low temperature superconductors as e.g. U 1-x Th x Be 13 and in high temperature superconductors. Starting from a phenomenological pairing interaction of the electrons or holes, the BCS approach is used to derive a set of coupled nonlinear algebraic equations for the momentum dependent gap parameter. The emphasis is put on bifurcation phenomena between s-, d-wave and mixed s- and d-wave symmetry and the influence on measurable quantities as the electron specific heat, spin susceptibility and Josephson tunnelling. Pitch-fork and perturbed pitch-fork bifurcations have been found separating s- and d-wave superconducting states from mixed s- and d-wave states. The additional superconducting states give rise to jumps in the electron specific heat below the transition temperature. These jumps are rounded in the case of perturbed pitch-fork bifurcations. An experiment to measure the sign of the interlayer interaction using dc SQUIDS is suggested. The Ambegaokar-Baratoff formalism has been used for calculating the quasiparticle current and the two phase coherent tunnelling currents in a Josephson junction made of anisotropic superconductors. It is shown that anisotropy can lead to a reduction in the product of the normal resistance and the critical current. For low voltages across the junction the usual resistively shunted Josephson model can be used. Finally, bunching in long circular Josephson junctions and suppression of chaos in point junctions have been investigated. (au) 113 refs

Long Josephson tunnel junctions with doubly connected electrodes

DEFF Research Database (Denmark)

Monaco, R.; Mygind, J.; Koshelets, V. P.

2012-01-01

of such experiments, the number of magnetic flux quanta spontaneously trapped in a superconducting loop was measured by means of a long Josephson tunnel junction built on top of the loop itself. We have analyzed this system and found a number of interesting features not occurring in the conventional case with simply...... connected electrodes. In particular, the fluxoid quantization results in a frustration of the Josephson phase, which, in turn, reduces the junction critical current. Further, the possible stable states of the system are obtained by a self-consistent application of the principle of minimum energy...

Colossal X-Ray-Induced Persistent Photoconductivity in Current-Perpendicular-to-Plane Ferroelectric/Semiconductor Junctions

KAUST Repository

Hu, Weijin; Paudel, Tula R.; Lopatin, Sergei; Wang, Zhihong; Ma, He; Wu, Kewei; Bera, Ashok; Yuan, Guoliang; Gruverman, Alexei; Tsymbal, Evgeny Y.; Wu, Tao

2017-01-01

. So far, PPC has been observed in bulk materials and thin-film structures, where the current flows in the plane, limiting the magnitude of the effect. Here using epitaxial Nb:SrTiO3/Sm0.1Bi0.9FeO3/Pt junctions with a current-perpendicular-to-plane

Critical current in nonhomogeneous YBCO coated conductors

International Nuclear Information System (INIS)

Rostila, L; Mikkonen, R; Lehtonen, J

2008-01-01

The critical current of an YBCO tape is determined by the magnetic field inside the YBCO layer and the quality of YBCO material. In thick YBCO layers the average critical current density is reduced by the self-field and decreased material quality. In this paper the combined influence of the material nonhomogeneities and self-field on the critical current of YBCO tapes is scrutinised. First, the zero field critical current density was assumed to decrease along the YBCO thickness. Secondly, the possible defects created in the cutting of YBCO tapes were modelled as a function of lowered critical current density near the tape edges. In both cases the critical current was computed numerically with integral element method. The results suggest that the variation of zero field critical current density, J c0 , along the tape thickness does not effect on the critical current if the mean value of J c0 is kept constant. However, if J c0 is varied along the tape width the critical current can change due to the variated self-field. The computations can be used to determine when it is possible to evaluate the average zero field critical current density from a voltage-current measurement with an appropriate accuracy

A dense voltage-mode Josephson memory cell insensitive to systematic variations in critical current density

International Nuclear Information System (INIS)

Bradley, P.; Van Duzer, T.

1985-01-01

A destructive read-out (DRO) memory cell using three Josephson junctions has been devised whose operation depends only on the ratio of critical currents and application of the proper read/write voltages. The effects of run-to-run and across-thewafer variations in I /SUB c/ are minimized since all three junctions for a given cell are quite close to each other. Additional advantages are: immunity from flux trapping, high circuit density, and fast switching. Since destructive read-out is generally undesirable, a self-rewriting scheme is necessary. Rows and columns of cells with drivers and sense circuits, as well as small memory arrays and decoders have been simulated on SPICE. Power dissipation of cells and bias circuits for a 1K-bit RAM is estimated at about 2 mW. Inclusion of peripheral circuitry raises this by as much as a factor of five depending on the driving scheme and speed desired. Estimated access time is appreciably less than a nanosecond. Preliminary experimental investigations are reported

Inductance analysis of superconducting quantum interference devices with 3D nano-bridge junctions

Science.gov (United States)

Wang, Hao; Yang, Ruoting; Li, Guanqun; Wu, Long; Liu, Xiaoyu; Chen, Lei; Ren, Jie; Wang, Zhen

2018-05-01

Superconducting quantum interference devices (SQUIDs) with 3D nano-bridge junctions can be miniaturized into nano-SQUIDs that are able to sense a few spins in a large magnetic field. Among all device parameters, the inductance is key to the performance of SQUIDs with 3D nano-bridge junctions. Here, we measured the critical-current magnetic flux modulation curves of 12 devices with three design types using a current strip-line directly coupled to the SQUID loop. A best flux modulation depth of 71% was achieved for our 3D Nb SQUID. From the modulation curves, we extracted the inductance values of the current stripe-line in each design and compared them with the corresponding simulation results of InductEX. In this way, London penetration depths of 110 and 420 nm were determined for our Nb (niobium) and NbN (niobium nitride) films, respectively. Furthermore, we showed that inductances of 11 and 119 pH for Nb and NbN 3D nano-bridge junctions, respectively, dominated the total inductance of our SQUID loops which are 23 pH for Nb and 255 pH for NbN. A screening parameter being equal to one suggests optimal critical currents of 89.6 and 8.1 μA for Nb and NbN SQUIDs, respectively. Additionally, intrinsic flux noise of 110 ± 40 nΦ0/(Hz)1/2 is calculated for the Nb SQUIDs with 3D nano-bridge junctions by Langevin simulation.

Current-ripple effect on superconductive dc critical current measurements

International Nuclear Information System (INIS)

Goodrich, L.F.; Bray, S.L.; Clark, A.F.

1988-01-01

The effect of sample-current power-supply ripple on dc critical current measurement in multifilamentary NbTi superconductors was evaluated. In general the ripple in a current supply became more significant above 500 A because effective filtering was hard to achieve. Ripple also caused noise at the input of the voltmeter used for the measurements. The quantitative effect of current ripple was studied using a battery current supply modified to allow the creation of ripple current with variable frequency and amplitude. Problems common to all large-conductor critical current measurements are discussed

Evaluation of the Electronic Structure of Single-Molecule Junctions Based on Current-Voltage and Thermopower Measurements: Application to C60 Single-Molecule Junction.

Science.gov (United States)

Komoto, Yuki; Isshiki, Yuji; Fujii, Shintaro; Nishino, Tomoaki; Kiguchi, Manabu

2017-02-16

The electronic structure of molecular junctions has a significant impact on their transport properties. Despite the decisive role of the electronic structure, a complete characterization of the electronic structure remains a challenge. This is because there is no straightforward way of measuring electron spectroscopy for an individual molecule trapped in a nanoscale gap between two metal electrodes. Herein, a comprehensive approach to obtain a detailed description of the electronic structure in single-molecule junctions based on the analysis of current-voltage (I-V) and thermoelectric characteristics is described. It is shown that the electronic structure of the prototypical C 60 single-molecule junction can be resolved by analyzing complementary results of the I-V and thermoelectric measurement. This combined approach confirmed that the C 60 single-molecule junction was highly conductive with molecular electronic conductances of 0.033 and 0.003 G 0 and a molecular Seebeck coefficient of -12 μV K -1 . In addition, we revealed that charge transport was mediated by a LUMO whose energy level was located 0.5≈0.6 eV above the Fermi level of the Au electrode. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

rf power dependence of subharmonic voltage spectra of two-dimensional Josephson-junction arrays

International Nuclear Information System (INIS)

Hebboul, S.E.; Garland, J.C.

1993-01-01

We have measured the rf-bias-current dependence of the ν/2 subharmonic spectral response of planar 300x300 Nb-Au-Nb proximity-coupled Josephson-junction arrays. The ν/2 subharmonic voltage spectrum was examined at two rf-bias frequencies, ν/ν c ∼1.4, 2.0 (ν c ∼120 MHz), and in applied magnetic fields corresponding to f=0,1/2 flux quantum per plaquette. The measurements were compared to analytical predictions for an rf-biased asymmetric superconducting quantum interference device with non-negligble loop inductance and large rf-bias-current amplitudes, based on the resistively shunted Josephson-junction model. Reasonable agreement was found between experiment and theory, suggesting that a possible origin for the observed subharmonic behavior in arrays involves an interplay between array plaquette inductances and junction critical-current variations

Response of thick-film bridge junction of high-Tc YBCO to nuclear radiation

International Nuclear Information System (INIS)

Ding Honglin; Wang Jun; Zhang Wanchang

1992-01-01

The response of thick-film Josephson junction based on high-T c YBCO to nuclear radiation is described. The lengths of the junction are 2000 μm, 1000 μm, and 500 μm and the widths are 500 μm, 300 μm and 100 μm. When the junction is irradiated by low energy γ-ray of 59.5 KeV from 241 Am at temperature of 77 K and the transport current I b is more than I c , the authors obtained the reduction of 1.6 mA of critical current and volt-signal as high as 17 μV without amplifier. It has been noted that the signal amplitude is related to the distance between the junction and the radiation source. Finally the advantages and shortcomings of detector based on thick films of high T c YBCO are discussed in the paper

Gap Junctions

Science.gov (United States)

Nielsen, Morten Schak; Axelsen, Lene Nygaard; Sorgen, Paul L.; Verma, Vandana; Delmar, Mario; Holstein-Rathlou, Niels-Henrik

2013-01-01

Gap junctions are essential to the function of multicellular animals, which require a high degree of coordination between cells. In vertebrates, gap junctions comprise connexins and currently 21 connexins are known in humans. The functions of gap junctions are highly diverse and include exchange of metabolites and electrical signals between cells, as well as functions, which are apparently unrelated to intercellular communication. Given the diversity of gap junction physiology, regulation of gap junction activity is complex. The structure of the various connexins is known to some extent; and structural rearrangements and intramolecular interactions are important for regulation of channel function. Intercellular coupling is further regulated by the number and activity of channels present in gap junctional plaques. The number of connexins in cell-cell channels is regulated by controlling transcription, translation, trafficking, and degradation; and all of these processes are under strict control. Once in the membrane, channel activity is determined by the conductive properties of the connexin involved, which can be regulated by voltage and chemical gating, as well as a large number of posttranslational modifications. The aim of the present article is to review our current knowledge on the structure, regulation, function, and pharmacology of gap junctions. This will be supported by examples of how different connexins and their regulation act in concert to achieve appropriate physiological control, and how disturbances of connexin function can lead to disease. © 2012 American Physiological Society. Compr Physiol 2:1981-2035, 2012. PMID:23723031

Magnetic interference patterns in 0-pi superconductor/insulator/ferromagnet/superconductor Josephson junctions: Effects of asymmetry between 0 and pi regions

OpenAIRE

Kemmler, M.; Weides, M.; Goldobin, E.; Weiler, M.; Opel, M.; Goennenwein, S.T.B.; Vasenko, A.S.; Golubov, A.A.; Kohlstedt, H.; Koelle, D.; Kleiner, R.

2010-01-01

We present a detailed analysis of the dependence of the critical current I-c on an in-plane magnetic field B of 0, pi, and 0-pi superconductor-insulator-ferromagnet-superconductor Josephson junctions. I-c(B) of the 0 and the pi junction closely follows a Fraunhofer pattern, indicating a homogeneous critical current density j(c)(x). The maximum of I-c(B) is slightly shifted along the field axis, pointing to a small remanent in-plane magnetization of the F-layer along the field axis. I-c(B) of ...

Dissipative current in SIFS Josephson junctions

NARCIS (Netherlands)

Vasenko, A.; Kawabata, S.; Golubov, Alexandre Avraamovitch; Kupriyanov, M. Yu; Hekking, F.W.J.

2010-01-01

We investigate superconductor/insulator/ferromagnet/superconductor (SIFS) tunnel Josephson junctions in the dirty limit, using the quasiclassical theory. We consider the case of a strong tunnel barrier such that the left S layer and the right FS bilayer are decoupled. We calculate quantitatively the

Onset of chaos and dc current-voltage characteristics of rf-driven Josephson junctions in the low-frequency regime

International Nuclear Information System (INIS)

Chi, C.C.; Vanneste, C.

1990-01-01

A comprehensive picture of the dc current-voltage (I-V) characteristics of rf-driven Josephson junctions in the low-frequency regime is presented. The boundary of the low-frequency regime is roughly defined by the junction characteristic frequency for overdamped junctions, and by the inverse of the junction damping time for underdamped junctions. An adiabatic model valid for the low-frequency regime is used to describe the overall shapes of the I-V curves, which is in good agreement with both the numerical simulations and the experimental results. For underdamped junctions, the Shapiro steps are the prominent features on the I-V curves if the rf frequency is sufficiently below the boundary. As the rf frequency is increased towards the boundary, large negatively-going tails on top of the Shapiro steps are observed both experimentally and numerically. Numerical simulations using the resistively- and capacitively-shunted-junction model (RCSJ model) reveal that the negatively-going tail is a signature of the low-frequency boundary of the junction chaotic regime. With use of the adiabatic model and the existence of plasma oscillations for underdamped junctions, the onset of chaos and its effect on the Shapiro steps can be fully explained. The high-frequency limit of the adiabatic model and the chaotic behavior of the Josephson junctions beyond the low-frequency regime are also briefly discussed

Josephson tunnel junctions in niobium films

International Nuclear Information System (INIS)

Wiik, Tapio.

1976-12-01

A method of fabricating stable Josephson tunnel junctions with reproducible characteristics is described. The junctions have a sandwich structure consisting of a vacuum evaporated niobium film, a niobium oxide layer produced by the glow discharge method and a lead film deposited by vacuum evaporation. Difficulties in producing thin-film Josephson junctions are discussed. Experimental results suggest that the lower critical field of the niobium film is the most essential parameter when evaluating the quality of these junctions. The dependence of the lower critical field on the film thickness and on the Ginzburg-Landau parameter of the film is studied analytically. Comparison with the properties of the evaporated films and with the previous calculations for bulk specimens shows that the presented model is applicable for most of the prepared samples. (author)

Toward superconducting critical current by design

OpenAIRE

Sadovskyy, I. A.; Jia, Y.; Leroux, M.; Kwon, J.; Hu, H.; Fang, L.; Chaparro, C.; Zhu, S.; Welp, U.; Zuo, J. -M.; Zhang, Y.; Nakasaki, R.; Selvamanickam, V.; Crabtree, G. W.; Koshelev, A. E.

2015-01-01

We present the new paradigm of critical current by design. Analogous to materials by design, it aims at predicting the optimal defect landscape in a superconductor for targeted applications by elucidating the vortex dynamics responsible for the bulk critical current. To highlight this approach, we demonstrate the synergistic combination of critical current measurements on commercial high-temperature superconductors containing self-assembled and irradiation tailored correlated defects by using...

Toward Superconducting Critical Current by Design.

Science.gov (United States)

Sadovskyy, Ivan A; Jia, Ying; Leroux, Maxime; Kwon, Jihwan; Hu, Hefei; Fang, Lei; Chaparro, Carlos; Zhu, Shaofei; Welp, Ulrich; Zuo, Jian-Min; Zhang, Yifei; Nakasaki, Ryusuke; Selvamanickam, Venkat; Crabtree, George W; Koshelev, Alexei E; Glatz, Andreas; Kwok, Wai-Kwong

2016-06-01

A new critical-current-by-design paradigm is presented. It aims at predicting the optimal defect landscape in superconductors for targeted applications by elucidating the vortex dynamics responsible for the bulk critical current. To this end, critical current measurements on commercial high-temperature superconductors are combined with large-scale time-dependent Ginzburg-Landau simulations of vortex dynamics. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Fully Valley/spin polarized current and Fano factor through the Graphene/ferromagnetic silicene/Graphene junction

Energy Technology Data Exchange (ETDEWEB)

Rashidian, Zeinab; Rezaeipour, Saeid [Department of Physics, Faculty of Science, Lorestan University, Lorestan (Iran, Islamic Republic of); Hajati, Yaser [Department of Physics, Faculty of Science, Shahid Chamran University of Ahvaz, Ahvaz (Iran, Islamic Republic of); Lorestaniweiss, Zeinab, E-mail: rashidian1983z@gmail.com [Department of Physics, Faculty of Science, Lorestan University, Lorestan (Iran, Islamic Republic of); Ueda, Akiko [Faculty of Pure and Applied Sciences, University of Tsukuba, Tsukuba (Japan)

2017-02-15

In this work, we study the transport properties of Dirac fermions through the ferromagnetic silicene which is sandwiched between the Graphene leads (G/FS/G). Spin/valley conductance, spin/valley polarization, and also Fano factor are theoretically calculated using the Landauer-Buttiker formula. We find that the fully valley and spin polarized currents through the G/FS/G junction can be obtained by increasing the electric field strength and the length of ferromagnetic silicene region. Moreover, the valley polarization can be tuned from negative to positive values by changing the electric field. We find that the Fano factor also changes with the spin and valley polarization. Our findings of high controllability of the spin and valley transport in such a G/FS/G junction the potential of this junction for spin-valleytronics applications.

Magnetometry with Low-Resistance Proximity Josephson Junction

Science.gov (United States)

Jabdaraghi, R. N.; Peltonen, J. T.; Golubev, D. S.; Pekola, J. P.

2018-06-01

We characterize a niobium-based superconducting quantum interference proximity transistor (Nb-SQUIPT) and its key constituent formed by a Nb-Cu-Nb SNS weak link. The Nb-SQUIPT and SNS devices are fabricated simultaneously in two separate lithography and deposition steps, relying on Ar ion cleaning of the Nb contact surfaces. The quality of the Nb-Cu interface is characterized by measuring the temperature-dependent equilibrium critical supercurrent of the SNS junction. In the Nb-SQUIPT device, we observe a maximum flux-to-current transfer function value of about 55 nA/Φ_0 in the sub-gap regime of bias voltages. This results in suppression of power dissipation down to a few fW. Low-bias operation of the device with a relatively low probe junction resistance decreases the dissipation by up to two orders of magnitude compared to a conventional device based on an Al-Cu-Al SNS junction and an Al tunnel probe (Al-SQUIPT).

delta-biased Josephson tunnel junctions

DEFF Research Database (Denmark)

Monaco, R.; Mygind, Jesper; Koshelet, V.

2010-01-01

Abstract: The behavior of a long Josephson tunnel junction drastically depends on the distribution of the dc bias current. We investigate the case in which the bias current is fed in the central point of a one-dimensional junction. Such junction configuration has been recently used to detect...... the persistent currents circulating in a superconducting loop. Analytical and numerical results indicate that the presence of fractional vortices leads to remarkable differences from the conventional case of uniformly distributed dc bias current. The theoretical findings are supported by detailed measurements...

Nature of inhomogeneous states in superconducting junctions

International Nuclear Information System (INIS)

Ivlev, B.I.; Kopnin, N.B.

1982-01-01

A superconducting structure which arises in a superconducting film under a strong injection of a current through a tunnel junction is considered. If the current density in the film exceeds the critical Ginzburg-Landau value, an inhomogeneous resistive state with phase-slip centers can arise in it. This state is charcterized by the presence of regions with different chemical potentials of the Cooper pairs. These shifts of the pair chemical potential and the nonuniform structure of the order parameter may account for the so-called multigap states which have been observed experimentally

High critical current density YBCO films and fabrication of dc-SQUIDs

CERN Document Server

Kuriki, S; Kawaguchi, Y; Matsuda, M; Otowa, T

2002-01-01

In order to improve the sensitivity of SQUID magnetometers made of high-T sub c films, we have studied the conditions of pulsed-laser deposition of YBCO films. Among the different deposition parameters examined, extensive degassing of the vacuum chamber before and precise control of the substrate temperature during the film deposition were found effective for obtaining high critical temperature T sub c and high critical current density J sub c. It was also found that the residual-resistance ratio has a clear correlation with J sub c , indicating that it can be a good, and easy to measure, index of the film quality. Films having T sub c approx 89-90 K and J sub c >= 5x10 sup 6 A cm sup - sup 2 at 77 K were used to fabricate SQUIDs without a pickup loop. Grain-boundary junctions formed on bicrystal substrates with a 30 deg. misorientation angle exhibited I sub c R sub n values of more than 100 mu V at 77 K. The well-known scaling behaviour of the relation I sub c R sub n propor to (J sup G sup B sub c) sup 1 su...

Dependence of critical current on sample length analyzed by the variation of local critical current bent of BSCCO superconducting composite tape

International Nuclear Information System (INIS)

Matsubayashi, H.; Mukai, Y.; Shin, J.K.; Ochiai, S.; Okuda, H.; Osamura, K.; Otto, A.; Malozemoff, A.

2008-01-01

Using the high critical current type BSCCO composite tape fabricated at American Superconductor Corporation, the relation of overall critical current to the distribution of local critical current and the dependence of overall critical current on sample length of the bent samples were studied experimentally and analytically. The measured overall critical current was described well from the distribution of local critical current and n-value of the constituting short elements, by regarding the overall sample to be composed of local series circuits and applying the voltage summation model. Also the dependence of overall critical current on sample length could be reproduced in computer satisfactorily by the proposed simulation method

Asymmetric current-phase relation due to spin-orbit interaction in semiconductor nanowire Josephson junction

NARCIS (Netherlands)

Yokoyama, T.; Eto, M.; Nazarov, Y.V.

2012-01-01

We theoretically study the current-phase relation in semiconductor nanowire Josephson junction in the presence of spin-orbit interaction. In the nanowire, the impurity scattering with strong SO interaction is taken into account using the random matrix theory. In the absence of magnetic field, the

Influence of surface losses and the self-pumping effect on current-voltage characteristics of a long Josephson junction

DEFF Research Database (Denmark)

Pankratov, A.L.; Sobolev, A.S.; Koshelets, V.P.

2007-01-01

We have numerically investigated the dynamics of a long linear Josephson tunnel junction with overlap geometry. Biased by a direct current (dc) and an applied dc magnetic field, the junction has important applications as tunable high frequency oscillator [flux-flow oscillator (FFO......) placed at both ends of the FFO. In our model, the damping parameter depends both on the spatial coordinate and on the amplitude of the ac voltage. In order to find the dc current-voltage curves, the damping parameter has to be calculated self-consistently by successive approximations and time integration...

Quantum spin circulator in Y junctions of Heisenberg chains

Science.gov (United States)

Buccheri, Francesco; Egger, Reinhold; Pereira, Rodrigo G.; Ramos, Flávia B.

2018-06-01

We show that a quantum spin circulator, a nonreciprocal device that routes spin currents without any charge transport, can be achieved in Y junctions of identical spin-1 /2 Heisenberg chains coupled by a chiral three-spin interaction. Using bosonization, boundary conformal field theory, and density matrix renormalization group simulations, we find that a chiral fixed point with maximally asymmetric spin conductance arises at a critical point separating a regime of disconnected chains from a spin-only version of the three-channel Kondo effect. We argue that networks of spin-chain Y junctions provide a controllable approach to construct long-sought chiral spin-liquid phases.

Phase Sensitive Measurements of Ferromagnetic Josephson Junctions for Cryogenic Memory Applications

Science.gov (United States)

Niedzielski, Bethany Maria

complicated system, first, studies of junctions with only a single ferromagnetic junction were required to determine the 0-pi transition thickness of that material, the decay of the critical current through the junction with thickness, and the switching field of the material. The materials studied included NiFeMo, NiFe, Ni, and NiFeCo. Additionally, roughness studies of several different superconducting base electrodes and normal metal buffer and spacer layers were performed to determine the optimum junction layers. The ferromagnetic layers used were on the order of 1-2 nm thick, so a smooth growth template is imperative to maintain continuous films with in-plane magnetizations. Lastly, single junction spin-valve samples were studied. We are not equipped to measure the phase of a single junction, but series of samples where one ferromagnetic layer is systematically varied in thickness can inform the proper thicknesses needed for 0-pi switching based on relative critical current values between the parallel and antiparallel magnetic configurations. Utilizing this background information, two spin-valve samples were incorporated in a superconducting loop so that the relative phase of the two junctions could be investigated. Through this process, the first phase-controllable ferromagnetic Josephson junctions were experimentally demonstrated using phase-sensitive measurement techniques. This provided the proof of concept for the Josephson Magnetic Random Access Memory (JMRAM), a superconducting memory system in development at Northrop Grumman, with whom we collaborate on this work. Phase-controllable systems were successfully demonstrated using two different magnetic material stacks and verified with several analysis techniques.

Unconventional transport characteristics of p-wave superconducting junctions in Sr2RuO4-Ru eutectic system

International Nuclear Information System (INIS)

Kambara, H.; Kashiwaya, S.; Yaguchi, H.; Asano, Y.; Tanaka, Y.; Maeno, Y.

2010-01-01

We report on novel local transport characteristics of naturally formed p-wave superconducting junctions of Sr 2 RuO 4 -Ru eutectic system by using microfabrication technique. We observed quite anomalous voltage-current (differential resistance-current) characteristics for both I//ab and I//c directions, which are not seen in conventional Josephson junctions. The anomalous features suggest the internal degrees of freedom of the superconducting state, possibly due to chiral p-wave domain. The dc current acts as a driving force to move chiral p-wave domain walls and form larger critical current path to cause the anomalous hysteresis.

The 0 and pi contact array model of bicrystal junctions and interferometers

DEFF Research Database (Denmark)

Kornev, Victor K.; Soloviev, Igor I.; Klenov, Nikolai V.

2003-01-01

The array model of the faceted bicrystal Josephson junctions has been developed more comprehensively. The facet size and the facet critical current dependence on. magnetic field are taken in to consideration. The model can be successfully used with high-performance software meant for numerical si...

Increasing gap junctional coupling: a tool for dissecting the role of gap junctions

DEFF Research Database (Denmark)

Axelsen, Lene Nygaard; Haugan, Ketil; Stahlhut, Martin

2007-01-01

Much of our current knowledge about the physiological and pathophysiological role of gap junctions is based on experiments where coupling has been reduced by either chemical agents or genetic modification. This has brought evidence that gap junctions are important in many physiological processes....... In a number of cases, gap junctions have been implicated in the initiation and progress of disease, and experimental uncoupling has been used to investigate the exact role of coupling. The inverse approach, i.e., to increase coupling, has become possible in recent years and represents a new way of testing...... the role of gap junctions. The aim of this review is to summarize the current knowledge obtained with agents that selectively increase gap junctional intercellular coupling. Two approaches will be reviewed: increasing coupling by the use of antiarrhythmic peptide and its synthetic analogs...

Transcranial direct current stimulation of the right temporoparietal junction impairs third-person perspective taking

NARCIS (Netherlands)

van Elk, M.; Duizer, M.; Sligte, I.; van Schie, H.

Given the current debates about the precise functional role of the right temporoparietal junction (rTPJ) in egocentric and exocentric perspective taking, in the present study we manipulated activity in the rTPJ to investigate the effects on a spatial perspective-taking task. Participants engaged in

Current relevance of cervical ultrasonography in staging cancer of the esophagus and gastroesophageal junction

NARCIS (Netherlands)

Schreurs, Liesbeth; Verhoef, C.C.; van der Jagt, E.J.; van Dam, G.M.; Groen, H.; Plukker, J.T.

Purpose: To evaluate the value of external ultrasonography (US) of the neck in current dedicated preoperative staging of patients with cancer of the esophagus and gastroesophageal junction (GEJ). Materials and methods: We analyzed 180 consecutive patients (154 men, 26 women, and mean age 63 (38-84)

Realization of φ Josephson junctions with a ferromagnetic interlayer

International Nuclear Information System (INIS)

Sickinger, Hanna Sabine

2014-01-01

In this thesis, φ Josephson junctions based on 0-π junctions with a ferromagnetic interlayer are studied. Josephson junctions (JJs) with a ferromagnetic interlayer can have a phase drop of 0 or π in the ground state, depending on the thickness of the ferromagnet (0 JJs or π JJs). Also, 0-π JJs can be realized, where one segment of the junction (if taken separately) is in the 0 state, while the other segment is in the π state. One can use these π Josephson junctions as a device in superconducting circuits, where it provides a constant phase shift, i.e., it acts as a π phase battery. A generalization of a π JJ is a φ JJ, which has the phase ±φ in the ground state. The value of φ can be chosen by design and tuned in the interval 0<φ<π. The φ JJs used in this experiment were fabricated as 0-π JJs with asymmetric current densities in the 0 and π facets. This system can be described by an effective current-phase relation which is tunable by an externally applied magnetic field. The first experimental evidence of such a φ JJ is presented in this thesis. In particular it is demonstrated that (a) a φ JJ has two ground states +φ and -φ, (b) the unknown state can be detected (read out) by measuring the critical current I c (I c+ or I c- ), and (c) a particular state can be prepared by applying a magnetic field or a special bias sweep sequence. These properties of a φ JJ can be utilized, for example, as a memory cell (classical bit). Furthermore, a φ Josephson junction can be used as a deterministic ratchet. This is due to the tunable asymmetry of the potential that can be changed by the external magnetic field. Rectification curves are observed for the overdamped and the underdamped case. Moreover, experimental data of the retrapping process of the phase of a φ Josephson junction depending on the temperature is presented.

Proximity effects and Josephson currents in ferromagnet. Spin-triplet superconductors junctions

International Nuclear Information System (INIS)

Terrade, Damien

2015-01-01

Spin-triplet superconductivity, first attached to the description of 3 He, is now generally considered to also occur in heavy-fermions compounds and in perovskite ruthenium oxide Sr 2 RuO 4 . The latter material is especially interesting since many experiments show strong evidences for a unitary chiral spin-triplet state. Moreover, the recent fabrication of thin heterostructures made of ferromagnetic SrRuO 3 on the top of Sr 2 RuO 4 strongly encourages new theoretical studies on the interplay between spin-triplet superconductor and ferromagnet in similar fashion to spin-singlet superconductors. Using an extended tight-binding Hamiltonian to model the superconductor, we discuss in this thesis the specific proximity effects of such interface by solving self-consistently the Bogoliubov-De Gennes equations on two- and three-dimensional lattices in the ballistic limit. We obtain the spatial profile of the superconducting order parameters at the interface as well as the spin-polarisation and the current across the Josephson junctions. In contrast to heterostructures made of spin-singlet superconductor, we show that the physical properties at the interface are not only controlled by the strength of the magnetization inside the ferromagnet but also by its orientation due to the existence of a finite pair spin projection of the spin-triplet Cooper pairs. We analyse in the first part the spin-polarisation and the Gibbs free energy at the three-dimensional ferromagnet-chiral spin-triplet superconductor interface. Then, the second part of the thesis is dedicated to the study of the Josephson junctions made of a chiral spin-triplet superconductor and a ferromagnetic barrier. More precisely, we analyse the existence of 0-π state transitions in two- and three-dimensional junctions with respect to the strength and the orientation of the magnetization. Finally, we study the proximity effects at the interface of helical spin-triplet superconductors. They differ from the chiral

Development of NbN Josephson junctions with TaxN semi-metal barrier; application to RSFQ circuits

International Nuclear Information System (INIS)

Setzu, R.

2007-11-01

This thesis research, brought to the development and optimization of SNS (Superconductor / Normal Metal / Superconductor) Josephson junctions with NbN electrodes and a high resistivity Ta x N barrier. We were able to point out Josephson oscillations for frequencies above 1 THz and operation temperatures up to 10 K, which constituted the original goal of the project. This property makes these junctions unique and well adapted for realizing ultra-fast RSFQ (Rapid Single Flux Quantum) logic circuits suitable for spatial telecommunications. We showed a good reproducibility of Ta x N film properties as a function of the sputtering parameters. The NbN/Ta x N/NbN tri-layers exhibit high critical temperature (16 K). The junctions showed a clear dependence of the R n I c product as a function of the partial nitrogen pressure inside the reactive plasma; the R n I c is the product between the junction critical current and its normal resistance, and indicates the upper limit Josephson frequency. We have also obtained some really high R n I c products, up to 3.74 mV at 4.2 K for critical current densities of about 15 kA/cm 2 . Junctions show the expected Josephson behaviors, respectively Fraunhofer diffraction and Shapiro steps. up to 14 K. This allows expecting good circuit operations in a relaxed cryogenics environment (with respect to the niobium circuits limited at 4.2 K). The junctions appear to be self-shunted. The SNOP junctions J c -temperature dependence has been fitted by using the long SNS junction model in the dirty limit, which gives a normal metal coherence length of about 3.8 nm at 4.2 K. We have finally studied a multilayer fabrication process, including a common ground plane and bias resistors, suitable for RSFQ logic basic circuits. To conclude we have been able to show the performance superiority of NbN/Ta x N/NbN junctions over the actual niobium junctions, as well as their interest for realizing compact RSFQ logic circuits. In fact these junctions do not

Fabrication of sandwich-type MgB{sub 2}/Boron/MgB{sub 2} Josephson junctions with rapid annealing method

Energy Technology Data Exchange (ETDEWEB)

Zhang, Song; Wang, Xu; Ma, Junli; Cui, Ruirui; Deng, Chaoyong, E-mail: cydeng@gzu.edu.cn

2015-11-15

Sandwich-type MgB{sub 2}/Boron/MgB{sub 2} Josephson junctions were fabricated using magnetron sputtering system. The rapid-anneal process was adopted to replace traditional way of annealing, trying to solve the problem of interdiffusion and oxidation with multilayer films. The boron film was used as barrier layer to avoid the introduction of impurities and improve reproducibility of the junctions. The bottom MgB{sub 2} thin films deposited on c-plane sapphire substrate exhibits a critical temperature T{sub C} of 37.5 K and critical current density J{sub C} at 5 K of 8.7 × 10{sup 6} A cm{sup −2}. From the XRD pattern, the bottom MgB{sub 2} thin film shows c-axis orientation, whereas the top MgB{sub 2} became polycrystalline as Boron barrier layer grown thicker. Therefore, all junction samples show lower T{sub C} than single MgB{sub 2} thin film. The junctions exhibit excellent quasiparticle characteristics with ideal dependence on temperature and Boron barrier thickness. Subharmonic gap structure was appeared in conductance characteristics, which was attributed to the multiple Andreev reflections (MAR). The result demonstrates great promise of this new fabrication technology for MgB{sub 2} Josephson junction fabrication. - Highlights: • Sandwich-type MgB{sub 2}/Boron/MgB{sub 2} Josephson junctions were fabricated. • The junctions were annealed after deposition with the rapid-anneal process. • The highest critical current is 25.3 mA at 5 K and remains non-zero near 25 K. • Subharmonic gap features can be observed in the dI/dV – V curves.

Fluxon dynamics in long Josephson junctions in the presence of a temperature gradient or spatial nonuniformity

DEFF Research Database (Denmark)

Krasnov, V.M.; Oboznov, V.A.; Pedersen, Niels Falsig

1997-01-01

Fluxon dynamics in nonuniform Josephson junctions was studied both experimentally and theoretically. Two types of nonuniform junctions were considered: the first type had a nonuniform spatial distribution of critical and bias currents and the second had a temperature gradient applied along...... the junction. An analytical expression for the I-V curve in the presence of a temperature gradient or spatial nonuniformity was derived. It was shown that there is no static thermomagnetic Nernst effect due to Josephson fluxon motion despite the existence of a force pushing fluxons in the direction of smaller...

Performance of single-junction and dual-junction InGaP/GaAs solar cells under low concentration ratios

International Nuclear Information System (INIS)

Khan, Aurangzeb; Yamaguchi, Masafumi; Takamoto, Tatsuya

2004-01-01

A study of the performance of single-junction InGaP/GaAs and dual-junction InGaP/GaAs tandem cells under low concentration ratios (up to 15 suns), before and after 1 MeV electron irradiation is presented. Analysis of the tunnel junction parameters under different concentrated light illuminations reveals that the peak current (J P ) and valley current (J V ) densities should be greater than the short-circuit current density (J sc ) for better performance. The tunnel junction behavior against light intensity improved after irradiation. This led to the suggestion that the peak current density (J P ) and valley current density (J V ) of the tunnel junction were enhanced after irradiation or the peak current was shifted to higher concentration. The recovery of the radiation damage under concentrated light illumination conditions suggests that the performance of the InGaP/GaAs tandem solar cell can be enhanced even under low concentration ratios

Critical currents in columnar vanadium films

International Nuclear Information System (INIS)

Cherkasova, V.G.; Kolin'ko, A.E.; Slatin, A.E.; Fogel, N.Y.

1982-01-01

The angular dependence of the critical current I/sub c/ is studied in columnar vanadium films. In measurements in constant magnetic fields an anomalous maximum I/sub c/ is found on the I/sub c/(theta) curves at arbitrary values of the external magnetic field and temperature, when the magnetic field is perpendicular to the plane of the specimen. The angular dependence of I/sub c/ measured in constant reduced magnetic fields h = H/H/sub c/2(T,theta) shows no singularities in the vicinity of the angle at which the I/sub c/ peak is found in the case H = const, i.e., the critical current is isotropic. This implies that a change in the relative orientation of the vortices and column boundaries produces no change in critical current. The experimental data obtained permit the conclusion that the anisotropy of I/sub c/ observed in a constant magnetic field H is merely a consequence of the anisotropy of the critical magnetic field H/sub c/: the critical current ''tracking'' the magnitude and angular dependence of H/sub c/

Response to ``Comment on `Small field behavior of critical current in Y1Ba2Cu3O7 sintered samples' ''

Science.gov (United States)

Paternò, G.; Alvani, C.; Casadio, S.; Gambardella, U.; Maritato, L.

1989-05-01

In our response we would like to point out the fitting of the data has done to account for the shift of the maximum magnetic field dependence of the critical current. This shift on the order of 1 Gauss or less is gener ally observed in all our data and is attributable to the residual external field. Since we used a crude junction model, the self-field effects were not included. (AIP)

The nonideality coefficient of current-voltage characteristics for p-n junctions in a high ultrahigh-frequency (microwave) field

International Nuclear Information System (INIS)

Shamirzaev, S. H.; Gulyamov, G.; Dadamirzaev, M. G.; Gulyamov, A. G.

2009-01-01

The effect of heating of electrons and holes on the nonideality coefficient of the current-voltage characteristic for a p-n junction in a high microwave field is studied. It is established that the nonideality coefficient for a diode depends on the type of charge carriers that make the major contribution to the current in the p-n junction. It is shown that, in some cases in silicon samples, the nonideality coefficient for the diode is governed by the temperature for holes in spite of the fact that the temperature for electrons is higher than the temperature for holes.

Method for critical current testing

International Nuclear Information System (INIS)

Siddall, M.B.; Smathers, D.B.

1989-01-01

Superconducting critical current testing software was developed with four important features not feasible with analog test equipment. First, quasi-steady-state sample current conditions are achieved by incrementing sample current, followed by holding some milliseconds until the transient voltage decays before voltage sampling. Then the self-field correction from a helically wound sample is computed and subtracted from each sampled field reading. A copper wire inductively wound shunt which is used for quench protection has a constant measured resistance from which the shunt leakage current is computed and subtracted from the sample current by measuring the shunt voltage after each sample current reading. Finally, the critical current is recomputed from a least squares curve fit to the power law: E=A*In when the correlation coefficient for the fit is high enough to ensure a better result than the raw datum. Comparison with NBS Standard Reference Material (NbTi) and current round robin Nb/sub 3/Sn testing is examined

Valley dependent transport in graphene L junction

Science.gov (United States)

Chan, K. S.

2018-05-01

We studied the valley dependent transport in graphene L junctions connecting an armchair lead and a zigzag lead. The junction can be used in valleytronic devices and circuits. Electrons injected from the armchair lead into the junction is not valley polarized, but they can become valley polarized in the zigzag lead. There are Fermi energies, where the current in the zigzag lead is highly valley polarized and the junction is an efficient generator of valley polarized current. The features of the valley polarized current depend sensitively on the widths of the two leads, as well as the number of dimers in the armchair lead, because this number has a sensitive effect on the band structure of the armchair lead. When an external potential is applied to the junction, the energy range with high valley polarization is enlarged enhancing its function as a generator of highly valley polarized current. The scaling behavior found in other graphene devices is also found in L junctions, which means that the results presented here can be extended to junctions with larger dimensions after appropriate scaling of the energy.

Josephson junction arrays

International Nuclear Information System (INIS)

Bindslev Hansen, J.; Lindelof, P.E.

1985-01-01

In this review we intend to cover recent work involving arrays of Josephson junctions. The work on such arrays falls naturally into three main areas of interest: 1. Technical applications of Josephson junction arrays for high-frequency devices. 2. Experimental studies of 2-D model systems (Kosterlitz-Thouless phase transition, commensurate-incommensurate transition in frustrated (flux) lattices). 3. Investigations of phenomena associated with non-equilibrium superconductivity in and around Josephson junctions (with high current density). (orig./BUD)

Analysis of strain distribution and critical current of superconductors based on a strain-critical current measurement system

International Nuclear Information System (INIS)

Liu Fang; Wu Yu; Long Feng

2010-01-01

Based on Pacman device which is widely used to investigate the axial strain dependence of the critical current in superconductors, the finite element analysis method is employed to carry out the force analysis of the spring and the superconducting strand, thereby the axial and lateral strain distributions of the superconducting strand are obtained. According to the two extreme assumptions(low inter-filament resistance and high inter-filament resistance), the effects of the strain homogeneity at the cross section of the superconductor on the critical current is analyzed combined with the Nb 3 Sn deviatoric strain-critical current scaling law. (authors)

The investigation of the phase-locking stability in linear arrays of Josephson junctions and arrays closed into a superconducting loop

International Nuclear Information System (INIS)

Darula, M.; Seidel, P.; Misanik, B.; Busse, F.; Heinz, E.; Benacka, S.

1994-01-01

The phase-locking stability is investigated theoretically in two structures: linear arrays of Josephson junctions shunted by resistive load and arrays closed into superconducting loop. In both cases the quasi-identical junctions are supposed to be in arrays. The stability as a function of spread in Josephson junction parameters as well as a function of other circuit parameters is investigated. Using Floquet theory it is shown that spread in critical currents of Josephson junction limit the stability of phase-locking state. From the simulations it follows that the phase-locking in arrays closed into superconducting loop is more stable against the spread in junction parameters than in the case of linear array of Josephson junctions. (orig.)

Current-voltage characteristics of single-molecule diarylethene junctions measured with adjustable gold electrodes in solution.

Science.gov (United States)

Briechle, Bernd M; Kim, Youngsang; Ehrenreich, Philipp; Erbe, Artur; Sysoiev, Dmytro; Huhn, Thomas; Groth, Ulrich; Scheer, Elke

2012-01-01

We report on an experimental analysis of the charge transport through sulfur-free photochromic molecular junctions. The conductance of individual molecules contacted with gold electrodes and the current-voltage characteristics of these junctions are measured in a mechanically controlled break-junction system at room temperature and in liquid environment. We compare the transport properties of a series of molecules, labeled TSC, MN, and 4Py, with the same switching core but varying side-arms and end-groups designed for providing the mechanical and electrical contact to the gold electrodes. We perform a detailed analysis of the transport properties of TSC in its open and closed states. We find rather broad distributions of conductance values in both states. The analysis, based on the assumption that the current is carried by a single dominating molecular orbital, reveals distinct differences between both states. We discuss the appearance of diode-like behavior for the particular species 4Py that features end-groups, which preferentially couple to the metal electrode by physisorption. We show that the energetic position of the molecular orbital varies as a function of the transmission. Finally, we show for the species MN that the use of two cyano end-groups on each side considerably enhances the coupling strength compared to the typical behavior of a single cyano group.

NbN-AlN-NbN Josephson junctions on different substrates

Energy Technology Data Exchange (ETDEWEB)

Merker, Michael; Bohn, Christian; Voellinger, Marvin; Ilin, Konstantin; Siegel, Michael [KIT, Karlsruhe (Germany)

2016-07-01

Josephson junction technology is important for the realization of high quality cryogenic devices such as SQUIDs, RSFQ or SIS-mixers. The material system based on NbN/AlN/NbN tri-layer has gained a lot of interest, because it offers higher gap voltages and critical current densities compared to the well-established Nb/Al-AlOx/Nb technology. However, the realization of high quality Josephson junctions is more challenging. We developed a technology of Josephson junctions on a variety of substrates such as Silicon, Sapphire and Magnesium oxide and compared the quality parameters of these junctions at 4.2 K. The gap voltages achieved a range from 4 mV (for the junctions on Si) to 5.8 mV (in case of MgO substrates) which is considerably higher than those obtained from Nb based Josephson junctions. Another key parameter is the ratio of the subgap resistance to the normal state resistance. This so-called subgap ratio corresponds to the losses in a Josephson junction which have to be minimized. So far, subgap ratios of 26 have been achieved. Further careful optimization of the deposition conditions is required to maximize this ratio, The details of the optimization of technology and of characterization of NbN/AlN/NbN junctions will be presented and discussed.

Spatiotemporal chaos in rf-driven Josephson junction series arrays

International Nuclear Information System (INIS)

Dominguez, D.; Cerdeira, H.A.

1995-01-01

We study underdamped Josephson junction series arrays that are globally coupled through a resistive shunting load and driven by an rf bias current. They can be an experimental realization of many phenomena currently studied in globally coupled logistic maps. We study their spatiotemporal dynamics and we find coherent, ordered, partially ordered, turbulent, and quasiperiodic phases. The ordered phase corresponds to giant Shapiro steps in the IV characteristics. In the turbulent phase there is a saturation of the broad-band noise for a large number of junctions. This corresponds to a breakdown of the law of large numbers as seen in globally coupled maps. Coexisting with this phenomenon, we find an emergence of pseudosteps in the IV characteristics. This effect can be experimentally distinguished from the true Shapiro steps, which do not have broad-band noise emission. We study the stability of the breakdown of the law of large numbers against thermal fluctuations. We find that it is stable below a critical temperature T c1 . A measurement of the broad-band noise as a function of temperature T will show three different regimes: below T c1 the broad-band noise decreases when increasing T, and there is turbulence and the breakdown of the law of large numbers. Between T c1 and a second critical temperature T c2 the broad-band noise is constant and the dynamics is dominated by the chaos of the individual junctions. Finally above T c2 all the broad-band noise is due to thermal fluctuations, since it increases linearly with T

Bi-epitaxial tilted out-of-plane YBCO junctions on NdGaO{sub 3} substrates with YSZ seeding layer

Energy Technology Data Exchange (ETDEWEB)

Mozhaev, P.B. (Institute of Physics and Technology RAS, Moscow (Russian Federation)); Mozhaev, J.E.; Bindslev Hansen, J.; Jacobsen, C.S. (Technical Univ. of Denmark, Dept. of Physics, Kgs. Lyngby (Denmark)); Kotelyanskil, I.M.; Luzanov, V.A. (Institute of Radio Engineering and Electronics RAS, Moscow (Russian Federation)); Benacka, S.; Strbik, V. (Institute of Electrical Engineering SAS, Bratislava (SK))

2008-10-15

Bi-epitaxial junctions with out-of plane tilt of the c axis were fabricated of YBCO superconducting thin films on NdGaO{sub 3} substrates with different miscut angles. Bi-epitaxial growth was provided by implementation of an Y:ZrO{sub 2} seeding layer on a certain part of the substrate. Junctions with different orientation of the bi-epitaxial boundaries were fabricated, their DC electrical properties were studied as a function of the boundary orientation angle. The junctions showed extremely high critical current densities for all tested miscut angles and bi-epitaxial boundary orientations (about 105 A/cm2 at 77 K and up to 106 A/cm2 at 4.2 K). The dependence of critical current density on the bi-epitaxial boundary orientation angle may be explained as an effect of a d-wave pairing mechanism in the HTSC with the simple Sigrist-Rice model. The studied boundaries may be considered as model structures for the grain boundaries in the coated conductors. (au)

Critical currents and weak links in melt textured R123

International Nuclear Information System (INIS)

Veal, B. W.; Zhang, H.; Claus, H.; Chen, L.; Paulikas, A. P.; Koshelev, A.; Crabtree, G. W.

2000-01-01

Weak link behavior is studied, using magnetization and Hall probe measurements of ring samples, in welded melt-textured R123 monoliths and in dual-seeded samples with disoriented domains. Techniques for welding samples yield transport currents across the junction that are in excess of 10 4 A/cm 2

Analogue Between Dynamic Hamiltonian-Operators of a Mesoscopic Ring Carrying Persistent Current and a Josephson Junction

International Nuclear Information System (INIS)

Fan Hongyi; Wang Jisuo

2006-01-01

By making the analogy between the operator Hamiltonians of a mesoscopic ring carrying the persistent current and a Josephson junction we have introduced a phase operator and entangled state representation to establish a theoretical formalism for the ring system.

On simulation of local fluxes in molecular junctions

Science.gov (United States)

Cabra, Gabriel; Jensen, Anders; Galperin, Michael

2018-05-01

We present a pedagogical review of the current density simulation in molecular junction models indicating its advantages and deficiencies in analysis of local junction transport characteristics. In particular, we argue that current density is a universal tool which provides more information than traditionally simulated bond currents, especially when discussing inelastic processes. However, current density simulations are sensitive to the choice of basis and electronic structure method. We note that while discussing the local current conservation in junctions, one has to account for the source term caused by the open character of the system and intra-molecular interactions. Our considerations are illustrated with numerical simulations of a benzenedithiol molecular junction.

Improved impedance transformation between microwave oscillator and Josephson junction series array

International Nuclear Information System (INIS)

Gutmann, P.; Vollmer, E.; Niemeyer, J.

1993-01-01

Superconducting microwave monolithic integrated circuits (S-MMIC), based on Josephson tunnel junctions, are a well-established tool to reproduce the volt at the highest level of accuracy. An external oscillator of a fixed frequency f supplies microwave energy through a waveguide to the S-MMIC. The wave changes its mode at a waveguide-antipodal finline-stripline taper before entering a series array stripline of up to 30 000 Josephson tunnel junctions and is dissipated as heat in a lossy stripline. Both striplines have a characteristic impedance Z of 2 to 5 Ω. An equivalent circuit is shown in figure 1. The oscillator is matched to the waveguide with a source resistance R G Z(waveguide) ∼ 550 Ω. The most critical part is the taper, which should work as a lossless impedance matching network at the frequency of the oscillator. Microwave energy is fed into the tunnel junctions by the surface current I HF of the travelling wave in the series array stripline producing an rf voltage amplitude U JHF across the capacitance C of each junction. The Josephson tunnel junctions work as self-oscillating parametric mixers producing steps of constant voltage V in the current-voltage characteristic whenever (nf - 2eV/h) = 0, with n denoting an integer and e and h denoting the elementary charge and Planck's constant, respectively. The equivalent circuit of a Josephson tunnel element used in a voltage standard for 1 V working at a frequency of f = 70 GHz is given by a lumped parallel resonant circuit with a nonlinear inductance on the order of L = φ 0 /2πI 0 ∼ 1 pH, flux quantum φ 0 = h/2e and a linear capacitance of C ∼ 40 pF. These tunnel junctions have a maximum zero voltage current of approximately I 0 ∼ 350 μA. (orig.)

Statistical analysis of the distribution of critical current and the correlation of n value to the critical current of bent Bi2223 composite tape

International Nuclear Information System (INIS)

Ochiai, S; Matsubayashi, H; Okuda, H; Osamura, K; Otto, A; Malozemoff, A

2009-01-01

Distributions of local and overall critical currents and correlation of n value to the critical current of bent Bi2223 composite tape were studied from the statistical viewpoint. The data of the local and overall transport critical currents and n values of the Bi2223 composite tape specimens were collected experimentally for a wide range of bending strain (0-1.1%) by using the specimens, designed so as to characterize the local and overall critical currents and n values. The measured local and overall critical currents were analyzed with various types of Weibull distribution function. Which of the Weibull distribution functions is suitable for the description of the distribution of local and overall critical currents at each bending strain, and also how much the Weibull parameter values characterizing the distribution vary with bending strain, were revealed. Then we attempted to reproduce the overall critical current distribution and correlation of the overall n value to the overall critical current from the distribution of local critical currents and the correlation of the local n value to the local critical current by a Monte Carlo simulation. The measured average values of critical current and n value at each bending strain and the correlation of n value to critical current were reproduced well by the present simulation, while the distribution of critical current values was reproduced fairly well but not fully. The reason for this is discussed.

IR Camera Validation of IGBT Junction Temperature Measurement via Peak Gate Current

DEFF Research Database (Denmark)

Baker, Nick; Dupont, Laurent; Munk-Nielsen, Stig

2017-01-01

partial bond-wire lift-off. Results are also compared with a traditional electrical temperature measurement method: the voltage drop under low current (VCE(low)). In all cases, the IGPeak method is found to provide a temperature slightly overestimating the temperature of the gate pad. Consequently, both...... the gate pad position and chip temperature distribution influence whether the measurement is representative of the mean junction temperature. These results remain consistent after chips are degraded through bondwire lift-off. In a paralleled IGBT configuration with non-negligible temperature disequilibrium...

Scattering theory of superconductive tunneling in quantum junctions

International Nuclear Information System (INIS)

Shumeiko, V.S.; Bratus', E.N.

1997-01-01

A consistent theory of superconductive tunneling in single-mode junctions within a scattering formulation of Bogolyubov-de Gennes quantum mechanics is presented. The dc Josephson effect and dc quasiparticle transport in the voltage-biased junctions are considered. Elastic quasiparticle scattering by the junction determines the equilibrium Josephson current. The origin of Andreev bound states in tunnel junctions and their role in equilibrium Josephson transport are discussed. In contrast, quasiparticle tunneling in voltage-biased junctions is determined by inelastic scattering. A general expression for inelastic scattering amplitudes is derived and the quasiparticle current is calculated at all voltages with emphasis on a discussion of the properties of sub gap tunnel current and the nature of subharmonic gap structure

Observation of weak coupling effects in Ba0.6 K0.4 Fe2 As2 junctions patterned across a naturally formed grain boundary

International Nuclear Information System (INIS)

Hong, Sung-Hak; Lee, Soon-Gul; Lee, Nam Hoon; Kang, Won Nam

2014-01-01

We have fabricated intergrain nanobridge junctions from a Ba 0.6 K 0.4 Fe 2 As 2 film and observed their weak coupling effects. We prepared the junction by patterning a nanobridge across a natural grain boundary by using a focused ion beam etching technique and studied their superconducting transition properties. The resistive transition showed three steps: the transitions of the bulk, the microbridge, and the junction grain boundary. Current–voltage curves showed typical Josephson junction characteristics, well-matched with the model of a resistively shunted junction incorporated with thermal fluctuations. Fitting data to theory revealed much larger current fluctuations than expected from the Johnson–Nyquist theorem. The junction showed a linear temperature dependence of the critical current and a constant normal-state resistance, indicating that the grain boundary played a role as a tunnel barrier with a very poor conductance. (paper)

Defining the value of injection current and effective electrical contact area for EGaIn-based molecular tunneling junctions.

Science.gov (United States)

Simeone, Felice C; Yoon, Hyo Jae; Thuo, Martin M; Barber, Jabulani R; Smith, Barbara; Whitesides, George M

2013-12-04

Analysis of rates of tunneling across self-assembled monolayers (SAMs) of n-alkanethiolates SCn (with n = number of carbon atoms) incorporated in junctions having structure Ag(TS)-SAM//Ga2O3/EGaIn leads to a value for the injection tunnel current density J0 (i.e., the current flowing through an ideal junction with n = 0) of 10(3.6±0.3) A·cm(-2) (V = +0.5 V). This estimation of J0 does not involve an extrapolation in length, because it was possible to measure current densities across SAMs over the range of lengths n = 1-18. This value of J0 is estimated under the assumption that values of the geometrical contact area equal the values of the effective electrical contact area. Detailed experimental analysis, however, indicates that the roughness of the Ga2O3 layer, and that of the Ag(TS)-SAM, determine values of the effective electrical contact area that are ~10(-4) the corresponding values of the geometrical contact area. Conversion of the values of geometrical contact area into the corresponding values of effective electrical contact area results in J0(+0.5 V) = 10(7.6±0.8) A·cm(-2), which is compatible with values reported for junctions using top-electrodes of evaporated Au, and graphene, and also comparable with values of J0 estimated from tunneling through single molecules. For these EGaIn-based junctions, the value of the tunneling decay factor β (β = 0.75 ± 0.02 Å(-1); β = 0.92 ± 0.02 nC(-1)) falls within the consensus range across different types of junctions (β = 0.73-0.89 Å(-1); β = 0.9-1.1 nC(-1)). A comparison of the characteristics of conical Ga2O3/EGaIn tips with the characteristics of other top-electrodes suggests that the EGaIn-based electrodes provide a particularly attractive technology for physical-organic studies of charge transport across SAMs.

Single molecule dynamics at a mechanically controllable break junction in solution at room temperature.

Science.gov (United States)

Konishi, Tatsuya; Kiguchi, Manabu; Takase, Mai; Nagasawa, Fumika; Nabika, Hideki; Ikeda, Katsuyoshi; Uosaki, Kohei; Ueno, Kosei; Misawa, Hiroaki; Murakoshi, Kei

2013-01-23

The in situ observation of geometrical and electronic structural dynamics of a single molecule junction is critically important in order to further progress in molecular electronics. Observations of single molecular junctions are difficult, however, because of sensitivity limits. Here, we report surface-enhanced Raman scattering (SERS) of a single 4,4'-bipyridine molecule under conditions of in situ current flow in a nanogap, by using nano-fabricated, mechanically controllable break junction (MCBJ) electrodes. When adsorbed at room temperature on metal nanoelectrodes in solution to form a single molecule junction, statistical analysis showed that nontotally symmetric b(1) and b(2) modes of 4,4'-bipyridine were strongly enhanced relative to observations of the same modes in solid or aqueous solutions. Significant changes in SERS intensity, energy (wavenumber), and selectivity of Raman vibrational bands that are coincident with current fluctuations provide information on distinct states of electronic and geometrical structure of the single molecule junction, even under large thermal fluctuations occurring at room temperature. We observed the dynamics of 4,4'-bipyridine motion between vertical and tilting configurations in the Au nanogap via b(1) and b(2) mode switching. A slight increase in the tilting angle of the molecule was also observed by noting the increase in the energies of Raman modes and the decrease in conductance of the molecular junction.

Shunted-Josephson-junction model. I. The autonomous case

DEFF Research Database (Denmark)

Belykh, V. N.; Pedersen, Niels Falsig; Sørensen, O. H.

1977-01-01

The shunted-Josephson-junction model: the parallel combination of a capacitance, a phase-dependent conductance, and an ideal junction element biased by a constant current, is discussed for arbitrary values of the junction parameters. The main objective is to provide a qualitative understanding...... current-voltage curves are presented. The case with a time-dependent monochromatic bias current is treated in a similar fashion in the companion paper....

Method for measuring the resistive transition and critical current in superconductors using pulsed current

International Nuclear Information System (INIS)

McGinnis, W.C.; Jones, T.E.

1993-01-01

A method is described for measuring the intragranular critical current of a granular superconductive material, comprising the steps of: conducting a substantially rectangular electronic pulse through said material so as to conduct a current through said material such that when said intragranular critical current of said material is exceeded, any grains present in said material are in a superconducting state when said current is less than said intragranular critical current, said material having a critical temperature; measuring said current through said material while conducting said pulse; measuring a voltage difference across said material while conducting said pulse; and determining said intragranular critical current through said material by varying said current to discern a current level at which an electrical resistance of said material increases to that of a non-superconducting state as the grains of said material transition from said superconducting to said non-superconducting state

Magnetic properties of strip-like Josephson-junction arrays

International Nuclear Information System (INIS)

Chen, D.-X; Moreno, J.J.; Hernando, A.; Sanchez, A.

2000-01-01

Zero-field-cooled (ZFC) and field-cooled (FC) magnetic properties of strip-like Josephson-junction (JJ) arrays with very strong demagnetizing effects are calculated from basic laws. Similar to slab-like JJ arrays without considering demagnetizing effects, a vortex state evolves to a critical state (CS) with increasing maximum JJ currents in the ZFC case, and a vortex state always remains with a negative low-field susceptibility in the FC case. However, the strong demagnetizing effects cause qualitative changes in the CS, where the overall feature of the field and current profiles turns out to be similar to that in type-II superconducting strips, but not like the ordinary Bean CS in slab-like JJ arrays, the CS current profile is never flat and the critical current is no longer a step function of the maximum JJ current as in slab-like JJ arrays. The calculated results of different types of JJ arrays indicate that although the intergranular CS in granular superconductors may have a common origin, the discovered paramagnetic Meissner effect in them is still difficult to explain. (author)

NbN tunnel junctions

International Nuclear Information System (INIS)

Villegier, J.C.; Vieux-Rochaz, L.; Goniche, M.; Renard, P.; Vabre, M.

1984-09-01

All-niobium nitride Josephon junctions have been prepared successfully using a new processing called SNOP: Selective Niobium (nitride) Overlap Process. Such a process involves the ''trilayer'' deposition on the whole wafer before selective patterning of the electrodes by optically controlled dry reactive ion etching. Only two photomask levels are need to define an ''overlap'' or a ''cross-type'' junction with a good accuracy. The properties of the niobium nitride films deposited by DC-magnetron sputtering and the surface oxide growth are analysed. The most critical point to obtain high quality and high gap value junctions resides in the early stage of the NbN counterelectrode growth. Some possibilities to overcome such a handicap exist even if the fabrication needs substrate temperatures below 250 0 C

Harmonic synchronization in resistively coupled Josephson junctions

International Nuclear Information System (INIS)

Blackburn, J.A.; Gronbech-Jensen, N.; Smith, H.J.T.

1994-01-01

The oscillations of two resistively coupled Josephson junctions biased only by a single dc current source are shown to lock harmonically in a 1:2 mode over a significant range of bias current, even when the junctions are identical. The dependence of this locking on both junction and coupling parameters is examined, and it is found that, for this particular two-junction configuration, 1:1 locking can never occur, and also that a minimum coupling coefficient is needed to support harmonic locking. Some issues related to subharmonic locking are also discussed

Small--radiation-amplitude dynamical voltage model of an irradiated, externally unbiased Josephson tunnel junction

International Nuclear Information System (INIS)

McAdory, R.T. Jr.

1988-01-01

A theory is presented for the nonequilibrium voltage states of an irradiated Josephson junction shunted by an external resistor but with no external current or voltage biasing. This device, referred to as a free-running Josephson junction, is modeled in a small--radiation-amplitude, deterministic regime extending the previous work of Shenoy and Agarwal. The time-averaged induced voltage is treated as a dynamical variable, the external radiation is modeled as a current source, and the induced junction-radiation vector potential, with and without a mode structure, is treated to first order in the driving currents. A dynamical equation for the time-averaged induced voltage yields a (nonequilibrium) steady-state relation between the time-averaged induced voltage and the incident radiation amplitude valid for a wide range of voltages, including zero. Regions of bistability occur in the voltage--versus--incident-amplitude curves, some of which are dependent on the external resistor. The zero-voltage state breaks down, as the external radiation amplitude is increased, at a critical value of the incident-radiation amplitude inversely proportional to the external resistance

Non-equilibrium properties of Josephson critical current in Nb-based three terminal superconducting tunnel devices

International Nuclear Information System (INIS)

Ammendola, G.; Parlato, L.; Peluso, G.; Pepe, G.

1998-01-01

Tunnel quasi-particle injection into a superconducting film provides useful information on the non-equilibrium state inside the perturbed superconductor as well as on the potential application to electronic devices. Three terminal injector-detector superconducting devices have a long history in non-equilibrium superconductivity. In the recent past non-equilibrium phenomena have attracted again considerable attention because of many superconducting based detectors involve processes substantially non-equilibrium in nature. The possibility of using a stacked double tunnel junction to study the influence of non-equilibrium superconductivity on the Josephson critical current is now considered. An experimental study of the effect of quasi-particle injection on the Josephson current both in steady-state and pulsed experiments down to T=1.2 K is presented using 3 terminal Nb-based stacked double tunnel devices. The feasibility of a new class of particle detectors based on the direct measurement of the change in the Josephson current following the absorption of a X-ray quantum is also discussed in terms of non-equilibrium theories. (orig.)

The Leakage Current Improvement of a Ni-Silicided SiGe/Si Junction Using a Si Cap Layer and the PAI Technique

International Nuclear Information System (INIS)

Chang Jian-Guang; Wu Chun-Bo; Ji Xiao-Li; Ma Hao-Wen; Yan Feng; Shi Yi; Zhang Rong

2012-01-01

We investigate the leakage current of ultra-shallow Ni-silicided SiGe/Si junctions for 45 nm CMOS technology using a Si cap layer and the pre-amorphization implantation (PAI) process. It is found that with the conventional Ni silicide method, the leakage current of a p + (SiGe)—n(Si) junction is large and attributed to band-to-band tunneling and the generation-recombination process. The two leakage contributors can be suppressed quite effectively when a Si cap layer is added in the Ni silicide method. The leakage reduction is about one order of magnitude and could be associated with the suppression of the agglomeration of the Ni germano-silicide film. In addition, the PAI process after the application of a Si cap layer has little effect on improving the junction leakage but reduces the sheet resistance of the silicide film. As a result, the novel Ni silicide method using a Si cap combined with PAI is a promising choice for SiGe junctions in advanced technology. (cross-disciplinary physics and related areas of science and technology)

Optimized electrode configuration for current-in-plane characterization of magnetic tunnel junction stacks

DEFF Research Database (Denmark)

Cagliani, Alberto; Kjær, Daniel; Østerberg, Frederik Westergaard

2017-01-01

The current-in-plane tunneling technique (CIPT) has been a crucial tool in the development of magnetic tunnel junction stacks suitable for magnetic random access memories (MRAM) for more than a decade. The MRAM development has now reached the maturity to make the transition from the R&D phase...... of electrodes on a multi-electrode probe to reach up to 36% improvement on the repeatability for the resistance area product and the tunneling magnetoresistance measurement, without any hardware modification....

Voltage-driven versus current-driven spin torque in anisotropic tunneling junctions

KAUST Repository

Manchon, Aurelien

2011-01-01

Nonequilibrium spin transport in a magnetic tunnel junction comprising a single magnetic layer in the presence of interfacial spin-orbit interaction (SOI) is studied theoretically. The interfacial SOI generates a spin torque of the form T=T∥ M×(z× M)+T⊥ z× M, even in the absence of an external spin polarizer. For thick and large tunnel barriers, the torque reduces to the perpendicular component T⊥, which can be electrically tuned by applying a voltage across the insulator. In the limit of thin and low tunnel barriers, the in-plane torque T∥ emerges, proportional to the tunneling current density. Experimental implications on magnetic devices are discussed. © 2011 IEEE.

Voltage-driven versus current-driven spin torque in anisotropic tunneling junctions

KAUST Repository

Manchon, Aurelien

2011-10-01

Nonequilibrium spin transport in a magnetic tunnel junction comprising a single magnetic layer in the presence of interfacial spin-orbit interaction (SOI) is studied theoretically. The interfacial SOI generates a spin torque of the form T=T∥ M×(z× M)+T⊥ z× M, even in the absence of an external spin polarizer. For thick and large tunnel barriers, the torque reduces to the perpendicular component T⊥, which can be electrically tuned by applying a voltage across the insulator. In the limit of thin and low tunnel barriers, the in-plane torque T∥ emerges, proportional to the tunneling current density. Experimental implications on magnetic devices are discussed. © 2011 IEEE.

Charge-transport in Josephson-junctions with ferromagnetic Ni3Al-interlayer

International Nuclear Information System (INIS)

Born, F.

2006-01-01

The present dissertation reports on experimental studies about superconducting coupling through a thin Ni 76 Al 24 film. A new patterning process has been developed, which allows in combination with the wedge shaped deposition technique the in situ deposition of 20 single Nb/Al/Al 2 O 3 /Ni 3 Al/Nb multilayers, each with its own well defined Ni 3 Al thickness. Every single multilayer consists of 10 different sized Josephson junctions, showing a high reproducibility and scaling with its junction area. Up to six damped oscillations of the critical current density against F-layer thickness were observed, revealing three single 0-π-transitions in the ground state of Josephson junctions. Contrary to former experimental studies, the exponential decay length is one magnitude larger than the oscillation period defining decay length. The theoretical predictions based on linearised Eilenberger equations results in excellent agreement of theory and experimental results. (orig.)

Critical temperature gradient and critical current density in thin films of a type I superconductor

Energy Technology Data Exchange (ETDEWEB)

Heubener, R P

1968-12-16

Measurements of the critical temperature gradient and the critical current density in superconducting lead films in a transverse magnetic field indicate that the critical current flows predominantly along the surface of the films and that the critical surface currents contribute only very little to the Lorentz force on a fluxoid.

Leakage current reduction of vertical GaN junction barrier Schottky diodes using dual-anode process

Science.gov (United States)

Hayashida, Tetsuro; Nanjo, Takuma; Furukawa, Akihiko; Watahiki, Tatsuro; Yamamuka, Mikio

2018-04-01

The origin of the leakage current of a trench-type vertical GaN diode was discussed. We found that the edge of p-GaN is the main leakage spot. To reduce the reverse leakage current at the edge of p-GaN, a dual-anode process was proposed. As a result, the reverse blocking voltage defined at the leakage current density of 1 mA/cm2 of a vertical GaN junction barrier Schottky (JBS) diode was improved from 780 to 1,190 V, which is the highest value ever reported for vertical GaN Schottky barrier diodes (SBDs).

Magnetic and transport properties of single and double perpendicular magnetic tunnel junctions

International Nuclear Information System (INIS)

Cuchet, Lea

2015-01-01

Due to their advantageous properties in terms of data retention, storage density and critical current density for Spin Transfer Torque (STT) switching, the magnetic tunnel junctions with perpendicular anisotropy have become predominant in the developments for MRAM applications. The aim of this thesis is to improve the anisotropy and transport properties of such structures and to realize even more complex stacks such as perpendicular double junctions. Studies on the magnetic properties and Tunnel Magnetoresistance (TMR) measurements showed that to optimize the performances of the junctions, all the thicknesses of the different layers constituting the stack have to be adapted. To guaranty both a large TMR as well a strong perpendicular anisotropy, compromises are most of the time needed. Studies as a function of magnetic thickness enabled to extract the saturation magnetization, the critical thickness and the magnetic dead layer thickness both in the bottom reference and the top storage layer in structures capped with Ta. This type of junction could be tested electrically after patterning the sample into nano-pillars. Knowing that perpendicular anisotropy mostly arises at the metal/oxide interface, the Ta capping layer was replaced by a MgO one, leading to a huge increase in the anisotropy of the free layer. A second top reference was then added on such a stack to create functional perpendicular double junctions. CoFeB/insertion/CoFeB synthetic antiferromagnetic storage layers could be developed and were proved to be stable enough to replace the standard Co/Pt-based reference layers. (author) [fr

In-situ YBa2Cu3O7/SrTiO3/YBa2Cu3O7 a-b plane Josephson edge junctions

International Nuclear Information System (INIS)

Aharoni, E.; Koren, G.; Polturak, E.; Cohen, D.; Iskevitch, E.

1992-01-01

YBCO/SrTiO 3 /YBCO thin film edge junctions were prepared in-situ and characterized. The epitaxial growth of SrTiO 3 on YBCO led to a sharp and well defined junction edge with a very high yield. Typical junctions showed critical currents up to 83 K, with I c ∝ (1 - T/Tc) 2 temperature dependence. Sharp Shapiro steps were observed under microwave radiation at temperatures up to 82 K. A typical diffraction pattern was found in the voltage response of the junctions to transverse magnetic field. (orig.)

Josephson junctions of multiple superconducting wires

Science.gov (United States)

Deb, Oindrila; Sengupta, K.; Sen, Diptiman

2018-05-01

We study the spectrum of Andreev bound states and Josephson currents across a junction of N superconducting wires which may have s - or p -wave pairing symmetries and develop a scattering matrix based formalism which allows us to address transport across such junctions. For N ≥3 , it is well known that Berry curvature terms contribute to the Josephson currents; we chart out situations where such terms can have relatively large effects. For a system of three s -wave or three p -wave superconductors, we provide analytic expressions for the Andreev bound-state energies and study the Josephson currents in response to a constant voltage applied across one of the wires; we find that the integrated transconductance at zero temperature is quantized to integer multiples of 4 e2/h , where e is the electron charge and h =2 π ℏ is Planck's constant. For a sinusoidal current with frequency ω applied across one of the wires in the junction, we find that Shapiro plateaus appear in the time-averaged voltage across that wire for any rational fractional multiple (in contrast to only integer multiples in junctions of two wires) of 2 e /(ℏ ω ) . We also use our formalism to study junctions of two p -wave and one s -wave wires. We find that the corresponding Andreev bound-state energies depend on the spin of the Bogoliubov quasiparticles; this produces a net magnetic moment in such junctions. The time variation of these magnetic moments may be controlled by an external voltage applied across the junction. We discuss experiments which may test our theory.

Temperature-sensitive junction transformations for mid-wavelength HgCdTe photovoltaic infrared detector arrays by laser beam induced current microscope

Energy Technology Data Exchange (ETDEWEB)

Qiu, Weicheng [College of Photoelectric Science and Engineering, National University of Defense Technology, Changsha, Hunan 410073 (China); National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083 (China); Hu, Weida, E-mail: wdhu@mail.sitp.ac.cn; Lin, Tie; Yin, Fei; Zhang, Bo; Chen, Xiaoshuang; Lu, Wei [National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083 (China); Cheng, Xiang' ai, E-mail: xiang-ai-cheng@126.com; Wang, Rui [College of Photoelectric Science and Engineering, National University of Defense Technology, Changsha, Hunan 410073 (China)

2014-11-10

In this paper, we report on the disappearance of the photosensitive area extension effect and the unusual temperature dependence of junction transformation for mid-wavelength, n-on-p HgCdTe photovoltaic infrared detector arrays. The n-type region is formed by B{sup +} ion implantation on Hg-vacancy-doped p-type HgCdTe. Junction transformations under different temperatures are visually captured by a laser beam induced current microscope. A physical model of temperature dependence on junction transformation is proposed and demonstrated by using numerical simulations. It is shown that Hg-interstitial diffusion and temperature activated defects jointly lead to the p-n junction transformation dependence on temperature, and the weaker mixed conduction compared with long-wavelength HgCdTe photodiode contributes to the disappearance of the photosensitive area extension effect in mid-wavelength HgCdTe infrared detector arrays.

Site-Selection in Single-Molecule Junction for Highly Reproducible Molecular Electronics.

Science.gov (United States)

Kaneko, Satoshi; Murai, Daigo; Marqués-González, Santiago; Nakamura, Hisao; Komoto, Yuki; Fujii, Shintaro; Nishino, Tomoaki; Ikeda, Katsuyoshi; Tsukagoshi, Kazuhito; Kiguchi, Manabu

2016-02-03

Adsorption sites of molecules critically determine the electric/photonic properties and the stability of heterogeneous molecule-metal interfaces. Then, selectivity of adsorption site is essential for development of the fields including organic electronics, catalysis, and biology. However, due to current technical limitations, site-selectivity, i.e., precise determination of the molecular adsorption site, remains a major challenge because of difficulty in precise selection of meaningful one among the sites. We have succeeded the single site-selection at a single-molecule junction by performing newly developed hybrid technique: simultaneous characterization of surface enhanced Raman scattering (SERS) and current-voltage (I-V) measurements. The I-V response of 1,4-benzenedithiol junctions reveals the existence of three metastable states arising from different adsorption sites. Notably, correlated SERS measurements show selectivity toward one of the adsorption sites: "bridge sites". This site-selectivity represents an essential step toward the reliable integration of individual molecules on metallic surfaces. Furthermore, the hybrid spectro-electric technique reveals the dependence of the SERS intensity on the strength of the molecule-metal interaction, showing the interdependence between the optical and electronic properties in single-molecule junctions.

Fabrication and characterization of intrinsic Josephson junctions in RE-123 whiskers

International Nuclear Information System (INIS)

Okutsu, T.; Ueda, S.; Ishii, S.; Nagasawa, M.; Takano, Y.

2008-01-01

The series of REBa 2 Cu 3 O 7-δ RE-123; RE = Y, Eu, Gd, Dy, Ho, Er, Tm, and Lu) single-crystal whiskers have been successfully grown using the Te- or Sb-doping method. Intrinsic Josephson junctions (IJJs) were fabricated from the whiskers using a focused ion beam (FIB). As-grown IJJs with T c > 70 K showed a Josephson current but no multi-branches in the current-voltage (I-V) characteristics. Under-doped specimens were obtained by a post-annealing process. As-grown IJJs with lower T c and all the specimens of the post-annealed IJJs showed clear multi-branched structure. The post-annealing reduced the critical temperature (T c ) and the critical current density (J c ) of the IJJs, and increased the anisotropic parameter γ

Weak links in high critical temperature superconductors

Science.gov (United States)

Tafuri, Francesco; Kirtley, John R.

2005-11-01

The traditional distinction between tunnel and highly transmissive barriers does not currently hold for high critical temperature superconducting Josephson junctions, both because of complicated materials issues and the intrinsic properties of high temperature superconductors (HTS). An intermediate regime, typical of both artificial superconductor-barrier-superconductor structures and of grain boundaries, spans several orders of magnitude in the critical current density and specific resistivity. The physics taking place at HTS surfaces and interfaces is rich, primarily because of phenomena associated with d-wave order parameter (OP) symmetry. These phenomena include Andreev bound states, the presence of the second harmonic in the critical current versus phase relation, a doubly degenerate state, time reversal symmetry breaking and the possible presence of an imaginary component of the OP. All these effects are regulated by a series of transport mechanisms, whose rules of interplay and relative activation are unknown. Some transport mechanisms probably have common roots, which are not completely clear and possibly related to the intrinsic nature of high-TC superconductivity. The d-wave OP symmetry gives unique properties to HTS weak links, which do not have any analogy with systems based on other superconductors. Even if the HTS structures are not optimal, compared with low critical temperature superconductor Josephson junctions, the state of the art allows the realization of weak links with unexpectedly high quality quantum properties, which open interesting perspectives for the future. The observation of macroscopic quantum tunnelling and the qubit proposals represent significant achievements in this direction. In this review we attempt to encompass all the above aspects, attached to a solid experimental basis of junction concepts and basic properties, along with a flexible phenomenological background, which collects ideas on the Josephson effect in the presence

Weak links in high critical temperature superconductors

International Nuclear Information System (INIS)

Tafuri, Francesco; Kirtley, John R

2005-01-01

The traditional distinction between tunnel and highly transmissive barriers does not currently hold for high critical temperature superconducting Josephson junctions, both because of complicated materials issues and the intrinsic properties of high temperature superconductors (HTS). An intermediate regime, typical of both artificial superconductor-barrier-superconductor structures and of grain boundaries, spans several orders of magnitude in the critical current density and specific resistivity. The physics taking place at HTS surfaces and interfaces is rich, primarily because of phenomena associated with d-wave order parameter (OP) symmetry. These phenomena include Andreev bound states, the presence of the second harmonic in the critical current versus phase relation, a doubly degenerate state, time reversal symmetry breaking and the possible presence of an imaginary component of the OP. All these effects are regulated by a series of transport mechanisms, whose rules of interplay and relative activation are unknown. Some transport mechanisms probably have common roots, which are not completely clear and possibly related to the intrinsic nature of high-T C superconductivity. The d-wave OP symmetry gives unique properties to HTS weak links, which do not have any analogy with systems based on other superconductors. Even if the HTS structures are not optimal, compared with low critical temperature superconductor Josephson junctions, the state of the art allows the realization of weak links with unexpectedly high quality quantum properties, which open interesting perspectives for the future. The observation of macroscopic quantum tunnelling and the qubit proposals represent significant achievements in this direction. In this review we attempt to encompass all the above aspects, attached to a solid experimental basis of junction concepts and basic properties, along with a flexible phenomenological background, which collects ideas on the Josephson effect in the presence

Spin-dependent quasiparticle tunneling in junction superconductor-isolator-ferromagnetic

International Nuclear Information System (INIS)

Shlapak, Yu.V.; Shaternik, V.E.; Rudenko, E.M.

2001-01-01

The influence of Andreev reflection of quasiparticles in transparent tunnel junctions of superconductor-isolator-ferromagnetic on electric-current transport is studied within the framework of the Blonder-Tinkham-Klapwijk (BTK) model. It's obtained that current and signal-to-noise ratio can be increased for the memory cell by using in it the double-barrier tunnel junction ferromagnetic-isolator-superconductor-isolator-ferromagnetic instead off the usual tunnel junction ferromagnetic-isolator-ferromagnetic. The evolution of non-linear (tunnel-type) current-voltage characteristics with increasing of the junction transparency is described. (orig.)

Vertical current-flow enhancement via fabrication of GaN nanorod p–n junction diode on graphene

Energy Technology Data Exchange (ETDEWEB)

Ryu, Sung Ryong [Quantum-functional Semiconductor Research Center, Dongguk University-Seoul, 100-715 (Korea, Republic of); Department of physics, Dongguk University, Seoul, 100-715 (Korea, Republic of); Ram, S.D. Gopal; Lee, Seung Joo; Cho, Hak-dong; Lee, Sejoon [Quantum-functional Semiconductor Research Center, Dongguk University-Seoul, 100-715 (Korea, Republic of); Kang, Tae Won, E-mail: twkang@dongguk.edu [Quantum-functional Semiconductor Research Center, Dongguk University-Seoul, 100-715 (Korea, Republic of); Clean Energy and Nano Convergence Centre, Hindustan University, Chennai 600 016 (India); Kwon, Sangwoo; Yang, Woochul [Department of physics, Dongguk University, Seoul, 100-715 (Korea, Republic of); Shin, Sunhye [Soft-Epi Inc., 240 Opo-ro, Opo-eup, Gwangju-si, Gyeonggi-do (Korea, Republic of); Woo, Yongdeuk [Department of Mechanical and Automotive Engineering, Woosuk University, Chonbuk 565-701 (Korea, Republic of)

2015-08-30

Highlights: • Uniaxial p–n junction diode in GaN nanorod is made by Hydride vapor phase epitaxy method. • The p–n junction diode property is clearly observed from the fabricated uniaxial p–n junction nanorod GaN nanorod. • Graphene is used as a current spreading layer to reduce the lateral resistance up to 700 times when compared with the commercial sapphire substrate, which is clearly explained with the aid of an equivalent circuit. • Kelvin Force Probe microscopy method is employed to visualize the p- and n- regions in a single GaN nanorod. - Abstract: Mg doped GaN nanorods were grown on undoped n-type GaN nanorods uniaxial on monolayer graphene by hydride vapor phase epitaxy (HVPE) method. The monolayer graphene used as the bottom electrode and a substrate as well provides good electrical contact, acts as a current spreading layer, well suitable for the growth of hexagonal GaN nanorod. In addition it has a work function suitable to that of n-GaN. The formed p–n nanorods show a Schottky behavior with a turn on voltage of 3 V. Using graphene as the substrate, the resistance of the nanorod is reduced by 700 times when compared with the case without using graphene as the current spreading layer. The low resistance of graphene acts in parallel with the resistance of the GaN buffer layer, and reduces the resistance drastically. The formed p–n junction in a single GaN nanorod is visualized by Kelvin Force Probe Microscopy (KPFM) to have distinctively contrast p and n regions. The measured contact potential difference of p-and n-region has a difference of 103 mV which well confirms the formed regions are electronically different. Low temperature photoluminescence (PL) spectra give evidence of dopant related acceptor bound emission at 3.2 eV different from 3.4 eV of undoped GaN. The crystalline structure, compositional purity is confirmed by X-ray diffraction (XRD), Transmission and Scanning electron microcopies (SEM), (TEM), Energy dispersive analysis

Vertical current-flow enhancement via fabrication of GaN nanorod p–n junction diode on graphene

International Nuclear Information System (INIS)

Ryu, Sung Ryong; Ram, S.D. Gopal; Lee, Seung Joo; Cho, Hak-dong; Lee, Sejoon; Kang, Tae Won; Kwon, Sangwoo; Yang, Woochul; Shin, Sunhye; Woo, Yongdeuk

2015-01-01

Highlights: • Uniaxial p–n junction diode in GaN nanorod is made by Hydride vapor phase epitaxy method. • The p–n junction diode property is clearly observed from the fabricated uniaxial p–n junction nanorod GaN nanorod. • Graphene is used as a current spreading layer to reduce the lateral resistance up to 700 times when compared with the commercial sapphire substrate, which is clearly explained with the aid of an equivalent circuit. • Kelvin Force Probe microscopy method is employed to visualize the p- and n- regions in a single GaN nanorod. - Abstract: Mg doped GaN nanorods were grown on undoped n-type GaN nanorods uniaxial on monolayer graphene by hydride vapor phase epitaxy (HVPE) method. The monolayer graphene used as the bottom electrode and a substrate as well provides good electrical contact, acts as a current spreading layer, well suitable for the growth of hexagonal GaN nanorod. In addition it has a work function suitable to that of n-GaN. The formed p–n nanorods show a Schottky behavior with a turn on voltage of 3 V. Using graphene as the substrate, the resistance of the nanorod is reduced by 700 times when compared with the case without using graphene as the current spreading layer. The low resistance of graphene acts in parallel with the resistance of the GaN buffer layer, and reduces the resistance drastically. The formed p–n junction in a single GaN nanorod is visualized by Kelvin Force Probe Microscopy (KPFM) to have distinctively contrast p and n regions. The measured contact potential difference of p-and n-region has a difference of 103 mV which well confirms the formed regions are electronically different. Low temperature photoluminescence (PL) spectra give evidence of dopant related acceptor bound emission at 3.2 eV different from 3.4 eV of undoped GaN. The crystalline structure, compositional purity is confirmed by X-ray diffraction (XRD), Transmission and Scanning electron microcopies (SEM), (TEM), Energy dispersive analysis

Enhancing critical current density of cuprate superconductors

Science.gov (United States)

Chaudhari, Praveen

2015-06-16

The present invention concerns the enhancement of critical current densities in cuprate superconductors. Such enhancement of critical current densities include using wave function symmetry and restricting movement of Abrikosov (A) vortices, Josephson (J) vortices, or Abrikosov-Josephson (A-J) vortices by using the half integer vortices associated with d-wave symmetry present in the grain boundary.

Critical currents in multilayered superconducting films

International Nuclear Information System (INIS)

Raffy, Helene

1977-01-01

The superconducting critical currents Isub(c) were measured as a function of magnetic field H and temperature T, on multilayered films. These films consist of alternating layers of two different superconductors S 1 and S 2 being a weaker superconductor acting as a flux pinning barrier region. A strong anisotropy was observed between the two situations where the magnetic field H is applied parallel or perpendicular to the layers. In the case discussed, there is a peak effect in the curves Isub(c)H well defined at the highest temperatures, and disappearing at low temperatures. The anisotropy of the critical current at constant field presents a maximum at a temperature T* close to the critical temperature Tsub(c 2 ) of S 2 [fr

Valley and spin resonant tunneling current in ferromagnetic/nonmagnetic/ferromagnetic silicene junction

Directory of Open Access Journals (Sweden)

Yaser Hajati

2016-02-01

Full Text Available We study the transport properties in a ferromagnetic/nonmagnetic/ferromagnetic (FNF silicene junction in which an electrostatic gate potential, U, is attached to the nonmagnetic region. We show that the electrostatic gate potential U is a useful probe to control the band structure, quasi-bound states in the nonmagnetic barrier as well as the transport properties of the FNF silicene junction. In particular, by introducing the electrostatic gate potential, both the spin and valley conductances of the junction show an oscillatory behavior. The amplitude and frequency of such oscillations can be controlled by U. As an important result, we found that by increasing U, the second characteristic of the Klein tunneling is satisfied as a result of the quasiparticles chirality which can penetrate through a potential barrier. Moreover, it is found that for special values of U, the junction shows a gap in the spin and valley-resolve conductance and the amplitude of this gap is only controlled by the on-site potential difference, Δz. Our findings of high controllability of the spin and valley transport in such a FNF silicene junction may improve the performance of nano-electronics and spintronics devices.

Investigation of short and ballistic coupling in vertical NbSe2 - graphene - NbSe2 Josephson junctions

Science.gov (United States)

Kim, Minsoo; Park, Geon-Hyoung; Yi, Jongyoon; Lee, Jae Hyeong; Park, Jinho; Lee, Hu-Jong

2H-NbSe2 is a layered two-dimensional superconducting material, which can be constructed into a van der Waals heterostructure with versatile functionality. Here we fabricated a vertically stacked NbSe2 - graphene - NbSe2 heterostructure by the dry transfer technique, where defect-free contact via van der Waals force provides the high interfacial transparency. Insertion of an atomically thin graphene layer between two NbSe2 flakes ensures the formation of highly coherent proximity Josephson coupling. Observed temperature dependence of the junction critical current (Ic) and large value of IcRn product (as large as 2.3ΔNbSe 2) reveal the short and ballistic Josephson coupling characteristics. Large junction critical current density of 104 A/cm2, multiple Andreev reflection in the subgap structure of the differential conductance, and magnetic field modulation of Ic also suggest the strong Josephson coupling via the graphene layer.

Turbulence, chaos and thermal noise in globally coupled Josephson junction arrays

International Nuclear Information System (INIS)

Dominguez, D.

1995-03-01

We discuss the effects of thermal noise in underdamped Josephson junction series arrays that are globally coupled through a resistive load and driven by an rf current. We study the breakdown of the law of large numbers in the turbulent phase of the Josephson arrays. This corresponds to a saturation of the broad band noise S 0 for a large number N of junctions. We find that this phenomenon is stable against thermal fluctuations below a critical temperature T cl . The behaviour of S 0 vs. T, for large N, shows three different regimes. For 0 cl , S 0 decreases when increasing T, and there is turbulence and the breakdown of the law of large numbers. For T cl c2 , S 0 is constant and the dynamics is dominated by the chaos of the individual junctions. Finally for T > T c2 , S 0 in mainly due to thermal fluctuations, since it increases linearly with T. (author). 23 refs, 6 figs

Energy scales in YBaCuO grain boundary biepitaxial Josephson junctions

Energy Technology Data Exchange (ETDEWEB)

Tafuri, F., E-mail: tafuri@na.infn.it [Dip. Ingegneria dell' Informazione, Seconda Universita di Napoli, 81031 Aversa (CE) (Italy); CNR-SPIN, UOS Napoli, Monte S. Angelo via Cinthia, 80126 Napoli (Italy); Dip. Scienze Fisiche, Universita di Napoli Federico II, Monte S. Angelo via Cinthia, 80126 Napoli (Italy); Stornaiuolo, D. [DPMC, University of Geneva, 24 Quai Ernest-Ansermet, 1211 Geneva 4 (Switzerland); CNR-SPIN, UOS Napoli, Monte S. Angelo via Cinthia, 80126 Napoli (Italy); Lucignano, P. [CNR-ISC, sede di Tor Vergata, Via del Fosso del Cavaliere 100, 00133 Roma (Italy); Dip. Scienze Fisiche, Universita di Napoli Federico II, Monte S. Angelo via Cinthia, 80126 Napoli (Italy); Galletti, L. [Dip. Scienze Fisiche, Universita di Napoli Federico II, Monte S. Angelo via Cinthia, 80126 Napoli (Italy); Longobardi, L. [Dip. Ingegneria dell' Informazione, Seconda Universita di Napoli, 81031 Aversa (CE) (Italy); Massarotti, D. [Dip. Scienze Fisiche, Universita di Napoli Federico II, Monte S. Angelo via Cinthia, 80126 Napoli (Italy); CNR-SPIN, UOS Napoli, Monte S. Angelo via Cinthia, 80126 Napoli (Italy); Montemurro, D. [NEST and Scuola Normale Superiore, Piazza San Silvestro 12, I-56127 Pisa (Italy); Papari, G. [INPAC - Institute for Nanoscale Physics and Chemistry, Nanoscale Superconductivity and Magnetism Pulsed Fields Group, K.U. Leuven, Celestijnenlaan 200 D, B-3001 Leuven (Belgium); Dip. Scienze Fisiche, Universita di Napoli Federico II, Monte S. Angelo via Cinthia, 80126 Napoli (Italy); Barone, A.; Tagliacozzo, A. [Dip. Scienze Fisiche, Universita di Napoli Federico II, Monte S. Angelo via Cinthia, 80126 Napoli (Italy); CNR-SPIN, UOS Napoli, Monte S. Angelo via Cinthia, 80126 Napoli (Italy)

2012-09-15

Self-assembled nanoscale channels may naturally arise in the growth process of grain boundaries (GBs) in high critical temperature superconductor (HTS) systems, and deeply influence the transport properties of the GB Josephson junctions (JJs). By isolating nano-channels in YBCO biepitaxial JJs and studying their properties, we sort out specific fingerprints of the mesoscopic nature of the contacts. The size of the channels combined to the characteristic properties of HTS favors a special regime of the proximity effect, where normal state coherence prevails on the superconducting coherence in the barrier region. Resistance oscillations from the current-voltage characteristic encode mesoscopic information on the junction and more specifically on the minigap induced in the barrier. Thouless energy emerges as a characteristic energy of these types of Josephson junctions. Possible implications on the understanding of coherent transport of quasiparticles in HTS and of the dissipation mechanisms are discussed, along with elements to take into account when designing HTS nanostructures.

Design of thin InGaAsN(Sb) n-i-p junctions for use in four-junction concentrating photovoltaic devices

Science.gov (United States)

Wilkins, Matthew M.; Gupta, James; Jaouad, Abdelatif; Bouzazi, Boussairi; Fafard, Simon; Boucherif, Abderraouf; Valdivia, Christopher E.; Arès, Richard; Aimez, Vincent; Schriemer, Henry P.; Hinzer, Karin

2017-04-01

Four-junction solar cells for space and terrestrial applications require a junction with a band gap of ˜1 eV for optimal performance. InGaAsN or InGaAsN(Sb) dilute nitride junctions have been demonstrated for this purpose, but in achieving the 14 mA/cm2 short-circuit current needed to match typical GaInP and GaAs junctions, the open-circuit voltage (VOC) and fill factor of these junctions are compromised. In multijunction devices incorporating materials with short diffusion lengths, we study the use of thin junctions to minimize sensitivity to varying material quality and ensure adequate transmission into lower junctions. An n-i-p device with 0.65-μm absorber thickness has sufficient short-circuit current, however, it relies less heavily on field-aided collection than a device with a 1-μm absorber. Our standard cell fabrication process, which includes a rapid thermal anneal of the contacts, yields a significant improvement in diffusion length and device performance. By optimizing a four-junction cell around a smaller 1-sun short-circuit current of 12.5 mA/cm2, we produced an InGaAsN(Sb) junction with open-circuit voltage of 0.44 V at 1000 suns (1 sun=100 mW/cm2), diode ideality factor of 1.4, and sufficient light transmission to allow >12.5 mA/cm2 in all four subcells.

The Dissolution of Double Holliday Junctions

DEFF Research Database (Denmark)

Bizard, Anna H; Hickson, Ian D

2014-01-01

as "double Holliday junction dissolution." This reaction requires the cooperative action of a so-called "dissolvasome" comprising a Holliday junction branch migration enzyme (Sgs1/BLM RecQ helicase) and a type IA topoisomerase (Top3/TopoIIIα) in complex with its OB (oligonucleotide/oligosaccharide binding......Double Holliday junctions (dHJS) are important intermediates of homologous recombination. The separate junctions can each be cleaved by DNA structure-selective endonucleases known as Holliday junction resolvases. Alternatively, double Holliday junctions can be processed by a reaction known......) fold containing accessory factor (Rmi1). This review details our current knowledge of the dissolution process and the players involved in catalyzing this mechanistically complex means of completing homologous recombination reactions....

High Critical Current Coated Conductors

Energy Technology Data Exchange (ETDEWEB)

Paranthaman, M. P.; Selvamanickam, V. (SuperPower, Inc.)

2011-12-27

One of the important critical needs that came out of the DOE’s coated conductor workshop was to develop a high throughput and economic deposition process for YBCO. Metal-organic chemical vapor deposition (MOCVD) technique, the most critical steps in high technical micro fabrications, has been widely employed in semiconductor industry for various thin film growth. SuperPower has demonstrated that (Y,Gd)BCO films can be deposited rapid with world record performance. In addition to high critical current density with increased film thickness, flux pinning properties of REBCO films needs to be improved to meet the DOE requirements for various electric-power equipments. We have shown that doping with Zr can result in BZO nanocolumns, but at substantially reduced deposition rate. The primary purpose of this subtask is to develop high current density MOCVD-REBCO coated conductors based on the ion-beam assisted (IBAD)-MgO deposition process. Another purpose of this subtask is to investigate HTS conductor design optimization (maximize Je) with emphasis on stability and protection issues, and ac loss for REBCO coated conductors.

Phase diagrams of particles with dissimilar patches: X-junctions and Y-junctions

International Nuclear Information System (INIS)

Tavares, J M; Teixeira, P I C

2012-01-01

We use Wertheim’s first-order perturbation theory to investigate the phase behaviour and the structure of coexisting fluid phases for a model of patchy particles with dissimilar patches (two patches of type A and f B patches of type B). A patch of type α = {A,B} can bond to a patch of type β = {A,B} in a volume v αβ , thereby decreasing the internal energy by ε αβ . We analyse the range of model parameters where AB bonds, or Y-junctions, are energetically disfavoured (ε AB AA /2) but entropically favoured (v AB ≫ v αα ), and BB bonds, or X-junctions, are energetically favoured (ε BB > 0). We show that, for low values of ε BB /ε AA , the phase diagram has three different regions: (i) close to the critical temperature a low-density liquid composed of long chains and rich in Y-junctions coexists with a vapour of chains; (ii) at intermediate temperatures there is coexistence between a vapour of short chains and a liquid of very long chains with X- and Y-junctions; (iii) at low temperatures an ideal gas coexists with a high-density liquid with all possible AA and BB bonds formed. It is also shown that in region (i) the liquid binodal is reentrant (its density decreases with decreasing temperature) for the lower values of ε BB /ε AA . The existence of these three regions is a consequence of the competition between the formation of X- and Y-junctions: X-junctions are energetically favoured and thus dominate at low temperatures, whereas Y-junctions are entropically favoured and dominate at higher temperatures. (paper)

Critical transport current in granular high temperature superconductors

International Nuclear Information System (INIS)

Bogolyubov, N.A.

1999-01-01

The temperature and size dependence of the critical current in a zero magnetic field of three bismuth-based ceramic samples with round cross section and one sample with rectangular triangle cross section have been studied by a contactless technique. It is shown that the critical current can be presented as a product of the temperature and size dependent factors. The temperature-dependent multiplier reflects the individual peculiarities of the Josephson net of each sample, while the size factor is a homogeneous function of the cross-section sizes. The index of this function is independent of the cross-section form, the temperature and individual properties of HTSC samples. The radial distribution of critical current density in round samples and dependence of the critical current density on the magnetic conduction in granular HTSC have been found from the analysis of experimental data

Phase-dependent noise in Josephson junctions

Science.gov (United States)

Sheldon, Forrest; Peotta, Sebastiano; Di Ventra, Massimiliano

2018-03-01

In addition to the usual superconducting current, Josephson junctions (JJs) support a phase-dependent conductance related to the retardation effect of tunneling quasi-particles. This introduces a dissipative current with a memory-resistive (memristive) character that should also affect the current noise. By means of the microscopic theory of tunnel junctions we compute the complete current autocorrelation function of a Josephson tunnel junction and show that this memristive component gives rise to both a previously noted phase-dependent thermal noise, and an undescribed non-stationary, phase-dependent dynamic noise. As experiments are approaching ranges in which these effects may be observed, we examine the form and magnitude of these processes. Their phase dependence can be realized experimentally as a hysteresis effect and may be used to probe defects present in JJ based qubits and in other superconducting electronics applications.

Peltier cooling in molecular junctions

Science.gov (United States)

Cui, Longji; Miao, Ruijiao; Wang, Kun; Thompson, Dakotah; Zotti, Linda Angela; Cuevas, Juan Carlos; Meyhofer, Edgar; Reddy, Pramod

2018-02-01

The study of thermoelectricity in molecular junctions is of fundamental interest for the development of various technologies including cooling (refrigeration) and heat-to-electricity conversion1-4. Recent experimental progress in probing the thermopower (Seebeck effect) of molecular junctions5-9 has enabled studies of the relationship between thermoelectricity and molecular structure10,11. However, observations of Peltier cooling in molecular junctions—a critical step for establishing molecular-based refrigeration—have remained inaccessible. Here, we report direct experimental observations of Peltier cooling in molecular junctions. By integrating conducting-probe atomic force microscopy12,13 with custom-fabricated picowatt-resolution calorimetric microdevices, we created an experimental platform that enables the unified characterization of electrical, thermoelectric and energy dissipation characteristics of molecular junctions. Using this platform, we studied gold junctions with prototypical molecules (Au-biphenyl-4,4'-dithiol-Au, Au-terphenyl-4,4''-dithiol-Au and Au-4,4'-bipyridine-Au) and revealed the relationship between heating or cooling and charge transmission characteristics. Our experimental conclusions are supported by self-energy-corrected density functional theory calculations. We expect these advances to stimulate studies of both thermal and thermoelectric transport in molecular junctions where the possibility of extraordinarily efficient energy conversion has been theoretically predicted2-4,14.

Star junctions and watermelons of pure or random quantum Ising chains: finite-size properties of the energy gap at criticality

Science.gov (United States)

Monthus, Cécile

2015-06-01

We consider M  ⩾  2 pure or random quantum Ising chains of N spins when they are coupled via a single star junction at their origins or when they are coupled via two star junctions at the their two ends leading to the watermelon geometry. The energy gap is studied via a sequential self-dual real-space renormalization procedure that can be explicitly solved in terms of Kesten variables containing the initial couplings and and the initial transverse fields. In the pure case at criticality, the gap is found to decay as a power-law {ΔM}\\propto {{N}-z(M)} with the dynamical exponent z(M)=\\frac{M}{2} for the single star junction (the case M   =   2 corresponds to z   =   1 for a single chain with free boundary conditions) and z(M)   =   M  -  1 for the watermelon (the case M   =   2 corresponds to z   =   1 for a single chain with periodic boundary conditions). In the random case at criticality, the gap follows the Infinite Disorder Fixed Point scaling \\ln {ΔM}=-{{N}\\psi}g with the same activated exponent \\psi =\\frac{1}{2} as the single chain corresponding to M   =   2, and where g is an O(1) random positive variable, whose distribution depends upon the number M of chains and upon the geometry (star or watermelon).

Sputter fabricated Nb-oxide-Nb josephson junctions incorporating post-oxidation noble metal layers

International Nuclear Information System (INIS)

Bain, R.J.P.; Donaldson, G.B.

1985-01-01

We present an extension, involving other metals, of the work of Hawkins and Clarke, who found that a thin layer of copper prevented the formation of the superconductive shorts which are an inevitable consequence of sputtering niobium counter-electrodes directly on top of niobium oxide. We find gold to be the most satisfactory, and that 0.3 nm is sufficient to guarantee short-free junctions of excellent electrical and mechanical stability, though high excess conductance means they are best suited to shunted-junction applications, as in SQUIDs. We present results for critical current dependence on oxide thickness and on gold thickness. Our data shows that thermal oxide growth is described by the Cabrera-Mott mechanism. We show that the protective effect of the gold layer can be understood in terms of the electro-chemistry of the Nb-oxide-Au structure, and that the reduced quasi-particle resistance of the junctions relative to goldfree junctions with evaporated counterelectrodes can be explained in terms of barrier shape modification, and not by proximity effect mechanisms. The performance of a DC SQUID based on these junctions is described

Interfacial spin-orbit splitting and current-driven spin torque in anisotropic tunnel junctions

KAUST Repository

Manchon, Aurelien

2011-05-17

Spin transport in magnetic tunnel junctions comprising a single magnetic layer in the presence of interfacial spin-orbit interaction (SOI) is investigated theoretically. Due to the presence of interfacial SOI, a current-driven spin torque can be generated at the second order in SOI, even in the absence of an external spin polarizer. This torque possesses two components, one in plane and one perpendicular to the plane of rotation, that can induce either current-driven magnetization switching from an in-plane to out-of-plane configuration or magnetization precessions, similar to spin transfer torque in spin valves. Consequently, it appears that it is possible to control the magnetization steady state and dynamics by either varying the bias voltage or electrically modifying the SOI at the interface.

Voltage-dependent conductance states of a single-molecule junction

DEFF Research Database (Denmark)

Wang, Y F; Néel, N; Kröger, J

2012-01-01

Ag–Sn-phthalocyanine–Ag junctions are shown to exhibit three conductance states. While the junctions are conductive at low bias, their impedance drastically increases above a critical bias. Two-level fluctuations occur at intermediate bias. These characteristics may be used to protect a nanoscale...

Critical current enhancement in high Tc superconductors

International Nuclear Information System (INIS)

Jin, S.; Graebner, J.E.; Tiefel, T.H.

1990-01-01

Progress toward major technological applications of the bulk, high T c superconductors has been hindered by two major barriers, i.e., the Josephson weak-links at grain boundaries and the lack of sufficient intragrain flux pinning. It has been demonstrated that the weak link problem can be overcome by extreme alignment of grains such as in melt-textured-growth (MTG) materials. Modified or improved processing by various laboratories has produced further increased critical currents. However, the insufficient flux pinning seems to limit the critical current density in high fields to about 10 4 --10 5 A/cm 2 at 77K, which is not satisfactory for many applications. In this paper, processing, microstructure, and critical current behavior of the MTG type superconductors are described, and various processing possibilities for flux pinning enhancement are discussed

Molecular series-tunneling junctions.

Science.gov (United States)

Liao, Kung-Ching; Hsu, Liang-Yan; Bowers, Carleen M; Rabitz, Herschel; Whitesides, George M

2015-05-13

Charge transport through junctions consisting of insulating molecular units is a quantum phenomenon that cannot be described adequately by classical circuit laws. This paper explores tunneling current densities in self-assembled monolayer (SAM)-based junctions with the structure Ag(TS)/O2C-R1-R2-H//Ga2O3/EGaIn, where Ag(TS) is template-stripped silver and EGaIn is the eutectic alloy of gallium and indium; R1 and R2 refer to two classes of insulating molecular units-(CH2)n and (C6H4)m-that are connected in series and have different tunneling decay constants in the Simmons equation. These junctions can be analyzed as a form of series-tunneling junctions based on the observation that permuting the order of R1 and R2 in the junction does not alter the overall rate of charge transport. By using the Ag/O2C interface, this system decouples the highest occupied molecular orbital (HOMO, which is localized on the carboxylate group) from strong interactions with the R1 and R2 units. The differences in rates of tunneling are thus determined by the electronic structure of the groups R1 and R2; these differences are not influenced by the order of R1 and R2 in the SAM. In an electrical potential model that rationalizes this observation, R1 and R2 contribute independently to the height of the barrier. This model explicitly assumes that contributions to rates of tunneling from the Ag(TS)/O2C and H//Ga2O3 interfaces are constant across the series examined. The current density of these series-tunneling junctions can be described by J(V) = J0(V) exp(-β1d1 - β2d2), where J(V) is the current density (A/cm(2)) at applied voltage V and βi and di are the parameters describing the attenuation of the tunneling current through a rectangular tunneling barrier, with width d and a height related to the attenuation factor β.

Rectification of current responds to incorporation of fullerenes into mixed-monolayers of alkanethiolates in tunneling junctions.

Science.gov (United States)

Qiu, Li; Zhang, Yanxi; Krijger, Theodorus L; Qiu, Xinkai; Hof, Patrick Van't; Hummelen, Jan C; Chiechi, Ryan C

2017-03-01

This paper describes the rectification of current through molecular junctions comprising self-assembled monolayers of decanethiolate through the incorporation of C 60 fullerene moieties bearing undecanethiol groups in junctions using eutectic Ga-In (EGaIn) and Au conducting probe AFM (CP-AFM) top-contacts. The degree of rectification increases with increasing exposure of the decanethiolate monolayers to the fullerene moieties, going through a maximum after 24 h. We ascribe this observation to the resulting mixed-monolayer achieving an optimal packing density of fullerene cages sitting above the alkane monolayer. Thus, the degree of rectification is controlled by the amount of fullerene present in the mixed-monolayer. The voltage dependence of R varies with the composition of the top-contact and the force applied to the junction and the energy of the lowest unoccupied π-state determined from photoelectron spectroscopy is consistent with the direction of rectification. The maximum value of rectification R = | J (+)/ J (-)| = 940 at ±1 V or 617 at ±0.95 V is in agreement with previous studies on pure monolayers relating the degree of rectification to the volume of the head-group on which the frontier orbitals are localized.

Exponential H and T decay of the critical current density in YBa2Cu3O7√/sub δ/ single crystals

International Nuclear Information System (INIS)

Senoussi, S.; Oussena, M.; Collin, G.; Campbell, I.A.

1988-01-01

We report magnetic measurements on single crystals of YBa 2 Cu 3 O 7 √/sub δ/. The magnetic critical current density in the Cu-O basal planes (1.5 x 10 6 Acm 2 at 4.2 K) decreases exponentially with temperature as well as with field for Tapprox. >50 K. This is ascribed to current tunneling through micro- Josephson-junctions. The behavior is radically different from that associated with macrojunctions typical of ''granular'' samples. It is argued that the anisotropy and the T-H anomalous behavior of J/sub c/ are connected with the T dependence and the anisotropy of both the coherence length and the electron mean free path

Critical-state model for the determination of critical currents in disk-shaped superconductors

International Nuclear Information System (INIS)

Frankel, D.J.

1979-01-01

A series of experiments has been carried out on the flux trapping and shielding capabilities of a flat strip of Nb-Ti/Cu composite material. A circular piece of material from the strip was tested in a uniform field directed perpendicularly to the surface of the sample. Profiles of the normal component of the field along the sample diameter were measured. The critical-state model was adapted for this geometry and proved capable of reproducing the measured field profiles. Model curves agreed well with experimental field profiles generated when the full sample was in the critical state, when only a portion of the sample was in the critical state, and when profiles were obtained after the direction of the rate change of the magnetic field was reversed. The adaption of the critical-state model to disk geometry provides a possible method either to derive values of the critical current from measurements of field profiles above thin flat samples, or to predict the trapping and shielding behavior of such samples if the critical current is already known. This method of determining critical currents does not require that samples be formed into narrow strips or wires, as is required for direct measurements of J/sub c/, or into tubes or cylinders, as is usually required for magnetization-type measurements. Only a relatively small approximately circular piece of material is needed. The method relies on induced currents, so there is no need to pass large currents into the sample. The field-profile measurements are easily performed with expensive Hall probes and do not require detection of the resistive transition of the superconductor

The anatomical locus of T-junction processing.

Science.gov (United States)

Schirillo, James A

2009-07-01

Inhomogeneous surrounds can produce either asymmetrical or symmetrical increment/decrement induction by orienting T-junctions to selectively group a test patch with surrounding regions [Melfi, T., & Schirillo, J. (2000). T-junctions in inhomogeneous surrounds. Vision Research, 40, 3735-3741]. The current experiments aimed to determine where T-junctions are processed by presenting each eye with a different image so that T-junctions exist only in the fused percept. Only minor differences were found between retinal and cortical versus cortical-only conditions, indicating that T-junctions are processed cortically.

From four- to two-channel Kondo effect in junctions of XY spin chains

Energy Technology Data Exchange (ETDEWEB)

Giuliano, Domenico, E-mail: domenico.giuliano@fis.unical.it [Dipartimento di Fisica, Università della Calabria, Arcavacata di Rende I-87036, Cosenza (Italy); INFN, Gruppo collegato di Cosenza, Arcavacata di Rende I-87036, Cosenza (Italy); Sodano, Pasquale, E-mail: pasquale.sodano02@gmail.com [International Institute of Physics, Universidade Federal do Rio Grande do Norte, 59078-400 Natal, RN (Brazil); Departemento de Física Teorica e Experimental, Universidade Federal do Rio Grande do Norte, 59072-970 Natal, RN (Brazil); Tagliacozzo, Arturo, E-mail: arturo.tagliacozzo@na.infn.it [INFN, Gruppo collegato di Cosenza, Arcavacata di Rende I-87036, Cosenza (Italy); Dipartimento di Fisica, Università di Napoli “Federico II”, Monte S. Angelo-Via Cintia, I-80126 Napoli (Italy); CNR-SPIN, Monte S. Angelo-Via Cintia, I-80126 Napoli (Italy); Trombettoni, Andrea, E-mail: andreatr@sissa.it [CNR-IOM DEMOCRITOS Simulation Center, Via Bonomea 265, I-34136 Trieste (Italy); SISSA and INFN, Sezione di Trieste, Via Bonomea 265, I-34136 Trieste (Italy)

2016-08-15

We consider the Kondo effect in Y-junctions of anisotropic XY models in an applied magnetic field along the critical lines characterized by a gapless excitation spectrum. We find that, while the boundary interaction Hamiltonian describing the junction can be recasted in the form of a four-channel, spin-1/2 antiferromagnetic Kondo Hamiltonian, the number of channels effectively participating in the Kondo effect depends on the chain parameters, as well as on the boundary couplings at the junction. The system evolves from an effective four-channel topological Kondo effect for a junction of XX-chains with symmetric boundary couplings into a two-channel one at a junction of three quantum critical Ising chains. The effective number of Kondo channels depends on the properties of the boundary and of the bulk. The XX-line is a “critical” line, where a four-channel topological Kondo effect can be recovered by fine-tuning the boundary parameter, while along the line in parameter space connecting the XX-line and the critical Ising point the junction is effectively equivalent to a two-channel topological Kondo Hamiltonian. Using a renormalization group approach, we determine the flow of the boundary couplings, which allows us to define and estimate the critical couplings and Kondo temperatures of the different Kondo (pair) channels. Finally, we study the local transverse magnetization in the center of the Y-junction, eventually arguing that it provides an effective tool to monitor the onset of the two-channel Kondo effect.

From four- to two-channel Kondo effect in junctions of XY spin chains

International Nuclear Information System (INIS)

Giuliano, Domenico; Sodano, Pasquale; Tagliacozzo, Arturo; Trombettoni, Andrea

2016-01-01

We consider the Kondo effect in Y-junctions of anisotropic XY models in an applied magnetic field along the critical lines characterized by a gapless excitation spectrum. We find that, while the boundary interaction Hamiltonian describing the junction can be recasted in the form of a four-channel, spin-1/2 antiferromagnetic Kondo Hamiltonian, the number of channels effectively participating in the Kondo effect depends on the chain parameters, as well as on the boundary couplings at the junction. The system evolves from an effective four-channel topological Kondo effect for a junction of XX-chains with symmetric boundary couplings into a two-channel one at a junction of three quantum critical Ising chains. The effective number of Kondo channels depends on the properties of the boundary and of the bulk. The XX-line is a “critical” line, where a four-channel topological Kondo effect can be recovered by fine-tuning the boundary parameter, while along the line in parameter space connecting the XX-line and the critical Ising point the junction is effectively equivalent to a two-channel topological Kondo Hamiltonian. Using a renormalization group approach, we determine the flow of the boundary couplings, which allows us to define and estimate the critical couplings and Kondo temperatures of the different Kondo (pair) channels. Finally, we study the local transverse magnetization in the center of the Y-junction, eventually arguing that it provides an effective tool to monitor the onset of the two-channel Kondo effect.

Optically induced bistable states in metal/tunnel-oxide/semiconductor /MTOS/ junctions

Science.gov (United States)

Lai, S. K.; Dressendorfer, P. V.; Ma, T. P.; Barker, R. C.

1981-01-01

A new switching phenomenon in metal-oxide semiconductor tunnel junction has been discovered. With a sufficiently large negative bias applied to the electrode, incident visible light of intensity greater than about 1 microW/sq cm causes the reverse-biased junction to switch from a low-current to a high-current state. It is believed that hot-electron-induced impact ionization provides the positive feedback necessary for switching, and causes the junction to remain in its high-current state after the optical excitation is removed. The junction may be switched back to the low-current state electrically. The basic junction characteristics have been measured, and a simple model for the switching phenomenon has been developed.

Chaotic Dynamics of a Josephson Junction with a Ratchet Potential and Current-Modulating Damping

Science.gov (United States)

Li, Fei; Li, Wenwu; Xu, Lan

2018-04-01

The chaotic dynamics of a Josephson junction with a ratchet potential and current-modulating damping are studied. Under the first-order approximation, we construct the general solution of the first-order equation whose boundedness condition contains the famous Melnikov chaotic criterion. Based on the general solution, the incomputability and unpredictability of the system's chaotic behavior are discussed. For the case beyond perturbation conditions, the evolution of stroboscopic Poincaré sections shows that the system undergoes a quasi-periodic transition to chaos with an increasing intensity of the rf-current. Through a suitable feedback controlling strategy, the chaos can be effectively suppressed and the intensity of the controller can vary in a large range. It is also found that the current between the two separated superconductors increases monotonously in some specific parameter spaces.

Model for the resistive critical current transition in composite superconductors

International Nuclear Information System (INIS)

Warnes, W.H.

1988-01-01

Much of the research investigating technological type-II superconducting composites relies on the measurement of the resistive critical current transition. We have developed a model for the resistive transition which improves on older models by allowing for the very different nature of monofilamentary and multifilamentary composite structures. The monofilamentary model allows for axial current flow around critical current weak links in the superconducting filament. The multifilamentary model incorporates an additional radial current transfer between neighboring filaments. The development of both models is presented. It is shown that the models are useful for extracting more information from the experimental data than was formerly possible. Specific information obtainable from the experimental voltage-current characteristic includes the distribution of critical currents in the composite, the average critical current of the distribution, the range of critical currents in the composite, the field and temperature dependence of the distribution, and the fraction of the composite dissipating energy in flux flow at any current. This additional information about the distribution of critical currents may be helpful in leading toward a better understanding of flux pinning in technological superconductors. Comparison of the models with several experiments is given and shown to be in reasonable agreement. Implications of the models for the measurement of critical currents in technological composites is presented and discussed with reference to basic flux pinning studies in such composites

The critical current of superconductors: an historical review

International Nuclear Information System (INIS)

Dew-Hughes, D.

2001-01-01

The most important practical characteristic of a superconductor is its critical current density. This article traces the history, both of the experimental discoveries and of the development of the theoretical ideas that have lead to the understanding of those factors that control critical current densities. These include Silsbee's hypothesis, the Meissner effect, London, Ginsburg-Landau and Abrikosov theories, flux pinning and the critical state, and the control of texture in high temperature superconductors

Macroscopic quantum tunneling in Josephson tunnel junctions and Coulomb blockade in single small tunnel junctions

International Nuclear Information System (INIS)

Cleland, A.N.

1991-01-01

Experiments investigated the process of macroscopic quantum tunneling in a moderately-damped, resistively shunted, Josephson junction are described, followed by a discussion of experiments performed on very-small-capacitance normal-metal tunnel junctions. The experiments on the resistively-shunted Josephson junction were designed to investigate a quantum process, that of the tunneling of the Josephson-phase variable under a potential barrier, in a system in which dissipation plays a major role in the dynamics of motion. All the parameters of the junction were measured using the classical phenomena of thermal activation and resonant activation. Theoretical predictions are compared with the experimental results, showing good agreement with no adjustable parameters. The experiments on small-capacitance tunnel junctions extend the measurements on the large-area Josephson junctions from the region in which the phase variable has a fairly well-defined value, i.e. its wave function has a narrow width, to the region where its value is almost completely unknown. The charge on the junction becomes well-defined and is predicted to quantize the current through the junction, giving rise to the Coulomb blockade at low bias

The role of apical cell-cell junctions and associated cytoskeleton in mechanotransduction.

Science.gov (United States)

Sluysmans, Sophie; Vasileva, Ekaterina; Spadaro, Domenica; Shah, Jimit; Rouaud, Florian; Citi, Sandra

2017-04-01

Tissues of multicellular organisms are characterised by several types of specialised cell-cell junctions. In vertebrate epithelia and endothelia, tight and adherens junctions (AJ) play critical roles in barrier and adhesion functions, and are connected to the actin and microtubule cytoskeletons. The interaction between junctions and the cytoskeleton is crucial for tissue development and physiology, and is involved in the molecular mechanisms governing cell shape, motility, growth and signalling. The machineries which functionally connect tight and AJ to the cytoskeleton comprise proteins which either bind directly to cytoskeletal filaments, or function as adaptors for regulators of the assembly and function of the cytoskeleton. In the last two decades, specific cytoskeleton-associated junctional molecules have been implicated in mechanotransduction, revealing the existence of multimolecular complexes that can sense mechanical cues and translate them into adaptation to tensile forces and biochemical signals. Here, we summarise the current knowledge about the machineries that link tight and AJ to actin filaments and microtubules, and the molecular basis for mechanotransduction at epithelial and endothelial AJ. © 2017 Société Française des Microscopies and Société de Biologie Cellulaire de France. Published by John Wiley & Sons Ltd.

Pronounced Environmental Effects on Injection Currents in EGaIn Tunneling Junctions Comprising Self-Assembled Monolayers.

Science.gov (United States)

Carlotti, Marco; Degen, Maarten; Zhang, Yanxi; Chiechi, Ryan C

2016-09-15

Large-area tunneling junctions using eutectic Ga-In (EGaIn) as a top contact have proven to be a robust, reproducible, and technologically relevant platform for molecular electronics. Thus far, the majority of studies have focused on saturated molecules with backbones consisting mainly of alkanes in which the frontier orbitals are either highly localized or energetically inaccessible. We show that self-assembled monolayers of wire-like oligophenyleneethynylenes (OPEs), which are fully conjugated, only exhibit length-dependent tunneling behavior in a low-O 2 environment. We attribute this unexpected behavior to the sensitivity of injection current on environment. We conclude that, contrary to previous reports, the self-limiting layer of Ga 2 O 3 strongly influences transport properties and that the effect is related to the wetting behavior of the electrode. This result sheds light on the nature of the electrode-molecule interface and suggests that adhesive forces play a significant role in tunneling charge-transport in large-area molecular junctions.

From four- to two-channel Kondo effect in junctions of XY spin chains

Directory of Open Access Journals (Sweden)

Domenico Giuliano

2016-08-01

Full Text Available We consider the Kondo effect in Y-junctions of anisotropic XY models in an applied magnetic field along the critical lines characterized by a gapless excitation spectrum. We find that, while the boundary interaction Hamiltonian describing the junction can be recasted in the form of a four-channel, spin-1/2 antiferromagnetic Kondo Hamiltonian, the number of channels effectively participating in the Kondo effect depends on the chain parameters, as well as on the boundary couplings at the junction. The system evolves from an effective four-channel topological Kondo effect for a junction of XX-chains with symmetric boundary couplings into a two-channel one at a junction of three quantum critical Ising chains. The effective number of Kondo channels depends on the properties of the boundary and of the bulk. The XX-line is a “critical” line, where a four-channel topological Kondo effect can be recovered by fine-tuning the boundary parameter, while along the line in parameter space connecting the XX-line and the critical Ising point the junction is effectively equivalent to a two-channel topological Kondo Hamiltonian. Using a renormalization group approach, we determine the flow of the boundary couplings, which allows us to define and estimate the critical couplings and Kondo temperatures of the different Kondo (pair channels. Finally, we study the local transverse magnetization in the center of the Y-junction, eventually arguing that it provides an effective tool to monitor the onset of the two-channel Kondo effect.

RF assisted switching in magnetic Josephson junctions

Science.gov (United States)

Caruso, R.; Massarotti, D.; Bolginov, V. V.; Ben Hamida, A.; Karelina, L. N.; Miano, A.; Vernik, I. V.; Tafuri, F.; Ryazanov, V. V.; Mukhanov, O. A.; Pepe, G. P.

2018-04-01

We test the effect of an external RF field on the switching processes of magnetic Josephson junctions (MJJs) suitable for the realization of fast, scalable cryogenic memories compatible with Single Flux Quantum logic. We show that the combined application of microwaves and magnetic field pulses can improve the performances of the device, increasing the separation between the critical current levels corresponding to logical "0" and "1." The enhancement of the current level separation can be as high as 80% using an optimal set of parameters. We demonstrate that external RF fields can be used as an additional tool to manipulate the memory states, and we expect that this approach may lead to the development of new methods of selecting MJJs and manipulating their states in memory arrays for various applications.

Macroscopic quantum tunneling in Josephson tunnel junctions and Coulomb blockade in single small tunnel junctions

International Nuclear Information System (INIS)

Cleland, A.N.

1991-04-01

Experiments investigating the process of macroscopic quantum tunneling in a moderately-damped, resistively shunted, Josephson junction are described, followed by a discussion of experiments performed on very small capacitance normal-metal tunnel junctions. The experiments on the resistively-shunted Josephson junction were designed to investigate a quantum process, that of the tunneling of the Josephson phase variable under a potential barrier, in a system in which dissipation plays a major role in the dynamics of motion. All the parameters of the junction were measured using the classical phenomena of thermal activation and resonant activation. Theoretical predictions are compared with the experimental results, showing good agreement with no adjustable parameters; the tunneling rate in the moderately damped (Q ∼ 1) junction is seen to be reduced by a factor of 300 from that predicted for an undamped junction. The phase is seen to be a good quantum-mechanical variable. The experiments on small capacitance tunnel junctions extend the measurements on the larger-area Josephson junctions from the region in which the phase variable has a fairly well-defined value, i.e. its wavefunction has a narrow width, to the region where its value is almost completely unknown. The charge on the junction becomes well-defined and is predicted to quantize the current through the junction, giving rise to the Coulomb blockade at low bias. I present the first clear observation of the Coulomb blockade in single junctions. The electrical environment of the tunnel junction, however, strongly affects the behavior of the junction: higher resistance leads are observed to greatly sharpen the Coulomb blockade over that seen with lower resistance leads. I present theoretical descriptions of how the environment influences the junctions; comparisons with the experimental results are in reasonable agreement

The cranial-spinal junction in medulloblastoma: does it matter?

International Nuclear Information System (INIS)

Narayana, Ashwatha; Jeswani, Sam; Paulino, Arnold C.

1999-01-01

Purpose: Late effects of treatment in children and young adults with medulloblastoma can be influenced by the technique employed in radiating the craniospinal axis. The purpose of this study is to determine whether the placement of the cranial-spinal junction has an impact on dose to the cervical spinal cord and surrounding organs. Methods and Materials: Five patients underwent computed tomography (CT) simulation in the prone position for craniospinal irradiation. A dose of 36 Gy was prescribed to the entire neuraxis. The doses to the cervical spinal cord and surrounding organs were calculated using a cranial-spinal junction at the C1-C2 vertebral interspace (high junction) or at the lowest point in the neck, with exclusion of the shoulders in the lateral cranial fields (low junction).The volume of critical organs at risk, as well as dose to these structures using the cranial and spinal field(s) were outlined and calculated using the CMS FOCUS 3-dimensional treatment planning system. Results: The average dose to the cervical spinal cord was 11.9% higher than the prescribed dose with the low junction, and 6.7% higher with the high junction. However, doses to the thyroid gland, mandible, pharynx, and larynx were increased by an average of 29.6%, 75.8%, 70.6%, and 227.7%, respectively, by the use of the high junction compared to the low junction. Conclusion: A higher dose to the cervical spinal cord can be minimized by using a high junction. However, this would be at the cost of substantially increased doses to surrounding organs such as the thyroid gland, mandible, pharynx, and larynx. This can be critical in children and young adults, where hypothyroidism, mandibular hypoplasia, and development of second malignancies may be a late sequela of radiation therapy

Response of YBa2Cu3O7-δ grain-boundary junctions to short light pulses

International Nuclear Information System (INIS)

Kaplan, S.B.; Chi, C.C.; Chaudhari, P.; Dimos, D.; Gross, R.; Gupta, A.; Koren, G.

1991-01-01

The electrical response of a single YBa 2 Cu 3 O 7-δ grain-boundary junction to visible light pulses was measured. Using an autocorrelation technique with picosecond laser pulses, no fast voltage transients were observed with the junction biased just above its critical current. Apparently, there are no relaxation times in the range of 7 ps to 14 ns. Using direct time-domain measurement with nanosecond pulses, three types of junction response were recorded: a nonexponential decay of 11 μs (90 to 10 % time) at temperatures near T c ; an inverse-time dependence of the order of 0.3 μs (100 to 50 % time) in the temperature range of 4.2 to 15 K; and an exponential decay time of 0.15 μs with the sample immersed in superfluid helium

Correlation of superconductor strand, cable, and dipole critical currents in CBA magnets

International Nuclear Information System (INIS)

Tannenbaum, M.J.; Garber, M.; Sampson, W.B.

1982-01-01

A calibration between vendor critical current data for 0.0268'' diameter superconductor strand supplied to Fermilab, and the BNL 10 -12 Ωcm critical current specification is presented. Vendor critical current data for over 400 Fermilab type billets are shown, both as supplied by the vendor and converted to BNL units. Predictions of cable critical current are made using the sum of the critical currents of the 23 strands, where all strands from the same half billet are assigned the same critical current. The measured critical current shows excellent correlation to the predicted value and is approximately 14 +- 2 percent below it. Colliding Beam Accelerator (CBA) full length dipoles reach the conductor critical current limit, essentially without training. Magnet performance is predictable from the measured critical current of a short sample of cable to within 2%

Soliton excitations in Josephson tunnel junctions

DEFF Research Database (Denmark)

Lomdahl, P. S.; Sørensen, O. H.; Christiansen, Peter Leth

1982-01-01

A detailed numerical study of a sine-Gordon model of the Josephson tunnel junction is compared with experimental measurements on junctions with different L / λJ ratios. The soliton picture is found to apply well on both relatively long (L / λJ=6) and intermediate (L / λJ=2) junctions. We find good...... agreement for the current-voltage characteristics, power output, and for the shape and height of the zero-field steps (ZFS). Two distinct modes of soliton oscillations are observed: (i) a bunched or congealed mode giving rise to the fundamental frequency f1 on all ZFS's and (ii) a "symmetric" mode which...... on the Nth ZFS yields the frequency Nf1 Coexistence of two adjacent frequencies is found on the third ZFS of the longer junction (L / λJ=6) in a narrow range of bias current as also found in the experiments. Small asymmetries in the experimental environment, a weak magnetic field, e.g., is introduced via...

Improving ion irradiated high Tc Josephson junctions by annealing: The role of vacancy-interstitial annihilation

International Nuclear Information System (INIS)

Sirena, M.; Matzen, S.; Bergeal, N.; Lesueur, J.; Faini, G.; Bernard, R.; Briatico, J.; Crete, D. G.

2007-01-01

The authors have studied the annealing effect in the transport properties of high T c Josephson junctions (JJs) made by ion irradiation. Low temperature annealing (80 deg. C) increases the JJ coupling temperature (T J ) and the I c R n product, where I c is the critical current and R n the normal resistance. They have found that the spread in JJ characteristics can be reduced by sufficient long annealing times, increasing the reproducibility of ion irradiated Josephson junctions. The characteristic annealing time and the evolution of the spread in the JJ characteristics can be explained by a vacancy-interstitial annihilation process rather than by an oxygen diffusion one

Ultrafast demagnetization enhancement in CoFeB/MgO/CoFeB magnetic tunneling junction driven by spin tunneling current.

Science.gov (United States)

He, Wei; Zhu, Tao; Zhang, Xiang-Qun; Yang, Hai-Tao; Cheng, Zhao-Hua

2013-10-07

The laser-induced ultrafast demagnetization of CoFeB/MgO/CoFeB magnetic tunneling junction is exploited by time-resolved magneto-optical Kerr effect (TRMOKE) for both the parallel state (P state) and the antiparallel state (AP state) of the magnetizations between two magnetic layers. It was observed that the demagnetization time is shorter and the magnitude of demagnetization is larger in the AP state than those in the P state. These behaviors are attributed to the ultrafast spin transfer between two CoFeB layers via the tunneling of hot electrons through the MgO barrier. Our observation indicates that ultrafast demagnetization can be engineered by the hot electrons tunneling current. It opens the door to manipulate the ultrafast spin current in magnetic tunneling junctions.

Variation of local critical current and its influence on overall current of bent multifilamentary Bi2223/Ag tape

International Nuclear Information System (INIS)

Ochiai, S.; Doko, D.; Rokkaku, H.; Fujimoto, M.; Okuda, H.; Hojo, M.; Tanaka, M.; Sugano, M.; Osamura, K.; Mimura, M.

2006-01-01

The correlation between the local and overall currents in a multifilamentary Bi2223/Ag/Ag alloy composite tape under bending strain was studied. The correlation of the measured distributed local critical current and n-value to overall critical current was described comprehensively with a voltage summation model that regards the overall sample to be composed of a series circuit. The analysis of the measured critical current and n-value revealed that the distribution of local critical current could be described with the Weibull distribution function and the n-value could be expressed as a function of critical current as a first approximation. By combining the Weibull distribution function of the local critical current, the empirical formula of the n-value as a function of critical current, voltage summation model and Monte Carlo method, the overall current and n-value could be predicted fairly well from those of local elements

Fluctuation in Interface and Electronic Structure of Single-Molecule Junctions Investigated by Current versus Bias Voltage Characteristics.

Science.gov (United States)

Isshiki, Yuji; Fujii, Shintaro; Nishino, Tomoaki; Kiguchi, Manabu

2018-03-14

Structural and electronic detail at the metal-molecule interface has a significant impact on the charge transport across the molecular junctions, but its precise understanding and control still remain elusive. On the single-molecule scale, the metal-molecule interface structures and relevant charge transport properties are subject to fluctuation, which contain the fundamental science of single-molecule transport and implication for manipulability of the transport properties in electronic devices. Here, we present a comprehensive approach to investigate the fluctuation in the metal-molecule interface in single-molecule junctions, based on current-voltage ( I- V) measurements in combination with first-principles simulation. Contrary to conventional molecular conductance studies, this I- V approach provides a correlated statistical description of both the degree of electronic coupling across the metal-molecule interface and the molecular orbital energy level. This statistical approach was employed to study fluctuation in single-molecule junctions of 1,4-butanediamine (DAB), pyrazine (PY), 4,4'-bipyridine (BPY), and fullerene (C 60 ). We demonstrate that molecular-dependent fluctuation of σ-, π-, and π-plane-type interfaces can be captured by analyzing the molecular orbital (MO) energy level under mechanical perturbation. While the MO level of DAB with the σ-type interface shows weak distance dependence and fluctuation, the MO level of PY, BPY, and C 60 features unique distance dependence and molecular-dependent fluctuation against the mechanical perturbation. The MO level of PY and BPY with the σ+π-type interface increases with the increase in the stretch distance. In contrast, the MO level of C 60 with the π-plane-type interface decreases with the increase in the stretching perturbation. This study provides an approach to resolve the structural and electronic fluctuation in the single-molecule junctions and insight into the molecular-dependent fluctuation in

Method of manufacturing Josephson junction integrated circuits

International Nuclear Information System (INIS)

Jillie, D.W. Jr.; Smith, L.N.

1985-01-01

Josephson junction integrated circuits of the current injection type and magnetically controlled type utilize a superconductive layer that forms both Josephson junction electrode for the Josephson junction devices on the integrated circuit as well as a ground plane for the integrated circuit. Large area Josephson junctions are utilized for effecting contact to lower superconductive layers and islands are formed in superconductive layers to provide isolation between the groudplane function and the Josephson junction electrode function as well as to effect crossovers. A superconductor-barrier-superconductor trilayer patterned by local anodization is also utilized with additional layers formed thereover. Methods of manufacturing the embodiments of the invention are disclosed

Low-frequency noise in high-(Tc) superconductor Josephson junctions, SQUIDs, and magnetometers

Science.gov (United States)

Miklich, A. H.

1994-05-01

Design and performance of high-T(sub c) dc superconducting quantum interference devices (SQUID's), junctions that comprise them, and magnetometers made from them are described, with attention to sources of 1/f noise. Biepitaxial junctions are found to have large levels of critical current fluctuations which make them unsuitable for low-noise SQUID's; this suggests a poorly connected interface at the grain boundary junction. SQUID's from bicrystal junctions have levels of critical current noise controllable using bias current reversal techniques which leave the noise white down to frequencies of a few Hz. A SQUID with an energy resolution of 1.5 x 10(exp -30) J Hz(exp -1) at 1 Hz is reported. Magnetometers in which a (9 mm)(exp 2) pickup loop is directly coupled to a SQUID body have achieved field resolutions of 93 fT Hz(exp -1/2) down to frequencies below 1 Hz, improving to 39 fT Hz(exp -1/2) at 1 Hz with the addition of a 50mm-diameter single-turn flux transformer. Poor coupling to pickup loop makes it difficult to satisfy competing goals of high field resolution and small detector size necessary for multichannel biomagnetic imaging. Improved coupling is demonstrated by the use of multiturn-input-coil flux transformers, and a resolution of 35 fT Hz(exp -1/2) in the white noise region is reported with a (10 mm)(exp 2) pickup loop. However, additional 1/f noise from processed multilayer structures in the transformer limits the resolution at 1 Hz to 114 fT Hz(exp -1/2). High-T(sub c) SQUID's exhibit additional 1/f noise when cooled in a nonzero static magnetic field because of additional flux vortices trapped in the film, with the noise power at 1 Hz typically increasing by a factor of 10-20 in a field of 0.05mT (0.5 G). Finally, a SQUID-based voltmeter with a resolution of 9.2 pV Hz(exp -1/2) at 10 Hz (24 pV Hz(exp -1/2) at 1 Hz) is described.

Low-Frequency Noise in High-T Superconductor Josephson Junctions, Squids, and Magnetometers.

Science.gov (United States)

Miklich, Andrew Hostetler

The design and performance of high-T_ {rm c} dc superconducting quantum interference devices (SQUIDs), the junctions that comprise them, and magnetometers made from them are described, with special attention paid to sources of 1/f noise. Biepitaxial junctions are found to have large levels of critical current fluctuations which make them unsuitable for low-noise SQUIDs. This noise suggests a poorly connected interface at the grain boundary junction. SQUIDs from bicrystal junctions, in contrast, have levels of critical current noise that are controllable using bias current reversal techniques which leave the noise white down to frequencies of a few Hz. A SQUID with an energy resolution of 1.5times 10^{-30} J Hz^ {-1} at 1 Hz is reported. Magnetometers in which a (9 mm)^2 pickup loop is directly coupled to a SQUID body have achieved field resolutions of 93 fT Hz^{-1/2} down to frequencies below 1 Hz, improving to 39 fT Hz^{-1/2} at 1 Hz with the addition of a 50 mm-diameter single-turn flux transformer. Although the performance of these devices is sufficient for single -channel biomagnetometry or geophysical studies, their relatively poor coupling to the pickup loop makes it difficult to satisfy the competing goals of high field resolution and small detector size necessary for multichannel biomagnetic imaging. Improved coupling is demonstrated by the use of multiturn-input-coil flux transformers, and a resolution of 35 fT Hz^{-1/2} in the white noise region is reported with a (10 mm) ^2 pickup loop. However, additional 1/f noise from the processed multilayer structures in the transformer limits the resolution at 1 Hz to 114 fT Hz^ {-1/2}. High-T_{ rm c} SQUIDs are shown to exhibit additional 1/f noise when they are cooled in a nonzero static magnetic field because of the additional flux vortices trapped in the film, with the noise power at 1 Hz typically increasing by a factor of 10-20 in a field of 0.05 mT (0.5 G). Finally, a SQUID-based voltmeter with a resolution

Modeling Bloch oscillations in ultra-small Josephson junctions

Science.gov (United States)

Vora, Heli; Kautz, Richard; Nam, Sae Woo; Aumentado, Jose

In a seminal paper, Likharev et al. developed a theory for ultra-small Josephson junctions with Josephson coupling energy (Ej) less than the charging energy (Ec) and showed that such junctions demonstrate Bloch oscillations which could be used to make a fundamental current standard that is a dual of the Josephson volt standard. Here, based on the model of Geigenmüller and Schön, we numerically calculate the current-voltage relationship of such an ultra-small junction which includes various error processes present in a nanoscale Josephson junction such as random quasiparticle tunneling events and Zener tunneling between bands. This model allows us to explore the parameter space to see the effect of each process on the width and height of the Bloch step and serves as a guide to determine whether it is possible to build a quantum current standard of a metrological precision using Bloch oscillations.

Stability of fluxon motion in long Josephson junctions at high bias

DEFF Research Database (Denmark)

Pagano, S.; Sørensen, Mads Peter; Christiansen, Peter Leth

1988-01-01

In long Josephson junctions the motion of fluxons is revealed by the existence of current steps, zero-field steps, in the current-voltage characteristics. In this paper we investigate the stability of the fluxon motion when high values of the current bias are involved. The investigation is carried...... dissipations and of the junction length on the switching-current value is investigated. A simple boundary model is able to describe, for junctions of overlap geometry, the qualitative dependence of the switching current on the system parameters....

Critical current studies of a HTS rectangular coil

Energy Technology Data Exchange (ETDEWEB)

Zhong, Z. [Department of Engineering, University of Cambridge (United Kingdom); Chudy, M., E-mail: Michal.chudy@stuba.sk [Graduate School of Technology Management, University of Pretoria (South Africa); Institute of Power and Applied Electrical Engineering, Slovak University of Technology in Bratislava (Slovakia); Ruiz, H.S. [Department of Engineering, University of Leicester, Leicester LE1 7RH (United Kingdom); Zhang, X.; Coombs, T. [Department of Engineering, University of Cambridge (United Kingdom)

2017-05-15

Highlights: • Unique square pancake coil was manufactured. • Measurements in relatively high magnetic field were performed. • Different sections of the coil were characterized. • Parts of the coil which are limiting critical current were identified. - Abstract: Nowadays, superconducting high field magnets are used in numerous applications due to their superior properties. High temperature superconductors (HTS) are usually used for production of circular pancake or racetrack coils. However different geometries of HTS coils might be required for some specific applications. In this study, the HTS coil wound on a rectangular frame was fully characterized in homogeneous DC background field. The study contains measurements of critical current angular dependencies. The critical current of the entire coil and two selected strands under different magnitudes and orientations of external magnetic fields are measured. The critical regions of the coil in different angular regimes are determined. This study brings better understanding of the in- field performance of HTS coils wound on frames with right-angles.

Analytical description of ballistic spin currents and torques in magnetic tunnel junctions

KAUST Repository

Chshiev, M.

2015-09-21

In this work we demonstrate explicit analytical expressions for both charge and spin currents which constitute the 2×2 spinor in magnetic tunnel junctions with noncollinear magnetizations under applied voltage. The calculations have been performed within the free electron model in the framework of the Keldysh formalism and WKB approximation. We demonstrate that spin/charge currents and spin transfer torques are all explicitly expressed through only three irreducible quantities, without further approximations. The conditions and mechanisms of deviation from the conventional sine angular dependence of both spin currents and torques are shown and discussed. It is shown in the thick barrier approximation that all tunneling transport quantities can be expressed in an extremely simplified form via Slonczewski spin polarizations and our effective spin averaged interfacial transmission probabilities and effective out-of-plane polarizations at both interfaces. It is proven that the latter plays a key role in the emergence of perpendicular spin torque as well as in the angular dependence character of all spin and charge transport considered. It is demonstrated directly also that for any applied voltage, the parallel component of spin current at the FM/I interface is expressed via collinear longitudinal spin current components. Finally, spin transfer torque behavior is analyzed in a view of transverse characteristic length scales for spin transport.

Coherent Charge Transport in Ballistic InSb Nanowire Josephson Junctions

Science.gov (United States)

Li, S.; Kang, N.; Fan, D. X.; Wang, L. B.; Huang, Y. Q.; Caroff, P.; Xu, H. Q.

2016-01-01

Hybrid InSb nanowire-superconductor devices are promising for investigating Majorana modes and topological quantum computation in solid-state devices. An experimental realisation of ballistic, phase-coherent superconductor-nanowire hybrid devices is a necessary step towards engineering topological superconducting electronics. Here, we report on a low-temperature transport study of Josephson junction devices fabricated from InSb nanowires grown by molecular-beam epitaxy and provide a clear evidence for phase-coherent, ballistic charge transport through the nanowires in the junctions. We demonstrate that our devices show gate-tunable proximity-induced supercurrent and clear signatures of multiple Andreev reflections in the differential conductance, indicating phase-coherent transport within the junctions. We also observe periodic modulations of the critical current that can be associated with the Fabry-Pérot interference in the nanowires in the ballistic transport regime. Our work shows that the InSb nanowires grown by molecular-beam epitaxy are of excellent material quality and hybrid superconducting devices made from these nanowires are highly desirable for investigation of the novel physics in topological states of matter and for applications in topological quantum electronics. PMID:27102689

Josephson effect in SIFS junctions at arbitrary scattering

International Nuclear Information System (INIS)

Pugach, N. G.; Kupriyanov, M. Yu.; Goldobin, E.; Koelle, D.; Kleiner, R.

2011-01-01

Full text: The interplay between dirty and clean limits in Superconductor-Ferromagnet-Superconductor (SFS) Josephson junctions is a subject of intensive theoretical studies. SIFS junctions, containing an additional insulator (I) barrier are interesting as potential logic elements in superconducting circuits, since their critical current I c can be tuned over a wide range, still keeping a high I c R N product, where R N is the normal resistance of the junction. They are also a convenient model system for a comparative study of the 0-π transitions for arbitrary relations between characteristic lengths of the F-layer: the layer thickness d, the mean free path l, the magnetic length ξ H =v F /2H, and the nonmagnetic coherence length ξ 0 =v F /2πT, where v F is the Fermi velocity, H is the exchange magnetic energy, and T is the temperature. The spatial variations of the order parameter are described by the complex coherent length in the ferromagnet ξ F -1 = ξ 1 -1 + iξ 2 -1 . It is well known, that in the dirty limit (l 1,2 ) described by the Usadel equations both ξ 1 2 = ξ 2 2 = v F l/3H. In this work the spatial distribution of the anomalous Green's functions and the Josephson current in the SIFS junction are calculated. The linearized Eilenberger equations are solved together with the Zaitsev boundary conditions. This allows comparing the dirty and the clean limits, investigating a moderate disorder, and establishing the applicability limits of the Usadel equations for such structures. We demonstrate that for an arbitrary relation between l, ξ H , and d the spatial distribution of the anomalous Green's function can be approximated by a single exponent with reasonable accuracy, and we find its effective decay length and oscillation period for several values of ξ H , l and d. The role of different types of the FS interface is analyzed. The applicability range of the Usadel equation is established. The results of calculations have been applied to the

Experiments on a Quantum Gate Based on Charge-Current Superconducting Qubit

National Research Council Canada - National Science Library

Devoret, Michel H

2005-01-01

.... When the amplitude of the RF drive is in the vicinity of the bifurcation points a small change in the effective critical current of the junction is amplified into a large phase change in the reflected signal...

Superconductor-normal metal-superconductor process development for the fabrication of small Josephson junctions in ramp type configuration

International Nuclear Information System (INIS)

Poepel, R.; Hagedorn, D.; Weimann, T.; Buchholz, F.-I.; Niemeyer, J.

2000-01-01

At PTB, a fabrication process has been developed in SNS Nb/PdAu/Nb technology for the verification of small Josephson junctions (JJs) in the deep sub-micron range to enable the implementation of JJs as active elements in highly integrated superconducting circuits. Two steps of this technological development are described with regard to appropriately designed circuit layouts of JJ series arrays (JJAs), the first one in a conventional window type junction (WTJ) configuration and the second one in a ramp type junction (RTJ) configuration. Test circuits of JJAs containing up to 10 000 JJs have been fabricated and experimentally tested. In WTJ configuration, the circuits proved to be sensitive to external perturbing effects affecting the stability of circuit operation. In contrast to that, in RTJ configuration, the circuits realized showed correct function and a high grade of reliability of operation. To produce RTJ circuits, the technology parameters have been set to realize JJs with contact areas of A=0.25μmx1.3μm. At a thickness of the PdAu normal metal layer of d = 40 nm, the values achieved for the critical current density and for the product of critical current and normal state resistance are about j c = 200 k Acm -2 and about I c R N = 21 μV. (author)

Microstructures and critical currents in high-Tc superconductors

International Nuclear Information System (INIS)

Suenaga, Masaki

1998-01-01

Microstructural defects are the primary determining factors for the values of critical-current densities in a high T c superconductor after the electronic anisotropy along the a-b plane and the c-direction. A review is made to assess firstly what would be the maximum achievable critical-current density in YBa 2 Cu 3 O 7 if nearly ideal pinning sites were introduced and secondly what types of pinning defects are currently introduced or exist in YBa 2 Cu 3 O 7 and how effective are these in pinning vortices

Transverse phase-locking in fully frustrated Josephson junction arrays: A new type of fractional giant steps

International Nuclear Information System (INIS)

Marconi, Veronica I.; Kolton, Alejandro B.; Dominguez, Daniel; Gronbech-Jensen, Niels

2003-05-01

We study, analytically and numerically, phase locking of driven vortex lattices in fully-frustrated Josephson junction arrays at zero temperature. We consider the case when an ac current is applied perpendicular to a dc current. We observe phase locking, steps in the current-voltage characteristics, with a dependence on external ac-drive amplitude and frequency qualitatively different from the Shapiro steps, observed when the ac and dc currents are applied in parallel. Further, the critical current increases with increasing transverse ac-drive amplitude, while it decreases for longitudinal ac-drive. The critical current and the phase-locked current step width, increase quadratically with (small) amplitudes of the ac-drive. For larger amplitudes of the transverse ac-signal, we find windows where the critical current is hysteretic, and windows where phase locking is suppressed due to dynamical instabilities. We characterize the dynamical states around the phase-locking interference condition in the IV curve with voltage noise, Lyapunov exponents and Poincare sections. We find that zero temperature phase-locking behavior in large fully frustrated arrays is well described by an effective four plaquette model. (author)

R.f.-induced steps in mutually coupled, two-dimensional distributed Josephson tunnel junctions

International Nuclear Information System (INIS)

Klein, U.; Dammschneider, P.

1991-01-01

This paper reports on the amplitudes of the current steps in the I-V characteristics of mutually coupled two-dimensional distributed Josephson tunnel junctions driven by microwaves. For this purpose we use a numerical computation algorithm based on a planar resonator model for the individual Josephson tunnel junctions to calculate the d.c. current density distribution. In addition to the fundamental microwave frequency, harmonic contents of the tunneling current are also considered. The lateral dimensions of the individual junctions are small compared to the microwave wavelength and the Josephson penetration depth, giving an almost constant current density distribution. Therefore, the coupled junctions can give much greater step amplitudes than a single junction with an equal tunneling area, because of their nonuniform current density distribution

Spatially resolved detection of mutually locked Josephson junctions in arrays

International Nuclear Information System (INIS)

Keck, M.; Doderer, T.; Huebener, R.P.; Traeuble, T.; Dolata, R.; Weimann, T.; Niemeyer, J.

1997-01-01

Mutual locking due to the internal coupling in two-dimensional arrays of Josephson junctions was investigated. The appearance of Shapiro steps in the current versus voltage curve of a coupled on-chip detector junction is used to indicate coherent oscillations in the array. A highly coherent state is observed for some range of the array bias current. By scanning the array with a low-power electron beam, mutually locked junctions remain locked while the unlocked junctions generate a beam-induced additional voltage drop at the array. This imaging technique allows the detection of the nonlocked or weakly locked Josephson junctions in a (partially) locked array state. copyright 1997 American Institute of Physics

Changes of junctions of endothelial cells in coronary sclerosis: A review

Directory of Open Access Journals (Sweden)

Li-Zi Zhang

2016-03-01

Full Text Available Atherosclerosis, the major cause of cardiovascular diseases, has been a leading contributor to morbidity and mortality in the United States and it has been on the rise globally. Endothelial cell–cell junctions are critical for vascular integrity and maintenance of vascular function. Endothelial cell junctions dysfunction is the onset step of future coronary events and coronary artery disease. Keywords: Coronary atherosclerosis, Junctions, Endothelial cells

Dynamics of fractional vortices in long Josephson junctions

International Nuclear Information System (INIS)

Gaber, Tobias

2007-01-01

In this thesis static and dynamic properties of fractional vortices in long Josephson junctions are investigated. Fractional vortices are circulating supercurrents similar to the well-known Josephson fluxons. Yet, they show the distinguishing property of carrying only a fraction of the magnetic flux quantum. Fractional vortices are interesting non-linear objects. They spontaneously appear and are pinned at the phase discontinuity points of so called 0-κ junctions but can be bend or flipped by external forces like bias currents or magnetic fields. 0-κ junctions and fractional vortices are generalizations of the well-known 0-π junctions and semifluxons, where not only phase jumps of pi but arbitrary values denoted by kappa are considered. By using so-called artificial 0-κ junctions that are based on standard Nb-AlO x -Nb technology the classical dynamics of fractional vortices has been investigated experimentally for the very first time. Here, half-integer zero field steps could be observed. These voltage steps on the junction's current-voltage characteristics correspond to the periodic flipping/hopping of fractional vortices. In addition, the oscillatory eigenmodes of fractional vortices were investigated. In contrast to fluxons fractional vortices have an oscillatory eigenmode with a frequency within the plasma gap. Using resonance spectroscopy the dependence of the eigenmode frequency on the flux carried by the vortex and an applied bias current was determined. (orig.)

Critical current density and upper critical field of the PbMo6S8 Chevrel phase

International Nuclear Information System (INIS)

Seeber, B.; Decroux, M.; Fischer, O.

1988-01-01

A detailed discussion of critical current density and upper critical field for PbMo 6 S 8 (PMS) is given. It is shown that PMS bulk as well as wire samples can be prepared with sufficient quality to observe the scaling law for the volume pinning force. Using the scaling law an estimation for the critical current density as a function of field and temperature was made. The study also indicates that a substantial improvement of the critical current density can be expected by optimizing the upper critical field without changing the microstructure. It is shown that the availability of high quality samples of EuMo 6 S 8 , to which PMS is similar, makes it possible to study separately the different physical parameters which determine the upper critical field in PMS

Current-voltage characteristics of a tunnel junction with resonant centers

International Nuclear Information System (INIS)

Ivanov, T.; Valtchinov, V.

1994-05-01

We calculated the I-V characteristics of a tunnel junction containing impurities in the barrier. We consider the indirect resonant tunneling involving the impurities. The Coulomb repulsion energy E c between two electrons with opposite spins simultaneously residing on the impurity is introduced by an Anderson Hamiltonian. At low temperatures T is much less than E c the I-V characteristics is linear in V both for V c and for V>E c and changes slope at V=E c . This behaviour reflects the energy spectrum of the impurity electrons - the finite value of the charging energy E c . At T ∼ E c the junction reveals an ohmic-like behaviour as a result of the smearing out of the charging effects by the thermal fluctuations. (author). 10 refs, 2 figs

In silico optimization of critical currents in superconductors

Energy Technology Data Exchange (ETDEWEB)

Kimmel, Gregory; Sadovskyy, Ivan A.; Glatz, Andreas

2017-07-01

For many technological applications of superconductors the performance of a material is determined by the highest current it can carry losslessly-the critical current. In turn, the critical current can be controlled by adding nonsuperconducting defects in the superconductor matrix. Here we report on systematic comparison of different local and global optimization strategies to predict optimal structures of pinning centers leading to the highest possible critical currents. We demonstrate performance of these methods for a superconductor with randomly placed spherical, elliptical, and columnar defects.

Long Josephson tunnel junctions with doubly connected electrodes

Science.gov (United States)

Monaco, R.; Mygind, J.; Koshelets, V. P.

2012-03-01

In order to mimic the phase changes in the primordial Big Bang, several cosmological solid-state experiments have been conceived, during the last decade, to investigate the spontaneous symmetry breaking in superconductors and superfluids cooled through their transition temperature. In one of such experiments, the number of magnetic flux quanta spontaneously trapped in a superconducting loop was measured by means of a long Josephson tunnel junction built on top of the loop itself. We have analyzed this system and found a number of interesting features not occurring in the conventional case with simply connected electrodes. In particular, the fluxoid quantization results in a frustration of the Josephson phase, which, in turn, reduces the junction critical current. Further, the possible stable states of the system are obtained by a self-consistent application of the principle of minimum energy. The theoretical findings are supported by measurements on a number of samples having different geometrical configuration. The experiments demonstrate that a very large signal-to-noise ratio can be achieved in the flux quanta detection.

Modulation and Control of Charge Transport Through Single-Molecule Junctions.

Science.gov (United States)

Wang, Kun; Xu, Bingqian

2017-02-01

The ability to modulate and control charge transport though single-molecule junction devices is crucial to achieving the ultimate goal of molecular electronics: constructing real-world-applicable electronic components from single molecules. This review aims to highlight the progress made in single-molecule electronics, emphasizing the development of molecular junction electronics in recent years. Among many techniques that attempt to wire a molecule to metallic electrodes, the single-molecule break junction (SMBJ) technique is one of the most reliable and tunable experimental platforms for achieving metal-molecule-metal configurations. It also provides great freedom to tune charge transport through the junction. Soon after the SMBJ technique was introduced, it was extensively used to measure the conductances of individual molecules; however, different conductances were obtained for the same molecule, and it proved difficult to interpret this wide distribution of experimental data. This phenomenon was later found to be mainly due to a lack of precise experimental control and advanced data analysis methods. In recent years, researchers have directed considerable effort into advancing the SMBJ technique by gaining a deeper physical understanding of charge transport through single molecules and thus enhancing its potential applicability in functional molecular-scale electronic devices, such as molecular diodes and molecular transistors. In parallel with that research, novel data analysis methods and approaches that enable the discovery of hidden yet important features in the data are being developed. This review discusses various aspects of molecular junction electronics, from the initial goal of molecular electronics, the development of experimental techniques for creating single-molecule junctions and determining single-molecule conductance, to the characterization of functional current-voltage features and the investigation of physical properties other than charge

High-efficiency thermal switch based on topological Josephson junctions

Science.gov (United States)

Sothmann, Björn; Giazotto, Francesco; Hankiewicz, Ewelina M.

2017-02-01

We propose theoretically a thermal switch operating by the magnetic-flux controlled diffraction of phase-coherent heat currents in a thermally biased Josephson junction based on a two-dimensional topological insulator. For short junctions, the system shows a sharp switching behavior while for long junctions the switching is smooth. Physically, the switching arises from the Doppler shift of the superconducting condensate due to screening currents induced by a magnetic flux. We suggest a possible experimental realization that exhibits a relative temperature change of 40% between the on and off state for realistic parameters. This is a factor of two larger than in recently realized thermal modulators based on conventional superconducting tunnel junctions.

Overlap junctions for high coherence superconducting qubits

Science.gov (United States)

Wu, X.; Long, J. L.; Ku, H. S.; Lake, R. E.; Bal, M.; Pappas, D. P.

2017-07-01

Fabrication of sub-micron Josephson junctions is demonstrated using standard processing techniques for high-coherence, superconducting qubits. These junctions are made in two separate lithography steps with normal-angle evaporation. Most significantly, this work demonstrates that it is possible to achieve high coherence with junctions formed on aluminum surfaces cleaned in situ by Ar plasma before junction oxidation. This method eliminates the angle-dependent shadow masks typically used for small junctions. Therefore, this is conducive to the implementation of typical methods for improving margins and yield using conventional CMOS processing. The current method uses electron-beam lithography and an additive process to define the top and bottom electrodes. Extension of this work to optical lithography and subtractive processes is discussed.

Intermittency-induced criticality in a resistor-inductor-diode circuit.

Science.gov (United States)

Potirakis, Stelios M; Contoyiannis, Yiannis; Diakonos, Fotios K; Hanias, Michael P

2017-04-01

The current fluctuations of a driven resistor-inductor-diode circuit are investigated here looking for signatures of critical behavior monitored by the driving frequency. The experimentally obtained time series of the voltage drop across the resistor (as directly proportional to the current flowing through the circuit) were analyzed by means of the method of critical fluctuations in analogy to thermal critical systems. Intermittent criticality was revealed for a critical frequency band signifying the transition between the normal rectifier phase in the low frequencies and a full-wave conducting, capacitorlike phase in the high frequencies. The transition possesses critical characteristics with a characteristic exponent p_{l}=1.65. A fractal analysis in terms of the rescale range (R/RSS) and detrended fluctuation analysis methods yielded results fully compatible with the critical dynamics analysis. Suggestions for the interpretation of the observed behavior in terms of p-n junction operation are discussed.

Dilute Nitrides For 4-And 6- Junction Space Solar Cells

Science.gov (United States)

Essig, S.; Stammler, E.; Ronsch, S.; Oliva, E.; Schachtner, M.; Siefer, G.; Bett, A. W.; Dimroth, F.

2011-10-01

According to simulations the efficiency of conventional, lattice-matched GaInP/GaInAs/Ge triple-junction space solar cells can be strongly increased by the incorporation of additional junctions. In this way the existing excess current of the Germanium bottom cell can be reduced and the voltage of the stack can be increased. In particular, the use of 1.0 eV materials like GaInNAs opens the door for solar cells with significantly improved conversion efficiency. We have investigated the material properties of GaInNAs grown by metal organic vapour phase epitaxy (MOVPE) and its impact on the quantum efficiency of solar cells. Furthermore we have developed a GaInNAs subcell with a bandgap energy of 1.0 eV and integrated it into a GaInP/GaInAs/GaInNAs/Ge 4-junction and a AlGaInP/GaInP/AlGaInAs/GaInAs/GaInNAs/Ge 6- junction space solar cell. The material quality of the dilute nitride junction limits the current density of these devices to 9.3 mA/cm2 (AM0). This is not sufficient for a 4-junction cell but may lead to current matched 6- junction devices in the future.

Electron-beam-induced current measurements with applied bias provide insight to locally resolved acceptor concentrations at p-n junctions

Directory of Open Access Journals (Sweden)

D. Abou-Ras

2015-07-01

Full Text Available Electron-beam-induced current (EBIC measurements have been employed for the investigation of the local electrical properties existing at various types of electrical junctions during the past decades. In the standard configuration, the device under investigation is analyzed under short-circuit conditions. Further insight into the function of the electrical junction can be obtained when applying a bias voltage. The present work gives insight into how EBIC measurements at applied bias can be conducted at the submicrometer level, at the example of CuInSe2 solar cells. From the EBIC profiles acquired across ZnO/CdS/CuInSe2/Mo stacks exhibiting p-n junctions with different net doping densities in the CuInSe2 layers, values for the width of the space-charge region, w, were extracted. For all net doping densities, these values decreased with increasing applied voltage. Assuming a linear relationship between w2 and the applied voltage, the resulting net doping densities agreed well with the ones obtained by means of capacitance-voltage measurements.

Current-induced spin transfer torque in ferromagnet-marginal Fermi liquid double tunnel junctions

International Nuclear Information System (INIS)

Mu Haifeng; Zheng Qingrong; Jin Biao; Su Gang

2005-01-01

Current-induced spin transfer torque through a marginal Fermi liquid (MFL) which is connected to two noncollinearly aligned ferromagnets via tunnel junctions is discussed in terms of the nonequilibrium Green function method. It is found that in the absence of the spin-flip scattering, the magnitude of the torque increases with the polarization and the coupling constant λ of the MFL, whose maximum increases with λ linearly, showing that the interactions between electrons tend to enhance the spin torque. When the spin-flip scattering is included, an additional spin torque is induced. It is found that the spin-flip scattering enhances the spin torque and gives rise to a nonlinear angular shift

Breaking into the epithelial apical-junctional complex--news from pathogen hackers.

Science.gov (United States)

Vogelmann, Roger; Amieva, Manuel R; Falkow, Stanley; Nelson, W James

2004-02-01

The epithelial apical-junctional complex is a key regulator of cellular functions. In addition, it is an important target for microbial pathogens that manipulate the cell to survive, proliferate and sometimes persist within a host. Out of a myriad of potential molecular targets, some bacterial and viral pathogens have selected a subset of protein targets at the apical-junctional complex of epithelial cells. Studying how microbes use these targets also teaches us about the inherent physiological properties of host molecules in the context of normal junctional structure and function. Thus, we have learned that three recently uncovered components of the apical-junctional complex of the Ig superfamily--junctional adhesion molecule, Nectin and the coxsackievirus and adenovirus receptor--are important regulators of junction structure and function and represent critical targets of microbial virulence gene products.

The psychostimulant modafinil enhances gap junctional communication in cortical astrocytes.

Science.gov (United States)

Liu, Xinhe; Petit, Jean-Marie; Ezan, Pascal; Gyger, Joël; Magistretti, Pierre; Giaume, Christian

2013-12-01

Sleep-wake cycle is characterized by changes in neuronal network activity. However, for the last decade there is increasing evidence that neuroglial interaction may play a role in the modulation of sleep homeostasis and that astrocytes have a critical impact in this process. Interestingly, astrocytes are organized into communicating networks based on their high expression of connexins, which are the molecular constituents of gap junction channels. Thus, neuroglial interactions should also be considered as the result of the interplay between neuronal and astroglial networks. Here, we investigate the effect of modafinil, a wakefulness-promoting agent, on astrocyte gap junctional communication. We report that in the cortex modafinil injection increases the expression of mRNA and protein of connexin 30 but not those of connexin 43, the other major astroglial connexin. These increases are correlated with an enhancement of intercellular dye coupling in cortical astrocytes, which is abolished when neuronal activity is silenced by tetrodotoxin. Moreover, gamma-hydroxybutyric acid, which at a millimolar concentration induces sleep, has an opposite effect on astroglial gap junctions in an activity-independent manner. These results support the proposition that astroglia may play an important role in complex physiological brain functions, such as sleep regulation, and that neuroglial networking interaction is modified during sleep-wake cycle. This article is part of the Special Issue Section entitled 'Current Pharmacology of Gap Junction Channels and Hemichannels'. Copyright © 2013. Published by Elsevier Ltd.

Critical power for lower hybrid current drive

International Nuclear Information System (INIS)

Assis, A.S. de; Sakanaka, P.H.; Azevedo, C.A. de; Busnardo-Neto, J.

1995-11-01

We have solved numerically the quasilinear Fokker-Planck equation which models the critical power for lower hybrid wave current drive. An exact value for the critical power necessary for current saturation, for tokamak current drive experiments, has been obtained. The nonlinear treatment presented here leads to a final profile for the parallel distribution function which is a plateau only in a part of the resonance region. This form of the distribution function is intermediate between two well known results: a plateau throughout the resonance region for the linear strong-source regime, D wave >> D coll and no plateau at all in the resonance region the linear weak-source regimen, D wave coll . The strength of the external power source and the value of the dc electric field are treated as given parameters in the integration scheme. (author). 24 refs, 6 figs

Time-evolution of photon heat current through series coupled two mesoscopic Josephson junction devices

Science.gov (United States)

Lu, Wen-Ting; Zhao, Hong-Kang; Wang, Jian

2018-03-01

Photon heat current tunneling through a series coupled two mesoscopic Josephson junction (MJJ) system biased by dc voltages has been investigated by employing the nonequilibrium Green’s function approach. The time-oscillating photon heat current is contributed by the superposition of different current branches associated with the frequencies of MJJs ω j (j = 1, 2). Nonlinear behaviors are exhibited to be induced by the self-inductance, Coulomb interaction, and interference effect relating to the coherent transport of Cooper pairs in the MJJs. Time-oscillating pumping photon heat current is generated in the absence of temperature difference, while it becomes zero after time-average. The combination of ω j and Coulomb interactions in the MJJs determines the concrete heat current configuration. As the external and intrinsic frequencies ω j and ω 0 of MJJs match some specific combinations, resonant photon heat current exhibits sinusoidal behaviors with large amplitudes. Symmetric and asymmetric evolutions versus time t with respect to ω 1 t and ω 2 t are controlled by the applied dc voltages of V 1 and V 2. The dc photon heat current formula is a special case of the general time-dependent heat current formula when the bias voltages are settled to zero. The Aharonov-Bohm effect has been investigated, and versatile oscillation structures of photon heat current can be achieved by tuning the magnetic fluxes threading through separating MJJs.

Cavity syncronisation of underdamped Josephson junction arrays

DEFF Research Database (Denmark)

Barbara, P.; Filatrella, G.; Lobb, C.

2003-01-01

the junctions in the array and an electromagnetic cavity. Here we show that a model of a one-dimensional array of Josephson junctions coupled to a resonator can produce many features of the coherent be havior above threshold, including coherent radiation of power and the shape of the array current...

The photo-assisted heat current and its Peltier coefficient in a metal/dot/metal junction

International Nuclear Information System (INIS)

Crépieux, A

2012-01-01

The photo-assisted heat current through a metal/dot/metal junction and its associated Peltier coefficient are computed in the framework of the time-dependent out-of-equilibrium Keldysh formalism in the presence of a dot energy modulation. When the frequency of the modulation is much larger than the amplitude of the modulation, the heat current follows the sinusoidal time evolution of the dot energy. This is no longer the case when the modulation frequency becomes of the order of or smaller than the amplitude of the modulation. To characterize this non-sinusoidal behavior, we have calculated the harmonics of the photo-assisted heat current. The zero-order harmonic can be expressed as an infinite sum of dc heat currents associated with a dot with shifted energies. It exhibits a devil's staircase profile with non-horizontal steps, whereas it is established that the steps are horizontal for the zero-order harmonic of the photo-assisted electric current. This particularity is related to the fact that the dot heat is not a conserved quantity due to energy dissipation within the tunnel barriers.

Effect of Impurities on the Josephson Current through Helical Metals: Exploiting a Neutrino Paradigm

Science.gov (United States)

Ghaemi, Pouyan; Nair, V. P.

2016-01-01

In this Letter we study the effect of time-reversal symmetric impurities on the Josephson supercurrent through two-dimensional helical metals such as on a topological insulator surface state. We show that, contrary to the usual superconducting-normal metal-superconducting junctions, the suppression of the supercurrent in the superconducting-helical metal-superconducting junction is mainly due to fluctuations of impurities in the junctions. Our results, which are a condensed matter realization of a part of the Mikheyev-Smirnov-Wolfenstein effect for neutrinos, show that the relationship between normal state conductance and the critical current of Josephson junctions is significantly modified for Josephson junctions on the surface of topological insulators. We also study the temperature dependence of the supercurrent and present a two fluid model which can explain some of the recent experimental results in Josephson junctions on the edge of topological insulators.

Influence of self-field on the critical current of Bi-2223/Ag tapes

International Nuclear Information System (INIS)

Lehtonen, Jorma; Korpela, Aki; Nah, Wansoo; Kang, Joonsun; Kovac, Pavol; Melisek, Tibor

2004-01-01

The knowledge of critical current density in a superconducting wire is essential in order to compute AC losses. In HTS tapes the critical current density is difficult to estimate from the measured critical current because self-field tends to reduce the current carrying capacity. In this paper the critical current is measured with a single sample and with two similar samples connected in antiparallel in order to compensate the self-field. Both types of measurement are simulated with finite element method. The simulations help to understand the relation between the measured critical current and material properties. The results suggest that in a high quality tape the self-field effect reduced the measured critical current ∼25% if compared to the real critical current at the zero external field

Laser induced non-monotonic degradation in short-circuit current of triple-junction solar cells

Science.gov (United States)

Dou, Peng-Cheng; Feng, Guo-Bin; Zhang, Jian-Min; Song, Ming-Ying; Zhang, Zhen; Li, Yun-Peng; Shi, Yu-Bin

2018-06-01

In order to study the continuous wave (CW) laser radiation effects and mechanism of GaInP/GaAs/Ge triple-junction solar cells (TJSCs), 1-on-1 mode irradiation experiments were carried out. It was found that the post-irradiation short circuit current (ISC) of the TJSCs initially decreased and then increased with increasing of irradiation laser power intensity. To explain this phenomenon, a theoretical model had been established and then verified by post-damage tests and equivalent circuit simulations. Conclusion was drawn that laser induced alterations in the surface reflection and shunt resistance were the main causes for the observed non-monotonic decrease in the ISC of the TJSCs.

Fast temporal fluctuations in single-molecule junctions.

Science.gov (United States)

Ochs, Roif; Secker, Daniel; Elbing, Mark; Mayor, Marcel; Weber, Heiko B

2006-01-01

The noise within the electrical current through single-molecule junctions is studied cryogenic temperature. The organic sample molecules were contacted with the mechanically controlled break-junction technique. The noise spectra refer to a where only few Lorentzian fluctuators occur in the conductance. The frequency dependence shows qualitative variations from sample to sample.

Josephson junction at the onset of chaos: A complete devil's staircase

International Nuclear Information System (INIS)

Alstrom, P.; Levinsen, M.T.

1985-01-01

By analog computer calculations of the resistively and capacitively shunted Josephson junction model, I-V characteristics are measured for several choices of the parameters in the Josephson equation. The points, where hysteresis sets in, are related to cubic inflection points in the return map. For different values of the amplitude and the frequency of the imposed ac field the critical line is determined in the (I,G) space, where I is the dc current and G is the damping factor. Furthermore, the subharmonic steps along the critical line form a complete devil's staircase with a fractal dimension Dapprox.0.87 and a decay exponent for the (1/Q)-steps deltaapprox.3. Besides the hysteresis which gives occasion for a chaotic behavior everywhere below a certain critical voltage, hysteresis also turns up locally. It is suggested that the critical points where local hysteresis occurs can be found by use of a local approximation

Gap junctions and epileptic seizures--two sides of the same coin?

Directory of Open Access Journals (Sweden)

Vladislav Volman

Full Text Available Electrical synapses (gap junctions play a pivotal role in the synchronization of neuronal ensembles which also makes them likely agonists of pathological brain activity. Although large body of experimental data and theoretical considerations indicate that coupling neurons by electrical synapses promotes synchronous activity (and thus is potentially epileptogenic, some recent evidence questions the hypothesis of gap junctions being among purely epileptogenic factors. In particular, an expression of inter-neuronal gap junctions is often found to be higher after the experimentally induced seizures than before. Here we used a computational modeling approach to address the role of neuronal gap junctions in shaping the stability of a network to perturbations that are often associated with the onset of epileptic seizures. We show that under some circumstances, the addition of gap junctions can increase the dynamical stability of a network and thus suppress the collective electrical activity associated with seizures. This implies that the experimentally observed post-seizure additions of gap junctions could serve to prevent further escalations, suggesting furthermore that they are a consequence of an adaptive response of the neuronal network to the pathological activity. However, if the seizures are strong and persistent, our model predicts the existence of a critical tipping point after which additional gap junctions no longer suppress but strongly facilitate the escalation of epileptic seizures. Our results thus reveal a complex role of electrical coupling in relation to epileptiform events. Which dynamic scenario (seizure suppression or seizure escalation is ultimately adopted by the network depends critically on the strength and duration of seizures, in turn emphasizing the importance of temporal and causal aspects when linking gap junctions with epilepsy.

Interaction between fractional Josephson vortices in multi-gap superconductor tunnel junctions

Science.gov (United States)

Kim, Ju H.

In a long Josephson junction (LJJ) with two-band superconductors, fractionalization of Josephson vortices (fluxons) can occur in the broken time reversal symmetry state when spatial phase textures (i-solitons) are excited. Excitation of i-solitons in each superconductor layer of the junction, arising due to the presence of two condensates and the interband Josephson effect, leads to spatial variation of the critical current density between the superconductor layers. Similar to the situation in a YBa2 Cu3O7 - x superconductor film grain boundary, this spatial dependence of the crtitical current density can self-generate magnetic flux in the insulator layer, resulting in fractional fluxons with large and small fraction of flux quantum. Similar to fluxons in one-band superconductor LJJ, these fractional fluxons are found to interact with each other. The interaction between large and small fractional fluxons determines the size of a fluxon which includes two (one large and one small) fractional fluxons. We discuss the nature of interaction between fractional fluxons and suggest that i-soliton excitations in multi-gap superconductor LJJs may be probed by using magnetic flux measurements.

The influence of tensile strain to critical current of Bi2223 composite tape

International Nuclear Information System (INIS)

Mukai, Y.; Shin, J.K.; Ochiai, S.; Okuda, H.; Sugano, M.; Osamura, K.

2008-01-01

As the stress-induced damage evolution is different from position to position in the sample, the local critical current is scattered in a sample, affecting on the overall current. The present work aimed to describe the distribution of local critical current and its relation to overall critical current under tensile stress for Bi2223/Ag superconducting composite tape. In the experiment, seven voltage probes were attached in a step of 10 mm. The local critical current and n-value at 77 K under various applied stress levels were measured for a voltage probe distance 10 mm and the overall ones for a probe distance 60 mm. Main results are summarized as follows. The overall critical current and n-value were described well by using the voltage summation model in which the sample was regarded as a one dimensional series circuit. For the low applied stress, the distribution of local critical current was described with the three parameter Weibull distribution function. Using the measured distribution of the local critical current, an experimental relation of critical current to n-value and the voltage summation model, and applying the Monte Carlo method, the overall critical current was predicted, which was in good agreement with the experimental results. Based on these results, the sample length dependence of critical current of the sample damaged by tensile stress was discussed

Shapiro and parametric resonances in coupled Josephson junctions

International Nuclear Information System (INIS)

Gaafar, Ma A; Shukrinov, Yu M; Foda, A

2012-01-01

The effect of microwave irradiation on the phase dynamics of intrinsic Josephson junctions in high temperature superconductors is investigated. We compare the current-voltage characteristics for a stack of coupled Josephson junctions under external irradiation calculated in the framework of CCJJ and CCJJ+DC models.

Junction depth measurement using carrier illumination

International Nuclear Information System (INIS)

Borden, Peter

2001-01-01

Carrier Illumination [trade mark] (CI) is a new method recently developed to meet the need for a non-destructive, high throughput junction depth measurement on patterned wafers. A laser beam creates a quasi-static excess carrier profile in the semiconductor underlying the activated junction. The excess carrier profile is fairly constant below the junction, and drops rapidly in the junction, creating a steep index of refraction gradient at the junction edge. Interference with light reflected from this index gradient provides a signal that is analyzed to determine the junction depth. The paper summarizes evaluation of performance in full NMOS and PMOS process flows, on both bare and patterned wafers. The aims have been to validate (1) performance in the presence of underlying layers typically found at the source/drain (S/D) process steps and (2) measurement on patterned wafers. Correlation of CI measurements to SIMS and transistor drive current are shown. The data were obtained from NMOS structures using As S/D and LDD implants. Correlations to SRP, SIMS and sheet resistance are shown for PMOS structures using B 11 LDD implants. Gage capability measurements are also presented

The critical current of granular superconductor

International Nuclear Information System (INIS)

Ignat'ev, V.K.

1998-01-01

A mechanism of hyper vortex pinning in granular superconductors is proposed to describe the field dependence of the critical current density and pinning potential. The results are in a good agreement with the experiment. The model represents the peak effect and the percolation mechanism of conductivity in ceramic superconductors

Measured Temperature Dependence of the cos-phi Conductance in Josephson Tunnel Junctions

DEFF Research Database (Denmark)

Sørensen, O. H.; Mygind, Jesper; Pedersen, Niels Falsig

1977-01-01

The temperature dependence of the cosϕ conductance in Sn-O-Sn Josephson tunnel junctions has been measured just below the critical temperature, Tc. From the resonant microwave response at the junction plasma frequency as the temperature is decreased from Tc it is deduced that the amplitude of the...

Silicon fiber with p-n junction

International Nuclear Information System (INIS)

Homa, D.; Cito, A.; Pickrell, G.; Hill, C.; Scott, B.

2014-01-01

In this study, we fabricated a p-n junction in a fiber with a phosphorous doped silicon core and fused silica cladding. The fibers were fabricated via a hybrid process of the core-suction and melt-draw techniques and maintained overall diameters ranging from 200 to 900 μm and core diameters of 20–800 μm. The p-n junction was formed by doping the fiber with boron and confirmed via the current-voltage characteristic. The demonstration of a p-n junction in a melt-drawn silicon core fiber paves the way for the seamless integration of optical and electronic devices in fibers.

High performance as-grown and annealed high band gap tunnel junctions: Te behavior at the interface

Energy Technology Data Exchange (ETDEWEB)

Bedair, S. M., E-mail: bedair@ncsu.edu; Harmon, Jeffrey L.; Carlin, C. Zachary; Hashem Sayed, Islam E.; Colter, P. C. [Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, North Carolina 27695 (United States)

2016-05-16

The performance of n{sup +}-InGaP(Te)/p{sup +}-AlGaAs(C) high band gap tunnel junctions (TJ) is critical for achieving high efficiency in multijunction photovoltaics. Several limitations for as grown and annealed TJ can be attributed to the Te doping of InGaP and its behavior at the junction interface. Te atoms in InGaP tend to get attached at step edges, resulting in a Te memory effect. In this work, we use the peak tunneling current (J{sub pk}) in this TJ as a diagnostic tool to study the behavior of the Te dopant at the TJ interface. Additionally, we used our understanding of Te behavior at the interface, guided by device modeling, to modify the Te source shut-off procedure and the growth rate. These modifications lead to a record performance for both the as-grown (2000 A/cm{sup 2}) and annealed (1000 A/cm{sup 2}) high band gap tunnel junction.

Critical current scaling and the pivot-point in Nb3Sn strands

International Nuclear Information System (INIS)

Tsui, Y; Hampshire, D P

2012-01-01

Detailed measurements are provided of the engineering critical current density (J c ) and the index of transition (n-value) of two different types of advanced ITER Nb 3 Sn superconducting strand for fusion applications. The samples consist of one internal-tin strand (OST) and two bronze-route strands (BEAS I and BEAS II—reacted using different heat treatments). Tests on different sections of these wires show that prior to applying strain, J c is homogeneous to better than 2% along the length of each strand. J c data have been characterized as a function of magnetic field (B ≤ 14.5 T), temperature (4.2 K ≤ T ≤ 12 K) and applied axial strain ( − 1% ≤ ε A ≤ 0.8%). Strain-cycling tests demonstrate that the variable strain J c data are reversible to better than 2% when the applied axial strain is in the range of − 1% ≤ ε A ≤ 0.5%. The wires are damaged when the intrinsic strain (ε I ) is ε I ≥ 0.55% and ε I ≥ 0.23% for the OST and BEAS strands, respectively. The strain dependences of the normalized J c for each type of strand are similar to those of prototype strands of similar design measured in 2005 and 2008 to about 2% which makes them candidate strands for a round-robin interlaboratory comparison. The J c data are described by Durham, ITER and Josephson-junction parameterizations to an accuracy of about 4%. For all of these scaling laws, the percentage difference between the data and the parameterization is larger when J c is small, caused by high B, T or |ε I |. The n-values can be described by a modified power law of the form n=1+rI c s , where r and s are approximately constant and I c is the critical current. It has long been known that pivot-points (or cross-overs) in J c occur at high magnetic field and temperature. Changing the magnetic field or temperature from one side of the pivot-point to the other changes the highest J c sample to the lowest J c sample and vice versa. The pivot-point follows the B–T phase boundary

Ultimately short ballistic vertical graphene Josephson junctions

Science.gov (United States)

Lee, Gil-Ho; Kim, Sol; Jhi, Seung-Hoon; Lee, Hu-Jong

2015-01-01

Much efforts have been made for the realization of hybrid Josephson junctions incorporating various materials for the fundamental studies of exotic physical phenomena as well as the applications to superconducting quantum devices. Nonetheless, the efforts have been hindered by the diffusive nature of the conducting channels and interfaces. To overcome the obstacles, we vertically sandwiched a cleaved graphene monoatomic layer as the normal-conducting spacer between superconducting electrodes. The atomically thin single-crystalline graphene layer serves as an ultimately short conducting channel, with highly transparent interfaces with superconductors. In particular, we show the strong Josephson coupling reaching the theoretical limit, the convex-shaped temperature dependence of the Josephson critical current and the exceptionally skewed phase dependence of the Josephson current; all demonstrate the bona fide short and ballistic Josephson nature. This vertical stacking scheme for extremely thin transparent spacers would open a new pathway for exploring the exotic coherence phenomena occurring on an atomic scale. PMID:25635386

Spin-filtering junctions with double ferroelectric barriers

International Nuclear Information System (INIS)

Yan, Ju; Ding-Yu, Xing

2009-01-01

An FS/FE/NS/FE/FS double tunnel junction is suggested to have the ability to inject, modulate and detect the spin-polarized current electrically in a single device, where FS is the ferromagnetic semiconductor electrode, NS is the nonmagnetic semiconductor, and FE the ferroelectric barrier. The spin polarization of the current injected into the NS region can be switched between a highly spin-polarized state and a spin unpolarized state. The high spin polarization may be detected by measuring the tunneling magnetoresistance ratio of the double tunnel junction

Effect of strain on the critical-current density of Cu-Nb composites

International Nuclear Information System (INIS)

Klein, J.D.; Rose, R.M.

1987-01-01

Microfilamentary superconducting composites of Nb fibers in Cu matrices prepared by the stack and draw method were tested for tensile critical-current performance at 4.2 K. The superconducting critical-current densities increased exponentially under the influence of an applied mechanical strain until the onset of Nb fiber plastic deformation. In the elastic range, the critical-current densities conformed to log 10 J/sub c/ = m (strain)+b. In several tests the critical current was increased by more than an order of magnitude by the applied strain. This behavior is consistent with an increase in the upper critical field of the Nb fibers by the applied stress

Differences between two definitions of the critical current of HTS coils

International Nuclear Information System (INIS)

Pitel, Jozef

2013-01-01

Definition of the critical current of a coil made of anisotropic high temperature superconducting conductor is rather complicated and ambiguous, since the magnetic field generated across the winding can differ considerably in relation to both its magnitude and orientation. Two definitions of the critical current of such coils are discussed. The first definition, very often used in calculations to analyze the current carrying capacity, electric field and power dissipation of individual turns, represents an operating current at which an electric field of 1 μV cm −1 appears on one turn. The second definition represents an integral approach, and is used in experiments. This definition introduces the critical current of the coil as an operating current at which an average electric field E s , usually 0.1 μV cm −1 , appears on coil terminals. As an example, the distribution of the critical current and electric field of individual turns in the winding of a BSCCO model coil was analyzed. Critical currents of the coil as a function of an external magnetic field parallel with the coil axis were calculated according to both definitions. The results show that the first definition, which characterizes the winding at the local level, is suitable for HTS coils either operating in self-field or in a low external field, because the differences between the critical currents and n-indices of individual turns are considerable. The second criterion is suitable for the HTS coils operating in high fields, i.e. like high field insert coils. The self-field of a high field insert coil is negligible if the external field is high. As a result, the critical currents of all turns are almost identical, and the anisotropy in I c (B) characteristic plays practically no role. Rather unexpected behavior of the voltage–current characteristic of the model coil is predicted if an external field is applied. (paper)

Electrical transport characteristics of Bi2Sr2CaCu2O8+δstacked junctions with control of the carrier density

International Nuclear Information System (INIS)

Inomata, Kunihiro; Kawae, Takeshi; Kim, Sang-Jae; Nakajima, Kensuke; Yamashita, Tsutomu; Sato, Shigeo; Nakajima, Koji; Hatano, Takeshi

2003-01-01

The control of the critical current density (J c ) and the junction resistance (R N ) along the c-axis of intrinsic Josephson junctions (IJJs) on a high-T c superconductor is very important for applying the IJJs to electronic devices. For controlling these junction parameters, we have clarified the relationship of J c , R N and the carrier density in Bi 2 Sr 2 CaCu 2 O 8+δ whiskers by changing the carrier density with an annealing process. We determined the electrical transport characteristics of the IJJs. As a result, the J c increased, and the R N decreased systematically when the carrier density increased. The values of J c and R N could be controlled by a change in the carrier density

Spatial inhomogeneous barrier heights at graphene/semiconductor Schottky junctions

Science.gov (United States)

Tomer, Dushyant

Graphene, a semimetal with linear energy dispersion, forms Schottky junction when interfaced with a semiconductor. This dissertation presents temperature dependent current-voltage and scanning tunneling microscopy/spectroscopy (STM/S) measurements performed on graphene Schottky junctions formed with both three and two dimensional semiconductors. To fabricate Schottky junctions, we transfer chemical vapor deposited monolayer graphene onto Si- and C-face SiC, Si, GaAs and MoS2 semiconducting substrates using polymer assisted chemical method. We observe three main type of intrinsic spatial inhomogeneities, graphene ripples, ridges and semiconductor steps in STM imaging that can exist at graphene/semiconductor junctions. Tunneling spectroscopy measurements reveal fluctuations in graphene Dirac point position, which is directly related to the Schottky barrier height. We find a direct correlation of Dirac point variation with the topographic undulations of graphene ripples at the graphene/SiC junction. However, no such correlation is established at graphene/Si and Graphene/GaAs junctions and Dirac point variations are attributed to surface states and trapped charges at the interface. In addition to graphene ripples and ridges, we also observe atomic scale moire patterns at graphene/MoS2 junction due to van der Waals interaction at the interface. Periodic topographic modulations due to moire pattern do not lead to local variation in graphene Dirac point, indicating that moire pattern does not contribute to fluctuations in electronic properties of the heterojunction. We perform temperature dependent current-voltage measurements to investigate the impact of topographic inhomogeneities on electrical properties of the Schottky junctions. We observe temperature dependence in junction parameters, such as Schottky barrier height and ideality factor, for all types of Schottky junctions in forward bias measurements. Standard thermionic emission theory which assumes a perfect

Electromagnetic waves in single- and multi-Josephson junctions

International Nuclear Information System (INIS)

Matsumoto, Hideki; Koyama, Tomio; Machida, Masahiko

2008-01-01

The terahertz wave emission from the intrinsic Josephson junctions is one of recent topics in high T c superconductors. We investigate, by numerical simulation, properties of the electromagnetic waves excited by a constant bias current in the single- and multi-Josephson junctions. Nonlinear equations of phase-differences are solved numerically by treating the effects of the outside electromagnetic fields as dynamical boundary conditions. It is shown that the emitted power of the electromagnetic wave can become large near certain retrapping points of the I-V characteristics. An instability of the inside phase oscillation is related to large amplitude of the oscillatory waves. In the single- (or homogeneous mutli-) Josephson junctions, electromagnetic oscillations can occur either in a form of standing waves (shorter junctions) or by formation of vortex-antivortex pairs (longer junctions). How these two effects affects the behavior of electromagnetic waves in the intrinsic Josephson junctions is discussed

Superconductive junctions for x-ray spectroscopy

International Nuclear Information System (INIS)

Grand, J.B. le; Bruijn, M.P.; Frericks, M.; Korte, P.A.J. de; Houwman, E.P.; Flokstra, J.

1992-01-01

Biasing of SIS-junctions for the purpose of high energy resolution x-ray detection is complicated by the presence of a DC Josephson current and AC Josephson current resonances, so that a large magnetic field is normally used for the suppression of these Josephson features. A transimpedance amplifier is proposed for biasing and signal amplification at low magnetic field. X-ray spectroscopy detectors for astronomy require a high detection efficiency in the 0.5-10 keV energy band and a reasonable (∼1 cm 2 ) detector area. Calculations on absorber-junctions combinations which might meet these requirements are presented. (author) 9 refs.; 10 figs

Fabrication of Schottky Junction Between Au and SrTiO3

Science.gov (United States)

Inoue, Akira; Izumisawa, Kei; Uwe, Hiromoto

2001-05-01

A Schottky junction with a high rectification ratio between Au and La-doped SrTiO3 has been fabricated using a simple surface treatment. Highly La-doped (5%) SrTiO3 single crystals are annealed in O2 atmosphere at about 1000°C for 1 h and etched in HNO3 for more than five min. The HNO3 etching is performed in a globe box containing N2 to prevent pollution from the air. After the treatment, Au is deposited on the SrTiO3 surface in a vacuum (˜ 10-7 Torr) with an e-gun evaporator. The current voltage characteristics of the junction have shown excellent rectification properties, although junctions using neither annealed nor etched SrTiO3 exhibit high leak current in reverse voltage. The rectification ratio of the junction at 1 V is more than six orders of magnitude and there is no hysteresis in the current voltage spectra. The logarithm of the current is linear with the forward bias voltage. The ideal factor of the junction is estimated to be about 1.68. These results suggest that, if prevented from being pollution by the air, a good Schottky junction can be obtained by easy processes such as annealing in oxygen atmosphere and surface etching with acid.

CRIM1 complexes with ß-catenin and cadherins, stabilizes cell-cell junctions and is critical for neural morphogenesis.

Directory of Open Access Journals (Sweden)

Virgilio G Ponferrada

Full Text Available In multicellular organisms, morphogenesis is a highly coordinated process that requires dynamically regulated adhesion between cells. An excellent example of cellular morphogenesis is the formation of the neural tube from the flattened epithelium of the neural plate. Cysteine-rich motor neuron protein 1 (CRIM1 is a single-pass (type 1 transmembrane protein that is expressed in neural structures beginning at the neural plate stage. In the frog Xenopus laevis, loss of function studies using CRIM1 antisense morpholino oligonucleotides resulted in a failure of neural development. The CRIM1 knockdown phenotype was, in some cases, mild and resulted in perturbed neural fold morphogenesis. In severely affected embryos there was a dramatic failure of cell adhesion in the neural plate and complete absence of neural structures subsequently. Investigation of the mechanism of CRIM1 function revealed that it can form complexes with ß-catenin and cadherins, albeit indirectly, via the cytosolic domain. Consistent with this, CRIM1 knockdown resulted in diminished levels of cadherins and ß-catenin in junctional complexes in the neural plate. We conclude that CRIM1 is critical for cell-cell adhesion during neural development because it is required for the function of cadherin-dependent junctions.

Performance comparison between p–i–n and p–n junction tunneling field-effect transistors

Science.gov (United States)

Yoon, Young Jun; Seo, Jae Hwa; Kang, In Man

2018-06-01

In this study, we investigated the direct-current (DC) and radio-frequency (RF) performances of p–i–n and p–n junction tunneling field-effect transistors (TFETs). Compared to the p–i–n junction TFET, the p–n junction TFET exhibited higher on-state current (I on) because the channel formation mechanism of the p–n junction TFET resulted in a narrower tunneling barrier and an expanded tunneling area. Further, the reduction of I on of the p–n junction TFET by the interface trap was smaller. Moreover, the p–n junction TFET exhibited lower gate-to-drain capacitance (C gd) because a depletion capacitance (C gd,dep) was formed by the depletion region under gate dielectric. Consequently, the p–n junction TFET achieved an improvement of cut-off frequency (f T) and intrinsic delay time (τ), which are related to the current performance and total gate capacitance (C gg). We confirmed the enhancement of device performances in terms of I on, f T, and τ by the conduction mechanism of the p–n junction TFET.

Unjoined primary and secondary neural tubes: junctional neural tube defect, a new form of spinal dysraphism caused by disturbance of junctional neurulation.

Science.gov (United States)

Eibach, Sebastian; Moes, Greg; Hou, Yong Jin; Zovickian, John; Pang, Dachling

2017-10-01

Primary and secondary neurulation are the two known processes that form the central neuraxis of vertebrates. Human phenotypes of neural tube defects (NTDs) mostly fall into two corresponding categories consistent with the two types of developmental sequence: primary NTD features an open skin defect, an exposed, unclosed neural plate (hence an open neural tube defect, or ONTD), and an unformed or poorly formed secondary neural tube, and secondary NTD with no skin abnormality (hence a closed NTD) and a malformed conus caudal to a well-developed primary neural tube. We encountered three cases of a previously unrecorded form of spinal dysraphism in which the primary and secondary neural tubes are individually formed but are physically separated far apart and functionally disconnected from each other. One patient was operated on, in whom both the lumbosacral spinal cord from primary neurulation and the conus from secondary neurulation are each anatomically complete and endowed with functioning segmental motor roots tested by intraoperative triggered electromyography and direct spinal cord stimulation. The remarkable feature is that the two neural tubes are unjoined except by a functionally inert, probably non-neural band. The developmental error of this peculiar malformation probably occurs during the critical transition between the end of primary and the beginning of secondary neurulation, in a stage aptly called junctional neurulation. We describe the current knowledge concerning junctional neurulation and speculate on the embryogenesis of this new class of spinal dysraphism, which we call junctional neural tube defect.

Shunted-Josephson-junction model. II. The nonautonomous case

DEFF Research Database (Denmark)

Belykh, V. N.; Pedersen, Niels Falsig; Sørensen, O. H.

1977-01-01

The shunted-Josephson-junction model with a monochromatic ac current drive is discussed employing the qualitative methods of the theory of nonlinear oscillations. As in the preceding paper dealing with the autonomous junction, the model includes a phase-dependent conductance and a shunt capacitance....... The mathematical discussion makes use of the phase-space representation of the solutions to the differential equation. The behavior of the trajectories in phase space is described for different characteristic regions in parameter space and the associated features of the junction IV curve to be expected are pointed...... out. The main objective is to provide a qualitative understanding of the junction behavior, to clarify which kinds of properties may be derived from the shunted-junction model, and to specify the relative arrangement of the important domains in the parameter-space decomposition....

Breaking into the epithelial apical–junctional complex — news from pathogen hackers

Science.gov (United States)

Vogelmann, Roger; Amieva, Manuel R; Falkow, Stanley; Nelson, W James

2012-01-01

The epithelial apical–junctional complex is a key regulator of cellular functions. In addition, it is an important target for microbial pathogens that manipulate the cell to survive, proliferate and sometimes persist within a host. Out of a myriad of potential molecular targets, some bacterial and viral pathogens have selected a subset of protein targets at the apical–junctional complex of epithelial cells. Studying how microbes use these targets also teaches us about the inherent physiological properties of host molecules in the context of normal junctional structure and function. Thus, we have learned that three recently uncovered components of the apical–junctional complex of the Ig superfamily — junctional adhesion molecule, Nectin and the coxsackievirus and adenovirus receptor — are important regulators of junction structure and function and represent critical targets of microbial virulence gene products. PMID:15037310

Charge transport in junctions between d-wave superconductors

International Nuclear Information System (INIS)

Barash, Y.S.; Galaktionov, A.V.; Zaikin, A.D.

1995-01-01

We develop a microscopic analysis of superconducting and dissipative currents in junctions between superconductors with d-wave symmetry of the order parameter. We study the proximity effect in such superconductors and show that for certain crystal orientations the superconducting order parameter can be essentially suppressed in the vicinity of a nontransparent specularly reflecting boundary. This effect strongly influences the value and the angular dependence of the dc Josephson current j S . At T∼T c it leads to a crossover between j S ∝T c -T and j S ∝(T c -T) 2 respectively for homogeneous and nonhomogeneous distribution of the order parameter in the vicinity of a tunnel junction. We show that at low temperatures the current-phase relation j S (cphi) for superconductor--normal-metal--superconductor junctions and short weak links between d-wave superconductors is essentially nonharmonic and contains a discontinuity at cphi=0. This leads to further interesting features of such systems which can be used for pairing symmetry tests in high-temperature superconductors (HTSC). We also investigated the low-temperature I-V curves of normal-metal--superconductor and superconductor-superconductor tunnel junctions and demonstrated that depending on the junction type and crystal orientation these curves show zero-bias anomalies I∝V 2 , I∝V 2 ln(1/V), and I∝V 3 caused by the gapless behavior of the order parameter in d-wave superconductors. Many of our results agree well with recent experimental findings for HTSC compounds

Effect of solar-cell junction geometry on open-circuit voltage

Science.gov (United States)

Weizer, V. G.; Godlewski, M. P.

1985-01-01

Simple analytical models have been found that adequately describe the voltage behavior of both the stripe junction and dot junction grating cells as a function of junction area. While the voltage in the former case is found to be insensitive to junction area reduction, significant voltage increases are shown to be possible for the dot junction cell. With regard to cells in which the junction area has been increased in a quest for better performance, it was found that (1) texturation does not affect the average saturation current density J0, indicating that the texturation process is equivalent to a simple extension of junction area by a factor of square root of 3 and (2) the vertical junction cell geometry produces a sizable decrease in J0 that, unfortunately, is more than offset by the effects of attendant areal increases.

Antireflection coating design for series interconnected multi-junction solar cells

International Nuclear Information System (INIS)

Aiken, Daniel J.

1999-01-01

AR coating design for multi-junction solar cells can be more challenging than in the single junction case. Reasons for this are discussed. Analytical expressions used to optimize AR coatings for single junction solar cells are extended for use in monolithic, series interconnected multi-junction solar cell AR coating design. The result is an analytical expression which relates the solar cell performance (through J(sub SC)) directly to the AR coating design through the device reflectance. It is also illustrated how AR coating design can be used to provide an additional degree of freedom for current matching multi-junction devices

Analysis of Schottky Barrier Parameters and Current Transport Properties of V/p-Type GaN Schottky Junction at Low Temperatures

Science.gov (United States)

Asha, B.; Harsha, Cirandur Sri; Padma, R.; Rajagopal Reddy, V.

2018-05-01

The electrical characteristics of a V/p-GaN Schottky junction have been investigated by current-voltage (I-V) and capacitance-voltage (C-V) characteristics under the assumption of the thermionic emission (TE) theory in the temperature range of 120-280 K with steps of 40 K. The zero-bias barrier height (ΦB0), ideality factor (n), flat-band barrier height (ΦBF) and series resistance (R S) values were evaluated and were found to be strongly temperature dependent. The results revealed that the ΦB0 values increase, whereas n, ΦFB and R S values decrease, with increasing temperature. Using the conventional Richardson plot, the mean barrier height (0.39 eV) and Richardson constant (8.10 × 10-10 Acm-2 K-2) were attained. The barrier height inhomogeneities were demonstrated by assuming a Gaussian distribution function. The interface state density (N SS) values were found to decrease with increasing temperature. The reverse leakage current mechanism of the V/p-GaN Schottky junction was found to be governed by Poole-Frenkel emission at all temperatures.

Parametric frequency conversion in long Josephson junctions

International Nuclear Information System (INIS)

Irie, F.; Ashihara, S.; Yoshida, K.

1976-01-01

Current steps at voltages corresponding to the parametric coupling between an applied r.f. field and junction resonant modes have been observed in long Josephson tunnel junctions in the flux-flow state. The observed periodic variations of the step height due to the applied magnetic field are explained quantitatively by a perturbational analysis using Josephson phase equations. The present study demonstrates that the moving vortex array can serve as a coherent pump wave for signal waves propagating in the barrier region, which indicates, as a result, the possibility of traveling-wave parametric devices with long Josephson tunnel junctions. (author)

Junction leakage measurements with micro four-point probes

DEFF Research Database (Denmark)

Lin, Rong; Petersen, Dirch Hjorth; Wang, Fei

2012-01-01

We present a new, preparation-free method for measuring the leakage current density on ultra-shallow junctions. The junction leakage is found by making a series of four-point sheet resistance measurements on blanket wafers with variable electrode spacings. The leakage current density is calculated...... using a fit of the measured four-point resistances to an analytical two-sheet model. The validity of the approximation involved in the two-sheet model is verified by a comparison to finite element model calculations....

Superconducting Coset Topological Fluids in Josephson Junction Arrays

CERN Document Server

Diamantini, M C; Trugenberger, C A; Sodano, Pasquale; Trugenberger, Carlo A.

2006-01-01

We show that the superconducting ground state of planar Josephson junction arrays is a P- and T-invariant coset topological quantum fluid whose topological order is characterized by the degeneracy 2 on the torus. This new mechanism for planar superconductivity is the P- and T-invariant analogue of Laughlin's quantum Hall fluids. The T=0 insulator-superconductor quantum transition is a quantum critical point characterized by gauge fields and deconfined degrees of freedom. Experiments on toroidal Josephson junction arrays could provide the first direct evidence for topological order and superconducting quantum fluids.

Gap junctions-guards of excitability

DEFF Research Database (Denmark)

Stroemlund, Line Waring; Jensen, Christa Funch; Qvortrup, Klaus

2015-01-01

Cardiomyocytes are connected by mechanical and electrical junctions located at the intercalated discs (IDs). Although these structures have long been known, it is becoming increasingly clear that their components interact. This review describes the involvement of the ID in electrical disturbances...... of the heart and focuses on the role of the gap junctional protein connexin 43 (Cx43). Current evidence shows that Cx43 plays a crucial role in organizing microtubules at the intercalated disc and thereby regulating the trafficking of the cardiac sodium channel NaV1.5 to the membrane....

Strain reduced critical current in Bi-2223/Ag superconductors under axial tension and compression

International Nuclear Information System (INIS)

Haken, B. ten; Godeke, A.; Kate, H.H.J. ten

1997-01-01

The critical current of Ag sheathed Bi(Pb)SrCaCuO-2223 tape conductors is investigated as a function of various strain components. A reduction of the critical current occurs due to both tensile or a compressive strain. The critical current reduction is qualitatively similar with the results as observed in Bi-2212 conductors. An axial compression leads to an immediate critical current reduction. The critical current in an axially elongated sample remains nearly constant up to a certain limit typically close to 0.3% strain. For a larger elongation the critical current reduces rapidly. A transverse pressure acting on the tape surface leads also to an irreversible critical current reduction. This behavior is compared with the influence of an axial compression with an effective Young's modulus. The deformation induced critical current reductions in Bi-2223 conductors can be described by a model that is already proposed for Bi-2212 conductors. This model is based on the irreversible nature of the critical current reduction due to a certain deformation

Modulation of neural activity in the temporoparietal junction with transcranial direct current stimulation changes the role of beliefs in moral judgment

Directory of Open Access Journals (Sweden)

Hang eYe

2015-12-01

Full Text Available Judgments about whether an action is morally right or wrong typically depend on our capacity to infer the actor’s beliefs and the outcomes of the action. Prior neuroimaging studies have found that mental state (e.g., beliefs, intentions attribution for moral judgment involves a complex neural network that includes the temporoparietal junction (TPJ. However, neuroimaging studies cannot demonstrate a direct causal relationship between the activity of this brain region and mental state attribution for moral judgment. In the current study, we used transcranial direct current stimulation (tDCS to transiently alter neural activity in the TPJ. The participants were randomly assigned to one of three stimulation treatments (right anodal/left cathodal tDCS, left anodal/right cathodal tDCS, or sham stimulation. Each participant was required to complete two similar tasks of moral judgment before receiving tDCS and after receiving tDCS. We studied whether tDCS to the TPJ altered mental state attribution for moral judgment. The results indicated that restraining the activity of the right temporoparietal junction (RTPJ or the left the temporoparietal junction (LTPJ decreased the role of beliefs in moral judgments and led to an increase in the dependence of the participants’ moral judgments on the action’s consequences. We also found that the participants exhibited reduced reaction times both in the cases of intentional harms and attempted harms after receiving right cathodal/left anodal tDCS to the TPJ. These findings inform and extend the current neural models of moral judgment and moral development in typically developing people and in individuals with neurodevelopmental disorders such as autism.

Strain dependence of the critical current and critical field in multifilamentary Nb3Sn composites

International Nuclear Information System (INIS)

Ekin, J.W.

1979-01-01

High-J/sub c/ multifilamentary Nb 3 Sn superconductors with widely varying amounts of prestrain and critical field values can be characterized fairly accurately by a single normalized critical field-strain relationship. Such a relationship permits first order prediction of critical-current degradation at arbitrary magnetic field magnitudes with knowledge of only two parameters for any conductor, the prestrain and the maximum critical field. Some of the conductor-fabrication factors affecting the parameters are considered

Critical current properties in superconducting melt processed Y-Ba-Cu-O

International Nuclear Information System (INIS)

Matsushita, Teruo

1993-01-01

The critical current density in bulk superconducting Y-Ba-Cu-O has been remarkably improved by employing the so-called melt process. However, its value is still far below those reported in single-crystalline thin films. Important key factors that determine the critical current density are the flux pinning mechanism and defective structures such as cracks or weak links. In this article, these factors in melt-processed Y-Ba-Cu-O are argued from various measurements of the critical current density on the microstructure dependence, the magnetic field dependence, the temperature dependence, the history effect, the longitudinal field effect and the imaginary ac susceptibility. As for the pinning mechanism, it is concluded that the dominant pinning centers in the high temperature region around 77 K are normal 211 (Y 2 BaCuO 5 ) particles, while small defects such as lattice defects or oxygen deficiencies seem to be dominant in the lower temperature region. It is suggested that much finer normal particles should be introduced in order to improve the critical current density especially at higher temperatures. From the rapid decrease of the critical current density with elevating temperature below 30 K, some kind of weak links are considered to still remain in these materials. However, the observed critical current density did not depend on the history of application of the magnetic field and a large enhancement of the critical current density was observed in the longitudinal field geometry at 4.2 K. These results suggest that the weak links in these materials are of much different kind from those at large angle grain boundaries in sintered polycrystalline materials. From the X-ray diffraction measurements, a domain structure of a mean domain size of about 100 μm was found. These domain boundaries may cause weak links in melt-processed Y-Ba-Cu-O. It is also shown that the typical size of channels of flowing current can be obtained by the imaginary ac susceptibility

Dynamical behavior of RF-biased Josephson junctions (II)

Energy Technology Data Exchange (ETDEWEB)

Xi-Dan, Wang; Xi-Xian, Yao

1985-09-01

Numerical investigations of a differential equation describing a rf-biased Josephson junction, in which the interference term current is included, are carried out in some parameter region. The existence of the intermittant transition to chaos is obtained and the critical exponent of the scaling law is determined in agreement with theoretical predictions. Furthermore, the Lyapunov exponent is calculated for several parameters, then the fractal dimension of strange attractor d/sub L/ is obtained, its dependence on the Lyapunov exponent is defined by Kaplan and Yorke. In addition, the Kolmogorov capacity of strange attractor d/sub c/ is also calculated by box-counting algorithm. Such calculated values of d/sub L/ and d/sub c/ are close to each other as expected.

Electroplated Ni on the PN Junction Semiconductor

Energy Technology Data Exchange (ETDEWEB)

Kim, Jin Joo; Uhm, Young Rang; Son, Kwang Jae; Kim, Jong Bum; Choi, Sang Moo; Park, Jong Han; Hong, Jintae [Korea Atomic Energy Research Institute, Daejeon (Korea, Republic of)

2015-05-15

Nickel (Ni) electroplating was implemented by using a metal Ni powder in order to establish a Ni-63 plating condition on the PN junction semiconductor needed for production of betavoltaic battery. PN junction semiconductors with a Ni seed layer of 500 and 1000 A were coated with Ni at current density from 10 to 50 mA cm{sup 2}. The surface roughness and average grain size of Ni deposits were investigated by XRD and SEM techniques. The roughness of Ni deposit was increased as the current density was increased, and decreased as the thickness of Ni seed layer was increased.

Electroplated Ni on the PN Junction Semiconductor

International Nuclear Information System (INIS)

Kim, Jin Joo; Uhm, Young Rang; Son, Kwang Jae; Kim, Jong Bum; Choi, Sang Moo; Park, Jong Han; Hong, Jintae

2015-01-01

Nickel (Ni) electroplating was implemented by using a metal Ni powder in order to establish a Ni-63 plating condition on the PN junction semiconductor needed for production of betavoltaic battery. PN junction semiconductors with a Ni seed layer of 500 and 1000 A were coated with Ni at current density from 10 to 50 mA cm 2 . The surface roughness and average grain size of Ni deposits were investigated by XRD and SEM techniques. The roughness of Ni deposit was increased as the current density was increased, and decreased as the thickness of Ni seed layer was increased

Single-Molecule Photocurrent at a Metal-Molecule-Semiconductor Junction.

Science.gov (United States)

Vezzoli, Andrea; Brooke, Richard J; Higgins, Simon J; Schwarzacher, Walther; Nichols, Richard J

2017-11-08

We demonstrate here a new concept for a metal-molecule-semiconductor nanodevice employing Au and GaAs contacts that acts as a photodiode. Current-voltage traces for such junctions are recorded using a STM, and the "blinking" or "I(t)" method is used to record electrical behavior at the single-molecule level in the dark and under illumination, with both low and highly doped GaAs samples and with two different types of molecular bridge: nonconjugated pentanedithiol and the more conjugated 1,4-phenylene(dimethanethiol). Junctions with highly doped GaAs show poor rectification in the dark and a low photocurrent, while junctions with low doped GaAs show particularly high rectification ratios in the dark (>10 3 for a 1.5 V bias potential) and a high photocurrent in reverse bias. In low doped GaAs, the greater thickness of the depletion layer not only reduces the reverse bias leakage current, but also increases the volume that contributes to the photocurrent, an effect amplified by the point contact geometry of the junction. Furthermore, since photogenerated holes tunnel to the metal electrode assisted by the HOMO of the molecular bridge, the choice of the latter has a strong influence on both the steady state and transient metal-molecule-semiconductor photodiode response. The control of junction current via photogenerated charge carriers adds new functionality to single-molecule nanodevices.

Magnetic field manipulation of spin current in a single-molecule magnet tunnel junction with two-electron Coulomb interaction

Science.gov (United States)

Zhang, Chao; Yao, Hui; Nie, Yi-Hang; Liang, Jiu-Qing; Niu, Peng-Bin

2018-04-01

In this work, we study the generation of spin-current in a single-molecule magnet (SMM) tunnel junction with Coulomb interaction of transport electrons and external magnetic field. In the absence of field the spin-up and -down currents are symmetric with respect to the initial polarizations of molecule. The existence of magnetic field breaks the time-reversal symmetry, which leads to unsymmetrical spin currents of parallel and antiparallel polarizations. Both the amplitude and polarization direction of spin current can be controlled by the applied magnetic field. Particularly when the magnetic field increases to a certain value the spin-current with antiparallel polarization is reversed along with the magnetization reversal of the SMM. The two-electron occupation indeed enhances the transport current compared with the single-electron process. However the increase of Coulomb interaction results in the suppression of spin-current amplitude at the electron-hole symmetry point. We propose a scheme to compensate the suppression with the magnetic field.

Optical photon detection in Al superconducting tunnel junctions

International Nuclear Information System (INIS)

Brammertz, G.; Peacock, A.; Verhoeve, P.; Martin, D.; Venn, R.

2004-01-01

We report on the successful fabrication of low leakage aluminium superconducting tunnel junctions with very homogeneous and transparent insulating barriers. The junctions were tested in an adiabatic demagnetisation refrigerator with a base temperature of 35 mK. The normal resistance of the junctions is equal to ∼7 μΩ cm 2 with leakage currents in the bias voltage domain as low as 100 fA/μm 2 . Optical single photon counting experiments show a very high responsivity with charge amplification factors in excess of 100. The total resolving power λ/Δλ (including electronic noise) for 500 nm photons is equal to 13 compared to a theoretical tunnel limited value of 34. The current devices are found to be limited spectroscopically by spatial inhomogeneities in the detectors response

Dynamic current susceptibility as a probe of Majorana bound states in nanowire-based Josephson junctions

Science.gov (United States)

Trif, Mircea; Dmytruk, Olesia; Bouchiat, Hélène; Aguado, Ramón; Simon, Pascal

2018-02-01

We theoretically study a Josephson junction based on a semiconducting nanowire subject to a time-dependent flux bias. We establish a general density-matrix approach for the dynamical response of the Majorana junction and calculate the resulting flux-dependent susceptibility using both microscopic and effective low-energy descriptions for the nanowire. We find that the diagonal component of the susceptibility, associated with the dynamics of the Majorana state populations, dominates over the standard Kubo contribution for a wide range of experimentally relevant parameters. The diagonal term, explored, in this Rapid Communication, in the context of Majorana physics, allows probing accurately the presence of Majorana bound states in the junction.

Stress induced degradation of critical currents in filamentary Nb3Sn

International Nuclear Information System (INIS)

McDougall, I.L.

1976-01-01

An investigation of the critical stress and strain values of bronze, Nb 3 Sn composites at 4.2 K has been made with simultaneous determination of critical currents in a field of 2.5 Tesla. Evidence of grain boundary microcrack formation has been found associated with reversible degradation of critical current. At a critical strain characteristic of the composite geometry these cracks propagate to give a GB fracture network. A compound with a small grain size formed at low temperatures has the best mechanical properties with a critical strain to the onset of reversible degradation of about 0.5%. (author)

Microstructural factors influencing critical-current densities of high-temperature superconductors

International Nuclear Information System (INIS)

Suenaga, M.

1992-01-01

Microstructural defects are the primary determining factors for the values of critical current densities in superconductors. A review is made to assess, (1) what would be the maximum achievable critical-current density in the oxide superconductors if nearly ideal pinning sites were introduced? and (2) what types of pinning defects are currently introduced in these superconductors and how effective are these in pinning the vortices? Only the case where the applied field is parallel to the c-axis is considered here

Superconducting digital logic amplifier

International Nuclear Information System (INIS)

Przybysz, J.X.

1989-01-01

This paper describes a superconducting digital logic amplifier for interfacing between a Josephson junction logic circuit having output current and a higher voltage semiconductor circuit input. The amplifier comprising: an input terminal for connection to a; an output terminal for connection to a semiconductor circuit input; an input, lower critical current, Josephson junction having first and second terminals; a first series string of at least three lower critical current Josephson junctions. The first series string being connected to the first terminal of the input Josephson junction such that the first series string is in series with the input Josephson junction to provide a series combination. The input terminal being connected to the first terminal of the input Josephson junction, and with the critical current of the lower critical current Josephson junctions of the input Josephson junction and the first series Josephson junctions being less than the output current of the low voltage Josephson junction circuit; a second series string of at least four higher critical current Josephson junctions. The second string being connected in parallel with the series combination to provide parallel strings having an upper common connection and a lower common connection. The lower common connection being connected to the second terminal of the input Josephson junction and the upper common connection being connected to the output terminal; and a pulsed DC current source connected the parallel strings at the upper common connection. The DC current source having a current at least equal to the critical current of the higher critical current Josephson junctions

Detection of MM.-radiation with high current density submicron niobium-niobium Josephson junctions

International Nuclear Information System (INIS)

Daalmans, G.M.; Graauw, T. de; Lidholm, S.; Vliet, F. v.

1980-01-01

The rf-induced step heights in submicron niobium-niobium Josephson junctions are in good agreement with Russer theory at 230 and 240 GHz. At 115 and 460 GHz the agreement is less but still reasonably good. The junction noise without rf-bias is within a factor of two equal to the theoretical limit. With rf-bias applied it can be equal to the theoretical limit within a factor of two. The maximum conversion efficiency measured at 230 GHz was 0.18 and the lowest single side band mixer noise temperature at the same frequency was 380 K. Saturation effects are limiting the performance of the mixer. Improvements in eta and Tsub(M) of a factor of two can be expected by eliminating these saturation effects. The mixer which has been studied most extensively starting at 12-3-80 is still alive at 5-6-80 after many cooling cycles, storage at room temperature and soldering in and out of the dewar. The reliability of this type of junction cannot be questionable anymore. (orig.)

Fabrication of full high-T sub c superconducting YBa sub 2 Cu sub 3 O sub 7 sub - sub x trilayer junctions using a polishing technique

CERN Document Server

Kuroda, K; Takami, T; Ozeki, T

2003-01-01

We have successfully fabricated full high-T sub c superconducting YBa sub 2 Cu sub 3 O sub 7 sub - sub x (YBCO)/PrBa sub 2 Cu sub 3 O sub 7 sub - sub x (PBCO)/YBCO trilayer junctions, which have a simple device structure, such as a Pb-alloy-based Josephson tunneling junction. It has been demonstrated that a polishing technique is extremely useful in the fabrication process: it is effective in smoothing a coarse surface and gentling the slopes of the edges, or decreasing the slope angles. Owing to the polishing technique, the PBCO barrier layer and the upper YBCO layer have been notably thinned: the thicknesses of these layers are 10 nm and 250 nm, respectively. Junctions with the dimensions of 5 mu m x 5 mu m showed resistively shunted junction-like current-voltage curves with a typical critical current density of 110 A/cm sup 2 at 4.2 K. Furthermore, the operation of superconducting quantum interference devices has been demonstrated. (author)

Internal resonances in periodically modulated long Josephson junctions

DEFF Research Database (Denmark)

Larsen, Britt Hvolbæk; Mygind, Jesper; Ustinov, Alexey V.

1995-01-01

Current-voltage (I-V) characteristics of long Josephson junctions with a periodic lattice of localized inhomogeneities are studied. The interaction between the moving fluxons and the inhomogeneities causes resonant steps in the IV-curve. Some of these steps are due to a synchronization to resonant...... Fiske modes in the sub-junctions formed between the inhomogeneities. The voltage positions of the resonant steps oscillate as function of the applied magnetic field with a period corresponding to the inclusion of one magnetic flux quantum, Φ0=h/2e, per sub-junction. A qualitative explanation that takes...

P-N semiconductor junctions used as X-ray detectors

International Nuclear Information System (INIS)

Pela, C.A.; Bruco, J.L.; Navas, E.A.; Paula, E. de; Guilardi Neto, T.

1987-01-01

The current response of some comercial P-N semiconductor junctions in function of X-ray incidency, in 40 to 140 KVp band used in diagnosis was characterized. Some junctions were also exposed to radiation of 80 to 250 KVp used in therapy. (C.G.C.) [pt

Versatile multi-layer Josephson junction process for vortex molecules

Energy Technology Data Exchange (ETDEWEB)

Meckbach, Johannes Maximilian; Buehler, Simon; Merker, Michael; Il' in, Konstantin; Siegel, Michael [Institut fuer Mikro- und Nanoelektronische Systeme, KIT (Germany); Buckenmaier, Kai; Gaber, Tobias; Kienzle, Uta; Neumaier, Benjamin; Goldobin, Edward; Kleiner, Reinhold; Koelle, Dieter [Physikalisches Institut - Experimentalphysik II, Universitaet Tuebingen (Germany)

2012-07-01

In long Josephson junctions magnetic flux may penetrate the barrier resulting in a so-called Josephson-Vortex carrying one flux quantum Φ{sub 0}. In recent years a new type of Josephson-Vortex became available, which carries any arbitrary fraction Φ = -Φ{sub 0}κ/2π of magnetic flux. These fractional vortices (p-vortices) spontaneously appear at discontinuities of the Josephson phase along the junction, which in turn are created using a pair of current injectors. We present a new Nb/Al-AlO{sub x}/Nb process for the fabrication of Josephson junctions of very high quality. Placing two injector pairs along the strongly underdamped long junctions allows the investigation of fractional vortex molecules. The topological charge of each vortex and their interaction can be altered even during experiment by changing the individual injector currents. Vortex molecule states have been measured using asymmetric DC-SQUIDs coupled to the vortices by overlying pick-up loops. To uphold the p-vortices we use persistent currents, which can be altered using heat switches. Fractional vortex molecules are promising candidates for a new type of qubits.

High-performance DC SQUIDs with submicrometer niobium Josephson junctions

Energy Technology Data Exchange (ETDEWEB)

de Waal, V.J.; Klapwijk, T.M.; van den Hamer, P.

1983-11-01

We report on the fabrication and performance of low-noise, all-niobium, thin-film planar dc SQUIDs with submicrometer Josephson junctions. The junctions are evaporated obliquely through a metal shadow evaporation mask, which is made using optical lithography with 0.5 ..mu..m tolerance. The Josephson junction barrier is formed by evaporating a thin silicon film and with a subsequent oxidation in a glow discharge. The junction parameters can be reproduced within a factor of two. Typical critical currents of the SQUIDs are about 3 ..mu..A and the resistances are about 100 ..cap omega... With SQUIDs having an inductance of 1 nH the voltage modulation is a least 60 ..mu..V. An intrinsic energy resolution of 4 x 10/sup -32/ J/Hz has been reached. The SQUIDs are coupled to wire-wound input coils or with thin-film input coils. The thin-film input coil consists of a niobium spiral of 20 turns on a separate substrate. In both cases the coil is glued onto a 2-nH SQUID with a coupling efficiency of at least 0.5. Referred to the thin-film input coil, the best coupled energy resolution achieved is 1.2 x 10/sup -30/ J/Hz measured in a flux-locked loop at frequencies above 10 Hz. As far as we know, this is the best figure achieved with an all-refractory-metal thin-film SQUID. The fabrication technique used is suited for making circuits with SQUID and pickup coil on the same substrate. We describe a compact, planar, first-order gradiometer integrated with a SQUID on a single substrate. The gradient noise of this device is 3 x 10/sup -12/ Tm/sup -1/. The gradiometer has a size of 12 mm x 17 mm, is simple to fabricate, an is suitable for biomedical applications.

High-performance dc SQUIDs with submicrometer niobium Josephson junctions

Science.gov (United States)

de Waal, V. J.; Klapwijk, T. M.; van den Hamer, P.

1983-11-01

We report on the fabrication and performance of low-noise, all-niobium, thin-film planar dc SQUIDs with submicrometer Josephson junctions. The junctions are evaporated obliquely through a metal shadow evaporation mask, which is made using optical lithography with 0.5 µm tolerance. The Josephson junction barrier is formed by evaporating a thin silicon film and with a subsequent oxidation in a glow discharge. The junction parameters can be reproduced within a factor of two. Typical critical currents of the SQUIDs are about 3 µA and the resistances are about 100 Ω. With SQUIDs having an inductance of 1 nH the voltage modulation is at least 60 µV. An intrinsic energy resolution of 4×10-32 J/Hz has been reached. The SQUIDs are coupled to wire-wound input coils or with thin-film input coils. The thin-film input coil consists of a niobium spiral of 20 turns on a separate substrate. In both cases the coil is glued onto a 2-nH SQUID with a coupling efficiency of at least 0.5. Referred to the thin-film input coil, the best coupled energy resolution achieved is 1.2×10-30 J/Hz measured in a flux-locked loop at frequencies above 10 Hz. As far as we know, this is the best figure achieved with an all-refractory-metal thin-film SQUID. The fabrication technique used is suited for making circuits with SQUID and pickup coil on the same substrate. We describe a compact, planar, first-order gradiometer integrated with a SQUID on a single substrate. The gradient noise of this device is 3×10-12 T m-1. The gradiometer has a size of 12 mm×17 mm, is simple to fabricate, and is suitable for biomedical applications.

Critical unpairing currents in narrow niobium films

International Nuclear Information System (INIS)

Gershenzon, M.E.; Gubankov, V.N.

1979-01-01

Investigated are the dependences of critical currents of narrow ( with the width of W=0.5-15 μm) superconducting niobium films on temperature and a magnetic field. The proposed method of film production with the width of the 1μm order and with small edge inhomogeneities ((<=500 A) permitted to realize the Ginsburg-Landau unpairing currents in the wide range of temperatures. The correct comparison with the theory showed that the unpairing currents are observed if W(< or approximately) 2delta, where delta is the effective depth of the penetration of the perpendicular magnetic field

ALTERNATIVE MATERIALS FOR RAMP-EDGE SNS JUNCTIONS

International Nuclear Information System (INIS)

Jia, Q.; Fan, Y.; Gim, Y.

1999-01-01

We report on the processing optimization and fabrication of ramp-edge high-temperature superconducting junctions by using alternative materials for both superconductor electrodes and normal-metal barrier. By using Ag-doped YBa 2 Cu 3 O 7-x (Ag:YBCO) as electrodes and a cation-modified compound of (Pr y Gd 0.6-y )Ca 0.4 Ba 1.6 La 0.4 Cu 3 O 7 (y = 0.4, 0.5, and 0.6) as a normal-metal barrier, high-temperature superconducting Josephson junctions have been fabricated in a ramp-edge superconductor/normal-metal/superconductor (SNS) configuration. By using Ag:YBCO as electrodes, we have found that the processing controllability /reproducibility and the stability of the SNS junctions are improved substantially. The junctions fabricated with these alternative materials show well-defined RSJ-like current vs voltage characteristics at liquid nitrogen temperature

Linker-dependent Junction Formation Probability in Single-Molecule Junctions

Energy Technology Data Exchange (ETDEWEB)

Yoo, Pil Sun; Kim, Taekyeong [HankukUniversity of Foreign Studies, Yongin (Korea, Republic of)

2015-01-15

We compare the junction formation probabilities of single-molecule junctions with different linker molecules by using a scanning tunneling microscope-based break-junction technique. We found that the junction formation probability varies as SH > SMe > NH2 for the benzene backbone molecule with different types of anchoring groups, through quantitative statistical analysis. These results are attributed to different bonding forces according to the linker groups formed with Au atoms in the electrodes, which is consistent with previous works. Our work allows a better understanding of the contact chemistry in the metal.molecule junction for future molecular electronic devices.

Spin nutation effects in molecular nanomagnet–superconductor tunnel junctions

International Nuclear Information System (INIS)

Abouie, J; Abdollahipour, B; Rostami, A A

2013-01-01

We study the spin nutation effects of a molecular nanomagnet on the Josephson current through a superconductor|molecular nanomagnet|superconductor tunnel junction. We explicitly demonstrate that, due to the spin nutation of the molecular nanomagnet, two oscillatory terms emerge in the ac Josephson current in addition to the conventional ac Josephson current. Some resonances occur in the junction due to the interactions of the transported quasiparticles with the bias voltage and molecular nanomagnet spin dynamics. Their appearance indicates that the energy exchanged during these interactions is in the range of the superconducting energy gap. We also show that the spin nutation is able to convert the ac Josephson current to a dc current, which is interesting for applications. (paper)

Critical currents and fields of disordered nanocrystalline superconductors

International Nuclear Information System (INIS)

Yavary, H.; Shahzamanian, M.A.; Rabbani, H.

2007-01-01

Full text: There is an enormous effort directed at increasing the upper critical field of the superconducting materials because this upper critical field provides a fundamental limit to the maximum field a magnet system can produce. High-energy particle accelerators and medical resonance imaging body scanners are limited by the for NbTi (10 T). Gigahertz class nuclear-magnetic-resonance and high field laboratory magnets are limited by for Nb 3 Sn (23 T) [1]. However, the values of critical current density are too low for industrial use, possibly because of degraded or nonsuperconducting phases, such as MoS 2 or Mo 2 S 3 , at the grain boundaries or because the pinning site density is not high enough. It has long been known that decreasing the grain size of low-temperature superconducting (LTS) materials, such as Nb 3 Sn, increases the density of flux pinning sites and hence. Nanocrystalline materials are characterized by ultrafine grains and a high density of grain boundaries [2]. Hence nanocrystalline materials can exhibit unusual physical, chemical, and mechanical properties with respect to conventional polycrystalline materials. The purpose of this paper is to investigate the structure of currents and fields in disordered nanocrystalline superconducting materials by the use of quasiclassical many body techniques. The Keldish Greens functions are used to calculate the current density of the system. Since the disorder and microstructure of these nanocrystalline materials are on a sufficiently short length scale as to increase both the density of pinning site and the upper critical field. (authors)

Simulations of fine structures on the zero field steps of Josephson tunnel junctions

DEFF Research Database (Denmark)

Scheuermann, M.; Chi, C. C.; Pedersen, Niels Falsig

1986-01-01

Fine structures on the zero field steps of long Josephson tunnel junctions are simulated for junctions with the bias current injected into the junction at the edges. These structures are due to the coupling between self-generated plasma oscillations and the traveling fluxon. The plasma oscillations...... are generated by the interaction of the bias current with the fluxon at the junction edges. On the first zero field step, the voltages of successive fine structures are given by Vn=[h-bar]/2e(2omegap/n), where n is an even integer. Applied Physics Letters is copyrighted by The American Institute of Physics....

Micromagnetic Simulation of Strain-Assisted Current-Induced Magnetization Switching

Directory of Open Access Journals (Sweden)

H. B. Huang

2016-01-01

Full Text Available We investigated the effect of substrate misfit strain on the current-induced magnetization switching in magnetic tunnel junctions by combining micromagnetic simulation with phase-field microelasticity theory. Our results indicate that the positive substrate misfit strain can decrease the critical current density of magnetization switching by pushing the magnetization from out-of-plane to in-plane directions, while the negative strain pushes the magnetization back to the out-of-plane directions. The magnetic domain evolution is obtained to demonstrate the strain-assisted current-induced magnetization switching.

Critical potentials, leptons, and weak currents

International Nuclear Information System (INIS)

Smith, P.F.; Lewin, J.D.

1977-12-01

A theoretical study is made of the interaction of very strong localised electromagnetic potentials with charged leptons, and with the vacuum state. The principal objective is to investigate the phenomena which occur when the potential reaches or exceeds the critical value at which bound levels are drawn into the lower continuum. The behaviour of bound and continuum solutions of the Dirac equation for the specific model of a short range potential well in an arbitrarily large bounded volume is examined in detail. Vacuum polarisation effects are computed by summation over the infinite set of single particle levels, and special attention is given to the behaviour of the overall charge distribution as the potential strength increases through the critical value. The most significant features of the results are (a) the formation of highly localised electron or muon bound states, (b) similar critical potential strengths for electrons and muons, and (c) redefinition of the vacuum by one charge unit at the critical potential. These features are analogous to some properties of leptonic and hadronic weak currents, and the hypothesis is proposed that strong short range potentials may provide a possible mediating mechanism for the weak interaction and also a lepton confinement mechanism within the structure of hadrons. (author)

Spectrum of resonant plasma oscillations in long Josephson junctions

International Nuclear Information System (INIS)

Holst, T.

1996-01-01

An analysis is presented for the amplitude of the plasma oscillations in the zero-voltage state of a long and narrow Josephson tunnel junction. The calculation is valid for arbitrary normalized junction length and arbitrary bias current. The spectrum of the plasma resonance is found numerically as solutions to an analytical equation. The low-frequency part of the spectrum contains a single resonance, which is known to exist also in the limit of a short and narrow junction. Above a certain cutoff frequency, a series of high-frequency standing wave plasma resonances is excited, a special feature of long Josephson junctions. copyright 1996 The American Physical Society

Study of the nonequilibrium state of superconductors by large quasiparticle injection from an external current source

International Nuclear Information System (INIS)

Iguchi, I.

1977-01-01

We have studied the nonequilibrium state of superconductors by injecting large numbers of quasiparticles from an external current source into a superconducting film of a tunnel junction with low tunnel resistance (typically 0.1--1 Ω for junction area approx. = 10 -4 cm 2 ). It was observed that there was a critical tunnel current density at which a voltage appeared locally in the part of a superconducting film confined to the junction area. Its values ranged from 10 2 to 10 3 A/cm 2 for bath temperatures well below T/sub c/. Followed by this voltage onset, a transition region corresponding to the nonequilibrium intermediate resistive state was also observed. For further increase of the tunnel current, the local film resistance developed beyond the value of its normal resistance, suggesting that the nonequilibrium state extends far beyond the voltage onset point. A theory based on the modified Rothwarf-Taylor equations and Parker's T* model is presented to compare with the experimental results. The calculated critical current density yielded almost the same order of magnitude as those found experimentally. The detailed behavior, however, deviates from the theoretical predictions although the film makes a second-order transition in the broad range of temperatures. It is also shown using four-terminal analysis that our observations and those by Wong, Yeh, and Langenberg are essentially the same

On the critical current of ionisation waves in gas discharges

International Nuclear Information System (INIS)

Sato, M.

1982-01-01

Measurement methods for determining the critical current of ionisation waves in gas discharge tubes are examined in detail. The conventional visual method which finds the current at which the waves disappear is erroneous since the criterion, 'observable', depends on the observing conditions. In the rigorous method it is defined as a current at which the linear growth rate of waves is zero. For the measured upper critical (Pupp) current of argon gas, close agreement is found between the results of other workers and those of the present author over a wide range of pressure-radius product 0.3 approximately equal to 60 Torr cm. (author)

Controversial features of granular superconductors studied through the magnetic properties of 2D-Josephson junction arrays

International Nuclear Information System (INIS)

Maluf, W.; Araujo-Moreira, F.M.

2002-01-01

We have shown that the Paramagnetic Meissner Effect (PME) is directly associated with pinning, and not necessarily related to the presence of π-junctions. Through the study of the magnetic properties of two-dimensional Josephson junction arrays (2D-JJA) in the present work we show that, among the systems exhibiting PME, only those with sufficiently low dissipation and high capacitance will show dynamics reentrance. The concept of a critical state and its use in the interpretation of AC magnetization data in terms of a critical current density were introduced to derive the magnetic properties of hard type-II superconductors. In the critical state model proposed by Bean, flux lines penetrate into the sample and, due to the presence of disorder they give rise to a steady flux gradient. Here we show that in 2D-JJA this typical picture is valid only in short-range distances. For long-range distances, the picture of uniform flux fronts, as described by a critical state model, breaks down and the penetration of the magnetic field takes place through the growth of magnetic dendrites. De Gennes originally compared the slope of a pile of vortices to a sand-pile, with the slope being proportional to the local magnitude of the critical current. Dynamical properties of the sand-pile problem have attracted new attention since it consists of a marginally stable system displaying self-organized criticality. In this case, when a superconductor is in the Bean critical state, the addition of vortices occurs by increasing the external magnetic field. This procedure is analogous to the introduction of new grains to a sand-pile and is expected to produce an avalanche of grains of sand (or, equivalently, vortices) of all sizes to maintain a constant gradient in the grain (or, magnetic flux) density. We show in this work strong evidences pointing out that, for some specific conditions, magnetic field penetrates 2D-JJA in flux avalanches. (author)

Microstructure and critical current density in high-Tc metal oxide superconductors

International Nuclear Information System (INIS)

Johnson, S.M.; Gusman, M.I.

1992-03-01

Superconductor powders in the U-Ba-Cu-O (YBCO) and Bi-Pb-Sr-Ca-Cu-O (BSCCO) systems were synthesized by freeze-drying. Powders were characterized, and processed into samples for evaluation of superconducting behavior. Freeze-drying is attractive because the powders have high purity, are homogeneous, have a small size and are active. YBCO powders can be sintered to high density at 890 degrees C. Many compositions, processing approaches and heat treatments were explored in an effort to understand relations between microstructure and critical density, and to improve the critical current density. Powders were also formed into sputtering targets for coating preparation at Stanford University. The highest critical current density achieved with the YBCO powders was ∼15,000 A/cm 2 at 4.2K and 0.5T using powders treated to prevent carbon contamination. The BSCCO materials with the highest critical current density, ∼30,000 A/cm 2 at the same conditions were formed by heat treating melted and quenched samples. All critical current density measurements were made by Stanford University, a subcontractor to this effort. Stanford University also prepared coatings by off-axis magnetron sputtering

Vibrationally coupled electron transport through single-molecule junctions

Energy Technology Data Exchange (ETDEWEB)

Haertle, Rainer

2012-04-26

Single-molecule junctions are among the smallest electric circuits. They consist of a molecule that is bound to a left and a right electrode. With such a molecular nanocontact, the flow of electrical currents through a single molecule can be studied and controlled. Experiments on single-molecule junctions show that a single molecule carries electrical currents that can even be in the microampere regime. Thereby, a number of transport phenomena have been observed, such as, for example, diode- or transistor-like behavior, negative differential resistance and conductance switching. An objective of this field, which is commonly referred to as molecular electronics, is to relate these transport phenomena to the properties of the molecule in the contact. To this end, theoretical model calculations are employed, which facilitate an understanding of the underlying transport processes and mechanisms. Thereby, one has to take into account that molecules are flexible structures, which respond to a change of their charge state by a profound reorganization of their geometrical structure or may even dissociate. It is thus important to understand the interrelation between the vibrational degrees of freedom of a singlemolecule junction and the electrical current flowing through the contact. In this thesis, we investigate vibrational effects in electron transport through singlemolecule junctions. For these studies, we calculate and analyze transport characteristics of both generic and first-principles based model systems of a molecular contact. To this end, we employ a master equation and a nonequilibrium Green's function approach. Both methods are suitable to describe this nonequilibrium transport problem and treat the interactions of the tunneling electrons on the molecular bridge non-perturbatively. This is particularly important with respect to the vibrational degrees of freedom, which may strongly interact with the tunneling electrons. We show in detail that the resulting

Technique of Critical Current Density Measurement of Bulk Superconductor with Linear Extrapolation Method

International Nuclear Information System (INIS)

Adi, Wisnu Ari; Sukirman, Engkir; Winatapura, Didin S.

2000-01-01

Technique of critical current density measurement (Jc) of HTc bulk ceramic superconductor has been performed by using linear extrapolation with four-point probes method. The measurement of critical current density HTc bulk ceramic superconductor usually causes damage in contact resistance. In order to decrease this damage factor, we introduce extrapolation method. The extrapolating data show that the critical current density Jc for YBCO (123) and BSCCO (2212) at 77 K are 10,85(6) Amp.cm - 2 and 14,46(6) Amp.cm - 2, respectively. This technique is easier, simpler, and the use of the current flow is low, so it will not damage the contact resistance of the sample. We expect that the method can give a better solution for bulk superconductor application. Key words. : superconductor, critical temperature, and critical current density

Investigation on Single-Molecule Junctions Based on Current–Voltage Characteristics

Directory of Open Access Journals (Sweden)

Yuji Isshiki

2018-02-01

Full Text Available The relationship between the current through an electronic device and the voltage across its terminals is a current–voltage characteristic (I–V that determine basic device performance. Currently, I–V measurement on a single-molecule scale can be performed using break junction technique, where a single molecule junction can be prepared by trapping a single molecule into a nanogap between metal electrodes. The single-molecule I–Vs provide not only the device performance, but also reflect information on energy dispersion of the electronic state and the electron-molecular vibration coupling in the junction. This mini review focuses on recent representative studies on I–Vs of the single molecule junctions that cover investigation on the single-molecule diode property, the molecular vibration, and the electronic structure as a form of transmission probability, and electronic density of states, including the spin state of the single-molecule junctions. In addition, thermoelectronic measurements based on I–Vs and identification of the charged carriers (i.e., electrons or holes are presented. The analysis in the single-molecule I–Vs provides fundamental and essential information for a better understanding of the single-molecule science, and puts the single molecule junction to more practical use in molecular devices.

Triptycene: A Nucleic Acid Three-Way Junction Binder Scaffold

Science.gov (United States)

Yoon, Ina

Nucleic acids play a critical role in many biological processes such as gene regulation and replication. The development of small molecules that modulate nucleic acids with sequence or structure specificity would provide new strategies for regulating disease states at the nucleic acid level. However, this remains challenging mainly because of the nonspecific interactions between nucleic acids and small molecules. Three-way junctions are critical structural elements of nucleic acids. They are present in many important targets such as trinucleotide repeat junctions related to Huntington's disease, a temperature sensor sigma32 in E. coli, Dengue virus, and HIV. Triptycene-derived small molecules have been shown to bind to nucleic acid three-way junctions, resulting from their shape complementary. To develop a better understanding of designing molecules for targeting different junctions, a rapid screening of triptycene-based small molecules is needed. We envisioned that the installation of a linker at C9 position of the bicyclic core would allow for a rapid solid phase diversification. To achieve this aim, we synthesized 9-substituted triptycene scaffolds by using two different synthetic routes. The first synthetic route installed the linker from the amidation reaction between carboxylic acid at C9 position of the triptycene and an amine linker, beta-alanine ethyl ester. This new 9-substituted triptycene scaffold was then attached to a 2-chlorotrityl chloride resin for solid-phase diversification. This enabled a rapid diversification and an easy purification of mono-, di-, and tri-peptide triptycene derivatives. The binding affinities of these compounds were investigated towards a (CAG)˙(CTG) trinucleotide repeat junction. In the modified second synthetic route, we utilized a combined Heck coupling/benzyne Diels-Alder strategy. This improved synthetic strategy reduced the number of steps and total reaction times, increased the overall yield, improved solubilities of

Self-organization of the critical state in Josephson lattices and granulated superconductors

International Nuclear Information System (INIS)

Ginzburg, S.L.

1994-01-01

A number of models of a Josephson medium and granulated superconductors are studied. It is shown that an important parameter is the quantity V∼j c a 3 /Φ 0 , where j c is the Josephson-current density, a is the granule size, and Φ 0 is the quantum of flux. In the limit V>>1 the continuum approximation is inapplicable. In this case the Josephson medium is transformed into a system in which pinning is realized on elementary loops that incorporate Josephson junctions. Here, nonlinear properties of these junctions obtain. The equations obtained for the currents of the Josephson lattice are identical to the standard formulation in the problem of self-organized criticality, while in granulated superconductors a problem of self-organized criticality with a different symmetry arises-a problem not of sites, but of loop. From the point of view of the critical state in granulated superconductors the concept of self-organized criticality radically changes the entire customary picture. The usual equations of the critical state describe only the average values of the magnetic field in the hydrodynamic approximation. However, it follows from the concept of self-organized criticality that the critical state has an extremely complicated structure, much more complicated than that which follows from the equation of the critical state. In particular, the fluctuations of various quantities in the critical state are much stronger than the ordinary statistical fluctuations, since there are large-scale fluctuations of the currents and fields, with a power-law (scaling) behavior that extends up to scales of the order of the size of the system, as in a turbulent medium. On the other hand, the basic equations in it reflect all the features of pinning - hysteresis and threshold behavior. Therefore, the self-organization of the critical state of a superconductor is a natural realization of this extremely general problem. 15 refs., 4 figs

Colossal X-Ray-Induced Persistent Photoconductivity in Current-Perpendicular-to-Plane Ferroelectric/Semiconductor Junctions

KAUST Repository

Hu, Weijin

2017-12-07

Persistent photoconductivity (PPC) is an intriguing physical phenomenon, where electric conduction is retained after the termination of electromagnetic radiation, which makes it appealing for applications in a wide range of optoelectronic devices. So far, PPC has been observed in bulk materials and thin-film structures, where the current flows in the plane, limiting the magnitude of the effect. Here using epitaxial Nb:SrTiO3/Sm0.1Bi0.9FeO3/Pt junctions with a current-perpendicular-to-plane geometry, a colossal X-ray-induced PPC (XPPC) is achieved with a magnitude of six orders. This PPC persists for days with negligible decay. Furthermore, the pristine insulating state could be fully recovered by thermal annealing for a few minutes. Based on the electric transport and microstructure analysis, this colossal XPPC effect is attributed to the X-ray-induced formation and ionization of oxygen vacancies, which drives nonvolatile modification of atomic configurations and results in the reduction of interfacial Schottky barriers. This mechanism differs from the conventional mechanism of photon-enhanced carrier density/mobility in the current-in-plane structures. With their persistent nature, such ferroelectric/semiconductor heterojunctions open a new route toward X-ray sensing and imaging applications.

Critical currents of variable thickness bridges

International Nuclear Information System (INIS)

Lapir, G.M.; Likharev, K.K.; Maslova, L.A.; Semenov, V.K.

1975-01-01

A variable thickness bridge (VTB) is a short strip of thin normal or superconducting electrodes - 'banks'. This type of weak link has the peculiarity of having the changes of the modulus of the orderparameter localized in the film of the bridge. Only changes of the phase of the orderparameter take place in the banks, and so the electrodynamics of the banks is linear. The problem of the distribution of the linear density of current Jsub(s)(psi) and of the phase difference of the banks psi along the VTB width is considered and the critical current Isub(c) for the important case of a VTB deposited over a superconducting ground plate - 'screen' is calculated. (Auth.)

Distribution of local critical current along sample length and its relation to overall current in a long Bi2223/Ag superconducting composite tape

International Nuclear Information System (INIS)

Ochiai, S; Doko, D; Okuda, H; Oh, S S; Ha, D W

2006-01-01

The distribution of the local critical current and the n-value along the sample length and its relation to the overall critical current were studied experimentally and analytically for the bent multifilamentary Bi2223/Ag/Ag-Mg alloy superconducting composite tape. Then, based on the results, it was attempted to simulate on a computer the dependence of the critical current on the sample length. The main results are summarized as follows. The experimentally observed relation of the distributed local critical current and n-value to the overall critical current was described comprehensively with a simple voltage summation model, in which the sample was regarded as a one-dimensional series circuit. The sample length dependence of the critical current was reproduced on the computer by a Monte Carlo simulation incorporating the voltage summation model and the regression analysis results for the local critical current distribution and the relation of the n-value to the critical current

Self-positioned thin Pb-alloy base electrode Josephson junction

International Nuclear Information System (INIS)

Kuroda, K.; Sato, K.

1986-01-01

A self-positioned thin (SPOT) Pb-alloy base electrode Josephson junction is developed. In this junction, a 50-nm thick Pb-alloy base electrode is restricted within the junction region on an Nb underlayer using a self-alignment technique. The grain size reduction and the base electrode area restriction greatly improve thermal cycling stability, where the thermal cycling tests of 4000 proposed junctions (5 x 5 μm 2 ) showed no failures after 4000 cycles. In addition, the elimination of insulator layer stress on the Pb-alloy base electrode rectifies the problem of size effect on current density. The Nb underlayers also serve to isolate the Pb-alloy base electrodes from the resistors

Quadruple-Junction Thin-Film Silicon-Based Solar Cells

NARCIS (Netherlands)

Si, F.T.

2017-01-01

The direct utilization of sunlight is a critical energy source in a sustainable future. One of the options is to convert the solar energy into electricity using thin-film silicon-based solar cells (TFSSCs). Solar cells in a triple-junction configuration have exhibited the highest energy conversion

Critical current characteristics and history dependence in superconducting SmFeAsOF bulk

International Nuclear Information System (INIS)

Ni, B; Ge, J; Kiuchi, M; Otabe, E S; Gao, Z; Wang, L; Qi, Y; Zhang, X; Ma, Y

2010-01-01

The superconducting SmFeAsO 1-x F x (x=0.2) polycrystalline bulks were prepared by the powder-in-tube (PIT) method. The magnetic field and temperature dependences of critical current densities in the samples were investigated by resistive and ac inductive (Campbell's) methods. It was found that a fairly large shielding current density over 10 9 A/m 2 , which is considered to correspond to the local critical current density, flows locally with the perimeter size similar to the average grain size of the bulk samples, while an extremely low transport current density of about 10 5 A/m 2 corresponding to the global critical current density flows through the whole sample. Furthermore, a unique history dependence of global critical current density was observed, i.e., it shows a smaller value in the increasing-field process than that in the decreasing-field process. The history dependence of global critical current characteristic in our case can be ascribed to the existence of the weak-link property between the grains in SmFeAsO 1-x F x bulk.

Imaging of the dynamic magnetic structure in a parallel array of shunted Josephson junctions

DEFF Research Database (Denmark)

Doderer, T.; Kaplunenko, V. K.; Mygind, Jesper

1994-01-01

A one-dimensional (1D) parallel array of shunted Josephson junctions is one of the basic elements in the family of rapid single-flux quantum logic circuits. It was found recently that current steps always show up in the current-voltage curve of the generator junction when an additional bias current...

Processing and critical currents of high-Tc superconductor wires

International Nuclear Information System (INIS)

Krauth, H.; Heine, K.; Tenbrink, J.

1991-01-01

High-Tc superconductors are expected to have a major impact on magnet and energy technology. For technical applications they have to fulfill the requirement of carrying sufficient current at a critical current density of the order of 10 5 A/cm 2 at operating temperature and magnetic field. At 77 K these values have not been achieved yet in bulk material or wires due to weak link problems and flux creep effects. Progress made so far and remaining problems will be discussed in detail concentrating on problems concerning development of technical wires. In Bi-based materials technically interesting critical current densities could be achieved at 4.2 K in fields above 20 T (1,2), rendering possible the use of such material for very high field application. (orig.)