The results of the irradiations of microstrip detectors for the ATLAS tracker (SCT)

International Nuclear Information System (INIS)

Dervan, P.J.

2003-01-01

The SemiConductor Tracker (SCT) of ATLAS will operate in the Large Hadron Collider (LHC) at CERN, which will reach luminosities of 10 34 cm 2 s -1 . Silicon single-sided microstrip detectors will be used for particle tracking. Due to the proximity to the beam, the silicon detectors need to withstand damage from ionising radiation (10 Mrad total dose) and from non-ionising radiation such as neutrons (2x10 14 1 MeV equivalent neutrons/cm 2 total fluence). The final characteristics of the silicon SCT detectors which are needed to operate under LHC conditions and the conclusions reached after various years of test irradiation studies will be reported. The integration and performance of these detectors in complete SCT modules is also discussed

Assembly and validation of the SSD silicon microstrip detector of ALICE

NARCIS (Netherlands)

de Haas, A.P.; Kuijer, P.G.; Nooren, G.J.L.; Oskamp, C.J.; Sokolov, A.N.; van den Brink, A.

2006-01-01

The Silicon Strip Detector (SSD) forms the two outermost layers of the Inner Tracking System (ITS) of ALICE. The SSD detector consists of 1698 double-sided silicon microstrip modules. The electrical connection between silicon sensor and front-end electronics is made via TAB-bonded

Build-up of the silicon micro-strip detector array in ETF of HIRFL-CSR

International Nuclear Information System (INIS)

Wang Pengfei; Li Zhankui; Li Haixia

2014-01-01

Silicon micro-strip detectors have been widely used in the world-famous nuclear physics laboratories due to their better position resolution and energy resolution. Double-sided silicon micro-strip detectors with a position resolution of 0.5 mm × 0.5 mm, have been fabricated in the IMP (Institute of Modern Physics, CAS) by using microelectronics technology. These detectors have been used in the ETF (External Target Facility) of HIRFL-CSR, as ΔE detectors of the ΔE-E telescope system and the track detectors. With the help of flexibility printed circuit board (FPCB) and the integrated ASIC chips, a compact multi-channel front-end electronic board has been designed to fulfill the acquisition of the energy and position information of the Silicon micro-strip detectors. It is described in this paper that the build-up of the Silicon micro-strip detector array in ETF of HIRFL-CSR, the determination of the energy resolution of the detector units, and the energy resolution of approximately 1% obtained for 5∼9 MeV α particles in vacuum. (authors)

The Silicon Microstrip Sensors of the ATLAS SemiConductor Tracker

CERN Document Server

Ahmad, A; Allport, P P; Alonso, J; Andricek, L; Apsimon, R J; Barr, A J; Bates, R L; Beck, G A; Bell, P J; Belymam, A; Benes, J; Berg, C M; Bernabeu, J; Bethke, S; Bingefors, N; Bizzell, J P; Bohm, J; Brenner, R; Brodbeck, T J; Bruckman De Renstrom, P; Buttar, C M; Campbell, D; Carpentieri, C; Carter, A A; Carter, J R; Charlton, D G; Casse, G-L; Chilingarov, A; Cindro, V; Ciocio, A; Civera, J V; Clark, A G; Colijn, A-P; Costa, M J; Dabrowski, W; Danielsen, K M; Dawson, I; Demirkoz, B; Dervan, P; Dolezal, Z; Dorholt, O; Duerdoth, I P; Dwuznik, M; Eckert, S; Ekelöf, T; Eklund, L; Escobar, C; Fasching, D; Feld, L; Ferguson, D P S; Ferrere, D; Fortin, R; Foster, J M; Fox, H; French, R; Fromant, B P; Fujita, K; Fuster, J; Gadomski, S; Gallop, B J; Garcia, C; Garcia-Navarro, J E; Gibson, M D; Gonzalez, S; Gonzalez-Sevilla, S; Goodrick, M J; Gornicki, E; Green, C; Greenall, A; Grigson, C; Grillo, A A; Grosse-Knetter, J; Haber, C; Handa, T; Hara, K; Harper, R S; Hartjes, F G; Hashizaki, T; Hauff, D; Hessey, N P; Hill, J C; Hollins, T I; Holt, S; Horazdovsky, T; Hornung, M; Hovland, K M; Hughes, G; Huse, T; Ikegami, Y; Iwata, Y; Jackson, J N; Jakobs, K; Jared, R C; Johansen, L G; Jones, R W L; Jones, T J; de Jong, P; Joseph, J; Jovanovic, P; Kaplon, J; Kato, Y; Ketterer, C; Kindervaag, I M; Kodys, P; Koffeman, E; Kohriki, T; Kohout, Z; Kondo, T; Koperny, S; van der Kraaij, E; Kral, V; Kramberger, G; Kudlaty, J; Lacasta, C; Limper, M; Linhart, V; Llosa, G; Lozano, M; Ludwig, I; Ludwig, J; Lutz, G; Macpherson, A; McMahon, S J; Macina, D; Magrath, C A; Malecki, P; Mandic, I; Marti-Garcia, S; Matsuo, T; Meinhardt, J; Mellado, B; Mercer, I J; Mikestikova, M; Mikuz, M; Minano, M; Mistry, J; Mitsou, V; Modesto, P; Mohn, B; Molloy, S D; Moorhead, G; Moraes, A; Morgan, D; Morone, M C; Morris, J; Moser, H-G; Moszczynski, A; Muijs, A J M; Nagai, K; Nakamura, Y; Nakano, I; Nicholson, R; Niinikoski, T; Nisius, R; Ohsugi, T; O'Shea, V; Oye, O K; Parzefall, U; Pater, J R; Pernegger, H; Phillips, P W; Posisil, S; Ratoff, P N; Reznicek, P; Richardson, J D; Richter, R H; Robinson, D; Roe, S; Ruggiero, G; Runge, K; Sadrozinski, H F W; Sandaker, H; Schieck, J; Seiden, A; Shinma, S; Siegrist, J; Sloan, T; Smith, N A; Snow, S W; Solar, M; Solberg, A; Sopko, B; Sospedra, L; Spieler, H; Stanecka, E; Stapnes, S; Stastny, J; Stelzer, F; Stradling, A; Stugu, B; Takashima, R; Tanaka, R; Taylor, G; Terada, S; Thompson, R J; Titov, M; Tomeda, Y; Tovey, D R; Turala, M; Turner, P R; Tyndel, M; Ullan, M; Unno, Y; Vickey, T; Vos, M; Wallny, R; Weilhammer, P; Wells, P S; Wilson, J A; Wolter, M; Wormald, M; Wu, S L; Yamashita, T; Zontar, D; Zsenei, A

2007-01-01

This paper describes the AC-coupled, single-sided, p-in-n silicon microstrip sensors used in the SemiConductor Tracker (SCT) of the ATLAS experiment at the CERN Large Hadron Collider (LHC). The sensor requirements, specifications and designs are discussed, together with the qualification and quality assurance procedures adopted for their production. The measured sensor performance is presented, both initially and after irradiation to the fluence anticipated after 10 years of LHC operation. The sensors are now successfully assembled within the detecting modules of the SCT, and the SCT tracker is completed and integrated within the ATLAS Inner Detector. Hamamatsu Photonics Ltd supplied 92.2% of the 15,392 installed sensors, with the remainder supplied by CiS.

Systematic characterization and quality assurance of silicon micro-strip sensors for the Silicon Tracking System of the CBM experiment

Science.gov (United States)

Ghosh, P.

2014-07-01

The Silicon Tracking System (STS) is the central detector of the Compressed Baryonic Matter (CBM) experiment at future Facility for Anti-proton and Ion Research (FAIR) at Darmstadt. The task of the STS is to reconstruct trajectories of charged particles originating at relatively high multiplicities from the high rate beam-target interactions. The tracker comprises of 300 μm thick silicon double-sided micro-strip sensors. These sensors should be radiation hard in order to reconstruct charged particles up to a maximum radiation dose of 1 × 1014neqcm-2. Systematic characterization allows us to investigate the sensor response and perform quality assurance (QA) tests. In this paper, systematic characterization of prototype double-sided silicon micro-strip sensors will be discussed. This procedure includes visual, passive electrical, and radiation hardness test. Presented results include tests on three different prototypes of silicon micro-strip sensors.

Systematic characterization and quality assurance of silicon micro-strip sensors for the Silicon Tracking System of the CBM experiment

International Nuclear Information System (INIS)

Ghosh, P

2014-01-01

The Silicon Tracking System (STS) is the central detector of the Compressed Baryonic Matter (CBM) experiment at future Facility for Anti-proton and Ion Research (FAIR) at Darmstadt. The task of the STS is to reconstruct trajectories of charged particles originating at relatively high multiplicities from the high rate beam-target interactions. The tracker comprises of 300 μm thick silicon double-sided micro-strip sensors. These sensors should be radiation hard in order to reconstruct charged particles up to a maximum radiation dose of 1 × 10 14 n eq cm −2 . Systematic characterization allows us to investigate the sensor response and perform quality assurance (QA) tests. In this paper, systematic characterization of prototype double-sided silicon micro-strip sensors will be discussed. This procedure includes visual, passive electrical, and radiation hardness test. Presented results include tests on three different prototypes of silicon micro-strip sensors

Quality assurance of the silicon microstrip sensors for the CBM experiment

Energy Technology Data Exchange (ETDEWEB)

Panasenko, Iaroslav [Physikalisches Institut, Universitaet Tuebingen (Germany); Institute for Nuclear Research, Kiev (Ukraine); Larionov, Pavel [University of Frankfurt (Germany); Collaboration: CBM-Collaboration

2016-07-01

The CBM experiment at FAIR will investigate the properties of nuclear matter at extreme conditions created in ultrarelativistic heavy-ion collisions. Its core detector - the Silicon Tracking System (STS) - will determine the momentum of charged particles from beam-target interactions. The track multiplicity will reach up to 700 within the detector aperture covering the polar angle 2.5 and 25 . High track density as well as stringent requirements to the momentum resolution (∝1%) require a system with high channel granularity and low material budget. The STS will be constructed of about 1200 double-sided silicon microstrip sensors with 58 μm pitch and a total area of ∝4 m{sup 2} with all together 2.1 million channels will be read out. In this talk the quality assurance of double-sided silicon microstrip sensors is discussed. This includes both visual and electrical characterization. For this purpose dedicated equipment has been set up in the clean rooms of the GSI Detector Laboratory and at Tuebingen University. Results of the electrical characterization of prototype microstrip sensors CBM06 are presented.

Silicon microstrip detectors on 6'' technology

CERN Document Server

Bölla, G; Günther, M; Martignon, G; Bacchetta, N; Bisello, D; Leonardi, G L; Lucas, T; Wilburn, C

1999-01-01

The fabrication of microstrip detectors on 4'' high-resistivity wafers that allow for a maximum workable area of about 42 cm sup 2 has been well established. Using 6'' wafers the workable area increases up to 100 cm sup 2 (more than twice the area of a 4'' wafer) allowing a larger number of detectors to be processed at the same time on the same wafer resulting in a sizable reduction of cost. After a prototyping stage, the CDF silicon tracker upgrade is now receiving final production sensors from Micron Semiconductor Ltd. The performance of double-sided single-metal small stereo angle sensors for the CDF SVXII and ISL detectors has been studied. Results include probe station measurements and test beam results. The problems encountered from prototyping to the final devices are described. A brief overview of the response of the sensors to irradiation with gamma-rays and p sup + up to a dose of 0.5 Mrad (well above the doses expected during Run II of the Tevatron) is included. (author)

Design, characterization and beam test performance of different silicon microstrip detector geometries

International Nuclear Information System (INIS)

Catacchini, E.; Ciampolini, L.; Civinini, C.; D'Alessandro, R.; Focardi, E.; Lenzi, M.; Meschini, M.; Parrini, G.; Pieri, M.

1998-01-01

During the last few years a large number of silicon microstrip detectors has been especially designed and tested in order to study and optimize the performances of the tracking devices to be used in the forward-backward part of the CMS (technical proposal, CERN/LHCC 94-38 LHCC/Pl, 15 December 1994) experiment. Both single and double sided silicon detectors of a trapezoidal ('wedge') shape and with different strip configurations, including prototypes produced with double metal technology, were characterized in the laboratory and tested using high-energy beams. Furthermore, due to the high-radiation environment where the detectors should operate, particular care was devoted to the study of the characteristics of heavily irradiated detectors. The main results of detector performances (charge response, signal-to-noise ratio, spatial resolution etc.) will be reviewed and discussed. (author)

ATLAS Silicon Microstrip Tracker Operation and Performance

CERN Document Server

Yamada, M; The ATLAS collaboration

2011-01-01

The SemiConductor Tracker (SCT), comprising of silicon micro-strip detectors is one of the key precision tracking devices in the ATLAS Inner Detector. ATLAS is one of the experiments at CERN LHC. The completed SCT is in very good shapes with 99.3% of the SCT’s 4088 modules (a total of 6.3 million strips) are operational. The noise occupancy and hit efficiency exceed the design specifications. In the talk the current status of the SCT will be reviewed. We will report on the operation of the detector, its performance and observed problems, with stress on the sensor and electronics performance. In December 2009 the ATLAS experiment at the CERN Large Hadron Collider (LHC) recorded the first proton-proton collisions at a centre-of-mass energy of 900 GeV and this was followed by the unprecedented energy of 7 TeV in March 2010. The Semi-Conductor Tracker (SCT) is the key precision tracking device in ATLAS, made from silicon micro-strip detectors processed in the planar p-in-n technology. The signals from the strip...

Characterisation of an inhomogeneously irradiated microstrip detector using a fine spot infrared laser

CERN Document Server

Casse, G; Bowcock, T J V; Greenall, A; Phillips, JP; Turner, PR; Wright, V

2001-01-01

A prototype silicon microstrip detector for the LHCb vertex locator (VELO) has been partially irradiated using a 24 GeV/c proton beam at the CERN-PS accelerator. The detector possesses a radial strip geometry designed to measure the azimuthal coordinate (Phi) of tracks within the VELO. The peak fluence received by the detector was measured to be 4.6×10 14 p/cm 2 though the non-uniform nature of the exposure left part of the detector unirradiated. The inhomogeneous irradiation introduced a damage profile in the detector approximating to that expected in the VELO. High irradiation gradients are important to study as they can modify the electric field within the silicon. Of special interest are changes in the component of the electric field parallel to the strip plane but perpendicular to the strips which lead to systematic shifts in the reconstructed cluster position. If these (flux and position dependent) shifts are sufficiently large they could contribute to a degraded spatial resolution of the detector. In ...

ATLAS Silicon Microstrip Tracker Operation and Performance

CERN Document Server

Rosendahl, P L; The ATLAS collaboration

2012-01-01

The Semi-Conductor Tracker (SCT) is a silicon microstrip detector part of the ATLAS experiment at the CERN Large Hadron Collider (LHC). Together with the rest for the ATLAS Inner Detector (ID) it provides vital precision tracking information of charged particles. In this paper the performance and operational status of the SCT in the last two years of ATLAS data taking are reviewed.

The silicon microstrip sensors of the ATLAS semiconductor tracker

Czech Academy of Sciences Publication Activity Database

Ahmad, A.; Albrechtskirchinger, Z.; Allport, P.; Böhm, Jan; Mikeštíková, Marcela; Šťastný, Jan

2007-01-01

Roč. 578, - (2007), s. 98-118 ISSN 0168-9002 Institutional research plan: CEZ:AV0Z10100502 Keywords : ATLAS * SCT * silicon * microstrip * module * LHC Subject RIV: BF - Elementary Particles and High Energy Physics Impact factor: 1.114, year: 2007

Use of silicon microstrip detectors in medical diagnostic x-rays

International Nuclear Information System (INIS)

Cabal Rodriguez, Ana Ester

2004-11-01

This work presents the development and characterization of a single photon counting system based on silicon microstrip detectors, used in High Energy Physics experiments, and on low noise multichannel readout electronics. The thesis evaluates the feasibility of dual energy X-ray imaging with silicon microstrip detectors to be applied on medical diagnosis. Dual energy mammographic and angiographic experimental tests have been performed using the developed counting systems proto types, properly phantoms and quasi-monochromatic X ray beams, obtained on a compact dichromatic source based on a conventional X-ray tube and a mosaic crystal. A Monte Carlo simulation of the performance of the experimental setup for dual X-ray imaging has also been carried out using MCNP-4C transport code. We obtained good agreement between MCNP results and the experimental data. (Author)

Dismantling the silicon microstrip detector on L3

CERN Multimedia

Laurent Guiraud

2001-01-01

The silicon microstrip detector is located at the heart of the detector and must be kept cool to prevent thermal noise. The work shown here is the removal of the cooling system. L3 was dismantled as part of the closure of the entire LEP accelerator in 2000 to make way for the new LHC.

Charge collection efficiency and resolution of an irradiated double-sided silicon microstrip detector operated at cryogenic temperatures

International Nuclear Information System (INIS)

Borer, K.; Janos, S.; Palmieri, V.G.; Buytaert, J.; Chabaud, V.; Chochula, P.; Collins, P.; Dijkstra, H.; Niinikoski, T.O.; Lourenco, C.; Parkes, C.; Saladino, S.; Ruf, T.; Granata, V.; Pagano, S.; Vitobello, F.; Bell, W.; Bartalini, P.; Dormond, O.; Frei, R.; Casagrande, L.; Bowcock, T.; Barnett, I.B.M.; Da Via, C.; Konorov, I.; Paul, S.; Schmitt, L.; Ruggiero, G.; Stavitski, I.; Esposito, A.

2000-01-01

This paper presents results on the measurement of the cluster shapes, resolution and charge collection efficiency of a double-sided silicon microstrip detector after irradiation with 24 GeV protons to a fluence of 3.5x10 14 p/cm 2 and operated at cryogenic temperatures. An empirical model is presented which describes the expected cluster shapes as a function of depletion depth, and is shown to agree with the data. It is observed that the clusters on the p-side broaden if the detector is under-depleted, leading to a degradation of resolution and efficiency. The model is used to make predictions for detector types envisaged for the LHC experiments. The results also show that at cryogenic temperature the charge collection efficiency varies depending on the operating conditions of the detector and can reach values of 100% at unexpectedly low bias voltage. By analysing the cluster shapes it is shown that these variations are due to changes in depletion depth. This phenomenon, known as the 'Lazarus effect', can be related to similar recent observations on diode behaviour

Characterization and spice simulation of a single-sided, p+ on n silicon microstrip detector before and after low-energy photon irradiation

Energy Technology Data Exchange (ETDEWEB)

Zhang, Jiaguo; Klanner, Robert; Fretwurst, Eckhart [Institute for Experimental Physics, Detector Laboratory, University of Hamburg, Hamburg 22761 (Germany)

2010-07-01

As preparation for the development of silicon detectors for the harsh radiation environment at the European XFEL (up to 1 GGY 12 keV X-rays) p{sup +} on n silicon microstrip detectors were characterized as function of dose. The measurements, which include dark current, coupling capacitance, interstrip capacitance and interstrip resistance, are compared to a detailed SPICE model, so that the performance for particle detection can be estimated.

ATLAS silicon microstrip detector system (SCT)

International Nuclear Information System (INIS)

Unno, Y.

2003-01-01

The S CT together with the pixel and the transition radiation tracker systems and with a central solenoid forms the central tracking system of the ATLAS detector at LHC. Series production of SCT Silicon microstrip sensors is near completion. The sensors have been shown to be robust against high voltage operation to the 500 V required after fluences of 3x10 14 protons/cm 2 . SCT barrel modules are in series production. A low-noise CCD camera has been used to debug the onset of leakage currents

Degradation of silicon AC-coupled microstrip detectors induced by radiation

Science.gov (United States)

Bacchetta, N.; Bisello, D.; Canali, C.; Fuochi, P. G.; Gotra, Y.; Paccagnella, A.; Verzellesi, G.

1993-12-01

Results are presented showing the radiation response of AC-coupled FOXFET biased microstrip detectors and related test patterns to be used in the microvertex detector of the CDF experiment at Fermi National Laboratory. Radiation tolerance of detectors to gamma and proton irradiation has been tested, and the radiation-induced variations of the DC electrical parameters have been analyzed. The long-term postirradiation behavior of detector characteristics has been studied, and the relevant room-temperature annealing phenomena have been examined. The main radiation damage effects after gamma or proton irradiation of FOXFET biased microstrip detectors consist of an increase in the total leakage current, while both the detector dynamic resistance and FOXFET switching voltage decrease.

Characterization procedures for double-sided silicon microstrip detectors

Energy Technology Data Exchange (ETDEWEB)

Bruner, N.L. [New Mexico Univ., Albuquerque, NM (United States). New Mexico Center for Particle Phys.; Frautschi, M.A. [New Mexico Univ., Albuquerque, NM (United States). New Mexico Center for Particle Phys.; Hoeferkamp, M.R. [New Mexico Univ., Albuquerque, NM (United States). New Mexico Center for Particle Phys.; Seidel, S.C. [New Mexico Univ., Albuquerque, NM (United States). New Mexico Center for Particle Phys.

1995-08-15

Since double-sided silicon microstrip detectors are still evolving technologically and are not yet commercially available, they require extensive electrical evaluation by the user to ensure they were manufactured to specifications. In addition, measurements must be performed to determine detector operating conditions. Procedures for measuring the following quantities are described: - Leakage current, - Depletion voltage, - Bias resistance, - Interstrip resistance, - Coupling capacitance, - Coupling capacitor breakdown voltage. (orig.).

Characterization procedures for double-sided silicon microstrip detectors

International Nuclear Information System (INIS)

Bruner, N.L.; Frautschi, M.A.; Hoeferkamp, M.R.; Seidel, S.C.

1995-01-01

Since double-sided silicon microstrip detectors are still evolving technologically and are not yet commercially available, they require extensive electrical evaluation by the user to ensure they were manufactured to specifications. In addition, measurements must be performed to determine detector operating conditions. Procedures for measuring the following quantities are described: - Leakage current, - Depletion voltage, - Bias resistance, - Interstrip resistance, - Coupling capacitance, - Coupling capacitor breakdown voltage. (orig.)

The bipolar silicon microstrip detector: A proposal for a novel precision tracking device

International Nuclear Information System (INIS)

Horisberger, R.

1990-01-01

It is proposed to combine the technology of fully depleted microstrip detectors fabricated on n doped high resistivity silicon with the concept of the bipolar transistor. This is done by adding a n ++ doped region inside the normal p + implanted region of the reverse biased p + n diode. The resulting structure has amplifying properties and is referred to as bipaolar pixel transistor. The simplest readout scheme of a bipolar pixel array by an aluminium strip bus leads to the bipolar microstrip detector. The bipolar pixel structure is expected to give a better signal-to-noise performance for the detection of minimum ionizing charged particle tracks than the normal silicon diode strip detector and therefore should allow in future the fabrication of thinner silicon detectors for precision tracking. (orig.)

Radiation hard silicon microstrip detectors for use in ATLAS at CERN

Energy Technology Data Exchange (ETDEWEB)

Johansen, Lars Gimmestad

2005-07-01

The Large Hadron Collider (LHC) at CERN (Geneva, Switzerland) will accelerate protons in colliding beams to a center of mass energy of 14 TeV at very high luminosities. The ATLAS detector is being built to explore the physics in this unprecedented energy range. Tracking of charged particles in high-energy physics (HEP) experiments requires a high spatial resolution and fast signal readout, all with as little material as possible. Silicon microstrip detectors meet these requirements well and have been chosen for the Semiconductor Tracker (SCT) which is part of the inner tracking system of ATLAS and has a total area of 61 m2. During the 10 years of operation at LHC, the total fluence received by the detectors is sufficiently large that they will suffer a severe degradation from radiation induced damage. The damage affects both the physics performance of the detectors as well as their operability and a great challenge has been to develop radiation hard detectors for this environment. An extensive irradiation programme has been carried out where detectors of various designs, including defect engineering by oxygen enriched silicon, have been irradiated to the expected fluence. A subsequent thermal annealing period is included to account for a realistic annual maintenance schedule at room temperature, during which the radiation induced defects alter the detector properties significantly. This thesis presents work that has been carried out in the Bergen ATLAS group with results both from the irradiation programme and from detector testing during the module production. (Author)

Radiation hard silicon microstrip detectors for use in ATLAS at CERN

International Nuclear Information System (INIS)

Johansen, Lars Gimmestad

2005-06-01

The Large Hadron Collider (LHC) at CERN (Geneva, Switzerland) will accelerate protons in colliding beams to a center of mass energy of 14 TeV at very high luminosities. The ATLAS detector is being built to explore the physics in this unprecedented energy range. Tracking of charged particles in high-energy physics (HEP) experiments requires a high spatial resolution and fast signal readout, all with as little material as possible. Silicon microstrip detectors meet these requirements well and have been chosen for the Semiconductor Tracker (SCT) which is part of the inner tracking system of ATLAS and has a total area of 61 m2. During the 10 years of operation at LHC, the total fluence received by the detectors is sufficiently large that they will suffer a severe degradation from radiation induced damage. The damage affects both the physics performance of the detectors as well as their operability and a great challenge has been to develop radiation hard detectors for this environment. An extensive irradiation programme has been carried out where detectors of various designs, including defect engineering by oxygen enriched silicon, have been irradiated to the expected fluence. A subsequent thermal annealing period is included to account for a realistic annual maintenance schedule at room temperature, during which the radiation induced defects alter the detector properties significantly. This thesis presents work that has been carried out in the Bergen ATLAS group with results both from the irradiation programme and from detector testing during the module production. (Author)

Spatial resolution of wedge shaped silicon microstrip detectors

International Nuclear Information System (INIS)

Anticic, T.; Barnett, B.; Blumenfeld, B.; Chien, C.Y.; Fisher, P.; Gougas, A.; Krizmanic, J.; Madansky, L.; Newman, D.; Orndorff, J.; Pevsner, A.; Spangler, J.

1995-01-01

Several wedge-shaped silicon microstrip detectors with pitches from 30 to 100 μm have been designed by our group and beam tested at the CERN SPS. We find the spatial resolution σ becomes larger at the rate of 0.21 μm per 1 μm increase in pitch, but the number of strips per cluster remains about the same as the pitch varies from 30 to 100 μm. (orig.)

ATLAS Silicon Microstrip Tracker Operation and Performance

CERN Document Server

Chalupkova, I; The ATLAS collaboration

2012-01-01

The Semi-Conductor Tracker (SCT) is a silicon strip detector and one of the key precision tracking devices in the Inner Detector of the ATLAS experiment at CERN LHC. The SCT is constructed of 4088 silicon detector modules for a total of 6.3 million strips. Each module is designed, constructed and tested to operate as a stand-alone unit, mechanically, electrically, optically and thermally. The modules are mounted into two types of structures: one barrel (4 cylinders) and two end-cap systems (9 disks on each end of the barrel). The SCT silicon micro-strip sensors are processed in the planar p-in-n technology. The signals from the strips are processed in the front-end ASICS ABCD3TA, working in the binary readout mode. Data is transferred to the off-detector readout electronics via optical fibers. The completed SCT has been installed inside the ATLAS experimental cavern since 2007 and has been operational since then. Calibration data has been taken regularly and analyzed to determine the noise performance of the ...

ATLAS Silicon Microstrip Tracker Operation and Performance

CERN Document Server

NAGAI, K; The ATLAS collaboration

2012-01-01

The Semi-Conductor Tracker (SCT) is a silicon strip detector and one of the key precision tracking devices in the Inner Detector of the ATLAS experiment at CERN LHC. The SCT is constructed of 4088 silicon detector modules for a total of 6.3 million strips. Each module is designed, constructed and tested to operate as a stand-alone unit, mechanically, electrically, optically and thermally. The modules are mounted into two types of structures: one barrel (4 cylinders) and two end-cap systems (9 disks on each end of the barrel). The SCT silicon micro-strip sensors are processed in the planar p-in-n technology. The signals from the strips are processed in the front-end ASICS ABCD3TA, working in the binary readout mode. Data is transferred to the off-detector readout electronics via optical fibres. The completed SCT has been installed inside the ATLAS experimental cavern since 2007 and has been operational since then. Calibration data has been taken regularly and analysed to determine the noise performance of the ...

ATLAS Silicon Microstrip Tracker Operation and Performance

CERN Document Server

Chalupkova, I; The ATLAS collaboration

2012-01-01

The Semi-Conductor Tracker (SCT) is a silicon strip detector and one of the key precision tracking devices in the Inner Detector (ID) of the ATLAS experiment at CERN LHC. The SCT is constructed of 4088 silicon detector modules with a total of 6.3 million strips. Each module is designed, constructed and tested to operate as a stand-alone unit, mechanically, electrically, optically and thermally. The modules are mounted into two types of structures: one barrel (4 cylinders) and two end-cap systems (9 disks on each side of the barrel). The SCT silicon microstrip sensors are processed in the planar p-in-n technology. The signals from the strips are processed in the front-end ASICs ABCD3TA, working in the binary readout mode. Data is transferred to the off-detector readout electronics via optical fibres. SCT has been installed inside the ATLAS experimental cavern since 2007 and has been operational ever since. Calibration data has been taken regularly and analysed to determine the noise performance of the system. ...

ATLAS Silicon Microstrip Tracker Operation and Performance

CERN Document Server

Yamada, M; The ATLAS collaboration

2011-01-01

The SemiConductor Tracker (SCT), comprising of silicon micro-strip detectors is one of the key precision tracking devices in the ATLAS Inner Detector. ATLAS is one of the experiments at CERN LHC. The completed SCT is in very good shapes with 99.3% of the SCT’s 4088 modules (a total of 6.3 million strips) are operational. The noise occupancy and hit efficiency exceed the design specifications. In the talk the current status of the SCT will be reviewed. We will report on the operation of the detector, its performance and observed problems, with stress on the sensor and electronics performance.

Measurements on irradiated L1 sensor prototypes for the D0 Run IIb silicon detector project

International Nuclear Information System (INIS)

Ahsan, M.; Bolton, T.; Carnes, K.; Demarteau, M.; Demina, R.; Gray, T.; Korjenevski, S.; Lehner, F.; Lipton, R.; Mao, H.S.; McCarthy, R.

2010-01-01

We report on irradiation studies of Hamamatsu prototype silicon microstrip detectors for layer 1 of the D0 upgrade project for Run IIb. The irradiation was carried out with 10 MeV protons up to proton fluence of 10 14 p/cm 2 at the J.R. Macdonald Laboratory, Manhatten, KS. The flux calibration was carefully checked using different dose normalization techniques. The results based on the obtained sensor leakage currents after irradiation show that the NIEL scaling hypothesis for low energy protons has to be applied with great care. We observe 30-40% less radiation damage in silicon for 10 MeV proton exposure than is expected from the predicted NIEL scaling.

Measurements on irradiated L1 sensor prototypes for the D0 Run IIb silicon detector project

Energy Technology Data Exchange (ETDEWEB)

Ahsan, M.; Bolton, T.; Carnes, K.; /Kansas State U.; Demarteau, M.; /Fermilab; Demina, R.; /Rochester U.; Gray, T.; /Kansas State U.; Korjenevski, S.; /Rochester U.; Lehner, F.; /Zurich U.; Lipton, R.; Mao, H.S.; /Fermilab; McCarthy, R.; /SUNY, Stony Brook /Kansas State U. /Fermilab

2010-01-01

We report on irradiation studies of Hamamatsu prototype silicon microstrip detectors for layer 1 of the D0 upgrade project for Run IIb. The irradiation was carried out with 10 MeV protons up to proton fluence of 10{sup 14} p/cm{sup 2} at the J.R. Macdonald Laboratory, Manhatten, KS. The flux calibration was carefully checked using different dose normalization techniques. The results based on the obtained sensor leakage currents after irradiation show that the NIEL scaling hypothesis for low energy protons has to be applied with great care. We observe 30-40% less radiation damage in silicon for 10 MeV proton exposure than is expected from the predicted NIEL scaling.

Microstrip detector for the ALICE experiment

CERN Multimedia

Laurent Guiraud

1996-01-01

This photo shows a close up of one of the silicon microstrip detectors that will be installed on the ALICE experiment at the LHC. 1698 double-sided modules of these silicon microstrips will be installed in the two outermost layers of the ALICE inner tracking system. The microstrips have to be specially designed to withstand the high resolution levels at the heart of the detector.

Gas microstrip detectors on polymer, silicon and glass substrates

International Nuclear Information System (INIS)

Barasch, E.F.; Demroff, H.P.; Drew, M.M.; Elliott, T.S.; Gaedke, R.M.; Goss, L.T.; Kasprowicz, T.B.; Lee, B.; Mazumdar, T.K.; McIntyre, P.M.; Pang, Y.; Smith, D.D.; Trost, H.J.; Vanstraelen, G.; Wahl, J.

1993-01-01

We present results on the performance of Gas Microstrip Detectors on various substrates. These include a 300 μm anode-anode pitch pattern on Tempax borosilicate glass and ABS/copolyether, a 200 μm pattern on Upilex ''S'' polyimide, Texin 4215, Tedlar, ion-implanted Kapton, orientation-dependent etched flat-topped silicon (''knife-edge chamber''), and iron-vanadium glass, and a 100 μm pitch pattern on Upilex ''S'' and ion-implanted Kapton. (orig.)

Development of Microstrip Silicon Detectors for Star and ALICE

CERN Document Server

Arnold, L; Coffin, J P; Guillaume, G; Guthneck, L; Higueret, S; Hundt, F; Kühn, C E; Lutz, Jean Robert; Pozdniakov, S; Rami, F; Tarchini, A; Boucham, A; Bouvier, S; Erazmus, B; Germain, M; Giliberto, S; Martin, L; Le Moal, C; Roy, C; Colledani, C; Dulinski, W; Turchetta, R

1998-01-01

The physics program of STAR and ALICE at ultra-relativistic heavy ion colliders, RHIC and LHC respectively, requires very good tracking capabilities. Some specific quark gluon plasma signatures, based on strange matter measurements implies quite a good secondary vertex reconstruction.For this purpose, the inner trackers of both experiments are composed of high-granularity silicon detectors. The current status of the development of double-sided silicon microstrip detectors is presented in this work.The global performance for tracking purpose adn particle identification are first reviewed. Then tests of the detectors and of the associated readout electronics are described. In-beam measurements of noise, spatial resolution, efficiency and charge matching capability, as well as radiation hardness, are examined.

Cross-talk studies on FPCB of double-sided silicon micro-strip detector

International Nuclear Information System (INIS)

Yang, Lei; Li, Zhankui; Li, Haixia; Wang, Pengfei; Wang, Zhusheng; Chen, Cuihong; Liu, Fengqiong; Li, Ronghua; Wang, Xiuhua; Li, Chunyan; Zu, Kailing

2014-01-01

Double-sided silicon micro-strip detector's parameters and a test method and the results of cross-talk of FPCB are given in this abstract. In addition, the value of our detector's readout signal has little relation to FPCB's cross-talk.

ATLAS silicon microstrip Semiconductor Tracker (SCT)

International Nuclear Information System (INIS)

Unno, Y.

2000-01-01

Silicon microstrip semiconductor tracking system (SCT) will be in operation in the ATLAS detector in the Large Hadron Collider (LHC) at CERN. Challenging issues in the SCT are the radiation tolerance to the fluence of 2x10 14 1-MeV-neutron-equivalent particles/cm 2 at the designed luminosity of 1x10 34 cm -2 /s of the proton-proton collisions and the speed of the electronics to identify the crossing bunches at 25 ns. The developments and the status of the SCT are presented from the point of view of these issues. Series production of the SCT will start in the year 2001 and the SCT will be installed into the ATLAS detector during 2003-2004

Performance of a silicon microstrip detector in a high radiation environment

International Nuclear Information System (INIS)

Mishra, C.S.; Brown, C.N.; Kapustinsky, J.; Leitch, M.J.; McGaughey, P.L.; Peng, J.C.; Sailor, W.; Holzscheiter, K.; Sadler, M.

1990-01-01

This paper reports on the performance of a silicon microstrip detector that has been studied in a high rate environment using electron, pion, and proton beams. The pulse height, time response, and leakage current have been studied as a function of particle fluence up to a total integrated flus of about 4 x 10 14 protons/cm 2

Design and development of a vertex reconstruction for the CMS (Compact Muon Solenoid) data. Study of gaseous and silicon micro-strips detectors (MSGC)

International Nuclear Information System (INIS)

Moreau, St.

2002-12-01

The work presented in this thesis has contributed to the development of the Compact Muon Solenoid detector (CMS) that will be installed at the future Large Hadron Collider (LHC) which will start running in summer 2007. This report is organised in three parts: the study of gaseous detectors and silicon micro-strips detectors, and a development of a software for the reconstruction and analysis of CMS data in the framework of ORCA. First, the micro-strips gaseous detectors (MSGC) study was on the ultimate critical irradiation test before their substitution in the CMS tracker. This test showed a really small number of lost anodes and a stable signal to noise ratio. This test proved that the described MSGC fulfill all the requirements to be integrated in the CMS tracker. The following contribution described a study of silicon micro-strips detectors and its electronics exposed to a 40 MHz bunched LHC like beam. These tests indicated a good behaviour of the data acquisition and control system. The signal to noise ratio, the bunch crossing identification and the cluster finding efficiency had also be analysed. The last study concern the design and the development of an ORCA algorithm dedicates to secondary vertex reconstruction. This iterative algorithm aims to be use for b tagging. This part analyse also primary vertex reconstruction in events without and with pile up. (author)

Performance characteristics and radiation damage results from the Fermilab E706 silicon microstrip detector system

Energy Technology Data Exchange (ETDEWEB)

Engels, E Jr; Mani, S; Orris, D; Shepard, P F; Weerasundara, P D; Choudhary, B C; Joshi, U; Kapoor, V; Shivpuri, R; Baker, W

1989-07-01

A charged particle spectrometer containing a 7120-channel silicon microstrip detector system, one component of Fermilab experiment E706 to study direct photon production in hadron-hadron collisions, was utilized in a run in which 6 million events were recorded. We describe the silicon system, provide early results of track and vertex reconstruction, and present data on the radiation damage to the silicon wafers resulting from the narrow high intensity beam. (orig.).

Collected charge and Lorentz angle measurement on non-irradiated ATLAS silicon micro-strip sensors for the HL-LHC

Energy Technology Data Exchange (ETDEWEB)

Yildirim, Eda

2017-02-15

In this thesis, the collected charge and the Lorentz angle on non-irradiated and the irradiated miniature of the current test silicon micro-strip sensors (ATLAS12) of the future ATLAS inner tracker are measured. The samples are irradiated up to 5 x 10{sup 15} 1 MeV n{sub eq}/cm{sup 2} and some of them also measured after short-term annealing (80 min at 60 C). The measurements are performed at the DESY II test beam, which provides the advantage of tracking to suppress noise hits. The collected charge is measured at various bias voltages for each sample. The results are compared with the measurements performed using a Sr{sup 90} radioactive source. It is shown that the measurements with beam and radioactive source are consistent with each other, and the advantage of tracking at the beam measurements provides the measurement of collected charge on highly irradiated sensors at lower bias voltages. The Lorentz angle is measured for each sample at different magnetic field strengths between 0 T and 1 T, the results are extrapolated to 2 T, which is the magnetic field in the inner tracker of the ATLAS detector. Most of the measurements are performed at -500 V bias voltage, which is the planned operation bias voltage of the future strip tracker. Some samples are also measured at different bias voltages to observe the effect of bias voltage on the Lorentz angle. The signal reconstruction of the strip sensors are performed using the lowest possible signal-to-noise thresholds. For non-irradiated samples, the measured Lorentz angle agrees with the prediction of the BFK model. On the irradiated samples, the results suggest that the Lorentz angle decreases with increasing bias voltage due to the increasing electric field in the sensor. The Lorentz angle decreases with increasing irradiation level; however, if the sample is under-depleted, the effect of electric field dominates and the Lorentz angle increases. Once the irradiation level becomes too high, hence the collected charge

Design optimization of a breast imaging system based on silicon microstrip detectors

International Nuclear Information System (INIS)

Stres, S.; Mikuz, M.

2000-01-01

A mammographic imaging set-up using silicon microstrip detectors in edge-on geometry was simulated using the GEANT package. Deposited energy in tissue of various thicknesses was evaluated and shown to agree to within 10% with reference calculations. Optimal energies as well as spectra for mammography with silicon detectors were determined by maximizing the figure of merit of a realistic imaging set-up. The scattered to primary radiation ratio was studied for various detector geometries. It was found that fan-shaped detectors are needed to maintain the image quality for divergent photon beams. (author)

Radiation hard silicon microstrip detectors for Tevatron experiments

International Nuclear Information System (INIS)

Korjenevski, Sergey

2004-01-01

The Silicon Microstrip Tracking detectors at the CDF and D0 experiments have now been operating for almost three years at Fermilab. These detectors were designed originally for an integrated luminosity of 2fb -1 . As the expected luminosity for Run IIb at the Tevatron collider was initially envisioned to reach 15fb -1 , radiation tolerances of both devices were revisited, culminating in proposals for new systems. With reduced expectations for total luminosity at ∼6fb -1 , the full detector-replacement projects were terminated. The CDF detector is expected nevertheless to cope efficiently with the lower anticipated dose, however, the D0 experiment is planning a smaller-scale project: a Layer-0 (L0) upgrade of the silicon tracker (D0SMT). The new device will fit between the beam line and the inner layer of the current Tracker. Built of single-sided sensors, this upgrade is expected to perform well in the harsh radiation environment, and be able to withstand an integrated luminosity of 15fb -1 . Prototypes of Run IIb sensors were irradiated using 10MeV protons at the tandem Van de Graaff at the James R. McDonald Laboratory at Kansas State University. A fit to the 10MeV proton data yields a damage parameter αp=11x10-17Acm. This is consistent with results from RD48 (αp=9.9x10-17Acm). The scaling of damage to 1MeV neutron fluence uses a hardness factor (κ) derived from the non-ionizing components of the energy loss (NEIL). NEIL predicts a hardness factor of 3.87 for 10MeV protons. We obtained an experimental value of this factor of 2.54, or 34% smaller than scaling predictions from NEIL

Strip defect recognition in electrical tests of silicon microstrip sensors

Energy Technology Data Exchange (ETDEWEB)

Valentan, Manfred, E-mail: valentan@mpp.mpg.de

2017-02-11

This contribution describes the measurement procedure and data analysis of AC-coupled double-sided silicon microstrip sensors with polysilicon resistor biasing. The most thorough test of a strip sensor is an electrical measurement of all strips of the sensor; the measured observables include e.g. the strip's current and the coupling capacitance. These measurements are performed to find defective strips, e.g. broken capacitors (pinholes) or implant shorts between two adjacent strips. When a strip has a defect, its observables will show a deviation from the “typical value”. To recognize and quantify certain defects, it is necessary to determine these typical values, i.e. the values the observables would have without the defect. As a novel approach, local least-median-of-squares linear fits are applied to determine these “would-be” values of the observables. A least-median-of-squares fit is robust against outliers, i.e. it ignores the observable values of defective strips. Knowing the typical values allows to recognize, distinguish and quantify a whole range of strip defects. This contribution explains how the various defects appear in the data and in which order the defects can be recognized. The method has been used to find strip defects on 30 double-sided trapezoidal microstrip sensors for the Belle II Silicon Vertex Detector, which have been measured at the Institute of High Energy Physics, Vienna (Austria).

Development of a fabrication technology for double-sided AC-coupled silicon microstrip detectors

International Nuclear Information System (INIS)

Dalla Betta, G.-F.; Boscardin, M.; Bosisio, L.; Rachevskaia, I.; Zen, M.; Zorzi, N.

2001-01-01

We report on the development of a fabrication technology for double-sided, AC-coupled silicon microstrip detectors for tracking applications. Two batches of detectors with good electrical figures and a low defect rate were successfully manufactured at IRST Laboratory. The processing techniques and the experimental results obtained from these detector prototypes are presented and discussed

Gas microstrip chambers

International Nuclear Information System (INIS)

McIntyre, P.M.; Barasch, E.F.; Bowcock, T.J.V.; Demroff, H.P.; Elliott, S.M.; Howe, M.R.; Lee, B.; Mazumdar, T.K.; Pang, Y.; Smith, D.D.; Wahl, J.; Wu, Y.; Yue, W.K.; Gaedke, R.M.; Vanstraelen, G.

1992-01-01

The gas microstrip chamber has been developed from concept to experimental system during the past three years. A pattern of anode and grid lines are microfabricated onto a dielectric substrate and configured as a high-resolution MWPC. Four recent developments are described: Suitable plastic substrates and lithography techniques for large-area chambers; non-planar silicon-based chambers for 20 μm resolution; integrated on-board synchronous front-end electronics and data buffering; and a porous silicon active cathode for enhanced efficiency and time response. The microstrip chamber appears to be a promising technology for applications in microvertex, tracking spectrometer, muon spectrometer, and transition radiation detection. (orig.)

The ATLAS Silicon Microstrip Tracker

CERN Document Server

Haefner, Petra

2010-01-01

In December 2009 the ATLAS experiment at the CERN Large Hadron Collider (LHC) recorded the first proton-proton collisions at a centre-of-mass energy of 900 GeV. This was followed by collisions at the unprecedented energy of 7 TeV in March 2010. The SemiConductor Tracker (SCT) is a precision tracking device in ATLAS made up from silicon micro-strip detectors processed in the planar p-in-n technology. The signal from the strips is processed in the front-end ASICs working in binary readout mode. Data is transferred to the off-detector readout electronics via optical fibers. The completed SCT has been installed inside the ATLAS experiment. Since then the detector was operated for two years under realistic conditions. Calibration data has been taken and analysed to determine the performance of the system. In addition, extensive commissioning with cosmic ray events has been performed both with and without magnetic field. The sensor behaviour in magnetic field was studied by measurements of the Lorentz angle. After ...

A counting silicon microstrip detector for precision compton polarimetry

CERN Document Server

Doll, D W; Hillert, W; Krüger, H; Stammschroer, K; Wermes, N

2002-01-01

A detector for the detection of laser photons backscattered off an incident high-energy electron beam for precision Compton polarimetry in the 3.5 GeV electron stretcher ring ELSA at Bonn University has been developed using individual photon counting. The photon counting detector is based on a silicon microstrip detector system using dedicated ASIC chips. The produced hits by the pair converted Compton photons are accumulated rather than individually read out. A transverse profile displacement can be measured with mu m accuracy rendering a polarization measurement of the order of 1% on the time scale of 10-15 min possible.

Radiation damage of silicon structures with electrons of 900 MeV

CERN Document Server

Rachevskaia, I; Bosisio, L; Dittongo, S; Quai, E; Rizzo, G

2002-01-01

We present first results on the irradiation of double-sided silicon microstrip detectors and test structures performed at the Elettra synchrotron radiation facility at Trieste, Italy. The devices were irradiated with 900 MeV electrons. The test structures we used for studying bulk, surface and oxide irradiation damage were guard ring diodes, gated diodes and MOS capacitors. The test structures and the double-sided microstrip detectors were produced by Micron Semiconductor Ltd. (England) and IRST (Trento, Italy). For the first time, bulk-type inversion is observed to occur after high-energy electron irradiation. Current and inter-strip resistance measurements performed on the microstrip detectors show that the devices are still usable after type inversion.

Enabling technologies for silicon microstrip tracking detectors at the HL-LHC

International Nuclear Information System (INIS)

Feld, L.; Karpinski, W.; Klein, K.

2016-04-01

While the tracking detectors of the ATLAS and CMS experiments have shown excellent performance in Run 1 of LHC data taking, and are expected to continue to do so during LHC operation at design luminosity, both experiments will have to exchange their tracking systems when the LHC is upgraded to the high-luminosity LHC (HL-LHC) around the year 2024. The new tracking systems need to operate in an environment in which both the hit densities and the radiation damage will be about an order of magnitude higher than today. In addition, the new trackers need to contribute to the first level trigger in order to maintain a high data-taking efficiency for the interesting processes. Novel detector technologies have to be developed to meet these very challenging goals. The German groups active in the upgrades of the ATLAS and CMS tracking systems have formed a collaborative ''Project on Enabling Technologies for Silicon Microstrip Tracking Detectors at the HL-LHC'' (PETTL), which was supported by the Helmholtz Alliance ''Physics at the Terascale'' during the years 2013 and 2014. The aim of the project was to share experience and to work together on key areas of mutual interest during the R and D phase of these upgrades. The project concentrated on five areas, namely exchange of experience, radiation hardness of silicon sensors, low mass system design, automated precision assembly procedures, and irradiations. This report summarizes the main achievements.

Enabling technologies for silicon microstrip tracking detectors at the HL-LHC

Energy Technology Data Exchange (ETDEWEB)

Feld, L.; Karpinski, W.; Klein, K. [RWTH Aachen Univ. (Germany). 1. Physikalisches Institut B; Collaboration: The PETTL Collaboration; and others

2016-04-15

While the tracking detectors of the ATLAS and CMS experiments have shown excellent performance in Run 1 of LHC data taking, and are expected to continue to do so during LHC operation at design luminosity, both experiments will have to exchange their tracking systems when the LHC is upgraded to the high-luminosity LHC (HL-LHC) around the year 2024. The new tracking systems need to operate in an environment in which both the hit densities and the radiation damage will be about an order of magnitude higher than today. In addition, the new trackers need to contribute to the first level trigger in order to maintain a high data-taking efficiency for the interesting processes. Novel detector technologies have to be developed to meet these very challenging goals. The German groups active in the upgrades of the ATLAS and CMS tracking systems have formed a collaborative ''Project on Enabling Technologies for Silicon Microstrip Tracking Detectors at the HL-LHC'' (PETTL), which was supported by the Helmholtz Alliance ''Physics at the Terascale'' during the years 2013 and 2014. The aim of the project was to share experience and to work together on key areas of mutual interest during the R and D phase of these upgrades. The project concentrated on five areas, namely exchange of experience, radiation hardness of silicon sensors, low mass system design, automated precision assembly procedures, and irradiations. This report summarizes the main achievements.

Technology development of p-type microstrip detectors with radiation hard p-spray isolation

International Nuclear Information System (INIS)

Pellegrini, G.; Fleta, C.; Campabadal, F.; Diez, S.; Lozano, M.; Rafi, J.M.; Ullan, M.

2006-01-01

A technology for the fabrication of p-type microstrip silicon radiation detectors using p-spray implant isolation has been developed at CNM-IMB. The p-spray isolation has been optimized in order to withstand a gamma irradiation dose up to 50 Mrad (Si), which represents the ionization radiation dose expected in the middle region of the SCT-Atlas detector of the future Super-LHC during 10 years of operation. The best technological options for the p-spray implant were found by using a simulation software package and dedicated calibration runs. Using the optimized technology, detectors have been fabricated in the Clean Room facility of CNM-IMB, and characterized by reverse current and capacitance measurements before and after irradiation. The average full depletion voltage measured on the non-irradiated detectors was V FD =41±3 V, while the leakage current density for the microstrip devices at V FD +20 V was 400 nA/cm 2

Development of a Test System for the Quality Assurance of Silicon Microstrip Detectors for the Inner Tracking System of the CMS Experiment

CERN Document Server

Axer, Markus

2003-01-01

The inner tracking system of the Compact Muon Solenoid (CMS) experiment at the Large Hadron Collider (LHC) which is being built at the European Laboratory for Particle Physics CERN (Geneva, Switzerland) will be equipped with two different technologies of silicon detectors. While the innermost tracker will be composed of silicon pixel detectors, silicon microstrip detectors are envisaged for the outer tracker architecture. The silicon microstrip tracker will house about 15,000 single detector modules each composed of a set of silicon sensors, the readout electronics (front end hybrid), and a support frame. It will provide a total active area of 198 m2 and ten million analogue channels read out at the collider frequency of 40 MHz. This large number of modules to be produced and integrated into the tracking system is an unprecedented challenge involving industrial companies and various research institutes from many different countries. This thesis deals with the physics of silicon sensors and the preparation of ...

An X-ray imager based on silicon microstrip detector and coded mask

International Nuclear Information System (INIS)

Del Monte, E.; Costa, E.; Di Persio, G.; Donnarumma, I.; Evangelista, Y.; Feroci, M.; Frutti, M.; Lapshov, I.; Lazzarotto, F.; Mastropietro, M.; Morelli, E.; Pacciani, L.; Porrovecchio, G.; Rapisarda, M.; Rubini, A.; Soffitta, P.; Tavani, M.; Argan, A.

2007-01-01

SuperAGILE is the X-ray monitor of AGILE, a satellite mission for gamma-ray astronomy, and it is the first X-ray imaging instrument based on the technology of the silicon microstrip detectors combined with a coded aperture imaging technique. The SuperAGILE detection plane is composed of four 1-D silicon microstrip detector modules, mechanically coupled to tungsten coded mask units. The detector strips are separately and individually connected to the input analogue channels of the front-end electronics, composed of low-noise and low-power consumption VLSI ASIC chips. SuperAGILE can produce 1-D images with 6 arcmin angular resolution and ∼2-3 arcmin localisation capability, for intense sources, in a field of view composed of two orthogonal areas of 107 deg. x 68 deg. The time resolution is 2 μs, the overall dead time is ∼5 μs and the electronic noise is ∼7.5 keV full-width at half-maximum. The resulting instrument is very compact (40x40x14 cm 3 ), light (10 kg) and has low power consumption (12 W). AGILE is a mission of the Agenzia Spaziale Italiana and its launch is planned in 2007 in a low equatorial Earth orbit. In this contribution we present SuperAGILE and discuss its performance and scientific objectives

Non-invasive characterization and quality assurance of silicon micro-strip detectors using pulsed infrared laser

Science.gov (United States)

Ghosh, P.

2016-01-01

The Compressed Baryonic Matter (CBM) experiment at FAIR is composed of 8 tracking stations consisting of roughly 1300 double sided silicon micro-strip detectors of 3 different dimensions. For the quality assurance of prototype micro-strip detectors a non-invasive detector charaterization is developed. The test system is using a pulsed infrared laser for charge injection and characterization, called Laser Test System (LTS). The system is aimed to develop a set of characterization procedures which are non-invasive (non-destructive) in nature and could be used for quality assurances of several silicon micro-strip detectors in an efficient, reliable and reproducible way. The procedures developed (as reported here) uses the LTS to scan sensors with a pulsed infra-red laser driven by step motor to determine the charge sharing in-between strips and to measure qualitative uniformity of the sensor response over the whole active area. The prototype detector modules which are tested with the LTS so far have 1024 strips with a pitch of 58 μm on each side. They are read-out using a self-triggering prototype read-out electronic ASIC called n-XYTER. The LTS is designed to measure sensor response in an automatized procedure at several thousand positions across the sensor with focused infra-red laser light (spot size ≈ 12 μm, wavelength = 1060 nm). The pulse with a duration of ≈ 10 ns and power ≈ 5 mW of the laser pulse is selected such, that the absorption of the laser light in the 300 μm thick silicon sensor produces ≈ 24000 electrons, which is similar to the charge created by minimum ionizing particles (MIP) in these sensors. The laser scans different prototype sensors and various non-invasive techniques to determine characteristics of the detector modules for the quality assurance is reported.

A radiographic imaging system based upon a 2-D silicon microstrip sensor

CERN Document Server

Papanestis, A; Corrin, E; Raymond, M; Hall, G; Triantis, F A; Manthos, N; Evagelou, I; Van den Stelt, P; Tarrant, T; Speller, R D; Royle, G F

2000-01-01

A high resolution, direct-digital detector system based upon a 2-D silicon microstrip sensor has been designed, built and is undergoing evaluation for applications in dentistry and mammography. The sensor parameters and image requirements were selected using Monte Carlo simulations. Sensors selected for evaluation have a strip pitch of 50mum on the p-side and 80mum on the n-side. Front-end electronics and data acquisition are based on the APV6 chip and were adapted from systems used at CERN for high-energy physics experiments. The APV6 chip is not self-triggering so data acquisition is done at a fixed trigger rate. This paper describes the mammographic evaluation of the double sided microstrip sensor. Raw data correction procedures were implemented to remove the effects of dead strips and non-uniform response. Standard test objects (TORMAX) were used to determine limiting spatial resolution and detectability. MTFs were determined using the edge response. The results indicate that the spatial resolution of the...

Micro-discharge noise and radiation damage of silicon microstrip sensors

International Nuclear Information System (INIS)

Ohsugi, T.; Iwata, Y.; Ohyama, H.; Ohmoto, T.; Yoshikawa, M.; Handa, T.; Kurino, K.; Fujita, K.; Kitabayashi, H.; Tamura, N.; Hatakenaka, T.; Maeohmichi, M.; Takahata, M.; Nakao, M.; Iwasaki, H.; Kohriki, T.; Terada, S.; Unno, Y.; Takashima, R.; Yamamoto, K.; Yamamura, K.

1996-01-01

We have examined experimentally some existing ideas for improving the radiation hardness of silicon microstrip sensors. We confirm that the extended electrode and the deep implant-strip proposed on the basis of simulation studies works effectively to suppress micro-discharge as well as junction breakdown of the bias or guard ring. For an integrated coupling capacitor a double layer structure of SiO 2 and Si 3 N 4 provides better radiation hardness than that of single SiO 2 coupling in our design conditions. The onset voltage of the micro-discharge on the bias/guard ring has been studied for an extended electrode and a floating guard ring. (orig.)

Design, fabrication and characterization of the first AC-coupled silicon microstrip sensors in India

International Nuclear Information System (INIS)

Aziz, T; Chendvankar, S R; Mohanty, G B; Patil, M R; Rao, K K; Rani, Y R; Rao, Y P P; Behnamian, H; Mersi, S; Naseri, M

2014-01-01

This paper reports the design, fabrication and characterization of single-sided silicon microstrip sensors with integrated biasing resistors and coupling capacitors, produced for the first time in India. We have first developed a prototype sensor on a four-inch wafer. After finding suitable test procedures for characterizing these AC coupled sensors, we fine-tuned various process parameters in order to produce sensors of the desired specifications

Signals from fluorescent materials on the surface of silicon micro-strip sensors

CERN Document Server

Sperlich, Dennis; The ATLAS collaboration

2017-01-01

For the High-Luminosity Upgrade of the Large Hadron Collider at CERN, the ATLAS Inner Detector will be replaced with a new, all-silicon tracker. In order to minimise the amount of material in the detector, circuit boards with readout electronics will be glued on to the active area of the sensor. Several adhesives investigated to be used for the construction of detector modules were found to become fluorescent when exposed to UV light. These adhesives could become a light source in the high-radiation environment of the ATLAS detector. The effect of fluorescent material covering the sensor surface in a high- radiation environment has been studied for a silicon micro-strip sensor using a micro-focused X-ray beam. By pointing the beam both inside the sensor and parallel to the sensor surface, the sensor responses from direct hits and fluorescence can be compared with high precision. This contribution presents a setup to study the susceptibility of silicon strip sensors to light contamination from fluorescent mate...

Electrical production testing of the D0 Silicon microstrip tracker detector modules

Energy Technology Data Exchange (ETDEWEB)

D0, SMT Production Testing Group; /Fermilab

2006-03-01

The D0 Silicon Microstrip Tracker (SMT) is the innermost system of the D0 detector in Run 2. It consists of 912 detector units, corresponding to 5 different types of assemblies, which add up to a system with 792,576 readout channels. The task entrusted to the Production Testing group was to thoroughly debug, test and grade each detector module before its installation in the tracker. This note describes the production testing sequence and the procedures by which the detector modules were electrically tested and characterized at the various stages of their assembly.

Development and Evaluation of Test Stations for the Quality Assurance of the Silicon Micro-Strip Detector Modules for the CMS Experiment

CERN Document Server

Pöttgens, Michael

2007-01-01

CMS (Compact Muon Solenoid) is one of four large-scale detectors which will be operated at the LHC (Large Hadron Collider) at the European Laboratory for Particle Physics (CERN). For the search for new physics the reconstruction of the collision products and their properties is essential. In the innermost part of the CMS detector the traces of ionizing particles are measured utilizing a silicon tracker. A large fraction of this detector is equipped with silicon micro-strip modules which provide a precise space resolution in 1-dimension. A module consists of a sensor for detection of particles, the corresponding read-out electronics (hybrid) and a mechanical support structure. Since the 15,148 modules, which will be installed in the silicon micro-strip detector, have a total sensitive surface area of about 198 m2, the inner tracker of CMS is the largest silicon tracking detector, which has ever been built. While the sensors and hybrids are produced in industry, the construction of the modules and the control o...

Optically controlled photonic bandgap structures for microstrip circuits

International Nuclear Information System (INIS)

Cadman, Darren Arthur

2003-01-01

This thesis is concerned with the optical control of microwave photonic bandgap circuits using high resistivity silicon. Photoconducting processes that occur within silicon are investigated. The influence of excess carrier density on carrier mobility and lifetime is examined. In addition, electron-hole pair recombination mechanisms (Shockley-Read-Hall, Auger, radiative and surface) are investigated. The microwave properties of silicon are examined, in particular the variation of silicon reflectivity with excess carrier density. Filtering properties of microstrip photonic bandgap structures and how they may be controlled optically are studied. A proof-of-concept microstrip photonic bandgap structure with optical control is designed, simulated and measured. With no optical illumination incident upon the silicon, the microstrip photonic bandgap structure's filtering properties are well-defined; a 3dB stopband width of 2.6GHz, a 6dB bandwidth of 2GHz and stopband depth of -11.6dB at the centre frequency of 9.9GHz. When the silicon is illuminated, the structure's filtering properties are suppressed. Under illumination the experimental results display an increase in S 21 of 6.5dB and a reduction in S 11 of more than 10dB at 9.9GHz. A comparison of measured and simulated results reveal that the photogenerated excess carrier density is between 4 x 10 15 cm -3 and 1.1 x 10 16 cm -3 . (author)

Mechanical studies towards a silicon micro-strip super module for the ATLAS inner detector upgrade at the high luminosity LHC

International Nuclear Information System (INIS)

Barbier, G; Cadoux, F; Clark, A; Favre, Y; Ferrere, D; Gonzalez-Sevilla, S; Iacobucci, G; Marra, D La; Perrin, E; Seez, W; Endo, M; Hanagaki, K; Hara, K; Ikegami, Y; Nakamura, K; Takubo, Y; Terada, S; Jinnouchi, O; Nishimura, R; Takashima, R

2014-01-01

It is expected that after several years of data-taking, the Large Hadron Collider (LHC) physics programme will be extended to the so-called High-Luminosity LHC, where the instantaneous luminosity will be increased up to 5 × 10 34  cm −2  s −1 . For the general-purpose ATLAS experiment at the LHC, a complete replacement of its internal tracking detector will be necessary, as the existing detector will not provide the required performance due to the cumulated radiation damage and the increase in the detector occupancy. The baseline layout for the new ATLAS tracker is an all-silicon-based detector, with pixel sensors in the inner layers and silicon micro-strip detectors at intermediate and outer radii. The super-module (SM) is an integration concept proposed for the barrel strip region of the future ATLAS tracker, where double-sided stereo silicon micro-strip modules (DSM) are assembled into a low-mass local support (LS) structure. Mechanical aspects of the proposed LS structure are described

Micro-strip sensors based on CVD diamond

Energy Technology Data Exchange (ETDEWEB)

Adam, W.; Berdermann, E.; Bergonzo, P.; Bertuccio, G.; Bogani, F.; Borchi, E.; Brambilla, A.; Bruzzi, M.; Colledani, C.; Conway, J.; D' Angelo, P.; Dabrowski, W.; Delpierre, P.; Deneuville, A.; Dulinski, W.; Eijk, B. van; Fallou, A.; Fizzotti, F.; Foulon, F.; Friedl, M.; Gan, K.K.; Gheeraert, E.; Hallewell, G.; Han, S.; Hartjes, F.; Hrubec, J.; Husson, D.; Kagan, H.; Kania, D.; Kaplon, J.; Kass, R.; Koeth, T.; Krammer, M.; Logiudice, A.; Lu, R.; Mac Lynne, L.; Manfredotti, C.; Meier, D. E-mail: dirk.meier@cern.ch; Mishina, M.; Moroni, L.; Oh, A.; Pan, L.S.; Pernicka, M.; Peitz, A.; Perera, L.; Pirollo, S.; Procario, M.; Riester, J.L.; Roe, S.; Rousseau, L.; Rudge, A.; Russ, J.; Sala, S.; Sampietro, M.; Schnetzer, S.; Sciortino, S.; Stelzer, H.; Stone, R.; Suter, B.; Tapper, R.J.; Tesarek, R.; Trischuk, W.; Tromson, D.; Vittone, E.; Walsh, A.M.; Wedenig, R.; Weilhammer, P.; Wetstein, M.; White, C.; Zeuner, W.; Zoeller, M

2000-10-11

In this article we present the performance of recent chemical vapour deposition (CVD) diamond micro-strip sensors in beam tests. In addition, we present the first comparison of a CVD diamond micro-strip sensor before and after proton irradiation.

Micro-strip sensors based on CVD Diamond

CERN Document Server

Adam, W; Bergonzo, P; Bertuccio, G; Bogani, F; Borchi, E; Brambilla, A; Bruzzi, Mara; Colledani, C; Conway, J; D'Angelo, P; Dabrowski, W; Delpierre, P A; Deneuville, A; Dulinski, W; van Eijk, B; Fallou, A; Fizzotti, F; Foulon, F; Friedl, M; Gan, K K; Gheeraert, E; Hallewell, G D; Han, S; Hartjes, F G; Hrubec, Josef; Husson, D; Kagan, H; Kania, D R; Kaplon, J; Kass, R; Koeth, T W; Krammer, Manfred; Lo Giudice, A; Lü, R; MacLynne, L; Manfredotti, C; Meier, D; Mishina, M; Moroni, L; Oh, A; Pan, L S; Pernicka, Manfred; Peitz, A; Perera, L P; Pirollo, S; Procario, M; Riester, J L; Roe, S; Rousseau, L; Rudge, A; Russ, J; Sala, S; Sampietro, M; Schnetzer, S R; Sciortino, S; Stelzer, H; Stone, R; Suter, B; Tapper, R J; Tesarek, R J; Trischuk, W; Tromson, D; Vittone, E; Walsh, A M; Wedenig, R; Weilhammer, Peter; Wetstein, M; White, C; Zeuner, W; Zoeller, M M

2000-01-01

In this article we present the performance of recent chemical vapour deposition (CVD) diamond micro-strip sensors in beam tests. In addition we present the first comparison of a CVD diamond micro-strip sensor before and after proton irradiation.

Micro-strip sensors based on CVD diamond

International Nuclear Information System (INIS)

Adam, W.; Berdermann, E.; Bergonzo, P.; Bertuccio, G.; Bogani, F.; Borchi, E.; Brambilla, A.; Bruzzi, M.; Colledani, C.; Conway, J.; D'Angelo, P.; Dabrowski, W.; Delpierre, P.; Deneuville, A.; Dulinski, W.; Eijk, B. van; Fallou, A.; Fizzotti, F.; Foulon, F.; Friedl, M.; Gan, K.K.; Gheeraert, E.; Hallewell, G.; Han, S.; Hartjes, F.; Hrubec, J.; Husson, D.; Kagan, H.; Kania, D.; Kaplon, J.; Kass, R.; Koeth, T.; Krammer, M.; Logiudice, A.; Lu, R.; Mac Lynne, L.; Manfredotti, C.; Meier, D.; Mishina, M.; Moroni, L.; Oh, A.; Pan, L.S.; Pernicka, M.; Peitz, A.; Perera, L.; Pirollo, S.; Procario, M.; Riester, J.L.; Roe, S.; Rousseau, L.; Rudge, A.; Russ, J.; Sala, S.; Sampietro, M.; Schnetzer, S.; Sciortino, S.; Stelzer, H.; Stone, R.; Suter, B.; Tapper, R.J.; Tesarek, R.; Trischuk, W.; Tromson, D.; Vittone, E.; Walsh, A.M.; Wedenig, R.; Weilhammer, P.; Wetstein, M.; White, C.; Zeuner, W.; Zoeller, M.

2000-01-01

In this article we present the performance of recent chemical vapour deposition (CVD) diamond micro-strip sensors in beam tests. In addition, we present the first comparison of a CVD diamond micro-strip sensor before and after proton irradiation

Micro-strip sensors based on CVD diamond

Science.gov (United States)

Adam, W.; Berdermann, E.; Bergonzo, P.; Bertuccio, G.; Bogani, F.; Borchi, E.; Brambilla, A.; Bruzzi, M.; Colledani, C.; Conway, J.; D'Angelo, P.; Dabrowski, W.; Delpierre, P.; Deneuville, A.; Dulinski, W.; van Eijk, B.; Fallou, A.; Fizzotti, F.; Foulon, F.; Friedl, M.; Gan, K. K.; Gheeraert, E.; Hallewell, G.; Han, S.; Hartjes, F.; Hrubec, J.; Husson, D.; Kagan, H.; Kania, D.; Kaplon, J.; Kass, R.; Koeth, T.; Krammer, M.; Logiudice, A.; Lu, R.; mac Lynne, L.; Manfredotti, C.; Meier, D.; Mishina, M.; Moroni, L.; Oh, A.; Pan, L. S.; Pernicka, M.; Peitz, A.; Perera, L.; Pirollo, S.; Procario, M.; Riester, J. L.; Roe, S.; Rousseau, L.; Rudge, A.; Russ, J.; Sala, S.; Sampietro, M.; Schnetzer, S.; Sciortino, S.; Stelzer, H.; Stone, R.; Suter, B.; Tapper, R. J.; Tesarek, R.; Trischuk, W.; Tromson, D.; Vittone, E.; Walsh, A. M.; Wedenig, R.; Weilhammer, P.; Wetstein, M.; White, C.; Zeuner, W.; Zoeller, M.; RD42 Collaboration

2000-10-01

In this article we present the performance of recent chemical vapour deposition (CVD) diamond micro-strip sensors in beam tests. In addition, we present the first comparison of a CVD diamond micro-strip sensor before and after proton irradiation.

Microstrip silicon detectors of the monitoring and triggering systems in the E-161 experiment

International Nuclear Information System (INIS)

Bogolyubskij, M.Yu.; Kurchaninov, L.L.; Moiseev, A.M.; Semenov, P.A.; Leflat, A.K.; Sekhniaidze, G.G.

1991-01-01

A monitoring and triggering system based on microstrip silicon detectors (MSD) and fast-response low-noise electronics with the number of the readout channels equal to 896, is described. The PMS noise is ENC=25x10 3 e - with the signal integration time of 50 ns. The probability of registering a noise pulse by one channel during data readout cycle is not more than 2.5x10 -6 . The time resolution (FWHM) is (16±3) ns. 17 refs.; 7 figs

Design, fabrication and characterization of the first AC-coupled silicon microstrip sensors in India

CERN Document Server

Aziz, T; Mohanty, G.B.; Patil, M.R.; Rao, K.K.; Rani, Y.R.; Rao, Y.P.P.; Behnamian, H.; Mersi, S.; Naseri, M.

2014-01-01

This paper reports the design, fabrication and characterization of single-sided silicon microstrip sensors with integrated biasing resistors and coupling capacitors, produced for the first time in India. We have first developed a prototype sensor with different width and pitch combinations on a single 4-inch wafer. After finding test procedures for characterizing these AC coupled sensors, we have chosen an optimal width-pitch combination and also fine-tuned various process parameters in order to produce sensors with the desired specifications.

Quality assurance of double-sided silicon microstrip sensors for the silicon tracking system in the CBM experiment at FAIR

Energy Technology Data Exchange (ETDEWEB)

Larionov, Pavel [Goethe Universitaet, Frankfurt (Germany); Collaboration: CBM-Collaboration

2015-07-01

The Silicon Tracking System (STS) is the core tracking detector of the CBM experiment at FAIR. The system's task is to reconstruct the trajectories of the charged particles produced in the beam-target interactions, provide their momentum determination, and enable the detection of decay topologies. The STS will comprise 1220 double-sided silicon microstrip sensors. After production each sensor will go through a number of Quality Assurance procedures to verify their validity for performance in the STS and also to confirm the manufacturer's data. In this talk, results of the quality assurance procedures that are being applied to the latest STS prototype sensors, including detailed tests of the quality of each single strip, long-term stability and preparations for volume tests during series production, are presented.

CBC3: a CMS microstrip readout ASIC with logic for track-trigger modules at HL-LHC

CERN Document Server

Prydderch, Mark Lyndon; Bell, Stephen Jean-marc; Key-Charriere, M; Jones, Lawrence; Auzinger, Georg; Borg, Johan; Hall, Geoffrey; Pesaresi, Mark Franco; Raymond, David Mark; Uchida, Kirika; Goldstein, Joel; Seif El Nasr, Sarah

2018-01-01

The CBC3 is the latest version of the CMS Binary Chip ASIC for readout of the outer radial region of the upgraded CMS Tracker at HL-LHC. This 254-channel, 130nm CMOS ASIC is designed to be bump-bonded to a substrate to which sensors will be wire-bonded. It will instrument double-layer 2S-modules, consisting of two overlaid silicon microstrip sensors with aligned microstrips. On-chip logic identifies first level trigger primitives from high transverse-momentum tracks by selecting correlated hits in the two sensors. Delivered in late 2016, the CBC3 has been under test for several months, including X-ray irradiations and SEU testing. Results and performance are reported.

The charge collection in single side silicon microstrip detectors

CERN Document Server

Eremin, V V; Roe, S; Ruggiero, G; Weilhammer, Peter

2003-01-01

The transient current technique has been used to investigate signal formation in unirradiated silicon microstrip detectors, which are similar in geometry to those developed for the ATLAS experiment at LHC. Nanosecond pulsed infrared and red lasers were used to induce the signals under study. Two peculiarities in the detector performance were observed: an unexpectedly slow rise to the signal induced in a given strip when signals are injected opposite to the strip, and a long duration of the induced signal in comparison with the calculated drift time of charge carriers through the detector thickness - with a significant fraction of the charge being induced after charge carrier arrival. These major effects and details of the detector response for different positions of charge injection are discussed in the context of Ramo's theorem and compared with predictions arising from the more commonly studied phenomenon of signal formation in planar pad detectors.

Construction of the new silicon microstrips tracker for the Phase-II ATLAS detector

CERN Document Server

Liang, Zhijun; The ATLAS collaboration

2018-01-01

The inner detector of the present ATLAS detector has been designed and developed to function in the environment of the present Large Hadron Collider (LHC). At the next-generation tracking detector proposed for the High Luminosity LHC (HL-LHC), the so-called ATLAS Phase-II Upgrade, the particle densities and radiation levels will be higher by as much as a factor of ten. The new detectors must be faster, they need to be more highly segmented, and covering more area. They also need to be more resistant to radiation, and they require much greater power delivery to the front-end systems. For those reasons, the inner tracker of the ATLAS detector must be redesigned and rebuilt completely. The design of the ATLAS Upgrade inner tracker (ITk) has already been defined. It consists of several layers of silicon particle detectors. The innermost layers will be composed of silicon pixel sensors, and the outer layers will consist of silicon microstrip sensors. This paper will focus on the latest research and development act...

Charge-partitioning study of a wide-pitch silicon micro-strip detector with a 64-channel CMOS preamplifier array

International Nuclear Information System (INIS)

Ikeda, H.; Tsuboyama, T.; Okuno, S.; Saitoh, Y.; Akamine, T.; Satoh, K.; Inoue, M.; Yamanaka, J.; Mandai, M.; Takeuchi, H.; Kitta, T.; Miyahara, S.; Kamiya, M.

1996-01-01

The wider pitch readout operation of a 50 μm-pitch double-sided silicon micro-strip detector has been studied specifically concerning its ohmic side. Every second readout and ganged configuration was examined by employing a newly developed 64-channel preamplifier array. The observed charge responses for collimated IR light were compared with a numerical model. (orig.)

A silicon microstrip detector in a magnetic spectrometer for high-resolution electron scattering experiments at the S-DALINAC

International Nuclear Information System (INIS)

Lenhardt, A.W.; Bonnes, U.; Burda, O.; Neumann-Cosel, P. von; Platz, M.; Richter, A.; Watzlawik, S.

2006-01-01

A silicon microstrip detector was developed as focal plane detector of the 169.7 deg. magic angle double-focussing spectrometer at the superconducting Darmstadt electron linear accelerator (S-DALINAC). It allows experiments with minimum ionizing electrons at data rates up to 100 kHz, utilizing the maximum resolution of the spectrometer achievable in dispersion-matching mode

Radiation damage studies for the DOe silicon detector

International Nuclear Information System (INIS)

Lehner, Frank

2004-01-01

We report on irradiation studies performed on spare production silicon detector modules for the current DOe silicon detector. The lifetime expectations due to radiation damage effects of the existing silicon detector are reviewed. A new upgrade project was started with the goal of a complete replacement of the existing silicon detector. In that context, several investigations on the radiation hardness of new prototype silicon microstrip detectors were carried out. The irradiation on different detector types was performed with 10 MeV protons up to fluences of 10 14 p/cm 2 at the J.R. Mcdonald Laboratory at Kansas State University. The flux calibration was carefully checked using different normalisation techniques. As a result, we observe roughly 40-50% less radiation damage in silicon for 10 MeV p exposure than it is expected by the predicted NIEL scaling

FTIR studies of swift silicon and oxygen ion irradiated porous silicon

International Nuclear Information System (INIS)

Bhave, Tejashree M.; Hullavarad, S.S.; Bhoraskar, S.V.; Hegde, S.G.; Kanjilal, D.

1999-01-01

Fourier Transform Infrared Spectroscopy has been used to study the bond restructuring in silicon and oxygen irradiated porous silicon. Boron doped p-type (1 1 1) porous silicon was irradiated with 10 MeV silicon and a 14 MeV oxygen ions at different doses ranging between 10 12 and 10 14 ions cm -2 . The yield of PL in porous silicon irradiated samples was observed to increase considerably while in oxygen irradiated samples it was seen to improve only by a small extent for lower doses whereas it decreased for higher doses. The results were interpreted in view of the relative intensities of the absorption peaks associated with O-Si-H and Si-H stretch bonds

Radiation damage studies for the D0 silicon detector

International Nuclear Information System (INIS)

Lehner, F.

2004-01-01

We report on irradiation studies performed on spare production silicon detector modules for the current D0 silicon detector. The lifetime expectations due to radiation damage effects of the existing silicon detector are reviewed. A new upgrade project was started with the goal of a complete replacement of the existing silicon detector. In that context, several investigations on the radiation hardness of new prototype silicon microstrip detectors were carried out. The irradiation on different detector types was performed with 10 MeV protons up to fluences of 10 14 p/cm 2 at the J.R. Mcdonald Laboratory at Kansas State University. The flux calibration was carefully checked using different normalization techniques. As a result, we observe roughly 40-50% less radiation damage in silicon for 10 MeV p exposure than it is expected by the predicted NIEL scaling

Signals from fluorescent materials on the surface of silicon micro-strip sensors

CERN Document Server

Sperlich, Dennis; The ATLAS collaboration

2018-01-01

For the High-Luminosity Upgrade of the Large Hadron Collider at CERN, the ATLAS Inner Detector will be replaced with a new, all-silicon tracker (ITk). In order to minimise the amount of material in the ITk, circuit boards with readout electronics will be glued onto the active area of the sensor. Several adhesives, investigated to be used for the construction of detector modules, were found to become fluorescent when exposed to UV light. These adhesives could become a light source in the high-radiation environment of the ATLAS detector. The effect of fluorescent material covering the sensor surface in a high-radiation environment has been studied for a silicon micro-strip sensor using a micro-focused X-ray beam. By positioning the beam parallel to the sensor surfave and pointing it both inside the sensor and above the sensor surface inside the deposited glue, the sensor responses from direct hits and fluorescence can be compared with high precision. This contribution presents a setup to study the susceptibilit...

Study of silicon microstrips detector quantum efficiency using mathematical simulation

International Nuclear Information System (INIS)

Leyva Pernia, Diana; Cabal Rodriguez, Ana Ester; Pinnera Hernandez, Ibrahin; Fabelo, Antonio Leyva; Abreu Alfonso, Yamiel; Cruz Inclan, Carlos M.

2011-01-01

The paper shows the results from the application of mathematical simulation to study the quantum efficiency of a microstrips crystalline silicon detector, intended for medical imaging and the development of other applications such as authentication and dating of cultural heritage. The effects on the quantum efficiency of some parameters of the system, such as the detector-source geometry, X rays energy and detector dead zone thickness, were evaluated. The simulation results were compared with the theoretical prediction and experimental available data, resulting in a proper correspondence. It was concluded that the use of frontal configuration for incident energies lower than 17 keV is more efficient, however the use of the edge-on configuration for applications requiring the detection of energy above this value is recommended. It was also found that the reduction of the detector dead zone led to a considerable increase in quantum efficiency for any energy value in the interval from 5 to 100 keV.(author)

A study of positron irradiated porous silicon

International Nuclear Information System (INIS)

Huang Yuanming; Xue Qing; Zhai Baogai; Xu Aijun; Liu Shewen; Yu Weizhong

1998-01-01

The effect of positron irradiation on photoluminescence (PL) of porous silicon has been studied. After four hour positron irradiation, the red PL spectrum of porous silicon blue shifts into greenish spectral region, and a higher energy luminescence band is introduced into this blueshifted spectrum. The fourier transform infrared absorption experiment shows that the positron irradiation can cause further oxidization of porous silicon. A possible mechanism causing this change of PL spectra after positron irradiation is suggested

Development of radiation hard microstrip detectors for the CBM silicon tracking system

Energy Technology Data Exchange (ETDEWEB)

Chatterji, Sudeep [GSI, Darmstadt (Germany)

2010-07-01

Radiation damage in Silicon microstrip detectors is of the one main concerns for the development of the Silicon Tracking System (STS) in the planned Compressed Baryonic Matter (CBM) experiment at FAIR. The STS will consist of Double Sided Silicon Strip Detectors (DSSD) having pitch around 60 {mu}m, width 20 {mu}m, stereo angle of {+-}7.5{sup 0} on n and p sides with double metallization on either side making it challenging to fabricate.We are using 3-dimensional TCAD simulation tools from SYNOPSYS to carry out process (using Sentaurus Process) and device (using Sentaurus Device) simulations.We have simulated the impact of radiation damage in DSSDs by changing the effective carrier concentration (N{sub eff}) with fluence using the Hamburg model. The change in minority carrier life time has been taken into account using the Kraners model and the Perugia trap model has been used to simulate the traps. We have also extracted macroscopic parameters like Coupling Capacitance, Interstrip Capacitance (both DC and AC), Interstrip Resistance of DSSDs using Mixed Mode simulation (using SPICE with Sentaurus Device) and studied the variation of these parameters with fluence. The simulation results have been compared to the experimental results. We also simulated transients by passing a Heavy Ion through a DSSD and studied the charge collection performance.

Signal development in irradiated silicon detectors

CERN Document Server

Kramberger, Gregor; Mikuz, Marko

2001-01-01

This work provides a detailed study of signal formation in silicon detectors, with the emphasis on detectors with high concentration of irradiation induced defects in the lattice. These defects give rise to deep energy levels in the band gap. As a consequence, the current induced by charge motion in silicon detectors is signifcantly altered. Within the framework of the study a new experimental method, Charge correction method, based on transient current technique (TCT) was proposed for determination of effective electron and hole trapping times in irradiated silicon detectors. Effective carrier trapping times were determined in numerous silicon pad detectors irradiated with neutrons, pions and protons. Studied detectors were fabricated on oxygenated and non-oxygenated silicon wafers with different bulk resistivities. Measured effective carrier trapping times were found to be inversely proportional to fuence and increase with temperature. No dependence on silicon resistivity and oxygen concentration was observ...

Effect of neutron irradiation on p-type silicon

International Nuclear Information System (INIS)

Sopko, B.

1973-01-01

The possibilities are discussed of silicon isotope reactions with neutrons of all energies. In the reactions, 30 Si is converted to a stable phosphorus isotope forming n-type impurities in silicon. The above reactions proceed as a result of thermal neutron irradiation. An experiment is reported involving irradiation of two p-type silicon single crystals having a specific resistance of 2000 ohm.cm and 5000 to 20 000 ohm.cm, respectively, which changed as a result of irradiation into n-type silicon with a given specific resistance. The specific resistance may be pre-calculated from the concentration of impurities and the time of irradiation. The effects of irradiation on other silicon parameters and thus on the suitability of silicon for the manufacture of semiconductor elements are discussed. (J.K.)

Silicon microstrip detector development in the Institute for High Energy Physics Zeuthen, GDR

International Nuclear Information System (INIS)

Lange, W.; Nowak, W.D.; Truetzschler, K.

1990-01-01

This paper reports that in regard of the growing interest to study short living particles demanding for high resolution vertex detectors the authors started to build Si microstrip detectors. The first detector generation was characterized by a small area of silicon and a readout via printed circuit board fan out. Now they can assemble detectors with larger areas and VLSI readout. A special cleanroom has been built. Equipment and tools necessary are available. Silicon wafers and thick film hybrid circuits are fabricated under collaboration by the GDR industry. Applications of their detectors were several test-runs at CERN to calibrate the L3 time expansion chamber (TEC) and the L3 muon chambers. A 10-layer telescope is designed now and it is planned to calibrate a high resolution scintillation fiber target. Future applications will be high resolution vertex detectors, e.g. L3 upgrading (LEP, CERN) or KEDR (VEPP-5, Novosibirsk). Further investigations will concern AC coupled strip detectors (single and double sided) and pixel and/or pad detectors

Development and evaluation of test stations for the quality assurance of the silicon micro-strip detector modules for the CMS experiment

International Nuclear Information System (INIS)

Poettgens, M.

2007-01-01

CMS (Compact Muon Solenoid) is one of four large-scale detectors which will be operated at the LHC (Large Hadron Collider) at the European Laboratory for Particle Physics (CERN). For the search for new physics the reconstruction of the collision products and their properties is essential. In the innermost part of the CMS detector the traces of ionizing particles are measured utilizing a silicon tracker. A large fraction of this detector is equipped with silicon micro-strip modules which provide a precise space resolution in 1-dimension. A module consists of a sensor for detection of particles, the corresponding read-out electronics (hybrid) and a mechanical support structure. Since the 15,148 modules, which will be installed in the silicon micro-strip detector, have a total sensitive surface area of about 198 m 2 , the inner tracker of CMS is the largest silicon tracking detector, which has ever been built. While the sensors and hybrids are produced in industry, the construction of the modules and the control of the quality is done by the members of the 21 participating institutes. Since the access to the silicon micro-strip tracker will be very limited after the installation in the CMS detector the installed modules must be of high quality. For this reason the modules are thoroughly tested and the test results are uploaded to a central database. By the development of a read-out system and the corresponding software the III. Physikalisches Institut made an important contribution for the electrical and functional quality control of hybrids and modules. The read-out system provides all features for the operation and test of hybrids and modules and stands out due to high reliability and simple handling. Because a very user-friedly and highly automated software it became the official test tool and was integrated in various test stands. The test stands, in which the read-out system is integrated in, are described and the tests which are implemented in the corresponding

Development and evaluation of test stations for the quality assurance of the silicon micro-strip detector modules for the CMS experiment

Energy Technology Data Exchange (ETDEWEB)

Poettgens, M.

2007-11-22

CMS (Compact Muon Solenoid) is one of four large-scale detectors which will be operated at the LHC (Large Hadron Collider) at the European Laboratory for Particle Physics (CERN). For the search for new physics the reconstruction of the collision products and their properties is essential. In the innermost part of the CMS detector the traces of ionizing particles are measured utilizing a silicon tracker. A large fraction of this detector is equipped with silicon micro-strip modules which provide a precise space resolution in 1-dimension. A module consists of a sensor for detection of particles, the corresponding read-out electronics (hybrid) and a mechanical support structure. Since the 15,148 modules, which will be installed in the silicon micro-strip detector, have a total sensitive surface area of about 198 m{sup 2}, the inner tracker of CMS is the largest silicon tracking detector, which has ever been built. While the sensors and hybrids are produced in industry, the construction of the modules and the control of the quality is done by the members of the 21 participating institutes. Since the access to the silicon micro-strip tracker will be very limited after the installation in the CMS detector the installed modules must be of high quality. For this reason the modules are thoroughly tested and the test results are uploaded to a central database. By the development of a read-out system and the corresponding software the III. Physikalisches Institut made an important contribution for the electrical and functional quality control of hybrids and modules. The read-out system provides all features for the operation and test of hybrids and modules and stands out due to high reliability and simple handling. Because a very user-friedly and highly automated software it became the official test tool and was integrated in various test stands. The test stands, in which the read-out system is integrated in, are described and the tests which are implemented in the

Effect of SiO$_{2}$ passivating layer in segmented silicon planar detectors on the detector response

CERN Document Server

Verbitskaya, Elena; Eremin, Vladimir; Golubkov, S; Konkov, K; Roe, Shaun; Ruggiero, G; Sidorov, A; Weilhammer, Peter

2004-01-01

Silicon detectors with a fine segmentation (micropixel and microstrip) are the main type of detectors used in the inner trackers of LHC experiments. Due to the high luminosity of the LHC machines they are required to have a fast response to fit the short shaping time of 25 ns and to be radiation hard. Evaluation of silicon microstrip detectors developed for the ATLAS silicon tracker and carried out under collaboration of CERN and PTI has shown the reversal of the pulse polarity in the detector response to short- range radiation. Since the negative signal is of about 30% of the normal positive one, the effect strongly reduces the charge collection efficiency in irradiated detectors. The investigation presents the consideration on the origin of a negative response in Si microstrip detectors and the experimental proof of the model. The study of the effect has been carried out using "baby" strip detectors with a special design: each strip has a window in a metallization, which covers the p/sup +/ implant. The sca...

Commissioning and first data with the ATLAS silicon microstrip tracker

International Nuclear Information System (INIS)

Rohne, Ole Myren

2010-01-01

The ATLAS experiment at the CERN large hadron collider (LHC) has started taking data this autumn with the inauguration of the LHC. The semiconductor tracker (SCT) is the key precision tracking device in ATLAS, made up from silicon micro-strip detectors processed in the planar p-in-n technology. The completed SCT has recently been installed inside the ATLAS experimental hall. Quick tests were performed last year to verify the connectivity of the electrical and optical services. Problems observed with the heaters for the evaporative cooling system have been resolved. This has enabled extended operation of the full detector under realistic conditions. Calibration data has been taken and analysed to determine the noise performance of the system. In addition, extensive commissioning with cosmic ray events has been performed. The cosmic muon data has been used to align the detector, to check the timing of the front-end electronics as well as to measure the hit efficiency of modules. The current status of the SCT will be reviewed, including results from the latest data-taking periods in autumn 2008, and from the detector alignment. We will report on the commissioning of the detector, including overviews on services, connectivity and observed problems. Particular emphasis will also be placed on the SCT data taken in the latest running period with the entire ATLAS detector participating. The SCT commissioning and running experience will then be used to extract valuable lessons for future silicon strip detector projects.

Scientific performances of the XAA1.2 front-end chip for silicon microstrip detectors

International Nuclear Information System (INIS)

Del Monte, Ettore; Soffitta, Paolo; Morelli, Ennio; Pacciani, Luigi; Porrovecchio, Geiland; Rubini, Alda; Uberti, Olga; Costa, Enrico; Di Persio, Giuseppe; Donnarumma, Immacolata; Evangelista, Yuri; Feroci, Marco; Lazzarotto, Francesco; Mastropietro, Marcello; Rapisarda, Massimo

2007-01-01

The XAA1.2 is a custom ASIC chip for silicon microstrip detectors adapted by Ideas for the SuperAGILE instrument on board the AGILE space mission. The chip is equipped with 128 input channels, each one containing a charge preamplifier, shaper, peak detector and stretcher. The most important features of the ASIC are the extended linearity, low noise and low power consumption. The XAA1.2 underwent extensive laboratory testing in order to study its commandability and functionality and evaluate its scientific performances. In this paper we describe the XAA1.2 features, report the laboratory measurements and discuss the results emphasizing the scientific performances in the context of the SuperAGILE front-end electronics

Test of the CMS microstrip silicon tracker readout and control system

CERN Document Server

Zghiche, A

2001-01-01

The Microstrip Silicon tracker of the CMS detector is designed to provide robust particle tracking and vertex reconstruction within a strong magnetic field in the high luminosity environment of the LHC. The Tracker readout system employs Front-End Driver cards to digitize and buffer the analogue data arriving via optical links from on detector pipeline chips. The control chain of the front-end electronic is built to operate via optical fibers in order to shield the communications from the outside noise. Components close to the final design have been assembled to be tested in the X5 beam area at CERN where a dedicated 25 ns temporal structure beam has been made available by the SPS. This paper describes the hardware and the software developed for readout and control of data acquired by the front-end electronics operating at 40 MHz, Some preliminary results of the tests performed in the 25 ns beam are also given. (8 refs).

A possible role for silicon microstrip detectors in nuclear medicine Compton imaging of positron emitters

CERN Document Server

Scannavini, M G; Royle, G J; Cullum, I; Raymond, M; Hall, G; Iles, G

2002-01-01

Collimation of gamma-rays based on Compton scatter could provide in principle high resolution and high sensitivity, thus becoming an advantageous method for the imaging of radioisotopes of clinical interest. A small laboratory prototype of a Compton camera is being constructed in order to initiate studies aimed at assessing the feasibility of Compton imaging of positron emitters. The design of the camera is based on the use of a silicon collimator consisting of a stack of double-sided, AC-coupled microstrip detectors (area 6x6 cm sup 2 , 500 mu m thickness, 128 channels/side). Two APV6 chips are employed for signal readout on opposite planes of each detector. This work presents the first results on the noise performance of the silicon strip detectors. Measurements of the electrical characteristics of the detector are also reported. On the basis of the measured noise, an angular resolution of approximately 5 deg. is predicted for the Compton collimator.

Development and operation of a novel PC-based high speed beam telescope for particle tracking using double sided silicon microstrip detectors

International Nuclear Information System (INIS)

Treis, J.

2002-08-01

A PC based high speed silicon microstrip beam telescope consisting of several independent modules is presented. Every module contains an AC-coupled double sided silicon microstrip sensor and a complete set of analog and digital signal processing electronics. A digital bus connects the modules with the DAQ PC. A trigger logic unit coordinates the operation of all modules of the telescope. The system architecture allows easy integration of any kind of device under test into the data acquisition chain. Signal digitization, pedestal correction, hit detection and zero suppression are done by hardware inside the modules, so that the amount of data per event is reduced by a factor of 80 compared to conventional readout systems. In combination with a two level data acquisition scheme, this allows event rates up to 7.6 kHz. This is a factor of 40 faster than conventional VME based beam telescopes while comparable analog performance is maintained achieving signal to noise ratios of up to 70:1. The telescope has been tested in the SPS testbeam at CERN. It has been adopted as the reference instrument for testbeam studies for the ATLAS pixel detector development. (orig.)

Silicon sensor probing and radiation studies for the LHCb silicon tracker

International Nuclear Information System (INIS)

Lois, Cristina

2006-01-01

The LHCb Silicon Tracker (ST) will be built using silicon micro-strip technology. A total of 1400 sensors, with strip pitches of approximately 200μm and three different substrate thicknesses, will be used to cover the sensitive area with readout strips up to 38cm in length. We present the quality assurance program followed by the ST group together with the results obtained for the first batches of sensors from the main production. In addition, we report on an investigation of the radiation hardness of the sensors. Prototype sensors were irradiated with 24GeV/c protons up to fluences equivalent to 20 years of LHCb operation. The damage coefficient for the leakage current was studied, and full depletion voltages were determined

The CMS silicon strip tracker

International Nuclear Information System (INIS)

Focardi, E.; Albergo, S.; Angarano, M.; Azzi, P.; Babucci, E.; Bacchetta, N.; Bader, A.; Bagliesi, G.; Bartalini, P.; Basti, A.; Biggeri, U.; Bilei, G.M.; Bisello, D.; Boemi, D.; Bosi, F.; Borrello, L.; Bozzi, C.; Braibant, S.; Breuker, H.; Bruzzi, M.; Candelori, A.; Caner, A.; Castaldi, R.; Castro, A.; Catacchini, E.; Checcucci, B.; Ciampolini, P.; Civinini, C.; Creanza, D.; D'Alessandro, R.; Da Rold, M.; Demaria, N.; De Palma, M.; Dell'Orso, R.; Marina, R. Della; Dutta, S.; Eklund, C.; Elliott-Peisert, A.; Feld, L.; Fiore, L.; French, M.; Freudenreich, K.; Fuertjes, A.; Giassi, A.; Giraldo, A.; Glessing, B.; Gu, W.H.; Hall, G.; Hammerstrom, R.; Hebbeker, T.; Hrubec, J.; Huhtinen, M.; Kaminsky, A.; Karimaki, V.; Koenig, St.; Krammer, M.; Lariccia, P.; Lenzi, M.; Loreti, M.; Luebelsmeyer, K.; Lustermann, W.; Maettig, P.; Maggi, G.; Mannelli, M.; Mantovani, G.; Marchioro, A.; Mariotti, C.; Martignon, G.; Evoy, B. Mc; Meschini, M.; Messineo, A.; My, S.; Paccagnella, A.; Palla, F.; Pandoulas, D.; Parrini, G.; Passeri, D.; Pieri, M.; Piperov, S.; Potenza, R.; Raffaelli, F.; Raso, G.; Raymond, M.; Santocchia, A.; Schmitt, B.; Selvaggi, G.; Servoli, L.; Sguazzoni, G.; Siedling, R.; Silvestris, L.; Skog, K.; Starodumov, A.; Stavitski, I.; Stefanini, G.; Tempesta, P.; Tonelli, G.; Tricomi, A.; Tuuva, T.; Vannini, C.; Verdini, P.G.; Viertel, G.; Xie, Z.; Wang, Y.; Watts, S.; Wittmer, B.

1999-01-01

The Silicon Strip Tracker (SST) is the intermediate part of the CMS Central Tracker System. SST is based on microstrip silicon devices and in combination with pixel detectors and the Microstrip Gas Chambers aims at performing pattern recognition, track reconstruction and momentum measurements for all tracks with p T ≥2 GeV/c originating from high luminosity interactions at √s=14 TeV at LHC. We aim at exploiting the advantages and the physics potential of the precise tracking performance provided by the microstrip silicon detectors on a large scale apparatus and in a much more difficult environment than ever. In this paper we describe the actual SST layout and the readout system. (author)

Design and development of a vertex reconstruction for the CMS (Compact Muon Solenoid) data. Study of gaseous and silicon micro-strips detectors (MSGC); Conception d'un algorithme de reconstruction de vertex pour les donnees de CMS. Etude de detecteurs gazeux (MSGC) et silicium a micropistes

Energy Technology Data Exchange (ETDEWEB)

Moreau, St

2002-12-01

The work presented in this thesis has contributed to the development of the Compact Muon Solenoid detector (CMS) that will be installed at the future Large Hadron Collider (LHC) which will start running in summer 2007. This report is organised in three parts: the study of gaseous detectors and silicon micro-strips detectors, and a development of a software for the reconstruction and analysis of CMS data in the framework of ORCA. First, the micro-strips gaseous detectors (MSGC) study was on the ultimate critical irradiation test before their substitution in the CMS tracker. This test showed a really small number of lost anodes and a stable signal to noise ratio. This test proved that the described MSGC fulfill all the requirements to be integrated in the CMS tracker. The following contribution described a study of silicon micro-strips detectors and its electronics exposed to a 40 MHz bunched LHC like beam. These tests indicated a good behaviour of the data acquisition and control system. The signal to noise ratio, the bunch crossing identification and the cluster finding efficiency had also be analysed. The last study concern the design and the development of an ORCA algorithm dedicates to secondary vertex reconstruction. This iterative algorithm aims to be use for b tagging. This part analyse also primary vertex reconstruction in events without and with pile up. (author)

Irradiation effects of swift heavy ions on gallium arsenide, silicon and silicon diodes

International Nuclear Information System (INIS)

Bhoraskar, V.N.

2001-01-01

The irradiation effects of high energy lithium, boron, oxygen and silicon ions on crystalline silicon, gallium arsenide, porous silicon and silicon diodes were investigated. The ion energy and fluence were varied over the ranges 30 to 100 MeV and 10 11 to 10 14 ions/cm 2 respectively. Semiconductor samples were characterized with the x-ray fluorescence, photoluminescence, thermally stimulated exo-electron emission and optical reflectivity techniques. The life-time of minority carriers in crystalline silicon was measured with a pulsed electron beam and the lithium depth distribution in GaAs was measured with the neutron depth profiling technique. The diodes were characterized through electrical measurements. The results of optical reflectivity, life-time of minority carriers and photoluminescence show that swift heavy ions induce defects in the surface region of crystalline silicon. In the ion-irradiated GaAs, migration of silicon, oxygen and lithium atoms from the buried region towards the surface was observed, with orders of magnitude enhancement in the diffusion coefficients. Enhancement in the photoluminescence intensity was observed in the GaAs and porous silicon samples that, were irradiated with silicon ions. The trade-off between the turn-off time and the voltage, drop in diodes irradiated with different swift heavy ions was also studied. (author)

Effect of gamma irradiation on the photoluminescence of porous silicon

Energy Technology Data Exchange (ETDEWEB)

Elistratova, M. A., E-mail: Marina.Elistratova@mail.ioffe.ru; Romanov, N. M. [Peter the Great St. Petersburg Polytechnic University (Russian Federation); Goryachev, D. N. [Russian Academy of Sciences, Ioffe Institute (Russian Federation); Zakharova, I. B. [Peter the Great St. Petersburg Polytechnic University (Russian Federation); Sreseli, O. M. [Russian Academy of Sciences, Ioffe Institute (Russian Federation)

2017-04-15

The effect of gamma irradiation on the luminescence properties of porous silicon produced by the electrochemical technique is studied. Changes in the photoluminescence intensity between irradiation doses and over a period of several days after the last irradiation are recorded. The quenching of photoluminescence at low irradiation doses and recovery after further irradiation are registered. It is found that porous silicon is strongly oxidized after gamma irradiation and the oxidation process continues for several days after irradiation. It is conceived that the change in the photoluminescence spectra and intensity of porous silicon after gamma irradiation is caused by a change in the passivation type of the porous surface: instead of hydrogen passivation, more stable oxygen passivation is observed. To stabilize the photoluminescence spectra of porous silicon, the use of fullerenes is proposed. No considerable changes in the photoluminescence spectra during irradiation and up to 18 days after irradiation are detected in a porous silicon sample with a thermally deposited fullerene layer. It is shown that porous silicon samples with a deposited C{sub 60} layer are stable to gamma irradiation and oxidation.

Silicon Tracker Design for the ILC

International Nuclear Information System (INIS)

Nelson, T.; SLAC

2005-01-01

The task of tracking charged particles in energy frontier collider experiments has been largely taken over by solid-state detectors. While silicon microstrip trackers offer many advantages in this environment, large silicon trackers are generally much more massive than their gaseous counterparts. Because of the properties of the machine itself, much of the material that comprises a typical silicon microstrip tracker can be eliminated from a design for the ILC. This realization is the inspiration for a tracker design using lightweight, short, mass-producible modules to tile closed, nested cylinders with silicon microstrips. This design relies upon a few key technologies to provide excellent performance with low cost and complexity. The details of this concept are discussed, along with the performance and status of the design effort

Characterization of silicon microstrip sensors with a pulsed infrared laser system for the CBM experiment at FAIR

Energy Technology Data Exchange (ETDEWEB)

Ghosh, Pradeep [Goethe Univ., Frankfurt (Germany); GSI (Germany); Eschke, Juergen [GSI (Germany); FAIR (Germany); Collaboration: CBM-Collaboration

2014-07-01

The Silicon Tracking System (STS) for the Compressed Baryonic Matter (CBM) experiment at FAIR will comprise more than 1200 double-sided silicon microstrip sensors. For the quality assurance of the prototype sensors a laser test system has been built up. The aim of the sensor scans with the pulsed infrared laser system is to determine the charge sharing between strips and to measure the uniformity of the sensor response over the whole active area. The laser system measures the sensor response in an automatized procedure at several thousand positions across the sensor with focused infrared laser light (σ∼15 μm, λ=1060 nm). The duration (5 ns) and power (few mW) of the laser pulses are selected such, that the absorption of the laser light in the 300 μm thick silicon sensors produces a number of about 24k electrons, which is similar to the charge created by minimum ionizing particles in these sensors. Results from the characterization of monolithic active pixel sensors, to understand the spot-size of the laser, and laser scans for different sensors are presented.

A VLSI front-end circuit for microstrip silicon detectors for medical imaging applications

International Nuclear Information System (INIS)

Beccherle, R.; Cisternino, A.; Guerra, A. Del; Folli, M.; Marchesini, R.; Bisogni, M.G.; Ceccopieri, A.; Rosso, V.; Stefanini, A.; Tripiccione, R.; Kipnis, I.

1999-01-01

An analog CMOS-Integrated Circuit has been developed as Front-End for a double-sided microstrip silicon detector. The IC processes and discriminates signals in the 5-30 keV energy range. Main features are low noise and precise timing information. Low noise is achieved by optimizing the cascoded integrator with the 8 pF detector capacitance and by using an inherently low noise 1.2 μm CMOS technology. Timing information is provided by a double discriminator architecture. The output of the circuit is a digital pulse. The leading edge is determined by a fixed threshold discriminator, while the trailing edge is provided by a zero crossing discriminator. In this paper we first describe the architecture of the Front-End chip. We then present the performance of the chip prototype in terms of noise, minimum discrimination threshold and time resolution

The CMS silicon tracker

International Nuclear Information System (INIS)

Focardi, E.; Albergo, S.; Angarano, M.; Azzi, P.; Babucci, E.; Bacchetta, N.; Bader, A.; Bagliesi, G.; Basti, A.; Biggeri, U.; Bilei, G.M.; Bisello, D.; Boemi, D.; Bosi, F.; Borrello, L.; Bozzi, C.; Braibant, S.; Breuker, H.; Bruzzi, M.; Buffini, A.; Busoni, S.; Candelori, A.; Caner, A.; Castaldi, R.; Castro, A.; Catacchini, E.; Checcucci, B; Ciampolini, P.; Civinini, C.; Creanza, D.; D'Alessandro, R.; Da Rold, M.; Demaria, N.; De Palma, M.; Dell'Orso, R.; Della Marina, R.; Dutta, S.; Eklund, C.; Feld, L.; Fiore, L.; French, M.; Freudenreich, K.; Frey, A.; Fuertjes, A.; Giassi, A.; Giorgi, M.; Giraldo, A.; Glessing, B.; Gu, W.H.; Hall, G.; Hammarstrom, R.; Hebbeker, T.; Honma, A.; Hrubec, J.; Huhtinen, M.; Kaminsky, A.; Karimaki, V.; Koenig, St.; Krammer, M.; Lariccia, P.; Lenzi, M.; Loreti, M.; Leubelsmeyer, K.; Lustermann, W.; Maettig, P.; Maggi, G.; Mannelli, M.; Mantovani, G.; Marchioro, A.; Mariotti, C.; Martignon, G.; Evoy, B.Mc; Meschini, M.; Messineo, A.; Migliore, E.; My, S.; Paccagnella, A.; Palla, F.; Pandoulas, D.; Papi, A.; Parrini, G.; Passeri, D.; Pieri, M.; Piperov, S.; Potenza, R.; Radicci, V.; Raffaelli, F.; Raymond, M.; Rizzo, F.; Santocchia, A.; Schmitt, B.; Selvaggi, G.; Servoli, L.; Sguazzoni, G.; Siedling, R.; Silvestris, L.; Starodumov, A.; Stavitski, I.; Stefanini, G.; Surrow, B.; Tempesta, P.; Tonelli, G.; Tricomi, A.; Tuuva, T.; Vannini, C.; Verdini, P.G.; Viertel, G.; Xie, Z.; Yahong, Li; Watts, S.; Wittmer, B.

2000-01-01

This paper describes the Silicon microstrip Tracker of the CMS experiment at LHC. It consists of a barrel part with 5 layers and two endcaps with 10 disks each. About 10 000 single-sided equivalent modules have to be built, each one carrying two daisy-chained silicon detectors and their front-end electronics. Back-to-back modules are used to read-out the radial coordinate. The tracker will be operated in an environment kept at a temperature of T=-10 deg. C to minimize the Si sensors radiation damage. Heavily irradiated detectors will be safely operated due to the high-voltage capability of the sensors. Full-size mechanical prototypes have been built to check the system aspects before starting the construction

Enabling Technologies for Silicon Microstrip Tracking Detectors at the HL-LHC

CERN Document Server

Barth, C; Bloch, I.; Bögelspacher, F.; de Boer, W.; Daniels, M.; Dierlamm, A.; Eber, R.; Eckerlin, G.; Eckstein, D.; Eichhorn, T.; Erfle, J.; Feld, L.; Garutti, E.; Gregor, I. -M.; Guthoff, M.; Hartmann, F.; Hauser, M.; Husemann, U.; Jakobs, K.; Junkes, A.; Karpinski, W.; Klein, K.; Kuehn, S.; Lacker, H.; Mahboubi, K.; Müller, Th.; Mussgiller, A.; Nürnberg, A.; Parzefall, U.; Poehlsen, T.; Poley, L.; Preuten, M.; Rehnisch, L.; Sammet, J.; Schleper, P.; Schuwalow, S.; Sperlich, D.; Stanitzki, M.; Steinbrück, G.; Wlochal, M.

2016-01-01

While the tracking detectors of the ATLAS and CMS experiments have shown excellent performance in Run 1 of LHC data taking, and are expected to continue to do so during LHC operation at design luminosity, both experiments will have to exchange their tracking systems when the LHC is upgraded to the high-luminosity LHC (HL-LHC) around the year 2024. The new tracking systems need to operate in an environment in which both the hit densities and the radiation damage will be about an order of magnitude higher than today. In addition, the new trackers need to contribute to the first level trigger in order to maintain a high data-taking efficiency for the interesting processes. Novel detector technologies have to be developed to meet these very challenging goals. The German groups active in the upgrades of the ATLAS and CMS tracking systems have formed a collaborative "Project on Enabling Technologies for Silicon Microstrip Tracking Detectors at the HL-LHC" (PETTL), which was supported by the Helmholtz Alliance "Phys...

The depletion properties of silicon microstrip detectors with variable strip pitch

International Nuclear Information System (INIS)

Krizmanic, J.F.

1994-01-01

We have investigated the depletion properties of trapezoidal shaped silicon microstrip detectors which have variable strip pitch. Four types of detectors were examined: three detectors have constant strip width and a fourth has a varying strip width. The detectors are single sided with readout performed via p + strips. The depletion properties of the devices were measured using two different methods. The first used capacitance versus voltage measurements, while the second used a 1060 nm wavelength laser coupled to a single mode fiber with a mode field diameter less than 10 μm. The small laser spot size allowed for the depletion depth to be measured in a localized area of the detector. The laser induced charge on an electrode was measured as a function of reverse bias voltage using a sensitive charge preamplifier. The depletion voltages of the detectors demonstrate a strong dependence upon the ratio of strip width to strip pitch. Moreover, these measurements show that a large value of this ratio yields a lower depletion voltage and vice versa. (orig.)

Internal friction in irradiated silicon

International Nuclear Information System (INIS)

Kalanov, M.U.; Pajzullakhanov, M.S.; Khajdarov, T.; Ummatov, Kh.

1999-01-01

The submicroscopic heterogeneities in mono- and polycrystal silicon and the influence of X-ray radiation on them were investigated using the ultrasound resonance method. Disk-shaped samples of 27.5 mm in diameter and 4 mm in thickness, with the flat surface parallel to crystallographic plane (111), were irradiated by X-ray beam of 1 Wt/cm 2 (50 KeV, Mo K α ) during 10 hours. Relations of internal frictions (Q -1 ) of samples and their relative attitude (ψ) - Q -1 (ψ) show that there is a presence of double-humped configuration for monocrystal silicon with the peaks at ψ=900 and 270 degrees. The relations Q -1 (ψ) remain the same after the irradiation. However, the peak width becomes larger. This data show that the configuration and attitude of the heterogeneities remain the same after the irradiation. The double-humped configuration was not discovered for the relations Q -1 (ψ) of polycrystal silicon. It is explained by the fact that there is an isotropic distribution in the content of many blocks and granules

Towards Gotthard-II: development of a silicon microstrip detector for the European X-ray Free-Electron Laser

Science.gov (United States)

Zhang, J.; Andrä, M.; Barten, R.; Bergamaschi, A.; Brückner, M.; Dinapoli, R.; Fröjdh, E.; Greiffenberg, D.; Lopez-Cuenca, C.; Mezza, D.; Mozzanica, A.; Ramilli, M.; Redford, S.; Ruat, M.; Ruder, C.; Schmitt, B.; Shi, X.; Thattil, D.; Tinti, G.; Turcato, M.; Vetter, S.

2018-01-01

Gotthard-II is a 1-D microstrip detector specifically developed for the European X-ray Free-Electron Laser. It will not only be used in energy dispersive experiments but also as a beam diagnostic tool with additional logic to generate veto signals for the other 2-D detectors. Gotthard-II makes use of a silicon microstrip sensor with a pitch of either 50 μm or 25 μm and with 1280 or 2560 channels wire-bonded to adaptive gain switching readout chips. Built-in analog-to-digital converters and digital memories will be implemented in the readout chip for a continuous conversion and storage of frames for all bunches in the bunch train. The performance of analogue front-end prototypes of Gotthard has been investigated in this work. The results in terms of noise, conversion gain, dynamic range, obtained by means of infrared laser and X-rays, will be shown. In particular, the effects of the strip-to-strip coupling are studied in detail and it is found that the reduction of the coupling effects is one of the key factors for the development of the analogue front-end of Gotthard-II.

Beam splash effects on ATLAS silicon microstrip detectors evaluated using 1-w Nd YAG laser

CERN Document Server

Hara, K; Kohriki, T; Kuwano, T; Moorhead, G F; Terada, S; Unno, Y

2005-01-01

On an incident of accelerator beam loss, the tracking detector located close to the beam line is subjected to receive intensive radiation in a short period. We used a 1-W focused Nd: YAG laser and simulated the effects on the ATLAS microstrip detector. The laser corresponds to intensity of up to 1 multiplied by 109mips/pulse with a pulse width of about 10 ns. We observed breaks on Al strips on extreme conditions, depending on the laser intensity and bias voltage applied to the silicon sensor. The break can be interpreted as the oxide breakdown due to a large voltage locally created across the oxide by the intensive signal charges. The robustness of the Semiconductor Tracker (SCT) module including readout ASICs is also evaluated.

The intrinsic gettering in neutron irradiation Czochralski-silicon

CERN Document Server

Li Yang Xian; Niu Ping Juan; Liu Cai Chi; Xu Yue Sheng; Yang Deren; Que Duan Lin

2002-01-01

The intrinsic gettering in neutron irradiated Czochralski-silicon is studied. The result shows that a denuded zone at the surface of the neutron irradiated Czochralski-silicon wafer may be formed through one-step short-time annealing. The width of the denuded zone is dependent on the annealing temperature and the dose of neutron irradiation, while it is irrelated to the annealing time in case the denuded zone is formed. The authors conclude that the interaction between the defects induced by neutron irradiation and the oxygen in the silicon accelerates the oxygen precipitation in the bulk, and becomes the dominating factor of the quick formation of intrinsic gettering. It makes the effect of thermal history as the secondary factor

Femtosecond laser irradiation-induced infrared absorption on silicon surfaces

Directory of Open Access Journals (Sweden)

Qinghua Zhu

2015-04-01

Full Text Available The near-infrared (NIR absorption below band gap energy of crystalline silicon is significantly increased after the silicon is irradiated with femtosecond laser pulses at a simple experimental condition. The absorption increase in the NIR range primarily depends on the femtosecond laser pulse energy, pulse number, and pulse duration. The Raman spectroscopy analysis shows that after the laser irradiation, the silicon surface consists of silicon nanostructure and amorphous silicon. The femtosecond laser irradiation leads to the formation of a composite of nanocrystalline, amorphous, and the crystal silicon substrate surface with microstructures. The composite has an optical absorption enhancement at visible wavelengths as well as at NIR wavelength. The composite may be useful for an NIR detector, for example, for gas sensing because of its large surface area.

Degradation of charge sharing after neutron irradiation in strip silicon detectors with different geometries

International Nuclear Information System (INIS)

Casse, G.; Dervan, P.; Forshaw, D.; Greenall, A.; Huse, T.; Tsurin, I.; Wormald, M.

2013-01-01

The aim of the CERN/RD50 collaboration is the improvement of the radiation tolerance of semiconductor detectors for future experiments at high-luminosity colliders. In the RD50 framework, evidence of enhanced signal charge in severely irradiated silicon detectors (diodes, segmented planar and 3D devices) was found. The underlying mechanism was labelled charge multiplication. This has been one of the most exciting results from the research activity of RD50 because it could allow for a greatly extended radiation tolerance, if the mechanism is to be found controllable and tuneable. The charge multiplication mechanism is governed by impact ionisation from electrons drifting in high electric field. The electric field profile is influenced by the geometry of the implanted electrodes. In order to investigate the influence of the diode implantation geometry on charge multiplication, the RD50 collaboration has commissioned the production of miniature microstrip silicon sensors with various choices of strip pitch and strip width over pitch (w/p) ratios. Moreover, some of the sensors were produced interleaving readout strips with dummy intermediate ones in order to modify the electric field profile. These geometrical solutions can influence both charge multiplication and charge sharing between adjacent strips. The initial results of this study are here presented

Test-beam evaluation of heavily irradiated silicon strip modules for ATLAS Phase-II Strip Tracker Upgrade

CERN Document Server

Blue, Andrew; The ATLAS collaboration

2018-01-01

The planned HL-LHC (High Luminosity LHC) is being designed to maximise the physics potential of the LHC with 10 years of operation at instantaneous luminosities of 7.5x1034cm−2s−1. A consequence of this increased luminosity is the expected radiation damage requiring the tracking detectors to withstand hadron equivalences to over 1x1015 1 MeV neutron equivalent per cm2 in the ATLAS Strips system. The silicon strip tracker exploits the concept of modularity. Fast readout electronics, deploying 130nm CMOS front-end electronics are glued on top of a silicon sensor to make a module. The radiation hard n-in-p micro-strip sensors used have been developed by the ATLAS ITk Strip Sensor collaboration and produced by Hamamatsu Photonics. A series of tests were performed at the DESY-II and CERN SPS test beam facilities to investigate the detailed performance of a strip module with both 2.5cm and 5cm length strips before and after irradiation with 8x1014neqcm−2 protons and a total ionising dose of 37.2MRad. The DURA...

Formation of porous silicon oxide from substrate-bound silicon rich silicon oxide layers by continuous-wave laser irradiation

Science.gov (United States)

Wang, Nan; Fricke-Begemann, Th.; Peretzki, P.; Ihlemann, J.; Seibt, M.

2018-03-01

Silicon nanocrystals embedded in silicon oxide that show room temperature photoluminescence (PL) have great potential in silicon light emission applications. Nanocrystalline silicon particle formation by laser irradiation has the unique advantage of spatially controlled heating, which is compatible with modern silicon micro-fabrication technology. In this paper, we employ continuous wave laser irradiation to decompose substrate-bound silicon-rich silicon oxide films into crystalline silicon particles and silicon dioxide. The resulting microstructure is studied using transmission electron microscopy techniques with considerable emphasis on the formation and properties of laser damaged regions which typically quench room temperature PL from the nanoparticles. It is shown that such regions consist of an amorphous matrix with a composition similar to silicon dioxide which contains some nanometric silicon particles in addition to pores. A mechanism referred to as "selective silicon ablation" is proposed which consistently explains the experimental observations. Implications for the damage-free laser decomposition of silicon-rich silicon oxides and also for controlled production of porous silicon dioxide films are discussed.

An Uncoventional Approach for a Straw Tube-Microstrip Detector

OpenAIRE

Basile, E.; Bellucci, F.; Benussi, L.; Bertani, M.; Bianco, S.; Caponero, M. A.; Colonna, D.; Di Falco, F.; Fabbri, F. L.; Felli, F.; Giardoni, M.; La Monaca, A.; Mensitieri, G.; Ortenzi, B.; Pallotta, M.

2004-01-01

We report on a novel concept of silicon microstrips and straw tubes detector, where integration is accomplished by a straw module with straws not subjected to mechanical tension in a Rohacell lattice and carbon fiber reinforced plastic shell. Results on mechanical and test beam performances are reported on as well.

Effect of γ irradiation on the photoluminescence kinetics of porous silicon

International Nuclear Information System (INIS)

Agekyan, V.F.; Stepanov, Yu.A.; Emtsev, V.V.; Lebedev, A.A.; Poloskin, D.S.; Remenyuk, A.D.

1999-01-01

The effect of γ irradiation on the photoluminescence decay dynamics in porous silicon is investigated. Growth of the photoluminescence intensity and decrease of the decay time in irradiated porous silicon are explained by a lowering of the barriers to recombination of spatially separated electrons and holes via tunneling. The γ irradiation of porous silicon leads to a greater dispersion of the decay time

Automatically controlled facilities for irradiation of silicon crystals at the Rossendorf Research Reactor

International Nuclear Information System (INIS)

Ross, R.

1988-01-01

This report describes the facilities for neutron transmutation doping of silicon in GDR. The irradiation of silicon single crystals began at Rossendorf in 1978 with simple equipment. Only a small amount of silicon could be irradiated in it. The fast increasing need of NTD-silicon made it necessary to design and construct new and better facilities. The new facilities are capable of irradiating silicon from 2'' to 3'' in diameter. The irradiation process takes place automatically with the assistance of a computer. Material produced has an axial homogeneity of ± 7%. Irradiation riggs, techniques, irradiation control and quality control are discussed. (author). 4 figs

Suppression of irradiation effects in gold-doped silicon detectors

International Nuclear Information System (INIS)

McPherson, M.; Sloan, T.; Jones, B.K.

1997-01-01

Two sets of silicon detectors were irradiated with 1 MeV neutrons to different fluences and then characterized. The first batch were ordinary p-i-n photodiodes fabricated from high-resistivity (400 Ω cm) silicon, while the second batch were gold-doped powder diodes fabricated from silicon material initially of low resistivity (20 Ω cm). The increase in reverse leakage current after irradiation was found to be more in the former case than in the latter. The fluence dependence of the capacitance was much more pronounced in the p-i-n diodes than in the gold-doped diodes. Furthermore, photo current generation by optical means was less in the gold doped devices. All these results suggest that gold doping in silicon somewhat suppresses the effects of neutron irradiation. (author)

The LHCb Silicon Tracker

Energy Technology Data Exchange (ETDEWEB)

Tobin, Mark, E-mail: Mark.Tobin@epfl.ch

2016-09-21

The LHCb experiment is dedicated to the study of heavy flavour physics at the Large Hadron Collider (LHC). The primary goal of the experiment is to search for indirect evidence of new physics via measurements of CP violation and rare decays of beauty and charm hadrons. The LHCb detector has a large-area silicon micro-strip detector located upstream of a dipole magnet, and three tracking stations with silicon micro-strip detectors in the innermost region downstream of the magnet. These two sub-detectors form the LHCb Silicon Tracker (ST). This paper gives an overview of the performance and operation of the ST during LHC Run 1. Measurements of the observed radiation damage are shown and compared to the expectation from simulation.

Flexural strength of proof-tested and neutron-irradiated silicon carbide

Science.gov (United States)

Price, R. J.; Hopkins, G. R.

1982-08-01

Proof testing before service is a valuable method for ensuring the reliability of ceramic structures. Silicon carbide has been proposed as a very low activation first-wall and blanket structural material for fusion devices, where it would experience a high flux of fast neutrons. Strips of three types of silicon carbide were loaded in four-point bending to a stress sufficient to break about a third of the specimens. Groups of 16 survivors were irradiated to 2 × 10 26n/ m2 ( E>0.05 MeV) at 740°C and bend tested to failure. The strength distribution of chemically vapor-deposited silicon carbide (Texas Instruments) was virtually unchanged by irradiation. The mean strength of sintered silicon carbide (Carborundum Alpha) was reduced 34% by irradiation, while the Weibull modulus and the truncated strength distribution characteristic of proof-tested material were retained. Irradiation reduced the mean strength of reaction-bonded silicon carbide (Norton NC-430) by 58%, and the spread in strength values was increased. We conclude that for the chemically vapor-deposited and the sintered silicon carbide the benefits of proof testing to eliminate low strength material are retained after high neutron exposures.

A Novel Approach for an Integrated Straw Tube-Microstrip Detector

Science.gov (United States)

Basile, E.; Bellucci, F.; Benussi, L.; Bertani, M.; Bianco, S.; Caponero, M. A.; Colonna, D.; Di Falco, F.; Fabbri, F. L.; Felli, F.; Giardoni, M.; La Monaca, A.; Mensitieri, G.; Ortenzi, B.; Pallotta, M.; Paolozzi, A.; Passamonti, L.; Pierluigi, D.; Pucci, C.; Russo, A.; Saviano, G.; Casali, F.; Bettuzzi, M.; Bianconi, D.; Baruffaldi, F.; Perilli, E.; Massa, F.

2006-06-01

We report on a novel concept of silicon microstrips and straw tubes detector, where integration is accomplished by a straw module with straws not subjected to mechanical tension in a Rohacell/spl reg/ lattice and carbon fiber reinforced plastic shell. Results on mechanical and test beam performances are reported as well.

Production of ALICE microstrip detectors at ITC-irst

International Nuclear Information System (INIS)

Gregori, Paolo; Bellutti, Pierluigi; Boscardin, Maurizio; Collini, Amos; Dalla Betta, Gian-Franco; Pucker, Georg; Zorzi, Nicola

2007-01-01

We report on the results from the production of 600 double-sided silicon microstrip detectors for the ALICE experiment. We present the fabrication process and some selected results from the electrical characterization of detectors and test structures. The large amount of experimental data allowed a statistically relevant analysis to be performed. The main technological aspects related to production yield optimization will also be addressed

Temperature detectors on irradiated silicon base

International Nuclear Information System (INIS)

Karimov, M.; Dzhalelov, M.A.; Kurbanov, A.O.

2005-01-01

It is well known, that the most suitable for thermal resistors production is compensated silicon with impurities forming deep lying in forbidden zone, having big negative resistance temperature coefficients (RTC). In the capacity of initial materials for thermal resistors with negative RTC the n-type monocrystalline silicon with specific resistance ∼30 Ω·cm at 300 K is applied. Before the irradiation the phosphorus diffusion is realizing at temperature ∼1000 deg. C for 10 min. Irradiation is putting into practise by WWR-SM reactor fast neutrons within the range (7-10)·10 13 cm -2 . The produced resistors have nominal resistance range (8-20)·10 3 Ω·cm, coefficient of the thermal sensitivity B=4000-6000 deg. C., RTC α 300K =4-6.6 %/grad. It is shown, that offered method allows to obtain same type resistors characteristics on the base of neutron-irradiated material

A Novel Approach for an Integrated Straw tube-Microstrip Detector

OpenAIRE

Basile, E.; Bellucci, F.; Benussi, L.; Bertani, M.; Bianco, S.; Caponero, M. A.; Colonna, D.; Di Falco, F.; Fabbri, F. L.; Felli, F.; Giardoni, M.; La Monaca, A.; Mensitieri, G.; Ortenzi, B.; Pallotta, M.

2005-01-01

We report on a novel concept of silicon microstrips and straw tubes detector, where integration is accomplished by a straw module with straws not subjected to mechanical tension in a Rohacell $^{\\circledR}$ lattice and carbon fiber reinforced plastic shell. Results on mechanical and test beam performances are reported on as well.

P-spray implant optimization for the fabrication of n-in-p microstrip detectors

International Nuclear Information System (INIS)

Fleta, Celeste; Lozano, Manuel; Pellegrini, Giulio; Campabadal, Francesca; Rafi, Joan Marc; Ullan, Miguel

2007-01-01

This work reports on an optimization study of the p-spray profile for the fabrication of n-in-p microstrip silicon detectors. A thorough simulation process of the expected electrical performance of different p-spray technologies was carried out. The best technological options for the p-spray implantation were chosen for the fabrication of miniature n-in-p microstrip detectors on high resistivity FZ wafers at the IMB-CNM clean room. The main conclusions derived from the simulations, and the electrical performance of a sample of the fabricated devices is presented

Silicon tracker for the compressed baryonic matter experiment

Directory of Open Access Journals (Sweden)

M. S. Borysova

2008-12-01

Full Text Available Design of STS and module prototype of silicon micro-strip detector for particle momenta measurements with a resolution of around Δp/p ≈ 1 % are presented. Very high radiation level and inhomogeneous track distribution result in modular construction of the detector stations. The micro-strip detectors are planned to be read out with the help of СВМ-XYTER chip. The system requirements include radiation tolerant sensors with high spatial resolution and a fast readout compatible with high-level-only triggers. Concept of the silicon detection system and the R&D on micro-strip sensors as well as front-end electronics for the building blocks of the detector stations are discussed.

Characterization of silicon micro-strip sensors with a pulsed infra-red laser system for the CBM experiment at FAIR

Energy Technology Data Exchange (ETDEWEB)

Ghosh, Pradeep [Goethe University, Frankfurt am Main (Germany); GSI Helmholtz Center for Heavy Ion Research GmbH, Darmstadt (Germany); Eschke, Juergen [GSI Helmholtz Center for Heavy Ion Research GmbH, Darmstadt (Germany); Facility for Anti-proton and Ion Research, GmbH, Darmstadt (Germany); Collaboration: CBM-Collaboration

2015-07-01

The Silicon Tracking System (STS) of the CBM experiment at FAIR is composed of 8 tracking stations comprising of 1292 double-sided silicon micro-strip sensors. A Laser Test System (LTS) has been developed for the quality assurance of prototype sensors. The aim is to scan sensors with a pulsed infra-red laser driven by step motor to determine the charge sharing in-between strips and to measure qualitative uniformity of the sensor response over the whole active area. Several prototype sensors with strip pitch of 50 and 58 μm have been tested, as well as a prototype module with realistic mechanical arrangement of sensor and read-out cables. The LTS is designed to measure sensor response in an automatized procedure across the sensor with focused laser beam (spot-size ∼ 12 μm, wavelength = 1060 nm). The pulse with duration (∼ 10 ns) and power (∼ 5 mW) of the laser pulses is selected such, that the absorption of the laser light in the 300 μm thick silicon sensors produces a number of about 24000 electrons, which is similar to the charge created by minimum ionizing particles (MIP) in these sensors. Results from laser scans of prototype sensors and detector module are reported.

Hyperon production in proton-nucleus collisions at a center-of-mass energy of $\\sqrt(S_NN)=41.6 GeV$ at HERA-B and design of silicon microstrip detectors for tracking at LHCb

CERN Document Server

Agari, M

2006-01-01

The topics of this thesis are the measurements of hyperon production in protonnucleus collisions at ps = 41.6 GeV with the Hera-B detector located at DESY, Hamburg (Germany), and the design of silicon microstrip sensors for the LHCb experiment at CERN, Geneva (Switzerland), and hyperons and their antiparticles were reconstructed from 113.5A.106 inelastic collisions of protons with fixed carbon, titanium and tungsten targets. With these samples, antiparticle-to-particle ratios, cross sections integrated for the accessible kinematic region of Hera-B and single differential cross sections as function of transverse momentum, $d\\sigma /dp^{2}_{T}$ (for and) and rapidity, $d\\sigma /dy$ (for only), have been been measured as well as the dependence of these quantities on the atomic number of the target nucleus, as parameterized using the Glauber model. The obtained ratios follow the same trend as found for the energy dependence of measurements from nucleus-nucleus collisions. Silicon microstrip sensors have been desi...

Threshold irradiation dose for amorphization of silicon carbide

Energy Technology Data Exchange (ETDEWEB)

Snead, L.L.; Zinkle, S.J. [Oak Ridge National Lab., TN (United States)

1997-04-01

The amorphization of silicon carbide due to ion and electron irradiation is reviewed with emphasis on the temperature-dependent critical dose for amorphization. The effect of ion mass and energy on the threshold dose for amorphization is summarized, showing only a weak dependence near room temperature. Results are presented for 0.56 MeV silicon ions implanted into single crystal 6H-SiC as a function of temperature and ion dose. From this, the critical dose for amorphization is found as a function of temperature at depths well separated from the implanted ion region. Results are compared with published data generated using electrons and xenon ions as the irradiating species. High resolution TEM analysis is presented for the Si ion series showing the evolution of elongated amorphous islands oriented such that their major axis is parallel to the free surface. This suggests that surface of strain effects may be influencing the apparent amorphization threshold. Finally, a model for the temperature threshold for amorphization is described using the Si ion irradiation flux and the fitted interstitial migration energy which was found to be {approximately}0.56 eV. This model successfully explains the difference in the temperature-dependent amorphization behavior of SiC irradiated with 0.56 MeV silicon ions at 1 x 10{sup {minus}3} dpa/s and with fission neutrons irradiated at 1 x 10{sup {minus}6} dpa/s irradiated to 15 dpa in the temperature range of {approximately}340 {+-} 10K.

Threshold irradiation dose for amorphization of silicon carbide

International Nuclear Information System (INIS)

Snead, L.L.; Zinkle, S.J.

1997-01-01

The amorphization of silicon carbide due to ion and electron irradiation is reviewed with emphasis on the temperature-dependent critical dose for amorphization. The effect of ion mass and energy on the threshold dose for amorphization is summarized, showing only a weak dependence near room temperature. Results are presented for 0.56 MeV silicon ions implanted into single crystal 6H-SiC as a function of temperature and ion dose. From this, the critical dose for amorphization is found as a function of temperature at depths well separated from the implanted ion region. Results are compared with published data generated using electrons and xenon ions as the irradiating species. High resolution TEM analysis is presented for the Si ion series showing the evolution of elongated amorphous islands oriented such that their major axis is parallel to the free surface. This suggests that surface of strain effects may be influencing the apparent amorphization threshold. Finally, a model for the temperature threshold for amorphization is described using the Si ion irradiation flux and the fitted interstitial migration energy which was found to be ∼0.56 eV. This model successfully explains the difference in the temperature-dependent amorphization behavior of SiC irradiated with 0.56 MeV silicon ions at 1 x 10 -3 dpa/s and with fission neutrons irradiated at 1 x 10 -6 dpa/s irradiated to 15 dpa in the temperature range of ∼340 ± 10K

Variation of the properties of siliconized graphite during neutron irradiation

International Nuclear Information System (INIS)

Virgil'ev, Y.S.; Chugunova, T.K.; Pikulik, R.G.

1986-01-01

The authors evaluate the radiation-induced property changes in siliconized graphite of the industrial grades SG-P and SG-M. The authors simultaneously tested the reference (control) specimens of graphite that are used as the base for obtaining the SG-M siliconized graphite by impregnating with silicon. The suggested scheme (model) atributes the dimensional changes of the siliconized graphite specimens to the effect of the quantitative ratio of the carbide phase and carbon under different conditions of irradiation. If silicon is insufficient for the formation of a dense skeleton, graphite plays a devisive role, and it may be assumed that at an irradiation temperature greater than 600 K, the material shrinks. The presence of isolated carbide inclusions also affects the physicomechanical properties (including the anitfriction properties)

Measurement of the Inclusive $b$-jet cross section in $p\\bar{p}$ collisions at CDF RunII and Development of silicon microstrip detectors for the ATLAS silicon tracker

Energy Technology Data Exchange (ETDEWEB)

D' Onofrio, Monica [Univ. of Geneva (Switzerland)

2005-01-01

In the past twenty years, the study of events with bottom quark has led to many important Tevatron results- as the discovery of the top quark- and it will be as well crucial at the LHC for the search of new physics phenomena. This analysis exploits the good tracking capabilities of the detector and relies on b-jet identification made by secondary vertex reconstruction. The study of the Inner Tracker system performance and in particular the Semi conductor Tracker (SCT), can be considered one of the fundamental issues in the construction of the apparatus. The second part of this thesis work reports some of the crucial tests performed during the development of the silicon microstrip detectors composing the SCT.

Characterisation of micro-strip and pixel silicon detectors before and after hadron irradiation

CERN Document Server

Allport, P.P

2012-01-01

The use of segmented silicon detectors for tracking and vertexing in particle physics has grown substantially since their introduction in 1980. It is now anticipated that roughly 50,000 six inch wafers of high resistivity silicon will need to be processed into sensors to be deployed in the upgraded experiments in the future high luminosity LHC (HL-LHC) at CERN. These detectors will also face an extremely severe radiation environment, varying with distance from the interaction point. The volume of required sensors is large and their delivery is required during a relatively short time, demanding a high throughput from the chosen suppliers. The current situation internationally, in this highly specialist market, means that security of supply for large orders can therefore be an issue and bringing additional potential vendors into the field can only be an advantage. Semiconductor companies that could include planar sensors suitable for particle physics in their product lines will, however, need to prove their pro...

Improvement in breakdown characteristics with multiguard structures in microstrip silicon detectors for CMS

International Nuclear Information System (INIS)

Bacchetta, N.; Bisello, D.; Candelori, A.; Rold, M. Da; Descovich, M.; Kaminski, A.; Messineo, A.; Rizzo, F.; Verzellesi, G.

2001-01-01

To obtain full charge collection the CMS silicon detectors should be able to operate at high bias voltage. We observed that multiguard structures enhance the breakdown performance of the devices on several tens of baby detectors designed for CMS. The beneficial effects of the multiguard structures still remains after the strong neutron irradiation performed to simulate the operation at the LHC

Improvement in breakdown characteristics with multiguard structures in microstrip silicon detectors for CMS

CERN Document Server

Bacchetta, N; Candelori, A; Da Rold, M; Descovich, M; Kaminski, A; Messineo, A; Rizzo, F; Verzellesi, G

2001-01-01

To obtain full charge collection the CMS silicon detectors should be able to operate at high bias voltage. We observed that multiguard structures enhance the breakdown performance of the devices on several tens of baby detectors designed for CMS. The beneficial effects of the multiguard structures still remains after the strong neutron irradiation performed to simulate the operation at the LHC. (3 refs).

Simulations for irradiation of silicon-based structures

International Nuclear Information System (INIS)

Sagatova, A.; Pavlovic, M.; Sedlackova, K.; Necas, V.; Hybler, P.; Zatko, B.

2013-01-01

The software ModePEB for modelling of electron beam processing in multilayer flat objects was shown to be a very useful tool for optimization of the irradiation of silicon based structures. Except its significant help in setting-up the accelerator parameters corresponding to a desired dose, its proven reliability and consistency with the measured data makes the ModePEB an inevitable instrument for design and optimization of electron irradiation experiments. (authors)

Proton irradiation effects of amorphous silicon solar cell for solar power satellite

Energy Technology Data Exchange (ETDEWEB)

Morita, Yousuke; Oshima, Takeshi [Japan Atomic Energy Research Inst., Takasaki, Gunma (Japan). Takasaki Radiation Chemistry Research Establishment; Sasaki, Susumu; Kuroda, Hideo; Ushirokawa, Akio

1997-03-01

Flexible amorphous silicon(fa-Si) solar cell module, a thin film type, is regarded as a realistic power generator for solar power satellite. The radiation resistance of fa-Si cells was investigated by the irradiations of 3,4 and 10 MeV protons. The hydrogen gas treatment of the irradiated fa-Si cells was also studied. The fa-Si cell shows high radiation resistance for proton irradiations, compared with a crystalline silicon solar cell. (author)

Proton irradiation effects in silicon devices

Energy Technology Data Exchange (ETDEWEB)

Simoen, E; Vanhellemont, J; Alaerts, A [IMEC, Leuven (Belgium); and others

1997-03-01

Proton irradiation effects in silicon devices are studied for components fabricated in various substrates in order to reveal possible hardening effects. The degradation of p-n junction diodes increases in first order proportionally with the fluence, when submitted to 10 MeV proton irradiations in the range 5x10{sup 9} cm{sup -2} to 5x10{sup 11} cm{sup -2}. The damage coefficients for both p- and n-type Czochralski, Float-Zone and epitaxial wafers are reported. Charge-Coupled Devices fabricated in a 1.2 {mu}m CCD-CMOS technology are shown to be quite resistant to 59 MeV H{sup +} irradiations, irrespective of the substrate type. (author)

TOSCA simulation of some effects observed in irradiated silicon detectors

International Nuclear Information System (INIS)

Moszczynski, A.S.

2001-12-01

TOSCA package has been used to simulate some effects observed recently in heavily irradiated silicon detectors. In particular, unexpected possibility of α-particle registration at p+ contact has been explained without presented elsewhere assumption that there was p-n junction of unknown origin beneath p+ layer. Performed simulations showed that assumption on relaxation-like character of irradiated silicon material is also not necessary to explain such effects like low-voltage capacitance peak in reverse bias and negative capacitance in forward bias. (author)

Amorphous silicon based particle detectors

OpenAIRE

Wyrsch, N.; Franco, A.; Riesen, Y.; Despeisse, M.; Dunand, S.; Powolny, F.; Jarron, P.; Ballif, C.

2012-01-01

Radiation hard monolithic particle sensors can be fabricated by a vertical integration of amorphous silicon particle sensors on top of CMOS readout chip. Two types of such particle sensors are presented here using either thick diodes or microchannel plates. The first type based on amorphous silicon diodes exhibits high spatial resolution due to the short lateral carrier collection. Combination of an amorphous silicon thick diode with microstrip detector geometries permits to achieve micromete...

A deep-level transient spectroscopy study of gamma-ray irradiation on the passivation properties of silicon nitride layer on silicon

Science.gov (United States)

Dong, Peng; Yu, Xuegong; Ma, Yao; Xie, Meng; Li, Yun; Huang, Chunlai; Li, Mo; Dai, Gang; Zhang, Jian

2017-08-01

Plasma-enhanced chemical vapor deposited silicon nitride (SiNx) films are extensively used as passivation material in the solar cell industry. Such SiNx passivation layers are the most sensitive part to gamma-ray irradiation in solar cells. In this work, deep-level transient spectroscopy has been applied to analyse the influence of gamma-ray irradiation on the passivation properties of SiNx layer on silicon. It is shown that the effective carrier lifetime decreases with the irradiation dose. At the same time, the interface state density is significantly increased after irradiation, and its energy distribution is broadened and shifts deeper with respect to the conduction band edge, which makes the interface states becoming more efficient recombination centers for carriers. Besides, C-V characteristics show a progressive negative shift with increasing dose, indicating the generation of effective positive charges in SiNx films. Such positive charges are beneficial for shielding holes from the n-type silicon substrates, i. e. the field-effect passivation. However, based on the reduced carrier lifetime after irradiation, it can be inferred that the irradiation induced interface defects play a dominant role over the trapped positive charges, and therefore lead to the degradation of passivation properties of SiNx on silicon.

Origin of interfacial charging in irradiated silicon nitride capacitors

International Nuclear Information System (INIS)

Hughes, R.C.

1984-01-01

Many experiments show that when metal-silicon nitride-silicon dioxide-silicon (MNOS) devices are irradiated in short circuit, a large interfacial charge builds up near the nitride-SiO 2 -Si interface. This effect cannot be explained by simple models of radiation-induced conductivity of the nitride, but it is reported here that inclusion of carrier diffusion and recombination in the photoconductivity equations can predict the observed behavior. Numerical solutions on a computer are required, however, when these complications are added. The simulations account for the magnitude and radiation dose dependence of the results, as well as the occurrence of a steady state during the irradiation. The location of the excess trapped charge near the interface is also predicted, along with the large number of new traps which must be introduced to influence the steady-state charge distribution

CBC2: A CMS microstrip readout ASIC with logic for track-trigger modules at HL-LHC

Energy Technology Data Exchange (ETDEWEB)

Hall, G., E-mail: g.hall@imperial.ac.uk [Blackett Laboratory, Imperial College, London SW7 2AZ (United Kingdom); Pesaresi, M.; Raymond, M. [Blackett Laboratory, Imperial College, London SW7 2AZ (United Kingdom); Braga, D.; Jones, L.; Murray, P.; Prydderch, M. [Rutherford Appleton Laboratory, Chilton, Didcot, Oxon OX11 OQX (United Kingdom); Abbaneo, D.; Blanchot, G.; Honma, A.; Kovacs, M.; Vasey, F. [CERN, CH-1211, Geneva (Switzerland)

2014-11-21

The CBC2 is the latest version of the CMS Binary Chip ASIC for readout of the upgraded CMS Tracker at the High Luminosity LHC. It is designed in 130 nm CMOS with 254 input channels and will be bump-bonded to a substrate to which sensors will be wire-bonded. The CBC2 is designed to instrument double layer modules, consisting of two overlaid silicon microstrip sensors with aligned microstrips, in the outer tracker. It incorporates logic to identify L1 trigger primitives in the form of “stubs”: high transverse-momentum track candidates which are identified within the low momentum background by selecting correlated hits between two closely separated microstrip sensors. The first prototype modules have been assembled. The performance of the chip in recent laboratory tests is briefly reported and the status of module construction described.

Influence of silicon on void nucleation in irradiated alloys

International Nuclear Information System (INIS)

Esmailzadeh, B.; Kumar, A.; Garner, F.A.

1984-01-01

The addition of silicon to pure nickel, Ni-Cr alloys and Fe-Ni-Cr alloys raises the diffusivity of each of the alloy components. The resultant increase in the effective vacancy diffusion coefficient causes large reductions in the nucleation rate of voids during irradiation. This extends the transient regime of swelling, which is controlled not only by the amount of silicon in solution but also by the precipitation kinetics of precipitates rich in nickel and silicon

Laboratory course on silicon sensors

CERN Document Server

Crescio, E; Roe, S; Rudge, A

2003-01-01

The laboratory course consisted of four different mini sessions, in order to give the student some hands-on experience on various aspects of silicon sensors and related integrated electronics. The four experiments were. 1. Characterisation of silicon diodes for particle detection 2. Study of noise performance of the Viking readout circuit 3. Study of the position resolution of a silicon microstrip sensor 4. Study of charge transport in silicon with a fast amplifier The data in the following were obtained during the ICFA school by the students.

Effect of UV irradiations on the structural and optical features of porous silicon: application in silicon solar cells

International Nuclear Information System (INIS)

Aouida, S.; Saadoun, M.; Boujmil, M.F.; Ben Rabha, M.; Bessaies, B.

2004-01-01

The aim of this paper is to investigate the structural and optical stability of porous silicon layers (PSLs) planned to be used in silicon solar cells technology. The PSLs were prepared by a HNO 3 /HF vapor etching (VE) based method. Fourier transform infrared (FT-IR) spectroscopy shows that fresh VE-based PSLs contain N-H and Si-F bonds related to a ammonium hexafluorosilicate (NH 4 ) 2 SiF 6 minor phase, and conventional Si-H x and Si-O x bonds. Free air exposures of PSLs without and with UV irradiation lead to oxidation or photo-oxidation of the porous layer, respectively. FT-IR characterisation of the PSLs shows that UV irradiations modify the transformation kinetics replacing instable Si-H x by Si-O x or Si-O-H bonds. When fresh PSLs undergo free air oxidation within 7 days, the surface reflectivity decreases from 10 to about 8%, while it drops to about 4% when a 10 min free air UV irradiation is applied. Long periods of free air oxidation do not ensure the reflectivity to be stable, whereas it becomes stable after only 10 min of UV irradiation. This behaviour was explained taking into account the kinetic differences between oxidation with and without UV irradiation. Fresh VE-based PSLs were found to improve efficiently the photovoltaic (PV) characteristics of crystalline silicon solar cells. The passivating action of VE-based PSLs was discussed. An improvement of the PV performances was observed solely for stable oxidized porous silicon (PS) structures obtained from UV irradiations

Chalcogen doping of silicon via intense femtosecond-laser irradiation

International Nuclear Information System (INIS)

Sheehy, Michael A.; Tull, Brian R.; Friend, Cynthia M.; Mazur, Eric

2007-01-01

We have previously shown that doping silicon with sulfur via femtosecond-laser irradiation leads to near-unity absorption of radiation from ultraviolet wavelengths to below band gap short-wave infrared wavelengths. Here, we demonstrate that doping silicon with two other group VI elements (chalcogens), selenium and tellurium, also leads to near-unity broadband absorption. A powder of the chalcogen dopant is spread on the silicon substrate and irradiated with femtosecond-laser pulses. We examine and compare the resulting morphology, optical properties, and chemical composition for each chalcogen-doped substrate before and after thermal annealing. Thermal annealing reduces the absorption of below band gap radiation by an amount that correlates with the diffusivity of the chalcogen dopant used to make the sample. We propose a mechanism for the absorption of below band gap radiation based on defects in the lattice brought about by the femtosecond-laser irradiation and the presence of a supersaturated concentration of chalcogen dopant atoms. The selenium and tellurium doped samples show particular promise for use in infrared photodetectors as they retain most of their infrared absorptance even after thermal annealing-a necessary step in many semiconductor device manufacturing processes

Irradiation and annealing of p-type silicon carbide

Energy Technology Data Exchange (ETDEWEB)

Lebedev, Alexander A.; Bogdanova, Elena V.; Grigor' eva, Maria V.; Lebedev, Sergey P. [A.F. Ioffe Physical-Technical Institute, St. Petersburg, 194021 (Russian Federation); Kozlovski, Vitaly V. [St. Petersburg State Polytechnic University, St. Petersburg, 195251 (Russian Federation)

2014-02-21

The development of the technology of semiconductor devices based on silicon carbide and the beginning of their industrial manufacture have made increasingly topical studies of the radiation hardness of this material on the one hand and of the proton irradiation to form high-receptivity regions on the other hand. This paper reports on a study of the carrier removal rate (V{sub d}) in p-6H-SiC under irradiation with 8 MeV protons and of the conductivity restoration in radiation- compensated epitaxial layers of various p-type silicon carbide polytypes. V{sub d} was determined by analysis of capacitance-voltage characteristics and from results of Hall effect measurements. It was found that the complete compensation of samples with the initial value of Na - Nd ≈ 1.5 × 10{sup 18} cm{sup −3} occurs at an irradiation dose of ∼1.1 × 10{sup 16} cm{sup −2}. It is shown that specific features of the sublimation layer SiC (compared to CVD layers) are clearly manifested upon the gamma and electron irradiation and are hardly noticeable under the proton and neutron irradiation. It was also found that the radiation-induced compensation of SiC is retained after its annealing at ≤1000°C. The conductivity is almost completely restored at T ≥ 1200°C. This character of annealing of the radiation compensation is independent of a silicon carbide polytype and the starting doping level of the epitaxial layer. The complete annealing temperatures considerably exceed the working temperatures of SiC-based devices. It is shown that the radiation compensation is a promising method in the technology of high-temperature devices based on SiC.

Simultaneous electron-proton irradiation of crucible grown and float-zone silicon solar cells

International Nuclear Information System (INIS)

Bernard, J.

1974-01-01

The realisation of an irradiation chamber which permits simultaneous irradiations by electrons, protons, photons and in-situ measurements of solar cells main parameters (diffusion length, I.V. characteristics) is described. Results obtained on 20 solar cells n/p 10Ωcm made in silicon pulled crystals and 20 solar cells n/p 10Ωcm made in silicon float-zone simultaneously irradiated with electrons and photons are given [fr

Charge Collection Efficiency Simulations of Irradiated Silicon Strip Detectors

CERN Document Server

Peltola, T.

2014-01-01

During the scheduled high luminosity upgrade of LHC, the world's largest particle physics accelerator at CERN, the position sensitive silicon detectors installed in the vertex and tracking part of the CMS experiment will face more intense radiation environment than the present system was designed for. Thus, to upgrade the tracker to required performance level, comprehensive measurements and simulations studies have already been carried out. Essential information of the performance of an irradiated silicon detector is obtained by monitoring its charge collection efficiency (CCE). From the evolution of CCE with fluence, it is possible to directly observe the effect of the radiation induced defects to the ability of the detector to collect charge carriers generated by traversing minimum ionizing particles (mip). In this paper the numerically simulated CCE and CCE loss between the strips of irradiated silicon strip detectors are presented. The simulations based on Synopsys Sentaurus TCAD framework were performed ...

Effect of 200 keV proton irradiation on the properties of methyl silicone rubber

International Nuclear Information System (INIS)

Zhang Lixin; Xu Zhou; Wei Qiang; He Shiyu

2006-01-01

The effects of 200 keV proton irradiation on methyl silicone rubber were studied. The changes in surface morphology, mechanical properties, cross-linking density, glass transition temperature, infrared attenuated total reflection spectrum and mass spectrum indicated that, at lower fluence, the proton irradiation induced cross-linking, resulting in an increase in tensile strength and hardness of the methyl silicone rubber. However, at higher proton fluence, radiation-induced degradation, which decreased the tensile strength and hardness, became dominant. A macromolecular-network destruction model for silicone rubber irradiated with protons was proposed

Threshold irradiation dose for amorphization of silicon carbide

International Nuclear Information System (INIS)

Snead, L.L.; Zinkle, S.J.

1997-01-01

The amorphization of silicon carbide due to ion and electron irradiation is reviewed with emphasis on the temperature-dependent critical dose for amorphization. The effect of ion mass and energy on the threshold dose for amorphization is summarized, showing only a weak dependence near room temperature. Results are presented for 0.56 MeV silicon ions implanted into single crystal 6H-SiC as a function of temperature and ion dose. From this, the critical dose for amorphization is found as a function of temperature at depths well separated from the implanted ion region. Results are compared with published data generated using electrons and xenon ions as the irradiating species. High resolution TEM analysis is presented for the Si ion series showing the evolution of elongated amorphous islands oriented such that their major axis is parallel to the free surface. This suggests that surface or strain effects may be influencing the apparent amorphization threshold. Finally, a model for the temperature threshold for amorphization is described using the Si ion irradiation flux and the fitted interstitial migration energy which was found to be ∼0.56eV. This model successfully explains the difference in the temperature dependent amorphization behavior of SiC irradiated with 0.56 MeV Si + at 1 x 10 -3 dpa/s and with fission neutrons irradiated at 1 x 10 -6 dpa/s irradiated to 15 dpa in the temperature range of ∼340±10K

Performance of microstrip gas chambers passivated by thin semiconducting glass and plastic films

International Nuclear Information System (INIS)

Bishai, M.R.; Gerndt, E.K.E.; Shipsey, I.P.J.; Wang, P.N.; Bagulya, A.V.; Grishin, V.M.; Negodaev, M.A.; Geltenbort, P.

1995-01-01

Patterned microstrip gas chamber substrates have been covered with ion-beam sputtered glass with electronic conductivity or a polymer which was subsequently irradiated with an ion-beam. The sputtering procedure is described in detail. The performance of several detectors is reported. (orig.)

Design,construction and commissioning of a cylinder of double-sided silicon micro-strips detectors for the Star experiment at RHIC

International Nuclear Information System (INIS)

Guedon, M.

2005-05-01

This study has been performed in the frame of quark gluon plasma physics research in the STAR experiment at RHIC. It deals with the design, the construction and the commissioning of a barrel of silicon-strip detectors (SSD). Added to the Silicon Vertex Tracker (SVT) of the STAR detector, it extends the capabilities of track reconstruction for charged particles emitted in ultra-relativistic heavy-ion collisions. It also contributes to the general study of the quark-gluon plasma production undertaken at STAR. The SSD is a cylinder of 1 m long and of 23 cm radius, and it is composed of 320 compact identical modules. Each module includes one double-sided silicon micro-strip detector, 12 readout chips ALICE 128C, 12 TAB ribbons, 2 COSTAR control chips and 2 hybrids supporting all the components. The document explains why the SSD is an important and relevant element, and justifies the technological choices as well as their validation by in-beam characterization. All component functionalities, characteristics and test procedures are presented. The data and test results are stored in a database for tracing purpose. Component and module production is described. Two parallel studies have been performed, analysed and described. One on the temperature dependence of the module performances and the other one on the optimal adjustments of the analogue blocks inside the ALICE 128C chip. The SSD installation on the RHIC site as well as the commissioning are presented together with the first data takings. (author)

Effect of Ion Beam Irradiation on Silicon Carbide with Different Microstructures

International Nuclear Information System (INIS)

Park, Kyeong Hwan; Park, Ji Yeon; Kim, Weon Ju; Jung, Choong Hwan; Ryu, Woo Seog

2006-01-01

SiC and SiC/SiC composites are one of promising candidates for structural materials of the next generation energy systems such as the gas-cooled reactors and fusion reactors. This anticipation yields many material issues, and radiation effects of silicon carbide are recognized as an important research subject. Silicon carbide has diverse crystal structures (called polytypes), such as α-SiC (hexagonal structure), β-SiC (cubic structure) and amorphous SiC. Among these polytypes, β-SiC has been studied as matrix material in SiC/SiC composites. Near-stoichiometric β-SiC with high crystallinity and purity is considered as suitable material in the next generation energy system and matrix material in SiC/SiC composites because of its excellent radiation resistance. Highly pure and crystalline β-SiC and SiC/SiC composites could be obtained by the chemical vapor deposition (CVD) and Infiltration (CVI) process using a gas mixture of methyltrichlorosilane (CH 3 SiCl 3 , MTS) and purified H 2 . SiC produced by the CVD method has different grain size and microstructural morphology depended on the process conditions such as temperature, pressure and the input gas ratio. In this work, irradiation effects of silicon carbide were investigated using ion beam irradiation with emphasis on the influence of grain size and grain boundary. MeV ion irradiation at low temperature makes amorphous phase in silicon carbide. The microstructures and mechanical property changes of silicon carbide with different structures were analyzed after ion beam irradiation

Study on Silicon detectors

International Nuclear Information System (INIS)

Gervino, G.; Boero, M.; Manfredotti, C.; Icardi, M.; Gabutti, A.; Bagnolatti, E.; Monticone, E.

1990-01-01

Prototypes of Silicon microstrip detectors and Silicon large area detectors (3x2 cm 2 ), realized directly by our group, either by ion implantation or by diffusion are presented. The physical detector characteristics and their performances determined by exposing them to different radioactive sources and the results of extensive tests on passivation, where new technological ways have been investigated, are discussed. The calculation of the different terms contributing to the total dark current is reported

Experience with the silicon strip detector of ALICE

NARCIS (Netherlands)

Nooren, G.J.L.

2009-01-01

The Silicon Strip Detector (SSD) forms the two outermost layers of the ALICE Inner Track- ing System (ITS), connecting the TPC with the inner layers of the ITS. The SSD consists of 1698 double-sided silicon microstrip modules, 95 μm pitch, distributed in two cylindrical bar- rels, whose radii are

Characterization of silicon microstrip sensors, front-end electronics, and prototype tracking detectors for the CBM experiment at FAIR

International Nuclear Information System (INIS)

Sorokin, Iurii

2013-01-01

The Compressed Baryonic Matter (CBM) experiment will explore the phase diagram of strongly interacting matter in the region of high net baryonic densities. The matter at the extreme conditions will be studied in collisions of a heavy ion beam with a fixed heavy element target. The present work is devoted to the development of the main component of the CBM experiment - the Silicon Tracking System (STS). The STS has to enable reconstruction of up to 1000 charged particle tracks per nucleus-nucleus interaction at the rate of up to 10 MHz, provide a momentum resolution Δp/p of 1 %, and withstand the radiation load of up to 10 14 n eq /cm 2 (n eq -neutron equivalent). The STS will be based on double-sided silicon microstrip sensors, that will be arranged in 8 planes in the aperture of the dipole magnet. Selftriggering readout electronics will be located on the periphery of the detecting planes, and connected to the sensors with low mass microcables. In the stage of R and D, as well as in the stages of pre-series and series production, characterization of the sensors, of the front-end electronics, and of the complete detector modules has to be performed. In the present work the required techniques were developed, and the performance of the latest detector prototypes was evaluated. A particular attention is paid to evaluation of the signal amplitude, as it is one of the most important detector characteristics. Techniques for measuring the passive electrical characteristics of the sensors were developed. These include: the coupling and the interstrip capacitances, the interstrip resistance, the bias resistance, the strip leakage current, the bulk capacitance, and the bulk leakage current. The techniques will be applied for the quality assurance of the sensors during the pre-series and the series production. Extensive characterization of the prototype readout chip, n-XYTER, was performed. The register settings were optimized, and the dependence of the amplitude response on

Acousto-defect interaction in irradiated and non-irradiated silicon n+-p structures

Science.gov (United States)

Olikh, O. Ya.; Gorb, A. M.; Chupryna, R. G.; Pristay-Fenenkov, O. V.

2018-04-01

The influence of ultrasound on current-voltage characteristics of non-irradiated silicon n+-p structures as well as silicon structures exposed to reactor neutrons or 60Co gamma radiation has been investigated experimentally. It has been found that the ultrasound loading of the n+-p structure leads to the reversible change of shunt resistance, carrier lifetime, and ideality factor. Specifically, considerable acoustically induced alteration of the ideality factor and the space charge region lifetime was observed in the irradiated samples. The experimental results were described by using the models of coupled defect level recombination, Shockley-Read-Hall recombination, and dislocation-induced impedance. The experimentally observed phenomena are associated with the increase in the distance between coupled defects as well as the extension of the carrier capture coefficient of complex point defects and dislocations. It has been shown that divacancies and vacancy-interstitial oxygen pairs are effectively modified by ultrasound in contrast to interstitial carbon-interstitial oxygen complexes.

Characterization of silicon micro-strip sensors with a pulsed infra-red laser system for the CBM experiment at FAIR

International Nuclear Information System (INIS)

Ghosh, P.

2015-01-01

The Compressed Baryonic Matter (CBM) experiment at FAIR is composed of 8 tracking stations consisting of 1292 double sided silicon micro-strip sensors. For the quality assurance of produced prototype sensors a laser test system (LTS) has been developed. The aim of the LTS is to scan sensors with a pulsed infra-red laser driven by step motor to determine the charge sharing in-between strips and to measure qualitative uniformity of the sensor response over the whole active area. The prototype sensors which are tested with the LTS so far have 256 strips with a pitch of 50 μm on each side. They are read-out using a self-triggering prototype read-out electronic ASIC called n-XYTER. The LTS is designed to measure sensor response in an automatized procedure at several thousand positions across the sensor with focused infra-red laser light (spot size ≈ 12 μm , wavelength = 1060 nm). The pulse with duration (≈ 10 ns) and power (≈ 5 mW) of the laser pulses is selected such, that the absorption of the laser light in the 300 μm thick silicon sensors produces a number of about 24000 electrons, which is similar to the charge created by minimum ionizing particles (MIP) in these sensors. Laser scans different prototype sensors is reported

Foundations for microstrip circuit design

CERN Document Server

Edwards, Terry

2016-01-01

Building on the success of the previous three editions, Foundations for Microstrip Circuit Design offers extensive new, updated and revised material based upon the latest research. Strongly design-oriented, this fourth edition provides the reader with a fundamental understanding of this fast expanding field making it a definitive source for professional engineers and researchers and an indispensable reference for senior students in electronic engineering. Topics new to this edition: microwave substrates, multilayer transmission line structures, modern EM tools and techniques, microstrip and planar transmision line design, transmission line theory, substrates for planar transmission lines, Vias, wirebonds, 3D integrated interposer structures, computer-aided design, microstrip and power-dependent effects, circuit models, microwave network analysis, microstrip passive elements, and slotline design fundamentals.

Silicon/HfO2 interface: Effects of proton irradiation

International Nuclear Information System (INIS)

Maurya, Savita; Radhakrishna, M.

2015-01-01

Substrate oxide interfaces are of paramount importance in deciding the quality of the semiconductor devices. In this work we have studied how 200 keV proton irradiation affects the interface of a 13 nm thick, atomic layer deposited hafnium dioxide on silicon substrate. Pre- and post-irradiation electrical measurements are used to quantify the effect of proton irradiation for varying electrode geometries. Proton irradiation introduces positive charge in the oxide and at the interface of Si/HfO 2 interface. The gate current is not very much affected under positive injection since the induced positive charge is compensated by the injected electrons. Current voltage characteristics under negative bias get affected by the proton irradiation

Structure and mechanical properties of the irradiated silicon

International Nuclear Information System (INIS)

Kalanov, M.U.; Khamraeva, R.N.; Ummatov, Kh.D.; Khajdarov, T.Kh.; Rustamova, V.M.

2001-01-01

In this work the results of study for radiation influence on phase content and mechanical properties of mono- and polycrystalline silicon are presented. Samples were irradiated at room temperature for 10 hours by X-quanta with mean energy 35 keV. Structural measurements were carried out on the DRON-UM1 with CuK α =1.542 Angstrom. Crystal internal friction was measurement by the ultrasonic resonance method at frequency 39 k Hz. Structure examinations show the impurity phase presence in the crystalline quartz form in the initial silicon mono- and polycrystals

Development and Evaluation of a Test System for the Quality Assurance during the Mass Production of Silicon Microstrip Detector Modules for the CMS Experiment

CERN Document Server

Franke, Torsten

2005-01-01

The Compact Muon Solenoid (CMS) is one of four large-scale experiments that is going to be installed at the Large Hadron Collider (LHC) at the European Laboratory for Particle Physics (CERN). For CMS an inner tracking system entirely equipped with silicon microstrip detectors was chosen. With an active area of about 198 m2 it will be the largest tracking device of the world that was ever constructed using silicon sensors. The basic components in the construction of the tracking system are approximately 16,000 so-called modules, which are pre-assembled units consisting of the sensors, the readout electronics and a support structure. The module production is carried out by a cooperation of number of institutes and industrial companies. To ensure the operation of the modules within the harsh radiation environment extensive tests have to be performed on all components. An important contribution to the quality assurance of the modules is made by a test system of which all components were developed in Aachen. In ad...

Silicon microstrip detectors with SVX chip readout

International Nuclear Information System (INIS)

Brueckner, W.; Dropmann, F.; Godbersen, M.; Konorov, I.; Koenigsmann, K.; Masciocchi, S.; Newsom, C.; Paul, S.; Povh, B.; Russ, J.S.; Timm, S.; Vorwalter, K.; Werding, R.

1995-01-01

A new silicon strip detector has been designed for the fixed target experiment WA89 at CERN. The system of about 30 000 channels is equipped with SVX chips and read out via a double buffer into a FASTBUS memory. The detector provides a fast readout by offering zero-suppressed data extraction on the chip. The silicon counters are the largest detectors built on a monocrystal so far in order to achieve good transversal acceptance. Construction and performance during the 1993 data taking run are discussed. ((orig.))

Nano-Welding of Multi-Walled Carbon Nanotubes on Silicon and Silica Surface by Laser Irradiation

Directory of Open Access Journals (Sweden)

Yanping Yuan

2016-02-01

Full Text Available In this study, a continuous fiber laser (1064 nm wavelength, 30 W/cm2 is used to irradiate multi-walled carbon nanotubes (MWCNTs on different substrate surfaces. Effects of substrates on nano-welding of MWCNTs are investigated by scanning electron microscope (SEM. For MWCNTs on silica, after 3 s irradiation, nanoscale welding with good quality can be achieved due to breaking C–C bonds and formation of new graphene layers. While welding junctions can be formed until 10 s for the MWCNTs on silicon, the difference of irradiation time to achieve welding is attributed to the difference of thermal conductivity for silica and silicon. As the irradiation time is prolonged up to 12.5 s, most of the MWCNTs are welded to a silicon substrate, which leads to their frameworks of tube walls on the silicon surface. This is because the accumulation of absorbed energy makes the temperature rise. Then chemical reactions among silicon, carbon and nitrogen occur. New chemical bonds of Si–N and Si–C achieve the welding between the MWCNTs and silicon. Vibration modes of Si3N4 appear at peaks of 363 cm−1 and 663 cm−1. There are vibration modes of SiC at peaks of 618 cm−1, 779 cm−1 and 973 cm−1. The experimental observation proves chemical reactions and the formation of Si3N4 and SiC by laser irradiation.

Nano-Welding of Multi-Walled Carbon Nanotubes on Silicon and Silica Surface by Laser Irradiation

Science.gov (United States)

Yuan, Yanping; Chen, Jimin

2016-01-01

In this study, a continuous fiber laser (1064 nm wavelength, 30 W/cm2) is used to irradiate multi-walled carbon nanotubes (MWCNTs) on different substrate surfaces. Effects of substrates on nano-welding of MWCNTs are investigated by scanning electron microscope (SEM). For MWCNTs on silica, after 3 s irradiation, nanoscale welding with good quality can be achieved due to breaking C–C bonds and formation of new graphene layers. While welding junctions can be formed until 10 s for the MWCNTs on silicon, the difference of irradiation time to achieve welding is attributed to the difference of thermal conductivity for silica and silicon. As the irradiation time is prolonged up to 12.5 s, most of the MWCNTs are welded to a silicon substrate, which leads to their frameworks of tube walls on the silicon surface. This is because the accumulation of absorbed energy makes the temperature rise. Then chemical reactions among silicon, carbon and nitrogen occur. New chemical bonds of Si–N and Si–C achieve the welding between the MWCNTs and silicon. Vibration modes of Si3N4 appear at peaks of 363 cm−1 and 663 cm−1. There are vibration modes of SiC at peaks of 618 cm−1, 779 cm−1 and 973 cm−1. The experimental observation proves chemical reactions and the formation of Si3N4 and SiC by laser irradiation. PMID:28344293

Photoluminescence in large fluence radiation irradiated space silicon solar cells

Energy Technology Data Exchange (ETDEWEB)

Hisamatsu, Tadashi; Kawasaki, Osamu; Matsuda, Sumio [National Space Development Agency of Japan, Tsukuba, Ibaraki (Japan). Tsukuba Space Center; Tsukamoto, Kazuyoshi

1997-03-01

Photoluminescence spectroscopy measurements were carried out for silicon 50{mu}m BSFR space solar cells irradiated with 1MeV electrons with a fluence exceeding 1 x 10{sup 16} e/cm{sup 2} and 10MeV protons with a fluence exceeding 1 x 10{sup 13} p/cm{sup 2}. The results were compared with the previous result performed in a relative low fluence region, and the radiation-induced defects which cause anomalous degradation of the cell performance in such large fluence regions were discussed. As far as we know, this is the first report which presents the PL measurement results at 4.2K of the large fluence radiation irradiated silicon solar cells. (author)

Quantitative analysis of complexes in electron irradiated CZ silicon

International Nuclear Information System (INIS)

Inoue, N.; Ohyama, H.; Goto, Y.; Sugiyama, T.

2007-01-01

Complexes in helium or electron irradiated silicon are quantitatively analyzed by highly sensitive and accurate infrared (IR) absorption spectroscopy. Carbon concentration (1x10 15 -1x10 17 cm -3 ) and helium dose (5x10 12 -5x10 13 cm -2 ) or electron dose (1x10 15 -1x10 17 cm -2 ) are changed by two orders of magnitude in relatively low regime compared to the previous works. It is demonstrated that the carbon-related complex in low carbon concentration silicon of commercial grade with low electron dose can be detected clearly. Concentration of these complexes is estimated. It is clarified that the complex configuration and thermal behavior in low carbon and low dose samples is simple and almost confined within the individual complex family compared to those in high concentration and high dose samples. Well-established complex behavior in electron-irradiated sample is compared to that in He-irradiated samples, obtained by deep level transient spectroscopy (DLTS) or cathodoluminescence (CL), which had close relation to the Si power device performance

Performance of a beam telescope using double sided silicon microstrip detectors

International Nuclear Information System (INIS)

Fischer, P.; Menke, S.; Wermes, N.

1995-04-01

A beam telescope consisting of four double sided, DC coupled microstrip detectors with VLSI readout electronics has been built and tested in a 70 GeV μ - beam at CERN. A signal to noise ratio of 53:1 and a spatial resolution of 2.7 μm (junction side) and 4.8 μm (ohmic side) have been observed on the best detectors. A telescope performance for a particle track of σ xy =2-3 μm and σ slope =2-3 μrad on the front face of a test object was achieved. (orig.)

Transmission electron microscope study of neutron irradiation-induced defects in silicon

International Nuclear Information System (INIS)

Oshima, Ryuichiro; Kawano, Tetsuya; Fujimoto, Ryoji

1994-01-01

Commercial Czochralski-grown silicon (Cz-Si) and float-zone silicon (Fz-Si) wafers were irradiated with fission neutrons at various fluences from 10 19 to 10 22 n/cm 2 at temperatures ranging from 473 K to 1043 K. The irradiation induced defect structures were examined by transmission electron microscopy and ultra high voltage electron microscopy, which were compared with Marlowe code computer simulation results. It was concluded that the vacancy-type damage structure formed at 473 K were initiated from collapse of vacancy-rich regions of cascades, while interstitial type defect clusters formed by irradiation above 673 K were associated with interstitial oxygen atoms and free interstitials which diffused out of the cascades. Complex defect structures were identified to consist of {113} and {111} planar faults by the parallel beam illumination diffraction analysis. (author)

Microstrip silicon detectors in a bent crystal based collimation system: The UA9 experiment

International Nuclear Information System (INIS)

Bolognini, D.

2010-01-01

In a hadron accelerator like Lhc, a collimation system needs to be developed to protect the accelerator itself from the beam loss damage, increasing the beam luminosity. At present, a classical robust multi-stage collimation system (based on amorphous jaws) allows to protect Lhc, but limits the luminosity to the 40% of the nominal value. In order to solve this problem, a series of low-impedance collimation systems is being developed for the second Lhc collimation phase: among these, a key role could be played by bent crystals. In a bent crystal, in fact, charged particles can be deviated in a given direction with a high efficiency, reducing the impedance and increasing the luminosity. After the satisfactory results on extracted beams, it was decided to test bent crystals on a circular accelerator (the Super Proton Synchrotron Sps at CERN): the UA9 experiment was born. In order to qualify the crystal behavior, a tracking system has been developed: the system is based on microstrip silicon detectors readout by self-triggering ASICs with a spatial resolution of the order of 5 μm; the system, completely remotely controlled and based on the optical fiber transmission, would be able to measure the beam halo phase space x - x 1 . This paper, after a brief introduction of the UA9 experiment, will describe the tracking system and the first results obtained in the commissioning phase and data takings with a detector prototype.

Fabrication of porous silicon based tunable distributed Bragg reflectors by anodic etching of irradiated silicon

International Nuclear Information System (INIS)

Vendamani, V.S.; Dang, Z.Y.; Ramana, P.; Pathak, A.P.; Ravi Kanth Kumar, V.V.; Breese, M.B.H.; Nageswara Rao, S.V.S.

2015-01-01

Highlights: • Fabrication of tunable distributed Bragg reflectors (DBRs) by gamma/ion irradiation of Si and subsequent formation of porous silicon multilayers has been described. • The central wavelength and the width of the stop band are found to decrease with increase in irradiation fluence. • The Si samples irradiated with highest fluence of 2 × 10 13 ions/cm 2 (100 MeV Ag ions) and 60 kGy (gamma) showed a central reflection at λ = 476 nm and 544 nm respectively, in contrast to un-irradiated sample, where λ = 635 nm. • The observed changes in the central wavelengths are attributed to the density of defects generated by gamma and ion irradiation in c-Si. • This study is expected to provide useful information for fabricating tunable wave reflectors for optical communication and other device applications. - Abstract: We report a study on the fabrication of tunable distributed Bragg reflectors (DBRs) by gamma/ion irradiation of Si and subsequent formation of porous silicon multilayers. Porous Si multilayers with 50 bilayers were designed to achieve high intensity of reflection. The reflection spectra appear to have a broad continuous band between 400 and 800 nm with a distinct central wavelength corresponding to different wave reflectors. The central wavelength and the width of the stop band are found to decrease with increase in irradiation fluence. The Si samples irradiated with highest fluence of 2 × 10 13 ions/cm 2 (100 MeV Ag ions) and 60 kGy (gamma) showed a central reflection at λ = 476 nm and 544 nm respectively, in contrast to un-irradiated sample, where λ = 635 nm. The observed changes are attributed to the density of defects generated by gamma and ion irradiation in c-Si. These results suggest that the gamma irradiation is a convenient and alternative method to tune the central wavelength of reflection without creating high density of defects by high energy ion implantation. This study is expected to provide useful information for

Neutron irradiation effects on silicon detectors structure, electrical and mechanical characteristics

International Nuclear Information System (INIS)

Rabinovich, E.; Golan, G.; Axelevich, A.; Inberg, A.; Oksman, M.; Rosenwaks, I.; Lubarsky, G.; Seidman, A.; Croitoru, N.; Rancoita, P.G.; Rattaggi, M.

1999-01-01

Neutron irradiation effects on (p-n) and Schottky-junction silicon detectors were studied. It was shown that neutron interactions with monocrystalline silicon create specific types of microstructure defects with morphology differing according to the level of neutron fluences (Φ). The isolated dislocation loops, formed by interstitial atoms were observed in microstructure images for 10 10 ≤ Φ ≤ 10 12 n/cm 2 . A strong change in the dislocation loops density and a cluster formation was observed for Φ ≥ 10 13 n/cm 2 . A drastic silicon damage was found for fluences over 10 14 n/cm 2 . These fluences created zones enriched with all types of dislocations, covering more than 50 % of the total surface area. A mechanical fragility appeared in that fluence range in a form of microcracks. 10 14 n/cm 2 appears to be a critical value of neutron irradiation because of the radiation damage described above and because the characteristics I f -V f of silicon detectors can be differentiated from those obtained at low fluences. (A.C.)

Hyperon production in proton-nucleus collisions at a center-of-mass energy of √(sNN) = 41.6 GeV at HERA-B and design of silicon microstrip detectors for tracking at LHCb

International Nuclear Information System (INIS)

Agari, Michaela

2006-01-01

The topics of this thesis are the measurements of hyperon production in protonnucleus collisions at √(s)=41.6 GeV with the Hera-B detector located at DESY, Hamburg (Germany), and the design of silicon microstrip sensors for the LHCb experiment at CERN, Geneva (Switzerland). Λ, Ξ and Ω hyperons and their antiparticles were reconstructed from 113.5 . 10 6 inelastic collisions of protons with fixed carbon, titanium and tungsten targets. With these samples, antiparticle-to-particle ratios, cross sections integrated for the accessible kinematic region of Hera-B and single differential cross sections as function of transverse momentum, dσ/dp T 2 (for Λ and Ξ) and rapidity, dσ/dy (for Λ only), have been been measured as well as the dependence of these quantities on the atomic number of the target nucleus, as parameterized using the Glauber model. The obtained ratios follow the same trend as found for the energy dependence of measurements from nucleus-nucleus collisions. Silicon microstrip sensors have been designed for the tracking system of the LHCb detector. Evaluating the performance in beam tests at CERN, the strip geometry and sensor thickness were varied optimizing for a large signal-to-noise ratio, a small number of read-out channels and a low occupancy. The detector is currently being built to be operational for first proton-proton collisions in autumn 2007. (orig.)

A New Understanding of Near-Threshold Damage for 200 keV Irradiation In Silicon

International Nuclear Information System (INIS)

Stoddard, Nathan; Duscher, Gerd J.M.; Windl, Wolfgang; Rozgonyi, G.A.

2005-01-01

Recently we reported room temperature point defect creation and subsequent extended defect nucleation in nitrogen-doped silicon during 200 kV electron irradiation, while identical irradiation of nitrogen-free silicon produced no effect. In this paper, first principles calculations are combined with new transmission electron microscope (TEM) observations to support a new model for elastic electron-silicon interactions in the TEM, which encompasses both nitrogen doped and nitrogen free silicon. Specifically, the nudged elastic band method was used to study the energetics along the diffusion path during an electron collision event in the vicinity of a nitrogen pair. It was found that the 0 K estimate for the energy barrier of a knock-on event is lowered from ∼12 to 6.2 eV. However, this is still inadequate to explain the observations. We therefore propose an increase in the energy barrier for Frenkel pair recombination associated with N 2 -V bonding. Concerning pure silicon, stacking fault formation near irradiation-induced holes demonstrates the participation of bulk processes. In low oxygen float zone material, 2--5 nm voids were formed, while oxygen precipitation in Czochralski Si has been verified by electron energy-loss spectroscopy. Models of irradiation-induced point defect aggregation are presented and it is concluded that these must be bulk and not surface mediated phenomena.

CMS silicon tracker developments

International Nuclear Information System (INIS)

Civinini, C.; Albergo, S.; Angarano, M.; Azzi, P.; Babucci, E.; Bacchetta, N.; Bader, A.; Bagliesi, G.; Basti, A.; Biggeri, U.; Bilei, G.M.; Bisello, D.; Boemi, D.; Bosi, F.; Borrello, L.; Bozzi, C.; Braibant, S.; Breuker, H.; Bruzzi, M.; Buffini, A.; Busoni, S.; Candelori, A.; Caner, A.; Castaldi, R.; Castro, A.; Catacchini, E.; Checcucci, B.; Ciampolini, P.; Creanza, D.; D'Alessandro, R.; Da Rold, M.; Demaria, N.; De Palma, M.; Dell'Orso, R.; Della Marina, R.D.R.; Dutta, S.; Eklund, C.; Feld, L.; Fiore, L.; Focardi, E.; French, M.; Freudenreich, K.; Frey, A.; Fuertjes, A.; Giassi, A.; Giorgi, M.; Giraldo, A.; Glessing, B.; Gu, W.H.; Hall, G.; Hammarstrom, R.; Hebbeker, T.; Honma, A.; Hrubec, J.; Huhtinen, M.; Kaminsky, A.; Karimaki, V.; Koenig, St.; Krammer, M.; Lariccia, P.; Lenzi, M.; Loreti, M.; Luebelsmeyer, K.; Lustermann, W.; Maettig, P.; Maggi, G.; Mannelli, M.; Mantovani, G.; Marchioro, A.; Mariotti, C.; Martignon, G.; Evoy, B. Mc; Meschini, M.; Messineo, A.; Migliore, E.; My, S.; Paccagnella, A.; Palla, F.; Pandoulas, D.; Papi, A.; Parrini, G.; Passeri, D.; Pieri, M.; Piperov, S.; Potenza, R.; Radicci, V.; Raffaelli, F.; Raymond, M.; Santocchia, A.; Schmitt, B.; Selvaggi, G.; Servoli, L.; Sguazzoni, G.; Siedling, R.; Silvestris, L.; Starodumov, A.; Stavitski, I.; Stefanini, G.; Surrow, B.; Tempesta, P.; Tonelli, G.; Tricomi, A.; Tuuva, T.; Vannini, C.; Verdini, P.G.; Viertel, G.; Xie, Z.; Yahong, Li; Watts, S.; Wittmer, B.

2002-01-01

The CMS Silicon tracker consists of 70 m 2 of microstrip sensors which design will be finalized at the end of 1999 on the basis of systematic studies of device characteristics as function of the most important parameters. A fundamental constraint comes from the fact that the detector has to be operated in a very hostile radiation environment with full efficiency. We present an overview of the current results and prospects for converging on a final set of parameters for the silicon tracker sensors

Charge transport in non-irradiated and irradiated silicon detectors

International Nuclear Information System (INIS)

Leroy, C.; Roy, P.; Casse, G.L.; Glaser, M.; Grigoriev, E.; Lemeilleur, F.

1999-01-01

A model describing the transport of the charge carriers generated in n-type silicon detectors by ionizing particles is presented. In order to reproduce the experimental current pulse responses induced by α and β particles in non-irradiated and irradiated detectors up to fluences (PHI) much beyond the n to p-type inversion, an n-type region 15 μm deep is introduced on the p + side of the diode. This model also gives mobilities which decrease linearly up to fluences of around 5x10 13 particles/cm 2 and beyond, converging to saturation values of about 1000 and 450 cm 2 /V s for electrons and holes, respectively. The charge carrier lifetime degradation with increased fluence, due to trapping, is responsible for a predicted charge collection deficit for β particles and for α particles which is found to agree with direct CCE measurements. (author)

On the influence of extrinsic point defects on irradiation-induced point-defect distributions in silicon

International Nuclear Information System (INIS)

Vanhellemont, J.; Romano-Rodriguez, A.

1994-01-01

A semi-quantitative model describing the influence of interfaces and stress fields on {113}-defect generation in silicon during 1-MeV electron irradiation, is further developed to take into account also the role of extrinsic point defects. It is shown that the observed distribution of {113}-defects in high-flux electron-irradiated silicon and its dependence on irradiation temperature and dopant concentration can be understood by taking into account not only the influence of the surfaces and interfaces as sinks for intrinsic point defects but also the thermal stability of the bulk sinks for intrinsic point defects. In heavily doped silicon the bulk sinks are related with pairing reactions of the dopant atoms with the generated intrinsic point defects or related with enhanced recombination of vacancies and self-interstitials at extrinsic point defects. The obtained theoretical results are correlated with published experimental data on boron-and phosphorus-doped silicon and are illustrated with observations obtained by irradiating cross-section transmission electron microscopy samples of wafer with highly doped surface layers. (orig.)

Stored energy in irradiated silicon carbide

Energy Technology Data Exchange (ETDEWEB)

Snead, L.L.; Burchell, T.D. [Oak Ridge National Lab., TN (United States)

1997-04-01

This report presents a short review of the phenomenon of Wigner stored energy release from irradiated graphite and discusses it in relation to neutron irradiation of silicon carbide. A single published work in the area of stored energy release in SiC is reviewed and the results are discussed. It appears from this previous work that because the combination of the comparatively high specific heat of SiC and distribution in activation energies for recombining defects, the stored energy release of SiC should only be a problem at temperatures lower than those considered for fusion devices. The conclusion of this preliminary review is that the stored energy release in SiC will not be sufficient to cause catastrophic heating in fusion reactor components, though further study would be desirable.

Irradiation of electron with high energy induced micro-crystallization of amorphous silicon

International Nuclear Information System (INIS)

Zhong Yule; Huang Junkai; Liu Weiping; Li Jingna

2001-01-01

Amorphous silicon is amorphous alloy of Si-H. It is random network of silicon with some hydrogen. And its structure has many unstable bonds as weak bonds of Si-Si and distortion bonds of all kinds. The bonds was broken or was out of shape by light and electrical ageing. It induced increase of defective state that causes character of material going to bad. This drawback will be overcome after micro-crystallization of amorphous silicon. It was discovered that a-Si:H was micro-crystallized by irradiated of electrons with energy of 0.3-0.5 MeV, density of electronic beam of 1.3 x 10 19 cm -1 s -1 and irradiated time of 10-600 s. Size of grain is 10-20 nm. Thick of microcrystalline lager is 25-250 nm

Silicon Strip detectors for the ATLAS End-Cap Tracker at the HL-LHC

CERN Document Server

AUTHOR|(INSPIRE)INSPIRE-00232570

Inside physics programme of the LHC different experiment upgrades are foreseen. After the phase-II upgrade of the ATLAS detector the luminosity will be increased up to 5-7.5x10E34 cm-2s-1. This will mean a considerable increase in the radiation levels, above 10E16 neq/cm2 in the inner regions. This thesis is focused on the development of silicon microstrip detectors enough radiation hard to cope with the particle fluence expected at the ATLAS detector during HL-LHC experiment. In particular on the electrical characterization of silicon sensors for the ATLAS End-Caps. Different mechanical and thermal tests are shown using a Petal core as well as the electrical characterization of the silicon sensors that will be used with the Petal structure. Charge collection efficiency studies are carried out on sensors with different irradiation fluences using the ALiBaVa system and two kinds of strips connection are also analized (DC and AC ganging) with a laser system. The Petalet project is presented and the electrical c...

The LHCb Silicon Tracker, first operational results

CERN Document Server

Esperante, D; Adeva, B; Gallas, A; Pérez Trigo, E; Rodríguez Pérez, P; Pazos Álvarez, A; Saborido, J; Vàzquez, P; Bay, A; Bettler, M O; Blanc, F; Bressieux, J; Conti, G; Dupertuis, F; Fave, V; Frei, R; Gauvin, N; Haefeli, G; Keune, A; Luisier, J; Muresan, R; Nakada, T; Needham, M; Nicolas, L; Knecht, M; Potterat, C; Schneider, O; Tran, M; Aquines Gutierrez, O; Bauer, C; Britsch, M; Hofmann, W; Maciuc, F; Schmelling, M; Voss, H; Anderson, J; Buechler, A; Bursche, A; Chiapolini, N; de Cian, M; Elsaesser, C; Hangartner, V; Salzmann, C; Steiner, S; Steinkamp, O; Straumann, U; van Tilburg, J; Tobin, M; Vollhardt, A; Iakovenko, V; Okhrimenko, O; Pugatch, V

2010-01-01

The Large Hadron Collider beauty (LHCb) experiment at CERN (Conseil Européen pour la Recherche Nucléaire) is designed to perform precision measurements of b quark decays. The LHCb Silicon Tracker consists of two sub-detectors, the Tracker Turicensis and the Inner Tracker, which are built from silicon micro-strip technology. First performance results of both detectors using data from Large Hadron Collider synchronization tests are presented.

Defect characterization in high-purity silicon after γ- and hadron irradiation

International Nuclear Information System (INIS)

Stahl, J.

2004-07-01

The challenge for silicon particle detectors in future high energy physics experiments caused by extreme radiation fields can only be met by an appropriate defect engineering of the starting material. Appreciable improvements had already been obtained by enriching high resistivity float zone silicon with oxygen as demonstrated by the CERN RD48 collaboration. This thesis will focus on the difference observed after irradiation between standard and oxygenated float zone and detector grade Czochralski silicon. Results obtained with diodes manufactured on epitaxial layers are also included, envisioning effects arising from the possible migration of impurities during the crystal growth from the oxygen rich Czochralski substrate. Deep level transient spectroscopy (DLTS) and thermally stimulated current (TSC) measurements have been performed for defect characterization after γ- and hadron irradiation. Also a new high resolution DLTS technique has been used for the first time to separate defect levels with similar parameters. During the microscopic studies additionally to the well known defects like VO i , V 2 , C i O i or VP, four new radiation induced defects have been discovered and characterized. Two of these defects are closely correlated with the detector performance: A deep acceptor labeled as I-defect, and a bistable donor (BD). The formation of the I-defect is strongly suppressed in oxygen rich materials, while the formation of the BD is suppressed in oxygen lean material. With their properties the I- and the BD-defect are able to explain the different macroscopic behavior of standard and oxygen enriched float zone silicon after γ-irradiation. Furthermore, the BD defect is most probably responsible for the observation that in Cz and Epi diodes space charge sign inversion does not occur even after high fluences of proton irradiation. Additionally the γ-irradiated diodes were annealed at temperatures between 100 C and 350 C. During these studies some new reaction

Doping of monocrystalline silicon with phosphorus by means of neutron irradiation at the IEA-R1 research reactor

International Nuclear Information System (INIS)

Carbonari, A.W.; Puget, M.A.C.

1990-11-01

The first neutron irradiation experiments with monocrystal silicon in the IEA-R1 research reactor of IPEN are related. The silicon is irradiated with phosphorus producing a N type semiconductor with a very small resistivity variation throughout the crystal volume. The neutrons induce nuclear reactions in Si-30 isotope and these atoms are then transformed in to phosphorous atoms. This process is known as Neutron Transmutation Doping. In order to irradiate the silicon crystals in the reactor, a specific device has been constructed, and it permits the irradiation of up to 2.5'' diameter monocrystals. (author)

Design and characterization of integrated front-end transistors in a micro-strip detector technology

International Nuclear Information System (INIS)

Simi, G.; Angelini, C.; Batignani, G.; Bettarini, S.; Bondioli, M.; Boscardin, M.; Bosisio, L.; Dalla Betta, G.-F.; Dittongo, S.; Forti, F.; Giorgi, M.; Gregori, P.; Manghisoni, M.; Morganti, M.; U. Pignatel, G.; Ratti, L.; Re, V.; Rizzo, G.; Speziali, V.; Zorzi, N.

2002-01-01

We present the developments in a research program aimed at the realization of silicon micro-strip detectors with front-end electronics integrated in a high resistivity substrate to be used in high-energy physics, space and medical/industrial imaging applications. We report on the fabrication process developed at IRST (Trento, Italy), the characterization of the basic wafer parameters and measurements of the relevant working characteristics of the integrated transistors and related test structures

Radiation damage in silicon. Defect analysis and detector properties

Energy Technology Data Exchange (ETDEWEB)

Hoenniger, F.

2008-01-15

Silicon microstrip and pixel detectors are vital sensor-components as particle tracking detectors for present as well as future high-energy physics (HEP) experiments. All experiments at the large Hadron Collider (LHC) are equipped with such detectors. Also for experiments after the upgrade of the LHC (the so-called Super-LHC), with its ten times higher luminosity, or the planned International Linear Collider (ILC) silicon tracking detectors are forseen. Close to the interaction region these detectors have to face harsh radiation fields with intensities above the presently tolerable level. defect engineering of the used material, e. g. oxygen enrichment of high resistivity float zone silicon and growing of thin low resistivityepitaxial layers on Czochralski silicon substrates has been established to improve the radiation hardness of silicon sensors. This thesis focuses mainly on the investigation of radiation induced defects and their differences observed in various kinds of epitaxial silicon material. Comparisons with other materials like float zone or Czochralski silicon are added. Deep Level Transient Spectroscopy (DLTS) and Thermally Stimulated Current (TSC) measurements have been performed after {gamma}-, electron-, proton- and neutron-irradiation. The differenced in the formation of vacancy and interstitial related defects as well as so-called clustered regions were investigated for various types of irradiation. In addition to the well known defects VO{sub i}, C{sub i}O{sub i}, C{sub i}C{sub s}, VP or V{sub 2} several other defect complexes have been found and investigated. Also the material dependence of the defect introduction rates and the defect annealing behavior has been studied by isothermal and isochronal annealing experiments. Especially the IO{sub 2} defect which is an indicator for the oxygen-dimer content of the material has been investigated in detail. On the basis of radiation induced defects like the bistable donor (BD) defect and a deep

Radiation damage in silicon. Defect analysis and detector properties

International Nuclear Information System (INIS)

Hoenniger, F.

2008-01-01

Silicon microstrip and pixel detectors are vital sensor-components as particle tracking detectors for present as well as future high-energy physics (HEP) experiments. All experiments at the large Hadron Collider (LHC) are equipped with such detectors. Also for experiments after the upgrade of the LHC (the so-called Super-LHC), with its ten times higher luminosity, or the planned International Linear Collider (ILC) silicon tracking detectors are forseen. Close to the interaction region these detectors have to face harsh radiation fields with intensities above the presently tolerable level. defect engineering of the used material, e. g. oxygen enrichment of high resistivity float zone silicon and growing of thin low resistivityepitaxial layers on Czochralski silicon substrates has been established to improve the radiation hardness of silicon sensors. This thesis focuses mainly on the investigation of radiation induced defects and their differences observed in various kinds of epitaxial silicon material. Comparisons with other materials like float zone or Czochralski silicon are added. Deep Level Transient Spectroscopy (DLTS) and Thermally Stimulated Current (TSC) measurements have been performed after γ-, electron-, proton- and neutron-irradiation. The differenced in the formation of vacancy and interstitial related defects as well as so-called clustered regions were investigated for various types of irradiation. In addition to the well known defects VO i , C i O i , C i C s , VP or V 2 several other defect complexes have been found and investigated. Also the material dependence of the defect introduction rates and the defect annealing behavior has been studied by isothermal and isochronal annealing experiments. Especially the IO 2 defect which is an indicator for the oxygen-dimer content of the material has been investigated in detail. On the basis of radiation induced defects like the bistable donor (BD) defect and a deep acceptor, a model has been introduced to

Microstructures of beta-silicon carbide after irradiation creep deformation at elevated temperatures

International Nuclear Information System (INIS)

Katoh, Yutai; Kondo, Sosuke; Snead, Lance L.

2008-01-01

Microstructures of silicon carbide were examined by transmission electron microscopy (TEM) after creep deformation under neutron irradiation. Thin strip specimens of polycrystalline and monocrystalline, chemically vapor-deposited, beta-phase silicon carbide were irradiated in the high flux isotope reactor to 0.7-4.2 dpa at nominal temperatures of 640-1080 deg. C in an elastically pre-strained bend stress relaxation configuration with the initial stress of ∼100 MPa. Irradiation creep caused permanent strains of 0.6 to 2.3 x 10 -4 . Tensile-loaded near-surface portions of the crept specimens were examined by TEM. The main microstructural features observed were dislocation loops in all samples, and appeared similar to those observed in samples irradiated in non-stressed conditions. Slight but statistically significant anisotropy in dislocation loop microstructure was observed in one irradiation condition, and accounted for at least a fraction of the creep strain derived from the stress relaxation. The estimated total volume of loops accounted for 10-45% of the estimated total swelling. The results imply that the early irradiation creep deformation of SiC observed in this work was driven by anisotropic evolutions of extrinsic dislocation loops and matrix defects with undetectable sizes

Characterization of silicon microstrip sensors, front-end electronics, and prototype tracking detectors for the CBM experiment at FAIR

Energy Technology Data Exchange (ETDEWEB)

Sorokin, Iurii

2013-07-01

The Compressed Baryonic Matter (CBM) experiment will explore the phase diagram of strongly interacting matter in the region of high net baryonic densities. The matter at the extreme conditions will be studied in collisions of a heavy ion beam with a fixed heavy element target. The present work is devoted to the development of the main component of the CBM experiment - the Silicon Tracking System (STS). The STS has to enable reconstruction of up to 1000 charged particle tracks per nucleus-nucleus interaction at the rate of up to 10 MHz, provide a momentum resolution Δp/p of 1 %, and withstand the radiation load of up to 10{sup 14} n{sub eq}/cm{sup 2} (n{sub eq}-neutron equivalent). The STS will be based on double-sided silicon microstrip sensors, that will be arranged in 8 planes in the aperture of the dipole magnet. Selftriggering readout electronics will be located on the periphery of the detecting planes, and connected to the sensors with low mass microcables. In the stage of R and D, as well as in the stages of pre-series and series production, characterization of the sensors, of the front-end electronics, and of the complete detector modules has to be performed. In the present work the required techniques were developed, and the performance of the latest detector prototypes was evaluated. A particular attention is paid to evaluation of the signal amplitude, as it is one of the most important detector characteristics. Techniques for measuring the passive electrical characteristics of the sensors were developed. These include: the coupling and the interstrip capacitances, the interstrip resistance, the bias resistance, the strip leakage current, the bulk capacitance, and the bulk leakage current. The techniques will be applied for the quality assurance of the sensors during the pre-series and the series production. Extensive characterization of the prototype readout chip, n-XYTER, was performed. The register settings were optimized, and the dependence of the

STATUS OF HIGH FLUX ISOTOPE REACTOR IRRADIATION OF SILICON CARBIDE/SILICON CARBIDE JOINTS

Energy Technology Data Exchange (ETDEWEB)

Katoh, Yutai [ORNL; Koyanagi, Takaaki [ORNL; Kiggans, Jim [ORNL; Cetiner, Nesrin [ORNL; McDuffee, Joel [ORNL

2014-09-01

Development of silicon carbide (SiC) joints that retain adequate structural and functional properties in the anticipated service conditions is a critical milestone toward establishment of advanced SiC composite technology for the accident-tolerant light water reactor (LWR) fuels and core structures. Neutron irradiation is among the most critical factors that define the harsh service condition of LWR fuel during the normal operation. The overarching goal of the present joining and irradiation studies is to establish technologies for joining SiC-based materials for use as the LWR fuel cladding. The purpose of this work is to fabricate SiC joint specimens, characterize those joints in an unirradiated condition, and prepare rabbit capsules for neutron irradiation study on the fabricated specimens in the High Flux Isotope Reactor (HFIR). Torsional shear test specimens of chemically vapor-deposited SiC were prepared by seven different joining methods either at Oak Ridge National Laboratory or by industrial partners. The joint test specimens were characterized for shear strength and microstructures in an unirradiated condition. Rabbit irradiation capsules were designed and fabricated for neutron irradiation of these joint specimens at an LWR-relevant temperature. These rabbit capsules, already started irradiation in HFIR, are scheduled to complete irradiation to an LWR-relevant dose level in early 2015.

Effect of impurities on the growth of {113} interstitial clusters in silicon under electron irradiation

Science.gov (United States)

Nakai, K.; Hamada, K.; Satoh, Y.; Yoshiie, T.

2011-01-01

The growth and shrinkage of interstitial clusters on {113} planes were investigated in electron irradiated Czochralski grown silicon (Cz-Si), floating-zone silicon (Fz-Si), and impurity-doped Fz-Si (HT-Fz-Si) using a high voltage electron microscope. In Fz-Si, {113} interstitial clusters were formed only near the beam incident surface after a long incubation period, and shrank on subsequent irradiation from the backside of the specimen. In Cz-Si and HT-Fz-Si, {113} interstitial clusters nucleated uniformly throughout the specimen without incubation, and began to shrink under prolonged irradiation at higher electron beam intensity. At lower beam intensity, however, the {113} interstitial cluster grew stably. These results demonstrate that the {113} interstitial cluster cannot grow without a continuous supply of impurities during electron irradiation. Detailed kinetics of {113} interstitial cluster growth and shrinkage in silicon, including the effects of impurities, are proposed. Then, experimental results are analyzed using rate equations based on these kinetics.

Belle II silicon vertex detector

Energy Technology Data Exchange (ETDEWEB)

Adamczyk, K. [H. Niewodniczanski Institute of Nuclear Physics, Krakow 31-342 (Poland); Aihara, H. [Department of Physics, University of Tokyo, Tokyo 113-0033 (Japan); Angelini, C. [Dipartimento di Fisica, Università di Pisa, I-56127 Pisa (Italy); INFN Sezione di Pisa, I-56127 Pisa (Italy); Aziz, T.; Babu, V. [Tata Institute of Fundamental Research, Mumbai 400005 (India); Bacher, S. [H. Niewodniczanski Institute of Nuclear Physics, Krakow 31-342 (Poland); Bahinipati, S. [Indian Institute of Technology Bhubaneswar, Satya Nagar (India); Barberio, E.; Baroncelli, Ti.; Baroncelli, To. [School of Physics, University of Melbourne, Melbourne, Victoria 3010 (Australia); Basith, A.K. [Indian Institute of Technology Madras, Chennai 600036 (India); Batignani, G. [Dipartimento di Fisica, Università di Pisa, I-56127 Pisa (Italy); INFN Sezione di Pisa, I-56127 Pisa (Italy); Bauer, A. [Institute of High Energy Physics, Austrian Academy of Sciences, 1050 Vienna (Austria); Behera, P.K. [Indian Institute of Technology Madras, Chennai 600036 (India); Bergauer, T. [Institute of High Energy Physics, Austrian Academy of Sciences, 1050 Vienna (Austria); Bettarini, S. [Dipartimento di Fisica, Università di Pisa, I-56127 Pisa (Italy); INFN Sezione di Pisa, I-56127 Pisa (Italy); Bhuyan, B. [Indian Institute of Technology Guwahati, Assam 781039 (India); Bilka, T. [Faculty of Mathematics and Physics, Charles University, 121 16 Prague (Czech Republic); Bosi, F. [INFN Sezione di Pisa, I-56127 Pisa (Italy); Bosisio, L. [Dipartimento di Fisica, Università di Trieste, I-34127 Trieste (Italy); INFN Sezione di Trieste, I-34127 Trieste (Italy); and others

2016-09-21

The Belle II experiment at the SuperKEKB collider in Japan is designed to indirectly probe new physics using approximately 50 times the data recorded by its predecessor. An accurate determination of the decay-point position of subatomic particles such as beauty and charm hadrons as well as a precise measurement of low-momentum charged particles will play a key role in this pursuit. These will be accomplished by an inner tracking device comprising two layers of pixelated silicon detector and four layers of silicon vertex detector based on double-sided microstrip sensors. We describe herein the design, prototyping and construction efforts of the Belle-II silicon vertex detector.

Crystalline-to-amorphous phase transition in irradiated silicon

International Nuclear Information System (INIS)

Seidman, D.N.; Averback, R.S.; Okamoto, P.R.; Baily, A.C.

1986-01-01

The amorphous(a)-to-crystalline (c) phase transition has been studied in electron(e - ) and/or ion irradiated silicon (Si). The irradiations were performed in situ in the Argonne High Voltage Microscope-Tandem Facility. The irradiation of Si, at 0 K, with 1-MeV e - to a fluence of 14 dpa failed to induce the c-to-a transition. Whereas an irradiation, at 0 K, with 1.0 or 1.5-MeV Kr+ ions induced the c-to-a transition by a fluence of approx.0.37 dpa. Alternatively a dual irradiation, at 10 0 K, with 1.0-MeV e - and 1.0 or 1.5-MeV Kr+ to a Kr+ fluence of 1.5 dpa - where the ratio of the displacement rates for e - to ions was approx.0.5 - resulted in the Si specimen retaining a degree of crystallinity. These results are discussed in terms of the degree of dispersion of point defects in the primary state of damage and the mobilities of point defects

γ-irradiation effect on electronic properties in hydrogenated amorphous silicon

International Nuclear Information System (INIS)

Shirafuji, J.; Nagata, S.; Shirakawa, K.

1986-01-01

γ-irradiation effect on electron transport and photoelectric properties in glow-discharge hydrogenated amorphous silicon is investigated mainly by means of time-of-flight measurement. Although the electron transport changes from non-dispersive to dispersive when the total dose on γ-rays is increased, the electron mobility at room temperature is affected only slightly by γ-irradiation. The γ-irradiation introduces dominantly Si dangling bonds, allowing to study the recombination characteristic as a function of dangling bond density under controllable conditions. It is found that the electron recombination lifetime is inversely proportional to the dangling bond density. (author)

Depletion voltage studies on n-in-n MCz silicon diodes after irradiation with 70 MeV protons

CERN Document Server

Holmkvist, William

2014-01-01

Silicon detectors is the main component in the pixel detectors in the ATLAS experiment at CERN in order to detect the particles and recreate their tracks after a proton-proton collision. One criteria on these detectors is to be able to operate in the high radiation field close to the particle collision. The usual behavior of the silicon detectors is that they get type inverted and an increase in the depletion voltage can be seen after exposed to significant amounts of radiation. In contrast n-type Magnetic Czochralski (MCz) silicon doesn’t follow FZ silicons pattern of getting type inverted when it comes to high energy particle irradiation, in the range of GeV. However it was observed that MCz silicon diodes that had been irradiated with 23 MeV protons followed the FZ silicon behavior and did type invert. The aim of the project is to find out how the depletion voltage of MCz silicon changes after being irradiated by 70 MeV at fluencies of 1E13, 1E14 and 5E14 neq/cm2, to give a further insight of at what en...

Some Recent Developments of Microstrip Antenna

Directory of Open Access Journals (Sweden)

Yong Liu

2012-01-01

Full Text Available Although the microstrip antenna has been extensively studied in the past few decades as one of the standard planar antennas, it still has a huge potential for further developments. The paper suggests three areas for further research based on our previous works on microstrip antenna elements and arrays. One is exploring the variety of microstrip antenna topologies to meet the desired requirement such as ultrawide band (UWB, high gain, miniaturization, circular polarization, multipolarized, and so on. Another is to apply microstrip antenna to form composite antenna which is more potent than the individual antenna. The last is growing towards highly integration of antenna/array and feeding network or operating at relatively high frequencies, like sub-millimeter wave or terahertz (THz wave regime, by using the advanced machining techniques. To support our points of view, some examples of antennas developed in our group are presented and discussed.

Feasibility studies of microelectrode silicon detectors with integrated electronics

International Nuclear Information System (INIS)

Dalla Betta, G.-F.; Batignani, G.; Bettarini, S.; Boscardin, M.; Bosisio, L.; Carpinelli, M.; Dittongo, S.; Forti, F.; Giorgi, M.; Gregori, P.; Lusiani, A.; Manghisoni, M.; Pignatel, G.U.; Rama, M.; Ratti, L.; Re, V.; Sandrelli, F.; Speziali, V.; Svelto, F.; Zorzi, N.

2002-01-01

We describe our experience on design and fabrication, on high-resistivity silicon substrates, of microstrip detectors and integrated electronics, devoted to high-energy physics experiments and medical/industrial imaging applications. We report on the full program of our collaboration, with particular regards to the tuning of a new fabrication process, allowing for the production of good quality transistors, while keeping under control the basic detector parameters, such as leakage current. Experimental results on JFET and bipolar transistors are presented, and a microstrip detector with an integrated JFET in source-follower configuration is introduced

ROS enhancement by silicon nanoparticles in X-ray irradiated aqueous suspensions and in glioma C6 cells

International Nuclear Information System (INIS)

David Gara, Pedro M.; Garabano, Natalia I.; Llansola Portoles, Manuel J.; Moreno, M. Sergio; Dodat, Diego; Casas, Oscar R.; Gonzalez, Mónica C.; Kotler, Mónica L.

2012-01-01

The capability of silicon nanoparticles to increase the yield of reactive species upon 4 MeV X-ray irradiation of aqueous suspensions and C6 glioma cell cultures was investigated. ROS generation was detected and quantified using several specific probes. The particles were characterized by FTIR, XPS, TEM, DLS, luminescence, and adsorption spectroscopy before and after irradiation to evaluate the effect of high energy radiation on their structure. The total concentration of O 2 •− /HO 2 • , HO • , and H 2 O 2 generated upon 4-MeV X-ray irradiation of 6.4 μM silicon nanoparticle aqueous suspensions were on the order of 10 μM per Gy, ten times higher than that obtained in similar experiments but in the absence of particles. Cytotoxic 1 O 2 was generated only in irradiation experiments containing the particles. The particle surface became oxidized to SiO 2 and the luminescence yield reduced with the irradiation dose. Changes in the surface morphology did not affect, within the experimental error, the yields of ROS generated per Gy. X-ray irradiation of glioma C6 cell cultures with incorporated silicon nanoparticles showed a marked production of ROS proportional to the radiation dose received. In the absence of nanoparticles, the cells showed no irradiation-enhanced ROS generation. The obtained results indicate that silicon nanoparticles of 1 O 2 upon X-ray irradiation opens novel approaches in the design of therapy strategies.

The ARGUS silicon vertex detector

International Nuclear Information System (INIS)

Michel, E.; Ball, S.; Ehret, K.; Geyer, C.; Hesselbarth, J.; Hoelscher, A.; Hofmann, W.; Holzer, B.; Huepper, A.; Khan, S.; Knoepfle, K.T.; Seeger, M.; Spengler, J.; Brogle, M.; Horisberger, R.

1994-01-01

A silicon microstrip vertex detector has been built as an upgrade to the ARGUS detector for increased precision and efficiency in the reconstruction of decay vertices. This paper discusses the mechanical and electronic design of this device and presents first results from its successful test operation yielding an impact parameter resolution of about 18 μm. ((orig.))

Observation, modeling, and temperature dependence of doubly peaked electric fields in irradiated silicon pixel sensors

CERN Document Server

Swartz, M.; Allkofer, Y.; Bortoletto, D.; Cremaldi, L.; Cucciarelli, S.; Dorokhov, A.; Hoermann, C.; Kim, D.; Konecki, M.; Kotlinski, D.; Prokofiev, Kirill; Regenfus, Christian; Rohe, T.; Sanders, D.A.; Son, S.; Speer, T.

2006-01-01

We show that doubly peaked electric fields are necessary to describe grazing-angle charge collection measurements of irradiated silicon pixel sensors. A model of irradiated silicon based upon two defect levels with opposite charge states and the trapping of charge carriers can be tuned to produce a good description of the measured charge collection profiles in the fluence range from 0.5x10^{14} Neq/cm^2 to 5.9x10^{14} Neq/cm^2. The model correctly predicts the variation in the profiles as the temperature is changed from -10C to -25C. The measured charge collection profiles are inconsistent with the linearly-varying electric fields predicted by the usual description based upon a uniform effective doping density. This observation calls into question the practice of using effective doping densities to characterize irradiated silicon.

Hyperon production in proton-nucleus collisions at a center-of-mass energy of {radical}(s{sub NN}) = 41.6 GeV at HERA-B and design of silicon microstrip detectors for tracking at LHCb

Energy Technology Data Exchange (ETDEWEB)

Agari, Michaela

2006-07-01

The topics of this thesis are the measurements of hyperon production in protonnucleus collisions at {radical}(s)=41.6 GeV with the Hera-B detector located at DESY, Hamburg (Germany), and the design of silicon microstrip sensors for the LHCb experiment at CERN, Geneva (Switzerland). {lambda}, {xi} and {omega} hyperons and their antiparticles were reconstructed from 113.5 . 10{sup 6} inelastic collisions of protons with fixed carbon, titanium and tungsten targets. With these samples, antiparticle-to-particle ratios, cross sections integrated for the accessible kinematic region of Hera-B and single differential cross sections as function of transverse momentum, d{sigma}/dp{sub T}{sup 2} (for {lambda} and {xi}) and rapidity, d{sigma}/dy (for {lambda} only), have been been measured as well as the dependence of these quantities on the atomic number of the target nucleus, as parameterized using the Glauber model. The obtained ratios follow the same trend as found for the energy dependence of measurements from nucleus-nucleus collisions. Silicon microstrip sensors have been designed for the tracking system of the LHCb detector. Evaluating the performance in beam tests at CERN, the strip geometry and sensor thickness were varied optimizing for a large signal-to-noise ratio, a small number of read-out channels and a low occupancy. The detector is currently being built to be operational for first proton-proton collisions in autumn 2007. (orig.)

The Silicon Vertex Detector for b-tagging at Belle II

International Nuclear Information System (INIS)

Valentan, M.

2013-01-01

building a high luminosity B factory and a high precision particle detector, and an introduction to the Belle II experiment, outlining purpose and working principle of the involved subdetectors. More details are given on the Belle II SVD, including mechanical structure, sensors, electrical readout and cooling. Furthermore, the basics of semiconductor physics and silicon processing are reviewed, and the principles of single-sided and double-sided silicon microstrip sensors are explained in detail. The author's main task was to develop a trapezoidal double-sided silicon microstrip sensor for the forward region of the Belle II SVD, from the initial CAD drawings to the production. He developed a software framework aiming at fast and flexible design of double-sided silicon microstrip sensors, both for rectangular and trapezoidal shapes. Using this framework, a whole wafer was equipped with a full-scale trapezoidal sensor, several test sensors for optimising the layout, and test structures. Several batches of prototype sensors were produced by Micron Semiconductor Ltd. in England, in close collaboration with the author. The wafer contains small test sensors dedicated to investigating the strip insulation on the n-side, featuring the p-stop blocking method (in three geometry patterns: atoll, common and a combined variant) and of the p-spray blocking method. These sensors have been extensively tested by the author in particle beams and gamma irradiations, showing that the atoll p-stop pattern is best suited for application at Belle II. The full-scale prototype sensors were thoroughly tested by the author in the semiconductor laboratory and in particle beams, long-term stability has been demonstrated by irradiation and thermal cycling campaigns. The knowledge gained by examining the test sensors and full-scale sensors led to an update of the design of the full-scale sensor. After production of another prototype batch the updated design was evaluated, compliance with the

BI-ground microstrip array coil vs. conventional microstrip array coil for mouse imaging at 7 tesla

Science.gov (United States)

Hernández, Ricardo; Terrones, M. A. López; Jakob, P. M.

2012-10-01

At high field strengths, the need for more efficient high frequency coils has grown. Since the radiation losses and the interaction between coil and sample increase proportionally to field strength, the quality factor (Q) and the sensitivity of the coil decrease as consequence of these negative effects. Since Zhang et al proposed in 2001 a new surface coil based on the microstrip transmission line for high frequency, different Tx-Rx phased arrays based on this concept have been already introduced in animal and whole body systems at high field strengths, each of them with different modifications in order to get better field homogeneity, SNR or isolation between coil elements in the array. All these arrays for animals systems have been built for rat imaging. One of these modifications is called BI-Ground Microstrip Array Coil (BIGMAC). The implementation of a smaller two-channel BIGMAC design for mouse imaging is studied and its performance compared to a two-channel conventional Microstrip array at 7 Tesla, the higher isolation by using BIGMAC elements in comparison with conventional Microstrip elements is shown in this work.

The solenoidal detector collaboration silicon detector system

International Nuclear Information System (INIS)

Ziock, H.J.; Gamble, M.T.; Miller, W.O.; Palounek, A.P.T.; Thompson, T.C.

1992-01-01

Silicon tracking systems (STS) will be fundamental components of the tracking systems for both planned major SSC experiments. The STS is physically a small part of the central tracking system and the calorimeter of the detector being proposed by the Solenoidal Detector Collaboration (SDC). Despite its seemingly small size, it occupies a volume of more than 5 meters in length and 1 meter in diameter and is an order of magnitude larger than any silicon detector system previously built. The STS will consist of silicon microstrip detectors and possibly silicon pixel detectors. The other two components are an outer barrel tracker, which will consist of straw tubes or scintillating fibers; and an outer intermediate angle tracker, which will consist of gas microstrips. The components are designed to work as an integrated system. Each componenet has specific strengths, but is individually incapable of providing the overall performance required by the physics goals of the SSC. The large particle fluxes, the short times between beam crossing, the high channel count, and the required very high position measurement accuracy pose challenging problems that must be solved. Furthermore, to avoid degrading the measurements, the solutions must be achieved using only a minimal amount of material. An additional constraint is that only low-Z materials are allowed. If that were not difficlut enough, the solutions must also be affordable

Silicon microstrip detectors in 3D technology for the sLHC

Energy Technology Data Exchange (ETDEWEB)

Parzefall, Ulrich [Physikalisches Institut, Universitaet Freiburg, Hermann-Herder-Str. 3, D-79104 Freiburg (Germany)], E-mail: ulrich.parzefall@physik.uni-freiburg.de; Dalla Betta, Gian-Franco [INFN and Universita' di Trento, via Sommarive 14, 38050 Povo di Trento (Italy); Eckert, Simon [Physikalisches Institut, Universitaet Freiburg, Hermann-Herder-Str. 3, D-79104 Freiburg (Germany); Eklund, Lars; Fleta, Celeste [University of Glasgow, Department of Physics and Astronomy, Glasgow G12 8QQ (United Kingdom); Jakobs, Karl; Kuehn, Susanne; Pahn, Gregor [Physikalisches Institut, Universitaet Freiburg, Hermann-Herder-Str. 3, D-79104 Freiburg (Germany); Parkes, Chris; Pennicard, David [University of Glasgow, Department of Physics and Astronomy, Glasgow G12 8QQ (United Kingdom); Ronchin, Sabina [FBK-irst, Center for Materials and Microsystems, via Sommarive 18, 38050 Povo di Trento (Italy); Zoboli, Andrea [INFN and Universita' di Trento, via Sommarive 14, 38050 Povo di Trento (Italy); Zorzi, Nicola [FBK-irst, Center for Materials and Microsystems, via Sommarive 18, 38050 Povo di Trento (Italy)

2009-08-01

The projected luminosity upgrade of the large hadron collider (LHC), the sLHC, will constitute a challenging radiation environment for tracking detectors. Massive improvements in radiation hardness are required with respect to the LHC. In the layout for the new ATLAS tracker, silicon strip detectors (SSDs) with short strips cover the region from 28 to 60 cm distance to the beam. These SSDs will be exposed to fluences up to 10{sup 15}N{sub eq}/cm{sup 2}, hence radiation resistance is the major concern. It is advantageous to fuse the superior radiation hardness of the 3D design originally conceived for pixel-style applications with the benefits of the well-known planar technology for strip detectors. This is achieved by ganging rows of 3D columns together to form strips. Several prototype sLHC detector modules using 3D SSD with short strips, processed on p-type silicon, and LHC-speed front-end electronics from the present ATLAS semi-conductor tracker (SCT) were built. The modules were tested before and after irradiation to fluences of 10{sup 15}N{sub eq}/cm{sup 2}. The tests were performed with three systems: a highly focused IR-laser with 5{mu}m spot size to make position-resolved scans of the charge collection efficiency (CCE), a Sr{sup 90}{beta}-source set-up to measure the signal levels for a minimum ionizing particles (MIPs), and a beam test with 180 GeV pions at CERN. This article gives a brief overview of the performance of these 3D modules, and draws conclusions about options for using 3D strip sensors as tracking detectors at the sLHC.

Silicon microstrip detectors in 3D technology for the sLHC

International Nuclear Information System (INIS)

Parzefall, Ulrich; Dalla Betta, Gian-Franco; Eckert, Simon; Eklund, Lars; Fleta, Celeste; Jakobs, Karl; Kuehn, Susanne; Pahn, Gregor; Parkes, Chris; Pennicard, David; Ronchin, Sabina; Zoboli, Andrea; Zorzi, Nicola

2009-01-01

The projected luminosity upgrade of the large hadron collider (LHC), the sLHC, will constitute a challenging radiation environment for tracking detectors. Massive improvements in radiation hardness are required with respect to the LHC. In the layout for the new ATLAS tracker, silicon strip detectors (SSDs) with short strips cover the region from 28 to 60 cm distance to the beam. These SSDs will be exposed to fluences up to 10 15 N eq /cm 2 , hence radiation resistance is the major concern. It is advantageous to fuse the superior radiation hardness of the 3D design originally conceived for pixel-style applications with the benefits of the well-known planar technology for strip detectors. This is achieved by ganging rows of 3D columns together to form strips. Several prototype sLHC detector modules using 3D SSD with short strips, processed on p-type silicon, and LHC-speed front-end electronics from the present ATLAS semi-conductor tracker (SCT) were built. The modules were tested before and after irradiation to fluences of 10 15 N eq /cm 2 . The tests were performed with three systems: a highly focused IR-laser with 5μm spot size to make position-resolved scans of the charge collection efficiency (CCE), a Sr 90 β-source set-up to measure the signal levels for a minimum ionizing particles (MIPs), and a beam test with 180 GeV pions at CERN. This article gives a brief overview of the performance of these 3D modules, and draws conclusions about options for using 3D strip sensors as tracking detectors at the sLHC.

Damage effects and mechanisms of proton irradiation on methyl silicone rubber

International Nuclear Information System (INIS)

Zhang, L.X.; He, Sh.Y.; Xu, Zh.; Wei, Q.

2004-01-01

A study was performed on the damage effects and mechanisms of proton irradiation with 150 keV energy to space-grade methyl silicone rubber. The changes in surface morphology, mechanical properties, infrared attenuated total reflection (ATR) spectrum, mass spectrum and pyrolysis gas chromatography-mass spectrum (PYGC-MS) indicated that, under lower fluence, the proton radiation would induce cross-linking effect, resulting in an increase in tensile strengths and hardness of the methyl silicon rubber. However, under higher proton fluence, the radiation-induced degradation, which decreased the tensile strengths and hardness, became a dominant effect. A macromolecular-network destruction model for the silicone rubber radiated with the protons was proposed

The BaBar silicon vertex tracker, performance and running experience

CERN Document Server

Re, V; Bozzi, C; Carassiti, V; Cotta-Ramusino, A; Piemontese, L; Breon, A B; Brown, D; Clark, A R; Goozen, F; Hernikl, C; Kerth, L T; Gritsan, A; Lynch, G; Perazzo, A; Roe, N A; Zizka, G; Roberts, D; Schieck, J; Brenna, E; Citterio, M; Lanni, F; Palombo, F; Ratti, L; Manfredi, P F; Angelini, C; Batignani, G; Bettarini, S; Bondioli, M; Bosi, F; Bucci, F; Calderini, G; Carpinelli, M; Ceccanti, M; Forti, F; Gagliardi, D J; Giorgi, M A; Lusiani, A; Mammini, P; Morganti, M; Morsani, F; Neri, N; Paoloni, E; Profeti, A; Rama, M; Rizzo, G; Sandrelli, F; Simi, G; Triggiani, G; Walsh, J; Burchat, Patricia R; Cheng, C; Kirkby, D; Meyer, T I; Roat, C; Bóna, M; Bianchi, F; Gamba, D; Trapani, P; Bosisio, L; Della Ricca, G; Dittongo, S; Lanceri, L; Pompili, A; Poropat, P; Rashevskaia, I; Vuagnin, G; Burke, S; Callahan, D; Campagnari, C; Dahmes, B; Hale, D; Hart, P; Kuznetsova, N; Kyre, S; Levy, S; Long, O; May, J; Mazur, M; Richman, J; Verkerke, W; Witherell, M; Beringer, J; Eisner, A M; Frey, A; Grillo, A A; Grothe, M; Johnson, R P; Kröger, W; Lockman, W S; Pulliam, T; Rowe, W; Schmitz, R E; Seiden, A; Spencer, E N; Turri, M; Walkowiak, W; Wilder, M; Wilson, M; Charles, E; Elmer, P; Nielsen, J; Orejudos, W; Scott, I; Zobernig, H

2002-01-01

The Silicon Vertex Tracker (SVT) of the BaBar experiment at the PEP-II asymmetric B factory is a five-layer double-sided, AC-coupled silicon microstrip detector. It represents the crucial element to precisely measure the decay position of B mesons and extract time-dependent CP asymmetries. The SVT architecture is shown and its performance is described, with emphasis on hit resolutions and efficiencies.

The BaBar silicon vertex tracker, performance and running experience

International Nuclear Information System (INIS)

Re, V.; Borean, C.; Bozzi, C.; Carassiti, V.; Cotta Ramusino, A.; Piemontese, L.; Breon, A.B.; Brown, D.; Clark, A.R.; Goozen, F.; Hernikl, C.; Kerth, L.T.; Gritsan, A.; Lynch, G.; Perazzo, A.; Roe, N.A.; Zizka, G.; Roberts, D.; Schieck, J.; Brenna, E.; Citterio, M.; Lanni, F.; Palombo, F.; Ratti, L.; Manfredi, P.F.; Angelini, C.; Batignani, G.; Bettarini, S.; Bondioli, M.; Bosi, F.; Bucci, F.; Calderini, G.; Carpinelli, M.; Ceccanti, M.; Forti, F.; Gagliardi, D.; Giorgi, M.A.; Lusiani, A.; Mammini, P.; Morganti, M.; Morsani, F.; Neri, N.; Paoloni, E.; Profeti, A.; Rama, M.; Rizzo, G.; Sandrelli, F.; Simi, G.; Triggiani, G.; Walsh, J.; Burchat, P.; Cheng, C.; Kirkby, D.; Meyer, T.I.; Roat, C.; Bona, M.; Bianchi, F.; Gamba, D.; Trapani, P.; Bosisio, L.; Della Ricca, G.; Dittongo, S.; Lanceri, L.; Pompili, A.; Poropat, P.; Rashevskaia, I.; Vuagnin, G.; Burke, S.; Callahan, D.; Campagnari, C.; Dahmes, B.; Hale, D.; Hart, P.; Kuznetsova, N.; Kyre, S.; Levy, S.; Long, O.; May, J.; Mazur, M.; Richman, J.; Verkerke, W.; Witherell, M.; Beringer, J.; Eisner, A.M.; Frey, A.; Grillo, A.A.; Grothe, M.; Johnson, R.P.; Kroeger, W.; Lockman, W.S.; Pulliam, T.; Rowe, W.; Schmitz, R.E.; Seiden, A.; Spencer, E.N.; Turri, M.; Walkowiak, W.; Wilder, M.; Wilson, M.; Charles, E.; Elmer, P.; Nielsen, J.; Orejudos, W.; Scott, I.; Zobernig, H.

2002-01-01

The Silicon Vertex Tracker (SVT) of the BaBar experiment at the PEP-II asymmetric B factory is a five-layer double-sided, AC-coupled silicon microstrip detector. It represents the crucial element to precisely measure the decay position of B mesons and extract time-dependent CP asymmetries. The SVT architecture is shown and its performance is described, with emphasis on hit resolutions and efficiencies

Control and data acquisition electronics for the CDF Silicon Vertex Detector

Energy Technology Data Exchange (ETDEWEB)

Turner, K.J.; Nelson, C.A.; Shaw, T.M.; Wesson, T.R.

1991-11-01

A control and data acquisition system has been designed for the CDF Silicon Vertex Detector (SVX) at Fermilab. The system controls the operation of the SVX Rev D integrated circuit (SVX IC) that is used to instrument a 46,000 microstrip silicon detector. The system consists of a Fastbus Sequencer, a Crate Controller and Digitizer modules. 11 refs., 6 figs., 3 tabs.

Control and data acquisition electronics for the CDF Silicon Vertex Detector

International Nuclear Information System (INIS)

Turner, K.J.; Nelson, C.A.; Shaw, T.M.; Wesson, T.R.

1991-11-01

A control and data acquisition system has been designed for the CDF Silicon Vertex Detector (SVX) at Fermilab. The system controls the operation of the SVX Rev D integrated circuit (SVX IC) that is used to instrument a 46,000 microstrip silicon detector. The system consists of a Fastbus Sequencer, a Crate Controller and Digitizer modules. 11 refs., 6 figs., 3 tabs

Control and data acquisition electronics for the CDF silicon vertex detector

International Nuclear Information System (INIS)

urner, K.J.; Nelson, C.A.; Shaw, T.M.; Wesson, T.R.

1992-01-01

This paper reports on a control and data acquisition system that has been designed for the CDF Silicon Vertex Detector (SVX) at Fermilab. The system controls the operation of the SVX Rev D integrated circuit (SVX IC) that is used to instrument a 46,000 microstrip silicon detector. The system consists of a Fastbus Sequencer, a Crate Controller and Digitizer modules

Studies of deep levels in He+-irradiated silicon

International Nuclear Information System (INIS)

Schmidt, D.C.; Barbot, J.F.; Blanchard, C.

1997-01-01

Deep levels created in n-epitaxial silicon by alpha particle irradiation in the dose range from 10 9 to 10 13 particles/cm 2 have been investigated by the deep level transient spectroscopy technique and capacitance-voltage profiling. Under low fluence irradiation at least four main electron traps have been observed. With further increase in irradiation fluence, two new levels located at E c -0.56 eV and E c -0.64 eV appear on the high-temperature side of the DLTS signal. The slope change observed in the amplitude variations of the singly negative charge state of the divacancy versus the dose takes place when these two new levels appear. This suggests that both are multivacancy-related defects. After annealing at 350 C for 15 min, all electron traps have disappeared. Moreover, no shallow levels are created during the annealing. (orig.)

Electron beam irradiation after reconstruction with silicone gel implant in breast cancer

International Nuclear Information System (INIS)

Krishnan, L.; Krishnan, E.C.

1986-01-01

Irradiation for breast cancer in the presence of a silicone gel breast prosthesis is sometimes necessary. There is a concern among radiation and other oncologists as to whether the presence of the prosthetic implant would interfere with delivery of the needed irradiation doses. Electron beams, with their finite penetration and rapid fall-off, offer a mode of adequately treating the recurrence and minimizing the radiation to the underlying normal structures, such as the lung and the heart. The dose distribution using 9-20 MeV electrons in the presence of a breast prosthesis is compared to the dose distribution without the implant in a tissue equivalent water phantom. The results reveal no significant difference in the dose delivered due to the presence of the prosthesis. Clinical verification of the dosimetry in the presence of the prosthesis confirmed that the presence of the silicone gel implant does not compromise treatment by irradiation in the management of breast cancer

SiO2 on silicon: behavior under heavy ion irradiation

International Nuclear Information System (INIS)

Rotaru, C.

2004-03-01

Heavy ion irradiation was performed on a-SiO 2 layers deposited on Si. Damage of the surface was studied by means of Atomic Force Microscopy. Hillocks appear for an electronic stopping power higher than 16 keV/nm. The height of the hillocks decreases with the thickness of the oxide layer. Infrared Spectroscopy studies show that the damage threshold for a-SiO 2 is at an electronic stopping power of 2 keV/nm. Therefore it is probable that the origin of the hillocks comes from the silicon layer. This could be explain within the frame of thermal spike model. The theoretical thresholds are 8 keV/nm and 1.8 keV/nm for silicon and a-SiO 2 respectively. Chemical etching after irradiation gives a technical possibility to create nano-pits, whose size and shape can be controlled. Additionally, these structures allowed to determine the AFM tip radius. (author)

A comprehensive analysis of irradiated silicon detectors at cryogenic temperatures

CERN Document Server

Santocchia, A; Hall, G; MacEvoy, B; Moscatelli, F; Passeri, D; Pignatel, Giogrio Umberto

2003-01-01

The effect of particle irradiation on high-resistivity silicon detectors has been extensively studied with the goal of engineering devices able to survive the very challenging radiation environment at the CERN Large Hadron Collider (LHC). The main aspect under investigation has been the changes observed in detector effective doping concentration (N/sub eff/). We have previously proposed a mechanism to explain the evolution of N/sub eff/, whereby charge is exchanged directly between closely-spaced defect centres in the dense terminal clusters formed by hadron irradiation. This model has been implemented in both a commercial finite-element device simulator (ISE-TCAD) and a purpose-built simulation of interdefect charge exchange. To control the risk of breakdown due to the high leakage currents foreseen during ten years of LHC operation, silicon detectors will be operated below room temperature (around -10 degrees C). This, and more general current interest in the field of cryogenic operation, has led us to inve...

Effect of impurities on the growth of {113} interstitial clusters in silicon under electron irradiation

OpenAIRE

Nakai, K.; Hamada, K.; Satoh, Y.; Yoshiie, T.

2011-01-01

The growth and shrinkage of interstitial clusters on {113} planes were investigated in electron irradiated Czochralski grown silicon (Cz-Si), floating-zone silicon (Fz-Si), and impurity-doped Fz-Si (HT-Fz-Si) using a high voltage electron microscope. In Fz-Si, {113} interstitial clusters were formed only near the beam incident surface after a long incubation period, and shrank on subsequent irradiation from the backside of the specimen. In Cz-Si and HT-Fz-Si, {113} interstitial clusters nucle...

Neutron irradiation induced amorphization of silicon carbide

International Nuclear Information System (INIS)

Snead, L.L.; Hay, J.C.

1998-01-01

This paper provides the first known observation of silicon carbide fully amorphized under neutron irradiation. Both high purity single crystal hcp and high purity, highly faulted (cubic) chemically vapor deposited (CVD) SiC were irradiated at approximately 60 C to a total fast neutron fluence of 2.6 x 10 25 n/m 2 . Amorphization was seen in both materials, as evidenced by TEM, electron diffraction, and x-ray diffraction techniques. Physical properties for the amorphized single crystal material are reported including large changes in density (-10.8%), elastic modulus as measured using a nanoindentation technique (-45%), hardness as measured by nanoindentation (-45%), and standard Vickers hardness (-24%). Similar property changes are observed for the critical temperature for amorphization at this neutron dose and flux, above which amorphization is not possible, is estimated to be greater than 130 C

ATLAS Silicon Microstrip Tracker Operation and Performance

CERN Document Server

Barone, G; The ATLAS collaboration

2013-01-01

The Semi-Conductor Tracker (SCT) is a silicon strip detector and one of the key precision tracking devices in the Inner Detector of the ATLAS experiment at CERN LHC. The SCT is constructed of 4088 silicon detector modules for a total of 6.3 million strips. Each module is designed, constructed and tested to operate as a stand-alone unit, mechanically, electrically, optically and thermally. The modules are mounted into two types of structures: one barrel (4 cylinders) and two end-cap systems (9 disks on each end of the barrel). In the talk the current results from the successful operation of the SCT Detector at the LHC and its status after three years of operation will be presented. We will report on the operation of the detector including an overview of the issues we encountered and the observation of significant increases in leakage currents (as expected) from bulk damage due to non-ionising radiation. The main emphasis will be given to the tracking performance of the SCT and the data quality during the >2 ye...

ATLAS Silicon Microstrip Tracker Operation and Performance

CERN Document Server

Barone, G; The ATLAS collaboration

2013-01-01

The Semi-Conductor Tracker (SCT) is a silicon strip detector and one of the key precision tracking devices of the Inner Detector of the ATLAS experiment at CERN LHC. The SCT is constructed of $4088$ silicon detector modules for a total of 6.3 million channels. Each module is designed, constructed and tested to operate as a stand-alone unit, mechanically, electrically, optically and thermally. The modules are mounted into two types of structures: one barrel ($4$ cylinders) and two end-cap systems (9 disks on each). The current results from the successful operation of the SCT Detector at the LHC and its status after three years of operation will be presented. The operation of the detector including an overview of the main issues encountered is reported. The main emphasis is be given to the tracking performance of the SCT and the data quality during the $>2$ years of data taking of proton-proton collision data at $7$ TeV (and short periods of heavy ion collisions). The SCT has been fully operational throughout a...

Fabrication and impact performance of three-dimensionally integrated microstrip antennas with microstrip and coaxial feeding

International Nuclear Information System (INIS)

Yao, Lan; Wang, Xin; Xu, Fujun; Zhao, Da; Jiang, Muwen; Qiu, Yiping

2009-01-01

A conformal load-bearing antenna structure (CLAS) combines the antenna into a composite structure such that it can carry the designed load while functioning as an antenna. In this paper, two types of new 3D integrated microstrip antennas (3DIMAs) with different feeding methods are designed to work at the radar L-band. Different from the conventional CLAS, the radiating patch and the ground plane of the 3DIMA are both composed of woven conductive wires and are bonded into the 3D composite physically by Z-yarns, greatly improving the damage tolerance of the antenna. The return loss of the coaxial-fed antenna is −13.15 dB with a resonant frequency of 1.872 GHz, while that of the microstrip-fed antenna is −31.50 dB with a resonant frequency of 1.33 GHz. Both of the 3DIMAs have similar radiation patterns to that of the traditionally designed microstrip antenna. In addition, an experimental investigation of the impact response of the coaxial-fed 3DIMA was carried out and the results showed the radiation pattern had almost no change even when the antenna received an impact energy of 15 J, exhibiting superior impact resistance to that of a conventional microstrip antenna

The development of p-type silicon detectors for the high radiation regions of the LHC

CERN Document Server

Hanlon, M D L

1998-01-01

This thesis describes the production and characterisation of silicon microstrip detectors and test structures on p-type substrates. An account is given of the production and full parameterisation of a p-type microstrip detector, incorporating the ATLAS-A geometry in a beam test. This detector is an AC coupled device incorporating a continuous p-stop isolation frame and polysilicon biasing and is typical of n-strip devices proposed for operation at the LHC. It was successfully read out using the FELix-128 analogue pipeline chip and a signal to noise (s/n) of 17+-1 is reported, along with a spatial resolution of 14.6+-0.2 mu m. Diode test structures were fabricated on both high resistivity float zone material and on epitaxial material and subsequently irradiated with 24 GeV protons at the CERN PS up to a dose of (8.22+-0.23) x 10 sup 1 sup 4 per cm sup 2. An account of the measurement program is presented along with results on the changes in the effective doping concentration (N sub e sub f sub f) with irradiat...

ROS enhancement by silicon nanoparticles in X-ray irradiated aqueous suspensions and in glioma C6 cells

Energy Technology Data Exchange (ETDEWEB)

David Gara, Pedro M. [CITOMA, Fundacion Avanzar, Instituto de Terapia Radiante S.A., CIO La Plata (Argentina); Garabano, Natalia I. [University of Buenos Aires, Departamento de Quimica Biologica, Facultad de Ciencias Exactas y Naturales, UBA (Argentina); Llansola Portoles, Manuel J. [UNLP, INIFTA, Departamento de Quimica, Facultad de Ciencias Exactas (Argentina); Moreno, M. Sergio [Centro Atomico Bariloche (Argentina); Dodat, Diego; Casas, Oscar R. [CITOMA, Fundacion Avanzar, Instituto de Terapia Radiante S.A., CIO La Plata (Argentina); Gonzalez, Monica C., E-mail: gonzalez@inifta.unlp.edu.ar [UNLP, INIFTA, Departamento de Quimica, Facultad de Ciencias Exactas (Argentina); Kotler, Monica L., E-mail: kotler@qb.fcen.uba.ar [University of Buenos Aires, Departamento de Quimica Biologica, Facultad de Ciencias Exactas y Naturales, UBA (Argentina)

2012-03-15

The capability of silicon nanoparticles to increase the yield of reactive species upon 4 MeV X-ray irradiation of aqueous suspensions and C6 glioma cell cultures was investigated. ROS generation was detected and quantified using several specific probes. The particles were characterized by FTIR, XPS, TEM, DLS, luminescence, and adsorption spectroscopy before and after irradiation to evaluate the effect of high energy radiation on their structure. The total concentration of O{sub 2}{sup Bullet -}/HO{sub 2}{sup Bullet}, HO{sup Bullet}, and H{sub 2}O{sub 2} generated upon 4-MeV X-ray irradiation of 6.4 {mu}M silicon nanoparticle aqueous suspensions were on the order of 10 {mu}M per Gy, ten times higher than that obtained in similar experiments but in the absence of particles. Cytotoxic {sup 1}O{sub 2} was generated only in irradiation experiments containing the particles. The particle surface became oxidized to SiO{sub 2} and the luminescence yield reduced with the irradiation dose. Changes in the surface morphology did not affect, within the experimental error, the yields of ROS generated per Gy. X-ray irradiation of glioma C6 cell cultures with incorporated silicon nanoparticles showed a marked production of ROS proportional to the radiation dose received. In the absence of nanoparticles, the cells showed no irradiation-enhanced ROS generation. The obtained results indicate that silicon nanoparticles of <5 nm size have the potential to be used as radiosensitizers for improving the outcomes of cancer radiotherapy. Their capability of producing {sup 1}O{sub 2} upon X-ray irradiation opens novel approaches in the design of therapy strategies.

Construction of the CDF silicon vertex detector

International Nuclear Information System (INIS)

Skarha, J.; Barnett, B.; Boswell, C.; Snider, F.; Spies, A.; Tseng, J.; Vejcik, S.; Carter, H.; Flaugher, B.; Gonzales, B.; Hrycyk, M.; Nelson, C.; Segler, S.; Shaw, T.; Tkaczyk, S.; Turner, K.; Wesson, T.; Carithers, W.; Ely, R.; Haber, C.; Holland, S.; Kleinfelder, S.; Merrick, T.; Schneider, O.; Wester, W.; Wong, M.; Amidei, D.; Derwent, P.; Gold, M.; Matthews, J.; Bacchetta, N.; Bisello, D.; Busetto, G.; Castro, A.; Loreti, M.; Pescara, L.; Bedeschi, F.; Bolognesi, V.; Dell'Agnello, S.; Galeotti, S.; Mariotti, M.; Menzione, A.; Punzi, G.; Raffaelli, F.; Risotri, L.; Tartarelli, F.; Turini, N.; Wenzel, H.; Zetti, F.; Bailey, M.; Garfinkel, A.; Shaw, N.; Tipton, P.; Watts, G.

1992-04-01

Technical details and methods used in constructing the CDF silicon vertex detector are presented. This description includes a discussion of the foam-carbon fiber composite structure used to silicon microstrip detectors and the procedure for achievement of 5 μm detector alignment. The construction of the beryllium barrel structure, which houses the detector assemblies, is also described. In addition, the 10 μm placement accuracy of the detectors in the barrel structure is discussed and the detector cooling and mounting systems are described. 12 refs

Deep level centers in electron-irradiated silicon crystals doped with copper at different temperatures

Energy Technology Data Exchange (ETDEWEB)

Yarykin, Nikolai [Institute of Microelectronics Technology, RAS, Chernogolovka (Russian Federation); Weber, Joerg [Technische Universitaet Dresden (Germany)

2017-07-15

The effect of bombardment with energetic particles on the deep-level spectrum of copper-contaminated silicon wafers is studied by space charge spectroscopy methods. The p-type FZ-Si wafers were doped with copper in the temperature range of 645-750 C and then irradiated with the 10{sup 15} cm{sup -2} fluence of 5 MeV electrons at room temperature. Only the mobile Cu{sub i} species and the Cu{sub PL} centers are detected in significant concentrations in the non-irradiated Cu-doped wafers. The properties of the irradiated samples are found to qualitatively depend on the copper in-diffusion temperature T{sub diff}. For T{sub diff} > 700 C, the irradiation partially reduces the Cu{sub i} concentration and introduces additional Cu{sub PL} centers while no standard radiation defects are detected. If T{sub diff} was below ∝700 C, the irradiation totally removes the mobile Cu{sub i} species. Instead, the standard radiation defects and their complexes with copper appear in the deep-level spectrum. A model for the defects reaction scheme during the irradiation is derived and discussed. DLTS spectrum of the Cu-contaminated and then irradiated silicon qualitatively depends on the copper in-diffusion temperature. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Gamma and Neutron Irradiation of Semitransparent Amorphous Silicon Sensors

International Nuclear Information System (INIS)

Carabe, J.; Fernandez, M. G.; Ferrando, A.; Fuentes, J.; Gandia, J.; Josa, M. I.; Molinero, A.; Oller, J. C.; Arce, P.; Calvo, E.; Figueroa, C. F.; Garcia, N.; Matorras, F.; Rodrigo, T.; Vila, I.; Virto, A. L.; Fenyvesi, A.; Molnar, J.; Sohler, D.

1999-12-01

Semitransparent amorphous silicon sensors are key elements for laser light 2D position reconstruction in the CMS multipoint alignment link system. Some of the sensors have to work in very hard radiation environment. We have irradiated with gammas, up to 10 Mrad, and neutrons, up to 10 ''14 cm''-2, two different type of sensors and measured their change in performance. (Author) 10 refs

Development of n+-in-p large-area silicon microstrip sensors for very high radiation environments – ATLAS12 design and initial results

International Nuclear Information System (INIS)

Unno, Y.; Edwards, S.O.; Pyatt, S.; Thomas, J.P.; Wilson, J.A.; Kierstead, J.; Lynn, D.; Carter, J.R.; Hommels, L.B.A.; Robinson, D.; Bloch, I.; Gregor, I.M.; Tackmann, K.; Betancourt, C.; Jakobs, K.; Kuehn, S.; Mori, R.; Parzefall, U.; Wiik-Fucks, L.; Clark, A.

2014-01-01

We have been developing a novel radiation-tolerant n + -in-p silicon microstrip sensor for very high radiation environments, aiming for application in the high luminosity large hadron collider. The sensors are fabricated in 6 in., p-type, float-zone wafers, where large-area strip sensor designs are laid out together with a number of miniature sensors. Radiation tolerance has been studied with ATLAS07 sensors and with independent structures. The ATLAS07 design was developed into new ATLAS12 designs. The ATLAS12A large-area sensor is made towards an axial strip sensor and the ATLAS12M towards a stereo strip sensor. New features to the ATLAS12 sensors are two dicing lines: standard edge space of 910 μm and slim edge space of 450 μm, a gated punch-through protection structure, and connection of orphan strips in a triangular corner of stereo strips. We report the design of the ATLAS12 layouts and initial measurements of the leakage current after dicing and the resistivity of the wafers

Comparison of proton microbeam and gamma irradiation for the radiation hardness testing of silicon PIN diodes

Science.gov (United States)

Jakšić, M.; Grilj, V.; Skukan, N.; Majer, M.; Jung, H. K.; Kim, J. Y.; Lee, N. H.

2013-09-01

Simple and cost-effective solutions using Si PIN diodes as detectors are presently utilized in various radiation-related applications in which excessive exposure to radiation degrades their charge transport properties. One of the conventional methods for the radiation hardness testing of such devices is time-consuming irradiation with electron beam or gamma-ray irradiation facilities, high-energy proton accelerators, or with neutrons from research reactors. Recently, for the purpose of radiation hardness testing, a much faster nuclear microprobe based approach utilizing proton irradiation has been developed. To compare the two different irradiation techniques, silicon PIN diodes have been irradiated with a Co-60 gamma radiation source and with a 6 MeV proton microbeam. The signal degradation in the silicon PIN diodes for both irradiation conditions has been probed by the IBIC (ion beam induced charge) technique, which can precisely monitor changes in charge collection efficiency. The results presented are reviewed on the basis of displacement damage calculations and NIEL (non-ionizing energy loss) concept.

3D, Flash, Induced Current Readout for Silicon Sensors

Energy Technology Data Exchange (ETDEWEB)

Parker, Sherwood I. [Univ. of Hawaii, Honolulu, HI (United States)

2014-06-07

A new method for silicon microstrip and pixel detector readout using (1) 65 nm-technology current amplifers which can, for the first time with silicon microstrop and pixel detectors, have response times far shorter than the charge collection time (2) 3D trench electrodes large enough to subtend a reasonable solid angle at most track locations and so have adequate sensitivity over a substantial volume of pixel, (3) induced signals in addition to, or in place of, collected charge

Radiation Damage in Silicon Detectors Caused by Hadronic and Electromagnetic Irradiation

CERN Document Server

Fretwurst, E.; Stahl, J.; Pintilie, I.

2002-01-01

The report contains various aspects of radiation damage in silicon detectors subjected to high intensity hadron and electromagnetic irradiation. It focuses on improvements for the foreseen LHC applications, employing oxygenation of silicon wafers during detector processing (result from CERN-RD48). An updated survey on hadron induced damage is given in the first article. Several improvements are outlined especially with respect to antiannealing problems associated with detector storage during LHC maintenance periods. Open questions are outlined in the final section, among which are a full understanding of differences found between proton and neutron induced damage, process related effects changing the radiation tolerance in addition to the oxygen content and the lack of understanding the changed detector properties on the basis of damage induced point and cluster defects. In addition to float zone silicon, so far entirely used for detector fabrication,Czochralski silicon was also studied and first promising re...

Testbeam evaluation of silicon strip modules for ATLAS Phase - II Strip Tracker Upgrade

CERN Document Server

Blue, Andrew; The ATLAS collaboration; Ai, Xiaocong; Allport, Phillip; Arling, Jan-Hendrik; Atkin, Ryan Justin; Bruni, Lucrezia Stella; Carli, Ina; Casse, Gianluigi; Chen, Liejian; Chisholm, Andrew; Cormier, Kyle James Read; Cunningham, William Reilly; Dervan, Paul; Diez Cornell, Sergio; Dolezal, Zdenek; Dopke, Jens; Dreyer, Etienne; Dreyling-Eschweiler, Jan Linus Roderik; Escobar, Carlos; Fabiani, Veronica; Fadeyev, Vitaliy; Fernandez Tejero, Javier; Fleta Corral, Maria Celeste; Gallop, Bruce; Garcia-Argos, Carlos; Greenall, Ashley; Gregor, Ingrid-Maria; Greig, Graham George; Guescini, Francesco; Hara, Kazuhiko; Hauser, Marc Manuel; Huang, Yanping; Hunter, Robert Francis Holub; Keller, John; Klein, Christoph; Kodys, Peter; Koffas, Thomas; Kotek, Zdenek; Kroll, Jiri; Kuehn, Susanne; Lee, Steven Juhyung; Liu, Yi; Lohwasser, Kristin; Meszarosova, Lucia; Mikestikova, Marcela; Mi\\~nano Moya, Mercedes; Mori, Riccardo; Moser, Brian; Nikolopoulos, Konstantinos; Peschke, Richard; Pezzullo, Giuseppe; Phillips, Peter William; Poley, Anne-luise; Queitsch-Maitland, Michaela; Ravotti, Federico; Rodriguez Rodriguez, Daniel

2018-01-01

The planned HL-LHC (High Luminosity LHC) is being designed to maximise the physics potential of the LHC with 10 years of operation at instantaneous luminosities of \\mbox{$7.5\\times10^{34}\\;\\mathrm{cm}^{-2}\\mathrm{s}^{-1}$}. A consequence of this increased luminosity is the expected radiation damage requiring the tracking detectors to withstand hadron equivalences to over $1x10^{15}$ 1 MeV neutron equivalent per $cm^{2}$ in the ATLAS Strips system. The silicon strip tracker exploits the concept of modularity. Fast readout electronics, deploying 130nm CMOS front-end electronics are glued on top of a silicon sensor to make a module. The radiation hard n-in-p micro-strip sensors used have been developed by the ATLAS ITk Strip Sensor collaboration and produced by Hamamatsu Photonics. A series of tests were performed at the DESY-II test beam facility to investigate the detailed performance of a strip module with both 2.5cm and 5cm length strips before irradiation. The DURANTA telescope was used to obtain a pointing...

Microstrip natural wave spectrum mathematical model using partial inversion method

International Nuclear Information System (INIS)

Pogarsky, S.A.; Litvinenko, L.N.; Prosvirnin, S.L.

1995-01-01

It is generally agreed that both microstrip lines itself and different discontinuities based on microstrips are the most difficult problem for accurate electrodynamic analysis. Over the last years much has been published about principles and accurate (or full wave) methods of microstrip lines investigations. The growing interest for this problem may be explained by the microstrip application in the millimeter-wave range for purpose of realizing interconnects and a variety of passive components. At these higher operating rating frequencies accurate component modeling becomes more critical. A creation, examination and experimental verification of the accurate method for planar electrodynamical structures natural wave spectrum investigations are the objects of this manuscript. The moment method with partial inversion operator method using may be considered as a basical way for solving this problem. This method is outlook for accurate analysis of different planar discontinuities in microstrip: such as step discontinuities, microstrip turns, Y- and X-junctions and etc., substrate space steps dielectric constants and other anisotropy types

Prototype Si microstrip sensors for the CDF-II ISL detector

CERN Document Server

Hara, K; Kanao, K; Kim, S; Ogasawara, M; Ohsugi, T; Shimojima, M; Takikawa, K

1999-01-01

Prototype Si microstrip sensors for the CDF-II ISL were fabricated by Hamamatsu Photonics and SEIKO Instruments using 4'' technology. The sensor is AC coupled and double-sided forming a stereo angle of 1.207 degree sign . The strip pitch is 112 mu m on both sides. The main differences between the two manufacturers lie on the technologies of passivation and the structure of coupling capacitors. We describe the design of the sensor and evaluation results of the performance. The evaluations include the total and individual strip currents and interstrip capacitance measured before and after sup 6 sup 0 Co gamma irradiation. (author)

ATLAS Silicon Microstrip Tracker Operation and Performance

CERN Document Server

Nagai, K; The ATLAS collaboration

2012-01-01

The Semi-Conductor Tracker (SCT) is one of the key precision tracking devices in the ATLAS experiment at CERN Large Hadron Collider (LHC). The SCT was constructed of 4088 modules for a total of 6.3 million silicon strips and was installed into the ATLAS experiment in 2007. The SCT has been fully operational since then, and achieves a good tracking performance from the startup of the LHC operation.

A 1024 pad silicon detector to solve tracking ambiguities in high multiplicity events

International Nuclear Information System (INIS)

Simone, S.; Catanesi, M.G.; Di Bari, D.; Didonna, V.; Elia, D.; Ghidini, B.; Lenti, V.; Manzari, V.; Nappi, E.

1996-01-01

Silicon detectors with two-dimensional pad readout have been designed and constructed for the WA97 experiment at CERN, in order to solve ambiguities for track reconstruction in a silicon microstrip telescope. A high density fanouts has been developed on a glass support to allow the electrical contacts between the detector and the front end electronics. Silicon pad detectors have been successfully operated both during the proton-Pb and Pb-Pb runs of the WA97 experiment. (orig.)

Undepleted silicon detectors

International Nuclear Information System (INIS)

Rancoita, P.G.; Seidman, A.

1985-01-01

Large-size silicon detectors employing relatively low resistivity material can be used in electromagnetic calorimetry. They can operate in strong magnetic fields, under geometric constraints and with microstrip detectors a high resolution can be achieved. Low noise large capacitance oriented electronics was developed to enable good signal-to-noise ratio for single relativistic particles traversing large area detectors. In undepleted silicon detectors, the charge migration from the field-free region has been investigated by comparing the expected peak position (from the depleted layer only) of the energy-loss of relativistic electrons with the measured one. Furthermore, the undepleted detectors have been employed in a prototype of Si/W electromagnetic colorimeter. The sensitive layer was found to be systematically larger than the depleted one

Silicon micropattern detector: a dream

Energy Technology Data Exchange (ETDEWEB)

Heijne, E H.M.; Jarron, P; Olsen, A; Redaelli, N

1988-12-15

The present use of silicon microstrip detectors in elementary particle physics experiments is described and future needs are evaluated. Possibilities and problems to be encountered in the development of a true two-dimensional detector with intelligent data collection are discussed. This paper serves as an introduction to various other contributions to the conference proceedings, either dealing with futuristic device designs or with cautious steps on the road of technology development.

Performance of silicon pad detectors after mixed irradiations with neutrons and fast charged hadrons

Energy Technology Data Exchange (ETDEWEB)

Kramberger, G. [Jozef Stefan Institute, Department of Physics, University of Ljubljana, Jamova 39, SI-1000 Ljubljana (Slovenia)], E-mail: Gregor.Kramberger@ijs.si; Cindro, V.; Dolenc, I.; Mandic, I.; Mikuz, M.; Zavrtanik, M. [Jozef Stefan Institute, Department of Physics, University of Ljubljana, Jamova 39, SI-1000 Ljubljana (Slovenia)

2009-10-11

A large set of silicon pad detectors produced on MCz and FZ wafer of p- and n-type was irradiated in two steps, first by fast charged hadrons followed by reactor neutrons. In this way the irradiations resemble the real irradiation fields at LHC. After irradiations controlled annealing started in steps during which the evolution of full depletion voltage, leakage current and charge collection efficiency was monitored. The damage introduced by different irradiation particles was found to be additive. The most striking consequence of that is a decrease of the full depletion voltage for n-type MCz detectors after additional neutron irradiation. This confirms that effective donors introduced by charged hadron irradiation are compensated by acceptors from neutron irradiation.

Performance of silicon pad detectors after mixed irradiations with neutrons and fast charged hadrons

International Nuclear Information System (INIS)

Kramberger, G.; Cindro, V.; Dolenc, I.; Mandic, I.; Mikuz, M.; Zavrtanik, M.

2009-01-01

A large set of silicon pad detectors produced on MCz and FZ wafer of p- and n-type was irradiated in two steps, first by fast charged hadrons followed by reactor neutrons. In this way the irradiations resemble the real irradiation fields at LHC. After irradiations controlled annealing started in steps during which the evolution of full depletion voltage, leakage current and charge collection efficiency was monitored. The damage introduced by different irradiation particles was found to be additive. The most striking consequence of that is a decrease of the full depletion voltage for n-type MCz detectors after additional neutron irradiation. This confirms that effective donors introduced by charged hadron irradiation are compensated by acceptors from neutron irradiation.

Hybrid Design, Procurement and Testing for the LHCb Silicon Tracker

CERN Document Server

Bay, A; Frei, R; Jiménez-Otero, S; Perrin, A; Tran, MT; Van Hunen, J J; Vervink, K; Vollhardt, A; Agari, M; Bauer, C; Blouw, J; Hofmann, W; Knöpfle, K T; Löchner, S; Schmelling, M; Schwingenheuer, B; Smale, N J; Adeva, B; Esperante-Pereira, D; Lois, C; Vázquez, P; Lehner, F; Bernhard, R P; Bernet, R; Gassner, J; Köstner, S; Needham, M; Steinkamp, O; Straumann, U; Volyanskyy, D; Voss, H; Wenger, A

2005-01-01

The Silicon Tracker of the LHCb experiment consists of four silicon detector stations positioned along the beam line of the experiment. The detector modules of each station are constructed from wide pitch silicon microstrip sensors. Located at the module's end, a polyimide hybrid is housing the front-end electronics. The assembly of the more than 600 hybrids has been outsourced to industry. We will report on the design and production status of the hybrids for the LHCb Silicon Tracker and describe the quality assurance tests. Particular emphasis is laid on the vendor qualifying and its impact on our hybrid design that we experienced during the prototyping phase.

Ultra-compact microwave filters using kinetic inductance microstrip

International Nuclear Information System (INIS)

Pond, J.M.; Carroll, K.R.; Cukauskas, E.J.

1991-01-01

This paper reports on multi-pole microwave filters designed and fabricated using microstrip transmission line sections which consist of two very thin films of sputtered niobium nitride (NbN) separated by another very thin film of sputtered Si. Since the thicknesses of all three films are much less than the superconducting penetration depth, the kinetic inductance is significantly greater than the magnetic inductance. As a result, the phase velocity of a microstrip transmission line is much less than the free space speed of light. Since resonant structures are reduced in size proportionately, the size and weight of microstrip circuits can be greatly reduced. Prototype filters consisting of four open circuit half-wavelength microstrip stubs separated by full-wavelength microstrip sections have been measured. The circuits are connected to 34 mil diameter coaxial cable via an intermediate coplanar waveguide section. Passbands of 4 GHz separated by 3 GHz reject bands have been measured in a structure which occupies less than 0.5 cm 2 including the coplanar waveguide transitions. Higher-order passbands, although possessing an increased insertion loss, maintain filter passband characteristics through 20.0 GHz

Performance of irradiated CVD diamond micro-strip sensors

International Nuclear Information System (INIS)

Adam, W.; Berdermann, E.; Bergonzo, P.; Bertuccio, G.; Bogani, F.; Borchi, E.; Brambilla, A.; Bruzzi, M.; Colledani, C.; Conway, J.; D'Angelo, P.; Dabrowski, W.; Delpierre, P.; Deneuville, A.; Dulinski, W.; Eijk, B. van; Fallou, A.; Fizzotti, F.; Foulon, F.; Friedl, M.; Gan, K.K.; Gheeraert, E.; Hallewell, G.; Han, S.; Hartjes, F.; Hrubec, J.; Husson, D.; Kagan, H.; Kania, D.; Kaplon, J.; Kass, R.; Koeth, T.; Krammer, M.; Logiudice, A.; Lu, R.; Mac Lynne, L.; Manfredotti, C.; Meier, D.; Mishina, M.; Moroni, L.; Noomen, J.; Oh, A.; Pan, L.S.; Pernicka, M.; Peitz, A.; Perera, L.; Pirollo, S.; Procario, M.; Riester, J.L.; Roe, S.; Rousseau, L.; Rudge, A.; Russ, J.; Sala, S.; Sampietro, M.; Schnetzer, S.; Sciortino, S.; Stelzer, H.; Stone, R.; Suter, B.; Tapper, R.J.; Tesarek, R.; Trischuk, W.; Tromson, D.; Vittone, E.; Walsh, A.M.; Wedenig, R.; Weilhammer, P.; Wetstein, M.; White, C.; Zeuner, W.; Zoeller, M.; Plano, R.; Somalwar, S.V.; Thomson, G.B.

2002-01-01

CVD diamond detectors are of interest for charged particle detection and tracking due to their high radiation tolerance. In this article, we present, for the first time, beam test results from recently manufactured CVD diamond strip detectors and their behavior under low doses of electrons from a β-source and the performance before and after intense (>10 15 /cm 2 ) proton- and pion-irradiations. We find that low dose irradiation increase the signal-to-noise ratio (pumping of the signal) and slightly deteriorate the spatial resolution. Intense irradiation with protons 2.2x10 15 p/cm 2 lowers the signal-to-noise ratio slightly. Intense irradiation with pions 2.9x10 15 π/cm 2 lowers the signal-to-noise ratio more. The spatial resolution of the diamond sensors improves after irradiations

Performance of irradiated CVD diamond micro-strip sensors

Science.gov (United States)

Adam, W.; Berdermann, E.; Bergonzo, P.; Bertuccio, G.; Bogani, F.; Borchi, E.; Brambilla, A.; Bruzzi, M.; Colledani, C.; Conway, J.; D'Angelo, P.; Dabrowski, W.; Delpierre, P.; Deneuville, A.; Dulinski, W.; van Eijk, B.; Fallou, A.; Fizzotti, F.; Foulon, F.; Friedl, M.; Gan, K. K.; Gheeraert, E.; Hallewell, G.; Han, S.; Hartjes, F.; Hrubec, J.; Husson, D.; Kagan, H.; Kania, D.; Kaplon, J.; Kass, R.; Koeth, T.; Krammer, M.; Logiudice, A.; Lu, R.; mac Lynne, L.; Manfredotti, C.; Meier, D.; Mishina, M.; Moroni, L.; Noomen, J.; Oh, A.; Pan, L. S.; Pernicka, M.; Peitz, A.; Perera, L.; Pirollo, S.; Procario, M.; Riester, J. L.; Roe, S.; Rousseau, L.; Rudge, A.; Russ, J.; Sala, S.; Sampietro, M.; Schnetzer, S.; Sciortino, S.; Stelzer, H.; Stone, R.; Suter, B.; Tapper, R. J.; Tesarek, R.; Trischuk, W.; Tromson, D.; Vittone, E.; Walsh, A. M.; Wedenig, R.; Weilhammer, P.; Wetstein, M.; White, C.; Zeuner, W.; Zoeller, M.; Plano, R.; Somalwar, S. V.; Thomson, G. B.

2002-01-01

CVD diamond detectors are of interest for charged particle detection and tracking due to their high radiation tolerance. In this article, we present, for the first time, beam test results from recently manufactured CVD diamond strip detectors and their behavior under low doses of electrons from a β-source and the performance before and after intense (>10 15/cm 2) proton- and pion-irradiations. We find that low dose irradiation increase the signal-to-noise ratio (pumping of the signal) and slightly deteriorate the spatial resolution. Intense irradiation with protons 2.2×10 15 p/ cm2 lowers the signal-to-noise ratio slightly. Intense irradiation with pions 2.9×10 15 π/ cm2 lowers the signal-to-noise ratio more. The spatial resolution of the diamond sensors improves after irradiations.

Mass transfer in silicon at deposition of Ti thin films assisted by self ion irradiation

International Nuclear Information System (INIS)

Mikhalkovich, O.M.; Tashlykov, I.S.; Gusakov, V.E.

2011-01-01

In this paper a composite structure, processes of diffusion in Si, modified by means of ion-assisted deposition of coatings in conditions of a self-irradiation are discussed. Rutherford backscattering in combination with a channelling (RBS/Ch) of He + ions and computer program RUMP were applied to investigate an element composition. It is established, that coatings include atoms of metal, hydrogen, carbon, oxygen, silicon. The interstitial Si atoms, generated by radiation effect, diffuse during deposition of thin coating, both in a depth of a wafers, and in coatings. The influence of irradiation of ions Xe+ on diffusion processes in silicon are revealed. (authors)

Annealing effects on resistivity and Hall coefficient of neutron irradiated silicon

International Nuclear Information System (INIS)

Biggeri, U.

1995-01-01

High Temperature Annealing (HTA) treatment has been carried out on fast-neutron irradiated silicon samples with temperatures up to 300 C. Fluences of irradiation up to 1x10 14 n/cm 2 were used. Before annealing, samples irradiated with fluences higher than 1x10 13 n/cm 2 suffered the type conductivity inversion from n-type to p-type. The changes in the resisitivity and Hall coefficient during each annealing step have been measured by Hall effect analysis. Results indicate the possible creation of acceptors for low temperature annealing up to 150 C and the phosphorous release by E centres at annealing temperatures among 150 C and 200 C. Heating samples up to 300 C allows the recovering of the sample resistivity to its value before irradiation, with the peculiarity that bulks inverted to p-type after irradiation does not come back to n-type after annealing. (orig.)

Performance of irradiated CVD diamond micro-strip sensors

Energy Technology Data Exchange (ETDEWEB)

Adam, W.; Berdermann, E.; Bergonzo, P.; Bertuccio, G.; Bogani, F.; Borchi, E.; Brambilla, A.; Bruzzi, M.; Colledani, C.; Conway, J.; D' Angelo, P.; Dabrowski, W.; Delpierre, P.; Deneuville, A.; Dulinski, W.; Eijk, B. van; Fallou, A.; Fizzotti, F.; Foulon, F.; Friedl, M.; Gan, K.K.; Gheeraert, E.; Hallewell, G.; Han, S.; Hartjes, F.; Hrubec, J.; Husson, D.; Kagan, H.; Kania, D.; Kaplon, J.; Kass, R.; Koeth, T.; Krammer, M.; Logiudice, A.; Lu, R.; Mac Lynne, L.; Manfredotti, C.; Meier, D. E-mail: dirk.meier@cern.ch; Mishina, M.; Moroni, L.; Noomen, J.; Oh, A.; Pan, L.S.; Pernicka, M.; Peitz, A.; Perera, L.; Pirollo, S.; Procario, M.; Riester, J.L.; Roe, S.; Rousseau, L.; Rudge, A.; Russ, J.; Sala, S.; Sampietro, M.; Schnetzer, S.; Sciortino, S.; Stelzer, H.; Stone, R.; Suter, B.; Tapper, R.J.; Tesarek, R.; Trischuk, W.; Tromson, D.; Vittone, E.; Walsh, A.M.; Wedenig, R.; Weilhammer, P.; Wetstein, M.; White, C.; Zeuner, W.; Zoeller, M.; Plano, R.; Somalwar, S.V.; Thomson, G.B

2002-01-11

CVD diamond detectors are of interest for charged particle detection and tracking due to their high radiation tolerance. In this article, we present, for the first time, beam test results from recently manufactured CVD diamond strip detectors and their behavior under low doses of electrons from a {beta}-source and the performance before and after intense (>10{sup 15}/cm{sup 2}) proton- and pion-irradiations. We find that low dose irradiation increase the signal-to-noise ratio (pumping of the signal) and slightly deteriorate the spatial resolution. Intense irradiation with protons 2.2x10{sup 15} p/cm{sup 2} lowers the signal-to-noise ratio slightly. Intense irradiation with pions 2.9x10{sup 15} {pi}/cm{sup 2} lowers the signal-to-noise ratio more. The spatial resolution of the diamond sensors improves after irradiations.

Performance of irradiated CVD diamond micro-strip sensors

CERN Document Server

Adam, W; Bergonzo, P; Bertuccio, G; Bogani, F; Borchi, E; Brambilla, A; Bruzzi, Mara; Colledani, C; Conway, J; D'Angelo, P; Dabrowski, W; Delpierre, P A; Deneuville, A; Dulinski, W; van Eijk, B; Fallou, A; Fizzotti, F; Foulon, F; Friedl, M; Gan, K K; Gheeraert, E; Hallewell, G D; Han, S; Hartjes, F G; Hrubec, Josef; Husson, D; Kagan, H; Kania, D R; Kaplon, J; Kass, R; Koeth, T W; Krammer, Manfred; Lo Giudice, A; Lü, R; MacLynne, L; Manfredotti, C; Meier, D; Mishina, M; Moroni, L; Noomen, J; Oh, A; Pan, L S; Pernicka, Manfred; Peitz, A; Perera, L P; Pirollo, S; Procario, M; Riester, J L; Roe, S; Rousseau, L; Rudge, A; Russ, J; Sala, S; Sampietro, M; Schnetzer, S R; Sciortino, S; Stelzer, H; Stone, R; Suter, B; Tapper, R J; Tesarek, R J; Trischuk, W; Tromson, D; Vittone, E; Walsh, A M; Wedenig, R; Weilhammer, Peter; Wetstein, M; White, C; Zeuner, W; Zöller, M

2002-01-01

CVD diamond detectors are of interest for charged particle detection and tracking due to their high radiation tolerance. In this article we present, for the first time, beam test results from recently manufactured CVD diamond strip detectors and their behavior under low doses of electrons from a $\\beta$-source and the performance before and after intense ($>10^{15}/{\\rm cm^2}$) proton- and pion-irradiations. We find that low dose irradiations increase the signal-to-noise ratio (pumping of the signal) and slightly deteriorate the spatial resolution. Intense irradiations with protons ($2.2\\times 10^{15}~p/{\\rm cm^2}$) lowers the signal-to-noise ratio slightly. Intense irradiation with pions ($2.9\\times 10^{15}~\\pi/{\\rm cm^2}$) lowers the signal-to-noise ratio more. The spatial resolution of the diamond sensors improves after irradiations.

2D position sensitive microstrip sensors with charge division along the strip Studies on the position measurement error

CERN Document Server

Bassignana, D; Fernandez, M; Jaramillo, R; Lozano, M; Munoz, F.J; Pellegrini, G; Quirion, D; Vila, I; Vitorero, F

2013-01-01

Position sensitivity in semiconductor detectors of ionizing radiation is usually achieved by the segmentation of the sensing diode junction in many small sensing elements read out separately as in the case of conventional microstrips and pixel detectors. Alternatively, position sensitivity can be obtained by splitting the ionization signal collected by one single electrode amongst more than one readout channel with the ratio of the collected charges depending on the position where the signal was primary generated. Following this later approach, we implemented the charge division method in a conventional microstrip detector to obtain position sensitivity along the strip. We manufactured a proofof-concept demonstrator where the conventional aluminum electrodes were replaced by slightly resistive electrodes made of strongly doped poly-crystalline silicon and being readout at both strip ends. Here, we partially summarize the laser characterization of this first proof-of-concept demonstrator with special emphasis ...

The assembly of the silicon tracker for the GLAST beam test engineering model

International Nuclear Information System (INIS)

Allport, P.; Atwood, E.; Atwood, W.; Beck, G.; Bhatnager, B.; Bloom, E.; Broeder, J.; Chen, V.; Clark, J.; Cotton, N.; Couto e Silva, E. do; Feerick, B.; Giebels, G.; Godfrey, G.; Handa, T.; Hernando, J.A.; Hirayama, M.; Johnson, R.P.; Kamae, T.; Kashiguine, S.; Kroeger, W.; Milbury, C.; Miller, W.; Millican, O.; Nikolaou, M.; Nordby, M.; Ohsugi, T.; Paliaga, G.; Ponslet, E.; Rowe, W.; Sadrozinski, H.F.-W.; Spencer, E.; Stromberg, S.; Swensen, E.; Takayuki, M.; Tournear, D.; Webster, A.; Winkler, G.; Yamamoto, K.; Yamamura, K.; Yoshida, S.

2001-01-01

The silicon tracker for the engineering model of the GLAST Large Area Telescope (LAT) to date represents the largest surface of silicon microstrip detectors assembled in a tracker (2.7 m 2 ). It demonstrates the feasibility of employing this technology for satellite based experiments, in which large effective areas and high reliability are required. This note gives an overview of the assembly of this silicon tracker and discusses in detail studies performed to track quality assurance: leakage current, mechanical alignment and production yields

Scanning of irradiated silicon detectors using $\\alpha$ particles and low energy protons

CERN Document Server

Casse, G L; Glaser, M; Kohout, Z; Konícek, J; Lemeilleur, F; Leroy, C; Linhart, V; Mares, J J; Pospísil, S; Roy, P; Sopko, B; Sinor, M; Svejda, J; Vorobel, V; Wilhelm, I

1999-01-01

In a spectroscopic study of non-irradiated and proton-irradiated silicon diodes, the detectors were illuminated from the front side and from the rear side by various alpha particle sources (mainly ThC') and by monoenergetic protons with energies from 1.0 to 2.5~MeV. Their response characteristics have been studied as a function of the incoming particle energy and the applied bias voltage. The charge collection efficiency was determined as a function of fluence

Tuning the conductivity of vanadium dioxide films on silicon by swift heavy ion irradiation

Directory of Open Access Journals (Sweden)

H. Hofsäss

2011-09-01

Full Text Available We demonstrate the generation of a persistent conductivity increase in vanadium dioxide thin films grown on single crystal silicon by irradiation with 1 GeV 238U swift heavy ions at room temperature. VO2 undergoes a temperature driven metal-insulator-transition (MIT at 67 °C. After room temperature ion irradiation with high electronic energy loss of 50 keV/nm the conductivity of the films below the transition temperature is strongly increased proportional to the ion fluence of 5·109 U/cm2 and 1·1010 U/cm2. At high temperatures the conductivity decreases slightly. The ion irradiation slightly reduces the MIT temperature. This observed conductivity change is persistent and remains after heating the samples above the transition temperature and subsequent cooling. Low temperature measurements down to 15 K show no further MIT below room temperature. Although the conductivity increase after irradiation at such low fluences is due to single ion track effects, atomic force microscopy (AFM measurements do not show surface hillocks, which are characteristic for ion tracks in other materials. Conductive AFM gives no evidence for conducting ion tracks but rather suggests the existence of conducting regions around poorly conducting ion tracks, possible due to stress generation. Another explanation of the persistent conductivity change could be the ion-induced modification of a high resistivity interface layer formed during film growth between the vanadium dioxide film and the n-Silicon substrate. The swift heavy ions may generate conducting filaments through this layer, thus increasing the effective contact area. Swift heavy ion irradiation can thus be used to tune the conductivity of VO2 films on silicon substrates.

Beam tests of ATLAS SCT silicon strip detector modules

Czech Academy of Sciences Publication Activity Database

Campabadal, F.; Fleta, C.; Key, M.; Böhm, Jan; Mikeštíková, Marcela; Šťastný, Jan

2005-01-01

Roč. 538, - (2005), s. 384-407 ISSN 0168-9002 R&D Projects: GA MŠk(CZ) 1P04LA212 Institutional research plan: CEZ:AV0Z10100502 Keywords : ATLAS * silicon * micro-strip * beam * test Subject RIV: BF - Elementary Particles and High Energy Physics Impact factor: 1.224, year: 2005

Thermally stimulated current method applied to highly irradiated silicon diodes

CERN Document Server

Pintilie, I; Pintilie, I; Moll, Michael; Fretwurst, E; Lindström, G

2002-01-01

We propose an improved method for the analysis of Thermally Stimulated Currents (TSC) measured on highly irradiated silicon diodes. The proposed TSC formula for the evaluation of a set of TSC spectra obtained with different reverse biases leads not only to the concentration of electron and hole traps visible in the spectra but also gives an estimation for the concentration of defects which not give rise to a peak in the 30-220 K TSC temperature range (very shallow or very deep levels). The method is applied to a diode irradiated with a neutron fluence of phi sub n =1.82x10 sup 1 sup 3 n/cm sup 2.

Enhanced electrochemical etching of ion irradiated silicon by localized amorphization

Energy Technology Data Exchange (ETDEWEB)

Dang, Z. Y.; Breese, M. B. H. [Centre for Ion Beam Applications (CIBA), Department of Physics, National University of Singapore Singapore 117542 (Singapore); Lin, Y.; Tok, E. S. [Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117542 (Singapore); Vittone, E. [Physics Department, NIS Excellence Centre and CNISM, University of Torino, via Pietro Giuria 1, 10125 Torino (Italy)

2014-05-12

A tailored distribution of ion induced defects in p-type silicon allows subsequent electrochemical anodization to be modified in various ways. Here we describe how a low level of lattice amorphization induced by ion irradiation influences anodization. First, it superposes a chemical etching effect, which is observable at high fluences as a reduced height of a micromachined component. Second, at lower fluences, it greatly enhances electrochemical anodization by allowing a hole diffusion current to flow to the exposed surface. We present an anodization model, which explains all observed effects produced by light ions such as helium and heavy ions such as cesium over a wide range of fluences and irradiation geometries.

Systematic irradiation studies and quality assurance of silicon strip sensors for the CBM Silicon Tracking System

International Nuclear Information System (INIS)

Larionov, Pavel

2016-10-01

The Compressed Baryonic Matter (CBM) experiment at the upcoming Facility for Antiproton and Ion Research (FAIR) is designed to investigate the phase diagram of strongly interacting matter at neutron star core densities under laboratory conditions. This work is a contribution to the development of the main tracking detector of the CBM experiment - the Silicon Tracking System (STS), designed to provide the tracking and the momentum information for charged particles in a high multiplicity environment. The STS will be composed of about 900 highly segmented double-sided silicon strip sensors and is expected to face a harsh radiation environment up to 1 x 10 14 cm -2 in 1 MeV neutron equivalent fluence after several years of operation. The two most limiting factors of the successful operation of the system are the radiation damage and the quality of produced silicon sensors. It is therefore of importance to ensure both the radiation tolerance of the STS sensors and their quality during the production phase. The first part of this work details the investigation of the radiation tolerance of the STS sensors. Series of irradiations of miniature sensors as well as full-size prototype sensors were performed with reactor neutrons and 23 MeV protons to a broad range of fluences, up to 2 x 10 14 n eq /cm 2 . The evolution of the main sensor characteristics (leakage current, full depletion voltage and charge collection) was extensively studied both as a function of accumulated fluence and time after irradiation. In particular, charge collection measurements of miniature sensors demonstrated the ability of the sensors to yield approx. 90% to 95% of the signal after irradiation up to the lifetime fluence, depending on the readout side. First results on the charge collection performance of irradiated full-size prototype sensors have been obtained, serving as an input data for further final signal-to-noise evaluation in the whole readout chain. Operational stability of these

Investigations of structural, dielectric and optical properties on silicon ion irradiated glycine monophosphate single crystals

Energy Technology Data Exchange (ETDEWEB)

Kanagasekaran, T. [Department of Physics, Anna University, Chennai 600 025 (India); Department of Physics and Astrophysics, University of Delhi, New Delhi 110 007 (India); Mythili, P. [Department of Physics, Anna University, Chennai 600 025 (India); Bhagavannarayana, G. [Materials Characterization Division, National Physical Laboratory, New Delhi 110012 (India); Kanjilal, D. [Inter University Accelerator Centre, New Delhi 110 067 (India); Gopalakrishnan, R. [Department of Physics, Anna University, Chennai 600 025 (India)], E-mail: krgkrishnan@annauniv.edu

2009-08-01

The 50 MeV silicon ion irradiation induced modifications on structural, optical and dielectric properties of solution grown glycine monophosphate (GMP) crystals were studied. The high-resolution X-ray diffraction study shows the unaltered value of integrated intensity on irradiation. The dielectric constant as a function of frequency and temperature was studied. UV-visible studies reveal the decrease in bandgap values on irradiation and presence of F-centers. The fluorescence spectrum shows the existence of some energy levels, which remains unaffected after irradiation. The scanning electron micrographs reveal the defects formed on irradiation.

FILTRES: a 128 channels VLSI mixed front-end readout electronic development for microstrip detectors

International Nuclear Information System (INIS)

Anstotz, F.; Hu, Y.; Michel, J.; Sohler, J.L.; Lachartre, D.

1998-01-01

We present a VLSI digital-analog readout electronic chain for silicon microstrip detectors. The characteristics of this circuit have been optimized for the high resolution tracker of the CERN CMS experiment. This chip consists of 128 channels at 50 μm pitch. Each channel is composed by a charge amplifier, a CR-RC shaper, an analog memory, an analog processor, an output FIFO read out serially by a multiplexer. This chip has been processed in the radiation hard technology DMILL. This paper describes the architecture of the circuit and presents test results of the 128 channel full chain chip. (orig.)

Test-Beam Results on <100> Silicon Prototype Detectors with APV6 Front-End Chip Readout

CERN Document Server

Winkler, Matthias

2000-01-01

Results are presented using data collected during the X5 test-beam performed in August 1999. To achieve a good estimate of signal and noise values, the raw data are processed off-line by a dedicated reconstruction program. In particular, an efficient algorithm for pedestal, noise and common mode calculation was developed and tested. The intrinsic performances of an AC-coupled CMS silicon micro-strip multi-geometry prototype detector, with a <100> crystal orientation and a low resistivity ( 1~k Omega cm), are investigated. This detector was exposed to an irradiation fluence of 3 imes10^{14} p/cm ^2 , equivalent to 10 years of operation at LHC. The signal-to-noise ratio and the ghost rates per strip and per cm ^2 are presented, as a function of the bias voltage.

Study of irradiation induced defects in silicon

International Nuclear Information System (INIS)

Pal, Gayatri; Sebastian, K.C.; Somayajulu, D.R.S.; Chintalapudi, S.N.

2000-01-01

Pure high resistivity (6000 ohm-cm) silicon wafers were recoil implanted with 1.8 MeV 111 In ions. As-irradiated wafers showed a 13 MHz quadrupole interaction frequency, which was not observed earlier. The annealing behaviour of these defects in the implanted wafers was studied between room temperature and 1073 K. At different annealing temperatures two more interaction frequencies corresponding to defect complexes D2 and D3 are observed. Even though the experimental conditions were different, these are identical to the earlier reported ones. Based on an empirical point charge model calculation, an attempt is made to identify the configuration of these defect complexes. (author)

The study of 1 MeV electron irradiation induced defects in N-type and P-type monocrystalline silicon

Science.gov (United States)

Babaee, S.; Ghozati, S. B.

2017-12-01

Despite extensive use of GaAs cells in space, silicon cells are still being used. The reason is that not only they provide a good compromise between efficiency and cost, but also some countries do not have the required technology for manufacturing GaAs. Behavior of a silicon cell under any levels of charged particle irradiation could be deducted from the results of a damage equivalent 1 MeV electron irradiation using the NASA EQflux open source software package. In this paper for the first time, we have studied the behavior of a silicon cell before and after 1 MeV electron irradiation with 1014, 1015 and 1016 electrons-cm-2 fluences, using SILVACO TCAD simulation software package. Simulation was carried out at room temperature under AM0 condition. Results reveal that open circuit voltage and efficiency decrease after irradiation while short circuit current shows a slight increase in the trend around 5 × 1016 electrons-cm-2, and short circuit current loss plays an important role on efficiency changes rather than open circuit voltage.

Study of micro-strip gas ionisation chambers substrates for CMS experiment at LHC

International Nuclear Information System (INIS)

Pallares, A.

1996-01-01

High luminosity, expected interaction and dose rates of the future LHC collider require the development of micro-strips gas chambers. In addition to optimization of this new detector, this work is concerned with understanding of gain loss phenomena. Influence of the gas substrate is carefully analysed, as well as theoretical concepts concerning glasses and their behaviour under polarization and irradiation, and the consequence on detection operations.Electron spin resonance is used to study, in standard glass, creation of radiation induced defects which may be charged. (D.L.)

Development of the irradiation facilities for silicon neutron doping in France

International Nuclear Information System (INIS)

Breant, P.; Cherruau, F.; Genthon, J.P.

1980-08-01

Irradiation facilities for silicon irradiations in France may be classified in two categories: on the one hand the devices directly implemented in the light water of α swimming-pool reactor and on the other hand the devices implemented in a neutronic medium -heavy water here- providing a high value of the thermal to fast neutron flux ratio. The tools used in France for silicon neutron doping are recapitulated according to this classification in tables, with their main characteristics; in addition it is specified that all existing facilities are instrumented with ingot rotation, flux monitoring, automatic time integration and are associated with handling, storage, cleaning, decontamination and activity control equipment. Finally, concerning the irradiation capacities given in these tables, it is pointed out that they are realistic and present capacities, for presently running devices and according to the way they are used on an average; that is to say that they take into account the real average dimensions of the ingot supplied and not the maximum possible loading with the maximum diameters. Further extensions of capacity are possible if need be by the installation of supplementary standard irradiation modules in the pools. Particular attention will given to the new developments: -new irradiaton facilities with a high Oth/Or ratio being developed in the new research reactor ORPHEE: - developments in the OSIRIS H 2 O reactor. In particular and in connection with the facilities developped in OSIRIS, neutronic problems typical and swimming-pool reactors will be contemplated and the adopted solutions given

In vivo dosimetry with silicon diodes in total body irradiation

International Nuclear Information System (INIS)

Oliveira, F.F.; Amaral, L.L.; Costa, A.M.; Netto, T.G.

2014-01-01

The aim of this work is the characterization and application of silicon diode detectors for in vivo dosimetry in total body irradiation (TBI) treatments. It was evaluated the diode response with temperature, dose rate, gantry angulations and field size. A maximum response variation of 2.2% was obtained for temperature dependence. The response variation for dose rate and angular was within 1.2%. For field size dependence, the detector response increased with field until reach a saturation region, where no more primary radiation beam contributes for dose. The calibration was performed in a TBI setup. Different lateral thicknesses from one patient were simulated and then the calibration factors were determined by means of maximum depth dose readings. Subsequent to calibration, in vivo dosimetry measurements were performed. The response difference between diode readings and the prescribed dose for all treatments was below 4%. This difference is in agreement as recommended by the International Commission on Radiation Units and Measurements (ICRU), which is ±5%. The present work to test the applicability of a silicon diode dosimetry system for performing in vivo dose measurements in TBI techniques presented good results. These measurements demonstrated the value of diode dosimetry as a treatment verification method and its applicability as a part of a quality assurance program in TBI treatments. - Highlights: ► Characterization of a silicon diode dosimetry system. ► Application of the diodes for in vivo dosimetry in total body irradiation treatments. ► Implementation of in vivo dosimetry as a part of a quality assurance program in radiotherapy

Measurements and characterization of a hole trap in neutron-irradiated silicon

International Nuclear Information System (INIS)

Avset, B.S.

1996-04-01

The report describes measurements on a hole trap in neutron irradiated silicon diodes made one high resistivity phosphorus doped floatzone silicon. The hole trap was detected by Deep Level Transient Spectroscopy. This measurement gave a trap activation energy of 0.475 MeV. Other measurements showed that the trap has very small capture cross sections for both holes and electrons (10 -18 to 10 -20 cm 2 ) and that the hole capture cross section is temperature dependent. The energy level position of the trap has been estimated to be between 0.25 and 0.29 eV from the valence band. 25 refs., 21 figs., 4 tabs

Capillaric penetration of etchant solution into swift heavy ion-irradiated silicone rubber

International Nuclear Information System (INIS)

Fink, D.; Mueller, M.

2000-01-01

There is growing evidence that etchants penetrate into latent ion tracks in polymers from the very beginning, i.e., even during the so-called 'incubation time' when no visible etchant attack is observed. The model of capillaric penetration of viscous liquids into sponge-like matter agrees with experimental values both in their parametric dependence as in the absolute values. Our experiments are based on LiOH etching of both pristine and swift heavy ion-irradiated silicone rubber foils. About five times more etchant penetrates into irradiated than into pristine silicone rubber. The overall etchant penetration is highest in tracks parallel to the surface normal, and decreases with increasing ion track tilt angle towards the surface normal. The etchant penetration into the tracks proceeds relatively slowly with an effective viscosity comparable to that of heavy machine oil. When swelling starts to predominate, the maximum etchant penetration depth comes to saturation, with the total etchant uptake even decreasing

Influence for high intensity irradiation on characteristics of silicon strip-detectors

International Nuclear Information System (INIS)

Anokhin, I.E.; Pugatch, V.M.; Zinets, O.S.

1995-01-01

Full text: Silicon strip detectors (SSD) are widely used for the coordinate determination of short-range as well as minimum ionizing particles with high spatial resolution. Submicron position sensitivity of strip-detectors for short-range particles has been studied by means of two dimensional analyses of charges collected by neighboring strips as well as by measurement of charge collection times [1]. Silicon strip detectors was also used for testing high energy electron beam [2]. Under large fluences the radiation defects are stored and such characteristics of strip-detectors as an accuracy of the coordinate determination and the registration efficiency are significantly changed. Radiation defects lead to a decrease of the lifetime and mobility of charge carriers and therefore to changes of conditions for the charge collection in detectors. The inhomogeneity in spatial distribution if defects and electrical field plays an important role in the charge collection. In this report the role of the diffusion and drift in the charge collection in silicon strip-detectors under irradiation up to 10 Mrad has been studied. The electric field distribution and its dependence on the radiation dose in the detector have been calculated. It is shown that for particles incident between adjacent strips the coordinate determination precision depends strongly on the detector geometry and the electric field distribution, particularly in the vicinity of strips. Measuring simultaneously the collected charges and collection times on adjacent strips one can essentially improve reliability of the coordinate determination for short-range particles. Usually SSD are fabricated on n-type wafers. It is well known that under high intensity irradiation n-Si material converts into p-Si as far as p-type silicon is more radiative hard than n-type silicon [3] it is reasonable to fabricate SSD using high resistivity p-Si. Characteristics of SSD in basis n-and P-Si have been compared and higher

Microstrip monopulse antenna for land mobile communications

Science.gov (United States)

Garcia, Q.; Martin, C.; Delvalle, J. C.; Jongejans, A.; Rinous, P.; Travers, M. N.

1993-01-01

Low cost is one of the main requirements in a communication system suitable for mass production, as it is the case for satellite land mobile communications. Microstrip technology fulfills this requirement which must be supported by a low cost tracking system design. The tradeoff led us to a prototype antenna composed of microstrip patches based on electromechanical closed-loop principle; the design and the results obtained are described.

Quality assurance and irradiation studies on CMS silicon strip sensors

CERN Document Server

Furgeri, Alexander

The high luminosity at the Large Hadron Collider at the European Particle Physics Laboratory CERN in Geneva causes a harsh radiation environment for the detectors. The most inner layers of the tracker are irradiated to an equivalent fluence of 1.6e14 1MeV-neutrons per cmˆ2. The radiation causes damage in the silicon lattice of the sensors. This increases the leakage current and changes the full depletion voltage. Both of these parameters are after irradiation neither stable with time nor with temperatures above 0oC. This thesis presents the changes of the leakage currents, the full depletion voltages, and all strip parameters of the sensors after proton and neutron irradiation. After irradiation annealing studies have been carried out. All observed effects are used to simulate the evolution of full depletion voltage for different annealing times and annealing temperatures in order to keep the power consumption as low as possible. From the observed radiation damage and annealing effects the sensors of the tra...

Anomalous effects in silicon solar cell irradiated by 1-MeV protons

Science.gov (United States)

Kachare, R.; Anspaugh, B. E.

1989-01-01

Several silicon solar cells having thicknesses of approximately 63 microns, with and without back-surface fields (BSF), were irradiated with 1-MeV protons having fluences between 10 to the 10th and 10 to the 12th sq cm. The irradiations were performed using both normal and isotropic incidence on the rear surfaces of the cells. It was observed that after irradiation with fluences greater than 10 to the 11th protons/sq cm, all BSF cells degraded at a faster rate than cells without BSF. The irradiation results are analyzed using a model in which irradiation-induced defects in the BSF region are taken into account. Tentatively, it is concluded that an increase in defect density due to the formation of aluminum and proton complexes in BSF cells is responsible for the higher-power loss in the BSF cells compared to the non-BSF cells.

Neutron transmutation doping technology of silicon and overview of trial irradiations at Cirus reactor

International Nuclear Information System (INIS)

Singh, Tej; Bhatnagar, Anil; Singh, Kanchhi; Raina, V.K.

2007-12-01

Neutron transmutation doped silicon (NTD-Si) has been used extensively in manufacturing of high power semiconductor devices. The quality of NTD-Si, both from view points of dopant concentration and homogeneity has been found superior to the quality of doped silicon produced by conventional methods. The technology of NTD-Si has been perfected to achieve more accurate resistivity and homogenous resistivity with complete elimination of hot spots. In addition, the greater spatial uniformity, as well as the precise control over the resistivity achievable by using the NTD process, has led to a substantial increase in the breakdown voltage capability of thyristors. The report describes the fundamentals of NTD-Si production and discusses various techniques used for control of dopant concentration and homogeneity. Various aspects like radiation damage, residual radio-activity, nuclear heating, surface contamination and annealing requirements of the silicon ingots after irradiation have also been discussed. Details of trail irradiation and characterization of NTD-Si samples have been provided. Future plans for production of NTD-Si in Cirus and Dhruva reactors have also been discussed. (author)

Study of irradiation effects in the silicon carbide cubic polytype by photoluminescence and electron spin resonance spectroscopies

International Nuclear Information System (INIS)

Lefevre, J.

2008-01-01

This experimental work has consisted in the study of point defects induced by an electronic irradiation in the cubic crystallographic structure of silicon carbide with low temperature photoluminescence and electron spin resonance spectroscopies. The first one of these measurement tools has allowed to estimate the displacement threshold energy in the silicon sub-lattice and then to analyze the thermal stability of the irradiation defects in the low temperature range: (10-300 K) and then in the high temperature range: (300-1400 K). Besides, on the base of a recent theoretical model, this thesis has confirmed the proposition of the isolated silicon antisite for the D1 center whose running beyond the nominal running temperature of fission nuclear reactors (generation IV), for which SiC is in part intended, seems to be particularly problematic. Measurements carried out by ESR under lighting have at last allowed to detect a new defect in its metastable spin state S=1, possibly associated to a silicon interstitial configuration. (O.M.)

Enhanced mass removal due to phase explosion during high irradiance nanosecond laser ablation of silicon

Energy Technology Data Exchange (ETDEWEB)

Yoo, Jong Hyun [Univ. of California, Berkeley, CA (United States)

2000-05-01

The morphology of craters resulting from high irradiance laser ablation of silicon was measured using a white light interferometry microscope. The craters show a dramatic increase in their depth and volume at a certain irradiance, indicating a change in the primary mechanism for mass removal. Laser shadowgraph imaging was used to characterize and differentiate the mass ejection processes for laser irradiances above and below the threshold value. Time-resolved images show distinct features of the mass ejected at irradiances above the threshold value including the presence of micron-sized particulates; this begins at approximately 300 ~ 400 ns after the start of laser heating. The analysis of the phenomena was carried out by using two models: a thermal evaporation model and a phase explosion model. Estimation of the crater depth due to the thermally evaporated mass led to a large underestimation of the crater depth for irradiances above the threshold. Above the threshold irradiance, the possibility of phase explosion was analyzed. Two important results are the thickness of the superheated liquid layer that is close to the critical temperature and the time for vapor bubbles that are generated in the superheated liquid to achieve a critical size. After reaching the critical size, vapor bubbles can grow spontaneously resulting in a violent ejection of liquid droplets from the superheated volume. The effects of an induced transparency, i.e. of liquid silicon turning into an optically transparent liquid dielectric medium, are also introduced. The estimated time for a bubble to reach the critical size is in agreement with the delay time measured for the initiation of large mass ejection. Also, the thickness of the superheated liquid layer that is close to the critical temperature at the time of the beginning of the large mass ejection is representative of the crater depth at the threshold irradiance. These results suggest that phase explosion is a plausible thermal

Lorentz angle measurements in irradiated silicon detectors between 77 K and 300 K

International Nuclear Information System (INIS)

Bartsch, V.; Boer, W. de; Bol, J.

2001-01-01

Future experiments are using silicon detectors in a high radiation environment and in high magnetic fields. The radiation tolerance of silicon improves by cooling it to temperatures below 180 K. However, at low temperatures the mobility increases, which leads to larger deflections of the charge carriers by the Lorentz force. We present measurements of the Lorentz angle between 77 K and 300 K before and after irradiation with a primary beam of 21 MeV protons to a flux of 10 13 /cm 2 . (author)

The AMS silicon tracker readout, performance results with minimum ionizing particles

CERN Document Server

Alpat, B; Battiston, R; Bourquin, Maurice; Burger, W J; Extermann, Pierre; Chang, Y H; Hou, S R; Pauluzzi, M; Produit, N; Qiu, S; Rapin, D; Ribordy, R; Toker, O; Wu, S X

2000-01-01

First results for the AMS silicon tracker readout performance are presented. Small 20.0*20.0*0.300 mm/sup 3/ silicon microstrip detectors were installed in a 50 GeV electron beam at CERN. The detector readout consisted of prototypes of the tracker data reduction card equipped with a 12-bit ADC and the tracker frontend hybrid with VA_hdr readout chips. The system performance is assessed in terms of signal-to-noise, position resolution, and efficiency. (13 refs).

Systematic irradiation studies and quality assurance of silicon strip sensors for the CBM Silicon Tracking System

Energy Technology Data Exchange (ETDEWEB)

Larionov, Pavel

2016-10-15

The Compressed Baryonic Matter (CBM) experiment at the upcoming Facility for Antiproton and Ion Research (FAIR) is designed to investigate the phase diagram of strongly interacting matter at neutron star core densities under laboratory conditions. This work is a contribution to the development of the main tracking detector of the CBM experiment - the Silicon Tracking System (STS), designed to provide the tracking and the momentum information for charged particles in a high multiplicity environment. The STS will be composed of about 900 highly segmented double-sided silicon strip sensors and is expected to face a harsh radiation environment up to 1 x 10{sup 14} cm{sup -2} in 1 MeV neutron equivalent fluence after several years of operation. The two most limiting factors of the successful operation of the system are the radiation damage and the quality of produced silicon sensors. It is therefore of importance to ensure both the radiation tolerance of the STS sensors and their quality during the production phase. The first part of this work details the investigation of the radiation tolerance of the STS sensors. Series of irradiations of miniature sensors as well as full-size prototype sensors were performed with reactor neutrons and 23 MeV protons to a broad range of fluences, up to 2 x 10{sup 14} n{sub eq}/cm{sup 2}. The evolution of the main sensor characteristics (leakage current, full depletion voltage and charge collection) was extensively studied both as a function of accumulated fluence and time after irradiation. In particular, charge collection measurements of miniature sensors demonstrated the ability of the sensors to yield approx. 90% to 95% of the signal after irradiation up to the lifetime fluence, depending on the readout side. First results on the charge collection performance of irradiated full-size prototype sensors have been obtained, serving as an input data for further final signal-to-noise evaluation in the whole readout chain. Operational

Modelling of heating and photoexcitation of single-crystal silicon under multipulse irradiation by a nanosecond laser at 1.06 μm

Science.gov (United States)

Polyakov, D. S.; Yakovlev, E. B.

2018-03-01

We report a theoretical study of heating and photoexcitation of single-crystal silicon by nanosecond laser radiation at a wavelength of 1.06 μm. The proposed physicomathematical model of heating takes into account the complex nonlinear dynamics of the interband absorption coefficient of silicon and the contribution of the radial heat removal to the cooling of silicon between pulses under multipulse irradiation, which allows one to obtain a satisfactory agreement between theoretical predictions of silicon melting thresholds at different nanosecond pulse durations and experimental data (both under single-pulse and multipulse irradiation). It is found that under irradiation by nanosecond pulses at a wavelength of 1.06 μm, the dynamic Burshtein–Moss effect can play an important role in processes of photoexcitation and heating. It is shown that with the regimes typical for laser multipulse microprocessing of silicon (the laser spot diameter is less than 100 μm, and the repetition rate of pulses is about 100 kHz), the radial heat removal cannot be neglected in the analysis of heat accumulation processes.

Effect of radiation-induced substrate defects on microstrip gas chamber gain behaviour

International Nuclear Information System (INIS)

Pallares, A.; Brom, J.M.; Bergdolt, A.M.; Coffin, J.; Eberle, H.; Sigward, M.H.; Fontaine, J.C.; Barthe, S.; Schunck, J.P.

1998-01-01

The aim of this work was to quantify the influence of radiation-induced substrate defects on microstrip gas chamber (MSGC) gain behaviour. The first part of this paper focuses on radiation effects on a typical MSGC substrate: Desag D263 glass. Defect generation was studied for Desag D263 with pure silica (Suprasil 1) as a reference. We studied the evolution of defect concentration with respect to accumulated doses up to 480 kGy. Annealing studies of defects in Desag D263 were also performed. In the second part, the radiation sensitivity of Desag D263 glass has been linked to the behaviour of the detector under irradiation. Comparative gain measurements were taken before and after substrate irradiation at 10 and 80 kGy the minimal dose received during LHC operation and the dose for which defect density is maximum (respectively). (orig.)

Initial investigations of the performance of a microstrip gas-avalanche chamber fabricated on a thin silicon-dioxide substrate

International Nuclear Information System (INIS)

Biagi, S.F.; Jackson, J.N.; Jones, T.J.; Taylor, S.

1992-01-01

We report on the construction of a micro-strip gas-avalanche chamber, designed such that the effective thickness of the insulating dielectric is ≅ 3 μm. Experimental results are presented on the initial observation of pulses from the chamber originating from the energy depositions of X-rays from an Fe 55 source. (orig.)

Deactivation of group III acceptors in silicon during keV electron irradiation

International Nuclear Information System (INIS)

Sah, C.; Sun, J.Y.; Tzou, J.J.; Pan, S.C.

1983-01-01

Experimental results on p-Si metal-oxide-semiconductor capacitors (MOSC's) are presented which demonstrate the electrical deactivation of the acceptor dopant impurity during 8-keV electron irradiation not only in boron but also aluminum and indium-doped silicon. The deactivation rates of the acceptors during the 8-keV electron irradiation are nearly independent of the acceptor impurity type. The final density of the remaining active acceptor approaches nonzero values N/sub infinity/, with N/sub infinity/(B) Al--H>In-H. These deactivation results are consistent with our hydrogen bond model. The thermal annealing or regeneration rate of the deactivated acceptors in the MOSC's irradiated by 8-keV electron is much smaller than that in the MOSC's that have undergone avalanche electron injection, indicating that the keV electron irradiation gives rise to stronger hydrogen-acceptor bond

Characterization of 150 $\\mu$m thick epitaxial silicon detectors from different producers after proton irradiation

CERN Document Server

Hoedlmoser, H; Haerkoenen, J; Kronberger, M; Trummer, J; Rodeghiero, P

2007-01-01

Epitaxial (EPI) silicon has recently been investigated for the development of radiation tolerant detectors for future high-luminosity HEP experiments. A study of 150 mm thick EPI silicon diodes irradiated with 24GeV=c protons up to a fluence of 3 1015 p=cm2 has been performed by means of Charge Collection Efficiency (CCE) measurements, investigations with the Transient Current Technique (TCT) and standard CV=IV characterizations. The aim of the work was to investigate the impact of radiation damage as well as the influence of the wafer processing on the material performance by comparing diodes from different manufacturers. The changes of CCE, full depletion voltage and leakage current as a function of fluence are reported. While the generation of leakage current due to irradiation is similar in all investigated series of detectors, a difference in the effective doping concentration can be observed after irradiation. In the CCE measurements an anomalous drop in performance was found even for diodes exposed to ...

Charge collection efficiency of irradiated silicon detector operated at cryogenic temperatures

International Nuclear Information System (INIS)

Borer, K.; Janos, S.; Palmieri, V.G.; Dezillie, B.; Li, Z.; Collins, P.; Niinikoski, T.O.; Lourenco, C.; Sonderegger, P.; Borchi, E.; Bruzzi, M.; Pirollo, S.; Granata, V.; Pagano, S.; Chapuy, S.; Dimcovski, Z.; Grigoriev, E.; Bell, W.; Devine, S.R.H.; O'Shea, V.; Smith, K.; Berglund, P.; Boer, W. de; Hauler, F.; Heising, S.; Jungermann, L.; Casagrande, L.; Cindro, V.; Mikuz, M.; Zavartanik, M.; Via, C. da; Esposito, A.; Konorov, I.; Paul, S.; Schmitt, L.; Buontempo, S.; D'Ambrosio, N.; Pagano, S.; Ruggiero, G.; Eremin, V.; Verbitskaya, E.

2000-01-01

The charge collection efficiency (CCE) of heavily irradiated silicon diode detectors was investigated at temperatures between 77 and 200 K. The CCE was found to depend on the radiation dose, bias voltage value and history, temperature, and bias current generated by light. The detector irradiated to the highest fluence 2x10 15 n/cm 2 yields a MIP signal of at least 15000 e - both at 250 V forward bias voltage, and at 250 V reverse bias voltage in the presence of a light-generated current. The 'Lazarus effect' was thus shown to extend to fluences at least ten times higher than was previously studied

Radiation emission phenomena in bent silicon crystals: Theoretical and experimental studies with 120 GeV/c positrons

International Nuclear Information System (INIS)

Lietti, D.; Bagli, E.; Baricordi, S.; Berra, A.; Bolognini, D.; Chirkov, P.N.; Dalpiaz, P.; Della Mea, G.; De Salvador, D.; Hasan, S.; Guidi, V.; Maisheev, V.A.

2012-01-01

The radiation emission phenomena in bent silicon crystals have been thoroughly investigated at the CERN SPS-H4 beamline. The incoming and outgoing trajectories of charged particles impinging on a silicon strip crystal have been reconstructed by high precision silicon microstrip detectors. A spectrometer method has been exploited to measure the radiation emission spectra both in volume reflection and in channeling. The theoretical method used to evaluate the photon spectra is presented and compared with the experimental results.

Scanning transient current study of the I-V stabilization phenomena in silicon detectors irradiated by fast neutrons

International Nuclear Information System (INIS)

Eremin, V.; Verbitskaya, E.; Sidorov, A.; Fretwurst, E.; Lindstrom, G.

1996-03-01

Investigation of the I-V stabilization phenomena in neutron irradiated silicon detectors has been carried out using scanning transient current technique (STCT) on non-irradiated PP + -p-n + detectors. The PP + -p-n + detectors were used to simulate the PP + -n-n + detectors irradiated beyond the space charge sign inversion (SCSI). Two mechanisms partially responsible for the I- V stabilization have been identified

Wearable Inset-Fed FR4 Microstrip Patch Antenna Design

Science.gov (United States)

Zaini, S. R. Mohd; Rani, K. N. Abdul

2018-03-01

This project proposes the design of a wireless body area network (WBAN) microstrip patch antenna covered by the jeans fabric as the outer layer operating at the center frequency, fc of 2.40 GHz. Precisely, the microstrip patch antenna with the inset-fed edge technique is designed and simulated systematically by using the Keysight Advanced Design System (ADS) software where the FR4 board with the dielectric constant, ɛr of 4.70, dissipation factor or loss tangent, tan δ of 0.02 and height, h of 1.60 mm is the chosen dielectric substrate. The wearable microstrip patch antenna design is then fabricated using the FR4 printed circuit board (PCB) material, hidden inside the jeans fabric, and attached to clothing, such as a jacket accordingly. Simulation and fabrication measurement results show that the designed microstrip patch antenna characteristics can be applied significantly within the industrial, scientific, and medical (ISM) radio band, which is at fc = 2.40 GHz.

Analysis of Microstrip Line Fed Patch Antenna for Wireless Communications

Directory of Open Access Journals (Sweden)

Singh Ashish

2017-11-01

Full Text Available In this paper, theoretical analysis of microstrip line fed rectangular patch antenna loaded with parasitic element and split-ring resonator is presented. The proposed antenna shows that the dualband operation depends on gap between parasitic element, split-ring resonator, length and width of microstrip line. It is found that antenna resonates at two distinct resonating modes i.e., 0.9 GHz and 1.8 GHz for lower and upper resonance frequencies respectively. The antenna shows dual frequency nature with frequency ratio 2.0. The characteristics of microstrip line fed rectangular patch antenna loaded with parasitic element and split-ring resonator antenna is compared with other prototype microstrip line fed antennas. Further, the theoretical results are compared with simulated and reported experimental results, they are in close agreement.

Silicon Strip Detectors for ATLAS at the HL-LHC Upgrade

CERN Document Server

Hara, K; The ATLAS collaboration

2012-01-01

The present ATLAS silicon strip (SCT) and transition radiation (TRT) trackers will be replaced with new silicon strip detectors, as part of the Inner Tracker System (ITK), for the Phase-2 upgrade of the Large Hadron Collider, HL-LHC. We have carried out intensive R&D programs to establish radiation harder strip detectors that can survive in a radiation level up to 3000 fb-1 of integrated luminosity based on n+-on-p microstrip detector. We describe main specifications for this year’s sensor fabrication, followed by a description of possible module integration schema

Displacement damage analysis and modified electrical equivalent circuit for electron and photon-irradiated silicon solar cells

Science.gov (United States)

Arjhangmehr, Afshin; Feghhi, Seyed Amir Hossein

2014-10-01

Solar modules and arrays are the conventional energy resources of space satellites. Outside the earth's atmosphere, solar panels experience abnormal radiation environments and because of incident particles, photovoltaic (PV) parameters degrade. This article tries to analyze the electrical performance of electron and photon-irradiated mono-crystalline silicon (mono-Si) solar cells. PV cells are irradiated by mono-energetic electrons and poly-energetic photons and immediately characterized after the irradiation. The mean degradation of the maximum power (Pmax) of silicon solar cells is presented and correlated using the displacement damage dose (Dd) methodology. This method simplifies evaluation of cell performance in space radiation environments and produces a single characteristic curve for Pmax degradation. Furthermore, complete analysis of the results revealed that the open-circuit voltage (Voc) and the filling factor of mono-Si cells did not significantly change during the irradiation and were independent of the radiation type and fluence. Moreover, a new technique is developed that adapts the irradiation-induced effects in a single-cell equivalent electrical circuit and adjusts its elements. The "modified circuit" is capable of modeling the "radiation damage" in the electrical behavior of mono-Si solar cells and simplifies the designing of the compensation circuits.

Influence of Silicon on Swelling and Microstructure in Russian Austenitic Stainless Steels Irradiated to High Neutron Doses

International Nuclear Information System (INIS)

Porollo, S.I.; Shulepin, S.V.; Konobeev, Y.V.; Garner, F.

2007-01-01

Full text of publication follows: For some applications in fusion devices austenitic stainless steels are still considered to be candidates for use as structural components, but high neutron exposures must be endured by the steels. Operational experience of fast reactors in Western Europe, USA and Japan provides evidence of the possible use of austenitic steels up to ∼ 150 dpa. Studies aimed at improvement of existing Russian austenitic steels are being carried out in Russia. For improvement of irradiation resistance of Russian steels it is necessary to understand the basic mechanisms responsible for deterioration of steel properties. This understanding can be achieved by continuing detailed investigations of the microstructure of cladding steels after irradiation to high doses. By investigating the evolution of radiation-induced microstructure in neutron irradiated steels of different chemical composition one can study the effect of chemical variations on steel properties. Silicon is one of the most important chemical elements that strongly influence the behavior of austenitic steel properties under irradiation. In this paper results are presented of investigations of the effect of silicon additions on void swelling and microstructure of base austenitic stainless steel EI-847 (0.06C-16Cr-15Ni- 3Mo-Nb) irradiated as fuel pin cladding of both regular and experimental assemblies in the BOR-60, BN-350 and BN-600 fast reactors to neutron doses up to 49 dpa. The possible mechanisms of silicon's effect on void swelling in austenitic stainless steels are presented and analyzed. (authors)

Formation of hydrogen-related traps in electron-irradiated n-type silicon by wet chemical etching

International Nuclear Information System (INIS)

Tokuda, Yutaka; Shimada, Hitoshi

1998-01-01

Interaction of hydrogen atoms and vacancy-related defects in 10 MeV electron-irradiated n-type silicon has been studied by deep-level transient spectroscopy. Hydrogen has been incorporated into electron-irradiated n-type silicon by wet chemical etching. The reduction of the concentration of the vacancy-oxygen pair and divacancy occurs by the incorporation of hydrogen, while the formation of the NH1 electron trap (E c - 0.31 eV) is observed. Further decrease of the concentration of the vacancy-oxygen pair and further increase of the concentration of the NH1 trap are observed upon subsequent below-band-gap light illumination. It is suggested that the trap NH1 is tentatively ascribed to the vacancy-oxygen pair which is partly saturated with hydrogen

Wideband RCS Reduction of Microstrip Array Antenna Based on Absorptive Frequency Selective Surface and Microstrip Resonators

Directory of Open Access Journals (Sweden)

Jingjing Xue

2017-01-01

Full Text Available An approach for wideband radar cross section (RCS reduction of a microstrip array antenna is presented and discussed. The scheme is based on the microstrip resonators and absorptive frequency selective surface (AFSS with a wideband absorptive property over the low band 1.9–7.5 GHz and a transmission characteristic at high frequency 11.05 GHz. The AFSS is designed to realize the out-of-band RCS reduction and preserve the radiation performance simultaneously, and it is placed above the antenna with the operating frequency of 11.05 GHz. Moreover, the microstrip resonators are loaded to obtain the in-band RCS reduction. As a result, a significant RCS reduction from 1.5 GHz to 13 GHz for both types of polarization has been accomplished. Compared with the reference antenna, the simulated results exhibit that the monostatic RCS of the proposed array antenna in x- and y-polarization can be reduced as much as 17.6 dB and 21.5 dB, respectively. And the measured results agree well with the simulated ones.

Performance of p-type micro-strip detectors after irradiation to $7.5x10^{15} p/cm^{2}$

CERN Document Server

Allport, Philip P; Lozano-Fantoba, Manuel; Sutcliffe, Peter; Velthuis, J J; Vossebeld, Joost Herman

2004-01-01

Exploiting the advantages of reading out segmented silicon from the n-side, we have produced test detectors with LHC pitch but 1 cm long strips which even after proton irradiation at the CERN PS to 7.5*10 /sup 15/ cm/sup -2/ show signal to noise greater than 8:1 using LHC speed electronics. This dose exceeds by a factor of 2 that required for a replacement of the ATLAS semiconductor tracker to cope with an upgrade of the LHC to a Super-LHC with 10 times greater luminosity. These detectors were processed on p-type starting material of resistivity ~ 2 k Omega cm and, unlike n-in-n designs, only required single-sided processing. Such technology should therefore provide a relatively inexpensive route to replacing the central tracking at both ATLAS and CMS for Super-LHC. The shorter strip length is required to limit the noise. Even at these extreme doses 30% of the non-irradiated signal is seen. This 7000e/sup -/ signal (in 280 mu m thick sensors) is very competitive with the post irradiation performance of other,...

SVX II a silicon vertex detector for run II of the tevatron

International Nuclear Information System (INIS)

Bortoletto, D.

1994-11-01

A microstrip silicon detector SVX II has been proposed for the upgrade of the vertex detector of the CDF experiment to be installed for run II of the Tevatron in 1998. Three barrels of four layers of double sided detectors will cover the interaction region. The requirement of the silicon tracker and the specification of the sensors are discussed together with the proposed R ampersand D to verify the performance of the prototypes detectors produced by Sintef, Micron and Hamamatsu

The Influence of Deformation on the Surface Structure of Silicon Under Irradiation by $^{86}$Kr Ions with Energy 253 MeV

CERN Document Server

Vlasukova, L A; Hofmann, A; Komarov, F F; Semina, V K; Yuvchenko, V N

2006-01-01

The influence of the previously produced deformation in silicon structure by means of macro-scratch surface covering on the sputtering processes under following irradiation by swift $^{86}$Kr ions is studied. The significant leveling of surface relief of irradiated silicon was observed using atomic force microscopy method (AFM), in particular it takes place for smoothing of micro-scratches produced by mechanical polishing of silicon initial plates. The experimental studies of irradiated surface allowed one to conclude that it is impossible to explain the surface changes only by elastic cascade mechanism as it was calculated using the computer code TRIM-98, because the calculated sputtered layers of silicon at ion fluence $\\Phi_{\\rm Kr} = 1{.}3\\cdot10^{14}$ ion/cm$^{2}$ should be $\\Delta H_{\\rm Sputtering}^{\\rm Kr} = 5{.}5\\cdot10^{-3 }${\\AA}. Correspondingly, the surface changes should be explained by one of mechanisms of inelastic sputtering. The macro-cracks on the surface were observed near the scratches. I...

Design and Tests of the Silicon Sensors for the ZEUS Micro Vertex Detector

OpenAIRE

Dannheim, D.; Koetz, U.; Coldewey, C.; Fretwurst, E.; Garfagnini, A.; Klanner, R.; Martens, J.; Koffeman, E.; Tiecke, H.; Carlin, R.

2002-01-01

To fully exploit the HERA-II upgrade,the ZEUS experiment has installed a Micro Vertex Detector (MVD) using n-type, single-sided, silicon micro-strip sensors with capacitive charge division. The sensors have a readout pitch of 120 micrometers, with five intermediate strips (20 micrometer strip pitch). The designs of the silicon sensors and of the test structures used to verify the technological parameters, are presented. Results on the electrical measurements are discussed. A total of 1123 sen...

CCE measurements and annealing studies on proton-irradiated p-type MCz silicon diodes

CERN Document Server

Hoedlmoser, H; Köhler, M; Nordlund, H

2007-01-01

Magnetic Czochralski (MCz) silicon has recently been investigated for the development of radiation tolerant detectors for future high-luminosity HEP experiments. A study of p-type MCz Silicon diodes irradiated with protons up to a fluence of has been performed by means of Charge Collection Efficiency (CCE) measurements as well as standard CV/IV characterizations. The changes of CCE, full depletion voltage and leakage current as a function of fluence are reported. A subsequent annealing study of the irradiated detectors shows an increase in effective doping concentration and a decrease in the leakage current, whereas the CCE remains basically unchanged. Two different series of detectors have been compared differing in the implantation dose of p-spray isolation as well as effective doping concentration (Neff) of the p-type bulk presumably due to a difference in thermal donor (TD) activation during processing. The series with the higher concentration of TDs shows a delayed reverse annealing of Neff after irradia...

The tensile effect on crack formation in single crystal silicon irradiated by intense pulsed ion beam

Science.gov (United States)

Liang, Guoying; Shen, Jie; Zhang, Jie; Zhong, Haowen; Cui, Xiaojun; Yan, Sha; Zhang, Xiaofu; Yu, Xiao; Le, Xiaoyun

2017-10-01

Improving antifatigue performance of silicon substrate is very important for the development of semiconductor industry. The cracking behavior of silicon under intense pulsed ion beam irradiation was studied by numerical simulation in order to understand the mechanism of induced surface peeling observed by experimental means. Using molecular dynamics simulation based on Stillinger Weber potential, tensile effect on crack growth and propagation in single crystal silicon was investigated. Simulation results reveal that stress-strain curves of single crystal silicon at a constant strain rate can be divided into three stages, which are not similar to metal stress-strain curves; different tensile load velocities induce difference of single silicon crack formation speed; the layered stress results in crack formation in single crystal silicon. It is concluded that the crack growth and propagation is more sensitive to strain rate, tensile load velocity, stress distribution in single crystal silicon.

The development of two ASIC's for a fast silicon strip detector readout system

International Nuclear Information System (INIS)

Christain, D.; Haldeman, M.; Yarema, R.; Zimmerman, T.; Newcomer, F.M.; VanBerg, R.

1989-01-01

A high speed, low noise readout system for silicon strip detectors is being developed for Fermilab E771, which will begin taking data in 1989. E771 is a fixed target experiment designed to study the production of B hadrons by an 800 GeV/c proton beam. The experimental apparatus consists of an open geometry magnetic spectrometer featuring good muon and electron identification and a 16000 channel silicon microstrip vertex detector. This paper reviews the design and prototyping of two application specific integrated circuits (ASIC's) an amplifier and a discriminator, which are being produced for the silicon strip detector readout system

Reduction of Cr(VI) to Cr(III) using silicon nanowire arrays under visible light irradiation

Energy Technology Data Exchange (ETDEWEB)

Fellahi, Ouarda [Institut d' Electronique, de Microélectronique et de Nanotechnologie (IEMN), UMR CNRS 8520, Avenue Poincaré—BP 70478, 59652 Villeneuve d' Ascq Cedex (France); Centre de Recherche en Technologie des Semi-conducteurs pour l' Energétique-CRTSE 02, Bd Frantz Fanon, BP. 140, Alger 7 Merveilles (Algeria); Barras, Alexandre [Institut d' Electronique, de Microélectronique et de Nanotechnologie (IEMN), UMR CNRS 8520, Avenue Poincaré—BP 70478, 59652 Villeneuve d' Ascq Cedex (France); Pan, Guo-Hui [State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, 3888 Dong Nanhu Road, Changchun 130033 (China); Coffinier, Yannick [Institut d' Electronique, de Microélectronique et de Nanotechnologie (IEMN), UMR CNRS 8520, Avenue Poincaré—BP 70478, 59652 Villeneuve d' Ascq Cedex (France); Hadjersi, Toufik [Centre de Recherche en Technologie des Semi-conducteurs pour l' Energétique-CRTSE 02, Bd Frantz Fanon, BP. 140, Alger 7 Merveilles (Algeria); Maamache, Mustapha [Laboratoire de Physique Quantique et Systèmes Dynamiques, Département de Physique, Université de Sétif, Sétif 19000 (Algeria); Szunerits, Sabine [Institut d' Electronique, de Microélectronique et de Nanotechnologie (IEMN), UMR CNRS 8520, Avenue Poincaré—BP 70478, 59652 Villeneuve d' Ascq Cedex (France); and others

2016-03-05

Highlights: • Cr(VI) reduction to Cr(III) using silicon nanowires decorated with Cu nanoparticles. • The reduction takes place at room temperature and neutral pH under visible light. • The photocatalytic reduction was enhanced by addition of adipic or citric acid. - Abstract: We report an efficient visible light-induced reduction of hexavalent chromium Cr(VI) to trivalent Cr(III) by direct illumination of an aqueous solution of potassium dichromate (K{sub 2}Cr{sub 2}O{sub 7}) in the presence of hydrogenated silicon nanowires (H-SiNWs) or silicon nanowires decorated with copper nanoparticles (Cu NPs-SiNWs) as photocatalyst. The SiNW arrays investigated in this study were prepared by chemical etching of crystalline silicon in HF/AgNO{sub 3} aqueous solution. The Cu NPs were deposited on SiNW arrays via electroless deposition technique. Visible light irradiation of an aqueous solution of K{sub 2}Cr{sub 2}O{sub 7} (10{sup −4} M) in presence of H-SiNWs showed that these substrates were not efficient for Cr(VI) reduction. The reduction efficiency achieved was less than 10% after 120 min irradiation at λ > 420 nm. Addition of organic acids such as citric or adipic acid in the solution accelerated Cr(VI) reduction in a concentration-dependent manner. Interestingly, Cu NPs-SiNWs was found to be a very efficient interface for the reduction of Cr(VI) to Cr(III) in absence of organic acids. Almost a full reduction of Cr(VI) was achieved by direct visible light irradiation for 140 min using this photocatalyst.

Effect of radiation-induced substrate defects on microstrip gas chamber gain behaviour

Energy Technology Data Exchange (ETDEWEB)

Pallares, A.; Brom, J.M.; Bergdolt, A.M.; Coffin, J.; Eberle, H.; Sigward, M.H. [Institute de Recherches Subatomiques, 67 - Strasbourg (France); Fontaine, J.C. [Universite de Haute Alsace, GRPHE, 61 rue Albert Camus, 68093 Mulhouse Cedex (France); Barthe, S.; Schunck, J.P. [Laboratoire PHASE (UPR 292 du CNRS), 23 rue du Loess, BP 28, 67037 Strasbourg Cedex 2 (France)

1998-08-01

The aim of this work was to quantify the influence of radiation-induced substrate defects on microstrip gas chamber (MSGC) gain behaviour. The first part of this paper focuses on radiation effects on a typical MSGC substrate: Desag D263 glass. Defect generation was studied for Desag D263 with pure silica (Suprasil 1) as a reference. We studied the evolution of defect concentration with respect to accumulated doses up to 480 kGy. Annealing studies of defects in Desag D263 were also performed. In the second part, the radiation sensitivity of Desag D263 glass has been linked to the behaviour of the detector under irradiation. Comparative gain measurements were taken before and after substrate irradiation at 10 and 80 kGy the minimal dose received during LHC operation and the dose for which defect density is maximum (respectively). (orig.) 26 refs.

Evaluation of silicon micro strip detectors with large read-out pitch

International Nuclear Information System (INIS)

Senyo, K.; Yamamura, K.; Tsuboyama, T.; Avrillon, S.; Asano, Y.; Bozek, A.; Natkaniec, Z.; Palka, H.; Rozanska, M.; Rybicki, K.

1996-01-01

For the development of the silicon micro-strip detector with the pitch of the readout strips as large as 250 μm on the ohmic side, we made samples with different structures. Charge collection was evaluated to optimize the width of implant strips, aluminum read-out strips, and/or the read-out scheme among strips. (orig.)

The design and simulation of UHF RFID microstrip antenna

Science.gov (United States)

Chen, Xiangqun; Huang, Rui; Shen, Liman; Liu, Liping; Xiong, Dezhi; Xiao, Xiangqi; Liu, Mouhai; Renheng, Xu

2018-02-01

At present, China has delineated UHF RFID communicating frequency range which is 840 ∼ 845 MHz and 920 ∼ 925 MHz, but most UHF microstrip antenna don’t carry out this standard, that leads to radio frequency pollution. In order to solve the problems above, a method combining theory and simulation is adopted. Combining with a new ceramic material, a 925.5 MHz RFID microstrip antenna is designed, which is optimized and simulated by HFSS software. The results show that the VSWR of this RFID microstrip antenna is relatively small in the vicinity of 922.5 MHz, the gain is 2.1 dBi, which can be widely used in China’s UHF RFID communicating equipments.

Superconducting microstrip antennas: An experimental comparison of two feeding methods

International Nuclear Information System (INIS)

Richard, M.A.; Claspy, P.C.; Bhasin, K.B.

1993-01-01

The recent discovery of high-temperature superconductors (HTS's) has generated a substantial amount of interest in microstrip antenna applications. However, the high permittivity of substrates compatible with HTS causes difficulty in feeding such antennas because of the high patch edge impedance. In this paper, two methods for feeding HTS microstrip antennas at K and Ka-band are examined. Superconducting microstrip antennas that are directly coupled and gap-coupled to a microstrip transmission line have been designed and fabricated on lanthanum aluminate substrates using Y-Ba-Cu-O superconducting thin films. Measurements from these antennas, including input impedance, bandwidth, efficiency, and patterns, are presented and compared with published models. The measured results demonstrate that usable antennas can be constructed using either of these architectures, although the antennas suffer from narrow bandwidths. In each case, the HTS antenna shows a substantial improvement over an identical antenna made with normal metals

Radiation damage status of the ATLAS silicon strip detectors (SCT)

CERN Document Server

Kondo, Takahiko; The ATLAS collaboration

2017-01-01

The Silicon microstrip detector system (SCT) of the ATLAS experiment at LHC has been working well for about 7 years since 2010. The innermost layer has already received a few times of 10**13 1-MeV neutron-equivalent fluences/cm2. The evolutions of the radiation damage effects on strip sensors such as leakage current and full depletion voltages will be presented.

Variation of minority charge carrier lifetime in high-resistance p-type silicon under irradiation

International Nuclear Information System (INIS)

Basheleishvili, Z.V.; Garnyk, V.S.; Gorin, S.N.; Pagava, T.A.

1984-01-01

The minority carrier lifetime (tau) variation was studied in the process of p-type silicon bombardment with fast 8 MeV electrons. The irradiation and all measurements were carried out at room temperature. The tau quantity was measured by the photoconductivity attenuation method at a low injection level 20% measurement error; the resistivity was measured by the four-probe method (10% error). The resistivity and minority charge carrier lifetime tau are shown to increase with the exposure dose. It is supposed that as radiation dose increases, the rearrangement of the centres responsible for reducing the lifetime occurs and results in a tau increase in the material being irradiated, however the tau value observed in the original samples is not attained. The restoration of the minority carrier lifetime in p-type high-resistance silicon with a growing exposure dose might proceed due to reduction in the free carrier concentration

Time-resolved studies of ultrarapid solidification of highly undercooled molten silicon formed by pulsed laser irradiation

International Nuclear Information System (INIS)

Lowndes, D.H.; Jellison, G.E. Jr.; Wood, R.F.; Carpenter, R.

1984-01-01

This paper reports new results of nanosecond-resolution time-resolved optical reflectivity measurements, during pulsed excimer (KrF, 248 nm) laser irradiation of Si-implanted amorphous (a) silicon layers, which, together with model calculations and post-irradiation TEM measurements, have allowed us to study both the transformation of a-Si to a highly undercooled liquid (l) phase and the subsequent ultrarapid solidification process

Proton-irradiation technology for high-frequency high-current silicon welding diode manufacturing

Science.gov (United States)

Lagov, P. B.; Drenin, A. S.; Zinoviev, M. A.

2017-05-01

Different proton irradiation regimes were tested to provide more than 20 kHz-frequency, soft reverse recovery “snap-less” behavior, low forward voltage drop and leakage current for 50 mm diameter 7 kA/400 V welding diode Al/Si/Mo structure. Silicon diode with such parameters is very suitable for high frequency resistance welding machines of new generation for robotic welding.

IV and CV curves for irradiated prototype BTeV silicon pixel sensors

International Nuclear Information System (INIS)

Coluccia, Maria R.

2002-01-01

The authors present IV and CV curves for irradiated prototype n + /n/p + silicon pixel sensors, intended for use in the BTeV experiment at Fermilab. They tested pixel sensors from various vendors and with two pixel isolation layouts: p-stop and p-spray. Results are based on exposure with 200 MeV protons up to 6 x 10 14 protons/cm 2

Structural, thermal and optical behavior of 84 MeV oxygen and 120 MeV silicon ions irradiated PES

International Nuclear Information System (INIS)

Samra, Kawaljeet Singh; Thakur, Sonika; Singh, Lakhwant

2011-01-01

In order to study structural, thermal and optical behavior, thin flat samples of polyethersulfone were irradiated with oxygen and silicon ions. The changes in properties were analyzed using different techniques viz: X-ray diffraction, thermo-gravimetric analysis, Fourier transform infrared, UV-visible and photoluminescence spectroscopy. A noticeable increase in the intensity of X-ray diffraction peaks was observed after irradiation with 84 MeV oxygen ions at low and medium fluences, which may be attributed to radiation-induced cross-linking in polymer. Fourier transform infrared and thermo-gravimetric analysis corroborated the results of X-ray diffraction analysis. No noticeable change in the Fourier transform infrared spectra of oxygen ion irradiated polyethersulfone were observed even at the highest fluence of 1 x 10 13 ions cm -2 , but after irradiation with silicon ions, a reduction in intensity of almost all characteristic bands was revealed. An increase in the activation energy of decomposition of polyethersulfone was observed after irradiation with 84 MeV oxygen ions up to medium fluences but degradation was revealed at higher fluences. Similar trends were observed by photoluminescence analysis.

Signal integrity analysis on discontinuous microstrip line

International Nuclear Information System (INIS)

Qiao, Qingyang; Dai, Yawen; Chen, Zipeng

2013-01-01

In high speed PCB design, microstirp lines were used to control the impedance, however, the discontinuous microstrip line can cause signal integrity problems. In this paper, we use the transmission line theory to study the characteristics of microstrip lines. Research results indicate that the discontinuity such as truncation, gap and size change result in the problems such as radiation, reflection, delay and ground bounce. We change the discontinuities to distributed parameter circuits, analysed the steady-state response and transient response and the phase delay. The transient response cause radiation and voltage jump.

Photon counting microstrip X-ray detectors with GaAs sensors

Science.gov (United States)

Ruat, M.; Andrä, M.; Bergamaschi, A.; Barten, R.; Brückner, M.; Dinapoli, R.; Fröjdh, E.; Greiffenberg, D.; Lopez-Cuenca, C.; Lozinskaya, A. D.; Mezza, D.; Mozzanica, A.; Novikov, V. A.; Ramilli, M.; Redford, S.; Ruder, C.; Schmitt, B.; Shi, X.; Thattil, D.; Tinti, G.; Tolbanov, O. P.; Tyazhev, A.; Vetter, S.; Zarubin, A. N.; Zhang, J.

2018-01-01

High-Z sensors are increasingly used to overcome the poor efficiency of Si sensors above 15 keV, and further extend the energy range of synchrotron and FEL experiments. Detector-grade GaAs sensors of 500 μm thickness offer 98% absorption efficiency at 30 keV and 50% at 50 keV . In this work we assess the usability of GaAs sensors in combination with the MYTHEN photon-counting microstrip readout chip developed at PSI. Different strip length and pitch are compared, and the detector performance is evaluated in regard of the sensor material properties. Despite increased leakage current and noise, photon-counting strips mounted with GaAs sensors can be used with photons of energy as low as 5 keV, and exhibit excellent linearity with energy. The charge sharing is doubled as compared to silicon strips, due to the high diffusion coefficient of electrons in GaAs.

Resonance of Superconducting Microstrip Antenna with Aperture in the Ground Plane

Directory of Open Access Journals (Sweden)

S. Benkouda

2013-08-01

Full Text Available This paper presents a rigorous full-wave analysis of a high Tc superconducting rectangular microstrip antenna with a rectangular aperture in the ground plane. To include the effect of the superconductivity of the microstrip patch in the full-wave analysis, a complex surface impedance is considered. The proposed approach is validated by comparing the computed results with previously published data. Results showing the effect of the aperture on the resonance of the superconducting microstrip antenna are given.

The Alpha Magnetic Spectrometer Silicon Tracker

CERN Document Server

Burger, W J

1999-01-01

The Alpha Magnetic Spectrometer (AMS) is designed as a independent module for installation on the International Space Station Alpha (ISSA) in the year 2002 for an operational period of three years. The principal scientific objectives are the searches for antimatter and dark matter in cosmic rays. The AMS uses 5.5 m sup 2 of silicon microstrip sensors to reconstruct charged particle trajectories in the field of a permanent magnet. The detector design and construction covered a 3 yr period which terminated with a test flight on the NASA space shuttle Discovery during June 2-12, 1988. In this contribution, we describe the shuttle version of the AMS silicon tracker, including preliminary results of the tracker performance during the flight. (author)

Neutron irradiation results for the LHCb silicon tracker data readout system components

CERN Document Server

Vollhardt, A

2003-01-01

This note reports irradiation data for different components of the LHCb Silicon Tracker data readout system, which will be exposed to neutron fluences due to their location in the readout link service box on the tracking station frame. The components were part of a neutron irradiation campaign in April 2003 at the Prospero reactor at CEA Valduc (France) and were exposed to fluences 5 to 100 times higher than the expected fluences at the experiment. For all tested components, minor or no influence on device performance was measured. We therefore consider the tested components to be compatible with the expected neutron fluences at the foreseen locations in the LHCb experiment.

Low-temperature positron-lifetime studies of proton-irradiated silicon

DEFF Research Database (Denmark)

Mäkinen, S.; Rajainmäki, H.; Linderoth, Søren

1990-01-01

The positron-lifetime technique has been used to identify defects created in high-purity single-crystal silicon by irradiation with 12-MeV protons at 15 K, and the evolution of the defects has been studied by subsequent annealings between 20 and 650 K. Two clear annealing steps were seen...... in the samples, the first starting at 100 K and the other at 400 K. The first is suggested to be a result of the migration of free, negatively charged monovacancies, and the second is connected to the annealing of some vacancy-impurity complexes, probably negatively charged vacancy-oxygen pairs. The specific...

Results on photon and neutron irradiation of semitransparent amorphous-silicon sensors

CERN Document Server

Carabe, J; Ferrando, A; Fuentes, J; Gandia, J J; Josa-Mutuberria, I; Molinero, A; Oller, J C; Arce, P; Calvo, E; Figueroa, C F; García, N; Matorras, F; Rodrigo, T; Vila, I; Virto, A L; Fenyvesi, A; Molnár, J; Sohler, D

2000-01-01

Semitransparent amorphous-silicon sensors are basic elements for laser 2D position reconstruction in the CMS multipoint alignment link system. Some of the sensors have to work in a very hard radiation environment. Two different sensor types have been irradiated with /sup 60/Co photons (up to 100 kGy) and fast neutrons (up to 10/sup 15 / cm/sup -2/), and the subsequent change in their performance has been measured. (13 refs).

Beam test results of the irradiated Silicon Drift Detector for ALICE

OpenAIRE

Kushpil, S.; Crescio, E.; Giubellino, P.; Idzik, M.; Kolozhvari, A.; Kushpil, V.; Martinez, M. I.; Mazza, G.; Mazzoni, A.; Meddi, F.; Nouais, D.; Petracek, V.; Piemonte, C.; Rashevsky, A.; Riccati, L.

2005-01-01

The Silicon Drift Detectors will equip two of the six cylindrical layers of high precision position sensitive detectors in the ITS of the ALICE experiment at LHC. In this paper we report the beam test results of a SDD irradiated with 1 GeV electrons. The aim of this test was to verify the radiation tolerance of the device under an electron fluence equivalent to twice particle fluence expected during 10 years of ALICE operation.

A multiplicity jump trigger using silicon planes

International Nuclear Information System (INIS)

Alexopoulos, T.; Erwin, A.R.

1993-01-01

Since silicon tracking planes are already present in a B decay experiment, it is an attractive idea to use these as part of a multiplicity jump detector. Two average B decays would produce a multiplicity jump of around 10 in the final state. Such a trigger has been tried for a fixed target Charm experiment with disappointing success. The failure was attributed to the difficulty in adequately controlling the gains of a large number of microstrip amplifies

Tribology of silicon-thin-film-coated SiC ceramics and the effects of high energy ion irradiation

International Nuclear Information System (INIS)

Kohzaki, Masao; Noda, Shoji; Doi, Harua

1990-01-01

The sliding friction coefficients and specific wear of SiC ceramics coated with a silicon thin film (Si/SiC) with and without subsequent Ar + irradiation against a diamond pin were measured with a pin-on-disk tester at room temperature in laboratory air of approximately 50% relative humidity without oil lubrication for 40 h. The friction coefficient of Ar + -irradiated Si/SiC was about 0.05 with a normal load of 9.8 N and remained almost unchanged during the 40 h test, while that of SiC increased from 0.04 to 0.12 during the test. The silicon deposition also reduced the specific wear of SiC to less than one tenth of that of the uncoated SiC. Effectively no wear was detected in Si/SiC irradiated to doses of over 2x10 16 ions cm -2 . (orig.)

Gas microstrip detectors based on flexible printed circuit

International Nuclear Information System (INIS)

Salomon, M.; Crowe, K.; Faszer, W.; Lindsay, P.; Curran Maier, J.M.

1995-09-01

Microstrip Gas Detectors (MSGC's) were introduced some years ago as position sensitive detectors capable of operating at very high rates. The authors have studied the properties of a new type of Gas Microstrip Counter built using flexible printed circuit technology. They describe the manufacturing procedures, the assembly of the device, as well as its operation under a variety of conditions, gases and types of radiation. They also describe two new passivation materials, tantalum and niobium, which produce effective surfaces

Radiation Hard Silicon Photonics Mach-Zehnder Modulator for HEP applications: all-Synopsys SentaurusTM Pre-Irradiation Simulation

CERN Document Server

Cammarata, Simone

2017-01-01

Silicon Photonics may well provide the opportunity for new levels of integration between detectors and their readout electronics. This technology is thus being evaluated at CERN in order to assess its suitability for use in particle physics experiments. In order to check the agreement with measurements and the validity of previous device simulations, a pure Synopsys SentaurusTM simulation of an un-irradiated Mach-Zehnder silicon modulator has been carried out during the Summer Student project. Index Terms—Silicon Photonics, Mach-Zehnder modulator, electro-optic simulation, Synopsys SentaurusTM, electro-optic measurement, HEP.

Measurements of the reverse current of highly irradiated silicon sensors to determine the effective energy and current related damage rate

Science.gov (United States)

Wiehe, Moritz; Wonsak, S.; Kuehn, S.; Parzefall, U.; Casse, G.

2018-01-01

The reverse current of irradiated silicon sensors leads to self heating of the sensor and degrades the signal to noise ratio of a detector. Precise knowledge of the expected reverse current during detector operation is crucial for planning and running experiments in High Energy Physics. The dependence of the reverse current on sensor temperature and irradiation fluence is parametrized by the effective energy and the current related damage rate, respectively. In this study 18 n-in-p mini silicon strip sensors from companies Hamamatsu Photonics and Micron Semiconductor Ltd. were deployed. Measurements of the reverse current for different bias voltages were performed at temperatures of -32 ° C, -27 ° C and -23 ° C. The sensors were irradiated with reactor neutrons in Ljubljana to fluences ranging from 2 × 1014neq /cm2 to 2 × 1016neq /cm2. The measurements were performed directly after irradiation and after 10 and 30 days of room temperature annealing. The aim of the study presented in this paper is to investigate the reverse current of silicon sensors for high fluences of up to 2 × 1016neq /cm2 and compare the measurements to the parametrization models.

Radiation Hard Silicon Photonics Mach-Zehnder Modulator for HEP applications: all-Synopsys Sentaurus™ Pre-Irradiation Simulation

CERN Document Server

Cammarata, Simone

2017-01-01

Silicon Photonics may well provide the opportunity for new levels of integration between detectors and their readout electronics. This technology is thus being evaluated at CERN in order to assess its suitability for use in particle physics experiments. In order to check the agreement with measurements and the validity of previous device simulations, a pure Synopsys Sentaurus™ simulation of an un-irradiated Mach-Zehnder silicon modulator has been carried out during the Summer Student project.

Proton-irradiation technology for high-frequency high-current silicon welding diode manufacturing

International Nuclear Information System (INIS)

Lagov, P B; Drenin, A S; Zinoviev, M A

2017-01-01

Different proton irradiation regimes were tested to provide more than 20 kHz-frequency, soft reverse recovery “snap-less” behavior, low forward voltage drop and leakage current for 50 mm diameter 7 kA/400 V welding diode Al/Si/Mo structure. Silicon diode with such parameters is very suitable for high frequency resistance welding machines of new generation for robotic welding. (paper)

LHCb: Installation and operation of the LHCb Silicon Tracker detector

CERN Multimedia

Esperante Pereira, D

2009-01-01

The LHCb experiment has been designed to perform high-precision measurements of CP violation and rare decays of B hadrons. The construction and installation phases of the Silicon Tracker (ST) of the experiment were completed by early summer 2008. The LHCb Silicon Tracker sums up to a total sensitive area of about 12 m^2 using silicon micro-strip technology and withstands charged particle fluxes of up to 5 x 10^5cm^−2s^−1. We will report on the preparation of the detectors for the first LHC beams. Selected results from the commissioning in LHCb are shown, including the first beam-related events accumulated during LHC injection tests in September 2008. Lessons are drawn from the experience gathered during the installation and commissioning.

Silicon position-sensitive detectors for the Helios (NA 34) experiment

Energy Technology Data Exchange (ETDEWEB)

Engels, E Jr; Mani, S; Manns, T; Plants, D; Shepard, P F; Thompson, J A; Tosh, R; Chand, T; Shivpuri, R; Baker, W

1987-01-15

The design construction and testing of X-Y tracking modules for a silicon microstrip vertex detector for use in Fermilab experiment E706 is discussed. A successful adaptation of various technologies, essential for instrumenting this class of detectors at a university laboratory is described. Emphasis is placed on considerable cost reduction, design flexibiity and more rapid turnover with a view toward large detectors for the future.

Silicon position sensitive detectors for the Helios (NA 34) experiment

Energy Technology Data Exchange (ETDEWEB)

Engels, E Jr; Mani, S; Manns, T; Plants, D; Shepard, P F; Thompson, J A; Tosh, R; Chand, T; Shivpuri, R; Baker, W

1987-01-15

The design construction and testing of X-Y tracking modules for a silicon microstrip vertex detector for use in Fermilab experiment E706 is discussed. A successful adaptation of various technologies, essential for instrumenting this class of detectors at a university laboratory is described. Emphasis is placed on considerable cost reduction, design flexibiity and more rapid turnover with a view toward large detectors for the future.

Theoretical and experimental study of microstrip-to-slot line uniplanar transition

Science.gov (United States)

Yook, Jong-Gwan; Dib, Nihad I.; Katehi, Linda P. B.; Simons, Rainee N.; Taub, Susan R.

1994-05-01

Recent advances in MMCI technology make it possible to construct transitions from CPW-to-microstrip with via hole, microstrip-to-slot line and microshield line-to-CPW all of which have potential applications in the feed network of antennas. In this study we investigate the characteristics of the microstrip-to-slot line uniplanar transition using the finite element methods (FEM) and finite difference time domain (FDTD) techniques, and compared the theoretical results with the measurements. In both cases, the results agree with the measurements within a few percent.

Development of Technique for Testing the Long-Term Stability of Silicon Microstrip Detectors

International Nuclear Information System (INIS)

Kosinov, A.V.; Maslov, N.I.; Naumov, S.V.; Ovchinnik, V.D.; Starodubtsev, A.F.; Vasiliev, G.P.; Yalovenko, V.I.; Bosisio, L.

2006-01-01

An automatic multi-channel set-up prototype for simultaneous testing of the Long-Term Stability (LTS) of more than ten detectors is described. The Inner Tracking System of the ALICE experiment will include about two thousand Double-sided Microstrip Detectors (DSMD). Efficient automatic measurement techniques are crucial for the LTS test, because the corresponding test procedure should be performed on each detector and requires long time, at least two days. By using special adapters for supporting and connecting the bare DSMDs, failing detectors can be screened out before module assembly, thus minimizing the cost. Automated probe stations developed for a special purpose or for microelectronics industry are used for measuring physical static DSMD characteristics and check good-to-bad elements ratio for DSMD. However, automated (or semi-automatic)test benches for studying LTS or testing DSMD long-term stability before developing a detecting module are absent

A New Defected Ground Structure for Different Microstrip Circuit Applications

Directory of Open Access Journals (Sweden)

S. Das

2007-04-01

Full Text Available In this paper, a microstrip transmission line combined with a new U-headed dumb-bell defected ground structure (DGS is investigated. The proposed DGS of two U-shape slots connected by a thin transverse slot is placed in the ground plane of a microstrip line. A finite cutoff frequency and attenuation pole is observed and thus, the equivalent circuit of the DGS unit can be represented by a parallel LC resonant circuit in series with the transmission line. A two-cell DGS microstrip line yields a better lowpass filtering characteristics. The simulation is carried out by the MoM based IE3D software and in the experimental measurements a vector network analyzer is used. The effects of the transverse slot width and the distance between arms of the U-slot on the filter response curve are studied. This DGS is utilized for different microstrip circuit applications. The DGS is placed in the ground of a capacitive loaded microstrip line and a very low cutoff frequency is obtained. The DGS is adopted under the coupled lines of a parallel line coupler and an improvement in coupling coefficient is noticed. The proposed DGS is also incorporated in the ground plane under the feed lines and the coupled lines of a bandpass filter to improve separately the stopband and passband performances.

Production and test of the LHCf microstrip silicon system

International Nuclear Information System (INIS)

Bonechi, L.; Adriani, O.; Bongi, M.; Castellini, G.; D'Alessandro, R.; Faus, A.; Haguenauer, M.; Itow, Y.; Kasahara, K.; Macina, D.; Mase, T.; Masuda, K.; Matsubara, Y.; Matsumoto, H.; Menjo, H.; Mizuishi, M.; Muraki, Y.; Papini, P.; Perrot, A.L.; Ricciarini, S.

2008-01-01

After a preliminary installation test, successfully performed in 2007, both the detectors of the LHCf experiment are now ready to be installed at the CERN LHC accelerator for the first physics run. A beam test at SPS in September 2007 allowed to verify the performance of the apparata. Production and test of the silicon tracker developed for one of them are shortly discussed in this work.

Evaluation of neutron irradiated near-stoichiometric silicon carbide fiber composites

International Nuclear Information System (INIS)

Snead, L.L.; Katoh, Y.; Kohyama, A.; Bailey, J.L.; Vaughn, N.L.; Lowden, R.A.

2000-01-01

Composites have been fabricated by chemical vapor infiltration of silicon carbide (SiC) into SiC-based fiber preforms. Fibers were Ceramic Grade Nicalon TM , Hi-Nicalon TM and Hi-Nicalon TM Type-S. Results are presented for two parallel studies on the effects of neutron irradiation on these materials. In the first study, neutron irradiation induced changes in mechanical properties, as measured by bend testing, for Hi-Nicalon TM fiber materials of varied interphase structures is measured. Results indicate that both the Ceramic Grade Nicalon TM and Hi-Nicalon TM materials degrade substantially under irradiation, though the higher oxygen content Ceramic Grade fiber degrades more rapidly and more substantially. Of the three interfaces studied in the Hi-Nicalon TM system, the multilayer SiC is the most radiation resistant. At a dose of ∼1 dpa the mechanical property degradation of the Hi-Nicalon TM composite is consistent with a fiber densification-induced debonding. At a dose of 10 dpa the properties continue to degrade raising the question of degradation in the CVD SiC matrix as well. Low-dose results on the Hi-Nicalon TM Type-S fabricated material are encouraging, as they appear to not lose, and perhaps slightly increase, in ultimate bend strength. This result is consistent with the supposition that as the oxygen content in SiC-based fibers is reduced, the irradiation stability and hence composite performance under irradiation will improve

Commissioning and Performance of the LHCb Silicon Tracker

CERN Multimedia

van Tilburg, J; Buechler, A; Bursche , A; Chiapolini, N; Elsaesser, C; Hangartner, V; Salzmann, C; Steiner, S; Steinkamp, O; Staumann, U; Tobin, M; Vollhardt, A; Bay, A; Bettler, M O; Blanc, F; Bressieux, J; Conti, G; Fave, V; Frei, R; Gauvin, N; Gonzalez, R; Haefeli, G; Hicheur, A; Keune, A; Luisier, J; Muresan, R; Nakada, T; Needham, M; Nicolas, L; Knecht, M; Perrin, A; Potterat, C; Schneider, O; Tran, M; Aquines Gutierrez, O; Bauer, C; Britsch, M; Hofmann, W; Maciuc, F; Schmelling, M; Voss, H; Adeva, B; Esperante, D; Fungueiriño Pazos, J; Gallas, A; Pazos-Alvarez, A; Pérez-Trigo, E; Pló Casasús, M; Rogríguez Pérez, P; Saborido, J; Vázquez, P; Iakovenko, V; Okhrimenko, O; Pugatch, V

2010-01-01

The LHCb Silicon Tracker is a silicon micro-strip detector with a sensitive area of 12 m$^2$ and a total of 272k readout channels. The Silicon Tracker consists of two parts that use different detector modules. The detector installation was completed by early summer 2008 and the commissioning without beam has reached its finals stage, successfully overcoming most of the encountered problems. Currently, the detector has more than 99% of the channels fully functioning. Commissioning with particles has started using beam-induced events from the LHC injection tests in 2008 and 2009. These events allowed initial studies of the detector performance. Especially, the detector modules could be aligned with an accuracy of about 20 $\\mu$m. Furthermore, with the first beam collisions that took place end of 2009 we could further study the performance and improve the alignment of the detector.

Excitation of propagating magnetization waves by microstrip antennas

Science.gov (United States)

Dmitriev, V. F.; Kalinikos, B. A.

1988-11-01

We discuss the self-consistent theory of excitation of dipole-exchange magnetization waves by microstrip antennas in a metal-dielectric-ferrite-dielectric-metal stratified structure, magnetized under an arbitrary angle to the surface. Spin-wave Green's functions are derived, describing the response of the spin-system to a spatially inhomogeneous varying magnetic field. The radiative resistance of microstrip antenna is calculated. In this case the distribution of surface current density in the antenna is found on the basis of the analytic solution of a singular integral equation. The nature of the effect of metallic screens and redistributed surface current densities in the antenna on the frequency dependence of the resistive radiation is investigated. Approximate relations are obtained, convenient for practical calculations of radiative resistance of microstrip antennas both in a free and in a screened ferromagnetic film. The theoretical calculations are verified by data of experiments carried out on monocrystalline films of iron-yttrium garnet.

Method for analyzing passive silicon carbide thermometry with a continuous dilatometer to determine irradiation temperature

Science.gov (United States)

Campbell, Anne A.; Porter, Wallace D.; Katoh, Yutai; Snead, Lance L.

2016-03-01

Silicon carbide is used as a passive post-irradiation temperature monitor because the irradiation defects will anneal out above the irradiation temperature. The irradiation temperature is determined by measuring a property change after isochronal annealing, i.e., lattice spacing, dimensions, electrical resistivity, thermal diffusivity, or bulk density. However, such methods are time-consuming since the steps involved must be performed in a serial manner. This work presents the use of thermal expansion from continuous dilatometry to calculate the SiC irradiation temperature, which is an automated process requiring minimal setup time. Analysis software was written that performs the calculations to obtain the irradiation temperature and removes possible user-introduced error while standardizing the analysis. This method has been compared to an electrical resistivity and isochronal annealing investigation, and the results revealed agreement of the calculated temperatures. These results show that dilatometry is a reliable and less time-intensive process for determining irradiation temperature from passive SiC thermometry.

Changing of micromorphology of silicon-on-sapphire epitaxial layer surface at irradiation by subthreshold energy X-radiation

CERN Document Server

Kiselev, A N; Skupov, V D; Filatov, D O

2001-01-01

The morphology of silicon-on-sapphire epitaxial layer surface after pulse irradiation by the X-rays with the energy of <= 140 keV is studied. The study on the irradiated material surface is carried out by the methods of the atomic force microscopy and ellipsometry. The average roughness value after irradiation constitutes 7 nm. The change in the films surface microrelief occurs due to reconstruction of their dislocation structure under the action of elastic waves, originating in the X radiation

Change of mechanical properties of irradiated silicon iron in dependence of preliminary deformation

International Nuclear Information System (INIS)

Chirkina, L.A.; Okovit, V.S.; Khinkis, B.A.

1979-01-01

Presented are the data on the influence of the 225 MeV electron irradiation on flow limit and specific elongation of silicon iron specimens preliminary deformed by slipping and twinning. The irradiaton was carried out at the temperature up to 350 K with integral dose up to 7x10 18 el/cm 2 . The specimens were tested in the temperature range of 4-450 K. It is found that the ductile brittle transition temperature Tsub(c) and plastic deformation mode of the irradiated material heavily depends on the preliminary deformation mode. The irradiation of specimens deformed by slipping leads to the increase in transition temperature (Tsub(c)) by 80 deg and it reaches 420 K. The preliminary deformation by twinning results in the Tsub(c) increase up to 320 K

Thick silicon microstrip detectors simulation for PACT: Pair and Compton Telescope

Science.gov (United States)

Khalil, M.; Laurent, P.; Lebrun, F.; Tatischeff, V.; Dolgorouky, Y.; Bertoli, W.; Breelle, E.

2016-11-01

PACT is a space borne Pair and Compton Telescope that aims to make a sensitive survey of the gamma-ray sky between 100 keV and 100 MeV. It is based upon two main components: a silicon-based gamma-ray tracker and a crystal-based calorimeter. In this paper we will explain the imaging technique of PACT as a Multi-layered Compton telescope (0.1-10 MeV) and its major improvements over its predecessor COMPTEL. Then we will present a simulation study to optimize the silicon tracker of PACT. This tracker is formed of thousands of identical silicon double sided strip detectors (DSSDs). We have developed a simulation model (using SILVACO) to simulate the DSSD performance while varying its thickness, impurity concentration of the bulk material, electrode pitch, and electrode width. We will present a comprehensive overview of the impact of each varied parameter on the DSSD performance, in view of the application to PACT. The considered DSSD parameters are its depletion voltage, capacitance, and leakage current. After the selection of the PACT DSSD, we will present a simulation of the performance of the PACT telescope in the 0.1-10 MeV range.

Thick silicon microstrip detectors simulation for PACT: Pair and Compton Telescope

International Nuclear Information System (INIS)

Khalil, M.; Laurent, P.; Lebrun, F.; Tatischeff, V.; Dolgorouky, Y.; Bertoli, W.; Breelle, E.

2016-01-01

PACT is a space borne Pair and Compton Telescope that aims to make a sensitive survey of the gamma-ray sky between 100 keV and 100 MeV. It is based upon two main components: a silicon-based gamma-ray tracker and a crystal-based calorimeter. In this paper we will explain the imaging technique of PACT as a Multi-layered Compton telescope (0.1–10 MeV) and its major improvements over its predecessor COMPTEL. Then we will present a simulation study to optimize the silicon tracker of PACT. This tracker is formed of thousands of identical silicon double sided strip detectors (DSSDs). We have developed a simulation model (using SILVACO) to simulate the DSSD performance while varying its thickness, impurity concentration of the bulk material, electrode pitch, and electrode width. We will present a comprehensive overview of the impact of each varied parameter on the DSSD performance, in view of the application to PACT. The considered DSSD parameters are its depletion voltage, capacitance, and leakage current. After the selection of the PACT DSSD, we will present a simulation of the performance of the PACT telescope in the 0.1–10 MeV range.

Thick silicon microstrip detectors simulation for PACT: Pair and Compton Telescope

Energy Technology Data Exchange (ETDEWEB)

Khalil, M., E-mail: khalilmohammad@hotmail.com [APC Laboratory, 10rue Alice Domon et Léonie Duquet, 75205 Paris Cedex 13 (France); Laurent, P.; Lebrun, F. [APC Laboratory, 10rue Alice Domon et Léonie Duquet, 75205 Paris Cedex 13 (France); CEA, Centre de Saclay, 91191 Gif-Sur-Yvette Cedex (France); Tatischeff, V. [CSNSM, IN2P3/CNRSand Paris-Sud University, 91405 Orsay Campus (France); Dolgorouky, Y.; Bertoli, W.; Breelle, E. [APC Laboratory, 10rue Alice Domon et Léonie Duquet, 75205 Paris Cedex 13 (France)

2016-11-01

PACT is a space borne Pair and Compton Telescope that aims to make a sensitive survey of the gamma-ray sky between 100 keV and 100 MeV. It is based upon two main components: a silicon-based gamma-ray tracker and a crystal-based calorimeter. In this paper we will explain the imaging technique of PACT as a Multi-layered Compton telescope (0.1–10 MeV) and its major improvements over its predecessor COMPTEL. Then we will present a simulation study to optimize the silicon tracker of PACT. This tracker is formed of thousands of identical silicon double sided strip detectors (DSSDs). We have developed a simulation model (using SILVACO) to simulate the DSSD performance while varying its thickness, impurity concentration of the bulk material, electrode pitch, and electrode width. We will present a comprehensive overview of the impact of each varied parameter on the DSSD performance, in view of the application to PACT. The considered DSSD parameters are its depletion voltage, capacitance, and leakage current. After the selection of the PACT DSSD, we will present a simulation of the performance of the PACT telescope in the 0.1–10 MeV range.

Effect of irradiation temperature and initial crystal doping level on defect creation efficiency in silicon

International Nuclear Information System (INIS)

Korshunov, F.P.; Markevich, V.P.; Medvedeva, I.F.; Murin, L.I.

1990-01-01

The defect creation processes in n-type silicon irradiated by 60 Co gamma-rays or fast electrons (E = 4 MeV) have been investigated. Using electrical measurements the dependences of introduction efficiencies of the main radiation defects (A-, E-centres, carbon-related complexes) on the irradiation temperature (T irr = 77-470 K) and material doping level (N h = 2 x 10 12 - 2 x 10 15 cm -3 ) are obtained. It is shown that the efficiency of these defects formation is conditioned by the probability of the Frenkel pairs separation and depends strongly on the Fermi level position in crystals being irradiated. 9 refs.; 3 figs.; 1 tab

Perturbation approach to design of circularly polarised microstrip antennas

Science.gov (United States)

Lo, Y. T.; Richards, W. F.

1981-05-01

One of the most interesting applications of microstrip antennas is its use for transmitting or receiving circularly polarized (CP) waves. A description is given of a simple but accurate method to determine the critical dimensions needed to produce circular polarization for nearly square and nearly circular microstrip antennas. Shen (1981) in connection with the determination of the proper dimensions of an elliptical patch CP microstrip antenna first expressed the modal field in terms of Mathieu functions. To avoid the complicated numerical computation of the Mathieu functions, he approximated these functions in terms of Bessel functions. It is pointed out that the computation of Mathieu functions, or their approximate expressions can be avoided altogether if a perturbation method is applied to find the resonant frequencies of the two orthogonal modes. The implementation of this approach is demonstrated.

Dual-scale nanoripple/nanoparticle-covered microspikes on silicon by femtosecond double pulse train irradiation in water

Energy Technology Data Exchange (ETDEWEB)

Meng, Ge; Jiang, Lan [Laser Micro/Nano Fabrication Laboratory, School of Mechanical Engineering, Beijing Institute of Technology, Beijing 100081 (China); Li, Xin, E-mail: lixin02@bit.edu.cn [Laser Micro/Nano Fabrication Laboratory, School of Mechanical Engineering, Beijing Institute of Technology, Beijing 100081 (China); Xu, Yongda; Shi, Xuesong; Yan, Ruyu [Laser Micro/Nano Fabrication Laboratory, School of Mechanical Engineering, Beijing Institute of Technology, Beijing 100081 (China); Lu, Yongfeng [Department of Electrical Engineering, University of Nebraska-Lincoln, Lincoln, NE 68588-0511 (United States)

2017-07-15

Highlights: • A simple method to fabricate dual-scale structures on silicon is proposed. • Nanoripple-covered or nanoparticle-covered microspikes are obtained on Si firstly. • They are obtained by temporally-shaped fs laser one-step irradiation in water. • Their application in SERS was proved with a high sensitivity of up to 10{sup 8}. - Abstract: Novel dual-scale structures were obtained by femtosecond double pulse train (subpulse delay Δt > 0 ps) one-step irradiating silicon in water. The dual-scale structures consist of microspikes of ∼2 μm width and ∼0.5 μm height, and nanoripples with a mean period of 146 nm or nanoparticles with a mean diameter of 90 nm which entirely cover on the microspikes, for linearly polarized or circularly polarized femtosecond laser respectively. The formation of dual-scale structures involves the following processes: (1) Continuously laser energy deposited at femtosecond to picosecond timescales within silicon surfaces and central regions, will result in enhanced capillary waves and thinner melted silicon layers. Hence, the microspikes can be induced at laser fluences below ablation threshold; (2) Later (>500–800 pulses), a mass of debris and bubbles produced will lead to the remarkably and uniformly scattering or shielding of subsequent incident laser energy. Hence, the nanostructures can be induced. The novel structures exhibit high-sensitive surface enhanced Raman scattering with an enhancement factor of 10{sup 8} for Rhodamine 6G detecting. Besides, the novel structures have application potentials in improving the silicon hydrophobicity, antireflection, etc.

The DAMPE silicon tungsten tracker

CERN Document Server

Gallo, Valentina; Asfandiyarov, R; Azzarello, P; Bernardini, P; Bertucci, B; Bolognini, A; Cadoux, F; Caprai, M; Domenjoz, M; Dong, Y; Duranti, M; Fan, R; Franco, M; Fusco, P; Gargano, F; Gong, K; Guo, D; Husi, C; Ionica, M; Lacalamita, N; Loparco, F; Marsella, G; Mazziotta, M N; Mongelli, M; Nardinocchi, A; Nicola, L; Pelleriti, G; Peng, W; Pohl, M; Postolache, V; Qiao, R; Surdo, A; Tykhonov, A; Vitillo, S; Wang, H; Weber, M; Wu, D; Wu, X; Zhang, F; De Mitri, I; La Marra, D

2017-01-01

The DArk Matter Particle Explorer (DAMPE) satellite has been successfully launched on the 17th December 2015. It is a powerful space detector designed for the identification of possible Dark Matter signatures thanks to its capability to detect electrons and photons with an unprecedented energy resolution in an energy range going from few GeV up to 10 TeV. Moreover, the DAMPE satellite will contribute to a better understanding of the propagation mechanisms of high energy cosmic rays measuring the nuclei flux up to 100 TeV. DAMPE is composed of four sub-detectors: a plastic strip scintillator, a silicon-tungsten tracker-converter (STK), a BGO imaging calorimeter and a neutron detector. The STK is made of twelve layers of single-sided AC-coupled silicon micro-strip detectors for a total silicon area of about 7 $m^2$ . To promote the conversion of incident photons into electron-positron pairs, tungsten foils are inserted into the supporting structure. In this document, a detailed description of the STK constructi...

Silicon Strip Detectors for ATLAS at the HL-LHC Upgrade

CERN Document Server

Hara, K; The ATLAS collaboration

2012-01-01

present ATLAS silicon strip tracker (SCT) and transition radiation tracker(TRT) are to be replaced with new silicon strip detectors as part of the Inner Tracker System (ITK) for the Phase-II upgrade of the Large Hadron Collider, HL-LHC. We have carried out intensive R&D programs based on n+-on-p microstrip detectors to fabricate improved radiation hard strip detectors that can survive the radiation levels corresponding to the integrated luminosity of up to 3000 fb−1. We describe the main specifications for this year’s sensor fabrication and the related R&D results, followed by a description of the candidate schema for module integration.

Wireless OAM transmission system based on elliptical microstrip patch antenna.

Science.gov (United States)

Chen, Jia Jia; Lu, Qian Nan; Dong, Fei Fei; Yang, Jing Jing; Huang, Ming

2016-05-30

The multiplexing transmission has always been a focus of attention for communication technology. In this paper, the radiation characteristics of circular microstrip patch antenna was firstly analyzed based on cavity model theory, and then spiral beams carrying orbital angular momentum (OAM) were generated, using elliptical microstrip patch antenna, with a single feed probe instead of a standard circular patch with two feedpoints. Moreover, by combining the proposed elliptic microstrip patch antenna with Universal Software Radio Peripheral (USRP), a wireless OAM transmission system was established and the real-time transmission of text, image and video in a real channel environment was realized. Since the wireless OAM transmission has the advantage of good safety and high spectrum utilization efficiency, this work has theoretical significance and potential application.

Radiation damage and defect behavior in proton irradiated lithium-counterdoped n+p silicon solar cells

Science.gov (United States)

Stupica, John; Goradia, Chandra; Swartz, Clifford K.; Weinberg, Irving

1987-01-01

Two lithium-counterdoped n+p silicon solar cells with different lithium concentrations were irradiated by 10-MeV protons. Cell performance was measured as a function of fluence, and it was found that the cell with the highest concentration of lithium had the highest radiation resistance. Deep level transient spectroscopy which showed two deep level defects that were lithium related. Relating the defect energy levels obtained from this study with those from earlier work using 1-MeV electron irradiation shows no correlation of the defect energy levels. There is one marked similarity: the absence of the boron-interstitial-oxygen-interstitial defect. This consistency strengthens the belief that lithium interacts with oxygen to prevent the formation of the boron interstitial-oxygen interstitial defect. The results indicate that, in general, addition of lithium in small amounts to the p-base of a boron doped silicon solar cell such that the base remains p-type, tends to increase the radiation resistance of the cell.

Study of charge transport in silicon detectors: Non-irradiated and irradiated

International Nuclear Information System (INIS)

Leroy, C.; Roy, P.; Casse, G.; Glaser, M.; Grigoriev, E.; Lemeilleur, F.

1999-01-01

The electrical characteristics of silicon detectors (standard planar float zone and MESA detectors) as a function of the particle fluence can be extracted by the application of a model describing the transport of charge carriers generated in the detectors by ionizing particles. The current pulse response induced by α and β particles in non-irradiated detectors and detectors irradiated up to fluences PHI ∼ 3 · 10 14 particles/cm 2 is reproduced via this model: i) by adding a small n-type region 15 μm deep on the p + side for the detectors at fluences beyond the n to p-type inversion and ii) for the MESA detectors, by considering one additional dead layer of 14 μm (observed experimentally) on each side of the detector, and introducing a second (delayed) component to the current pulse response. For both types of detectors, the model gives mobilities decreasing linearily up to fluences of about 5·10 13 particles/cm 2 and converging, beyond, to saturation values of about 1050 cm 2 /Vs and 450 cm 2 /Vs for electrons and holes, respectively. At a fluence PHI ∼ 10 14 particles/cm 2 (corresponding to about ten years of operation at the CERN-LHC), charge collection deficits of about 14% for β particles, 25% for α particles incident on the front and 35% for α particles incident on the back of the detector are found for both type of detectors

Design,construction and commissioning of a cylinder of double-sided silicon micro-strips detectors for the Star experiment at RHIC; Developpement et mise en oeuvre de detecteurs silicium a micropistes pour l'experience star

Energy Technology Data Exchange (ETDEWEB)

Guedon, M

2005-05-15

This study has been performed in the frame of quark gluon plasma physics research in the STAR experiment at RHIC. It deals with the design, the construction and the commissioning of a barrel of silicon-strip detectors (SSD). Added to the Silicon Vertex Tracker (SVT) of the STAR detector, it extends the capabilities of track reconstruction for charged particles emitted in ultra-relativistic heavy-ion collisions. It also contributes to the general study of the quark-gluon plasma production undertaken at STAR. The SSD is a cylinder of 1 m long and of 23 cm radius, and it is composed of 320 compact identical modules. Each module includes one double-sided silicon micro-strip detector, 12 readout chips ALICE 128C, 12 TAB ribbons, 2 COSTAR control chips and 2 hybrids supporting all the components. The document explains why the SSD is an important and relevant element, and justifies the technological choices as well as their validation by in-beam characterization. All component functionalities, characteristics and test procedures are presented. The data and test results are stored in a database for tracing purpose. Component and module production is described. Two parallel studies have been performed, analysed and described. One on the temperature dependence of the module performances and the other one on the optimal adjustments of the analogue blocks inside the ALICE 128C chip. The SSD installation on the RHIC site as well as the commissioning are presented together with the first data takings. (author)

Alloys of nickel-iron and nickel-silicon do not swell under fast neutron irradiation

International Nuclear Information System (INIS)

Silvestre, G.; Silvent, A.; Regnard, C.; Sainfort, G.

1975-01-01

This research is concerned with the effect of fast-neutron irradiation on the swelling of nickel and nickel alloys. Ni-Fe (0-60at%Fe) and Ni-Si (0-8at%Si) were studied, and the fluences were in the range 10 20 -4.3x10 22 n/cm 2 . In dilute alloys, the added elements are dissolved and reduce swelling, silicon being particularly effective. In more concentrated alloys, irradiation of Ni-Fe and Ni-Si alloys brings about the formation of plate-shaped precipitates of Ni 3 X and these alloys do not swell. (Auth.)

Monitoring of the morphologic reconstruction of deposited ablation products in laser irradiation of silicon

Directory of Open Access Journals (Sweden)

Vlasova M.

2008-01-01

Full Text Available Using electron microscopy, atomic force microscopy, X-ray microanalysis, and IR spectroscopy, it was established that, in the regime of continuous laser irradiation of silicon at P = 170 W in different gaseous atmospheres with an oxygen impurity, SiOx composite films with a complex morphology form. The main components of ablation products are clusters that form during flight of ablation products and as a result of separation of SiOx-clusters from the zone of the irradiation channel. The roughness and density of the films depend on the heating temperature of the target surface and the type of deposited clusters.

Charge collection properties of heavily irradiated epitaxial silicon detectors

International Nuclear Information System (INIS)

Kramberger, G.; Cindro, V.; Dolenc, I.; Fretwurst, E.; Lindstroem, G.; Mandic, I.; Mikuz, M.; Zavrtanik, M.

2005-01-01

Detectors processed on epitaxial silicon seem to be a viable solution for the extreme radiation levels in the innermost layers of tracking detectors at upgraded LHC (SLHC). A set of epitaxial pad detectors of 50 and 75μm thicknesses (ρ=50Ωcm) was irradiated with 24GeV/c protons and reactor neutrons up to equivalent fluences of 10 16 cm -2 . Charge collection for minimum ionizing electrons from a 90 Sr source was measured using a charge sensitive preamplifier and a 25ns shaping circuit. The dependence of collected charge on annealing time and operation temperature was studied. Results were used to predict the performance of fine pitch pixel detectors proposed for SLHC

Charge collection properties of heavily irradiated epitaxial silicon detectors

Energy Technology Data Exchange (ETDEWEB)

Kramberger, G. [Institute Jozef Stefan, Jamova 39, SI-1111 Ljubljana (Slovenia)]. E-mail: Gregor.Kramberger@ijs.si; Cindro, V. [Institute Jozef Stefan, Jamova 39, SI-1111 Ljubljana (Slovenia); Dolenc, I. [Institute Jozef Stefan, Jamova 39, SI-1111 Ljubljana (Slovenia); Fretwurst, E. [University of Hamburg, Institut fuer Experimentalphysik, Luruper Chaussee 149, D-22761 Hamburg (Germany); Lindstroem, G. [University of Hamburg, Institut fuer Experimentalphysik, Luruper Chaussee 149, D-22761 Hamburg (Germany); Mandic, I. [Institute Jozef Stefan, Jamova 39, SI-1111 Ljubljana (Slovenia); Mikuz, M. [Institute Jozef Stefan, Jamova 39, SI-1111 Ljubljana (Slovenia); Zavrtanik, M. [Institute Jozef Stefan, Jamova 39, SI-1111 Ljubljana (Slovenia)

2005-12-01

Detectors processed on epitaxial silicon seem to be a viable solution for the extreme radiation levels in the innermost layers of tracking detectors at upgraded LHC (SLHC). A set of epitaxial pad detectors of 50 and 75{mu}m thicknesses ({rho}=50{omega}cm) was irradiated with 24GeV/c protons and reactor neutrons up to equivalent fluences of 10{sup 16}cm{sup -2}. Charge collection for minimum ionizing electrons from a {sup 90}Sr source was measured using a charge sensitive preamplifier and a 25ns shaping circuit. The dependence of collected charge on annealing time and operation temperature was studied. Results were used to predict the performance of fine pitch pixel detectors proposed for SLHC.

DLTS spectra of silicon diodes with p+-n-junction irradiated with high energy krypton ions

Directory of Open Access Journals (Sweden)

Nikolai A. Poklonski

2016-06-01

Full Text Available p+-n-Diodes have been studied. The diodes were manufactured on wafers (thickness 460 μm, (111 plane of uniformly phosphorus doped float-zone-grown single-crystal silicon. The resistivity of silicon was 90 Ω cm and the phosphorus concentration was 5×1013 cm−3. The diodes were irradiated with 250 MeV krypton ions. The irradiation fluence was 108 cm−2. Deep-level transient spectroscopy (DLTS was used to examine the defects induced by high energy krypton ion implantation. The DLTS spectra were recorded at a frequency of 1 MHz in the 78–290 K temperature range. The capacity-voltage characteristics have been measured at a reverse bias voltage from 0 to −19 V at a frequency of 1 MHz. We show that the main irradiation-induced defects are A-centers and divacancies. The behavior of DLTS spectra in the 150–260 K temperature range depends essentially on the emission voltage Ue. The variation of Ue allows us to separate the contributions of different defects into the DLTS spectrum in the 150–260 K temperature range. We show that, in addition to A-centers and divacancies, irradiation produces multivacancy complexes with the energy level Et = Ec−(0.5±0.02 eV and an electron capture cross section of ~4×10–13 cm2.

Resistivity measurements on the neutron irradiated detector grade silicon materials

Energy Technology Data Exchange (ETDEWEB)

Li, Zheng

1993-11-01

Resistivity measurements under the condition of no or low electrical field (electrical neutral bulk or ENB condition) have been made on various device configurations on detector grade silicon materials after neutron irradiation. Results of the measurements have shown that the ENB resistivity increases with neutron fluence ({Phi}{sub n}) at low {phi}{sub n} (<10{sup 13} n/cm{sup 2}) and saturates at a value between 300 and 400 k{Omega}-cm at {phi}{sub n} {approximately}10{sup 13} n/cm{sup 2}. Meanwhile, the effective doping concentration N{sub eff} in the space charge region (SCR) obtained from the C-V measurements of fully depleted p{sup +}/n silicon junction detectors has been found to increase nearly linearly with {phi}{sub n} at high fluences ({phi}{sub n} > 10{sup 13} n/cm{sup 2}). The experimental results are explained by the deep levels crossing the Fermi level in the SCR and near perfect compensation in the ENB by all deep levels, resulting in N{sub eff} (SCR) {ne} n or p (free carrier concentrations in the ENB).

Role of oxygen concentration distribution and microstructure in luminescent properties of laser-irradiated silicon

International Nuclear Information System (INIS)

Zhu, Min; Li, Xiaohong; Li, Guoqiang; Xie, Changxin; Qiu, Rong; Li, Jiawen; Huang, Wenhao

2015-01-01

Graphical abstract: Photoluminescence (PL) of monocrystalline silicon irradiated by femtosecond laser pulses was studied. The visible blue luminescence is observed both from the deionized water and air. The position and shape of emission luminescence peaks in the visible range are same at 330 nm. The PL is confirmed to be not merely induced by the oxygen defects or quantum confinement effects, but is commonly decided by the concentration distribution of SiO x and the depth of the surface microstructure. The PL gets strongest only when depth of the surface microstructure is not deeper and the distribution of the shallow SiO x is more intensive. - Highlights: • Different morphologies and compositions of the surface microstructures are formed. • The SiO x concentration and surface microstructure depth commonly decide the PL. • The PL intensity can be controlled by changing the experimental conditions. - Abstract: We study the photoluminescence (PL) of monocrystalline silicon irradiated by femtosecond laser pulses in different environments (deionized water and air) and energy intensities. The fluorescence spectroscopy measurement results indicate that the visible blue luminescence is observed both from the silicon surfaces ablated in the deionized water and air. The more interesting phenomenon is that the position and shape of the emission luminescence peaks in the visible range are substantially the same at the same excitation wavelength 330 nm. Compared with the granular-like microstructure generated on the silicon surface in air, the smaller and stripe-like microstructure is formed in the deionized water as the field emission scanning electron microscope (FESEM) measures. The results of the energy dispersive spectroscopy (EDS) show that silicon and oxygen is the main elemental composition on laser-induced silicon surfaces, and the oxygen content on the sample surfaces formed in air is nearly four times more than that in the deionized water. The studies confirm

A silicon track trigger for the DOe experiment

International Nuclear Information System (INIS)

Narain, Meenakshi

2000-01-01

The design of a processor to trigger on long-lived particles (e.g. b-quarks) for the DOe experiment at the Fermilab Tevatron is presented. This device reconstructs the trajectory of the charged particles in the DOe tracking system, which consists of a central fiber tracker and a silicon microstrip tracker. The r-phi impact parameter resolution of the fitted tracks is about 40 μm. This enables the identification of the long-lived b-quarks produced in the decays of various particles, e.g. the top quarks, Higgs Boson, techni-particles and other exotic particles produced in pp-bar collisions at the Tevatron. In this report we describe the design of the architecture and algorithms for the Silicon Track Trigger

A silicon track trigger for the DOe experiment

CERN Document Server

Narain, M

2000-01-01

The design of a processor to trigger on long-lived particles (e.g. b-quarks) for the DOe experiment at the Fermilab Tevatron is presented. This device reconstructs the trajectory of the charged particles in the DOe tracking system, which consists of a central fiber tracker and a silicon microstrip tracker. The r-phi impact parameter resolution of the fitted tracks is about 40 mu m. This enables the identification of the long-lived b-quarks produced in the decays of various particles, e.g. the top quarks, Higgs Boson, techni-particles and other exotic particles produced in pp-bar collisions at the Tevatron. In this report we describe the design of the architecture and algorithms for the Silicon Track Trigger.

Impact of irradiations by protons with different energies on silicon sensors

International Nuclear Information System (INIS)

Neubueser, Coralie

2013-06-01

In the frame of the CMS tracker upgrade campaign the radiation damage of oxygenrich n-type silicon pad diodes induced by 23 MeV and 23 GeV protons was investigated. The diodes were manufactured by Hamamatsu Photonics. After irradiation with 1 MeV neutron equivalent fluences between 1 x 10 11 cm -2 and 1.5 x 10 15 cm -2 , the sensors were electrically characterized by means of capacitance-voltage (CV) and current-voltage (IV) measurements. Current pulses recorded by the Transient Current Technique (TCT) and Charge Collection Efficiency (CCE) measurements show a dependence of the bulk damage on the proton energy. At a fluence of Φ eq ∼3 x 10 14 cm -2 oxygen-rich n-type diodes demonstrate clear Space Charge Sign Inversion (SCSI) after 23 MeV proton irradiation. This effect does not appear after the irradiation with 23 GeV protons. Moreover, RD50 pad diodes were irradiated with 23 MeV protons, electrically characterized and compared to results obtained after 23 GeV irradiations. Our previous observation on the energy dependence of the radiation damage could be confirmed. In order to get a deeper understanding of the differences of the radiation induced defects, the Deep Level Transient Spectroscopy (DLTS) and Thermally Stimulated Current Technique (TSC) were utilized. Defects with impact on the space charge could be identified and characterized and it was possible to find some hints for the reason of the SCSI after 23 MeV proton irradiation. Moreover, a dependence on the oxygen concentration of the sensors could be observed.

Charge deep-level transient spectroscopy study of high-energy-electron-beam-irradiated hydrogenated amorphous silicon

NARCIS (Netherlands)

Klaver, A.; Nádaždy, V.; Zeman, M.; Swaaiij, R.A.C.M.M.

2006-01-01

We present a study of changes in the defect density of states in hydrogenated amorphous silicon (a-Si:H) due to high-energy electron irradiation using charged deep-level transient spectroscopy. It was found that defect states near the conduction band were removed, while in other band gap regions the

Operation of heavily irradiated silicon detectors in non-depletion mode

International Nuclear Information System (INIS)

Verbitskaya, E.; Eremin, V.; Ilyashenko, I.; Li, Z.; Haerkoenen, J.; Tuovinen, E.; Luukka, P.

2006-01-01

The non-depletion detector operation mode has generally been disregarded as an option in high-energy physics experiments. In this paper, the non-depletion operation is examined by detailed analysis of the electric field distribution and the current pulse response of heavily irradiated silicon (Si) detectors. The previously reported model of double junction in heavily irradiated Si detector is further developed and a simulation of the current pulse response has been performed. It is shown that detectors can operate in a non-depletion mode due to the fact that the value of the electric field in a non-depleted region is high enough for efficient carrier drift. This electric field originates from the current flow through the detector and a consequent drop of the potential across high-resistivity bulk of a non-depleted region. It is anticipated that the electric field in a non-depleted region, which is still electrically neutral, increases with fluence that improves the non-depleted detector operation. Consideration of the electric field in a non-depleted region allows the explanation of the recorded double-peak current pulse shape of heavily irradiated Si detectors and definition of the requirements for the detector operational conditions. Detailed reconstruction of the electric field distribution gives new information on radiation effects in Si detectors

Study of the effect of neutron and electron irradiations on the low temperature thermal conductivity of germanium and silicon

International Nuclear Information System (INIS)

Vandevyver, M.

1967-06-01

The main results obtained from this work are the following: 1 Neutron irradiation (at 300 deg. K) produces lattice defects in germanium and silicon, and a corresponding very large lowering of the thermal conductivity is observed in the low temperature region (4-300 ). The results obtained have been explained with the help of the following hypotheses: for silicon a scattering of phonons by the stress fields produced by the defects; for germanium, a supplementary scattering of the electron phonon type. 2 Annealing treatments carried out on these materials above 373 deg. K restored the thermal conductivity over the whole temperature range of the measurements (4-300 deg. K); in the case of both germanium and silicon there were two steps in the annealing process. 3 A study of the thermal conductivity of germanium (initially P or N) after an electronic irradiation showed that the scattering of phonons could depend on the state of charge of the defects thus produced. (author) [fr

Charge collection efficiency recovery in heavily irradiated silicon detectors operated at cryogenic temperatures

CERN Document Server

Da Vià, C; Berglund, P; Borchi, E; Borer, K; Bruzzi, Mara; Buontempo, S; Casagrande, L; Chapuy, S; Cindro, V; Dimcovski, Zlatomir; D'Ambrosio, N; de Boer, Wim; Dezillie, B; Esposito, A P; Granat, V; Grigoriev, E; Heijne, Erik H M; Heising, S; Janos, S; Koivuniemi, J H; Konotov, I; Li, Z; Lourenço, C; Mikuz, M; Niinikoski, T O; Pagano, S; Palmieri, V G; Paul, S; Pirollo, S; Pretzl, Klaus P; Ropotar, I; Ruggiero, G; Salmi, J; Seppä, H; Suni, I; Smith, K; Sonderegger, P; Valtonen, M J; Zavrtanik, M

1998-01-01

The charge collection efficiency (CCE) of high resistivity silicon detectors, previously neutron irradiated up to 2*10/sup 15/ n/cm/sup 2/, was measured at different cryogenic temperatures and different bias voltages. In order to $9 study reverse annealing (RA) effects, a few samples were heated to 80 degrees C and kept at room temperature for several months after irradiation. For comparison other samples (NRA) where kept at -10 C after irradiation. The RA and $9 NRA samples, measured at 250 V forward and reverse bias voltage, present a common temperature threshold at 150 K. Below 120 K the CCE is constant and ranges between 55and 65 0.000000or the RA and NRA sample respectively. Similar CCE $9 was measured for a device processed with low resistivity contacts (OHMIC), opening the prospect for a consistent reduction of the cost of large area particle tracking. (7 refs).

Design,construction and commissioning of a cylinder of double-sided silicon micro-strips detectors for the Star experiment at RHIC; Developpement et mise en oeuvre de detecteurs silicium a micropistes pour l'experience star

Energy Technology Data Exchange (ETDEWEB)

Guedon, M

2005-05-15

This study has been performed in the frame of quark gluon plasma physics research in the STAR experiment at RHIC. It deals with the design, the construction and the commissioning of a barrel of silicon-strip detectors (SSD). Added to the Silicon Vertex Tracker (SVT) of the STAR detector, it extends the capabilities of track reconstruction for charged particles emitted in ultra-relativistic heavy-ion collisions. It also contributes to the general study of the quark-gluon plasma production undertaken at STAR. The SSD is a cylinder of 1 m long and of 23 cm radius, and it is composed of 320 compact identical modules. Each module includes one double-sided silicon micro-strip detector, 12 readout chips ALICE 128C, 12 TAB ribbons, 2 COSTAR control chips and 2 hybrids supporting all the components. The document explains why the SSD is an important and relevant element, and justifies the technological choices as well as their validation by in-beam characterization. All component functionalities, characteristics and test procedures are presented. The data and test results are stored in a database for tracing purpose. Component and module production is described. Two parallel studies have been performed, analysed and described. One on the temperature dependence of the module performances and the other one on the optimal adjustments of the analogue blocks inside the ALICE 128C chip. The SSD installation on the RHIC site as well as the commissioning are presented together with the first data takings. (author)

SiO{sub 2} on silicon: behavior under heavy ion irradiation; SiO{sub 2} sur silicium: comportement sous irradiation avec des ions lourds

Energy Technology Data Exchange (ETDEWEB)

Rotaru, C

2004-03-15

Heavy ion irradiation was performed on a-SiO{sub 2} layers deposited on Si. Damage of the surface was studied by means of Atomic Force Microscopy. Hillocks appear for an electronic stopping power higher than 16 keV/nm. The height of the hillocks decreases with the thickness of the oxide layer. Infrared Spectroscopy studies show that the damage threshold for a-SiO{sub 2} is at an electronic stopping power of 2 keV/nm. Therefore it is probable that the origin of the hillocks comes from the silicon layer. This could be explain within the frame of thermal spike model. The theoretical thresholds are 8 keV/nm and 1.8 keV/nm for silicon and a-SiO{sub 2} respectively. Chemical etching after irradiation gives a technical possibility to create nano-pits, whose size and shape can be controlled. Additionally, these structures allowed to determine the AFM tip radius. (author)

Electrical properties of as-grown and proton-irradiated high purity silicon

Energy Technology Data Exchange (ETDEWEB)

Krupka, Jerzy, E-mail: krupka@imio.pw.edu.pl [Institute of Microelectronics and Optoelectronics, Warsaw University of Technology, Koszykowa 75, 00-662 Warsaw (Poland); Karcz, Waldemar [Joint Institute for Nuclear Research, Joliot-Curie 6, 141980 Dubna (Russian Federation); Kamiński, Paweł [Institute of Electronic Materials Technology, Wólczyńska 13, 301-919 Warsaw (Poland); Jensen, Leif [Topsil Semiconductor Materials A/S, Siliciumvej 1, DK-3600 Frederikssund (Denmark)

2016-08-01

The complex permittivity of as-grown and proton-irradiated samples of high purity silicon obtained by the floating zone method was measured as a function of temperature at a few frequencies in microwave spectrum by employing the quasi TE{sub 011} and whispering gallery modes excited in the samples under test. The resistivity of the samples was determined from the measured imaginary part of the permittivity. The resistivity was additionally measured at RF frequencies employing capacitive spectroscopy as well as in a standard direct current experiment. The sample of as-grown material had the resistivity of ∼85 kΩ cm at room temperature. The sample irradiated with 23-MeV protons had the resistivity of ∼500 kΩ cm at 295 K and its behavior was typical of the intrinsic material at room and at elevated temperatures. For the irradiated sample, the extrinsic conductivity region is missing and at temperatures below 250 K hopping conductivity occurs. Thermal cycle hysteresis of the resistivity for the sample of as-grown material is observed. After heating and subsequent cooling of the sample, its resistivity decreases and then slowly (∼50 h) returns to the initial value.

A gas microstrip X-ray detector for soft energy fluorescence EXAFS

CERN Document Server

Smith, A D; Derbyshire, G E; Duxbury, D M; Lipp, J; Spill, E J; Stephenson, R

2001-01-01

Gas microstrip detectors have been previously developed by the particle physics community, where their robustness, compactness and high counting speed have been recognised. These features are particularly attractive to synchrotron radiation use. In this paper, we describe a gas microstrip detector employing multi-element readout and specifically developed for high count rate fluorescence EXAFS at soft X-ray energies below 4 keV.

Impact of irradiations by protons with different energies on silicon sensors

Energy Technology Data Exchange (ETDEWEB)

Neubueser, Coralie

2013-06-15

In the frame of the CMS tracker upgrade campaign the radiation damage of oxygenrich n-type silicon pad diodes induced by 23 MeV and 23 GeV protons was investigated. The diodes were manufactured by Hamamatsu Photonics. After irradiation with 1 MeV neutron equivalent fluences between 1 x 10{sup 11} cm{sup -2} and 1.5 x 10{sup 15} cm{sup -2}, the sensors were electrically characterized by means of capacitance-voltage (CV) and current-voltage (IV) measurements. Current pulses recorded by the Transient Current Technique (TCT) and Charge Collection Efficiency (CCE) measurements show a dependence of the bulk damage on the proton energy. At a fluence of {Phi}{sub eq}{approx}3 x 10{sup 14} cm{sup -2} oxygen-rich n-type diodes demonstrate clear Space Charge Sign Inversion (SCSI) after 23 MeV proton irradiation. This effect does not appear after the irradiation with 23 GeV protons. Moreover, RD50 pad diodes were irradiated with 23 MeV protons, electrically characterized and compared to results obtained after 23 GeV irradiations. Our previous observation on the energy dependence of the radiation damage could be confirmed. In order to get a deeper understanding of the differences of the radiation induced defects, the Deep Level Transient Spectroscopy (DLTS) and Thermally Stimulated Current Technique (TSC) were utilized. Defects with impact on the space charge could be identified and characterized and it was possible to find some hints for the reason of the SCSI after 23 MeV proton irradiation. Moreover, a dependence on the oxygen concentration of the sensors could be observed.

Microstrip microwave band gap structures

Indian Academy of Sciences (India)

The periodic lattice of PTFE–air combination has the dielectric contrast (defined as the ratio between the dielectric constant of the substrate to that of the background, air) of 2.08. At both ends of the microstrip. MBG, two sub-miniature adapter (SMA) coaxial connectors were placed. The measurements as well as theoretical ...

Development of a TSC-Setup for the Characterization of Electron and Hole Traps in Irradiated Silicon Sensors

CERN Document Server

Stricker, Miriam

2015-01-01

For the characterization of radiation damage in silicon detectors a low-noise TSC-Setup was built to analyze charge trapping in the temperature range between 15 K and 250 K. The setup offers the possibility to perform Thermally Stimulated Current (TSC) and IV measurements and also to anneal samples at temperatures up to 180 ◦C. A first annealing study on a proton irradiated silicon pad sensor was performed. This study focuses mainly on the variation of the trap concentration and the results are compared to literature.

Acrylamide graft over silicone rubber tubes by simultaneous irradiation in 60 Co source

International Nuclear Information System (INIS)

Julio, C.A.; Higa, O.Z.

1992-01-01

The synthesis of a hydrogel having silicone rubber tubes as support was carried out through the radiation grafting technique. The best conditions for the grafting development were determined in relation to the monomer and inhibitor concentration, dose rate and irradiation dose. The addition of cupric ions in the process inhibited the acrylamide homo polymerization and enhanced the grafting yield. The water content in the grafted tubes characterized the hydrophilic property of the material. (author)

Breakdown of coupling dielectrics for Si microstrip detectors

International Nuclear Information System (INIS)

Candelori, A.; Paccagnella, A.; Padova Univ.; Saglimbeni, G.

1999-01-01

Double-layer coupling dielectrics for AC-coupled Si microstrip detectors have been electrically characterized in order to determine their performance in a radiation-harsh environment, with a focus on the dielectric breakdown. Two different dielectric technologies have been investigated: SiO 2 /TEOS and SiO 2 /Si 3 N 4 . Dielectrics have been tested by using a negative gate voltage ramp of 0.2 MV/(cm·s). The metal/insulator/Si I-V characteristics show different behaviours depending on the technology. The extrapolated values of the breakdown field for unirradiated devices are significantly higher for SiO 2 /Si 3 N 4 dielectrics, but the data dispersion is lower for SiO 2 /TEOS devices. No significant variation of the breakdown field has been measured after a 10 Mrad (Si) γ irradiation for SiO 2 /Si 3 N 4 dielectrics. Finally, the SiO 2 /Si 3 N 4 DC conduction is enhanced if a positive gate voltage ramp is applied with respect to the negative one, due to the asymmetric conduction of the double-layer dielectric

Quality assurance tests of the CBM silicon tracking system sensors with an infrared laser

Energy Technology Data Exchange (ETDEWEB)

Teklishyn, Maksym [FAIR GmbH, Darmstadt (Germany); KINR, Kyiv (Ukraine); Collaboration: CBM-Collaboration

2016-07-01

Double-sided 300 μm thick silicon microstrip sensors are planned to be used in the Silicon Tracking System (STS) of the future CBM experiment. Different tools, including an infrared laser, are used to induce charge in the sensor medium to study the sensor response. We use present installation to develop a procedure for the sensor quality assurance during mass production. The precise positioning of the laser spot allows to make a clear judgment about the sensor interstrip gap response which provides information about the charge distribution inside the sensor medium. Results are compared with the model estimations.

The DOe Silicon Track Trigger

International Nuclear Information System (INIS)

Steinbrueck, Georg

2003-01-01

We describe a trigger preprocessor to be used by the DOe experiment for selecting events with tracks from the decay of long-lived particles. This Level 2 impact parameter trigger utilizes information from the Silicon Microstrip Tracker to reconstruct tracks with improved spatial and momentum resolutions compared to those obtained by the Level 1 tracking trigger. It is constructed of VME boards with much of the logic existing in programmable processors. A common motherboard provides the I/O infrastructure and three different daughter boards perform the tasks of identifying the roads from the tracking trigger data, finding the clusters in the roads in the silicon detector, and fitting tracks to the clusters. This approach provides flexibility for the design, testing and maintenance phases of the project. The track parameters are provided to the trigger framework in 25 μs. The effective impact parameter resolution for high-momentum tracks is 35 μm, dominated by the size of the Tevatron beam

Characterization of Czochralski Silicon Detectors

OpenAIRE

Luukka, Panja-Riina; Haerkoenen, Jaakko

2012-01-01

This thesis describes the characterization of irradiated and non-irradiated segmenteddetectors made of high-resistivity (>1 kΩcm) magnetic Czochralski (MCZ) silicon. It isshown that the radiation hardness (RH) of the protons of these detectors is higher thanthat of devices made of traditional materials such as Float Zone (FZ) silicon or DiffusionOxygenated Float Zone (DOFZ) silicon due to the presence of intrinsic oxygen (> 5 x1017 cm-3). The MCZ devices therefore present an interesting alter...

Study of the response of a silicon detector irradiated with 1 MeV neutrons; Etude de la reponse d`un detecteur Si irradie par des neutrons de 1 MeV

Energy Technology Data Exchange (ETDEWEB)

Roy, P [Montreal Univ., PQ (Canada). Lab. de Physique Nucleaire

1994-12-31

The author studied the response of an n-type silicon detector irradiated with 1 MeV neutrons at fluences ranging from 0.26x10{sup 13} to 11.19x10{sup 13} neutrons/cm{sup 2}. The response of the irradiated detector to {sup 241}Am alpha particles was measured. 13 refs., 7 figs.

Anisotropy effect of crater formation on single crystal silicon surface under intense pulsed ion beam irradiation

Science.gov (United States)

Shen, Jie; Yu, Xiao; Zhang, Jie; Zhong, Haowen; Cui, Xiaojun; Liang, Guoying; Yu, Xiang; Huang, Wanying; Shahid, Ijaz; Zhang, Xiaofu; Yan, Sha; Le, Xiaoyun

2018-04-01

Due to the induced extremely fast thermal and dynamic process, Intense Pulsed Ion Beam (IPIB) is widely applied in material processing, which can bring enhanced material performance and surface craters as well. To investigate the craters' formation mechanism, a specific model was built with Finite Element Methods (FEM) to simulate the thermal field on irradiated single crystal silicon. The direct evidence for the existence of the simulated 6-fold rotational symmetric thermal distribution was provided by electron microscope images obtained on single crystal silicon. The correlation of the experiment and simulation is of great importance to understand the interaction between IPIB and materials.

Surface potential on gold nanodisc arrays fabricated on silicon under light irradiation

Science.gov (United States)

Ezaki, Tomotarou; Matsutani, Akihiro; Nishioka, Kunio; Shoji, Dai; Sato, Mina; Okamoto, Takayuki; Isobe, Toshihiro; Nakajima, Akira; Matsushita, Sachiko

2018-06-01

This paper proposes Kelvin probe force microscopy (KFM) as a new measurement method of plasmon phenomenon. The surface potential of two arrays, namely, a monomeric array and a tetrameric array, of gold nanodiscs (600 nm diameter) on a silicon substrate fabricated by electron beam lithography was investigated by KFM with the view point of irradiation light wavelength change. In terms of the value of the surface potential, contrasting behaviour, a negative shift in the monomeric disc array and a positive shift in the tetrameric disc array, was observed by light irradiation. This interesting behaviour is thought to be related to a difference in localised plasmons caused by the disc arrangement and was investigated from various viewpoints, including Rayleigh anomalies. Finally, this paper reveals that KFM is powerful not only to investigate the plasmonic behaviour but also to predict the electron transportation.

MULTIOBJECTIVE EVOLUTIONARY ALGORITHMS APPLIED TO MICROSTRIP ANTENNAS DESIGN ALGORITMOS EVOLUTIVOS MULTIOBJETIVO APLICADOS A LOS PROYECTOS DE ANTENAS MICROSTRIP

Directory of Open Access Journals (Sweden)

Juliano Rodrigues Brianeze

2009-12-01

Full Text Available This work presents three of the main evolutionary algorithms: Genetic Algorithm, Evolution Strategy and Evolutionary Programming, applied to microstrip antennas design. Efficiency tests were performed, considering the analysis of key physical and geometrical parameters, evolution type, numerical random generators effects, evolution operators and selection criteria. These algorithms were validated through design of microstrip antennas based on the Resonant Cavity Method, and allow multiobjective optimizations, considering bandwidth, standing wave ratio and relative material permittivity. The optimal results obtained with these optimization processes, were confirmed by CST Microwave Studio commercial package.Este trabajo presenta tres de los principales algoritmos evolutivos: Algoritmo Genético, Estrategia Evolutiva y Programación Evolutiva, aplicados al diseño de antenas de microlíneas (microstrip. Se realizaron pruebas de eficiencia de los algoritmos, considerando el análisis de los parámetros físicos y geométricos, tipo de evolución, efecto de generación de números aleatorios, operadores evolutivos y los criterios de selección. Estos algoritmos fueron validados a través del diseño de antenas de microlíneas basado en el Método de Cavidades Resonantes y permiten optimizaciones multiobjetivo, considerando ancho de banda, razón de onda estacionaria y permitividad relativa del dieléctrico. Los resultados óptimos obtenidos fueron confirmados a través del software comercial CST Microwave Studio.

Multipulse nanosecond laser irradiation of silicon for the investigation of surface morphology and photoelectric properties

Science.gov (United States)

Sardar, Maryam; Chen, Jun; Ullah, Zaka; Jelani, Mohsan; Tabassum, Aasma; Cheng, Ju; Sun, Yuxiang; Lu, Jian

2017-12-01

We irradiate the single crystal boron-doped silicon (Si) with different number of laser pulses at constant fluence (7.5 J cm-2) in ambient air using Nd:YAG laser and examine its surface morphology and photoelectric properties in details. The results obtained from optical micrographs reveal the increase in heat affected zone (HAZ) and melted area of laser irradiated Si with increasing number of laser pulses. The SEM micrographs evidence the formation of various surface morphologies like laser induced periodic surface structures, crater, microcracks, clusters, cavities, pores, trapped bubbles, nucleation sites, micro-bumps, redeposited material and micro- and nano-particles on the surface of irradiated Si. The surface profilometry analysis informs that the depth of crater is increased with increase in number of incident laser pulses. The spectroscopic ellipsometry reveals that the multipulse irradiation of Si changes its optical properties (refractive index and extinction coefficient). The current-voltage (I-V) characteristic curves of laser irradiated Si show that although the multipulse laser irradiation produces considerable number of surface defects and damages, the electrical properties of Si are well sustained after the multipulse irradiation. The current findings suggest that the multipulse irradiation can be an effective way to tune the optical properties of Si for the fabrication of wide range of optoelectronic devices.

ΔOSI: a prototype microstrip dosimeter for characterization of medical radiotherapy and radiosurgery systems

International Nuclear Information System (INIS)

Redondo-Fernandez, I.; Buttar, C.; Walsh, S.; Manolopoulos, S.; Homer, J.M.; Young, S.; Conway, J.

2006-01-01

As the technology for medical radiotherapy and radiosurgery evolves, there is a growing need for dosimeters capable of measuring dose distributions on-line with submillimeter spatial resolution, both for facility commissioning and patient-related quality assurance. We have designed and built a high spatial resolution dosimeter based on silicon micro-strip technology for characterization of small radiotherapy and radiosurgery fields. The aim is to provide relative dosimetry measurement with film-like spatial resolution and to be able to resolve the temporal evolution. Following the description of the prototypes, first beam test results of a 250 μm pitch, 128 channels prototype with X-rays in a clinical 6 MV accelerator are presented. The device demonstrated good dosimetric capabilities when compared to reference measurements made with ionization chambers and agrees with radiographic film in the steep dose gradient region produced by the collimator edge

Radiation damage in proton-irradiated epitaxial silicon detectors

Energy Technology Data Exchange (ETDEWEB)

Lange, Joern

2009-07-15

In this work radiation hardness of 75 {mu}m, 100 {mu}m and 150 {mu}m thick epitaxial silicon pad diodes of both standard and oxygenated material was investigated. Damage after 24 GeV/c proton irradiation in a 1MeV neutron equivalent fluence range between 10{sup 14} cm{sup -2} and 10{sup 16} cm{sup -2} was studied and isothermal annealing experiments at 80 C were carried out. Standard CV/IV measurements could be performed up to 4 x 10{sup 15} cm{sup -2}. The volume-normalised reverse current was found to increase linearly with fluence with a slope independent of the thickness and impurity concentration. However, due to large fluctuations the fluences had to be renormalised using the current-related damage parameter. Concerning the depletion voltage, nearly all materials remained at a moderate level up to 4 x 10{sup 15} cm{sup -2}. During short-term annealing acceptors annealed out, whereas others were introduced during the long-term annealing. The stable damage was characterised by donor removal at low fluences and fluence-proportional predominant donor introduction for highly irradiated diodes, depending on the oxygen level. No type inversion was observed. Time-resolved measurements with a new 670 nm laser-TCT setup made the determination of the trapping time constant with the charge correction method possible. The results agreed with expectations and showed a linear increase of trapping probability with fluence. The electric field exhibited a double peak structure in highly irradiated diodes. Charge collection efficiency measurements with {alpha}-particles were independent of oxygen concentration, but showed an improved efficiency for thinner diodes. A comparison to simulation revealed systematic discrepancies. A non-constant trapping time parameter was proposed as possible solution. (orig.)

Radiation damage in proton-irradiated epitaxial silicon detectors

International Nuclear Information System (INIS)

Lange, Joern

2009-07-01

In this work radiation hardness of 75 μm, 100 μm and 150 μm thick epitaxial silicon pad diodes of both standard and oxygenated material was investigated. Damage after 24 GeV/c proton irradiation in a 1MeV neutron equivalent fluence range between 10 14 cm -2 and 10 16 cm -2 was studied and isothermal annealing experiments at 80 C were carried out. Standard CV/IV measurements could be performed up to 4 x 10 15 cm -2 . The volume-normalised reverse current was found to increase linearly with fluence with a slope independent of the thickness and impurity concentration. However, due to large fluctuations the fluences had to be renormalised using the current-related damage parameter. Concerning the depletion voltage, nearly all materials remained at a moderate level up to 4 x 10 15 cm -2 . During short-term annealing acceptors annealed out, whereas others were introduced during the long-term annealing. The stable damage was characterised by donor removal at low fluences and fluence-proportional predominant donor introduction for highly irradiated diodes, depending on the oxygen level. No type inversion was observed. Time-resolved measurements with a new 670 nm laser-TCT setup made the determination of the trapping time constant with the charge correction method possible. The results agreed with expectations and showed a linear increase of trapping probability with fluence. The electric field exhibited a double peak structure in highly irradiated diodes. Charge collection efficiency measurements with α-particles were independent of oxygen concentration, but showed an improved efficiency for thinner diodes. A comparison to simulation revealed systematic discrepancies. A non-constant trapping time parameter was proposed as possible solution. (orig.)

\\title{Development of Radiation Damage Models for Irradiated Silicon Sensors Using TCAD Tools}

CERN Document Server

Bhardwaj, Ashutosh; Lalwani, Kavita; Ranjan, Kirti; Printz, Martin; Ranjeet, Ranjeet; Eber, Robert; Eichhorn, Thomas; Peltola, Timo Hannu Tapani

2014-01-01

Abstract. During the high luminosity upgrade of the LHC (HL-LHC) the CMS tracking system will face a more intense radiation environment than the present system was designed for. In order to design radiation tolerant silicon sensors for the future CMS tracker upgrade it is fundamental to complement the measurement with device simulation. This will help in both the understanding of the device performance and in the optimization of the design parameters. One of the important ingredients of the device simulation is to develop a radiation damage model incorporating both bulk and surface damage. In this paper we will discuss the development of a radiation damage model by using commercial TCAD packages (Silvaco and Synopsys), which successfully reproduce the recent measurements like leakage current, depletion voltage, interstrip capacitance and interstrip resistance, and provides an insight into the performance of irradiated silicon strip sensors.

Optical spectroscopy of vacancy related defects in silicon carbide generated by proton irradiation

Energy Technology Data Exchange (ETDEWEB)

Kasper, C.; Sperlich, A.; Simin, D.; Astakhov, G.V. [Experimental Physics VI, Julius Maximilian University of Wuerzburg (Germany); Kraus, H. [Japan Atomic EnergyAgency, Takasaki, Gunma (Japan); Experimental Physics VI, Julius Maximilian University of Wuerzburg (Germany); Makino, T.; Sato, S.I.; Ohshima, T. [Japan Atomic EnergyAgency, Takasaki, Gunma (Japan); Dyakonov, V. [Experimental Physics VI, Julius Maximilian University of Wuerzburg (Germany); ZAE Bayern, Wuerzburg (Germany)

2016-07-01

Defects in silicon carbide (SiC) received growing attention in recent years, because they are promising candidates for spin based quantum information processing. In this study we examine silicon vacancies in 4H-SiC crystals generated by proton irradiation. By the use of confocal microscopy the implantation depth of Si vacancies for varying proton energies can be verified. An important issue is to ascertain the nature and distribution of the defects. For this purpose, we use the characteristic photoluminescence spectrum of Si vacancies, whose intensity is proportional to the defect density. Using xyz-scans, where the photoluminescence at each mapping point is recorded, one can thus determine the vacancies nature and their distribution in the SiC crystal. Additionally we verify the nature of the examined defects by measuring their uniquely defined zero-field-splitting by using ODMR associated with defect spins.

Investigation of carrier removal in electron irradiated silicon diodes

International Nuclear Information System (INIS)

Taylor, S.J.; Yamaguchi, M.; Matsuda, S.; Hisamatsu, T.; Kawasaki, O.

1997-01-01

We present a detailed study of n + p p + silicon diodes irradiated with fluences of 1 MeV electrons high enough to cause device failure due to majority carrier removal. Capacitance voltage (C V) measurements were used to monitor the change in the carrier concentration of the base of the device as a function of radiation fluence. These were compared to the defect spectra in the same region obtained by deep level transient spectroscopy, and to the current voltage characteristics of the device, both before and after annealing. We observed the expected deep levels with activation energies of 0.18 and 0.36 eV, but the C endash V results imply that other trap levels must play a more important role in the carrier removal process. copyright 1997 American Institute of Physics

Radial microstrip slotline feed network for circular mobile communications array

Science.gov (United States)

Simons, Rainee N.; Kelly, Eron S.; Lee, Richard Q.; Taub, Susan R.

1994-01-01

In mobile and satellite communications there is a need for low cost and low profile antennas which have a toroidal pattern. Antennas that have been developed for mobile communications include a L-Band electronically steered stripline phased array, a Ka-Band mechanically steered elliptical reflector antenna and a Ka-Band printed dipole. In addition, a L-Band mechanically steered microstrip array, a L-Band microstrip phased array tracking antenna for mounting on a car roof and an X-Band radial line slotted waveguide antenna have been demonstrated. In the above electronically scanned printed arrays, the individual element radiates normally to the plane of the array and hence require a phase shifter to scan the beam towards the horizon. Scanning in the azimuth is by mechanical or electronic steering. An alternate approach is to mount microstrip patch radiators on the surface of a cone to achieve the required elevation angle. The array then scans in the azimuth by beam switching.

Investigation of influence of electronic irradiation on photoluminescence spectrum and ir-spectrum of porous silicon

International Nuclear Information System (INIS)

Daineko, E.A.; Dihanbayev, K.K.; Akhtar, P.; Hussain, A.

2007-01-01

In this article we study the influence of 2-Mev electron irradiation on porous silicon (PS). Photoluminescence (PL) spectrum and IR-spectrum have been done on both newly-prepared PS samples and samples prepared a year ago after the irradiation. We analyzed PL spectrum for both types of PS samples. The experimental results suggest that the peak position in PL spectrum decreases for newly-prepared PS samples. The size of the nanocrystals calculated by the method of singling out of spectrum components was equal to 3.0-3.2 nm. Porosity of the samples was 60-75%. From IR-spectrum of newly-prepared PS samples wide absorption band was observed at 1100 cm/sup -1/ (Si-O-Si bond). Another peak of Si-O-Si group was observed at 850 cm/sub -1/. Also hydrogen absorption bands were appearing from 2000 to 2200 cm/sup -1/, corresponding to vibration modes SiH, SiH/sub 2/, SiH/sub 3/. As a result of electron irradiation the PL intensity of newly-prepared PS samples decreases abruptly by a factor of 30 without peak shifting. As for the samples prepared a year ago we observed a decrease in the PL intensity by 25-30%. From IR-spectrum of PS samples prepared a year ago it was shown that the intensity of bridge bonds corresponding to absorption band 850 cm/sup -1/, decreases gradually. Our experimental data shows that PS samples stored for longer time have better radiation resistant properties than the newly-prepared PS samples due to the replacement of Si-H bonds with more resistant Si-O bonds. Porous silicon, electrochemical anodizing, photoluminescence spectrum, IR-spectrum, electronic irradiation. (author)

Bandwidth enhancement of a microstrip patch antenna for ultra-wideband applications

Science.gov (United States)

Anum, Khanda; Singh, Milind Saurabh; Mishra, Rajan; Tripathi, G. S.

2018-04-01

The microstrip antennas are used where size, weight, cost, and performance are constraints. Microstrip antennas (MSA) are being used in many government and commercial applications among which it is mostly used in wireless communication. The proposed antenna is designed for Ultra-wideband (UWB), it is designed on FR4 substrate material with ɛr = 4.3 and 0.0025 loss tangent. The shape and size of patch in microstrip patch antenna plays an important role in its performance. In the proposed antenna design the respective changes have been introduced which includes slotting the feedline,adding a curved slot in patch and change in patch shape itself to improve the bandwidth of the conventional antenna. The simulated results of proposed antenna shows impedance bandwidth (defined by 10 dB return loss) of 2-11.1GHz, VSWRcommunication at 7.25-8.395 GHz.

Characterization of Czochralski silicon detectors

OpenAIRE

Luukka, Panja-Riina

2006-01-01

This thesis describes the characterization of irradiated and non-irradiated segmented detectors made of high-resistivity (>1 kΩcm) magnetic Czochralski (MCZ) silicon. It is shown that the radiation hardness (RH) of the protons of these detectors is higher than that of devices made of traditional materials such as Float Zone (FZ) silicon or Diffusion Oxygenated Float Zone (DOFZ) silicon due to the presence of intrinsic oxygen (> 5 × 1017 cm−3). The MCZ devices therefore present an interesting ...

Processing and first characterization of detectors made with high resistivity n- and p-type Czochralski silicon

International Nuclear Information System (INIS)

Bruzzi, M.; Bisello, D.; Borrello, L.; Borchi, E.; Boscardin, M.; Candelori, A.; Creanza, D.; Dalla Betta, G.-F.; DePalma, M.; Dittongo, S.; Focardi, E.; Khomenkov, V.; Litovchenko, A.; Macchiolo, A.; Manna, N.; Menichelli, D.; Messineo, A.; Miglio, S.; Petasecca, M.; Piemonte, C.; Pignatel, G.U.; Radicci, V.; Ronchin, S.; Scaringella, M.; Segneri, G.; Sentenac, D.; Tosi, C.; Zorzi, N.

2005-01-01

We report on the design, manufacturing and first characterisation of pad diodes, test structures and microstrip detectors processed with high resistivity magnetic Czochralski (MCz) p- and n-type Si. The pre-irradiation study on newly processed microstrip detectors and test structures show a good overall quality of the processed wafers. After irradiation with 24 GeV/c protons up to 4x10 14 cm -2 the characterisation of n-on-p and p-on-n MCz Si sensors with the C-V method show a decrease of the full depletion voltage and no space charge sign inversion. Microscopic characterisation has been performed to study the role of thermal donors in Czochralski Si. No evidence of thermal donor activation was observed in n-type MCz Si detectors if contact sintering was performed at a temperature lower than 380 deg. C and the final passivation oxide was omitted

Radiation damage and defect behavior in proton irradiated lithium-counterdoped n/sup +/p silicon solar cells

International Nuclear Information System (INIS)

Stupica, J.; Goradia, C.; Swartz, C.K.; Weinberg, I.

1987-01-01

Two lithium-counterdoped n/sup +/p silicon solar cells with different lithium concentrations were irradiated by 10 MeV protons. Cell performance was measured as a function of fluence, and it was found that the cell with the highest concentration of lithium had the higher radiation resistance. Deep level defects were studied using deep level transient spectroscopy which yielded two defects that were lithium related. Relating the defect energy levels obtained from this study under 10 MeV protons, with an earlier work using 1 MeV electron irradiations shows no correlation of the defect energy levels. There is one marked comparison though. The absence of the boron interstitial-oxygen interstitial defect. This consistency strengthens the belief that lithium interacts with oxygen to prevent the formation of the boron interstitial-oxygen interstitial defect. The present results indicate that, in general, addition of lithium in small amounts to the p-base of a boron doped silicon solar cell such that the base remains p-type, tends to increase the radiation resistance of the cell

Quality assurance database for the CBM silicon tracking system

Energy Technology Data Exchange (ETDEWEB)

Lymanets, Anton [Physikalisches Institut, Universitaet Tuebingen (Germany); Collaboration: CBM-Collaboration

2015-07-01

The Silicon Tracking System is a main tracking device of the CBM Experiment at FAIR. Its construction includes production, quality assurance and assembly of large number of components, e.g., 106 carbon fiber support structures, 1300 silicon microstrip sensors, 16.6k readout chips, analog microcables, etc. Detector construction is distributed over several production and assembly sites and calls for a database that would be extensible and allow tracing the components, integrating the test data, monitoring the component statuses and data flow. A possible implementation of the above-mentioned requirements is being developed at GSI (Darmstadt) based on the FAIR DB Virtual Database Library that provides connectivity to common SQL-Database engines (PostgreSQL, Oracle, etc.). Data structure, database architecture as well as status of implementation are discussed.

Characterization of 150μm thick epitaxial silicon detectors from different producers after proton irradiation

International Nuclear Information System (INIS)

Hoedlmoser, H.; Moll, M.; Haerkoenen, J.; Kronberger, M.; Trummer, J.; Rodeghiero, P.

2007-01-01

Epitaxial (EPI) silicon has recently been investigated for the development of radiation tolerant detectors for future high-luminosity HEP experiments. A study of 150μm thick EPI silicon diodes irradiated with 24GeV/c protons up to a fluence of 3x10 15 p/cm 2 has been performed by means of Charge Collection Efficiency (CCE) measurements, investigations with the Transient Current Technique (TCT) and standard CV/IV characterizations. The aim of the work was to investigate the impact of radiation damage as well as the influence of the wafer processing on the material performance by comparing diodes from different manufacturers. The changes of CCE, full depletion voltage and leakage current as a function of fluence are reported. While the generation of leakage current due to irradiation is similar in all investigated series of detectors, a difference in the effective doping concentration can be observed after irradiation. In the CCE measurements an anomalous drop in performance was found even for diodes exposed to very low fluences (5x10 13 p/cm 2 ) in all measured series. This result was confirmed for one series of diodes in TCT measurements with an infrared laser. TCT measurements with a red laser showed no type inversion up to fluences of 3x10 15 p/cm 2 for n-type devices whereas p-type diodes undergo type inversion from p- to n-type for fluences higher than ∼2x10 14 p/cm 2

Effects of phosphorus, silicon and sulphur on microstructural evolution in austenitic stainless steels during electron irradiation

International Nuclear Information System (INIS)

Fukuya, K.; Nakahigashi, S.; Ozaki, S.; Shima, S.

1991-01-01

Fe-18Cr-9Ni-1,5Mn austenitic alloys containing phosphorus, silicon and sulphur were irradiated by 1 MeV electrons at 573-773 K. Phosphorus increased the interstitial loop nucleation and decreased the void swelling by increasing void number density and suppressing void growth. Silicon had a similar effect to phosphorus but its effect was weaker than phosphorus. Sulphur enhanced void swelling through increasing the void density. Nickel enrichment at grain boundaries was suppressed only in the alloy containing phosphorus. These phosphorus effects may be explained by a strong interaction with interstitials resulting in a high density of sinks for point defects. (orig.)

Irradiation study of different silicon materials for the CMS tracker upgrade

International Nuclear Information System (INIS)

Erfle, Joachim

2014-05-01

Around 2022, an upgrade of the LHC collider complex is planned to significantly increase the luminosity (the High Luminosity LHC, HL-LHC). This means that the experiments have to cope with a higher number of collisions per bunch crossing and survive in a radiation environment much harsher than that at the present LHC. Especially the tracking detectors have to be improved for the HL-LHC. The increased number of tracks requires an increase of the number of readout channels while the higher radiation makes new sensor materials necessary. Within CMS, a measurement campaign was initiated to study the performance of different silicon materials in a corresponding radiation environment. To simulate the expected radiation the samples were irradiated with neutrons and with protons with two different energies. Radiation damage can be divided in two categories. First, ionizing energy loss in the surface isolation layers of the sensor leads to a change of the concentration of charged states in the sensor surface and therefore alters the distribution of the electrical fields in the sensor. Second, non-ionizing energy loss in the bulk of the sensor material leads to a variety of defects in the silicon lattice. Electrically active defects can influence the material properties. The three properties under investigation are the reverse current, the full depletion voltage and the charge collection. While the reverse current and full depletion voltage influence the power dissipation and the noise of the detector, the charge collection directly influences the measurement. The material properties were studied using pad and strip sensor. The structures were electrically characterized before and after irradiation with different fluences of neutrons and protons, corresponding to the expected fluences at different radii of the outer tracker after 3000 fb -1 . The charge collection measurements were mainly performed using the ALiBaVa readout system and the charge was induced with �

Development of a silicon microstrip detector with single photon sensitivity for fast dynamic diffraction experiments at a synchrotron radiation beam

Science.gov (United States)

Arakcheev, A.; Aulchenko, V.; Kudashkin, D.; Shekhtman, L.; Tolochko, B.; Zhulanov, V.

2017-06-01

Time-resolved experiments on the diffraction of synchrotron radiation (SR) from crystalline materials provide information on the evolution of a material structure after a heat, electron beam or plasma interaction with a sample under study. Changes in the material structure happen within a microsecond scale and a detector with corresponding parameters is needed. The SR channel 8 of the VEPP-4M storage ring provides radiation from the 7-pole wiggler that allows to reach several tens photons within one μs from a tungsten crystal for the most intensive diffraction peak. In order to perform experiments that allow to measure the evolution of tungsten crystalline structure under the impact of powerful laser beam, a new detector is developed, that can provide information about the distribution of a scattered SR flux in space and its evolution in time at a microsecond scale. The detector is based on the silicon p-in-n microstrip sensor with DC-coupled metal strips. The sensor contains 1024 30 mm long strips with a 50 μm pitch. 64 strips are bonded to the front-end electronics based on APC128 ASICs. The APC128 ASIC contains 128 channels that consist of a low noise integrator with 32 analogue memory cells each. The integrator equivalent noise charge is about 2000 electrons and thus the signal from individual photons with energy above 40 keV can be observed. The signal can be stored at the analogue memory with 10 MHz rate. The first measurements with the beam scattered from a tungsten crystal with energy near 60 keV demonstrated the capability of this prototype to observe the spatial distribution of the photon flux with the intensity from below one photon per channel up to 0~10 photons per channel with a frame rate from 10 kHz up to 1 MHz.

The development of p-type silicon detectors for the high radiation regions of the LHC

International Nuclear Information System (INIS)

Hanlon, M.D.L.

1998-04-01

This thesis describes the production and characterisation of silicon microstrip detectors and test structures on p-type substrates. An account is given of the production and full parameterisation of a p-type microstrip detector, incorporating the ATLAS-A geometry in a beam test. This detector is an AC coupled device incorporating a continuous p-stop isolation frame and polysilicon biasing and is typical of n-strip devices proposed for operation at the LHC. It was successfully read out using the FELix-128 analogue pipeline chip and a signal to noise (s/n) of 17±1 is reported, along with a spatial resolution of 14.6±0.2 μm. Diode test structures were fabricated on both high resistivity float zone material and on epitaxial material and subsequently irradiated with 24 GeV protons at the CERN PS up to a dose of (8.22±0.23) x 10 14 per cm 2 . An account of the measurement program is presented along with results on the changes in the effective doping concentration (N eff ) with irradiation and the changes in bulk current. Changes in the effective doping concentration and leakage current for high resistivity p-type material under irradiation were found to be similar to to that of n-type material. Values of α=(3.30±0.08) x 10 -17 A cm -1 for the leakage current parameter and g c =(1.20±0.05)x10 -2 cm -1 for the effective dopant introduction rate were found for this material. The epitaxial material did not perform better than the float zone material for the range of doses studied. Surprising results were obtained for highly irradiated p-type diodes illuminated on the ohmic side with an α-source, in that signals were observed well below the full depletion voltage. The processing that had been used to fabricate the test structures and the initial prototype that was studied in the test beam was based on the process used to fabricate devices on n-type material. Presented in this thesis are the modifications that were made to the process, which centred on the oxidation

Comparison of pad detectors produced on different silicon materials after irradiation with neutrons, protons and pions

International Nuclear Information System (INIS)

Kramberger, G.; Cindro, V.; Dolenc, I.; Mandic, I.; Mikuz, M.; Zavrtanik, M.

2010-01-01

A set of 44 pad detectors produced on p- and n-type MCz and Fz wafers was irradiated with 23 GeV protons, 200 MeV pions and reactor neutrons up to the equivalent fluences of Φ eq =3x10 15 cm -2 . The evolution of the full depletion voltage and the leakage current were monitored during short- and long-term annealing. At selected representative annealing steps, charge collection measurements were performed for all samples with LHC speed electronics. Measurements of full depletion voltage, leakage current and charge collection efficiency were compared for different irradiation particles and silicon materials.

Comparison of pad detectors produced on different silicon materials after irradiation with neutrons, protons and pions

Energy Technology Data Exchange (ETDEWEB)

Kramberger, G., E-mail: Gregor.Kramberger@ijs.s [Jozef Stefan Institute and Department of Physics, University of Ljubljana, SI-1000 Ljubljana (Slovenia); Cindro, V.; Dolenc, I.; Mandic, I.; Mikuz, M.; Zavrtanik, M. [Jozef Stefan Institute and Department of Physics, University of Ljubljana, SI-1000 Ljubljana (Slovenia)

2010-01-01

A set of 44 pad detectors produced on p- and n-type MCz and Fz wafers was irradiated with 23 GeV protons, 200 MeV pions and reactor neutrons up to the equivalent fluences of PHI{sub eq}=3x10{sup 15}cm{sup -2}. The evolution of the full depletion voltage and the leakage current were monitored during short- and long-term annealing. At selected representative annealing steps, charge collection measurements were performed for all samples with LHC speed electronics. Measurements of full depletion voltage, leakage current and charge collection efficiency were compared for different irradiation particles and silicon materials.

Temperature dependent investigation on optically active process of higher-order bands in irradiated silicon

International Nuclear Information System (INIS)

Shi Yi; Nanjing Univ., JS; Wu Fengmei; Nanjing Univ., JS; Zheng Youdou; Nanjing Univ., JS; Suezawa, M.; Imai, M.; Sumino, K.

1996-01-01

Optically active processes of the higher-order bands (HOB) are investigated at different temperatures in fast neutron irradiated silicon using Fourier transform infrared absorption measurement. It is shown that the optically active process is nearly temperature independent below 80 K, the slow decay process remains up to a heating temperature of 180 K. The observations are analyzed in terms of the relaxation behavior of photoexcited carriers governed by fast neutron radiation induced defect clusters. (orig.)

Production and aging of paramagnetic point defects in P-doped floating zone silicon irradiated with high fluence 27 MeV electrons

Science.gov (United States)

Joita, A. C.; Nistor, S. V.

2018-04-01

Enhancing the long term stable performance of silicon detectors used for monitoring the position and flux of the particle beams in high energy physics experiments requires a better knowledge of the nature, stability, and transformation properties of the radiation defects created over the operation time. We report the results of an electron spin resonance investigation in the nature, transformation, and long term stability of the irradiation paramagnetic point defects (IPPDs) produced by high fluence (2 × 1016 cm-2), high energy (27 MeV) electrons in n-type, P-doped standard floating zone silicon. We found out that both freshly irradiated and aged (i.e., stored after irradiation for 3.5 years at 250 K) samples mainly contain negatively charged tetravacancy and pentavacancy defects in the first case and tetravacancy defects in the second one. The fact that such small cluster vacancy defects have not been observed by irradiation with low energy (below 5 MeV) electrons, but were abundantly produced by irradiation with neutrons, strongly suggests the presence of the same mechanism of direct formation of small vacancy clusters by irradiation with neutrons and high energy, high fluence electrons, in agreement with theoretical predictions. Differences in the nature and annealing properties of the IPPDs observed between the 27 MeV electrons freshly irradiated, and irradiated and aged samples were attributed to the presence of a high concentration of divacancies in the freshly irradiated samples, defects which transform during storage at 250 K through diffusion and recombination processes.

Computer-Aided Design of Microstrip GaAs Mesfet Amplifiers

DEFF Research Database (Denmark)

Nielsen, Niels Ole

1976-01-01

Results on computer-aided design of broadband GaAs MESFET amplifiers in microstrip is presented. The analysis of an amplifier is based on measured scattering parameters and a model of the microstrip structure, which includes parasitics and junction effects. The optimized performance of one stage...... amplifiers with lossless distributed matching elements is presented. Realized amplifiers are in good agreement with the theory. One stage amplifiers with a 1 ¿m FET in chip form exhibit 5.8 dB of gain in the range 8-12 GHz, while a gain of 4.5 dB from 4-8 GHz has been obtained with a packaged 1 ¿m FET....

Characterisation of irradiated thin silicon sensors for the CMS phase II pixel upgrade

Energy Technology Data Exchange (ETDEWEB)

Adam, W.; Bergauer, T.; Brondolin, E. [Institut fuer Hochenergiephysik, Vienna (Austria); and others

2017-08-15

The high luminosity upgrade of the Large Hadron Collider, foreseen for 2026, necessitates the replacement of the CMS experiment's silicon tracker. The innermost layer of the new pixel detector will be exposed to severe radiation, corresponding to a 1 MeV neutron equivalent fluence of up to Φ{sub eq} = 2 x 10{sup 16} cm{sup -2}, and an ionising dose of ∼5 MGy after an integrated luminosity of 3000 fb{sup -1}. Thin, planar silicon sensors are good candidates for this application, since the degradation of the signal produced by traversing particles is less severe than for thicker devices. In this paper, the results obtained from the characterisation of 100 and 200 μm thick p-bulk pad diodes and strip sensors irradiated up to fluences of Φ{sub eq} = 1.3 x 10{sup 16} cm{sup -2} are shown. (orig.)

EPR and transient capacitance studies on electron-irradiated silicon solar cells

Science.gov (United States)

Lee, Y. H.; Cheng, L. J.; Mooney, P. M.; Corbett, J. W.

1977-01-01

One and two ohm-cm solar cells irradiated with 1 MeV electrons at 30 C were studied using both EPR and transient capacitance techniques. In 2 ohm-cm cells, Si-G6 and Si-G15 EPR spectra and majority carrier trapping levels at (E sub V + 0.23) eV and (E sub V + 0.38) eV were observed, each of which corresponded to the divacancy and the carbon-oxygen-vacancy complex, respectively. In addition, a boron-associated defect with a minority carrier trapping level at (E sub C -0.27) eV was observed. In 1 ohm-cm cells, the G15 spectrum and majority carrier trap at (E sub V + 0.38) eV were absent and an isotropic EPR line appeared at g = 1.9988 (+ or - 0.0003); additionally, a majority carrier trapping center at (E sub V + 0.32) eV, was found which could be associated with impurity lithium. The formation mechanisms of these defects are discussed according to isochronal annealing data in electron-irradiated p-type silicon.

Two-dimensional microstrip detector for neutrons

Energy Technology Data Exchange (ETDEWEB)

Oed, A [Institut Max von Laue - Paul Langevin (ILL), 38 - Grenoble (France)

1997-04-01

Because of their robust design, gas microstrip detectors, which were developed at ILL, can be assembled relatively quickly, provided the prefabricated components are available. At the beginning of 1996, orders were received for the construction of three two-dimensional neutron detectors. These detectors have been completed. The detectors are outlined below. (author). 2 refs.

Study of intense pulse irradiation effects on silicon targets considered as ground matter for optical detectors

International Nuclear Information System (INIS)

Muller, O.

1994-12-01

This study aim was centered on morphological and structural alterations induced by laser irradiation on silicon targets considered as ground matter for optical detectors. First we recalled the main high light intensity effects on the condensed matter. Then we presented the experimental aspects. The experimental studies were achieved on two sample types: SiO 2 /Si and Si. Two topics were studied: the defect chronology according to wavelength and pulse length, and the crystalline quality as well as the structure defects of irradiated zones by Raman spectroscopy. Finally, irradiation of Si targets by intense pulsed beams may lead to material fusion. This phenomenon is particularly easy when the material is absorbent, when the pulse is short and when the material is superficially oxidized. (MML). 204 refs., 93 figs., 21 tabs., 1 appendix

The front-end amplifier for the silicon microstrip sensors of the PANDA MVD

Energy Technology Data Exchange (ETDEWEB)

Di Pietro, Valentino; Brinkmann, Kai-Thomas; Riccardi, Alberto [II. Physikalisches Institut, JLU Giessen (Germany); Rivetti, Angelo; Rolo, Manuel [INFN Sezione di Torino (Italy)

2015-07-01

The most common readout systems designed for the nuclear physics detectors are based on amplitude measurements. The information that needs to be preserved is the charge delivered by a particle hitting the sensor. The electronic chain employed in these cases is made from two main building blocks: front-end amplifier and ADC. One of the issues associated with the implementation of such an architecture in scaled CMOS technologies is the dynamic range, because the charge information is extrapolated through the sampling of the peak of the front-end output signal. It is therefore interesting to explore the possibility of using time-based architectures offering better performances from that point of view. In fact, in these topologies the linearity between the charge and the signal duration can be maintained even if some building blocks in the chain saturate. The main drawback is the loss in resolution since a duration measurement involves the difference between two time measurements. This work will present the design of a front-end optimized for fast Time-over-Threshold applications. The circuit has been developed for the microstrip detectors of the PANDA experiment. The key features of the front-end amplifier are illustrated and both schematic level, and post-layout simulations are discussed.

Testing of bulk radiation damage of n-in-p silicon sensors for very high radiation environments

Czech Academy of Sciences Publication Activity Database

Hara, K.; Affolder, A.A.; Allport, P.P.; Bates, R.; Betancourt, C.; Böhm, Jan; Brown, H.; Buttar, C.; Carter, J. R.; Casse, G.; Mikeštíková, Marcela

2011-01-01

Roč. 636, č. 1 (2011), "S83"-"S89" ISSN 0168-9002 R&D Projects: GA MŠk LA08032 Institutional research plan: CEZ:AV0Z10100502 Keywords : p-bulk silicon * microstrip * charge collection * radiation damage Subject RIV: BF - Elementary Particles and High Energy Physics Impact factor: 1.207, year: 2011 http://dx.doi.org/10.1016/j.nima.2010.04.090

Excimer laser decomposition of silicone

International Nuclear Information System (INIS)

Laude, L.D.; Cochrane, C.; Dicara, Cl.; Dupas-Bruzek, C.; Kolev, K.

2003-01-01

Excimer laser irradiation of silicone foils is shown in this work to induce decomposition, ablation and activation of such materials. Thin (100 μm) laminated silicone foils are irradiated at 248 nm as a function of impacting laser fluence and number of pulsed irradiations at 1 s intervals. Above a threshold fluence of 0.7 J/cm 2 , material starts decomposing. At higher fluences, this decomposition develops and gives rise to (i) swelling of the irradiated surface and then (ii) emission of matter (ablation) at a rate that is not proportioned to the number of pulses. Taking into consideration the polymer structure and the foil lamination process, these results help defining the phenomenology of silicone ablation. The polymer decomposition results in two parts: one which is organic and volatile, and another part which is inorganic and remains, forming an ever thickening screen to light penetration as the number of light pulses increases. A mathematical model is developed that accounts successfully for this physical screening effect

Investigation of leakage current and breakdown voltage in irradiated double-sided 3D silicon sensors

International Nuclear Information System (INIS)

Betta, G.-F. Dalla; Mendicino, R.; Povoli, M.; Sultan, D.M.S.; Ayllon, N.; Hoeferkamp, M.; McDuff, H.; Seidel, S.; Boscardin, M.; Zorzi, N.; Mattiazzo, S.

2016-01-01

We report on an experimental study aimed at gaining deeper insight into the leakage current and breakdown voltage of irradiated double-sided 3D silicon sensors from FBK, so as to improve both the design and the fabrication technology for use at future hadron colliders such as the High Luminosity LHC. Several 3D diode samples of different technologies and layout are considered, as well as several irradiations with different particle types. While the leakage current follows the expected linear trend with radiation fluence, the breakdown voltage is found to depend on both the bulk damage and the surface damage, and its values can vary significantly with sensor geometry and process details.

Development of ALICE microstrip detectors at IRST

International Nuclear Information System (INIS)

Boscardin, M.; Bosisio, L.; Dalla Betta, G.-F.; Gregori, P.; Rachevskaia, I.; Zorzi, N.

2001-01-01

We report on the development of double-sided, AC-coupled, microstrip detectors oriented to the A Large Ion Collider Experiment (ALICE). The main design and processing issues are presented, together with some selected results from the electrical characterization of detectors and related test structures

Antihydrogen annihilation reconstruction with the ALPHA silicon detector

Energy Technology Data Exchange (ETDEWEB)

Andresen, G.B. [Department of Physics and Astronomy, Aarhus University, DK-8000 Aarhus C (Denmark); Ashkezari, M.D. [Department of Physics, Simon Fraser University, Burnaby, BC, Canada V5A 1S6 (Canada); Bertsche, W. [Department of Physics, Swansea University, Swansea SA2 8PP (United Kingdom); Bowe, P.D. [Department of Physics and Astronomy, Aarhus University, DK-8000 Aarhus C (Denmark); Butler, E. [European Laboratory for Particle Physics, CERN, CH-1211 Geneva 23 (Switzerland); Cesar, C.L. [Instituto de Fisica, Universidade Federal do Rio de Janeiro, Rio de Janeiro 21941-972 (Brazil); Chapman, S. [Department of Physics, University of California, Berkeley, CA 94720-7300 (United States); Charlton, M.; Deller, A.; Eriksson, S. [Department of Physics, Swansea University, Swansea SA2 8PP (United Kingdom); Fajans, J. [Department of Physics, University of California, Berkeley, CA 94720-7300 (United States); Friesen, T. [Department of Physics and Astronomy, University of Calgary, Calgary, AB, Canada T2N 1N4 (Canada); Fujiwara, M.C. [TRIUMF, 4004 Wesbrook Mall, Vancouver, BC, Canada V6T 2A3 (Canada); Department of Physics and Astronomy, University of Calgary, Calgary, AB, Canada T2N 1N4 (Canada); Gill, D.R. [TRIUMF, 4004 Wesbrook Mall, Vancouver, BC, Canada V6T 2A3 (Canada); Gutierrez, A. [Department of Physics and Astronomy, University of British Columbia, Vancouver, BC, Canada V6T 1Z4 (Canada); Hangst, J.S. [Department of Physics and Astronomy, Aarhus University, DK-8000 Aarhus C (Denmark); Hardy, W.N. [Department of Physics and Astronomy, University of British Columbia, Vancouver, BC, Canada V6T 1Z4 (Canada); Hayden, M.E. [Department of Physics, Simon Fraser University, Burnaby, BC, Canada V5A 1S6 (Canada); Hayano, R.S. [Department of Physics, University of Tokyo, Tokyo 113-0033 (Japan); Humphries, A.J. [Department of Physics, Swansea University, Swansea SA2 8PP (United Kingdom); and others

2012-08-21

The ALPHA experiment has succeeded in trapping antihydrogen, a major milestone on the road to spectroscopic comparisons of antihydrogen with hydrogen. An annihilation vertex detector, which determines the time and position of antiproton annihilations, has been central to this achievement. This detector, an array of double-sided silicon microstrip detector modules arranged in three concentric cylindrical tiers, is sensitive to the passage of charged particles resulting from antiproton annihilation. This article describes the method used to reconstruct the annihilation location and to distinguish the annihilation signal from the cosmic ray background. Recent experimental results using this detector are outlined.

Antihydrogen annihilation reconstruction with the ALPHA silicon detector

CERN Document Server

Andresen, G B; Bertsche, W; Bowe, P D; Butler, E; Cesar, C L; Chapman, S; Charlton, M; Deller, A; Eriksson, S; Fajans, J; Friesen, T; Fujiwara, M C; Gill, D.R; Gutierrez, A; Hangst, J S; Hardy, W N; Hayden, M E; Hayano, R S; Humphries, A J; Hydomako, R; Jonsell, S; Jorgensen, L V; Kurchaninov, L; Madsen, N; Menary, S; Nolan, P; Olchanski, K; Olin, A; Povilus, A; Pusa, P; Sarid, E; Seif el Nasr, S; Silveira, D M; So, C; Storey, J W; Thompson, R I; van der Werf, D P; Yamazaki, Y

2012-01-01

The ALPHA experiment has succeeded in trapping antihydrogen, a major milestone on the road to spectroscopic comparisons of antihydrogen with hydrogen. An annihilation vertex detector, which determines the time and position of antiproton annihilations, has been central to this achievement. This detector, an array of double-sided silicon microstrip detector modules arranged in three concentric cylindrical tiers, is sensitive to the passage of charged particles resulting from antiproton annihilation. This article describes the method used to reconstruct the annihilation location and to distinguish the annihilation signal from the cosmic ray background. Recent experimental results using this detector are outlined.

The silicon tracking system of the CBM experiment at FAIR

Energy Technology Data Exchange (ETDEWEB)

Singla, Minni [GSI Darmstadt (Germany); Collaboration: CBM-Collaboration

2015-07-01

The Compressed Baryonic Matter (CBM) experiment, one of the major scientific pillars at FAIR, will explore the phase diagram of strongly interacting matter at the highest net-baryon densities in nucleus-nucleus collisions with interaction rates up to 10 MHz. The Silicon Tracking System is the central detector system of the CBM experiment. Its task is to perform track reconstruction and momentum determination for all charged particles created in beam-target collisions at SIS 100 and SIS 300 beam energies. The technical challenges to meet are a high granularity matching the high track densities, a fast self-triggering read-out coping with high interaction rates, and a low mass to yield high momentum resolution of Δp/p=1%. The detector system acceptance covers polar angles between 2.5 and 25 degrees and will be operated in the 1 T field of a superconducting dipole magnet. We introduce the concept of the STS, being comprised of eight tracking stations employing ∝1300 double-sided silicon microstrip sensors on modular structures that keep the read-out electronics outside the physics aperture. Ultra-thin-multiline micro-cables will be used to bridge the distance between the microstrip sensors and the readout electronics. Infrastructure such as power lines and cooling plates will be placed at the periphery of the stations. The status of the STS development is summarized in the presentation, including an overview on sensors, read-out electronics, prototypes, and system integration.

5G MIMO Conformal Microstrip Antenna Design

Directory of Open Access Journals (Sweden)

Qian Wang

2017-01-01

Full Text Available With the development of wireless communication technology, 5G will develop into a new generation of wireless mobile communication systems. MIMO (multiple-input multiple-output technology is expected to be one of the key technologies in the field of 5G wireless communications. In this paper, 4 pairs of microstrip MIMO conformal antennas of 35 GHz have been designed. Eight-element microstrip Taylor antenna array with series-feeding not only achieves the deviation of the main lobe of the pattern but also increases the bandwidth of the antenna array and reduces sidelobe. MIMO antennas have been fabricated and measured. Measurement results match the simulation results well. The return loss of the antenna at 35 GHz is better than 20 dB, the first sidelobe level is −16 dB, and the angle between the main lobe and the plane of array is 60°.

ATLAS silicon module assembly and qualification tests at IFIC Valencia

International Nuclear Information System (INIS)

Bernabeu, J; Civera, J V; Costa, M J; Escobar, C; Fuster, J; Garcia, C; Garcia-Navarro, J E; Gonzalez, F; Gonzalez-Sevilla, S; Lacasta, C; Llosa, G; Marti-Garcia, S; Minano, M; Mitsou, V A; Modesto, P; Nacher, J; Rodriguez-Oliete, R; Sanchez, F J; Sospedra, L; Strachko, V

2007-01-01

ATLAS experiment, designed to probe the interactions of particles emerging out of proton proton collisions at energies of up to 14 TeV, will assume operation at the Large Hadron Collider (LHC) at CERN in 2007. This paper discusses the assembly and the quality control tests of forward detector modules for the ATLAS silicon microstrip detector assembled at the Instituto de Fisica Corpuscular (IFIC) in Valencia. The construction and testing procedures are outlined and the laboratory equipment is briefly described. Emphasis is given on the module quality achieved in terms of mechanical and electrical stability

Planar edgeless silicon detectors for the TOTEM experiment

CERN Document Server

Ruggiero, G; Noschis, E

2007-01-01

Recently the first prototype of microstrip edgeless silicon detector for the TOTEM experiment has been successfully produced and tested. This detector is fabricated with standard planar technology, reach sensitivity 50 μm from the cut edge and can operate with high bias at room temperature. These almost edgeless detectors employ a newly conceived terminating structure, which, although being reduced with respect to the conventional ones, still controls the electric field at the device periphery and prevents leakage current breakdown for high bias. Detectors with the new terminating structure are being produced now and will be installed at LHC in the Roman Pots, a special beam insertion, to allow the TOTEM experiment to detect leading protons at 10 σ from the beam. This paper will describe this new terminating structure for planar silicon detectors, how it applies to big size devices and the experimental tests proving their functionality.

In-flight operations and status of the AMS-02 silicon tracker

OpenAIRE

Ambrosi, G.; Azzarello, P.; Battiston, R.; Bertucci, B.; Choumilov, E.; Choutko, V.; Crispoltoni, M.; Delgado, C.; Duranti, M.; Donnini, F.; D'Urso, D.; Fiandrini, E.; Formato, V.; Graziani, M.; Habiby, M.

2016-01-01

The AMS-02 detector is a large acceptance magnetic spectrometer operating on the International Space Station since May 2011. More than 60 billion events have been collected by the instrument as of today. One of the key subdetectors of AMS-02 is the microstrip silicon Tracker, designed to precisely measure the trajectory and absolute charge of cosmic rays in the GeV-TeV energy range. In addition, with the magnetic field, is also measuring the particle magnetic rigidity, defined as R = pc/Ze, a...

arXiv Signal coupling to embedded pitch adapters in silicon sensors

CERN Document Server

Artuso, M.; Bezshyiko, I.; Blusk, S.; Bruendler, R.; Bugiel, S.; Dasgupta, R.; Dendek, A.; Dey, B.; Ely, S.; Lionetto, F.; Petruzzo, M.; Polyakov, I.; Rudolph, M.; Schindler, H.; Steinkamp, O.; Stone, S.

2018-01-01

We have examined the effects of embedded pitch adapters on signal formation in n-substrate silicon microstrip sensors with data from beam tests and simulation. According to simulation, the presence of the pitch adapter metal layer changes the electric field inside the sensor, resulting in slowed signal formation on the nearby strips and a pick-up effect on the pitch adapter. This can result in an inefficiency to detect particles passing through the pitch adapter region. All these effects have been observed in the beam test data.

CBM experiment. Characterization studies of the detector modules for silicon tracking syste

Directory of Open Access Journals (Sweden)

I. V. Panasenko

2013-09-01

Full Text Available The double-sided silicon microstrip detector prototypes with 50 μm pitch developed together with CiS, Germany, have been characterized in a 2.4 GeV/c proton beam at COSY, Forschungszentrum Jülich, Germany. Data analyses including reconstruction of 1-strip and 2-strip clusters have been performed. We have done the study of charge sharing in the interstrip gap. In particular it was found that there is a charge loss of less than 10 % in the interstrip gap. The calculated signal-to-noise ratio is around 19 for the p-side of the sensor and it is sufficient for hit reconstruction. Also the charge sharing function which allows more precise determination of the hit position in silicon sensor, have been reconstructed.

New technologies of silicon position-sensitive detectors for future tracker systems

CERN Document Server

Bassignana, Daniela; Lozano, M

In view of the new generation of high luminosity colliders, HL-LHC and ILC, a farther investigation of silicon radiation detectors design and technology is demanded, in order to satisfy the stringent requirements of the experiments at such sophisticated machines. In this thesis, innovative technologies of silicon radiation detectors for future tracking systems are proposed. Three dierent devices have been studied and designed with the help of dierent tools for computer simulations. They have been manufactured in the IMB-CNM clean room facilities in Barcelona and characterized with proper experimental set-ups in order to test the detectors capabilities and the quality and suitability of the technologies used for their fabrication. The rst technology deals with the upgrade of dedicated sensors for laser alignment systems in future tracker detectors. The design and technology of common single-sided silicon microstrip detectors have been slightly modied in order to improve IR light transmittance of the devices. T...

Development of microstrip gas chamber and application to imaging gamma-ray detector

International Nuclear Information System (INIS)

Tanimori, T.; Minami, S.; Nagae, T.; Takahashi, T.; Miyagi, T.

1992-07-01

We have developed Microstrip Gas Chamber (MSGC) by using Multi-Chip technology which enables high-density assembly of bare LSI chips on a silicon board. Our MSGC was operated steadily with ∼ 10 3 gain more than one week. An energy resolution of 15% (FWHM) for 5.9 keV X-ray of 55 Fe was obtained. With very thin polyimide substrate of 16 μm thickness, two interesting phenomena were observed; one is a strong dependence of gains on the back plane potential, and the other is little time variation of gains. New type of MSGC with a guarding mask of a thin polyimide layer on the cathode edges has been examined to reduce incidental electrical discharges between anode and cathode strips. Furthermore, new approach to reduce the resistivity of the substrate has been examined. By these approaches, the stability of the high gain operation of ∼ 10 4 has been drastically improved. In addition, we discuss the possibility of the application of MSGC to the coded mask X-ray imaging detector for astrophysics. (author)

Testbeam studies of silicon microstrip sensor architectures modified to facilitate detector module mass production

CERN Document Server

Poley, Anne-luise; The ATLAS collaboration

2016-01-01

For the High Luminosity Upgrade of the LHC, the Inner Detector of the ATLAS detector will be replaced by an all-silicon tracker, consisting of pixel and strip sensor detector modules. Silicon strip sensors are being developed to meet both the tracking requirements in a high particle density environment and constraints imposed by the construction process. Several thousand wire bonds per module, connecting sensor strips and readout channels, need to be produced with high reliability and speed, requiring wire bond pads of sufficient size on each sensor strip. These sensor bond pads change the local sensor architecture and the resulting electric field and thus alter the sensor performance. These sensor regions with bond pads, which account for up to 10 % of a silicon strip sensor, were studied using both an electron beam at DESY and a micro-focused X-ray beam at the Diamond Light Source. This contribution presents measurements of the effective strip width in sensor regions where the structure of standard parallel...

Slotted Circularly Polarized Microstrip Antenna for RFID Application

Directory of Open Access Journals (Sweden)

S. Kumar

2017-12-01

Full Text Available A single layer coaxial fed rectangular microstrip slotted antenna for circular polarization (CP is proposed for radio frequency identification (RFID application. Two triangular shaped slots and one rectangular slot along the diagonal axis of a square patch have been embedded. Due to slotted structure along the diagonal axis and less surface area, good quality of circular polarization has been obtained with the reduction in the size of microstrip antenna by 4.04 %. Circular polarization radiation performance has been studied by size and angle variation of diagonally slotted structures. The experimental result found for 10-dB return loss is 44 MHz with 10MHz of 3dB Axial Ratio (AR bandwidth respectively at the resonant frequency 910 MHz. The overall proposed antenna size including the ground plane is 80 mm x 80 mm x 4.572 mm.

Tuning of the silicon microstrip detector (SCT) digitization parameters at ATLAS

Energy Technology Data Exchange (ETDEWEB)

Vishwakarma, Akanksha [Humboldt University, Unter den Linden 6, 10099 Berlin (Germany)

2016-07-01

The increased luminosity of LHC in RUN-2 causes high radiation exposure of the ATLAS detector. This might bring about changes in the detector responses, especially of the pixel and the silicon strip detector. To study this, several digitization parameters are varied in the simulation and are analysed by comparing with data. In particular, the impact on the reconstructed cluster and track is considered. This investigation is used to optimize data-Monte Carlo agreement.

Effect of electron injection on defect reactions in irradiated silicon containing boron, carbon, and oxygen

Science.gov (United States)

Makarenko, L. F.; Lastovskii, S. B.; Yakushevich, H. S.; Moll, M.; Pintilie, I.

2018-04-01

Comparative studies employing Deep Level Transient Spectroscopy and C-V measurements have been performed on recombination-enhanced reactions between defects of interstitial type in boron doped silicon diodes irradiated with alpha-particles. It has been shown that self-interstitial related defects which are immobile even at room temperatures can be activated by very low forward currents at liquid nitrogen temperatures. Their activation is accompanied by the appearance of interstitial carbon atoms. It has been found that at rather high forward current densities which enhance BiOi complex disappearance, a retardation of Ci annealing takes place. Contrary to conventional thermal annealing of the interstitial boron-interstitial oxygen complex, the use of forward current injection helps to recover an essential part of charge carriers removed due to irradiation.

A Method to Simulate the Observed Surface Properties of Proton Irradiated Silicon Strip Sensors

CERN Document Server

INSPIRE-00335524; Bhardwaj, A.; Dalal, R.; Eber, R.; Eichhorn, T.; Lalwani, K.; Messineo, A.; Printz, M.; Ranjan, K.

2015-04-23

During the scheduled high luminosity upgrade of LHC, the world's largest particle physics accelerator at CERN, the position sensitive silicon detectors installed in the vertex and tracking part of the CMS experiment will face more intense radiation environment than the present system was designed for. To upgrade the tracker to required performance level, extensive measurements and simulations studies have already been carried out. A defect model of Synopsys Sentaurus TCAD simulation package for the bulk properties of proton irradiated devices has been producing simulations closely matching with measurements of silicon strip detectors. However, the model does not provide expected behavior due to the fluence increased surface damage. The solution requires an approach that does not affect the accurate bulk properties produced by the proton model, but only adds to it the required radiation induced properties close to the surface. These include the observed position dependency of the strip detector's charge collec...

Analysis of superconducting microstrip resonator at various microwave power levels

International Nuclear Information System (INIS)

Srivastava, G.P.; Jacob, M.V.; Jayakumar, M.; Bhatnagar, P.K.; Kataria, N.D.

1997-01-01

The real and imaginary parts of the surface impedance of YBCO superconductors have been studied at different microwave power levels. Using the relations for the critical current density and the grain boundary resistance, a relation for calculating the power dependence of the surface resistance has been obtained. Also, a relation to find the resonant frequency of a superconducting microstrip resonator at various input power levels has been derived. Measurements have been carried out on various microstrip resonators to study the variation of surface resistance and resonant frequency at different rf power levels. The experimental results are in good agreement with theoretical results. copyright 1997 American Institute of Physics

High Performance Circularly Polarized Microstrip Antenna

Science.gov (United States)

Bondyopadhyay, Probir K. (Inventor)

1997-01-01

A microstrip antenna for radiating circularly polarized electromagnetic waves comprising a cluster array of at least four microstrip radiator elements, each of which is provided with dual orthogonal coplanar feeds in phase quadrature relation achieved by connection to an asymmetric T-junction power divider impedance notched at resonance. The dual fed circularly polarized reference element is positioned with its axis at a 45 deg angle with respect to the unit cell axis. The other three dual fed elements in the unit cell are positioned and fed with a coplanar feed structure with sequential rotation and phasing to enhance the axial ratio and impedance matching performance over a wide bandwidth. The centers of the radiator elements are disposed at the corners of a square with each side of a length d in the range of 0.7 to 0.9 times the free space wavelength of the antenna radiation and the radiator elements reside in a square unit cell area of sides equal to 2d and thereby permit the array to be used as a phased array antenna for electronic scanning and is realizable in a high temperature superconducting thin film material for high efficiency.

Geometrical optimization of microstripe arrays for microbead magnetophoresis

DEFF Research Database (Denmark)

Henriksen, Anders Dahl; Rozlosnik, Noemi; Hansen, Mikkel Fougt

2015-01-01

Manipulation of magnetic beads plays an increasingly important role in molecular diagnostics. Magnetophoresis is a promising technique for selective transportation of magnetic beads in lab-on-a-chip systems. We investigate periodic arrays of exchange-biased permalloy microstripes fabricated using...

Development of microstrip gas chambers on substrata with electronic conductivity

International Nuclear Information System (INIS)

Bouclier, R.; Garabatos, C.; Manzin, G.; Sauli, F.; Shekhtman, L.; Temmel, T.; Della Mea, G.; Maggioni, G.; Rigato, V.; Logachenko, I.

1994-01-01

This paper describes several recent developments on Microstrip Gas Chambers (MSGCs). The authors have studied the operating behavior of the detectors in different gas mixtures; maximum stable gains have been achieved in mixtures of argon and dimethyl-ether (DME) in almost equal proportions. Using detectors manufactured on semi-conducting glass substrates, capable of withstanding very high rates (above 10 6 mm -2 s -1 ), they have demonstrated extended lifetime without gain modifications up to a collected charge of 130 mC cm -1 in clean laboratory operating conditions. They have also verified that relaxing the requirements on cleanness conditions, either in the gas mixing system or in the detector construction, may result in fast aging of the devices under irradiation. As an alternative to the semi-conducting glass, they have developed a novel technique to coat regular glass with a thin lead silicate layer having electron conductivity; a new development consisting in coating already manufactured MSGCs with the thin semi-conducting layer is also described. The preliminary results show an excellent rate capability of this kind of devices, intrinsically simpler to manufacture

A Method to Simulate the Observed Surface Properties of Proton Irradiated Silicon Strip Sensors

CERN Document Server

Peltola, Timo Hannu Tapani

2014-01-01

A defect model of Synopsys Sentaurus TCAD simulation package for the bulk properties of proton irradiated devices has been producing simulations closely matching to measurements of silicon strip detectors. However, the model does not provide the expected behavior due to the fluence increased surface damage. The solution requires an approach that does not affect the accurate bulk properties produced by the proton model, but only adds to it the required radiation induced properties close to the surface. These include the observed position dependency of the strip detector's...

Radiation defect distribution in silicon irradiated with 600 keV electrons

International Nuclear Information System (INIS)

Hazdra, P.; Dorschner, H.

2003-01-01

Low-doped n-type float zone silicon was irradiated with 600 keV electrons to fluences from 2x10 13 to 1x10 15 cm -2 . Radiation defects, their introduction rates and full-depth profiles were measured by two complementary methods - the capacitance deep level spectroscopy and the high-voltage current transient spectroscopy. Results show that, in the vicinity of the anode junction, the profile of vacancy-related defect centers is strongly influenced by electric field and an excessive generation of vacancies. In the bulk, the slope of the profile can be derived from the distribution of absorbed dose taking into the account the threshold energy necessary for Frenkel pair formation and the dependency of the defect introduction rate on electron energy

Radiation hardness and charge collection efficiency of lithium irradiated thin silicon diodes

CERN Document Server

Boscardin, Maurizio; Bruzzi, Mara; Candelori, Andrea; Focardi, Ettore; Khomenkov, Volodymyr P; Piemonte, Claudio; Ronchin, S; Tosi, C; Zorzi, N

2005-01-01

Due to their low depletion voltage, even after high particle fluences, improved tracking precision and momentum resolution, and reduced material budget, thin substrates are one of the possible choices to provide radiation hard detectors for future high energy physics experiments. In the framework of the CERN RD50 Collaboration, we have developed PIN diode detectors on membranes obtained by locally thinning the silicon substrate by means of TMAH etching from the wafer backside. Diodes of different shapes and sizes have been fabricated on 50- mu m and 100- mu m thick membranes and tested, showing a low leakage current (of 300 nA/cm/sup 3/) and a very low depletion voltage (in the order of 1 V for the 50 mu m membrane) before irradiation. Radiation damage tests have been performed with 58 MeV lithium (Li) ions up to the fluence of 10/sup 14/ Li/cm/sup 2/ in order to determine the depletion voltage and leakage current density increase after irradiation. Charge collection efficiency tests carried out with a beta /...

Ionization-induced rearrangement of defects in silicon

International Nuclear Information System (INIS)

Vinetskij, V.L.; Manojlo, M.A.; Matvijchuk, A.S.; Strikha, V.I.; Kholodar', G.A.

1988-01-01

Ionizing factor effect on defect rearrangement in silicon including centers with deep local electron levels in the p-n-transition region is considered. Deep center parameters were determined using non-steady-state capacity spectroscopy of deep levels (NCDLS) method. NCDLS spectrum measurement was performed using source p + -n - diodes and after their irradiation with 15 keV energy electrons or laser pulses. It is ascertained that in silicon samples containing point defect clusters defect rearrangement under ionizing factor effect takes place, i.e. deep level spectra are changed. This mechanism is efficient in case of silicon irradiation with subthreshold energy photons and electrons and can cause degradation of silicon semiconducting structures

Short p-type silicon microstrip detectors in 3D-stc technology

Energy Technology Data Exchange (ETDEWEB)

Eckert, S. [Physikalisches Institut, Albert-Ludwigs-Universitaet Freiburg, Hermann-Herder Strasse 3b, D-79104 Freiburg i. Br. (Germany)], E-mail: simon.eckert@physik.uni-freiburg.de; Jakobs, K.; Kuehn, S.; Parzefall, U. [Physikalisches Institut, Albert-Ludwigs-Universitaet Freiburg, Hermann-Herder Strasse 3b, D-79104 Freiburg i. Br. (Germany); Dalla-Betta, G.-F.; Zoboli, A. [Dipartimento di Ingegneria e Scienza dell' Informazione, Universita degli Studi di Trento, via Sommarive 14, I-38050 Povo di Trento (Italy); Pozza, A.; Zorzi, N. [FBK-irst Trento, Microsystems Division, via Sommarive 18, I-38050 Povo di Trento (Italy)

2008-10-21

The luminosity upgrade of the Large Hadron Collider (LHC), the sLHC, will constitute an extremely challenging radiation environment for tracking detectors. Significant improvements in radiation hardness are needed to cope with the increased radiation dose, requiring new tracking detectors. In the upgraded ATLAS detector the region from 20 to 50 cm distance to the beam will be covered by silicon strip detectors (SSD) with short strips. These will have to withstand a 1 MeV neutron equivalent fluence of about 1x10{sup 15}n{sub eq}/cm{sup 2}, hence extreme radiation resistance is necessary. For the short strips, we propose to use SSD realised in the radiation tolerant 3D technology, where rows of columns-etched into the silicon bulk-are joined together to form strips. To demonstrate the feasibility of 3D SSD for the sLHC, we have built prototype modules using 3D-single-type-column (stc) SSD with short strips and front-end electronics from the present ATLAS SCT. The modules were read out with the SCT Data Acquisition system and tested with an IR-laser. We report on the performance of these 3D modules, in particular the noise at 40 MHz which constitutes a measurement of the effective detector capacitance. Conclusions about options for using 3D SSD detectors for tracking at the sLHC are drawn.

A Design of a Terahertz Microstrip Bandstop Filter with Defected Ground Structure

Directory of Open Access Journals (Sweden)

Arjun Kumar

2013-01-01

Full Text Available A planar microstrip terahertz (THz bandstop filter has been proposed with defected ground structure with high insertion loss (S21 in a stopband of −25.8 dB at 1.436 THz. The parameters of the circuit model have been extracted from the EM simulation results. A dielectric substrate of Benzocyclobutene (BCB is used to realize a compact bandstop filter using modified hexagonal dumbbell-shape defected ground structure (DB-DGS. In this paper, a defected ground structure topology is used in a λ/4, 50 Ω microstrip line at THz frequency range for compactness. No article has been reported on the microstrip line at terahertz frequency regime using DGS topology. The proposed filter can be used for sensing and detection in biomedical instruments in DNA testing. All the simulations/cosimulations are carried out using a full-wave EM simulator CST V.9 Microwave Studio, HFSS V.10, and Agilent Design Suite (ADS.

Doping of silicon by laser-induced diffusion

International Nuclear Information System (INIS)

Pretorius, R.; Allie, M.S.

1986-01-01

This report gives information on the doping of silicon by laser-induced diffusion, modelling and heat-flow calculation, doping from evaporated layers and silicon self-diffusion during pulsed laser irradiation. In order to tailor dopant profiles accurately a knowledge of the heat flow and the melt depths attained as a function of laser energy and material type is crucial. The heat flow calculations described can be used in conjuntion with most diffusion equations in order to predict the redistribution of the deposited dopant which occurs as a result of liquid phase diffusion during the melting period. Doping of Si was carried out by evaporating this films of Sb, In and Bi 10 to 300 A thick, onto the substrates. During pulsed laser irradiation the dopant film and underlying silicon substrate is melted and the dopant incorporated into the crystal lattice during recrystallization. Radioactive 31 Si(T1/2=2,62h) was used as a tracer to measure the self-diffusion of silicon in silicon during pulsed laser (pulsewidth = 30ns, wavelength = 694nm) irradiation

Design, simulation and analysis a microstrip antenna using PU-EFB substrate

Science.gov (United States)

Mahmud, S. N. S.; Jusoh, M. A.; Jasim, S. E.; Zamani, A. H.; Abdullah, M. H.

2018-04-01

A low cost, light weight and easy to fabricate are the most important factor for future antennas. Microstrip patch antennas offer these advantages and suitable for communication and sensor application. This paper presents a design of simple microstrip patch antenna working on operating frequency of 2.4 GHz. The designed process has been carried out using MATLAB and HFSS software by entering 2.3 for the dielectric constant of PU-EFB. The results showed that high return loss, low bandwidth and good antenna radiation efficiency of which are -21.98 dB, 0.28 dB and 97.33%, respectively.

The Birmingham Irradiation Facility

International Nuclear Information System (INIS)

Dervan, P.; French, R.; Hodgson, P.; Marin-Reyes, H.; Wilson, J.

2013-01-01

At the end of 2012 the proton irradiation facility at the CERN PS will shut down for two years. With this in mind, we have been developing a new ATLAS scanning facility at the University of Birmingham Medical Physics cyclotron. With proton beams of energy approximately 30 MeV, fluences corresponding to those of the upgraded Large Hadron Collider (HL-LHC) can be reached conveniently. The facility can be used to irradiate silicon sensors, optical components and mechanical structures (e.g. carbon fibre sandwiches) for the LHC upgrade programme. Irradiations of silicon sensors can be carried out in a temperature controlled cold box that can be scanned through the beam. The facility is described in detail along with the first tests carried out with mini (1×1 cm 2 ) silicon sensors

The Birmingham Irradiation Facility

CERN Document Server

Dervan, P; Hodgson, P; Marin-Reyes, H; Wilson, J

2013-01-01

At the end of 2012 the proton irradiation facility at the CERN PS [1] will shut down for two years. With this in mind, we have been developing a new ATLAS scanning facility at the University of Birmingham Medical Physics cyclotron. With proton beams of energy approximately 30 MeV, fluences corresponding to those of the upgraded Large Hadron Collider (HL-LHC) can be reached conveniently. The facility can be used to irradiate silicon sensors, optical components and mechanical structures (e.g. carbon fibre sandwiches) for the LHC upgrade programme. Irradiations of silicon sensors can be carried out in a temperature controlled cold box that can be scanned through the beam. The facility is described in detail along with the first tests carried out with mini (1 x 1 cm^2 ) silicon sensors.

Charge collection and space charge distribution in neutron-irradiated epitaxial silicon detectors

International Nuclear Information System (INIS)

Poehlsen, Thomas

2010-04-01

In this work epitaxial n-type silicon diodes with a thickness of 100 μm and 150 μm are investigated. After neutron irradiation with fluences between 10 14 cm -2 and 4 x 10 15 cm -2 annealing studies were performed. CV-IV curves were taken and the depletion voltage was determined for different annealing times. All investigated diodes with neutron fluences greater than 2 x 10 14 cm -2 showed type inversion due to irradiation. Measurements with the transient current technique (TCT) using a pulsed laser were performed to investigate charge collection effects for temperatures of -40 C, -10 C and 20 C. The charge correction method was used to determine the effective trapping time τ eff . Inconsistencies of the results could be explained by assuming field dependent trapping times. A simulation of charge collection could be used to determine the field dependent trapping time τ eff (E) and the space charge distribution in the detector bulk. Assuming a linear field dependence of the trapping times and a linear space charge distribution the data could be described. Indications of charge multiplication were seen in the irradiated 100 μm thick diodes for all investigated fluences at voltages above 800 V. The space charge distribution extracted from TCT measurements was compared to the results of the CV measurements and showed good agreement. (orig.)

Effects of keV electron irradiation on the avalanche-electron generation rates of three donors on oxidized silicon

International Nuclear Information System (INIS)

Sah, C.; Sun, J.Y.; Tzou, J.J.

1983-01-01

After keV electron beam irradiation of oxidized silicon, the avalanche-electron-injection generation rates and densities of the bulk compensating donor, the interface states, and the turnaround trap all increase. Heating at 200 0 C can anneal out these three donor-like traps, however, it cannot restore the generation rates back to their original and lower pre-keV electron irradiation values. The experimental results also indicate that all three traps may be related to the same mobile impurity species whose bonds are loosened by the keV electrons and then broken or released by the avalanche injected electrons

Design of microstrip patch antennas using knowledge insertion through retraining

Science.gov (United States)

Divakar, T. V. S.; Sudhakar, A.

2018-04-01

The traditional way of analyzing/designing neural network is to collect experimental data and train neural network. Then, the trained neural network acts as global approximate function. The network is then used to calculate parameters for unknown configurations. The main drawback of this method is one does not have enough experimental data, cost of prototypes being a major factor [1-4]. Therefore, in this method the author collected training data from available approximate formulas with in full design range and trained the network with it. After successful training, the network is retrained with available measured results. This simple way inserts experimental knowledge into the network [5]. This method is tested for rectangular microstrip antenna and circular microstrip antenna.

Effects of electron irradiation and temperature on 1 ohm-cm and 10 ohm-cm silicon solar cells

Science.gov (United States)

Nicoletta, C. A.

1973-01-01

One OHM-cm and 10 OHM-cm silicon solar cells were exposed to 1.0 MeV electrons at a fixed flux of 10 to the 11th power e/sq cm/sec and fluences of 10 to the 13th power, 10 to the 14th power and 10 to the 15th power e/sq.cm. 1-V curves of the cells were made at room temperature, - 63 C and + or - 143 C after each irradiation. A value of 139.5 mw/sq cm was used as AMO incident energy rate per unit area. The 10 OHM-cm cells appear more efficient than 1 OHM-cm cells after exposure to a fluence greater than 10 to the 14th power e/sq cm. The 1.0 MeV electron damage coefficients for both 1 OHM-cm and 10 OHM-cm cells are somewhat less than those for previously irradiated cells at room temperature. The values of the damage coefficients increase as the cell temperatures decrease. Efficiencies pertaining to maximum power output are about the same as those of n on p silicon cells evaluated previously.

Microstrip Patch Sensor for Salinity Determination.

Science.gov (United States)

Lee, Kibae; Hassan, Arshad; Lee, Chong Hyun; Bae, Jinho

2017-12-18

In this paper, a compact microstrip feed inset patch sensor is proposed for measuring the salinities in seawater. The working principle of the proposed sensor depends on the fact that different salinities in liquid have different relative permittivities and cause different resonance frequencies. The proposed sensor can obtain better sensitivity to salinity changes than common sensors using conductivity change, since the relative permittivity change to salinity is 2.5 times more sensitive than the conductivity change. The patch and ground plane of the proposed sensor are fabricated by conductive copper spray coating on the masks made by 3D printer. The fabricated patch and the ground plane are bonded to a commercial silicon substrate and then attached to 5 mm-high chamber made by 3D printer so that it contains only 1 mL seawater. For easy fabrication and testing, the maximum resonance frequency was selected under 3 GHz and to cover salinities in real seawater, it was assumed that the salinity changes from 20 to 35 ppt. The sensor was designed by the finite element method-based ANSYS high-frequency structure simulator (HFSS), and it can detect the salinity with 0.01 ppt resolution. The designed sensor has a resonance frequency separation of 37.9 kHz and reflection coefficients under -20 dB at the resonant frequencies. The fabricated sensor showed better performance with average frequency separation of 48 kHz and maximum reflection coefficient of -35 dB. By comparing with the existing sensors, the proposed compact and low-cost sensor showed a better detection capability. Therefore, the proposed patch sensor can be utilized in radio frequency (RF) tunable sensors for salinity determination.

Radiation effects in the infrared absorption and the silicon structure

International Nuclear Information System (INIS)

Groza, A.A.; Litovchenko, P.G.; Starchik, M.Yi.

2006-01-01

The results of the long-term studies of the silicon irradiated by the high-energy particles are systemised. Using of the electrons, protons, reactor neutrons for irradiation and the wide range of the fluence irradiation have given the possibility to the authors to obtain the information on the character of the formed damages in the lattice of the silicon, to compare the effectiveness of the different damage input depending on the irradiation type, to obtain the information on the radiation damage reconstruction, their impact to the oxygen impurity behaviour, which influences substantially as the silicon properties, as the devices characteristics to be developed on its base

77 GHz MEMS antennas on high-resistivity silicon for linear and circular polarization

KAUST Repository

Sallam, M. O.

2011-07-01

Two new MEMS antennas operating at 77 GHz are presented in this paper. The first antenna is linearly polarized. It possesses a vertical silicon wall that carries a dipole on top of it. The wall is located on top of silicon substrate covered with a ground plane. The other side of the substrate carries a microstrip feeding network in the form of U-turn that causes 180 phase shift. This phase-shifter feeds the arms of the dipole antenna via two vertical Through-Silicon Vias (TSVs) that go through the entire wafer. The second antenna is circularly polarized and formed using two linearly polarized antennas spatially rotated with respect to each other by 90 and excited with 90 phase shift. Both antennas are fabricated using novel process flow on a single high-resistivity silicon wafer via bulk micromachining. Only three processing steps are required to fabricate these antennas. The proposed antennas have appealing characteristics, such as high polarization purity, high gain, and high radiation efficiency. © 2011 IEEE.

A new irradiation method with a neutron filter for silicon neutron transmutation doping at the Japan research reactor no. 3 (JRR-3).

Science.gov (United States)

Komeda, Masao; Kawasaki, Kozo; Obara, Toru

2013-04-01

We studied a new silicon irradiation holder with a neutron filter designed to make the vertical neutron flux profile uniform. Since an irradiation holder has to be made of a low activation material, we applied aluminum blended with B4C as the holder material. Irradiation methods to achieve uniform flux with a filter are discussed using Monte-Carlo calculation code MVP. Validation of the use of the MVP code for the holder's analyses is also discussed via characteristic experiments. Copyright © 2013 Elsevier Ltd. All rights reserved.

Recombination luminescence in irradiated silicon - Effects of thermal annealing and lithium impurity.

Science.gov (United States)

Johnson, E. S.; Compton, W. D.

1971-01-01

Use of luminescence in irradiated silicon to determine the thermal stability of the defects responsible for the recombination. It is found that the defect responsible for the zero-phonon line at 0.97 eV has an annealing behavior similar to that of the divacancy and that the zero-phonon line at 0.79 eV anneals in a manner similar to the G-15 or K-center. Annealing at temperatures up to 500 C generates other defects whose luminescence is distinct from that seen previously. Addition of lithium to the material produces defects with new characteristic luminescence. Of particular importance is a defect with a level at E sub g -1.045 eV.

Surface and morphological features of laser-irradiated silicon under vacuum, nitrogen and ethanol

Energy Technology Data Exchange (ETDEWEB)

Hayat, Asma, E-mail: asmahayat@gcu.edu.pk; Bashir, Shazia; Akram, Mahreen; Mahmood, Khaliq; Iqbal, Muhammad Hassan

2015-12-01

Highlights: • Laser irradiation effects on Si surface have been explored. • An Excimer Laser was used as a source. • SEM analysis was performed to explore surface morphology. • Raman spectroscopy analysis was carried out to find crystallographical alterations. - Abstract: Laser-induced surface and structural modification of silicon (Si) has been investigated under three different environments of vacuum, nitrogen (100 Torr) and ethanol. The interaction of 1000 pulses of KrF (λ ≈ 248 nm, τ ≈ 18 ns, repetition rate ≈ 30 Hz) Excimer laser at two different fluences of 2.8 J/cm{sup 2} and 4 J/cm{sup 2} resulted in formation of various kinds of features such as laser induced periodic surface structures (LIPSS), spikes, columns, cones and cracks. Surface morphology has been observed by Scanning Electron Microscope (SEM). Whereas, structural modification of irradiated targets is explored by Raman spectroscopy. SEM analysis exhibits a non-uniform distribution of micro-scale pillars and spikes at the central ablated regime of silicon irradiated at low laser fluence of 2.8 J/cm{sup 2} under vacuum. Whereas cones, pits, cavities and ripples like features are seen at the boundaries. At higher fluence of 4 J/cm{sup 2}, laser induced periodic structures as well as micro-columns are observed. In the case of ablation in nitrogen environment, melting, splashing, self-organized granular structures and cracks along with redeposition are observed at lower fluence. Such types of small scaled structures in nitrogen are attributed to confinement and shielding effects of nitrogen plasma. Whereas, a crater with multiple ablative layers is formed in the case of ablation at higher fluence. Significantly different surface morphology of Si is observed in the case of ablation in ethanol. It reveals the formation of cavities along with small scale pores and less redeposition. These results reveal that the growth of surface and morphological features of irradiated Si are strongly