WorldWideScience

Sample records for iron-cobalt arsenides srfe2-xcoxas2

  1. Synthesis and characterization of iron cobalt (FECO) nanorods ...

    African Journals Online (AJOL)

    Synthesis and characterization of iron cobalt (FECO) nanorods prepared by simple ... shaped by increasing annealing temperature from room temperature to 800 ... Keywords: FeCo nanoparticles, sodium borohydrid, CTAB, chemical synthesis ...

  2. Assessment of polyphase sintered iron-cobalt-iron boride cermets

    International Nuclear Information System (INIS)

    Nowacki, J.; Pieczonka, T.

    2004-01-01

    Sintering of iron, cobalt and boron powders has been analysed. As a result iron-iron boride, Fe-Fe 2 B and iron/cobalt boride with a slight admixture of molybdenum, Fe - Co - (FeMoCo) 2 B cermets have been produced. Iron was introduced to the mixture as the Astalloy Mo Hoeganaes grade powder. Elemental amorphous boron powder was used, and formation of borides occurred both during heating and isothermal sintering periods causing dimensional changes of the sintered body. Dilatometry was chosen to control basic phenomena taking place during multiphase sintering of investigated systems. The microstructure and phase constituents of sintered compacts were controlled as well. The cermets produced were substituted to: metallographic tests, X-ray analysis, measurements of hardness and of microhardness, and of wear in the process of sliding dry friction. Cermets are made up of two phases; hard grains of iron - cobalt boride, (FeCo) 2 B (1800 HV) constituting the reinforcement and a relatively soft and plastic eutectic mixture Fe 2 B - Co (400-500 HV) constituting the matrix. (author)

  3. Calcium-assisted reduction of cobalt ferrite nanoparticles for nanostructured iron cobalt with enhanced magnetic performance

    International Nuclear Information System (INIS)

    Qi, B.; Andrew, J. S.; Arnold, D. P.

    2017-01-01

    This paper demonstrates the potential of a calcium-assisted reduction process for synthesizing fine-grain (~100 nm) metal alloys from metal oxide nanoparticles. To demonstrate the process, an iron cobalt alloy (Fe_6_6Co_3_4) is obtained by hydrogen annealing 7-nm cobalt ferrite (CoFe_2O_4) nanoparticles in the presence of calcium granules. The calcium serves as a strong reducing agent, promoting the phase transition from cobalt ferrite to a metallic iron cobalt alloy, while maintaining high crystallinity. Magnetic measurements demonstrate the annealing temperature is the dominant factor of tuning the grain size and magnetic properties. Annealing at 700 °C for 1 h maximizes the magnetic saturation, up to 2.4 T (235 emu/g), which matches that of bulk iron cobalt.

  4. Calcium-assisted reduction of cobalt ferrite nanoparticles for nanostructured iron cobalt with enhanced magnetic performance

    Energy Technology Data Exchange (ETDEWEB)

    Qi, B. [University of Florida, Interdisciplinary Microsystems Group, Department of Electrical and Computer Engineering (United States); Andrew, J. S. [University of Florida, Department of Materials Science and Engineering (United States); Arnold, D. P., E-mail: darnold@ufl.edu [University of Florida, Interdisciplinary Microsystems Group, Department of Electrical and Computer Engineering (United States)

    2017-03-15

    This paper demonstrates the potential of a calcium-assisted reduction process for synthesizing fine-grain (~100 nm) metal alloys from metal oxide nanoparticles. To demonstrate the process, an iron cobalt alloy (Fe{sub 66}Co{sub 34}) is obtained by hydrogen annealing 7-nm cobalt ferrite (CoFe{sub 2}O{sub 4}) nanoparticles in the presence of calcium granules. The calcium serves as a strong reducing agent, promoting the phase transition from cobalt ferrite to a metallic iron cobalt alloy, while maintaining high crystallinity. Magnetic measurements demonstrate the annealing temperature is the dominant factor of tuning the grain size and magnetic properties. Annealing at 700 °C for 1 h maximizes the magnetic saturation, up to 2.4 T (235 emu/g), which matches that of bulk iron cobalt.

  5. Redox transitions of chromium, manganese, iron, cobalt and nickel protoporphyrins in aqueous solution

    NARCIS (Netherlands)

    de Groot, M.T.; Koper, M.T.M.

    2008-01-01

    The electrochemical redox behavior of immobilized chromium, manganese, iron, cobalt, and nickel protoporphyrins IX has been investigated over the pH 0–14 range. In the investigated potential domain the metalloporphyrins were observed in four different oxidation states (MI, MII, MIII and MIV). The

  6. Novel iron-cobalt derivatised lithium iron phosphate nanocomposite for lithium ion battery cathode

    CSIR Research Space (South Africa)

    Ikpo, CO

    2013-01-01

    Full Text Available Described herein is the electrochemical study conducted on lithium ion battery cathode material consisting of composite of lithium iron phosphate (LiFePO(sub4), iron-cobalt derivatised carbon nanotubes (FeCo-CNT) and polyaniline (PA) nanomaterials...

  7. Toxicity of indium arsenide, gallium arsenide, and aluminium gallium arsenide

    International Nuclear Information System (INIS)

    Tanaka, Akiyo

    2004-01-01

    Gallium arsenide (GaAs), indium arsenide (InAs), and aluminium gallium arsenide (AlGaAs) are semiconductor applications. Although the increased use of these materials has raised concerns about occupational exposure to them, there is little information regarding the adverse health effects to workers arising from exposure to these particles. However, available data indicate these semiconductor materials can be toxic in animals. Although acute and chronic toxicity of the lung, reproductive organs, and kidney are associated with exposure to these semiconductor materials, in particular, chronic toxicity should pay much attention owing to low solubility of these materials. Between InAs, GaAs, and AlGaAs, InAs was the most toxic material to the lung followed by GaAs and AlGaAs when given intratracheally. This was probably due to difference in the toxicity of the counter-element of arsenic in semiconductor materials, such as indium, gallium, or aluminium, and not arsenic itself. It appeared that indium, gallium, or aluminium was toxic when released from the particles, though the physical character of the particles also contributes to toxic effect. Although there is no evidence of the carcinogenicity of InAs or AlGaAs, GaAs and InP, which are semiconductor materials, showed the clear evidence of carcinogenic potential. It is necessary to pay much greater attention to the human exposure of semiconductor materials

  8. Magnetism of iron, cobalt and nickel clusters studied in molecular beams

    International Nuclear Information System (INIS)

    Billas, I.

    1995-01-01

    The magnetic properties of iron, cobalt and nickel clusters in a molecular beam have been studied in a magnetic Stern-Gerlach deflection experiment. The molecular beam apparatus consists of a laser vaporization cluster source with high intensity and stability and a high-resolution time-of-flight mass spectrometer for the deflection measurements. Several novel experimental features have been developed in this work, like a nozzle which can be heated up to 1000 K and a chopper to measure the dwell times of the clusters in the source and their corresponding velocities. These new developments have allowed the measurement and the control of the temperature of the free clusters. The Stern-Gerlach deflection experiments have been performed on Fe, Co and Ni clusters in the mass range from 20 to 700 atoms. All clusters show single-sided deflection toward increasing field. This observation indicates that a spin relaxation process occurs within the isolated clusters. The participation of both the cluster rotational and vibrational degrees of freedom to the spin relaxation has been experimentally demonstrated. The cluster magnetization has been determined as a function of applied magnetic field B and as a function of dwell times of the clusters in the source before the supersonic expansion into vacuum. Superparamagnetic behavior has been observed when the cluster rotational speed is much larger than the Larmor frequency of the cluster magnetic moment μ in the field B. In particular, for μB<< kT, the cluster magnetization depends on B/T. For lower rotational speeds, reduced values of the magnetization have been observed. The magnetic moments of the superparamagnetic Fe, Co and Ni clusters have been measured as a) a function of cluster size N at low temperature and b) as a function of cluster temperature T for various size ranges. (author) figs., tabs., refs

  9. Magnetic Properties of Iron-Cobalt Oxide Nanocomposites Synthesized in Polystyrene Resin Matrix*

    Science.gov (United States)

    Vaishnava, P. P.; Senaratne, U.; Rodak, D.; Kroll, E.; Tsoi, G.; Naik, R.; Naik, V.; Wenger, L. E.; Tao, Qu; Boolchand, P.; Suryanarayanan, R.

    2004-03-01

    Magnetic nanoparticles have potential applications in memory devices and medical technology. Magnetic iron-cobalt oxide nanoparticles were prepared by in situ precipitation in an ion exchange resin using the method of Ziolo et al^1. The ion exchange resin, consisting of sulfonated divinyl benzene cross linked polystyrene, was exposed to different iron and cobalt salt solutions: a) 4FeCl2 + CoCl2 b) 9FeCl2 + CoCl2 c) 4FeCl3 + CoCl2 d) 9FeCl3 + CoCl_2. The ions bound to the resin are then oxidized with hydrogen peroxide in an alkaline media with mild heat. The resulting nanocomposites were characterized by X-ray diffraction (XRD), Transmission Electron Microscopy (TEM), Fe^57 Mossbauer Spectroscopy and SQUID magnetometry. It was found that the oxide composition, particle size distribution, magnetic properties including blocking temperature and the amount of superparamagnetic phases are strongly influenced by the stoichiometry of the starting FeCl_2, FeCl_3, and CoCl2 solutions. Three major phases CoFe_2O_4, Fe_3O4 and γ-Fe_2O3 have been identified. The nanocomposites prepared using Fe^2+ and Co^2+ contain larger nanoparticles (10 nm) than those prepared by Fe^3+ and Co^2+ (3 nm) . The details of the structural characterization by XRD and TEM measurements and magnetic characteristics will be presented. *Research supported by NSF grant DGE 980720 ^1Ziolo et al, Science, 257, 5067 (1992).

  10. On the rolling of hard-to-work iron-cobalt alloys with application of electric current of high density

    International Nuclear Information System (INIS)

    Klimov, K.M.; Mordukhovich, A.M.; Glezer, A.M.; Molotilov, B.V.

    1981-01-01

    Results on experimental fabrication of thin sheets of commercial iron-cobalt 49KF alloy (Se-Co-2%V) without preliminary quenching and intermediate annealings by rolling with application of high-density electric current are considered. It is shown that rolling with application of high-density electric current in the deformation zone permits to obtain thin sheets of difficult-to-form magnetically soft materials without preliminary thermal treatments. Electric current effect on metal in the deformation zone results in the increase of dislocation mobility and facilitates the cross glide [ru

  11. High-solid mesophilic methane fermentation of food waste with an emphasis on Iron, Cobalt, and Nickel requirements.

    Science.gov (United States)

    Qiang, Hong; Lang, Dong-Li; Li, Yu-You

    2012-01-01

    The effect of trace metals on the mesophilic methane fermentation of high-solid food waste was investigated using both batch and continuous experiments. The continuous experiment was conducted by using a CSTR-type reactor with three run. During the first run, the HRT of the reactor was stepwise decreased from 100 days to 30 days. From operation day 50, the reactor efficiency deteriorated due to the lack of trace metals. The batch experiment showed that iron, cobalt, and nickel combinations had a significant effect on food waste. According to the results of the batch experiment, a combination of iron, cobalt, and nickel was added into the CSTR reactor by two different methods at run II, and III. Based on experimental results and theoretical calculations, the most suitable values of Fe/COD, Co/COD, and Ni/COD in the substrate were identified as 200, 6.0, and 5.7 mg/kg COD, respectively. Copyright © 2011 Elsevier Ltd. All rights reserved.

  12. Tungsten carbide encapsulated in nitrogen-doped carbon with iron/cobalt carbides electrocatalyst for oxygen reduction reaction

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Jie; Chen, Jinwei, E-mail: jwchen@scu.edu.cn; Jiang, Yiwu; Zhou, Feilong; Wang, Gang; Wang, Ruilin, E-mail: rl.wang@scu.edu.cn

    2016-12-15

    Graphical abstract: A hybrid catalyst was prepared via a quite green and simple method to achieve an one-pot synthesis of the N-doping carbon, tungsten carbides, and iron/cobalt carbides. It exhibited comparable electrocatalytic activity, higher durability and ability to methanol tolerance compared with commercial Pt/C to ORR. - Highlights: • A novel type of hybrid Fe/Co/WC@NC catalysts have been successfully synthesized. • The hybrid catalyst also exhibited better durability and methanol tolerance. • Multiple effective active sites of Fe{sub 3}C, Co{sub 3}C, WC, and NC help to improve catalytic performance. - Abstract: This work presents a type of hybrid catalyst prepared through an environmental and simple method, combining a pyrolysis of transition metal precursors, a nitrogen-containing material, and a tungsten source to achieve a one-pot synthesis of N-doping carbon, tungsten carbides, and iron/cobalt carbides (Fe/Co/WC@NC). The obtained Fe/Co/WC@NC consists of uniform Fe{sub 3}C and Co{sub 3}C nanoparticles encapsulated in graphitized carbon with surface nitrogen doping, closely wrapped around a plate-like tungsten carbide (WC) that functions as an efficient oxygen reduction reaction (ORR) catalyst. The introduction of WC is found to promote the ORR activity of Fe/Co-based carbide electrocatalysts, which is attributed to the synergistic catalysts of WC, Fe{sub 3}C, and Co{sub 3}C. Results suggest that the composite exhibits comparable electrocatalytic activity, higher durability, and ability for methanol tolerance compared with commercial Pt/C for ORR in alkaline electrolyte. These advantages make Fe/Co/WC@NC a promising ORR electrocatalyst and a cost-effective alternative to Pt/C for practical application as fuel cell.

  13. Synthesis and magnetic properties of cobalt-iron/cobalt-ferrite soft/hard magnetic core/shell nanowires

    Science.gov (United States)

    Leandro Londoño-Calderón, César; Moscoso-Londoño, Oscar; Muraca, Diego; Arzuza, Luis; Carvalho, Peterson; Pirota, Kleber Roberto; Knobel, Marcelo; Pampillo, Laura Gabriela; Martínez-García, Ricardo

    2017-06-01

    A straightforward method for the synthesis of CoFe2.7/CoFe2O4 core/shell nanowires is described. The proposed method starts with a conventional pulsed electrodeposition procedure on alumina nanoporous template. The obtained CoFe2.7 nanowires are released from the template and allowed to oxidize at room conditions over several weeks. The effects of partial oxidation on the structural and magnetic properties were studied by x-ray spectrometry, magnetometry, and scanning and transmission electron microscopy. The results indicate that the final nanowires are composed of 5 nm iron-cobalt alloy nanoparticles. Releasing the nanowires at room conditions promoted surface oxidation of the nanoparticles and created a CoFe2O4 shell spinel-like structure. The shell avoids internal oxidation and promotes the formation of bi-magnetic soft/hard magnetic core/shell nanowires. The magnetic properties of both the initial single-phase CoFe2.7 nanowires and the final core/shell nanowires, reveal that the changes in the properties from the array are due to the oxidation more than effects associated with released processes (disorder and agglomeration).

  14. A Critical Review of Spinel Structured Iron Cobalt Oxides Based Materials for Electrochemical Energy Storage and Conversion

    Directory of Open Access Journals (Sweden)

    Hongyan Gao

    2017-11-01

    Full Text Available Iron cobalt oxides, such as typical FeCo2O4 and CoFe2O4, are two spinel structured transitional metal oxide materials with excellent electrochemical performance. As the electrodes, they have been widely applied in the current energy storage and conversion processes such as supercapacitors, Lithium-ion batteries and fuel cells. Based on synthesis approaches and controlled conditions, these two materials exhibited broad morphologies and nanostructures and thus distinct electrochemical performance. Some of them have shown promising applications as electrodes in energy storage and conversion. The incorporation with other materials to form composites further improved their performance. This review briefly summarized the recent applications of FeCo2O4 and CoFe2O4 in energy storage and conversion, current understandings on mechanisms and especially the relevance of morphologies and structures and composites to electrochemical performance. Some recommendations were finally put forward addressing current issues and future prospects on electrodes of FeCo2O4 and CoFe2O4 based materials in energy storage and conversion, implying there was still space to further optimize their performance.

  15. Thermodynamics of gallium arsenide electrodeposition

    International Nuclear Information System (INIS)

    Perrault, G.G.

    1986-01-01

    Gallium Arsenide is well known as a very interesting compound for photoelectrical devices. Up to now, it has been prepared mostly by high temperature technology, and the authors considered that it might be of interest to set up an electrodeposition technique suitable to prepare thin layers of this compound. A reaction sequence similar to the one observed for Cadmium Sulfide or Cadmium Telluride could be considered. In these cases, the metal chalcogenide is obtained from the precipitation of the metal ions dissolved in the solutions by the reduction product of the metalloidic compound

  16. Metal Contacts to Gallium Arsenide.

    Science.gov (United States)

    Ren, Fan

    1991-07-01

    While various high performance devices fabricated from the gallium arsenide (GaAs) and related materials have generated considerable interest, metallization are fundamental components to all semiconductor devices and integrated circuits. The essential roles of metallization systems are providing the desired electrical paths between the active region of the semiconductor and the external circuits through the metal interconnections and contacts. In this work, in-situ clean of native oxide, high temperature n-type, low temperature n-type and low temperature p-type ohmic metal systems have been studied. Argon ion mill was used to remove the native oxide prior to metal deposition. For high temperature process n-type GaAs ohmic contacts, Tungsten (W) and Tungsten Silicide (WSi) were used with an epitaxial grown graded Indium Gallium Arsenide (InGaAs) layer (0.2 eV) on GaAs. In addition, refractory metals, Molybdenum (Mo), was incorporated in the Gold-Germanium (AuGe) based on n-type GaAs ohmic contacts to replace conventional silver as barrier to prevent the reaction between ohmic metal and chlorine based plasma as well as the ohmic metallization intermixing which degrades the device performance. Finally, Indium/Gold-Beryllium (In/Au-Be) alloy has been developed as an ohmic contact for p-type GaAs to reduce the contact resistance. The Fermi-level pinning of GaAs has been dominated by the surface states. The Schottky barrier height of metal contacts are about 0.8 V regardless of the metal systems. By using p-n junction approach, barrier height of pulsed C-doped layers was achieved as high as 1.4 V. Arsenic implantation into GaAs method was also used to enhance the barrier height of 1.6 V.

  17. Window structure for passivating solar cells based on gallium arsenide

    Science.gov (United States)

    Barnett, Allen M. (Inventor)

    1985-01-01

    Passivated gallium arsenide solar photovoltaic cells with high resistance to moisture and oxygen are provided by means of a gallium arsenide phosphide window graded through its thickness from arsenic rich to phosphorus rich.

  18. Spin Injection in Indium Arsenide

    Directory of Open Access Journals (Sweden)

    Mark eJohnson

    2015-08-01

    Full Text Available In a two dimensional electron system (2DES, coherent spin precession of a ballistic spin polarized current, controlled by the Rashba spin orbit interaction, is a remarkable phenomenon that’s been observed only recently. Datta and Das predicted this precession would manifest as an oscillation in the source-drain conductance of the channel in a spin-injected field effect transistor (Spin FET. The indium arsenide single quantum well materials system has proven to be ideal for experimental confirmation. The 2DES carriers have high mobility, low sheet resistance, and high spin orbit interaction. Techniques for electrical injection and detection of spin polarized carriers were developed over the last two decades. Adapting the proposed Spin FET to the Johnson-Silsbee nonlocal geometry was a key to the first experimental demonstration of gate voltage controlled coherent spin precession. More recently, a new technique measured the oscillation as a function of channel length. This article gives an overview of the experimental phenomenology of the spin injection technique. We then review details of the application of the technique to InAs single quantum well (SQW devices. The effective magnetic field associated with Rashba spin-orbit coupling is described, and a heuristic model of coherent spin precession is presented. The two successful empirical demonstrations of the Datta Das conductance oscillation are then described and discussed.

  19. Low-temperature CVD of iron, cobalt, and nickel nitride thin films from bis[di(tert-butyl)amido]metal(II) precursors and ammonia

    International Nuclear Information System (INIS)

    Cloud, Andrew N.; Abelson, John R.; Davis, Luke M.; Girolami, Gregory S.

    2014-01-01

    Thin films of late transition metal nitrides (where the metal is iron, cobalt, or nickel) are grown by low-pressure metalorganic chemical vapor deposition from bis[di(tert-butyl)amido]metal(II) precursors and ammonia. These metal nitrides are known to have useful mechanical and magnetic properties, but there are few thin film growth techniques to produce them based on a single precursor family. The authors report the deposition of metal nitride thin films below 300 °C from three recently synthesized M[N(t-Bu) 2 ] 2 precursors, where M = Fe, Co, and Ni, with growth onset as low as room temperature. Metal-rich phases are obtained with constant nitrogen content from growth onset to 200 °C over a range of feedstock partial pressures. Carbon contamination in the films is minimal for iron and cobalt nitride, but similar to the nitrogen concentration for nickel nitride. X-ray photoelectron spectroscopy indicates that the incorporated nitrogen is present as metal nitride, even for films grown at the reaction onset temperature. Deposition rates of up to 18 nm/min are observed. The film morphologies, growth rates, and compositions are consistent with a gas-phase transamination reaction that produces precursor species with high sticking coefficients and low surface mobilities

  20. Corrosion study of iron-cobalt alloys for MRI-based propulsion embedded in untethered microdevices operating in the vascular network.

    Science.gov (United States)

    Pouponneau, Pierre; Savadogo, Oumarou; Napporn, Teko; Yahia, L'hocine; Martel, Sylvain

    2010-04-01

    Our group have shown in an experiment performed in the carotid artery of a living swine that magnetic gradients generated by a clinical magnetic resonance imaging (MRI) system could propel and navigate untethered medical microdevices and micro-nanorobots in the human vasculature. The main problem with these devices is that the metal necessary for magnetic propulsion may corrode and induce cytotoxic effects. The challenge, then, is to find an alloy with low corrosion yet providing an adequate magnetization level for propulsion in often stringent physiological conditions. Because of their high magnetization, we studied the corrosion behavior of two iron-cobalt alloys, Permendur (49% Fe, 49% Co, 2% V) and Vacoflux 17 (81% Fe, 17% Co, 2% Cr), in physiological solution by potentiodynamic polarization assay, surface analysis, and corrosion electrolyte analysis. Both alloys exhibited low corrosion parameters such as a corrosion potential (E(corr)) of -0.57 V/SCE and E(corr) of -0.42 V/SCE for Vacoflux 17. The surface of Permendur samples was homogenously degraded. Vacoflux 17 surface was impaired by cracks and crevices. Both alloys had a stoichiometric dissolution in the electrolyte, and they released enough cobalt to induce cytotoxic effects. This study concluded that Fe-Co alloys could be used preferably in medical microdevices if they were coated so as not to come in contact with physiological solutions.

  1. Normal vibrations in gallium arsenide

    International Nuclear Information System (INIS)

    Dolling, G.; Waugh, J.L.T.

    1964-01-01

    The triple axis crystal spectrometer at Chalk River has been used to observe coherent slow neutron scattering from a single crystal of pure gallium arsenide at 296 o K. The frequencies of normal modes of vibration propagating in the [ζ00], (ζζζ], and (0ζζ] crystal directions have been determined with a precision of between 1 and 2·5 per cent. A limited number of normal modes have also been studied at 95 and 184 o K. Considerable difficulty was experienced in obtaining welt resolved neutron peaks corresponding to the two non-degenerate optic modes for very small wave-vector, particularly at 296 o K. However, from a comparison of results obtained under various experimental conditions at several different points in reciprocal space, frequencies (units 10 12 c/s) for these modes (at 296 o K) have been assigned: T 8·02±0·08 and L 8·55±02. Other specific normal modes, with their measured frequencies are (a) (1,0,0): TO 7·56 ± 008, TA 2·36 ± 0·015, LO 7·22 ± 0·15, LA 6·80 ± 0·06; (b) (0·5, 0·5, 0·5): TO 7·84 ± 0·12, TA 1·86 ± 0·02, LO 7·15 ± 0·07, LA 6·26 ± 0·10; (c) (0, 0·65, 0·65): optic 8·08 ±0·13, 7·54 ± 0·12 and 6·57 ± 0·11, acoustic 5·58 ± 0·08, 3·42 · 0·06 and 2·36 ± 004. These results are generally slightly lower than the corresponding frequencies for germanium. An analysis in terms of various modifications of the dipole approximation model has been carried out. A feature of this analysis is that the charge on the gallium atom appears to be very small, about +0·04 e. The frequency distribution function has been derived from one of the force models. (author)

  2. Normal vibrations in gallium arsenide

    Energy Technology Data Exchange (ETDEWEB)

    Dolling, G; Waugh, J L T

    1964-07-01

    The triple axis crystal spectrometer at Chalk River has been used to observe coherent slow neutron scattering from a single crystal of pure gallium arsenide at 296{sup o}K. The frequencies of normal modes of vibration propagating in the [{zeta}00], ({zeta}{zeta}{zeta}], and (0{zeta}{zeta}] crystal directions have been determined with a precision of between 1 and 2{center_dot}5 per cent. A limited number of normal modes have also been studied at 95 and 184{sup o}K. Considerable difficulty was experienced in obtaining welt resolved neutron peaks corresponding to the two non-degenerate optic modes for very small wave-vector, particularly at 296{sup o}K. However, from a comparison of results obtained under various experimental conditions at several different points in reciprocal space, frequencies (units 10{sup 12} c/s) for these modes (at 296{sup o}K) have been assigned: T 8{center_dot}02{+-}0{center_dot}08 and L 8{center_dot}55{+-}02. Other specific normal modes, with their measured frequencies are (a) (1,0,0): TO 7{center_dot}56 {+-} 008, TA 2{center_dot}36 {+-} 0{center_dot}015, LO 7{center_dot}22 {+-} 0{center_dot}15, LA 6{center_dot}80 {+-} 0{center_dot}06; (b) (0{center_dot}5, 0{center_dot}5, 0{center_dot}5): TO 7{center_dot}84 {+-} 0{center_dot}12, TA 1{center_dot}86 {+-} 0{center_dot}02, LO 7{center_dot}15 {+-} 0{center_dot}07, LA 6{center_dot}26 {+-} 0{center_dot}10; (c) (0, 0{center_dot}65, 0{center_dot}65): optic 8{center_dot}08 {+-}0{center_dot}13, 7{center_dot}54 {+-} 0{center_dot}12 and 6{center_dot}57 {+-} 0{center_dot}11, acoustic 5{center_dot}58 {+-} 0{center_dot}08, 3{center_dot}42 {center_dot} 0{center_dot}06 and 2{center_dot}36 {+-} 004. These results are generally slightly lower than the corresponding frequencies for germanium. An analysis in terms of various modifications of the dipole approximation model has been carried out. A feature of this analysis is that the charge on the gallium atom appears to be very small, about +0{center_dot}04 e. The

  3. Mass-selected iron-cobalt alloy clusters. Correlation of magnetic and structural properties; Massenselektierte Eisen-Kobalt-Legierungscluster. Korrelation magnetischer und struktureller Eigenschaften

    Energy Technology Data Exchange (ETDEWEB)

    Bulut, Furkan

    2008-10-13

    In this work, I present results concerning structural and magnetic properties of massselected iron-cobalt alloy clusters with diameters between 5 and 15 nm. I have studied the structure of FeCo alloy clusters with high resolution transmission electron microscopy (HRTEM) and scanning tunneling microscopy (STM). I have also investigated the crystalline structure of pure iron and pure cobalt clusters with HRTEM to ensure a reliable determination of the lattice parameter for the alloy clusters. The FeCo nanoparticles have a truncated dodecahedral shape with a CsCl-structure. The clusters were produced with a continuously working arc cluster ion source and subsequently mass-selected with an electrostatic quadrupole deflector. The composition of the alloy clusters was checked with energy dispersive x-ray spectroscopy (EDX). The lateral size distribution was investigated by TEM and the height of the deposited FeCo clusters on the (110) surface of tungsten was determined by STM. Comparing the results I have observed that the supported clusters were flattened due to the high surface energy of W(110). The decrease in height of the mass-selected supported clusters amounts to about 1 nm. Furthermore, element specific magnetic studies performed by means of X-ray magnetic circular dichroism (XMCD) have shown that magnetic moments of Fe{sub 50}Co{sub 50} alloy clusters are in good agreement with the theoretically expected values in the bulk. I have also examined the behavior of the alloy clusters at elevated temperatures. The clusters exhibit an anisotropic melting on the W(110) surface. (orig.)

  4. Optical Characterization of Thick Growth Orientation-Patterned Gallium Arsenide

    National Research Council Canada - National Science Library

    Meyer, Joshua W

    2006-01-01

    .... Orientation patterned gallium arsenide (OPGaAs) is a promising nonlinear conversion material because it has broad transparency and can be engineered for specific pump laser and output wavelengths using quasi-phase matching techniques...

  5. Elastic properties of some transition metal arsenides

    Science.gov (United States)

    Nayak, Vikas; Verma, U. P.; Bisht, P. S.

    2018-05-01

    The elastic properties of transition metal arsenides (TMAs) have been studied by employing Wien2K package based on density functional theory in the zinc blende (ZB) and rock salt (RS) phase treating valance electron scalar relativistically. Further, we have also treated them non-relativistically to find out the relativistic effect. We have calculated the elastic properties by computing the volume conservative stress tensor for small strains, using the method developed by Charpin. The obtained results are discussed in paper. From the obtained results, it is clear that the values of C11 > C12 and C44 for all the compounds. The values of shear moduli of these compounds are also calculated. The internal parameter for these compounds shows that ZB structures of these compounds have high resistance against bond order. We find that the estimated elastic constants are in good agreement with the available data.

  6. Synthesis and characterisation of iron, cobalt and gallium complexes wit the redox-active amide ligand systems pyridinocarboxiamidobenzene and hydroxy phenyl oxamide; Synthese und Charakterisierung von Eisen-, Cobalt- und Galliumkomplexen mit den redoxaktiven Amidligandsystemen Pyridincarboxamidobenzol und Hydroxyphenyloxamid

    Energy Technology Data Exchange (ETDEWEB)

    Beckmann, U.

    2001-07-01

    The interactions of the redox-active ligand systems piridinocarboxamidobenzene and hydroxy phenyl oxamide with the metals iron, cobalt and gallium were investigated. It was found that metal complexes with ligands of the pyridinocarboxamidobenzene and hydroxy phenyl oxamide type can be redox-active in the sense of a ligand-centered reaction. This may provide a better understanding of natural catalysis mechanisms and redox processes. [German] In dieser Arbeit wurde die Wechselwirkung der redoxaktiven Ligandsysteme Pyridincarboxamidobenzol und Hydroxyphenyloxamid mit den Metallen Eisen, Cobalt und Gallium untersucht. Es konnte gezeigt werden, dass Metallkomplexe mit Liganden vom Typ Pyridincarboxamidobenzol und Hydroxyphenyloxamid auch im Sinne einer ligandzentrierten Reaktion redoxaktiv sein koennen. Dies kann dazu beitragen, Katalysemechanismen und Redoxprozesse in der Natur besser zu verstehen. (orig.)

  7. Inhalation developmental toxicology studies: Gallium arsenide in mice and rats

    Energy Technology Data Exchange (ETDEWEB)

    Mast, T.J.; Greenspan, B.J.; Dill, J.A.; Stoney, K.H.; Evanoff, J.J.; Rommereim, R.L.

    1990-12-01

    Gallium arsenide is a crystalline compound used extensively in the semiconductor industry. Workers preparing solar cells and gallium arsenide ingots and wafers are potentially at risk from the inhalation of gallium arsenide dust. The potential for gallium arsenide to cause developmental toxicity was assessed in Sprague- Dawley rats and CD-1 (Swiss) mice exposed to 0, 10, 37, or 75 mg/m{sup 3} gallium arsenide, 6 h/day, 7 days/week. Each of the four treatment groups consisted of 10 virgin females (for comparison), and {approx}30 positively mated rats or {approx}24 positively mated mice. Mice were exposed on 4--17 days of gestation (dg), and rats on 4--19 dg. The day of plug or sperm detection was designated as 0 dg. Body weights were obtained throughout the study period, and uterine and fetal body weights were obtained at sacrifice (rats, 20 dg; mice, 18 dg). Implants were enumerated and their status recorded. Live fetuses were sexed and examined for gross, visceral, skeletal, and soft-tissue craniofacial defects. Gallium and arsenic concentrations were determined in the maternal blood and uterine contents of the rats (3/group) at 7, 14, and 20 dg. 37 refs., 11 figs., 30 tabs.

  8. Maskless proton beam writing in gallium arsenide

    Energy Technology Data Exchange (ETDEWEB)

    Mistry, P. [Ion Beam Centre, University of Surrey, Guildford GU2 7XH (United Kingdom) and Nano-Electronics Centre, Advanced Technology Institute, University of Surrey, Guildford GU2 7XH (United Kingdom)]. E-mail: p.mistry@surrey.ac.uk; Gomez-Morilla, I. [Ion Beam Centre, University of Surrey, Guildford GU2 7XH (United Kingdom); Smith, R.C. [Nano-Electronics Centre, Advanced Technology Institute, University of Surrey, Guildford GU2 7XH (United Kingdom); Thomson, D. [Advanced Technology Institute, University of Surrey, Guildford GU2 7XH (United Kingdom); Grime, G.W. [Ion Beam Centre, University of Surrey, Guildford GU2 7XH (United Kingdom); Webb, R.P. [Ion Beam Centre, University of Surrey, Guildford GU2 7XH (United Kingdom); Gwilliam, R. [Ion Beam Centre, University of Surrey, Guildford GU2 7XH (United Kingdom); Jeynes, C. [Ion Beam Centre, University of Surrey, Guildford GU2 7XH (United Kingdom); Cansell, A. [Ion Beam Centre, University of Surrey, Guildford GU2 7XH (United Kingdom); Merchant, M. [Ion Beam Centre, University of Surrey, Guildford GU2 7XH (United Kingdom); Kirkby, K.J. [Ion Beam Centre, University of Surrey, Guildford GU2 7XH (United Kingdom)

    2007-07-15

    Proton beam writing (PBW) is a direct write technique that employs a focused MeV proton beam which is scanned in a pre-determined pattern over a target material which is subsequently electrochemically etched or chemically developed. By changing the energy of the protons the range of the protons can be changed. The ultimate depth of the structure is determined by the range of the protons in the material and this allows structures to be formed to different depths. PBW has been successfully employed on etchable glasses, polymers and semiconductor materials such as silicon (Si) and gallium arsenide (GaAs). This study reports on PBW in p-type GaAs and compares experimental results with computer simulations using the Atlas (copy right) semiconductor device package from SILVACO. It has already been proven that hole transport is required for the electrochemical etching of GaAs using Tiron (4,5-dihydroxy-m-benzenedisulfonic acid, di-sodium salt). PBW in GaAs results in carrier removal in the irradiated regions and consequently minimal hole transport (in these regions) during electrochemical etching. As a result the irradiated regions are significantly more etch resistant than the non-irradiated regions. This allows high aspect ratio structures to be formed.

  9. Maskless proton beam writing in gallium arsenide

    International Nuclear Information System (INIS)

    Mistry, P.; Gomez-Morilla, I.; Smith, R.C.; Thomson, D.; Grime, G.W.; Webb, R.P.; Gwilliam, R.; Jeynes, C.; Cansell, A.; Merchant, M.; Kirkby, K.J.

    2007-01-01

    Proton beam writing (PBW) is a direct write technique that employs a focused MeV proton beam which is scanned in a pre-determined pattern over a target material which is subsequently electrochemically etched or chemically developed. By changing the energy of the protons the range of the protons can be changed. The ultimate depth of the structure is determined by the range of the protons in the material and this allows structures to be formed to different depths. PBW has been successfully employed on etchable glasses, polymers and semiconductor materials such as silicon (Si) and gallium arsenide (GaAs). This study reports on PBW in p-type GaAs and compares experimental results with computer simulations using the Atlas (copy right) semiconductor device package from SILVACO. It has already been proven that hole transport is required for the electrochemical etching of GaAs using Tiron (4,5-dihydroxy-m-benzenedisulfonic acid, di-sodium salt). PBW in GaAs results in carrier removal in the irradiated regions and consequently minimal hole transport (in these regions) during electrochemical etching. As a result the irradiated regions are significantly more etch resistant than the non-irradiated regions. This allows high aspect ratio structures to be formed

  10. White beam synchrotron x-ray topography of gallium arsenide

    International Nuclear Information System (INIS)

    Winter, J.M. Jr.; Green, R.E. Jr.; Corak, W.S.

    1988-01-01

    The defect structure of gallium arsenide was investigated using white beam transmission topography. The samples were cut and polished monocrystal substrates from different suppliers. The goal of the work was to determine the viability of the method for documenting various crystallographic defect structures and establishing their effect on the performance of integrated microwave circuits fabricated on the wafers. The principles of the technique, essentially identical to classical Laue x-ray diffraction, are outlined. Two distinct defect structures were determined in the topographs. Reasons for the defect structures were postulated and the application of the method for quality control assessments of manufacturer-supplied gallium arsenide substrates was assessed

  11. Rutherford backscatter measurements on tellurium and cadmium implanted gallium arsenide

    International Nuclear Information System (INIS)

    Bell, E.C.

    1979-10-01

    The primary aim of the work described in this thesis was to examine implanted layers of the dopant impurities cadmium and tellurium in gallium arsenide and to experimentally assess their potential for producing electrically active layers. 1.5 MeV Rutherford backscattering measurements of lattice disorder and atom site location have been used to assess post implantation thermal annealing and elevated temperature implantations to site the dopant impurities on either gallium or arsenic lattice positions in an otherwise undisordered lattice. Pyrolitically deposited silicon dioxide was used as an encapsulant to prevent thermal dissociation of the gallium arsenide during annealing. It has been shown that high doses of cadmium and tellurium can be implanted without forming amorphous lattice disorder by heating the gallium arsenide during implantation to relatively low temperatures. Atom site location measurements have shown that a large fraction of a tellurium dose implanted at 180 0 C is located on or near lattice sites. Channeled backscatter measurements have shown that there is residual disorder or lattice strain in gallium arsenide implanted at elevated temperatures. The extent of this disorder has been shown to depend on the implanted dose and implantation temperature. The channeling effect has been used to measure annealing of the disorder. (author)

  12. Electron emission from individual indium arsenide semiconductor nanowires

    NARCIS (Netherlands)

    Heeres, E.C.; Bakkers, E.P.A.M.; Roest, A.L.; Kaiser, M.A.; Oosterkamp, T.H.; Jonge, de N.

    2007-01-01

    A procedure was developed to mount individual semiconductor indium arsenide nanowires onto tungsten support tips to serve as electron field-emission sources. The electron emission properties of the single nanowires were precisely determined by measuring the emission pattern, current-voltage curve,

  13. High purity liquid phase epitaxial gallium arsenide nuclear radiation detector

    International Nuclear Information System (INIS)

    Alexiev, D.; Butcher, K.S.A.

    1991-11-01

    Surface barrier radiation detector made from high purity liquid phase epitaxial gallium arsenide wafers have been operated as X- and γ-ray detectors at various operating temperatures. Low energy isotopes are resolved including 241 Am at 40 deg C. and the higher gamma energies of 235 U at -80 deg C. 15 refs., 1 tab., 6 figs

  14. Electrical properties of indium arsenide irradiated with fast neutrons

    International Nuclear Information System (INIS)

    Kolin, N.G.; Osvenskii, V.B.; Rytova, N.S.; Yurova, E.S.

    1987-01-01

    A study was made of the influence of irradiation with fast reactor neutrons on electrical properties of indium arsenide samples with different dopant concentrations. The laws governing the formation and annealing of radiation defects in indium arsenide were found to be governed by the donor-acceptor interaction. Depending on the density of free carriers in the original crystal, irradiation could produce charged defects of predominantly donor or acceptor types. Donor defects in irradiated InAs samples were annealed practically completely, whereas a considerable fraction of residual acceptor defects was retained even after heat treatment at 900 degree C. The concentration of these residual acceptors depended on the electron density at the annealing temperature

  15. Assessment of arsenic exposures and controls in gallium arsenide production.

    Science.gov (United States)

    Sheehy, J W; Jones, J H

    1993-02-01

    The electronics industry is expanding the use of gallium arsenide in the production of optoelectronic devices and integrated circuits. Workers in the electronics industry using gallium arsenide are exposed to hazardous substances such as arsenic, arsine, and various acids. Arsenic requires stringent controls to minimize exposures (the current OSHA PEL for arsenic is 10 micrograms/m3 and the NIOSH REL is 2 micrograms/m3 ceiling). Inorganic arsenic is strongly implicated in respiratory tract and skin cancer. For these reasons, NIOSH researchers conducted a study of control systems for facilities using gallium arsenide. Seven walk-through surveys were performed to identify locations for detailed study which appeared to have effective controls; three facilities were chosen for in-depth evaluation. The controls were evaluated by industrial hygiene sampling. Including personal breathing zone and area air sampling for arsenic and arsine; wipe samples for arsenic also were collected. Work practices and the use of personal protective equipment were documented. This paper reports on the controls and the arsenic exposure results from the evaluation of the following gallium arsenide processes: Liquid Encapsulated Czochralski (LEC) and Horizontal Bridgeman (HB) crystal growing, LEC cleaning operations, ingot grinding/wafer sawing, and epitaxy. Results at one plant showed that in all processes except epitaxy, average arsenic exposures were at or above the OSHA action level of 5 micrograms/m3. While cleaning the LEC crystal pullers, the average potential arsenic exposure of the cleaning operators was 100 times the OSHA PEL. At the other two plants, personal exposures for arsenic were well controlled in LEC, LEC cleaning, grinding/sawing, and epitaxy operations.

  16. Study of current instabilities in high resistivity gallium arsenide

    International Nuclear Information System (INIS)

    Barraud, A.

    1968-01-01

    We have shown the existence and made a study of the current oscillations produced in high-resistivity gallium arsenide by a strong electric field. The oscillations are associated with the slow travelling of a region of high electrical field across the whole sample. An experimental study of the properties of these instabilities has made it possible for us to distinguish this phenomenon from the Gunn effect, from acoustic-electric effects and from contact effects. In order to account for this type of instability, a differential trapping mechanism involving repulsive impurities is proposed; this mechanism can reduce the concentration of charge carriers in the conduction band at strong electrical fields and can lead to the production of a high-field domain. By developing this model qualitatively we have been able to account for all the properties of high-resistance gallium arsenide crystals subjected to a strong electrical field: increase of the Hall constant, existence of a voltage threshold for these oscillations, production of domains of high field, low rate of propagation of these domains, and finally the possibility of inverting the direction of the propagation of the domain without destroying the latter. A quantitative development of the model makes it possible to calculate the various characteristic parameters of these instabilities. Comparison with experiment shows that there is a good agreement, the small deviations coming especially from the lack of knowledge concerning transport properties in gallium arsenide subjected to high fields. From a study of this model, it appears that the instability phenomenon can occur over a wide range of repulsive centre concentrations, and also for a large range of resistivities. This is the reason why it appears systematically in gallium arsenide of medium and high resistivity. (authors) [fr

  17. Testing of gallium arsenide solar cells on the CRRES vehicle

    International Nuclear Information System (INIS)

    Trumble, T.M.

    1985-01-01

    A flight experiment was designed to determine the optimum design for gallium arsenide (GaAs) solar cell panels in a radiation environment. Elements of the experiment design include, different coverglass material and thicknesses, welded and soldered interconnects, different solar cell efficiencies, different solar cell types, and measurement of annealing properties. This experiment is scheduled to fly on the Combined Release and Radiation Effects Satellite (CRRES). This satellite will simultaneously measure the radiation environment and provide engineering data on solar cell degradation that can be directly related to radiation damage

  18. Photo-dissociation of hydrogen passivated dopants in gallium arsenide

    International Nuclear Information System (INIS)

    Tong, L.; Larsson, J.A.; Nolan, M.; Murtagh, M.; Greer, J.C.; Barbe, M.; Bailly, F.; Chevallier, J.; Silvestre, F.S.; Loridant-Bernard, D.; Constant, E.; Constant, F.M.

    2002-01-01

    A theoretical and experimental study of the photo-dissociation mechanisms of hydrogen passivated n- and p-type dopants in gallium arsenide is presented. The photo-induced dissociation of the Si Ga -H complex has been observed for relatively low photon energies (3.48 eV), whereas the photo-dissociation of C As -H is not observed for photon energies up to 5.58 eV. This fundamental difference in the photo-dissociation behavior between the two dopants is explained in terms of the localized excitation energies about the Si-H and C-H bonds

  19. Liquid phase epitaxy of gallium arsenide - a review

    International Nuclear Information System (INIS)

    Alexiev, D.; Edmondson, M.; Butcher, K.S.A.; Tansley, T.

    1992-07-01

    Liquid phase epitaxy of gallium arsenide has been investigated intensively from the late 1960's to the present and has now a special place in the manufacture of wide band, compound semiconductor radiation detectors. Although this particular process appears to have gained prominence in the last three decades, the authors point out that its origins reach back to 1836 when Frankenheim made his first observations. A brief review is presented from a semiconductor applications point of view on how this subject developed. 70 refs., 5 figs

  20. Anomalous tensoelectric effects in gallium arsenide tunnel diodes

    Energy Technology Data Exchange (ETDEWEB)

    Alekseeva, Z.M.; Vyatkin, A.P.; Krivorotov, N.P.; Shchegol' , A.A.

    1988-02-01

    Anomalous tensoelectric phenomena induced in a tunnel p-n junction by a concentrated load and by hydrostatic compression were studied. The anomalous tensoelectric effects are caused by the action of concentrators of mechanical stresses in the vicinity of the p-n junction, giving rise to local microplastic strain. Under the conditions of hydrostatic compression prolate inclusions approx.100-200 A long play the role of concentrators. Analysis of irreversible changes in the current-voltage characteristics of tunnel p-n junctions made it possible to separate the energy levels of the defects produced with plastic strain of gallium arsenide.

  1. Lattice parameters guide superconductivity in iron-arsenides

    Science.gov (United States)

    Konzen, Lance M. N.; Sefat, Athena S.

    2017-03-01

    The discovery of superconducting materials has led to their use in technological marvels such as magnetic-field sensors in MRI machines, powerful research magnets, short transmission cables, and high-speed trains. Despite such applications, the uses of superconductors are not widespread because they function much below room-temperature, hence the costly cooling. Since the discovery of Cu- and Fe-based high-temperature superconductors (HTS), much intense effort has tried to explain and understand the superconducting phenomenon. While no exact explanations are given, several trends are reported in relation to the materials basis in magnetism and spin excitations. In fact, most HTS have antiferromagnetic undoped ‘parent’ materials that undergo a superconducting transition upon small chemical substitutions in them. As it is currently unclear which ‘dopants’ can favor superconductivity, this manuscript investigates crystal structure changes upon chemical substitutions, to find clues in lattice parameters for the superconducting occurrence. We review the chemical substitution effects on the crystal lattice of iron-arsenide-based crystals (2008 to present). We note that (a) HTS compounds have nearly tetragonal structures with a-lattice parameter close to 4 Å, and (b) superconductivity can depend strongly on the c-lattice parameter changes with chemical substitution. For example, a decrease in c-lattice parameter is required to induce ‘in-plane’ superconductivity. The review of lattice parameter trends in iron-arsenides presented here should guide synthesis of new materials and provoke theoretical input, giving clues for HTS.

  2. Macroscopic diffusion models for precipitation in crystalline gallium arsenide

    Energy Technology Data Exchange (ETDEWEB)

    Kimmerle, Sven-Joachim Wolfgang

    2009-09-21

    Based on a thermodynamically consistent model for precipitation in gallium arsenide crystals including surface tension and bulk stresses by Dreyer and Duderstadt, we propose two different mathematical models to describe the size evolution of liquid droplets in a crystalline solid. The first model treats the diffusion-controlled regime of interface motion, while the second model is concerned with the interface-controlled regime of interface motion. Our models take care of conservation of mass and substance. These models generalise the well-known Mullins- Sekerka model for Ostwald ripening. We concentrate on arsenic-rich liquid spherical droplets in a gallium arsenide crystal. Droplets can shrink or grow with time but the centres of droplets remain fixed. The liquid is assumed to be homogeneous in space. Due to different scales for typical distances between droplets and typical radii of liquid droplets we can derive formally so-called mean field models. For a model in the diffusion-controlled regime we prove this limit by homogenisation techniques under plausible assumptions. These mean field models generalise the Lifshitz-Slyozov-Wagner model, which can be derived from the Mullins-Sekerka model rigorously, and is well understood. Mean field models capture the main properties of our system and are well adapted for numerics and further analysis. We determine possible equilibria and discuss their stability. Numerical evidence suggests in which case which one of the two regimes might be appropriate to the experimental situation. (orig.)

  3. Magnetostrictive properties of polycrystalline iron cobalt films

    International Nuclear Information System (INIS)

    Cooke, M.D.

    2000-10-01

    This thesis is concerned with the magnetic properties of magnetostrictive FeCo polycrystalline alloy films produced by RF magnetron sputter deposition. The bulk material is known to have highly magnetostrictive properties, coupled with the possibility of a low anisotropy with the correct thermal treatment to allow ordering. Significant reduction in the anisotropy was found by using post depostional thermal treatment in Ar/H. It has been demonstrated that it is possible to produce FeCo films with magnetostrictive properties similar to those found in the bulk. Detailed examination showed an increased peak in the magnetostriction with composition which had not been previously viewed in the bulk materials. Initial development was also made of a novel co-depositional technique to allow magnetostrictive determination as a function of composition in a single deposition. Development was made of a technique using the Daresbury Synchrotron research facility and the XRD equipment to allow determination of the magnetostriction coefficients of polycrystalline films. This is the first time this has been achieved for thin film materials and provides exciting new possibilities for the future. A critique was made of the optical cantilever technique for determining magnetostriction. Clear consideration has to be made of rotational and frequency effects. A new analytical theory was devised which allowing determination of the cantilever deflection for similar substrate and film thickness. This is essential for development of current trends in nanotechnology. The results were then optimised for use in sensor and actuator devices providing novel results. Finally investigation was made of the possible effects of surfaces on the magnetic properties. The magnetostriction of FeCo/Ag multilayers and Ag embedded in an FeCo matrix are compared. These clearly show the influence of surface and illustrate the importance of considering the technique used to determine the magnetostriction. (author)

  4. Surface magnetism in iron, cobalt, and nickel

    DEFF Research Database (Denmark)

    Alde´n, M.; Mirbt, S.; Skriver, Hans Lomholt

    1992-01-01

    with experimental values to within 10%, which may be considered most satisfactory in view of the computational efficiency of the Green’s function technique. Exchange and correlation have been treated wihtin the local spin-density approximation and we have considered three different parametrizations of the original...... many-body data. We find that the calculated work functions depend as much on the choice of this parametrization as on the effect of spin polarization....

  5. Synchrotron white beam topographic studies of gallium arsenide crystals

    International Nuclear Information System (INIS)

    Wierzchowski, W.; Wieteska, K.; Graeff, W.

    1997-01-01

    A series of samples cut out from different types of gallium arsenide crystals with low dislocation density were studied by means of white beam synchrotron topography. The investigation was performed with transmission and black-reflection projection methods and transmission section method. Some of topographs in transmission geometry provided a very high sensitivity suitable for revealing small precipitates. The transmission section images significantly differed depending on the wavelength and absorption. In some cases a distinct Pendelloesung fringes and fine details of dislocation and precipitates images were observed. It was possible to reproduce the character of these images by means of numerical simulation based on integration of Takagi-Taupin equations. Due to more convenient choice of radiation, synchrotron back-reflection projection topography provided much better visibility of dislocations than analogous realized with conventional X-ray sources. (author)

  6. Density Functional Theory Study on Defect Feature of AsGaGaAs in Gallium Arsenide

    Directory of Open Access Journals (Sweden)

    Deming Ma

    2015-01-01

    Full Text Available We investigate the defect feature of AsGaGaAs defect in gallium arsenide clusters in detail by using first-principles calculations based on the density functional theory (DFT. Our calculations reveal that the lowest donor level of AsGaGaAs defect on the gallium arsenide crystal surface is 0.85 eV below the conduction band minimum, while the lowest donor level of the AsGaGaAs defect inside the gallium arsenide bulk is 0.83 eV below the bottom of the conduction band, consistent with gallium arsenide EL2 defect level of experimental value (Ec-0.82 eV. This suggests that AsGaGaAs defect is one of the possible gallium arsenide EL2 deep-level defects. Moreover, our results also indicate that the formation energies of internal AsGaGaAs and surface AsGaGaAs defects are predicted to be around 2.36 eV and 5.54 eV, respectively. This implies that formation of AsGaGaAs defect within the crystal is easier than that of surface. Our results offer assistance in discussing the structure of gallium arsenide deep-level defect and its effect on the material.

  7. Study of thermodynamic properties of binary and ternary liquid alloys of aluminium with the elements iron, cobalt, nickel and oxygen; Etude des proprietes thermodynamiques des alliages liquides binaires et ternaires de l'aluminium avec les elements fer, cobalt, nickel et l'oxygene

    Energy Technology Data Exchange (ETDEWEB)

    Vachet, F [CEA Vallee du Rhone, 26-Pierrelatte (France)

    1966-07-01

    The present work deals with the thermodynamic study of aluminium liquid alloys with the metals iron, cobalt and nickel. The experiments carried out lead to the activity, at 1600 deg C, of aluminium in the (Al, Fe), (Al, Co), (Al, Ni) liquid alloys. The experimental method used consists in studying the partition of aluminium between the liquid immiscible phases made up with the pairs of metals (Fe, Ag), (Co, Ag), (Ni, Ag). The informations so obtained are used for drawing the isothermal equilibrium phases diagrams sections of (Al, Fe, Ag), (Al, Co, Ag), (Al, Ni, Ag) systems. The study of the partition of silver between lead and aluminium joined with the determinations of several authors allows us to determine the aluminium activity, analytically presented, in the metal M (iron cobalt and nickel). The Wagner's interaction parameters of aluminium in metal M are determined. The results obtained as the equilibrium phases diagrams of (Al, M) systems allow to compare the thermodynamic properties of the Al Fe system in liquid and solid states and to estimate the enthalpies of melting of the AlCo and AlNi intermetallic compounds. The activity, at 1600 deg C, of aluminium in (Al, Fe, Co), (Al, Fe, Ni), (Al, Co, Ni) liquid alloys is estimated through thermodynamic properties of binary components systems by application of several methods leading to results in good agreement. The study of aluminium-oxygen interactions in the liquid metallic solvants M allows us to propose an explanation for the shape of the deoxidation equilibrium line of iron, cobalt and nickel by aluminium and to compare the de-oxidizing power of aluminium toward iron, cobalt and nickel oxides. (author) [French] Le travail presente se rapporte a l'etude thermodynamique des alliages liquides de l'aluminium avec les metaux fer, cobalt et nickel. Les experiences effectuees ont pour but de determiner l'activite, a 1600 C, de l'aluminium dans les alliages liquides (Al, Fe), (Al, Co), (Al, Ni). La methode

  8. Semiconducting icosahedral boron arsenide crystal growth for neutron detection

    Science.gov (United States)

    Whiteley, C. E.; Zhang, Y.; Gong, Y.; Bakalova, S.; Mayo, A.; Edgar, J. H.; Kuball, M.

    2011-03-01

    Semiconducting icosahedral boron arsenide, B12As2, is an excellent candidate for neutron detectors, thermoelectric converters, and radioisotope batteries, for which high quality single crystals are required. Thus, the present study was undertaken to grow B12As2 crystals by precipitation from metal solutions (nickel) saturated with elemental boron (or B12As2 powder) and arsenic in a sealed quartz ampoule. B12As2 crystals of 10-15 mm were produced when a homogeneous mixture of the three elements was held at 1150 °C for 48-72 h and slowly cooled (3.5 °C/h). The crystals varied in color and transparency from black and opaque to clear and transparent. X-ray topography (XRT), and elemental analysis by energy dispersive X-ray spectroscopy (EDS) confirmed that the crystals had the expected rhombohedral structure and chemical stoichiometry. The concentrations of residual impurities (nickel, carbon, etc.) were low, as measured by Raman spectroscopy and secondary ion mass spectrometry (SIMS). Additionally, low etch-pit densities (4.4×107 cm-2) were observed after etching in molten KOH at 500 °C. Thus, the flux growth method is viable for growing large, high-quality B12As2 crystals.

  9. Optical and Electrical Characterization of Melt-Grown Bulk Indium Gallium Arsenide and Indium Arsenic Phosphide Alloys

    Science.gov (United States)

    2011-03-01

    spectrum, photoluminescence (PL), and refractive index measurements. Other methods such as infrared imagery and micro probe wavelength dispersing ...States. AFIT/DS/ENP/11-M02 OPTICAL AND ELECTRICAL CHARACTERIZATION OF MELT- GROWN BULK INDIUM GALLIUM ARSENIDE AND INDIUM ARSENIC PHOSPHIDE ...CHARACTERIZATION OF MELT-GROWN BULK INDIUM GALLIUM ARSENIDE AND INDIUM ARSENIC PHOSPHIDE ALLOYS Jean Wei, BS, MS Approved

  10. The comparison between gallium arsenide and indium gallium arsenide as materials for solar cell performance using Silvaco application

    Energy Technology Data Exchange (ETDEWEB)

    Zahari, Suhaila Mohd; Norizan, Mohd Natashah; Mohamad, Ili Salwani; Osman, Rozana Aina Maulat; Taking, Sanna [School of Microelectronic Engineering, Universiti Malaysia Perlis, Kampus Pauh Putra, 02600 Arau, Perlis (Malaysia)

    2015-05-15

    The work presented in this paper is about the development of single and multilayer solar cells using GaAs and InGaAs in AM1.5 condition. The study includes the modeling structure and simulation of the device using Silvaco applications. The performance in term of efficiency of Indium Gallium Arsenide (InGaAs) and GaAs material was studied by modification of the doping concentration and thickness of material in solar cells. The efficiency of the GaAs solar cell was higher than InGaAs solar cell for single layer solar cell. Single layer GaAs achieved an efficiency about 25% compared to InGaAs which is only 2.65% of efficiency. For multilayer which includes both GaAs and InGaAs, the output power, P{sub max} was 8.91nW/cm² with the efficiency only 8.51%. GaAs is one of the best materials to be used in solar cell as a based compared to InGaAs.

  11. The comparison between gallium arsenide and indium gallium arsenide as materials for solar cell performance using Silvaco application

    Science.gov (United States)

    Zahari, Suhaila Mohd; Norizan, Mohd Natashah; Mohamad, Ili Salwani; Osman, Rozana Aina Maulat; Taking, Sanna

    2015-05-01

    The work presented in this paper is about the development of single and multilayer solar cells using GaAs and InGaAs in AM1.5 condition. The study includes the modeling structure and simulation of the device using Silvaco applications. The performance in term of efficiency of Indium Gallium Arsenide (InGaAs) and GaAs material was studied by modification of the doping concentration and thickness of material in solar cells. The efficiency of the GaAs solar cell was higher than InGaAs solar cell for single layer solar cell. Single layer GaAs achieved an efficiency about 25% compared to InGaAs which is only 2.65% of efficiency. For multilayer which includes both GaAs and InGaAs, the output power, Pmax was 8.91nW/cm² with the efficiency only 8.51%. GaAs is one of the best materials to be used in solar cell as a based compared to InGaAs.

  12. The comparison between gallium arsenide and indium gallium arsenide as materials for solar cell performance using Silvaco application

    International Nuclear Information System (INIS)

    Zahari, Suhaila Mohd; Norizan, Mohd Natashah; Mohamad, Ili Salwani; Osman, Rozana Aina Maulat; Taking, Sanna

    2015-01-01

    The work presented in this paper is about the development of single and multilayer solar cells using GaAs and InGaAs in AM1.5 condition. The study includes the modeling structure and simulation of the device using Silvaco applications. The performance in term of efficiency of Indium Gallium Arsenide (InGaAs) and GaAs material was studied by modification of the doping concentration and thickness of material in solar cells. The efficiency of the GaAs solar cell was higher than InGaAs solar cell for single layer solar cell. Single layer GaAs achieved an efficiency about 25% compared to InGaAs which is only 2.65% of efficiency. For multilayer which includes both GaAs and InGaAs, the output power, P max was 8.91nW/cm² with the efficiency only 8.51%. GaAs is one of the best materials to be used in solar cell as a based compared to InGaAs

  13. Properties of gallium arsenide alloyed with Ge and Se by irradiation in nuclear reactor thermal column

    International Nuclear Information System (INIS)

    Kolin, N.G.; Osvenskij, V.B.; Tokarevskij, V.V.; Kharchenko, V.A.; Ievlev, S.M.

    1985-01-01

    Dependences of electrophysical properties as well as lattice unit spacing and density of nuclear-alloyed gallium arsenide on the fluence of reactor neutrons and heat treatment are investigated. Neutron radiation of gallium arsenide with different energy spectra is shown to differently affect material properties. Fast neutrons make the main contribution to defect formation. Concentration of compensating acceptor defects formed under GaAs radiation in a thermal column practically equals concentration of introduced donor impurities. Radiation defects of acceptor type are not annealed in the material completely even at 900-1000 deg C

  14. Noble Metal Arsenides and Gold Inclusions in Northwest Africa 8186

    Science.gov (United States)

    Srinivasan, P.; McCubbin, F. M.; Rahman, Z.; Keller, L. P.; Agee, C. B.

    2016-01-01

    CK carbonaceous chondrites are a highly thermally altered group of carbonaceous chondrites, experiencing temperatures ranging between approximately 576-867 degrees Centigrade. Additionally, the mineralogy of the CK chondrites record the highest overall oxygen fugacity of all chondrites, above the fayalite-magnetite-quartz (FMQ) buffer. Me-tallic Fe-Ni is extremely rare in CK chondrites, but magnetite and Fe,Ni sulfides are commonly observed. Noble metal-rich inclusions have previously been found in some magnetite and sulfide grains. These arsenides, tellurides, and sulfides, which contain varying amounts of Pt, Ru, Os, Te, As, Ir, and S, are thought to form either by condensation from a solar gas, or by exsolution during metamorphism on the chondritic parent body. Northwest Africa (NWA) 8186 is a highly metamorphosed CK chondrite. This meteorite is predominately composed of NiO-rich forsteritic olivine (Fo65), with lesser amounts of plagioclase (An52), augite (Fs11Wo49), magnetite (with exsolved titanomagnetite, hercynite, and titanohematite), monosulfide solid solution (with exsolved pentlandite), and the phosphate minerals Cl-apatite and merrillite. This meteorite contains coarse-grained, homogeneous silicates, and has 120-degree triple junctions between mineral phases, which indicates a high degree of thermal metamorphism. The presence of NiO-rich olivine, oxides phases all bearing Fe3 plus, and the absence of metal, are consistent with an oxygen fugacity above the FMQ buffer. We also observed noble metal-rich phases within sulfide grains in NWA 8186, which are the primary focus of the present study.

  15. Noise suppression and long-range exchange coupling for gallium arsenide spin qubits

    DEFF Research Database (Denmark)

    Malinowski, Filip

    This thesis presents the results of the experimental study performed on spin qubits realized in gate-defined gallium arsenide quantum dots, with the focus on noise suppression and long-distance coupling. First, we show that the susceptibility to charge noise can be reduced by reducing the gradien...

  16. Continuum modelling of silicon diffusion in indium gallium arsenide

    Science.gov (United States)

    Aldridge, Henry Lee, Jr.

    A possible method to overcome the physical limitations experienced by continued transistor scaling and continue improvements in performance and power consumption is integration of III-V semiconductors as alternative channel materials for logic devices. Indium Gallium Arsenide (InGaAs) is such a material from the III-V semiconductor family, which exhibit superior electron mobilities and injection velocities than that of silicon. In order for InGaAs integration to be realized, contact resistances must be minimized through maximizing activation of dopants in this material. Additionally, redistribution of dopants during processing must be clearly understood and ultimately controlled at the nanometer-scale. In this work, the activation and diffusion behavior of silicon, a prominent n-type dopant in InGaAs, has been characterized and subsequently modelled using the Florida Object Oriented Process and Device Simulator (FLOOPS). In contrast to previous reports, silicon exhibits non-negligible diffusion in InGaAs, even for smaller thermal budget rapid thermal anneals (RTAs). Its diffusion is heavily concentration-dependent, with broadening "shoulder-like" profiles when doping levels exceed 1-3x1019cm -3, for both ion-implanted and Molecular Beam Epitaxy (MBE)-grown cases. Likewise a max net-activation value of ˜1.7x1019cm -3 is consistently reached with enough thermal processing, regardless of doping method. In line with experimental results and several ab-initio calculation results, rapid concentration-dependent diffusion of Si in InGaAs and the upper limits of its activation is believed to be governed by cation vacancies that serve as compensating defects in heavily n-type regions of InGaAs. These results are ultimately in line with an amphoteric defect model, where the activation limits of dopants are an intrinsic limitation of the material, rather than governed by individual dopant species or their methods of incorporation. As a result a Fermi level dependent point

  17. Gallium interstitial contributions to diffusion in gallium arsenide

    Science.gov (United States)

    Schick, Joseph T.; Morgan, Caroline G.

    2011-09-01

    encountered in fitting experimental results for heavily p-type, Ga-rich gallium arsenide by simply extending a model for gallium interstitial diffusion which has been used for less p-doped material.

  18. Point defects in gallium arsenide characterized by positron annihilation spectroscopy and deep level transient spectroscopy

    International Nuclear Information System (INIS)

    Mih, R.; Gronsky, R.; Sterne, P.A.

    1995-01-01

    Positron annihilation lifetime spectroscopy (PALS) is a unique technique for detection of vacancy related defects in both as-grown and irradiated materials. The authors present a systematic study of vacancy defects in stoichiometrically controlled p-type Gallium Arsenide grown by the Hot-Wall Czochralski method. Microstructural information based on PALS, was correlated to crystallographic data and electrical measurements. Vacancies were detected and compared to electrical levels detected by deep level transient spectroscopy and stoichiometry based on crystallographic data

  19. Two years of on-orbit gallium arsenide performance from the LIPS solar cell panel experiment

    Science.gov (United States)

    Francis, R. W.; Betz, F. E.

    1985-01-01

    The LIPS on-orbit performance of the gallium arsenide panel experiment was analyzed from flight operation telemetry data. Algorithms were developed to calculate the daily maximum power and associated solar array parameters by two independent methods. The first technique utilizes a least mean square polynomial fit to the power curve obtained with intensity and temperature corrected currents and voltages; whereas, the second incorporates an empirical expression for fill factor based on an open circuit voltage and the calculated series resistance. Maximum power, fill factor, open circuit voltage, short circuit current and series resistance of the solar cell array are examined as a function of flight time. Trends are analyzed with respect to possible mechanisms which may affect successive periods of output power during 2 years of flight operation. Degradation factors responsible for the on-orbit performance characteristics of gallium arsenide are discussed in relation to the calculated solar cell parameters. Performance trends and the potential degradation mechanisms are correlated with existing laboratory and flight data on both gallium arsenide and silicon solar cells for similar environments.

  20. Effect of barrier height on friction behavior of the semiconductors silicon and gallium arsenide in contact with pure metals

    Science.gov (United States)

    Mishina, H.; Buckley, D. H.

    1984-01-01

    Friction experiments were conducted for the semiconductors silicon and gallium arsenide in contact with pure metals. Polycrystalline titanium, tantalum, nickel, palladium, and platinum were made to contact a single crystal silicon (111) surface. Indium, nickel, copper, and silver were made to contact a single crystal gallium arsenide (100) surface. Sliding was conducted both in room air and in a vacuum of 10 to the minus 9th power torr. The friction of semiconductors in contact with metals depended on a Schottky barrier height formed at the metal semiconductor interface. Metals with a higher barrier height on semiconductors gave lower friction. The effect of the barrier height on friction behavior for argon sputtered cleaned surfaces in vacuum was more specific than that for the surfaces containing films in room air. With a silicon surface sliding on titanium, many silicon particles back transferred. In contrast, a large quantity of indium transferred to the gallium arsenide surface.

  1. Significantly enhanced thermal conductivity of indium arsenide nanowires via sulfur passivation.

    Science.gov (United States)

    Xiong, Yucheng; Tang, Hao; Wang, Xiaomeng; Zhao, Yang; Fu, Qiang; Yang, Juekuan; Xu, Dongyan

    2017-10-16

    In this work, we experimentally investigated the effect of sulfur passivation on thermal transport in indium arsenide (InAs) nanowires. Our measurement results show that thermal conductivity can be enhanced by a ratio up to 159% by sulfur passivation. Current-voltage (I-V) measurements were performed on both unpassivated and S-passivated InAs nanowires to understand the mechanism of thermal conductivity enhancement. We observed a remarkable improvement in electrical conductivity upon sulfur passivation and a significant contribution of electrons to thermal conductivity, which account for the enhanced thermal conductivity of the S-passivated InAs nanowires.

  2. Detection of spin-states in Mn-doped gallium arsenide films

    International Nuclear Information System (INIS)

    Hofer, Werner A; Palotas, Krisztian; Teobaldi, Gilberto; Sadowski, Janusz; Mikkelsen, Anders; Lundgren, Edvin

    2007-01-01

    We show that isolated magnetic dipoles centred at the position of manganese impurities in a gallium arsenide lattice lead to spin polarized states in the bandgap of the III-V semiconductor. Spectroscopy simulations with a tungsten tip agree well with experimental data; in this case, no difference can be observed for the two magnetic groundstates. But if the signal is read with a magnetic iron tip, it changes by a factor of up to 20, depending on the magnetic orientation of the Mn atom

  3. Growth of Gold-assisted Gallium Arsenide Nanowires on Silicon Substrates via Molecular Beam Epitaxy

    Directory of Open Access Journals (Sweden)

    Ramon M. delos Santos

    2008-06-01

    Full Text Available Gallium arsenide nanowires were grown on silicon (100 substrates by what is called the vapor-liquid-solid (VLS growth mechanism using a molecular beam epitaxy (MBE system. Good quality nanowires with surface density of approximately 108 nanowires per square centimeter were produced by utilizing gold nanoparticles, with density of 1011 nanoparticles per square centimeter, as catalysts for nanowire growth. X-ray diffraction measurements, scanning electron microscopy, transmission electron microscopy and Raman spectroscopy revealed that the nanowires are epitaxially grown on the silicon substrates, are oriented along the [111] direction and have cubic zincblende structure.

  4. Pulsed electron-beam annealing of selenium-implanted gallium arsenide

    International Nuclear Information System (INIS)

    Inada, T.; Tokunaga, K.; Taka, S.

    1979-01-01

    Electrical properties of selenium-implanted gallium arsenide annealed by a single shot of high-power pulsed electron beams have been investigated by differential Hall-effect and sheet-resistivity measurements. It has been shown that higher electrical activation of implanted selenium can be obtained after electron-beam annealing at an incident energy density of 1.2 J/cm 2 , independent of heating of GaAs substrate during implantation. Measured carrier concentrations exhibit uniformly distributed profiles having carrier concentrations of 2--3 x 10 19 /cm 3 , which is difficult to realize by conventional thermal annealing

  5. THE QUANTUM-WELL STRUCTURES OF SELF ELECTROOPTIC-EFFECT DEVICES AND GALLIUM-ARSENIDE

    Directory of Open Access Journals (Sweden)

    Mustafa TEMİZ

    1996-02-01

    Full Text Available Multiple quantum-well (MQW electroabsorptive self electro optic-effect devices (SEEDs are being extensively studied for use in optical switching and computing. The self electro-optic-effect devices which has quantum-well structures is a new optoelectronic technology with capability to obtain both optical inputs and outputs for Gallium-Arsenide/Aluminum Gallium-Arsenide (GaAs/AlGaAs electronic circuits. The optical inputs and outputs are based on quantum-well absorptive properties. These quantum-well structures consist of many thin layers of semiconductors materials of GaAs/AlGaAs which have emerged some important directions recently. The most important advance in the physics of these materials since the early days has been invention of the heterojunction structures which is based at present on GaAs technology. GaAs/AlGaAs structures present some important advantages to relevant band gap and index of refraction which allow to form the quantum-well structures and also to make semiconductor lasers, dedectors and waveguide optical switches.

  6. Structural and electrooptical characteristics of quantum dots emitting at 1.3 μm on gallium arsenide

    DEFF Research Database (Denmark)

    Fiore, A.; Oesterle, U.; Stanley, R.P.

    2001-01-01

    We present a comprehensive study of the structural and emission properties of self-assembled InAs quantum dots emitting at 1.3 mum. The dots are grown by molecular beam epitaxy on gallium arsenide substrates. Room-temperature emission at 1.3 mum is obtained by embedding the dots in an InGaAs layer...

  7. Moessbauer study of iron-cobalt-rhodium spinels

    Energy Technology Data Exchange (ETDEWEB)

    Spencer, C D; Smith, P A; Karnes, C M; Shepard, W A [Ithaca Coll., NY (USA). Dept. of Physics

    1980-01-01

    Moessbauer source and absorber studies have been carried out on the spinel system CoFesub(x)Rhsub(2-x)O/sub 4/ for x 0.005, 0.3, 0.5, 1.0, 1.2 and 1.5. For 0.005 =< x =< 1.2, the cation distribution is normal with Co/sup 2 +/ on A sites. At x = 1.5, the distribution is nearly inverse. In the cases x = 0.005 and 0.3, iron on the B sites does not produce a quadrupole doublet indicating that the B sites are cubic which is contrary to the usual case in spinels.

  8. Distribution of iron, cobalt , zinc and selenium in macrofungi

    Czech Academy of Sciences Publication Activity Database

    Borovička, Jan; Řanda, Zdeněk

    2007-01-01

    Roč. 6, č. 4 (2007), s. 249-259 ISSN 1617-416X Institutional research plan: CEZ:AV0Z10480505 Keywords : ectomycorrhizal fungi * instrumental neutron activation analysis * terrestrial saprobes Subject RIV: CH - Nuclear ; Quantum Chemistry Impact factor: 1.259, year: 2007

  9. Creep deformation of a soft magnetic iron-cobalt alloy

    OpenAIRE

    Fingers, Richard T.; Coate, Jack E.; Dowling, Norman E.

    1999-01-01

    The U.S. Air Force is in the process of developing magnetic bearings, as well as an aircraft integrated power unit and an internal starter/generator for main propulsion engines. These developments are the driving force for the new emphasis on the development of high saturation, low loss magnets capable of maintaining structural integrity in high stress and high temperature environments. It is this combination of desired material characteristics that is the motivation of this effort to measure...

  10. Nanocrystalline Iron-Cobalt Alloys for High Saturation Indutance

    Science.gov (United States)

    2016-02-24

    film deposited just like the pick-up of a turn-table music player. The contact pads provide the electrical contacts to the starting and end point of...anisotropy using the geometry of the thin toroid. We have shown experimentally that the thin film toroid calculations may be applicable to up to millimeter...thin film as well as bulk devices. 15. SUBJECT TERMS Micromagnetic Calculations, Nanocrystalline cobalt-iron, Thin Film Toroids 16. SECURITY

  11. Damage structure of gallium arsenide irradiated in a high-voltage electron microscope

    International Nuclear Information System (INIS)

    Loretto, D.; Loretto, M.H.

    1989-01-01

    Semi-insulating undoped gallium arsenide has been irradiated in a high-voltage electron microscope between room temperature and about 500 0 C for doses of up to 5 x 10 22 electrons cm -2 at 1 MeV. Room-temperature irradiation produces small (less than 5 nm) damage clusters. As the temperature of the irradiation is increased, the size of these clusters increases, until at about 300 0 C a high density of dislocation loops can be resolved. The dislocation loops, 20 nm or less in diameter, which are produced at about 500 0 C have been analysed in a bright field using a two-beam inside-outside method which minimises the tilt necessary between micrographs. It is concluded that the loops are an interstitial perfect-edge type with a Burgers vector of (a/2) . (author)

  12. Quantum oscillations in the parent magnetic phase of an iron arsenide high temperature superconductor

    International Nuclear Information System (INIS)

    Sebastian, Suchitra E; Gillett, J; Lau, P H C; Lonzarich, G G; Harrison, N; Mielke, C H; Singh, D J

    2008-01-01

    We report measurements of quantum oscillations in SrFe 2 As 2 -which is an antiferromagnetic parent of the iron arsenide family of superconductors-known to become superconducting under doping and the application of pressure. The magnetic field and temperature dependences of the oscillations between 20 and 55 T in the liquid helium temperature range suggest that the electronic excitations are those of a Fermi liquid. We show that the observed Fermi surface comprising small pockets is consistent with the formation of a spin-density wave. Our measurements thus demonstrate that high T c superconductivity can occur on doping or pressurizing a conventional metallic spin-density wave state. (fast track communication)

  13. Advances in gallium arsenide monolithic microwave integrated-circuit technology for space communications systems

    Science.gov (United States)

    Bhasin, K. B.; Connolly, D. J.

    1986-01-01

    Future communications satellites are likely to use gallium arsenide (GaAs) monolithic microwave integrated-circuit (MMIC) technology in most, if not all, communications payload subsystems. Multiple-scanning-beam antenna systems are expected to use GaAs MMIC's to increase functional capability, to reduce volume, weight, and cost, and to greatly improve system reliability. RF and IF matrix switch technology based on GaAs MMIC's is also being developed for these reasons. MMIC technology, including gigabit-rate GaAs digital integrated circuits, offers substantial advantages in power consumption and weight over silicon technologies for high-throughput, on-board baseband processor systems. In this paper, current developments in GaAs MMIC technology are described, and the status and prospects of the technology are assessed.

  14. Ultrafast photocurrents and terahertz radiation in gallium arsenide and carbon based nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Prechtel, Hans Leonhard

    2011-08-15

    In this thesis we developed a measurement technique based on a common pump-probe scheme and coplanar stripline circuits that enables time-resolved photocurrent measurements of contacted nanosystems with a micrometer spatial and a picosecond time resolution. The measurement technique was applied to lowtemperature grown gallium arsenide (LT-GaAs), carbon nanotubes (CNTs), graphene, and p-doped gallium arsenide (GaAs) nanowires. The various mechanisms responsible for the generation of current pulses by pulsed laser excitation were reviewed. Furthermore the propagation of the resulting electromagnetic radiation along a coplanar stripline circuit was theoretically and numerically treated. The ultrafast photocurrent response of low-temperature grown GaAs was investigated. We found two photocurrent pulses in the time-resolved response. We showed that the first pulse is consistent with a displacement current pulse. We interpreted the second pulse to result from a transport current process. We further determined the velocity of the photo-generated charge carriers to exceed the drift, thermal and quantum velocities of single charge carriers. Hereby, we interpreted the transport current pulse to stem from an electron-hole plasma excitation. We demonstrated that the photocurrent response of CNTs comprises an ultrafast displacement current and a transport current. The data suggested that the photocurrent is finally terminated by the recombination lifetime of the charge carriers. To the best of our knowledge, we presented in this thesis the first recombination lifetime measurements of contacted, suspended, CVD grown CNT networks. In addition, we studied the ultrafast photocurrent dynamics of freely suspended graphene contacted by metal electrodes. At the graphene-metal interface, we demonstrated that built-in electric fields give rise to a photocurrent with a full-width-half-maximum of a few picoseconds and that a photo-thermoelectric effect generates a current with a decay time

  15. Direct observation of the orbital spin Kondo effect in gallium arsenide quantum dots

    Science.gov (United States)

    Shang, Ru-Nan; Zhang, Ting; Cao, Gang; Li, Hai-Ou; Xiao, Ming; Guo, Guang-Can; Guo, Guo-Ping

    2018-02-01

    Besides the spin Kondo effect, other degrees of freedom can give rise to the pseudospin Kondo effect. We report a direct observation of the orbital spin Kondo effect in a series-coupled gallium arsenide (GaAs) double quantum dot device where orbital degrees act as pseudospin. Electron occupation in both dots induces a pseudospin Kondo effect. In a region of one net spin impurity, complete spectra with three resonance peaks are observed. Furthermore, we observe a pseudo-Zeeman effect and demonstrate its electrical controllability for the artificial pseudospin in this orbital spin Kondo process via gate voltage control. The fourfold degeneracy point is realized at a specific value supplemented by spin degeneracy, indicating a transition from the SU(2) to the SU(4) Kondo effect.

  16. Self-cleaning and surface chemical reactions during hafnium dioxide atomic layer deposition on indium arsenide.

    Science.gov (United States)

    Timm, Rainer; Head, Ashley R; Yngman, Sofie; Knutsson, Johan V; Hjort, Martin; McKibbin, Sarah R; Troian, Andrea; Persson, Olof; Urpelainen, Samuli; Knudsen, Jan; Schnadt, Joachim; Mikkelsen, Anders

    2018-04-12

    Atomic layer deposition (ALD) enables the ultrathin high-quality oxide layers that are central to all modern metal-oxide-semiconductor circuits. Crucial to achieving superior device performance are the chemical reactions during the first deposition cycle, which could ultimately result in atomic-scale perfection of the semiconductor-oxide interface. Here, we directly observe the chemical reactions at the surface during the first cycle of hafnium dioxide deposition on indium arsenide under realistic synthesis conditions using photoelectron spectroscopy. We find that the widely used ligand exchange model of the ALD process for the removal of native oxide on the semiconductor and the simultaneous formation of the first hafnium dioxide layer must be significantly revised. Our study provides substantial evidence that the efficiency of the self-cleaning process and the quality of the resulting semiconductor-oxide interface can be controlled by the molecular adsorption process of the ALD precursors, rather than the subsequent oxide formation.

  17. Precision calibration of the silicon doping level in gallium arsenide epitaxial layers

    Science.gov (United States)

    Mokhov, D. V.; Berezovskaya, T. N.; Kuzmenkov, A. G.; Maleev, N. A.; Timoshnev, S. N.; Ustinov, V. M.

    2017-10-01

    An approach to precision calibration of the silicon doping level in gallium arsenide epitaxial layers is discussed that is based on studying the dependence of the carrier density in the test GaAs layer on the silicon- source temperature using the Hall-effect and CV profiling techniques. The parameters are measured by standard or certified measuring techniques and approved measuring instruments. It is demonstrated that the use of CV profiling for controlling the carrier density in the test GaAs layer at the thorough optimization of the measuring procedure ensures the highest accuracy and reliability of doping level calibration in the epitaxial layers with a relative error of no larger than 2.5%.

  18. Site preference of rare earth doping in palladium-iron-arsenide superconductors

    Energy Technology Data Exchange (ETDEWEB)

    Stuerzer, Christine; Schulz, Anne; Johrendt, Dirk [Department Chemie, Ludwig-Maximilians-Universitaet Muenchen (Germany)

    2014-12-15

    The solid solutions (Ca{sub 1-y}RE{sub y}Fe{sub 1-x}Pd{sub x}As){sub 10}Pd{sub z}As{sub 8} with RE = La, Ce, and Pr were synthesized by solid state methods and characterized by X-ray powder diffraction with subsequent Rietveld refinements [(CaFeAs){sub 10}Pt{sub 3}As{sub 8}-type structure (''1038 type''), P anti 1, Z = 1]. Substitution levels (Ca/RE, Fe/Pd, and Pd/□) obtained from Rietveld refinements coincide well with the nominal values according to EDS and the linear courses of the lattice parameters as expected from the ionic radii. The RE atoms favor the one out of five calcium sites, which is eightfold coordinated by arsenic. This leads to significant stabilization of the structure, and especially prevents palladium over-doping in the iron-arsenide layers as observed in the pristine compound (CaFe{sub 1-x}Pd{sub x}As){sub 10}Pd{sub z}As{sub 8}. While the stabilization energy is estimated to about 40 kJ.mol{sup -1} by electronic structure calculations, the reason for the diminished Fe/Pd substitution through RE doping is still not yet understood. We suggest that the electrons transferred from RE{sup 3+} to the (Fe{sub 1-x}Pd{sub x})As layer makes higher palladium concentrations unfavorable. Anyway the reduced palladium doping enables superconductivity with critical temperatures up to 20 K (onset) in the RE doped Pd1038 samples, which could not be obtained earlier due to palladium over-doping in the active iron-arsenide layers. (Copyright copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  19. In-plane electronic anisotropy of underdoped '122' Fe-arsenide superconductors revealed by measurements of detwinned single crystals

    International Nuclear Information System (INIS)

    Fisher, I R; Shen, Z X; Degiorgi, L

    2011-01-01

    The parent phases of the Fe-arsenide superconductors harbor an antiferromagnetic ground state. Significantly, the Neel transition is either preceded or accompanied by a structural transition that breaks the four-fold symmetry of the high-temperature lattice. Borrowing language from the field of soft condensed matter physics, this broken discrete rotational symmetry is widely referred to as an Ising nematic phase transition. Understanding the origin of this effect is a key component of a complete theoretical description of the occurrence of superconductivity in this family of compounds, motivating both theoretical and experimental investigation of the nematic transition and the associated in-plane anisotropy. Here we review recent experimental progress in determining the intrinsic in-plane electronic anisotropy as revealed by resistivity, reflectivity and angle-resolved photoemission spectroscopy measurements of detwinned single crystals of underdoped Fe-arsenide superconductors in the '122' family of compounds.

  20. In-Plane Electronic Anisotropy of Underdoped ___122___ Fe-Arsenide Superconductors Revealed by Measurements of Detwinned Single Crystals

    Energy Technology Data Exchange (ETDEWEB)

    Fisher, Ian Randal

    2012-05-08

    The parent phases of the Fe-arsenide superconductors harbor an antiferromagnetic ground state. Significantly, the Neel transition is either preceded or accompanied by a structural transition that breaks the four fold symmetry of the high-temperature lattice. Borrowing language from the field of soft condensed matter physics, this broken discrete rotational symmetry is widely referred to as an Ising nematic phase transition. Understanding the origin of this effect is a key component of a complete theoretical description of the occurrence of superconductivity in this family of compounds, motivating both theoretical and experimental investigation of the nematic transition and the associated in-plane anisotropy. Here we review recent experimental progress in determining the intrinsic in-plane electronic anisotropy as revealed by resistivity, reflectivity and ARPES measurements of detwinned single crystals of underdoped Fe arsenide superconductors in the '122' family of compounds.

  1. Thermo-chemical properties and electrical resistivity of Zr-based arsenide chalcogenides

    Directory of Open Access Journals (Sweden)

    A. Schlechte, R. Niewa, M. Schmidt, G. Auffermann, Yu. Prots, W. Schnelle, D. Gnida, T. Cichorek, F. Steglich and R. Kniep

    2007-01-01

    Full Text Available Ternary phases in the systems Zr–As–Se and Zr–As–Te were studied using single crystals of ZrAs1.40(1Se0.50(1 and ZrAs1.60(2Te0.40(1 (PbFCl-type of structure, space group P4/nmm as well as ZrAs0.70(1Se1.30(1 and ZrAs0.75(1Te1.25(1 (NbPS-type of structure, space group Immm. The characterization covers chemical compositions, crystal structures, homogeneity ranges and electrical resistivities. At 1223 K, the Te-containing phases can be described with the general formula ZrAsxTe2−x, with 1.53(1≤x≤1.65(1 (As-rich and 0.58(1≤x≤0.75(1 (Te-rich. Both phases are located directly on the tie-line between ZrAs2 and ZrTe2, with no indication for any deviation. Similar is true for the Se-rich phase ZrAsxSe2−x with 0.70(1≤x≤0.75(1. However, the compositional range of the respective As-rich phase ZrAsx−ySe2−x (0.03(1≤y≤0.10(1; 1.42(1≤x≤1.70(1 is not located on the tie-line ZrAs2–ZrSe2, and exhibits a triangular region of existence with intrinsic deviation of the composition towards lower non-metal contents. Except for ZrAs0.75Se1.25, from the homogeneity range of the Se-rich phase, all compounds under investigation show metallic characteristics of electrical resistivity at temperatures >20 K. Related uranium and thorium arsenide selenides display a typical magnetic field-independent rise of the resistivity towards lower temperatures, which has been explained by a non-magnetic Kondo effect. However, a similar observation has been made for ZrAs1.40Se0.50, which, among the Zr-based arsenide chalcogenides, is the only system with a large concentration of intrinsic defects in the anionic substructure.

  2. Thermal and thermoelectric transport measurements of an individual boron arsenide microstructure

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Jaehyun; Sellan, Daniel P.; Ou, Eric; Shi, Li, E-mail: lishi@mail.utexas.edu [Department of Mechanical Engineering, The University of Texas at Austin, Austin, Texas 78712 (United States); Evans, Daniel A.; Williams, Owen M.; Cowley, Alan H. [Department of Chemistry, The University of Texas at Austin, Austin, Texas 78712 (United States)

    2016-05-16

    Recent first principles calculations have predicted that boron arsenide (BAs) can possess an unexpectedly high thermal conductivity that depends sensitively on the crystal size and defect concentration. However, few experimental results have been obtained to verify these predictions. In the present work, we report four-probe thermal and thermoelectric transport measurements of an individual BAs microstructure that was synthesized via a vapor transport method. The measured thermal conductivity was found to decrease slightly with temperature in the range between 250 K and 350 K. The temperature dependence suggests that the extrinsic phonon scattering processes play an important role in addition to intrinsic phonon-phonon scattering. The room temperature value of (186 ± 46) W m{sup −1 }K{sup −1} is higher than that of bulk silicon but still a factor of four lower than the calculated result for a defect-free, non-degenerate BAs rod with a similar diameter of 1.15 μm. The measured p-type Seebeck coefficient and thermoelectric power factor are comparable to those of bismuth telluride, which is a commonly used thermoelectric material. The foregoing results also suggest that it is necessary to not only reduce defect and boundary scatterings but also to better understand and control the electron scattering of phonons in order to achieve the predicted ultrahigh intrinsic lattice thermal conductivity of BAs.

  3. Model for transport and reaction of defects and carriers within displacement cascades in gallium arsenide

    International Nuclear Information System (INIS)

    Wampler, William R.; Myers, Samuel M.

    2015-01-01

    A model is presented for recombination of charge carriers at evolving displacement damage in gallium arsenide, which includes clustering of the defects in atomic displacement cascades produced by neutron or ion irradiation. The carrier recombination model is based on an atomistic description of capture and emission of carriers by the defects with time evolution resulting from the migration and reaction of the defects. The physics and equations on which the model is based are presented, along with the details of the numerical methods used for their solution. The model uses a continuum description of diffusion, field-drift and reaction of carriers, and defects within a representative spherically symmetric cluster of defects. The initial radial defect profiles within the cluster were determined through pair-correlation-function analysis of the spatial distribution of defects obtained from the binary-collision code MARLOWE, using recoil energies for fission neutrons. Properties of the defects are discussed and values for their parameters are given, many of which were obtained from density functional theory. The model provides a basis for predicting the transient response of III-V heterojunction bipolar transistors to displacement damage from energetic particle irradiation

  4. Arsenic moiety in gallium arsenide is responsible for neuronal apoptosis and behavioral alterations in rats

    International Nuclear Information System (INIS)

    Flora, Swaran J.S.; Bhatt, Kapil; Mehta, Ashish

    2009-01-01

    Gallium arsenide (GaAs), an intermetallic semiconductor finds widespread applications in high frequency microwave and millimeter wave, and ultra fast supercomputers. Extensive use of GaAs has led to increased exposure to humans working in semiconductor industry. GaAs has the ability to dissociate into its constitutive moieties at physiological pH and might be responsible for the oxidative stress. The present study was aimed at evaluating, the principle moiety (Ga or As) in GaAs to cause neurological dysfunction based on its ability to cause apoptosis, in vivo and in vitro and if this neuronal dysfunction translated to neurobehavioral changes in chronically exposed rats. Result indicated that arsenic moiety in GaAs was mainly responsible for causing oxidative stress via increased reactive oxygen species (ROS) and nitric oxide (NO) generation, both in vitro and in vivo. Increased ROS further caused apoptosis via mitochondrial driven pathway. Effects of oxidative stress were also confirmed based on alterations in antioxidant enzymes, GPx, GST and SOD in rat brain. We noted that ROS induced oxidative stress caused changes in the brain neurotransmitter levels, Acetylcholinesterase and nitric oxide synthase, leading to loss of memory and learning in rats. The study demonstrates for the first time that the slow release of arsenic moiety from GaAs is mainly responsible for oxidative stress induced apoptosis in neuronal cells causing behavioral changes.

  5. Modelling of the small pixel effect in gallium arsenide X-ray imaging detectors

    CERN Document Server

    Sellin, P J

    1999-01-01

    A Monte Carlo simulation has been carried out to investigate the small pixel effect in highly pixellated X-ray imaging detectors fabricated from semi-insulating gallium arsenide. The presence of highly non-uniform weighting fields in detectors with a small pixel geometry causes the majority of the induced signal to be generated when the moving charges are close to the pixellated contacts. The response of GaAs X-ray imaging detectors is further complicated by the presence of charge trapping, particularly of electrons. In this work detectors are modelled with a pixel pitch of 40 and 150 mu m, and with thicknesses of 300 and 500 mu m. Pulses induced in devices with 40 mu m pixels are due almost totally to the movement of the lightly-trapped holes and can exhibit significantly higher charge collection efficiencies than detectors with large electrodes, in which electron trapping is significant. Details of the charge collection efficiencies as a function of interaction depth in the detector and of the incident phot...

  6. Radiation effects in silicon and gallium arsenide solar cells using isotropic and normally incident radiation

    Science.gov (United States)

    Anspaugh, B. E.; Downing, R. G.

    1984-01-01

    Several types of silicon and gallium arsenide solar cells were irradiated with protons with energies between 50 keV and 10 MeV at both normal and isotropic incidence. Damage coefficients for maximum power relative to 10 MeV were derived for these cells for both cases of omni-directional and normal incidence. The damage coefficients for the silicon cells were found to be somewhat lower than those quoted in the Solar Cell Radiation Handbook. These values were used to compute omni-directional damage coefficients suitable for solar cells protected by coverglasses of practical thickness, which in turn were used to compute solar cell degradation in two proton-dominated orbits. In spite of the difference in the low energy proton damage coefficients, the difference between the handbook prediction and the prediction using the newly derived values was negligible. Damage coefficients for GaAs solar cells for short circuit current, open circuit voltage, and maximum power were also computed relative to 10 MeV protons. They were used to predict cell degradation in the same two orbits and in a 5600 nmi orbit. Results show the performance of the GaAs solar cells in these orbits to be superior to that of the Si cells.

  7. Irradiation effects of swift heavy ions on gallium arsenide, silicon and silicon diodes

    International Nuclear Information System (INIS)

    Bhoraskar, V.N.

    2001-01-01

    The irradiation effects of high energy lithium, boron, oxygen and silicon ions on crystalline silicon, gallium arsenide, porous silicon and silicon diodes were investigated. The ion energy and fluence were varied over the ranges 30 to 100 MeV and 10 11 to 10 14 ions/cm 2 respectively. Semiconductor samples were characterized with the x-ray fluorescence, photoluminescence, thermally stimulated exo-electron emission and optical reflectivity techniques. The life-time of minority carriers in crystalline silicon was measured with a pulsed electron beam and the lithium depth distribution in GaAs was measured with the neutron depth profiling technique. The diodes were characterized through electrical measurements. The results of optical reflectivity, life-time of minority carriers and photoluminescence show that swift heavy ions induce defects in the surface region of crystalline silicon. In the ion-irradiated GaAs, migration of silicon, oxygen and lithium atoms from the buried region towards the surface was observed, with orders of magnitude enhancement in the diffusion coefficients. Enhancement in the photoluminescence intensity was observed in the GaAs and porous silicon samples that, were irradiated with silicon ions. The trade-off between the turn-off time and the voltage, drop in diodes irradiated with different swift heavy ions was also studied. (author)

  8. Seeded growth of boron arsenide single crystals with high thermal conductivity

    Science.gov (United States)

    Tian, Fei; Song, Bai; Lv, Bing; Sun, Jingying; Huyan, Shuyuan; Wu, Qi; Mao, Jun; Ni, Yizhou; Ding, Zhiwei; Huberman, Samuel; Liu, Te-Huan; Chen, Gang; Chen, Shuo; Chu, Ching-Wu; Ren, Zhifeng

    2018-01-01

    Materials with high thermal conductivities are crucial to effectively cooling high-power-density electronic and optoelectronic devices. Recently, zinc-blende boron arsenide (BAs) has been predicted to have a very high thermal conductivity of over 2000 W m-1 K-1 at room temperature by first-principles calculations, rendering it a close competitor for diamond which holds the highest thermal conductivity among bulk materials. Experimental demonstration, however, has proved extremely challenging, especially in the preparation of large high quality single crystals. Although BAs crystals have been previously grown by chemical vapor transport (CVT), the growth process relies on spontaneous nucleation and results in small crystals with multiple grains and various defects. Here, we report a controllable CVT synthesis of large single BAs crystals (400-600 μm) by using carefully selected tiny BAs single crystals as seeds. We have obtained BAs single crystals with a thermal conductivity of 351 ± 21 W m-1 K-1 at room temperature, which is almost twice as conductive as previously reported BAs crystals. Further improvement along this direction is very likely.

  9. Selectivity control of photosensitive structures based on gallium arsenide phosphide solid solutions by changing the rate of surface recombination

    International Nuclear Information System (INIS)

    Tarasov, S A; Andreev, M Y; Lamkin, I A; Solomonov, A V

    2016-01-01

    In this paper, we demonstrate the effect of surface recombination on spectral sensitivity of structures based on gallium arsenide phosphide solid solutions. Simulation of the effect for structures based on a p-n junction and a Schottky barrier was carried out. Photodetectors with different rates of surface recombination were fabricated by using different methods of preliminary treatment of the semiconductor surface. We experimentally demonstrated the possibility to control photodetector selectivity by altering the rate of surface recombination. The full width at half maximum was reduced by almost 4 times, while a relatively small decrease in sensitivity at the maximum was observed. (paper)

  10. A study of ion implanted gallium arsenide using deep level transient spectroscopy

    International Nuclear Information System (INIS)

    Emerson, N.G.

    1981-03-01

    This thesis is concerned with the study of deep energy levels in ion implanted gallium arsenide (GaAs) using deep level transient spectroscopy (D.L.T.S.). The D.L.T.S. technique is used to characterise deep levels in terms of their activation energies and capture cross-sections and to determine their concentration profiles. The main objective is to characterise the effects on deep levels, of ion implantation and the related annealing processes. In the majority of cases assessment is carried out using Schottky barrier diodes. Low doses of selenium ions 1 to 3 x 10 12 cm -2 are implanted into vapour phase epitaxial (V.P.E.) GaAs and the effects of post-implantation thermal and pulsed laser annealing are compared. The process of oxygen implantation with doses in the range 1 x 10 12 to 5 x 10 13 cm -2 followed by thermal annealing at about 750 deg C, introduces a deep level at 0.79 eV from the conduction band. Oxygen implantation, at doses of 5 x 10 13 cm -2 , into V.P.E. GaAs produces a significant increase in the concentration of the A-centre (0.83 eV). High doses of zinc (10 15 cm -2 ) are implanted into n-type V.P.E. GaAs to form shallow p-type layers. The D.L.T.S. system described in the text is used to measure levels in the range 0.16 to 1.1 eV (for GaAs) with a sensitivity of the order 1:10 3 . (U.K.)

  11. Investigation on properties of ultrafast switching in a bulk gallium arsenide avalanche semiconductor switch

    International Nuclear Information System (INIS)

    Hu, Long; Su, Jiancang; Ding, Zhenjie; Hao, Qingsong; Yuan, Xuelin

    2014-01-01

    Properties of ultrafast switching in a bulk gallium arsenide (GaAs) avalanche semiconductor switch based on semi-insulating wafer, triggered by an optical pulse, were analyzed using physics-based numerical simulations. It has been demonstrated that when a voltage with amplitude of 5.2 kV is applied, after an exciting optical pulse with energy of 1 μJ arrival, the structure with thickness of 650 μm reaches a high conductivity state within 110 ps. Carriers are created due to photons absorption, and electrons and holes drift to anode and cathode terminals, respectively. Static ionizing domains appear both at anode and cathode terminals, and create impact-generated carriers which contribute to the formation of electron-hole plasma along entire channel. When the electric field in plasma region increases above the critical value (∼4 kV/cm) at which the electrons drift velocity peaks, a domain comes into being. An increase in carrier concentration due to avalanche multiplication in the domains reduces the domain width and results in the formation of an additional domain as soon as the field outside the domains increases above ∼4 kV/cm. The formation and evolution of multiple powerfully avalanching domains observed in the simulations are the physical reasons of ultrafast switching. The switch exhibits delayed breakdown with the characteristics affected by biased electric field, current density, and optical pulse energy. The dependence of threshold energy of the exciting optical pulse on the biased electric field is discussed

  12. Phase diagram of (Li(1-x)Fe(x))OHFeSe: a bridge between iron selenide and arsenide superconductors.

    Science.gov (United States)

    Dong, Xiaoli; Zhou, Huaxue; Yang, Huaixin; Yuan, Jie; Jin, Kui; Zhou, Fang; Yuan, Dongna; Wei, Linlin; Li, Jianqi; Wang, Xinqiang; Zhang, Guangming; Zhao, Zhongxian

    2015-01-14

    Previous experimental results have shown important differences between iron selenide and arsenide superconductors which seem to suggest that the high-temperature superconductivity in these two subgroups of iron-based families may arise from different electronic ground states. Here we report the complete phase diagram of a newly synthesized superconducting (SC) system, (Li1-xFex)OHFeSe, with a structure similar to that of FeAs-based superconductors. In the non-SC samples, an antiferromagnetic (AFM) spin-density-wave (SDW) transition occurs at ∼127 K. This is the first example to demonstrate such an SDW phase in an FeSe-based superconductor system. Transmission electron microscopy shows that a well-known √5×√5 iron vacancy ordered state, resulting in an AFM order at ∼500 K in AyFe2-xSe2 (A = metal ions) superconductor systems, is absent in both non-SC and SC samples, but a unique superstructure with a modulation wave vector q = (1)/2(1,1,0), identical to that seen in the SC phase of KyFe2-xSe2, is dominant in the optimal SC sample (with an SC transition temperature Tc = 40 K). Hence, we conclude that the high-Tc superconductivity in (Li1-xFex)OHFeSe stems from the similarly weak AFM fluctuations as FeAs-based superconductors, suggesting a universal physical picture for both iron selenide and arsenide superconductors.

  13. Revealing the optoelectronic and thermoelectric properties of the Zintl quaternary arsenides ACdGeAs{sub 2} (A = K, Rb)

    Energy Technology Data Exchange (ETDEWEB)

    Azam, Sikander; Khan, Saleem Ayaz [New Technologies—Research Center, University of West Bohemia, Univerzitni 8, 306 14 Pilsen (Czech Republic); Goumri-Said, Souraya, E-mail: Souraya.Goumri-Said@chemistry.gatech.edu [School of Chemistry and Biochemistry and Center for Organic Photonics and Electronics, Georgia Institute of Technology, Atlanta, GA 30332-0400 (United States)

    2015-10-15

    Highlights: • Zintl tetragonal phase ACdGeAs{sub 2} (A = K, Rb) are chalcopyrite and semiconductors. • Their direct band gap is suitable for PV, optolectronic and thermoelectric applications. • Combination of DFT and Boltzmann transport theory is employed. • The present arsenides are found to be covalent materials. - Abstract: Chalcopyrite semiconductors have attracted much attention due to their potential implications in photovoltaic and thermoelectric applications. First principle calculations were performed to investigate the electronic, optical and thermoelectric properties of the Zintl tetragonal phase ACdGeAs{sub 2} (A = K, Rb) using the full potential linear augmented plane wave method and the Engle–Vosko GGA (EV–GGA) approximation. The present compounds are found semiconductors with direct band gap and covalent bonding character. The optical transitions are investigated via the dielectric function (real and imaginary parts) along with other related optical constants including refractive index, reflectivity and energy-loss spectrum. Combining results from DFT and Boltzmann transport theory, we reported the thermoelectric properties such as the Seebeck’s coefficient, electrical and thermal conductivity, figure of merit and power factor as function of temperatures. The present chalcopyrite Zintl quaternary arsenides deserve to be explored for their potential applications as thermoelectric materials and for photovoltaic devices.

  14. Understanding charge carrier relaxation processes in terbium arsenide nanoparticles using transient absorption spectroscopy

    Science.gov (United States)

    Vanderhoef, Laura R.

    Erbium arsenide nanoparticles epitaxially grown within III-V semiconductors have been shown to improve the performance of devices for applications ranging from thermoelectrics to THz pulse generation. The small size of rare-earth nanoparticles suggests that interesting electronic properties might emerge as a result of both spatial confinement and surface states. However, ErAs nanoparticles do not exhibit any signs of quantum confinement or an emergent bandgap, and these experimental observations are understood from theory. The incorporation of other rare-earth monopnictide nanoparticles into III-V hosts is a likely path to engineering carrier excitation, relaxation and transport dynamics for optoelectronic device applications. However, the electronic structure of these other rare-earth monopnictide nanoparticles remains poorly understood. The objective of this research is to explore the electronic structure and optical properties of III-V materials containing novel rare-earth monopnictides. We use ultrafast pump-probe spectroscopy to investigate the electronic structure of TbAs nanoparticles in III-V hosts. We start with TbAs:GaAs, which was expected to be similar to ErAs:GaAs. We study the dynamics of carrier relaxation into the TbAs states using optical pump terahertz probe transient absorption spectroscopy. By analyzing how the carrier relaxation rates depend on pump fluence and sample temperature, we conclude that the TbAs states are saturable. Saturable traps suggest the existence of a bandgap for TbAs nanoparticles, in sharp contrast with previous results for ErAs. We then apply the same experimental technique to two samples of TbAs nanoparticles in InGaAs with different concentrations of TbAs. We observe similar relaxation dynamics associated with trap saturation, though the ability to resolve these processes is contingent upon a high enough TbAs concentration in the sample. We have also constructed an optical pump optical probe transient absorption

  15. Photodetectors based on carbon nanotubes deposited by using a spray technique on semi-insulating gallium arsenide

    Directory of Open Access Journals (Sweden)

    Domenico Melisi

    2014-11-01

    Full Text Available In this paper, a spray technique is used to perform low temperature deposition of multi-wall carbon nanotubes on semi-insulating gallium arsenide in order to obtain photodectors. A dispersion of nanotube powder in non-polar 1,2-dichloroethane is used as starting material. The morphological properties of the deposited films has been analysed by means of electron microscopy, in scanning and transmission mode. Detectors with different layouts have been prepared and current–voltage characteristics have been recorded in the dark and under irradiation with light in the range from ultraviolet to near infrared. The device spectral efficiency obtained from the electrical characterization is finally reported and an improvement of the photodetector behavior due to the nanotubes is presented and discussed.

  16. Study of Gallium Arsenide Etching in a DC Discharge in Low-Pressure HCl-Containing Mixtures

    Science.gov (United States)

    Dunaev, A. V.; Murin, D. B.

    2018-04-01

    Halogen-containing plasmas are often used to form topological structures on semiconductor surfaces; therefore, spectral monitoring of the etching process is an important diagnostic tool in modern electronics. In this work, the emission spectra of gas discharges in mixtures of hydrogen chloride with argon, chlorine, and hydrogen in the presence of a semiconducting gallium arsenide plate were studied. Spectral lines and bands of the GaAs etching products appropriate for monitoring the etching rate were determined. It is shown that the emission intensity of the etching products is proportional to the GaAs etching rate in plasmas of HCl mixtures with Ar and Cl2, which makes it possible to monitor the etching process in real time by means of spectral methods.

  17. Characteristics of trap-filled gallium arsenide photoconductive switches used in high gain pulsed power applications

    International Nuclear Information System (INIS)

    ISLAM, N.E.; SCHAMILOGLU, E.; MAR, ALAN; LOUBRIEL, GUILLERMO M.; ZUTAVERN, FRED J.; JOSHI, R.P.

    2000-01-01

    The electrical properties of semi-insulating (SI) Gallium Arsenide (GaAs) have been investigated for some time, particularly for its application as a substrate in microelectronics. Of late this material has found a variety of applications other than as an isolation region between devices, or the substrate of an active device. High resistivity SI GaAs is increasingly being used in charged particle detectors and photoconductive semiconductor switches (PCSS). PCSS made from these materials operating in both the linear and non-linear modes have applications such as firing sets, as drivers for lasers, and in high impedance, low current Q-switches or Pockels cells. In the non-linear mode, it has also been used in a system to generate Ultra-Wideband (UWB) High Power Microwaves (HPM). The choice of GaAs over silicon offers the advantage that its material properties allow for fast, repetitive switching action. Furthermore photoconductive switches have advantages over conventional switches such as improved jitter, better impedance matching, compact size, and in some cases, lower laser energy requirement for switching action. The rise time of the PCSS is an important parameter that affects the maximum energy transferred to the load and it depends, in addition to other parameters, on the bias or the average field across the switch. High field operation has been an important goal in PCSS research. Due to surface flashover or premature material breakdown at higher voltages, most PCSS, especially those used in high power operation, need to operate well below the inherent breakdown voltage of the material. The lifetime or the total number of switching operations before breakdown, is another important switch parameter that needs to be considered for operation at high bias conditions. A lifetime of ∼ 10 4 shots has been reported for PCSS's used in UWB-HPM generation [5], while it has exceeded 10 8 shots for electro-optic drivers. Much effort is currently being channeled in the

  18. High field electron-spin transport and observation of the Dyakonov-Perel spin relaxation of drifting electrons in low temperature-grown gallium arsenide

    International Nuclear Information System (INIS)

    Miah, M. Idrish

    2008-01-01

    High field electron-spin transport in low temperature-grown gallium arsenide is studied. We generate electron spins in the samples by optical pumping. During transport, we observe the Dyakonov-Perel (DP) [M.I. Dyakonov, V.I. Perel, Zh. Eksp. Teor. Fiz. 60 (1971) 1954] spin relaxation of the drifting electrons. The results are discussed and are compared with those obtained in calculations of the DP spin relaxation frequency of the hot electrons. A good agreement is obtained

  19. High field electron-spin transport and observation of the Dyakonov-Perel spin relaxation of drifting electrons in low temperature-grown gallium arsenide

    Energy Technology Data Exchange (ETDEWEB)

    Miah, M. Idrish [Nanoscale Science and Technology Centre, Griffith University, Nathan, Brisbane, QLD 4111 (Australia); Biomolecular and Physical Sciences, Griffith University, Nathan, Brisbane, QLD 4111 (Australia); Department of Physics, University of Chittagong, Chittagong-4331 (Bangladesh)], E-mail: m.miah@griffith.edu.au

    2008-11-17

    High field electron-spin transport in low temperature-grown gallium arsenide is studied. We generate electron spins in the samples by optical pumping. During transport, we observe the Dyakonov-Perel (DP) [M.I. Dyakonov, V.I. Perel, Zh. Eksp. Teor. Fiz. 60 (1971) 1954] spin relaxation of the drifting electrons. The results are discussed and are compared with those obtained in calculations of the DP spin relaxation frequency of the hot electrons. A good agreement is obtained.

  20. Electron tunneling transport across heterojunctions between europium sulfide and indium arsenide

    Science.gov (United States)

    Kallaher, Raymond L.

    This dissertation presents research done on utilizing the ferromagnetic semiconductor europium sulfide (EuS) to inject spin polarized electrons into the non-magnetic semiconductor indium arsenide (InAs). There is great interest in expanding the functionality of modern day electronic circuits by creating devices that depend not only on the flow of charge in the device, but also on the transport of spin through the device. Within this mindset, there is a concerted effort to establish an efficient means of injecting and detecting spin polarized electrons in a two dimensional electron system (2DES) as the first step in developing a spin based field effect transistor. Thus, the research presented in this thesis has focused on the feasibility of using EuS, in direct electrical contact with InAs, as a spin injecting electrode into an InAs 2DES. Doped EuS is a concentrated ferromagnetic semiconductor, whose conduction band undergoes a giant Zeeman splitting when the material becomes ferromagnetic. The concomitant difference in energy between the spin-up and spin-down energy bands makes the itinerant electrons in EuS highly spin polarized. Thus, in principle, EuS is a good candidate to be used as an injector of spin polarized electrons into non-magnetic materials. In addition, the ability to adjust the conductivity of EuS by varying the doping level in the material makes EuS particularly suited for injecting spins into non-magnetic semiconductors and 2DES. For this research, thin films of EuS have been grown via e-beam evaporation of EuS powder. This growth technique produces EuS films that are sulfur deficient; these sulfur vacancies act as intrinsic electron donors and the resulting EuS films behave like heavily doped ferromagnetic semiconductors. The growth parameters and deposition procedures were varied and optimized in order to fabricate films that have minimal crystalline defects. Various properties and characteristics of these EuS films were measured and compared to

  1. Point defects and electric compensation in gallium arsenide single crystals; Punktdefekte und elektrische Kompensation in Galliumarsenid-Einkristallen

    Energy Technology Data Exchange (ETDEWEB)

    Kretzer, Ulrich

    2007-12-10

    In the present thesis the point-defect budget of gallium arsenide single crystals with different dopings is studied. It is shown, in which way the concentration of the single point defects depende on the concentration of the dopants, the stoichiometry deviation, and the position of the Fermi level. For this serve the results of the measurement-technical characterization of a large number of samples, in the fabrication of which these parameters were directedly varied. The main topic of this thesis lies in the development of models, which allow a quantitative description of the experimentally studied electrical and optical properties of gallium arsenide single crystals starting from the point-defect concentrations. Because from point defects charge carriers can be set free, their concentration determines essentially the charge-carrier concentration in the bands. In the ionized state point defects act as scattering centers for free charge carriers and influence by this the drift mobility of the charge carriers. A thermodynamic modeling of the point-defect formation yields statements on the equilibrium concentrations of the point defects in dependence on dopant concentration and stoichiometry deviation. It is show that the electrical properties of the crystals observed at room temperature result from the kinetic suppression of processes, via which the adjustment of a thermodynamic equilibrium between the point defects is mediated. [German] In der vorliegenden Arbeit wird der Punktdefekthaushalt von Galliumarsenid-Einkristallen mit unterschiedlichen Dotierungen untersucht. Es wird gezeigt, in welcher Weise die Konzentration der einzelnen Punktdefekte von der Konzentration der Dotierstoffe, der Stoechiometrieabweichung und der Lage des Ferminiveaus abhaengen. Dazu dienen die Ergebnisse der messtechnischen Charakterisierung einer grossen Anzahl von Proben, bei deren Herstellung diese Parameter gezielt variiert wurden. Der Schwerpunkt der Arbeit liegt in der Entwicklung

  2. Non-local exchange correlation functionals impact on the structural, electronic and optical properties of III-V arsenides

    KAUST Repository

    Anua, N. Najwa

    2013-08-20

    Exchange correlation (XC) energy functionals play a vital role in the efficiency of density functional theory (DFT) calculations, more soundly in the calculation of fundamental electronic energy bandgap. In the present DFT study of III-arsenides, we investigate the implications of XC-energy functional and corresponding potential on the structural, electronic and optical properties of XAs (X = B, Al, Ga, In). Firstly we report and discuss the optimized structural lattice parameters and the band gap calculations performed within different non-local XC functionals as implemented in the DFT-packages: WIEN2k, CASTEP and SIESTA. These packages are representative of the available code in ab initio studies. We employed the LDA, GGA-PBE, GGA-WC and mBJ-LDA using WIEN2k. In CASTEP, we employed the hybrid functional, sX-LDA. Furthermore LDA, GGA-PBE and meta-GGA were employed using SIESTA code. Our results point to GGA-WC as a more appropriate approximation for the calculations of structural parameters. However our electronic bandstructure calculations at the level of mBJ-LDA potential show considerable improvements over the other XC functionals, even the sX-LDA hybrid functional. We report also the optical properties within mBJ potential, which show a nice agreement with the experimental measurements in addition to other theoretical results. © 2013 IOP Publishing Ltd.

  3. Nematic fluctuations in iron arsenides NaFeAs and LiFeAs probed by 75As NMR

    Science.gov (United States)

    Toyoda, Masayuki; Kobayashi, Yoshiaki; Itoh, Masayuki

    2018-03-01

    75As NMR measurements have been made on single crystals to study the nematic state in the iron arsenides NaFeAs, which undergoes a structural transition from a high-temperature (high-T ) tetragonal phase to a low-T orthorhombic phase at Ts=57 K and an antiferromagnetic transition at TN=42 K, and LiFeAs having a superconducting transition at Tc=18 K. We observe the in-plane anisotropy of the electric field gradient η even in the tetragonal phase of NaFeAs and LiFeAs, showing the local breaking of tetragonal C4 symmetry. Then, η is found to obey the Curie-Weiss (CW) law as well as in Ba (Fe1-xCox) 2As2 . The good agreement between η and the nematic susceptibility obtained by electronic Raman spectroscopy indicates that η is governed by the nematic susceptibility. From comparing η in NaFeAs and LiFeAs with η in Ba (Fe1-xCox) 2As2 , we discuss the carrier-doping dependence of the nematic susceptibility. The spin contribution to nematic susceptibility is also discussed from comparing the CW terms in η with the nuclear spin-lattice relaxation rate divided by temperature 1 /T1T . Finally, we discuss the nematic transition in the paramagnetic orthorhombic phase of NaFeAs from the in-plane anisotropy of 1 /T1T .

  4. The effect of hydrostatic pressure on the physical properties of magnesium arsenide in cubic and hexagonal phases

    Energy Technology Data Exchange (ETDEWEB)

    Mokhtari, Ali, E-mail: mokhtari@sci.sku.ac.i [Simulation Laboratory, Department of Physics, Faculty of Science, Shahrekord University, P. B. 115, Shahrekord (Iran, Islamic Republic of); Sedighi, Matin [Simulation Laboratory, Department of Physics, Faculty of Science, Shahrekord University, P. B. 115, Shahrekord (Iran, Islamic Republic of)

    2010-04-01

    Full potential-linearized augmented plane wave (FP-LAPW) method within density functional theory (DFT) was applied to study the structural and electronic properties of the magnesium arsenide in both cubic and hexagonal phases. The exchange-correlation functional was approximated as a generalized gradient functional introduced by Perdew-Burke-Ernzerhof (GGA96) and Engel-Vosko (EV-GGA). The lattice parameters, bulk modulus and its pressure derivative, cohesive energy, band structures and effective mass of electrons and holes (EME and EMH) were obtained and compared to the available experimental and theoretical results. A phase transition was predicted at pressure of about 1.63 GPa from the cubic to the hexagonal phase. The effect of hydrostatic pressure on the behavior of the electronic properties such as band gap, valence bandwidths, anti-symmetry gap (the energy gap between two parts of the valence bands), EME and EMH were investigated using both GGA96 and EV-GGA methods. High applied pressure can decrease (increase) the holes mobility of cubic (hexagonal) phase of this compound.

  5. The effect of hydrostatic pressure on the physical properties of magnesium arsenide in cubic and hexagonal phases

    International Nuclear Information System (INIS)

    Mokhtari, Ali; Sedighi, Matin

    2010-01-01

    Full potential-linearized augmented plane wave (FP-LAPW) method within density functional theory (DFT) was applied to study the structural and electronic properties of the magnesium arsenide in both cubic and hexagonal phases. The exchange-correlation functional was approximated as a generalized gradient functional introduced by Perdew-Burke-Ernzerhof (GGA96) and Engel-Vosko (EV-GGA). The lattice parameters, bulk modulus and its pressure derivative, cohesive energy, band structures and effective mass of electrons and holes (EME and EMH) were obtained and compared to the available experimental and theoretical results. A phase transition was predicted at pressure of about 1.63 GPa from the cubic to the hexagonal phase. The effect of hydrostatic pressure on the behavior of the electronic properties such as band gap, valence bandwidths, anti-symmetry gap (the energy gap between two parts of the valence bands), EME and EMH were investigated using both GGA96 and EV-GGA methods. High applied pressure can decrease (increase) the holes mobility of cubic (hexagonal) phase of this compound.

  6. A final report for Gallium arsenide P-I-N detectors for high-sensitivity imaging of thermal neutrons

    CERN Document Server

    Vernon, S M

    1999-01-01

    This SBIR Phase I developed neutron detectors made FR-om gallium arsenide (GaAs) p-type/ intrinsic/n-type (P-I-N) diodes grown by metalorganic chemical vapor deposition (MOCVD) onto semi-insulating (S1) bulk GaAs wafers. A layer of isotonically enriched boron-10 evaporated onto the FR-ont surface serves to convert incoming neutrons into lithium ions and a 1.47 MeV alpha particle which creates electron-hole pairs that are detected by the GaAs diode. Various thicknesses of ''intrinsic'' (I) undoped GaAs were tested, as was use of a back-surface field (BSF) formed FR-om a layer of Al sub x Ga sub 1 sub - sub x As. Schottky-barrier diodes formed FR-om the same structures without the p+ GaAs top layer were tested as a comparison. After mesa etching and application of contacts, devices were tested in visible light before application of the boron coating. Internal quantum efficiency (IQE) of the best diode near the GaAs bandedge is over 90%. The lowest dark current measured is 1 x 10 sup - sup 1 sup 2 amps at -1 V o...

  7. Study by optical spectroscopy of the interaction between a hydrogen multi-polar plasma and a gallium arsenide surface

    International Nuclear Information System (INIS)

    Ferdinand, Robin

    1990-01-01

    The objective of this research thesis has been to understand which are the involved species during the deoxidation-passivation stage of the processing of gallium arsenide platelets used in semiconductor industry. The author describes problems related to the presence of oxides, and highlights the benefit of using a hydrogen multi-polar plasma to softly remove surface oxides. The experimental set-up is notably characterised by the role of magnetic confinement and its influence on plasma. A theoretical model is then developed for a better understanding of chemical and physical-chemical reactions occurring in the hydrogen plasma. Based on the use of the Boltzmann equation, the model calculates the electron energy distribution function, and allows the follow-up of species present in the plasma with respect to available and accessible parameters (pressure, discharge current, discharge voltage). A spectroscopic study of the hydrogen plasma is then reported, and the numerical model is validated by interpreting line shapes of the hydrogen Balmer series. A second experimental approach, based on electrostatic probes, is implemented, and the Laframboise theory is applied to this technique and allows electronic and ionic densities, and electron temperature to be determined. Experimental and numerical results are compared. All this leads to the study of the interaction of plasma with a sample, with a first step of study of a mixture plasma containing 85 per cent of hydrogen and 15 per cent of arsine, in order to get a general knowledge of emissions related to the presence of AsH 3 . Finally, interaction studies are performed by using laser-induced fluorescence and conventional space-resolved optical spectroscopy

  8. Determination of frequencies of atomic oscillations along the fourth order symmetry axis in indium arsenide according to thermal diffusion scattering of X-rays

    International Nuclear Information System (INIS)

    Orlova, N.S.

    1978-01-01

    Intensity of diffusion scattering of X-rays from the plane of a monocrystal of indium arsenide has been measured on the monochromatized CuKsub(α)-radiation. The samples are made of Cl indium arsenide monocrystal of the n-type with the 1x10 18 cm -3 concentration of carriers in the form of a plate with the polished parallel cut-off with the +-5' accuracy. The investigations have been carried out on the URS-5 IM X-ray diffractometer at room temperature in vacuum. Intensities of thermal diffusion scattering of the second order have been calculated by the two-atomic chain model with different mass and four interaction paramaters. Based upon the analysis of intensity of single-phonon diffusion scattering the curves of frequencies of atomic oscillations along the direction [100] have been determined. The values of frequencies obtained experimentally on the thermal diffusion scattering of X-rays are in a satisfactory agreement with the calculated data. The frequencies obtained are compared with the results of calculation and the analysis of multiphonon spectra of IR-absorption made elsewhere

  9. Determination of iron, cobalt and zinc in caries teeth by neutron activation analysis

    International Nuclear Information System (INIS)

    Moriwaki, Kazunari; Shimpuku, Yasuhiro; Furuyama, Shunsuke

    1999-01-01

    The concentration of Fe, Zn and Co in caries teeth was determined by neutron activation analysis to compare with those of complete impacted wisdom teeth. In order to investigate the distribution of three elements, molar teeth were separated not by conventional method like precipitation or UV absorption method but by ashing method. Furthermore, the same elements for dental pulp and softened dentin were determined. The following results were obtained: The concentration of three elements (Fe, Zn and Co) in enamel, dentin and cementum of caries teeth was higher than that in control teeth. Enamel contained more Fe and Co than those in dentin or cementum, whereas Zn was found to be evenly distributed in three parts of the teeth. The concentration of the elements was Zn>Fe>Co in softened dentin, Fe>Zn>Co in dental pulp. (author)

  10. Study of soft magnetic iron cobalt based alloys processed by powder injection molding

    International Nuclear Information System (INIS)

    Silva, Aline; Lozano, Jaime A.; Machado, Ricardo; Escobar, Jairo A.; Wendhausen, Paulo A.P.

    2008-01-01

    As a near net shape process, powder injection molding (PIM) opens new possibilities to process Fe-Co alloys for magnetic applications. Due to the fact that PIM does not involve plastic deformation of the material during processing, we envisioned the possibility of eliminating vanadium (V), which is generally added to Fe-Co alloys to improve the ductility in order to enable its further shaping by conventional processes such as forging and cold rolling. In our investigation we have found out two main futures related to the elimination of V, which lead to a cost-benefit gain in manufacturing small magnetic components where high-saturation induction is needed at low frequencies. Firstly, the elimination of V enables the achievement of much better magnetic properties when alloys are processed by PIM. Secondly, a lower sintering temperature can be used when the alloy is processed starting with elemental Fe and Co powders without the addition of V

  11. Acrylate intercalation and in situ polymerization in iron-, cobalt-, or manganese-substituted nickel hydroxides.

    Science.gov (United States)

    Vaysse, C; Guerlou-Demourgues, L; Duguet, E; Delmas, C

    2003-07-28

    A chimie douce route based on successive redox and exchange reactions has allowed us to prepare new hybrid organic-inorganic materials, composed of polyacrylate macromolecules intercalated into layered double hydroxides (LDHs), deriving from Ni(OH)(2). Monomer intercalation and in situ polymerization mechanisms have appeared to be strongly dependent upon the nature of the substituting cation in the slabs. In the case of iron-based LDHs, a phase containing acrylate monomeric intercalates has been isolated and identified by X-ray diffraction and infrared spectroscopy. Second, interslab free-radical polymerization of acrylate anions has been successfully initiated using potassium persulfate. In cobalt- or manganese-based LDHs, one-step polymerization has been observed, leading directly to a material containing polyacrylate intercalate.

  12. Synthesis and characterization of iron-cobalt (FeCo) alloy nanoparticles supported on carbon

    DEFF Research Database (Denmark)

    Koutsopoulos, Sotiris; Barfod, Rasmus; Eriksen, Kim Michael

    2017-01-01

    of the alloy nanoparticles differed depending on the preparation method. When the wet impregnation technique of acetate precursor salts of Fe and Co were used for the synthesis, the size of FeCo alloy nanoparticles was approximately 13 nm. FeCo alloy nanoparticles were characterized by crystallography (XRD...

  13. High density tungsten-nickel-iron-cobalt alloys having improved hardness and method for making same

    International Nuclear Information System (INIS)

    Penrice, T.W.; Bost, J.

    1988-01-01

    This patent describes the process of making high density alloy containing about 85 to 98 weight percent tungsten and the balance of the alloy being essentially a binder of nickel, iron and cobalt, and wherein the cobalt is present in an amount within the range of about 5 to 47.5 weight percent of the binder, comprising: blending powders of the tungsten, nickel, iron and cobalt into a homogeneous composition, compacting the homogeneous composition into a shaped article, heating the shaped article to a temperature and for a time sufficient to sinter the article, subjecting the sintered article to a temperature sufficient to enable the intermetallic phase formed at the matrix to tungsten interface to diffuse into the gamma austenitic phase whereby the alpha tungsten/gamma austenite boundaries are essentially free of such intermetallic phase, quenching the article, and swaging the article to a reduction in area of about 5 to 40 percent, the article having improved mechanical properties, including improved tensile strength and hardness while maintaining suitable ductility for subsequent working thereof

  14. Magnetic susceptibility measurement of single iron/cobalt carbonyl microcrystal by atmospheric magnetophoresis

    Czech Academy of Sciences Publication Activity Database

    Suwa, M.; Oshino, Y.; Watarai, H.; Kasai, A.; Šubrt, Jan

    2008-01-01

    Roč. 9, č. 2 (2008), , 024215-1-024215-6 ISSN 1468-6996 Institutional research plan: CEZ:AV0Z40320502 Keywords : magnetophoresis under atmosphere Subject RIV: CA - Inorganic Chemistry Impact factor: 1.267, year: 2008

  15. The roles of the temperature on the structural and electronic properties of deep-level V{sub As}V{sub Ga} defects in gallium arsenide

    Energy Technology Data Exchange (ETDEWEB)

    Ma, Deming, E-mail: xautmdm@163.com; Chen, Xi; Qiao, Hongbo; Shi, Wei; Li, Enling

    2015-07-15

    Highlights: • The energy gap of the Ga{sub As}As{sub Ga}V{sub As}V{sub Ga} is 0.82 eV. • Proves that the Ga{sub As}As{sub Ga}V{sub As}V{sub Ga} belongs to EL2 deep-level defect in GaAs. • Proves that EL2 and EL6 deep-level defects can transform into each other. • Temperature has an important effect on the microstructure of deep-level defects. - Abstract: The roles of temperature on the structural and electronic properties of V{sub As}V{sub Ga} defects in gallium arsenide have been studied by using ab-initio molecular dynamic (MD) simulation. Our calculated results show that the relatively stable quaternary complex defect of Ga{sub As}As{sub Ga}V{sub As}V{sub Ga} can be converted from the V{sub As}V{sub Ga} complex clusters defect between 300 K and 1173 K; however, from 1173 K to 1373 K, the decomposition of the complex defect Ga{sub As}As{sub Ga}V{sub As}V{sub Ga} occurs, turning into a deep-level V{sub As}V{sub Ga} cluster defect and an isolated As{sub Ga} antisite defect, and relevant defect of Ga{sub As} is recovered. The properties of Ga{sub As}As{sub Ga}V{sub As}V{sub Ga} defect has been studied by first-principles calculations based on hybrid density functional theory. Our calculated results show that the Ga{sub As}As{sub Ga}V{sub As}V{sub Ga} belongs to EL2 deep-level defect in GaAs. Thus, we reveal that the temperature has an important effect on the microstructure of deep-level defects and defect energy level in gallium arsenide that EL2 and EL6 deep-level defects have a certain correlation, which means they could transform into each other. Controlling temperature in the growth process of GaAs could change the microstructure of deep-level defects and defect energy levels in gallium arsenide materials, whereby affects the electron transport properties of materials.

  16. Study of current instabilities in high resistivity gallium arsenide; Etude des instabilites de courant dans l'arseniure de gallium de haute resistivite

    Energy Technology Data Exchange (ETDEWEB)

    Barraud, A [Commissariat a l' Energie Atomique, Saclay (France). Centre d' Etudes Nucleaires

    1968-07-01

    We have shown the existence and made a study of the current oscillations produced in high-resistivity gallium arsenide by a strong electric field. The oscillations are associated with the slow travelling of a region of high electrical field across the whole sample. An experimental study of the properties of these instabilities has made it possible for us to distinguish this phenomenon from the Gunn effect, from acoustic-electric effects and from contact effects. In order to account for this type of instability, a differential trapping mechanism involving repulsive impurities is proposed; this mechanism can reduce the concentration of charge carriers in the conduction band at strong electrical fields and can lead to the production of a high-field domain. By developing this model qualitatively we have been able to account for all the properties of high-resistance gallium arsenide crystals subjected to a strong electrical field: increase of the Hall constant, existence of a voltage threshold for these oscillations, production of domains of high field, low rate of propagation of these domains, and finally the possibility of inverting the direction of the propagation of the domain without destroying the latter. A quantitative development of the model makes it possible to calculate the various characteristic parameters of these instabilities. Comparison with experiment shows that there is a good agreement, the small deviations coming especially from the lack of knowledge concerning transport properties in gallium arsenide subjected to high fields. From a study of this model, it appears that the instability phenomenon can occur over a wide range of repulsive centre concentrations, and also for a large range of resistivities. This is the reason why it appears systematically in gallium arsenide of medium and high resistivity. (authors) [French] Nous avons mis en evidence et etudie des oscillations de courant qui se produisent a champ electrique eleve dans l'arseniure de

  17. Gallium arsenide injection lasers

    International Nuclear Information System (INIS)

    Thompson, G.H.B.

    1975-01-01

    The semiconductor injection laser includes a thin inner GaAs p-n junction layer between two outer GaAlAs layers which are backed by further thin outer GaAlAs layers with a heavier doping of AlAs. This reduces optical losses. Optical energy is further confined within the inner layers and the lasing threshold reduced by added outer GaAs layers of low electrical and thermal resistivity

  18. Indium Arsenide Nanowires

    DEFF Research Database (Denmark)

    Madsen, Morten Hannibal

    -ray diffraction. InAs NWs can be used in a broad range of applications, including detectors, high speed electronics and low temperature transport measurements, but in this thesis focus will be put on biological experiments on living cells. Good control of Au-assisted InAs NW growth has been achieved......This thesis is about growth of Au-assisted and self-assisted InAs nanowires (NWs). The wires are synthesized using a solid source molecular beam epitaxy (MBE) system and characterized with several techniques including scanning electron microscopy (SEM), transmission electron microscopy (TEM) and x...... by a systematic study to optimize the growth conditions; first the Au deposition, then the growth temperature and finally the beam fluxes. For further control of the growth, Au droplets have been positioned with electron beam lithography and large scale arrays with a > 99 % yield have been made on 2 inch...

  19. Biological monitoring of arsenic exposure of gallium arsenide- and inorganic arsenic-exposed workers by determination of inorganic arsenic and its metabolites in urine and hair

    Energy Technology Data Exchange (ETDEWEB)

    Yamauchi, H.; Takahashi, K.; Mashiko, M.; Yamamura, Y. (St. Marianna Univ. School of Medicine, Kawasaki (Japan))

    1989-11-01

    In an attempt to establish a method for biological monitoring of inorganic arsenic exposure, the chemical species of arsenic were measured in the urine and hair of gallium arsenide (GaAs) plant and copper smelter workers. Determination of urinary inorganic arsenic concentration proved sensitive enough to monitor the low-level inorganic arsenic exposure of the GaAs plant workers. The urinary inorganic arsenic concentration in the copper smelter workers was far higher than that of a control group and was associated with high urinary concentrations of the inorganic arsenic metabolites, methylarsonic acid (MAA) and dimethylarsinic acid (DMAA). The results established a method for exposure level-dependent biological monitoring of inorganic arsenic exposure. Low-level exposures could be monitored only by determining urinary inorganic arsenic concentration. High-level exposures clearly produced an increased urinary inorganic arsenic concentration, with an increased sum of urinary concentrations of inorganic arsenic and its metabolites (inorganic arsenic + MAA + DMAA). The determination of urinary arsenobetaine proved to determine specifically the seafood-derived arsenic, allowing this arsenic to be distinguished clearly from the arsenic from occupational exposure. Monitoring arsenic exposure by determining the arsenic in the hair appeared to be of value only when used for environmental monitoring of arsenic contamination rather than for biological monitoring.

  20. Platinum-group elements fractionation by selective complexing, the Os, Ir, Ru, Rh-arsenide-sulfide systems above 1020 °C

    Science.gov (United States)

    Helmy, Hassan M.; Bragagni, Alessandro

    2017-11-01

    The platinum-group element (PGE) contents in magmatic ores and rocks are normally in the low μg/g (even in the ng/g) level, yet they form discrete platinum-group mineral (PGM) phases. IPGE (Os, Ir, Ru) + Rh form alloys, sulfides, and sulfarsenides while Pt and Pd form arsenides, tellurides, bismuthoids and antimonides. We experimentally investigate the behavior of Os, Ru, Ir and Rh in As-bearing sulfide system between 1300 and 1020 °C and show that the prominent mineralogical difference between IPGE (+Rh) and Pt and Pd reflects different chemical preference in the sulfide melt. At temperatures above 1200 °C, Os shows a tendency to form alloys. Ruthenium forms a sulfide (laurite RuS2) while Ir and Rh form sulfarsenides (irarsite IrAsS and hollingworthite RhAsS, respectively). The chemical preference of PGE is selective: IPGE + Rh form metal-metal, metal-S and metal-AsS complexes while Pt and Pd form semimetal complexes. Selective complexing followed by mechanical separation of IPGE (and Rh)-ligand from Pt- and Pd-ligand associations lead to PGE fractionation.

  1. Atmospheric pressure chemical vapour deposition of vanadium arsenide thin films via the reaction of VCl4 or VOCl3 with tBuAsH2

    International Nuclear Information System (INIS)

    Thomas, Tegan; Blackman, Christopher S.; Parkin, Ivan P.; Carmalt, Claire J.

    2013-01-01

    Thin films of vanadium arsenide were deposited via the dual-source atmospheric pressure chemical vapour deposition reactions of VCl 4 or VOCl 3 with t BuAsH 2 . Using the vanadium precursor VCl 4 , films were deposited at substrate temperatures of 550–600 °C, which were black-gold in appearance and were found to be metal-rich with high levels of chlorine incorporation. The use of VOCl 3 as the vanadium source resulted in films being deposited between 450 and 600 °C and, unlike when using VCl 4 , were silver in appearance. The films deposited using VOCl 3 demonstrated vanadium to arsenic ratios close to 1:1, and negligible chlorine incorporation. Films deposited using either vanadium precursor were identified as VAs using powder X-ray diffraction and possessed borderline metallic/semiconductor resistivities. - Highlights: • Formation of VAs films via atmospheric pressure chemical vapour deposition. • Films formed using VCl 4 or VOCl 3 and t BuAsH 2 . • Powder X-ray diffraction showed that crystalline VAs films were deposited. • Films from VOCl 3 had a V:As ratio close to 1 with negligible Cl incorporation. • Films were silver and possessed borderline metallic/semiconductor resistivities

  2. A novel wide range, real-time neutron fluence monitor based on commercial off the shelf gallium arsenide light emitting diodes

    Energy Technology Data Exchange (ETDEWEB)

    Mukherjee, B., E-mail: bhaskar.mukherjee@uk-essen.de [Westdeutsches Protonentherapiezentrum Essen (WPE) gGmbH, Hufelandstrasse 55, D-45147 Essen (Germany); Hentschel, R. [Strahlenklinik, University Hospital Essen (Germany); Lambert, J. [Westdeutsches Protonentherapiezentrum Essen (WPE) gGmbH, Hufelandstrasse 55, D-45147 Essen (Germany); Deya, W. [Strahlenklinik, University Hospital Essen (Germany); Farr, J. [Westdeutsches Protonentherapiezentrum Essen (WPE) gGmbH, Hufelandstrasse 55, D-45147 Essen (Germany)

    2011-10-01

    Displacement damage produced by high-energy neutrons in gallium arsenide (GaAs) light emitting diodes (LED) results in the reduction of light output. Based on this principle we have developed a simple, cost effective, neutron detector using commercial off the shelf (COTS) GaAs-LED for the assessment of neutron fluence and KERMA at critical locations in the vicinity of the 230 MeV proton therapy cyclotron operated by Westdeutsches Protonentherapiezentrum Essen (WPE). The LED detector response (mV) was found to be linear within the neutron fluence range of 3.0x10{sup 8}-1.0x10{sup 11} neutron cm{sup -2}. The response of the LED detector was proportional to neutron induced displacement damage in LED; hence, by using the differential KERMA coefficient of neutrons in GaAs, we have rescaled the calibration curve for two mono-energetic sources, i.e. 1 MeV neutrons and 14 MeV neutrons generated by D+T fusion reaction. In this paper we present the principle of the real-time GaAs-LED based neutron fluence monitor as mentioned above. The device was calibrated using fast neutrons produced by bombarding a thick beryllium target with 14 MeV deuterons from a TCC CV 28 medical cyclotron of the Strahlenklinik University Hospital Essen.

  3. Application of low-cost Gallium Arsenide light-emitting-diodes as kerma dosemeter and fluence monitor for high-energy neutrons

    International Nuclear Information System (INIS)

    Mukherjee, B.; Simrock, S.; Khachan, J.; Rybka, D.; Romaniuk, R.

    2007-01-01

    Displacement damage (DD) caused by fast neutrons in unbiased Gallium Arsenide (GaAs) light emitting diodes (LED) resulted in a reduction of the light output. On the other hand, a similar type of LED irradiated with gamma rays from a 60 Co source up to a dose level in excess of 1.0 kGy (1.0 x 10 5 rad) was found to show no significant drop of the light emission. This phenomenon was used to develop a low cost passive fluence monitor and kinetic energy released per unit mass dosemeter for accelerator-produced neutrons. These LED-dosemeters were used to assess the integrated fluence of photoneutrons, which were contaminated with a strong Bremsstrahlung gamma-background generated by the 730 MeV superconducting electron linac driving the free electron laser in Hamburg (FLASH) at Deutsches Elektronen-Synchrotron. The applications of GaAs LED as a routine neutron fluence monitor and DD precursor for the electronic components located in high-energy accelerator environment are highlighted. (authors)

  4. Solubility of platinum-arsenide melt and sperrylite in synthetic basalt at 0.1 MPa and 1200 °C with implications for arsenic speciation and platinum sequestration in mafic igneous systems

    Science.gov (United States)

    Canali, A. C.; Brenan, J. M.; Sullivan, N. A.

    2017-11-01

    To better understand the Pt-As association in natural magmas, experiments were done at 1200 °C and 0.1 MPa to measure the solubility of Pt and Pt-arsenide phases (melt and sperrylite, PtAs2), as well as to determine the oxidation state, and identify evidence for Pt-As complexing, in molten silicate. Samples consisting of synthetic basalt contained in chromite crucibles were subject to three experimental procedures. In the first, platinum solubility in the synthetic basalt was determined without added arsenic by equilibrating the sample with a platinum source (embedded wire or bead) in a gas-mixing furnace. In the second, the sample plus a Pt-arsenide source was equilibrated in a vacuum-sealed fused quartz tube containing a solid-oxide oxygen buffer. The third approach involved two steps: first equilibrating the sample in a gas-mixing furnace, then with added arsenide melt in a sealed quartz tube. Oxygen fugacity was estimated in the latter step using chromite/melt partitioning of vanadium. Method two experiments done at high initial arsenic activity (PtAs melt + PtAs2), showed significant loss of arsenic from the sample, the result of vapour transfer to newly-formed arsenide phases in the buffer. Method three experiments showed no loss of arsenic, yielding a uniform final distribution in the sample. Analyses of run-product glasses from experiments which did not show arsenic loss reveal significant increase in arsenic concentrations with fO2, varying from ∼10 ppm (FMQ-3.25) to >10,000 ppm (FMQ + 5.5). Despite very high arsenic loadings (>1000 ppm), the solubility of Pt is similar in arsenic-bearing and arsenic-free glasses. The variation in arsenic solubility with fO2 shows a linear relationship, that when corrected for the change in the activity of dissolved arsenic with the melt ferric/ferrous ratio, yields a solubility-fO2 relationship consistent with As3+ as the dissolved species. This result is confirmed by X-ray absorption near edge structure (XANES

  5. a Positron 2D-ACAR Study of the Silicon-Dioxide Interface and the Point Defects in the Semi-Insulating Gallium Arsenide

    Science.gov (United States)

    Peng, Jianping

    The SiO_2-Si system has been the subject of extensive study for several decades. Particular interest has been paid to the interface between Si single crystal and the amorphous SiO_2 which determines the properties and performances of devices. This is significant because of the importance of Si technology in the semiconductor industry. The development of the high-intensity slow positron beam at Brookhaven National Laboratory make it possible to study this system for the first time using the positron two-dimensional angular correlation of annihilation radiation (2D-ACAR) technique. 2D-ACAR is a well established and is a non-destructive microscopic probe for studying the electronic structure of materials, and for doing the depth-resolved measurements. Some unique information was obtained from the measurements performed on the SiO_2-Si system: Positronium (Ps) atoms formation and trapping in microvoids in both oxide and interface regions; and positron annihilation at vacancy-like defects in the interface region which can be attributed to the famous Pb centers. The discovery of the microvoids in the interface region may have some impact on the fabrication of the next generation electronic devices. Using the conventional 2D-ACAR setup with a ^{22}Na as positron source, we also studied the native arsenic (As) vacancy in the semi -insulating gallium-arsenide (SI-GaAs), coupled with in situ infrared light illumination. The defect spectrum was obtained by comparing the spectrum taken without photo -illumination to the spectrum taken with photo-illumination. The photo-illumination excited electrons from valence band to the defect level so that positrons can become localized in the defects. The two experiments may represent a new direction of the application of positron 2D-ACAR technique on the solid state physics and materials sciences.

  6. Surface chemistry and electrocatalytic behaviour of tetra-carboxy substituted iron, cobalt and manganese phthalocyanine monolayers on gold electrode

    International Nuclear Information System (INIS)

    Mashazi, Philani N.; Westbroek, Philippe; Ozoemena, Kenneth I.; Nyokong, Tebello

    2007-01-01

    Surface chemistry and electrocatalytic properties of self-assembled monolayers of metal tetra-carboxylic acid phthalocyanine complexes with cobalt (Co), iron (Fe) and manganese (Mn) as central metal ions have been studied. These phthalocyanine molecules are immobilized on gold electrode via the coupling reaction between the ring substituents and pre-formed mercaptoethanol self-assembled monolayer (Au-ME SAM). X-ray photoelectron spectroscopy (XPS) and Raman spectroscopy confirmed chemisorption of mercaptoethanol via sulfur group on gold electrode and also coupling reaction between phthalocyanines and Au-ME SAM. Electrochemical parameters of the immobilized molecules show that these molecules are densely packed with a perpendicular orientation. The potential applications of the gold modified electrodes were investigated towards L-cysteine detection and the analysis at phthalocyanine SAMs. Cobalt and iron tetra-carboxylic acid phthalocyanine monolayers showed good oxidation peak for L-cysteine at potentials where metal oxidation (M III /M II ) takes place and this metal oxidation mediates the catalytic oxidation of L-cysteine. Manganese tetra-carboxylic acid phthalocyanine monolayer also exhibited a good catalytic oxidation peak towards L-cysteine at potentials where Mn IV /Mn III redox peak occurs and this redox peak mediates L-cysteine oxidation. The analysis of cysteine at phthalocyanine monolayers displayed good analytical parameters with good detection limits of the orders of 10 -7 mol L -1 and good linearity for a studied concentration range up to 60 μmol L -1

  7. Creep Behavior Of Thin Laminates Of Iron-Cobalt Alloys For Use In Switched Reluctance Motors And Generators

    OpenAIRE

    Fingers, Richard Todd

    1997-01-01

    The United States Air Force is in the process of developing magnetic bearings as well as an aircraft Integrated Power Unit and an Internal Starter/Generator for main propulsion engines. These developments are the driving force behind a new emphasis on high temperature, high strength magnetic materials for power applications. Analytical work, utilizing elasticity theory, in conjunction with design requirements, indicates a need for magnetic materials to have strengths in excess of 80 ksi up ...

  8. Magnetic properties of iron-oxide and (iron, cobalt)-oxide nanoparticles synthesized in polystyrene resin matrix

    International Nuclear Information System (INIS)

    Naik, R.; Kroll, E.; Rodak, D.; Tsoi, G.M.; McCullen, E.; Wenger, L.E.; Suryanarayanan, R.; Naik, V.M.; Vaishnava, P.P.; Tao, Qu; Boolchand, P.

    2004-01-01

    A sulfonated polystyrene resin matrix was ion exchanged with aqueous solutions of (1) FeCl 2 , (2) FeCl 3 , (3) 2FeCl 2 :FeCl 3 , (4) 9FeCl 2 :CoCl 2 , and (5) 4FeCl 2 :CoCl 2 to prepare magnetic nanoparticles of varying size. The samples were characterized by X-ray diffraction (XRD), 57 Fe Mossbauer spectroscopy, X-ray photoelectron spectroscopy (XPS), and transmission electron microscopy (TEM), and identify two major phases: γ-Fe 2 O 3 , CoFe 2 O 4 , and perhaps a minor Fe 3 O 4 phase. SQUID magnetometry measurements indicate superparamagnetic particles with blocking temperatures (T B ) ranging from 20 K to room temperature

  9. Magnetic properties of iron-oxide and (iron, cobalt)-oxide nanoparticles synthesized in polystyrene resin matrix

    Energy Technology Data Exchange (ETDEWEB)

    Naik, R. E-mail: naik@physics.wayne.edu; Kroll, E.; Rodak, D.; Tsoi, G.M.; McCullen, E.; Wenger, L.E.; Suryanarayanan, R.; Naik, V.M.; Vaishnava, P.P.; Tao, Qu; Boolchand, P

    2004-05-01

    A sulfonated polystyrene resin matrix was ion exchanged with aqueous solutions of (1) FeCl{sub 2}, (2) FeCl{sub 3}, (3) 2FeCl{sub 2}:FeCl{sub 3}, (4) 9FeCl{sub 2}:CoCl{sub 2}, and (5) 4FeCl{sub 2}:CoCl{sub 2} to prepare magnetic nanoparticles of varying size. The samples were characterized by X-ray diffraction (XRD), {sup 57}Fe Mossbauer spectroscopy, X-ray photoelectron spectroscopy (XPS), and transmission electron microscopy (TEM), and identify two major phases: {gamma}-Fe{sub 2}O{sub 3}, CoFe{sub 2}O{sub 4}, and perhaps a minor Fe{sub 3}O{sub 4} phase. SQUID magnetometry measurements indicate superparamagnetic particles with blocking temperatures (T{sub B}) ranging from 20 K to room temperature.

  10. Magnetic properties of iron-oxide and (iron, cobalt)-oxide nanoparticles synthesized in polystyrene resin matrix

    Science.gov (United States)

    Naik, R.; Kroll, E.; Rodak, D.; Tsoi, G. M.; McCullen, E.; Wenger, L. E.; Suryanarayanan, R.; Naik, V. M.; Vaishnava, P. P.; Tao, Qu; Boolchand, P.

    2004-05-01

    A sulfonated polystyrene resin matrix was ion exchanged with aqueous solutions of (1) FeCl2, (2) FeCl3, (3) 2FeCl2:FeCl3, (4) 9FeCl2:CoCl2, and (5) 4FeCl2:CoCl2 to prepare magnetic nanoparticles of varying size. The samples were characterized by X-ray diffraction (XRD), 57Fe Mossbauer spectroscopy, X-ray photoelectron spectroscopy (XPS), and transmission electron microscopy (TEM), and identify two major phases: γ-Fe2O3, CoFe2O4, and perhaps a minor Fe3O4 phase. SQUID magnetometry measurements indicate superparamagnetic particles with blocking temperatures (TB) ranging from 20K to room temperature.

  11. The quaternary arsenide oxides Ce{sub 9}Au{sub 5-x}As{sub 8}O{sub 6} and Pr{sub 9}Au{sub 5-x}As{sub 8}O{sub 6}

    Energy Technology Data Exchange (ETDEWEB)

    Bartsch, Timo; Hoffmann, Rolf-Dieter; Poettgen, Rainer [Univ. Muenster (Germany). Inst. fuer Anorganische und Analytische Chemie

    2016-07-01

    The quaternary gold arsenide oxides Ce{sub 9}Au{sub 5-x}As{sub 8}O{sub 6} and Pr{sub 9}Au{sub 5-x}As{sub 8}O{sub 6} were synthesized from the rare earth elements (RE), rare earth oxides, arsenic and gold powder at maximum annealing temperatures of 1173 K. The structures were refined from single crystal X-ray diffractometer data: Pnnm, a=1321.64(6) pm, b=4073.0(3), c=423.96(2), wR2=0.0842, 3106 F{sup 2} values, 160 variables for Ce{sub 9}Au{sub 4.91(4)}As{sub 8}O{sub 6} and Pnnm, a=1315.01(4), b=4052.87(8), c=420.68(1) pm, wR2=0.0865, 5313 F{sup 2} values, 160 variables for Pr{sub 9}Au{sub 4.75(1)}As{sub 8}O{sub 6}. They represent a new structure type and show a further extension of pnictide oxide crystal chemistry. A complex polyanionic gold arsenide network [Au{sub 5}As{sub 8}]{sup 15-} (with some disorder in the gold substructure) is charge compensated with polycationic strands of condensed edge-sharing O rate at RE{sub 4/4} and O rate at RE{sub 4/3} tetrahedra ([RE{sub 4}O{sub 3}]{sub 2}{sup 12+}) as well as RE{sup 3+} cations in cavities.

  12. Evolution of magnetic and superconducting phases with doping and pressure in the underdoped iron-arsenide superconductor Ba{sub 1-x}K{sub x}Fe{sub 2}As{sub 2}

    Energy Technology Data Exchange (ETDEWEB)

    Hassinger, Elena [Universite de Sherbrooke, Quebec (Canada); Canadian Institute for Advanced Research, Toronto, Ontario (Canada); Max Planck Institut fuer Chemische Physik fester Stoffe, Dresden (Germany); Gredat, Gregory; Valade, Fabrice; Rene de Cotret, Samuel; Juneau-Fecteau, Alexandre; Reid, Jean-Philippe; Doiron-Leyraud, Nicolas [Universite de Sherbrooke, Quebec (Canada); Kim, H.; Tanatar, Makariy A.; Prozorov, Ruslan [Ames Laboratory, Ames, Iowa (United States); Shen, B.; Wen, H.H. [Nanjing University (China); Taillefer, Louis [Universite de Sherbrooke, Quebec (Canada); Canadian Institute for Advanced Research, Toronto, Ontario (Canada)

    2015-07-01

    The electrical resistivity ρ of the iron-arsenide superconductor Ba{sub 1-x}K{sub x}Fe{sub 2}As{sub 2} was measured in applied pressures up to 2.75 GPa for seven underdoped samples. Six of them are antiferromagnetic at P = 0 with 0.16 < x < 0.24 and one is non-magnetic with x = 0.26. The stripe-like antiferromagnetic ordering temperature T{sub N}, detected as a sharp anomaly in ρ(T), decreases linearly with pressure. For every magnetic sample a second phase appears with pressure at a lower temperature T{sub 0}, which rises with pressure. The critical pressure above which this phase appears decreases with doping going to zero for x = 0.24 just below the critical doping for the magnetic phase. This behaviour is reminiscent of the second magnetic phase appearing in Ba{sub 0.76}Na{sub 0.24}Fe{sub 2}As{sub 2} where the tetragonal symmetry is restored in favour of the scenario in which the nematic order in the iron pnictides is of magnetic origin.

  13. Non-stoichiometric nickel arsenides in nature: The structure of orcelite, Ni5−xAs2 (x = 0.25), from the Bon Accord oxide body, South Africa

    International Nuclear Information System (INIS)

    Bindi, Luca; Tredoux, Marian; Zaccarini, Federica; Miller, Duncan E.; Garuti, Giorgio

    2014-01-01

    Highlights: • The structure of natural orcelite has been solved for the first time. • The non-stoichiometry for orcelite previously reported was confirmed. • Non-stoichiometry could cause disorder phenomena during the crystal growth. - Abstract: The crystal structure of the mineral orcelite, a rare nickel arsenide reported in the literature with the formula Ni 5−x As 2 (with x = 0.23), was refined using intensity data collected from a crystal from the Bon Accord body, South Africa. This study revealed that the structure is hexagonal, space group P6 3 mc, with a = 6.7922(2), c = 12.4975(5) Å, and V = 499.31(3) Å 3 . The refinement of an anisotropic model led to an R index of 0.028 for 412 independent reflections. The orcelite structure can be described as a distorted variant of the Pd 5 Sb 2 structure. The smaller As atoms are in the centres of distorted tetragonal antiprisms, formed by only Ni atoms. The coordination sphere is completed with two additional Ni atoms opposite to the rectangular faces. Electron microprobe data carried out on the same crystal used for the structural study point to the following formula [on the basis of Σ(As + Fe + Sb)=2]: Ni 4.75 (As 1.93 Fe 0.05 Sb 0.02 ). According to the high-quality structure refinement, the minor elements were found to replace As in the structure. An atomic position for Ni was found to be partially occupied (75%), thus confirming the non-stoichiometry for the mineral orcelite previously reported in literature. Such a deviation from the stoichiometry could represent the driving force favouring disorder phenomena during the growth of the mineral

  14. Non-stoichiometric nickel arsenides in nature: The structure of orcelite, Ni{sub 5−x}As{sub 2} (x = 0.25), from the Bon Accord oxide body, South Africa

    Energy Technology Data Exchange (ETDEWEB)

    Bindi, Luca, E-mail: luca.bindi@unifi.it [Dipartimento di Scienze della Terra, Università degli Studi di Firenze, via La Pira 4, I-50121 Firenze (Italy); Tredoux, Marian [Department of Geology, University of the Free State, Bloemfontein 9300 (South Africa); Zaccarini, Federica [Department of Applied Geosciences and Geophysics, University of Leoben, Peter Tunner str. 5, A-8700 Leoben (Austria); Miller, Duncan E. [Department of Geology, University of the Free State, Bloemfontein 9300 (South Africa); Garuti, Giorgio [Department of Applied Geosciences and Geophysics, University of Leoben, Peter Tunner str. 5, A-8700 Leoben (Austria)

    2014-07-15

    Highlights: • The structure of natural orcelite has been solved for the first time. • The non-stoichiometry for orcelite previously reported was confirmed. • Non-stoichiometry could cause disorder phenomena during the crystal growth. - Abstract: The crystal structure of the mineral orcelite, a rare nickel arsenide reported in the literature with the formula Ni{sub 5−x}As{sub 2} (with x = 0.23), was refined using intensity data collected from a crystal from the Bon Accord body, South Africa. This study revealed that the structure is hexagonal, space group P6{sub 3}mc, with a = 6.7922(2), c = 12.4975(5) Å, and V = 499.31(3) Å{sup 3}. The refinement of an anisotropic model led to an R index of 0.028 for 412 independent reflections. The orcelite structure can be described as a distorted variant of the Pd{sub 5}Sb{sub 2} structure. The smaller As atoms are in the centres of distorted tetragonal antiprisms, formed by only Ni atoms. The coordination sphere is completed with two additional Ni atoms opposite to the rectangular faces. Electron microprobe data carried out on the same crystal used for the structural study point to the following formula [on the basis of Σ(As + Fe + Sb)=2]: Ni{sub 4.75}(As{sub 1.93}Fe{sub 0.05}Sb{sub 0.02}). According to the high-quality structure refinement, the minor elements were found to replace As in the structure. An atomic position for Ni was found to be partially occupied (75%), thus confirming the non-stoichiometry for the mineral orcelite previously reported in literature. Such a deviation from the stoichiometry could represent the driving force favouring disorder phenomena during the growth of the mineral.

  15. Experiments Using a Ground-Based Electrostatic Levitator and Numerical Modeling of Melt Convection for the Iron-Cobalt System in Support of Space Experiments

    Science.gov (United States)

    Lee, Jonghyun; SanSoucie, Michael P.

    2017-08-01

    Materials research is being conducted using an electromagnetic levitator installed in the International Space Station. Various metallic alloys were tested to elucidate unknown links among the structures, processes, and properties. To accomplish the mission of these space experiments, several ground-based activities have been carried out. This article presents some of our ground-based supporting experiments and numerical modeling efforts. Mass evaporation of Fe50Co50, one of flight compositions, was predicted numerically and validated by the tests using an electrostatic levitator (ESL). The density of various compositions within the Fe-Co system was measured with ESL. These results are being served as reference data for the space experiments. The convection inside a electromagnetically-levitated droplet was also modeled to predict the flow status, shear rate, and convection velocity under various process parameters, which is essential information for designing and analyzing the space experiments of some flight compositions influenced by convection.

  16. Neutron transmutation doping of gallium arsenide

    International Nuclear Information System (INIS)

    Alexiev, D.

    1987-12-01

    Neutron transmutation doping (NTD) was studied as a means of compensating p-type Cd-doped GaAs. By introducing specific donor concentrations, the net acceptor level was measured and showed a progressive reduction. The NTD constant K = 0.32 donor atoms.cm 3 per cm 2 was also measured. Radiation damage caused by neutron bombardment was annealed and no additional traps were generated

  17. DX centers in indium aluminum arsenide heterostructures

    Science.gov (United States)

    Sari, Huseyin

    DX centers are point defects observed in many n-type doped III-V compound semi conductors. They have unique properties, which include large differences between their optical and thermal ionization energies, and a temperature dependence of the capture cross-sections. As a result of these properties DX centers exhibit a reduction in free carrier concentration and a large persistent photoconductivity (PPC) effect. DX centers also lead to a shift in the threshold voltage of modulation doped field effect transistors (MODFET) structures, at low temperatures. Most of the studies on this defect have been carried out on the Ga xAl1-xAs material system. However, to date there is significantly less work on DX centers in InxAl1-xAs compounds. This is partly due to difficulties associated with the growth of defect free materials other than lattice matched In0.52Al 0.48As on InP and partly because the energy level of the DX center is in resonance with the conduction band in In0.52Al0.48As. The purpose of this dissertation is to extend the DX center investigation to InAlAs compounds, primarily in the indirect portion of the InAlAs bandgap. In this work the indium composition dependence of the DX centers in In xAl1-xAs/InyGa1-yAs-based heterostructure is studied experimentally. Different InxAl 1-xAs epitaxial layers with x = 0.10, x = 0.15, x = 0.20, and x = 0.34 in a MODFET-like heterostructure were grown by Molecular Beam Epitaxy (MBE) on (001) GaAs substrates. In order to compensate the lattice mismatch between epitaxial layers and their substrates, step-graded buffer layers with indium composition increments of x = 0.10, every 2000 A, were used. For the samples grown with different indium contents Hall measurements as a function of both temperature and different cooling biases were performed in order to determine their carrier concentrations. A self consistent Poisson-Schrodinger numerical software is used to model the heterostructures. With the help of this numerical model and the grand canonical ensemble (GCE) the energy levels of the DX centers relative to the conduction band edge were estimated. The optical properties of the DX centers were also investigated using a 1.0 mum thick, Si-doped bulk-like GaAlAs epitaxial layer grown by MBE on a GaAs substrate. A conductivity modulation experiment using a stripe-patterned mask has been performed at 77°K. A conductivity difference, up to 10 4 along parallel and perpendicular directions relative to the stripes, has been measured. The difference in conductivity is a result of the large PPC effect of the DX centers and clearly indicates the localized nature of these deep levels.

  18. Gallium arsenide detectors for minimum ionizing particles

    International Nuclear Information System (INIS)

    Beaumont, S.B.; Bertin, R.; Booth, C.N.; Buttar, C.; Capiluppi, C.; Carraresi, L.; Cindolo, F.; Colocci, M.; Combley, F.H.; D'Auria, S.; Del Papa, C.; Dogru, M.; Edwards, M.; Fiori, F.; Foster, F.; Francescato, A.; Gray, R.; Hill, G.; Hou, Y.; Houston, P.; Hughes, G.; Jones, B.K.; Lynch, J.G.; Lisowsky, B.; Matheson, J.; Nava, F.; Nuti, M.; O'Shea, V.; Pelfer, P.G.; Raine, C.; Santana, J.; Saunders, I.J.; Seller, P.H.; Shankar, K.; Sharp, P.H.; Skillicorn, I.O.; Sloan, T.; Smith, K.M.; Tartoni, N.; Ten Have, I.; Turnbull, R.M.; Vanni, U.; Vinattieri, A.; Zichichi, A.

    1993-01-01

    Progress on the development of GaAs solid state detectors is presented. 80% charge collection efficiency has been achieved, and double sided detectors with metal rectifying contacts have been tested. Measurements of capacitance and tests with SEM are giving more information on the behaviour of these devices. (orig.)

  19. Development of gallium arsenide gamma spectrometric detector

    International Nuclear Information System (INIS)

    Kobayashi, T.; Kuru, I.

    1975-03-01

    GaAs semiconductor material has been considered to be a suitable material for gamma-ray spectrometer operating at room temperature since it has a wid-band gap, larger than that of silicon and germanium. The basic objective of this work is to develop a GaAs gamma-ray spectrometric detector which could be used for gamma spectrometric measurement of uranium and plutonium in nuclear fuel safeguards. Liquid phase epitaxial techniques using iron (Fe) as dopant have been developed in making high purity GaAs crystals suitable for gamma-ray spectrometer operating at room temperature. Concentration of Fe in the epitaxial crystal was controlled by initial growth temperature. The best quality epitaxial crystal was obtained under the following conditions: starting temperature is about 800degC, the proportion of Fe to Ga solvent is 1 to 300. Carrier concentration of epitaxial crystals grown distributed in the ranges of 10 12 cm -3 to 10 14 cm -3 at room temperature. The thickness of the crystals ranged from 38 μm to 120 μm. Au-GaAs surface barrier detector was made of epitaxial crystal. Some of the detector were encapsulated in a can with a 50 μm Be window by welding a can to the detector holder. The detector with high energy resolution and good charge collecting characteristics was selected by alpha spectrometry at room temperature. Energy resolution of the detector for gamma-rays up to about 200 keV was very good at room temperature operation. The best energy resolutions taken with a GaAs detector were 3 keV (fwhm) and 3.8 keV for 241 Am 59.6 keV and 57 Co 122 keV, respectively, at room temperature. In order to study the applicability of the detector for nuclear safeguards, the measurements of 235 U gamma-ray spectrum have been carried out at room temperature. It was clarified that the gamma-ray spectrum of enriched U sample could be measured in high resolution with GaAs detector at room temperature, and that the content of 235 U in enriched U sources could be determined by measuring gamma-ray spectrum with GaAs detector. However, gamma-ray counting efficiency of the detector was not enough to built portable type instrument of gamma-ray spectrometer used for routine works of nuclear safeguards. In order to improve gamma-ray counting efficiency of the detector, double-epitaxial-layer detector has been studied. The preliminary results showed that the improvement of the detector gamma-ray counting efficiency was possible by using double-epitaxial-layer structure. It was also clarified that the good quality GaAs crystal was a key to obtaining a low noise, good charge collection detector

  20. Selenium implantation in epitaxial gallium arsenide layers

    International Nuclear Information System (INIS)

    Inada, T.; Tokunaga, K.; Taka, S.; Yuge, Y.; Kohzu, H.

    1981-01-01

    Selenium implantation at room temperature in S-doped epitaxial GaAs layers as a means of the formation of n + layers has been investigated. Doping profiles for Se-implanted layers have been examined by a C-V technique and/or a differential Hall effect method. It has been shown that n + layers with a maximum carrier concentration of approx. equal to1.5 x 10 18 cm -3 can be formed by implantation followed by a 15 min annealing at 950 0 C. Contact resistance of ohmic electrodes is reduced by use of the Se-implanted n + layers, resulting in the improvement on GaAs FET performance. Measured minimum noise figure of the Se-implanted GaAs FETs is 0.74 dB at 4 GHz. (orig.)

  1. Gallium Arsenide and Related Compounds, 1986.

    Science.gov (United States)

    1986-01-01

    F-Yiuang, WL,, PK Rhattacharva, UDas, A Chin , IJlackson and D L Persechini 417 -422 High quality lattice matched lnGaAs/InP heterostructures prepared...Sci. Technol. B3 1162. Schwartz G. P. 1983 Thin solid Films 103 3. Spicer W. E., Lindau I., Skeath P. R., Su C Y. and Chye P. W. 19R0 Phys. Rev. Lett... Chin R, Nakano K, and Milano R A 1981 IEEE J. Quantum Electron. QEJJ7, 275. Murgatroyd I J, Norman A G, and Booker G R 1986 Phys. Rev. Lett

  2. Narrowing the gap: from semiconductor to semimetal in the homologous series of rare-earth zinc arsenides RE(2-y)Zn4As4·n(REAs) and Mn-substituted derivatives RE(2-y)Mn(x)Zn(4-x)As4·n(REAs) (RE = La-Nd, Sm, Gd).

    Science.gov (United States)

    Lin, Xinsong; Tabassum, Danisa; Mar, Arthur

    2015-12-14

    A homologous series of ternary rare-earth zinc arsenides, prepared by reactions of the elements at 750 °C, has been identified with the formula RE(2-y)Zn4As4·n(REAs) (n = 2, 3, 4) for various RE members. They adopt trigonal structures: RE(4-y)Zn4As6 (RE = La-Nd), space group R3̄m1, Z = 3; RE(5-y)Zn4As7 (RE = Pr, Nd, Sm, Gd), space group P3̄m1, Z = 1; RE(6-y)Zn4As8 (RE = La-Nd, Sm, Gd), space group R3̄m1, Z = 3. The Zn atoms can be partially substituted by Mn atoms, resulting in quaternary derivatives RE(2-y)Mn(x)Zn(4-x)As4·n(REAs). Single-crystal structures were determined for nine ternary and quaternary arsenides RE(2-y)M4As4·n(REAs) (M = Mn, Zn) as representative examples of these series. The structures are built by stacking close-packed nets of As atoms, sometimes in very long sequences, with RE atoms occupying octahedral sites and M atoms occupying tetrahedral sites, resulting in an intergrowth of [REAs] and [M2As2] slabs. The recurring feature of all members of the homologous series is a sandwich of [M2As2]-[REAs]-[M2As2] slabs, while rocksalt-type blocks of [REAs] increase in thickness between these sandwiches with higher n. Similar to the previously known related homologous series REM(2-x)As2·n(REAs) which is deficient in M, this new series RE(2-y)M4As4·n(REAs) exhibits deficiencies in RE to reduce the electron excess that would be present in the fully stoichiometric formulas. Enthalpic and entropic factors are considered to account for the differences in site deficiencies in these two homologous series. Band structure calculations indicate that the semiconducting behaviour of the parent n = 0 member (with CaAl2Si2-type structure) gradually evolves, through a narrowing of the gap between valence and conduction bands, to semimetallic behaviour as the number of [REAs] blocks increases, to the limit of n = ∞ for rocksalt-type REAs.

  3. Characterizing and engineering tunable spin functionality inside indium arsenide/gallium arsenide quantum dot molecules

    Science.gov (United States)

    Liu, Weiwen

    The continual downsizing of the basic functional units used in the electronics industry has motivated the study of the quantum computation and related topics. To overcome the limitations of classical physics and engineering, some unique quantum mechanical features, especially entanglement and superpositions have begun to be considered as important properties for future bits. Including these quantum mechanical features is attractive because the ability to utilize quantum mechanics can dramatically enhance computational power. Among the various ways of constructing the basic building blocks for quantum computation, we are particularly interested in using spins inside epitaxially grown InAs/GaAs quantum dot molecules as quantum bits (qubits). The ability to design and engineer nanostructures with tailored quantum properties is critical to engineering quantum computers and other novel electro-optical devices and is one of the key challenges for scaling up new ideas for device application. In this thesis, we will focus on how the structure and composition of quantum dot molecules can be used to control spin properties and charge interactions. Tunable spin and charge properties can enable new, more scalable, methods of initializing and manipulating quantum information. In this thesis, we demonstrate one method to enable electric-field tunability of Zeeman splitting for a single electron spin inside a quantum dot molecules by using heterostructure engineering techniques to modify the barrier that separates quantum dots. We describe how these structural changes to the quantum dot molecules also change charge interactions and propose ways to use this effect to enable accurate measurement of coulomb interactions and possibly charge occupancy inside these complicated quantum dot molecules.

  4. Clinical evaluation of dentin hypersensitivity treatment with the low intensity Gallium-Aluminum-Arsenide laser - AsGaAl Avaliação clínica do tratamento da hiperestesia dentinária com laser de baixa potência de Arseniato de Gálio-Alumínio - AsGaAl

    Directory of Open Access Journals (Sweden)

    Luciana Chucre Gentile

    2004-12-01

    Full Text Available The dentin hypersensitivity is a painful condition rather prevalent in the general population. There are several ways of treatment for such condition, including the low intensity lasers. The proposal of this study was to verify the effectiveness of the Gallium-Aluminum-Arsenide diode laser in the treatment of this painful condition, using a placebo as control. MATERIALS AND METHODS: Thirty-two patients were selected, 22 females and 10 males, with ages ranging from 20 to 52 years old. The 32 patients were randomly distributed into two groups, treated and control; the sample consisted of 68 teeth, 35 in the treated group and 33 in the control group. The treated group was exposed to six laser applications with intervals from 48 to 72 hours, and the control group received, as placebo, applications of a curing light. RESULTS: A significant reduction was observed in the pain condition between the initial phase and after six laser applications; however, such reduction could also be observed for the control group exposed to the placebo. CONCLUSION: Therapy with the low intensity Gallium-Aluminum-Arsenide laser - AsGaAl induces a statistically significant reduction in the painful condition after each application and between the beginning and end of treatment, although there was no statistically significant difference between the treated group (laser and the control group (placebo at the end of treatment and after the mediate evaluation results (after 6 weeks, this way impairing the real measurement of laser effectiveness and placebo effect.A hiperestesia dentinária trata-se de uma condição dolorosa bastante prevalente nas populações mundiais. Várias são as modalidades de tratamento para tal condição, entre elas, os lasers de baixa potência. A proposta deste estudo foi a de verificar a efetividade do laser de diodo de Arseniato de Gálio-Alumínio no tratamento desta condição dolorosa, utilizando-se um placebo como controle. MATERIAIS E M

  5. Chemical Synthesis of alpha-Iron Cobalt and Metastable gamma-Iron Nickel Magnetic Nanoparticles with Tunable Magnetic Properties for Study of RF Heating and Magnetomechanical Responses in Polymeric Systems

    Science.gov (United States)

    McNerny, Katie L.

    The successful development of functionalized magnetic nanoparticles (MNPs) is necessary for a variety of biomedical applications including magnetic tagging of cells, bioseparation, cell sorting, cell tracking, targeted drug delivery, thermablative cancer therapies, diagnostics and sensing applications. For effective performance in many of these applications, the MNPs must be stable at various temperatures and chemical environments while also being easily dispersed in a variety of media. Chemical synthesis techniques have been developed to achieve desirable shapes, sizes and compositions of Fe-Co, Fe-Ni, as well as other Fe-based ternary alloy MNPs. These MNPs have been functionalized with surfactants, polymers, and antibodies for suspension in aqueous fluids that can be delivered intravenously to a desired location in the body and subsequently manipulated by alternating (AC) and direct (DC) magnetic fields. An exciting application for the gamma-FeNi MNPs that will be investigated is self-regulated heating of cancer tissue. Cancerous tissue is known to be more thermally sensitive than healthy tissue due to irregularities in tumor vasculature, and therefore MNPs can be used to heat and kill these cells while leaving healthy tissue unharmed. gamma-FeNi MNPs have tunable Curie temperatures (TC's) and can be further adjusted by the addition of an antiferromagnetic element such as Mn or Cr to reach temperatures required for killing cancer cells (between 40 and 50°C). The TC acts as an upper limit to heating as the material switches from being ferromagnetic to paramagnetic. These MNPs have been synthesized and characterized, and a model for self-regulated heating has been demonstrated. The vision for this project is to eventually functionalize the particles with a tumor-specific tag, for instance Herceptin, and to potentially attach a chemotherapeutic agent to the MNPs for combined heating and drug delivery. Transmission electron microscopy (TEM) has been used to show that dilute ferrofluids (or magnetic fluids) composed of either gamma-FeNi or alpha-FeCo monodisperse MNPs spontaneously aggregate into chain configurations, which have unknown heating capabilities and important implications for magnetomechanical responses. These chain configurations have been examined through small angle neutron scattering (SANS). The chaining of MNPs is also important for the potential deformation of extracellular matrix (ECM) tissue scaffold materials in vivo. This thesis will show that MNPs can be functionalized with a collagen-antibody and attched to ECM scaffolds. Tissue specificity and binding affinity of functionalized nanoparticles will be presented along with results confirming the usefulness of these particles as contrast agents for magnetic resonance imaging (MRI). These results have implications for using functionalized MNPs in the future for heart valve and Achilles tendon repair, in situ non-contact strain measurement of implants, as well as temporal and spatial tracking of degradation products from scaffolds after implantation using MRI or alternating gradient field magnetometers. A final part of this thesis will examine how MNPs decorate Pluronic polymer liquid crystals so that we can probe the structural features of these nanocomposites and study the strain that results upon application of an external magnetic field gradient for comparison to scaffold-based ferrogel materials.

  6. Radiation annealing of gallium arsenide implanted with sulphur

    CERN Document Server

    Ardyshev, V M

    2002-01-01

    Sulfur ions were implanted in a semi-insulating GaAs. Photon annealing (805 deg C/(10-12) s) and the thermal one (800 deg C/30 min) were conducted under SiO sub 2 -films coating obtained by different ways. Contents of GaAs components in films were determined from Rutherford backscattering spectra; concentration profiles of electrons were measured by the voltage-capacitance method. Diffusion of sulfur was shown to go in two directions - to the surface and into bulk of GaAs. The first process was induced by vacancies that had been formed near the surface of semiconductors during the dielectric coating. The coefficient of the bulk-diffusion and diffusion-to-surface of sulfur ions under photon annealing was twice as much as that under thermal one. The doping efficiency was also larger

  7. Supralinear photoconductivity of copper doped semi-insulating gallium arsenide

    Science.gov (United States)

    Schoenbach, K. H.; Joshi, R. P.; Peterkin, F.; Druce, R. L.

    1995-05-01

    The high gain effect was shown to be a threshold effect and was dependent on the photoactivation energy level. For the studied material, laser energy densities in the order of 10 mJ cm(sup - 2) for a laser pulse duration of 200 ps were needed to switch into the high gain mode. The observed supralinear behavior of the peak photoconductivity and the charge carrier lifetime can be accounted by the shifts in quasi Fermi levels and the occupancy of copper states within the forbidden gap. Numerical simulations were also presented that yielded quantitative values for the trapping cross sections and recombination center densities. From the perspective of applications, the GaAs:Si:Cu material had great potential for high-power repetitive switching and photodetection.

  8. Supralinear photoconductivity of copper doped semi-insulating gallium arsenide

    Energy Technology Data Exchange (ETDEWEB)

    Schoenbach, K.H.; Joshi, R.P.; Peterkin, F. [Physical Electronics Research Institute, Old Dominion University, Norfolk, Virginia 23529 (United States); Druce, R.L. [Lawrence Livermore National Laboratory, Livermore, California 94550 (United States)

    1995-05-15

    We report on the intensity dependent supralinear photoconductivity in GaAs:Si:Cu material. The results of our measurements show that the effective carrier lifetime can change over two orders of magnitude with variations in the intensity of the optical excitation. A threshold intensity level has been observed and can be related to the occupancy of the deep copper level. Numerical simulations have also been carried out to analyze the trapping dynamics. The intensity dependent lifetimes obtained from the simulations match the experimental data very well. Finally, based on the nonlinear intensity dependence of the effective lifetimes, a possible low-energy phototransistor application for the GaAs:Cu material system is presented. {copyright} {ital 1995} {ital American} {ital Institute} {ital of} {ital Physics}.

  9. First principles calculation of two dimensional antimony and antimony arsenide

    Energy Technology Data Exchange (ETDEWEB)

    Pillai, Sharad Babu, E-mail: sbpillai001@gmail.com; Narayan, Som; Jha, Prafulla K. [Department. of Physics, Faculty of Science, The M. S. University of Baroda, Vadodara-390002 (India); Dabhi, Shweta D. [Department of Physics, Maharaja Krishnakumarsinhji Bhavnagar University, Bhavnagar-364001 (India)

    2016-05-23

    This work focuses on the strain dependence of the electronic properties of two dimensional antimony (Sb) material and its alloy with As (SbAs) using density functional theory based first principles calculations. Both systems show indirect bandgap semiconducting character which can be transformed into a direct bandgap material with the application of relatively small strain.

  10. Temperature dependence of the two photon absorption in indium arsenide

    International Nuclear Information System (INIS)

    Berryman, K.W.; Rella, C.W.

    1995-01-01

    Nonlinear optical processes in semiconductors have long been a source of interesting physics. Two photon absorption (TPA) is one such process, in which two photons provide the energy for the creation of an electron-hole pair. Researchers at other FEL centers have studied room temperature TPA in InSb, InAs, and HgCdTe. Working at the Stanford Picosecond FEL Center, we have extended and refined this work by measuring the temperature dependence of the TPA coefficient in InAs over the range from 80 to 350 K at four wavelengths: 4.5, 5.06, 6.01, and 6.3 microns. The measurements validate the functional dependence of recent band structure calculations with enough precision to discriminate parabolic from non-parabolic models, and to begin to observe smaller effects, such as contributions due to the split-off band. These experiments therefore serve as a strong independent test of the Kane band theory, as well as providing a starting point for detailed observations of other nonlinear absorption mechanisms

  11. Optical verification of the valence band structure of cadmium arsenide

    NARCIS (Netherlands)

    Gelten, M.J.; Es, van C.M.; Blom, F.A.P.; Jongeneelen, J.W.F.

    1980-01-01

    Optical absorption measurements were performed on thin single crystalline samples of Cd3As2 at temperatures of 300 K and 10 K. At low temperature the interband absorption coefficient shows clearly two steps due to direct transitions from the heavy hole and light hole valence bands to the conduction

  12. Shallow doping of gallium arsenide by recoil implantation

    International Nuclear Information System (INIS)

    Sadana, D.K.; Souza, J.P. de; Rutz, R.F.; Cardone, F.; Norcott, M.H.

    1989-01-01

    Si atoms were recoil-implanted into GaAs by bombarding neutral (As + ) or dopant (Si + ) ions through a thin Si cap. The bombarded samples were subsequently rapid thermally or furnace annealed at 815-1000 degree C in Ar or arsine ambient. The presence of the recoiled Si in GaAs and resulting n + -doping was confirmed by secondary ion mass spectrometry and Hall measurements. It was found that sheet resistance of 19 cm 3 and the annealing temperature was > 850 degree C. The present electrical data show that the recoil implant method is a viable alternative to direct shallow implant for n + doping of GaAs. 7 refs., 3 figs., 1 tab

  13. Electrical properties of gallium arsenide irradiated with electrons and neutrons

    International Nuclear Information System (INIS)

    Kol'chenko, T.I.; Lomako, V.M.

    1975-01-01

    A study was made of changes in the electrical properties of GaAs doped with Te, S, Se, Si, Ge, Sn (n 0 approximately 10 16 -10 18 cm -3 ) and irradiated either with 2.5-28 MeV electrons or with fast reactor neutrons. An analysis of changes in the electron density indicated that the rate of carrier removal by electron bombardment was independent of the dopant but was governed by isolated radiation defects. The change in the mobility due to irradiation with 2.5-10 MeV electrons was also governed by isolated defects. When the electron energy was increased to 28 MeV the main contribution to the change in the mobility was made by defect clusters. In the neutron-irradiation case the changes in the carrier density and mobility were mainly due to defect clusters and the nature of changes in the electrical properties was again independent of the dopant

  14. Nanoscale characterisation of electronic and spintronic nitrides and arsenides

    International Nuclear Information System (INIS)

    Fay, M W; Han, Y; Edmonds, K W; Wang, K; Campion, R P; Gallagher, B L; Foxon, C T; Hilton, K P; Masterton, A; Wallis, D; Balmer, R S; Uren, M J; Martin, T; Brown, P D

    2006-01-01

    The limits of applicability of the nanoscale spatial resolution analysis techniques of EFTEM, CBED and dark field imaging as applied to ohmic contacts to AlGaN/GaN and Mn distribution within Ga 1-x Mn x As epilayers are considered. EFTEM can be limited by acquisition times necessitating the post processing of images to compensate for sample drift. Complementary technique of assessment are required to address problems of peak overlaps in energy loss spectra or signal to noise problems for low elemental concentrations. The use of 002 dark field imaging to appraise Ga 1-x Mn x As epilayers is demonstrated

  15. Ultrafast Time-Resolved Photoluminescence Studies of Gallium-Arsenide

    Science.gov (United States)

    Johnson, Matthew Bruce

    This thesis concerns the study of ultrafast phenomena in GaAs using time-resolved photoluminescence (PL). The thesis consists of five chapters. Chapter one is an introduction, which discusses the study of ultrafast phenomena in semiconductors. Chapter two is a description of the colliding-pulse mode-locked (CPM) ring dye laser, which is at the heart of the experimental apparatus used in this thesis. Chapter three presents a detailed experimental and theoretical investigation of photoluminescence excitation correlation spectroscopy (PECS), the novel technique which is used to time-resolve ultrafast PL phenomena. Chapters 4 and 5 discuss two applications of the PECS technique. In Chapter 4 the variation of PL intensity in In-alloyed GaAs substrate material is studied, while Chapter 5 discusses the variation of carrier lifetimes in ion-damaged GaAs used in photo-conductive circuit elements (PCEs). PECS is a pulse-probe technique that measures the cross correlation of photo-excited carrier populations. The theoretical model employed in this thesis is based upon the rate equation for a simple three-level system consisting of valence and conduction bands and a single trap level. In the limit of radiative band-to-band dominated recombination, no PECS signal should be observed; while in the capture -dominated recombination limit, the PECS signal from the band-to-band PL measures the cross correlation of the excited electron and hole populations and thus, the electron and hole lifetimes. PECS is experimentally investigated using a case study of PL in semi-insulating (SI) GaAs and In -alloyed GaAs. At 77 K, the PECS signal is characteristic of a capture-dominated system, yielding an electron-hole lifetime of about 200 ps. However, at 5 K the behavior is more complicated and shows saturation effects due to the C acceptor level, which is un-ionized at 5 K. As a first application, PECS is used to investigate the large band-to-band PL contrast observed near dislocations in In-alloyed GaAs. It is found that the PL intensity contrast between bright and dark areas correlates with the ratio of the lifetimes measured using PECS in these areas. Thus, the PL intensity contrast is due to the difference in the carrier lifetimes in the different regions. The carrier lifetimes in the bright and dark regions have different temperature dependences. (Abstract shortened with permission of author.).

  16. Experimental studies on the photoemission of gallium arsenide crystals

    International Nuclear Information System (INIS)

    Westermann, M.

    2003-04-01

    In this thesis the study influence of residual gases on the lifetime, the temperature dependence of the quantum yield, and the influence of activation with potassium on both effects for GaAs-photocathodes is described. (HSI)

  17. Indium arsenide-on-SOI MOSFETs with extreme lattice mismatch

    Science.gov (United States)

    Wu, Bin

    Both molecular beam epitaxy (MBE) and metal organic chemical vapor deposition (MOCVD) have been used to explore the growth of InAs on Si. Despite 11.6% lattice mismatch, planar InAs structures have been observed by scanning electron microscopy (SEM) when nucleating using MBE on patterned submicron Si-on-insulator (SOI) islands. Planar structures of size as large as 500 x 500 nm 2 and lines of width 200 nm and length a few microns have been observed. MOCVD growth of InAs also generates single grain structures on Si islands when the size is reduced to 100 x 100 nm2. By choosing SOI as the growth template, selective growth is enabled by MOCVD. Post-growth pattern-then-anneal process, in which MOCVD InAs is deposited onto unpatterned SOI followed with patterning and annealing of InAs-on-Si structure, is found to change the relative lattice parameters of encapsulated 17/5 nm InAs/Si island. Observed from transmission electron diffraction (TED) patterns, the lattice mismatch of 17/5 nm InAs/Si island reduces from 11.2 to 4.2% after being annealed at 800°C for 30 minutes. High-k Al2O3 dielectrics have been deposited by both electron-beam-enabled physical vapor deposition (PVD) and atomic layer deposition (ALD). Films from both techniques show leakage currents on the order of 10-9A/cm2, at ˜1 MV/cm electric field, breakdown field > ˜6 MV/cm, and dielectric constant > 6, comparable to those of reported ALD prior arts by Groner. The first MOSFETs with extreme lattice mismatch InAs-on-SOI channels using PVD Al2O3 as the gate dielectric are characterized. Channel recess was used to improve the gate control of the drain current.

  18. Sources of spontaneous emission based on indium arsenide

    International Nuclear Information System (INIS)

    Zotova, N. V.; Il'inskaya, N. D.; Karandashev, S. A.; Matveev, B. A.; Remennyi, M. A.; Stus', N. M.

    2008-01-01

    The results obtained for light-emitting diodes based on heterostructures that contain InAs in the active region and are grown by the methods of liquid-phase, molecular-beam, and vapor-phase epitaxy from organometallic compounds are reviewed. The emission intensity, the near-field patterns, and the light-current and current-voltage characteristics of light-emitting diodes that have flip-chip structure or feature a point contact are analyzed.

  19. Sources of spontaneous emission based on indium arsenide

    Energy Technology Data Exchange (ETDEWEB)

    Zotova, N V; Il' inskaya, N D; Karandashev, S A; Matveev, B. A., E-mail: bmat@iropt3.ioffe.rssi.ru; Remennyi, M A; Stus' , N M [Russian Academy of Sciences, Ioffe Physicotechnical Institute (Russian Federation)

    2008-06-15

    The results obtained for light-emitting diodes based on heterostructures that contain InAs in the active region and are grown by the methods of liquid-phase, molecular-beam, and vapor-phase epitaxy from organometallic compounds are reviewed. The emission intensity, the near-field patterns, and the light-current and current-voltage characteristics of light-emitting diodes that have flip-chip structure or feature a point contact are analyzed.

  20. Superlattice Intermediate Band Solar Cell on Gallium Arsenide

    Science.gov (United States)

    2015-02-09

    13  Figure 11. (a) Contour plot of device EOL efficiency as a function of emitter and i-region thickness for a 1MeV electron...fluence dose of 2x1015cm-2 (b) EOL I-V characteristic of the device...expanded our simulations to include the effect of radiation degradation to assess the end of life ( EOL ) efficiencies of these devices in space. Figure 10

  1. Electrodeposition of epitaxial CdSe on (111) gallium arsenide

    Energy Technology Data Exchange (ETDEWEB)

    Cachet, H.; Cortes, R.; Froment, M. [Universite Pierre et Marie Curie, Paris (France). Phys. des Liquides et Electrochimie; Etcheberry, A. [Institut Lavoisier (IREM) UMR CNRS C0173, Universite de Versailles- St Quentin en Yvelynes, 45 Avenue des Etats Unis, 78035, Versailles (France)

    2000-02-21

    Epitaxial growth of CdSe has been achieved on GaAs(111) by electrodeposition from an aqueous electrolyte. The structure of the film corresponds to the cubic modification of CdSe. The quality of epitaxy has been investigated by reflection high energy electron diffraction, transmission electron microscopy and X-ray diffraction techniques. By XPS measurements the chemistry of the CdSe/GaAs interface and the composition of CdSe are determined. (orig.)

  2. Temperature dependence of electron concentration in cadmium arsenide

    NARCIS (Netherlands)

    Gelten, M.J.; Blom, F.A.P.

    1979-01-01

    From measurements of the temperature dependence of the electron concentration in Cd 3 As 2 , we found values for the conduction-band parameters that are in good agreement with those recently reported by Aubin, Caron, and Jay-Gerin. However, in contrast with these authors we found no small overlap,

  3. Multifunctional homojunction gallium arsenide n–p–m-structure

    Directory of Open Access Journals (Sweden)

    Karimov A. V.

    2009-11-01

    Full Text Available The brief information about created phototransistor nGaAs–рGaAs–Ag-structure are given. The processes of photogeneration of carriers in the base and in the space-charge layers of semiconductor junction as well as of metal — semiconductor junction are analyzed depending on the mode of inclusion. It is shown the multifunctionality of offered homojunction structure that is perspective for creating the optical receiver or the optical transformer.

  4. Electron transport in erbium arsenide:indium gallium(aluminum)arsenide metal/semiconductor nanocomposites for thermoelectric power generation

    Science.gov (United States)

    Bahk, Je-Hyeong

    Electron transport in thin film ErAs:InGa(Al)As metal/semiconductor nanocomposite materials grown by molecular beam epitaxy is investigated experimentally and theoretically for efficient thermoelectric power generation. Thermoelectric properties such as the Seebeck coefficient, the electrical conductivity, and the thermal conductivity are measured for the various compositions of the material up to 840 K. A special sample preparation method is proposed to protect the thin films from damage and/or decomposition, and prevent the parasitic substrate conduction effect during the high temperature measurements. The sample preparation method includes surface passivation, high temperature metallization with a diffusion barrier, and the covalent oxide bonding technique for substrate removal. The experimental results for the nanocomposite materials are analyzed using the Boltzmann transport equation under the relaxation time approximation. The scattering characteristics of free electrons in the InGa(Al)As is defined by four major scattering mechanisms such as the polar optical phonon scattering, the ionized impurity scattering, the alloy scattering, and the acoustic phonon deformation potential scattering. Combining these scattering mechanisms, the electron transport model successfully fits the temperature-dependent thermoelectric properties of Si-doped InGaAlAs materials, and predicts the figure of merits at various doping levels in various Al compositions. The nanoparticle-electron interaction is modeled as a momentum scattering for free electrons caused by the electrostatic potential perturbation around nanoparticles and the band offset at the interface. The ErAs nanoparticles are assumed to be semi-metals that can donate electrons to the matrix, and positively charged after the charge transfer to build up the screened coulomb potential outside them. The nanoparticle scattering rate is calculated for this potential profile using the partial wave method, and used to analyze the enhancement of the Seebeck coefficient. Finally, the experimental results for the various compositions of the ErAs:InGa(Al)As nanocomposites are fit using the electron transport model and the nanoparticle scattering. It is shown that nanoparticle scattering can enhance the power factor via energy-dependent electron scattering in ErAs:InGaAs system. The figure of merit for the 0.6% ErAs:(InGaAs)0.8(InAlAs) 0.2 lattice matched to InP is measured to be 1.3 at 800 K, and the theory predicts that it can reach 1.9 at 1000 K.

  5. Doped Aluminum Gallium Arsenide (AlGaAs)/Gallium Arsenide (GaAs) Photoconductive Semiconductor Switch (PCSS) Fabrication

    Science.gov (United States)

    2016-09-27

    it as-grown and it densifies as the H leaves when annealed above approximately 500 °C. This densification causes the film to contract, becoming...tensile. The final deposition recipe shown in the Appendix, Section 2 was found after numerous trials and results in a minimum between compressive...marks b) ULVAC etch: 500 -W ICP, 50-W RIE, 4 mT, 16-sccm BCl3, 4-sccm Ar, 12 s (~50 nm)  GaAs etches at 7.54 nm/s after 6-s etch delay. PR etches at

  6. Efeito da terapia com laser de arsenieto de gálio e alumínio (660Nm sobre a recuperação do nervo ciático de ratos após lesão por neurotmese seguida de anastomose epineural: análise funcional Effect of gallium-aluminum-arsenide laser therapy (660Nm on recovery of the sciatic nerve in rats following neurotmesis lesion and epineural anastomosis: functional analysis

    Directory of Open Access Journals (Sweden)

    FA Reis

    2008-06-01

    Full Text Available CONTEXTUALIZAÇÃO: As lesões nervosas periféricas podem comprometer atividades diárias de um indivíduo e resultam em perda da sensibilidade e motricidade do território inervado. OBJETIVO: Com o intuito de acelerar os processos regenerativos, objetivou-se analisar a influência da aplicação do laser de arsenieto de gálio e alumínio (AsGaAl, 660Nm sobre a recuperação funcional do nervo ciático de ratos. MATERIAIS E MÉTODOS: O nervo ciático de 12 ratos Wistar foi submetido à lesão por neurotmese e anastomose epineural e divididos em dois grupos: controle e laserterapia. Após a lesão, utilizou-se o laser de GaAlAs, 660Nm, 4J/cm², 26,3mW, feixe de 0,63cm², em três pontos eqüidistantes sobre a lesão, por 20 dias. As impressões das pegadas dos animais foram obtidas antes e após (sete, 14 e 21 dias pós-operatórios o procedimento cirúrgico e calculou-se o índice funcional do ciático (IFC. RESULTADOS: A comparação do IFC não resultou em diferença significante (p>0,05 entre os grupos. CONCLUSÕES: Conclui-se que os parâmetros e métodos empregados na laserterapia demonstram resultados nulos sobre o IFC no período avaliado.CONTEXT: Peripheral nerve injuries result in sensory and motor losses in the innervated area and can hinder individuals’ daily activities. Objective: The objective was to analyze the influence of applying gallium-aluminum-arsenide (GaAlAs laser (660Nm on the functional recovery of the sciatic nerve in rats. METHODS: The sciatic nerve of 12 Wistar rats was subjected to injury consisting of neurotmesis and epineural anastomosis. The rats were divided into two groups: control and laser therapy. After the injury, a GaAlAs laser was used (660Nm, 4J/cm², 26.3mW and 0.63cm² beam at three equidistant points on the injury, for 20 days. Footprint impressions were obtained from the animals before and seven, 14 and 21 days after the surgical procedure and the sciatic functional index (SFI was calculated

  7. Short period strain balanced gallium arsenide nitride/indium arsenide nitride superlattice lattice matched to indium phosphide for mid-infrared photovoltaics

    Science.gov (United States)

    Bhusal, Lekhnath

    Dilute nitrogen-containing III-V-N alloys have been intensively studied for their unusual electronic and optical behavior in the presence of a small amount of nitrogen. Those behaviors can further be manipulated, with a careful consideration of the strain and strain balancing, for example, in the context of a strain-balanced superlattice (SL) based on those alloys. In this work, the k.p approximation and the band anti-crossing model modified for the strain have been used to describe the electronic states of the strained bulk-like GaAs1-xNx and InAs 1-yNy ternaries in the vicinity of the center of the Brillouin zone (Gamma-point). Band-offsets between the conduction and valence bands of GaAs1-xNx and InAs1-yN y have also been evaluated, before implementing them into the SL structure. By minimizing the total mechanical energy of the stack of the alternating layers of GaAs1-xNx and InAs1-yNy in the SL, the ratio of the thicknesses of the epilayers is determined to make the structure lattice-matching on the InP(001), through the strain-balancing. Mini-band energies of the strain-balanced GaAs1-xNx/InAs 1-yNy short-period SL on InP(001) is then investigated using the transfer matrix formalism. This enabled identifying the evolution of the band edge transition energies of the superlattice structure for different nitrogen compositions. Results show the potential of the new proposed design to exceed the existing limits of bulk-like InGaAsN alloys and offer the applications for photon absorption/emission energies in the range of ~0.65-0.35eV at 300K for a typical nitrogen composition of ≤5%. The optical absorption coefficient of such a SL is then estimated under the anisotropic medium approximation, where the optical absorption of the bulk structure is modified according to the anisotropy imposed by the periodic potential in the growth direction. As an application, the developed SL structure is used to investigate the performance of double, triple and quadruple junction thermophotovoltaic devices. Integration of the SL structure, which is lattice matched to InP, in the i region of the p(InGaAs)- i(SL) n(InGaAs) diode allowed the possibility of more than two junction thermophotovoltiac device with the enhanced performance in comparison to the conventional p(InGaAs)n(InGaAs) diode.

  8. Design of Indium Arsenide nanowire sensors for pH and biological sensing and low temperature transport through p-doped Indium Arsenide nanowires

    DEFF Research Database (Denmark)

    Upadhyay, Shivendra

    With the goal of real time electrical detection of chemical and biological species, nanowires have shown great promise with high sensitivity due to their large surface to volume ratio. While the focus of such electrical detection has shifted to one dimensional semiconductor nanostuctures, Silicon...

  9. Multiband Gutzwiller theory of the band magnetism of LaO iron arsenide; Multiband Gutzwiller-Theorie des Bandmagnetismus von LaO-Eisen-Arsenid

    Energy Technology Data Exchange (ETDEWEB)

    Schickling, Tobias

    2012-02-23

    In this work we apply the Gutzwiller theory for various models for LaOFeAs. It was discovered in 2008 that doped LaOFeAs is superconducting below a temperature of T{sub c} = 28 K. Soon after that discovery, more iron based materials were found which have an atomic structure that is similar to the one of LaOFeAs and which are also superconducting. These materials form the class of iron-based superconductors. Many properties of this material class are in astonishing agreement with the properties of the cuprates. Therefore, studying this new material may promote our understanding of high-T{sub c} superconductivity. Despite great efforts, however, Density Functional Theory calculations cannot reproduce the small magnetic moment in the ground state of undoped LaOFeAs. Such calculations overestimate the magnetic moment by a factor 2-3. Within our Gutzwiller approach, we take additional local Coulomb correlations into account. We show that it is necessary to work with the iron 3d-orbitals and the arsenic 4p-orbitals to obtain a realistic description of LaOFeAs. For a broad parameter regime of the electronic interactions, we find a magnetic moment that is in the region of the experimentally observed values. We claim that the magnetic phase in LaOFeAs can be described as a spin-density wave of Landau-Gutzwiller quasi-particles.

  10. The internal strain parameter of gallium arsenide measured by energy-dispersive X-ray diffraction

    International Nuclear Information System (INIS)

    Cousins, C.S.G.; Sheldon, B.J.; Webster, G.E.; Gerward, L.; Selsmark, B.; Staun Olsen, J.

    1989-01-01

    The internal strain parameter of GaAs has been measured by observing the stress-dependence of the integrated intensity of the weak 006 reflection, with the compressive stress along the [1anti 10] axis. An energy-dispersive technique was employed so that the reflection could be obtained at a photon energy close to the minimum in the structure factor, thereby approaching closely the strictly-forbidden condition that applies at any energy in the diamond structure. A value anti A=-0.138±0.005, equivalent to a bond-bending parameter ζ=0.55=0.02, has been found. This is in good agreement with recent theoretical calculations and indirect determinations related to the bandstructure of GaAs. (orig.)

  11. Far-infrared reflection-absorption spectroscopy of amorphous and polycrystalline gallium arsenide films

    International Nuclear Information System (INIS)

    Gregory, J.R.

    1992-01-01

    We have reported far-infrared reflection absorption spectra (30-320CM -1 ) at 30 and 310K for nine films of non-stoichiometric GaAs. The FIRRAS measurements were performed using the grazing incidence FIR double-modulation spectroscopy technique first described by DaCosta and Coleman. The films were fabricated by molecular beam deposition on metallized substrates for two As/Ga molecular beam flux ratios. The films were characterized by depth profilometry, IRAS, XRD, and x-ray microprobe analysis. Film thicknesses ranged from 800 to 5800 angstrom and compositions were 45-50% As for a MB flux ratio of 0.29 and 60-70% As for a ratio of 1.12. FIRRAS measurements were made and characterizations performed for as-deposited films and for 5 hour anneals at 473, 573, 673 and 723 degrees C. Vibrational spectra of the crystallized films were interpreted in terms of the exact reflectivity of a thin dielectric film on a conducting substrate, using a classical Lorentzian dielectric function for the response of the film. Resonances appearing in the open-quote forbidden close-quote region between the TO and LO frequencies were modelled with an effective medium approximation and are interpreted as arising from small-scale surface roughness. The behavior of the amorphous film spectra were examined within two models. The effective force constant model describes the variation of the reflection-absorption maxima with measured crystallite size in terms of the effective vibration frequency of 1-D atomic chains having force constants distributed according to the parameters of the crystalline-to-amorphous relaxation length and the crystalline to amorphous force constant ratio. The dielectric function continuum model uses the relaxation of the crystal momentum selection rule to calculate the reflection-absorption spectrum based on a dielectric function in which the oscillator strength is the normalized product of a constant dipole strength and the smoothed vibrational density of states

  12. Transport charge of gallium arsenide films synthesized on polycrystalline silicon by ion ablation

    International Nuclear Information System (INIS)

    Kabyshev, A V; Konusov, F V; Remnev, G E; Pavlov, S K

    2014-01-01

    Electrophysical and photoelectric properties of thin GaAs films deposited on polysilicon by pulse ion ablation using high-power ion beams have been investigated. The predominant charge carriers transfer mechanism in films and the type of dark and photoconductivity have been established. A vacuum annealing effect (10 −2 Pa, 300-1000 K) on energetic and kinetic characteristics of dark and photoconductivity, the transfer mechanism and the type of charge carriers have been determined. The most probable causes of changes in the film electric and photoelectric characteristics have been discussed

  13. Spatially resolved localized vibrational mode spectroscopy of carbon in liquid encapsulated Czochralski grown gallium arsenide wafers

    International Nuclear Information System (INIS)

    Yau, Waifan.

    1988-04-01

    Substitutional carbon on an arsenic lattice site is the shallowest and one of the most dominant acceptors in semi-insulating Liquid Encapsulated Czochralski (LEC) GaAs. However, the role of this acceptor in determining the well known ''W'' shape spatial variation of neutral EL2 concentration along the diameter of a LEC wafer is not known. In this thesis, we attempt to clarify the issue of the carbon acceptor's effect on this ''W'' shaped variation by measuring spatial profiles of this acceptor along the radius of three different as-grown LEC GaAs wafers. With localized vibrational mode absorption spectroscopy, we find that the profile of the carbon acceptor is relatively constant along the radius of each wafer. Average values of concentration are 8 x 10E15 cm -3 , 1.1 x 10E15 cm -3 , and 2.2 x 10E15 cm -3 , respectively. In addition, these carbon acceptor LVM measurements indicate that a residual donor with concentration comparable to carbon exists in these wafers and it is a good candidate for the observed neutral EL2 concentration variation. 22 refs., 39 figs

  14. Trapping of positron in gallium arsenide: evidencing of vacancies and of ions with a negative charge

    International Nuclear Information System (INIS)

    Pierre, F.

    1989-12-01

    Vacancy type defects in Ga As as grown and irradiated by electrons are characterized by lifetime of positrons. Positron lifetime increases from 230 ps to 258 and 295 ps in presence of native vacancies in n type Ga As. Configuration of native vacancies changes when Fermi level crosses energy levels localized in the forbidden zone at 0.035eV and at 0.10eV from the bottom of the conduction band. Native vacancies are identified to arsenic vacancies with or without other point defects. Positron lifetime increases from 230 to 260 ps in presence of vacancies produced by low temperature irradiation negative ions are also produced. In irradiated Ga As, these ions trap positrons in competition with vacancies produced by irradiation, showing they have a negative charge. Two annealing zones between 180-300K and 300-600K are presented by vacancies. Ions do not anneal below ambient temperature. Vacancies and negative ions are identified respectively to gallium vacancies and gallium antisite [fr

  15. Gallium arsenide digital integrated circuits for controlling SLAC CW-RF systems

    International Nuclear Information System (INIS)

    Ronan, M.T.; Lee, K.L.; Corredoura, P.; Judkins, J.G.

    1989-01-01

    In order to fill the PEP and SPEAR storage rings with beams from the SLC linac and damping rings, precise control of the linac subharmonic buncher and the damping ring RF is required. Recently several companies have developed resettable GaAs master/slave D-type flip-flops which are capable of operating at frequencies of 3 GHz and higher. Using these digital devices as frequency dividers, one can phase shift the SLAC CW-RF systems to optimize the timing for filling the storage rings. The authors have evaluated the performance of integrated circuits from two vendors for our particular application. Using microstrip circuit techniques, they have built and operated in the accelerator several chassis to synchronize a reset signal from the storage rings to the SLAC 2.856 GHz RF and to phase shift divide-by-four and divide-by-sixteen frequency dividers to the nearest 350 psec bucket required for filling

  16. Gallium arsenide digital integrated circuits for controlling SLAC CW-RF systems

    International Nuclear Information System (INIS)

    Ronan, M.T.; Lee, K.L.; Corredoura, P.; Judkins, J.G.

    1988-10-01

    In order to fill the PEP and SPEAR storage rings with beams from the SLC linac and damping rings, precise control of the linac subharmonic buncher and the damping ring RF is required. Recently several companies have developed resettable GaAs master/slave D-type flip-flops which are capable of operating at frequencies of 3 GHz and higher. Using these digital devices as frequency dividers, one can phase shift the SLAC CW-RF systems to optimize the timing for filling the storage rings. We have evaluated the performance of integrated circuits from two vendors for our particular application. Using microstrip circuit techniques, we have built and operated in the accelerator several chassis to synchronize a reset signal from the storage rings to the SLAC 2.856 GHz RF and to phase shift divide-by-four and divide-by-sixteen frequency dividers to the nearest 350 psec bucket required for filling. 4 refs., 4 figs., 2 tabs

  17. High-performance indium gallium phosphide/gallium arsenide heterojunction bipolar transistors

    Science.gov (United States)

    Ahmari, David Abbas

    Heterojunction bipolar transistors (HBTs) have demonstrated the high-frequency characteristics as well as the high linearity, gain, and power efficiency necessary to make them attractive for a variety of applications. Specific applications for which HBTs are well suited include amplifiers, analog-to-digital converters, current sources, and optoelectronic integrated circuits. Currently, most commercially available HBT-based integrated circuits employ the AlGaAs/GaAs material system in applications such as a 4-GHz gain block used in wireless phones. As modern systems require higher-performance and lower-cost devices, HBTs utilizing the newer, InGaP/GaAs and InP/InGaAs material systems will begin to dominate the HBT market. To enable the widespread use of InGaP/GaAs HBTs, much research on the fabrication, performance, and characterization of these devices is required. This dissertation will discuss the design and implementation of high-performance InGaP/GaAs HBTs as well as study HBT device physics and characterization.

  18. Hot electron light emission in gallium arsenide/aluminium(x) gallium(1-x) arsenic heterostructures

    Science.gov (United States)

    Teke, Ali

    In this thesis we have demonstrated the operation of a novel tunable wavelength surface light emitting device. The device is based on a p-GaAs, and n-Ga1- xAlxAs heterojunction containing an inversion layer on the p- side, and GaAs quantum wells on the n- side, and, is referred to as HELLISH-2 (Hot Electron Light Emitting and Lasing in Semiconductor Heterostructure-Type 2). The devices utilise hot electron longitudinal transport and, therefore, light emission is independent of the polarity of the applied voltage. The wavelength of the emitted light can be tuned with the applied bias from GaAs band-to-band transition in the inversion layer to e1-hh1 transition in the quantum wells. In this work tunable means that the device can be operated at either single or multiple wavelength emission. The operation of the device requires only two diffused in point contacts. In this project four HELLISH-2 samples coded as ES1, ES2, ES6 and QT919 have been studied. First three samples were grown by MBE and the last one was grown by MOVPE techniques. ES1 was designed for single and double wavelength operation. ES2 was a control sample used to compare our results with previous work on HELLISH-2 and ES6 was designed for single, double and triple wavelength operation. Theoretical modelling of the device operation was carried out and compared with the experimental results. HELLISH-2 structure was optimised for low threshold and high efficiency operation as based on our model calculations. The last sample QT919 has been designed as an optimised device for single and double wavelength operation like ES1. HELLISH-2 has a number of advantages over the conventional light emitters, resulting in some possible applications, such as light logic gates and wavelength division multiplexing in optoelectronic.

  19. Structural analysis of as-deposited and annealed low-temperature gallium arsenide

    Science.gov (United States)

    Matyi, R. J.; Melloch, M. R.; Woodall, J. M.

    1993-04-01

    The structure of GaAs grown at low substrate temperatures (LT-GaAs) by molecular beam epitaxy has been studied using high resolution X-ray diffraction methods. Double crystal rocking curves from the as-deposited LT-GaAs show well defined interference fringes, indicating a high level of structural perfection. Triple crystal diffraction analysis of the as-deposited sample showed significantly less diffuse scattering near the LT-GaAs 004 reciprocal lattice point compared with the substrate 004 reciprocal lattice point, suggesting that despite the incorporation of approximately 1% excess arsenic, the epitaxial layer had superior crystalline perfection than did the GaAs substrate. Triple crystal scans of annealed LT-GaAs showed an increase in the integrated diffuse intensity by approximately a factor of three as the anneal temperature was increased from 700 to 900°C. Analogous to the effects of SiO2 precipitates in annealed Czochralski silicon, the diffuse intensity is attributed to distortions in the epitaxial LT-GaAs lattice by arsenic precipitates.

  20. High resolution x-ray diffraction analysis of annealed low-temperature gallium arsenide

    Science.gov (United States)

    Matyi, R. J.; Melloch, M. R.; Woodall, J. M.

    1992-05-01

    High resolution x-ray diffraction methods have been used to characterize GaAs grown at low substrate temperatures by molecular beam epitaxy and to examine the effects of post-growth annealing on the structure of the layers. Double crystal rocking curves from the as-deposited epitaxial layer show well-defined interference fringes, indicating a high level of structural perfection despite the presence of excess arsenic. Annealing at temperatures from 700 to 900 °C resulted in a decrease in the perpendicular lattice mismatch between the GaAs grown at low temperature and the substrate from 0.133% to 0.016% and a decrease (but not total elimination) of the visibility of the interference fringes. Triple-crystal diffraction scans around the 004 point in reciprocal space exhibited an increase in the apparent mosaic spread of the epitaxial layer with increasing anneal temperature. The observations are explained in terms of the growth of arsenic precipitates in the epitaxial layer.

  1. High-pressure phase transition and phase diagram of gallium arsenide

    Science.gov (United States)

    Besson, J. M.; Itié, J. P.; Polian, A.; Weill, G.; Mansot, J. L.; Gonzalez, J.

    1991-09-01

    Under hydrostatic pressure, cubic GaAs-I undergoes phase transitions to at least two orthorhombic structures. The initial phase transition to GaAs-II has been investigated by optical-transmittance measurements, Raman scattering, and x-ray absorption. The structure of pressurized samples, which are retrieved at ambient, has been studied by x-ray diffraction and high-resolution diffraction microscopy. Various criteria that define the domain of stability of GaAs-I are examined, such as the occurrence of crystalline defects, the local variation in atomic coordination number, or the actual change in crystal structure. These are shown not to occur at the same pressure at 300 K, the latter being observable only several GPa above the actual thermodynamic instability pressure of GaAs-I. Comparison of the evolution of these parameters on increasing and decreasing pressure locates the thermodynamic transition region GaAs-I-->GaAs-II at 12+/-1.5 GPa and at 300 K that is lower than generally reported. The use of thermodynamic relations around the triple point, and of regularities in the properties of isoelectronic and isostructural III-V compounds, yields a phase diagram for GaAs which is consistent with this value.

  2. Elaboration of a semiconductive thin film device technology on the basis of monocrystalline gallium arsenide

    International Nuclear Information System (INIS)

    Antoshenko, V.; Taurbaev, T.; Skirnevskaya, E.; Shorin, V.; Mihajlov, L.; Bajganatova, Sh.

    1996-01-01

    The aim of the project: To elaborate the economical technological process of preparing super thin monocrystalline GaAs substrates and device structures for semiconductive electronics. To realize the project it is necessary to solve following problems: o to elaborate and produce the equipment for preparing of separated films and thin film multilayer structures with p-n-junction; - to study conditions of preparing plane crystal perfect separated Ga(Al)As - films; - to optimize regimes of preparing thin film structures with p- and n-conductive - layers; - to determine the optimal methods of transferring autonomous films and structures over the second substrates; - to work out preparing methods of ohmic contacts and electrical commutation; - to optimize the process of repeated use of initial monocrystalline GaAs substrate; - to prepare the samples of discrete thin film photo- and emitting devices. As the result of project realization there will be created cheap ecological technology of heterojunction optoelectronic devices on the basis of GaAs and AlGaAs solid solutions, the laboratory samples of thin film devices will be presented

  3. Magnetoelectric Effect in Gallium Arsenide-Nickel-Tin-Nickel Multilayer Structures

    Science.gov (United States)

    Filippov, D. A.; Tikhonov, A. A.; Laletin, V. M.; Firsova, T. O.; Manicheva, I. N.

    2018-02-01

    Experimental data have been presented for the magnetoelectric effect in nickel-tin-nickel multilayer structures grown on a GaAs substrate by cathodic electrodeposition. The method of fabricating these structures has been described, and the frequency dependence of the effect has been demonstrated. It has been shown that tin used as an intermediate layer reduces mechanical stresses due to the phase mismatch at the Ni-GaAs interface and, thus, makes it possible to grow good structures with a 70-μm-thick Ni layer. The grown structures offer good adhesion between layers and a high Q factor.

  4. Synthesis and characterization of rare-earth oxide transition-metal arsenides and selenides

    Energy Technology Data Exchange (ETDEWEB)

    Peschke, Simon Friedrich

    2017-04-06

    The present thesis includes two different quaternary systems that have been studied extensively. On the one hand, several samples of the REFeAsO{sub 1-x}F{sub x} family of iron-based superconductors were prepared using a novel solid state metathesis reaction, which also provided a possibility to prepare late rare-earth compounds of this family at ambient pressure. Comparison of structural and physical properties of those samples with samples from conventional solid state and high pressure syntheses revealed both, commonalities as well as striking differences. The observations gave reason to the conclusion that superconducting properties strongly depend, beside electronic infl uence, on the structural parameters. On the other hand, the quaternary system RE-T-Se-O with T = Ti-Mn was investigated using a NaI/KI flux mediated synthesis route. It has been shown that oC -La{sub 2}O{sub 2}MnSe{sub 2} is exclusively accessible in su fficient purity by the use of a fl ux material. Therefore, further syntheses in this quaternary system were performed by a flux mediated synthesis route leading to a large amount of new materials. Among them, a new polymorph mC-La{sub 2}O{sub 2}MnSe{sub 2} which forms, together with La{sub 4}MnSe{sub 3}O{sub 4} and La{sub 6}MnSe{sub 4}O{sub 6}, the series La{sub 2n+2}MnSe{sub n+2}O{sub 2n+2}. In addition, the alternative preparation method also enabled a large scale synthesis of the first examples of rare-earth chromium oxyselenides with chromium in the oxidation state +II, namely RE{sub 2}CrSe{sub 2}O{sub 2} (RE = La-Nd), which opened the door to study their magnetism in detail by powder neutron diffraction and muon spin rotation techniques. Research into the La-V-Se-O system revealed the first fi ve quaternary compounds of this family with interesting magnetic properties including ferromagnetism, antiferromagnetism, metamagnetism and more complex behaviour. In addition, the crystal structure of two new quaternary titanium containing oxyselenides were identifi ed and revealed unique structural building blocks that have not been observed in these systems before. The results of this thesis demonstrate not only the power of alternative preparation methods, but also the still increasing structural variety in the discussed quaternary systems. Strategic research in the field of transition-metal oxypnictides and oxychalcogenides, which still include a multiplicity of unknown materials, revealed numerous compounds with interesting physical properties and further investigations will probably uncover also new superconducting materials.

  5. Temperature dependent characterization of gallium arsenide X-ray mesa p-i-n photodiodes

    Energy Technology Data Exchange (ETDEWEB)

    Lioliou, G., E-mail: G.Lioliou@sussex.ac.uk; Barnett, A. M. [Semiconductor Materials and Devices Laboratory, Department Engineering and Design, School of Engineering and Informatics, University of Sussex, Falmer, Brighton BN1 9QT (United Kingdom); Meng, X.; Ng, J. S. [Department of Electronic and Electrical Engineering, University of Sheffield, Mappin Street, Sheffield S1 3JD (United Kingdom)

    2016-03-28

    Electrical characterization of two GaAs p{sup +}-i-n{sup +} mesa X-ray photodiodes over the temperature range 0 °C to 120 °C together with characterization of one of the diodes as an X-ray detector over the temperature range 0 °C to 60 °C is reported as part of the development of photon counting X-ray spectroscopic systems for harsh environments. The randomly selected diodes were fully etched and unpassivated. The diodes were 200 μm in diameter and had 7 μm thick i layers. The leakage current density was found to increase from (3 ± 1) nA/cm{sup −2} at 0 °C to (24.36 ± 0.05) μA/cm{sup −2} at 120 °C for D1 and from a current density smaller than the uncertainty (0.2 ± 1.2) nA/cm{sup −2} at 0 °C to (9.39 ± 0.02) μA/cm{sup −2} at 120 °C for D2 at the maximum investigated reverse bias (15 V). The best energy resolution (FWHM at 5.9 keV) was achieved at 5 V reverse bias, at each temperature; 730 eV at 0 °C, 750 eV at 20 °C, 770 eV at 40 °C, and 840 eV at 60 °C. It was found that the parallel white noise was the main source of the photopeak broadening only when the detector operated at 60 °C, at 5 V, 10 V, and 15 V reverse bias and at long shaping times (>5 μs), whereas the sum of the dielectric noise and charge trapping noise was the dominant source of noise for all the other spectra.

  6. Gallium Arsenide detectors for X-ray and electron (beta particle) spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Lioliou, G.; Barnett, A.M.

    2016-11-11

    Results characterizing GaAs p{sup +}-i-n{sup +} mesa photodiodes with a 10 µm i layer for their spectral response under illumination of X-rays and beta particles are presented. A total of 22 devices, having diameters of 200 µm and 400 µm, were electrically characterized at room temperature. All devices showed comparable characteristics with a measured leakage current ranging from 4 nA/cm{sup 2} to 67 nA/cm{sup 2} at an internal electric field of 50 kV/cm. Their unintentionally doped i layers were found to be almost fully depleted at 0 V due to their low doping density. {sup 55}Fe X-ray spectra were obtained using one 200 µm diameter device and one 400 µm diameter device. The best energy resolution (FWHM at 5.9 keV) achieved was 625 eV using the 200 µm and 740 eV using the 400 µm diameter device, respectively. Noise analysis showed that the limiting factor for the energy resolution of the system was the dielectric noise; if this noise was eliminated by better design of the front end of the readout electronics, the achievable resolution would be 250 eV. {sup 63}Ni beta particle spectra obtained using the 200 µm diameter device showed the potential utility of these detectors for electron and beta particle detection. The development of semiconductor electron spectrometers is important particularly for space plasma physics; such devices may find use in future space missions to study the plasma environment of Jupiter and Europa and the predicted electron impact excitation of water vapor plumes from Europa hypothesized as a result of recent Hubble Space Telescope (HST) UV observations.

  7. Optimization of the structure of gallium-arsenide-based detectors with taking into account recombination losses

    International Nuclear Information System (INIS)

    Katsoev, L. V.; Katsoev, V. V.; Il'ichev, E. A.

    2009-01-01

    The model describing the physical processes accompanying the interaction of heavy charged particles with an ionizing-radiation semiconductor detector is proposed. The problem of optimization of electrical characteristics and construction of the detector cell is solved. The model makes it possible to calculate the output current of the detector as a function of its active-region's thickness and the voltage applied across the sensor under conditions of the presence of recombination processes.

  8. Positron annihilation measurements in high-energy alpha-irradiated n-type gallium arsenide

    Energy Technology Data Exchange (ETDEWEB)

    Pan, Sandip; Mandal, Arunava; SenGupta, Asmita [Visva-Bharati, Department of Physics, Santiniketan, West Bengal (India); Roychowdhury, Anirban [UGC-DAE Consortium for Scientific Research, Kolkata Centre, Kolkata, West Bengal (India)

    2015-07-15

    Positron annihilation lifetime spectroscopy and Doppler broadening annihilation line-shape measurements have been carried out in 40-MeV alpha-irradiated n-type GaAs. After irradiation, the sample has been subjected to an isochronal annealing over temperature region of 25-800 C with an annealing time of 30 min at each set temperature. After each annealing, the positron measurements are taken at room temperature. Formation of radiation-induced defects and their recovery with annealing temperature are investigated. The lifetime spectra of the irradiated sample have been fitted with two lifetimes. The average positron lifetime τ{sub avg} = 244 ps at room temperature after irradiation indicates the presence of defects, and the value of τ{sub 2} (262 ps) at room temperature suggests that the probable defects are mono-vacancies. Two distinct annealing stages in τ{sub avg} at 400-600 C and at 650-800 C are observed. The variations in line-shape parameter (S) and defect-specific parameter (R) during annealing in the temperature region 25-800 C resemble the behaviour of τ{sub avg} indicating the migration of vacancies, formation of vacancy clusters and the disappearance of defects between 400 and 800 C. (orig.)

  9. Time-Resolved Studies of Laser-Induced Phase Transitions in Gallium Arsenide

    Science.gov (United States)

    Siegal, Yakir

    This thesis describes a series of time-resolved experiments of the linear and nonlinear optical properties of GaAs during laser-induced phase transitions. The first set of experiments consists of a direct determination of the behavior of the linear dielectric constant at photon energies of 2.2 eV and 4.4 eV following excitation of the sample with 1.9-eV, 70-fs laser pulses spanning a fluence range from 0 to 2.5 kJ/m^2. The results from this set of experiments were used to extract the behavior of the second-order optical susceptibility from second-harmonic generation measurements made under identical excitation conditions. These experiments are unique because they provide explicit information on the behavior of intrinsic material properties--the linear and nonlinear optical susceptibilities--during laser-induced phase transitions in semiconductors without the ambiguities in interpretation that are generally inherent in reflectivity and second-harmonic generation measurements. The dielectric constant data indicate a drop in the average bonding-antibonding splitting of GaAs following the laser pulse excitation. This behavior leads to a collapse of the band-gap on a picosecond time scale for excitation at fluences near the damage threshold of 1.0 kJ/m ^2 and even faster at higher excitation fluences. The changes in the electronic band structure result from a combination of electronic screening by the excited free carriers and structural deformation of the lattice caused by the destabilization of the covalent bonds. The behavior of the second-order susceptibility shows that the material loses long-range order before the average bonding-antibonding splitting, which is more sensitive to short-range structure, changes significantly. Loss of long-range order and a drop of more than 2 eV in the average bonding-antibonding splitting are seen even at fluences below the damage threshold, a regime in which the laser-induced changes are reversible.

  10. AASERT: Rare Earth Arsenides, Magnetic Semi-Metal Epitaxy for Opto-Electronics

    National Research Council Canada - National Science Library

    Palmstrom, Chris

    2000-01-01

    ...). An ultra-high vacuum sample transfer system and a variable temperature scanning tunneling microscope were attached to two already existing molecular beam epitaxy systems and surface science equipment...

  11. Photo-Ultrasonic Study of Extrinsic Photoconductivity in N-Gallium Arsenide

    Science.gov (United States)

    Bradshaw, Randall Grant

    We have measured the velocity of piezoelectrically -active, ultrasonic shear waves between 1.5 K and 68 K for undoped and for oxygen-doped n-type GaAs, during and after illumination at 4.2 K. The results reveal photoconductivity, persistent photoconductivity, and thermally stimulated conductivity. In both samples the Fermi level in the dark is controlled by excess non-shallow donors near 0.2 eV below the conduction band. Analysis of these effects in oxygen-doped material indicates that there are mid-gap and much shallower photoionizable levels and that there is an electron trap near 20 meV below the conduction band. The undoped n-GaAs sample exhibits photoconductivity quenching with photons in the range 0.95-1.26 eV which, by analysis of the quenching rate, is attributed to the EL2 defect. In addition, levels with large hole capture coefficients have been detected.

  12. Superconductor-semiconductor-superconductor planar junctions of aluminium on DELTA-doped gallium arsenide

    DEFF Research Database (Denmark)

    Taboryski, Rafael Jozef; Clausen, Thomas; Kutchinsky, jonatan

    1997-01-01

    We have fabricated and characterized planar superconductor-semiconductor-superconductor (S-Sm-S) junctions with a high quality (i.e. low barrier) interface between an n++ modulation doped conduction layer in MBE grown GaAs and in situ deposited Al electrodes. The Schottky barrier at the S...

  13. Gallium arsenide p+–n–p+-structures with impoverished base area

    Directory of Open Access Journals (Sweden)

    Karimov A. V.

    2009-06-01

    Full Text Available It is displayed experimentally, that the current transport’s mechanism through p+GaAs–nGaAs–p+GaAs-structure is formed by injection-tunnel and generation-recombination mechanisms. Injection-tunnel current prevails at modulation of base’s part which contains defects, and generation-recombination currents are determinative at modulation of base’s part with lesser defectiveness. p+GaAs–nGaAs–p+GaAs-structures are of interest for creating voltage suppressors and electronic switches on their base.

  14. Low-temperature electron irradiation induced defects in gallium arsenide: bulk and surface acoustic wave studies

    International Nuclear Information System (INIS)

    Brophy, M.J. Jr.

    1985-01-01

    Irradiation of GaAs with 2.25 to 2.5 MeV electrons at temperatures below 190 K produces two peaks in ultrasonic attenuation versus temperature. The defects responsible for both peaks have trigonal symmetry and were observed in n-type and semi-insulating GaAs with bulk and surface acoustic waves (SAW) respectively. Bulk waves at eight frequencies between 9 and 130 MHz and SAW at 73 and 145 MHz were used. The reorientation kinetics of both peaks follow the Arrhenius law. The annealing of both peaks was studied with isochronal and isothermal anneals in the temperature range 200 to 335 K. Peak I anneals with a spectrum of activation energies in the range 0.7-1.1 eV between 220 and 335 K. Peak II anneals with a single activation energy of about 1.1 eV above 300K. The different annealing characteristics indicate that these peaks represent two distinct defects. The annealing above 300 K has not been seen in electrical resistivity measurements, but was observed in earlier length change experiments. Irradiation of GaAs:Cr produces no Cr-radiation defect complexes. The attenuation peak associated with Cr 2+ decrease with electron dose, but starts to recover at 150 K

  15. Thermo-chemical properties and electrical resistivity of Zr-based arsenide chalcogenides

    OpenAIRE

    A. Schlechte, R. Niewa, M. Schmidt, G. Auffermann, Yu. Prots, W. Schnelle, D. Gnida, T. Cichorek, F. Steglich and R. Kniep

    2007-01-01

    Ternary phases in the systems Zr–As–Se and Zr–As–Te were studied using single crystals of ZrAs1.40(1)Se0.50(1) and ZrAs1.60(2)Te0.40(1) (PbFCl-type of structure, space group P4/nmm) as well as ZrAs0.70(1)Se1.30(1) and ZrAs0.75(1)Te1.25(1) (NbPS-type of structure, space group Immm). The characterization covers chemical compositions, crystal structures, homogeneity ranges and electrical resistivities. At 1223 K, the Te-containing phases can be described with the general formula ZrAsxTe2−x, with...

  16. Ab initio calculations of indium arsenide in the wurtzite phase: structural, electronic and optical properties

    International Nuclear Information System (INIS)

    Dacal, Luis C O; Cantarero, A

    2014-01-01

    Most III–V semiconductors, which acquire the zinc-blende phase as bulk materials, adopt the metastable wurtzite phase when grown in the form of nanowires. These are new semiconductors with new optical properties, in particular, a different electronic band gap when compared with that grown in the zinc-blende phase. The electronic gap of wurtzite InAs at the Γ–point of the Brillouin zone (E 0 gap) has been recently measured, E 0 =0.46 eV at low temperature. The electronic gap at the A–point of the Brillouin zone (equivalent to the L–point in the zinc-blende structure, E 1 ) has also been obtained recently based on a resonant Raman scattering experiment. In this work, we calculate the band structure of InAs in the zinc-blende and wurtzite phases, using the full potential linearized augmented plane wave method, including spin-orbit interaction. The electronic band gap has been improved through the modified Becke–Johnson exchange-correlation potential. Both the E 0 and E 1 gaps agree very well with the experiment. From the calculations, a crystal field splitting of 0.122 eV and a spin-orbit splitting of 0.312 eV (the experimental value in zinc-blende InAs is 0.4 eV) has been obtained. Finally, we calculate the dielectric function of InAs in both the zinc-blende and wurtzite phases and a comparative discussion is given. (paper)

  17. Ab initio calculations of indium arsenide in the wurtzite phase: structural, electronic and optical properties

    Science.gov (United States)

    Dacal, Luis C. O.; Cantarero, A.

    2014-03-01

    Most III-V semiconductors, which acquire the zinc-blende phase as bulk materials, adopt the metastable wurtzite phase when grown in the form of nanowires. These are new semiconductors with new optical properties, in particular, a different electronic band gap when compared with that grown in the zinc-blende phase. The electronic gap of wurtzite InAs at the \\Gamma -point of the Brillouin zone ({{E}_{0}} gap) has been recently measured, {{E}_{0}}=0.46 eV at low temperature. The electronic gap at the A-point of the Brillouin zone (equivalent to the L-point in the zinc-blende structure, {{E}_{1}}) has also been obtained recently based on a resonant Raman scattering experiment. In this work, we calculate the band structure of InAs in the zinc-blende and wurtzite phases, using the full potential linearized augmented plane wave method, including spin-orbit interaction. The electronic band gap has been improved through the modified Becke-Johnson exchange-correlation potential. Both the {{E}_{0}} and {{E}_{1}} gaps agree very well with the experiment. From the calculations, a crystal field splitting of 0.122 eV and a spin-orbit splitting of 0.312 eV (the experimental value in zinc-blende InAs is 0.4 eV) has been obtained. Finally, we calculate the dielectric function of InAs in both the zinc-blende and wurtzite phases and a comparative discussion is given.

  18. Digital gallium arsenide insertion into the OH-58D Scout helicopter

    Science.gov (United States)

    Misko, Timothy; Andrade, Norm

    1990-10-01

    A very-high-speed sensor processor subsystem (MSPS) is described in terms of its design, fabrication techniques, and applications to fielded military systems. Incorporated in the design are high-speed GaAs and Si integrated circuits and an algorithm for aided target recognition and multiple target tracking. The existing Mast Mounted Sight (MMS) system is described, and the MSPS system is described in detail to permit a comparison of the two system processors. The speed of the proposed system is 100 million instructions/s, and the system operates in parallel and offers 24-bit floating point multiplies and ALU operations and 16 bit integer multiplies internal with 24-bit integer operations and external memory access. The processor employs existing form factor, power supply, operational software, and interfaces, and can be operated at about the same cost with reduced operator workload.

  19. Gallium arsenide single crystal solar cell structure and method of making

    Science.gov (United States)

    Stirn, Richard J. (Inventor)

    1983-01-01

    A production method and structure for a thin-film GaAs crystal for a solar cell on a single-crystal silicon substrate (10) comprising the steps of growing a single-crystal interlayer (12) of material having a closer match in lattice and thermal expansion with single-crystal GaAs than the single-crystal silicon of the substrate, and epitaxially growing a single-crystal film (14) on the interlayer. The material of the interlayer may be germanium or graded germanium-silicon alloy, with low germanium content at the silicon substrate interface, and high germanium content at the upper surface. The surface of the interface layer (12) is annealed for recrystallization by a pulsed beam of energy (laser or electron) prior to growing the interlayer. The solar cell structure may be grown as a single-crystal n.sup.+ /p shallow homojunction film or as a p/n or n/p junction film. A Ga(Al)AS heteroface film may be grown over the GaAs film.

  20. High temperature X-ray topography on silicon and gallium arsenide

    International Nuclear Information System (INIS)

    Krueger, H.E.

    1976-01-01

    Beginning with a review of the different theories of X-ray scattering on perfect and deformed crystals, results of the dynamic theory relevant specifically for X-ray topography are presented. The reflected intensity recorded in a X-ray topogram is discussed as a function of the angle of incidence, crystal thickness and lateral distribution. These results, together with fundamental relations of the DT which are developed in the annex, give insight into the contrasts induced by defects. Using practical examples Borrmann contrast, contrast produced by point defect agglomerates and dislocations and the Burgers vector method are explained. Thus the whole spectrum of contrast phenomena observed in the experimental part of the paper is presented. The experimental results were achieved with a high-temperature X-ray topography facility constructed for this purpose. The facility is described. (orig./HPOE) [de

  1. Formation of defects at high temperature plastic deformation of gallium arsenide

    Energy Technology Data Exchange (ETDEWEB)

    Mikhnovich, V.V.

    2006-03-14

    The purpose of the present thesis consists in acquiring more concrete information concerning the mechanism of the movement of dislocations and types of defects that appear during the process of dislocation motion on the basis of systematic experimental studies of the GaAs deformation. Experimental studies concerning the dependence of the stress of the samples from their deformation at different values of the deformation parameters (like temperature and deformation speed) were conducted in this paper. To determine the concentration of defects introduced in samples during the deformation process the positron annihilation spectroscopy (PAS) method was used. The second chapter of this paper deals with models of movement of dislocations and origination of defects during deformation of the samples. In the third chapter channels and models of positron annihilation in the GaAs samples are investigated. In the forth chapter the used experimental methods, preparation procedure of test samples and technical data of conducted experiments are described. The fifth chapter shows the results of deformation experiments. The sixth chapter shows the results of positron lifetime measurements by the PAS method. In the seventh chapter one can find analyses of the values of defects concentration that were introduced in samples during deformation. (orig.)

  2. Mechanism of Doping Gallium Arsenide with Carbon Tetrachloride During Organometallic Vapor-Phase Epitaxy

    National Research Council Canada - National Science Library

    Warddrip, Michael

    1997-01-01

    .... In addition, the reaction of CC14 with the GaAs(001) surface was monitored in ultrahigh vacuum using infrared spectroscopy, temperature programmed desorption, and scanning tunneling microscopy...

  3. Carrier emission from the electronic states of self-assembled indium arsenide quantum dots

    International Nuclear Information System (INIS)

    Lin, S.W.; Song, A.M.; Missous, M.; Hawkins, I.D; Hamilton, B.; Engstroem, O.; Peaker, A.R.

    2006-01-01

    We have used the new technique of high resolution (Laplace) transient spectroscopy to examine the electronic states of ensembles of self-assembled quantum dots of InAs in a GaAs matrix. These have been produced by solid source MBE. We have monitored the s and p state occupancies as a function of time under thermal excitation over a range of temperatures after electrons have been captured by the quantum dots with different Fermi level positions. This can provide more information about the interaction of the dots with the host matrix than is possible with optical techniques and gives new fundamental insights into how such dots may operate in electronic devices such as memory and sensors. The increase in resolution of Laplace transient spectroscopy over conventional experiments reveals quite specific rates of carrier loss which we attribute to tunnelling at low temperatures and a combination of thermal emission and tunnelling as the temperature is increased

  4. Multiband Gutzwiller theory of the band magnetism of LaO iron arsenide

    International Nuclear Information System (INIS)

    Schickling, Tobias

    2012-01-01

    In this work we apply the Gutzwiller theory for various models for LaOFeAs. It was discovered in 2008 that doped LaOFeAs is superconducting below a temperature of T c = 28 K. Soon after that discovery, more iron based materials were found which have an atomic structure that is similar to the one of LaOFeAs and which are also superconducting. These materials form the class of iron-based superconductors. Many properties of this material class are in astonishing agreement with the properties of the cuprates. Therefore, studying this new material may promote our understanding of high-T c superconductivity. Despite great efforts, however, Density Functional Theory calculations cannot reproduce the small magnetic moment in the ground state of undoped LaOFeAs. Such calculations overestimate the magnetic moment by a factor 2-3. Within our Gutzwiller approach, we take additional local Coulomb correlations into account. We show that it is necessary to work with the iron 3d-orbitals and the arsenic 4p-orbitals to obtain a realistic description of LaOFeAs. For a broad parameter regime of the electronic interactions, we find a magnetic moment that is in the region of the experimentally observed values. We claim that the magnetic phase in LaOFeAs can be described as a spin-density wave of Landau-Gutzwiller quasi-particles.

  5. Digital Control of the Czochralski Growth of Gallium Arsenide-Controller Software Reference Manual

    Science.gov (United States)

    1987-07-15

    once a parameter was changed. (2) Despite of the fact that there are analog controllers on the market which feature a high degree of automation...single-zone heater is in use.) - 4 - Kfc ^&S^^ p IS’ K: i 1. Digital Control of Czochralski GaAs Crystal Growth (2) Four tachometers which are...34 if either the overlay name or the program version loaded with the overlay do not match the expected data. (It is important not to mix modules

  6. Digital Logic and Reconfigurable Interconnects Using Aluminum Gallium Arsenide Electro-Optic Fredkin Gates

    Science.gov (United States)

    1994-06-01

    electron microscope (SEM) ispection; Carol Isbil for metallizatlon; Wayland Williams for test circuit design and fabrication; and Samuel Adams and...Patterson Air Force Base, OH, Private Conversations, (1990-1994). 156. M. Heiblum, E. E. Mendez and L. Osterling, "Growth by Molecular Beam Epitaxy...and Characterization of High Purity GaAs and AIGaAs," Journal of ADDlied Physics, Vol. 54, 6982, (1983). 157. M. Heiblum, E. E. Mendez and L. Osterling

  7. Radiation and temperature effects in gallium arsenide, indium phosphide, and silicon solar cells

    Science.gov (United States)

    Weinberg, I.; Swartz, C. K.; Hart, R. E., Jr.; Statler, R. L.

    1987-01-01

    The effects of radiation on performance are determined for both n+p and p+n GaAs and InP cells and for silicon n+p cells. It is found that the radiation resistance of InP is greater than that of both GaAs and Si under 1-MeV electron irradiation. For silicon, the observed decreased radiation resistance with decreased resistivity is attributed to the presence of a radiation-induced boron-oxygen defect. Comparison of radiation damage in both p+n and n+p GaAs cells yields a decreased radiation resistance for the n+p cell attributable to increased series resistance, decreased shunt resistance, and relatively greater losses in the cell's p-region. For InP, the n+p configuration is found to have greater radiation resistance than the p+n cell. The increased loss in this latter cell is attributed to losses in the cell's emitter region. Temperature dependency results are interpreted using a theoretical relation for dVoc/dT, which predicts that increased Voc should result in decreased numerical values for dPm/dT. The predicted correlation is observed for GaAs but not for InP, a result which is attributed to variations in cell processing.

  8. Ballistic magnetotransport and spin-orbit interaction in indium antimonide and indium arsenide quantum wells

    Science.gov (United States)

    Peters, John Archibald

    While charge transport in a two-dimensional electron system (2DES) is fairly well understood, many open experimental and theoretical questions related to the spin of electrons remain. The standard 2DES embedded in Alx Ga1-xAs/GaAs heterostructures is most likely not the optimal candidate for such investigations, since spin effects as well as spin-orbit interactions are small perturbations compared to other effects. This has brought InSb- and InAs-based material systems into focus due to the possibility of large spin-orbit interactions. By utilizing elastic scattering off a lithographic barrier, we investigate the consequence of spin on different electron trajectories observed in InSb and InAs quantum wells. We focus on the physical properties of spin-dependent reflection in a 2DES and we present experimental results demonstrating a method to create spin-polarized beams of ballistic electrons in the presence of a lateral potential barrier. Spatial separation of electron spins using cyclotron motion in a weak magnetic is also achieved via transverse magnetic focusing. We also explore electrostatic gating effects in InSb/InAlSb heterostructures and demonstrate the effective use of polymethylglutarimide (PMGI) as a gate dielectric for InSb. The dependence on temperature and on front gate voltage of mobility and density are also examined, revealing a strong dependence of mobility on density. As regards front gate action, there is saturation in the density once it reaches a limiting value. Further, we investigate antidot lattices patterned on InSb/InAlSb and InAs/AlGaSb heterostructures. At higher magnetic fields, ballistic commensurability features are displayed while at smaller magnetic fields localization and quantized oscillatory phenomena appear, with marked differences between InSb and InAs. Interesting localization behavior is exhibited in InSb, with the strength of the localization peak decreasing exponentially with temperature between 0.4 K and 50 K. InAs on the other hand show a strikingly modified antilocalization behavior, with small-period oscillations in magnetic field superposed. We also observe Altshuler-Aronov-Spivak oscillations in InSb and InAs antidot lattices and extract the phase and spin coherence lengths in InAs. Our experimental results are discussed in the light of localization and anti localization as probes of disorder and of spin dephasing mechanisms, modified by the artificial potential of the antidot lattice.

  9. Proximity annealing of sulfur-implanted gallium arsenide using a strip heater

    International Nuclear Information System (INIS)

    Banerjee, S.; Baker, J.

    1985-01-01

    A graphite strip heater has been employed for rapid (-- 30 s) thermal annealing (RTA), at temperatures between 850 and 1150 0 C, of Cr-doped GaAs implanted with 120 keV 32 S + with doses between 10 13 and 10 15 cm -2 . In order to minimize the incongruent evaporation of As, proximity anneals were employed by protecting the implanted samples with GaAs cover pieces. RTA yields electrical activation and donor mobilities better than or comparable to furnace annealing, with less redistribution of the implanted S and background Cr. (author)

  10. Synthesis and characterization of rare-earth oxide transition-metal arsenides and selenides

    International Nuclear Information System (INIS)

    Peschke, Simon Friedrich

    2017-01-01

    The present thesis includes two different quaternary systems that have been studied extensively. On the one hand, several samples of the REFeAsO_1_-_xF_x family of iron-based superconductors were prepared using a novel solid state metathesis reaction, which also provided a possibility to prepare late rare-earth compounds of this family at ambient pressure. Comparison of structural and physical properties of those samples with samples from conventional solid state and high pressure syntheses revealed both, commonalities as well as striking differences. The observations gave reason to the conclusion that superconducting properties strongly depend, beside electronic infl uence, on the structural parameters. On the other hand, the quaternary system RE-T-Se-O with T = Ti-Mn was investigated using a NaI/KI flux mediated synthesis route. It has been shown that oC -La_2O_2MnSe_2 is exclusively accessible in su fficient purity by the use of a fl ux material. Therefore, further syntheses in this quaternary system were performed by a flux mediated synthesis route leading to a large amount of new materials. Among them, a new polymorph mC-La_2O_2MnSe_2 which forms, together with La_4MnSe_3O_4 and La_6MnSe_4O_6, the series La_2_n_+_2MnSe_n_+_2O_2_n_+_2. In addition, the alternative preparation method also enabled a large scale synthesis of the first examples of rare-earth chromium oxyselenides with chromium in the oxidation state +II, namely RE_2CrSe_2O_2 (RE = La-Nd), which opened the door to study their magnetism in detail by powder neutron diffraction and muon spin rotation techniques. Research into the La-V-Se-O system revealed the first fi ve quaternary compounds of this family with interesting magnetic properties including ferromagnetism, antiferromagnetism, metamagnetism and more complex behaviour. In addition, the crystal structure of two new quaternary titanium containing oxyselenides were identifi ed and revealed unique structural building blocks that have not been observed in these systems before. The results of this thesis demonstrate not only the power of alternative preparation methods, but also the still increasing structural variety in the discussed quaternary systems. Strategic research in the field of transition-metal oxypnictides and oxychalcogenides, which still include a multiplicity of unknown materials, revealed numerous compounds with interesting physical properties and further investigations will probably uncover also new superconducting materials.

  11. Atomistic simulation studies of iron sulphide, platinum antimonide and platinum arsenide

    CSIR Research Space (South Africa)

    Ngoepe, PE

    2005-09-01

    Full Text Available The authors present the results of atomistic simulations using derived interatomic potentials for the pyrite-structured metal chalcogenides FeS2, PtSb2 and PtAs2. Structural and elastic constants were calculated and compared with experimental...

  12. Studies on deep electronic levels in silicon and aluminium gallium arsenide alloys

    International Nuclear Information System (INIS)

    Pettersson, H.

    1993-01-01

    This thesis reports on investigations of the electrical and optical properties of deep impurity centers, related to the transition metals (TMs) Ti, Mo, W, V and Ni, in silicon. Emission rates, capture cross sections and photoionization cross sections for these impurities were determined by means of various Junction Space Charge Techniques (JSCTs), such as Deep Level Transient Spectroscopy (DLTS), dark capacitance transient and photo capacitance transient techniques. Changes in Gibbs free energy as a function of temperature were calculated for all levels. From this temperature dependence, the changes in enthalpy and entropy involved in the electron and hole transitions were deduced. The influence of high electric fields on the electronic levels in chalcogen-doped silicon were investigated using the dark capacitance transient technique. The enhancement of the electron emission from the deep centers indicated a more complex field enhancement model than the expected Poole-Frenkel effect for coulombic potentials. The possibility to determine charge states of defects using the Poole-Frenkel effect, as often suggested, is therefore questioned. The observation of a persistent decrease of the dark conductivity due to illumination in simplified AlGaAs/GaAs high Electron Mobility Transistors (HEMTs) over the temperature range 170K< T<300K is reported. A model for this peculiar behavior, based on the recombination of electrons in the two-dimensional electron gas (2DEG) located at the AlGaAs/GaAs interface with holes generated by a two-step excitation process via the deep EL2 center in the GaAs epilayer, is put forward

  13. Size-effects in indium gallium arsenide nanowire field-effect transistors

    Energy Technology Data Exchange (ETDEWEB)

    Zota, Cezar B., E-mail: cezar.zota@eit.lth.se; Lind, E. [Department of Electrical and Information Technology, Lund University, Lund 22101 (Sweden)

    2016-08-08

    We fabricate and analyze InGaAs nanowire MOSFETs with channel widths down to 18 nm. Low-temperature measurements reveal quantized conductance due to subband splitting, a characteristic of 1D systems. We relate these features to device performance at room-temperature. In particular, the threshold voltage versus nanowire width is explained by direct observation of quantization of the first sub-band, i.e., band gap widening. An analytical effective mass quantum well model is able to describe the observed band structure. The results reveal a compromise between reliability, i.e., V{sub T} variability, and on-current, through the mean free path, in the choice of the channel material.

  14. A photoemission study of evaporated manganese on gallium arsenide at elevated temperatures

    International Nuclear Information System (INIS)

    James, D.; Tadich, A.; Riley, J.; Leckey, R.; Emtsev, K.; Seyller, T.; Ley, L.

    2004-01-01

    Full text: The interaction between metals and semiconductors has been extensively researched to achieve an understanding of the formation of Schottky barriers and conditions for low resistance electrical connections to devices. The possibility of the use of magnetic materials to generate spin polarised currents, so called spintronics, and has extended this interest to metals that have not traditionally been used for such contacts. Manganese has recently been used as one element in GaAs and ZnSe based devices so its interaction with such surfaces is of interest. An interest that motivates this study is the possibility of lattice-matched growth of transition metal layers on semiconductors. Lattice mismatch initially appeared to inhibit single crystal transition metal growth, but it has been reported that lattice matched growth can occur in some cases. It is thought that reactions at the interface form a buffer layer, which allows for epitaxial growth via a more comparable lattice constant. We report studies of the growth of manganese films on GaAs(100) at several substrate temperatures using angle resolved photoemission, the diffusion of the Mn in the GaAs substrates using SIMS and the morphology of the layers using AFM images

  15. Gallium Arsenide detectors for X-ray and electron (beta particle) spectroscopy

    Science.gov (United States)

    Lioliou, G.; Barnett, A. M.

    2016-11-01

    Results characterizing GaAs p+-i-n+ mesa photodiodes with a 10 μm i layer for their spectral response under illumination of X-rays and beta particles are presented. A total of 22 devices, having diameters of 200 μm and 400 μm, were electrically characterized at room temperature. All devices showed comparable characteristics with a measured leakage current ranging from 4 nA/cm2 to 67 nA/cm2 at an internal electric field of 50 kV/cm. Their unintentionally doped i layers were found to be almost fully depleted at 0 V due to their low doping density. 55Fe X-ray spectra were obtained using one 200 μm diameter device and one 400 μm diameter device. The best energy resolution (FWHM at 5.9 keV) achieved was 625 eV using the 200 μm and 740 eV using the 400 μm diameter device, respectively. Noise analysis showed that the limiting factor for the energy resolution of the system was the dielectric noise; if this noise was eliminated by better design of the front end of the readout electronics, the achievable resolution would be 250 eV. 63Ni beta particle spectra obtained using the 200 μm diameter device showed the potential utility of these detectors for electron and beta particle detection. The development of semiconductor electron spectrometers is important particularly for space plasma physics; such devices may find use in future space missions to study the plasma environment of Jupiter and Europa and the predicted electron impact excitation of water vapor plumes from Europa hypothesized as a result of recent Hubble Space Telescope (HST) UV observations.

  16. A Study on the Transversal Optical Mode in Amorphous Gallium Arsenide

    OpenAIRE

    Grado-Caffaro, M. A.; Grado-Caffaro, M.

    1998-01-01

    Contributions to the far-infrared spectrum corresponding to both dynamical and structural disorders in a-GaAs are examined when frequency coincides with the transversal optical mode. Under these circumstances, dipole moment matrix element is discussed.

  17. Theoretical study of IR and photoelectron spectra of small gallium-arsenide clusters

    Energy Technology Data Exchange (ETDEWEB)

    Pouchan, Claude; Marchal, Rémi; Hayashi, Shinsuke [Université de Pau et des Pays de l' Adour, IPREM/ECP, UMR CNRS 5254 (France)

    2015-01-22

    Relative stabilities of small Ga{sub n}As{sub m} clusters, as well as their structural electronic and vibrational properties, were computed and analysed using a CCSD(T) reference method since experimental data in this area are sparse or unknown. With the aim of investigating larger clusters, we explored several DFT functionals and basis sets able to mimic the reliable CCSD(T) approach. Among them, the PBE0/SBKJC+sp,d appears as the most efficient to describe the structural and vibrational properties since average differences of about 0.042Å and 5.1cm{sup −1} were obtained for bond lengths and fundamental vibrational frequencies, respectively for the first small clusters [1] of the series found from our GSAM method [2]. As further test, this model is used in order to investigate and revisit an experimental IR spectrum of Ga{sub n}As{sub m} mixture previously published by Li et al. [3]. More complicated is the difficulty which arises in the electronic description due to the presence of numerous low lying electronic states nearly degenerated to correctly describe the electronic structure. The case of Ga{sub 2}As will be discussed and the photoelectron spectra of the Ga{sub 2}As anion reanalyzed on the ground of our calculations [4] comparatively to the experimental spectra obtained by Neumark and co-workers [5].

  18. Quasilinear quantum magnetoresistance in pressure-induced nonsymmorphic superconductor chromium arsenide.

    Science.gov (United States)

    Niu, Q; Yu, W C; Yip, K Y; Lim, Z L; Kotegawa, H; Matsuoka, E; Sugawara, H; Tou, H; Yanase, Y; Goh, Swee K

    2017-06-05

    In conventional metals, modification of electron trajectories under magnetic field gives rise to a magnetoresistance that varies quadratically at low field, followed by a saturation at high field for closed orbits on the Fermi surface. Deviations from the conventional behaviour, for example, the observation of a linear magnetoresistance, or a non-saturating magnetoresistance, have been attributed to exotic electron scattering mechanisms. Recently, linear magnetoresistance has been observed in many Dirac materials, in which the electron-electron correlation is relatively weak. The strongly correlated helimagnet CrAs undergoes a quantum phase transition to a nonmagnetic superconductor under pressure. Here we observe, near the magnetic instability, a large and non-saturating quasilinear magnetoresistance from the upper critical field to 14 T at low temperatures. We show that the quasilinear magnetoresistance may arise from an intricate interplay between a nontrivial band crossing protected by nonsymmorphic crystal symmetry and strong magnetic fluctuations.

  19. Pseudogap from preformed Cooper pairs in a platinum-iron-arsenide superconductor

    Energy Technology Data Exchange (ETDEWEB)

    Surmach, M.A.; Brueckner, F.; Kamusella, S.; Sarkar, R.; Portnichenko, P.Y.; Klauss, H.H.; Inosov, D.S. [TU Dresden (Germany); Park, J.T. [MLZ, Garching (Germany); Luetkens, H.; Biswas, P. [PSI, Villigen (Switzerland); Choi, W.J.; Seo, Y.I.; Kwon, Y.S. [DGIST, Daegu (Korea, Republic of)

    2015-07-01

    Using a combination of μSR, INS and NMR, we investigated the novel iron-based superconductor with a triclinic crystal structure (CaFe{sub 1-x}Pt{sub x}As){sub 10}Pt{sub 3}As{sub 8} (T{sub c}=13 K). The T-dependence of the superfluid density from our μSR relaxation-rate measurements indicates the presence of two superconducting gaps. According to our INS measurements, commensurate spin fluctuations are centered at the (π, 0) wave vector. Their intensity is unchanged across T{sub c}, indicating the absence of a spin resonance typical for many Fe-based superconductors. Instead, we observed a peak in the spin-excitation spectrum around ℎω{sub 0}=7 meV at the same wave vector, which persists above T{sub c}. The temperature dependence of magnetic intensity at 7 meV revealed an anomaly around T*=45 K related to the disappearance of this new mode. A suppression of the spin-lattice relaxation rate, 1/T{sub 1}T, observed by NMR immediately below T* without any notable subsequent anomaly at T{sub c}, indicates that T* could mark the onset of a pseudogap in (CaFe{sub 1-x}Pt{sub x}As){sub 10}Pt{sub 3}As{sub 8}, which is likely associated with the emergence of preformed Cooper pairs.

  20. Computer modeling characterization, and applications of Gallium Arsenide Gunn diodes in radiation environments

    Energy Technology Data Exchange (ETDEWEB)

    El- Basit, Wafaa Abd; El-Ghanam, Safaa Mohamed; Kamh, Sanaa Abd El-Tawab [Electronics Research Laboratory, Physics Department, Faculty of Women for Arts, Science and Education, Ain-Shams University, Cairo (Egypt); Abdel-Maksood, Ashraf Mosleh; Soliman, Fouad Abd El-Moniem Saad [Nuclear Materials Authority, Cairo (Egypt)

    2016-10-15

    The present paper reports on a trial to shed further light on the characterization, applications, and operation of radar speed guns or Gunn diodes on different radiation environments of neutron or γ fields. To this end, theoretical and experimental investigations of microwave oscillating system for outer-space applications were carried out. Radiation effects on the transient parameters and electrical properties of the proposed devices have been studied in detail with the application of computer programming. Also, the oscillation parameters, power characteristics, and bias current were plotted under the influence of different γ and neutron irradiation levels. Finally, shelf or oven annealing processes were shown to be satisfactory techniques to recover the initial characteristics of the irradiated devices.

  1. Group III nitride-arsenide long wavelength lasers grown by elemental source molecular beam epitaxy

    International Nuclear Information System (INIS)

    Coldren, C. W.; Spruytte, S. G.; Harris, J. S.; Larson, M. C.

    2000-01-01

    Elemental source molecular beam epitaxy was used to grow InGaNAs quantum well samples, edge-emitting laser diodes, and vertical-cavity laser diodes on GaAs substrates. The quantum well samples exhibited an as-grown room temperature photoluminescence peak beyond 1310 nm which both increased dramatically in intensity and blueshifted with thermal annealing. Edge emitting laser diodes had threshold current densities as low as 450 and 750 A/cm 2 for single and triple quantum well active regions, respectively, and emitted light at 1220-1250 nm. The vertical cavity laser diodes emitted light at 1200 nm and had threshold current densities of 3 kA/cm 2 and efficiencies of 0.066 W/A. (c) 2000 American Vacuum Society

  2. Browse Title Index

    African Journals Online (AJOL)

    Items 951 - 1000 of 1136 ... ... Issue: Part 2, Synthesis and characterization of iron cobalt (FECO) nanorods prepared by ... ligand and its transition metal chelates, Abstract PDF .... prepared by adding Pr2Co7 magnetic nanoparticles, Abstract PDF.

  3. Electro-catalytic properties of tri-(Fe, Co and Ni shungite composites

    Directory of Open Access Journals (Sweden)

    Bazarbay Serikbayev

    2012-03-01

    Full Text Available The article presents the results of electrochemical investigations obtained on carbon paste electrodes (CPE of shungite from the land Koksu. Electrochemical and electro-catalytic properties of shungite modified with iron, cobalt and nickel were compared.

  4. The levels of certain heavy metals in marine organisms from Aguada Bay (Goa)

    Digital Repository Service at National Institute of Oceanography (India)

    Singbal, S.Y.S.; George, M.D.; Topgi, R.S.; Noronha, R.J.

    The levels of manganese, iron, cobalt, nickel, copper, zinc and mercury have been measured in marine organisms from Aguada Bay which is one of the major fishing zones in Goa, India. The concentration of metals varied from species to species...

  5. Seasonal study on Bothriocephalus as indicator of metal pollution in ...

    African Journals Online (AJOL)

    Seasonal study on Bothriocephalus as indicator of metal pollution in yellowfish, ... Water and sediment, as well as liver, muscle and tapeworm samples were ... iron, cobalt, nickel, copper, zinc, arsenic, selenium, molybdenum, cadmium, tin, ...

  6. Combined angle-resolved X-ray photoelectron spectroscopy, density functional theory and kinetic study of nitridation of gallium arsenide

    Science.gov (United States)

    Mehdi, H.; Monier, G.; Hoggan, P. E.; Bideux, L.; Robert-Goumet, C.; Dubrovskii, V. G.

    2018-01-01

    The high density of interface and surface states that cause the strong Fermi pinning observed on GaAs surfaces can be reduced by depositing GaN ultra-thin films on GaAs. To further improve this passivation, it is necessary to investigate the nitridation phenomena by identifying the distinct steps occurring during the process and to understand and quantify the growth kinetics of GaAs nitridation under different conditions. Nitridation of the cleaned GaAs substrate was performed using N2 plasma source. Two approaches have been combined. Firstly, an AR-XPS (Angle Resolved X-ray Photoelectron Spectroscopy) study is carried out to determine the chemical environments of the Ga, As and N atoms and the composition depth profile of the GaN thin film which allow us to summarize the nitridation process in three steps. Moreover, the temperature and time treatment have been investigated and show a significant impact on the formation of the GaN layer. The second approach is a refined growth kinetic model which better describes the GaN growth as a function of the nitridation time. This model clarifies the exchange mechanism of arsenic with nitrogen atoms at the GaN/GaAs interface and the phenomenon of quasi-saturation of the process observed experimentally.

  7. Lead-germanium ohmic contact on to gallium arsenide formed by the solid phase epitaxy of germanium: A microstructure study

    Science.gov (United States)

    Radulescu, Fabian

    2000-12-01

    Driven by the remarkable growth in the telecommunication market, the demand for more complex GaAs circuitry continued to increase in the last decade. As a result, the GaAs industry is faced with new challenges in its efforts to fabricate devices with smaller dimensions that would permit higher integration levels. One of the limiting factors is the ohmic contact metallurgy of the metal semiconductor field effect transistor (MESFET), which, during annealing, induces a high degree of lateral diffusion into the substrate. Because of its limited reaction with the substrate, the Pd-Ge contact seems to be the most promising candidate to be used in the next generation of MESFET's. The Pd-Ge system belongs to a new class of ohmic contacts to compound semiconductors, part of an alloying strategy developed only recently, which relies on solid phase epitaxy (SPE) and solid phase regrowth to "un-pin" the Fermi level at the surface of the compound semiconductor. However, implementing this alloy into an integrated process flow proved to be difficult due to our incomplete understanding of the microstructure evolution during annealing and its implications on the electrical properties of the contact. The microstructure evolution and the corresponding solid state reactions that take place during annealing of the Pd-Ge thin films on to GaAs were studied in connection with their effects on the electrical properties of the ohmic contact. The phase transformations sequence, transition temperatures and activation energies were determined by combining differential scanning calorimetry (DSC) for thermal analysis with transmission electron microscopy (TEM) for microstructure identification. In-situ TEM annealing experiments on the Pd/Ge/Pd/GaAs ohmic contact system have permitted real time determination of the evolution of contact microstructure. The kinetics of the solid state reactions, which occur during ohmic contact formation, were determined by measuring the grain growth rates associated with each phase from the videotape recordings. With the exception of the Pd-GaAs interactions, it was found that four phase transformations occur during annealing of the Pd:Ge thin films on top of GaAs. The microstructural information was correlated with specific ohmic contact resistivity measurements performed in accordance with the transmission line method (TLM) and these results demonstrated that the Ge SPE growth on top of GaAs renders the optimal electrical properties for the contact. By using the focused ion beam (FIB) method to produce microcantilever beams, the residual stress present in the thin film system was studied in connection with the microstructure. Although, the PdGe/epi-Ge/GaAs seemed to be the optimal microstructural configuration, the presence of PdGe at the interface with GaAs did not damage the contact resistivity significantly. These results made it difficult to establish a charge transport mechanism across the interface but they explained the wide processing window associated with this contact.

  8. Influence of quantizing magnetic field and Rashba effect on indium arsenide metal-oxide-semiconductor structure accumulation capacitance

    Science.gov (United States)

    Kovchavtsev, A. P.; Aksenov, M. S.; Tsarenko, A. V.; Nastovjak, A. E.; Pogosov, A. G.; Pokhabov, D. A.; Tereshchenko, O. E.; Valisheva, N. A.

    2018-05-01

    The accumulation capacitance oscillations behavior in the n-InAs metal-oxide-semiconductor structures with different densities of the built-in charge (Dbc) and the interface traps (Dit) at temperature 4.2 K in the magnetic field (B) 2-10 T, directed perpendicular to the semiconductor-dielectric interface, is studied. A decrease in the oscillation frequency and an increase in the capacitance oscillation amplitude are observed with the increase in B. At the same time, for a certain surface accumulation band bending, the influence of the Rashba effect, which is expressed in the oscillations decay and breakdown, is traced. The experimental capacitance-voltage curves are in a good agreement with the numeric simulation results of the self-consistent solution of Schrödinger and Poisson equations in the magnetic field, taking into account the quantization, nonparabolicity of dispersion law, and Fermi-Dirac electron statistics, with the allowance for the Rashba effect. The Landau quantum level broadening in a two-dimensional electron gas (Lorentzian-shaped density of states), due to the electron scattering mechanism, linearly depends on the magnetic field. The correlation between the interface electronic properties and the characteristic scattering times was established.

  9. Symmetry and structure of carbon-nitrogen complexes in gallium arsenide from infrared spectroscopy and first-principles calculations

    Science.gov (United States)

    Künneth, Christopher; Kölbl, Simon; Wagner, Hans Edwin; Häublein, Volker; Kersch, Alfred; Alt, Hans Christian

    2018-04-01

    Molecular-like carbon-nitrogen complexes in GaAs are investigated both experimentally and theoretically. Two characteristic high-frequency stretching modes at 1973 and 2060 cm-1, detected by Fourier transform infrared absorption (FTIR) spectroscopy, appear in carbon- and nitrogen-implanted and annealed layers. From isotopic substitution, it is deduced that the chemical composition of the underlying complexes is CN2 and C2N, respectively. Piezospectroscopic FTIR measurements reveal that both centers have tetragonal symmetry. For density functional theory (DFT) calculations, linear entities are substituted for the As anion, with the axis oriented along the 〈1 0 0 〉 direction, in accordance with the experimentally ascertained symmetry. The DFT calculations support the stability of linear N-C-N and C-C-N complexes in the GaAs host crystal in the charge states ranging from + 3 to -3. The valence bonds of the complexes are analyzed using molecular-like orbitals from DFT. It turns out that internal bonds and bonds to the lattice are essentially independent of the charge state. The calculated vibrational mode frequencies are close to the experimental values and reproduce precisely the isotopic mass splitting from FTIR experiments. Finally, the formation energies show that under thermodynamic equilibrium CN2 is more stable than C2N.

  10. Grown-in beryllium diffusion in indium gallium arsenide: An ab initio, continuum theory and kinetic Monte Carlo study

    International Nuclear Information System (INIS)

    Liu, Wenyuan; Sk, Mahasin Alam; Manzhos, Sergei; Martin-Bragado, Ignacio; Benistant, Francis; Cheong, Siew Ann

    2017-01-01

    A roadblock in utilizing InGaAs for scaled-down electronic devices is its anomalous dopant diffusion behavior; specifically, existing models are not able to explain available experimental data on beryllium diffusion consistently. In this paper, we propose a more comprehensive model, taking self-interstitial migration and Be interaction with Ga and In into account. Density functional theory (DFT) calculations are first used to calculate the energy parameters and charge states of possible diffusion mechanisms. Based on the DFT results, continuum modeling and kinetic Monte Carlo simulations are then performed. The model is able to reproduce experimental Be concentration profiles. Our results suggest that the Frank-Turnbull mechanism is not likely, instead, kick-out reactions are the dominant mechanism. Due to a large reaction energy difference, the Ga interstitial and the In interstitial play different roles in the kick-out reactions, contrary to what is usually assumed. The DFT calculations also suggest that the influence of As on Be diffusion may not be negligible.

  11. Experimental evidence for an associated defect model for the neutron generated As/sub Ga/ center in gallium arsenide

    International Nuclear Information System (INIS)

    Golzene, A.; Meyer, B.; Schwab, C.

    1984-01-01

    The thermal dependence of EPR spectra of fast neutron irradiated n-type GaAs over the whole 4.2 to 300 K temperature range has been studied using the decomposition of spectra into a quadruplet of four identical Gaussian lines and a Lorentzian singlet. Quadruplet and singlet spectra as well as their proper parameters (inverse of paramagnetic susceptibility, hyperfine constants) could be determined separately. Experiments give evidence that the neutron generated anionic antisites As/sub Ga/ in GaAs are constituting associated defect centers, most likely of intrinsic nature

  12. Dissipative and electrostatic force spectroscopy of indium arsenide quantum dots by non-contact atomic force microscopy

    Science.gov (United States)

    Stomp, Romain-Pierre

    This thesis is devoted to the studies of self-assembled InAs quantum dots (QD) by low-temperature Atomic Force Microscopy (AFM) in frequency modulation mode. Several spectroscopic methods are developed to investigate single electron charging from a two-dimensional electron gas (2DEG) to an individual InAs QD. Furthermore, a new technique to measure the absolute tip-sample capacitance is also demonstrated. The main observables are the electrostatic force between the metal-coated AFM tip and sample as well as the sample-induced energy dissipation, and therefore no tunneling current has to be collected at the AFM tip. Measurements were performed by recording simultaneously the shift in the resonant frequency and the Q-factor degradation of the oscillating cantilever either as a function of tip-sample voltage or distance. The signature of single electron charging was detected as an abrupt change in the frequency shift as well as corresponding peaks in the dissipation. The main experimental features in the force agree well with the semi-classical theory of Coulomb blockade by considering the free energy of the system. The observed dissipation peaks can be understood as a back-action effect on the oscillating cantilever beam due to the fluctuation in time of electrons tunneling back and forth between the 2DEG and the QD. It was also possible to extract the absolute value of the tip-sample capacitance, as a consequence of the spectroscopic analysis of the electrostic force as a function of tip-sample distance for different values of the applied voltage. At the same time, the contact potential difference and the residual non-capacitive force could also be determined as a function of tip-sample distance.

  13. Physicochemical conditions for the stability of manganese-doped nanolayers of gallium arsenide and its iso-electronic analogues

    Directory of Open Access Journals (Sweden)

    Yu. V. Terenteva

    2015-03-01

    Full Text Available In this paper research of stability of nanolayers of manganese doped materials of AIIIBV and AIIBIVСV2 types holding much promise as spintronic semiconductor compounds is described. The method of non-local density functional has been applied to calculate bonding energies {εij (r} in atomic pairs for structures of AIIIBV and AIIBIVСV2 types and for MnAs. According to the calculations of internal energy, entropy and free energy of Helmholtz (Т = 298К, in the context of used models, addition of manganese to the arsenide’s AIIIBV and AIIBIVСV2 nanolayers affects its stability in different ways depending on its morphology and substitution mode. However, a critical instability in nanofilm leading to the tendency of growing of a new phase germ may be formed under any manganese concentrations. This leads to deterioration of electrophysical parameters of magnetic semiconductor compounds that is agreed with experimental data.

  14. The crystal structure of the diluted magnetic semiconductor zinc manganese arsenide (Zn1-xMnx)3As2)

    NARCIS (Netherlands)

    de Vries, G.C.; Frikkee, E.; Helmholdt, R.B.; Kopinga, K.; Jonge, de W.J.M.

    1989-01-01

    The crystal structure of (Zn1-xMnx)3As2 has been determined with neutron powder diffraction for x = 0, 0.08 and 0.135. The structure of these compounds turned out to be the same as that of the a-phase of Cd3As2, space group I41cd. The diffraction for a sample with nominal x = 0.2 indicates the

  15. Scattering and mobility in indium gallium arsenide channel, pseudomorphic high electron mobility transistors (InGaAs pHEMTs)

    International Nuclear Information System (INIS)

    Pearson, J.L.

    1999-03-01

    Extensive transport measurements have been completed on deep and shallow-channelled InGaAs p-HEMTs of varying growth temperature, indium content, spacer thickness and doping density, with a view to a thorough characterisation, both in the metallic and the localised regimes. Particular emphasis was given to MBE grown layers, with characteristics applicable for device use, but low measurement temperatures were necessary to resolve the elastic scattering mechanisms. Measurements made in the metallic regime included transport and quantum mobility - the former over a range of temperatures between 1.5K to 300K. Conductivity measurements were also acquired in the strong localisation regime between about 1.5K and 100K. Experimentally determined parameters were tested for comparison with those predicted by an electrostatic model. Excellent agreement was obtained for carrier density. Other parameters were less well predicted, but the relevant experimental measurements, including linear depletion of the 2DEG, were sensitive to any excess doping above a 'critical' value determined by the model. At low temperature (1.5K), it was found that in all samples tested, transport mobility was strongly limited at all carrier densities by a large q mechanism, possibly intrinsic to the channel. This was ascribed either to scattering by the long-range potentials arising from the indium concentration fluctuations or fluctuations in the thickness of the channel layer. This mechanism dominates the transport at low carrier densities for all samples, but at high carrier density, an additional mechanism is significant for samples with the thinnest spacers tested (2.5nm). This is ascribed to direct electron interaction with the states of the donor layer, and produces a characteristic transport mobility peak. At higher carrier densities, past the peak, quantum mobility was found only to increase monotonically in value. Remote ionised impurity scattering while significant, particularly for samples with intermediate (5nm) and thin (2.5nm) spacers, was never found to dominate. As has been reported for similar structures, anisotropy of transport mobility was found, with the [011] direction having a higher mobility than the [011-bar] direction ((100) GaAs substrate nominally aligned ±0.1 deg.). Intermediate directions had intermediate mobilities. The anisotropy increased with indium content and growth temperature, and persisted to at least 300K. In addition, we found that quantum mobility was independent of direction suggesting that the mechanism responsible is dominated by short-range, large q scattering. Both transport and quantum, mobility were reduced when donor layer correlations were removed using the process of bias cooling. Quantum mobility was more sensitive to this process although excess donors in the doping layer also affected values at high carrier densities. Applying Matthiessen's rule to both correlated and uncorrelated transport mobility data, strongly suggested that remote ionised impurity scattering was consistent with theory for samples with a 5nm spacer, but that an additional mechanism, as mentioned above, must exist in the samples with a 2.5nm spacer. Variable temperature studies further revealed that at low carrier densities, weak localisation was present, with strong, temperature dependent, activated transport also apparent at higher depletion. At high carrier densities in the thinnest spacer samples (2.5nm), a transport mobility peak evolved with decreasing temperature. The mechanism responsible was undetermined, but it was reminiscent of weak localisation-like behaviour. (author)

  16. Ohmic contact formation process on low n-type gallium arsenide (GaAs) using indium gallium zinc oxide (IGZO)

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Seong-Uk [Samsung-SKKU Graphene Center and School of Electronics and Electrical Engineering, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Product and Test Engineering Team, System LSI Division, Samsung Electronics Co., Ltd, Yongin 446-711 (Korea, Republic of); Jung, Woo-Shik [Department of Electrical Engineering, Stanford University, Stanford, CA 94305 (United States); Lee, In-Yeal; Jung, Hyun-Wook; Kim, Gil-Ho [Samsung-SKKU Graphene Center and School of Electronics and Electrical Engineering, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Park, Jin-Hong, E-mail: jhpark9@skku.edu [Samsung-SKKU Graphene Center and School of Electronics and Electrical Engineering, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of)

    2014-02-01

    Highlights: • We propose a method to fabricate non-gold Ohmic contact on low n-type GaAs with IGZO. • 0.15 A/cm{sup 2} on-current and 1.5 on/off-current ratio are achieved in the junction. • InAs and InGaAs formed by this process decrease an electron barrier height. • Traps generated by diffused O atoms also induce a trap-assisted tunneling phenomenon. - Abstract: Here, an excellent non-gold Ohmic contact on low n-type GaAs is demonstrated by using indium gallium zinc oxide and investigating through time of flight-secondary ion mass spectrometry, X-ray photoelectron spectroscopy, transmission electron microscopy, J–V measurement, and H [enthalpy], S [entropy], Cp [heat capacity] chemistry simulation. In is diffused through GaAs during annealing and reacts with As, forming InAs and InGaAs phases with lower energy bandgap. As a result, it decreases the electron barrier height, eventually increasing the reverse current. In addition, traps generated by diffused O atoms induce a trap-assisted tunneling phenomenon, increasing generation current and subsequently the reverse current. Therefore, an excellent Ohmic contact with 0.15 A/cm{sup 2} on-current density and 1.5 on/off-current ratio is achieved on n-type GaAs.

  17. Hard X-ray test and evaluation of a prototype 32x32 pixel gallium-arsenide array

    International Nuclear Information System (INIS)

    Erd, C.; Owens, A.; Brammertz, G.; Bavdaz, M.; Peacock, A.; Laemsae, V.; Nenonen, S.; Andersson, H.; Haack, N.

    2002-01-01

    We report X-ray measurements on a prototype 1.1 cm 2 , 32x32 GaAs pixel array with a pixel size of 350x350 μm 2 produced to assess the technological feasibility of making large area, almost Fano-limited arrays, which operate near room temperature. Measurements were carried out on four widely separated pixels both in our laboratories and using monochromatic X-ray pencil beams at the HASYLAB synchrotron research facility in Hamburg, Germany. The pixels were found to be very uniform both in their energy and spatial responses. For example, typical energy resolutions of ∼280 eV at 10.5 keV, rising to ∼560 eV at 60 keV were achieved. The corresponding resolutions measured under full-pixel illumination were found to be the same within statistics, indicating uniform crystallinity and stoichiometry. Likewise, by scanning a 15 keV, 15x15 μm 2 beam across the entire surface of each of the pixels, the gain uniformity across the pixels (and by implication the entire array) was determined to be statistically flat

  18. Non-local exchange correlation functionals impact on the structural, electronic and optical properties of III-V arsenides

    KAUST Repository

    Anua, N. Najwa; Ahmed, Rashid; Shaari, Amiruddin; Saeed, Mohammad Alam; Ul Haq, Bakhtiar; Goumri-Said, Souraya

    2013-01-01

    our electronic bandstructure calculations at the level of mBJ-LDA potential show considerable improvements over the other XC functionals, even the sX-LDA hybrid functional. We report also the optical properties within mBJ potential, which show a nice

  19. Next Generation Thermal Management Materials: Boron Arsenide for Isotropic Diamond Like Thermal Conductivity - Affordable BAs Processing Innovations, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — The purpose of this SBIR phase I proposal is to design, develop and carry out the materials and process engineering studies to demonstrate the feasibility of...

  20. Growth rate and surfactant-assisted enhancements of rare-earth arsenide InGaAs nanocomposites for terahertz generation

    Directory of Open Access Journals (Sweden)

    R. Salas

    2017-09-01

    Full Text Available We report the effects of the growth rate on the properties of iii-v nanocomposites containing rare-earth-monopnictide nanoparticles. In particular, the beneficial effects of surfactant-assisted growth of LuAs:In0.53Ga0.47As nanocomposites were found to be most profound at reduced LuAs growth rates. Substantial enhancement in the electrical and optical properties that are beneficial for ultrafast photoconductors was observed and is attributed to the higher structural quality of the InGaAs matrix in this new growth regime. The combined enhancements enabled a >50% increase in the amount of LuAs that could be grown without degrading the quality of the InGaAs overgrowth. Dark resistivity increased by ∼25× while maintaining carrier mobilities over 3000 cm2/V s; carrier lifetimes were reduced by >2×, even at high depositions of LuAs. The combined growth rate and surfactant enhancements offer a previously unexplored regime to enable high-performance fast photoconductors that may be integrated with telecom components for compact, broadly tunable, heterodyne THz source and detectors.

  1. Nuclear orientation of rare earth impurities in ferromagnetic host metals

    International Nuclear Information System (INIS)

    Keus, H.E.

    1981-01-01

    Experiments are described investigating the behaviour of the metals Nd and Lu as impurities in a ferromagnetic host metal - iron, cobalt and nickel. The systems have been studied with the aid of nuclear orientation, making use of the interactions between the atom nuclei and the electrons - the so called hyperfine interactions. (C.F.)

  2. Calculating the Entropy of Solid and Liquid Metals, Based on Acoustic Data

    Science.gov (United States)

    Tekuchev, V. V.; Kalinkin, D. P.; Ivanova, I. V.

    2018-05-01

    The entropies of iron, cobalt, rhodium, and platinum are studied for the first time, based on acoustic data and using the Debye theory and rigid-sphere model, from 298 K up to the boiling point. A formula for the melting entropy of metals is validated. Good agreement between the research results and the literature data is obtained.

  3. Natural microbial system for heavy metals cleanup application

    African Journals Online (AJOL)

    compq

    2012-05-24

    May 24, 2012 ... metallurgy and other chemical industries lead to the discharge of ... the direct metal-microbe interaction become less effective .... bio-essential micronutrients as zinc, manganese, iron, cobalt ... 0.9 to 1.1), variable capabilities of cadmium precipitation .... Metals, minerals and microbes: Geomicrobiology and.

  4. Seasonal study on Bothriocephalus as indicator of metal pollution in ...

    African Journals Online (AJOL)

    ... vanadium, chromium, manganese, iron, cobalt, nickel, copper, zinc, arsenic, selenium, molybdenum, cadmium, tin, antimony, tellurium, barium, mercury, thallium, lead and uranium) were determined with an ICP-MS. Bioconcentration of metals (selenium, mercury, and lead during autumn; copper, zinc, selenium, cadmium, ...

  5. Nanoneedles for intracellular applications

    KAUST Repository

    Kosel, Jü rgen; Kavaldzhiev, Mincho Nikolaev; Perez, Jose Efrain

    2017-01-01

    can include iron, cobalt, nickel, gold, and oxides and alloys thereof. The nanoneedle arrays can be used for the administration and/or the extraction of agents from individual cells. In one or more aspects, the nanoneedles can be magnetic nanoneedles

  6. Effect of heat treatment on structure and magnetic properties of ...

    Indian Academy of Sciences (India)

    Wintec

    The chemical composition of the alloy nanoparticles attached on the CNTs was analysed using the EDS spec- trometer attached to the high-resolution electron micro- scope. The EDS spectrum of an individual nanoparticle shows that the sample contains carbon, iron, cobalt and copper. Figure 4 is shown as an example.

  7. Electrolytic production of light lanthanides from molten chloride alloys on a large laboratory scale

    International Nuclear Information System (INIS)

    Szklarski, W.; Bogacz, A.; Strzyzewska, M.

    1979-01-01

    Literature data relating to electrolytic production of rare earth metals are presented. Conditions and results are given of own investigations into the electrolytic process of light lanthanide chloride solutions (LA-Nd) in molten potassium and sodium chlorides conducted on a large laboratory scale using molybdenic, iron, cobaltic and zinc cathodes. Design schemes of employed electrolysers are enclosed. (author)

  8. The influence of electron irradiation at the various temperatures and annealing on carriers mobility at the low temperatures in neutron transmutation doped gallium arsenide

    International Nuclear Information System (INIS)

    Korshunov, F.P.; Kurilovich, N.F.; Prokhorenko, T.A.; Troshchinskii, V.T.; Shesholko, V.K.

    1999-01-01

    The influence of electron irradiation at the various temperatures and annealing on measured at T=100 K carriers mobility in neutron transmutation doped GaAs have been investigated. It was detected that rate of mobility decreasing with irradiation dose increasing decreases when irradiation temperature increases. It was shown that at the same time it take place the radiation defects creating and their particular or full annealing (in the dependence on irradiation temperature). Radiation stimulated annealing (annealing that take place during irradiation at the elevated temperatures) is more effective than the annealing at the same temperatures that take place after crystals are irradiated at room temperature. It means that any defects annealing during irradiation at elevated temperatures take place at more low temperatures than that during annealing after irradiation at room temperature

  9. Atomic-Scale Structure of the Tin DX Center and Other Related Defects in Aluminum Gallium Arsenide Semiconductors Using Moessbauer Spectroscopy.

    Science.gov (United States)

    Greco, Luigi Alessandro

    The DX center in III-V alloys has limited the use of these materials for electronic devices since the defect acts as an electron trap. To be able to control or eliminate the DX center, its atomic scale structure should be understood. Mossbauer spectroscopy has proven to be a valuable technique in probing the atomic-scale structure of certain atomic species. The dopant studied here is ^{119}Sn. The thermal diffusion of Sn in Al_ {rm x}Ga_{rm 1-x }As using different temperatures, times, sample geometries and As_4 overpressures in evacuated and sealed fused silica ampoules was studied by x-ray diffraction (XRD), secondary ion mass spectroscopy and electrochemical capacitance versus voltage measurements. The AlGaAs surfaces decomposed into various Sn, Si, Ga and As oxides when an As_4 overpressure was introduced during annealing. However, annealing under ambient As_4 and furnace cooling eliminated surface decomposition although the Sn diffusion depth was less than that for a 0.5 atm As_4 overpressure. SiO_{rm x} and Si_{rm x }N_{rm y} RF-sputtered thin film capping layers deposited on AlGaAs were studied by XRD and Auger electron spectroscopy. For the annealed SiO_{rm x} films the AlGaAs surface was preserved, independent of the cooling technique used. Mossbauer spectroscopy was conducted on ^{rm 119m} Sn-implanted Al_ {rm x } Ga_{rm 1-x} As (x = 0.22 and 0.25) used for the source experiments and ^{119}Sn-doped Al _{rm x}Ga _{rm 1-x}As (x = 0.15, N _{rm Sn} ~2 times 10 ^{18} cm^{ -3}) for the absorber experiment. The source samples were capped with 120 nm of SiO_ {rm x} to preserve the surface during the systematic study of annealing temperature versus site occupation and electrical activation via Mossbauer spectroscopy at 76 K and 4 K in the dark and in the light (to observe persistent photoconductivity (PPC) due to the DX center). For all of the annealing conditions used the x = 0.22 sample showed little evidence of PPC possibly due to compensating defects and/or radiation-induced capture. After annealing the x = 0.25 sample at 1000^circC for 2 hours under a Ga + Al overpressure, evidence of PPC was found via Hall measurements but no effect was seen by Mossbauer suggesting radiation-induced capture and/or non-nearest-neighbor lattice relaxation. The Ga + Al overpressure also served to decrease the loss of Sn through the SiO _{rm x} film, possibly through the removal of Ga and Al vacancies. The x = 0.15 absorber showed a persistent 15-18% change in the electrical resistance (10% change in n) between the light and dark. However, the observation of this effect was not apparent, even assuming negative-U (2 electron) behavior, in the Mossbauer measurements. This was also consistent with EXAFS results. These studies do not support the broken-bond model of Chadi and Chang, which is considered to be a widely accepted atomic-scale model of the DX center. A defect complex consisting of a substitutional Sn_{rm Ga(Al) }^+ site, and a (V_{ rm III}^-Al_{ rm As}^{-2}) complex, which localizes 3 electrons and may not be a nearest-neighbor to the donor, was chosen for the DX center in the x = 0.15 sample which supports EXAFS, recent positron annihilation and these Mossbauer studies.

  10. Advanced radiation detector development: Advanced semiconductor detector development: Development of a oom-temperature, gamma ray detector using gallium arsenide to develop an electrode detector

    International Nuclear Information System (INIS)

    Knoll, G.F.

    1995-11-01

    The advanced detector development project at the University of Michigan has completed the first full year of its current funding. Our general goals are the development of radiation detectors and spectrometers that are capable of portable room temperature operation. Over the past 12 months, we have worked primarily in the development of semiconductor spectrometers with open-quotes single carrierclose quotes response that offer the promise of room temperature operation and good energy resolution in gamma ray spectroscopy. We have also begun a small scale effort at investigating the properties of a small non-spectroscopic detector system with directional characteristics that will allow identification of the approximate direction in which gamma rays are incident. These activities have made use of the extensive clean room facilities at the University of Michigan for semiconductor device fabrication, and also the radiation measurement capabilities provided in our laboratory in the Phoenix Building on the North Campus. In addition to our laboratory based activities, Professor Knoll has also been a participant in several Department of Energy review activities held in the Forrestal Building and at the Germantown site. The most recent of these has been service on a DOE review panel chaired by Dr. Hap Lamonds that is reviewing the detector development programs supported through the Office of Arms Control and International Security

  11. Electronic Properties of III-V Semiconductors under [111] Uniaxial Strain; a Tight-Binding Approach: I. Arsenides and Gallium Phosphide

    Directory of Open Access Journals (Sweden)

    Miguel E. Mora-Ramos

    2009-01-01

    Full Text Available Empleando un esquema de cálculo tight-binding que usa una base de orbitales sp3s*d5, se estudian propiedades de la estructura electrónica de un grupo de materiales semiconductores IIIV los cuales son de notable interés para la tecnología de dispositivos electrónicos y optoelectrónicos. En específico, se analiza la influencia sobre estas propiedades de una tensión aplicada según la dirección cristalográfica [111], haciendo uso de una formulación basada en la teoría de la elasticidad para establecer las posiciones relativas de los iones vecinos más próximos. Especial atención se presta a la inclusión del efecto de deformación interna de la red cristalina. Para cada material de los estudiados presentamos las dependencias de las brechas energéticas asociadas a los puntos L, X y L de la zona de Brillouin como funciones de la tensión uniaxial en AlAs, GaAs, InAs y GaP. Asimismo, reportamos expresiones de ajuste para los valores de las masas efectivas de conducción en esos cuatro materiales. La comparación de la variación de la brecha de energía en X para el GaP, calculada con nuestro modelo, y recientes resultados experimentales para la transición indirecta entre la banda de huecos pesados y la banda X de conducción arroja una muy buena concordancia.

  12. Formation of scandium nitride (ScN) layer on gallium arsenide (GaAs) substrate using a combined technique of e-beam evaporator and ammonia annealing treatment

    Energy Technology Data Exchange (ETDEWEB)

    Yong Shee Meng, Alvin [Institute of Nano Optoelectronics Research and Technology (INOR), sains@usm, Persiaran Bukit Jambul, 11900 Bayan Lepas, Penang (Malaysia); Zainal, Norzaini, E-mail: norzaini@usm.my [Nano Optoelectronics Research and Laboratory, Universiti Sains Malaysia, sains@usm, Persiaran Bukit Jambul, 11900, Bayan Lepas, Penang (Malaysia); Hassan, Zainuriah; Ibrahim, Kamarulazizi [Institute of Nano Optoelectronics Research and Technology (INOR), sains@usm, Persiaran Bukit Jambul, 11900 Bayan Lepas, Penang (Malaysia)

    2015-12-30

    Graphical abstract: - Highlights: • Forming ScN layer using electron e-beam evaporator with successive NH{sub 3} annealing thermal has been successfully demonstrated. • NH{sub 3} annealing played the role in changing the grain structure of the ScN layer. • The existence of Sc−N bonds was confirmed by XPS measurement. • The 900 °C annealed ScN layer showed the best structural and optical characteristics. • ScN layer annealed at 980 °C exhibited poor structural and optical characteristics. - Abstract: A demonstration on a new technique of growing ScN using electron beam (e-beam) evaporator, coupled with successive ammonia (NH{sub 3}) annealing treatment is presented in this paper. The annealing temperature was varied at 750, 800, 850, 900 and 980 °C in order to obtain the best ScN layer. It was found that as the annealing temperature increased, the surface morphology of the ScN layer changed and ScN grains formed abundantly on the surface. The best surface of ScN layer was found in the 900 °C annealed sample. However, the roughness of the ScN increased with temperature. The photoluminescence (PL) peak of the near-to-band-edge (NBE) of ScN was observable in all samples and its intensity was the highest in the 900 °C annealed sample. Note that when the annealing treatment was conducted at 980 °C, the GaN PL peak is observable. Raman peaks of TO(X) of ScN were much evident at the annealing temperature above 900 °C. The formation of Sc−N bonds was confirmed by X-ray spectroscopy (XPS) measurement. In the end of this work, we propose that the formation of ScN using the above techniques was successful, with thermal annealing at the temperature of 900 °C.

  13. Formation of scandium nitride (ScN) layer on gallium arsenide (GaAs) substrate using a combined technique of e-beam evaporator and ammonia annealing treatment

    International Nuclear Information System (INIS)

    Yong Shee Meng, Alvin; Zainal, Norzaini; Hassan, Zainuriah; Ibrahim, Kamarulazizi

    2015-01-01

    Graphical abstract: - Highlights: • Forming ScN layer using electron e-beam evaporator with successive NH_3 annealing thermal has been successfully demonstrated. • NH_3 annealing played the role in changing the grain structure of the ScN layer. • The existence of Sc−N bonds was confirmed by XPS measurement. • The 900 °C annealed ScN layer showed the best structural and optical characteristics. • ScN layer annealed at 980 °C exhibited poor structural and optical characteristics. - Abstract: A demonstration on a new technique of growing ScN using electron beam (e-beam) evaporator, coupled with successive ammonia (NH_3) annealing treatment is presented in this paper. The annealing temperature was varied at 750, 800, 850, 900 and 980 °C in order to obtain the best ScN layer. It was found that as the annealing temperature increased, the surface morphology of the ScN layer changed and ScN grains formed abundantly on the surface. The best surface of ScN layer was found in the 900 °C annealed sample. However, the roughness of the ScN increased with temperature. The photoluminescence (PL) peak of the near-to-band-edge (NBE) of ScN was observable in all samples and its intensity was the highest in the 900 °C annealed sample. Note that when the annealing treatment was conducted at 980 °C, the GaN PL peak is observable. Raman peaks of TO(X) of ScN were much evident at the annealing temperature above 900 °C. The formation of Sc−N bonds was confirmed by X-ray spectroscopy (XPS) measurement. In the end of this work, we propose that the formation of ScN using the above techniques was successful, with thermal annealing at the temperature of 900 °C.

  14. Inflammatory process decrease by gallium-aluminium-arsenide (GaAlAs) low intensity laser irradiation on postoperative extraction of impacted lower third molar

    International Nuclear Information System (INIS)

    Atihe, Mauricio Martins

    2002-01-01

    This study aimed the observation of inflammatory process decrease by the use of GaAlAs Low Intensity Laser (λ=830 nm; 40 mW) irradiation. Five patients were selected and submitted to surgery of impacted lower third molars, both right and left sides at different occasions. On a first stage, a tooth of a random chosen side - right or left - was extracted by conventional surgery, without LILT. The inflammatory process was measured at postoperative on the first, third and seventh days. This side was then called 'control side'. After 21 days, period in which the inflammatory process of the first surgery was terminated, the other side surgery took place, this time using LILT (4 J at four spots) at postoperative, first and third days. As the previous surgery, the inflammatory process was also measured at postoperative on the first, third and seventh days. This side was called 'experimental or lased side'. The inflammatory process was evaluated by measuring its four characteristic signs: swelling, pain, color and temperature. It was clearly observed a decrease for swelling, pain and color on the lased side which presented significant inference and descriptive statistics. It can be concluded that GaAlAs Low Intensity Laser (λ=830 nm) can surely be used as an additional and important anti-inflammatory source on impacted lower third molar surgeries. (author)

  15. Synergic phototoxic effect of visible light or Gallium-Arsenide laser in the presence of different photo-sensitizers on Porphyromonas gingivalis and Fusobacterium nucleatum

    Directory of Open Access Journals (Sweden)

    Habibollah Ghanbari

    2015-01-01

    Conclusion: Within the limitations of this study, the synergic phototoxic effect of visible light in combination with each of the photosensitizers on P. gingivalis and F. nucleatum. However, the synergic phototoxic effect of laser exposure and hydrogen peroxide and curcumin as photosensitizers on F. nucleatum was not shown.

  16. Thermal conductivity and electrical resistivity of cadmium arsenide (Cd3As2) in the temperature range 4.2-40K1

    International Nuclear Information System (INIS)

    Bartkowski, K.; Ratalowicz, J.; Zdanowicz, W.

    1986-01-01

    Results on electrical resistivity and thermal conductivity measured in the temperature range 4.2-40 K are presented for single-crystal and polycrystalline samples of Cd 3 As 2 . Hall effect has been studied at temperatures of 4.2, 77, and 300K. The calculated value of the conduction electron concentration was in the range 1.87-1.95 10 24 m -3 . Electrical resistivity of all investigated samples was independent of temperature up to about 10K and increased slowsly at higher temperatures. The thermal conductivity shows a maximum in the region in which the lattice component of thermal conductivity dominates. The strong anistropy of the lattice component determines the anisotropy of the total thermal conductivity. The electronic component of thermal conductivity does not exhibit any anisotropy and shows a maximum at a temperature of about 300 K

  17. Time-resolved characterization of InAs/InGaAs quantum dot gain material for 1.3 µm lasers on gallium arsenide

    DEFF Research Database (Denmark)

    Fiore, Andrea; Borri, Paola; Langbein, Wolfgang

    2000-01-01

    The time-resolved optical characterization of InAs/InGaAs quantum dots emitting at 1.3 ìm is presented. A photoluminescence decay time of 1.8 ns and a fast rise time of 10ps are measured close to room temperature....

  18. Characterization and modeling of the intrinsic properties of 1.5-micrometer gallium indium nitrogen arsenic antimonide/gallium arsenide laser

    Science.gov (United States)

    Goddard, Lynford

    2005-12-01

    Low cost access to optical communication networks is needed to satisfy the rapidly increasing demands of home-based high-speed Internet. Existing light sources in the low-loss 1.2--1.6mum telecommunication wavelength bandwidth are prohibitively expensive for large-scale deployment, e.g. incorporation in individual personal computers. Recently, we have extended the lasing wavelength of room-temperature CW GaInNAs(Sb) lasers grown monolithically on GaAs by MBE up to 1.52mum in an effort to replace the traditional, more expensive, InP-based devices. Besides lower cost wafers, GaInNAs(Sb) opto-electronic devices have fundamental material advantages over InP-based devices: a larger conduction band offset which reduces temperature sensitivity and enhances differential gain, a lattice match to a material with a large refractive index contrast, i.e. AlAs, which decreases the necessary number of mirror pairs in DBRs for VCSELs, and native oxide apertures for current confinement. High performance GaInNAs(Sb) edge-emitting lasers, VCSELs, and DFB lasers have been demonstrated throughout the entire telecommunication band. In this work, we analyze the intrinsic properties of the GaInNAsSb material system, e.g. recombination, gain, band structure and renormalization, and efficiency. Theoretical modeling is performed to calculate a map of the bandgap and effective masses for various material compositions. We also present device performance results, such as: room temperature CW threshold densities below 450A/cm2, quantum efficiencies above 50%, and over 425mW of total power from a SQW laser when mounted epi-up and minimally packaged. These results are generally 2--4x better than previous world records for GaAs based devices at 1.5mum. The high CW power and low threshold exhibited by these SQW lasers near 1.5mum make feasible many novel applications, such as broadband Raman fiber amplifiers and uncooled WDM at the chip scale. Device reliability of almost 500 hours at 200mW CW output power has also been demonstrated. Comparative experiments using innovative characterization techniques, such as: the multiple section absorption/gain method to explore the band structure, as well as the Z-parameter to analyze the dominant recombination processes, have identified the physical mechanisms responsible for improved performance. Also, by measuring the temperature dependence of relevant laser parameters, we have been able to simulate device operation while varying temperature and device geometry.

  19. Evaluated phase diagrams of binary metal-tellurium systems of the D-block transition elements

    International Nuclear Information System (INIS)

    Chattopadhyay, G.; Bharadwaj, S.R.

    1989-01-01

    The binary phase diagrams of metal-tellurium systems for twenty seven d-block transition elements have been critically evaluated. Complete phase diagrams are presented for the elements, chromium, manganese, iron, cobalt, nickel, copper, molybdenum, palladium, silver, lanthanum, platinum and gold, whereas, for scandium, titanium, vanadium, yttrium, zirconium, niobium, technitium, ruthenium, rhodium, hafnium, tantalum, tungsten , rhenium, osmium and iridium, the phase diagrams are incomplete and tentative. (author). 20 refs., 27 tabs., 27 figs

  20. United Kingdom. Report 5 [Marine Radioecology. Current Research and Future Scope

    International Nuclear Information System (INIS)

    Mauchline, J.

    1967-01-01

    Four research programmes are suggested: Physical/chemical states of radionuclides in sea water related to their absorption rates by marine organisms; Studies of sea-water/ fresh-water interphases; To discover effects of raising the levels of background radiation by small amounts over long periods; Special studies of neutron-induced radioisotopes of elements such as chromium, manganese, iron, cobalt,, zinc, antimony, beryllium and iodine

  1. Effect of cold plastic deformation on the properties of semihard-magnetic alloys

    International Nuclear Information System (INIS)

    Kovalev, P.M.; Khazanov, S.A.; Chernyak, A.A.

    1982-01-01

    The effect of pass and overall reduction during cold plastic deformation on magnetic properties of the 25KKh15 and 25KFN14 iron-cobalt alloys has been studied. It has been found out that gamma-α transformation which intensity id defined by the deformation temperature occurs during the 25KFN14 and 25KKh15 alloy cold rolling. The pass reduction decrease fostering complete proceeding of #betta#-α transformation is equivalent to the increase of overall reduction

  2. Thermochemistry of compounds of the series A2UIO2(SO4)2·nH2O (A2 = Mn, Fe, Co, Ni, Cu, and Zn)

    International Nuclear Information System (INIS)

    Karyakin, N.V.; Knyazev, A.V.; Gavrilova, S.A.

    2004-01-01

    The solution enthalpies of the amorphous nonaqueous uranyl sulfates of manganese, iron, cobalt, nickel, copper and zinc as well as their crystalline pentahydrates in the 2 M HCl at 298.15 K are determined through the reaction calorimetry method. The standard enthalpies of formation, dehydration and synthesis reactions of these compounds are calculated on the basis of thermochemical data. The character of changing the thermodynamic functions in dependence on the complex salt composition is analyzed [ru

  3. Charge disproportionation in (X0.6Sr0.4)0.99Fe0.8Co0.2O3-δ perovskites (X = La, Pr, Sm, Gd)

    DEFF Research Database (Denmark)

    Pedersen, Thomas; Saadi, Souheil; Nielsen, K.H.

    2005-01-01

    The change in crystal structure and the oxidation state in iron of iron-cobalt-based perovskites with different A-site cations is investigated by the use of powder XRD and Mossbauer spectroscopy. The perovskites investigated are (X0.6Sr0.4)(0.99)Fe0.8Co0.2O3-delta, where X is La, Pr, Sm or Gd...

  4. Effects of Metal Micro and Nano-Particles on hASCs: An In Vitro Model

    OpenAIRE

    Palombella, Silvia; Pirrone, Cristina; Rossi, Federica; Armenia, Ilaria; Cherubino, Mario; Valdatta, Luigi; Raspanti, Mario; Bernardini, Giovanni; Gornati, Rosalba

    2017-01-01

    As the knowledge about the interferences of nanomaterials on human staminal cells are scarce and contradictory, we undertook a comparative multidisciplinary study based on the size effect of zero-valent iron, cobalt, and nickel microparticles (MPs) and nanoparticles (NPs) using human adipose stem cells (hASCs) as a model, and evaluating cytotoxicity, morphology, cellular uptake, and gene expression. Our results suggested that the medium did not influence the cell sensitivity but, surprisingly...

  5. Annual reports in inorganic and general syntheses 1972

    CERN Document Server

    Niedenzu, Kurt

    1973-01-01

    Annual Reports in Inorganic and General Syntheses-1972 presents an organized annual summary of synthetic developments in inorganic chemistry and its related areas. The book discusses alkali and alkaline earth elements, alloys, silver, gold, zinc, cadmium, mercury, boron, aluminum, gallium, indium, thallium, yttrium, scandium, lanthanides, actinides, titanium, zirconium, hafnium, Group V and VI transition elements, manganese, technetium, rhenium, iron, cobalt, nickel, ruthenium, osmium, rhodium, and iridium. The text also describes the chemistry of palladium, platinum, silicon, germanium, tin,

  6. Dissolution of manganese and cobalt and their deposition on Type 304 stainless steel in liquid sodium

    International Nuclear Information System (INIS)

    Yokota, Norikatsu; Shimoyashiki, Shigehiro

    1989-01-01

    Dissolution of manganese and cobalt and their deposition on Type 304 stainless steel in liquid sodium at 833 K for 3.6 x 10 3 ks were examined using a liquid sodium pot. Manganese was easily dissolved in sodium from the iron-manganese alloy specimen and deposited on the steel to form two kind of deposition particles, α-phase (body-centered cubic) composed of iron and γ-phase (face-centered cubic) composed of iron and manganese, respectively. Cobalt which was less easily dissolved than manganese also deposited on the Type 304 stainless steel, giving an iron-cobalt alloy. These three deposition particles corresponded to the precipitation lines of iron-manganese and iron-cobalt phase diagrams at 833 K, respectively. Therefore, the deposition process of manganese or cobalt in sodium was explained as a precipitation process of iron-manganese or iron-cobalt in the solid region of the binary phase diagram. A sodium chromite (NaCrO 2 ) layer was formed on the steel surface. (author)

  7. Advanced semiconductor detector development: Development of a room-temperature, gamma ray detector using gallium arsenide to develop an electrode detector. Progress report, September 30, 1994--September 29, 1995

    International Nuclear Information System (INIS)

    Knoll, G.F.

    1995-07-01

    Devices fabricated from wide bandgap materials that can be operated without cooling suffer from poor energy resolution and are limited to very small volumes; this arises largely from poor hole mobility in compound semiconductors. Three different device configurations are being investigated for possibly overcoming this limitation: buried grid-single carrier devices, trenched single carrier devices, and devices using patterned coplanar electrodes (CdZnTe). In the first, leakage problems were encountered. For the second, a set of specifications has been completed, and electron cyclotron resonance etching will be done at an off-campus facility. For the third, Aurora will supply 3 different CdZnTe detectors. An analytical study was done of the patterned electrode approach

  8. Interdigitated Back-Surface-Contact Solar Cell Modeling Using Silvaco Atlas

    Science.gov (United States)

    2015-06-01

    and Gallium Arsenide, and triple -junction cells with Indium Gallium Phosphide, Gallium Arsenide, and Germanium. Work was also done by Fotis [4] on...output power at various points on the IV curve, from [15]. ............................18 Figure 15. IV curve with the MPP. The orange area is...53 Figure 35. Simulation results of cell power output at maximum power point for varying bulk thicknesses

  9. Indium Gallium Nitride Multijunction Solar Cell Simulation Using Silvaco Atlas

    Science.gov (United States)

    2007-06-01

    models is of great interest in space applications. By increasing the efficiency of photovoltaics, the number of solar panels is decreased. Therefore...obtained in single-junction solar cells by using Gallium Arsenide. Monocrystalline Gallium Arsenide has a maximum efficiency of approximately 25.1% [10

  10. Carbonate fuel cell anodes

    Science.gov (United States)

    Donado, Rafael A.; Hrdina, Kenneth E.; Remick, Robert J.

    1993-01-01

    A molten alkali metal carbonates fuel cell porous anode of lithium ferrite and a metal or metal alloy of nickel, cobalt, nickel/iron, cobalt/iron, nickel/iron/aluminum, cobalt/iron/aluminum and mixtures thereof wherein the total iron content including ferrite and iron of the composite is about 25 to about 80 percent, based upon the total anode, provided aluminum when present is less than about 5 weight percent of the anode. A process for production of the lithium ferrite containing anode by slipcasting.

  11. Investigations of carbon diffusion and carbide formation in nickel-based alloys

    International Nuclear Information System (INIS)

    Schulten, R.; Bongartz, K.; Quadakkers, W.J.; Schuster, H.; Nickel, H.

    1989-11-01

    The present thesis describes the carburization behaviour of nickel based alloys in heavily carburizing environments. The mechanisms of carbon diffusion and carbide precipitation in NiCr alloys with and without ternary additions of iron, cobalt or molybdenum have been investigated. Using the results of carburization experiments, a mathematical model which describes carbon diffusion and carbide formation, was developed. The simulation of the carburization process was carried out by an iterative calculation of the local thermodynamic equilibrium in the alloy. An accurate description of the carbon profiles as a function of time became possible by using a finite-difference calculation. (orig.) [de

  12. Radiation cured polyester compositions containing metal-properties

    Science.gov (United States)

    Szalińska, H.; Pietrzak, M.; Gonerski, A.

    The subject of the studies was unsaturated polyester resin, Polimal-109 and its compositions containing acrylates of: sodium, potassium, calcium, magnesium, barium, manganese, iron, cobalt, copper and acrylic acid. Polyester resin modified with acrylic acid salts was cured with 60Co gamma radiation. Measurements of Vicat softening temperature, water absorption, creep current resistance, volume and surface resistivity, the tangent of dielectric loss angle and permittivity of radiation cured compositions were carried out. The results of the studies presented testify to the fact that the properties of cross-linked polymers alter after ionogenic compounds have been introduced into them.

  13. Radiation cured polyester compositions containing metal-properties

    International Nuclear Information System (INIS)

    Szalinska, H.; Pietrzak, M.; Gonerski, A.

    1987-01-01

    The subject of the studies was unsaturated polyester resin, Polimal-109 and its compositions containing acrylates of: sodium, potassium, calcium, magnesium, barium, manganese, iron, cobalt, copper and acrylic acid. Polyester resin modified with acrylic acid salts was cured with 60 Co gamma radiation. Measurements of Vicat softening temperature, water absorption, creep current resistance, volume and surface resistivity, the tangent of dielectric loss angle and permittivity of radiation cured compositions were carried out. The results of the studies presented testify to the fact that the properties of cross-linked polymers alter after ionogenic compounds have been introduced into them. (author)

  14. Radioluminescence of polyester resin modified with acrylic acid and its salts

    Science.gov (United States)

    Szalińska, H.; Wypych, M.; Pietrzak, M.; Szadkowska-Nicze, M.

    Polimal-109 polyester resin and its compounds containing acrylic acid and its salts such as: sodium, potassium, magnesium, calcium, barium, iron, cobalt, copper and manganese acrylates were studied by the radioluminescence method, including isothermal luminescence (ITL) at a radiation temperature of 77 K, thermoluminescence (RTL) and spectral distributions of isothermal luminescence. Measurements of optical absorption at 77 K before and after irradiation of the investigated samples were also carried out. The results obtained have shown that metal ions play a significant part in the processes taking place in the polyester matrix under the influence of γ 60Co radiation.

  15. Radioluminescence of polyester resin modified with acrylic acid and its salts

    International Nuclear Information System (INIS)

    Szalinska, H.; Wypych, M.; Pietrzak, M.; Szadkowska-Nicze, M.

    1987-01-01

    Polimal-109 polyester resin and its compounds containing acrylic acid and its salts such as: sodium, potassium, magnesium, calcium, barium, iron, cobalt, copper and manganese acrylates were studied by the radioluminescence method, including isothermal luminescence (ITL) at a radiation temperature of 77 K, thermoluminescence (RTL) and spectral distributions of isothermal luminescence. Measurements of optical absorption at 77K before and after irradiation of the investigated samples were also carried out. The results obtained have shown that metal ions play a significant part in the processes taking place in the polyester matrix under the influence of γ 60 Co radiation. (author)

  16. Carbon Nanotubes Filled with Ferromagnetic Materials

    Directory of Open Access Journals (Sweden)

    Albrecht Leonhardt

    2010-08-01

    Full Text Available Carbon nanotubes (CNT filled with ferromagnetic metals like iron, cobalt or nickel are new and very interesting nanostructured materials with a number of unique properties. In this paper we give an overview about different chemical vapor deposition (CVD methods for their synthesis and discuss the influence of selected growth parameters. In addition we evaluate possible growth mechanisms involved in their formation. Moreover we show their identified structural and magnetic properties. On the basis of these properties we present different application possibilities. Some selected examples reveal the high potential of these materials in the field of medicine and nanotechnology.

  17. Perovskite-related oxide materials for oxygen-permeable electrochemical membrans

    OpenAIRE

    Naumovich, E. N.; Yaremchenko, A. A.; Viskup, A. P.; Kharton, V. V.

    2003-01-01

    This brief review is focused on the studies of mixed ionic-electronic conductors on the basis of lanthanum gallate doped with transition metal cations in the В sublattice. The substitution of gallium with iron, cobalt or nickel results in greater electronic conductivity, simultaneously keeping high level of the oxy-gen ionic transport. In particular, La0 90Sr0 10Ga0 65Ni0 20Mg0 1503d perovskite exhib-its attractive oxygen permeability, which is quite similar to that of La2Ni04- and (...

  18. Carbon Nanotubes Filled with Ferromagnetic Materials

    Science.gov (United States)

    Weissker, Uhland; Hampel, Silke; Leonhardt, Albrecht; Büchner, Bernd

    2010-01-01

    Carbon nanotubes (CNT) filled with ferromagnetic metals like iron, cobalt or nickel are new and very interesting nanostructured materials with a number of unique properties. In this paper we give an overview about different chemical vapor deposition (CVD) methods for their synthesis and discuss the influence of selected growth parameters. In addition we evaluate possible growth mechanisms involved in their formation. Moreover we show their identified structural and magnetic properties. On the basis of these properties we present different application possibilities. Some selected examples reveal the high potential of these materials in the field of medicine and nanotechnology. PMID:28883334

  19. Study on the distribution of radioactive trace elements in vitamin D-overloaded rats using the multitracer technique

    International Nuclear Information System (INIS)

    Hirunuma, Rieko; Enomoto, Shuichi; Ambe, Fumitoshi; Endo, Kazutoyo; Ambe, Shizuko

    1999-01-01

    The uptake and distribution of radioisotopes of beryllium, calcium, scandium, vanadium, chromium, manganese, iron, cobalt, nickel, zinc, gallium, arsenic, strontium and barium in vitamin D (VD)-overloaded rats were investigated and compared with those in control rats, using the multitracer technique. Each element revealed its characteristic distribution among various organs in control and VD-overloaded rats. For some elements, such as cobalt and chromium, the distribution patterns in them were significantly different. These results are discussed in terms of the metabolism of the elements in rats

  20. Zinc phosphate conversion coatings

    Science.gov (United States)

    Sugama, Toshifumi

    1997-01-01

    Zinc phosphate conversion coatings for producing metals which exhibit enhanced corrosion prevention characteristics are prepared by the addition of a transition-metal-compound promoter comprising a manganese, iron, cobalt, nickel, or copper compound and an electrolyte such as polyacrylic acid, polymethacrylic acid, polyitaconic acid and poly-L-glutamic acid to a phosphating solution. These coatings are further improved by the incorporation of Fe ions. Thermal treatment of zinc phosphate coatings to generate .alpha.-phase anhydrous zinc phosphate improves the corrosion prevention qualities of the resulting coated metal.

  1. Method of processing radioactive liquid waste

    International Nuclear Information System (INIS)

    Motojima, Kenji; Kawamura, Fumio.

    1981-01-01

    Purpose: To increase the efficiency of removing radioactive cesium from radioactive liquid waste by employing zeolite affixed to metallic compound ferrocyanide as an adsorbent. Method: Regenerated liquid waste of a reactor condensation desalting unit, floor drain and so forth are collected through respective supply tubes to a liquid waste tank, and the liquid waste is fed by a pump to a column filled with zeolite containing a metallic compound ferrocyanide, such as with copper, zinc, manganese, iron, cobalt, nickel or the like. The liquid waste from which radioactive cesium is removed is dried and pelletized by volume reducing and solidifying means. (Yoshino, Y.)

  2. Simultaneous spectrophotometric determination of heavy metal ions Fe(II), Co(II), Ni(II), Cu(II), and Zn(II) with Br-PADPA in primary reactor coolant system

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Tae-Hyeong; Yun, Jong-Il [KAIST, Daejeon (Korea, Republic of)

    2015-05-15

    The performance with integrity of nuclear power plants is highly influenced by the presence of the corrosion products. The deposition of corrosion products in the steam generator is the one of the main concerns of power plants. The quantification of corrosion products is considered of importance. In this study, we applied the spectrophotometric method to detect metal ions such as iron, cobalt, nickel, copper, and zinc, which are major elements of structural material of the plant. In particular, the chemical complexation of those divalent metal ions with 2-(5-bromo-2-pyridylazo)-5-diethylaminophenol (Br-PADAP) provides high molar absorptivity. For the simultaneous determination of metal ions, a partial least square (PLS) regression method was applied. In the present work, the complexation of Br-PADAP with divalent metal ions (iron, cobalt, nickel, copper and zinc) was studied. The PLS regression method was successfully applied for simultaneous elemental detection in multi-element systems. These results suggests that the method is very ample to detect corrosion products in nuclear power plants.

  3. The role of interfacial metal silicates on the magnetism in FeCo/SiO{sub 2} and Fe{sub 49%}Co{sub 49%}V{sub 2%}/SiO{sub 2} core/shell nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    Desautels, R. D., E-mail: rddesautels@physics.umanitoba.ca [Department of Physics and Astronomy, University of Manitoba, Winnipeg, Manitoba R3T 2N2 (Canada); Toyota Research Institute of North America, Ann Arbor, Michigan 48169 (United States); Freeland, J. W. [Advanced Photon Source, Argonne National Laboratory, Argonne, Illinois 60439 (United States); Rowe, M. P. [Toyota Research Institute of North America, Ann Arbor, Michigan 48169 (United States); Lierop, J. van [Department of Physics and Astronomy, University of Manitoba, Winnipeg, Manitoba R3T 2N2 (Canada)

    2015-05-07

    We have investigated the role of spontaneously formed interfacial metal silicates on the magnetism of FeCo/SiO{sub 2} and Fe{sub 49%}Co{sub 49%}V{sub 2%}/SiO{sub 2} core/shell nanoparticles. Element specific x-ray absorption and photoelectron spectroscopy experiments have identified the characteristic spectral features of metallic iron and cobalt from within the nanoparticle core. In addition, metal silicates of iron, cobalt, and vanadium were found to have formed spontaneously at the interface between the nanoparticle core and silica shell. X-ray magnetic circular dichroism experiments indicated that the elemental magnetism was a result of metallic iron and cobalt with small components from the iron, cobalt, and vanadium silicates. Magnetometry experiments have shown that there was no exchange bias loop shift in the FeCo nanoparticles; however, exchange bias from antiferromagnetic vanadium oxide was measured in the V-doped nanoparticles. These results showed clearly that the interfacial metal silicates played a significant role in the magnetism of these core/shell nanoparticles, and that the vanadium percolated from the FeCo-cores into the SiO{sub 2}-based interfacial shell.

  4. The Kondo effect in ferromagnetic atomic contacts.

    Science.gov (United States)

    Calvo, M Reyes; Fernández-Rossier, Joaquín; Palacios, Juan José; Jacob, David; Natelson, Douglas; Untiedt, Carlos

    2009-04-30

    Iron, cobalt and nickel are archetypal ferromagnetic metals. In bulk, electronic conduction in these materials takes place mainly through the s and p electrons, whereas the magnetic moments are mostly in the narrow d-electron bands, where they tend to align. This general picture may change at the nanoscale because electrons at the surfaces of materials experience interactions that differ from those in the bulk. Here we show direct evidence for such changes: electronic transport in atomic-scale contacts of pure ferromagnets (iron, cobalt and nickel), despite their strong bulk ferromagnetism, unexpectedly reveal Kondo physics, that is, the screening of local magnetic moments by the conduction electrons below a characteristic temperature. The Kondo effect creates a sharp resonance at the Fermi energy, affecting the electrical properties of the system; this appears as a Fano-Kondo resonance in the conductance characteristics as observed in other artificial nanostructures. The study of hundreds of contacts shows material-dependent log-normal distributions of the resonance width that arise naturally from Kondo theory. These resonances broaden and disappear with increasing temperature, also as in standard Kondo systems. Our observations, supported by calculations, imply that coordination changes can significantly modify magnetism at the nanoscale. Therefore, in addition to standard micromagnetic physics, strong electronic correlations along with atomic-scale geometry need to be considered when investigating the magnetic properties of magnetic nanostructures.

  5. Disposition of nonflammable low-level radioactive wastes using supercritical water with ruthenium(IV) oxide catalyst

    International Nuclear Information System (INIS)

    Sugiyama, Wataru

    2013-01-01

    This paper presents the distribution behavior of iron, cobalt, cesium, iodine and strontium attached to nonflammable organic materials, in solid, liquid and gas phases during the decomposition of these materials using supercritical water with ruthenium(IV) oxide (RuO 2 ) catalyst. The distributions of these elements under various conditions (initial amounts, with/without precipitation reagent) were determined by using their radioisotopes as simulated low-level radioactive wastes (LLW) in order to ease the detection of trace amounts of elements even in solid and gas phases. Iron and cobalt were found only in the solid phase when iron hydroxide was added as a precipitation reagent before the supercritical water reaction. Cesium, iodine and strontium were found in the liquid phase after the reaction. Therefore, by adding precipitation reagents such as sodium tetraphenylborate, and sodium carbonate (Na 2 CO 3 ) (or sodium hydrogen carbonate (NaHCO 3 )) and silver nitrate (AgNO 3 ) aqueous solutions to each resultant liquid phase containing cesium, strontium and iodine, respectively, these elements can be successfully recovered only in the solid phase. The gases produced during the decomposition of the organic material contain no radioactivity under all conditions in this study. These results indicate that all of the elements investigated in this study (iron, cobalt, cesium, iodine and strontium) can be recovered successfully by this supercritical water process using RuO 2 Consequently, this process is suggested as a predominant candidate for the treatment of nonflammable organic materials in LLW. (author)

  6. Polarized electron sources

    International Nuclear Information System (INIS)

    Prepost, R.

    1994-01-01

    The fundamentals of polarized electron sources are described with particular application to the Stanford Linear Accelerator Center. The SLAC polarized electron source is based on the principle of polarized photoemission from Gallium Arsenide. Recent developments using epitaxially grown, strained Gallium Arsenide cathodes have made it possible to obtain electron polarization significantly in excess of the conventional 50% polarization limit. The basic principles for Gallium and Arsenide polarized photoemitters are reviewed, and the extension of the basic technique to strained cathode structures is described. Results from laboratory measurements of strained photocathodes as well as operational results from the SLAC polarized source are presented

  7. Polarized electron sources

    Energy Technology Data Exchange (ETDEWEB)

    Prepost, R. [Univ. of Wisconsin, Madison, WI (United States)

    1994-12-01

    The fundamentals of polarized electron sources are described with particular application to the Stanford Linear Accelerator Center. The SLAC polarized electron source is based on the principle of polarized photoemission from Gallium Arsenide. Recent developments using epitaxially grown, strained Gallium Arsenide cathodes have made it possible to obtain electron polarization significantly in excess of the conventional 50% polarization limit. The basic principles for Gallium and Arsenide polarized photoemitters are reviewed, and the extension of the basic technique to strained cathode structures is described. Results from laboratory measurements of strained photocathodes as well as operational results from the SLAC polarized source are presented.

  8. POLLUTION PREVENTION IN THE SEMICONDUCTOR INDUSTRY THROUGH RECOVERY AND RECYCLING OF GALLIUM AND ARSENIC FROM GAAS POLISHING WASTES

    Science.gov (United States)

    A process was developed for the recovery of both arsenic and gallium from gallium arsenide polishing wastes. The economics associated with the current disposal techniques utilizing ferric hydroxide precipitation dictate that sequential recovery of toxic arsenic and valuble galliu...

  9. NASA-OAST photovoltaic energy conversion program

    Science.gov (United States)

    Mullin, J. P.; Loria, J. C.

    1984-01-01

    The NASA program in photovoltaic energy conversion research is discussed. Solar cells, solar arrays, gallium arsenides, space station and spacecraft power supplies, and state of the art devices are discussed.

  10. Activities of the Solid State Physics Research Institute

    Science.gov (United States)

    1985-01-01

    Topics addressed include: muon spin rotation; annealing problems in gallium arsenides; Hall effect in semiconductors; computerized simulation of radiation damage; single-nucleon removal from Mg-24; and He-3 reaction at 200 and 400 MeV.

  11. Suitability of integrated protection diodes from diverse semiconductor technologies

    NARCIS (Netherlands)

    van Wanum, Maurice; Lebouille, Tom; Visser, Guido; van Vliet, Frank Edward

    2009-01-01

    Abstract In this article diodes from three different semiconductor technologies are compared based on their suitability to protect a receiver. The semiconductor materials involved are silicon, gallium arsenide and gallium nitride. The diodes in the diverse semiconductor technologies themselves are

  12. OM85. Basic Properties of Optical Materials Summaries of Papers.

    Science.gov (United States)

    1985-05-01

    1984. [2] D. Marcuse : IEEE J. QE-14, 736 (1978). 163 ... . . . .. . . .. . . CALORIMETRIC MEASUREMENT OF OPTICAL ABSORPTION IN SAPPHIRE AT VISIBLE...ARSENIDE Herbert S. Bennett Semiconductor Devices and Circuits Division National Bureau of Standards Gaithersburg, MD 20899 Introduction Lasers, opto

  13. RF-MMW Dipole Antenna Arrays From Laser Illuminated GaAs

    National Research Council Canada - National Science Library

    Umphenour, D

    1998-01-01

    High resistivity photoconductive Gallium Arsenide (GaAs) can be used as elemental Hertzian dipole antenna arrays in which the time varying dipole current is produced by temporally modulating a laser (0.63um...

  14. Electrically Driven Photonic Crystal Nanocavity Devices

    Science.gov (United States)

    2012-01-01

    material, here gallium arsenide and indium arsenide self- assembled quantum dots (QDs). QDs are preferred for the gain medium because they can have...blue points ) and 150 K (green points ). The black lines are linear fits to the above threshold output power of the lasers, which are used to find the...SHAMBAT et al.: ELECTRICALLY DRIVEN PHOTONIC CRYSTAL NANOCAVITY DEVICES 1707 Fig. 13. (a) Tilted SEM picture of a fabricated triple cavity device. The in

  15. Polarization developments

    International Nuclear Information System (INIS)

    Prescott, C.Y.

    1993-07-01

    Recent developments in laser-driven photoemission sources of polarized electrons have made prospects for highly polarized electron beams in a future linear collider very promising. This talk discusses the experiences with the SLC polarized electron source, the recent progress with research into gallium arsenide and strained gallium arsenide as a photocathode material, and the suitability of these cathode materials for a future linear collider based on the parameters of the several linear collider designs that exist

  16. E1 Gap of Wurtzite InAs Single Nanowires Measured by Means of Resonant Raman Spectroscopy

    International Nuclear Information System (INIS)

    Moeller, M.; Lima, M. M. Jr. de; Cantarero, A.; Dacal, L. C. O.; Iikawa, F.; Chiaramonte, T.; Cotta, M. A.

    2011-01-01

    Indium arsenide nanowires were synthesized with an intermixing of wurtzite and zincblende structure by chemical beam epitaxy with the vapor-liquid-solid mechanism. Resonant Raman spectroscopy of the transverse optical phonon mode at 215 cm -1 reveals an E 1 gap of 2.47 eV which is assigned to the electronic band gap at the A point in the indium arsenide wurtzite phase.

  17. E1 Gap of Wurtzite InAs Single Nanowires Measured by Means of Resonant Raman Spectroscopy

    Science.gov (United States)

    Möller, M.; Dacal, L. C. O.; de Lima, M. M.; Iikawa, F.; Chiaramonte, T.; Cotta, M. A.; Cantarero, A.

    2011-12-01

    Indium arsenide nanowires were synthesized with an intermixing of wurtzite and zincblende structure by chemical beam epitaxy with the vapor-liquid-solid mechanism. Resonant Raman spectroscopy of the transverse optical phonon mode at 215 cm-1 reveals an E1 gap of 2.47 eV which is assigned to the electronic band gap at the A point in the indium arsenide wurtzite phase.

  18. Inflammatory process decrease by gallium-aluminium-arsenide (GaAlAs) low intensity laser irradiation on postoperative extraction of impacted lower third molar; Reducao de processo inflamatorio com aplicacao de laser de arseneto de galio aluminio ({lambda}=830 nm) em pos-operatorio de exodontia de terceiros molares inferiores inclusos ou semi-inclusos

    Energy Technology Data Exchange (ETDEWEB)

    Atihe, Mauricio Martins

    2002-07-01

    This study aimed the observation of inflammatory process decrease by the use of GaAlAs Low Intensity Laser ({lambda}=830 nm; 40 mW) irradiation. Five patients were selected and submitted to surgery of impacted lower third molars, both right and left sides at different occasions. On a first stage, a tooth of a random chosen side - right or left - was extracted by conventional surgery, without LILT. The inflammatory process was measured at postoperative on the first, third and seventh days. This side was then called 'control side'. After 21 days, period in which the inflammatory process of the first surgery was terminated, the other side surgery took place, this time using LILT (4 J at four spots) at postoperative, first and third days. As the previous surgery, the inflammatory process was also measured at postoperative on the first, third and seventh days. This side was called 'experimental or lased side'. The inflammatory process was evaluated by measuring its four characteristic signs: swelling, pain, color and temperature. It was clearly observed a decrease for swelling, pain and color on the lased side which presented significant inference and descriptive statistics. It can be concluded that GaAlAs Low Intensity Laser ({lambda}=830 nm) can surely be used as an additional and important anti-inflammatory source on impacted lower third molar surgeries. (author)

  19. Inflammatory process decrease by gallium-aluminium-arsenide (GaAlAs) low intensity laser irradiation on postoperative extraction of impacted lower third molar; Reducao de processo inflamatorio com aplicacao de laser de arseneto de galio aluminio ({lambda}=830 nm) em pos-operatorio de exodontia de terceiros molares inferiores inclusos ou semi-inclusos

    Energy Technology Data Exchange (ETDEWEB)

    Atihe, Mauricio Martins

    2002-07-01

    This study aimed the observation of inflammatory process decrease by the use of GaAlAs Low Intensity Laser ({lambda}=830 nm; 40 mW) irradiation. Five patients were selected and submitted to surgery of impacted lower third molars, both right and left sides at different occasions. On a first stage, a tooth of a random chosen side - right or left - was extracted by conventional surgery, without LILT. The inflammatory process was measured at postoperative on the first, third and seventh days. This side was then called 'control side'. After 21 days, period in which the inflammatory process of the first surgery was terminated, the other side surgery took place, this time using LILT (4 J at four spots) at postoperative, first and third days. As the previous surgery, the inflammatory process was also measured at postoperative on the first, third and seventh days. This side was called 'experimental or lased side'. The inflammatory process was evaluated by measuring its four characteristic signs: swelling, pain, color and temperature. It was clearly observed a decrease for swelling, pain and color on the lased side which presented significant inference and descriptive statistics. It can be concluded that GaAlAs Low Intensity Laser ({lambda}=830 nm) can surely be used as an additional and important anti-inflammatory source on impacted lower third molar surgeries. (author)

  20. Accumulation of trace metals in coastal marine organisms

    International Nuclear Information System (INIS)

    Weers, A.W. van; Raaphorst, J.G. van

    1980-01-01

    ECN at Petten carries out a survey on the occurrence of trace metals in coastal marine organisms. The survey is aimed to provide an estimate of concentration factors in local marine organisms for neutron activation products released as low-level liquid radioactive waste into the North Sea. The organisms studied are red and brown seaweed, edible mussels ans shrimp. A summary of the results of analyses of iron, cobalt, zinc, silver and antimony in these organisms is presented. Concentration factors derived from mean stable-element concentrations range from about 50 for Sb in red seaweed and shrimp to about 10 4 for Fe in red seaweed and mussels. The largest variation is shown for zinc in seaweed, which variation is seasonal and most pronounced in brown seaweed. A discussion of the data is presented in relation to data from other West-European coastal areas and to data used for the radiological assessment of deep sea disposal of radioactive waste

  1. The effects of irradiation on structural metals according to Geneva Proceedings

    International Nuclear Information System (INIS)

    Klersy, R.

    1956-01-01

    The author proposes a critical synthesis of contributions to Geneva Proceedings: a Russian one (The effect of irradiation on the structure and properties of the structural materials), a British one (Radiation damage in non-fissile materials), an American one (The theory of lattice displacements produced during irradiation), and some others sometimes evoked. After a brief assessment of the experimental and theoretical interest of these contributions, the author addresses various issues and outlines how these contributions addressed them: mechanical and thermal tests (elasticity modulus, dilatation, failure characteristics of pure metals and alloys, resilience, hardness, effect of radiation on hardness of metals previously submitted to various strain hardening, creep, fatigue), resistivity of pure metals (copper, iron, cobalt, nickel, tungsten) submitted to deuteron or proton irradiation, behaviour of ordered alloys, recovery of irradiation effects

  2. [Trace elements of bone tumors].

    Science.gov (United States)

    Kalashnikov, V M; Zaĭchik, V E; Bizer, V A

    1983-01-01

    Due to activation analysis involving the use of neutrons from a nuclear reactor, the concentrations of 11 trace elements: scandium, iron, cobalt, mercury, rubidium, selenium, silver, antimony, chrome, zinc and terbium in intact bone and skeletal tumors were measured. 76 specimens of bioptates and resected material of operations for bone tumors and 10 specimens of normal bone tissue obtained in autopsies of cases of sudden death were examined. The concentrations of trace elements and their dispersion patterns in tumor tissue were found to be significantly higher than those in normal bone tissue. Also, the concentrations of some trace elements in tumor differed significantly from those in normal tissue; moreover, they were found to depend on the type and histogenesis of the neoplasm.

  3. SEPARATION OF METAL SALTS BY ADSORPTION

    Science.gov (United States)

    Gruen, D.M.

    1959-01-20

    It has been found that certain metal salts, particularly the halides of iron, cobalt, nickel, and the actinide metals, arc readily absorbed on aluminum oxide, while certain other salts, particularly rare earth metal halides, are not so absorbed. Use is made of this discovery to separate uranium from the rare earths. The metal salts are first dissolved in a molten mixture of alkali metal nitrates, e.g., the eutectic mixture of lithium nitrate and potassium nitrate, and then the molten salt solution is contacted with alumina, either by slurrying or by passing the salt solution through an absorption tower. The process is particularly valuable for the separation of actinides from lanthanum-group rare earths.

  4. Evolution of the mössbauer spectra of ludwigite Co3 - x Fe x O2BO3 with substitution of iron for cobalt

    Science.gov (United States)

    Knyazev, Yu. V.; Ivanova, N. B.; Bayukov, O. A.; Kazak, N. V.; Bezmaternykh, L. N.; Vasiliev, A. D.

    2013-06-01

    A concentration series of single crystals of iron-cobalt ludwigites Co3 - x Fe x O2BO3 ( x = 0.0125, 0.025, 0.050, 0.10, 1.0) has been synthesized. The structure has been studied using X-ray diffraction and Mössbauer effect. A preferred occupation of nonequivalent crystallographic positions by iron in the ludwigite structure has been revealed. It has been found that the valence of substituting iron ions is three. It has been revealed that the structure of the γ-resonance spectrum of Co2FeO2BO3 is complicated due to a composition disorder in the system.

  5. Assessment of the Impact of Industrial Effluents on Groundwater Quality in Okhla Industrial Area, New Delhi, India

    Directory of Open Access Journals (Sweden)

    Wequar Ahmad Siddiqui

    2009-01-01

    Full Text Available In the present study physicochemical parameters like pH, hardness, TDS, chloride, sulphate, nitrate, fluoride, DO, COD and conductivity of some important heavy metals such as iron, cobalt, cadmium, lead, mercury, chromium, selenium and arsenic were first analyzed in effluent water of Okhla industrial area phase-II and then groundwater of near by areas. Obtained values of effluent water were compared with ISI standard for effluent water discharge and groundwater values were compared with ISI and WHO drinking water standards. The result shows that discharge of untreated effluents by the industries is leading to contamination of groundwater of the surrounding areas. Lead, mercury, fluoride, TDS, sulphate was above the desirable limit in effluent water (ISI standard for effluent water discharge. Subsequent analysis of groundwater of nearby areas was rated as unacceptable for drinking because of presence of fluoride in all the samples above the desirable limit. Lead, mercury, cadmium, chloride was also detected in many samples.

  6. Origin of spherule samples recovered from antarctic ice sheet-Terrestrial or extraterrestrial?

    Energy Technology Data Exchange (ETDEWEB)

    Sekimoto, Shun; Takamiya, Koichi; Shibata, Seiichi [Research Reactor Institute, Kyoto University, Osaka (Japan); Kobayashi, Takayuki [College of Humanities and Sciences, Nihon University, Tokyo (Japan); Ebihara, Mitsuru [Dept. of Chemistry, Tokyo Metropolitan University, Tokyo (Japan)

    2016-04-15

    Thirty-eight spherules from the Antarctic ice sheet were analyzed using neutron activation analysis under two different conditions to investigate their origin. In almost all of these spherules, the contents of iron, cobalt, and manganese were determined to be 31% to 88%, 17 mg/kg to 810 mg/kg, and 0.017% to 7%, respectively. A detectable iridium content of 0.84 mg/kg was found in only one spherule, which was judged to be extraterrestrial in origin. A comparison of elemental compositions of the Antarctic spherules analyzed in this study with those of deep-sea sediment spherules and those of terrestrial materials revealed that most of the Antarctic spherules except for the sample in which iridium was detected could not be identified as extraterrestrial in origin.

  7. Federal Republic of Germany. Report 1 [Marine Radioecology. Current Research and Future Scope

    International Nuclear Information System (INIS)

    Feldt, W.

    1967-01-01

    Present research program (long term): Radioactive waste disposal - Investigations under this programme take place in an area which might be used for disposal of low-level waste from European countries. The first step of the programme is to get an idea of the ecological situation which will be worked out in co-operation with the German Hydrographic Institute and the Institute of Hydrology and Fisheries Science of the University of Hamburg. Samples of benthic fauna, plankton and fish will be analysed on their content of 90 Sr and 137 Cs, to get information of the long-term contamination with radioactive fall-out. Further the samples will be analysed on their content of stable zinc, manganese, iron, cobalt, molybdenum and chromium. This enables us to calculate the maximum concentration factors for these elements. The distribution of species and the number of organisms at various depths provide an impression of vertical biological transport

  8. Nanoneedles for intracellular applications

    KAUST Repository

    Kosel, Jurgen

    2017-07-13

    Nanoneedles and nanoneedle arrays and methods of making nanoneedles are provided. The methods can include multilayer fabrication methods using a negative photoresist and/or a positive photoresist. The nanoneedle arrays include one or more nanoneedles attached to a surface of a substrate. The nanoneedle can have both a proximal opening and a distal opening, and an inner passageway connecting the proximal opening and the distal opening. The nanoneedle can have a functional coating. The nanoneedle can include iron, cobalt, nickel, gold, and oxides and alloys thereof. The nanoneedle arrays can be used for the administration and/or the extraction of agents from individual cells. In one or more aspects, the nanoneedles can be magnetic nanoneedles. An oscillating magnetic field applied to a magnetic nanoneedle can induce one or both of heating and vibration of the magnetic nanoneedle. The heating and/or vibration can cause a magnetic nanoneedle to penetrate the wall of a cell.

  9. Analysis of Beryllium Having Irradiated at the RSG-GAS Core using ORIGEN2 Code

    International Nuclear Information System (INIS)

    Jaja Sukmana; Jonnie AK; S-Suwarto; Irwan

    2012-01-01

    Analysis of activation products generated by irradiated beryllium at the RSG-GAS core has been done using ORIGEN2 code. By assuming that irradiation is 176 days, neutron flux average of 2.30e+14 n/cm 2 s, radioisotopes rose from activated Be are tritium, lithium, beryllium, carbon, magnesium, aluminum, silicon, argon, calcium, scandium, vanadium, chromium, manganese, iron, cobalt, nickel, copper, zinc, silver, and lead. The highest activity after 100 days of irradiation demonstrated by Be-10 (7.99 E-03 Curie), H-3 (2.97 E-03 Curie), Cr-51, Fe-55 and Co-60. Radioactivity generated getting smaller when irradiation time are long. From this analysis it can be conclude that radioactivity was caused by impurities present in Be such as Mn-54, Fe-59, Zn-65, and Li-6. (author)

  10. Removal of sulfur from process streams

    International Nuclear Information System (INIS)

    Brignac, D.G.

    1984-01-01

    A process wherein water is added to a non-reactive gas stream, preferably a hydrogen or hydrogen-containing gas stream, sufficient to raise the water level thereof to from about 0.2 percent to about 50 percent, based on the total volume of the process gas stream, and the said moist gas stream is contacted, at elevated temperature, with a particulate mass of a sulfur-bearing metal alumina spinel characterized by the formula MAl 2 O 4 , wherein M is chromium, iron, cobalt, nickel, copper, cadmium, mercury, or zinc to desorb sulfur thereon. In the sulfur sorption cycle, due to the simultaneous adsorption of water and sulfur, the useful life of the metal alumina spinel for sulfur adsorption can be extended, and the sorbent made more easily regenerable after contact with a sulfur-bearing gas stream, notably sulfur-bearing wet hydrogen or wet hydrogen-rich gas streams

  11. Cooperative research in coal liquefaction. Technical progress report, May 1, 1993--April 30, 1994

    Energy Technology Data Exchange (ETDEWEB)

    Huffman, G.P. [ed.

    1994-10-01

    Accomplishments for the past year are presented for the following tasks: coliquefaction of coal with waste materials; catalysts for coal liquefaction to clean transportation fuels; fundamental research in coal liquefaction; and in situ analytical techniques for coal liquefaction and coal liquefaction catalysts some of the highlights are: very promising results have been obtained from the liquefaction of plastics, rubber tires, paper and other wastes, and the coliquefaction of wastes with coal; a number of water soluble coal liquefaction catalysts, iron, cobalt, nickel and molybdenum, have been comparatively tested; mossbauer spectroscopy, XAFS spectroscopy, TEM and XPS have been used to characterize a variety of catalysts and other samples from numerous consortium and DOE liquefaction projects and in situ ESR measurements of the free radical density have been conducted at temperatures from 100 to 600{degrees}C and H{sub 2} pressures up to 600 psi.

  12. Nanostructured metal foams: synthesis and applications

    Energy Technology Data Exchange (ETDEWEB)

    Luther, Erik P [Los Alamos National Laboratory; Tappan, Bryce [Los Alamos National Laboratory; Mueller, Alex [Los Alamos National Laboratory; Mihaila, Bogdan [Los Alamos National Laboratory; Volz, Heather [Los Alamos National Laboratory; Cardenas, Andreas [Los Alamos National Laboratory; Papin, Pallas [Los Alamos National Laboratory; Veauthier, Jackie [Los Alamos National Laboratory; Stan, Marius [Los Alamos National Laboratory

    2009-01-01

    Fabrication of monolithic metallic nanoporous materials is difficult using conventional methodology. Here they report a relatively simple method of synthesizing monolithic, ultralow density, nanostructured metal foams utilizing self-propagating combustion synthesis of novel metal complexes containing high nitrogen energetic ligands. Nanostructured metal foams are formed in a post flame-front dynamic assembly with densities as low as 0.011 g/cc and surface areas as high as 270 m{sup 2}/g. They have produced metal foams via this method of titanium, iron, cobalt, nickel, zirconium, copper, palladium, silver, hafnium, platinum and gold. Microstructural features vary as a function of composition and process parameters. Applications for the metal foams are discussed including hydrogen absorption in palladium foams. A model for the sorption kinetics of hydrogen in the foams is presented.

  13. Comparative behaviour of toxic metals in a marine ecosystem

    International Nuclear Information System (INIS)

    Geldiay, R.; Uysal, H.

    1975-01-01

    Tapes decussatus, which has economic importance, is found mainly in three localities only of Izmir Bay, Turkey: Cakalburnu Fishery, Deniz Bostanli and Tuzla. The animals are most abundant in Cakalburnu Fishery and Deniz Bostanli, but are rare in Tuzla. These localities are the inward extensions of the sea and are shallow. It is assumed that analyses of the Tapes decussatus can give useful information on the accumulation and distribution of trace elements and their isotopes. Field and laboratory experiments have been carried out to see how concentrations and distribution within the organism vary according to size, locality, and season of the year. Concentrations of copper, manganese, zinc, iron, cobalt, lead and mercury in samples were collected from the three localities, representing different environmental conditions. A comparison of the concentrations of copper, manganese, zinc, iron, lead, cobalt, mercury in the tissues and the organs of the animals has been made and the seasonal variation of each has been determined for each locality. (author)

  14. Determination of several trace metals in biological materials by PIXE analysis after solvent extraction and polystyrene-film collection

    International Nuclear Information System (INIS)

    Iwata, Yoshihiro; Korenaga, Tatsumi; Suzuki, Nobuo

    1991-01-01

    Traces of vanadium, manganese, iron, cobalt, nickel, copper, and zinc were quantitatively extracted with diethyldithiocarbamate (DDTC) in benzene from a digested solution of biological materials and the metal-DDTC complexes were collected into a small amount of polystyrene foam produced by lyophilization of the benzene extract after addition of polystyrene. The polystyrene foam was dissolved in benzene and spread on Mylar film. After drying, a polystyrene film containing metal-DDTC complexes was produced on Mylar film, and then the polystyrene film was peeled from the Mylar film. This film was subjected to PIXE analysis. This method was applied to NBS SRM 1572 citrus leaves and a marine macroalgal sample, and 6 trace metals were simultaneously and accurately determined. (author)

  15. An electromagnetically actuated fiber optic switch using magnetized ferromagnetic materials

    Science.gov (United States)

    Pandojirao-S, Praveen; Dhaubanjar, Naresh; Phuyal, Pratibha C.; Chiao, Mu; Chiao, J.-C.

    2008-03-01

    This paper presents the design, fabrication and testing of a fiber optic switch actuated electromagnetically. The ferromagnetic gel coated optical fiber is actuated using external electromagnetic fields. The ferromagnetic gel consists of ferromagnetic powders dispersed in epoxy. The fabrication utilizes a simple cost-effective coating setup. A direct fiberto-fiber alignment eliminates the need for complementary optical parts and the displacement of fiber switches the laser coupling. The magnetic characteristics of magnetized ferromagnetic materials are performed using alternating gradient magnetometer and the magnetic hysteresis curves are measured for different ferromagnetic materials including iron, cobalt, and nickel. Optical fiber switches with various fiber lengths are actuated and their static and dynamic responses for the same volume of ferromagnetic gel are summarized. The highest displacement is 1.345 mm with an input current of 260mA. In this paper, the performance of fiber switches with various coating materials is presented.

  16. Rapid Quench in an Electrostatic Levitator

    Science.gov (United States)

    SanSoucie, Michael P.; Rogers, Jan R.; Matson, Douglas M.

    2016-01-01

    The Electrostatic Levitation (ESL) Laboratory at the NASA Marshall Space Flight Center (MSFC) is a unique facility for investigators studying high-temperature materials. The ESL laboratory's main chamber has been upgraded with the addition of a rapid quench system. This system allows samples to be dropped into a quench vessel that can be filled with a low melting point material, such as a gallium or indium alloy, as a quench medium. Thereby allowing rapid quenching of undercooled liquid metals. Up to eight quench vessels can be loaded into a wheel inside the chamber that is indexed with control software. The system has been tested successfully with samples of zirconium, iron-cobalt alloys, titanium-zirconium-nickel alloys, and a silicon-cobalt alloy. This new rapid quench system will allow materials science studies of undercooled materials and new materials development. In this presentation, the system is described and some initial results are presented.

  17. Submersion Quenching of Undercooled Liquid Metals in an Electrostatic Levitator

    Science.gov (United States)

    SanSoucie, Michael P.; Rogers, Jan R.

    2016-01-01

    The NASA Marshall Space Flight Center (MSFC) electrostatic levitation (ESL) laboratory has a long history of providing materials research and thermophysical property data. The laboratory has recently added a new capability, a rapid quench system. This system allows samples to be dropped into a quench vessel that can be filled with a low melting point material, such as a gallium or indium alloy. Thereby allowing rapid quenching of undercooled liquid metals and alloys. This is the first submersion quench system inside an electrostatic levitator. The system has been tested successfully with samples of zirconium, iron-cobalt alloys, titanium-zirconium-nickel alloys, and silicon-cobalt alloys. This rapid quench system will allow materials science studies of undercooled materials and new materials development, including studies of metastable phases and transient microstructures. In this presentation, the system is described and some initial results are presented.

  18. Current-Voltage Characteristics of the Composites Based on Epoxy Resin and Carbon Nanotubes

    Directory of Open Access Journals (Sweden)

    Iwona Pełech

    2015-01-01

    Full Text Available Polymer composites based on epoxy resin were prepared. Multiwalled carbon nanotubes synthesized on iron-cobalt catalyst were applied as a filler in a polymer matrix. Chlorine or hydroxyl groups were incorporated on the carbon nanotubes surface via chlorination or chlorination followed by hydroxylation. The effect of functionalized carbon nanotubes on the epoxy resin matrix is discussed in terms of the state of CNTs dispersion in composites as well as electrical properties. For the obtained materials current-voltage characteristics were determined. They had a nonlinear character and were well described by an exponential-type equation. For all the obtained materials the percolation threshold occurred at a concentration of about 1 wt%. At a higher filler concentration >2 wt%, better conductivity was demonstrated by polymer composites with raw carbon nanotubes. At a lower filler concentration <2 wt%, higher values of electrical conductivity were obtained for polymer composites with modified carbon nanotubes.

  19. Application of the Taguchi analytical method for optimization of effective parameters of the chemical vapor deposition process controlling the production of nanotubes/nanobeads.

    Science.gov (United States)

    Sharon, Maheshwar; Apte, P R; Purandare, S C; Zacharia, Renju

    2005-02-01

    Seven variable parameters of the chemical vapor deposition system have been optimized with the help of the Taguchi analytical method for getting a desired product, e.g., carbon nanotubes or carbon nanobeads. It is observed that almost all selected parameters influence the growth of carbon nanotubes. However, among them, the nature of precursor (racemic, R or Technical grade camphor) and the carrier gas (hydrogen, argon and mixture of argon/hydrogen) seem to be more important parameters affecting the growth of carbon nanotubes. Whereas, for the growth of nanobeads, out of seven parameters, only two, i.e., catalyst (powder of iron, cobalt, and nickel) and temperature (1023 K, 1123 K, and 1273 K), are the most influential parameters. Systematic defects or islands on the substrate surface enhance nucleation of novel carbon materials. Quantitative contributions of process parameters as well as optimum factor levels are obtained by performing analysis of variance (ANOVA) and analysis of mean (ANOM), respectively.

  20. Synthesis of Single-Walled Carbon Nanotubes: Effects of Active Metals, Catalyst Supports, and Metal Loading Percentage

    Directory of Open Access Journals (Sweden)

    Wei-Wen Liu

    2013-01-01

    Full Text Available The effects of active metals, catalyst supports, and metal loading percentage on the formation of single-walled carbon nanotubes (SWNTs were studied. In particular, iron, cobalt, and nickel were investigated for SWNTs synthesis. Iron was found to grow better-quality SWNTs compared to cobalt and nickel. To study the effect of catalyst supports, magnesium oxide, silicon oxide, and aluminium oxide were chosen for iron. Among the studied supports, MgO was identified to be a suitable support for iron as it produced SWNTs with better graphitisation determined by Raman analysis. Increasing the iron loading decreased the quality of SWNTs due to extensive agglomeration of the iron particles. Thus, lower metal loading percentage is preferred to grow better-quality SWNTs with uniform diameters.

  1. Optimized procedures for manganese-52: Production, separation and radiolabeling

    DEFF Research Database (Denmark)

    Fonslet, Jesper; Tietze, Sabrina; Jensen, Andreas Tue Ingemann

    2017-01-01

    ±0.4×105. An additional AG 1-X8 column was used to remove copper, iron, cobalt and zinc impurities from the prepared 52Mn in 8M HCl. The macrocyclic chelator DOTA was rapidly radiolabeled with 52Mn in aq. ammonium acetate (pH 7.5R.T.) with a radiochemical yield >99% within 1min and was stable for >2 days in bovine serum......Pressed chromium-powder cyclotron targets were irradiated with 16MeV protons, producing 52Mn with average yields of 6.2±0.8MBq/µAh. Separation by solid-phase anion exchange from ethanol-HCl mixtures recovered 94.3±1.7% of 52Mn and reduced the chromium content by a factor of 2.2...

  2. Analysis of powdered milk by PIXE (Proton Induced X-ray Emission)

    International Nuclear Information System (INIS)

    Desales Galeana, G.

    1990-01-01

    The purpose of this work was to establish the conditions to analyze elements of Z>15 in powdered milk samples using the PIXE technique. Ten different commercial samples were analyzed: 2 full-cream, 3 half-cream and 5 for infant feeding. They were all purchased in Toluca City, Mexico. Thick targets were prepared and irradiated with 1.5 and 3 MeV protons beam in Mexico's Nuclear Center Tandem Van de Graff Accelerator. The obtained data were analyzed by two computers programs. Iron, the reference element was analyzed by atomic absorption spectrometry. Concentrations of the following elements: phosphorus, chlorine, potassium, calcium, chrome, iron, cobalt, nickel, copper, zinc, bromine, rubidium, molybdenum and cadmium were evaluated. The concentrations of the first four elements were usually high, whereas those of the other elements remained in some ppm. The experimental conditions set up in this work were suitable for the analysis of powdered milk and can be applied to other organic samples (Author)

  3. Studies of Fe-Co based perovskite cathodes with different A-site cations

    DEFF Research Database (Denmark)

    Kammer Hansen, K.

    2006-01-01

    Iron-cobalt based perovskite cathodes with different A-site cations ((Ln(0.6)Sr(0.4))(0.99)Fe0.8Co0.2O3-delta, where Ln is La, Pr, Sm or Gd) have been synthesised, characterised by a powder XRD, dilatometry, 4-point DC conductivity measurements, and electrochemical impedance spectroscopy (EIS......) on cone shaped electrodes. In addition to this scanning electron microscopy (SEM) was used to characterise the bars. XRD revealed that only the La-containing perovskite was hexagonal. The Pr and Sm perovskites were orthorhombic. The gadolinium-based perovskite was a two phase system consisting...... of an orthorhombic and a cubic perovskite phase. The thermal expansion coefficient (TEC) increased systematically with a decrease in the size of the A-site cation until the gadoliniurn-containing perovskite where the TEC decreases abruptly. The total electric conductivity was the highest for the La-based perovskite...

  4. Energetical and multiscale approaches for the definition of an equivalent stress for magneto-elastic couplings

    International Nuclear Information System (INIS)

    Hubert, Olivier; Daniel, Laurent

    2011-01-01

    A main limitation of most models describing the effect of stress on the magnetic behavior is that they are restricted to uniaxial - tensile or compressive - stress. Nevertheless, stress is multiaxial in most of industrial applications. An idea to overcome the strong limitation of models is to define a fictive uniaxial stress, the equivalent stress, that would change the magnetic behavior in a similar manner than a multiaxial stress. A first definition of equivalent stress, called the deviatoric equivalent stress, is proposed. It is based on an equivalence in magneto-elastic energy. This formulation is first derived for isotropic materials under specific assumptions. An extension to orthotropic media under disoriented magneto-mechanical loading is made. A new equivalent stress expression, called generalized equivalent stress, is then proposed. It is based on an equivalence in magnetization. Inverse identification of equivalent stress is made possible thanks to a strong simplification of the description of the material seen as an assembly of elementary magnetic domains. It is shown that this second proposal is a generalization of the deviatoric expression. Equivalent stress proposals are compared to former proposals and validated using experimental results carried out on an iron-cobalt sheet submitted to biaxial mechanical loading. These results are compared to the predictions obtained thanks to the equivalent stress formulations. The generalized equivalent stress is shown to be a tool able to foresee the magnetic behavior of a large panel of materials submitted to multiaxial stress. - Research highlights: → Classical magneto-elastic models restricted to uniaxial stress. → Stress demonstrated multiaxial in most of industrial applications. → Proposals of deviatoric and generalized equivalent stresses - multidomain modeling. → Experimental validation using iron-cobalt sheet submitted to biaxial loading. → Generalization of former proposals and modeling of

  5. Thermodynamics and kinetics of the formation of rare earth intermetallics

    International Nuclear Information System (INIS)

    Deodhar, S.S.

    1975-01-01

    Heats of reaction of rare earth intermetallics with iron, cobalt and nickel were determined using Differential Thermal Analysis technique. The intermetallic compounds studied were of MgCu 2 type Laves phases and the rare earth elements studied were praseodymium, gadolinium, dyprosium and erbium. The reactions were exothermic and the heats of reaction were generally high. They varied from the low of -2.5 kcal/g mole for Fe 2 Gd to the high of -35.3 kcal/g mole for Ni 2 Er. The magnitudes of heats of reaction were always greater for the intermetallics of heavy rare earth elements. The rare earth intermetallics studied were either ferromagnetic or antiferromagnetic. The variations in the magnetic moments and the heats of reaction with respect to the atomic number of the rare earth elements followed certain trends. The similarities were observed in the trends of two properties. Electronic configuration for the MgCu 2 type rare earth intermetallics is proposed using Engel--Brewer correlation for metallic structures and the structural features of the Laves phase compounds. Kinetics of the reactions between the rare earth elements and iron, cobalt, and nickel was studied. The rate of reaction was diffusion controlled in each case. The Valensi--Carter equation for the diffusion mechanism satisfactorily described the kinetic behavior. The magnitudes of activation energies and frequency factors were determined. The reactions can be characterized by their reaction temperatures since they always begin at definite temperatures. It was observed that the reaction began at a higher temperature if the activation energy for the reaction was high

  6. Native copper in Permian Mudstones from South Devon: A natural analogue of copper canisters for high-level radioactive waste

    International Nuclear Information System (INIS)

    Milodowski, A.E.; Styles, M.T.; Werme, L.; Oversby, V.M.

    2001-01-01

    Native copper (>99.9% Cu) sheets associated with complex uraniferous and vanadiferous concretions in Upper Permian Mudstones from south Devon (United Kingdom) have been studied as a 'natural analogue' for copper canisters designed to be used in the isolation of spent fuel and high-level radioactive wastes (HLW) for deep geological disposal. Detailed analysis demonstrates that the copper formed before the mudstones were compacted. The copper displays complex corrosion and alteration. The earliest alteration was to copper oxides, followed sequentially by the formation of copper arsenides, nickel arsenide and copper sulphide, and finally nickel arsenide accompanied by nickel-copper arsenide, copper arsenide and uranium silicates. Petrographic observations demonstrate that these alteration products also formed prior to compaction. Consideration of the published history for the region indicates that maximum compaction of the rocks will have occurred by at least the Lower Jurassic (i.e. over 176 Ma ago). Since that time the copper sheets have remained isolated by the compacted mudstones and were unaffected by further corrosion until uplift and exposure to present-day surface weathering

  7. Peeled film GaAs solar cell development

    International Nuclear Information System (INIS)

    Wilt, D.M.; Thomas, R.D.; Bailey, S.G.; Brinker, D.J.; DeAngelo, F.L.

    1990-01-01

    Thin film, single crystal gallium arsenide (GaAs) solar cells could exhibit a specific power approaching 700 W/Kg including coverglass. A simple process has been described whereby epitaxial GaAs layers are peeled from a reusable substrate. This process takes advantage of the extreme selectivity (>10 6 ) of the etching rate of aluminum arsenide (AlAs) over GaAs in dilute hydrofloric acid (HF). The intent of this work is to demonstrate the feasibility of using the peeled film technique to fabricate high efficiency, low mass GaAs solar cells. We have successfully produced a peeled film GaAs solar cell. The device, although fractured and missing the aluminum gallium arsenide (Al x Ga 1 - x As) window and antireflective (AR) coating, had a Voc of 874 mV and a fill factor of 68% under AMO illumination

  8. Ion implantation in semiconductor bodies

    International Nuclear Information System (INIS)

    Badawi, M.H.

    1984-01-01

    Ions are selectively implanted into layers of a semiconductor substrate of, for example, semi-insulating gallium arsenide via a photoresist implantation mask and a metallic layer of, for example, titanium disposed between the substrate surface and the photoresist mask. After implantation the mask and metallic layer are removed and the substrate heat treated for annealing purposes. The metallic layer acts as a buffer layer and prevents possible contamination of the substrate surface, by photoresist residues, at the annealing stage. Such contamination would adversely affect the electrical properties of the substrate surface, particularly gallium arsenide substrates. (author)

  9. Space station automation study: Automation requriements derived from space manufacturing concepts,volume 2

    Science.gov (United States)

    1984-01-01

    Automation reuirements were developed for two manufacturing concepts: (1) Gallium Arsenide Electroepitaxial Crystal Production and Wafer Manufacturing Facility, and (2) Gallium Arsenide VLSI Microelectronics Chip Processing Facility. A functional overview of the ultimate design concept incoporating the two manufacturing facilities on the space station are provided. The concepts were selected to facilitate an in-depth analysis of manufacturing automation requirements in the form of process mechanization, teleoperation and robotics, sensors, and artificial intelligence. While the cost-effectiveness of these facilities was not analyzed, both appear entirely feasible for the year 2000 timeframe.

  10. Semiconducting III-V compounds

    CERN Document Server

    Hilsum, C; Henisch, Heinz R

    1961-01-01

    Semiconducting III-V Compounds deals with the properties of III-V compounds as a family of semiconducting crystals and relates these compounds to the monatomic semiconductors silicon and germanium. Emphasis is placed on physical processes that are peculiar to III-V compounds, particularly those that combine boron, aluminum, gallium, and indium with phosphorus, arsenic, and antimony (for example, indium antimonide, indium arsenide, gallium antimonide, and gallium arsenide).Comprised of eight chapters, this book begins with an assessment of the crystal structure and binding of III-V compounds, f

  11. Coherent light scattering from a buried dipole in a high-aperture optical system

    International Nuclear Information System (INIS)

    Vamivakas, A N; Mueller, T; Atatuere, M; Yurt, A; Koeklue, F H; Uenlue, M S

    2011-01-01

    We develop a theoretical formulation to calculate the absolute and differential transmission of a focused laser beam through a high-aperture optical system. The focused field interacts with a point dipole that is buried in a high-index material, and is situated at the Gaussian focus of the focusing and collection two-lens system. The derived expressions account for the vectorial nature of the focused electromagnetic field and the inhomogeneous focal region environment. The results obtained are in agreement with recent resonant light-scattering experiments where the buried emitter is an indium arsenide semiconductor quantum dot in gallium arsenide.

  12. The effect of different solar simulators on the measurement of short-circuit current temperature coefficients

    Science.gov (United States)

    Curtis, H. B.; Hart, R. E., Jr.

    1982-01-01

    Gallium arsenide solar cells are considered for several high temperature missions in space. Both near-Sun and concentrator missions could involve cell temperatures on the order of 200 C. Performance measurements of cells at elevated temperatures are usually made using simulated sunlight and a matched reference cell. Due to the change in bandgap with increasing temperature at portions of the spectrum where considerable simulated irradiance is present, there are significant differences in measured short circuit current at elevated temperatures among different simulators. To illustrate this, both experimental and theoretical data are presented for gallium arsenide cells.

  13. Mechanisms of Current Transfer in Electrodeposited Layers of Submicron Semiconductor Particles

    Science.gov (United States)

    Zhukov, N. D.; Mosiyash, D. S.; Sinev, I. V.; Khazanov, A. A.; Smirnov, A. V.; Lapshin, I. V.

    2017-12-01

    Current-voltage ( I- V) characteristics of conductance in multigrain layers of submicron particles of silicon, gallium arsenide, indium arsenide, and indium antimonide have been studied. Nanoparticles of all semiconductors were obtained by processing initial single crystals in a ball mill and applied after sedimentation onto substrates by means of electrodeposition. Detailed analysis of the I- V curves of electrodeposited layers shows that their behavior is determined by the mechanism of intergranular tunneling emission from near-surface electron states of submicron particles. Parameters of this emission process have been determined. The proposed multigrain semiconductor structures can be used in gas sensors, optical detectors, IR imagers, etc.

  14. Structural phase transition and elastic properties of AnAs (An= Th, U, Np, Pu) compounds at high pressure

    International Nuclear Information System (INIS)

    Aynyas, Mahendra; Arya, B.S.; Srivastava, Vipul; Sanyal, Sankar P.

    2006-01-01

    The high pressure behavior and pressure induced structural phase transition of mono arsenides (AnAs; An = Th, U, Np, Pu) have been investigated by using a three body interaction potential (TBI). This method has been found quite satisfactory in the case of other Rare-Earth compounds. The calculated compression curves of mono-arsenides obtained so have been compared with high pressure X-ray diffraction work. The theoretically predicted phase transition pressure and other structural properties for these compounds agree reasonably well with the measured values. (author)

  15. Variations in first principles calculated defect energies in GaAs and ...

    Indian Academy of Sciences (India)

    Keywords. Ab initio calculations; semi-insulating GaAs; point defects. ... We are focusing on gallium arsenide. .... gallium vacancy in S & L, P et al and N & Z will exist in triple ... gallium antisite defect that include relaxation, a negative. U-effect is ...

  16. Low temperature transport in p-doped InAs nanowires

    DEFF Research Database (Denmark)

    Upadhyay, Shivendra; Jespersen, Thomas Sand; Madsen, Morten Hannibal

    2013-01-01

    We present low temperature electrical measurements of p-type Indium Arsenide nanowires grown via molecular beam epitaxy using Beryllium as a dopant. Growth of p-type wires without stacking faults is demonstrated. Devices in field-effect geometries exhibit ambipolar behavior, and the temperature...

  17. Face to Face The IGBT and its Creator

    Indian Academy of Sciences (India)

    IAS Admin

    HC: At RPI you had the chance to work on Indium Gallium Arsenide (InGaAs) ..... Safe operating area denotes the current and voltage conditions under which ... conditioning, refrigeration and so on, but what is the impact on the environment?

  18. Determination of trace elements in electronic materials by NAA

    International Nuclear Information System (INIS)

    Kobayashi, Kenji

    1986-01-01

    Trace amounts of elements in electronic materials were determined by instrumental neutron activation analysis (INAA), re-activation analysis and substoichiometric radioactivation analysis using gamma-ray spectrometry. Ten elements (Cr, Cu, Fe, Zn, Co, Eu, Ir, Sb, Sc, Tb) in gallium arsenide single crystal were determined by INAA and substoichiometric radioactivation analysis. Trace level of chromium (10 13 atoms/cm 3 ) and zinc (10 14 atoms/cm 3 ) in gallium arsenide single crystal were determined by INAA. The chromium concentrations in horizontal Bridgmangrown semi-insulating gallium arsenide ingot were ranged from 1.2 x 10 16 atoms/cm 3 at seed end to 3.5 x 10 16 atoms/cm 3 at tail end. The trace determinations of iron (10 14 atoms/cm 3 ) and copper (10 14 atoms/cm 3 ) in silicon, gallium arsenide and indium phoshide single crystals were carried out by substoichiometric radioactivation analysis. The reactivation analysis for the multielement determination of indium phosphide single crystal was carried out and nineteen elements were determined simultaneously by gamma-ray spectrometry. Eleven elements (Ag, As, Br, Co, Cr, Fe, K, Mn, Sb, Sc, Zn) in four NIES standard reference materials (Pond Sediment, Chlorella, Mussel and Tea Leaves) and seven elements (Co, Cr, Eu, Fe, Sc, Tb, Yb) in two NBS glasses (SRM-615 and SRM-613) were determined by INAA and substoichiometric radioactivation analysis and the analytical results obtained by the methods were in good agreement with certified values by NIES and NBS. (author)

  19. InP solar cell with window layer

    Science.gov (United States)

    Jain, Raj K. (Inventor); Landis, Geoffrey A. (Inventor)

    1994-01-01

    The invention features a thin light transmissive layer of the ternary semiconductor indium aluminum arsenide (InAlAs) as a front surface passivation or 'window' layer for p-on-n InP solar cells. The window layers of the invention effectively reduce front surface recombination of the object semiconductors thereby increasing the efficiency of the cells.

  20. 500 MHz transient digitizers based on GaAs CCDs

    International Nuclear Information System (INIS)

    Bryman, D.; Cresswell, J.V.; LeNoble, M.; Poutissou, R.

    1990-10-01

    A wide bandwidth transient digitizer based on a recently produced gallium arsenide charged coupled device is under development. The CCDs have 128 pixels and operate at 500 MHz. Initial testing of prototype modules in Experiment 787 at Brookhaven National Laboratory is reported. (Author) (8 refs., 10 figs.)

  1. Tunable structures and modulators for THz light

    Czech Academy of Sciences Publication Activity Database

    Kužel, Petr; Kadlec, Filip

    2008-01-01

    Roč. 9, - (2008), 197-214 ISSN 1631-0705 R&D Projects: GA AV ČR KJB100100512; GA MŠk LC512 Institutional research plan: CEZ:AV0Z10100520 Keywords : terahertz radiation * tunable devices * photonic crystals * strontium titanate * gallium arsenide Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.164, year: 2008

  2. An in-vacuum diffractometer for resonant elastic soft x-ray scattering

    Czech Academy of Sciences Publication Activity Database

    Hawthorn, D.G.; He, F.; Venema, L.; Davis, H.; Achkar, A.J.; Zhang, J.; Sutarto, R.; Wadati, H.; Radi, A.; Wilson, T.; Wright, G.; Shen, K.M.; Geck, J.; Zhang, H.; Novák, Vít; Sawatzky, G.A.

    2011-01-01

    Roč. 82, č. 7 (2011), 073104/1-073104/8 ISSN 0034-6748 Institutional research plan: CEZ:AV0Z10100521 Keywords : gallium arsenide * lanthanum compounds * manganese compounds * neodymium * reflectivity * semiconductor thin films * strontium compounds * X-ray diffraction Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.367, year: 2011

  3. Comparison of charge collection in semiconductor detectors and timing resolution, using a sub-nanosecond transimpedance amplifier

    International Nuclear Information System (INIS)

    Rudge, A.

    1995-01-01

    A transimpedance amplifier, with a risetime of <600 ps and a noise of <1000 RMS electrons in a 500 MHz bandwidth, has been used for comparison of charge collection times in silicon, gallium arsenide and diamond detectors. The use of silicon detectors as trigger counters/hodoscopes is demonstrated, together with measured timing characteristics. (orig.)

  4. Comparison of charge collection in semiconductor detectors and timing resolution, using a sub-nanosecond transimpedance amplifier

    Energy Technology Data Exchange (ETDEWEB)

    Rudge, A. [European Organization for Nuclear Research, Geneva (Switzerland)

    1995-06-01

    A transimpedance amplifier, with a risetime of <600 ps and a noise of <1000 RMS electrons in a 500 MHz bandwidth, has been used for comparison of charge collection times in silicon, gallium arsenide and diamond detectors. The use of silicon detectors as trigger counters/hodoscopes is demonstrated, together with measured timing characteristics. (orig.).

  5. Configurational rearrangements of bistable centers in covalent semiconductors - phase transitions of the second type

    International Nuclear Information System (INIS)

    Ivanyukovich, V.A.; Karas', V.I.; Lomako, V.M.

    1989-01-01

    A new radiation configurational-bistable defect diffring from the known similar defects by the fact that it possessestemperature inversion of states is detected in gallium arsenide. Configurational-bistable rearrangements are shown to be considered as phase transitions of the second type

  6. The 20 and 30 GHz MMIC technology for future space communication antenna system

    Science.gov (United States)

    Anzic, G.; Connolly, D. J.

    1984-10-01

    The development of fully monolithic gallium arsenide receive and transmit modules is described. These modules are slated for phased array antenna applications in future 30/20 gigahertz communications satellite systems. Performance goals and various approaches to achieve them are discussed. The latest design and performance results of components, submodules and modules are presented.

  7. Mining and Metal Pollution: Assessment of Water Quality in the ...

    African Journals Online (AJOL)

    Michael

    2017-12-02

    Dec 2, 2017 ... arsenides and metallic sulphides of As, Au, Cu, Fe,. Zn, Pb and Sb. In gold .... hydroxides of aluminium, iron, manganese and lead. Reactive minerals such ..... seen to form the complex Fe(OH)3, representing 83. % of the total ...

  8. Modulation of fluorescence signals from biomolecules along nanowires due to interaction of light with oriented nanostructures

    DEFF Research Database (Denmark)

    Frederiksen, Rune Schøneberg; Alarcon-Llado, Esther; Madsen, Morten H.

    2015-01-01

    High aspect ratio nanostructures have gained increasing interest as highly sensitive platforms for biosensing. Here, well-defined biofunctionalized vertical indium arsenide nanowires are used to map the interaction of light with nanowires depending on their orientation and the excitation waveleng...

  9. High-performance green flexible electronics based on biodegradable cellulose nanofibril paper

    Science.gov (United States)

    Yei Hwan Jung; Tzu-Hsuan Chang; Huilong Zhang; Chunhua Yao; Qifeng Zheng; Vina W. Yang; Hongyi Mi; Munho Kim; Sang June Cho; Dong-Wook Park; Hao Jiang; Juhwan Lee; Yijie Qiu; Weidong Zhou; Zhiyong Cai; Shaoqin Gong; Zhenqiang Ma

    2015-01-01

    Today’s consumer electronics, such as cell phones, tablets and other portable electronic devices, are typically made of non-renewable, non-biodegradable, and sometimes potentially toxic (for example, gallium arsenide) materials. These consumer electronics are frequently upgraded or discarded, leading to serious environmental contamination. Thus, electronic systems...

  10. Spin-polarized tunneling with GaAs tips in scanning tunneling microscopy

    NARCIS (Netherlands)

    Prins, M.W.J.; Jansen, R.; Kempen, van H.

    1996-01-01

    We describe a model as well as experiments on spin-polarized tunneling with the aid of optical spin orientation. This involves tunnel junctions between a magnetic material and gallium arsenide (GaAs), where the latter is optically excited with circularly polarized light in order to generate

  11. The Effects of Strain on the Electrical Properties of Thin Evaporated Films of Semiconductor Compounds

    Science.gov (United States)

    Steel, G. G.

    1970-01-01

    Reports on project intended to establish how electrical resistance, Hall voltage, and magnetoresistance change when a thin film specimen is subjected to mechanical strain. Found resistance of semiconducting film of indium arsenide and indium antimonide decreases with tension and increases with compression. (LS)

  12. Fast Clock Recovery for Digital Communications

    Science.gov (United States)

    Tell, R. G.

    1985-01-01

    Circuit extracts clock signal from random non-return-to-zero data stream, locking onto clock within one bit period at 1-gigabitper-second data rate. Circuit used for synchronization in opticalfiber communications. Derives speed from very short response time of gallium arsenide metal/semiconductor field-effect transistors (MESFET's).

  13. Spin-dependent transport in metal/semiconductor tunnel junctions

    NARCIS (Netherlands)

    Prins, M.W.J.; Kempen, van H.; Leuken, Van H.; Groot, de R.A.; Roy, van W.; De Boeck, J.

    1995-01-01

    This paper describes a model as well as experiments on spin-polarized tunnelling with the aid of optical spin orientation. This involves tunnel junctions between a magnetic material and gallium arsenide (GaAs), where the latter is optically excited with circularly polarized light in order to

  14. 500 MHz transient digitizers based on GaAs CCDs

    International Nuclear Information System (INIS)

    Bryman, D.A.; Constable, M.; Cresswell, J.V.; Daviel, A.; LeNoble, M.; Mildenberger, J.; Poutissou, R.

    1996-11-01

    A system of 500 MHz transient digitizers based on gallium arsenide resistive gate charged coupled devices has been developed for an experiment studying rare K decays. CCDs with dynamic range of 8-bits and 128 or 320 pixels are used as analog pipelines. The CCD's are driven by a single phase transport system. Data readout and manipulation occurs at 15.6 MHz. (authors)

  15. West Europe Report, Science and Technology

    Science.gov (United States)

    1986-01-16

    according to operational needs in discrete supplies at from 200 to 350 bars. Inventories of the propellants UDMH [unsymmetric dimethylhydrazine] and N5nü...Philips, Siemens and Thomson, on advanced microprocessors, gallium arsenide integrated circuits, microwave components, high- density memories, flat-panel...centers concerned must indicate their desire to associate and regroup themselves according to flexible formulas and variable configurations. In

  16. Evaluation of some emitted elements from selected small industries in Khartoum state

    International Nuclear Information System (INIS)

    Elboraie, Mahir Zein Elabdeen

    1999-08-01

    Employing x-ray fluorescence spectrometry, levels of calcium, chromium, iron, cobalt, nickel, copper, zinc and lead in the indoor aerosol environment of nile painting company, battery charging shop, Khartoum university printing press, Mirghany workshop, Burri power station and Sudanese mint company industries were measured. In the Nile painting company site, calcium, cobalt, nickel and lead exhibited high levels of concentration, whilst chromium, and copper displayed relatively high values with respect to their levels in the control site (Tutti Island). Iron exhibited a level nearly identical to that measured at the control site. No emission of zinc was monitored. In Battery Charging Shop site, Iron and lead, displayed the highest levels recorded, and calcium, chromium, copper, exhibited concentrations relatively high than the corresponding levels in the control site. Cobalt, nickel, and zinc have not been detected. The same trending was found in Khartoum University Printing Press site, with the exception that the level of iron is relatively high with respect to that of control site. In Mirghany Workshop site, calcium, iron, nickel, and zinc measured the highest values. Chromium, copper, and lead measured relatively high values with respect to their concentrations in the control site. No emission of cobalt was monitored. The average concentrations of calcium, iron, copper, and lead in Burri Power Station were nearly the same with that control site. Chromium, cobalt, nickel, and zinc, however, were not detected. In the indoor aerosol of Sudanese Mint Company site, cobalt, nickel, copper, and zinc, measured the highest values, whilst calcium, iron, chromium, and lead, displayed relatively high values with respect to their concentrations in the control site. The average concentrations of the elements under study in the indoor and outdoor aerosols of Sudanese Mint Company do not correlate to each other, but the outdoor measurements nearly resemble to those of the

  17. Development of high Sensitivity Materials for Applications in Magneto-Mechanical Torque Sensor

    Energy Technology Data Exchange (ETDEWEB)

    Shen, Yuping [Iowa State Univ., Ames, IA (United States)

    2003-01-01

    The Matteucci effect, which mainly manifests itself as the change of magnetization of a material with torsional stress, is currently of great technological interest because of the search for magnetic torque sensors. Magnetic torque sensors are important to future improvements of automobiles and industrial robots. It is well known that the magnetic state of a material depends on both the external magnetic field and external stress which causes strain and change in magnetization of the material. The former phenomenon has been well understood in both theory and application. However, the magnetic state dependence of stress is not adequately understood and the experimental data is of limited extent. In this project, the Matteucci effect in iron, cobalt, nickel and permalloy rods has been documented when they were in magnetic remanence status along the axis and nickel ring when they were in remanence status along the circumference. The effect of annealing on the magnetomechanical effect in nickel and the temperature dependence of the magnetomechanical sensitivity has also been examined. Factors related to the sensitivity at equilibrium condition have been theoretically developed. it is found in the experiments that the mechanism of magnetic domain wall movement plays an important role rather than the domain rotation. A higher sensitivity was found by domain wall movement mechanism than that by domain rotation mechanism. However, the domain wall movement will result in more hysteresis than domain wall rotation. The dynamic process of Matteucci effect of iron, cobalt, permally, especially as-fabricated and annealed nickel rods have been examined. A tentative explanation for the difference of these in terms of magnetic domain configuration and domain wall movement was given. As a result, another method of configuring and processing magnetic domains to get a linear magnetomechanical response other than that suggested by Garshelis, which was the basic method before the

  18. Annealing of magnetic nanoparticles for their encapsulation into microcarriers guided by vascular magnetic resonance navigation

    Energy Technology Data Exchange (ETDEWEB)

    Pouponneau, Pierre; Segura, Vincent [Ecole Polytechnique de Montreal (EPM), NanoRobotics Laboratory, Department of Computer and Software Engineering and Institute of Biomedical Engineering (Canada); Savadogo, Oumarou [Ecole Polytechnique de Montreal (EPM), Laboratoire de Nouveaux Materiaux pour l' electrochimie et l' energie (Canada); Leroux, Jean-Christophe [Universite de Montreal, Faculty of Pharmacy (Canada); Martel, Sylvain, E-mail: sylvain.martel@polymtl.ca [Ecole Polytechnique de Montreal (EPM), NanoRobotics Laboratory, Department of Computer and Software Engineering and Institute of Biomedical Engineering (Canada)

    2012-12-15

    Iron, cobalt and iron-cobalt nanoparticle properties, such as diameter, saturation magnetization (Ms), crystal structure, surface composition and stability in physiological solutions, were investigated according to the annealing temperature used prior to their encapsulation into poly(d, l-lactic-co-glycolic acid) (PLGA) microcarriers. These new 60-{mu}m microparticles should exhibit an Ms around 70 emu g{sup -1} to be guided in real time from their intravascular injection site to a tumor with a magnetic resonance imaging scanner. The challenge in the preparation of the nanoparticles consisted in limiting Ms loss by oxidation and the release of metallic ions. It was found that when the annealing temperature reached 650 Degree-Sign C, Fe nanoparticles coalesced, the mean diameter reached (O) 361 {+-} 138 nm and Ms increased to 171 emu g{sup -1}. These nanoparticles exhibited a core of {alpha}-Fe and a shell of Fe{sub 3}O{sub 4}. On the opposite, Co nanoparticle properties were not affected by the annealing temperature: O and Ms were around 120 nm and 140 emu g{sup -1}, respectively. FeCo (60:40, atomic percent) nanoparticles coalesced at an annealing temperature >550 Degree-Sign C, O and Ms reached 217 nm and 213 emu g{sup -1}, respectively. Co and FeCo nanoparticles with a Co atomic proportion >15 % were coated with a graphite shell when the temperature was set to 550 Degree-Sign C. In physiological solution, Fe and Co nanoparticles significantly released more ions than FeCo nanoparticles. After the preparation steps prior to their encapsulation, the Ms of Fe and FeCo nanoparticles decreased by 25 and 3 %, respectively. FeCo-PLGA microparticles possessed a relatively high Ms (73 emu g{sup -1}) while that of Fe-PLGA microparticle (20 emu g{sup -1}) was too low for efficient targeting. The graphite shell was efficient to preserve Ms during the encapsulation.

  19. Investigations on inorganic elements in human lenses of normal and senile cataractous character

    International Nuclear Information System (INIS)

    Oerdoegh, M.; Racz, P.

    1977-01-01

    Some essential trace elements as copper, zinc, iron, cobalt, scandium and rubidium have been measured by neutron activation analysis in normal and different types of senile cataractous lenses. Normal lenses were obtained from eyes enucleated because of tumours of the posterior pole and removed from cadaver eyes in 4 hrs after death. The cataractous lenses with intact capsule were removed by cryoextraction and immediately analysed. The single lenses were dried at 100 deg C to constant weight and always weighed before (wet weight) and after drying (dry weight). Unfortunately, because of the nuclear properties of the analysed elements not all of them could be determined in a single lense, thus three lenses were needed for the determination of eight elements. For the determination of manganese a single lens was irradiated for 6 min, then destroyed in a mixture of conc. sulphuric acid and conc. nitric acid. This was followed by a two-step chemical separation. For the analysis of copper the samples were irradiated for 1 hr, then destroyed as above and the copper was separated in the form of copper-thiocyanate. The long-lived isotopes were measured after 115 hrs irradiation and a cooling for 10 days without destruction of the sample. Tabulated data are given and the results are compared with literature data. (T.G.)

  20. Trace element distribution during the reproductive cycle of female and male spiny and Pacific scallops, with implications for biomonitoring

    International Nuclear Information System (INIS)

    Norum, Ulrik; Lai, Vivian W.-M.; Cullen, William R.

    2005-01-01

    Trace element concentrations and contents in gills, gonad, kidneys, mantle, muscle and remainder during the reproductive cycle of female and male spiny and Pacific scallops, from the Strait of Georgia, BC, Canada, were quantified by using ICPMS. The elements investigated were chromium, manganese, iron, cobalt, nickel, selenium, molybdenum, cadmium, tin and mercury. For all ten elements, the tissue distribution was to some extent influenced by species, sex and reproductive status. The implications of the present study in relation to the design of biomonitoring programmes are: (1) care should be taken to ensure an equal/constant sex composition when making interannual comparisons of pooled samples. Preferably the sexes should be monitored separately. (2) the practice of obtaining pooled samples in the interspawn phase is applicable only to monitoring long-term trends in contaminant levels, while the reproductive status should be heeded when studying short-term changes. (3) the present study confirms that direct temporal or spatial comparisons of absolute accumulated element concentrations are only valid intraspecifically

  1. Secondary cell with orthorhombic alkali metal/manganese oxide phase active cathode material

    Science.gov (United States)

    Doeff, Marca M.; Peng, Marcus Y.; Ma, Yanping; Visco, Steven J.; DeJonghe, Lutgard C.

    1996-01-01

    An alkali metal manganese oxide secondary cell is disclosed which can provide a high rate of discharge, good cycling capabilities, good stability of the cathode material, high specific energy (energy per unit of weight) and high energy density (energy per unit volume). The active material in the anode is an alkali metal and the active material in the cathode comprises an orthorhombic alkali metal manganese oxide which undergoes intercalation and deintercalation without a change in phase, resulting in a substantially linear change in voltage with change in the state of charge of the cell. The active material in the cathode is an orthorhombic structure having the formula M.sub.x Z.sub.y Mn.sub.(1-y) O.sub.2, where M is an alkali metal; Z is a metal capable of substituting for manganese in the orthorhombic structure such as iron, cobalt or titanium; x ranges from about 0.2 in the fully charged state to about 0.75 in the fully discharged state, and y ranges from 0 to 60 atomic %. Preferably, the cell is constructed with a solid electrolyte, but a liquid or gelatinous electrolyte may also be used in the cell.

  2. A perturbed Lennard-Jones chain equation of state for liquid metals

    Energy Technology Data Exchange (ETDEWEB)

    Mousazadeh, M H; Marageh, M Ghanadi [AEOI, JIH Research Laboratory, 11365/8486, Tehran (Iran, Islamic Republic of)

    2006-05-24

    The perturbed Lennard-Jones chain (PLJC) equation of state is formulated based on first-order variational perturbation theory. The model uses two parameters for a monatomic system, segment size, {sigma}, and segment energy, {epsilon}/k. In this work, we employed the PLJC equation to calculate the liquid density of 26 metals, including alkali and alkali earth metals, iron, cobalt, nickel, copper, silver, gold, zinc, cadmium, mercury, aluminium, gallium, indium, thallium, tin, lead, antimony, and bismuth, for which accurate experimental data exist in the literature. The calculations cover a broad range of temperatures ranging from the melting point to close to the critical point and pressures ranging from the vapour-pressure curve up to pressures as high as 2000 bar. The average absolute deviation in the liquid density predicted by the PLJC equation of state in the saturation line compared with experimental data is 1.26%. Also, using the normal melting temperature and liquid density at melting point (T{sub m}, {rho}{sub m}) as input data for the estimation of the equation of state parameters provides a good correlation of liquid density at saturated and compressed pressures.

  3. The detection of magnetotactic bacteria in deep sea sediments from the east Pacific Manganese Nodule Province.

    Science.gov (United States)

    Dong, Yi; Li, Jinhua; Zhang, Wuchang; Zhang, Wenyan; Zhao, Yuan; Xiao, Tian; Wu, Long-Fei; Pan, Hongmiao

    2016-04-01

    Magnetotactic bacteria (MTB) are distributed ubiquitously in sediments from coastal environments to the deep sea. The Pacific Manganese Nodule Province contains numerous polymetallic nodules mainly composed of manganese, iron, cobalt, copper and nickel. In the present study we used Illumina MiSeq sequencing technology to assess the communities of putative MTB in deep sea surface sediments at nine stations in the east Pacific Manganese Nodule Province. A total of 402 sequence reads from MTB were classified into six operational taxonomic units (OTUs). Among these, OTU113 and OTU759 were affiliated with the genus Magnetospira, OTU2224 and OTU2794 were affiliated with the genus Magnetococcus and Magnetovibrio, respectively, OTU3017 had no known genus affiliation, and OTU2556 was most similar to Candidatus Magnetananas. Interestingly, OTU759 was widely distributed, occurring at all study sites. Magnetism measurements revealed that all sediments were dominated by low coercivity, non-interacting single domain magnetic minerals. Transmission electron microscopy confirmed that the magnetic minerals were magnetosomes. Our data suggest that diverse putative MTB are widely distributed in deep sea surface sediments from the east Pacific Manganese Nodule Province. © 2016 Society for Applied Microbiology and John Wiley & Sons Ltd.

  4. Makeup and uses of a basic magnet laboratory for characterizing high-temperature permanent magnets

    Science.gov (United States)

    Niedra, Janis M.; Schwarze, Gene E.

    1991-01-01

    A set of instrumentation for making basic magnetic measurements was assembled in order to characterize high intrinsic coercivity, rare earth permanent magnets with respect to short term demagnetization resistance and long term aging at temperatures up to 300 C. The major specialized components of this set consist of a 13 T peak field, capacitor discharge pulse magnetizer; a 10 in. pole size, variable gap electromagnet; a temperature controlled oven equipped with iron cobalt pole piece extensions and a removable paddle that carries the magnetization and field sensing coils; associated electronic integrators; and sensor standards for field intensity H and magnetic moment M calibration. A 1 cm cubic magnet sample, carried by the paddle, fits snugly between the pole piece extensions within the electrically heated aluminum oven, where fields up to 3.2 T can be applied by the electromagnet at temperatures up to 300 C. A sample set of demagnetization data for the high energy Sm2Co17 type of magnet is given for temperatures up to 300 C. These data are reduced to the temperature dependence of the M-H knee field and of the field for a given magnetic induction swing, and they are interpreted to show the limits of safe operation.

  5. Losses of the elements during dry ashing of plant materials

    International Nuclear Information System (INIS)

    Nonaka, Nobuhiro; Higuchi, Hideo; Hamaguchi, Hiroshi; Tomura, Kenji.

    1981-01-01

    Dry ashing technique has been considered to cause potential errors due to loss of elements by volatilisation or by reaction with the vessel. To obtain an overall view of elemental loss, the dry ashing was applied to the standard reference materials such as Orchard leaves(NBS) and Bamboo leaves. The ashing condition was as follows; The temperature varied from 200 0 C to 800 0 C by stepwise heating and the duration of heating at each temperature was 24 h. Concentrations of 25 elements in a sample were determined by means of atomic absorption spectrometry and neutron activation analysis using a Ge(Li) detector. The results obtained were as follows; (1) The losses for alkali elements were dependent on crucible materials and sample species. The losses increased with temperature and they were serious when a silica dish was used. (2) The loss for mercury was found above 110 0 C and simply increased with temperature. On the other hand, chlorine, bromine, selenium and chromium showed complicated patterns in which the first losses occurred at 200 0 C, no additional losses being observed at each following step of heating between 200 0 C and 450 0 C, and they increased again above 500 0 C. (3) The losses for arsenic and antimony occurred at 200 0 C, but any losses could not be observed above 200 0 C. (4) No losses were detected over the temperature range studied for alkaline earths, rare earths, vanadium, manganese, iron, cobalt, zinc and aluminum. (author)

  6. Fuel rods

    International Nuclear Information System (INIS)

    Adachi, Hajime; Ueda, Makoto

    1985-01-01

    Purpose: To provide a structure capable of measuring, in a non-destructive manner, the releasing amount of nuclear gaseous fission products from spent fuels easily and at a high accuracy. Constitution: In order to confirm the integrity and the design feasibility of a nuclear fuel rod, it is important to accurately determine the amount of gaseous nuclear fission products released from nuclear pellets. In a structure where a plurality of fuel pellets are charged in a fuel cladding tube and retained by an inconel spring, a hollow and no-sealed type spacer tube made of zirconium or the alloy thereof, for example, not containing iron, cobalt, nickel or manganese is formed between the spring and the upper end plug. In the fuel rod of such a structure, by disposing a gamma ray collimator and a gamma ray detector on the extension of the spacer pipe, the gamma rays from the gaseous nuclear fission products accumulated in the spacer pipe can be detected while avoiding the interference with the induction radioactivity from inconel. (Kamimura, M.)

  7. New applications of radio-isotopes in France

    International Nuclear Information System (INIS)

    Leveque, P.; Hours, R.; Martinelli, P.; May, S.; Sandier, J.

    1958-01-01

    By measuring the transmission of a flat beam of thermal neutrons, the moisture content of a parallelepiped shaped soil sample can be measured to ± 4 per cent and the moisture gradient along the longitudinal axis determined. The method permits the determination of chemically bound water and the measurement of diffusion coefficients of water into low hydrogenated materials. By measuring the intensity of fluorescence excited by 13 radiation it is possible to determine the thickness of metal coatings of less than 20 p. for metals of atomic number less than 40. This method has been applied to chromium, manganese, iron, cobalt, nickel, copper and zinc. By using a suitable metal filter it is possible to measure coating thicknesses of metals differing by only one atomic number from the supporting material. By employing labeled cement it is possible to determine the extent or movement of cement grout used for soil stabilization and waterproofing. The kinetic of ion exchange of different ultramarines in aqueous solutions were studied by tracing the movement of labeled ions in the solution or in the exchanger. Values of the diffusion coefficients and activation energies were determined from the exchange studies. (author) [fr

  8. Potentiodynamic polarization assays on magnetic materials for new medical micro-devices

    Energy Technology Data Exchange (ETDEWEB)

    Pouponneau, P. [Ecole Polytechnique de Montreal, PQ (Canada). Nanorobotics Lab; Ecole Polytechnique de Montreal, PQ (Canada). Biomedical Engineering Inst., Laboratory for the Innovation and Analysis of Bioperformance; Savadogo, O.; Napporn, T. [Ecole Polytechnique de Montreal, Montreal, PQ (Canada). Laboratoire de nouveaux materiaux pour l' energie et l' electrochimie; Yahia, L' H. [Ecole Polytechnique de Montreal, PQ (Canada). Biomedical Engineering Inst., Laboratory for the Innovation and Analysis of Bioperformance; Martel, S. [Ecole Polytechnique de Montreal, PQ (Canada). Nanorobotics Lab

    2008-07-01

    This study investigated the corrosion behaviour of a terbium (Tb0.27Dy0.73Fe1.95) alloy and single crystal nickel (Ni-Mn-Ga) alloy smart magnetic materials (SMM), and Vacoflux 17 and Permendur iron-cobalt alloys. Previous studies have shown that the materials demonstrate a high potential for use in wireless medical microdevices controlled by magnetic fields. However, the Tb0.27Dy0.73Fe1.95 alloy has poor corrosion properties due to its high corrosion potential and corrosion current. Corrosion behaviour was investigated using potentiodynamic polarization measurements and scanning electron microscopy. The study showed that the surface of the alloy was impaired by cracks and holes. The single crystal Ni-Mn Ga alloy demonstrated higher corrosion resistance. The SMM were then embedded into a bio-compatible matrix to form composite with the Vacoflux 17 and Permendur alloys. The study showed that while the Vacoflux 17 surface was degraded by cracks and pits, the Permendur surface was uniformly corroded without pitting. The uniform corrosion was attributed to the formation of a stable passive layer. 4 refs., 3 figs.

  9. Long-term sorption of metals is similar among plastic types: implications for plastic debris in aquatic environments.

    Directory of Open Access Journals (Sweden)

    Chelsea M Rochman

    Full Text Available Concerns regarding plastic debris and its ability to accumulate large concentrations of priority pollutants in the aquatic environment led us to quantify relationships between different types of mass-produced plastic and metals in seawater. At three locations in San Diego Bay, we measured the accumulation of nine targeted metals (aluminum, chromium, manganese, iron, cobalt, nickel, zinc, cadmium and lead sampling at 1, 3, 6, 9 and 12 months, to five plastic types: polyethylene terephthalate (PET, high-density polyethylene (HDPE, polyvinyl chloride (PVC, low-density polyethylene (LDPE, and polypropylene (PP. Accumulation patterns were not consistent over space and time, and in general all types of plastic tended to accumulate similar concentrations of metals. When we did observe significant differences among concentrations of metals at a single sampling period or location in San Diego Bay, we found that HDPE typically accumulated lesser concentrations of metals than the other four polymers. Furthermore, over the 12-month study period, concentrations of all metals increased over time, and chromium, manganese, cobalt, nickel, zinc and lead did not reach saturation on at least one plastic type during the entire 12-month exposure. This suggests that plastic debris may accumulate greater concentrations of metals the longer it remains at sea. Overall, our work shows that a complex mixture of metals, including those listed as priority pollutants by the US EPA (Cd, Ni, Zn and Pb, can be found on plastic debris composed of various plastic types.

  10. Long-term sorption of metals is similar among plastic types: implications for plastic debris in aquatic environments.

    Science.gov (United States)

    Rochman, Chelsea M; Hentschel, Brian T; Teh, Swee J

    2014-01-01

    Concerns regarding plastic debris and its ability to accumulate large concentrations of priority pollutants in the aquatic environment led us to quantify relationships between different types of mass-produced plastic and metals in seawater. At three locations in San Diego Bay, we measured the accumulation of nine targeted metals (aluminum, chromium, manganese, iron, cobalt, nickel, zinc, cadmium and lead) sampling at 1, 3, 6, 9 and 12 months, to five plastic types: polyethylene terephthalate (PET), high-density polyethylene (HDPE), polyvinyl chloride (PVC), low-density polyethylene (LDPE), and polypropylene (PP). Accumulation patterns were not consistent over space and time, and in general all types of plastic tended to accumulate similar concentrations of metals. When we did observe significant differences among concentrations of metals at a single sampling period or location in San Diego Bay, we found that HDPE typically accumulated lesser concentrations of metals than the other four polymers. Furthermore, over the 12-month study period, concentrations of all metals increased over time, and chromium, manganese, cobalt, nickel, zinc and lead did not reach saturation on at least one plastic type during the entire 12-month exposure. This suggests that plastic debris may accumulate greater concentrations of metals the longer it remains at sea. Overall, our work shows that a complex mixture of metals, including those listed as priority pollutants by the US EPA (Cd, Ni, Zn and Pb), can be found on plastic debris composed of various plastic types.

  11. New evidence on the composition of mineral grains of native gold

    International Nuclear Information System (INIS)

    Erasmus, C.S.; Sellschop, J.P.F.; Watterson, J.I.W.

    1987-01-01

    The nuclear analytical techniques of instrumental neutron activation and radiochemical neutron activation have been applied to the analysis of native gold from the Precambrian Witwatersrand Sequence and from the Archaen deposits in the Barberton Mountain Land, Murchison Range and Pietersburg region in South Africa. A total of 15 elements were determined in the samples of native gold, namely: scandium, iron, cobalt, nickel, copper, zinc, zirconium, silver, antimony, tellurium, cerium, europium, ytterbium, mercury and thorium. Of these the silver and mercury were determined by the instrumental procedure and the copper was determined after extraction with diethyl dithiocarbamate. The other elements were determined from long-lived isotopes after the removal of silver by dissolution of the gold and precipitation of the silver as silver iodide. The most significant result of this work is the discovery that mercury occurs at the percentage level in native gold from the Witwatersrand (between 1 and 5%), demonstrating the power of the nuclear method in comparison with conventional methods such as optical spectroscopy and the electron microprobe, which had failed to make this discovery. (author)

  12. Reductive-sulfurizing smelting treatment of smelter slag for copper and cobalt recovery

    Directory of Open Access Journals (Sweden)

    Li Y.

    2018-01-01

    Full Text Available Recovery of copper and cobalt from smelter slag using reductive-sulfurizing smelting method was performed in this study. The effects of reductive agent (coke, sulfurizing agent (pyrite, slag modifier (CaO and smelting temperature and duration on the extractive efficiencies of Cu, Co and Fe were discussed. The phase compositions and microstructure of the materials, copper-cobalt matte and cleaned slag were determined. The results showed that copper and cobalt contents in cleaned slag could decrease averagely to 0.18% and 0.071% respectively after cleaning. 91.99% Cu and 92.94% Co and less than 38.73% Fe were recovered from the smelter slag under the optimum conditions: 6 wt.% coke, 20 wt.% pyrite and 6 wt.% CaO addition to the smelter slag, smelting temperature of 1350°C and smelting duration of 3h. The addition of CaO can increase the selectivity of Co recovery. The cleaning products were characterized by XRD and SEM-EDS analysis. The results showed that the main phases of copper-cobalt matte were iron sulfide (FeS, geerite (Cu8S5, iron cobalt sulfide (Fe0.92Co0.08S and Fe-Cu-Co alloy. The cleaned slag mainly comprised fayalite (Fe2SiO4, hedenbergite (CaFe(Si2O6 and magnetite (Fe3O4.

  13. Contrasting Photo-physiological Responses of the Haptophyte Phaeocystis Antarctica and the Diatom Pseudonitzschia sp. in the Ross Sea (Antarctica

    Directory of Open Access Journals (Sweden)

    Sasha Tozzi

    2017-05-01

    Full Text Available The Antarctic is a unique environment in which substantial variations in irradiance occur over a number of time scales, and as a result phytoplankton need to acclimate and adapt to these changes. We conducted field and laboratory manipulations in the Ross Sea, Antarctica to examine photophysiological differences between Phaeocystis antarctica and Pseudonitzschia sp. a diatom that commonly occurrs in the Ross Sea, since these are the two functional groups that dominate abundance and productivity. Both exhibited reduced quantum yields due to high irradiances. P. antarctica, a haptophyte, displays a distinct photophysiological response to irradiance when compared to diatoms. P. antarctica showed a rapid recovery from high light exposure, as indicated by the rapid return to initial, high quantum yields, in contrast to diatoms, which responded more slowly. Absorption cross sections were high in both forms, but those in P. antarctica were significantly higher. Both organisms recovered within 24 h to initial quantum yields, suggesting that high irradiance exposure does not have a permanent effect on these organisms. Among all micronutrient additions (iron, cobalt, zinc and vitamin B12, only iron additions resulted in rapid impacts on quantum yields. Iron limitation also can result in reduced photosynthetic efficiency. Understanding these photophysiologial responses and the impact of oceanographic conditions provides constraints on modeling efforts of photosynthesis and primary productivity in the Antarctic.

  14. Trace and macro elements in the femoral bone as indicators of long-term environmental exposure to toxic metals in European brown bear (Ursus arctos) from Croatia.

    Science.gov (United States)

    Lazarus, Maja; Orct, Tatjana; Reljić, Slaven; Sedak, Marija; Bilandžić, Nina; Jurasović, Jasna; Huber, Đuro

    2018-05-21

    We explored the long-term accumulation of aluminium, strontium, cadmium and lead in the compact and trabecular bone of the femoral epiphysis, metaphysis and diaphysis in 41 brown bears (Ursus arctos) from Croatia. Also, we assessed their influence on macro and trace elements (sodium, magnesium, phosphorus, potassium, calcium, manganese, iron, cobalt, copper, zinc and barium) in bears' bone. There were no sex differences in element levels in general, while age was associated with bone length and levels of all elements, except for cadmium. Elements had different levels depending on the part of the bone sampled. More pronounced differences were observed between the compact and trabecular regions, with higher levels of majority of elements found in compact bone. Moderate to high associations (Spearman coefficient, r S  = 0.59-0.97) were confirmed between calcium and potassium, magnesium, phosphorus, manganese, cobalt, zinc, strontium and lead. Lead levels in the bone were below those known to cause adverse health effects, but in 4 of 41 animals they exceeded baseline levels for domestic animals. The femoral bone of the brown bear reflected the accumulative nature of lead and strontium well, as it did the impairment of bone-forming essential element levels associated with these two elements. However, the distribution pattern of elements along the bone was not uniform, so additional care should be taken when choosing on the part of the bone sampled.

  15. Application of trace element analysis to determine trace element concentrations in the field of medicine

    International Nuclear Information System (INIS)

    Kasperek, K.; Feinendegen, L.E.

    1976-01-01

    Applied trace elements research in medicine requires a sensitive and efficient technique of trace elements analysis such as, e.g., neutron activation analysis. Essential trace elements act as stabilisators (iron in haem), structural elements (silicium in fibrous tissue), in hormones (iodine in thyroid hormone), in vitamins (cobalt in vitamin B 12), and in enzymes. Most of the essential trace elements act as coenzymes or in coenzymes or directly as metabolic catalysators. For example, selenium deficiency in PKU and maple syrup patients receiving dietary treatment can be detected by determining the selenium content of the serum, while low selenium values in the whole blood indicate liver cirrhosis. Acrodermatitis enteropathica can be diagnosed by determinig zinc in the serum, and pancreatic insufficiency by determining zinc in the pancreatic juice. Zinc also plays a part in disturbances of growth, in the healing of wounds, and in the insulin metabolism. Cobalt is important in some types of anaemia and in myocardiopathies. Trace elements are also necessary in the treatment of diseases, e.g. iron cobalt in some types of anaemia, and zinc in the delayed healing of wounds in the postoperative phase and in acrodermatitis enteropathica. Chromium is now being tested for the treatment of diabetes mellitus, and fluorides may be of interest in the treatment of osteoporosis. Finally, trace elements are important in the aetiology of acute poisoning, in nutrition, and in environmental protection. (orig./AK) [de

  16. Fe-, Co-, and Ni-Loaded Porous Activated Carbon Balls as Lightweight Microwave Absorbents.

    Science.gov (United States)

    Li, Guomin; Wang, Liancheng; Li, Wanxi; Xu, Yao

    2015-11-16

    Porous activated carbon ball (PACB) composites impregnated with iron, cobalt, nickel and/or their oxides were synthesized through a wet chemistry method involving PACBs as the carrier to load Fe(3+), Co(2+), and Ni(2+) ions and a subsequent carbothermal reduction at different annealing temperatures. The results show that the pyrolysis products of nitrates and/or the products from the carbothermal reduction are embedded in the pores of the PACBs, with different distributions, resulting in different crystalline phases. The as-prepared PACB composites possessed high specific surface areas of 791.2-901.5 m(2)  g(-1) and low densities of 1.1-1.3 g cm(-3). Minimum reflection loss (RL) values of -50.1, -20.6, and -20.4 dB were achieved for Fe-PACB (annealed at 500 °C), Co-PACB (annealed at 800 °C), and Ni-PACB (annealed at 800 °C) composites, respectively. Moreover, the influence of the amount of the magnetic components in the PACB composites on the microwave-absorbing performances was investigated, further confirming that the dielectric loss was the primary contributor to microwave absorption. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  17. a Moessbauer Effect and Fenske-Hall Molecular Orbital Study of the Electronic Properties of Organoiron Clusters.

    Science.gov (United States)

    Buhl, Margaret Linn

    The electronic properties of trinuclear iron, tetranuclear iron butterfly, iron-cobalt, and iron-copper clusters have been studied experimentally at 78K by the Mossbauer effect and theoretically by Fenske-Hall molecular orbital calculations. The Mossbauer effect isomer shift is very sensitive to the differences in the iron s-electron densities in these clusters and, as expected, decreases as the sum of the iron 4s Mulliken population and the Clementi and Raimondi effective nuclear charge increases. The molecular orbital wave functions and the Mulliken atomic charges are used to calculate the electric field gradient at the metal nuclei and the iron Mossbauer effect quadrupole splittings. The valence contribution was found to be the major component of the electric field gradient in all the clusters studied. In general the calculated value of Delta E_ {Q} is larger than the observed value, as a result of neglect of the valence Sternheimer factor, R. The metal charge depends upon its electronegativity and upon the nature of its Lewis base ligands. The carbonyl ligand carbon charge becomes more positive as the metal electronegativity increases. The oxygen charge becomes more negative as the anionic cluster charge increases, and in so doing, yields the maximum anionic charge separation. The electronic properties of the terminal carbonyl ligands are similar to those of carbon monoxide, whereas the electronic properties of the bridging carbonyl ligands are similar to those of the carbonyl group found in aldehydes and ketones.

  18. Application of XRF and AAS for the elemental analysis of biological samples as monitors to occupational exposure

    International Nuclear Information System (INIS)

    Abdelrahman, Wafa Salih

    1999-12-01

    In the present study, hair and urine samples were collected from selected group of workers in industrial areas, and control group was collected from individuals resident far from contaminated areas. Air samples were collected form indoors atmosphere of these industries. Sudan Mint Company and Mirghani workshop are selected as a possible contaminated cities in Khartoum and Omdurman cities. X-ray fluorescence and atomic absorption techniques were applied to the analysis of the biological and air samples. AXIL computer program was used for fitting the collected spectra. The concentration of calcium, chromium, iron, cobalt, nickel, copper, zinc, bromine, and lead were evaluated. The result revealed that zinc and copper showed highest concentration in hair and air samples, while zinc was not detected in urine. In Mirghani workshop calcium, chromium, iron and zinc shows the highest values in air and hair samples also, zinc was not detected in urine. The correlation between the elemental content of the biological and environmental samples confirm that these elements can reach to the human body.(Author)

  19. Structure of new Al-Si based RQ systems with potentially enhanced stiffness

    International Nuclear Information System (INIS)

    Zigo, J.; Svec, P.; Janickovic, D.; Janotova, I.; Matko, I.; Svec, P. Sr.

    2014-01-01

    Amorphous and nanocrystalline metallic systems prepared by rapid quenching of melt are interesting for many unique properties. Mechanical properties are among the most important ones. Rapid quenching of metallic melt can enhance mechanical properties of material, compared to metal alloys prepared by conventional metallurgy. Aluminium as one of most accessible light-weight metals has wide range of applications as construction material. Alloying aluminium with another element can significantly improve mechanical properties. Reasonable choice for alloying element in terms of sustaining light-weight nature of the material is silicon. Dissolving silicon in aluminium can be achieved, even with the aid of rapid quenching, only up to few weight percent. Increasing the content of dissolved silicon is possible by adding other alloying components. Candidates with respect to low specific mass are transition elements of 4"t"h period (from scandium to zinc). In our experimental study, we have chosen alloying of Al-Si with transition elements (T) iron, cobalt and nickel. Composition of the investigated systems was Al_8_0_-_xT_xSi_2_0 where T = Fe, Co, Ni and x = 0, 5 and 10. (authors)

  20. Analysis of heavy metals and minerals elements in the turmeric using Total-Reflection X-ray Fluorescence analysis technique and Atomic Absorption Spectrometry

    International Nuclear Information System (INIS)

    Andriamisetra, V.M.Z.

    2014-01-01

    Currently, many studies demonstrate anti-cancer and anti-inflammatory benefits of turmeric. The aims of this work is to perform analysis of metals such as calcium, chromium, manganese, iron, cobalt, nickel, copper, zinc, arsenic, bromine, rubidium, strontium, cadmium and lead in the turmeric collected from various places in Madagascar. The analysis by total reflection X-ray fluorescence technique is used to determine the concentrations of heavy metals, while the atomic absorption spectrometry is used for the determination of trace elements. Analysis results show that the concentration of calcium in the turmeric is very high, its average concentration is 1025.8 mg.kg -1 . The average concentrations of manganese, of copper and of iron are respectively 44.7 mg.kg -1 ; 19.7 mg.kg -1 and 53.6 mg.kg -1 . The average concentrations of zinc, of rubidium and of strontium are respectively 17.3 mg.kg -1 ; 35.2 mg.kg -1 and 21.7 mg.kg -1 [fr

  1. Characterization of nanomaterials with transmission electron microscopy

    KAUST Repository

    Anjum, Dalaver H.

    2016-08-01

    The field of nanotechnology is about research and development on materials whose at least one dimension is in the range of 1 to 100 nanometers. In recent years, the research activity for developing nano-materials has grown exponentially owing to the fact that they offer better solutions to the challenges faced by various fields such as energy, food, and environment. In this paper, the importance of transmission electron microscopy (TEM) based techniques is demonstrated for investigating the properties of nano-materials. Specifically the nano-materials that are investigated in this report include gold nano-particles (Au-NPs), silver atom-clusters (Ag-ACs), tantalum single-atoms (Ta-SAs), carbon materials functionalized with iron cobalt (Fe-Co) NPs and titania (TiO2) NPs, and platinum loaded Ceria (Pt-CeO2) Nano composite. TEM techniques that are employed to investigate nano-materials include aberration corrected bright-field TEM (BF-TEM), high-angle dark-field scanning TEM (HAADF-STEM), electron energy-loss spectroscopy (EELS), and BF-TEM electron tomography (ET). With the help presented of results in this report, it is proved herein that as many TEM techniques as available in a given instrument are essential for a comprehensive nano-scale analysis of nanomaterials.

  2. Transition Metal Oxides for the Oxygen Reduction Reaction: Influence of the Oxidation States of the Metal and its Position on the Periodic Table.

    Science.gov (United States)

    Toh, Rou Jun; Sofer, Zdeněk; Pumera, Martin

    2015-11-16

    Electrocatalysts have been developed to meet the needs and requirements of renewable energy applications. Metal oxides have been well explored and are promising for this purpose, however, many reports focus on only one or a few metal oxides at once. Herein, thirty metal oxides, which were either commercially available or synthesized by a simple and scalable method, were screened for comparison with regards to their electrocatalytic activity towards the oxygen reduction reaction (ORR). We show that although manganese, iron, cobalt, and nickel oxides generally displayed the ability to enhance the kinetics of oxygen reduction under alkaline conditions compared with bare glassy carbon, there is no significant correlation between the position of a metal on the periodic table and the electrocatalytic performance of its respective metal oxides. Moreover, it was also observed that mixed valent (+2, +3) oxides performed the poorest, compared with their respective pure metal oxides. These findings may be of paramount importance in the field of renewable energy. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  3. The impact of engineered cobalt, iron, nickel and silver nanoparticles on soil bacterial diversity under field conditions

    International Nuclear Information System (INIS)

    Shah, Vishal; Collins, Daniel; Shah, Shreya; Walker, Virginia K

    2014-01-01

    Our understanding of how engineered nanoparticles (NPs) migrate through soil and affect microbial communities is scarce. In the current study we examined how metal NPs, including those from the iron triad (iron, cobalt and nickel), moved through pots of soil maintained under winter field conditions for 50 days, when mesophilic bacteria may not be dividing. Based on total metal analysis, cobalt and nickel were localized in the top layer of soil, even after exposure to high precipitation and freeze–thaw cycles. In contrast, a bimodal distribution of silver was observed. Due to high endogenous levels of iron, the migration pattern of these NPs could not be determined. Pyrosequence analysis of the bacterial communities revealed that there was no significant engineered NP-mediated decline in microbial richness. However, analysis of individual genera showed that Sphingomonas and Lysobacter were represented by fewer sequences in horizons containing elevated metal levels whereas there was an increase in the numbers of Flavobacterium and Niastella. Collectively, the results indicate that along with the differential migration behavior of NPs in the soil matrix, their impact on soil bacterial diversity appears to be dependent on environmental parameters. (paper)

  4. Strontium, cessium, and cerium radioisotope concentration in water of superficial reservoirs as determined by their accumulation in alga Cladophora glomerata

    International Nuclear Information System (INIS)

    Piskunov, L.I.; Gushchin, V.M.

    1979-01-01

    An indirect method of measuring concentrations of strontium-90,cesium-137 and cerium-144 in water is considered. The method is bsed on the accumulation of the nuclides in Cladophora glomerata Kutz, a fresh-water alga. During 10 days in the end of July, 1975, water samples (20 l) and alga samples (about 1 kg) were taken at 14 locations more or less evenly distributed along the bank of reservoir. Some locations were in coves or issues of small rivers so that almost all morphometric features of the reservoir were taken into account. The samples were processed and radiochemically analyzed, including the radiometry of standard techniques. The counting time was so selected that the statistical error did not exceed 10 %. The radionuclide concentration was calculated per unit weight of sample (pCi/l or pCi/kg of natural alga biomass). The method may be of particular importance for those radionuclides that are rapidly absorbed by bottom sediments and at the same time intensively accumulated by the hydrobios (radioisotopes of iron, cobalt, zinc, yttrium, zirconium and some others)

  5. Effects of Metal Micro and Nano-Particles on hASCs: An In Vitro Model.

    Science.gov (United States)

    Palombella, Silvia; Pirrone, Cristina; Rossi, Federica; Armenia, Ilaria; Cherubino, Mario; Valdatta, Luigi; Raspanti, Mario; Bernardini, Giovanni; Gornati, Rosalba

    2017-08-03

    As the knowledge about the interferences of nanomaterials on human staminal cells are scarce and contradictory, we undertook a comparative multidisciplinary study based on the size effect of zero-valent iron, cobalt, and nickel microparticles (MPs) and nanoparticles (NPs) using human adipose stem cells (hASCs) as a model, and evaluating cytotoxicity, morphology, cellular uptake, and gene expression. Our results suggested that the medium did not influence the cell sensitivity but, surprisingly, the iron microparticles (FeMPs) resulted in being toxic. These data were supported by modifications in mRNA expression of some genes implicated in the inflammatory response. Microscopic analysis confirmed that NPs, mainly internalized by endocytosis, persist in the vesicles without any apparent cell damage. Conversely, MPs are not internalized, and the effects on hASCs have to be ascribed to the release of ions in the culture medium, or to the reduced oxygen and nutrient exchange efficiency due to the presence of MP agglomerating around the cells. Notwithstanding the results depicting a heterogeneous scene that does not allow drawing a general conclusion, this work reiterates the importance of comparative investigations on MPs, NPs, and corresponding ions, and the need to continue the thorough verification of NP and MP innocuousness to ensure unaffected stem cell physiology and differentiation.

  6. Concentration levels and spatial distribution of sulphur and metals in fine-grained sediments in western Finland

    Directory of Open Access Journals (Sweden)

    M. ÅSTRÖM

    2008-12-01

    Full Text Available On the coastal plains of Finland, widespread Holocene marine and lacustrine sediments have developed into acid sulphate soil as a result of extensive artificial drainage for agricultural purposes. This has caused a variety of environmental problems. The aim of this study was to determine the concentration levels and spatial distribution of sulphur, carbon and metals [titanium, vanadium, chromium, manganese (Mn, iron, cobalt (Co, nickel (Ni, copper (Cu, zinc (Zn] in these sediments, in order to increase the geochemical understanding of the parent materials from which acid sulphate soil develops. Sediment samples were collected at 317 sites from a depth of 1.5–3 m. While the sediments have high S (sulphide concentrations (median = 0.54% and thus a strong acidification potential, they carry transition metals mainly in smallsized silicates close to “background concentrations” far below contamination limits. The previously documented extensive release of Co, Cu, Mn, Ni and Zn from oxidised and acidified layers of these sediments (i.e. acid sulphate soil is thus not explained by anomalously high natural or anthropogenic metal concentrations of the soils/sediments, but by an inherent highly mobile metal pool. Spatial-distribution maps highlight areas of elevated S and Mn concentrations, where it is likely that ditching and subsequent oxidation will result in an exceptionally large release of protons and Mn respectively.;

  7. Study of Syngas Conversion to Light Olefins by Response Surface Methodology

    Directory of Open Access Journals (Sweden)

    Hossein Atashi

    2013-01-01

    Full Text Available The effect of adding MgO to a precipitated iron-cobalt-manganese based Fischer-Tropsch synthesis (FTS catalyst was investigated via response surface methodology. The catalytic performance of the catalysts was examined in a fixed bed microreactor at a total pressure of 1–7 bar, temperature of 280–380°C, MgO content of 5–25% and using a syngas having a H2 to CO ratio equal to 2.The dependence of the activity and product distribution on MgO content, temperature, and pressure was successfully correlated via full quadratic second-order polynomial equations. The statistical analysis and response surface demonstrations indicated that MgO significantly influences the CO conversion and chain growth probability as well as ethane, propane, propylene, butylene selectivity, and alkene/alkane ratio. A strong interaction between variables was also evidenced in some cases. The decreasing effect of pressure on alkene to alkane ratio is investigated through olefin readsorption effects and CO hydrogenation kinetics. Finally, a multiobjective optimization procedure was employed to calculate the best amount of MgO content in different reactor conditions.

  8. Volume reduction of reactor wastes by spray drying

    International Nuclear Information System (INIS)

    Gay, R.L.; Grantham, L.F.; McKenzie, D.E.

    1983-01-01

    Three simulated low-level reactor wastes were dried using a spray dryer-baghouse system. The three aqueous feedstocks were sodium sulfate waste characteristic of a BWR, boric acid waste characteristic of a PWR, and a waste mixture of ion exchange resins and filter aid. These slurries were spiked with nonradioactive iron, cobalt, and manganese (representing corrosion products) and nonradioactive cesium and iodine (representing fission products). The throughput for the 2.1-m-diameter spray dryer and baghouse system was 160-180 kg/h, which is comparable to the requirements for a full-scale commercial installation. A free-flowing, dry product was produced in all of the tests. The volume reduction factor ranged from 2.5 to 5.8; the baghouse decontamination factor was typically in the range of 10 3 to 10 4 . Using an overall system decontamination factor of 10 6 , the activity of the off-gas was calculated to be one to two orders of magnitude less than the nuclide release limit of the major active species, Cs-137

  9. The effect of electrodes on 11 acene molecular spin valve: Semi-empirical study

    Science.gov (United States)

    Aadhityan, A.; Preferencial Kala, C.; John Thiruvadigal, D.

    2017-10-01

    A new revolution in electronics is molecular spintronics, with the contemporary evolution of the two novel disciplines of spintronics and molecular electronics. The key point is the creation of molecular spin valve which consists of a diamagnetic molecule in between two magnetic leads. In this paper, non-equilibrium Green's function (NEGF) combined with Extended Huckel Theory (EHT); a semi-empirical approach is used to analyse the electron transport characteristics of 11 acene molecular spin valve. We examine the spin-dependence transport on 11 acene molecular junction with various semi-infinite electrodes as Iron, Cobalt and Nickel. To analyse the spin-dependence transport properties the left and right electrodes are joined to the central region in parallel and anti-parallel configurations. We computed spin polarised device density of states, projected device density of states of carbon and the electrode element, and transmission of these devices. The results demonstrate that the effect of electrodes modifying the spin-dependence behaviours of these systems in a controlled way. In Parallel and anti-parallel configuration the separation of spin up and spin down is lager in the case of iron electrode than nickel and cobalt electrodes. It shows that iron is the best electrode for 11 acene spin valve device. Our theoretical results are reasonably impressive and trigger our motivation for comprehending the transport properties of these molecular-sized contacts.

  10. Synthesis and characterization of nanosized lithium manganate and its derivatives

    Science.gov (United States)

    Iqbal, Muhammad Javed; Zahoor, Sabia

    Spinel lithium manganese oxide, LiMn 2O 4 and its derivatives are prepared by the sol-gel method. The lattice constant of the pure material is calculated as 8.23 Å. Different transition metal cations of chromium, iron, cobalt, nickel, copper and zinc (0.05 and 0.15 M) are doped in place of manganese in the LiMn 2O 4. X-ray powder diffraction data show that the spinel framework preserved its integrity upon doping. Formation of a single phase and the purity of the samples are confirmed by X-ray powder diffraction (XRD) and Fourier-transform infrared spectroscopy (FTIR). The crystallite size of the samples is calculated by use of the Scherrer formula and is found to be within a range of 43-66 nm. The electrical conductivity of the samples is determined over a temperature range of 200-300 K by means of four-point probe method. An increasing trend of conductivity with increase in temperature is noted for all the samples. The parent compound LiMn 2O 4 has a conductivity value of 3.47 × 10 -4 ohm -1 cm -1 at room temperature. This value increases on doping with the above-mentioned transition metal cations.

  11. Synthesis and characterization of nanosized lithium manganate and its derivatives

    Energy Technology Data Exchange (ETDEWEB)

    Iqbal, Muhammad Javed; Zahoor, Sabia [Department of Chemistry, Quaid-i-Azam University, Islamabad 45320 (Pakistan)

    2007-02-25

    Spinel lithium manganese oxide, LiMn{sub 2}O{sub 4} and its derivatives are prepared by the sol-gel method. The lattice constant of the pure material is calculated as 8.23 Aa. Different transition metal cations of chromium, iron, cobalt, nickel, copper and zinc (0.05 and 0.15 M) are doped in place of manganese in the LiMn{sub 2}O{sub 4}. X-ray powder diffraction data show that the spinel framework preserved its integrity upon doping. Formation of a single phase and the purity of the samples are confirmed by X-ray powder diffraction (XRD) and Fourier-transform infrared spectroscopy (FTIR). The crystallite size of the samples is calculated by use of the Scherrer formula and is found to be within a range of 43-66 nm. The electrical conductivity of the samples is determined over a temperature range of 200-300 K by means of four-point probe method. An increasing trend of conductivity with increase in temperature is noted for all the samples. The parent compound LiMn{sub 2}O{sub 4} has a conductivity value of 3.47 x 10{sup -4} ohm{sup -1} cm{sup -1} at room temperature. This value increases on doping with the above-mentioned transition metal cations. (author)

  12. Drawing the geometry of 3d transition metal-boron pairs in silicon from electron emission channeling experiments

    CERN Document Server

    Silva, Daniel; Wahl, Ulrich; Martins Correia, Joao; Augustyns, Valerie; De Lemos Lima, Tiago Abel; Granadeiro Costa, Angelo Rafael; David Bosne, Eric; Castro Ribeiro Da Silva, Manuel; Esteves De Araujo, Araujo Joao Pedro; Da Costa Pereira, Lino Miguel

    2016-01-01

    Although the formation of transition metal-boron pairs is currently well established in silicon processing, the geometry of these complexes is still not completely understood. We investigated the lattice location of the transition metals manganese, iron, cobalt and nickel in n- and p+-type silicon by means of electron emission channeling. For manganese, iron and cobalt, we observed an increase of sites near the ideal tetrahedral interstitial position by changing the doping from n- to p+-type Si. Such increase was not observed for Ni. We ascribe this increase to the formation of pairs with boron, driven by Coulomb interactions, since the majority of iron, manganese and cobalt is positively charged in p+-type silicon while Ni is neutral. We propose that breathing mode relaxation around the boron ion within the pair causes the observed displacement from the ideal tetrahedral interstitial site. We discuss the application of the emission channeling technique in this system and, in particular, how it provides insi...

  13. Application of trace element analysis to determine trace element concentrations in the field of medicine. [Neutrons

    Energy Technology Data Exchange (ETDEWEB)

    Kasperek, K; Feinendegen, L E

    1976-01-01

    Applied trace elements research in medicine requires a sensitive and efficient technique of trace elements analysis, such as neutron activation analysis. Essential trace elements act as stabilizators (iron in haem), structural elements (silicon in fibrous tissue), in hormones (iodine in thyroid hormone), in vitamins (cobalt in vitamin B 12), and in enzymes. Most of the essential trace elements act as coenzymes or in coenzymes or directly as metabolic catalyzers. For example, selenium deficiency in PKU and maple syrup patients receiving dietary treatment can be detected by determining the selenium content of the serum, while low selenium values in the whole blood indicate liver cirrhosis. Acrodermatitis enteropathica can be diagnosed by determinig zinc in the serum, and pancreatic insufficiency by determining zinc in the pancreatic juice. Zinc also plays a part in disturbances of growth, in the healing of wounds, and in the insulin metabolism. Cobalt is important in some types of anaemia and in myocardiopathies. Trace elements are also necessary in the treatment of diseases, e.g. iron cobalt in some types of anaemia, and zinc in the delayed healing of wounds in the postoperative phase and in acrodermatitis enteropathica. Chromium is now being tested for the treatment of diabetes mellitus, and fluorides may be of interest in the treatment of osteoporosis. Finally, trace elements are important in the aetiology of acute poisoning, in nutrition, and in environmental protection.

  14. Metallic artifacts in magnetic resonance imaging

    International Nuclear Information System (INIS)

    Abe, Eiji; Okuyama, Koichiro; Ishikawa, Noriyuki; Hongo, Michio; Sato, Kozo; Sashi, Ryuji; Ishikawa, Eijiro.

    1995-01-01

    Seven metallic implants with different content of magnetic materials were compared in terms of the degree of MRI artifact. The degree of artifact well correlated with the total content of iron and cobalt than the total content of ferromagnets (iron, cobalt, nickel). No significant difference was observed regarding artifact among 4 titanium alloys containing very small amount of ferromagnet (0.058%-2.5%). Pedicle screws were made from different alloys in the same shape. Those screws were inserted into the swine vertebrae and artifact was evaluated by MRI. The degree of artifact was SUS316 (stainless steel)>MP-35N (cobalt alloy)>Ti-6AI-4V (titanium alloy), 1.5 Tesla>0.5 Tesla as for magnetic intensity, and T2 (gradient echo)>T2 (long SE)>proton density>T1 as for exposure condition. The condition of the site screw was inserted in the vertebral canal was detectable by T1-weighted images of titanium alloy and cobalt alloy in 0.5 Tesla and T1-weighted images of titanium alloy in 1.5 Tesla. (S.Y)

  15. Determination of antimony by using a quartz atom trap and electrochemical hydride generation atomic absorption spectrometry

    Energy Technology Data Exchange (ETDEWEB)

    Menemenlioglu, Ipek; Korkmaz, Deniz [Department of Chemistry, Middle East Technical University, 06531 Ankara (Turkey); Ataman, O. Yavuz [Department of Chemistry, Middle East Technical University, 06531 Ankara (Turkey)], E-mail: ataman@metu.edu.tr

    2007-01-15

    The analytical performance of a miniature quartz trap coupled with electrochemical hydride generator for antimony determination is described. A portion of the inlet arm of the conventional quartz tube atomizer was used as an integrated trap medium for on-line preconcentration of electrochemically generated hydrides. This configuration minimizes transfer lines and connections. A thin-layer of electrochemical flow through cell was constructed. Lead and platinum foils were employed as cathode and anode materials, respectively. Experimental operation conditions for hydride generation as well as the collection and revolatilization conditions for the generated hydrides in the inlet arm of the quartz tube atomizer were optimized. Interferences of copper, nickel, iron, cobalt, arsenic, selenium, lead and tin were examined both with and without the trap. 3{sigma} limit of detection was estimated as 0.053 {mu}g l{sup -1} for a sample size of 6.0 ml collected in 120 s. The trap has provided 18 fold sensitivity improvement as compared to electrochemical hydride generation alone. The accuracy of the proposed technique was evaluated with two standard reference materials; Trace Metals in Drinking Water, Cat CRM-TMDW and Metals on Soil/Sediment 4, IRM-008.

  16. Method of separating short half-life radionuclides from a mixture of radionuclides

    Science.gov (United States)

    Bray, L.A.; Ryan, J.L.

    1999-03-23

    The present invention is a method of removing an impurity of plutonium, lead or a combination thereof from a mixture of radionuclides that contains the impurity and at least one parent radionuclide. The method has the steps of (a) insuring that the mixture is a hydrochloric acid mixture; (b) oxidizing the acidic mixture and specifically oxidizing the impurity to its highest oxidation state; and (c) passing the oxidized mixture through a chloride form anion exchange column whereupon the oxidized impurity absorbs to the chloride form anion exchange column and the {sup 229}Th or {sup 227}Ac ``cow`` radionuclide passes through the chloride form anion exchange column. The plutonium is removed for the purpose of obtaining other alpha emitting radionuclides in a highly purified form suitable for medical therapy. In addition to plutonium, lead, iron, cobalt, copper, uranium, and other metallic cations that form chloride anionic complexes that may be present in the mixture are removed from the mixture on the chloride form anion exchange column. 8 figs.

  17. STANFORD: Highly polarized SLC electron beams

    International Nuclear Information System (INIS)

    Anon.

    1993-01-01

    Full text: Using specialized photocathodes made with 'strained' gallium arsenide, physicists at the Stanford Linear Accelerator Center (SLAC) have generated electron beams with polarizations in excess of 60 percent a year ahead of schedule. Together with recent luminosity increases, this breakthrough will have a major impact on the physics output of the Stanford Linear Collider (SLC). Beam polarization was almost tripled using photocathodes in which a gallium arsenide layer was grown epitaxially over a substrate of gallium arsenide phosphide. The mismatch between these two layers deforms the crystal structure and removes a degeneracy in the valence band structure, permitting selective optical pumping of one unique spin state. Whereas conventional gallium arsenide photocathodes are limited to 50 percent polarization because of this degeneracy (and realistic cathodes fall substantially below this theoretical limit), such strained crystal lattices have the potential to yield polarizations close to 100 percent. Polarization enhancement with strained lattices was first demonstrated in 1991 by a SLAC/Wisconsin/ Berkeley group (May 1991, page 6) with a 71 percent polarization in a laboratory experiment. More recently this group has achieved polarization in excess of 90 percent, reported last November at the Nagoya Spin Symposium. (In a complementary development, a Japanese KEK/ Nagoya/KEK obtains polarized beams using a 'superlattice' - May 1991, page 4.) The 1993 SLC run, the strained gallium arsenide photocathode technique's debut in an operating particle accelerator, has proved to be a resounding, unqualified success - as have physics experiments on the Z particles produced by the highly polarized beam. A conservative approach was called for, due to concerns about possible charge saturation effects. A relatively thick (0.3 micron) gallium arsenide layer was used for the photocathode in the SLC polarized electron source. With a titanium

  18. Multi-spectral optical absorption in substrate-free nanowire arrays

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Junpeng; Chia, Andrew; Boulanger, Jonathan; LaPierre, Ray, E-mail: lapierr@mcmaster.ca [Department of Engineering Physics, McMaster University, 1280 Main St. West, Hamilton, Ontario L8S 4L7 (Canada); Dhindsa, Navneet; Khodadad, Iman; Saini, Simarjeet [Department of Electrical and Computer Engineering, University of Waterloo, 200 University Ave West, Waterloo, Ontario N2L 3G1 (Canada); Waterloo Institute of Nanotechnology, University of Waterloo, 200 University Ave West, Waterloo, Ontario N2L 3G1 (Canada)

    2014-09-22

    A method is presented of fabricating gallium arsenide (GaAs) nanowire arrays of controlled diameter and period by reactive ion etching of a GaAs substrate containing an indium gallium arsenide (InGaP) etch stop layer, allowing the precise nanowire length to be controlled. The substrate is subsequently removed by selective etching, using the same InGaP etch stop layer, to create a substrate-free GaAs nanowire array. The optical absorptance of the nanowire array was then directly measured without absorption from a substrate. We directly observe absorptance spectra that can be tuned by the nanowire diameter, as explained with rigorous coupled wave analysis. These results illustrate strong optical absorption suitable for nanowire-based solar cells and multi-spectral absorption for wavelength discriminating photodetectors. The solar-weighted absorptance above the bandgap of GaAs was 94% for a nanowire surface coverage of only 15%.

  19. Coupled Photonic Crystal Cavity Array Laser

    DEFF Research Database (Denmark)

    Schubert, Martin

    in the quadratic lattice. Processing techniques are developed and optimized in order fabricate photonic crystals membranes in gallium arsenide with quantum dots as gain medium and in indium gallium arsenide phosphide with quantum wells as gain medium. Several key issues in process to ensure good quality....... The results are in good agreement with standard coupled mode theory. Also a novel type of photonic crystal structure is proposed called lambda shifted cavity which is a twodimensional photonic crystal laser analog of a VCSEL laser. Detailed measurements of the coupled modes in the photonic crystals...... with quantum dots are carried out. In agreement with a simple gain model the structures do not show stimulated emission. The spectral splitting due to the coupling between single cavities as well as arrays of cavities is studied theoretically and experimentally. Lasing is observed for photonic crystal cavity...

  20. Study and characterization of semi-conductor materials III-V for their applications to the ionizing radiation detection

    International Nuclear Information System (INIS)

    Moulin, H.

    1989-01-01

    This work is the study of photoconduction in volume of gallium arsenide and of indium phosphide doped with iron for their applications to X-ray detection which is carried out directly in the material. After having recalled the physical characterization of materials and the principle of photoconduction, we describe two informatic simulations. The first supposes the spatial uniformity of the electric field on the semiconductor, the second takes the spatial and temporal variations of the field into consideration. Then we show the advantage of a first irradiation to neutrons of the photoconductors. With the gallium arsenide there is swiftness improvement of the detectors to the detriment of the sensitivity. The second part studies first the characterizations in the obscurity of the photoconductors according to the electric polarization field and to the neutron dose they received before and then their characterizations under X radiation. 77 refs., 221 figs., 33 tabs., 6 photos., 3 annexes

  1. Solar-Electrochemical Power System for a Mars Mission

    Science.gov (United States)

    Withrow, Colleen A.; Morales, Nelson

    1994-01-01

    This report documents a sizing study of a variety of solar electrochemical power systems for the intercenter NASA study known as 'Mars Exploration Reference Mission'. Power systems are characterized for a variety of rovers, habitation modules, and space transport vehicles based on requirements derived from the reference mission. The mission features a six-person crew living on Mars for 500 days. Mission power requirements range from 4 kWe to 120 kWe. Primary hydrogen and oxygen fuel cells, regenerative hydrogen and oxygen fuel cells, sodium sulfur batteries advanced photovoltaic solar arrays of gallium arsenide on germanium with tracking and nontracking mechanisms, and tent solar arrays of gallium arsenide on germanium are evaluated and compared.

  2. Accurate determination of light elements by charged particle activation analysis

    International Nuclear Information System (INIS)

    Shikano, K.; Shigematsu, T.

    1989-01-01

    To develop accurate determination of light elements by CPAA, accurate and practical standardization methods and uniform chemical etching are studied based on determination of carbon in gallium arsenide using the 12 C(d,n) 13 N reaction and the following results are obtained: (1)Average stopping power method with thick target yield is useful as an accurate and practical standardization method. (2)Front surface of sample has to be etched for accurate estimate of incident energy. (3)CPAA is utilized for calibration of light element analysis by physical method. (4)Calibration factor of carbon analysis in gallium arsenide using the IR method is determined to be (9.2±0.3) x 10 15 cm -1 . (author)

  3. Properties of GaAs:Cr-based Timepix detectors

    Science.gov (United States)

    Smolyanskiy, P.; Bergmann, B.; Chelkov, G.; Kotov, S.; Kruchonak, U.; Kozhevnikov, D.; Mora Sierra, Y.; Stekl, I.; Zhemchugov, A.

    2018-02-01

    The hybrid pixel detector technology brought to the X-ray imaging a low noise level at a high spatial resolution, thanks to the single photon counting. However, silicon as the most widespread detector material is marginally sensitive to photons with energies above 30 keV. Therefore, the high-Z alternatives to silicon such as gallium arsenide and cadmium telluride are increasingly attracting attention of the community for the development of X-ray imaging systems. The results of our investigations of the Timepix detectors bump bonded to sensors made of gallium arsenide compensated by chromium (GaAs:Cr) are presented in this work. The following properties are most important from the practical point of view: the IV characteristics, the charge transport characteristics, photon detection efficiency, operational stability, homogeneity, temperature dependence, as well as energy and spatial resolution are considered. The applicability of these detectors for spectroscopic X-ray imaging is discussed.

  4. Metamaterial-Enhanced Nonlinear Terahertz Spectroscopy

    Directory of Open Access Journals (Sweden)

    Zhang X.

    2013-03-01

    Full Text Available We demonstrate large nonlinear terahertz responses in the gaps of metamaterial split ring resonators in several materials and use nonlinear THz transmission and THz-pump/THz-probe spectroscopy to study the nonlinear responses and dynamics. We use the field enhancement in the SRR gaps to initiate high-field phenomena at lower incident fields. In vanadium dioxide, we drive the insulator-to-metal phase transition with high-field THz radiation. The film conductivity increases by over two orders of magnitude and the phase transition occurs on a several picosecond timescale. In gallium arsenide, we observe high-field transport phenomena, including mobility saturation and impact ionization. The carrier density increases by up to ten orders of magnitude at high fields. At the highest fields, we demonstrate THz-induced damage in both vanadium dioxide and gallium arsenide.

  5. Inter-granular current in iron-oxypnictide superconductors

    International Nuclear Information System (INIS)

    Tamegai, T.; Tsuchiya, Y.; Nakajima, Y.; Kamihara, Y.; Hosono, H.

    2010-01-01

    Inter- and intragranular currents, J c inter and J c intra , in LaFePO 0.94 F 0.06 polycrystalline sample are evaluated by measuring the remanent-state field profile using magneto-optical imaging method. Obtained images show the absence of magnetic field modulation associated with the weak-link nature of grain boundaries, indicating that J c inter and J c intra are comparable in magnitude in contrast to other iron-arsenide superconductors. J c inter is estimated to be 2 x 10 4 A/cm 2 in the limit of T = 0 K, which is larger than the values in other iron-arsenide superconductors. Implication of these J c behavior is discussed in relation with possible pairing symmetries.

  6. Surface temperature measurements for ion-bombarded Si and GaAs at 1.0 to 2.0 MeV

    International Nuclear Information System (INIS)

    Lowe, L.F.; Kennedy, J.K.; Davies, D.E.; Deane, M.L.; Eyges, L.J.

    1975-01-01

    Surface temperatures of ion-bombarded silicon and gallium arsenide have been measured using an infrared detector. Ion beams of N + , N + 2 , O + , O + 2 , C + , CO + , and H + were used at energies from 1--2.0 MeV and at current densities up to 12 μAcenter-dotcm/sup -2/. No temperature dependence was found on ion species, energy, or current. The change in temperature depended only on beam power, target material, and sample mounting technique. With proper mounting temperature increases of 20 degreeC for silicon and 65 degreeC for gallium arsenide were observed for a beam power density of 1.0 Wcenter-dotcm/sup -2/

  7. High-performance green flexible electronics based on biodegradable cellulose nanofibril paper.

    Science.gov (United States)

    Jung, Yei Hwan; Chang, Tzu-Hsuan; Zhang, Huilong; Yao, Chunhua; Zheng, Qifeng; Yang, Vina W; Mi, Hongyi; Kim, Munho; Cho, Sang June; Park, Dong-Wook; Jiang, Hao; Lee, Juhwan; Qiu, Yijie; Zhou, Weidong; Cai, Zhiyong; Gong, Shaoqin; Ma, Zhenqiang

    2015-05-26

    Today's consumer electronics, such as cell phones, tablets and other portable electronic devices, are typically made of non-renewable, non-biodegradable, and sometimes potentially toxic (for example, gallium arsenide) materials. These consumer electronics are frequently upgraded or discarded, leading to serious environmental contamination. Thus, electronic systems consisting of renewable and biodegradable materials and minimal amount of potentially toxic materials are desirable. Here we report high-performance flexible microwave and digital electronics that consume the smallest amount of potentially toxic materials on biobased, biodegradable and flexible cellulose nanofibril papers. Furthermore, we demonstrate gallium arsenide microwave devices, the consumer wireless workhorse, in a transferrable thin-film form. Successful fabrication of key electrical components on the flexible cellulose nanofibril paper with comparable performance to their rigid counterparts and clear demonstration of fungal biodegradation of the cellulose-nanofibril-based electronics suggest that it is feasible to fabricate high-performance flexible electronics using ecofriendly materials.

  8. Monolithic Microwave Integrated Circuit (MMIC) technology for space communications applications

    Science.gov (United States)

    Connolly, Denis J.; Bhasin, Kul B.; Romanofsky, Robert R.

    1987-01-01

    Future communications satellites are likely to use gallium arsenide (GaAs) monolithic microwave integrated-circuit (MMIC) technology in most, if not all, communications payload subsystems. Multiple-scanning-beam antenna systems are expected to use GaAs MMIC's to increase functional capability, to reduce volume, weight, and cost, and to greatly improve system reliability. RF and IF matrix switch technology based on GaAs MMIC's is also being developed for these reasons. MMIC technology, including gigabit-rate GaAs digital integrated circuits, offers substantial advantages in power consumption and weight over silicon technologies for high-throughput, on-board baseband processor systems. For the more distant future pseudomorphic indium gallium arsenide (InGaAs) and other advanced III-V materials offer the possibility of MMIC subsystems well up into the millimeter wavelength region. All of these technology elements are in NASA's MMIC program. Their status is reviewed.

  9. The geology of the Collins Bay uranium deposit, Saskatchewan

    International Nuclear Information System (INIS)

    Jones, B.E.

    1980-01-01

    The Collins Bay deposit lies within the Churchill Province on the western edge of the Wollaston lithostructural domain where it underlies the eastern edge of the Helikian Athabasca Formation. It is 6 miles north-northeast of the Rabbit Lake mine. Two principal zones of uranium mineralization are described. The A zone, a partly eroded, high-grade pod of metal oxide and arsenides sheathed by clay-like minerals, which trends north-northeast and lies under 25 to 40 feet of water; and the B zone, which lies 6 000 ft south of the A, subcrops under till cover and is a partly eroded zone composed of metal oxide and arsenides which occur within variably altered Athabasca Formation. The deposit is typical of the unconformity-type uranium-nickel deposits of the Athabasca Basin. Observed features fit well with the diagenetic-hydrothermal model for such deposts. (auth)

  10. MOCVD process technology for affordable, high-yield, high-performance MESFET structures. Phase 3: MIMIC

    Science.gov (United States)

    1993-01-01

    Under the MIMIC Program, Spire has pursued improvements in the manufacturing of low cost, high quality gallium arsenide MOCVD wafers for advanced MIMIC FET applications. As a demonstration of such improvements, Spire was tasked to supply MOCVD wafers for comparison to MBE wafers in the fabrication of millimeter and microwave integrated circuits. In this, the final technical report for Spire's two-year MIMIC contract, we report the results of our work. The main objectives of Spire's MIMIC Phase 3 Program, as outlined in the Statement of Work, were as follows: Optimize the MOCVD growth conditions for the best possible electrical and morphological gallium arsenide. Optimization should include substrate and source qualification as well as determination of the optimum reactor growth conditions; Perform all work on 75 millimeter diameter wafers, using a reactor capable of at least three wafers per run; and Evaluate epitaxial layers using electrical, optical, and morphological tests to obtain thickness, carrier concentration, and mobility data across wafers.

  11. Geology and mineralogy of the Cu-Ni-Co-U ore deposits at Talmessi and Meskani, Central Iran

    International Nuclear Information System (INIS)

    Tarkian, M.; Bock, W.D.; Neumann, M.

    1983-01-01

    Polymetallic hydrothermal veins and impregnations carry copper-iron sulphides (bornite, chalcopyrite, digenite, chalcocite) and nickel-cobalt arsenides (niccolite, rammelsbergite, safflorite, skutterudite) with bismuth and uranium as well as some copper arsenides (domeykite, koutekite etc.) in two dormant mines in the Anarak District. The geological and tectonic framework and the mineral associations of both occurrences have been investigated in detail. Both mineralization can be attributed to Tertiary magmatism, but were deposited in two temporally distinct periods. The older copper sulphide minerealization is structurally controlled by pre-middle Eocene tectronics and is linked to Eocene shoshonitic volcanism. The second, younger nickel-cobalt-silver-bismuth-uranium mineralization might be attributed to a granitic magmatism linked to a Miocene phase of movement. (Authors)

  12. Organometallic compounds of the 2-6 group elements of periodic system as perspective substances for microelectrnics

    International Nuclear Information System (INIS)

    Fedorov, V.A.

    1986-01-01

    Results of investigating methods of preparation and analysis of organometallic compounds (OMC) of the 2B-6B group elements, behaviour of microimpurities in the process of their complete purification, physical-chemical properties for developing rational flowsheets of OMC purification are presented. Results of microimpurities quantitative transition from OMC to gallium arsenide epitaxial layers are presented. Prospects for OMC application in microelectronics are discussed

  13. Super-Planckian Thermophotovoltaics Without Vacuum Gaps

    Science.gov (United States)

    Mirmoosa, M. S.; Biehs, S.-A.; Simovski, C. R.

    2017-11-01

    We introduce the concept of a thermophotovoltaic system whose emitter is separated from the photovoltaic cell by an intermediate thick slab of gallium arsenide. Owing to the engineered structure of the emitter (a multilayer structure of negative- and positive-ɛ layers) together with a high refractiveindex and transparency of the intermediate slab, we achieve a super-Planckian and frequency-selective spectrum of radiative heat transfer which is desirable for the efficient performance of thermophotovoltaic systems.

  14. Space and Missile Systems Center Standard: Technical Requirements for Electronic Parts, Materials, and Processes used in Space Vehicles

    Science.gov (United States)

    2013-04-12

    glass or oxide passivation over junctions . 4.3 Screening (100 percent). Screening (100 percent) shall be in accordance with section 1400 for the JAN...75 VCE = 75 IC = 75 VCE = 75 IC = 75 Hetero - junction Bipolar Transistor Gallium Arsenide 3/ 105 125 N/A N/A 75 75 Current...HDBK-339 Custom Large Scale Integrated Circuit Development and Acquisition for Space Vehicles MIL-STD-403C Preparation for and Installation of

  15. Neutron activation determination of phosphorus and sulfur in semiconductor materials by 32P-isotope

    International Nuclear Information System (INIS)

    Nikolaev, A.V.; Gol'dshtejn, M.M.; Gil'bert, Eh.N.; Verevkin, G.V.; Yudelevich, I.G.

    1977-01-01

    A neutron-activation method has been developed for determining phosphorus and sulphur in germanium, gallium, gallium arsenide, and silicon structures using 32 P isotope. The dioctyl-sulphoxide (DOSO) extraction of phosphoric molybdenum acid (PMA) has been used to separate 32 P in a radiochemically pure form. Correction factors have been calculated due to the 2nd order interference on 30 Si nuclei in determining phosphorus in silicon for various irradiation times and at various cadmium proportions

  16. Proceedings of the Fiber Optics in the Nuclear Environment Symposium 25-27 March 1980. Volume II. Radiation Physics,

    Science.gov (United States)

    1980-04-30

    800 900 1000 Wavelength (nm) 4. Comparison of material dispersion characteristic between Corning and ITT graded index fiber. 170 _0 10 e 1060 mn Corning...Accelerator (REBA) subjected this device and conmercially available photodiodes (made from silicon, germanium, and indium gallium arsenide phosphide ) to...of wavelength and is shown in Fig. 2. Since approximately one-third of the incident light is reflected at the top surface due to index of refraction

  17. 1997 IEEE/LEOS Summer Topical Meeting on Gallium Nitride Materials, Processing and Devices Held in Montreal, Quebec, Canada on 11-15 August 1997

    Science.gov (United States)

    1998-01-01

    refractive index differences in the two branches, their respective dispersion curves will intersect at a certain wavelength, according to our design...wavelengths, DBRs are usually grown lattice- matched to InP using quaternary and ternary phosphide alloys in spite of the low refractive in- dex...validating the refractive index model. In a third step, mirrors based on arsenide-antimonide materials were designed to operate at 1.3 ^.m

  18. Space-Based Solar Power System Architecture

    Science.gov (United States)

    2012-12-01

    to this thesis, “the Boeing 702 offers a range of power up to 18 kW. Dual and triple -junction gallium arsenide solar cells enable such high power...CONCLUSIONS ........................................................................................................85 A. KEY POINTS AND...USAF. Without the proper starting point and frame of reference, this thesis would not have been possible. Thank you to everyone who had an influence on

  19. Space station automation study. Automation requirements derived from space manufacturing concepts. Volume 1: Executive summary

    Science.gov (United States)

    1984-01-01

    The two manufacturing concepts developed represent innovative, technologically advanced manufacturing schemes. The concepts were selected to facilitate an in depth analysis of manufacturing automation requirements in the form of process mechanization, teleoperation and robotics, and artificial intelligence. While the cost effectiveness of these facilities has not been analyzed as part of this study, both appear entirely feasible for the year 2000 timeframe. The growing demand for high quality gallium arsenide microelectronics may warrant the ventures.

  20. Synthesis and characterization of actinide metal compounds formed by combustion

    International Nuclear Information System (INIS)

    Behrens, R.G.; King, M.A.

    1985-01-01

    This paper briefly describes the results of attempts to synthesize arsenides, phosphides, and antimonides of uranium and thorium using Self-Propagating High-Temperature Synthesis (SHS) techniques. This paper first summarizes the chemistry and thermodynamics of these chemical systems, describes SHS synthesis techniques, and then describes the results of the syntheses using data from powder x-ray diffraction, metallographic, and electron microprobe analyses

  1. Tritium-Powered Radiation Sensor Network

    Science.gov (United States)

    2015-09-01

    Photomultiplier Tube, Scintillator, Geiger counter, Zigbee, Wireless Network, Radiation detector, Dirty Bomb 16. SECURITY CLASSIFICATION OF: 17...operational lifetime of 150 years. Persistent sensing of the environment with vibration and radiation (electromagnetic [ EM ], acoustic, gamma, etc.) in...Transportation E-field electric field EH electron-hole EM electromagnetic GaAs gallium arsenide GPS global positioning system InGaP indium gallium

  2. Terahertz Technology for Defense and Security-Related Applications

    OpenAIRE

    Iwaszczuk, Krzysztof; Jepsen, Peter Uhd; Heiselberg, Henning

    2012-01-01

    Denne afhandling omhandler udvalgte aspekter af terahertz (THz) teknologi med potentiale i forsvars- og sikkerheds-relaterede applikationer. En ny metode til samtidig dataopsamling i tidsopløst THz spektroskopi eksperimenter er blevet udviklet. Denne teknik demonstreres ved bestemmelse af fladekonduktiviteten af fotogenererede ladningsbrere i semiisolerende gallium arsenid. En sammenligning med resultater opnået ved hjælp af en standard dataopsamlingsprocedure viser at den nye metode minimere...

  3. Thermionic photovoltaic energy converter

    Science.gov (United States)

    Chubb, D. L. (Inventor)

    1985-01-01

    A thermionic photovoltaic energy conversion device comprises a thermionic diode mounted within a hollow tubular photovoltaic converter. The thermionic diode maintains a cesium discharge for producing excited atoms that emit line radiation in the wavelength region of 850 nm to 890 nm. The photovoltaic converter is a silicon or gallium arsenide photovoltaic cell having bandgap energies in this same wavelength region for optimum cell efficiency.

  4. TEM EDS analysis of epitaxially-grown self-assembled indium islands

    Directory of Open Access Journals (Sweden)

    Jasmine Sears

    2017-05-01

    Full Text Available Epitaxially-grown self-assembled indium nanostructures, or islands, show promise as nanoantennas. The elemental composition and internal structure of indium islands grown on gallium arsenide are explored using Transmission Electron Microscopy (TEM Energy Dispersive Spectroscopy (EDS. Several sizes of islands are examined, with larger islands exhibiting high (>94% average indium purity and smaller islands containing inhomogeneous gallium and arsenic contamination. These results enable more accurate predictions of indium nanoantenna behavior as a function of growth parameters.

  5. Potential means of support for materials processing in space. A history of government support for new technology

    Science.gov (United States)

    Mckannan, E. C.

    1983-01-01

    Development of a given technology for national defense and large systems developments when the task is too large or risky for entrepreneurs, yet is clearly in the best interest of the nation are discussed. Advanced research to identify areas of interest was completed. Examples of commercial opportunities are the McDonnell-Douglas Corporation purification process for pharmaceutical products and the Microgravity Research Associates process for growing gallium arsenide crystals in space.

  6. The growth of materials processing in space - A history of government support for new technology

    Science.gov (United States)

    Mckannan, E. C.

    1983-01-01

    Development of a given technology for national defense and large systems developments when the task is too large or risky for entrepreneurs, yet is clearly in the best interest of the nation are discussed. Advanced research to identify areas of interest was completed. Examples of commercial opportunities are the McDonnell-Douglas Corporation purification process for pharmaceutical products and the Microgravity Research Associates process for growing gallium arsenide crystals in space.

  7. Low power laser irradiation does not affect the generation of signals in a sensory receptor

    Energy Technology Data Exchange (ETDEWEB)

    Lundeberg, T.; Zhou, J.

    1989-01-01

    The effect of low power Helium-Neon (He-Ne) and Gallium-Arsenide (Ga-As) laser on the slowly adapting crustacean stretch receptor was studied. The results showed that low power laser irradiation did not affect the membrane potential of the stretch receptor. These results are discussed in relation to the use of low power laser irradiation on the skin overlaying acupuncture points in treatment of pain syndrome.

  8. Investigation and Development of Advanced Surface Microanalysis Techniques and Methods

    Science.gov (United States)

    1983-04-01

    California 94402 and Stephen L. Grube Watkins-Johnson 440 Kings Village Road Scotts Valley, California 95066 as published in Analytical Chemistry , 1985, 57...34 E. Silberg , T. Y. Chang, E. A. Caridi, C. A. Evans Jr. and C. J. Hitzman in Gallium Arsenide and Related Compounds 1982, 10th International Symposium...Spectrometry," P. K. Chu and S. L. Grube, Analytical Chemistry . 13. "Direct Lateral and In-Depth Distributional Analysis for Ionic - Contaminants in

  9. High-Temperature Superconductivity in Doped BaFe2As2

    International Nuclear Information System (INIS)

    Martin, Marianne

    2011-01-01

    This thesis provides a detailed look on the synthesis, structural features and physical properties of iron arsenides. Especially the properties of BaFe 2 As 2 and the solid solutions (Ba 1-x K x )Fe 2 As 2 , (Ba 1-x Sr x )Fe 2 As 2 and BaFe 2 (As 1-x P x ) 2 which were all synthesized by solid state reactions by heating mixtures of the elements, were intensively investigated.

  10. Effect of ion-beam gettering on the GaAs transistor structure parameters under neutron irradiation

    International Nuclear Information System (INIS)

    Obolenskij, S.V.; Skupov, V.D.

    2000-01-01

    It is established that the neutron irradiation negative effect on the parameters of the field transistors with the Schottky shut-off on the basis of the epitaxial gallium arsenide is essentially reduced when the argon ions are preliminary implanted into structure on the substrate side. The above effect is explained through remotely controlled gettering by ion irradiation of admixtures and defects in the transistor active areas related with origination of deep levels under the neutron fluence [ru

  11. Low Level (Sub Threshold), Large Spot Laser Irradiations of the Foveas of Macaca Mulatta.

    Science.gov (United States)

    1981-11-01

    spherules. In a portion of the block containing the macula a degenerating patch is seen, displaying considerable edema, with pyknotic and missing nuclei...6 Peripheral areas 11 Macula 11 Eye # 3 M31 2KD 15 (enucleated 7 days after focal irradiation jby gallium arsenide laser). Control areas 15 Neodymium...laser irradiations peripheral areas 23 Macula 28 TABLE OF CONTENTS continued Page Eye # 5 M443 2JD Patched Eye 32 Most areas 32 area nasal to optic disc

  12. Effect of antimony substitution in iron pnictide compounds

    OpenAIRE

    Schmidt, D.; Braun, H. F.

    2015-01-01

    In the present study we have examined the effect of negative chemical pressure in iron pnictides. We have synthesized substitution series replacing arsenic by antimony in a number of 1111- and 122-iron arsenides and present their crystallographic and physical properties. The SDW transition temperature in LaFeAs$_{\\mathrm{1-x}}$Sb$_{\\mathrm{x}}$O decreases with increasing antimony content, while the superconducting transition temperature in LaFeAs$_{\\mathrm{1-x}}$Sb$_{\\mathrm{x}}$O$_{\\mathrm{0...

  13. Unconstrained Heterogeneous Colloidal Quantum Dots Embedded in GaAs/GaSb Nanovoids

    Science.gov (United States)

    2014-04-17

    hexadecylamine ( HDA ), and 5 mL of TOP were added to a three-neck flask, which was then degassed in a vacuum and heated to 130 C for 1.5 hours. Next...arsenide GaSb – gallium antimonide HDA – hexadecylamine HDD – hexadecanediol HR-SEM – high-resolution scanning electron microscope HR-TEM – high

  14. Manhattan Project Technical Series The Chemistry of Uranium (I) Chapters 1-10

    International Nuclear Information System (INIS)

    Rabinowitch, E. I.; Katz, J. J.

    1946-01-01

    This constitutes Chapters 1 through 10. inclusive, of The Survey Volume on Uranium Chemistry prepared for the Manhattan Project Technical Series. Chapters are titled: Nuclear Properties of Uranium; Properties of the Uranium Atom; Uranium in Nature; Extraction of Uranium from Ores and Preparation of Uranium Metal; Physical Properties of Uranium Metal; Chemical Properties of Uranium Metal; Intermetallic Compounds and Alloy systems of Uranium; the Uranium-Hydrogen System; Uranium Borides, Carbides, and Silicides; Uranium Nitrides, Phosphides, Arsenides, and Antimonides.

  15. Experimental study on the production of high density electron bunches from a GaAs photocathode

    International Nuclear Information System (INIS)

    Calabrese, R.; Masoli, F.; Gong, J.M.; Guidi, V.; Tecchio, L.

    1991-01-01

    In order to obtain a high charge, low emittance electron source, useful for FEL electron injector and for e + e - collider experiments, we performed a test experiment on a gallium arsenide photocathode, activated by negative electron affinity technique and illuminated with a 10 ns long laser pulse of 532 nm wavelength. We measured a maximum charge delivered, at relatively low potentials, of about 18 nC/bunch. The mean lifetime is greater than 60 h. (orig.)

  16. Results from the high efficiency solar panel experiment flown on CRRES

    International Nuclear Information System (INIS)

    Ray, K.P.; Mullen, E.G.; Trumble, T.M.

    1993-01-01

    This paper presents results from the High Efficiency Solar Panel Experiment (HESP) flown on the Combined Release and Radiation Effects Satellite (CRRES). The on-orbit solar cell degradation is correlated with the proton and electron environments. Comparisons between gallium arsenide germanium (GaAs/Ge) and silicon (Si) solar cells are presented, and results from three different annealing methods of like GaAs solar cells are compared

  17. Situation and perspectives of the development of investigation on photovoltage conversion of solar energy in Kazakhstan

    International Nuclear Information System (INIS)

    Mansurov, Z.A.; Taurbaev, T.I.; Mikhailov, L.V.; Bychkov, S.G.

    1997-01-01

    The article presents the talk on the research and development on photovoltaic conversion of solar energy in Kazakhstan given at the International Workshop on applied solar energy held in Tashkent(Uzbekistan) in June 1997. It is shown that the use of solar energy devices in particular on the basis of photovoltaic cells has the economical advantage in Kazakhstan arid lands. The description of some photovoltaic cells on the basis of aluminium and gallium arsenide is presented. (A.A.D.)

  18. Ab initio study of hot electrons in GaAs

    OpenAIRE

    Bernardi, Marco; Vigil-Fowler, Derek; Ong, Chin Shen; Neaton, Jeffrey B.; Louie, Steven G.

    2015-01-01

    Hot carrier dynamics critically impacts the performance of electronic, optoelectronic, photovoltaic, and plasmonic devices. Hot carriers lose energy over nanometer lengths and picosecond timescales and thus are challenging to study experimentally, whereas calculations of hot carrier dynamics are cumbersome and dominated by empirical approaches. In this work, we present ab initio calculations of hot electrons in gallium arsenide (GaAs) using density functional theory and many-body perturbation...

  19. 500 MHz transient digitizers based on GaAs CCDs

    Energy Technology Data Exchange (ETDEWEB)

    Bryman, D A; Constable, M; Cresswell, J V; Daviel, A; LeNoble, M; Mildenberger, J; Poutissou, R

    1996-11-01

    A system of 500 MHz transient digitizers based on gallium arsenide resistive gate charged coupled devices has been developed for an experiment studying rare K decays. CCDs with dynamic range of 8-bits and 128 or 320 pixels are used as analog pipelines. The CCD`s are driven by a single phase transport system. Data readout and manipulation occurs at 15.6 MHz. (authors). 12 refs., 15 figs.

  20. Heat load of a GaAs photocathode in an SRF electron gun

    International Nuclear Information System (INIS)

    Wang Erdong; Zhao Kui; Jorg Kewisch; Ilan Ben-Zvi; Andrew Burrill; Trivini Rao; Wu Qiong; Animesh Jain; Ramesh Gupta; Doug Holmes

    2011-01-01

    A great deal of effort has been made over the last decades to develop a better polarized electron source for high energy physics. Several laboratories operate DC guns with a gallium arsenide photocathode, which yield a highly polarized electron beam. However, the beam's emittance might well be improved by using a superconducting radio frequency (SRF) electron gun, which delivers beams of a higher brightness than that from DC guns because the field gradient at the cathode is higher. SRF guns with metal and CsTe cathodes have been tested successfully. To produce polarized electrons, a Gallium-Arsenide photo-cathode must be used: an experiment to do so in a superconducting RF gun is under way at BNL. Since a bulk gallium arsenide (GaAs) photocathode is normal conducting, a problem arises from the heat load stemming from the cathode. We present our measurements of the electrical resistance of GaAs at cryogenic temperatures, a prediction of the heat load and verification by measuring the quality factor of the gun with and without the cathode at 2 K. We simulate heat generation and flow from the GaAs cathode using the ANSYS program. By following the findings with the heat load model, we designed and fabricated a new cathode holder (plug) to decrease the heat load from GaAs. (authors)

  1. Circuit quantum electrodynamics with a spin qubit.

    Science.gov (United States)

    Petersson, K D; McFaul, L W; Schroer, M D; Jung, M; Taylor, J M; Houck, A A; Petta, J R

    2012-10-18

    Electron spins trapped in quantum dots have been proposed as basic building blocks of a future quantum processor. Although fast, 180-picosecond, two-quantum-bit (two-qubit) operations can be realized using nearest-neighbour exchange coupling, a scalable, spin-based quantum computing architecture will almost certainly require long-range qubit interactions. Circuit quantum electrodynamics (cQED) allows spatially separated superconducting qubits to interact via a superconducting microwave cavity that acts as a 'quantum bus', making possible two-qubit entanglement and the implementation of simple quantum algorithms. Here we combine the cQED architecture with spin qubits by coupling an indium arsenide nanowire double quantum dot to a superconducting cavity. The architecture allows us to achieve a charge-cavity coupling rate of about 30 megahertz, consistent with coupling rates obtained in gallium arsenide quantum dots. Furthermore, the strong spin-orbit interaction of indium arsenide allows us to drive spin rotations electrically with a local gate electrode, and the charge-cavity interaction provides a measurement of the resulting spin dynamics. Our results demonstrate how the cQED architecture can be used as a sensitive probe of single-spin physics and that a spin-cavity coupling rate of about one megahertz is feasible, presenting the possibility of long-range spin coupling via superconducting microwave cavities.

  2. Thin film structures and phase stability

    International Nuclear Information System (INIS)

    Clemens, B.M.; Johnson, W.L.

    1990-01-01

    This was a two day symposium, with invited and contributed papers as well as an evening poster session. The first day concentrated on solid state reactions with invited talks by Lindsay Greer from the University of Cambridge, King Tu from IBM Yorktown Heights, and Carl Thompson from MIT. Professor Greer observed that the diffusion of Zr is 10 6 times slower than that of Ni in amorphous NiZr, confirming that Ni is the mobile species in solid state amorphization. King Tu explained the formation of metastable phases in this film diffusion couples by the concept of maximum rate of free energy change. Carl Thompson discussed the formation of amorphous phases in metal silicon systems, and discussed a two stage nucleation and growth process. The contributed papers also generated discussion on topics such as phase segregation, amorphous silicide formation, room temperature oxidation of silicon, and nucleation during ion beam irradiation. There was a lively poster session on Monday evening with papers on a wide variety of topics covering the general area of thin film science. The second day had sessions Epitaxy and Multilayer Structure I and II, with the morning focussing on epitaxial and heteroepitaxial growth of thin films. Robin Farrow of IBM Almaden led off with an invited talk where he reported on some remarkable success he and his co-workers have had in growing single crystal epitaxial thin films and superlattices of silver, iron, cobalt and platinum on GaAs. This was followed by several talks on epitaxial growth and characterization. The afternoon focused on interfaces and structure of multilayered materials. A session on possible stress origins of the supermodulus effect was highlighted by lively interaction from the audience. Most of the papers presented at the symposium are presented in this book

  3. Ferritin-Templated Quantum-Dots for Quantum Logic Gates

    Science.gov (United States)

    Choi, Sang H.; Kim, Jae-Woo; Chu, Sang-Hyon; Park, Yeonjoon; King, Glen C.; Lillehei, Peter T.; Kim, Seon-Jeong; Elliott, James R.

    2005-01-01

    Quantum logic gates (QLGs) or other logic systems are based on quantum-dots (QD) with a stringent requirement of size uniformity. The QD are widely known building units for QLGs. The size control of QD is a critical issue in quantum-dot fabrication. The work presented here offers a new method to develop quantum-dots using a bio-template, called ferritin, that ensures QD production in uniform size of nano-scale proportion. The bio-template for uniform yield of QD is based on a ferritin protein that allows reconstitution of core material through the reduction and chelation processes. One of the biggest challenges for developing QLG is the requirement of ordered and uniform size of QD for arrays on a substrate with nanometer precision. The QD development by bio-template includes the electrochemical/chemical reconsitution of ferritins with different core materials, such as iron, cobalt, manganese, platinum, and nickel. The other bio-template method used in our laboratory is dendrimers, precisely defined chemical structures. With ferritin-templated QD, we fabricated the heptagonshaped patterned array via direct nano manipulation of the ferritin molecules with a tip of atomic force microscope (AFM). We also designed various nanofabrication methods of QD arrays using a wide range manipulation techniques. The precise control of the ferritin-templated QD for a patterned arrangement are offered by various methods, such as a site-specific immobilization of thiolated ferritins through local oxidation using the AFM tip, ferritin arrays induced by gold nanoparticle manipulation, thiolated ferritin positioning by shaving method, etc. In the signal measurements, the current-voltage curve is obtained by measuring the current through the ferritin, between the tip and the substrate for potential sweeping or at constant potential. The measured resistance near zero bias was 1.8 teraohm for single holoferritin and 5.7 teraohm for single apoferritin, respectively.

  4. Determination of Heavy elements in Drinking Water from Different Regions of Baghdad City (Iraq Using EDXRF Spectrometer

    Directory of Open Access Journals (Sweden)

    Muhanad H. Alrakabi

    2017-11-01

    Full Text Available It was calculated the average concentrations of elements manganese, iron, cobalt, nickel, copper, zinc, arsenic, cadmium and lead in the sixteen samples of drinking water (tap water, were collected from different areas in the Baghdad city. The Results indicated that the average of concentrations of the elements Mn, Fe, Pb, Ni and Cd (0.44ppm, 0.49ppm, 0.04ppm, 0.17ppm and 1.2ppm respectively higher than permissible limit while the concentrations of elements Cu and Zn (0.11ppm and 0.14ppm respectively were lower than the permissible limit of World Health Organization (WHO standards (1ppm and 3ppm respectively for drinking water and the concentration of Arsenic in the nuclear lab sample in college of sciences - Mustansiriyah University was higher than permissible limit. All the drinking water samples were analyzed and determined the physical and chemical properties such as Electrical Conductivity (EC, pH, and Total Dissolved Solids (TDS. The highest value was (1064μS/cm in Al-Tuwaitha sample and the lowest value (531μS/cm in Al-Sadr City (Sector 7 sample for the Electrical Conductivity. The pH values ranged from (7.0-8.2. The average levels of Total Dissolved Solids (TDS, the highest value was 550 mg/L in the Diyala Bridge sample while the lowest value 276mg/L in Al-Sadr City (Sector 7 sample. The results were compared with national and international standards, and it’s also showed that the values of the parameters within the permissible limit of World Health Organization (WHO standards, except the Electrical Conductivity values for some samples were higher than permissible limit. According to these results, all the water projects must be monitored as well as using the proper and modern techniques for treatment the drinking water.

  5. Glyphosate, pathways to modern diseases II: Celiac sprue and gluten intolerance

    Science.gov (United States)

    Samsel, Anthony

    2013-01-01

    Celiac disease, and, more generally, gluten intolerance, is a growing problem worldwide, but especially in North America and Europe, where an estimated 5% of the population now suffers from it. Symptoms include nausea, diarrhea, skin rashes, macrocytic anemia and depression. It is a multifactorial disease associated with numerous nutritional deficiencies as well as reproductive issues and increased risk to thyroid disease, kidney failure and cancer. Here, we propose that glyphosate, the active ingredient in the herbicide, Roundup®, is the most important causal factor in this epidemic. Fish exposed to glyphosate develop digestive problems that are reminiscent of celiac disease. Celiac disease is associated with imbalances in gut bacteria that can be fully explained by the known effects of glyphosate on gut bacteria. Characteristics of celiac disease point to impairment in many cytochrome P450 enzymes, which are involved with detoxifying environmental toxins, activating vitamin D3, catabolizing vitamin A, and maintaining bile acid production and sulfate supplies to the gut. Glyphosate is known to inhibit cytochrome P450 enzymes. Deficiencies in iron, cobalt, molybdenum, copper and other rare metals associated with celiac disease can be attributed to glyphosate's strong ability to chelate these elements. Deficiencies in tryptophan, tyrosine, methionine and selenomethionine associated with celiac disease match glyphosate's known depletion of these amino acids. Celiac disease patients have an increased risk to non-Hodgkin's lymphoma, which has also been implicated in glyphosate exposure. Reproductive issues associated with celiac disease, such as infertility, miscarriages, and birth defects, can also be explained by glyphosate. Glyphosate residues in wheat and other crops are likely increasing recently due to the growing practice of crop desiccation just prior to the harvest. We argue that the practice of “ripening” sugar cane with glyphosate may explain the recent

  6. Health effects from exposure to atmospheric mineral dust near Las Vegas, NV, USA

    Directory of Open Access Journals (Sweden)

    Deborah E. Keil

    Full Text Available Desert areas are usually characterized by a continuous deposition of fine airborne particles. Over time, this process results in the accumulation of silt and clay on desert surfaces. We evaluated health effects associated with regional atmospheric dust, or geogenic dust, deposited on surfaces in the Nellis Dunes Recreation Area (NDRA in Clark County, Nevada, a popular off-road vehicle (ORV recreational site frequented daily by riders, families, and day campers. Because of atmospheric mixing and the mostly regional origin of the accumulated particles, the re-suspended airborne dust is composed of a complex mixture of minerals and metals including aluminum, vanadium, chromium, manganese, iron, cobalt, copper, zinc, arsenic, strontium, cesium, lead, uranium, and others. Geogenic dust with a median diameter of 4.1 μm was administered via oropharyngeal aspiration to female B6C3F1 mice at doses of 0.01 to 100 mg dust/kg body weight, four times, a week apart, for 28-days. Immuno- and neurotoxicological outcomes 24 h following the last exposure were evaluated. Antigen-specific IgM responses were dose-responsively suppressed at 0.1, 1.0, 10 and 100 mg/kg/day. Splenic and thymic lymphocytic subpopulations and natural killer cell activity also were significantly reduced. Antibodies against MBP, NF-68, and GFAP were not affected, while brain CD3+ T cells were decreased in number. A lowest observed adverse effect level (LOAEL of 0.1 mg/kg/day and a no observed adverse effect level (NOAEL of 0.01 mg/kg/day were derived based on the antigen-specific IgM responses. Keywords: Geogenic dust, Heavy metals, Minerals, Lung exposure, Immunotoxicity, Neurotoxicity

  7. A novel exploratory chemometric approach to environmental monitorring by combining block clustering with Partial Least Square (PLS) analysis

    Science.gov (United States)

    2013-01-01

    Background Given the serious threats posed to terrestrial ecosystems by industrial contamination, environmental monitoring is a standard procedure used for assessing the current status of an environment or trends in environmental parameters. Measurement of metal concentrations at different trophic levels followed by their statistical analysis using exploratory multivariate methods can provide meaningful information on the status of environmental quality. In this context, the present paper proposes a novel chemometric approach to standard statistical methods by combining the Block clustering with Partial least square (PLS) analysis to investigate the accumulation patterns of metals in anthropized terrestrial ecosystems. The present study focused on copper, zinc, manganese, iron, cobalt, cadmium, nickel, and lead transfer along a soil-plant-snai food chain, and the hepatopancreas of the Roman snail (Helix pomatia) was used as a biological end-point of metal accumulation. Results Block clustering deliniates between the areas exposed to industrial and vehicular contamination. The toxic metals have similar distributions in the nettle leaves and snail hepatopancreas. PLS analysis showed that (1) zinc and copper concentrations at the lower trophic levels are the most important latent factors that contribute to metal accumulation in land snails; (2) cadmium and lead are the main determinants of pollution pattern in areas exposed to industrial contamination; (3) at the sites located near roads lead is the most threatfull metal for terrestrial ecosystems. Conclusion There were three major benefits by applying block clustering with PLS for processing the obtained data: firstly, it helped in grouping sites depending on the type of contamination. Secondly, it was valuable for identifying the latent factors that contribute the most to metal accumulation in land snails. Finally, it optimized the number and type of data that are best for monitoring the status of metallic

  8. FERROMAGNETIC NANOTUBES IN PORES OF TRACK MEMBRANES FOR THE FLEXIBLE ELECTRONIC ELEMENTS

    Directory of Open Access Journals (Sweden)

    E. Yu. Kaniukov

    2017-01-01

    Full Text Available In the paper the template synthesis of ferromagnetic (Fe, Co, Ni nanotubes in the pores of track membranes were studied. The aim of this work was determination of nanotubes basic structural and magnetic parameters and demonstration of the possibility of application in the flexible electronics elements.By electrochemical deposition, ferromagnetic nanotubes with a diameter of 110 nm and an aspect ratio of 100 were formed in the pores of polyethylene terephthalate track membranes. The morphology of the obtained nanostructures were studied by scanning electron microscopy, the elemental composition was determined by the energy-dispersion analysis. Using the X-ray structural analysis, the main parameters of the crystal structure were established: lattice type, lattice parameter and average crystallite size. The magnetic properties were studied by the method of vibrational magnetometry.It was shown that in the selected conditions of synthesis without reference to the type of ferromagnetic metals nanotubes had the same dimensions – length, diameter and wall thickness. The produced nanotubes consisted of iron, cobalt and nickel, respectively without oxides impurities. Nanotubes had a polycrystalline structure of walls with a body-centered cubic (iron, face-centered cubic (cobalt and nickel crystal lattice. According to the main magnetic parameters, nanotubes belonged to a group of soft magnetic materials. Also, the presence of magnetic anisotropy, which is caused by the features of crystalline structure and shape of the nanostructures.Based on the analysis of structural and magnetic characteristics of ferromagnetic nanotubes which were synthesized in the pores of track membranes, were proposed the main principles of their using in the elements’ of flexible electronics constructing (magnetic field direction sensors and magnetic memory elements. 

  9. Multivariate statistical assessment of heavy metal pollution sources of groundwater around a lead and zinc plant

    Directory of Open Access Journals (Sweden)

    Zamani Abbas Ali

    2012-12-01

    Full Text Available Abstract The contamination of groundwater by heavy metal ions around a lead and zinc plant has been studied. As a case study groundwater contamination in Bonab Industrial Estate (Zanjan-Iran for iron, cobalt, nickel, copper, zinc, cadmium and lead content was investigated using differential pulse polarography (DPP. Although, cobalt, copper and zinc were found correspondingly in 47.8%, 100.0%, and 100.0% of the samples, they did not contain these metals above their maximum contaminant levels (MCLs. Cadmium was detected in 65.2% of the samples and 17.4% of them were polluted by this metal. All samples contained detectable levels of lead and iron with 8.7% and 13.0% of the samples higher than their MCLs. Nickel was also found in 78.3% of the samples, out of which 8.7% were polluted. In general, the results revealed the contamination of groundwater sources in the studied zone. The higher health risks are related to lead, nickel, and cadmium ions. Multivariate statistical techniques were applied for interpreting the experimental data and giving a description for the sources. The data analysis showed correlations and similarities between investigated heavy metals and helps to classify these ion groups. Cluster analysis identified five clusters among the studied heavy metals. Cluster 1 consisted of Pb, Cu, and cluster 3 included Cd, Fe; also each of the elements Zn, Co and Ni was located in groups with single member. The same results were obtained by factor analysis. Statistical investigations revealed that anthropogenic factors and notably lead and zinc plant and pedo-geochemical pollution sources are influencing water quality in the studied area.

  10. Magnetic resonance microscopy of iron transport in methanogenic granules

    Science.gov (United States)

    Bartacek, Jan; Vergeldt, Frank J.; Gerkema, Edo; Jenicek, Pavel; Lens, Piet N. L.; Van As, Henk

    2009-10-01

    Interactions between anaerobic biofilms and heavy metals such as iron, cobalt or nickel are largely unknown. Magnetic resonance imaging (MRI) is a non-invasive method that allows in situ studies of metal transport within biofilm matrixes. The present study investigates quantitatively the penetration of iron (1.75 mM) bound to ethylenediaminetetraacetate (EDTA) into the methanogenic granules (spherical biofilm). A spatial resolution of 109 × 109 × 218 μm 3 and a temporal resolution of 11 min are achieved with 3D Turbo Spin Echo (TSE) measurements. The longitudinal relaxivity, i.e. the slope the dependence of the relaxation rate (1/ T1) on the concentration of paramagnetic metal ions, was used to measure temporal changes in iron concentration in the methanogenic granules. It took up to 300 min for the iron-EDTA complex ([FeEDTA] 2-) to penetrate into the methanogenic granules (3-4 mm in diameter). The diffusion was equally fast in all directions with irregularities such as diffusion-facilitating channels and diffusion-resistant zones. Despite these irregularities, the overall process could be modeled using Fick's equations for diffusion in a sphere, because immobilization of [FeEDTA] 2- in the granular matrix (or the presence of a reactive barrier) was not observed. The effective diffusion coefficient ( D ejf) of [FeEDTA] 2- was found to be 2.8 × 10 -11 m 2 s -1, i.e. approximately 4% of D ejf of [FeEDTA] 2- in water. The Fickian model did not correspond to the processes taking place in the core of the granule (3-5% of the total volume of the granule), where up to 25% over-saturation by iron (compare to the concentration in the bulk solution) occurred.

  11. Determination of hafnium, molybdenum, and vanadium in niobium and niobium-based alloys by atomic absorption spectrometry

    International Nuclear Information System (INIS)

    Ide, Kunikazu; Kobayashi, Takeshi; Sudo, Emiko.

    1985-01-01

    The analytical procedure is as follows: Weigh 1 g of a sample and put it into a 100 cm 3 PTFE beaker. Add 5 ml of distilled water and 5 ml of hydrofluoric acid, and then heat the solution on a hot plate, adding 3 ml of nitric acid dropwise. Dilute the solution to 100 cm 3 with distilled water. When hafnium is determined, add 2 g of diammonium titanium hexafluoride ((NH 4 ) 2 TiF 6 )) before dilution. Working standard solutions are prepared by adding the stock standard solutions of hafnium, molybdenum, and vanadium into niobium solutions. When hafnium is determined, add 2 g of (NH 4 ) 2 TiF 6 and the alloying elements in amounts corresponding to those in sample solutions into the working standard solutions. The tolerable amounts of hydrofluoric acid were 2.9 M, 2.1 M, and 3.1 M and those of nitric acid were 1.0 M, 1.6 M, and 1.6 M for hafnium, molybdenum, and vanadium, respectively. It was found that (NH 4 ) 2 TiF 6 greatly increased the sensitivity for hafnium determination. Niobium showed minus effect for hafnium and plus effect for molybdenum and vanadium. The atomic absorption of molybdenum and vanadium were not influenced by the presence of 20 % of each alloying element, while the atomic absorption of hafnium was given plus effect by 20 % of zirconium, iron, cobalt, nickel, manganese, chromium or vanadium and minus effect by 20 % tungsten. The analytical values of hafnium, molybdenum, and vanadium in niobium-based alloys by this method showed a good agreement with those by X-ray fluorescence analysis. The lower limits of determination (S/N=2) were 0.05, 0.001, and 0.002 % and the relative standard deviation were 3, 1, and 1.5 % for hafnium, molybdenum, and vanadium, respectively. (author)

  12. Magnetic characterization of mixed phases in FeVO4sbnd Co3V2O8 system

    Science.gov (United States)

    Guskos, N.; Zolnierkiewicz, G.; Pilarska, M.; Typek, J.; Berczynski, P.; Blonska-Tabero, A.; Aidinis, K.

    2018-04-01

    Dynamic and static magnetic properties of four nFeVO4/(1-n)Co3V2O8 composites obtained in reactions between nFeVO4 and (1-n)Co3V2O8 (n = 0.82, 0.80, 0.78 and 0.76) have been investigated by dc magnetometry and electron paramagnetic resonance (EPR). All samples were diphase containing both the howardevansite-type and the lyonsite-type phases in different proportions. Dc magnetic susceptibility study showed the Curie-Weiss paramagnetic behavior with strong antiferromagnetic (AFM) interaction in the high-temperature range and the phase transition to the AFM state at low temperatures. The calculated effective magnetic moment could be justified by the presence of high spin Fe3+ and Co2+ ions. The appearance of hysteresis loop in isothermal magnetisation at low temperature indicates the existence of the ferromagnetic component in all four samples, but only 0.5% of all magnetic ions are involved in this phase. EPR spectra recorded in high-temperature range (T > 90 K) consisted of a single broad line centred at ∼3.2 kG. The fitting of observed spectra with two Gaussian lineshape functions allowed to study the temperature dependence of EPR parameters (resonance field, linewidth, integrated intensity). This analysis suggests that EPR signal arises from two spin subsystems: paramagnetic Fe3+ ions subjected to AFM interaction and AFM spin pairs/clusters of iron/cobalt visible only at high temperatures. At low temperatures two transitions to AFM states, due to the mixture of two structural phases, are registered in magnetic susceptibility measurements.

  13. A boiling-water reactor concept for low radiation exposure based on operating experience

    International Nuclear Information System (INIS)

    Koine, Y.; Uchida, S.; Izumiya, M.; Miki, M.

    1983-01-01

    A review of boiling-water reactor (BWR) operating experience indicates the significant role of water chemistry in determining the radiation dose rate contributing to occupational exposure. The major contributor among the radioactive species involved is identified as 60 Co, produced by neutron activation of 59 Co originating from structural materials. Iron crud, a fine solid form of corrosion product in the reactor water, is also shown to enhance the radiation dose rate. A theoretical study, supported by the operating experience and an extensive confirmatory test, led to the computerized analytical model called DR CRUD which is capable of predicting long-term radiation dose buildup. It accounts for the mechanism of radiation buildup through corrosion products such as irons, cobalts and other radioactive elements; their generation, transport, activation, interaction and deposition in the reactor coolant system are simulated. A scoping analysis, using this model as a tool, establishes the base line of the BWR concept for low occupational exposure. The base line consists of a set of target values for an annual exposure of 200 man.rem in an 1100 MW(e) BWR unit. They are the parameters that will be built into the design such as iron and cobalt inputs to the reactor water, and the capability of the reactor and the condensate purification system. Applicable means of technology are identified to meet the targets, ranging from improved water chemistry to the purification technique, optimized material selection and the recommended operational procedure. Extensive test programmes provide specifications of these means for use in BWRs. Combinations of their application are reviewed to define the concept of reduced exposure. Analytical study verifies the effectiveness of the proposed BWR concept in achieving a low radiation dose rate; occupational exposure is reduced to 200 man.rem/a. (author)

  14. Facile and large-scale synthesis of high quality few-layered graphene nano-platelets via methane decomposition over unsupported iron family catalysts

    Energy Technology Data Exchange (ETDEWEB)

    Awadallah, Ahmed E., E-mail: ahmedelsayed_epri@yahoo.com [Process Development Division, Egyptian Petroleum Research Institute, 11727 Cairo (Egypt); Aboul-Enein, Ateyya A. [Process Development Division, Egyptian Petroleum Research Institute, 11727 Cairo (Egypt); Kandil, Usama F. [Petroleum Application Department, Egyptian Petroleum Research Institute, 11727 Cairo (Egypt); Taha, Mahmoud Reda [Department of Civil Engineering, University of New Mexico, Albuquerque, NM 87131 (United States)

    2017-04-15

    High quality few-layered graphene nano-platelets (GNPs) were successfully prepared via catalytic chemical vapor deposition of methane under ambient pressure using substrate-free unsupported iron, cobalt, and nickel metallic sheets as catalysts. The bulk catalysts were prepared via combustion method using citric acid as a fuel. Various analytical techniques, including high-resolution transmission electron microscopy (TEM), X-ray diffraction (XRD), thermogravimetric analysis (TGA), temperature programmed reduction (TPR) and Raman spectroscopy were employed to characterize the fresh and reduced catalysts and to identify the morphological structure of the as-grown GNPs. TEM images of the reduced metal catalysts showed that polycrystalline metallic sheets were easily produced after complete reduction of unsupported metal oxides. The data demonstrated that the formation of zero-valent metallic sheets could effectively promote the growth of GNPs on their surfaces. The unsupported Ni catalyst exhibits higher catalytic growth activity in terms of GNPs yield (254 wt%) compared with all other catalysts. Raman spectra and TEM results established that a few layers of GNPs with high crystallinity and good graphitization were produced. TGA results further demonstrated that the as-grown GNPs exhibit significantly higher thermal stability in air atmosphere compared with other synthesis methods. - Highlights: • Few-layered graphene nanoplatelets were prepared via methane catalytic decomposition. • Metallic sheets of iron group metals were used as novel catalysts. • The surfaces of metallic sheets were found to be very effective for GNPs growth. • The number of layers is dependent on the morphological structure of the catalysts. • The unsupported metallic Ni catalyst exhibited higher catalytic growth activity.

  15. Bions: a family of biomimetic mineralo-organic complexes derived from biological fluids.

    Directory of Open Access Journals (Sweden)

    Cheng-Yeu Wu

    Full Text Available Mineralo-organic nanoparticles form spontaneously in human body fluids when the concentrations of calcium and phosphate ions exceed saturation. We have shown previously that these mineralo-organic nanoparticles possess biomimetic properties and can reproduce the whole phenomenology of the so-called nanobacteria-mineralized entities initially described as the smallest microorganisms on earth. Here, we examine the possibility that various charged elements and ions may form mineral nanoparticles with similar properties in biological fluids. Remarkably, all the elements tested, including sodium, magnesium, aluminum, calcium, manganese, iron, cobalt, nickel, copper, zinc, strontium, and barium form mineralo-organic particles with bacteria-like morphologies and other complex shapes following precipitation with phosphate in body fluids. Upon formation, these mineralo-organic particles, which we term bions, invariably accumulate carbonate apatite during incubation in biological fluids; yet, the particles also incorporate additional elements and thus reflect the ionic milieu in which they form. Bions initially harbor an amorphous mineral phase that gradually converts to crystals in culture. Our results show that serum produces a dual inhibition-seeding effect on bion formation. Using a comprehensive proteomic analysis, we identify a wide range of proteins that bind to these mineral particles during incubation in medium containing serum. The two main binding proteins identified, albumin and fetuin-A, act as both inhibitors and seeders of bions in culture. Notably, bions possess several biomimetic properties, including the possibility to increase in size and number and to be sub-cultured in fresh culture medium. Based on these results, we propose that bions represent biological, mineralo-organic particles that may form in the body under both physiological and pathological homeostasis conditions. These mineralo-organic particles may be part of a

  16. COMPUŞI COORDINATIVI ŞI COMPOZIŢII CU PROPRIETĂŢI UTILE PENTRU BIOTEHNOLOGII AGRICOLE

    Directory of Open Access Journals (Sweden)

    Ion BULHAC

    2015-12-01

    Full Text Available Au fost scoşi în evidenţă compuşi coordinativi ai fierului, cobaltului, manganului de tip μ3-oxo homo- şi heteronucleari, dioximaţi şi compoziţii din macro-, microelemente şi vitamine cu proprietăţi de stimulatori de creştere şi dezvoltare a plantelor de cultură, de ridicare a energiei de germinare a seminţelor tratate, antioxidante, de majorare a rezistenţei plan-telor la secetă şi temperaturi suboptimale, de mărire a productivităţii plantelor şi de îmbunătăţire a calităţii producţiei. Au fost stabilite condiţiile de utilizare, inclusiv concentraţia optimală a compuşilor coordinativi în procedeele de cultivare a plantelor agricole: porumb, sfeclă de zahăr, sfeclă roşie de masă, castraveţi, tomate, fasole, soia şi a.COORDINATION COMPOUNDS AND COMPOSITIONS WITH USEFUL PROPERTIES FOR AGRICULTURE BIOTECHNOLOGIESThere were highlighted iron, cobalt, manganese μ3-oxo homo- and heteronuclear coordination compounds, dioximates and compositions consisting of macro-, microelements and vitamins with stimulation properties of crop plants growth and development, rising the germination energy of treated seeds, antioxidant properties, increasing plant resistance to drought and suboptimal temperatures, incrementing plant productivity and improvement of production quality. There were established the terms of use, including optimal concentration of coordination compounds in the cultivation processes of agricultural plants: corn, sugar beets, beetroot, cucumbers, tomatoes, beans, soy and other.

  17. A novel exploratory chemometric approach to environmental monitorring by combining block clustering with Partial Least Square (PLS) analysis.

    Science.gov (United States)

    Nica, Dragos V; Bordean, Despina Maria; Pet, Ioan; Pet, Elena; Alda, Simion; Gergen, Iosif

    2013-08-30

    Given the serious threats posed to terrestrial ecosystems by industrial contamination, environmental monitoring is a standard procedure used for assessing the current status of an environment or trends in environmental parameters. Measurement of metal concentrations at different trophic levels followed by their statistical analysis using exploratory multivariate methods can provide meaningful information on the status of environmental quality. In this context, the present paper proposes a novel chemometric approach to standard statistical methods by combining the Block clustering with Partial least square (PLS) analysis to investigate the accumulation patterns of metals in anthropized terrestrial ecosystems. The present study focused on copper, zinc, manganese, iron, cobalt, cadmium, nickel, and lead transfer along a soil-plant-snai food chain, and the hepatopancreas of the Roman snail (Helix pomatia) was used as a biological end-point of metal accumulation. Block clustering deliniates between the areas exposed to industrial and vehicular contamination. The toxic metals have similar distributions in the nettle leaves and snail hepatopancreas. PLS analysis showed that (1) zinc and copper concentrations at the lower trophic levels are the most important latent factors that contribute to metal accumulation in land snails; (2) cadmium and lead are the main determinants of pollution pattern in areas exposed to industrial contamination; (3) at the sites located near roads lead is the most threatfull metal for terrestrial ecosystems. There were three major benefits by applying block clustering with PLS for processing the obtained data: firstly, it helped in grouping sites depending on the type of contamination. Secondly, it was valuable for identifying the latent factors that contribute the most to metal accumulation in land snails. Finally, it optimized the number and type of data that are best for monitoring the status of metallic contamination in terrestrial ecosystems

  18. Effect of Lanthanum as a Promoter on Fe-Co/SiO2 Catalyst for Fischer-Tropsch Synthesis

    Directory of Open Access Journals (Sweden)

    Ali Abbasi

    2014-03-01

    Full Text Available Iron-Cobalt catalyst is well known from both operational and economical aspects for Fischer-Tropsch synthesis. Effort to increase the efficiency of this kind of catalyst is an important research topic. In this work, the effect of lanthanum on characteristic behavior, conversion and selectivity of a Fe-Co/SiO2 Fischer-Tropsch catalyst was studied. The Fe-Co-La/SiO2 Catalysts were prepared using an incipient wetness impregnation method. These catalysts were then characterized by XRF-EDAX, BET and TPR techniques, and their performance were evaluated in a lab-scale reactor at 250ºC, H2/CO = 1.8 of molar ratio, 16 barg pressure and GHSV=600 h-1. TPR analysis showed that the addition of La lowered the reduction temperature of Fe-Co catalyst, and due to a lower temperature, the sintering of the catalyst can be mitigated. Furthermore, from the micro reactor tests (about 4 days, it was found that lanthanum promoted catalyst had higher selectivity toward hydrocarbons, and lower selectivity toward CO2.Received: 8th July 2013; Revised: 18th November 2013; Accepted: 1st December 2013[How to Cite: Abbasi, A., Ghasemi, M., Sadighi, S. (2014. Effect of Lanthanum as a Promoter on Fe-Co/SiO2 Catalyst for Fischer-Tropsch Synthesis. Bulletin of Chemical Reaction Engineering & Catalysis, 9 (1: 23-27. (doi:10.9767/bcrec.9.1.5142.23-27][Permalink/DOI: http://dx.doi.org/10.9767/bcrec.9.1.5142.23-27

  19. Development of electrolyte-supported intermediate-temperature single-chamber solid oxide fuel cells using Ln{sub 0.7}Sr{sub 0.3}Fe{sub 0.8}Co{sub 0.2}O{sub 3-{delta}} (Ln = Pr, La, Gd) cathodes

    Energy Technology Data Exchange (ETDEWEB)

    Ruiz de Larramendi, I.; Ruiz de Larramendi, J.I.; Rojo, T. [Departamento de Quimica Inorganica, Universidad del Pais Vasco, Apdo.644, 48080 Bilbao (Spain); Lamas, D.G.; Cabezas, M.D.; Walsoee de Reca, N.E. [CINSO, CONICET-CITEFA, J.B. de La Salle 4397 (B1603ALO) Villa Martelli, Pcia. de Buenos Aires (Argentina)

    2009-09-05

    Iron-cobalt-based perovskite oxides with general formula Ln{sub 0.7}Sr{sub 0.3}Fe{sub 0.8}Co{sub 0.2}O{sub 3-{delta}} (where Ln = La, Pr and Gd) have been investigated for their application as intermediate-temperature cathodes in solid oxide fuel cells (SOFCs). Powdered samples of these materials were synthesized by a novel gel combustion process and then characterized by X-ray powder diffraction (XPD) and scanning electron microscopy (SEM). XPD patterns were satisfactorily indexed with an orthorhombic GdFeO{sub 3}-type structure and, for all samples, a mean particle size of less than 1 {mu}m was estimated from the SEM data. Experimental single-chamber SOFCs using with these materials as cathodes and NiO-SDC (samaria-doped ceria) and SDC as anode and electrolyte, respectively, were evaluated at 600 C in a methane/oxygen mixtures. Peak power densities of 65.4, 48.7 and 46.2 mW cm{sup -2} were obtained for Ag vertical stroke Ln{sub 0.7}Sr{sub 0.3}Fe{sub 0.8}Co{sub 0.2}O{sub 3-{delta}} vertical stroke SDC vertical stroke NiO-SDC vertical stroke Pt cells with Ln = Pr, La and Gd, respectively. The relatively high power density obtained for the Pr compound shows that it could be an interesting material for cathode of single-chamber SOFCs. (author)

  20. Mesophilic and thermophilic anaerobic co-digestion of winery wastewater sludge and wine lees: An integrated approach for sustainable wine production.

    Science.gov (United States)

    Da Ros, C; Cavinato, C; Pavan, P; Bolzonella, D

    2017-12-01

    In this work, winery wastes generated by a cellar producing approximately 300,000 hL of wine per year was monitored for a period of one year. On average, 196 L of wastewater, 0.1 kg of waste activated sludge (dry matter) and 1.6 kg of wine lees were produced per hectoliter of wine produced. Different winery wastes, deriving from different production steps, namely waste activated sludge from wastewater treatment and wine lees, were co-treated using an anaerobic digestion process. Testing was conducted on a pilot scale for both mesophilic and thermophilic conditions. The process was stable for a long period at 37 °C, with an average biogas production of 0.386 m 3 /kg COD fed . On the other hand, for thermophilic conditions, volatile fatty acids accumulated in the reactor and the process failed after one hydraulic retention time (23 days). In order to fix the biological process, trace elements (iron, cobalt and nickel) were added to the feed of the thermophilic reactor. Metals augmentation improved process stability and yields at 55 °C. The pH ranged between 7.8 and 8.0, and specific gas production was 0.450 m 3 /kg COD fed , which corresponded to dry matter and COD removals of 34% and 88%, respectively. Although the observed performances in terms of biogas production were good, the thermophilic process exhibited some limitations related to both the necessity of metals addition and the worse dewaterability properties. In fact, while the mesophilic digestates reached a good dewatering quality via the addition of 6.5 g of polymer per kg of dry matter, the required dosage for the thermophilic sludge was greater than 10 g/kg of dry matter. Copyright © 2016 Elsevier Ltd. All rights reserved.

  1. Multivariate statistical assessment of heavy metal pollution sources of groundwater around a lead and zinc plant.

    Science.gov (United States)

    Zamani, Abbas Ali; Yaftian, Mohammad Reza; Parizanganeh, Abdolhossein

    2012-12-17

    The contamination of groundwater by heavy metal ions around a lead and zinc plant has been studied. As a case study groundwater contamination in Bonab Industrial Estate (Zanjan-Iran) for iron, cobalt, nickel, copper, zinc, cadmium and lead content was investigated using differential pulse polarography (DPP). Although, cobalt, copper and zinc were found correspondingly in 47.8%, 100.0%, and 100.0% of the samples, they did not contain these metals above their maximum contaminant levels (MCLs). Cadmium was detected in 65.2% of the samples and 17.4% of them were polluted by this metal. All samples contained detectable levels of lead and iron with 8.7% and 13.0% of the samples higher than their MCLs. Nickel was also found in 78.3% of the samples, out of which 8.7% were polluted. In general, the results revealed the contamination of groundwater sources in the studied zone. The higher health risks are related to lead, nickel, and cadmium ions. Multivariate statistical techniques were applied for interpreting the experimental data and giving a description for the sources. The data analysis showed correlations and similarities between investigated heavy metals and helps to classify these ion groups. Cluster analysis identified five clusters among the studied heavy metals. Cluster 1 consisted of Pb, Cu, and cluster 3 included Cd, Fe; also each of the elements Zn, Co and Ni was located in groups with single member. The same results were obtained by factor analysis. Statistical investigations revealed that anthropogenic factors and notably lead and zinc plant and pedo-geochemical pollution sources are influencing water quality in the studied area.

  2. Glyphosate, pathways to modern diseases II: Celiac sprue and gluten intolerance.

    Science.gov (United States)

    Samsel, Anthony; Seneff, Stephanie

    2013-12-01

    Celiac disease, and, more generally, gluten intolerance, is a growing problem worldwide, but especially in North America and Europe, where an estimated 5% of the population now suffers from it. Symptoms include nausea, diarrhea, skin rashes, macrocytic anemia and depression. It is a multifactorial disease associated with numerous nutritional deficiencies as well as reproductive issues and increased risk to thyroid disease, kidney failure and cancer. Here, we propose that glyphosate, the active ingredient in the herbicide, Roundup(®), is the most important causal factor in this epidemic. Fish exposed to glyphosate develop digestive problems that are reminiscent of celiac disease. Celiac disease is associated with imbalances in gut bacteria that can be fully explained by the known effects of glyphosate on gut bacteria. Characteristics of celiac disease point to impairment in many cytochrome P450 enzymes, which are involved with detoxifying environmental toxins, activating vitamin D3, catabolizing vitamin A, and maintaining bile acid production and sulfate supplies to the gut. Glyphosate is known to inhibit cytochrome P450 enzymes. Deficiencies in iron, cobalt, molybdenum, copper and other rare metals associated with celiac disease can be attributed to glyphosate's strong ability to chelate these elements. Deficiencies in tryptophan, tyrosine, methionine and selenomethionine associated with celiac disease match glyphosate's known depletion of these amino acids. Celiac disease patients have an increased risk to non-Hodgkin's lymphoma, which has also been implicated in glyphosate exposure. Reproductive issues associated with celiac disease, such as infertility, miscarriages, and birth defects, can also be explained by glyphosate. Glyphosate residues in wheat and other crops are likely increasing recently due to the growing practice of crop desiccation just prior to the harvest. We argue that the practice of "ripening" sugar cane with glyphosate may explain the recent

  3. Implications of the Differential Toxicological Effects of III-V Ionic and Particulate Materials for Hazard Assessment of Semiconductor Slurries.

    Science.gov (United States)

    Jiang, Wen; Lin, Sijie; Chang, Chong Hyun; Ji, Zhaoxia; Sun, Bingbing; Wang, Xiang; Li, Ruibin; Pon, Nanetta; Xia, Tian; Nel, André E

    2015-12-22

    Because of tunable band gaps, high carrier mobility, and low-energy consumption rates, III-V materials are attractive for use in semiconductor wafers. However, these wafers require chemical mechanical planarization (CMP) for polishing, which leads to the generation of large quantities of hazardous waste including particulate and ionic III-V debris. Although the toxic effects of micron-sized III-V materials have been studied in vivo, no comprehensive assessment has been undertaken to elucidate the hazardous effects of submicron particulates and released III-V ionic components. Since III-V materials may contribute disproportionately to the hazard of CMP slurries, we obtained GaP, InP, GaAs, and InAs as micron- (0.2-3 μm) and nanoscale (particles for comparative studies of their cytotoxic potential in macrophage (THP-1) and lung epithelial (BEAS-2B) cell lines. We found that nanosized III-V arsenides, including GaAs and InAs, could induce significantly more cytotoxicity over a 24-72 h observation period. In contrast, GaP and InP particulates of all sizes as well as ionic GaCl3 and InCl3 were substantially less hazardous. The principal mechanism of III-V arsenide nanoparticle toxicity is dissolution and shedding of toxic As(III) and, to a lesser extent, As(V) ions. GaAs dissolves in the cell culture medium as well as in acidifying intracellular compartments, while InAs dissolves (more slowly) inside cells. Chelation of released As by 2,3-dimercapto-1-propanesulfonic acid interfered in GaAs toxicity. Collectively, these results demonstrate that III-V arsenides, GaAs and InAs nanoparticles, contribute in a major way to the toxicity of III-V materials that could appear in slurries. This finding is of importance for considering how to deal with the hazard potential of CMP slurries.

  4. Medical Applications and Toxicities of Gallium Compounds

    Directory of Open Access Journals (Sweden)

    Christopher R. Chitambar

    2010-05-01

    Full Text Available Over the past two to three decades, gallium compounds have gained importance in the fields of medicine and electronics. In clinical medicine, radioactive gallium and stable gallium nitrate are used as diagnostic and therapeutic agents in cancer and disorders of calcium and bone metabolism. In addition, gallium compounds have displayed anti-inflammatory and immunosuppressive activity in animal models of human disease while more recent studies have shown that gallium compounds may function as antimicrobial agents against certain pathogens. In a totally different realm, the chemical properties of gallium arsenide have led to its use in the semiconductor industry. Gallium compounds, whether used medically or in the electronics field, have toxicities. Patients receiving gallium nitrate for the treatment of various diseases may benefit from such therapy, but knowledge of the therapeutic index of this drug is necessary to avoid clinical toxicities. Animals exposed to gallium arsenide display toxicities in certain organ systems suggesting that environmental risks may exist for individuals exposed to this compound in the workplace. Although the arsenic moiety of gallium arsenide appears to be mainly responsible for its pulmonary toxicity, gallium may contribute to some of the detrimental effects in other organs. The use of older and newer gallium compounds in clinical medicine may be advanced by a better understanding of their mechanisms of action, drug resistance, pharmacology, and side-effects. This review will discuss the medical applications of gallium and its mechanisms of action, the newer gallium compounds and future directions for development, and the toxicities of gallium compounds in current use.

  5. Nonlinear THz spectroscopy on n-type GaAs

    Energy Technology Data Exchange (ETDEWEB)

    Gaal, Peter

    2008-06-23

    In this thesis, the ultrafast dynamics of conduction band electrons in semiconductors are investigated by nonlinear terahertz (THz) spectroscopy. In particular, n-doped gallium arsenide samples with doping concentrations in the range of 10{sup 16} cm{sup -3} to 10{sup 17} cm{sup -3} are studied. A novel source for the generation of intense THz radiation is developed which yields single-cycle THz transients with field amplitudes of more then 400 kV/cm. The THz source uses ultrashort optical laser pulses provided by a Ti:sapphire oscillator. In addition, a two-color THz-pump mid-infrared-probe setup is implemented, which allows for two-dimensional time-resolved experiments in the far-infrared wavelength range. Field ionization of neutral shallow donors in gallium arsenide with intense, ultrashort THz pulses and subsequent coherent radiative recombination of electrons to impurity ground states is observed at room temperature. The superradiant decay of the nonlinear polarization results in the emission of a coherent signal with picosecond lifetimes. Such nonlinear signals, which exhibit a lifetime ten times longer than in the linear regime are observed for the first time. At low temperatures and THz field strengths below 5 kV/cm, Rabi flopping on shallow donor transitions is demonstrated. For the first time, the polar electron-LO phonon interaction is directly measured in the quantum kinetic transport regime. Quasi-instantaneous acceleration of conduction band electrons in the polar gallium arsenide lattice by the electric field of intense THz pulses and subsequent probing of the mid-infrared transmission reveals a modulation of the transmission along the THz-mid-infrared delay coordinate with the frequency of the LO phonon. These modulations directly display the relative phase between the electron motion and its surrounding virtual phonon cloud. Quantum kinetic model calculations fully account for the observed phenomena. (orig.)

  6. Joint Services Electronics Program: Basic Research in Electronics (JSEP) at the University of Texas at Austin. Appendix.

    Science.gov (United States)

    1986-12-31

    applications in tration on the temperature response, an effect also found the processing of Si and III-V compound semiconductors in silicon by Seidel et al. (5...Dannefaer, B. Hogg, and D. Kerr, "Defect Characterization in V. Ckil mo and Cofmment Gallium Arsenide By Positron Annihilation ," in Thirteenth We...unnecessary In "A ’I.I %’ S. 4 Brower et l. A schematic of the experimental arrangement emplSyed for application of the homodyne spectroscopy technique to

  7. Materials processing in zero gravity. [space manufacturing

    Science.gov (United States)

    Wuenscher, H. F.

    1973-01-01

    Manufacturing processes which are expected to show drastic changes in a space environment due to the absence of earth gravity are classified according to (1) buoyancy and thermal convection sensitive processes and (2) processes where molecular forces like cohesion and adhesion remain as the relatively strongest and hence controlling factors. Some specific process demonstration experiments carried out during the Apollo 14 mission and in the Skylab program are described. These include chemical separation by electrophoresis, the M551 metals melting experiment, the M552 exothermic brazing experiment, the M553 sphere forming experiment, the M554 composite casting experiment, and the M555 gallium arsenide crystal growth experiment.

  8. Lasers Induced Damage in Optical Materials: 1985. Proceedings of the Symposium on Optical Materials for High-Power Lasers (17th) Held in Boulder, Colorado on October 28-30, 1985

    Science.gov (United States)

    1988-07-01

    1985, pp. 1626-1633. [2] S. Dannefaer, B. Hogg, and D. Kerr, "Defect Characterization in Gallium Arsenide by Positron Annihilation ," Thirteenth...23, No. 4, 5, . " J. J.R. ;-!cteil, G.A. Al-Jumaily, K.C. Jungling, and A.C. Barron, "Properties of TiO2 , aridSiO 2 Thin Films Deposited Using ion...Sputter Deposited SiO 2 / TiO2 Coatings J. R. Sites and H. Demiryont Physics Department, Colorado State University Fort Collins, CO 80523 A-ray

  9. Formation of radiation-induced point defects in silicon doped thin films upon ion implantation and activating annealing

    International Nuclear Information System (INIS)

    Bublik, V.T.; Shcherbachev, K.D.; Komarnitskaya, E.A.; Parkhomenko, Yu.N.; Vygovskaya, E.A.; Evgen'ev, S.B.

    1999-01-01

    The formation and relaxation processes for radiation-induced defects in the implantation of 50 keV Si + ions into gallium arsenide and subsequent 10-min annealing in arsine at 850 deg. C have been studied by the triple-crystal X-ray diffractometry and secondary-ion mass spectroscopy techniques. It is shown that the existence of the vacancy-enriched layer stimulating diffusion of introduced dopants into the substrate surface can significantly affect the distribution profile of the dopant in the course of preparation of thin implanted layers

  10. Integration, gap formation, and sharpening of III-V heterostructure nanowires by selective etching

    DEFF Research Database (Denmark)

    Kallesoe, C.; Mølhave, Kristian; Larsen, K. F.

    2010-01-01

    Epitaxial growth of heterostructure nanowires allows for the definition of narrow sections with specific semiconductor composition. The authors demonstrate how postgrowth engineering of III-V heterostructure nanowires using selective etching can form gaps, sharpening of tips, and thin sections...... lithography is used for deposition of catalyst particles on trench sidewalls and the lateral growth of III-V nanowires is achieved from such catalysts. The selectivity of a bromine-based etch on gallium arsenide segments in gallium phosphide nanowires is examined, using a hydrochloride etch to remove the III...

  11. Detection and study of photo-generated spin currents in nonmagnetic semiconductor materials

    International Nuclear Information System (INIS)

    Miah, M. Idrish; Kityk, I.V.; Gray, E. MacA.

    2007-01-01

    The longitudinal current in Si-doped gallium arsenide was spin-polarized using circularly polarized light. The spin current was detected by the extraordinary Hall effect. An enhancement of Hall conductivity with increasing moderately Si-doping was found, indicating that the introduction of dopants increases the electronic spin polarization. This finding may provide an opportunity for controlling and manipulating nonmagnetic semiconductors via electron spin for operating device applications. Band energy calculations using pseudopotentials confirm the influence of Si content and electron-phonon interaction on the behaviour of the spin current and hence on the spin-dependent Hall voltage

  12. Using of solar energy in Republic of Georgia

    International Nuclear Information System (INIS)

    Meladze, N.

    1997-01-01

    The article presents the talk on the use of solar energy in Georgia given at the International Workshop on applied solar energy held in Tashkent(Uzbekistan) in June 1997. The main use of solar energy in the Republic is in solar heating systems developed and produced in Georgia. Presently 12 projects are in progress for effective use of renewable energy sources. Among them the research and development on photovoltaic cells on the basis of silicon and gallium arsenide solar cells. (A.A.D.)

  13. Detection and study of photo-generated spin currents in nonmagnetic semiconductor materials

    Energy Technology Data Exchange (ETDEWEB)

    Miah, M. Idrish [Nanoscale Science and Technology Centre, Griffith University, Nathan, Brisbane, QLD 4111 (Australia); Department of Physics, University of Chittagong, Chittagong 4331 (Bangladesh)], E-mail: m.miah@griffith.edu.au; Kityk, I.V. [Institute of Physics, J. Dlugosz University Czestochowa, PL-42201 Czestochowa (Poland); Gray, E. MacA. [Nanoscale Science and Technology Centre, Griffith University, Nathan, Brisbane, QLD 4111 (Australia)

    2007-10-15

    The longitudinal current in Si-doped gallium arsenide was spin-polarized using circularly polarized light. The spin current was detected by the extraordinary Hall effect. An enhancement of Hall conductivity with increasing moderately Si-doping was found, indicating that the introduction of dopants increases the electronic spin polarization. This finding may provide an opportunity for controlling and manipulating nonmagnetic semiconductors via electron spin for operating device applications. Band energy calculations using pseudopotentials confirm the influence of Si content and electron-phonon interaction on the behaviour of the spin current and hence on the spin-dependent Hall voltage.

  14. Absence of phase-dependent noise in time-domain reflectivity studies of impulsively excited phonons

    KAUST Repository

    Hussain, A.

    2010-06-17

    There have been several reports of phase-dependent noise in time-domain reflectivity studies of optical phonons excited by femtosecond laser pulses in semiconductors, semimetals, and superconductors. It was suggested that such behavior is associated with the creation of squeezed phonon states although there is no theoretical model that directly supports such a proposal. We have experimentally re-examined the studies of phonons in bismuth and gallium arsenide, and find no evidence of any phase-dependent noise signature associated with the phonons. We place an upper limit on any such noise at least 40–50 dB lower than previously reported.

  15. Initial development of a laser altimeter

    Science.gov (United States)

    Gilio, J. P.

    1985-09-01

    A design study was carried out of a small, expendable, self-contained laser altimeter for overwater operation at low altitude. A .904 micrometer Gallium Arsenide laser was used to build a prototype transmitter/ receiver at a cost of less than $600 and small enough to fit inside a 5 inch diameter cylinder, 5 inches long. Tests at a height of 120 feet above the surface of a lake resulted in a signal-to-noise ratio of 6, and validated the trade-off equation used in this study. A second test model, with design improvements incorporated, is predicted to yield a SNR of over 20 for an altitude of 150 meters.

  16. Infrared and millimeter waves v.14 millimeter components and techniques, pt.V

    CERN Document Server

    Button, Kenneth J

    1985-01-01

    Infrared and Millimeter Waves, Volume 14: Millimeter Components and Techniques, Part V is concerned with millimeter-wave guided propagation and integrated circuits. In addition to millimeter-wave planar integrated circuits and subsystems, this book covers transducer configurations and integrated-circuit techniques, antenna arrays, optoelectronic devices, and tunable gyrotrons. Millimeter-wave gallium arsenide (GaAs) IMPATT diodes are also discussed. This monograph is comprised of six chapters and begins with a description of millimeter-wave integrated-circuit transducers, focusing on vario

  17. Plating on difficult-to-plate metals: what's new

    International Nuclear Information System (INIS)

    Wiesner, H.J.

    1980-01-01

    Some of the changes since 1970 in procedures for plating on such materials as titanium, molybdenum, silicon, aluminum, and gallium arsenide are summarized. While basic procedures for plating some of these materials were developed as many as 30 to 40 years ago, changes in the end uses of the plated products have necessitated new plating processes. In some cases, vacuum techniques - such as ion bombardment, ion implantation, and vacuum metallization - have been introduced to improve the adhesion of electrodeposits. In other cases, these techniques have been used to deposit materials upon which electrodeposits are required

  18. The semiconductor doping with radiation defects via proton and alpha-particle irradiation. Review

    CERN Document Server

    Kozlov, V A

    2001-01-01

    Paper presents an analytical review devoted to semiconductor doping with radiation defects resulted from irradiation by light ions, in particular, by protons and alpha-particles. One studies formation of radiation defects in silicon, gallium arsenide and indium phosphide under light ion irradiation. One analyzes effect of proton and alpha-particle irradiation on electric conductivity of the above-listed semiconducting materials. Semiconductor doping with radiation defects under light ion irradiation enables to control their electrophysical properties and to design high-speed opto-, micro- and nanoelectronic devices on their basis

  19. Impacts of satellite power system technology

    Energy Technology Data Exchange (ETDEWEB)

    Moses, H.

    1979-01-01

    In the Satellite Power System (SPS) considered here, energy from the sun is collected by an array, 5 km*10.5 km in area, located in geostationary orbit. The array contains either silicon or gallium aluminum arsenide photovoltaic cells whose output is transformed to 2.45 GHz microwaves. These are beamed to earth to a 10 km*15 km rectifying antenna (rectenna) which rectifies the microwaves and interfaces the power with utility power lines. This paper deals with an assessment of both the environmental and societal aspects of an SPS. Under environmental aspects, attention is devoted to the health and ecological effects of both microwave radiation and other effects. 15 refs.

  20. Ab-initio study of the electronic structure of sup 1 sup 9 F implanted in GaAs and GaN crystals

    CERN Document Server

    Park, J H; Cho, H S; Shin, Y N

    1998-01-01

    We have studied the nuclear quadrupole interaction of a fluorine atom implanted in gallium arsenide and gallium nitride cluster models using the ab-initio Hartree-Fock theory. For the three possible fluorine sites in GaAs and GaN, we have determined the location of the implanted fluorine atom by using a self-consistent calculation, the electric field gradient at the implanted atom, and the electronic structure. Good agreement is found with experimental data wherever they are available. Predictions are made for the implanted fluorine site associated with the total energy and the electric field gradient which are expected to be measurable by a variety of experimental techniques.

  1. Electric field and space-charge distribution in SI GaAs: effect of high-energy proton irradiation

    CERN Document Server

    Castaldini, A; Polenta, L; Canali, C; Nava, F

    1999-01-01

    The effect of irradiation on semi-insulating gallium arsenide Schottky diodes has been investigated by means of surface potential measurements and spectroscopic techniques. Before and after irradiation the electric field exhibits a Mott barrier-like distribution, and the box-shaped space charge modifies its distribution with irradiation. The increase in density or the generation of some traps changes the compensation ratio producing a deeper active region and a more homogeneous distribution of the electric field. The latter phenomenon is also observed by EBIC images of edge-mounted diodes.

  2. Radiation performance of AlGaAs concentrator cells and expected performance of cascade structures

    International Nuclear Information System (INIS)

    Curtis, H.B.; Swartz, C.K.; Hart, R.E. Jr.

    1987-01-01

    Aluminum gallium arsenide, GaAs, silicon and InGaAs cells have been irradiated with 1 MeV electrons and 37 MeV protons. These cells are candidates for individual cells in a cascade structure. Data is presented for both electron and proton irradiation studies for one sun and a concentration level of 100X AMO. Results of calculations on the radiation resistance of cascade cell structures based on the individual cell data are also presented. Both series connected and separately connected structures are investigated

  3. Site control technique for quantum dots using electron beam induced deposition

    Energy Technology Data Exchange (ETDEWEB)

    Iizuka, Kanji; Jung, JaeHun; Yokota, Hiroshi [Nippon Institute of Technology, 4-1 Gakuendai, Miyashiro, Minami-saitama, Saitama 3458501 (Japan)

    2014-05-15

    To develop simple and high throughput sit definition technique for quantum dots (QDs), the electron beam induced deposition (EBID) method was used as desorption guide of phosphorus atoms form InP substrate. As the results one or a few indium (In) droplets (DLs) were created in the carbon grid pattern by thermal annealing at a temperature of 450°C for 10 min in the ultra high vacuum condition. The size of In DLs was larger than QDs, but arsenide DLs by molecular beam in growth chamber emitted wavelength of 1.028μm at 50K by photoluminescence measurement.

  4. Site control technique for quantum dots using electron beam induced deposition

    International Nuclear Information System (INIS)

    Iizuka, Kanji; Jung, JaeHun; Yokota, Hiroshi

    2014-01-01

    To develop simple and high throughput sit definition technique for quantum dots (QDs), the electron beam induced deposition (EBID) method was used as desorption guide of phosphorus atoms form InP substrate. As the results one or a few indium (In) droplets (DLs) were created in the carbon grid pattern by thermal annealing at a temperature of 450°C for 10 min in the ultra high vacuum condition. The size of In DLs was larger than QDs, but arsenide DLs by molecular beam in growth chamber emitted wavelength of 1.028μm at 50K by photoluminescence measurement

  5. The state of the art of thin-film photovoltaics

    International Nuclear Information System (INIS)

    Surek, T.

    1993-10-01

    Thin-film photovoltaic technologies, based on materials such as amorphous or polycrystalline silicon, copper indium diselenide, cadmium telluride, and gallium arsenide, offer the potential for significantly reducing the cost of electricity generated by photovoltaics. The significant progress in the technologies, from the laboratory to the marketplace, is reviewed. The common concerns and questions raised about thin films are addressed. Based on the progress to date and the potential of these technologies, along with continuing investments by the private sector to commercialize the technologies, one can conclude that thin-film PV will provide a competitive alternative for large-scale power generation in the future

  6. Studies of the phase transitions in UAs with neutron scattering

    International Nuclear Information System (INIS)

    Sinha, S.K.; Lander, G.H.; Shapiro, S.M.; Vogt, O.

    1980-01-01

    Uranium arsenide is known to order with the type-I antiferromagnetic (AF) structure at approx. 126 K, and exhibit a first-order transition to the type-IA AF structure at T/sub N//2. We have now reexamined these transitions with a single crystal. Above T/sub N/ UAs exhibits critical scattering suggesting a tendency to order with an incommensurate wavevector, but then suddenly orders with the AF-I structure. The analysis of the data shows the need to consider anisotropic exchange interactions of cubic symmetry between U moments

  7. Cold electronics for the liquid argon hadronic end-cap calorimeter of ATLAS

    International Nuclear Information System (INIS)

    Ban, J.; Brettel, H.; Cwienk, W.D.; Fent, J.; Kurchaninov, L.; Ladygin, E.; Oberlack, H.; Schacht, P.; Stenzel, H.; Strizenec, P.

    2006-01-01

    This paper describes the on-detector electronics of the ATLAS hadronic end-cap calorimeter (HEC). The electronics is operated in liquid argon; therefore attention is paid to its performance at low temperatures. The core of the electronics are Gallium Arsenide (GaAs) preamplifiers. We present design, layout and results of various tests of the preamplifier chips and summing boards. The calibration and signal cables have been studied under laboratory conditions and the signal distortion is modeled. All parts of the electronics have been produced, tested and assembled on the calorimeter modules. The summary of the commissioning tests is presented

  8. Integrated semiconductor optical sensors for chronic, minimally-invasive imaging of brain function.

    Science.gov (United States)

    Lee, Thomas T; Levi, Ofer; Cang, Jianhua; Kaneko, Megumi; Stryker, Michael P; Smith, Stephen J; Shenoy, Krishna V; Harris, James S

    2006-01-01

    Intrinsic optical signal (IOS) imaging is a widely accepted technique for imaging brain activity. We propose an integrated device consisting of interleaved arrays of gallium arsenide (GaAs) based semiconductor light sources and detectors operating at telecommunications wavelengths in the near-infrared. Such a device will allow for long-term, minimally invasive monitoring of neural activity in freely behaving subjects, and will enable the use of structured illumination patterns to improve system performance. In this work we describe the proposed system and show that near-infrared IOS imaging at wavelengths compatible with semiconductor devices can produce physiologically significant images in mice, even through skull.

  9. Microscopic analysis of the valence band and impurity band theories of (Ga,Mn)As

    Czech Academy of Sciences Publication Activity Database

    Mašek, Jan; Máca, František; Kudrnovský, Josef; Makarovský, O.; Eaves, L.; Campion, R. P.; Edmonds, K. W.; Rushforth, A.W.; Foxon, C. T.; Gallagher, B. L.; Novák, Vít; Sinova, Jairo; Jungwirth, Tomáš

    2010-01-01

    Roč. 105, č. 22 (2010), 227202/1-227202/4 ISSN 0031-9007 R&D Projects: GA ČR GA202/07/0456; GA MŠk LC510; GA AV ČR KAN400100652 EU Projects: European Commission(XE) 215368 - SemiSpinNet; European Commission(XE) 214499 - NAMASTE Grant - others:AV ČR(CZ) AP0801 Program:Akademická prémie - Praemium Academiae Institutional research plan: CEZ:AV0Z10100520 Keywords : gallium arsenide * semiconductors Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 7.621, year: 2010

  10. Small-scale and large-scale testing of photo-electrochemically activated leaching technology in Aprelkovo and Delmachik Mines

    Science.gov (United States)

    Sekisov, AG; Lavrov, AYu; Rubtsov, YuI

    2017-02-01

    The paper gives a description of tests and trials of the technology of heap gold leaching from rebellious ore in Aprelkovo and Delmachik Mines. Efficiency of leaching flowsheets with the stage-wise use of activated solutions of different reagents, including active forms of oxygen, is evaluated. Carbonate-peroxide solutions are used at the first stage of leaching to oxidize sulfide and sulfide-arsenide ore minerals to recover iron and copper from them. The second stage leaching uses active cyanide solutions to leach encapsulated and disperse gold and silver.

  11. Measurements of electrophysical characteristics of semiconductor structures with the use of microwave photonic crystals

    Energy Technology Data Exchange (ETDEWEB)

    Usanov, D. A., E-mail: UsanovDA@info.sgu.ru [Chernyshevsky National Research State University (Russian Federation); Nikitov, S. A. [Russian Academy of Sciences, Kotelnikov Institute of Radio Engineering and Electronics (Russian Federation); Skripal, A. V.; Ponomarev, D. V.; Latysheva, E. V. [Chernyshevsky National Research State University (Russian Federation)

    2016-12-15

    A method is proposed for the measurement of the electrophysical characteristics of semiconductor structures: the electrical conductivity of the n layer, which plays the role of substrate for a semiconductor structure, and the thickness and electrical conductivity of the strongly doped epitaxial n{sup +} layer. The method is based on the use of a one-dimensional microwave photonic crystal with a violation of periodicity containing the semiconductor structure under investigation. The characteristics of epitaxial gallium-arsenide structures consisting of an epitaxial layer and the semi-insulating substrate measured by this method are presented.

  12. Etching of semiconductor cubic crystals: Determination of the dissolution slowness surfaces

    Science.gov (United States)

    Tellier, C. R.

    1990-03-01

    Equations of the representative surface of dissolution slowness for cubic crystals are determined in the framework of a tensorial approach of the orientation-dependent etching process. The independent dissolution constants are deduced from symmetry considerations. Using previous data on the chemical etching of germanium and gallium arsenide crystals, some possible polar diagrams of the dissolution slowness are proposed. A numerical and graphical simulation method is used to obtain the derived dissolution shapes. The influence of extrema in the dissolution slowness on the successive dissolution shapes is also examined. A graphical construction of limiting shapes of etched crystals appears possible using the tensorial representation of the dissolution slowness.

  13. Microwave monolithic integrated circuit development for future spaceborne phased array antennas

    Science.gov (United States)

    Anzic, G.; Kascak, T. J.; Downey, A. N.; Liu, D. C.; Connolly, D. J.

    1984-01-01

    The development of fully monolithic gallium arsenide (GaAs) receive and transmit modules suitable for phased array antenna applications in the 30/20 gigahertz bands is presented. Specifications and various design approaches to achieve the design goals are described. Initial design and performance of submodules and associated active and passive components are presented. A tradeoff study summary is presented, highlighting the advantages of a distributed amplifier approach compared to the conventional single power source designs. Previously announced in STAR as N84-13399

  14. Possible power source found for fiber optic lasers

    International Nuclear Information System (INIS)

    Krupa, Tyler J.

    2000-01-01

    Scientists at the US Department of Energy's Sandia National Laboratory are researching ways to use a new semiconductor alloy, indium gallium arsenide nitride (InGaAsN), as as photovoltaic power source for lasers in fiber optics and space communication satellites. The efficiency of electricity-generating solar cells utilizing InGaAsN is predicted to be 40%-nearly twice the efficiency rate of a standard silicon solar cell. The use of InGaAsN in solar cells is a potential power source for satellites and other space systems. (AIP) (c)

  15. Errors in short circuit measurements due to spectral mismatch between sunlight and solar simulators

    Science.gov (United States)

    Curtis, H. B.

    1976-01-01

    Errors in short circuit current measurement were calculated for a variety of spectral mismatch conditions. The differences in spectral irradiance between terrestrial sunlight and three types of solar simulator were studied, as well as the differences in spectral response between three types of reference solar cells and various test cells. The simulators considered were a short arc xenon lamp AMO sunlight simulator, an ordinary quartz halogen lamp, and an ELH-type quartz halogen lamp. Three types of solar cells studied were a silicon cell, a cadmium sulfide cell and a gallium arsenide cell.

  16. The fractional quantum Hall effect goes organic

    International Nuclear Information System (INIS)

    Smet, Jurgen

    2000-01-01

    Physicists have been fascinated by the behaviour of two-dimensional electron gases for the past two decades. All of these experiments were performed on inorganic semiconductor devices, most of them based on gallium arsenide. Indeed, until recently it was thought that the subtle effects that arise due to electron-electron interactions in these devices required levels of purity that could not be achieved in other material systems. However, Hendrik Schoen, Christian Kloc and Bertram Batlogg of Bell Laboratories in the US have now observed the fractional quantum Hall effect - the most dramatic signature of electron-electron interactions - in two organic semiconductors. (U.K.)

  17. Precision density measuring equipment: Design, selected examples

    International Nuclear Information System (INIS)

    Karasinski, T.; Patzelt, K.; Dieker, C.; Hansen, H.; Wenzl, H.; Schober, T.

    1987-06-01

    The report deals with solids density measurement using the pyknometer, the hydrostatic balance, or the floating specimen method. The mathematical relations are derived, and error sources are shown. A detailed description is given of a measuring set-up for measuring the density of solids and liquids. An error calculation is presented. After explaining the determination of density of a standard solid body, the report describes the density measurement of monocrystalline germanium, of niobium-tritide, Ni 3 Al, Ge-Si, and gallium arsenide, the determination of space-lattice expansion by hydrogen isotopes, and of the purity of H-D mixtures. (GG) [de

  18. Diffusion length variation and proton damage coefficients for InP/In(x)Ga(1-x)As/GaAs solar cells

    Science.gov (United States)

    Jain, R. K.; Weinberg, I.; Flood, D. J.

    1993-01-01

    Indium phosphide solar cells are more radiation resistant than gallium arsenide and silicon solar cells, and their growth by heteroepitaxy offers additional advantages leading to the development of lighter, mechanically strong and cost-effective cells. Changes in heteroepitaxial InP cell efficiency under 0.5 and 3 MeV proton irradiations are explained by the variation in the minority-carrier diffusion length. The base diffusion length versus proton fluence is calculated by simulating the cell performance. The diffusion length damage coefficient K(L) is plotted as a function of proton fluence.

  19. Diffusion length variation in 0.5- and 3-MeV-proton-irradiated, heteroepitaxial indium phosphide solar cells

    Science.gov (United States)

    Jain, Raj K.; Weinberg, Irving; Flood, Dennis J.

    1993-01-01

    Indium phosphide (InP) solar cells are more radiation resistant than gallium arsenide (GaAs) and silicon (Si) solar cells, and their growth by heteroepitaxy offers additional advantages leading to the development of light weight, mechanically strong, and cost-effective cells. Changes in heteroepitaxial InP cell efficiency under 0.5- and 3-MeV proton irradiations have been explained by the variation in the minority-carrier diffusion length. The base diffusion length versus proton fluence was calculated by simulating the cell performance. The diffusion length damage coefficient, K(sub L), was also plotted as a function of proton fluence.

  20. Intact mammalian cell function on semi-conductor nanowire arrays: new perspectives for cell-based biosensing

    DEFF Research Database (Denmark)

    Berthing, Trine; Bonde, Sara; Sørensen, Claus Birger

    2011-01-01

    . A selection of critical cell functions and pathways are shown not to be impaired, including cell adhesion, membrane integrity, intracellular enzyme activity, DNA uptake, cytosolic and membrane protein expression, and the neuronal maturation pathway. The results demonstrate the low invasiveness of InAs NW......Nanowires (NWs) are attracting more and more interest due to their potential cellular applications, such as delivery of compounds or sensing platforms. Arrays of vertical indium-arsenide (InAs) NWs are interfaced with human embryonic kidney cells and rat embryonic dorsal root ganglion neurons...