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Sample records for intrinsic point defects

  1. Intrinsic point defects in aluminum antimonide

    OpenAIRE

    Åberg, Daniel; Erhart, Paul; Williamson, Andrew J.; Lordi, Vincenzo

    2010-01-01

    Calculations within density functional theory on the basis of the local density approximation are carried out to study the properties of intrinsic point defects in aluminum antimonide. Special care is taken to address finite-size effects, band gap error, and symmetry reduction in the defect structures. The correction of the band gap is based on a set of GW calculations. The most important defects are identified to be the aluminum interstitial $Al_{i,Al}^{1+}$, the antimony antisites $Sb_{Al}^...

  2. Intrinsic point defects in zinc oxide. Modeling of structural, electronic, thermodynamic and kinetic properties

    Energy Technology Data Exchange (ETDEWEB)

    Erhart, P.

    2006-07-01

    The present dissertation deals with the modeling of zinc oxide on the atomic scale employing both quantum mechanical as well as atomistic methods. The first part describes quantum mechanical calculations based on density functional theory of intrinsic point defects in ZnO. To begin with, the geometric and electronic structure of vacancies and oxygen interstitials is explored. In equilibrium oxygen interstitials are found to adopt dumbbell and split interstitial configurations in positive and negative charge states, respectively. Semi-empirical self-interaction corrections allow to improve the agreement between the experimental and the calculated band structure significantly; errors due to the limited size of the supercells can be corrected by employing finite-size scaling. The effect of both band structure corrections and finite-size scaling on defect formation enthalpies and transition levels is explored. Finally, transition paths and barriers for the migration of zinc as well as oxygen vacancies and interstitials are determined. The results allow to interpret diffusion experiments and provide a consistent basis for developing models for device simulation. In the second part an interatomic potential for zinc oxide is derived. To this end, the Pontifix computer code is developed which allows to fit analytic bond-order potentials. The code is subsequently employed to obtain interatomic potentials for Zn-O, Zn-Zn, and O-O interactions. To demonstrate the applicability of the potentials, simulations on defect production by ion irradiation are carried out. (orig.)

  3. Intrinsic point defects in inorganic perovskite CsPbI3 from first-principles prediction

    KAUST Repository

    Li, Yifan

    2017-10-19

    Cubic inorganic perovskite CsPbI3 is a direct bandgap semiconductor, which is promising for optoelectronic applications, such as solar cells, light emitting diodes, and lasers. The intrinsic defects in semiconductors play crucial roles in determining carrier conductivity, the efficiency of carrier recombination, and so on. However, the thermodynamic stability and intrinsic defect physics are still unclear for cubic CsPbI3. By using the first-principles calculations, we study the thermodynamic process and find out that the window for CsPbI3 growth is quite narrow and the concentration of Cs is important for cubic CsPbI3 growth. Under Pb-rich conditions, VPb and VI can pin the Fermi energy in the middle of the bandgap, which results in a low carrier concentration. Under Pb-poor conditions, VPb is the dominant defect and the material has a high concentration of hole carriers with a long lifetime. Our present work gives an insight view of the defect physics of cubic CsPbI3 and will be beneficial for optoelectronic applications based on cubic CsPbI3 and other analogous inorganic perovskites.

  4. Intrinsic point defects in off-stoichiometric Cu2ZnSnSe4: A neutron diffraction study

    Science.gov (United States)

    Gurieva, Galina; Valle Rios, Laura Elisa; Franz, Alexandra; Whitfield, Pamela; Schorr, Susan

    2018-04-01

    This work is an experimental study of intrinsic point defects in off-stoichiometric kesterite type CZTSe by means of neutron powder diffraction. We revealed the existence of copper vacancies (VCu), various cation anti site defects (CuZn, ZnCu, ZnSn, SnZn, and CuZn), as well as interstitials (Cui, Zni) in a wide range of off-stoichiometric polycrystalline powder samples synthesized by the solid state reaction. The results show that the point defects present in off-stoichiometric CZTSe agree with the off-stoichiometry type model, assuming certain cation substitutions accounting for charge balance. In addition to the known off-stoichiometry types A-H, new types (I-L) have been introduced. For the very first time, a correlation between the chemical composition of the CZTSe kesterite type phase and the occurring intrinsic point defects is presented. In addition to the off-stoichiometry type specific defects, the Cu/Zn disorder is always present in the CZTSe phase. In Cu-poor/Zn-rich CZTSe, a composition considered as the one that delivers the best photovoltaic performance, mainly copper vacancies, ZnCu and ZnSn anti sites are present. Also, this compositional region shows the lowest degree of Cu/Zn disorder.

  5. Electron paramagnetic resonance of intrinsic point defects in GaAs following plastic deformation

    International Nuclear Information System (INIS)

    Benakki-Stiet, S.

    1988-01-01

    Defects generated in GaAs by a plastic deformation were studied to see if these defects, particularly anionic antisites associated with the deep donor EL2, were the same as those presented in the raw growth material, or the same as those which can be created in a high concentration by electron or neutron irradiation. Results show that there are different types of anionic antisites, so the subset associated with EL2 was identified. The apparent correlation between EL2 and dislocation density is discussed [fr

  6. Ab initio analysis of a vacancy and a self-interstitial near single crystal silicon surfaces: Implications for intrinsic point defect incorporation during crystal growth from a melt

    Energy Technology Data Exchange (ETDEWEB)

    Kamiyama, Eiji; Sueoka, Koji [Department of Communication Engineering, Okayama Prefectural University, 111 Kuboki, Soja, Okayama 719-1197 (Japan); Vanhellemont, Jan [Department of Solid State Sciences, Ghent University, Krijgslaan 281-S1, Gent 9000 (Belgium)

    2012-10-15

    The microscopic model of the Si (001) crystal surface was investigated by first principles calculations to clarify the behavior of intrinsic point defects near crystal surfaces. A c(4 x 2) structure model was used to describe the crystal surface in contact with vacuum. The calculations show lower formation energy near the surface and the existence of formation energy differences between the surface and the bulk for both types of intrinsic point defects. The tetrahedral (T)-site and the dumbbell (DB)-site, in which a Si atom is captured from the surface and forms a self-interstitial, are found as stable sites near the third atomic layer. The T-site has a barrier of 0.48 eV, whereas the DB-site has no barrier for the interstitial to penetrate into the crystal from the vacuum. Si atoms in a melt can migrate and reach at the third layer during crystal growth when bulk diffusion coefficient is used. Therefore, the melt/solid interface is always a source of intrinsic point defects. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  7. Intrinsic point defects in β-In2S3 studied by means of hybrid density-functional theory

    Science.gov (United States)

    Ghorbani, Elaheh; Albe, Karsten

    2018-03-01

    We have employed first principles total energy calculations in the framework of density functional theory, with plane wave basis sets and screened exchange hybrid functionals to study the incorporation of intrinsic defects in bulk β-In2S3. The results are obtained for In-rich and S-rich experimental growth conditions. The charge transition level is discussed for all native defects, including VIn, VS, Ini, Si, SIn, and InS, and a comparison between the theoretically calculated charge transition levels and the available experimental findings is presented. The results imply that β-In2S3 shows n-type conductivity under both In-rich and S-rich growth conditions. The indium antiisite (InS), the indium interstitial (Ini), and the sulfur vacancy ( VS ' ) are found to be the leading sources of sample's n-type conductivity. When going from the In-rich to the S-rich condition, the conductivity of the material decreases; however, the type of conductivity remains unchanged.

  8. A study on density functional theory of the effect of pressure on the formation and migration enthalpies of intrinsic point defects in growing single crystal Si

    Science.gov (United States)

    Sueoka, Koji; Kamiyama, Eiji; Kariyazaki, Hiroaki

    2012-05-01

    In 1982, Voronkov presented a model describing point defect behavior during the growth of single crystal Si from a melt and derived an expression to predict if the crystal was vacancy- or self-interstitial-rich. Recently, Vanhellemont claimed that one should take into account the impact of compressive stress introduced by the thermal gradient at the melt/solid interface by considering the hydrostatic pressure dependence of the formation enthalpy of the intrinsic point defects. To evaluate the impact of thermal stress more correctly, the pressure dependence of both the formation enthalpy (Hf) and the migration enthalpy (Hm) of the intrinsic point defects should be taken into account. Furthermore, growing single crystal Si is not under hydrostatic pressure but almost free of external pressure (generally in Ar gas under reduced pressure). In the present paper, the dependence of Hf and Hm on the pressure P, or in other words, the pressure dependence of the formation energy (Ef) and the relaxation volume (vf), is quantified by density functional theory calculations. Although a large number of ab initio calculations of the properties of intrinsic point defects have been published during the last years, calculations for Si crystals under pressure are rather scarce. For vacancies V, the reported pressure dependences of HfV are inconsistent. In the present study, by using 216-atom supercells with a sufficient cut-off energy and mesh of k-points, the neutral I and V are found to have nearly constant formation energies EfI and EfV for pressures up to 1 GPa. For the relaxation volume, vfI is almost constant while vfV decreases linearly with increasing pressure P. In case of the hydrostatic pressure Ph, the calculated formation enthalpy HfI and migration enthalpy HmI at the [110] dumbbell site are given by HfI = 3.425 - 0.057 × Ph (eV) and HmI = 0.981 - 0.039 × Ph (eV), respectively, with Ph given in GPa. The calculated HfV and HmV dependencies on Ph given by HfV = 3.543 - 0

  9. Intrinsic thermal expansion of crystal defects

    International Nuclear Information System (INIS)

    Ganne, J.-P.

    1981-02-01

    Although the phenomenon of thermal expansion has long been known, the intrinsic thermal expansion coefficient (ITEC) βsub(d) of a point defect, derived from its formation volume vsub(d), has never been measured directly. The differential dilatometer by interferometry built by ASTY and GILDER is described. It has allowed βsub(d) to be measured for several defects. Vacancies and small interstitial loops were produced in aluminium by low temperature (20 K) fast neutron irradiation followed by an anneal up to the beginning of stage III (160 K). The very high value of the measured ratio βsub(d)/β 0 (12+-4) is comparable with a lattice statics calculated (42) value (11.5 0 [fr

  10. Simple intrinsic defects in InAs :

    Energy Technology Data Exchange (ETDEWEB)

    Schultz, Peter Andrew

    2013-03-01

    This Report presents numerical tables summarizing properties of intrinsic defects in indium arsenide, InAs, as computed by density functional theory using semi-local density functionals, intended for use as reference tables for a defect physics package in device models.

  11. Theoretical study of the impact of stress and interstitial oxygen on the behavior of intrinsic point defects in growing Czochralski Si crystals

    Science.gov (United States)

    Sueoka, K.; Nakamura, K.; Vanhellemont, J.

    2017-09-01

    For the development of crystal pulling processes for 450 mm-diameter defect-free Si crystals, it is important to evaluate the impact of thermal stress on intrinsic point defect behavior during crystal growth. In a crystal growing from a melt, the melt/solid interface can be considered as being stress-free. Due to that the thermal stress in the growing substrate near the interface is internal plane stress. Previously, we evaluated the impact of (001) planar-isotropic stress on the formation enthalpy (Hf) of the vacancy (V) and the self-interstitial (I) using density functional theory (DFT) calculations, and explained quantitatively the published experimental values of the so-called ;Voronkov criterion;. The thermal stress in a growing crystal is indeed planar but is not isotropic in the plane except for the central region of the crystal. The purpose of the present study is to estimate the impact of planar-anisotropic stress on the formation enthalpy Hf of V and I. It is found that the three stress dependencies of σx: σy=1: 1 (planar-isotropic), 2: 1, 5: 1 (planar-anisotropic) are close to each other, independent of the assumption of isotropic or anisotropic planar stress. This is the reason why the experimental results obtained over the whole radial direction of the crystal are well reproduced by the calculated results assuming planar-isotropic stress. A uniaxial stress dependence which is a good assumption for the crystal peripheral region, leads also to results that are close to those for the planar stress dependence. Also the mechanisms behind the experimentally observed impact of interstitial oxygen (Oi), introduced during Czochralski Si growth, on V and I concentrations are clarified. DFT calculations are performed to obtain the formation energies (Ef) of V and I at all sites within a sphere with 5 Å radius around the Oi atom. Formation (vibration) entropy (Sf) calculations for V and I are also performed. It is found that both EfV and SfV of V in the zigzag

  12. Production of point defects

    International Nuclear Information System (INIS)

    Zuppiroli, L.

    1975-01-01

    Vacancies at thermodynamic equilibrium and the annealing of these defects are studied first, after which electron irradiations are dealt with. The displacement threshold energy concept is introduced. Part three concerns heavy ion and neutron irradiations. Displacement cascades and the thermal spike concept are discussed [fr

  13. Point defects dynamics in a stress field

    International Nuclear Information System (INIS)

    Smetniansky de De Grande, Nelida.

    1989-01-01

    The dependence of anisotropic defect diffusion on stress is studied for a hexagonal close packed (hcp) material under irradiation and uniaxially stressed. The diffusion is described as a discrete process of thermally activated jumps. It is shown that the presence of an external stress field enhances the intrinsic anisotropic diffusion, being this variation determined by the defect dipole tensors' symmetry in the equilibrium and saddle point configurations. Also, the point defect diffusion equations to sinks, like edge dislocations and spherical cavities, are solved and the sink strengths are calculated. The conclusion is that the dynamics of the interaction between defects and sinks is controlled by the changes in diffusivity induced by stress fields. (Author) [es

  14. Point defects in nickel

    International Nuclear Information System (INIS)

    Peretto, P.

    1969-01-01

    The defects in electron irradiated nickel (20 deg. K) or neutron irradiated nickel (28 deg. K) are studied by simultaneous analysis using the magnetic after-effect, electron microscopy and electrical resistivity recovery. We use zone refined nickel (99.999 per cent) which, for some experiments, is alloyed with a small amount of iron (for example 0.1 per cent Fe). The temperature dependant electrical recovery may be divided in four stages. The sub-stages I B (31 deg. K), I C (42 deg. K), I D (from to 57 deg. K) and I E (62 deg. K) of stage I are due to the disappearance of single interstitials into vacancies. The interstitial defect has a split configuration with a migration energy of about 0.15 eV. In the close pair which disappears in stage I B the interstitial is found to be in a 3. neighbour position whilst in stage I D it is near the direction from the vacancy. In stage I E there is no longer any interaction between the interstitial and the vacancy. The stage II is due to more complicated interstitial defects: di-interstitials for stage II B (84 deg. K) and larger and larger interstitial loops for the following sub-stages. The loops may be seen by electron microscopy. Impurities can play the role of nucleation centers for the loops. Stages III A (370 deg. K) and III B (376 deg. K) are due to two types of di-vacancies. During stage IV (410 deg. K) the single vacancies migrate. Vacancy type loops and interstitial type loops grow concurrently and disappear at about 800 deg. K as observed by electron microscopy. (author) [fr

  15. Study on the intrinsic defects in tin oxide with first-principles method

    Science.gov (United States)

    Sun, Yu; Liu, Tingyu; Chang, Qiuxiang; Ma, Changmin

    2018-04-01

    First-principles and thermodynamic methods are used to study the contribution of vibrational entropy to defect formation energy and the stability of the intrinsic point defects in SnO2 crystal. According to thermodynamic calculation results, the contribution of vibrational entropy to defect formation energy is significant and should not be neglected, especially at high temperatures. The calculated results indicate that the oxygen vacancy is the major point defect in undoped SnO2 crystal, which has a higher concentration than that of the other point defect. The property of negative-U is put forward in SnO2 crystal. In order to determine the most stable defects much clearer under different conditions, the most stable intrinsic defect as a function of Fermi level, oxygen partial pressure and temperature are described in the three-dimensional defect formation enthalpy diagrams. The diagram visually provides the most stable point defects under different conditions.

  16. Simple intrinsic defects in GaAs : numerical supplement.

    Energy Technology Data Exchange (ETDEWEB)

    Schultz, Peter Andrew

    2012-04-01

    This Report presents numerical tables summarizing properties of intrinsic defects in gallium arsenide, GaAs, as computed by density functional theory. This Report serves as a numerical supplement to the results published in: P.A. Schultz and O.A. von Lilienfeld, 'Simple intrinsic defects in GaAs', Modelling Simul. Mater. Sci Eng., Vol. 17, 084007 (2009), and intended for use as reference tables for a defect physics package in device models. The numerical results for density functional theory calculations of properties of simple intrinsic defects in gallium arsenide are presented.

  17. Intrinsic Defects and H Doping in WO3

    KAUST Repository

    Zhu, Jiajie

    2017-01-18

    WO3 is widely used as industrial catalyst. Intrinsic and/or extrinsic defects can tune the electronic properties and extend applications to gas sensors and optoelectonics. However, H doping is a challenge to WO3, the relevant mechanisms being hardly understood. In this context, we investigate intrinsic defects and H doping by density functional theory and experiments. Formation energies are calculated to determine the lowest energy defect states. O vacancies turn out to be stable in O-poor environment, in agreement with X-ray photoelectron spectroscopy, and O-H bond formation of H interstitial defects is predicted and confirmed by Fourier transform infrared spectroscopy.

  18. Intrinsic defects in 3D printed materials

    OpenAIRE

    Bolton, Christopher; Dagastine, Raymond

    2015-01-01

    We discuss the impact of bulk structural defects on the coherence, phase and polarisation of light passing through transparent 3D printed materials fabricated using a variety of commercial print technologies.

  19. Extrinsic point defects in aluminum antimonide

    OpenAIRE

    Erhart, Paul; Åberg, Daniel; Lordi, Vincenzo

    2010-01-01

    We investigate thermodynamic and electronic properties of group IV (C, Si, Ge, Sn) and group VI (O, S, Se, Te) impurities as well as P and H in aluminum antimonide (AlSb) using first-principles calculations. To this end, we compute the formation energies of a broad range of possible defect configurations including defect complexes with the most important intrinsic defects. We also obtain relative scattering cross strengths for these defects to determine their impact on charge carrier mobility...

  20. Point-defect migration into an infinitesimal dislocation loop

    International Nuclear Information System (INIS)

    Woo, C.H.

    1981-11-01

    Point-defect migration into an infinitesimal dislocation loop in an isotropic linear elastic medium is described. Particular care has been taken to include the effects of the saddle-point shape anisotropy of the point defect. Expressions for the reaction radii and the bias are derived, both in the presence and absence of an external applied stress. These are found to depend on intrinsic parameters, such as the loop strength, the loop nature (vacancy or interstitial), the relaxation volume, the saddle-point shape, and extrinsic parameters, such as the magnitude and direction of the external stress, and the temperature. The implications of the results are discussed

  1. Charge mobility modification of semiconducting carbon nanotubes by intrinsic defects

    International Nuclear Information System (INIS)

    Bai, Hongcun; Ma, Yujia; Ma, Jinsuo; Mei, Jingnan; Tong, Yan; Ji, Yongqiang

    2017-01-01

    Charge carrier mobility is a central transport property in nanoscale electronics. Carbon nanotubes (CNTs) are supposed to have high carrier mobility. The preparation methods of CNTs have been greatly improved, but the defects always exist. This work presented first-principle investigations on the charge carrier mobility of carbon nanotubes containing several intrinsic defects. The charge carrier mobilities of zigzag (10, 0) tubes with Stone–Wales, mono vacant and 5/8/5 defects were studied as an example to explore the role of defects. Most carrier mobilities were decreased, but several values of mobility are unexpectedly increased upon the appearance of the defects. This interesting result is discussed based on the changes of the stretching modulus, the effective mass of the carrier and deformation potential constant induced by the defects. (paper)

  2. Point defects and atomic transport in crystals

    International Nuclear Information System (INIS)

    Lidiard, A.B.

    1981-02-01

    There are two principle aspects to the theory of atomic transport in crystals as caused by the action of point defects, namely (1) the calculation of relevant properties of the point defects (energies and other thermodynamic characteristics of the different possible defects, activation energies and other mobility parameters) and (2) the statistical mechanics of assemblies of defects, both equilibrium and non-equilibrium assemblies. In the five lectures given here both these aspects are touched on. The first two lectures are concerned with the calculation of relevant point defect properties, particularly in ionic crystals. The first lecture is more general, the second is concerned particularly with some recent calculations of the free volumes of formation of defects in various ionic solids; these solve a rather long-standing problem in this area. The remaining three lectures are concerned with the kinetic theory of defects mainly in relaxation, drift and diffusion situations

  3. Disorder and defects are not intrinsic to boron carbide.

    Science.gov (United States)

    Mondal, Swastik; Bykova, Elena; Dey, Somnath; Ali, Sk Imran; Dubrovinskaia, Natalia; Dubrovinsky, Leonid; Parakhonskiy, Gleb; van Smaalen, Sander

    2016-01-18

    A unique combination of useful properties in boron-carbide, such as extreme hardness, excellent fracture toughness, a low density, a high melting point, thermoelectricity, semi-conducting behavior, catalytic activity and a remarkably good chemical stability, makes it an ideal material for a wide range of technological applications. Explaining these properties in terms of chemical bonding has remained a major challenge in boron chemistry. Here we report the synthesis of fully ordered, stoichiometric boron-carbide B13C2 by high-pressure-high-temperature techniques. Our experimental electron-density study using high-resolution single-crystal synchrotron X-ray diffraction data conclusively demonstrates that disorder and defects are not intrinsic to boron carbide, contrary to what was hitherto supposed. A detailed analysis of the electron density distribution reveals charge transfer between structural units in B13C2 and a new type of electron-deficient bond with formally unpaired electrons on the C-B-C group in B13C2. Unprecedented bonding features contribute to the fundamental chemistry and materials science of boron compounds that is of great interest for understanding structure-property relationships and development of novel functional materials.

  4. Possible mechanism for d0 ferromagnetism mediated by intrinsic defects

    KAUST Repository

    Zhang, Zhenkui

    2014-01-01

    We examine the effects of several intrinsic defects on the magnetic behavior of ZnS nanostructures using hybrid density functional theory to gain insights into d0 ferromagnetism. Previous studies have predicted that the magnetism is due to a coupling between partially filled defect states. By taking into account the electronic correlations, we find an additional splitting of the defect states in Zn vacancies and thus the possibility of gaining energy by preferential filling of hole states, establishing ferromagnetism between spin polarized S 3p holes. We demonstrate a crucial role of neutral S vacancies in promoting ferromagnetism between positively charged S vacancies. S dangling bonds on the nanoparticle surface also induce ferromagnetism. This journal is

  5. Blockage of ultrafast and directional diffusion of Li atoms on phosphorene with intrinsic defects.

    Science.gov (United States)

    Zhang, Ruiqi; Wu, Xiaojun; Yang, Jinlong

    2016-02-21

    The diffusion of Li in electrode materials is a key factor for the charging/discharging rate capacity of a Li-ion battery (LIB). Recently, two-dimensional phosphorene has been proposed as a very promising electrode material due to its ultrafast and directional lithium diffusion, as well as large energy capacity. Herein, on the basis of density functional theory, we report that intrinsic point defects, including vacancy and stone-wales defects, will block the directional ultrafast diffusion of lithium in phosphorene. On the defect-free phosphorene, diffusion of Li along the zig-zag lattice direction is 1.6 billion times faster than along the armchair lattice direction, and 260 times faster than that in graphite. After introducing intrinsic vacancy and stone-wales defect, the diffusion energy barrier of Li along the zig-zag lattice direction increases sharply to the range of 0.17-0.49 eV, which blocks the ultrafast migration of lithium along the zig-zag lattice direction. Moreover, the open circuit voltage increases with the emergence of defects, which is not suitable for anode materials. In addition, the formation energies of the defects in phosphorene are considerably lower than those in graphene and silicene sheet; therefore, it is highly important to generate defect-free phosphorene for LIB applications.

  6. Theory and computerized simulation of interaction of point defects with grain boundaries

    International Nuclear Information System (INIS)

    Bojko, V.S.

    1987-01-01

    The issued results on mathematical simulation at the atomic level of formation and migration of point defects arising under radiation (of intrinsic point defects, helium atoms) in the region of grain boundary are analyzed. Simulation data on impurity atom interaction with grain boundaries are also considered

  7. Point defect relaxation volumes for copper

    International Nuclear Information System (INIS)

    Miller, K.M.

    1979-11-01

    The methods used for the determination of point defect relaxation volumes are discussed and it is shown that a previous interatomic potential derived for copper is inaccurate and results obtained using it are invalid. A new interatomic potential has been produced for copper and a computer simulation of point and planar defects carried out. A vacancy relaxation volume of -0.33 atomic volumes has been found with interstitial values in the range 1.7 to 2.0 atomic volumes. It is shown that these values in current theories of irradiation induced swelling lead to an anomalously high value for dislocation bias compared with that determined experimentally. (author)

  8. Effects of intrinsic defects on the electronic structure and magnetic properties of CoFe{sub 2}O{sub 4}: A first-principles study

    Energy Technology Data Exchange (ETDEWEB)

    Huang, Y.L.; Fan, W.B. [School of Materials Science and Engineering, Nanchang Hangkong University, Nanchang 330063 (China); Hou, Y.H., E-mail: hyhhyl@163.com [School of Materials Science and Engineering, Nanchang Hangkong University, Nanchang 330063 (China); Guo, K.X. [School of Materials Science and Engineering, Nanchang Hangkong University, Nanchang 330063 (China); Ouyang, Y.F. [Department of Physics, Guangxi University, Nanning 530004 (China); Liu, Z.W. [School of Materials Science and Engineering, South China University of Technology, Guangzhou 510640 (China)

    2017-05-01

    The cobalt ferrite (CoFe{sub 2}O{sub 4}) with spinel structure has achieved a great interest as a very important magnetic material which has covered a wide range of applications. The formation condition and energy of possible intrinsic point defects have been investigated by the first-principles calculations, and the effects of the intrinsic point defects on the electronic and magnetic properties of CoFe{sub 2}O{sub 4} have been analyzed. It is found that the growth conditions have a great effect on the formation energy of intrinsic point defects, and each point defect with its fully ionized state is the most stable for the intrinsic point defects with various charge states. In an oxygen rich environment, the cation vacancies are easy to form shallow acceptors, which is conducive to the strength of the p-type conductivity. While in the metal rich environment, the oxygen vacancies tend to form donors which lead to the n-type conductivity. There exists extra levels in the band gap when point defects are present, resulting in a reduction of the band gap. The net magnetic moment depends highly on the defects. - Highlights: • The intrinsic defects in CoFe{sub 2}O{sub 4} were investigated by first-principles calculation. • The effects of intrinsic defects on the electronic structures and magnetic properties of CoFe{sub 2}O{sub 4} were analyzed.

  9. Electronic structure of point defects in semiconductors

    International Nuclear Information System (INIS)

    Bruneval, Fabien

    2014-01-01

    This 'Habilitation a diriger des Recherches' memoir presents most of my scientific activities during the past 7 years, in the field of electronic structure calculations of defects in solids. Point defects (vacancies, interstitials, impurities) in functional materials are a key parameter to determine if these materials will actually fill the role they have been assigned or not. Indeed, the presence of defects cannot be avoided when the temperature is increased or when the material is subjected to external stresses, such as irradiation in the nuclear reactors and in artificial satellites with solar radiations. However, in many cases, defects are introduced in the materials on purpose to tune the electronic transport, optical or even magnetic properties. This procedure is called the doping of semiconductors, which is the foundation technique for transistors, diodes, or photovoltaic cells. However, doping is not always straightforward and unexpected features may occur, such as doping asymmetry or Fermi level pinning, which can only be explained by complex phenomena involving different types of defects or complexes of defects. In this context, the calculations of electronic structure ab initio is an ideal tool to complement the experimental observations, to gain the understanding of phenomena at the atomic level, and even to predict the properties of defects. The power of the ab initio calculations comes from their ability to describe any system of electrons and nuclei without any specific adjustment. But although there is a strong need for numerical simulations in this field, the ab initio calculations for defects are still under development as of today. The work presented in this memoir summarizes my contributions to methodological developments on this subject. These developments have followed two main tracks. The first topic is the better understanding of the unavoidable finite size effects. Indeed, defects in semiconductors or insulators are generally present in

  10. Point defects in lines in single crystalline phosphorene: directional migration and tunable band gaps.

    Science.gov (United States)

    Li, Xiuling; Ma, Liang; Wang, Dayong; Zeng, Xiao Cheng; Wu, Xiaojun; Yang, Jinlong

    2016-10-20

    Extended line defects in two-dimensional (2D) materials can play an important role in modulating their electronic properties. During the experimental synthesis of 2D materials, line defects are commonly generated at grain boundaries between domains of different orientations. In this work, twelve types of line-defect structures in single crystalline phosphorene are examined by using first-principles calculations. These line defects are typically formed via migration and aggregation of intrinsic point defects, including the Stone-Wales (SW), single or double vacancy (SV or DV) defects. Our calculated results demonstrate that the migration of point defects in phosphorene is anisotropic, for instance, the lowest migration energy barriers are 1.39 (or 0.40) and 2.58 (or 0.49) eV for SW (or SV) defects in zigzag and armchair directions, respectively. The aggregation of point defects into lines is energetically favorable compared with the separated point defects in phosphorene. In particular, the axis of line defects in phosphorene is direction-selective, depending on the composed point defects. The presence of line defects effectively modulates the electronic properties of phosphorene, rendering the defect-containing phosphorene either metallic or semiconducting with a tunable band gap. Of particular interest is the fact that the SV-based line defect can behave as a metallic wire, suggesting a possibility to fabricate a circuit with subnanometer widths in the semiconducting phosphorene for nanoscale electronic application.

  11. First principles predictions of intrinsic defects in aluminum arsenide, AlAs : numerical supplement.

    Energy Technology Data Exchange (ETDEWEB)

    Schultz, Peter Andrew

    2012-04-01

    This Report presents numerical tables summarizing properties of intrinsic defects in aluminum arsenide, AlAs, as computed by density functional theory. This Report serves as a numerical supplement to the results published in: P.A. Schultz, 'First principles predictions of intrinsic defects in Aluminum Arsenide, AlAs', Materials Research Society Symposia Proceedings 1370 (2011; SAND2011-2436C), and intended for use as reference tables for a defect physics package in device models.

  12. Effect of saddle-point anisotropy on point-defect drift-diffusion into straight dislocations

    International Nuclear Information System (INIS)

    Skinner, B.C.; Woo, C.H.

    1983-02-01

    Effects on point-defect drift-diffusion in the strain fields of edge or screw dislocations, due to the anisotropy of the point defect in its saddle-point configuration, are investigated. Expressions for sink strength and bias that include the saddle-point shape effect are derived, both in the absence and presence of an externally applied stress. These are found to depend on intrinsic parameters such as the relaxation volume and the saddle-point shape of the point defects, and extrinsic parameters such as temperature and the magnitude and direction of the externally applied stress with respect to the line direction and Burgers vector direction of the dislocation. The theory is applied to fcc copper and bcc iron. It is found that screw dislocations are biased sinks and that the stress-induced bias differential for the edge dislocations depends much more on the line direction than the Burgers vector direction. Comparison with the stress-induced bias differential due to the usual SIPA effect is made. It is found that the present effect causes a bias differential that is more than an order of magnitude larger

  13. Study of point defects in bismuth

    International Nuclear Information System (INIS)

    Bois, P.

    1987-03-01

    Single crystalline samples of bismuth, pure and n or p - doped by adding tellurium or tin, were electron irradiated at low temperature (4.2 K and 20 K). In the energy range 0.7 - 2.5 MeV, a displacement threshold energy of 13 eV and an athermal recombination volume of 150 atomic volumes were determined. Joint measurements of resistivity, magnetotransport and positron annihilation enabled to precised the nature of the annealing stages: 40-50 K, free migration of interstitials; 90-120 K long range migration of vacancy. Point defects have according to their nature a different effect on the electronic properties of bismuth: isolated Frenkel pairs are globally donnors with a charge of + 0.16 e- and the vacancy is donnor, which seems to attribute to it a negative formation volume. A simple model with non-deformating bands is no longer sufficient to explain the behaviour under irradiation: one has to take into account an acceptor level with a charge of - 0,27 e-, linked to the cascade-type defects and resonating with the valence band. It's position in the band overlap and it's width (8 meV) could be precised. In first approximation this coupling with less mobile carriers does not affect the simple additive rule which exists for relaxation times. Some yet obscure magnetic properties seem to be linked to this defect level [fr

  14. Numerical simulation of intrinsic defects in SiO sub 2 and Si sub 3 N sub 4

    CERN Document Server

    Gritsenko, V A; Shaposhnikov, A V; Morokov, Y N

    2001-01-01

    The electronic structure of main intrinsic defects in SiO sub 2 and Si sub 3 N sub 4 has been studied in the cluster approximation using the MINDO/3 method and the density functional method. The defects which are interesting from the point of view of their possibility to capture electrons and holes, three- and two-coordinated silicon atom, are considered. An energy gain is calculated for the capture of an electron or a hole by defects, taking into account the electronic and atomic relaxation. Experimental and calculated X-ray emission spectra for both materials are compared

  15. Point defects in GaAs and other semiconductors

    International Nuclear Information System (INIS)

    Ehrhart, P.; Karsten, K.; Pillukat, A.

    1993-01-01

    In order to understand the properties of intrinsic point defects and their interactions at high defect concentrations GaAs wafers were irradiated at 4.5 K with 3 MeV electrons up to a dose of 4 · 10 19 e - /cm 2 . The irradiated samples were investigated by X-ray Diffraction and optical absorption spectroscopy. The defect production increases linearly with irradiation dose and characteristic differences are observed for the two sublattices. The Ga-Frenkel pairs are strongly correlated and are characterized by much larger lattice relaxations (V rel = 2--3 atomic volumes) as compared to the As-Frenkel pairs (V rel ∼1 at. vol.). The dominating annealing stage around 300 K is attributed to the mobility of the Ga interstitial atoms whereas the As-interstitial atoms can recombine with their vacancies only around 500 K. These results are compared to those for InP, ZnSe and Ge. Implications for the understanding of the damage after ion irradiation and implantation are discussed

  16. Ab initio study of solute transition-metal interactions with point defects in bcc Fe

    NARCIS (Netherlands)

    Olsson, P.; Klaver, T.P.C.; Domain, C.

    2010-01-01

    The properties of 3d, 4d, and 5d transition-metal elements in ?-Fe have been studied using ab initio density-functional theory. The intrinsic properties of the solutes have been characterized as well as their interaction with point defects. Vacancies and interstitials of (110) and (111) orientations

  17. Implications of permeation through intrinsic defects in graphene on the design of defect-tolerant membranes for gas separation.

    Science.gov (United States)

    Boutilier, Michael S H; Sun, Chengzhen; O'Hern, Sean C; Au, Harold; Hadjiconstantinou, Nicolas G; Karnik, Rohit

    2014-01-28

    Gas transport through intrinsic defects and tears is a critical yet poorly understood phenomenon in graphene membranes for gas separation. We report that independent stacking of graphene layers on a porous support exponentially decreases flow through defects. On the basis of experimental results, we develop a gas transport model that elucidates the separate contributions of tears and intrinsic defects on gas leakage through these membranes. The model shows that the pore size of the porous support and its permeance critically affect the separation behavior, and reveals the parameter space where gas separation can be achieved regardless of the presence of nonselective defects, even for single-layer membranes. The results provide a framework for understanding gas transport in graphene membranes and guide the design of practical, selectively permeable graphene membranes for gas separation.

  18. Identifying the influence of the intrinsic defects in Gd-doped ZnO thin-films

    KAUST Repository

    Flemban, Tahani H.

    2016-02-08

    Gd-doped ZnO thin films were prepared using pulsed laser deposition at different oxygen pressures and varied Gd concentrations. The effects of oxygen deficiency-related defects on the Gd incorporation, optical and structural properties, were explored by studying the impact of oxygen pressure during deposition and post-growth thermal annealing in vacuum. Rutherford Backscattering Spectrometry revealed that the Gd concentration increases with increasing oxygen pressure for samples grown with the same Gd-doped ZnO target. Unexpectedly, the c-lattice parameter of the samples tends to decrease with increasing Gd concentration, suggesting that Gd-defect complexes play an important role in the structural properties. Using low-temperature photoluminescence(PL), Raman measurements and density functional theory calculations, we identified oxygen vacancies as the dominant intrinsic point defects. PL spectra show a defect band related to oxygen vacancies for samples grown at oxygen deficiency.

  19. Point defects and electric compensation in gallium arsenide single crystals

    International Nuclear Information System (INIS)

    Kretzer, Ulrich

    2007-01-01

    In the present thesis the point-defect budget of gallium arsenide single crystals with different dopings is studied. It is shown, in which way the concentration of the single point defects depende on the concentration of the dopants, the stoichiometry deviation, and the position of the Fermi level. For this serve the results of the measurement-technical characterization of a large number of samples, in the fabrication of which these parameters were directedly varied. The main topic of this thesis lies in the development of models, which allow a quantitative description of the experimentally studied electrical and optical properties of gallium arsenide single crystals starting from the point-defect concentrations. Because from point defects charge carriers can be set free, their concentration determines essentially the charge-carrier concentration in the bands. In the ionized state point defects act as scattering centers for free charge carriers and influence by this the drift mobility of the charge carriers. A thermodynamic modeling of the point-defect formation yields statements on the equilibrium concentrations of the point defects in dependence on dopant concentration and stoichiometry deviation. It is show that the electrical properties of the crystals observed at room temperature result from the kinetic suppression of processes, via which the adjustment of a thermodynamic equilibrium between the point defects is mediated [de

  20. The point-defect of carbon nanotubes anchoring Au nanoparticles

    DEFF Research Database (Denmark)

    Lv, Y. A.; Cui, Y. H.; Li, X. N.

    2010-01-01

    between Au clusters and CNTs by means of density functional theory calculations. Both experimental and theoretical studies show that point defects are the anchoring sites of Au nanoparticles. The mechanisms of enhanced bond between Au and CNTs via the point defects are explained by the analysis of density...

  1. Point defects in group IV semiconductors

    CERN Document Server

    Pizzini, S

    2017-01-01

    Aim of this book is to focus on the properties of defects in semiconductors of the fourth group under a physico-chemical approach, capable to demonstrate whether the full acknowledgement of their chemical nature could account for several problems encountered in practice or would suggest further experimental or theoretical accomplishments.

  2. Experimental investigation of defect-assisted and intrinsic water vapor permeation through ultrabarrier films

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Hyungchul [Woodruff School of Mechanical Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332 (United States); Singh, Ankit Kumar [School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332 (United States); Wang, Cheng-Yin; Fuentes-Hernandez, Canek; Kippelen, Bernard [School of Electrical and Computer Engineering, and Center for Organic Photonics and Electronics, Georgia Institute of Technology, Atlanta, Georgia 30332 (United States); Graham, Samuel [Woodruff School of Mechanical Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332 (United States); School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332 (United States)

    2016-03-15

    In the development of ultrabarrier films for packaging electronics, the effective water vapor transmission rate is a combination of permeation through pinhole defects and the intrinsic permeation through the actual barrier film. While it is possible to measure the effective permeation rate through barriers, it is important to develop a better understanding of the contribution from defects to the overall effective barrier performance. Here, we demonstrate a method to investigate independently defect-assisted permeation and intrinsic permeation rates by observing the degradation of a calcium layer encapsulated with a hybrid barrier film, that is, prepared using atomic layer deposition (ALD) and plasma enhanced deposition (PECVD). The results are rationalized using an analytical diffusion model to calculate the permeation rate as a function of spatial position within the barrier. It was observed that a barrier film consisting of a PECVD SiN{sub x} layer combined with an ALD Al{sub 2}O{sub 3}/HfO{sub x} nanolaminate resulted in a defect-assisted water vapor transmission rate (WVTR) of 4.84 × 10{sup −5} g/m{sup 2} day and intrinsic WVTR of 1.41 × 10{sup −4} g/m{sup 2} day at 50 °C/85% RH. Due to the low defect density of the tested barrier film, the defect-assisted WVTR was found to be three times lower than the intrinsic WVTR, and an effective (or total) WVTR value was 1.89 × 10{sup −4} g/m{sup 2} day. Thus, improvements of the barrier performance should focus on reducing the number of defects while also improving the intrinsic barrier performance of the hybrid layer.

  3. Atomistic Simulation of Intrinsic Defects and Trivalent and Tetravalent Ion Doping in Hydroxyapatite

    Directory of Open Access Journals (Sweden)

    Ricardo D. S. Santos

    2014-01-01

    Full Text Available Atomistic simulation techniques have been employed in order to investigate key issues related to intrinsic defects and a variety of dopants from trivalent and tetravalent ions. The most favorable intrinsic defect is determined to be a scheme involving calcium and hydroxyl vacancies. It is found that trivalent ions have an energetic preference for the Ca site, while tetravalent ions can enter P sites. Charge compensation is predicted to occur basically via three schemes. In general, the charge compensation via the formation of calcium vacancies is more favorable. Trivalent dopant ions are more stable than tetravalent dopants.

  4. Do points, levels and leaderboards harm intrinsic motivation? An empirical analysis of common gamification elements

    DEFF Research Database (Denmark)

    Mekler, Elisa D.; Brühlmann, Florian; Opwis, Klaus

    2013-01-01

    It is heavily debated within the gamification community whether specific game elements may actually undermine users' intrinsic motivation. This online experiment examined the effects of three commonly employed game design elements - points, leaderboard, levels - on users' performance, intrinsic...

  5. Disorder and defects are not intrinsic to boron carbide

    OpenAIRE

    Mondal, Swastik; Bykova, Elena; Dey, Somnath; Ali, Sk Imran; Dubrovinskaia, Natalia; Dubrovinsky, Leonid; Parakhonskiy, Gleb; van Smaalen, Sander

    2016-01-01

    A unique combination of useful properties in boron-carbide, such as extreme hardness, excellent fracture toughness, a low density, a high melting point, thermoelectricity, semi-conducting behavior, catalytic activity and a remarkably good chemical stability, makes it an ideal material for a wide range of technological applications. Explaining these properties in terms of chemical bonding has remained a major challenge in boron chemistry. Here we report the synthesis of fully ordered, stoichio...

  6. First principles studies of extrinsic and intrinsic defects in boron nitride nanotubes

    CSIR Research Space (South Africa)

    Mashapa, MG

    2012-10-01

    Full Text Available -1 Journal of Nanoscience and Nanotechnology 2012/ Vol. 12, 7807?7814 First Principles Studies of Extrinsic and Intrinsic Defects in Boron Nitride Nanotubes M. G. Mashapa 1, 2, ?, N. Chetty1, and S. Sinha Ray2, 3 1Physics Department, University...

  7. Oxidation behavior of graphene-coated copper at intrinsic graphene defects of different origins.

    Science.gov (United States)

    Kwak, Jinsung; Jo, Yongsu; Park, Soon-Dong; Kim, Na Yeon; Kim, Se-Yang; Shin, Hyung-Joon; Lee, Zonghoon; Kim, Sung Youb; Kwon, Soon-Yong

    2017-11-16

    The development of ultrathin barrier films is vital to the advanced semiconductor industry. Graphene appears to hold promise as a protective coating; however, the polycrystalline and defective nature of engineered graphene hinders its practical applications. Here, we investigate the oxidation behavior of graphene-coated Cu foils at intrinsic graphene defects of different origins. Macro-scale information regarding the spatial distribution and oxidation resistance of various graphene defects is readily obtained using optical and electron microscopies after the hot-plate annealing. The controlled oxidation experiments reveal that the degree of structural deficiency is strongly dependent on the origins of the structural defects, the crystallographic orientations of the underlying Cu grains, the growth conditions of graphene, and the kinetics of the graphene growth. The obtained experimental and theoretical results show that oxygen radicals, decomposed from water molecules in ambient air, are effectively inverted at Stone-Wales defects into the graphene/Cu interface with the assistance of facilitators.

  8. Insight into point defects and impurities in titanium from first principles

    Science.gov (United States)

    Nayak, Sanjeev K.; Hung, Cain J.; Sharma, Vinit; Alpay, S. Pamir; Dongare, Avinash M.; Brindley, William J.; Hebert, Rainer J.

    2018-03-01

    Titanium alloys find extensive use in the aerospace and biomedical industries due to a unique combination of strength, density, and corrosion resistance. Decades of mostly experimental research has led to a large body of knowledge of the processing-microstructure-properties linkages. But much of the existing understanding of point defects that play a significant role in the mechanical properties of titanium is based on semi-empirical rules. In this work, we present the results of a detailed self-consistent first-principles study that was developed to determine formation energies of intrinsic point defects including vacancies, self-interstitials, and extrinsic point defects, such as, interstitial and substitutional impurities/dopants. We find that most elements, regardless of size, prefer substitutional positions, but highly electronegative elements, such as C, N, O, F, S, and Cl, some of which are common impurities in Ti, occupy interstitial positions.

  9. Intrinsic electronic defects and multiple-atom processes in the oxidic semiconductor Ga2O3

    Science.gov (United States)

    Schmeißer, Dieter; Henkel, Karsten

    2018-04-01

    We report on the electronic structure of gallium oxide (Ga2O3) single crystals as studied by resonant photoelectron spectroscopy (resPES). We identify intrinsic electronic defects that are formed by mixed-atomic valence states. We differentiate three coexisting defect states that differ in their electronic correlation energy and their spatial localization lengths. Their relative abundance is described by a fractional ionicity with covalent and ionic bonding contributions. For Ga2O3, our analyses of the resPES data enable us to derive two main aspects: first, experimental access is given to determine the ionicity based on the original concepts of Pauling and Phillips. Second, we report on multi-atomic energy loss processes in the Ga2p core level and X-ray absorption data. The two experimental findings can be explained consistently in the same context of mixed-atomic valence states and intrinsic electronic defects.

  10. Point defects in hard-sphere crystals

    NARCIS (Netherlands)

    Pronk, S.; Frenkel, D.

    2001-01-01

    We report numerical calculations of the concentration of interstitials in hard-sphere crystals. We find that in a three-dimensional fcc hard-sphere crystal at the melting point, the concentration of interstitials is 2.7(4) × 10-8. This is some 3 orders of magnitude lower than the concentration of

  11. Point Defects in Hard Sphere Crystals

    OpenAIRE

    Pronk, Sander; Frenkel, Daan

    2001-01-01

    We report numerical calculations of the concentration of interstitials in hard-sphere crystals. We find that, in a three-dimensional fcc hard-sphere crystal at the melting point, the concentration of interstitials is 2 * 10^-8. This is some three orders of magnitude lower than the concentration of vacancies. A simple, analytical estimate yields a value that is in fair agreement with the numerical results.

  12. Age-related changes in immune reactivity: The influence of intrinsic defects and of a changed composition of the CD4+ T cell compartment

    NARCIS (Netherlands)

    Nijhuis, E.W.P.; Nagelkerken, L.

    1992-01-01

    Aging is accompanied by a decline in immune reactivity which to a major extent can be attributed to changes at the level of the regulatory CD4+ T cells. In addition to evidence pointing to intrinsic defects, resulting in improper responsiveness of lymphocytes, it is likely that many age-related

  13. Point defect weakened thermal contraction in monolayer graphene.

    Science.gov (United States)

    Zha, Xian-Hu; Zhang, Rui-Qin; Lin, Zijing

    2014-08-14

    We investigate the thermal expansion behaviors of monolayer graphene and three configurations of graphene with point defects, namely the replacement of one carbon atom with a boron or nitrogen atom, or of two neighboring carbon atoms by boron-nitrogen atoms, based on calculations using first-principles density functional theory. It is found that the thermal contraction of monolayer graphene is significantly decreased by point defects. Moreover, the corresponding temperature for negative linear thermal expansion coefficient with the maximum absolute value is reduced. The cause is determined to be point defects that enhance the mechanical strength of graphene and then reduce the amplitude and phonon frequency of the out-of-plane acoustic vibration mode. Such defect weakening of graphene thermal contraction will be useful in nanotechnology to diminish the mismatching or strain between the graphene and its substrate.

  14. Lattice stability and formation energies of intrinsic defects in Mg2Si and Mg2Ge via first principles simulations

    International Nuclear Information System (INIS)

    Jund, Philippe; Viennois, Romain; Tédenac, Jean-Claude; Colinet, Catherine; Hug, Gilles; Fèvre, Mathieu

    2013-01-01

    We report an ab initio study of the semiconducting Mg 2 X (with X = Si, Ge) compounds and in particular we analyze the formation energies of the different point defects with the aim of understanding the intrinsic doping mechanisms. We find that the formation energy of Mg 2 Ge is 50% larger than that of Mg 2 Si, in agreement with the experimental tendency. From a study of the stability and the electronic properties of the most stable defects, taking into account the growth conditions, we show that the main cause of the n doping in these materials comes from interstitial magnesium defects. Conversely, since other defects acting like acceptors such as Mg vacancies or multivacancies are more stable in Mg 2 Ge than in Mg 2 Si, this explains why Mg 2 Ge can be of n or p type, in contrast to Mg 2 Si. The finding that the most stable defects are different in Mg 2 Si and Mg 2 Ge and depend on the growth conditions is important and must be taken into account in the search for the optimal doping to improve the thermoelectric properties of these materials.

  15. Intrinsic defects and spectral characteristics of SrZrO3 perovskite

    Science.gov (United States)

    Li, Zhenzhang; Duan, He; Jin, Yahong; Zhang, Shaoan; Lv, Yang; Xu, Qinfang; Hu, Yihua

    2018-04-01

    First-principles calculations and experiment analysis were performed to study the internal relation between seven types of intrinsic defects and the persistent luminescence in SrZrO3 host material. The calculation shows that rich zirconium defects have the low energy cost and thus are easy to form. Zr vacancies are too high energy to play any role in defect which is related luminescence phenomenon of SrZrO3 phosphor. However, oxygen vacancies stand out as a likely candidate, because it can yield two carrier reservoirs: a fully-occupied singlet electron's reservoir which lies above the valence band maximum, and an empty triply degenerate hole's reservoir which is just below the conduction band minimum. Sr vacancies are not directly relevant to the persistent luminescence due to its too shallow electron trap level. The characteristics of these defects are fully explained by the equilibrium properties of SrZrO3. An experimental study of the thermoluminescence glow for these defects is conducted and the calculation is consistent with the experimental results. A mechanism of the persistent luminescence for SrZrO3:Pr3+, Eu3+ is explained according to oxygen vacancies trap center. Findings of this study may serve as theoretical references for controlling intrinsic traps by more refined experiments.

  16. Elastic dipoles of point defects from atomistic simulations

    Science.gov (United States)

    Varvenne, Céline; Clouet, Emmanuel

    2017-12-01

    The interaction of point defects with an external stress field or with other structural defects is usually well described within continuum elasticity by the elastic dipole approximation. Extraction of the elastic dipoles from atomistic simulations is therefore a fundamental step to connect an atomistic description of the defect with continuum models. This can be done either by a fitting of the point-defect displacement field, by a summation of the Kanzaki forces, or by a linking equation to the residual stress. We perform here a detailed comparison of these different available methods to extract elastic dipoles, and show that they all lead to the same values when the supercell of the atomistic simulations is large enough and when the anharmonic region around the point defect is correctly handled. But, for small simulation cells compatible with ab initio calculations, only the definition through the residual stress appears tractable. The approach is illustrated by considering various point defects (vacancy, self-interstitial, and hydrogen solute atom) in zirconium, using both empirical potentials and ab initio calculations.

  17. Thermodynamic, electronic, and magnetic properties of intrinsic vacancy defects in antiperovskite Ca3SnO

    Science.gov (United States)

    Batool, Javaria; Alay-e-Abbas, Syed Muhammad; Amin, Nasir

    2018-04-01

    The density functional theory based total energy calculations are performed to examine the effect of charge neutral and fully charged intrinsic vacancy defects on the thermodynamic, electronic, and magnetic properties of Ca3SnO antiperovskite. The chemical stability of Ca3SnO is evaluated with respect to binary compounds CaO, CaSn, and Ca2Sn, and the limits of atomic chemical potentials of Ca, Sn, and O atoms for stable synthesis of Ca3SnO are determined within the generalized gradient approximation parametrization scheme. The electronic properties of the pristine and the non-stoichiometric forms of this compound have been explored and the influence of isolated intrinsic vacancy defects (Ca, Sn, and O) on the structural, bonding, and electronic properties of non-stoichiometric Ca3SnO are analyzed. We also predict the possibility of achieving stable ferromagnetism in non-stoichiometric Ca3SnO by means of charge neutral tin vacancies. From the calculated total energies and the valid ranges of atomic chemical potentials, the formation energetics of intrinsic vacancy defects in Ca3SnO are evaluated for various growth conditions. Our results indicate that the fully charged calcium vacancies are thermodynamically stable under the permissible Sn-rich condition of stable synthesis of Ca3SnO, while tin and oxygen vacancies are found to be stable under the extreme Ca-rich condition.

  18. Point defects and defect clusters examined on the basis of some fundamental experiments

    International Nuclear Information System (INIS)

    Zuppiroli, L.

    1975-01-01

    On progressing from the centre of the defect to the surface the theoretical approach to a point defect passes from electronic theories to elastic theory. Experiments by which the point defect can be observed fall into two categories. Those which detect long-range effects: measurement of dimensional variations in the sample; measurement of the mean crystal parameter variation; elastic X-ray scattering near the nodes of the reciprocal lattice (Huang scattering). Those which detect more local effects: low-temperature resistivity measurement; positron capture and annihilation; local scattering far from the reciprocal lattice nodes. Experiments involving both short and long-range effects can always be found. This is the case for example with the dechanneling of α particles by defects. Certain of the experimental methods quoted above apply also to the study of point defect clusters. These methods are illustrated by some of their most striking results which over the last twenty years have refined our knowledge of point defects and defect clusters: length and crystal parameter measurements; diffuse X-ray scattering; low-temperature resistivity measurements; ion emission microscopy; electron microscopy; elastoresistivity [fr

  19. Investigation of intrinsic defect magnetic properties in wurtzite ZnO materials

    Science.gov (United States)

    Fedorov, A. S.; Visotin, M. A.; Kholtobina, A. S.; Kuzubov, A. A.; Mikhaleva, N. S.; Hsu, Hua Shu

    2017-10-01

    Theoretical and experimental investigations of the ferromagnetism induced by intrinsic defects inside wurtzite zinc oxide structures are performed using magnetic field-dependent circular dichroism (MCD-H), direct magnetization measurement (M-H) by superconducting quantum interference device (SQUID) as well as by generalized gradient density functional theory (GGA-DFT). To investigate localized magnetic moments of bulk material intrinsic defects - vacancies, interstitial atoms and Frenkel defects, various-size periodic supercells are calculated. It is shown that oxygen interstitial atoms (Oi) or zinc vacancies (Znv) generate magnetic moments of 1,98 и 1,26 μB respectively, however, the magnitudes are significantly reduced when the distance between defects increases. At the same time, the magnetic moments of oxygen Frenkel defects are large ( 1.5-1.8 μB) and do not depend on the distance between the defects. It is shown that the origin of the induced ferromagnetism in bulk ZnO is the extra spin density on the oxygen atoms nearest to the defect. Also dependence of the magnetization of ZnO (10 1 ̅ 0) and (0001) thin films on the positions of Oi and Znv in subsurface layers were investigated and it is shown that the magnetic moments of both defects are significantly different from the values inside bulk material. In order to check theoretical results regarding the defect induced ferromagnetism in ZnO, two thin films doped by carbon (C) and having Zn interstitials and oxygen vacancies were prepared and annealed in vacuum and air, respectively. According to the MCD-H and M-H measurements, the film, which was annealed in air, exhibits a ferromagnetic behavior, while the other does not. One can assume annealing of ZnO in vacuum should create oxygen vacancies or Zn interstitial atoms. At that annealing of the second C:ZnO film in air leads to essential magnetization, probably by annihilation of oxygen vacancies, formation of interstitial oxygen atoms or zinc vacancies

  20. Point defect engineering strategies to retard phosphorous diffusion in germanium.

    Science.gov (United States)

    Tahini, H A; Chroneos, A; Grimes, R W; Schwingenschlögl, U; Bracht, H

    2013-01-07

    The diffusion of phosphorous in germanium is very fast, requiring point defect engineering strategies to retard it in support of technological application. Density functional theory corroborated with hybrid density functional calculations are used to investigate the influence of the isovalent codopants tin and hafnium in the migration of phosphorous via the vacancy-mediated diffusion process. The migration energy barriers for phosphorous are increased significantly in the presence of oversized isovalent codopants. Therefore, it is proposed that tin and in particular hafnium codoping are efficient point defect engineering strategies to retard phosphorous migration.

  1. Point defect engineering strategies to retard phosphorous diffusion in germanium

    KAUST Repository

    Tahini, H. A.

    2013-01-01

    The diffusion of phosphorous in germanium is very fast, requiring point defect engineering strategies to retard it in support of technological application. Density functional theory corroborated with hybrid density functional calculations are used to investigate the influence of the isovalent codopants tin and hafnium in the migration of phosphorous via the vacancy-mediated diffusion process. The migration energy barriers for phosphorous are increased significantly in the presence of oversized isovalent codopants. Therefore, it is proposed that tin and in particular hafnium codoping are efficient point defect engineering strategies to retard phosphorous migration. © the Owner Societies 2013.

  2. Design of experiments on production and reaction of point defects

    Science.gov (United States)

    Kiritani, Michio

    Experiments designed by the author for the research of production and reaction of point defects during his stay in eight universities and research institutes for about forty years are reviewed. Two-step aging method elucidated the stability of vacancy cluster nucleus in quenched metals, and the deformation induced vacancies were detected by the aid of quenched-in vacancies. High-voltage electron microscopes were efficiently used as micro-laboratories, especially to do the quantitative electron microscopy to extract fundamental properties of point defects and defect interactions. Fusion neutron irradiation with a neutron source RTNS-II was a unique systematic experiment on defects produced by large collision cascades. Advantage of the use of thin foil samples for neutron irradiation was emphasized. The temperature control in fission reactor irradiation was improved to eliminate the influence of the reactor power. Temperature cycle reactor irradiation became possible, and a multi-section removable rig was constructed for systematic irradiation. The role of freely migrating point defects in microstructure evolution was detected by changing the depth of damage zone with the incidence of self-ions with glancing angles. Finally, the ultra-high-speed plastic deformation gave rise to the anomalous production of vacancies and vacancy clusters, and then to the proposal of plastic deformation of metals without dislocations.

  3. Point defect investigations in some B2 superlattices

    International Nuclear Information System (INIS)

    Dinhut, J.F.; Riviere, J.P.; Moine, P.

    1978-01-01

    Some properties of atomic defects in two B 2 type ordered alloys Fe-Al and Fe-Co have been investigated. The annealing of point defects produced by quenching, cold working, or neutron irradiation, is considered in connection with the degree of long range order. A comparison between these two systems is useful to see the influence of order on the production and recovery of point defects, since it is known that no signficant disordering occurs even by quenching in a Fe-40 at.% Al alloy, but on the other hand it is easy to achieve long range order degrees from 0 to 1 in the Fe-Co (50/50) alloy. (Auth.)

  4. Point defect relaxation in irraddiated B.C.C. metals

    International Nuclear Information System (INIS)

    Moser, P.

    1977-01-01

    Improvements in the preparation of samples has led to substantial progress in the field of point defect relaxation processes in b.c.c. irradiated metals. The recent well established experimental phenomena and current interpretations are reviewed, with a special emphasis on iron, which allows simultaneous study of anelastic and magnetic relaxations

  5. Grain boundary strength as point defect sink strength

    International Nuclear Information System (INIS)

    Volobuev, A.V.; Gann, V.V.

    1987-01-01

    Sink strength of spherical grain boundary as an absolutely absorbing surface and as finite thickness wall consisting of the edge dislocations are considered. The values of the grain boundary sink strength are shown to be critically dependent on the point defect recombination degree

  6. Loop Growth and Point-Defect Profiles during HVEM Irradiation

    DEFF Research Database (Denmark)

    Leffers, Torben; Singh, Bachu Narain

    1979-01-01

    The point-defect profile in a thin foil is included in the model for the growth of dislocation loops during HVEM irradiation suggested by Kiritani, Yoshida, Takata, and Maehara, and the possible effect of divacancies is discussed. It is found that there is a fairly wide transition range between...

  7. Weyl geometry and the nonlinear mechanics of distributed point defects

    KAUST Repository

    Yavari, A.

    2012-09-05

    The residual stress field of a nonlinear elastic solid with a spherically symmetric distribution of point defects is obtained explicitly using methods from differential geometry. The material manifold of a solid with distributed point defects-where the body is stress-free-is a flat Weyl manifold, i.e. a manifold with an affine connection that has non-metricity with vanishing traceless part, but both its torsion and curvature tensors vanish. Given a spherically symmetric point defect distribution, we construct its Weyl material manifold using the method of Cartan\\'s moving frames. Having the material manifold, the anelasticity problem is transformed to a nonlinear elasticity problem and reduces the problem of computing the residual stresses to finding an embedding into the Euclidean ambient space. In the case of incompressible neo-Hookean solids, we calculate explicitly this residual stress field. We consider the example of a finite ball and a point defect distribution uniform in a smaller ball and vanishing elsewhere. We show that the residual stress field inside the smaller ball is uniform and hydrostatic. We also prove a nonlinear analogue of Eshelby\\'s celebrated inclusion problem for a spherical inclusion in an isotropic incompressible nonlinear solid. © 2012 The Royal Society.

  8. Defect production due to quenching through a multicritical point

    International Nuclear Information System (INIS)

    Divakaran, Uma; Mukherjee, Victor; Dutta, Amit; Sen, Diptiman

    2009-01-01

    We study the generation of defects when a quantum spin system is quenched through a multicritical point by changing a parameter of the Hamiltonian as t/τ, where τ is the characteristic timescale of quenching. We argue that when a quantum system is quenched across a multicritical point, the density of defects (n) in the final state is not necessarily given by the Kibble–Zurek scaling form n∼1/τ dν/(zν+1) , where d is the spatial dimension, and ν and z are respectively the correlation length and dynamical exponent associated with the quantum critical point. We propose a generalized scaling form of the defect density given by n∼1/τ d/(2z 2 ) , where the exponent z 2 determines the behavior of the off-diagonal term of the 2 × 2 Landau–Zener matrix at the multicritical point. This scaling is valid not only at a multicritical point but also at an ordinary critical point

  9. Photoluminescence as a tool for characterizing point defects in semiconductors

    Science.gov (United States)

    Reshchikov, Michael

    2012-02-01

    Photoluminescence is one of the most powerful tools used to study optically-active point defects in semiconductors, especially in wide-bandgap materials. Gallium nitride (GaN) and zinc oxide (ZnO) have attracted considerable attention in the last two decades due to their prospects in optoelectronics applications, including blue and ultraviolet light-emitting devices. However, in spite of many years of extensive studies and a great number of publications on photoluminescence from GaN and ZnO, only a few defect-related luminescence bands are reliably identified. Among them are the Zn-related blue band in GaN, Cu-related green band and Li-related orange band in ZnO. Numerous suggestions for the identification of other luminescence bands, such as the yellow band in GaN, or green and yellow bands in ZnO, do not stand up under scrutiny. In these conditions, it is important to classify the defect-related luminescence bands and find their unique characteristics. In this presentation, we will review the origin of the major luminescence bands in GaN and ZnO. Through simulations of the temperature and excitation intensity dependences of photoluminescence and by employing phenomenological models we are able to obtain important characteristics of point defects such as carrier capture cross-sections for defects, concentrations of defects, and their charge states. These models are also used to find the absolute internal quantum efficiency of photoluminescence and obtain information about nonradiative defects. Results from photoluminescence measurements will be compared with results of the first-principle calculations, as well as with the experimental data obtained by other techniques such as positron annihilation spectroscopy, deep-level transient spectroscopy, and secondary ion mass spectrometry.

  10. Point defects in thorium nitride: A first-principles study

    Energy Technology Data Exchange (ETDEWEB)

    Pérez Daroca, D., E-mail: pdaroca@tandar.cnea.gov.ar [Gerencia de Investigación y Aplicaciones, Comisión Nacional de Energía Atómica (Argentina); Consejo Nacional de Investigaciones Científicas y Técnicas (Argentina); Llois, A.M. [Gerencia de Investigación y Aplicaciones, Comisión Nacional de Energía Atómica (Argentina); Consejo Nacional de Investigaciones Científicas y Técnicas (Argentina); Mosca, H.O. [Gerencia de Investigación y Aplicaciones, Comisión Nacional de Energía Atómica (Argentina); Instituto de Tecnología Jorge A. Sabato, UNSAM-CNEA (Argentina)

    2016-11-15

    Thorium and its compounds (carbides and nitrides) are being investigated as possible materials to be used as nuclear fuels for Generation-IV reactors. As a first step in the research of these materials under irradiation, we study the formation energies and stability of point defects in thorium nitride by means of first-principles calculations within the framework of density functional theory. We focus on vacancies, interstitials, Frenkel pairs and Schottky defects. We found that N and Th vacancies have almost the same formation energy and that the most energetically favorable defects of all studied in this work are N interstitials. These kind of results for ThN, to the best authors' knowledge, have not been obtained previously, neither experimentally, nor theoretically.

  11. Intrinsic and extrinsic defects in a family of coal-derived graphene quantum dots

    Science.gov (United States)

    Singamaneni, Srinivasa Rao; van Tol, Johan; Ye, Ruquan; Tour, James M.

    2015-11-01

    In this letter, we report on the high frequency (239.2 and 336 GHz) electron spin resonance (ESR) studies performed on graphene quantum dots (GQDs), prepared through a wet chemistry route from three types of coal: (a) bituminous, (b) anthracite, and (c) coke; and from non-coal derived GQDs. The microwave frequency-, power-, and temperature-dependent ESR spectra coupled with computer-aided simulations reveal four distinct magnetic defect centers. In bituminous- and anthracite-derived GQDs, we have identified two of them as intrinsic carbon-centered magnetic defect centers (a broad signal of peak to peak width = 697 (10-4 T), g = 2.0023; and a narrow signal of peak to peak width = 60 (10-4 T), g = 2.003). The third defect center is Mn2+ (6S5/2, 3d5) (signal width = 61 (10-4 T), g = 2.0023, Aiso = 93(10-4 T)), and the fourth defect is identified as Cu2+ (2D5/2, 3d9) (g⊥ = 2.048 and g‖ = 2.279), previously undetected. Coke-derived and non-coal derived GQDs show Mn2+ and two-carbon related signals, and no Cu2+ signal. The extrinsic impurities most likely originate from the starting coal. Furthermore, Raman, photoluminescence, and ESR measurements detected no noticeable changes in the properties of the bituminous GQDs after one year. This study highlights the importance of employing high frequency ESR spectroscopy in identifying the (magnetic) defects, which are roadblocks for spin relaxation times of graphene-based materials. These defects would not have been possible to probe by other spin transport measurements.

  12. Combining DFT, Cluster Expansions, and KMC to Model Point Defects in Alloys

    Science.gov (United States)

    Modine, N. A.; Wright, A. F.; Lee, S. R.; Foiles, S. M.; Battaile, C. C.; Thomas, J. C.; van der Ven, A.

    In an alloy, defect energies are sensitive to the occupations of nearby atomic sites, which leads to a distribution of defect properties. When radiation-induced defects diffuse from their initially non-equilibrium locations, this distribution becomes time-dependent. The defects can become trapped in energetically favorable regions of the alloy leading to a diffusion rate that slows dramatically with time. Density Functional Theory (DFT) allows the accurate determination of ground state and transition state energies for a defect in a particular alloy environment but requires thousands of processing hours for each such calculation. Kinetic Monte-Carlo (KMC) can be used to model defect diffusion and the changing distribution of defect properties but requires energy evaluations for millions of local environments. We have used the Cluster Expansion (CE) formalism to ``glue'' together these seemingly incompatible methods. The occupation of each alloy site is represented by an Ising-like variable, and products of these variables are used to expand quantities of interest. Once a CE is fit to a training set of DFT energies, it allows very rapid evaluation of the energy for an arbitrary configuration, while maintaining the accuracy of the underlying DFT calculations. These energy evaluations are then used to drive our KMC simulations. We will demonstrate the application of our DFT/MC/KMC approach to model thermal and carrier-induced diffusion of intrinsic point defects in III-V alloys. Sandia National Laboratories is a multi-program laboratory managed and operated by Sandia Corporation, a wholly owned subsidiary of Lockheed Martin Corporation, for the U.S. Department of Energy's National Nuclear Security Administration under Contract DE.

  13. Fatigue crack initiation – The role of point defects

    Czech Academy of Sciences Publication Activity Database

    Polák, Jaroslav; Man, Jiří

    2014-01-01

    Roč. 65, AUG (2014), s. 18-27 ISSN 0142-1123 R&D Projects: GA ČR(CZ) GAP108/10/2371; GA ČR(CZ) GA13-23652S Institutional support: RVO:68081723 Keywords : Fatigue crack initiation * Point defects * Persistent slip band * Intrusion * Extrusion Subject RIV: JL - Materials Fatigue, Friction Mechanics Impact factor: 2.275, year: 2014

  14. Exploring and Controlling Intrinsic Defect Formation in SnO2 Thin Films

    KAUST Repository

    Porte, Yoann

    2015-12-15

    By investigating the influence of key growth variables on the measured structural and electrical properties of SnO2 prepared by Pulsed Laser Deposition (PLD) we demonstrate fine control of intrinsic n-type defect formation. Variation of growth temperatures shows oxygen vacancies (VO) as the dominant defect which can be compensated for by thermal oxidation at temperatures > 500°C. As a consequence films with carrier concentrations in the range 1016-1019 cm-3 can be prepared by adjusting temperature alone. By altering the background oxygen pressure (PD) we observe a change in the dominant defect - from tin interstitials (Sni) at low PD (< 50 mTorr) to VO at higher oxygen pressures with similar ranges of carrier concentrations observed. Finally we demonstrate the importance of controlling the composition target surface used for PLD by exposing a target to > 100,000 laser pulses. Here carrier concentrations > 1x1020 cm-3 are observed that are attributed to high concentrations of Sni which cannot be completely compensated for by modifying the growth parameters.

  15. Intrinsic Defect Physics in Indium-based Lead-free Halide Double Perovskites.

    Science.gov (United States)

    Xu, Jian; Liu, Jian-Bo; Liu, Bai-Xin; Huang, Bing

    2017-09-21

    Lead-free halide double perovskites (HDPs) are expected to be promising photovoltaic (PV) materials beyond organic-inorganic halide perovskite, which is hindered by its structural instability and toxicity. The defect- and stability-related properties of HDPs are critical for the use of HDPs as important PV absorbers, yet their reliability is still unclear. Taking Cs 2 AgInBr 6 as a representative, we have systemically investigated the defect properties of HDPs by theoretical calculations. First, we have determined the stable chemical potential regions to grow stoichiometric Cs 2 AgInBr 6 without structural decomposition. Second, we reveal that Ag-rich and Br-poor are the ideal chemical potential conditions to grow n-type Cs 2 AgInBr 6 with shallow defect levels. Third, we find the conductivity of Cs 2 AgInBr 6 can change from good n-type, to poorer n-type, to intrinsic semiconducting depending on the growth conditions. Our studies provided important guidance for experiments to fabricate Pb-free perovskite-based solar cell devices with superior PV performances.

  16. Study on the piezoresistivity of radiation-induced point defects

    International Nuclear Information System (INIS)

    Cochard, Andre.

    1976-06-01

    This study is made of two distinct part. In a first part experimental results on the elastoresistivity of radiation-induced point defects in gold are presented. A comparison with the results on copper and molybdenum confirms the exceptional annealing behavior of gold. However, as for copper, only interstitials contribute to elastoresistivity. The results can be understood if the elastoresistivity on gold is associated to Frenkel defects. In a second part an experimental set up is described allowing the dynamic measurement of the piezoresistivity associated to radiation-induced point defects. Experiments were carried out on pure copper and Al-Cu alloys. It is shown that both, the modulus and the phase angle of the complex piezoresistivity have to be measured simultaneously. The thermoelastic effect, a phenomenon due to temperature changes in the sample under rapidly varying strain was studied as a function of strain amplitude and frequency. A simple theory of this effect yields a correct description of the experimental results [fr

  17. The role of point defects and defect complexes in silicon device processing. Summary report and papers

    Energy Technology Data Exchange (ETDEWEB)

    Sopori, B.; Tan, T.Y.

    1994-08-01

    This report is a summary of a workshop hold on August 24--26, 1992. Session 1 of the conference discussed characteristics of various commercial photovoltaic silicon substrates, the nature of impurities and defects in them, and how they are related to the material growth. Session 2 on point defects reviewed the capabilities of theoretical approaches to determine equilibrium structure of defects in the silicon lattice arising from transitional metal impurities and hydrogen. Session 3 was devoted to a discussion of the surface photovoltaic method for characterizing bulk wafer lifetimes, and to detailed studies on the effectiveness of various gettering operations on reducing the deleterious effects of transition metals. Papers presented at the conference are also included in this summary report.

  18. First-principles study of point defects in thorium carbide

    Energy Technology Data Exchange (ETDEWEB)

    Pérez Daroca, D., E-mail: pdaroca@tandar.cnea.gov.ar [Gerencia de Investigación y Aplicaciones, Comisión Nacional de Energía Atómica, Av. General Paz 1499, (1650) San Martin, Buenos Aires (Argentina); Consejo Nacional de Investigaciones Científicas y Técnicas, (1033) Buenos Aires (Argentina); Jaroszewicz, S. [Gerencia de Investigación y Aplicaciones, Comisión Nacional de Energía Atómica, Av. General Paz 1499, (1650) San Martin, Buenos Aires (Argentina); Instituto de Tecnología Jorge A. Sabato, UNSAM-CNEA, Av. General Paz 1499, (1650) San Martin, Buenos Aires (Argentina); Llois, A.M. [Gerencia de Investigación y Aplicaciones, Comisión Nacional de Energía Atómica, Av. General Paz 1499, (1650) San Martin, Buenos Aires (Argentina); Consejo Nacional de Investigaciones Científicas y Técnicas, (1033) Buenos Aires (Argentina); Mosca, H.O. [Gerencia de Investigación y Aplicaciones, Comisión Nacional de Energía Atómica, Av. General Paz 1499, (1650) San Martin, Buenos Aires (Argentina); Instituto de Tecnología Jorge A. Sabato, UNSAM-CNEA, Av. General Paz 1499, (1650) San Martin, Buenos Aires (Argentina)

    2014-11-15

    Thorium-based materials are currently being investigated in relation with their potential utilization in Generation-IV reactors as nuclear fuels. One of the most important issues to be studied is their behavior under irradiation. A first approach to this goal is the study of point defects. By means of first-principles calculations within the framework of density functional theory, we study the stability and formation energies of vacancies, interstitials and Frenkel pairs in thorium carbide. We find that C isolated vacancies are the most likely defects, while C interstitials are energetically favored as compared to Th ones. These kind of results for ThC, to the best authors’ knowledge, have not been obtained previously, neither experimentally, nor theoretically. For this reason, we compare with results on other compounds with the same NaCl-type structure.

  19. Influence of an uniaxial stress on point defects

    International Nuclear Information System (INIS)

    Beuneu, B.

    1984-03-01

    We study two effects of an elastic external uniaxial stress on point defects (created by electron irradiation): 1.- We measure the linear variation of their resistivity rhosub(D) under the elastic strain epsilon in Copper. It gives the specific elastoresistivity (E.R.S.) chisub(D)=delta rhosub(D)/epsilon. With the help of the results of VON STEBUT (fast neutrons) we show that the E.R.S. is characteristic of a defect and of its configuration. 2.- By means of resistivity measurements in molybdenum, we observe a paraelastic phenomenon. It is thermally activated (νsub(0) approximately= 10 12 s -1 and E approximately= 72 meV) and we attribute it to the reorientation of a dumbell interstitial under the uniaxial stress. The resistivity of this dumbbell is higher along its axis than perpendicularly to it. We have completed these results with some configuration energy calculations for the dumbbell and with a simple kinetic model [fr

  20. Study on the intrinsic defects in ZnO by combing first-principle and thermodynamic calculations

    Science.gov (United States)

    Ma, Changmin; Liu, Tingyu; Chang, Qiuxiang

    2015-11-01

    In this paper, the intrinsic point defects in ZnO crystal have been studied by the approach that integrates first-principles, thermodynamic calculations and the contributions of vibrational entropy. With temperature increasing and oxygen partial pressure decreasing, the formation energies of oxygen vacancy (VO), zinc interstitial (Zni) and zinc anti-site (ZnO) are decreasing, while it increases for zinc vacancy (VZn), oxygen interstitial (Oi) and oxygen anti-site (OZn). They are more sensitive to temperature than oxygen partial pressure. There are two interesting phenomena. First, VO or VZn have the lowest formation energies for whole Fermi level at special environment condition (such as at T = 300K, about PO2 = 10-10atm or T = 1500K, about PO2 = 104atm) and intrinsic p-type doping of ZnO is possible by VZn at these special conditions. Second, VO as donors have lowest formation energy for all Fermi level at high temperature and low oxygen partial pressure (T = 1500K, PO2 = 10-10atm). According to our analysis, the VO could produce n-type doping in ZnO at these special conditions and change p-type ZnO to n-type ZnO at condition from low temperature and high oxygen partial pressure to high temperature and low oxygen partial pressure.

  1. Intrinsic and extrinsic defects in a family of coal-derived graphene quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Singamaneni, Srinivasa Rao, E-mail: ssingam@ncsu.edu, E-mail: tour@rice.edu [Materials Science Division, Army Research Office, Research Triangle Park, North Carolina 27709 (United States); Department of Material Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695 (United States); Tol, Johan van [National High Magnetic Field Laboratory, Florida State University, 1800 E. Paul Dirac Drive, Tallahassee, Florida 32310 (United States); Ye, Ruquan [Department of Chemistry, Rice University, MS-222, 6100 Main Street, Houston, Texas 77005 (United States); Tour, James M., E-mail: ssingam@ncsu.edu, E-mail: tour@rice.edu [Department of Chemistry, Rice University, MS-222, 6100 Main Street, Houston, Texas 77005 (United States); Department of Materials Science and NanoEngineering, Rice University, MS-222, 6100 Main Street, Houston, Texas 77005 (United States); Smalley Institute for Nanoscale Science and Technology, Rice University, MS-222, 6100 Main Street, Houston, Texas 77005 (United States)

    2015-11-23

    In this letter, we report on the high frequency (239.2 and 336 GHz) electron spin resonance (ESR) studies performed on graphene quantum dots (GQDs), prepared through a wet chemistry route from three types of coal: (a) bituminous, (b) anthracite, and (c) coke; and from non-coal derived GQDs. The microwave frequency-, power-, and temperature-dependent ESR spectra coupled with computer-aided simulations reveal four distinct magnetic defect centers. In bituminous- and anthracite-derived GQDs, we have identified two of them as intrinsic carbon-centered magnetic defect centers (a broad signal of peak to peak width = 697 (10{sup −4} T), g = 2.0023; and a narrow signal of peak to peak width = 60 (10{sup −4} T), g = 2.003). The third defect center is Mn{sup 2+} ({sup 6}S{sub 5/2}, 3d{sup 5}) (signal width = 61 (10{sup −4} T), g = 2.0023, A{sub iso} = 93(10{sup −4} T)), and the fourth defect is identified as Cu{sup 2+} ({sup 2}D{sub 5/2}, 3d{sup 9}) (g{sub ⊥} = 2.048 and g{sub ‖} = 2.279), previously undetected. Coke-derived and non-coal derived GQDs show Mn{sup 2+} and two-carbon related signals, and no Cu{sup 2+} signal. The extrinsic impurities most likely originate from the starting coal. Furthermore, Raman, photoluminescence, and ESR measurements detected no noticeable changes in the properties of the bituminous GQDs after one year. This study highlights the importance of employing high frequency ESR spectroscopy in identifying the (magnetic) defects, which are roadblocks for spin relaxation times of graphene-based materials. These defects would not have been possible to probe by other spin transport measurements.

  2. Influence of ionic Bismuth on intrinsic defects in ZnO varistors

    Science.gov (United States)

    Huan, Chen; Gang, Fu

    2012-01-01

    The relationship between the dielectric dissipation factor D(tan δ) and frequency in the varistors of ZnO-Sb 2O 3-BaO and ZnO-Bi 2O 3-Sb 2O 3-BaO system ceramics has been investigated. A new dielectric dissipation peak was found near 1.5 MHz at room temperature in the ZnO-Sb 2O 3-BaO system, and the corresponding electron trapping level is about 0.18 eV. The dissipation peak was considered to result from the intrinsic defect Znirad rad . The additive Bi 2O 3 may play a suppressing effect on the formation of Znirad rad . This assumption was consistent with the experimental fact that degradation phenomenon of varistor ceramics under long-term load voltage is improved by the increasing amount of Bi 2O 3 additive.

  3. ODMR of single point defects in silicon nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Bagraev, Nikolay; Danilovsky, Eduard; Gets, Dmitry; Klyachkin, Leonid; Kudryavtsev, Andrey; Kuzmin, Roman; Malyarenko, Anna [Ioffe Physical-Technical Institute, Polytekhnicheskaya st. 26, 194021 St. Petersburg (Russian Federation)

    2012-05-15

    We present the findings of the optically detected magnetic resonance technique (ODMR), which reveal single point defects in the ultra-narrow silicon quantum wells (Si-QW) confined by the superconductor {delta}-barriers. This technique allows the ODMR identification without application of an external cavity, as well as a high frequency source and recorder, and with measuring the transmission spectra within the frameworks of the excitonic normal-mode coupling caused by the microcavities embedded in the Si-QW plane. (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  4. Mathematical simulation of point defect interaction with grain boundaries

    International Nuclear Information System (INIS)

    Bojko, V.S.

    1987-01-01

    Published works, where the interaction of point defects and grain boundaries was studied by mathematical simulation methods, have been analysed. Energetics of the vacancy formation both in nuclei of large-angle special grain boundaries and in lattice regions adjoining them has been considered. The data obtained permit to explain specific features of grain-boundary diffusion processes. Results of mathematical simulation of the interaction of impurity atoms and boundaries have been considered. Specific features of the helium atom interaction with large-angle grain boundaries are analysed as well

  5. Point defects in electron-irradiated oxide single crystals

    Energy Technology Data Exchange (ETDEWEB)

    Caulfield, K.J.; Cooper, R. [Univ. of Melbourne, Parkville, Victoria (Australia). Dept. of Chemistry; Boas, J.F. [Australian Radiation Lab., Yallambie, Victoria (Australia)

    1995-04-01

    Point defects have been produced in CaO, MgO, and {alpha}-Al{sub 2}O{sub 3} single crystals by electron irradiation, and thresholds for atomic displacement have been measured using time-resolved luminescence spectroscopy. Oxygen displacement energies of approximately 50 eV have been determined; however, a temperature-dependent threshold observed for an emission band in MgO may arise from a magnesium displacement. A 300-nm emission in {alpha}-Al{sub 2}O{sub 3} may be due to an F-center transition. Studies of radiative recombination kinetics are consistent with an electron-detrapping model.

  6. Point Defects in Binary Laves-Phase Alloys

    Energy Technology Data Exchange (ETDEWEB)

    Liaw, P.K.; Liu, C.T.; Pike, L.M.; Zhu, J.H.

    1998-11-30

    Point defect mechanisms in the binary C15 NbCr{sub 2} and NbCo{sub 2}, and C14 NbFe{sub 2} systems on both sides of stoichiometry was studied and clarified by both bulk density and X-ray lattice parameter measurements. It was found that the vacancy concentrations in these systems after quenching from 1000 C are essentially zero. The constitutional defects on both sides of stoichiometry for these systems were found to be of the anti-site type in comparison with the model predictions. However, thermal vacancies exhibiting a maximum at the stoichiometric composition were obtained in NbCr{sub 2} laves phase alloys after quenching from 1400 C. These could be completely eliminated by annealing at 1000 C. Anti-site hardening was found on both sides of stoichiometry for all three Laves phase systems studied. Furthermore, the thermal vacancies in NbCr{sub 2} alloys after quenching from 1400 C were found to soften the Laves phase. The anti-site hardening of the Laves phases is similar to that of the B2 compounds, while the thermal vacancy softening is unique to the Laves phase. Both the anti-site defects and thermal vacancies do not significantly affect the fracture toughness of the Laves phases.

  7. Defect Engineering in MoSe2 for the Hydrogen Evolution Reaction: From Point Defects to Edges.

    Science.gov (United States)

    Shu, Haibo; Zhou, Dong; Li, Feng; Cao, Dan; Chen, Xiaoshuang

    2017-12-13

    Superior catalytic activity and high chemical stability of inexpensive electrocatalysts for the hydrogen evolution reaction (HER) are crucial to the large-scale production of hydrogen from water. The nonprecious two-dimensional MoSe 2 materials emerge as a potential candidate, and the improvement of their catalytic activity depends on the optimization of active reaction sites at both the edges and the basal plane. Herein, the structural stability, electrocatalytic activity, and HER mechanisms on a series of MoSe 2 catalytic structures including of point defects, holes, and edges have been explored by using first-principles calculations. Our calculated results demonstrate that thermodynamically stable defects (e.g., V Se , V Se 2 , Se Mo , and V Mo 3 Se 2 ) and edges (e.g., Mo-R and Se-R) in MoSe 2 are very similar to the case of MoS 2 , but their HER activity is higher than that of the corresponding structures in MoS 2 , which is in good agreement with experimental observations. Furthermore, a Fermi-abundance model is proposed to explain the fundamental correlation between the HER activity of various MoSe 2 catalysts and their intrinsic electronic structures, and this model is also applicable for assessing the HER activity of other types of catalysts, such as MoS 2 and Pt. Moreover, two different HER mechanisms have been revealed in the MoSe 2 catalytic structures: the Volmer-Tafel mechanism is preferred for the V Se and V Se 2 structures, whereas the Volmer-Heyrovsky mechanism is more favorable for other MoSe 2 catalytic structures. The present work suggests that MoSe 2 with appropriate defects and edges is able to compete against the Pt-based catalysts and also opens a route to design highly active electrocatalysts for the HER.

  8. Correlation between intrinsic hardness and defect structures of ion irradiated Fe alloys

    International Nuclear Information System (INIS)

    Shin, C.; Jin, H. H.; Kwon, J.

    2008-01-01

    Evolution of micro structures and mechanical properties during an in-service irradiation is one of the key issues to be addressed in nuclear materials. Ion irradiation is an effective method to study these irradiation effects thanks to an ease in handling post-irradiated specimens. But the characteristics of an ion irradiation pose a certain difficulty in evaluating irradiation effects. For example, ion irradiated region extends only a few hundred nano-meters from the surface of a sample and the depth profile of an irradiation damage level is quite heterogeneous. Thus it requires special care to quantify the changes in properties after an ion irradiation. We measured changes in a hardness by using a nano-indentation combined with a continuous stiffness measurement (CSM technique. Although the SM technique allows for a continuous measurement of hardness along penetration depth of an indenter; it is difficult to obtain an intrinsic hardness of an irradiation hardened region because one is measuring hardness of a hard layer located on a soft matrix. Thus we modeled the nano-indentation test by using a finite element method. We can extract the intrinsic hardness and the yield stress of an irradiation hardened region by using a so-called inverse method. We investigated the irradiation effects on Fe-Cr binary alloy by using the methods mentioned above. TEM analysis revealed that an irradiation forms dislocation loops with Burgers vector of and 1/2 . These loops varied in size and density with the Cr content and dose level. We discuss in detail a correlation between the measured irradiation-induced changes in the surface hardness and an irradiation induced defect. (authors)

  9. Influence of phosphorus on point defects in an austenitic alloy

    International Nuclear Information System (INIS)

    Boulanger, L.

    1988-06-01

    The influence of phosphorus on points defects clusters has been studied in an austenitic alloy (Fe/19% at. Cr/13% at. Ni). Clusters are observed by transmission electron microscopy. After quenching and annealing, five types of clusters produced by vacancies or phosphorus-vacancies complexes are observed whose presence depends on cooling-speed. Vacancy concentration (with 3.6 10 -3 at. P) in clusters is about 10 -5 and apparent vacancy migration is 2 ± 0.1 eV. These observations suggest the formation of metastable small clusters during cooling which dissociate during annealing and migrate to create the observed clusters. With phosphorus, the unfrequent formation of vacancy loops has been observed during electron irradiation. Ions irradiations show that phosphorus does not favour nucleation of interstitial loops but slowers their growth. It reduces swelling by decreasing voids diameter. Phosphorus forms vacancy complexes whose role is to increase the recombination rate and to slow vacancy migration [fr

  10. Ab initio study of point defects in PbSe and PbTe: Bulk and nanowire

    Energy Technology Data Exchange (ETDEWEB)

    Wrasse, E. O. [Instituto de Física, Universidade Federal de Uberlândia, 38408-100, Uberlândia, MG, Brazil and Departamento de Física, Universidade Federal de Santa Maria, 97105-900, Santa Maria, RS (Brazil); Venezuela, P. [Instituto de Física, Universidade Federal Fluminense, 24210-346, Niteroi, RJ (Brazil); Baierle, R. J., E-mail: rbaierle@smail.ufsm.br [Departamento de Física, Universidade Federal de Santa Maria, 97105-900, Santa Maria, RS (Brazil)

    2014-11-14

    First principles investigations, within the spin-polarized density functional theory, are performed to study energetic stability and electronic properties of point defects (vacancies and antisites) in PbSe and PbTe: bulk and nanowire (NW). Our results show that the energetic stability of these defects is ruled by relaxation process. These defects have lower formation energies in the nanowire structures as compared to the bulk, being more stable in the surface of the NWs. We also show that in the bulk system only one charge state is stable, otherwise, due to the larger band gaps, more than one charge state may be stable in the NWs. In addition, we have investigated how the presence of intrinsic defects affects the electronic properties of bulk and NW systems. Vacancies give rise to new electronic states near to the edges of the valence and conduction bands while the energetic position of the electronic states from antisites depends on the charge state, being localized inside the band gap or near the edges of the valence or conduction bands. We discuss how these changes in the electronic properties due to intrinsic defects may affect the thermoelectric properties of PbSe and PbTe NWs.

  11. Band edge states, intrinsic defects, and dopants in monolayer HfS2 and SnS2

    Science.gov (United States)

    Lu, Haichang; Guo, Yuzheng; Robertson, John

    2018-02-01

    Although monolayer HfS2 and SnS2 do not have a direct bandgap like MoS2, they have much higher carrier mobilities. Their band offsets are favorable for use with WSe2 in tunnel field effect transistors. Here, we study the effective masses, intrinsic defects, and substitutional dopants of these dichalcogenides. We find that HfS2 has surprisingly small effective masses for a compound that might appear partly ionic. The S vacancy in HfS2 is found to be a shallow donor while that in SnS2 is a deep donor. Substitutional dopants at the S site are found to be shallow. This contrasts with MoS2 where donors and acceptors are not always shallow or with black phosphorus where dopants can reconstruct into deep non-doping configurations. It is pointed out that HfS2 is more favorable than MoS2 for semiconductor processing because it has the more convenient CVD precursors developed for growing HfO2.

  12. Catastrophic degradation in high power multi-mode InGaAs-AlGaAs strained quantum well lasers with intrinsic and irradiation-induced defects

    Science.gov (United States)

    Sin, Yongkun; LaLumondiere, Stephen; DeIonno, Erica; Foran, Brendan; Presser, Nathan; Lotshaw, William; Moss, Steven C.

    2014-03-01

    A number of groups have studied reliability and degradation processes in GaAs-based lasers, but none of these studies have yielded a reliability model based on the physics of failure. Unsuccessful development of this model originates from the facts that: (i) defects related phenomena responsible for degradation in GaAs-based lasers are difficult to study due to the lack of suitable non-destructive techniques and (ii) degradation process occurs extremely fast after a long period of latency. Therefore, most of laser diode manufacturers perform accelerated multi-cell lifetests to estimate lifetimes of lasers using an empirical model, but this approach is a concern especially for satellite communication systems where high reliability is required of lasers for long-term duration in the space environment. Since it is a challenge to control defects introduced during the growth of laser structures, we studied degradation processes in broad-area InGaAs-AlGaAs strained quantum well (QW) lasers with intrinsic defects as well as those with defects introduced via proton irradiation. For the present study, we investigated the root causes of catastrophic degradation processes in MOCVD-grown broad-area InGaAs-AlGaAs strained QW lasers using various failure mode analysis techniques. A number of lasers were proton irradiated with different energies and fluences. We also studied GaAs double heterostructure (DH) test samples with different amounts of intrinsic defects introduced during MOCVD growth. These samples were proton irradiated as well to introduce additional defects. Deep level transient spectroscopy (DLTS) and time resolved photoluminescence (TR-PL) techniques were employed to study traps (due to point defects) and non-radiative recombination centers (NRCs) in pre- and poststressed lasers, respectively. These characteristics were compared with those in pre- and post-proton irradiated lasers and DHs to study the role that defects and NRCs play in catastrophic degradation

  13. Hypomorphic Smn knockdown C2C12 myoblasts reveal intrinsic defects in myoblast fusion and myotube morphology

    International Nuclear Information System (INIS)

    Shafey, Dina; Cote, Patrice D.; Kothary, Rashmi

    2005-01-01

    Dosage of the survival motor neuron (SMN) protein has been directly correlated with the severity of disease in patients diagnosed with spinal muscular atrophy (SMA). It is also clear that SMA is a neurodegenerative disorder characterized by the degeneration of the α-motor neurons in the anterior horn of the spinal cord and atrophy of the associated skeletal muscle. What is more controversial is whether it is neuronal and/or muscle-cell-autonomous defects that are responsible for the disease per se. Although motor neuron degeneration is generally accepted as the primary event in SMA, intrinsic muscle defects in this disease have not been ruled out. To gain a better understanding of the influence of SMN protein dosage in muscle, we have generated a hypomorphic series of myoblast (C2C12) stable cell lines with variable Smn knockdown. We show that depletion of Smn in these cells resulted in a decrease in the number of nuclear 'gems' (gemini of coiled bodies), reduced proliferation with no increase in cell death, defects in myoblast fusion, and malformed myotubes. Importantly, the severity of these abnormalities is directly correlated with the decrease in Smn dosage. Taken together, our work supports the view that there is an intrinsic defect in skeletal muscle cells of SMA patients and that this defect contributes to the overall pathogenesis in this devastating disease

  14. Oxide-based protonic conductors: Point defects and transport properties

    DEFF Research Database (Denmark)

    Bonanos, N.

    2001-01-01

    , hydrogen pumps, fuel cells, etc. The extent to which protonic defects form depends mainly on the partial pressure of water vapour, temperature and basicity of the constituent oxides, while their mobility depends, among other factors, on the metal-oxygen bond length and bond energy. The defect equilibria...

  15. Intrinsic defect processes and elastic properties of Ti3AC2 (A = Al, Si, Ga, Ge, In, Sn) MAX phases

    Science.gov (United States)

    Christopoulos, S.-R. G.; Filippatos, P. P.; Hadi, M. A.; Kelaidis, N.; Fitzpatrick, M. E.; Chroneos, A.

    2018-01-01

    Mn+1AXn phases (M = early transition metal; A = group 13-16 element and X = C or N) have a combination of advantageous metallic and ceramic properties, and are being considered for structural applications particularly where high thermal conductivity and operating temperature are the primary drivers: for example in nuclear fuel cladding. Here, we employ density functional theory calculations to investigate the intrinsic defect processes and mechanical behaviour of a range of Ti3AC2 phases (A = Al, Si, Ga, Ge, In, Sn). Based on the intrinsic defect reaction, it is calculated that Ti3SnC2 is the more radiation-tolerant 312 MAX phase considered herein. In this material, the C Frenkel reaction is the lowest energy intrinsic defect mechanism with 5.50 eV. When considering the elastic properties of the aforementioned MAX phases, Ti3SiC2 is the hardest and Ti3SnC2 is the softest. All the MAX phases considered here are non-central force solids and brittle in nature. Ti3SiC2 is elastically more anisotropic and Ti3AlC2 is nearly isotropic.

  16. Formation Energies of Native Point Defects in Strained layer Superlattices (Postprint)

    Science.gov (United States)

    2017-06-05

    AFRL-RX-WP-JA-2017-0440 FORMATION ENERGIES OF NATIVE POINT DEFECTS IN STRAINED-LAYER SUPERLATTICES (POSTPRINT) Zhi Gang Yu...2017 Interim 11 September 2013 – 31 May 2017 4. TITLE AND SUBTITLE FORMATION ENERGIES OF NATIVE POINT DEFECTS IN STRAINED-LAYER SUPERLATTICES...Hamiltonian, tight-binding Hamiltonian, and Green’s function techniques to obtain energy levels arising from native point defects (NPDs) in InAs-GaSb and

  17. Scanning tip measurement for identification of point defects

    Directory of Open Access Journals (Sweden)

    Raineri Vito

    2011-01-01

    Full Text Available Abstract Self-assembled iron-silicide nanostructures were prepared by reactive deposition epitaxy of Fe onto silicon. Capacitance-voltage, current-voltage, and deep level transient spectroscopy (DLTS were used to measure the electrical properties of Au/silicon Schottky junctions. Spreading resistance and scanning probe capacitance microscopy (SCM were applied to measure local electrical properties. Using a preamplifier the sensitivity of DLTS was increased satisfactorily to measure transients of the scanning tip semiconductor junction. In the Fe-deposited area, Fe-related defects dominate the surface layer in about 0.5 μm depth. These defects deteriorated the Schottky junction characteristic. Outside the Fe-deposited area, Fe-related defect concentration was identified in a thin layer near the surface. The defect transients in this area were measured both in macroscopic Schottky junctions and by scanning tip DLTS and were detected by bias modulation frequency dependence in SCM.

  18. The effects of various gate oxidation conditions on intrinsic and radiation-induced extrinsic charged defects and neutral electron traps

    International Nuclear Information System (INIS)

    Walters, M.; Reisman, A.

    1990-01-01

    In this paper the influence of the oxidation temperature, ambient atmosphere, and oxidation rate on intrinsic and Al Kα x-ray radiation-induced extrinsic gate oxide defect levels in insulated-gate field effect transistors (IGFETs) is studied. Using optically assisted electron injection into n-channel polysilicon-gated IGFETs, neutral electron trap and fixed negative charge defect densities were measured, in addition to the fixed positive charge density. The results indicate that radiation-induced defect densities in the gate oxide decrease with increasing oxidation temperature in the 800 degrees C to 1000 degrees C range, and are lower for dry/wet/dry oxides than for dry oxides when the oxidation temperature is below 950 degrees C, but higher when the oxidation temperature is above 950 degrees C. The oxidation rate had no effect on defect levels in dry oxides grown at 1000 degrees CX, while at an oxidation temperature of 800 degrees C, the extrinsic defect densities were observed to increase when the oxidation rate was decreased. In all cases, the radiation-induced fixed positive charge and neutral electron trap defect densities were observed to be dependent upon the gate oxidation conditions in the same fashion

  19. Point-Defect Mediated Bonding of Pt Clusters on (5,5) Carbon Nanotubes

    DEFF Research Database (Denmark)

    Wang, J. G.; Lv, Y. A.; Li, X. N.

    2009-01-01

    The adhesion of various sizes of Pt clusters on the metallic (5,5) carbon nanotubes (CNTs) with and without the point defect has been investigated by means of density functional theory (DFT). The calculations show that the binding energies of Pt-n (n = 1-6) clusters on the defect free CNTs are more......). The stronger orbital hybridization between the Pt atom and the carbon atom shows larger charge transfers on the defective CNTs than on the defect free CNTs, which allows the strong interaction between Pt clusters and CNTs. On the basis of DFT calculations, CNTs with point defect can be used as the catalyst...

  20. Defect scaling Lee–Yang model from the perturbed DCFT point of view

    Directory of Open Access Journals (Sweden)

    Zoltán Bajnok

    2014-09-01

    Full Text Available We analyze the defect scaling Lee–Yang model from the perturbed defect conformal field theory (DCFT point of view. First the defect Lee–Yang model is solved by calculating its structure constants from the sewing relations. Integrable defect perturbations are identified in conformal defect perturbation theory. Then pure defect flows connecting integrable conformal defects are described. We develop a defect truncated conformal space approach (DTCSA to analyze the one parameter family of integrable massive perturbations in finite volume numerically. Fusing the integrable defect to an integrable boundary the relation between the IR and UV parameters can be derived from the boundary relations. We checked these results by comparing the spectrum for large volumes to the scattering theory.

  1. Point defect states in Sb-doped germanium

    International Nuclear Information System (INIS)

    Patel, Neil S.; Monmeyran, Corentin; Agarwal, Anuradha; Kimerling, Lionel C.

    2015-01-01

    Defect states in n-type Sb-doped germanium were investigated by deep-level transient spectroscopy. Cobalt-60 gamma rays were used to generate isolated vacancies and interstitials which diffuse and react with impurities in the material to form four defect states (E 37 , E 30 , E 22 , and E 21 ) in the upper half of the bandgap. Irradiations at 77 K and 300 K as well as isothermal anneals were performed to characterize the relationships between the four observable defects. E 37 is assigned to the Sb donor-vacancy associate (E-center) and is the only vacancy containing defect giving an estimate of 2 × 10 11  cm −3  Mrad −1 for the uncorrelated vacancy-interstitial pair introduction rate. The remaining three defect states are interstitial associates and transform among one another. Conversion ratios between E 22 , E 21 , and E 30 indicate that E 22 likely contains two interstitials

  2. Simulation of the diffusion features of point defects in bcc metals

    NARCIS (Netherlands)

    Chirkov, AS; Nazarov, AV; Bokstein, BS; Straumal, BB

    2006-01-01

    This work is devoted to simulation of the diffusion features of point defects in bee metals. The properties of point defects have been investigated with the usage of many-body interatomic potentials. This approach, based on the density-functional theory, permitted us to derive more adequate

  3. Point defects and diffusion in alloys: correlation effects

    International Nuclear Information System (INIS)

    Barbe, Vincent

    2006-01-01

    Kinetic models in alloys aim at predicting the transport properties of a system starting from the microscopic jump frequencies of defects. Such properties are of prior importance in systems which stay out of equilibrium for a long time, as for example irradiated alloys in nuclear reactors. We hereby propose several developments of the recent self-consistent mean field (SCMF) kinetic theory, which deals particularly with the correlation effects due to the coupling of atomic and defect fluxes. They are taken into account through a non-equilibrium distribution function of the system, which is derived from the time evolution of small clusters (of two or more atoms or defects). We therefore introduce a set of 'dynamic' interactions called effective Hamiltonian. The SCMF theory is extended to treat high jump frequency ratios for the vacancy mechanism, as well as the transport through interstitial defects. We use in both cases an atomic model which accounts for the thermodynamic properties of the alloy, as e.g. the short-range order. Those models are eventually applied to predict the diffusion properties in two model alloys of nuclear interest: the concentrated Fe-Ni-Cr solid solution and the dilute Fe(P) alloy. We present adapted atomic models and compare our predictions to experimental data. (author)

  4. Anelastic relaxation of interstitial foreign atoms and their complexes with intrinsic defects in B.C.C. metals

    International Nuclear Information System (INIS)

    Weller, M.

    1985-01-01

    In body-centred cubic metals, heavy interstitial foreign atoms (IFA) O, N and C give rise to relaxations of Snoek type. For dilute alloys, relaxation parameters are summarized. In concentrated alloys (group Va metals containing O or N) Snoek relaxations are influenced by the interaction of IFA. The recent controversy is discussed as to whether this interaction is based on clustering or anticlustering. In irradiated metals complexes of IFA with intrinsic atomic defects (vacancies or self interstitial atoms) also give rise to relaxations

  5. Effect of defects on the critical points in YBa2Cu3O7-δ

    International Nuclear Information System (INIS)

    Kwok, W. K.; Olsson, R. J.; Karapetrov, G.; Paulis, L. M.; Moulton, W. G.; Hofman, D. J.; Crabtree, G. W.

    2000-01-01

    The upper and lower critical points are investigated in untwinned YBa 2 Cu 3 O 7-δ single crystals with dilute columnar defects. Dilute columnar defects raise the upper critical point, indicating that the transition near the upper critical point is a vortex entanglement transition. The lower critical point is very sensitive to columnar defect disorder and its position can be described by a Lindemann-like criterion similar to that for melting. Dilute columnar defects induce non-linear behavior in the I-V curves of the vortex liquid state above the lower critical point, which the authors interpret as a vestige of the critical region associated with the Bose glass transition below the lower critical point

  6. Intrinsic and defect related luminescence in double oxide films of Al–Hf–O system under soft X-ray and VUV excitation

    International Nuclear Information System (INIS)

    Pustovarov, V.A.; Smirnova, T.P.; Lebedev, M.S.; Gritsenko, V.A.; Kirm, M.

    2016-01-01

    Low temperature time-resolved luminescence spectra in the region of 2.5–9.5 eV under soft X-ray excitation as well as time-resolved luminescence excitation spectra in the UV–VUV region (3.7–12 eV) of solid solutions Al x Hf y O 1−x−y thin films were investigated. The values of x and Al/Hf ratio were determined from X-ray photoelectron srectroscopy data. Hafnia films and films mixed with alumina were grown in a flow-type chemical vapor deposition reactor with argon as a carrier gas. In addition, pure alumina films were prepared by the atomic layer deposition method. A strong emission band with the peak position at 4.4 eV and with the decay time in the μs-range was revealed for pure hafnia films. The emission peak at 7.74 eV with short nanosecond decay kinetics was observed in the luminescence spectra for pure alumina films. These emission bands were ascribed to the radiative decay of self-trapped excitons (an intrinsic luminescence) in pure HfO 2 and Al 2 O 3 films, respectively. Along with intrinsic host emission, defect related luminescence bands with a larger Stokes shift were observed. In the emission spectra of the solid solution films (x=4; 17; 20 at%) the intrinsic emission bands are quenched and only the luminescence of defects (an anion vacancies) was observed. Based on transformation of the luminescence spectra and ns-luminescence decay kinetics, as well as changes in the time-resolved luminescence and luminescence excitation spectra, the relaxation processes in the films of solid solution are discussed. - Highlights: • Low temperature time−resolved PL spectra were studied in a broad range (1.5−9.5 eV). • We carried out a luminescent control of point defects (anion vacancies) and self−trapped excitons. • We observed photoluminescence of excitons bound on defects. • We observed changes of photoluminescence properties with varying ratio components.

  7. Radiation induced segregation and point defects in binary copper alloys

    International Nuclear Information System (INIS)

    Monteiro, W.A.

    1984-01-01

    Considerable progress, both theoretical and experimental, has been made in establishing and understanding the influence of factors such as temperature, time, displacement rate dependence and the effect of initial solute misfit on radiation induced solute diffusion and segregation. During irradiation, the composition of the alloy changes locally, due to defect flux driven non-equilibrium segregation near sinks such as voids, external surfaces and grain boundaries. This change in composition could influence properties and phenomena such as ductility, corrosion resistance, stress corrosion cracking, sputtering and blistering of materials used in thermo-nuclear reactors. In this work, the effect of 1 MeV electron irradiation on the initiation and development of segregation and defect diffusion in binary copper alloys has been studied in situ, with the aid of a high voltage electron microscope. The binary copper alloys had Be, Pt and Sn as alloying elements which had atomic radii less than, similar and greater than that of copper, respectively. It has been observed that in a wide irradiation temperature range, stabilization and growth of dislocation loops took place in Cu-Sn and Cu-Pt alloys. Whereas in the Cu-Be alloy, radiation induced precipitates formed and transformed to the stable γ phase. (Author) [pt

  8. Point defect and transport parameters in the CsI-TlI solid solution

    International Nuclear Information System (INIS)

    Schiraldi, A.; Pezzati, E.; Rossi, P.

    1980-01-01

    Transport and point defect parameters of the solid solution CsI-TlI have been obtained through the already reported semiempirical approach. However in this case preliminary calculations concerning pure cubic TlI have been necessary: ionic migration and point defect formation energies in this salt have been attained by working out experimental data and by applying a simplified Boswara-Lidiard approach, respectively. As well as in the analogous systems, CsBr-TlBr and CsCl-TlCl, the role of the point defect concentration seems more relevant than that of the ionic mobility in determining the trend of the conductivity vs composition. (orig.) [de

  9. Absorption and atom mobility in electric field: point defect role in glasses

    International Nuclear Information System (INIS)

    Serruys, Y.; Vigouroux, J.P.

    1986-10-01

    During the surface analysis of dielectric materials, the impinging ionising particles induce point defects localised in the band gap and build an electrical charge. The electric field created by the charged defects modifies the physico-chemical properties of surface and bulk. We show that the fundamental study of defects allows a better understanding of technological phenomena such as dielectric breakdown, fracture and diffusion [fr

  10. Manipulation of native point defect behavior in rutile TiO2 via surfaces and extended defects

    Science.gov (United States)

    Gilliard, Kandis Leslie; Seebauer, Edmund G.

    2017-11-01

    Semiconductor surfaces offer efficient pathways for exchanging native point defects with the underlying bulk. For rutile TiO2(1 1 0), isotopic self-diffusion studies of oxygen have suggested that the surface may act as a source for Oi while simultaneously acting as a sink for titanium interstitials Tii. Through self-diffusion measurements with labeled Ti as well as O, the present work develops a more complete picture of the diffusion-reaction network involving Oi and Tii, complete with the surface acting as a source for whichever elements are available from the gas phase and a sink for elements that are not. The picture points to the importance of extended defects such as platelets and crystallographic shear planes as reservoirs of Oi and Tii, acting as net sources or sinks of these species depending upon specific conditions. The results exemplify the combined roles of surfaces and extended defects in regulating point defect behavior even in macroscopic metal oxide crystals, and point to specific strategies for manipulating that behavior intentionally.

  11. Defect Detection of Velvet Bathrobe Fabrics and Grading with Demerit Point Systems

    Directory of Open Access Journals (Sweden)

    Deniz Mutlu Ala

    2015-12-01

    Full Text Available Fabric defects that may occur at different stages of woven terry fabric production requires quality control and classification of fabrics as first or second grade before sending to customer. In this study, before shipping of two different terry fabric orders, defects were detected by inspection of fabric rolls on a lighted control board by experienced experts. Number of the defects and dimensions of the defects seen during the inspection were noted on quality control charts. Detected defects were defined and scored according to different demerit point systems. In this way, the fabric rolls were classified according to the demerit point systems before being shipped to garment enterprises. Disputes can be avoided with classification made by a demerit point system on which manufacturer and the customer have agreed.

  12. Point defects and magnetic properties of neutron irradiated MgO single crystal

    Directory of Open Access Journals (Sweden)

    Mengxiong Cao

    2017-05-01

    Full Text Available (100-oriented MgO single crystals were irradiated to introduce point defects with different neutron doses ranging from 1.0×1016 to 1.0×1020 cm-2. The point defect configurations were studied with X-ray diffuse scattering and UV-Vis absorption spectra. The isointensity profiles of X-ray diffuse scattering caused by the cubic and double-force point defects in MgO were theoretically calculated based on the Huang scattering theory. The magnetic properties at different temperature were measured with superconducting quantum interference device (SQUID. The reciprocal space mappings (RSMs of irradiated MgO revealed notable diffuse scattering. The UV-Vis spectra indicated the presence of O Frenkel defects in irradiated MgO. Neutron-irradiated MgO was diamagnetic at room temperature and became ferromagnetic at low temperature due to O Frenkel defects induced by neutron-irradiation.

  13. Contribution to the study of point defects in uranium α

    International Nuclear Information System (INIS)

    Jousset, J.

    1968-01-01

    Uranium quenched from temperatures as low as 100 K shows an important increase in resistivity which disappears after annealing between 4.2 K and 41 K. This phenomenon is explained by a cold-work of the metal due to the rapid traversing of the temperature region where the lattice parameters exhibit an important and anisotropic increase. The annealing occurs in two stages (4.2 K - 26 K - 41 K). Purity of samples has an influence on the phenomenon. Model proposed is confirmed by the comparison with some experiments of annealing of defects created by irradiation of uranium at very low temperatures. Vacancies have been quenched in the metal from temperatures around 650 C (limit of the α phase). The formation energy so found is E F = 0. 5 ± 0.15 eV. The annealing out of the induced resistivity happens in two stages (300-390; 420-560 C). (authors) [fr

  14. Atomistic simulation of the point defects in TaW ordered alloy

    Indian Academy of Sciences (India)

    Combining molecular dynamics (MD) simulation with modified analytic embeddedatom method (MAEAM), the formation, migration and activation energies of the point defects for six-kind migration mechanisms in B2-type TaW alloy have been investigated. The results showed that the anti-site defects TaW and WTa were ...

  15. Atomistic simulation of the point defects in TaW ordered alloy

    Indian Academy of Sciences (India)

    atom method (MAEAM), the formation, migration and activation energies of the point defects for six-kind migration mechanisms in B2-type TaW alloy have been investigated. The results showed that the anti-site defects TaW and WTa were easier to form than Ta and W vacancies owing to their lower formation energies.

  16. Intrinsic defect processes and O migration in PrBa(Co/Fe)2O5.5

    KAUST Repository

    Salawu, Omotayo Akande

    2016-02-10

    © 2016 The Royal Society of Chemistry. New mixed ion-electron conductors are desired to lower the operating temperature of solid oxide fuel cells. The O Frenkel energy and migration of O ions in PrBa(Co/Fe)2O5.5 are studied for this purpose by density functional theory. The electronic structure and charge redistribution during defect formation are analyzed. We demonstrate that Co → Fe substitution strongly affects the formation of defects and consequently the O migration. The low O Frenkel energy points to a high concentration of O vacancies. The migration of the O ions shows a distinct anisotropy.

  17. Correlating optical damage threshold with intrinsic defect populations in fused silica as a function of heat treatment temperature

    Energy Technology Data Exchange (ETDEWEB)

    Shen, N. [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States); Matthews, M. J. [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States); Elhadj, S. [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States); Miller, P. E. [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States); Nelson, A. J. [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States); Hamilton, J. [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)

    2013-04-03

    Here, chemical vapor deposition (CVD) is used for the production of fused silica optics in high-power laser applications. However, relatively little is known about the ultraviolet laser damage threshold of CVD films and how they relate to intrinsic defects produced during deposition. We present here a study relating structural and electronic defects in CVD films to 355 nm pulsed-laser damage threshold as a function of post-deposition annealing temperature (THT). Plasma-enhanced CVD based on SiH4/N2O under oxygen-rich conditions was used to deposit 1.5, 3.1 and 6.4 µm thick films on etched SiO2 substrates. Rapid annealing was performed using a scanned CO2 laser beam up to THT ~ 2100 K. The films were then characterized using x-ray photoemission spectroscopy, Fourier transform infrared spectroscopy (FTIR) and photoluminescence spectroscopy. A gradual transition in the damage threshold of annealed films was observed for THT values up to 1600 K, correlating with a decrease in non-bridging silanol and oxygen deficient centres. An additional sharp transition in damage threshold also occurs at ~1850 K indicating substrate annealing. Based on our results, a mechanism for damage-related defect annealing is proposed, and the potential of using high-THT CVD SiO2 to mitigate optical damage is also discussed.

  18. Multi-quantum spin resonances of intrinsic defects in silicon carbide

    International Nuclear Information System (INIS)

    Georgy Astakhov

    2014-01-01

    We report the observation of multi-quantum microwave absorption and emission, induced by the optical excitation of silicon vacancy related defects in silicon carbide (SiC). In particular, we observed two-quantum transitions from +3/2 to -1/2 and from -3/2 to +1/2 spin sublevels, unambiguously indicating the spin S = 3/2 ground state. Our findings may have implications for a broad range of quantum applications. On one hand, a single silicon vacancy defect is a potential source of indistinguishable microwave photon pairs due to the two-quantum emission process. On the other hand, the two-quantum absorption can be used generate a population inversion, which is a prerequisite to fabricate solid-state maser and quantum microwave amplifier. This opens a new platform cavity quantum electrodynamics experiments and quantum information processing on a single chip. (author)

  19. The quantum nonlinear Schroedinger model with point-like defect

    International Nuclear Information System (INIS)

    Caudrelier, V; Mintchev, M; Ragoucy, E

    2004-01-01

    We establish a family of point-like impurities which preserve the quantum integrability of the nonlinear Schroedinger model in 1+1 spacetime dimensions. We briefly describe the construction of the exact second quantized solution of this model in terms of an appropriate reflection-transmission algebra. The basic physical properties of the solution, including the spacetime symmetry of the bulk scattering matrix, are also discussed. (letter to the editor)

  20. Effect of doping concentration on point defect structure in As-implanted ZnO

    Science.gov (United States)

    Wang, Huan-hua; Yuan, Mengyao

    2017-08-01

    The effect of doping concentration on the point defect structure of As-implanted ZnO single crystal was investigated using diffuse x-ray scattering and photoluminescence spectroscopy. Based on the assumption that the low-dose ion implantation did not shift the phonon dispersion of the lattice, Huang diffuse scattering signals were obtained by subtracting thermal diffuse scattering intensities. We found that the point defects aggregate into defect clusters after annealing, and their average size decreases and concentration increases with increasing the doping concentration. The underlying mechanisms of this counter-intuition result were suggested.

  1. Structure and energy of point defects in TiC: An ab initio study

    Science.gov (United States)

    Sun, Weiwei; Ehteshami, Hossein; Korzhavyi, Pavel A.

    2015-04-01

    We employ first-principles calculations to study the atomic and electronic structure of various point defects such as vacancies, interstitials, and antisites in the stoichiometric as well as slightly off-stoichiometric Ti1 -cCc (including both C-poor and C-rich compositions, 0.49 ≤c ≤0.51 ). The atomic structure analysis has revealed that both interstitial and antisite defects can exist in split conformations involving dumbbells. To characterize the electronic structure changes caused by a defect, we introduce differential density of states (dDOS) defined as a local perturbation of the density of states (DOS) on the defect site and its surrounding relative to the perfect TiC. This definition allows us to identify the DOS peaks characteristic of the studied defects in several conformations. So far, characteristic defect states have been discussed only in connection with carbon vacancies. Here, in particular, we have identified dDOS peaks of carbon interstitials and dumbbells, which can be used for experimental detection of such defects in TiC. The formation energies of point defects in TiC are derived in the framework of a grand-canonical formalism. Among the considered defects, carbon vacancies and interstitials are shown to have, respectively, the lowest and the second-lowest formation energies. Their formation energetics are consistent with the thermodynamic data on the phase stability of nonstoichiometric TiC. A cluster type of point defect is found to be next in energy, a titanium [100] dumbbell terminated by two carbon vacancies.

  2. Coupling reducing k-points for supercell models of defects in three-dimensional photonic crystals

    DEFF Research Database (Denmark)

    Lægsgaard, Jesper; Bjarklev, Anders Overgaard

    2004-01-01

    The optimum choice of k-point for supercell calculations of defect states in a three-dimensional photonic crystal is investigated for the case of a supercell with a simple cubic (SC) structure. By using the k-point (1/4,1/4,1/4) it is possible to eliminate the symmetric part of the repeated...

  3. Measured intrinsic defect density throughout the entire band gap at the Si/SiO2 interface

    Science.gov (United States)

    Sands, D.; Brunson, K. M.; Tayarani-Najaran, M. H.

    1992-08-01

    Conductance-frequency measurements down to temperatures of 100 K have been performed on both p-type and n-type silicon oxidized in dry oxygen at 900 degrees C. The metal electrode capacitors used were not given a post-metallization anneal in forming gas. This has allowed measurements of the intrinsic density of states, capture cross section, and surface potential fluctuations to within 0.06 eV of the band edges. Two peaks in the defect density at energies of 0.3 eV and 0.85 eV above the valence band are clearly visible above an asymmetric background, which rises rapidly towards the conduction band edge. The capture cross section is near constant at approximately 1016 cm2 across the gap and independent of temperature. The surface potential fluctuations reveal a peak value of approximately 70 meV centred at 0.4 eV above the valence band superimposed on a constant background of approximately 40 meV. The authors attribute the peaks in the density of states to the amphoteric trivalent silicon Pb centres. The probable causes of the asymmetric background are either the tail of a defect peak centred around the conduction band edge, or states descending from the conduction band induced by stress within the oxide.

  4. Infection Susceptibility in Gastric Intrinsic Factor (Vitamin B12-Defective Mice Is Subject to Maternal Influences

    Directory of Open Access Journals (Sweden)

    Lynda Mottram

    2016-06-01

    Full Text Available Mice harboring a mutation in the gene encoding gastric intrinsic factor (Gif, a protein essential for the absorption of vitamin B12/cobalamin (Cbl, have potential as a model to explore the role of vitamins in infection. The levels of Cbl in the blood of Giftm1a/tm1a mutant mice were influenced by the maternal genotype, with offspring born to heterozygous (high Cbl, F1 mothers exhibiting a significantly higher serum Cbl level than those born to homozygous (low Cbl, F2 equivalents. Low Cbl levels correlated with susceptibility to an infectious challenge with Salmonella enterica serovar Typhimurium or Citrobacter rodentium, and this susceptibility phenotype was moderated by Cbl administration. Transcriptional and metabolic profiling revealed that Cbl deficient mice exhibited a bioenergetic shift similar to a metabolic phenomenon commonly found in cancerous cells under hypoxic conditions known as the Warburg effect, with this metabolic effect being exacerbated further by infection. Our findings demonstrate a role for Cbl in bacterial infection, with potential general relevance to dietary deficiency and infection susceptibility.

  5. Intrinsic and extrinsic point-defects in vapor transport grown ZnO bulk crystals

    International Nuclear Information System (INIS)

    Pfisterer, D.; Hofmann, D.M.; Sann, J.; Meyer, B.K.; Tena-Zaera, R.; Munoz-Sanjose, V.; Frank, Th.; Pensl, G.

    2006-01-01

    Vapor transport grown ZnO bulk crystals were characterized by electrical, optical and magnetic resonance spectroscopy. The experiments show that the residual carrier concentration is caused by residual H, Al, Ga, and oxygen vacancies in the material. Annealing the samples in O 2 at about 1000 o C (2 atm, 20 h) reduces the H and V O donor concentration by typical one order of magnitude. The photoluminescence and DLTS results suggest a correlation between the broad unstructured emission at 2.45 eV (green band) and a donor level 530 meV below the conduction band (E4)

  6. Intrinsic and extrinsic point-defects in vapor transport grown ZnO bulk crystals

    Energy Technology Data Exchange (ETDEWEB)

    Pfisterer, D. [I. Physikalisches Institut, Justus-Liebig-Universitaet Giessen, Heinrich-Buff-Ring 16, Giessen D-35392 (Germany); Hofmann, D.M. [I. Physikalisches Institut, Justus-Liebig-Universitaet Giessen, Heinrich-Buff-Ring 16, Giessen D-35392 (Germany)]. E-mail: detlev.m.hofmann@exp1.physik.uni-giessen.de; Sann, J. [I. Physikalisches Institut, Justus-Liebig-Universitaet Giessen, Heinrich-Buff-Ring 16, Giessen D-35392 (Germany); Meyer, B.K. [I. Physikalisches Institut, Justus-Liebig-Universitaet Giessen, Heinrich-Buff-Ring 16, Giessen D-35392 (Germany); Tena-Zaera, R. [Dept. Fisica Aplicada I Electromagnetisme, Universitat de Valencia, C/Dr. Moliner 50, Burjassot 46100 (Spain); Munoz-Sanjose, V. [Dept. Fisica Aplicada I Electromagnetisme, Universitat de Valencia, C/Dr. Moliner 50, Burjassot 46100 (Spain); Frank, Th. [Institut fuer angewandte Physik, Universitaet Erlangen-Nuernberg, Staudtstr. 7/Gebaeude A3, Erlangen D-91058 (Germany); Pensl, G. [Institut fuer angewandte Physik, Universitaet Erlangen-Nuernberg, Staudtstr. 7/Gebaeude A3, Erlangen D-91058 (Germany)

    2006-04-01

    Vapor transport grown ZnO bulk crystals were characterized by electrical, optical and magnetic resonance spectroscopy. The experiments show that the residual carrier concentration is caused by residual H, Al, Ga, and oxygen vacancies in the material. Annealing the samples in O{sub 2} at about 1000 {sup o}C (2 atm, 20 h) reduces the H and V{sub O} donor concentration by typical one order of magnitude. The photoluminescence and DLTS results suggest a correlation between the broad unstructured emission at 2.45 eV (green band) and a donor level 530 meV below the conduction band (E4)

  7. Stability and kinetics of point defects in SiO2 and in SiC

    International Nuclear Information System (INIS)

    Roma, G.

    2012-01-01

    This document is conceived as an overview of Guido Roma's research achievements on defects stability and kinetics in two materials of interest in nuclear science and for many other application domains: silicon dioxide and silicon carbide. An extended summary in french is followed by the main document, in english. Chapter 1 describes the context, introduces the approach and explains the choice of silicon dioxide and silicon carbide. Chapter 2 discusses several approximations and specific issues of the application of Density Functional Theory to point defects in non-metallic materials for the study of defects energetics and diffusion. Chapter 3 is devoted to native defects in silicon dioxide and the understanding of self-diffusion in crystalline and amorphous SiO 2 . Chapter 4 summarises the results on native defects and palladium impurities in silicon carbide. A conclusion, including suggestions for future developments, closes the main part of the document. (author) [fr

  8. Ferromagnetism induced by point defect in Janus monolayer MoSSe regulated by strain engineering

    Science.gov (United States)

    Meng, Ming; Li, Tinghui; Li, Shaofeng; Liu, Kuili

    2018-03-01

    The formation and regulation of magnetism dependent on introduced defects in the Janus MoSSe monolayer has attracted much attention because of its potential application in spintronics. Here, we present a theoretical study of defect formation in the MoSSe monolayer and its introduced magnetism under external strain. The tensile deformation induced by external strain not only leads to decreases in defect formation energy, but also enhances magnetic characteristics. However, as compressed deformation increases, the magnetism in the structure induced by Se or S defects remains unchanged because this microstructural deformation adequately spin polarizes unpaired electrons of neighboring Mo atoms. Our results suggest the use of point defect and strain engineering in the Janus MoSSe monolayer for spintronics applications.

  9. A study of point defects in UO 2+x and their impact upon fuel properties

    OpenAIRE

    Ma , Yue

    2017-01-01

    Uranium dioxide is an oxygen excess, non-stoichiometric, fluorite material which exists over a wide range of compositions. At temperatures and oxygen activities that are relevant to its in-reactor behaviour, it has been reported that various types of point defects and clusters thereof may exist with different charge states and different compositions on both the anion and cation sublattices. These defects have a major influence on certain key engineering properties such as cation self -diffusi...

  10. Kinetic model for electric-field induced point defect redistribution near semiconductor surfaces

    Science.gov (United States)

    Gorai, Prashun; Seebauer, Edmund G.

    2014-07-01

    The spatial distribution of point defects near semiconductor surfaces affects the efficiency of devices. Near-surface band bending generates electric fields that influence the spatial redistribution of charged mobile defects that exchange infrequently with the lattice, as recently demonstrated for pile-up of isotopic oxygen near rutile TiO2 (110). The present work derives a mathematical model to describe such redistribution and establishes its temporal dependence on defect injection rate and band bending. The model shows that band bending of only a few meV induces significant redistribution, and that the direction of the electric field governs formation of either a valley or a pile-up.

  11. Kinetic model for electric-field induced point defect redistribution near semiconductor surfaces

    International Nuclear Information System (INIS)

    Gorai, Prashun; Seebauer, Edmund G.

    2014-01-01

    The spatial distribution of point defects near semiconductor surfaces affects the efficiency of devices. Near-surface band bending generates electric fields that influence the spatial redistribution of charged mobile defects that exchange infrequently with the lattice, as recently demonstrated for pile-up of isotopic oxygen near rutile TiO 2 (110). The present work derives a mathematical model to describe such redistribution and establishes its temporal dependence on defect injection rate and band bending. The model shows that band bending of only a few meV induces significant redistribution, and that the direction of the electric field governs formation of either a valley or a pile-up.

  12. First principles calculation of point defects and mobility degradation in bulk AlSb for radiation detection application

    International Nuclear Information System (INIS)

    Lordi, V; Aberg, D; Erhart, P; Wu, K J

    2007-01-01

    The development of high resolution, room temperature semiconductor radiation detectors requires the introduction of materials with increased carrier mobility-lifetime (μτ) product, while having a band gap in the 1.4-2.2 eV range. AlSb is a promising material for this application. However, systematic improvements in the material quality are necessary to achieve an adequate μτ product. We are using a combination of simulation and experiment to develop a fundamental understanding of the factors which affect detector material quality. First principles calculations are used to study the microscopic mechanisms of mobility degradation from point defects and to calculate the intrinsic limit of mobility from phonon scattering. We use density functional theory (DFT) to calculate the formation energies of native and impurity point defects, to determine their equilibrium concentrations as a function of temperature and charge state. Perturbation theory via the Born approximation is coupled with Boltzmann transport theory to calculate the contribution toward mobility degradation of each type of point defect, using DFT-computed carrier scattering rates. A comparison is made to measured carrier concentrations and mobilities from AlSb crystals grown in our lab. We find our predictions in good quantitative agreement with experiment, allowing optimized annealing conditions to be deduced. A major result is the determination of oxygen impurity as a severe mobility killer, despite the ability of oxygen to compensation dope AlSb and reduce the net carrier concentration. In this case, increased resistivity is not a good indicator of improved material performance, due to the concomitant sharp reduction in μτ

  13. Point defects and irradiation in oxides: simulations at the atomic scale

    International Nuclear Information System (INIS)

    Crocombette, J.P.

    2005-12-01

    The studies done by Jean-Paul Crocombette between 1996 and 2005 in the Service de Recherches de Metallurgie Physique of the Direction de l'Energie Nucleaire in Saclay are presented in this Habilitation thesis. These works were part of the material science researches on the ageing, especially under irradiation, of oxides of interest for the nuclear industry. In this context simulation studies at the atomic scale were performed on two elementary components of ageing under irradiation : point defects and displacement cascades ; using two complementary simulation techniques : ab initio electronic structure calculations and empirical potential molecular dynamics. The first part deals with point defects : self defects (vacancies or interstitials) or hetero-atomic dopants. One first recalls the energetics of such defects in oxides, the specific features of defects calculations and the expected accuracy of these calculations. Then one presents the results obtained on uranium dioxide, oxygen in silver and amorphous silica. The second part tackles the modelling of disintegration recoil nuclei in various?displacement cascades created by crystalline matrices for actinide waste disposal. Cascade calculations give access to the amorphization mechanisms under irradiation of these materials. One thus predicts that the amorphization in zircon takes place directly in the tracks whereas in lanthanum zirconate, the amorphization proceeds through the accumulation of point defects. Finally the prospects of these studies are discussed. (author)

  14. Emerging Diluted Ferromagnetism in High‐T c Superconductors Driven by Point Defect Clusters

    Science.gov (United States)

    Guzman, Roger.; Mishra, Rohan; Bartolomé, Elena; Salafranca, Juan; Magén, Cesar; Varela, Maria; Coll, Mariona; Palau, Anna; Valvidares, S. Manuel; Gargiani, Pierluigi; Pellegrin, Eric; Herrero‐Martin, Javier.; Pennycook, Stephen J.; Pantelides, Sokrates T.; Puig, Teresa; Obradors, Xavier

    2016-01-01

    Defects in ceramic materials are generally seen as detrimental to their functionality and applicability. Yet, in some complex oxides, defects present an opportunity to enhance some of their properties or even lead to the discovery of exciting physics, particularly in the presence of strong correlations. A paradigmatic case is the high‐temperature superconductor YBa2Cu3O7‐δ (Y123), in which nanoscale defects play an important role as they can immobilize quantized magnetic flux vortices. Here previously unforeseen point defects buried in Y123 thin films that lead to the formation of ferromagnetic clusters embedded within the superconductor are unveiled. Aberration‐corrected scanning transmission microscopy has been used for exploring, on a single unit‐cell level, the structure and chemistry resulting from these complex point defects, along with density functional theory calculations, for providing new insights about their nature including an unexpected defect‐driven ferromagnetism, and X‐ray magnetic circular dichroism for bearing evidence of Cu magnetic moments that align ferromagnetically even below the superconducting critical temperature to form a dilute system of magnetic clusters associated with the point defects. PMID:27812469

  15. Estimates of point defect production in α-quartz using molecular dynamics simulations

    Science.gov (United States)

    Cowen, Benjamin J.; El-Genk, Mohamed S.

    2017-07-01

    Molecular dynamics (MD) simulations are performed to investigate the production of point defects in α-quartz by oxygen and silicon primary knock-on atoms (PKAs) of 0.25-2 keV. The Wigner-Seitz (WS) defect analysis is used to identify the produced vacancies, interstitials, and antisites, and the coordination defect analysis is used to identify the under and over-coordinated oxygen and silicon atoms. The defects at the end of the ballistic phase and the residual defects, after annealing, increase with increased PKA energy, and are statistically the same for the oxygen and silicon PKAs. The WS defect analysis results show that the numbers of the oxygen vacancies and interstitials (VO, Oi) at the end of the ballistic phase is the highest, followed closely by those of the silicon vacancies and interstitials (VSi, Sii). The number of the residual oxygen and silicon vacancies and interstitials are statistically the same. In addition, the under-coordinated OI and SiIII, which are the primary defects during the ballistic phase, have high annealing efficiencies (>89%). The over-coordinated defects of OIII and SiV, which are not nearly as abundant in the ballistic phase, have much lower annealing efficiencies (PKA energy.

  16. Coupling reducing k-points for supercell models of defects in three-dimensional photonic crystals

    DEFF Research Database (Denmark)

    Lægsgaard, Jesper; Bjarklev, Anders Overgaard

    2004-01-01

    The optimum choice of k-point for supercell calculations of defect states in a three-dimensional photonic crystal is investigated for the case of a supercell with a simple cubic (SC) structure. By using the k-point (1/4,1/4,1/4) it is possible to eliminate the symmetric part of the repeated......-image couplings for the first three neighbour shells in the SC lattice. This result is shown to hold also for the case of non-equivalent axes (e.g. a distorted lattice, or an asymmetric defect structure). A specific example of a donor defect in a woodpile structure demonstrates that use of this k-point can lead...

  17. Study of point defects in pure iron by means of electrical resistivity

    International Nuclear Information System (INIS)

    Minier-Cassayre, C.

    1965-04-01

    In the first part of this work, after having reviewed the production, observation and the annealing of point defects In metals, we resume the present state of research. In the second part, we explain the techniques we have employed to produce point defects at low temperatures: irradiation, quenching and cold-work; and go on to the study of their migration and annealing. The experimental results obtained for pure iron and for iron containing certain impurities are presented in the third part. In the fourth part we suggest a model which explains the different stages of annealing observed, and their properties. We then compare the energies of interaction between point defects with the values deduced from the theory of elasticity. (author) [fr

  18. Investigation of point and extended defects in electron irradiated silicon—Dependence on the particle energy

    Energy Technology Data Exchange (ETDEWEB)

    Radu, R.; Pintilie, I.; Nistor, L. C. [National Institute of Materials Physics, Atomistilor 105 bis, Magurele 077125 (Romania); Fretwurst, E.; Lindstroem, G. [Institute for Experimental Physics, University of Hamburg, D-22761 Hamburg (Germany); Makarenko, L. F. [Belarusian State University, Independence Ave. 4, 220030 Minsk (Belarus)

    2015-04-28

    This work is focusing on generation, time evolution, and impact on the electrical performance of silicon diodes impaired by radiation induced active defects. n-type silicon diodes had been irradiated with electrons ranging from 1.5 MeV to 27 MeV. It is shown that the formation of small clusters starts already after irradiation with high fluence of 1.5 MeV electrons. An increase of the introduction rates of both point defects and small clusters with increasing energy is seen, showing saturation for electron energies above ∼15 MeV. The changes in the leakage current at low irradiation fluence-values proved to be determined by the change in the configuration of the tri-vacancy (V{sub 3}). Similar to V{sub 3}, other cluster related defects are showing bistability indicating that they might be associated with larger vacancy clusters. The change of the space charge density with irradiation and with annealing time after irradiation is fully described by accounting for the radiation induced trapping centers. High resolution electron microscopy investigations correlated with the annealing experiments revealed changes in the spatial structure of the defects. Furthermore, it is shown that while the generation of point defects is well described by the classical Non Ionizing Energy Loss (NIEL), the formation of small defect clusters is better described by the “effective NIEL” using results from molecular dynamics simulations.

  19. Charged Point Defects in the Flatland: Accurate Formation Energy Calculations in Two-Dimensional Materials

    Science.gov (United States)

    Komsa, Hannu-Pekka; Berseneva, Natalia; Krasheninnikov, Arkady V.; Nieminen, Risto M.

    2014-07-01

    Impurities and defects frequently govern materials properties, with the most prominent example being the doping of bulk semiconductors where a minute amount of foreign atoms can be responsible for the operation of the electronic devices. Several computational schemes based on a supercell approach have been developed to get insights into types and equilibrium concentrations of point defects, which successfully work in bulk materials. Here, we show that many of these schemes cannot directly be applied to two-dimensional (2D) systems, as formation energies of charged point defects are dominated by large spurious electrostatic interactions between defects in inhomogeneous environments. We suggest two approaches that solve this problem and give accurate formation energies of charged defects in 2D systems in the dilute limit. Our methods, which are applicable to all kinds of charged defects in any 2D system, are benchmarked for impurities in technologically important h-BN and MoS2 2D materials, and they are found to perform equally well for substitutional and adatom impurities.

  20. Charged Point Defects in the Flatland: Accurate Formation Energy Calculations in Two-Dimensional Materials

    Directory of Open Access Journals (Sweden)

    Hannu-Pekka Komsa

    2014-09-01

    Full Text Available Impurities and defects frequently govern materials properties, with the most prominent example being the doping of bulk semiconductors where a minute amount of foreign atoms can be responsible for the operation of the electronic devices. Several computational schemes based on a supercell approach have been developed to get insights into types and equilibrium concentrations of point defects, which successfully work in bulk materials. Here, we show that many of these schemes cannot directly be applied to two-dimensional (2D systems, as formation energies of charged point defects are dominated by large spurious electrostatic interactions between defects in inhomogeneous environments. We suggest two approaches that solve this problem and give accurate formation energies of charged defects in 2D systems in the dilute limit. Our methods, which are applicable to all kinds of charged defects in any 2D system, are benchmarked for impurities in technologically important h-BN and MoS_{2} 2D materials, and they are found to perform equally well for substitutional and adatom impurities.

  1. Ab initio phonon point defect scattering and thermal transport in graphene

    Science.gov (United States)

    Polanco, Carlos A.; Lindsay, Lucas

    2018-01-01

    We study the scattering of phonons from point defects and their effect on lattice thermal conductivity κ using a parameter-free ab initio Green's function methodology. Specifically, we focus on the scattering of phonons by boron (B), nitrogen (N), and phosphorus substitutions as well as single- and double-carbon vacancies in graphene. We show that changes of the atomic structure and harmonic interatomic force constants locally near defects govern the strength and frequency trends of the scattering of out-of-plane acoustic (ZA) phonons, the dominant heat carriers in graphene. ZA scattering rates due to N substitutions are nearly an order of magnitude smaller than those for B defects despite having similar mass perturbations. Furthermore, ZA phonon scattering rates from N defects decrease with increasing frequency in the lower-frequency spectrum in stark contrast to expected trends from simple models. ZA phonon-vacancy scattering rates are found to have a significantly softer frequency dependence (˜ω0 ) in graphene than typically employed in phenomenological models. The rigorous Green's function calculations demonstrate that typical mass-defect models do not adequately describe ZA phonon-defect scattering rates. Our ab initio calculations capture well the trend of κ vs vacancy density from experiments, though not the magnitudes. This work elucidates important insights into phonon-defect scattering and thermal transport in graphene, and demonstrates the applicability of first-principles methods toward describing these properties in imperfect materials.

  2. Point defects and precipitation phenomena in Cu-Zn-Al alloys. A study by positrons annihilation

    International Nuclear Information System (INIS)

    Romero, R.; Salgueiro, W.; Somoza, A.; Ahlers, M.H.

    1990-01-01

    Monocrystalline phase Cu-Zn-Al samples in phase β (derived from a bcc structure) were treated with different homogenization thermal treatments, isothermal annealing, and tempering at different time intervals. In this way, point defects are fixed and gamma phase precipitation is induced. The evolution of this technique's characteristic parameters was followed with positron annihilation temporal spectroscopy at room temperature. Owing to the extreme sensitivity of positrons to defects like vacancies, it is possible to study the migration of these defects in detail. It can be seen that the presence of precipitates within the matrix phase modifies the annihilation parameters. Results are discussed as a function of the standard model for positron trapping by defects. (Author). 9 refs., 4 figs

  3. Molecular aspects of core-shell intrinsic defect induced enhanced antibacterial activity of ZnO nanocrystals.

    Science.gov (United States)

    Verma, Suresh K; Jha, Ealisha; Panda, Pritam Kumar; Das, Jugal K; Thirumurugan, Arun; Suar, Mrutyunjay; Parashar, Sks

    2018-01-01

    To investigate molecular aspects of the antibacterial effect of size-dependent core-shell intrinsic defects of nanocrystalline ZnO synthesized through high energy ball milling technique. Mechanically synthesized and characterized 7, 10 and 15 h milled ZnO nanoparticles were evaluated for antibacterial activity with molecular investigation by computational molecular docking. Synthesized ZnO nanoparticles displayed shrinkage of core and increase of shell with reduction in size of bulk ZnO particles from 250 to 80, 40 and 20 nm and increase in zeta potential up to -19 mV in 7, 10 and 15 h nano ZnO. Antibacterial activity was found increased with decrease in size due to increased reactive oxygen species and membrane damage in bacteria. Synthesized nano ZnO exhibit size-dependent antibacterial action as consequences of interactions with cell membrane proteins via hydrogen bond interaction with amino acid residues followed by internalization, membrane depolarization and induction of reactive oxygen species generation.

  4. Influence of point defects' concentration on the ZnO matrix – a ...

    African Journals Online (AJOL)

    Numerical simulations of the effect of the presence of point defects in the matrix of ZnO were carried out using MATLAB computation procedure. The variation of impurity atom concentration with the energy gap was simulated. The plot obtained exhibited an exponential increase in energy gap with respect to the concentration ...

  5. Point Defects in 2D and 3D Nanomaterials: A Density Functional Theory Exploration

    NARCIS (Netherlands)

    Li, W.F.

    2017-01-01

    In this thesis, a large number of point defects was studied in both 2D and 3D nanomaterials that are of utmost importance to nanoscience by means of first principles density functional theory calculations. First, we focused on the lead chalcogenide family: PbS, PbSe, and PbTe that are frequently

  6. Theoretical calculations of the electronic and vibrational structure of point defects in ionic crystals

    International Nuclear Information System (INIS)

    Wood, R.F.; Wilson, T.M.

    1981-01-01

    The structure of the Hartree-Fock one-electron equations for simple point defects in ionic crystals are discussed. The importance of polarization effects due to the diffuse nature of the wavefunctions in the relaxed excited states are emphasized, and the usefulness of an effective mass approximation indicated. Several approaches to the calculation of the electronic structure are discussed and evaluated. The connection between electronic structure calculations and phonon perturbations are pointed out through a brief discussion of localized perturbation theory

  7. Point Defects in Two-Dimensional Layered Semiconductors: Physics and Its Applications

    Science.gov (United States)

    Suh, Joonki

    Recent advances in material science and semiconductor processing have been achieved largely based on in-depth understanding, efficient management and advanced application of point defects in host semiconductors, thus finding the relevant techniques such as doping and defect engineering as a traditional scientific and technological solution. Meanwhile, two- dimensional (2D) layered semiconductors currently draw tremendous attentions due to industrial needs and their rich physics at the nanoscale; as we approach the end of critical device dimensions in silicon-based technology, ultra-thin semiconductors have the potential as next- generation channel materials, and new physics also emerges at such reduced dimensions where confinement of electrons, phonons, and other quasi-particles is significant. It is therefore rewarding and interesting to understand and redefine the impact of lattice defects by investigating their interactions with energy/charge carriers of the host matter. Potentially, the established understanding will provide unprecedented opportunities for realizing new functionalities and enhancing the performance of energy harvesting and optoelectronic devices. In this thesis, multiple novel 2D layered semiconductors, such as bismuth and transition- metal chalcogenides, are explored. Following an introduction of conventional effects induced by point defects in semiconductors, the related physics of electronically active amphoteric defects is revisited in greater details. This can elucidate the complication of a two-dimensional electron gas coexisting with the topological states on the surface of bismuth chalcogenides, recently suggested as topological insulators. Therefore, native point defects are still one of the keys to understand and exploit topological insulators. In addition to from a fundamental science point of view, the effects of point defects on the integrated thermal-electrical transport, as well as the entropy-transporting process in

  8. Point defects and composition in hexagonal group-III nitride monolayers: A first-principles calculation

    Science.gov (United States)

    Gao, Han; Ye, Han; Yu, Zhongyuan; Zhang, Yunzhen; Liu, Yumin; Li, Yinfeng

    2017-12-01

    In this paper, we systematically investigate the structural, electronic and magnetic properties of hexagonal group-III nitride monolayers with point defects and alloying on the basis of first-principles calculations. Six typical point defects including three vacancies and three antisites are modeled in pure AlN, GaN and InN monolayers. The defect-induced modifications of band gaps and magnetic properties are demonstrated. The vacancy of nitrogen, with lowest formation energy, metalizes the semiconducting nitride monolayers. The defects losing single group-III atom introduce net magnetic moment to the systems, while others maintain non-magnetic. For ordered alloy monolayers, the AlGaN and InGaN systems are taken into consideration. The compositional variation is achieved by atomic substitution in supercells with different sizes. We find that the lattice constant and cohesive energy follow good linear relation with concentration while a slight bowing effect is observed for the band gap. These results provide a development in defective and alloy nitride monolayers and extend the potential applications.

  9. Systematic group-specific trends for point defects in bcc transition metals: An ab initio study

    International Nuclear Information System (INIS)

    Nguyen-Manh, D.; Dudarev, S.L.; Horsfield, A.P.

    2007-01-01

    Density functional theory calculations have been performed to study the systematic trends of point defect behaviours in bcc transition metals. We found that in all non-magnetic bcc transition metals, the most stable self-interstitial atom (SIAs) defect configuration has the symmetry. The calculated formation energy differences between the dumbbell and the lowest-energy configuration of metals in group 5B (V, Nb, Ta) are consistently larger than those of the corresponding element in group 6B (Cr, Mo, W). The predicted trends of SIA defects are fundamentally different from those in ferromagnetic α-Fe and correlate very well with the pronounced group-specific variation of thermally activated migration of SIAs under irradiation depending on the position of bcc metals in the periodic table

  10. The effect of correlated and point defects on the vortex lattice melting transition in single crystal YBa2Cu3O7-δ

    International Nuclear Information System (INIS)

    Kwok, W.K.; Fleshler, S.; Welp, U.; Downey, J.; Crabtree, G.W.; Fendrich, J. Giapintzakis, J.

    1993-08-01

    The vortex melting transition T m in several untwinned and twinned crystals measured resistively in fields up to 8 Tesla. A Lindemann criterion for vortex lattice melting is obtained in addition to a sharp hysteresis in the magnetoresistance at B m supporting a first order phase transition. The anisotropy of twin boundary pinning and its reduction of the ''kink'' in ρ(T) associated with the first order melting transition is discussed in samples with very dilute twin boundaries. We also report on direct suppression of melting transition by intrinsic pinning for H parallel ab and by electron-irradiation-induced point defects

  11. Effects of extrinsic point defects in phosphorene: B, C, N, O and F Adatoms

    OpenAIRE

    Wang, Gaoxue; Pandey, Ravindra; Karna, Shashi P.

    2015-01-01

    Phosphorene is emerging as a promising 2D semiconducting material with a direct band gap and high carrier mobility. In this paper, we examine the role of the extrinsic point defects including surface adatoms in modifying the electronic properties of phosphorene using density functional theory. The surface adatoms considered are B, C, N, O and F with a [He] core electronic configuration. Our calculations show that B and C, with electronegativity close to P, prefer to break the sp3 bonds of pho...

  12. Simulation of the accumulation kinetics for radiation point defects in a metals with impurity

    International Nuclear Information System (INIS)

    Iskakov, B.M.; Nurova, A.B.

    2001-01-01

    In the work a kinetics of vacancies (V) and interstitial atoms (IA) accumulation for cases when the V and IA are recombining with each other, absorbing by drain and capturing by impurity atoms has been simulated. The differential equations system numerical solution was carried out by the Runge-Kutta method. The dynamical equilibrium time achievement for the point radiation defects accumulation process in the metal with impurity is considered

  13. Characterization of Point Defects in Lithium Aluminate (LiAlO2) Single Crystals

    Science.gov (United States)

    2015-09-17

    insulating wide-band gap material currently under development for tritium breeding and radiation detection and dosimetry appli- cations. Point defects...110 xi List of Tables Table Page 1.1. Anion - Cation Bond Lengths...the valence band from the bottom of the conduction band is known as the band gap energy, and is normally represented by Eg. If a photon with an energy

  14. Reversal of helicoidal twist handedness near point defects of confined chiral liquid crystals.

    Science.gov (United States)

    Ackerman, Paul J; Smalyukh, Ivan I

    2016-05-01

    Handedness of the director twist in cholesteric liquid crystals is commonly assumed to be the same throughout the medium, determined solely by the chirality of constituent molecules or chiral additives, albeit distortions of the ground-state helicoidal configuration often arise due to the effects of confinement and external fields. We directly probe the twist directionality of liquid crystal director structures through experimental three-dimensional imaging and numerical minimization of the elastic free energy and show that spatially localized regions of handedness opposite to that of the chiral liquid crystal ground state can arise in the proximity of twisted-soliton-bound topological point defects. In chiral nematic liquid crystal confined to a film that has a thickness less than the cholesteric pitch and perpendicular surface boundary conditions, twisted solitonic structures embedded in a uniform unwound far-field background with chirality-matched handedness locally relieve confinement-imposed frustration and tend to be accompanied by point defects and smaller geometry-required, energetically costly regions of opposite twist handedness. We also describe a spatially localized structure, dubbed a "twistion," in which a twisted solitonic three-dimensional director configuration is accompanied by four point defects. We discuss how our findings may impinge on the stability of localized particlelike director field configurations in chiral and nonchiral liquid crystals.

  15. Theoretical study of native point defects in strained-layer superlattice systems

    Science.gov (United States)

    Krishnamurthy, S.; Yu, Zhi Gang

    2018-04-01

    We developed a theoretical approach that employs first-principles Hamiltonians, tight-binding Hamiltonians, and Green's function techniques to obtain energy levels arising from native point defects (NPDs) in InAs-GaSb and InAs-InAs1-xSbx strained layer superlattice (SLS) systems. In InAs and GaSb regions, we considered four types of NPDs—anion vacancy, cation vacancy, anion anti-site, and cation anti-site—as well as isoelectronic substitution at anion sites (Sb at the As site and As at the Sb site). Additionally, we considered three types of defects—the cation at the second anion site, the second anion at the cation site, and second anion vacancy—in the InAs1-xSbx alloy region of the SLS. For a selected few designs, we studied NPDs both in the bulk region and near the interfaces of the SLS. We have considered 12 designs of InAs-GaSb systems and two designs of InAs-InAs0.7Sb0.3 systems lattice-matched to the GaSb substrate. The calculated defect levels not only agreed well with available measurements, but also revealed the connection between mid-gap levels and specific NPDs. We further calculated defect formation energies both in compounds and in all superlattices considered above. Since the absolute value of defect formation energy depends considerably on growth conditions, we evaluated the formation energies in SLS with respect to their value in the corresponding bulk or alloy. The calculated defect formation energies, together with defect energy level results, allow us to identify a few promising SLS designs for high-performing photodetectors.

  16. The intrinsic crossing point of the magnetization vs. temperature curves in superconducting cuprates in the high-magnetic-field limit

    International Nuclear Information System (INIS)

    Mosqueira, J.; Torron, C.; Veira, J.A.; Vidal, F.

    1998-01-01

    The crossing point of the magnetization vs. temperature curves that appears below T c in highly anisotropic superconducting cuprates was measured in different compounds, with a different number, N, of superconducting CuO 2 layers per periodicity length, s, and also with different values of s. By correcting the measurements from different extrinsic inhomogeneity effects through the Meissner fraction, it is demonstrated experimentally for the first time that in the high-magnetic-field limit the intrinsic crossing point may be explained at a quantitative level in terms of the Tesanovic and coworkers approach based on thermal fluctuations of quasi-2D vortices (pancakes), with an effective periodicity length equal to s, independently of N. (orig.)

  17. Investigation of point defects diffusion in bcc uranium and U–Mo alloys

    International Nuclear Information System (INIS)

    Smirnova, D.E.; Kuksin, A.Yu.; Starikov, S.V.

    2015-01-01

    We present results of investigation of point defects formation and diffusion in pure γ-U and γ-U–Mo fuel alloys. The study was performed using molecular dynamics simulation with the different interatomic potentials. The point defects formation and migration energies were estimated for bcc γ-U and U–9 wt.%Mo alloy. The calculated diffusivities of atoms via defects are provided for pure γ-U and for the alloy components. Analysis of simulation results shows that self-interstitial atoms play a leading role in the self-diffusion processes in the materials studied. This fact can explain a remarkably high self-diffusion mobility observed experimentally for γ-U. The self-diffusion coefficients in γ-U calculated in this assumption agree with the data measured experimentally. It is shown that alloying of γ-U with Mo increase formation energy for self-interstitial atoms and decelerate their mobility. These changes lead to decrease of self-diffusion coefficients in U–Mo alloy compared to pure U

  18. Contribution to the study of point defects formed in nickel by electron bombardment

    International Nuclear Information System (INIS)

    Oddou, J.L.

    1968-12-01

    After a short account of the experimental techniques employed in our studies, the experimental results obtained on pure nickel samples are exposed. The apparition of the successive annihilation stages of point defects created by electron bombardment is established by isochronal heat treatments: the annihilation kinetics and the corresponding activation energies are determined. The effect of the incident particle doses is also studied. The experimental results are then compared with R.A. Johnson's theoretical calculations of the stability and the migration of point defects in nickel, and taking into account the results obtained by Peretto in magnetic after effect measurements. This leads us to a model in good agreement with calculations and experiment for the first stages. In a second chapter the behaviour of nickel doped by certain impurities is studied. First, the results concerning the rate of increase of resistivity (function of sample purity) is investigated. Two possible explanations of the observed phenomenon are proposed: either a deviation with respect to Mathiessen's law, or an increase of the number of defects formed in the presence of impurity atoms. Finally, a study of the resistivity recovery of the doped samples permits us to suggest an order of magnitude for the binding energy interstitial/impurity atom in the nickel matrix. (author) [fr

  19. Positron spectroscopy of point defects in the skyrmion-lattice compound MnSi

    Science.gov (United States)

    Reiner, Markus; Bauer, Andreas; Leitner, Michael; Gigl, Thomas; Anwand, Wolfgang; Butterling, Maik; Wagner, Andreas; Kudejova, Petra; Pfleiderer, Christian; Hugenschmidt, Christoph

    2016-07-01

    Outstanding crystalline perfection is a key requirement for the formation of new forms of electronic order in a vast number of widely different materials. Whereas excellent sample quality represents a standard claim in the literature, there are, quite generally, no reliable microscopic probes to establish the nature and concentration of lattice defects such as voids, dislocations and different species of point defects on the level relevant to the length and energy scales inherent to these new forms of order. Here we report an experimental study of the archetypical skyrmion-lattice compound MnSi, where we relate the characteristic types of point defects and their concentration to the magnetic properties by combining different types of positron spectroscopy with ab-initio calculations and bulk measurements. We find that Mn antisite disorder broadens the magnetic phase transitions and lowers their critical temperatures, whereas the skyrmion lattice phase forms for all samples studied underlining the robustness of this topologically non-trivial state. Taken together, this demonstrates the unprecedented sensitivity of positron spectroscopy in studies of new forms of electronic order.

  20. Influence of point defects on grain boundary mobility in bcc tungsten.

    Science.gov (United States)

    Borovikov, Valery; Tang, Xian-Zhu; Perez, Danny; Bai, Xian-Ming; Uberuaga, Blas P; Voter, Arthur F

    2013-01-23

    Atomistic computer simulations were performed to study the influence of radiation-induced damage on grain boundary (GB) sliding processes in bcc tungsten (W), the divertor material in the ITER tokamak and the leading candidate for the first wall material in future fusion reactors. In particular, we calculated the average sliding-friction force as a function of the number of point defects introduced into the GB for a number of symmetric tilt GBs. In all cases the average sliding-friction force at fixed shear strain rate depends on the number of point defects introduced into the GB, and in many cases introduction of these defects reduces the average sliding-friction force by roughly an order of magnitude. We have also observed that as the number of interstitials in the GB is varied, the direction of the coupled GB motion sometimes reverses, causing the GB to migrate in the opposite direction under the same applied shear stress. This could be important in the microstructural evolution of polycrystalline W under the harsh radiation environment in a fusion reactor, in which high internal stresses are present and frequent collision cascades generate interstitials and vacancies.

  1. Anisotropy of electrical conductivity in dc due to intrinsic defect formation in α-Al{sub 2}O{sub 3} single crystal implanted with Mg ions

    Energy Technology Data Exchange (ETDEWEB)

    Tardío, M., E-mail: mtardio@fis.uc3m.es [Departamento de Física, Escuela Politécnica Superior, Universidad Carlos III, Avda. de la Universidad, 30, 28911 Leganés (Madrid) (Spain); Egaña, A.; Ramírez, R.; Muñoz-Santiuste, J.E. [Departamento de Física, Escuela Politécnica Superior, Universidad Carlos III, Avda. de la Universidad, 30, 28911 Leganés (Madrid) (Spain); Alves, E. [Instituto de Plasmas e Fusão Nuclear, Instituto Superior Técnico, Universidade de Lisboa, 2695-066 Bobadela (Portugal)

    2016-07-15

    The electrical conductivity in α-Al{sub 2}O{sub 3} single crystals implanted with Mg ions in two different crystalline orientations, parallel and perpendicular to c axis, was investigated. The samples were implanted at room temperature with energies of 50 and 100 keV and fluences of 1 × 10{sup 15}, 5 × 10{sup 15} and 5 × 10{sup 16} ions/cm{sup 2}. Optical characterization reveals slight differences in the absorption bands at 6.0 and 4.2 eV, attributed to F type centers and Mie scattering from Mg precipitates, respectively. DC electrical measurements using the four and two-point probe methods, between 295 and 490 K, were used to characterize the electrical conductivity of the implanted area (Meshakim and Tanabe, 2001). Measurements in this temperature range indicate that: (1) the electrical conductivity is thermally activated independently of crystallographic orientation, (2) resistance values in the implanted region decrease with fluence levels, and (3) the I–V characteristic of electrical contacts in samples with perpendicular c axis orientation is clearly ohmic, whereas contacts are blocking in samples with parallel c axis. When thin layers are sequentially removed from the implanted region by immersing the sample in a hot solution of nitric and fluorhydric acids the electrical resistance increases until reaching the values of non-implanted crystal (Jheeta et al., 2006). We conclude that the enhancement in conductivity observed in the implanted regions is related to the intrinsic defects created by the implantation rather than to the implanted Mg ions (da Silva et al., 2002; Tardío et al., 2001; Tardío et al., 2008).

  2. Impurity diffusion, point defect engineering, and surface/interface passivation in germanium

    KAUST Repository

    Chroneos, Alexander I.

    2012-01-26

    In recent years germanium has been emerging as a mainstream material that could have important applications in the microelectronics industry. The principle aim of this study is to review investigations of the diffusion of technologically important p- and n-type dopants as well as surface and interface passivation issues in germanium. The diffusion of impurities in germanium is interrelated to the formation of clusters whenever possible, and possibilities for point defect engineering are discussed in view of recent results. The importance of electrically active defects on the Ge surface and interfaces is addressed considering strategies to suppress them and to passivate the surfaces/interfaces, bearing in mind their importance for advanced devices. © 2012 by WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  3. Effect of structural defects on the thermal conductivity of graphene: From point to line defects to haeckelites

    Science.gov (United States)

    Fthenakis, Zacharias G.; Zhu, Zhen; Tománek, David

    2014-03-01

    We use nonequilibrium molecular-dynamics simulations to study the effect of structural defects on the thermal conductivity λ of graphene. Focusing on 5-7 and 5-8 defects in the graphene honeycomb lattice, we find that λ depends sensitively on whether the defects are isolated, form lines, or form extended arrangements in haeckelites. Our results indicate that the presence of defects makes λ anisotropic and, depending on the temperature, quenches its value by one to two orders of magnitude with respect to graphene, mainly by reducing the phonon mean free path.

  4. Numerical simulation of a metal corrosion for a point defect for a organic protection layer

    International Nuclear Information System (INIS)

    Vautrin-Ul, Ch.; Chausse, A.; Stafiej, J.; Badiali, J.P.

    2005-01-01

    The safety of radioactive wastes disposal requires a big knowledge on their aging facing a corrosive environment. The corrosion is a complex phenomenon which implies many processes bound to the physic and the chemistry of the system. This approach proposes, from a little number of simple processes, numerical simulation which will define theses complex phenomenon. The presented model is a 2 dimension model at a mesoscopic scale and based on cellular automates. It allows the simulation of a metal evolution, protected by a polymer layer and in contact at one point with a corrosive media at a defect of the layer. (A.L.B.)

  5. Effect of point defects on the thermal conductivity of UO2: molecular dynamics simulations

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Xiang-Yang [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Stanek, Christopher Richard [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Andersson, Anders David Ragnar [Los Alamos National Lab. (LANL), Los Alamos, NM (United States)

    2015-07-21

    The thermal conductivity of uranium dioxide (UO2) fuel is an important materials property that affects fuel performance since it is a key parameter determining the temperature distribution in the fuel, thus governing, e.g., dimensional changes due to thermal expansion, fission gas release rates, etc. [1] The thermal conductivity of UO2 nuclear fuel is also affected by fission gas, fission products, defects, and microstructural features such as grain boundaries. Here, molecular dynamics (MD) simulations are carried out to determine quantitatively, the effect of irradiation induced point defects on the thermal conductivity of UO2, as a function of defect concentrations, for a range of temperatures, 300 – 1500 K. The results will be used to develop enhanced continuum thermal conductivity models for MARMOT and BISON by INL. These models express the thermal conductivity as a function of microstructure state-variables, thus enabling thermal conductivity models with closer connection to the physical state of the fuel [2].

  6. First-principles study of native point defects in Bi2Se3

    Science.gov (United States)

    Xue, L.; Zhou, P.; Zhang, C. X.; He, C. Y.; Hao, G. L.; Sun, L. Z.; Zhong, J. X.

    2013-05-01

    Using first-principles method within the framework of the density functional theory, we study the influence of native point defect on the structural and electronic properties of Bi2Se3. Se vacancy in Bi2Se3 is a double donor, and Bi vacancy is a triple acceptor. Se antisite (SeBi) is always an active donor in the system because its donor level (ɛ(+1/0)) enters into the conduction band. Interestingly, Bi antisite (BiSe1) in Bi2Se3 is an amphoteric dopant, acting as a donor when μe 0.251 eV (the material is typical n-type). The formation energies under different growth environments (such as Bi-rich or Se-rich) indicate that under Se-rich condition, SeBi is the most stable native defect independent of electron chemical potential μe. Under Bi-rich condition, Se vacancy is the most stable native defect except for under the growth window as μe > 0.262 eV (the material is typical n-type) and ΔμSe < -0.459 eV (Bi-rich), under such growth window BiSe1 carrying one negative charge is the most stable one.

  7. First-principles study of native point defects in Bi2Se3

    Directory of Open Access Journals (Sweden)

    L. Xue

    2013-05-01

    Full Text Available Using first-principles method within the framework of the density functional theory, we study the influence of native point defect on the structural and electronic properties of Bi2Se3. Se vacancy in Bi2Se3 is a double donor, and Bi vacancy is a triple acceptor. Se antisite (SeBi is always an active donor in the system because its donor level (ɛ(+1/0 enters into the conduction band. Interestingly, Bi antisite (BiSe1 in Bi2Se3 is an amphoteric dopant, acting as a donor when μe 0.251 eV (the material is typical n-type. The formation energies under different growth environments (such as Bi-rich or Se-rich indicate that under Se-rich condition, SeBi is the most stable native defect independent of electron chemical potential μe. Under Bi-rich condition, Se vacancy is the most stable native defect except for under the growth window as μe > 0.262 eV (the material is typical n-type and ΔμSe < −0.459 eV (Bi-rich, under such growth window BiSe1 carrying one negative charge is the most stable one.

  8. Resonance control of a silicon micro-ring resonator modulator under high-speed operation using the intrinsic defect-mediated photocurrent.

    Science.gov (United States)

    Wang, Zhao; Paez, Dixon; El-Rahman, Ahmed I Abd; Wang, Peng; Dow, Liam; Cartledge, John C; Knights, Andrew P

    2017-10-02

    A method to stabilize the resonance wavelength of a depletion-type silicon micro-ring resonator modulator during high-speed operation is described. The method utilizes the intrinsic defect-mediated photo-absorption of a silicon waveguide and results in a modulator chip fabrication process that is free of heterogeneous integration (for example using germanium), thus significantly reducing the complexity and cost of manufacture. Residual defects, present after p-n junction formation, are found to produce an adequate photocurrent for use as a feedback signal, while an integrated heater is used to compensate for thermal drift via closed-loop control. The photocurrent is measured by a source-meter, which simultaneously provides a DC bias to the integrated heater during high-speed operation. A drop-port or an integrated extrinsic detector is not needed. This feedback control method is experimentally demonstrated via a computer-aided proportional-integral-differential loop. The resonance locking is validated for 12.5 Gb/s intensity modulation in a back-to-back bit-error-rate measurement. The stabilization method described is not limited to a specific modulator design and is compatible with speeds greatly in excess of 12.5 Gb/s, in contrast to the bandwidth limitation of other stabilization methods that rely on intrinsic photo-carrier generation through non-linear processes such as two-photon-absorption. Further, the use of intrinsic defects present after standard fabrication insures that no excess loss is associated with this stabilization method.

  9. Influence of point defects on dosimetric properties and sintering capability of aluminia α

    International Nuclear Information System (INIS)

    Papin, Eric

    1997-01-01

    This work was devoted to the study of the influence of synthesis conditions on the thermoluminescence of aluminia α for use in ionizing radiation dosimetry. Powders are synthesized by heat treatment of pure aluminia γ or doped by impregnation technique. The studied parameters are the thermal cycle, the gas atmosphere of the furnace and the nature of the dopants (Mg 2+ , Cr 3+ , Th 4+ , Fe 3+ /Fe 2+ ). The thermoluminescence (TL) is connected with the presence of point defects. This technique consists in measuring the intensity of light emitted by a previously irradiated solid. Three TL peaks were observed. A peak around - 40 deg. C allows making evident the magnesium impurities and the oxygen vacations. The evolution of the intensity of the two peaks at 190 deg. C and 360 deg. C, is studied as a function of the oxygen partial pressure of the heat treatment and of the Mg 2+ , Cr 3+ and Th 4+ dopant concentrations. These investigations have permitted identifying the defects implied in the luminescence process of these two peaks, i.e. the aluminium vacations and the Cr 3+ ions substituted to Al 3+ . Thus aluminia powders having a high sensitivity to ionizing radiations (X rays, UV and γ radiations) have been synthesized. Utilization in dosimetry of the peaks at 190 deg. C and 360 deg. C is suggested. The reactivity of non-doped powders containing different types of point defects was analyzed by dilatometry. Thus, the influence of the atmosphere of powder preparation upon the sintering behaviour was made evident. The differences between the removal velocities are correlated with the variations in the aluminium vacancy concentrations. These results suppose that the limiting stage in sintering these powders is the Al 3+ ion diffusion

  10. Estimation of the temperature dependent interaction between uncharged point defects in Si

    Energy Technology Data Exchange (ETDEWEB)

    Kamiyama, Eiji [Department of Communication Engineering, Okayama Prefectural University, 111 Kuboki, Soja-shi, Okayama-ken 719-1197 (Japan); GlobalWafers Japan Co., Ltd., 30 Soya, Hadano, Kanagawa, 257-8566 (Japan); Vanhellemont, Jan [Department of Solid State Sciences, Ghent University, Krijgslaan 281-S1, Ghent B-9000 (Belgium); Sueoka, Koji [Department of Communication Engineering, Okayama Prefectural University, 111 Kuboki, Soja-shi, Okayama-ken 719-1197 (Japan)

    2015-01-15

    A method is described to estimate the temperature dependent interaction between two uncharged point defects in Si based on DFT calculations. As an illustration, the formation of the uncharged di-vacancy V{sub 2} is discussed, based on the temperature dependent attractive field between both vacancies. For that purpose, all irreducible configurations of two uncharged vacancies are determined, each with their weight given by the number of equivalent configurations. Using a standard 216-atoms supercell, nineteen irreducible configurations of two vacancies are obtained. The binding energies of all these configurations are calculated. Each vacancy is surrounded by several attractive sites for another vacancy. The obtained temperature dependent of total volume of these attractive sites has a radius that is closely related with the capture radius for the formation of a di-vacancy that is used in continuum theory. The presented methodology can in principle also be applied to estimate the capture radius for pair formation of any type of point defects.

  11. Study of the diffusion of points defects in crystalline silicon using the kinetic ART method

    Science.gov (United States)

    Trochet, Mickael; Brommer, Peter; Beland, Laurent-Karim; Joly, Jean-Francois; Mousseau, Normand

    2013-03-01

    Because of the long-time scale involved, the activated diffusion of point defects is often studied in standard molecular dynamics at high temperatures only, making it more difficult to characterize complex diffusion mechanisms. Here, we turn to the study of point defect diffusion in crystalline silicon using kinetic ART (kART), an off-lattice kinetic Monte Carlo method with on-the-fly catalog building based on the activation-relaxation technique (ART nouveau). By generating catalogs of diffusion mechanisms and fully incorporating elastic and off-lattice effects, kART is a unique tool for characterizing this problem. More precisely, using kART with the standard Stillinger-Weber potential we consider the evolution of crystalline cells with 1 to 4 vacancies and 1 to 4 interstitials at various temperatures and to provide a detailed picture of both the atomistic diffusion mechanisms and overall kinetics in addition to identifying special configurations such as a 2-interstitial super-diffuser.

  12. Hole generation associated with intrinsic defects in SOI-based SiGe thin films formed by solid-source molecular beam epitaxy

    Science.gov (United States)

    Satoh, Motoki; Arimoto, Keisuke; Yamanaka, Junji; Sawano, Kentarou; Shiraki, Yasuhiro; Nakagawa, Kiyokazu

    2018-04-01

    The electronic properties of SiGe on insulator (SGOI) structure are under intense investigation due to its importance as an electronic material. In the previous investigations, a p-type conduction was observed in SGOI even in the absence of extrinsic chemical acceptors, which is a serious problem for device applications. In this paper, the electrical properties of intrinsic-defect-related acceptor states generated during the SGOI formation are reported. It is found that freeze-out is hard to be achieved even at temperatures below 10 K, which indicates that the Fermi level lies near the valence band at low temperatures. With an aim to annihilate these defects, thermal annealing at 1050 °C for 12 h in N2 ambient was carried out. It was found that the thermal treatment is effective in reducing the densities of the acceptor states and in improving the crystalline quality.

  13. Study on the influence of inner wall morphology and structure defect on the emission point of microchannel plate

    Science.gov (United States)

    Bo, Tiezhu; Shi, Xiaoxuan; Wang, Chen; Cai, Hua; Lian, Jiao; Cao, Zhenbo; Li, Qing; Liu, Chang; Liu, Hui

    2017-10-01

    The microchannel plate (MCP) as the most important component of image intensifiers and ultraviolet detectors, is avalanche two-dimensional electron multiplier device. The emission point as a pattern noise, which is characterized by a bright or a flickering point at a fixed position of the fluorescent screen, affects the visual quality and reliability of the MCP. Therefore, eliminating the emission point is an effective way to improve the performances of the MCP. In this paper, the inner wall morphology and structure defect of the channel were studied, the MCPs with different inner wall morphlogies were analyzed by SEM, and the emission point were tested by using the photoelectric imaging integrated tester. Using the above-mentioned research methods, a specific relationship between the inner wall morphology and the emission point was established. According to the field emission theory, the mechanism of the emission point was analyzed and discussed. The results show that the inner wall structure defects of the channel are the main reasons for the emission point. Furthermore, the study found that the matching of the thermal physical properties between core glass and clad glass is the main reason for the occurrence of structure defects. The structure defects of the inner wall can be effectively reduced by optimizing the composition of the glass material, make the two glasses have the suitable performance matching, avoid forming residual pores at the interface position, the inner wall of the channel will have a smooth, defect free microstructure, thereby effectively controlling the emission point of the MCP.

  14. First principles predictions of magneto-optical data for semiconductor point defect identification: the case of divacancy defects in 4H–SiC

    Science.gov (United States)

    Davidsson, Joel; Ivády, Viktor; Armiento, Rickard; Son, N. T.; Gali, Adam; Abrikosov, Igor A.

    2018-02-01

    Study and design of magneto-optically active single point defects in semiconductors are rapidly growing fields due to their potential in quantum bit (qubit) and single photon emitter applications. Detailed understanding of the properties of candidate defects is essential for these applications, and requires the identification of the defects microscopic configuration and electronic structure. In multi-component semiconductors point defects often exhibit several non-equivalent configurations of similar but different characteristics. The most relevant example of such point defect is the divacancy in silicon carbide, where some of the non-equivalent configurations implement room temperature qubits. Here, we identify four different configurations of the divacancy in 4H–SiC via the comparison of experimental measurements and results of first-principle calculations. In order to accomplish this challenging task, we carry out an exhaustive numerical accuracy investigation of zero-phonon line and hyperfine coupling parameter calculations. Based on these results, we discuss the possibility of systematic quantum bit search.

  15. Asymptotic One-Point Functions in Gauge-String Duality with Defects.

    Science.gov (United States)

    Buhl-Mortensen, Isak; de Leeuw, Marius; Ipsen, Asger C; Kristjansen, Charlotte; Wilhelm, Matthias

    2017-12-29

    We take the first step in extending the integrability approach to one-point functions in AdS/dCFT to higher loop orders. More precisely, we argue that the formula encoding all tree-level one-point functions of SU(2) operators in the defect version of N=4 supersymmetric Yang-Mills theory, dual to the D5-D3 probe-brane system with flux, has a natural asymptotic generalization to higher loop orders. The asymptotic formula correctly encodes the information about the one-loop correction to the one-point functions of nonprotected operators once dressed by a simple flux-dependent factor, as we demonstrate by an explicit computation involving a novel object denoted as an amputated matrix product state. Furthermore, when applied to the Berenstein-Maldacena-Nastase vacuum state, the asymptotic formula gives a result for the one-point function which in a certain double-scaling limit agrees with that obtained in the dual string theory up to wrapping order.

  16. Asymptotic One-Point Functions in Gauge-String Duality with Defects

    Science.gov (United States)

    Buhl-Mortensen, Isak; de Leeuw, Marius; Ipsen, Asger C.; Kristjansen, Charlotte; Wilhelm, Matthias

    2017-12-01

    We take the first step in extending the integrability approach to one-point functions in AdS/dCFT to higher loop orders. More precisely, we argue that the formula encoding all tree-level one-point functions of SU(2) operators in the defect version of N =4 supersymmetric Yang-Mills theory, dual to the D5-D3 probe-brane system with flux, has a natural asymptotic generalization to higher loop orders. The asymptotic formula correctly encodes the information about the one-loop correction to the one-point functions of nonprotected operators once dressed by a simple flux-dependent factor, as we demonstrate by an explicit computation involving a novel object denoted as an amputated matrix product state. Furthermore, when applied to the Berenstein-Maldacena-Nastase vacuum state, the asymptotic formula gives a result for the one-point function which in a certain double-scaling limit agrees with that obtained in the dual string theory up to wrapping order.

  17. POINT CLOUD REFINEMENT WITH A TARGET-FREE INTRINSIC CALIBRATION OF A MOBILE MULTI-BEAM LIDAR SYSTEM

    Directory of Open Access Journals (Sweden)

    H. Nouiraa

    2016-06-01

    Full Text Available LIDAR sensors are widely used in mobile mapping systems. The mobile mapping platforms allow to have fast acquisition in cities for example, which would take much longer with static mapping systems. The LIDAR sensors provide reliable and precise 3D information, which can be used in various applications: mapping of the environment; localization of objects; detection of changes. Also, with the recent developments, multi-beam LIDAR sensors have appeared, and are able to provide a high amount of data with a high level of detail. A mono-beam LIDAR sensor mounted on a mobile platform will have an extrinsic calibration to be done, so the data acquired and registered in the sensor reference frame can be represented in the body reference frame, modeling the mobile system. For a multibeam LIDAR sensor, we can separate its calibration into two distinct parts: on one hand, we have an extrinsic calibration, in common with mono-beam LIDAR sensors, which gives the transformation between the sensor cartesian reference frame and the body reference frame. On the other hand, there is an intrinsic calibration, which gives the relations between the beams of the multi-beam sensor. This calibration depends on a model given by the constructor, but the model can be non optimal, which would bring errors and noise into the acquired point clouds. In the litterature, some optimizations of the calibration parameters are proposed, but need a specific routine or environment, which can be constraining and time-consuming. In this article, we present an automatic method for improving the intrinsic calibration of a multi-beam LIDAR sensor, the Velodyne HDL-32E. The proposed approach does not need any calibration target, and only uses information from the acquired point clouds, which makes it simple and fast to use. Also, a corrected model for the Velodyne sensor is proposed. An energy function which penalizes points far from local planar surfaces is used to optimize the different

  18. The interaction of dopants and native point defects in functional complex oxides

    Science.gov (United States)

    Weston, Leigh

    Oxide semiconductors are often doped with heterovalent substitutional impurities, which modify the Fermi level and lead to the formation of charge-compensating native point defects. Using first-principles calculations, we demonstrate the interplay between doping and native defect formation in complex oxides, highlighting the potential for both positive and detrimental effects. As a first example, we study the proton-conducting complex oxide SrZrO3 (SZO). In undoped SZO, the defect chemistry is dominated by oxygen vacancies (VO) and strontium vacancies (VSr), whose concentrations are constrained by charge neutrality. Upon acceptor doping with Sc or Y at the Zr site, the concentration of VO can be increased, and the concentration of VSr can be reduced; we discuss how this promotes both proton solubility and diffusion. However, under certain growth conditions, Sc and Y will substitute at the Sr site and act as donors, with detrimental consequences for proton conductivity. The second example is the alkaline-earth stannates (ASnO3; A = Ba, Sr, Ca), which are promising transparent conducting oxides. The stannates can be doped with La donors. High levels of n-type doping can be achieved in BaSnO3; however, the achievable carrier concentrations in (Ba,Sr)SnO3 alloys are much lower. We investigate the origin of this n-type doping difficulty, finding that the formation energy of A-site cation vacancies becomes very low under n-type conditions; these vacancies act as charge-compensating acceptors, reducing the n-type conductivity. This effect is discussed in light of recent experimental results, and we provide guidelines for engineering the growth environment to achieve higher n-type doping. This work was performed in collaboration with L. Bjaalie, X. Y. Cui, A. Janotti, C. Stampfl, and C. G. Van de Walle, and supported by DOE, LEAST, and NSF.

  19. Prediction and control of pillow defect in single point incremental forming using numerical simulations

    Energy Technology Data Exchange (ETDEWEB)

    Isidore, B. B. Lemopi [Eastern Mediterranean University, Gazimagusa (Turkmenistan); Hussain, G.; Khan, Wasim A. [GIK Institute of Engineering, Swabi (Pakistan); Shamachi, S. Pourhassan [University of Minho, Guimaraes (Portugal)

    2016-05-15

    Pillows formed at the center of sheets in Single point incremental forming (SPIF) are fabrication defects which adversely affect the geometrical accuracy and formability of manufactured parts. This study is focused on using FEA as a tool to predict and control pillowing in SPIF by varying tool size and shape. 3D Finite element analysis (FEA) and experiments are carried out using annealed Aluminum 1050. From FEA, it is found out that the stress/strain state in the immediate vicinity of the forming tool in the transverse direction plays a determinant role on sheet pillowing. Furthermore, pillow height increases as compression in the sheet-plane increases. The nature of in-plane stresses in the transverse direction varies from compressive to tensile as the tool-end geometry is changed from spherical to flat. Additionally, the magnitude of corresponding in-plane stresses decreases as the tool radius increases. According to measurements from the FEA model, flat end tools and large radii both retard pillow formation. However, the influence of changing tool end shape from hemispherical to flat is observed to be more important than the effect of varying tool radius, because the deformation zone remains in tension in the transverse direction while forming with flat end tools. These findings are verified by conducting a set of experiments. A fair agreement between the FEM and empirical results show that FEM can be employed as a tool to predict and control the pillow defect in SPIF.

  20. Partitioning of water between point defects, dislocations, and grain boundaries in olivine

    Science.gov (United States)

    Tielke, J. A.; Mecklenburgh, J.; Mariani, E.; Wheeler, J.

    2017-12-01

    Estimates of the storage capacity of water in the interior of the Earth and other terrestrial planets vary significantly. One interpretation is that water in planetary interiors exists primarily as hydrogen ions, dissociated from liquid water, that are associated with point defects in the crystal structure of nominally anhydrous minerals. However, dislocations and grain boundaries may contribute significantly to the storage capacity of water in planetary interiors, but hydrogen concentrations in dislocations and grain boundaries are difficult to quantify. To measure the water storage capacity of dislocations and grain boundaries, we are analyzing results from high-temperature and high-pressure experiments where deuterium, a stable isotope of hydrogen, was incorporated into olivine, the dominate phase in the upper mantle. Compared to hydrogen, deuterium concentrations can be determined at much higher spatial resolution using secondary-ion mass spectroscopy. The concentration of deuterium in the samples will also be quantified using Fourier transform infrared spectroscopy for comparison to results for hydrogen-bearing olivine. The spatial distribution of regions with different densities of geometrically-necessary dislocations and the locations of grain boundaries will be determined using electron-backscatter diffraction (EBSD) analyses. Correlation of the concentration of deuterium with dislocation densities and grain boundaries will be used to examine the partitioning of water-derived species between the different types of defects. Ultimately, these data will be used to place more realistic bounds on the storage capacity of water in the interior of Earth and of other terrestrial planets.

  1. Computer modeling of point defects and diffusion in ordered intermetallic compounds

    Science.gov (United States)

    Mishin, Y.

    2003-03-01

    This paper gives an overview of the recent progress in the understanding of diffusion mechanisms in ordered intermetallic compounds, particularly the structural aluminides TiAl and NiAl. The long-range order of the crystal structure imposes selection rules on possible diffusion mechanisms. It favors mechanisms that either do not affect the order or destroy it only locally and temporarily but recover it once the diffusion cycle is complete. Atomistic simulation tools for studying point defects and diffusion in ordered structures are discussed and their applications are demonstrated. The compositional disorder in TiAl is accommodated by antisite defects on both sides of the stoichiometry. Diffusion in TiAl involves sublattice vacancy jumps, inter-sublattice jumps, and three-jump vacancy cycles. NiAl contains antisites on the Al sublattice in Ni-rich compositions and constitutional vacancies on the Ni sublattice in Al-rich compositions. Diffusion in NiAl is governed by several mechanisms operating concurrently, including sublattice diffusion of Ni vacancies, six-jump vacancy cycles, and other processes. Many of the vacancy jumps are collective transitions involving two atoms. The dominant diffusion mechanism depends on the temperature and the degree of off-stoichiometry. The diffusion coefficients obtained by atomistic calculations compare well with experimental data.

  2. Local Electron Interaction with Point Defects in Sphalerite Zinc Selenide: Calculation from First Principles

    Science.gov (United States)

    Malyk, O. P.; Syrotyuk, S. V.

    2018-01-01

    The present article deals with the description of electron scattering on the different types of point defects in zinc blende ZnSe on the basis of short-range principles. The electron interaction with polar and nonpolar optical phonons, piezoelectric and acoustic phonons, neutral and ionized impurities and static strain centers is considered. The electron transition probabilities and, respectively, the kinetic coefficients in zinc selenide, were calculated using the numerical eigenfunction and self-consistent potential obtained within the ab initio density functional theory. The latter were evaluated using the projector augmented waves formalism as implemented in the ABINIT software suite. We investigated ZnSe samples with defect concentration 4.7 × 1015-1.08 × 1017 cm-3 , then calculated temperature dependencies of electron mobility and Hall factors in the range of 20-400 K. It is shown that the theoretical curves obtained in the framework of short-range scattering models much better coincide with experimental data than the curves calculated on the basis of long-range scattering models.

  3. Prediction and control of pillow defect in single point incremental forming using numerical simulations

    International Nuclear Information System (INIS)

    Isidore, B. B. Lemopi; Hussain, G.; Khan, Wasim A.; Shamachi, S. Pourhassan

    2016-01-01

    Pillows formed at the center of sheets in Single point incremental forming (SPIF) are fabrication defects which adversely affect the geometrical accuracy and formability of manufactured parts. This study is focused on using FEA as a tool to predict and control pillowing in SPIF by varying tool size and shape. 3D Finite element analysis (FEA) and experiments are carried out using annealed Aluminum 1050. From FEA, it is found out that the stress/strain state in the immediate vicinity of the forming tool in the transverse direction plays a determinant role on sheet pillowing. Furthermore, pillow height increases as compression in the sheet-plane increases. The nature of in-plane stresses in the transverse direction varies from compressive to tensile as the tool-end geometry is changed from spherical to flat. Additionally, the magnitude of corresponding in-plane stresses decreases as the tool radius increases. According to measurements from the FEA model, flat end tools and large radii both retard pillow formation. However, the influence of changing tool end shape from hemispherical to flat is observed to be more important than the effect of varying tool radius, because the deformation zone remains in tension in the transverse direction while forming with flat end tools. These findings are verified by conducting a set of experiments. A fair agreement between the FEM and empirical results show that FEM can be employed as a tool to predict and control the pillow defect in SPIF.

  4. The role of point defect clusters in reactor pressure vessel embrittlement

    International Nuclear Information System (INIS)

    Stoller, R.E.

    1993-01-01

    Radiation-induced point defect clusters (PDC) are a plausible source of matrix hardening in reactor pressure vessel (RPV) steels in addition to copper-rich precipitates. These PDCs can be of either interstitial or vacancy type, and could exist in either 2 or 3-D shapes, e.g. small loops, voids, or stacking fault tetrahedra. Formation and evolution of PDCs are primarily determined by displacement damage rate and irradiation temperature. There is experimental evidence that size distributions of these clusters are also influenced by impurities such as copper. A theoretical model has been developed to investigate potential role of PDCs in RPV embrittlement. The model includes a detailed description of interstitial cluster population; vacancy clusters are treated in a more approximate fashion. The model has been used to examine a broad range of irradiation and material parameters. Results indicate that magnitude of hardening increment due to these clusters can be comparable to that attributed to copper precipitates. Both interstitial and vacancy type defects contribute to this hardening, with their relative importance determined by the specific irradiation conditions

  5. Electronic structures of β-SiC containing point defects studied by DX-Xα method

    International Nuclear Information System (INIS)

    Sawabe, Takashi; Yano, Toyohiko

    2008-01-01

    The DV-Xα method was used to calculate the bond order between atoms in cubic silicon carbide (β-SiC) with a point defect. Three types of β-SiC cluster models were used: pure cluster, vacancy cluster and interstitial cluster. The bond order was influenced by the kind to defects. The bonds between C interstitial and neighboring C atoms were composed of anti-bonding type interactions, while the bonds between Si interstitial and neighboring C and Si atoms were composed of bonding type interactions. The overlap population of each molecular orbital was examined to obtain detailed information of the chemical bonding. It appeared more difficult to recombine interstitial atoms in a cluster with a C atom vacancy than in a cluster with a Si atom vacancy, due to the stronger Si-Si bonds surrounding the C atom vacancy. The C interstitial atom had C2s and C2p anti-bonding interactions with high energy levels. The Si interstitial had minimal anti-bonding interactions. (author)

  6. Many-Body Theory of Proton-Generated Point Defects for Losses of Electron Energy and Photons in Quantum Wells

    Science.gov (United States)

    Huang, Danhong; Iurov, Andrii; Gao, Fei; Gumbs, Godfrey; Cardimona, D. A.

    2018-02-01

    The effects of point defects on the loss of either energies of ballistic electron beams or incident photons are studied by using a many-body theory in a multi-quantum-well system. This theory includes the defect-induced vertex correction to a bare polarization function of electrons within the ladder approximation, and the intralayer and interlayer screening of defect-electron interactions is also taken into account in the random-phase approximation. The numerical results of defect effects on both energy-loss and optical-absorption spectra are presented and analyzed for various defect densities, numbers of quantum wells, and wave vectors. The diffusion-reaction equation is employed for calculating distributions of point defects in a layered structure. For completeness, the production rate for Frenkel-pair defects and their initial concentration are obtained based on atomic-level molecular-dynamics simulations. By combining the defect-effect, diffusion-reaction, and molecular-dynamics models with an available space-weather-forecast model, it will be possible in the future to enable specific designing for electronic and optoelectronic quantum devices that will be operated in space with radiation-hardening protection and, therefore, effectively extend the lifetime of these satellite onboard electronic and optoelectronic devices. Specifically, this theory can lead to a better characterization of quantum-well photodetectors not only for high quantum efficiency and low dark current density but also for radiation tolerance or mitigating the effects of the radiation.

  7. Point Defects in 3D and 1D Nanomaterials: The Model Case of Titanium Dioxide

    International Nuclear Information System (INIS)

    Knauth, Philippe

    2010-01-01

    Titanium dioxide is one of the most important oxides for applications in energy and environment, such as solar cells, photocatalysis, lithium-ion batteries. In recent years, new forms of titanium dioxide with unusual structure and/or morphology have been developed, including nanocrystals, nanotubes or nanowires. We have studied in detail the point defect chemistry in nanocrystalline TiO 2 powders and ceramics. There can be a change from predominant Frenkel to Schottky disorder, depending on the experimental conditions, e.g. temperature and oxygen partial pressure. We have also studied the local environment of various dopants with similar ion radius, but different ion charge (Zn 2+ , Y 3+ , Sn 4+ , Zr 4+ , Nb 5+ ) in TiO 2 nanopowders and nanoceramics by Extended X-Ray Absorption Fine Structure (EXAFS) Spectroscopy. Interfacial segregation of acceptors was demonstrated, but donors and isovalent ions do not segregate. An electrostatic 'space charge' segregation model is applied, which explains well the observed phenomena.

  8. High-density G-centers, light-emitting point defects in silicon crystal

    Directory of Open Access Journals (Sweden)

    Koichi Murata

    2011-09-01

    Full Text Available We propose a new method of creating light-emitting point defects, or G-centers, by modifying a silicon surface with hexamethyldisilazane followed by laser annealing of the surface region. This laser annealing process has two advantages: creation of highly dense G-centers by incorporating carbon atoms into the silicon during heating; freezing in the created G-centers during rapid cooling. The method provides a surface region of up to 200 nm with highly dense carbon atoms of up to 4 × 1019 cm−3 to create G-centers, above the solubility limit of carbon atoms in silicon crystal (3 × 1017 cm−3. Photoluminescence measurement reveals that the higher-speed laser annealing produces stronger G-center luminescence. We demonstrate electrically-driven emission from the G-centers in samples made using our new method.

  9. Intrinsic and impurity defects in chromium-doped SrTiO.sub.3./sub. nanopowders: EPR and NMR study

    Czech Academy of Sciences Publication Activity Database

    Bykov, I.; Makarova, Marina; Trepakov, Vladimír; Dejneka, Alexandr; Yurchenko, L.; Jäger, Aleš; Jastrabík, Lubomír

    2013-01-01

    Roč. 250, č. 4 (2013), s. 821-824 ISSN 0370-1972 R&D Projects: GA ČR GAP108/12/1941; GA MŠk(CZ) LM2011026 Institutional support: RVO:68378271 Keywords : defects * impurity * nanopowders * radiospectroscopy Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.605, year: 2013

  10. Intrinsic defect process and O migration in PrBa(Co/Fe)2O5.5

    KAUST Repository

    Salawu, Omotayo Akande

    2017-01-08

    New mixed ion-electron conductors ar desired to lower the operating temperature of solid oxide fuel cells. The O Frenkel energy and migration of O ions in rBa(Co/Fe)2O5.5 are studied for this purpose by density functional theory. We demonstrate that Fe substitution strongly affects the formation of defects and consequently the O migration.

  11. Correlating the TL response of γ-irradiated natural quartz to aluminum and hydroxyl point defects

    International Nuclear Information System (INIS)

    Ferreira de Souza, Leonardo B.; Guzzo, Pedro L.; Khoury, Helen J.

    2010-01-01

    This paper investigates the relationship between Al- and OH-related point defects with the thermoluminescent (TL) response of natural quartz sensitized with high doses of γ radiation and heat-treatments. For this, specimens from a single crystal were progressively irradiated with doses of 60 Co from 2 to 50 kGy. After each step of sensitization, the absorption bands related to [AlO 4 ] 0 , [AlO 4 /H] 0 , [H 4 O 4 ] 0 and Li-dependent OH point defects were measured by optical absorption and infrared (IR) spectroscopy. The sensitization of the 280 o C TL peak increased up to 15 kGy and then its intensity remained constant. The absorption intensity at 470 nm increased with γ doses suggesting a progressive creation of [AlO 4 ] 0 acting as recombination centers for the sensitized peak. At the same time, the TL intensity of the 90 o C peak decreased with the accumulated dose. This effect was not related to the saturation in the number of recombination centers because both [H 4 O 4 ] 0 and [AlO 4 ] 0 bands were increasing after 50 kGy. Compared to the as-received condition, it was found that IR bands associated with [AlO 4 /H] 0 and Li-dependent OH decreased with the effect of heat-treatments. The precursor for [AlO 4 ] 0 is [AlO 4 /Li] 0 and the Li species dislodged from [AlO 4 /Li] 0 and Li-dependent OH centers play an important role in the sensitization process.

  12. Room temperature ferromagnetism and gas sensing in ZnO nanostructures: Influence of intrinsic defects and Mn, Co, Cu doping

    Energy Technology Data Exchange (ETDEWEB)

    Mhlongo, Gugu H., E-mail: gmhlongo@csir.co.za [DST/CSIR National Centre for Nanostructured Materials, Council for Scientific and Industrial Research, Pretoria 0001 (South Africa); Shingange, Katekani; Tshabalala, Zamaswazi P.; Dhonge, Baban P. [DST/CSIR National Centre for Nanostructured Materials, Council for Scientific and Industrial Research, Pretoria 0001 (South Africa); Mahmoud, Fawzy A. [Solid State Physics Dept., National Research Centre, P.O. 12622, Dokki, Giza (Egypt); Mwakikunga, Bonex W.; Motaung, David E. [DST/CSIR National Centre for Nanostructured Materials, Council for Scientific and Industrial Research, Pretoria 0001 (South Africa)

    2016-12-30

    Highlights: • Preparation of Mn, Co, Cu doped ZnO via microwave-assisted method. • Doping alters the morphology of ZnO nanostructures. • Concentration of zinc and oxygen related defects vary with doping. • Correlation between PL and EPR was established. • Both undoped and doped ZnO nanostructures showed selectivity towards NH{sub 3}. - Abstract: Undoped and transition metal (Cu, Co and Mn) doped ZnO nanostructures were successfully prepared via a microwave-assisted hydrothermal method followed by annealing at 500 °C. Numerous characterization facilities such as X-ray powder diffraction (XRD), field emission scanning electron microscopy (FESEM), and high-resolution transmission electron microscopy (HRTEM) were employed to acquire the structural and morphological information of the prepared ZnO based products. Combination of defect structure analysis based on photoluminescence (PL) and electron paramagnetic resonance (EPR) indicated that co-existing oxygen vacancies (V{sub O}) and zinc interstitials (Zn{sub i}) defects are responsible for the observed ferromagnetism in undoped and transition metal (TM) doped ZnO systems. PL analysis demonstrated that undoped ZnO has more donor defects (V{sub O} and Zn{sub i}) which are beneficial for gas response enhancement. Undoped ZnO based sensor exhibited a higher sensor response to NH{sub 3} gas compared to its counterparts owing to high content of donor defects while transition metal doped sensors showed short response and recovery times compared to undoped ZnO.

  13. Resolving Point Defects in the Hydration Structure of Calcite (10.4) with Three-Dimensional Atomic Force Microscopy

    Science.gov (United States)

    Söngen, Hagen; Reischl, Bernhard; Miyata, Kazuki; Bechstein, Ralf; Raiteri, Paolo; Rohl, Andrew L.; Gale, Julian D.; Fukuma, Takeshi; Kühnle, Angelika

    2018-03-01

    It seems natural to assume that defects at mineral surfaces critically influence interfacial processes such as the dissolution and growth of minerals in water. The experimental verification of this claim, however, is challenging and requires real-space methods with utmost spatial resolution, such as atomic force microscopy (AFM). While defects at mineral-water interfaces have been resolved in 2D AFM images before, the perturbation of the surrounding hydration structure has not yet been analyzed experimentally. In this Letter, we demonstrate that point defects on the most stable and naturally abundant calcite (10.4) surface can be resolved using high-resolution 3D AFM—even within the fifth hydration layer. Our analysis of the hydration structure surrounding the point defect shows a perturbation of the hydration with a lateral extent of approximately one unit cell. These experimental results are corroborated by molecular dynamics simulations.

  14. Native point defects in MoS2 and their influences on optical properties by first principles calculations

    Science.gov (United States)

    Saha, Ashim Kumar; Yoshiya, Masato

    2018-03-01

    Stability of native point defect species and optical properties are quantitatively examined through first principles calculations in order to identify possible native point defect species in MoS2 and its influences on electronic structures and resultant optical properties. Possible native point defect species are identified as functions of thermodynamic environment and location of Fermi-level in MoS2. It is found that sulphur vacancies can be introduced more easily than other point defect species which will create impurity levels both in bandgap and in valence band. Additionally, antisite Mo and/or Mo vacancies can be created depending on chemical potential of sulphur, both of which will create impurity levels in bandgap and in valence band. Those impurity levels result in pronounced photon absorption in visible light region, though each of these point defects alone has limited impact on the optical properties unless their concentration remained low. Thus, attention must be paid when intentional impurity doping is made to MoS2 to avoid unwanted modification of optical properties of MoS2. Those impurity may enable further exploitation of photovoltaic energy conversion at longer wavelength.

  15. Modeling of Semiconductors and Correlated Oxides with Point Defects by First Principles Methods

    KAUST Repository

    Wang, Hao

    2014-06-15

    Point defects in silicon, vanadium dioxide, and doped ceria are investigated by density functional theory. Defects involving vacancies and interstitial oxygen and carbon in silicon are after formed in outer space and significantly affect device performances. The screened hybrid functional by Heyd-Scuseria-Ernzerhof is used to calculate formation energies, binding energies, and electronic structures of the defective systems because standard density functional theory underestimates the bang gap of silicon. The results indicate for the A-center a −2 charge state. Tin is proposed to be an effective dopant to suppress the formation of A-centers. For the total energy difference between the A- and B-type carbon related G-centers we find close agreement with the experiment. The results indicate that the C-type G-center is more stable than both the A- and B-types. The electronic structures of the monoclinic and rutile phases of vanadium dioxide are also studied using the Heyd-Scuseria-Ernzerhof functional. The ground states of the pure phases obtained by calculations including spin polarization disagree with the experimental observations that the monoclinic phase should not be magnetic, the rutile phase should be metallic, and the monoclinic phase should have a lower total energy than the rutile phase. By tuning the Hartree-Fock fraction α to 10% the agreement with experiments is improved in terms of band gaps and relative energies of the phases. A calculation scheme is proposed to simulate the relationship between the transition temperature of the metal-insulator transition and the dopant concentration in tungsten doped vanadium dioxide. We achieve good agreement with the experimental situation. 18.75% and 25% yttrium, lanthanum, praseodymium, samarium, and gadolinium doped ceria supercells generated by the special quasirandom structure approach are employed to investigate the impact of doping on the O diffusion. The experimental behavior of the conductivity for the

  16. Atomic diffusion and point defects in crystals. Final report. Progress report, April 1, 1956--August 31, 1972

    International Nuclear Information System (INIS)

    Slifkin, L.M.

    1972-01-01

    Studies were made to elucidate the fundamental mechanisms of point defect transport in simple metals and in crystals of the silver halides. Experiments performed include: (a) effect of composition on diffusion in Ag-Au alloys and Ag-Cd alloys; (b) effect of a vacancy flux on diffusion; (c) diffusion of solutes in aluminum and its dilute alloys; (d) dislocation effects in Cu 3 Au; (e) role of electronic structure and ionic radius in diffusion of cations in AgCl; (f) effects of ionic radius on halide impurity ion diffusion in AgCl and AgBr; (g) production of excess point defects in AgCl by deformation and by quenching; (h) the kinetics of the pinning of dislocations by point defects in AgBr crystals. (auth)

  17. Adsorption of 2,3,7,8-tetrochlorodibenzo-p-dioxins on intrinsic, defected, and Ti (N, Ag) doped graphene: a DFT study.

    Science.gov (United States)

    Zhang, Hongping; He, Weidong; Luo, Xuegang; Lin, Xiaoyan; Lu, Xiong

    2014-05-01

    As one of the most hazardous substances in the world, dioxins have received continuous interest in chemistry, materials, and environmental sciences. The rapid detection and capture of carcinogenic 2,3,7,8-tetrochlorodibenzo-p-dioxin (TCDD) are particularly challenging in the fields of materials and environmental sciences. In this study, density functional theory (DFT) method was applied to systematically investigate the interactions between TCDD and different types of graphene samples. The results reveal that the initial configuration of TCDD affects the interactions to a certain extent. As TCDD molecule is parallel to the graphene sheets, the interactions are the largest for all three types of graphene samples (intrinsic, defected and doped). In addition, the "TCDD" capture ability of graphene can be greatly improved by Ti doping. Our study facilitates the rational design of efficient sensors for a variety of applications in environmental science and engineering.

  18. Point defects and electric compensation in gallium arsenide single crystals; Punktdefekte und elektrische Kompensation in Galliumarsenid-Einkristallen

    Energy Technology Data Exchange (ETDEWEB)

    Kretzer, Ulrich

    2007-12-10

    In the present thesis the point-defect budget of gallium arsenide single crystals with different dopings is studied. It is shown, in which way the concentration of the single point defects depende on the concentration of the dopants, the stoichiometry deviation, and the position of the Fermi level. For this serve the results of the measurement-technical characterization of a large number of samples, in the fabrication of which these parameters were directedly varied. The main topic of this thesis lies in the development of models, which allow a quantitative description of the experimentally studied electrical and optical properties of gallium arsenide single crystals starting from the point-defect concentrations. Because from point defects charge carriers can be set free, their concentration determines essentially the charge-carrier concentration in the bands. In the ionized state point defects act as scattering centers for free charge carriers and influence by this the drift mobility of the charge carriers. A thermodynamic modeling of the point-defect formation yields statements on the equilibrium concentrations of the point defects in dependence on dopant concentration and stoichiometry deviation. It is show that the electrical properties of the crystals observed at room temperature result from the kinetic suppression of processes, via which the adjustment of a thermodynamic equilibrium between the point defects is mediated. [German] In der vorliegenden Arbeit wird der Punktdefekthaushalt von Galliumarsenid-Einkristallen mit unterschiedlichen Dotierungen untersucht. Es wird gezeigt, in welcher Weise die Konzentration der einzelnen Punktdefekte von der Konzentration der Dotierstoffe, der Stoechiometrieabweichung und der Lage des Ferminiveaus abhaengen. Dazu dienen die Ergebnisse der messtechnischen Charakterisierung einer grossen Anzahl von Proben, bei deren Herstellung diese Parameter gezielt variiert wurden. Der Schwerpunkt der Arbeit liegt in der Entwicklung

  19. First-principles study of point-defect production in Si and SiC

    International Nuclear Information System (INIS)

    Windl, W.; Lenosky, T.J.; Kress, J.D.; Voter, A.F.

    1998-03-01

    The authors have calculated the displacement-threshold energy E(d) for point-defect production in Si and SiC using empirical potentials, tight-binding, and first-principles methods. They show that -- depending on the knock-on direction -- 64-atom simulation cells can be sufficient to allow a nearly finite-size-effect-free calculation, thus making the use of first-principles methods possible. They use molecular dynamics (MD) techniques and propose the use of a sudden approximation which agrees reasonably well with the MD results for selected directions and which allows estimates of Ed without employing an MD simulation and the use of computationally demanding first-principles methods. Comparing the results with experiment, the authors find the full self-consistent first-principles method in conjunction with the sudden approximation to be a reliable and easy method to predict E d . Furthermore, they have examined the temperature dependence of E d for C in SiC and found it to be negligible

  20. Effects of extrinsic point defects in phosphorene: B, C, N, O, and F adatoms

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Gaoxue, E-mail: gaoxuew@mtu.edu, E-mail: pandey@mtu.edu, E-mail: shashi.p.karna.civ@mail.mil; Pandey, Ravindra, E-mail: gaoxuew@mtu.edu, E-mail: pandey@mtu.edu, E-mail: shashi.p.karna.civ@mail.mil [Department of Physics, Michigan Technological University, Houghton, Michigan 49931 (United States); Karna, Shashi P., E-mail: gaoxuew@mtu.edu, E-mail: pandey@mtu.edu, E-mail: shashi.p.karna.civ@mail.mil [U.S. Army Research Laboratory, Weapons and Materials Research Directorate, ATTN: RDRL-WM, Aberdeen Proving Ground, Maryland 21005-5069 (United States)

    2015-04-27

    Phosphorene is emerging as a promising 2D semiconducting material with a direct band gap and high carrier mobility. In this paper, we examine the role of the extrinsic point defects including surface adatoms in modifying the electronic properties of phosphorene using density functional theory. The surface adatoms considered are B, C, N, O, and F with a [He] core electronic configuration. Our calculations show that B and C, with electronegativity close to P, prefer to break the sp{sup 3} bonds of phosphorene and reside at the interstitial sites in the 2D lattice by forming sp{sup 2} like bonds with the native atoms. On the other hand, N, O, and F, which are more electronegative than P, prefer the surface sites by attracting the lone pairs of phosphorene. B, N, and F adsorption will also introduce local magnetic moment to the lattice. Moreover, B, C, N, and F adatoms will modify the band gap of phosphorene, yielding metallic transverse tunneling characters. Oxygen does not modify the band gap of phosphorene, and a diode like tunneling behavior is observed. Our results therefore offer a possible route to tailor the electronic and magnetic properties of phosphorene by the adatom functionalization and provide the physical insights of the environmental sensitivity of phosphorene, which will be helpful to experimentalists in evaluating the performance and aging effects of phosphorene-based electronic devices.

  1. Influence of point defects on the near edge structure of hexagonal boron nitride

    Science.gov (United States)

    McDougall, Nicholas L.; Partridge, Jim G.; Nicholls, Rebecca J.; Russo, Salvy P.; McCulloch, Dougal G.

    2017-10-01

    Hexagonal boron nitride (hBN) is a wide-band-gap semiconductor with applications including gate insulation layers in graphene transistors, far-ultraviolet light emitting devices and as hydrogen storage media. Due to its complex microstructure, defects in hBN are challenging to identify. Here, we combine x-ray absorption near edge structure (XANES) spectroscopy with ab initio theoretical modeling to identify energetically favorable defects. Following annealing of hBN samples in vacuum and oxygen, the B and N K edges exhibited angular-dependent peak modifications consistent with in-plane defects. Theoretical calculations showed that the energetically favorable defects all produce signature features in XANES. Comparing these calculations with experiments, the principle defects were attributed to substitutional oxygen at the nitrogen site, substitutional carbon at the boron site, and hydrogen passivated boron vacancies. Hydrogen passivation of defects was found to significantly affect the formation energies, electronic states, and XANES. In the B K edge, multiple peaks above the major 1 s to π* peak occur as a result of these defects and the hydrogen passivated boron vacancy produces the frequently observed doublet in the 1 s to σ* transition. While the N K edge is less sensitive to defects, features attributable to substitutional C at the B site were observed. This defect was also calculated to have mid-gap states in its band structure that may be responsible for the 4.1-eV ultraviolet emission frequently observed from this material.

  2. Intrinsic Plasma Cell Differentiation Defects in B Cell Expansion with NF-κB and T Cell Anergy Patient B Cells

    Directory of Open Access Journals (Sweden)

    Swadhinya Arjunaraja

    2017-08-01

    Full Text Available B cell Expansion with NF-κB and T cell Anergy (BENTA disease is a novel B cell lymphoproliferative disorder caused by germline, gain-of-function mutations in the lymphocyte scaffolding protein CARD11, which drives constitutive NF-κB signaling. Despite dramatic polyclonal expansion of naive and immature B cells, BENTA patients also present with signs of primary immunodeficiency, including markedly reduced percentages of class-switched/memory B cells and poor humoral responses to certain vaccines. Using purified naive B cells from our BENTA patient cohort, here we show that BENTA B cells exhibit intrinsic defects in B cell differentiation. Despite a profound in vitro survival advantage relative to normal donor B cells, BENTA patient B cells were severely impaired in their ability to differentiate into short-lived IgDloCD38hi plasmablasts or CD138+ long-lived plasma cells in response to various stimuli. These defects corresponded with diminished IgG antibody production and correlated with poor induction of specific genes required for plasma cell commitment. These findings provide important mechanistic clues that help explain both B cell lymphocytosis and humoral immunodeficiency in BENTA disease.

  3. Prediction of point-defect migration energy barriers in alloys using artificial intelligence for atomistic kinetic Monte Carlo applications

    Energy Technology Data Exchange (ETDEWEB)

    Castin, N. [Structural Materials Group, Nuclear Materials Science Institute, Studiecentrum voor Kerneenergie Centre d' etude de l' energie nucleaire (SCK CEN), Boeretang 200, B-2400 Mol (Belgium); Universite Libre de Bruxelles (ULB), Physique des Solides Irradies et Nanostructures (PSIN), CP234 Boulevard du triomphe, Brussels (Belgium); Malerba, L. [Structural Materials Group, Nuclear Materials Science Institute, Studiecentrum voor Kerneenergie Centre d' etude de l' energie nucleaire (SCK CEN), Boeretang 200, B-2400 Mol (Belgium)], E-mail: lmalerba@sckcen.be

    2009-09-15

    We significantly improved a previously proposed method to take into account chemical and also relaxation effects on point-defect migration energy barriers, as predicted by an interatomic potential, in a rigid lattice atomistic kinetic Monte Carlo simulation. Examples of energy barriers are rigorously calculated, including chemical and relaxation effects, as functions of the local atomic configuration, using a nudged elastic bands technique. These examples are then used to train an artificial neural network that provides the barriers on-demand during the simulation for each configuration encountered by the migrating defect. Thanks to a newly developed training method, the configuration can include a large number of neighbour shells, thereby properly including also strain effects. Satisfactory results have been obtained when the configuration includes different chemical species only. The problems encountered in the extension of the method to configurations including any number of point-defects are stated and solutions to tackle them are sketched.

  4. Nucleation of point defects in low-fluence ion-implanted GaAs and GaP

    International Nuclear Information System (INIS)

    Wesch, W.; Wendler, E.; Gaertner, K.

    1992-01-01

    The defect production due to low-fluence medium-mass ion implantation into GaAs and GaP at room temperature is investigated. In the parameter region analysed weakly damaged layers are created containing point defects and point defects complexes. Temperature dependent channeling measurements show different structures of the damage produced in the two materials. The depth profiles of the near-edge optical absorption coefficient K sufficiently correspond to the profiles of the primarily produced vacancy concentration N vac . The absorption coefficient K(N vac ) determined from the depth profiles of the two magnitudes shows a square root dependence for GaAs, whereas for GaP a linear dependence is found. The differences observed are discussed in the frame of different nucleation mechanisms. (orig.)

  5. Formation Energies of Native Point Defects in Strained-Layer Superlattices (Postprint)

    Science.gov (United States)

    2017-06-05

    literature. Then we calculate the formation energy of various NPDs in a number of InAs- GaSb SLS systems. From the calculated defect formation energies...Unclassified Joseph Burns 19b. TELEPHONE NUMBER (Include Area Code) (937) 255-9594 Standard Form 298 (Rev. 8-98) Prescribed by... number of InAs-GaSb SLS systems. From the calculated defect formation energies in SLS rel- ative to that in constituent bulk material, the probability

  6. The evolution of interaction between grain boundary and irradiation-induced point defects: Symmetric tilt GB in tungsten

    Science.gov (United States)

    Li, Hong; Qin, Yuan; Yang, Yingying; Yao, Man; Wang, Xudong; Xu, Haixuan; Phillpot, Simon R.

    2018-03-01

    Molecular dynamics method is used and scheme of calculational tests is designed. The atomic evolution view of the interaction between grain boundary (GB) and irradiation-induced point defects is given in six symmetric tilt GB structures of bcc tungsten with the energy of the primary knock-on atom (PKA) EPKA of 3 and 5 keV and the simulated temperature of 300 K. During the collision cascade with GB structure there are synergistic mechanisms to reduce the number of point defects: one is vacancies recombine with interstitials, and another is interstitials diffuse towards the GB with vacancies almost not move. The larger the ratio of the peak defect zone of the cascades overlaps with the GB region, the statistically relative smaller the number of surviving point defects in the grain interior (GI); and when the two almost do not overlap, vacancy-intensive area generally exists nearby GBs, and has a tendency to move toward GB with the increase of EPKA. In contrast, the distribution of interstitials is relatively uniform nearby GBs and is affected by the EPKA far less than the vacancy. The GB has a bias-absorption effect on the interstitials compared with vacancies. It shows that the number of surviving vacancies statistically has increasing trend with the increase of the distance between PKA and GB. While the number of surviving interstitials does not change much, and is less than the number of interstitials in the single crystal at the same conditions. The number of surviving vacancies in the GI is always larger than that of interstitials. The GB local extension after irradiation is observed for which the interstitials absorbed by the GB may be responsible. The designed scheme of calculational tests in the paper is completely applicable to the investigation of the interaction between other types of GBs and irradiation-induced point defects.

  7. In-Situ Photoexcitation-Induced Suppression of Point Defect Generation in Ion Implanted Silicon

    International Nuclear Information System (INIS)

    Cho, C.R.; Rozgonyi, G.A.; Yarykin, N.; Zuhr, R.A.

    1999-01-01

    The formation of vacancy-related defects in n-type silicon has been studied immediately after implantation of He, Si, or Ge ions at 85 K using in-situ DLTS. A-center concentrations in He-implanted samples reach a maximum immediately after implantation, whereas, with Si or Ge ion implanted samples they continuously increase during subsequent anneals. It is proposed that defect clusters, which emit vacancies during anneals, are generated in the collision cascades of Si or Ge ions. An illumination-induced suppression of A-center formation is seen immediately after implantation of He ions at 85 K. This effect is also observed with Si or Ge ions, but only after annealing. The suppression of vacancy complex formation via photoexcitation is believed to occur due to an enhanced recombination of defects during ion implantation, and results in reduced number of vacancies remaining in the defect clusters. In p-type silicon, a reduction in K-center formation and an enhanced migration of defects are concurrently observed in the illuminated sample implanted with Si ions. These observations are consistent with a model where the injection of excess carriers modifies the defect charge state and impacts their diffusion

  8. Defects and defect processes in nonmetallic solids

    CERN Document Server

    Hayes, W

    2004-01-01

    This extensive survey covers defects in nonmetals, emphasizing point defects and point-defect processes. It encompasses electronic, vibrational, and optical properties of defective solids, plus dislocations and grain boundaries. 1985 edition.

  9. Point Defects and Grain Boundaries in Rotationally Commensurate MoS 2 on Epitaxial Graphene

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Xiaolong [Applied Physics Graduate Program, ‡Department of Materials; Balla, Itamar [Applied Physics Graduate Program, ‡Department of Materials; Bergeron, Hadallia [Applied Physics Graduate Program, ‡Department of Materials; Hersam, Mark C. [Applied Physics Graduate Program, ‡Department of Materials

    2016-03-28

    With reduced degrees of freedom, structural defects are expected to play a greater role in two-dimensional materials in comparison to their bulk counterparts. In particular, mechanical strength, electronic properties, and chemical reactivity are strongly affected by crystal imperfections in the atomically thin limit. Here, ultrahigh vacuum (UHV) scanning tunneling microscopy (STM) and spectroscopy (STS) are employed to interrogate point and line defects in monolayer MoS2 grown on epitaxial graphene (EG) at the atomic scale. Five types of point defects are observed with the majority species showing apparent structures that are consistent with vacancy and interstitial models. The total defect density is observed to be lower than MoS2 grown on other substrates and is likely attributed to the van der Waals epitaxy of MoS2 on EG. Grain boundaries (GBs) with 30° and 60° tilt angles resulting from the rotational commensurability of MoS2 on EG are more easily resolved by STM than atomic force microscopy at similar scales due to the enhanced contrast from their distinct electronic states. For example, band gap reduction to ~0.8 and ~0.5 eV is observed with STS for 30° and 60° GBs, respectively. In addition, atomic resolution STM images of these GBs are found to agree well with proposed structure models. This work offers quantitative insight into the structure and properties of common defects in MoS2 and suggests pathways for tailoring the performance of MoS2/graphene heterostructures via defect engineering.

  10. A DFT study of electronic and magnetic properties of titanium decorating point-defective graphene

    International Nuclear Information System (INIS)

    Zhou, Qingxiao; Fu, Zhibing; Wang, Chaoyang; Tang, Yongjian; Zhang, Hong; Yuan, Lei; Yang, Xi

    2015-01-01

    Graphical abstract: The optimized atomic structures of d absorbing nine Ti atoms: (a) top view and (b) side view. - Highlights: • The stability of Ti-adatoms on the double-vacancy defected graphene was explored by DFT method. • Ti-adatoms adsorbed on different hollow sites exhibited distinct electronic and magnetic properties. • The present of double-vacancy defect in graphene prevents the Ti-adatoms from accumulating to be nanoparticles. - Abstract: We present a study of Ti-adatoms adsorbed on the double-vacancy defected graphene (DG) consisting of pentagonal and octagonal carbon rings using density functional theory (DFT) method. It is shown that the Ti-adatoms can be stably adsorbed on the hollow sites of carbon ring and the appearance of defect enlarges the adsorption energy of Ti atoms than that on perfect graphene. Furthermore, the strong interaction between Ti-adatoms and defected graphene prevents the Ti-adatoms to form clusters. Interestingly, the Ti 9 adsorbed on the DG exhibit symmetry structure. Moreover, the PDOS results show that the hybridization among the Ti-adatoms and the magnetic property of adsorption systems are mainly contributed by the Ti-3d orbitals. These results could provide useful information for the design of metal-carbon coating for the applications based on graphene.

  11. Application of the Point Defect Model to modelling the corrosion of iron based canisters in geological repository

    International Nuclear Information System (INIS)

    Bataillon, C.

    2003-01-01

    A corrosion model for iron and low alloy steels is proposed. This model is essentially based on the Point Defect Model. A modification of the original model has been introduced. To take into consideration the free corrosion case, electron flux has been added. So the mean electric field becomes voltage dependent. As a consequence, no analytical solution for this model is available even in stationary conditions. (authors)

  12. Constitutional and thermal point defects in B2 NiAl

    DEFF Research Database (Denmark)

    Korzhavyi, P. A.; Ruban, Andrei; Lozovoi, A. Y.

    2000-01-01

    . The theory correctly reproduces the ground state for the off-stoichiometric NiAl alloys. The constitutional defects (antisite Ni atoms and Ni vacancies in Ni-rich and Al-rich NiAl, respectively) are shown to form ordered structures in the ground state, in which they tend to avoid each other at the shortest...

  13. Role of point defects and additives in kinetics of hydrogen storage materials

    Science.gov (United States)

    van de Walle, Chris

    2010-03-01

    First-principles computational studies of hydrogen interactions with storage materials can provide direct insight into the processes of H uptake and release, and may help in developing guidelines for designing storage media with improved storage capacity and kinetics. One important conclusion is that the defects involved in kinetics of semiconducting or insulating H-storage materials are charged, and hence their formation energy is Fermi-level dependent and can be affected by the presence of impurities that change the Fermi level [1,2]. This provides an explanation for the role played by transition-metal impurities in the kinetics of NaAlH4 and related materials. Desorption of H and decomposition of NaAlH4 requires not only mass transport of H but also of Al and/or Na. This process is mediated by native defects. We have investigated the structure, stability, and migration enthalpy of native defects based on density functional theory. The results allow us to estimate diffusion activation energies for the defects that may be involved in mass transport. Most of the relevant defects exist in charge states other than neutral, and consideration of these charge states is essential for a proper description of kinetics. We propose specific new mechanisms to explain the observed activation energies and their dependence on the presence of impurities. We have also expanded our studies to materials other than NaAlH4. In the case of LiBH4 and Li4BN3H10 we have found that the calculations have predictive power in terms of identifying which impurities will actually enhance kinetics. Other complex hydrides that we are currently investigating include Li2NH and LiNH2. [4pt] [1] A. Peles and C. G. Van de Walle, Phys. Rev. B 76, 214101 (2007). [0pt] [2] C. G. Van de Walle, A. Peles, A. Janotti, and G. B. Wilson-Short, Physica B 404, 793 (2009).

  14. Point defects induced in LiF by low energy electrons

    International Nuclear Information System (INIS)

    Baldacchini, Giuseppe; Montereali, Rosa Maria; Scacco, Augusto; Cremona, Marco; D'Auria, Giuliano.

    1997-09-01

    A systematic study of the coloring of LiF crystals and films irradiated by 3 keV electrons at various temperatures was carried out analysing their absorption and luminescence spectra. The three stage behaviour of the F coloring curve as a function of the irradiation dose was revealed and the saturation of the process was identified for the first time with this kind of radiation. The kinetics of the defect formation confirmed the expectations derived from the most comprehensive theoretical model developed to explain the coloring process. The irradiation temperature was found to have an influence on both the proportion of different defects created and on their stability and the overall coloring efficiency turned out to be higher when the irradiation was performed on films. Various explanations to these observations are put forward and discussed

  15. Density functional theory calculations of point defects and hydrogen isotopes in Li4SiO4

    Directory of Open Access Journals (Sweden)

    Xiaogang Xiang

    2015-10-01

    Full Text Available The Li4SiO4 is a promising breeder material for future fusion reactors. Radiation induced vacancies and hydrogen isotope related impurities are the major types of point defects in this breeder material. In present study, various kinds of vacancies and hydrogen isotopes related point defects in Li4SiO4 are investigated through density functional theory (DFT calculations. The band gap of Li4SiO4 is determined by UV-Vis diffuse reflectance spectroscopy experiments. Formation energies of all possible charge states of Li, Si and O vacancies are calculated using DFT methods. Formation energies of possible charge states of hydrogen isotopes substitution for Li and O are also calculated. We found that Li-vacancies will dominate among all vacancies in neutral charge state under radiation conditions and the O, Li, and Si vacancies (VO,VLi,VSi are stable in charge states +2, -1, -4 for most of the range of Fermi level, respectively. The interstitial hydrogen isotopes (Hi and substitutional HLi are stable in the charge states +1, 0 for most of the range of Fermi level, respectively. Moreover, substitutional HO are stable in +1 charge states. We also investigated the process of tritium recovery by discussing the interaction between interstitial H and Li-vacancy, O-vacancy, and found that H O + and H Li 0 are the most common H related defects during radiation process.

  16. Stress Concentration in the Bulk Cr2O3: Effects of Temperature and Point Defects

    Directory of Open Access Journals (Sweden)

    Mazharul M. Islam

    2017-01-01

    Full Text Available Modeling the growth and failure of passive oxide films formed on stainless steels is of general interest for the use of stainless steel as structural material and of special interest in the context of life time extension of light water reactors in nuclear power plants. Using the DFT+U approach, a theoretical investigation on the resistance to failure of the chromium-rich inner oxide layer formed at the surface of chromium-containing austenitic alloys (stainless steel and nickel based alloys has been performed. The investigations were done for periodic bulk models. The data at the atomic scale were extrapolated by using the Universal Binding Energy Relationships (UBERs model in order to estimate the mechanical behavior of a 10 μm thick oxide scale. The calculated stress values are in good agreement with experiments. Tensile stress for the bulk chromia was observed. The effects of temperature and structural defects on cracking were investigated. The possibility of cracking intensifies at high temperature compared to 0 K investigations. Higher susceptibility to cracking was observed in presence of defects compared to nondefective oxide, in agreement with experimental observation.

  17. Cyclodextrin inhibits zinc corrosion by destabilizing point defect formation in the oxide layer.

    Science.gov (United States)

    Altin, Abdulrahman; Krzywiecki, Maciej; Sarfraz, Adnan; Toparli, Cigdem; Laska, Claudius; Kerger, Philipp; Zeradjanin, Aleksandar; Mayrhofer, Karl J J; Rohwerder, Michael; Erbe, Andreas

    2018-01-01

    Corrosion inhibitors are added in low concentrations to corrosive solutions for reducing the corrosion rate of a metallic material. Their mechanism of action is typically the blocking of free metal surface by adsorption, thus slowing down dissolution. This work uses electrochemical impedance spectroscopy to show the cyclic oligosaccharide β-cyclodextrin (β-CD) to inhibit corrosion of zinc in 0.1M chloride with an inhibition efficiency of up to 85%. Only a monomolecular adsorption layer of β-CD is present on the surface of the oxide covered metal, with Raman spectra of the interface proving the adsorption of the intact β-CD. Angular dependent X-ray photoelectron spectroscopy (ADXPS) and ultraviolet photoelectron spectroscopy (UPS) were used to extract a band-like diagram of the β-CD/ZnO interface, showing a large energy level shift at the interface, closely resembling the energy level alignment in an n-p junction. The energy level shift is too large to permit further electron transfer through the layer, inhibiting corrosion. Adsorption hence changes the defect density in the protecting ZnO layer. This mechanism of corrosion inhibition shows that affecting the defect chemistry of passivating films by molecular inhibitors maybe a viable strategy to control corrosion of metals.

  18. Diffusion of antimony in silicon in the presence of point defects

    International Nuclear Information System (INIS)

    Yu Xiangkun; Ma, K.B.; Chen, Q.Y.; Wang Xuemei; Liu Jiarui; Chu, W.-K.; Shao Lin; Thompson, Phillip E.

    2007-01-01

    We have investigated the diffusion of Sb in Si in the presence of defects injected by high-energy implantation of Si ions at room temperature. MeV ion implantation increases the concentrations of vacancies, which induce transient-enhanced diffusion of Sb deposited in Si. We observed a significant enhancement of Sb diffusion. Secondary ions mass spectroscopy has been performed on the implanted samples before and after annealing. Rutherford-backscattering spectrometry has been used to characterize the high-energy implantation damage. By fitting diffusion profiles to a linear diffusive model, information about atomic scale diffusion of Sb, i.e. the generation rate of mobile state Sb and its mean migration length were extracted

  19. Study of point defects and matter transport in cubic face centered concentrated alloys

    International Nuclear Information System (INIS)

    Hersant, D.

    1991-01-01

    It is shown that the second moment approximation to the tight binding method allows a functional to be set up which describes transition metals, noble metals and their alloys. It is assumed that the local electronic density of states is rectangular and that the width varies from site to site. It is then shown how the Monte Carlo method can be used to study order in solid solution with a large difference in size between components: atoms of different nature are exchanged and their neighbours are simultaneously displaced in accordance with the microscopic theory of elasticity. The phase diagram of the simulated alloys is then constructed. Experimental results are qualitatively well reproduced but transition temperatures are difficult to evaluate accurately because of a bad estimation of the vibration entropy. A local tendency towards ordering due to chemical effects is shown at the defect proximity. 40 figs., 100 refs

  20. First-principles study of point defects in zinc blende structure AlSb

    International Nuclear Information System (INIS)

    Bao Xiuli; Tao Ye; Ran Yangqiang

    2013-01-01

    The electronic structures of AlSb with vacancy defects were calculated by using density functional theory (DFT) based on the first-principle ultrasoft pseudopotentials method. The results show that the vacancy results in the local lattice distortion and the relaxation of neighboring atoms. Then vacancy effects on electronic the structure of zinc blende structure AlSb were analyzed. The results reveal that Al vacancy causes Fermi level to a lower energy, narrowing the band gap, while Sb vacancy causes Fermi level to a higher energy, narrowing the band gap and changing the semiconductor type of AlSb from p-type to n-type. The optical properties of AlSb with vacancies were investigated. The results indicate that the changes on optical properties mainly focus on low-energy region because of the electronic structure of atom neighboring vacancy. (authors)

  1. Paramagnetic point defects in amorphous thin films of SiO2 and Si3N4: An update

    Science.gov (United States)

    Poindexter, E. H.; Warren, W. L.

    Recent research on point defects in thin films of SiO2 and Si3SN4 on Si is presented and reviewed. In SiO2 it is now clear that no one type of E(prime) center is the sole source of radiation-induced positive charge; hydrogenous moieties or other types of E(prime) are proposed. Molecular orbital theory and easy passivation of E(prime) by H2 suggest that released H might depassivate P(sub b) sites. A charged E(prime)(sub delta) center has been seen in Cl-free SIMOX and thermal oxide film, and it is reassigned to an electron delocalized over four O3 triple bond Si units around a fifth Si. In Si3N4 a new model for the amphoteric charging of Si triple bond N3 moieties is based on local shifts in defect energy with respect to the Fermi level, arising from nonuniform composition; it does not assume negative-U electron correlation. A new defect NN(sub 2)(sup 0) has been identified, with dangling orbital on a 2-coordinated N atom bonded to another N.

  2. Physicochemical characterization of point defects in fluorine doped tin oxide films

    Science.gov (United States)

    Akkad, Fikry El; Joseph, Sudeep

    2012-07-01

    The physical and chemical properties of spray deposited FTO films are studied using FESEM, x-ray diffraction (XRD), x-ray photoelectron spectroscopy (XPS), electrical and optical measurements. The results of XRD measurements showed that the films are polycrystalline (grain size 20-50 nm) with Rutile structure and mixed preferred orientation along the (200) and (110) planes. An angular shift of the XRD peaks after F-doping is observed and interpreted as being due to the formation of substitutional fluorine defects (FO) in presence of high concentration of oxygen vacancies (VO) that are electrically neutral. The electrical neutrality of oxygen vacancies is supported by the observation that the electron concentration n is two orders of magnitude lower than the VO concentration calculated from chemical analyses using XPS measurements. It is shown that an agreement between XPS, XRD, and Hall effect results is possible provided that the degree of deviation from stoichiometry is calculated with the assumption that the major part of the bulk carbon content is involved in O-C bonds. High temperature thermal annealing is found to cause an increase in the FO concentration and a decrease in both n and VO concentrations with the increase of the annealing temperature. These results could be interpreted in terms of a high temperature chemical exchange reaction between the SnO2 matrix and a precipitated fluoride phase. In this reaction, fluorine is released to the matrix and Sn is trapped by the fluoride phase, thus creating substitutional fluorine FO and tin vacancy VSn defects. The enthalpy of this reaction is determined to be approximately 2.4 eV while the energy of formation of a VSn through the migration of SnSn host atom to the fluoride phase is approximately 0.45 eV.

  3. Analysis of the Forward I- V Characteristics of Al-Implanted 4H-SiC p-i- n Diodes with Modeling of Recombination and Trapping Effects Due to Intrinsic and Doping-Induced Defect States

    Science.gov (United States)

    Megherbi, M. L.; Pezzimenti, F.; Dehimi, L.; Saadoune, A.; Della Corte, F. G.

    2018-02-01

    In this paper, the impact of silicon carbide intrinsic defect states, such as Z1/2 and EH6/7 centers, on the forward current-voltage curves of aluminum (Al)-implanted 4H-SiC p-i- n diodes is investigated by means of a physics-based device simulator. During the simulations, an explicit carrier trap effect due to an electrically active defect concentration produced by the Al+ ion implantation process in the anode region was also taken into account. The obtained current-voltage characteristics are compared with those measured experimentally for several samples at different current levels. It is found that intrinsic defect densities as high as the epilayer doping may lead to undesirable device properties and instability of the forward bias behavior. The diode ideality factor and the series resistance increase with the increase of defects and could be controlled by using high-purity epi-wafers. Furthermore, due to their location in the bandgap and capture cross-sections, the impact of Z1/2 centers on the device electrical characteristics is more severe than that of EH6/7 centers.

  4. A Point Mutation in p190A RhoGAP Affects Ciliogenesis and Leads to Glomerulocystic Kidney Defects.

    Directory of Open Access Journals (Sweden)

    Katherine Stewart

    2016-02-01

    Full Text Available Rho family GTPases act as molecular switches regulating actin cytoskeleton dynamics. Attenuation of their signaling capacity is provided by GTPase-activating proteins (GAPs, including p190A, that promote the intrinsic GTPase activity of Rho proteins. In the current study we have performed a small-scale ENU mutagenesis screen and identified a novel loss of function allele of the p190A gene Arhgap35, which introduces a Leu1396 to Gln substitution in the GAP domain. This results in decreased GAP activity for the prototypical Rho-family members, RhoA and Rac1, likely due to disrupted ordering of the Rho binding surface. Consequently, Arhgap35-deficient animals exhibit hypoplastic and glomerulocystic kidneys. Investigation into the cystic phenotype shows that p190A is required for appropriate primary cilium formation in renal nephrons. P190A specifically localizes to the base of the cilia to permit axoneme elongation, which requires a functional GAP domain. Pharmacological manipulations further reveal that inhibition of either Rho kinase (ROCK or F-actin polymerization is able to rescue the ciliogenesis defects observed upon loss of p190A activity. We propose a model in which p190A acts as a modulator of Rho GTPases in a localized area around the cilia to permit the dynamic actin rearrangement required for cilia elongation. Together, our results establish an unexpected link between Rho GTPase regulation, ciliogenesis and glomerulocystic kidney disease.

  5. Carrier-Induced Band-Gap Variation and Point Defects in Zn3N2 from First Principles

    Science.gov (United States)

    Kumagai, Yu; Harada, Kou; Akamatsu, Hirofumi; Matsuzaki, Kosuke; Oba, Fumiyasu

    2017-07-01

    The zinc nitride Zn3N2 is composed of inexpensive and earth-abundant Zn and N elements and shows high electron mobility exceeding 100 cm2 V-1 s-1 . Although various technological applications of Zn3N2 have been suggested so far, the synthesis of high-quality Zn3N2 samples, especially single crystals, is still challenging, and therefore its basic properties are not yet well understood. Indeed, the reported band gaps of as-grown Zn3N2 widely scatter from 0.85 to 3.2 eV. In this study, we investigate the large gap variation of Zn3N2 in terms of the Burstein-Moss (BM) effect and point-defect energetics using first-principles calculations. First, we discuss the relation between electron carrier concentration and optical gaps based on the electronic structure obtained using the Heyd-Scuseria-Ernzerhof hybrid functional. The calculated fundamental band gap is 0.84 eV in a direct-type band structure. Second, thermodynamic stability of Zn3N2 is assessed using the ideal-gas model in conjunction with the rigid-rotor model for gas phases and first-principles phonon calculations for solid phases. Third, carrier generation and compensation by native point defects and unintentionally introduced oxygen and hydrogen impurities are discussed. The results suggest that a significant BM shift occurs mainly due to oxygen substitutions on nitrogen sites and hydrogen interstitials. However, gaps larger than 2.0 eV would not be due to the BM shift because of the Fermi-level pinning caused by acceptorlike zinc vacancies and hydrogen-on-zinc impurities. Furthermore, we discuss details of peculiar defects such as a nitrogen-on-zinc antisite with azidelike atomic and electronic structures.

  6. Thermodynamic Stability of Boron : The Role of Defects and Zero Point Motion

    NARCIS (Netherlands)

    Setten, Michiel J. van; Uijttewaal, Matthé A.; Wijs, Gilles A. de; Groot, Robert A. de

    2007-01-01

    Its low weight, high melting point, and large degree of hardness make elemental boron a technologically interesting material. The large number of allotropes, mostly containing over a hundred atoms in the unit cell, and their difficult characterization challenge both experimentalists and

  7. Thermodynamic stability of boron : The role of defects and zero point motion

    NARCIS (Netherlands)

    van Setten, Michiel J.; Uijttewaal, Matthe A.; de Wijs, Gilles A.; de Groot, Robert A.

    2007-01-01

    Its low weight, high melting point, and large degree of hardness make elemental boron a technologically interesting material. The large number of allotropes, mostly containing over a hundred atoms in the unit cell, and their difficult characterization challenge both experimentalists and

  8. The establishment of atrial septal defect model with interventional management canine: its applied anatomy and technical points

    International Nuclear Information System (INIS)

    Zhu Yufeng; Huang Xinmiao; Bei Yuan; Wang Wei; Hu Jianqiang; Qin Yongwen

    2010-01-01

    Objective: To provide the relevant applied anatomic information for the preparation of atrial septal defect (ASD) model with transcatheter management in canine,and to discuss the technical points in making ASD model under DSA guidance. Methods: Anatomical measurements of the heart specimens,which were obtained from 15 healthy adult hybrid dogs (9 males and 6 females), were performed, from which the relevant anatomic parameters of the atrial septum were calculated. Cardiac 3D reconstruction with 64-sliced spiral CT scan was carried out in 5 dogs and the results were analyzed. According to the trans-illuminated position and angle obtained from 3D reconstruction images both the puncturing of the atrial septum with Brokenbrough needle and the balloon dilatation under fluoroscopic guidance were conducted in 20 dogs (body weight 17 -22 kg) to prepare ASD model. Results: The length and the width of the interauricular septum were (17.8 ± 4.3) mm and (14.5 ± 3.8) mm, respectively. The oval fossa was (11.2 ± 2.7) mm long and (8.7±1.9) mm wide. The distance from the central point of oval fossa to the central point of the orifice of coronary sinus was (7.2 ± 1.3) mm, which was (9.9 ± 1.5) mm to the center of the membranous atrial septum, (13.6 ± 3.1) mm to the middle point of septal tricuspid valve, (12.1 ± 2.3) mm to the central point of the bottom of aortic eminence and (11.3 ± 1.9) mm to the middle point of anterior bicuspid valve. The angle between atrial septal plane and sagittal plane was 15 degree ± 5 degree, and the angle between atrial septal plane and coronal plane was 75 degree ± 5 degree. Thus, the puncture of the interauricular septum was carried out with the dog in right anterior oblique position at 75 degree ± 5 degree. Of the total 20 dogs, ASD model was successfully established in 18, failure of the puncturing occurred in the remaining two, of which one died of cardiac tamponade after the procedure and the other one died of mistakenly puncturing

  9. Trapping of defect point to improve response time via controlled azimuthal anchoring in a vertically aligned liquid crystal cell with polymer wall

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Sang Gyun; Kim, Sung Min; Kim, Youn Sik; Lee, Hee Kyu; Lee, Seung Hee [Polymer BIN Fusion Research Center, School of Advanced Materials Engineering, Chonbuk National University, Chonju, Chonbuk 561-756 (Korea, Republic of); Lyu, Jae-Jin; Kim, Kyeong Hyeon [AMLCD Division, Samsung Electronics, Kiheung, Kyunggi-Do 449-711 (Korea, Republic of); Lu, Ruibo; Wu, Shin-Tson [College of Optics and Photonics, University of Central Florida, Orlando FL 32816 (United States)], E-mail: lsh1@chonbuk.ac.kr

    2008-03-07

    Conventional multi-domain vertically aligned liquid crystal (LC) cells have defect points due to the collision of LC directors during the formation of multiple domains. In addition, the location of defects changes with time resulting in a slow response time. This paper proposes a robust vertically aligned LC cell, where the LCs are locked by polymer walls, and the azimuthal anchoring on the surface of the alignment layer is controlled by the polymerization of a UV curable reactive mesogen monomer. As a result, the defect points are trapped at a single position, resulting in a greatly improved response time.

  10. Nonstoichiometry, point defects and magnetic properties in Sr2FeMoO6−δ double perovskites

    International Nuclear Information System (INIS)

    Kircheisen, R.; Töpfer, J.

    2012-01-01

    The phase stability, nonstoichiometry and point defect chemistry of polycrystalline Sr 2 FeMoO 6−δ (SFMO) was studied by thermogravimety at 1000, 1100, and 1200 °C. Single-phase SFMO exists between −10.2≤log pO 2 ≤−13.7 at 1200 °C. At lower oxygen partial pressure a mass loss signals reductive decomposition. At higher pO 2 a mass gain indicates oxidative decomposition into SrMoO 4 and SrFeO 3−x . The nonstoichiometry δ at 1000, 1100, and 1200 °C was determined as function of pO 2 . SFMO is almost stoichiometric at the upper phase boundary (e.g. δ=0.006 at 1200 °C and log pO 2 =−10.2) and becomes more defective with decreasing oxygen partial pressure (e.g. δ=0.085 at 1200 °C and log pO 2 =−13.5). Oxygen vacancies are shown to represent majority defects. From the temperature dependence of the oxygen vacancy concentration the defect formation enthalpy was estimated (ΔH OV =253±8 kJ/mol). Samples of different nonstoichiometry δ were prepared by quenching from 1200 °C at various pO 2 . An increase of the unit cell volume with increasing defect concentration δ was found. The saturation magnetization is reduced with increasing nonstoichiometry δ. This demonstrates that in addition to Fe/Mo site disorder, oxygen nonstoichiometry is another source of reduced magnetization values. - Graphical abstract: Nonstoichiometry δ of Sr 2 FeMoO 6−δ as function of oxygen partial pressure at 1000, 1100, and 1200 °C. Highlights: ► Sr 2 FeMoO 6−δ is stable at T=1200 °C at low pO 2 only. ► Nonstoichiometry δ measured at 1200, 1100, and 1000 °C. ► Increase of oxygen vacancy concentration with lower pO 2 . ► Reduction of magnetization with increasing nonstoichiometry δ.

  11. Modeling Metallic Precipitate Dissolution in Silicon Under Point Defect Injection: Final Subcontract Report, 20 January 2004--19 January 2005

    Energy Technology Data Exchange (ETDEWEB)

    Tan, T. Y.

    2005-05-01

    We have formulated the problem of gettering of metallic precipitates in Si for which there exists a volume misfit between the precipitate and the Si matrix material. The gettering process is modeled using an Al-Si liquid layer, and the volume misfit associated with dissolving the precipitates is assumed as accommodated by point defects, which may be dominated by vacancies (V), self-interstitials (I), or both contributing. Under the condition that V and I attained dynamical equilibrium, we found that for analytic purposes, the problem reduces to either the V or the I alone case, with the fast-diffusing case dominating. Our initial simulation results on gettering of FeSi2 (with a misfit of -0.15) showed that the process can be sped up by the injection of V.

  12. A point defect model for the general and pitting corrosion on iron-oxide-electrolyte interface deduced from current oscillations

    CERN Document Server

    Pagitsas, M; Sazou, D

    2003-01-01

    Analysis of the passive-active oscillatory region of the Fe-0.75 M H sub 2 SO sub 4 system, perturbed by adding small amounts of halide species, allow the distinction between pitting and general corrosion. Complex periodic and aperiodic current oscillations characterize pitting corrosion whereas monoperiodic oscillations of a relaxation type indicate general corrosion. A point defect model (PDM) is considered for the microscopic description of the growth and breakdown of the iron oxide film. The physicochemical processes leading to different types of corrosion can be clarified in terms of the PDM. Occupation of an anion vacancy by a halide ion results in the localized attack of the passive oxide and pitting corrosion. On the other hand, the formation of surface soluble iron complexes is related to the uniform dissolution of the passive oxide and general corrosion.

  13. Can the Point Defect Model Explain the Influence of Temperature and Anion Size on Pitting of Stainless Steels

    International Nuclear Information System (INIS)

    Blackwood, Daniel J.

    2015-01-01

    The pitting behaviours of 304L and 316L stainless steels were investigated at 3 °C to 90 °C in 1 M solutions of NaCl, NaBr and NaI by potentiodynamic polarization. The temperature dependences of the pitting potential varied according to the anion, being near linear in bromide but exponential in chloride. As a result, at low temperatures grades 304L and 316L steel are most susceptible to pitting by bromide ions, while at high temperatures both stainless steels were more susceptible to pitting by small chloride anions than the larger bromide and iodide. Thus, increasing temperature appears to favour attack by smaller anions. This paper will attempt to rationalise both of the above findings in terms of the point defect model. Initial findings are that qualitatively this approach can be reasonably successful, but not at the quantitative level, possibly due to insufficient data on the mechanical properties of thin passive films

  14. Enhancement of the point defect pinning effect in Mo-doped Bi2212 single crystals of reduced anisotropy

    CERN Document Server

    Han, S H; Dai, Y; Zhang, Y; Zhang, H; Zhao, Y

    2002-01-01

    High quality Bi sub 2 Sr sub 2 CaCu sub 2 sub - sub x Mo sub x O sub y (x = 0, 0.01 and 0.02) single crystals have been grown by a self-flux method in a horizontal temperature gradient and their flux pinning and irreversibility behaviour have been investigated. The irreversibility lines of the undoped and Mo-doped Bi2212 crystals have been greatly improved by reducing the anisotropy parameter gamma. However, this improvement is much more pronounced for Mo-doped crystals than for the undoped ones. The peak effect of magnetization loops also changes with both Mo-doping and gamma. The results provide strong evidence that the point defect pinning served by Mo is greatly enhanced when the anisotropy of the system is reduced.

  15. Magnetic properties of point defect interaction with impurity atoms in Fe-Cr alloys

    Science.gov (United States)

    Nguyen-Manh, D.; Lavrentiev, M. Yu.; Dudarev, S. L.

    2009-04-01

    An integrated ab initio and statistical Monte Carlo investigation has been recently carried out to model the thermodynamic and kinetic properties of Fe-Cr alloys. We found that the conventional Fe-Cr phase diagram is not adequate at low temperature region where the magnetic contribution to the free energy plays an important role in the prediction of an ordered Fe 15Cr phase and its negative enthalpy of formation. The origin of the anomalous thermodynamic and magnetic properties of Fe-Cr alloys can be understood using a tight-binding Stoner model combined with the charge neutrality condition. We investigate the environmental dependence of magnetic moment distributions for various self-interstitial atom dumbbells configurations using spin density maps found using density functional theory calculations. The mixed dumbbell Fe-Cr and Fe-Mn binding energies are found to be positive due to magnetic interactions. Finally, we discuss the relationship between the migration energy of vacancy in Fe-Cr alloys and magnetism at the saddle point configuration.

  16. Contribution to the study of point defects in rare earth metals

    International Nuclear Information System (INIS)

    Boidron, Michel.

    1980-12-01

    In connection with anomalous diffusion in rare earth metals, the different hypothesis put forward to account for this problem are reviewed. After the determination of the activation volume for self diffusion in γ c.c. lanthanum (0,1 mol.), we point out that diffusion data in rare earth metals and actinides cannot be connected with f.d type electronic transition. Diffusion experiments leading to indirect conclusion, positron annihilation experiments have been undertaken. Vacancy formation energies have thus been determined in γ cerium (0.72 +- 0.07 eV) and europium (0.73 +- 0.17 eV); anomalies in the curves are discussed. A self diffusion mechanism via relaxed vacancies is proposed for γ cerium, such an hypothesis being valid for centred cubic phases. In a second part, neutron irradiations of europium at 20 K lead mainly to interstitials properties (recovery stage centred at 71 K interpreted as stage I and corresponding activation energy for migration: 0.22 +- 0.06 eV). The observed linear relation between migration energy and the peak temperature of the recovery stage has been quantitatively demonstrated (stage I: Em(eV) approximately Q.003 TID (K)) [fr

  17. Intrinsic defects, nonstoichiometry and aliovalent doping of A.sup.2+./sup. B.sup.4+./sup.O.sub.3./sub. perovskite scintillators

    Czech Academy of Sciences Publication Activity Database

    Casillas-Trujillo, L.; Andersson, D.A.; Dorado, B.; Nikl, Martin; Sickafus, K.E.; McClellan, K.J.; Stanek, C.R.

    2014-01-01

    Roč. 251, č. 11 (2014), s. 2279-2286 ISSN 0370-1972 Institutional support: RVO:68378271 Keywords : atomistic simulation * defects * nonstoichiometry * perovskites * scintillators Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.489, year: 2014

  18. Point defect reduction in MOCVD (Al)GaN by chemical potential control and a comprehensive model of C incorporation in GaN

    Science.gov (United States)

    Reddy, Pramod; Washiyama, Shun; Kaess, Felix; Kirste, Ronny; Mita, Seiji; Collazo, Ramon; Sitar, Zlatko

    2017-12-01

    A theoretical framework that provides a quantitative relationship between point defect formation energies and growth process parameters is presented. It enables systematic point defect reduction by chemical potential control in metalorganic chemical vapor deposition (MOCVD) of III-nitrides. Experimental corroboration is provided by a case study of C incorporation in GaN. The theoretical model is shown to be successful in providing quantitative predictions of CN defect incorporation in GaN as a function of growth parameters and provides valuable insights into boundary phases and other impurity chemical reactions. The metal supersaturation is found to be the primary factor in determining the chemical potential of III/N and consequently incorporation or formation of point defects which involves exchange of III or N atoms with the reservoir. The framework is general and may be extended to other defect systems in (Al)GaN. The utility of equilibrium formalism typically employed in density functional theory in predicting defect incorporation in non-equilibrium and high temperature MOCVD growth is confirmed. Furthermore, the proposed theoretical framework may be used to determine optimal growth conditions to achieve minimum compensation within any given constraints such as growth rate, crystal quality, and other practical system limitations.

  19. Point defects and irradiation in oxides: simulations at the atomic scale; Defauts ponctuels et irradiation dans les oxydes: simulation a l'echelle atomique

    Energy Technology Data Exchange (ETDEWEB)

    Crocombette, J.P

    2005-12-15

    The studies done by Jean-Paul Crocombette between 1996 and 2005 in the Service de Recherches de Metallurgie Physique of the Direction de l'Energie Nucleaire in Saclay are presented in this Habilitation thesis. These works were part of the material science researches on the ageing, especially under irradiation, of oxides of interest for the nuclear industry. In this context simulation studies at the atomic scale were performed on two elementary components of ageing under irradiation : point defects and displacement cascades ; using two complementary simulation techniques : ab initio electronic structure calculations and empirical potential molecular dynamics. The first part deals with point defects : self defects (vacancies or interstitials) or hetero-atomic dopants. One first recalls the energetics of such defects in oxides, the specific features of defects calculations and the expected accuracy of these calculations. Then one presents the results obtained on uranium dioxide, oxygen in silver and amorphous silica. The second part tackles the modelling of disintegration recoil nuclei in various?displacement cascades created by crystalline matrices for actinide waste disposal. Cascade calculations give access to the amorphization mechanisms under irradiation of these materials. One thus predicts that the amorphization in zircon takes place directly in the tracks whereas in lanthanum zirconate, the amorphization proceeds through the accumulation of point defects. Finally the prospects of these studies are discussed. (author)

  20. Adsorption and Photodesorption of CO from Charged Point Defects on TiO 2 (110)

    Energy Technology Data Exchange (ETDEWEB)

    Mu, Rentao; Dahal, Arjun P.; Wang, Zhitao; Dohnalek, Zdenek; Kimmel, Gregory A.; Petrik, Nikolay G.; Lyubinetsky, Igor V.

    2017-09-12

    Adsorption and photodesorption of weakly-bound carbon monoxide, CO, from reduced and hydroxylated rutile TiO2(110) (r- and h- TiO2(110)) at sub-monolayer coverages is studied with atomically-resolved scanning tunneling microscopy (STM) along with ensemble-averaged temperature-programmed desorption (TPD) and angle-resolved photon-stimulated desorption (PSD) at low temperatures ( 50 K). STM data weighted by the concentration of each kind of adsorption sites on r-TiO2(110) give an adsorption probability which is the highest for the bridging oxygen vacancies (VO) and very low for the Ti5c sites closest to VO. Occupancy of the remaining Ti5c sites with CO is significant, but smaller than for VO. The probability distribution for the different adsorption sites corresponds to a very small difference in CO adsorption energies: < 0.02 eV. We also find that UV irradiation stimulates both diffusion and desorption of CO at low temperature. CO photodesorbs primarily from the vacancies with a bi-modal angular distribution. In addition to a major, normal to the surface component, there is a broader cosine component indicating scattering from the surface which likely also leads to photo-stimulated diffusion. Hydroxylation of VO’s does not significantly change the CO PSD yield and angular distribution, indicating that not atomic but rather electronic surface defects are involved in the site-specific PSD process. We suggest that photodesorption can be initiated by recombination of photo-generated holes with excess unpaired electrons localized near the surface point-defect (either VO or bridging hydroxyl), leading to the surface atoms rearrangement and ejection of the weakly-bound CO molecules.

  1. Research Update: Point defects in CdTexSe1−x crystals grown from a Te-rich solution for applications in detecting radiation

    Directory of Open Access Journals (Sweden)

    R. Gul

    2015-04-01

    Full Text Available We investigated cadmium telluride selenide (CdTeSe crystals, newly grown by the Traveling Heater Method (THM, for the presence and abundance of point defects. Current Deep Level Transient spectroscopy (I-DLTS was used to determine the energies of the traps, their capture cross sections, and densities. The bias across the detectors was varied from 1 to 30 V. Four types of point defects were identified, ranging from 10 meV to 0.35 eV. Two dominant traps at energies of 0.18 eV and 0.14 eV were studied in depth. Cd vacancies are found at lower concentrations than other point defects present in the material.

  2. Intrinsic Catalytic Activity of Graphene Defects for the Co(II/III)(bpy)3 Dye-Sensitized Solar Cell Redox Mediator.

    Science.gov (United States)

    Roy-Mayhew, Joseph D; Pope, Michael A; Punckt, Christian; Aksay, Ilhan A

    2016-04-13

    We demonstrate that functionalized graphene, rich with lattice defects but lean with oxygen sites, catalyzes the reduction of Co(III)(bpy)3 as well as platinum does, exhibiting a rate of heterogeneous electron transfer, k0, of ∼6 × 10(-3) cm/s. We show this rate to be an order of magnitude higher than on oxygen-site-rich graphene oxide, and over 2 orders of magnitude higher than on the basal plane of graphite (as a surrogate for pristine graphene). Furthermore, dye-sensitized solar cells using defect-rich graphene monolayers perform similarly to those using platinum nanoparticles as the catalyst.

  3. First-principles study on oxidation effects in uranium oxides and high-pressure high-temperature behavior of point defects in uranium dioxide

    Science.gov (United States)

    Geng, Hua Y.; Song, Hong X.; Jin, K.; Xiang, S. K.; Wu, Q.

    2011-11-01

    Formation Gibbs free energy of point defects and oxygen clusters in uranium dioxide at high-pressure high-temperature conditions are calculated from first principles, using the LSDA+U approach for the electronic structure and the Debye model for the lattice vibrations. The phonon contribution on Frenkel pairs is found to be notable, whereas it is negligible for the Schottky defect. Hydrostatic compression changes the formation energies drastically, making defect concentrations depend more sensitively on pressure. Calculations show that, if no oxygen clusters are considered, uranium vacancy becomes predominant in overstoichiometric UO2 with the aid of the contribution from lattice vibrations, while compression favors oxygen defects and suppresses uranium vacancy greatly. At ambient pressure, however, the experimental observation of predominant oxygen defects in this regime can be reproduced only in a form of cuboctahedral clusters, underlining the importance of defect clustering in UO2+x. Making use of the point defect model, an equation of state for nonstoichiometric oxides is established, which is then applied to describe the shock Hugoniot of UO2+x. Furthermore, the oxidization and compression behavior of uranium monoxide, triuranium octoxide, uranium trioxide, and a series of defective UO2 at 0 K are investigated. The evolution of mechanical properties and electronic structures with an increase of the oxidation degree are analyzed, revealing the transition of the ground state of uranium oxides from metallic to Mott insulator and then to charge-transfer insulator due to the interplay of strongly correlated effects of 5f orbitals and the shift of electrons from uranium to oxygen atoms.

  4. High Defect Tolerance in Lead Halide Perovskite CsPbBr3.

    Science.gov (United States)

    Kang, Jun; Wang, Lin-Wang

    2017-01-19

    The formation energies and charge-transition levels of intrinsic point defects in lead halide perovskite CsPbBr 3 are studied from first-principles calculations. It is shown that the formation energy of dominant defect under Br-rich growth condition is much lower than that under moderate or Br-poor conditions. Thus avoiding the Br-rich condition can help to reduce the defect concentration. Interestingly, CsPbBr 3 is found to be highly defect-tolerant in terms of its electronic structure. Most of the intrinsic defects induce shallow transition levels. Only a few defects with high formation energies can create deep transition levels. Therefore, CsPbBr 3 can maintain its good electronic quality despite the presence of defects. Such defect tolerance feature can be attributed to the lacking of bonding-antibonding interaction between the conduction bands and valence bands.

  5. Intrinsic Motivation.

    Science.gov (United States)

    the activity. There has been very little research and theorizing which considers the topic of intrinsic motivation , yet there is a substantial amount...reported within the framework of intrinsic motivation , yet the paper reinterprets the work within that framework. It considers several approaches of

  6. Production and aging of paramagnetic point defects in P-doped floating zone silicon irradiated with high fluence 27 MeV electrons

    Science.gov (United States)

    Joita, A. C.; Nistor, S. V.

    2018-04-01

    Enhancing the long term stable performance of silicon detectors used for monitoring the position and flux of the particle beams in high energy physics experiments requires a better knowledge of the nature, stability, and transformation properties of the radiation defects created over the operation time. We report the results of an electron spin resonance investigation in the nature, transformation, and long term stability of the irradiation paramagnetic point defects (IPPDs) produced by high fluence (2 × 1016 cm-2), high energy (27 MeV) electrons in n-type, P-doped standard floating zone silicon. We found out that both freshly irradiated and aged (i.e., stored after irradiation for 3.5 years at 250 K) samples mainly contain negatively charged tetravacancy and pentavacancy defects in the first case and tetravacancy defects in the second one. The fact that such small cluster vacancy defects have not been observed by irradiation with low energy (below 5 MeV) electrons, but were abundantly produced by irradiation with neutrons, strongly suggests the presence of the same mechanism of direct formation of small vacancy clusters by irradiation with neutrons and high energy, high fluence electrons, in agreement with theoretical predictions. Differences in the nature and annealing properties of the IPPDs observed between the 27 MeV electrons freshly irradiated, and irradiated and aged samples were attributed to the presence of a high concentration of divacancies in the freshly irradiated samples, defects which transform during storage at 250 K through diffusion and recombination processes.

  7. On the application of the weak-beam technique to the determination of the sizes of small point-defect clusters in ion-irradiated copper

    International Nuclear Information System (INIS)

    Jenkins, M. L.

    1998-01-01

    We have made an analysis of the conditions necessary for the successful use of the weak-beam technique for identifying and characterizing small point-defect clusters in ion-irradiated copper. The visibility of small defects was found to depend only weakly on the magnitude of the beam-convergence. In general, the image sizes of small clusters were found to be most sensitive to the magnitude of Sa with the image sizes of some individual defects changing by large amounts with changes as small as 0.025 nm -1 . The most reliable information on the true defect size is likely to be obtained by taking a series of 5-9 micrographs with a systematic variation of deviation parameter from 0.2-0.3 nm -1 . This procedure allows size information to be obtained down to a resolution limit of about 0.5 nm for defects situated throughout a foil thickness of 60 nm. The technique has been applied to the determination of changes in the sizes of small defects produced by a low-temperature in-situ irradiation and annealing experiment

  8. High energy ion irradiated III-N semiconductors (AlN, GaN, InN): study of point defect and extended defect creation

    International Nuclear Information System (INIS)

    Sall, Mamour

    2013-01-01

    Nitride semiconductors III N (AlN, GaN, InN) have interesting properties for micro-and opto-electronic applications. In use, they may be subjected to different types of radiation in a wide range of energy. In AlN, initially considered insensitive to electronic excitations (Se), we have demonstrated a novel type of synergy between Se and nuclear collisions (Sn) for the creation of defects absorbing at 4.7 eV. In addition, another effect of Se is highlighted in AlN: climb of screw dislocations under the influence of Se, at high fluence. In GaN, two mechanisms can explain the creation of defects absorbing at 2.8 eV: a synergy between Se and Sn, or a creation only due to Sn but with a strong effect of the size of displacement cascades. The study, by TEM, of the effects of Se in the three materials, exhibits behaviors highly dependent on the material while they all belong to the same family with the same atomic structure. Under monoatomic ion irradiations (velocity between 0.4 and 5 MeV/u), while discontinuous tracks are observed in GaN and InN, no track is observed in AlN with the highest electronic stopping power (33 keV/nm). Only fullerene clusters produce tracks in AlN. The inelastic thermal spike model was used to calculate the energies required to produce track in AlN, GaN and InN, they are 4.2 eV/atom, 1.5 eV/atom and 0.8 eV/atom, respectively. This sensitivity difference according to Se, also occurs at high fluence. (author)

  9. Study of elementary point defects and of the dynamic of defects associated to irradiation in alpha AgZn solid solutions

    International Nuclear Information System (INIS)

    Beretz, Daniel.

    1980-11-01

    After briefly recalling the structural defects created in a crystal lattice during irradiation and the evolution in the concentrations of defects under irradiation, some particulars are given respecting the parameters which describe the relaxation effects associated with the short distance variations of the order brought about by applied stress, and the mechanical hauling appliances developed for effecting measurements in a pool reactor, and in line behind a Van de Graaff accelerator, as well as on the irradiation conditions. The results are presented of the comparative study of the effects of gamma radiation irradiation, of fast electrons, reactor neutrons and 14 MeV neutrons made on the same alloy, namely: Ag - 24 at % Zn. The study particularly covers the aspects specific to the cascades of atomic movements brought about by the neutron bombardment: asymmetry of the emission of vacancies and auto-interstitials and production of holes by the collapse of the cascades. The results relative to the mobility of the vacancies and auto-interstitials are presented. The study covers the entire range of the alpha - AgZn solid solutions extending from pure silver to the levels next to the thirty percent atomic of zinc. It rests essentially on the analysis of the ordering kinetics under the flux of electrons, measured by mechanical hauling. It also makes use of electric resistivity measurements after quenching or irradiation at low temperature. Finally, the very marked slowing down of the auto-interstitial observed in this system is discussed in terms of the effect of the zinc level on the measured mobility parameters [fr

  10. Direct observation of the point-defect structure of depleted-zones in ion-irradiated metals

    Energy Technology Data Exchange (ETDEWEB)

    Wei, C.

    1978-01-01

    The point-defect structure of individual depleted zones has been studied systematically. Four-pass zone-refined tungsten field-ion microscope (FIM) specimens were irradiated in-situ at 10 K with 30 keV Cr/sup +/, Mo/sup +/, or W/sup +/ ions to a total dose of (2 to 10) x 10/sup 12/ ion cm/sup -2/ and examined by the pulse field-evaporation technique at 10 K. The experimental conditions were such that each depleted zone was created by a single incident-ion. The number of vacant lattice sites within a depleted zone was compared with a modified Kinchin--Pease model. The radial distribution function was determined for each depleted zone; it was found that the vacant lattice sites within the volume of each depleted zone tended to exist in a highly clustered state. It was found that the diameter D of each depleted zone was described by the equation D approximately equal to (y/sup 2/)/sup /sup 1///sub 2// where (y/sup 2/)/sup /sup 1///sub 2// is the second moment of the theoretical distribution curve, of the fraction of incident ion energy deposited in atom motion, transverse to the direction of the incident ion-beam. The spatial distribution of self-interstitial atoms (SIAs) in a specimen irradiated with 30 keV Cr/sup +/ ions and in a specimen irradiated with 18 keV Au/sup +/ ions, at 10 K, was determined. A low bound to the average range of replacement collision sequences (RCSs) was found to be 175 +- 85 A. A detailed FIM study was also made of the vacancy structure of a (220) platelet created by a single 30 keV W/sup +/ ion in a platinum-4.0 at. % gold alloy; the specimen was irradiated at 40 K and then isochronally warmed to 100 K. The (220) platelet was found to consist of 31 vacant lattice sites, lying in four (220) planes, and clustered in a disc-shaped region which is approximately 20 A in diameter. It was suggested that prismatic dislocation loops lying on (220) type planes in ion or fast neutron irradiated platinum can form as a result of the direct collapse of

  11. On the passive and semiconducting behavior of severely deformed pure titanium in Ringer's physiological solution at 37°C: A trial of the point defect model.

    Science.gov (United States)

    Ansari, Ghazaleh; Fattah-Alhosseini, Arash

    2017-06-01

    The effects of sever plastic deformation through multi-pass accumulative roll bonding on the passive and semiconducting behavior of pure titanium is evaluated in Ringer's physiological solution at 37°C in the present paper. Produced results by polarization plots and electrochemical impedance spectroscopy measurements revealed a significant advance in the passive response of the nano-grained sample compared to that of the annealed pure titanium. Also, Mott-Schottky test results of the nano-grained pure titanium represented a lower donor density and reduced flat-band potential in the formed passive film in comparison with the annealed sample. Moreover, based on the Mott-Schottky analysis in conjunction with the point defect model, it was suggested that with increase in formation potential, the calculated donor density of both annealed and nano-grained samples decreases exponentially and the thickness of the passive film linearly increases. These observations were consistent with the point defect model predictions, considering that the point defects within the passive film are metal interstitials, oxygen vacancies, or both. From the viewpoint of passive and semiconducting behavior, nano-grained pure titanium appeared to be more suitable for implant applications in simulate human body environment compared to annealed pure titanium. Copyright © 2017 Elsevier B.V. All rights reserved.

  12. Study of the point defect creation and of the excitonic luminescence in alkali halides irradiated by swift heavy ions

    International Nuclear Information System (INIS)

    Protin, L.

    1994-01-01

    The aim of this experimental thesis is to study the excitonic mechanisms and of the defect creation, in NaCl and KBr, under dense electronic excitations induced by swift heavy ion irradiations. In the first part, we present the main features of the interaction of swift heavy ions with solid targets, and after we review the well known radiolytic processes of the defect creation during X-ray irradiation. In the second chapter, we describe our experimental set-up. In the chapter III, we present our results of the in-situ optical absorption measurements. This results show that defect creation is less sensitive to the temperature than during a classical irradiation. Besides, we observe new mechanisms concerning the defect aggregation. In the chapter IV, we present the results of excitonic luminescence induced by swift by swift heavy ions. We observe that the luminescence yields only change with the highest electronic stopping power. In the chapter V, we perform thermal spike and luminescence yields calculations and we compare the numerical results to the experiments presented in the chapter IV. (author). 121 refs., 65 figs., 30 tabs

  13. DFT study of the effect of hydrostatic pressure on formation and migration enthalpies of intrinsic point defects in single crystal Si

    Energy Technology Data Exchange (ETDEWEB)

    Sueoka, Koji; Kamiyama, Eiji; Kariyazaki, Hiroaki [Department of Communication Engineering, Okayama Prefectural University, 111 Kuboki, Soja, Okayama 719-1197 (Japan); Vanhellemont, Jan [Department of Solid State Sciences, Ghent University, Krijgslaan 281-S1, 9000 Gent (Belgium)

    2012-10-15

    The dependence of the formation enthalpy (H{sub f}) of the self-interstitial I and the vacancy V on the hydrostatic pressure P was obtained by calculating the formation energy (E{sub f}) and the relaxation volume (v{sub f}). The dependence of the migration enthalpy (H{sub m}) of I and V on the pressure P was also obtained by calculating the change of H{sub f} during the migration. Density functional theory calculations were used with 216-atom supercells and with special attention for the convergence of the calculations. The neutral I and V are found to have quasi constant formation energies E{sub f}{sup I} and E{sub f}{sup V} for pressures between - 1 GPa to 1 GPa. For the relaxation volume, v{sub f}{sup I} is almost constant while v{sub f}{sup V} decreases with increasing pressure P. The formation and migration enthalpies H{sub f}{sup I} and H{sub m}{sup I}, respectively, at the [110] dumbbell site are given by H{sub f}{sup I} = 3.425 - 0.055 x P (eV) and H{sub m}{sup I} = 0.981 - 0.039 x P (eV) with hydrostatic pressure P given in GPa. The H{sub f}{sup V} and H{sub m}{sup V} dependencies on P are given by H{sub f}{sup V} =3.543 - 0.024 x P{sup 2}- 0.009 x P (eV) and H{sub m}{sup V} = 0.249 + 0.005 x P{sup 2} - 0.030 x P (eV). These results indicate that hydrostatic pressure leads to a slight increase of the equilibrium concentration and diffusion of vacancies but this increase is considerably smaller than that of self-interstitials (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  14. OH-point defects in quartz in B- and Li-bearing systems and their application to pegmatites

    Science.gov (United States)

    Baron, M. A.; Stalder, R.; Konzett, J.; Hauzenberger, C. A.

    2015-01-01

    OH incorporation in quartz in Al-, B- and Li-bearing systems (granitic systems containing tourmaline or spodumene) was studied experimentally in order to investigate the effect of pressure, temperature and chemical impurities on the generation of OH-defects. High-pressure experiments were carried out at pressures between 5 and 25 kbar and temperatures between 800 and 900 °C, and OH-contents in quartz were calculated from IR absorption spectra measured on oriented quartz crystals. IR absorption features were assigned to impurity substitutions, such as AlOH (3,420, 3,379 and 3,315 cm-1) and BOH (3,595 cm-1), LiOH (3,483 cm-1), and hydrogarnet substitution (4H)Si defects (3,583 cm-1). Results indicate a negative correlation of incorporated Al-specific OH-defect content versus pressure (630 ± 130 wt ppm H2O at 5 kbar to 102 ± 6 wt ppm H2O at 25 kbar), but no clear correlation of B-specific OH-defects with pressure. In runs initially containing spodumene, virtually OH-free quartzes were observed at pressures ≥10 kbar, where impurity cations compensate each other forming an anhydrous eucryptite-defect component. In contrast, at 5 kbar, both Li- ad Al-specific OH-defects are observed (corresponding to 470 ± 75 wt ppm H2O). Results from this study may therefore be used to monitor formation conditions of quartz in terms of pressure and trace metal saturation of the crystallizing petrological system. IR spectra obtained from natural quartz grains from a tourmaline-bearing pegmatite exhibit B- and Al-related OH-bands. The B-related OH-band is also exhibited in quartz from a tourmaline + spodumene-bearing pegmatite. Li- and Al-related OH-bands, however, are subordinate or not observed at all in the spodumene-bearing system, which suggests that OH-vibrations do not reflect absolute Li-contents in quartz due to efficient coupled substitution involving Al. Data from experimental runs and natural specimens indicate that the B-related OH-band can be used as a rough proxy for

  15. Properties of point defects either native or induced by irradiation in the 3C and 6H polytypes of silicon carbide determined by positron annihilation and EPR

    International Nuclear Information System (INIS)

    Kerbiriou, X.

    2006-02-01

    Potential applications of silicon carbide (SiC) in micro-electronics have justified many studies on point defects, which play an important role in the electrical compensation. Moreover, this material has many assets to take part in the fissile materials confining in the gas cooled reactors of the future (4. generation). In this thesis, we have used Electronic Paramagnetic Resonance and Positron Annihilation Spectroscopy to study the properties of point defects (nature, size, charge state, migration and agglomeration during annealing), either native or induced by irradiation with various particles (H + , e - , carbon ions), in the 3C and 6H polytypes of SiC. The positron annihilation study of native defects in 6H-SiC has shown the presence of a strong concentration of non-vacancy traps of acceptor type, which are not present in the 3C-SiC crystals. The nature of the defects detected after irradiation with low energy electrons (190 keV) depends on the polytype. Indeed, while silicon Frenkel pairs and carbon mono-vacancies are detected in the 6H crystals, only carbon mono-vacancies are detected in the 3C crystals. We propose that these differences concerning the populations of detected point defects result from different values of the silicon displacement threshold energy for the two polytypes (approximately 20 eV for 6H and 25 V for 3C). In addition, the irradiations with 12 MeV protons and 132 MeV carbon ions have created silicon mono-vacancies as well as VSi-VC di-vacancies. Neither the particle (protons or ions carbon), nor the polytype (3C or 6H) influence the nature of the generated defects. Finally the study of the annealing of 6H-SiC monocrystals irradiated with 12 MeV protons have revealed several successive processes. The most original result is the agglomeration of the silicon mono-vacancies with the VSi-VC di-vacancies which leads to the formation of VSi-VC-VSi tri-vacancies. (author)

  16. Effect of ion velocity on creation of point defects halos of latent tracks in LiF

    Czech Academy of Sciences Publication Activity Database

    Volkov, A.E.; Schwartz, K.; Medvedev, Nikita; Trautmann, C.

    2017-01-01

    Roč. 407, Sep (2017), s. 80-85 ISSN 0168-583X R&D Projects: GA MŠk LG15013; GA MŠk(CZ) LM2015083 Institutional support: RVO:68378271 Keywords : swift heavy ion * electronic stopping * track * LiF * color centers * defect halo Subject RIV: BL - Plasma and Gas Discharge Physics OBOR OECD: Fluids and plasma physics (including surface physics) Impact factor: 1.109, year: 2016

  17. The critical role of point defects in improving the specific capacitance of δ-MnO2 nanosheets

    Energy Technology Data Exchange (ETDEWEB)

    Gao, Peng; Metz, Peter; Hey, Trevyn; Gong, Yuxuan; Liu, Dawei; Edwards, Doreen D.; Howe, Jane Y.; Huang, Rong; Misture, Scott T.

    2017-02-23

    3D porous nanostructures built from 2D δ-MnO2 nanosheets are an environmentally friendly and industrially scalable class of supercapacitor electrode material. While both the electrochemistry and defects of this material have been studied, the role of defects in improving the energy storage density of these materials has not been addressed. In this work, δ-MnO2 nanosheet assemblies with 150 m2 g-1 specific surface area are prepared by exfoliation of crystalline KxMnO2 and subsequent reassembly. Equilibration at different pH introduces intentional Mn vacancies into the nanosheets, increasing pseudocapacitance to over 300 F g-1, reducing charge transfer resistance as low as 3 Ω, and providing a 50% improvement in cycling stability. X-ray absorption spectroscopy and high-energy X-ray scattering demonstrate a correlation between the defect content and the improved electrochemical performance. The results show that Mn vacancies provide ion intercalation sites which concurrently improve specific capacitance, charge transfer resistance and cycling stability.

  18. Analysed a defective of the machine for a cap-tube nuclear fuel element ME-27 from its electricity point of view

    International Nuclear Information System (INIS)

    Achmad Suntoro

    2009-01-01

    It has been analysed a defective of the machine for a cap-tube nuclear fuel element ME-27 from its electricity point of view. The machine uses magnetic force resistance welding technique. A short circuit was happened within the machine because the nut for tightening high voltage cable for welding transformer was broken so that the cable touched the machine body and produced the short circuit. This condition made both the primary circuit breaker in the building down and produced high voltage pulse induction to the electronic circuit within the machine so that one of its electronic components was defective. This case becomes warnings on how important of tightening a nut according to its strength specification (using wrench torque) and the necessity of voltage transient limitation circuit to be installed. Both of the warnings are necessary for any equipment consuming high electric current oriented such as the ME-27 machine. (author)

  19. On the interplay of point defects and Cd in non-polar ZnCdO films

    International Nuclear Information System (INIS)

    Zubiaga, A.; Reurings, F.; Tuomisto, F.; Plazaola, F.; García, J. A.; Kuznetsov, A. Yu.; Egger, W.; Zúñiga-Pérez, J.; Muñoz-Sanjosé, V.

    2013-01-01

    Non-polar ZnCdO films, grown over m- and r-sapphire with a Cd concentration ranging between 0.8% and 5%, have been studied by means of slow positron annihilation spectroscopy (PAS) combined with chemical depth profiling by secondary ion mass spectroscopy and Rutherford back-scattering. Vacancy clusters and Zn vacancies with concentrations up to 10 17 cm −3 and 10 18 cm −3 , respectively, have been measured inside the films. Secondary ion mass spectroscopy results show that most Cd stays inside the ZnCdO film but the diffused atoms can penetrate up to 1.3 μm inside the ZnO buffer. PAS results give an insight to the structure of the meta-stable ZnCdO above the thermodynamical solubility limit of 2%. A correlation between the concentration of vacancy clusters and Cd has been measured. The concentration of Zn vacancies is one order of magnitude larger than in as-grown non-polar ZnO films and the vacancy cluster are, at least partly, created by the aggregation of smaller Zn vacancy related defects. The Zn vacancy related defects and the vacancy clusters accumulate around the Cd atoms as a way to release the strain induced by the substitutional Cd Zn in the ZnO crystal.

  20. On the interplay of point defects and Cd in non-polar ZnCdO films

    Energy Technology Data Exchange (ETDEWEB)

    Zubiaga, A.; Reurings, F.; Tuomisto, F. [Department of Applied Physics, Aalto University, P.O. Box 11100, 00076 Aalto, Espoo (Finland); Plazaola, F. [Elektrizitatea eta Elektronika/Fisika Aplikatua II Sailak, Euskal Herriko Unibertsitatea, Posta Kutxatila 644, 48080 Bilbao (Spain); Garcia, J. A. [Fisika Aplikatua II Saila, Euskal Herriko Unibertsitatea, Posta Kutxatila 644, 48080 Bilbao (Spain); Kuznetsov, A. Yu. [Department of Physics, University of Oslo, P.O. Box 1048 Blindern, NO-0316 Oslo (Norway); Egger, W. [Inst. fuer Angewandte Physik und Messtechnik, Univ. der Bundeswehr Muenchen, 87755 Neubiberg (Germany); Zuniga-Perez, J. [CRHEA CNRS, F-06560 Valbonne (France); Munoz-Sanjose, V. [Dept. de Fisica Aplicada i Electromagnetisme, c/ Doctor Moliner 50, E-46100 Burjassot (Valencia) (Spain)

    2013-01-14

    Non-polar ZnCdO films, grown over m- and r-sapphire with a Cd concentration ranging between 0.8% and 5%, have been studied by means of slow positron annihilation spectroscopy (PAS) combined with chemical depth profiling by secondary ion mass spectroscopy and Rutherford back-scattering. Vacancy clusters and Zn vacancies with concentrations up to 10{sup 17} cm{sup -3} and 10{sup 18} cm{sup -3}, respectively, have been measured inside the films. Secondary ion mass spectroscopy results show that most Cd stays inside the ZnCdO film but the diffused atoms can penetrate up to 1.3 {mu}m inside the ZnO buffer. PAS results give an insight to the structure of the meta-stable ZnCdO above the thermodynamical solubility limit of 2%. A correlation between the concentration of vacancy clusters and Cd has been measured. The concentration of Zn vacancies is one order of magnitude larger than in as-grown non-polar ZnO films and the vacancy cluster are, at least partly, created by the aggregation of smaller Zn vacancy related defects. The Zn vacancy related defects and the vacancy clusters accumulate around the Cd atoms as a way to release the strain induced by the substitutional Cd{sub Zn} in the ZnO crystal.

  1. High-voltage electron-microscope investigation of point-defect agglomerates in irradiated copper during in-situ annealing

    International Nuclear Information System (INIS)

    Jaeger, W.; Urban, K.; Frank, W.

    1980-01-01

    Thin copper foils were irradiated with 650 keV electrons at 10 K in a high-voltage electron microscope (HVEM) to doses phi in the range 2 x 10 23 electrons/m 2 approximately 25 electrons /m 2 and then annealed in situ up to room temperature and outside the HVEM between room temperature and 470 K. During irradiation visible defect clusters were formed only at phi >= 2.5 x 10 24 electrons/m 2 . At smaller doses defect clusters became visible after annealing at 50 K. Between 50 K and 120 K further clusters, mainly dislocation loops on brace111 planes, appeared. Above 120 K, particularly between 160 K and 300 K, some of the dislocation loops became glissile. They glided out of the specimens or agglomerated to larger clusters of frequently complex shapes. As a consequence between 160 K and 300 K the cluster density decreased strongly, whereas the mean cluster size increased monotonously through the entire range of annealing temperatures covered. Contrast analyses between 180 K and 400 K revealed that the great majority of the dislocation loops were of interstitial type. At 470 K a new type of small clusters emerged, presumably of vacancy type. These observations are compared with other studies on electron-irradiated copper and with the current models of radiation damage in metals. (author)

  2. Study by electronic structure calculations of the radiation damage in the UO2 nuclear fuel: behaviour of the point defects and fission gases

    International Nuclear Information System (INIS)

    Vathonne, Emerson

    2014-01-01

    Uranium dioxide (UO 2 ) is worldwide the most widely used fuel in nuclear plants in the world and in particular in pressurized water reactors (PWR). In-pile the fission of uranium nuclei creates fission products and point defects in the fuel. The understanding of the evolution of these radiation damages requires a multi-scale modelling approach of the nuclear fuel, from the scale of the pellet to the atomic scale. We used an electronic structure calculation method based on the density functional theory (DFT) to model radiation damage in UO 2 at the atomic scale. A Hubbard-type Coulomb interaction term is added to the standard DFT formalism to take into account the strong correlations of the 5f electrons in UO 2 . This method is used to study point defects with various charge states and the incorporation and diffusion of krypton in uranium dioxide. This study allowed us to obtain essential data for higher scale models but also to interpret experimental results. In parallel of this study, three ways to improve the state of the art of electronic structure calculations of UO 2 have been explored: the consideration of the spin-orbit coupling neglected in current point defect calculations, the application of functionals allowing one to take into account the non-local interactions such as van der Waals interactions important for rare gases and the use of the Dynamical Mean Field Theory combined to the DFT method in order to take into account the dynamical effects in the 5f electron correlations. (author) [fr

  3. Study of point defects in pure iron by means of electrical resistivity; Etude au moyen de la resistivite electrique des defauts ponctuels dans le fer pur

    Energy Technology Data Exchange (ETDEWEB)

    Minier-Cassayre, C. [Commissariat a l' Energie Atomique, Grenoble (France). Centre d' Etudes Nucleaires

    1965-04-01

    In the first part of this work, after having reviewed the production, observation and the annealing of point defects In metals, we resume the present state of research. In the second part, we explain the techniques we have employed to produce point defects at low temperatures: irradiation, quenching and cold-work; and go on to the study of their migration and annealing. The experimental results obtained for pure iron and for iron containing certain impurities are presented in the third part. In the fourth part we suggest a model which explains the different stages of annealing observed, and their properties. We then compare the energies of interaction between point defects with the values deduced from the theory of elasticity. (author) [French] Dans la premiere partie de cette etude, apres avoir passe en revue la production, l'observation et les modes de guerison des defauts ponctuels dans les metaux, nous exposons l'etat actuel des recherches. La seconde partie est consacree aux techniques que nous avons employees pour produire des defauts ponctuels a basse temperature: irradiations, trempe et ecrouissage puis a l'etude de leur migration et de leur guerison. Les resultats experimentaux obtenus dans le fer pur et le fer contenant certaines impuretes sont presentes dans le troisieme chapitre. Nous proposons ensuite un modele qui explique les differents stades de guerison observes et leurs nombreuses proprietes: nous comparons les energies d'interaction entre defauts ponctuels aux valeurs que l'on pourrait deduire d'un modele elastique. (auteur)

  4. Calculation of point defect concentration in Cu2ZnSnS4: Insights into the high-temperature equilibrium and quenching

    Science.gov (United States)

    Kosyak, V.; Postnikov, A. V.; Scragg, J.; Scarpulla, M. A.; Platzer-Björkman, C.

    2017-07-01

    Herein, we study the native point defect equilibrium in Cu2ZnSnS4 (CZTS) by applying a statistical thermodynamic model. The stable chemical-potential space (SCPS) of CZTS at an elevated temperature was estimated directly, on the basis of deviations from stoichiometry calculated for the different combinations of chemical potential of the components. We show that the SCPS is narrow due to high concentration of (" separators="|VCu --ZnC u + ) complex which is dominant over other complexes and isolated defects. The CZTS was found to have p-type conductivity for both stoichiometric and Cu-poor/Zn-rich composition. It is established that the reason for this is that the majority of donor-like ZnC u + antisites are involved in the formation of (" separators="|VCu --ZnC u + ) complex making CuZ n - dominant and providing p-type conductivity even for Cu-poor/Zn-rich composition. However, our calculation reveals that the hole concentration is almost insensitive to the variation of the chemical composition within the composition region of the single-phase CZTS due to nearly constant concentration of dominant charged defects. The calculations for the full equilibrium and quenching indicate that hole concentration is strongly dependent on the annealing temperature and decreases substantially after the drastic cooling. This means that the precise control of annealing temperature and post-annealing cooling rate are critical for tuning the electrical properties of CZTS.

  5. Influences of point defects on electrical and optical properties of InGaN light-emitting diodes at cryogenic temperature

    Science.gov (United States)

    Tu, Yi; Ruan, Yujiao; Zhu, Lihong; Tu, Qingzhen; Wang, Hongwei; Chen, Jie; Lu, Yijun; Gao, Yulin; Shih, Tien-Mo; Chen, Zhong; Lin, Yue

    2018-04-01

    We investigate the cryogenic external quantum efficiency (EQE) for some InGaN light-emitting diodes with different indium contents. We observe a monotonic decrease in EQE with the increasing forward current before the "U-turn" point, beyond which the thermal effect increases the EQE. We discover positive dependences among the droop rate (χ), differential electrical resistance (Rd), and indium content. Also, χ and Rd of individual green samples shift correspondingly during the aging test, when the Mg ions are activated at high injection density and diffuse into the active region. Considering the fact that both In and Mg ions would introduce point defects (PDs), we proposed a model that reveals the mechanism of interplay between PDs and carriers. PDs serve as both energy traps and non-radiative recombination centers. They attract and confine carriers, leading to an increase in Rd and a decrease in EQE.

  6. Dynamics in discrete two-dimensional nonlinear Schrödinger equations in the presence of point defects

    DEFF Research Database (Denmark)

    Christiansen, Peter Leth; Gaididei, Yuri Borisovich; Rasmussen, Kim

    1996-01-01

    The dynamics of two-dimensional discrete structures is studied in the framework of the generalized two-dimensional discrete nonlinear Schrodinger equation. The nonlinear coupling in the form of the Ablowitz-Ladik nonlinearity and point impurities is taken into account. The stability properties...

  7. Study of clustering point defects under irradiation in dilute iron alloys; Etude de la formation sous irradiation des amas de defauts ponctuels dans les alliages ferritiques faiblement allies

    Energy Technology Data Exchange (ETDEWEB)

    Duong-Hardouin Duparc, T.H.A

    1998-12-31

    In low copper steels for nuclear reactor pressure vessel, point defect clustering plays an important role in hardening. These clusters are very small and invisible by transmission electron microscopy. In order to study the hardening component which results from the clustering of freely migrating point defects, we irradiated in a high voltage electron microscope Fe, the FeCu{sub 0.13%}, FeP{sub 0.015%} and FeN{sub 33ppm} alloys and the complex FeMn{sub 1.5%}Ni{sub 0.8%}Cu{sub 0.13%}P{sub 0.01%} alloy the composition of which is close to the matrix of pressure vessel steel. We studied the nucleation of dislocation loops and their growth velocity. The observations and the analyses have shown that in the complex model alloy, the interstitial dislocation loops are smaller and their density is more important than for the others alloys. The diffusion coefficients of interstitials and vacancies are obtained with the help of a simplified model. The densities of dislocation loops and their growth velocities obtained experimentally are reproduced by means of a cluster dynamics model we have developed. This is achieved self-consistently by using as a first trial the approximated coefficients obtained with the simplified model. The results of calculations have shown that the binding energy of di-interstitials must be very important in the binary iron alloys and only 0.95 eV in iron. Copper, nitrogen and phosphorus stabilize di-interstitials in iron. Finally the distribution of interstitial loops at 290 deg C and at 2.10{sup -9} dpa/s is calculated with the diffusion coefficient of point defects adjusted in FeCu. A distribution of small loops appears which gives an increase of hardening estimated to 10 Hv instead of 33 Hv experimentally observed. This low value can be improved by assuming in agreement with molecular dynamics simulations that a little fraction of di-interstitials is created at 2.5 MeV. (author) 111 refs.

  8. Diffusion of point defects, nucleation of dislocation loops, and effect of hydrogen in hcp-Zr: Ab initio and classical simulations

    Energy Technology Data Exchange (ETDEWEB)

    Christensen, M., E-mail: mchristensen@materialsdesign.com [Materials Design, Inc., 6 First National Place, Angel Fire, NM 87710 (United States); Wolf, W.; Freeman, C.; Wimmer, E. [Materials Design, Inc., 6 First National Place, Angel Fire, NM 87710 (United States); Adamson, R.B. [Zircology Plus, 36848 Montecito Dr, Fremont, CA 94536 (United States); Hallstadius, L. [Westinghouse Electric Sweden AB, SE-721 63 Västerås (Sweden); Cantonwine, P.E. [Global Nuclear Fuel – Americas, P.O. Box 780, M/C F12, Wilmington, NC 28402 (United States); Mader, E.V. [Electric Power Research Institute (EPRI), 3420 Hillview Ave, Palo Alto, CA 94303 (United States)

    2015-05-15

    Highlights: • Simulations of point defects in alpha-Zr using ab initio and forcefield methods. • Anisotropic strain dependent diffusion for interstitials and vacancies. • Explanation of pre-breakaway irradiation growth. • Interstitial nanoclusters cause expansion in 〈a〉, vacancy clusters contract 〈c〉. • H atoms diffuse isotropically, attracted to vacancy defects. - Abstract: Diffusion of point defects, nucleation of dislocation loops, and the associated dimensional changes of pure and H-loaded hcp-Zr have been investigated by a combination of ab initio calculations and classical simulations. Vacancy diffusion is computed to be anisotropic with D{sub vac,basal} = 8.6 × 10{sup −6} e{sup −Q/(RT)} (m{sup 2}/s) and D{sub vac,axial} = 9.9 × 10{sup −6} e{sup −Q/(RT)} (m{sup 2}/s), Q = 69 and 72 kJ/mol for basal and axial diffusion, respectively. At 550 K vacancy diffusion is about twice as fast in the basal plane as in a direction parallel to the c-axis. Diffusion of self-interstitials is found to be considerably faster and anisotropic involving collective atomic motions. At 550 K diffusion occurs predominantly in the a-directions, but this anisotropy diminishes with increasing temperature. Furthermore, the diffusion anisotropy is very dependent on the local strain (c/a ratio). Interstitial H atoms are found to diffuse isotropically with D{sub H} = 1.1 × 10{sup −7} e{sup −42/(RT)} (m{sup 2}/s). These results are consistent with experimental data and other theoretical studies. Molecular dynamics simulations at 550 K with periodic injection of vacancies and self-interstitial atoms reveal the formation of small nanoclusters, which are sufficient to cause a net expansion of the lattice in the a-directions driven by clusters of self-interstitials and a smaller contraction in the c-direction involving nanoclusters of vacancies. This is consistent with and can explain experimental data of irradiation growth. Energy minimizations show that vacancy

  9. Correlation of point defects in CdZnTe with charge transport:application to room-temperature X-ray and gamma-ray detectors. Final Technical Report

    International Nuclear Information System (INIS)

    Giles, Nancy C.

    2003-01-01

    The primary goal of this project has been to characterize and identify point defects (e.g., impurities, vacancies, vacancy-impurity complexes, etc.) in CdZnTe and determine the mechanisms by which these defects influence the carrier μτproducts. Special attention is given to the role of shallow donors, shallow acceptors, and deeper acceptors. There are two experimental focus areas in the project: (1) liquid-helium photoluminescence (PL) and PL excitation spectroscopy are used to identify and characterize donors and acceptors and to determine zinc molar fraction; and (2) electron paramagnetic resonance (EPR) and photoinduced EPR experiments are performed at liquid-helium temperature to identify paramagnetic point defects and to determine the concentration of these defects. Results from the two experimental focus areas are correlated with detector performance parameters (e.g., electron and hole μτ products), crystal growth conditions, and microstructure analyses

  10. Intrinsic disorder in graphene on transition metal dichalcogenide heterostructures

    Science.gov (United States)

    Yankowitz, Matthew; Larentis, Stefano; Kim, Kyounghwam; Xue, Jiamin; McKenzie, Devin; Huang, Shengqiang; Paggen, Marina; Ali, Mazhar; Cava, Robert; Tutuc, Emanuel; Leroy, Brian J.

    2015-03-01

    Recently, semiconducting materials in the transition metal dichalcogenide (TMD) family have gained great popularity for use in novel graphene-based heterostructure devices such as tunneling transistors, highly efficient flexible photovoltaic devices, and nonvolatile memory cells. TMDs have also been explored as alternatives to hexagonal boron nitride (hBN) as substrates for pristine graphene devices. However, their quality has thus far been significantly worse than comparable hBN devices. We examine graphene on numerous TMD substrates (MoS2, WS2, WSe2, MoTe2) with scanning tunneling microscopy and spectroscopy and find that point and line defects intrinsic to all TMD crystals (both of natural and synthetic origin) result in scattering of electrons in graphene. Our findings suggest that the quality of graphene on TMD heterostructures is limited by the intrinsic crystalline quality of the TMDs.

  11. Composição volátil dos defeitos intrínsecos do café por CG/EM-headspace Volatile composition of intrinsic defective coffee beans by GC/MS-headspace

    Directory of Open Access Journals (Sweden)

    Raquel D. C. C. Bandeira

    2009-01-01

    Full Text Available About 20% of Brazilian raw coffee production is considered inappropriate for exportation. Consequently, these beans are incorporated to good quality beans in the Brazilian market. This by-product of coffee industry is called PVA due to the presence of black (P, green (V and sour (A defective beans which are known to contribute considerably for cup quality decrease. Data on the volatile composition of Brazilian defective coffee beans are scarce. In this study, we evaluated the volatile composition of immature, black-immature, black defective beans and PVA compared to good quality beans. Potential defective beans markers were identified.

  12. Research Update: Point defects in CdTe{sub x}Se{sub 1−x} crystals grown from a Te-rich solution for applications in detecting radiation

    Energy Technology Data Exchange (ETDEWEB)

    Gul, R.; Roy, U. N.; Bolotnikov, A. E.; Camarda, G. S.; Cui, Y.; Hossain, A.; Yang, G.; James, R. B. [Brookhaven National Laboratory, Upton, New York 11973 (United States); Lee, W. [Korea University, Seoul 136-701 (Korea, Republic of); Cui, Y.; Burger, A. [Fisk University, Nashville, Tennessee 37208 (United States)

    2015-04-01

    We investigated cadmium telluride selenide (CdTeSe) crystals, newly grown by the Traveling Heater Method (THM), for the presence and abundance of point defects. Current Deep Level Transient spectroscopy (I-DLTS) was used to determine the energies of the traps, their capture cross sections, and densities. The bias across the detectors was varied from 1 to 30 V. Four types of point defects were identified, ranging from 10 meV to 0.35 eV. Two dominant traps at energies of 0.18 eV and 0.14 eV were studied in depth. Cd vacancies are found at lower concentrations than other point defects present in the material.

  13. Point Defect Calculations in Tungsten

    National Research Council Canada - National Science Library

    Danilowicz, Ronald

    1968-01-01

    .... The vacancy migration energy for tungsten was calculated. The calculated value of 1.73 electron volts, together with experimental data, suggests that vacancies migrate in stage III recovery in tungsten...

  14. Diffusion in Intrinsic and Highly Doped III-V Semiconductors

    CERN Multimedia

    Stolwijk, N

    2002-01-01

    %title\\\\ \\\\Diffusion plays a key role in the fabrication of semiconductor devices. The diffusion of atoms in crystals is mediated by intrinsic point defects. Investigations of the diffusion behaviour of self- and solute atoms on the Ga sublattice of gallium arsenide led to the conclusion that in intrinsic and n-type material charged Ga vacancies are involved in diffusion processes whereas in p-type material diffusion if governed by charged Ga self-interstitials. Concerning the As sublattice of gallium arsenide there is a severe lack of reliable diffusion data. The few available literature data on intrinsic GaAs are not mutually consistent. A systematic study of the doping dependence of diffusion is completely missing. The most basic diffusion process - self-diffusion of As and its temperature and doping dependence - is practically not known. For GaP a similar statement holds.\\\\ \\\\The aim of the present project is to perform a systematic diffusion study of As diffusion in intrinsic and doped GaAs and in GaP. P...

  15. Passivity of AISI 321 stainless steel in 0.5 M H2SO4 solution studied by Mott–Schottky analysis in conjunction with the point defect model

    Directory of Open Access Journals (Sweden)

    A. Fattah-alhosseini

    2016-11-01

    Full Text Available The passivity of AISI 321 stainless steel in 0.5 M H2SO4 solution, in the steady-state condition, has been explored using electrochemical impedance spectroscopy (EIS and Mott–Schottky analysis. Based on the Mott–Schottky analysis in conjunction with the point defect model (PDM, it was shown that the calculated donor density decreases exponentially with increasing passive film formation potential. The thickness of the passive film was increased linearly with the formation potential. These observations were consistent with the predictions of the PDM, noting that the point defects within the passive film are metal interstitials, oxygen vacancies, or both.

  16. Non-thermodynamic approach to including bombardment-induced post-cascade redistribution of point defects in dynamic Monte Carlo code

    CERN Document Server

    Ignatova, V A; Katardjiev, I V

    2003-01-01

    The redistribution of the elements as a result of atomic relocations produced by the ions and the recoils due to the ballistic and transport processes is investigated by making use of a dynamic Monte Carlo code. Phenomena, such as radiation-enhanced diffusion (RED) and bombardment-induced segregation (BIS) triggered by the ion bombardment may also contribute to the migration of atoms within the target. In order to include both RED and BIS in the code, we suggest an approach which is considered as an extension of the binary collision approximation, i.e. it takes place 'simultaneously' with the cascade and acts as a correction to the particle redistribution for low energies. Both RED and BIS models are based on the common approach to treat the transport processes as a result of a random migration of point defects (vacancies and interstitials) according to a probability given by a pre-defined Gaussian. The models are tested and the influence of the diffusion and segregation is illustrated in the cases of 12 keV ...

  17. Molecular Dynamics in the Crystalline Regions of Poly(ethylene oxide) Containing a Well-Defined Point Defect in the Middle of the Polymer Chain.

    Science.gov (United States)

    Golitsyn, Yury; Pulst, Martin; Kressler, Jörg; Reichert, Detlef

    2017-05-04

    The chain mobility in crystals of a homopolymer of poly(ethylene oxide) (PEO) with 22 monomer units (PEO 22 ) is compared with that of a PEO having the identical number of monomer units but additionally a 1,4-disubstituted 1,2,3-triazole (TR) point defect in the middle of the chain (PEO 11 -TR-PEO 11 ). In crystals of PEO 22 , the characteristic α c -relaxation (helix jumps) is detected and the activation energy of this process is calculated from the pure crystalline 1 H FIDs to 67 kJ/mol. PEO 11 -TR-PEO 11 exhibits a more complex behavior, i.e. a transition into the high temperature phase HTPh is noticed during heating in the temperature range between -5 and 10 °C which is attributed to the incorporation of the TR ring into the crystalline lamellae. The crystal mobility of the low temperature phase LTPh of PEO 11 -TR-PEO 11 is in good agreement with PEO 22 since helical jump motions could also be detected by analysis of the 1 H FIDs and the corresponding values of their second moments M 2 . In contrast, the high temperature phase of PEO 11 -TR-PEO 11 shows a completely different behavior of the crystal mobility. The crystalline PEO chains are rigid in this HTPh on the time scale of both, the 1 H time-domain technique and in 13 C MAS CODEX NMR spectroscopy, i.e. the α c -mobility of PEO in the HTPh of PEO 11 -TR-PEO 11 is completely suppressed and the PEO 11 chains are converted into a crystal-fixed polymer due to the incorporation of the TR rings into the crystal structure. However, the TR defect of PEO 11 -TR-PEO 11 shows in the HTPh characteristic π-flip motions with an Arrhenius type activation energy of 223 kJ/mol measured by dielectric relaxation spectroscopy. This motion cannot be observed by corresponding 13 C MAS CODEX NMR measurements due to an interfering spin-dynamic effect.

  18. Reading: Intrinsic versus Extrinsic Motivation.

    Science.gov (United States)

    Ediger, Marlow

    Much debate centers on motivating student in reading achievement. Should students feel motivated from within (intrinsic motivation), or is it better to have extrinsic motivation whereby external stimuli are used to help learners achieve optimally in reading? This paper aims to analyze the two points of view about motivating students in reading…

  19. An Intrinsic Coordinate System for Fingerprint Matching

    NARCIS (Netherlands)

    Bazen, A.M.; Gerez, Sabih H.; Bigun, J.; Smeraldi, F.

    2001-01-01

    In this paper, an intrinsic coordinate system is proposed for fingerprints. First the fingerprint is partitioned in regular regions, which are regions that contain no singular points. In each regular region, the intrinsic coordinate system is defined by the directional field. When using the

  20. Impact of Mg content on native point defects in MgxZn1−xO (0 ≤ x ≤ 0.56

    Directory of Open Access Journals (Sweden)

    J. Perkins

    2015-06-01

    Full Text Available We used depth-resolved cathodoluminescence spectroscopy and surface photovoltage spectroscopy to measure the densities, energy levels, and spatial distributions of zinc/magnesium cation and oxygen vacancies in isostructural, single-phase, non-polar MgxZn1−xO alloys over a wide (0 ≤ x ≤ 0.56 range. Within this wide range, both defect types exhibit strong Mg content-dependent surface segregation and pronounced bulk density minima corresponding to unit cell volume minima, which can inhibit defect formation due to electrostatic repulsion. Mg in ZnO significantly reduces native defect densities and their non-polar surface segregation, both major factors in carrier transport and doping of these oxide semiconductors.

  1. Impact of Mg content on native point defects in Mg{sub x}Zn{sub 1−x}O (0 ≤ x ≤ 0.56)

    Energy Technology Data Exchange (ETDEWEB)

    Perkins, J.; Foster, G. M. [Department of Physics, The Ohio State University, 191 West Woodruff Ave., Columbus, Ohio 43210 (United States); Myer, M.; Mehra, S. [Columbus School for Girls, 56 S. Columbia Ave., Columbus, Ohio 43209 (United States); Chauveau, J. M. [Centre de Recherche sur l’Hetero-Epitaxie et ses Applications, Centre National de la Recherche Scientifique (CRHEA-CNRS), Rue B. Gregory, F-06560 Valbonne Sophia Antipolis (France); University of Nice Sophia Antipolis, Parc Valrose, F-06102 Nice Cedex 2 (France); Hierro, A. [Dpto. Ingeniería Electrónica and ISOM, Universidad Politécnica de Madrid, Ciudad Universitaria s/n, 28040 Madrid (Spain); Redondo-Cubero, A. [Dpto. Física Aplicada y Centro de Micro-Análisis de Materiales, Universidad Autónoma de Madrid, 28049 Madrid (Spain); Windl, W. [Department of Materials Science and Engineering, The Ohio State University, 2041 College Road N., Columbus, Ohio 43210 (United States); Brillson, L. J., E-mail: brillson.1@osu.edu [Department of Physics, The Ohio State University, 191 West Woodruff Ave., Columbus, Ohio 43210 (United States); Department of Electrical and Computer Engineering, The Ohio State University, 2015 Neil Avenue, Columbus, Ohio 43210-1272 (United States); Center for Materials Research, The Ohio State University, Columbus, Ohio 43210 (United States)

    2015-06-01

    We used depth-resolved cathodoluminescence spectroscopy and surface photovoltage spectroscopy to measure the densities, energy levels, and spatial distributions of zinc/magnesium cation and oxygen vacancies in isostructural, single-phase, non-polar Mg{sub x}Zn{sub 1−x}O alloys over a wide (0 ≤ x ≤ 0.56) range. Within this wide range, both defect types exhibit strong Mg content-dependent surface segregation and pronounced bulk density minima corresponding to unit cell volume minima, which can inhibit defect formation due to electrostatic repulsion. Mg in ZnO significantly reduces native defect densities and their non-polar surface segregation, both major factors in carrier transport and doping of these oxide semiconductors.

  2. Diffusive, Structural, Optical, and Electrical Properties of Defects in Semiconductors

    CERN Multimedia

    Wagner, F E

    2002-01-01

    Electronic properties of semiconductors are extremely sensitive to defects and impurities that have localized electronic states with energy levels in the band gap of the semiconductor. Spectroscopic techniques like photoluminescence (PL), deep level transient spectroscopy (DLTS), or Hall effect, that are able to detect and characterize band gap states do not reveal direct information about their microscopic origin. To overcome this chemical "blindness", the present approach is to use radioactive isotopes as a tracer. Moreover, the recoil energies involved in $\\beta$ and $\\gamma$-decays can be used to create intrinsic isolated point defects (interstitials, vacancies) in a controlled way. A microscopic insight into the structure and the thermodynamic properties of complexes formed by interacting defects can be gained by detecting the hyperfine interaction between the nuclear moments of radioactive dopants and the electromagnetic fields present at the site of the radioactive nucleus. The understanding and the co...

  3. Defects in semiconductors

    CERN Document Server

    Romano, Lucia; Jagadish, Chennupati

    2015-01-01

    This volume, number 91 in the Semiconductor and Semimetals series, focuses on defects in semiconductors. Defects in semiconductors help to explain several phenomena, from diffusion to getter, and to draw theories on materials' behavior in response to electrical or mechanical fields. The volume includes chapters focusing specifically on electron and proton irradiation of silicon, point defects in zinc oxide and gallium nitride, ion implantation defects and shallow junctions in silicon and germanium, and much more. It will help support students and scientists in their experimental and theoret

  4. Point defects in Cu 2 ZnSnSe 4 (CZTSe): Resonant X-ray diffraction study of the low-temperature order/disorder transition: Point defects in Cu 2 ZnSnSe 4 (CZTSe)

    Energy Technology Data Exchange (ETDEWEB)

    Schelhas, L. T. [Applied Energy Programs, SLAC National Accelerator Laboratory, Menlo Park California 94025 USA; Stone, K. H. [Stanford Synchrotron Radiation Lightsource, SLAC National Accelerator Laboratory, Menlo Park California 94025 USA; Harvey, S. P. [National Renewable Energy Laboratory, Golden Colorado 80401 USA; Zakhidov, D. [Materials Science and Engineering Department, Stanford University, Stanford CA 94305 USA; Salleo, A. [Materials Science and Engineering Department, Stanford University, Stanford CA 94305 USA; Teeter, G. [National Renewable Energy Laboratory, Golden Colorado 80401 USA; Repins, I. L. [National Renewable Energy Laboratory, Golden Colorado 80401 USA; Toney, M. F. [Applied Energy Programs, SLAC National Accelerator Laboratory, Menlo Park California 94025 USA; Stanford Synchrotron Radiation Lightsource, SLAC National Accelerator Laboratory, Menlo Park California 94025 USA

    2017-07-25

    The interest in Cu2ZnSn(S,Se)4 (CZTS) for photovoltaic applications is motivated by similarities to Cu(In,Ga)Se2 while being comprised of non-toxic and earth abundant elements. However, CZTS suffers from a Voc deficit, where the Voc is much lower than expected based on the band gap, which may be the result of a high concentration of point-defects in the CZTS lattice. Recently, reports have observed a low-temperature order/disorder transition by Raman and optical spectroscopies in CZTS films and is reported to describe the ordering of Cu and Zn atoms in the CZTS crystal structure. To directly determine the level of Cu/Zn ordering, we have used resonant-XRD, a site, and element specific probe of long range order. We used CZTSe films annealed just below and quenched from just above the transition temperature; based on previous work, the Cu and Zn should be ordered and highly disordered, respectively. Our data show that there is some Cu/Zn ordering near the low temperature transition but significantly less than high chemical order expected from Raman. To understand both our resonant-XRD results and the Raman results, we present a structural model that involves antiphase domain boundaries and accommodates the excess Zn within the CZTS lattice.

  5. Birth Defects

    Science.gov (United States)

    A birth defect is a problem that happens while a baby is developing in the mother's body. Most birth defects happen during the first 3 months of ... in the United States is born with a birth defect. A birth defect may affect how the ...

  6. Prévision de l'épaisseur du film passif d'un acier inoxydable 316L soumis au fretting corrosion grâce au Point Defect Model, PDM Predicting the steady state thickness of passive films with the Point Defect Model in fretting corrosion experiments

    Directory of Open Access Journals (Sweden)

    Geringer Jean

    2013-11-01

    Full Text Available Les implants orthopédiques de hanche ont une durée de vie d'environ 15 ans. Par exemple, la tige fémorale d'un tel implant peut être réalisée en acier inoxydable 316L ou 316LN. Le fretting corrosion, frottement sous petits déplacements, peut se produire pendant la marche humaine en raison des chargements répétés entre le métal de la prothèse et l'os. Plusieurs investigations expérimentales du fretting corrosion ont été entreprises. Cette couche passive de quelques nanomètres, à température ambiante, est le point clef sur lequel repose le développement de notre civilisation, selon certains auteurs. Ce travail vise à prédire les épaisseurs de cette couche passive de l'acier inoxydable soumis au fretting corrosion, avec une attention spécifique sur le rôle des protéines. Le modèle utilisé est basé sur le Point Defect Model, PDM (à une échelle microscopique et une amélioration de ce modèle en prenant en compte le processus de frottement sous petits débattements. L'algorithme génétique a été utilisé pour optimiser la convergence du problème. Les résultats les plus importants sont, comme démontré avec les essais expérimentaux, que l'albumine, la protéine étudiée, empêche les dégradations de l'acier inoxydable aux plus faibles concentrations d'ions chlorure ; ensuite, aux plus fortes concentrations de chlorures, un temps d'incubation est nécessaire pour détruire le film passif. Some implants have approximately a lifetime of 15 years. The femoral stem, for example, should be made of 316L/316LN stainless steel. Fretting corrosion, friction under small displacements, should occur during human gait, due to repeated loadings and un-loadings, between stainless steel and bone for instance. Some experimental investigations of fretting corrosion have been practiced. As well known, metallic alloys and especially stainless steels are covered with a passive film that prevents from the corrosion and degradation

  7. Crystalline quality of the trigonal piezoelectric materials and effects of the extended defects.

    Science.gov (United States)

    Capelle, Bernard; Detaint, Jacques; Epelboin, Yves

    2012-05-01

    Many frequently used or promising piezoelectric materials belong to crystal classes 32 or 3m. Among them are α quartz and its crystallographic analogs (AlPO(4), GaPO(4), α-GeO(2), etc.), the numerous materials of the langasite (La-(3)Ga(5)SiO,sub>14) family and also lithium tantalate (LiTaO,sub>3) and lithium niobate (LiNbO 3). In this paper we study the present state of the art for these materials, indicate their principal point and extended defects, and present methods to reduce the dislocation density. Large concentrations of intrinsic point defects often exist in crystal grown at very high temperatures. The point defects (intrinsic or related to impurities) modify the constants and can increase the acoustic losses. This is the case for the alkali ions and the OH that induce severe losses in different temperature intervals. The extended defects also affect the performances of the piezoelectric devices. Some, such as twins, ferroelectric domains, or large solid or liquid inclusions, have very detrimental effects. Dislocations, growth bands, and planar defects are more difficult to avoid and affect the devices in a more subtle manner. In quartz and its analogs, dislocations seem to increase the nonlinear elastic effects and have a collective effect on the vibration modes, particularly in energy trapping resonators. Growth bands and stacking faults also produce similar effects.

  8. Investigation of 3C-SiC/SiO2 interfacial point defects from ab initio g-tensor calculations and electron paramagnetic resonance measurements

    Science.gov (United States)

    Nugraha, T. A.; Rohrmueller, M.; Gerstmann, U.; Greulich-Weber, S.; Stellhorn, A.; Cantin, J. L.; von Bardeleben, J.; Schmidt, W. G.; Wippermann, S.

    SiC is widely used in high-power, high-frequency electronic devices. Recently, it has also been employed as a building block in nanocomposites used as light absorbers in solar energy conversion devices. Analogous to Si, SiC features SiO2 as native oxide that can be used for passivation and insulating layers. However, a significant number of defect states are reported to form at SiC/SiO2 interfaces, limiting mobility and increasing recombination of free charge carriers. We investigated the growth of oxide on different 3C-SiC surfaces from first principles. Carbon antisite Csi defects are found to be strongly stabilized in particular at the interface, because carbon changes its hybridization from sp3 in the SiC-bulk to sp2 at the interface, creating a dangling bond inside a porous region of the SiO2 passivating layer. Combining ab initio g-tensor calculations and electron paramagnetic resonance (EPR) measurements, we show that Csi defects explain the measured EPR signatures, while the hyperfine structure allows to obtain local structural information of the oxide layer. Financial support from BMBF NanoMatFutur Grant 13N12972 and DFG priority program SPP-1601 is gratefully acknowledged.

  9. Tungsten Bronze Barium Neodymium Titanate (Ba(6-3n)Nd(8+2n)Ti(18)O(54)): An Intrinsic Nanostructured Material and Its Defect Distribution.

    Science.gov (United States)

    Azough, Feridoon; Cernik, Robert Joseph; Schaffer, Bernhard; Kepaptsoglou, Demie; Ramasse, Quentin Mathieu; Bigatti, Marco; Ali, Amir; MacLaren, Ian; Barthel, Juri; Molinari, Marco; Baran, Jakub Dominik; Parker, Stephen Charles; Freer, Robert

    2016-04-04

    We investigated the structure of the tungsten bronze barium neodymium titanates Ba(6-3n)Nd(8+2n)Ti(18)O(54), which are exploited as microwave dielectric ceramics. They form a complex nanostructure, which resembles a nanofilm with stacking layers of ∼12 Å thickness. The synthesized samples of Ba(6-3n)Nd(8+2n)Ti(18)O(54) (n = 0, 0.3, 0.4, 0.5) are characterized by pentagonal and tetragonal columns, where the A cations are distributed in three symmetrically inequivalent sites. Synchrotron X-ray diffraction and electron energy loss spectroscopy allowed for quantitative analysis of the site occupancy, which determines the defect distribution. This is corroborated by density functional theory calculations. Pentagonal columns are dominated by Ba, and tetragonal columns are dominated by Nd, although specific Nd sites exhibit significant concentrations of Ba. The data indicated significant elongation of the Ba columns in the pentagonal positions and of the Nd columns in tetragonal positions involving a zigzag arrangement of atoms along the b lattice direction. We found that the preferred Ba substitution occurs at Nd[3]/[4] followed by Nd[2] and Nd[1]/[5] sites, which is significantly different to that proposed in earlier studies. Our results on the Ba(6-3n)Nd(8+2n)Ti(18)O(54) "perovskite" superstructure and its defect distribution are particularly valuable in those applications where the optimization of material properties of oxides is imperative; these include not only microwave ceramics but also thermoelectric materials, where the nanostructure and the distribution of the dopants will reduce the thermal conductivity.

  10. Fast thermal annealing of implantation defects in silicon. Solid phase epitaxy and residual imperfection recovery

    International Nuclear Information System (INIS)

    Adekoya, O.A.

    1987-06-01

    Basic processes ruling the crystal reconstitution in solid phase during fast thermal annealing are studied; the role of electronic and thermodynamic effects at the interface is precised, following the implantations of a donor element (p + ), an acceptor element (B + ) and an intrinsic element (Ge + ). Then, after recrystallization, the electric role of residual point defects is shown together with the possibility of total recovery and an important electric activation of the doping [fr

  11. First-principles investigation of neutron-irradiation-induced point defects in B4C, a neutron absorber for sodium-cooled fast nuclear reactors

    Science.gov (United States)

    You, Yan; Yoshida, Katsumi; Yano, Toyohiko

    2018-05-01

    Boron carbide (B4C) is a leading candidate neutron absorber material for sodium-cooled fast nuclear reactors owing to its excellent neutron-capture capability. The formation and migration energies of the neutron-irradiation-induced defects, including vacancies, neutron-capture reaction products, and knocked-out atoms were studied by density functional theory calculations. The vacancy-type defects tend to migrate to the C–B–C chains of B4C, which indicates that the icosahedral cage structures of B4C have strong resistance to neutron irradiation. We found that lithium and helium atoms had significantly lower migration barriers along the rhombohedral (111) plane of B4C than perpendicular to this plane. This implies that the helium and lithium interstitials tended to follow a two-dimensional diffusion regime in B4C at low temperatures which explains the formation of flat disk like helium bubbles experimentally observed in B4C pellets after neutron irradiation. The knocked-out atoms are considered to be annihilated by the recombination of the close pairs of self-interstitials and vacancies.

  12. Local order dynamics: its application to the study of atomic mobility, of point defects in crystalline alloys, and of structural relaxation in amorphous alloys

    International Nuclear Information System (INIS)

    Balanzat, Emmanuel

    1983-01-01

    This research thesis addressed the study of the atomic mobility mechanism and of the atom movement dynamics in the case of crystalline alloys and of amorphous alloys. The first part is based on a previous study performed on an α-Cu 70 -Zn 30 crystalline alloy, and addresses the case of an α-Au 70 -Ni 30 alloy. The specificity of this case relies in the fact that the considered solid solution is metastable and susceptible to de-mixing in the considered temperature range. This case of off-equilibrium crystalline alloy is at the crossroad between steady crystalline alloys and metallic glasses which are studied in the second part. The third part addresses the irradiation of metallic amorphous alloys by fast particles (neutrons or electrons). The author tried to characterise atomic defects induced by irradiation and to compare them with pre-existing ones. He studied how these defects may change atomic mobility, and, more generally, to which extent the impact of energetic particles could modify local order status

  13. Linear-scaling density-functional simulations of charged point defects in Al2O3 using hierarchical sparse matrix algebra.

    Science.gov (United States)

    Hine, N D M; Haynes, P D; Mostofi, A A; Payne, M C

    2010-09-21

    We present calculations of formation energies of defects in an ionic solid (Al(2)O(3)) extrapolated to the dilute limit, corresponding to a simulation cell of infinite size. The large-scale calculations required for this extrapolation are enabled by developments in the approach to parallel sparse matrix algebra operations, which are central to linear-scaling density-functional theory calculations. The computational cost of manipulating sparse matrices, whose sizes are determined by the large number of basis functions present, is greatly improved with this new approach. We present details of the sparse algebra scheme implemented in the ONETEP code using hierarchical sparsity patterns, and demonstrate its use in calculations on a wide range of systems, involving thousands of atoms on hundreds to thousands of parallel processes.

  14. Accumulation patterns of proper point defects in thermo-regulating coatings based on ZnO for space vehicles under electron irradiation

    International Nuclear Information System (INIS)

    Mikhajlov, M.M.; Sharafutdinova, V.V.

    1998-01-01

    The expansion of the band of the induced absorption of zinc oxide powders and thermo-regulating coatings based on ZnO for space vehicles is carried out after the 30 keV electron irradiation. Singularities of the growth of the intensity of individual components as a function of the accelerated electron flow are studied. It is found that power and exponential dependences with one or two components are characteristic for different color centers and different thermo-regulating coatings. The kinetics of the accumulation of free electrons is characterized by the maximum value of the electron flows at which the generation of color centers on pre-radiation defects is realized by the radiolysis of the pigment lattice

  15. Defect-impurity complex induced long-range ferromagnetism in GaN nanowires

    KAUST Repository

    Assa Aravindh, S

    2015-12-14

    Present work investigates the structural, electronic and magnetic properties of Gd doped wurtzite GaN nanowires (NWs) oriented along the [0001] direction in presence of intrinsic defects by employing the GGA + U approximation. We find that Ga vacancy (VGa) exhibits lower formation energy compared to N vacancy. Further stabilization of point defects occurs due to the presence of Gd. The strength of ferromagnetism (FM) increases by additional positive charge induced by the VGa. Electronic structure analysis shows that VGa introduces defect levels in the band gap leading to ferromagnetic coupling due to the hybridization of the p states of the Ga and N atoms with the Gd d and f states. Ferromagnetic exchange coupling energy of 76.4 meV is obtained in presence of Gd-VGa complex; hence, the FM is largely determined by the cation vacancy-rare earth complex defects in GaN NWs.

  16. Defects and oxidation resilience in InSe

    Science.gov (United States)

    Xiao, K. J.; Carvalho, A.; Castro Neto, A. H.

    2017-08-01

    We use density functional theory to study intrinsic defects and oxygen related defects in indium selenide. We find that InSe is prone to oxidation, but however not reacting with oxygen as strongly as phosphorene. The dominant intrinsic defects in In-rich material are the In interstitial, a shallow donor, and the Se vacancy, which introduces deep traps. The latter can be passivated by oxygen, which is isoelectronic with Se. The dominant intrinsic defects in Se-rich material have comparatively higher formation energies.

  17. A Rotational Crofton Formula for Flagged Intrinsic Volumes of Sets of Positive Reach

    DEFF Research Database (Denmark)

    Auneau, Jeremy Michel

    A rotational Crofton formula is derived relating the flagged intrinsic volumes of a compact set of positive reach with the flagged intrinsic volumes measured on sections passing through a fixed point. In particular cases, the flagged intrinsic volumes defined in the present paper are identical...... to the classical intrinsic volumes. The tight connection between our main result and other recent rotational integral formulae involving intrinsic volumes is pointed out....

  18. Influence of point defects on dosimetric properties and sintering capability of aluminia {alpha}; Influence des defauts ponctuels sur les proprietes dosimetriques et sur l'aptitude au frittage de l'alumine {alpha}

    Energy Technology Data Exchange (ETDEWEB)

    Papin, Eric [Ecole Nationale Superieure des Mines, 42 - Saint-Etienne (France)

    1997-12-11

    This work was devoted to the study of the influence of synthesis conditions on the thermoluminescence of aluminia {alpha} for use in ionizing radiation dosimetry. Powders are synthesized by heat treatment of pure aluminia {gamma} or doped by impregnation technique. The studied parameters are the thermal cycle, the gas atmosphere of the furnace and the nature of the dopants (Mg{sup 2+}, Cr{sup 3+}, Th{sup 4+}, Fe{sup 3+}/Fe{sup 2+}). The thermoluminescence (TL) is connected with the presence of point defects. This technique consists in measuring the intensity of light emitted by a previously irradiated solid. Three TL peaks were observed. A peak around - 40 deg. C allows making evident the magnesium impurities and the oxygen vacations. The evolution of the intensity of the two peaks at 190 deg. C and 360 deg. C, is studied as a function of the oxygen partial pressure of the heat treatment and of the Mg{sup 2+}, Cr{sup 3+} and Th{sup 4+} dopant concentrations. These investigations have permitted identifying the defects implied in the luminescence process of these two peaks, i.e. the aluminium vacations and the Cr{sup 3+} ions substituted to Al{sup 3+}. Thus aluminia powders having a high sensitivity to ionizing radiations (X rays, UV and {gamma} radiations) have been synthesized. Utilization in dosimetry of the peaks at 190 deg. C and 360 deg. C is suggested. The reactivity of non-doped powders containing different types of point defects was analyzed by dilatometry. Thus, the influence of the atmosphere of powder preparation upon the sintering behaviour was made evident. The differences between the removal velocities are correlated with the variations in the aluminium vacancy concentrations. These results suppose that the limiting stage in sintering these powders is the Al{sup 3+} ion diffusion.

  19. A model of intrinsic symmetry breaking

    International Nuclear Information System (INIS)

    Ge, Li; Li, Sheng; George, Thomas F.; Sun, Xin

    2013-01-01

    Different from the symmetry breaking associated with a phase transition, which occurs when the controlling parameter is manipulated across a critical point, the symmetry breaking presented in this Letter does not need parameter manipulation. Instead, the system itself suddenly undergoes symmetry breaking at a certain time during its evolution, which is intrinsic symmetry breaking. Through a polymer model, it is revealed that the origin of the intrinsic symmetry breaking is nonlinearity, which produces instability at the instance when the evolution crosses an inflexion point, where this instability breaks the original symmetry

  20. Charged Semiconductor Defects Structure, Thermodynamics and Diffusion

    CERN Document Server

    Seebauer, Edmund G

    2009-01-01

    The technologically useful properties of a solid often depend upon the types and concentrations of the defects it contains. Not surprisingly, defects in semiconductors have been studied for many years, in many cases with a view towards controlling their behavior through various forms of "defect engineering." For example, in the bulk, charging significantly affects the total concentration of defects that are available to mediate phenomena such as solid-state diffusion. Surface defects play an important role in mediating surface mass transport during high temperature processing steps such as epitaxial film deposition, diffusional smoothing in reflow, and nanostructure formation in memory device fabrication. Charged Semiconductor Defects details the current state of knowledge regarding the properties of the ionized defects that can affect the behavior of advanced transistors, photo-active devices, catalysts, and sensors. Features: Group IV, III-V, and oxide semiconductors; Intrinsic and extrinsic defects; and, P...

  1. Defect Structure of Localized Excitons in a WSe2 Monolayer

    KAUST Repository

    Zhang, Shuai

    2017-07-26

    The atomic and electronic structure of intrinsic defects in a WSe2 monolayer grown on graphite was revealed by low temperature scanning tunneling microscopy and spectroscopy. Instead of chalcogen vacancies that prevail in other transition metal dichalcogenide materials, intrinsic defects in WSe2 arise surprisingly from single tungsten vacancies, leading to the hole (p-type) doping. Furthermore, we found these defects to dominate the excitonic emission of the WSe2 monolayer at low temperature. Our work provided the first atomic-scale understanding of defect excitons and paved the way toward deciphering the defect structure of single quantum emitters previously discovered in the WSe2 monolayer.

  2. Contribution to the study of point defects in uranium {alpha}; Contribution a l'etude des defauts ponctuels dans l'uranium {alpha}

    Energy Technology Data Exchange (ETDEWEB)

    Jousset, J. [Commissariat a l' Energie Atomique, Fontenay-aux-Roses (France). Centre d' Etudes Nucleaires

    1967-07-01

    Uranium quenched from temperatures as low as 100 K shows an important increase in resistivity which disappears after annealing between 4.2 K and 41 K. This phenomenon is explained by a cold-work of the metal due to the rapid traversing of the temperature region where the lattice parameters exhibit an important and anisotropic increase. The annealing occurs in two stages (4.2 K - 26 K - 41 K). Purity of samples has an influence on the phenomenon. Model proposed is confirmed by the comparison with some experiments of annealing of defects created by irradiation of uranium at very low temperatures. Vacancies have been quenched in the metal from temperatures around 650 C (limit of the {alpha} phase). The formation energy so found is E{sub F} = 0. 5 {+-} 0.15 eV. The annealing out of the induced resistivity happens in two stages (300-390; 420-560 C). (authors) [French] La trempe de l'uranium dans l'helium liquide depuis des temperatures aussi basses que 100 K entraine une augmentation de resistivite qui disparait par recuit entre 4.2 K et 41 K. Ce phenomene est interprete comme un ecrouissage du metal provoque par la traversee rapide d'une region ou les parametres cristallins varient beaucoup et de facon anisotrope. Le recuit se fait en deux stades (4.2 K - 26 K - 41 K). La purete des echantillons a une influence sur le phenomene. Le modele propose a ete verifie par comparaison avec des experiences de recuit de defauts crees par irradiation de l'uranium a tres basse temperature. Des lacunes ont ete retenues a l'etat metastable par trempe du metal depuis des temperatures voisines de 650 C (limite de la phase {alpha}). L'energie de formation trouvee est E{sub F} = 0.5 {+-} 0.15 eV. La guerison se fait en deux stades (300-390 C; 420-560 C). (auteurs)

  3. Intrinsic contractures of the hand.

    Science.gov (United States)

    Paksima, Nader; Besh, Basil R

    2012-02-01

    Contractures of the intrinsic muscles of the fingers disrupt the delicate and complex balance of intrinsic and extrinsic muscles, which allows the hand to be so versatile and functional. The loss of muscle function primarily affects the interphalangeal joints but also may affect etacarpophalangeal joints. The resulting clinical picture is often termed, intrinsic contracture or intrinsic-plus hand. Disruption of the balance between intrinsic and extrinsic muscles has many causes and may be secondary to changes within the intrinsic musculature or the tendon unit. This article reviews diagnosis, etiology, and treatment algorithms in the management of intrinsic contractures of the fingers. Copyright © 2012 Elsevier Inc. All rights reserved.

  4. Predicting Intrinsic Motivation

    Science.gov (United States)

    Martens, Rob; Kirschner, Paul A.

    2004-01-01

    Intrinsic motivation can be predicted from participants' perceptions of the social environment and the task environment (Ryan & Deci, 2000)in terms of control, relatedness and competence. To determine the degree of independence of these factors 251 students in higher vocational education (physiotherapy and hotel management) indicated the…

  5. A rotational integral formula for intrinsic volumes

    DEFF Research Database (Denmark)

    Jensen, Eva Bjørn Vedel; Rataj, J.

    2008-01-01

    A rotational version of the famous Crofton formula is derived. The motivation for deriving the formula comes from local stereology, a new branch of stereology based on sections through fixed reference points. The formula shows how rotational averages of intrinsic volumes measured on sections...

  6. Crystallite-conjugation regions in polycrystalline transition and noble metals. 1. Composition and properties of point defects in the cores of crystallite-conjugation regions in polycrystalline Cr, Ta and W

    International Nuclear Information System (INIS)

    Klotsman, S.M.; Kajgorodov, V.N.; Ermakov, A.V.; Rudenko, V.K.

    2004-01-01

    With the use of available results of theoretical investigations on structure and properties of crystallite conjugation regions (CCR) the types and relaxation volumes of point defects arising in a core of the CCR of polycrystalline Ta, W and Cr after vacuum annealing (10 -6 - 10 -5 torr) are determined. Temperature dependences are studied for isomer shifts δ 1 and δ 2 of -1 and -2 components of emission spectra of NGR-irradiation 57 Co( 57 Fe) atomic probes localized in a core of the CCR and in adjacent zones of the lattice of polycrystalline solid solutions of O(Ta), O(W) and O(Cr). A comparison of the dependences obtained is carried and the specific features observed are explained for O(Cr) [ru

  7. Low-resistivity m-plane freestanding GaN substrate with very low point-defect concentrations grown by hydride vapor phase epitaxy on a GaN seed crystal synthesized by the ammonothermal method

    Science.gov (United States)

    Kojima, Kazunobu; Tsukada, Yusuke; Furukawa, Erika; Saito, Makoto; Mikawa, Yutaka; Kubo, Shuichi; Ikeda, Hirotaka; Fujito, Kenji; Uedono, Akira; Chichibu, Shigefusa F.

    2015-09-01

    An m-plane freestanding GaN substrate satisfying both low resistivity (ρ = 8.5 × 10-3 Ω·cm) and a low point-defect concentration, being applicable to vertically conducting power-switching devices, was grown by hydride vapor phase epitaxy on a nearly bowing-free bulk GaN seed wafer synthesized by the ammonothermal method in supercritical ammonia using an acidic mineralizer. Its threading dislocation and basal-plane staking-fault densities were approximately 104 cm-2 and lower than 100 cm-1, respectively. A record-long fast-component photoluminescence lifetime of 2.07 ns at room temperature was obtained for the near-band-edge emission, reflecting a significantly low concentration of nonradiative recombination centers composed of Ga vacancies.

  8. Impurity-related point defects and gamma-radiation response of massive quartz from the Borborema pegmatite province, in Brazil; Estudo da suscetibilidade ao escurecimento por radiacao gama de quartzo roseo-leitoso da provincia pegmatitica da Borborema

    Energy Technology Data Exchange (ETDEWEB)

    Miranda, Milena Ribas de [Universidade Federal de Pernambuco (UFPE), Recife, PE (Brazil). Programa de Pos-Graduacao em Engenharia Mineral; Gonzaga, Raysa Sthefany Gomes; Guzzo, Pedro Luiz [Universidade Federal de Pernambuco (UFPE), Recife, PE (Brazil). Dept. de Engenharia de Minas; Barreto, Sandra de Brito [Universidade Federal de Pernambuco (UFPE), Recife, PE (Brazil). Dept. de Geologia; Melgarejo, Joan Carles, E-mail: milaribas@hotmail.com, E-mail: raysagonzaga@hotmail.com, E-mail: pguzzo@ufpe.br, E-mail: sandrabrito@smart.net.br, E-mail: joan.carles.melgarejo.draper@ub.edu [Universidade de Barcelona, Barcelona (Spain). Dept. de Cristalografia, Mineralogia e Depositos Minerais

    2012-06-15

    This work has investigated the changes induced by {gamma}-radiation on impurity-related point defects in massive rose quartz from one deposit located at The Borborema Pegmatite Province (Northeast Region, in Brazil). Samples extracted from rose and colorless (milky) quartz blocks were irradiated with doses of {sup 60}Co, from 0.5 to 96 kGy. Point defects related to Al, Ge, Li and OH were measured by optical, infrared, and electron paramagnetic resonance spectroscopy, prior and after irradiation. The contents of Al, Li, Ge, Fe, Ti and other impurities were measured by inductively-coupled plasma mass spectrometry in quartz fragments exhibiting rose, pale-rose, and milky colorations. It was found that [AlO{sub 4}]{sup 0}, [AlO{sub 4}/H]{sup 0} and [GeO{sub 4}/Li]{sup 0} were generated by the dissociation of [AlO{sub 4}/Li]{sup 0} and [Li-OH] centers with doses as lower as 0.5 kGy. Above 8 kGy, the electron paramagnetic resonance signal related to [GeO{sub 4}/Li]{sup 0} decreases due to the intense mobility of Li species throughout the quartz lattice, giving rise to E'{sub 1} centers perturbed by Ge. The increase in [AlO{sub 4}]{sup 0} content with {gamma} doses and the consequent rise in the intensity of smoky color were similar for both rose and colorless quartz. Scanning electron microscopy carried out in insoluble residues obtained after chemical dissolution of each type of quartz revealed the presence of nanometric fibers only in rose specimens. These results suggested that the cause of rose color in massive quartz from Borborema Pegmatite Province is probably related to the presence of dumortierite inclusions. (author)

  9. Intrinsic and Extrinsic Motivation

    OpenAIRE

    Roland Bénabou; Jean Tirole

    2003-01-01

    A central tenet of economics is that individuals respond to incentives. For psychologists and sociologists, in contrast, rewards and punishments are often counterproductive, because they undermine "intrinsic motivation". We reconcile these two views, showing how performance incentives offered by an informed principal (manager, teacher, parent) can adversely impact an agent's (worker, child) perception of the task, or of his own abilities. Incentives are then only weak reinforcers in the short...

  10. Distinct molecular signatures of mild extrinsic and intrinsic atopic dermatitis

    DEFF Research Database (Denmark)

    Martel, Britta Cathrina; Litman, Thomas; Hald, Andreas

    2016-01-01

    Atopic dermatitis (AD) is a common inflammatory skin disease with underlying defects in epidermal function and immune responses. In this study, we used microarray analysis to investigate differences in gene expression in lesional skin from patients with mild extrinsic or intrinsic AD compared...

  11. Intrinsic and extrinsic mortality reunited

    DEFF Research Database (Denmark)

    Koopman, Jacob J E; Wensink, Maarten J; Rozing, Maarten P

    2015-01-01

    Intrinsic and extrinsic mortality are often separated in order to understand and measure aging. Intrinsic mortality is assumed to be a result of aging and to increase over age, whereas extrinsic mortality is assumed to be a result of environmental hazards and be constant over age. However......, allegedly intrinsic and extrinsic mortality have an exponentially increasing age pattern in common. Theories of aging assert that a combination of intrinsic and extrinsic stressors underlies the increasing risk of death. Epidemiological and biological data support that the control of intrinsic as well...... as extrinsic stressors can alleviate the aging process. We argue that aging and death can be better explained by the interaction of intrinsic and extrinsic stressors than by classifying mortality itself as being either intrinsic or extrinsic. Recognition of the tight interaction between intrinsic and extrinsic...

  12. In situ UHVEM study of {113}-defect formation in Si nanowires

    Science.gov (United States)

    Vanhellemont, Jan; Anada, Satoshi; Yasuda, Hidehiro; Van Marcke, Patricia; Bender, Hugo; Rooyackers, Rita; Vandooren, Anne

    2015-11-01

    Results are presented of a study of {113}-defect formation in vertical Si nanowire n-type tunnel field effect transistors with nanowire diameters ranging from 40 to 500 nm. The nanowires are etched into an epitaxial moderately As doped n-type layer grown on a heavily As doped {{{n}}}+ Si substrate. p+ contacts on the nanowire are created by epitaxial growth of a heavily B doped layer. Using focused ion beam cutting, samples for irradiation are prepared with different thicknesses so that the nanowires are fully or partially embedded in the sample thickness. {113}-defects are created in situ by 2 MeV e-irradiation in an ultra-high voltage electron microscope between room temperature and 375 °C. The observations are discussed in the frame of intrinsic point defect properties, taking into account the role of dopants and capping layers. The important impact of the specimen thickness is elucidated.

  13. Finite particle size drives defect-mediated domain structures in strongly confined colloidal liquid crystals.

    Science.gov (United States)

    Gârlea, Ioana C; Mulder, Pieter; Alvarado, José; Dammone, Oliver; Aarts, Dirk G A L; Lettinga, M Pavlik; Koenderink, Gijsje H; Mulder, Bela M

    2016-06-29

    When liquid crystals are confined to finite volumes, the competition between the surface anchoring imposed by the boundaries and the intrinsic orientational symmetry-breaking of these materials gives rise to a host of intriguing phenomena involving topological defect structures. For synthetic molecular mesogens, like the ones used in liquid-crystal displays, these defect structures are independent of the size of the molecules and well described by continuum theories. In contrast, colloidal systems such as carbon nanotubes and biopolymers have micron-sized lengths, so continuum descriptions are expected to break down under strong confinement conditions. Here, we show, by a combination of computer simulations and experiments with virus particles in tailor-made disk- and annulus-shaped microchambers, that strong confinement of colloidal liquid crystals leads to novel defect-stabilized symmetrical domain structures. These finite-size effects point to a potential for designing optically active microstructures, exploiting the as yet unexplored regime of highly confined liquid crystals.

  14. Defects in ZnO, CdTe, and Si: Optical, structural, and electrical characterization

    CERN Multimedia

    Deicher, M; Kronenberg, J; Johnston, K; Roder, J; Byrne, D J

    Electronic and optical properties of semiconductors are extremely sensitive to defects and impurities that have localized electronic states with energy levels in the band gap of the semiconductor. Spectroscopic techniques like photo-luminescence (PL), deep level transient spectroscopy (DLTS), or Hall effect that are able to detect and characterize band gap states do not reveal direct information about their microscopic origin. To overcome this chemical "blindness" radioactive isotopes are used as a tracer. Moreover, the recoil energies involved in ${\\beta}$- and ${\\gamma}$-decays can be used to create intrinsic, isolated point defects (interstitials, vacancies) in a controlled way. A microscopic insight into the structure and the thermodynamic properties of complexes formed by interacting defects can be gained by detecting the hyperfine interaction between the nuclear moments of radioactive dopants and the electromagnetic fields present at the site of the radioactive nucleus. These techniques will be used to...

  15. Defect-Assisted Hard-X-Ray Microscopy with Capillary Optics.

    Science.gov (United States)

    Korecki, Paweł; Sowa, Katarzyna M; Jany, Benedykt R; Krok, Franciszek

    2016-06-10

    Polycapillary x-ray focusing devices are built from hundreds of thousands of bent microcapillaries that are stacked into hexagonal arrays. We show that intrinsic point defects of the optics (e.g., missing or larger capillaries) lead to the formation of multiple x-ray images of an object positioned in the focal plane. These images can be recorded in parallel, and can provide spatial resolution that is limited by the defect size and not by the focal spot size. In a proof-of-principle experiment, we demonstrate submicron resolution, which has not yet been achieved with polycapillary focusing optics. Tailored optics with a controlled distribution of "defects" could be used for multimodal nanoscale x-ray imaging with laboratory setups.

  16. Management Control, Intrinsic Motivation and Creativity

    DEFF Research Database (Denmark)

    Godt Gregersen, Mikkel

    of the conclusion is that intrinsic motivation and management control can coexist under the conditions that all three basic needs, i.e. autonomy, competence and relatedness, are supported. This can happen when control takes point of departure in the individual employee. The second part of the conclusion......This thesis consists of a cape and three papers. The overall research question is: How can intrinsic motivation and management control coexist in a creative environment and how can coordination be possible in such a context? The cape ties together the research done in the three papers....... It is divided into six sections. The first section introduces the concepts of intrinsic motivation, creativity and management control. This is followed by a section on management control in a creative context. These two sections frame the thesis and introduce the setting in which the research has been done...

  17. Characterization of the structure and chemistry of defects in materials

    International Nuclear Information System (INIS)

    Larson, B.C.; Ruehle, M.; Seidman, D.N.

    1988-01-01

    Research programs, presented at the materials research symposium, on defects in materials are presented. Major areas include: point defects, defect aggregates, and ordering; defects in non-metals and semiconductors; atomic resolution imaging of defects; and gain boundaries, interfaces, and layered materials. Individual projects are processed separately for the data bases

  18. Quantum computing with defects

    Science.gov (United States)

    Varley, Joel

    2011-03-01

    The development of a quantum computer is contingent upon the identification and design of systems for use as qubits, the basic units of quantum information. One of the most promising candidates consists of a defect in diamond known as the nitrogen-vacancy (NV-1) center, since it is an individually-addressable quantum system that can be initialized, manipulated, and measured with high fidelity at room temperature. While the success of the NV-1 stems from its nature as a localized ``deep-center'' point defect, no systematic effort has been made to identify other defects that might behave in a similar way. We provide guidelines for identifying other defect centers with similar properties. We present a list of physical criteria that these centers and their hosts should meet and explain how these requirements can be used in conjunction with electronic structure theory to intelligently sort through candidate systems. To elucidate these points, we compare electronic structure calculations of the NV-1 center in diamond with those of several deep centers in 4H silicon carbide (SiC). Using hybrid functionals, we report formation energies, configuration-coordinate diagrams, and defect-level diagrams to compare and contrast the properties of these defects. We find that the NC VSi - 1 center in SiC, a structural analog of the NV-1 center in diamond, may be a suitable center with very different optical transition energies. We also discuss how the proposed criteria can be translated into guidelines to discover NV analogs in other tetrahedrally coordinated materials. This work was performed in collaboration with J. R. Weber, W. F. Koehl, B. B. Buckley, A. Janotti, C. G. Van de Walle, and D. D. Awschalom. This work was supported by ARO, AFOSR, and NSF.

  19. Intrinsic electron trapping in amorphous oxide

    Science.gov (United States)

    Strand, Jack; Kaviani, Moloud; Afanas’ev, Valeri V.; Lisoni, Judit G.; Shluger, Alexander L.

    2018-03-01

    We demonstrate that electron trapping at intrinsic precursor sites is endemic in non-glass-forming amorphous oxide films. The energy distributions of trapped electron states in ultra-pure prototype amorphous (a)-HfO2 insulator obtained from exhaustive photo-depopulation experiments demonstrate electron states in the energy range of 2–3 eV below the oxide conduction band. These energy distributions are compared to the results of density functional calculations of a-HfO2 models of realistic density. The experimental results can be explained by the presence of intrinsic charge trapping sites formed by under-coordinated Hf cations and elongated Hf–O bonds in a-HfO2. These charge trapping states can capture up to two electrons, forming polarons and bi-polarons. The corresponding trapping sites are different from the dangling-bond type defects responsible for trapping in glass-forming oxides, such as SiO2, in that the traps are formed without bonds being broken. Furthermore, introduction of hydrogen causes formation of somewhat energetically deeper electron traps when a proton is immobilized next to the trapped electron bi-polaron. The proposed novel mechanism of intrinsic charge trapping in a-HfO2 represents a new paradigm for charge trapping in a broad class of non-glass-forming amorphous insulators.

  20. Defects in flexoelectric solids

    Science.gov (United States)

    Mao, Sheng; Purohit, Prashant K.

    2015-11-01

    A solid is said to be flexoelectric when it polarizes in proportion to strain gradients. Since strain gradients are large near defects, we expect the flexoelectric effect to be prominent there and decay away at distances much larger than a flexoelectric length scale. Here, we quantify this expectation by computing displacement, stress and polarization fields near defects in flexoelectric solids. For point defects we recover some well known results from strain gradient elasticity and non-local piezoelectric theories, but with different length scales in the final expressions. For edge dislocations we show that the electric potential is a maximum in the vicinity of the dislocation core. We also estimate the polarized line charge density of an edge dislocation in an isotropic flexoelectric solid which is in agreement with some measurements in ice. We perform an asymptotic analysis of the crack tip fields in flexoelectric solids and show that our results share some features from solutions in strain gradient elasticity and piezoelectricity. We also compute the energy release rate for cracks using simple crack face boundary conditions and use them in classical criteria for crack growth to make predictions. Our analysis can serve as a starting point for more sophisticated analytic and computational treatments of defects in flexoelectric solids which are gaining increasing prominence in the field of nanoscience and nanotechnology.

  1. Intrinsic Chevrolets at the SSC

    International Nuclear Information System (INIS)

    Brodsky, S.J.; Collins, J.C.; Ellis, S.D.; Gunion, J.F.; Mueller, A.H.

    1984-01-01

    The possibility of the production at high energy of heavy quarks, supersymmetric particles and other large mass colored systems via the intrinsic twist-six components in the proton wave function is discussed. While the existing data do not rule out the possible relevance of intrinsic charm production at present energies, the extrapolation of such intrinsic contributions to very high masses and energies suggests that they will not play an important role at the SSC

  2. Defect stabilization and reverse annealing in ZnO implanted with nitrogen at room and cryogenic temperature

    Science.gov (United States)

    Azarov, Alexander; Wendler, Elke; Monakhov, Edouard; Svensson, Bengt G.

    2018-03-01

    Despite the fact that nitrogen is a potential acceptor dopant and one of the most studied elements in ZnO, lacking understanding of associated defects and their thermal evolution limits realization of reliable p-type doping of ZnO. Here, we use ion implantation to introduce N at room temperature (RT) and 15 K in ZnO samples with/without a pre-existing buried disorder layer formed by Ag ion bombardment aligned along the [0001] direction. The buried layer contains a high concentration of extended defects, which act as traps for migrating point defects. Channeling analysis shows that reverse annealing occurs in all the N implanted samples during post-implant heat treatment above 600 °C with strong non-linear additive damage accumulation in the co-implanted samples. The reverse annealing effect is less stable in the RT co-implanted sample and the data suggest that a high local concentration of intrinsic point defects, like Zn interstitials, promotes the stability of the N-defect clusters responsible for the reverse annealing. This suggestion is also corroborated by enhanced and defect-mediated Ag outdiffusion at 1100 °C in the RT co-implanted samples.

  3. Embedded defects

    International Nuclear Information System (INIS)

    Barriola, M.; Vachaspati, T.; Bucher, M.

    1994-01-01

    We give a prescription for embedding classical solutions and, in particular, topological defects in field theories which are invariant under symmetry groups that are not necessarily simple. After providing examples of embedded defects in field theories based on simple groups, we consider the electroweak model and show that it contains the Z string and a one-parameter family of strings called the W(α) string. It is argued that although the members of this family are gauge equivalent when considered in isolation, each member becomes physically distinct when multistring configurations are considered. We then turn to the issue of stability of embedded defects and demonstrate the instability of a large class of such solutions in the absence of bound states or condensates. The Z string is shown to be unstable for all values of the Higgs boson mass when θ W =π/4. W strings are also shown to be unstable for a large range of parameters. Embedded monopoles suffer from the Brandt-Neri-Coleman instability. Finally, we connect the electroweak string solutions to the sphaleron

  4. Comparative ab initio study of point defect energies and atom migration profiles in the L12-ordered intermetallic compounds Ni.sub.3./sub.Al, Ni.sub.3./sub.Ga, Pt.sub.3./sub.Ga, Pt.sub.3./sub.In

    Czech Academy of Sciences Publication Activity Database

    Vogtenhuber, B.; Houserová, Jana; Wolf, W.; Podloucky, R.; Pfeiler, W.; Püschl, W.

    -, 237-240 (2005), s. 133-138 ISSN 1012-0386. [Diffusion in Materials 2004. Krakow, 04.07.18-04.07.23] Institutional research plan: CEZ:AV0Z2041904 Keywords : migration profiles * point defect energies Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 0.483, year: 2005

  5. Surgical Treatment Guidelines for Digital Deformity Associated With Intrinsic Muscle Spasticity (Intrinsic Plus Foot) in Adults With Cerebral Palsy.

    Science.gov (United States)

    Boffeli, Troy J; Collier, Rachel C

    2015-01-01

    Intrinsic plus foot deformity has primarily been associated with cerebral palsy and involves spastic contracture of the intrinsic musculature with resultant toe deformities. Digital deformity is caused by a dynamic imbalance between the intrinsic muscles in the foot and extrinsic muscles in the lower leg. Spastic contracture of the toes frequently involves curling under of the lesser digits or contracture of the hallux into valgus or plantarflexion deformity. Patients often present with associated pressure ulcers, deformed toenails, shoe or brace fitting challenges, and pain with ambulation or transfers. Four different patterns of intrinsic plus foot deformity have been observed by the authors that likely relate to the different patterns of muscle involvement. Case examples are provided of the 4 patterns of intrinsic plus foot deformity observed, including global intrinsic plus lesser toe deformity, isolated intrinsic plus lesser toe deformity, intrinsic plus hallux valgus deformity, and intrinsic plus hallux flexus deformity. These case examples are presented to demonstrate each type of deformity and our approach for surgical management according to the contracture pattern. The surgical approach has typically involved tenotomy, capsulotomy, or isolated joint fusion. The main goals of surgical treatment are to relieve pain and reduce pressure points through digital realignment in an effort to decrease the risk of pressure sores and allow more effective bracing to ultimately improve the patient's mobility. Copyright © 2015 American College of Foot and Ankle Surgeons. Published by Elsevier Inc. All rights reserved.

  6. Holographic Chern-Simons defects

    Energy Technology Data Exchange (ETDEWEB)

    Fujita, Mitsutoshi [Department of Physics and Astronomy, University of Kentucky,Lexington, KY 40506 (United States); Yukawa Institute for Theoretical Physics, Kyoto University,Kyoto 606-8502 (Japan); Melby-Thompson, Charles M. [Department of Physics, Fudan University,220 Handan Road, 200433 Shanghai (China); Kavli Institute for the Physics and Mathematics of the Universe (WPI),The University of Tokyo Institutes for Advanced Study (UTIAS),The University of Tokyo, Kashiwanoha, Kashiwa, 277-8583 (Japan); Meyer, René [Department of Physics and Astronomy, Stony Brook University,Stony Brook, New York 11794-3800 (United States); Kavli Institute for the Physics and Mathematics of the Universe (WPI),The University of Tokyo Institutes for Advanced Study (UTIAS),The University of Tokyo, Kashiwanoha, Kashiwa, 277-8583 (Japan); Sugimoto, Shigeki [Center for Gravitational Physics, Yukawa Institute for Theoretical Physics, Kyoto University,Kyoto 606-8502 (Japan); Kavli Institute for the Physics and Mathematics of the Universe (WPI),The University of Tokyo Institutes for Advanced Study (UTIAS),The University of Tokyo, Kashiwanoha, Kashiwa, 277-8583 (Japan)

    2016-06-28

    We study SU(N) Yang-Mills-Chern-Simons theory in the presence of defects that shift the Chern-Simons level from a holographic point of view by embedding the system in string theory. The model is a D3-D7 system in Type IIB string theory, whose gravity dual is given by the AdS soliton background with probe D7 branes attaching to the AdS boundary along the defects. We holographically renormalize the free energy of the defect system with sources, from which we obtain the correlation functions for certain operators naturally associated to these defects. We find interesting phase transitions when the separation of the defects as well as the temperature are varied. We also discuss some implications for the Fractional Quantum Hall Effect and for 2-dimensional QCD.

  7. Intrinsically dynamic population models

    Directory of Open Access Journals (Sweden)

    Robert Schoen

    2005-03-01

    Full Text Available Intrinsically dynamic models (IDMs depict populations whose cumulative growth rate over a number of intervals equals the product of the long term growth rates (that is the dominant roots or dominant eigenvalues associated with each of those intervals. Here the focus is on the birth trajectory produced by a sequence of population projection (Leslie matrices. The elements of a Leslie matrix are represented as straightforward functions of the roots of the matrix, and new relationships are presented linking the roots of a matrix to its Net Reproduction Rate and stable mean age of childbearing. Incorporating mortality changes in the rates of reproduction yields an IDM when the subordinate roots are held constant over time. In IDMs, the birth trajectory generated by any specified sequence of Leslie matrices can be found analytically. In the Leslie model with 15 year age groups, the constant subordinate root assumption leads to reasonable changes in the age pattern of fertility, and equations (27 and (30 provide the population size and structure that result from changing levels of net reproduction. IDMs generalize the fixed rate stable population model. They can characterize any observed population, and can provide new insights into dynamic demographic behavior, including the momentum associated with gradual or irregular paths to zero growth.

  8. Geochemical indicators of intrinsic bioremediation

    International Nuclear Information System (INIS)

    Borden, R.C.; Gomez, C.A.; Becker, M.T.

    1995-01-01

    A detailed field investigation has been completed at a gasoline-contaminated aquifer near Rocky Point, NC, to examine possible indicators of intrinsic bioremediation and identify factors that may significantly influence the rae and extent of bioremediation. The dissolved plume of benzene, toluene, ethylbenzene, and xylene (BTEX) in ground water is naturally degrading. Toluene and o-xylene are most rapidly degraded followed by m-, p-xylene, and benzene. Ethylbenzene appears to degrade very slowly under anaerobic conditions present in the center of the plume. The rate and extent of biodegradation appears to be strongly influenced by the type and quantity of electron acceptors present in the aquifer. At the upgradient edge of the plume, nitrate, ferric iron, and oxygen are used as terminal electron acceptors during hydrocarbon biodegradation. The equivalent of 40 to 50 mg/l of hydrocarbon is degraded based on the increase in dissolved CO 2 relative to background ground water. Immediately downgradient of the source area, sulfate and iron are the dominant electron acceptors. Toluene and o-xylene are rapidly removed in this region. Once the available oxygen, nitrate, and sulfate are consumed, biodegradation is limited and appears to be controlled by mixing and aerobic biodegradation at the plume fringes

  9. Defect reaction network in Si-doped InAs. Numerical predictions.

    Energy Technology Data Exchange (ETDEWEB)

    Schultz, Peter A. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

    2015-05-01

    This Report characterizes the defects in the def ect reaction network in silicon - doped, n - type InAs predicted with first principles density functional theory. The reaction network is deduced by following exothermic defect reactions starting with the initially mobile interstitial defects reacting with common displacement damage defects in Si - doped InAs , until culminating in immobile reaction p roducts. The defect reactions and reaction energies are tabulated, along with the properties of all the silicon - related defects in the reaction network. This Report serves to extend the results for the properties of intrinsic defects in bulk InAs as colla ted in SAND 2013 - 2477 : Simple intrinsic defects in InAs : Numerical predictions to include Si - containing simple defects likely to be present in a radiation - induced defect reaction sequence . This page intentionally left blank

  10. Quantum computing with defects.

    Science.gov (United States)

    Weber, J R; Koehl, W F; Varley, J B; Janotti, A; Buckley, B B; Van de Walle, C G; Awschalom, D D

    2010-05-11

    Identifying and designing physical systems for use as qubits, the basic units of quantum information, are critical steps in the development of a quantum computer. Among the possibilities in the solid state, a defect in diamond known as the nitrogen-vacancy (NV(-1)) center stands out for its robustness--its quantum state can be initialized, manipulated, and measured with high fidelity at room temperature. Here we describe how to systematically identify other deep center defects with similar quantum-mechanical properties. We present a list of physical criteria that these centers and their hosts should meet and explain how these requirements can be used in conjunction with electronic structure theory to intelligently sort through candidate defect systems. To illustrate these points in detail, we compare electronic structure calculations of the NV(-1) center in diamond with those of several deep centers in 4H silicon carbide (SiC). We then discuss the proposed criteria for similar defects in other tetrahedrally coordinated semiconductors.

  11. Computing Intrinsic Images.

    Science.gov (United States)

    1986-08-01

    illumination from the imaged scene. In other words the starting point is cine or video imagery. The first step in the computation, according to all the existing...this optical flow field, leading researchers in the field are starting to realize that computation of optical flow is a utopia [Horn, 1986]. So, in

  12. Oxygen defect processes in silicon and silicon germanium

    KAUST Repository

    Chroneos, A.

    2015-06-18

    Silicon and silicon germanium are the archetypical elemental and alloy semiconductor materials for nanoelectronic, sensor, and photovoltaic applications. The investigation of radiation induced defects involving oxygen, carbon, and intrinsic defects is important for the improvement of devices as these defects can have a deleterious impact on the properties of silicon and silicon germanium. In the present review, we mainly focus on oxygen-related defects and the impact of isovalent doping on their properties in silicon and silicon germanium. The efficacy of the isovalent doping strategies to constrain the oxygen-related defects is discussed in view of recent infrared spectroscopy and density functional theory studies.

  13. Three key points along an intrinsic reaction coordinate

    Indian Academy of Sciences (India)

    Unknown

    grama Bicentenario en Ciencias y Tecnologia. References. 1. Fukui K 1981 Acc. Chem. Res. 14 363. 2. Gonzalez C and Schlegel H B 1990 J. Phys. Chem. 94. 5523. 3. Hammond G S 1955 J. Am. Chem. Soc. 77 334. 4. Toro-Labbé A 1999 J. Phys. Chem. A103 4398. 5. Jaque P and Toro-Labbé A 2000 J. Phys. Chem. A104.

  14. The reaction force: Three key points along an intrinsic reaction ...

    Indian Academy of Sciences (India)

    ... Jaque2 Monica C Concha1 Jane S Murray1. Department of Chemistry, University of New Orleans, New Orleans, LA 70148 USA; Laboratorio de Química Teórica Computacional (QTC), Departamento de Química Física, Facultad de Química, Pontificia Universidad Cátolica de Chile, Casilla 306, Correo 22, Santiago, Chile ...

  15. Three key points along an intrinsic reaction coordinate

    Indian Academy of Sciences (India)

    Unknown

    bLaboratorio de Química Teórica Computacional (QTC), Departamento de Química Física, Facultad de. Química, Pontificia Universidad Cátolica de Chile, Casilla 306, Correo 22, Santiago, Chile e-mail: ato1a@pac.cl. Abstract. The concept of the reaction force is presented and discussed in detail. For typical processes.

  16. The reaction force: Three key points along an intrinsic reaction ...

    Indian Academy of Sciences (India)

    2016-08-26

    Aug 26, 2016 ... ... Toro-Labbé2 Soledad Gutiérrez-Oliva2 Bárbara herrera2 Pablo Jaque2 Monica C Concha1 Jane S Murray1. Department of Chemistry, University of New Orleans, New Orleans, LA 70148 USA; Laboratorio de Química Teórica Computacional (QTC), Departamento de Química Física, Facultad de Química, ...

  17. Coagulation defects.

    Science.gov (United States)

    Soliman, Doreen E; Broadman, Lynn M

    2006-09-01

    The present understanding of the coagulation process emphasizes the final common pathway and the proteolytic systems that result in the degradation of formed clots and the prevention of unwanted clot formations, as well as a variety of defense systems that include tissue repair, autoimmune processes, arteriosclerosis, tumor growth, the spread of metastases, and defense systems against micro-organisms. This article discusses diagnosis and management of some of the most common bleeding disorders. The goals are to provide a simple guide on how best to manage patients afflicted with congenital or acquired clotting abnormalities during the perioperative period, present a brief overview of the methods of testing and monitoring the coagulation defects, and discuss the appropriate pharmacologic or blood component therapies for each disease.

  18. Ultrafast carrier dynamics in band edge and broad deep defect emission ZnSe nanowires

    Science.gov (United States)

    Othonos, Andreas; Lioudakis, Emmanouil; Philipose, U.; Ruda, Harry E.

    2007-12-01

    Ultrafast carrier dynamics of ZnSe nanowires grown under different growth conditions have been studied. Transient absorption measurements reveal the dependence of the competing effects of state filling and photoinduced absorption on the probed energy states. The relaxation of the photogenerated carriers occupying defect states in the stoichiometric and Se-rich samples are single exponentials with time constants of 3-4ps. State filling is the main contribution for probe energies below 1.85eV in the Zn-rich grown sample. This ultrafast carrier dynamics study provides an important insight into the role that intrinsic point defects play in the observed photoluminescence from ZnSe nanowires.

  19. Intrinsically Passive Handling and Grasping

    NARCIS (Netherlands)

    Stramigioli, Stefano; Scherpen, Jacquelien M.A.; Khodabandehloo, Koorosh

    2000-01-01

    The paper presents a control philosophy called Intrinsically Passive Control, which has the feature to properly behave during interaction with any passive objects. The controlled robot will never become unstable due to the physical structure of the controller.

  20. 2010 Defects in Semiconductors GRC

    Energy Technology Data Exchange (ETDEWEB)

    Shengbai Zhang

    2011-01-06

    Continuing its tradition of excellence, this Gordon Conference will focus on research at the forefront of the field of defects in semiconductors. The conference will have a strong emphasis on the control of defects during growth and processing, as well as an emphasis on the development of novel defect detection methods and first-principles defect theories. Electronic, magnetic, and optical properties of bulk, thin film, and nanoscale semiconductors will be discussed in detail. In contrast to many conferences, which tend to focus on specific semiconductors, this conference will deal with point and extended defects in a broad range of electronic materials. This approach has proved to be extremely fruitful for advancing fundamental understanding in emerging materials such as wide-band-gap semiconductors, oxides, sp{sup 2} carbon based-materials, and photovoltaic/solar cell materials, and in understanding important defect phenomena such as doping bottleneck in nanostructures and the diffusion of defects and impurities. The program consists of about twenty invited talks and a number of contributed poster sessions. The emphasis should be on work which has yet to be published. The large amount of discussion time provides an ideal forum for dealing with topics that are new and/or controversial.

  1. Single ventricle cardiac defect

    International Nuclear Information System (INIS)

    Eren, B.; Turkmen, N.; Fedakar, R.; Cetin, V.

    2010-01-01

    Single ventricle heart is defined as a rare cardiac abnormality with a single ventricle chamber involving diverse functional and physiological defects. Our case is of a ten month-old baby boy who died shortly after admission to the hospital due to vomiting and diarrhoea. Autopsy findings revealed cyanosis of finger nails and ears. Internal examination revealed; large heart, weighing 60 grams, single ventricle, without a septum and upper membranous part. Single ventricle is a rare pathology, hence, this paper aims to discuss this case from a medico-legal point of view. (author)

  2. Symplectic Structure of Intrinsic Time Gravity

    Directory of Open Access Journals (Sweden)

    Eyo Eyo Ita

    2016-08-01

    Full Text Available The Poisson structure of intrinsic time gravity is analysed. With the starting point comprising a unimodular three-metric with traceless momentum, a trace-induced anomaly results upon quantization. This leads to a revision of the choice of momentum variable to the (mixed index traceless momentric. This latter choice unitarily implements the fundamental commutation relations, which now take on the form of an affine algebra with SU(3 Lie algebra amongst the momentric variables. The resulting relations unitarily implement tracelessness upon quantization. The associated Poisson brackets and Hamiltonian dynamics are studied.

  3. Intrinsically conductive polymer thin film piezoresistors

    DEFF Research Database (Denmark)

    Lillemose, Michael; Spieser, Martin; Christiansen, N.O.

    2008-01-01

    We report on the piezoresistive effect in the intrinsically conductive polymer, polyaniline. A process recipe for indirect patterning of thin film polyaniline has been developed. Using a specially designed chip, the polyaniline thin films have been characterised with respect to resistivity...... and strain sensitivity using two- and four-point measurement method. We have found that polyaniline has a negative gauge factor of K = -4.9, which makes it a candidate for piezoresistive read-out in polymer based MEMS-devices. (C) 2007 Elsevier B.V. All rights reserved....

  4. Formation and evolution of point defects created in alkali halogen compounds irradiated by heavy ions; Formation et evolution des defauts ponctuels crees dans certains halogenures alcalins irradies par des ions lourds

    Energy Technology Data Exchange (ETDEWEB)

    Hourdequin, E. [Nantes Univ., 44 (France)

    1993-07-16

    The goal of this study was to achieve a better understanding of the heavy-ion material interaction. Alkali halogen crystals were chosen since the color centers produced by heavy ions can be distinguished easier from those generated by X rays. Measurements on KI irradiated at low temperature showed that the usual process of non radiative de-excitation of self-captured exciton is not prevailing. As the main objective of this work was the exact determination of the defects created by accelerated heavy ions, an important effort was dedicated to the spectrum deconvolution. Due to the high quality of the obtained spectra the V band analyse was possible. The defect stability was found to have the same nature in all the cubical alkali halogens and depend essentially on the crystal type. The defect evolution after irradiation is related to the diffusion coefficients corresponding to each mobile species and to the crystal lattice in which they move. Based on measurements made at different temperatures a simple modeling of the recombination kinetics was proposed. This effect was found to be specific to irradiation by heavy ions. It is difficult to determine the initial processes from the fossil defects, so, the defect history must be known as the described investigation methods do not permit to establish the transient aspect of defect creation. The important role of impurities should be stressed as the third intruder in the ion/crystal configuration; it can modify significantly the final state of the irradiated crystal, as it was found in KI, for instance. The open problems underlined in this study will probably be solved by using the atomic force microscopy and diffraction or on-line Raman measurements in ISOC chamber to avoid the passage to ambient conditions of the crystals irradiated at low temperatures 60 refs.

  5. Benign gastric filling defect

    Energy Technology Data Exchange (ETDEWEB)

    Oh, K. K.; Lee, Y. H.; Cho, O. K.; Park, C. Y. [Yonsei University College of Medicine, Seoul (Korea, Republic of)

    1979-06-15

    The gastric lesion is a common source of complaints to Orientals, however, evaluation of gastric symptoms and laboratory examination offer little specific aid in the diagnosis of gastric diseases. Thus roentgenography of gastrointestinal tract is one of the most reliable method for detail diagnosis. On double contract study of stomach, gastric filling defect is mostly caused by malignant gastric cancer, however, other benign lesions can cause similar pictures which can be successfully treated by surgery. 66 cases of benign causes of gastric filling defect were analyzed at this point of view, which was verified pathologically by endoscope or surgery during recent 7 years in Yensei University College of Medicine, Severance Hospital. The characteristic radiological picture of each disease was discussed for precise radiologic diagnosis. 1. Of total 66 cases, there were 52 cases of benign gastric tumor 10 cases of gastric varices, 5 cases of gastric bezoar, 5 cases of corrosive gastritis, 3 cases of granulomatous disease and one case of gastric hematoma. 2. The most frequent causes of benign tumors were adenomatous polyp (35/42) and the next was leiomyoma (4/42). Others were one of case of carcinoid, neurofibroma and cyst. 3. Characteristic of benign adenomatous polyp were relatively small in size, smooth surface and were observed that large size, benign polyp was frequently type IV lesion with a stalk. 4. Submucosal tumors such as leiomyoma needed differential diagnosis with polypoid malignant cancer. However, the characteristic points of differentiation was well circumscribed smooth margined filling defect without definite mucosal destruction on surface. 5. Gastric varices showed multiple lobulated filling defected especially on gastric fundus that changed its size and shape by respiration and posture of patients. Same varices lesions on esophagus and history of liver disease were helpful for easier diagnosis. 6. Gastric bezoar showed well defined movable mass

  6. Benign gastric filling defect

    International Nuclear Information System (INIS)

    Oh, K. K.; Lee, Y. H.; Cho, O. K.; Park, C. Y.

    1979-01-01

    The gastric lesion is a common source of complaints to Orientals, however, evaluation of gastric symptoms and laboratory examination offer little specific aid in the diagnosis of gastric diseases. Thus roentgenography of gastrointestinal tract is one of the most reliable method for detail diagnosis. On double contract study of stomach, gastric filling defect is mostly caused by malignant gastric cancer, however, other benign lesions can cause similar pictures which can be successfully treated by surgery. 66 cases of benign causes of gastric filling defect were analyzed at this point of view, which was verified pathologically by endoscope or surgery during recent 7 years in Yensei University College of Medicine, Severance Hospital. The characteristic radiological picture of each disease was discussed for precise radiologic diagnosis. 1. Of total 66 cases, there were 52 cases of benign gastric tumor 10 cases of gastric varices, 5 cases of gastric bezoar, 5 cases of corrosive gastritis, 3 cases of granulomatous disease and one case of gastric hematoma. 2. The most frequent causes of benign tumors were adenomatous polyp (35/42) and the next was leiomyoma (4/42). Others were one of case of carcinoid, neurofibroma and cyst. 3. Characteristic of benign adenomatous polyp were relatively small in size, smooth surface and were observed that large size, benign polyp was frequently type IV lesion with a stalk. 4. Submucosal tumors such as leiomyoma needed differential diagnosis with polypoid malignant cancer. However, the characteristic points of differentiation was well circumscribed smooth margined filling defect without definite mucosal destruction on surface. 5. Gastric varices showed multiple lobulated filling defected especially on gastric fundus that changed its size and shape by respiration and posture of patients. Same varices lesions on esophagus and history of liver disease were helpful for easier diagnosis. 6. Gastric bezoar showed well defined movable mass

  7. DEFECTS SIMULATION OF ROLLING STRIP

    Directory of Open Access Journals (Sweden)

    Rudolf Mišičko

    2009-06-01

    Full Text Available The defects in the continuous casting slabs can be developed or kept down in principle by rolling technology, especially depend to sort, size and distribution of primary defects, as well as used of rolling parameters. Scope of the article is on observation behavior artificial surface and undersurface defects (scores without filler (surface defects and filling by oxides and casting powder (subsurface defects. First phase of hot rolling process have been done by software simulation DEFORM 3D setting to the limited condition for samples with surface defects. Samples of material with low-carbon steel of sizes h x b x l have been chosen and the surface defects shape „U” and „V” of scores have been injected artificially by software. The process of rolling have been simulated on the deformation temperatures 1200°C and 900°C, whereas on the both of this deformation temperatures have been applied amount of deformation 10 and 50 %. With respect to the process of computer simulation, it is not possible to truthful real oxidation condition (physical – chemical process during heat of metal, in the second phase of our investigation have been observed influence of oxides and casting powders inside the scores for a defect behavior in plastic deformation process (hot and cold rolling process in laboratory condition. The basic material was STN steel class 11 375, cladding material was steel on the bases C-Mn-Nb-V. Scores have been filled by scales to get from the heating temperatures (1100°C a 1250°C, varied types of casting powders, if you like mixture of scale and casting powders in the rate 1:4. The joint of the basic and cladding material have been done by peripheral welded joint. Experiment results from both phases are pointed on the evolution of original typology defects in rolling process.

  8. Neural Tube Defects

    Science.gov (United States)

    Neural tube defects are birth defects of the brain, spine, or spinal cord. They happen in the ... that she is pregnant. The two most common neural tube defects are spina bifida and anencephaly. In ...

  9. Multiscale crystal defect dynamics: A coarse-grained lattice defect model based on crystal microstructure

    Science.gov (United States)

    Lyu, Dandan; Li, Shaofan

    2017-10-01

    Crystal defects have microstructure, and this microstructure should be related to the microstructure of the original crystal. Hence each type of crystals may have similar defects due to the same failure mechanism originated from the same microstructure, if they are under the same loading conditions. In this work, we propose a multiscale crystal defect dynamics (MCDD) model that models defects by considering its intrinsic microstructure derived from the microstructure or material genome of the original perfect crystal. The main novelties of present work are: (1) the discrete exterior calculus and algebraic topology theory are used to construct a scale-up (coarse-grained) dual lattice model for crystal defects, which may represent all possible defect modes inside a crystal; (2) a higher order Cauchy-Born rule (up to the fourth order) is adopted to construct atomistic-informed constitutive relations for various defect process zones, and (3) an hierarchical strain gradient theory based finite element formulation is developed to support an hierarchical multiscale cohesive (process) zone model for various defects in a unified formulation. The efficiency of MCDD computational algorithm allows us to simulate dynamic defect evolution at large scale while taking into account atomistic interaction. The MCDD model has been validated by comparing of the results of MCDD simulations with that of molecular dynamics (MD) in the cases of nanoindentation and uniaxial tension. Numerical simulations have shown that MCDD model can predict dislocation nucleation induced instability and inelastic deformation, and thus it may provide an alternative solution to study crystal plasticity.

  10. Topological defects from the multiverse

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Jun; Vilenkin, Alexander [Institute of Cosmology, Department of Physics and Astronomy, Tufts University, Medford, MA 02155 (United States); Blanco-Pillado, Jose J. [Department of Theoretical Physics, University of the Basque Country UPV/EHU, 48080 Bilbao (Spain); Garriga, Jaume, E-mail: jun.zhang@tufts.edu, E-mail: josejuan.blanco@ehu.es, E-mail: jaume.garriga@ub.edu, E-mail: vilenkin@cosmos.phy.tufts.edu [Departament de Fisica Fonamental i Institut de Ciencies del Cosmos, Universitat de Barcelona, Marti i Franques, 1, 08028, Barcelona (Spain)

    2015-05-01

    Many theories of the early universe predict the existence of a multiverse where bubbles continuously nucleate giving rise to observers in their interior. In this paper, we point out that topological defects of several dimensionalities will also be produced in de Sitter like regions of the multiverse. In particular, defects could be spontaneously nucleated in our parent vacuum. We study the evolution of these defects as they collide with and propagate inside of our bubble. We estimate the present distribution of defects in the observable part of the universe. The expected number of such nearby defects turns out to be quite small, even for the highest nucleation rate. We also study collisions of strings and domain walls with our bubble in our past light cone. We obtain simulated full-sky maps of the loci of such collisions, and find their angular size distribution. Similarly to what happens in the case of bubble collisions, the prospect of detecting any collisions of our bubble with ambient defects is greatly enhanced in the case where the cosmological constant of our parent vacuum is much higher than the vacuum energy density during inflation in our bubble.

  11. Topological defects from the multiverse

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Jun [Institute of Cosmology, Department of Physics and Astronomy, Tufts University, Medford, MA 02155 (United States); Blanco-Pillado, Jose J. [Department of Theoretical Physics, University of the Basque Country UPV/EHU, 48080 Bilbao (Spain); IKERBASQUE, Basque Foundation for Science, 48013, Bilbao (Spain); Garriga, Jaume [Departament de Fisica Fonamental i Institut de Ciencies del Cosmos, Universitat de Barcelona, Marti i Franques, 1, 08028, Barcelona (Spain); Vilenkin, Alexander [Institute of Cosmology, Department of Physics and Astronomy, Tufts University, Medford, MA 02155 (United States)

    2015-05-28

    Many theories of the early universe predict the existence of a multiverse where bubbles continuously nucleate giving rise to observers in their interior. In this paper, we point out that topological defects of several dimensionalities will also be produced in de Sitter like regions of the multiverse. In particular, defects could be spontaneously nucleated in our parent vacuum. We study the evolution of these defects as they collide with and propagate inside of our bubble. We estimate the present distribution of defects in the observable part of the universe. The expected number of such nearby defects turns out to be quite small, even for the highest nucleation rate. We also study collisions of strings and domain walls with our bubble in our past light cone. We obtain simulated full-sky maps of the loci of such collisions, and find their angular size distribution. Similarly to what happens in the case of bubble collisions, the prospect of detecting any collisions of our bubble with ambient defects is greatly enhanced in the case where the cosmological constant of our parent vacuum is much higher than the vacuum energy density during inflation in our bubble.

  12. Determination of defect content and defect profile in semiconductor heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Zubiaga, A [Laboratory of Physics, HUT, PO Box 1100, 02015 TKK, Espoo (Finland); Garcia, J A; Plazaola, F [Zientzia eta Teknologia Fakultatea, Euskal Herriko Unbertsitatea, P. K. 644, 48080, Bilbao (Spain); Zuniga-Perez, J; Munoz-Sanjose, V, E-mail: fernando.plazaola@ehu.es [Universitat de Valencia, Departamento de Fisica Aplicada i Electromagnetisme, Dr. Moliner 50, 46100 Burjassot, Valencia (Spain)

    2011-01-10

    In this article we present an overview of the technique to obtain the defects depth profile and width of a deposited layer and multilayer based on positron annihilation spectroscopy. In particular we apply the method to ZnO and ZnO/ZnCdO layers deposited on sapphire substrates. After introducing some terminology we first calculate the trend that the W/S parameters of the Doppler broadening measurements must follow, both in a qualitative and quantitative way. From this point we extend the results to calculate the width and defect profiles in deposited layer samples.

  13. Properties of point defects either native or induced by irradiation in the 3C and 6H polytypes of silicon carbide determined by positron annihilation and EPR; Proprietes des defauts ponctuels natifs et induits par irradiation dans les polytypes 3C et 6H du carbure de silicium determinees par annihilation de positons et RPE

    Energy Technology Data Exchange (ETDEWEB)

    Kerbiriou, X

    2006-02-15

    Potential applications of silicon carbide (SiC) in micro-electronics have justified many studies on point defects, which play an important role in the electrical compensation. Moreover, this material has many assets to take part in the fissile materials confining in the gas cooled reactors of the future (4. generation). In this thesis, we have used Electronic Paramagnetic Resonance and Positron Annihilation Spectroscopy to study the properties of point defects (nature, size, charge state, migration and agglomeration during annealing), either native or induced by irradiation with various particles (H{sup +}, e{sup -}, carbon ions), in the 3C and 6H polytypes of SiC. The positron annihilation study of native defects in 6H-SiC has shown the presence of a strong concentration of non-vacancy traps of acceptor type, which are not present in the 3C-SiC crystals. The nature of the defects detected after irradiation with low energy electrons (190 keV) depends on the polytype. Indeed, while silicon Frenkel pairs and carbon mono-vacancies are detected in the 6H crystals, only carbon mono-vacancies are detected in the 3C crystals. We propose that these differences concerning the populations of detected point defects result from different values of the silicon displacement threshold energy for the two polytypes (approximately 20 eV for 6H and 25 V for 3C). In addition, the irradiations with 12 MeV protons and 132 MeV carbon ions have created silicon mono-vacancies as well as VSi-VC di-vacancies. Neither the particle (protons or ions carbon), nor the polytype (3C or 6H) influence the nature of the generated defects. Finally the study of the annealing of 6H-SiC monocrystals irradiated with 12 MeV protons have revealed several successive processes. The most original result is the agglomeration of the silicon mono-vacancies with the VSi-VC di-vacancies which leads to the formation of VSi-VC-VSi tri-vacancies. (author)

  14. Characterization of Partial Intrinsic Symmetries

    NARCIS (Netherlands)

    Shehu, Aurela; Brunton, Alan; Wuhrer, Stefanie; Wand, Michael

    2014-01-01

    We present a mathematical framework and algorithm for characterizing and extracting partial intrinsic symmetries of surfaces, which is a fundamental building block for many modern geometry processing algorithms. Our goal is to compute all “significant” symmetry information of the shape, which we

  15. Intrinsic volumes of symmetric cones

    OpenAIRE

    Amelunxen, Dennis; Bürgisser, Peter

    2012-01-01

    We compute the intrinsic volumes of the cone of positive semidefinite matrices over the real numbers, over the complex numbers, and over the quaternions, in terms of integrals related to Mehta's integral. Several applications for the probabilistic analysis of semidefinite programming are given.

  16. Acoustic resonance spectroscopy intrinsic seals

    International Nuclear Information System (INIS)

    Olinger, C.T.; Burr, T.; Vnuk, D.R.

    1994-01-01

    We have begun to quantify the ability of acoustic resonance spectroscopy (ARS) to detect the removal and replacement of the lid of a simulated special nuclear materials drum. Conceptually, the acoustic spectrum of a container establishcs a baseline fingerprint, which we refer to as an intrinsic seal, for the container. Simply removing and replacing the lid changes some of the resonant frequencies because it is impossible to exactly duplicate all of the stress patterns between the lid and container. Preliminary qualitative results suggested that the ARS intrinsic seal could discriminate between cases where a lid has or has not been removed. The present work is directed at quantifying the utility of the ARS intrinsic seal technique, including the technique's sensitivity to ''nuisance'' effects, such as temperature swings, movement of the container, and placement of the transducers. These early quantitative tests support the potential of the ARS intrinsic seal application, but also reveal a possible sensitivity to nuisance effects that could limit environments or conditions under which the technique is effective

  17. Intrinsic Motivation in Physical Education

    Science.gov (United States)

    Davies, Benjamin; Nambiar, Nathan; Hemphill, Caroline; Devietti, Elizabeth; Massengale, Alexandra; McCredie, Patrick

    2015-01-01

    This article describes ways in which educators can use Harter's perceived competence motivation theory, the achievement goal theory, and self-determination theory to develop students' intrinsic motivation to maintain physical fitness, as demonstrated by the Sound Body Sound Mind curriculum and proven effective by the 2013 University of…

  18. Intrinsic Efficiency Calibration Considering Geometric Factors in Gamma-ray Computed Tomography for Radioactive Waste Assay

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Zhe [China Institute of Atomic Energy, Beijing 102413 (China); Zhang, Li [Key Laboratory of Particle and Radiation Imaging, Tsinghua University, Ministry of Education, Department of Engineering Physics, Tsinghua University, Beijing 100084 (China)

    2015-07-01

    In radioactive waste assay with gamma-ray computed tomography, calibration for intrinsic efficiency of the system is important to the reconstruction of radioactivity distribution. Due to the geometric characteristics of the system, the non-uniformity of intrinsic efficiency for gamma-rays with different incident positions and directions are often un-negligible. Intrinsic efficiency curves versus geometric parameters of incident gamma-ray are obtained by Monte-Carlo simulation, and two intrinsic efficiency models are suggested to characterize the intrinsic efficiency determined by relative source-detector position and system geometry in the system matrix. Monte-Carlo simulation is performed to compare the different intrinsic efficiency models. Better reconstruction results of radioactivity distribution are achieved by both suggested models than by the uniform intrinsic efficiency model. And compared to model based on detector position, model based on point response increases reconstruction accuracy as well as complexity and time of calculation. (authors)

  19. Intrinsic conduction through topological surface states of insulating Bi{sub 2}Te{sub 3} epitaxial thin films

    Energy Technology Data Exchange (ETDEWEB)

    Hoefer, Katharina; Becker, Christoph; Rata, Diana; Thalmeier, Peter; Tjeng, Liu Hao [Max Planck Institute for Chemical Physics of Solids, Dresden (Germany); Swanson, Jesse [Max Planck Institute for Chemical Physics of Solids, Dresden (Germany); University of British Columbia, Vancouver (Canada)

    2015-07-01

    Topological insulators represent a new state of matter that open up new opportunities to create unique quantum particles. Many exciting experiments have been proposed by theory, yet, the main obstacle for their execution is material quality and cleanliness of the experimental conditions. The presence of tiny amounts of defects in the bulk or contaminants at the surface already mask these phenomena. We present the preparation, structural and spectroscopic characterisation of MBE-grown Bi{sub 2}Te{sub 3} thin films that are insulating in the bulk. Moreover, temperature dependent four-point-probe resistivity measurements of the Dirac states on surfaces that are intrinsically clean were conducted. The total amount of surface charge carries is in the order of 10{sup 12} cm{sup -2} and mobilities up to 4600 cm{sup 2}/Vs are observed. Importantly, these results are achieved by carrying out the preparation and characterisation all in-situ under ultra-high-vacuum conditions.

  20. Yield impacting systematic defects search and management

    Science.gov (United States)

    Zhang, Jing; Xu, Qingxiu; Zhang, Xin; Zhao, Xing; Ning, Jay; Cheng, Guojie; Chen, Shijie; Zhang, Gary; Vikram, Abhishek; Su, Bo

    2012-03-01

    Despite great effort before design tapeout, there are still some pattern related systematic defects showing up in production, which impact product yield. Through various check points in the production life cycle endeavor is made to detect these defective patterns. It is seen that apart from the known defective patterns, slight variations of polygon sizes and shapes in the known defective patterns also cause yield loss. This complexity is further compounded when interactions among multiple process layers causes the defect. Normally the exact pattern matching techniques cannot detect these variations of the defective patterns. With the currently existing tools in the fab it is a challenge to define the 'sensitive patterns', which are arbitrary variations in the known 'defective patterns'. A design based approach has been successfully experimented on product wafers to detect yield impacting defects that greatly reduces the TAT for hotspot analysis and also provides optimized care area definition to enable high sensitivity wafer inspection. A novel Rule based pattern search technique developed by Anchor Semiconductor has been used to find sensitive patterns in the full chip design. This technique allows GUI based pattern search rule generation like, edge move or edge-to-edge distance range, so that any variations of a particular sensitive pattern can be captured and flagged. Especially the pattern rules involving multiple process layers, like M1-V1-M2, can be defined easily using this technique. Apart from using this novel pattern search technique, design signatures are also extracted around the defect locations in the wafer and used in defect classification. This enhanced defect classification greatly helps in determining most critical defects among the total defect population. The effectiveness of this technique has been established through design to defect correlation and SEM verification. In this paper we will report details of the design based experiments that

  1. Correlation between defect and magnetism of low energy Ar+9 implanted and un-implanted Zn0.95Mn0.05O thin films suitable for electronic application

    International Nuclear Information System (INIS)

    Neogi, S.K.; Midya, N.; Pramanik, P.; Banerjee, A.; Bhattacharyya, A.; Taki, G.S.; Krishna, J.B.M.; Bandyopadhyay, S.

    2016-01-01

    The structural, morphological, optical and magnetic properties of Ar +9 implanted 5 at% Mn doped ZnO films have been investigated to detect the correlation between ferromagnetism (FM) and defect. Sol–gel derived films were implanted with fluences 0 (un-implanted), 5×10 14 (low), 10 15 (intermediate) and 10 16 (high) ions/cm 2 . Rutherford back scattering (RBS), X-ray diffraction (XRD), atomic force microscope (AFM) and magnetic force microscope (MFM), UV–visible, photoluminescence and X-ray absorption spectroscopy (XAS) and superconducting quantum interference device vibrating sample magnetometer (SQUID VSM) were employed for investigation. XRD indicated single phase nature of the films. Absence of impurity phase has been confirmed from several other measurements also. Ion implantation induces a large concentration of point defects into the films as identified from optical study. All films exhibit intrinsic FM at room temperature (RT). The magnetization attains the maximum for the film implanted with fluence 10 16 ions/cm 2 with saturation magnetization (M S ) value 0.69 emu/gm at RT. Magnetic properties of the films were interpreted using bound magnetic polaron (BMP). BMP generated from the intrinsic exchange interaction of Mn 2+ ions and V Zn related defects actually controls the FM. The practical utility of these films in transparent spin electronic device has also been exhibited. - Highlights: • Synthesis of transparent 5 at% Mn doped ZnO films was done by sol-gel technique. • Defect induced intrinsic ferromagnetism was observed for Ar 9+ ion implanted films. • The maximum magnetization was attained for highest dose of Ar 9+ implantation. • Zn vacancy may favors intrinsic ferromagnetic ordering. • Intrinsic ferromagnetism was interpreted in terms of bound magnetic polaron model.

  2. Correlation between defect and magnetism of low energy Ar{sup +9} implanted and un-implanted Zn{sub 0.95}Mn{sub 0.05}O thin films suitable for electronic application

    Energy Technology Data Exchange (ETDEWEB)

    Neogi, S.K.; Midya, N. [Department of Physics, University of Calcutta, 92 APC Road, Kolkata 700009 (India); Pramanik, P. [Institute of RadioPhysics and Electronics, University of Calcutta, 92 A.P.C. Road, Kolkata 700009 (India); CRNN, University of Calcutta, JB Block, Sector III, Salt Lake, Kolkata 700098 (India); Banerjee, A. [Department of Physics, University of Calcutta, 92 APC Road, Kolkata 700009 (India); CRNN, University of Calcutta, JB Block, Sector III, Salt Lake, Kolkata 700098 (India); Bhattacharyya, A. [Institute of RadioPhysics and Electronics, University of Calcutta, 92 A.P.C. Road, Kolkata 700009 (India); Taki, G.S. [Variable Energy Cyclotron Centre, 1/AF, Salt Lake, Kolkata 700064 (India); Krishna, J.B.M. [UGC DAE CSR, Kolkata Centre, LB 8, Sector III, Salt Lake, Kolkata 700098 (India); Bandyopadhyay, S., E-mail: sbaphy@caluniv.ac.in [Department of Physics, University of Calcutta, 92 APC Road, Kolkata 700009 (India); CRNN, University of Calcutta, JB Block, Sector III, Salt Lake, Kolkata 700098 (India)

    2016-06-15

    The structural, morphological, optical and magnetic properties of Ar{sup +9} implanted 5 at% Mn doped ZnO films have been investigated to detect the correlation between ferromagnetism (FM) and defect. Sol–gel derived films were implanted with fluences 0 (un-implanted), 5×10{sup 14} (low), 10{sup 15} (intermediate) and 10{sup 16} (high) ions/cm{sup 2}. Rutherford back scattering (RBS), X-ray diffraction (XRD), atomic force microscope (AFM) and magnetic force microscope (MFM), UV–visible, photoluminescence and X-ray absorption spectroscopy (XAS) and superconducting quantum interference device vibrating sample magnetometer (SQUID VSM) were employed for investigation. XRD indicated single phase nature of the films. Absence of impurity phase has been confirmed from several other measurements also. Ion implantation induces a large concentration of point defects into the films as identified from optical study. All films exhibit intrinsic FM at room temperature (RT). The magnetization attains the maximum for the film implanted with fluence 10{sup 16} ions/cm{sup 2} with saturation magnetization (M{sub S}) value 0.69 emu/gm at RT. Magnetic properties of the films were interpreted using bound magnetic polaron (BMP). BMP generated from the intrinsic exchange interaction of Mn{sup 2+} ions and V{sub Zn} related defects actually controls the FM. The practical utility of these films in transparent spin electronic device has also been exhibited. - Highlights: • Synthesis of transparent 5 at% Mn doped ZnO films was done by sol-gel technique. • Defect induced intrinsic ferromagnetism was observed for Ar{sup 9+} ion implanted films. • The maximum magnetization was attained for highest dose of Ar{sup 9+} implantation. • Zn vacancy may favors intrinsic ferromagnetic ordering. • Intrinsic ferromagnetism was interpreted in terms of bound magnetic polaron model.

  3. The intrinsic gettering in neutron irradiation Czochralski-silicon

    CERN Document Server

    Li Yang Xian; Niu Ping Juan; Liu Cai Chi; Xu Yue Sheng; Yang Deren; Que Duan Lin

    2002-01-01

    The intrinsic gettering in neutron irradiated Czochralski-silicon is studied. The result shows that a denuded zone at the surface of the neutron irradiated Czochralski-silicon wafer may be formed through one-step short-time annealing. The width of the denuded zone is dependent on the annealing temperature and the dose of neutron irradiation, while it is irrelated to the annealing time in case the denuded zone is formed. The authors conclude that the interaction between the defects induced by neutron irradiation and the oxygen in the silicon accelerates the oxygen precipitation in the bulk, and becomes the dominating factor of the quick formation of intrinsic gettering. It makes the effect of thermal history as the secondary factor

  4. Magnetoencephalography signals are influenced by skull defects.

    Science.gov (United States)

    Lau, S; Flemming, L; Haueisen, J

    2014-08-01

    Magnetoencephalography (MEG) signals had previously been hypothesized to have negligible sensitivity to skull defects. The objective is to experimentally investigate the influence of conducting skull defects on MEG and EEG signals. A miniaturized electric dipole was implanted in vivo into rabbit brains. Simultaneous recording using 64-channel EEG and 16-channel MEG was conducted, first above the intact skull and then above a skull defect. Skull defects were filled with agar gels, which had been formulated to have tissue-like homogeneous conductivities. The dipole was moved beneath the skull defects, and measurements were taken at regularly spaced points. The EEG signal amplitude increased 2-10 times, whereas the MEG signal amplitude reduced by as much as 20%. The EEG signal amplitude deviated more when the source was under the edge of the defect, whereas the MEG signal amplitude deviated more when the source was central under the defect. The change in MEG field-map topography (relative difference measure, RDM(∗)=0.15) was geometrically related to the skull defect edge. MEG and EEG signals can be substantially affected by skull defects. MEG source modeling requires realistic volume conductor head models that incorporate skull defects. Copyright © 2013 International Federation of Clinical Neurophysiology. Published by Elsevier Ireland Ltd. All rights reserved.

  5. Instrinsic defect energies of lithium hydride and lithium deuteride crystals

    International Nuclear Information System (INIS)

    Pandey, R.; Stoneham, A.M.

    1985-01-01

    A theoretical study has been made of the defect structure of lithium hydride and lithium deuteride. A potential model is obtained describing the statics and dynamics of these crystals. Intrinsic defect energies are calculated using the Harwell HADES program which is based on a generalised Mott-Littleton method. The results are in good agreement with the experimental data, and suggest that the vacancy and interstitial migration mechanisms of anions and cations are all comparable in their contribution to ionic conduction. (author)

  6. A detailed model for defect concentration and dopant activation in ...

    Indian Academy of Sciences (India)

    Unknown

    We have also included Si and related defects when this element is implanted as an n-type dopant. All these defects are considered in several charge states allowed by their stability conditions. The model assumes thermodynamic equilibrium between the point defects at an anneal temperature. Then the GaAs wafer.

  7. New intrinsic-colour calibration for uvby- β photometry

    Science.gov (United States)

    Karataş, Yüksel; Schuster, William J.

    2010-07-01

    A new intrinsic-colour calibration ((b-y)o-β) is presented for the uvby- β photometric system, making use of re-calibrated Hipparcos parallaxes and published reddening maps. This new calibration for (b-y)o-β, our Eq. (1), has been based upon stars with dHipFIES/NOT databases, without detectable Na I lines, the average reddening value =-0.001±0.002 shows that any zero-point correction to our intrinsic-colour equation must be minuscule.

  8. Intrinsic nonadiabatic topological torque in magnetic skyrmions and vortices

    KAUST Repository

    Akosa, Collins Ashu

    2017-03-01

    We propose that topological spin currents flowing in topologically nontrivial magnetic textures, such as magnetic skyrmions and vortices, produce an intrinsic nonadiabatic torque of the form Tt∼[(∂xm×∂ym)·m]∂ym. We show that this torque, which is absent in one-dimensional domain walls and/or nontopological textures, is responsible for the enhanced nonadiabaticity parameter observed in magnetic vortices compared to one-dimensional textures. The impact of this torque on the motion of magnetic skyrmions is expected to be crucial, especially to determine their robustness against defects and pinning centers.

  9. Role of Microstructure and Surface Defects on the Dissolution Kinetics of CeO2, a UO2 Fuel Analogue.

    Science.gov (United States)

    Corkhill, Claire L; Bailey, Daniel J; Tocino, Florent Y; Stennett, Martin C; Miller, James A; Provis, John L; Travis, Karl P; Hyatt, Neil C

    2016-04-27

    The release of radionuclides from spent fuel in a geological disposal facility is controlled by the surface mediated dissolution of UO2 in groundwater. In this study we investigate the influence of reactive surface sites on the dissolution of a synthesized CeO2 analogue for UO2 fuel. Dissolution was performed on the following: CeO2 annealed at high temperature, which eliminated intrinsic surface defects (point defects and dislocations); CeO2-x annealed in inert and reducing atmospheres to induce oxygen vacancy defects and on crushed CeO2 particles of different size fractions. BET surface area measurements were used as an indicator of reactive surface site concentration. Cerium stoichiometry, determined using X-ray Photoelectron Spectroscopy (XPS) and supported by X-ray Diffraction (XRD) analysis, was used to determine oxygen vacancy concentration. Upon dissolution in nitric acid medium at 90 °C, a quantifiable relationship was established between the concentration of high energy surface sites and CeO2 dissolution rate; the greater the proportion of intrinsic defects and oxygen vacancies, the higher the dissolution rate. Dissolution of oxygen vacancy-containing CeO2-x gave rise to rates that were an order of magnitude greater than for CeO2 with fewer oxygen vacancies. While enhanced solubility of Ce(3+) influenced the dissolution, it was shown that replacement of vacancy sites by oxygen significantly affected the dissolution mechanism due to changes in the lattice volume and strain upon dissolution and concurrent grain boundary decohesion. These results highlight the significant influence of defect sites and grain boundaries on the dissolution kinetics of UO2 fuel analogues and reduce uncertainty in the long term performance of spent fuel in geological disposal.

  10. Nanocarbon: Defect Architectures and Properties

    Science.gov (United States)

    Vuong, Amanda

    The allotropes of carbon make its solid phases amongst the most diverse of any element. It can occur naturally as graphite and diamond, which have very different properties that make them suitable for a wide range of technological and commercial purposes. Recent developments in synthetic carbon include Highly Oriented Pyrolytic Graphite (HOPG) and nano-carbons, such as fullerenes, nanotubes and graphene. The main industrial application of bulk graphite is as an electrode material in steel production, but in purified nuclear graphite form, it is also used as a moderator in Advanced Gas-cooled Reactors across the United Kingdom. Both graphene and graphite are damaged over time when subjected to bombardment by electrons, neutrons or ions, and these have a wide range of effects on their physical and electrical properties, depending on the radiation flux and temperature. This research focuses on intrinsic defects in graphene and dimensional change in nuclear graphite. The method used here is computational chemistry, which complements physical experiments. Techniques used comprise of density functional theory (DFT) and molecular dynamics (MD), which are discussed in chapter 2 and chapter 3, respectively. The succeeding chapters describe the results of simulations performed to model defects in graphene and graphite. Chapter 4 presents the results of ab initio DFT calculations performed to investigate vacancy complexes that are formed in AA stacked bilayer graphene. In AB stacking, carbon atoms surrounding the lattice vacancies can form interlayer structures with sp2 bonding that are lower in energy compared to in-plane reconstructions. From the investigation of AA stacking, sp2 interlayer bonding of adjacent multivacancy defects in registry creates a type of stable sp2 bonded wormhole between the layers. Also, a new class of mezzanine structure characterised by sp3 interlayer bonding, resembling a prismatic vacancy loop has also been identified. The mezzanine, which is a

  11. Thermodynamics and transport of ionic and electronic defects in crystaline oxides

    NARCIS (Netherlands)

    Lankhorst, M.H.R.; Lankhorst, Martijn H.R.; Bouwmeester, Henricus J.M.; Verweij, H.

    1997-01-01

    The first part of this article concerns the thermodynamics of point defects. In the traditional analysis of reactions in which point defects are involved, point defects are assumed to be ideally diluted, which leads to familiar mass-action-type equations. In this article, situations in which

  12. Detecting Nosocomial Intrinsic Infections through Relating Bacterial ...

    African Journals Online (AJOL)

    Sierra Leone Journal of Biomedical Research ... Surgical procedures often lead to both intrinsic and extrinsic infections. ... This study demonstrated surgical procedures as precursory to intrinsic infections and that bacterial pathogens found on wounds and endogenous indicators of surgery are links to intrinsic infection.

  13. Terminal twist-induced writhe of DNA with intrinsic curvature.

    Science.gov (United States)

    Hu, Kai

    2007-04-01

    Supercoiling of a closed circular DNA rod may result from an application of terminal twist to the DNA rod by cutting the rod, rotating one of the cut faces as the other being fixed and then sealing the cut. According to White's formula, DNA supercoiling is probably accompanied by a writhe of the DNA axis. Deduced from the elastic rod model for DNA structure, an intrinsically straight closed circular DNA rod does not writhe as subject to a terminal twist, until the number of rotation exceeds a rod-dependent threshold. By contrast, a closed circular DNA rod with intrinsic curvature writhes instantly as subject to a terminal twist. This noteworthy character in fact belongs to many intrinsically curved DNA rods. By solving the dynamic equations, the linearization of the Euler-Lagrange equations governing intrinsically curved DNA rods, this paper shows that almost every clamped-end intrinsically curved DNA rod writhes instantly when subject to a terminal twist (clamped-end DNA rods include closed circular DNA rods and topological domains of open DNA rods). In terms of physical quantities, the exceptions are identified with points in R(6) whose projections onto R(5) (through ignoring the total energy density of a rod) form a subset of a quadratic hypersurface. This paper also suggests that the terminal twist induced writhe is due to the elasticity and the clamped-end boundary conditions of the DNA rods.

  14. Structural vs. intrinsic carriers: contrasting effects of cation chemistry and disorder on ionic conductivity in pyrochlores

    International Nuclear Information System (INIS)

    Perriot, Romain; Uberuaga, Blas P.

    2015-01-01

    We use molecular dynamics simulations to investigate the role of cation disorder on oxygen diffusion in Gd 2 Zr 2 O 7 (GZO) and Gd 2 Ti 2 O 7 (GTO) pyrochlores, a class of complex oxides which contain a structural vacancy relative to the basic fluorite structure. The introduction of disorder has distinct effects depending on the chemistry of the material, increasing the mobility of structural carriers by up to four orders of magnitude in GZO. In contrast, in GTO, there is no mobility at zero or low disorder on the ns timescale, but higher disorder liberates the otherwise immobile carriers, allowing diffusion with rates comparable to GZO for the fully disordered material. Here, we show that the cation disorder enhances the diffusivity by both increasing the concentration of mobile structural carriers and their individual mobility. The disorder also influences the diffusion in materials containing intrinsic carriers, such as additional vacancies VO or oxygen interstitials OI. And while in ordered GZO and GTO the contribution of the intrinsic carriers dominates the overall diffusion of oxygen, OI in GZO contributes along with structural carriers, and the total diffusion rate can be calculated by assuming simple additive contributions from the two sources. Although the disorder in the materials with intrinsic defects usually enhances the diffusivity as in the defect-free case, in low concentrations, cation antisites AB or BA, where A = Gd and B = Zr or Ti, can act as traps for fast intrinsic defects. The trapping results in a lowering of the diffusivity, and causes a non-monotonic behavior of the diffusivity with disorder. Conversely, in the case of slow intrinsic defects, the main effect of the disorder is to liberate the structural carriers, resulting in an increase of the diffusivity regardless of the defect trapping.

  15. Defect of the Eyelids.

    Science.gov (United States)

    Lu, Guanning Nina; Pelton, Ron W; Humphrey, Clinton D; Kriet, John David

    2017-08-01

    Eyelid defects disrupt the complex natural form and function of the eyelids and present a surgical challenge. Detailed knowledge of eyelid anatomy is essential in evaluating a defect and composing a reconstructive plan. Numerous reconstructive techniques have been described, including primary closure, grafting, and a variety of local flaps. This article describes an updated reconstructive ladder for eyelid defects that can be used in various permutations to solve most eyelid defects. Copyright © 2017 Elsevier Inc. All rights reserved.

  16. On the intrinsic gettering in Cu-contaminated Cz-Si

    International Nuclear Information System (INIS)

    Schmalz, K.; Kirscht, F.G.; Babanskaja, I.; Kittler, M.; Richter, H.; Seifert, W.

    1985-01-01

    NAA, TEM, DLTS, and EBIC investigations of Cu-contaminated Cz-Si with an intrinsic-gettering procedure realized by a multistep heat treatment demonstrate the efficiency of intrinsic gettering concerning redistribution to volume defects for Cu-contamination up to 10 16 cm -3 . The Cu-precipitation at the surface can still be suppressed for such contamination due to volume defects. However, in this case the concentration of contamination induced deep level centers at the surface is independent of the volume defect density. Only for Cu-contamination of about 10 15 cm -3 the gettering effect is strong enough to prevent the introduction of contamination induced deep levels at the surface. (author)

  17. Analysis of the defect clusters in congruent lithium tantalate

    Science.gov (United States)

    Vyalikh, Anastasia; Zschornak, Matthias; Köhler, Thomas; Nentwich, Melanie; Weigel, Tina; Hanzig, Juliane; Zaripov, Ruslan; Vavilova, Evgenia; Gemming, Sibylle; Brendler, Erica; Meyer, Dirk C.

    2018-01-01

    A wide range of technological applications of lithium tantalate (LT) is closely related to the defect chemistry. In literature, several intrinsic defect models have been proposed. Here, using a combinational approach based on DFT and solid-state NMR, we demonstrate that distribution of electric field gradients (EFGs) can be employed as a fingerprint of a specific defect configuration. Analyzing the distribution of 7Li EFGs, the FT-IR and electron spin resonance (ESR) spectra, and the 7Li spin-lattice relaxation behavior, we have found that the congruent LT samples provided by two manufacturers show rather different defect concentrations and distributions although both were grown by the Czochralski method. After thermal treatment hydrogen out-diffusion and homogeneous distribution of other defects have been observed by ESR, NMR, and FT-IR. The defect structure in one of two congruent LT crystals after annealing has been identified and proved by defect formation energy considerations, whereas the more complex defect configuration, including the presence of extrinsic defects, has been suggested for the other LT sample. The approach of searching the EFG fingerprints from DFT calculations in NMR spectra can be applied for identifying the defect clusters in other complex oxides.

  18. Topological defect dynamics in operando battery nanoparticles

    Science.gov (United States)

    Ulvestad, Andrew; Meng, Shirley; Shpyrko, Oleg

    2015-03-01

    Topological defects are ubiquitous in physics and manifest themselves as magnetic monopoles in quantum field theories and crystallographic imperfections in condensed matter systems. In the latter, the defect properties determine many of the material's properties and as such represent substantial novel opportunities for design and optimization of desired functionalities through deliberate defect engineering and manipulation. However, this approach of ``defect choreography'' currently suffers from the lack of suitable nanoscale probes to track buried single defects in-situ and in-operando. Here we report 3D imaging of single edge dislocations and their motion in an individual nanoparticle under operando conditions in a Lithium ion battery. We further observe the dislocation act as a nucleation point during the structural phase transformation. We find that the region near the dislocation enters a negative Poisson's ratio, or auxetic, regime at high voltage. Dislocation imaging is thus a powerful nanotechnology and it opens a new, powerful avenue for facilitating improvement of nanostructured devices.

  19. Intrinsically secure fast reactors with dense cores

    International Nuclear Information System (INIS)

    Slessarev, Igor

    2007-01-01

    Secure safety, resistance to weapons material proliferation and problems of long-lived wastes remain the most important 'painful points' of nuclear power. Many innovative reactor concepts have been developed aimed at a radical enhancement of safety. The promising potential of innovative nuclear reactors allows for shifting accents in current reactor safety 'strategy' to reveal this worth. Such strategy is elaborated focusing on the priority for intrinsically secure safety features as well as on sure protection being provided by the first barrier of defence. Concerning the potential of fast reactors (i.e. sodium cooled, lead-cooled, etc.), there are no doubts that they are able to possess many favourable intrinsically secure safety features and to lay the proper foundation for a new reactor generation. However, some of their neutronic characteristics have to be radically improved. Among intrinsically secure safety properties, the following core parameters are significantly important: reactivity margin values, reactivity feed-back and coolant void effects. Ways of designing intrinsically secure safety features in fast reactors (titled hereafter as Intrinsically Secure Fast Reactors - ISFR) can be found in the frame of current reactor technologies by radical enhancement of core neutron economy and by optimization of core compositions. Simultaneously, respecting resistance to proliferation, by using non-enriched fuel feed as well as a core breeding gain close to zero, are considered as the important features (long-lived waste problems will be considered in a separate paper). This implies using the following reactor design options as well as closed fuel cycles with natural U as the reactor feed: ·Ultra-plate 'dense cores' of the ordinary (monolithic) type with negative total coolant void effects. ·Modular type cores. Multiple dense modules can be embedded in the common reflector for achieving the desired NPP total power. The modules can be used also independently (as

  20. Intrinsic cylindrical and spherical waves

    International Nuclear Information System (INIS)

    Ludlow, I K

    2008-01-01

    Intrinsic waveforms associated with cylindrical and spherical Bessel functions are obtained by eliminating the factors responsible for the inverse radius and inverse square radius laws of wave power per unit area of wavefront. The resulting expressions are Riccati-Bessel functions for both cases and these can be written in terms of amplitude and phase functions of order v and wave variable z. When z is real, it is shown that a spatial phase angle of the intrinsic wave can be defined and this, together with its amplitude function, is systematically investigated for a range of fixed orders and varying z. The derivatives of Riccati-Bessel functions are also examined. All the component functions exhibit different behaviour in the near field depending on the order being less than, equal to or greater than 1/2. Plots of the phase angle can be used to display the locations of the zeros of the general Riccati-Bessel functions and lead to new relations concerning the ordering of the real zeros of Bessel functions and the occurrence of multiple zeros when the argument of the Bessel function is fixed

  1. On holographic defect entropy

    Energy Technology Data Exchange (ETDEWEB)

    Estes, John [Blackett Laboratory, Imperial College,London SW7 2AZ (United Kingdom); Jensen, Kristan [Department of Physics and Astronomy, University of Victoria,Victoria, BC V8W 3P6 (Canada); C.N. Yang Institute for Theoretical Physics, SUNY Stony Brook,Stony Brook, NY 11794-3840 (United States); O’Bannon, Andy [Rudolf Peierls Centre for Theoretical Physics, University of Oxford,1 Keble Road, Oxford OX1 3NP (United Kingdom); Tsatis, Efstratios [8 Kotylaiou Street, Athens 11364 (Greece); Wrase, Timm [Stanford Institute for Theoretical Physics, Stanford University,Stanford, CA 94305 (United States)

    2014-05-19

    We study a number of (3+1)- and (2+1)-dimensional defect and boundary conformal field theories holographically dual to supergravity theories. In all cases the defects or boundaries are planar, and the defects are codimension-one. Using holography, we compute the entanglement entropy of a (hemi-)spherical region centered on the defect (boundary). We define defect and boundary entropies from the entanglement entropy by an appropriate background subtraction. For some (3+1)-dimensional theories we find evidence that the defect/boundary entropy changes monotonically under certain renormalization group flows triggered by operators localized at the defect or boundary. This provides evidence that the g-theorem of (1+1)-dimensional field theories generalizes to higher dimensions.

  2. On holographic defect entropy

    Science.gov (United States)

    Estes, John; Jensen, Kristan; O'Bannon, Andy; Tsatis, Efstratios; Wrase, Timm

    2014-05-01

    We study a number of (3 + 1)- and (2 + 1)-dimensional defect and boundary conformal field theories holographically dual to supergravity theories. In all cases the defects or boundaries are planar, and the defects are codimension-one. Using holography, we compute the entanglement entropy of a (hemi-)spherical region centered on the defect (boundary). We define defect and boundary entropies from the entanglement entropy by an appropriate background subtraction. For some (3 + 1)-dimensional theories we find evidence that the defect/boundary entropy changes monotonically under certain renormalization group flows triggered by operators localized at the defect or boundary. This provides evidence that the g-theorem of (1 + 1)-dimensional field theories generalizes to higher dimensions.

  3. Study of irradiation induced defects in silicon

    International Nuclear Information System (INIS)

    Pal, Gayatri; Sebastian, K.C.; Somayajulu, D.R.S.; Chintalapudi, S.N.

    2000-01-01

    Pure high resistivity (6000 ohm-cm) silicon wafers were recoil implanted with 1.8 MeV 111 In ions. As-irradiated wafers showed a 13 MHz quadrupole interaction frequency, which was not observed earlier. The annealing behaviour of these defects in the implanted wafers was studied between room temperature and 1073 K. At different annealing temperatures two more interaction frequencies corresponding to defect complexes D2 and D3 are observed. Even though the experimental conditions were different, these are identical to the earlier reported ones. Based on an empirical point charge model calculation, an attempt is made to identify the configuration of these defect complexes. (author)

  4. Radiation defects in complex perovskite solid solutions

    Energy Technology Data Exchange (ETDEWEB)

    Kuklja, M.M., E-mail: mkukla@nsf.gov [Materials Science and Engineering Dept., University of Maryland, College Park (United States); Kotomin, E.A. [Institute for Solid State Physics, University of Latvia, Riga (Latvia); Max Planck Institute for Solid State Research, Heisenbergstr. 1, 70569 Stuttgart (Germany); Sharia, O. [Materials Science and Engineering Dept., University of Maryland, College Park (United States); Mastrikov, Yu.A. [Materials Science and Engineering Dept., University of Maryland, College Park (United States); Institute for Solid State Physics, University of Latvia, Riga (Latvia); Maier, J. [Max Planck Institute for Solid State Research, Heisenbergstr. 1, 70569 Stuttgart (Germany)

    2014-05-01

    First principles density functional theory (DFT) based modeling is performed to explore formation energies of a series of point cation and oxygen defects, Frenkel and Schottky disorder, as well as structural disorder in Ba{sub 1−x}Sr{sub x}Co{sub 1−y}Fe{sub y}O{sub 3−δ} (BSCF) perovskite solid solutions. The results are compared with previous studies on a prototype SrTiO{sub 3} perovskite. It is shown that BSCF permits accommodation of a high concentration of defects and cation clusters but not antisite defects.

  5. Radiation defects in complex perovskite solid solutions

    Science.gov (United States)

    Kuklja, M. M.; Kotomin, E. A.; Sharia, O.; Mastrikov, Yu. A.; Maier, J.

    2014-05-01

    First principles density functional theory (DFT) based modeling is performed to explore formation energies of a series of point cation and oxygen defects, Frenkel and Schottky disorder, as well as structural disorder in Ba1-xSrxCo1-yFeyO3-δ (BSCF) perovskite solid solutions. The results are compared with previous studies on a prototype SrTiO3 perovskite. It is shown that BSCF permits accommodation of a high concentration of defects and cation clusters but not antisite defects.

  6. Inhibition of Intrinsic Thrombin Generation

    Directory of Open Access Journals (Sweden)

    Thomas W. Stief MD

    2006-01-01

    Full Text Available Background The contact phase of coagulation is of physiologic/pathophysiologic importance, whenever unphysiologic polynegative substances such as cell fragments (microparticles get in contact with blood. There are several clinically used inhibitors of intrinsic thrombin generation. Here the inhibitory concentrations 50% (IC50 of these anticoagulants are measured by the highly specific thrombin generation assay INCA. Methods Unfrozen pooled normal citrated plasma in polystyrole tubes was supplemented at 23°C in duplicate with 0–2 IU/ml low molecular weight heparin (dalteparin, 0–2 IU/ml unfractionated heparin, 0–500 KIU/ml aprotinin, or 0–40 mM arginine. 50 μl plasma or 1 IU/ml thrombin standard were pipetted into a polystyrole microtiter plate with flat bottom. 5 μl SiO 2 /CaCl 2 - reagent (INCA activator were added and after 0–30 min incubation at 37°C 100 μl 2.5 M arginine, pH 8.6, were added; arginine inhibits hemostasis activation and depolymerizes generated fibrin within 20 min at 23°C. The in the physiologic 37°C incubation phase generated thrombin was then chromogenically detected. The intra-assay CV values were < 5%. Results and Discussion The approximate IC50 were 0.01 IU/ml dalteparin, 0.02 IU/ml heparin, 25 KIU/ml aprotinin, and 12 mM arginine. The efficiency of any anticoagulant on intrinsic thrombin generation should be measured for each individual patient. Abbreviations IIa, thrombin; δA, increase in absorbance; APTT, activated partial thromboplastin time; CRT, coagulation reaction time (at 37°C in water-bath; F-wells, polystyrole microtiter plates with flat bottom; IC50, inhibitory concentration 50%; INCA, intrinsic coagulation activity assay; IU, international units; KIU, kallikrein inhibiting unis; LMWH, low molecular weight heparin; mA, milli-absorbance units; PSL, pathromtin SL®; RT, room temperature (23°C; U-wells, polystyrole microtiter plates with round bottom.

  7. The formation of α-phase SnS nanorods by PVP assisted polyol synthesis: Phase stability, micro structure, thermal stability and defects induced energy band transitions

    Energy Technology Data Exchange (ETDEWEB)

    Baby, Benjamin Hudson; Mohan, D. Bharathi, E-mail: d.bharathimohan@gmail.com

    2017-05-01

    We report the formation of single phase of SnS nanostructure through PVP assisted polyol synthesis by varying the source concentration ratio (Sn:S) from 1:1M to 1:12M. The effect of PVP concentration and reaction medium towards the preparation of SnS nanostructure is systematically studied through confocal Raman spectrometer, X-ray diffraction, thermogravimetry analysis, scanning electron microscope, transmission electron microscopy, X-ray photoelectron spectroscopy, UV–Vis–NIR absorption and fluorescence spectrophotometers. The surface morphology of SnS nanostructure changes from nanorods to spherical shape with increasing PVP concentration from 0.15M to 0.5M. Raman analysis corroborates that Raman active modes of different phases of Sn-S are highly active when Raman excitation energy is slightly greater than the energy band gap of the material. The presence of intrinsic defects and large number of grain boundaries resulted in an improved thermal stability of 20 °C during the phase transition of α-SnS. Band gap calculation from tauc plot showed the direct band gap of 1.5 eV which is attributed to the single phase of SnS, could directly meet the requirement of an absorber layer in thin film solar cells. Finally, we proposed an energy band diagram for as synthesized single phase SnS nanostructure based on the experimental results obtained from optical studies showing the energy transitions attributed to band edge transition and also due to the presence of intrinsic defects. - Highlights: • PVP stabilizes the orthorhombic (α) phase of SnS. • Optical band gap of P type SnS tuned by PVP for photovoltaic applications. • The formation of Sn rich SnS phase is investigated through XPS analysis. • Intrinsic defects enhance the thermal stability of α-SnS. • The feasibility of energy transition liable to point defects is discussed.

  8. The electrical properties of indium oxide thin films. In-situ Hall effect measurements to investigate the influence of point defects and grain boundaries; Die elektrischen Eigenschaften von Indiumoxid-Duennschichten. In-situ Hall-Effekt-Messungen zur Aufklaerung des Einflusses von Punktdefekten und Korngrenzen

    Energy Technology Data Exchange (ETDEWEB)

    Frischbier, Mareike

    2015-08-15

    Despite the wide application of indium oxide as transparent conducting material, basic mechanisms of its high conductivity are not understood yet. However, indium is scarce and the development of alternative materials for indium oxide is necessary. This requires a detailed understanding of the conductivity mechanisms. The electrical conductivity of undoped and doped indium oxide is given by defects. Thus, the influence of point defects and grain boundaries in sputtered indium oxide thin films is investigated here. This dissertation contributes to a more profound understanding of the conductivity mechanisms of indium oxide: grain boundary scattering is identified as the most important limiting scattering mechanism and the influence of doping elements on this property is shown. Dominant point defects in oxide materials are commonly investigated in literature by conductivity relaxation measurements depending on oxygen partial pressure. Usually, carrier mobility is assumed to be constant when analysing the results. However, this assumption is incorrect and can lead to a misinterpretation of data. Therefore, relaxation measurements are conducted as part of this dissertation to directly measure charge carrier concentration and mobility for the first time. For this purpose, a new experimental setup has been developed which enables measuring the Hall effect in-situ depending on oxygen partial pressure, temperature and total pressure. Relaxation measurements are conducted as part of this dissertation to show that charge carrier mobility is not constant, but strongly depends on carrier concentration. Further measurements verify that the scattering of charge carriers at grain boundaries is one main reason. In addition, the influence of deposition parameters of the sputter deposition process and doping (dopant element and concentration) on carrier concentration and mobility at room temperature is studied. The experimental results show that the doping elements influence both

  9. Intrinsic rotation with gyrokinetic models

    International Nuclear Information System (INIS)

    Parra, Felix I.; Barnes, Michael; Catto, Peter J.; Calvo, Iván

    2012-01-01

    The generation of intrinsic rotation by turbulence and neoclassical effects in tokamaks is considered. To obtain the complex dependences observed in experiments, it is necessary to have a model of the radial flux of momentum that redistributes the momentum within the tokamak in the absence of a preexisting velocity. When the lowest order gyrokinetic formulation is used, a symmetry of the model precludes this possibility, making small effects in the gyroradius over scale length expansion necessary. These effects that are usually small become important for momentum transport because the symmetry of the lowest order gyrokinetic formulation leads to the cancellation of the lowest order momentum flux. The accuracy to which the gyrokinetic equation needs to be obtained to retain all the physically relevant effects is discussed.

  10. Defect spectroscopy of single ZnO microwires

    Science.gov (United States)

    Villafuerte, M.; Ferreyra, J. M.; Zapata, C.; Barzola-Quiquia, J.; Iikawa, F.; Esquinazi, P.; Heluani, S. P.; de Lima, M. M.; Cantarero, A.

    2014-04-01

    The point defects of single ZnO microwires grown by carbothermal reduction were studied by microphotoluminescence, photoresistance excitation spectra, and resistance as a function of the temperature. We found the deep level defect density profile along the microwire showing that the concentration of defects decreases from the base to the tip of the microwires and this effect correlates with a band gap narrowing. The results show a characteristic deep defect levels inside the gap at 0.88 eV from the top of the VB. The resistance as a function of the temperature shows defect levels next to the bottom of the CB at 110 meV and a mean defect concentration of 4 × 1018 cm-3. This combination of techniques allows us to study the band gap values and defects states inside the gap in single ZnO microwires and opens the possibility to be used as a defect spectroscopy method.

  11. Defects of mitochondrial DNA replication.

    Science.gov (United States)

    Copeland, William C

    2014-09-01

    Mitochondrial DNA is replicated by DNA polymerase γ in concert with accessory proteins such as the mitochondrial DNA helicase, single-stranded DNA binding protein, topoisomerase, and initiating factors. Defects in mitochondrial DNA replication or nucleotide metabolism can cause mitochondrial genetic diseases due to mitochondrial DNA deletions, point mutations, or depletion, which ultimately cause loss of oxidative phosphorylation. These genetic diseases include mitochondrial DNA depletion syndromes such as Alpers or early infantile hepatocerebral syndromes, and mitochondrial DNA deletion disorders, such as progressive external ophthalmoplegia, ataxia-neuropathy, or mitochondrial neurogastrointestinal encephalomyopathy. This review focuses on our current knowledge of genetic defects of mitochondrial DNA replication (POLG, POLG2, C10orf2, and MGME1) that cause instability of mitochondrial DNA and mitochondrial disease. © The Author(s) 2014.

  12. Understanding and Calibrating Density-Functional-Theory Calculations Describing the Energy and Spectroscopy of Defect Sites in Hexagonal Boron Nitride.

    Science.gov (United States)

    Reimers, Jeffrey R; Sajid, A; Kobayashi, Rika; Ford, Michael J

    2018-03-13

    Defect states in 2-D materials present many possible uses but both experimental and computational characterization of their spectroscopic properties is difficult. We provide and compare results from 13 DFT and ab initio computational methods for up to 25 excited states of a paradigm system, the V N C B defect in hexagonal boron nitride (h-BN). Studied include: (i) potentially catastrophic effects for computational methods arising from the multireference nature of the closed-shell and open-shell states of the defect, which intrinsically involves broken chemical bonds, (ii) differing results from DFT and time-dependent DFT (TDDFT) calculations, (iii) comparison of cluster models to periodic-slab models of the defect, (iv) the starkly differing effects of nuclear relaxation on the various electronic states that control the widths of photoabsorption and photoemission spectra as broken bonds try to heal, (v) the effect of zero-point energy and entropy on free-energy differences, (vi) defect-localized and conduction/valence-band transition natures, and (vii) strategies needed to ensure that the lowest-energy state of a defect can be computationally identified. Averaged state-energy differences of 0.3 eV are found between CCSD(T) and MRCI energies, with thermal effects on free energies sometimes also being of this order. However, DFT-based methods can perform very poorly. Simple generalized-gradient functionals like PBE fail at the most basic level and should never be applied to defect states. Hybrid functionals like HSE06 work very well for excitations within the triplet manifold of the defect, with an accuracy equivalent to or perhaps exceeding the accuracy of the ab initio methods used. However, HSE06 underestimates triplet-state energies by on average of 0.7 eV compared to closed-shell singlet states, while open-shell singlet states are predicted to be too low in energy by 1.0 eV. This leads to misassignment of the ground state of the V N C B defect. Long

  13. Tipping Point

    Medline Plus

    Full Text Available ... en español Blog About OnSafety CPSC Stands for Safety The Tipping Point Home > 60 Seconds of Safety (Videos) > The Tipping Point The Tipping Point by ... danger death electrical fall furniture head injury product safety television tipover tv Watch the video in Adobe ...

  14. Selected topics in high temperature chemistry defect chemistry of solids

    CERN Document Server

    Johannesen, Ø

    2013-01-01

    The properties of materials at high temperature play a vital role in their processing and practical use. The real properties of materials at elevated temperatures are very often governed by defects in their structure. Lattice defects may consist of point defects like vacancies, interstitial atoms or substituted atoms. These classes are discussed in general and specifically for oxides, nitrides, carbides and sulfides. Defect aggregates, shear structures and adaptive structures are also described. Special attention is paid to hydrogen defects which seem to play an important role in several mater

  15. Incentives and intrinsic motivation in healthcare

    Directory of Open Access Journals (Sweden)

    Mikel Berdud

    2016-11-01

    Conclusions: The conclusions could act as a guide to support the optimal design of incentive policies and schemes within health organisations when healthcare professionals are intrinsically motivated.

  16. Algebraic description of intrinsic modes in nuclei

    Energy Technology Data Exchange (ETDEWEB)

    Leviatan, A. (Los Alamos National Lab., NM (USA))

    1990-01-01

    We present a procedure for extracting normal modes in algebraic number-conserving systems of interacting bosons relevant for collective states in even-even nuclei. The Hamiltonian is resolved into intrinsic (bandhead related) and collective (in-band related) parts. Shape parameters are introduced through non-spherical boson bases. Intrinsic modes decoupled from the spurious modes are obtained from the intrinsic part of the Hamiltonian in the limit of large number of bosons. Intrinsic states are constructed and serve to evaluate electromagnetic transition rates. The method is illustrated for systems with one type of boson as well as with proton-neutron bosons. (author).

  17. Algebraic description of intrinsic modes in nuclei

    International Nuclear Information System (INIS)

    Leviatan, A.

    1990-01-01

    We present a procedure for extracting normal modes in algebraic number-conserving systems of interacting bosons relevant for collective states in even-even nuclei. The Hamiltonian is resolved into intrinsic (bandhead related) and collective (in-band related) parts. Shape parameters are introduced through non-spherical boson bases. Intrinsic modes decoupled from the spurious modes are obtained from the intrinsic part of the Hamiltonian in the limit of large number of bosons. Intrinsic states are constructed and serve to evaluate electromagnetic transition rates. The method is illustrated for systems with one type of boson as well as with proton-neutron bosons. (author)

  18. Diffusion Mechanisms and Lattice Locations of Thermal-Equilibrium Defects in Si-Ge Alloys

    CERN Multimedia

    Lyutovich, K; Touboltsev, V; Laitinen, P O; Strohm, A

    2002-01-01

    It is generally accepted that Ge and Si differ considerably with respect to intrinsic-point-defect-mediated diffusion. In Ge, the native point defects dominating under thermal-equilibium conditions at all solid-state temperatures accessible in diffusion experiments are vacancies, and therefore Ge self-diffusion is vacancy-controlled. In Si, by contrast, self-interstitials and vacancies co-exist in thermal equilibrium. Whereas in the most thoroughly investigated temperature regime above about 1000$^\\circ$C Si self-diffusion is self-interstitial-controlled, it is vacancy-controlled at lower temperatures. According to the scenario displayed above, self-diffusion in Si-Ge alloys is expected to change from an interstitialcy mechanism on the Si side to a vacancy mechanism on the Ge side. Therefore, $^{71}$Ge self-diffusion experiments in Si$_{1- \\it y}$Ge$_{\\it y}$ as a function of composition Y are highly interesting. In a first series of experiments the diffusion of Ge in 0.4 to 10 $\\mu$m thick, relaxed, low-disl...

  19. Defect study of Cu2ZnSn(SxSe1-x)4 thin film absorbers using photoluminescence and modulated surface photovoltage spectroscopy

    Science.gov (United States)

    Lin, Xianzhong; Ennaoui, Ahmed; Levcenko, Sergiu; Dittrich, Thomas; Kavalakkatt, Jaison; Kretzschmar, Steffen; Unold, Thomas; Lux-Steiner, Martha Ch.

    2015-01-01

    Defect states in Cu2ZnSn(SxSe1-x)4 thin films with x = 0.28, 0.36, and 1 were studied by combining photoluminescence (PL) and modulated surface photovoltage (SPV) spectroscopy. A single broad band emission in the PL spectra was observed and can be related to quasi-donor-acceptor pair transitions. The analysis of the temperature dependent quenching of the PL band (x = 0.28, 0.36, and 1) and SPV (x = 0.28) signals resulted in activation energies below 150 meV for PL and about 90 and 300 meV for SPV. Possible intrinsic point defects that might be associated with these observed activation energies are discussed.

  20. Concentration of constitutional and thermal defects in UAl{sub 4}

    Energy Technology Data Exchange (ETDEWEB)

    Gargano, P.H.; Kniznik, L.; Alonso, P.R.; Forti, M.D. [Gerencia Materiales, Comisión Nacional de Energía Atómica, Av. Gral. Paz 1499, 1650, San Martín, Buenos Aires (Argentina); Instituto de Tecnología J. Sabato, CNEA - UNSAM, Av. Gral. Paz 1499, 1650, San Martín, Buenos Aires (Argentina); Rubiolo, G.H., E-mail: rubiolo@cnea.gov.ar [Gerencia Materiales, Comisión Nacional de Energía Atómica, Av. Gral. Paz 1499, 1650, San Martín, Buenos Aires (Argentina); Instituto de Tecnología J. Sabato, CNEA - UNSAM, Av. Gral. Paz 1499, 1650, San Martín, Buenos Aires (Argentina); CONICET, Av. Rivadavia 1917, 1033, CABA (Argentina)

    2016-09-15

    The point defect structure of intermetallic compound oI20 UAl{sub 4} is investigated using a combination of the statistical mechanical Wagner–Schottky model and first-principles calculations within a projector augmented wave pseudopotential method in conjunction with the generalized gradient approximation. The formation energies of eight point defects were calculated taking into account the four sublattices. The point defect concentrations are calculated as function of temperature and deviation from stoichiometry. Our results show that the aluminum antisite is the constitutional point defect on the Al-rich side. At this off-stoichiometric side the dominant thermal defect is an interbranch defect where four constitutional antisite aluminum atoms are replaced by five uranium vacancies. The point defect effective formation energies are obtained and these results allow us to identify the antistructure bridge mechanism as the most probable for the diffusion for Al atoms in the Al-rich UAl{sub 4} intermetallic compound. - Highlights: • Formation energies of eight point defects in the four sublattices were calculated. • Point defect concentrations were calculated as function of temperature and stoichiometry. • The aluminum antisite is the constitutional point defect on the Al-rich side. • On the Al-rich side, the dominant thermal defect is an interbranch defect. • On the Al-rich side, Al atoms probably diffuse by the antisite bridge mechanism.

  1. Protein intrinsic disorder in plants.

    Science.gov (United States)

    Pazos, Florencio; Pietrosemoli, Natalia; García-Martín, Juan A; Solano, Roberto

    2013-09-12

    To some extent contradicting the classical paradigm of the relationship between protein 3D structure and function, now it is clear that large portions of the proteomes, especially in higher organisms, lack a fixed structure and still perform very important functions. Proteins completely or partially unstructured in their native (functional) form are involved in key cellular processes underlain by complex networks of protein interactions. The intrinsic conformational flexibility of these disordered proteins allows them to bind multiple partners in transient interactions of high specificity and low affinity. In concordance, in plants this type of proteins has been found in processes requiring these complex and versatile interaction networks. These include transcription factor networks, where disordered proteins act as integrators of different signals or link different transcription factor subnetworks due to their ability to interact (in many cases simultaneously) with different partners. Similarly, they also serve as signal integrators in signaling cascades, such as those related to response to external stimuli. Disordered proteins have also been found in plants in many stress-response processes, acting as protein chaperones or protecting other cellular components and structures. In plants, it is especially important to have complex and versatile networks able to quickly and efficiently respond to changing environmental conditions since these organisms cannot escape and have no other choice than adapting to them. Consequently, protein disorder can play an especially important role in plants, providing them with a fast mechanism to obtain complex, interconnected and versatile molecular networks.

  2. Protein intrinsic disorder in plants

    Directory of Open Access Journals (Sweden)

    Florencio ePazos

    2013-09-01

    Full Text Available To some extent contradicting the classical paradigm of the relationship between protein 3D structure and function, now it is clear that large portions of the proteomes, especially in higher organisms, lack a fixed structure and still perform very important functions. Proteins completely or partially unstructured in their native (functional form are involved in key cellular processes underlain by complex networks of protein interactions. The intrinsic conformational flexibility of these disordered proteins allows them to bind multiple partners in transient interactions of high specificity and low affinity. In concordance, in plants this type of proteins has been found in processes requiring these complex and versatile interaction networks. These include transcription factor networks, where disordered proteins act as integrators of different signals or link different transcription factor subnetworks due to their ability to interact (in many cases simultaneously with different partners. Similarly, they also serve as signal integrators in signalling cascades, such as those related to response to external stimuli. Disordered proteins have also been found in plants in many stress-response processes, acting as protein chaperones or protecting other cellular components and structures. In plants, it is especially important to have complex and versatile networks able to quickly and efficiently respond to changing environmental conditions since these organisms can not escape and have no other choice than adapting to them. Consequently, protein disorder can play an especially important role in plants, providing them with a fast mechanism to obtain complex, interconnected and versatile molecular networks.

  3. Role of point defects in bipolar fatigue behavior of Bi(Mg{sub 1/2}Ti{sub 1/2})O{sub 3} modified (Bi{sub 1/2}K{sub 1/2})TiO{sub 3}-(Bi{sub 1/2}Na{sub 1/2})TiO{sub 3} relaxor ceramics

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, Nitish, E-mail: nitishkumar.iitk@gmail.com; Ansell, Troy Y.; Cann, David P. [Materials Science, School of Mechanical, Industrial, and Manufacturing Engineering, Oregon State University, Corvallis, Oregon 97331 (United States)

    2014-04-21

    Lead-free Bi(Mg{sub 1/2}Ti{sub 1/2})O{sub 3}-(Bi{sub 1/2}K{sub 1/2})TiO{sub 3}-(Bi{sub 1/2}Na{sub 1/2})TiO{sub 3} (BMT-BKT-BNT) ceramics have been shown to exhibit large electromechanical strains under high electric fields along with negligible fatigue under strong electric fields. To investigate the role of point defects on the fatigue characteristics, the composition 5BMT-40BKT-55BNT was doped to incorporate acceptor and donor defects on the A and B sites by adjusting the Bi/Na and Ti/Mg stoichiometries. All samples had pseudo-cubic symmetries based on x-ray diffraction, typical of relaxors. Dielectric measurements showed that the high and low temperature phase transitions were largely unaffected by doping. Acceptor doping resulted in the observation of a typical ferroelectric-like polarization with a remnant polarization and strain hysteresis loops with significant negative strain. Donor-doped compositions exhibited characteristics that were indicative of an ergodic relaxor phase. Fatigue measurements were carried out on all of the compositions. While the A-site acceptor-doped composition showed a small degradation in maximum strain after 10{sup 6} cycles, the other compositions were essentially fatigue free. Impedance measurements were used to identify the important conduction mechanisms in these compositions. As expected, the presence of defects did not strongly influence the fatigue behavior in donor-doped compositions owing to the nature of their reversible field-induced phase transformation. Even for the acceptor-doped compositions, which had stable domains in the absence of an electric field at room temperature, there was negligible degradation in the maximum strain due to fatigue. This suggests that either the defects introduced through stoichiometric variations do not play a prominent role in fatigue in these systems or it is compensated by factors like decrease in coercive field, an increase in ergodicity, symmetry change, or other factors.

  4. TRAIL Activates a Caspase 9/7-Dependent Pathway in Caspase 8/10-Defective SK-N-SH Neuroblastoma Cells with Two Functional End Points: Induction of Apoptosis and PGE2 Release

    Directory of Open Access Journals (Sweden)

    Giorgio Zauli

    2003-09-01

    Full Text Available Most neuroblastoma cell lines do not express apical caspases 8 and 10, which play a key role in mediating tumor necrosis factor-related apoptosis-inducing ligand (TRAIL cytotoxicity in a variety of malignant cell types. In this study, we demonstrated that TRAIL induced a moderate but significant increase of apoptosis in the caspase 8/10-deficient SK-N-SH neuroblastoma cell line, through activation of a novel caspase 9/7 pathway. Concomitant to the induction of apoptosis, TRAIL also promoted a significant increase of prostaglandin E2 (PGE2 release by SKN-SH cells. Moreover, coadministration of TRAIL plus indomethacin, a pharmacological inhibitor of cyclooxygenase (COX, showed an additive effect on SKN-SH cell death. In spite of the ability of TRAIL to promote the phosphorylation of both ERKi/2 and p38/MAPK, which have been involved in the control of COX expression/activity, neither PD98059 nor SB203580, pharmacological inhibitors of the ERKi/2 and p38/MAPK pathways, respectively, affected either PGE2 production or apoptosis induced by TRAIL. Finally, both induction of apoptosis and PGE2 release were completely abrogated by the broad caspase inhibitor z-VAD4mk, suggesting that both biologic end points were regulated in SK-N-SH cells through a caspase 9/7-dependent pathway.

  5. Exploring atomic defects in molybdenum disulphide monolayers

    KAUST Repository

    Hong, Jinhua

    2015-02-19

    Defects usually play an important role in tailoring various properties of two-dimensional materials. Defects in two-dimensional monolayer molybdenum disulphide may be responsible for large variation of electric and optical properties. Here we present a comprehensive joint experiment-theory investigation of point defects in monolayer molybdenum disulphide prepared by mechanical exfoliation, physical and chemical vapour deposition. Defect species are systematically identified and their concentrations determined by aberration-corrected scanning transmission electron microscopy, and also studied by ab-initio calculation. Defect density up to 3.5 × 10 13 cm \\'2 is found and the dominant category of defects changes from sulphur vacancy in mechanical exfoliation and chemical vapour deposition samples to molybdenum antisite in physical vapour deposition samples. Influence of defects on electronic structure and charge-carrier mobility are predicted by calculation and observed by electric transport measurement. In light of these results, the growth of ultra-high-quality monolayer molybdenum disulphide appears a primary task for the community pursuing high-performance electronic devices.

  6. Intrinsic Motivation and Achievement in Mathematics in Elementary School: A Longitudinal Investigation of Their Association.

    Science.gov (United States)

    Garon-Carrier, Gabrielle; Boivin, Michel; Guay, Frédéric; Kovas, Yulia; Dionne, Ginette; Lemelin, Jean-Pascal; Séguin, Jean R; Vitaro, Frank; Tremblay, Richard E

    2016-01-01

    This study examined the associations between intrinsic motivation and achievement in mathematics in a sample of 1,478 Canadian school-age children followed from Grades 1 to 4 (ages 7-10). Children self-reported their intrinsic motivation toward mathematics, whereas achievement was measured through direct assessment of mathematics abilities. Cross-lagged models showed that achievement predicted intrinsic motivation from Grades 1 to 2, and from Grades 2 to 4. However, intrinsic motivation did not predict achievement at any time. This developmental pattern of association was gender invariant. Contrary to the hypothesis that motivation and achievement are reciprocally associated over time, our results point to a directional association from prior achievement to subsequent intrinsic motivation. Results are discussed in light of their theoretical and practical implications. © 2015 The Authors. Child Development © 2015 Society for Research in Child Development, Inc.

  7. Defects in hardwood timber

    Science.gov (United States)

    Roswell D. Carpenter; David L. Sonderman; Everette D. Rast; Martin J. Jones

    1989-01-01

    Includes detailed information on all common defects that may aRect hardwood trees and logs. Relationships between manufactured products and those forms of round material to be processed from the tree for conversion into marketable products are discussed. This handbook supersedes Agriculture Handbook No. 244, Grade defects in hardwood timber and logs, by C.R. Lockard, J...

  8. Craniotomy Frontal Bone Defect

    African Journals Online (AJOL)

    2018-03-01

    Mar 1, 2018 ... with cosmetic deformity of fore head (Figure 1), and he claimed that he could not get job because of ... 1: Pre-operative forontal view of patient. Figure 2: Intra operative photography of defect (A) reconstructed defect (B) ... with a cosmetic deformity of forehead on left side. (4nA and B). He was a candidate for.

  9. Holographic entanglement entropy of surface defects

    Energy Technology Data Exchange (ETDEWEB)

    Gentle, Simon A.; Gutperle, Michael; Marasinou, Chrysostomos [Department of Physics and Astronomy, University of California,Los Angeles, CA 90095 (United States)

    2016-04-12

    We calculate the holographic entanglement entropy in type IIB supergravity solutions that are dual to half-BPS disorder-type surface defects in N=4 supersymmetric Yang-Mills theory. The entanglement entropy is calculated for a ball-shaped region bisected by a surface defect. Using the bubbling supergravity solutions we also compute the expectation value of the defect operator. Combining our result with the previously-calculated one-point function of the stress tensor in the presence of the defect, we adapt the calculation of Lewkowycz and Maldacena http://dx.doi.org/10.1007/JHEP05(2014)025 to obtain a second expression for the entanglement entropy. Our two expressions agree up to an additional term, whose possible origin and significance is discussed.

  10. Holographic entanglement entropy of surface defects

    Science.gov (United States)

    Gentle, Simon A.; Gutperle, Michael; Marasinou, Chrysostomos

    2016-04-01

    We calculate the holographic entanglement entropy in type IIB supergravity solutions that are dual to half-BPS disorder-type surface defects in N=4 supersymmetric Yang-Mills theory. The entanglement entropy is calculated for a ball-shaped region bisected by a surface defect. Using the bubbling supergravity solutions we also compute the expectation value of the defect operator. Combining our result with the previously-calculated one-point function of the stress tensor in the presence of the defect, we adapt the calculation of Lewkowycz and Maldacena [1] to obtain a second expression for the entanglement entropy. Our two expressions agree up to an additional term, whose possible origin and significance is discussed.

  11. Holographic entanglement entropy of surface defects

    International Nuclear Information System (INIS)

    Gentle, Simon A.; Gutperle, Michael; Marasinou, Chrysostomos

    2016-01-01

    We calculate the holographic entanglement entropy in type IIB supergravity solutions that are dual to half-BPS disorder-type surface defects in N=4 supersymmetric Yang-Mills theory. The entanglement entropy is calculated for a ball-shaped region bisected by a surface defect. Using the bubbling supergravity solutions we also compute the expectation value of the defect operator. Combining our result with the previously-calculated one-point function of the stress tensor in the presence of the defect, we adapt the calculation of Lewkowycz and Maldacena http://dx.doi.org/10.1007/JHEP05(2014)025 to obtain a second expression for the entanglement entropy. Our two expressions agree up to an additional term, whose possible origin and significance is discussed.

  12. Defects at oxide surfaces

    CERN Document Server

    Thornton, Geoff

    2015-01-01

    This book presents the basics and characterization of defects at oxide surfaces. It provides a state-of-the-art review of the field, containing information to the various types of surface defects, describes analytical methods to study defects, their chemical activity and the catalytic reactivity of oxides. Numerical simulations of defective structures complete the picture developed. Defects on planar surfaces form the focus of much of the book, although the investigation of powder samples also form an important part. The experimental study of planar surfaces opens the possibility of applying the large armoury of techniques that have been developed over the last half-century to study surfaces in ultra-high vacuum. This enables the acquisition of atomic level data under well-controlled conditions, providing a stringent test of theoretical methods. The latter can then be more reliably applied to systems such as nanoparticles for which accurate methods of characterization of structure and electronic properties ha...

  13. LEADERSHIP STYLE AND EMPLOYEES' INTRINSIC JOB ...

    African Journals Online (AJOL)

    Abstract. This study investigates the impact of leadership style on employees' intrinsic job satisfaction in the Cross River State Newspaper Corporation, Calabar,. Nigeria. The study examined the problem of dissatisfaction in the work place as far as intrinsic factors of job satisfaction are concerned. Structured questionnaire ...

  14. Intrinsic bioremediation of landfills interim report

    International Nuclear Information System (INIS)

    Brigmon, R.L.; Fliermans, C.B.

    1997-01-01

    Intrinsic bioremediation is a risk management option that relies on natural biological and physical processes to contain the spread of contamination from a source. Evidence is presented in this report that intrinsic bioremediation is occurring at the Sanitary Landfill is fundamental to support incorportion into a Corrective Action Plan (CAP)

  15. Differential scanning microcalorimetry of intrinsically disordered proteins.

    Science.gov (United States)

    Permyakov, Sergei E

    2012-01-01

    Ultrasensitive differential scanning calorimetry (DSC) is an indispensable thermophysical technique enabling to get direct information on enthalpies accompanying heating/cooling of dilute biopolymer solutions. The thermal dependence of protein heat capacity extracted from DSC data is a valuable source of information on intrinsic disorder level of a protein. Application details and limitations of DSC technique in exploration of protein intrinsic disorder are described.

  16. Intrinsic bioremediation of landfills interim report

    Energy Technology Data Exchange (ETDEWEB)

    Brigmon, R.L. [Westinghouse Savannah River Company, Aiken, SC (United States); Fliermans, C.B.

    1997-07-14

    Intrinsic bioremediation is a risk management option that relies on natural biological and physical processes to contain the spread of contamination from a source. Evidence is presented in this report that intrinsic bioremediation is occurring at the Sanitary Landfill is fundamental to support incorportion into a Corrective Action Plan (CAP).

  17. Tipping Point

    Medline Plus

    Full Text Available ... OnSafety CPSC Stands for Safety The Tipping Point Home > 60 Seconds of Safety (Videos) > The Tipping Point ... 24 hours a day. For young children whose home is a playground, it’s the best way to ...

  18. Fixed Points

    Indian Academy of Sciences (India)

    Home; Journals; Resonance – Journal of Science Education; Volume 5; Issue 5. Fixed Points - From Russia with Love - A Primer of Fixed Point Theory. A K Vijaykumar. Book Review Volume 5 Issue 5 May 2000 pp 101-102. Fulltext. Click here to view fulltext PDF. Permanent link:

  19. Intrinsic self adjointness and the calculus of variations

    International Nuclear Information System (INIS)

    Morsy, M.W.; Embaby, M.

    1986-07-01

    In the present paper, an attempt is made for generalizing the calculus of variations in such a way that the end points are left without being constrained, with the purpose of generating Sturm-Liouville differential operators and the like, that are intrinsically self-adjoint. This approach is not only different from the hermitization prescription, but also more superior in view of the fact that self-adjointness is built in naturally. The proposed generalization of the variational calculus provides an Euler-Lagrange differential equation with a differential boundary term, that is responsible for restoring self-adjointness. In this frame, functionals containing higher order derivatives, and multi-dimensional dependent as well as independent variables which may or may not be subjected to some integral constraints are extremized. As a typical example, the Sturm-Liouville problem is considered, in which intrinsic self adjointness is incorporated. (author)

  20. Breakdown, fractoemission, diffusion: role of defects in dielectrics

    International Nuclear Information System (INIS)

    Vigouroux, J.P.; Serruys, Y.

    1987-01-01

    During the surface analysis of dielectric materials, the impinging ionising particles induce point defects localised in the band gap and build an electrical charge. The electric field created by the charged defects modifies the physico-chemical properties of surface and bulk. We show that the fundamental study of defects allows a better understanding of technological phenomena such as dielectric breakdown, fracture and diffusion [fr

  1. Magnetic signature of surface defects at nanodiamonds

    Energy Technology Data Exchange (ETDEWEB)

    Vollmers, Nora Jenny; Gerstmann, Uwe; Schmidt, Wolf Gero [Theoretische Physik, Universitaet Paderborn (Germany)

    2011-07-01

    The n-type doping of diamond has been a long-standing issue, which recently gained attention in the context of nanodiamonds. Attempts of doping with nitrogen failed to result in the Electron paramagnetic Resonance (EPR) fingerprints expected from bulk material. Instead, the nanodiamond signals show a much larger deviation from the free-electron g-value and are believed to be related to intrinsic, carbon inherited defects. However, the absence of the bulk-like EPR spectra does not mean that nitrogen is not incorporated at all. The N atoms could be built in predominantly at or at least close to the surfaces yielding EPR spectra, very different from those measured in the bulk. In this work, we elucidate the situation by investigating the magnetic signature of paramagnetic defects in the nanodiamonds. We use the gauge-including projector augmented plane wave (GI-PAW) approach to calculate the hyperfine splittings and the elements of the electronic g-tensor. Taking the C(100) surface as a first model system, a possible contribution of nitrogen is discussed by comparing EPR parameters for different N incorporation depths: Incorporated directly at the surface, N gives rise to surface states similar to intrinsic carbon dangling bond-like states. Otherwise N is able to introduce surface conductivity as demonstrated by calculated effective mass tensors.

  2. Workplace ostracism, self-regulation, and job performance: Moderating role of intrinsic work motivation.

    Science.gov (United States)

    Steinbauer, Robert; Renn, Robert W; Chen, H Shawna; Rhew, Nicholas

    2018-01-08

    Drawing from a self-regulation perspective, we examine how intrinsic work motivation changes the relation between workplace ostracism and employee job performance via self-leadership. We test a moderated mediated model with data collected from 101 employees at two points in time. Results provide support for the hypothesis that ostracized employees who are more intrinsically motivated use self-leadership strategies to a greater degree to improve their job performance than their counterparts who are not intrinsically motivated. The findings contribute to research regarding boundary conditions of ostracism theory and have important practical implications.

  3. Altered Neutrophil Function in Localized Juvenile Periodontitis: Intrinsic or Induced?

    Science.gov (United States)

    Agarwal, Sudha; Huang, Jian Ping; Piesco, Nicholas P; Suzuki, Jon B; Riccelli, Angelina E; Johns, Lee P

    1996-03-01

    Localized juvenile periodontitis (LJP) is an aggressive periodontal disease of familial nature. Neutrophils from a majority of patients with this disease exhibit decreased Chemotaxis with increased adherence, oxidative burst, and degranulation in response to opsonized bacteria. It is proposed that the biological basis for these altered neutrophil functions in LJP may be due either to intrinsic cell abnormalities or to the effect of factors present in the sera of LJP patients, which can modulate neutrophil functions. LJP neutrophils exhibit a lower number of receptors for chemoattractants and GP-110 molecules which are known to facilitate Chemotaxis. Furthermore, these cells exhibit lower signal transduction in response to a biological stimulus. These observations suggest that intrinsic cellular defects may be responsible for altered neutrophil functions in LJP. However, healthy neutrophils, when treated with very low concentrations of proinflammatory cytokines, also exhibit the characteristics of altered or "defective" LJP neutrophils. Additionally, healthy neutrophils, when treated with LJP serum, also exhibit many of the characteristics associated with LJP neutrophils. Attempts to identify these factors have shown that cytokines like TNF-α and/or IL1 β in LJP sera may be at least partially responsible for modulating neutrophil functions in LJP. These cytokines are primarily produced by activated macrophages, indicating a role for these cells in the etiology of LJP. The hyper-responsiveness of these cells to an immunologic challenge can result in local increases in cytokines leading to excessive bone loss and tissue damage at the site of infection, while systemic elevations in cytokines would lead to decreased neutrophil Chemotaxis, both of which are observed in LJP. Present evidence indicates that neutrophil functions are indeed altered in the majority of LJP patients. However, the biological basis for the alteration may not be due to the neutrophils themselves

  4. Screening Tests for Birth Defects

    Science.gov (United States)

    ... Advocacy For Patients About ACOG Screening Tests for Birth Defects Home For Patients Search FAQs Screening Tests ... FAQ165, April 2014 PDF Format Screening Tests for Birth Defects Pregnancy What is a birth defect? What ...

  5. Off-stoichiometric silver antimony telluride: An experimental study of transport properties with intrinsic and extrinsic doping

    Directory of Open Access Journals (Sweden)

    Michele D. Nielsen

    2015-05-01

    Full Text Available AgSbTe2 is a thermoelectric semiconductor with an intrinsically low thermal conductivity and a valence band structure that is favorable to obtaining a high thermoelectric figure of merit zT. It also has a very small energy gap Eg ∼ 7.6 ± 3 meV. As this gap is less than the thermal excitation energy at room temperature, near-intrinsic AgSbTe2 is a two carrier system having both holes (concentration p and electrons (n. Good thermoelectric performance requires heavy p-type doping (p > > n. This can be achieved with native defects or with extrinsic doping, e.g. with transition metal element. The use of defect doping is complicated by the fact that many of the ternary Ag-Sb-Te and pseudo-binary Sb2Te3-Ag2Te phase diagrams are contradictory. This paper determines the compositional region most favorable to creating a single phase material. Through a combination of intrinsic and extrinsic doping, values of zT > 1 are achieved, though not on single-phased material. Additionally, we show that thermal conductivity is not affected by defects, further demonstrating that the low lattice thermal conductivity of I-V-VI2 materials is due to an intrinsic mechanism, insensitive to changes in defect structure.

  6. Intrinsic half-metallicity in fractal carbon nitride honeycomb lattices.

    Science.gov (United States)

    Wang, Aizhu; Zhao, Mingwen

    2015-09-14

    Fractals are natural phenomena that exhibit a repeating pattern "exactly the same at every scale or nearly the same at different scales". Defect-free molecular fractals were assembled successfully in a recent work [Shang et al., Nature Chem., 2015, 7, 389-393]. Here, we adopted the feature of a repeating pattern in searching two-dimensional (2D) materials with intrinsic half-metallicity and high stability that are desirable for spintronics applications. Using first-principles calculations, we demonstrate that the electronic properties of fractal frameworks of carbon nitrides have stable ferromagnetism accompanied by half-metallicity, which are highly dependent on the fractal structure. The ferromagnetism increases gradually with the increase of fractal order. The Curie temperature of these metal-free systems estimated from Monte Carlo simulations is considerably higher than room temperature. The stable ferromagnetism, intrinsic half-metallicity, and fractal characteristics of spin distribution in the carbon nitride frameworks open an avenue for the design of metal-free magnetic materials with exotic properties.

  7. Shepherding intrinsic localized modes in micro-mechanical arrays

    Science.gov (United States)

    Sievers, Albert

    The energy profiles of intrinsic localized modes (ILMs) in periodic physical lattices with nonlinear forces resemble those of localized vibrational modes at defects in a harmonic lattice but, like solitons, they can propagate; however, in contrast with solitons they loose energy as they move through the lattice - the more localized the excitation the faster the energy loss. One of our experimental studies with micro-mechanical arrays involves steady state locking of ILMs, and their interactions with impurities. By measuring the linear response spectra of a driven array containing an ILM both the dynamics of bifurcation transitions and the hopping of vibrational energy have been connected to the transition properties of soft modes. Recently the search for a completely mobile ILM has focused attention on minimizing the resonance interaction that occurs between the localized excitation and small amplitude plane wave modes. Via simulations we demonstrate that when more than one type of nonlinear force is present their Fourier components can often be designed to cancel against each other in the k-space region of the plane wave dispersion curve, removing the resonance. The end result is super-transmission for an ILM in a discrete physical lattice. Such an engineered, intrinsic, low loss channel may prove to be a useful property for other physical systems treated within a tight binding approximation. In collaboration with M. Sato.

  8. Tipping Point

    Medline Plus

    Full Text Available ... Point by CPSC Blogger September 22, 2009 appliance child Childproofing CPSC danger death electrical fall furniture head ... see news reports about horrible accidents involving young children and furniture, appliance and tv tip-overs. The ...

  9. Algebraic description of intrinsic modes in nuclei

    International Nuclear Information System (INIS)

    Leviatan, A.

    1989-01-01

    We present a procedure for extracting normal modes in algebraic number-conserving systems of interacting bosons relevant for collective states in even-even nuclei. The Hamiltonian is resolved into intrinsic (bandhead related) and collective (in-band related) parts. Shape parameters are introduced through non-spherical boson bases. Intrinsic modes decoupled from the spurious modes are obtained from the intinsic part of the Hamiltonian in the limit of large number of bosons. Intrinsic states are constructed and serve to evaluate electromagnetic transition rates. The method is illustrated for systems with one type of boson as well as with proton-neutron bosons. 28 refs., 1 fig

  10. Algebraic description of intrinsic modes in nuclei

    Energy Technology Data Exchange (ETDEWEB)

    Leviatan, A.

    1989-01-01

    We present a procedure for extracting normal modes in algebraic number-conserving systems of interacting bosons relevant for collective states in even-even nuclei. The Hamiltonian is resolved into intrinsic (bandhead related) and collective (in-band related) parts. Shape parameters are introduced through non-spherical boson bases. Intrinsic modes decoupled from the spurious modes are obtained from the intinsic part of the Hamiltonian in the limit of large number of bosons. Intrinsic states are constructed and serve to evaluate electromagnetic transition rates. The method is illustrated for systems with one type of boson as well as with proton-neutron bosons. 28 refs., 1 fig.

  11. On determining defects identity in carbon nanotubes using charge probes

    Energy Technology Data Exchange (ETDEWEB)

    Kostyrko, T. [Faculty of Physics, A. Mickiewicz University, ul. Umultowska 85, 61-614 Poznań (Poland); García-Suárez, V.M. [Departamento de Física, Universidad de Oviedo, 33007 Oviedo (Spain); Nanomaterials and Nanotechnology Research Center (CINN), Oviedo (Spain); Wawrzyniak-Adamczewska, M., E-mail: mwaw@amu.edu.pl [Faculty of Physics, A. Mickiewicz University, ul. Umultowska 85, 61-614 Poznań (Poland); Ferrer, J. [Departamento de Física, Universidad de Oviedo, 33007 Oviedo (Spain); Nanomaterials and Nanotechnology Research Center (CINN), Oviedo (Spain)

    2016-06-15

    Highlights: • Conductance maps in defected carbon nanotube were computed using an ab initio method. • H-passivation can transform a vacancy from a donor type to an acceptor type defect. • Means to use a point charge probe to identify defect types in carbon nanotubes were shown. • Carbon nanotubes with defects can be applied as static charge detectors in nanoscale. - Abstract: A metallic carbon nanotube with point-like defects under influence of a local potential due to a point charge probe is theoretically studied. A combination of density functional theory and the Landauer–Büttiker formalism is used to compute the electronic conductance in the zero-voltage limit. From a collection of the results obtained by varying the probe position around different defects the conductance maps are created. The analysis of the conductance maps allows us to formulate conditions under which several point-like defects (the Stone–Wales defect, a simple carbon vacancy, hydrogen-passivated vacancies) can be distinguished and identified in experiments with the help of scanning probe microscopy.

  12. Single Ventricle Defects

    Science.gov (United States)

    ... heart defects along with pulmonary atresia. (Children with tetralogy of Fallot who also have pulmonary atresia may have treatment similar to others with tetralogy of Fallot.) How does it affect the heart? An opening ...

  13. Repairing Nanoparticle Surface Defects

    NARCIS (Netherlands)

    Marino, Emanuele; Kodger, Thomas E.; Crisp, R.W.; Timmerman, Dolf; MacArthur, Katherine E.; Heggen, Marc; Schall, Peter

    2017-01-01

    Solar devices based on semiconductor nanoparticles require the use of conductive ligands; however, replacing the native, insulating ligands with conductive metal chalcogenide complexes introduces structural defects within the crystalline nanostructure that act as traps for charge carriers. We

  14. Neural tube defects

    Directory of Open Access Journals (Sweden)

    M.E. Marshall

    1981-09-01

    Full Text Available Neural tube defects refer to any defect in the morphogenesis of the neural tube, the most common types being spina bifida and anencephaly. Spina bifida has been recognised in skeletons found in north-eastern Morocco and estimated to have an age of almost 12 000 years. It was also known to the ancient Greek and Arabian physicians who thought that the bony defect was due to the tumour. The term spina bifida was first used by Professor Nicolai Tulp of Amsterdam in 1652. Many other terms have been used to describe this defect, but spina bifida remains the most useful general term, as it describes the separation of the vertebral elements in the midline.

  15. Intrinsic endometriosis of ureter: a case report

    International Nuclear Information System (INIS)

    Hong, Myung Sun; Kim, Ho Chul; Yun, Ku Sup; Choi, Chul Soon; Bae, Sang Hoon; Kim, Sung Yong; Shin, Hyung Sik

    1995-01-01

    Endometriosis is a rare cause of an ureteral obstruction. We report a case of intrinsic ureteral endometriosis resulting in severe hydroureteronephrosis. The diagnosis of ureteral endometriosis may be considered in women with flank pain and ureteric obstruction within true pelvis

  16. The Intrinsic Dynamics of Psychological Process

    NARCIS (Netherlands)

    Vallacher, Robin R.; van Geert, Paul; Nowak, Andrzej

    2015-01-01

    Psychological processes unfold on various timescales in accord with internally generated patterns. The intrinsic dynamism of psychological process is difficult to investigate using traditional methods emphasizing cause–effect relations, however, and therefore is rarely incorporated into social

  17. Deuterium NMR, induced and intrinsic cholesteric lyomesophases

    International Nuclear Information System (INIS)

    Alcantara, M.R.

    1982-01-01

    Induced and intrinsic cholesteric lyotropic mesophases were studied. Induced cholesteric lyomesophases based on potassium laurate (KL) system, with small amounts of cholesterol added, were studied by deuterium NMR and by polarizing microscopy. Order profiles obtained from deuterium NMR of KL perdenderated chains in both induced cholesteric and normal mesophases were compared. The intrinsic cholesteric lyotropic mesophases were based on the amphiphile potassium N-lauroyl serinate (KLNS) in the resolved levo form. The study of the type I intrinsic cholesteric mesophase was made by optical microscopy under polarized light and the type II intrinsic cholesteric lyomesophase was characterized by deuterium NMR. The new texture was explained by the use of the theory of disclinations developed for thermotropic liquid crystals, specially for cholesteric type. (M.J.C.) [pt

  18. Intrinsic and acquired resistance mechanisms in enterococcus

    Science.gov (United States)

    Hollenbeck, Brian L.; Rice, Louis B.

    2012-01-01

    Enterococci have the potential for resistance to virtually all clinically useful antibiotics. Their emergence as important nosocomial pathogens has coincided with increased expression of antimicrobial resistance by members of the genus. The mechanisms underlying antibiotic resistance in enterococci may be intrinsic to the species or acquired through mutation of intrinsic genes or horizontal exchange of genetic material encoding resistance determinants. This paper reviews the antibiotic resistance mechanisms in Enterococcus faecium and Enterococcus faecalis and discusses treatment options. PMID:23076243

  19. Magnetic properties of point defects in proton irradiated diamond

    International Nuclear Information System (INIS)

    Makgato, T.N.; Sideras-Haddad, E.; Ramos, M.A.; García-Hernández, M.; Climent-Font, A.; Zucchiatti, A.; Muñoz-Martin, A.; Shrivastava, S.; Erasmus, R.

    2016-01-01

    We investigate the magnetic properties of ultra-pure type-IIa diamond following irradiation with proton beams of ≈1–2 MeV energy. SQUID magnetometry indicate the formation of Curie type paramagnetism according to the Curie law. Raman and Photoluminescence spectroscopy measurements show that the primary structural features created by proton irradiation are the centers: GR1, ND1, TR12 and 3H. The Stopping and Range of Ions in Matter (SRIM) Monte Carlo simulations together with SQUID observations show a strong correlation between vacancy production, proton fluence and the paramagnetic factor. At an average surface vacancy spacing of ≈1–1.6 nm and bulk (peak) vacancy spacing of ≈0.3-0.5 nm Curie paramagnetism is induced by formation of ND1 centres with an effective magnetic moment μ eff ~(0.1–0.2)μ B . No evidence of long range magnetic ordering is observed in the temperature range 4.2-300 K. - Highlights: • Proton macro-irradiation of pure diamond creates fluence dependent paramagnetism. • The effective magnetic moment is found to be in the range μ eff ~(0.1–0.2)μ B . • No evidence of long range magnetic ordering is observed.

  20. Tellurium self-diffusion and point defects in lead telluride

    International Nuclear Information System (INIS)

    Simirskij, Yu.N.; Firsova, L.P.

    1982-01-01

    Method of radioactive indicators was used to determine factors of tellurium self-diffusion in lead telluride with different deviation of the composition from stoichiometric in the range of enrichment by tellurium. It was found that at 973 K factors of tellurium self-diffusion in lead telluride depend slightly on the vapor pressure of tellurium equilibrium with solid phase

  1. Theoretical Investigation of Point Defects of Mercury Cadmium Telluride.

    Science.gov (United States)

    1985-11-01

    STANDARDS M93 A bL )% SECURITY CLASSIFICATION Of T HIS PAGE (W~ henl Date Enteed) MSL OY -FRiE’UUiU ’zuL REPOT DCUMNTATON AGEREAD INSTRUCTIONSREPOT RE RT...TEMPERATURE, K ’t iIs Figure 15: Theoretical results of electron mobility asa function of temperature for three different Hg8 CdxTe samples in Fig. 14

  2. Rare earth point defects in GaN

    Energy Technology Data Exchange (ETDEWEB)

    Sanna, S.

    2007-12-14

    In this work we investigate rare earth doped GaN, by means of theoretical simulations. The huge unit cells necessary to model the experimental system, where dilute amount of rare earth ions are used, are handled with the charge self consistent density-functional based-tight binding (SCC-DFTB) calculational scheme. The method has been extended to include LDA+U and simplified self interaction corrected (SIC)-like potentials for the simulation of systems with localised and strongly correlated electrons. A set of tight-binding parameters has been created to model the interaction of GaN with some dopants, including a selection of lanthanide ions interesting due to their optical or magnetic properties (Pr, Eu, Gd, Er and Tm). The f-electrons were treated as valence electrons. A qualitatively correct description of the band gap is crucial for the simulation of rare earth doped GaN, because the luminescence intensity of the implanted samples depends on the size of the host band gap and because the rare earths could introduce charge transition levels near the conduction band. In this work these levels are calculated with the Slater-Janak (SJ) transition state model, which allows an approximate calculation of the charge transition levels by analysing the Kohn-Sham eigenvalues of the DFT. (orig.)

  3. Magnetic properties of point defects in proton irradiated diamond

    Energy Technology Data Exchange (ETDEWEB)

    Makgato, T.N., E-mail: Thuto.Makgato@students.wits.ac.za [School of Physics, University of the Witwatersrand, Johannesburg 2050 (South Africa); Sideras-Haddad, E. [School of Physics, University of the Witwatersrand, Johannesburg 2050 (South Africa); Center of Excellence in Strong Materials, Physics Building, University of the Witwatersrand, Johannesburg 2050 (South Africa); Ramos, M.A. [CMAM, Centro de Micro-Analisis de Materiales, Universidad Autónoma de Madrid, C/Faraday 3, Campus de Cantoblanco, E-28049 Madrid (Spain); Departamento de Fisica de la Materia Condensada, Condensed Matter Physics Center (IFIMAC) and Instituto Nicolás Cabrera, Universidad Autónoma de Madrid, 28049 Madrid (Spain); García-Hernández, M. [Instituto de Ciencia de Materiales de Madrid, CSIC, Cantoblanco, E-28049 Madrid (Spain); Climent-Font, A.; Zucchiatti, A.; Muñoz-Martin, A. [CMAM, Centro de Micro-Analisis de Materiales, Universidad Autónoma de Madrid, C/Faraday 3, Campus de Cantoblanco, E-28049 Madrid (Spain); Shrivastava, S. [School of Physics, University of the Witwatersrand, Johannesburg 2050 (South Africa); Erasmus, R. [School of Physics, University of the Witwatersrand, Johannesburg 2050 (South Africa); Center of Excellence in Strong Materials, Physics Building, University of the Witwatersrand, Johannesburg 2050 (South Africa)

    2016-09-01

    We investigate the magnetic properties of ultra-pure type-IIa diamond following irradiation with proton beams of ≈1–2 MeV energy. SQUID magnetometry indicate the formation of Curie type paramagnetism according to the Curie law. Raman and Photoluminescence spectroscopy measurements show that the primary structural features created by proton irradiation are the centers: GR1, ND1, TR12 and 3H. The Stopping and Range of Ions in Matter (SRIM) Monte Carlo simulations together with SQUID observations show a strong correlation between vacancy production, proton fluence and the paramagnetic factor. At an average surface vacancy spacing of ≈1–1.6 nm and bulk (peak) vacancy spacing of ≈0.3-0.5 nm Curie paramagnetism is induced by formation of ND1 centres with an effective magnetic moment μ{sub eff}~(0.1–0.2)μ{sub B}. No evidence of long range magnetic ordering is observed in the temperature range 4.2-300 K. - Highlights: • Proton macro-irradiation of pure diamond creates fluence dependent paramagnetism. • The effective magnetic moment is found to be in the range μ{sub eff}~(0.1–0.2)μ{sub B}. • No evidence of long range magnetic ordering is observed.

  4. The point-defect of carbon nanotubes anchoring Au nanoparticles

    DEFF Research Database (Denmark)

    Lv, Y. A.; Cui, Y. H.; Li, X. N.

    2010-01-01

    The understanding of the interaction between Au and carbon nanotubes (CNTs) is very important since Au/CNTs composites have wide applications in many fields. In this study, we investigated the dispersion of Au nanoparticles on the CNTs by transmission electron microscopy and the bonding mechanism...

  5. Novel Therapy for Bone Regeneration in Large Segmental Defects

    Science.gov (United States)

    2016-10-01

    growth factors for bio - engineering techniques is the short half-life or dissipation of growth factors after being implanted into the defect, leading to...also regulated by mechanical stimuli. These mechanical cues can be char - acterized as either intrinsic (i.e., mechanical properties of the...specific hydrogel as a BMP-2 delivery vehicle. Bio - materials. 2014;35(21):5453–61. 102. Pratt AB, Weber FE, Schmoekel HG, Muller R, Hubbell JA

  6. Defective planar cell polarity in polycystic kidney disease.

    Science.gov (United States)

    Fischer, Evelyne; Legue, Emilie; Doyen, Antonia; Nato, Faridabano; Nicolas, Jean-François; Torres, Vicente; Yaniv, Moshe; Pontoglio, Marco

    2006-01-01

    Morphogenesis involves coordinated proliferation, differentiation and spatial distribution of cells. We show that lengthening of renal tubules is associated with mitotic orientation of cells along the tubule axis, demonstrating intrinsic planar cell polarization, and we demonstrate that mitotic orientations are significantly distorted in rodent polycystic kidney models. These results suggest that oriented cell division dictates the maintenance of constant tubule diameter during tubular lengthening and that defects in this process trigger renal tubular enlargement and cyst formation.

  7. Native defects in ultra-high vacuum grown graphene islands on Cu(1 1 1).

    Science.gov (United States)

    Hollen, S M; Tjung, S J; Mattioli, K R; Gambrel, G A; Santagata, N M; Johnston-Halperin, E; Gupta, J A

    2016-01-27

    We present a scanning tunneling microscopy (STM) study of native defects in graphene islands grown by ultra-high vacuum decomposition of ethylene on Cu(1 1 1). We characterize these defects through a survey of their apparent heights, atomic-resolution imaging, and detailed tunneling spectroscopy. Bright defects that occur only in graphene regions are identified as C site point defects in the graphene lattice and are most likely single C vacancies. Dark defect types are observed in both graphene and Cu regions, and are likely point defects in the Cu surface. We also present data showing the importance of bias and tip termination to the appearance of the defects in STM images and the ability to achieve atomic resolution. Finally, we present tunneling spectroscopy measurements probing the influence of point defects on the local electronic landscape of graphene islands.

  8. The intrinsic resistome of bacterial pathogens

    Directory of Open Access Journals (Sweden)

    Jorge Andrés Olivares Pacheco

    2013-04-01

    Full Text Available Intrinsically resistant bacteria have emerged as a relevant health problem in the last years. Those bacterial species, several of them with an environmental origin, present naturally a low-level susceptibility to several drugs. It has been proposed that intrinsic resistance is mainly the consequence of the impermeability of cellular envelopes, the activity of multidrug efflux pumps or the lack of appropriate targets for a given family of drugs. However, recently published articles indicate that the characteristic phenotype of susceptibility to antibiotics of a given bacterial species depends on the concerted activity of several elements, what has been named as intrinsic resistome. These determinants comprise not just classical resistance genes. Other elements, several of them involved in basic bacterial metabolic processes, are of relevance for the intrinsic resistance of bacterial pathogens. In the present review we analyse recent publications on the intrinsic resistomes of Escherichia coli and Pseudomonas aeruginosa. We present as well information on the role that global regulators of bacterial metabolism, as Crc from P. aeruginosa, may have on modulating bacterial susceptibility to antibiotics. Finally, we discuss the possibility of searching inhibitors of the intrinsic resistome in the aim of improving the activity of drugs currently in use for clinical practice.

  9. Incentives and intrinsic motivation in healthcare.

    Science.gov (United States)

    Berdud, Mikel; Cabasés, Juan M; Nieto, Jorge

    It has been established in the literature that workers within public organisations are intrinsically motivated. This paper is an empirical study of the healthcare sector using methods of qualitative analysis research, which aims to answer the following hypotheses: 1) doctors are intrinsically motivated; 2) economic incentives and control policies may undermine doctors' intrinsic motivation; and 3) well-designed incentives may encourage doctors' intrinsic motivation. We conducted semi-structured interviews à-la-Bewley with 16 doctors from Navarre's Healthcare Service (Servicio Navarro de Salud-Osasunbidea), Spain. The questions were based on current theories of intrinsic motivation and incentives to test the hypotheses. Interviewees were allowed to respond openly without time constraints. Relevant information was selected, quantified and analysed by using the qualitative concepts of saturation and codification. The results seem to confirm the hypotheses. Evidence supporting hypotheses 1 and 2 was gathered from all interviewees, as well as indications of the validity of hypothesis 3 based on interviewees' proposals of incentives. The conclusions could act as a guide to support the optimal design of incentive policies and schemes within health organisations when healthcare professionals are intrinsically motivated. Copyright © 2016 SESPAS. Publicado por Elsevier España, S.L.U. All rights reserved.

  10. Incremental learning of skill collections based on intrinsic motivation

    Science.gov (United States)

    Metzen, Jan H.; Kirchner, Frank

    2013-01-01

    Life-long learning of reusable, versatile skills is a key prerequisite for embodied agents that act in a complex, dynamic environment and are faced with different tasks over their lifetime. We address the question of how an agent can learn useful skills efficiently during a developmental period, i.e., when no task is imposed on him and no external reward signal is provided. Learning of skills in a developmental period needs to be incremental and self-motivated. We propose a new incremental, task-independent skill discovery approach that is suited for continuous domains. Furthermore, the agent learns specific skills based on intrinsic motivation mechanisms that determine on which skills learning is focused at a given point in time. We evaluate the approach in a reinforcement learning setup in two continuous domains with complex dynamics. We show that an intrinsically motivated, skill learning agent outperforms an agent which learns task solutions from scratch. Furthermore, we compare different intrinsic motivation mechanisms and how efficiently they make use of the agent's developmental period. PMID:23898265

  11. Incremental Learning of Skill Collections based on Intrinsic Motivation

    Directory of Open Access Journals (Sweden)

    Jan Hendrik Metzen

    2013-07-01

    Full Text Available Life-long learning of reusable, versatile skills is a key prerequisite forembodied agents that act in a complex, dynamic environment and are faced withdifferent tasks over their lifetime. We address the question of how an agentcan learn useful skills efficiently during a developmental period,i.e., when no task is imposed on him and no external reward signal is provided.Learning of skills in a developmental period needs to be incremental andself-motivated. We propose a new incremental, task-independent skill discoveryapproach that is suited for continuous domains. Furthermore, the agent learnsspecific skills based on intrinsic motivation mechanisms thatdetermine on which skills learning is focused at a given point in time. Weevaluate the approach in a reinforcement learning setup in two continuousdomains with complex dynamics. We show that an intrinsically motivated, skilllearning agent outperforms an agent which learns task solutions from scratch.Furthermore, we compare different intrinsic motivation mechanisms and howefficiently they make use of the agent's developmental period.

  12. Incremental learning of skill collections based on intrinsic motivation.

    Science.gov (United States)

    Metzen, Jan H; Kirchner, Frank

    2013-01-01

    Life-long learning of reusable, versatile skills is a key prerequisite for embodied agents that act in a complex, dynamic environment and are faced with different tasks over their lifetime. We address the question of how an agent can learn useful skills efficiently during a developmental period, i.e., when no task is imposed on him and no external reward signal is provided. Learning of skills in a developmental period needs to be incremental and self-motivated. We propose a new incremental, task-independent skill discovery approach that is suited for continuous domains. Furthermore, the agent learns specific skills based on intrinsic motivation mechanisms that determine on which skills learning is focused at a given point in time. We evaluate the approach in a reinforcement learning setup in two continuous domains with complex dynamics. We show that an intrinsically motivated, skill learning agent outperforms an agent which learns task solutions from scratch. Furthermore, we compare different intrinsic motivation mechanisms and how efficiently they make use of the agent's developmental period.

  13. Deep level defects in 4H-SiC introduced by ion implantation: the role of single ion regime.

    Science.gov (United States)

    Pastuović, Željko; Siegele, Rainer; Capan, Ivana; Brodar, Tomislav; Sato, Shin-Ichiro; Ohshima, Takeshi

    2017-11-29

    We characterized intrinsic deep level defects created in ion collision cascades which were produced by patterned implantation of single accelerated 2.0 MeV He and 600 keV H ions into n-type 4H-SiC epitaxial layers using a fast-scanning reduced-rate ion microbeam. The initial deep level transient spectroscopy measurement performed on as-grown material in the temperature range 150-700 K revealed the presence of only two electron traps, Z 1/2 (0.64 eV) and EH 6/7 (1.84 eV) assigned to the two different charge state transitions of the isolated carbon vacancy, V C (=/0) and (0/+). C-V measurements of as-implanted samples revealed the increasing free carrier removal with larger ion fluence values, in particular at depth corresponding to a vicinity of the end of an ion range. The first DLTS measurement of as-implanted samples revealed formation of additional deep level defects labelled as ET1 (0.35 eV), ET2 (0.65 eV) and EH3 (1.06 eV) which were clearly distinguished from the presence of isolated carbon vacancies (Z 1/2 and EH 6/7 defects) in increased concentrations after implantations either by He or H ions. Repeated C-V measurements showed that a partial net free-carrier recovery occurred in as-implanted samples upon the low-temperature annealing following the first DLTS measurement. The second DLTS measurement revealed the almost complete removal of ET2 defect and the partial removal of EH3 defect, while the concentrations of Z 1/2 and EH 6/7 defects increased, due to the low temperature annealing up to 700 K accomplished during the first temperature scan. We concluded that the ET2 and EH3 defects: (i) act as majority carrier removal traps, (ii) exhibit a low thermal stability and (iii) can be related to the simple point-like defects introduced by light ion implantation, namely interstitials and/or complex of interstitials and vacancies in both carbon and silicon sub-lattices.

  14. Keyhole defect production in tubular bone.

    Science.gov (United States)

    Berryman, H E; Gunther, W M

    2000-03-01

    Fracture characteristics, reported primarily for the cranium, are valuable indicators of bullet direction. A bullet striking the vault tangentially produces an irregular opening, termed a "keyhole defect." with the circular portion of the defect being the initial point of impact. Identifying this feature in tubular bone (long bone) can also demonstrate bullet direction and the position of the bone at the time of the shooting. This case study involving a tangential shot (i.e., a keyhole fracture) to the humerus demonstrates some of the same fracture mechanics seen in the cranium.

  15. GaN: Defect and Device Issues

    Energy Technology Data Exchange (ETDEWEB)

    Pearton, S.J.; Ren, F.; Shul, R.J.; Zolper, J.C.

    1998-11-09

    The role of extended and point defects, and key impurities such as C, O and H, on the electrical and optical properties of GaN is reviewed. Recent progress in the development of high reliability contacts, thermal processing, dry and wet etching techniques, implantation doping and isolation and gate insulator technology is detailed. Finally, the performance of GaN-based electronic and photonic devices such as field effect transistors, UV detectors, laser diodes and light-emitting diodes is covered, along with the influence of process-induced or grown-in defects and impurities on the device physics.

  16. Intrinsic to extrinsic phonon lifetime transition in a GaAs-AlAs superlattice.

    Science.gov (United States)

    Hofmann, F; Garg, J; Maznev, A A; Jandl, A; Bulsara, M; Fitzgerald, E A; Chen, G; Nelson, K A

    2013-07-24

    We have measured the lifetimes of two zone-center longitudinal acoustic phonon modes, at 320 and 640 GHz, in a 14 nm GaAs/2 nm AlAs superlattice structure. By comparing measurements at 296 and 79 K we separate the intrinsic contribution to phonon lifetime determined by phonon-phonon scattering from the extrinsic contribution due to defects and interface roughness. At 296 K, the 320 GHz phonon lifetime has approximately equal contributions from intrinsic and extrinsic scattering, whilst at 640 GHz it is dominated by extrinsic effects. These measurements are compared with intrinsic and extrinsic scattering rates in the superlattice obtained from first-principles lattice dynamics calculations. The calculated room-temperature intrinsic lifetime of longitudinal phonons at 320 GHz is in agreement with the experimentally measured value of 0.9 ns. The model correctly predicts the transition from predominantly intrinsic to predominantly extrinsic scattering; however the predicted transition occurs at higher frequencies. Our analysis indicates that the 'interfacial atomic disorder' model is not entirely adequate and that the observed frequency dependence of the extrinsic scattering rate is likely to be determined by a finite correlation length of interface roughness.

  17. The origins and properties of intrinsic nonradiative recombination centers in wide bandgap GaN and AlGaN

    Science.gov (United States)

    Chichibu, S. F.; Uedono, A.; Kojima, K.; Ikeda, H.; Fujito, K.; Takashima, S.; Edo, M.; Ueno, K.; Ishibashi, S.

    2018-04-01

    The nonradiative lifetime (τNR) of the near-band-edge emission in various quality GaN samples is compared with the results of positron annihilation measurement, in order to identify the origin and to determine the capture-cross-section of the major intrinsic nonradiative recombination centers (NRCs). The room-temperature τNR of various n-type GaN samples increased with decreasing the concentration of divacancies composed of a Ga vacancy (VGa) and a N vacancy (VN), namely, VGaVN. The τNR value also increased with increasing the diffusion length of positrons, which is almost proportional to the inverse third root of the gross concentration of all point defects. The results indicate that major intrinsic NRC in n-type GaN is VGaVN. From the relationship between its concentration and τNR, its hole capture-cross-section is estimated to be about 7 × 10-14 cm2. Different from the case of 4H-SiC, the major NRCs in p-type and n-type GaN are different: the major NRCs in Mg-doped p-type GaN epilayers are assigned to multiple vacancies containing a VGa and two (or three) VNs, namely, VGa(VN)n (n = 2 or 3). The ion-implanted Mg-doped GaN films are found to contain larger size vacancy complexes such as (VGa)3(VN)3. In analogy with GaN, major NRCs in Al0.6Ga0.4N alloys are assigned to vacancy complexes containing an Al vacancy or a VGa.

  18. Computer programs for eddy-current defect studies

    Energy Technology Data Exchange (ETDEWEB)

    Pate, J. R.; Dodd, C. V. [Oak Ridge National Lab., TN (USA)

    1990-06-01

    Several computer programs to aid in the design of eddy-current tests and probes have been written. The programs, written in Fortran, deal in various ways with the response to defects exhibited by four types of probes: the pancake probe, the reflection probe, the circumferential boreside probe, and the circumferential encircling probe. Programs are included which calculate the impedance or voltage change in a coil due to a defect, which calculate and plot the defect sensitivity factor of a coil, and which invert calculated or experimental readings to obtain the size of a defect. The theory upon which the programs are based is the Burrows point defect theory, and thus the calculations of the programs will be more accurate for small defects. 6 refs., 21 figs.

  19. Localized defects in classical one-dimensional models

    International Nuclear Information System (INIS)

    Tang, L.H.; Griffiths, R.B.

    1988-01-01

    Several aspects of localized defects in the Frenkel-Kontorova, classical XY chain and analogous models with a finite range of interactions are discussed from a general point of view. Precise definitions are given for defect phase shifts (charges) and for creation, pinning, and interaction energies. Corresponding definitions are also provided for interfaces (localized regions separating two phases). For the nearest-neighbor Frenkel-Kontorova model, the various defect energies are related to areas enclosed by contours joining heteroclinic points of the area-preserving map generated by the conditions of mechanical equilibrium

  20. DEFECTS SIMULATION OF ROLLING STRIP

    OpenAIRE

    Rudolf Mišičko; Tibor Kvačkaj; Martin Vlado; Lucia Gulová; Miloslav Lupták; Jana Bidulská

    2009-01-01

    The defects in the continuous casting slabs can be developed or kept down in principle by rolling technology, especially depend to sort, size and distribution of primary defects, as well as used of rolling parameters. Scope of the article is on observation behavior artificial surface and undersurface defects (scores) without filler (surface defects) and filling by oxides and casting powder (subsurface defects). First phase of hot rolling process have been done by software simulation DEFORM 3D...

  1. Structure defects in cementite

    International Nuclear Information System (INIS)

    Schmitt, Bernard

    1971-01-01

    After a presentation of experimental techniques (elaboration principles, elaboration techniques, and investigation techniques for cementite thin layers and iron-carbon massive alloys), the author of this research thesis reports the study of cementite structure (interatomic distance, description and representation), reports the study of iron-carbon thin layers (structure, influence of silicon, defects), reports the study of perfect and imperfect dislocations and of plane defects in cementite. The author also reports hardness measurements, and discusses the relationships between cementite and other iron carbides

  2. Defects and related phenomena in electron irradiated ordered or disordered Fe-Co and Fe-Co-V alloys

    International Nuclear Information System (INIS)

    Riviere, J.P.; Dinhut, J.F.; Desarmot, G.

    1983-01-01

    Two B 2 type alloys Fe 50 at.%-Co 50 at.% and Fe 49 at.%-Co 49 at.%-V 2 at.% either in the ordered or the disordered state have been irradiated with 2.5 MeV electrons at liquid hydrogen temperature. The recovery of the resistivity damage was studied during subsequent isochronal annealing up to 700 K. The resistivity damage rates for both initially disordered Fe-Co and Fe-Co-V alloys are interpreted in terms of point defect production. The intrinsic resistivities rhosub(F) of Frenkel pairs and the effective recombination volumes V 0 are determined. In the Fe-Co ordered alloy point defect production superimposed with a disordering process can account for the resistivity damage. The effective displacement rate causing disordering is determined, indicating that replacement collisions are the dominant disordering mechanism. A calculation of the average number of replacements along directions per Frenkel pair is proposed. During the recovery of the radiation induced resistivity three main stages are observed in both ordered and disordered alloys. The particular resistivity behavior of the Fe-Co-V alloy complicates the interpretation of production and recovery data. (author)

  3. The electronic and transport properties of borophane with defects: A first principles study

    Science.gov (United States)

    Sun, Jie; Zhang, Yujin; Leng, Jiancai; Ma, Hong

    2018-03-01

    Recent works well confirm the stability of hydrogenated borophene, known as borophane. Here, first principles studies have performed on the electronic and transport properties of borophane with defects. The calculations indicate that the introduction of defects results in different behavior of charges redistribution along x and y directions. The intrinsic electronic structure of borophane with Dirac cone is destroyed in various degrees by each type of defect. The inducing defect states lead to the occurrence of flat bands, which are not benefit for the electronic transport properties. According to the transmission spectra and I-V characteristics, these defects decrease the transmission intensity and the current value both along two directions. However, the transport anisotropy can be efficiently tuned by defect, which may contribute to the design of functional device.

  4. Intrinsic Fabry-Perot Sensors for Magnetic Field Detection

    Science.gov (United States)

    Broadway, Christian; Descamps, Frédéric; Kinet, Damien; Caucheteur, Christophe; Mégret, Patrice

    2018-01-01

    Within the context of ensuring stable nuclear fusion, it is important to monitor and control a number of parametersincluding the magnetic field associated with plasma circulation. Optical fibre sensing techniques have seen a surge in promulgation and research advances in recent years, due to their immunity to electromagnetic radiation and compact dimensions. Prior work has shown that fibre Bragg gratings are one method of recovering the induced magnetic field, with the main point of interest being their use as distributed point sensors. However, Bragg grating inscription leads to the creation of linear birefringence that increases detector noise and could obscure a given signal. We have hypothesised that by using an intrinsic Fabry-Perot cavity comprised of two identical Bragg gratings, we could obtain a more accurate detector with the removal of photo-induced birefringence in the detection region. We present a proof of concept optical fibre sensor based on an intrinsic Fabry-Perot cavity that shows spectrally visible amplitude modulation. Finally, we demonstrate faster data processing that allows real time monitoring of a given scenario.

  5. Defects in AlSb: a density functional study

    International Nuclear Information System (INIS)

    Du, Mao-Hua

    2009-01-01

    We carry out density functional calculations to study both intrinsic and extrinsic defects in AlSb. We focus on the carrier compensation and trapping properties of these defects, which are important to the radiation detection applications. We show that the Sb antisite is a low-energy defect, baring much similarity to the As antisite in GaAs. The SbAl is effective in compensating holes induced by the residual carbon, but is also a deep electron trap that reduces the carrier drifting length. We discuss the possibility of using hydrogenated isovalent N impurity in AlSb and GaAs to pin the Fermi level without causing efficient carrier trapping.

  6. Functions of intrinsic disorder in transmembrane proteins

    DEFF Research Database (Denmark)

    Kjaergaard, Magnus; Kragelund, Birthe B.

    2017-01-01

    mechanisms. (3) Trafficking of membrane proteins. (4) Transient membrane associations. (5) Post-translational modifications most notably phosphorylation and (6) disorder-linked isoform dependent function. We finish the review by discussing the future challenges facing the membrane protein community regarding......Intrinsic disorder is common in integral membrane proteins, particularly in the intracellular domains. Despite this observation, these domains are not always recognized as being disordered. In this review, we will discuss the biological functions of intrinsically disordered regions of membrane...... proteins, and address why the flexibility afforded by disorder is mechanistically important. Intrinsically disordered regions are present in many common classes of membrane proteins including ion channels and transporters; G-protein coupled receptors (GPCRs), receptor tyrosine kinases and cytokine...

  7. Cell intrinsic control of axon regeneration

    Science.gov (United States)

    Mar, Fernando M; Bonni, Azad; Sousa, Mónica M

    2014-01-01

    Although neurons execute a cell intrinsic program of axonal growth during development, following the establishment of connections, the developmental growth capacity declines. Besides environmental challenges, this switch largely accounts for the failure of adult central nervous system (CNS) axons to regenerate. Here, we discuss the cell intrinsic control of axon regeneration, including not only the regulation of transcriptional and epigenetic mechanisms, but also the modulation of local protein translation, retrograde and anterograde axonal transport, and microtubule dynamics. We further explore the causes underlying the failure of CNS neurons to mount a vigorous regenerative response, and the paradigms demonstrating the activation of cell intrinsic axon growth programs. Finally, we present potential mechanisms to support axon regeneration, as these may represent future therapeutic approaches to promote recovery following CNS injury and disease. PMID:24531721

  8. Two-dimensional transition metal dichalcogenides: interface and defect engineering.

    Science.gov (United States)

    Hu, Zehua; Wu, Zhangting; Han, Cheng; He, Jun; Ni, Zhenhua; Chen, Wei

    2018-03-06

    Two-dimensional (2D) transition metal dichalcogenides (TMDCs) have been considered as promising candidates for next generation nanoelectronics. Because of their atomically-thin structure and high surface to volume ratio, the interfaces involved in TMDC-based devices play a predominant role in determining the device performance, such as charge injection/collection at the metal/TMDC interface, and charge carrier trapping at the dielectric/TMDC interface. On the other hand, the crystalline structures of TMDCs are enriched by a variety of intrinsic defects, including vacancies, adatoms, grain boundaries, and substitutional impurities. Customized design and engineering of the interfaces and defects provides an effective way to modulate the properties of TMDCs and finally enhance the device performance. Herein, we summarize and highlight recent advances and state-of-the-art investigations on the interface and defect engineering of TMDCs and their corresponding applications in electronic and optoelectronic devices. Various interface engineering approaches for TMDCs are overviewed, including surface charge transfer doping, TMDC/metal contact engineering, and TMDC/dielectric interface engineering. Subsequently, different types of structural defects in TMDCs are introduced. Defect engineering strategies utilized to modulate the optical and electronic properties of TMDCs, as well as the developed high-performance and functional devices are summarized. Finally, we highlight the challenges and opportunities for interface and defect engineering in TMDC materials for electronics and optoelectronics.

  9. Defects in semiconductor nanostructures

    Indian Academy of Sciences (India)

    sizes were less than 100 Si atoms due to computational limitations. An interesting parallel is that current first principles calculations alluded to in §5 are size ham- pered for similar reasons. These 'defect molecule' calculations were probably the first studies in SN. We believe that a perusal of this 'ancient' scientific literature.

  10. Fetal abdominal wall defects.

    Science.gov (United States)

    Prefumo, Federico; Izzi, Claudia

    2014-04-01

    The most common fetal abdominal wall defects are gastroschisis and omphalocele, both with a prevalence of about three in 10,000 births. Prenatal ultrasound has a high sensitivity for these abnormalities already at the time of the first-trimester nuchal scan. Major unrelated defects are associated with gastroschisis in about 10% of cases, whereas omphalocele is associated with chromosomal or genetic abnormalities in a much higher proportion of cases. Challenges in management of gastroschisis are related to the prevention of late intrauterine death, and the prediction and treatment of complex forms. With omphalocele, the main difficulty is the exclusion of associated conditions, not all diagnosed prenatally. An outline of the postnatal treatment of abdominal wall defects is given. Other rarer forms of abdominal wall defects are pentalogy of Cantrell, omphalocele, bladder exstrophy, imperforate anus, spina bifida complex, prune-belly syndrome, body stalk anomaly, and bladder and cloacal exstrophy; they deserve multidisciplinary counselling and management. Copyright © 2013 Elsevier Ltd. All rights reserved.

  11. Semiconductor Nanowires: Defects Update

    Science.gov (United States)

    Kavanagh, Karen L.

    2008-05-01

    Structural defects commonly observed in semiconducting nanowires by electron microscopy will be reviewed and their origins discussed. Their effects on electrical and optical properties will be illustrated with examples from GaSb, InAs, and ZnSe nanowires grown by MOCVD and MBE.

  12. First-principles study of intrinsic defects in CdO

    Science.gov (United States)

    Zhukov, V. P.; Medvedeva, N. I.; Krasilnikov, V. N.

    2018-03-01

    Using the density functional theory (DFT) in the GGA and LSDA + U approximations, we studied the effect of cadmium atoms in the interstitial sites and vacancies in the oxygen and cadmium sublattices on the electronic structure of rock-salt cadmium oxide (CdO). Migration of cadmium atoms into interstitial sites was shown to be unlikely. In the presence of oxygen vacancies, the behavior of CdO remains semiconducting and nonmagnetic. Cadmium vacancies induce d0 ferromagnetism and spin-dependent conductivity, which is semiconducting for spin-up electrons and is p-type metallic for spin-down electrons. The formation energies and free energies were calculated for oxygen vacancies and metallic cadmium phase, which allowed an explanation to be offered for the large number of vacancies and the metallic phase formed during reduction in hydrogen atmosphere.

  13. Defective boron nitride nanotubes: mechanical properties, electronic structures and failure behaviors

    Science.gov (United States)

    Wang, Huan; Ding, Ning; Zhao, Xian; Wu, Chi-Man Lawrence

    2018-03-01

    Due to their excellent physical and chemical characteristics, boron nitride nanotubes (BNNTs) are regarded as a complementary addition to carbon nanotubes. Pioneer studies have demonstrated that defects in carbon nanotubes are considered tools for tuning the physical properties of these materials. In the present work, investigation on the mechanical and electronic properties of pristine and defective BNNTs was performed using the density functional theory method. The analysis on the intrinsic strength, stiffness, and failure critical strain of different types of BNNTs was conducted systematically. The computing results showed that the intrinsic strength of BNNTs decreased linearly with the increased Stone–Wales (SW) defect density around the axis. The SW defect density along the axis played a minor role on the changing of mechanical properties of BNNTs. The BNNT with a B vacancy expressed higher intrinsic strength than that of the N vacancy model. The final failure of the pristine BNNTs was due to the fracture of the Type1 bonds under the mechanical strain. Defects like SW or vacancy are served as the initial break site of BNNTs. Applying strain or creating defects are both effective methods for reducing the band gap of BNNTs.

  14. Insulin aggregation tracked by its intrinsic TRES

    Science.gov (United States)

    Chung, Li Hung C.; Birch, David J. S.; Vyshemirsky, Vladislav; Ryadnov, Maxim G.; Rolinski, Olaf J.

    2017-12-01

    Time-resolved emission spectra (TRES) have been used to detect conformational changes of intrinsic tyrosines within bovine insulin at a physiological pH. The approach offers the ability to detect the initial stages of insulin aggregation at the molecular level. The data analysis has revealed the existence of at least three fluorescent species undergoing dielectric relaxation and significant spectral changes due to insulin aggregation. The results indicate the suitability of the intrinsic TRES approach for insulin studies and for monitoring its stability during storage and aggregation in insulin delivery devices.

  15. Intrinsic viscosity of a suspension of cubes

    KAUST Repository

    Mallavajula, Rajesh K.

    2013-11-06

    We report on the viscosity of a dilute suspension of cube-shaped particles. Irrespective of the particle size, size distribution, and surface chemistry, we find empirically that cubes manifest an intrinsic viscosity [η]=3.1±0.2, which is substantially higher than the well-known value for spheres, [η]=2.5. The orientation-dependent intrinsic viscosity of cubic particles is determined theoretically using a finite-element solution of the Stokes equations. For isotropically oriented cubes, these calculations show [η]=3.1, in excellent agreement with our experimental observations. © 2013 American Physical Society.

  16. Intrinsic entropy perturbations from the dark sector

    Science.gov (United States)

    Celoria, Marco; Comelli, Denis; Pilo, Luigi

    2018-03-01

    Perfect fluids are modeled by using an effective field theory approach which naturally gives a self-consistent and unambiguous description of the intrinsic non-adiabatic contribution to pressure variations. We study the impact of intrinsic entropy perturbation on the superhorizon dynamics of the curvature perturbation Script R in the dark sector. The dark sector, made of dark matter and dark energy is described as a single perfect fluid. The non-perturbative vorticity's dynamics and the Weinberg theorem violation for perfect fluids are also studied.

  17. First-Principles Investigations of Defects in Minerals

    Science.gov (United States)

    Verma, Ashok K.

    2011-07-01

    The ideal crystal has an infinite 3-dimensional repetition of identical units which may be atoms or molecules. But real crystals are limited in size and they have disorder in stacking which as called defects. Basically three types of defects exist in solids: 1) point defects, 2) line defects, and 3) surface defects. Common point defects are vacant lattice sites, interstitial atoms and impurities and these are known to influence strongly many solid-state transport properties such as diffusion, electrical conduction, creep, etc. In thermal equilibrium point defects concentrations are determined by their formation enthalpies and their movement by their migration barriers. Line and surface defects are though absent from the ideal crystal in thermal equilibrium due to higher energy costs but they are invariably present in all real crystals. Line defects include edge-, screw- and mixed-dislocations and their presence is essential in explaining the mechanical strength and deformation of real crystals. Surface defects may arise at the boundary between two grains, or small crystals, within a larger crystal. A wide variety of grain boundaries can form in a polycrystal depending on factors such growth conditions and thermal treatment. In this talk we will present our first-principles density functional theory based defect studies of SiO2 polymorphs (stishovite, CaCl2-, α-PbO2-, and pyrite-type), Mg2SiO4 polymorphs (forsterite, wadsleyite and ringwoodite) and MgO [1-3]. Briefly, several native point defects including vacancies, interstitials, and their complexes were studied in silica polymorphs upto 200 GPa. Their values increase by a factor of 2 over the entire pressure range studied with large differences in some cases between different phases. The Schottky defects are energetically most favorable at zero pressure whereas O-Frenkel pairs become systematically more favorable at pressures higher than 20 GPa. The geometric and electronic structures of defects and migrating

  18. Process of defect formation in alkaline halogenides contaminated with Eu2+ induced by non ionizing radiation

    International Nuclear Information System (INIS)

    Pedroza M, M.; Melendrez, R.; Barboza F, M.; Castaneda, B.

    2004-01-01

    The creation of defects in polluted alkaline halogenides with divalent impurities exposed to ionizing radiation is explained by means of the creation of auto trapped excitons (STE), which can be formed by means of the excitement of the halogen ion or through the trapping of electrons in centers V K taken place during the process of ionization of the halogen ion. The luminescent recombination of the exciton auto trapped produces a characteristic exciton luminescence and the recombination non radiative causes the formation of the Frenkel type defects, even of centers F - H. Experimentally has been demonstrated that the same type of glasses, exposed to radiation non ionizing of the type UV of around 230 nm, they produce defects similar Frenkel. The situation is interesting all time that photons of 230 nm (5.3 eV) they cannot create excitons directly since they are in an energy level of approximately 2.4 inferior eV to the necessary energy for the production of the same ones. In order to investigating the type of process of creation of defects with UV light energy below the energy of the band prohibited in polluted alkaline halogenides with Eu 2+ , mainly looking for experimental information that allows to explain the creation of defects taken place by the radiation non ionizing, one carries out the present work. It was found that, independently of the energy of the radiation used for the excitement, the emission comes from the transition 4f 6 5d(t 2g )-4f 7 ( 8 S 7/2 ) of the ion Eu 2+ characterized by a wide band centered in 420 nm and an additional component in 460 nm of possibly intrinsic origin. It was determined that so much the F centers and F z participate in the thermoluminescent processes and of optically stimulated luminescence, achieving to identify those peaks of Tl strictly associated to the F centers (peak in 470 K for the KCl: Eu 2+ ) and F z (peak in 370 K). Also, by means of a process of selective photo stimulation evidence was obtained that the F

  19. Implications of defect clusters formed in cascades on free defect generation and microstructural development

    International Nuclear Information System (INIS)

    Wiedersich, H.

    1992-12-01

    A large fraction of the defects produced by irradiation with energetic neutrons or heavy ions originates in cascades. Not only increased recombination of vacancy and interstitial defects but also significant clustering of like defects occur. Both processes reduce the number of point defects available for long range migration. Consequences of defect clustering in cascades will be discussed in a semi-quantitative form with the aid of calculations using a very simplified model: Quasi-steady-state distributions of immobile vacancy and/or interstitial clusters develop which, in turn, can become significant sinks for mobile defects, and, therefore reduce their lifetime. Although cluster sinks will cause segregation and, potentially, precipitation of second phases due to local changes of composition, the finite lifetime of clusters will not lead to lasting, local compositional changes. A transition from highly dense interstitial and vacancy cluster distributions to the void swelling regime occurs when the thermal evaporation of vacancies from small vacancy clusters becomes significant at higher temperatures. Unequal clustering of vacancies and interstitials leads to an imbalance of their fluxes of in the matrix and, hence, to unequal contributions to atom transport by interstitials and by vacancies even in the quasi-steady state approximation

  20. Frustration-induced protein intrinsic disorder.

    Science.gov (United States)

    Matsushita, Katsuyoshi; Kikuchi, Macoto

    2013-03-14

    Spontaneous folding into a specific native structure is the most important property of protein to perform their biological functions within organisms. Spontaneous folding is understood on the basis of an energy landscape picture based on the minimum frustration principle. Therefore, frustration seemingly only leads to protein functional disorder. However, frustration has recently been suggested to have a function in allosteric regulation. Functional frustration has the possibility to be a key to our deeper understanding of protein function. To explore another functional frustration, we theoretically examined structural frustration, which is designed to induce intrinsic disorder of a protein and its function through the coupled folding and binding. We extended the Wako-Saitô-Muñoz-Eaton model to take into account a frustration effect. With the model, we analyzed the binding part of neuron-restrictive silencer factor and showed that designed structural frustration in it induces intrinsic disorder. Furthermore, we showed that the folding and the binding are cooperative in interacting with a target protein. The cooperativity enables an intrinsically disordered protein to exhibit a sharp switch-like folding response to binding chemical potential change. Through this switch-like response, the structural frustration may contribute to the regulation function of interprotein interaction of the intrinsically disordered protein.

  1. INTRINSIC AND EXTRINSIC MOTIVATION IN THE SELECTION ...

    African Journals Online (AJOL)

    A psychological perspective is considered that applies intrinsic and extrinsic motivational concepts to communication phenomena. The paper also tries to develop an analytical understanding of human communication-related behavior with respect to the two types of motives. Proposals are also put forward to communication ...

  2. Intrinsic and Extrinsic Motivation among Collegiate Instrumentalists

    Science.gov (United States)

    Diaz, Frank M.

    2010-01-01

    The purpose of this study was to gather and compare information on measures of intrinsic and extrinsic motivation among instrumentalists enrolled in collegiate ensembles. A survey instrument was developed to gather information concerning demographic data and responses to questions on motivational preference. Participants were undergraduate and…

  3. Original Paper Detecting Nosocomial Intrinsic Infections through ...

    African Journals Online (AJOL)

    2011-04-20

    Apr 20, 2011 ... Key Words: Bacterial pathogens, Endogenous indicators, NosocomiaI infection, Surgery. Received 30 October 2010/ Accepted 30 March 2011. INTRODUCTION. Micro-organisms from intrinsic and extrinsic sources have been known to cause nosocomial infections (CDC, 1991). The human body enables.

  4. Organisational Learning and Employees' Intrinsic Motivation

    Science.gov (United States)

    Remedios, Richard; Boreham, Nick

    2004-01-01

    This study examined the effects of organisational learning initiatives on employee motivation. Four initiatives consistent with theories of organisational learning were a priori ranked in terms of concepts that underpin intrinsic-motivation theory. Eighteen employees in a UK petrochemical company were interviewed to ascertain their experiences of…

  5. Intrinsic Motivation, Organizational Justice, and Creativity

    Science.gov (United States)

    Hannam, Kalli; Narayan, Anupama

    2015-01-01

    For employees to generate creative ideas that are not only original, but also useful to their company, they must interact with their workplace environment to determine organizational needs. Therefore, it is important to consider aspects of the individual as well as their environment when studying creativity. Intrinsic motivation, a predictor of…

  6. Discovery of Intrinsic Primitives on Triangle Meshes

    KAUST Repository

    Solomon, Justin

    2011-04-01

    The discovery of meaningful parts of a shape is required for many geometry processing applications, such as parameterization, shape correspondence, and animation. It is natural to consider primitives such as spheres, cylinders and cones as the building blocks of shapes, and thus to discover parts by fitting such primitives to a given surface. This approach, however, will break down if primitive parts have undergone almost-isometric deformations, as is the case, for example, for articulated human models. We suggest that parts can be discovered instead by finding intrinsic primitives, which we define as parts that posses an approximate intrinsic symmetry. We employ the recently-developed method of computing discrete approximate Killing vector fields (AKVFs) to discover intrinsic primitives by investigating the relationship between the AKVFs of a composite object and the AKVFs of its parts. We show how to leverage this relationship with a standard clustering method to extract k intrinsic primitives and remaining asymmetric parts of a shape for a given k. We demonstrate the value of this approach for identifying the prominent symmetry generators of the parts of a given shape. Additionally, we show how our method can be modified slightly to segment an entire surface without marking asymmetric connecting regions and compare this approach to state-of-the-art methods using the Princeton Segmentation Benchmark. © 2011 The Author(s).

  7. Harnessing intrinsic localized modes to identify impurities in nonlinear periodic systems

    Science.gov (United States)

    Thota, M.; Harne, R. L.; Wang, K. W.

    2015-02-01

    Intrinsic localized modes (ILMs) are concentrations of vibrational energy in periodic systems/lattices due to the combined influences of nonlinearity and discreteness. Moreover, ILMs can move within the system and may strongly interact with an impurity, such as a stiffness change, mass variation, etc. Numerous scientific fields have uncovered examples and evidence of ILMs, motivating a multidisciplinary pursuit to rigorously understand the underlying principles. In spite of the diverse technical studies, a characterization of ILM interaction behaviors with multiple impurities in dissipative lattices remains outstanding. The insights on such behaviors may be broadly useful when dynamic measurements are the only accessible features of the periodic system. For instance, one may guide an ILM within the lattice using a deliberately applied and steered impurity and harness the observed interaction behaviors with a second, static (immovable) impurity/defect to identify how the underlying lattice is different at the second, defected site, whether or not one knew the position of the defect a priori. In this spirit, this research studies, analyzes, and characterizes the interaction types amongst an ILM and multiple impurities, and devises a method to identify a static defect impurity using quantitatively and qualitatively distinct interaction phenomena. The method is found to be robust to moderate levels of lattice stiffness heterogeneity and is applicable to monitor various property changes that represent impurities. Finally, experimental studies verify that ILMs interact with multiple impurities in unique ways such that defect features may be effectively identified.

  8. Ventricular Septal Defect (For Teens)

    Science.gov (United States)

    ... have a heart defect should avoid getting body piercings. Piercing increases the possibility that bacteria can get into ... damage heart valves. If you're considering a piercing and you have a heart defect, talk to ...

  9. Congenital Heart Defects (For Parents)

    Science.gov (United States)

    ... diagnosed until the teen years — or even adulthood. Newborn Screening Newborns in the U.S. are screened at ... Has a Heart Defect Coarctation of the Aorta Arrhythmias Mitral Valve Prolapse Atrial Septal Defect Ventricular Septal ...

  10. Theoretical study of defect properties in metals

    International Nuclear Information System (INIS)

    Sindzingre, P.

    1987-01-01

    Several characteristic properties (formation and migration enthalpies and volumes, dipole tensors, effects on shear elastic constants) of several point defects (vacancy, divacancy, interstitial, di-interstitial) in different metals: f.c.c. metals (Al, Cu, Ag, Au), h.c.p. metals (Be, Mg, Zn, Cd, Na, Co, Ti, Zr), b.c.c. metals (Li, Na, K, Rb, Cs) have been calculated. The calculated properties are evaluated from static computations performed with pair potentials derived from pseudo-potential theory (for simple or noble metals) or deduced empirically. Results are compared with available experimental data with previous theoretical works. The first part of this work where we have studied point defects properties in f.c.c. metals lead us to suggest a more convincing interpretation of X-ray scattering and elastic relation measurements concerning interstitials in Al and Cu, and a new interpretation for X-ray scattering measurements concerning di-interstitials in Al. In the second part, devoted to h.c.p. metals we are brought to propose for each studied metal the interstitial configurations which yield the best agreement with experimental results. The third part, devoted to the study of point defects in alkalin b.c.c. metals lead us to interpret self-diffusion in these metals with the assumption of a simultaneous contribution of monovacancies, divacancies and interstitials [fr

  11. Topological defects in epithelia govern cell death and extrusion

    Science.gov (United States)

    Saw, Thuan Beng; Doostmohammadi, Amin; Nier, Vincent; Kocgozlu, Leyla; Thampi, Sumesh; Toyama, Yusuke; Marcq, Philippe; Lim, Chwee Teck; Yeomans, Julia M.; Ladoux, Benoit

    2017-04-01

    Epithelial tissues (epithelia) remove excess cells through extrusion, preventing the accumulation of unnecessary or pathological cells. The extrusion process can be triggered by apoptotic signalling, oncogenic transformation and overcrowding of cells. Despite the important linkage of cell extrusion to developmental, homeostatic and pathological processes such as cancer metastasis, its underlying mechanism and connections to the intrinsic mechanics of the epithelium are largely unexplored. We approach this problem by modelling the epithelium as an active nematic liquid crystal (that has a long range directional order), and comparing numerical simulations to strain rate and stress measurements within monolayers of MDCK (Madin Darby canine kidney) cells. Here we show that apoptotic cell extrusion is provoked by singularities in cell alignments in the form of comet-shaped topological defects. We find a universal correlation between extrusion sites and positions of nematic defects in the cell orientation field in different epithelium types. The results confirm the active nematic nature of epithelia, and demonstrate that defect-induced isotropic stresses are the primary precursors of mechanotransductive responses in cells, including YAP (Yes-associated protein) transcription factor activity, caspase-3-mediated cell death, and extrusions. Importantly, the defect-driven extrusion mechanism depends on intercellular junctions, because the weakening of cell-cell interactions in an α-catenin knockdown monolayer reduces the defect size and increases both the number of defects and extrusion rates, as is also predicted by our model. We further demonstrate the ability to control extrusion hotspots by geometrically inducing defects through microcontact printing of patterned monolayers. On the basis of these results, we propose a mechanism for apoptotic cell extrusion: spontaneously formed topological defects in epithelia govern cell fate. This will be important in predicting

  12. Defects in Quantum Computers.

    Science.gov (United States)

    Gardas, Bartłomiej; Dziarmaga, Jacek; Zurek, Wojciech H; Zwolak, Michael

    2018-03-14

    The shift of interest from general purpose quantum computers to adiabatic quantum computing or quantum annealing calls for a broadly applicable and easy to implement test to assess how quantum or adiabatic is a specific hardware. Here we propose such a test based on an exactly solvable many body system-the quantum Ising chain in transverse field-and implement it on the D-Wave machine. An ideal adiabatic quench of the quantum Ising chain should lead to an ordered broken symmetry ground state with all spins aligned in the same direction. An actual quench can be imperfect due to decoherence, noise, flaws in the implemented Hamiltonian, or simply too fast to be adiabatic. Imperfections result in topological defects: Spins change orientation, kinks punctuating ordered sections of the chain. The number of such defects quantifies the extent by which the quantum computer misses the ground state, and is, therefore, imperfect.

  13. Reconstructions of eyelid defects

    Directory of Open Access Journals (Sweden)

    Nirmala Subramanian

    2011-01-01

    Full Text Available Eyelids are the protective mechanism of the eyes. The upper and lower eyelids have been formed for their specific functions by Nature. The eyelid defects are encountered in congenital anomalies, trauma, and postexcision for neoplasm. The reconstructions should be based on both functional and cosmetic aspects. The knowledge of the basic anatomy of the lids is a must. There are different techniques for reconstructing the upper eyelid, lower eyelid, and medial and lateral canthal areas. Many a times, the defects involve more than one area. For the reconstruction of the lid, the lining should be similar to the conjunctiva, a cover by skin and the middle layer to give firmness and support. It is important to understand the availability of various tissues for reconstruction. One layer should have the vascularity to support the other layer which can be a graft. A proper plan and execution of it is very important.

  14. Intrinsic Motivation, Learning Goals, Engagement, and Achievement in a Diverse High School

    Science.gov (United States)

    Froiland, John Mark; Worrell, Frank C.

    2016-01-01

    Using structural equation models, with gender, parent education, and prior grade point average (GPA) as control variables, we examined the relationships among intrinsic motivation to learn, learning goals, behavioral engagement at school, and academic performance (measured by GPA) in 1,575 students in an ethnically and racially diverse high…

  15. The Relation between Mastery Goals and Intrinsic Motivation among University Students: A Longitudinal Study

    Science.gov (United States)

    Bieg, Sonja; Reindl, Marion; Dresel, Markus

    2017-01-01

    The present work broadens previous research on students' mastery goals and intrinsic motivation by exploring their reciprocal effects using a longitudinal approach. To this end, a study using four measurement points was conducted during 10 weeks of one semester. The sample comprised 1156 students enrolled in psychology courses at a medium-sized…

  16. Growth points in nuclear physics

    CERN Document Server

    Hodgson, Peter Edward

    1980-01-01

    Growth Points in Nuclear Physics, Volume 2 covers the progress in the fields of nuclear structure and nuclear reactions. This book is composed of three chapters. The first chapter is devoted to nuclear forces and potentials, in particular the optical model potential that enables the elastic scattering of many particles by nuclei to be calculated in a very simple manner. This chapter also deals with the three-body forces and the spin dependence of the nuclear potential. The second chapter describes higher order processes involving two or more stages, specifically their intrinsic interest and th

  17. Remembering the real me: Nostalgia offers a window to the intrinsic self.

    Science.gov (United States)

    Baldwin, Matthew; Biernat, Monica; Landau, Mark J

    2015-01-01

    Seven studies reveal that nostalgia, a sentimental affection for the past, offers a window to the intrinsic self-concept-who people think they truly are. In Study 1, state nostalgia was associated with higher authenticity and lower extrinsic self-focus (concern with meeting extrinsic value standards). In Study 2, experimentally primed nostalgia increased perceived authenticity of the past self, which in turn predicted reduced current extrinsic self-focus. Study 3 showed that nostalgia increased the accessibility of the intrinsic self-concept but not the everyday self-concept. Study 4 provided evidence for a moderator suggested by our theoretical analysis: Recalling a nostalgic event increased felt nostalgia and positive affect, but this effect was attenuated if participants were prompted to recognize external factors controlling their behavior during that event. Next we treated nostalgia as an outcome variable and a moderator to test whether nostalgia is triggered by, and buffers against, threats to the intrinsic self. Using a mediation approach, Study 5 showed that participants primed to feel blocked in intrinsic self-expression responded with increased nostalgia. In Study 6, intrinsic self-threat reduced intrinsic self-expression and subjective well-being for participants who were not given an opportunity to respond with nostalgia but not for participants who were allowed to reflect on a nostalgic memory. In line with the experimental findings, correlational data from Study 7 indicated that dispositional nostalgia positively predicted intrinsic self-expression and well-being. Understanding nostalgia as a window to the intrinsic self points to new directions for research on nostalgia's antecedents, moderators, and consequences for well-being. (PsycINFO Database Record (c) 2015 APA, all rights reserved).

  18. Primary defects in lipolysis and insulin action in skeletal muscle cells from type 2 diabetic individuals

    DEFF Research Database (Denmark)

    Kase, E. T.; Feng, Y. Z.; Badin, P. M.

    2015-01-01

    A decrease in skeletal muscle lipolysis and hormone sensitive-lipase (HSL) expression has been linked to insulin resistance in obesity. The purpose of this study was to identify potential intrinsic defects in lipid turnover and lipolysis in myotubes established from obese and type 2 diabetic...

  19. Intrinsic stress of bismuth oxide thin films: effect of vapour chopping and air ageing

    International Nuclear Information System (INIS)

    Patil, R B; Puri, R K; Puri, V

    2008-01-01

    Bismuth oxide thin films of thickness 1000 A 0 have been prepared by thermal oxidation (in air) of vacuum evaporated bismuth thin films (on glass substrate) at different oxidation temperatures and duration. Both the vapour chopped and nonchopped bismuth oxide thin films showed polycrystalline and polymorphic structure. The monoclinic bismuth oxide was found to be predominant in both the cases. The effect of vapour chopping and air exposure for 40 days on the intrinsic stress of bismuth oxide thin films has been studied. The vapour chopped films showed low (3.92 - 4.80 x 10 9 N/m 2 ) intrinsic stress than those of nonchopped bismuth oxide thin films (5.77 - 6.74 x 10 9 N/m 2 ). Intrinsic stress was found to increase due to air ageing. The effect of air ageing on the vapour chopped films was found low. The vapour chopped films showed higher packing density. Higher the packing density, lower the film will age. The process of chopping vapour flow creates films with less inhomogenety i.e. a low concentration of flaws and non-planar defects which results in lower intrinsic stress

  20. Identifying the neural substrates of intrinsic motivation during task performance.

    Science.gov (United States)

    Lee, Woogul; Reeve, Johnmarshall

    2017-10-01

    Intrinsic motivation is the inherent tendency to seek out novelty and challenge, to explore and investigate, and to stretch and extend one's capacities. When people imagine performing intrinsically motivating tasks, they show heightened anterior insular cortex (AIC) activity. To fully explain the neural system of intrinsic motivation, however, requires assessing neural activity while people actually perform intrinsically motivating tasks (i.e., while answering curiosity-inducing questions or solving competence-enabling anagrams). Using event-related functional magnetic resonance imaging, we found that the neural system of intrinsic motivation involves not only AIC activity, but also striatum activity and, further, AIC-striatum functional interactions. These findings suggest that subjective feelings of intrinsic satisfaction (associated with AIC activations), reward processing (associated with striatum activations), and their interactions underlie the actual experience of intrinsic motivation. These neural findings are consistent with the conceptualization of intrinsic motivation as the pursuit and satisfaction of subjective feelings (interest and enjoyment) as intrinsic rewards.