WorldWideScience

Sample records for integrally encapsulating silicon

  1. Integrated silicon optoelectronics

    Zimmermann, Horst

    2000-01-01

    'Integrated Silicon Optoelectronics'assembles optoelectronics and microelectronics The book concentrates on silicon as the major basis of modern semiconductor devices and circuits Starting from the basics of optical emission and absorption and from the device physics of photodetectors, the aspects of the integration of photodetectors in modern bipolar, CMOS, and BiCMOS technologies are discussed Detailed descriptions of fabrication technologies and applications of optoelectronic integrated circuits are included The book, furthermore, contains a review of the state of research on eagerly expected silicon light emitters In order to cover the topic of the book comprehensively, integrated waveguides, gratings, and optoelectronic power devices are included in addition Numerous elaborate illustrations promote an easy comprehension 'Integrated Silicon Optoelectronics'will be of value to engineers, physicists, and scientists in industry and at universities The book is also recommendable for graduate students speciali...

  2. Silicon integrated circuit process

    Lee, Jong Duck

    1985-12-01

    This book introduces the process of silicon integrated circuit. It is composed of seven parts, which are oxidation process, diffusion process, ion implantation process such as ion implantation equipment, damage, annealing and influence on manufacture of integrated circuit and device, chemical vapor deposition process like silicon Epitaxy LPCVD and PECVD, photolithography process, including a sensitizer, spin, harden bake, reflection of light and problems related process, infrared light bake, wet-etch, dry etch, special etch and problems of etching, metal process like metal process like metal-silicon connection, aluminum process, credibility of aluminum and test process.

  3. Silicon integrated circuit process

    Lee, Jong Duck

    1985-12-15

    This book introduces the process of silicon integrated circuit. It is composed of seven parts, which are oxidation process, diffusion process, ion implantation process such as ion implantation equipment, damage, annealing and influence on manufacture of integrated circuit and device, chemical vapor deposition process like silicon Epitaxy LPCVD and PECVD, photolithography process, including a sensitizer, spin, harden bake, reflection of light and problems related process, infrared light bake, wet-etch, dry etch, special etch and problems of etching, metal process like metal process like metal-silicon connection, aluminum process, credibility of aluminum and test process.

  4. Silicon hybrid integration

    Li Xianyao; Yuan Taonu; Shao Shiqian; Shi Zujun; Wang Yi; Yu Yude; Yu Jinzhong

    2011-01-01

    Recently,much attention has concentrated on silicon based photonic integrated circuits (PICs), which provide a cost-effective solution for high speed, wide bandwidth optical interconnection and optical communication.To integrate III-V compounds and germanium semiconductors on silicon substrates,at present there are two kinds of manufacturing methods, i.e., heteroepitaxy and bonding. Low-temperature wafer bonding which can overcome the high growth temperature, lattice mismatch,and incompatibility of thermal expansion coefficients during heteroepitaxy, has offered the possibility for large-scale heterogeneous integration. In this paper, several commonly used bonding methods are reviewed, and the future trends of low temperature wafer bonding envisaged. (authors)

  5. Durable crystalline Si photovoltaic modules based on silicone-sheet encapsulants

    Hara, Kohjiro; Ohwada, Hiroto; Furihata, Tomoyoshi; Masuda, Atsushi

    2018-02-01

    Crystalline Si photovoltaic (PV) modules were fabricated with sheets of poly(dimethylsiloxane) (silicone) as an encapsulant. The long-term durability of the silicone-encapsulated PV modules was experimentally investigated. The silicone-based modules enhanced the long-term durability against potential-induced degradation (PID) and a damp-heat (DH) condition at 85 °C with 85% relative humidity (RH). In addition, we designed and fabricated substrate-type Si PV modules based on the silicone encapsulant and an Al-alloy plate as the substratum, which demonstrated high impact resistance and high incombustible performance. The high chemical stability, high volume resistivity, rubber-like elasticity, and incombustibility of the silicone encapsulant resulted in the high durability of the modules. Our results indicate that silicone is an attractive encapsulation material, as it improves the long-term durability of crystalline Si PV modules.

  6. Spectral perturbations from silicon diode detector encapsulation and shielding in photon fields.

    Eklund, Karin; Ahnesjö, Anders

    2010-11-01

    Silicon diodes are widely used as detectors for relative dose measurements in radiotherapy. The common manufacturing practice is to encapsulate the diodes in plastic for protection and to facilitate mounting in scanning devices. Diodes intended for use in photon fields commonly also have a shield of a high atomic number material (usually tungsten) integrated into the encapsulation to selectively absorb low-energy photons to which silicon diodes would otherwise over-response. However, new response models based on cavity theories and spectra calculations have been proposed for direct correction of the readout from unshielded (e.g., "electron") diodes used in photon fields. This raises the question whether it is correct to assume that the spectrum in a water phantom at the location of the detector cavity is not perturbed by the detector encapsulation materials. The aim of this work is to investigate the spectral effects of typical encapsulations, including shielding, used for clinical diodes. The effects of detector encapsulation of an unshielded and a shielded commercial diode on the spectra at the detector cavity location are studied through Monte Carlo simulations with PENELOPE-2005. Variance reduction based on correlated sampling is applied to reduce the CPU time needed for the simulations. The use of correlated sampling is found to be efficient and to not introduce any significant bias to the results. Compared to reference spectra calculated in water, the encapsulation for an unshielded diode is demonstrated to not perturb the spectrum, while a tungsten shielded diode caused not only the desired decrease in low-energy scattered photons but also a large increase of the primary electron fluence. Measurements with a shielded diode in a 6 MV photon beam proved that the shielding does not completely remove the field-size dependence of the detector response caused by the over-response from low-energy photons. Response factors of a properly corrected unshielded diode

  7. Comparison of silicone and spin-on glass packaging materials for light-emitting diode encapsulation

    Chang, Liann-Be; Pan, Ke-Wei; Yen, Chia-Yi [Department of Electronic Engineering and Green Technology Research Center, Chang Gung University, Taoyuan, Taiwan (China); Jeng, Ming-Jer, E-mail: mjjeng@mail.cgu.edu.tw [Department of Electronic Engineering and Green Technology Research Center, Chang Gung University, Taoyuan, Taiwan (China); Wu, Chun-Te; Hu, Sung-Cheng; Kuo, Yang-Kuao [Chemical Systems Research Division, Chung-Shan Institute of Science and Technology Armaments Bureau, MND, Taoyuan, Taiwan (China)

    2014-11-03

    Traditional white light light-emitting diode (LED) encapsulation is performed by mixed phosphors and silicone coating on LED die. However, this encapsulation with silicone coating incurs overheated temperatures and yellowing problem. Therefore, this work attempts to replace silicone paste by using spin-on-glass (SOG) materials. Experimental results indicate that although initial brightness of SOG-based packaging is lower than that of silicone packaging, its light attenuation is significantly lower than that of silicone for a long lighting time. After the LED power is turned on for 12 h, the brightness of LED with silicone and SOG material packaging decreases from 84 to 48 lm and 73 to 59 lm, respectively. Therefore, SOG material provides an alternative packaging solution for high power LED lighting applications. - Highlights: • Spin-on-glass (SOG) material was used to replace silicone coating for LED packaging. • Initial brightness of SOG packaging is lower than that of silicone packaging. • Over time, light attenuation in SOG is much lower than that in silicone. • Color rendering index and brightness of LED packaging was optimized by Taguchi method.

  8. Silica encapsulation of luminescent silicon nanoparticles: stable and biocompatible nanohybrids

    Maurice, Vincent [CEA Saclay, DSM/IRAMIS/SPAM-LFP (France); Rivolta, Ilaria [University of Milano-Bicocca, Department of Experimental Medicine (DIMS) (Italy); Vincent, Julien [CEA Saclay, DSM/IRAMIS/SPAM-LFP (France); Raccurt, Olivier [CEA Grenoble, Department of Nano Materials, NanoChemistry and NanoSafety Laboratory (DRT/LITEN/DTNM/LCSN) (France); Rouzaud, Jean-Noel [Ecole Normale superieure de Paris, Laboratoire de Geologie (France); Miserrochi, Giuseppe [University of Milano-Bicocca, Department of Experimental Medicine (DIMS) (Italy); Doris, Eric [CEA, Service de Chimie Bioorganique et de Marquage, iBiTecS (France); Reynaud, Cecile; Herlin-Boime, Nathalie, E-mail: nathalie.herlin@cea.fr [CEA Saclay, DSM/IRAMIS/SPAM-LFP (France)

    2012-02-15

    This article presents a process for surface coating and functionalization of luminescent silicon nanoparticles. The particles were coated with silica using a microemulsion process that was adapted to the fragile silicon nanoparticles. The as-produced core-shell particles have a mean diameter of 35 nm and exhibit the intrinsic photoluminescence of the silicon core. The silica layer protects the core from aqueous oxidation for several days, thus allowing the use of the nanoparticles for biological applications. The nanoparticles were further coated with amines and functionalized with polyethylene glycol chains and the toxicity of the particles has been evaluated at the different stages of the process. The core-shell nanoparticles exhibit no acute toxicity towards lung cells, which is promising for further development.

  9. Silicon-Polymer Encapsulation of High-Level Calcine Waste for Transportation or Disposal

    Loomis, G.G.; Miller, C.M.; Giansiracusa, J.A.; Kimmel, R.; Prewett, S.V.

    2000-01-01

    This report presents the results of an experimental study investigating the potential uses for silicon-polymer encapsulation of High Level Calcine Waste currently stored within the Idaho Nuclear Technology and Engineering Center (INTEC) at the Idaho National Engineering and Environmental Laboratory (INEEL). The study investigated two different applications of silicon polymer encapsulation. One application uses silicon polymer to produce a waste form suitable for disposal at a High Level Radioactive Waste Disposal Facility directly, and the other application encapsulates the calcine material for transportation to an offsite melter for further processing. A simulated waste material from INTEC, called pilot scale calcine, which contained hazardous materials but no radioactive isotopes was used for the study, which was performed at the University of Akron under special arrangement with Orbit Technologies, the originators of the silicon polymer process called Polymer Encapsulation Technology (PET). This document first discusses the PET process, followed by a presentation of past studies involving PET applications to waste problems. Next, the results of an experimental study are presented on encapsulation of the INTEC calcine waste as it applies to transportation or disposal of calcine waste. Results relating to long-term disposal include: (1) a characterization of the pilot calcine waste; (2) Toxicity Characteristic Leaching Procedure (TCLP) testing of an optimum mixture of pilot calcine, polysiloxane and special additives; and, (3) Material Characterization Center testing MCC-1P evaluation of the optimum waste form. Results relating to transportation of the calcine material for a mixture of maximum waste loading include: compressive strength testing, 10-m drop test, melt testing, and a Department of Transportation (DOT) oxidizer test

  10. Polyaniline-encapsulated silicon on three-dimensional carbon nanotubes foam with enhanced electrochemical performance for lithium-ion batteries

    Zhou, Xiaoming; Liu, Yang; Du, Chunyu; Ren, Yang; Mu, Tiansheng; Zuo, Pengjian; Yin, Geping; Ma, Yulin; Cheng, Xinqun; Gao, Yunzhi

    2018-03-01

    Seeking free volume around nanostructures for silicon-based anodes has been a crucial strategy to improve cycling and rate performance in the next generation Li-ion batteries. Herein, through a simple pyrolysis and in-situ polymerization approach, the low cost commercially available melamine foam as a soft template converts carbon nanotubes into highly dispersed and three-dimensionally interconnected framework with encapsulated silicon/polyaniline hierarchical nanoarchitecture. This unique core-sheath structure based on carbon nanotubes foam integrates a large number of mesoporous, thus providing well-accessible space for electrolyte wetting, whereas the carbon nanotubes matrix serves as conductive thoroughfares for electron transport. Meanwhile, the outer polyaniline coated on silicon nanoparticles provides effective space for volume expansion of silicon, further inhibiting the active material escape from the current collector. As expected, the PANI-Si@CNTs foam exhibits a high initial specific capacity of 1954 mAh g-1 and retains 727 mAh g-1 after 100 cycles at 100 mA g-1, which can be attributed to highly electrical conductivity of carbon nanotubes and protective layer of polyaniline sheath, together with three-dimensionally interconnected porous skeleton. This facile structure can pave a way for large scale synthesis of high durable silicon-based anodes or other electrode materials with huge volume expansion.

  11. Hybrid Integrated Platforms for Silicon Photonics

    Liang, Di; Roelkens, Gunther; Baets, Roel; Bowers, John E.

    2010-01-01

    A review of recent progress in hybrid integrated platforms for silicon photonics is presented. Integration of III-V semiconductors onto silicon-on-insulator substrates based on two different bonding techniques is compared, one comprising only inorganic materials, the other technique using an organic bonding agent. Issues such as bonding process and mechanism, bonding strength, uniformity, wafer surface requirement, and stress distribution are studied in detail. The application in silicon photonics to realize high-performance active and passive photonic devices on low-cost silicon wafers is discussed. Hybrid integration is believed to be a promising technology in a variety of applications of silicon photonics.

  12. Hybrid Integrated Platforms for Silicon Photonics

    John E. Bowers

    2010-03-01

    Full Text Available A review of recent progress in hybrid integrated platforms for silicon photonics is presented. Integration of III-V semiconductors onto silicon-on-insulator substrates based on two different bonding techniques is compared, one comprising only inorganic materials, the other technique using an organic bonding agent. Issues such as bonding process and mechanism, bonding strength, uniformity, wafer surface requirement, and stress distribution are studied in detail. The application in silicon photonics to realize high-performance active and passive photonic devices on low-cost silicon wafers is discussed. Hybrid integration is believed to be a promising technology in a variety of applications of silicon photonics.

  13. Influence of epoxy resin as encapsulation material of silicon photovoltaic cells on maximum current

    Acevedo-Gómez David

    2017-01-01

    Full Text Available This work presents an analysis about how the performance of silicon photovoltaic cells is influenced by the use of epoxy resin as encapsulation material with flat roughness. The effect of encapsulation on current at maximum power of mono-crystalline cell was tested indoor in a solar simulator bench at 1000 w/m² and AM1.5G. The results show that implementation of flat roughness layer onto cell surface reduces the maximum current inducing on average 2.7% less power with respect to a cell before any encapsulation. The losses of power and, in consequence, the less production of energy are explained by resin light absorption, reflection and partially neutralization of non-reflective coating.

  14. An accelerated stress testing program for determining the reliability sensitivity of silicon solar cells to encapsulation and metallization systems

    Lathrop, J. W.; Davis, C. W.; Royal, E.

    1982-01-01

    The use of accelerated testing methods in a program to determine the reliability attributes of terrestrial silicon solar cells is discussed. Different failure modes are to be expected when cells with and without encapsulation are subjected to accelerated testing and separate test schedules for each are described. Unencapsulated test cells having slight variations in metallization are used to illustrate how accelerated testing can highlight different diffusion related failure mechanisms. The usefulness of accelerated testing when applied to encapsulated cells is illustrated by results showing that moisture related degradation may be many times worse with some forms of encapsulation than with no encapsulation at all.

  15. Emerging heterogeneous integrated photonic platforms on silicon

    Fathpour Sasan

    2015-05-01

    Full Text Available Silicon photonics has been established as a mature and promising technology for optoelectronic integrated circuits, mostly based on the silicon-on-insulator (SOI waveguide platform. However, not all optical functionalities can be satisfactorily achieved merely based on silicon, in general, and on the SOI platform, in particular. Long-known shortcomings of silicon-based integrated photonics are optical absorption (in the telecommunication wavelengths and feasibility of electrically-injected lasers (at least at room temperature. More recently, high two-photon and free-carrier absorptions required at high optical intensities for third-order optical nonlinear effects, inherent lack of second-order optical nonlinearity, low extinction ratio of modulators based on the free-carrier plasma effect, and the loss of the buried oxide layer of the SOI waveguides at mid-infrared wavelengths have been recognized as other shortcomings. Accordingly, several novel waveguide platforms have been developing to address these shortcomings of the SOI platform. Most of these emerging platforms are based on heterogeneous integration of other material systems on silicon substrates, and in some cases silicon is integrated on other substrates. Germanium and its binary alloys with silicon, III–V compound semiconductors, silicon nitride, tantalum pentoxide and other high-index dielectric or glass materials, as well as lithium niobate are some of the materials heterogeneously integrated on silicon substrates. The materials are typically integrated by a variety of epitaxial growth, bonding, ion implantation and slicing, etch back, spin-on-glass or other techniques. These wide range of efforts are reviewed here holistically to stress that there is no pure silicon or even group IV photonics per se. Rather, the future of the field of integrated photonics appears to be one of heterogenization, where a variety of different materials and waveguide platforms will be used for

  16. Silicon nanopore membrane (SNM) for islet encapsulation and immunoisolation under convective transport

    Song, Shang; Faleo, Gaetano; Yeung, Raymond; Kant, Rishi; Posselt, Andrew M.; Desai, Tejal A.; Tang, Qizhi; Roy, Shuvo

    2016-03-01

    Problems associated with islet transplantation for Type 1 Diabetes (T1D) such as shortage of donor cells, use of immunosuppressive drugs remain as major challenges. Immune isolation using encapsulation may circumvent the use of immunosuppressants and prolong the longevity of transplanted islets. The encapsulating membrane must block the passage of host’s immune components while providing sufficient exchange of glucose, insulin and other small molecules. We report the development and characterization of a new generation of semipermeable ultrafiltration membrane, the silicon nanopore membrane (SNM), designed with approximately 7 nm-wide slit-pores to provide middle molecule selectivity by limiting passage of pro-inflammatory cytokines. Moreover, the use of convective transport with a pressure differential across the SNM overcomes the mass transfer limitations associated with diffusion through nanometer-scale pores. The SNM exhibited a hydraulic permeability of 130 ml/hr/m2/mmHg, which is more than 3 fold greater than existing polymer membranes. Analysis of sieving coefficients revealed 80% reduction in cytokines passage through SNM under convective transport. SNM protected encapsulated islets from infiltrating cytokines and retained islet viability over 6 hours and remained responsive to changes in glucose levels unlike non-encapsulated controls. Together, these data demonstrate the novel membrane exhibiting unprecedented hydraulic permeability and immune-protection for islet transplantation therapy.

  17. Silicon photonic integration in telecommunications

    Christopher Richard Doerr

    2015-08-01

    Full Text Available Silicon photonics is the guiding of light in a planar arrangement of silicon-based materials to perform various functions. We focus here on the use of silicon photonics to create transmitters and receivers for fiber-optic telecommunications. As the need to squeeze more transmission into a given bandwidth, a given footprint, and a given cost increases, silicon photonics makes more and more economic sense.

  18. Silicon wafers for integrated circuit process

    Leroy , B.

    1986-01-01

    Silicon as a substrate material will continue to dominate the market of integrated circuits for many years. We first review how crystal pulling procedures impact the quality of silicon. We then investigate how thermal treatments affect the behaviour of oxygen and carbon, and how, as a result, the quality of silicon wafers evolves. Gettering techniques are then presented. We conclude by detailing the requirements that wafers must satisfy at the incoming inspection.

  19. Silicon integrated circuits part A : supplement 2

    Kahng, Dawon

    1981-01-01

    Applied Solid State Science, Supplement 2: Silicon Integrated Circuits, Part A focuses on MOS device physics. This book is divided into three chapters-physics of the MOS transistor; nonvolatile memories; and properties of silicon-on-sapphire substrates devices, and integrated circuits. The topics covered include the short channel effects, MOSFET structures, floating gate devices, technology for nonvolatile semiconductor memories, sapphire substrates, and SOS integrated circuits and systems. The MOS capacitor, MIOS devices, and SOS process and device technology are also deliberated. This public

  20. Integrated double-sided silicon microstrip detectors

    Perevertailo V. L.

    2011-11-01

    Full Text Available The problems of design, technology and manufacturing double-sided silicon microstrip detectors using standard equipment production line in mass production of silicon integrated circuits are considered. The design of prototype high-energy particles detector for experiment ALICE (CERN is presented. The parameters of fabricated detectors are comparable with those of similar foreign detectors, but they are distinguished by lesser cost.

  1. Encapsulating of high-level radioactive waste with use of pyrocarbon and silicon carbide coatings

    Chernikov, A.

    2007-01-01

    It is known that high-level radioactive waste (HLW) constitute a real danger to biosphere, especially that their part, which contains transuranium and long-lived radionuclides resulting during reprocessing of nuclear fuel industrial and power reactors. Such waste contains approximately 99 % of long-lived fission products and transplutonium elements. At present, the concept of multi barrier protection of biosphere from radioactive waste is generally acknowledged. The main barriers are the physicochemical form of waste and enclosing strata of geological formation at places of waste-disposal. Applied methods of solidification of HLW with preparation of phosphatic and borosilicate glasses do not guarantee in full measure safety of places of waste-disposal of solidified waste in geological formations during thousand years. One promising way to improve HLW handling safety is placing of radionuclides in mineral-like matrixes similar to natural materials. The other possible way to increase safety of HLW disposal places is suggested for research by experts of Russian research institutes, for example, in the proposal for the Project of ISTC and considered in the present report, is to introduce an additional barrier on a radionuclides migration path by coating of HLW particles. Unique protective properties of pyrocarbon and silicon carbide such as low coefficients of diffusion of gaseous and solid fission products and high chemical and radiation stability [1] attract attention to these materials for coating of solidified HLW. The objective of the Project is the development of method of HLW encapsulating with use of pyrocarbon and silicon carbide coatings. To gain this end main direction of researches, including analysis of various encapsulation processes of fractionated HLW, and expected results are presented. Realization of the Project will allow to prove experimentally the efficiency of the proposed approach in the solution of the problem of HLW conditioning and ecological

  2. Porous silicon technology for integrated microsystems

    Wallner, Jin Zheng

    With the development of micro systems, there is an increasing demand for integrable porous materials. In addition to those conventional applications, such as filtration, wicking, and insulating, many new micro devices, including micro reactors, sensors, actuators, and optical components, can benefit from porous materials. Conventional porous materials, such as ceramics and polymers, however, cannot meet the challenges posed by micro systems, due to their incompatibility with standard micro-fabrication processes. In an effort to produce porous materials that can be used in micro systems, porous silicon (PS) generated by anodization of single crystalline silicon has been investigated. In this work, the PS formation process has been extensively studied and characterized as a function of substrate type, crystal orientation, doping concentration, current density and surfactant concentration and type. Anodization conditions have been optimized for producing very thick porous silicon layers with uniform pore size, and for obtaining ideal pore morphologies. Three different types of porous silicon materials: meso porous silicon, macro porous silicon with straight pores, and macro porous silicon with tortuous pores, have been successfully produced. Regular pore arrays with controllable pore size in the range of 2mum to 6mum have been demonstrated as well. Localized PS formation has been achieved by using oxide/nitride/polysilicon stack as masking materials, which can withstand anodization in hydrofluoric acid up to twenty hours. A special etching cell with electrolytic liquid backside contact along with two process flows has been developed to enable the fabrication of thick macro porous silicon membranes with though wafer pores. For device assembly, Si-Au and In-Au bonding technologies have been developed. Very low bonding temperature (˜200°C) and thick/soft bonding layers (˜6mum) have been achieved by In-Au bonding technology, which is able to compensate the potentially

  3. Silicon Photonic Integrated Circuit Mode Multiplexer

    Ding, Yunhong; Ou, Haiyan; Xu, Jing

    2013-01-01

    We propose and demonstrate a novel silicon photonic integrated circuit enabling multiplexing of orthogonal modes in a few-mode fiber (FMF). By selectively launching light to four vertical grating couplers, all six orthogonal spatial and polarization modes supported by the FMF are successfully...

  4. Materials issues in silicon integrated circuit processing

    Wittmer, M.; Stimmell, J.; Strathman, M.

    1986-01-01

    The symposium on ''Materials Issues in Integrated Circuit Processing'' sought to bring together all of the materials issued pertinent to modern integrated circuit processing. The inherent properties of the materials are becoming an important concern in integrated circuit manufacturing and accordingly research in materials science is vital for the successful implementation of modern integrated circuit technology. The session on Silicon Materials Science revealed the advanced stage of knowledge which topics such as point defects, intrinsic and extrinsic gettering and diffusion kinetics have achieved. Adaption of this knowledge to specific integrated circuit processing technologies is beginning to be addressed. The session on Epitaxy included invited papers on epitaxial insulators and IR detectors. Heteroepitaxy on silicon is receiving great attention and the results presented in this session suggest that 3-d integrated structures are an increasingly realistic possibility. Progress in low temperature silicon epitaxy and epitaxy of thin films with abrupt interfaces was also reported. Diffusion and Ion Implantation were well presented. Regrowth of implant-damaged layers and the nature of the defects which remain after regrowth were discussed in no less than seven papers. Substantial progress was also reported in the understanding of amorphising boron implants and the use of gallium implants for the formation of shallow p/sup +/ -layers

  5. Silicon Photonics II Components and Integration

    Lockwood, David J

    2011-01-01

    This book is volume II of a series of books on silicon photonics. It gives a fascinating picture of the state-of-the-art in silicon photonics from a component perspective. It presents a perspective on what can be expected in the near future. It is formed from a selected number of reviews authored by world leaders in the field, and is written from both academic and industrial viewpoints. An in-depth discussion of the route towards fully integrated silicon photonics is presented. This book will be useful not only to physicists, chemists, materials scientists, and engineers but also to graduate students who are interested in the fields of micro- and nanophotonics and optoelectronics.

  6. Loose-fit graphitic encapsulation of silicon nanowire for one-dimensional Si anode design

    Seh-Yoon Lim; Sudong Chae; Su-Ho Jung; Yuhwan Hyeon; Wonseok Jang; Won-Sub Yoon; Jae-Young Choi; Dongmok Whang

    2017-01-01

    Silicon nanowires (SiNWs) encapsulated with graphene-like carbon sheath (GS) having a void space in between (SiNW@V@GS) are demonstrated for the improved electrochemical performance of Si anode in lithium ion battery.The SiNW@V@GS structure was synthesized by a scalable fabrication method including four successive reactions:metal-catalyzed CVD growth of SiNWs,controlled thermal oxidation,and deposition of the graphitic layer,to form SiNW@SiO2@GS and additional chemical etching of sacrificial SiO2 layer between SiNWs and carbon sheath.During the synthetic process,the thickness of the void spacing was controlled by adjusting the oxidation-dependent process.The well-controlled void space and crystalline graphitic carbon sheath of the SiNW@V@GS structure enable good reversible capacity of 1444 mAhg-1 and cycling stability of 85% over 150 cycles.

  7. Silicon-Encapsulated Hollow Carbon Nanofiber Networks as Binder-Free Anodes for Lithium Ion Battery

    Ding Nan

    2014-01-01

    Full Text Available Silicon-encapsulated hollow carbon nanofiber networks with ample space around the Si nanoparticles (hollow Si/C composites were successfully synthesized by dip-coating phenolic resin onto the surface of electrospun Si/PVA nanofibers along with the subsequent solidification and carbonization. More importantly, the structure and Si content of hollow Si/C composite nanofibers can be effectively tuned by merely varying the concentration of dip solution. As-synthesized hollow Si/C composites show excellent electrochemical performance when they are used as binder-free anodes for Li-ion batteries (LIBs. In particular, when the concentration of resol/ethanol solution is 3.0%, the product exhibits a large capacity of 841 mAh g−1 in the first cycle, prominent cycling stability, and good rate capability. The discharge capacity retention of it was ~90%, with 745 mAh g−1 after 50 cycles. The results demonstrate that the hollow Si/C composites are very promising as alternative anode candidates for high-performance LIBs.

  8. Vertical integration of high-Q silicon nitride microresonators into silicon-on-insulator platform.

    Li, Qing; Eftekhar, Ali A; Sodagar, Majid; Xia, Zhixuan; Atabaki, Amir H; Adibi, Ali

    2013-07-29

    We demonstrate a vertical integration of high-Q silicon nitride microresonators into the silicon-on-insulator platform for applications at the telecommunication wavelengths. Low-loss silicon nitride films with a thickness of 400 nm are successfully grown, enabling compact silicon nitride microresonators with ultra-high intrinsic Qs (~ 6 × 10(6) for 60 μm radius and ~ 2 × 10(7) for 240 μm radius). The coupling between the silicon nitride microresonator and the underneath silicon waveguide is based on evanescent coupling with silicon dioxide as buffer. Selective coupling to a desired radial mode of the silicon nitride microresonator is also achievable using a pulley coupling scheme. In this work, a 60-μm-radius silicon nitride microresonator has been successfully integrated into the silicon-on-insulator platform, showing a single-mode operation with an intrinsic Q of 2 × 10(6).

  9. Dissolution of Monocrystalline Silicon Nanomembranes and Their Use as Encapsulation Layers and Electrical Interfaces in Water-Soluble Electronics.

    Lee, Yoon Kyeung; Yu, Ki Jun; Song, Enming; Barati Farimani, Amir; Vitale, Flavia; Xie, Zhaoqian; Yoon, Younghee; Kim, Yerim; Richardson, Andrew; Luan, Haiwen; Wu, Yixin; Xie, Xu; Lucas, Timothy H; Crawford, Kaitlyn; Mei, Yongfeng; Feng, Xue; Huang, Yonggang; Litt, Brian; Aluru, Narayana R; Yin, Lan; Rogers, John A

    2017-12-26

    The chemistry that governs the dissolution of device-grade, monocrystalline silicon nanomembranes into benign end products by hydrolysis serves as the foundation for fully eco/biodegradable classes of high-performance electronics. This paper examines these processes in aqueous solutions with chemical compositions relevant to groundwater and biofluids. The results show that the presence of Si(OH) 4 and proteins in these solutions can slow the rates of dissolution and that ion-specific effects associated with Ca 2+ can significantly increase these rates. This information allows for effective use of silicon nanomembranes not only as active layers in eco/biodegradable electronics but also as water barriers capable of providing perfect encapsulation until their disappearance by dissolution. The time scales for this encapsulation can be controlled by introduction of dopants into the Si and by addition of oxide layers on the exposed surfaces.The former possibility also allows the doped silicon to serve as an electrical interface for measuring biopotentials, as demonstrated in fully bioresorbable platforms for in vivo neural recordings. This collection of findings is important for further engineering development of water-soluble classes of silicon electronics.

  10. Photonic integration and photonics-electronics convergence on silicon platform

    Liu, Jifeng; Baba, Toshihiko; Vivien, Laurent; Xu, Dan-Xia

    2015-01-01

    Silicon photonics technology, which has the DNA of silicon electronics technology, promises to provide a compact photonic integration platform with high integration density, mass-producibility, and excellent cost performance. This technology has been used to develop and to integrate various photonic functions on silicon substrate. Moreover, photonics-electronics convergence based on silicon substrate is now being pursued. Thanks to these features, silicon photonics will have the potential to be a superior technology used in the construction of energy-efficient cost-effective apparatuses for various applications, such as communications, information processing, and sensing. Considering the material characteristics of silicon and difficulties in microfabrication technology, however, silicon by itself is not necessarily an ideal material. For example, silicon is not suitable for light emitting devices because it is an indirect transition material. The resolution and dynamic range of silicon-based interference de...

  11. InP membrane on silicon integration technology

    Smit, M.K.

    2013-01-01

    Integration of light sources in silicon photonics is usually done with an active InP-based layer stack on a silicon-based photonic circuit-layer. InP Membrane On Silicon (IMOS) technology integrates all functionality in a single InP-based layer.

  12. Novel encapsulation technique for incorporation of high permittivity fillers into silicone elastomers

    Mazurek, Piotr Stanislaw; Hvilsted, Søren; Skov, Anne Ladegaard

    2014-01-01

    permittivity fillers, 2) Grafting of high permittivity molecules onto the polymer backbone in the elastomer, and 3) Encapsulation of high permittivity fillers. The approach investigated here is a new type of encapsulation which does not interfere with the mechanical properties to the same content...

  13. Performance of hybrid photon detector prototypes with encapsulated silicon pixel detector and readout for the RICH counters of LHCb

    Campbell, M.; George, K.A.; Girone, M.; Gys, T.; Jolly, S.; Piedigrossi, D.; Riedler, P.; Rozema, P.; Snoeys, W.; Wyllie, K.

    2003-01-01

    These proceedings report on the performance of the latest prototype pixel hybrid photon detector in preparation for the LHCb Ring Imaging Cherenkov detectors. The prototype encapsulates a silicon pixel detector bump-bonded to a binary read-out chip with short (25 ns) peaking time and low ( - ) detection threshold. A brief description of the prototype is given, followed by the preliminary results of the characterisation of the prototype behaviour when tested using a low intensity pulsed light emitting diode. The results obtained are in good agreement with those obtained using previous prototypes. The proceedings conclude with a summary of the current status and future plans

  14. Elastic silicone encapsulation of n-hexadecyl bromide by microfluidic approach as novel microencapsulated phase change materials

    Fu, Zhenjin [Research Center of Laser Fusion, China Academy of Engineering Physics, Mianyang 621900 (China); School of Materials Science and Engineering, Southwest University of Science and Technology, Mianyang 621010 (China); Su, Lin; Li, Jing; Yang, Ruizhuang; Zhang, Zhanwen; Liu, Meifang; Li, Jie [Research Center of Laser Fusion, China Academy of Engineering Physics, Mianyang 621900 (China); Li, Bo, E-mail: LB6711@126.com [Research Center of Laser Fusion, China Academy of Engineering Physics, Mianyang 621900 (China)

    2014-08-20

    Highlights: • n-Hexadecyl bromide was encapsuled in elastic silicone shell. • The surfaces of microcapsules were smooth and the cross sections were compact. • Latent heat of microcapsules was 76.35 J g{sup −1}. • The microencapsulation ratio was 49 wt.%. • The microcapsules had good thermal stability. - Abstract: The elastic silicone/n-hexadecyl bromide microcapsules were prepared as novel microencapsulated phase change materials by microfluidic approach with the co-flowing channels, where the double oil1-in-oil2-in-water (O1/O2/W) droplets with a core–shell geometry were fabricated. The thermal characterizations of the microcapsules were investigated using differential scanning calorimetry (DSC) and thermogravimetry analysis (TGA). The DSC results showed that the microcapsules had good energy storage capacity with melting and freezing enthalpies 76.35 J g{sup −1} and 78.67 J g{sup −1}, respectively. The TGA investigation showed that the microcapsules had good thermal stability. The surfaces of microcapsules were smooth and the cross sections were compact from the results of optical microscope and scanning electron microscopy (SEM). Optical microscope showed that the silicone shell can provide expansion place due to its elastic property. Therefore, the silicone/n-hexadecyl bromide microcapsules showed good potential as thermal regulating textile and thermal insulation materials.

  15. Elastic silicone encapsulation of n-hexadecyl bromide by microfluidic approach as novel microencapsulated phase change materials

    Fu, Zhenjin; Su, Lin; Li, Jing; Yang, Ruizhuang; Zhang, Zhanwen; Liu, Meifang; Li, Jie; Li, Bo

    2014-01-01

    Highlights: • n-Hexadecyl bromide was encapsuled in elastic silicone shell. • The surfaces of microcapsules were smooth and the cross sections were compact. • Latent heat of microcapsules was 76.35 J g −1 . • The microencapsulation ratio was 49 wt.%. • The microcapsules had good thermal stability. - Abstract: The elastic silicone/n-hexadecyl bromide microcapsules were prepared as novel microencapsulated phase change materials by microfluidic approach with the co-flowing channels, where the double oil1-in-oil2-in-water (O1/O2/W) droplets with a core–shell geometry were fabricated. The thermal characterizations of the microcapsules were investigated using differential scanning calorimetry (DSC) and thermogravimetry analysis (TGA). The DSC results showed that the microcapsules had good energy storage capacity with melting and freezing enthalpies 76.35 J g −1 and 78.67 J g −1 , respectively. The TGA investigation showed that the microcapsules had good thermal stability. The surfaces of microcapsules were smooth and the cross sections were compact from the results of optical microscope and scanning electron microscopy (SEM). Optical microscope showed that the silicone shell can provide expansion place due to its elastic property. Therefore, the silicone/n-hexadecyl bromide microcapsules showed good potential as thermal regulating textile and thermal insulation materials

  16. Design and characterization of a 3D encapsulation with silicon vias for radio frequency micro-electromechanical system resonator

    Zhao Ji-Cong; Yuan Quan; Wang Feng-Xiang; Kan Xiao; Han Guo-Wei; Yang Jin-Ling; Yang Fu-Hua; Sun Ling; Sun Hai-Yan

    2017-01-01

    In this paper, we present a three-dimensional (3D) vacuum packaging technique at a wafer level for a radio frequency micro-electromechanical system (RF MEMS) resonator, in which low-loss silicon vias is used to transmit RF signals. Au–Sn solder bonding is adopted to provide a vacuum encapsulation as well as electrical conductions. A RF model of the encapsulation cap is established to evaluate the parasitic effect of the packaging, which provides an effective design solution of 3D RF MEMS encapsulation. With the proposed packaging structure, the signal-to-background ratio (SBR) of 24 dB is achieved, as well as the quality factor ( Q -factor) of the resonator increases from 8000 to 10400 after packaging. The packaged resonator has a linear frequency–temperature ( f – T ) characteristic in a temperature range between 0 °C and 100 °C. And the package shows favorable long-term stability of the Q -factor over 200 days, which indicates that the package has excellent hermeticity. Furthermore, the average shear strength is measured to be 43.58 MPa among 10 samples. (paper)

  17. Reconfigurable SDM Switching Using Novel Silicon Photonic Integrated Circuit

    Ding, Yunhong; Kamchevska, Valerija; Dalgaard, Kjeld

    2016-01-01

    -division multiplexing switching using silicon photonic integrated circuit, which is fabricated on a novel silicon-oninsulator platform with buried Al mirror. The silicon photonic integrated circuit is composed of a 7x7 switch and low loss grating coupler array based multicore fiber couplers. Thanks to the Al mirror......, grating couplers with ultra-low coupling loss with optical multicore fibers is achieved. The lowest total insertion loss of the silicon integrated circuit is as low as 4.5 dB, with low crosstalk lower than -30 dB. Excellent performances in terms of low insertion loss and low crosstalk are obtained...

  18. Long-wavelength III-V/silicon photonic integrated circuits

    Roelkens, G.C.; Kuyken, B.; Leo, F.; Hattasan, N.; Ryckeboer, E.M.P.; Muneeb, M.; Hu, C.L.; Malik, A.; Hens, Z.; Baets, R.G.F.; Shimura, Y.; Gencarelli, F.; Vincent, B.; Loo, van de R.; Verheyen, P.A.; Lepage, G.; Campenhout, van J.; Cerutti, L.; Rodriquez, J.B.; Tournie, E.; Chen, X; Nedeljkovic, G.; Mashanovich, G.; Liu, X.; Green, W.S.

    2013-01-01

    We review our work in the field of short-wave infrared and mid-infrared photonic integrated circuits for applications in spectroscopic sensing systems. Passive silicon waveguide circuits, GeSn photodetectors, the integration of III-V and IV-VI semiconductors on these circuits, and silicon nonlinear

  19. Amorphous silicon rich silicon nitride optical waveguides for high density integrated optics

    Philipp, Hugh T.; Andersen, Karin Nordström; Svendsen, Winnie Edith

    2004-01-01

    Amorphous silicon rich silicon nitride optical waveguides clad in silica are presented as a high-index contrast platform for high density integrated optics. Performance of different cross-sectional geometries have been measured and are presented with regards to bending loss and insertion loss...

  20. Electrochemical characteristics of porous TiO2 encapsulated silicon anode

    Jeon, Bup Ju; Lee, Joong Kee

    2011-01-01

    Graphical abstract: Cycling performances of the TiO 2 coated silicon anode at different catalyst pH values. Display Omitted Highlights: → TiO 2 coated silicon was used as the anode material for lithium batteries. → TiO 2 layer acted as a buffer layer for reducing the volume expansion. → Pore size distribution of TiO 2 coated silicon influenced discharge capacity. → Higher capacity retention was exhibited at pH 10.7. - Abstract: TiO 2 coated silicon, which was prepared by the modified sol-gel method, was employed as the anode material for lithium secondary batteries and the relationship between the diffusivity and electrochemical characteristics was investigated. The results showed that the physical properties of the samples, such as their diffusivity and pore size distribution, enhanced the cycling efficiency of the TiO 2 coated silicon, probably due to the reduction of the side reactions, which may be closely related to the pore size distribution of the TiO 2 coating layer. The pore size of the coating layer plays an important role in retarding the lithium ion diffusion. In the experimental range studied herein, higher capacity retention was exhibited for the TiO 2 coated silicon prepared at pH 10.7.

  1. Design and characterization of a 3D encapsulation with silicon vias for radio frequency micro-electromechanical system resonator

    Zhao, Ji-Cong; Yuan, Quan; Wang, Feng-Xiang; Kan, Xiao; Han, Guo-Wei; Sun, Ling; Sun, Hai-Yan; Yang, Jin-Ling; Yang, Fu-Hua

    2017-06-01

    In this paper, we present a three-dimensional (3D) vacuum packaging technique at a wafer level for a radio frequency micro-electromechanical system (RF MEMS) resonator, in which low-loss silicon vias is used to transmit RF signals. Au-Sn solder bonding is adopted to provide a vacuum encapsulation as well as electrical conductions. A RF model of the encapsulation cap is established to evaluate the parasitic effect of the packaging, which provides an effective design solution of 3D RF MEMS encapsulation. With the proposed packaging structure, the signal-to-background ratio (SBR) of 24 dB is achieved, as well as the quality factor (Q-factor) of the resonator increases from 8000 to 10400 after packaging. The packaged resonator has a linear frequency-temperature (f-T) characteristic in a temperature range between 0 °C and 100 °C. And the package shows favorable long-term stability of the Q-factor over 200 days, which indicates that the package has excellent hermeticity. Furthermore, the average shear strength is measured to be 43.58 MPa among 10 samples. Project supported by the National Natural Science Foundation of China (Grant Nos. 61234007, 61404136, and 61504130), the Fund from the Ministry of Science and Technology of China (Grant No. 2013YQ16055103), the Key Research & Development Program of Jiangsu Province, China (Grant No. BE2016007-2), and the Major Project of Natural Science Research of the Higher Education Institutions of Jiangsu Province, China (Grant No. 16KJA510006).

  2. Mid-infrared integrated photonics on silicon: a perspective

    Lin Hongtao

    2017-12-01

    Full Text Available The emergence of silicon photonics over the past two decades has established silicon as a preferred substrate platform for photonic integration. While most silicon-based photonic components have so far been realized in the near-infrared (near-IR telecommunication bands, the mid-infrared (mid-IR, 2–20-μm wavelength band presents a significant growth opportunity for integrated photonics. In this review, we offer our perspective on the burgeoning field of mid-IR integrated photonics on silicon. A comprehensive survey on the state-of-the-art of key photonic devices such as waveguides, light sources, modulators, and detectors is presented. Furthermore, on-chip spectroscopic chemical sensing is quantitatively analyzed as an example of mid-IR photonic system integration based on these basic building blocks, and the constituent component choices are discussed and contrasted in the context of system performance and integration technologies.

  3. A 40-GBd QPSK/16-QAM integrated silicon coherent receiver

    Verbist, J.; Zhang, J.; Moeneclaey, B.; Soenen, W.; Van Weerdenburg, J.J.A.; Van Uden, R.; Okonkwo, C.M.; Bauwelinck, J.; Roelkens, G.; Yin, X.

    2016-01-01

    Through co-design of a dual SiGe transimpedance amplifier and an integrated silicon photonic circuit, we realized for the first time an ultra-compact and low-power silicon single-polarization coherent receiver operating at 40 GBd. A bit-error rate of <3.8× 10-3 was obtained for an optical

  4. Methods for characterization of wafer-level encapsulation applied on silicon to LTCC anodic bonding

    Khan, M F; Ghavanini, F A; Enoksson, P; Haasl, S; Löfgren, L; Persson, K; Rusu, C; Schjølberg-Henriksen, K

    2010-01-01

    This paper presents initial results on generic characterization methods for wafer-level encapsulation. The methods, developed specifically to evaluate anodic bonding of low-temperature cofired ceramics (LTCC) to Si, are generally applicable to wafer-level encapsulation. Different microelectromechanical system (MEMS) structures positioned over the whole wafer provide local information about the bond quality. The structures include (i) resonating cantilevers as pressure sensors for bond hermeticity, (ii) resonating bridges as stress sensors for measuring the stress induced by the bonding and (iii) frames/mesas for pull tests. These MEMS structures have been designed, fabricated and characterized indicating that local information can easily be obtained. Buried electrodes to enable localized bonding have been implemented and their effectiveness is indicated from first results of the novel Si to LTCC anodic bonding.

  5. Flexible integration of free-standing nanowires into silicon photonics.

    Chen, Bigeng; Wu, Hao; Xin, Chenguang; Dai, Daoxin; Tong, Limin

    2017-06-14

    Silicon photonics has been developed successfully with a top-down fabrication technique to enable large-scale photonic integrated circuits with high reproducibility, but is limited intrinsically by the material capability for active or nonlinear applications. On the other hand, free-standing nanowires synthesized via a bottom-up growth present great material diversity and structural uniformity, but precisely assembling free-standing nanowires for on-demand photonic functionality remains a great challenge. Here we report hybrid integration of free-standing nanowires into silicon photonics with high flexibility by coupling free-standing nanowires onto target silicon waveguides that are simultaneously used for precise positioning. Coupling efficiency between a free-standing nanowire and a silicon waveguide is up to ~97% in the telecommunication band. A hybrid nonlinear-free-standing nanowires-silicon waveguides Mach-Zehnder interferometer and a racetrack resonator for significantly enhanced optical modulation are experimentally demonstrated, as well as hybrid active-free-standing nanowires-silicon waveguides circuits for light generation. These results suggest an alternative approach to flexible multifunctional on-chip nanophotonic devices.Precisely assembling free-standing nanowires for on-demand photonic functionality remains a challenge. Here, Chen et al. integrate free-standing nanowires into silicon waveguides and show all-optical modulation and light generation on silicon photonic chips.

  6. Accelerated/abbreviated test methods of the low-cost silicon solar array project. Study 4, task 3: Encapsulation

    Kolyer, J. M.; Mann, N. R.

    1977-01-01

    Methods of accelerated and abbreviated testing were developed and applied to solar cell encapsulants. These encapsulants must provide protection for as long as 20 years outdoors at different locations within the United States. Consequently, encapsulants were exposed for increasing periods of time to the inherent climatic variables of temperature, humidity, and solar flux. Property changes in the encapsulants were observed. The goal was to predict long term behavior of encapsulants based upon experimental data obtained over relatively short test periods.

  7. Structural-functional integrated concrete with macro-encapsulated inorganic PCM

    Mohseni, Ehsan; Tang, Waiching; Wang, Zhiyu

    2017-09-01

    Over the last few years the application of thermal energy storage system incorporating phase change materials (PCMs) to foster productivity and efficiency of buildings energy has grown rapidly. In this study, a structural-functional integrated concrete was developed using macro-encapsulated PCM-lightweight aggregate (LWA) as partial replacement (25 and 50% by volume) of coarse aggregate in control concrete. The PCM-LWA was prepared by incorporation of an inorganic PCM into porous LWAs through vacuum impregnation. The mechanical and thermal performance of PCM-LWA concrete were studied. The test results revealed that though the compressive strength of concrete with PCM-LWA was lower than the control concrete, but ranged from 22.02 MPa to 42.88 MPa which above the minimum strength requirement for structural application. The thermal performance test indicated that macro-encapsulated PCM-LWA has underwent the phase change transition reducing the indoor temperature.

  8. Efficient and Stable CsPbBr3 Quantum-Dot Powders Passivated and Encapsulated with a Mixed Silicon Nitride and Silicon Oxide Inorganic Polymer Matrix.

    Yoon, Hee Chang; Lee, Soyoung; Song, Jae Kyu; Yang, Heesun; Do, Young Rag

    2018-04-11

    Despite the excellent optical features of fully inorganic cesium lead halide (CsPbX 3 ) perovskite quantum dots (PeQDs), their unstable nature has limited their use in various optoelectronic devices. To mitigate the instability issues of PeQDs, we demonstrate the roles of dual-silicon nitride and silicon oxide ligands of the polysilazane (PSZ) inorganic polymer to passivate the surface defects and form a barrier layer coated onto green CsPbBr 3 QDs to maintain the high photoluminescence quantum yield (PLQY) and improve the environmental stability. The mixed SiN x /SiN x O y /SiO y passivated and encapsulated CsPbBr 3 /PSZ core/shell composite can be prepared by a simple hydrolysis reaction involving the addition of adding PSZ as a precursor and a slight amount of water into a colloidal CsPbBr 3 QD solution. The degree of the moisture-induced hydrolysis reaction of PSZ can affect the compositional ratio of SiN x , SiN x O y , and SiO y liganded to the surfaces of the CsPbBr 3 QDs to optimize the PLQY and the stability of CsPbBr 3 /PSZ core/shell composite, which shows a high PLQY (∼81.7%) with improved thermal, photo, air, and humidity stability as well under coarse conditions where the performance of CsPbBr 3 QDs typically deteriorate. To evaluate the suitability of the application of the CsPbBr 3 /PSZ powder to down-converted white-light-emitting diodes (DC-WLEDs) as the backlight of a liquid crystal display (LCD), we fabricated an on-package type of tricolor-WLED by mixing the as-synthesized green CsPbBr 3 /PSZ composite powder with red K 2 SiF 6 :Mn 4+ phosphor powder and a poly(methyl methacrylate)-encapsulating binder and coating this mixed paste onto a cup-type blue LED. The fabricated WLED show high luminous efficacy of 138.6 lm/W (EQE = 51.4%) and a wide color gamut of 128% and 111% without and with color filters, respectively, at a correlated color temperature of 6762 K.

  9. Silicon Carbide Power Devices and Integrated Circuits

    Lauenstein, Jean-Marie; Casey, Megan; Samsel, Isaak; LaBel, Ken; Chen, Yuan; Ikpe, Stanley; Wilcox, Ted; Phan, Anthony; Kim, Hak; Topper, Alyson

    2017-01-01

    An overview of the NASA NEPP Program Silicon Carbide Power Device subtask is given, including the current task roadmap, partnerships, and future plans. Included are the Agency-wide efforts to promote development of single-event effect hardened SiC power devices for space applications.

  10. Fabrication of a multifunctional nano-in-micro drug delivery platform by microfluidic templated encapsulation of porous silicon in polymer matrix.

    Zhang, Hongbo; Liu, Dongfei; Shahbazi, Mohammad-Ali; Mäkilä, Ermei; Herranz-Blanco, Bárbara; Salonen, Jarno; Hirvonen, Jouni; Santos, Hélder A

    2014-07-09

    A multifunctional nano-in-micro drug delivery platform is developed by conjugating the porous silicon nanoparticles with mucoadhesive polymers and subsequent encapsulation into a pH-responsive polymer using microfluidics. The multistage platform shows monodisperse size distribution and pH-responsive payload release, and the released nanoparticles are mucoadhesive. Moreover, this platform is capable of simultaneously loading and releasing multidrugs with distinct properties. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  11. Silicon integrated circuits advances in materials and device research

    Kahng, Dawon

    1981-01-01

    Silicon Integrated Circuits, Part B covers the special considerations needed to achieve high-power Si-integrated circuits. The book presents articles about the most important operations needed for the high-power circuitry, namely impurity diffusion and oxidation; crystal defects under thermal equilibrium in silicon and the development of high-power device physics; and associated technology. The text also describes the ever-evolving processing technology and the most promising approaches, along with the understanding of processing-related areas of physics and chemistry. Physicists, chemists, an

  12. Novel technique for reliability testing of silicon integrated circuits

    Le Minh, P.; Wallinga, Hans; Woerlee, P.H.; van den Berg, Albert; Holleman, J.

    2001-01-01

    We propose a simple, inexpensive technique with high resolution to identify the weak spots in integrated circuits by means of a non-destructive photochemical process in which photoresist is used as the photon detection tool. The experiment was done to localize the breakdown link of thin silicon

  13. Integration of mask and silicon metrology in DFM

    Matsuoka, Ryoichi; Mito, Hiroaki; Sugiyama, Akiyuki; Toyoda, Yasutaka

    2009-03-01

    We have developed a highly integrated method of mask and silicon metrology. The method adopts a metrology management system based on DBM (Design Based Metrology). This is the high accurate contouring created by an edge detection algorithm used in mask CD-SEM and silicon CD-SEM. We have inspected the high accuracy, stability and reproducibility in the experiments of integration. The accuracy is comparable with that of the mask and silicon CD-SEM metrology. In this report, we introduce the experimental results and the application. As shrinkage of design rule for semiconductor device advances, OPC (Optical Proximity Correction) goes aggressively dense in RET (Resolution Enhancement Technology). However, from the view point of DFM (Design for Manufacturability), the cost of data process for advanced MDP (Mask Data Preparation) and mask producing is a problem. Such trade-off between RET and mask producing is a big issue in semiconductor market especially in mask business. Seeing silicon device production process, information sharing is not completely organized between design section and production section. Design data created with OPC and MDP should be linked to process control on production. But design data and process control data are optimized independently. Thus, we provided a solution of DFM: advanced integration of mask metrology and silicon metrology. The system we propose here is composed of followings. 1) Design based recipe creation: Specify patterns on the design data for metrology. This step is fully automated since they are interfaced with hot spot coordinate information detected by various verification methods. 2) Design based image acquisition: Acquire the images of mask and silicon automatically by a recipe based on the pattern design of CD-SEM.It is a robust automated step because a wide range of design data is used for the image acquisition. 3) Contour profiling and GDS data generation: An image profiling process is applied to the acquired image based

  14. Infrared transparent graphene heater for silicon photonic integrated circuits.

    Schall, Daniel; Mohsin, Muhammad; Sagade, Abhay A; Otto, Martin; Chmielak, Bartos; Suckow, Stephan; Giesecke, Anna Lena; Neumaier, Daniel; Kurz, Heinrich

    2016-04-18

    Thermo-optical tuning of the refractive index is one of the pivotal operations performed in integrated silicon photonic circuits for thermal stabilization, compensation of fabrication tolerances, and implementation of photonic operations. Currently, heaters based on metal wires provide the temperature control in the silicon waveguide. The strong interaction of metal and light, however, necessitates a certain gap between the heater and the photonic structure to avoid significant transmission loss. Here we present a graphene heater that overcomes this constraint and enables an energy efficient tuning of the refractive index. We achieve a tuning power as low as 22 mW per free spectral range and fast response time of 3 µs, outperforming metal based waveguide heaters. Simulations support the experimental results and suggest that for graphene heaters the spacing to the silicon can be further reduced yielding the best possible energy efficiency and operation speed.

  15. Robust Wafer-Level Thin-Film Encapsulation (Packaging) of Microstructures (MEMS) using Low Stress PECVD Silicon Carbide

    Rajaraman, V.; Pakula, L.S.; Pham, H.T.M.; Sarro, P.M.; French, P.J.

    2009-01-01

    This paper presents a new low-cost, CMOS-compatible and robust wafer-level encapsulation technique developed using a stress-optimised PECVD SiC as the capping and sealing material, imparting harsh environment capability. This technique has been applied for the fabrication and encapsulation of a wide

  16. System-level integration of active silicon photonic biosensors

    Laplatine, L.; Al'Mrayat, O.; Luan, E.; Fang, C.; Rezaiezadeh, S.; Ratner, D. M.; Cheung, K.; Dattner, Y.; Chrostowski, L.

    2017-02-01

    Biosensors based on silicon photonic integrated circuits have attracted a growing interest in recent years. The use of sub-micron silicon waveguides to propagate near-infrared light allows for the drastic reduction of the optical system size, while increasing its complexity and sensitivity. Using silicon as the propagating medium also leverages the fabrication capabilities of CMOS foundries, which offer low-cost mass production. Researchers have deeply investigated photonic sensor devices, such as ring resonators, interferometers and photonic crystals, but the practical integration of silicon photonic biochips as part of a complete system has received less attention. Herein, we present a practical system-level architecture which can be employed to integrate the aforementioned photonic biosensors. We describe a system based on 1 mm2 dies that integrate germanium photodetectors and a single light coupling device. The die are embedded into a 16x16 mm2 epoxy package to enable microfluidic and electrical integration. First, we demonstrate a simple process to mimic Fan-Out Wafer-level-Packaging, which enables low-cost mass production. We then characterize the photodetectors in the photovoltaic mode, which exhibit high sensitivity at low optical power. Finally, we present a new grating coupler concept to relax the lateral alignment tolerance down to +/- 50 μm at 1-dB (80%) power penalty, which should permit non-experts to use the biochips in a"plug-and-play" style. The system-level integration demonstrated in this study paves the way towards the mass production of low-cost and highly sensitive biosensors, and can facilitate their wide adoption for biomedical and agro-environmental applications.

  17. Heterogeneous integration of lithium niobate and silicon nitride waveguides for wafer-scale photonic integrated circuits on silicon.

    Chang, Lin; Pfeiffer, Martin H P; Volet, Nicolas; Zervas, Michael; Peters, Jon D; Manganelli, Costanza L; Stanton, Eric J; Li, Yifei; Kippenberg, Tobias J; Bowers, John E

    2017-02-15

    An ideal photonic integrated circuit for nonlinear photonic applications requires high optical nonlinearities and low loss. This work demonstrates a heterogeneous platform by bonding lithium niobate (LN) thin films onto a silicon nitride (Si3N4) waveguide layer on silicon. It not only provides large second- and third-order nonlinear coefficients, but also shows low propagation loss in both the Si3N4 and the LN-Si3N4 waveguides. The tapers enable low-loss-mode transitions between these two waveguides. This platform is essential for various on-chip applications, e.g., modulators, frequency conversions, and quantum communications.

  18. Integration of lateral porous silicon membranes into planar microfluidics.

    Leïchlé, Thierry; Bourrier, David

    2015-02-07

    In this work, we present a novel fabrication process that enables the monolithic integration of lateral porous silicon membranes into single-layer planar microchannels. This fabrication technique relies on the patterning of local electrodes to guide pore formation horizontally within the membrane and on the use of silicon-on-insulator substrates to spatially localize porous silicon within the channel depth. The feasibility of our approach is studied by current flow analysis using the finite element method and supported by creating 10 μm long mesoporous membranes within 20 μm deep microchannels. The fabricated membranes are demonstrated to be potentially useful for dead-end microfiltration by adequately retaining 300 nm diameter beads while macromolecules such as single-stranded DNA and immunoglobulin G permeate the membrane. The experimentally determined fluidic resistance is in accordance with the theoretical value expected from the estimated pore size and porosity. The work presented here is expected to greatly simplify the integration of membranes capable of size exclusion based separation into fluidic devices and opens doors to the use of porous silicon in planar lab on a chip devices.

  19. Hybrid integration of carbon nanotubes in silicon photonic structures

    Durán-Valdeiglesias, E.; Zhang, W.; Alonso-Ramos, C.; Le Roux, X.; Serna, S.; Hoang, H. C.; Marris-Morini, D.; Cassan, E.; Intonti, F.; Sarti, F.; Caselli, N.; La China, F.; Gurioli, M.; Balestrieri, M.; Vivien, L.; Filoramo, A.

    2017-02-01

    Silicon photonics, due to its compatibility with the CMOS platform and unprecedented integration capability, has become the preferred solution for the implementation of next generation optical interconnects to accomplish high efficiency, low energy consumption, low cost and device miniaturization in one single chip. However, it is restricted by silicon itself. Silicon does not have efficient light emission or detection in the telecommunication wavelength range (1.3 μm-1.5 μm) or any electro-optic effect (i.e. Pockels effect). Hence, silicon photonic needs to be complemented with other materials for the realization of optically-active devices, including III-V for lasing and Ge for detection. The very different requirement of these materials results in complex fabrication processes that offset the cost-effectiveness of the Si photonics approach. For this purpose, carbon nanotubes (CNTs) have recently been proposed as an attractive one-dimensional light emitting material. Interestingly, semiconducting single walled CNTs (SWNTs) exhibit room-temperature photo- and electro-luminescence in the near-IR that could be exploited for the implementation of integrated nano-sources. They can also be considered for the realization of photo-detectors and optical modulators, since they rely on intrinsically fast non-linear effects, such as Stark and Kerr effect. All these properties make SWNTs ideal candidates in order to fabricate a large variety of optoelectronic devices, including near-IR sources, modulators and photodetectors on Si photonic platforms. In addition, solution processed SWNTs can be integrated on Si using spin-coating or drop-casting techniques, obviating the need of complex epitaxial growth or chip bonding approaches. Here, we report on our recent progress in the coupling of SWNTs light emission into optical resonators implemented on the silicon-on-insulator (SOI) platform. .

  20. Integration of functional complex oxide nanomaterials on silicon

    Jose Manuel eVila-Fungueiriño

    2015-06-01

    Full Text Available The combination of standard wafer-scale semiconductor processing with the properties of functional oxides opens up to innovative and more efficient devices with high value applications that can be produced at large scale. This review uncovers the main strategies that are successfully used to monolithically integrate functional complex oxide thin films and nanostructures on silicon: the chemical solution deposition approach (CSD and the advanced physical vapor deposition techniques such as oxide molecular beam epitaxy (MBE. Special emphasis will be placed on complex oxide nanostructures epitaxially grown on silicon using the combination of CSD and MBE. Several examples will be exposed, with a particular stress on the control of interfaces and crystallization mechanisms on epitaxial perovskite oxide thin films, nanostructured quartz thin films, and octahedral molecular sieve nanowires. This review enlightens on the potential of complex oxide nanostructures and the combination of both chemical and physical elaboration techniques for novel oxide-based integrated devices.

  1. Recovery patterns, histological observations and genetic integrity in Malus shoot tips cryopreserved using droplet vitrification and encapsulation-dehydration procedures

    A droplet-vitrification procedure is described for cryopreservation of Malus shoot tips. Survival patterns, recovery types, histological observations, and genetic integrity were compared for Malus shoot tips cryopreserved using this droplet-vitrification procedure and an encapsulation-dehydration pr...

  2. Silicon-based optical integrated circuits for terabit communication networks

    Svidzinsky, K K

    2003-01-01

    A brief review is presented of the development of silicon-based optical integrated circuits used as components in modern all-optical communication networks with the terabit-per-second transmission capacity. The designs and technologies for manufacturing these circuits are described and the problems related to their development and application in WDM communication systems are considered. (special issue devoted to the memory of academician a m prokhorov)

  3. Integrated Silicon Carbide Power Electronic Block

    Radhakrishnan, Rahul [Global Power Technologies Group, Inc., Lake Forest, CA (United States)

    2017-11-07

    Research involved in this project is aimed at monolithically integrating an anti-parallel diode to the SiC MOSFET switch, so as to avoid having to use an external anti-parallel diode in power circuit applications. SiC MOSFETs are replacing Si MOSFETs and IGBTs in many applications, yet the high bandgap of the body diode in SiC MOSFET and consequent need for an external anti-parallel diode increases costs and discourages circuit designers from adopting this technology. Successful demonstration and subsequent commercialization of this technology would reduce SiC MOSFET cost and additionally reduce component count as well as other costs at the power circuit level. In this Phase I project, we have created multiple device designs, set up a process for device fabrication at the 150mm SiC foundry XFAB Texas, demonstrated unit-processes for device fabrication in short loops and started full flow device fabrication. Key findings of the development activity were: The limits of coverage of photoresist over the topology of thick polysilicon structures covered with oxide, which required larger feature dimensions to overcome; and The insufficient process margin for removing oxide spacers from polysilicon field ring features which could result in loss of some features without further process development No fundamental obstacles were uncovered during the process development. Given sufficient time for additional development it is likely that processes could be tuned to realize the monolithically integrated SiC JBS diode and MOSFET. Sufficient funds were not available in this program to resolve processing difficulties and fabricate the devices.

  4. Feasibility studies of microelectrode silicon detectors with integrated electronics

    Dalla Betta, G.-F.; Batignani, G.; Bettarini, S.; Boscardin, M.; Bosisio, L.; Carpinelli, M.; Dittongo, S.; Forti, F.; Giorgi, M.; Gregori, P.; Lusiani, A.; Manghisoni, M.; Pignatel, G.U.; Rama, M.; Ratti, L.; Re, V.; Sandrelli, F.; Speziali, V.; Svelto, F.; Zorzi, N.

    2002-01-01

    We describe our experience on design and fabrication, on high-resistivity silicon substrates, of microstrip detectors and integrated electronics, devoted to high-energy physics experiments and medical/industrial imaging applications. We report on the full program of our collaboration, with particular regards to the tuning of a new fabrication process, allowing for the production of good quality transistors, while keeping under control the basic detector parameters, such as leakage current. Experimental results on JFET and bipolar transistors are presented, and a microstrip detector with an integrated JFET in source-follower configuration is introduced

  5. Silicon carbide MOSFET integrated circuit technology

    Brown, D.M.; Downey, E.; Ghezzo, M.; Kretchmer, J.; Krishnamurthy, V.; Hennessy, W.; Michon, G. [General Electric Co., Schenectady, NY (United States). Corporate Research and Development Center

    1997-07-16

    The research and development activities carried out to demonstrate the status of MOS planar technology for the manufacture of high temperature SiC ICs will be described. These activities resulted in the design, fabrication and demonstration of the World`s first SiC analog IC - a monolithic MOSFET operational amplifier. Research tasks required for the development of a planar SiC MOSFET IC technology included characterization of the SiC/SiO{sub 2} interface using thermally grown oxides: high temperature (350 C) reliability studies of thermally grown oxides: ion implantation studies of donor (N) and acceptor (B) dopants to form junction diodes: epitaxial layer characterization: N channel inversion and depletion mode MOSFETs; device isolation methods and finally integrated circuit design, fabrication and testing of the World`s first monolithic SiC operational amplifier IC. These studies defined a SiC n-channel depletion mode MOSFET IC technology and outlined tasks required to improve all types of SiC devices. For instance, high temperature circuit drift instabilities at 350 C were discovered and characterized. This type of instability needs to be understood and resolved because it affects the high temperature reliability of other types of SiC devices. Improvements in SiC wafer surface quality and the use of deposited oxides instead of thermally grown SiO{sub 2} gate dielectrics will probably be required for enhanced reliability. The slow reverse recovery time exhibited by n{sup +}-p diodes formed by N ion implantation is a problem that needs to be resolved for all types of planar bipolar devices. The reproducibility of acceptor implants needs to be improved before CMOS ICs and many types of power device structures will be manufacturable. (orig.) 51 refs.

  6. A Novel Silicon Micromachined Integrated MCM Thermal Management System

    Kazmierczak, M. J.; Henderson, H. T.; Gerner, F. M.

    1997-01-01

    "Micromachining" is a chemical means of etching three-dimensional structures, typically in single- crystalline silicon. These techniques are leading toward what is coming to be referred to as MEMS (Micro Electro Mechanical Systems), where in addition to the ordinary two-dimensional (planar) microelectronics, it is possible to build three-dimensional n-ticromotors, electrically- actuated raicrovalves, hydraulic systems and much more on the same microchip. These techniques become possible because of differential etching rates of various crystallographic planes and materials used for semiconductor n-ticrofabfication. The University of Cincinnati group in collaboration with Karl Baker at NASA Lewis were the first to form micro heat pipes in silicon by the above techniques. Current work now in progress using MEMS technology is now directed towards the development of the next generation in MCM (Multi Chip Module) packaging. Here we propose to develop a complete electronic thermal management system which will allow densifica6on in chip stacking by perhaps two orders of magnitude. Furthermore the proposed technique will allow ordinary conu-nercial integrated chips to be utilized. Basically, the new technique involves etching square holes into a silicon substrate and then inserting and bonding commercially available integrated chips into these holes. For example, over a 100 1/4 in. by 1 /4 in. integrated chips can be placed on a 4 in. by 4 in. silicon substrate to form a Multi-Chip Module (MCM). Placing these MCM's in-line within an integrated rack then allows for three-diniensional stacking. Increased miniaturization of microelectronic circuits will lead to very high local heat fluxes. A high performance thermal management system will be specifically designed to remove the generated energy. More specifically, a compact heat exchanger with milli / microchannels will be developed and tested to remove the heat through the back side of this MCM assembly for moderate and high

  7. Extremely flexible nanoscale ultrathin body silicon integrated circuits on plastic.

    Shahrjerdi, Davood; Bedell, Stephen W

    2013-01-09

    In recent years, flexible devices based on nanoscale materials and structures have begun to emerge, exploiting semiconductor nanowires, graphene, and carbon nanotubes. This is primarily to circumvent the existing shortcomings of the conventional flexible electronics based on organic and amorphous semiconductors. The aim of this new class of flexible nanoelectronics is to attain high-performance devices with increased packing density. However, highly integrated flexible circuits with nanoscale transistors have not yet been demonstrated. Here, we show nanoscale flexible circuits on 60 Å thick silicon, including functional ring oscillators and memory cells. The 100-stage ring oscillators exhibit the stage delay of ~16 ps at a power supply voltage of 0.9 V, the best reported for any flexible circuits to date. The mechanical flexibility is achieved by employing the controlled spalling technology, enabling the large-area transfer of the ultrathin body silicon devices to a plastic substrate at room temperature. These results provide a simple and cost-effective pathway to enable ultralight flexible nanoelectronics with unprecedented level of system complexity based on mainstream silicon technology.

  8. Cobalt micro-magnet integration on silicon MOS quantum dots

    Camirand Lemyre, Julien; Rochette, Sophie; Anderson, John; Manginell, Ronald P.; Pluym, Tammy; Ward, Dan; Carroll, Malcom S.; Pioro-Ladrière, Michel

    Integration of cobalt micro-magnets on silicon metal-oxide-semiconductor (MOS) quantum dot devices has been investigated. The micro-magnets are fabricated in a lift-off process with e-beam lithography and deposited directly on top of an etched poly-silicon gate stack. Among the five resist stacks tested, one is found to be compatible with our MOS specific materials (Si and SiO2) . Moreover, devices with and without additional Al2O3 insulating layer show no additional gate leakage after processing. Preliminary transport data indicates electrostatic stability of our devices with integrated magnets. This work was performed, in part, at the Center for Integrated Nanotechnologies, an Office of Science User Facility operated for the U.S. Department of Energy (DOE) Office of Science. Sandia National Laboratories is a multi-program laboratory operated by Sandia Corporation, a Lockheed-Martin Company, for the U. S. Department of Energy under Contract No. DE-AC04-94AL85000.

  9. Localized synthesis, assembly and integration of silicon nanowires

    Englander, Ongi

    Localized synthesis, assembly and integration of one-dimensional silicon nanowires with MEMS structures is demonstrated and characterized in terms of local synthesis processes, electric-field assisted self-assembly, and a proof-of-concept nanoelectromechanical system (HEMS) demonstration. Emphasis is placed on the ease of integration, process control strategies, characterization techniques and the pursuit of integrated devices. A top-down followed by a bottom-up integration approach is utilized. Simple MEMS heater structures are utilized as the microscale platforms for the localized, bottom-up synthesis of one-dimensional nanostructures. Localized heating confines the high temperature region permitting only localized nanostructure synthesis and allowing the surroundings to remain at room temperature thus enabling CMOS compatible post-processing. The vapor-liquid-solid (VLS) process in the presence of a catalytic nanoparticle, a vapor phase reactant, and a specific temperature environment is successfully employed locally. Experimentally, a 5nm thick gold-palladium layer is used as the catalyst while silane is the vapor phase reactant. The current-voltage behavior of the MEMS structures can be correlated to the approximate temperature range required for the VLS reaction to take place. Silicon nanowires averaging 45nm in diameter and up to 29mum in length synthesized at growth rates of up to 1.5mum/min result. By placing two MEMS structures in close proximity, 4--10mum apart, localized silicon nanowire growth can be used to link together MEMS structures to yield a two-terminal, self-assembled micro-to-nano system. Here, one MEMS structure is designated as the hot growth structure while a nearby structure is designated as the cold secondary structure, whose role is to provide a natural stopping point for the VLS reaction. The application of a localized electric-field, 5 to 13V/mum in strength, during the synthesis process, has been shown to improve nanowire

  10. Hybrid Integrated Silicon Microfluidic Platform for Fluorescence Based Biodetection

    André Darveau

    2007-09-01

    Full Text Available The desideratum to develop a fully integrated Lab-on-a-chip device capable ofrapid specimen detection for high throughput in-situ biomedical diagnoses and Point-of-Care testing applications has called for the integration of some of the novel technologiessuch as the microfluidics, microphotonics, immunoproteomics and Micro ElectroMechanical Systems (MEMS. In the present work, a silicon based microfluidic device hasbeen developed for carrying out fluorescence based immunoassay. By hybrid attachment ofthe microfluidic device with a Spectrometer-on-chip, the feasibility of synthesizing anintegrated Lab-on-a-chip type device for fluorescence based biosensing has beendemonstrated. Biodetection using the microfluidic device has been carried out usingantigen sheep IgG and Alexafluor-647 tagged antibody particles and the experimentalresults prove that silicon is a compatible material for the present application given thevarious advantages it offers such as cost-effectiveness, ease of bulk microfabrication,superior surface affinity to biomolecules, ease of disposability of the device etc., and is thussuitable for fabricating Lab-on-a-chip type devices.

  11. Nanophotonic integrated circuits from nanoresonators grown on silicon.

    Chen, Roger; Ng, Kar Wei; Ko, Wai Son; Parekh, Devang; Lu, Fanglu; Tran, Thai-Truong D; Li, Kun; Chang-Hasnain, Connie

    2014-07-07

    Harnessing light with photonic circuits promises to catalyse powerful new technologies much like electronic circuits have in the past. Analogous to Moore's law, complexity and functionality of photonic integrated circuits depend on device size and performance scale. Semiconductor nanostructures offer an attractive approach to miniaturize photonics. However, shrinking photonics has come at great cost to performance, and assembling such devices into functional photonic circuits has remained an unfulfilled feat. Here we demonstrate an on-chip optical link constructed from InGaAs nanoresonators grown directly on a silicon substrate. Using nanoresonators, we show a complete toolkit of circuit elements including light emitters, photodetectors and a photovoltaic power supply. Devices operate with gigahertz bandwidths while consuming subpicojoule energy per bit, vastly eclipsing performance of prior nanostructure-based optoelectronics. Additionally, electrically driven stimulated emission from an as-grown nanostructure is presented for the first time. These results reveal a roadmap towards future ultradense nanophotonic integrated circuits.

  12. Integrating Micro- or Nanoscale Encapsulation Technology with Vitreous Cryopreservation: A New Strategy to Improve Biopreservation.

    Zheng, Y Y; Zhao, G

      BACKGROUND: None-uniform distributions of temperatures, limited freezing and thawing rates, and thermal stresses are three main hindering factors for successful vitreous cryopreservation of mass volume of biosamples. Micro- and nanoscale encapsulation, owning the intrinsic features to avoid those limitations introduced by the traditional approaches, has been opened up a new way for effective and high-efficiency biopreservation. This short review article summarizes recent advances in cell encapsulation technology for biopreservation by manipulating cells and biological agents in micro- or nanoscale volume droplets and microgels, and discusses its promising applications for future vitreous cryopreservation.

  13. Thermally-isolated silicon-based integrated circuits and related methods

    Wojciechowski, Kenneth; Olsson, Roy H.; Clews, Peggy J.; Bauer, Todd

    2017-05-09

    Thermally isolated devices may be formed by performing a series of etches on a silicon-based substrate. As a result of the series of etches, silicon material may be removed from underneath a region of an integrated circuit (IC). The removal of the silicon material from underneath the IC forms a gap between remaining substrate and the integrated circuit, though the integrated circuit remains connected to the substrate via a support bar arrangement that suspends the integrated circuit over the substrate. The creation of this gap functions to release the device from the substrate and create a thermally-isolated integrated circuit.

  14. Method of making thermally-isolated silicon-based integrated circuits

    Wojciechowski, Kenneth; Olsson, Roy; Clews, Peggy J.; Bauer, Todd

    2017-11-21

    Thermally isolated devices may be formed by performing a series of etches on a silicon-based substrate. As a result of the series of etches, silicon material may be removed from underneath a region of an integrated circuit (IC). The removal of the silicon material from underneath the IC forms a gap between remaining substrate and the integrated circuit, though the integrated circuit remains connected to the substrate via a support bar arrangement that suspends the integrated circuit over the substrate. The creation of this gap functions to release the device from the substrate and create a thermally-isolated integrated circuit.

  15. Roadmap for integration of InP based photonics and silicon electronics

    Williams, K.A.

    2015-01-01

    We identify the synergies and a roadmap for the intimate integration of InP photonic integrated circuits and Silicon electronic ICs using wafer-scale processes. Advantages are foreseen in terms of bandwidth, energy savings and package simplification.

  16. Plasmonic nanofocusing of light in an integrated silicon photonics platform.

    Desiatov, Boris; Goykhman, Ilya; Levy, Uriel

    2011-07-04

    The capability to focus electromagnetic energy at the nanoscale plays an important role in nanoscinece and nanotechnology. It allows enhancing light matter interactions at the nanoscale with applications related to nonlinear optics, light emission and light detection. It may also be used for enhancing resolution in microscopy, lithography and optical storage systems. Hereby we propose and experimentally demonstrate the nanoscale focusing of surface plasmons by constructing an integrated plasmonic/photonic on chip nanofocusing device in silicon platform. The device was tested directly by measuring the optical intensity along it using a near-field microscope. We found an order of magnitude enhancement of the intensity at the tip's apex. The spot size is estimated to be 50 nm. The demonstrated device may be used as a building block for "lab on a chip" systems and for enhancing light matter interactions at the apex of the tip.

  17. Strategies for doped nanocrystalline silicon integration in silicon heterojunction solar cells

    Seif, J.; Descoeudres, A.; Nogay, G.; Hänni, S.; de Nicolas, S.M.; Holm, N.; Geissbühler, J.; Hessler-Wyser, A.; Duchamp, M.; Dunin-Borkowski, R.E.; Ledinský, Martin; De Wolf, S.; Ballif, C.

    2016-01-01

    Roč. 6, č. 5 (2016), s. 1132-1140 ISSN 2156-3381 R&D Projects: GA MŠk LM2015087 Institutional support: RVO:68378271 Keywords : microcrystalline silicon * nanocrystalline silicon * silicon heterojunctions (SHJs) * solar cells Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.712, year: 2016

  18. Encapsulation of nuclear wastes

    Arnold, J.L.; Boyle, R.W.

    1978-01-01

    Toxic waste materials are encapsulated by the method wherein the waste material in liquid or finely divided solid form is uniformly dispersed in a vinyl ester resin or an unsaturated polyester and the resin cured under conditions that the exotherm does not rise above the temperature at which the integrity of the encapsulating material is destroyed

  19. Silicon photonics integrated circuits: a manufacturing platform for high density, low power optical I/O's.

    Absil, Philippe P; Verheyen, Peter; De Heyn, Peter; Pantouvaki, Marianna; Lepage, Guy; De Coster, Jeroen; Van Campenhout, Joris

    2015-04-06

    Silicon photonics integrated circuits are considered to enable future computing systems with optical input-outputs co-packaged with CMOS chips to circumvent the limitations of electrical interfaces. In this paper we present the recent progress made to enable dense multiplexing by exploiting the integration advantage of silicon photonics integrated circuits. We also discuss the manufacturability of such circuits, a key factor for a wide adoption of this technology.

  20. Integrated nanophotonic frequency shifter on the silicon-organic hybrid (SOH) platform for laser vibrometry

    Lauermann, M.; Weimann, C.; Palmer, R.; Schindler, P. C.; Koeber, S.; Freude, W.; Koos, C.; Rembe, C.

    2014-01-01

    We demonstrate a waveguide-based frequency shifter on the silicon photonic platform, enabling frequency shifts up to 10 GHz. The device is realized by silicon-organic hybrid (SOH) integration. Temporal shaping of the drive signal allows the suppression of spurious side-modes by more than 23 dB

  1. Integrated nanophotonic frequency shifter on the silicon-organic hybrid (SOH) platform for laser vibrometry

    Lauermann, M.; Weimann, C.; Palmer, R.; Schindler, P. C. [Institute of Photonics and Quantum Electronics, Karlsruhe Institute of Technology, 76131 Karlsruhe (Germany); Koeber, S.; Freude, W., E-mail: christian.koos@kit.edu; Koos, C., E-mail: christian.koos@kit.edu [Institute of Photonics and Quantum Electronics, Karlsruhe Institute of Technology, 76131 Karlsruhe, Germany and Institute of Microstructure Technology, Karlsruhe Institute of Technology, 76344 Eggenstein-Leopoldshafen (Germany); Rembe, C. [Polytec GmbH, 76337 Waldbronn (Germany)

    2014-05-27

    We demonstrate a waveguide-based frequency shifter on the silicon photonic platform, enabling frequency shifts up to 10 GHz. The device is realized by silicon-organic hybrid (SOH) integration. Temporal shaping of the drive signal allows the suppression of spurious side-modes by more than 23 dB.

  2. Dynamics of electrochemical lithiation/delithiation of graphene-encapsulated silicon nanoparticles studied by in-situ TEM.

    Luo, Langli; Wu, Jinsong; Luo, Jiayan; Huang, Jiaxing; Dravid, Vinayak P

    2014-01-24

    The incorporation of nanostructured carbon has been recently reported as an effective approach to improve the cycling stability when Si is used as high-capacity anodes for the next generation Li-ion battery. However, the mechanism of such notable improvement remains unclear. Herein, we report in-situ transmission electron microscopy (TEM) studies to directly observe the dynamic electrochemical lithiation/delithiation processes of crumpled graphene-encapsulated Si nanoparticles to understand their physical and chemical transformations. Unexpectedly, in the first lithiation process, crystalline Si nanoparticles undergo an isotropic to anisotropic transition, which is not observed in pure crystalline and amorphous Si nanoparticles. Such a surprising phenomenon arises from the uniformly distributed localized voltage around the Si nanoparticles due to the highly conductive graphene sheets. It is observed that the intimate contact between graphene and Si is maintained during volume expansion/contraction. Electrochemical sintering process where small Si nanoparticles react and merge together to form large agglomerates following spikes in localized electric current is another problem for batteries. In-situ TEM shows that graphene sheets help maintain the capacity even in the course of electrochemical sintering. Such in-situ TEM observations provide valuable phenomenological insights into electrochemical phenomena, which may help optimize the configuration for further improved performance.

  3. Crystalline Silicon Interconnected Strips (XIS). Introduction to a New, Integrated Device and Module Concept

    Van Roosmalen, J.; Bronsveld, P.; Mewe, A.; Janssen, G.; Stodolny, M.; Cobussen-Pool, E.; Bennett, I.; Weeber, A.; Geerligs, B. [ECN Solar Energy, P.O. Box 1, NL-1755 ZG, Petten (Netherlands)

    2012-06-15

    A new device concept for high efficiency, low cost, wafer based silicon solar cells is introduced. To significantly lower the costs of Si photovoltaics, high efficiencies and large reductions of metals and silicon costs are required. To enable this, the device architecture was adapted into low current devices by applying thin silicon strips, to which a special high efficiency back-contact heterojunction cell design was applied. Standard industrial production processes can be used for our fully integrated cell and module design, with a cost reduction potential below 0.5 euro/Wp. First devices have been realized demonstrating the principle of a series connected back contact hybrid silicon heterojunction module concept.

  4. Monolithic nanoscale photonics-electronics integration in silicon and other group IV elements

    Radamson, Henry

    2014-01-01

    Silicon technology is evolving rapidly, particularly in board-to-board or chip-to chip applications. Increasingly, the electronic parts of silicon technology will carry out the data processing, while the photonic parts take care of the data communication. For the first time, this book describes the merging of photonics and electronics in silicon and other group IV elements. It presents the challenges, the limitations, and the upcoming possibilities of these developments. The book describes the evolution of CMOS integrated electronics, status and development, and the fundamentals of silicon p

  5. Graphene-on-silicon hybrid plasmonic-photonic integrated circuits.

    Xiao, Ting-Hui; Cheng, Zhenzhou; Goda, Keisuke

    2017-06-16

    Graphene surface plasmons (GSPs) have shown great potential in biochemical sensing, thermal imaging, and optoelectronics. To excite GSPs, several methods based on the near-field optical microscope and graphene nanostructures have been developed in the past few years. However, these methods suffer from their bulky setups and low GSP-excitation efficiency due to the short interaction length between free-space vertical excitation light and the atomic layer of graphene. Here we present a CMOS-compatible design of graphene-on-silicon hybrid plasmonic-photonic integrated circuits that achieve the in-plane excitation of GSP polaritons as well as localized surface plasmon (SP) resonance. By employing a suspended membrane slot waveguide, our design is able to excite GSP polaritons on a chip. Moreover, by utilizing a graphene nanoribbon array, we engineer the transmission spectrum of the waveguide by excitation of localized SP resonance. Our theoretical and computational study paves a new avenue to enable, modulate, and monitor GSPs on a chip, potentially applicable for the development of on-chip electro-optic devices.

  6. Silicon Integrated Dual-Mode Interferometer with Differential Outputs

    Niklas Hoppe

    2017-09-01

    Full Text Available The dual-mode interferometer (DMI is an attractive alternative to Mach-Zehnder interferometers for sensor purposes, achieving sensitivities to refractive index changes close to state-of-the-art. Modern designs on silicon-on-insulator (SOI platforms offer thermally stable and compact devices with insertion losses of less than 1 dB and high extinction ratios. Compact arrays of multiple DMIs in parallel are easy to fabricate due to the simple structure of the DMI. In this work, the principle of operation of an integrated DMI with differential outputs is presented which allows the unambiguous phase shift detection with a single wavelength measurement, rather than using a wavelength sweep and evaluating the optical output power spectrum. Fluctuating optical input power or varying attenuation due to different analyte concentrations can be compensated by observing the sum of the optical powers at the differential outputs. DMIs with two differential single-mode outputs are fabricated in a 250 nm SOI platform, and corresponding measurements are shown to explain the principle of operation in detail. A comparison of DMIs with the conventional Mach-Zehnder interferometer using the same technology concludes this work.

  7. Thermal performances of ETFE cushion roof integrated amorphous silicon photovoltaic

    Hu, Jianhui; Chen, Wujun; Qiu, Zhenyu; Zhao, Bing; Zhou, Jinyu; Qu, Yegao

    2015-01-01

    Highlights: • Thermal performances of a three layer ETFE cushion integrated a-Si PV is evaluated. • Temperature of a-Si PV obviously affects temperature field and temperature boundary. • The maximum temperature difference of 3.4 K between measured and numerical results. • Main transport mechanisms in upper and lower chambers are convection and conduction. • Heat transfer coefficients of this roof are less than those of other ETFE cushion roofs. - Abstract: Thermal performances of the ETFE cushion roof integrated amorphous silicon photovoltaic (a-Si PV) are essential to estimate building performances, such as temperature distribution and heat transfer coefficient. To investigate these thermal performances, an experimental mock-up composed of a-Si PV and a three-layer ETFE cushion roof was built and the experiment was carried out under summer sunny condition. Meanwhile, numerical model with real boundary conditions was performed in this paper. The experimental results show that the temperature sequence of the three layers was the middle, top and bottom layer and that the PV temperature caused by solar irradiance was 353.8 K. This gives evidence that the PV has a significant effect on the temperature distribution. The experimental temperature was in good agreement with the corresponding location of the numerical temperature since the maximum temperature difference was only 3.4 K. Therefore, the numerical results were justified and then used to analyze the airflow characteristics and calculate the thermal performances. For the airflow characteristics, it is found that the temperature distribution was not uniform and the main transport mechanisms in the upper and lower chambers formed by the three layers were the convection and conduction, respectively. For the thermal performances, the surface convective heat transfer coefficients were obtained, which have validated that thermal performances of the three-layer ETFE cushion integrated a-Si PV are better than

  8. Optoelectronic Device Integration in Silicon (OpSIS)

    2015-10-26

    silicon-on-insulator," Opt. Express 22, 17872-17879 (2014) Y. Yang, C. Galland, Y. Liu, K. Tan , R. Ding, Q. Li, K. Bergman, T. Baehr-Jones, M...Jaeger, Nicolas AF; Chrostowski, Lukas; “Electrically tunable resonant filters in phase-shifted contra- directional couplers” IEEE Group IV Photonics... Nicolas AF; Chrostowski, Lukas; “Silicon photonic grating-assisted, contra-directional couplers” Optics express Vol. 21, No. 3; 3633-3650 (2013

  9. Integration of the End Cap TEC+ of the CMS Silicon Strip Tracker

    Adler, Volker; Ageron, Michel; Agram, Jean-Laurent; Atz, Bernd; Barvich, Tobias; Baulieu, Guillaume; Beaumont, Willem; Beissel, Franz; Bergauer, Thomas; Berst, Jean-Daniel; Blüm, Peter; Bock, E; Bogelsbacher, F; de Boer, Wim; Bonnet, Jean-Luc; Bonnevaux, Alain; Boudoul, Gaelle; Bouhali, Othmane; Braunschweig, Wolfgang; Bremer, R; Brom, Jean-Marie; Butz, Erik; Chabanat, Eric; Chabert, Eric Christian; Clerbaux, Barbara; Contardo, Didier; De Callatay, Bernard; Dehm, Philip; Delaere, Christophe; Della Negra, Rodolphe; Dewulf, Jean-Paul; D'Hondt, Jorgen; Didierjean, Francois; Dierlamm, Alexander; Dirkes, Guido; Dragicevic, Marko; Drouhin, Frédéric; Ernenwein, Jean-Pierre; Esser, Hans; Estre, Nicolas; Fahrer, Manuel; Feld, Lutz; Fernández, J; Florins, Benoit; Flossdorf, Alexander; Flucke, Gero; Flügge, Günter; Fontaine, Jean-Charles; Freudenreich, Klaus; Frey, Martin; Friedl, Markus; Furgeri, Alexander; Giraud, Noël; Goerlach, Ulrich; Goorens, Robert; Graehling, Philippe; Grégoire, Ghislain; Gregoriev, E; Gross, Laurent; Hansel, S; Haroutunian, Roger; Hartmann, Frank; Heier, Stefan; Hermanns, Thomas; Heydhausen, Dirk; Heyninck, Jan; Hosselet, J; Hrubec, Josef; Jahn, Dieter; Juillot, Pierre; Kaminski, Jochen; Karpinski, Waclaw; Kaussen, Gordon; Keutgen, Thomas; Klanner, Robert; Klein, Katja; König, Stefan; Kosbow, M; Krammer, Manfred; Ledermann, Bernhard; Lemaître, Vincent; De Lentdecker, Gilles; Linn, Alexander; Lounis, Abdenour; Lübelsmeyer, Klaus; Lumb, Nicholas; Maazouzi, Chaker; Mahmoud, Tariq; Michotte, Daniel; Militaru, Otilia; Mirabito, Laurent; Müller, Thomas; Neukermans, Lionel; Ollivetto, C; Olzem, Jan; Ostapchuk, Andrey; Pandoulas, Demetrios; Pein, Uwe; Pernicka, Manfred; Perriès, Stephane; Piaseki, C; Pierschel, Gerhard; Piotrzkowski, Krzysztof; Poettgens, Michael; Pooth, Oliver; Rouby, Xavier; Sabellek, Andreas; Schael, Stefan; Schirm, Norbert; Schleper, Peter; Schmitz, Stefan Antonius; Schultz von Dratzig, Arndt; Siedling, Rolf; Simonis, Hans-Jürgen; Stahl, Achim; Steck, Pia; Steinbruck, G; Stoye, Markus; Strub, Roger; Tavernier, Stefaan; Teyssier, Daniel; Theel, Andreas; Trocmé, Benjamin; Udo, Fred; Van der Donckt, M; Van der Velde, C; Van Hove, Pierre; Vanlaer, Pascal; Van Lancker, Luc; Van Staa, Rolf; Vanzetto, Sylvain; Weber, Markus; Weiler, Thomas; Weseler, Siegfried; Wickens, John; Wittmer, Bruno; Wlochal, Michael; De Wolf, Eddi A; Zhukov, Valery; Zoeller, Marc Henning

    2009-01-01

    The silicon strip tracker of the CMS experiment has been completed and inserted into the CMS detector in late 2007. The largest sub-system of the tracker is its end cap system, comprising two large end caps (TEC) each containing 3200 silicon strip modules. To ease construction, the end caps feature a modular design: groups of about 20 silicon modules are placed on sub-assemblies called petals and these self-contained elements are then mounted into the TEC support structures. Each end cap consists of 144 petals, and the insertion of these petals into the end cap structure is referred to as TEC integration. The two end caps were integrated independently in Aachen (TEC+) and at CERN (TEC--). This note deals with the integration of TEC+, describing procedures for end cap integration and for quality control during testing of integrated sections of the end cap and presenting results from the testing.

  10. Al transmon qubits on silicon-on-insulator for quantum device integration

    Keller, Andrew J.; Dieterle, Paul B.; Fang, Michael; Berger, Brett; Fink, Johannes M.; Painter, Oskar

    2017-07-01

    We present the fabrication and characterization of an aluminum transmon qubit on a silicon-on-insulator substrate. Key to the qubit fabrication is the use of an anhydrous hydrofluoric vapor process which selectively removes the lossy silicon oxide buried underneath the silicon device layer. For a 5.6 GHz qubit measured dispersively by a 7.1 GHz resonator, we find T1 = 3.5 μs and T2* = 2.2 μs. This process in principle permits the co-fabrication of silicon photonic and mechanical elements, providing a route towards chip-scale integration of electro-opto-mechanical transducers for quantum networking of superconducting microwave quantum circuits. The additional processing steps are compatible with established fabrication techniques for aluminum transmon qubits on silicon.

  11. Methods and mechanisms of gettering of silicon structures in the production of integrated circuits

    Pilipenko V. A.

    2013-05-01

    Full Text Available Increasing the degree of integration of hardware components imposes more stringent requirements for the reduction of the concentration of contaminants and oxidation stacking faults in the original silicon wafers with its preservation in the IC manufacturing process cycle. This causes high relevance of the application of gettering in modern microelectronic technology. The existing methods of silicon wafers gettering and the mechanisms of their occurrence are considered.

  12. Integrated GaN photonic circuits on silicon (100) for second harmonic generation

    Xiong, Chi; Pernice, Wolfram; Ryu, Kevin K.; Schuck, Carsten; Fong, King Y.; Palacios, Tomas; Tang, Hong X.

    2014-01-01

    We demonstrate second order optical nonlinearity in a silicon architecture through heterogeneous integration of single-crystalline gallium nitride (GaN) on silicon (100) substrates. By engineering GaN microrings for dual resonance around 1560 nm and 780 nm, we achieve efficient, tunable second harmonic generation at 780 nm. The \\{chi}(2) nonlinear susceptibility is measured to be as high as 16 plus minus 7 pm/V. Because GaN has a wideband transparency window covering ultraviolet, visible and ...

  13. Ultrahigh-density trench cpacitors in silicon and their application to integrated DC-DC conversion

    Roozeboom, F.; Bergveld, H.J.; Nowak, K.; Le Cornec, F.; Guiraud, L.; Bunel, C.; Iochem, S.; Ferreira, J.; Ledain, S.; Pieraerts, E.; Pommier, M.

    2009-01-01

    This paper addresses silicon-based integration of passive components applied to 3D integration with dies of other technologies within one package. Particularly, the development of high-density trench capacitors has enabled the realization of small-formfactor DC-DC converters. As illustration, an

  14. Experimental Demonstration of 7 Tb/s Switching Using Novel Silicon Photonic Integrated Circuit

    Ding, Yunhong; Kamchevska, Valerija; Dalgaard, Kjeld

    2016-01-01

    We demonstrate BER performance <10^-9 for a 1 Tb/s/core transmission over 7-core fiber and SDM switching using a novel silicon photonic integrated circuit composed of a 7x7 fiber switch and low loss SDM couplers.......We demonstrate BER performance integrated circuit composed of a 7x7 fiber switch and low loss SDM couplers....

  15. Functionalization and microfluidic integration of silicon nanowire biologically gated field effect transistors

    Pfreundt, Andrea

    This thesis deals with the development of a novel biosensor for the detection of biomolecules based on a silicon nanowire biologically gated field-effect transistor and its integration into a point-of-care device. The sensor and electrical on-chip integration was developed in a different project...

  16. Functionalization and microfluidic integration of silicon nanowire biologically gated field effect transistors

    Pfreundt, Andrea; Svendsen, Winnie Edith; Dimaki, Maria

    2016-01-01

    This thesis deals with the development of a novel biosensor for the detection of biomolecules based on a silicon nanowire biologically gated field-effect transistor and its integration into a point-of-care device. The sensor and electrical on-chip integration was developed in a different project...

  17. Characterization of porous silicon integrated in liquid chromatography chips

    Tiggelaar, Roald M.; Verdoold, Vincent; Eghbali, H.; Desmet, G.; Gardeniers, Johannes G.E.

    2009-01-01

    Properties of porous silicon which are relevant for use of the material as a stationary phase in liquid chromatography chips, like porosity, pore size and specific surface area, were determined with high-resolution SEM and N2 adsorption–desorption isotherms. For the anodization conditions

  18. Antibody-integrated and functionalized graphite-encapsulated magnetic beads, produced using ammonia gas plasma technology, for capturing Salmonella.

    Sakudo, Akikazu; Chou, Han; Nagatsu, Masaaki

    2015-03-01

    Salmonella spp. is the single and most important causative agent of foodborne infections, especially involving foods such as eggs, milk and meat. To prevent infection, a reliable surveillance system is required that can quickly and sensitively detect Salmonella. Here, we describe the development of antibody-integrated magnetic beads that are functionalized by a novel strategy using ammonia gas plasma. Ammonia plasma, produced by a radio frequency (RF) power supply, was allowed to react with the surface of graphite-encapsulated magnetic beads, resulting in the introduction of amino groups. An anti-Salmonella antibody was then anchored by sulfide groups present on the protein surface to the amino groups of the magnetic beads via N-succinimidyl 3-(2-pyridyldithio) propionate (SPDP). The potential usefulness of these magnetic beads for capturing Salmonella was examined as follows. The beads were incubated with Salmonella in liquid medium and then separated from the supernatant by applying a magnetic field. After thorough washing, adsorption of Salmonella to the beads was confirmed by immunochromatography, polymerase chain reaction and a direct culture assay. Our findings indicate that the capture and concentration of Salmonella using the antibody-integrated magnetic beads was more efficient than commercial Dynabeads® anti-Salmonella, which are conventionally used for concentrating Salmonella from liquid cultures. We believe this novel bead technology will contribute to the enhanced detection of Salmonella. Copyright © 2015 Elsevier Ltd. All rights reserved.

  19. A new semicustom integrated bipolar amplifier for silicon strip detectors

    Zimmerman, T.

    1989-01-01

    The QPA02 is a four channel DC coupled two stage transimpedance amplifier designed at Fermilab on a semicustom linear array (Quickchip 2S) manufactured by Tektronix. The chip was developed as a silicon strip amplifier but may have other applications as well. Each channel consists of a preamplifier and a second stage amplifier/sharper with differential output which can directly drive a transmission line (90 to 140 ohms). External bypass capacitors are the only discrete components required. QPA02 has been tested and demonstrated to be an effective silicon strip amplifier. Other applications may exist which can use this amplifier or a modified version of this amplifier. For example, another design is now in progress for a wire chamber amplifier, QPA03, to be reported later. Only a relatively small effort was required to modify the design and layout for this application. 11 figs

  20. Three-Dimensional Integrated Circuit (3D IC) Key Technology: Through-Silicon Via (TSV).

    Shen, Wen-Wei; Chen, Kuan-Neng

    2017-12-01

    3D integration with through-silicon via (TSV) is a promising candidate to perform system-level integration with smaller package size, higher interconnection density, and better performance. TSV fabrication is the key technology to permit communications between various strata of the 3D integration system. TSV fabrication steps, such as etching, isolation, metallization processes, and related failure modes, as well as other characterizations are discussed in this invited review paper.

  1. Progress in complementary metal–oxide–semiconductor silicon photonics and optoelectronic integrated circuits

    Chen Hongda; Zhang Zan; Huang Beiju; Mao Luhong; Zhang Zanyun

    2015-01-01

    Silicon photonics is an emerging competitive solution for next-generation scalable data communications in different application areas as high-speed data communication is constrained by electrical interconnects. Optical interconnects based on silicon photonics can be used in intra/inter-chip interconnects, board-to-board interconnects, short-reach communications in datacenters, supercomputers and long-haul optical transmissions. In this paper, we present an overview of recent progress in silicon optoelectronic devices and optoelectronic integrated circuits (OEICs) based on a complementary metal–oxide–semiconductor-compatible process, and focus on our research contributions. The silicon optoelectronic devices and OEICs show good characteristics, which are expected to benefit several application domains, including communication, sensing, computing and nonlinear systems. (review)

  2. High-dimensional quantum key distribution based on multicore fiber using silicon photonic integrated circuits

    Ding, Yunhong; Bacco, Davide; Dalgaard, Kjeld

    2017-01-01

    is intrinsically limited to 1 bit/photon. Here we propose and experimentally demonstrate, for the first time, a high-dimensional quantum key distribution protocol based on space division multiplexing in multicore fiber using silicon photonic integrated lightwave circuits. We successfully realized three mutually......-dimensional quantum states, and enables breaking the information efficiency limit of traditional quantum key distribution protocols. In addition, the silicon photonic circuits used in our work integrate variable optical attenuators, highly efficient multicore fiber couplers, and Mach-Zehnder interferometers, enabling...

  3. Encapsulation methods for organic electrical devices

    Blum, Yigal D.; Chu, William Siu-Keung; MacQueen, David Brent; Shi, Yijian

    2013-06-18

    The disclosure provides methods and materials suitable for use as encapsulation barriers in electronic devices. In one embodiment, for example, there is provided an electroluminescent device or other electronic device encapsulated by alternating layers of a silicon-containing bonding material and a ceramic material. The encapsulation methods provide, for example, electronic devices with increased stability and shelf-life. The invention is useful, for example, in the field of microelectronic devices.

  4. Compact polarization beam splitter for silicon photonic integrated circuits with a 340-nm-thick silicon core layer.

    Li, Chenlei; Dai, Daoxin

    2017-11-01

    A polarization beam splitter (PBS) is proposed and realized for silicon photonic integrated circuits with a 340-nm-thick silicon core layer by introducing an asymmetric directional coupler (ADC), which consists of a silicon-on-insulator (SOI) nanowire and a subwavelength grating (SWG) waveguide. The SWG is introduced to provide an optical waveguide which has much higher birefringence than a regular 340-nm-thick SOI nanowire, so that it is possible to make the phase-matching condition satisfied for TE polarization only in the present design when the waveguide dimensions are optimized. Meanwhile, there is a significant phase mismatching for TM polarization automatically. In this way, the present ADC enables strong polarization selectivity to realize a PBS that separates TE and TM polarizations to the cross and through ports, respectively. The realized PBS has a length of ∼2  μm for the coupling region. For the fabricated PBS, the extinction ratio (ER) is 15-30 dB and the excess loss is 0.2-2.6 dB for TE polarization while the ER is 20-27 dB and the excess loss is 0.3-2.8 dB for TM polarization when operating in the wavelength range of 1520-1580 nm.

  5. The integration of InGaP LEDs with CMOS on 200 mm silicon wafers

    Wang, Bing; Lee, Kwang Hong; Wang, Cong; Wang, Yue; Made, Riko I.; Sasangka, Wardhana Aji; Nguyen, Viet Cuong; Lee, Kenneth Eng Kian; Tan, Chuan Seng; Yoon, Soon Fatt; Fitzgerald, Eugene A.; Michel, Jurgen

    2017-02-01

    The integration of photonics and electronics on a converged silicon CMOS platform is a long pursuit goal for both academe and industry. We have been developing technologies that can integrate III-V compound semiconductors and CMOS circuits on 200 mm silicon wafers. As an example we present our work on the integration of InGaP light-emitting diodes (LEDs) with CMOS. The InGaP LEDs were epitaxially grown on high-quality GaAs and Ge buffers on 200 mm (100) silicon wafers in a MOCVD reactor. Strain engineering was applied to control the wafer bow that is induced by the mismatch of coefficients of thermal expansion between III-V films and silicon substrate. Wafer bonding was used to transfer the foundry-made silicon CMOS wafers to the InGaP LED wafers. Process trenches were opened on the CMOS layer to expose the underneath III-V device layers for LED processing. We show the issues encountered in the 200 mm processing and the methods we have been developing to overcome the problems.

  6. Heterogeneously integrated silicon photonics for the mid-infrared and spectroscopic sensing.

    Chen, Yu; Lin, Hongtao; Hu, Juejun; Li, Mo

    2014-07-22

    Besides being the foundational material for microelectronics, crystalline silicon has long been used for the production of infrared lenses and mirrors. More recently, silicon has become the key material to achieve large-scale integration of photonic devices for on-chip optical interconnect and signal processing. For optics, silicon has significant advantages: it offers a very high refractive index and is highly transparent in the spectral range from 1.2 to 8 μm. To fully exploit silicon’s superior performance in a remarkably broad range and to enable new optoelectronic functionalities, here we describe a general method to integrate silicon photonic devices on arbitrary foreign substrates. In particular, we apply the technique to integrate silicon microring resonators on mid-infrared compatible substrates for operation in the mid-infrared. These high-performance mid-infrared optical resonators are utilized to demonstrate, for the first time, on-chip cavity-enhanced mid-infrared spectroscopic analysis of organic chemicals with a limit of detection of less than 0.1 ng.

  7. Encapsulate-and-peel: fabricating carbon nanotube CMOS integrated circuits in a flexible ultra-thin plastic film.

    Gao, Pingqi; Zhang, Qing

    2014-02-14

    Fabrication of single-walled carbon nanotube thin film (SWNT-TF) based integrated circuits (ICs) on soft substrates has been challenging due to several processing-related obstacles, such as printed/transferred SWNT-TF pattern and electrode alignment, electrical pad/channel material/dielectric layer flatness, adherence of the circuits onto the soft substrates etc. Here, we report a new approach that circumvents these challenges by encapsulating pre-formed SWNT-TF-ICs on hard substrates into polyimide (PI) and peeling them off to form flexible ICs on a large scale. The flexible SWNT-TF-ICs show promising performance comparable to those circuits formed on hard substrates. The flexible p- and n-type SWNT-TF transistors have an average mobility of around 60 cm(2) V(-1) s(-1), a subthreshold slope as low as 150 mV dec(-1), operating gate voltages less than 2 V, on/off ratios larger than 10(4) and a switching speed of several kilohertz. The post-transfer technique described here is not only a simple and cost-effective pathway to realize scalable flexible ICs, but also a feasible method to fabricate flexible displays, sensors and solar cells etc.

  8. Encapsulate-and-peel: fabricating carbon nanotube CMOS integrated circuits in a flexible ultra-thin plastic film

    Gao, Pingqi; Zhang, Qing

    2014-01-01

    Fabrication of single-walled carbon nanotube thin film (SWNT-TF) based integrated circuits (ICs) on soft substrates has been challenging due to several processing-related obstacles, such as printed/transferred SWNT-TF pattern and electrode alignment, electrical pad/channel material/dielectric layer flatness, adherence of the circuits onto the soft substrates etc. Here, we report a new approach that circumvents these challenges by encapsulating pre-formed SWNT-TF-ICs on hard substrates into polyimide (PI) and peeling them off to form flexible ICs on a large scale. The flexible SWNT-TF-ICs show promising performance comparable to those circuits formed on hard substrates. The flexible p- and n-type SWNT-TF transistors have an average mobility of around 60 cm 2  V −1  s −1 , a subthreshold slope as low as 150 mV  dec −1 , operating gate voltages less than 2 V, on/off ratios larger than 10 4 and a switching speed of several kilohertz. The post-transfer technique described here is not only a simple and cost-effective pathway to realize scalable flexible ICs, but also a feasible method to fabricate flexible displays, sensors and solar cells etc. (paper)

  9. Ultrafast triggered transient energy storage by atomic layer deposition into porous silicon for integrated transient electronics

    Douglas, Anna; Muralidharan, Nitin; Carter, Rachel; Share, Keith; Pint, Cary L.

    2016-03-01

    Here we demonstrate the first on-chip silicon-integrated rechargeable transient power source based on atomic layer deposition (ALD) coating of vanadium oxide (VOx) into porous silicon. A stable specific capacitance above 20 F g-1 is achieved until the device is triggered with alkaline solutions. Due to the rational design of the active VOx coating enabled by ALD, transience occurs through a rapid disabling step that occurs within seconds, followed by full dissolution of all active materials within 30 minutes of the initial trigger. This work demonstrates how engineered materials for energy storage can provide a basis for next-generation transient systems and highlights porous silicon as a versatile scaffold to integrate transient energy storage into transient electronics.Here we demonstrate the first on-chip silicon-integrated rechargeable transient power source based on atomic layer deposition (ALD) coating of vanadium oxide (VOx) into porous silicon. A stable specific capacitance above 20 F g-1 is achieved until the device is triggered with alkaline solutions. Due to the rational design of the active VOx coating enabled by ALD, transience occurs through a rapid disabling step that occurs within seconds, followed by full dissolution of all active materials within 30 minutes of the initial trigger. This work demonstrates how engineered materials for energy storage can provide a basis for next-generation transient systems and highlights porous silicon as a versatile scaffold to integrate transient energy storage into transient electronics. Electronic supplementary information (ESI) available: (i) Experimental details for ALD and material fabrication, ellipsometry film thickness, preparation of gel electrolyte and separator, details for electrochemical measurements, HRTEM image of VOx coated porous silicon, Raman spectroscopy for VOx as-deposited as well as annealed in air for 1 hour at 450 °C, SEM and transient behavior dissolution tests of uniformly coated VOx on

  10. Hybrid Integration of Solid-State Quantum Emitters on a Silicon Photonic Chip.

    Kim, Je-Hyung; Aghaeimeibodi, Shahriar; Richardson, Christopher J K; Leavitt, Richard P; Englund, Dirk; Waks, Edo

    2017-12-13

    Scalable quantum photonic systems require efficient single photon sources coupled to integrated photonic devices. Solid-state quantum emitters can generate single photons with high efficiency, while silicon photonic circuits can manipulate them in an integrated device structure. Combining these two material platforms could, therefore, significantly increase the complexity of integrated quantum photonic devices. Here, we demonstrate hybrid integration of solid-state quantum emitters to a silicon photonic device. We develop a pick-and-place technique that can position epitaxially grown InAs/InP quantum dots emitting at telecom wavelengths on a silicon photonic chip deterministically with nanoscale precision. We employ an adiabatic tapering approach to transfer the emission from the quantum dots to the waveguide with high efficiency. We also incorporate an on-chip silicon-photonic beamsplitter to perform a Hanbury-Brown and Twiss measurement. Our approach could enable integration of precharacterized III-V quantum photonic devices into large-scale photonic structures to enable complex devices composed of many emitters and photons.

  11. Integrated programmable photonic filter on the silicon -on- insulator platform

    Liao, Shasha; Ding, Yunhong; Peucheret, Christophe

    2014-01-01

    We propose and demonstrate a silicon - on - insulator (SOI) on - chip programmable filter based on a four - tap finite impulse response structure. The photonic filter is programmable thanks to amplitude and phase modulation of each tap controlled by thermal heater s. We further demonstrate...... the tunability of the filter central wavelength, bandwidth and variable passband shape. The tuning range of the central wavelength is at least 42% of the free spectral range. The bandwidth tuning range is at least half of the free spectral range. Our scheme has distinct advantages of compactness, capability...

  12. Silicon analog components device design, process integration, characterization, and reliability

    El-Kareh, Badih

    2015-01-01

    This book covers modern analog components, their characteristics, and interactions with process parameters. It serves as a comprehensive guide, addressing both the theoretical and practical aspects of modern silicon devices and the relationship between their electrical properties and processing conditions. Based on the authors’ extensive experience in the development of analog devices, this book is intended for engineers and scientists in semiconductor research, development and manufacturing. The problems at the end of each chapter and the numerous charts, figures and tables also make it appropriate for use as a text in graduate and advanced undergraduate courses in electrical engineering and materials science.

  13. An innovative large scale integration of silicon nanowire-based field effect transistors

    Legallais, M.; Nguyen, T. T. T.; Mouis, M.; Salem, B.; Robin, E.; Chenevier, P.; Ternon, C.

    2018-05-01

    Since the early 2000s, silicon nanowire field effect transistors are emerging as ultrasensitive biosensors while offering label-free, portable and rapid detection. Nevertheless, their large scale production remains an ongoing challenge due to time consuming, complex and costly technology. In order to bypass these issues, we report here on the first integration of silicon nanowire networks, called nanonet, into long channel field effect transistors using standard microelectronic process. A special attention is paid to the silicidation of the contacts which involved a large number of SiNWs. The electrical characteristics of these FETs constituted by randomly oriented silicon nanowires are also studied. Compatible integration on the back-end of CMOS readout and promising electrical performances open new opportunities for sensing applications.

  14. Integrating photonics with silicon nanoelectronics for the next generation of systems on a chip.

    Atabaki, Amir H; Moazeni, Sajjad; Pavanello, Fabio; Gevorgyan, Hayk; Notaros, Jelena; Alloatti, Luca; Wade, Mark T; Sun, Chen; Kruger, Seth A; Meng, Huaiyu; Al Qubaisi, Kenaish; Wang, Imbert; Zhang, Bohan; Khilo, Anatol; Baiocco, Christopher V; Popović, Miloš A; Stojanović, Vladimir M; Ram, Rajeev J

    2018-04-01

    Electronic and photonic technologies have transformed our lives-from computing and mobile devices, to information technology and the internet. Our future demands in these fields require innovation in each technology separately, but also depend on our ability to harness their complementary physics through integrated solutions 1,2 . This goal is hindered by the fact that most silicon nanotechnologies-which enable our processors, computer memory, communications chips and image sensors-rely on bulk silicon substrates, a cost-effective solution with an abundant supply chain, but with substantial limitations for the integration of photonic functions. Here we introduce photonics into bulk silicon complementary metal-oxide-semiconductor (CMOS) chips using a layer of polycrystalline silicon deposited on silicon oxide (glass) islands fabricated alongside transistors. We use this single deposited layer to realize optical waveguides and resonators, high-speed optical modulators and sensitive avalanche photodetectors. We integrated this photonic platform with a 65-nanometre-transistor bulk CMOS process technology inside a 300-millimetre-diameter-wafer microelectronics foundry. We then implemented integrated high-speed optical transceivers in this platform that operate at ten gigabits per second, composed of millions of transistors, and arrayed on a single optical bus for wavelength division multiplexing, to address the demand for high-bandwidth optical interconnects in data centres and high-performance computing 3,4 . By decoupling the formation of photonic devices from that of transistors, this integration approach can achieve many of the goals of multi-chip solutions 5 , but with the performance, complexity and scalability of 'systems on a chip' 1,6-8 . As transistors smaller than ten nanometres across become commercially available 9 , and as new nanotechnologies emerge 10,11 , this approach could provide a way to integrate photonics with state-of-the-art nanoelectronics.

  15. Miniaturized flow cytometer with 3D hydrodynamic particle focusing and integrated optical elements applying silicon photodiodes

    Rosenauer, M.; Buchegger, W.; Finoulst, I.; Verhaert, P.D.E.M.; Vellekoop, M.

    2010-01-01

    In this study, the design, realization and measurement results of a novel optofluidic system capable of performing absorbance-based flow cytometric analysis is presented. This miniaturized laboratory platform, fabricated using SU-8 on a silicon substrate, comprises integrated polymer-based

  16. Realization of an integrated VDF/TrFE copolymer-on-silicon pyroelectric sensor

    Setiadi, D.; Setiadi, D.; Regtien, Paulus P.L.; Sarro, P.M.

    1995-01-01

    An integrated pyroelectric sensor based on a vinylidene fluoride trifluoroethylene (VDF/TrFE) copolymer is presented. A silicon substrate that contains FET readout electronics is coated with the VDF/TrFE copolymer film using a spin-coating technique. On-chip poling of the copolymer has been applied

  17. Recent results from the development of silicon detectors with integrated electronics

    Dalla Betta, G.-F. E-mail: dallabe@dit.unitn.it; Boscardin, M.; Batignani, G.; Bettarini, S.; Bisogni, M.G.; Bosisio, L.; Carpinelli, M.; Ciacchi, M.; Dittongo, S.; Forti, F.; Giorgi, M.; Gregori, P.; Manghisoni, M.; Novelli, M.; Piemonte, C.; Rachevskaia, I.; Rama, M.; Ratti, L.; Re, V.; Ronchin, S.; Sandrelli, F.; Simi, G.; Speziali, V.; Rosso, V.; Traversi, G.; Zorzi, N

    2004-02-01

    In the past few years we have developed a technological process allowing for the fabrication of radiation detectors with integrated electronics on high-resistivity silicon substrates. We report on some recent results relevant to the process optimisation and to device/circuit characterization.

  18. Recent results from the development of silicon detectors with integrated electronics

    Dalla Betta, G.-F.; Boscardin, M.; Batignani, G.; Bettarini, S.; Bisogni, M.G.; Bosisio, L.; Carpinelli, M.; Ciacchi, M.; Dittongo, S.; Forti, F.; Giorgi, M.; Gregori, P.; Manghisoni, M.; Novelli, M.; Piemonte, C.; Rachevskaia, I.; Rama, M.; Ratti, L.; Re, V.; Ronchin, S.; Sandrelli, F.; Simi, G.; Speziali, V.; Rosso, V.; Traversi, G.; Zorzi, N.

    2004-01-01

    In the past few years we have developed a technological process allowing for the fabrication of radiation detectors with integrated electronics on high-resistivity silicon substrates. We report on some recent results relevant to the process optimisation and to device/circuit characterization

  19. Towards a fully integrated indium-phosphide membrane on silicon photonics platform

    van Engelen, J.P.; Pogoretskiy, V.; Smit, M.K.; van der Tol, J.J.G.M.; Jiao, Y.

    2017-01-01

    Recently a uni-traveling-carrier photodetector with high speed (> 67GHz) and a high-gain optical amplifier (110/cm at 4 kA/cm2) have been demonstrated using the InP membrane-on-Silicon (IMOS) integration technology. Passives in IMOS have shown features comparable to SOI platforms due to the tight

  20. Hybrid integrated single-wavelength laser with silicon micro-ring reflector

    Ren, Min; Pu, Jing; Krishnamurthy, Vivek; Xu, Zhengji; Lee, Chee-Wei; Li, Dongdong; Gonzaga, Leonard; Toh, Yeow T.; Tjiptoharsono, Febi; Wang, Qian

    2018-02-01

    A hybrid integrated single-wavelength laser with silicon micro-ring reflector is demonstrated theoretically and experimentally. It consists of a heterogeneously integrated III-V section for optical gain, an adiabatic taper for light coupling, and a silicon micro-ring reflector for both wavelength selection and light reflection. Heterogeneous integration processes for multiple III-V chips bonded to an 8-inch Si wafer have been developed, which is promising for massive production of hybrid lasers on Si. The III-V layer is introduced on top of a 220-nm thick SOI layer through low-temperature wafer-boning technology. The optical coupling efficiency of >85% between III-V and Si waveguide has been achieved. The silicon micro-ring reflector, as the key element of the hybrid laser, is studied, with its maximized reflectivity of 85.6% demonstrated experimentally. The compact single-wavelength laser enables fully monolithic integration on silicon wafer for optical communication and optical sensing application.

  1. Integrating carbon nanotubes into silicon by means of vertical carbon nanotube field-effect transistors

    Li, Jingqi; Wang, Qingxiao; Yue, Weisheng; Guo, Zaibing; LI, LIANG; Zhao, Chao; Wang, Xianbin; Abutaha, Anas I.; Alshareef, Husam N.; Zhang, Yafei; Zhang, Xixiang

    2014-01-01

    Single-walled carbon nanotubes have been integrated into silicon for use in vertical carbon nanotube field-effect transistors (CNTFETs). A unique feature of these devices is that a silicon substrate and a metal contact are used as the source and drain for the vertical transistors, respectively. These CNTFETs show very different characteristics from those fabricated with two metal contacts. Surprisingly, the transfer characteristics of the vertical CNTFETs can be either ambipolar or unipolar (p-type or n-type) depending on the sign of the drain voltage. Furthermore, the p-type/n-type character of the devices is defined by the doping type of the silicon substrate used in the fabrication process. A semiclassical model is used to simulate the performance of these CNTFETs by taking the conductance change of the Si contact under the gate voltage into consideration. The calculation results are consistent with the experimental observations. This journal is © the Partner Organisations 2014.

  2. Three-Dimensional Integration of Black Phosphorus Photodetector with Silicon Photonics and Nanoplasmonics.

    Chen, Che; Youngblood, Nathan; Peng, Ruoming; Yoo, Daehan; Mohr, Daniel A; Johnson, Timothy W; Oh, Sang-Hyun; Li, Mo

    2017-02-08

    We demonstrate the integration of a black phosphorus photodetector in a hybrid, three-dimensional architecture of silicon photonics and metallic nanoplasmonics structures. This integration approach combines the advantages of the low propagation loss of silicon waveguides, high-field confinement of a plasmonic nanogap, and the narrow bandgap of black phosphorus to achieve high responsivity for detection of telecom-band, near-infrared light. Benefiting from an ultrashort channel (∼60 nm) and near-field enhancement enabled by the nanogap structure, the photodetector shows an intrinsic responsivity as high as 10 A/W afforded by internal gain mechanisms, and a 3 dB roll-off frequency of 150 MHz. This device demonstrates a promising approach for on-chip integration of three distinctive photonic systems, which, as a generic platform, may lead to future nanophotonic applications for biosensing, nonlinear optics, and optical signal processing.

  3. A CMOS microdisplay with integrated controller utilizing improved silicon hot carrier luminescent light sources

    Venter, Petrus J.; Alberts, Antonie C.; du Plessis, Monuko; Joubert, Trudi-Heleen; Goosen, Marius E.; Janse van Rensburg, Christo; Rademeyer, Pieter; Fauré, Nicolaas M.

    2013-03-01

    Microdisplay technology, the miniaturization and integration of small displays for various applications, is predominantly based on OLED and LCoS technologies. Silicon light emission from hot carrier electroluminescence has been shown to emit light visibly perceptible without the aid of any additional intensification, although the electrical to optical conversion efficiency is not as high as the technologies mentioned above. For some applications, this drawback may be traded off against the major cost advantage and superior integration opportunities offered by CMOS microdisplays using integrated silicon light sources. This work introduces an improved version of our previously published microdisplay by making use of new efficiency enhanced CMOS light emitting structures and an increased display resolution. Silicon hot carrier luminescence is often created when reverse biased pn-junctions enter the breakdown regime where impact ionization results in carrier transport across the junction. Avalanche breakdown is typically unwanted in modern CMOS processes. Design rules and process design are generally tailored to prevent breakdown, while the voltages associated with breakdown are too high to directly interact with the rest of the CMOS standard library. This work shows that it is possible to lower the operating voltage of CMOS light sources without compromising the optical output power. This results in more efficient light sources with improved interaction with other standard library components. This work proves that it is possible to create a reasonably high resolution microdisplay while integrating the active matrix controller and drivers on the same integrated circuit die without additional modifications, in a standard CMOS process.

  4. Encapsulated Ball Bearings for Rotary Micro Machines

    2007-01-01

    occurrence as well as the overall tribological properties of the bearing mechanism. Firstly, the number of stainless steel balls influences not only the load...stacks.iop.org/JMM/17/S224 Abstract We report on the first encapsulated rotary ball bearing mechanism using silicon microfabrication and stainless steel balls...The method of capturing stainless steel balls within a silicon race to support a silicon rotor both axially and radially is developed for rotary micro

  5. Mode converter based on an inverse taper for multimode silicon nanophotonic integrated circuits.

    Dai, Daoxin; Mao, Mao

    2015-11-02

    An inverse taper on silicon is proposed and designed to realize an efficient mode converter available for the connection between multimode silicon nanophotonic integrated circuits and few-mode fibers. The present mode converter has a silicon-on-insulator inverse taper buried in a 3 × 3μm(2) SiN strip waveguide to deal with not only for the fundamental mode but also for the higher-order modes. The designed inverse taper enables the conversion between the six modes (i.e., TE(11), TE(21), TE(31), TE(41), TM(11), TM(12)) in a 1.4 × 0.22μm(2) multimode SOI waveguide and the six modes (like the LP(01), LP(11a), LP(11b) modes in a few-mode fiber) in a 3 × 3μm(2) SiN strip waveguide. The conversion efficiency for any desired mode is higher than 95.6% while any undesired mode excitation ratio is lower than 0.5%. This is helpful to make multimode silicon nanophotonic integrated circuits (e.g., the on-chip mode (de)multiplexers developed well) available to work together with few-mode fibers in the future.

  6. POLYETHYLENE ENCAPSULATION

    Kalb, P.

    2001-01-01

    Polyethylene microencapsulation physically homogenizes and incorporates mixed waste particles within a molten polymer matrix, forming a solidified final waste form upon cooling. Each individual particle of waste is embedded within the polymer block and is surrounded by a durable, leach-resistant coating. The process has been successfully applied for the treatment of a broad range of mixed wastes, including evaporator concentrate salts, soil, sludges, incinerator ash, off-gas blowdown solutions, decontamination solutions, molten salt oxidation process residuals, ion exchange resins, granular activated carbon, shredded dry active waste, spill clean-up residuals, depleted uranium powders, and failed grout waste forms. For waste streams containing high concentrations of soluble toxic metal contaminants, additives can be used to further reduce leachability, thus improving waste loadings while meeting or exceeding regulatory disposal criteria. In this configuration, contaminants are both chemically stabilized and physically solidified, making the process a true stabilization/solidification (S/S) technology. Unlike conventional hydraulic cement grouts or thermosetting polymers, thermoplastic polymers such as polyethylene require no chemical. reaction for solidification. Thus, a stable, solid, final waste form product is assured on cooling. Variations in waste chemistry over time do not affect processing parameters and do not require reformulation of the recipe. Incorporation of waste particles within the polymer matrix serves as an aggregate and improves the mechanical strength and integrity of the waste form. The compressive strength of polyethylene microencapsulated waste forms varies based on the type and quantity of waste encapsulated, but is typically between 7 and 17.2 MPa (1000 and 2500 psi), well above the minimum strength of 0.4 MPa (160 psi) recommended by the U.S. Nuclear Regulatory Commission (NRC) for low-level radioactive waste forms in support of 10 CFR 61

  7. VCSEL Scaling, Laser Integration on Silicon, and Bit Energy

    2017-03-01

    especially the laser. Highly compact directly modulated lasers ( DMLs ) have been researched to meet this goal. The most favored technology will likely be...question of which achieves lower bit energy, a DML or a continuous-wave (CW) laser coupled to an integrated modulator. Transceiver suppliers are also...development that can utilize high efficiency DMLs that reach very high modulation speed. Oxide-VCSELs [1] do not yet take full advantage of the

  8. Through-silicon-via crosstalk model and optimization design for three-dimensional integrated circuits

    Qian Li-Bo; Xia Yin-Shui; Zhu Zhang-Ming; Ding Rui-Xue; Yang Yin-Tang

    2014-01-01

    Through-silicon-via (TSV) to TSV crosstalk noise is one of the key factors affecting the signal integrity of three-dimensional integrated circuits (3D ICs). Based on the frequency dependent equivalent electrical parameters for the TSV channel, an analytical crosstalk noise model is established to capture the TSV induced crosstalk noise. The impact of various design parameters including insulation dielectric, via pitch, via height, silicon conductivity, and terminal impedance on the crosstalk noise is analyzed with the proposed model. Two approaches are proposed to alleviate the TSV noise, namely, driver sizing and via shielding, and the SPICE results show 241 mV and 379 mV reductions in the peak noise voltage, respectively

  9. EQUIPMENT FOR NONDESTRUCTIVE TESTING OF SILICON WAFERS SUBMICRON TOPOLOGY DURING THE FABRICATION OF INTEGRATED CIRCUITS

    S. A. Chizhik

    2013-01-01

    Full Text Available The advantages of using an atomic force microscopy in manufacturing of submicron integrated circuits are described. The possibilities of characterizing the surface morphology and the etching profile for silicon substrate and bus lines, estimation of the periodicity and size of bus lines, geometrical stability for elementary bus line are shown. Methods of optical and atomic force microcopies are combined in one diagnostic unit. Scanning  probe  microscope  (SPM  200  is  designed  and  produced.  Complex  SPM  200  realizes  nondestructive control of microelectronics elements made on silicon wafers up to 200 mm in diameter and it is introduced by JSC «Integral» for the purpose of operational control, metrology and acceptance of the final product.

  10. Technology for the compatible integration of silicon detectors with readout electronics

    Zimmer, G.

    1984-01-01

    Compatible integration of detectors and readout electronics on the same silicon substrate is of growing interest. As the methods of microelectronics technology have already been adapted for detector fabrication, a common technology basis for detectors and readout electronics is available. CMOS technology exhibits most attractive features for the compatible realization of readout electronics when advanced LSI processing steps are combined with detector requirements. The essential requirements for compatible integration are the availability of high resistivity (100)-oriented single crystalline silicon substrate, the formation of suitably doped areas for MOS circuits and the isolation of the low voltage circuit from the detector operated at much higher supply voltage. Junction isolation as a first approach based on present production technology and dielectric isolation based on an advanced SOI-LSI technology are discussed as the most promising solutions for present and future applications, respectively. (orig.)

  11. A low cost and hybrid technology for integrating silicon sensors or actuators in polymer microfluidic systems

    Charlot, Samuel; Gué, Anne-Marie; Tasselli, Josiane; Marty, Antoine; Abgrall, Patrick; Estève, Daniel

    2008-01-01

    This paper describes a new technology permitting a hybrid integration of silicon chips in polymer (PDMS and SU8) microfluidic structures. This two-step technology starts with transferring the silicon device onto a rigid substrate (typically PCB) and planarizing it, and then it proceeds with stacking of the polymer-made fluidic network onto the device. The technology is low cost, based on screen printing and lamination, can be applied to treat large surface areas, and is compatible with standard photolithography and vacuum based approaches. We show, as an example, the integration of a thermal sensor inside channels made of PDMS or SU8. The developed structures had no fluid leaks at the Si/polymer interfaces and the electrical circuit was perfectly tightproof. (note)

  12. Studies and integration of Silicon-based light emitting systems

    González Fernández, Alfredo A.

    2014-01-01

    [spa] Este proyecto aborda el estudio de dispositivos y materiales luminiscentes basados en silicio para su uso en la fabricación de un sistema óptico que integre emisor de luz, guía de ondas, y sensor en un solo chip obtenido mediante el uso de técnicas y materiales estándar para la fabricación CMOS. Las características atómicas y estructurales de los materiales son analizados y relacionados con su respuesta luminiscente. Considerando los resultados de la caracterización del material a...

  13. Integrated investigation approach for determining mechanical properties of poly-silicon membranes

    Brueckner, J.; Dehe, A.; Auerswald, E.; Dudek, R.; Michel, B.; Rzepka, S.

    2014-01-01

    A methodology is presented for determining mechanical properties of free-standing thin films such as poly-silicon membranes. The integrated investigation approach comprises test structure development, mechanical testing, and numerical simulation. All membrane test structures developed and manufactured consist of the same material but have different stiffness due to variations in the geometric design. The mechanical tests apply microscopic loads utilizing a nanoindentation tool. Young's modulu...

  14. High-contrast gratings for long-wavelength laser integration on silicon

    Sciancalepore, Corrado; Descos, Antoine; Bordel, Damien; Duprez, Hélène; Letartre, Xavier; Menezo, Sylvie; Ben Bakir, Badhise

    2014-02-01

    Silicon photonics is increasingly considered as the most promising way-out to the relentless growth of data traffic in today's telecommunications infrastructures, driving an increase in transmission rates and computing capabilities. This is in fact challenging the intrinsic limit of copper-based, short-reach interconnects and microelectronic circuits in data centers and server architectures to offer enough modulation bandwidth at reasonable power dissipation. In the context of the heterogeneous integration of III-V direct-bandgap materials on silicon, optics with high-contrast metastructures enables the efficient implementation of optical functions such as laser feedback, input/output (I/O) to active/passive components, and optical filtering, while heterogeneous integration of III-V layers provides sufficient optical gain, resulting in silicon-integrated laser sources. The latest ensure reduced packaging costs and reduced footprint for the optical transceivers, a key point for the short reach communications. The invited talk will introduce the audience to the latest breakthroughs concerning the use of high-contrast gratings (HCGs) for the integration of III-V-on-Si verticalcavity surface-emitting lasers (VCSELs) as well as Fabry-Perot edge-emitters (EELs) in the main telecom band around 1.55 μm. The strong near-field mode overlap within HCG mirrors can be exploited to implement unique optical functions such as dense wavelength division multiplexing (DWDM): a 16-λ100-GHz-spaced channels VCSEL array is demonstrated. On the other hand, high fabrication yields obtained via molecular wafer bonding of III-V alloys on silicon-on-insulator (SOI) conjugate excellent device performances with cost-effective high-throughput production, supporting industrial needs for a rapid research-to-market transfer.

  15. An improved PIN photodetector with integrated JFET on high-resistivity silicon

    Dalla Betta, Gian-Franco; Piemonte, Claudio; Boscardin, Maurizio; Gregori, Paolo; Zorzi, Nicola; Fazzi, Alberto; Pignatel, Giorgio U.

    2006-01-01

    We report on a PIN photodetector integrated with a Junction Field Effect Transistor (JFET) on a high-resistivity silicon substrate. Owing to a modified fabrication technology, the electrical and noise characteristics of the JFET transistor have been enhanced with respect to the previous versions of the device, allowing the performance to be significantly improved. In this paper, the main design and technological aspects relevant to the proposed structure are addressed and experimental results from the electrical characterization are discussed

  16. Integrated Circuit Interconnect Lines on Lossy Silicon Substrate with Finite Element Method

    Sarhan M. Musa,; Matthew N. O. Sadiku

    2014-01-01

    The silicon substrate has a significant effect on the inductance parameter of a lossy interconnect line on integrated circuit. It is essential to take this into account in determining the transmission line electrical parameters. In this paper, a new quasi-TEM capacitance and inductance analysis of multiconductor multilayer interconnects is successfully demonstrated using finite element method (FEM). We specifically illustrate the electrostatic modeling of single and coupled in...

  17. Single- and double- lumen silicone breast implant integrity: prospective evaluation of MR and US criteria.

    Berg, W A; Caskey, C I; Hamper, U M; Kuhlman, J E; Anderson, N D; Chang, B W; Sheth, S; Zerhouni, E A

    1995-10-01

    To evaluate the accuracy of magnetic resonance (MR) and ultrasound (US) criteria for breast implant integrity. One hundred twenty-two single-lumen silicone breast implants and 22 bilumen implants were evaluated with surface coil MR imaging and US and surgically removed. MR criteria for implant failure were a collapsed implant shell ("linguine sign"), foci of silicone outside the shell ("noose sign"), and extracapsular gel, US criteria were collapsed shell, low-level echoes within the gel, and "snowstorm" echoes of extracapsular silicone. Among single-lumen implants, MR imaging depicted 39 of 40 ruptures, 14 of 28 with minimal leakage; 49 of 54 intact implants were correctly interpreted. US depicted 26 of 40 ruptured implants, four of 28 with minimal leakage, and 30 of 54 intact implants. Among bilumen implants, MR imaging depicted four of five implants with rupture of both lumina and nine of 10 as intact; US depicted one rupture and helped identify two of 10 as intact. Mammography accurately depicted the status of 29 of 30 bilumen implants with MR imaging correlation. MR imaging depicts implant integrity more accurately than US; neither method reliably depicts minimal leakage with shell collapse. Mammography is useful in screening bilumen implant integrity.

  18. Software-defined networking control plane for seamless integration of multiple silicon photonic switches in Datacom networks.

    Shen, Yiwen; Hattink, Maarten H N; Samadi, Payman; Cheng, Qixiang; Hu, Ziyiz; Gazman, Alexander; Bergman, Keren

    2018-04-16

    Silicon photonics based switches offer an effective option for the delivery of dynamic bandwidth for future large-scale Datacom systems while maintaining scalable energy efficiency. The integration of a silicon photonics-based optical switching fabric within electronic Datacom architectures requires novel network topologies and arbitration strategies to effectively manage the active elements in the network. We present a scalable software-defined networking control plane to integrate silicon photonic based switches with conventional Ethernet or InfiniBand networks. Our software-defined control plane manages both electronic packet switches and multiple silicon photonic switches for simultaneous packet and circuit switching. We built an experimental Dragonfly network testbed with 16 electronic packet switches and 2 silicon photonic switches to evaluate our control plane. Observed latencies occupied by each step of the switching procedure demonstrate a total of 344 µs control plane latency for data-center and high performance computing platforms.

  19. A bipolar analog front-end integrated circuit for the SDC silicon tracker

    Kipnis, I.; Spieler, H.; Collins, T.

    1993-11-01

    A low-noise, low-power, high-bandwidth, radiation hard, silicon bipolar-transistor full-custom integrated circuit (IC) containing 64 channels of analog signal processing has been developed for the SDC silicon tracker. The IC was designed and tested at LBL and was fabricated using AT ampersand T's CBIC-U2, 4 GHz f T complementary bipolar technology. Each channel contains the following functions: low-noise preamplification, pulse shaping and threshold discrimination. This is the first iteration of the production analog IC for the SDC silicon tracker. The IC is laid out to directly match the 50 μm pitch double-sided silicon strip detector. The chip measures 6.8 mm x 3.1 mm and contains 3,600 transistors. Three stages of amplification provide 180 mV/fC of gain with a 35 nsec peaking time at the comparator input. For a 14 pF detector capacitance, the equivalent noise charge is 1300 el. rms at a power consumption of 1 mW/channel from a single 3.5 V supply. With the discriminator threshold set to 4 times the noise level, a 16 nsec time-walk for 1.25 to 10fC signals is achieved using a time-walk compensation network. Irradiation tests at TRIUMF to a Φ=10 14 protons/cm 2 have been performed on the IC, demonstrating the radiation hardness of the complementary bipolar process

  20. Single-crystal silicon trench etching for fabrication of highly integrated circuits

    Engelhardt, Manfred

    1991-03-01

    The development of single crystal silicon trench etching for fabrication of memory cells in 4 16 and 64Mbit DRAMs is reviewed in this paper. A variety of both etch tools and process gases used for the process development is discussed since both equipment and etch chemistry had to be improved and changed respectively to meet the increasing requirements for high fidelity pattern transfer with increasing degree of integration. In additon to DRAM cell structures etch results for deep trench isolation in advanced bipolar ICs and ASICs are presented for these applications grooves were etched into silicon through a highly doped buried layer and at the borderline of adjacent p- and n-well areas respectively. Shallow trench etching of large and small exposed areas with identical etch rates is presented as an approach to replace standard LOCOS isolation by an advanced isolation technique. The etch profiles were investigated with SEM TEM and AES to get information on contathination and damage levels and on the mechanism leading to anisotropy in the dry etch process. Thermal wave measurements were performed on processed single crystal silicon substrates for a fast evaluation of the process with respect to plasma-induced substrate degradation. This useful technique allows an optimization ofthe etch process regarding high electrical performance of the fully processed memory chip. The benefits of the use of magnetic fields for the development of innovative single crystal silicon dry

  1. Gallium Phosphide Integrated with Silicon Heterojunction Solar Cells

    Zhang, Chaomin

    It has been a long-standing goal to epitaxially integrate III-V alloys with Si substrates which can enable low-cost microelectronic and optoelectronic systems. Among the III-V alloys, gallium phosphide (GaP) is a strong candidate, especially for solar cells applications. Gallium phosphide with small lattice mismatch ( 0.4%) to Si enables coherent/pseudomorphic epitaxial growth with little crystalline defect creation. The band offset between Si and GaP suggests that GaP can function as an electron-selective contact, and it has been theoretically shown that GaP/Si integrated solar cells have the potential to overcome the limitations of common a-Si based heterojunction (SHJ) solar cells. Despite the promising potential of GaP/Si heterojunction solar cells, there are two main obstacles to realize high performance photovoltaic devices from this structure. First, the growth of the polar material (GaP) on the non-polar material (Si) is a challenge in how to suppress the formation of structural defects, such as anti-phase domains (APD). Further, it is widely observed that the minority-carrier lifetime of the Si substrates is significantly decreased during epitaxially growth of GaP on Si. In this dissertation, two different GaP growth methods were compared and analyzed, including migration-enhanced epitaxy (MEE) and traditional molecular beam epitaxy (MBE). High quality GaP can be realized on precisely oriented (001) Si substrates by MBE growth, and the investigation of structural defect creation in the GaP/Si epitaxial structures was conducted using high resolution X-ray diffraction (HRXRD) and high resolution transmission electron microscopy (HRTEM). The mechanisms responsible for lifetime degradation were further investigated, and it was found that external fast diffusors are the origin for the degradation. Two practical approaches including the use of both a SiNx diffusion barrier layer and P-diffused layers, to suppress the Si minority-carrier lifetime degradation

  2. Development of test models to quantify encapsulated bioburden in spacecraft polymer materials by cultivation-dependent and molecular methods

    Bauermeister, Anja; Moissl-Eichinger, Christine; Mahnert, Alexander; Probst, Alexander; Flier, Niwin; Auerbach, Anna; Weber, Christina; Haberer, Klaus; Boeker, Alexander

    Bioburden encapsulated in spacecraft polymers (such as adhesives and coatings) poses a potential risk to scientific exploration of other celestial bodies, but it is not easily detectable. In this study, we developed novel testing strategies to estimate the quantity of intrinsic encapsulated bioburden in polymers used frequently on spaceflight hardware. In particular Scotch-Weld (TM) 2216 B/A (Epoxy adhesive); MAP SG121FD (Silicone coating), Solithane (®) 113 (Urethane resin); ESP 495 (Silicone adhesive); and Dow Corning (®) 93-500 (Silicone encapsulant) were investigated. As extraction of bioburden from polymerized (solid) materials did not prove feasible, a method was devised to extract contaminants from uncured polymer precursors by dilution in organic solvents. Cultivation-dependent analyses showed less than 0.1-2.5 colony forming units (cfu) per cm³ polymer, whereas quantitative PCR with extracted DNA indicated considerably higher values, despite low DNA extraction efficiency. Results obtained by this method reflected the most conservative proxy for encapsulated bioburden. To observe the effect of physical and chemical stress occurring during polymerization on the viability of encapsulated contaminants, Bacillus safensis spores were embedded close to the surface in cured polymer, which facilitated access for different analytical techniques. Staining by AlexaFluor succinimidyl ester 488 (AF488), propidium monoazide (PMA), CTC (5-cyano-2,3-diotolyl tetrazolium chloride) and subsequent confocal laser scanning microscopy (CLSM) demonstrated that embedded spores retained integrity, germination and cultivation ability even after polymerization of the adhesive Scotch-Weld™ 2216 B/A.

  3. From a single encapsulated detector to the spectrometer for INTEGRAL satellite: predicting the peak-to-total ratio at high gamma-energies

    Kshetri, Ritesh

    2012-01-01

    In two recent papers (R. Kshetri, JINST 2012 7 P04008; ibid., P07006), a probabilistic formalism was introduced to predict the response of encapsulated type composite germanium detectors like the SPI (spectrometer for INTEGRAL satellite). Predictions for the peak-to-total and peak-to-background ratios are given at 1.3 MeV for the addback mode of operation. The application of the formalism to clover germanium detector is discussed in two separate papers (R. Kshetri, JINST 2012 7 P07008; ibid.,...

  4. Silicon-Based Technology for Integrated Waveguides and mm-Wave Systems

    Jovanovic, Vladimir; Gentile, Gennaro; Dekker, Ronald

    2015-01-01

    IC processing is used to develop technology for silicon-filled millimeter-wave-integrated waveguides. The front-end process defines critical waveguide sections and enables integration of dedicated components, such as RF capacitors and resistors. Wafer gluing is used to strengthen the mechanical...... support and deep reactive-ion etching forms the waveguide bulk with smooth and nearly vertical sidewalls. Aluminum metallization covers the etched sidewalls, fully enclosing the waveguides in metal from all sides. Waveguides are fabricated with a rectangular cross section of 560 μm x 280 μm. The measured...

  5. Large-area compatible fabrication and encapsulation of inkjet-printed humidity sensors on flexible foils with integrated thermal compensation

    Molina-Lopez, F; Quintero, A Vásquez; Mattana, G; Briand, D; De Rooij, N F

    2013-01-01

    This work presents the simultaneous fabrication of ambient relative humidity (RH) and temperature sensors arrays, inkjet-printed on flexible substrates and subsequently encapsulated at foil level. These sensors are based on planar interdigitated capacitors with an inkjet-printed sensing layer and meander-shaped resistors. Their combination allows the compensation of the RH signals variations at different temperatures. The whole fabrication of the system is carried out at foil level and involves the utilization of additive methods such as inkjet-printing and electrodeposition. Electrodeposition of the printed lines resulted in an improvement of the thermoresistors. The sensors have been characterized and their performances analyzed. The encapsulation layer does not modify the performances of the sensors in terms of sensitivity or response time. This work demonstrates the potential of inkjet-printing in the large-area fabrication of light-weight and cost-efficient gas sensors on flexible substrates. (paper)

  6. Integrated Amorphous Silicon p-i-n Temperature Sensor for CMOS Photonics

    Sandro Rao

    2016-01-01

    Full Text Available Hydrogenated amorphous silicon (a-Si:H shows interesting optoelectronic and technological properties that make it suitable for the fabrication of passive and active micro-photonic devices, compatible moreover with standard microelectronic devices on a microchip. A temperature sensor based on a hydrogenated amorphous silicon p-i-n diode integrated in an optical waveguide for silicon photonics applications is presented here. The linear dependence of the voltage drop across the forward-biased diode on temperature, in a range from 30 °C up to 170 °C, has been used for thermal sensing. A high sensitivity of 11.9 mV/°C in the bias current range of 34–40 nA has been measured. The proposed device is particularly suitable for the continuous temperature monitoring of CMOS-compatible photonic integrated circuits, where the behavior of the on-chip active and passive devices are strongly dependent on their operating temperature.

  7. High-Responsivity Graphene-Boron Nitride Photodetector and Autocorrelator in a Silicon Photonic Integrated Circuit.

    Shiue, Ren-Jye; Gao, Yuanda; Wang, Yifei; Peng, Cheng; Robertson, Alexander D; Efetov, Dmitri K; Assefa, Solomon; Koppens, Frank H L; Hone, James; Englund, Dirk

    2015-11-11

    Graphene and other two-dimensional (2D) materials have emerged as promising materials for broadband and ultrafast photodetection and optical modulation. These optoelectronic capabilities can augment complementary metal-oxide-semiconductor (CMOS) devices for high-speed and low-power optical interconnects. Here, we demonstrate an on-chip ultrafast photodetector based on a two-dimensional heterostructure consisting of high-quality graphene encapsulated in hexagonal boron nitride. Coupled to the optical mode of a silicon waveguide, this 2D heterostructure-based photodetector exhibits a maximum responsivity of 0.36 A/W and high-speed operation with a 3 dB cutoff at 42 GHz. From photocurrent measurements as a function of the top-gate and source-drain voltages, we conclude that the photoresponse is consistent with hot electron mediated effects. At moderate peak powers above 50 mW, we observe a saturating photocurrent consistent with the mechanisms of electron-phonon supercollision cooling. This nonlinear photoresponse enables optical on-chip autocorrelation measurements with picosecond-scale timing resolution and exceptionally low peak powers.

  8. Effects of plasma-deposited silicon nitride passivation on the radiation hardness of CMOS integrated circuits

    Clement, J.J.

    1980-01-01

    The use of plasma-deposited silicon nitride as a final passivation over metal-gate CMOS integrated circuits degrades the radiation hardness of these devices. The hardness degradation is manifested by increased radiation-induced threshold voltage shifts caused principally by the charging of new interface states and, to a lesser extent, by the trapping of holes created upon exposure to ionizing radiation. The threshold voltage shifts are a strong function of the deposition temperature, and show very little dependence on thickness for films deposited at 300 0 C. There is some correlation between the threshold voltage shifts and the hydrogen content of the PECVD silicon nitride films used as the final passivation layer as a function of deposition temperature. The mechanism by which the hydrogen contained in these films may react with the Si/SiO 2 interface is not clear at this point

  9. Micro direct methanol fuel cell with perforated silicon-plate integrated ionomer membrane

    Larsen, Jackie Vincent; Dalslet, Bjarke Thomas; Johansson, Anne-Charlotte Elisabeth Birgitta

    2014-01-01

    This article describes the fabrication and characterization of a silicon based micro direct methanol fuel cell using a Nafion ionomer membrane integrated into a perforated silicon plate. The focus of this work is to provide a platform for micro- and nanostructuring of a combined current collector...... at a perforation ratio of 40.3%. The presented fuel cells also show a high volumetric peak power density of 2 mW cm−3 in light of the small system volume of 480 μL, while being fully self contained and passively feed....... and catalytic electrode. AC impedance spectroscopy is utilized alongside IV characterization to determine the influence of the plate perforation geometries on the cell performance. It is found that higher ratios of perforation increases peak power density, with the highest achieved being 2.5 mW cm−2...

  10. Materials and fabrication sequences for water soluble silicon integrated circuits at the 90 nm node

    Yin, Lan; Harburg, Daniel V.; Rogers, John A.; Bozler, Carl; Omenetto, Fiorenzo

    2015-01-01

    Tungsten interconnects in silicon integrated circuits built at the 90 nm node with releasable configurations on silicon on insulator wafers serve as the basis for advanced forms of water-soluble electronics. These physically transient systems have potential uses in applications that range from temporary biomedical implants to zero-waste environmental sensors. Systematic experimental studies and modeling efforts reveal essential aspects of electrical performance in field effect transistors and complementary ring oscillators with as many as 499 stages. Accelerated tests reveal timescales for dissolution of the various constituent materials, including tungsten, silicon, and silicon dioxide. The results demonstrate that silicon complementary metal-oxide-semiconductor circuits formed with tungsten interconnects in foundry-compatible fabrication processes can serve as a path to high performance, mass-produced transient electronic systems

  11. Materials and fabrication sequences for water soluble silicon integrated circuits at the 90 nm node

    Yin, Lan; Harburg, Daniel V.; Rogers, John A., E-mail: jrogers@illinois.edu [Department of Materials Science and Engineering, Beckman Institute for Advanced Science and Technology, and Frederick Seitz Materials Research Laboratory, University of Illinois at Urbana-Champaign, 104 S Goodwin Ave., Urbana, Illinois 61801 (United States); Bozler, Carl [Lincoln Laboratory, Massachusetts Institute of Technology, 244 Wood Street, Lexington, Massachusetts 02420 (United States); Omenetto, Fiorenzo [Department of Biomedical Engineering, Department of Physics, Tufts University, 4 Colby St., Medford, Massachusetts 02155 (United States)

    2015-01-05

    Tungsten interconnects in silicon integrated circuits built at the 90 nm node with releasable configurations on silicon on insulator wafers serve as the basis for advanced forms of water-soluble electronics. These physically transient systems have potential uses in applications that range from temporary biomedical implants to zero-waste environmental sensors. Systematic experimental studies and modeling efforts reveal essential aspects of electrical performance in field effect transistors and complementary ring oscillators with as many as 499 stages. Accelerated tests reveal timescales for dissolution of the various constituent materials, including tungsten, silicon, and silicon dioxide. The results demonstrate that silicon complementary metal-oxide-semiconductor circuits formed with tungsten interconnects in foundry-compatible fabrication processes can serve as a path to high performance, mass-produced transient electronic systems.

  12. Gigascale Silicon Photonic Transmitters Integrating HBT-based Carrier-injection Electroabsorption Modulator Structures

    Fu, Enjin

    Demand for more bandwidth is rapidly increasing, which is driven by data intensive applications such as high-definition (HD) video streaming, cloud storage, and terascale computing applications. Next-generation high-performance computing systems require power efficient chip-to-chip and intra-chip interconnect yielding densities on the order of 1Tbps/cm2. The performance requirements of such system are the driving force behind the development of silicon integrated optical interconnect, providing a cost-effective solution for fully integrated optical interconnect systems on a single substrate. Compared to conventional electrical interconnect, optical interconnects have several advantages, including frequency independent insertion loss resulting in ultra wide bandwidth and link latency reduction. For high-speed optical transmitter modules, the optical modulator is a key component of the optical I/O channel. This thesis presents a silicon integrated optical transmitter module design based on a novel silicon HBT-based carrier injection electroabsorption modulator (EAM), which has the merits of wide optical bandwidth, high speed, low power, low drive voltage, small footprint, and high modulation efficiency. The structure, mechanism, and fabrication of the modulator structure will be discussed which is followed by the electrical modeling of the post-processed modulator device. The design and realization of a 10Gbps monolithic optical transmitter module integrating the driver circuit architecture and the HBT-based EAM device in a 130nm BiCMOS process is discussed. For high power efficiency, a 6Gbps ultra-low power driver IC implemented in a 130nm BiCMOS process is presented. The driver IC incorporates an integrated 27-1 pseudo-random bit sequence (PRBS) generator for reliable high-speed testing, and a driver circuit featuring digitally-tuned pre-emphasis signal strength. With outstanding drive capability, the driver module can be applied to a wide range of carrier

  13. Hybrid graphene/silicon integrated optical isolators with photonic spin–orbit interaction

    Ma, Jingwen; Sun, Xiankai; Xi, Xiang; Yu, Zejie

    2016-01-01

    Optical isolators are an important building block in photonic computation and communication. In traditional optics, isolators are realized with magneto-optical garnets. However, it remains challenging to incorporate such materials on an integrated platform because of the difficulty in material growth and bulky device footprint. Here, we propose an ultracompact integrated isolator by exploiting graphene's magneto-optical property on a silicon-on-insulator platform. The photonic nonreciprocity is achieved because the cyclotrons in graphene experiencing different optical spins exhibit different responses to counterpropagating light. Taking advantage of cavity resonance effects, we have numerically optimized a device design, which shows excellent isolation performance with the extinction ratio over 45 dB and the insertion loss around 12 dB at a wavelength near 1.55 μm. Featuring graphene's CMOS compatibility and substantially reduced device footprint, our proposal sheds light on monolithic integration of nonreciprocal photonic devices.

  14. Integration of the end cap TEC+ of the CMS silicon strip tracker

    Bremer, Richard

    2008-04-28

    CMS is the first large experiment of high-energy particle physics whose inner tracking system is exclusively instrumented with silicon detector modules. This tracker comprises 15 148 silicon strip modules enclosing the interaction point in 10-12 layers. The 1. Physikalisches Institut B of RWTH Aachen was deeply involved in the completion of the end caps of the tracking system. The institute played a leading role in the end cap design, produced virtually all support structures and several important electrical components, designed and built the laser alignment system of the tracker, performed system tests and finally integrated one of the two end caps in Aachen. This integration constitutes the central part of the present thesis work. The main focus was on the development of methods to recognise defects early in the integration process and to assert the detector's functionality. Characteristic quantities such as the detector noise or the optical gain of the readout chain were determined during integration as well as during a series of tests performed after transport of the end cap from Aachen to CERN. The procedures followed during the mechanical integration of the detector and during the commissioning of integrated sectors are explained, and the software packages developed for quality assurance are described. In addition, results of the detector readout are presented. During the integration phase, sub-structures of the end cap - named petals - were subjected to a reception test which has also been designed and operated as part of this thesis work. The test setup and software developed for the test are introduced and an account of the analysis of the recorded data is given. Before the end cap project entered the production phase, a final test beam experiment was performed in which the suitability of a system of two fully equipped petals for operation at the LHC was checked. The measured ratio of the signal induced in the silicon sensors by minimal ionising

  15. Integration of the end cap TEC+ of the CMS silicon strip tracker

    Bremer, Richard

    2008-01-01

    CMS is the first large experiment of high-energy particle physics whose inner tracking system is exclusively instrumented with silicon detector modules. This tracker comprises 15 148 silicon strip modules enclosing the interaction point in 10-12 layers. The 1. Physikalisches Institut B of RWTH Aachen was deeply involved in the completion of the end caps of the tracking system. The institute played a leading role in the end cap design, produced virtually all support structures and several important electrical components, designed and built the laser alignment system of the tracker, performed system tests and finally integrated one of the two end caps in Aachen. This integration constitutes the central part of the present thesis work. The main focus was on the development of methods to recognise defects early in the integration process and to assert the detector's functionality. Characteristic quantities such as the detector noise or the optical gain of the readout chain were determined during integration as well as during a series of tests performed after transport of the end cap from Aachen to CERN. The procedures followed during the mechanical integration of the detector and during the commissioning of integrated sectors are explained, and the software packages developed for quality assurance are described. In addition, results of the detector readout are presented. During the integration phase, sub-structures of the end cap - named petals - were subjected to a reception test which has also been designed and operated as part of this thesis work. The test setup and software developed for the test are introduced and an account of the analysis of the recorded data is given. Before the end cap project entered the production phase, a final test beam experiment was performed in which the suitability of a system of two fully equipped petals for operation at the LHC was checked. The measured ratio of the signal induced in the silicon sensors by minimal ionising particles

  16. Nanowire-integrated microporous silicon membrane for continuous fluid transport in micro cooling device

    So, Hongyun; Pisano, Albert P.; Cheng, Jim C.

    2013-01-01

    We report an efficient passive micro pump system combining the physical properties of nanowires and micropores. This nanowire-integrated microporous silicon membrane was created to feed coolant continuously onto the surface of the wick in a micro cooling device to ensure it remains hydrated and in case of dryout, allow for regeneration of the system. The membrane was fabricated by photoelectrochemical etching to form micropores followed by hydrothermal growth of nanowires. This study shows a promising approach to address thermal management challenges for next generation electronic devices with absence of external power

  17. Ultra-fast photon counting with a passive quenching silicon photomultiplier in the charge integration regime

    Zhang, Guoqing; Lina, Liu

    2018-02-01

    An ultra-fast photon counting method is proposed based on the charge integration of output electrical pulses of passive quenching silicon photomultipliers (SiPMs). The results of the numerical analysis with actual parameters of SiPMs show that the maximum photon counting rate of a state-of-art passive quenching SiPM can reach ~THz levels which is much larger than that of the existing photon counting devices. The experimental procedure is proposed based on this method. This photon counting regime of SiPMs is promising in many fields such as large dynamic light power detection.

  18. The SuperB Silicon Vertex Tracker and 3D vertical integration

    Re, Valerio

    2011-01-01

    The construction of the SuperB high luminosity collider was approved and funded by the Italian government in 2011. The performance specifications set by the target luminosity of this machine (> 10^36 cm^-2 s^-1) ask for the development of a Silicon Vertex Tracker with high resolution, high tolerance to radiation and excellent capability of handling high data rates. This paper reviews the R&D activity that is being carried out for the SuperB SVT. Special emphasis is given to the option of exploiting 3D vertical integration to build advanced pixel sensors and readout electronics that are able to comply with SuperB vertexing requirements.

  19. Building integration photovoltaic module with reference to Ghana: using triple junction amorphous silicon

    Essah, Emmanuel Adu

    2010-01-01

    This paper assesses the potential for using building integrated photovoltaic (BIPV) \\ud roof shingles made from triple-junction amorphous silicon (3a-Si) for electrification \\ud and as a roofing material in tropical countries, such as Accra, Ghana. A model roof \\ud was constructed using triple-junction amorphous (3a-Si) PV on one section and \\ud conventional roofing tiles on the other. The performance of the PV module and tiles \\ud were measured, over a range of ambient temperatures and solar...

  20. An analog front-end bipolar-transistor integrated circuit for the SDC silicon tracker

    Kipnis, I.; Spieler, H.; Collins, T.

    1994-01-01

    Since 1989 the Solenoidal Detector Collaboration (SDC) has been developing a general purpose detector to be operated at the Superconducting Super Collider (SSC). A low-noise, low-power, high-bandwidth, radiation hard, silicon bipolar-transistor full-custom integrated circuit (IC) containing 64 channels of analog signal processing has been developed for the SDS silicon tracker. The IC was designed and tested at LBL and was fabricated using AT and T's CBIC-U2, 4 GHz f T complementary bipolar technology. Each channel contains the following functions: low-noise preamplification, pulse shaping and threshold discrimination. This is the first iteration of the production analog IC for the SDC silicon tracker. The IC is laid out to directly match the 50 μm pitch double-sided silicon strip detector. The chip measures 6.8 mm x 3.1 mm and contains 3,600 transistors. Three stages of amplification provide 180 mV/fC of gain with a 35 nsec peaking time at the comparator input. For a 14 pF detector capacitance, the equivalent noise charge is 1300 el. rms at a power consumption of 1 mW/channel from a single 3.5 V supply. With the discriminator threshold set to 4 times the noise level, a 16nsec time-walk for 1.25 to 10 fC signals is achieved using a time-walk compensation network. Irradiation tests at TRIUMF to a φ = 10 14 protons/cm 2 have been performed on the JC, demonstrating the radiation hardness of the complementary bipolar process

  1. Physical and electrical characterization of corundum substrates and epitaxial silicon layers in view of fabricating integrated circuits

    Trilhe, J.; Legal, H.; Rolland, G.

    1975-01-01

    The S.O.S. technology (silicon on insulating substrate) allows compact, radiation hard, fast integrated circuits to be fabricated. It is noticeable that complex integrated circuits on corundum substrates obtained with various fabrication processes have various electrical characteristics. Possible correlations between the macroscopic defects of the substrate and the electrical characteristics of the circuit were investigated [fr

  2. A MoTe2-based light-emitting diode and photodetector for silicon photonic integrated circuits.

    Bie, Ya-Qing; Grosso, Gabriele; Heuck, Mikkel; Furchi, Marco M; Cao, Yuan; Zheng, Jiabao; Bunandar, Darius; Navarro-Moratalla, Efren; Zhou, Lin; Efetov, Dmitri K; Taniguchi, Takashi; Watanabe, Kenji; Kong, Jing; Englund, Dirk; Jarillo-Herrero, Pablo

    2017-12-01

    One of the current challenges in photonics is developing high-speed, power-efficient, chip-integrated optical communications devices to address the interconnects bottleneck in high-speed computing systems. Silicon photonics has emerged as a leading architecture, in part because of the promise that many components, such as waveguides, couplers, interferometers and modulators, could be directly integrated on silicon-based processors. However, light sources and photodetectors present ongoing challenges. Common approaches for light sources include one or few off-chip or wafer-bonded lasers based on III-V materials, but recent system architecture studies show advantages for the use of many directly modulated light sources positioned at the transmitter location. The most advanced photodetectors in the silicon photonic process are based on germanium, but this requires additional germanium growth, which increases the system cost. The emerging two-dimensional transition-metal dichalcogenides (TMDs) offer a path for optical interconnect components that can be integrated with silicon photonics and complementary metal-oxide-semiconductors (CMOS) processing by back-end-of-the-line steps. Here, we demonstrate a silicon waveguide-integrated light source and photodetector based on a p-n junction of bilayer MoTe 2 , a TMD semiconductor with an infrared bandgap. This state-of-the-art fabrication technology provides new opportunities for integrated optoelectronic systems.

  3. A MoTe2-based light-emitting diode and photodetector for silicon photonic integrated circuits

    Bie, Ya-Qing; Grosso, Gabriele; Heuck, Mikkel; Furchi, Marco M.; Cao, Yuan; Zheng, Jiabao; Bunandar, Darius; Navarro-Moratalla, Efren; Zhou, Lin; Efetov, Dmitri K.; Taniguchi, Takashi; Watanabe, Kenji; Kong, Jing; Englund, Dirk; Jarillo-Herrero, Pablo

    2017-12-01

    One of the current challenges in photonics is developing high-speed, power-efficient, chip-integrated optical communications devices to address the interconnects bottleneck in high-speed computing systems. Silicon photonics has emerged as a leading architecture, in part because of the promise that many components, such as waveguides, couplers, interferometers and modulators, could be directly integrated on silicon-based processors. However, light sources and photodetectors present ongoing challenges. Common approaches for light sources include one or few off-chip or wafer-bonded lasers based on III-V materials, but recent system architecture studies show advantages for the use of many directly modulated light sources positioned at the transmitter location. The most advanced photodetectors in the silicon photonic process are based on germanium, but this requires additional germanium growth, which increases the system cost. The emerging two-dimensional transition-metal dichalcogenides (TMDs) offer a path for optical interconnect components that can be integrated with silicon photonics and complementary metal-oxide-semiconductors (CMOS) processing by back-end-of-the-line steps. Here, we demonstrate a silicon waveguide-integrated light source and photodetector based on a p-n junction of bilayer MoTe2, a TMD semiconductor with an infrared bandgap. This state-of-the-art fabrication technology provides new opportunities for integrated optoelectronic systems.

  4. Integration Science and Technology of Silicon-Based Ceramics and Composites:Technical Challenges and Opportunities

    Singh, M.

    2013-01-01

    Ceramic integration technologies enable hierarchical design and manufacturing of intricate ceramic and composite parts starting with geometrically simpler units that are subsequently joined to themselves and/or to metals to create components with progressively higher levels of complexity and functionality. However, for the development of robust and reliable integrated systems with optimum performance for high temperature applications, detailed understanding of various thermochemical and thermomechanical factors is critical. Different technical approaches are required for the integration of ceramic to ceramic and ceramic to metal systems. Active metal brazing, in particular, is a simple and cost-effective method to integrate ceramic to metallic components. Active braze alloys usually contain a reactive filler metal (e.g., Ti, Cr, V, Hf etc) that promotes wettability and spreading by inducing chemical reactions with the ceramics and composites. In this presentation, various examples of brazing of silicon nitride to themselves and to metallic systems are presented. Other examples of joining of ceramic composites (C/SiC and SiC/SiC) using ceramic interlayers and the resulting microstructures are also presented. Thermomechanical characterization of joints is presented for both types of systems. In addition, various challenges and opportunities in design, fabrication, and testing of integrated similar (ceramic-ceramic) and dissimilar (ceramic-metal) material systems will be discussed. Potential opportunities and need for the development of innovative design philosophies, approaches, and integrated system testing under simulated application conditions will also be presented.

  5. MIDAS: Automated Approach to Design Microwave Integrated Inductors and Transformers on Silicon

    L. Aluigi

    2013-09-01

    Full Text Available The design of modern radiofrequency integrated circuits on silicon operating at microwave and millimeter-waves requires the integration of several spiral inductors and transformers that are not commonly available in the process design-kits of the technologies. In this work we present an auxiliary CAD tool for Microwave Inductor (and transformer Design Automation on Silicon (MIDAS that exploits commercial simulators and allows the implementation of an automatic design flow, including three-dimensional layout editing and electromagnetic simulations. In detail, MIDAS allows the designer to derive a preliminary sizing of the inductor (transformer on the bases of the design entries (specifications. It draws the inductor (transformer layers for the specific process design kit, including vias and underpasses, with or without patterned ground shield, and launches the electromagnetic simulations, achieving effective design automation with respect to the traditional design flow for RFICs. With the present software suite the complete design time is reduced significantly (typically 1 hour on a PC based on Intel® Pentium® Dual 1.80GHz CPU with 2-GB RAM. Afterwards both the device equivalent circuit and the layout are ready to be imported in the Cadence environment.

  6. Silicon photonic integrated circuits with electrically programmable non-volatile memory functions.

    Song, J-F; Lim, A E-J; Luo, X-S; Fang, Q; Li, C; Jia, L X; Tu, X-G; Huang, Y; Zhou, H-F; Liow, T-Y; Lo, G-Q

    2016-09-19

    Conventional silicon photonic integrated circuits do not normally possess memory functions, which require on-chip power in order to maintain circuit states in tuned or field-configured switching routes. In this context, we present an electrically programmable add/drop microring resonator with a wavelength shift of 426 pm between the ON/OFF states. Electrical pulses are used to control the choice of the state. Our experimental results show a wavelength shift of 2.8 pm/ms and a light intensity variation of ~0.12 dB/ms for a fixed wavelength in the OFF state. Theoretically, our device can accommodate up to 65 states of multi-level memory functions. Such memory functions can be integrated into wavelength division mutiplexing (WDM) filters and applied to optical routers and computing architectures fulfilling large data downloading demands.

  7. Carbon dioxide as a green carbon source for the synthesis of carbon cages encapsulating porous silicon as high performance lithium-ion battery anodes.

    Zhang, Yaguang; Du, Ning; Chen, Yifan; Lin, Yangfan; Jiang, Jinwei; He, Yuanhong; Lei, Yu; Yang, Deren

    2018-03-28

    Si/C composite is one of the most promising candidate materials for next-generation lithium-ion battery anodes. Herein, we demonstrate the novel structure of carbon cages encapsulating porous Si synthesized by the reaction between magnesium silicide (Mg 2 Si) and carbon dioxide (CO 2 ) and subsequent acid washing. Benefitting from the in situ deposition through magnesiothermic reduction of CO 2 , the carbon cage seals the inner Si completely and shows higher graphitization than that obtained from the decomposition of acetylene. After removing MgO, pores are created, which can accommodate the volume change of the Si anode during the charge/discharge process. As the anode material for lithium-ion batteries, the porous Si/C electrode shows a charge capacity of ∼1124 mA h g -1 after 100 cycles with 86.4% capacity retention at the current density of 0.4 A g -1 . When the current density increases to 1.6 and 3.2 A g -1 , the capacity can still be maintained at ∼860 and ∼460 mA h g -1 , respectively. The prominent cycling and rate performance is contributed by the built-in space for Si expansion, static carbon cages that prevent penetration of electrolyte and stabilize the solid electrolyte interface (SEI) outside, and fast charge transport by the novel structure.

  8. Integration of antibody by surface functionalization of graphite-encapsulated magnetic beads using ammonia gas plasma technology for capturing influenza A virus.

    Sakudo, Akikazu; Chou, Han; Ikuta, Kazuyoshi; Nagatsu, Masaaki

    2015-05-01

    Antibody-integrated magnetic beads have been functionalized for influenza A virus capture. First, ammonia plasma produced by a radio frequency power source was reacted with the surface of graphite-encapsulated magnetic beads to introduce amino groups. Anti-influenza A virus hemagglutinin antibody was then anchored by its surface sulfide groups to the amino groups on the beads via N-succinimidyl 3-(2-pyridyldithio) propionate. After incubation with influenza A virus, adsorption of the virus to the beads was confirmed by immunochromatography, polymerase chain reaction (PCR), enzyme-linked immunosorbent assay (ELISA), and inoculation of chicken embryonated eggs, indicating that virus infectivity is maintained and that the proposed method is useful for the enhanced detection and isolation of influenza A virus. Copyright © 2015 Elsevier Ltd. All rights reserved.

  9. Encapsulation of Fluidic Tubing and Microelectrodes in Microfluidic Devices: Integrating Off-Chip Process and Coupling Conventional Capillary Electrophoresis with Electrochemical Detection.

    Becirovic, Vedada; Doonan, Steven R; Martin, R Scott

    2013-08-21

    In this paper, an approach to fabricate epoxy or polystyrene microdevices with encapsulated tubing and electrodes is described. Key features of this approach include a fixed alignment between the fluidic tubing and electrodes, the ability to polish the device when desired, and the low dead volume nature of the fluidic interconnects. It is shown that a variety of tubing can be encapsulated with this approach, including fused silica capillary, polyetheretherketone (PEEK), and perfluoroalkoxy (PFA), with the resulting tubing/microchip interface not leading to significant band broadening or plug dilution. The applicability of the devices with embedded tubing is demonstrated by integrating several off-chip analytical methods to the microchip. This includes droplet transfer, droplet desegmentation, and microchip-based flow injection analysis. Off-chip generated droplets can be transferred to the microchip with minimal coalescence, while flow injection studies showed improved peak shape and sensitivity when compared to the use of fluidic interconnects with an appreciable dead volume. Importantly, it is shown that this low dead volume approach can be extended to also enable the integration of conventional capillary electrophoresis (CE) with electrochemical detection. This is accomplished by embedding fused silica capillary along with palladium (for grounding the electrophoresis voltage) and platinum (for detection) electrodes. With this approach, up to 128,000 theoretical plates for dopamine was possible. In all cases, the tubing and electrodes are housed in a rigid base; this results in extremely robust devices that will be of interest to researchers wanting to develop microchips for use by non-experts.

  10. Thermally controlled coupling of a rolled-up microtube integrated with a waveguide on a silicon electronic-photonic integrated circuit.

    Zhong, Qiuhang; Tian, Zhaobing; Veerasubramanian, Venkat; Dastjerdi, M Hadi Tavakoli; Mi, Zetian; Plant, David V

    2014-05-01

    We report on the first experimental demonstration of the thermal control of coupling strength between a rolled-up microtube and a waveguide on a silicon electronic-photonic integrated circuit. The microtubes are fabricated by selectively releasing a coherently strained GaAs/InGaAs heterostructure bilayer. The fabricated microtubes are then integrated with silicon waveguides using an abruptly tapered fiber probe. By tuning the gap between the microtube and the waveguide using localized heaters, the microtube-waveguide evanescent coupling is effectively controlled. With heating, the extinction ratio of a microtube whispering-gallery mode changes over an 18 dB range, while the resonant wavelength remains approximately unchanged. Utilizing this dynamic thermal tuning effect, we realize coupling modulation of the microtube integrated with the silicon waveguide at 2 kHz with a heater voltage swing of 0-6 V.

  11. MEMS-based silicon cantilevers with integrated electrothermal heaters for airborne ultrafine particle sensing

    Wasisto, Hutomo Suryo; Merzsch, Stephan; Waag, Andreas; Peiner, Erwin

    2013-05-01

    The development of low-cost and low-power MEMS-based cantilever sensors for possible application in hand-held airborne ultrafine particle monitors is described in this work. The proposed resonant sensors are realized by silicon bulk micromachining technology with electrothermal excitation, piezoresistive frequency readout, and electrostatic particle collection elements integrated and constructed in the same sensor fabrication process step of boron diffusion. Built-in heating resistor and full Wheatstone bridge are set close to the cantilever clamp end for effective excitation and sensing, respectively, of beam deflection. Meanwhile, the particle collection electrode is located at the cantilever free end. A 300 μm-thick, phosphorus-doped silicon bulk wafer is used instead of silicon-on-insulator (SOI) as the starting material for the sensors to reduce the fabrication costs. To etch and release the cantilevers from the substrate, inductively coupled plasma (ICP) cryogenic dry etching is utilized. By controlling the etching parameters (e.g., temperature, oxygen content, and duration), cantilever structures with thicknesses down to 10 - 20 μm are yielded. In the sensor characterization, the heating resistor is heated and generating thermal waves which induce thermal expansion and further cause mechanical bending strain in the out-of-plane direction. A resonant frequency of 114.08 +/- 0.04 kHz and a quality factor of 1302 +/- 267 are measured in air for a fabricated rectangular cantilever (500x100x13.5 μm3). Owing to its low power consumption of a few milliwatts, this electrothermal cantilever is suitable for replacing the current external piezoelectric stack actuator in the next generation of the miniaturized cantilever-based nanoparticle detector (CANTOR).

  12. Heterogenous integration of a thin-film GaAs photodetector and a microfluidic device on a silicon substrate

    Song, Fuchuan; Xiao, Jing; Udawala, Fidaali; Seo, Sang-Woo

    2011-01-01

    In this paper, heterogeneous integration of a III–V semiconductor thin-film photodetector (PD) with a microfluidic device is demonstrated on a SiO 2 –Si substrate. Thin-film format of optical devices provides an intimate integration of optical functions with microfluidic devices. As a demonstration of a multi-material and functional system, the biphasic flow structure in the polymeric microfluidic channels was co-integrated with a III–V semiconductor thin-film PD. The fluorescent drops formed in the microfluidic device are successfully detected with an integrated thin-film PD on a silicon substrate. The proposed three-dimensional integration structure is an alternative approach to combine optical functions with microfluidic functions on silicon-based electronic functions.

  13. Silicon Hard-Stop Mesas for 3D Integration of Superconducting Qubits

    Kim, David; Rosenberg, Danna; Osadchy, Brenda; Calusine, Greg; Das, Rabindra; Melville, Alexander; Yoder, Jonilyn; Yost, Donna-Ruth; Racz, Livia; Oliver, William

    As quantum computing with superconducting qubits advances past the few-qubit stage, implementing 3D packaging/integration to route readout/control lines will become increasingly important. One approach is to bond chips that perform different functions using indium bump bonds. Because indium is malleable, however, achieving the desired spacing and tilt between two chips can be challenging. We present an approach based on etching several microns into the silicon substrate to produce hard stop silicon posts. Since this process involves etching into a pristine substrate, it is essential to evaluate its impact on qubit performance. We report the etched surface's effect on the resonator quality factor and qubit coherence time, as well as the improvement in planarity and tilt. This research was funded in part by the Office of the Director of National Intelligence (ODNI), Intelligence Advanced Research Projects Activity (IARPA) and by the Assistant Secretary of Defense for Research & Engineering under Air Force Contract No. FA8721-05-C-0002. The views and conclusions contained herein are those of the authors and should not be interpreted as necessarily representing the official policies or endorsements, either expressed or implied, of ODNI, IARPA, or the US Government.

  14. Mechanical integration of the detector components for the CBM silicon tracking system

    Vasylyev, Oleg; Niebur, Wolfgang [GSI Helmholtzzentrum fuer Schwerionenforschung GmbH, Darmstadt (Germany); Collaboration: CBM-Collaboration

    2016-07-01

    The Compressed Baryonic Matter experiment (CBM) at FAIR is designed to explore the QCD phase diagram in the region of high net-baryon densities. The central detector component, the Silicon Tracking System (STS) is based on double-sided micro-strip sensors. In order to achieve the physics performance, the detector mechanical structures should be developed taking into account the requirements of the CBM experiments: low material budget, high radiation environment, interaction rates, aperture for the silicon tracking, detector segmentation and mounting precision. A functional plan of the STS and its surrounding structural components is being worked out from which the STS system shape is derived and the power and cooling needs, the connector space requirements, life span of components and installation/repair aspects are determined. The mechanical integration is at the point of finalizing the design stage and moving towards production readiness. This contribution shows the current processing state of the following engineering tasks: construction space definition, carbon ladder shape and manufacturability, beam-pipe feedthrough structure, prototype construction, cable routing and modeling of the electronic components.

  15. Three hydrogenated amorphous silicon photodiodes stacked for an above integrated circuit colour sensor

    Gidon, Pierre; Giffard, Benoit; Moussy, Norbert; Parrein, Pascale; Poupinet, Ludovic [CEA-LETI, MINATEC, CEA-Grenoble, 17 rue des Martyrs, 38054 Grenoble Cedex 9 (France)

    2010-03-15

    We present theoretical simulation and experimental results of a new colour pixel structure. This pixel catches the light in three stacked amorphous silicon photodiodes encompassed between transparent electrodes. The optical structure has been simulated for signal optimisation. The thickness of each stacked layer is chosen in order to absorb the maximum of light and the three signals allow to linearly calculate the CIE colour coordinates 1 with minimum error and noise. The whole process is compatible with an above integrated circuit (IC) approach. Each photodiode is an n-i-p structure. For optical reason, the upper diode must be controlled down to 25 nm thickness. The first test pixel structure allows a good recovering of colour coordinates. The measured absorption spectrum of each photodiode is in good agreement with our simulations. This specific stack with three photodiodes per pixel totalises two times more signal than an above IC pixel under a standard Bayer pattern 2,3. In each square of this GretagMacbeth chart is the reference colour on the right and the experimentally measured colour on the left with three amorphous silicon photodiodes per pixel. (Abstract Copyright [2010], Wiley Periodicals, Inc.)

  16. III-V-on-Silicon Photonic Integrated Circuits for Spectroscopic Sensing in the 2-4 μm Wavelength Range.

    Wang, Ruijun; Vasiliev, Anton; Muneeb, Muhammad; Malik, Aditya; Sprengel, Stephan; Boehm, Gerhard; Amann, Markus-Christian; Šimonytė, Ieva; Vizbaras, Augustinas; Vizbaras, Kristijonas; Baets, Roel; Roelkens, Gunther

    2017-08-04

    The availability of silicon photonic integrated circuits (ICs) in the 2-4 μm wavelength range enables miniature optical sensors for trace gas and bio-molecule detection. In this paper, we review our recent work on III-V-on-silicon waveguide circuits for spectroscopic sensing in this wavelength range. We first present results on the heterogeneous integration of 2.3 μm wavelength III-V laser sources and photodetectors on silicon photonic ICs for fully integrated optical sensors. Then a compact 2 μm wavelength widely tunable external cavity laser using a silicon photonic IC for the wavelength selective feedback is shown. High-performance silicon arrayed waveguide grating spectrometers are also presented. Further we show an on-chip photothermal transducer using a suspended silicon-on-insulator microring resonator used for mid-infrared photothermal spectroscopy.

  17. III–V-on-Silicon Photonic Integrated Circuits for Spectroscopic Sensing in the 2–4 μm Wavelength Range

    Wang, Ruijun; Vasiliev, Anton; Muneeb, Muhammad; Malik, Aditya; Sprengel, Stephan; Boehm, Gerhard; Amann, Markus-Christian; Šimonytė, Ieva; Vizbaras, Augustinas; Vizbaras, Kristijonas; Baets, Roel; Roelkens, Gunther

    2017-01-01

    The availability of silicon photonic integrated circuits (ICs) in the 2–4 μm wavelength range enables miniature optical sensors for trace gas and bio-molecule detection. In this paper, we review our recent work on III–V-on-silicon waveguide circuits for spectroscopic sensing in this wavelength range. We first present results on the heterogeneous integration of 2.3 μm wavelength III–V laser sources and photodetectors on silicon photonic ICs for fully integrated optical sensors. Then a compact 2 μm wavelength widely tunable external cavity laser using a silicon photonic IC for the wavelength selective feedback is shown. High-performance silicon arrayed waveguide grating spectrometers are also presented. Further we show an on-chip photothermal transducer using a suspended silicon-on-insulator microring resonator used for mid-infrared photothermal spectroscopy. PMID:28777291

  18. Optimization and validation of highly selective microfluidic integrated silicon nanowire chemical sensor

    Ehfaed, Nuri. A. K. H.; Bathmanathan, Shillan A. L.; Dhahi, Th S.; Adam, Tijjani; Hashim, Uda; Noriman, N. Z.

    2017-09-01

    The study proposed characterization and optimization of silicon nanosensor for specific detection of heavy metal. The sensor was fabricated in-house and conventional photolithography coupled with size reduction via dry etching process in an oxidation furnace. Prior to heavy metal heavy metal detection, the capability to aqueous sample was determined utilizing serial DI water at various. The sensor surface was surface modified with Organofunctional alkoxysilanes (3-aminopropyl) triethoxysilane (APTES) to create molecular binding chemistry. This has allowed interaction between heavy metals being measured and the sensor component resulting in increasing the current being measured. Due to its, excellent detection capabilities, this sensor was able to identify different group heavy metal species. The device was further integrated with sub-50 µm for chemical delivery.

  19. Impurity engineering of Czochralski silicon used for ultra large-scaled-integrated circuits

    Yang, Deren; Chen, Jiahe; Ma, Xiangyang; Que, Duanlin

    2009-01-01

    Impurities in Czochralski silicon (Cz-Si) used for ultra large-scaled-integrated (ULSI) circuits have been believed to deteriorate the performance of devices. In this paper, a review of the recent processes from our investigation on internal gettering in Cz-Si wafers which were doped with nitrogen, germanium and/or high content of carbon is presented. It has been suggested that those impurities enhance oxygen precipitation, and create both denser bulk microdefects and enough denuded zone with the desirable width, which is benefit of the internal gettering of metal contamination. Based on the experimental facts, a potential mechanism of impurity doping on the internal gettering structure is interpreted and, a new concept of 'impurity engineering' for Cz-Si used for ULSI is proposed.

  20. Low-loss compact multilayer silicon nitride platform for 3D photonic integrated circuits.

    Shang, Kuanping; Pathak, Shibnath; Guan, Binbin; Liu, Guangyao; Yoo, S J B

    2015-08-10

    We design, fabricate, and demonstrate a silicon nitride (Si(3)N(4)) multilayer platform optimized for low-loss and compact multilayer photonic integrated circuits. The designed platform, with 200 nm thick waveguide core and 700 nm interlayer gap, is compatible for active thermal tuning and applicable to realizing compact photonic devices such as arrayed waveguide gratings (AWGs). We achieve ultra-low loss vertical couplers with 0.01 dB coupling loss, multilayer crossing loss of 0.167 dB at 90° crossing angle, 50 μm bending radius, 100 × 2 μm(2) footprint, lateral misalignment tolerance up to 400 nm, and less than -52 dB interlayer crosstalk at 1550 nm wavelength. Based on the designed platform, we demonstrate a 27 × 32 × 2 multilayer star coupler.

  1. A monolithically integrated detector-preamplifier on high-resistivity silicon

    Holland, S.; Spieler, H.

    1990-02-01

    A monolithically integrated detector-preamplifier on high-resistivity silicon has been designed, fabricated and characterized. The detector is a fully depleted p-i-n diode and the preamplifier is implemented in a depletion-mode PMOS process which is compatible with detector processing. The amplifier is internally compensated and the measured gain-bandwidth product is 30 MHz with an input-referred noise of 15 nV/√Hz in the white noise regime. Measurements with an Am 241 radiation source yield an equivalent input noise charge of 800 electrons at 200 ns shaping time for a 1.4 mm 2 detector with on-chip amplifier in an experimental setup with substantial external pickup

  2. 3D silicon neural probe with integrated optical fibers for optogenetic modulation.

    Kim, Eric G R; Tu, Hongen; Luo, Hao; Liu, Bin; Bao, Shaowen; Zhang, Jinsheng; Xu, Yong

    2015-07-21

    Optogenetics is a powerful modality for neural modulation that can be useful for a wide array of biomedical studies. Penetrating microelectrode arrays provide a means of recording neural signals with high spatial resolution. It is highly desirable to integrate optics with neural probes to allow for functional study of neural tissue by optogenetics. In this paper, we report the development of a novel 3D neural probe coupled simply and robustly to optical fibers using a hollow parylene tube structure. The device shanks are hollow tubes with rigid silicon tips, allowing the insertion and encasement of optical fibers within the shanks. The position of the fiber tip can be precisely controlled relative to the electrodes on the shank by inherent design features. Preliminary in vivo rat studies indicate that these devices are capable of optogenetic modulation simultaneously with 3D neural signal recording.

  3. Integrated reconfigurable microring based silicon WDM receiver for on-chip optical interconnect

    Shen, Ao; Yang, Long-Zhi; Dai, Ting-Ge; Hao, Yin-Lei; Jiang, Xiao-Qing; Yang, Jian-Yi; Qiu, Chen

    2015-01-01

    We demonstrate an integrated reconfigurable wavelength division multiplexing receiver on the silicon-on-insulator (SOI) platform. The receiver is composed of a 1 × 8 thermally tunable microring resonator filter and Ge–Si photodetectors. With low thermal tuning powers the channel allocation of the receiver can be reconfigured with high accuracy and flexibility. The thermal tuning efficiency is approximately 8 mW nm −1 . We show eight-channel configurations with channel spacing of 100 GHz and 50 GHz and a configuration in which all eight channels cover an entire free spectral range of the ring with uniform channel spacing of 1.2 nm. Each channel can receive high-quality signals with a data rate of up to 13.5 Gb s −1 ; thus an aggregate data rate higher than 100 Gb s −1 can be achieved. (paper)

  4. Efficient generation of single and entangled photons on a silicon photonic integrated chip

    Mower, Jacob; Englund, Dirk

    2011-01-01

    We present a protocol for generating on-demand, indistinguishable single photons on a silicon photonic integrated chip. The source is a time-multiplexed spontaneous parametric down-conversion element that allows optimization of single-photon versus multiphoton emission while realizing high output rate and indistinguishability. We minimize both the scaling of active elements and the scaling of active element loss with multiplexing. We then discuss detection strategies and data processing to further optimize the procedure. We simulate an improvement in single-photon-generation efficiency over previous time-multiplexing protocols, assuming existing fabrication capabilities. We then apply this system to generate heralded Bell states. The generation efficiency of both nonclassical states could be increased substantially with improved fabrication procedures.

  5. Silicon-Based Integration of Groups III, IV, V Chemical Vapor Depositions in High-Quality Photodiodes

    Sammak, A.

    2012-01-01

    Heterogeneous integration of III-V semiconductors with silicon (Si) technology is an interesting approach to utilize the advantages of both high-speed photonic and electronic properties. The work presented in this thesis is initiated by this major goal of merging III-V semiconductor technology with

  6. Structural Integration of Silicon Solar Cells and Lithium-ion Batteries Using Printed Electronics

    Kang, Jin Sung

    Inkjet printing of electrode using copper nanoparticle ink is presented. Electrode was printed on a flexible glass epoxy composite substrate using drop on demand piezoelectric dispenser and was sintered at 200°C in N 2 gas condition. The printed electrodes were made with various widths and thicknesses. Surface morphology of electrode was analyzed using scanning electron microscope (SEM) and atomic force microscope (AFM). Reliable dimensions for printed electronics were found from this study. Single-crystalline silicon solar cells were tested under four-point bending to find the feasibility of directly integrating them onto a carbon fiber/epoxy composite laminate. These solar cells were not able to withstand 0.2% strain. On the other hand, thin-film amorphous silicon solar cells were subjected to flexural fatigue loadings. The current density-voltage curves were analyzed at different cycles, and there was no noticeable degradation on its performance up to 100 cycles. A multifunctional composite laminate which can harvest and store solar energy was fabricated using printed electrodes. The integrated printed circuit board (PCB) was co-cured with a carbon/epoxy composite laminate by the vacuum bag molding process in an autoclave; an amorphous silicon solar cell and a thin-film solid state lithium-ion (Li-ion) battery were adhesively joined and electrically connected to a thin flexible PCB; and then the passive components such as resistors and diodes were electrically connected to the printed circuit board by silver pasting. Since a thin-film solid state Li-ion battery was not able to withstand tensile strain above 0.4%, thin Li-ion polymer batteries were tested under various mechanical loadings and environmental conditions to find the feasibility of using the polymer batteries for our multifunctional purpose. It was found that the Li-ion polymer batteries were stable under pressure and tensile loading without any noticeable degradation on its charge and discharge

  7. Label-free silicon photonic biosensor system with integrated detector array

    Yan, Rongjin; Mestas, Santano P.; Yuan, Guangwei; Safaisini, Rashid; Dandy, David S.

    2010-01-01

    An integrated, inexpensive, label-free photonic waveguide biosensor system with multi-analyte capability has been implemented on a silicon photonics integrated circuit from a commercial CMOS line and tested with nanofilms. The local evanescent array coupled (LEAC) biosensor is based on a new physical phenomenon that is fundamentally different from the mechanisms of other evanescent field sensors. Increased local refractive index at the waveguide’s upper surface due to the formation of a biological nanofilm causes local modulation of the evanescent field coupled into an array of photodetectors buried under the waveguide. The planar optical waveguide biosensor system exhibits sensitivity of 20%/nm photocurrent modulation in response to adsorbed bovine serum albumin (BSA) layers less than 3 nm thick. In addition to response to BSA, an experiment with patterned photoresist as well as beam propagation method simulations support the evanescent field shift principle. The sensing mechanism enables the integration of all optical and electronic components for a multi-analyte biosensor system on a chip. PMID:19606292

  8. Label-free silicon photonic biosensor system with integrated detector array.

    Yan, Rongjin; Mestas, Santano P; Yuan, Guangwei; Safaisini, Rashid; Dandy, David S; Lear, Kevin L

    2009-08-07

    An integrated, inexpensive, label-free photonic waveguide biosensor system with multi-analyte capability has been implemented on a silicon photonics integrated circuit from a commercial CMOS line and tested with nanofilms. The local evanescent array coupled (LEAC) biosensor is based on a new physical phenomenon that is fundamentally different from the mechanisms of other evanescent field sensors. Increased local refractive index at the waveguide's upper surface due to the formation of a biological nanofilm causes local modulation of the evanescent field coupled into an array of photodetectors buried under the waveguide. The planar optical waveguide biosensor system exhibits sensitivity of 20%/nm photocurrent modulation in response to adsorbed bovine serum albumin (BSA) layers less than 3 nm thick. In addition to response to BSA, an experiment with patterned photoresist as well as beam propagation method simulations support the evanescent field shift principle. The sensing mechanism enables the integration of all optical and electronic components for a multi-analyte biosensor system on a chip.

  9. RF characterization and analytical modelling of through silicon vias and coplanar waveguides for 3D integration

    Lamy, Y.; Jinesh, K.B.; Roozeboom, F.; Gravesteijn, D.J.; Besling, W.F.A.

    2010-01-01

    High-aspect ratio (12.5) through silicon vias (TSV) made in a silicon interposer have been electrically characterized in the direct current (dc) and microwave regimes for 3D interconnect applications. The vias were micro-machined in silicon, insulated, and filled with copper employing a bottom-up

  10. Progress Report 15, December 1979-April 1980, and proceedings of the fifteenth Project Integration Meeting

    1980-01-01

    Progress made by the Low-Cost Solar Array Project during the period December 1979 to April 1980 is reported. Reports on project analysis and integration; technology development in silicon material, large-area silicon sheet and encapsulation; production process and equipment development; engineering; and operations are included. Also, a report on, and copies of visual presentations made at, the Project Integration Meeting held April 2 and 3, 1980, are included.

  11. 2 μm wavelength range InP-based type-II quantum well photodiodes heterogeneously integrated on silicon photonic integrated circuits.

    Wang, Ruijun; Sprengel, Stephan; Muneeb, Muhammad; Boehm, Gerhard; Baets, Roel; Amann, Markus-Christian; Roelkens, Gunther

    2015-10-05

    The heterogeneous integration of InP-based type-II quantum well photodiodes on silicon photonic integrated circuits for the 2 µm wavelength range is presented. A responsivity of 1.2 A/W at a wavelength of 2.32 µm and 0.6 A/W at 2.4 µm wavelength is demonstrated. The photodiodes have a dark current of 12 nA at -0.5 V at room temperature. The absorbing active region of the integrated photodiodes consists of six periods of a "W"-shaped quantum well, also allowing for laser integration on the same platform.

  12. A silicon integrated micro nano-positioning XY-stage for nano-manipulation

    Sun Lining; Wang Jiachou; Rong Weibin; Li Xinxin; Bao Haifei

    2008-01-01

    An integrated micro XY-stage with a 2 × 2 mm 2 movable table is designed and fabricated for application in nanometer-scale operation and nanometric positioning precision. The device integrates the functions of both actuating and sensing in a monolithic chip and is mainly composed of a silicon-based XY-stage, comb-drive actuator and a displacement sensor, which are developed by using double-sided bulk-micromachining technology. The high-aspect-ratio comb-driven XY-stage is achieved by deep reactive ion etching (DRIE) on both sides of the wafer. The displacement sensor is formed on four vertical sidewall surface piezoresistors with a full Wheatstone bridge circuit, where a novel fabrication process of a vertical sidewall surface piezoresistor is proposed. Comprehensive design and analysis of the comb actuator, the piezoresistive displacement sensor and the XY-stage are given in full detail, and the experimental results verify the design and fabrication of the device. The final realization of the device shows that the sensitivity of the fabricated piezoresistive sensors is better than 1.17 mV µm −1 without amplification, and the linearity is better than 0.814%. Under 28.5 V driving voltage, a ±10 µm single-axis displacement is measured without crosstalk and the resonant frequency is measured at 983 Hz in air

  13. An integrated nonlinear optical loop mirror in silicon photonics for all-optical signal processing

    Zifei Wang

    2018-02-01

    Full Text Available The nonlinear optical loop mirror (NOLM has been studied for several decades and has attracted considerable attention for applications in high data rate optical communications and all-optical signal processing. The majority of NOLM research has focused on silica fiber-based implementations. While various fiber designs have been considered to increase the nonlinearity and manage dispersion, several meters to hundreds of meters of fiber are still required. On the other hand, there is increasing interest in developing photonic integrated circuits for realizing signal processing functions. In this paper, we realize the first-ever passive integrated NOLM in silicon photonics and demonstrate its application for all-optical signal processing. In particular, we show wavelength conversion of 10 Gb/s return-to-zero on-off keying (RZ-OOK signals over a wavelength range of 30 nm with error-free operation and a power penalty of less than 2.5 dB, we achieve error-free nonreturn to zero (NRZ-to-RZ modulation format conversion at 10 Gb/s also with a power penalty of less than 2.8 dB, and we obtain error-free all-optical time-division demultiplexing of a 40 Gb/s RZ-OOK data signal into its 10 Gb/s tributary channels with a maximum power penalty of 3.5 dB.

  14. Low-Cost Solar Array Project. Progress report 14, August 1979-December 1979 and proceedings of the 14th Project Integration Meeting

    1980-01-01

    Progress made by the Low-Cost Solar Array Project during the period August through November 1979, is described. Progress on project analysis and integration; technology development in silicon material, large-area sheet silicon, and encapsulation; production process and equipment development; engineering, and operations, and the steps taken to integrate these efforts are detailed. A report on the Project Integration Meeting held December 5-6, 1979, including copies of the visual materials used, is presented.

  15. Low-Cost Solar Array Project. Progress report 12, January-April 1979 and proceedings of the 12th Project Integration Meeting

    1979-01-01

    This report describes progress made by the Low-Cost Solar Array Project during the period January through April 1979. It includes reports on project analysis and integration; technology development in silicon material, large-area sheet silicon, and encapsulation; production process and equipment development; engineering and operations, and a discussion of the steps taken to integrate these efforts. It includes a report on, and copies of viewgraphs presented at the Project Integration Meeting held April 4-5, 1979.

  16. Encapsulation of radioactive waste

    Pordes, O.; Plows, J.P.

    1980-01-01

    A method is described for encapsulating a particular radioactive waste which consists of suspending the waste in a viscous liquid encapsulating material, of synthetic resin monomers or prepolymers, and setting the encapsulating material by addition or condensation polymerization to form a solid material in which the waste is dispersed. (author)

  17. Quantum Coherent States and Path Integral Method to Stochastically Determine the Anisotropic Volume Expansion in Lithiated Silicon Nanowires

    Donald C. Boone

    2017-10-01

    Full Text Available This computational research study will analyze the multi-physics of lithium ion insertion into a silicon nanowire in an attempt to explain the electrochemical kinetics at the nanoscale and quantum level. The electron coherent states and a quantum field version of photon density waves will be the joining theories that will explain the electron-photon interaction within the lithium-silicon lattice structure. These two quantum particles will be responsible for the photon absorption rate of silicon atoms that are hypothesized to be the leading cause of breaking diatomic silicon covalent bonds that ultimately leads to volume expansion. It will be demonstrated through the combination of Maxwell stress tensor, optical amplification and path integrals that a stochastic analyze using a variety of Poisson distributions that the anisotropic expansion rates in the <110>, <111> and <112> orthogonal directions confirms the findings ascertained in previous works made by other research groups. The computational findings presented in this work are similar to those which were discovered experimentally using transmission electron microscopy (TEM and simulation models that used density functional theory (DFT and molecular dynamics (MD. The refractive index and electric susceptibility parameters of lithiated silicon are interwoven in the first principle theoretical equations and appears frequently throughout this research presentation, which should serve to demonstrate the importance of these parameters in the understanding of this component in lithium ion batteries.

  18. Photovoltaic module encapsulation design and materials selection, volume 1

    Cuddihy, E.; Carroll, W.; Coulbert, C.; Gupta, A.; Liang, R. H.

    1982-01-01

    Encapsulation material system requirements, material selection criteria, and the status and properties of encapsulation materials and processes available are presented. Technical and economic goals established for photovoltaic modules and encapsulation systems and their status are described. Available encapsulation technology and data are presented to facilitate design and material selection for silicon flat plate photovoltaic modules, using the best materials available and processes optimized for specific power applications and geographic sites. The operational and environmental loads that encapsulation system functional requirements and candidate design concepts and materials that are identified to have the best potential to meet the cost and performance goals for the flat plate solar array project are described. Available data on encapsulant material properties, fabrication processing, and module life and durability characteristics are presented.

  19. Development and miniaturization of a photoacoustic silicon integrated spectrometer for trace gas analysis; Etude et developpement d`un spectrometre photoacoustique integre sur silicium pour analyse de gaz

    Jourdain, A.

    1998-10-29

    The study deals with the integration on silicon wafers of an infrared spectrometer for carbon dioxide measurements. Photoacoustic detection that measures a differential pressure in a cavity turns out to be the best spectroscopic technique for miniaturization and integration. The micro-system is composed of two main components: an infrared light source on a silicon nitride membrane and a component integrating a tunable optical filter, a microphone for detection and a micro-cavity. After a theoretical study of the different components, each element is realized with the microelectronic techniques such as photolithography, thin films deposits and dry and wet etching. A resin sealing of all the different elements realizes the final micro-spectrophotometer. A characterization of the components is done thanks to the realization of an electronic specific set-up. (author) 107 refs.

  20. A 12-bit SAR ADC integrated on a multichannel silicon drift detector readout IC

    Schembari, F., E-mail: filippo.schembari@polimi.it [Politecnico di Milano, Dipartimento di Elettronica, Informazione e Bioingegneria, via Golgi 40, 20133 Milano (Italy); INFN, Sezione di Milano, via Celoria 16, 20133 Milano (Italy); Bellotti, G.; Fiorini, C. [Politecnico di Milano, Dipartimento di Elettronica, Informazione e Bioingegneria, via Golgi 40, 20133 Milano (Italy); INFN, Sezione di Milano, via Celoria 16, 20133 Milano (Italy)

    2016-07-11

    A 12-bit analog-to-digital converter (ADC) addressed to Silicon-Drift Detectors (SDDs) multichannel readout ASICs for X- and gamma-ray applications is presented. Aiming at digitizing output multiplexed data from the upstream analog filters banks, the converter must ensure 11-bit accuracy and a sampling frequency of about 5 MS/s. The ADC architecture is the charge-redistribution (CR) successive-approximation register (SAR). A fully differential topology has also been chosen for better rejection of common-mode noise and disturbances. The internal DAC is made of binary-scaled capacitors, whose bottom plates are switched by the SAR logic to perform the binary search of the analog input value by means of the monotonic switching scheme. The A/D converter is integrated on SFERA, a multichannel ASIC fabricated in a standard CMOS 0.35 μm 3.3 V technology and it occupies an area of 0.42 mm{sup 2}. Simulated static performance shows monotonicity over the whole input–output characteristic. The description of the circuit topology and of inner blocks architectures together with the experimental characterization is here presented. - Highlights: • X- and γ-ray spectroscopy front-ends need to readout a high number of detectors. • Design efforts are increasingly oriented to compact and low-power ASICs. • A possible solution is the on-chip integration of the analog-to-digital converter. • A 12-bit CR successive-approximation-register ADC has been developed. • It is a suitable candidate as the digitizer to be integrated in multichannel ASICs.

  1. Silicon Nitride Photonic Integration Platforms for Visible, Near-Infrared and Mid-Infrared Applications

    Micó, Gloria; Pastor, Daniel; Pérez, Daniel; Doménech, José David; Fernández, Juan; Baños, Rocío; Alemany, Rubén; Sánchez, Ana M.; Cirera, Josep M.; Mas, Roser

    2017-01-01

    Silicon nitride photonics is on the rise owing to the broadband nature of the material, allowing applications of biophotonics, tele/datacom, optical signal processing and sensing, from visible, through near to mid-infrared wavelengths. In this paper, a review of the state of the art of silicon nitride strip waveguide platforms is provided, alongside the experimental results on the development of a versatile 300 nm guiding film height silicon nitride platform. PMID:28895906

  2. Silicon-Nitride-based Integrated Optofluidic Biochemical Sensors using a Coupled-Resonator Optical Waveguide

    Jiawei eWANG

    2015-04-01

    Full Text Available Silicon nitride (SiN is a promising material platform for integrating photonic components and microfluidic channels on a chip for label-free, optical biochemical sensing applications in the visible to near-infrared wavelengths. The chip-scale SiN-based optofluidic sensors can be compact due to a relatively high refractive index contrast between SiN and the fluidic medium, and low-cost due to the complementary metal-oxide-semiconductor (CMOS-compatible fabrication process. Here, we demonstrate SiN-based integrated optofluidic biochemical sensors using a coupled-resonator optical waveguide (CROW in the visible wavelengths. The working principle is based on imaging in the far field the out-of-plane elastic-light-scattering patterns of the CROW sensor at a fixed probe wavelength. We correlate the imaged pattern with reference patterns at the CROW eigenstates. Our sensing algorithm maps the correlation coefficients of the imaged pattern with a library of calibrated correlation coefficients to extract a minute change in the cladding refractive index. Given a calibrated CROW, our sensing mechanism in the spatial domain only requires a fixed-wavelength laser in the visible wavelengths as a light source, with the probe wavelength located within the CROW transmission band, and a silicon digital charge-coupled device (CCD / CMOS camera for recording the light scattering patterns. This is in sharp contrast with the conventional optical microcavity-based sensing methods that impose a strict requirement of spectral alignment with a high-quality cavity resonance using a wavelength-tunable laser. Our experimental results using a SiN CROW sensor with eight coupled microrings in the 680nm wavelength reveal a cladding refractive index change of ~1.3 × 10^-4 refractive index unit (RIU, with an average sensitivity of ~281 ± 271 RIU-1 and a noise-equivalent detection limit (NEDL of 1.8 ×10^-8 RIU ~ 1.0 ×10^-4 RIU across the CROW bandwidth of ~1 nm.

  3. Encapsulated Islet Transplantation: Where Do We Stand?

    Vaithilingam, Vijayaganapathy; Bal, Sumeet; Tuch, Bernard E

    2017-01-01

    Transplantation of pancreatic islets encapsulated within immuno-protective microcapsules is a strategy that has the potential to overcome graft rejection without the need for toxic immunosuppressive medication. However, despite promising preclinical studies, clinical trials using encapsulated islets have lacked long-term efficacy, and although generally considered clinically safe, have not been encouraging overall. One of the major factors limiting the long-term function of encapsulated islets is the host's immunological reaction to the transplanted graft which is often manifested as pericapsular fibrotic overgrowth (PFO). PFO forms a barrier on the capsule surface that prevents the ingress of oxygen and nutrients leading to islet cell starvation, hypoxia and death. The mechanism of PFO formation is still not elucidated fully and studies using a pig model have tried to understand the host immune response to empty alginate microcapsules. In this review, the varied strategies to overcome or reduce PFO are discussed, including alginate purification, altering microcapsule geometry, modifying alginate chemical composition, co-encapsulation with immunomodulatory cells, administration of pharmacological agents, and alternative transplantation sites. Nanoencapsulation technologies, such as conformal and layer-by-layer coating technologies, as well as nanofiber, thin-film nanoporous devices, and silicone based NanoGland devices are also addressed. Finally, this review outlines recent progress in imaging technologies to track encapsulated cells, as well as promising perspectives concerning the production of insulin-producing cells from stem cells for encapsulation.

  4. Quarterly Report 11 for the Period October 1978 - December 1978 and Proceedings of the 11th Project Integration Meeting

    None

    1979-10-01

    This report describes progress made by the Low-Cost Solar Array Project during the period October through December 1978. It includes task reports on silicon material processing, large-area silicon sheet development, encapsulation mate3rials testing and development, Project engineering and operations, and manufacturing techniques, plus the steps taken to integrate these efforts. it also includes a report on and copies of viewgraphs presented at the Project Integration Meeting held December 13-14, 1978.

  5. Progress Report 16 for the period April-September 1980, and the proceedings of the 16th Project Integration Meeting

    McDonald, R.R.

    1980-01-01

    Progress made by the Low-Cost Solar Array Project during the period April to September 1980, is reported in detail. Progress on project analysis and integration; technology development in silicon material, large-area silicon sheet and encapsulation; production process and equipment development; engineering, and operations is described. A report on, and copies of visual presentations made at, the Project Integration Meeting held September 24 and 25, 1980 are included.

  6. Temperature and color management of silicon solar cells for building integrated photovoltaic

    Amara, Mohamed; Mandorlo, Fabien; Couderc, Romain; Gerenton, Félix; Lemiti, Mustapha

    2018-01-01

    Color management of integrated photovoltaics must meet two criteria of performance: provide maximum conversion efficiency and allow getting the chosen colors with an appropriate brightness, more particularly when using side by side solar cells of different colors. As the cooling conditions are not necessarily optimal, we need to take into account the influence of the heat transfer and temperature. In this article, we focus on the color space and brightness achieved by varying the antireflective properties of flat silicon solar cells. We demonstrate that taking into account the thermal effects allows freely choosing the color and adapting the brightness with a small impact on the conversion efficiency, except for dark blue solar cells. This behavior is especially true when heat exchange by convection is low. Our optical simulations show that the perceived color, for single layer ARC, is not varying with the position of the observer, whatever the chosen color. The use of a double layer ARC adds flexibility to tune the wanted color since the color space is greatly increased in the green and yellow directions. Last, choosing the accurate material allows both bright colors and high conversion efficiency at the same time.

  7. Joining and Integration of Silicon Nitride Ceramics for Aerospace and Energy Systems

    Singh, M.; Asthana, R.

    2009-01-01

    Light-weight, creep-resistant silicon nitride ceramics possess excellent high-temperature strength and are projected to significantly raise engine efficiency and performance when used as turbine components in the next-generation turbo-shaft engines without the extensive cooling that is needed for metallic parts. One key aspect of Si3N4 utilization in such applications is its joining response to diverse materials. In an ongoing research program, the joining and integration of Si3N4 ceramics with metallic, ceramic, and composite materials using braze interlayers with the liquidus temperature in the range 750-1240C is being explored. In this paper, the self-joining behavior of Kyocera Si3N4 and St. Gobain Si3N4 using a ductile Cu-based active braze (Cu-ABA) containing Ti will be presented. Joint microstructure, composition, hardness, and strength as revealed by optical microscopy, scanning electron microscopy (SEM), energy dispersive spectroscopy (EDS), Knoop microhardness test, and offset compression shear test will be presented. Additionally, microstructure, composition, and joint strength of Si3N4/Inconel 625 joints made using Cu-ABA, will be presented. The results will be discussed with reference to the role of chemical reactions, wetting behavior, and residual stresses in joints.

  8. Prolonged silicon carbide integrated circuit operation in Venus surface atmospheric conditions

    Philip G. Neudeck

    2016-12-01

    Full Text Available The prolonged operation of semiconductor integrated circuits (ICs needed for long-duration exploration of the surface of Venus has proven insurmountably challenging to date due to the ∼ 460 °C, ∼ 9.4 MPa caustic environment. Past and planned Venus landers have been limited to a few hours of surface operation, even when IC electronics needed for basic lander operation are protected with heavily cumbersome pressure vessels and cooling measures. Here we demonstrate vastly longer (weeks electrical operation of two silicon carbide (4H-SiC junction field effect transistor (JFET ring oscillator ICs tested with chips directly exposed (no cooling and no protective chip packaging to a high-fidelity physical and chemical reproduction of Venus’ surface atmosphere. This represents more than 100-fold extension of demonstrated Venus environment electronics durability. With further technology maturation, such SiC IC electronics could drastically improve Venus lander designs and mission concepts, fundamentally enabling long-duration enhanced missions to the surface of Venus.

  9. Neuron Stimulation Device Integrated with Silicon Nanowire-Based Photodetection Circuit on a Flexible Substrate

    Suk Won Jung

    2016-12-01

    Full Text Available This paper proposes a neural stimulation device integrated with a silicon nanowire (SiNW-based photodetection circuit for the activation of neurons with light. The proposed device is comprised of a voltage divider and a current driver in which SiNWs are used as photodetector and field-effect transistors; it has the functions of detecting light, generating a stimulation signal in proportion to the light intensity, and transmitting the signal to a micro electrode. To show the applicability of the proposed neural stimulation device as a high-resolution retinal prosthesis system, a high-density neural stimulation device with a unit cell size of 110 × 110 μ m and a resolution of 32 × 32 was fabricated on a flexible film with a thickness of approximately 50 μm. Its effectiveness as a retinal stimulation device was then evaluated using a unit cell in an in vitro animal experiment involving the retinal tissue of retinal Degeneration 1 (rd1 mice. Experiments wherein stimulation pulses were applied to the retinal tissues successfully demonstrate that the number of spikes in neural response signals increases in proportion to light intensity.

  10. Hydrogenated Amorphous Silicon Sensor Deposited on Integrated Circuit for Radiation Detection

    Despeisse, M; Jarron, P; Kaplon, J; Moraes, D; Nardulli, A; Powolny, F; Wyrsch, N

    2008-01-01

    Radiation detectors based on the deposition of a 10 to 30 mum thick hydrogenated amorphous silicon (a-Si:H) sensor directly on top of integrated circuits have been developed. The performance of this detector technology has been assessed for the first time in the context of particle detectors. Three different circuits were designed in a quarter micron CMOS technology for these studies. The so-called TFA (Thin-Film on ASIC) detectors obtained after deposition of a-Si:H sensors on the developed circuits are presented. High internal electric fields (104 to 105 V/cm) can be built in the a-Si:H sensor and overcome the low mobility of electrons and holes in this amorphous material. However, the deposited sensor's leakage current at such fields turns out to be an important parameter which limits the performance of a TFA detector. Its detailed study is presented as well as the detector's pixel segmentation. Signal induction by generated free carrier motion in the a-Si:H sensor has been characterized using a 660 nm pul...

  11. Temperature and color management of silicon solar cells for building integrated photovoltaic

    Amara Mohamed

    2018-01-01

    Full Text Available Color management of integrated photovoltaics must meet two criteria of performance: provide maximum conversion efficiency and allow getting the chosen colors with an appropriate brightness, more particularly when using side by side solar cells of different colors. As the cooling conditions are not necessarily optimal, we need to take into account the influence of the heat transfer and temperature. In this article, we focus on the color space and brightness achieved by varying the antireflective properties of flat silicon solar cells. We demonstrate that taking into account the thermal effects allows freely choosing the color and adapting the brightness with a small impact on the conversion efficiency, except for dark blue solar cells. This behavior is especially true when heat exchange by convection is low. Our optical simulations show that the perceived color, for single layer ARC, is not varying with the position of the observer, whatever the chosen color. The use of a double layer ARC adds flexibility to tune the wanted color since the color space is greatly increased in the green and yellow directions. Last, choosing the accurate material allows both bright colors and high conversion efficiency at the same time.

  12. Study and characterization of an integrated circuit-deposited hydrogenated amorphous silicon sensor for the detection of particles and radiations

    Despeisse, M.

    2006-03-01

    Next generation experiments at the European laboratory of particle physics (CERN) require particle detector alternatives to actual silicon detectors. This thesis presents a novel detector technology, which is based on the deposition of a hydrogenated amorphous silicon sensor on top of an integrated circuit. Performance and limitations of this technology have been assessed for the first time in this thesis in the context of particle detectors. Specific integrated circuits have been designed and the detector segmentation, the interface sensor-chip and the sensor leakage current have been studied in details. The signal induced by the track of an ionizing particle in the sensor has been characterized and results on the signal speed, amplitude and on the sensor resistance to radiation are presented. The results are promising regarding the use of this novel technology for radiation detection, though limitations have been shown for particle physics application. (author)

  13. Analysis of silicon-based integrated photovoltaic-electrochemical hydrogen generation system under varying temperature and illumination

    Vishwa Bhatt; Brijesh Tripathi; Pankaj Yadav; Manoj Kumar

    2017-01-01

    Last decade witnessed tremendous research and development in the area of photo-electrolytic hydrogen generation using chemically stable nanostructured photo-cathode/anode materials.Due to intimately coupled charge separation and photo-catalytic processes,it is very difficult to optimize individual components of such system leading to a very low demonstrated solar-to-fuel efficiency (SFE) of less than 1%.Recently there has been growing interest in an integrated photovoltaic-electrochemical (PV-EC) system based on GaAs solar cells with the demonstrated SFE of 24.5% under concentrated illumination condition.But a high cost of GaAs based solar cells and recent price drop of poly-crystalline silicon (pc-Si) solar cells motivated researchers to explore silicon based integrated PV-EC system.In this paper a theoretical framework is introduced to model silicon-based integrated PV-EC device.The theoretical framework is used to analyze the coupling and kinetic losses of a silicon solar cell based integrated PV-EC water splitting system under varying temperature and illumination.The kinetic loss occurs in the range of 19.1%-27.9% and coupling loss takes place in the range of 5.45%-6.74% with respect to varying illumination in the range of 20-100 mW/cm2.Similarly,the effect of varying temperature has severe impact on the performance of the system,wherein the coupling loss occurs in the range of 0.84%-21.51% for the temperature variation from 25 to 50 ℃.

  14. Effect of preliminary annealing of silicon substrates on the spectral sensitivity of photodetectors in bipolar integrated circuits

    Blynskij, V.I.; Bozhatkin, O.A.; Golub, E.S.; Lemeshevskaya, A.M.; Shvedov, S.V.

    2010-01-01

    We examine the results of an effect of preliminary annealing on the spectral sensitivity of photodetectors in bipolar integrated circuits, formed in silicon grown by the Czochralski method. We demonstrate the possibility of substantially improving the sensitivity of photodetectors in the infrared region of the spectrum with twostep annealing. The observed effect is explained by participation of oxidation in the gettering process, where oxidation precedes formation of a buried n + layer in the substrate. (authors)

  15. Integrated circuits of silicon on insulator S.O.I. technologies: State of the art and perspectives

    Leray, J.L.; Dupont-Nivet, E.; Raffaelli, M.; Coic, Y.M.; Musseau, O.; Pere, J.F.; Lalande, P.; Bredy, J.; Auberton-Herve, A.J.; Bruel, M.; Giffard, B.

    1989-01-01

    Silicon On Insulator technologies have been proposed to increase the integrated circuits performances in radiation operation. Active researches are conducted, in France and abroad. This paper reviews briefly radiation effects phenomenology in that particular type of structure S.O.I. New results are presented that show very good radiation behaviour in term of speed, dose (10 to 100 megarad (Si)), dose rate and S.E.U. performances [fr

  16. FEM Simulation of Influence of Protective Encapsulation on MEMS Pressure Sensor

    Yao, Qingshan; Janting, Jakob; Branebjerg, Jens

    2003-01-01

    The objective of the work is to evaluate the feasibility of packaging a MEMS silicon pressure sensor by using either a polymer encapsulation or a combination of a polymer encapsulation and a metallic protection Membrane (fig. 1). The potential application of the protected sensor is for harsh...... environments. Several steps of simulation are carried out:1) Comparisons of the sensitivities are made among the non-encapsulated silicon sensor, the polymer encapsulated and polymer with metal encapsulated sensor. This is for evaluating whether the encapsulating materials reduce the pressure sensitivity...... whether the metallic membrane / coating will peel off when applying the maximum pressure, which is 4000 bar leading to high shear stress between the metallic membrane and the polymer encapsulation material.3) Thermal calculations are made to evaluate the influence of the environment on the packaged sensor...

  17. A thermal model for amorphous silicon photovoltaic integrated in ETFE cushion roofs

    Zhao, Bing; Chen, Wujun; Hu, Jianhui; Qiu, Zhenyu; Qu, Yegao; Ge, Binbin

    2015-01-01

    Highlights: • A thermal model is proposed to estimate temperature of a-Si PV integrated in ETFE cushion. • Nonlinear equation is solved by Runge–Kutta method integrated in a new program. • Temperature profiles varying with weather conditions are obtained and analyzed. • Numerical results are in good line with experimental results with coefficients of 0.821–0.985. • Reasons for temperature difference of 0.9–4.6 K are solar irradiance and varying parameters. - Abstract: Temperature characteristics of amorphous silicon photovoltaic (a-Si PV) integrated in building roofs (e.g. the ETFE cushions) are indispensible for evaluating the thermal performances of a-Si PV and buildings. To investigate the temperature characteristics and temperature value, field experiments and numerical modeling were performed and compared in this paper. An experimental mock-up composed of a-Si PV and a three-layer ETFE cushion structure was constructed and experiments were carried out under four typical weather conditions (winter sunny, winter cloudy, summer sunny and summer cloudy). The measured solar irradiance and air temperature were used as the real weather conditions for the thermal model. On the other side, a theoretical thermal model was developed based on energy balance equation which was expressed as that absorbed energy was equal to converted energy and energy loss. The corresponding differential equation of PV temperature varying with weather conditions was solved by the Runge–Kutta method. The comparisons between the experimental and numerical results were focusing on the temperature characteristics and temperature value. For the temperature characteristics, good agreement was obtained by correlation analysis with the coefficients of 0.821–0.985, which validated the feasibility of the thermal model. For the temperature value, the temperature difference between the experimental and numerical results was only 0.9–4.6 K and the reasons could be the dramatical

  18. The thermal neutron absorption cross-sections, resonance integrals and resonance parameters of silicon and its stable isotopes

    Story, J.S.

    1969-09-01

    The data available up to the end of November 1968 on the thermal neutron absorption cross-sections, resonance absorption integrals, and resonance parameters of silicon and its stable isotopes are collected and discussed. Estimates are given of the mean spacing of the energy levels of the compound nuclei near the neutron binding energy. It is concluded that the thermal neutron absorption cross-section and resonance absorption integral of natural silicon are not well established. The data on these two parameters are somewhat correlated, and three different assessments of the resonance integral are presented which differ over-all by a factor of 230. Many resonances have been detected by charged particle reactions which have not yet been observed in neutron cross-section measurements. One of these resonances of Si 2 8, at E n = 4 ± 5 keV might account for the large resonance integral which is derived, very uncertainly, from integral data. The principal source of the measured resonance integral of Si 3 0 has not yet been located. The thermal neutron absorption cross-section of Si 2 8 appears to result mainly from a negative energy resonance, possibly the resonance at E n = - 59 ± 5 keV detected by the Si 2 8 (d,p) reaction. (author)

  19. First operation of a hybrid photon detector prototype with electrostatic cross-focussing and integrated silicon pixel readout

    Alemi, M.; Campbell, M.; Gys, T.; Mikulec, B.; Piedigrossi, D.; Puertolas, D.; Rosso, E.; Schomaker, R.; Snoeys, W.; Wyllie, K.

    2000-01-01

    We report on the first operation of a hybrid photon detector prototype with integrated silicon pixel readout for the ring imaging Cherenkov detectors of the LHCb experiment. The photon detector is based on a cross-focussed image intensifier tube geometry where the image is de-magnified by a factor of 4. The anode consists of a silicon pixel array, bump-bonded to a binary readout chip with matching pixel electronics. The prototype has been characterized using a low-intensity light-emitting diode operated in pulsed mode. Its performance in terms of single-photoelectron detection efficiency and imaging properties is presented. A model of photoelectron detection is proposed, and is shown to be in good agreement with the experimental data. It includes an estimate of the charge signal generated in the silicon detector, and the combined effects of the comparator threshold spread of the pixel readout chip, charge sharing at the pixel boundaries and back-scattering of the photoelectrons at the silicon detector surface

  20. First operation of a hybrid photon detector prototype with electrostatic cross-focussing and integrated silicon pixel readout

    Alemi, M.; Campbell, M.; Gys, T. E-mail: thierry.gys@cern.ch; Mikulec, B.; Piedigrossi, D.; Puertolas, D.; Rosso, E.; Schomaker, R.; Snoeys, W.; Wyllie, K

    2000-07-11

    We report on the first operation of a hybrid photon detector prototype with integrated silicon pixel readout for the ring imaging Cherenkov detectors of the LHCb experiment. The photon detector is based on a cross-focussed image intensifier tube geometry where the image is de-magnified by a factor of 4. The anode consists of a silicon pixel array, bump-bonded to a binary readout chip with matching pixel electronics. The prototype has been characterized using a low-intensity light-emitting diode operated in pulsed mode. Its performance in terms of single-photoelectron detection efficiency and imaging properties is presented. A model of photoelectron detection is proposed, and is shown to be in good agreement with the experimental data. It includes an estimate of the charge signal generated in the silicon detector, and the combined effects of the comparator threshold spread of the pixel readout chip, charge sharing at the pixel boundaries and back-scattering of the photoelectrons at the silicon detector surface.

  1. Development of deep silicon plasma etching for 3D integration technology

    Golishnikov А. А.

    2014-02-01

    Full Text Available Plasma etch process for thought-silicon via (TSV formation is one of the most important technological operations in the field of metal connections creation between stacked circuits in 3D assemble technology. TSV formation strongly depends on parameters such as Si-wafer thickness, aspect ratio, type of metallization material, etc. The authors investigate deep silicon plasma etch process for formation of TSV with controllable profile. The influence of process parameters on plasma etch rate, silicon etch selectivity to photoresist and the structure profile are researched in this paper. Technology with etch and passivation steps alternation was used as a method of deep silicon plasma etching. Experimental tool «Platrane-100» with high-density plasma reactor based on high-frequency ion source with transformer coupled plasma was used for deep silicon plasma etching. As actuation gases for deep silicon etching were chosen the following gases: SF6 was used for the etch stage and CHF3 was applied on the polymerization stage. As a result of research, the deep plasma etch process has been developed with the following parameters: silicon etch rate 6 µm/min, selectivity to photoresist 60 and structure profile 90±2°. This process provides formation of TSV 370 µm deep and about 120 µm in diameter.

  2. From a single encapsulated detector to the spectrometer for INTEGRAL satellite: predicting the peak-to-total ratio at high γ-energies

    Kshetri, R

    2012-01-01

    In two recent papers (R. Kshetri, JINST 2012 7 P04008; ibid., P07006), a probabilistic formalism was introduced to predict the response of encapsulated type composite germanium detectors like the SPI (spectrometer for INTEGRAL satellite). Predictions for the peak-to-total and peak-to-background ratios are given at 1.3 MeV for the addback mode of operation. The application of the formalism to clover germanium detector is discussed in two separate papers (R. Kshetri, JINST 2012 7 P07008; ibid., P08015). Using the basic approach developed in those papers, for the first time we present a procedure for calculating the peak-to-total ratio of the cluster detector for γ-energies up to 8 MeV. Results are shown for both bare and suppressed detectors as well as for the single crystal and addback modes of operation. We have considered the experimental data of (i) peak-to-total ratio at 1.3 MeV, and (ii) single detector efficiency and addback factor for other energies up to 8 MeV. Using this data, an approximate method of calculating the peak-to-total ratio of other composite detectors, is shown. Experimental validation of our approach (for energies up to 8 MeV) has been confirmed considering the data of the SPI spectrometer. We have discussed about comparisons between various modes of operation and suppression cases. The present paper is the fifth in the series of papers on composite germanium detectors and for the first time discusses about the change in fold distribution and peak-to-total ratio for sophisticated detectors consisting of several modules of miniball, cluster and SPI detectors. Our work could provide a guidance in designing new composite detectors and in performing experimental studies with the existing detectors for high energy gamma-rays.

  3. From a single encapsulated detector to the spectrometer for INTEGRAL satellite: predicting the peak-to-total ratio at high γ-energies

    Kshetri, R.

    2012-12-01

    In two recent papers (R. Kshetri, JINST 2012 7 P04008; ibid., P07006), a probabilistic formalism was introduced to predict the response of encapsulated type composite germanium detectors like the SPI (spectrometer for INTEGRAL satellite). Predictions for the peak-to-total and peak-to-background ratios are given at 1.3 MeV for the addback mode of operation. The application of the formalism to clover germanium detector is discussed in two separate papers (R. Kshetri, JINST 2012 7 P07008; ibid., P08015). Using the basic approach developed in those papers, for the first time we present a procedure for calculating the peak-to-total ratio of the cluster detector for γ-energies up to 8 MeV. Results are shown for both bare and suppressed detectors as well as for the single crystal and addback modes of operation. We have considered the experimental data of (i) peak-to-total ratio at 1.3 MeV, and (ii) single detector efficiency and addback factor for other energies up to 8 MeV. Using this data, an approximate method of calculating the peak-to-total ratio of other composite detectors, is shown. Experimental validation of our approach (for energies up to 8 MeV) has been confirmed considering the data of the SPI spectrometer. We have discussed about comparisons between various modes of operation and suppression cases. The present paper is the fifth in the series of papers on composite germanium detectors and for the first time discusses about the change in fold distribution and peak-to-total ratio for sophisticated detectors consisting of several modules of miniball, cluster and SPI detectors. Our work could provide a guidance in designing new composite detectors and in performing experimental studies with the existing detectors for high energy gamma-rays.

  4. Integration of a silicon-based microprobe into a gear measuring instrument for accurate measurement of micro gears

    Ferreira, N; Krah, T; Jeong, D C; Kniel, K; Härtig, F; Metz, D; Dietzel, A; Büttgenbach, S

    2014-01-01

    The integration of silicon micro probing systems into conventional gear measuring instruments (GMIs) allows fully automated measurements of external involute micro spur gears of normal modules smaller than 1 mm. This system, based on a silicon microprobe, has been developed and manufactured at the Institute for Microtechnology of the Technische Universität Braunschweig. The microprobe consists of a silicon sensor element and a stylus which is oriented perpendicularly to the sensor. The sensor is fabricated by means of silicon bulk micromachining. Its small dimensions of 6.5 mm × 6.5 mm allow compact mounting in a cartridge to facilitate the integration into a GMI. In this way, tactile measurements of 3D microstructures can be realized. To enable three-dimensional measurements with marginal forces, four Wheatstone bridges are built with diffused piezoresistors on the membrane of the sensor. On the reverse of the membrane, the stylus is glued perpendicularly to the sensor on a boss to transmit the probing forces to the sensor element during measurements. Sphere diameters smaller than 300 µm and shaft lengths of 5 mm as well as measurement forces from 10 µN enable the measurements of 3D microstructures. Such micro probing systems can be integrated into universal coordinate measuring machines and also into GMIs to extend their field of application. Practical measurements were carried out at the Physikalisch-Technische Bundesanstalt by qualifying the microprobes on a calibrated reference sphere to determine their sensitivity and their physical dimensions in volume. Following that, profile and helix measurements were carried out on a gear measurement standard with a module of 1 mm. The comparison of the measurements shows good agreement between the measurement values and the calibrated values. This result is a promising basis for the realization of smaller probe diameters for the tactile measurement of micro gears with smaller modules. (paper)

  5. Encapsulation by Janus spheroids

    Li, Wei; Liu, Ya; Brett, Genevieve; Gunton, James D.

    2011-01-01

    The micro/nano encapsulation technology has acquired considerable attention in the fields of drug delivery, biomaterial engineering, and materials science. Based on recent advances in chemical particle synthesis, we propose a primitive model of an encapsulation system produced by the self-assembly of Janus oblate spheroids, particles with oblate spheroidal bodies and two hemi-surfaces coded with dissimilar chemical properties. Using Monte Carlo simulation, we investigate the encapsulation sys...

  6. Impurity engineering for germanium-doped Czochralski silicon wafer used for ultra large scale integrated circuit

    Chen, Jiahe; Yang, Deren [State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou (China)

    2009-07-01

    Internal gettering (IG) technology has been challenged by both the reduction of thermal budget during device fabrication and the enlargement of wafer diameter. Improving the properties of Czochralski (Cz) silicon wafers by intentional impurity doping, the so-called 'impurity engineering (IE)', is defined. Germanium has been found to be one of the important impurities for improving the internal gettering effect in Cz silicon wafer. In this paper, the investigations on IE involved with the conventional furnace anneal based denudation processing for germanium-doped Cz silicon wafer are reviewed. Meanwhile, the potential mechanisms of germanium effects for the IE of Cz silicon wafer are also interpreted based on the experimental facts. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  7. Integrating Soil Silicon Amendment into Management Programs for Insect Pests of Drill-Seeded Rice.

    Villegas, James M; Way, Michael O; Pearson, Rebecca A; Stout, Michael J

    2017-08-13

    Silicon soil amendment has been shown to enhance plant defenses against insect pests. Rice is a silicon-accumulating graminaceous plant. In the southern United States, the rice water weevil and stem borers are important pests of rice. Current management tactics for these pests rely heavily on the use of insecticides. This study evaluated the effects of silicon amendment when combined with current management tactics for these rice insect pests in the field. Field experiments were conducted from 2013 to 2015. Rice was drill-planted in plots subjected to factorial combinations of variety (conventional and hybrid), chlorantraniliprole seed treatment (treated and untreated), and silicon amendment (treated and untreated). Silicon amendment reduced densities of weevil larvae on a single sampling date in 2014, but did not affect densities of whiteheads caused by stem borers. In contrast, insecticidal seed treatment strongly reduced densities of both weevil larvae and whiteheads. Higher densities of weevil larvae were also observed in the hybrid variety in 2014, while higher incidences of whiteheads were observed in the conventional variety in 2014 and 2015. Silicon amendment improved rice yields, as did chlorantraniliprole seed treatment and use of the hybrid variety.

  8. Sol-gel method for encapsulating molecules

    Brinker, C. Jeffrey; Ashley, Carol S.; Bhatia, Rimple; Singh, Anup K.

    2002-01-01

    A method for encapsulating organic molecules, and in particular, biomolecules using sol-gel chemistry. A silica sol is prepared from an aqueous alkali metal silicate solution, such as a mixture of silicon dioxide and sodium or potassium oxide in water. The pH is adjusted to a suitably low value to stabilize the sol by minimizing the rate of siloxane condensation, thereby allowing storage stability of the sol prior to gelation. The organic molecules, generally in solution, is then added with the organic molecules being encapsulated in the sol matrix. After aging, either a thin film can be prepared or a gel can be formed with the encapsulated molecules. Depending upon the acid used, pH, and other processing conditions, the gelation time can be from one minute up to several days. In the method of the present invention, no alcohols are generated as by-products during the sol-gel and encapsulation steps. The organic molecules can be added at any desired pH value, where the pH value is generally chosen to achieve the desired reactivity of the organic molecules. The method of the present invention thereby presents a sufficiently mild encapsulation method to retain a significant portion of the activity of the biomolecules, compared with the activity of the biomolecules in free solution.

  9. Encapsulation plant at Forsmark

    Nystroem, Anders

    2007-08-01

    SKB has already carried out a preliminary study of an encapsulation plant detached from Clab (Central interim storage for spent fuels). This stand-alone encapsulation plant was named FRINK and its assumed siting was the above-ground portion of the final repository, irrespective of the repository's location. The report previously presented was produced in cooperation with BNFL Engineering Ltd in Manchester and the fuel reception technical solution was examined by Gesellschaft fuer Nuklear-Service mbH (GNS) in Hannover and by Societe Generale pour les Techniques Nouvelles (SGN) in Paris. This report is an update of the earlier preliminary study report and is based on the assumption that the encapsulation plant and also the final repository will be sited in the Forsmark area. SKB's main alternative for siting the encapsulation plant is next to Clab. Planning of this facility is ongoing and technical solutions from the planning work have been incorporated in this report. An encapsulation plant placed in proximity to any final repository in Forsmark forms part of the alternative presentation in the application for permission to construct and operate an installation at Clab. The main technical difference between the planned encapsulation plant at Clab and an encapsulation plant at a final repository at Forsmark is how the fuel is managed and prepared before actual encapsulation. Fuel reception at the encapsulation plant in Forsmark would be dry, i.e. there would be no water-filled pools at the facility. Clab is used for verificatory fuel measurements, sorting and drying of the fuel before transport to Forsmark. This means that Clab will require a measure of rebuilding and supplementary equipment. In purely technical terms, the prospects for building an encapsulation plant sited at Forsmark are good. A description of the advantages and drawbacks of siting the encapsulation plant at Clab as opposed to any final repository at Forsmark is presented in a separate report

  10. Encapsulation plant at Forsmark

    Nystroem, Anders

    2007-08-15

    SKB has already carried out a preliminary study of an encapsulation plant detached from Clab (Central interim storage for spent fuels). This stand-alone encapsulation plant was named FRINK and its assumed siting was the above-ground portion of the final repository, irrespective of the repository's location. The report previously presented was produced in cooperation with BNFL Engineering Ltd in Manchester and the fuel reception technical solution was examined by Gesellschaft fuer Nuklear-Service mbH (GNS) in Hannover and by Societe Generale pour les Techniques Nouvelles (SGN) in Paris. This report is an update of the earlier preliminary study report and is based on the assumption that the encapsulation plant and also the final repository will be sited in the Forsmark area. SKB's main alternative for siting the encapsulation plant is next to Clab. Planning of this facility is ongoing and technical solutions from the planning work have been incorporated in this report. An encapsulation plant placed in proximity to any final repository in Forsmark forms part of the alternative presentation in the application for permission to construct and operate an installation at Clab. The main technical difference between the planned encapsulation plant at Clab and an encapsulation plant at a final repository at Forsmark is how the fuel is managed and prepared before actual encapsulation. Fuel reception at the encapsulation plant in Forsmark would be dry, i.e. there would be no water-filled pools at the facility. Clab is used for verificatory fuel measurements, sorting and drying of the fuel before transport to Forsmark. This means that Clab will require a measure of rebuilding and supplementary equipment. In purely technical terms, the prospects for building an encapsulation plant sited at Forsmark are good. A description of the advantages and drawbacks of siting the encapsulation plant at Clab as opposed to any final repository at Forsmark is presented in a separate

  11. Invited Article: Electrically tunable silicon-based on-chip microdisk resonator for integrated microwave photonic applications

    Weifeng Zhang

    2016-11-01

    Full Text Available Silicon photonics with advantages of small footprint, compatibility with the mature CMOS fabrication technology, and its potential for seamless integration with electronics is making a significant difference in realizing on-chip integration of photonic systems. A microdisk resonator (MDR with a strong capacity in trapping and storing photons is a versatile element in photonic integrated circuits. Thanks to the large index contrast, a silicon-based MDR with an ultra-compact footprint has a great potential for large-scale and high-density integrations. However, the existence of multiple whispering gallery modes (WGMs and resonance splitting in an MDR imposes inherent limitations on its widespread applications. In addition, the waveguide structure of an MDR is incompatible with that of a lateral PN junction, which leads to the deprivation of its electrical tunability. To circumvent these limitations, in this paper we propose a novel design of a silicon-based MDR by introducing a specifically designed slab waveguide to surround the disk and the lateral sides of the bus waveguide to suppress higher-order WGMs and to support the incorporation of a lateral PN junction for electrical tunability. An MDR based on the proposed design is fabricated and its optical performance is evaluated. The fabricated MDR exhibits single-mode operation with a free spectral range of 28.85 nm. Its electrical tunability is also demonstrated and an electro-optic frequency response with a 3-dB modulation bandwidth of ∼30.5 GHz is measured. The use of the fabricated MDR for the implementation of an electrically tunable optical delay-line and a tunable fractional-order temporal photonic differentiator is demonstrated.

  12. Safely re-integrating silicone breast implants into the plastic surgery practice.

    Gladfelter, Joanne

    2006-01-01

    In the early 1990s, it was reported that silicone breast implants were possibly responsible for serious damage to women's health. In January 1992, the Food and Drug Administration issued a voluntary breast implant moratorium and, in April, issued a ban on the use of silicone gel-filled implants for cosmetic breast augmentation. Since that time, silicone gel-filled breast implants have been available to women only for select cases: women seeking breast reconstruction or revision of an existing breast implant, women who have had breast cancer surgery, a severe injury to the breast, a birth defect that affects the breast, or a medical condition causing a severe breast deformity. Since the ban on the use of silicone gel-filled breast implants for cosmetic breast augmentation, numerous scientific studies have been conducted. To ensure patient safety, the American Board of Plastic Surgery believes that these scientific studies and the Food and Drug Administration's scrutiny of silicone gel-filled breast implants have been appropriate and necessary.

  13. Integral procedure to assess crack filling and mechanical contribution of polymer-based healing agent in encapsulation-based self-healing concrete

    Gilabert Villegas, Francisco Antonio; Van Tittelboom, Kim; Van Stappen, J.; Cnudde, Veerle; De Belie, Nele; Van Paepegem, Wim

    2017-01-01

    This work presents an experimental and numerical study to analyze the crack filling process in encapsulation-based self-healing concrete. A specimen consisting of two small concrete blocks has been designed containing capsules filled with a polyurethane-based healing agent. This design enables to

  14. Silicon Microspheres Photonics

    Serpenguzel, A.

    2008-01-01

    Electrophotonic integrated circuits (EPICs), or alternatively, optoelectronic integrated circuit (OEICs) are the natural evolution of the microelectronic integrated circuit (IC) with the addition of photonic capabilities. Traditionally, the IC industry has been based on group IV silicon, whereas the photonics industry on group III-V semiconductors. However, silicon based photonic microdevices have been making strands in siliconizing photonics. Silicon microspheres with their high quality factor whispering gallery modes (WGMs), are ideal candidates for wavelength division multiplexing (WDM) applications in the standard near-infrared communication bands. In this work, we will discuss the possibility of using silicon microspheres for photonics applications in the near-infrared

  15. Band structure properties of (BGa)P semiconductors for lattice matched integration on (001) silicon

    Hossain, Nadir; Sweeney, Stephen [Advanced Technology Institute and Department of Physics, University of Surrey, Guildford, Surrey GU2 7XH (United Kingdom); Hosea, Jeff [Advanced Technology Institute and Department of Physics, University of Surrey, Guildford, Surrey GU2 7XH, UK and Ibnu Sina Institute for Fundamental Science Studies, Universiti Teknologi Malaysia, Johor Bahru 81310 (Malaysia); Liebich, Sven; Zimprich, Martin; Volz, Kerstin; Stolz, Wolfgang [Material Sciences Center and Faculty of Physics, Philipps-University, 35032 Marburg (Germany); Kunert, Bernerdette [NAsP III/V GmbH, Am Knechtacker 19, 35041 Marburg (Germany)

    2013-12-04

    We report the band structure properties of (BGa)P layers grown on silicon substrate using metal-organic vapour-phase epitaxy. Using surface photo-voltage spectroscopy we find that both the direct and indirect band gaps of (BGa)P alloys (strained and unstrained) decrease with Boron content. Our experimental results suggest that the band gap of (BGa)P layers up to 6% Boron is large and suitable to be used as cladding and contact layers in GaP-based quantum well heterostructures on silicon substrates.

  16. Silicon-integrated thin-film structure for electro-optic applications

    McKee, Rodney A.; Walker, Frederick Joseph

    2000-01-01

    A crystalline thin-film structure suited for use in any of an number of electro-optic applications, such as a phase modulator or a component of an interferometer, includes a semiconductor substrate of silicon and a ferroelectric, optically-clear thin film of the perovskite BaTiO.sub.3 overlying the surface of the silicon substrate. The BaTiO.sub.3 thin film is characterized in that substantially all of the dipole moments associated with the ferroelectric film are arranged substantially parallel to the surface of the substrate to enhance the electro-optic qualities of the film.

  17. Performance of integrated retainer rings in silicon micro-turbines with thrust style micro-ball bearings

    Hergert, Robert J; Holmes, Andrew S; Hanrahan, Brendan; Ghodssi, Reza

    2013-01-01

    This work explores the performance of different silicon retainer ring designs when integrated into silicon micro-turbines (SMTs) incorporating thrust style bearings supported on 500 µm diameter steel balls. Experimental performance curves are presented for SMTs with rotor diameters of 5 mm and 10 mm, each with five different retainer designs varying in mechanical rigidity, ball pocket shape and ball complement. It was found that the different retainer designs yielded different performance curves, with the closed pocket designs consistently requiring lower input power for a given rotation speed, and the most rigid retainers giving the best performance overall. Both 5 mm and 10 mm diameter devices have shown repeatable performance at rotation speeds up to and exceeding 20 000 RPM with input power levels below 2 W, and devices were tested for over 2.5 million revolutions without failure. Retainer rings are commonly used in macro-scale bearings to ensure uniform spacing between the rolling elements. The integration of retainers into micro-bearings could lower costs by reducing the number of balls required for stable operation, and also open up the possibility of ‘smart’ bearings with integrated sensors to monitor the bearing status. (paper)

  18. Development and characterisation of silicon photomultipliers with bulk-integrated quench resistors for future applications in particle and astroparticle physics

    Jendrysik, Christian

    2014-01-01

    This thesis deals with the development and characterisation of a novel silicon photomultiplier concept with bulk-integrated quench resistors. The approach allows the realisation of a free entrance window and high fill factors, which leads to an improvement of the detection efficiency. With first prototype productions a proof of concept was possible. A full characterisation provided promising results, in particular with respect to the photon detection efficiency. By customising the simulation tools, a reliable description of the devices was achieved. In addition, conceptual studies of the next device generation demonstrated the possibility of single cell readout, expanding the application range of those detectors to particle tracking.

  19. Micromachined silicon cantilevers with integrated high-frequency magnetoimpedance sensors for simultaneous strain and magnetic field detection

    Buettel, G.; Joppich, J.; Hartmann, U.

    2017-12-01

    Giant magnetoimpedance (GMI) measurements in the high-frequency regime utilizing a coplanar waveguide with an integrated Permalloy multilayer and micromachined on a silicon cantilever are reported. The fabrication process is described in detail. The aspect ratio of the magnetic multilayer in the magnetoresistive and magnetostrictive device was varied. Tensile strain and compressive strain were applied. Vector network analyzer measurements in the range from the skin effect to ferromagnetic resonance confirm the technological potential of GMI-based micro-electro-mechanical devices for strain and magnetic field sensing applications. The strain-impedance gauge factor was quantified by finite element strain calculations and reaches a maximum value of almost 200.

  20. Towards Cost-Effective Crystalline Silicon Based Flexible Solar Cells: Integration Strategy by Rational Design of Materials, Process, and Devices

    Bahabry, Rabab R.

    2017-11-30

    The solar cells market has an annual growth of more than 30 percent over the past 15 years. At the same time, the cost of the solar modules diminished to meet both of the rapid global demand and the technological improvements. In particular for the crystalline silicon solar cells, the workhorse of this technology. The objective of this doctoral thesis is enhancing the efficiency of c-Si solar cells while exploring the cost reduction via innovative techniques. Contact metallization and ultra-flexible wafer based c-Si solar cells are the main areas under investigation. First, Silicon-based solar cells typically utilize screen printed Silver (Ag) metal contacts which affect the optimal electrical performance. To date, metal silicide-based ohmic contacts are occasionally used for the front contact grid lines. In this work, investigation of the microstructure and the electrical characteristics of nickel monosilicide (NiSi) ohmic contacts on the rear side of c-Si solar cells has been carried out. Significant enhancement in the fill factor leading to increasing the total power conversion efficiency is observed. Second, advanced classes of modern application require a new generation of versatile solar cells showcasing extreme mechanical resilience. However, silicon is a brittle material with a fracture strains <1%. Highly flexible Si-based solar cells are available in the form thin films which seem to be disadvantageous over thick Si solar cells due to the reduction of the optical absorption with less active Si material. Here, a complementary metal oxide semiconductor (CMOS) technology based integration strategy is designed where corrugation architecture to enable an ultra-flexible solar cell module from bulk mono-crystalline silicon solar wafer with 17% efficiency. This periodic corrugated array benefits from an interchangeable solar cell segmentation scheme which preserves the active silicon thickness and achieves flexibility via interdigitated back contacts. These cells

  1. Study of harsh environment operation of flexible ferroelectric memory integrated with PZT and silicon fabric

    Ghoneim, Mohamed T.; Hussain, Muhammad Mustafa

    2015-01-01

    mono-crystalline silicon (100). The experimented devices show a bending radius down to 1.25 cm corresponding to 0.16% nominal strain (high pressure of ∼260 MPa), and full functionality up to 225 °C high temperature in ambient gas composition (21% oxygen

  2. Monolithic integration of detectors and transistors on high-resistivity silicon

    Dalla Betta, Gian-Franco; Batignani, Giovanni; Boscardin, Maurizio; Bosisio, Luciano; Gregori, Paolo; Pancheri, Lucio; Piemonte, Claudio; Ratti, Lodovico; Verzellesi, Giovanni; Zorzi, Nicola

    2007-01-01

    We report on the most recent results from an R and D activity aimed at the development of silicon radiation detectors with embedded front-end electronics. The key features of the fabrication technology and the available active devices are described. Selected results from the characterization of transistors and test structures are presented and discussed, and the considered application fields are addressed

  3. A low power bipolar amplifier integrated circuit for the ZEUS silicon strip system

    Barberis, E. (Inst. for Particle Physics, Univ. of California, Santa Cruz, CA (United States)); Cartiglia, N. (Inst. for Particle Physics, Univ. of California, Santa Cruz, CA (United States)); Dorfan, D.E. (Inst. for Particle Physics, Univ. of California, Santa Cruz, CA (United States)); Spencer, E. (Inst. for Particle Physics, Univ. of California, Santa Cruz, CA (United States))

    1993-05-01

    A fast low power bipolar chip consisting of 64 amplifier-comparators has been developed for use with silicon strip detectors for systems where high radiation levels and high occupancy considerations are important. The design is described and test results are presented. (orig.)

  4. Plasma enhanced chemical vapor deposition silicon oxynitride optimized for application in integrated optics

    Worhoff, Kerstin; Driessen, A.; Lambeck, Paul; Hilderink, L.T.H.; Linders, Petrus W.C.; Popma, T.J.A.

    1999-01-01

    Silicon Oxynitride layers are grown from SiH4/N2, NH3 and N2O by Plasma Enhanced Chemical Vapor Deposition. The process is optimized with respect to deposition of layers with excellent uniformity in the layer thickness, high homogeneity of the refractive index and good reproducibility of the layer

  5. Silicon diode for measurement of integral neutron dose and method of its production

    Frank, H.; Seda, J.; Trousil, J.

    1978-01-01

    The silicon diode consists of an N or P type silicon plate having a specific resistance exceeding 10 ohm.cm and minority carrier life exceeding 100μs. The plate thickness is a quintuple to a ten-tuple of the diffusion length and the plate consists of layers. Ions of, eg., boron, at a concentration exceeding 10 14 cm -2 are implanted into the P + type silicon layer and a layer of a metal, eg., nickel, is deposited onto it. Ions of eg., phosphorus, at a concentration exceeding 10 14 cm -2 are implanted in the N + type layer and a metal layer, eg., nickel is again depositeJ onto it. Implantation proceeds at an ion acceleration voltage of 10 to 200 kV. Metal layer deposition follows, and simultaneously with annealing of the P + and N + types of silicon layers, the metal layers are annealed at 600 to 900 degC for 1 to 60 minutes with subsequent temperature decrease at a rate less than 10 degC/min, down to a temperature of 300 degC. (J.P.)

  6. Photopolymerizable liquid encapsulants for microelectronic devices

    Baikerikar, Kiran K.

    2000-10-01

    Plastic encapsulated microelectronic devices consist of a silicon chip that is physically attached to a leadframe, electrically interconnected to input-output leads, and molded in a plastic that is in direct contact with the chip, leadframe, and interconnects. The plastic is often referred to as the molding compound, and is used to protect the chip from adverse mechanical, thermal, chemical, and electrical environments. Encapsulation of microelectronic devices is typically accomplished using a transfer molding process in which the molding compound is cured by heat. Most transfer molding processes suffer from significant problems arising from the high operating temperatures and pressures required to fill the mold. These aspects of the current process can lead to thermal stresses, incomplete mold filling, and wire sweep. In this research, a new strategy for encapsulating microelectronic devices using photopolymerizable liquid encapsulants (PLEs) has been investigated. The PLEs consist of an epoxy novolac-based vinyl ester resin (˜25 wt.%), fused silica filler (70--74 wt.%), and a photoinitiator, thermal initiator, and silane coupling agent. For these encapsulants, the use of light, rather than heat, to initiate the polymerization allows precise control over when the reaction starts, and therefore completely decouples the mold filling and the cure. The low viscosity of the PLEs allows for low operating pressures and minimizes problems associated with wire sweep. In addition, the in-mold cure time for the PLEs is equivalent to the in-mold cure times of current transfer molding compounds. In this thesis, the thermal and mechanical properties, as well as the viscosity and adhesion of photopolymerizable liquid encapsulants, are reported in order to demonstrate that a UV-curable formulation can have the material properties necessary for microelectronic encapsulation. In addition, the effects of the illumination time, postcure time, fused silica loading, and the inclusion

  7. Ultra-thin silicon (UTSi) on insulator CMOS transceiver and time-division multiplexed switch chips for smart pixel integration

    Zhang, Liping; Sawchuk, Alexander A.

    2001-12-01

    We describe the design, fabrication and functionality of two different 0.5 micron CMOS optoelectronic integrated circuit (OEIC) chips based on the Peregrine Semiconductor Ultra-Thin Silicon on insulator technology. The Peregrine UTSi silicon- on-sapphire (SOS) technology is a member of the silicon-on- insulator (SOI) family. The low-loss synthetic sapphire substrate is optically transparent and has good thermal conductivity and coefficient of thermal expansion properties, which meet the requirements for flip-chip bonding of VCSELs and other optoelectronic input-output components. One chip contains transceiver and network components, including four channel high-speed CMOS transceiver modules, pseudo-random bit stream (PRBS) generators, a voltage controlled oscillator (VCO) and other test circuits. The transceiver chips can operate in both self-testing mode and networking mode. An on- chip clock and true-single-phase-clock (TSPC) D-flip-flop have been designed to generate a PRBS at over 2.5 Gb/s for the high-speed transceiver arrays to operate in self-testing mode. In the networking mode, an even number of transceiver chips forms a ring network through free-space or fiber ribbon interconnections. The second chip contains four channel optical time-division multiplex (TDM) switches, optical transceiver arrays, an active pixel detector and additional test devices. The eventual applications of these chips will require monolithic OEICs with integrated optical input and output. After fabrication and testing, the CMOS transceiver array dies will be packaged with 850 nm vertical cavity surface emitting lasers (VCSELs), and metal-semiconductor- metal (MSM) or GaAs p-i-n detector die arrays to achieve high- speed optical interconnections. The hybrid technique could be either wire bonding or flip-chip bonding of the CMOS SOS smart-pixel arrays with arrays of VCSELs and photodetectors onto an optoelectronic chip carrier as a multi-chip module (MCM).

  8. Material synthesis for silicon integrated-circuit applications using ion implantation

    Lu, Xiang

    As devices scale down into deep sub-microns, the investment cost and complexity to develop more sophisticated device technologies have increased substantially. There are some alternative potential technologies, such as silicon-on-insulator (SOI) and SiGe alloys, that can help sustain this staggering IC technology growth at a lower cost. Surface SiGe and SiGeC alloys with germanium peak composition up to 16 atomic percent are formed using high-dose ion implantation and subsequent solid phase epitaxial growth. RBS channeling spectra and cross-sectional TEM studies show that high quality SiGe and SiGeC crystals with 8 atomic percent germanium concentration are formed at the silicon surface. Extended defects are formed in SiGe and SiGeC with 16 atomic percent germanium concentration. X-ray diffraction experiments confirm that carbon reduces the lattice strain in SiGe alloys but without significant crystal quality improvement as detected by RBS channeling spectra and XTEM observations. Separation by plasma implantation of oxygen (SPIMOX) is an economical method for SOI wafer fabrication. This process employs plasma immersion ion implantation (PIII) for the implantation of oxygen ions. The implantation rate for Pm is considerably higher than that of conventional implantation. The feasibility of SPIMOX has been demonstrated with successful fabrication of SOI structures implementing this process. Secondary ion mass spectrometry (SIMS) analysis and cross-sectional transmission electron microscopy (XTEM) micrographs of the SPIMOX sample show continuous buried oxide under single crystal overlayer with sharp silicon/oxide interfaces. The operational phase space of implantation condition, oxygen dose and annealing requirement has been identified. Physical mechanisms of hydrogen induced silicon surface layer cleavage have been investigated using a combination of microscopy and hydrogen profiling techniques. The evolution of the silicon cleavage phenomenon is recorded by a series

  9. Encapsulation with structured triglycerides

    Lipids provide excellent materials to encapsulate bioactive compounds for food and pharmaceutical applications. Lipids are renewable, biodegradable, and easily modified to provide additional chemical functionality. The use of structured lipids that have been modified with photoactive properties are ...

  10. Environmentally benign silicon solar cell manufacturing

    Tsuo, Y.S. [National Renewable Energy Lab., Golden, CO (United States); Gee, J.M. [Sandia National Labs., Albuquerque, NM (United States); Menna, P. [National Agency for New Technologies Energy and Environment, Portici (Italy); Strebkov, D.S.; Pinov, A.; Zadde, V. [Intersolarcenter, Moscow (Russian Federation)

    1998-09-01

    The manufacturing of silicon devices--from polysilicon production, crystal growth, ingot slicing, wafer cleaning, device processing, to encapsulation--requires many steps that are energy intensive and use large amounts of water and toxic chemicals. In the past two years, the silicon integrated-circuit (IC) industry has initiated several programs to promote environmentally benign manufacturing, i.e., manufacturing practices that recover, recycle, and reuse materials resources with a minimal consumption of energy. Crystalline-silicon solar photovoltaic (PV) modules, which accounted for 87% of the worldwide module shipments in 1997, are large-area devices with many manufacturing steps similar to those used in the IC industry. Obviously, there are significant opportunities for the PV industry to implement more environmentally benign manufacturing approaches. Such approaches often have the potential for significant cost reduction by reducing energy use and/or the purchase volume of new chemicals and by cutting the amount of used chemicals that must be discarded. This paper will review recent accomplishments of the IC industry initiatives and discuss new processes for environmentally benign silicon solar-cell manufacturing.

  11. Nuclear-waste encapsulation by metal-matrix casting

    Nelson, R.G.; Nesbitt, J.F.; Slate, S.C.

    1981-05-01

    Several encapsulation casting processes are described that were developed or used at the Pacific Northwest Laboratory to embed simulated high-level wastes of two different forms (glass marbles and ceramic pellets) in metal matrices. Preliminary evaluations of these casting processes and the products are presented. Demonstrations have shown that 5- to 10-mm-dia glass marbles can be encapsulated on an engineering scale with lead or lead alloys by gravity or vacuum processes. Marbles approx. 12 mm in dia were successfully encapsulated in a lead alloy on a production scale. Also, 4- to 9-mm-dia ceramic pellets in containers of various sizes were completely penetrated and the individual pellets encased with aluminum-12 wt % silicon alloy by vacuum processes. Indications are that of the casting processes tested, aluminum 12 wt % silicon alloy vacuum-cast around ceramic pellets had the highest degree of infiltration or coverage of pellet surfaces

  12. Integrating a dual-silicon photoelectrochemical cell into a redox flow battery for unassisted photocharging

    Liao, Shichao; Zong, Xu; Seger, Brian

    2016-01-01

    Solar rechargeable flow cells (SRFCs) provide an attractive approach for in situ capture and storage of intermittent solar energy via photoelectrochemical regeneration of discharged redox species for electricity generation. However, overall SFRC performance is restricted by inefficient photoelect......Solar rechargeable flow cells (SRFCs) provide an attractive approach for in situ capture and storage of intermittent solar energy via photoelectrochemical regeneration of discharged redox species for electricity generation. However, overall SFRC performance is restricted by inefficient...... photoelectrochemical reactions. Here we report an efficient SRFC based on a dual-silicon photoelectrochemical cell and a quinone/bromine redox flow battery for in situ solar energy conversion and storage. Using narrow bandgap silicon for efficient photon collection and fast redox couples for rapid interface charge...

  13. Integrating a dual-silicon photoelectrochemical cell into a redox flow battery for unassisted photocharging.

    Liao, Shichao; Zong, Xu; Seger, Brian; Pedersen, Thomas; Yao, Tingting; Ding, Chunmei; Shi, Jingying; Chen, Jian; Li, Can

    2016-05-04

    Solar rechargeable flow cells (SRFCs) provide an attractive approach for in situ capture and storage of intermittent solar energy via photoelectrochemical regeneration of discharged redox species for electricity generation. However, overall SFRC performance is restricted by inefficient photoelectrochemical reactions. Here we report an efficient SRFC based on a dual-silicon photoelectrochemical cell and a quinone/bromine redox flow battery for in situ solar energy conversion and storage. Using narrow bandgap silicon for efficient photon collection and fast redox couples for rapid interface charge injection, our device shows an optimal solar-to-chemical conversion efficiency of ∼5.9% and an overall photon-chemical-electricity energy conversion efficiency of ∼3.2%, which, to our knowledge, outperforms previously reported SRFCs. The proposed SRFC can be self-photocharged to 0.8 V and delivers a discharge capacity of 730 mAh l(-1). Our work may guide future designs for highly efficient solar rechargeable devices.

  14. Design of Elastomer Structure to Facilitate Incorporation of Expanded Graphite in Silicones Without Compromising Electromechanical Integrity

    Hassouneh, Suzan Sager; Daugaard, Anders Egede; Skov, Anne Ladegaard

    2015-01-01

    The development of elastomer materials with a high dielectric permittivity has attracted increased interest over the past years due to their use in, for example, dielectric elastomers. For this particular use, both the electrically insulating properties - as well as the mechanical properties......-functional crosslinker, which allows for development of a suitable network matrix. The dielectric permittivity was increased by almost a factor of 4 compared to a benchmark silicone elastomer....

  15. Micro-fabricated silicon devices for advanced thermal management and integration of particle tracking detectors

    Romagnoli, Giulia; Gambaro, Carla

    Since their first studies targeting the cooling of high-power computing chips, micro-channel devices are proven to provide a very efficient cooling system. In the last years micro-channel cooling has been successfully applied to the cooling of particle detectors at CERN. Thanks to their high thermal efficiency, they can guarantee a good heat sink for the cooling of silicon trackers, fundamental for the reduction of the radiation damage caused by the beam interactions. The radiation damage on the silicon detector is increasing with temperature and furthermore the detectors are producing heat that should be dissipated in the supporting structure. Micro-channels guarantee a distributed and uniform thermal exchange, thanks to the high flexibility of the micro-fabrication process that allows a large variety of channel designs. The thin nature of the micro-channels etched inside silicon wafers, is fulfilling the physics requirement of minimization of the material crossed by the particle beam. Furthermore micro-chan...

  16. High-Performance and Omnidirectional Thin-Film Amorphous Silicon Solar Cell Modules Achieved by 3D Geometry Design.

    Yu, Dongliang; Yin, Min; Lu, Linfeng; Zhang, Hanzhong; Chen, Xiaoyuan; Zhu, Xufei; Che, Jianfei; Li, Dongdong

    2015-11-01

    High-performance thin-film hydrogenated amorphous silicon solar cells are achieved by combining macroscale 3D tubular substrates and nanoscaled 3D cone-like antireflective films. The tubular geometry delivers a series of advantages for large-scale deployment of photovoltaics, such as omnidirectional performance, easier encapsulation, decreased wind resistance, and easy integration with a second device inside the glass tube. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  17. Integrated porous-silicon light-emitting diodes: A fabrication process using graded doping profiles

    Barillaro, G.; Diligenti, A.; Pieri, F.; Fuso, F.; Allegrini, M.

    2001-01-01

    A fabrication process, compatible with an industrial bipolar+complementary metal - oxide - semiconductor (MOS)+diffusion MOS technology, has been developed for the fabrication of efficient porous-silicon-based light-emitting diodes. The electrical contact is fabricated with a double n + /p doping, achieving a high current injection efficiency and thus lower biasing voltages. The anodization is performed as the last step of the process, thus reducing potential incompatibilities with industrial processes. The fabricated devices show yellow-orange electroluminescence, visible with the naked eye in room lighting. A spectral characterization of light emission is presented and briefly discussed. [copyright] 2001 American Institute of Physics

  18. A new soft dielectric silicone elastomer matrix with high mechanical integrity and low losses

    Madsen, Frederikke Bahrt; Yu, Liyun; Daugaard, Anders Egede

    2015-01-01

    Though dielectric elastomers (DEs) have many favourable properties, the issue of high driving voltages limits the commercial viability of the technology. Driving voltage can be lowered by decreasing the Young's modulus and increasing the dielectric permittivity of silicone elastomers. A decrease...... in Young's modulus, however, is often accompanied by the loss of mechanical stability and thereby the lifetime of the DE. A new soft elastomer matrix, with no loss of mechanical stability and high dielectric permittivity, was prepared through the use of alkyl chloride-functional siloxane copolymers...

  19. The SVX3D integrated circuit for dead-timeless silicon strip readout

    Garcia-Sciveres, M. E-mail: mgs@lbl.gov; Milgrome, O.; Zimmerman, T.; Volobouev, I.; Ely, R.P.; Connolly, A.; Fish, D.; Affolder, T.; Sill, A

    1999-10-01

    The revision D of the SVX3 readout IC has been fabricated in the Honeywell radiation-hard 0.8 {mu}m bulk CMOS process, for instrumenting 712,704 silicon strips in the upgrade to the Collider Detector at Fermilab. This final revision incorporates new features and changes to the original architecture that were added to meet the goal of dead-timeless operation. This paper describes the features central to dead-timeless operation, and presents test data for un-irradiated and irradiated SVX3D chips. (author)

  20. Chemical silicon surface modification and bioreceptor attachment to develop competitive integrated photonic biosensors.

    Escorihuela, Jorge; Bañuls, María José; García Castelló, Javier; Toccafondo, Veronica; García-Rupérez, Jaime; Puchades, Rosa; Maquieira, Ángel

    2012-12-01

    Methodology for the functionalization of silicon-based materials employed for the development of photonic label-free nanobiosensors is reported. The studied functionalization based on organosilane chemistry allowed the direct attachment of biomolecules in a single step, maintaining their bioavailability. Using this immobilization approach in probe microarrays, successful specific detection of bacterial DNA is achieved, reaching hybridization sensitivities of 10 pM. The utility of the immobilization approach for the functionalization of label-free nanobiosensors based on photonic crystals and ring resonators was demonstrated using bovine serum albumin (BSA)/anti-BSA as a model system.

  1. Investigation of Properties of Novel Silicon Pixel Assemblies Employing Thin n-in-p Sensors and 3D-Integration

    Weigell, Philipp

    Until the end of the 2020 decade the LHC programme will be defining the high energy frontier of particle physics. During this time, three upgrade steps of the accelerator are currently planned to further increase the luminosity and energy reach. In the course of these upgrades the specifications of several parts of the current LHC detectors will be exceeded. Especially, the innermost tracking detectors are challenged by the increasing track densities and the radiation damage. This thesis focuses on the implications for the ATLAS experiment. Here, around 2021/2, after having collected an integrated luminosity of around 300/fb¹ , the silicon and gas detector components of the inner tracker will reach the end of their lifetime and will need to be replaced to ensure sufficient performance for continued running|especially if the luminosity is raised to about 5x10^35/(cm²s¹ ) as currently planned. An all silicon inner detector is foreseen to be installed. This upgrade demands cost-effective pixel assemblies with...

  2. Insertable B-Layer integration in the ATLAS experiment and development of future 3D silicon pixel sensors

    AUTHOR|(INSPIRE)INSPIRE-00371528; Røhne, Ole

    This work has two distinct objectives: the development of software for the integration of the Insertable B-Layer (IBL) in the ATLAS offline software framework and the study of the performance of 3D silicon sensors produced by SINTEF for future silicon pixel detectors. The former task consists in the implementation of the IBL byte stream converter. This offline tool performs the decoding of the binary-formatted data coming from the detector into information (e.g. hit position and Time over Threshold) that is stored in a format used in the reconstruction data flow. It also encodes the information extracted from simulations into a simulated IBL byte stream. The tool has been successfully used since the beginning of the LHC Run II data taking. The experimental work on SINTEF 3D sensors was performed in the framework of the development of pixel sensors for the next generation of tracking detectors. Preliminary tests on SINTEF 3D sensors showed that the majority of these devices suffers from high leakage currents, ...

  3. Micro-Encapsulated Phase Change Materials: A Review of Encapsulation, Safety and Thermal Characteristics

    Ahmed Hassan

    2016-10-01

    Full Text Available Phase change materials (PCMs have been identified as potential candidates for building energy optimization by increasing the thermal mass of buildings. The increased thermal mass results in a drop in the cooling/heating loads, thus decreasing the energy demand in buildings. However, direct incorporation of PCMs into building elements undermines their structural performance, thereby posing a challenge for building integrity. In order to retain/improve building structural performance, as well as improving energy performance, micro-encapsulated PCMs are integrated into building materials. The integration of microencapsulation PCMs into building materials solves the PCM leakage problem and assures a good bond with building materials to achieve better structural performance. The aim of this article is to identify the optimum micro-encapsulation methods and materials for improving the energy, structural and safety performance of buildings. The article reviews the characteristics of micro-encapsulated PCMs relevant to building integration, focusing on safety rating, structural implications, and energy performance. The article uncovers the optimum combinations of the shell (encapsulant and core (PCM materials along with encapsulation methods by evaluating their merits and demerits.

  4. Integration of the End Cap TEC+ of the CMS Silicon Strip Tracker

    Bremer, Richard; Feld, Lutz

    2008-01-01

    At the European Organization for Nuclear Research (CERN) ne ar Geneva the new proton-proton collider ring LHC and the experiments that will be operated a t this accelerator are currently being finalised. Among these experiments is the multi-purpose det ector CMS whose aim it is to discover and investigate new physical phenomena that might become ac cessible by virtue of the high center- of-mass energy and luminosity of the LHC. Two of the most inte nsively studied possibilities are the discovery of the Higgs Boson and of particles from the spectr um of supersymmetric extensions of the Standard Model. CMS is the first large experiment of high- energy particle physics whose inner tracking system is exclusively instrumented with silicon d etector modules. This tracker comprises 15 148 silicon strip modules enclosing the interaction poin t in 10–12 layers. The 1. Physikalisches Institut B of RWTH Aachen was deeply involved in the completi on of the end caps of the tracking system. The institute played a leading...

  5. Flip-chip bonded optoelectronic integration based on ultrathin silicon (UTSi) CMOS

    Hong, Sunkwang; Ho, Tawei; Zhang, Liping; Sawchuk, Alexander A.

    2003-06-01

    We describe the design and test of flip-chip bonded optoelectronic CMOS devices based on Peregrine Semiconductor's 0.5 micron Ultra-Thin Silicon on sapphire (UTSi) technology. The UTSi process eliminates the substrate leakage that typically results in crosstalk and reduces parasitic capacitance to the substrate, providing many benefits compared to bulk silicon CMOS. The low-loss synthetic sapphire substrate is optically transparent and has a coefficient of thermal expansion suitable for flip-chip bonding of vertical cavity surface emitting lasers (VCSELs) and detectors. We have designed two different UTSi CMOS chips. One contains a flip-chip bonded 1 x 4 photodiode array, a receiver array, a double edge triggered D-flip flop-based 2047-pattern pseudo random bit stream (PRBS) generator and a quadrature-phase LC-voltage controlled oscillator (VCO). The other chip contains a flip-chip bonded 1 x 4 VCSEL array, a driver array based on high-speed low-voltage differential signals (LVDS) and a full-balanced differential LC-VCO. Each VCSEL driver and receiver has individual input and bias voltage adjustments. Each UTSi chip is mounted on different printed circuit boards (PCBs) which have holes with about 1 mm radius for optical output and input paths through the sapphire substrate. We discuss preliminary testing of these chips.

  6. Review of encapsulation technologies

    Shaulis, L.

    1996-09-01

    The use of encapsulation technology to produce a compliant waste form is an outgrowth from existing polymer industry technology and applications. During the past 12 years, the Department of Energy (DOE) has been researching the use of this technology to treat mixed wastes (i.e., containing hazardous and radioactive wastes). The two primary encapsulation techniques are microencapsulation and macroencapsulation. Microencapsulation is the thorough mixing of a binding agent with a powdered waste, such as incinerator ash. Macroencapsulation coats the surface of bulk wastes, such as lead debris. Cement, modified cement, and polyethylene are the binding agents which have been researched the most. Cement and modified cement have been the most commonly used binding agents to date. However, recent research conducted by DOE laboratories have shown that polyethylene is more durable and cost effective than cements. The compressive strength, leachability, resistance to chemical degradation, etc., of polyethylene is significantly greater than that of cement and modified cement. Because higher waste loads can be used with polyethylene encapsulant, the total cost of polyethylene encapsulation is significantly less costly than cement treatment. The only research lacking in the assessment of polyethylene encapsulation treatment for mixed wastes is pilot and full-scale testing with actual waste materials. To date, only simulated wastes have been tested. The Rocky Flats Environmental Technology Site had planned to conduct pilot studies using actual wastes during 1996. This experiment should provide similar results to the previous tests that used simulated wastes. If this hypothesis is validated as anticipated, it will be clear that polyethylene encapsulation should be pursued by DOE to produce compliant waste forms

  7. Ion-implanted capacitively coupled silicon strip detectors with integrated polysilicon bias resistors processed on a 100 mm wafer

    Hietanen, I.; Lindgren, J.; Orava, R.; Tuuva, T.; Voutilainen, M.; Brenner, R.; Andersson, M.; Leinonen, K.; Ronkainen, H.

    1991-01-01

    Double-sided silicon strip detectors with integrated coupling capacitors and polysilicon resistors have been processed on a 100 mm wafer. A detector with an active area of 19x19 mm 2 was connected to LSI readout electronics and tested. The strip pitch of the detector is 25 μm on the p-side and 50 μm on the n-side. The readout pitch is 50 μm on both sides. The number of readout strips is 774 and the total number of strips is 1161. On the p-side a signal-to-noise of 35 has been measured using a 90 Sr β-source. The n-side has been studied using a laser. (orig.)

  8. 70 nm resolution in subsurface optical imaging of silicon integrated-circuits using pupil-function engineering

    Serrels, K. A.; Ramsay, E.; Reid, D. T.

    2009-02-01

    We present experimental evidence for the resolution-enhancing effect of an annular pupil-plane aperture when performing nonlinear imaging in the vectorial-focusing regime through manipulation of the focal spot geometry. By acquiring two-photon optical beam-induced current images of a silicon integrated-circuit using solid-immersion-lens microscopy at 1550 nm we achieved 70 nm resolution. This result demonstrates a reduction in the minimum effective focal spot diameter of 36%. In addition, the annular-aperture-induced extension of the depth-of-focus causes an observable decrease in the depth contrast of the resulting image and we explain the origins of this using a simulation of the imaging process.

  9. Noise characterization of silicon strip detectors-comparison of sensors with and without integrated jfet source-follower.

    Giacomini, Gabriele

    Noise is often the main factor limiting the performance of detector systems. In this work a detailed study of the noise contributions in different types of silicon microstrip sensors is carried on. We investigate three sensors with double-sided readout fabricated by different suppliers for the ALICE experiment at the CERN LHC, in addition to detectors including an integrated JFET Source-Follower as a first signal conditioning stage. The latter have been designed as an attempt at improving the performance when very long strips, obtained by gangling together several sensors, are required. After a description of the strip sensors and of their operation, the “static” characterization measurements performed on them (current and capacitance versus voltage and/or frequency) are illustrated and interpreted. Numerical device simulation has been employed as an aid in interpreting some of the measurement results. The commonly used models for expressing the noise of the detector-amplifier system in terms of its relev...

  10. Interface and integration of a silicon graphics UNIX computer with the Encore based SCE SONGS 2/3 simulator

    Olmos, J.; Lio, P.; Chan, K.S.

    1991-01-01

    The SONGS Unit 2/3 simulator was originally implemented in 1983 on a Master/Slave 32/7780 Encore MPX platform by the Singer-Link Company. In 1986, a 32/9780 MPX Encore computer was incorporated into the simulator computer system to provide the additional CPU processing needed to install the PACE plant monitoring system and to enable the upgrade of the NSSS Simulation to the advanced RETACT/STK models. Since the spring of 1990, the SCE SONGS Nuclear Training Division simulator technical staff, in cooperation with Micro Simulation Inc., has undertaken a project to integrate a Silicon Graphics UNIX based computer with the Encore MPX SONGS 2/3 simulation computer system. In this paper the authors review the objectives, advantages to be gained, software and hardware approaches utilized, and the results so far achieved by the authors' project

  11. Imaging and chemical surface analysis of biomolecular functionalization of monolithically integrated on silicon Mach-Zehnder interferometric immunosensors

    Gajos, Katarzyna; Angelopoulou, Michailia; Petrou, Panagiota; Awsiuk, Kamil; Kakabakos, Sotirios; Haasnoot, Willem; Bernasik, Andrzej; Rysz, Jakub; Marzec, Mateusz M.; Misiakos, Konstantinos; Raptis, Ioannis; Budkowski, Andrzej

    2016-01-01

    Highlights: • Optimization of probe immobilization with robotic spotter printing overlapping spots. • In-situ inspection of microstructured surfaces of biosensors integrated on silicon. • Imaging and chemical analysis of immobilization, surface blocking and immunoreaction. • Insight with molecular discrimination into step-by-step sensor surface modifications. • Optimized biofunctionalization improves sensor sensitivity and response repeatability. - Abstract: Time-of-flight secondary ion mass spectrometry (imaging, micro-analysis) has been employed to evaluate biofunctionalization of the sensing arm areas of Mach-Zehnder interferometers monolithically integrated on silicon chips for the immunochemical (competitive) detection of bovine κ-casein in goat milk. Biosensor surfaces are examined after: modification with (3-aminopropyl)triethoxysilane, application of multiple overlapping spots of κ-casein solutions, blocking with 100-times diluted goat milk, and reaction with monoclonal mouse anti-κ-casein antibodies in blocking solution. The areas spotted with κ-casein solutions of different concentrations are examined and optimum concentration providing homogeneous coverage is determined. Coverage of biosensor surfaces with biomolecules after each of the sequential steps employed in immunodetection is also evaluated with TOF-SIMS, supplemented by Atomic force microscopy and X-ray photoelectron spectroscopy. Uniform molecular distributions are observed on the sensing arm areas after spotting with optimum κ-casein concentration, blocking and immunoreaction. The corresponding biomolecular compositions are determined with a Principal Component Analysis that distinguished between protein amino acids and milk glycerides, as well as between amino acids characteristic for Mabs and κ-casein, respectively. Use of the optimum conditions (κ-casein concentration) for functionalization of chips with arrays of ten Mach-Zehnder interferometers provided on-chips assays

  12. Imaging and chemical surface analysis of biomolecular functionalization of monolithically integrated on silicon Mach-Zehnder interferometric immunosensors

    Gajos, Katarzyna, E-mail: kasia.fornal@uj.edu.pl [M. Smoluchowski Institute of Physics, Jagiellonian University, Łojasiewicza 11, 30-348 Kraków (Poland); Angelopoulou, Michailia; Petrou, Panagiota [Institute of Nuclear & Radiological Sciences & Technology, Energy & Safety, NCSR Demokritos, P. Grigoriou & Neapoleos St, Aghia Paraksevi 15310, Athens (Greece); Awsiuk, Kamil [M. Smoluchowski Institute of Physics, Jagiellonian University, Łojasiewicza 11, 30-348 Kraków (Poland); Kakabakos, Sotirios [Institute of Nuclear & Radiological Sciences & Technology, Energy & Safety, NCSR Demokritos, P. Grigoriou & Neapoleos St, Aghia Paraksevi 15310, Athens (Greece); Haasnoot, Willem [RIKILT Wageningen UR, Akkermaalsbos 2, 6708 WB Wageningen (Netherlands); Bernasik, Andrzej [Faculty of Physics and Applied Computer Science, AGH University of Science and Technology, Mickiewicza 30, 30-059 Kraków (Poland); Academic Centre for Materials and Nanotechnology, AGH University of Science and Technology, Mickiewicza 30, 30-059 Kraków (Poland); Rysz, Jakub [M. Smoluchowski Institute of Physics, Jagiellonian University, Łojasiewicza 11, 30-348 Kraków (Poland); Marzec, Mateusz M. [Academic Centre for Materials and Nanotechnology, AGH University of Science and Technology, Mickiewicza 30, 30-059 Kraków (Poland); Misiakos, Konstantinos; Raptis, Ioannis [Department of Microelectronics, Institute of Nanoscience and Nanotechnology, NCSR Demokritos, P. Grigoriou & Neapoleos St, Aghia Paraksevi 15310, Athens (Greece); Budkowski, Andrzej [M. Smoluchowski Institute of Physics, Jagiellonian University, Łojasiewicza 11, 30-348 Kraków (Poland)

    2016-11-01

    Highlights: • Optimization of probe immobilization with robotic spotter printing overlapping spots. • In-situ inspection of microstructured surfaces of biosensors integrated on silicon. • Imaging and chemical analysis of immobilization, surface blocking and immunoreaction. • Insight with molecular discrimination into step-by-step sensor surface modifications. • Optimized biofunctionalization improves sensor sensitivity and response repeatability. - Abstract: Time-of-flight secondary ion mass spectrometry (imaging, micro-analysis) has been employed to evaluate biofunctionalization of the sensing arm areas of Mach-Zehnder interferometers monolithically integrated on silicon chips for the immunochemical (competitive) detection of bovine κ-casein in goat milk. Biosensor surfaces are examined after: modification with (3-aminopropyl)triethoxysilane, application of multiple overlapping spots of κ-casein solutions, blocking with 100-times diluted goat milk, and reaction with monoclonal mouse anti-κ-casein antibodies in blocking solution. The areas spotted with κ-casein solutions of different concentrations are examined and optimum concentration providing homogeneous coverage is determined. Coverage of biosensor surfaces with biomolecules after each of the sequential steps employed in immunodetection is also evaluated with TOF-SIMS, supplemented by Atomic force microscopy and X-ray photoelectron spectroscopy. Uniform molecular distributions are observed on the sensing arm areas after spotting with optimum κ-casein concentration, blocking and immunoreaction. The corresponding biomolecular compositions are determined with a Principal Component Analysis that distinguished between protein amino acids and milk glycerides, as well as between amino acids characteristic for Mabs and κ-casein, respectively. Use of the optimum conditions (κ-casein concentration) for functionalization of chips with arrays of ten Mach-Zehnder interferometers provided on-chips assays

  13. Nondestructive Assay Options for Spent Fuel Encapsulation

    Tobin, Stephen J. [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Jansson, Peter [Uppsala Univ. (Sweden)

    2014-10-02

    This report describes the role that nondestructive assay (NDA) techniques and systems of NDA techniques may have in the context of an encapsulation and deep geological repository. The potential NDA needs of an encapsulation and repository facility include safeguards, heat content, and criticality. Some discussion of the facility needs is given, with the majority of the report concentrating on the capability and characteristics of individual NDA instruments and techniques currently available or under development. Particular emphasis is given to how the NDA techniques can be used to determine the heat production of an assembly, as well as meet the dual safeguards needs of 1) determining the declared parameters of initial enrichment, burn-up, and cooling time and 2) detecting defects (total, partial, and bias). The report concludes with the recommendation of three integrated systems that might meet the combined NDA needs of the encapsulation/repository facility.

  14. A CMOS-compatible large-scale monolithic integration of heterogeneous multi-sensors on flexible silicon for IoT applications

    Nassar, Joanna M.

    2017-02-07

    We report CMOS technology enabled fabrication and system level integration of flexible bulk silicon (100) based multi-sensors platform which can simultaneously sense pressure, temperature, strain and humidity under various physical deformations. We also show an advanced wearable version for body vital monitoring which can enable advanced healthcare for IoT applications.

  15. Data Transmission and Thermo-Optic Tuning Performance of Dielectric-Loaded Plasmonic Structures Hetero-Integrated on a Silicon Chip

    Giannoulis, G.; Kalavrouziotis, D.; Apostolopoulos, D.

    2012-01-01

    We demonstrate experimental evidence of the data capture and the low-energy thermo-optic tuning credentials of dielectric-loaded plasmonic structures integrated on a silicon chip. We show 7-nm thermo-optical tuning of a plasmonic racetrack-resonator with less than 3.3 mW required electrical power...

  16. Silicon photonics fiber-to-the-home transceiver array based on transfer-printing-based integration of III-V photodetectors.

    Zhang, Jing; De Groote, Andreas; Abbasi, Amin; Loi, Ruggero; O'Callaghan, James; Corbett, Brian; Trindade, António José; Bower, Christopher A; Roelkens, Gunther

    2017-06-26

    A 4-channel silicon photonics transceiver array for Point-to-Point (P2P) fiber-to-the-home (FTTH) optical networks at the central office (CO) side is demonstrated. A III-V O-band photodetector array was integrated onto the silicon photonic transmitter through transfer printing technology, showing a polarization-independent responsivity of 0.39 - 0.49 A/W in the O-band. The integrated PDs (30 × 40 μm 2 mesa) have a 3 dB bandwidth of 11.5 GHz at -3 V bias. Together with high-speed C-band silicon ring modulators whose bandwidth is up to 15 GHz, operation of the transceiver array at 10 Gbit/s is demonstrated. The use of transfer printing for the integration of the III-V photodetectors allows for an efficient use of III-V material and enables the scalable integration of III-V devices on silicon photonics wafers, thereby reducing their cost.

  17. A CMOS-compatible large-scale monolithic integration of heterogeneous multi-sensors on flexible silicon for IoT applications

    Nassar, Joanna M.; Sevilla, Galo T.; Velling, Seneca J.; Cordero, Marlon D.; Hussain, Muhammad Mustafa

    2017-01-01

    We report CMOS technology enabled fabrication and system level integration of flexible bulk silicon (100) based multi-sensors platform which can simultaneously sense pressure, temperature, strain and humidity under various physical deformations. We also show an advanced wearable version for body vital monitoring which can enable advanced healthcare for IoT applications.

  18. Integrating a Silicon Solar Cell with a Triboelectric Nanogenerator via a Mutual Electrode for Harvesting Energy from Sunlight and Raindrops.

    Liu, Yuqiang; Sun, Na; Liu, Jiawei; Wen, Zhen; Sun, Xuhui; Lee, Shuit-Tong; Sun, Baoquan

    2018-03-27

    Solar cells, as promising devices for converting light into electricity, have a dramatically reduced performance on rainy days. Here, an energy harvesting structure that integrates a solar cell and a triboelectric nanogenerator (TENG) device is built to realize power generation from both sunlight and raindrops. A heterojunction silicon (Si) solar cell is integrated with a TENG by a mutual electrode of a poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) film. Regarding the solar cell, imprinted PEDOT:PSS is used to reduce light reflection, which leads to an enhanced short-circuit current density. A single-electrode-mode water-drop TENG on the solar cell is built by combining imprinted polydimethylsiloxane (PDMS) as a triboelectric material combined with a PEDOT:PSS layer as an electrode. The increasing contact area between the imprinted PDMS and water drops greatly improves the output of the TENG with a peak short-circuit current of ∼33.0 nA and a peak open-circuit voltage of ∼2.14 V, respectively. The hybrid energy harvesting system integrated electrode configuration can combine the advantages of high current level of a solar cell and high voltage of a TENG device, promising an efficient approach to collect energy from the environment in different weather conditions.

  19. Roof-integrated amorphous silicon photovoltaic installation at the Institute for Micro-Technology; Installation photovoltaique IMT Neuchatel silicium amorphe integre dans toiture

    Tscharner, R.; Shah, A.V.

    2003-07-01

    This final report for the Swiss Federal Office of Energy (SFOE) describes the 6.44 kW grid-connected photovoltaic (PV) power plant that has been in operation since 1996 at the Institute for Micro-Technology in Neuchatel, Switzerland. The PV plant, which features large-area, fully integrated modules using amorphous silicon cells was the first of its kind in Switzerland. Experience gained with the installation, which has been fully operational since its construction, as well as the power produced and efficiencies measured are presented and commented. The role of the installation as the forerunner of new, so-called 'micro-morph' thin-film solar cell technology developed at the institute is stressed. Technical details of the plant and its performance are given.

  20. Transport of encapsulated nuclear fuels

    Broman, Ulrika; Dybeck, Peter; Ekendahl, Ann-Mari

    2005-12-01

    The transport system for encapsulated fuel is described, including a preliminary drawing of a transport container. In the report, the encapsulation plant is assumed to be located to Oskarshamn, and the repository to Oskarshamn or Forsmark

  1. Large current MOSFET on photonic silicon-on-insulator wafers and its monolithic integration with a thermo-optic 2 × 2 Mach-Zehnder switch.

    Cong, G W; Matsukawa, T; Chiba, T; Tadokoro, H; Yanagihara, M; Ohno, M; Kawashima, H; Kuwatsuka, H; Igarashi, Y; Masahara, M; Ishikawa, H

    2013-03-25

    n-channel body-tied partially depleted metal-oxide-semiconductor field-effect transistors (MOSFETs) were fabricated for large current applications on a silicon-on-insulator wafer with photonics-oriented specifications. The MOSFET can drive an electrical current as large as 20 mA. We monolithically integrated this MOSFET with a 2 × 2 Mach-Zehnder interferometer optical switch having thermo-optic phase shifters. The static and dynamic performances of the integrated device are experimentally evaluated.

  2. Subcutaneous encapsulated fat necrosis

    Aydin, Dogu; Berg, Jais O

    2016-01-01

    We have described subcutaneous encapsulated fat necrosis, which is benign, usually asymptomatic and underreported. Images have only been published on two earlier occasions, in which the necrotic nodules appear "pearly" than the cloudy yellow surface in present case. The presented image may help...

  3. High-Resolution Silicon-based Particle Sensor with Integrated Amplification, Phase I

    National Aeronautics and Space Administration — This SBIR Phase I project will deliver a breakthrough in particle-detection sensors, by integrating an amplifying junction as part of the detector topology. Focusing...

  4. Robust integration schemes for junction-based modulators in a 200mm CMOS compatible silicon photonic platform (Conference Presentation)

    Szelag, Bertrand; Abraham, Alexis; Brision, Stéphane; Gindre, Paul; Blampey, Benjamin; Myko, André; Olivier, Segolene; Kopp, Christophe

    2017-05-01

    Silicon photonic is becoming a reality for next generation communication system addressing the increasing needs of HPC (High Performance Computing) systems and datacenters. CMOS compatible photonic platforms are developed in many foundries integrating passive and active devices. The use of existing and qualified microelectronics process guarantees cost efficient and mature photonic technologies. Meanwhile, photonic devices have their own fabrication constraints, not similar to those of cmos devices, which can affect their performances. In this paper, we are addressing the integration of PN junction Mach Zehnder modulator in a 200mm CMOS compatible photonic platform. Implantation based device characteristics are impacted by many process variations among which screening layer thickness, dopant diffusion, implantation mask overlay. CMOS devices are generally quite robust with respect to these processes thanks to dedicated design rules. For photonic devices, the situation is different since, most of the time, doped areas must be carefully located within waveguides and CMOS solutions like self-alignment to the gate cannot be applied. In this work, we present different robust integration solutions for junction-based modulators. A simulation setup has been built in order to optimize of the process conditions. It consist in a Mathlab interface coupling process and device electro-optic simulators in order to run many iterations. Illustrations of modulator characteristic variations with process parameters are done using this simulation setup. Parameters under study are, for instance, X and Y direction lithography shifts, screening oxide and slab thicknesses. A robust process and design approach leading to a pn junction Mach Zehnder modulator insensitive to lithography misalignment is then proposed. Simulation results are compared with experimental datas. Indeed, various modulators have been fabricated with different process conditions and integration schemes. Extensive

  5. Design of photonic phased array switches using nano electromechanical systems on silicon-on-insulator integration platform

    Hussein, Ali Abdulsattar

    This thesis presents an introduction to the design and simulation of a novel class of integrated photonic phased array switch elements. The main objective is to use nano-electromechanical (NEMS) based phase shifters of cascaded under-etched slot nanowires that are compact in size and require a small amount of power to operate them. The structure of the switch elements is organized such that it brings the phase shifting elements to the exterior sides of the photonic circuits. The transition slot couplers, used to interconnect the phase shifters, are designed to enable biasing one of the silicon beams of each phase shifter from an electrode located at the side of the phase shifter. The other silicon beam of each phase shifter is biased through the rest of the silicon structure of the switch element, which is taken as a ground. Phased array switch elements ranging from 2x2 up to 8x8 multiple-inputs/multiple-outputs (MIMO) are conveniently designed within reasonable footprints native to the current fabrication technologies. Chapter one presents the general layout of the various designs of the switch elements and demonstrates their novel features. This demonstration will show how waveguide disturbances in the interconnecting network from conventional switch elements can be avoided by adopting an innovative design. Some possible applications for the designed switch elements of different sizes and topologies are indicated throughout the chapter. Chapter two presents the design of the multimode interference (MMI) couplers used in the switch elements as splitters, combiners and waveguide crossovers. Simulation data and design methodologies for the multimode couplers of interest are detailed in this chapter. Chapter three presents the design and analysis of the NEMS-operated phase shifters. Both simulations and numerical analysis are utilized in the design of a 0°-180° capable NEMS-operated phase shifter. Additionally, the response of some of the designed photonic phased

  6. Encapsulation and Nano-Encapsulation of Papain Active Sites to Enhance Radiolityc Stability and Decrease Toxicity

    Lugão, A. B.; Varca, G. H.C.; Mathor, M. B.; Santos Lopes, P.; Rogero, M. S.S.; Rogero, J.R., E-mail: ablugao@ipen.br [Comissão Nacional de Energia Nuclear (CNEN), Instituto de Pesquisas Energeticas e Nucleares (IPEN), Av. Prof. Lineu Prestes, 2242 Cidade Universitaria, 05508-000 Sao Paulo (Brazil)

    2010-07-01

    Papain is used as an ingredient in various enzymatic debridement preparations. Those paste-like preparations are based on water solution and usually are sterilized by radiation. As a consequence, there is a major decrease in papain activity. Papain containing preparations are used in chronic wounds treatment in order to clean and remove the necrotic tissue. However FDA (2008) is taking an action against such products due to severe adverse events reported in patients submitted to papain treatments. Thus, the main goal of this proposal is to develop encapsulated papain containing membranes based on hydrogels and silicone rubber in an attempt to achieve a controllable distribution of size and delivery profile, a toxicity reduction and provide stability towards radiation processing through molecular encapsulation with β-cyclodextrin, which may also provide protection to the enzyme against radiation induced radiolysis. (author)

  7. Encapsulation and Nano-Encapsulation of Papain Active Sites to Enhance Radiolityc Stability and Decrease Toxicity

    Lugão, A.B.; Varca, G.H.C.; Mathor, M.B.; Santos Lopes, P.; Rogero, M.S.S.; Rogero, J.R.

    2010-01-01

    Papain is used as an ingredient in various enzymatic debridement preparations. Those paste-like preparations are based on water solution and usually are sterilized by radiation. As a consequence, there is a major decrease in papain activity. Papain containing preparations are used in chronic wounds treatment in order to clean and remove the necrotic tissue. However FDA (2008) is taking an action against such products due to severe adverse events reported in patients submitted to papain treatments. Thus, the main goal of this proposal is to develop encapsulated papain containing membranes based on hydrogels and silicone rubber in an attempt to achieve a controllable distribution of size and delivery profile, a toxicity reduction and provide stability towards radiation processing through molecular encapsulation with β-cyclodextrin, which may also provide protection to the enzyme against radiation induced radiolysis. (author)

  8. Microspot-based ELISA in microfluidics: chemiluminescence and colorimetry detection using integrated thin-film hydrogenated amorphous silicon photodiodes.

    Novo, Pedro; Prazeres, Duarte Miguel França; Chu, Virginia; Conde, João Pedro

    2011-12-07

    Microfluidic technology has the potential to decrease the time of analysis and the quantity of sample and reactants required in immunoassays, together with the potential of achieving high sensitivity, multiplexing, and portability. A lab-on-a-chip system was developed and optimized using optical and fluorescence microscopy. Primary antibodies are adsorbed onto the walls of a PDMS-based microchannel via microspotting. This probe antibody is then recognised using secondary FITC or HRP labelled antibodies responsible for providing fluorescence or chemiluminescent and colorimetric signals, respectively. The system incorporated a micron-sized thin-film hydrogenated amorphous silicon photodiode microfabricated on a glass substrate. The primary antibody spots in the PDMS-based microfluidic were precisely aligned with the photodiodes for the direct detection of the antibody-antigen molecular recognition reactions using chemiluminescence and colorimetry. The immunoassay takes ~30 min from assay to the integrated detection. The conditions for probe antibody microspotting and for the flow-through ELISA analysis in the microfluidic format with integrated detection were defined using antibody solutions with concentrations in the nM-μM range. Sequential colorimetric or chemiluminescence detection of specific antibody-antigen molecular recognition was quantitatively detected using the photodiode. Primary antibody surface densities down to 0.182 pmol cm(-2) were detected. Multiplex detection using different microspotted primary antibodies was demonstrated.

  9. A novel Silicon Photomultiplier with bulk integrated quench resistors: utilization in optical detection and tracking applications for particle physics

    Petrovics, Stefan, E-mail: stp@hll.mpg.de [Halbleiterlabor der Max-Planck Gesellschaft, Otto-Hahn-Ring 6, D-81739 Munich (Germany); Andricek, Ladislav [Halbleiterlabor der Max-Planck Gesellschaft, Otto-Hahn-Ring 6, D-81739 Munich (Germany); Diehl, Inge; Hansen, Karsten [DESY, Notkestrasse 85, D-22607 Hamburg (Germany); Jendrysik, Christian [Infineon Technologies AG, Am Campeon 1-12, D-85579 Neubiberg (Germany); Krueger, Katja [DESY, Notkestrasse 85, D-22607 Hamburg (Germany); Lehmann, Raik; Ninkovic, Jelena [Halbleiterlabor der Max-Planck Gesellschaft, Otto-Hahn-Ring 6, D-81739 Munich (Germany); Reckleben, Christian [DESY, Notkestrasse 85, D-22607 Hamburg (Germany); Richter, Rainer; Schaller, Gerhard; Schopper, Florian [Halbleiterlabor der Max-Planck Gesellschaft, Otto-Hahn-Ring 6, D-81739 Munich (Germany); Sefkow, Felix [DESY, Notkestrasse 85, D-22607 Hamburg (Germany)

    2017-02-11

    Silicon Photomultipliers (SiPMs) are a promising candidate for replacing conventional photomultiplier tubes (PMTs) in many applications, thanks to ongoing developments and advances in their technology. Conventional SiPMs are generally an array of avalanche photo diodes, operated in Geiger mode and read out in parallel, thus leading to the necessity of a high ohmic quenching resistor. This resistor enables passive quenching and is usually located on top of the array, limiting the fill factor of the device. In this paper, a novel detector concept with a bulk integrated quenching resistor will be recapped. In addition, due to other advantages of this novel detector design, a new concept, in which these devices will be utilized as tracking detectors for particle physics applications will be introduced, as well as first simulation studies and experimental measurements of this new approach. - Highlights: • A novel SiPM concept with bulk integrated quenching resistor is shown. • First prototypes of these SiPMs as tracking detectors are proposed. • Simulations of the Geiger efficiency suggest feasible operations at low overbias. • First measurements of the electron detection efficiency show promising results. • Measurements are in good agreement with the simulations.

  10. Study of harsh environment operation of flexible ferroelectric memory integrated with PZT and silicon fabric

    Ghoneim, M. T.; Hussain, M. M.

    2015-01-01

    Flexible memory can enable industrial, automobile, space, and smart grid centered harsh/extreme environment focused electronics application(s) for enhanced operation, safety, and monitoring where bent or complex shaped infrastructures are common and state-of-the-art rigid electronics cannot be deployed. Therefore, we report on the physical-mechanical-electrical characteristics of a flexible ferroelectric memory based on lead zirconium titanate as a key memory material and flexible version of bulk mono-crystalline silicon (100). The experimented devices show a bending radius down to 1.25 cm corresponding to 0.16% nominal strain (high pressure of ∼260 MPa), and full functionality up to 225 °C high temperature in ambient gas composition (21% oxygen and 55% relative humidity). The devices showed unaltered data retention and fatigue properties under harsh conditions, still the reduced memory window (20% difference between switching and non-switching currents at 225 °C) requires sensitive sense circuitry for proper functionality and is the limiting factor preventing operation at higher temperatures

  11. Study of harsh environment operation of flexible ferroelectric memory integrated with PZT and silicon fabric

    Ghoneim, M. T.; Hussain, M. M.

    2015-08-01

    Flexible memory can enable industrial, automobile, space, and smart grid centered harsh/extreme environment focused electronics application(s) for enhanced operation, safety, and monitoring where bent or complex shaped infrastructures are common and state-of-the-art rigid electronics cannot be deployed. Therefore, we report on the physical-mechanical-electrical characteristics of a flexible ferroelectric memory based on lead zirconium titanate as a key memory material and flexible version of bulk mono-crystalline silicon (100). The experimented devices show a bending radius down to 1.25 cm corresponding to 0.16% nominal strain (high pressure of ˜260 MPa), and full functionality up to 225 °C high temperature in ambient gas composition (21% oxygen and 55% relative humidity). The devices showed unaltered data retention and fatigue properties under harsh conditions, still the reduced memory window (20% difference between switching and non-switching currents at 225 °C) requires sensitive sense circuitry for proper functionality and is the limiting factor preventing operation at higher temperatures.

  12. Study of harsh environment operation of flexible ferroelectric memory integrated with PZT and silicon fabric

    Ghoneim, M. T.; Hussain, M. M., E-mail: muhammadmustafa.hussain@kaust.edu.sa [Integrated Nanotechnology Lab, Electrical Engineering, Computer Electrical Mathematical Science and Engineering Division, King Abdullah University of Science and Technology, Thuwal 23955-6900 (Saudi Arabia)

    2015-08-03

    Flexible memory can enable industrial, automobile, space, and smart grid centered harsh/extreme environment focused electronics application(s) for enhanced operation, safety, and monitoring where bent or complex shaped infrastructures are common and state-of-the-art rigid electronics cannot be deployed. Therefore, we report on the physical-mechanical-electrical characteristics of a flexible ferroelectric memory based on lead zirconium titanate as a key memory material and flexible version of bulk mono-crystalline silicon (100). The experimented devices show a bending radius down to 1.25 cm corresponding to 0.16% nominal strain (high pressure of ∼260 MPa), and full functionality up to 225 °C high temperature in ambient gas composition (21% oxygen and 55% relative humidity). The devices showed unaltered data retention and fatigue properties under harsh conditions, still the reduced memory window (20% difference between switching and non-switching currents at 225 °C) requires sensitive sense circuitry for proper functionality and is the limiting factor preventing operation at higher temperatures.

  13. Study of harsh environment operation of flexible ferroelectric memory integrated with PZT and silicon fabric

    Ghoneim, Mohamed T.

    2015-08-05

    Flexible memory can enable industrial, automobile, space, and smart grid centered harsh/extreme environment focused electronics application(s) for enhanced operation, safety, and monitoring where bent or complex shaped infrastructures are common and state-of-the-art rigid electronics cannot be deployed. Therefore, we report on the physical-mechanical-electrical characteristics of a flexible ferroelectric memory based on lead zirconium titanate as a key memory material and flexible version of bulk mono-crystalline silicon (100). The experimented devices show a bending radius down to 1.25 cm corresponding to 0.16% nominal strain (high pressure of ∼260 MPa), and full functionality up to 225 °C high temperature in ambient gas composition (21% oxygen and 55% relative humidity). The devices showed unaltered data retention and fatigue properties under harsh conditions, still the reduced memory window (20% difference between switching and non-switching currents at 225 °C) requires sensitive sense circuitry for proper functionality and is the limiting factor preventing operation at higher temperatures.

  14. In-situ formation of nanoparticles within a silicon-based matrix

    Thoma, Steven G [Albuquerque, NM; Wilcoxon, Jess P [Albuquerque, NM; Abrams, Billie L [Albuquerque, NM

    2008-06-10

    A method for encapsulating nanoparticles with an encapsulating matrix that minimizes aggregation and maintains favorable properties of the nanoparticles. The matrix comprises silicon-based network-forming compounds such as ormosils and polysiloxanes. The nanoparticles are synthesized from precursors directly within the silicon-based matrix.

  15. Arsenic implantation into polycrystalline silicon and diffusion to silicon substrate

    Tsukamoto, K.; Akasaka, Y.; Horie, K.

    1977-01-01

    Arsenic implantation into polycrystalline silicon and drive-in diffusion to silicon substrate have been investigated by MeV He + backscattering analysis and also by electrical measurements. The range distributions of arsenic implanted into polycrystalline silicon are well fitted to Gaussian distributions over the energy range 60--350 keV. The measured values of R/sub P/ and ΔR/sub P/ are about 10 and 20% larger than the theoretical predictions, respectively. The effective diffusion coefficient of arsenic implanted into polycrystalline silicon is expressed as D=0.63 exp[(-3.22 eV/kT)] and is independent of the arsenic concentration. The drive-in diffusion of arsenic from the implanted polycrystalline silicon layer into the silicon substrate is significantly affected by the diffusion atmosphere. In the N 2 atmosphere, a considerable amount of arsenic atoms diffuses outward to the ambient. The outdiffusion can be suppressed by encapsulation with Si 3 N 4 . In the oxidizing atmosphere, arsenic atoms are driven inward by growing SiO 2 due to the segregation between SiO 2 and polycrystalline silicon, and consequently the drive-in diffusion of arsenic is enhanced. At the interface between the polycrystalline silicon layer and the silicon substrate, arsenic atoms are likely to segregate at the polycrystalline silicon side

  16. Fabrication of an integrated ΔE-E-silicon detector by wafer bonding using cobalt disilicide

    Thungstroem, G.; Veldhuizen, E.J. van; Westerberg, L.; Norlin, L.-O.; Petersson, C.S.

    1997-01-01

    The problem concerning mechanical stability of thin self-supporting ΔE detector in a ΔE-E semiconductor detector telescope, has been solved by integrating both detectors into one unit. We show here a low-cost method to integrate the detectors by wafer bonding using cobalt disilicide. The ΔE-detector has a thickness of 6.5 μm and the E detector 290 μm with an area of 24.8 mm 2 . The system was characterized with secondary ion mass spectroscopy (SIMS), scanning electron microscopy (SEM), electrical measurement, particle measurement and two-dimensional electrical simulation. (orig.)

  17. Fabrication of an integrated {Delta}E-E-silicon detector by wafer bonding using cobalt disilicide

    Thungstroem, G. [Mid-Sweden Univ., Sundsvall (Sweden). Dept. of Inf. Technol.]|[Royal Institute of Technology, Department of Electronics, Electrum 229, S-164 40 Kista (Sweden); Veldhuizen, E.J. van [Uppsala University, Department of Radiation Science, Box 535, S-751 21 Uppsala (Sweden); Westerberg, L. [Uppsala University, The Svedberg Laboratory, Box 533, S-751 21 Uppsala (Sweden); Norlin, L.-O. [Royal Institute of Technology, Department of Physics, Frescativaegen 24, S-104 05 Stockholm (Sweden); Petersson, C.S. [Royal Institute of Technology, Department of Electronics, Electrum 229, S-164 40 Kista (Sweden)

    1997-06-01

    The problem concerning mechanical stability of thin self-supporting {Delta}E detector in a {Delta}E-E semiconductor detector telescope, has been solved by integrating both detectors into one unit. We show here a low-cost method to integrate the detectors by wafer bonding using cobalt disilicide. The {Delta}E-detector has a thickness of 6.5 {mu}m and the E detector 290 {mu}m with an area of 24.8 mm{sup 2}. The system was characterized with secondary ion mass spectroscopy (SIMS), scanning electron microscopy (SEM), electrical measurement, particle measurement and two-dimensional electrical simulation. (orig.).

  18. Encapsulation Efficiency, Oscillatory Rheometry

    Z. Mohammad Hassani

    2014-01-01

    Full Text Available Nanoliposomes are one of the most important polar lipid-based nanocarriers which can be used for encapsulation of both hydrophilic and hydrophobic active compounds. In this research, nanoliposomes based on lecithin-polyethylene glycol-gamma oryzanol were prepared by using a modified thermal method. Only one melting peak in DSC curve of gamma oryzanol bearing liposomes was observed which could be attributed to co-crystallization of both compounds. The addition of gamma oryzanol, caused to reduce the melting point of 5% (w/v lecithin-based liposome from 207°C to 163.2°C. At high level of lecithin, increasing of liposome particle size (storage at 4°C for two months was more obvious and particle size increased from 61 and 113 to 283 and 384 nanometers, respectively. The encapsulation efficiency of gamma oryzanol increased from 60% to 84.3% with increasing lecithin content. The encapsulation stability of oryzanol in liposome was determined at different concentrations of lecithin 3, 5, 10, 20% (w/v and different storage times (1, 7, 30 and 60 days. In all concentrations, the encapsulation stability slightly decreased during 30 days storage. The scanning electron microscopy (SEM images showed relatively spherical to elliptic particles which indicated to low extent of particles coalescence. The oscillatory rheometry showed that the loss modulus of liposomes were higher than storage modulus and more liquid-like behavior than solid-like behavior. The samples storage at 25°C for one month, showed higher viscoelastic parameters than those having been stored at 4°C which were attributed to higher membrane fluidity at 25°C and their final coalescence.Nanoliposomes are one of the most important polar lipid based nanocarriers which can be used for encapsulation of both hydrophilic and hydrophobic active compounds. In this research, nanoliposomes based on lecithin-polyethylene glycol-gamma oryzanol were prepared by using modified thermal method. Only one

  19. Encapsulating spent nuclear fuel

    Fleischer, L.R.; Gunasekaran, M.

    1979-01-01

    A system is described for encapsulating spent nuclear fuel discharged from nuclear reactors in the form of rods or multi-rod assemblies. The rods are completely and contiguously enclosed in concrete in which metallic fibres are incorporated to increase thermal conductivity and polymers to decrease fluid permeability. This technique provides the advantage of acceptable long-term stability for storage over the conventional underwater storage method. Examples are given of suitable concrete compositions. (UK)

  20. Design and characterization of low-loss 2D grating couplers for silicon photonics integrated circuits

    Lacava, C.; Carrol, L.; Bozzola, A.; Marchetti, R.; Minzioni, P.; Cristiani, I.; Fournier, M.; Bernabe, S.; Gerace, D.; Andreani, L. C.

    2016-03-01

    We present the characterization of Silicon-on-insulator (SOI) photonic-crystal based 2D grating-couplers (2D-GCs) fabricated by CEA-Leti in the frame of the FP7 Fabulous project, which is dedicated to the realization of devices and systems for low-cost and high-performance passives-optical-networks. On the analyzed samples different test structures are present, including 2D-GC connected to another 2D-GC by different waveguides (in a Mach-Zehnder like configuration), and 2D-GC connected to two separate 2D-GCs, so as to allow a complete assessment of different parameters. Measurements were carried out using a tunable laser source operating in the extended telecom bandwidth and a fiber-based polarization controlling system at the input of device-under-test. The measured data yielded an overall fiber-to-fiber loss of 7.5 dB for the structure composed by an input 2D-GC connected to two identical 2D-GCs. This value was obtained at the peak wavelength of the grating, and the 3-dB bandwidth of the 2D-GC was assessed to be 43 nm. Assuming that the waveguide losses are negligible, so as to make a worst-case analysis, the coupling efficiency of the single 2D-GC results to be equal to -3.75 dB, constituting, to the best of our knowledge, the lowest value ever reported for a fully CMOS compatible 2D-GC. It is worth noting that both the obtained values are in good agreement with those expected by the numerical simulations performed using full 3D analysis by Lumerical FDTD-solutions.

  1. Online analysis of oxygen inside silicon-glass microreactors with integrated optical sensors

    Ehgartner, Josef; Sulzer, Philipp; Burger, Tobias

    2016-01-01

    A powerful online analysis set-up for oxygen measurements within microfluidic devices is presented. It features integration of optical oxygen sensors into microreactors, which enables contactless, accurate and inexpensive readout using commercially available oxygen meters via luminescent lifetime...... monitoring of enzyme transformations, including d-alanine or d-phenylalanine oxidation by d-amino acid oxidase, and glucose oxidation by glucose oxidase....

  2. Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 6

    Roozeboom, F.; Narayanan, V.; Kakushima, K.; Timans, P.J.; Gusev, E.P.; Karim, Z.; Gendt, S. De

    2016-01-01

    The topics of this annual symposium continue to describe the evolution of traditional scaling in CMOS integrated circuit manufacturing (More Moore for short), combined with the opportunities from growing diversification and embedded functionality (More than Moore). Once again, the main objective was

  3. mm-Wave Wireless Communications based on Silicon Photonics Integrated Circuits

    Rommel, Simon; Heck, Martijn; Vegas Olmos, Juan José

    Hybrid photonic-wireless transmission schemes in the mm-wave frequency range are promising candidates to enable the multi-gigabit per second data communications required from wireless and mobile networks of the 5th and future generations. Photonic integration may pave the way to practical applica...

  4. The realization of an integrated Mach-Zehnder waveguide immunosensor in silicon technology

    Schipper, E.F.; Schipper, E.F.; Brugman, A.M.; Lechuga, L.M.; Lechuga, L.M.; Kooyman, R.P.H.; Greve, Jan; Dominguez, C.

    1997-01-01

    We describe the realization of a symmetric integrated channel waveguide Mach-Zehnder sensor which uses the evanescent field to detect small refractive-index changes (¿nmin ¿ 1 × 10¿4) near the guiding-layer surface. This guiding layer consists of ridge structures with a height of 3 nm and a width of

  5. Silicon Photonics Integrated Circuits for 5th Generation mm-Wave Wireless Communications

    Rommel, Simon; Vegas Olmos, Juan José; Tafur Monroy, Idelfonso

    Hybrid photonic-wireless transmission schemes in the mm-wave frequency are promising candidates to enable the multi-gigabit per second data communications required from wireless and mobile networks of the 5th and future generations. Photonic integration may pave the way to practical applicability...

  6. Integrated graphene based modulators enabled by interfacing plasmonic slot and silicon waveguides

    Xiao, Sanshui

    Graphene has offered a new paradigm for extremely fast and active optoelectronic devices due to its unique electronic and optical properties [1]. With the combination of high-index dielectric waveguides/resonators, several integrated graphene-based optical modulators have already been demonstrated...

  7. Modeling an array of encapsulated germanium detectors

    Kshetri, R

    2012-01-01

    A probability model has been presented for understanding the operation of an array of encapsulated germanium detectors generally known as composite detector. The addback mode of operation of a composite detector has been described considering the absorption and scattering of γ-rays. Considering up to triple detector hit events, we have obtained expressions for peak-to-total and peak-to-background ratios of the cluster detector, which consists of seven hexagonal closely packed encapsulated HPGe detectors. Results have been obtained for the miniball detectors comprising of three and four seven hexagonal closely packed encapsulated HPGe detectors. The formalism has been extended to the SPI spectrometer which is a telescope of the INTEGRAL satellite and consists of nineteen hexagonal closely packed encapsulated HPGe detectors. This spectrometer comprises of twelve detector modules surrounding the cluster detector. For comparison, we have considered a spectrometer comprising of nine detector modules surrounding the three detector configuration of miniball detector. In the present formalism, the operation of these sophisticated detectors could be described in terms of six probability amplitudes only. Using experimental data on relative efficiency and fold distribution of cluster detector as input, the fold distribution and the peak-to-total, peak-to-background ratios have been calculated for the SPI spectrometer and other composite detectors at 1332 keV. Remarkable agreement between experimental data and results from the present formalism has been observed for the SPI spectrometer.

  8. Oxygen Measurements in Liposome Encapsulated Hemoglobin

    Phiri, Joshua Benjamin

    Liposome encapsulated hemoglobins (LEH's) are of current interest as blood substitutes. An analytical methodology for rapid non-invasive measurements of oxygen in artificial oxygen carriers is examined. High resolution optical absorption spectra are calculated by means of a one dimensional diffusion approximation. The encapsulated hemoglobin is prepared from fresh defibrinated bovine blood. Liposomes are prepared from hydrogenated soy phosphatidylcholine (HSPC), cholesterol and dicetylphosphate using a bath sonication method. An integrating sphere spectrophotometer is employed for diffuse optics measurements. Data is collected using an automated data acquisition system employing lock-in -amplifiers. The concentrations of hemoglobin derivatives are evaluated from the corresponding extinction coefficients using a numerical technique of singular value decomposition, and verification of the results is done using Monte Carlo simulations. In situ measurements are required for the determination of hemoglobin derivatives because most encapsulation methods invariably lead to the formation of methemoglobin, a nonfunctional form of hemoglobin. The methods employed in this work lead to high resolution absorption spectra of oxyhemoglobin and other derivatives in red blood cells and liposome encapsulated hemoglobin (LEH). The analysis using singular value decomposition method offers a quantitative means of calculating the fractions of oxyhemoglobin and other hemoglobin derivatives in LEH samples. The analytical methods developed in this work will become even more useful when production of LEH as a blood substitute is scaled up to large volumes.

  9. Wafer-level integration of NiTi shape memory alloy on silicon using Au–Si eutectic bonding

    Gradin, Henrik; Bushra, Sobia; Braun, Stefan; Stemme, Göran; Van der Wijngaart, Wouter

    2013-01-01

    This paper reports on the wafer level integration of NiTi shape memory alloy (SMA) sheets with silicon substrates through Au–Si eutectic bonding. Different bond parameters, such as Au layer thicknesses and substrate surface treatments were evaluated. The amount of gold in the bond interface is the most important parameter to achieve a high bond yield; the amount can be determined by the barrier layers between the Au and Si or by the amount of Au deposition. Deposition of a gold layer of more than 1 μm thickness before bonding gives the most promising results. Through patterning of the SMA sheet and by limiting bonding to small areas, stresses created by the thermal mismatch between Si and NiTi are reduced. With a gold layer of 1 μm thickness and bond areas between 200 × 200 and 800 × 800 μm 2 a high bond strength and a yield above 90% is demonstrated. (paper)

  10. Design of a compact and integrated TM-rotated/TE-through polarization beam splitter for silicon-based slot waveguides.

    Xu, Yin; Xiao, Jinbiao

    2016-01-20

    A compact and integrated TM-rotated/TE-through polarization beam splitter for silicon-based slot waveguides is proposed and characterized. For the input TM mode, it is first transferred into the cross strip waveguide using a tapered directional coupler (DC), and then efficiently rotated to the corresponding TE mode using an L-shaped bending polarization rotator (PR). Finally, the TE mode for slot waveguide at the output end is obtained with the help of a strip-to-slot mode converter. By contrast, for the input TE mode, it almost passes through the slot waveguide directly and outputs at the bar end with nearly neglected coupling due to a large mode mismatch. Moreover, an additional S-bend connecting the tapered DC and bending PR is used to enhance the performance. Results show that a total device length of 19.6 μm is achieved, where the crosstalk (CT) and polarization conversion loss are, respectively -26.09 and 0.54 dB, for the TM mode, and the CT and insertion loss are, respectively, -22.21 and 0.41 dB, for the TE mode, both at 1.55 μm. The optical bandwidth is approximately 50 nm with a CT<-20  dB. In addition, fabrication tolerances and field evolution are also presented.

  11. Gold nanostructure-integrated silica-on-silicon waveguide for the detection of antibiotics in milk and milk products

    Ozhikandathil, Jayan; Badilescu, Simona; Packirisamy, Muthukumaran

    2012-10-01

    Antibiotics are extensively used in veterinary medicine for the treatment of infectious diseases. The use of antibiotics for the treatment of animals used for food production raised the concern of the public and a rapid screening method became necessary. A novel approach of detection of antibiotics in milk is reported in this work by using an immunoassay format and the Localized Surface Plasmon Resonance property of gold. An antibiotic from the penicillin family that is, ampicillin is used for testing. Gold nanostructures deposited on a glass substrate by a novel convective assembly method were heat-treated to form a nanoisland morphology. The Au nanostructures were functionalized and the corresponding antibody was absorbed from a solution. Solutions with known concentrations of antigen (antibiotics) were subsequently added and the spectral changes were monitored step by step. The Au LSPR band corresponding to the nano-island structure was found to be suitable for the detection of the antibody antigen interaction. The detection of the ampicillin was successfully demonstrated with the gold nano-islands deposited on glass substrate. This process was subsequently adapted for the integration of gold nanostructures on the silica-on-silicon waveguide for the purpose of detecting antibiotics.

  12. Integrated X-ray and charged particle active pixel CMOS sensor arrays using an epitaxial silicon sensitive region

    Kleinfelder, Stuart; Bichsel, Hans; Bieser, Fred; Matis, Howard S.; Rai, Gulshan; Retiere, Fabrice; Weiman, Howard; Yamamoto, Eugene

    2002-01-01

    Integrated CMOS Active Pixel Sensor (APS) arrays have been fabricated and tested using X-ray and electron sources. The 128 by 128 pixel arrays, designed in a standard 0.25 micron process, use a ∼10 micron epitaxial silicon layer as a deep detection region. The epitaxial layer has a much greater thickness than the surface features used by standard CMOS APS, leading to stronger signals and potentially better signal-to-noise ratio (SNR). On the other hand, minority carriers confined within the epitaxial region may diffuse to neighboring pixels, blur images and reduce peak signal intensity. But for low-rate, sparse-event images, centroid analysis of this diffusion may be used to increase position resolution. Careful trade-offs involving pixel size and sense-node area verses capacitance must be made to optimize overall performance. The prototype sensor arrays, therefore, include a range of different pixel designs, including different APS circuits and a range of different epitaxial layer contact structures. The fabricated arrays were tested with 1.5 GeV electrons and Fe-55 X-ray sources, yielding a measured noise of 13 electrons RMS and an SNR for single Fe-55 X-rays of greater than 38

  13. Encapsulation methods and dielectric layers for organic electrical devices

    Blum, Yigal D; Chu, William Siu-Keung; MacQueen, David Brent; Shi, Yijan

    2013-07-02

    The disclosure provides methods and materials suitable for use as encapsulation barriers and dielectric layers in electronic devices. In one embodiment, for example, there is provided an electroluminescent device or other electronic device with a dielectric layer comprising alternating layers of a silicon-containing bonding material and a ceramic material. The methods provide, for example, electronic devices with increased stability and shelf-life. The invention is useful, for example, in the field of microelectronic devices.

  14. Nonlinear silicon photonics

    Borghi, M.; Castellan, C.; Signorini, S.; Trenti, A.; Pavesi, L.

    2017-09-01

    Silicon photonics is a technology based on fabricating integrated optical circuits by using the same paradigms as the dominant electronics industry. After twenty years of fervid development, silicon photonics is entering the market with low cost, high performance and mass-manufacturable optical devices. Until now, most silicon photonic devices have been based on linear optical effects, despite the many phenomenologies associated with nonlinear optics in both bulk materials and integrated waveguides. Silicon and silicon-based materials have strong optical nonlinearities which are enhanced in integrated devices by the small cross-section of the high-index contrast silicon waveguides or photonic crystals. Here the photons are made to strongly interact with the medium where they propagate. This is the central argument of nonlinear silicon photonics. It is the aim of this review to describe the state-of-the-art in the field. Starting from the basic nonlinearities in a silicon waveguide or in optical resonator geometries, many phenomena and applications are described—including frequency generation, frequency conversion, frequency-comb generation, supercontinuum generation, soliton formation, temporal imaging and time lensing, Raman lasing, and comb spectroscopy. Emerging quantum photonics applications, such as entangled photon sources, heralded single-photon sources and integrated quantum photonic circuits are also addressed at the end of this review.

  15. Recent advance in high manufacturing readiness level and high temperature CMOS mixed-signal integrated circuits on silicon carbide

    Weng, M. H.; Clark, D. T.; Wright, S. N.; Gordon, D. L.; Duncan, M. A.; Kirkham, S. J.; Idris, M. I.; Chan, H. K.; Young, R. A. R.; Ramsay, E. P.; Wright, N. G.; Horsfall, A. B.

    2017-05-01

    A high manufacturing readiness level silicon carbide (SiC) CMOS technology is presented. The unique process flow enables the monolithic integration of pMOS and nMOS transistors with passive circuit elements capable of operation at temperatures of 300 °C and beyond. Critical to this functionality is the behaviour of the gate dielectric and data for high temperature capacitance-voltage measurements are reported for SiO2/4H-SiC (n and p type) MOS structures. In addition, a summary of the long term reliability for a range of structures including contact chains to both n-type and p-type SiC, as well as simple logic circuits is presented, showing function after 2000 h at 300 °C. Circuit data is also presented for the performance of digital logic devices, a 4 to 1 analogue multiplexer and a configurable timer operating over a wide temperature range. A high temperature micro-oven system has been utilised to enable the high temperature testing and stressing of units assembled in ceramic dual in line packages, including a high temperature small form-factor SiC based bridge leg power module prototype, operated for over 1000 h at 300 °C. The data presented show that SiC CMOS is a key enabling technology in high temperature integrated circuit design. In particular it provides the ability to realise sensor interface circuits capable of operating above 300 °C, accommodate shifts in key parameters enabling deployment in applications including automotive, aerospace and deep well drilling.

  16. Silicon-based horizontal nanoplasmonic slot waveguides for on-chip integration.

    Zhu, Shiyang; Liow, T Y; Lo, G Q; Kwong, D L

    2011-04-25

    Horizontal metal/insulator/Si/insulator/metal nanoplasmonic slot waveguide (PWG), which is inserted in a conventional Si wire waveguide, is fabricated using the standard Si-CMOS technology. A thin insulator between the metal and the Si core plays a key role: it not only increases the propagation distance as the theoretical prediction, but also prevents metal diffusion and/or metal-Si reaction. Cu-PWGs with the Si core width of ~134-21 nm and ~12-nm-thick SiO2 on each side exhibit a relatively low propagation loss of ~0.37-0.63 dB/µm around the telecommunication wavelength of 1550 nm, which is ~2.6 times smaller than the Al-counterparts. A simple tapered coupler can provide an effective coupling between the PWG and the conventional Si wire waveguide. The coupling efficiency as high as ~0.1-0.4 dB per facet is measured. The PWG allows a sharp bending. The pure bending loss of a Cu-PWG direct 90° bend is measured to be ~0.6-1.0 dB. These results indicate the potential for seamless integration of various functional nanoplasmonic devices in existing Si electronic photonic integrated circuits (Si-EPICs).

  17. Thin SiGe virtual substrates for Ge heterostructures integration on silicon

    Cecchi, S.; Chrastina, D.; Frigerio, J.; Isella, G.; Gatti, E.; Guzzi, M.; Müller Gubler, E.; Paul, D. J.

    2014-01-01

    The possibility to reduce the thickness of the SiGe virtual substrate, required for the integration of Ge heterostructures on Si, without heavily affecting the crystal quality is becoming fundamental in several applications. In this work, we present 1 μm thick Si 1−x Ge x buffers (with x > 0.7) having different designs which could be suitable for applications requiring a thin virtual substrate. The rationale is to reduce the lattice mismatch at the interface with the Si substrate by introducing composition steps and/or partial grading. The relatively low growth temperature (475 °C) makes this approach appealing for complementary metal-oxide-semiconductor integration. For all the investigated designs, a reduction of the threading dislocation density compared to constant composition Si 1−x Ge x layers was observed. The best buffer in terms of defects reduction was used as a virtual substrate for the deposition of a Ge/SiGe multiple quantum well structure. Room temperature optical absorption and photoluminescence analysis performed on nominally identical quantum wells grown on both a thick graded virtual substrate and the selected thin buffer demonstrates a comparable optical quality, confirming the effectiveness of the proposed approach

  18. Silicon based cryogenic platform for the integration of qubit and classical control chips

    Leonhardt, T.; Hollmann, A.; Jirovec, D.; Neumann, R.; Klemt, B.; Kindel, S.; Kucharski, M.; Fischer, G.; Bougeard, D.; Bluhm, H.; Schreiber, L. R.

    Electrostatically confined electron-spin-qubits proved viable for quantum information processing. Yet their up-scaling not only demands improvement of physical qubits, but also the development and cryogenic integration of classical control hardware. Therefore, we created a platform to integrate quantum chips and classical electronics. These multilayer interposer chips incorporate passive circuit elements, high bandwidth coplanar wave guides and interconnects for electron spin resonant qubit control as well as low impedance DC microstrips reducing EM-crosstalk from AC to DC lines. We used the interposer for measurements of a Si/SiGe quantum dot at 30 mK. We also characterized a commercial voltage controlled oszillator (VCO) based on hetero-bipolar transistors. Tunable about 30 GHz it is ideal for electron spin resonant qubit control. Cooled from 300 to 4 K it exhibits a slightly increased output power and frequency, while the phase noise level is constant. The device remains functional up to magnetic fields of 6 T.

  19. Synthesis of highly integrated optical network based on microdisk-resonator add-drop filters in silicon-on-insulator technology

    Kaźmierczak, Andrzej; Dortu, Fabian; Giannone, Domenico; Bogaerts, Wim; Drouard, Emmanuel; Rojo-Romeo, Pedro; Gaffiot, Frederic

    2009-10-01

    We analyze a highly compact optical add-drop filter topology based on a pair of microdisk resonators and a bus waveguide intersection. The filter is further assessed on an integrated optical 4×4 network for optical on-chip communication. The proposed network structure, as compact as 50×50 μm, is fabricated in a CMOS-compatible process on a silicon-on-insulator (SOI) substrate. Finally, the experimental results demonstrate the proper operation of the fabricated devices.

  20. Selective encapsulation by Janus particles

    Li, Wei, E-mail: wel208@mrl.ucsb.edu [Materials Research Laboratory, University of California, Santa Barbara, California 93106 (United States); Ruth, Donovan; Gunton, James D. [Department of Physics, Lehigh University, Bethlehem, Pennsylvania 18015 (United States); Rickman, Jeffrey M. [Department of Physics, Lehigh University, Bethlehem, Pennsylvania 18015 (United States); Department of Materials Science and Engineering, Lehigh University, Bethlehem, Pennsylvania 18015 (United States)

    2015-06-28

    We employ Monte Carlo simulation to examine encapsulation in a system comprising Janus oblate spheroids and isotropic spheres. More specifically, the impact of variations in temperature, particle size, inter-particle interaction range, and strength is examined for a system in which the spheroids act as the encapsulating agents and the spheres as the encapsulated guests. In this picture, particle interactions are described by a quasi-square-well patch model. This study highlights the environmental adaptation and selectivity of the encapsulation system to changes in temperature and guest particle size, respectively. Moreover, we identify an important range in parameter space where encapsulation is favored, as summarized by an encapsulation map. Finally, we discuss the generalization of our results to systems having a wide range of particle geometries.

  1. Monitoring the performance of single and triple junction amorphous silicon modules in two building integrated photovoltaic (BIPV) installations

    Eke, Rustu; Senturk, Ali

    2013-01-01

    Highlights: • The first and the largest BIPV of Turkey were installed. • Single and triple junction amorphous module performances in BIPV applications are analyzed. • Total generated electricity of the BIPV system is measured as 103,702 kW h for 36 months of operation. • Annual energy rating is calculated as 856 kW h/kWp for a non-optimally oriented plant. • The PR of the system is found 0.74 and 0.81 for PV systems on towers and facade respectively. - Abstract: Mugla is located in south west Turkey at 37°13′N latitude and 28°36′E longitude with yearly sum of horizontal global irradiation exceeding 1700 kW h per square meter. Mugla has a Mediterranean Climate which is characterized by long, hot and dry summers with cool and wet winters. Mugla Sıtkı Kocman University is the largest “PV Park” in Turkey consisting of 100 kWp installed Photovoltaic Power Systems (PVPSs) with different PV applications. The 40 kWp building integrated photovoltaic (BIPV) system which is the first and largest in Turkey was installed on the façade and the two towers of the “Staff Block of the Education Faculty’s Building” of Mugla Sıtkı Kocman University in February 2008. Triple junction amorphous silicon photovoltaic modules are used on the façade and single junction amorphous silicon PV modules are used on the East and West towers of the building. In this paper, the 40 kWp BIPV system in Mugla, Turkey is presented, and its performance is evaluated. Energy rating (kW h/kWp energy yield), efficiencies and performance ratios of both applications are also evaluated for 36 months of operation. Daily, monthly and seasonal variations in performance parameters of the BIPV system in relation to solar data and meteorological parameters and outdoor performance of two reference modules (representing the modules on façade and towers) in a summer and a winter day are also investigated

  2. Mechanical integrity of a carbon nanotube/copper-based through-silicon via for 3D integrated circuits: a multi-scale modeling approach.

    Awad, Ibrahim; Ladani, Leila

    2015-12-04

    Carbon nanotube (CNT)/copper (Cu) composite material is proposed to replace Cu-based through-silicon vias (TSVs) in micro-electronic packages. The proposed material is believed to offer extraordinary mechanical and electrical properties and the presence of CNTs in Cu is believed to overcome issues associated with miniaturization of Cu interconnects, such as electromigration. This study introduces a multi-scale modeling of the proposed TSV in order to evaluate its mechanical integrity under mechanical and thermo-mechanical loading conditions. Molecular dynamics (MD) simulation was used to determine CNT/Cu interface adhesion properties. A cohesive zone model (CZM) was found to be most appropriate to model the interface adhesion, and CZM parameters at the nanoscale were determined using MD simulation. CZM parameters were then used in the finite element analysis in order to understand the mechanical and thermo-mechanical behavior of composite TSV at micro-scale. From the results, CNT/Cu separation does not take place prior to plastic deformation of Cu in bending, and separation does not take place when standard thermal cycling is applied. Further investigation is recommended in order to alleviate the increased plastic deformation in Cu at the CNT/Cu interface in both loading conditions.

  3. III-V/Active-Silicon Integration for Low-Cost High-Performance Concentrator Photovoltaics

    Ringel, Steven [The Ohio State Univ., Columbus, OH (United States); Carlin, John A [The Ohio State Univ., Columbus, OH (United States); Grassman, Tyler [The Ohio State Univ., Columbus, OH (United States)

    2018-04-17

    This FPACE project was motivated by the need to establish the foundational pathway to achieve concentrator solar cell efficiencies greater than 50%. At such an efficiency, DOE modeling projected that a III-V CPV module cost of $0.50/W or better could be achieved. Therefore, the goal of this project was to investigate, develop and advance a III-V/Si mulitjunction (MJ) CPV technology that can simultaneously address the primary cost barrier for III-V MJ solar cells while enabling nearly ideal MJ bandgap profiles that can yield efficiencies in excess of 50% under concentrated sunlight. The proposed methodology was based on use of our recently developed GaAsP metamorphic graded buffer as a pathway to integrate unique GaAsP and Ga-rich GaInP middle and top junctions having bandgaps that are adjustable between 1.45 – 1.65 eV and 1.9 – 2.1 eV, respectively, with an underlying, 1.1 eV active Si subcell/substrate. With this design, the Si can be an active component sub-cell due to the semi-transparent nature of the GaAsP buffer with respect to Si as well as a low-cost alternative substrate that is amenable to scaling with existing Si foundry infrastructure, providing a reduction in materials cost and a low cost path to manufacturing at scale. By backside bonding of a SiGe, a path to exceed 50% efficiency is possible. Throughout the course of this effort, an expansive range of new understanding was achieved that has stimulated worldwide efforts in III-V/Si PV R&D that spanned materials development, metamorphic device optimization, and complete III-V/Si monolithic integration. Highlights include the demonstration of the first ideal GaP/Si interfaces grown by industry-standard MOCVD processes, the first high performance metamorphic tunnel junctions designed for III-V/Si integration, record performance of specific metamorphic sub-cell designs, the first fully integrated GaInP/GaAsP/Si double (1.7 eV/1.1 eV) and triple (1.95 eV/1.5 eV/1.1 eV) junction solar cells, the first

  4. Prolonged 500 C Operation of 100+ Transistor Silicon Carbide Integrated Circuits

    Spry, David J.; Neudeck, Philip G.; Lukco, Dorothy; Chen, Liangyu; Krasowski, Michael J.; Prokop, Norman F.; Chang, Carl W.; Beheim, Glenn M.

    2017-01-01

    This report describes more than 5000 hours of successful 500 C operation of semiconductor integrated circuits (ICs) with more than 100 transistors. Multiple packaged chips with two different 4H-SiC junction field effect transistor (JFET) technology demonstrator circuits have surpassed thousands of hours of oven-testing at 500 C. After 100 hours of 500 C burn-in, the circuits (except for 2 failures) exhibit less than 10 change in output characteristics for the remainder of 500C testing. We also describe the observation of important differences in IC materials durability when subjected to the first nine constituents of Venus-surface atmosphere at 9.4 MPa and 460C in comparison to what is observed for Earth-atmosphere oven testing at 500 C.

  5. Investigation of properties of novel silicon pixel assemblies employing thin n-in-p sensors and 3D-integration

    Weigell, Philipp

    2013-01-01

    Until the end of the 2020 decade the LHC programme will be defining the high energy frontier of particle physics. During this time, three upgrade steps of the accelerator are currently planned to further increase the luminosity and energy reach. In the course of these upgrades the specifications of several parts of the current LHC detectors will be exceeded. Especially, the innermost tracking detectors are challenged by the increasing track densities and the radiation damage. This thesis focuses on the implications for the ATLAS experiment. Here, around 2021/2, after having collected an integrated luminosity of around 300 fb -1 , the silicon and gas detector components of the inner tracker will reach the end of their lifetime and will need to be replaced to ensure sufficient performance for continued running - especially if the luminosity is raised to about 5 x 10 35 cm -2 s -1 as currently planned. An all silicon inner detector is foreseen to be installed. This upgrade demands cost effective pixel assemblies with a minimal material budget, a larger active area fraction as compared to the current detectors, and a higher granularity. Furthermore, the assemblies must be able to withstand received fluences up to 2 . 10 16 n eq /cm 2 . A new pixel assembly concept answering the challenges posed by the high instantaneous luminosities is investigated in this thesis. It employs five novel technologies, namely n-in-p pixel sensors, thin pixel sensors, slim edges with or without implanted sensor sides, and 3D-integration incorporating a new interconnection technology, named Solid Liquid InterDiffusion (SLID) as well as Inter-Chip-Vias (ICVs). n-in-p sensors are cost-effective, since they only need patterned processing on one side. Their performance before and after irradiation is investigated and compared to results obtained with currently used n-in-n sensors. Reducing the thickness of the sensors lowers the amount of multiple scattering within the tracking system and leads

  6. Investigation of properties of novel silicon pixel assemblies employing thin n-in-p sensors and 3D-integration

    Weigell, Philipp

    2013-01-15

    Until the end of the 2020 decade the LHC programme will be defining the high energy frontier of particle physics. During this time, three upgrade steps of the accelerator are currently planned to further increase the luminosity and energy reach. In the course of these upgrades the specifications of several parts of the current LHC detectors will be exceeded. Especially, the innermost tracking detectors are challenged by the increasing track densities and the radiation damage. This thesis focuses on the implications for the ATLAS experiment. Here, around 2021/2, after having collected an integrated luminosity of around 300 fb{sup -1}, the silicon and gas detector components of the inner tracker will reach the end of their lifetime and will need to be replaced to ensure sufficient performance for continued running - especially if the luminosity is raised to about 5 x 10{sup 35} cm{sup -2}s{sup -1} as currently planned. An all silicon inner detector is foreseen to be installed. This upgrade demands cost effective pixel assemblies with a minimal material budget, a larger active area fraction as compared to the current detectors, and a higher granularity. Furthermore, the assemblies must be able to withstand received fluences up to 2 . 10{sup 16} n{sub eq}/cm{sup 2}. A new pixel assembly concept answering the challenges posed by the high instantaneous luminosities is investigated in this thesis. It employs five novel technologies, namely n-in-p pixel sensors, thin pixel sensors, slim edges with or without implanted sensor sides, and 3D-integration incorporating a new interconnection technology, named Solid Liquid InterDiffusion (SLID) as well as Inter-Chip-Vias (ICVs). n-in-p sensors are cost-effective, since they only need patterned processing on one side. Their performance before and after irradiation is investigated and compared to results obtained with currently used n-in-n sensors. Reducing the thickness of the sensors lowers the amount of multiple scattering

  7. Ka-band to L-band frequency down-conversion based on III-V-on-silicon photonic integrated circuits

    Van Gasse, K.; Wang, Z.; Uvin, S.; De Deckere, B.; Mariën, J.; Thomassen, L.; Roelkens, G.

    2017-12-01

    In this work, we present the design, simulation and characterization of a frequency down-converter based on III-V-on-silicon photonic integrated circuit technology. We first demonstrate the concept using commercial discrete components, after which we demonstrate frequency conversion using an integrated mode-locked laser and integrated modulator. In our experiments, five channels in the Ka-band (27.5-30 GHz) with 500 MHz bandwidth are down-converted to the L-band (1.5 GHz). The breadboard demonstration shows a conversion efficiency of - 20 dB and a flat response over the 500 MHz bandwidth. The simulation of a fully integrated circuit indicates that a positive conversion gain can be obtained on a millimeter-sized photonic integrated circuit.

  8. Silicone metalization

    Maghribi, Mariam N. (Livermore, CA); Krulevitch, Peter (Pleasanton, CA); Hamilton, Julie (Tracy, CA)

    2008-12-09

    A system for providing metal features on silicone comprising providing a silicone layer on a matrix and providing a metal layer on the silicone layer. An electronic apparatus can be produced by the system. The electronic apparatus comprises a silicone body and metal features on the silicone body that provide an electronic device.

  9. Sputtered Encapsulation as Wafer Level Packaging for Isolatable MEMS Devices: A Technique Demonstrated on a Capacitive Accelerometer

    Azrul Azlan Hamzah

    2008-11-01

    Full Text Available This paper discusses sputtered silicon encapsulation as a wafer level packaging approach for isolatable MEMS devices. Devices such as accelerometers, RF switches, inductors, and filters that do not require interaction with the surroundings to function, could thus be fully encapsulated at the wafer level after fabrication. A MEMSTech 50g capacitive accelerometer was used to demonstrate a sputtered encapsulation technique. Encapsulation with a very uniform surface profile was achieved using spin-on glass (SOG as a sacrificial layer, SU-8 as base layer, RF sputtered silicon as main structural layer, eutectic gold-silicon as seal layer, and liquid crystal polymer (LCP as outer encapsulant layer. SEM inspection and capacitance test indicated that the movable elements were released after encapsulation. Nanoindentation test confirmed that the encapsulated device is sufficiently robust to withstand a transfer molding process. Thus, an encapsulation technique that is robust, CMOS compatible, and economical has been successfully developed for packaging isolatable MEMS devices at the wafer level.

  10. Update on cellular encapsulation.

    Smith, Kate E; Johnson, Robert C; Papas, Klearchos K

    2018-05-06

    There is currently a significant disparity between the number of patients who need lifesaving transplants and the number of donated human organs. Xenotransplantation is a way to address this disparity and attempts to enable the use of xenogeneic tissues have persisted for centuries. While immunologic incompatibilities have presented a persistent impediment to their use, encapsulation may represent a way forward for the use of cell-based xenogeneic therapeutics without the need for immunosuppression. In conjunction with modern innovations such as the use of bioprinting, incorporation of immune modulating molecules into capsule membranes, and genetic engineering, the application of xenogeneic cells to treat disorders ranging from pain to liver failure is becoming increasingly realistic. The present review discusses encapsulation in the context of xenotransplantation, focusing on the current status of clinical trials, persistent issues such as antigen shedding, oxygen availability, and donor selection, and recent developments that may address these limitations. © 2018 John Wiley & Sons A/S. Published by John Wiley & Sons Ltd.

  11. Swedish encapsulation station review

    Andersson, Sven Olof; Brunzell, P.; Heibel, R.; McCarthy, J.; Pennington, C.; Rusch, C.; Varley, G.

    1998-06-01

    In the Encapsulation Station (ES) Review performed by NAC International, a number of different areas have been studied. The main objectives with the review have been to: Perform an independent review of the cost estimates for the ES presented in SKB's document 'Plan 1996'. This has been made through comparisons between the ES and BNFL's Waste Encapsulation Plant (WEP) at Sellafield as well as with the CLAB facility. Review the location of the ES (at the CLAB site or at the final repository) and its interaction with other parts of the Swedish system for spent fuel management. Review the logistics and plant capacity of the ES. Identify important safety aspects of the ES as a basis for future licensing activities. Based on NAC International's experience of casks for transport and storage of spent fuel, review the basic design of the copper/steel canister and the transport cask. This review insides design, manufacturing, handling and licensing aspects. Perform an overall comparison between the ES project and the CLAB project with the objective to identify major project risks and discuss their mitigation

  12. Swedish encapsulation station review

    Andersson, Sven Olof; Brunzell, P.; Heibel, R.; McCarthy, J.; Pennington, C.; Rusch, C.; Varley, G. [NAC International, Zuerich (Switzerland)

    1998-06-01

    In the Encapsulation Station (ES) Review performed by NAC International, a number of different areas have been studied. The main objectives with the review have been to: Perform an independent review of the cost estimates for the ES presented in SKB`s document `Plan 1996`. This has been made through comparisons between the ES and BNFL`s Waste Encapsulation Plant (WEP) at Sellafield as well as with the CLAB facility. Review the location of the ES (at the CLAB site or at the final repository) and its interaction with other parts of the Swedish system for spent fuel management. Review the logistics and plant capacity of the ES. Identify important safety aspects of the ES as a basis for future licensing activities. Based on NAC International`s experience of casks for transport and storage of spent fuel, review the basic design of the copper/steel canister and the transport cask. This review insides design, manufacturing, handling and licensing aspects. Perform an overall comparison between the ES project and the CLAB project with the objective to identify major project risks and discuss their mitigation 19 refs, 9 figs, 35 tabs

  13. Performance prediction for silicon photonics integrated circuits with layout-dependent correlated manufacturing variability.

    Lu, Zeqin; Jhoja, Jaspreet; Klein, Jackson; Wang, Xu; Liu, Amy; Flueckiger, Jonas; Pond, James; Chrostowski, Lukas

    2017-05-01

    This work develops an enhanced Monte Carlo (MC) simulation methodology to predict the impacts of layout-dependent correlated manufacturing variations on the performance of photonics integrated circuits (PICs). First, to enable such performance prediction, we demonstrate a simple method with sub-nanometer accuracy to characterize photonics manufacturing variations, where the width and height for a fabricated waveguide can be extracted from the spectral response of a racetrack resonator. By measuring the spectral responses for a large number of identical resonators spread over a wafer, statistical results for the variations of waveguide width and height can be obtained. Second, we develop models for the layout-dependent enhanced MC simulation. Our models use netlist extraction to transfer physical layouts into circuit simulators. Spatially correlated physical variations across the PICs are simulated on a discrete grid and are mapped to each circuit component, so that the performance for each component can be updated according to its obtained variations, and therefore, circuit simulations take the correlated variations between components into account. The simulation flow and theoretical models for our layout-dependent enhanced MC simulation are detailed in this paper. As examples, several ring-resonator filter circuits are studied using the developed enhanced MC simulation, and statistical results from the simulations can predict both common-mode and differential-mode variations of the circuit performance.

  14. Optical Characterization of Tissue Phantoms Using a Silicon Integrated fdNIRS System on Chip.

    Sthalekar, Chirag C; Miao, Yun; Koomson, Valencia Joyner

    2017-04-01

    An interface circuit with signal processing and digitizing circuits for a high frequency, large area avalanche photodiode (APD) has been integrated in a 130 nm BiCMOS chip. The system enables the absolute oximetry of tissue using frequency domain Near Infrared Spectroscopy (fdNIRS). The system measures the light absorbed and scattered by the tissue by measuring the reduction in the amplitude of signal and phase shift introduced between the light source and detector which are placed a finite distance away from each other. The received 80 MHz RF signal is downconverted to a low frequency and amplified using a heterodyning scheme. The front-end transimpedance amplifier has a 3-level programmable gain that increases the dynamic range to 60 dB. The phase difference between an identical reference channel and the optical channel is measured with a 0.5° accuracy. The detectable current range is [Formula: see text] and with a 40 A/W reponsivity using the APD, power levels as low as 500 pW can be detected. Measurements of the absorption and reduced scattering coefficients of solid tissue phantoms using this system are compared with those using a commercial instrument with differences within 30%. Measurement of a milk based liquid tissue phantom show an increase in absorption coefficient with addition of black ink. The miniaturized circuit serves as an efficiently scalable system for multi-site detection for applications in neonatal cerebral oximetry and optical mammography.

  15. Wafer scale integration of catalyst dots into nonplanar microsystems

    Gjerde, Kjetil; Kjelstrup-Hansen, Jakob; Gammelgaard, Lauge

    2007-01-01

    In order to successfully integrate bottom-up fabricated nanostructures such as carbon nanotubes or silicon, germanium, or III-V nanowires into microelectromechanical systems on a wafer scale, reliable ways of integrating catalyst dots are needed. Here, four methods for integrating sub-100-nm...... diameter nickel catalyst dots on a wafer scale are presented and compared. Three of the methods are based on a p-Si layer utilized as an in situ mask, an encapsulating layer, and a sacrificial window mask, respectively. All methods enable precise positioning of nickel catalyst dots at the end...

  16. Silicon CMOS optical receiver circuits with integrated thin-film compound semiconductor detectors

    Brooke, Martin A.; Lee, Myunghee; Jokerst, Nan Marie; Camperi-Ginestet, C.

    1995-04-01

    While many circuit designers have tackled the problem of CMOS digital communications receiver design, few have considered the problem of circuitry suitable for an all CMOS digital IC fabrication process. Faced with a high speed receiver design the circuit designer will soon conclude that a high speed analog-oriented fabrication process provides superior performance advantages to a digital CMOS process. However, for applications where there are overwhelming reasons to integrate the receivers on the same IC as large amounts of conventional digital circuitry, the low yield and high cost of the exotic analog-oriented fabrication is no longer an option. The issues that result from a requirement to use a digital CMOS IC process cut across all aspects of receiver design, and result in significant differences in circuit design philosophy and topology. Digital ICs are primarily designed to yield small, fast CMOS devices for digital logic gates, thus no effort is put into providing accurate or high speed resistances, or capacitors. This lack of any reliable resistance or capacitance has a significant impact on receiver design. Since resistance optimization is not a prerogative of the digital IC process engineer, the wisest option is thus to not use these elements, opting instead for active circuitry to replace the functions normally ascribed to resistance and capacitance. Depending on the application receiver noise may be a dominant design constraint. The noise performance of CMOS amplifiers is different than bipolar or GaAs MESFET circuits, shot noise is generally insignificant when compared to channel thermal noise. As a result the optimal input stage topology is significantly different for the different technologies. It is found that, at speeds of operation approaching the limits of the digital CMOS process, open loop designs have noise-power-gain-bandwidth tradeoff performance superior to feedback designs. Furthermore, the lack of good resisters and capacitors

  17. Thermal and optical performance of encapsulation systems for flat-plate photovoltaic modules

    Minning, C. P.; Coakley, J. F.; Perrygo, C. M.; Garcia, A., III; Cuddihy, E. F.

    1981-01-01

    The electrical power output from a photovoltaic module is strongly influenced by the thermal and optical characteristics of the module encapsulation system. Described are the methodology and computer model for performing fast and accurate thermal and optical evaluations of different encapsulation systems. The computer model is used to evaluate cell temperature, solar energy transmittance through the encapsulation system, and electric power output for operation in a terrestrial environment. Extensive results are presented for both superstrate-module and substrate-module design schemes which include different types of silicon cell materials, pottants, and antireflection coatings.

  18. Silicon photonic integrated circuit swept-source optical coherence tomography receiver with dual polarization, dual balanced, in-phase and quadrature detection.

    Wang, Zhao; Lee, Hsiang-Chieh; Vermeulen, Diedrik; Chen, Long; Nielsen, Torben; Park, Seo Yeon; Ghaemi, Allan; Swanson, Eric; Doerr, Chris; Fujimoto, James

    2015-07-01

    Optical coherence tomography (OCT) is a widely used three-dimensional (3D) optical imaging method with many biomedical and non-medical applications. Miniaturization, cost reduction, and increased functionality of OCT systems will be critical for future emerging clinical applications. We present a silicon photonic integrated circuit swept-source OCT (SS-OCT) coherent receiver with dual polarization, dual balanced, in-phase and quadrature (IQ) detection. We demonstrate multiple functional capabilities of IQ polarization resolved detection including: complex-conjugate suppressed full-range OCT, polarization diversity detection, and polarization-sensitive OCT. To our knowledge, this is the first demonstration of a silicon photonic integrated receiver for OCT. The integrated coherent receiver provides a miniaturized, low-cost solution for SS-OCT, and is also a key step towards a fully integrated high speed SS-OCT system with good performance and multi-functional capabilities. With further performance improvement and cost reduction, photonic integrated technology promises to greatly increase penetration of OCT systems in existing applications and enable new applications.

  19. The significance of strength of silicon carbide for the mechanical integrity of coated fuel particles for HTRs

    Bongartz, K.; Scheer, A.; Schuster, H.; Taeuber, K.

    1975-01-01

    Silicon carbide (SiC) and pyrocarbon are used as coating material for the HTR fuel particles. The PyC shell having a certain strength acts as a pressure vessel for the fission gases whereas the SiC shell has to retain the solid fission products in the fuel kernel. For measuring the strength of coating material the so-called Brittle Ring Test was developed. Strength and Young's modulus can be measured simultaneously with this method on SiC or PyC rings prepared out of the coating material of real fuel particles. The strength measured on the ring under a certain stress distribution which is characteristic for this method is transformed with the aid of the Weibull formalism for brittle fracture into the equivalent strength of the spherical coating shell on the fuel particle under uniform stress caused by the fission gas pressure. The values measured for the strength of the SiC were high (400-700MN/m 2 ), it could therefore be assumed that a SiC layer might contribute significantly also to the mechanical strength of the fuel coating. This assumption was confirmed by an irradiation test on coated particles with PyC-SiC-PyC coatings. There were several particles with all PyC layers broken during the irradiation, whereas the SiC layers remained intact having to withstand the fission gas pressure alone. This fact can only be explained assuming that the strength of the SiC is within the range of the values measured with the brittle ring test. The result indicates that, in optimising the coating of a fuel particle, the PyC layers of a multilayer coating should be considered alone as prospective layers for the SiC. The SiC shell, besides acting as a fission product barrier, is then also responsible for the mechanical integrity of the particle

  20. Lanthanide-Assisted Deposition of Strongly Electro-optic PZT Thin Films on Silicon: Toward Integrated Active Nanophotonic Devices.

    George, J P; Smet, P F; Botterman, J; Bliznuk, V; Woestenborghs, W; Van Thourhout, D; Neyts, K; Beeckman, J

    2015-06-24

    The electro-optical properties of lead zirconate titanate (PZT) thin films depend strongly on the quality and crystallographic orientation of the thin films. We demonstrate a novel method to grow highly textured PZT thin films on silicon using the chemical solution deposition (CSD) process. We report the use of ultrathin (5-15 nm) lanthanide (La, Pr, Nd, Sm) based intermediate layers for obtaining preferentially (100) oriented PZT thin films. X-ray diffraction measurements indicate preferentially oriented intermediate Ln2O2CO3 layers providing an excellent lattice match with the PZT thin films grown on top. The XRD and scanning electron microscopy measurements reveal that the annealed layers are dense, uniform, crack-free and highly oriented (>99.8%) without apparent defects or secondary phases. The EDX and HRTEM characterization confirm that the template layers act as an efficient diffusion barrier and form a sharp interface between the substrate and the PZT. The electrical measurements indicate a dielectric constant of ∼650, low dielectric loss of ∼0.02, coercive field of 70 kV/cm, remnant polarization of 25 μC/cm(2), and large breakdown electric field of 1000 kV/cm. Finally, the effective electro-optic coefficients of the films are estimated with a spectroscopic ellipsometer measurement, considering the electric field induced variations in the phase reflectance ratio. The electro-optic measurements reveal excellent linear effective pockels coefficients of 110 to 240 pm/V, which makes the CSD deposited PZT thin film an ideal candidate for Si-based active integrated nanophotonic devices.

  1. Process for encapsulating radionuclides

    Brownell, L.E.; Isaacson, R.E.

    1976-01-01

    Radionuclides are immobilized in virtually an insoluble form by reacting at a temperature of at least 90 0 C as an aqueous alkaline mixture having a solution pH of at least 10, containing a source of silicon, the radionuclide waste, and a metal cation. The molar ratio of silicon to the metal cation is on the order of unity to produce a gel from which complex metalosilicates crystallize to entrap the radionuclides within the resultant condensed crystal lattice. The product is a silicious stone-like material which is virtually insoluble and nonleachable in alkaline or neutral environment. One embodiment provides for the formation of the complex metalo-silicates, such as synthetic pollucite, by gel formation with subsequent calcination to the solid product; another embodiment utilizes a hydrothermal process, either above ground or deep within basalt caverns, at greater than atmospheric pressures and a temperature between 90 and 500 0 C to form complex metalo-silicates, such as strontium aluminosilicate. Another embodiment provides for the formation of complex metalo-silicates, such as synthetic pollucite, by slurrying an alkaline mixture of bentonite or kaolinite with a source of silicon and the radionuclide waste in salt form. In each of the embodiments a mobile system is achieved whereby the metalo-silicate constituents reorient into a condensed crystal lattice forming a cage structure with the condensed metalo-silicate lattice which completely surrounds the radionuclide and traps the radionuclide therein; thus rendering the radionuclide virtually insoluble

  2. Micro-Encapsulation of Probiotics

    Meiners, Jean-Antoine

    Micro-encapsulation is defined as the technology for packaging with the help of protective membranes particles of finely ground solids, droplets of liquids or gaseous materials in small capsules that release their contents at controlled rates over prolonged periods of time under the influences of specific conditions (Boh, 2007). The material encapsulating the core is referred to as coating or shell.

  3. Encapsulation of Clay Platelets inside Latex Particles

    Voorn, D.J.; Ming, W.; Herk, van A.M.; Fernando, R.H.; Sung, Li-Piin

    2009-01-01

    We present our recent attempts in encapsulating clay platelets inside latex particles by emulsion polymerization. Face modification of clay platelets by cationic exchange has been shown to be insufficient for clay encapsulation, leading to armored latex particles. Successful encapsulation of

  4. Palisaded encapsulated neuroma

    Adesh S Manchanda

    2015-01-01

    Full Text Available Palisaded encapsulated neuroma (PEN is a benign cutaneous or mucosal neural tumor which, usually, presents as a solitary, firm, asymptomatic, papule or nodule showing striking predilection for the face. It occurs commonly in middle age, and there is no sex predilection. Oral PEN are not common, and these lesions must be distinguished from other peripheral nerve sheath tumors such as the neurofibroma, neurilemma (schwannoma, and traumatic neuroma. The major challenge in dealing with lesions of PEN is to avoid the misdiagnosis of neural tumors that may be associated with systemic syndromes such as neurofibromatosis and multiple endocrine neoplasia syndrome type 2B. Here, we present a case of benign PEN of the gingiva in the left anterior mandibular region, laying importance on immunohistochemical staining in diagnosing such lesions.

  5. Encapsulated scintillation detector

    Toepke, I.L.

    1982-01-01

    A scintillation detector crystal is encapsulated in a hermetically sealed housing having a glass window. The window may be mounted in a ring by a compression seal formed during cooling of the ring and window after heating. The window may be chemically bonded to the ring with or without a compression seal. The ring is welded to the housing along thin weld flanges to reduce the amount of weld heat which must be applied. A thin section is provided to resist the flow of welding heat to the seal between the ring and the window thereby forming a thermal barrier. The thin section may be provided by a groove cut partially through the wall of the ring. A layer of PTFE between the tubular body and the crystal minimizes friction created by thermal expansion. Spring washers urge the crystal towards the window. (author)

  6. Liposome-encapsulated chemotherapy

    Børresen, B.; Hansen, A. E.; Kjær, A.

    2018-01-01

    Cytotoxic drugs encapsulated into liposomes were originally designed to increase the anticancer response, while minimizing off-target adverse effects. The first liposomal chemotherapeutic drug was approved for use in humans more than 20years ago, and the first publication regarding its use...... to inherent issues with the enhanced permeability and retention effect, the tumour phenomenon which liposomal drugs exploit. This effect seems very heterogeneously distributed in the tumour. Also, it is potentially not as ubiquitously occurring as once thought, and it may prove important to select patients...... not resolve the other challenges that liposomal chemotherapy faces, and more work still needs to be done to determine which veterinary patients may benefit the most from liposomal chemotherapy....

  7. New process encapsulates

    Mueller, J.J.

    1982-01-01

    The results of the various aspects of this study indicate that the encapsulation process is not only capable of reducing the percent of Radon-222 emanation but also reduces the possibility of the leaching of toxic elements. Radon-222 emanation after solidification showed a 93.51% reduction from the slurry. The Gamma Spectral Analyses of short-lived Radon daughters supported the above findings. Leach studies on solidified refinery waste and transformer oils indicate there is a significant reduction in the possibility of toxic substances leaching out of the solidified samples. Further studies are needed to confirm the results of this investigation; however, the present findings indicate that the process could substantially reduce Radon-222 exhalation into the environment from uranium tailings ponds and reduce toxic leachates from hazardous waste materials

  8. A Study on Organic-Metal Halide Perovskite Film Morphology, Interfacial Layers, Tandem Applications, and Encapsulation

    Fisher, Dallas A.

    Organic-metal halide perovskites have brought about a new wave of research in the photovoltaic community due to their ideally suited optical and electronic parameters. In less than a decade, perovskite solar cell performance has skyrocketed to unprecedented efficiencies with numerous reported methodologies. Perovskites face many challenges with high-quality film morphology, interfacial layers, and long-term stability. In this work, these active areas are explored through a combination of studies. First, the importance of perovskite film precursor ratios is explored with an in-depth study of carrier lifetime and solvent-grain effects. It was found that excess lead iodide precursor greatly improves the film morphology by reducing pinholes in the solar absorber. Dimethyl sulfoxide (DMSO) solvent was found to mend grains, as well as improve carrier lifetime and device performance, possibly by passivation of grain boundary traps. Second, applications of perovskite with tandem cells is investigated, with an emphasis for silicon devices. Perovskites can easily be integrated with silicon, which already has strong market presence. Additionally, both materials' bandgaps are ideally suited for maximum tandem efficiency. The silicon/perovskite tandem device structure necessitated the optimization of inverted (p-i-n) structure devices. PEDOT:PSS, copper oxide, and nickel oxide p-type layers were explored through a combination of photoluminescent, chemical reactivity, and solar simulation results. Results were hindered due to resistive ITO and rough silicon substrates, but tandem devices displayed Voc indicative of proper monolithic performance. Third, replacement of titanium dioxide n-type layer with iron oxide (Fe 2O3, common rust) was studied. Iron oxide experiences less ultraviolet instability than that of titanium dioxide under solar illumination. It was found that current density slightly decreased due to parasitic absorption from the rust, but that open circuit voltage

  9. OSR encapsulation basis -- 100-KW

    Meichle, R.H.

    1995-01-01

    The purpose of this report is to provide the basis for a change in the Operations Safety Requirement (OSR) encapsulated fuel storage requirements in the 105 KW fuel storage basin which will permit the handling and storing of encapsulated fuel in canisters which no longer have a water-free space in the top of the canister. The scope of this report is limited to providing the change from the perspective of the safety envelope (bases) of the Safety Analysis Report (SAR) and Operations Safety Requirements (OSR). It does not change the encapsulation process itself

  10. Multiple encapsulation of LANL waste using polymers. Final report

    Schwartz, R.L.

    1994-01-01

    Polymer encapsulation of lead shielding/blasting grit (surrogate) mixed waste was optimized at bench scale using melamine formaldehyde, polyurethane, and butadiene thermosetting polymers. Three pellet-based intermediate waste forms, and a final waste form, were prepared, each providing an additional level of integrity. Encapsulated waste integrity was measured by chemical and physical techniques. Compliance was established using the Toxicity Characteristic Leaching Procedure. Equipment appropriate to pilot-scale demonstration of program techniques was investigated. A preliminary equipment list and layout, and process block flow diagram were prepared

  11. Integration of silicon-based neural probes and micro-drive arrays for chronic recording of large populations of neurons in behaving animals.

    Michon, Frédéric; Aarts, Arno; Holzhammer, Tobias; Ruther, Patrick; Borghs, Gustaaf; McNaughton, Bruce; Kloosterman, Fabian

    2016-08-01

    Understanding how neuronal assemblies underlie cognitive function is a fundamental question in system neuroscience. It poses the technical challenge to monitor the activity of populations of neurons, potentially widely separated, in relation to behaviour. In this paper, we present a new system which aims at simultaneously recording from a large population of neurons from multiple separated brain regions in freely behaving animals. The concept of the new device is to combine the benefits of two existing electrophysiological techniques, i.e. the flexibility and modularity of micro-drive arrays and the high sampling ability of electrode-dense silicon probes. Newly engineered long bendable silicon probes were integrated into a micro-drive array. The resulting device can carry up to 16 independently movable silicon probes, each carrying 16 recording sites. Populations of neurons were recorded simultaneously in multiple cortical and/or hippocampal sites in two freely behaving implanted rats. Current approaches to monitor neuronal activity either allow to flexibly record from multiple widely separated brain regions (micro-drive arrays) but with a limited sampling density or to provide denser sampling at the expense of a flexible placement in multiple brain regions (neural probes). By combining these two approaches and their benefits, we present an alternative solution for flexible and simultaneous recordings from widely distributed populations of neurons in freely behaving rats.

  12. Proposal of a broadband, polarization-insensitive and high-efficiency hot-carrier schottky photodetector integrated with a plasmonic silicon ridge waveguide

    Yang, Liu; Kou, Pengfei; Shen, Jianqi; Lee, El Hang; He, Sailing

    2015-01-01

    We propose a broadband, polarization-insensitive and high-efficiency plasmonic Schottky diode for detection of sub-bandgap photons in the optical communication wavelength range through internal photoemission (IPE). The distinctive features of this design are that it has a gold film covering both the top and the sidewalls of a dielectric silicon ridge waveguide with the Schottky contact formed at the gold–silicon interface and the sidewall coverage of gold can be easily tuned by an insulating layer. An extensive physical model on IPE of hot carriers is presented in detail and is applied to calculate and examine the performance of this detector. In comparison with a diode having only the top gold contact, the polarization sensitivity of the responsivity is greatly minimized in our photodetector with gold film covering both the top and the sidewall. Much higher responsivities for both polarizations are also achieved over a broad wavelength range of 1.2–1.6 μm. Moreover, the Schottky contact is only 4 μm long, leading to a very small dark current. Our design is very promising for practical applications in high-density silicon photonic integration. (paper)

  13. Passive technologies for future large-scale photonic integrated circuits on silicon: polarization handling, light non-reciprocity and loss reduction

    Daoxin Dai

    2012-03-01

    Full Text Available Silicon-based large-scale photonic integrated circuits are becoming important, due to the need for higher complexity and lower cost for optical transmitters, receivers and optical buffers. In this paper, passive technologies for large-scale photonic integrated circuits are described, including polarization handling, light non-reciprocity and loss reduction. The design rule for polarization beam splitters based on asymmetrical directional couplers is summarized and several novel designs for ultra-short polarization beam splitters are reviewed. A novel concept for realizing a polarization splitter–rotator is presented with a very simple fabrication process. Realization of silicon-based light non-reciprocity devices (e.g., optical isolator, which is very important for transmitters to avoid sensitivity to reflections, is also demonstrated with the help of magneto-optical material by the bonding technology. Low-loss waveguides are another important technology for large-scale photonic integrated circuits. Ultra-low loss optical waveguides are achieved by designing a Si3N4 core with a very high aspect ratio. The loss is reduced further to <0.1 dB m−1 with an improved fabrication process incorporating a high-quality thermal oxide upper cladding by means of wafer bonding. With the developed ultra-low loss Si3N4 optical waveguides, some devices are also demonstrated, including ultra-high-Q ring resonators, low-loss arrayed-waveguide grating (demultiplexers, and high-extinction-ratio polarizers.

  14. Gravity Probe B Encapsulated

    2004-01-01

    In this photo, the Gravity Probe B (GP-B) space vehicle is being encapsulated atop the Delta II launch vehicle. The GP-B is the relativity experiment developed at Stanford University to test two extraordinary predictions of Albert Einstein's general theory of relativity. The experiment will measure, very precisely, the expected tiny changes in the direction of the spin axes of four gyroscopes contained in an Earth-orbiting satellite at a 400-mile altitude. So free are the gyroscopes from disturbance that they will provide an almost perfect space-time reference system. They will measure how space and time are very slightly warped by the presence of the Earth, and, more profoundly, how the Earth's rotation very slightly drags space-time around with it. These effects, though small for the Earth, have far-reaching implications for the nature of matter and the structure of the Universe. GP-B is among the most thoroughly researched programs ever undertaken by NASA. This is the story of a scientific quest in which physicists and engineers have collaborated closely over many years. Inspired by their quest, they have invented a whole range of technologies that are already enlivening other branches of science and engineering. Launched April 20, 2004 , the GP-B program was managed for NASA by the Marshall Space Flight Center. Development of the GP-B is the responsibility of Stanford University along with major subcontractor Lockheed Martin Corporation. (Image credit to Russ Underwood, Lockheed Martin Corporation).

  15. Sclerosing Encapsulating Peritonitis; Review

    Norman O. Machado

    2016-05-01

    Full Text Available Sclerosing encapsulating peritonitis (SEP is a rare chronic inflammatory condition of the peritoneum with an unknown aetiology. Also known as abdominal cocoon, the condition occurs when loops of the bowel are encased within the peritoneal cavity by a membrane, leading to intestinal obstruction. Due to its rarity and nonspecific clinical features, it is often misdiagnosed. The condition presents with recurrent episodes of small bowel obstruction and can be idiopathic or secondary; the latter is associated with predisposing factors such as peritoneal dialysis or abdominal tuberculosis. In the early stages, patients can be managed conservatively; however, surgical intervention is necessary for those with advanced stage intestinal obstruction. A literature review revealed 118 cases of SEP; the mean age of these patients was 39 years and 68.0% were male. The predominant presentation was abdominal pain (72.0%, distension (44.9% or a mass (30.5%. Almost all of the patients underwent surgical excision (99.2% without postoperative complications (88.1%.

  16. Encapsulation process for diffraction gratings.

    Ratzsch, Stephan; Kley, Ernst-Bernhard; Tünnermann, Andreas; Szeghalmi, Adriana

    2015-07-13

    Encapsulation of grating structures facilitates an improvement of the optical functionality and/or adds mechanical stability to the fragile structure. Here, we introduce novel encapsulation process of nanoscale patterns based on atomic layer deposition and micro structuring. The overall size of the encapsulated structured surface area is only restricted by the size of the available microstructuring and coating devices; thus, overcoming inherent limitations of existing bonding processes concerning cleanliness, roughness, and curvature of the components. Finally, the process is demonstrated for a transmission grating. The encapsulated grating has 97.5% transmission efficiency in the -1st diffraction order for TM-polarized light, and is being limited by the experimental grating parameters as confirmed by rigorous coupled wave analysis.

  17. Encapsulated microsensors for reservoir interrogation

    Scott, Eddie Elmer; Aines, Roger D.; Spadaccini, Christopher M.

    2016-03-08

    In one general embodiment, a system includes at least one microsensor configured to detect one or more conditions of a fluidic medium of a reservoir; and a receptacle, wherein the receptacle encapsulates the at least one microsensor. In another general embodiment, a method include injecting the encapsulated at least one microsensor as recited above into a fluidic medium of a reservoir; and detecting one or more conditions of the fluidic medium of the reservoir.

  18. Towards Cost-Effective Crystalline Silicon Based Flexible Solar Cells: Integration Strategy by Rational Design of Materials, Process, and Devices

    Bahabry, Rabab R.

    2017-01-01

    . However, silicon is a brittle material with a fracture strains <1%. Highly flexible Si-based solar cells are available in the form thin films which seem to be disadvantageous over thick Si solar cells due to the reduction of the optical absorption

  19. 112 Gbit/s single-polarization silicon coherent receiver with hybrid-integrated BiCMOS linear TIA

    Verbist, J.; Zhang, J.; Moeneclaey, B.; van Weerdenburg, J.; van Uden, R.; Okonkwo, C.; Yin, X.; Bauwelinck, J.; Roelkens, G.

    2015-01-01

    We report the design, fabrication and verification of a single-polarization silicon coherent receiver with a low-power linear TIA array. Error-free operation assuming FEC is shown at bitrates of 112 Gbit/s (28 Gbaud 16-QAM) and 56 Gbit/s (28 Gbaud QPSK).

  20. Compact Low-Power-Consumption 28-Gbaud QPSK/16-QAM Integrated Silicon Photonic/Electronic Coherent Receiver

    Zhang, J.; Verbist, J.; Moeneclaey, B.; van Weerdenburg, J.; van Uden, R.G.H.; Chen, H.; van Campenhout, J.; Okonkwo, C; Yin, X; Bauwelinck, J.; Roelkens, G.

    2016-01-01

    We demonstrate the codesign and cointegration of an ultracompact silicon photonic receiver and a low-power-consumption (155 mW/channel) two-channel linear transimpedance amplifier array. Operation below the forward error coding (FEC) threshold both for quadrature phase-shift keying (QPSK) and

  1. Periodically poled silicon

    Hon, Nick K.; Tsia, Kevin K.; Solli, Daniel R.; Khurgin, Jacob B.; Jalali, Bahram

    2010-02-01

    Bulk centrosymmetric silicon lacks second-order optical nonlinearity χ(2) - a foundational component of nonlinear optics. Here, we propose a new class of photonic device which enables χ(2) as well as quasi-phase matching based on periodic stress fields in silicon - periodically-poled silicon (PePSi). This concept adds the periodic poling capability to silicon photonics, and allows the excellent crystal quality and advanced manufacturing capabilities of silicon to be harnessed for devices based on χ(2)) effects. The concept can also be simply achieved by having periodic arrangement of stressed thin films along a silicon waveguide. As an example of the utility, we present simulations showing that mid-wave infrared radiation can be efficiently generated through difference frequency generation from near-infrared with a conversion efficiency of 50% based on χ(2) values measurements for strained silicon reported in the literature [Jacobson et al. Nature 441, 199 (2006)]. The use of PePSi for frequency conversion can also be extended to terahertz generation. With integrated piezoelectric material, dynamically control of χ(2)nonlinearity in PePSi waveguide may also be achieved. The successful realization of PePSi based devices depends on the strength of the stress induced χ(2) in silicon. Presently, there exists a significant discrepancy in the literature between the theoretical and experimentally measured values. We present a simple theoretical model that produces result consistent with prior theoretical works and use this model to identify possible reasons for this discrepancy.

  2. Polar and Nonpolar Gallium Nitride and Zinc Oxide based thin film heterostructures Integrated with Sapphire and Silicon

    Gupta, Pranav

    This dissertation work explores the understanding of the relaxation and integration of polar and non-polar of GaN and ZnO thin films with Sapphire and silicon substrates. Strain management and epitaxial analysis has been performed on wurtzitic GaN(0001) thin films grown on c-Sapphire and wurtzitic non-polar a-plane GaN(11-20) thin films grown on r-plane Sapphire (10-12) by remote plasma atomic nitrogen source assisted UHV Pulsed Laser Deposition process. It has been established that high-quality 2-dimensional c-axis GaN(0001) nucleation layers can be grown on c-Sapphire by PLD process at growth temperatures as low as ˜650°C. Whereas the c-axis GaN on c-sapphire has biaxially negative misfit, the crystalline anisotropy of the a-plane GaN films on r-Sapphire results in compressive and tensile misfits in the two major orthogonal directions. The measured strains have been analyzed in detail by X-ray, Raman spectroscopy and TEM. Strain relaxation in GaN(0001)/Sapphire thin film heterostructure has been explained by the principle of domain matched epitaxial growth in large planar misfit system and has been demonstrated by TEM study. An attempt has been made to qualitatively understand the minimization of free energy of the system from the strain perspective. Analysis has been presented to quantify the strain components responsible for the compressive strain observed in the GaN(0001) thin films on c-axis Sapphire substrates. It was also observed that gallium rich deposition conditions in PLD process lead to smoother nucleation layers because of higher ad-atom mobility of gallium. We demonstrate near strain relaxed epitaxial (0001) GaN thin films grown on (111) Si substrates using TiN as intermediate buffer layer by remote nitrogen plasma assisted UHV pulsed laser deposition (PLD). Because of large misfits between the TiN/GaN and TiN/Si systems the TIN buffer layer growth occurs via nucleation of interfacial dislocations under domain matching epitaxy paradigm. X-ray and

  3. Encapsulation and Nano-Encapsulation of Papain Active Sites to Enhance Radiolityc Stability and Decrease Toxicity

    Lugão, A. B.; Varca, G. H.C.; Paiffer, F.; Mathor, M. B.; Lopes, P. S.; Rogero, S.; Rogero, J. R. [Comissão Nacional de Energia Nuclear (CNEN), Instituto de Pesquisas Energeticas e Nucleares (IPEN), Sao Paulo (Brazil)

    2009-07-01

    Papain is used as an ingredient in various enzymatic debridement preparations. Those paste-like preparations are based on water solution and usually are sterilized by radiation. As a consequence, there is a major decrease in papain activity. Papain containing preparations are used in chronic wounds treatment in order to clean and remove the necrotic tissue. However FDA (2008) is taking an action against such products due to severe adverse events reported in patients which were submitted to papain treatments. Thus, the main goal of this proposal is to develop encapsulated papain containing membranes based on hydrogels and silicone rubber in an attempt to achieve a controllable distribution of size and delivery profile, a toxicity reduction and provide stability towards radiation processing through nanoencapsulation with cyclodextrins, which may also provide protection to the enzyme against radiation induced radiolysis. (author)

  4. Encapsulation and Nano-Encapsulation of Papain Active Sites to Enhance Radiolityc Stability and Decrease Toxicity

    Lugão, A.B.; Varca, G.H.C.; Paiffer, F.; Mathor, M.B.; Lopes, P.S.; Rogero, S.; Rogero, J.R.

    2009-01-01

    Papain is used as an ingredient in various enzymatic debridement preparations. Those paste-like preparations are based on water solution and usually are sterilized by radiation. As a consequence, there is a major decrease in papain activity. Papain containing preparations are used in chronic wounds treatment in order to clean and remove the necrotic tissue. However FDA (2008) is taking an action against such products due to severe adverse events reported in patients which were submitted to papain treatments. Thus, the main goal of this proposal is to develop encapsulated papain containing membranes based on hydrogels and silicone rubber in an attempt to achieve a controllable distribution of size and delivery profile, a toxicity reduction and provide stability towards radiation processing through nanoencapsulation with cyclodextrins, which may also provide protection to the enzyme against radiation induced radiolysis. (author)

  5. Subwavelength silicon photonics

    Cheben, P.; Bock, P.J.; Schmid, J.H.; Lapointe, J.; Janz, S.; Xu, D.-X.; Densmore, A.; Delage, A.; Lamontagne, B.; Florjanczyk, M.; Ma, R.

    2011-01-01

    With the goal of developing photonic components that are compatible with silicon microelectronic integrated circuits, silicon photonics has been the subject of intense research activity. Silicon is an excellent material for confining and manipulating light at the submicrometer scale. Silicon optoelectronic integrated devices have the potential to be miniaturized and mass-produced at affordable cost for many applications, including telecommunications, optical interconnects, medical screening, and biological and chemical sensing. We review recent advances in silicon photonics research at the National Research Council Canada. A new type of optical waveguide is presented, exploiting subwavelength grating (SWG) effect. We demonstrate subwavelength grating waveguides made of silicon, including practical components operating at telecom wavelengths: input couplers, waveguide crossings and spectrometer chips. SWG technique avoids loss and wavelength resonances due to diffraction effects and allows for single-mode operation with direct control of the mode confinement by changing the refractive index of a waveguide core over a range as broad as 1.6 - 3.5 simply by lithographic patterning. The light can be launched to these waveguides with a coupling loss as small as 0.5 dB and with minimal wavelength dependence, using coupling structures similar to that shown in Fig. 1. The subwavelength grating waveguides can cross each other with minimal loss and negligible crosstalk which allows massive photonic circuit connectivity to overcome the limits of electrical interconnects. These results suggest that the SWG waveguides could become key elements for future integrated photonic circuits. (authors)

  6. Characterization of 13 and 30 mum thick hydrogenated amorphous silicon diodes deposited over CMOS integrated circuits for particle detection application

    Despeisse, M; Commichau, S C; Dissertori, G; Garrigos, A; Jarron, P; Miazza, C; Moraes, D; Shah, A; Wyrsch, N; Viertel, Gert M; 10.1016/j.nima.2003.11.022

    2004-01-01

    We present the experimental results obtained with a novel monolithic silicon pixel detector which consists in depositing a n-i-p hydrogenated amorphous silicon (a-Si:H) diode straight above the readout ASIC (this technology is called Thin Film on ASIC, TFA). The characterization has been performed on 13 and 30mum thick a-Si:H films deposited on top of an ASIC containing a linear array of high- speed low-noise transimpedance amplifiers designed in a 0.25mum CMOS technology. Experimental results presented have been obtained with a 600nm pulsed laser. The results of charge collection efficiency and charge collection speed of these structures are discussed.

  7. UV lithography-based protein patterning on silicon: Towards the integration of bioactive surfaces and CMOS electronics

    Lenci, S., E-mail: silvia.lenci@iet.unipi.it [Dipartimento di Ingegneria dell' Informazione, via G.Caruso 16, Pisa I-56122 (Italy); Tedeschi, L. [Istituto di Fisiologia Clinica - CNR, via G. Moruzzi 1, Pisa I-56124 (Italy); Pieri, F. [Dipartimento di Ingegneria dell' Informazione, via G.Caruso 16, Pisa I-56122 (Italy); Domenici, C. [Istituto di Fisiologia Clinica - CNR, via G. Moruzzi 1, Pisa I-56124 (Italy)

    2011-08-01

    A simple and fast methodology for protein patterning on silicon substrates is presented, providing an insight into possible issues related to the interaction between biological and microelectronic technologies. The method makes use of standard photoresist lithography and is oriented towards the implementation of biosensors containing Complementary Metal-Oxide-Semiconductor (CMOS) conditioning circuitry. Silicon surfaces with photoresist patterns were prepared and hydroxylated by means of resist- and CMOS backend-compatible solutions. Subsequent aminosilane deposition and resist lift-off in organic solvents resulted into well-controlled amino-terminated geometries. The discussion is focused on resist- and CMOS-compatibility problems related to the used chemicals. Some samples underwent gold nanoparticle (Au NP) labeling and Scanning Electron Microscopy (SEM) observation, in order to investigate the quality of the silane layer. Antibodies were immobilized on other samples, which were subsequently exposed to a fluorescently labeled antigen. Fluorescence microscopy observation showed that this method provides spatially selective immobilization of protein layers onto APTES-patterned silicon samples, while preserving protein reactivity inside the desired areas and low non-specific adsorption elsewhere. Strong covalent biomolecule binding was achieved, giving stable protein layers, which allows stringent binding conditions and a good binding specificity, really useful for biosensing.

  8. Silicon detectors

    Klanner, R.

    1984-08-01

    The status and recent progress of silicon detectors for high energy physics is reviewed. Emphasis is put on detectors with high spatial resolution and the use of silicon detectors in calorimeters. (orig.)

  9. Low-cost encapsulation materials for terrestrial solar cell modules

    Cuddihy, E. F.; Baum, B.; Willis, P.

    1979-01-01

    The paper presents the findings of material surveys intended to identify low cost materials which could be functional as encapsulants (by 1986) for terrestrial solar cell modules. Economic analyses have indicated that in order to meet the low cost goal of $2.70 per sq m, some or all of the following material technologies must be developed or advanced: (1) UV screening outer covers; (2) elastomeric acrylics; (3) weatherproofing and waterproofing of structural wood and paper products; (4) transparent UV stabilizers for the UV-sensitive transparent pottants; and (5) cost-effective utilization of silicone and fluorocarbon materials.

  10. Amorphous silicon based particle detectors

    Wyrsch, N.; Franco, A.; Riesen, Y.; Despeisse, M.; Dunand, S.; Powolny, F.; Jarron, P.; Ballif, C.

    2012-01-01

    Radiation hard monolithic particle sensors can be fabricated by a vertical integration of amorphous silicon particle sensors on top of CMOS readout chip. Two types of such particle sensors are presented here using either thick diodes or microchannel plates. The first type based on amorphous silicon diodes exhibits high spatial resolution due to the short lateral carrier collection. Combination of an amorphous silicon thick diode with microstrip detector geometries permits to achieve micromete...

  11. A chemically stable PVD multilayer encapsulation for lithium microbatteries

    Ribeiro, J F; Sousa, R; Cunha, D J; Vieira, E M F; Goncalves, L M; Silva, M M; Dupont, L

    2015-01-01

    A multilayer physical vapour deposition (PVD) thin-film encapsulation method for lithium microbatteries is presented. Lithium microbatteries with a lithium cobalt oxide (LiCoO 2 ) cathode, a lithium phosphorous oxynitride (LiPON) electrolyte and a metallic lithium anode are under development, using PVD deposition techniques. Metallic lithium film is still the most common anode on this battery technology; however, it presents a huge challenge in terms of material encapsulation (lithium reacts with almost any materials deposited on top and almost instantly begins oxidizing in contact with atmosphere). To prove the encapsulation concept and perform all the experiments, lithium films were deposited by thermal evaporation technique on top of a glass substrate, with previously patterned Al/Ti contacts. Three distinct materials, in a multilayer combination, were tested to prevent lithium from reacting with protection materials and atmosphere. These multilayer films were deposited by RF sputtering and were composed of lithium phosphorous oxide (LiPO), LiPON and silicon nitride (Si 3 N 4 ). To complete the long-term encapsulation after breaking the vacuum, an epoxy was applied on top of the PVD multilayer. In order to evaluate oxidation state of lithium films, the lithium resistance was measured in a four probe setup (cancelling wires/contact resistances) and resistivity calculated, considering physical dimensions. A lithium resistivity of 0.16 Ω μm was maintained for more than a week. This PVD multilayer exonerates the use of chemical vapour deposition (CVD), glove-box chambers and sample manipulation between them, significantly reducing the fabrication cost, since battery and its encapsulation are fabricated in the same PVD chamber. (paper)

  12. A chemically stable PVD multilayer encapsulation for lithium microbatteries

    Ribeiro, J. F.; Sousa, R.; Cunha, D. J.; Vieira, E. M. F.; Silva, M. M.; Dupont, L.; Goncalves, L. M.

    2015-10-01

    A multilayer physical vapour deposition (PVD) thin-film encapsulation method for lithium microbatteries is presented. Lithium microbatteries with a lithium cobalt oxide (LiCoO2) cathode, a lithium phosphorous oxynitride (LiPON) electrolyte and a metallic lithium anode are under development, using PVD deposition techniques. Metallic lithium film is still the most common anode on this battery technology; however, it presents a huge challenge in terms of material encapsulation (lithium reacts with almost any materials deposited on top and almost instantly begins oxidizing in contact with atmosphere). To prove the encapsulation concept and perform all the experiments, lithium films were deposited by thermal evaporation technique on top of a glass substrate, with previously patterned Al/Ti contacts. Three distinct materials, in a multilayer combination, were tested to prevent lithium from reacting with protection materials and atmosphere. These multilayer films were deposited by RF sputtering and were composed of lithium phosphorous oxide (LiPO), LiPON and silicon nitride (Si3N4). To complete the long-term encapsulation after breaking the vacuum, an epoxy was applied on top of the PVD multilayer. In order to evaluate oxidation state of lithium films, the lithium resistance was measured in a four probe setup (cancelling wires/contact resistances) and resistivity calculated, considering physical dimensions. A lithium resistivity of 0.16 Ω μm was maintained for more than a week. This PVD multilayer exonerates the use of chemical vapour deposition (CVD), glove-box chambers and sample manipulation between them, significantly reducing the fabrication cost, since battery and its encapsulation are fabricated in the same PVD chamber.

  13. Transformational silicon electronics

    Rojas, Jhonathan Prieto

    2014-02-25

    In today\\'s traditional electronics such as in computers or in mobile phones, billions of high-performance, ultra-low-power devices are neatly integrated in extremely compact areas on rigid and brittle but low-cost bulk monocrystalline silicon (100) wafers. Ninety percent of global electronics are made up of silicon. Therefore, we have developed a generic low-cost regenerative batch fabrication process to transform such wafers full of devices into thin (5 μm), mechanically flexible, optically semitransparent silicon fabric with devices, then recycling the remaining wafer to generate multiple silicon fabric with chips and devices, ensuring low-cost and optimal utilization of the whole substrate. We show monocrystalline, amorphous, and polycrystalline silicon and silicon dioxide fabric, all from low-cost bulk silicon (100) wafers with the semiconductor industry\\'s most advanced high-κ/metal gate stack based high-performance, ultra-low-power capacitors, field effect transistors, energy harvesters, and storage to emphasize the effectiveness and versatility of this process to transform traditional electronics into flexible and semitransparent ones for multipurpose applications. © 2014 American Chemical Society.

  14. Advances in silicon nanophotonics

    Hvam, Jørn Märcher; Pu, Minhao

    Silicon has long been established as an ideal material for passive integrated optical circuitry due to its high refractive index, with corresponding strong optical confinement ability, and its low-cost CMOS-compatible manufacturability. However, the inversion symmetry of the silicon crystal lattice.......g. in high-bit-rate optical communication circuits and networks, it is vital that the nonlinear optical effects of silicon are being strongly enhanced. This can among others be achieved in photonic-crystal slow-light waveguides and in nano-engineered photonic-wires (Fig. 1). In this talk I shall present some...... recent advances in this direction. The efficient coupling of light between optical fibers and the planar silicon devices and circuits is of crucial importance. Both end-coupling (Fig. 1) and grating-coupling solutions will be discussed along with polarization issues. A new scheme for a hybrid III...

  15. Analysis and Design of Manycore Processor-to-DRAM Opto-Electrical Networks with Integrated Silicon Photonics

    2009-12-24

    4th edition, 2007. •A\\ [13] A Joshi, C Batten, Y Kwon, S Beamer, Imran Shamim , Krste Asanovic, and Vladimir Sto- janovic. Silicon-photonic clos...W911NF-08-l-0134andW911NF-08-l-0139 6. AUTHOR( S ) Vladimir Stojanovic and Krste Asanovic 7. PERFORMING ORGANIZATION NAME( S ) AND ADDRESSES) MIT, 77...MONITORING AGENCY NAME( S ) AND ADDRESS(ES) U. S . Army Research Office P.O. Box 12211 Research Triangle Park, NC 27709-2211 10. SPONSORTNG/ MONITORING

  16. Encapsulated Silicon Nanocrystals Formed in Silica by Ion Beam Synthesis

    Choi, Han Woo; Woo, Hyung Joo; Kim, Joon Kon; Kim, Gi Dong; Hong, Wan; Ji, Young Yong

    2004-01-01

    The photoluminescence (PL) emission of Si nanocrystals synthesized by 400 keV Si ion implanted in SiO 2 is studied as a function of ion dose and annealing time. The formation of nanocrystals at around 600 nm from the surface was confirmed by RBS and HRTEM, and the Si nanocrystals showed a wide and very intense PL emission at 700-900 nm. The intensity of this emission showed a typical behaviour with a fast transitory increase to reach a saturation with the annealing time, however, the red shift increased continuously because of the Ostwald ripening. The oversaturation of dose derived a decrease of PL intensity because of the diminishment of quantum confinement. A strong enhancement of PL intensity by H passivation was confirmed also, and the possible mechanism is discussed

  17. Luneburg lens in silicon photonics.

    Di Falco, Andrea; Kehr, Susanne C; Leonhardt, Ulf

    2011-03-14

    The Luneburg lens is an aberration-free lens that focuses light from all directions equally well. We fabricated and tested a Luneburg lens in silicon photonics. Such fully-integrated lenses may become the building blocks of compact Fourier optics on chips. Furthermore, our fabrication technique is sufficiently versatile for making perfect imaging devices on silicon platforms.

  18. Design and fabrication of a foldable 3D silicon based package for solid state lighting applications

    Sokolovskij, R; Liu, P; Van Zeijl, H W; Mimoun, B; Zhang, G Q

    2015-01-01

    Miniaturization of solid state lighting (SSL) luminaires as well as reduction of packaging and assembly costs are of prime interest for the SSL lighting industry. A novel silicon based LED package for lighting applications is presented in this paper. The proposed design consists of 5 rigid Si tiles connected by flexible polyimide hinges with embedded interconnects (ICs). Electrical, optical and thermal characteristics were taken into consideration during design. The fabrication process involved polyimide (PI) application and patterning, aluminium interconnect integration in the flexible hinge, LED reflector cavity formation and metalization followed by through wafer DRIE etching for chip formation and release. A method to connect chip front to backside without TSVs was also integrated into the process. Post-fabrication wafer level assembly included LED mounting and wirebond, phosphor-based colour conversion and silicone encapsulation. The package formation was finalized by vacuum assisted wrapping around an assembly structure to form a 3D geometry, which is beneficial for omnidirectional lighting. Bending tests were performed on the flexible ICs and optical performance at different temperatures was evaluated. It is suggested that 3D packages can be expanded to platforms for miniaturized luminaire applications by combining monolithic silicon integration and system-in-package (SiP) technologies. (paper)

  19. Fluorescence and thermoluminescence in silicon oxide films rich in silicon

    Berman M, D.; Piters, T. M.; Aceves M, M.; Berriel V, L. R.; Luna L, J. A.

    2009-10-01

    In this work we determined the fluorescence and thermoluminescence (TL) creation spectra of silicon rich oxide films (SRO) with three different silicon excesses. To study the TL of SRO, 550 nm of SRO film were deposited by Low Pressure Chemical Vapor Deposition technique on N-type silicon substrates with resistivity in the order of 3 to 5 Ω-cm with silicon excess controlled by the ratio of the gases used in the process, SRO films with Ro= 10, 20 and 30 (12-6% silicon excess) were obtained. Then, they were thermally treated in N 2 at high temperatures to diffuse and homogenize the silicon excess. In the fluorescence spectra two main emission regions are observed, one around 400 nm and one around 800 nm. TL creation spectra were determined by plotting the integrated TL intensity as function of the excitation wavelength. (Author)

  20. Encapsulated Curcumin for Transdermal Administration

    Purpose: To develop a proniosomal carrier system of curcumin for transdermal delivery. Methods: Proniosomes of curcumin were prepared by encapsulation of the drug in a mixture of Span 80, cholesterol and diethyl ether by ether injection method, and then investigated as a transdermal drug delivery system (TDDS).

  1. Device for encapsulating radioactive materials

    Suthanthiran, K.

    1994-01-01

    A capsule for encapsulating radioactive material for radiation treatment comprising two or more interfitting sleeves, wherein each sleeve comprises a closed bottom portion having a circumferential wall extending therefrom, and an open end located opposite the bottom portion. The sleeves are constructed to fit over one another to thereby establish an effectively sealed capsule container. 3 figs

  2. Encapsulation of polymer photovoltaic prototypes

    Krebs, Frederik C

    2006-01-01

    A simple and efficient method for the encapsulation of polymer and organic photovoltaic prototypes is presented. The method employs device preparation on glass substrates with subsequent sealing using glass fiber reinforced thermosetting epoxy (prepreg) against a back plate. The method allows...

  3. Reactants encapsulation and Maillard Reaction

    Troise, A.D.; Fogliano, V.

    2013-01-01

    In the last decades many efforts have been addressed to the control of Maillard Reaction products in different foods with the aim to promote the formation of compounds having the desired color and flavor and to reduce the concentration of several potential toxic molecules. Encapsulation, already

  4. Technology of mammalian cell encapsulation

    Uludag, H; De Vos, P; Tresco, PA

    2000-01-01

    Entrapment of mammalian cells in physical membranes has been practiced since the early 1950s when it was originally introduced as a basic research tool. The method has since been developed based on the promise of its therapeutic usefulness in tissue transplantation. Encapsulation physically isolates

  5. Laboratory course on silicon sensors

    Crescio, E; Roe, S; Rudge, A

    2003-01-01

    The laboratory course consisted of four different mini sessions, in order to give the student some hands-on experience on various aspects of silicon sensors and related integrated electronics. The four experiments were. 1. Characterisation of silicon diodes for particle detection 2. Study of noise performance of the Viking readout circuit 3. Study of the position resolution of a silicon microstrip sensor 4. Study of charge transport in silicon with a fast amplifier The data in the following were obtained during the ICFA school by the students.

  6. Determination of the quasi-TE mode (in-plane) graphene linear absorption coefficient via integration with silicon-on-insulator racetrack cavity resonators.

    Crowe, Iain F; Clark, Nicholas; Hussein, Siham; Towlson, Brian; Whittaker, Eric; Milosevic, Milan M; Gardes, Frederic Y; Mashanovich, Goran Z; Halsall, Matthew P; Vijayaraghaven, Aravind

    2014-07-28

    We examine the near-IR light-matter interaction for graphene integrated cavity ring resonators based on silicon-on-insulator (SOI) race-track waveguides. Fitting of the cavity resonances from quasi-TE mode transmission spectra reveal the real part of the effective refractive index for graphene, n(eff) = 2.23 ± 0.02 and linear absorption coefficient, α(gTE) = 0.11 ± 0.01dBμm(-1). The evanescent nature of the guided mode coupling to graphene at resonance depends strongly on the height of the graphene above the cavity, which places limits on the cavity length for optical sensing applications.

  7. An integrated optic ethanol vapor sensor based on a silicon-on-insulator microring resonator coated with a porous ZnO film.

    Yebo, Nebiyu A; Lommens, Petra; Hens, Zeger; Baets, Roel

    2010-05-24

    Optical structures fabricated on silicon-on-insulator technology provide a convenient platform for the implementation of highly compact, versatile and low cost devices. In this work, we demonstrate the promise of this technology for integrated low power and low cost optical gas sensing. A room temperature ethanol vapor sensor is demonstrated using a ZnO nanoparticle film as a coating on an SOI micro-ring resonator of 5 microm in radius. The local coating on the ring resonators is prepared from colloidal suspensions of ZnO nanoparticles of around 3 nm diameter. The porous nature of the coating provides a large surface area for gas adsorption. The ZnO refractive index change upon vapor adsorption shifts the microring resonance through evanescent field interaction. Ethanol vapor concentrations down to 100 ppm are detected with this sensing configuration and a detection limit below 25 ppm is estimated.

  8. Silicon microphotonic waveguides

    Ta'eed, V.; Steel, M.J.; Grillet, C.; Eggleton, B.; Du, J.; Glasscock, J.; Savvides, N.

    2004-01-01

    Full text: Silicon microphotonic devices have been drawing increasing attention in the past few years. The high index-difference between silicon and its oxide (Δn = 2) suggests a potential for high-density integration of optical functions on to a photonic chip. Additionally, it has been shown that silicon exhibits strong Raman nonlinearity, a necessary property as light interaction can occur only by means of nonlinearities in the propagation medium. The small dimensions of silicon waveguides require the design of efficient tapers to couple light to them. We have used the beam propagation method (RSoft BeamPROP) to understand the principles and design of an inverse-taper mode-converter as implemented in several recent papers. We report on progress in the design and fabrication of silicon-based waveguides. Preliminary work has been conducted by patterning silicon-on-insulator (SOI) wafers using optical lithography and reactive ion etching. Thus far, only rib waveguides have been designed, as single-mode ridge-waveguides are beyond the capabilities of conventional optical lithography. We have recently moved to electron beam lithography as the higher resolutions permitted will provide the flexibility to begin fabricating sub-micron waveguides

  9. Transformational silicon electronics

    Rojas, Jhonathan Prieto; Sevilla, Galo T.; Ghoneim, Mohamed T.; Inayat, Salman Bin; Ahmed, Sally; Hussain, Aftab M.; Hussain, Muhammad Mustafa

    2014-01-01

    In today's traditional electronics such as in computers or in mobile phones, billions of high-performance, ultra-low-power devices are neatly integrated in extremely compact areas on rigid and brittle but low-cost bulk monocrystalline silicon (100

  10. Silicon oxynitride based photonics

    Worhoff, Kerstin; Klein, E.J.; Hussein, M.G.; Driessen, A.; Marciniak, M.; Jaworski, M.; Zdanowicz, M.

    2008-01-01

    Silicon oxynitride is a very attractive material for integrated optics. Besides possessing excellent optical properties it can be deposited with refractive indices varying over a wide range by tuning the material composition. In this contribution we will summarize the key properties of this material

  11. Electrical leakage phenomenon in heteroepitaxial cubic silicon carbide on silicon

    Pradeepkumar, Aiswarya; Zielinski, Marcin; Bosi, Matteo; Verzellesi, Giovanni; Gaskill, D. Kurt; Iacopi, Francesca

    2018-06-01

    Heteroepitaxial 3C-SiC films on silicon substrates are of technological interest as enablers to integrate the excellent electrical, electronic, mechanical, thermal, and epitaxial properties of bulk silicon carbide into well-established silicon technologies. One critical bottleneck of this integration is the establishment of a stable and reliable electronic junction at the heteroepitaxial interface of the n-type SiC with the silicon substrate. We have thus investigated in detail the electrical and transport properties of heteroepitaxial cubic silicon carbide films grown via different methods on low-doped and high-resistivity silicon substrates by using van der Pauw Hall and transfer length measurements as test vehicles. We have found that Si and C intermixing upon or after growth, particularly by the diffusion of carbon into the silicon matrix, creates extensive interstitial carbon traps and hampers the formation of a stable rectifying or insulating junction at the SiC/Si interface. Although a reliable p-n junction may not be realistic in the SiC/Si system, we can achieve, from a point of view of the electrical isolation of in-plane SiC structures, leakage suppression through the substrate by using a high-resistivity silicon substrate coupled with deep recess etching in between the SiC structures.

  12. Encapsulation of polymer photovoltaic prototypes

    Krebs, Frederik C. [The Danish Polymer Centre, RISOE National Laboratory, P.O. Box 49, DK-4000 Roskilde (Denmark)

    2006-12-15

    A simple and efficient method for the encapsulation of polymer and organic photovoltaic prototypes is presented. The method employs device preparation on glass substrates with subsequent sealing using glass fiber reinforced thermosetting epoxy (prepreg) against a back plate. The method allows for transporting oxygen and water sensitive devices outside a glove box environment after sealing and enables sharing of devices between research groups such that efficiency and stability can be evaluated in different laboratories. (author)

  13. Zeolite encapsulation of H2

    Cooper, S.; Lakner, J.F.

    1982-08-01

    Experiments with H 2 have shown that it is possible to encapsulate gases in the structure of certain molecular sieves. This method may offer a better means of temporarily storing and disposing of tritium over some others presently in use. The method may also prove safer, and may enable isotope separation, and removal of 3 He. Initial experiments were performed with H 2 to screen potential candidates for use with tritium

  14. Label-Free Virus Capture and Release by a Microfluidic Device Integrated with Porous Silicon Nanowire Forest.

    Xia, Yiqiu; Tang, Yi; Yu, Xu; Wan, Yuan; Chen, Yizhu; Lu, Huaguang; Zheng, Si-Yang

    2017-02-01

    Viral diseases are perpetual threats to human and animal health. Detection and characterization of viral pathogens require accurate, sensitive, and rapid diagnostic assays. For field and clinical samples, the sample preparation procedures limit the ultimate performance and utility of the overall virus diagnostic protocols. This study presents the development of a microfluidic device embedded with porous silicon nanowire (pSiNW) forest for label-free size-based point-of-care virus capture in a continuous curved flow design. The pSiNW forests with specific interwire spacing are synthesized in situ on both bottom and sidewalls of the microchannels in a batch process. With the enhancement effect of Dean flow, this study demonstrates that about 50% H5N2 avian influenza viruses are physically trapped without device clogging. A unique feature of the device is that captured viruses can be released by inducing self-degradation of the pSiNWs in physiological aqueous environment. About 60% of captured viruses can be released within 24 h for virus culture, subsequent molecular diagnosis, and other virus characterization and analyses. This device performs viable, unbiased, and label-free virus isolation and release. It has great potentials for virus discovery, virus isolation and culture, functional studies of virus pathogenicity, transmission, drug screening, and vaccine development. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  15. Development of thin film encapsulation process for piezoresistive MEMS gyroscope with wide gaps

    Ayanoor-Vitikkate, Vipin

    The gyroscope is an inertial sensor used to measure the angular rate of a rotating object. This helps to determine the pitch and yaw rate of any moving body. A number of applications have been developed for consumer and automotive markets, for e.g. vehicle stability control, navigation assist, roll over detection. These are primarily used in high-end cars, where cost is not a major factor. Other areas where a MEMS Gyro can be used are robotics, camcorder stabilization, virtual reality, and more. Primarily due to cost and the size most of these applications have not reached any significant volume. One reason for this is the relatively high cost of MEMS gyros compared to other MEMS sensors like accelerometers or pressure sensors. Generally the cost of packaging a MEMS sensor is about 85-90% of the total cost. Currently most MEMS based gyroscopes are made using bulk or surface micromachining, after which they are packaged using wafer bonding. This unfortunately leads to wastage of silicon and increase in the package size, thus reducing the yield. One way to reduce the cost of packaging is by wafer scale thin film encapsulation of MEMS gyroscopes. The goal of the present work is to fabricate a rate grade MEMS gyroscope and encapsulate it by modifying an existing thin-film encapsulation technique. Packaging is an important step towards commercialization of the device and we plan to use thin wafer scale encapsulation technique developed previously in our group to package these devices. The silicon micro machined gyroscope will be fabricated on SOI (Silicon-on-Insulator) wafers using Bosch DRIE etching techniques. The encapsulation of the device is carried out using epitaxial polysilicon in order to provide a high vacuum inside the device chamber. The advantages offered by this technique are the reduction in area of the die and thus less silicon surface is wasted. In addition to this the encapsulation technique helps in creating a vacuum inside the micro device, which

  16. Ultra-thin film encapsulation processes for micro-electro-mechanical devices and systems

    Stoldt, Conrad R; Bright, Victor M

    2006-01-01

    A range of physical properties can be achieved in micro-electro-mechanical systems (MEMS) through their encapsulation with solid-state, ultra-thin coatings. This paper reviews the application of single source chemical vapour deposition and atomic layer deposition (ALD) in the growth of submicron films on polycrystalline silicon microstructures for the improvement of microscale reliability and performance. In particular, microstructure encapsulation with silicon carbide, tungsten, alumina and alumina-zinc oxide alloy ultra-thin films is highlighted, and the mechanical, electrical, tribological and chemical impact of these overlayers is detailed. The potential use of solid-state, ultra-thin coatings in commercial microsystems is explored using radio frequency MEMS as a case study for the ALD alloy alumina-zinc oxide thin film. (topical review)

  17. Enhanced polymeric encapsulation for MEMS based multi sensors for fisheries research

    Birkelund, Karen; Nørgaard, Lars; Thomsen, Erik Vilain

    2011-01-01

    light intensity, temperature, pressure and conductivity. For precise and fast measurements a direct exposure of the sensor to the water is desirable. A potted tube encapsulation concept has shown to be promising for accurate and fast measurements in harsh environment, provided a tight sealing......This paper presents the challenges of a packaged MEMS-based multi sensor system that allow for direct exposure of the sensing part to sea water. The system is part of a data storage tag used on fish to provide the researcher with information on fish behaviour and migration. The sensor measures...... compared to low pressure chemical vapor deposited (LPCVD) silicon nitride and untreated silicon dioxide....

  18. Polyethylene encapsulation full-scale technology demonstration. Final report

    Kalb, P.D.; Lageraaen, P.R.

    1994-10-01

    A full-scale integrated technology demonstration of a polyethylene encapsulation process, sponsored by the US Department of Energy (DOE) Office of Technology Development (OTD), was conducted at the Environmental ampersand Waste Technology Center at Brookhaven National Laboratory (BNL.) in September 1994. As part of the Polymer Solidification National Effort, polyethylene encapsulation has been developed and tested at BNL as an alternative solidification technology for improved, cost-effective treatment of low-level radioactive (LLW), hazardous and mixed wastes. A fully equipped production-scale system, capable of processing 900 kg/hr (2000 lb/hr), has been installed at BNL. The demonstration covered all facets of the integrated processing system including pre-treatment of aqueous wastes, precise feed metering, extrusion processing, on-line quality control monitoring, and process control

  19. On-chip hybrid photonic-plasmonic light concentrator for nanofocusing in an integrated silicon photonics platform.

    Luo, Ye; Chamanzar, Maysamreza; Apuzzo, Aniello; Salas-Montiel, Rafael; Nguyen, Kim Ngoc; Blaize, Sylvain; Adibi, Ali

    2015-02-11

    The enhancement and confinement of electromagnetic radiation to nanometer scale have improved the performances and decreased the dimensions of optical sources and detectors for several applications including spectroscopy, medical applications, and quantum information. Realization of on-chip nanofocusing devices compatible with silicon photonics platform adds a key functionality and provides opportunities for sensing, trapping, on-chip signal processing, and communications. Here, we discuss the design, fabrication, and experimental demonstration of light nanofocusing in a hybrid plasmonic-photonic nanotaper structure. We discuss the physical mechanisms behind the operation of this device, the coupling mechanisms, and how to engineer the energy transfer from a propagating guided mode to a trapped plasmonic mode at the apex of the plasmonic nanotaper with minimal radiation loss. Optical near-field measurements and Fourier modal analysis carried out using a near-field scanning optical microscope (NSOM) show a tight nanofocusing of light in this structure to an extremely small spot of 0.00563(λ/(2n(rmax)))(3) confined in 3D and an exquisite power input conversion of 92%. Our experiments also verify the mode selectivity of the device (low transmission of a TM-like input mode and high transmission of a TE-like input mode). A large field concentration factor (FCF) of about 4.9 is estimated from our NSOM measurement with a radius of curvature of about 20 nm at the apex of the nanotaper. The agreement between our theory and experimental results reveals helpful insights about the operation mechanism of the device, the interplay of the modes, and the gradual power transfer to the nanotaper apex.

  20. Enhancement of the optical Kerr effect exhibited by an integrated configuration of silicon quantum dots and silver nanoparticles

    Lopez-Suarez, A; Benami, A; Tamayo-Rivera L; Reyes-Esqueda, J A; Cheang-Wong, J C; Rodriguez-Fernandez, L; Crespo-Sosa, A; Oliver, A; R Rangel-Rojo; Torres-Torres, C

    2011-01-01

    We present nonlinear refractive results for three different systems produced by ion implantation: high purity silica substrates with silicon quantum dots (Si-QDs), silver nanoparticles (Ag-NPs), and one sample containing both. We used a femtosecond optical Kerr gate (OKG) with 80 fs pulses at 830 nm to investigate the magnitude and response time of their nonlinear response. The Ag-NPs samples were prepared implanting 2 MeV Ag 2+ ions at different fluencies. A sample with 1x10 17 ions/cm 2 showed no discernible Kerr signal, while for one with 2.4x10 17 ions/cm 2 we measured |χ (3) | 1111 = 5.1x10 -11 esu. The Si-QDs sample required irradiation with 1.5 MeV Si 2+ ions, at a 2.5x10 17 ions/cm 2 fluence in order that the OKG results for this sample yielded a similar |χ (3) | 1111 value. The sample containing the Si-QDs was then irradiated by 1 MeV Ag2+ ions at a 4.44 x 10 16 ions/cm 2 fluence and thermally treated, for which afterward we measured |χ (3) | 1111 1.7x10 -10 esu. In all cases the response time was quasi-instantaneous. These results imply that the inclusion of Ag-NPs at low fluence, enhances the nonlinearity of the composite by a factor of around three, and that this is purely electronic in nature. Pump-probe results show that there is not any nonlinear absorption present. We estimate that the confinement effect of the Si-QDs in the sample plays an important role for the excitation of the Surface Plasmon Resonance (SPR) related to the Ag-NPs. A theoretical model that describes the modification of the third order nonlinearity is also presented.

  1. Neuromorphic Silicon Neuron Circuits

    Indiveri, Giacomo; Linares-Barranco, Bernabé; Hamilton, Tara Julia; van Schaik, André; Etienne-Cummings, Ralph; Delbruck, Tobi; Liu, Shih-Chii; Dudek, Piotr; Häfliger, Philipp; Renaud, Sylvie; Schemmel, Johannes; Cauwenberghs, Gert; Arthur, John; Hynna, Kai; Folowosele, Fopefolu; Saighi, Sylvain; Serrano-Gotarredona, Teresa; Wijekoon, Jayawan; Wang, Yingxue; Boahen, Kwabena

    2011-01-01

    Hardware implementations of spiking neurons can be extremely useful for a large variety of applications, ranging from high-speed modeling of large-scale neural systems to real-time behaving systems, to bidirectional brain–machine interfaces. The specific circuit solutions used to implement silicon neurons depend on the application requirements. In this paper we describe the most common building blocks and techniques used to implement these circuits, and present an overview of a wide range of neuromorphic silicon neurons, which implement different computational models, ranging from biophysically realistic and conductance-based Hodgkin–Huxley models to bi-dimensional generalized adaptive integrate and fire models. We compare the different design methodologies used for each silicon neuron design described, and demonstrate their features with experimental results, measured from a wide range of fabricated VLSI chips. PMID:21747754

  2. Neuromorphic silicon neuron circuits

    Giacomo eIndiveri

    2011-05-01

    Full Text Available Hardware implementations of spiking neurons can be extremely useful for a large variety of applications, ranging from high-speed modeling of large-scale neural systems to real-time behaving systems, to bidirectional brain-machine interfaces. The specific circuit solutions used to implement silicon neurons depend on the application requirements. In this paper we describe the most common building blocks and techniques used to implement these circuits, and present an overview of a wide range of neuromorphic silicon neurons, which implement different computational models, ranging from biophysically realistic and conductance based Hodgkin-Huxley models to bi-dimensional generalized adaptive Integrate and Fire models. We compare the different design methodologies used for each silicon neuron design described, and demonstrate their features with experimental results, measured from a wide range of fabricated VLSI chips.

  3. P-111 : a thin film encapsulation stack for PLED and OLED displays

    Assche, van F.J.H.; Vangheluwe, R.T.; Maes, J.W.C.; Mischke, W.S.; Bijker, M.D.; Dings, F.C.; Evers, M.F.J.; Kessels, W.M.M.; Sanden, van de M.C.M.

    2004-01-01

    For a thin film (<1 µm) encapsulation stack consisting of only 3 plasma deposited silicon nitride layers separated by a thin (<100 nm) organic layer, a water permeation rate of below 10–5 g/m2 per day at 50 °C and 50% rH has been measured using the Ca test. PLED lifetimes of over 500 hours at 60 °C

  4. Enhancement of the optical Kerr effect exhibited by an integrated configuration of silicon quantum dots and silver nanoparticles

    Lopez-Suarez, A; Benami, A; Tamayo-Rivera L; Reyes-Esqueda, J A; Cheang-Wong, J C; Rodriguez-Fernandez, L; Crespo-Sosa, A; Oliver, A [Instituto de Fisica, Universidad Nacional Autonoma de Mexico, D. F. 04510 (Mexico); R Rangel-Rojo [Departamento de Optica, Centro de Investigacion CientIfica y de Educacion Superior de Ensenada, Apartado Postal 2732, Ensenada, BC 22860 (Mexico); Torres-Torres, C, E-mail: rrangel@cicese.mx [Seccion de Estudios de Posgrado e Investigacion, ESIME-Z, Instituto Politecnico Nacional, D.F. 07738 (Mexico)

    2011-01-01

    We present nonlinear refractive results for three different systems produced by ion implantation: high purity silica substrates with silicon quantum dots (Si-QDs), silver nanoparticles (Ag-NPs), and one sample containing both. We used a femtosecond optical Kerr gate (OKG) with 80 fs pulses at 830 nm to investigate the magnitude and response time of their nonlinear response. The Ag-NPs samples were prepared implanting 2 MeV Ag{sup 2+} ions at different fluencies. A sample with 1x10{sup 17} ions/cm{sup 2} showed no discernible Kerr signal, while for one with 2.4x10{sup 17} ions/cm{sup 2} we measured |{chi}{sup (3)}|{sub 1111} = 5.1x10{sup -11} esu. The Si-QDs sample required irradiation with 1.5 MeV Si{sup 2+} ions, at a 2.5x10{sup 17} ions/cm{sup 2} fluence in order that the OKG results for this sample yielded a similar |{chi}{sup (3)}|{sub 1111} value. The sample containing the Si-QDs was then irradiated by 1 MeV Ag2+ ions at a 4.44 x 10{sup 16} ions/cm{sup 2} fluence and thermally treated, for which afterward we measured |{chi}{sup (3)}|{sub 1111} 1.7x10{sup -10} esu. In all cases the response time was quasi-instantaneous. These results imply that the inclusion of Ag-NPs at low fluence, enhances the nonlinearity of the composite by a factor of around three, and that this is purely electronic in nature. Pump-probe results show that there is not any nonlinear absorption present. We estimate that the confinement effect of the Si-QDs in the sample plays an important role for the excitation of the Surface Plasmon Resonance (SPR) related to the Ag-NPs. A theoretical model that describes the modification of the third order nonlinearity is also presented.

  5. Perspective of metal encapsulation of waste

    Jardine, L.J.; Steindler, M.J.

    1978-01-01

    A conceptual flow sheet is presented for encapsulating solid, stabilized calcine (e.g., supercalcine) in a solid lead alloy, using existing or developing technologies. Unresolved and potential problem areas of the flow sheet are outlined and suggestions are made as how metal encapsulation might be applied to other solid wastes from the fuel cycle. It is concluded that metal encapsulation is a technique applicable to many forms of solid wastes and is likely to meet future waste isolation criteria and regulations

  6. Collective optical Kerr effect exhibited by an integrated configuration of silicon quantum dots and gold nanoparticles embedded in ion-implanted silica

    Torres-Torres, C; López-Suárez, A; Oliver, A; Can-Uc, B; Rangel-Rojo, R; Tamayo-Rivera, L

    2015-01-01

    The study of the third-order optical nonlinear response exhibited by a composite containing gold nanoparticles and silicon quantum dots nucleated by ion implantation in a high-purity silica matrix is presented. The nanocomposites were explored as an integrated configuration containing two different ion-implanted distributions. The time-resolved optical Kerr gate and z-scan techniques were conducted using 80 fs pulses at a 825 nm wavelength; while the nanosecond response was investigated by a vectorial two-wave mixing method at 532 nm with 1 ns pulses. An ultrafast purely electronic nonlinearity was associated to the optical Kerr effect for the femtosecond experiments, while a thermal effect was identified as the main mechanism responsible for the nonlinear optical refraction induced by nanosecond pulses. Comparative experimental tests for examining the contribution of the Au and Si distributions to the total third-order optical response were carried out. We consider that the additional defects generated by consecutive ion irradiations in the preparation of ion-implanted samples do not notably modify the off-resonance electronic optical nonlinearities; but they do result in an important change for near-resonant nanosecond third-order optical phenomena exhibited by the closely spaced nanoparticle distributions. (paper)

  7. Design and implementation of an integrated architecture for massive parallel data treatment of analogue signals supplied by silicon detectors of very high spatial resolution

    Michel, J.

    1993-02-01

    This doctorate thesis studies an integrated architecture designed to a parallel massive treatment of analogue signals supplied by silicon detectors of very high spatial resolution. The first chapter is an introduction presenting the general outline and the triggering conditions of the spectrometer. Chapter two describes the operational structure of a microvertex detector made of Si micro-plates associated to the measuring chains. Information preconditioning is related to the pre-amplification stage, to the pile-up effects and to the reduction in the time characteristic due to the high counting rates. The chapter three describes the architecture of the analogue delay buffer, makes an analysis of the intrinsic noise and presents the operational testings and input/output control operations. The fourth chapter is devoted to the description of the analogue pulse shape processor and gives also the testings and the corresponding measurements on the circuit. Finally, the chapter five deals with the simplest modeling of the entire conditioning chain. Also, the testings and measuring procedures are here discussed. In conclusion the author presents some prospects for improving the signal-to-noise ratio by summation of the de-convoluted micro-paths. 78 refs., 78 figs., 1 annexe

  8. Vertically aligned CNT growth on a microfabricated silicon heater with integrated temperature control—determination of the activation energy from a continuous thermal gradient

    Engstrøm, Daniel Southcott; Rupesinghe, Nalin L; Teo, Kenneth B K

    2011-01-01

    Silicon microheaters for local growth of a vertically aligned carbon nanotube (VACNT) were fabricated. The microheaters had a four-point-probe structure that measured the silicon conductivity variations in the heated region which is a measure of the temperature. Through FEM simulations the temper...

  9. Characterization of a bonding-in-liquid technique for liquid encapsulation into MEMS devices

    Okayama, Yoshiyuki; Nakahara, Keijiro; Arouette, Xavier; Ninomiya, Takeshi; Matsumoto, Yasuaki; Orimo, Yoshinori; Hotta, Atsushi; Omiya, Masaki; Miki, Norihisa

    2010-01-01

    We demonstrate and characterize a new bonding-in-liquid technique (BiLT) for the encapsulation of liquids in MEMS devices. Liquid encapsulation enables innovative MEMS devices with various functions exploiting the unique characteristics of liquids, such as high deformation and spherical shape due to surface tension. Interfusion of air bubbles, variation of the liquid quantity and leakage of the encapsulated liquid must be avoided, or device performance will deteriorate. In BiLT, two structural layers are passively aligned and brought into contact in a solution, and the encapsulation cavities are filled uniformly with liquid, without air bubbles. A UV-curable resin is used as an adhesive that does not require heat or vacuum to bond the layers, but UV irradiation. DI water, glycerin and phosphate buffer saline were successfully encapsulated in silicon structural layers with PDMS membranes. We experimentally evaluated the bond strengths and alignment accuracy of BiLT in order to provide crucial information for the application of this process to the packaging and/or manufacturing of MEMS devices. Since conventional aligners are not applicable to BiLT, we experimentally evaluated the accuracy of an in-solution passive alignment process, which made use of matching concave and convex structures.

  10. Flexible Thermoelectric Generators on Silicon Fabric

    Sevilla, Galo T.

    2012-11-01

    In this work, the development of a Thermoelectric Generator on Flexible Silicon Fabric is explored to extend silicon electronics for flexible platforms. Low cost, easily deployable plastic based flexible electronics are of great interest for smart textile, wearable electronics and many other exciting applications. However, low thermal budget processing and fundamentally limited electron mobility hinders its potential to be competitive with well established and highly developed silicon technology. The use of silicon in flexible electronics involve expensive and abrasive materials and processes. In this work, high performance flexible thermoelectric energy harvesters are demonstrated from low cost bulk silicon (100) wafers. The fabrication of the micro- harvesters was done using existing silicon processes on silicon (100) and then peeled them off from the original substrate leaving it for reuse. Peeled off silicon has 3.6% thickness of bulk silicon reducing the thermal loss significantly and generating nearly 30% more output power than unpeeled harvesters. The demonstrated generic batch processing shows a pragmatic way of peeling off a whole silicon circuitry after conventional fabrication on bulk silicon wafers for extremely deformable high performance integrated electronics. In summary, by using a novel, low cost process, this work has successfully integrated existing and highly developed fabrication techniques to introduce a flexible energy harvester for sustainable applications.

  11. High-End Silicon PDICs

    H. Zimmermann

    2008-05-01

    Full Text Available An overview on integrated silicon photodiodes and photodiode integrated circuits (PDICs or optoelectronic integrated circuits (OEICs for optical storage systems (OSS and fiber receivers is given. It is demonstrated, that by using low-cost silicon technologies high-performance OEICs being true competitors for some III/V-semiconductor OEICs can be realized. OSS-OEICs with bandwidths of up to 380 MHz and fiber receivers with maximum data rates of up to 11 Gbps are described. Low-cost data comm receivers for plastic optical fibers (POF as well as new circuit concepts for OEICs and highly parallel optical receivers are described also in the following.

  12. Process and device integration for silicon tunnel FETs utilizing isoelectronic trap technology to enhance the ON current

    Mori, Takahiro; Asai, Hidehiro; Fukuda, Koichi; Matsukawa, Takashi

    2018-04-01

    A tunnel FET (TFET) is a candidate replacement for conventional MOSFETs to realize low-power LSI. The most significant issue with the practical application of TFETs concerns their low tunneling current. Si is an indirect-gap material with a low band-to-band tunneling probability and is not favored for the channel. However, a new technology has recently been proposed to enhance the tunneling current in Si-TFETs by utilizing isoelectronic trap (IET) technology. IET technology provides an innovative approach to realizing low-power LSI with TFETs. In this paper, state-of-the-art research on Si-TFETs with IET technology from the viewpoint of process and device integration is reviewed.

  13. Preliminary investigation of cryopreservation by encapsulation ...

    Protocorm-like bodies (PLBs) of Brassidium Shooting Star, a new commercial ornamental orchid hybrid, were cryopreserved by an encapsulation-dehydration technique. The effects of PLB size, various sucrose concentrations in preculture media and sodium alginate concentration for encapsulation were the main ...

  14. Different encapsulation strategies for implanted electronics

    Winkler Sebastian

    2017-09-01

    Full Text Available Recent advancements in implant technology include increasing application of electronic systems in the human body. Hermetic encapsulation of electronic components is necessary, specific implant functions and body environments must be considered. Additional functions such as wireless communication systems require specialized technical solutions for the encapsulation.

  15. Encapsulation of nodal segments of lobelia chinensis

    Weng Hing Thong

    2015-04-01

    Full Text Available Lobelia chinensis served as an important herb in traditional chinese medicine. It is rare in the field and infected by some pathogens. Therefore, encapsulation of axillary buds has been developed for in vitro propagation of L. chinensis. Nodal explants of L. chinensis were used as inclusion materials for encapsulation. Various combinations of calcium chloride and sodium alginate were tested. Encapsulation beads produced by mixing 50 mM calcium chloride and 3.5% sodium alginate supported the optimal in vitro conversion potential. The number of multiple shoots formed by encapsulated nodal segments was not significantly different from the average of shoots produced by non-encapsulated nodal segments. The encapsulated nodal segments regenerated in vitro on different medium. The optimal germination and regeneration medium was Murashige-Skoog medium. Plantlets regenerated from the encapsulated nodal segments were hardened, acclimatized and established well in the field, showing similar morphology with parent plants. This encapsulation technology would serve as an alternative in vitro regeneration system for L. chinensis.

  16. The CMS silicon tracker

    D'Alessandro, R.; Biggeri, U.; Bruzzi, M.; Catacchini, E.; Civinini, C.; Focardi, E.; Lenzi, M.; Loreti, M.; Meschini, M.; Parrini, G.; Pieri, M.; Albergo, S.; Boemi, D.; Potenza, R.; Tricomi, A.; Angarano, M.; Creanza, D.; Palma, M. de; Fiore, L.; Maggi, G.; My, S.; Raso, G.; Selvaggi, G.; Tempesta, P.; Azzi, P.; Bacchetta, N.; Bisello, D.; Candelori, A.; Castro, A.; Da Rold, M.; Giraldo, A.; Martignon, G.; Paccagnella, A.; Stavitsky, I.; Babucci, E.; Bartalini, P.; Bilei, G.M.; Checcucci, B.; Ciampolini, P.; Lariccia, P.; Mantovani, G.; Passeri, D.; Santocchia, A.; Servoli, L.; Wang, Y.; Bagliesi, G.; Basti, A.; Bosi, F.; Borello, L.; Bozzi, C.; Castaldi, R.; Dell'Orso, R.; Giassi, A.; Messineo, A.; Palla, F.; Raffaelli, F.; Sguazzoni, G.; Starodumov, A.; Tonelli, G.; Vannini, C.; Verdini, P.G.; Xie, Z.; Breuker, H.; Caner, A.; Elliott-Peisert, A.; Feld, L.; Glessing, B.; Hammerstrom, R.; Huhtinen, M.; Mannelli, M.; Marchioro, A.; Schmitt, B.; Stefanini, G.; Connotte, J.; Gu, W.H.; Luebelsmeyer, K.; Pandoulas, D.; Siedling, R.; Wittmer, B.; Della Marina, R.; Freudenreich, K.; Lustermann, W.; Viertel, G.; Eklund, C.; Karimaeki, V.; Skog, K.; French, M.; Hall, G.; Mc Evoy, B.; Raymond, M.; Hrubec, J.; Krammer, M.; Piperov, S.; Tuuva, T.; Watts, S.; Silvestris, L.

    1998-01-01

    The new silicon tracker layout (V4) is presented. The system aspects of the construction are discussed together with the expected tracking performance. Because of the high radiation environment in which the detectors will operate, particular care has been devoted to the study of the characteristics of heavily irradiated detectors. This includes studies on performance (charge collection, cluster size, resolution, efficiency) as a function of the bias voltage, integrated fluence, incidence angle and temperature. (author)

  17. Design and Fabrication of Piezoresistive Based Encapsulated Poly-Si Cantilevers for Bio/chemical Sensing

    Krishna, N. P. Vamsi; Murthy, T. R. Srinivasa; Reddy, K. Jayaprakash; Sangeeth, K.; Hegde, G. M.

    Cantilever-based sensing is a growing research field not only within micro regime but also in nano technology. The technology offers a method for rapid, on-line and in-situ monitoring of specific bio/chemical substances by detecting the nanomechanical responses of a cantilever sensor. Cantilever with piezoresistive based detection scheme is more attractive because of its electronics compatibility. Majority of commercially available micromachined piezoresistive sensors are bulk micromachined devices and are fabricated using single crystal silicon wafers. As substrate properties are not important in surface micromachining, the expensive silicon wafers can be replaced by cheaper substrates, such as poly-silicon, glass or plastic. Here we have designed SU-8 based bio/chemical compatible micro electro mechanical device that includes an encapsulated polysilicon piezoresistor for bio/chemical sensing. In this paper we report the design, fabrication and analysis of the encapsulated poly-Si cantilevers. Design and theoretical analysis are carried out using Finite Element Analysis software. For fabrication of poly-silicon piezoresistive cantilevers we followed the surface micromachining process steps. Preliminary characterization of the cantilevers is presented.

  18. A thermal-driven silicon micro xy-stage integrated with piezoresistive sensors for nano-positioning

    Choi, Young-Soo; Zhang, Yan; Lee, Dong-Weon

    2012-01-01

    This paper describes a novel micro xy-stage, driven by double-hot arm horizontal thermal micro-actuators integrated with a piezoresistive sensor (PS) for low-voltage operation and precise control. This micro xy-stage structure is linked with chevron beams and optimized to amplify the displacement generated by the micro-actuators that provide a pull force to the movable platform. The PS employed for in situ displacement detection and feedback control is fabricated at the base of a cold arm, which minimizes the influence of temperature change induced by electro-thermal heating. The micro xy-stage structure is defined through the use of a simple micromachining process, released by backside wet etching with a special tool. For an input power of approximately 44 mW, each chevron actuator provides about 16 µm and the total displacement of the platform is close to 32 µm. The sensitivity of the PS is better than 1 mV µm −1 , obtained from the amplified voltage output of the Wheatstone bridge circuit. The potential applications of the proposed micro xy-stage lie in micro- or nano-manipulation, as well as the positioning of ultra-small objects in nanotechnology. (paper)

  19. Integration and High-Temperature Characterization of Ferroelectric Vanadium-Doped Bismuth Titanate Thin Films on Silicon Carbide

    Ekström, Mattias; Khartsev, Sergiy; Östling, Mikael; Zetterling, Carl-Mikael

    2017-07-01

    4H-SiC electronics can operate at high temperature (HT), e.g., 300°C to 500°C, for extended times. Systems using sensors and amplifiers that operate at HT would benefit from microcontrollers which can also operate at HT. Microcontrollers require nonvolatile memory (NVM) for computer programs. In this work, we demonstrate the possibility of integrating ferroelectric vanadium-doped bismuth titanate (BiTV) thin films on 4H-SiC for HT memory applications, with BiTV ferroelectric capacitors providing memory functionality. Film deposition was achieved by laser ablation on Pt (111)/TiO2/4H-SiC substrates, with magnetron-sputtered Pt used as bottom electrode and thermally evaporated Au as upper contacts. Film characterization by x-ray diffraction analysis revealed predominately (117) orientation. P- E hysteresis loops measured at room temperature showed maximum 2 P r of 48 μC/cm2, large enough for wide read margins. P- E loops were measurable up to 450°C, with losses limiting measurements above 450°C. The phase-transition temperature was determined to be about 660°C from the discontinuity in dielectric permittivity, close to what is achieved for ceramics. These BiTV ferroelectric capacitors demonstrate potential for use in HT NVM applications for SiC digital electronics.

  20. Efficiently-cooled plasmonic amorphous silicon solar cells integrated with a nano-coated heat-pipe plate

    Zhang, Yinan; Du, Yanping; Shum, Clifford; Cai, Boyuan; Le, Nam Cao Hoai; Chen, Xi; Duck, Benjamin; Fell, Christopher; Zhu, Yonggang; Gu, Min

    2016-04-01

    Solar photovoltaics (PV) are emerging as a major alternative energy source. The cost of PV electricity depends on the efficiency of conversion of light to electricity. Despite of steady growth in the efficiency for several decades, little has been achieved to reduce the impact of real-world operating temperatures on this efficiency. Here we demonstrate a highly efficient cooling solution to the recently emerging high performance plasmonic solar cell technology by integrating an advanced nano-coated heat-pipe plate. This thermal cooling technology, efficient for both summer and winter time, demonstrates the heat transportation capability up to ten times higher than those of the metal plate and the conventional wickless heat-pipe plates. The reduction in temperature rise of the plasmonic solar cells operating under one sun condition can be as high as 46%, leading to an approximate 56% recovery in efficiency, which dramatically increases the energy yield of the plasmonic solar cells. This newly-developed, thermally-managed plasmonic solar cell device significantly extends the application scope of PV for highly efficient solar energy conversion.

  1. Formation of multiple levels of porous silicon for buried insulators and conductors in silicon device technologies

    Blewer, Robert S.; Gullinger, Terry R.; Kelly, Michael J.; Tsao, Sylvia S.

    1991-01-01

    A method of forming a multiple level porous silicon substrate for semiconductor integrated circuits including anodizing non-porous silicon layers of a multi-layer silicon substrate to form multiple levels of porous silicon. At least one porous silicon layer is then oxidized to form an insulating layer and at least one other layer of porous silicon beneath the insulating layer is metallized to form a buried conductive layer. Preferably the insulating layer and conductive layer are separated by an anodization barrier formed of non-porous silicon. By etching through the anodization barrier and subsequently forming a metallized conductive layer, a fully or partially insulated buried conductor may be fabricated under single crystal silicon.

  2. Limonene encapsulation in freeze dried gellan systems.

    Evageliou, Vasiliki; Saliari, Dimitra

    2017-05-15

    The encapsulation of limonene in freeze-dried gellan systems was investigated. Surface and encapsulated limonene content was determined by measurement of the absorbance at 252nm. Gellan matrices were both gels and solutions. For a standard gellan concentration (0.5wt%) gelation was induced by potassium or calcium chloride. Furthermore, gellan solutions of varying concentrations (0.25-1wt%) were also studied. Limonene was added at two different concentrations (1 and 2mL/100g sample). Gellan gels encapsulated greater amounts of limonene than solutions. Among all gellan gels, the KCl gels had the greater encapsulated limonene content. However, when the concentration of limonene was doubled in these KCl gels, the encapsulated limonene decreased. The surface limonene content was significant, especially for gellan solutions. The experimental conditions and not the mechanical properties of the matrices were the dominant factor in the interpretation of the observed results. Copyright © 2016 Elsevier Ltd. All rights reserved.

  3. Electrical activation of phosphorus in silicon

    Goh, K.E.J.; Oberbeck, L.; Simmons, M.Y.; Clark, R.G.

    2003-01-01

    Full text: We present studies of phosphorus δ-doping in silicon with a view to determining the degree of electrical activation of the dopants. These results have a direct consequence for the use of phosphorus as a qubit in a silicon-based quantum computer such as that proposed by Kane. Room temperature and 4 K Hall effect measurements are presented for phosphorus δ-doped layers grown in n-type silicon using two different methods. In the first method, the δ-layer was deposited by a phosphorus effusion cell in an MBE chamber. In the second method, the Si surface was dosed with phosphine gas and then annealed to 550 deg C to incorporate P into the substrate. In both methods, the P δ-doped layer was subsequently encapsulated by ∼25 nm of Si grown epitaxially. We discuss the implications of our results on the fabrication of the Kane quantum computer

  4. Full-color OLED on silicon microdisplay

    Ghosh, Amalkumar P.

    2002-02-01

    eMagin has developed numerous enhancements to organic light emitting diode (OLED) technology, including a unique, up- emitting structure for OLED-on-silicon microdisplay devices. Recently, eMagin has fabricated full color SVGA+ resolution OLED microdisplays on silicon, with over 1.5 million color elements. The display is based on white light emission from OLED followed by LCD-type red, green and blue color filters. The color filters are patterned directly on OLED devices following suitable thin film encapsulation and the drive circuits are built directly on single crystal silicon. The resultant color OLED technology, with hits high efficiency, high brightness, and low power consumption, is ideally suited for near to the eye applications such as wearable PCS, wireless Internet applications and mobile phone, portable DVD viewers, digital cameras and other emerging applications.

  5. Enhancing heat capacity of colloidal suspension using nanoscale encapsulated phase-change materials for heat transfer.

    Hong, Yan; Ding, Shujiang; Wu, Wei; Hu, Jianjun; Voevodin, Andrey A; Gschwender, Lois; Snyder, Ed; Chow, Louis; Su, Ming

    2010-06-01

    This paper describes a new method to enhance the heat-transfer property of a single-phase liquid by adding encapsulated phase-change nanoparticles (nano-PCMs), which absorb thermal energy during solid-liquid phase changes. Silica-encapsulated indium nanoparticles and polymer-encapsulated paraffin (wax) nanoparticles have been made using colloid method, and suspended into poly-alpha-olefin (PAO) and water for potential high- and low-temperature applications, respectively. The shells prevent leakage and agglomeration of molten phase-change materials, and enhance the dielectric properties of indium nanoparticles. The heat-transfer coefficients of PAO containing indium nanoparticles (30% by mass) and water containing paraffin nanoparticles (10% by mass) are 1.6 and 1.75 times higher than those of corresponding single-phase fluids. The structural integrity of encapsulation allows repeated use of such nanoparticles for many cycles in high heat generating devices.

  6. Silicon Qubits

    Ladd, Thaddeus D. [HRL Laboratories, LLC, Malibu, CA (United States); Carroll, Malcolm S. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

    2018-02-28

    Silicon is a promising material candidate for qubits due to the combination of worldwide infrastructure in silicon microelectronics fabrication and the capability to drastically reduce decohering noise channels via chemical purification and isotopic enhancement. However, a variety of challenges in fabrication, control, and measurement leaves unclear the best strategy for fully realizing this material’s future potential. In this article, we survey three basic qubit types: those based on substitutional donors, on metal-oxide-semiconductor (MOS) structures, and on Si/SiGe heterostructures. We also discuss the multiple schema used to define and control Si qubits, which may exploit the manipulation and detection of a single electron charge, the state of a single electron spin, or the collective states of multiple spins. Far from being comprehensive, this article provides a brief orientation to the rapidly evolving field of silicon qubit technology and is intended as an approachable entry point for a researcher new to this field.

  7. Plastic encapsulated, dye sensitised photovoltaic cells

    Potter, R.J.; Otley, L.C.; Durrant, J.R.; Haque, S.; Xu, C. [Imperial College of Science, Technology and Medicine, London (United Kingdom); Holmes, A.B.; Park, T.; Schulte, N. [Cambridge Univ. (United Kingdom)

    2004-07-01

    The report presents the results of a collaborative project that aimed to demonstrate the technical feasibility of a plastic-encapsulated, solid state, dye-sensitised solar cell (DSSC) with an energy conversion efficiency (ECE) of at least 3%. DSSCs offer a possible 'step change' in photovoltaic technology resulting in lower costs compared with existing technologies. The project involved a series of eight main tasks: the development of first and second generation HTM electrolytes; the development of polymer-supported electrolytes; the development of low temperature electrode coating procedures; dye development; cell assembly and testing; component integration; and overall process development. A wide range of innovative HTMs have been synthesised, including materials incorporating both hole-transporting and ion-chelating functional groups. The ruthenium-based dye, N3, remained the preferred sensitising component. The project has produced a system that can routinely achieve over 5% ECE at 0.1 Sun illumination on 1 cm{sup 2} cells using polymer-supported electrolytes.

  8. Low surface damage dry etched black silicon

    Plakhotnyuk, Maksym M.; Gaudig, Maria; Davidsen, Rasmus Schmidt

    2017-01-01

    Black silicon (bSi) is promising for integration into silicon solar cell fabrication flow due to its excellent light trapping and low reflectance, and a continuously improving passivation. However, intensive ion bombardment during the reactive ion etching used to fabricate bSi induces surface dam...

  9. Ductile cutting of silicon microstructures with surface inclination measurement and compensation by using a force sensor integrated single point diamond tool

    Chen, Yuan-Liu; Cai, Yindi; Shimizu, Yuki; Ito, So; Gao, Wei; Ju, Bing-Feng

    2016-01-01

    This paper presents a measurement and compensation method of surface inclination for ductile cutting of silicon microstructures by using a diamond tool with a force sensor based on a four-axis ultra-precision lathe. The X- and Y-directional inclinations of a single crystal silicon workpiece with respect to the X- and Y-motion axes of the lathe slides were measured respectively by employing the diamond tool as a touch-trigger probe, in which the tool-workpiece contact is sensitively detected by monitoring the force sensor output. Based on the measurement results, fabrication of silicon microstructures can be thus carried out directly along the tilted silicon workpiece by compensating the cutting motion axis to be parallel to the silicon surface without time-consuming pre-adjustment of the surface inclination or turning of a flat surface. A diamond tool with a negative rake angle was used in the experiment for superior ductile cutting performance. The measurement precision by using the diamond tool as a touch-trigger probe was investigated. Experiments of surface inclination measurement and ultra-precision ductile cutting of a micro-pillar array and a micro-pyramid array with inclination compensation were carried out respectively to demonstrate the feasibility of the proposed method. (paper)

  10. Integrated in vitro approaches to assess the bioaccessibility and bioavailability of silicon-biofortified leafy vegetables and preliminary effects on bone.

    D'Imperio, Massimiliano; Brunetti, Giacomina; Gigante, Isabella; Serio, Francesco; Santamaria, Pietro; Cardinali, Angela; Colucci, Silvia; Minervini, Fiorenza

    2017-03-01

    Food industries are increasingly oriented toward new foods to improve nutritional status and/or to combat nutritional deficiency diseases. In this context, silicon biofortification could be an innovative tool for obtaining new foods with possible positive effects on bone mineralization. In this paper, an alternative and quick in vitro approach was applied in order to evaluate the potential health-promoting effects of five silicon-biofortified leafy vegetables (tatsoi, mizuna, purslane, Swiss chard and chicory) on bone mineralization compared with a commercial silicon supplement. The silicon bioaccessibility and bioavailability of the five leafy vegetables (biofortified or not) and of the supplement were assessed by applying a protocol consisting of in vitro gastrointestinal digestion coupled with a Caco-2 cell model. Silicon bioaccessibility ranged from 0.89 to 8.18 mg/L and bioavailability ranged from 111 to 206 μg/L of Si for both vegetables and supplement. Furthermore, the bioavailable fractions were tested on a human osteoblast cell model following the expression of type 1 collagen and alkaline phosphatase. The results obtained highlighted that the bioavailable fraction of biofortified purslane and Swiss chard improved the expression of both osteoblast markers compared with the supplement and other vegetables. These results underline the potentially beneficial effect of biofortified leafy vegetables and also indicate the usefulness of in vitro approaches for selecting the best vegetable with positive bone effects for further in vivo research.

  11. Nutritional management of encapsulating peritoneal sclerosis with ...

    Keywords: intradialytic parenteral nutrition, nutritional management, encapsulating peritoneal sclerosis ... reflection of fluid retention and the underlying inflammatory process, ... The patient appeared weak and frail, with severe generalised muscle ... was recommended on diagnosis of EPS to prevent further peritoneal.

  12. Silicon photonics for telecommunications and biomedicine

    Fathpour, Sasan

    2011-01-01

    Given silicon's versatile material properties, use of low-cost silicon photonics continues to move beyond light-speed data transmission through fiber-optic cables and computer chips. Its application has also evolved from the device to the integrated-system level. A timely overview of this impressive growth, Silicon Photonics for Telecommunications and Biomedicine summarizes state-of-the-art developments in a wide range of areas, including optical communications, wireless technologies, and biomedical applications of silicon photonics. With contributions from world experts, this reference guides

  13. Rectangular-cladding silicon slot waveguide with improved nonlinear performance

    Huang, Zengzhi; Huang, Qingzhong; Wang, Yi; Xia, Jinsong

    2018-04-01

    Silicon slot waveguides have great potential in hybrid silicon integration to realize nonlinear optical applications. We propose a rectangular-cladding hybrid silicon slot waveguide. Simulation result shows that, with a rectangular-cladding, the slot waveguide can be formed by narrower silicon strips, so the two-photon absorption (TPA) loss in silicon is decreased. When the cladding material is a nonlinear polymer, the calculated TPA figure of merit (FOMTPA) is 4.4, close to the value of bulk nonlinear polymer of 5.0. This value confirms the good nonlinear performance of rectangular-cladding silicon slot waveguides.

  14. Ferroelectric dielectrics integrated on silicon

    Defay, Emmanuel

    2013-01-01

    This book describes up-to-date technology applied to high-K materials for More Than Moore applications, i.e. microsystems applied to microelectronics core technologies.After detailing the basic thermodynamic theory applied to high-K dielectrics thin films including extrinsic effects, this book emphasizes the specificity of thin films. Deposition and patterning technologies are then presented. A whole chapter is dedicated to the major role played in the field by X-Ray Diffraction characterization, and other characterization techniques are also described such as Radio frequency characterizat

  15. Sclerosing encapsulating peritonitis: a case report

    Candido, Paula de Castro Menezes; Werner, Andrea de Freitas; Pereira, Izabela Machado Flores; Matos, Breno Assuncao; Pfeilsticker, Rudolf Moreira; Silva Filho, Raul, E-mail: paulacmcandido@yahoo.com.br [Hospital Felicio Rocho, Belo Horizonte, MG (Brazil)

    2015-01-15

    Sclerosing encapsulating peritonitis, a rare cause of bowel obstruction, was described as a complication associated with peritoneal dialysis which is much feared because of its severity. The authors report a case where radiological findings in association with clinical symptoms have allowed for a noninvasive diagnosis of sclerosing encapsulating peritonitis, emphasizing the high sensitivity and specificity of computed tomography to demonstrate the characteristic findings of such a condition. (author)

  16. Catastrophic degradation of the interface of epitaxial silicon carbide on silicon at high temperatures

    Pradeepkumar, Aiswarya; Mishra, Neeraj; Kermany, Atieh Ranjbar; Iacopi, Francesca [Queensland Micro and Nanotechnology Centre and Environmental Futures Research Institute, Griffith University, Nathan QLD 4111 (Australia); Boeckl, John J. [Materials and Manufacturing Directorate, Air Force Research Laboratories, Wright-Patterson Air Force Base, Ohio 45433 (United States); Hellerstedt, Jack; Fuhrer, Michael S. [Monash Centre for Atomically Thin Materials, Monash University, Monash, VIC 3800 (Australia)

    2016-07-04

    Epitaxial cubic silicon carbide on silicon is of high potential technological relevance for the integration of a wide range of applications and materials with silicon technologies, such as micro electro mechanical systems, wide-bandgap electronics, and graphene. The hetero-epitaxial system engenders mechanical stresses at least up to a GPa, pressures making it extremely challenging to maintain the integrity of the silicon carbide/silicon interface. In this work, we investigate the stability of said interface and we find that high temperature annealing leads to a loss of integrity. High–resolution transmission electron microscopy analysis shows a morphologically degraded SiC/Si interface, while mechanical stress measurements indicate considerable relaxation of the interfacial stress. From an electrical point of view, the diode behaviour of the initial p-Si/n-SiC junction is catastrophically lost due to considerable inter-diffusion of atoms and charges across the interface upon annealing. Temperature dependent transport measurements confirm a severe electrical shorting of the epitaxial silicon carbide to the underlying substrate, indicating vast predominance of the silicon carriers in lateral transport above 25 K. This finding has crucial consequences on the integration of epitaxial silicon carbide on silicon and its potential applications.

  17. Polyphosphonate induced coacervation of chitosan: Encapsulation of proteins/enzymes and their biosensing

    Liu, Hailing; Cui, Yanyun; Li, Pan; Zhou, Yiming; Chen, Yu; Tang, Yawen; Lu, Tianhong

    2013-01-01

    Graphical abstract: Based on the coacervation of chitosan via the ionotropic crosslinking interaction, proteins/enzymes can be encapsulated in situ into chitosan matrix. -- Highlights: •The ionotropic crosslinking interactions result in the coacervation of chitosan. •A phosphonate-assisted encapsulation of proteins in chitosan matrix is introduced. •The encapsulated proteins retain their bioactivity. •The encapsulation method can be used to fabricate various chitosan-based biosensors. -- Abstract: Based on the polyphosphonate-assisted coacervation of chitosan, a simple and versatile procedure for the encapsulation of proteins/enzymes in chitosan–carbon nanotubes (CNTs) composites matrix was developed. Scanning electron microscopy (SEM), transmission electron microscopy (TEM), X-ray photoelectron spectroscopy (XPS), energy dispersive spectrum (EDS) mapping demonstrated the hemoglobin (Hb) uniformly distributed into chitosan–CNTs composites matrix. Raman measurements indicated the CNTs in composites matrix retained the electronic and structural integrities of the pristine CNTs. Fourier transform infrared (FT-IR), ultraviolet–visible (UV–vis) and circular dichroism (CD) spectroscopy displayed the encapsulated Hb preserved their near-native structure, indicating the polyphosphonate–chitosan–CNTs composites possessed excellent biocompatibility for the encapsulation of proteins/enzymes. Electrochemical measurements indicated the encapsulated Hb could directly exchange electron with the substrate electrode. Moreover, the modified electrode showed excellent bioelectrocatalytic activity for the reduction of hydrogen peroxide. Under optimum experimental conditions, the fabricated electrochemical sensor displayed the fast response (less than 3 s), wide linear range (7.0 × 10 −7 to 2.0 × 10 −3 M) and low detection limit (4.0 × 10 −7 M) for the determination of hydrogen peroxide. This newly developed protocol was simple and mild and would certainly

  18. Polyphosphonate induced coacervation of chitosan: Encapsulation of proteins/enzymes and their biosensing

    Liu, Hailing; Cui, Yanyun; Li, Pan; Zhou, Yiming; Chen, Yu, E-mail: ndchenyu@yahoo.cn; Tang, Yawen; Lu, Tianhong

    2013-05-07

    Graphical abstract: Based on the coacervation of chitosan via the ionotropic crosslinking interaction, proteins/enzymes can be encapsulated in situ into chitosan matrix. -- Highlights: •The ionotropic crosslinking interactions result in the coacervation of chitosan. •A phosphonate-assisted encapsulation of proteins in chitosan matrix is introduced. •The encapsulated proteins retain their bioactivity. •The encapsulation method can be used to fabricate various chitosan-based biosensors. -- Abstract: Based on the polyphosphonate-assisted coacervation of chitosan, a simple and versatile procedure for the encapsulation of proteins/enzymes in chitosan–carbon nanotubes (CNTs) composites matrix was developed. Scanning electron microscopy (SEM), transmission electron microscopy (TEM), X-ray photoelectron spectroscopy (XPS), energy dispersive spectrum (EDS) mapping demonstrated the hemoglobin (Hb) uniformly distributed into chitosan–CNTs composites matrix. Raman measurements indicated the CNTs in composites matrix retained the electronic and structural integrities of the pristine CNTs. Fourier transform infrared (FT-IR), ultraviolet–visible (UV–vis) and circular dichroism (CD) spectroscopy displayed the encapsulated Hb preserved their near-native structure, indicating the polyphosphonate–chitosan–CNTs composites possessed excellent biocompatibility for the encapsulation of proteins/enzymes. Electrochemical measurements indicated the encapsulated Hb could directly exchange electron with the substrate electrode. Moreover, the modified electrode showed excellent bioelectrocatalytic activity for the reduction of hydrogen peroxide. Under optimum experimental conditions, the fabricated electrochemical sensor displayed the fast response (less than 3 s), wide linear range (7.0 × 10{sup −7} to 2.0 × 10{sup −3} M) and low detection limit (4.0 × 10{sup −7} M) for the determination of hydrogen peroxide. This newly developed protocol was simple and mild and

  19. Strained silicon as a new electro-optic material

    Jacobsen, Rune Shim; Andersen, Karin Nordström; Borel, Peter Ingo

    2006-01-01

    For decades, silicon has been the material of choice for mass fabrication of electronics. This is in contrast to photonics, where passive optical components in silicon have only recently been realized1, 2. The slow progress within silicon optoelectronics, where electronic and optical...... functionalities can be integrated into monolithic components based on the versatile silicon platform, is due to the limited active optical properties of silicon3. Recently, however, a continuous-wave Raman silicon laser was demonstrated4; if an effective modulator could also be realized in silicon, data...... processing and transmission could potentially be performed by all-silicon electronic and optical components. Here we have discovered that a significant linear electro-optic effect is induced in silicon by breaking the crystal symmetry. The symmetry is broken by depositing a straining layer on top...

  20. Waveguide silicon nitride grating coupler

    Litvik, Jan; Dolnak, Ivan; Dado, Milan

    2016-12-01

    Grating couplers are one of the most used elements for coupling of light between optical fibers and photonic integrated components. Silicon-on-insulator platform provides strong confinement of light and allows high integration. In this work, using simulations we have designed a broadband silicon nitride surface grating coupler. The Fourier-eigenmode expansion and finite difference time domain methods are utilized in design optimization of grating coupler structure. The fully, single etch step grating coupler is based on a standard silicon-on-insulator wafer with 0.55 μm waveguide Si3N4 layer. The optimized structure at 1550 nm wavelength yields a peak coupling efficiency -2.6635 dB (54.16%) with a 1-dB bandwidth up to 80 nm. It is promising way for low-cost fabrication using complementary metal-oxide- semiconductor fabrication process.

  1. Silicon based light-emitting materials and devices

    Chen Weide

    1999-01-01

    Silicon based light-emitting materials and devices are the key to optoelectronic integration. Recently, there has been significant progress in materials engineering methods. The author reviews the latest developments in this area including erbium doped silicon, porous silicon, nanocrystalline silicon and Si/SiO 2 superlattice structures. The incorporation of these different materials into devices is described and future device prospects are assessed

  2. Development of Tandem Amorphous/Microcrystalline Silicon Thin-Film Large-Area See-Through Color Solar Panels with Reflective Layer and 4-Step Laser Scribing for Building-Integrated Photovoltaic Applications

    Chin-Yi Tsai

    2014-01-01

    Full Text Available In this work, tandem amorphous/microcrystalline silicon thin-film large-area see-through color solar modules were successfully designed and developed for building-integrated photovoltaic applications. Novel and key technologies of reflective layers and 4-step laser scribing were researched, developed, and introduced into the production line to produce solar panels with various colors, such as purple, dark blue, light blue, silver, golden, orange, red wine, and coffee. The highest module power is 105 W and the highest visible light transmittance is near 20%.

  3. Micro benchtop optics by bulk silicon micromachining

    Lee, Abraham P.; Pocha, Michael D.; McConaghy, Charles F.; Deri, Robert J.

    2000-01-01

    Micromachining of bulk silicon utilizing the parallel etching characteristics of bulk silicon and integrating the parallel etch planes of silicon with silicon wafer bonding and impurity doping, enables the fabrication of on-chip optics with in situ aligned etched grooves for optical fibers, micro-lenses, photodiodes, and laser diodes. Other optical components that can be microfabricated and integrated include semi-transparent beam splitters, micro-optical scanners, pinholes, optical gratings, micro-optical filters, etc. Micromachining of bulk silicon utilizing the parallel etching characteristics thereof can be utilized to develop miniaturization of bio-instrumentation such as wavelength monitoring by fluorescence spectrometers, and other miniaturized optical systems such as Fabry-Perot interferometry for filtering of wavelengths, tunable cavity lasers, micro-holography modules, and wavelength splitters for optical communication systems.

  4. Study and characterization of an integrated circuit-deposited hydrogenated amorphous silicon sensor for the detection of particles and radiations; Etude et caracterisation d'un capteur en silicium amorphe hydrogene depose sur circuit integre pour la detection de particules et de rayonnements

    Despeisse, M

    2006-03-15

    Next generation experiments at the European laboratory of particle physics (CERN) require particle detector alternatives to actual silicon detectors. This thesis presents a novel detector technology, which is based on the deposition of a hydrogenated amorphous silicon sensor on top of an integrated circuit. Performance and limitations of this technology have been assessed for the first time in this thesis in the context of particle detectors. Specific integrated circuits have been designed and the detector segmentation, the interface sensor-chip and the sensor leakage current have been studied in details. The signal induced by the track of an ionizing particle in the sensor has been characterized and results on the signal speed, amplitude and on the sensor resistance to radiation are presented. The results are promising regarding the use of this novel technology for radiation detection, though limitations have been shown for particle physics application. (author)

  5. Efficient, air-stable colloidal quantum dot solar cells encapsulated using atomic layer deposition of a nanolaminate barrier

    Ip, Alexander H.; Labelle, André J.; Sargent, Edward H.

    2013-01-01

    Atomic layer deposition was used to encapsulate colloidal quantum dot solar cells. A nanolaminate layer consisting of alternating alumina and zirconia films provided a robust gas permeation barrier which prevented device performance degradation over a period of multiple weeks. Unencapsulated cells stored in ambient and nitrogen environments demonstrated significant performance losses over the same period. The encapsulated cell also exhibited stable performance under constant simulated solar illumination without filtration of harsh ultraviolet photons. This monolithically integrated thin film encapsulation method is promising for roll-to-roll processed high efficiency nanocrystal solar cells. © 2013 AIP Publishing LLC.

  6. Efficient, air-stable colloidal quantum dot solar cells encapsulated using atomic layer deposition of a nanolaminate barrier

    Ip, Alexander H.

    2013-12-23

    Atomic layer deposition was used to encapsulate colloidal quantum dot solar cells. A nanolaminate layer consisting of alternating alumina and zirconia films provided a robust gas permeation barrier which prevented device performance degradation over a period of multiple weeks. Unencapsulated cells stored in ambient and nitrogen environments demonstrated significant performance losses over the same period. The encapsulated cell also exhibited stable performance under constant simulated solar illumination without filtration of harsh ultraviolet photons. This monolithically integrated thin film encapsulation method is promising for roll-to-roll processed high efficiency nanocrystal solar cells. © 2013 AIP Publishing LLC.

  7. Influence of elastomeric seal plate surface chemistry on interface integrity in biofouling-prone systems: Evaluation of a hydrophobic "easy-release" silicone-epoxy coating for maintaining water seal integrity of a sliding neoprene/steel interface

    Andolina, Vincent L.

    Attenuated Internal Reflection (MAIR-IR) and Microscopic Infrared Spectroscopy for organic surface compositional details, light microscopy for wear area quantification, and profilometry for surface roughness estimation and wear depth quantification. Pin-on-disc dynamic Coefficient of Friction (CoF) measurements provided data relevant to forecasts of seal integrity in dry, wet and biofouling-influenced sliding contact. Actual wear of neoprene seal material against uncoated and coated steel surfaces, wet and dry, was monitored after both rotary and linear cyclic wear testing, demonstrating significant reductions in elastomer wear areas and depths (and resultant volumes) when the coating was present. Coating the steel eliminated a 270% increase in neoprene surface area wear and an 11-fold increase in seal abrasive volume loss associated with underwater rusting in rotary experiments. Linear testing results confirm coating efficacy by reducing wear area in both loading regimes by about half. No coating delamination was observed, apparently due to a differential distribution of silicone and epoxy ingredients at the air-exposed vs. steel-bonded interfaces demonstrated by IR and EDS methods. Frictional testing revealed higher Coefficients of Friction (CoF) associated with the low-speed sliding of Neoprene over coated rather than uncoated steel surfaces in a wet environment, indicating better potential seal adhesion between the hydrophobic elastomer and coating than between the elastomer and intrinsically hydrophilic uncoated steel. When zebra mussel biofouling debris was present in the articulating joints, CoF was reduced as a result of a water channel path produced between the articulating surfaces by the retained biological matter. Easier release of the biofouling from the low-CST coated surfaces restored the seal integrity more rapidly with further water rinsing. Rapid sliding diminished these biofouling-related differences, but revealed a significant advantage in reducing the Co

  8. High throughput single-cell and multiple-cell micro-encapsulation.

    Lagus, Todd P; Edd, Jon F

    2012-06-15

    ordered encapsulation study demonstrated that over 90% of singly encapsulated HL60 cells under similar flow conditions to those in this study maintained cell membrane integrity. However, the effect of the magnitude and time scales of shear stresses will need to be carefully considered when extrapolating to different cell types and flow parameters. The overlapping of the cell ordering, drop generation, and cell viability aqueous flow rate constraints provides an ideal operational regime for controlled encapsulation of single and multiple cells. Because very few studies address inter-particle train spacing, determining the spacing is most easily done empirically and will depend on channel geometry, flow rate, particle size, and particle concentration. Nonetheless, the equal lateral spacing between trains implies that cells arrive at predictable, consistent time intervals. When drop generation occurs at the same rate at which ordered cells arrive at the nozzle, the cells become encapsulated within the drop in a controlled manner. This technique has been utilized to encapsulate single cells with throughputs on the order of 15 kHz, a significant improvement over previous studies reporting encapsulation rates on the order of 60-160 Hz. In the controlled encapsulation work, over 80% of drops contained one and only one cell, a significant efficiency improvement over Poisson (random) statistics, which predicts less than 40% efficiency on average. In previous controlled encapsulation work, the average number of particles per drop λ was tuned to provide single-cell encapsulation. We hypothesize that through tuning of flow rates, we can efficiently encapsulate any number of cells per drop when λ is equal or close to the number of desired cells per drop. While single-cell encapsulation is valuable in determining individual cell responses from stimuli, multiple-cell encapsulation provides information relating to the interaction of controlled numbers and types of cells. Here we

  9. Encapsulation in the food industry: a review.

    Gibbs, B F; Kermasha, S; Alli, I; Mulligan, C N

    1999-05-01

    Encapsulation involves the incorporation of food ingredients, enzymes, cells or other materials in small capsules. Applications for this technique have increased in the food industry since the encapsulated materials can be protected from moisture, heat or other extreme conditions, thus enhancing their stability and maintaining viability. Encapsulation in foods is also utilized to mask odours or tastes. Various techniques are employed to form the capsules, including spray drying, spray chilling or spray cooling, extrusion coating, fluidized bed coating, liposome entrapment, coacervation, inclusion complexation, centrifugal extrusion and rotational suspension separation. Each of these techniques is discussed in this review. A wide variety of foods is encapsulated--flavouring agents, acids bases, artificial sweeteners, colourants, preservatives, leavening agents, antioxidants, agents with undesirable flavours, odours and nutrients, among others. The use of encapsulation for sweeteners such as aspartame and flavours in chewing gum is well known. Fats, starches, dextrins, alginates, protein and lipid materials can be employed as encapsulating materials. Various methods exist to release the ingredients from the capsules. Release can be site-specific, stage-specific or signalled by changes in pH, temperature, irradiation or osmotic shock. In the food industry, the most common method is by solvent-activated release. The addition of water to dry beverages or cake mixes is an example. Liposomes have been applied in cheese-making, and its use in the preparation of food emulsions such as spreads, margarine and mayonnaise is a developing area. Most recent developments include the encapsulation of foods in the areas of controlled release, carrier materials, preparation methods and sweetener immobilization. New markets are being developed and current research is underway to reduce the high production costs and lack of food-grade materials.

  10. Cytokine production induced by non-encapsulated and encapsulated Porphyromonas gingivalis strains

    Kunnen, A.; Dekker, D.C.; van Pampus, M.G.; Harmsen, H.J.; Aarnoudse, J.G.; Abbas, F.; Faas, M.M.

    Objective: Although the exact reason is not known, encapsulated gram-negative Porphyromonas gingivalis strains are more virulent than non-encapsulated strains. Since difference in virulence properties may be due to difference in cytokine production following recognition of the bacteria or their

  11. Silicon photonics III systems and applications

    Lockwood, David

    2016-01-01

    This book is volume III of a series of books on silicon photonics. It reports on the development of fully integrated systems where many different photonics component are integrated together to build complex circuits. This is the demonstration of the fully potentiality of silicon photonics. It contains a number of chapters written by engineers and scientists of the main companies, research centers and universities active in the field. It can be of use for all those persons interested to know the potentialities and the recent applications of silicon photonics both in microelectronics, telecommunication and consumer electronics market.

  12. Geochemistry of silicon isotopes

    Ding, Tiping; Li, Yanhe; Gao, Jianfei; Hu, Bin [Chinese Academy of Geological Science, Beijing (China). Inst. of Mineral Resources; Jiang, Shaoyong [China Univ. of Geosciences, Wuhan (China).

    2018-04-01

    Silicon is one of the most abundant elements in the Earth and silicon isotope geochemistry is important in identifying the silicon source for various geological bodies and in studying the behavior of silicon in different geological processes. This book starts with an introduction on the development of silicon isotope geochemistry. Various analytical methods are described and compared with each other in detail. The mechanisms of silicon isotope fractionation are discussed, and silicon isotope distributions in various extraterrestrial and terrestrial reservoirs are updated. Besides, the applications of silicon isotopes in several important fields are presented.

  13. Encapsulation layer design and scalability in encapsulated vertical 3D RRAM

    Yu, Muxi; Fang, Yichen; Wang, Zongwei; Chen, Gong; Pan, Yue; Yang, Xue; Yin, Minghui; Yang, Yuchao; Li, Ming; Cai, Yimao; Huang, Ru

    2016-01-01

    Here we propose a novel encapsulated vertical 3D RRAM structure with each resistive switching cell encapsulated by dielectric layers, contributing to both the reliability improvement of individual cells and thermal disturbance reduction of adjacent cells due to the effective suppression of unwanted oxygen vacancy diffusion. In contrast to the traditional vertical 3D RRAM, encapsulated bar-electrodes are adopted in the proposed structure substituting the previous plane-electrodes, thus encapsulated resistive switching cells can be naturally formed by simply oxidizing the tip of the metal bar-electrodes. In this work, TaO x -based 3D RRAM devices with SiO 2 and Si 3 N 4 as encapsulation layers are demonstrated, both showing significant advantages over traditional unencapsulated vertical 3D RRAM. Furthermore, it was found thermal conductivity and oxygen blocking ability are two key parameters of the encapsulation layer design influencing the scalability of vertical 3D RRAM. Experimental and simulation data show that oxygen blocking ability is more critical for encapsulation layers in the relatively large scale, while thermal conductivity becomes dominant as the stacking layers scale to the sub-10 nm regime. Finally, based on the notable impacts of the encapsulation layer on 3D RRAM scaling, an encapsulation material with both excellent oxygen blocking ability and high thermal conductivity such as AlN is suggested to be highly desirable to maximize the advantages of the proposed encapsulated structure. The findings in this work could pave the way for reliable ultrahigh-density storage applications in the big data era. (paper)

  14. On-chip Magnetic Separation and Cell Encapsulation in Droplets

    Chen, A.; Byvank, T.; Bharde, A.; Miller, B. L.; Chalmers, J. J.; Sooryakumar, R.; Chang, W.-J.; Bashir, R.

    2012-02-01

    The demand for high-throughput single cell assays is gaining importance because of the heterogeneity of many cell suspensions, even after significant initial sorting. These suspensions may display cell-to-cell variability at the gene expression level that could impact single cell functional genomics, cancer, stem-cell research and drug screening. The on-chip monitoring of individual cells in an isolated environment could prevent cross-contamination, provide high recovery yield and ability to study biological traits at a single cell level These advantages of on-chip biological experiments contrast to conventional methods, which require bulk samples that provide only averaged information on cell metabolism. We report on a device that integrates microfluidic technology with a magnetic tweezers array to combine the functionality of separation and encapsulation of objects such as immunomagnetically labeled cells or magnetic beads into pico-liter droplets on the same chip. The ability to control the separation throughput that is independent of the hydrodynamic droplet generation rate allows the encapsulation efficiency to be optimized. The device can potentially be integrated with on-chip labeling and/or bio-detection to become a powerful single-cell analysis device.

  15. Type I Clathrates as Novel Silicon Anodes: An Electrochemical and Structural Investigation

    Li, Ying; Raghavan, Rahul; Wagner, Nicholas A.; Davidowski, Stephen K.; Baggetto, Lo?c; Zhao, Ran; Cheng, Qian; Yarger, Jeffery L.; Veith, Gabriel M.; Ellis?Terrell, Carol; Miller, Michael A.; Chan, Kwai S.; Chan, Candace K.

    2015-01-01

    Silicon clathrates contain cage?like structures that can encapsulate various guest atoms or molecules. An electrochemical evaluation of type I silicon clathrates based on Ba8Al y Si46?y as the anode material for lithium?ion batteries is presented here. Postcycling characterization with nuclear magnetic resonance and X?ray diffraction shows no discernible structural or volume changes even after electrochemical insertion of 44 Li (?1 Li/Si) into the clathrate structure. The observed properties ...

  16. Comparison of the Acidity of Heteropolyacids Encapsulated in or Impregnated on SBA-15

    Pinto Teresa

    2016-03-01

    Full Text Available Heteropolyacids (HPA immobilized onto SBA-15 silica were prepared by two different ways using either impregnation or encapsulation methodologies. Two Keggin-type HPA, H3PW12O40 and H4SiW12O40 were considered in this study. The resulting hybrid materials were fully characterized by N2 adsorption-desorption isotherms, XRD, FT-IR, Raman, diffuse reflectance UV-Vis spectroscopies and 31P MAS NMR. All characterization methods showed that at room temperature the catalysts contained well-dispersed and intact Keggin units throughout the solid. The catalytic activity of these solids was investigated in the isomerization of n-hexane. The impregnated and encapsulated phosphotungstic catalysts performed similarly in catalysis showing that the amount of active sites was nearly the same in both catalysts. On the contrary, the tungstosilicic encapsulated material was completely inactive while its impregnated counterpart was even more active than the phosphotungstic derived catalysts. The acidity of the solids was measured by various methods: microcalorimetry of ammonia adsorption, ammonia desorption followed by Temperature Programmed Desorption (TPD and DRIFT/GC-MS and pyridine adsorption followed by infrared spectroscopy. Only pyridine adsorption and ammonia desorption followed by DRIFT/GC-MS agreed with the catalytic data. Ammonia adsorption followed by microcalorimetry was not able to differentiate between the four catalysts while the TPD experiments led to unreliable results, as not only the evolved ammonia but also other molecules such as water were taken into account in the measurements. The behavior difference between the encapsulated silico- and phosphotungstic acids was explained by a more pronounced encapsulation in the case of silicon.

  17. UV radiation hardness of silicon inversion layer solar cells

    Hezel, R.

    1990-01-01

    For full utilization of the high spectral response of inversion layer solar cells in the very-short-wavelength range of the solar spectrum sufficient ultraviolet-radiation hardness is required. In addition to the charge-induced passivation achieved by cesium incorporation into the silicon nitride AR coating, in this paper the following means for further drastic reduction of UV light-induced effects in inversion layer solar cells without encapsulation are introduced and interpretations are given: increasing the nitride deposition temperature, silicon surface oxidation at low temperatures, and texture etching and using higher substrate resistivities. High UV radiation tolerance and improvement of the cell efficiency could be obtained simultaneously

  18. Integration

    Emerek, Ruth

    2004-01-01

    Bidraget diskuterer de forskellige intergrationsopfattelse i Danmark - og hvad der kan forstås ved vellykket integration......Bidraget diskuterer de forskellige intergrationsopfattelse i Danmark - og hvad der kan forstås ved vellykket integration...

  19. Suppression of intrinsic roughness in encapsulated graphene

    Thomsen, Joachim Dahl; Gunst, Tue; Gregersen, Søren Schou

    2017-01-01

    Roughness in graphene is known to contribute to scattering effects which lower carrier mobility. Encapsulating graphene in hexagonal boron nitride (hBN) leads to a significant reduction in roughness and has become the de facto standard method for producing high-quality graphene devices. We have...... fabricated graphene samples encapsulated by hBN that are suspended over apertures in a substrate and used noncontact electron diffraction measurements in a transmission electron microscope to measure the roughness of encapsulated graphene inside such structures. We furthermore compare the roughness...... of these samples to suspended bare graphene and suspended graphene on hBN. The suspended heterostructures display a root mean square (rms) roughness down to 12 pm, considerably less than that previously reported for both suspended graphene and graphene on any substrate and identical within experimental error...

  20. Encapsulation - how it will be achieved

    Barlow, P.

    1990-01-01

    The work of the new Encapsulation Plant at British Nuclear Fuel Limited's (BNFL) Sellafield site is described in this article. Intermediate-level radioactive materials are encapsulated in a cement matrix in 500 litre stainless steel drums suitable for storage, transport and disposal. The drums will be stored in an above-ground air-cooled store until UK Nirex Limited have built the planned underground disposal facility. The concept of product specification is explored as it applies to the four stages of nuclear waste management, namely, processing, storage, transport and disposal. By following this approach the encapsulation plant will work within government regulations and the public concerns over safety and environmental issues can be met. U.K

  1. Characterization of 13 and 30 μm thick hydrogenated amorphous silicon diodes deposited over CMOS integrated circuits for particle detection application

    Despeisse, M.; Anelli, G.; Commichau, S.; Dissertori, G.; Garrigos, A.; Jarron, P.; Miazza, C.; Moraes, D.; Shah, A.; Wyrsch, N.; Viertel, G.

    2004-01-01

    We present the experimental results obtained with a novel monolithic silicon pixel detector which consists in depositing a n-i-p hydrogenated amorphous silicon (a-Si:H) diode straight above the readout ASIC (this technology is called Thin Film on ASIC, TFA). The characterization has been performed on 13 and 30 μm thick a-Si:H films deposited on top of an ASIC containing a linear array of high-speed low-noise transimpedance amplifiers designed in a 0.25 μm CMOS technology. Experimental results presented have been obtained with a 600 nm pulsed laser. The results of charge collection efficiency and charge collection speed of these structures are discussed

  2. Tin (Sn) for enhancing performance in silicon CMOS

    Hussain, Aftab M.; Fahad, Hossain M.; Singh, Nirpendra; Sevilla, Galo T.; Schwingenschlö gl, Udo; Hussain, Muhammad Mustafa

    2013-01-01

    We study a group IV element: tin (Sn) by integrating it into silicon lattice, to enhance the performance of silicon CMOS. We have evaluated the electrical properties of the SiSn lattice by performing simulations using First-principle studies, followed by experimental device fabrication and characterization. We fabricated high-κ/metal gate based Metal-Oxide-Semiconductor capacitors (MOSCAPs) using SiSn as channel material to study the impact of Sn integration into silicon. © 2013 IEEE.

  3. Tin (Sn) for enhancing performance in silicon CMOS

    Hussain, Aftab M.

    2013-10-01

    We study a group IV element: tin (Sn) by integrating it into silicon lattice, to enhance the performance of silicon CMOS. We have evaluated the electrical properties of the SiSn lattice by performing simulations using First-principle studies, followed by experimental device fabrication and characterization. We fabricated high-κ/metal gate based Metal-Oxide-Semiconductor capacitors (MOSCAPs) using SiSn as channel material to study the impact of Sn integration into silicon. © 2013 IEEE.

  4. Hybrid III-V/silicon lasers

    Kaspar, P.; Jany, C.; Le Liepvre, A.; Accard, A.; Lamponi, M.; Make, D.; Levaufre, G.; Girard, N.; Lelarge, F.; Shen, A.; Charbonnier, P.; Mallecot, F.; Duan, G.-H.; Gentner, J.-.; Fedeli, J.-M.; Olivier, S.; Descos, A.; Ben Bakir, B.; Messaoudene, S.; Bordel, D.; Malhouitre, S.; Kopp, C.; Menezo, S.

    2014-05-01

    The lack of potent integrated light emitters is one of the bottlenecks that have so far hindered the silicon photonics platform from revolutionizing the communication market. Photonic circuits with integrated light sources have the potential to address a wide range of applications from short-distance data communication to long-haul optical transmission. Notably, the integration of lasers would allow saving large assembly costs and reduce the footprint of optoelectronic products by combining photonic and microelectronic functionalities on a single chip. Since silicon and germanium-based sources are still in their infancy, hybrid approaches using III-V semiconductor materials are currently pursued by several research laboratories in academia as well as in industry. In this paper we review recent developments of hybrid III-V/silicon lasers and discuss the advantages and drawbacks of several integration schemes. The integration approach followed in our laboratory makes use of wafer-bonded III-V material on structured silicon-on-insulator substrates and is based on adiabatic mode transfers between silicon and III-V waveguides. We will highlight some of the most interesting results from devices such as wavelength-tunable lasers and AWG lasers. The good performance demonstrates that an efficient mode transfer can be achieved between III-V and silicon waveguides and encourages further research efforts in this direction.

  5. High surface area silicon materials: fundamentals and new technology.

    Buriak, Jillian M

    2006-01-15

    Crystalline silicon forms the basis of just about all computing technologies on the planet, in the form of microelectronics. An enormous amount of research infrastructure and knowledge has been developed over the past half-century to construct complex functional microelectronic structures in silicon. As a result, it is highly probable that silicon will remain central to computing and related technologies as a platform for integration of, for instance, molecular electronics, sensing elements and micro- and nanoelectromechanical systems. Porous nanocrystalline silicon is a fascinating variant of the same single crystal silicon wafers used to make computer chips. Its synthesis, a straightforward electrochemical, chemical or photochemical etch, is compatible with existing silicon-based fabrication techniques. Porous silicon literally adds an entirely new dimension to the realm of silicon-based technologies as it has a complex, three-dimensional architecture made up of silicon nanoparticles, nanowires, and channel structures. The intrinsic material is photoluminescent at room temperature in the visible region due to quantum confinement effects, and thus provides an optical element to electronic applications. Our group has been developing new organic surface reactions on porous and nanocrystalline silicon to tailor it for a myriad of applications, including molecular electronics and sensing. Integration of organic and biological molecules with porous silicon is critical to harness the properties of this material. The construction and use of complex, hierarchical molecular synthetic strategies on porous silicon will be described.

  6. Performance evaluation soil samples utilizing encapsulation technology

    Dahlgran, James R.

    1999-01-01

    Performance evaluation soil samples and method of their preparation using encapsulation technology to encapsulate analytes which are introduced into a soil matrix for analysis and evaluation by analytical laboratories. Target analytes are mixed in an appropriate solvent at predetermined concentrations. The mixture is emulsified in a solution of polymeric film forming material. The emulsified solution is polymerized to form microcapsules. The microcapsules are recovered, quantitated and introduced into a soil matrix in a predetermined ratio to form soil samples with the desired analyte concentration.

  7. Encapsulated social perception of emotional expressions.

    Smortchkova, Joulia

    2017-01-01

    In this paper I argue that the detection of emotional expressions is, in its early stages, informationally encapsulated. I clarify and defend such a view via the appeal to data from social perception on the visual processing of faces, bodies, facial and bodily expressions. Encapsulated social perception might exist alongside processes that are cognitively penetrated, and that have to do with recognition and categorization, and play a central evolutionary function in preparing early and rapid responses to the emotional stimuli. Copyright © 2016 Elsevier Inc. All rights reserved.

  8. Suitability of cement encapsulated ILW for transport

    Fitzpatrick, J.

    1989-01-01

    ILW arising during the reprocessing of nuclear fuel is to be encapsulated in cement in nominal 500-litre drums. It is important that the waste package produced can be safely transported to a deep repository. Preliminary assessments of the performances of waste packages during transport for a number of the ILW streams to be generated at Sellafield have been carried out. The results show that the proposed encapsulation process produces a waste package which can be transported to an acceptable standard of safety and which does not prejudice any aspects of transport. (author)

  9. Chitosan/siRNA nanoparticles encapsulated in PLGA nanofibers for siRNA delivery

    Chen, Menglin; Gao, Shan; Dong, Mingdong

    2012-01-01

    Composite nanofibers of biodegradable poly(d,l-lactic-co-glycolic acid) (PLGA) encapsulating chitosan/siRNA nanoparticles (NPs) were prepared by electrospinning. Acidic/alkaline hydrolysis and a bulk/surface degradation mechanism were investigated in order to achieve an optimized release profile...... for prolonged and efficient gene silencing. Thermo-controlled AFM in situ imaging not only revealed the integrity of the encapsulated chitosan/siRNA polyplex but also shed light on the decreasing Tg of PLGA on the fiber surfaces during release. A triphasic release profile based on bulk erosion was obtained at p......RNA transfection, where the encapsulated chitosan/siRNA NPs exhibited up to 50% EGFP gene silencing activity after 48 h post-transfection on H1299 cells....

  10. [Encapsulation of a mechatronic implant that restores the ability to accommodate].

    Rheinschmitt, L; Gengenbach, U; Bretthauer, G

    2010-12-01

    In order to restore the ability of accommodation of the human eye, a lens implant manufactured by micro system technology can be used. This highly integrated Artificial Accommodation System contains sensitive electronics as well as moving components in order to adapt its refractive power. One challenge of the production of this system is the encapsulation. It has to be a biocompatible and long-term reliable package. In this paper the advantages of a hermetic glass package over other approaches of encapsulation are introduced. Concepts of production for a glass package are presented. The package is thereby optimised to be placed in the optical path of the eye, but it can also be used for the encapsulation of other implants. © Georg Thieme Verlag KG Stuttgart · New York.

  11. [Integrity].

    Gómez Rodríguez, Rafael Ángel

    2014-01-01

    To say that someone possesses integrity is to claim that that person is almost predictable about responses to specific situations, that he or she can prudentially judge and to act correctly. There is a closed interrelationship between integrity and autonomy, and the autonomy rests on the deeper moral claim of all humans to integrity of the person. Integrity has two senses of significance for medical ethic: one sense refers to the integrity of the person in the bodily, psychosocial and intellectual elements; and in the second sense, the integrity is the virtue. Another facet of integrity of the person is la integrity of values we cherish and espouse. The physician must be a person of integrity if the integrity of the patient is to be safeguarded. The autonomy has reduced the violations in the past, but the character and virtues of the physician are the ultimate safeguard of autonomy of patient. A field very important in medicine is the scientific research. It is the character of the investigator that determines the moral quality of research. The problem arises when legitimate self-interests are replaced by selfish, particularly when human subjects are involved. The final safeguard of moral quality of research is the character and conscience of the investigator. Teaching must be relevant in the scientific field, but the most effective way to teach virtue ethics is through the example of the a respected scientist.

  12. Basic opto-electronics on silicon for sensor applications

    Joppe, J.L.; Bekman, H.H.P.Th.; de Krijger, A.J.T.; Albers, H.; Chalmers, J.; Chalmers, J.D.; Holleman, J.; Ikkink, T.J.; Ikkink, T.; van Kranenburg, H.; Zhou, M.-J.; Zhou, Ming-Jiang; Lambeck, Paul

    1994-01-01

    A general platform for integrated opto-electronic sensor systems on silicon is proposed. The system is based on a hybridly integrated semiconductor laser, ZnO optical waveguides and monolithic photodiodes and electronic circuiry.

  13. Silicon Micromachined Microlens Array for THz Antennas

    Lee, Choonsup; Chattopadhyay, Goutam; Mehdi, IImran; Gill, John J.; Jung-Kubiak, Cecile D.; Llombart, Nuria

    2013-01-01

    5 5 silicon microlens array was developed using a silicon micromachining technique for a silicon-based THz antenna array. The feature of the silicon micromachining technique enables one to microfabricate an unlimited number of microlens arrays at one time with good uniformity on a silicon wafer. This technique will resolve one of the key issues in building a THz camera, which is to integrate antennas in a detector array. The conventional approach of building single-pixel receivers and stacking them to form a multi-pixel receiver is not suited at THz because a single-pixel receiver already has difficulty fitting into mass, volume, and power budgets, especially in space applications. In this proposed technique, one has controllability on both diameter and curvature of a silicon microlens. First of all, the diameter of microlens depends on how thick photoresist one could coat and pattern. So far, the diameter of a 6- mm photoresist microlens with 400 m in height has been successfully microfabricated. Based on current researchers experiences, a diameter larger than 1-cm photoresist microlens array would be feasible. In order to control the curvature of the microlens, the following process variables could be used: 1. Amount of photoresist: It determines the curvature of the photoresist microlens. Since the photoresist lens is transferred onto the silicon substrate, it will directly control the curvature of the silicon microlens. 2. Etching selectivity between photoresist and silicon: The photoresist microlens is formed by thermal reflow. In order to transfer the exact photoresist curvature onto silicon, there needs to be etching selectivity of 1:1 between silicon and photoresist. However, by varying the etching selectivity, one could control the curvature of the silicon microlens. The figure shows the microfabricated silicon microlens 5 x5 array. The diameter of the microlens located in the center is about 2.5 mm. The measured 3-D profile of the microlens surface has a

  14. Will silicon be the photonic material of the third millenium?

    Pavesi, L

    2003-01-01

    Silicon microphotonics, a technology which merges photonics and silicon microelectronic components, is rapidly evolving. Many different fields of application are emerging: transceiver modules for optical communication systems, optical bus systems for ULSI circuits, I/O stages for SOC, displays, .... In this review I will give a brief motivation for silicon microphotonics and try to give the state-of-the-art of this technology. The ingredient still lacking is the silicon laser: a review of the various approaches will be presented. Finally, I will try to draw some conclusions where silicon is predicted to be the material to achieve a full integration of electronic and optical devices. (topical review)

  15. Encapsulation of thermal energy storage media

    Dhau, Jaspreet; Goswami, Dharendra; Jotshi, Chand K.; Stefanakos, Elias K.

    2017-09-19

    In one embodiment, a phase change material is encapsulated by forming a phase change material pellet, coating the pellet with flexible material, heating the coated pellet to melt the phase change material, wherein the phase change materials expands and air within the pellet diffuses out through the flexible material, and cooling the coated pellet to solidify the phase change material.

  16. Antidiabetic Activity from Gallic Acid Encapsulated Nanochitosan

    Purbowatiningrum; Ngadiwiyana; Ismiyarto; Fachriyah, E.; Eviana, I.; Eldiana, O.; Amaliyah, N.; Sektianingrum, A. N.

    2017-02-01

    Diabetes mellitus (DM) has become a health problem in the world because it causes death. One of the phenolic compounds that have antidiabetic activity is gallic acid. However, the use of this compound still provides unsatisfactory results due to its degradation during the absorption process. The solution offered to solve the problem is by encapsulated it within chitosan nanoparticles that serve to protect the bioactive compound from degradation, increases of solubility and delivery of a bioactive compound to the target site by using freeze-drying technique. The result of chitosan nanoparticle’s Scanning Electron Microscopy (SEM) showed that chitosan nanoparticle’s size is uniform and it is smaller than chitosan. The value of encapsulation efficiency (EE) of gallic acid which encapsulated within chitosan nanoparticles is about 50.76%. Inhibition test result showed that gallic acid-chitosan nanoparticles at 50 ppm could inhibite α-glucosidase activity in 28.87% with 54.94 in IC50. So it can be concluded that gallic acid can be encapsulated in nanoparticles of chitosan and proved that it could inhibit α-glucosidase.

  17. Magic ferritin: A novel chemotherapeutic encapsulation bullet

    Simsek, Ece; Akif Kilic, Mehmet

    2005-01-01

    The dissociation of apoferritin into subunits at pH 2 followed by its reformation at pH 7.4 in the presence of doxorubicin-HCl gives rise to a solution containing five doxorubicin-HCl molecules trapped within the apoferritin. This is the first report showing that ferritin can encapsulate an anti-cancer drug into its cavity

  18. Bioactive Compounds And Encapsulation Of Yanang ( Tiliacora ...

    Furthermore, this paper reports the design of the experimental method for optimization of Yanang encapsulation using three independent variables: the ratio of core material (Yanang), to wall material (gum Arabic), gum Arabic concentration and inlet temperature of spray drying on bioactive compounds stability. The stability ...

  19. Secure Hybrid Encryption from Weakened Key Encapsulation

    D. Hofheinz (Dennis); E. Kiltz (Eike); A. Menezes

    2007-01-01

    textabstractWe put forward a new paradigm for building hybrid encryption schemes from constrained chosen-ciphertext secure (CCCA) key-encapsulation mechanisms (KEMs) plus authenticated symmetric encryption. Constrained chosen-ciphertext security is a new security notion for KEMs that we propose. It

  20. Anisotropic silica mesostructures for DNA encapsulation

    The encapsulation of biomolecules in inert meso or nanostructures is an important step towards controlling drug delivery agents. Mesoporous silica nanoparticles (MSN) are of immense importance owing to their high surface area, large pore size, uniform particle size and chemical inertness. Reverse micellar method with ...

  1. Factors influencing insulin secretion from encapsulated islets

    de Haan, BJ; Faas, MM; de Vos, P

    2003-01-01

    Adequate regulation of glucose levels by a microencapsulated pancreatic islet graft requires a minute-to-minute regulation of blood glucose. To design such a transplant, it is mandatory to have sufficient insight in factors influencing the kinetics of insulin secretion by encapsulated islets. The

  2. Nanoprecipitation process: From encapsulation to drug delivery.

    Martínez Rivas, Claudia Janeth; Tarhini, Mohamad; Badri, Waisudin; Miladi, Karim; Greige-Gerges, Hélène; Nazari, Qand Agha; Galindo Rodríguez, Sergio Arturo; Román, Rocío Álvarez; Fessi, Hatem; Elaissari, Abdelhamid

    2017-10-30

    Drugs encapsulation is a suitable strategy in order to cope with the limitations of conventional dosage forms such as unsuitable bioavailability, stability, taste, and odor. Nanoprecipitation technique has been used in the pharmaceutical and agricultural research as clean alternative for other drug carrier formulations. This technique is based on precipitation mechanism. Polymer precipitation occurs after the addition of a non-solvent to a polymer solution in four steps mechanism: supersaturation, nucleation, growth by condensation, and growth by coagulation that leads to the formation of polymer nanoparticles or aggregates. The scale-up of laboratory-based nanoprecipitation method shows a good reproducibility. In addition, flash nanoprecipitation is a good strategy for industrial scale production of nanoparticles. Nanoprecipitation is usually used for encapsulation of hydrophobic or hydrophilic compounds. Nanoprecipitation was also shown to be a good alternative for the encapsulation of natural compounds. As a whole, process and formulation related parameters in nanoprecipitation technique have critical effect on nanoparticles characteristics. Biodegradable or non-biodegradable polymers have been used for the preparation of nanoparticles intended to in vivo studies. Literature studies have demonstrated the biodistribution of the active loaded nanoparticles in different organs after administration via various routes. In general, in vitro drug release from nanoparticles prepared by nanoprecipitation includes two phases: a first phase of "burst release" which is followed by a second phase of prolonged release. Moreover, many encapsulated active molecules have been commercialized in the pharmaceutical market. Copyright © 2017 Elsevier B.V. All rights reserved.

  3. Nano spray drying for encapsulation of pharmaceuticals.

    Arpagaus, Cordin; Collenberg, Andreas; Rütti, David; Assadpour, Elham; Jafari, Seid Mahdi

    2018-05-17

    Many pharmaceuticals such as pills, capsules, or tablets are prepared in a dried and powdered form. In this field, spray drying plays a critical role to convert liquid pharmaceutical formulations into powders. In addition, in many cases it is necessary to encapsulate bioactive drugs into wall materials to protect them against harsh process and environmental conditions, as well as to deliver the drug to the right place and at the correct time within the body. Thus, spray drying is a common process used for encapsulation of pharmaceuticals. In view of the rapid progress of nanoencapsulation techniques in pharmaceutics, nano spray drying is used to improve drug formulation and delivery. The nano spray dryer developed in the recent years provides ultrafine powders at nanoscale and high product yields. In this paper, after explaining the concept of nano spray drying and understanding the key elements of the equipment, the influence of the process parameters on the final powders properties, like particle size, morphology, encapsulation efficiency, drug loading and release, will be discussed. Then, numerous application examples are reviewed for nano spray drying and encapsulation of various drugs in the early stages of product development along with a brief overview of the obtained results and characterization techniques. Copyright © 2018 Elsevier B.V. All rights reserved.

  4. Antidiabetic activity from cinnamaldydhe encapsulated by nanochitosan

    Purbowatingrum; Ngadiwiyana; Fachriyah, E.; Ismiyarto; Ariestiani, B.; Khikmah

    2018-04-01

    Diabetes mellitus (DM) is a disease characterized by chronic hyperglycemia and metabolic disorders of carbohydrates, proteins, and fats due to reduced function of insulin. Treatment of diabetes can be done by insulin therapy or hypoglycemic drugs. Hypoglycemic drugs usually contain compounds that can inhibit the action of α-glucosidase enzymes that play a role in breaking carbohydrates into blood sugar. Cinnamaldehyde has α-glucosidase inhibit activity because it has a functional group of alkene that is conjugated with a benzene ring and a carbonyl group. However, the use of this compound still provides unsatisfactory results due to its degradation during the absorption process. The solution offered to solve the problem is by encapsulated it within chitosan nanoparticles that serve to protect the bioactive compound from degradation, increases of solubility and delivery of a bioactive compound to the target site by using freeze-drying technique. The value of encapsulation efficiency (EE) of cinnamaldyhde which encapsulated within chitosan nanoparticles is about 74%. Inhibition test result showed that cinnamaldehyde-chitosan nanoparticles at 100 ppm could inhibit α-glucosidase activity in 23.9% with 134,13 in IC50. So it can be concluded that cinnamaldehyde can be encapsulated in nanoparticles of chitosan and proved that it could inhibit α-glucosidase.

  5. Process for encapsulating active agents in gels

    Yilmaz, G.; Jongboom, R.O.J.; Oosterhaven, J.

    2001-01-01

    The present invention relates to a process for encapsulating an active agent in a biopolymer in the form of a gel, comprising the steps of: a) forming a dispersion or solution of the biopolymer in water; and b) adding the active agent to the dispersion or solution obtained in step a); wherein the

  6. Treatment of Diabetes with Encapsulated Islets

    de Vos, Paul; Spasojevic, Milica; Faas, Marijke M.; Pedraz, JL; Orive, G

    2010-01-01

    Cell encapsulation has been proposed for the treatment of a wide variety of diseases since it allows for transplantation of cells in the absence of undesired immunosuppression. The technology has been proposed to be a solution for the treatment of diabetes since it potentially allows a mandatory

  7. Plastic Encapsulated Microcircuits (PEMs) Reliability Guide

    Sandor, M.

    2000-01-01

    It is reported by some users and has been demonstrated by others via testing and qualification that the quality and reliability of plastic-encapsulated microcircuits (PEMs) manufactured today are excellent in commercial applications and closely equivalent, and in some cases superior to their hemetic counterparts.

  8. Mixed Waste Salt Encapsulation Using Polysiloxane - Final Report

    Miller, C.M.; Loomis, G.G.; Prewett, S.W.

    1997-01-01

    A proof-of-concept experimental study was performed to investigate the use of Orbit Technologies polysiloxane grouting material for encapsulation of U.S. Department of Energy mixed waste salts leading to a final waste form for disposal. Evaporator pond salt residues and other salt-like material contaminated with both radioactive isotopes and hazardous components are ubiquitous in the DOE complex and may exceed 250,000,000 kg of material. Current treatment involves mixing low waste percentages (less than 10% by mass salt) with cement or costly thermal treatment followed by cementation to the ash residue. The proposed technology involves simple mixing of the granular salt material (with relatively high waste loadings-greater than 50%) in a polysiloxane-based system that polymerizes to form a silicon-based polymer material. This study involved a mixing study to determine optimum waste loadings and compressive strengths of the resultant monoliths. Following the mixing study, durability testing was performed on promising waste forms. Leaching studies including the accelerated leach test and the toxicity characteristic leaching procedure were also performed on a high nitrate salt waste form. In addition to this testing, the waste form was examined by scanning electron microscope. Preliminary cost estimates for applying this technology to the DOE complex mixed waste salt problem is also given

  9. Tissue response to silicone rubber when used as a root canal filling.

    Kasman, F G; Goldman, M

    1977-04-01

    To test the tissue compatibility of silicone rubber when it is used as a root canal filler, excess material was intentionally forced into the apical tissues in primates. The tissue response was one of general acceptance, with the usual response being fibrotic encapsulation. A low degree of inflammation was noted. Further studies are in progress.

  10. Buried oxide layer in silicon

    Sadana, Devendra Kumar; Holland, Orin Wayne

    2001-01-01

    A process for forming Silicon-On-Insulator is described incorporating the steps of ion implantation of oxygen into a silicon substrate at elevated temperature, ion implanting oxygen at a temperature below 200.degree. C. at a lower dose to form an amorphous silicon layer, and annealing steps to form a mixture of defective single crystal silicon and polycrystalline silicon or polycrystalline silicon alone and then silicon oxide from the amorphous silicon layer to form a continuous silicon oxide layer below the surface of the silicon substrate to provide an isolated superficial layer of silicon. The invention overcomes the problem of buried isolated islands of silicon oxide forming a discontinuous buried oxide layer.

  11. Epoxy encapsulant as serendipitous dosimeters during radiological/nuclear events

    Barkyoumb, J.H. [Carderock Division, Naval Surface Warfare Center, 9500 MacArthur Blvd., West Bethesda, MD 20817-5700 (United States)], E-mail: jhbarky@earthlink.net; Mathur, V.K. [Carderock Division, Naval Surface Warfare Center, 9500 MacArthur Blvd., West Bethesda, MD 20817-5700 (United States)

    2008-02-15

    The radiation response of a smart chip (embedded integrated circuit) module has been reported earlier using the technique of optically stimulated luminescence (OSL). It was found that a smart chip module could be used to evaluate the personnel exposure in the accident dosimetry range. Through subsequent experiments, the radiation sensitivity of the chip module was traced to the epoxy encapsulant provided to protect the chip from the environment and physical damage and that the radiation sensitivity of the epoxy is due to the silica used as the 'filler' for controlling the thixotropic properties of the epoxy used for 'glob top' or 'dam-and-fill' encapsulation. It is desirable to retain the ability to use the smart chip as an accident dosimeter without requiring a modification of standard manufacturing process for which an infrastructure already exists to avoid additional costs. For this reason, we have investigated commercially available filled and unfilled epoxies both as received from the manufacturer and compared their response with epoxies to which commercial fillers are added. In this work we investigate the OSL response of various epoxies commonly used for potting of electronic circuits with and without various filler materials for their potential to be used as a casualty dosimeter in the exposure range of 0.5-10 Gy.

  12. Dome shaped micro-laser encapsulated in a flexible film

    Ioppolo, T.; Manzo, M.

    2014-11-01

    In this paper, we demonstrated multimode laser emission from a dome shaped micro-scale resonator encapsulated in a flexible polymer film. The resonator with a radius of ~60 microns was made of Norland Blocking Adhesive (NBA 107) doped with a solution of rhodamine 6G and ethanol. The dome was encapsulated in a flexible polymeric film made of polydymethylsiloxane (PDMS) with a thickness of 1 mm. The micro-scale laser was optically pumped using a frequency doubled Q-switch Nd:YAG laser with pulse repetition of 10 Hz and pulse duration of 9 ns. Experiments were carried out to investigate the lasing properties of this laser structure. The pumping threshold for multimode laser emission was below 100 µJ cm-2. The average optical quality factor for all observed laser modes was of the order of 104. Using a fluence of 315.8 µJ cm-2 it was observed that the intensity of the laser emission dropped by 62% after 5 min of operation. These results showed that these solid state flexible lasers are easy to fabricate and can be integrated into novel flexible photonic devices and novel photonic sensors.

  13. Durability of incinerator ash waste encapsulated in modified sulfur cement

    Kalb, P.D.; Heiser, J.H. III; Pietrzak, R.; Colombo, P.

    1991-01-01

    Waste form stability under anticipated disposal conditions is an important consideration for ensuring continued isolation of contaminants from the accessible environment. Modified sulfur cement is a relatively new material and has only recently been applied as a binder for encapsulation of mixed wastes. Little data are available concerning its long-term durability. Therefore, a series of property evaluation tests for both binder and waste-binder combinations have been conducted to examine potential waste form performance under storage and disposal conditions. These tests include compressive strength, biodegradation, radiation stability, water immersion, thermal cycling, and leaching. Waste form compressive strength increased with ash waste loadings to 30.5 MPa at a maximum incinerator ash loading of 43 wt %. Biodegradation testing resulted in no visible microbial growth of either bacteria or fungi. Initial radiation stability testing did not reveal statistically significant deterioration in structural integrity. Results of 90 day water immersion tests were dependent on the type of ash tested. There were no statistically significant changes in compressive strength detected after completion of thermal cycle testing. Radionuclides from ash waste encapsulated in modified sulfur cement leached between 5 and 8 orders of magnitude slower than the leach index criterion established by the Nuclear Regulatory Commission (NRC) for low-level radioactive waste. Modified sulfur cement waste forms containing up to 43 wt % incinerator fly ash passed EPA Toxicity Characteristic Leaching Procedure (TCLP) criteria for lead and cadmium leachability. 11 refs., 2 figs., 5 tabs

  14. Dome shaped micro-laser encapsulated in a flexible film

    Ioppolo, T; Manzo, M

    2014-01-01

    In this paper, we demonstrated multimode laser emission from a dome shaped micro-scale resonator encapsulated in a flexible polymer film. The resonator with a radius of ∼60 microns was made of Norland Blocking Adhesive (NBA 107) doped with a solution of rhodamine 6G and ethanol. The dome was encapsulated in a flexible polymeric film made of polydymethylsiloxane (PDMS) with a thickness of 1 mm. The micro-scale laser was optically pumped using a frequency doubled Q-switch Nd:YAG laser with pulse repetition of 10 Hz and pulse duration of 9 ns. Experiments were carried out to investigate the lasing properties of this laser structure. The pumping threshold for multimode laser emission was below 100 µJ cm −2 . The average optical quality factor for all observed laser modes was of the order of 10 4 . Using a fluence of 315.8 µJ cm −2 it was observed that the intensity of the laser emission dropped by 62% after 5 min of operation. These results showed that these solid state flexible lasers are easy to fabricate and can be integrated into novel flexible photonic devices and novel photonic sensors. (paper)

  15. Monolithic integration of a silicon nanowire field-effect transistors array on a complementary metal-oxide semiconductor chip for biochemical sensor applications.

    Livi, Paolo; Kwiat, Moria; Shadmani, Amir; Pevzner, Alexander; Navarra, Giulio; Rothe, Jörg; Stettler, Alexander; Chen, Yihui; Patolsky, Fernando; Hierlemann, Andreas

    2015-10-06

    We present a monolithic complementary metal-oxide semiconductor (CMOS)-based sensor system comprising an array of silicon nanowire field-effect transistors (FETs) and the signal-conditioning circuitry on the same chip. The silicon nanowires were fabricated by chemical vapor deposition methods and then transferred to the CMOS chip, where Ti/Pd/Ti contacts had been patterned via e-beam lithography. The on-chip circuitry measures the current flowing through each nanowire FET upon applying a constant source-drain voltage. The analog signal is digitized on chip and then transmitted to a receiving unit. The system has been successfully fabricated and tested by acquiring I-V curves of the bare nanowire-based FETs. Furthermore, the sensing capabilities of the complete system have been demonstrated by recording current changes upon nanowire exposure to solutions of different pHs, as well as by detecting different concentrations of Troponin T biomarkers (cTnT) through antibody-functionalized nanowire FETs.

  16. Materials and integration schemes for above-IC integrated optics

    Schmitz, Jurriaan; Rangarajan, B.; Kovalgin, Alexeij Y.

    2014-01-01

    A study is presented on silicon oxynitride material for waveguides and germanium-silicon alloys for p-i-n diodes. The materials are manufactured at low, CMOS-backend compatible temperatures, targeting the integration of optical functions on top of CMOS chips. Low-temperature germanium-silicon

  17. Nonlinear optical interactions in silicon waveguides

    Kuyken B.

    2017-03-01

    Full Text Available The strong nonlinear response of silicon photonic nanowire waveguides allows for the integration of nonlinear optical functions on a chip. However, the detrimental nonlinear optical absorption in silicon at telecom wavelengths limits the efficiency of many such experiments. In this review, several approaches are proposed and demonstrated to overcome this fundamental issue. By using the proposed methods, we demonstrate amongst others supercontinuum generation, frequency comb generation, a parametric optical amplifier, and a parametric optical oscillator.

  18. Thin-film silicon solar cell technology

    Shah, A. V.; Schade, H.; Vaněček, Milan; Meier, J.; Vallat-Sauvain, E.; Wyrsch, N.; Kroll, U.; Droz, C.; Bailat, J.

    2004-01-01

    Roč. 12, - (2004), s. 113-142 ISSN 1062-7995 R&D Projects: GA MŽP SN/320/11/03 Institutional research plan: CEZ:AV0Z1010914 Keywords : thin-film silicon modules * hydrogenerated amorphous silicon(a-Si:H) * hydrogenerated microcrystalline (ćc-Si:H) * transparent conductive oxydes(TCOs) * building-integrated photovoltaics(BIPV) Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.196, year: 2004

  19. Acoustically excited encapsulated microbubbles and mitigation of biofouling

    Qamar, Adnan

    2017-08-31

    Provided herein is a universally applicable biofouling mitigation technology using acoustically excited encapsulated microbubbles that disrupt biofilm or biofilm formation. For example, a method of reducing biofilm formation or removing biofilm in a membrane filtration system is provided in which a feed solution comprising encapsulated microbubbles is provided to the membrane under conditions that allow the encapsulated microbubbles to embed in a biofilm. Sonication of the embedded, encapsulated microbubbles disrupts the biofilm. Thus, provided herein is a membrane filtration system for performing the methods and encapsulated microbubbles specifically selected for binding to extracellular polymeric substances (EFS) in a biofilm.

  20. Assembly procedure for the silicon pixel ladder for PHENIX silicon vertex tracker

    Onuki, Y.; Akiba, Y.; En'yo, H.; Fujiwara, K.; Haki, Y.; Hashimoto, K.; Ichimiya, R.; Kasai, M.; Kawashima, M.; Kurita, K.; Kurosawa, M.; Mannel, E.J.; Nakano, K.; Pak, R.; Sekimoto, M.; Sondheim, W.E.; Taketani, A.; Togawa, M.; Yamamoto, Y.

    2009-01-01

    The silicon vertex tracker (VTX) will be installed in the summer of 2010 to enhance the physics capabilities of the Pioneering High Energy Nuclear Interaction eXperiment (PHENIX) experiment at Brookhaven National Laboratory. The VTX consists of two types of silicon detectors: a pixel detector and a strip detector. The pixel detector consists of 30 pixel ladders placed on the two inner cylindrical layers of the VTX. The ladders are required to be assembled with high precision, however, they should be assembled in both cost and time efficient manner. We have developed an assembly bench for the ladder with several assembly fixtures and a quality assurance (Q/A) system using a 3D measurement machine. We have also developed an assembly procedure for the ladder, including a method for dispensing adhesive uniformly and encapsulation of bonding wires. The developed procedures were adopted in the assembly of the first pixel ladder and satisfy the requirements.