Optimization of electron beam crosslinking of wire and cable insulation

International Nuclear Information System (INIS)

Zimek, Z.; Przybytniak, G.; Nowicki, A.

2011-01-01

Complete text of publication follows. The computer simulations based on Monte Carlo method and the ModeCEB software program were carried out in connection with EB radiation set-up for crosslinking of electrical wire and cable insulation, located at the Center for Radiation Research and Technology of the Institute of Nuclear Chemistry and Technology. The theoretical predictions for absorbed dose distribution in irradiated electrical wire and cable insulation caused by scanned EB were compared to the experimental results of irradiation which were carried out in the experimental set-up based on ILU 6 electron accelerator, which is characterized by the following parameters: Electron energy 0.5-2.0 MeV; Average beam current 40-10 mA, pulse duration 400 μs; Width of scanning up to 80 cm; Scan frequency up to 50 Hz. The computer simulation of the dose distributions in two-sided irradiation system by a scanned electron beam in multilayer circular objects was performed for different process parameters; electrical wire and cable geometry (thickness of insulation layers and cupper wire diameter), type of polymer isolation, electron energy, energy spread, geometry of electron beam and electrical wire and cable distribution at irradiation zone. The geometry of electron beam distribution in irradiation zone was measured using TVA and PVC foil dosimeters for electron energy range available in ILU 6 accelerator. The temperature rise of irradiated electrical wire and irradiation homogeneity were evaluated for different experimental conditions to optimize process parameters. The obtained results of computer simulation were supported by experimental data of dose distribution based on gel-fraction measurements. Such agreement indicates that computer simulation ModeCEB is correct and sufficient for modelling of absorbed dose distribution in multi-layer circular objects irradiated with scanned electron beams. Acknowledgement: The R and D activities are supported by the European

Electron beam charging of insulators: A self-consistent flight-drift model

International Nuclear Information System (INIS)

Touzin, M.; Goeuriot, D.; Guerret-Piecourt, C.; Juve, D.; Treheux, D.; Fitting, H.-J.

2006-01-01

Electron beam irradiation and the self-consistent charge transport in bulk insulating samples are described by means of a new flight-drift model and an iterative computer simulation. Ballistic secondary electron and hole transport is followed by electron and hole drifts, their possible recombination and/or trapping in shallow and deep traps. The trap capture cross sections are the Poole-Frenkel-type temperature and field dependent. As a main result the spatial distributions of currents j(x,t), charges ρ(x,t), the field F(x,t), and the potential slope V(x,t) are obtained in a self-consistent procedure as well as the time-dependent secondary electron emission rate σ(t) and the surface potential V 0 (t). For bulk insulating samples the time-dependent distributions approach the final stationary state with j(x,t)=const=0 and σ=1. Especially for low electron beam energies E 0 G of a vacuum grid in front of the target surface. For high beam energies E 0 =10, 20, and 30 keV high negative surface potentials V 0 =-4, -14, and -24 kV are obtained, respectively. Besides open nonconductive samples also positive ion-covered samples and targets with a conducting and grounded layer (metal or carbon) on the surface have been considered as used in environmental scanning electron microscopy and common SEM in order to prevent charging. Indeed, the potential distributions V(x) are considerably small in magnitude and do not affect the incident electron beam neither by retarding field effects in front of the surface nor within the bulk insulating sample. Thus the spatial scattering and excitation distributions are almost not affected

Dynamic behavior of correlated electrons in the insulating doped semiconductor Si:P

Energy Technology Data Exchange (ETDEWEB)

Ritz, Elvira

2009-06-04

At low energy scales charge transport in the insulating Si:P is dominated by activated hopping between the localized donor electron states. Theoretical models for a disordered electronic system with a long-range Coulomb interaction are appropriate to interpret the electric conductivity spectra. With a novel and advanced method we perform broadband phase sensitive measurements of the reflection coefficient from 45 MHz up to 5 GHz, employing a vector network analyzer with a 2.4 mm coaxial sensor, which is terminated by the sample under test. While the material parameters (conductivity and permittivity) can be easily extracted from the obtained impedance data if the sample is metallic, no direct solution is possible if the material under investigation is an insulator. Focusing on doped semiconductors with largely varying conductivity and dielectric function, we present a closed calibration and evaluation procedure with an optimized theoretical and experimental complexity, based on the rigorous solution for the electromagnetic field inside the insulating sample, combined with the variational principle. Basically no limiting assumptions are necessary in a strictly defined parameter range. As an application of our new method, we have measured the complex broadband microwave conductivity of Si:P in a broad range of phosphorus concentration n/n{sub c} from 0.56 to 0.9 relative to the critical value n{sub c}=3.5 x 10{sup 18} cm{sup -3} of the metal-insulator transition driven by doping at temperatures down to 1.1 K, and studied unresolved issues of fundamental research concerning the electronic correlations and the metal-insulator transition. (orig.)

Electronic Structure Evolution across the Peierls Metal-Insulator Transition in a Correlated Ferromagnet

Directory of Open Access Journals (Sweden)

P. A. Bhobe

2015-10-01

Full Text Available Transition metal compounds often undergo spin-charge-orbital ordering due to strong electron-electron correlations. In contrast, low-dimensional materials can exhibit a Peierls transition arising from low-energy electron-phonon-coupling-induced structural instabilities. We study the electronic structure of the tunnel framework compound K_{2}Cr_{8}O_{16}, which exhibits a temperature-dependent (T-dependent paramagnetic-to-ferromagnetic-metal transition at T_{C}=180  K and transforms into a ferromagnetic insulator below T_{MI}=95  K. We observe clear T-dependent dynamic valence (charge fluctuations from above T_{C} to T_{MI}, which effectively get pinned to an average nominal valence of Cr^{+3.75} (Cr^{4+}∶Cr^{3+} states in a 3∶1 ratio in the ferromagnetic-insulating phase. High-resolution laser photoemission shows a T-dependent BCS-type energy gap, with 2G(0∼3.5(k_{B}T_{MI}∼35  meV. First-principles band-structure calculations, using the experimentally estimated on-site Coulomb energy of U∼4  eV, establish the necessity of strong correlations and finite structural distortions for driving the metal-insulator transition. In spite of the strong correlations, the nonintegral occupancy (2.25 d-electrons/Cr and the half-metallic ferromagnetism in the t_{2g} up-spin band favor a low-energy Peierls metal-insulator transition.

Helium ion beam induced electron emission from insulating silicon nitride films under charging conditions

Science.gov (United States)

Petrov, Yu. V.; Anikeva, A. E.; Vyvenko, O. F.

2018-06-01

Secondary electron emission from thin silicon nitride films of different thicknesses on silicon excited by helium ions with energies from 15 to 35 keV was investigated in the helium ion microscope. Secondary electron yield measured with Everhart-Thornley detector decreased with the irradiation time because of the charging of insulating films tending to zero or reaching a non-zero value for relatively thick or thin films, respectively. The finiteness of secondary electron yield value, which was found to be proportional to electronic energy losses of the helium ion in silicon substrate, can be explained by the electron emission excited from the substrate by the helium ions. The method of measurement of secondary electron energy distribution from insulators was suggested, and secondary electron energy distribution from silicon nitride was obtained.

Surface potential measurement of the insulator with secondary electron caused by negative ion implantation

International Nuclear Information System (INIS)

Tsuji, Hiroshi; Toyota, Yoshitaka; Nagumo, Syoji; Gotoh, Yasuhito; Ishikawa, Junzo; Sakai, Shigeki; Tanjyo, Masayasu; Matsuda, Kohji.

1994-01-01

Ion implantation has the merit of the good controllability of implantation profile and low temperature process, and has been utilized for the impurity introduction in LSI production. However, positive ion implantation is carried out for insulator or insulated conductor substrates, their charged potential rises, which is a serious problem. As the requirement for them advanced, charge compensation method is not the effective means for resolving it. The negative ion implantation in which charging is little was proposed. When the experiment on the negative ion implantation into insulated conductors was carried out, it was verified that negative ion implantation is effective as the implantation process without charging. The method of determining the charged potential of insulators at the time of negative ion implantation by paying attention to the energy distribution of the secondary electrons emitted from substrates at the time was devised. The energy analyzer for measuring the energy distribution of secondary electrons was made, and the measurement of the charged potential of insulators was carried out. The principle of the measurement, the measuring system and the experimental results are reported. (K.I.)

Local electron flow to the anode in a magnetically insulated diode

International Nuclear Information System (INIS)

Maron, Y.

1984-01-01

Local electron flux to the anode of a magnetically insulated diode is monitored. Intense electron burst to the anode and slow variations in the electron flux are observed. Unlike the slow signals the bursts are accompanied by sharp increases in microwave emission and by increases in the ion current density. The electron bursts are not affected by the presence of the anode plasma. Indications suggest that the bursts are initiated by processes in the cathode plasma

Development of a high power electron beam welding gun with replaceable high voltage feed-through insulators

Energy Technology Data Exchange (ETDEWEB)

Saha, T.K; Mascarenhas, M.; Kandaswamy, E., E-mail: tanmay@barc.gov.in [Power Beam Equipment Design Section, Bhabha Atomic Research Centre, Mumbai (India)

2014-07-01

Ceramic to metal sealed feed-through insulators are commonly used in electron beam welding gun. The above feed-through insulators are susceptible to failure, as the brazing joints in them are not always very strong. Failure in one of these feed-through could render the complete gun unusable. This problem has already been faced in BARC, which led to the development of the electron gun with replaceable feed through insulators. A 24 kW Electron Beam Welding (EBW) gun with indigenous designed replaceable insulators is fabricated in BARC. Emphasis during the design of the gun had been to reduce the use of imported components to zero. This paper describes the design and fabrication of this gun and reports various simulations and tests performed. Beam trajectory of the gun is numerically computed and presented. Weld passes were carried out on stainless steel plates show satisfactory penetrations. (author)

Electron drag in ferromagnetic structures separated by an insulating interface

Science.gov (United States)

Kozub, V. I.; Muradov, M. I.; Galperin, Y. M.

2018-06-01

We consider electron drag in a system of two ferromagnetic layers separated by an insulating interface. The source of it is expected to be magnon-electron interactions. Namely, we assume that the external voltage is applied to the "active" layer stimulating electric current through this layer. In its turn, the scattering of the current-carrying electrons by magnons leads to a magnon drag current within this layer. The 3-magnons interactions between magnons in the two layers (being of non-local nature) lead to magnon drag within the "passive" layer which, correspondingly, produce electron drag current via processes of magnon-electron scattering. We estimate the drag current and compare it to the phonon-induced one.

Magnetic insulation of secondary electrons in plasma source ion implantation

International Nuclear Information System (INIS)

Rej, D.J.; Wood, B.P.; Faehl, R.J.; Fleischmann, H.H.

1993-01-01

The uncontrolled loss of accelerated secondary electrons in plasma source ion implantation (PSII) can significantly reduce system efficiency and poses a potential x-ray hazard. This loss might be reduced by a magnetic field applied near the workpiece. The concept of magnetically-insulated PSII is proposed, in which secondary electrons are trapped to form a virtual cathode layer near the workpiece surface where the local electric field is essentially eliminated. Subsequent electrons that are emitted can then be reabsorbed by the workpiece. Estimates of anomalous electron transport from microinstabilities are made. Insight into the process is gained with multi-dimensional particle-in-cell simulations

Electronic structure of ferromagnet-insulator interfaces: Fe/MgO and Co/MgO

Energy Technology Data Exchange (ETDEWEB)

Mueller, M.

2007-07-11

In this thesis the electronic structure of Fe/MgO{sub x} and Co/MgO{sub x} ferromagnet-insulator interfaces, representing material systems which are widely used in magnetic tunnel junctions, is studied by means of spin- and angle-resolved photoemission spectroscopy. The photoemission studies focus particularly on the response of the ferromagnetic electronic system in contact with MgO of varying stoichiometries, as this reflects the mechanisms of metal-oxide bonding at real ferromagnet-insulator interfaces. The correlation between chemical bonding and electronic structure formation is analyzed by combining information from core- and valence-band photoemission spectroscopy. The spectral features are compared to band structure calculations, which are performed using the SPR-KKR method. The Fe/MgO and Co/MgO systems are prepared by molecular beam epitaxy under ultrahigh vacuum conditions on well-defined (4 x 6) GaAs(001) substrates. A structural analysis by means of low-energy electron diffraction (LEED) reveals their body-centered cubic crystalline structure, whereas the chemical characterization by Auger electron spectroscopy is used to quantify the chemical environment at the sample surfaces. The magnetic analysis, using the magneto-optical Kerr effect, reveals the uniaxial anisotropy of the ferromagnetic layers. A crucial parameter is given by the MgO degree of oxidation, which is addressed by means of core-level spectroscopy and quantified by suitable fitting procedures of the Mg 2p core level. The results of the photoemission experiments show, that the electronic structure of the Fe/MgO and Co/MgO ferromagnet/insulator interfaces and, consequently, the interfacial spin polarization are sensitively controlled by the interface chemistry. In particular, three distinct scenarios are identified: the nearly stoichiometric, the oxygen-deficient and the over-oxidized ferromagnet/MgO interface. Each case is defined by innate characteristics of the electronic structure at

Reduction of angular spread at nonadiabatic electron motion in magnetically insulated diode

Energy Technology Data Exchange (ETDEWEB)

Arzhannikov, A V; Sinitskij, S L [Institute of Nuclear Physics, Novosibirsk (Russian Federation)

1997-12-31

The behavior of the electron pitch-angle was investigated by analytical and numerical methods for the case of a magnetically insulated diode with a ribbon geometry. It is shown that at the boundary of the adiabaticity of the electron motion the angle can be multiply reduced by choice of a special inhomogeneity of the magnetic field. Analytic expressions for the final pitch-angle of the beam electrons are given. (author). 2 figs., 3 refs.

Synthesis of one-dimensional metal-containing insulated molecular wire with versatile properties directed toward molecular electronics materials.

Science.gov (United States)

Masai, Hiroshi; Terao, Jun; Seki, Shu; Nakashima, Shigeto; Kiguchi, Manabu; Okoshi, Kento; Fujihara, Tetsuaki; Tsuji, Yasushi

2014-02-05

We report, herein, the design, synthesis, and properties of new materials directed toward molecular electronics. A transition metal-containing insulated molecular wire was synthesized through the coordination polymerization of a Ru(II) porphyrin with an insulated bridging ligand of well-defined structure. The wire displayed not only high linearity and rigidity, but also high intramolecular charge mobility. Owing to the unique properties of the coordination bond, the interconversion between the monomer and polymer states was realized under a carbon monoxide atmosphere or UV irradiation. The results demonstrated a high potential of the metal-containing insulated molecular wire for applications in molecular electronics.

Limitation of the electron emission in an ion diode with magnetic self-insulation

International Nuclear Information System (INIS)

Pushkarev, A. I.; Isakova, Yu. I.; Guselnikov, V. I.

2011-01-01

The results of a study of the generation of a pulsed ion beam of gigawatt power formed by a diode with an explosive-emission potential electrode in a mode of magnetic self-insulation are presented. The studies were conducted at the TEMP-4M ion accelerator set in double pulse formation mode: the first pulse was negative (300-500 ns and 100-150 kV) and the second, positive (150 ns and 250-300 kV). The ion current density was 20-40 A/cm 2 ; the beam composition was protons and carbon ions. It was shown that plasma is effectively formed over the entire working surface of the graphite potential electrode. During the ion beam generation, a condition of magnetic cutoff of electrons along the entire length of the diode (B/B cr ≥ 4) is fulfilled. Because of the high drift rate, the residence time of the electrons and protons in the anode-cathode gap is 3-5 ns, while for the C + carbon ions, it is more than 8 ns. This denotes low efficiency of magnetic self-insulation in a diode of such a design. At the same time, it has been experimentally observed that, during the generation of ion current (second pulse), the electronic component of the total current is suppressed by a factor of 1.5-2 for a strip diode with plane and focusing geometry. A new model of the effect of limiting the electron emission explaining the decrease in the electronic component of the total current in a diode with magnetic self-insulation is proposed.

Electronic structure properties of UO2 as a Mott insulator

Science.gov (United States)

Sheykhi, Samira; Payami, Mahmoud

2018-06-01

In this work using the density functional theory (DFT), we have studied the structural, electronic and magnetic properties of uranium dioxide with antiferromagnetic 1k-, 2k-, and 3k-order structures. Ordinary approximations in DFT, such as the local density approximation (LDA) or generalized gradient approximation (GGA), usually predict incorrect metallic behaviors for this strongly correlated electron system. Using Hubbard term correction for f-electrons, LDA+U method, as well as using the screened Heyd-Scuseria-Ernzerhof (HSE) hybrid functional for the exchange-correlation (XC), we have obtained the correct ground-state behavior as an insulator, with band gaps in good agreement with experiment.

Topological insulators/superconductors: Potential future electronic materials

International Nuclear Information System (INIS)

Hor, Y. S.

2014-01-01

A new material called topological insulator has been discovered and becomes one of the fastest growing field in condensed matter physics. Topological insulator is a new quantum phase of matter which has Dirac-like conductivity on its surface, but bulk insulator through its interior. It is considered a challenging problem for the surface transport measurements because of dominant internal conductance due to imperfections of the existing crystals of topological insulators. By a proper method, the internal bulk conduction can be suppressed in a topological insulator, and permit the detection of the surface currents which is necessary for future fault-tolerant quantum computing applications. Doped topological insulators have depicted a large variety of bulk physical properties ranging from magnetic to superconducting behaviors. By chemical doping, a TI can change into a bulk superconductor. Nb x Bi 2 Se 3 is shown to be a superconductor with T c ∼ 3.2 K, which could be a potential candidate for a topological superconductor

Monolayer graphene-insulator-semiconductor emitter for large-area electron lithography

Science.gov (United States)

Kirley, Matthew P.; Aloui, Tanouir; Glass, Jeffrey T.

2017-06-01

The rapid adoption of nanotechnology in fields as varied as semiconductors, energy, and medicine requires the continual improvement of nanopatterning tools. Lithography is central to this evolving nanotechnology landscape, but current production systems are subject to high costs, low throughput, or low resolution. Herein, we present a solution to these problems with the use of monolayer graphene in a graphene-insulator-semiconductor (GIS) electron emitter device for large-area electron lithography. Our GIS device displayed high emission efficiency (up to 13%) and transferred large patterns (500 × 500 μm) with high fidelity (industries and opening opportunities in nanomanufacturing.

Device intended for measurement of induced trapped charge in insulating materials under electron irradiation in a scanning electron microscope

International Nuclear Information System (INIS)

Belkorissat, R; Benramdane, N; Jbara, O; Rondot, S; Hadjadj, A; Belhaj, M

2013-01-01

A device for simultaneously measuring two currents (i.e. leakage and displacement currents) induced in insulating materials under electron irradiation has been built. The device, suitably mounted on the sample holder of a scanning electron microscope (SEM), allows a wider investigation of charging and discharging phenomena that take place in any type of insulator during its electron irradiation and to determine accurately the corresponding time constants. The measurement of displacement current is based on the principle of the image charge due to the electrostatic influence phenomena. We are reporting the basic concept and test results of the device that we have built using, among others, the finite element method for its calibration. This last method takes into account the specimen chamber geometry, the geometry of the device and the physical properties of the sample. In order to show the possibilities of the designed device, various applications under different experimental conditions are explored. (paper)

Compton scattering of photons from electrons in magnetically insulated transmission lines

International Nuclear Information System (INIS)

Brower, K.L.; VanDevender, J.P.

1979-01-01

Self-magnetically insulated transmission lines are used for power transport between the vacuum insulator and the diode in high current particle accelerators. Since the efficiency of the power transport depends on the details of the initial line geometry, i.e., the injector, the dependence of the electron canonical momentum distribution on the injector geometry should reveal the loss mechanism. We propose to study that dependence experimentally through a Compton scattering diagnostic. The spectrum of scattered light reveals the electron velocity distribution perpendicular to the direction of flow. The design of the diagnostic is in progress. Our preliminary analysis is based on the conservation of energy and canonical momentum for a single electron in the anti E and anti B fields determined from 2-D calculations. For the Mite accelerator with power flow along Z, the normalized canonical momentum, μ, is in the range - 0.7 < μ less than or equal to 0. For anti k/sub i/ parallel to circumflex Y, and anti k/sub s/ circumflex X, our analysis indicates that the scattered photons have 1.1 eV less than or equal to h nu/sub s/ < 5.6 eV for ruby laser scattering and can be detected with PM tubes

Metallic Interface Emerging at Magnetic Domain Wall of Antiferromagnetic Insulator: Fate of Extinct Weyl Electrons

Directory of Open Access Journals (Sweden)

Youhei Yamaji

2014-05-01

Full Text Available Topological insulators, in contrast to ordinary semiconductors, accompany protected metallic surfaces described by Dirac-type fermions. Here, we theoretically show that another emergent two-dimensional metal embedded in the bulk insulator is realized at a magnetic domain wall. The domain wall has long been studied as an ingredient of both old-fashioned and leading-edge spintronics. The domain wall here, as an interface of seemingly trivial antiferromagnetic insulators, emergently realizes a functional interface preserved by zero modes with robust two-dimensional Fermi surfaces, where pyrochlore iridium oxides proposed to host the condensed-matter realization of Weyl fermions offer such examples at low temperatures. The existence of in-gap states that are pinned at domain walls, theoretically resembling spin or charge solitons in polyacetylene, and protected as the edges of hidden one-dimensional weak Chern insulators characterized by a zero-dimensional class-A topological invariant, solves experimental puzzles observed in R_{2}Ir_{2}O_{7} with rare-earth elements R. The domain wall realizes a novel quantum confinement of electrons and embosses a net uniform magnetization that enables magnetic control of electronic interface transports beyond the semiconductor paradigm.

A method to restrain the charging effect on an insulating substrate in high energy electron beam lithography

Science.gov (United States)

Mingyan, Yu; Shirui, Zhao; Yupeng, Jing; Yunbo, Shi; Baoqin, Chen

2014-12-01

Pattern distortions caused by the charging effect should be reduced while using the electron beam lithography process on an insulating substrate. We have developed a novel process by using the SX AR-PC 5000/90.1 solution as a spin-coated conductive layer, to help to fabricate nanoscale patterns of poly-methyl-methacrylate polymer resist on glass for phased array device application. This method can restrain the influence of the charging effect on the insulating substrate effectively. Experimental results show that the novel process can solve the problems of the distortion of resist patterns and electron beam main field stitching error, thus ensuring the accuracy of the stitching and overlay of the electron beam lithography system. The main characteristic of the novel process is that it is compatible to the multi-layer semiconductor process inside a clean room, and is a green process, quite simple, fast, and low cost. It can also provide a broad scope in the device development on insulating the substrate, such as high density biochips, flexible electronics and liquid crystal display screens.

Electronic Resource Management and Design

Science.gov (United States)

Abrams, Kimberly R.

2015-01-01

We have now reached a tipping point at which electronic resources comprise more than half of academic library budgets. Because of the increasing work associated with the ever-increasing number of e-resources, there is a trend to distribute work throughout the library even in the presence of an electronic resources department. In 2013, the author…

Absorbed Dose Distributions in Small Copper Wire Insulation due to Multiple-Sided Irradiations by 0.4 MeV Electrons

DEFF Research Database (Denmark)

Miller, Arne; McLaughlin, W. L.; Pedersen, Walther Batsberg

1979-01-01

When scanned electron beams are used to crosslink polymeric insulation of wire and cable, an important goal is to achieve optimum uniformity of absorbed dose distributions. Accurate measurements of dose distributions in a plastic dosimeter simulating a typical insulating material (polyethylene......) surrounding a copper wire core show that equal irradiations from as few as four sides give approximately isotropy and satisfactorily uniform energy depositions around the wire circumference. Electron beams of 0.4 MeV maximum energy were used to irradiate wires having a copper core of 1.0 mm dia....... and insulation thicknesses between 0.4 and 0.8 mm. The plastic dosimeter simulating polyethylene insulations was a thin radiochromic polyvinyl butyral film wrapped several times around the copper wire, such that when unwrapped and analyzed optically on a scanning microspectrophotometer, high-resolution radial...

Electronic structure and transport on the surface of topological insulator attached to an electromagnetic superlattice

International Nuclear Information System (INIS)

Wang Haiyan; Chen Xiongwen; Zhou Xiaoying; Zhang Lebo; Zhou Guanghui

2012-01-01

We study the electronic structure and transport for Dirac electron on the surface of a three-dimensional (3D) topological insulator attached to an electromagnetic superlattice. It is found that, by means of the transfer-matrix method, the number of electronic tunneling channels for magnetic barriers in antiparallel alignment is larger than that in parallel alignment, which stems to the energy band structures. Interestingly, a remarkable semiconducting transport behavior appears in this system with a strong magnetic barrier due to low energy band nearly paralleling to the Fermi level. Consequently, there is only small incident angle transport in the higher energy region when the system is modulated mainly by the higher electric barriers. We further find that the spatial distribution of the spin polarization oscillates periodically in the incoming region, but it is almost in-plane with a fixed direction in the transmitting region. The results may provide a further understanding of the nature of 3D TI surface states, and may be useful in the design of topological insulator-based electronic devices such as collimating electron beam.

Charging of insulators by multiply-charged-ion impact probed by slowing down of fast binary-encounter electrons

Science.gov (United States)

de Filippo, E.; Lanzanó, G.; Amorini, F.; Cardella, G.; Geraci, E.; Grassi, L.; La Guidara, E.; Lombardo, I.; Politi, G.; Rizzo, F.; Russotto, P.; Volant, C.; Hagmann, S.; Rothard, H.

2010-12-01

The interaction of ion beams with insulators leads to charging-up phenomena, which at present are under investigation in connection with guiding phenomena in nanocapillaries with possible application in nanofocused beams. We studied the charging dynamics of insulating foil targets [Mylar, polypropylene (PP)] irradiated with swift ion beams (C, O, Ag, and Xe at 40, 23, 40, and 30 MeV/u, respectively) via the measurement of the slowing down of fast binary-encounter electrons. Also, sandwich targets (Mylar covered with a thin Au layer on both surfaces) and Mylar with Au on only one surface were used. Fast-electron spectra were measured by the time-of-flight method at the superconducting cyclotron of Laboratori Nazionali del Sud (LNS) Catania. The charge buildup leads to target-material-dependent potentials of the order of 6.0 kV for Mylar and 2.8 kV for PP. The sandwich targets, surprisingly, show the same behavior as the insulating targets, whereas a single Au layer on the electron and ion exit side strongly suppresses the charging phenomenon. The accumulated number of projectiles needed for charging up is inversely proportional to electronic energy loss. Thus, the charging up is directly related to emission of secondary electrons.

Charging of insulators by multiply-charged-ion impact probed by slowing down of fast binary-encounter electrons

International Nuclear Information System (INIS)

De Filippo, E.; Lanzano, G.; Cardella, G.; Amorini, F.; Geraci, E.; Grassi, L.; Politi, G.; La Guidara, E.; Lombardo, I.; Rizzo, F.; Russotto, P.; Volant, C.; Hagmann, S.; Rothard, H.

2010-01-01

The interaction of ion beams with insulators leads to charging-up phenomena, which at present are under investigation in connection with guiding phenomena in nanocapillaries with possible application in nanofocused beams. We studied the charging dynamics of insulating foil targets [Mylar, polypropylene (PP)] irradiated with swift ion beams (C, O, Ag, and Xe at 40, 23, 40, and 30 MeV/u, respectively) via the measurement of the slowing down of fast binary-encounter electrons. Also, sandwich targets (Mylar covered with a thin Au layer on both surfaces) and Mylar with Au on only one surface were used. Fast-electron spectra were measured by the time-of-flight method at the superconducting cyclotron of Laboratori Nazionali del Sud (LNS) Catania. The charge buildup leads to target-material-dependent potentials of the order of 6.0 kV for Mylar and 2.8 kV for PP. The sandwich targets, surprisingly, show the same behavior as the insulating targets, whereas a single Au layer on the electron and ion exit side strongly suppresses the charging phenomenon. The accumulated number of projectiles needed for charging up is inversely proportional to electronic energy loss. Thus, the charging up is directly related to emission of secondary electrons.

Synthesis of ultrathin polymer insulating layers by initiated chemical vapour deposition for low-power soft electronics.

Science.gov (United States)

Moon, Hanul; Seong, Hyejeong; Shin, Woo Cheol; Park, Won-Tae; Kim, Mincheol; Lee, Seungwon; Bong, Jae Hoon; Noh, Yong-Young; Cho, Byung Jin; Yoo, Seunghyup; Im, Sung Gap

2015-06-01

Insulating layers based on oxides and nitrides provide high capacitance, low leakage, high breakdown field and resistance to electrical stresses when used in electronic devices based on rigid substrates. However, their typically high process temperatures and brittleness make it difficult to achieve similar performance in flexible or organic electronics. Here, we show that poly(1,3,5-trimethyl-1,3,5-trivinyl cyclotrisiloxane) (pV3D3) prepared via a one-step, solvent-free technique called initiated chemical vapour deposition (iCVD) is a versatile polymeric insulating layer that meets a wide range of requirements for next-generation electronic devices. Highly uniform and pure ultrathin films of pV3D3 with excellent insulating properties, a large energy gap (>8 eV), tunnelling-limited leakage characteristics and resistance to a tensile strain of up to 4% are demonstrated. The low process temperature, surface-growth character, and solvent-free nature of the iCVD process enable pV3D3 to be grown conformally on plastic substrates to yield flexible field-effect transistors as well as on a variety of channel layers, including organics, oxides, and graphene.

Size-dependent single electron transfer and semi-metal-to-insulator transitions in molecular metal oxide electronics

Science.gov (United States)

Balliou, Angelika; Bouroushian, Mirtat; Douvas, Antonios M.; Skoulatakis, George; Kennou, Stella; Glezos, Nikos

2018-07-01

All-inorganic self-arranged molecular transition metal oxide hyperstructures based on polyoxometalate molecules (POMs) are fabricated and tested as electronically tunable components in emerging electronic devices. POM hyperstructures reveal great potential as charging nodes of tunable charging level for molecular memories and as enhancers of interfacial electron/hole injection for photovoltaic stacks. STM, UPS, UV–vis spectroscopy and AFM measurements show that this functionality stems from the films’ ability to structurally tune their HOMO–LUMO levels and electron localization length at room temperature. By adapting POM nanocluster size in solution, self-doping and current modulation of four orders of magnitude is monitored on a single nanocluster on SiO2 at voltages as low as 3 Volt. Structurally driven insulator-to-semi-metal transitions and size-dependent current regulation through single electron tunneling are demonstrated and examined with respect to the stereochemical and electronic structure of the molecular entities. This extends the value of self-assembly as a tool for correlation length and electronic properties tuning and demonstrate POM hyperstructures’ plausibility for on-chip molecular electronics operative at room temperature.

Size-dependent single electron transfer and semi-metal-to-insulator transitions in molecular metal oxide electronics.

Science.gov (United States)

Balliou, Angelika; Bouroushian, Mirtat; Douvas, Antonios M; Skoulatakis, George; Kennou, Stella; Glezos, Nikos

2018-07-06

All-inorganic self-arranged molecular transition metal oxide hyperstructures based on polyoxometalate molecules (POMs) are fabricated and tested as electronically tunable components in emerging electronic devices. POM hyperstructures reveal great potential as charging nodes of tunable charging level for molecular memories and as enhancers of interfacial electron/hole injection for photovoltaic stacks. STM, UPS, UV-vis spectroscopy and AFM measurements show that this functionality stems from the films' ability to structurally tune their HOMO-LUMO levels and electron localization length at room temperature. By adapting POM nanocluster size in solution, self-doping and current modulation of four orders of magnitude is monitored on a single nanocluster on SiO 2 at voltages as low as 3 Volt. Structurally driven insulator-to-semi-metal transitions and size-dependent current regulation through single electron tunneling are demonstrated and examined with respect to the stereochemical and electronic structure of the molecular entities. This extends the value of self-assembly as a tool for correlation length and electronic properties tuning and demonstrate POM hyperstructures' plausibility for on-chip molecular electronics operative at room temperature.

Local structural distortion and electronic modifications in PrNiO3 across the metal-insulator transition

International Nuclear Information System (INIS)

Piamonteze, C.; Tolentino, H.C.N.; Ramos, A.Y.; Massa, N. E.; Alonso, J.A.; Martinez-Lope, M.J.; Casais, M.T.

2003-01-01

Local electronic and structural properties of PrNiO3 perovskite were studied by means of X-ray Absorption Spectroscopy at Ni K and L edges. The EXAFS results at Ni K edge show a structural transition from three different Ni-O bond-lengths at the insulating phase to two Ni-O bond-lengths above TMI. These results were interpreted as being due to a transition from a structure with two different Ni sites at the insulating phase to one distorted Ni site at the metallic phase. The Ni L edge spectra show a remarkable difference between the spectra measured at the insulating and metallic phases that indicates a decreasing degree of hybridization between Ni3d and O2p bands from the metallic to the insulating phase

Incipient 2D Mott insulators in extreme high electron density, ultra-thin GdTiO3/SrTiO3/GdTiO3 quantum wells

Science.gov (United States)

Allen, S. James; Ouellette, Daniel G.; Moetakef, Pouya; Cain, Tyler; Chen, Ru; Balents, Leon; Stemmer, Susanne

2013-03-01

By reducing the number of SrO planes in a GdTiO3 /SrTiO3/ GdTiO3 quantum well heterostructure, an electron gas with ~ fixed 2D electron density can be driven close to the Mott metal insulator transition - a quantum critical point at ~1 electron per unit cell. A single interface between the Mott insulator GdTiO3 and band insulator SrTiO3 has been shown to introduce ~ 1/2 electron per interface unit cell. Two interfaces produce a quantum well with ~ 7 1014 cm-2 electrons: at the limit of a single SrO layer it may produce a 2D magnetic Mott insulator. We use temperature and frequency dependent (DC - 3eV) conductivity and temperature dependent magneto-transport to understand the relative importance of electron-electron interactions, electron-phonon interactions, and surface roughness scattering as the electron gas is compressed toward the quantum critical point. Terahertz time-domain and FTIR spectroscopies, measure the frequency dependent carrier mass and scattering rate, and the mid-IR polaron absorption as a function of quantum well thickness. At the extreme limit of a single SrO plane, we observe insulating behavior with an optical gap substantially less than that of the surrounding GdTiO3, suggesting a novel 2D Mott insulator. MURI program of the Army Research Office - Grant No. W911-NF-09-1-0398

Electronic transport in bismuth selenide in the topological insulator regime

Science.gov (United States)

Kim, Dohun

The 3D topological insulators (TIs) have an insulating bulk but spin-momentum coupled metallic surface states stemming from band inversion due to strong spin-orbit interaction, whose existence is guaranteed by the topology of the band structure of the insulator. While the STI surface state has been studied spectroscopically by e.g. photoemission and scanned probes, transport experiments have failed to demonstrate clear signature of the STI due to high level of bulk conduction. In this thesis, I present experimental results on the transport properties of TI material Bi2Se3 in the absence of bulk conduction (TI regime), achieved by applying novel p-type doping methods. Field effect transistors consisting of thin (thickness: 5-17 nm) Bi2Se3 are fabricated by mechanical exfoliation of single crystals, and a combination of conventional dielectric (300 nm thick SiO2) and electrochemical or chemical gating methods are used to move the Fermi energy through the surface Dirac point inside bulk band gap, revealing the ambipolar gapless nature of transport in the Bi2Se3 surface states. The minimum conductivity of the topological surface state is understood within the self-consistent theory of Dirac electrons in the presence of charged impurities. The intrinsic finite-temperature resistivity of the topological surface state due to electron-acoustic phonon scattering is measured to be 60 times larger than that of graphene largely due to the smaller Fermi and sound velocities in Bi2Se 3, which will have implications for topological electronic devices operating at room temperature. Along with semi-classical Boltzmann transport, I also discuss 2D weak anti-localization (WAL) behavior of the topological surface states. By investigating gate-tuned WAL behavior in thin (5-17 nm) TI films, I show that WAL in the TI regime is extraordinarily sensitive to the hybridization induced quantum mechanical tunneling between top and bottom topological surfaces, and interplay of phase coherence

Spin current in an electron waveguide tunnel-coupled to a topological insulator

International Nuclear Information System (INIS)

Sukhanov, Aleksei A; Sablikov, Vladimir A

2012-01-01

We show that electron tunneling from edge states in a two-dimensional topological insulator into a parallel electron waveguide leads to the appearance of spin-polarized current in the waveguide. The spin polarization P can be very close to unity and the electron current passing through the tunnel contact splits in the waveguide into two branches flowing from the contact. The polarization essentially depends on the electron scattering by the contact and the electron-electron interaction in the one-dimensional edge states. The electron-electron interaction is treated within the Luttinger liquid model. The main effect of the interaction stems from the renormalization of the electron velocity, due to which the polarization increases with the interaction strength. Electron scattering by the contact leads to a decrease in P. A specific effect occurs when the bottom of the subbands in the waveguide crosses the Dirac point of the spectrum of edge states when changing the voltage or chemical potential. This leads to changing the direction of the spin current.

Secondary emission ion analyzer provided with an electron gun for insulating material analysis

International Nuclear Information System (INIS)

Blanchard, Bruno; Carrier, Patrick; Marguerite, J.-L.; Rocco, J.-C.

1976-01-01

This invention relates to a secondary emission ion analyser, fitted with an electron gun. It is used in the mass spectrometry analysis of electrically insulating bodies. It has already been suggested to bombard the target with an electron beam in conjunction with the beam of primary particles, in order to reduce the space charge near the target. The object of this invention is the application of this known process to appliances of the ion analyser type with a high electric field near the target. Its main characteristic is the use of an electron gun emitting an electron beam through the extraction lens placed opposite the target. The extraction electric field influences the path of the electrons but the electric and mechanical specifications of the electron gun in the invention are such that the target is correctly sprayed by the electron beam [fr

Magnetically insulated transmission line used for relativistic electron beam injection into SPAC-VI

International Nuclear Information System (INIS)

Tsuzuki, Tetsuya; Narihara, Kazumichi; Tomita, Yukihiro; Mohri, Akihiro.

1980-10-01

For the purpose to inject the electron beam with energy of about 1.5 MeV and current of about 100 kA into the SPAC-6 (torus device), a magnetically insulated transmission line was designed and constructed. The motion of electrons in the line was theoretically analyzed. The requirements for the design of the transmission line were as follows-: (a) condition of magnetic insulation, (b) suppression against reverse gas flow from the beam source to the torus, (c) care to minimize the influence of strong torus magnetic field, (d) reduction of inductance and (e) safety engineering measures, e.g., separation valve in the MITL between the beam source and the SPAC-6. The transmission line of 2.4 m long was designed and constructed. The wave forms of electric potential and current were measured. The transmission efficiency of current along the axis and the efficiency as a function of current at the end of the line were also measured. The reason of the loss of current is discussed. (J.P.N.)

Electron Band Alignment at Interfaces of Semiconductors with Insulating Oxides: An Internal Photoemission Study

Directory of Open Access Journals (Sweden)

Valeri V. Afanas'ev

2014-01-01

Full Text Available Evolution of the electron energy band alignment at interfaces between different semiconductors and wide-gap oxide insulators is examined using the internal photoemission spectroscopy, which is based on observations of optically-induced electron (or hole transitions across the semiconductor/insulator barrier. Interfaces of various semiconductors ranging from the conventional silicon to the high-mobility Ge-based (Ge, Si1-xGex, Ge1-xSnx and AIIIBV group (GaAs, InxGa1-xAs, InAs, GaP, InP, GaSb, InSb materials were studied revealing several general trends in the evolution of band offsets. It is found that in the oxides of metals with cation radii larger than ≈0.7 Å, the oxide valence band top remains nearly at the same energy (±0.2 eV irrespective of the cation sort. Using this result, it becomes possible to predict the interface band alignment between oxides and semiconductors as well as between dissimilar insulating oxides on the basis of the oxide bandgap width which are also affected by crystallization. By contrast, oxides of light elements, for example, Be, Mg, Al, Si, and Sc exhibit significant shifts of the valence band top. General trends in band lineup variations caused by a change in the composition of semiconductor photoemission material are also revealed.

Simulation of electron and ion bipolar flow in high current diode with magnetic insulation

International Nuclear Information System (INIS)

Vrba, P.; Engelko, V.I.

1990-08-01

Numerical simulation of the formation of the collector ion flow in a magnetically insulated ion diode (MID) with a hollow cylindrical and cone-shaped cathode was studied. Such cathodes are often used for the production of tubular high current microsecond electron beams. The ions, emitted by the collector and born as a result of ionization of the residual gas by the electron beam, are focused into the cathode plasma region. This effect can adversely influence the diode operation

Secondary electron emission and self-consistent charge transport in semi-insulating samples

Energy Technology Data Exchange (ETDEWEB)

Fitting, H.-J. [Institute of Physics, University of Rostock, Universitaetsplatz 3, D-18051 Rostock (Germany); Touzin, M. [Unite Materiaux et Transformations, UMR CNRS 8207, Universite de Lille 1, F-59655 Villeneuve d' Ascq (France)

2011-08-15

Electron beam induced self-consistent charge transport and secondary electron emission (SEE) in insulators are described by means of an electron-hole flight-drift model (FDM) now extended by a certain intrinsic conductivity (c) and are implemented by an iterative computer simulation. Ballistic secondary electrons (SE) and holes, their attenuation to drifting charge carriers, and their recombination, trapping, and field- and temperature-dependent detrapping are included. As a main result the time dependent ''true'' secondary electron emission rate {delta}(t) released from the target material and based on ballistic electrons and the spatial distributions of currents j(x,t), charges {rho}(x,t), field F(x,t), and potential V(x,t) are obtained where V{sub 0} = V(0,t) presents the surface potential. The intrinsic electronic conductivity limits the charging process and leads to a conduction sample current to the support. In that case the steady-state total SE yield will be fixed below the unit: i.e., {sigma} {eta} + {delta} < 1.

c -Axis Dimer and Its Electronic Breakup: The Insulator-to-Metal Transition in Ti2 O3

Science.gov (United States)

Chang, C. F.; Koethe, T. C.; Hu, Z.; Weinen, J.; Agrestini, S.; Zhao, L.; Gegner, J.; Ott, H.; Panaccione, G.; Wu, Hua; Haverkort, M. W.; Roth, H.; Komarek, A. C.; Offi, F.; Monaco, G.; Liao, Y.-F.; Tsuei, K.-D.; Lin, H.-J.; Chen, C. T.; Tanaka, A.; Tjeng, L. H.

2018-04-01

We report on our investigation of the electronic structure of Ti2 O3 using (hard) x-ray photoelectron and soft x-ray absorption spectroscopy. From the distinct satellite structures in the spectra, we have been able to establish unambiguously that the Ti-Ti c -axis dimer in the corundum crystal structure is electronically present and forms an a1 ga1 g molecular singlet in the low-temperature insulating phase. Upon heating, we observe a considerable spectral weight transfer to lower energies with orbital reconstruction. The insulator-metal transition may be viewed as a transition from a solid of isolated Ti-Ti molecules into a solid of electronically partially broken dimers, where the Ti ions acquire additional hopping in the a -b plane via the egπ channel, the opening of which requires consideration of the multiplet structure of the on-site Coulomb interaction.

Suppression of discharge breakdown of polyethylene insulation during electron beam irradiation to power cable

International Nuclear Information System (INIS)

Sasaki, T.; Hosoi, F.; Kasai, N.; Hagiwara, M.

1981-01-01

In an attempt to apply the electron beam process to the crosslinking procedure for polyethylene insulation of high tension power cables, the suppression of discharge breakdown during irradiation has been investigated in the presence of crosslinking agents. Alkylamines of strong basicity and secondary or tertiary alcoholamines were found to be effective additives to suppress the discharge breakdown. The retardation of crosslinking by amines was minimized by reducing the amount of an amine and adding an alcohol instead. Polyethylene compounds contaning crosslinking agents, amines and alcohols which gave properties suitable for insulating a cable were obtained. The feasibility of these results are ascertained by irradiating cable specimens of a 22 kV class. (author)

Surface conduction of topological Dirac electrons in bulk insulating Bi2Se3

Science.gov (United States)

Fuhrer, Michael

2013-03-01

The three dimensional strong topological insulator (STI) is a new phase of electronic matter which is distinct from ordinary insulators in that it supports on its surface a conducting two-dimensional surface state whose existence is guaranteed by topology. I will discuss experiments on the STI material Bi2Se3, which has a bulk bandgap of 300 meV, much greater than room temperature, and a single topological surface state with a massless Dirac dispersion. Field effect transistors consisting of thin (3-20 nm) Bi2Se3 are fabricated from mechanically exfoliated from single crystals, and electrochemical and/or chemical gating methods are used to move the Fermi energy into the bulk bandgap, revealing the ambipolar gapless nature of transport in the Bi2Se3 surface states. The minimum conductivity of the topological surface state is understood within the self-consistent theory of Dirac electrons in the presence of charged impurities. The intrinsic finite-temperature resistivity of the topological surface state due to electron-acoustic phonon scattering is measured to be ~60 times larger than that of graphene largely due to the smaller Fermi and sound velocities in Bi2Se3, which will have implications for topological electronic devices operating at room temperature. As samples are made thinner, coherent coupling of the top and bottom topological surfaces is observed through the magnitude of the weak anti-localization correction to the conductivity, and, in the thinnest Bi2Se3 samples (~ 3 nm), in thermally-activated conductivity reflecting the opening of a bandgap.

Electronic Resource Management Systems

Directory of Open Access Journals (Sweden)

Mark Ellingsen

2004-10-01

Full Text Available Computer applications which deal with electronic resource management (ERM are quite a recent development. They have grown out of the need to manage the burgeoning number of electronic resources particularly electronic journals. Typically, in the early years of e-journal acquisition, library staff provided an easy means of accessing these journals by providing an alphabetical list on a web page. Some went as far as categorising the e-journals by subject and then grouping the journals either on a single web page or by using multiple pages. It didn't take long before it was recognised that it would be more efficient to dynamically generate the pages from a database rather than to continually edit the pages manually. Of course, once the descriptive metadata for an electronic journal was held within a database the next logical step was to provide administrative forms whereby that metadata could be manipulated. This in turn led to demands for incorporating more information and more functionality into the developing application.

On a possibility of creation of positive space charge cloud in a system with magnetic insulation of electrons

International Nuclear Information System (INIS)

Goncharov, A.A.; Dobrovol'skii, A.M.; Dunets, S.P.; Evsyukov, A.N.; Protsenko, I.M.

2009-01-01

We describe a new approach for creation an effective, low-cost, low-maintenance axially symmetric plasma optical tools for focusing and manipulating high-current beams of negatively charged particles, electrons and negative ions. This approach is based on fundamental plasma optical concept of magnetic insulation of electrons and non-magnetized positive ions providing creation of controlled uncompensated cloud of the space charge. The axially symmetric electrostatic plasma optical lens is well-known and well developed tool where this concept is used successfully. This provides control and focusing high-current positive ion beams in wide range of parameters. Here for the first time we present optimistic experimental results describing the application of an idea of magnetic insulation of electrons for generation of the stable cloud of positive space charge by focusing onto axis the converging stream of heavy ions produced by circular accelerator with closed electron drift. The estimations of a maximal concentration of uncompensated cloud of positive ions are also made

Electronic Resources Management Project Presentation 2012

KAUST Repository

Ramli, Rindra M.

2012-11-05

This presentation describes the electronic resources management project undertaken by the KAUST library. The objectives of this project is to migrate information from MS Sharepoint to Millennium ERM module. One of the advantages of this migration is to consolidate all electronic resources into a single and centralized location. This would allow for better information sharing among library staff.

PRINCIPLES OF CONTENT FORMATION EDUCATIONAL ELECTRONIC RESOURCE

Directory of Open Access Journals (Sweden)

О Ю Заславская

2017-12-01

Full Text Available The article considers modern possibilities of information and communication technologies for the design of electronic educational resources. The conceptual basis of the open educational multimedia system is based on the modular architecture of the electronic educational resource. The content of the electronic training module can be implemented in several versions of the modules: obtaining information, practical exercises, control. The regularities in the teaching process in modern pedagogical theory are considered: general and specific, and the principles for the formation of the content of instruction at different levels are defined, based on the formulated regularities. On the basis of the analysis, the principles of the formation of the electronic educational resource are determined, taking into account the general and didactic patterns of teaching.As principles of the formation of educational material for obtaining information for the electronic educational resource, the article considers: the principle of methodological orientation, the principle of general scientific orientation, the principle of systemic nature, the principle of fundamentalization, the principle of accounting intersubject communications, the principle of minimization. The principles of the formation of the electronic training module of practical studies in the article include: the principle of systematic and dose based consistency, the principle of rational use of study time, the principle of accessibility. The principles of the formation of the module for monitoring the electronic educational resource can be: the principle of the operationalization of goals, the principle of unified identification diagnosis.

Implementing CORAL: An Electronic Resource Management System

Science.gov (United States)

Whitfield, Sharon

2011-01-01

A 2010 electronic resource management survey conducted by Maria Collins of North Carolina State University and Jill E. Grogg of University of Alabama Libraries found that the top six electronic resources management priorities included workflow management, communications management, license management, statistics management, administrative…

Intense-proton-beam transport through an insulator beam guide

International Nuclear Information System (INIS)

Hanamori, Susumu; Kawata, Shigeo; Kikuchi, Takashi; Fujita, Akira; Chiba, Yasunobu; Hikita, Taisuke; Kato, Shigeru

1998-01-01

In this paper we study intense-proton-beam transport through an insulator guide. In our previous papers (Jpn. J. Appl. Phys. 34 (1995) L520, Jpn. J. Appl. Phys. 35 (1996) L1127) we proposed a new system for intense-electron-beam transport using an insulator guide. In contrast to the electron beam, an intense-proton beam tends to generate a virtual anode, because of the large proton mass. The virtual anode formation at the initial stage is prevented by prefilled plasma in this system. During and after this, electrons are extracted from the plasma generated at the insulator surface by the proton beam space charge and expand over the transport area. The proton beam charge is effectively neutralized by the electrons. Consequently, the proton beam propagates efficiently through the insulator beam guide. The electron extraction is self-regulated by the net space charge of the proton beam. (author)

Managing electronic resources a LITA guide

CERN Document Server

Weir, Ryan O

2012-01-01

Informative, useful, current, Managing Electronic Resources: A LITA Guide shows how to successfully manage time, resources, and relationships with vendors and staff to ensure personal, professional, and institutional success.

Metal-insulator transitions

Science.gov (United States)

Imada, Masatoshi; Fujimori, Atsushi; Tokura, Yoshinori

1998-10-01

Metal-insulator transitions are accompanied by huge resistivity changes, even over tens of orders of magnitude, and are widely observed in condensed-matter systems. This article presents the observations and current understanding of the metal-insulator transition with a pedagogical introduction to the subject. Especially important are the transitions driven by correlation effects associated with the electron-electron interaction. The insulating phase caused by the correlation effects is categorized as the Mott Insulator. Near the transition point the metallic state shows fluctuations and orderings in the spin, charge, and orbital degrees of freedom. The properties of these metals are frequently quite different from those of ordinary metals, as measured by transport, optical, and magnetic probes. The review first describes theoretical approaches to the unusual metallic states and to the metal-insulator transition. The Fermi-liquid theory treats the correlations that can be adiabatically connected with the noninteracting picture. Strong-coupling models that do not require Fermi-liquid behavior have also been developed. Much work has also been done on the scaling theory of the transition. A central issue for this review is the evaluation of these approaches in simple theoretical systems such as the Hubbard model and t-J models. Another key issue is strong competition among various orderings as in the interplay of spin and orbital fluctuations. Experimentally, the unusual properties of the metallic state near the insulating transition have been most extensively studied in d-electron systems. In particular, there is revived interest in transition-metal oxides, motivated by the epoch-making findings of high-temperature superconductivity in cuprates and colossal magnetoresistance in manganites. The article reviews the rich phenomena of anomalous metallicity, taking as examples Ti, V, Cr, Mn, Fe, Co, Ni, Cu, and Ru compounds. The diverse phenomena include strong spin and

Topological insulators fundamentals and perspectives

CERN Document Server

Ortmann, Frank; Valenzuela, Sergio O

2015-01-01

There are only few discoveries and new technologies in physical sciences that have the potential to dramatically alter and revolutionize our electronic world. Topological insulators are one of them. The present book for the first time provides a full overview and in-depth knowledge about this hot topic in materials science and condensed matter physics. Techniques such as angle-resolved photoemission spectrometry (ARPES), advanced solid-state Nuclear Magnetic Resonance (NMR) or scanning-tunnel microscopy (STM) together with key principles of topological insulators such as spin-locked electronic

Cooper Pairs in Insulators?

International Nuclear Information System (INIS)

Valles, James

2008-01-01

Nearly 50 years elapsed between the discovery of superconductivity and the emergence of the microscopic theory describing this zero resistance state. The explanation required a novel phase of matter in which conduction electrons joined in weakly bound pairs and condensed with other pairs into a single quantum state. Surprisingly, this Cooper pair formation has also been invoked to account for recently uncovered high-resistance or insulating phases of matter. To address this possibility, we have used nanotechnology to create an insulating system that we can probe directly for Cooper pairs. I will present the evidence that Cooper pairs exist and dominate the electrical transport in these insulators and I will discuss how these findings provide new insight into superconductor to insulator quantum phase transitions.

School Building Design and Audio-Visual Resources.

Science.gov (United States)

National Committee for Audio-Visual Aids in Education, London (England).

The design of new schools should facilitate the use of audiovisual resources by ensuring that the materials used in the construction of the buildings provide adequate sound insulation and acoustical and viewing conditions in all learning spaces. The facilities to be considered are: electrical services; electronic services; light control and…

Bonded stacked-ring insulator for the Antares electron gun

International Nuclear Information System (INIS)

Stine, R.D.; Allen, G.R.; Eaton, E.; Weinstein, B.

1982-01-01

A large diameter insulator utilizing epoxy bonding which has sufficient mechanical strength to support the 3000 kg cathode/grid assembly was developed. Bonding the insulator simplifies the handling and reduces the number of 0-ring seals to a minimum. We have described the material selection, bonding techniques and electrical design approach

First principles description of the insulator-metal transition in europium monoxide

KAUST Repository

Wang, Hao

2012-02-01

Europium monoxide, EuO, is a ferromagnetic insulator. Its electronic structure under pressure and doping is investigated by means of density functional theory. We employ spin polarized electronic structure calculations including onsite electron-electron interaction for the localized Eu 4f and 5d electrons. Our results show that under pressure the ferromagnetism is stable, both for hydrostatic and uniaxial pressure, while the compound undergoes an insulator-metal transition. The insulator-metal transition in O deficient and Gd doped EuO is reproduced for an impurity concentration of 6.25%. A 10 monolayer thick EuO(1 0 0) thin film is predicted to be an insulator with a narrow band gap of 0.08 eV. © 2011 Elsevier B.V. All rights reserved.

Electronic phase separation in insulating (Ga, Mn) As with low compensation: super-paramagnetism and hopping conduction

Science.gov (United States)

Yuan, Ye; Wang, Mao; Xu, Chi; Hübner, René; Böttger, Roman; Jakiela, Rafal; Helm, Manfred; Sawicki, Maciej; Zhou, Shengqiang

2018-03-01

In the present work, low compensated insulating (Ga,Mn)As with 0.7% Mn is obtained by ion implantation combined with pulsed laser melting. The sample shows variable-range hopping transport behavior with a Coulomb gap in the vicinity of the Fermi energy, and the activation energy is reduced by an external magnetic field. A blocking super-paramagnetism is observed rather than ferromagnetism. Below the blocking temperature, the sample exhibits a colossal negative magnetoresistance. Our studies confirm that the disorder-induced electronic phase separation occurs in (Ga,Mn)As samples with a Mn concentration in the insulator-metal transition regime, and it can account for the observed superparamagnetism and the colossal magnetoresistance.

Improvements in the reliability of a-InGaZnO thin-film transistors with triple stacked gate insulator in flexible electronics applications

Energy Technology Data Exchange (ETDEWEB)

Chen, Hua-Mao [Department of Photonics & Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu, Taiwan (China); Chang, Ting-Chang, E-mail: tcchang3708@gmail.com [Department of Physics, National Sun Yat-Sen University, Kaohsiung, Taiwan (China); Department of Photonics, National Sun Yat-Sen University, Kaohsiung, Taiwan (China); Advanced Optoelectronics Technology Center, National Cheng Kung University, Taiwan (China); Tai, Ya-Hsiang [Department of Photonics & Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu, Taiwan (China); Chen, Kuan-Fu [Department of Physics, National Sun Yat-Sen University, Kaohsiung, Taiwan (China); Chiang, Hsiao-Cheng [Department of Photonics, National Sun Yat-Sen University, Kaohsiung, Taiwan (China); Liu, Kuan-Hsien [Department of Electrophysics, National Chiao Tung University, Hsinchu, Taiwan (China); Lee, Chao-Kuei [Department of Photonics, National Sun Yat-Sen University, Kaohsiung, Taiwan (China); Lin, Wei-Ting; Cheng, Chun-Cheng; Tu, Chun-Hao; Liu, Chu-Yu [Advanced Technology Research Center, AU Optronics Corp, Hsinchu, Taiwan (China)

2015-11-30

This study examined the impact of the low-temperature stacking gate insulator on the gate bias instability of a-InGaZnO thin film transistors in flexible electronics applications. Although the quality of SiN{sub x} at low process/deposition temperature is better than that of SiO{sub x} at similarly low process/deposition temperature, there is still a very large positive threshold voltage (V{sub th}) shift of 9.4 V for devices with a single low-temperature SiN{sub x} gate insulator under positive gate bias stress. However, a suitable oxide–nitride–oxide-stacked gate insulator exhibits a V{sub th} shift of only 0.23 V. This improvement results from the larger band offset and suitable gate insulator thickness that can effectively suppress carrier trapping behavior. - Highlights: • The cause of the bias instability for a low-temperature gate insulator is verified. • A triple-stacked gate insulator was fabricated. • A suitable triple stacked gate insulator shows only 0.23 V threshold voltage shift.

Effects of Electron Flow Current Density on Flow Impedance of Magnetically Insulated Transmission Lines

International Nuclear Information System (INIS)

He Yong; Zou Wen-Kang; Song Sheng-Yi

2011-01-01

In modern pulsed power systems, magnetically insulated transmission lines (MITLs) are used to couple power between the driver and the load. The circuit parameters of MITLs are well understood by employing the concept of flow impedance derived from Maxwell's equations and pressure balance across the flow. However, the electron density in an MITL is always taken as constant in the application of flow impedance. Thus effects of electron flow current density (product of electron density and drift velocity) in an MITL are neglected. We calculate the flow impedances of an MITL and compare them under three classical MITL theories, in which the electron density profile and electron flow current density are different from each other. It is found that the assumption of constant electron density profile in the calculation of the flow impedance is not always valid. The electron density profile and the electron flow current density have significant effects on flow impedance of the MITL. The details of the electron flow current density and its effects on the operation impedance of the MITL should be addressed more explicitly by experiments and theories in the future. (nuclear physics)

Gender Analysis Of Electronic Information Resource Use: The Case ...

African Journals Online (AJOL)

Based on the findings the study concluded that access and use of electronic information resources creates a “social digital divide” along gender lines. The study ... Finally, the library needs to change its marketing strategies on the availability of electronic information resources to increase awareness of these resources.

On effective holographic Mott insulators

Energy Technology Data Exchange (ETDEWEB)

Baggioli, Matteo; Pujolàs, Oriol [Institut de Física d’Altes Energies (IFAE), Universitat Autònoma de Barcelona,The Barcelona Institute of Science and Technology,Campus UAB, 08193 Bellaterra (Barcelona) (Spain)

2016-12-20

We present a class of holographic models that behave effectively as prototypes of Mott insulators — materials where electron-electron interactions dominate transport phenomena. The main ingredient in the gravity dual is that the gauge-field dynamics contains self-interactions by way of a particular type of non-linear electrodynamics. The electrical response in these models exhibits typical features of Mott-like states: i) the low-temperature DC conductivity is unboundedly low; ii) metal-insulator transitions appear by varying various parameters; iii) for large enough self-interaction strength, the conductivity can even decrease with increasing doping (density of carriers) — which appears as a sharp manifestation of ‘traffic-jam’-like behaviour; iv) the insulating state becomes very unstable towards superconductivity at large enough doping. We exhibit some of the properties of the resulting insulator-superconductor transition, which is sensitive to the momentum dissipation rate in a specific way. These models imply a clear and generic correlation between Mott behaviour and significant effects in the nonlinear electrical response. We compute the nonlinear current-voltage curve in our model and find that indeed at large voltage the conductivity is largely reduced.

On effective holographic Mott insulators

International Nuclear Information System (INIS)

Baggioli, Matteo; Pujolàs, Oriol

2016-01-01

We present a class of holographic models that behave effectively as prototypes of Mott insulators — materials where electron-electron interactions dominate transport phenomena. The main ingredient in the gravity dual is that the gauge-field dynamics contains self-interactions by way of a particular type of non-linear electrodynamics. The electrical response in these models exhibits typical features of Mott-like states: i) the low-temperature DC conductivity is unboundedly low; ii) metal-insulator transitions appear by varying various parameters; iii) for large enough self-interaction strength, the conductivity can even decrease with increasing doping (density of carriers) — which appears as a sharp manifestation of ‘traffic-jam’-like behaviour; iv) the insulating state becomes very unstable towards superconductivity at large enough doping. We exhibit some of the properties of the resulting insulator-superconductor transition, which is sensitive to the momentum dissipation rate in a specific way. These models imply a clear and generic correlation between Mott behaviour and significant effects in the nonlinear electrical response. We compute the nonlinear current-voltage curve in our model and find that indeed at large voltage the conductivity is largely reduced.

Users satisfaction with electronic information resources and services ...

African Journals Online (AJOL)

This study investigated users satisfaction on the use of electronic information resources and services in MTN Net libraries in ABU & UNIBEN. Two objectives and one null hypotheses were formulated and tested with respect to the users' satisfaction on electronic information resources and services in MTN Net libraries in ...

Critical metal-insulator transition and divergence in a two-particle irreducible vertex in disordered and interacting electron systems

Czech Academy of Sciences Publication Activity Database

Janiš, Václav; Pokorný, Vladislav

2014-01-01

Roč. 90, č. 4 (2014), "045143-1"-"045143-11" ISSN 1098-0121 Institutional support: RVO:68378271 Keywords : metal-insulator transition * disordered and interacting electron systems * dynamical mean-field theory * critical behavior Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.736, year: 2014

Improved thermal monitoring of rotating machine insulation

International Nuclear Information System (INIS)

Stone, G.C.; Sedding, H.G.; Bernstein, B.S.

1991-01-01

Aging of motor and generator insulation is most often induced as a result of operation at high temperatures. In spite of this knowledge, stator and rotor temperatures are only crudely monitored in existing machines. In EPRI project RP2577-1, three new means of detecting machine temperatures were successfully developed. Two of the techniques, the Electronic Rotor Temperature Sensor and the Passive Rotor Temperature Sensor, were specifically developed to give point temperature readings on turbine generator rotor windings. The Insulation Sniffer allows operators to determine when any electrical insulation in a motor is overheating. Another electronic device, called the Thermal Life Indicator, helps operators and maintenance personnel determine how accumulated operation has affected the remaining life of the insulation in rotating machines. These new devices permit nuclear station operators to avoid hazardous operating conditions and will help to determine priorities for maintenance and plant life extension programs

Electron excitation relaxation in wide-gap single crystal insulators under swift heavy-ion irradiation

International Nuclear Information System (INIS)

Yavlinskii, Yu.N.

2000-01-01

A heavy, multicharged ion moving in a solid interacts with nuclei and electrons of the matter atoms. If the projectile velocity exceeds the typical orbital velocity of the target electrons, the main process is excitation of the electronic subsystem, i.e., excitation and ionization of bound electrons. Initially, relaxation of the electron excitations results from electronic processes alone, and energy transfer from electrons to lattice happens later. Since free charge carriers are absent in insulators before irradiation, the motion of the excited electrons is possible only together with holes. Due to inner pressure of the electron-hole plasma the expansion takes place. The velocity of the expansion is determined by the heat velocity of electron-hole pairs. As the excitation region expands, the density of the electron-hole pairs decreases, the average distance between pairs increases, and excitons are produced. The expansion can be terminated in the time t≅10 -13 s, when, due to the electron-phonon interaction, self-trapped holes (and excitons) are formed. The annihilation of the trapped excitons gives rise to Frenkel defects. The set of equations comprising the continuity equation, the Euler equation and energy conservation is considered. The analytic dependence on time of the electron temperature and the radius of the excitation region is derived. The observation of projectile traces in a target is discussed in the single projectile regime

Voltage-driven magnetization control in topological insulator/magnetic insulator heterostructures

Directory of Open Access Journals (Sweden)

Michael E. Flatté

2017-05-01

Full Text Available A major barrier to the development of spin-based electronics is the transition from current-driven spin torque, or magnetic-field-driven magnetization reversal, to a more scalable voltage-driven magnetization reversal. To achieve this, multiferroic materials appear attractive, however the effects in current materials occur at very large voltages or at low temperatures. Here the potential of a new class of hybrid multiferroic materials is described, consisting of a topological insulator adjacent to a magnetic insulator, for which an applied electric field reorients the magnetization. As these materials lack conducting states at the chemical potential in their bulk, no dissipative charge currents flow in the bulk. Surface states at the interface, if present, produce effects similar to surface recombination currents in bipolar devices, but can be passivated using magnetic doping. Even without conducting states at the chemical potential, for a topological insulator there is a finite spin Hall conductivity provided by filled bands below the chemical potential. Spin accumulation at the interface with the magnetic insulator provides a torque on the magnetization. Properly timed voltage pulses can thus reorient the magnetic moment with only the flow of charge current required in the leads to establish the voltage. If the topological insulator is sufficiently thick the resulting low capacitance requires little charge current.

Measure Guideline: Basement Insulation Basics

Energy Technology Data Exchange (ETDEWEB)

Aldrich, R.; Mantha, P.; Puttagunta, S.

2012-10-01

This guideline is intended to describe good practices for insulating basements in new and existing homes, and is intended to be a practical resources for building contractors, designers, and also to homeowners.

Key-Insulated Undetachable Digital Signature Scheme and Solution for Secure Mobile Agents in Electronic Commerce

Directory of Open Access Journals (Sweden)

Yang Shi

2016-01-01

Full Text Available Considering the security of both the customers’ hosts and the eShops’ servers, we introduce the idea of a key-insulated undetachable digital signature, enabling mobile agents to generate undetachable digital signatures on remote hosts with the key-insulated property of the original signer’s signing key. From the theoretical perspective, we provide the formal definition and security notion of a key-insulated undetachable digital signature. From the practical perspective, we propose a concrete scheme to secure mobile agents in electronic commerce. The scheme is mainly focused on protecting the signing key from leakage and preventing the misuse of the signature algorithm on malicious servers. Agents do not carry the signing key when they generate digital signatures on behalf of the original signer, so the key is protected on remote servers. Furthermore, if a hacker gains the signing key of the original signer, the hacker is still unable to forge a signature for any time period other than the key being accessed. In addition, the encrypted function is combined with the original signer’s requirement to prevent the misuse of signing algorithm. The scheme is constructed on gap Diffie–Hellman groups with provable security, and the performance testing indicates that the scheme is efficient.

Numerical simulations of quantum many-body systems with applications to superfluid-insulator and metal-insulator transitions

International Nuclear Information System (INIS)

Niyaz, P.

1993-01-01

Quantum Monte Carlo techniques were used to study two quantum many-body systems, the one-dimensional extended boson-Hubbard Hamiltonian, a model of superfluid-insulator quantum phase transitions, and the two-dimensional Holstein Model, a model for electron-phonon interactions. For the extended boson-Hubbard model, the authors studied the ground state properties at commensurate filling (density = 1) and half-integer filling (density = 1/2). At commensurate filling, the system has two possible insulating phases for strong coupling. If the on-site repulsion dominates, the system freezes into an insulating phase where each site is singly occupied. If the intersite repulsion dominates, doubly occupied and empty sites alternate. At weak coupling, the system becomes a superfluid. The authors investigated the order of phase transitions between these different phases. At half-integer filling, the authors found one strong coupling insulating phase, where singly occupied and empty sites alternate, and a weak coupling superfluid phase. The authors also investigated the possibility of a supersolid phase and found no clear evidence of such a new phase. For the electron-phonon (Holstein) model, the authors focused on the finite temperature phase transition from a metallic state to an insulating charge density wave (CDW) state as the temperature is lowered. The authors present the first calculation of the spectral density from Monte Carlo data for this system. The authors also investigated the formation of a CDW state as a function of various parameters characterizing the electron-phonon interactions. Using these numerical results as benchmarks, the authors then investigated different levels of Migdal approximations. The authors found the solutions of a set of gapped Migdal-Eliashberg equations agreed qualitatively with the Monte Carlo results

Electron paramagnetic resonance of isolated Assub(Ga)+ antisite defect in neutron-transmutation doped semi-insulating GaAs

International Nuclear Information System (INIS)

Manasreh, M.O.; McDonald, P.F.; Kivlighn, S.A.; Minton, J.T.; Covington, B.C.

1988-01-01

The isolated Assub(Ga) antisite defect produced by the neutron-transmutation doping in semi-insulating GaAs was studied using the electron paramagnetic resonance technique. The results show that the optically induced quenching of the isolated Assub(Ga) + antisite defect is quite different from that of the EL2 center. Illumination with white light seems to always reduce the electron paramagnetic resonance spectrum suggesting that depopulation of the EL2 center does not introduce a noticeable change in the Assub(Ga) + antisite concentration. (author)

Temperature dependence of the electronic structure of semiconductors and insulators

Energy Technology Data Exchange (ETDEWEB)

Poncé, S., E-mail: samuel.pon@gmail.com; Gillet, Y.; Laflamme Janssen, J.; Gonze, X. [European Theoretical Spectroscopy Facility and Institute of Condensed Matter and Nanosciences, Université catholique de Louvain, Chemin des étoiles 8, bte L07.03.01, B-1348 Louvain-la-neuve (Belgium); Marini, A. [Consiglio Nazionale delle Ricerche (CNR), Via Salaria Km 29.3, CP 10, 00016 Monterotondo Stazione (Italy); Verstraete, M. [European Theoretical Spectroscopy Facility and Physique des matériaux et nanostructures, Université de Liège, Allée du 6 Août 17, B-4000 Liège (Belgium)

2015-09-14

The renormalization of electronic eigenenergies due to electron-phonon coupling (temperature dependence and zero-point motion effect) is sizable in many materials with light atoms. This effect, often neglected in ab initio calculations, can be computed using the perturbation-based Allen-Heine-Cardona theory in the adiabatic or non-adiabatic harmonic approximation. After a short description of the recent progresses in this field and a brief overview of the theory, we focus on the issue of phonon wavevector sampling convergence, until now poorly understood. Indeed, the renormalization is obtained numerically through a slowly converging q-point integration. For non-zero Born effective charges, we show that a divergence appears in the electron-phonon matrix elements at q → Γ, leading to a divergence of the adiabatic renormalization at band extrema. This problem is exacerbated by the slow convergence of Born effective charges with electronic wavevector sampling, which leaves residual Born effective charges in ab initio calculations on materials that are physically devoid of such charges. Here, we propose a solution that improves this convergence. However, for materials where Born effective charges are physically non-zero, the divergence of the renormalization indicates a breakdown of the adiabatic harmonic approximation, which we assess here by switching to the non-adiabatic harmonic approximation. Also, we study the convergence behavior of the renormalization and develop reliable extrapolation schemes to obtain the converged results. Finally, the adiabatic and non-adiabatic theories, with corrections for the slow Born effective charge convergence problem (and the associated divergence) are applied to the study of five semiconductors and insulators: α-AlN, β-AlN, BN, diamond, and silicon. For these five materials, we present the zero-point renormalization, temperature dependence, phonon-induced lifetime broadening, and the renormalized electronic band structure.

Surface potential measurement of negative-ion-implanted insulators by analysing secondary electron energy distribution

International Nuclear Information System (INIS)

Toyota, Yoshitaka; Tsuji, Hiroshi; Nagumo, Syoji; Gotoh, Yasuhito; Ishikawa, Junzo; Sakai, Shigeki.

1994-01-01

The negative ion implantation method we have proposed is a noble technique which can reduce surface charging of isolated electrodes by a large margin. In this paper, the way to specify the surface potential of negative-ion-implanted insulators by the secondary electron energy analysis is described. The secondary electron energy distribution is obtained by a retarding field type energy analyzer. The result shows that the surface potential of fused quartz by negative-ion implantation (C - with the energy of 10 keV to 40 keV) is negatively charged by only several volts. This surface potential is extremely low compared with that by positive-ion implantation. Therefore, the negative-ion implantation is a very effective method for charge-up free implantation without charge compensation. (author)

Organizational matters of competition in electronic educational resources

Directory of Open Access Journals (Sweden)

Ирина Карловна Войтович

2015-12-01

Full Text Available The article examines the experience of the Udmurt State University in conducting competitions of educational publications and electronic resources. The purpose of such competitions is to provide methodological support to educational process. The main focus is on competition of electronic educational resources. The technology of such contests is discussed through detailed analysis of the main stages of the contest. It is noted that the main task of the preparatory stage of the competition is related to the development of regulations on competition and the definition of criteria for selection of the submitted works. The paper also proposes a system of evaluation criteria of electronic educational resources developed by members of the contest organizing committee and jury members. The article emphasizes the importance of not only the preparatory stages of the competition, but also measures for its completion, aimed at training teachers create quality e-learning resources.

Interaction between extended and localized electronic states in the region of the metal to insulator transition in semiconductor alloys

Energy Technology Data Exchange (ETDEWEB)

Teubert, Joerg

2008-07-01

The first part of this work addresses the influence of those isovalent localized states on the electronic properties of (B,Ga,In)As. Most valuable were the measurements under hydrostatic pressure that revealed a pressure induced metal-insulator transition. One of the main ideas in this context is the trapping of carriers in localized B-related cluster states that appear in the bandgap at high pressure. The key conclusion that can be drawn from the experimental results is that boron atoms seem to have the character of isovalent electron traps, rendering boron as the first known isovalent trap induced by cationic substitution. In the second part, thermoelectric properties of (B,Ga,In)As and (Ga,In)(N,As) are studied. It was found that although the electric-field driven electronic transport in n-type (Ga,In)(N,As) and (B,Ga,In)As differs considerably from that of n-type GaAs, the temperature-gradient driven electronic transport is very similar for the three semiconductors, despite distinct differences in the conduction band structure of (Ga,In)(N,As) and (B,Ga,In)As compared to GaAs. The third part addresses the influence of magnetic interactions on the transport properties near the metal-insulator transition (MIT). Here, two scenarios are considered: Firstly the focus is set on ZnMnSe:Cl, a representative of so called dilute magnetic semiconductors (DMS). In this material Mn(2+) ions provide a large magnetic moment due to their half filled inner 3d-shell. It is shown that magnetic interactions in conjunction with disorder effects are responsible for the unusual magnetotransport behavior found in this and other II-Mn-VI semiconductor alloys. In the second scenario, a different magnetic compound, namely InSb:Mn, is of interest. It is a representative of the III-Mn-V DMS, where the magnetic impurity Mn serves both as the source of a large localized magnetic moment and as the source of a loosely bound hole due to its acceptor character. Up to now, little is known about

Interaction between extended and localized electronic states in the region of the metal to insulator transition in semiconductor alloys

International Nuclear Information System (INIS)

Teubert, Joerg

2008-01-01

The first part of this work addresses the influence of those isovalent localized states on the electronic properties of (B,Ga,In)As. Most valuable were the measurements under hydrostatic pressure that revealed a pressure induced metal-insulator transition. One of the main ideas in this context is the trapping of carriers in localized B-related cluster states that appear in the bandgap at high pressure. The key conclusion that can be drawn from the experimental results is that boron atoms seem to have the character of isovalent electron traps, rendering boron as the first known isovalent trap induced by cationic substitution. In the second part, thermoelectric properties of (B,Ga,In)As and (Ga,In)(N,As) are studied. It was found that although the electric-field driven electronic transport in n-type (Ga,In)(N,As) and (B,Ga,In)As differs considerably from that of n-type GaAs, the temperature-gradient driven electronic transport is very similar for the three semiconductors, despite distinct differences in the conduction band structure of (Ga,In)(N,As) and (B,Ga,In)As compared to GaAs. The third part addresses the influence of magnetic interactions on the transport properties near the metal-insulator transition (MIT). Here, two scenarios are considered: Firstly the focus is set on ZnMnSe:Cl, a representative of so called dilute magnetic semiconductors (DMS). In this material Mn(2+) ions provide a large magnetic moment due to their half filled inner 3d-shell. It is shown that magnetic interactions in conjunction with disorder effects are responsible for the unusual magnetotransport behavior found in this and other II-Mn-VI semiconductor alloys. In the second scenario, a different magnetic compound, namely InSb:Mn, is of interest. It is a representative of the III-Mn-V DMS, where the magnetic impurity Mn serves both as the source of a large localized magnetic moment and as the source of a loosely bound hole due to its acceptor character. Up to now, little is known about

Insulating characteristics of polyvinyl alcohol for integrated electronics

International Nuclear Information System (INIS)

Van Etten, Eliana A.; Ximenes, Eder S.; Tarasconi, Lucas T.; Garcia, Irene T.S.; Forte, Maria M.C.; Boudinov, Henri

2014-01-01

The aim of this work is to evaluate the effects of molecular weight, hydrolysis degree, and cross-link on the performance of Polyvinyl Alcohol (PVA) when applied as dielectric material in organic field effect transistors. For this purpose, metal–insulator-structures and polymeric films were characterized. The polymer structure was analyzed by thermogravimetry and calorimetry, and the electrical characterization of the films was performed through current–voltage and capacitance–voltage curves; and dielectric spectrometry. Cross-linkage, followed by hydrolysis degree, presented the major impact on polymer properties, due to the strong influence on chain mobility. The chain mobility increases the dielectric response and decreases the insulation capacity, generating the need to compromise between these two properties. The largest drawback encountered was the high sensitivity of the films to ambient humidity. The best performance of the organic insulator was obtained from cross-linked films made of an incompletely hydrolyzed PVA. - Highlights: • Effect of molecular weight, hydrolysis and cross-link on polyvinyl alcohol (PVA) dielectric • Cross-linkage, followed by hydrolysis, showed the major impact on properties. • Cross-linkage followed by hydrolysis showed the strongest effect on chain mobility. • Best dielectric performance: cross-linked films made of incompletely hydrolyzed PVA • Largest drawback is the high sensitivity of the films to ambient humidity

Electronic tunneling through a potential barrier on the surface of a topological insulator

Science.gov (United States)

Zhou, Benliang; Zhou, Benhu; Zhou, Guanghui

2016-12-01

We investigate the tunneling transport for electrons on the surface of a topological insulator (TI) through an electrostatic potential barrier. By using the Dirac equation with the continuity conditions for all segments of wave functions at the interfaces between regions inside and outside the barrier, we calculate analytically the transmission probability and conductance for the system. It is demonstrated that, the Klein paradox can also been observed in the system same as in graphene system. Interestingly, the conductance reaches the minimum value when the incident electron energy is equal to the barrier strength. Moreover, with increasing barrier width, the conductance turns up some tunneling oscillation peaks, and larger barrier strength can cause lower conductance, shorter period but larger oscillation amplitude. The oscillation amplitude decreases as the barrier width increases, which is similar as that of the system consisting of the compressive uniaxial strain applied on a TI, but somewhat different from that of graphene system where the oscillation amplitude is a constant. The findings here imply that an electrostatic barrier can greatly influence the electron tunneling transport of the system, and may provide a new way to realize directional filtering of electrons.

Magnetically insulated transmission line oscillator

Science.gov (United States)

Bacon, L.D.; Ballard, W.P.; Clark, M.C.; Marder, B.M.

1987-05-19

A magnetically insulated transmission line oscillator employs self-generated magnetic fields to generate microwave energy. An anode of the oscillator includes slow-wave structures which are formed of a plurality of thin conductive vanes defining cavities therebetween, and a gap is formed between the anode and a cathode of the oscillator. In response to a pulsed voltage applied to the anode and cathode, self-generated magnetic fields are produced in a cross-field orientation with respect to the orientation of the electric field between the anode and the cathode. The cross-field magnetic fields insulate the flow of electrons in the gap and confine the flow of electrons within the gap. 11 figs.

CHALLENGES OF ELECTRONIC INFORMATION RESOURCES IN ...

African Journals Online (AJOL)

This paper discusses the role of policy for proper and efficient library services in the electronic era. It points out some of the possible dangers of embarking in electronic resources without a proper focus at hand. Thus, it calls for today's librarians and policy makers to brainstorm and come up with working policies suitable to ...

Coupling of an applied field magnetically insulated ion diode to a high power magnetically insulated transmission line system

International Nuclear Information System (INIS)

Maenchen, J.E.

1983-01-01

The coupling of energy from a high power pulsed accelerator through a long triplate magnetically insulated transmission line (MITL) in vacuum to an annular applied magnetic field insulated extraction ion diode is examined. The narrow power transport window and the wave front erosion of the MITL set stringent impedance history conditions on the diode load. A new ion diode design developed to satisfy these criteria with marginal electron insulation is presented. The LION accelerator is used to provide a positive polarity 1.5 MV, 350 kA, 40 ns FWHM pulse with a 30 kA/ns current rate from a triplate MITL source. A transition converts the triplate into a cylindrical cross section which flares into the ion diode load. Extensive current and voltage measurements performed along this structure and on the extracted ion beam provide conclusive evidence that the self insulation condition of the MITL is maintained in the transition by current loss alone. The ion diode utilizes a radial magnetic field between a grounded cathode annular emission tip and a disk anode. A 50 cm 2 dielectric/metal anode area serves as the ion plasma source subject to direct electron bombardment from the opposing cathode tip under marginal magnetic insulation conditions. The ions extracted cross the radial magnetic field and exit the diode volume as an annular cross section beam of peak current about 100 kA. The diode current gradually converts from the initial electron flow to nearly 100% ion current after 30 ns, coupling 60% of the diode energy into ions

Power flow studies of magnetically insulated lines

International Nuclear Information System (INIS)

McDaniel, D.H.; Poukey, J.W.; Bergeron, K.D.; VanDevender, J.P.; Johnson, D.L.

1977-01-01

The designs for relativistic electron beam accelerators with power levels of 20 to 100 TW are greatly restricted by the inductance of a single diode of reasonable size. This fact leads to modular designs of very large accelerators. One concept uses several small insulators at a large radius arranged around the accelerator center. The total effective inductance is then low, but the energy must then be transported by self-magnetic insulated vacuum lines to the target volume. A triplate vacuum line configuration eases many mechanical support problems and allows more A-K gaps or feeds to be packaged around a given radius. This type of vacuum transmission line was chosen for initial experiments at Sandia. The experiments were conducted on the MITE (Magnetically Insulated Transmission Experiment) accelerator. The water pulse forming lines are connected to a vacuum triplate line through a conventional stacked insulator. Diagnostics on the experiment consisted of: (1) input V; (2) input I; (3) I monitors at the input, middle, and output of both the center conductor and ground plane of the transmission line; (4) magnetic energy analyzer to view peak electron energy in the A-K gap; (5) calorimetry; and (6) Faraday cups to look at electron current flowing across the transmission line. The main goal of the experiment is to obtain input impedance of the transmission line as a function of voltage and to measure electron loss currents. These measurements are compared to theoretical models for the input impedance and energy losses

Tetradymites as thermoelectrics and topological insulators

Science.gov (United States)

Heremans, Joseph P.; Cava, Robert J.; Samarth, Nitin

2017-10-01

Tetradymites are M2X3 compounds — in which M is a group V metal, usually Bi or Sb, and X is a group VI anion, Te, Se or S — that crystallize in a rhombohedral structure. Bi2Se3, Bi2Te3 and Sb2Te3 are archetypical tetradymites. Other mixtures of M and X elements produce common variants, such as Bi2Te2Se. Because tetradymites are based on heavy p-block elements, strong spin-orbit coupling greatly influences their electronic properties, both on the surface and in the bulk. Their surface electronic states are a cornerstone of frontier work on topological insulators. The bulk energy bands are characterized by small energy gaps, high group velocities, small effective masses and band inversion near the centre of the Brillouin zone. These properties are favourable for high-efficiency thermoelectric materials but make it difficult to obtain an electrically insulating bulk, which is a requirement of topological insulators. This Review outlines recent progress made in bulk and thin-film tetradymite materials for the optimization of their properties both as thermoelectrics and as topological insulators.

Electron tunneling studies of ultrathin films near the superconductor-to-insulator transition

International Nuclear Information System (INIS)

Valles, J.M. Jr.; Garno, J.P.

1994-01-01

Electron tunneling measurements on ultrathin quench-condensed films near the superconductor-to-insulator (SI) transition reveal that the superconducting state degrades with increasing normal state sheet resistance, R □ , in a manner that depends strongly on film morphology. In homogeneously disordered films, the superconducting energy gap Δ 0 decreases continuously and appears to go to zero at the SI transition. In granular films the transport properties degrade while Δ 0 remains constant. Measurements in the normal state reveal disorder enhanced e - -e - interaction corrections to the density of states. These effects are strong and depend on morphology in a manner that is consistent with their playing an important role in driving the SI transition. (orig.)

Semiconductor of spinons: from Ising band insulator to orthogonal band insulator.

Science.gov (United States)

Farajollahpour, T; Jafari, S A

2018-01-10

We use the ionic Hubbard model to study the effects of strong correlations on a two-dimensional semiconductor. The spectral gap in the limit where on-site interactions are zero is set by the staggered ionic potential, while in the strong interaction limit it is set by the Hubbard U. Combining mean field solutions of the slave spin and slave rotor methods, we propose two interesting gapped phases in between: (i) the insulating phase before the Mott phase can be viewed as gapping a non-Fermi liquid state of spinons by the staggered ionic potential. The quasi-particles of underlying spinons are orthogonal to physical electrons, giving rise to the 'ARPES-dark' state where the ARPES gap will be larger than the optical and thermal gap. (ii) The Ising insulator corresponding to ordered phase of the Ising variable is characterized by single-particle excitations whose dispersion is controlled by Ising-like temperature and field dependences. The temperature can be conveniently employed to drive a phase transition between these two insulating phases where Ising exponents become measurable by ARPES and cyclotron resonance. The rare earth monochalcogenide semiconductors where the magneto-resistance is anomalously large can be a candidate system for the Ising band insulator. We argue that the Ising and orthogonal insulating phases require strong enough ionic potential to survive the downward renormalization of the ionic potential caused by Hubbard U.

Semiconductor of spinons: from Ising band insulator to orthogonal band insulator

Science.gov (United States)

Farajollahpour, T.; Jafari, S. A.

2018-01-01

We use the ionic Hubbard model to study the effects of strong correlations on a two-dimensional semiconductor. The spectral gap in the limit where on-site interactions are zero is set by the staggered ionic potential, while in the strong interaction limit it is set by the Hubbard U. Combining mean field solutions of the slave spin and slave rotor methods, we propose two interesting gapped phases in between: (i) the insulating phase before the Mott phase can be viewed as gapping a non-Fermi liquid state of spinons by the staggered ionic potential. The quasi-particles of underlying spinons are orthogonal to physical electrons, giving rise to the ‘ARPES-dark’ state where the ARPES gap will be larger than the optical and thermal gap. (ii) The Ising insulator corresponding to ordered phase of the Ising variable is characterized by single-particle excitations whose dispersion is controlled by Ising-like temperature and field dependences. The temperature can be conveniently employed to drive a phase transition between these two insulating phases where Ising exponents become measurable by ARPES and cyclotron resonance. The rare earth monochalcogenide semiconductors where the magneto-resistance is anomalously large can be a candidate system for the Ising band insulator. We argue that the Ising and orthogonal insulating phases require strong enough ionic potential to survive the downward renormalization of the ionic potential caused by Hubbard U.

Controlling electron transfer processes on insulating surfaces with the non-contact atomic force microscope.

Science.gov (United States)

Trevethan, Thomas; Shluger, Alexander

2009-07-01

We present the results of theoretical modelling that predicts how a process of transfer of single electrons between two defects on an insulating surface can be induced using a scanning force microscope tip. A model but realistic system is employed which consists of a neutral oxygen vacancy and a noble metal (Pt or Pd) adatom on the MgO(001) surface. We show that the ionization potential of the vacancy and the electron affinity of the metal adatom can be significantly modified by the electric field produced by an ionic tip apex at close approach to the surface. The relative energies of the two states are also a function of the separation of the two defects. Therefore the transfer of an electron from the vacancy to the metal adatom can be induced either by the field effect of the tip or by manipulating the position of the metal adatom on the surface.

Use of Electronic Resources in a Private University in Nigeria ...

African Journals Online (AJOL)

The study examined awareness and constraints in the use of electronic resources by lecturers and students of Ajayi Crowther University, Oyo, Nigeria. It aimed at justifying the resources expended in the provision of electronic resources in terms of awareness, patronage and factors that may be affecting awareness and use ...

Electronic Resources Management System: Recommendation Report 2017

KAUST Repository

Ramli, Rindra M.

2017-05-01

This recommendation report provides an overview of the selection process for the new Electronic Resources Management System. The library has decided to move away from Innovative Interfaces Millennium ERM module. The library reviewed 3 system as potential replacements namely: Proquest 360 Resource Manager, Ex Libris Alma and Open Source CORAL ERMS. After comparing and trialling the systems, it was decided to go for Proquest 360 Resource Manager.

Reentrant Metal-Insulator Transitions in Silicon -

Science.gov (United States)

Campbell, John William M.

This thesis describes a study of reentrant metal -insulator transitions observed in the inversion layer of extremely high mobility Si-MOSFETs. Magneto-transport measurements were carried out in the temperature range 20mK-4.2 K in a ^3He/^4 He dilution refrigerator which was surrounded by a 15 Tesla superconducting magnet. Below a melting temperature (T_{M}~500 mK) and a critical electron density (n_{s }~9times10^{10} cm^{-2}), the Shubnikov -de Haas oscillations in the diagonal resistivity enormous maximum values at the half filled Landau levels while maintaining deep minima corresponding to the quantum Hall effect at filled Landau levels. At even lower electron densities the insulating regions began to spread and eventually a metal-insulator transition could be induced at zero magnetic field. The measurement of extremely large resistances in the milliKelvin temperature range required the use of very low currents (typically in the 10^ {-12} A range) and in certain measurements minimizing the noise was also a consideration. The improvements achieved in these areas through the use of shielding, optical decouplers and battery operated instruments are described. The transport signatures of the insulating state are considered in terms of two basic mechanisms: single particle localization with transport by variable range hopping and the formation of a collective state such as a pinned Wigner crystal or electron solid with transport through the motion of bound dislocation pairs. The experimental data is best described by the latter model. Thus the two dimensional electron system in these high mobility Si-MOSFETs provides the first and only experimental demonstration to date of the formation of an electron solid at zero and low magnetic fields in the quantum limit where the Coulomb interaction energy dominates over the zero point oscillation energy. The role of disorder in favouring either single particle localization or the formation of a Wigner crystal is explored by

use of electronic resources by graduate students of the department

African Journals Online (AJOL)

respondent's access electronic resources from the internet via Cybercafé .There is a high ... KEY WORDS: Use, Electronic Resources, Graduate Students, Cybercafé. INTRODUCTION ... Faculty of Education, University of Uyo, Uyo. Olu Olat ...

An experimental study on thermal properties of composite insulation

Energy Technology Data Exchange (ETDEWEB)

Choi, Gyoung-Seok [Building and Urban Research Department, Korea Institute of Construction Technology, 2311 Daehwa-Dong, Ilsanseo-Gu, Goyang-Si, Gyeonggi-Do 411-712 (Korea); College of Architecture, Hanyang University, 17, Hangdang-Dong, Sungdong-Gu, Seoul 133-791 (Korea); Kang, Jae-Sik; Jeong, Young-Sun; Lee, Seung-Eon [Building and Urban Research Department, Korea Institute of Construction Technology, 2311 Daehwa-Dong, Ilsanseo-Gu, Goyang-Si, Gyeonggi-Do 411-712 (Korea); Sohn, Jang-Yeul [College of Architecture, Hanyang University, 17, Hangdang-Dong, Sungdong-Gu, Seoul 133-791 (Korea)

2007-04-01

In accordance with the insulation standards reinforced since 2001 and the compulsory standards on floor impact sound insulation that have been enforced since 2004, insulation materials for actual buildings have been converted to composite materials and new insulation materials have been released in the market. However, Korea is lagging behind the world in fundamental experimental studies and resources. In case of some composite insulation materials, there also have been problems of distorted performance occurring as a result of tests being conducted without having verification and evaluation on the accuracy and inaccuracy of such tests. Therefore, this study grasped the thermal properties of composite insulation materials using thermal conductivity test equipment by heat flux method, and performed quantitative evaluation on the measurement precision and uncertainty of composite materials. (author)

Supporting documentation for the 1997 revision to the DOE Insulation Fact Sheet

Energy Technology Data Exchange (ETDEWEB)

Stovall, T.K.

1997-08-22

The Department of Energy (DOE) Insulation Fact Sheet has been revised to reflect developments in energy conservation technology and the insulation market. A nationwide insulation cost survey was made by polling insulation contractors and builders, and the results are reported here. These costs, along with regional weather data, regional fuel costs, and fuel-specific system efficiencies were used to produce recommended insulation levels for new and existing houses. This report contains all of the methodology, algorithms, assumptions, references, and data resources that were used to produce the 1997 DOE Insulation Fact Sheet.

Electronic properties of InAs-based metal-insulator-semiconductor structures

CERN Document Server

Kuryshev, G L; Valisheva, N A

2001-01-01

The peculiarities of electronic processes in InAs-based MIS structures operating in the charge injection device mode and using as photodetectors in spectral range 2.5-3.05 mu m are investigated. A two-layer system consisting of anodic oxide and low-temperature silicon dioxide is used as an insulator. It is shown that fluoride-containing components that is introduced into the electrolyte decreases the value of the built-in charge and the surface state static density down to minimal measurable values <= 2 x 10 sup 1 sup 0 cm sup - sup 2 eV sup - sup 2. Physical and chemical characteristics of the surface states at the InAs-dielectric interface are discussed on the basis of data on phase composition of anodic oxides obtained by means of X-ray photoelectronic spectroscopy. Anomalous field generation was also observed under the semiconductor non-equilibrium depletion. The processes of tunnel generation and the noise behavior of MIS structures under non-equilibrium depletion are investigated

Effects of ionizing radiation of electrical properites of refractory insulators

International Nuclear Information System (INIS)

van Lint, V.A.J.; Bunch, J.M.

1975-01-01

The Los Alamos Reference Theta Pinch Reactor (RTPR) requires on the first wall an electrical insulator which will withstand transient high voltage at high temperature 10 sec after severe neutron and ionizing irradiation. Few measurements of electrical parameters for heavily disordered refractory insulators have been reported; estimates are made as to whether breakdown strength or conductivity will be degraded by the irradiation. The approach treats separately short-term ionization effects (free and trapped electrons and holes) and long-term gross damage effects (transmutation products and various lattice defects). The following processes could produce unacceptable conduction across the first wall insulator: (a) delayed electronic conductivity 10 sec after the prompt ionization by bremsstrahlung; (b) prompt electronic conductivity from delayed ionization; (c) electronic breakdown; (d) electronic or ionic conductivity due to thermal motion in the disordered material, possibly leading to thermal breakdown. Worst-case calculations based on lower limits to recombination coefficients limit process (a) to sigma much less than 5 x 10 -14 mho/cm. Data on ionization-induced conductivity in insulators predict for process (b) sigma much less than 10 -8 mho/cm. Electronic breakdown generally occurs at fields well above the 10 5 V/cm required for RTPR. Thermal breakdown is negligible due to the short voltage pulse. Ionic and electronic conduction must be studied theoretically and experimentally in the type of highly disordered materials that result from neutron irradiation of the first wall

Electronic resource management practical perspectives in a new technical services model

CERN Document Server

Elguindi, Anne

2012-01-01

A significant shift is taking place in libraries, with the purchase of e-resources accounting for the bulk of materials spending. Electronic Resource Management makes the case that technical services workflows need to make a corresponding shift toward e-centric models and highlights the increasing variety of e-formats that are forcing new developments in the field.Six chapters cover key topics, including: technical services models, both past and emerging; staffing and workflow in electronic resource management; implementation and transformation of electronic resource management systems; the ro

Hot-Electron Bolometer Mixers on Silicon-on-Insulator Substrates for Terahertz Frequencies

Science.gov (United States)

Skalare, Anders; Stern, Jeffrey; Bumble, Bruce; Maiwald, Frank

2005-01-01

A terahertz Hot-Electron Bolometer (HEB) mixer design using device substrates based on Silicon-On-Insulator (SOI) technology is described. This substrate technology allows very thin chips (6 pm) with almost arbitrary shape to be manufactured, so that they can be tightly fitted into a waveguide structure and operated at very high frequencies with only low risk for power leakages and resonance modes. The NbTiN-based bolometers are contacted by gold beam-leads, while other beamleads are used to hold the chip in place in the waveguide test fixture. The initial tests yielded an equivalent receiver noise temperature of 3460 K double-sideband at a local oscillator frequency of 1.462 THz and an intermediate frequency of 1.4 GHz.

Utilization of electronic information resources by academic staff at ...

African Journals Online (AJOL)

The study investigated the utilization of Electronic Information resources by the academic staff of Makerere University in Uganda. It examined the academic staff awareness of the resources available, the types of resources provided by the Makerere University Library, the factors affecting resource utilization. The study was ...

Focused ion beam (FIB) milling of electrically insulating specimens using simultaneous primary electron and ion beam irradiation

International Nuclear Information System (INIS)

Stokes, D J; Vystavel, T; Morrissey, F

2007-01-01

There is currently great interest in combining focused ion beam (FIB) and scanning electron microscopy technologies for advanced studies of polymeric materials and biological microstructures, as well as for sophisticated nanoscale fabrication and prototyping. Irradiation of electrically insulating materials with a positive ion beam in high vacuum can lead to the accumulation of charge, causing deflection of the ion beam. The resultant image drift has significant consequences upon the accuracy and quality of FIB milling, imaging and chemical vapour deposition. A method is described for suppressing ion beam drift using a defocused, low-energy primary electron beam, leading to the derivation of a mathematical expression to correlate the ion and electron beam energies and currents with other parameters required for electrically stabilizing these challenging materials

Process for manufacture of Te microwire in glass insulation

International Nuclear Information System (INIS)

Bodiul, Pavel; Nicolaeva, Alibina; Konopko, Leonid; Bondarciuc, Nicolae

2010-01-01

The invention relates to the manufacturing of microwires in glass insulation and can be used in electronics and in the manufacturing of thermoelectrodes for thermoelectric sensors. The process for manufacture of Te microwire in glass insulation consists in softening the Te sample and its pulling in glass insulation. Near the microwire pulling zone through the furnace is maintained a temperature of 430-440 degrees Celsius, which causes the solidification firstly of Te microwire, and then of glass insulation. The result of the invention is to obtain Te microwires in glass insulation of high quality with a diameter of 50-100 μm and a length of 3-15 cm.

High-Resolution Faraday Rotation and Electron-Phonon Coupling in Surface States of the Bulk-Insulating Topological Insulator Cu_{0.02}Bi_{2}Se_{3}.

Science.gov (United States)

Wu, Liang; Tse, Wang-Kong; Brahlek, M; Morris, C M; Aguilar, R Valdés; Koirala, N; Oh, S; Armitage, N P

2015-11-20

We have utilized time-domain magnetoterahertz spectroscopy to investigate the low-frequency optical response of the topological insulator Cu_{0.02}Bi_{2}Se_{3} and Bi_{2}Se_{3} films. With both field and frequency dependence, such experiments give sufficient information to measure the mobility and carrier density of multiple conduction channels simultaneously. We observe sharp cyclotron resonances (CRs) in both materials. The small amount of Cu incorporated into the Cu_{0.02}Bi_{2}Se_{3} induces a true bulk insulator with only a single type of conduction with a total sheet carrier density of ~4.9×10^{12}/cm^{2} and mobility as high as 4000 cm^{2}/V·s. This is consistent with conduction from two virtually identical topological surface states (TSSs) on the top and bottom of the film with a chemical potential ~145 meV above the Dirac point and in the bulk gap. The CR broadens at high fields, an effect that we attribute to an electron-phonon interaction. This assignment is supported by an extended Drude model analysis of the zero-field Drude conductance. In contrast, in normal Bi_{2}Se_{3} films, two conduction channels were observed, and we developed a self-consistent analysis method to distinguish the dominant TSSs and coexisting trivial bulk or two-dimensional electron gas states. Our high-resolution Faraday rotation spectroscopy on Cu_{0.02}Bi_{2}Se_{3} paves the way for the observation of quantized Faraday rotation under experimentally achievable conditions to push the chemical potential in the lowest Landau level.

Ionization by ion impact at grazing incidence on insulator surface

CERN Document Server

Martiarena, M L

2003-01-01

We have calculated the energy distribution of electrons produced by ionization of the ionic crystal electrons in grazing fast ion-insulator surface collision. The ionized electrons originate in the 2p F sup - orbital. We observe that the binary peak appears as a double change in the slope of the spectra, in the high energy region. The form of the peak is determined by the initial electron distribution and its position will be affected by the binding energy of the 2p F sup - electron in the crystal. This BEP in insulator surfaces will appear slightly shifted to the low energy side with respect the ion-atom one.

Electronic Resources Management Project Presentation 2012

KAUST Repository

Ramli, Rindra M.

2012-01-01

This presentation describes the electronic resources management project undertaken by the KAUST library. The objectives of this project is to migrate information from MS Sharepoint to Millennium ERM module. One of the advantages of this migration

Development and preliminary experimental study on micro-stacked insulator

International Nuclear Information System (INIS)

Ren Chengyan; Yuan Weiqun; Zhang Dongdong; Yan Ping; Wang Jue

2009-01-01

High gradient insulating technology is one of the key technologies in new type dielectric wall accelerator(DWA). High gradient insulator, namely micro-stacked insulator, was developed and preliminary experimental study was done. Based on the finite element and particle simulating method, surface electric field distribution and electron movement track of micro-stacked insulator were numerated, and then the optimized design proposal was put forward. Using high temperature laminated method, we developed micro-stacked insulator samples which uses exhaustive fluorinated ethylene propylene(FEP) as dielectric layer and stainless steel as metal layer. Preliminary experiment of vacuum surface flashover in nanosecond pulse voltage was done and micro-stacked insulator exhibited favorable vacuum surface flashover performance with flashover field strength of near 180 kV/cm. (authors)

Aharonov–Bohm interference in topological insulator nanoribbons

KAUST Repository

Peng, Hailin

2009-12-13

Topological insulators represent unusual phases of quantum matter with an insulating bulk gap and gapless edges or surface states. The two-dimensional topological insulator phase was predicted in HgTe quantum wells and confirmed by transport measurements. Recently, Bi2 Se3 and related materials have been proposed as three-dimensional topological insulators with a single Dirac cone on the surface, protected by time-reversal symmetry. The topological surface states have been observed by angle-resolved photoemission spectroscopy experiments. However, few transport measurements in this context have been reported, presumably owing to the predominance of bulk carriers from crystal defects or thermal excitations. Here we show unambiguous transport evidence of topological surface states through periodic quantum interference effects in layered single-crystalline Bi2 Se3 nanoribbons, which have larger surface-to-volume ratios than bulk materials and can therefore manifest surface effects. Pronounced Aharonov-Bohm oscillations in the magnetoresistance clearly demonstrate the coherent propagation of two-dimensional electrons around the perimeter of the nanoribbon surface, as expected from the topological nature of the surface states. The dominance of the primary h/e oscillation, where h is Plancks constant and e is the electron charge, and its temperature dependence demonstrate the robustness of these states. Our results suggest that topological insulator nanoribbons afford promising materials for future spintronic devices at room temperature.

Three-dimensional fractional topological insulators in coupled Rashba layers

Science.gov (United States)

Volpez, Yanick; Loss, Daniel; Klinovaja, Jelena

2017-08-01

We propose a model of three-dimensional topological insulators consisting of weakly coupled electron- and hole-gas layers with Rashba spin-orbit interaction stacked along a given axis. We show that in the presence of strong electron-electron interactions the system realizes a fractional strong topological insulator, where the rotational symmetry and condensation energy arguments still allow us to treat the problem as quasi-one-dimensional with bosonization techniques. We also show that if Rashba and Dresselhaus spin-orbit interaction terms are equally strong, by doping the system with magnetic impurities, one can bring it into the Weyl semimetal phase.

Optical transitions in two-dimensional topological insulators with point defects

Science.gov (United States)

Sablikov, Vladimir A.; Sukhanov, Aleksei A.

2016-12-01

Nontrivial properties of electronic states in topological insulators are inherent not only to the surface and boundary states, but to bound states localized at structure defects as well. We clarify how the unusual properties of the defect-induced bound states are manifested in optical absorption spectra in two-dimensional topological insulators. The calculations are carried out for defects with short-range potential. We find that the defects give rise to the appearance of specific features in the absorption spectrum, which are an inherent property of topological insulators. They have the form of two or three absorption peaks that are due to intracenter transitions between electron-like and hole-like bound states.

Practical guide to electronic resources in the humanities

CERN Document Server

Dubnjakovic, Ana

2010-01-01

From full-text article databases to digitized collections of primary source materials, newly emerging electronic resources have radically impacted how research in the humanities is conducted and discovered. This book, covering high-quality, up-to-date electronic resources for the humanities, is an easy-to-use annotated guide for the librarian, student, and scholar alike. It covers online databases, indexes, archives, and many other critical tools in key humanities disciplines including philosophy, religion, languages and literature, and performing and visual arts. Succinct overviews of key eme

Utilisation of Electronic Information Resources By Lecturers in ...

African Journals Online (AJOL)

This study assesses the use of information resources, specifically, electronic databases by lecturers/teachers in Universities and Colleges of Education in South Western Nigeria. Information resources are central to teachers' education. It provides lecturers/teachers access to information that enhances research and ...

Experimental demonstration of anomalous Floquet topological insulator for sound

Science.gov (United States)

Peng, Yu-Gui; Qin, Cheng-Zhi; Zhao, De-Gang; Shen, Ya-Xi; Xu, Xiang-Yuan; Bao, Ming; Jia, Han; Zhu, Xue-Feng

2016-11-01

Time-reversal invariant topological insulator is widely recognized as one of the fundamental discoveries in condensed matter physics, for which the most fascinating hallmark is perhaps a spin-based topological protection, the absence of scattering of conduction electrons with certain spins on matter surface. Recently, it has created a paradigm shift for topological insulators, from electronics to photonics, phononics and mechanics as well, bringing about not only involved new physics but also potential applications in robust wave transport. Despite the growing interests in topologically protected acoustic wave transport, T-invariant acoustic topological insulator has not yet been achieved. Here we report experimental demonstration of anomalous Floquet topological insulator for sound: a strongly coupled metamaterial ring lattice that supports one-way propagation of pseudo-spin-dependent edge states under T-symmetry. We also demonstrate the formation of pseudo-spin-dependent interface states due to lattice dislocations and investigate the properties of pass band and band gap states.

Insulating Foams Save Money, Increase Safety

Science.gov (United States)

2009-01-01

Scientists at Langley Research Center created polyimide foam insulation for reusable cryogenic propellant tanks on the space shuttle. Meanwhile, a small Hialeah, Florida-based business, PolyuMAC Inc., was looking for advanced foams to use in the customized manufacturing of acoustical and thermal insulation. The company contacted NASA, licensed the material, and then the original inventors worked with the company's engineers to make a new material that was better for both parties. The new version, a high performance, flame retardant, flexible polyimide foam, is used for insulating NASA cryogenic propellant tanks and shows promise for use on watercraft, aircraft, spacecraft, electronics and electrical products, automobiles and automotive products, recreation equipment, and building and construction materials.

Step tunneling enhanced asymmetry in metal-insulator-insulator-metal (MIIM) diodes for rectenna applications

Science.gov (United States)

Alimardani, N.; Conley, J. F.

2013-09-01

We combine nanolaminate bilayer insulator tunnel barriers (Al2O3/HfO2, HfO2/Al2O3, Al2O3/ZrO2) deposited via atomic layer deposition (ALD) with asymmetric work function metal electrodes to produce MIIM diodes with enhanced I-V asymmetry and non-linearity. We show that the improvements in MIIM devices are due to step tunneling rather than resonant tunneling. We also investigate conduction processes as a function of temperature in MIM devices with Nb2O5 and Ta2O5 high electron affinity insulators. For both Nb2O5 and Ta2O5 insulators, the dominant conduction process is established as Schottky emission at small biases and Frenkel-Poole emission at large biases. The energy depth of the traps that dominate Frenkel-Poole emission in each material are estimated.

Electrohydrodynamic direct—writing of conductor—insulator-conductor multi-layer interconnection

International Nuclear Information System (INIS)

Zheng Gao-Feng; Pei Yan-Bo; Wang Xiang; Zheng Jian-Yi; Sun Dao-Heng

2014-01-01

A multi-layer interconnection structure is a basic component of electronic devices, and printing of the multi-layer interconnection structure is the key process in printed electronics. In this work, electrohydrodynamic direct-writing (EDW) is utilized to print the conductor—insulator—conductor multi-layer interconnection structure. Silver ink is chosen to print the conductor pattern, and a polyvinylpyrrolidone (PVP) solution is utilized to fabricate the insulator layer between the bottom and top conductor patterns. The influences of EDW process parameters on the line width of the printed conductor and insulator patterns are studied systematically. The obtained results show that the line width of the printed structure increases with the increase of the flow rate, but decreases with the increase of applied voltage and PVP content in the solution. The average resistivity values of the bottom and top silver conductor tracks are determined to be 1.34 × 10 −7 Ω·m and 1.39 × 10 −7 Ω·m, respectively. The printed PVP layer between the two conductor tracks is well insulated, which can meet the insulation requirement of the electronic devices. This study offers an alternative, fast, and cost-effective method of fabricating conductor—insulator—conductor multi-layer interconnections in the electronic industry

Discipline, availability of electronic resources and the use of Finnish National Electronic Library - FinELib

Directory of Open Access Journals (Sweden)

Sanna Torma

2004-01-01

Full Text Available This study elaborated relations between digital library use by university faculty, users' discipline and the availability of key resources in the Finnish National Electronic Library (FinELib, Finnish national digital library, by using nationwide representative survey data. The results show that the perceived availability of key electronic resources by researchers in FinELib was a stronger predictor of the frequency and purpose of use of its services than users' discipline. Regardless of discipline a good perceived provision of central resources led to a more frequent use of FinELib. The satisfaction with the services did not vary with the discipline, but with the perceived availability of resources.

Structurally triggered metal-insulator transition in rare-earth nickelates.

Science.gov (United States)

Mercy, Alain; Bieder, Jordan; Íñiguez, Jorge; Ghosez, Philippe

2017-11-22

Rare-earth nickelates form an intriguing series of correlated perovskite oxides. Apart from LaNiO 3 , they exhibit on cooling a sharp metal-insulator electronic phase transition, a concurrent structural phase transition, and a magnetic phase transition toward an unusual antiferromagnetic spin order. Appealing for various applications, full exploitation of these compounds is still hampered by the lack of global understanding of the interplay between their electronic, structural, and magnetic properties. Here we show from first-principles calculations that the metal-insulator transition of nickelates arises from the softening of an oxygen-breathing distortion, structurally triggered by oxygen-octahedra rotation motions. The origin of such a rare triggered mechanism is traced back in their electronic and magnetic properties, providing a united picture. We further develop a Landau model accounting for the metal-insulator transition evolution in terms of the rare-earth cations and rationalizing how to tune this transition by acting on oxygen rotation motions.

The Role of the Acquisitions Librarian in Electronic Resources Management

Science.gov (United States)

Pomerantz, Sarah B.

2010-01-01

With the ongoing shift to electronic formats for library resources, acquisitions librarians, like the rest of the profession, must adapt to the rapidly changing landscape of electronic resources by keeping up with trends and mastering new skills related to digital publishing, technology, and licensing. The author sought to know what roles…

Metal-insulator transition in vanadium dioxide

International Nuclear Information System (INIS)

Zylbersztejn, A.; Mott, N.F.

1975-01-01

The basic physical parameters which govern the metal-insulator transition in vanadium dioxide are determined through a review of the properties of this material. The major importance of the Hubbard intra-atomic correlation energy in determining the insulating phase, which was already evidence by studies of the magnetic properties of V 1 -/subx/Cr/subx/O 2 alloys, is further demonstrated from an analysis of their electrical properties. An analysis of the magnetic susceptibility of niobium-doped VO 2 yields a picture for the current carrier in the low-temperature phase in which it is accompanied by a spin cloud (owing to Hund's-rule coupling), and has therefore an enhanced mass (m approx. = 60m 0 ). Semiconducting vanadium dioxide turns out to be a borderline case for a classical band-transport description; in the alloys at high doping levels, Anderson localization with hopping transport can take place. Whereas it is shown that the insulating phase cannot be described correctly without taking into account the Hubbard correlation energy, we find that the properties of the metallic phase are mainly determined by the band structure. Metallic VO 2 is, in our view, similar to transition metals like Pt or Pd: electrons in a comparatively wide band screening out the interaction between the electrons in a narrow overlapping band. The magnetic susceptibility is described as exchange enhanced. The large density of states at the Fermi level yields a substantial contribution of the entropy of the metallic electrons to the latent heat. The crystalline distortion removes the band degeneracy so that the correlation energy becomes comparable with the band width and a metal-insulator transition takes place

Analysis of Pedagogic Potential of Electronic Educational Resources with Elements of Autodidactics

Directory of Open Access Journals (Sweden)

Igor A.

2018-03-01

Full Text Available Introduction: in recent years didactic properties of electronic educational resources undergo considerable changes, nevertheless, the question of studying of such complete phenomenon as “an electronic educational resource with autodidactics elements” remains open, despite sufficient scientific base of researches of the terms making this concept. Article purpose – determination of essence of electronic educational resources with autodidactics elements. Materials and Methods: the main method of research was the theoretical analysis of the pedagogical and psychological literature on the problem under study. We used the theoretical (analysis, synthesis, comparison and generalization methods, the method of interpretation, pedagogical modeling, and empirical methods (observation, testing, conversation, interview, analysis of students’ performance, pedagogical experiment, peer review. Results: we detected the advantages of electronic educational resources in comparison with traditional ones. The concept of autodidactics as applied to the subject of research is considered. Properties of electronic educational resources with a linear and nonlinear principle of construction are studied.The influence of the principle of construction on the development of the learners’ qualities is shown. We formulated an integral definition of electronic educational resources with elements of autodidactics, namely, the variability, adaptivity and cyclicity of training. A model of the teaching-learning process with electronic educational resources is developed. Discussion and Conclusions: further development of a problem will allow to define whether electronic educational resources with autodidactics elements pedagogical potential for realization of educational and self-educational activity of teachers have, to modify technological procedures taking into account age features of students, their specialties and features of the organization of process of training of

Preservation and conservation of electronic information resources of ...

African Journals Online (AJOL)

The major holdings of the broadcast libraries of the Nigerian Television Authority (NTA) are electronic information resources; therefore, providing safe places for general management of these resources have aroused interest in the industry in Nigeria for sometimes. The need to study the preservation and conservation of ...

Electronic correlations in insulators, metals and superconductors

Energy Technology Data Exchange (ETDEWEB)

Sentef, Michael Andreas

2010-12-03

In this thesis dynamical mean-field methods in combination with a continuous-time quantum Monte Carlo impurity solver are used to study selected open problems of condensed matter theory. These problems comprise the effect of correlations and their quantification in covalent band insulators, non-local correlation effects and their intriguing consequences in frustrated two-dimensional systems, and a phenomenological approach to investigate temperature-dependent transport in graphene in the presence of disorder. (orig.)

Electronic correlations in insulators, metals and superconductors

International Nuclear Information System (INIS)

Sentef, Michael Andreas

2010-01-01

In this thesis dynamical mean-field methods in combination with a continuous-time quantum Monte Carlo impurity solver are used to study selected open problems of condensed matter theory. These problems comprise the effect of correlations and their quantification in covalent band insulators, non-local correlation effects and their intriguing consequences in frustrated two-dimensional systems, and a phenomenological approach to investigate temperature-dependent transport in graphene in the presence of disorder. (orig.)

Thermal transport across metal–insulator interface via electron–phonon interaction

International Nuclear Information System (INIS)

Zhang, Lifa; Wang, Jian-Sheng; Li, Baowen; Lü, Jing-Tao

2013-01-01

The thermal transport across a metal–insulator interface can be characterized by electron–phonon interaction through which an electron lead is coupled to a phonon lead if phonon–phonon coupling at the interface is very weak. We investigate the thermal conductance and rectification between the electron part and the phonon part using the nonequilibrium Green’s function method. It is found that the thermal conductance has a nonmonotonic behavior as a function of average temperature or the coupling strength between the phonon leads in the metal part and the insulator part. The metal–insulator interface shows a clear thermal rectification effect, which can be reversed by a change in average temperature or the electron–phonon coupling. (paper)

Building an electronic resource collection a practical guide

CERN Document Server

Lee, Stuart D

2004-01-01

This practical book guides information professionals step-by-step through building and managing an electronic resource collection. It outlines the range of electronic products currently available in abstracting and indexing, bibliographic, and other services and then describes how to effectively select, evaluate and purchase them.

Analysis of Human Resources Management Strategy in China Electronic Commerce Enterprises

Science.gov (United States)

Shao, Fang

The paper discussed electronic-commerce's influence on enterprise human resources management, proposed and proved the human resources management strategy which electronic commerce enterprise should adopt from recruitment strategy to training strategy, keeping talent strategy and other ways.

Mott metal-insulator transition in the doped Hubbard-Holstein model

Science.gov (United States)

Kurdestany, Jamshid Moradi; Satpathy, S.

2017-08-01

Motivated by the current interest in the understanding of the Mott insulators away from half-filling, observed in many perovskite oxides, we study the Mott metal-insulator transition in the doped Hubbard-Holstein model using the Hartree-Fock mean field theory. The Hubbard-Holstein model is the simplest model containing both the Coulomb and the electron-lattice interactions, which are important ingredients in the physics of the perovskite oxides. In contrast to the half-filled Hubbard model, which always results in a single phase (either metallic or insulating), our results show that away from half-filling, a mixed phase of metallic and insulating regions occurs. As the dopant concentration is increased, the metallic part progressively grows in volume, until it exceeds the percolation threshold, leading to percolative conduction. This happens above a critical dopant concentration δc, which, depending on the strength of the electron-lattice interaction, can be a significant fraction of unity. This means that the material could be insulating even for a substantial amount of doping, in contrast to the expectation that doped holes would destroy the insulating behavior of the half-filled Hubbard model. While effects of fluctuation beyond the mean field remain an open question, our results provide a starting point for the understanding of the density-driven metal-insulator transition observed in many complex oxides.

Proximity effects in topological insulator heterostructures

International Nuclear Information System (INIS)

Li Xiao-Guang; Wu Guang-Fen; Zhang Gu-Feng; Culcer Dimitrie; Zhang Zhen-Yu; Chen Hua

2013-01-01

Topological insulators (TIs) are bulk insulators that possess robust helical conducting states along their interfaces with conventional insulators. A tremendous research effort has recently been devoted to Tl-based heterostructures, in which conventional proximity effects give rise to a series of exotic physical phenomena. This paper reviews our recent studies on the potential existence of topological proximity effects at the interface between a topological insulator and a normal insulator or other topologically trivial systems. Using first-principles approaches, we have realized the tunability of the vertical location of the topological helical state via intriguing dual-proximity effects. To further elucidate the control parameters of this effect, we have used the graphene-based heterostructures as prototypical systems to reveal a more complete phase diagram. On the application side of the topological helical states, we have presented a catalysis example, where the topological helical state plays an essential role in facilitating surface reactions by serving as an effective electron bath. These discoveries lay the foundation for accurate manipulation of the real space properties of the topological helical state in TI-based heterostructures and pave the way for realization of the salient functionality of topological insulators in future device applications. (topical review - low-dimensional nanostructures and devices)

Fermi surfaces in Kondo insulators

Science.gov (United States)

Liu, Hsu; Hartstein, Máté; Wallace, Gregory J.; Davies, Alexander J.; Ciomaga Hatnean, Monica; Johannes, Michelle D.; Shitsevalova, Natalya; Balakrishnan, Geetha; Sebastian, Suchitra E.

2018-04-01

We report magnetic quantum oscillations measured using torque magnetisation in the Kondo insulator YbB12 and discuss the potential origin of the underlying Fermi surface. Observed quantum oscillations as well as complementary quantities such as a finite linear specific heat capacity in YbB12 exhibit similarities with the Kondo insulator SmB6, yet also crucial differences. Small heavy Fermi sections are observed in YbB12 with similarities to the neighbouring heavy fermion semimetallic Fermi surface, in contrast to large light Fermi surface sections in SmB6 which are more similar to the conduction electron Fermi surface. A rich spectrum of theoretical models is suggested to explain the origin across different Kondo insulating families of a bulk Fermi surface potentially from novel itinerant quasiparticles that couple to magnetic fields, yet do not couple to weak DC electric fields.

Using XML Technologies to Organize Electronic Reference Resources

OpenAIRE

Huser, Vojtech; Del Fiol, Guilherme; Rocha, Roberto A.

2005-01-01

Provision of access to reference electronic resources to clinicians is becoming increasingly important. We have created a framework for librarians to manage access to these resources at an enterprise level, rather than at the individual hospital libraries. We describe initial project requirements, implementation details, and some preliminary results.

Electronic Resources and Mission Creep: Reorganizing the Library for the Twenty-First Century

Science.gov (United States)

Stachokas, George

2009-01-01

The position of electronic resources librarian was created to serve as a specialist in the negotiation of license agreements for electronic resources, but mission creep has added more functions to the routine work of electronic resources such as cataloging, gathering information for collection development, and technical support. As electronic…

1D numerical simulation of charge trapping in an insulator submitted to an electron beam irradiation. Part I: Computation of the initial secondary electron emission yield

International Nuclear Information System (INIS)

Aoufi, A.; Damamme, G.

2011-01-01

The aim of this work is to study by numerical simulation a mathematical modelling technique describing charge trapping during initial charge injection in an insulator submitted to electron beam irradiation. A two-fluxes method described by a set of two stationary transport equations is used to split the electron current j e (z) into coupled forward j e+ (z) and backward j e (z) currents and such that j e (z) = j e+ (z) - j e- (z). The sparse algebraic linear system, resulting from the vertex-centered finite-volume discretization scheme is solved by an iterative decoupled fixed point method which involves the direct inversion of a bi-diagonal matrix. The sensitivity of the initial secondary electron emission yield with respect to the energy of incident primary electrons beam, that is penetration depth of the incident beam, or electron cross sections (absorption and diffusion) is investigated by numerical simulations. (authors)

Peculiarities of electronic structure of silicon-on-insulator structures and their interaction with synchrotron radiation

Directory of Open Access Journals (Sweden)

Vladimir A. Terekhov

2015-09-01

Full Text Available SOI (silicon-on-insulator structures with strained and unstrained silicon layers were studied by ultrasoft X-ray emission spectroscopy and X-ray absorption near edge structure spectroscopy with the use of synchrotron radiation techniques. Analysis of X-ray data has shown a noticeable transformation of the electron energy spectrum and local partial density of states distribution in valence and conduction bands in the strained silicon layer of the SOI structure. USXES Si L2,3 spectra analysis revealed a decrease of the distance between the L2v′ и L1v points in the valence band of the strained silicon layer as well as a shift of the first two maxima of the XANES first derivation spectra to the higher energies with respect to conduction band bottom Ec. At the same time the X-ray standing waves of synchrotron radiation (λ~12–20 nm are formed in the silicon-on-insulator structure with and without strains of the silicon layer. Moreover changing the synchrotron radiation grazing angle θ by 2° leads to a change of the electromagnetic field phase to the opposite.

Impurity band Mott insulators: a new route to high Tc superconductivity

Directory of Open Access Journals (Sweden)

Ganapathy Baskaran

2008-01-01

Full Text Available Last century witnessed the birth of semiconductor electronics and nanotechnology. The physics behind these revolutionary developments is certain quantum mechanical behaviour of 'impurity state electrons' in crystalline 'band insulators', such as Si, Ge, GaAs and GaN, arising from intentionally added (doped impurities. The present article proposes that certain collective quantum behaviour of these impurity state electrons, arising from Coulomb repulsions, could lead to superconductivity in a parent band insulator, in a way not suspected before. Impurity band resonating valence bond theory of superconductivity in boron doped diamond, recently proposed by us, suggests possibility of superconductivity emerging from impurity band Mott insulators. We use certain key ideas and insights from the field of high-temperature superconductivity in cuprates and organics. Our suggestion also offers new possibilities in the field of semiconductor electronics and nanotechnology. The current level of sophistication in solid state technology and combinatorial materials science is very well capable of realizing our proposal and discover new superconductors.

Local Peltier-effect-induced reversible metal–insulator transition in VO2 nanowires

International Nuclear Information System (INIS)

Takami, Hidefumi; Kanki, Teruo; Tanaka, Hidekazu

2016-01-01

We report anomalous resistance leaps and drops in VO 2 nanowires with operating current density and direction, showing reversible and nonvolatile switching. This event is associated with the metal–insulator phase transition (MIT) of local nanodomains with coexistence states of metallic and insulating phases induced by thermoelectric cooling and heating effects. Because the interface of metal and insulator domains has much different Peltier coefficient, it is possible that a significant Peltier effect would be a source of the local MIT. This operation can be realized by one-dimensional domain configuration in VO 2 nanowires because one straight current path through the electronic domain-interface enables theoretical control of thermoelectric effects. This result will open a new method of reversible control of electronic states in correlated electron materials.

Creation of excitations and defects in insulating materials by high-current-density electron beams of nanosecond pulse duration

International Nuclear Information System (INIS)

Vaisburd, D.I.; Evdokimov, K.E.

2005-01-01

The paper is concerned with fast and ultra-fast processes in insulating materials under the irradiation by a high-current-density electron beam of a nanosecond pulse duration. The inflation process induced by the interaction of a high-intensity electron beam with a dielectric is examined. The ''instantaneous'' distribution of non-ionizing electrons and holes is one of the most important stages of the process. Ionization-passive electrons and holes make the main contribution to many fast processes with a characteristic time in the range 10 -14 /10 -12 s: high-energy conductivity, intraband luminescence, etc. A technique was developed for calculation of the ''instantaneous'' distribution of non-ionizing electrons and holes in a dielectric prior to electron-phonon relaxation. The following experimental effects are considered: intraband luminescence, coexistence of intraband electron luminescence and band-to-band hole luminescence in CsI, high energy conductivity; generation of mechanical fields and their interaction with cracks and dislocations. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

A ceramic radial insulation structure for a relativistic electron beam vacuum diode.

Science.gov (United States)

Xun, Tao; Yang, Hanwu; Zhang, Jiande; Liu, Zhenxiang; Wang, Yong; Zhao, Yansong

2008-06-01

For one kind of a high current diode composed of a small disk-type alumina ceramic insulator water/vacuum interface, the insulation structure was designed and experimentally investigated. According to the theories of vacuum flashover and the rules for radial insulators, a "cone-column" anode outline and the cathode shielding rings were adopted. The electrostatic field along the insulator surface was obtained by finite element analysis simulating. By adjusting the outline of the anode and reshaping the shielding rings, the electric fields were well distributed and the field around the cathode triple junction was effectively controlled. Area weighted statistical method was applied to estimate the surface breakdown field. In addition, the operating process of an accelerator based on a spiral pulse forming line (PFL) was simulated through the PSPICE software to get the waveform of charging and diode voltage. The high voltage test was carried out on a water dielectric spiral PFL accelerator with long pulse duration, and results show that the diode can work stably in 420 kV, 200 ns conditions. The experimental results agree with the theoretical and simulated results.

Electronic reconstruction at the interface between the Mott insulator LaVO{sub 3} and the band insulator SrTiO{sub 3}

Energy Technology Data Exchange (ETDEWEB)

Stuebinger, Martin; Gabel, Judith; Gagel, Philipp; Sing, Michael; Claessen, Ralph [Universitaet Wuerzburg, Physikalisches Institut and Roentgen Center for Complex Material Systems (RCCM), 97074 Wuerzburg (Germany)

2016-07-01

Akin to the well known oxide heterostructure LaAlO{sub 3}/SrTiO{sub 3} (LAO/STO) the formation of a conducting interface is found between the strongly correlated, polar Mott insulator LaV{sup 3+}O{sub 3} (LVO) and the non-polar band insulator STO. Since LaV{sup 3+}O{sub 3} tends to overoxidize to the thermodynamically more favourable LaV{sup 5+}O{sub 4} phase when exposed to air, a suitable passivation is required. Therefore, we have employed pulsed laser deposition thin film growth of LVO films with a crystalline LAO capping layer. In situ photoemission measurements of samples before and after being exposed to air show that the V oxidation state can indeed be stabilized by the LAO capping layer. By transport measurements, we identify an insulator-to-metal transition at a combined LAO/LVO overlayer thickness of 4 to 5 unit cells. With LVO being a Mott insulator, passivation by the LAO capping opens the opportunity to study a band-filling controlled Mott insulator to metal transition induced by a purely electrostatic mechanism without interfering overoxidation of the LVO film.

Effects of Structural and Electronic Disorder in Topological Insulator Sb2Te3 Thin Films

Science.gov (United States)

Korzhovska, Inna

Topological quantum matter is a unique and potentially transformative protectorate against disorder-induced backscattering. The ultimate disorder limits to the topological state, however, are still not known - understanding these limits is critical to potential applications in the fields of spintronics and information processing. In topological insulators spin-orbit interaction and time-reversal-symmetry invariance guarantees - at least up to a certain disorder strength - that charge transport through 2D gapless Dirac surface states is robust against backscattering by non-magnetic disorder. Strong disorder may destroy topological protection and gap out Dirac surface states, although recent theories predict that under severe electronic disorder a quantized topological conductance might yet reemerge. Very strong electronic disorder, however, is not trivial to install and quantify, and topological matter under such conditions thus far has not been experimentally tested. This thesis addresses the behavior of three-dimensional (3D) topological insulator (TI) films in a wide range of structural and electronic disorder. We establish strong positional disorder in thin (20-50 nm) Sb2Te 3 films, free of extrinsic magnetic dopants. Sb 2Te3 is a known 2nd generation topological insulator in the low-disorder crystalline state. It is also a known phase-change material that undergoes insulator-to-metal transition with the concurrent orders of magnitude resistive drop, where a huge range of disorder could be controllably explored. In this work we show that even in the absence of magnetic dopants, disorder may induce spin correlations detrimental to the topological state. Chapter 1 contains a brief introduction to the topological matter and describes the role played by disorder. This is followed by theory considerations and a survey of prior experimental work. Next we describe the motivation for our experiments and explain the choice of the material. Chapter 2 describes deposition

Quantum criticality around metal-insulator transitions of strongly correlated electron systems

Science.gov (United States)

Misawa, Takahiro; Imada, Masatoshi

2007-03-01

Quantum criticality of metal-insulator transitions in correlated electron systems is shown to belong to an unconventional universality class with violation of the Ginzburg-Landau-Wilson (GLW) scheme formulated for symmetry breaking transitions. This unconventionality arises from an emergent character of the quantum critical point, which appears at the marginal point between the Ising-type symmetry breaking at nonzero temperatures and the topological transition of the Fermi surface at zero temperature. We show that Hartree-Fock approximations of an extended Hubbard model on square lattices are capable of such metal-insulator transitions with unusual criticality under a preexisting symmetry breaking. The obtained universality is consistent with the scaling theory formulated for Mott transitions and with a number of numerical results beyond the mean-field level, implying that preexisting symmetry breaking is not necessarily required for the emergence of this unconventional universality. Examinations of fluctuation effects indicate that the obtained critical exponents remain essentially exact beyond the mean-field level. It further clarifies the whole structure of singularities by a unified treatment of the bandwidth-control and filling-control transitions. Detailed analyses of the criticality, containing diverging carrier density fluctuations around the marginal quantum critical point, are presented from microscopic calculations and reveal the nature as quantum critical “opalescence.” The mechanism of emerging marginal quantum critical point is ascribed to a positive feedback and interplay between the preexisting gap formation present even in metals and kinetic energy gain (loss) of the metallic carrier. Analyses of crossovers between GLW type at nonzero temperature and topological type at zero temperature show that the critical exponents observed in (V,Cr)2O3 and κ-ET -type organic conductors provide us with evidence for the existence of the present marginal

Magnetic gating of a 2D topological insulator

Science.gov (United States)

Dang, Xiaoqian; Burton, J. D.; Tsymbal, Evgeny Y.

2016-09-01

Deterministic control of transport properties through manipulation of spin states is one of the paradigms of spintronics. Topological insulators offer a new playground for exploring interesting spin-dependent phenomena. Here, we consider a ferromagnetic ‘gate’ representing a magnetic adatom coupled to the topologically protected edge state of a two-dimensional (2D) topological insulator to modulate the electron transmission of the edge state. Due to the locked spin and wave vector of the transport electrons the transmission across the magnetic gate depends on the mutual orientation of the adatom magnetic moment and the current. If the Fermi energy matches an exchange-split bound state of the adatom, the electron transmission can be blocked due to the full back scattering of the incident wave. This antiresonance behavior is controlled by the adatom magnetic moment orientation so that the transmission of the edge state can be changed from 1 to 0. Expanding this consideration to a ferromagnetic gate representing a 1D chain of atoms shows a possibility to control the spin-dependent current of a strip of a 2D topological insulator by magnetization orientation of the ferromagnetic gate.

Electronic Resources Management System: Recommendation Report 2017

KAUST Repository

Ramli, Rindra M.

2017-01-01

This recommendation report provides an overview of the selection process for the new Electronic Resources Management System. The library has decided to move away from Innovative Interfaces Millennium ERM module. The library reviewed 3 system

Insulating materials from renewable raw materials. 4. ed.; Daemmstoffe aus nachwachsenden Rohstoffen

Energy Technology Data Exchange (ETDEWEB)

Brandhorst, Joerg; Spritzendorfer, Josef; Gildhorn, Kai; Hemp, Markus

2012-03-27

The thermal insulation has become a central issue in the construction and renovation of buildings. The question of healthy building materials and appropriate construction follows the desire of a comfartable and allergy-free living. Due to these developments, insulation materials from renewable resources increasingly has raised the consciousness. The brochure under consideration describes the dynamic market of insulation materials consisting of renewable raw materials. Wood fibers, wood wool, sheep wool, flax, hemp, reeds, meadow grass, cork, cellulose, seaweed and bulrushes are considered as renewable raw materials for insulating materials.

Improved DC Gun Insulator Assembly

International Nuclear Information System (INIS)

Neubauer, M.L.; Dudas, A.; Sah, R.; Poelker, M.; Surles-Law, K.E.L.

2010-01-01

Many user facilities such as synchrotron radiation light sources and free electron lasers require accelerating structures that support electric fields of 10-100 MV/m, especially at the start of the accelerator chain where ceramic insulators are used for very high gradient DC guns. These insulators are difficult to manufacture, require long commissioning times, and often exhibit poor reliability. Two technical approaches to solving this problem will be investigated. Firstly, inverted ceramics offer solutions for reduced gradients between the electrodes and ground. An inverted design will be presented for 350 kV, with maximum gradients in the range of 5-10 MV/m. Secondly, novel ceramic manufacturing processes will be studied, in order to protect triple junction locations from emission, by applying a coating with a bulk resistivity. The processes for creating this coating will be optimized to provide protection as well as be used to coat a ceramic with an appropriate gradient in bulk resistivity from the vacuum side to the air side of an HV standoff ceramic cylinder. Example insulator designs are being computer modelled, and insulator samples are being manufactured and tested

Electronic Structure of the Pyrochlore-Type Ru Oxides through the Metal--Insulator Transition

International Nuclear Information System (INIS)

Okamoto, J.; Fujimori, S.I.; Okane, T.; Fujimori, A.; Abbate, M.; Yoshii, S.; Sato, M.

2003-01-01

The electronic structures of the pyrochlore-type Ru oxides Sm 2-x Ca x Ru 2 O 7 and Sm 2-x Bi x Ru 2 O 7 , which show metal-insulator transition with increasing Ca or Bi concentration, have been studied by ultraviolet photoemission spectroscopy. Spectral changes near the Fermi level are different but reflect the tendency of their transport properties in both systems. The Sm 2-x Ca x Ru 2 O 7 system shows an energy shift, which is expected from the increase of hole in the Ru 4d t 2g band and the Sm 2 - x Bi x Ru 2 O 7 system shows spectral weight transfer within the Ru 4d t 2g band, which is expected to be observed in bandwidth-control Mott-Hubbard system. (author)

The Internet School of Medicine: use of electronic resources by medical trainees and the reliability of those resources.

Science.gov (United States)

Egle, Jonathan P; Smeenge, David M; Kassem, Kamal M; Mittal, Vijay K

2015-01-01

Electronic sources of medical information are plentiful, and numerous studies have demonstrated the use of the Internet by patients and the variable reliability of these sources. Studies have investigated neither the use of web-based resources by residents, nor the reliability of the information available on these websites. A web-based survey was distributed to surgical residents in Michigan and third- and fourth-year medical students at an American allopathic and osteopathic medical school and a Caribbean allopathic school regarding their preferred sources of medical information in various situations. A set of 254 queries simulating those faced by medical trainees on rounds, on a written examination, or during patient care was developed. The top 5 electronic resources cited by the trainees were evaluated for their ability to answer these questions accurately, using standard textbooks as the point of reference. The respondents reported a wide variety of overall preferred resources. Most of the 73 responding medical trainees favored textbooks or board review books for prolonged studying, but electronic resources are frequently used for quick studying, clinical decision-making questions, and medication queries. The most commonly used electronic resources were UpToDate, Google, Medscape, Wikipedia, and Epocrates. UpToDate and Epocrates had the highest percentage of correct answers (47%) and Wikipedia had the lowest (26%). Epocrates also had the highest percentage of wrong answers (30%), whereas Google had the lowest percentage (18%). All resources had a significant number of questions that they were unable to answer. Though hardcopy books have not been completely replaced by electronic resources, more than half of medical students and nearly half of residents prefer web-based sources of information. For quick questions and studying, both groups prefer Internet sources. However, the most commonly used electronic resources fail to answer clinical queries more than half

Topological insulators and topological superconductors

CERN Document Server

Bernevig, Andrei B

2013-01-01

This graduate-level textbook is the first pedagogical synthesis of the field of topological insulators and superconductors, one of the most exciting areas of research in condensed matter physics. Presenting the latest developments, while providing all the calculations necessary for a self-contained and complete description of the discipline, it is ideal for graduate students and researchers preparing to work in this area, and it will be an essential reference both within and outside the classroom. The book begins with simple concepts such as Berry phases, Dirac fermions, Hall conductance and its link to topology, and the Hofstadter problem of lattice electrons in a magnetic field. It moves on to explain topological phases of matter such as Chern insulators, two- and three-dimensional topological insulators, and Majorana p-wave wires. Additionally, the book covers zero modes on vortices in topological superconductors, time-reversal topological superconductors, and topological responses/field theory and topolo...

ANALYTICAL REVIEW OF ELECTRONIC RESOURCES FOR THE STUDY OF LATIN

Directory of Open Access Journals (Sweden)

Olena Yu. Balalaieva

2014-04-01

Full Text Available The article investigates the current state of development of e-learning content in the Latin language. It is noted that the introduction of ICT in the educational space has expanded the possibility of studying Latin, opened access to digital libraries resources, made it possible to use scientific and educational potential and teaching Latin best practices of world's leading universities. A review of foreign and Ukrainian information resources and electronic editions for the study of Latin is given. Much attention was paid to the didactic potential of local and online multimedia courses of Latin, electronic textbooks, workbooks of interactive tests and exercises, various dictionaries and software translators, databases and digital libraries. Based on analysis of the world market of educational services and products the main trends in the development of information resources and electronic books are examined. It was found that multimedia courses with interactive exercises or workbooks with interactive tests, online dictionaries and translators are the most widely represented and demanded. The noticeable lagging of Ukrainian education and computer linguistics in quantitative and qualitative measures in this industry is established. The obvious drawback of existing Ukrainian resources and electronic editions for the study of Latin is their noninteractive nature. The prospects of e-learning content in Latin in Ukraine are outlined.

Nanometric holograms based on a topological insulator material.

Science.gov (United States)

Yue, Zengji; Xue, Gaolei; Liu, Juan; Wang, Yongtian; Gu, Min

2017-05-18

Holography has extremely extensive applications in conventional optical instruments spanning optical microscopy and imaging, three-dimensional displays and metrology. To integrate holography with modern low-dimensional electronic devices, holograms need to be thinned to a nanometric scale. However, to keep a pronounced phase shift modulation, the thickness of holograms has been generally limited to the optical wavelength scale, which hinders their integration with ultrathin electronic devices. Here, we break this limit and achieve 60 nm holograms using a topological insulator material. We discover that nanometric topological insulator thin films act as an intrinsic optical resonant cavity due to the unequal refractive indices in their metallic surfaces and bulk. The resonant cavity leads to enhancement of phase shifts and thus the holographic imaging. Our work paves a way towards integrating holography with flat electronic devices for optical imaging, data storage and information security.

Elektronik Bilgi Kaynaklarının Seçimi / Selection of Electronic Information Resources

Directory of Open Access Journals (Sweden)

Pınar Al

2003-04-01

Full Text Available For many years, library users have used only from the printed media in order to get the information that they have needed. Today with the widespread use of the Web and the addition of electronic information resources to library collections, the use of information in the electronic environment as well as in printed media is started to be used. In time, such types of information resources as, electronic journals, electronic books, electronic encyclopedias, electronic dictionaries and electronic theses have been added to library collections. In this study, selection criteria that can be used for electronic information resources are discussed and suggestions are provided for libraries that try to select electronic information resources for their collections.

Access to electronic resources by visually impaired people

Directory of Open Access Journals (Sweden)

Jenny Craven

2003-01-01

Full Text Available Research into access to electronic resources by visually impaired people undertaken by the Centre for Research in Library and Information Management has not only explored the accessibility of websites and levels of awareness in providing websites that adhere to design for all principles, but has sought to enhance understanding of information seeking behaviour of blind and visually impaired people when using digital resources.

Trapping in GaN-based metal-insulator-semiconductor transistors: Role of high drain bias and hot electrons

Energy Technology Data Exchange (ETDEWEB)

Meneghini, M., E-mail: matteo.meneghini@dei.unipd.it; Bisi, D.; Meneghesso, G.; Zanoni, E. [Department of Information Engineering, University of Padova, via Gradenigo 6/B, 35131 Padova (Italy); Marcon, D.; Stoffels, S.; Van Hove, M.; Wu, T.-L.; Decoutere, S. [IMEC, Kapeldreef 75, 3001 Heverlee (Belgium)

2014-04-07

This paper describes an extensive analysis of the role of off-state and semi-on state bias in inducing the trapping in GaN-based power High Electron Mobility Transistors. The study is based on combined pulsed characterization and on-resistance transient measurements. We demonstrate that—by changing the quiescent bias point from the off-state to the semi-on state—it is possible to separately analyze two relevant trapping mechanisms: (i) the trapping of electrons in the gate-drain access region, activated by the exposure to high drain bias in the off-state; (ii) the trapping of hot-electrons within the AlGaN barrier or the gate insulator, which occurs when the devices are operated in the semi-on state. The dependence of these two mechanisms on the bias conditions and on temperature, and the properties (activation energy and cross section) of the related traps are described in the text.

Variable range hopping in TiO2 insulating layers for oxide electronic devices

Directory of Open Access Journals (Sweden)

Y. L. Zhao

2012-03-01

Full Text Available TiO2 thin films are of importance in oxide electronics, e.g., Pt/TiO2/Pt for memristors and Co-TiO2/TiO2/Co-TiO2 for spin tunneling devices. When such structures are deposited at a variety of oxygen pressures, how does TiO2 behave as an insulator? We report the discovery of an anomalous resistivity minimum in a TiO2 film at low pressure (not strongly dependent on deposition temperature. Hall measurements rule out band transport and in most of the pressure range the transport is variable range hopping (VRH though below 20 K it was difficult to differentiate between Mott and Efros-Shklovskii's (ES mechanism. Magnetoresistance (MR of the sample with lowest resistivity was positive at low temperature (for VRH but negative above 10 K indicating quantum interference effects.

Library training to promote electronic resource usage

DEFF Research Database (Denmark)

Frandsen, Tove Faber; Tibyampansha, Dativa; Ibrahim, Glory

2017-01-01

Purpose: Increasing the usage of electronic resources is an issue of concern for many libraries all over the world. Several studies stress the importance of information literacy and instruction in order to increase the usage. Design/methodology/approach: The present article presents the results...

Why and How to Measure the Use of Electronic Resources

Directory of Open Access Journals (Sweden)

Jean Bernon

2008-11-01

Full Text Available A complete overview of library activity implies a complete and reliable measurement of the use of both electronic resources and printed materials. This measurement is based on three sets of definitions: document types, use types and user types. There is a common model of definitions for printed materials, but a lot of questions and technical issues remain for electronic resources. In 2006 a French national working group studied these questions. It relied on the COUNTER standard, but found it insufficient and pointed out the need for local tools such as web markers and deep analysis of proxy logs. Within the French national consortium COUPERIN, a new working group is testing ERMS, SUSHI standards, Shibboleth authentication, along with COUNTER standards, to improve the counting of the electronic resources use. At this stage this counting is insufficient and its improvement will be a European challenge for the future.

Local Peltier-effect-induced reversible metal–insulator transition in VO{sub 2} nanowires

Energy Technology Data Exchange (ETDEWEB)

Takami, Hidefumi; Kanki, Teruo, E-mail: kanki@sanken.osaka-u.ac.jp, E-mail: h-tanaka@sanken.osaka-u.ac.jp; Tanaka, Hidekazu, E-mail: kanki@sanken.osaka-u.ac.jp, E-mail: h-tanaka@sanken.osaka-u.ac.jp [Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047 (Japan)

2016-06-15

We report anomalous resistance leaps and drops in VO{sub 2} nanowires with operating current density and direction, showing reversible and nonvolatile switching. This event is associated with the metal–insulator phase transition (MIT) of local nanodomains with coexistence states of metallic and insulating phases induced by thermoelectric cooling and heating effects. Because the interface of metal and insulator domains has much different Peltier coefficient, it is possible that a significant Peltier effect would be a source of the local MIT. This operation can be realized by one-dimensional domain configuration in VO{sub 2} nanowires because one straight current path through the electronic domain-interface enables theoretical control of thermoelectric effects. This result will open a new method of reversible control of electronic states in correlated electron materials.

Two-order parameters theory of the metal-insulator phase transition kinetics in the magnetic field

Science.gov (United States)

Dubovskii, L. B.

2018-05-01

The metal-insulator phase transition is considered within the framework of the Ginzburg-Landau approach for the phase transition described with two coupled order parameters. One of the order parameters is the mass density which variation is responsible for the origin of nonzero overlapping of the two different electron bands and the appearance of free electron carriers. This transition is assumed to be a first-order phase one. The free electron carriers are described with the vector-function representing the second-order parameter responsible for the continuous phase transition. This order parameter determines mostly the physical properties of the metal-insulator transition and leads to a singularity of the surface tension at the metal-insulator interface. The magnetic field is involved into the consideration of the system. The magnetic field leads to new singularities of the surface tension at the metal-insulator interface and results in a drastic variation of the phase transition kinetics. A strong singularity in the surface tension results from the Landau diamagnetism and determines anomalous features of the metal-insulator transition kinetics.

Transport of electric charge in insulators

International Nuclear Information System (INIS)

Lopez C, E.

1979-01-01

In this work a review is made of important concepts in the study of the transport of electric charge in insulators. These concepts are: electrical contacts, transport regimes as viewed in the I-V characteristics, and photoinjection processes by internal photemission of holes or electrons from metals or semiconductors into insulators or by a virtual electrode using strongly absorbed light. Experimental results of photoinjection of holes and electrons into sulfur single crystals are analyzed using these concepts. The observation of the Mott-Gurney transition is reported for the first time. This is the transition between the region of space charge limited currents (SCLC) and the region of saturation of the current as a function of the applied voltage. A modified Mott-Gurney theoretical model is presented that is able to explain the whole I-V characteristic for uv and the internal photoemission of hopes and uv photoinjection of electrons. For the case of internal photoemission of electrons the conventional space charge limited current theory for an exponential distribution of traps is able to explain the experimental data. It is found that the crystals are of high purity since the total density of traps, as calculated from their exponential distribution, is Nsub(t) equals 1.8 X 10 14 cm -3 . (author)

DYNAMICS MODEL OF MOISTURE IN PAPER INSULATION-TRANSFORMER OIL SYSTEM IN NON-STATIONARY THERMAL MODES OF THE POWER TRANSFORMER

Directory of Open Access Journals (Sweden)

V.V. Vasilevskij

2016-06-01

Full Text Available Introduction. An important problem in power transformers resource prognosis is the formation of moisture dynamics trends of transformer insulation. Purpose. Increasing the accuracy of power transformer insulation resource assessment based on accounting of moisture dynamics in interrelation with temperature dynamics. Working out of moisture dynamics model in paper insulation-transformer oil system in conjunction with thermodynamic model, load model and technical maintenance model. Methodology. The mathematical models used for describe the moisture dynamics are grounded on nonlinear differential equations. Interrelation moisture dynamics model with thermodynamic, load and technical maintenance models described by UML model. For confirming the adequacy of model used computer simulation. Results. We have implemented the model of moisture dynamics in power transformers insulation in interrelation with other models, which describe the state of power transformer in operation. The proposed model allows us to form detailed trends of moisture dynamics in power transformers insulation basing on monitoring data or power transformers operational factors simulation results. We have performed computer simulation of moisture exchange processes and calculation of transformer insulation resource for different moisture trends. Originality. The offered model takes into account moisture dynamics in power transformers insulation under the influence of changes of the power transformers thermal mode and operational factors. Practical value. The offered model can be used in power transformers monitoring systems for automation of resource assessment of oil-immersed power transformers paper insulation at different phase of lifecycle. Model also can be used for assessment of projected economic efficiency of power transformers exploitation in projected operating conditions.

Impact of lattice strain on the tunnel magnetoresistance in Fe/insulator/Fe and Fe/insulator/La0.67Sr0.33MnO3 magnetic tunnel junctions

KAUST Repository

Useinov, Arthur

2013-08-19

The objective of this work is to describe the tunnel electron current in single-barrier magnetic tunnel junctions within an approach that goes beyond the single-band transport model. We propose a ballistic multichannel electron transport model that can explain the influence of in-plane lattice strain on the tunnel magnetoresistance as well as the asymmetric voltage behavior. We consider as an example single-crystal magnetic Fe(110) electrodes for Fe/insulator/Fe and Fe/insulator/La0.67Sr0.33MnO3 tunnel junctions, where the electronic band structures of Fe and La0.67Sr0.33MnO3 are derived by ab initio calculations.

Impact of lattice strain on the tunnel magnetoresistance in Fe/insulator/Fe and Fe/insulator/La0.67Sr0.33MnO3 magnetic tunnel junctions

KAUST Repository

Useinov, Arthur; Saeed, Yasir; Schwingenschlö gl, Udo; Singh, Nirpendra; Useinov, N.

2013-01-01

The objective of this work is to describe the tunnel electron current in single-barrier magnetic tunnel junctions within an approach that goes beyond the single-band transport model. We propose a ballistic multichannel electron transport model that can explain the influence of in-plane lattice strain on the tunnel magnetoresistance as well as the asymmetric voltage behavior. We consider as an example single-crystal magnetic Fe(110) electrodes for Fe/insulator/Fe and Fe/insulator/La0.67Sr0.33MnO3 tunnel junctions, where the electronic band structures of Fe and La0.67Sr0.33MnO3 are derived by ab initio calculations.

Manufacture of axially insulated large-area diodes

International Nuclear Information System (INIS)

Ma Weiyi; Zhou Kungang; Wang Youtian; Zhang Dong; Shan Yusheng; Wang Naiyan

1999-01-01

The author describes the design and construction of the axially insulated large-area diodes used in the 'Heaven-1'. The four axially insulated large-area diodes are connected to the 10 ohm pulse transmission lines via the vacuum feed through tubes. The experimental results with the diodes are given. The diodes can steadily work at the voltage of 650 kV, and the diode current density is about 80 A per cm 2 with a pulse width of 220 ns. The electron beams with a total energy of 25 kJ are obtained

Topological Field Theory of Time-Reversal Invariant Insulators

Energy Technology Data Exchange (ETDEWEB)

Qi, Xiao-Liang; Hughes, Taylor; Zhang, Shou-Cheng; /Stanford U., Phys. Dept.

2010-03-19

We show that the fundamental time reversal invariant (TRI) insulator exists in 4 + 1 dimensions, where the effective field theory is described by the 4 + 1 dimensional Chern-Simons theory and the topological properties of the electronic structure is classified by the second Chern number. These topological properties are the natural generalizations of the time reversal breaking (TRB) quantum Hall insulator in 2 + 1 dimensions. The TRI quantum spin Hall insulator in 2 + 1 dimensions and the topological insulator in 3 + 1 dimension can be obtained as descendants from the fundamental TRI insulator in 4 + 1 dimensions through a dimensional reduction procedure. The effective topological field theory, and the Z{sub 2} topological classification for the TRI insulators in 2+1 and 3+1 dimensions are naturally obtained from this procedure. All physically measurable topological response functions of the TRI insulators are completely described by the effective topological field theory. Our effective topological field theory predicts a number of novel and measurable phenomena, the most striking of which is the topological magneto-electric effect, where an electric field generates a magnetic field in the same direction, with an universal constant of proportionality quantized in odd multiples of the fine structure constant {alpha} = e{sup 2}/hc. Finally, we present a general classification of all topological insulators in various dimensions, and describe them in terms of a unified topological Chern-Simons field theory in phase space.

Euler European Libraries and Electronic Resources in Mathematical Sciences

CERN Document Server

The Euler Project. Karlsruhe

The European Libraries and Electronic Resources (EULER) Project in Mathematical Sciences provides the EulerService site for searching out "mathematical resources such as books, pre-prints, web-pages, abstracts, proceedings, serials, technical reports preprints) and NetLab (for Internet resources), this outstanding engine is capable of simple, full, and refined searches. It also offers a browse option, which responds to entries in the author, keyword, and title fields. Further information about the Project is provided at the EULER homepage.

Individual Magnetic Molecules on Ultrathin Insulating Surfaces

Science.gov (United States)

El Hallak, Fadi; Warner, Ben; Hirjibehedin, Cyrus

2012-02-01

Single molecule magnets have attracted ample interest because of their exciting magnetic and quantum properties. Recent studies have demonstrated that some of these molecules can be evaporated on surfaces without losing their magnetic properties [M. Mannini et al., Nature 468, 417, (2010)]. This remarkable progress enhances the chances of real world applications for these molecules. We present STM imaging and spectroscopy data on iron phthalocyanine molecules deposited on Cu(100) and on a Cu2N ultrathin insulating surface. These molecules have been shown to display a large magnetic anisotropy on another thin insulating surface, oxidized Cu(110) [N. Tsukahara et al., Phys. Rev. Lett. 102, 167203 (2009)]. By using a combination of elastic and inelastic electron tunnelling spectroscopy, we investigate the binding of the molecules to the surface and the impact that the surface has on their electronic and magnetic properties.

Effects of Electronic Information Resources Skills Training for Lecturers on Pedagogical Practices and Research Productivity

Science.gov (United States)

Bhukuvhani, Crispen; Chiparausha, Blessing; Zuvalinyenga, Dorcas

2012-01-01

Lecturers use various electronic resources at different frequencies. The university library's information literacy skills workshops and seminars are the main sources of knowledge of accessing electronic resources. The use of electronic resources can be said to have positively affected lecturers' pedagogical practices and their work in general. The…

Characteristics of high gradient insulators for accelerator and high power flow applications

International Nuclear Information System (INIS)

Elizondo, J.M.; Krogh, M.L.; Smith, D.

1997-07-01

The high gradient insulator has been demonstrated to operate at levels comparable or better than special geometry or coated insulators. Some patented insulator configurations allow for sophisticated accelerator structures, high power flow interfaces, and microwave applications not previously possible. Sophisticated manufacturing techniques available at AlliedSignal FM and T made this development possible. Bipolar and high power flow applications are specially suited for present insulator designs. The insulator shows a beneficial effect when used under RF fields or RF structures. These insulators can be designed, to a first approximation, from simple electron flight path equations. With a recently developed model of surface flashover physics the authors completed a set of design calculations that include effects such as layer density and dielectric/metal thickness. Experimental data, obtained in the last few years of development, is presented and reviewed. Several insulator fabrication characteristics, indicating critical design parameters, are also presented

Characteristics of a cold cathode electron source combined with secondary electron emission in a FED

International Nuclear Information System (INIS)

Lei Wei; Zhang Xiaobing; Zhou Xuedong; Zhu Zuoya; Lou Chaogang; Zhao Hongping

2005-01-01

In electron beam devices, the voltage applied to the cathode (w.r.t. grid voltage) provides the initial energy for the electrons. Based on the type of electron emission, the electron sources are (mainly) classified into thermionic cathodes and cold cathodes. The power consumption of a cold cathode is smaller than that of a thermionic cathode. The delay time of the electron emission from a cold cathode following the voltage rise is also smaller. In cathode ray tubes, field emission display (=FED) panels and other devices, the electron current emitted from the cathode needs to be modulated. Since the strong electric field, which is required to extract electrons from the cold cathode, accelerates the electrons to a high velocity near the gate electrode, the required voltage swing for the current modulation is also high. The design of the driving circuit becomes quite difficult and expensive for a high driving voltage. In this paper, an insulator plate with holes is placed in front of a cold cathode. When the primary electrons hit the surface of the insulator tunnels, secondary electrons are generated. In this paper, the characteristics of the secondary electrons emitted from the gate structure are studied. Because the energies of the secondary electrons are smaller than that of the primary electron, the driving voltage for the current modulation is decreased by the introduction of the insulator tunnels, resulting in an improved energy uniformity of the electron beam. Triode structures with inclined insulator tunnels and with double insulator plates are also fabricated and lead to further improvements in the energy uniformity. The improved energy uniformity predicted by the simulation calculations is demonstrated by the improved brightness uniformity in the screen display images

Magnetic states, correlation effects and metal-insulator transition in FCC lattice

Science.gov (United States)

Timirgazin, M. A.; Igoshev, P. A.; Arzhnikov, A. K.; Irkhin, V. Yu

2016-12-01

The ground-state magnetic phase diagram (including collinear and spiral states) of the single-band Hubbard model for the face-centered cubic lattice and related metal-insulator transition (MIT) are investigated within the slave-boson approach by Kotliar and Ruckenstein. The correlation-induced electron spectrum narrowing and a comparison with a generalized Hartree-Fock approximation allow one to estimate the strength of correlation effects. This, as well as the MIT scenario, depends dramatically on the ratio of the next-nearest and nearest electron hopping integrals {{t}\\prime}/t . In contrast with metallic state, possessing substantial band narrowing, insulator one is only weakly correlated. The magnetic (Slater) scenario of MIT is found to be superior over the Mott one. Unlike simple and body-centered cubic lattices, MIT is the first order transition (discontinuous) for most {{t}\\prime}/t . The insulator state is type-II or type-III antiferromagnet, and the metallic state is spin-spiral, collinear antiferromagnet or paramagnet depending on {{t}\\prime}/t . The picture of magnetic ordering is compared with that in the standard localized-electron (Heisenberg) model.

Weakly interacting topological insulators: Quantum criticality and the renormalization group approach

Science.gov (United States)

Chen, Wei

2018-03-01

For D -dimensional weakly interacting topological insulators in certain symmetry classes, the topological invariant can be calculated from a D - or (D +1 ) -dimensional integration over a certain curvature function that is expressed in terms of single-particle Green's functions. Based on the divergence of curvature function at the topological phase transition, we demonstrate how a renormalization group approach circumvents these integrations and reduces the necessary calculation to that for the Green's function alone, rendering a numerically efficient tool to identify topological phase transitions in a large parameter space. The method further unveils a number of statistical aspects related to the quantum criticality in weakly interacting topological insulators, including correlation function, critical exponents, and scaling laws, that can be used to characterize the topological phase transitions driven by either interacting or noninteracting parameters. We use 1D class BDI and 2D class A Dirac models with electron-electron and electron-phonon interactions to demonstrate these principles and find that interactions may change the critical exponents of the topological insulators.

Metal-insulator transition induced in CaVO3 thin films

International Nuclear Information System (INIS)

Gu Man; Laverock, Jude; Chen, Bo; Smith, Kevin E.; Wolf, Stuart A.; Lu Jiwei

2013-01-01

Stoichiometric CaVO 3 (CVO) thin films of various thicknesses were grown on single crystal SrTiO 3 (STO) (001) substrates using a pulsed electron-beam deposition technique. The CVO films were capped with a 2.5 nm STO layer. We observed a temperature driven metal-insulator transition (MIT) in CVO films with thicknesses below 4 nm that was not observed in either thick CVO films or STO films. The emergence of this MIT can be attributed to the reduction in effective bandwidth due to a crossover from a three-dimensional metal to a two-dimensional insulator. The insulating phase was only induced with a drive current below 0.1 μA. X-ray absorption measurements indicated different electronic structures for thick and very thin films of CVO. Compared with the thick film (∼60 nm), thin films of CVO (2–4 nm) were more two-dimensional with the V charge state closer to V 4+ .

Raman Scattering as a Probe of the Magnetic State of BEDT-TTF Based Mott Insulators

Directory of Open Access Journals (Sweden)

Nora Hassan

2018-05-01

Full Text Available Quasi-two-dimensional Mott insulators based on BEDT-TTF molecules have recently demonstrated a variety of exotic states, which originate from electron–electron correlations and geometrical frustration of the lattice. Among those states are a triangular S = 1/2 spin liquid and quantum dipole liquid. In this article, we show the power of Raman scattering technique to characterize magnetic and electronic excitations of these states. Our results demonstrate a distinction between a spectrum of magnetic excitations in a simple Mott insulator with antiferromagnetic interactions, and a spectrum of an insulator with an additional on-site charge degree of freedom.

Electronic Commerce Resource Centers. An Industry--University Partnership.

Science.gov (United States)

Gulledge, Thomas R.; Sommer, Rainer; Tarimcilar, M. Murat

1999-01-01

Electronic Commerce Resource Centers focus on transferring emerging technologies to small businesses through university/industry partnerships. Successful implementation hinges on a strategic operating plan, creation of measurable value for customers, investment in customer-targeted training, and measurement of performance outputs. (SK)

A Review of Irradiation Effects on Organic-Matrix Insulation

International Nuclear Information System (INIS)

Simon, N.J.

1993-01-01

This review assesses the data base on epoxy and polyimide matrix insulation to determine whether organic electric insulation systems can be used in the toroidal field (TF) magnets of next generation fusion devices such as ITER* and TPX*. Owing to the difficulties of testing insulation under fusion reactor conditions, there is a considerable mismatch between the ITER requirements and the data that are currently available. For example, nearly all of the high-dose (5 x 10 7 to 10 8 Gy) data obtained on epoxy and polyimide matrix insulation employed gamma irradiation, electron irradiation, or reactor irradiation with a fast neutron fluence far below 10 23 /m 2 , the fluence expected for the insulation at the TF magnets, as set forth in ITER conceptual design documents. Also, the neutron spectrum did not contain a very high energy (E (ge) 5 MeV) component. Such data underestimate the actual damage that would be obtained with the neutron fluence and spectrum expected at a TF magnet. Experiments on a polyimide (Kapton) indicate that gamma or electron doses or mixed gamma and neutron reactor doses would have to be downgraded by a factor of up to ten to simulate fusion neutron doses. Even when neutrons did constitute a significant portion of the total dose, B-containing E-glass reinforcement was often used; therefore, excess damage from the 10 B + n → 7 Li + α reaction occurred near the glass-epoxy interface. This problem can easily be avoided by substituting B-free glass (R, S, or T types)

Absorbed Dose Distributions in Irradiated Plastic Tubing and Wire Insulation

DEFF Research Database (Denmark)

Miller, Arne; McLaughlin, W. L.

1979-01-01

Plastic tubing and wire insulation were simulated by radiochromic dye dosimeter films having electron absorbing properties similar to the materials of interest (polyethylene and PVC). A 400-keV electron accelerator was used to irradiate from 1, 2, 3 and 4 sides simulating possible industrial...

Developing Topological Insulator Fiber Based Photon Pairs Source for Ultrafast Optoelectronic Applications

Science.gov (United States)

2016-04-01

of a thin layer of topological insulator Bi2Se3 with the transmission of T = 50%. We apply magnetic field B=3 tesla normal to the sample and parallel...nonlinear induced by magnetic field in the Topological Insulator Bi2Se3 and Molybdenum Disulfide MoS2. The nonlinear effect is pulse broadening...Topological Insulator Q- Switched Erbium-Doped Fiber Laser”, IEEE J. Sel. Top. Quant. Electron., 20, 0900508 (2014). [2]. Shuqing Chen et al, “Stable Q

Two dimensional topological insulator in quantizing magnetic fields

Science.gov (United States)

Olshanetsky, E. B.; Kvon, Z. D.; Gusev, G. M.; Mikhailov, N. N.; Dvoretsky, S. A.

2018-05-01

The effect of quantizing magnetic field on the electron transport is investigated in a two dimensional topological insulator (2D TI) based on a 8 nm (013) HgTe quantum well (QW). The local resistance behavior is indicative of a metal-insulator transition at B ≈ 6 T. On the whole the experimental data agrees with the theory according to which the helical edge states transport in a 2D TI persists from zero up to a critical magnetic field Bc after which a gap opens up in the 2D TI spectrum.

Chiral topological excitons in a Chern band insulator

Science.gov (United States)

Chen, Ke; Shindou, Ryuichi

2017-10-01

A family of semiconductors called Chern band insulators are shown to host exciton bands with nonzero topological Chern integers and chiral exciton edge modes. Using a prototypical two-band Chern insulator model, we calculate a cross-correlation function to obtain the exciton bands and their Chern integers. The lowest exciton band acquires Chern integers such as ±1 and ±2 in the electronic Chern insulator phase. The nontrivial topology can be experimentally observed both by a nonlocal optoelectronic response of exciton edge modes and by a phase shift in the cross-correlation response due to the bulk mode. Our result suggests that magnetically doped HgTe, InAs/GaSb quantum wells, and (Bi,Sb)2Te3 thin films are promising candidates for a platform of topological excitonics.

Influence of copper on the by-products of different oil-paper insulations

International Nuclear Information System (INIS)

Hao Jian; Liao Ruijin; Chen, George; Ma Chao

2011-01-01

Transformer failure caused by the corrosion of copper material in transformer attracts great attention of researchers and engineers. In this paper, Karamay No. 25 naphthenic mineral oil, Karamay No. 25 paraffinic mineral oil, Kraft paper and copper were used to compose four combinations of oil-paper insulation samples. The ageing by-products and dielectric properties of the four combinations of oil-paper insulation samples were compared after they were thermally aged at 130 deg. C. The influence of copper on the by-products and dielectric properties of different oil-paper insulations was obtained. The results show that copper can accelerate the ageing rate of insulation oils and reduce their AC breakdown voltage. The content of copper substance dissolved in insulating oil increases with ageing time at first and then decreases. The paper aged in the oil-paper insulation sample with copper has higher moisture content than the one without copper. Results of energy dispersive spectroscopy (EDS) in the scanning electron microscope (SEM) show that there is copper product deposited on the surface of insulation paper. The insulation oil and paper aged in the oil-paper insulation sample with copper have higher dielectric loss and conductivity than that without copper.

Influence of copper on the by-products of different oil-paper insulations

Energy Technology Data Exchange (ETDEWEB)

Hao Jian; Liao Ruijin [State Key Laboratory of Power Transmission Equipment and System Security and New Technology, Chongqing University (China); Chen, George [School of Electronics and Computer Science, University of Southampton (United Kingdom); Ma Chao, E-mail: cquhaojian@126.com [Gansu Electric Power Research Institute (China)

2011-08-12

Transformer failure caused by the corrosion of copper material in transformer attracts great attention of researchers and engineers. In this paper, Karamay No. 25 naphthenic mineral oil, Karamay No. 25 paraffinic mineral oil, Kraft paper and copper were used to compose four combinations of oil-paper insulation samples. The ageing by-products and dielectric properties of the four combinations of oil-paper insulation samples were compared after they were thermally aged at 130 deg. C. The influence of copper on the by-products and dielectric properties of different oil-paper insulations was obtained. The results show that copper can accelerate the ageing rate of insulation oils and reduce their AC breakdown voltage. The content of copper substance dissolved in insulating oil increases with ageing time at first and then decreases. The paper aged in the oil-paper insulation sample with copper has higher moisture content than the one without copper. Results of energy dispersive spectroscopy (EDS) in the scanning electron microscope (SEM) show that there is copper product deposited on the surface of insulation paper. The insulation oil and paper aged in the oil-paper insulation sample with copper have higher dielectric loss and conductivity than that without copper.

Strain engineering and one-dimensional organization of metal-insulator domains in single-crystal vanadium dioxide beams.

Science.gov (United States)

Cao, J; Ertekin, E; Srinivasan, V; Fan, W; Huang, S; Zheng, H; Yim, J W L; Khanal, D R; Ogletree, D F; Grossman, J C; Wu, J

2009-11-01

Correlated electron materials can undergo a variety of phase transitions, including superconductivity, the metal-insulator transition and colossal magnetoresistance. Moreover, multiple physical phases or domains with dimensions of nanometres to micrometres can coexist in these materials at temperatures where a pure phase is expected. Making use of the properties of correlated electron materials in device applications will require the ability to control domain structures and phase transitions in these materials. Lattice strain has been shown to cause the coexistence of metallic and insulating phases in the Mott insulator VO(2). Here, we show that we can nucleate and manipulate ordered arrays of metallic and insulating domains along single-crystal beams of VO(2) by continuously tuning the strain over a wide range of values. The Mott transition between a low-temperature insulating phase and a high-temperature metallic phase usually occurs at 341 K in VO(2), but the active control of strain allows us to reduce this transition temperature to room temperature. In addition to device applications, the ability to control the phase structure of VO(2) with strain could lead to a deeper understanding of the correlated electron materials in general.

The effect of van der Waal's gap expansions on the surface electronic structure of layered topological insulators

International Nuclear Information System (INIS)

Eremeev, S V; Vergniory, M G; Chulkov, E V; Menshchikova, T V; Shaposhnikov, A A

2012-01-01

On the basis of relativistic ab initio calculations, we show that an expansion of van der Waal's (vdW) spacings in layered topological insulators caused by intercalation of deposited atoms, leads to the simultaneous emergence of parabolic and M-shaped two-dimensional electron gas (2DEG) bands as well as Rashba-splitting of the former states. The expansion of vdW spacings and the emergence of the 2DEG states localized in the (sub)surface region are also accompanied by a relocation of the topological surface state to the lower quintuple layers, that can explain the absence of inter-band scattering found experimentally. (paper)

Spin-polarized currents in the tunnel contact of a normal conductor and a two-dimensional topological insulator

International Nuclear Information System (INIS)

Sukhanov, A. A.; Sablikov, V. A.

2013-01-01

The spin filtering of electrons tunneling from the edge states of a two-dimensional topological insulator into a normal conductor under a magnetic field (external or induced due to proximity to a magnetic insulator) is studied. Calculations are performed for a tunnel contact of finite length between the topological insulator and an electronic multimode quantum strip. It is shown that the flow of tunneling electrons is split in the strip, so that spin-polarized currents arise in its left and right branches. These currents can be effectively controlled by the contact voltage and the chemical potential of the system. The presence of a magnetic field, which splits the spin subbands of the electron spectrum in the strip, gives rise to switching of the spin current between the strip branches

Distribution of Energy Deposited in Plastic Tubing and Copper-Wire Insulation by Electron Beam Irradiation

DEFF Research Database (Denmark)

Pedersen, Walther Batsberg; Miller, Arne; Pejtersen, K.

1978-01-01

chloride insulation. Radiochromic dye films equivalent to the insulating materials were used as accurate dosimeters having a response independent of dose rate. Irradiations were in various geometries, wire and plastic thicknesses, positions along the beam scan, and with different backing materials near...

Requirements for self-magnetically insulated transmission lines

Directory of Open Access Journals (Sweden)

J. Pace VanDevender

2015-03-01

Full Text Available Self-magnetically insulated transmission lines (MITLs connect pulsed-power drivers with a load. Although the technology was originally developed in the 1970s and is widely used today in super power generators, failure of the technology is the principal limitation on the power that can be delivered to an experiment. We address issues that are often overlooked, rejected after inadequate simulations, or covered by overly conservative assumptions: (i electron retrapping in coupling MITLs to loads, (ii the applicability of collisionless versus collisional electron flow, (iii power transport efficiency as a function of the geometry at the beginning of the MITL, (iv gap closure and when gap closure can be neglected, and (v the role of negative ions in causing anode plasmas and enhancing current losses. We suggest a practical set of conservative design requirements for self-magnetically insulated electron flow based on the results discussed in this paper and on previously published results. The requirements are not necessarily severe constraints in all MITL applications; however, each of the 18 suggested requirements should be examined in the design of a MITL and in the investigation of excessive losses.

Prediction of breakdown voltages in novel gases for high voltage insulation

International Nuclear Information System (INIS)

Koch, M.

2015-01-01

This thesis submitted to the Swiss Federal Institute of Technology ETH in Zurich examines the use of sulphur hexafluoride (SF_6) and similar gases as important insulation media for high voltage equipment. Due to its superior insulation properties, SF_6 is widely used in gas-insulated switchgear. However, the gas also has a very high global warming potential and the content of SF_6 in the atmosphere is constantly increasing. The search for new insulation gases using classical breakdown experiments is discussed. A model for SF_6 based on the stepped leader model is described. This calculates the breakdown voltages in arbitrary electrode configurations and under standard voltage waveforms. Thus, the thesis provides a method for the prediction of breakdown voltages of arbitrary field configurations under standard voltage waveforms for gases with electron-attaching properties. With this, further gases can be characterized for usage as high voltage insulation media

AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors with reduced leakage current and enhanced breakdown voltage using aluminum ion implantation

Energy Technology Data Exchange (ETDEWEB)

Sun, Shichuang [Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074 (China); Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, Suzhou 215123 (China); Fu, Kai, E-mail: kfu2009@sinano.ac.cn, E-mail: cqchen@mail.hust.edu.cn; Yu, Guohao; Zhang, Zhili; Song, Liang; Deng, Xuguang; Li, Shuiming; Sun, Qian; Cai, Yong; Zhang, Baoshun [Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, Suzhou 215123 (China); Qi, Zhiqiang; Dai, Jiangnan; Chen, Changqing, E-mail: kfu2009@sinano.ac.cn, E-mail: cqchen@mail.hust.edu.cn [Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074 (China)

2016-01-04

This letter has studied the performance of AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors on silicon substrate with GaN buffer treated by aluminum ion implantation for insulating followed by a channel regrown by metal–organic chemical vapor deposition. For samples with Al ion implantation of multiple energies of 140 keV (dose: 1.4 × 10{sup 14} cm{sup −2}) and 90 keV (dose: 1 × 10{sup 14} cm{sup −2}), the OFF-state leakage current is decreased by more than 3 orders and the breakdown voltage is enhanced by nearly 6 times compared to the samples without Al ion implantation. Besides, little degradation of electrical properties of the 2D electron gas channel is observed where the maximum drain current I{sub DSmax} at a gate voltage of 3 V was 701 mA/mm and the maximum transconductance g{sub mmax} was 83 mS/mm.

Development of a Diehard GEM using PTFE insulator substrate

International Nuclear Information System (INIS)

Wakabayashi, M; Tamagawa, T; Takeuchi, Y; Aoki, K; Taketani, A; Komiya, K; Hamagaki, H

2014-01-01

We have developed the gas electron multiplier (GEM) using polytetrafluoroethylene (PTFE) insulator substrate (PTFE-GEM). Carbonization on insulator layer by discharges shorts the GEM electrodes, causing permanent breakdown. Since PTFE is hard to be carbonized against arc discharges, PTFE-GEM is expected to be robust against breakdown. Gains as high as 2.6 × 10 4 were achieved with PTFE-GEM (50 μm thick) in Ar/CO 2 = 70%/30% gas mixture at V GEM = 730 V. PTFE-GEM never showed a permanent breakdown even after suffering more than 40000 times discharges during the experiment. The result demonstrates that PTFE-GEM is really robust against discharges. We conclude that PTFE is an excellent insulator material for the GEM productions

Phase-field model of insulator-to-metal transition in VO2 under an electric field

Science.gov (United States)

Shi, Yin; Chen, Long-Qing

2018-05-01

The roles of an electric field and electronic doping in insulator-to-metal transitions are still not well understood. Here we formulated a phase-field model of insulator-to-metal transitions by taking into account both structural and electronic instabilities as well as free electrons and holes in VO2, a strongly correlated transition-metal oxide. Our phase-field simulations demonstrate that in a VO2 slab under a uniform electric field, an abrupt universal resistive transition occurs inside the supercooling region, in sharp contrast to the conventional Landau-Zener smooth electric breakdown. We also show that hole doping may decouple the structural and electronic phase transitions in VO2, leading to a metastable metallic monoclinic phase which could be stabilized through a geometrical confinement and the size effect. This work provides a general mesoscale thermodynamic framework for understanding the influences of electric field, electronic doping, and stress and strain on insulator-to-metal transitions and the corresponding mesoscale domain structure evolution in VO2 and related strongly correlated systems.

Characterization of light element impurities in ultrathin silicon-on-insulator layers by luminescence activation using electron irradiation

International Nuclear Information System (INIS)

Nakagawa-Toyota, Satoko; Tajima, Michio; Hirose, Kazuyuki; Ohshima, Takeshi; Itoh, Hisayoshi

2009-01-01

We analyzed light element impurities in ultrathin top Si layers of silicon-on-insulator (SOI) wafers by luminescence activation using electron irradiation. Photoluminescence (PL) analysis under ultraviolet (UV) light excitation was performed on various commercial SOI wafers after the irradiation. We detected the C-line related to a complex of interstitial carbon and oxygen impurities and the G-line related to a complex of interstitial and substitutional carbon impurities in the top Si layer with a thickness down to 62 nm after electron irradiation. We showed that there were differences in the impurity concentration depending on the wafer fabrication methods and also that there were variations in these concentrations in the respective wafers. Xenon ion implantation was used to activate top Si layers selectively so that we could confirm that the PL signal under the UV light excitation comes not from substrates but from top Si layers. The present method is a very promising tool to evaluate the light element impurities in top Si layers. (author)

Cellulose Insulation

Science.gov (United States)

1980-01-01

Fire retardant cellulose insulation is produced by shredding old newspapers and treating them with a combination of chemicals. Insulating material is blown into walls and attics to form a fiber layer which blocks the flow of air. All-Weather Insulation's founders asked NASA/UK-TAP to help. They wanted to know what chemicals added to newspaper would produce an insulating material capable of meeting federal specifications. TAP researched the query and furnished extensive information. The information contributed to successful development of the product and helped launch a small business enterprise which is now growing rapidly.

Development of a Diehard GEM using PTFE insulator substrate

OpenAIRE

Wakabayashi, M.; Komiya, K.; Tamagawa, T.; Takeuchi, Y.; Aoki, K.; Taketani, A.; Hamagaki, H.

2014-01-01

We have developed the gas electron multiplier (GEM) using polytetrafluoroethylene (PTFE) insulator substrate (PTFE-GEM). Carbonization on insulator layer by discharges shorts the GEM electrodes, causing permanent breakdown. Since PTFE is hard to be carbonized against arc discharges, PTFE-GEM is expected to be robust against breakdown. Gains as high as 2.6x10^4 were achieved with PTFE-GEM (50 um thick) in Ar/CO2 = 70%/30% gas mixture at V_GEM = 730V. PTFE-GEM never showed a permanent breakdown...

Metal-insulator transition induced in CaVO{sub 3} thin films

Energy Technology Data Exchange (ETDEWEB)

Gu Man [Department of Physics, University of Virginia, 382 McCormick Rd., Charlottesville, Virginia 22904 (United States); Laverock, Jude; Chen, Bo; Smith, Kevin E. [Department of Physics, Boston University, 590 Commonwealth Avenue, Boston, Massachusetts 02215 (United States); Wolf, Stuart A. [Department of Physics, University of Virginia, 382 McCormick Rd., Charlottesville, Virginia 22904 (United States); Department of Materials Science and Engineering, University of Virginia, 395 McCormick Rd., Charlottesville, Virginia 22904 (United States); Lu Jiwei [Department of Materials Science and Engineering, University of Virginia, 395 McCormick Rd., Charlottesville, Virginia 22904 (United States)

2013-04-07

Stoichiometric CaVO{sub 3} (CVO) thin films of various thicknesses were grown on single crystal SrTiO{sub 3} (STO) (001) substrates using a pulsed electron-beam deposition technique. The CVO films were capped with a 2.5 nm STO layer. We observed a temperature driven metal-insulator transition (MIT) in CVO films with thicknesses below 4 nm that was not observed in either thick CVO films or STO films. The emergence of this MIT can be attributed to the reduction in effective bandwidth due to a crossover from a three-dimensional metal to a two-dimensional insulator. The insulating phase was only induced with a drive current below 0.1 {mu}A. X-ray absorption measurements indicated different electronic structures for thick and very thin films of CVO. Compared with the thick film ({approx}60 nm), thin films of CVO (2-4 nm) were more two-dimensional with the V charge state closer to V{sup 4+}.

Superconductivity and ferromagnetism in topological insulators

Science.gov (United States)

Zhang, Duming

Topological insulators, a new state of matter discovered recently, have attracted great interest due to their novel properties. They are insulating inside the bulk, but conducting at the surface or edges. This peculiar behavior is characterized by an insulating bulk energy gap and gapless surface or edge states, which originate from strong spin-orbit coupling and time-reversal symmetry. The spin and momentum locked surface states not only provide a model system to study fundamental physics, but can also lead to applications in spintronics and dissipationless electronics. While topological insulators are interesting by themselves, more exotic behaviors are predicted when an energy gap is induced at the surface. This dissertation explores two types of surface state gap in topological insulators, a superconducting gap induced by proximity effect and a magnetic gap induced by chemical doping. The first three chapters provide introductory theory and experimental details of my research. Chapter 1 provides a brief introduction to the theoretical background of topological insulators. Chapter 2 is dedicated to material synthesis principles and techniques. I will focus on two major synthesis methods: molecular beam epitaxy for the growth of Bi2Se3 thin films and chemical vapor deposition for the growth of Bi2Se3 nanoribbons and nanowires. Material characterization is discussed in Chapter 3. I will describe structural, morphological, magnetic, electrical, and electronic characterization techniques used to study topological insulators. Chapter 4 discusses the experiments on proximity-induced superconductivity in topological insulator (Bi2Se3) nanoribbons. This work is motivated by the search for the elusive Majorana fermions, which act as their own antiparticles. They were proposed by Ettore Majorara in 1937, but have remained undiscovered. Recently, Majorana's concept has been revived in condensed matter physics: a condensed matter analog of Majorana fermions is predicted to

Electronic and transport properties of the Mn-doped topological insulator Bi.sub.2./sub.Te.sub.3./sub.: a first-principles study

Czech Academy of Sciences Publication Activity Database

Carva, K.; Kudrnovský, Josef; Máca, František; Drchal, Václav; Turek, I.; Baláž, P.; Tkáč, V.; Holý, V.; Sechovský, V.; Honolka, Jan

2016-01-01

Roč. 93, č. 21 (2016), s. 1-8, č. článku 214409. ISSN 2469-9950 R&D Projects: GA ČR(CZ) GA14-30062S Grant - others:AV ČR(CZ) Fellowship J. E. Purkyně Institutional support: RVO:68378271 Keywords : topological insulator * electronic structure * transport * Bi 2 Te 3 * Mn dopant Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.836, year: 2016

Tunable metal-insulator transitions in bilayer graphene by thermal annealing

OpenAIRE

Kalon, Gopinadhan; Shin, Young Jun; Yang, Hyunsoo

2012-01-01

Tunable and highly reproducible metal-insulator transitions have been observed in bilayer graphene upon thermal annealing at 400 K under high vacuum conditions. Before annealing, the sample is metallic in the whole temperature regime of study. Upon annealing, the conductivity changes from metallic to that of an insulator and the transition temperature is a function of annealing time. The pristine metallic state can be reinstated by exposing to air thereby inducing changes in the electronic pr...

Photo-response of a P3HT:PCBM blend in metal-insulator-semiconductor capacitors

Energy Technology Data Exchange (ETDEWEB)

Devynck, M.; Rostirolla, B.; Watson, C. P.; Taylor, D. M., E-mail: d.m.taylor@bangor.ac.uk [School of Electronic Engineering, Bangor University, Dean Street, Bangor, Gwynedd LL57 1UT (United Kingdom)

2014-11-03

Metal-insulator-semiconductor capacitors are investigated, in which the insulator is cross-linked polyvinylphenol and the active layer a blend of poly(3-hexylthiophene), P3HT, and the electron acceptor [6,6]-phenyl-C{sub 61}-butyric acid methyl ester (PCBM). Admittance spectra and capacitance-voltage measurements obtained in the dark both display similar behaviour to those previously observed in P3HT-only devices. However, the photo-capacitance response is significantly enhanced in the P3HT:PCBM case, where exciton dissociation leads to electron transfer into the PCBM component. The results are consistent with a network of PCBM aggregates that is continuous through the film but with no lateral interconnection between the aggregates at or near the blend/insulator interface.

Prediction of breakdown voltages in novel gases for high voltage insulation

Energy Technology Data Exchange (ETDEWEB)

Koch, M.

2015-07-01

This thesis submitted to the Swiss Federal Institute of Technology ETH in Zurich examines the use of sulphur hexafluoride (SF{sub 6}) and similar gases as important insulation media for high voltage equipment. Due to its superior insulation properties, SF{sub 6} is widely used in gas-insulated switchgear. However, the gas also has a very high global warming potential and the content of SF{sub 6} in the atmosphere is constantly increasing. The search for new insulation gases using classical breakdown experiments is discussed. A model for SF{sub 6} based on the stepped leader model is described. This calculates the breakdown voltages in arbitrary electrode configurations and under standard voltage waveforms. Thus, the thesis provides a method for the prediction of breakdown voltages of arbitrary field configurations under standard voltage waveforms for gases with electron-attaching properties. With this, further gases can be characterized for usage as high voltage insulation media.

USE OF ELECTRONIC EDUCATIONAL RESOURCES WHEN TRAINING IN WORK WITH SPREADSHEETS

Directory of Open Access Journals (Sweden)

Х А Гербеков

2017-12-01

Full Text Available Today the tools for maintaining training courses based on opportunities of information and communication technologies are developed. Practically in all directions of preparation and on all subject matters electronic textbook and self-instruction manuals are created. Nevertheless the industry of computer educational and methodical materials actively develops and gets more and more areas of development and introduction. In this regard more and more urgent is a problem of development of the electronic educational resources adequate to modern educational requirements. Creation and the organization of training courses with use of electronic educational resources in particular on the basis of Internet technologies remains a difficult methodical task.In article the questions connected with development of electronic educational resources for use when studying the substantial line “Information technologies” of a school course of informatics in particular for studying of spreadsheets are considered. Also the analysis of maintenance of a school course and the unified state examination from the point of view of representation of task in him corresponding to the substantial line of studying “Information technologies” on mastering technology of information processing in spreadsheets and the methods of visualization given by means of charts and schedules is carried out.

Investigation of self-powered gamma flux detectors with Lead(II) oxide serving as both emitter and insulator

International Nuclear Information System (INIS)

Shi, H.; Yue, S.; Jonkmans, G.; Sur, B.; Hilborn, J.

2010-01-01

The use of Lead(II) oxide as the electron-emitting component and the insulating component of self-powered flux detectors is a concept that had not been previously explored. Detectors constructed from various combinations of electrodes (stainless steel, Al, Pb, and W) and insulating materials (Al 2 O 3 and PbO) were irradiated in a 427 Gy/h gamma field. Although high gamma sensitivities were achieved, PbO did not prove to be a strong emitter of gamma-induced electrons. Nevertheless, PbO did serve as a better insulator than one that is currently in use, namely alumina. (author)

Effect of static charge fluctuations on the conduction along the edge of two-dimensional topological insulator

Science.gov (United States)

Vayrynen, Jukka; Goldstein, Moshe; Glazman, Leonid

2013-03-01

Static charge disorder may create electron puddles in the bulk of a material which nominally is in the insulating state. A single puddle - quantum dot - coupled to the helical edge of a two-dimensional topological insulator enhances the electron backscattering within the edge. The backscattering rate increases with the electron dwelling time in the dot. While remaining inelastic, the backscattering off a dot may be far more effective than the proposed earlier inelastic processes involving a local scatterer with no internal structure. We find the temperature dependence of the dot-induced correction to the universal conductance of the edge. In addition to the single-dot effect, we calculate the classical temperature-independent conductance correction caused by a weakly conducting bulk. We use our theory to assess the effect of static charge fluctuations in a heterostructure on the edge electron transport in a two-dimensional topological insulator. The work at Yale University is supported by NSF DMR Grant No. 1206612 and the Simons Foundation.

Thermal insulation

International Nuclear Information System (INIS)

Aspden, G.J.; Howard, R.S.

1988-01-01

The patent concerns high temperature thermal insulation of large vessels, such as the primary vessel of a liquid metal cooled nuclear reactor. The thermal insulation consists of multilayered thermal insulation modules, and each module comprises a number of metal sheet layers sandwiched between a back and front plate. The layers are linked together by straps and clips to control the thickness of the module. (U.K.)

Improved linearity in AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors with nonlinear polarization dielectric

International Nuclear Information System (INIS)

Gao, Tao; Xu, Ruimin; Kong, Yuechan; Zhou, Jianjun; Kong, Cen; Dong, Xun; Chen, Tangsheng

2015-01-01

We demonstrate highly improved linearity in a nonlinear ferroelectric of Pb(Zr 0.52 Ti 0.48 )-gated AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor (MIS-HEMT). Distinct double-hump feature in the transconductance-gate voltage (g m -V g ) curve is observed, yielding remarkable enhancement in gate voltage swing as compared to MIS-HEMT with conventional linear gate dielectric. By incorporating the ferroelectric polarization into a self-consistent calculation, it is disclosed that in addition to the common hump corresponding to the onset of electron accumulation, the second hump at high current level is originated from the nonlinear polar nature of ferroelectric, which enhances the gate capacitance by increasing equivalent dielectric constant nonlinearly. This work paves a way for design of high linearity GaN MIS-HEMT by exploiting the nonlinear properties of dielectric

Self-magnetically insulated ion diode

International Nuclear Information System (INIS)

VanDevender, J.; Quintenz, J.; Leeper, R.; Johnson, D.; Crow, J.

1981-01-01

Light ion diodes for producing 1--100 TW ion beams are required for inertial confinement fusion. The theory, numerical simulations, and experiments on a self-magnetically insulated ion diode are presented. The treatment is from the point of view of a self-magnetically insulated transmission line with an ion loss current and differs from the usual treatment of the pinched electron beam diode. The simulations show that the ratio V/IZ 0 =0.25 in such a structure with voltage V, local total current I, and local vacuum wave impedance Z 0 . The ion current density is enhanced by a factor of approximately 2 over the simple space-charge limited value. The simulation results are verified in an experiment. An analytical theory is then presented for scaling the results to produce a focused beam of protons with a power of up to 10 13 W

Dressed topological insulators. Rashba impurity, Kondo effect, magnetic impurities, proximity-induced superconductivity, hybrid systems

International Nuclear Information System (INIS)

Posske, Thore Hagen

2016-01-01

Topological insulators are electronic phases that insulate in the bulk and accommodate a peculiar, metallic edge liquid with a spin-dependent dispersion. They are regarded to be of considerable future use in spintronics and for quantum computation. Besides determining the intrinsic properties of this rather novel electronic phase, considering its combination with well-known physical systems can generate genuinely new physics. In this thesis, we report on such combinations including topological insulators. Specifically, we analyze an attached Rashba impurity, a Kondo dot in the two channel setup, magnetic impurities on the surface of a strong three-dimensional topological insulator, the proximity coupling of the latter system to a superconductor, and hybrid systems consisting of a topological insulator and a semimetal. Let us summarize our primary results. Firstly, we determine an analytical formula for the Kondo cloud and describe its possible detection in current correlations far away from the Kondo region. We thereby rely on and extend the method of refermionizable points. Furthermore, we find a class of gapless topological superconductors and semimetals, which accommodate edge states that behave similarly to the ones of globally gapped topological phases. Unexpectedly, we also find edge states that change their chirality when affected by sufficiently strong disorder. We regard the presented research helpful in future classifications and applications of systems containing topological insulators, of which we propose some examples.

Dressed topological insulators. Rashba impurity, Kondo effect, magnetic impurities, proximity-induced superconductivity, hybrid systems

Energy Technology Data Exchange (ETDEWEB)

Posske, Thore Hagen

2016-02-26

Topological insulators are electronic phases that insulate in the bulk and accommodate a peculiar, metallic edge liquid with a spin-dependent dispersion. They are regarded to be of considerable future use in spintronics and for quantum computation. Besides determining the intrinsic properties of this rather novel electronic phase, considering its combination with well-known physical systems can generate genuinely new physics. In this thesis, we report on such combinations including topological insulators. Specifically, we analyze an attached Rashba impurity, a Kondo dot in the two channel setup, magnetic impurities on the surface of a strong three-dimensional topological insulator, the proximity coupling of the latter system to a superconductor, and hybrid systems consisting of a topological insulator and a semimetal. Let us summarize our primary results. Firstly, we determine an analytical formula for the Kondo cloud and describe its possible detection in current correlations far away from the Kondo region. We thereby rely on and extend the method of refermionizable points. Furthermore, we find a class of gapless topological superconductors and semimetals, which accommodate edge states that behave similarly to the ones of globally gapped topological phases. Unexpectedly, we also find edge states that change their chirality when affected by sufficiently strong disorder. We regard the presented research helpful in future classifications and applications of systems containing topological insulators, of which we propose some examples.

Analytical Study of Usage of Electronic Information Resources at Pharmacopoeial Libraries in India

Directory of Open Access Journals (Sweden)

Sunil Tyagi

2014-02-01

Full Text Available The objective of this study is to know the rate and purpose of the use of e-resource by the scientists at pharmacopoeial libraries in India. Among other things, this study examined the preferences of the scientists toward printed books and journals, electronic information resources, and pattern of using e-resources. Non-probability sampling specially accidental and purposive technique was applied in the collection of primary data through administration of user questionnaire. The sample respondents chosen for the study consists of principle scientific officer, senior scientific officer, scientific officer, and scientific assistant of different division of the laboratories, namely, research and development, pharmaceutical chemistry, pharmacovigilance, pharmacology, pharmacogonosy, and microbiology. The findings of the study reveal the personal experiences and perceptions they have had on practice and research activity using e-resource. The major findings indicate that of the total anticipated participants, 78% indicated that they perceived the ability to use computer for electronic information resources. The data analysis shows that all the scientists belonging to the pharmacopoeial libraries used electronic information resources to address issues relating to drug indexes and compendia, monographs, drugs obtained through online databases, e-journals, and the Internet sources—especially polices by regulatory agencies, contacts, drug promotional literature, and standards.

Asymmetric Cherenkov acoustic reverse in topological insulators

Science.gov (United States)

Smirnov, Sergey

2014-09-01

A general phenomenon of the Cherenkov radiation known in optics or acoustics of conventional materials is a formation of a forward cone of, respectively, photons or phonons emitted by a particle accelerated above the speed of light or sound in those materials. Here we suggest three-dimensional topological insulators as a unique platform to fundamentally explore and practically exploit the acoustic aspect of the Cherenkov effect. We demonstrate that by applying an in-plane magnetic field to a surface of a three-dimensional topological insulator one may suppress the forward Cherenkov sound up to zero at a critical magnetic field. Above the critical field the Cherenkov sound acquires pure backward nature with the polar distribution differing from the forward one generated below the critical field. Potential applications of this asymmetric Cherenkov reverse are in the design of low energy electronic devices such as acoustic ratchets or, in general, in low power design of electronic circuits with a magnetic field control of the direction and magnitude of the Cherenkov dissipation.

Amorphous topological insulators constructed from random point sets

Science.gov (United States)

Mitchell, Noah P.; Nash, Lisa M.; Hexner, Daniel; Turner, Ari M.; Irvine, William T. M.

2018-04-01

The discovery that the band structure of electronic insulators may be topologically non-trivial has revealed distinct phases of electronic matter with novel properties1,2. Recently, mechanical lattices have been found to have similarly rich structure in their phononic excitations3,4, giving rise to protected unidirectional edge modes5-7. In all of these cases, however, as well as in other topological metamaterials3,8, the underlying structure was finely tuned, be it through periodicity, quasi-periodicity or isostaticity. Here we show that amorphous Chern insulators can be readily constructed from arbitrary underlying structures, including hyperuniform, jammed, quasi-crystalline and uniformly random point sets. While our findings apply to mechanical and electronic systems alike, we focus on networks of interacting gyroscopes as a model system. Local decorations control the topology of the vibrational spectrum, endowing amorphous structures with protected edge modes—with a chirality of choice. Using a real-space generalization of the Chern number, we investigate the topology of our structures numerically, analytically and experimentally. The robustness of our approach enables the topological design and self-assembly of non-crystalline topological metamaterials on the micro and macro scale.

Page 170 Use of Electronic Resources by Undergraduates in Two ...

African Journals Online (AJOL)

undergraduate students use electronic resources such as NUC virtual library, HINARI, ... web pages articles from magazines, encyclopedias, pamphlets and other .... of Nigerian university libraries have Internet connectivity, some of the system.

Pressure-driven insulator-metal transition in cubic phase UO2

Science.gov (United States)

Huang, Li; Wang, Yilin; Werner, Philipp

2017-09-01

Understanding the electronic properties of actinide oxides under pressure poses a great challenge for experimental and theoretical studies. Here, we investigate the electronic structure of cubic phase uranium dioxide at different volumes using a combination of density functional theory and dynamical mean-field theory. The ab initio calculations predict an orbital-selective insulator-metal transition at a moderate pressure of ∼45 GPa. At this pressure the uranium's 5f 5/2 state becomes metallic, while the 5f 7/2 state remains insulating up to about 60 GPa. In the metallic state, we observe a rapid decrease of the 5f occupation and total angular momentum with pressure. Simultaneously, the so-called “Zhang-Rice state”, which is of predominantly 5f 5/2 character, quickly disappears after the transition into the metallic phase.

Model of e-learning with electronic educational resources of new generation

Directory of Open Access Journals (Sweden)

A. V. Loban

2017-01-01

Full Text Available Purpose of the article: improving of scientific and methodical base of the theory of the е-learning of variability. Methods used: conceptual and logical modeling of the е-learning of variability process with electronic educational resource of new generation and system analysis of the interconnection of the studied subject area, methods, didactics approaches and information and communication technologies means. Results: the formalization complex model of the е-learning of variability with electronic educational resource of new generation is developed, conditionally decomposed into three basic components: the formalization model of the course in the form of the thesaurusclassifier (“Author of e-resource”, the model of learning as management (“Coordination. Consultation. Control”, the learning model with the thesaurus-classifier (“Student”. Model “Author of e-resource” allows the student to achieve completeness, high degree of didactic elaboration and structuring of the studied material in triples of variants: modules of education information, practical task and control tasks; the result of the student’s (author’s of e-resource activity is the thesaurus-classifier. Model of learning as management is based on the principle of personal orientation of learning in computer environment and determines the logic of interaction between the lecturer and the student when determining the triple of variants individually for each student; organization of a dialogue between the lecturer and the student for consulting purposes; personal control of the student’s success (report generation and iterative search for the concept of the class assignment in the thesaurus-classifier before acquiring the required level of training. Model “Student” makes it possible to concretize the learning tasks in relation to the personality of the student and to the training level achieved; the assumption of the lecturer about the level of training of a

Estimation of thermal insulation performance in multi-layer insulator for liquid helium pipe

International Nuclear Information System (INIS)

Shibanuma, Kiyoshi; Kuriyama, Masaaki; Shibata, Takemasa

1991-01-01

For a multi-layer insulator around the liquid helium pipes for cryopumps of JT-60 NBI, a multi-layer insulator composed of 10 layers, which can be wound around the pipe at the same time and in which the respective layers are in concentric circles by shifting them in arrangement, has been developed and tested. As the result, it was shown that the newly developed multi-layer insulator has better thermal insulation performance than the existing one, i.e. the heat load of the newly developed insulator composed of 10 layers was reduced to 1/3 the heat load of the existing insulator, and the heat leak at the joint of the insulator in longitudinal direction of the pipe was negligible. In order to clarify thermal characteristics of the multi-layer insulator, the heat transfer through the insulator has been analyzed considering the radiation heat transfer by the netting spacer between the reflectors, and the temperature dependence on the emissivities and the heat transmission coefficients of these two components of the insulator. The analytical results were in good agreements with the experimental ones, so that the analytical method was shown to be valid. Concerning the influence of the number of layers and the layer density on the insulation performance of the insulator, analytical results showed that the multi-layer insulator with the number of layer about N = 20 and the layer density below 2.0 layer/mm was the most effective for the liquid helium pipe of a JT-60 cryopump. (author)

A survey of the use of electronic scientific information resources among medical and dental students

Directory of Open Access Journals (Sweden)

Aarnio Matti

2006-05-01

Full Text Available Abstract Background To evaluate medical and dental students' utilization of electronic information resources. Methods A web survey sent to 837 students (49.9% responded. Results Twenty-four per cent of medical students and ninteen per cent of dental students searched MEDLINE 2+ times/month for study purposes, and thiry-two per cent and twenty-four per cent respectively for research. Full-text articles were used 2+ times/month by thirty-three per cent of medical and ten per cent of dental students. Twelve per cent of respondents never utilized either MEDLINE or full-text articles. In multivariate models, the information-searching skills among students were significantly associated with use of MEDLINE and full-text articles. Conclusion Use of electronic resources differs among students. Forty percent were non-users of full-text articles. Information-searching skills are correlated with the use of electronic resources, but the level of basic PC skills plays not a major role in using these resources. The student data shows that adequate training in information-searching skills will increase the use of electronic information resources.

Demonstration of AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors with silicon-oxy-nitride as the gate insulator

International Nuclear Information System (INIS)

Balachander, K.; Arulkumaran, S.; Egawa, T.; Sano, Y.; Baskar, K.

2005-01-01

AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors (MOSHEMTs) were fabricated with plasma enhanced chemical vapor deposited silicon oxy-nitride (SiON) as an insulating layer. The compositions of SiON thin films were confirmed using X-ray photoelectron spectroscopy. The fabricated MOSHEMTs exhibited a very high saturation current density of 1.1 A/mm coupled with high positive operational gate voltage up to +7 V. The MOSHEMTs also exhibited four orders of low gate leakage current and high forward-on voltage when compared with the conventional HEMTs. The drain current collapse using gate pulse measurements showed only a negligible difference in the saturation current density revealing the drastic improvement in passivation of the surface states due to the high quality of dielectric thin films deposited. Thus, based on the improved direct-current operation, SiON can be considered to be a potential gate oxide comparable with other dielectric insulators

Development of signal processing electronics for self powered neutron detector signal with built-in on-line insulation monitoring [Paper No.:E3

International Nuclear Information System (INIS)

Das, Amitabha; Chaganty, S.P.

1993-01-01

Self powered neutron detectors (SPNDs) are employed to monitor in-core neutron flux in nuclear reactors for control, safety and mapping of in-core neutron flux. The d.c. current produced by SPND is converted into a proportional d.c. voltage, which in turn is used for various purposes stated above. This paper describes various features of the SPND amplifier developed in the Electronics Division of Bhabha Atomic Research Centre (BARC). It also outlines the principle of working of on-line monitoring of insulation resistance (IR) of the detector and associated mineral insulated (MI) and soft cables. The amplifier generates an alarm in case of the IR of the detector and the cable assembly falls below an accepted value or the cable is not connected to the amplifier and relieves the operator from periodic and manual checking of each of the individual detectors and ensures the validity of the signal for further processing. (author). 3 figs

Measurement of polychlorinated biphenyls in solid waste such as transformer insulation paper by supercritical fluid extraction and gas chromatography electron capture detection.

Science.gov (United States)

Chikushi, Hiroaki; Fujii, Yuka; Toda, Kei

2012-09-21

In this work, a method for measuring polychlorinated biphenyls (PCBs) in contaminated solid waste was investigated. This waste includes paper that is used in electric transformers to insulate electric components. The PCBs in paper sample were extracted by supercritical fluid extraction and analyzed by gas chromatography-electron capture detection. The recoveries with this method (84-101%) were much higher than those with conventional water extraction (0.08-14%), and were comparable to those with conventional organic solvent extraction. Limit of detection was 0.0074 mg kg(-1) and measurable up to 2.5 mg kg(-1) for 0.5 g of paper sample. Data for real insulation paper by the proposed method agreed well with those by the conventional organic solvent extraction. Extraction from wood and concrete was also investigated and good performance was obtained as well as for paper samples. The supercritical fluid extraction is simpler, faster, and greener than conventional organic solvent extraction. Copyright © 2012 Elsevier B.V. All rights reserved.

Luminescence from metals and insulators

International Nuclear Information System (INIS)

Crawford, O.H.

1985-01-01

The term luminescence is normally applied to light emission that is not explainable by the mechanisms discussed by the other speakers in this meeting. Specifically, it is not transition radiation, surface plasmon radiation, or bremsstrahlung. One normally thinks of luminescence as arising from one-electron transitions within a medium. This talk consists of an overview of luminescence from condensed matter under irradiation by either energetic particles or photons. The author begins with organic molecules, where luminescence is best understood, and then discusses inorganic insulators and metals. Finally, the dependence of yield upon projectile species and velocity is discussed, and predictions are made concerning the relative effectiveness of electrons, protons, and hydrogen atoms in exciting luminescence

Thermal insulating panel

Energy Technology Data Exchange (ETDEWEB)

Hughes, J.T.

1985-09-11

A panel of thermal insulation material has at least one main portion which comprises a dry particulate insulation material compressed within a porous envelope so that it is rigid or substantially rigid and at least one auxiliary portion which is secured to and extends along at least one of the edges of the main portions. The auxiliary portions comprise a substantially uncompressed dry particulate insulation material contained within an envelope. The insulation material of the auxiliary portion may be the same as or may be different from the insulation material of the main portion. The envelope of the auxiliary portion may be made of a porous or a non-porous material. (author).

Nanoscale Phase Separation and Lattice Complexity in VO2: The Metal–Insulator Transition Investigated by XANES via Auger Electron Yield at the Vanadium L23-Edge and Resonant Photoemission

Directory of Open Access Journals (Sweden)

Augusto Marcelli

2017-12-01

Full Text Available Among transition metal oxides, VO2 is a particularly interesting and challenging correlated electron material where an insulator to metal transition (MIT occurs near room temperature. Here we investigate a 16 nm thick strained vanadium dioxide film, trying to clarify the dynamic behavior of the insulator/metal transition. We measured (resonant photoemission below and above the MIT transition temperature, focusing on heating and cooling effects at the vanadium L23-edge using X-ray Absorption Near-Edge Structure (XANES. The vanadium L23-edges probe the transitions from the 2p core level to final unoccupied states with 3d orbital symmetry above the Fermi level. The dynamics of the 3d unoccupied states both at the L3- and at the L2-edge are in agreement with the hysteretic behavior of this thin film. In the first stage of the cooling, the 3d unoccupied states do not change while the transition in the insulating phase appears below 60 °C. Finally, Resonant Photoemission Spectra (ResPES point out a shift of the Fermi level of ~0.75 eV, which can be correlated to the dynamics of the 3d// orbitals, the electron–electron correlation, and the stability of the metallic state.

Experimental verification of acoustic pseudospin multipoles in a symmetry-broken snowflakelike topological insulator

Science.gov (United States)

Zhang, Zhiwang; Tian, Ye; Cheng, Ying; Liu, Xiaojun; Christensen, Johan

2017-12-01

Topologically protected wave engineering in artificially structured media resides at the frontier of ongoing metamaterials research, which is inspired by quantum mechanics. Acoustic analogs of electronic topological insulators have recently led to a wealth of new opportunities in manipulating sound propagation by means of robust edge mode excitations through analogies drawn to exotic quantum states. A variety of artificial acoustic systems hosting topological edge states have been proposed analogous to the quantum Hall effect, topological insulators, and Floquet topological insulators in electronic systems. However, those systems were characterized by a fixed geometry and a very narrow frequency response, which severely hinders the exploration and design of useful applications. Here we establish acoustic multipolar pseudospin states as an engineering degree of freedom in time-reversal invariant flow-free phononic crystals and develop reconfigurable topological insulators through rotation of their meta-atoms and reshaping of the metamolecules. Specifically, we show how rotation forms man-made snowflakelike molecules, whose topological phase mimics pseudospin-down (pseudospin-up) dipolar and quadrupolar states, which are responsible for a plethora of robust edge confined properties and topological controlled refraction disobeying Snell's law.

Improved linearity in AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors with nonlinear polarization dielectric

Energy Technology Data Exchange (ETDEWEB)

Gao, Tao [Fundamental Science on EHF Laboratory, University of Electronic Science and Technology of China (UESTC), Chengdu 611731 (China); Science and Technology on Monolithic Integrated Circuits and Modules Laboratory, Nanjing Electronic Devices Institute, Nanjing 210016 (China); Xu, Ruimin [Fundamental Science on EHF Laboratory, University of Electronic Science and Technology of China (UESTC), Chengdu 611731 (China); Kong, Yuechan, E-mail: kycfly@163.com; Zhou, Jianjun; Kong, Cen; Dong, Xun; Chen, Tangsheng [Science and Technology on Monolithic Integrated Circuits and Modules Laboratory, Nanjing Electronic Devices Institute, Nanjing 210016 (China)

2015-06-15

We demonstrate highly improved linearity in a nonlinear ferroelectric of Pb(Zr{sub 0.52}Ti{sub 0.48})-gated AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor (MIS-HEMT). Distinct double-hump feature in the transconductance-gate voltage (g{sub m}-V{sub g}) curve is observed, yielding remarkable enhancement in gate voltage swing as compared to MIS-HEMT with conventional linear gate dielectric. By incorporating the ferroelectric polarization into a self-consistent calculation, it is disclosed that in addition to the common hump corresponding to the onset of electron accumulation, the second hump at high current level is originated from the nonlinear polar nature of ferroelectric, which enhances the gate capacitance by increasing equivalent dielectric constant nonlinearly. This work paves a way for design of high linearity GaN MIS-HEMT by exploiting the nonlinear properties of dielectric.

Access to electronic information resources by students of federal ...

African Journals Online (AJOL)

The paper discusses access to electronic information resources by students of Federal Colleges of Education in Eha-Amufu and Umunze. Descriptive survey design was used to investigate sample of 526 students. Sampling technique used was a Multi sampling technique. Data for the study were generated using ...

Adoption and use of electronic information resources by medical ...

African Journals Online (AJOL)

This study investigated the adoption and use of electronic information resources by medical science students of the University of Benin. The descriptive survey research design was adopted for the study and 390 students provided the data. Data collected were analysed with descriptive Statistics(Simple percentage and ...

Electrohydrodynamic Direct-Write Orderly Micro/Nanofibrous Structure on Flexible Insulating Substrate

Directory of Open Access Journals (Sweden)

Jiang-Yi Zheng

2014-01-01

Full Text Available AC pulse-modulated electrohydrodynamic direct-writing (EDW was utilized to direct-write orderly micro/nanofibrous structure on the flexible insulating polyethylene terephthalate (PET substrate. During the EDW process, AC electrical field induced charges to reciprocate along the jet and decreased the charge repulsive force that applied on charged jet. Thanks to the smaller charge repulsive force, stable straight jet can be built up to direct-write orderly micro/nanofibrous structures on the insulating substrate. The minimum motion velocity required to direct-write straight line fibrous structure on insulating PET substrate was 700 mm/s. Moreover, the influences of AC voltage amplitude, frequency, and duty cycle ratio on the line width of fibrous structures were investigated. This work proposes a novel solution to overcome the inherent charge repulsion emerging on the insulating substrate, and promotes the application of EDW technology on the flexible electronics.

Wall insulation system

Energy Technology Data Exchange (ETDEWEB)

Kostek, P.T.

1987-08-11

In a channel specially designed to fasten semi-rigid mineral fibre insulation to masonry walls, it is known to be constructed from 20 gauge galvanized steel or other suitable material. The channel is designed to have pre-punched holes along its length for fastening of the channel to the drywall screw. The unique feature of the channel is the teeth running along its length which are pressed into the surface of the butted together sections of the insulation providing a strong grip between the two adjacent pieces of insulation. Of prime importance to the success of this system is the recent technological advancements of the mineral fibre itself which allow the teeth of the channel to engage the insulation fully and hold without mechanical support, rather than be repelled or pushed back by the inherent nature of the insulation material. After the insulation is secured to the masonry wall by concrete nail fastening systems, the drywall is screwed to the channel.

Hubbard interaction in the arbitrary Chern number insulator: A mean-field study

Energy Technology Data Exchange (ETDEWEB)

Wang, Yi-Xiang, E-mail: wangyixiang@jiangnan.edu.cn [School of Science, Jiangnan University, Wuxi 214122 (China); Cao, Jie [College of Science, Hohai University, Nanjing 210098 (China)

2017-05-10

The low-dimensional electron gas owing topological property has attracted many interests recently. In this work, we study the influence of the electron-electron interaction on the arbitrary Chern number insulator. Using the mean-field method, we approximately solve the Hubbard model in the half-filling case and obtain the phase diagrams in different parametric spaces. We further verify the results by calculating the entanglement spectrum, which contains C chiral modes and corresponds to a real space partitioning. - Highlights: • In this work, we made a mean-field study of the Hubbard interaction in the arbitrary Chern number insulator. • We point out that how the Zeeman splitting, the local magnetization and the Hubbard interaction are intimately related. • The mean-field phase diagrams are obtained in different parametric spaces. • The Chern number phase is demonstrated by calculating the entanglement spectrum.

Study on the Secondary Electron Yield γ of Insulator for PDP Cathode

Science.gov (United States)

Motoyama, Y.; Ushirozawa, M.; Matsuzaki, H.; Takano, Y.; Seki, M.

1999-10-01

The secondary electron yield γ of the Plasma Display Panel (PDP) cathode is an important research object because it is closely related to the discharge voltages etc. For metal cathodes, we made a comprehensive examination^1 of γ for all rare gas ions and metastables according to Hagstrum's theory.^2 For γ of MgO, which is the useful insulator cathode, Aboelfotoh et al.^3 calculated the values for Ne and Ar ions supposing a monochrome PDP. However, the values of γ for other rare gas ions and their metastables necessary for a full color PDP have not yet been calculated. These values are calculated in the present study after them. The results are as follows: For ions, He:0.481 and Kr,Xe:0, assuming that there are no impurity levels in MgO; For metastables, He:0.491, Ne:0.489, Ar:0.428, Kr:0.381, and Xe:0.214. These results should serve as useful parameters in discharge simulation for the PDP. ^1H. Matsuzaki: Trans. IEE Jpn., 111-A, 971 (1991). ^2H.D. Hagstrum: Phys. Rev., 96, 336 (1954), ibid., 122, 83 (1961). ^3M.O. Aboelfotoh and J.A. Lorenzen: J. Appl. Phys., 48, 4754 (1977).

Where Do Electronic Books Fit in the College Research Arsenal of Resources?

Science.gov (United States)

Barbier, Patricia

2007-01-01

Student use of electronic books has become an accepted supplement to traditional resources. Student use and satisfaction was monitored through an online course discussion board. Increased use of electronic books indicate this service is an accepted supplement to the print book collection.

Countercurrent in high-current microsecond diodes with magnetic insulation

International Nuclear Information System (INIS)

Bugaev, S.P.; Kim, A.A.; Koshelev, V.I.

1979-01-01

In order to increase the efficiency of the generation of tube electron beams in diodes and the efficiency of the electron beam current pulse duration studied is the formation of the electron counter current in microsecond diodes with magnetic insulation in dependence on the various geometry of the cathode joint. The experiments have been carried out at the accelerator with the following parameters: diode voltage from 400 to 600 kV, the front and duration of the pulse 75 ns and 1-2 μs respectively, beam current from 4 to 17 kA, magnetic field of 18 kGs. The current in the drift tube and the total current of the electron gun have been measured. Distributing resistance current of vacuum insulator has been controlled. Conclusions have been made, that, in the case when the diameters of cathode and cathode holder are equal, the electron current is being produced from the reverse side of cathode plasma, which expands across the magnetic field with the rate of (4-5)x10 5 sm/cs. The counter current value has constituted 15% of the total current at the use of reflector with the geometry repeating the shape of the magnetic field force lines, corresponding to the cathode radius. The counter current has not been present at the use of the flat reflector

Electron emission from insulator surfaces by ultra-short laser pulses

Energy Technology Data Exchange (ETDEWEB)

Acuna, M; Gravielle, M S, E-mail: mario@iafe.uba.a, E-mail: msilvia@iafe.uba.a [Institutes de AstronomIa y Fisica del Espacio, Casilla de Correo 67, Sucursal 28, 1428 Buenos Aires (Argentina)

2009-11-01

Photoelectron emission from insulator surfaces induced by ultra-short laser pulses is studied within a time-dependent distorted wave method. The proposed approach combines the Volkov phase, which takes into account the laser interaction, with a simple representation of the unperturbed surface states, given by the Tight-binding method. The model is applied to evaluate the photoelectron emission from a LiF(001) surface, finding effects of interference produced by the crystal lattice.

Strain-induced metal-insulator phase coexistence in perovskite manganites.

Science.gov (United States)

Ahn, K H; Lookman, T; Bishop, A R

2004-03-25

The coexistence of distinct metallic and insulating electronic phases within the same sample of a perovskite manganite, such as La(1-x-y)Pr(y)Ca(x)MnO3, presents researchers with a tool for tuning the electronic properties in materials. In particular, colossal magnetoresistance in these materials--the dramatic reduction of resistivity in a magnetic field--is closely related to the observed texture owing to nanometre- and micrometre-scale inhomogeneities. Despite accumulated data from various high-resolution probes, a theoretical understanding for the existence of such inhomogeneities has been lacking. Mechanisms invoked so far, usually based on electronic mechanisms and chemical disorder, have been inadequate to describe the multiscale, multiphase coexistence within a unified picture. Moreover, lattice distortions and long-range strains are known to be important in the manganites. Here we show that the texturing can be due to the intrinsic complexity of a system with strong coupling between the electronic and elastic degrees of freedom. This leads to local energetically favourable configurations and provides a natural mechanism for the self-organized inhomogeneities over both nanometre and micrometre scales. The framework provides a physical understanding of various experimental results and a basis for engineering nanoscale patterns of metallic and insulating phases.

Application of electron accelerator for thin film in Indonesia

International Nuclear Information System (INIS)

Danu, Sugiarto; Darsono, Dadang

2004-01-01

Electron accelerator is widely used for the crosslinking of wire and cable insulation, the treatment of heat shrinkable products, precuring of tire components, and the sterilization of medical products. Research and development the use of electron accelerator for thin film in Indonesia covered radiation curing of surface coating, crosslinking of poly (butylenes succinate), crosslinking of wire, cable and heat shrinkable, sterilization of wound dressing, and prevulcanization of tire. In general, comparing with conventional method, electron beam processing have some advantages, such as, less energy consumption, much higher production rate, processing ability at ambient temperature and environmental friendly. Indonesia has a great potential to develop the application of electron accelerator, due to the remarkable growth industrial sector, the abundant of natural resources and the increasing demand of the high quality products. This paper describes the activities concerning with R and D, and application of electron accelerator for processing of thin film. (author)

Insulating materials resistance in intense radiation beams

International Nuclear Information System (INIS)

Oproiu, Constantin; Martin, Diana; Scarlat, Florin; Timus, Dan; Brasoveanu, Mirela; Nemtanu, Monica

2002-01-01

The paper emphasizes the main changes of the mechanical and electrical properties of some organic insulating materials exposed to accelerated electron beams. These materials are liable to be used in nuclear plants and particle accelerators. The principal mechanical and electrical properties analyzed were: tensile strength, fracture strength, tearing on fracture, dielectric strength, electrical resistivity, dielectric constant and tangent angle of dielectric losses. (authors)

Reduction of heat insulation upon soaking of the insulation layer

Science.gov (United States)

Achtliger, J.

1983-09-01

Improved thermal protection of hollow masonry by introduction of a core insulation between the inner and outer shell is discussed. The thermal conductivity of insulation materials was determined in dry state and after soaking by water with different volume-related moisture contents. The interpolated thermal conductivity values from three measured values at 10 C average temperature are presented as a function of the pertinent moisture content. Fills of expanded polystyrene, perlite and granulated mineral fibers, insulating boards made of mineral fibers and in situ cellular plastics produced from urea-formaldehyde resin were investigated. Test results show a confirmation of thermal conductivity values for insulating materials in hollow masonry.

Photoinduced Topological Phase Transitions in Topological Magnon Insulators.

Science.gov (United States)

Owerre, S A

2018-03-13

Topological magnon insulators are the bosonic analogs of electronic topological insulators. They are manifested in magnetic materials with topologically nontrivial magnon bands as realized experimentally in a quasi-two-dimensional (quasi-2D) kagomé ferromagnet Cu(1-3, bdc), and they also possess protected magnon edge modes. These topological magnetic materials can transport heat as well as spin currents, hence they can be useful for spintronic applications. Moreover, as magnons are charge-neutral spin-1 bosonic quasiparticles with a magnetic dipole moment, topological magnon materials can also interact with electromagnetic fields through the Aharonov-Casher effect. In this report, we study photoinduced topological phase transitions in intrinsic topological magnon insulators in the kagomé ferromagnets. Using magnonic Floquet-Bloch theory, we show that by varying the light intensity, periodically driven intrinsic topological magnetic materials can be manipulated into different topological phases with different sign of the Berry curvatures and the thermal Hall conductivity. We further show that, under certain conditions, periodically driven gapped topological magnon insulators can also be tuned to synthetic gapless topological magnon semimetals with Dirac-Weyl magnon cones. We envision that this work will pave the way for interesting new potential practical applications in topological magnetic materials.

Molecular beam epitaxial growth of Bi2Te3 and Sb2Te3 topological insulators on GaAs (111 substrates: a potential route to fabricate topological insulator p-n junction

Directory of Open Access Journals (Sweden)

Zhaoquan Zeng

2013-07-01

Full Text Available High quality Bi2Te3 and Sb2Te3 topological insulators films were epitaxially grown on GaAs (111 substrate using solid source molecular beam epitaxy. Their growth and behavior on both vicinal and non-vicinal GaAs (111 substrates were investigated by reflection high-energy electron diffraction, atomic force microscopy, X-ray diffraction, and high resolution transmission electron microscopy. It is found that non-vicinal GaAs (111 substrate is better than a vicinal substrate to provide high quality Bi2Te3 and Sb2Te3 films. Hall and magnetoresistance measurements indicate that p type Sb2Te3 and n type Bi2Te3 topological insulator films can be directly grown on a GaAs (111 substrate, which may pave a way to fabricate topological insulator p-n junction on the same substrate, compatible with the fabrication process of present semiconductor optoelectronic devices.

Interface States in AlGaN/GaN Metal-Insulator-Semiconductor High Electron Mobility Transistors

International Nuclear Information System (INIS)

Feng Qian; Du Kai; Li Yu-Kun; Shi Peng; Feng Qing

2013-01-01

Frequency-dependent capacitance and conductance measurements are performed on AlGaN/GaN high electron mobility transistors (HEMTs) and NbAlO/AlGaN/GaN metal-insulator-semiconductor HEMTs (MISHEMTs) to extract density and time constants of the trap states at NbAlO/AlGaN interface and gate/AlGaN interface with the gate-voltage biased into the accumulation region and that at the AlGaN/GaN interface with the gate-voltage biased into the depletion region in different circuit models. The measurement results indicate that the trap density at NbAlO/AlGaN interface is about one order lower than that at gate/AlGaN interface while the trap density at AlGaN/GaN interface is in the same order, so the NbAlO film can passivate the AlGaN surface effectively, which is consistent with the current collapse results

Ionic Potential and Band Narrowing as a Source of Orbital Polarization in Nickelate/Insulator Superlattices

Science.gov (United States)

Georgescu, Alexandru B.; Disa, Ankit S.; Kumah, Divine P.; Ismail-Beigi, Sohrab; Walker, Frederick J.; Ahn, Charles H.

Nickelate interfaces display complex, interacting electronic properties such as thickness dependent metal-insulator transitions. One large body of effort involving nickelates has aimed to split the energies of the Ni 3d orbitals (orbital polarization) to make the resulting band structure resemble that of cuprate superconductors. The most commonly studied interfacial system involves superlattices of alternating nickelate and insulating perovksite-structure layers; the resulting orbital polarization at the nickelate-insulator interface is understood as being due to confinement or structural symmetry breaking. By using first principles theory on the NdNiO3/NdAlO3 superlattice, we show that another important source of orbital polarization stems from electrostatic effects: the more ionic nature of the cations in the insulator (when compared to the nickelate) can shift the relative orbital energies of the Ni. We use density functional theory (DFT) and add electronic correlations via slave-bosons to describe the effect of correlation-induced band narrowing on the orbital polarization. Work supported by NSF Grant MRSEC DMR-1119826.

Dynamic surface electronic reconstruction as symmetry-protected topological orders in topological insulator Bi2Se3

Science.gov (United States)

Shu, G. J.; Liou, S. C.; Karna, S. K.; Sankar, R.; Hayashi, M.; Chou, F. C.

2018-04-01

The layered narrow-band-gap semiconductor Bi2Se3 is composed of heavy elements with strong spin-orbital coupling, which has been identified both as a good candidate for a thermoelectric material with high thermoelectric figure of merit (Z T ) and as a topological insulator of the Z2 type with a gapless surface band in a Dirac-cone shape. The existence of a conjugated π -bond system on the surface of each Bi2Se3 quintuple layer is proposed based on an extended valence bond model with valence electrons distributed in the hybridized orbitals. Supporting experimental evidence of a two-dimensional (2D) conjugated π -bond system on each quintuple layer of Bi2Se3 is provided using electron energy-loss spectroscopy and electron density mapping through inverse Fourier transform of x-ray diffraction data. Quantum chemistry calculations support the π -bond existence between partially filled 4 pz orbitals of Se via side-to-side orbital overlap positively. The conjugated π -bond system on the surface of each quintuple Bi2Se3 layer is proposed to be similar to that found in graphite (graphene) and responsible for the unique 2D conduction mechanism. The van der Waals (vdW) attractive force between quintuple layers is interpreted to be coming from the antiferroelectrically ordered effective electric dipoles, which are constructed with π -bond trimer pairs on Se layers across the vdW gap of minimized Coulomb repulsion.

Investigation of electronic lattice structure by positron annihilation in some insulators

International Nuclear Information System (INIS)

Coussot, Gerard

1970-01-01

The angular distribution of gamma quanta resulting from positron annihilation in single insulator crystals was measured with long slit geometry apparatus for intense positron sources ( 64 Cu ≅ 1 Ci). Two new phenomena were observed in the angular correlation curves. In the f. c. c. MgO, UO 2 , CaF 2 crystals, modulations appeared at angles corresponding to the limit of the first Brillouin zone in relation to the crystallographic direction studied. In SiO 2 , F 2 Mg, F 2 Mn crystals, a narrow peak at 0 mrad and a fine structure superimposed on the broad distribution, were resolved. The fine structure which is correlated with the narrow component is characterized by modulations appearing at angles corresponding to the projection of reciprocal lattice vectors along the crystallographic direction investigated. The narrow peak at p ≅ 0 suggests the formation of a bound state (positron-electron). If this bound state is described by a Bloch wave, the modulations observed correspond to the Fourier components which contribute to every reciprocal lattice vector p = G ('Umklapp' process). This model predicts that the 'Umklapp' process in polycrystals must produce a change in slope which can be experimentally observed. A systematic research of optimal observation conditions shows that the intensity of the narrow component is closely correlated with the purity and the perfection of the crystal where p-Ps is presumably formed as suggested by magnetic experiments. (author) [fr

Strategic Planning for Electronic Resources Management: A Case Study at Gustavus Adolphus College

Science.gov (United States)

Hulseberg, Anna; Monson, Sarah

2009-01-01

Electronic resources, the tools we use to manage them, and the needs and expectations of our users are constantly evolving; at the same time, the roles, responsibilities, and workflow of the library staff who manage e-resources are also in flux. Recognizing a need to be more intentional and proactive about how we manage e-resources, the…

REVIEW OF MOODLE PLUGINS FOR DESIGNING MULTIMEDIA ELECTRONIC EDUCATIONAL RESOURCES FROM LANGUAGE DISCIPLINES

Directory of Open Access Journals (Sweden)

Anton M. Avramchuk

2015-09-01

Full Text Available Today the problem of designing multimedia electronic educational resources from language disciplines in Moodle is very important. This system has a lot of different, powerful resources, plugins to facilitate the learning of students with language disciplines. This article presents an overview and comparative analysis of the five Moodle plugins for designing multimedia electronic educational resources from language disciplines. There have been considered their key features and functionality in order to choose the best for studying language disciplines in the Moodle. Plugins are compared by a group of experts according to the criteria: efficiency, functionality and easy use. For a comparative analysis of the plugins it is used the analytic hierarchy process.

Phase Separation in Doped Mott Insulators

Directory of Open Access Journals (Sweden)

Chuck-Hou Yee

2015-04-01

Full Text Available Motivated by the commonplace observation of Mott insulators away from integer filling, we construct a simple thermodynamic argument for phase separation in first-order doping-driven Mott transitions. We show how to compute the critical dopings required to drive the Mott transition using electronic structure calculations for the titanate family of perovskites, finding good agreement with experiment. The theory predicts that the transition is percolative and should exhibit Coulomb frustration.

Propagation Characteristics of Multilayer Hybrid Insulator-Metal-Insulator and Metal-Insulator-Metal Plasmonic Waveguides

Directory of Open Access Journals (Sweden)

M. Talafi Noghani

2014-02-01

Full Text Available Propagation characteristics of symmetrical and asymmetrical multilayer hybrid insulator-metal-insulator (HIMI and metal-insulator-metal (HMIM plasmonic slab waveguides are investigated using the transfer matrix method. Propagation length (Lp and spatial length (Ls are used as two figures of merit to qualitate the plasmonic waveguides. Symmetrical structures are shown to be more performant (having higher Lp and lower Ls, nevertheless it is shown that usage of asymmetrical geometry could compensate for the performance degradation in practically realized HIMI waveguides with different substrate materials. It is found that HMIM slab waveguide could support almost long-range subdiffraction plasmonic modes at dimensions lower than the spatial length of the HIMI slab waveguide.

Nonvolatile Solid-State Charged-Polymer Gating of Topological Insulators into the Topological Insulating Regime

Science.gov (United States)

Ireland, R. M.; Wu, Liang; Salehi, M.; Oh, S.; Armitage, N. P.; Katz, H. E.

2018-04-01

We demonstrate the ability to reduce the carrier concentration of thin films of the topological insulator (TI) Bi2 Se3 by utilizing a nonvolatile electrostatic gating via corona charging of electret polymers. Sufficient electric field can be imparted to a polymer-TI bilayer to result in significant electron density depletion, even without the continuous connection of a gate electrode or the chemical modification of the TI. We show that the Fermi level of Bi2 Se3 is shifted toward the Dirac point with this method. Using terahertz spectroscopy, we find that the surface chemical potential is lowered into the bulk band gap (approximately 50 meV above the Dirac point and 170 meV below the conduction-band minimum), and it is stabilized in the intrinsic regime while enhancing electron mobility. The mobility of surface state electrons is enhanced to a value as high as approximately 1600 cm2/V s at 5 K.

Optical Manipulation and Detection of Emergent Phenomena in Topological Insulators

Energy Technology Data Exchange (ETDEWEB)

Gedik, Nuh [Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States). Dept. of Physics

2017-02-17

The three-dimensional topological insulator (TI) is a new quantum phase of matter that exhibits quantum-Hall-like properties, even in the absence of an external magnetic field. These materials are insulators in the bulk but have a topologically protected conducting state at the surface. Charge carriers on these surface states behave like a two-dimensional gas of massless helical Dirac fermions for which the spin is ideally locked perpendicular to the momentum. The purpose of this project is to probe the unique collective electronic behaviors of topological insulators by developing and using advanced time resolved spectroscopic techniques with state-of-the-art temporal and spatial resolutions. The nature of these materials requires development of specialized ultrafast techniques (such as time resolved ARPES that also has spin detection capability, ultrafast electron diffraction that has sub-100 fs time resolution and THz magneto-spectroscopy). The focus of this report is to detail our achievements in terms of establishing state of the art experimental facilities. Below, we will describe achievements under this award for the entire duration of five years. We will focus on detailing the development of ultrafast technqiues here. The details of the science that was done with these technqiues can be found in the publications referencing this grant.

Modern ICT Tools: Online Electronic Resources Sharing Using Web ...

African Journals Online (AJOL)

Modern ICT Tools: Online Electronic Resources Sharing Using Web 2.0 and Its Implications For Library And Information Practice In Nigeria. ... The PDF file you selected should load here if your Web browser has a PDF reader plug-in installed (for example, a recent version of Adobe Acrobat Reader). If you would like more ...

Bandgap modulation in photoexcited topological insulator Bi{sub 2}Te{sub 3} via atomic displacements

Energy Technology Data Exchange (ETDEWEB)

Hada, Masaki, E-mail: hadamasaki@okayama-u.ac.jp [Graduate School of Natural Science and Technology, Okayama University, Okayama 700-8530 (Japan); Materials and Structures Laboratory, Tokyo Institute of Technology, Yokohama 226-8503 (Japan); PRESTO, Japan Science and Technology Agency, Kawaguchi 332-0012 (Japan); Norimatsu, Katsura; Tsuruta, Tetsuya; Igarashi, Kyushiro; Kayanuma, Yosuke; Sasagawa, Takao; Nakamura, Kazutaka G. [Materials and Structures Laboratory, Tokyo Institute of Technology, Yokohama 226-8503 (Japan); Tanaka, Sei' ichi; Ishikawa, Tadahiko; Koshihara, Shin-ya [Department of Chemistry and Materials Science, Tokyo Institute of Technology, Tokyo 152-8551 (Japan); Keskin, Sercan [The Max Planck Institute for the Structure and Dynamics of Matter, The Hamburg Centre for Ultrafast Imaging, University of Hamburg, Hamburg 22761 (Germany); Miller, R. J. Dwayne [The Max Planck Institute for the Structure and Dynamics of Matter, The Hamburg Centre for Ultrafast Imaging, University of Hamburg, Hamburg 22761 (Germany); Departments of Chemistry and Physics, University of Toronto, Toronto M5S 3H6 (Canada); Onda, Ken [PRESTO, Japan Science and Technology Agency, Kawaguchi 332-0012 (Japan); Graduate School of Science and Engineering, Tokyo Institute of Technology, Yokohama 226-8502 (Japan)

2016-07-14

The atomic and electronic dynamics in the topological insulator (TI) Bi{sub 2}Te{sub 3} under strong photoexcitation were characterized with time-resolved electron diffraction and time-resolved mid-infrared spectroscopy. Three-dimensional TIs characterized as bulk insulators with an electronic conduction surface band have shown a variety of exotic responses in terms of electronic transport when observed under conditions of applied pressure, magnetic field, or circularly polarized light. However, the atomic motions and their correlation between electronic systems in TIs under strong photoexcitation have not been explored. The artificial and transient modification of the electronic structures in TIs via photoinduced atomic motions represents a novel mechanism for providing a comparable level of bandgap control. The results of time-domain crystallography indicate that photoexcitation induces two-step atomic motions: first bismuth and then tellurium center-symmetric displacements. These atomic motions in Bi{sub 2}Te{sub 3} trigger 10% bulk bandgap narrowing, which is consistent with the time-resolved mid-infrared spectroscopy results.

2D-ACAR spectra of insulating and superconducting Y-123

International Nuclear Information System (INIS)

Smedskjaer, L.C.; Bansil, A.

1992-09-01

An overview of the two-dimensional angular correlation (2D-ACAR) positron annihilation results for the three fundamental phases of YBa 2 Cu 3 O x , namely, the normal metal, the superconductor, and the insulator, is presented. In addition to the c-axis projected momentum density, the recent results for the a-axis projection as well as the insulating Y123 are discussed. The experimental results are compared and contrasted with the corresponding band theory predictions as far as possible in order to gain insight into the electronic structure and Fermiology of this archetypal high-T c superconductor

Determination of the characteristics of an electric arc plasma contaminated by vapors from insulators

International Nuclear Information System (INIS)

Abbaoui, M.; Cheminat, B.

1991-01-01

An experimental study at atmospheric pressure carried out on plasma penetrated by vapors from different industrial insulators allowed the showing of the influence of the nature of the insulator upon the characteristics of the electric arc plasma; i.e., an increase of the temperature, electron density, electric field, and extinction velocity of the arc. Measurements have been made spectrometrically and by means of probes

Passive Collecting of Solar Radiation Energy using Transparent Thermal Insulators, Energetic Efficiency of Transparent Thermal Insulators

Directory of Open Access Journals (Sweden)

Smajo Sulejmanovic

2014-11-01

Full Text Available This paper explains passive collection of solar radiation energy using transparent thermal insulators. Transparent thermal insulators are transparent for sunlight, at the same time those are very good thermal insulators. Transparent thermal insulators can be placed instead of standard conventional thermal insulators and additionally transparent insulators can capture solar radiation, transform it into heat and save heat just as standard insulators. Using transparent insulators would lead to reduce in usage of fossil fuels and would help protection of an environment and reduce effects of global warming, etc.

Reorganization energy upon charging a single molecule on an insulator measured by atomic force microscopy

Science.gov (United States)

Fatayer, Shadi; Schuler, Bruno; Steurer, Wolfram; Scivetti, Ivan; Repp, Jascha; Gross, Leo; Persson, Mats; Meyer, Gerhard

2018-05-01

Intermolecular single-electron transfer on electrically insulating films is a key process in molecular electronics1-4 and an important example of a redox reaction5,6. Electron-transfer rates in molecular systems depend on a few fundamental parameters, such as interadsorbate distance, temperature and, in particular, the Marcus reorganization energy7. This crucial parameter is the energy gain that results from the distortion of the equilibrium nuclear geometry in the molecule and its environment on charging8,9. The substrate, especially ionic films10, can have an important influence on the reorganization energy11,12. Reorganization energies are measured in electrochemistry13 as well as with optical14,15 and photoemission spectroscopies16,17, but not at the single-molecule limit and nor on insulating surfaces. Atomic force microscopy (AFM), with single-charge sensitivity18-22, atomic-scale spatial resolution20 and operable on insulating films, overcomes these challenges. Here, we investigate redox reactions of single naphthalocyanine (NPc) molecules on multilayered NaCl films. Employing the atomic force microscope as an ultralow current meter allows us to measure the differential conductance related to transitions between two charge states in both directions. Thereby, the reorganization energy of NPc on NaCl is determined as (0.8 ± 0.2) eV, and density functional theory (DFT) calculations provide the atomistic picture of the nuclear relaxations on charging. Our approach presents a route to perform tunnelling spectroscopy of single adsorbates on insulating substrates and provides insight into single-electron intermolecular transport.

Excitonic metal-insulator phase transition of the Mott type in compressed calcium

Science.gov (United States)

Voronkova, T. O.; Sarry, A. M.; Sarry, M. F.; Skidan, S. G.

2017-05-01

It has been experimentally found that, under the static compression of a calcium crystal at room temperature, it undergoes a series of structural phase transitions: face-centered cubic lattice → body-centered cubic lattice → simple cubic lattice. It has been decided to investigate precisely the simple cubic lattice (because it is an alternative lattice) with the aim of elucidating the possibility of the existence of other (nonstructural) phase transitions in it by using for this purpose the Hubbard model for electrons with half-filled ns-bands and preliminarily transforming the initial electronic system into an electron-hole system by means of the known Shiba operators (applicable only to alternative lattices). This transformation leads to the fact that, in the new system of fermions, instead of the former repulsion, there is an attraction between electrons and holes. Elementary excitations of this new system are bound boson pairs—excitons. This system of fermions has been quantitatively analyzed by jointly using the equation-of-motion method and the direct algebraic method. The numerical integration of the analytically exact transcendental equations derived from the first principles for alternative (one-, two-, and three-dimensional) lattices has demonstrated that, in systems of two-species (electrons + hole) fermions, temperature-induced metal-insulator phase transitions of the Mott type are actually possible. Moreover, all these crystals are in fact excitonic insulators. This conclusion is in complete agreement with the analytically exact calculations of the ground state of a one-dimensional crystal (with half-filled bands), which were performed by Lieb and Wu with the aim to find out the Mott insulator-metal transition of another type.

Depolarization current relaxation process of insulating dielectrics after corona poling under different charging conditions

Directory of Open Access Journals (Sweden)

J. W. Zhang

2017-10-01

Full Text Available As an insulating dielectric, polyimide is favorable for the application of optoelectronics, electrical insulation system in electric power industry, insulating, and packaging materials in space aircraft, due to its excellent thermal, mechanical and electrical insulating stability. The charge storage profile of such insulating dielectric is utmost important to its application, when it is exposed to electron irradiation, high voltage corona discharge or other treatments. These treatments could induce changes in physical and chemical properties of treated samples. To investigate the charge storage mechanism of the insulating dielectrics after high-voltage corona discharge, the relaxation processes responsible for corona charged polyimide films under different poling conditions were analyzed by the Thermally Stimulated Discharge Currents method (TSDC. In the results of thermal relaxation process, the appearance of various peaks in TSDC spectra provided a deep insight into the molecular status in the dielectric material and reflected stored space charge relaxation process in the insulating polymers after corona discharge treatments. Furthermore, the different space charge distribution status under various poling temperature and different discharge voltage level were also investigated, which could partly reflect the influence of the ambiance condition on the functional dielectrics after corona poling.

Depolarization current relaxation process of insulating dielectrics after corona poling under different charging conditions

Science.gov (United States)

Zhang, J. W.; Zhou, T. C.; Wang, J. X.; Yang, X. F.; Zhu, F.; Tian, L. M.; Liu, R. T.

2017-10-01

As an insulating dielectric, polyimide is favorable for the application of optoelectronics, electrical insulation system in electric power industry, insulating, and packaging materials in space aircraft, due to its excellent thermal, mechanical and electrical insulating stability. The charge storage profile of such insulating dielectric is utmost important to its application, when it is exposed to electron irradiation, high voltage corona discharge or other treatments. These treatments could induce changes in physical and chemical properties of treated samples. To investigate the charge storage mechanism of the insulating dielectrics after high-voltage corona discharge, the relaxation processes responsible for corona charged polyimide films under different poling conditions were analyzed by the Thermally Stimulated Discharge Currents method (TSDC). In the results of thermal relaxation process, the appearance of various peaks in TSDC spectra provided a deep insight into the molecular status in the dielectric material and reflected stored space charge relaxation process in the insulating polymers after corona discharge treatments. Furthermore, the different space charge distribution status under various poling temperature and different discharge voltage level were also investigated, which could partly reflect the influence of the ambiance condition on the functional dielectrics after corona poling.

THE MODEL OF LINGUISTIC TEACHERS’ COMPETENCY DEVELOPMENT ON DESIGNING MULTIMEDIA ELECTRONIC EDUCATIONAL RESOURCES IN THE MOODLE SYSTEM

Directory of Open Access Journals (Sweden)

Anton M. Avramchuk

2017-10-01

Full Text Available The article is devoted to the problem of developing the competency of teachers of language disciplines on designing multimedia electronic educational resources in the Moodle system. The concept of "the competence of teachers of language disciplines on designing multimedia electronic educational resources in the Moodle system" is justified and defined. Identified and characterized the components by which the levels of the competency development of teachers of language disciplines on designing multimedia electronic educational resources in the Moodle system should be assessed. Developed a model for the development of the competency of teachers of language disciplines on designing multimedia electronic educational resources in the Moodle system, which is based on the main scientific approaches, used in adult education, and consists of five blocks: target, informative, technological, diagnostic and effective.

Developing Humanities Collections in the Digital Age: Exploring Humanities Faculty Engagement with Electronic and Print Resources

Science.gov (United States)

Kachaluba, Sarah Buck; Brady, Jessica Evans; Critten, Jessica

2014-01-01

This article is based on quantitative and qualitative research examining humanities scholars' understandings of the advantages and disadvantages of print versus electronic information resources. It explores how humanities' faculty members at Florida State University (FSU) use print and electronic resources, as well as how they perceive these…

Self-Healing Wire Insulation

Science.gov (United States)

Parrish, Clyde F. (Inventor)

2012-01-01

A self-healing system for an insulation material initiates a self-repair process by rupturing a plurality of microcapsules disposed on the insulation material. When the plurality of microcapsules are ruptured, reactants within the plurality of microcapsules react to form a replacement polymer in a break of the insulation material. This self-healing system has the ability to repair multiple breaks in a length of insulation material without exhausting the repair properties of the material.

Axial grazing collisions with insulator surfaces

Energy Technology Data Exchange (ETDEWEB)

Gravielle, M.S. [Instituto de Astronomia y Fisica del Espacio (IAFE), Consejo Nacional de Investigaciones Cientificas y Tecnicas, Casilla de Correo 67, Sucursal 28, 1428 Buenos Aires (Argentina) and Departamento de Fisica, FCEN, Universidad de Buenos Aires (Argentina)]. E-mail: msilvia@iafe.uba.ar; Miraglia, J.E. [Instituto de Astronomia y Fisica del Espacio (IAFE), Consejo Nacional de Investigaciones Cientificas y Tecnicas, Casilla de Correo 67, Sucursal 28, 1428 Buenos Aires (Argentina); Departamento de Fisica, FCEN, Universidad de Buenos Aires (Argentina)

2007-05-15

Electron capture and emission processes from insulator surfaces produced by grazing impact of fast ions are investigated under axial incidence conditions. For crystal surfaces we develop a model based on distorted wave methods, which allows us to express the coherent transition amplitude along the projectile path as a sum of atomic amplitudes, each one associated with a different lattice site. The method is applied to 100 keV protons colliding with LiF surfaces. For electron transitions from a given initial crystal state, the probabilities display strong interference effects as a function of the crystal orientation. But the interference patterns disappear when these partial probabilities are added to derive the total probability from the surface band.

Axial grazing collisions with insulator surfaces

International Nuclear Information System (INIS)

Gravielle, M.S.; Miraglia, J.E.

2007-01-01

Electron capture and emission processes from insulator surfaces produced by grazing impact of fast ions are investigated under axial incidence conditions. For crystal surfaces we develop a model based on distorted wave methods, which allows us to express the coherent transition amplitude along the projectile path as a sum of atomic amplitudes, each one associated with a different lattice site. The method is applied to 100 keV protons colliding with LiF surfaces. For electron transitions from a given initial crystal state, the probabilities display strong interference effects as a function of the crystal orientation. But the interference patterns disappear when these partial probabilities are added to derive the total probability from the surface band

Optimization of the vacuum insulator stack of the MIG pulsed power generator

International Nuclear Information System (INIS)

Khamzakhan, G; Chaikovsky, S A

2014-01-01

The MIG multi-purpose pulsed power machine is intended to generate voltage pulses of amplitude up to 6 MV with electron-beam loads and current pulses of amplitude up to 2.5 MA and rise time '00 ns with inductive loads like Z pinches. The MIG generator is capable of producing a peak power of 2.5 TW. Its water transmission line is separated from the vacuum line by an insulator stack. In the existing design of the insulator, some malfunctions have been detected. The most serious problems revealed are the vacuum surface flashover occurring before the current peaks and the deep discharge traces on the water-polyethylene interface of the two rings placed closer to the ground. A comprehensive numerical simulation of the electric field distribution in the insulator of the MIG generator has been performed. It has been found that the chief drawbacks are nonuniform voltage grading across the insulator rings and significant enhancement of the electric field at anode triple junctions. An improved design of the insulator stack has been developed. It is expected that the proposed modification that requires no rearrangement of either the water line or the load-containing vacuum chamber will provide higher electric strength of the insulator

Wide gap Chern Mott insulating phases achieved by design

Science.gov (United States)

Guo, Hongli; Gangopadhyay, Shruba; Köksal, Okan; Pentcheva, Rossitza; Pickett, Warren E.

2017-12-01

Quantum anomalous Hall insulators, which display robust boundary charge and spin currents categorized in terms of a bulk topological invariant known as the Chern number (Thouless et al Phys. Rev. Lett. 49, 405-408 (1982)), provide the quantum Hall anomalous effect without an applied magnetic field. Chern insulators are attracting interest both as a novel electronic phase and for their novel and potentially useful boundary charge and spin currents. Honeycomb lattice systems such as we discuss here, occupied by heavy transition-metal ions, have been proposed as Chern insulators, but finding a concrete example has been challenging due to an assortment of broken symmetry phases that thwart the topological character. Building on accumulated knowledge of the behavior of the 3d series, we tune spin-orbit and interaction strength together with strain to design two Chern insulator systems with bandgaps up to 130 meV and Chern numbers C = -1 and C = 2. We find, in this class, that a trade-off between larger spin-orbit coupling and strong interactions leads to a larger gap, whereas the stronger spin-orbit coupling correlates with the larger magnitude of the Hall conductivity. Symmetry lowering in the course of structural relaxation hampers obtaining quantum anomalous Hall character, as pointed out previously; there is only mild structural symmetry breaking of the bilayer in these robust Chern phases. Recent growth of insulating, magnetic phases in closely related materials with this orientation supports the likelihood that synthesis and exploitation will follow.

Insulator-semiconductor interface fixed charges in AlGaN/GaN metal-insulator-semiconductor devices with Al2O3 or AlTiO gate dielectrics

Science.gov (United States)

Le, Son Phuong; Nguyen, Duong Dai; Suzuki, Toshi-kazu

2018-01-01

We have investigated insulator-semiconductor interface fixed charges in AlGaN/GaN metal-insulator-semiconductor (MIS) devices with Al2O3 or AlTiO (an alloy of Al2O3 and TiO2) gate dielectrics obtained by atomic layer deposition on AlGaN. Analyzing insulator-thickness dependences of threshold voltages for the MIS devices, we evaluated positive interface fixed charges, whose density at the AlTiO/AlGaN interface is significantly lower than that at the Al2O3/AlGaN interface. This and a higher dielectric constant of AlTiO lead to rather shallower threshold voltages for the AlTiO gate dielectric than for Al2O3. The lower interface fixed charge density also leads to the fact that the two-dimensional electron concentration is a decreasing function of the insulator thickness for AlTiO, whereas being an increasing function for Al2O3. Moreover, we discuss the relationship between the interface fixed charges and interface states. From the conductance method, it is shown that the interface state densities are very similar at the Al2O3/AlGaN and AlTiO/AlGaN interfaces. Therefore, we consider that the lower AlTiO/AlGaN interface fixed charge density is not owing to electrons trapped at deep interface states compensating the positive fixed charges and can be attributed to a lower density of oxygen-related interface donors.

Importance of space-time fluctuations and non-linearities for the transport inside insulating glasses

International Nuclear Information System (INIS)

Ladieu, F.

2003-07-01

This work deals with transport in insulating glasses. In such solids, the discrete translational symmetry is lost, which means that the plane wave analysis is not a priori the right 'starting point'. As a result, the transport is more difficult to handle, and a huge amount of works have been devoted to many aspects of transport in disordered systems, especially since the seventies. Here we focus on three specific questions: (i) the heat transport in glasses submitted to micro-beams and the associated irreversible vaporization; (ii) the electronic d.c. transport, below 1 Kelvin, in Mott-Anderson insulators, i.e. in 'electron glasses' where both disorder and electron-electron interactions are relevant; (iii) the low frequency dielectric constant in 'structural glasses' (i.e. 'ordinary glasses') which, below 1 Kelvin, is both universal (i.e. independent on the chemical composition) and very different of that of crystals. For each topic, we present both original experiments and the new theoretical concepts that we have elaborated so as to understand the main experimental features. Eventually, it appears that, in any case, transport in insulating glasses is strongly dominated by quite a small part of the 'glass-applied field' ensemble and that the nonlinear response is a relevant tool to get informations on this 'sub-part' which dominates the transport in the whole system. (author)

Specular Andreev reflection in thin films of topological insulators

Science.gov (United States)

Majidi, Leyla; Asgari, Reza

2016-05-01

We theoretically reveal the possibility of specular Andreev reflection in a thin film topological insulator normal-superconductor (N/S) junction in the presence of a gate electric field. The probability of specular Andreev reflection increases with the electric field, and electron-hole conversion with unit efficiency happens in a wide experimentally accessible range of the electric field. We show that perfect specular Andreev reflection can occur for all angles of incidence with a particular excitation energy value. In addition, we find that the thermal conductance of the structure displays exponential dependence on the temperature. Our results reveal the potential of the proposed topological insulator thin-film-based N/S structure for the realization of intraband specular Andreev reflection.

Thermally insulating and fire-retardant lightweight anisotropic foams based on nanocellulose and graphene oxide

Science.gov (United States)

Wicklein, Bernd; Kocjan, Andraž; Salazar-Alvarez, German; Carosio, Federico; Camino, Giovanni; Antonietti, Markus; Bergström, Lennart

2015-03-01

High-performance thermally insulating materials from renewable resources are needed to improve the energy efficiency of buildings. Traditional fossil-fuel-derived insulation materials such as expanded polystyrene and polyurethane have thermal conductivities that are too high for retrofitting or for building new, surface-efficient passive houses. Tailored materials such as aerogels and vacuum insulating panels are fragile and susceptible to perforation. Here, we show that freeze-casting suspensions of cellulose nanofibres, graphene oxide and sepiolite nanorods produces super-insulating, fire-retardant and strong anisotropic foams that perform better than traditional polymer-based insulating materials. The foams are ultralight, show excellent combustion resistance and exhibit a thermal conductivity of 15 mW m-1 K-1, which is about half that of expanded polystyrene. At 30 °C and 85% relative humidity, the foams retained more than half of their initial strength. Our results show that nanoscale engineering is a promising strategy for producing foams with excellent properties using cellulose and other renewable nanosized fibrous materials.

Radial space-charge-limited electron flow in semi-insulating GaN:Fe

Czech Academy of Sciences Publication Activity Database

Mareš, Jiří J.; Hubík, Pavel; Krištofik, Jozef; Prušáková, Lucie; Uxa, Štěpán; Paskova, T.; Evans, K.

2011-01-01

Roč. 110, č. 1 (2011), 013723/1-013723/6 ISSN 0021-8979 R&D Projects: GA ČR GAP204/10/0212 Institutional research plan: CEZ:AV0Z10100521 Keywords : gallium nitride * semi-insulator * space-charge-limited current Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.168, year: 2011

A quantized microwave quadrupole insulator with topologically protected corner states

Science.gov (United States)

Peterson, Christopher W.; Benalcazar, Wladimir A.; Hughes, Taylor L.; Bahl, Gaurav

2018-03-01

The theory of electric polarization in crystals defines the dipole moment of an insulator in terms of a Berry phase (geometric phase) associated with its electronic ground state. This concept not only solves the long-standing puzzle of how to calculate dipole moments in crystals, but also explains topological band structures in insulators and superconductors, including the quantum anomalous Hall insulator and the quantum spin Hall insulator, as well as quantized adiabatic pumping processes. A recent theoretical study has extended the Berry phase framework to also account for higher electric multipole moments, revealing the existence of higher-order topological phases that have not previously been observed. Here we demonstrate experimentally a member of this predicted class of materials—a quantized quadrupole topological insulator—produced using a gigahertz-frequency reconfigurable microwave circuit. We confirm the non-trivial topological phase using spectroscopic measurements and by identifying corner states that result from the bulk topology. In addition, we test the critical prediction that these corner states are protected by the topology of the bulk, and are not due to surface artefacts, by deforming the edges of the crystal lattice from the topological to the trivial regime. Our results provide conclusive evidence of a unique form of robustness against disorder and deformation, which is characteristic of higher-order topological insulators.

The effects of illumination on deep levels observed in as-grown and low-energy electron irradiated high-purity semi-insulating 4H-SiC

Science.gov (United States)

Alfieri, G.; Knoll, L.; Kranz, L.; Sundaramoorthy, V.

2018-05-01

High-purity semi-insulating 4H-SiC can find a variety of applications, ranging from power electronics to quantum computing applications. However, data on the electronic properties of deep levels in this material are scarce. For this reason, we present a deep level transient spectroscopy study on HPSI 4H-SiC substrates, both as-grown and irradiated with low-energy electrons (to displace only C-atoms). Our investigation reveals the presence of four deep levels with activation energies in the 0.4-0.9 eV range. The concentrations of three of these levels increase by at least one order of magnitude after irradiation. Furthermore, we analyzed the behavior of these traps under sub- and above-band gap illumination. The nature of the traps is discussed in the light of the present data and results reported in the literature.

Fabrication of insulator nanocapillaries from diatoms

International Nuclear Information System (INIS)

Bereczky, R.J.; Tokesi, K.

2006-01-01

Complete text of publication follows. Diatoms are unicellular microscopic organisms with silicon-dioxide based skeleton enveloped with an organic material, which composes essentially polysaccharides and proteins (see Fig. 1a.). As it was shown, the valva of the diatoms build up almost from clean silicondioxide [1]. Therefore, removing the organic compounds from the diatom, we can have in our hand an ideal, about 100 μ m-sized, and almost cylindrical shaped insulating nanostructure. There are various techniques available to disembarrass the diatom from its organic compounds. We used the so called hydrogen peroxide method. The advantageous properties of this method are the followings: a) this is one of the fastest procedures among the possible methods, b) do not require special equipment, c) cheap, and last but not least it is less harmful for health compared to other methods. This procedure can be an alternative way of the fabrication of insulator nanocapillaries. In this case the preparation of the nanocapillaries is simple and quick. Moreover, we do not need to invest expensive special techniques, (like micromachining-, electrochemical etching technique, moulding process etc) as it was necessary for the case of previously developed method producing insulator nanocapillaries [2,3]. Fig. 1b and Fig. 1c. show the scanning electron micrograph of the skeleton of the diatoms. The size of the cylindrical holes are roughly 200 nm (see Fig. 1c). (author)

Heat insulation support device

International Nuclear Information System (INIS)

Takahashi, Hiroyuki; Koda, Tomokazu; Motojima, Osamu; Yamamoto, Junya.

1994-01-01

The device of the present invention comprises a plurality of heat insulation legs disposed in a circumferential direction. Each of the heat insulative support legs has a hollow shape, and comprises an outer column and an inner column as support structures having a heat insulative property (heat insulative structure), and a thermal anchor which absorbs compulsory displacement by a thin flat plate (displacement absorber). The outer column, the thermal anchor and the inner column are connected by a support so as to offset the positional change of objects to be supported due to shrinkage when they are shrunk. In addition, the portion between the superconductive coils as the objects to be supported and the inner column is connected by the support. The superconductive thermonuclear device is entirely contained in a heat insulative vacuum vessel, and the heat insulative support legs are disposed on a lower lid of the heat insulative vacuum vessel. With such a constitution, they are strengthened against lateral load and buckling, thereby enabling to reduce the amount of heat intrusion while keeping the compulsory displacement easy to be absorbed. (I.N.)

Economically optimal thermal insulation

Energy Technology Data Exchange (ETDEWEB)

Berber, J.

1978-10-01

Exemplary calculations to show that exact adherence to the demands of the thermal insulation ordinance does not lead to an optimal solution with regard to economics. This is independent of the mode of financing. Optimal thermal insulation exceeds the values given in the thermal insulation ordinance.

Electronic resource management systems a workflow approach

CERN Document Server

Anderson, Elsa K

2014-01-01

To get to the bottom of a successful approach to Electronic Resource Management (ERM), Anderson interviewed staff at 11 institutions about their ERM implementations. Among her conclusions, presented in this issue of Library Technology Reports, is that grasping the intricacies of your workflow-analyzing each step to reveal the gaps and problems-at the beginning is crucial to selecting and implementing an ERM. Whether the system will be used to fill a gap, aggregate critical data, or replace a tedious manual process, the best solution for your library depends on factors such as your current soft

Panels of microporous insulation

Energy Technology Data Exchange (ETDEWEB)

McWilliams, J.A.; Morgan, D.E.; Jackson, J.D.J.

1990-08-07

Microporous thermal insulation materials have a lattice structure in which the average interstitial dimension is less than the mean free path of the molecules of air or other gas in which the material is arranged. This results in a heat flow which is less than that attributable to the molecular heat diffusion of the gas. According to this invention, a method is provided for manufacturing panels of microporous thermal insulation, in particular such panels in which the insulation material is bonded to a substrate. The method comprises the steps of applying a film of polyvinyl acetate emulsion to a non-porous substrate, and compacting powdery microporous thermal insulation material against the film so as to cause the consolidated insulation material to bond to the substrate and form a panel. The polyvinyl acetate may be applied by brushing or spraying, and is preferably allowed to dry prior to compacting the insulation material. 1 fig.

Total dose hardening of buried insulator in implanted silicon-on-insulator structures

International Nuclear Information System (INIS)

Mao, B.Y.; Chen, C.E.; Pollack, G.; Hughes, H.L.; Davis, G.E.

1987-01-01

Total dose characteristics of the buried insulator in implanted silicon-on-insulator (SOI) substrates have been studied using MOS transistors. The threshold voltage shift of the parasitic back channel transistor, which is controlled by charge trapping in the buried insulator, is reduced by lowering the oxygen dose as well as by an additional nitrogen implant, without degrading the front channel transistor characteristics. The improvements in the radiation characteristics of the buried insulator are attributed to the decrease in the buried oxide thickness or to the presence of the interfacial oxynitride layer formed by the oxygen and nitrogen implants

Electronic Resource Management System. Vernetzung von Lizenzinformationen

Directory of Open Access Journals (Sweden)

Michaela Selbach

2014-12-01

Full Text Available In den letzten zehn Jahren spielen elektronische Ressourcen im Bereich der Erwerbung eine zunehmend wichtige Rolle: Eindeutig lässt sich hier ein Wandel in den Bibliotheken (fort vom reinen Printbestand zu immer größeren E-Only-Beständen feststellen. Die stetig wachsende Menge an E-Ressourcen und deren Heterogenität stellt Bibliotheken vor die Herausforderung, die E-Ressourcen effizient zu verwalten. Nicht nur Bibliotheken, sondern auch verhandlungsführende Institutionen von Konsortial- und Allianzlizenzen benötigen ein geeignetes Instrument zur Verwaltung von Lizenzinformationen, welches den komplexen Anforderungen moderner E-Ressourcen gerecht wird. Die Deutsche Forschungsgemeinschaft (DFG unterstützt ein Projekt des Hochschulbibliothekszentrums des Landes Nordrhein-Westfalen (hbz, der Universitätsbibliothek Freiburg, der Verbundzentrale des Gemeinsamen Bibliotheksverbundes (GBV und der Universitätsbibliothek Frankfurt, in dem ein bundesweit verfügbares Electronic Ressource Managementsystem (ERMS aufgebaut werden soll. Ein solches ERMS soll auf Basis einer zentralen Knowledge Base eine einheitliche Nutzung von Daten zur Lizenzverwaltung elektronischer Ressourcen auf lokaler, regionaler und nationaler Ebene ermöglichen. Statistische Auswertungen, Rechteverwaltung für alle angeschlossenen Bibliotheken, kooperative Datenpflege sowie ein über standardisierte Schnittstellen geführter Datenaustausch stehen bei der Erarbeitung der Anforderungen ebenso im Fokus wie die Entwicklung eines Daten- und Funktionsmodells. In the last few years the importance of electronic resources in library acquisitions has increased significantly. There has been a shift from mere print holdings to both e- and print combinations and even e-only subscriptions. This shift poses a double challenge for libraries: On the one hand they have to provide their e-resource collections to library users in an appealing way, on the other hand they have to manage these

Impedance of an annular-cathode indented-anode electron diode terminating a coaxial magnetically insulated transmission line

International Nuclear Information System (INIS)

Sanford, T.W.L.; Poukey, J.W.; Wright, T.P.; Bailey, J.; Heath, C.E.; Mock, R.; Spence, P.W.; Fockler, J.; Kishi, H.

1988-01-01

The impedance of a diode having an annular cathode and indented anode that terminates a coaxial MITL (magnetically insulated transmission line) is measured and compared with a semiempirical model developed from calculations made using the magIc code. The measurements were made on the 16-Ω electron accelerator HELIA (high-energy linear induction accelerator) operating at 3 MV. The model agrees with the measurements within the 10% measuring error and shows that the diode operates in either a load- or line-dominated regime depending on AK (anode-cathode) gap spacing. In the load-dominated regime, which corresponds to small AK gaps, the diode impedance is controlled by an effective anode-cathode gap, and the flow is approximately axial. In the line-dominated regime, which corresponds to large AK gaps, the impedance is independent of the AK gap and corresponds to the impedance associated with the minimum current solution of the MITL, with the flow becoming more radial as the AK gap is increased

Survey of thermal insulation systems

International Nuclear Information System (INIS)

Kinoshita, Izumi

1983-01-01

Better thermal insulations have been developed to meet the growing demands of industry, and studies on thermal insulation at both high temperature and low temperature have been widely performed. The purpose of this survey is to summarize data on the performances and characteristics of thermal insulation materials and thermal insulation structures (for instance, gas cooled reactors, space vehicles and LNG storage tanks), and to discuss ravious problems regarding the design of thermal insulation structures of pool-type LMFBRs. (author)

Detection of UV Pulse from Insulators and Application in Estimating the Conditions of Insulators

Science.gov (United States)

Wang, Jingang; Chong, Junlong; Yang, Jie

2014-10-01

Solar radiation in the band of 240-280 nm is absorbed by the ozone layer in the atmosphere, and corona discharges from high-voltage apparatus emit in air mainly in the 230-405 nm range of ultraviolet (UV), so the band of 240-280 nm is called UV Solar Blind Band. When the insulators in a string deteriorate or are contaminated, the voltage distribution along the string will change, which causes the electric fields in the vicinity of insulators change and corona discharge intensifies. An UV pulse detection method to check the conditions of insulators is presented based on detecting the UV pulse among the corona discharge, then it can be confirmed that whether there exist faulty insulators and whether the surface contamination of insulators is severe for the safe operation of power systems. An UV-I Insulator Detector has been developed, and both laboratory tests and field tests have been carried out which demonstrates the practical viability of UV-I Insulator Detector for online monitoring.

Thermal insulation

International Nuclear Information System (INIS)

Pinsky, G.P.

1977-01-01

Thermal insulation for vessels and piping within the reactor containment area of nuclear power plants is disclosed. The thermal insulation of this invention can be readily removed and replaced from the vessels and piping for inservice inspection, can withstand repeated wettings and dryings, and can resist high temperatures for long periods of time. 4 claims, 3 figures

Electronic Structure of the Metastable Epitaxial Rock-Salt SnSe {111} Topological Crystalline Insulator

Directory of Open Access Journals (Sweden)

Wencan Jin

2017-10-01

Full Text Available Topological crystalline insulators have been recently predicted and observed in rock-salt structure SnSe {111} thin films. Previous studies have suggested that the Se-terminated surface of this thin film with hydrogen passivation has a reduced surface energy and is thus a preferred configuration. In this paper, synchrotron-based angle-resolved photoemission spectroscopy, along with density functional theory calculations, is used to demonstrate that a rock-salt SnSe {111} thin film epitaxially grown on Bi_{2}Se_{3} has a stable Sn-terminated surface. These observations are supported by low-energy electron diffraction (LEED intensity-voltage measurements and dynamical LEED calculations, which further show that the Sn-terminated SnSe {111} thin film has undergone a surface structural relaxation of the interlayer spacing between the Sn and Se atomic planes. In sharp contrast to the Se-terminated counterpart, the observed Dirac surface state in the Sn-terminated SnSe {111} thin film is shown to yield a high Fermi velocity, 0.50×10^{6}  m/s, which suggests a potential mechanism of engineering the Dirac surface state of topological materials by tuning the surface configuration.

Application of magnetically insulated transmission lines for high current, high voltage electron beam accelerators

International Nuclear Information System (INIS)

Shope, S.L.; Mazarakis, M.G.; Frost, C.A.; Poukey, J.W.; Turman, B.N.

1993-01-01

Self Magnetically Insulated Transmission Lines (MITL) adders have been used successfully in a number of Sandia accelerators such as HELIA, HERMES III, and SABRE. Most recently the authors used a MITL adder in the RADLAC/SMILE electron beam accelerator to produce high quality, small radius (r b < 2 cm), 11 to 15 MeV, 50 to 100-kA beams with a small transverse velocity v perpendicular/c = β perpendicular ≤ 0.1. In RADLAC/SMILE, a coaxial MITL passed through the eight, 2 MV vacuum envelopes. The MITL summed the voltages of all eight feeds to a single foilless diode. The experimental results are in good agreement with code simulations. The authors' success with the MITL technology led them to investigate the application to higher energy accelerator designs. They have a conceptual design for a cavity-fed MITL that sums the voltages from 100 identical, inductively-isolated cavities. Each cavity is a toroidal structure that is driven simultaneously by four 8-ohm pulse-forming lines, providing a 1-MV voltage pulse to each of the 100 cavities. The point design accelerator is 100 MV, 500 kA, with a 30-50-ns FWHM output pulse

Application of Magnetically Insulated Transmission Lines for high current, high voltage electron beam accelerators

International Nuclear Information System (INIS)

Shope, S.L.; Mazarakis, M.G.; Frost, C.A.; Poukey, J.W.; Turman, B.N.

1991-01-01

Self Magnetically Insulated Transmission Lines (MITL) adders have been used successfully in a number of Sandia accelerators such as HELIA, HERMES III, and SABRE. Most recently we used at MITL adder in the RADLAC/SMILE electron beam accelerator to produce high quality, small radius (r ρ < 2 cm), 11 to 15 MeV, 50 to 100-kA beams with a small transverse velocity v perpendicular/c = β perpendicular ≤ 0.1. In RADLAC/SMILE, a coaxial MITL passed through the eight, 2 MV vacuum envelopes. The MITL summed the voltages of all eight feeds to a single foilless diode. The experimental results are in good agreement with code simulations. Our success with the MITL technology led us to investigate the application to higher energy accelerator designs. We have a conceptual design for a cavity-fed MITL that sums the voltages from 100 identical, inductively-isolated cavities. Each cavity is a toroidal structure that is driven simultaneously by four 8-ohm pulse-forming lines, providing a 1-MV voltage pulse to each of the 100 cavities. The point design accelerator is 100 MV, 500 kA, with a 30--50 ns FWHM output pulse. 10 refs

Application of magnetically insulated transmission lines for high current, high voltage electron beam accelerators

Science.gov (United States)

Shope, S. L.; Mazarakis, M. G.; Frost, C. A.; Poukey, J. W.; Turman, B. N.

Self Magnetically Insulated Transmission Lines (MITL) adders were used successfully in a number of Sandia accelerators such as HELIA, HERMES III, and SABRE. Most recently we used at MITL adder in the RADLAC/SMILE electron beam accelerator to produce high quality, small radius (r(sub rho) less than 2 cm), 11 - 15 MeV, 50 - 100-kA beams with a small transverse velocity v(perpendicular)/c = beta(perpendicular) less than or equal to 0.1. In RADLAC/SMILE, a coaxial MITL passed through the eight, 2 MV vacuum envelopes. The MITL summed the voltages of all eight feeds to a single foilless diode. The experimental results are in good agreement with code simulations. Our success with the MITL technology led us to investigate the application to higher energy accelerator designs. We have a conceptual design for a cavity-fed MITL that sums the voltages from 100 identical, inductively-isolated cavities. Each cavity is a toroidal structure that is driven simultaneously by four 8-ohm pulse-forming lines, providing a 1-MV voltage pulse to each of the 100 cavities. The point design accelerator is 100 MV, 500 kA, with a 30 - 50 ns FWHM output pulse.

Wrapped Multilayer Insulation

Science.gov (United States)

Dye, Scott A.

2015-01-01

New NASA vehicles, such as Earth Departure Stage (EDS), Orion, landers, and orbiting fuel depots, need improved cryogenic propellant transfer and storage for long-duration missions. Current cryogen feed line multilayer insulation (MLI) performance is 10 times worse per area than tank MLI insulation. During each launch, cryogenic piping loses approximately 150,000 gallons (equivalent to $300,000) in boil-off during transfer, chill down, and ground hold. Quest Product Development Corp., teaming with Ball Aerospace, developed an innovative advanced insulation system, Wrapped MLI (wMLI), to provide improved thermal insulation for cryogenic feed lines. wMLI is high-performance multilayer insulation designed for cryogenic piping. It uses Quest's innovative discrete-spacer technology to control layer spacing/ density and reduce heat leak. The Phase I project successfully designed, built, and tested a wMLI prototype with a measured heat leak 3.6X lower than spiral-wrapped conventional MLI widely used for piping insulation. A wMLI prototype had a heat leak of 7.3 W/m2, or 27 percent of the heat leak of conventional MLI (26.7 W/m2). The Phase II project is further developing wMLI technology with custom, molded polymer spacers and advancing the product toward commercialization via a rigorous testing program, including developing advanced vacuuminsulated pipe for ground support equipment.

The Electron Microscopy Outreach Program: A Web-based resource for research and education.

Science.gov (United States)

Sosinsky, G E; Baker, T S; Hand, G; Ellisman, M H

1999-01-01

We have developed a centralized World Wide Web (WWW)-based environment that serves as a resource of software tools and expertise for biological electron microscopy. A major focus is molecular electron microscopy, but the site also includes information and links on structural biology at all levels of resolution. This site serves to help integrate or link structural biology techniques in accordance with user needs. The WWW site, called the Electron Microscopy (EM) Outreach Program (URL: http://emoutreach.sdsc.edu), provides scientists with computational and educational tools for their research and edification. In particular, we have set up a centralized resource containing course notes, references, and links to image analysis and three-dimensional reconstruction software for investigators wanting to learn about EM techniques either within or outside of their fields of expertise. Copyright 1999 Academic Press.

PROTO-II: a short pulse water insulated accelerator

International Nuclear Information System (INIS)

Martin, T.H.; VanDevender, J.P.; Johnson, D.L.; McDaniel, D.H.; Aker, M.

1975-01-01

A new accelerator, designated Proto-II, is presently under construction at Sandia Laboratories. Proto-II will have a nominal output of 100 kJ into a two-sided diode at a voltage of 1.5 MV and a total current of over 6 MA for 24 ns. This accelerator will be utilized for electron beam fusion experiments and for pulsed power and developmental studies leading to a proposed further factor of five scale-up in power. The design of Proto-II is based upon recent water switching developments and represents a 10-fold extrapolation of those results. Initial testing of Proto-II is scheduled to begin in 1976. Proto-II power flow starts with eight Marx generators which charge 16 water-insulated storage capacitors. Eight triggered, 3 MV, SF 6 gas-insulated switches next transfer the energy through oil-water interfaces into the first stage of 16 parallel lines. Next, the 16 first stages transfer their energy into the pulse forming lines and fast switching sections.The energy is then delivered to two converging, back-to-back, disk-shaped transmission line. Two back-to-back diodes then form the electron beams which are focused onto a common anode

Metal-insulator transition in SrTi1−xVxO3 thin films

International Nuclear Information System (INIS)

Gu, Man; Wolf, Stuart A.; Lu, Jiwei

2013-01-01

Epitaxial SrTi 1−x V x O 3 (0 ≤ x ≤ 1) thin films were grown on (001)-oriented (LaAlO 3 ) 0.3 (Sr 2 AlTaO 6 ) 0.7 (LSAT) substrates using the pulsed electron-beam deposition technique. The transport study revealed a temperature driven metal-insulator transition (MIT) at 95 K for x = 0.67. The films with higher vanadium concentration (x > 0.67) were metallic corresponding to a Fermi liquid system. In the insulating phase (x < 0.67), the resistivity behavior was governed by Mott's variable range hopping mechanism. The possible mechanisms for the induced MIT are discussed, including the effects of electron correlation, lattice distortion, and Anderson localization

Technical Communicator: A New Model for the Electronic Resources Librarian?

Science.gov (United States)

Hulseberg, Anna

2016-01-01

This article explores whether technical communicator is a useful model for electronic resources (ER) librarians. The fields of ER librarianship and technical communication (TC) originated and continue to develop in relation to evolving technologies. A review of the literature reveals four common themes for ER librarianship and TC. While the…

Calcium carbonate electronic-insulating layers improve the charge collection efficiency of tin oxide photoelectrodes in dye-sensitized solar cells

International Nuclear Information System (INIS)

Shaikh, Shoyebmohamad F.; Mane, Rajaram S.; Hwang, Yun Jeong; Joo, Oh-Shim

2015-01-01

In dye-sensitized solar cells (DSSCs), a surface passivation layer has been employed on the tin oxide (SnO 2 ) photoanodes to enhance the charge collection efficiency, and thus the power conversion efficiency. Herein, we demonstrate that the electronic-insulating layering of calcium carbonate (CaCO 3 ) can improve the charge collection efficiency in dye-sensitized solar cells designed with photoanodes. In order to evaluate the effectiveness of CaCO 3 layering, both layered and pristine SnO 2 photoanodes are characterized with regard to their structures, morphologies, and photo-electrochemical measurements. The SnO 2 -6L CaCO 3 photoanode has demonstrated as high as 3.5% power conversion efficiency; 3.5-fold greater than that of the pristine SnO 2 photoanode. The enhancement in the power conversion efficiency is corroborated with the number of the dye molecules, the passivation of surface states, a negative shift in the conduction band position, and the reduced electron recombination rate of photoelectrons following the coating of the CaCO 3 surface layer

Magnetically self-insulated transformers

International Nuclear Information System (INIS)

Novac, B.M.; Smith, I.R.; Brown, J.

2002-01-01

Magnetic insulation is the only practicable form of insulation for much equipment used in ultrahigh pulsed-power work, including transmission lines and plasma opening switches. It has not however so far been successfully exploited in the transformers that are necessarily involved, and the first proposed design that appeared more than 30 years ago raised apparently insuperable problems. The two novel arrangements for a magnetically insulated transformer described in this paper overcome the problems faced by the earlier designs and also offer considerable scope for development in a number of important areas. Theoretical justification is given for their insulating properties, and this is confirmed by proof-of-principle results obtained from a small-scale experimental prototype in which magnetic insulation was demonstrated at up to 100 kV. (author)

Molecular beam epitaxial growth of Bi{sub 2}Te{sub 3} and Sb{sub 2}Te{sub 3} topological insulators on GaAs (111) substrates: a potential route to fabricate topological insulator p-n junction

Energy Technology Data Exchange (ETDEWEB)

Zeng, Zhaoquan; Morgan, Timothy A.; Li, Chen; Hirono, Yusuke; Hu, Xian; Hawkridge, Michael E.; Benamara, Mourad; Salamo, Gregory J. [Arkansas Institute for Nanoscale Material Sciences and Engineering, University of Arkansas, Fayetteville, AR 72701 (United States); Fan, Dongsheng; Yu, Shuiqing [Arkansas Institute for Nanoscale Material Sciences and Engineering, University of Arkansas, Fayetteville, AR 72701 (United States); Department of Electrical Engineering, University of Arkansas, Fayetteville, AR 72701 (United States); Zhao, Yanfei [International Center for Quantum Materials, School of Physics, Peking University, Beijing, 100871 (China); Lee, Joon Sue [The Center for Nanoscale Science and Department of Physics, The Pennsylvania State University, University Park, PA 16802 (United States); Wang, Jian [International Center for Quantum Materials, School of Physics, Peking University, Beijing, 100871 (China); The Center for Nanoscale Science and Department of Physics, The Pennsylvania State University, University Park, PA 16802 (United States); Wang, Zhiming M. [Arkansas Institute for Nanoscale Material Sciences and Engineering, University of Arkansas, Fayetteville, AR 72701 (United States); State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054 (China); Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Science, Beijing 100083 (China)

2013-07-15

High quality Bi{sub 2}Te{sub 3} and Sb{sub 2}Te{sub 3} topological insulators films were epitaxially grown on GaAs (111) substrate using solid source molecular beam epitaxy. Their growth and behavior on both vicinal and non-vicinal GaAs (111) substrates were investigated by reflection high-energy electron diffraction, atomic force microscopy, X-ray diffraction, and high resolution transmission electron microscopy. It is found that non-vicinal GaAs (111) substrate is better than a vicinal substrate to provide high quality Bi{sub 2}Te{sub 3} and Sb{sub 2}Te{sub 3} films. Hall and magnetoresistance measurements indicate that p type Sb{sub 2}Te{sub 3} and n type Bi{sub 2}Te{sub 3} topological insulator films can be directly grown on a GaAs (111) substrate, which may pave a way to fabricate topological insulator p-n junction on the same substrate, compatible with the fabrication process of present semiconductor optoelectronic devices.

A Numerical Study on Phonon Spectral Contributions to Thermal Conduction in Silicon-on-Insulator Transistor Using Electron-Phonon Interaction Model

Energy Technology Data Exchange (ETDEWEB)

Kang, Hyung-sun; Koh, Young Ha; Jin, Jae Sik [Chosun College of Science and Technology, Gwangju (Korea, Republic of)

2017-06-15

The aim of this study is to understand the phonon transfer characteristics of a silicon thin film transistor. For this purpose, the Joule heating mechanism was considered through the electron-phonon interaction model whose validation has been done. The phonon transport characteristics were investigated in terms of phonon mean free path for the variations in the device power and silicon layer thickness from 41 nm to 177 nm. The results may be used for developing the thermal design strategy for achieving reliability and efficiency of the silicon-on-insulator (SOI) transistor, further, they will increase the understanding of heat conduction in SOI systems, which are very important in the semiconductor industry and the nano-fabrication technology.

Surface electronic transport measurements: A micro multi-point probe approach

DEFF Research Database (Denmark)

Barreto, Lucas

2014-01-01

This work is mostly focused on the study of electronic transport properties of two-dimensional materials, in particular graphene and topological insulators. To study these, we have improved a unique micro multi-point probe instrument used to perform transport measurements. Not only the experimental...... quantities are extracted, such as conductivity, carrier density and carrier mobility. • A method to insulate electrically epitaxial graphene grown on metals, based on a stepwise intercalation methodology, is developed and transport measurements are performed in order to test the insulation. • We show...... a direct measurement of the surface electronic transport on a bulk topological insulator. The surface state conductivity and mobility are obtained. Apart from transport properties, we also investigate the atomic structure of the Bi2Se3(111) surface via surface x-ray diraction and low-energy electron...

Single atom anisotropic magnetoresistance on a topological insulator surface

KAUST Repository

Narayan, Awadhesh

2015-03-12

© 2015 IOP Publishing Ltd and Deutsche Physikalische Gesellschaft. We demonstrate single atom anisotropic magnetoresistance on the surface of a topological insulator, arising from the interplay between the helical spin-momentum-locked surface electronic structure and the hybridization of the magnetic adatom states. Our first-principles quantum transport calculations based on density functional theory for Mn on Bi2Se3 elucidate the underlying mechanism. We complement our findings with a two dimensional model valid for both single adatoms and magnetic clusters, which leads to a proposed device setup for experimental realization. Our results provide an explanation for the conflicting scattering experiments on magnetic adatoms on topological insulator surfaces, and reveal the real space spin texture around the magnetic impurity.

Influence of nonuniform external magnetic fields and anode--cathode shaping on magnetic insulation in coaxial transmission lines

International Nuclear Information System (INIS)

Mostrom, M.A.

1979-01-01

Coaxial transmission lines, used to transfer the high voltage pulse into the diode region of a relativistic electron beam generator, have been studied using the two-dimensional time-dependent fully relativistic and electromagnetic particle simulation code CCUBE. A simple theory of magnetic insulation that agrees well with simulation results for a straight cylindrical coax in a uniform external magnetic field is used to interpret the effects of anode--cathode shaping and nonuniform external magnetic fields. Loss of magnetic insulation appears to be minimized by satisfying two conditions: (1) the cathode surface should follow a flux surface of the external magnetic field; (2) the anode should then be shaped to insure that the magnetic insulation impedance, including transients, is always greater than the effective load impedance wherever there is an electron flow in the anode--cathode gap

Weak antilocalization and universal conductance fluctuations in bismuth telluro-sulfide topological insulators

Energy Technology Data Exchange (ETDEWEB)

Trivedi, Tanuj, E-mail: tanuj@utexas.edu; Sonde, Sushant; Movva, Hema C. P.; Banerjee, Sanjay K., E-mail: banerjee@ece.utexas.edu [Microelectronics Research Center, The University of Texas at Austin, Austin, Texas 78758 (United States)

2016-02-07

We report on van der Waals epitaxial growth, materials characterization, and magnetotransport experiments in crystalline nanosheets of Bismuth Telluro-Sulfide (BTS). Highly layered, good-quality crystalline nanosheets of BTS are obtained on SiO{sub 2} and muscovite mica. Weak-antilocalization (WAL), electron-electron interaction-driven insulating ground state and universal conductance fluctuations are observed in magnetotransport experiments on BTS devices. Temperature, thickness, and magnetic field dependence of the transport data indicate the presence of two-dimensional surface states along with bulk conduction, in agreement with theoretical models. An extended-WAL model is proposed and utilized in conjunction with a two-channel conduction model to analyze the data, revealing a surface component and evidence of multiple conducting channels. A facile growth method and detailed magnetotransport results indicating BTS as an alternative topological insulator material system are presented.

Research on vacuum insulation for cryocables

International Nuclear Information System (INIS)

Graneau, P.

1974-01-01

Vacuum insulation, as compared with solid insulation, simplifies the construction of both resistive or superconducting cryogenic cables. The common vacuum space in the cable can furnish thermal insulation between the environment and the cryogenic coolant, provide electrical insulation between conductors, and establish thermal isolation between go- and return-coolant streams. The differences between solid and vacuum high voltage insulation are discussed, and research on the design, materials selection, and testing of vacuum insulated cryogenic cables is described

Sound Insulation between Dwellings

DEFF Research Database (Denmark)

Rasmussen, Birgit

2011-01-01

Regulatory sound insulation requirements for dwellings exist in more than 30 countries in Europe. In some countries, requirements have existed since the 1950s. Findings from comparative studies show that sound insulation descriptors and requirements represent a high degree of diversity...... and initiate – where needed – improvement of sound insulation of new and existing dwellings in Europe to the benefit of the inhabitants and the society. A European COST Action TU0901 "Integrating and Harmonizing Sound Insulation Aspects in Sustainable Urban Housing Constructions", has been established and runs...... 2009-2013. The main objectives of TU0901 are to prepare proposals for harmonized sound insulation descriptors and for a European sound classification scheme with a number of quality classes for dwellings. Findings from the studies provide input for the discussions in COST TU0901. Data collected from 24...

Theory of the low-voltage impedance of superconductor-- p insulator--normal metal tunnel junctions

International Nuclear Information System (INIS)

Lemberger, T.R.

1984-01-01

A theory for the low-voltage impedance of a superconductor-- p insulator--normal metal tunnel junction is developed that includes the effects of charge imbalance and of quasiparticle fluctuations. A novel, inelastic, charge-imbalance relaxation process is identified that is associated with the junction itself. This new process leads to the surprising result that the charge-imbalance component of the dc resistance of a junction becomes independent of the electron-phonon scattering rate as the insulator resistance decreases

MODEL OF AN ELECTRONIC EDUCATIONAL RESOURCE OF NEW GENERATION

Directory of Open Access Journals (Sweden)

Anatoliy V. Loban

2016-01-01

Full Text Available The mathematical structure of the modular architecture of an electronic educational resource (EER of new generation, which allows to decompose the process of studying the subjects of the course at a hierarchically ordered set of data (knowledge and procedures for manipulating them, to determine the roles of participants of process of training of and technology the development and use of EOR in the study procrate.

Multicharged ion-induced emission from metal- and insulator surfaces related to magnetic fusion research

Energy Technology Data Exchange (ETDEWEB)

Winter, H.P. [Technische Univ., Vienna (Austria). Inst. fuer Allgemeine Physik

1997-01-01

The edge region of magnetically confined plasmas in thermonuclear fusion experiments couples the hot plasma core with the cold first wall. We consider the dependence of plasma-wall interaction processes on edge plasma properties, with particular emphasis on the role of slow multicharged ions (MCI). After a short survey on the physics of slow MCI-surface interaction we discuss recent extensive studies on MCI-induced electron emission from clean metal surfaces conducted at impact velocities << 1 a.u., from which generally reliable total electron yields can be obtained. We then demonstrate the essentially different role of the MCI charge for electron emission from metallic and insulator surfaces, respectively. Furthermore, we present recent results on slow MCI-induced `potential sputtering` of insulators which, in contrast to the well established kinetic sputtering, already occurs at very low ion impact energy and strongly increases with the MCI charge state. (J.P.N.). 55 refs.

Transport of Dirac fermions on the surface of strong topological insulator and graphene

Energy Technology Data Exchange (ETDEWEB)

Kundu, Arijit

2012-06-14

In this dissertation I study electronic transport through Dirac Fermions on the surface of strong topological insulator and graphene. I start by reviewing the physics of topological insulator and graphene and the low energy effective theory for the electronic states of the surface of a 3D strong topological insulator and graphene. Using this theory the electronic structure of the surface states of strong topological insulators of geometries with large surface to bulk ratio like nanowire and thin film are obtained. Then the energy spectrum and the spin-parity structure of the eigenstates for a finite size topological insulator quantum dot of the shape of a nanotube are considered. Numerical calculations show that even at the lowest energy scales, the ''spin-surface locking'' is broken, that is, the spin direction in a topologically protected surface mode is not locked to the surface. The calculations also show the existence of ''zero-momentum'' modes, and sub-gap states localized near the ''caps'' of the dot. Both the energy spectrum and the spin texture of the eigenstates are basically reproduced from an analytical surface Dirac fermion description. The results are compared to microscopic calculations using a tight-binding model for a strong topological insulator in a finite-length nanowire geometry, which shows qualitative similarity. Then, a theoretical study of electron-phonon scattering effects in thin films made of a strong topological insulator is presented. Phonons are modeled by isotropic elastic continuum theory with stress-free boundary conditions, and the interaction with the helical surface Dirac fermions is mediated by the deformation potential. The temperature-dependent electrical resistivity ρ(T) and the quasi-particle decay rate Γ(T) observable in photo-emission are computed numerically. The low and high-temperature power laws for both quantities are obtained analytically. Detailed

The inaccuracy of heat transfer characteristics for non-insulated and insulated spherical containers neglecting the influence of heat radiation

International Nuclear Information System (INIS)

Wong, King-Leung; Salazar, Jose Luis Leon; Prasad, Leo; Chen, Wen-Lih

2011-01-01

In this investigation, the differences of heat transfer characteristics for insulated and non-insulated spherical containers between considering and neglecting the influence of heat radiation are studied by the simulations in some practical situations. It is found that the heat radiation effect cannot be ignored in conditions of low ambient convection heat coefficients (such ambient air) and high surface emissivities, especially for the non-insulated and thin insulated cases. In most practical situations when ambient temperature is different from surroundings temperature and the emissivity of insulation surface is different from that of metal wall surface, neglecting heat radiation will result in inaccurate insulation effect and heat transfer errors even with very thick insulation. However, the insulation effect considering heat radiation will only increase a very small amount after some dimensionless insulated thickness (such insulation thickness/radius ≥0.2 in this study), thus such dimensionless insulated thickness can be used as the optimum thickness in practical applications. Meanwhile, wrapping a material with low surface emissivity (such as aluminum foil) around the oxidized metal wall or insulation layer (always with high surface emissivity) can achieve very good insulated effect for the non-insulated or thin insulated containers.

Electrical insulating liquid: A review

Directory of Open Access Journals (Sweden)

Deba Kumar Mahanta

2017-08-01

Full Text Available Insulating liquid plays an important role for the life span of the transformer. Petroleum-based mineral oil has become dominant insulating liquid of transformer for more than a century for its excellent dielectric and cooling properties. However, the usage of petroleum-based mineral oil, derived from a nonrenewable energy source, has affected the environment for its nonbiodegradability property. Therefore, researchers direct their attention to renewable and biodegradable alternatives. Palm fatty acid ester, coconut oil, sunflower oil, etc. are considered as alternatives to replace mineral oil as transformer insulation liquid. This paper gives an extensive review of different liquid insulating materials used in a transformer. Characterization of different liquids as an insulating material has been discussed. An attempt has been made to classify different insulating liquids-based on different properties.

Application of Nanotechnology-Based Thermal Insulation Materials in Building Construction

Directory of Open Access Journals (Sweden)

Bozsaky David

2016-03-01

Full Text Available Nanotechnology-based materials have previously been used by space research, pharmaceuticals and electronics, but in the last decade several nanotechnology-based thermal insulation materials have appeared in building industry. Nowadays they only feature in a narrow range of practice, but they offer many potential applications. These options are unknown to most architects, who may simply be afraid of these materials owing to the incomplete and often contradictory special literature. Therefore, they are distrustful and prefer to apply the usual and conventional technologies. This article is intended to provide basic information about nanotechnology-based thermal insulation materials for designers. It describes their most important material properties, functional principles, applications, and potential usage options in building construction.

Biodegradation performance of environmentally-friendly insulating oil

Science.gov (United States)

Yang, Jun; He, Yan; Cai, Shengwei; Chen, Cheng; Wen, Gang; Wang, Feipeng; Fan, Fan; Wan, Chunxiang; Wu, Liya; Liu, Ruitong

2018-02-01

In this paper, biodegradation performance of rapeseed insulating oil (RDB) and FR3 insulating oil (FR3) was studied by means of ready biodegradation method which was performed with Organization for Economic Co-operation and Development (OECD) 301B. For comparison, the biodegradation behaviour of 25# mineral insulating oil was also characterized with the same method. The testing results shown that the biodegradation degree of rapeseed insulating oil, FR3 insulating oil and 25# mineral insulating oil was 95.8%, 98.9% and 38.4% respectively. Following the “new chemical risk assessment guidelines” (HJ/T 154 - 2004), which illustrates the methods used to identify and assess the process safety hazards inherent. The guidelines can draw that the two vegetable insulating oils, i.e. rapeseed insulating oil and FR3 insulating oil are easily biodegradable. Therefore, the both can be classified as environmentally-friendly insulating oil. As expected, 25# mineral insulating oil is hardly biodegradable. The main reason is that 25# mineral insulating oil consists of isoalkanes, cyclanes and a few arenes, which has few unsaturated bonds. Biodegradation of rapeseed insulating oil and FR3 insulating oil also remain some difference. Biodegradation mechanism of vegetable insulating oil was revealed from the perspective of hydrolysis kinetics.

Gas insulated substations

CERN Document Server

2014-01-01

This book provides an overview on the particular development steps of gas insulated high-voltage switchgear, and is based on the information given with the editor's tutorial. The theory is kept low only as much as it is needed to understand gas insulated technology, with the main focus of the book being on delivering practical application knowledge. It discusses some introductory and advanced aspects in the meaning of applications. The start of the book presents the theory of Gas Insulated Technology, and outlines reliability, design, safety, grounding and bonding, and factors for choosing GIS. The third chapter presents the technology, covering the following in detail: manufacturing, specification, instrument transformers, Gas Insulated Bus, and the assembly process. Next, the book goes into control and monitoring, which covers local control cabinet, bay controller, control schemes, and digital communication. Testing is explained in the middle of the book before installation and energization. Importantly, ...

Effects of pressure on doped Kondo insulators

International Nuclear Information System (INIS)

Lee, Chengchung; Xu, Wang

1999-08-01

The effects of pressure on the doped Kondo insulators (KI) are studied in the framework of the slave-boson mean-field theory under the coherent potential approximation (CPA). A unified picture for both electron-type KI and hole-type KI is presented. The density of states of the f-electrons under the applied pressures and its variation with the concentration of the Kondo holes are calculated self-consistently. The specific heat coefficient, the zero-temperature magnetic susceptibility as well as the low temperature electric resistivity of the doped KI under various pressures are obtained. The two contrasting pressure-dependent effects observed in the doped KI systems can be naturally explained within a microscopic model. (author)

Decentralising Natural Resource Management and the Politics of ...

African Journals Online (AJOL)

Decentralising Natural Resource Management and the Politics of Institutional Resource Management in Uganda's Forest Sub-Sector. ... December 1992, Uganda has implemented wide-ranging public sector reforms as a part of ... insulate decision making over the allocation of licences from higher-level political pressures, ...

Avalanches near a solid insulator in nitrogen gas at atmospheric pressure

International Nuclear Information System (INIS)

Mahajan, S.M.; Sudarshan, T.S.; Department of Electrical and Computer Engineering, University of South Carolina, Columbia, South Carolina 29208)

1989-01-01

The pulsed Townsend (PT) technique was used to record the growth of avalanches near a solid insulator in nitrogen gas at 0.1 MPa. Several other nonconventional techniques for releasing initiatory electrons at the cathode are discussed. In this paper, experimental results of avalanches initiated by illuminating a fast (0.6-ns) nitrogen laser onto the cathode triple junction are presented. Data were recorded with plexiglas, Teflon, high-density polyethylene, low-density polyethylene, Delrin, etc. Effect of surface condition, variation of the distance between insulator surface and the avalanche initiation region, and the effect of a large number of previous avalanches on the avalanche characteristics at a particular voltage were studied. The Townsend primary ionization coefficient, hereafter referred to as growth coefficient (α), and drift velocity (V/sub e/) were evaluated through the PT technique. Results indicate that the avalanche growth in the vicinity of a solid insulator is less than that in an identical plain gas gap. Existence of a nonuniform field as a result of surface charges on the insulator and/or field modifications due to the avalanche space charge are believed to be responsible for this behavior

Economic and Environmental Optimization of an Airport Terminal Building’s Wall and Roof Insulation

Directory of Open Access Journals (Sweden)

Mehmet Kadri Akyüz

2017-10-01

Full Text Available HVAC systems use the largest share of energy consumption in airport terminal buildings. Thus, the efficiency of the HVAC system and the performance of the building envelope have great importance in reducing the energy used for heating and cooling purposes. In this study, the application of thermal insulation on the walls and roof of the Hasan Polatkan Airport terminal building was investigated from energy, environment and cost aspects. This study determined the optimum insulation thickness and assessed its effects on environmental performance based on energy flows. Environmental payback periods were calculated depending on the optimum insulation thickness. The life cycle assessment (LCA method was used to assess whether the decrease in energy consumption after applying the insulation balanced the environmental effects during the period between the production and application of the thermal insulation material. The global warming potential (GWP based on IPCC100, and the effects on human health (HH, the ecosystem and natural resources were evaluated according to the ReCiPe method. LCA results were obtained by processing data taken from ecoinvent 3 database present in the Sima Pro 8.3.0.0 software. Applying thermal insulation on the walls and roof of the terminal building was found to decrease heat loss by 48% and 56%, respectively. In addition, the analyses showed that the environmental payback periods for the thermal insulation were shorter than the economic payback periods.

Peierls instability as the insulating origin of the Na/Si(111)-(3 × 1) surface with a Na coverage of 2/3 monolayers

Science.gov (United States)

Kang, Myung Ho; Kwon, Se Gab; Jung, Sung Chul

2018-03-01

Density functional theory (DFT) calculations are used to investigate the insulating origin of the Na/Si(111)-(3 × 1) surface with a Na coverage of 2/3 monolayers. In the coverage definition, one monolayer refers to one Na atom per surface Si atom, so this surface contains an odd number of electrons (i.e., three Si dangling-bond electrons plus two Na electrons) per 3 × 1 unit cell. Interestingly, this odd-electron surface has been ascribed to a Mott-Hubbard insulator to account for the measured insulating band structure with a gap of about 0.8 eV. Here, we instead propose a Peierls instability as the origin of the experimental band gap. The concept of Peierls instability is fundamental in one-dimensional metal systems but has not been taken into account in previous studies of this surface. Our DFT calculations demonstrate that the linear chain structure of Si dangling bonds in this surface is energetically unstable with respect to a × 2 buckling modulation, and the buckling-induced band gap of 0.79 eV explains well the measured insulating nature.

Design and performance of the Z magnetically-insulated transmission lines

International Nuclear Information System (INIS)

Stygar, W.A.; Spielman, R.B.; Allshouse, G.O.

1997-01-01

The 36-module Z accelerator was designed to drive z-pinch loads for weapon-physics and inertial-confinement-fusion experiments, and to serve as a testing facility for pulsed-power research required to develop higher-current drivers. The authors have designed and tested a 10-nH 1.5-m-radius vacuum section for the Z accelerator. The vacuum section consists of four vacuum flares, four conical 1.3-m-radius magnetically-insulated transmission lines, a 7.6-cm-radius 12-post double-post-hole convolute which connects the four outer MITLs in parallel, and a 5-cm-long inner MITL which connects the output of the convolute to a z-pinch load. IVORY and ELECTRO calculations were performed to minimize the inductance of the vacuum flares with the constraint that there be no significant electron emission from the insulator-stack grading rings. Iterative TLCODE calculations were performed to minimize the inductance of the outer MITLs with the constraint that the MITL electron-flow-current fraction be ≤ 7% at peak current. The TLCODE simulations assume a 2.5 cm/micros MITL-cathode-plasma expansion velocity. The design limits the electron dose to the outer-MITL anodes to 50 J/g to prevent the formation of an anode plasma. The TLCODE results were confirmed by SCREAMER, TRIFL, TWOQUICK, IVORY, and LASNEX simulations. For the TLCODE, SCREAMER, and TRIFL calculations, the authors assume that after magnetic insulation is established, the electron-flow current launched in the outer MITLs is lost at the convolute. This assumption has been validated by 3-D QUICKSILVER simulations for load impedances ≤ 0.36 ohms. LASNEX calculations suggest that ohmic resistance of the pinch and conduction-current-induced energy loss to the MITL electrodes can be neglected in Z power-flow modeling that is accurate to first order. To date, the Z vacuum section has been tested on 100 shots. They have demonstrated they can deliver a 100-ns rise-time 20-MA current pulse to the baseline z-pinch load

Topological Oxide Insulator in Cubic Perovskite Structure

Science.gov (United States)

Jin, Hosub; Rhim, Sonny H.; Im, Jino; Freeman, Arthur J.

2013-01-01

The emergence of topologically protected conducting states with the chiral spin texture is the most prominent feature at the surface of topological insulators. On the application side, large band gap and high resistivity to distinguish surface from bulk degrees of freedom should be guaranteed for the full usage of the surface states. Here, we suggest that the oxide cubic perovskite YBiO3, more than just an oxide, defines itself as a new three-dimensional topological insulator exhibiting both a large bulk band gap and a high resistivity. Based on first-principles calculations varying the spin-orbit coupling strength, the non-trivial band topology of YBiO3 is investigated, where the spin-orbit coupling of the Bi 6p orbital plays a crucial role. Taking the exquisite synthesis techniques in oxide electronics into account, YBiO3 can also be used to provide various interface configurations hosting exotic topological phenomena combined with other quantum phases. PMID:23575973

On metal-insulator transition in cubic fullerides

Science.gov (United States)

Iwahara, Naoya; Chibotaru, Liviu

The interplay between degenerate orbital and electron correlation is a key to characterize the electronic phases in, for example, transition metal compounds and alkali-doped fullerides. Besides, the degenerate orbital couples to spin and lattice degrees of freedom ,giving rise to exotic phenomena. Here, we develop the self-consistent Gutzwiller approach for the simultaneous treatment of the Jahn-Teller effect and electron correlation, and apply the methodology to reveal the nature of the ground electronic state of fullerides. For small Coulomb repulsion on site U, the fulleride is quasi degenerate correlated metal. With increase of U, we found the quantum phase transition from the metallic phase to JT split phase. In the latter, the Mott transition (MT) mainly develops in the half-filled subband, whereas the empty and the completely filled subbands are almost uninvolved. Therefore, we can qualify the metal-insulator transition in fullerides as an orbital selective MT induced by JT effect.

Simulation study of magnetically insulated power coupling to the applied-B ion diode

International Nuclear Information System (INIS)

Rosenthal, S.E.

1992-01-01

Power coupling to the applied-B ion diode from magnetically insulated transmission lines is simply described in terms of the voltage-current characteristics of both the diode and the transmission line. The accelerator load line intersects the composite characteristic at the operating voltage and current. Using 2-D PIC simulation, the authors have investigated how modification of either the ion diode or the magnetically insulated transmission line characteristic influences power coupling. Plasma prefill can modify the ion diode characteristic; a partially opened POS in the transmission line upstream of the ion diode is a possible cause of modification of the magnetically insulated transmission line characteristic. It can be useful to consider these two aspects of power coupling separately, but they are actually not independent. A good parameter to characterize the situation is the flow impedance, given by V/(I a 2 I c 2 ) 1/2 . V is the line voltage; I a and I c are the conduction currents flowing through the anode and cathode, respectively. The flow impedance covers a range from one half the vacuum impedance, for saturated magnetically insulated flow, to just below the vacuum impedance, for highly unsaturated flow. As the term ''flow impedance'' implies, low flow impedance coincides with greater electron flow while high flow impedance coincides with less electron flow. The flow impedance is sensitive to both the transmission line and the diode impedance. They show how the two are related, using the flow impedance as a parameter

Insulation structure of thermonuclear device

International Nuclear Information System (INIS)

Suzuki, Takayuki; Usami, Saburo; Tsukamoto, Hideo; Kikuchi, Mitsuru

1998-01-01

The present invention provides an insulating structure of a thermonuclear device, in which insulation materials between toroidal coils are not broken even if superconductive toroidal coils are used. Namely, a tokamak type thermonuclear device of an insulating structure type comprises superconductive toroidal coils for confining plasmas arranged in a circular shape directing the center each at a predetermined angle, and the toroidal coils are insulated from each other. The insulation materials are formed by using a biaxially oriented fiber reinforced plastics. The contact surface of the toroidal coils and the insulating materials are arranged so that they are contact at a woven surface of the fiber reinforced plastics. Either or both of the contact surfaces of the fiber reinforced plastics and the toroidal coils are coated with a high molecular compound having a low friction coefficient. With such a constitution, since the interlayer shearing strength of the biaxially oriented fiber reinforced plastics is about 1/10 of the compression strength, the shearing stress exerted on the insulation material is reduced. Since a static friction coefficient on the contact surface is reduced to provide a structure causing slipping, shearing stress does not exceeds a predetermined limit. As a result, breakage of the insulation materials between the toroidal coils can be prevented. (I.S.)

Semiconducting:insulating polymer blends for optoelectronic applications—a review of recent advances

KAUST Repository

Scaccabarozzi, A. D.; Stingelin, N.

2014-01-01

In recent years, immense efforts in the organic electronics field have led to unprecedented progress and to devices of ever increasing performance. Despite these advances, new opportunities are sought in order to widen the applications of organic-based technologies and expand their functionalities and features. For this purpose, use of multicomponent systems seems an interesting approach in view of, e.g., increasing the mechanical flexibility and stability of organic electronic products as well as introducing other features such as self-encapsulation. One specific strategy is based on blending polymeric insulators with organic semiconductors; which has led to a desired improvement of the mechanical properties of organic devices, producing in certain scenarios robust and stable architectures. Here we discuss the working principle of semiconductor:insulator blends, examining the different approaches that have recently been reported in literature. We illustrate how organic field-effect transistors (OFET)s and organic solar cells (OPV)s can be fabricated with such systems without detrimental effects on the resulting device characteristics even at high contents of the insulator. Furthermore, we review the various properties that can be enhanced and/or manipulated by blending including air stability, mechanical toughness, H- vs. J-aggregation, etc. This journal is © the Partner Organisations 2014.

Low-energy electron transmission through high aspect ratio Al O nanocapillaries

DEFF Research Database (Denmark)

Milosavljević, A.R.; Jureta, J.; Víkor, G.

2009-01-01

Electron transmission through insulating AlO nanocapillaries of different diameters (40 and 270 nm) and 15 μm length has been investigated for low-energy electrons (2-120 V). The total intensity of transmitted current weakly depends on the incident electron energy and tilt angle defined with resp......Electron transmission through insulating AlO nanocapillaries of different diameters (40 and 270 nm) and 15 μm length has been investigated for low-energy electrons (2-120 V). The total intensity of transmitted current weakly depends on the incident electron energy and tilt angle defined...

Industrial applications or electron beams

International Nuclear Information System (INIS)

Martin, J. I.

2001-01-01

Industrial use of electron beams began in the 1950's with the crosslinking of polyethylene film and wire insulation. Today the number of electron beam Processing Systems installed for industrial applications throughout the world has grown to more than six hundred stations in over 35 countries. Total installed power is now approaching 40 megawatts (over 8 million tons of products per year). Electron beam is now utilized by many major industries including plastics, automotive, rubber goods, wire and cable, electrical insulation, semiconductor, medical, packaging, or pollution control. The principal effect of high-energy electrons is to produce ions in the materials treated, resulting in the liberation of orbital electrons. As a result, the original molecule is modified and the ree radicals combine to form new molecules with new chemical reactions or dis organisation od the DNA chains of living organisms (insects, fungus, microorganisms, etc.). (Author) 8 refs

Thermal insulation

International Nuclear Information System (INIS)

Durston, J.G.; Birch, W.; Facer, R.I.; Stuart, R.A.

1977-01-01

Reference is made to liquid metal cooled nuclear reactors. In the arrangement described the reactor vessel is clad with thermal insulation comprising a layer of insulating blocks spaced from the wall and from each other; each block is rigidly secured to the wall, and the interspaces are substantially closed against convectional flow of liquid by resilient closure members. A membrane covering is provided for the layer of blocks, with venting means to allow liquid from the reactor vessel to penetrate between the covering and the layer of blocks. The membrane covering may comprise a stainless steel sheet ribbed in orthogonal pattern to give flexibility for the accommodation of thermal strain. The insulating blocks may be comprised of stainless steel or cellular or porous material and may be hollow shells containing ceramic material or gas fillings. (U.K.)

Insulation Reformulation Development

Science.gov (United States)

Chapman, Cynthia; Bray, Mark

2015-01-01

The current Space Launch System (SLS) internal solid rocket motor insulation, polybenzimidazole acrylonitrile butadiene rubber (PBI-NBR), is a new insulation that replaced asbestos-based insulations found in Space Shuttle heritage solid rocket boosters. PBI-NBR has some outstanding characteristics such as an excellent thermal erosion resistance, low thermal conductivity, and low density. PBI-NBR also has some significant challenges associated with its use: Air entrainment/entrapment during manufacture and lay-up/cure and low mechanical properties such as tensile strength, modulus, and fracture toughness. This technology development attempted to overcome these challenges by testing various reformulated versions of booster insulation. The results suggest the SLS program should continue to investigate material alternatives for potential block upgrades or use an entirely new, more advanced booster. The experimental design was composed of a logic path that performs iterative formulation and testing in order to maximize the effort. A lab mixing baseline was developed and documented for the Rubber Laboratory in Bldg. 4602/Room 1178.

Unravelling the local structure of topological crystalline insulators using hyperfine interactions

CERN Multimedia

Phenomena emerging from relativistic electrons in solids have become one the main topical subjects in condensed matter physics. Among a wealth of intriguing new phenomena, several classes of materials have emerged including graphene, topological insulators and Dirac semi-metals. This project is devoted to one such class of materials, in which a subtle distortion of the crystalline lattice drives a material through different topological phases: Z$_{2}$ topological insulator (Z$_{2}$-TI), topological crystalline insulator (TCI), or ferroelectric Rashba semiconductor (FERS). We propose to investigate the local structure of Pb$_{1-x}$Sn$_{x}$Te and Ge$_{1-x}$Sn$_{x}$Te (with $\\textit{x}$ from 0 to 1) using a combination of experimental techniques based on hyperfine interactions: emission Mössbauer spectroscopy (eMS) and perturbed angular correlation spectroscopy (PAC). In particular, we propose to study the effect of composition ($\\textit{x}$ in Pb$_{1-x}$Sn$_{x}$Te and Ge$_{1-x}$Sn$_{x}$Te) on: \\\\ \\\\(1) the mag...

Scanning tunneling microscopy study of a newly proposed topological insulator ZrTe{sub 5}

Energy Technology Data Exchange (ETDEWEB)

Kuhn, Timo; Gragnaniello, Luca; Fonin, Mikhail [Universitaet Konstanz (Germany); Autes, Gabriel; Berger, Helmuth; Yazyev, Oleg [Institute of Condensed Matter Physics, Ecole Polytechnique Federale de Lausanne (EPFL), Lausanne (Switzerland); Manzoni, Giulia [Universita degli Studi di Trieste (Italy); Crepaldi, Alberto; Parmigiani, Fulvio [Elettra-Sincrotrone Trieste, Trieste (Italy)

2016-07-01

Topological insulators belong to a new kind of material class that posses robust gapless states inside the insulating bulk gap, which makes them promising candidates for achieving dissipationless transport devices. We present a Scanning tunneling microscopy (STM) and spectroscopy (STS) study on a layered material ZrTe{sub 5}, a promising candidate for a new topological insulator. The crystal structure could clearly be identified in topography images. STM measurements enabled direct imaging of standing waves at steps and defects. The standing waves show a clearly dispersive character. Furthermore STS measurements are in good agreement with density functional theory calculations and reveal Landau quantization with applied magnetic field. Comparison with data obtained by angle resolved photoemission spectroscopy allows for detailed insights into the electronic properties of this material.

Self-energy behavior away from the Fermi surface in doped Mott insulators.

Science.gov (United States)

Merino, J; Gunnarsson, O; Kotliar, G

2016-02-03

We analyze self-energies of electrons away from the Fermi surface in doped Mott insulators using the dynamical cluster approximation to the Hubbard model. For large onsite repulsion, U, and hole doping, the magnitude of the self-energy for imaginary frequencies at the top of the band ([Formula: see text]) is enhanced with respect to the self-energy magnitude at the bottom of the band ([Formula: see text]). The self-energy behavior at these two [Formula: see text]-points is switched for electron doping. Although the hybridization is much larger for (0, 0) than for [Formula: see text], we demonstrate that this is not the origin of this difference. Isolated clusters under a downward shift of the chemical potential, [Formula: see text], at half-filling reproduce the overall self-energy behavior at (0, 0) and [Formula: see text] found in low hole doped embedded clusters. This happens although there is no change in the electronic structure of the isolated clusters. Our analysis shows that a downward shift of the chemical potential which weakly hole dopes the Mott insulator can lead to a large enhancement of the [Formula: see text] self-energy for imaginary frequencies which is not associated with electronic correlation effects, even in embedded clusters. Interpretations of the strength of electronic correlations based on self-energies for imaginary frequencies are, in general, misleading for states away from the Fermi surface.

Electronic heat, charge and spin transport in superconductor-ferromagnetic insulator structures

Energy Technology Data Exchange (ETDEWEB)

Bergeret, Sebastian [Materials Physics Center (CFM-CSIC), San Sebastian (Spain); Donostia International Physics Center (DIPC), San Sebastian (Spain)

2015-07-01

It is known for some time that a superconducting (S) film in contact with a ferromagnetic insulator (FI) exhibits a spin-splitting in the density of states (DoS). Recently we have explored different S-FI hybrid structures and predicted novel effects exploiting such spin-splitting of the DoS. In this talk I will briefly discuss (i) a heat valve based on a FI-S-I-S-FI Josephson junction; (ii) a thermoelectric transistor and (iii) the occurrence of a giant thermophase in a thermally-biased Josephson junction.

Inelastic interactions of swift electrons in solids

International Nuclear Information System (INIS)

Tung, C.J.; Ritchie, R.H.; Ashley, J.C.; Anderson, V.E.

1976-01-01

Theoretical calculations of electron mean free paths and electron slowing-down spectra in solids are described. These calculations involve (a) the use of an electron gas model to approximate the response of conduction band electrons in metals, (b) the application of a statistical model for the calculation of electron mean free paths in metals, (c) the development of an insulator model to describe valence band electrons in insulators and semiconductors, and (d) the use of data on atomic generalized oscillator strengths to describe the excitation of the ion cores. Exchange effects are included in the calculations through a semi-empirical procedure. Detailed results are presented for electron mean free paths in Ag, Au, Al, and Al 2 O 3 , and on the stopping power of Al and Al 2 O 3 , for electrons with energies at a few eV to 10 keV. The agreement of these calculations with experimental measurements is quite reasonable over a wide range of electron energies. A detailed description of the calculation of electron slowing-down spectra in solids is presented. Low energy electron slowing-down spectra of monoenergetic electron sources in Al and Al 2 O 3 are calculated. Calculations of electron slowing-down spectra in Al 2 O 3 are made using differential cross sections obtained employing an insulator model and from GOS functions for ion core electrons. Auger electron contributions to the slowing-down spectrum are discussed. Results for the slowing-down spectrum are compared with the experimental data measured by Birkhoff and coworkers. Generally good agreement is found over a wide range of electron energies

Note: long-range scanning tunneling microscope for the study of nanostructures on insulating substrates.

Science.gov (United States)

Molina-Mendoza, Aday J; Rodrigo, José G; Island, Joshua; Burzuri, Enrique; Rubio-Bollinger, Gabino; van der Zant, Herre S J; Agraït, Nicolás

2014-02-01

The scanning tunneling microscope (STM) is a powerful tool for studying the electronic properties at the atomic level, however, it is of relatively small scanning range and the fact that it can only operate on conducting samples prevents its application to study heterogeneous samples consisting of conducting and insulating regions. Here we present a long-range scanning tunneling microscope capable of detecting conducting micro and nanostructures on insulating substrates using a technique based on the capacitance between the tip and the sample and performing STM studies.

Note: Long-range scanning tunneling microscope for the study of nanostructures on insulating substrates

Energy Technology Data Exchange (ETDEWEB)

Molina-Mendoza, Aday J., E-mail: aday.molina@uam.es [Departamento de Física de la Materia Condensada, Universidad Autónoma de Madrid, Campus de Cantoblanco, E-28049 Madrid (Spain); Rodrigo, José G.; Rubio-Bollinger, Gabino [Departamento de Física de la Materia Condensada, Universidad Autónoma de Madrid, Campus de Cantoblanco, E-28049 Madrid (Spain); Condensed Matter Physics Center (IFIMAC) and Instituto Universitario de Ciencia de Materiales “Nicolás Cabrera,” Universidad Autónoma de Madrid, Campus de Cantoblanco, E-28049 Madrid (Spain); Island, Joshua; Burzuri, Enrique; Zant, Herre S. J. van der [Kavli Institute of Nanoscience, Delft University of Technology, P.O. Box 5046, 2600 GA Delft (Netherlands); Agraït, Nicolás [Departamento de Física de la Materia Condensada, Universidad Autónoma de Madrid, Campus de Cantoblanco, E-28049 Madrid (Spain); Condensed Matter Physics Center (IFIMAC) and Instituto Universitario de Ciencia de Materiales “Nicolás Cabrera,” Universidad Autónoma de Madrid, Campus de Cantoblanco, E-28049 Madrid (Spain); Instituto Madrileño de Estudios Avanzados en Nanociencia IMDEA-Nanociencia, E-28049 Madrid (Spain)

2014-02-15

The scanning tunneling microscope (STM) is a powerful tool for studying the electronic properties at the atomic level, however, it is of relatively small scanning range and the fact that it can only operate on conducting samples prevents its application to study heterogeneous samples consisting of conducting and insulating regions. Here we present a long-range scanning tunneling microscope capable of detecting conducting micro and nanostructures on insulating substrates using a technique based on the capacitance between the tip and the sample and performing STM studies.

Edge states and integer quantum Hall effect in topological insulator thin films.

Science.gov (United States)

Zhang, Song-Bo; Lu, Hai-Zhou; Shen, Shun-Qing

2015-08-25

The integer quantum Hall effect is a topological state of quantum matter in two dimensions, and has recently been observed in three-dimensional topological insulator thin films. Here we study the Landau levels and edge states of surface Dirac fermions in topological insulators under strong magnetic field. We examine the formation of the quantum plateaux of the Hall conductance and find two different patterns, in one pattern the filling number covers all integers while only odd integers in the other. We focus on the quantum plateau closest to zero energy and demonstrate the breakdown of the quantum spin Hall effect resulting from structure inversion asymmetry. The phase diagrams of the quantum Hall states are presented as functions of magnetic field, gate voltage and chemical potential. This work establishes an intuitive picture of the edge states to understand the integer quantum Hall effect for Dirac electrons in topological insulator thin films.

Environmental safety providing during heat insulation works and using thermal insulation materials

Directory of Open Access Journals (Sweden)

Velichko Evgeny

2017-01-01

Full Text Available This article considers the negative effect of thermal insulating materials and products on human health and environment pollution, particularly in terms of the composition of environmentally hazardous construction products. The authors have analyzed the complex measures for providing ecological safety, sanitary and epidemiological requirements, rules and regulations both during thermal insulation works and throughout the following operation of buildings and premises. The article suggests the protective and preventive measures to reduce and eliminate the negative impact of the proceeding of thermal insulation works on the natural environment and on human health.

16 CFR 460.18 - Insulation ads.

Science.gov (United States)

2010-01-01

... Commercial Practices FEDERAL TRADE COMMISSION TRADE REGULATION RULES LABELING AND ADVERTISING OF HOME INSULATION § 460.18 Insulation ads. (a) If your ad gives an R-value, you must give the type of insulation and... your ad gives a price, you must give the type of insulation, the R-value at a specific thickness, the...

Microscopic Void Detection for Predicting Remaining Life in Electric Cable Insulation

International Nuclear Information System (INIS)

Horvath, David A.; Avila, Steven M.

2003-01-01

A reliable method of testing for remaining life in electric cable insulation has continued to elude the nuclear industry as it seeks to extend the life and license of its nuclear stations. Until recently, a trendable, measurable electrical property has not been found, and unexpected cable failures continue to be reported. Most reliable approaches to date rely on monitoring mechanical properties, which are assumed to degrade faster than the insulation's electrical properties. This paper introduces a promising technique based on void characterization, which is dependent on an electrical property related to dielectric strength. A relationship between insulation void characteristics (size and density) and the onset of partial discharge is known to exist. A similar relationship can be shown between void characteristics and unacceptable leakage currents (another typical cable failure criterion). For low-voltage cables, it is believed void content can be correlated to mechanical property degradation.This paper will report on an approach for using void information, research results showing the existence of trendable void characteristics in commonly used electric insulation materials, and techniques for detecting the voids (both laboratory- and field-based techniques). Acoustical microscopy was found to be potentially more suitable than conventional ultrasound for nondestructive in situ detection and monitoring of void characteristics in jacketed multiconductor insulation while ignoring the jacket. Also, optical and scanning electron microscope techniques will play an essential role in establishing the database necessary for continued development and implementation of this promising technique

Ferromagnetic Peierls insulator state in A Mg4Mn6O15(A =K ,Rb ,Cs )

Science.gov (United States)

Yamaguchi, T.; Sugimoto, K.; Ohta, Y.; Tanaka, Y.; Sato, H.

2018-04-01

Using the density-functional-theory-based electronic structure calculations, we study the electronic state of recently discovered mixed-valent manganese oxides A Mg4Mn6O15(A =K ,Rb ,Cs ) , which are fully spin-polarized ferromagnetic insulators with a cubic crystal structure. We show that the system may be described as a three-dimensional arrangement of the one-dimensional chains of a 2 p orbital of O and a 3 d orbital of Mn running along the three axes of the cubic lattice. We thereby argue that in the ground state the chains are fully spin polarized due to the double-exchange mechanism and are distorted by the Peierls mechanism to make the system insulating.

An Innovative Use of Renewable Ground Heat for Insulation in Low Exergy Building Systems

Directory of Open Access Journals (Sweden)

Hansjürg Leibundgut

2012-08-01

Full Text Available Ground heat is a renewable resource that is readily available for buildings in cool climates, but its relatively low temperature requires the use of a heat pump to extract it for heating. We developed a system that uses low temperature ground heat directly in a building wall to reduce transmission heat losses. The Active Low Exergy Geothermal Insulation Systems (ALEGIS minimizes exergy demand and maximizes the use of renewable geothermal heat from the ground. A fluid is pumped into a small pipe network in an external layer of a wall construction that is linked to a ground heat source. This decouples the building from the outside temperature, therefore eliminating large peak demands and reducing the primary energy demand. Our steady-state analysis shows that at a design temperature of −10 °C the 6 cm thick active insulation system has equivalent performance to 11 cm of passive insulation. Our comparison of heating performance of a building with our active insulation system versus a building with static insulation of the same thickness shows a 15% reduction in annual electricity demand, and thus exergy input. We present an overview of the operation and analysis of our low exergy concept and its modeled performance.

Electrical insulators for the theta-pinch fusion reactor

International Nuclear Information System (INIS)

Clinard, F.W. Jr.

1976-01-01

The five major applications for electrical insulators in the Reference Theta Pinch Reactor are as follows: (1) first-wall insulator, (2) blanket intersegment insulator, (3) graphite encapsulating insulator, (4) implosion coil insulator, and (5) compression coil insulator. Insulator design proposals and some preliminary test results are given for each application

Hydrogen storage in insulated pressure vessels

Energy Technology Data Exchange (ETDEWEB)

Aceves, S.M.; Garcia-Villazana, O. [Lawrence Livermore National Lab., CA (United States)

1998-08-01

Insulated pressure vessels are cryogenic-capable pressure vessels that can be fueled with liquid hydrogen (LH{sub 2}) or ambient-temperature compressed hydrogen (CH{sub 2}). Insulated pressure vessels offer the advantages of liquid hydrogen tanks (low weight and volume), with reduced disadvantages (lower energy requirement for hydrogen liquefaction and reduced evaporative losses). This paper shows an evaluation of the applicability of the insulated pressure vessels for light-duty vehicles. The paper shows an evaluation of evaporative losses and insulation requirements and a description of the current analysis and experimental plans for testing insulated pressure vessels. The results show significant advantages to the use of insulated pressure vessels for light-duty vehicles.

GUIDELINES FOR EVALUATION OF PSYCHOLOGICAL AND PEDAGOGICAL QUALITY CHARACTERISTICS OF ELECTRONIC EDUCATIONAL RESOURCES

Directory of Open Access Journals (Sweden)

Galina P. Lavrentieva

2014-05-01

Full Text Available The article highlights the causes of insufficient effective use of electronic learning resources and sets out the guidelines on ways to solve the aforementioned problems. The set of didactic, methodical, psychological, pedagogical, design and ergonomic quality requirements is considered for evaluation, selection and application of information and communication technologies in the educational process. The most appropriate mechanisms for the ICT introduction into the learning process are disclosed as it should meet the specific learning needs of the student and the objectives of the educational process. The guidance for psycho-educational assessment of quality of electronic educational resources is provided. It is argued that the effectiveness of the ICT use is to be improved by means of quality evaluation mechanisms involved into the educational process.

Availability, Use and Constraints to Use of Electronic Information Resources by Postgraduates Students at the University of Ibadan

Directory of Open Access Journals (Sweden)

Dare Samuel Adeleke

2017-12-01

Full Text Available Availability, awareness and use of electronic resources provide access to authoritative, reliable, accurate and timely access to information. The use of electronic information resources (EIRs can enable innovation in teaching and increase timeliness in research of postgraduate students which will eventual result into encouragement of the expected research-led enquiry in this digital age. The study adopted a descriptive survey design. Samples of 300 of postgraduate students within seven out 13 Faculties were randomly selected. Data were collected using questionnaire designed to elicit response from respondents and data were analyzed using descriptive statistics methods percentages, mean, and standard deviation. Results indicated that internet was ranked most available and used in the university. Low level of usage of electronic resources, in particular, full texts data bases is linked to a number of constraints: Interrupted power supply was ranked highest among other factors as speed and capacity of computers, retrieval of records with high recall and low precision, retrieving records relevant to information need, lack of knowledge of search techniques to retrieve information effectively, non possession of requisite IT skills and problems accessing the internet. The study recommended that usage of electronic resources be made compulsory, intensifying awareness campaigns concerning the availability, training on use of electronic resources and the problem of power outage be addressed.

Giant magneto-spin-Seebeck effect and magnon transfer torques in insulating spin valves

Science.gov (United States)

Cheng, Yihong; Chen, Kai; Zhang, Shufeng

2018-01-01

We theoretically study magnon transport in an insulating spin valve (ISV) made of an antiferromagnetic insulator sandwiched between two ferromagnetic insulator (FI) layers. In the conventional metal-based spin valve, the electron spins propagate between two metallic ferromagnetic layers, giving rise to giant magnetoresistance and spin transfer torque. Here, the incoherent magnons in the ISV serve as angular momentum carriers and are responsible for the angular momentum transport between two FI layers across the antiferromagnetic spacer. We predict two transport phenomena in the presence of the temperature gradient: a giant magneto-spin-Seebeck effect in which the output voltage signal is controlled by the relative orientation of the two FI layers and magnon transfer torque that can be used for switching the magnetization of the FI layers with a temperature gradient of the order of 0.1 Kelvin per nanometer.

Ambipolar field effect in the ternary topological insulator (BixSb1–x)2Te3 by composition tuning

KAUST Repository

Kong, Desheng

2011-10-02

Topological insulators exhibit a bulk energy gap and spin-polarized surface states that lead to unique electronic properties 1-9, with potential applications in spintronics and quantum information processing. However, transport measurements have typically been dominated by residual bulk charge carriers originating from crystal defects or environmental doping 10-12, and these mask the contribution of surface carriers to charge transport in these materials. Controlling bulk carriers in current topological insulator materials, such as the binary sesquichalcogenides Bi 2Te 3, Sb 2Te 3 and Bi 2Se 3, has been explored extensively by means of material doping 8,9,11 and electrical gating 13-16, but limited progress has been made to achieve nanostructures with low bulk conductivity for electronic device applications. Here we demonstrate that the ternary sesquichalcogenide (Bi xSb 1-x) 2Te 3 is a tunable topological insulator system. By tuning the ratio of bismuth to antimony, we are able to reduce the bulk carrier density by over two orders of magnitude, while maintaining the topological insulator properties. As a result, we observe a clear ambipolar gating effect in (Bi xSb 1-x) 2Te 3 nanoplate field-effect transistor devices, similar to that observed in graphene field-effect transistor devices 17. The manipulation of carrier type and density in topological insulator nanostructures demonstrated here paves the way for the implementation of topological insulators in nanoelectronics and spintronics. © 2011 Macmillan Publishers Limited. All rights reserved.

Metal-insulator-semiconductor photodetectors.

Science.gov (United States)

Lin, Chu-Hsuan; Liu, Chee Wee

2010-01-01

The major radiation of the sun can be roughly divided into three regions: ultraviolet, visible, and infrared light. Detection in these three regions is important to human beings. The metal-insulator-semiconductor photodetector, with a simpler process than the pn-junction photodetector and a lower dark current than the MSM photodetector, has been developed for light detection in these three regions. Ideal UV photodetectors with high UV-to-visible rejection ratio could be demonstrated with III-V metal-insulator-semiconductor UV photodetectors. The visible-light detection and near-infrared optical communications have been implemented with Si and Ge metal-insulator-semiconductor photodetectors. For mid- and long-wavelength infrared detection, metal-insulator-semiconductor SiGe/Si quantum dot infrared photodetectors have been developed, and the detection spectrum covers atmospheric transmission windows.

Metal-Insulator-Semiconductor Photodetectors

Directory of Open Access Journals (Sweden)

Chu-Hsuan Lin

2010-09-01

Full Text Available The major radiation of the Sun can be roughly divided into three regions: ultraviolet, visible, and infrared light. Detection in these three regions is important to human beings. The metal-insulator-semiconductor photodetector, with a simpler process than the pn-junction photodetector and a lower dark current than the MSM photodetector, has been developed for light detection in these three regions. Ideal UV photodetectors with high UV-to-visible rejection ratio could be demonstrated with III-V metal-insulator-semiconductor UV photodetectors. The visible-light detection and near-infrared optical communications have been implemented with Si and Ge metal-insulator-semiconductor photodetectors. For mid- and long-wavelength infrared detection, metal-insulator-semiconductor SiGe/Si quantum dot infrared photodetectors have been developed, and the detection spectrum covers atmospheric transmission windows.

Process for manufacturing hollow fused-silica insulator cylinder

Science.gov (United States)

Sampayan, Stephen E.; Krogh, Michael L.; Davis, Steven C.; Decker, Derek E.; Rosenblum, Ben Z.; Sanders, David M.; Elizondo-Decanini, Juan M.

2001-01-01

A method for building hollow insulator cylinders that can have each end closed off with a high voltage electrode to contain a vacuum. A series of fused-silica round flat plates are fabricated with a large central hole and equal inside and outside diameters. The thickness of each is related to the electron orbit diameter of electrons that escape the material surface, loop, and return back. Electrons in such electron orbits can support avalanche mechanisms that result in surface flashover. For example, the thickness of each of the fused-silica round flat plates is about 0.5 millimeter. In general, the thinner the better. Metal, such as gold, is deposited onto each top and bottom surface of the fused-silica round flat plates using chemical vapor deposition (CVD). Eutectic metals can also be used with one alloy constituent on the top and the other on the bottom. The CVD, or a separate diffusion step, can be used to defuse the deposited metal deep into each fused-silica round flat plate. The conductive layer may also be applied by ion implantation or gas diffusion into the surface. The resulting structure may then be fused together into an insulator stack. The coated plates are aligned and then stacked, head-to-toe. Such stack is heated and pressed together enough to cause the metal interfaces to fuse, e.g., by welding, brazing or eutectic bonding. Such fusing is preferably complete enough to maintain a vacuum within the inner core of the assembled structure. A hollow cylinder structure results that can be used as a core liner in a dielectric wall accelerator and as a vacuum envelope for a vacuum tube device where the voltage gradients exceed 150 kV/cm.

A Study on Developing Evaluation Criteria for Electronic Resources in Evaluation Indicators of Libraries

Science.gov (United States)

Noh, Younghee

2010-01-01

This study aimed to improve the current state of electronic resource evaluation in libraries. While the use of Web DB, e-book, e-journal, and other e-resources such as CD-ROM, DVD, and micro materials is increasing in libraries, their use is not comprehensively factored into the general evaluation of libraries and may diminish the reliability of…

Practical Improvements to the Lee-More Conductivity Near the Metal-Insulator Transition

International Nuclear Information System (INIS)

Desjarlais, Michael P.

2000-01-01

The wide-range conductivity model of Lee and More is modified to allow better agreement with recent experimental data and theories for dense plasmas in the metal-insulator transition regime. Modifications primarily include a new ionization equilibrium model, consisting of a smooth blend between single ionization Saha (with a pressure ionization correction) and the generic Thomas-Fermi ionization equilibrium, a more accurate treatment of electron-neutral collisions using a polarization potential, and an empirical modification to the minimum allowed collision time. These simple modifications to the Lee-More algorithm permit a more accurate modeling of the physics near the metal-insulator transition, while preserving the generic Lee-More results elsewhere

Practical improvements to the Lee-More conductivity near the metal-insulator transition

International Nuclear Information System (INIS)

Desjarlais, M.P.

2001-01-01

The wide-range conductivity model of Lee and More is modified to allow better agreement with recent experimental data and theories for dense plasmas in the metal-insulator transition regime. Modifications primarily include a new ionization equilibrium model, consisting of a smooth blend between single ionization Saha (with a pressure ionization correction) and the generic Thomas-Fermi ionization equilibrium, a more accurate treatment of electron-neutral collisions using a polarization potential, and an empirical modification to the minimum allowed collision time. These simple modifications to the Lee-More algorithm permit a more accurate modeling of the physics near the metal-insulator transition, while preserving the generic Lee-More results elsewhere. (orig.)

Magnetic insulation in triplate and coaxial vacuum transmission lines. Report PIFR-1009

International Nuclear Information System (INIS)

Di Capua, M.; Pellinen, D.G.

1980-08-01

An experimental investigation was made of magnetically insulated transmission lines for use in an electron beam fusion accelerator. The magnetically insulated vacuum transmission lines would transfer the power pulses from many modules to a single diode region or multiple diodes to generate currents on the order of 100 MA. This approach may allow present limits on power flow through dielectric vacuum interfaces to be overcome. We have investigated symmetric parallel plate (triplate) transmission lines with a wave impedance of 24 Ω and a spacing of 1.9 cm, and coaxial transmission lines (coax) with a wave impedance of 42 Ω and a spacing of 2.9 cm

Opportunities in chemistry and materials science for topological insulators and their nanostructures

KAUST Repository

Kong, Desheng

2011-10-24

Electrical charges on the boundaries of topological insulators favour forward motion over back-scattering at impurities, producing low-dissipation, metallic states that exist up to room temperature in ambient conditions. These states have the promise to impact a broad range of applications from electronics to the production of energy, which is one reason why topological insulators have become the rising star in condensed-matter physics. There are many challenges in the processing of these exotic materials to use the metallic states in functional devices, and they present great opportunities for the chemistry and materials science research communities. © 2011 Macmillan Publishers Limited. All rights reserved.

Electronics. Module 2: Fundamentals of Electronics. Instructor's Guide.

Science.gov (United States)

Everett, Jim

This guide contains instructor's materials for a nine-unit secondary school course on fundamentals of electronics. The units are conductors, insulators, semiconductors, and atomic structure; basic concepts and sources of electrical quantities; Ohm's Law; units and conversions; use of multimeters; circuits; electromagnetics and electrostatics;…

Surface and Bulk Nanostructuring of Insulators by Ultrashort Laser Pulses

Science.gov (United States)

2017-04-05

non perturbative effects leading to HHG. 15. SUBJECT TERMS Nanostructuring of bulk insulators, sub-picosecond electronic and structural events , photo...time, the charge density oscillations follow the time periodicity of the incident radiation. These transient charge oscillations are exclusively due...As in section II photoexcitation and the dielectric response of laser-irradiated diamond are treated in independent particle approximation based on the

An Angle Resolved Photoemission Study of a Mott Insulator and Its Evolution to a High Temperature Superconductor

Energy Technology Data Exchange (ETDEWEB)

Ronning, Filip

2002-03-19

One of the most remarkable facts about the high temperature superconductors is their close proximity to an antiferromagnetically ordered Mott insulating phase. This fact suggests that to understand superconductivity in the cuprates we must first understand the insulating regime. Due to material properties the technique of angle resolved photoemission is ideally suited to study the electronic structure in the cuprates. Thus, a natural starting place to unlocking the secrets of high Tc would appears to be with a photoemission investigation of insulating cuprates. This dissertation presents the results of precisely such a study. In particular, we have focused on the compound Ca{sub 2-x}Na{sub x}CuO{sub 2}Cl{sub 2}. With increasing Na content this system goes from an antiferromagnetic Mott insulator with a Neel transition of 256K to a superconductor with an optimal transition temperature of 28K. At half filling we have found an asymmetry in the integrated spectral weight, which can be related to the occupation probability, n(k). This has led us to identify a d-wave-like dispersion in the insulator, which in turn implies that the high energy pseudogap as seen by photoemission is a remnant property of the insulator. These results are robust features of the insulator which we found in many different compounds and experimental conditions. By adding Na we were able to study the evolution of the electronic structure across the insulator to metal transition. We found that the chemical potential shifts as holes are doped into the system. This picture is in sharp contrast to the case of La{sub 2-x}Sr{sub x}CuO{sub 4} where the chemical potential remains fixed and states are created inside the gap. Furthermore, the low energy excitations (ie the Fermi surface) in metallic Ca{sub 1.9}Na{sub 0.1}CuO{sub 2}Cl{sub 2} is most well described as a Fermi arc, although the high binding energy features reveal the presence of shadow bands. Thus, the results in this dissertation provide a

Effects of insulation on potted superconducting coils

International Nuclear Information System (INIS)

Zeller, A.F.; DeKamp, J.C.; Magsig, C.T.; Nolen, J.A.; McInturff, A.D.

1989-01-01

Test coils using identical wire but with either Formvar or Polyesterimid insulation were fabricated to determine the effects of insulation on training behavior. It was found that the type of insulation did not affect the training behavior. While considerable attention has been paid to epoxy formulations used for superconducting coils, little study has been devoted to the effects of the wire insulation on training behavior. If the insulation does not bind well with the epoxy, the wires will not be held securely in place, and training will be required to make the coil operate at its design limit. In fact, the coil may never reach its design current, showing considerable degredation. Conversely, if the epoxy-insulation reaction is to soften or weaken the insulation, then shorts and/or training may result. The authors have undertaken a study of the effects of the insulation on potted coils wet wound with Stycast 2850 FT epoxy. The wire was insulated with one of two insulting varnishes: Formvar (a polyvinyl formal resin) or Polyesterimid (a phenolic resin). Formvar is the standard insulation in the United States while Polyesterimid the European standard

Prospect of quantum anomalous Hall and quantum spin Hall effect in doped kagome lattice Mott insulators.

Science.gov (United States)

Guterding, Daniel; Jeschke, Harald O; Valentí, Roser

2016-05-17

Electronic states with non-trivial topology host a number of novel phenomena with potential for revolutionizing information technology. The quantum anomalous Hall effect provides spin-polarized dissipation-free transport of electrons, while the quantum spin Hall effect in combination with superconductivity has been proposed as the basis for realizing decoherence-free quantum computing. We introduce a new strategy for realizing these effects, namely by hole and electron doping kagome lattice Mott insulators through, for instance, chemical substitution. As an example, we apply this new approach to the natural mineral herbertsmithite. We prove the feasibility of the proposed modifications by performing ab-initio density functional theory calculations and demonstrate the occurrence of the predicted effects using realistic models. Our results herald a new family of quantum anomalous Hall and quantum spin Hall insulators at affordable energy/temperature scales based on kagome lattices of transition metal ions.

Electron lone pair distortion facilitated metal-insulator transition in β-Pb{sub 0.33}V{sub 2}O{sub 5} nanowires

Energy Technology Data Exchange (ETDEWEB)

Wangoh, L.; Quackenbush, N. F. [Department of Physics, Applied Physics and Astronomy, Binghamton University, Binghamton, New York 13902 (United States); Marley, P. M.; Banerjee, S. [Department of Chemistry, University at Buffalo, The State University of New York, Buffalo, New York 14260 (United States); Sallis, S. [Materials Science and Engineering, Binghamton University, Binghamton, New York 13902 (United States); Fischer, D. A.; Woicik, J. C. [Materials Science and Engineering Laboratory, National Institute of Standards and Technology, Gaithersburg, Maryland 20899 (United States); Piper, L. F. J., E-mail: lpiper@binghamton.edu [Department of Physics, Applied Physics and Astronomy, Binghamton University, Binghamton, New York 13902 (United States); Materials Science and Engineering, Binghamton University, Binghamton, New York 13902 (United States)

2014-05-05

The electronic structure of β-Pb{sub 0.33}V{sub 2}O{sub 5} nanowires has been studied with x-ray photoelectron spectroscopy techniques. The recent synthesis of defect-free β-Pb{sub 0.33}V{sub 2}O{sub 5} nanowires resulted in the discovery of an abrupt voltage-induced metal insulator transition. First principle calculations predicted an additional V-O-Pb hybridized “in-gap” state unique to this vanadium bronze playing a significant role in facilitating the transition. We confirm the existence, energetic position, and orbital character of the “in-gap” state. Moreover, we reveal that this state is a hybridized Pb 6s–O 2p antibonding lone pair state resulting from the asymmetric coordination of the Pb{sup 2+} ions.

Vacuum foil insulation system

International Nuclear Information System (INIS)

Hanson, J.P.; Sabolcik, R.E.; Svedberg, R.C.

1976-01-01

In a multifoil thermal insulation package having a plurality of concentric cylindrical cups, means are provided for reducing heat loss from the penetration region which extends through the cups. At least one cup includes an integral skirt extending from one end of the cup to intersection with the penetration means. Assembly of the insulation package with the skirted cup is facilitated by splitting the cup to allow it to be opened up and fitted around the other cups during assembly. The insulation is for an implantable nuclear powered artificial heart

Topological insulators

CERN Document Server

Franz, Marcel

2013-01-01

Topological Insulators, volume six in the Contemporary Concepts of Condensed Matter Series, describes the recent revolution in condensed matter physics that occurred in our understanding of crystalline solids. The book chronicles the work done worldwide that led to these discoveries and provides the reader with a comprehensive overview of the field. Starting in 2004, theorists began to explore the effect of topology on the physics of band insulators, a field previously considered well understood. However, the inclusion of topology brings key new elements into this old field. Whereas it was

PD-pulse characteristics in rotating machine insulation

DEFF Research Database (Denmark)

Holbøll, Joachim; Henriksen, Mogens; Jensen, A

1994-01-01

In this paper results are presented from investigations on partial discharges (PD) in insulation systems, resembling the stator insulation in high voltage rotating machines. A model, simulating a stator winding in a slot, has been developed, consisting of simple rotating machine insulation test...... bars with epoxy/mica insulation, mounted between steel sheets forming a dot, in order to investigate the fundamental behaviour of PD in insulation defects in epoxy/mica insulation and the characteristics of the resulting electrical pulses. Stator slot couplers (SSC) were used to detect pulses coming...

THE MODEL OF LINGUISTIC TEACHERS’ COMPETENCY DEVELOPMENT ON DESIGNING MULTIMEDIA ELECTRONIC EDUCATIONAL RESOURCES IN THE MOODLE SYSTEM

OpenAIRE

Anton M. Avramchuk

2017-01-01

The article is devoted to the problem of developing the competency of teachers of language disciplines on designing multimedia electronic educational resources in the Moodle system. The concept of "the competence of teachers of language disciplines on designing multimedia electronic educational resources in the Moodle system" is justified and defined. Identified and characterized the components by which the levels of the competency development of teachers of language disciplines on designing ...

Simulation of magnetic tunnel junction in ferromagnetic/insulator/semiconductor structure

Science.gov (United States)

Kostrov, Alexander I.; Stempitsky, Viktor R.; Kazimirchik, Vladimir N.

2008-07-01

In this work, we present a physical model and electrical macromodel for simulation of Magnetic Tunnel Junction (MTJ) effect based on Ferromagnetic/Insulator/Semiconductor (FIS) nanostructure. A modified Brinkman model has been proposed by including the voltage-dependent density of states of the ferromagnetic electrodes in order to explain the bias dependence magnitoresistance. The model takes into account injection of carriers in the semiconductor and Shottky barrier, electron tunneling through thin insulator and spin-transfer torque writing approach in memory cell. These very promising features should constitute the third generation of Magnetoresistive RAM (MRAM). Besides, the model can efficiently be used to design magnetic CMOS circuits. The behavioral macro-model has been developed by means of Verilog-AMS language and implemented on the Cadence Virtuoso platform with Spectre simulator.

Electron spectroscopic investigation of metal–insulator transition in ...

Indian Academy of Sciences (India)

Unknown

Electronic structure of transition metal (TM) oxides has been under detailed investi- ..... Scientific and Industrial Research, New Delhi for a fellowship. ... Maiti K 1998 Novel electronic structures in transition metal oxides, Ph D thesis, Solid.

Status of magnetically-insulated power transmission theory

Energy Technology Data Exchange (ETDEWEB)

Mendel, Jr, C W [Sandia Labs., Albuquerque, NM (United States)

1997-12-31

The theory of magnetically-insulated power flow has improved dramatically over the last two decades. Theoretical improvements included a complete general kinetic theory that involved distributions of electrons based on quasi-conserved canonical variables and was used to study flow stability and to analyze simulations and pulsers with voltage adders. The status of theory at this time allowed us to understand many features of these flows, but did not allow detailed analysis for design and data interpretation. Recent theoretical advances have drastically changed this situation. Two recent static models based on layered flows have allowed us to understand and to improve power coupling in voltage adders, current adders, plasma opening switches and in systems where the vacuum impedance varies along the flow. A dynamic model based upon electrons flowing in one or more thin layers has permitted detailed self-consistent time-dependent calculations which include electron flow. This model accurately predicts experimental and simulation data. (author). 3 figs.

Ion beam enhancement in magnetically insulated ion diodes for high-intensity pulsed ion beam generation in non-relativistic mode

Energy Technology Data Exchange (ETDEWEB)

Zhu, X. P. [Key Laboratory of Materials Modification by Laser, Ion, and Electron Beams, Ministry of Education, Dalian University of Technology, Dalian 116024 (China); Surface Engineering Laboratory, School of Materials Science and Engineering, Dalian University of Technology, Dalian 116024 (China); Zhang, Z. C.; Lei, M. K., E-mail: surfeng@dlut.edu.cn [Surface Engineering Laboratory, School of Materials Science and Engineering, Dalian University of Technology, Dalian 116024 (China); Pushkarev, A. I. [Surface Engineering Laboratory, School of Materials Science and Engineering, Dalian University of Technology, Dalian 116024 (China); Laboratory of Beam and Plasma Technology, High Technologies Physics Institute, Tomsk Polytechnic University, 30, Lenin Ave, 634050 Tomsk (Russian Federation)

2016-01-15

High-intensity pulsed ion beam (HIPIB) with ion current density above Child-Langmuir limit is achieved by extracting ion beam from anode plasma of ion diodes with suppressing electron flow under magnetic field insulation. It was theoretically estimated that with increasing the magnetic field, a maximal value of ion current density may reach nearly 3 times that of Child-Langmuir limit in a non-relativistic mode and close to 6 times in a highly relativistic mode. In this study, the behavior of ion beam enhancement by magnetic insulation is systematically investigated in three types of magnetically insulated ion diodes (MIDs) with passive anode, taking into account the anode plasma generation process on the anode surface. A maximal enhancement factor higher than 6 over the Child-Langmuir limit can be obtained in the non-relativistic mode with accelerating voltage of 200–300 kV. The MIDs differ in two anode plasma formation mechanisms, i.e., surface flashover of a dielectric coating on the anode and explosive emission of electrons from the anode, as well as in two insulation modes of external-magnetic field and self-magnetic field with either non-closed or closed drift of electrons in the anode-cathode (A-K) gap, respectively. Combined with ion current density measurement, energy density characterization is employed to resolve the spatial distribution of energy density before focusing for exploring the ion beam generation process. Consistent results are obtained on three types of MIDs concerning control of neutralizing electron flows for the space charge of ions where the high ion beam enhancement is determined by effective electron neutralization in the A-K gap, while the HIPIB composition of different ion species downstream from the diode may be considerably affected by the ion beam neutralization during propagation.

Determining the level of awareness of the physicians in using the variety of electronic information resources and the effecting factors.

Science.gov (United States)

Papi, Ahmad; Ghazavi, Roghayeh; Moradi, Salimeh

2015-01-01

Understanding of the medical society's from the types of information resources for quick and easy access to information is an imperative task in medical researches and management of the treatment. The present study was aimed to determine the level of awareness of the physicians in using various electronic information resources and the factors affecting it. This study was a descriptive survey. The data collection tool was a researcher-made questionnaire. The study population included all the physicians and specialty physicians of the teaching hospitals affiliated to Isfahan University of Medical Sciences and numbered 350. The sample size based on Morgan's formula was set at 180. The content validity of the tool was confirmed by the library and information professionals and the reliability was 95%. Descriptive statistics were used including the SPSS software version 19. On reviewing the need of the physicians to obtain the information on several occasions, the need for information in conducting the researches was reported by the maximum number of physicians (91.9%) and the usage of information resources, especially the electronic resources, formed 65.4% as the highest rate with regard to meeting the information needs of the physicians. Among the electronic information databases, the maximum awareness was related to Medline with 86.5%. Among the various electronic information resources, the highest awareness (43.3%) was related to the E-journals. The highest usage (36%) was also from the same source. The studied physicians considered the most effective deterrent in the use of electronic information resources as being too busy and lack of time. Despite the importance of electronic information resources for the physician's community, there was no comprehensive knowledge of these resources. This can lead to less usage of these resources. Therefore, careful planning is necessary in the hospital libraries in order to introduce the facilities and full capabilities of the

INSUL, Calculation of Thermal Insulation of Various Materials Immersed in He

International Nuclear Information System (INIS)

Kinkead, A.N.; Pitchford, B.E.

1977-01-01

1 - Nature of the physical problem solved: Performance of thermal insulation immersed in helium. 2 - Method of solution: Mineral fibre, metal fibre and metallic multi-layer foils are studied. An approximate analysis for performance evaluation of multi-layer insulation in vertical gas spaces including the regime between fully suppressed natural convection and that for which an accepted power relationship applies is included

Integrated Multilayer Insulation

Science.gov (United States)

Dye, Scott

2009-01-01

Integrated multilayer insulation (IMLI) is being developed as an improved alternative to conventional multilayer insulation (MLI), which is more than 50 years old. A typical conventional MLI blanket comprises between 10 and 120 metallized polymer films separated by polyester nets. MLI is the best thermal- insulation material for use in a vacuum, and is the insulation material of choice for spacecraft and cryogenic systems. However, conventional MLI has several disadvantages: It is difficult or impossible to maintain the desired value of gap distance between the film layers (and consequently, it is difficult or impossible to ensure consistent performance), and fabrication and installation are labor-intensive and difficult. The development of IMLI is intended to overcome these disadvantages to some extent and to offer some additional advantages over conventional MLI. The main difference between IMLI and conventional MLI lies in the method of maintaining the gaps between the film layers. In IMLI, the film layers are separated by what its developers call a micro-molded discrete matrix, which can be loosely characterized as consisting of arrays of highly engineered, small, lightweight, polymer (typically, thermoplastic) frames attached to, and placed between, the film layers. The term "micro-molded" refers to both the smallness of the frames and the fact that they are fabricated in a process that forms precise small features, described below, that are essential to attainment of the desired properties. The term "discrete" refers to the nature of the matrix as consisting of separate frames, in contradistinction to a unitary frame spanning entire volume of an insulation blanket.

Managing Selection for Electronic Resources: Kent State University Develops a New System to Automate Selection

Science.gov (United States)

Downey, Kay

2012-01-01

Kent State University has developed a centralized system that manages the communication and work related to the review and selection of commercially available electronic resources. It is an automated system that tracks the review process, provides selectors with price and trial information, and compiles reviewers' feedback about the resource. It…

ASRM case insulation design and development

Science.gov (United States)

Bell, Matthew S.; Tam, William F. S.

1992-10-01

This paper describes the achievements made on the Advanced Solid Rocket Motor (ASRM) case insulation design and development program. The ASRM case insulation system described herein protects the metal case and joints from direct radiation and hot gas impingement. Critical failure of solid rocket systems is often traceable to failure of the insulation design. The wide ranging accomplishments included the development of a nonasbestos insulation material for ASRM that replaced the existing Redesigned Solid Rocket Motor (RSRM) asbestos-filled nitrile butadiene rubber (NBR) along with a performance gain of 300 pounds, and improved reliability of all the insulation joint designs, i.e., segmented case joint, case-to-nozzle and case-to-igniter joint. The insulation process development program included the internal stripwinding process. This process advancement allowed Aerojet to match to exceed the capability of other propulsion companies.

Magnetotransport and induced superconductivity in Bi based three-dimensional topological insulators

International Nuclear Information System (INIS)

Veldhorst, M.; Snelder, M.; Hoek, M.; Molenaar, C.G.; Leusink, D.P.; Golubov, A.A.; Hilgenkamp, H.; Brinkman, A.

2013-01-01

The surface of a three-dimensional (3D) topological insulator is conducting and the topologically nontrivial nature of the surface states is observed in experiments. It is the aim of this paper to review and analyze experimental observations with respect to the magnetotransport in Bi-based 3D topological insulators, as well as the superconducting transport properties of hybrid structures consisting of superconductors and these topological insulators. The helical spin-momentum coupling of the surface state electrons becomes visible in quantum corrections to the conductivity and magnetoresistance oscillations. An analysis will be provided of the reported magnetoresistance, also in the presence of bulk conductivity shunts. Special attention is given to the large and linear magnetoresistance. Superconductivity can be induced in topological superconductors by means of the proximity effect. The induced supercurrents, Josephson effects and current-phase relations will be reviewed. These materials hold great potential in the field of spintronics and the route towards Majorana devices. (copyright 2013 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Magnetotransport and induced superconductivity in Bi based three-dimensional topological insulators

Energy Technology Data Exchange (ETDEWEB)

Veldhorst, M.; Snelder, M.; Hoek, M.; Molenaar, C.G.; Leusink, D.P.; Golubov, A.A.; Hilgenkamp, H.; Brinkman, A. [MESA + Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE Enschede (Netherlands)

2013-02-15

The surface of a three-dimensional (3D) topological insulator is conducting and the topologically nontrivial nature of the surface states is observed in experiments. It is the aim of this paper to review and analyze experimental observations with respect to the magnetotransport in Bi-based 3D topological insulators, as well as the superconducting transport properties of hybrid structures consisting of superconductors and these topological insulators. The helical spin-momentum coupling of the surface state electrons becomes visible in quantum corrections to the conductivity and magnetoresistance oscillations. An analysis will be provided of the reported magnetoresistance, also in the presence of bulk conductivity shunts. Special attention is given to the large and linear magnetoresistance. Superconductivity can be induced in topological superconductors by means of the proximity effect. The induced supercurrents, Josephson effects and current-phase relations will be reviewed. These materials hold great potential in the field of spintronics and the route towards Majorana devices. (copyright 2013 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Study of heat insulated turbo compound engine. Shanetsugata tabo konpaundo engine to tomoni ayumu

Energy Technology Data Exchange (ETDEWEB)

Hirai, K [Isuzu Motors Ltd., Tokyo (Japan). Ceramics Research Lab.

1994-02-01

For a main purpose of development of the heat insulated turbo compound engine using the ceramics, the Isuzu Ceramics Inst. Co., Ltd. was established by the Isuzu Motors Ltd. in 1988. The main study subjects take up various topics such as a development of the new engine system for actualizing a low fuel consumption and low emission, an improvement of deteriorated combustion caused by the insulation, a development of energy recovery facility for utilizing effectively the exhaust energy from the engines, a development of power electronics technology for controlling the recovery facility, a study and development of ceramics as the insulation material and so forth. The outstanding characteristics of this institute are that a development of the heat insulated turbo compound engine is set as the main study subject, but at the same time that a commercialization of the various derivation technology derived from this study. Even just the main study subjects currently under way are counted up to a number close to 10 items, and consequently the efforts are being continued in each field assigned for solving the subjects. 6 figs.

Disorder-driven metal-insulator-transition assisted by interband Coulomb repulsion in a surface transfer doped electron system

Science.gov (United States)

Francisco Sánchez-Royo, Juan

2012-12-01

The two-dimensional conducting properties of the Si(111) \\sqrt {3} \\times \\sqrt {3} surface doped by the charge surface transfer mechanism have been calculated in the frame of a semiclassical Drude-Boltzmann model considering donor scattering mechanisms. To perform these calculations, the required values of the carrier effective mass were extracted from reported angle-resolved photoemission results. The calculated doping dependence of the surface conductance reproduces experimental results reported and reveals an intricate metallization process driven by disorder and assisted by interband interactions. The system should behave as an insulator even at relatively low doping due to disorder. However, when doping increases, the system achieves to attenuate the inherent localization effects introduced by disorder and to conduct by percolation. The mechanism found by the system to conduct appears to be connected with the increasing of the carrier effective mass observed with doping, which seems to be caused by interband interactions involving the conducting band and deeper ones. This mass enhancement reduces the donor Bohr radius and, consequently, promotes the screening ability of the donor potential by the electron gas.

Self-assembled diacetylene molecular wire polymerization on an insulating hexagonal boron nitride (0001) surface

Czech Academy of Sciences Publication Activity Database

Makarova, Marina; Okawa, Y.; Verveniotis, E.; Watanabe, K.; Taniguchi, T.; Joachim, Ch.; Aono, M.

2016-01-01

Roč. 27, č. 39 (2016), 1-8, č. článku 395303. ISSN 0957-4484 Institutional support: RVO:68378271 Keywords : molecular self-assembly * insulating substrate * molecular electronics * polydiacetylene Subject RIV: BJ - Thermodynamics Impact factor: 3.440, year: 2016

End-of-life resource recovery from emerging electronic products

DEFF Research Database (Denmark)

Parajuly, Keshav; Habib, Komal; Cimpan, Ciprian

2016-01-01

Integrating product design with appropriate end-of-life (EoL) processing is widely recognized to have huge potentials in improving resource recovery from electronic products. In this study, we investigate both the product characteristics and EoL processing of robotic vacuum cleaner (RVC), as a case...... of emerging electronic product, in order to understand the recovery fate of different materials and its linkage to product design. Ten different brands of RVC were dismantled and their material composition and design profiles were studied. Another 125 RVCs (349 kg) were used for an experimental trial...... at a conventional ‘shred-and-separate’ type preprocessing plant in Denmark. A detailed material flow analysis was performed throughout the recycling chain. The results show a mismatch between product design and EoL processing, and the lack of practical implementation of ‘Design for EoL’ thinking. In the best...

Deep learning the quantum phase transitions in random two-dimensional electron systems

International Nuclear Information System (INIS)

Ohtsuki, Tomoki; Ohtsuki, Tomi

2016-01-01

Random electron systems show rich phases such as Anderson insulator, diffusive metal, quantum Hall and quantum anomalous Hall insulators, Weyl semimetal, as well as strong/weak topological insulators. Eigenfunctions of each matter phase have specific features, but owing to the random nature of systems, determining the matter phase from eigenfunctions is difficult. Here, we propose the deep learning algorithm to capture the features of eigenfunctions. Localization-delocalization transition, as well as disordered Chern insulator-Anderson insulator transition, is discussed. (author)

Magnetoconductance of amorphous Yx-Si1-x alloys near the metal-insulator transition

International Nuclear Information System (INIS)

Sanquer, M.; Tourbot, R.; Boucher, B.

1989-01-01

We have performed magnetoresistance experiments across the Metal-Insulator transition in amorphous Y x -Si 1-x alloys using very high fields (H = 40T) and very low temperatures (T = 0.05K). Different and unusual behaviours are observed and can be explained assuming that the electron-electron interaction contribution dominates at low fields and localization corrections appears at very high fields. This is the opposite situation compared to usual weak localization regime

Organic electronic memory based on a ferroelectric polymer

Energy Technology Data Exchange (ETDEWEB)

Kalbitz, R; Fruebing, P; Gerhard, R [Department of Physics and Astronomy, University of Potsdam, Karl-Liebknecht Str., 24-25, 14476 Potsdam (Germany); Taylor, D M, E-mail: d.m.taylor@bangor.ac.uk [School of Electronic Engineering, Bangor University, Dean Street, Bangor, Gwynedd LL57 1UT (United Kingdom)

2011-06-23

Measurements of the capacitance of metal-insulator-semiconductor capacitors and the output characteristics of thin film transistors based on poly(3-hexylthiophene) as the active semiconductor and poly(vinylidenefluoride-trifluoroethylene) as the gate insulator show that ferroelectric polarisation in the insulator is stable but that its effect when poled by depletion voltages is partially neutralised by trapping of electrons at or near the semiconductor interface. Nevertheless, the combination of materials is capable of providing an adequate memory function.

Use of electronic sales data to tailor nutrition education resources for an ethnically diverse population.

Science.gov (United States)

Eyles, H; Rodgers, A; Ni Mhurchu, C

2010-02-01

Nutrition education may be most effective when personally tailored. Individualised electronic supermarket sales data offer opportunities to tailor nutrition education using shopper's usual food purchases. The present study aimed to use individualised electronic supermarket sales data to tailor nutrition resources for an ethnically diverse population in a large supermarket intervention trial in New Zealand. Culturally appropriate nutrition education resources (i.e. messages and shopping lists) were developed with the target population (through two sets of focus groups) and ethnic researchers. A nutrient database of supermarket products was developed using retrospective sales data and linked to participant sales to allow tailoring by usual food purchases. Modified Heart Foundation Tick criteria were used to identify 'healthier' products in the database suitable for promotion in the resources. Rules were developed to create a monthly report listing the tailored and culturally targeted messages to be sent to each participant, and to produce automated, tailored shopping lists. Culturally targeted nutrition messages (n = 864) and shopping lists (n = 3 formats) were developed. The food and nutrient database (n = 3000 top-selling products) was created using 12 months of retrospective sales data, and comprised 60%'healthier' products. Three months of baseline sales data were used to determine usual food purchases. Tailored resources were successfully mailed to 123 Māori, 52 Pacific and 346 non-Māori non-Pacific participants over the 6-month trial intervention period. Electronic supermarket sales data can be used to tailor nutrition education resources for a large number of ethnically diverse supermarket shoppers.

Topological Crystalline Insulators and Dirac Octets in Anti-perovskites

OpenAIRE

Hsieh, Timothy H.; Liu, Junwei; Fu, Liang

2014-01-01

We predict a new class of topological crystalline insulators (TCI) in the anti-perovskite material family with the chemical formula A$_3$BX. Here the nontrivial topology arises from band inversion between two $J=3/2$ quartets, which is described by a generalized Dirac equation for a "Dirac octet". Our work suggests that anti-perovskites are a promising new venue for exploring the cooperative interplay between band topology, crystal symmetry and electron correlation.

55-TW magnetically insulated transmission-line system: Design, simulations, and performance

Directory of Open Access Journals (Sweden)

W. A. Stygar

2009-12-01

Full Text Available We describe herein a system of self-magnetically insulated vacuum transmission lines (MITLs that operated successfully at 20 MA, 3 MV, and 55 TW. The system delivered the electromagnetic-power pulse generated by the Z accelerator to a physics-package load on over 1700 Z shots. The system included four levels that were electrically in parallel. Each level consisted of a water flare, vacuum-insulator stack, vacuum flare, and 1.3-m-radius conical outer MITL. The outputs of the four outer MITLs were connected in parallel by a 7.6-cm-radius 12-post double-post-hole vacuum convolute. The convolute added the currents of the four outer MITLs, and delivered the combined current to a single 6-cm-long inner MITL. The inner MITL delivered the current to the load. The total initial inductance of the stack-MITL system was 11 nH. A 300-element transmission-line-circuit model of the system has been developed using the tl code. The model accounts for the following: (i impedance and electrical length of each of the 300 circuit elements, (ii electron emission from MITL-cathode surfaces wherever the electric field has previously exceeded a constant threshold value, (iii Child-Langmuir electron loss in the MITLs before magnetic insulation is established, (iv MITL-flow-electron loss after insulation, assuming either collisionless or collisional electron flow, (v MITL-gap closure, (vi energy loss to MITL conductors operated at high lineal current densities, (vii time-dependent self-consistent inductance of an imploding z-pinch load, and (viii load resistance, which is assumed to be constant. Simulations performed with the tl model demonstrate that the nominal geometric outer-MITL-system impedance that optimizes overall performance is a factor of ∼3 greater than the convolute-load impedance, which is consistent with an analytic model of an idealized MITL-load system. Power-flow measurements demonstrate that, until peak current, the Z stack-MITL system

Forming Refractory Insulation On Copper Wire

Science.gov (United States)

Setlock, J.; Roberts, G.

1995-01-01

Alternative insulating process forms flexible coat of uncured refractory insulating material on copper wire. Coated wire formed into coil or other complex shape. Wire-coating apparatus forms "green" coat on copper wire. After wire coiled, heating converts "green" coat to refractory electrical insulator. When cured to final brittle form, insulating material withstands temperatures above melting temperature of wire. Process used to make coils for motors, solenoids, and other electrical devices to be operated at high temperatures.

High-Performance Slab-on-Grade Foundation Insulation Retrofits

Energy Technology Data Exchange (ETDEWEB)

Goldberg, Louise F. [NorthernSTAR, St. Paul, MN (United States); Mosiman, Garrett E. [NorthernSTAR, St. Paul, MN (United States)

2015-09-01

A more accurate assessment of slab-on-grade foundation insulation energy savings than traditionally possible is now feasible. This has been enabled by advances in whole building energy simulation with 3-dimensional foundation modelling integration at each time step together with an experimental measurement of the site energy savings of SOG foundation insulation. Ten SOG insulation strategies were evaluated on a test building to identify an optimum retrofit insulation strategy in a zone 6 climate (Minneapolis, MN). The optimum insulation strategy in terms of energy savings and cost effectiveness consisted of two components: (a) R-20 XPS insulation above grade, and, (b) R-20 insulation at grade (comprising an outer layer of R-10 insulation and an interior layer of R-12 poured polyurethane insulation) tapering to R-10 XPS insulation at half the below-grade wall height (the lower half of the stem wall was uninsulated).

Strong Energy-momentum Dispersion of Phonon Dressed Carriers in the Lightly Doped Band Insulator SrTiO3

International Nuclear Information System (INIS)

Meevasana, Warawat

2010-01-01

Much progress has been made recently in the study of the effects of electron-phonon (el-ph) coupling in doped insulators using angle resolved photoemission (ARPES), yielding evidence for the dominant role of el-ph interactions in underdoped cuprates. As these studies have been limited to doped Mott insulators, the important question arises how this compares with doped band insulators where similar el-ph couplings should be at work. The archetypical case is the perovskite SrTiO 3 (STO), well known for its giant dielectric constant of 10000 at low temperature, exceeding that of La 2 CuO 4 by a factor of 500. Based on this fact, it has been suggested that doped STO should be the archetypical bipolaron superconductor. Here we report an ARPES study from high-quality surfaces of lightly doped SrTiO 3 . Comparing to lightly doped Mott insulators, we find the signatures of only moderate electron-phonon coupling: a dispersion anomaly associated with the low frequency optical phonon with a λ(prime) ∼ 0.3 and an overall bandwidth renormalization suggesting an overall λ(prime) ∼ 0.7 coming from the higher frequency phonons. Further, we find no clear signatures of the large pseudogap or small polaron phenomena. These findings demonstrate that a large dielectric constant itself is not a good indicator of el-ph coupling and highlight the unusually strong effects of the el-ph coupling in doped Mott insulators.

Improved DC Gun and Insulator Assembly

Energy Technology Data Exchange (ETDEWEB)

Neubauer, Michael [Thomas Jefferson National Accelerator Facility (TJNAF), Newport News, VA (United States)

2015-01-11

Many user facilities such as synchrotron radiation light sources and free electron lasers rely on DC high voltage photoguns with internal field gradients as high as 10 to 15 MV/m. These high gradients often lead to field emission which poses serious problems for the photocathode used to generate the electron beam and the ceramic insulators used to bias the photocathode at high voltage. Ceramic insulators are difficult to manufacture, require long commissioning times, and have poor reliability, in part because energetic electrons bury themselves in the ceramic causing a buildup of charge and eventual puncture, and also because large diameter ceramics are difficult to braze reliably. The lifetimes of photo cathodes inside high current DC guns exhibiting field emission are limited to less than a hundred hours. Reducing the surface gradients on the metals reduces the field emission, which serves to maintain the required ultrahigh vacuum condition. A novel gun design with gradients around 5 MV/m and operating at 350 kV, a major improvement over existing designs, was proposed that allows for the in-situ replacement of photo cathodes in axially symmetric designs using inverted ceramics. In this project, the existing JLAB CEBAF asymmetric gun design with an inverted ceramic support was modeled and the beam dynamics characterized. An improved structure was designed that reduces the surface gradients and improves the beam optics. To minimize the surface gradients, a number of electrostatic gun designs were studied to determine the optimum configuration of the critical electrodes within the gun structure. Coating experiments were carried out to create a charge dissipative coating for cylindrical ceramics. The phase II proposal, which was not granted, included the design and fabrication of an axially symmetric DC Gun with an inverted ceramic that would operate with less than 5 MV/m at 350 kV and would be designed with an in-situ replaceable photo-cathode.

The inaccuracy of heat transfer characteristics of insulated and non-insulated circular duct while neglecting the influence of heat radiation

International Nuclear Information System (INIS)

Hsien, T.-L.; Wong, K.-L.; Yu, S.-J.

2009-01-01

The non-insulated and insulated ducts are commonly applied in the industries and various buildings, because the heat radiation equation contains the 4th order exponential of temperature which is very complicate in calculations. Most heat transfer experts recognized from their own experiences that the heat radiation effect can be ignored due to the small temperature difference between insulated and non-insulated surface and surroundings. This paper studies in detail to check the inaccuracies of heat transfer characteristics non-insulated and insulated duct by comparing the results between considering and neglecting heat radiation effect. It is found that neglecting the heat radiation effect is likely to produce large errors of non-insulated and thin-insulated ducts in situations of ambient air with low external convection heat coefficients and larger surface emissivity, especially while the ambient air temperature is different from that of surroundings and greater internal fluid convection coefficients. It is also found in this paper that using greater duct surface emissivity can greatly improve the heat exchanger effect and using smaller insulated surface emissivity can obtain better insulation.

Linear accelerator with x-ray absorbing insulators

International Nuclear Information System (INIS)

Rose, P.H.

1975-01-01

Annular insulators for supporting successive annular electrodes in a linear accelerator have embedded x-ray absorbing shield structures extending around the accelerating path. The shield members are disposed to intercept x-ray radiation without disrupting the insulative effect of the insulator members. In preferred forms, the structure comprises a plurality of annular members of heavy metal disposed in an x-ray blocking array, spaced from each other by the insulating substance of the insulator member. (auth)

Optical study on metal-insulator change in PrFe4P12 under high pressure

International Nuclear Information System (INIS)

Irizawa, Akinori; Sato, Kazuyuki; Kobayashi, Masayo; Nanba, Takao; Matsunami, Masaharu; Sugawara, Hitoshi; Sato, Hideyuki

2007-01-01

The optical study has been performed on filled-skutterudite PrFe 4 P 12 applying pressure up to 16 GPa. The reflectivity at far-infrared (FIR) region showed that the metallic reflectivity looses its intensity and the weak phonon peaks at ambient pressure become prominent with pressures at lower temperature. It insists that the electronic states near Fermi level in this compound changes drastically from metallic properties to insulating ones at high pressures and low temperatures, and the insulating phase persists up to 16 GPa against the electrical resistivity data under pressure

Insulator applications in a Tokamak reactor

International Nuclear Information System (INIS)

Leger, D.

1986-06-01

Insulators, among which insulators ceramics, have great potential applications in fusion reactors. They will be used for all plasma-facing components as protection and, magnetic fusion devices being subject to large electrical currents flowing in any parts of the device, for their electrical insulating properties

Availability, Level of Use and Constraints to Use of Electronic Resources by Law Lecturers in Public Universities in Nigeria

Science.gov (United States)

Amusa, Oyintola Isiaka; Atinmo, Morayo

2016-01-01

(Purpose) This study surveyed the level of availability, use and constraints to use of electronic resources among law lecturers in Nigeria. (Methodology) Five hundred and fifty-two law lecturers were surveyed and four hundred and forty-two responded. (Results) Data analysis revealed that the level of availability of electronic resources for the…

Electron collisions in gas switches

International Nuclear Information System (INIS)

Christophorou, L.G.

1989-01-01

Many technologies rely on the conduction/insulation properties of gaseous matter for their successful operation. Many others (e.g., pulsed power technologies) rely on the rapid change (switching or modulation) of the properties of gaseous matter from an insulator to a conductor and vice versa. Studies of electron collision processes in gases aided the development of pulsed power gas switches, and in this paper we shall briefly illustrate the kind of knowledge on electron collision processes which is needed to optimize the performance of such switching devices. To this end, we shall refer to three types of gas switches: spark gap closing, self-sustained diffuse discharge closing, and externally-sustained diffuse discharge opening. 24 refs., 15 figs., 2 tabs

A transparent electrochromic metal-insulator switching device with three-terminal transistor geometry

Science.gov (United States)

Katase, Takayoshi; Onozato, Takaki; Hirono, Misako; Mizuno, Taku; Ohta, Hiromichi

2016-05-01

Proton and hydroxyl ion play an essential role for tuning functionality of oxides because their electronic state can be controlled by modifying oxygen off-stoichiometry and/or protonation. Tungsten trioxide (WO3), a well-known electrochromic (EC) material for smart window, is a wide bandgap insulator, whereas it becomes a metallic conductor HxWO3 by protonation. Although one can utilize electrochromism together with metal-insulator (MI) switching for one device, such EC-MI switching cannot be utilized in current EC devices because of their two-terminal structure with parallel-plate configuration. Here we demonstrate a transparent EC-MI switchable device with three-terminal TFT-type structure using amorphous (a-) WO3 channel layer, which was fabricated on glass substrate at room temperature. We used water-infiltrated nano-porous glass, CAN (calcium aluminate with nano-pores), as a liquid-leakage-free solid gate insulator. At virgin state, the device was fully transparent in the visible-light region. For positive gate voltage, the active channel became dark blue, and electrical resistivity of the a-WO3 layer drastically decreased with protonation. For negative gate voltage, deprotonation occurred and the active channel returned to transparent insulator. Good cycleability of the present transparent EC-MI switching device would have potential for the development of advanced smart windows.

Asymmetric d-wave superconducting topological insulator in proximity with a magnetic order

Science.gov (United States)

Khezerlou, M.; Goudarzi, H.; Asgarifar, S.

2018-02-01

In the framework of the Dirac-Bogoliubov-de Gennes formalism, we investigate the transport properties in the surface of a 3-dimensional topological insulator-based hybrid structure, where the ferromagnetic and superconducting orders are simultaneously induced to the surface states via the proximity effect. The superconductor gap is taken to be spin-singlet d-wave symmetry. The asymmetric role of this gap respect to the electron-hole exchange, in one hand, affects the topological insulator superconducting binding excitations and, on the other hand, gives rise to forming distinct Majorana bound states at the ferromagnet/superconductor interface. We propose a topological insulator N/F/FS junction and proceed to clarify the role of d-wave asymmetry pairing in the resulting subgap and overgap tunneling conductance. The perpendicular component of magnetizations in F and FS regions can be at the parallel and antiparallel configurations leading to capture the experimentally important magnetoresistance (MR) of junction. It is found that the zero-bias conductance is strongly sensitive to the magnitude of magnetization in FS region mzfs and orbital rotated angle α of superconductor gap. The negative MR only occurs in zero orbital rotated angle. This result can pave the way to distinguish the unconventional superconducting state in the relating topological insulator hybrid structures.

Vacuum-insulated catalytic converter

Science.gov (United States)

Benson, David K.

2001-01-01

A catalytic converter has an inner canister that contains catalyst-coated substrates and an outer canister that encloses an annular, variable vacuum insulation chamber surrounding the inner canister. An annular tank containing phase-change material for heat storage and release is positioned in the variable vacuum insulation chamber a distance spaced part from the inner canister. A reversible hydrogen getter in the variable vacuum insulation chamber, preferably on a surface of the heat storage tank, releases hydrogen into the variable vacuum insulation chamber to conduct heat when the phase-change material is hot and absorbs the hydrogen to limit heat transfer to radiation when the phase-change material is cool. A porous zeolite trap in the inner canister absorbs and retains hydrocarbons from the exhaust gases when the catalyst-coated substrates and zeolite trap are cold and releases the hydrocarbons for reaction on the catalyst-coated substrate when the zeolite trap and catalyst-coated substrate get hot.

Electrostatically driven plasma hydrodynamic instability. I. The failure of vacuum-insulated, long wavelength laser fusion pellets

International Nuclear Information System (INIS)

Levermore, C.D.; Caflisch, R.E.; Wood, L.L.

1977-10-01

Longer wavelength (e.g., lambda = 10.5 μm) laser radiation generates relatively large fluxes of superthermal electrons that penetrate and preheat the cores of such pellets at early times in their implosion history, precluding their efficient subsequent compression. It has been proposed to separate the outermost shell of such pellets (onto which the laser light is directed) from its inner regions by a vacuum layer, thereby ''insulating'' these inner portions from superthermal electron degradation. We consider this proposal analytically and computationally, and find it to be questionable, due to the rapid penetration of the vacuum insulation layer by plasma streamers from the laser heated shells, which are accelerated to velocities of the order of those of the superthermal electrons by an electrostatic analog of the Rayleigh-Taylor instability. Results of such considerations are presented. The results developed also apply to a variety of formally similar phenomena, ranging from the relativistic edge of supernova photospheres to diode breakdown in REB machines

A systematic review of portable electronic technology for health education in resource-limited settings.

Science.gov (United States)

McHenry, Megan S; Fischer, Lydia J; Chun, Yeona; Vreeman, Rachel C

2017-08-01

The objective of this study is to conduct a systematic review of the literature of how portable electronic technologies with offline functionality are perceived and used to provide health education in resource-limited settings. Three reviewers evaluated articles and performed a bibliography search to identify studies describing health education delivered by portable electronic device with offline functionality in low- or middle-income countries. Data extracted included: study population; study design and type of analysis; type of technology used; method of use; setting of technology use; impact on caregivers, patients, or overall health outcomes; and reported limitations. Searches yielded 5514 unique titles. Out of 75 critically reviewed full-text articles, 10 met inclusion criteria. Study locations included Botswana, Peru, Kenya, Thailand, Nigeria, India, Ghana, and Tanzania. Topics addressed included: development of healthcare worker training modules, clinical decision support tools, patient education tools, perceptions and usability of portable electronic technology, and comparisons of technologies and/or mobile applications. Studies primarily looked at the assessment of developed educational modules on trainee health knowledge, perceptions and usability of technology, and comparisons of technologies. Overall, studies reported positive results for portable electronic device-based health education, frequently reporting increased provider/patient knowledge, improved patient outcomes in both quality of care and management, increased provider comfort level with technology, and an environment characterized by increased levels of technology-based, informal learning situations. Negative assessments included high investment costs, lack of technical support, and fear of device theft. While the research is limited, portable electronic educational resources present promising avenues to increase access to effective health education in resource-limited settings, contingent

Graphene-insulator-semiconductor capacitors as superior test structures for photoelectric determination of semiconductor devices band diagrams

Directory of Open Access Journals (Sweden)

K. Piskorski

2018-05-01

Full Text Available We report on the advantages of using Graphene-Insulator-Semiconductor (GIS instead of Metal-Insulator-Semiconductor (MIS structures in reliable and precise photoelectric determination of the band alignment at the semiconductor-insulator interface and of the insulator band gap determination. Due to the high transparency to light of the graphene gate in GIS structures large photocurrents due to emission of both electrons and holes from the substrate and negligible photocurrents due to emission of carriers from the gate can be obtained, which allows reliable determination of barrier heights for both electrons, Ee and holes, Eh from the semiconductor substrate. Knowing the values of both Ee and Eh allows direct determination of the insulator band gap EG(I. Photoelectric measurements were made of a series of Graphene-SiO2-Si structures and an example is shown of the results obtained in sequential measurements of the same structure giving the following barrier height values: Ee = 4.34 ± 0.01 eV and Eh = 4.70 ± 0.03 eV. Based on this result and results obtained for other structures in the series we conservatively estimate the maximum uncertainty of both barrier heights estimations at ± 0.05 eV. This sets the SiO2 band gap estimation at EG(I = 7.92 ± 0.1 eV. It is shown that widely different SiO2 band gap values were found by research groups using various determination methods. We hypothesize that these differences are due to different sensitivities of measurement methods used to the existence of the SiO2 valence band tail.

Graphene-insulator-semiconductor capacitors as superior test structures for photoelectric determination of semiconductor devices band diagrams

Science.gov (United States)

Piskorski, K.; Passi, V.; Ruhkopf, J.; Lemme, M. C.; Przewlocki, H. M.

2018-05-01

We report on the advantages of using Graphene-Insulator-Semiconductor (GIS) instead of Metal-Insulator-Semiconductor (MIS) structures in reliable and precise photoelectric determination of the band alignment at the semiconductor-insulator interface and of the insulator band gap determination. Due to the high transparency to light of the graphene gate in GIS structures large photocurrents due to emission of both electrons and holes from the substrate and negligible photocurrents due to emission of carriers from the gate can be obtained, which allows reliable determination of barrier heights for both electrons, Ee and holes, Eh from the semiconductor substrate. Knowing the values of both Ee and Eh allows direct determination of the insulator band gap EG(I). Photoelectric measurements were made of a series of Graphene-SiO2-Si structures and an example is shown of the results obtained in sequential measurements of the same structure giving the following barrier height values: Ee = 4.34 ± 0.01 eV and Eh = 4.70 ± 0.03 eV. Based on this result and results obtained for other structures in the series we conservatively estimate the maximum uncertainty of both barrier heights estimations at ± 0.05 eV. This sets the SiO2 band gap estimation at EG(I) = 7.92 ± 0.1 eV. It is shown that widely different SiO2 band gap values were found by research groups using various determination methods. We hypothesize that these differences are due to different sensitivities of measurement methods used to the existence of the SiO2 valence band tail.

Spin-transfer torque generated by a topological insulator

KAUST Repository

Mellnik, A. R.

2014-07-23

Magnetic devices are a leading contender for the implementation of memory and logic technologies that are non-volatile, that can scale to high density and high speed, and that do not wear out. However, widespread application of magnetic memory and logic devices will require the development of efficient mechanisms for reorienting their magnetization using the least possible current and power. There has been considerable recent progress in this effort; in particular, it has been discovered that spin-orbit interactions in heavy-metal/ferromagnet bilayers can produce strong current-driven torques on the magnetic layer, via the spin Hall effect in the heavy metal or the Rashba-Edelstein effect in the ferromagnet. In the search for materials to provide even more efficient spin-orbit-induced torques, some proposals have suggested topological insulators, which possess a surface state in which the effects of spin-orbit coupling are maximal in the sense that an electron\\' s spin orientation is fixed relative to its propagation direction. Here we report experiments showing that charge current flowing in-plane in a thin film of the topological insulator bismuth selenide (Bi2Se3) at room temperature can indeed exert a strong spin-transfer torque on an adjacent ferromagnetic permalloy (Ni81Fe19) thin film, with a direction consistent with that expected from the topological surface state. We find that the strength of the torque per unit charge current density in Bi 2Se3 is greater than for any source of spin-transfer torque measured so far, even for non-ideal topological insulator films in which the surface states coexist with bulk conduction. Our data suggest that topological insulators could enable very efficient electrical manipulation of magnetic materials at room temperature, for memory and logic applications. © 2014 Macmillan Publishers Limited. All rights reserved.

Handleable shapes of thermal insulation material

Energy Technology Data Exchange (ETDEWEB)

Hughes, J. T.

1989-01-17

Handleable and machineable shapes of thermal insulation material are made by compacting finely divided thermal insulation material into the cells of a reinforcing honeycomb insulation material into the cells of a reinforcing honeycomb structure. The finely divided thermal insulation material may be, for example, silica aerogel, pyrogenic silica, carbon black, silica gel, volatilised silica, calcium silicate, vermiculate or perlite, or finely divided metal oxides such as alumina or titania. The finely divided thermal insulation material may include an infra-red opacifier and/or reinforcing fibres. The reinforcing honeycomb structure may be made from, for example, metals such as aluminium foil, inorganic materials such as ceramics, organic materials such as plastics materials, woven fabrics or paper. A rigidiser may be employed. The shapes of thermal insulation material are substantially rigid and may be machines, for example by mechanical or laser cutting devices, or may be formed, for example by rolling, into curved or other shaped materials. 12 figs.

Lateral topological crystalline insulator heterostructure

Science.gov (United States)

Sun, Qilong; Dai, Ying; Niu, Chengwang; Ma, Yandong; Wei, Wei; Yu, Lin; Huang, Baibiao

2017-06-01

The emergence of lateral heterostructures fabricated by two-dimensional building blocks brings many exciting realms in material science and device physics. Enriching available nanomaterials for creating such heterostructures and enabling the underlying new physics is highly coveted for the integration of next-generation devices. Here, we report a breakthrough in lateral heterostructure based on the monolayer square transition-metal dichalcogenides MX2 (M  =  W, X  =  S/Se) modules. Our results reveal that the MX2 lateral heterostructure (1S-MX2 LHS) can possess excellent thermal and dynamical stability. Remarkably, the highly desired two-dimensional topological crystalline insulator phase is confirmed by the calculated mirror Chern number {{n}\\text{M}}=-1 . A nontrivial band gap of 65 meV is obtained with SOC, indicating the potential for room-temperature observation and applications. The topologically protected edge states emerge at the edges of two different nanoribbons between the bulk band gap, which is consistent with the mirror Chern number. In addition, a strain-induced topological phase transition in 1S-MX2 LHS is also revealed, endowing the potential utilities in electronics and spintronics. Our predictions not only introduce new member and vitality into the studies of lateral heterostructures, but also highlight the promise of lateral heterostructure as appealing topological crystalline insulator platforms with excellent stability for future devices.

Reusable Surface Insulation

Science.gov (United States)

1997-01-01

Advanced Flexible Reusable Surface Insulation, developed by Ames Research Center, protects the Space Shuttle from the searing heat that engulfs it on reentry into the Earth's atmosphere. Initially integrated into the Space Shuttle by Rockwell International, production was transferred to Hi-Temp Insulation Inc. in 1974. Over the years, Hi-Temp has created many new technologies to meet the requirements of the Space Shuttle program. This expertise is also used commercially, including insulation blankets to cover aircrafts parts, fire barrier material to protect aircraft engine cowlings and aircraft rescue fire fighter suits. A Fire Protection Division has also been established, offering the first suit designed exclusively by and for aircraft rescue fire fighters. Hi-Temp is a supplier to the Los Angeles City Fire Department as well as other major U.S. civil and military fire departments.

PHERMEX electron gun development

International Nuclear Information System (INIS)

Builta, L.A.; Elliott, J.C.; Moir, D.C.; Starke, T.P.; Vecere, C.A.

1983-01-01

The PHERMEX facility is a 50-MHz standing-wave linear accelerator. Electrons are injected, accelerated, and transported to a tungsten target where bremsstrahlung x rays are generated for flash radiography of hydrodynamic systems. The purpose of this article is to describe the progress of PHERMEX electron gun development. The goal of this program is to generate and transport a 200-ns, 1-MV, 1-kA electron beam into the first PHERMEX accelerating cavity. The standard gun is operated at a pulse voltage of 550 kV, which is the limit determined by internal breakdown of the vacuum insulator. This insulator has been redesigned, and the gun has been pulsed at 750 kV without internal breakdown. At present, the current output is not limited by voltage but by a phenomenon called pulse shortening, which occurs at a pulse voltage of approximately 650 kV. The phenomenon has been investigated and the results are presented

Magnetism and the low-energy electronic structure of Mott insulators K{sub 2}CoF{sub 4} and SrMnO{sub 3} perovskites

Energy Technology Data Exchange (ETDEWEB)

Nalecz, D.M., E-mail: sfnalecz@cyf-kr.edu.pl [Institute of Physics, Pedagogical University, 30-084, Krakow (Poland); Radwanski, R.J. [Institute of Physics, Pedagogical University, 30-084, Krakow (Poland); Center of Solid State Physics, S" n" t Filip 5, 31-150, Krakow (Poland); Ropka, Z. [Center of Solid State Physics, S" n" t Filip 5, 31-150, Krakow (Poland)

2016-09-01

For Mott insulators, K{sub 2}CoF{sub 4} and SrMnO{sub 3}, we have calculated, in the purely ionic model, the low-energy electronic structure both in the paramagnetic and magnetic state as well as zero-temperature magnetic moment, its direction and its temperature dependence. We have calculated the octahedral crystal-field strength 10Dq to be 0.98 and 2.25 eV. We claim that for an adequate theoretical description of magnetic properties even small local distortions and the intra-atomic relativistic spin-orbit coupling have to be taken into account. Our studies have revealed a strong interplay of the magnetism, the orbital moment in particular, with the local crystallographic structure. The calculated orbital moment in K{sub 2}CoF{sub 4} is very large, 1.06 μ{sub B}, giving 30% contribution to the total moment - this result points the necessity to “unquench” the orbital magnetism in 3d compounds. We consistently described magnetic and some optical properties of these compounds, containing atoms with incomplete 3d shell, in agreement with their insulating ground state. - Highlights: • The octahedral crystal-field 10Dq amounts to 0.98 and 2.25 eV in K{sub 2}CoF{sub 4} and SrMnO{sub 3}. • The low-energy electronic structures in the magnetic state is displayed. • There is a strong interplay of the magnetism and the local crystal structure. • Temperature dependence of the Mn{sup 4+}- ion magnetic moment has been described. • Relativistic spin-orbit coupling is indispensable for description of 3d magnetism.

Electrically controlled crossing of energy levels in quantum dots in two-dimensional topological insulators

Energy Technology Data Exchange (ETDEWEB)

Sukhanov, Aleksei A.

2017-05-15

We study the energy spectra of bound states in quantum dots (QDs) formed by an electrostatic potential in two-dimensional topological insulator (TI) and their transformation with changes in QD depth and radius. It is found that, unlike a trivial insulator, the energy difference between the levels of the ground state and first excited state can decrease with decreasing the radius and increasing the depth of the QD so that these levels intersect under some critical condition. The crossing of the levels results in unusual features of optical properties caused by intraceneter electron transitions. In particular, it leads to significant changes of light absorption due to electron transitions between such levels and to the transient electroluminescence induced by electrical tuning of QD and TI parameters. In the case of magnetic TIs, the polarization direction of the absorbed or emitted circularly polarized light is changed due to the level crossing.

Electrically controlled crossing of energy levels in quantum dots in two-dimensional topological insulators

Science.gov (United States)

Sukhanov, Aleksei A.

2017-05-01

We study the energy spectra of bound states in quantum dots (QDs) formed by an electrostatic potential in two-dimensional topological insulator (TI) and their transformation with changes in QD depth and radius. It is found that, unlike a trivial insulator, the energy difference between the levels of the ground state and first excited state can decrease with decreasing the radius and increasing the depth of the QD so that these levels intersect under some critical condition. The crossing of the levels results in unusual features of optical properties caused by intraceneter electron transitions. In particular, it leads to significant changes of light absorption due to electron transitions between such levels and to the transient electroluminescence induced by electrical tuning of QD and TI parameters. In the case of magnetic TIs, the polarization direction of the absorbed or emitted circularly polarized light is changed due to the level crossing.

Translucent insulating building envelope

DEFF Research Database (Denmark)

Rahbek, Jens Eg

1997-01-01

A new type of translucent insulating material has been tested. This material is made of Celulose-Acetat and have a honey-comb structure. The material has a high solar transmittance and is highly insulating. The material is relatively cheap to produce. Danish Title: Translucent isolerende klimaskærm....

Metal-insulator transition at the LaAlO3/SrTiO3 interface revisited: A hybrid functional study

KAUST Repository

Cossu, Fabrizio

2013-07-17

We investigate the electronic properties of the LaAlO3/SrTiO3 interface using density functional theory. In contrast to previous studies, which relied on (semi-)local functionals and the GGA+U method, we here use a recently developed hybrid functional to determine the electronic structure. This approach offers the distinct advantage of accessing both the metallic and insulating multilayers on a parameter-free equal footing. As compared to calculations based on semilocal GGA functionals, our hybrid functional calculations lead to a considerably increased band gap for the insulating systems. The details of the electronic structure show substantial deviations from those obtained by GGA calculations. This casts severe doubts on all previous results based on semilocal functionals. In particular, corrections using rigid band shifts (“scissors operator”) cannot lead to valid results.

Insulators for fusion applications

International Nuclear Information System (INIS)

1987-04-01

Design studies for fusion devices and reactors have become more detailed in recent years and with this has come a better understanding of requirements and operating conditions for insulators in these machines. Ceramic and organic insulators are widely used for many components of fusion devices and reactors namely: radio frequency (RF) energy injection systems (BeO, Al 2 O 3 , Mg Al 2 O 4 , Si 3 N 4 ); electrical insulation for the torus structure (SiC, Al 2 O 3 , MgO, Mg Al 2 O 4 , Si 4 Al 2 O 2 N 6 , Si 3 N 4 , Y 2 O 3 ); lightly-shielded magnetic coils (MgO, MgAl 2 O 4 ); the toroidal field coil (epoxies, polyimides), neutron shield (B 4 C, TiH 2 ); high efficiency electrical generation; as well as the generation of very high temperatures for high efficiency hydrogen production processes (ZrO 2 and Al 2 O 3 - mat, graphite and carbon - felt). Timely development of insulators for fusion applications is clearly necessary. Those materials to be used in fusion machines should show high resistance to radiation damage and maintain their structural integrity. Now the need is urgent for a variety of radiation resistant materials, but much effort in these areas is required for insulators to be considered seriously by the design community. This document contains 14 papers from an IAEA meeting. It was the objective of this meeting to identify existing problems in analysing various situations of applications and requirements of electrical insulators and ceramics in fusion and to recommend strategies and different stages of implementation. This meeting was endorsed by the International Fusion Research Council

Valorization of Tunisian alfa fibres and sumac tannins for the elaboration of biodegradable insulating panels

Science.gov (United States)

Saad, Houda; Charrier, Bertrand; Ayed, Naceur; Charrier-El-Bouhtoury, Fatima

2017-10-01

Alfa leaves are important renewable raw materials in Tunisia where they are used basically in handcrafts and paper industry. Sumac is also an abundant species in Tunisia known for its high tannin content and is basically used in traditional medicine. To valorize these natural resources, we studied, for the first time, the possibility of making insulating panels based on alfa fibres and sumac tannins based adhesive. Firstly, alfa leaves were treated with an alkali solution as it is one of the standard procedures commonly used in the paper industry to extract cellulosic fibres. Mercerization effects were studied by characterizing fibres thermal properties and fibres surface morphology. Secondly, the sumac tannin based resin was formulated and characterized. Finally, the insulating panel was elaborated and characterized by determining its thermal conductivity. The thermal gravimetric analysis results show improvement in the thermal stability of fibres after alkali treatment. Environmental Scanning Electron Microscopy showed changes on treated alfa surface which could promote the fibre-matrix adhesion. The reactivity of sumac tannins to formaldehyde test (Stiasny number) showed the possible use of sumac tannins in wood adhesive formulation. Thermomechanical analysis and strength analysis of sumac tannin/hexamin based resin highlighted acceptable bonding properties. The thermal conductivity measurement showed an average value equal to 0.110 W/m K. Contribution to the topical issue "Materials for Energy harvesting, conversion and storage II (ICOME 2016)", edited by Jean-Michel Nunzi, Rachid Bennacer and Mohammed El Ganaoui

High Performance Slab-on-Grade Foundation Insulation Retrofits

Energy Technology Data Exchange (ETDEWEB)

Goldberg, Louise F. [NorthernSTAR, St. Paul, MN (United States); Mosiman, Garrett E. [NorthernSTAR, St. Paul, MN (United States)

2015-09-01

?A more accurate assessment of SOG foundation insulation energy savings than traditionally possible is now feasible. This has been enabled by advances in whole building energy simulation with 3-dimensional foundation modelling integration at each time step together with an experimental measurement of the site energy savings of SOG foundation insulation. Ten SOG insulation strategies were evaluated on a test building to identify an optimum retrofit insulation strategy in a zone 6 climate (Minneapolis, MN). The optimum insulation strategy in terms of energy savings and cost effectiveness consisted of two components: (a) R-20 XPS insulation above grade, and, (b) R-20 insulation at grade (comprising an outer layer of R-10 insulation and an interior layer of R-12 poured polyurethane insulation) tapering to R-10 XPS insulation at half the below-grade wall height (the lower half of the stem wall was uninsulated). The optimum insulation strategy was applied to single and multi-family residential buildings in climate zone 4 - 7. The highest site energy savings of 5% was realized for a single family home in Duluth, MN, and the lowest savings of 1.4 % for a 4-unit townhouse in Richmond, VA. SOG foundation insulation retrofit simple paybacks ranged from 18 to 47 years. There are other benefits of SOG foundation insulation resulting from the increase in the slab surface temperatures. These include increased occupant thermal comfort, and a decrease in slab surface condensation particularly around the slab perimeter.

Electric breakdown of high polymer insulating materials at cryogenic temperature

International Nuclear Information System (INIS)

Kim, Sanhyon; Yoshino, Katsumi

1985-01-01

Cryogenic properties : temperature dependence of E sub(b) and effects of media upon E sub(b) were investigated on several high polymers. Temperature conditions were provided by liquid He (4.2 K), liquid N 2 (77 K) and cryogen (dry ice-methyl alcohol, 194 K). Silicone oil was used also at ambient temperature and elevated temperature. Polymer film coated with gold by vacuum evaporation was placed in cryostat, and high tension from pulse generator was applied to the film. Dielectric breakdowns were detected by oscilloscope and observed visually. The results of experiment are summerized as follow. (1) E sub(b) of film in He is affected by medium remarkably, and covering with 3-methyl pentane is effective for increasing E sub(b). (2) Temperature dependence of E sub(b) was not recognized in cryogenic temperature below liquid N 2 . (3) Temperature characteristic of E sub(b) changes considerably at the critical temperature T sub(c), and T sub(c) is dependent on material. (4) Strength against dielectric breakdown under cryogenic temperature is not affected by bridging caused by irradiation of electron beam. (5) Dielectric breakdown is thought to be caused by electronic process such as electron avalanche. Consequently, for designing insulation for the temperature below liquid He, insulation design for liquid N 2 is thought to be sufficient. However, the degradation and breakdown by mechanical stress under cryogenic temperature must be taken into consideration. (Ishimitsu, A.)

Electrostatic doping of a Mott insulator in an oxide heterostructure: the case of LaVO{sub 3}/SrTiO{sub 3}

Energy Technology Data Exchange (ETDEWEB)

Mueller, Andreas; Pfaff, Florian; Sing, Michael; Claessen, Ralph [Physikalisches Insititut and Roentgen Research Center for Complex Material Systems, Universitaet Wuerzburg, D-97074 Wuerzburg (Germany); Boschker, Hans; Kamp, Martin; Koster, Gertjan; Rijnders, Guus [Faculty of Science and Technology and MESA-plus Institute for Nanotechnology, University of Twente, 7500 AE Enschede (Netherlands)

2012-07-01

The discovery of a quasi-two-dimensional electron system at the interface between the two band insulators LaAlO{sub 3} and SrTiO{sub 3} has triggered intense investigations of oxide heterostructures with other material combinations. The hope is that by combining a polar overlayer with a non-polar substrate electronic reconstruction will lead to highly mobile interface charge carriers with special properties. The formation of a conducting interface layer in epitaxial LaVO{sub 3}/SrTiO{sub 3}, where LaVO{sub 3} is a Mott insulator, is studied by transport measurements and hard X-ray photoelectron spectroscopy. We identify an insulator-to-metal transition above a critical LaVO{sub 3} thickness with transport properties similar to those recently reported for LaAlO{sub 3}/SrTiO{sub 3} interfaces. Interestingly, our photoemission measurements give evidence that electronic charge is transferred exclusively to the LaVO{sub 3}-side of the interface caused by an electronic reconstruction within the film itself. This opens the opportunity to study a band-filling controlled Mott transition induced by a purely electrostatic mechanism.

On-surface synthesis on a bulk insulator surface

Science.gov (United States)

Richter, Antje; Floris, Andrea; Bechstein, Ralf; Kantorovich, Lev; Kühnle, Angelika

2018-04-01

On-surface synthesis has rapidly emerged as a most promising approach to prepare functional molecular structures directly on a support surface. Compared to solution synthesis, performing chemical reactions on a surface offers several exciting new options: due to the absence of a solvent, reactions can be envisioned that are otherwise not feasible due to the insolubility of the reaction product. Perhaps even more important, the confinement to a two-dimensional surface might enable reaction pathways that are not accessible otherwise. Consequently, on-surface synthesis has attracted great attention in the last decade, with an impressive number of classical reactions transferred to a surface as well as new reactions demonstrated that have no classical analogue. So far, the majority of the work has been carried out on conducting surfaces. However, when aiming for electronic decoupling of the resulting structures, e.g. for the use in future molecular electronic devices, non-conducting surfaces are highly desired. Here, we review the current status of on-surface reactions demonstrated on the (10.4) surface of the bulk insulator calcite. Besides thermally induced C-C coupling of halogen-substituted aryls, photochemically induced [2  +  2] cycloaddition has been proven possible on this surface. Moreover, experimental evidence exists for coupling of terminal alkynes as well as diacetylene polymerization. While imaging of the resulting structures with dynamic atomic force microscopy provides a direct means of reaction verification, the detailed reaction pathway often remains unclear. Especially in cases where the presence of metal atoms is known to catalyze the corresponding solution chemistry reaction (e.g. in the case of the Ullmann reaction), disclosing the precise reaction pathway is of importance to understand and generalize on-surface reactivity on a bulk insulator surface. To this end, density-functional theory calculations have proven to provide atomic

SAGES: a suite of freely-available software tools for electronic disease surveillance in resource-limited settings.

Directory of Open Access Journals (Sweden)

Sheri L Lewis

Full Text Available Public health surveillance is undergoing a revolution driven by advances in the field of information technology. Many countries have experienced vast improvements in the collection, ingestion, analysis, visualization, and dissemination of public health data. Resource-limited countries have lagged behind due to challenges in information technology infrastructure, public health resources, and the costs of proprietary software. The Suite for Automated Global Electronic bioSurveillance (SAGES is a collection of modular, flexible, freely-available software tools for electronic disease surveillance in resource-limited settings. One or more SAGES tools may be used in concert with existing surveillance applications or the SAGES tools may be used en masse for an end-to-end biosurveillance capability. This flexibility allows for the development of an inexpensive, customized, and sustainable disease surveillance system. The ability to rapidly assess anomalous disease activity may lead to more efficient use of limited resources and better compliance with World Health Organization International Health Regulations.

New mechanism of semiconductor polarization at the interface with an organic insulator

International Nuclear Information System (INIS)

Yafyasov, A. M.; Bogevolnov, V. B.; Ryumtsev, E. I.; Kovshik, A. P.; Mikhailovski, V. Yu.

2017-01-01

A semiconductor—organic-insulator system with spatially distributed charge is created with a uniquely low density of fast surface states (N_s_s) at the interface. A system with N_s_s ≈ 5 × 10"1"0 cm"–"2 is obtained for the example of n-Ge and the physical characteristics of the interface are measured for this system with liquid and metal field electrodes. For a system with an organic insulator, the range of variation of the surface potential from enrichment of the space-charge region of the semiconductor to the inversion state is first obtained without changing the mechanism of interaction between the adsorbed layer and the semiconductor surface. The effect of enhanced polarization of the space-charge region of the semiconductor occurs due to a change in the spatial structure of mobile charge in the organic dielectric layer. The system developed in the study opens up technological opportunities for the formation of a new generation of electronic devices based on organic film structures and for experimental modeling of the electronic properties of biological membranes.

New mechanism of semiconductor polarization at the interface with an organic insulator

Energy Technology Data Exchange (ETDEWEB)

Yafyasov, A. M., E-mail: yafyasov@gmail.com; Bogevolnov, V. B.; Ryumtsev, E. I.; Kovshik, A. P. [St. Petersburg State University (Russian Federation); Mikhailovski, V. Yu. [Interdisciplinary Resource Center for Nanotechnology at St. Petersburg University (Russian Federation)

2017-02-15

A semiconductor—organic-insulator system with spatially distributed charge is created with a uniquely low density of fast surface states (N{sub ss}) at the interface. A system with N{sub ss} ≈ 5 × 10{sup 10} cm{sup –2} is obtained for the example of n-Ge and the physical characteristics of the interface are measured for this system with liquid and metal field electrodes. For a system with an organic insulator, the range of variation of the surface potential from enrichment of the space-charge region of the semiconductor to the inversion state is first obtained without changing the mechanism of interaction between the adsorbed layer and the semiconductor surface. The effect of enhanced polarization of the space-charge region of the semiconductor occurs due to a change in the spatial structure of mobile charge in the organic dielectric layer. The system developed in the study opens up technological opportunities for the formation of a new generation of electronic devices based on organic film structures and for experimental modeling of the electronic properties of biological membranes.

Use and Cost of Electronic Resources in Central Library of Ferdowsi University Based on E-metrics

Directory of Open Access Journals (Sweden)

Mohammad Reza Davarpanah

2012-07-01

Full Text Available The purpose of this study was to investigate the usage of electronic journals in Ferdowsi University, Iran based on e-metrics. The paper also aimed to emphasize the analysis of cost-benefit and the correlation between the journal impact factors and the usage data. In this study experiences of Ferdowsi University library on licensing and usage of electronic resources was evaluated by providing a cost-benefit analysis based on the cost and usage statistics of electronic resources. Vendor-provided data were also compared with local usage data. The usage data were collected by tracking web-based access locally, and by collecting vender-provided usage data. The data sources were one-year of vendor-supplied e-resource usage data such as Ebsco, Elsevier, Proquest, Emerald, Oxford and Springer and local usage data collected from the Ferdowsi university web server. The study found that actual usage values differ for vendor-provided data and local usage data. Elsevier has got the highest usage degree in searches, sessions and downloads. Statistics also showed that a small number of journals satisfy significant amount of use while the majority of journals were used less frequent and some were never used at all. The users preferred the PDF rather than HTML format. The data in subject profile suggested that the provided e-resources were best suited to certain subjects. There was no correlation between IF and electronic journal use. Monitoring the usage of e-resources gained increasing importance for acquisition policy and budget decisions. The article provided information about local metrics for the six surveyed vendors/publishers, e.g. usage trends, requests per package, cost per use as related to the scientific specialty of the university.

The strength of electron electron correlation in Cs3C60

Science.gov (United States)

Baldassarre, L.; Perucchi, A.; Mitrano, M.; Nicoletti, D.; Marini, C.; Pontiroli, D.; Mazzani, M.; Aramini, M.; Riccó, M.; Giovannetti, G.; Capone, M.; Lupi, S.

2015-10-01

Cs3C60 is an antiferromagnetic insulator that under pressure (P) becomes metallic and superconducting below Tc = 38 K. The superconducting dome present in the T - P phase diagram close to a magnetic state reminds what found in superconducting cuprates and pnictides, strongly suggesting that superconductivity is not of the conventional Bardeen-Cooper-Schrieffer (BCS) type We investigate the insulator to metal transition induced by pressure in Cs3C60 by means of infrared spectroscopy supplemented by Dynamical Mean-Field Theory calculations. The insulating compound is driven towards a metallic-like behaviour, while strong correlations survive in the investigated pressure range. The metallization process is accompanied by an enhancement of the Jahn-Teller effect. This shows that electronic correlations are crucial in determining the insulating behaviour at ambient pressure and the bad metallic nature for increasing pressure. On the other hand, the relevance of the Jahn-Teller coupling in the metallic state confirms that phonon coupling survives in the presence of strong correlations.

Process insulation. Isolation thermique des equipements

Energy Technology Data Exchange (ETDEWEB)

1987-01-01

A manual is presented to assist managers and operating personnel to recognize industrial energy management opportunities, and provides mathematical equations, general information on proven techniques and technology, and examples. It deals with process insulation, focusing on the insulation of mechanical systems such as piping, process vessels, equipment, and ductwork. The manual describes the effects of insulation materials; commonly encountered types of insulation, coverings and protective finishes as well as common applications; energy management opportunities, divided into housekeeping, low cost, and retrofit; and includes worked examples of each. Includes glossary. 17 figs., 8 tabs.

Concentration-elastic-stress instabilities in the distribution of ions and neutral particles in the insulator layer at the semiconductor surface

International Nuclear Information System (INIS)

Gol'dman, E. I.

2006-01-01

Mobile impurities in the form of ions and neutral associations are present in the insulator films that isolate the semiconductor from the metal electrode. If temperatures and the polarizing electric field are sufficiently high, impurities concentrate at the insulator-semiconductor interface where they exchange electrons with the semiconductor. It is shown that the pairwise interaction of particles via the field of elastic stresses caused by the concentration-related expansion of the insulator can give rise to an instability in the impurity distribution that is uniform over the contact. The stationary small-scale ordering of the particles over the contact of the insulator with the semiconductor arises in the solution of point defects, which is accompanied by annular flows of the particles

A crystalline cluster method for deep impurities in insulators

International Nuclear Information System (INIS)

Guimaraes, P.S.

1983-01-01

An 'ab initio' self-consistent-field crystalline-cluster approach to the study of deep impurity states in insulators is proposed. It is shown that, in spite of being a cluster calculation, the interaction of the impurity with the crystal environment is fully taken into account. It is also shown that the present representation of the impurity states is, at least, as precise as the crystalline cluster representation of the pure crystal electronic structure. The procedure has been tested by performing the calculation of the electronic structure of the U center in a sodium chloride crystal, and it has been observed that the calculated GAMMA 1 - GAMMA 15 absorption energy is in good agreement with experiment. (Author) [pt

A crystalline cluster method for deep impurities in insulators

International Nuclear Information System (INIS)

Guimaraes, P.S.

1983-01-01

An ''ab initio'' self-consistent-field crysttalline-cluster approach to the study of deep impurity states in insulators is proposed. It is shown that, in spite of being a cluster calculation, the interaction of the impurity with the crystal environment is fully taken into account. It is also shown that the present representation of the impurity states is, at least, as precise as the crystalline cluster representation of the pure crystal electronic structure. The procedure has been tested by performing the calculation of the electronic structure of the U center in a sodium chloride crystal, and it has been observed that the calculated γ 1 - γ 15 absorption energy is in good agreement with experiment. (author) [pt

Labeling and advertising of home insulation

Energy Technology Data Exchange (ETDEWEB)

1978-07-01

This staff report, prepared by the F.T.C.'s Bureau of Consumer Protection for Commission review, includes recommendations as to the final form of a trade regulation rule relating to the labeling and advertising of home insulation. Because of marketing abuses which accompanied the rising demand for home insulation, there has been broad support for a rule requiring information disclosures to help purchasers of home insulation to make an informed decision. The Commission, to provide such rule as quickly as possible, undertook its rulemaking proceeding under its new expedited rulemaking procedure. The rule was proposed on November 18, 1977, and, following a two-month period for written comments, four weeks of hearings were held in Washington, D.C. in February 1978. The record, contributed to by a variety of interests, shows that consumers do not know how to shop for home insulation. The staff-recommended rule, among other things, would require that insulation be tested and R-values (a measure of insulation's ability to retain heat) disclosed on labels and in advertising. To facilitate comparison shopping, the industry would also be required to furnish consumers with fact sheets describing, on a product-to-product basis, factors that can reduce the R-value of insulation.

Effect on the insulation material of a MOSFET device submitted to a standard diagnostic radiation beam

International Nuclear Information System (INIS)

De Magalhaes, C M S; Dos Santos, L A P; Souza, D do N; Maia, A F

2010-01-01

MOSFET electronic devices have been used for dosimetry in radiology and radiotherapy. Several communications show that due to the radiation exposure defects appear on the semiconductor crystal lattice. Actually, the structure of a MOSFET consists of three materials: a semiconductor, a metal and an insulator between them. The MOSFET is a quadripolar device with a common terminal: gate-source is the input; drain-source is the output. The gate controls the electrical current passing through semiconductor medium by the field effect because the silicon oxide acts as insulating material. The proposal of this work is to show some radiation effects on the insulator of a MOSFET device. A 6430 Keithley sub-femtoamp SourceMeter was used to verify how the insulating material layer in the structure of the device varies with the radiation exposure. We have used the IEC 61267 standard radiation X-ray beams generated from a Pantak industrial unit in the radiation energy range of computed tomography. This range was chosen because we are using the MOSFET device as radiation detector for dosimetry in computed tomography. The results showed that the behaviour of the electrical current of the device is different in the insulator and semiconductor structures.

Strength assessment of a cryostat used by the hollow electron test station.

CERN Document Server

Efremov, Filip

2015-01-01

The following report explains the work I have done on my summer student work project and the experience I have gained during the process. The work consisted of a strength assessment of a cryogenic vacuum insulated vessel according to European regulations. The cryogenic vacuum insulated vessel is used for the cooling of the solenoids. The solenoids are used in the hollow electron test station and create the magnetic fields used for testing electron guns and validating the concept of a hollow electron lens.

Attic Retrofits Using Nail-Base Insulated Panels

Energy Technology Data Exchange (ETDEWEB)

Mallay, David [Home Innovation Research Labs; Kochkin, Vladimir [Home Innovation Research Labs

2018-03-26

This project developed and demonstrated a roof/attic energy retrofit solution using nail-base insulated panels for existing homes where traditional attic insulation approaches are not effective or feasible. Nail-base insulated panels (retrofit panels) consist of rigid foam insulation laminated to one face of a wood structural panel. The prefabricated panels are installed above the existing roof deck during a reroofing effort.

High performance thermal insulation systems (HiPTI). Vacuum insulated products (VIP). Proceedings of the international conference and workshop

Energy Technology Data Exchange (ETDEWEB)

Zimmermann, M.; Bertschinger, H.

2001-07-01

These are the proceedings of the International Conference and Workshop held at EMPA Duebendorf, Switzerland, in January 2001. The papers presented at the conference's first day included contributions on the role of high-performance insulation in energy efficiency - providing an overview of available technologies and reviewing physical aspects of heat transfer and the development of thermal insulation as well as the state of the art of glazing technologies such as high-performance and vacuum glazing. Also, vacuum-insulated products (VIP) with fumed silica, applications of VIP systems in technical building systems, nanogels, VIP packaging materials and technologies, measurement of physical properties, VIP for advanced retrofit solutions for buildings and existing and future applications for advanced low energy building are discussed. Finally, research and development concerning VIP for buildings are reported on. The workshops held on the second day covered a preliminary study on high-performance thermal insulation materials with gastight porosity, flexible pipes with high performance thermal insulation, evaluation of modern insulation systems by simulation methods as well as the development of vacuum insulation panels with a stainless steel envelope.

Structural and electrical evaluation for strained Si/SiGe on insulator

International Nuclear Information System (INIS)

Wang Dong; Ii, Seiichiro; Ikeda, Ken-ichi; Nakashima, Hideharu; Ninomiya, Masaharu; Nakamae, Masahiko; Nakashima, Hiroshi

2006-01-01

Three strained Si/SiGe on insulator wafers having different Ge fractions were evaluated using dual-metal-oxide-semiconductor (dual-MOS) deep level transient spectroscopy (DLTS) and transmission electron microscopy (TEM) methods. The interface of SiGe/buried oxide (BOX) shows roughness less than 1 nm by high resolution TEM observation. The interface states densities (D it ) of SiGe/BOX are approximately 1 x 10 12 cm -2 eV -1 , which is approximately one order of magnitude higher than that of Si/BOX in a Si on insulator wafer measured as reference by the same method of dual-MOS DLTS. The high D it of SiGe/BOX is not due to interface roughness but due to Ge atoms. The threading dislocations were also clearly observed by TEM and were analyzed

Negative differential resistance in the Peierls insulating phases of TTF-TCNQ

Science.gov (United States)

Tonouchi, Daiki; Matsushita, Michio M.; Awaga, Kunio

2017-07-01

Negative differential resistance (NDR) was observed in the most well known organic conductor, TTF-TCNQ, in its low-temperature Peierls insulator phase below 53 K. The voltage-current (V -I ) characteristics below this temperature, measured by a four-probe method, exhibited unique NDR behavior, in which the d V /d I versus conductivity (σ) plots had the inflection points at the three σ values without depending on temperature. These σ values were found to coincide with the conductivities at the three transition temperatures (53, 49, and 38 K) for the formation of the charge-density waves in TTF-TCNQ. This suggests that the electronic structure of the Peierls insulating phase of TTF-TCNQ is governed by the total carrier density, which is determined by not only thermal excitation but also carrier injection.

The influence of preparation methodology on high voltage behaviour of alumina insulators in vacuum

CERN Document Server

Goddard, B; Tan, J

1998-01-01

The flashover characteristics of an insulator bridged high voltage vacuum gap can play an important role in the overall performance of a high voltage device, for example in the extreme environments of high energy particle accelerators. The detailed preparation of the insulators is, at present, governed by the commercial production methods and by standard bulk cleaning processes, which for a particular application may be far from optimum. The influence of particular cleaning technique have been investigated for commercially available alumina samples, with measurement of surface characteristics by scanning electron microscopy and laser diffraction and fields up to 200 kV/cm. The results of the different measurements are discussed in the overall context of the problems encountered in the full sized high voltage devices, and suggestions are made as to how the performance of alumina insulators could be improved by modification of the production and preparation specification.