Magnetically insulated transmission line oscillator

Science.gov (United States)

Bacon, L.D.; Ballard, W.P.; Clark, M.C.; Marder, B.M.

1987-05-19

A magnetically insulated transmission line oscillator employs self-generated magnetic fields to generate microwave energy. An anode of the oscillator includes slow-wave structures which are formed of a plurality of thin conductive vanes defining cavities therebetween, and a gap is formed between the anode and a cathode of the oscillator. In response to a pulsed voltage applied to the anode and cathode, self-generated magnetic fields are produced in a cross-field orientation with respect to the orientation of the electric field between the anode and the cathode. The cross-field magnetic fields insulate the flow of electrons in the gap and confine the flow of electrons within the gap. 11 figs.

Simulated electron affinity tuning in metal-insulator-metal (MIM) diodes

Science.gov (United States)

Mistry, Kissan; Yavuz, Mustafa; Musselman, Kevin P.

2017-05-01

Metal-insulator-metal diodes for rectification applications must exhibit high asymmetry, nonlinearity, and responsivity. Traditional methods of improving these figures of merit have consisted of increasing insulator thickness, adding multiple insulator layers, and utilizing a variety of metal contact combinations. However, these methods have come with the price of increasing the diode resistance and ultimately limiting the operating frequency to well below the terahertz regime. In this work, an Airy Function Transfer Matrix simulation method was used to observe the effect of tuning the electron affinity of the insulator as a technique to decrease the diode resistance. It was shown that a small increase in electron affinity can result in a resistance decrease in upwards of five orders of magnitude, corresponding to an increase in operating frequency on the same order. Electron affinity tuning has a minimal effect on the diode figures of merit, where asymmetry improves or remains unaffected and slight decreases in nonlinearity and responsivity are likely to be greatly outweighed by the improved operating frequency of the diode.

Spin current in an electron waveguide tunnel-coupled to a topological insulator

International Nuclear Information System (INIS)

Sukhanov, Aleksei A; Sablikov, Vladimir A

2012-01-01

We show that electron tunneling from edge states in a two-dimensional topological insulator into a parallel electron waveguide leads to the appearance of spin-polarized current in the waveguide. The spin polarization P can be very close to unity and the electron current passing through the tunnel contact splits in the waveguide into two branches flowing from the contact. The polarization essentially depends on the electron scattering by the contact and the electron-electron interaction in the one-dimensional edge states. The electron-electron interaction is treated within the Luttinger liquid model. The main effect of the interaction stems from the renormalization of the electron velocity, due to which the polarization increases with the interaction strength. Electron scattering by the contact leads to a decrease in P. A specific effect occurs when the bottom of the subbands in the waveguide crosses the Dirac point of the spectrum of edge states when changing the voltage or chemical potential. This leads to changing the direction of the spin current.

Optimization of electron beam crosslinking of wire and cable insulation

International Nuclear Information System (INIS)

Zimek, Zbigniew; Przybytniak, Grażyna; Nowicki, Andrzej

2012-01-01

The computer simulations based on Monte Carlo (MC) method and the ModeCEB software were carried out in connection with electron beam (EB) radiation set-up for crosslinking of electric wire and cable insulation. The theoretical predictions for absorbed dose distribution in irradiated electric insulation induced by scanned EB were compared to the experimental results of irradiation that was carried out in the experimental set-up based on ILU 6 electron accelerator with electron energy 0.5–2.0 MeV. The computer simulation of the dose distributions in two-sided irradiation system by a scanned electron beam in multilayer circular objects was performed for various process parameters, namely electric wire and cable geometry (thickness of insulation layers and copper wire diameter), type of polymer insulation, electron energy, energy spread and geometry of electron beam, electric wire and cable layout in irradiation zone. The geometry of electron beam distribution in the irradiation zone was measured using CTA and PVC foil dosimeters for available electron energy range. The temperature rise of the irradiated electric wire and irradiation homogeneity were evaluated for different experimental conditions to optimize technological process parameters. The results of computer simulation are consistent with the experimental data of dose distribution evaluated by gel-fraction measurements. Such conformity indicates that ModeCEB computer simulation is reliable and sufficient for optimization absorbed dose distribution in the multi-layer circular objects irradiated with scanned electron beams. - Highlights: ► We model wire and cables irradiation process by Monte Carlo simulations. ► We optimize irradiation configuration for various process parameters. ► Temperature rise and irradiation homogeneity were evaluated. ► Calculation (dose) and experimental (gel-fraction) results were compared. ► Computer simulation was found reliable and sufficient for process optimization.

Magnetically insulated transmission line used for relativistic electron beam injection into SPAC-VI

International Nuclear Information System (INIS)

Tsuzuki, Tetsuya; Narihara, Kazumichi; Tomita, Yukihiro; Mohri, Akihiro.

1980-10-01

For the purpose to inject the electron beam with energy of about 1.5 MeV and current of about 100 kA into the SPAC-6 (torus device), a magnetically insulated transmission line was designed and constructed. The motion of electrons in the line was theoretically analyzed. The requirements for the design of the transmission line were as follows-: (a) condition of magnetic insulation, (b) suppression against reverse gas flow from the beam source to the torus, (c) care to minimize the influence of strong torus magnetic field, (d) reduction of inductance and (e) safety engineering measures, e.g., separation valve in the MITL between the beam source and the SPAC-6. The transmission line of 2.4 m long was designed and constructed. The wave forms of electric potential and current were measured. The transmission efficiency of current along the axis and the efficiency as a function of current at the end of the line were also measured. The reason of the loss of current is discussed. (J.P.N.)

Numerical investigations for insulation particle transport phenomena in water flow

International Nuclear Information System (INIS)

Krepper, E.; Grahn, A.; Alt, S.; Kaestner, W.; Kratzsch, A.; Seeliger, A.

2005-01-01

The investigation of insulation debris generation, transport and sedimentation gains importance regarding the reactor safety research for PWR and BWR considering the long term behaviour of emergency core coolant systems during all types of LOCA. The insulation debris released near the break during LOCA consists of a mixture of very different particles concerning size, shape, consistence and other properties. Some fraction of the released insulation debris will be transported into the reactor sump where it may affect emergency core cooling. Open questions of generic interest are e.g. the sedimentation of the insulation debris in a water pool, possible re-suspension, transport in the sump water flow, particle load on strainers and corresponding difference pressure. A joint research project in cooperation with Institute of Process Technology, Process Automation and Measuring Technology (IPM) Zittau deals with the experimental investigation and the development of CFD models for the description of particle transport phenomena in coolant flow. While experiments are performed at the IPM-Zittau, theoretical work is concentrated at Forschungszentrum Rossendorf. In the present paper the basic concepts for CFD modelling are described and first results including feasibility studies are shown. During the ongoing work further results are expected. (author)

Effect of Flow Direction on the Extinction Limit for Flame Spread over Wire Insulation in Microgravity

DEFF Research Database (Denmark)

Nagachi, Masashi; Mitsui, Fumiya; Citerne, Jean-Marie

Experiments to determine the Limiting Oxygen Concentration (LOC) of a flame spread over electric wire insulation were carried out in microgravity provided by parabolic flights. The difference between the LOC in opposed and concurrent flows was evidenced. Polyethylene insulated Copper (Cu) wires...... and polyethylene insulated Nickel-Chrome (NiCr) wires with inner core diameter of 0.50 mm and insulation thickness of 0.30 mm were examined with external flow velocities ranging from 50mm/s to 200mm/s. The results for the Copper wires show that with increasing external flow velocity, the LOC monotonically...... decreased for the concurrent flow conditions and the LOC first decreased and then increased (“U” trend) for the opposed flow conditions. Similar trends were found in the experiments with NiCr wires. Also, in terms of the minimum LOC value, the minimum LOC was comparable for both wire types in both flow...

Voltage-driven magnetization control in topological insulator/magnetic insulator heterostructures

Directory of Open Access Journals (Sweden)

Michael E. Flatté

2017-05-01

Full Text Available A major barrier to the development of spin-based electronics is the transition from current-driven spin torque, or magnetic-field-driven magnetization reversal, to a more scalable voltage-driven magnetization reversal. To achieve this, multiferroic materials appear attractive, however the effects in current materials occur at very large voltages or at low temperatures. Here the potential of a new class of hybrid multiferroic materials is described, consisting of a topological insulator adjacent to a magnetic insulator, for which an applied electric field reorients the magnetization. As these materials lack conducting states at the chemical potential in their bulk, no dissipative charge currents flow in the bulk. Surface states at the interface, if present, produce effects similar to surface recombination currents in bipolar devices, but can be passivated using magnetic doping. Even without conducting states at the chemical potential, for a topological insulator there is a finite spin Hall conductivity provided by filled bands below the chemical potential. Spin accumulation at the interface with the magnetic insulator provides a torque on the magnetization. Properly timed voltage pulses can thus reorient the magnetic moment with only the flow of charge current required in the leads to establish the voltage. If the topological insulator is sufficiently thick the resulting low capacitance requires little charge current.

Topological insulator materials and nanostructures for future electronics, spintronics and energy conversion

International Nuclear Information System (INIS)

Kantser, Valeriu

2011-01-01

Two fundamental electrons attributes in materials and nanostructures - charge and spin - determine their electronic properties. The processing of information in conventional electronic devices is based only on the charge of the electrons. Spin electronics, or spintronics, uses the spin of electrons, as well as their charge, to process information. Metals, semiconductors and insulators are the basic materials that constitute the components of electronic devices, and these have been transforming all aspects of society for over a century. In contrast, magnetic metals, half-metals, magnetic semiconductors, dilute magnetic semiconductors and magnetic insulators are the materials that will form the basis for spintronic devices. Materials with topological band structure attributes and having a zero-energy band gap surface states are a special class of these materials that exhibit some fascinating and superior electronic properties compared to conventional materials allowing to combine both charge and spin functionalities. This article reviews a range of topological insulator materials and nanostructures with tunable surface states, focusing on nanolayered and nanowire like structures. These materials and nanostructures all have intriguing physical properties and numerous potential practical applications in spintronics, electronics, optics and sensors.

Formula for average energy required to produce a secondary electron in an insulator

International Nuclear Information System (INIS)

Xie Ai-Gen; Zhan Yu; Gao Zhi-Yong; Wu Hong-Yan

2013-01-01

Based on a simple classical model specifying that the primary electrons interact with the electrons of a lattice through the Coulomb force and a conclusion that the lattice scattering can be ignored, the formula for the average energy required to produce a secondary electron (in) is obtained. On the basis of the energy band of an insulator and the formula for in, the formula for the average energy required to produce a secondary electron in an insulator (in i ) is deduced as a function of the width of the forbidden band (E g ) and electron affinity χ. Experimental values and the in i values calculated with the formula are compared, and the results validate the theory that explains the relationships among E g , χ, and in i and suggest that the formula for in i is universal on the condition that the primary electrons at any energy hit the insulator. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

Influence of Wind Speed on Heat Flow through Polypropylene Insulating Material

Institute of Scientific and Technical Information of China (English)

SUN Yu-chai; CHENG Zhong-hao; FENG Xun-wei

2006-01-01

The heat transfer properties of polypropylene insulation at different ambient temperature against wind were analysed.A theoretical model of the combined conductive, convective and radiative heat flow through fibrous insulating material was presented. Detail study was carried out by using the finite element method. The theoretical results are in accordance to the experimental results which were accomplished in an artificial climate chamber.

Measurements of the Secondary Electron Emission of Some Insulators

CERN Document Server

Bozhko, Y.; Hilleret, N.

2013-01-01

Charging up the surface of an insulator after beam impact can lead either to reverse sign of field between the surface and collector of electrons for case of thick sample or appearance of very high internal field for thin films. Both situations discard correct measurements of secondary electron emission (SEE) and can be avoided via reducing the beam dose. The single pulse method with pulse duration of order of tens microseconds has been used. The beam pulsing was carried out by means of an analog switch introduced in deflection plate circuit which toggles its output between "beam on" and "beam off" voltages depending on level of a digital pulse. The error in measuring the beam current for insulators with high value of SEE was significantly reduced due to the use for this purpose a titanium sample having low value of the SEE with DC method applied. Results obtained for some not coated insulators show considerable increase of the SEE after baking out at 3500C what could be explained by the change of work functi...

Liquid metal flows in insulating elements of self-cooled blankets

International Nuclear Information System (INIS)

Molokov, S.

1995-01-01

Liquid metal flows in insulating rectangular ducts in strong magnetic fields are considered with reference to poloidal concepts of self-cooled blankets. Although the major part of the flow in poloidal blanket concepts is close to being fully developed, manifolds, expansions, contractions, elbows, etc., which are necessary elements in blanket designs, cause three-dimensional effects. The present investigation demonstrates the flow pattern in basic insulating geometries for actual and more advanced liquid metal blanket concepts and discusses the ways to avoid pressure losses caused by flow redistribution. Flows in several geometries, such as symmetric and non-symmetric 180 turns with and without manifolds, sharp and linear expansions with and without manifolds, etc., have been considered. They demonstrate the attractiveness of poloidal concepts of liquid metal blankets, since they guarantee uniform conditions for heat transfer. If changes in the duct cross-section occur in the plane perpendicular to the magnetic field (ideally a coolant should always flow in the radial-poloidal plane), the disturbances are local and the slug velocity profile is reached roughly at a distance equivalent to one duct width from the manifolds, expansions, etc. The effects of inertia in these flows are unimportant for the determination of the pressure drop and velocity profiles in the core of the flow but may favour heat transfer characteristics via instabilities and strongly anisotropic turbulence. (orig.)

Surface potential measurement of insulators in negative-ion implantation by secondary electron energy-peak shift

International Nuclear Information System (INIS)

Nagumo, Shoji; Toyota, Yoshitaka; Tsuji, Hiroshi; Gotoh, Yasuhito; Ishikawa, Junzo; Sakai, Shigeki; Tanjyo, Masayasu; Matsuda, Kohji.

1993-01-01

Negative-ion implantation is expected to realize charge-up free implantation. In this article, about a way to specify surface potential of negative-ion implanted insulator by secondary-electron-energy distribution, its principle and preliminary experimental results are described. By a measuring system with retarding field type energy analyzer, energy distribution of secondary electron from insulator of Fused Quartz in negative-carbon-ion implantation was measured. As a result the peak-shift of its energy distribution resulted according with the surface potential of insulator. It was found that surface potential of insulator is negatively charged by only several volts. Thus, negative-ion implanted insulator reduced its surface charge-up potential (without any electron supply). Therefore negative-ion implantation is considered to be much more effective method than conventional positive-ion implantation. (author)

Two-dimensional simulation research of secondary electron emission avalanche discharge on vacuum insulator surface

Science.gov (United States)

Cai, Libing; Wang, Jianguo; Zhu, Xiangqin; Wang, Yue; Zhang, Dianhui

2015-01-01

Based on the secondary electron emission avalanche (SEEA) model, the SEEA discharge on the vacuum insulator surface is simulated by using a 2D PIC-MCC code developed by ourselves. The evolutions of the number of discharge electrons, insulator surface charge, current, and 2D particle distribution are obtained. The effects of the strength of the applied electric field, secondary electron yield coefficient, rise time of the pulse, length of the insulator on the discharge are investigated. The results show that the number of the SEEA electrons presents a quadratic dependence upon the applied field strength. The SEEA current, which is on the order of Ampere, is directly proportional to the field strength and secondary electron yield coefficient. Finally, the electron-stimulated outgassing is included in the simulation code, and a three-phase discharge curve is presented by the simulation, which agrees with the experimental data.

Two-dimensional simulation research of secondary electron emission avalanche discharge on vacuum insulator surface

International Nuclear Information System (INIS)

Cai, Libing; Wang, Jianguo; Zhu, Xiangqin; Wang, Yue; Zhang, Dianhui

2015-01-01

Based on the secondary electron emission avalanche (SEEA) model, the SEEA discharge on the vacuum insulator surface is simulated by using a 2D PIC-MCC code developed by ourselves. The evolutions of the number of discharge electrons, insulator surface charge, current, and 2D particle distribution are obtained. The effects of the strength of the applied electric field, secondary electron yield coefficient, rise time of the pulse, length of the insulator on the discharge are investigated. The results show that the number of the SEEA electrons presents a quadratic dependence upon the applied field strength. The SEEA current, which is on the order of Ampere, is directly proportional to the field strength and secondary electron yield coefficient. Finally, the electron-stimulated outgassing is included in the simulation code, and a three-phase discharge curve is presented by the simulation, which agrees with the experimental data

Universal Quantum Criticality in the Metal-Insulator Transition of Two-Dimensional Interacting Dirac Electrons

Directory of Open Access Journals (Sweden)

Yuichi Otsuka

2016-03-01

Full Text Available The metal-insulator transition has been a subject of intense research since Mott first proposed that the metallic behavior of interacting electrons could turn to an insulating one as electron correlations increase. Here, we consider electrons with massless Dirac-like dispersion in two spatial dimensions, described by the Hubbard models on two geometrically different lattices, and perform numerically exact calculations on unprecedentedly large systems that, combined with a careful finite-size scaling analysis, allow us to explore the quantum critical behavior in the vicinity of the interaction-driven metal-insulator transition. Thereby, we find that the transition is continuous, and we determine the quantum criticality for the corresponding universality class, which is described in the continuous limit by the Gross-Neveu model, a model extensively studied in quantum field theory. Furthermore, we discuss a fluctuation-driven scenario for the metal-insulator transition in the interacting Dirac electrons: The metal-insulator transition is triggered only by the vanishing of the quasiparticle weight, not by the Dirac Fermi velocity, which instead remains finite near the transition. This important feature cannot be captured by a simple mean-field or Gutzwiller-type approximate picture but is rather consistent with the low-energy behavior of the Gross-Neveu model.

Simulation study of magnetically insulated power coupling to the applied-B ion diode

International Nuclear Information System (INIS)

Rosenthal, S.E.

1992-01-01

Power coupling to the applied-B ion diode from magnetically insulated transmission lines is simply described in terms of the voltage-current characteristics of both the diode and the transmission line. The accelerator load line intersects the composite characteristic at the operating voltage and current. Using 2-D PIC simulation, the authors have investigated how modification of either the ion diode or the magnetically insulated transmission line characteristic influences power coupling. Plasma prefill can modify the ion diode characteristic; a partially opened POS in the transmission line upstream of the ion diode is a possible cause of modification of the magnetically insulated transmission line characteristic. It can be useful to consider these two aspects of power coupling separately, but they are actually not independent. A good parameter to characterize the situation is the flow impedance, given by V/(I a 2 I c 2 ) 1/2 . V is the line voltage; I a and I c are the conduction currents flowing through the anode and cathode, respectively. The flow impedance covers a range from one half the vacuum impedance, for saturated magnetically insulated flow, to just below the vacuum impedance, for highly unsaturated flow. As the term ''flow impedance'' implies, low flow impedance coincides with greater electron flow while high flow impedance coincides with less electron flow. The flow impedance is sensitive to both the transmission line and the diode impedance. They show how the two are related, using the flow impedance as a parameter

The electronic structure and metal-insulator transitions in vanadium oxides

International Nuclear Information System (INIS)

Mossanek, Rodrigo Jose Ochekoski

2010-01-01

The electronic structure and metal-insulator transitions in vanadium oxides (SrVO_3, CaVO_3, LaVO_3 and YVO_3) are studied here. The purpose is to show a new interpretation to the spectra which is coherent with the changes across the metal-insulator transition. The main experimental techniques are the X-ray photoemission (PES) and X-ray absorption (XAS) spectroscopies. The spectra are interpreted with cluster model, band structure and atomic multiplet calculations. The presence of charge-transfer satellites in the core-level PES spectra showed that these vanadium oxides cannot be classified in the Mott-Hubbard regime. Further, the valence band and core-level spectra presented a similar behavior across the metal insulator transition. In fact, the structures in the spectra and their changes are determined by the different screening channels present in the metallic or insulating phases. The calculated spectral weight showed that the coherent fluctuations dominate the spectra at the Fermi level and give the metallic character to the SrVO_3 and CaVO_3 compounds. The vanishing of this charge fluctuation and the replacement by the Mott-Hubbard screening in the LaVO_3 and YVO_3 systems is ultimately responsible for the opening of a band gap and the insulating character. Further, the correlation effects are, indeed, important to the occupied electronic structure (coherent and incoherent peaks). On the other hand, the unoccupied electronic structure is dominated by exchange and crystal field effects (t2g and eg sub-bands of majority and minority spins). The optical conductivity spectrum was obtained by convoluting the removal and addition states. It showed that the oxygen states, as well as the crystal field and exchange effects are necessary to correctly compare and interpret the experimental results. Further, a correlation at the charge-transfer region of the core-level and valence band optical spectra was observed, which could be extended to other transition metal oxides

High pressure metallization of Mott Insulators: Magnetic, structural and electronic properties

International Nuclear Information System (INIS)

Pasternak, M.P.; Hearne, G.; Sterer, E.; Taylor, R.D.; Jeanloz, R.

1993-01-01

High pressure studies of the insulator-metal transition in the (TM)I 2 (TM = V, Fe, Co and Ni) compounds are described. Those divalent transition-metal iodides are structurally isomorphous and classified as Mott Insulators. Resistivity, X-ray diffraction and Moessbauer Spectroscopy were employed to investigate the electronic, structural, and magnetic properties as a function of pressure both on the highly correlated and on the metallic regimes

Electron-lattice energy relaxation in laser-excited thin-film Au-insulator heterostructures studied by ultrafast MeV electron diffraction.

Science.gov (United States)

Sokolowski-Tinten, K; Shen, X; Zheng, Q; Chase, T; Coffee, R; Jerman, M; Li, R K; Ligges, M; Makasyuk, I; Mo, M; Reid, A H; Rethfeld, B; Vecchione, T; Weathersby, S P; Dürr, H A; Wang, X J

2017-09-01

We apply time-resolved MeV electron diffraction to study the electron-lattice energy relaxation in thin film Au-insulator heterostructures. Through precise measurements of the transient Debye-Waller-factor, the mean-square atomic displacement is directly determined, which allows to quantitatively follow the temporal evolution of the lattice temperature after short pulse laser excitation. Data obtained over an extended range of laser fluences reveal an increased relaxation rate when the film thickness is reduced or the Au-film is capped with an additional insulator top-layer. This behavior is attributed to a cross-interfacial coupling of excited electrons in the Au film to phonons in the adjacent insulator layer(s). Analysis of the data using the two-temperature-model taking explicitly into account the additional energy loss at the interface(s) allows to deduce the relative strength of the two relaxation channels.

Optimization of electron beam crosslinking of wire and cable insulation

International Nuclear Information System (INIS)

Zimek, Z.; Przybytniak, G.; Nowicki, A.

2011-01-01

Complete text of publication follows. The computer simulations based on Monte Carlo method and the ModeCEB software program were carried out in connection with EB radiation set-up for crosslinking of electrical wire and cable insulation, located at the Center for Radiation Research and Technology of the Institute of Nuclear Chemistry and Technology. The theoretical predictions for absorbed dose distribution in irradiated electrical wire and cable insulation caused by scanned EB were compared to the experimental results of irradiation which were carried out in the experimental set-up based on ILU 6 electron accelerator, which is characterized by the following parameters: Electron energy 0.5-2.0 MeV; Average beam current 40-10 mA, pulse duration 400 μs; Width of scanning up to 80 cm; Scan frequency up to 50 Hz. The computer simulation of the dose distributions in two-sided irradiation system by a scanned electron beam in multilayer circular objects was performed for different process parameters; electrical wire and cable geometry (thickness of insulation layers and cupper wire diameter), type of polymer isolation, electron energy, energy spread, geometry of electron beam and electrical wire and cable distribution at irradiation zone. The geometry of electron beam distribution in irradiation zone was measured using TVA and PVC foil dosimeters for electron energy range available in ILU 6 accelerator. The temperature rise of irradiated electrical wire and irradiation homogeneity were evaluated for different experimental conditions to optimize process parameters. The obtained results of computer simulation were supported by experimental data of dose distribution based on gel-fraction measurements. Such agreement indicates that computer simulation ModeCEB is correct and sufficient for modelling of absorbed dose distribution in multi-layer circular objects irradiated with scanned electron beams. Acknowledgement: The R and D activities are supported by the European

Electron beam charging of insulators: A self-consistent flight-drift model

International Nuclear Information System (INIS)

Touzin, M.; Goeuriot, D.; Guerret-Piecourt, C.; Juve, D.; Treheux, D.; Fitting, H.-J.

2006-01-01

Electron beam irradiation and the self-consistent charge transport in bulk insulating samples are described by means of a new flight-drift model and an iterative computer simulation. Ballistic secondary electron and hole transport is followed by electron and hole drifts, their possible recombination and/or trapping in shallow and deep traps. The trap capture cross sections are the Poole-Frenkel-type temperature and field dependent. As a main result the spatial distributions of currents j(x,t), charges ρ(x,t), the field F(x,t), and the potential slope V(x,t) are obtained in a self-consistent procedure as well as the time-dependent secondary electron emission rate σ(t) and the surface potential V 0 (t). For bulk insulating samples the time-dependent distributions approach the final stationary state with j(x,t)=const=0 and σ=1. Especially for low electron beam energies E 0 G of a vacuum grid in front of the target surface. For high beam energies E 0 =10, 20, and 30 keV high negative surface potentials V 0 =-4, -14, and -24 kV are obtained, respectively. Besides open nonconductive samples also positive ion-covered samples and targets with a conducting and grounded layer (metal or carbon) on the surface have been considered as used in environmental scanning electron microscopy and common SEM in order to prevent charging. Indeed, the potential distributions V(x) are considerably small in magnitude and do not affect the incident electron beam neither by retarding field effects in front of the surface nor within the bulk insulating sample. Thus the spatial scattering and excitation distributions are almost not affected

Dynamic behavior of correlated electrons in the insulating doped semiconductor Si:P

Energy Technology Data Exchange (ETDEWEB)

Ritz, Elvira

2009-06-04

At low energy scales charge transport in the insulating Si:P is dominated by activated hopping between the localized donor electron states. Theoretical models for a disordered electronic system with a long-range Coulomb interaction are appropriate to interpret the electric conductivity spectra. With a novel and advanced method we perform broadband phase sensitive measurements of the reflection coefficient from 45 MHz up to 5 GHz, employing a vector network analyzer with a 2.4 mm coaxial sensor, which is terminated by the sample under test. While the material parameters (conductivity and permittivity) can be easily extracted from the obtained impedance data if the sample is metallic, no direct solution is possible if the material under investigation is an insulator. Focusing on doped semiconductors with largely varying conductivity and dielectric function, we present a closed calibration and evaluation procedure with an optimized theoretical and experimental complexity, based on the rigorous solution for the electromagnetic field inside the insulating sample, combined with the variational principle. Basically no limiting assumptions are necessary in a strictly defined parameter range. As an application of our new method, we have measured the complex broadband microwave conductivity of Si:P in a broad range of phosphorus concentration n/n{sub c} from 0.56 to 0.9 relative to the critical value n{sub c}=3.5 x 10{sup 18} cm{sup -3} of the metal-insulator transition driven by doping at temperatures down to 1.1 K, and studied unresolved issues of fundamental research concerning the electronic correlations and the metal-insulator transition. (orig.)

Electronic Structure Evolution across the Peierls Metal-Insulator Transition in a Correlated Ferromagnet

Directory of Open Access Journals (Sweden)

P. A. Bhobe

2015-10-01

Full Text Available Transition metal compounds often undergo spin-charge-orbital ordering due to strong electron-electron correlations. In contrast, low-dimensional materials can exhibit a Peierls transition arising from low-energy electron-phonon-coupling-induced structural instabilities. We study the electronic structure of the tunnel framework compound K_{2}Cr_{8}O_{16}, which exhibits a temperature-dependent (T-dependent paramagnetic-to-ferromagnetic-metal transition at T_{C}=180  K and transforms into a ferromagnetic insulator below T_{MI}=95  K. We observe clear T-dependent dynamic valence (charge fluctuations from above T_{C} to T_{MI}, which effectively get pinned to an average nominal valence of Cr^{+3.75} (Cr^{4+}∶Cr^{3+} states in a 3∶1 ratio in the ferromagnetic-insulating phase. High-resolution laser photoemission shows a T-dependent BCS-type energy gap, with 2G(0∼3.5(k_{B}T_{MI}∼35  meV. First-principles band-structure calculations, using the experimentally estimated on-site Coulomb energy of U∼4  eV, establish the necessity of strong correlations and finite structural distortions for driving the metal-insulator transition. In spite of the strong correlations, the nonintegral occupancy (2.25 d-electrons/Cr and the half-metallic ferromagnetism in the t_{2g} up-spin band favor a low-energy Peierls metal-insulator transition.

Analytical treatment of gas flows through multilayer insulation, project 1

Science.gov (United States)

Lin, J. T.

1972-01-01

A theoretical investigation of gas flow inside a multilayer insulation system was made for the case of the broadside pumping process. A set of simultaneous first-order differential equations for the temperature and pressure of the gas molecules through the perforations on the insulation layers. A modified Runge-Kutta method was used for numerical experiment. The numerical stability problem was also investigated. It was shown that when the relaxation time is less than the time period over which the gas properties change appreciably, the set of differential equations can be replaced by a set of algebraic equations for solution. Numerical examples were given and comparisons with experimental data were made.

Helium ion beam induced electron emission from insulating silicon nitride films under charging conditions

Science.gov (United States)

Petrov, Yu. V.; Anikeva, A. E.; Vyvenko, O. F.

2018-06-01

Secondary electron emission from thin silicon nitride films of different thicknesses on silicon excited by helium ions with energies from 15 to 35 keV was investigated in the helium ion microscope. Secondary electron yield measured with Everhart-Thornley detector decreased with the irradiation time because of the charging of insulating films tending to zero or reaching a non-zero value for relatively thick or thin films, respectively. The finiteness of secondary electron yield value, which was found to be proportional to electronic energy losses of the helium ion in silicon substrate, can be explained by the electron emission excited from the substrate by the helium ions. The method of measurement of secondary electron energy distribution from insulators was suggested, and secondary electron energy distribution from silicon nitride was obtained.

Surface potential measurement of the insulator with secondary electron caused by negative ion implantation

International Nuclear Information System (INIS)

Tsuji, Hiroshi; Toyota, Yoshitaka; Nagumo, Syoji; Gotoh, Yasuhito; Ishikawa, Junzo; Sakai, Shigeki; Tanjyo, Masayasu; Matsuda, Kohji.

1994-01-01

Ion implantation has the merit of the good controllability of implantation profile and low temperature process, and has been utilized for the impurity introduction in LSI production. However, positive ion implantation is carried out for insulator or insulated conductor substrates, their charged potential rises, which is a serious problem. As the requirement for them advanced, charge compensation method is not the effective means for resolving it. The negative ion implantation in which charging is little was proposed. When the experiment on the negative ion implantation into insulated conductors was carried out, it was verified that negative ion implantation is effective as the implantation process without charging. The method of determining the charged potential of insulators at the time of negative ion implantation by paying attention to the energy distribution of the secondary electrons emitted from substrates at the time was devised. The energy analyzer for measuring the energy distribution of secondary electrons was made, and the measurement of the charged potential of insulators was carried out. The principle of the measurement, the measuring system and the experimental results are reported. (K.I.)

Status of magnetically-insulated power transmission theory

Energy Technology Data Exchange (ETDEWEB)

Mendel, Jr, C W [Sandia Labs., Albuquerque, NM (United States)

1997-12-31

The theory of magnetically-insulated power flow has improved dramatically over the last two decades. Theoretical improvements included a complete general kinetic theory that involved distributions of electrons based on quasi-conserved canonical variables and was used to study flow stability and to analyze simulations and pulsers with voltage adders. The status of theory at this time allowed us to understand many features of these flows, but did not allow detailed analysis for design and data interpretation. Recent theoretical advances have drastically changed this situation. Two recent static models based on layered flows have allowed us to understand and to improve power coupling in voltage adders, current adders, plasma opening switches and in systems where the vacuum impedance varies along the flow. A dynamic model based upon electrons flowing in one or more thin layers has permitted detailed self-consistent time-dependent calculations which include electron flow. This model accurately predicts experimental and simulation data. (author). 3 figs.

Development of a high power electron beam welding gun with replaceable high voltage feed-through insulators

Energy Technology Data Exchange (ETDEWEB)

Saha, T.K; Mascarenhas, M.; Kandaswamy, E., E-mail: tanmay@barc.gov.in [Power Beam Equipment Design Section, Bhabha Atomic Research Centre, Mumbai (India)

2014-07-01

Ceramic to metal sealed feed-through insulators are commonly used in electron beam welding gun. The above feed-through insulators are susceptible to failure, as the brazing joints in them are not always very strong. Failure in one of these feed-through could render the complete gun unusable. This problem has already been faced in BARC, which led to the development of the electron gun with replaceable feed through insulators. A 24 kW Electron Beam Welding (EBW) gun with indigenous designed replaceable insulators is fabricated in BARC. Emphasis during the design of the gun had been to reduce the use of imported components to zero. This paper describes the design and fabrication of this gun and reports various simulations and tests performed. Beam trajectory of the gun is numerically computed and presented. Weld passes were carried out on stainless steel plates show satisfactory penetrations. (author)

Requirements for self-magnetically insulated transmission lines

Directory of Open Access Journals (Sweden)

J. Pace VanDevender

2015-03-01

Full Text Available Self-magnetically insulated transmission lines (MITLs connect pulsed-power drivers with a load. Although the technology was originally developed in the 1970s and is widely used today in super power generators, failure of the technology is the principal limitation on the power that can be delivered to an experiment. We address issues that are often overlooked, rejected after inadequate simulations, or covered by overly conservative assumptions: (i electron retrapping in coupling MITLs to loads, (ii the applicability of collisionless versus collisional electron flow, (iii power transport efficiency as a function of the geometry at the beginning of the MITL, (iv gap closure and when gap closure can be neglected, and (v the role of negative ions in causing anode plasmas and enhancing current losses. We suggest a practical set of conservative design requirements for self-magnetically insulated electron flow based on the results discussed in this paper and on previously published results. The requirements are not necessarily severe constraints in all MITL applications; however, each of the 18 suggested requirements should be examined in the design of a MITL and in the investigation of excessive losses.

Electron drag in ferromagnetic structures separated by an insulating interface

Science.gov (United States)

Kozub, V. I.; Muradov, M. I.; Galperin, Y. M.

2018-06-01

We consider electron drag in a system of two ferromagnetic layers separated by an insulating interface. The source of it is expected to be magnon-electron interactions. Namely, we assume that the external voltage is applied to the "active" layer stimulating electric current through this layer. In its turn, the scattering of the current-carrying electrons by magnons leads to a magnon drag current within this layer. The 3-magnons interactions between magnons in the two layers (being of non-local nature) lead to magnon drag within the "passive" layer which, correspondingly, produce electron drag current via processes of magnon-electron scattering. We estimate the drag current and compare it to the phonon-induced one.

Magnetic insulation of secondary electrons in plasma source ion implantation

International Nuclear Information System (INIS)

Rej, D.J.; Wood, B.P.; Faehl, R.J.; Fleischmann, H.H.

1993-01-01

The uncontrolled loss of accelerated secondary electrons in plasma source ion implantation (PSII) can significantly reduce system efficiency and poses a potential x-ray hazard. This loss might be reduced by a magnetic field applied near the workpiece. The concept of magnetically-insulated PSII is proposed, in which secondary electrons are trapped to form a virtual cathode layer near the workpiece surface where the local electric field is essentially eliminated. Subsequent electrons that are emitted can then be reabsorbed by the workpiece. Estimates of anomalous electron transport from microinstabilities are made. Insight into the process is gained with multi-dimensional particle-in-cell simulations

Electronic structure of ferromagnet-insulator interfaces: Fe/MgO and Co/MgO

Energy Technology Data Exchange (ETDEWEB)

Mueller, M.

2007-07-11

In this thesis the electronic structure of Fe/MgO{sub x} and Co/MgO{sub x} ferromagnet-insulator interfaces, representing material systems which are widely used in magnetic tunnel junctions, is studied by means of spin- and angle-resolved photoemission spectroscopy. The photoemission studies focus particularly on the response of the ferromagnetic electronic system in contact with MgO of varying stoichiometries, as this reflects the mechanisms of metal-oxide bonding at real ferromagnet-insulator interfaces. The correlation between chemical bonding and electronic structure formation is analyzed by combining information from core- and valence-band photoemission spectroscopy. The spectral features are compared to band structure calculations, which are performed using the SPR-KKR method. The Fe/MgO and Co/MgO systems are prepared by molecular beam epitaxy under ultrahigh vacuum conditions on well-defined (4 x 6) GaAs(001) substrates. A structural analysis by means of low-energy electron diffraction (LEED) reveals their body-centered cubic crystalline structure, whereas the chemical characterization by Auger electron spectroscopy is used to quantify the chemical environment at the sample surfaces. The magnetic analysis, using the magneto-optical Kerr effect, reveals the uniaxial anisotropy of the ferromagnetic layers. A crucial parameter is given by the MgO degree of oxidation, which is addressed by means of core-level spectroscopy and quantified by suitable fitting procedures of the Mg 2p core level. The results of the photoemission experiments show, that the electronic structure of the Fe/MgO and Co/MgO ferromagnet/insulator interfaces and, consequently, the interfacial spin polarization are sensitively controlled by the interface chemistry. In particular, three distinct scenarios are identified: the nearly stoichiometric, the oxygen-deficient and the over-oxidized ferromagnet/MgO interface. Each case is defined by innate characteristics of the electronic structure at

Coupling of an applied field magnetically insulated ion diode to a high power magnetically insulated transmission line system

International Nuclear Information System (INIS)

Maenchen, J.E.

1983-01-01

The coupling of energy from a high power pulsed accelerator through a long triplate magnetically insulated transmission line (MITL) in vacuum to an annular applied magnetic field insulated extraction ion diode is examined. The narrow power transport window and the wave front erosion of the MITL set stringent impedance history conditions on the diode load. A new ion diode design developed to satisfy these criteria with marginal electron insulation is presented. The LION accelerator is used to provide a positive polarity 1.5 MV, 350 kA, 40 ns FWHM pulse with a 30 kA/ns current rate from a triplate MITL source. A transition converts the triplate into a cylindrical cross section which flares into the ion diode load. Extensive current and voltage measurements performed along this structure and on the extracted ion beam provide conclusive evidence that the self insulation condition of the MITL is maintained in the transition by current loss alone. The ion diode utilizes a radial magnetic field between a grounded cathode annular emission tip and a disk anode. A 50 cm 2 dielectric/metal anode area serves as the ion plasma source subject to direct electron bombardment from the opposing cathode tip under marginal magnetic insulation conditions. The ions extracted cross the radial magnetic field and exit the diode volume as an annular cross section beam of peak current about 100 kA. The diode current gradually converts from the initial electron flow to nearly 100% ion current after 30 ns, coupling 60% of the diode energy into ions

Radial space-charge-limited electron flow in semi-insulating GaN:Fe

Czech Academy of Sciences Publication Activity Database

Mareš, Jiří J.; Hubík, Pavel; Krištofik, Jozef; Prušáková, Lucie; Uxa, Štěpán; Paskova, T.; Evans, K.

2011-01-01

Roč. 110, č. 1 (2011), 013723/1-013723/6 ISSN 0021-8979 R&D Projects: GA ČR GAP204/10/0212 Institutional research plan: CEZ:AV0Z10100521 Keywords : gallium nitride * semi-insulator * space-charge-limited current Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.168, year: 2011

Reduction of angular spread at nonadiabatic electron motion in magnetically insulated diode

Energy Technology Data Exchange (ETDEWEB)

Arzhannikov, A V; Sinitskij, S L [Institute of Nuclear Physics, Novosibirsk (Russian Federation)

1997-12-31

The behavior of the electron pitch-angle was investigated by analytical and numerical methods for the case of a magnetically insulated diode with a ribbon geometry. It is shown that at the boundary of the adiabaticity of the electron motion the angle can be multiply reduced by choice of a special inhomogeneity of the magnetic field. Analytic expressions for the final pitch-angle of the beam electrons are given. (author). 2 figs., 3 refs.

Electrohydrodynamic direct—writing of conductor—insulator-conductor multi-layer interconnection

International Nuclear Information System (INIS)

Zheng Gao-Feng; Pei Yan-Bo; Wang Xiang; Zheng Jian-Yi; Sun Dao-Heng

2014-01-01

A multi-layer interconnection structure is a basic component of electronic devices, and printing of the multi-layer interconnection structure is the key process in printed electronics. In this work, electrohydrodynamic direct-writing (EDW) is utilized to print the conductor—insulator—conductor multi-layer interconnection structure. Silver ink is chosen to print the conductor pattern, and a polyvinylpyrrolidone (PVP) solution is utilized to fabricate the insulator layer between the bottom and top conductor patterns. The influences of EDW process parameters on the line width of the printed conductor and insulator patterns are studied systematically. The obtained results show that the line width of the printed structure increases with the increase of the flow rate, but decreases with the increase of applied voltage and PVP content in the solution. The average resistivity values of the bottom and top silver conductor tracks are determined to be 1.34 × 10 −7 Ω·m and 1.39 × 10 −7 Ω·m, respectively. The printed PVP layer between the two conductor tracks is well insulated, which can meet the insulation requirement of the electronic devices. This study offers an alternative, fast, and cost-effective method of fabricating conductor—insulator—conductor multi-layer interconnections in the electronic industry

Synthesis of one-dimensional metal-containing insulated molecular wire with versatile properties directed toward molecular electronics materials.

Science.gov (United States)

Masai, Hiroshi; Terao, Jun; Seki, Shu; Nakashima, Shigeto; Kiguchi, Manabu; Okoshi, Kento; Fujihara, Tetsuaki; Tsuji, Yasushi

2014-02-05

We report, herein, the design, synthesis, and properties of new materials directed toward molecular electronics. A transition metal-containing insulated molecular wire was synthesized through the coordination polymerization of a Ru(II) porphyrin with an insulated bridging ligand of well-defined structure. The wire displayed not only high linearity and rigidity, but also high intramolecular charge mobility. Owing to the unique properties of the coordination bond, the interconversion between the monomer and polymer states was realized under a carbon monoxide atmosphere or UV irradiation. The results demonstrated a high potential of the metal-containing insulated molecular wire for applications in molecular electronics.

Limitation of the electron emission in an ion diode with magnetic self-insulation

International Nuclear Information System (INIS)

Pushkarev, A. I.; Isakova, Yu. I.; Guselnikov, V. I.

2011-01-01

The results of a study of the generation of a pulsed ion beam of gigawatt power formed by a diode with an explosive-emission potential electrode in a mode of magnetic self-insulation are presented. The studies were conducted at the TEMP-4M ion accelerator set in double pulse formation mode: the first pulse was negative (300-500 ns and 100-150 kV) and the second, positive (150 ns and 250-300 kV). The ion current density was 20-40 A/cm 2 ; the beam composition was protons and carbon ions. It was shown that plasma is effectively formed over the entire working surface of the graphite potential electrode. During the ion beam generation, a condition of magnetic cutoff of electrons along the entire length of the diode (B/B cr ≥ 4) is fulfilled. Because of the high drift rate, the residence time of the electrons and protons in the anode-cathode gap is 3-5 ns, while for the C + carbon ions, it is more than 8 ns. This denotes low efficiency of magnetic self-insulation in a diode of such a design. At the same time, it has been experimentally observed that, during the generation of ion current (second pulse), the electronic component of the total current is suppressed by a factor of 1.5-2 for a strip diode with plane and focusing geometry. A new model of the effect of limiting the electron emission explaining the decrease in the electronic component of the total current in a diode with magnetic self-insulation is proposed.

Electronic structure properties of UO2 as a Mott insulator

Science.gov (United States)

Sheykhi, Samira; Payami, Mahmoud

2018-06-01

In this work using the density functional theory (DFT), we have studied the structural, electronic and magnetic properties of uranium dioxide with antiferromagnetic 1k-, 2k-, and 3k-order structures. Ordinary approximations in DFT, such as the local density approximation (LDA) or generalized gradient approximation (GGA), usually predict incorrect metallic behaviors for this strongly correlated electron system. Using Hubbard term correction for f-electrons, LDA+U method, as well as using the screened Heyd-Scuseria-Ernzerhof (HSE) hybrid functional for the exchange-correlation (XC), we have obtained the correct ground-state behavior as an insulator, with band gaps in good agreement with experiment.

Cellulose Insulation

Science.gov (United States)

1980-01-01

Fire retardant cellulose insulation is produced by shredding old newspapers and treating them with a combination of chemicals. Insulating material is blown into walls and attics to form a fiber layer which blocks the flow of air. All-Weather Insulation's founders asked NASA/UK-TAP to help. They wanted to know what chemicals added to newspaper would produce an insulating material capable of meeting federal specifications. TAP researched the query and furnished extensive information. The information contributed to successful development of the product and helped launch a small business enterprise which is now growing rapidly.

Topological insulators/superconductors: Potential future electronic materials

International Nuclear Information System (INIS)

Hor, Y. S.

2014-01-01

A new material called topological insulator has been discovered and becomes one of the fastest growing field in condensed matter physics. Topological insulator is a new quantum phase of matter which has Dirac-like conductivity on its surface, but bulk insulator through its interior. It is considered a challenging problem for the surface transport measurements because of dominant internal conductance due to imperfections of the existing crystals of topological insulators. By a proper method, the internal bulk conduction can be suppressed in a topological insulator, and permit the detection of the surface currents which is necessary for future fault-tolerant quantum computing applications. Doped topological insulators have depicted a large variety of bulk physical properties ranging from magnetic to superconducting behaviors. By chemical doping, a TI can change into a bulk superconductor. Nb x Bi 2 Se 3 is shown to be a superconductor with T c ∼ 3.2 K, which could be a potential candidate for a topological superconductor

Monolayer graphene-insulator-semiconductor emitter for large-area electron lithography

Science.gov (United States)

Kirley, Matthew P.; Aloui, Tanouir; Glass, Jeffrey T.

2017-06-01

The rapid adoption of nanotechnology in fields as varied as semiconductors, energy, and medicine requires the continual improvement of nanopatterning tools. Lithography is central to this evolving nanotechnology landscape, but current production systems are subject to high costs, low throughput, or low resolution. Herein, we present a solution to these problems with the use of monolayer graphene in a graphene-insulator-semiconductor (GIS) electron emitter device for large-area electron lithography. Our GIS device displayed high emission efficiency (up to 13%) and transferred large patterns (500 × 500 μm) with high fidelity (industries and opening opportunities in nanomanufacturing.

Impedance of an annular-cathode indented-anode electron diode terminating a coaxial magnetically insulated transmission line

International Nuclear Information System (INIS)

Sanford, T.W.L.; Poukey, J.W.; Wright, T.P.; Bailey, J.; Heath, C.E.; Mock, R.; Spence, P.W.; Fockler, J.; Kishi, H.

1988-01-01

The impedance of a diode having an annular cathode and indented anode that terminates a coaxial MITL (magnetically insulated transmission line) is measured and compared with a semiempirical model developed from calculations made using the magIc code. The measurements were made on the 16-Ω electron accelerator HELIA (high-energy linear induction accelerator) operating at 3 MV. The model agrees with the measurements within the 10% measuring error and shows that the diode operates in either a load- or line-dominated regime depending on AK (anode-cathode) gap spacing. In the load-dominated regime, which corresponds to small AK gaps, the diode impedance is controlled by an effective anode-cathode gap, and the flow is approximately axial. In the line-dominated regime, which corresponds to large AK gaps, the impedance is independent of the AK gap and corresponds to the impedance associated with the minimum current solution of the MITL, with the flow becoming more radial as the AK gap is increased

Device intended for measurement of induced trapped charge in insulating materials under electron irradiation in a scanning electron microscope

International Nuclear Information System (INIS)

Belkorissat, R; Benramdane, N; Jbara, O; Rondot, S; Hadjadj, A; Belhaj, M

2013-01-01

A device for simultaneously measuring two currents (i.e. leakage and displacement currents) induced in insulating materials under electron irradiation has been built. The device, suitably mounted on the sample holder of a scanning electron microscope (SEM), allows a wider investigation of charging and discharging phenomena that take place in any type of insulator during its electron irradiation and to determine accurately the corresponding time constants. The measurement of displacement current is based on the principle of the image charge due to the electrostatic influence phenomena. We are reporting the basic concept and test results of the device that we have built using, among others, the finite element method for its calibration. This last method takes into account the specimen chamber geometry, the geometry of the device and the physical properties of the sample. In order to show the possibilities of the designed device, various applications under different experimental conditions are explored. (paper)

Metallic Interface Emerging at Magnetic Domain Wall of Antiferromagnetic Insulator: Fate of Extinct Weyl Electrons

Directory of Open Access Journals (Sweden)

Youhei Yamaji

2014-05-01

Full Text Available Topological insulators, in contrast to ordinary semiconductors, accompany protected metallic surfaces described by Dirac-type fermions. Here, we theoretically show that another emergent two-dimensional metal embedded in the bulk insulator is realized at a magnetic domain wall. The domain wall has long been studied as an ingredient of both old-fashioned and leading-edge spintronics. The domain wall here, as an interface of seemingly trivial antiferromagnetic insulators, emergently realizes a functional interface preserved by zero modes with robust two-dimensional Fermi surfaces, where pyrochlore iridium oxides proposed to host the condensed-matter realization of Weyl fermions offer such examples at low temperatures. The existence of in-gap states that are pinned at domain walls, theoretically resembling spin or charge solitons in polyacetylene, and protected as the edges of hidden one-dimensional weak Chern insulators characterized by a zero-dimensional class-A topological invariant, solves experimental puzzles observed in R_{2}Ir_{2}O_{7} with rare-earth elements R. The domain wall realizes a novel quantum confinement of electrons and embosses a net uniform magnetization that enables magnetic control of electronic interface transports beyond the semiconductor paradigm.

Spin-polarized currents in the tunnel contact of a normal conductor and a two-dimensional topological insulator

International Nuclear Information System (INIS)

Sukhanov, A. A.; Sablikov, V. A.

2013-01-01

The spin filtering of electrons tunneling from the edge states of a two-dimensional topological insulator into a normal conductor under a magnetic field (external or induced due to proximity to a magnetic insulator) is studied. Calculations are performed for a tunnel contact of finite length between the topological insulator and an electronic multimode quantum strip. It is shown that the flow of tunneling electrons is split in the strip, so that spin-polarized currents arise in its left and right branches. These currents can be effectively controlled by the contact voltage and the chemical potential of the system. The presence of a magnetic field, which splits the spin subbands of the electron spectrum in the strip, gives rise to switching of the spin current between the strip branches

A method to restrain the charging effect on an insulating substrate in high energy electron beam lithography

Science.gov (United States)

Mingyan, Yu; Shirui, Zhao; Yupeng, Jing; Yunbo, Shi; Baoqin, Chen

2014-12-01

Pattern distortions caused by the charging effect should be reduced while using the electron beam lithography process on an insulating substrate. We have developed a novel process by using the SX AR-PC 5000/90.1 solution as a spin-coated conductive layer, to help to fabricate nanoscale patterns of poly-methyl-methacrylate polymer resist on glass for phased array device application. This method can restrain the influence of the charging effect on the insulating substrate effectively. Experimental results show that the novel process can solve the problems of the distortion of resist patterns and electron beam main field stitching error, thus ensuring the accuracy of the stitching and overlay of the electron beam lithography system. The main characteristic of the novel process is that it is compatible to the multi-layer semiconductor process inside a clean room, and is a green process, quite simple, fast, and low cost. It can also provide a broad scope in the device development on insulating the substrate, such as high density biochips, flexible electronics and liquid crystal display screens.

Absorbed Dose Distributions in Small Copper Wire Insulation due to Multiple-Sided Irradiations by 0.4 MeV Electrons

DEFF Research Database (Denmark)

Miller, Arne; McLaughlin, W. L.; Pedersen, Walther Batsberg

1979-01-01

When scanned electron beams are used to crosslink polymeric insulation of wire and cable, an important goal is to achieve optimum uniformity of absorbed dose distributions. Accurate measurements of dose distributions in a plastic dosimeter simulating a typical insulating material (polyethylene......) surrounding a copper wire core show that equal irradiations from as few as four sides give approximately isotropy and satisfactorily uniform energy depositions around the wire circumference. Electron beams of 0.4 MeV maximum energy were used to irradiate wires having a copper core of 1.0 mm dia....... and insulation thicknesses between 0.4 and 0.8 mm. The plastic dosimeter simulating polyethylene insulations was a thin radiochromic polyvinyl butyral film wrapped several times around the copper wire, such that when unwrapped and analyzed optically on a scanning microspectrophotometer, high-resolution radial...

Investigation of the thermal resistance of timber attic spaces with reflective foil and bulk insulation, heat flow up

Energy Technology Data Exchange (ETDEWEB)

Belusko, M.; Bruno, F.; Saman, W. [Institute for Sustainable Systems and Technologies, University of South Australia, Mawson Lakes Boulevard, SA 5095 (Australia)

2011-01-15

An experimental investigation was undertaken in which the thermal resistance for the heat flow through a typical timber framed pitched roofing system was measured under outdoor conditions for heat flow up. The measured thermal resistance of low resistance systems such as an uninsulated attic space and a reflective attic space compared well with published data. However, with higher thermal resistance systems containing bulk insulation within the timber frame, the measured result for a typical installation was as low as 50% of the thermal resistance determined considering two dimensional thermal bridging using the parallel path method. This result was attributed to three dimensional heat flow and insulation installation defects, resulting from the design and construction method used. Translating these results to a typical house with a 200 m{sup 2} floor area, the overall thermal resistance of the roof was at least 23% lower than the overall calculated thermal resistance including two dimensional thermal bridging. When a continuous layer of bulk insulation was applied to the roofing system, the measured values were in agreement with calculated resistances representing a more reliable solution. (author)

Electronic structure and transport on the surface of topological insulator attached to an electromagnetic superlattice

International Nuclear Information System (INIS)

Wang Haiyan; Chen Xiongwen; Zhou Xiaoying; Zhang Lebo; Zhou Guanghui

2012-01-01

We study the electronic structure and transport for Dirac electron on the surface of a three-dimensional (3D) topological insulator attached to an electromagnetic superlattice. It is found that, by means of the transfer-matrix method, the number of electronic tunneling channels for magnetic barriers in antiparallel alignment is larger than that in parallel alignment, which stems to the energy band structures. Interestingly, a remarkable semiconducting transport behavior appears in this system with a strong magnetic barrier due to low energy band nearly paralleling to the Fermi level. Consequently, there is only small incident angle transport in the higher energy region when the system is modulated mainly by the higher electric barriers. We further find that the spatial distribution of the spin polarization oscillates periodically in the incoming region, but it is almost in-plane with a fixed direction in the transmitting region. The results may provide a further understanding of the nature of 3D TI surface states, and may be useful in the design of topological insulator-based electronic devices such as collimating electron beam.

Charging of insulators by multiply-charged-ion impact probed by slowing down of fast binary-encounter electrons

Science.gov (United States)

de Filippo, E.; Lanzanó, G.; Amorini, F.; Cardella, G.; Geraci, E.; Grassi, L.; La Guidara, E.; Lombardo, I.; Politi, G.; Rizzo, F.; Russotto, P.; Volant, C.; Hagmann, S.; Rothard, H.

2010-12-01

The interaction of ion beams with insulators leads to charging-up phenomena, which at present are under investigation in connection with guiding phenomena in nanocapillaries with possible application in nanofocused beams. We studied the charging dynamics of insulating foil targets [Mylar, polypropylene (PP)] irradiated with swift ion beams (C, O, Ag, and Xe at 40, 23, 40, and 30 MeV/u, respectively) via the measurement of the slowing down of fast binary-encounter electrons. Also, sandwich targets (Mylar covered with a thin Au layer on both surfaces) and Mylar with Au on only one surface were used. Fast-electron spectra were measured by the time-of-flight method at the superconducting cyclotron of Laboratori Nazionali del Sud (LNS) Catania. The charge buildup leads to target-material-dependent potentials of the order of 6.0 kV for Mylar and 2.8 kV for PP. The sandwich targets, surprisingly, show the same behavior as the insulating targets, whereas a single Au layer on the electron and ion exit side strongly suppresses the charging phenomenon. The accumulated number of projectiles needed for charging up is inversely proportional to electronic energy loss. Thus, the charging up is directly related to emission of secondary electrons.

Charging of insulators by multiply-charged-ion impact probed by slowing down of fast binary-encounter electrons

International Nuclear Information System (INIS)

De Filippo, E.; Lanzano, G.; Cardella, G.; Amorini, F.; Geraci, E.; Grassi, L.; Politi, G.; La Guidara, E.; Lombardo, I.; Rizzo, F.; Russotto, P.; Volant, C.; Hagmann, S.; Rothard, H.

2010-01-01

The interaction of ion beams with insulators leads to charging-up phenomena, which at present are under investigation in connection with guiding phenomena in nanocapillaries with possible application in nanofocused beams. We studied the charging dynamics of insulating foil targets [Mylar, polypropylene (PP)] irradiated with swift ion beams (C, O, Ag, and Xe at 40, 23, 40, and 30 MeV/u, respectively) via the measurement of the slowing down of fast binary-encounter electrons. Also, sandwich targets (Mylar covered with a thin Au layer on both surfaces) and Mylar with Au on only one surface were used. Fast-electron spectra were measured by the time-of-flight method at the superconducting cyclotron of Laboratori Nazionali del Sud (LNS) Catania. The charge buildup leads to target-material-dependent potentials of the order of 6.0 kV for Mylar and 2.8 kV for PP. The sandwich targets, surprisingly, show the same behavior as the insulating targets, whereas a single Au layer on the electron and ion exit side strongly suppresses the charging phenomenon. The accumulated number of projectiles needed for charging up is inversely proportional to electronic energy loss. Thus, the charging up is directly related to emission of secondary electrons.

Study of surface and bulk instabilities in MHD duct flow with imitation of insulator coating imperfections

Energy Technology Data Exchange (ETDEWEB)

Xu Zengyu [Southwestern Institute of Physics, P.O. Box 432, Chengdu, Sichuan 610041 (China)]. E-mail: xuzy@swip.ac.cn; Pan Chuanjie [Southwestern Institute of Physics, P.O. Box 432, Chengdu, Sichuan 610041 (China); Wei Wenhao [Southwestern Institute of Physics, P.O. Box 432, Chengdu, Sichuan 610041 (China); Kang Weishan [Southwestern Institute of Physics, P.O. Box 432, Chengdu, Sichuan 610041 (China)

2006-02-15

MHD phenomena in a duct flow were studied experimentally by using copper electrodes inserted into the wall of a perfectly insulated duct. The electrodes were connected using a copper wire to imitate different insulator coating imperfection conditions. The experimental results show instabilities of electric potential at the wall (surface instabilities) as well as instabilities in the pressure and velocity (bulk instabilities). The instabilities are strongly dependent on the scale of the copper wire. Three different cases were studied (at the same flow regimes, but with different electrode connections), where the potential at the duct wall is smaller, equal to or higher than the product of duct diameter 2a and transverse magnetic field B and average velocity V . MHD pressure drop {delta}P also exhibits significant changes.

Ion diode performance on a positive polarity inductive voltage adder with layered magnetically insulated transmission line flow

International Nuclear Information System (INIS)

Hinshelwood, D. D.; Schumer, J. W.; Allen, R. J.; Commisso, R. J.; Jackson, S. L.; Murphy, D. P.; Phipps, D.; Swanekamp, S. B.; Weber, B. V.; Ottinger, P. F.; Apruzese, J. P.; Cooperstein, G.; Young, F. C.

2011-01-01

A pinch-reflex ion diode is fielded on the pulsed-power machine Mercury (R. J. Allen, et al., 15th IEEE Intl. Pulsed Power Conf., Monterey, CA, 2005, p. 339), which has an inductive voltage adder (IVA) architecture and a magnetically insulated transmission line (MITL). Mercury is operated in positive polarity resulting in layered MITL flow as emitted electrons are born at a different potential in each of the adder cavities. The usual method for estimating the voltage by measuring the bound current in the cathode and anode of the MITL is not accurate with layered flow, and the interaction of the MITL flow with a pinched-beam ion diode load has not been studied previously. Other methods for determining the diode voltage are applied, ion diode performance is experimentally characterized and evaluated, and circuit and particle-in-cell (PIC) simulations are performed. Results indicate that the ion diode couples efficiently to the machine operating at a diode voltage of about 3.5 MV and a total current of about 325 kA, with an ion current of about 70 kA of which about 60 kA is proton current. It is also found that the layered flow impedance of the MITL is about half the vacuum impedance.

Synthesis of ultrathin polymer insulating layers by initiated chemical vapour deposition for low-power soft electronics.

Science.gov (United States)

Moon, Hanul; Seong, Hyejeong; Shin, Woo Cheol; Park, Won-Tae; Kim, Mincheol; Lee, Seungwon; Bong, Jae Hoon; Noh, Yong-Young; Cho, Byung Jin; Yoo, Seunghyup; Im, Sung Gap

2015-06-01

Insulating layers based on oxides and nitrides provide high capacitance, low leakage, high breakdown field and resistance to electrical stresses when used in electronic devices based on rigid substrates. However, their typically high process temperatures and brittleness make it difficult to achieve similar performance in flexible or organic electronics. Here, we show that poly(1,3,5-trimethyl-1,3,5-trivinyl cyclotrisiloxane) (pV3D3) prepared via a one-step, solvent-free technique called initiated chemical vapour deposition (iCVD) is a versatile polymeric insulating layer that meets a wide range of requirements for next-generation electronic devices. Highly uniform and pure ultrathin films of pV3D3 with excellent insulating properties, a large energy gap (>8 eV), tunnelling-limited leakage characteristics and resistance to a tensile strain of up to 4% are demonstrated. The low process temperature, surface-growth character, and solvent-free nature of the iCVD process enable pV3D3 to be grown conformally on plastic substrates to yield flexible field-effect transistors as well as on a variety of channel layers, including organics, oxides, and graphene.

Design and performance of the Z magnetically-insulated transmission lines

International Nuclear Information System (INIS)

Stygar, W.A.; Spielman, R.B.; Allshouse, G.O.

1997-01-01

The 36-module Z accelerator was designed to drive z-pinch loads for weapon-physics and inertial-confinement-fusion experiments, and to serve as a testing facility for pulsed-power research required to develop higher-current drivers. The authors have designed and tested a 10-nH 1.5-m-radius vacuum section for the Z accelerator. The vacuum section consists of four vacuum flares, four conical 1.3-m-radius magnetically-insulated transmission lines, a 7.6-cm-radius 12-post double-post-hole convolute which connects the four outer MITLs in parallel, and a 5-cm-long inner MITL which connects the output of the convolute to a z-pinch load. IVORY and ELECTRO calculations were performed to minimize the inductance of the vacuum flares with the constraint that there be no significant electron emission from the insulator-stack grading rings. Iterative TLCODE calculations were performed to minimize the inductance of the outer MITLs with the constraint that the MITL electron-flow-current fraction be ≤ 7% at peak current. The TLCODE simulations assume a 2.5 cm/micros MITL-cathode-plasma expansion velocity. The design limits the electron dose to the outer-MITL anodes to 50 J/g to prevent the formation of an anode plasma. The TLCODE results were confirmed by SCREAMER, TRIFL, TWOQUICK, IVORY, and LASNEX simulations. For the TLCODE, SCREAMER, and TRIFL calculations, the authors assume that after magnetic insulation is established, the electron-flow current launched in the outer MITLs is lost at the convolute. This assumption has been validated by 3-D QUICKSILVER simulations for load impedances ≤ 0.36 ohms. LASNEX calculations suggest that ohmic resistance of the pinch and conduction-current-induced energy loss to the MITL electrodes can be neglected in Z power-flow modeling that is accurate to first order. To date, the Z vacuum section has been tested on 100 shots. They have demonstrated they can deliver a 100-ns rise-time 20-MA current pulse to the baseline z-pinch load

Size-dependent single electron transfer and semi-metal-to-insulator transitions in molecular metal oxide electronics

Science.gov (United States)

Balliou, Angelika; Bouroushian, Mirtat; Douvas, Antonios M.; Skoulatakis, George; Kennou, Stella; Glezos, Nikos

2018-07-01

All-inorganic self-arranged molecular transition metal oxide hyperstructures based on polyoxometalate molecules (POMs) are fabricated and tested as electronically tunable components in emerging electronic devices. POM hyperstructures reveal great potential as charging nodes of tunable charging level for molecular memories and as enhancers of interfacial electron/hole injection for photovoltaic stacks. STM, UPS, UV–vis spectroscopy and AFM measurements show that this functionality stems from the films’ ability to structurally tune their HOMO–LUMO levels and electron localization length at room temperature. By adapting POM nanocluster size in solution, self-doping and current modulation of four orders of magnitude is monitored on a single nanocluster on SiO2 at voltages as low as 3 Volt. Structurally driven insulator-to-semi-metal transitions and size-dependent current regulation through single electron tunneling are demonstrated and examined with respect to the stereochemical and electronic structure of the molecular entities. This extends the value of self-assembly as a tool for correlation length and electronic properties tuning and demonstrate POM hyperstructures’ plausibility for on-chip molecular electronics operative at room temperature.

Size-dependent single electron transfer and semi-metal-to-insulator transitions in molecular metal oxide electronics.

Science.gov (United States)

Balliou, Angelika; Bouroushian, Mirtat; Douvas, Antonios M; Skoulatakis, George; Kennou, Stella; Glezos, Nikos

2018-07-06

All-inorganic self-arranged molecular transition metal oxide hyperstructures based on polyoxometalate molecules (POMs) are fabricated and tested as electronically tunable components in emerging electronic devices. POM hyperstructures reveal great potential as charging nodes of tunable charging level for molecular memories and as enhancers of interfacial electron/hole injection for photovoltaic stacks. STM, UPS, UV-vis spectroscopy and AFM measurements show that this functionality stems from the films' ability to structurally tune their HOMO-LUMO levels and electron localization length at room temperature. By adapting POM nanocluster size in solution, self-doping and current modulation of four orders of magnitude is monitored on a single nanocluster on SiO 2 at voltages as low as 3 Volt. Structurally driven insulator-to-semi-metal transitions and size-dependent current regulation through single electron tunneling are demonstrated and examined with respect to the stereochemical and electronic structure of the molecular entities. This extends the value of self-assembly as a tool for correlation length and electronic properties tuning and demonstrate POM hyperstructures' plausibility for on-chip molecular electronics operative at room temperature.

Local structural distortion and electronic modifications in PrNiO3 across the metal-insulator transition

International Nuclear Information System (INIS)

Piamonteze, C.; Tolentino, H.C.N.; Ramos, A.Y.; Massa, N. E.; Alonso, J.A.; Martinez-Lope, M.J.; Casais, M.T.

2003-01-01

Local electronic and structural properties of PrNiO3 perovskite were studied by means of X-ray Absorption Spectroscopy at Ni K and L edges. The EXAFS results at Ni K edge show a structural transition from three different Ni-O bond-lengths at the insulating phase to two Ni-O bond-lengths above TMI. These results were interpreted as being due to a transition from a structure with two different Ni sites at the insulating phase to one distorted Ni site at the metallic phase. The Ni L edge spectra show a remarkable difference between the spectra measured at the insulating and metallic phases that indicates a decreasing degree of hybridization between Ni3d and O2p bands from the metallic to the insulating phase

An experimental study on the two-phase natural circulation flow through the gap between reactor vessel and insulation under ERVC

Energy Technology Data Exchange (ETDEWEB)

Ha, Kwang-Soon; Park, Rae-Joon; Cho, Young-Ro; Kim, Sang-Baik; Kim, Hwan-Yeol; Kim, Hee-dong

2005-04-01

As part of a study on a two-phase natural circulation flow between the outer reactor vessel and the insulation material in the reactor cavity under an external reactor vessel cooling of APR1400, T-HERMES-SMALL and HERMES-HALF experiments have been performed. For the T-HERMES-SMALL experiments, an 1/21.6 scaled experimental facility was prepared utilizing the results of a scaling analysis to simulate the APR1400 reactor and insulation system. The liquid mass flow rates driven by natural circulation loop were measured by varying the wall heat flux, upper outlet area and configuration, and water head condition. The experimental data were also compared with numerical ones given by simple loop analysis. And non-heating small-scaled experiments have also been performed to certify the hydraulic similarity of the heating experiments by injecting air equivalent to the steam generated in the heating experimental condition. The HERMES-HALF experiment is a half-scaled / non-heating experimental study on the two-phase natural circulation through the annular gap between the reactor vessel and the insulation. The behaviors of the two-phase natural circulation flow in the insulation gap were observed, and the liquid mass flow rates driven by natural circulation loop were measured by varying the air injection rate, the coolant inlet area and configuration, and the outlet area and also the water head condition of coolant reservoir. From the experimental flow observation, the recirculation flows in the near region of the shear key were identified. At a higher air injection rate condition, higher recirculation flows and choking phenomenon in the near region of the shear key were observed. As the water inlet areas increased, the natural circulation mass flow rates asymptotically increased, that is, they converged at a specific value. And the experimental correlations for the natural circulation mass flow rates along with a variation of the inlet / outlet area and wall heat flux were

Influence of oxygen flow rate on metal-insulator transition of vanadium oxide thin films grown by RF magnetron sputtering

Energy Technology Data Exchange (ETDEWEB)

Ma, Xu; Liu, Xinkun; Li, Haizhu; Huang, Mingju [Henan University, Key Lab of Informational Opto-Electronical Materials and Apparatus, School of Physics and Electronics, Kaifeng (China); Zhang, Angran [South China Normal University, Institute of Electronic Paper Displays, South China Academy of Advanced Optoelectronics, Guangzhou (China)

2017-03-15

High-quality vanadium oxide (VO{sub 2}) films have been fabricated on Si (111) substrates by radio frequency (RF) magnetron sputtering deposition method. The sheet resistance of VO{sub 2} has a significant change (close to 5 orders of magnitude) in the process of the metal-insulator phase transition (MIT). The field emission-scanning electron microscope (FE-SEM) results show the grain size of VO{sub 2} thin films is larger with the increase of oxygen flow. The X-ray diffraction (XRD) results indicate the thin films fabricated at different oxygen flow rates grow along the (011) crystalline orientation. As the oxygen flow rate increases from 3 sccm to 6 sccm, the phase transition temperature of the films reduces from 341 to 320 K, the width of the thermal hysteresis loop decreases from 32 to 9 K. The thin films fabricated in the condition of 5 sccm have a high temperature coefficient of resistance (TCR) -3.455%/K with a small resistivity of 2.795 ρ/Ω cm. (orig.)

Insulator applications in a Tokamak reactor

International Nuclear Information System (INIS)

Leger, D.

1986-06-01

Insulators, among which insulators ceramics, have great potential applications in fusion reactors. They will be used for all plasma-facing components as protection and, magnetic fusion devices being subject to large electrical currents flowing in any parts of the device, for their electrical insulating properties

Incipient 2D Mott insulators in extreme high electron density, ultra-thin GdTiO3/SrTiO3/GdTiO3 quantum wells

Science.gov (United States)

Allen, S. James; Ouellette, Daniel G.; Moetakef, Pouya; Cain, Tyler; Chen, Ru; Balents, Leon; Stemmer, Susanne

2013-03-01

By reducing the number of SrO planes in a GdTiO3 /SrTiO3/ GdTiO3 quantum well heterostructure, an electron gas with ~ fixed 2D electron density can be driven close to the Mott metal insulator transition - a quantum critical point at ~1 electron per unit cell. A single interface between the Mott insulator GdTiO3 and band insulator SrTiO3 has been shown to introduce ~ 1/2 electron per interface unit cell. Two interfaces produce a quantum well with ~ 7 1014 cm-2 electrons: at the limit of a single SrO layer it may produce a 2D magnetic Mott insulator. We use temperature and frequency dependent (DC - 3eV) conductivity and temperature dependent magneto-transport to understand the relative importance of electron-electron interactions, electron-phonon interactions, and surface roughness scattering as the electron gas is compressed toward the quantum critical point. Terahertz time-domain and FTIR spectroscopies, measure the frequency dependent carrier mass and scattering rate, and the mid-IR polaron absorption as a function of quantum well thickness. At the extreme limit of a single SrO plane, we observe insulating behavior with an optical gap substantially less than that of the surrounding GdTiO3, suggesting a novel 2D Mott insulator. MURI program of the Army Research Office - Grant No. W911-NF-09-1-0398

Electronic transport in bismuth selenide in the topological insulator regime

Science.gov (United States)

Kim, Dohun

The 3D topological insulators (TIs) have an insulating bulk but spin-momentum coupled metallic surface states stemming from band inversion due to strong spin-orbit interaction, whose existence is guaranteed by the topology of the band structure of the insulator. While the STI surface state has been studied spectroscopically by e.g. photoemission and scanned probes, transport experiments have failed to demonstrate clear signature of the STI due to high level of bulk conduction. In this thesis, I present experimental results on the transport properties of TI material Bi2Se3 in the absence of bulk conduction (TI regime), achieved by applying novel p-type doping methods. Field effect transistors consisting of thin (thickness: 5-17 nm) Bi2Se3 are fabricated by mechanical exfoliation of single crystals, and a combination of conventional dielectric (300 nm thick SiO2) and electrochemical or chemical gating methods are used to move the Fermi energy through the surface Dirac point inside bulk band gap, revealing the ambipolar gapless nature of transport in the Bi2Se3 surface states. The minimum conductivity of the topological surface state is understood within the self-consistent theory of Dirac electrons in the presence of charged impurities. The intrinsic finite-temperature resistivity of the topological surface state due to electron-acoustic phonon scattering is measured to be 60 times larger than that of graphene largely due to the smaller Fermi and sound velocities in Bi2Se 3, which will have implications for topological electronic devices operating at room temperature. Along with semi-classical Boltzmann transport, I also discuss 2D weak anti-localization (WAL) behavior of the topological surface states. By investigating gate-tuned WAL behavior in thin (5-17 nm) TI films, I show that WAL in the TI regime is extraordinarily sensitive to the hybridization induced quantum mechanical tunneling between top and bottom topological surfaces, and interplay of phase coherence

Secondary emission ion analyzer provided with an electron gun for insulating material analysis

International Nuclear Information System (INIS)

Blanchard, Bruno; Carrier, Patrick; Marguerite, J.-L.; Rocco, J.-C.

1976-01-01

This invention relates to a secondary emission ion analyser, fitted with an electron gun. It is used in the mass spectrometry analysis of electrically insulating bodies. It has already been suggested to bombard the target with an electron beam in conjunction with the beam of primary particles, in order to reduce the space charge near the target. The object of this invention is the application of this known process to appliances of the ion analyser type with a high electric field near the target. Its main characteristic is the use of an electron gun emitting an electron beam through the extraction lens placed opposite the target. The extraction electric field influences the path of the electrons but the electric and mechanical specifications of the electron gun in the invention are such that the target is correctly sprayed by the electron beam [fr

Electron Band Alignment at Interfaces of Semiconductors with Insulating Oxides: An Internal Photoemission Study

Directory of Open Access Journals (Sweden)

Valeri V. Afanas'ev

2014-01-01

Full Text Available Evolution of the electron energy band alignment at interfaces between different semiconductors and wide-gap oxide insulators is examined using the internal photoemission spectroscopy, which is based on observations of optically-induced electron (or hole transitions across the semiconductor/insulator barrier. Interfaces of various semiconductors ranging from the conventional silicon to the high-mobility Ge-based (Ge, Si1-xGex, Ge1-xSnx and AIIIBV group (GaAs, InxGa1-xAs, InAs, GaP, InP, GaSb, InSb materials were studied revealing several general trends in the evolution of band offsets. It is found that in the oxides of metals with cation radii larger than ≈0.7 Å, the oxide valence band top remains nearly at the same energy (±0.2 eV irrespective of the cation sort. Using this result, it becomes possible to predict the interface band alignment between oxides and semiconductors as well as between dissimilar insulating oxides on the basis of the oxide bandgap width which are also affected by crystallization. By contrast, oxides of light elements, for example, Be, Mg, Al, Si, and Sc exhibit significant shifts of the valence band top. General trends in band lineup variations caused by a change in the composition of semiconductor photoemission material are also revealed.

Code development for analysis of MHD pressure drop reduction in a liquid metal blanket using insulation technique based on a fully developed flow model

International Nuclear Information System (INIS)

Smolentsev, Sergey; Morley, Neil; Abdou, Mohamed

2005-01-01

The paper presents details of a new numerical code for analysis of a fully developed MHD flow in a channel of a liquid metal blanket using various insulation techniques. The code has specially been designed for channels with a 'sandwich' structure of several materials with different physical properties. The code includes a finite-volume formulation, automatically generated Hartmann number sensitive meshes, and effective convergence acceleration technique. Tests performed at Ha ∼ 10 4 have showed very good accuracy. As an illustration, two blanket flows have been considered: Pb-17Li flow in a channel with a silicon carbide flow channel insert, and Li flow in a channel with insulating coating

Experimental verification of acoustic pseudospin multipoles in a symmetry-broken snowflakelike topological insulator

Science.gov (United States)

Zhang, Zhiwang; Tian, Ye; Cheng, Ying; Liu, Xiaojun; Christensen, Johan

2017-12-01

Topologically protected wave engineering in artificially structured media resides at the frontier of ongoing metamaterials research, which is inspired by quantum mechanics. Acoustic analogs of electronic topological insulators have recently led to a wealth of new opportunities in manipulating sound propagation by means of robust edge mode excitations through analogies drawn to exotic quantum states. A variety of artificial acoustic systems hosting topological edge states have been proposed analogous to the quantum Hall effect, topological insulators, and Floquet topological insulators in electronic systems. However, those systems were characterized by a fixed geometry and a very narrow frequency response, which severely hinders the exploration and design of useful applications. Here we establish acoustic multipolar pseudospin states as an engineering degree of freedom in time-reversal invariant flow-free phononic crystals and develop reconfigurable topological insulators through rotation of their meta-atoms and reshaping of the metamolecules. Specifically, we show how rotation forms man-made snowflakelike molecules, whose topological phase mimics pseudospin-down (pseudospin-up) dipolar and quadrupolar states, which are responsible for a plethora of robust edge confined properties and topological controlled refraction disobeying Snell's law.

Secondary electron emission and self-consistent charge transport in semi-insulating samples

Energy Technology Data Exchange (ETDEWEB)

Fitting, H.-J. [Institute of Physics, University of Rostock, Universitaetsplatz 3, D-18051 Rostock (Germany); Touzin, M. [Unite Materiaux et Transformations, UMR CNRS 8207, Universite de Lille 1, F-59655 Villeneuve d' Ascq (France)

2011-08-15

Electron beam induced self-consistent charge transport and secondary electron emission (SEE) in insulators are described by means of an electron-hole flight-drift model (FDM) now extended by a certain intrinsic conductivity (c) and are implemented by an iterative computer simulation. Ballistic secondary electrons (SE) and holes, their attenuation to drifting charge carriers, and their recombination, trapping, and field- and temperature-dependent detrapping are included. As a main result the time dependent ''true'' secondary electron emission rate {delta}(t) released from the target material and based on ballistic electrons and the spatial distributions of currents j(x,t), charges {rho}(x,t), field F(x,t), and potential V(x,t) are obtained where V{sub 0} = V(0,t) presents the surface potential. The intrinsic electronic conductivity limits the charging process and leads to a conduction sample current to the support. In that case the steady-state total SE yield will be fixed below the unit: i.e., {sigma} {eta} + {delta} < 1.

c -Axis Dimer and Its Electronic Breakup: The Insulator-to-Metal Transition in Ti2 O3

Science.gov (United States)

Chang, C. F.; Koethe, T. C.; Hu, Z.; Weinen, J.; Agrestini, S.; Zhao, L.; Gegner, J.; Ott, H.; Panaccione, G.; Wu, Hua; Haverkort, M. W.; Roth, H.; Komarek, A. C.; Offi, F.; Monaco, G.; Liao, Y.-F.; Tsuei, K.-D.; Lin, H.-J.; Chen, C. T.; Tanaka, A.; Tjeng, L. H.

2018-04-01

We report on our investigation of the electronic structure of Ti2 O3 using (hard) x-ray photoelectron and soft x-ray absorption spectroscopy. From the distinct satellite structures in the spectra, we have been able to establish unambiguously that the Ti-Ti c -axis dimer in the corundum crystal structure is electronically present and forms an a1 ga1 g molecular singlet in the low-temperature insulating phase. Upon heating, we observe a considerable spectral weight transfer to lower energies with orbital reconstruction. The insulator-metal transition may be viewed as a transition from a solid of isolated Ti-Ti molecules into a solid of electronically partially broken dimers, where the Ti ions acquire additional hopping in the a -b plane via the egπ channel, the opening of which requires consideration of the multiplet structure of the on-site Coulomb interaction.

Suppression of discharge breakdown of polyethylene insulation during electron beam irradiation to power cable

International Nuclear Information System (INIS)

Sasaki, T.; Hosoi, F.; Kasai, N.; Hagiwara, M.

1981-01-01

In an attempt to apply the electron beam process to the crosslinking procedure for polyethylene insulation of high tension power cables, the suppression of discharge breakdown during irradiation has been investigated in the presence of crosslinking agents. Alkylamines of strong basicity and secondary or tertiary alcoholamines were found to be effective additives to suppress the discharge breakdown. The retardation of crosslinking by amines was minimized by reducing the amount of an amine and adding an alcohol instead. Polyethylene compounds contaning crosslinking agents, amines and alcohols which gave properties suitable for insulating a cable were obtained. The feasibility of these results are ascertained by irradiating cable specimens of a 22 kV class. (author)

Surface conduction of topological Dirac electrons in bulk insulating Bi2Se3

Science.gov (United States)

Fuhrer, Michael

2013-03-01

The three dimensional strong topological insulator (STI) is a new phase of electronic matter which is distinct from ordinary insulators in that it supports on its surface a conducting two-dimensional surface state whose existence is guaranteed by topology. I will discuss experiments on the STI material Bi2Se3, which has a bulk bandgap of 300 meV, much greater than room temperature, and a single topological surface state with a massless Dirac dispersion. Field effect transistors consisting of thin (3-20 nm) Bi2Se3 are fabricated from mechanically exfoliated from single crystals, and electrochemical and/or chemical gating methods are used to move the Fermi energy into the bulk bandgap, revealing the ambipolar gapless nature of transport in the Bi2Se3 surface states. The minimum conductivity of the topological surface state is understood within the self-consistent theory of Dirac electrons in the presence of charged impurities. The intrinsic finite-temperature resistivity of the topological surface state due to electron-acoustic phonon scattering is measured to be ~60 times larger than that of graphene largely due to the smaller Fermi and sound velocities in Bi2Se3, which will have implications for topological electronic devices operating at room temperature. As samples are made thinner, coherent coupling of the top and bottom topological surfaces is observed through the magnitude of the weak anti-localization correction to the conductivity, and, in the thinnest Bi2Se3 samples (~ 3 nm), in thermally-activated conductivity reflecting the opening of a bandgap.

On a possibility of creation of positive space charge cloud in a system with magnetic insulation of electrons

International Nuclear Information System (INIS)

Goncharov, A.A.; Dobrovol'skii, A.M.; Dunets, S.P.; Evsyukov, A.N.; Protsenko, I.M.

2009-01-01

We describe a new approach for creation an effective, low-cost, low-maintenance axially symmetric plasma optical tools for focusing and manipulating high-current beams of negatively charged particles, electrons and negative ions. This approach is based on fundamental plasma optical concept of magnetic insulation of electrons and non-magnetized positive ions providing creation of controlled uncompensated cloud of the space charge. The axially symmetric electrostatic plasma optical lens is well-known and well developed tool where this concept is used successfully. This provides control and focusing high-current positive ion beams in wide range of parameters. Here for the first time we present optimistic experimental results describing the application of an idea of magnetic insulation of electrons for generation of the stable cloud of positive space charge by focusing onto axis the converging stream of heavy ions produced by circular accelerator with closed electron drift. The estimations of a maximal concentration of uncompensated cloud of positive ions are also made

Panels of microporous insulation

Energy Technology Data Exchange (ETDEWEB)

McWilliams, J.A.; Morgan, D.E.; Jackson, J.D.J.

1990-08-07

Microporous thermal insulation materials have a lattice structure in which the average interstitial dimension is less than the mean free path of the molecules of air or other gas in which the material is arranged. This results in a heat flow which is less than that attributable to the molecular heat diffusion of the gas. According to this invention, a method is provided for manufacturing panels of microporous thermal insulation, in particular such panels in which the insulation material is bonded to a substrate. The method comprises the steps of applying a film of polyvinyl acetate emulsion to a non-porous substrate, and compacting powdery microporous thermal insulation material against the film so as to cause the consolidated insulation material to bond to the substrate and form a panel. The polyvinyl acetate may be applied by brushing or spraying, and is preferably allowed to dry prior to compacting the insulation material. 1 fig.

Influence of nonuniform external magnetic fields and anode--cathode shaping on magnetic insulation in coaxial transmission lines

International Nuclear Information System (INIS)

Mostrom, M.A.

1979-01-01

Coaxial transmission lines, used to transfer the high voltage pulse into the diode region of a relativistic electron beam generator, have been studied using the two-dimensional time-dependent fully relativistic and electromagnetic particle simulation code CCUBE. A simple theory of magnetic insulation that agrees well with simulation results for a straight cylindrical coax in a uniform external magnetic field is used to interpret the effects of anode--cathode shaping and nonuniform external magnetic fields. Loss of magnetic insulation appears to be minimized by satisfying two conditions: (1) the cathode surface should follow a flux surface of the external magnetic field; (2) the anode should then be shaped to insure that the magnetic insulation impedance, including transients, is always greater than the effective load impedance wherever there is an electron flow in the anode--cathode gap

Magnetic insulation in triplate and coaxial vacuum transmission lines. Report PIFR-1009

International Nuclear Information System (INIS)

Di Capua, M.; Pellinen, D.G.

1980-08-01

An experimental investigation was made of magnetically insulated transmission lines for use in an electron beam fusion accelerator. The magnetically insulated vacuum transmission lines would transfer the power pulses from many modules to a single diode region or multiple diodes to generate currents on the order of 100 MA. This approach may allow present limits on power flow through dielectric vacuum interfaces to be overcome. We have investigated symmetric parallel plate (triplate) transmission lines with a wave impedance of 24 Ω and a spacing of 1.9 cm, and coaxial transmission lines (coax) with a wave impedance of 42 Ω and a spacing of 2.9 cm

55-TW magnetically insulated transmission-line system: Design, simulations, and performance

Directory of Open Access Journals (Sweden)

W. A. Stygar

2009-12-01

Full Text Available We describe herein a system of self-magnetically insulated vacuum transmission lines (MITLs that operated successfully at 20 MA, 3 MV, and 55 TW. The system delivered the electromagnetic-power pulse generated by the Z accelerator to a physics-package load on over 1700 Z shots. The system included four levels that were electrically in parallel. Each level consisted of a water flare, vacuum-insulator stack, vacuum flare, and 1.3-m-radius conical outer MITL. The outputs of the four outer MITLs were connected in parallel by a 7.6-cm-radius 12-post double-post-hole vacuum convolute. The convolute added the currents of the four outer MITLs, and delivered the combined current to a single 6-cm-long inner MITL. The inner MITL delivered the current to the load. The total initial inductance of the stack-MITL system was 11 nH. A 300-element transmission-line-circuit model of the system has been developed using the tl code. The model accounts for the following: (i impedance and electrical length of each of the 300 circuit elements, (ii electron emission from MITL-cathode surfaces wherever the electric field has previously exceeded a constant threshold value, (iii Child-Langmuir electron loss in the MITLs before magnetic insulation is established, (iv MITL-flow-electron loss after insulation, assuming either collisionless or collisional electron flow, (v MITL-gap closure, (vi energy loss to MITL conductors operated at high lineal current densities, (vii time-dependent self-consistent inductance of an imploding z-pinch load, and (viii load resistance, which is assumed to be constant. Simulations performed with the tl model demonstrate that the nominal geometric outer-MITL-system impedance that optimizes overall performance is a factor of ∼3 greater than the convolute-load impedance, which is consistent with an analytic model of an idealized MITL-load system. Power-flow measurements demonstrate that, until peak current, the Z stack-MITL system

Thermal insulation

International Nuclear Information System (INIS)

Durston, J.G.; Birch, W.; Facer, R.I.; Stuart, R.A.

1977-01-01

Reference is made to liquid metal cooled nuclear reactors. In the arrangement described the reactor vessel is clad with thermal insulation comprising a layer of insulating blocks spaced from the wall and from each other; each block is rigidly secured to the wall, and the interspaces are substantially closed against convectional flow of liquid by resilient closure members. A membrane covering is provided for the layer of blocks, with venting means to allow liquid from the reactor vessel to penetrate between the covering and the layer of blocks. The membrane covering may comprise a stainless steel sheet ribbed in orthogonal pattern to give flexibility for the accommodation of thermal strain. The insulating blocks may be comprised of stainless steel or cellular or porous material and may be hollow shells containing ceramic material or gas fillings. (U.K.)

Ion beam enhancement in magnetically insulated ion diodes for high-intensity pulsed ion beam generation in non-relativistic mode

Energy Technology Data Exchange (ETDEWEB)

Zhu, X. P. [Key Laboratory of Materials Modification by Laser, Ion, and Electron Beams, Ministry of Education, Dalian University of Technology, Dalian 116024 (China); Surface Engineering Laboratory, School of Materials Science and Engineering, Dalian University of Technology, Dalian 116024 (China); Zhang, Z. C.; Lei, M. K., E-mail: surfeng@dlut.edu.cn [Surface Engineering Laboratory, School of Materials Science and Engineering, Dalian University of Technology, Dalian 116024 (China); Pushkarev, A. I. [Surface Engineering Laboratory, School of Materials Science and Engineering, Dalian University of Technology, Dalian 116024 (China); Laboratory of Beam and Plasma Technology, High Technologies Physics Institute, Tomsk Polytechnic University, 30, Lenin Ave, 634050 Tomsk (Russian Federation)

2016-01-15

High-intensity pulsed ion beam (HIPIB) with ion current density above Child-Langmuir limit is achieved by extracting ion beam from anode plasma of ion diodes with suppressing electron flow under magnetic field insulation. It was theoretically estimated that with increasing the magnetic field, a maximal value of ion current density may reach nearly 3 times that of Child-Langmuir limit in a non-relativistic mode and close to 6 times in a highly relativistic mode. In this study, the behavior of ion beam enhancement by magnetic insulation is systematically investigated in three types of magnetically insulated ion diodes (MIDs) with passive anode, taking into account the anode plasma generation process on the anode surface. A maximal enhancement factor higher than 6 over the Child-Langmuir limit can be obtained in the non-relativistic mode with accelerating voltage of 200–300 kV. The MIDs differ in two anode plasma formation mechanisms, i.e., surface flashover of a dielectric coating on the anode and explosive emission of electrons from the anode, as well as in two insulation modes of external-magnetic field and self-magnetic field with either non-closed or closed drift of electrons in the anode-cathode (A-K) gap, respectively. Combined with ion current density measurement, energy density characterization is employed to resolve the spatial distribution of energy density before focusing for exploring the ion beam generation process. Consistent results are obtained on three types of MIDs concerning control of neutralizing electron flows for the space charge of ions where the high ion beam enhancement is determined by effective electron neutralization in the A-K gap, while the HIPIB composition of different ion species downstream from the diode may be considerably affected by the ion beam neutralization during propagation.

Intense-proton-beam transport through an insulator beam guide

International Nuclear Information System (INIS)

Hanamori, Susumu; Kawata, Shigeo; Kikuchi, Takashi; Fujita, Akira; Chiba, Yasunobu; Hikita, Taisuke; Kato, Shigeru

1998-01-01

In this paper we study intense-proton-beam transport through an insulator guide. In our previous papers (Jpn. J. Appl. Phys. 34 (1995) L520, Jpn. J. Appl. Phys. 35 (1996) L1127) we proposed a new system for intense-electron-beam transport using an insulator guide. In contrast to the electron beam, an intense-proton beam tends to generate a virtual anode, because of the large proton mass. The virtual anode formation at the initial stage is prevented by prefilled plasma in this system. During and after this, electrons are extracted from the plasma generated at the insulator surface by the proton beam space charge and expand over the transport area. The proton beam charge is effectively neutralized by the electrons. Consequently, the proton beam propagates efficiently through the insulator beam guide. The electron extraction is self-regulated by the net space charge of the proton beam. (author)

PROTO-II: a short pulse water insulated accelerator

International Nuclear Information System (INIS)

Martin, T.H.; VanDevender, J.P.; Johnson, D.L.; McDaniel, D.H.; Aker, M.

1975-01-01

A new accelerator, designated Proto-II, is presently under construction at Sandia Laboratories. Proto-II will have a nominal output of 100 kJ into a two-sided diode at a voltage of 1.5 MV and a total current of over 6 MA for 24 ns. This accelerator will be utilized for electron beam fusion experiments and for pulsed power and developmental studies leading to a proposed further factor of five scale-up in power. The design of Proto-II is based upon recent water switching developments and represents a 10-fold extrapolation of those results. Initial testing of Proto-II is scheduled to begin in 1976. Proto-II power flow starts with eight Marx generators which charge 16 water-insulated storage capacitors. Eight triggered, 3 MV, SF 6 gas-insulated switches next transfer the energy through oil-water interfaces into the first stage of 16 parallel lines. Next, the 16 first stages transfer their energy into the pulse forming lines and fast switching sections.The energy is then delivered to two converging, back-to-back, disk-shaped transmission line. Two back-to-back diodes then form the electron beams which are focused onto a common anode

Probing of flowing electron plasmas

International Nuclear Information System (INIS)

Himura, H.; Nakashima, C.; Saito, H.; Yoshida, Z.

2001-01-01

Probing of streaming electron plasmas with finite temperature is studied. For the first time, a current-voltage characteristic of an electric probe is measured in electron plasmas. Due to the fast flow of the electron plasmas, the characteristic curve spreads out significantly and exhibits a long tail. This feature can be explained calculating the currents collected to the probe. In flowing electron plasmas, the distribution function observed in the laboratory frame is non-Maxwellian even if the plasmas come to a state of thermal equilibrium. Another significant feature of the characteristic is that it determines a floating potential where the current equals zero, despite there being very few ions in the electron plasma. A high impedance probe, which is popularly used to determine the space potential of electron plasmas, outputs the potential. The method is available only for plasmas with density much smaller than the Brillouin limit

Metal-insulator transitions

Science.gov (United States)

Imada, Masatoshi; Fujimori, Atsushi; Tokura, Yoshinori

1998-10-01

Metal-insulator transitions are accompanied by huge resistivity changes, even over tens of orders of magnitude, and are widely observed in condensed-matter systems. This article presents the observations and current understanding of the metal-insulator transition with a pedagogical introduction to the subject. Especially important are the transitions driven by correlation effects associated with the electron-electron interaction. The insulating phase caused by the correlation effects is categorized as the Mott Insulator. Near the transition point the metallic state shows fluctuations and orderings in the spin, charge, and orbital degrees of freedom. The properties of these metals are frequently quite different from those of ordinary metals, as measured by transport, optical, and magnetic probes. The review first describes theoretical approaches to the unusual metallic states and to the metal-insulator transition. The Fermi-liquid theory treats the correlations that can be adiabatically connected with the noninteracting picture. Strong-coupling models that do not require Fermi-liquid behavior have also been developed. Much work has also been done on the scaling theory of the transition. A central issue for this review is the evaluation of these approaches in simple theoretical systems such as the Hubbard model and t-J models. Another key issue is strong competition among various orderings as in the interplay of spin and orbital fluctuations. Experimentally, the unusual properties of the metallic state near the insulating transition have been most extensively studied in d-electron systems. In particular, there is revived interest in transition-metal oxides, motivated by the epoch-making findings of high-temperature superconductivity in cuprates and colossal magnetoresistance in manganites. The article reviews the rich phenomena of anomalous metallicity, taking as examples Ti, V, Cr, Mn, Fe, Co, Ni, Cu, and Ru compounds. The diverse phenomena include strong spin and

Topological insulators fundamentals and perspectives

CERN Document Server

Ortmann, Frank; Valenzuela, Sergio O

2015-01-01

There are only few discoveries and new technologies in physical sciences that have the potential to dramatically alter and revolutionize our electronic world. Topological insulators are one of them. The present book for the first time provides a full overview and in-depth knowledge about this hot topic in materials science and condensed matter physics. Techniques such as angle-resolved photoemission spectrometry (ARPES), advanced solid-state Nuclear Magnetic Resonance (NMR) or scanning-tunnel microscopy (STM) together with key principles of topological insulators such as spin-locked electronic

Cooper Pairs in Insulators?

International Nuclear Information System (INIS)

Valles, James

2008-01-01

Nearly 50 years elapsed between the discovery of superconductivity and the emergence of the microscopic theory describing this zero resistance state. The explanation required a novel phase of matter in which conduction electrons joined in weakly bound pairs and condensed with other pairs into a single quantum state. Surprisingly, this Cooper pair formation has also been invoked to account for recently uncovered high-resistance or insulating phases of matter. To address this possibility, we have used nanotechnology to create an insulating system that we can probe directly for Cooper pairs. I will present the evidence that Cooper pairs exist and dominate the electrical transport in these insulators and I will discuss how these findings provide new insight into superconductor to insulator quantum phase transitions.

MHD pressure drop of imperfect insulation of liquid metal flow

International Nuclear Information System (INIS)

Horiike, H.; Nishiura, R.; Inoue, S.; Miyazaki, K.

2000-01-01

An experiment was performed to study magnetohydrodynamic (MHD) pressure gradient in the case of an imperfect electric insulation coating when using NaK loop. Test channels with uniform defects in their coating were made by painting inner surface with acrylic lacquer insulation. It was found that the exponent to B -- which is 1 for insulated walls, and 2 for conducting ones, was very sensitive to crack fractions lower than 25%. The pressure gradient was found to increase almost linearly with the fraction

Bonded stacked-ring insulator for the Antares electron gun

International Nuclear Information System (INIS)

Stine, R.D.; Allen, G.R.; Eaton, E.; Weinstein, B.

1982-01-01

A large diameter insulator utilizing epoxy bonding which has sufficient mechanical strength to support the 3000 kg cathode/grid assembly was developed. Bonding the insulator simplifies the handling and reduces the number of 0-ring seals to a minimum. We have described the material selection, bonding techniques and electrical design approach

First principles description of the insulator-metal transition in europium monoxide

KAUST Repository

Wang, Hao

2012-02-01

Europium monoxide, EuO, is a ferromagnetic insulator. Its electronic structure under pressure and doping is investigated by means of density functional theory. We employ spin polarized electronic structure calculations including onsite electron-electron interaction for the localized Eu 4f and 5d electrons. Our results show that under pressure the ferromagnetism is stable, both for hydrostatic and uniaxial pressure, while the compound undergoes an insulator-metal transition. The insulator-metal transition in O deficient and Gd doped EuO is reproduced for an impurity concentration of 6.25%. A 10 monolayer thick EuO(1 0 0) thin film is predicted to be an insulator with a narrow band gap of 0.08 eV. © 2011 Elsevier B.V. All rights reserved.

Effect of Slow External Flow on Flame Spreading over Solid Material: Opposed Spreading over Polyethylene Wire Insulation

Science.gov (United States)

Fujita, O.; Nishizawa, K.; Ito, K.; Olson, S. L.; Kashigawa, T.

2001-01-01

The effect of slow external flow on solid combustion is very important from the view of fire safety in space because the solid material in spacecraft is generally exposed to the low air flow for ventilation. Further, the effect of low external flow on fuel combustion is generally fundamental information for industrial combustion system, such as gas turbine, boiler incinerator and so on. However, it is difficult to study the effect of low external flow on solid combustion in normal gravity, because the buoyancy-induced flow strongly disturbs the flow field, especially for low flow velocity. In this research therefore, the effect of slow external flow on opposed flame spreading over polyethylene (PE) wire insulation have been investigated in microgravity. The microgravity environment was provided by Japan Microgravity Center (JAMIC) in Japan and KC-135 at NASA GRC. The tested flow velocity range is 0-30cm/s with different oxygen concentration and inert gas component.

Electronic phase separation in insulating (Ga, Mn) As with low compensation: super-paramagnetism and hopping conduction

Science.gov (United States)

Yuan, Ye; Wang, Mao; Xu, Chi; Hübner, René; Böttger, Roman; Jakiela, Rafal; Helm, Manfred; Sawicki, Maciej; Zhou, Shengqiang

2018-03-01

In the present work, low compensated insulating (Ga,Mn)As with 0.7% Mn is obtained by ion implantation combined with pulsed laser melting. The sample shows variable-range hopping transport behavior with a Coulomb gap in the vicinity of the Fermi energy, and the activation energy is reduced by an external magnetic field. A blocking super-paramagnetism is observed rather than ferromagnetism. Below the blocking temperature, the sample exhibits a colossal negative magnetoresistance. Our studies confirm that the disorder-induced electronic phase separation occurs in (Ga,Mn)As samples with a Mn concentration in the insulator-metal transition regime, and it can account for the observed superparamagnetism and the colossal magnetoresistance.

Concentration-elastic-stress instabilities in the distribution of ions and neutral particles in the insulator layer at the semiconductor surface

International Nuclear Information System (INIS)

Gol'dman, E. I.

2006-01-01

Mobile impurities in the form of ions and neutral associations are present in the insulator films that isolate the semiconductor from the metal electrode. If temperatures and the polarizing electric field are sufficiently high, impurities concentrate at the insulator-semiconductor interface where they exchange electrons with the semiconductor. It is shown that the pairwise interaction of particles via the field of elastic stresses caused by the concentration-related expansion of the insulator can give rise to an instability in the impurity distribution that is uniform over the contact. The stationary small-scale ordering of the particles over the contact of the insulator with the semiconductor arises in the solution of point defects, which is accompanied by annular flows of the particles

Systems and methods for the magnetic insulation of accelerator electrodes in electrostatic accelerators

Science.gov (United States)

Grisham, Larry R

2013-12-17

The present invention provides systems and methods for the magnetic insulation of accelerator electrodes in electrostatic accelerators. Advantageously, the systems and methods of the present invention improve the practically obtainable performance of these electrostatic accelerators by addressing, among other things, voltage holding problems and conditioning issues. The problems and issues are addressed by flowing electric currents along these accelerator electrodes to produce magnetic fields that envelope the accelerator electrodes and their support structures, so as to prevent very low energy electrons from leaving the surfaces of the accelerator electrodes and subsequently picking up energy from the surrounding electric field. In various applications, this magnetic insulation must only produce modest gains in voltage holding capability to represent a significant achievement.

Dark current of organic heterostructure devices with insulating spacer layers

Science.gov (United States)

Yin, Sun; Nie, Wanyi; Mohite, Aditya D.; Saxena, Avadh; Smith, Darryl L.; Ruden, P. Paul

2015-03-01

The dark current density at fixed voltage bias in donor/acceptor organic planar heterostructure devices can either increase or decrease when an insulating spacer layer is added between the donor and acceptor layers. The dominant current flow process in these systems involves the formation and subsequent recombination of an interfacial exciplex state. If the exciplex formation rate limits current flow, the insulating interface layer can increase dark current whereas, if the exciplex recombination rate limits current flow, the insulating interface layer decreases dark current. We present a device model to describe this behavior and illustrate it experimentally for various donor/acceptor systems, e.g. P3HT/LiF/C60.

Improvements in the reliability of a-InGaZnO thin-film transistors with triple stacked gate insulator in flexible electronics applications

Energy Technology Data Exchange (ETDEWEB)

Chen, Hua-Mao [Department of Photonics & Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu, Taiwan (China); Chang, Ting-Chang, E-mail: tcchang3708@gmail.com [Department of Physics, National Sun Yat-Sen University, Kaohsiung, Taiwan (China); Department of Photonics, National Sun Yat-Sen University, Kaohsiung, Taiwan (China); Advanced Optoelectronics Technology Center, National Cheng Kung University, Taiwan (China); Tai, Ya-Hsiang [Department of Photonics & Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu, Taiwan (China); Chen, Kuan-Fu [Department of Physics, National Sun Yat-Sen University, Kaohsiung, Taiwan (China); Chiang, Hsiao-Cheng [Department of Photonics, National Sun Yat-Sen University, Kaohsiung, Taiwan (China); Liu, Kuan-Hsien [Department of Electrophysics, National Chiao Tung University, Hsinchu, Taiwan (China); Lee, Chao-Kuei [Department of Photonics, National Sun Yat-Sen University, Kaohsiung, Taiwan (China); Lin, Wei-Ting; Cheng, Chun-Cheng; Tu, Chun-Hao; Liu, Chu-Yu [Advanced Technology Research Center, AU Optronics Corp, Hsinchu, Taiwan (China)

2015-11-30

This study examined the impact of the low-temperature stacking gate insulator on the gate bias instability of a-InGaZnO thin film transistors in flexible electronics applications. Although the quality of SiN{sub x} at low process/deposition temperature is better than that of SiO{sub x} at similarly low process/deposition temperature, there is still a very large positive threshold voltage (V{sub th}) shift of 9.4 V for devices with a single low-temperature SiN{sub x} gate insulator under positive gate bias stress. However, a suitable oxide–nitride–oxide-stacked gate insulator exhibits a V{sub th} shift of only 0.23 V. This improvement results from the larger band offset and suitable gate insulator thickness that can effectively suppress carrier trapping behavior. - Highlights: • The cause of the bias instability for a low-temperature gate insulator is verified. • A triple-stacked gate insulator was fabricated. • A suitable triple stacked gate insulator shows only 0.23 V threshold voltage shift.

Theoretical study on air flow in a solar chimney with real insulation conditions; Estudo teorico do escoamento de ar em uma chamine solar com condicoes reais de insolacao

Energy Technology Data Exchange (ETDEWEB)

Ferreira, Andre Guimaraes; Cortez, Marcio Fonte-Boa; Molina Valle, Ramon; Brasil, Cristiana Santiago [Minas Gerais Univ., Belo Horizonte, MG, (Brazil). Dept. de Engenharia Mecanica]. E-mail: ferreira@demec.ufmg.br

2000-07-01

This paper presents a theoretical analysis of the turbulent air flow with real conditions of insulation inside a solar chimney. The flow is described by the mass, momentum and energy conservation equations, besides the transport equations of the quantities in the turbulence model (k and epsilon). Dimensionless parameters are presented at way out the device, as function of time and the insulation conditions, represented by the soil and the roof heating.

Imaging electron flow from collimating contacts in graphene

Science.gov (United States)

Bhandari, S.; Lee, G. H.; Watanabe, K.; Taniguchi, T.; Kim, P.; Westervelt, R. M.

2018-04-01

The ballistic motion of electrons in graphene opens exciting opportunities for electron-optic devices based on collimated electron beams. We form a collimating contact in a hBN-encapsulated graphene hall bar by adding zigzag contacts on either side of an electron emitter that absorb stray electrons; collimation can be turned off by floating the zig-zag contacts. The electron beam is imaged using a liquid-He cooled scanning gate microscope (SGM). The tip deflects electrons as they pass from the collimating contact to a receiving contact on the opposite side of the channel, and an image of electron flow can be made by displaying the change in transmission as the tip is raster scanned across the sample. The angular half width Δθ of the electron beam is found by applying a perpendicular magnetic field B that bends electron paths into cyclotron orbits. The images reveal that the electron flow from the collimating contact drops quickly at B  =  0.05 T when the electron orbits miss the receiving contact. The flow for the non-collimating case persists longer, up to B  =  0.19 T, due to the broader range of entry angles. Ray-tracing simulations agree well with the experimental images. By fitting the fields B at which the magnitude of electron flow drops in the experimental SGM images, we find Δθ  =  9° for electron flow from the collimating contact, compared with Δθ  =  54° for the non-collimating case.

On effective holographic Mott insulators

Energy Technology Data Exchange (ETDEWEB)

Baggioli, Matteo; Pujolàs, Oriol [Institut de Física d’Altes Energies (IFAE), Universitat Autònoma de Barcelona,The Barcelona Institute of Science and Technology,Campus UAB, 08193 Bellaterra (Barcelona) (Spain)

2016-12-20

We present a class of holographic models that behave effectively as prototypes of Mott insulators — materials where electron-electron interactions dominate transport phenomena. The main ingredient in the gravity dual is that the gauge-field dynamics contains self-interactions by way of a particular type of non-linear electrodynamics. The electrical response in these models exhibits typical features of Mott-like states: i) the low-temperature DC conductivity is unboundedly low; ii) metal-insulator transitions appear by varying various parameters; iii) for large enough self-interaction strength, the conductivity can even decrease with increasing doping (density of carriers) — which appears as a sharp manifestation of ‘traffic-jam’-like behaviour; iv) the insulating state becomes very unstable towards superconductivity at large enough doping. We exhibit some of the properties of the resulting insulator-superconductor transition, which is sensitive to the momentum dissipation rate in a specific way. These models imply a clear and generic correlation between Mott behaviour and significant effects in the nonlinear electrical response. We compute the nonlinear current-voltage curve in our model and find that indeed at large voltage the conductivity is largely reduced.

On effective holographic Mott insulators

International Nuclear Information System (INIS)

Baggioli, Matteo; Pujolàs, Oriol

2016-01-01

We present a class of holographic models that behave effectively as prototypes of Mott insulators — materials where electron-electron interactions dominate transport phenomena. The main ingredient in the gravity dual is that the gauge-field dynamics contains self-interactions by way of a particular type of non-linear electrodynamics. The electrical response in these models exhibits typical features of Mott-like states: i) the low-temperature DC conductivity is unboundedly low; ii) metal-insulator transitions appear by varying various parameters; iii) for large enough self-interaction strength, the conductivity can even decrease with increasing doping (density of carriers) — which appears as a sharp manifestation of ‘traffic-jam’-like behaviour; iv) the insulating state becomes very unstable towards superconductivity at large enough doping. We exhibit some of the properties of the resulting insulator-superconductor transition, which is sensitive to the momentum dissipation rate in a specific way. These models imply a clear and generic correlation between Mott behaviour and significant effects in the nonlinear electrical response. We compute the nonlinear current-voltage curve in our model and find that indeed at large voltage the conductivity is largely reduced.

Critical metal-insulator transition and divergence in a two-particle irreducible vertex in disordered and interacting electron systems

Czech Academy of Sciences Publication Activity Database

Janiš, Václav; Pokorný, Vladislav

2014-01-01

Roč. 90, č. 4 (2014), "045143-1"-"045143-11" ISSN 1098-0121 Institutional support: RVO:68378271 Keywords : metal-insulator transition * disordered and interacting electron systems * dynamical mean-field theory * critical behavior Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.736, year: 2014

Improved thermal monitoring of rotating machine insulation

International Nuclear Information System (INIS)

Stone, G.C.; Sedding, H.G.; Bernstein, B.S.

1991-01-01

Aging of motor and generator insulation is most often induced as a result of operation at high temperatures. In spite of this knowledge, stator and rotor temperatures are only crudely monitored in existing machines. In EPRI project RP2577-1, three new means of detecting machine temperatures were successfully developed. Two of the techniques, the Electronic Rotor Temperature Sensor and the Passive Rotor Temperature Sensor, were specifically developed to give point temperature readings on turbine generator rotor windings. The Insulation Sniffer allows operators to determine when any electrical insulation in a motor is overheating. Another electronic device, called the Thermal Life Indicator, helps operators and maintenance personnel determine how accumulated operation has affected the remaining life of the insulation in rotating machines. These new devices permit nuclear station operators to avoid hazardous operating conditions and will help to determine priorities for maintenance and plant life extension programs

Shorting time of magnetically insulated reflex-ion diodes from the neutral-atom charge-exchange mechanism

International Nuclear Information System (INIS)

Strobel, G.

1981-10-01

In a magnetically insulated diode, collision-free electrons return to the cathode and no electron current is present at the anode. Electron transport to the anode is studied in this paper. Steady-state space-charge-limited flow is assumed initially. Breakdown of ion flow occurs when static neutral atoms at the anode undergo charge exchange, which results in neutral atoms drifting across the diode. These are subsequently ionized by reflexing ions producing electrons trapped in Larmor orbits throughout the diode. These electrons drift to the anode via ionization and inelastic collisions with other neutral atoms. Model calculations compare the effects of foil and mesh cathodes. Steady-state space-charge-limited ion current densities are calculated. The neutral atom density at the cathode is determined as a function of time. The shorting time of the diode is scaled versus the electrode separation d, the diode potential V 0 , the magnetic field, and the initial concentration of static neutron atoms

Electron excitation relaxation in wide-gap single crystal insulators under swift heavy-ion irradiation

International Nuclear Information System (INIS)

Yavlinskii, Yu.N.

2000-01-01

A heavy, multicharged ion moving in a solid interacts with nuclei and electrons of the matter atoms. If the projectile velocity exceeds the typical orbital velocity of the target electrons, the main process is excitation of the electronic subsystem, i.e., excitation and ionization of bound electrons. Initially, relaxation of the electron excitations results from electronic processes alone, and energy transfer from electrons to lattice happens later. Since free charge carriers are absent in insulators before irradiation, the motion of the excited electrons is possible only together with holes. Due to inner pressure of the electron-hole plasma the expansion takes place. The velocity of the expansion is determined by the heat velocity of electron-hole pairs. As the excitation region expands, the density of the electron-hole pairs decreases, the average distance between pairs increases, and excitons are produced. The expansion can be terminated in the time t≅10 -13 s, when, due to the electron-phonon interaction, self-trapped holes (and excitons) are formed. The annihilation of the trapped excitons gives rise to Frenkel defects. The set of equations comprising the continuity equation, the Euler equation and energy conservation is considered. The analytic dependence on time of the electron temperature and the radius of the excitation region is derived. The observation of projectile traces in a target is discussed in the single projectile regime

Key-Insulated Undetachable Digital Signature Scheme and Solution for Secure Mobile Agents in Electronic Commerce

Directory of Open Access Journals (Sweden)

Yang Shi

2016-01-01

Full Text Available Considering the security of both the customers’ hosts and the eShops’ servers, we introduce the idea of a key-insulated undetachable digital signature, enabling mobile agents to generate undetachable digital signatures on remote hosts with the key-insulated property of the original signer’s signing key. From the theoretical perspective, we provide the formal definition and security notion of a key-insulated undetachable digital signature. From the practical perspective, we propose a concrete scheme to secure mobile agents in electronic commerce. The scheme is mainly focused on protecting the signing key from leakage and preventing the misuse of the signature algorithm on malicious servers. Agents do not carry the signing key when they generate digital signatures on behalf of the original signer, so the key is protected on remote servers. Furthermore, if a hacker gains the signing key of the original signer, the hacker is still unable to forge a signature for any time period other than the key being accessed. In addition, the encrypted function is combined with the original signer’s requirement to prevent the misuse of signing algorithm. The scheme is constructed on gap Diffie–Hellman groups with provable security, and the performance testing indicates that the scheme is efficient.

Numerical simulations of quantum many-body systems with applications to superfluid-insulator and metal-insulator transitions

International Nuclear Information System (INIS)

Niyaz, P.

1993-01-01

Quantum Monte Carlo techniques were used to study two quantum many-body systems, the one-dimensional extended boson-Hubbard Hamiltonian, a model of superfluid-insulator quantum phase transitions, and the two-dimensional Holstein Model, a model for electron-phonon interactions. For the extended boson-Hubbard model, the authors studied the ground state properties at commensurate filling (density = 1) and half-integer filling (density = 1/2). At commensurate filling, the system has two possible insulating phases for strong coupling. If the on-site repulsion dominates, the system freezes into an insulating phase where each site is singly occupied. If the intersite repulsion dominates, doubly occupied and empty sites alternate. At weak coupling, the system becomes a superfluid. The authors investigated the order of phase transitions between these different phases. At half-integer filling, the authors found one strong coupling insulating phase, where singly occupied and empty sites alternate, and a weak coupling superfluid phase. The authors also investigated the possibility of a supersolid phase and found no clear evidence of such a new phase. For the electron-phonon (Holstein) model, the authors focused on the finite temperature phase transition from a metallic state to an insulating charge density wave (CDW) state as the temperature is lowered. The authors present the first calculation of the spectral density from Monte Carlo data for this system. The authors also investigated the formation of a CDW state as a function of various parameters characterizing the electron-phonon interactions. Using these numerical results as benchmarks, the authors then investigated different levels of Migdal approximations. The authors found the solutions of a set of gapped Migdal-Eliashberg equations agreed qualitatively with the Monte Carlo results

Analytical study of electron flows with a virtual cathode

International Nuclear Information System (INIS)

Dubinov, A.E.

2000-01-01

The dynamics of the electron flow behavior by its injection into a half-space is considered. Two problems are considered, namely the long-term injection of a monoenergetic electron flow and instantaneous flow injection with an assigned electron energy spectrum. The all flow electrons in both cases return to the injection plane. The simple analytical self-consistent model of the initial stage of the virtual cathode formation in a plane-parallel equipotential gap is plotted in the course of analysis whereof the duration of the virtual cathode formation process is determined. The performance of this model is not limited by the multivalence of the electron velocity in the flow. This makes it possible to extend the frames of the model performance relative to the moment of the virtual cathode formation and to consider its dynamics. The frequency of electron oscillations in the potential cathode-virtual cathode well is determined on the basis of the above model [ru

Electron paramagnetic resonance of isolated Assub(Ga)+ antisite defect in neutron-transmutation doped semi-insulating GaAs

International Nuclear Information System (INIS)

Manasreh, M.O.; McDonald, P.F.; Kivlighn, S.A.; Minton, J.T.; Covington, B.C.

1988-01-01

The isolated Assub(Ga) antisite defect produced by the neutron-transmutation doping in semi-insulating GaAs was studied using the electron paramagnetic resonance technique. The results show that the optically induced quenching of the isolated Assub(Ga) + antisite defect is quite different from that of the EL2 center. Illumination with white light seems to always reduce the electron paramagnetic resonance spectrum suggesting that depopulation of the EL2 center does not introduce a noticeable change in the Assub(Ga) + antisite concentration. (author)

Temperature dependence of the electronic structure of semiconductors and insulators

Energy Technology Data Exchange (ETDEWEB)

Poncé, S., E-mail: samuel.pon@gmail.com; Gillet, Y.; Laflamme Janssen, J.; Gonze, X. [European Theoretical Spectroscopy Facility and Institute of Condensed Matter and Nanosciences, Université catholique de Louvain, Chemin des étoiles 8, bte L07.03.01, B-1348 Louvain-la-neuve (Belgium); Marini, A. [Consiglio Nazionale delle Ricerche (CNR), Via Salaria Km 29.3, CP 10, 00016 Monterotondo Stazione (Italy); Verstraete, M. [European Theoretical Spectroscopy Facility and Physique des matériaux et nanostructures, Université de Liège, Allée du 6 Août 17, B-4000 Liège (Belgium)

2015-09-14

The renormalization of electronic eigenenergies due to electron-phonon coupling (temperature dependence and zero-point motion effect) is sizable in many materials with light atoms. This effect, often neglected in ab initio calculations, can be computed using the perturbation-based Allen-Heine-Cardona theory in the adiabatic or non-adiabatic harmonic approximation. After a short description of the recent progresses in this field and a brief overview of the theory, we focus on the issue of phonon wavevector sampling convergence, until now poorly understood. Indeed, the renormalization is obtained numerically through a slowly converging q-point integration. For non-zero Born effective charges, we show that a divergence appears in the electron-phonon matrix elements at q → Γ, leading to a divergence of the adiabatic renormalization at band extrema. This problem is exacerbated by the slow convergence of Born effective charges with electronic wavevector sampling, which leaves residual Born effective charges in ab initio calculations on materials that are physically devoid of such charges. Here, we propose a solution that improves this convergence. However, for materials where Born effective charges are physically non-zero, the divergence of the renormalization indicates a breakdown of the adiabatic harmonic approximation, which we assess here by switching to the non-adiabatic harmonic approximation. Also, we study the convergence behavior of the renormalization and develop reliable extrapolation schemes to obtain the converged results. Finally, the adiabatic and non-adiabatic theories, with corrections for the slow Born effective charge convergence problem (and the associated divergence) are applied to the study of five semiconductors and insulators: α-AlN, β-AlN, BN, diamond, and silicon. For these five materials, we present the zero-point renormalization, temperature dependence, phonon-induced lifetime broadening, and the renormalized electronic band structure.

Surface potential measurement of negative-ion-implanted insulators by analysing secondary electron energy distribution

International Nuclear Information System (INIS)

Toyota, Yoshitaka; Tsuji, Hiroshi; Nagumo, Syoji; Gotoh, Yasuhito; Ishikawa, Junzo; Sakai, Shigeki.

1994-01-01

The negative ion implantation method we have proposed is a noble technique which can reduce surface charging of isolated electrodes by a large margin. In this paper, the way to specify the surface potential of negative-ion-implanted insulators by the secondary electron energy analysis is described. The secondary electron energy distribution is obtained by a retarding field type energy analyzer. The result shows that the surface potential of fused quartz by negative-ion implantation (C - with the energy of 10 keV to 40 keV) is negatively charged by only several volts. This surface potential is extremely low compared with that by positive-ion implantation. Therefore, the negative-ion implantation is a very effective method for charge-up free implantation without charge compensation. (author)

Interaction between extended and localized electronic states in the region of the metal to insulator transition in semiconductor alloys

Energy Technology Data Exchange (ETDEWEB)

Teubert, Joerg

2008-07-01

The first part of this work addresses the influence of those isovalent localized states on the electronic properties of (B,Ga,In)As. Most valuable were the measurements under hydrostatic pressure that revealed a pressure induced metal-insulator transition. One of the main ideas in this context is the trapping of carriers in localized B-related cluster states that appear in the bandgap at high pressure. The key conclusion that can be drawn from the experimental results is that boron atoms seem to have the character of isovalent electron traps, rendering boron as the first known isovalent trap induced by cationic substitution. In the second part, thermoelectric properties of (B,Ga,In)As and (Ga,In)(N,As) are studied. It was found that although the electric-field driven electronic transport in n-type (Ga,In)(N,As) and (B,Ga,In)As differs considerably from that of n-type GaAs, the temperature-gradient driven electronic transport is very similar for the three semiconductors, despite distinct differences in the conduction band structure of (Ga,In)(N,As) and (B,Ga,In)As compared to GaAs. The third part addresses the influence of magnetic interactions on the transport properties near the metal-insulator transition (MIT). Here, two scenarios are considered: Firstly the focus is set on ZnMnSe:Cl, a representative of so called dilute magnetic semiconductors (DMS). In this material Mn(2+) ions provide a large magnetic moment due to their half filled inner 3d-shell. It is shown that magnetic interactions in conjunction with disorder effects are responsible for the unusual magnetotransport behavior found in this and other II-Mn-VI semiconductor alloys. In the second scenario, a different magnetic compound, namely InSb:Mn, is of interest. It is a representative of the III-Mn-V DMS, where the magnetic impurity Mn serves both as the source of a large localized magnetic moment and as the source of a loosely bound hole due to its acceptor character. Up to now, little is known about

Interaction between extended and localized electronic states in the region of the metal to insulator transition in semiconductor alloys

International Nuclear Information System (INIS)

Teubert, Joerg

2008-01-01

The first part of this work addresses the influence of those isovalent localized states on the electronic properties of (B,Ga,In)As. Most valuable were the measurements under hydrostatic pressure that revealed a pressure induced metal-insulator transition. One of the main ideas in this context is the trapping of carriers in localized B-related cluster states that appear in the bandgap at high pressure. The key conclusion that can be drawn from the experimental results is that boron atoms seem to have the character of isovalent electron traps, rendering boron as the first known isovalent trap induced by cationic substitution. In the second part, thermoelectric properties of (B,Ga,In)As and (Ga,In)(N,As) are studied. It was found that although the electric-field driven electronic transport in n-type (Ga,In)(N,As) and (B,Ga,In)As differs considerably from that of n-type GaAs, the temperature-gradient driven electronic transport is very similar for the three semiconductors, despite distinct differences in the conduction band structure of (Ga,In)(N,As) and (B,Ga,In)As compared to GaAs. The third part addresses the influence of magnetic interactions on the transport properties near the metal-insulator transition (MIT). Here, two scenarios are considered: Firstly the focus is set on ZnMnSe:Cl, a representative of so called dilute magnetic semiconductors (DMS). In this material Mn(2+) ions provide a large magnetic moment due to their half filled inner 3d-shell. It is shown that magnetic interactions in conjunction with disorder effects are responsible for the unusual magnetotransport behavior found in this and other II-Mn-VI semiconductor alloys. In the second scenario, a different magnetic compound, namely InSb:Mn, is of interest. It is a representative of the III-Mn-V DMS, where the magnetic impurity Mn serves both as the source of a large localized magnetic moment and as the source of a loosely bound hole due to its acceptor character. Up to now, little is known about

Numerical simulation of cathode plasma dynamics in magnetically insulated vacuum transmission lines

International Nuclear Information System (INIS)

Thoma, C.; Genoni, T. C.; Welch, D. R.; Rose, D. V.; Clark, R. E.; Miller, C. L.; Stygar, W. A.; Kiefer, M. L.

2015-01-01

A novel algorithm for the simulation of cathode plasmas in particle-in-cell codes is described and applied to investigate cathode plasma evolution in magnetically insulated transmission lines (MITLs). The MITL electron sheath is modeled by a fully kinetic electron species. Electron and ion macroparticles, both modeled as fluid species, form a dense plasma which is initially localized at the cathode surface. Energetic plasma electron particles can be converted to kinetic electrons to resupply the electron flux at the plasma edge (the “effective” cathode). Using this model, we compare results for the time evolution of the cathode plasma and MITL electron flow with a simplified (isothermal) diffusion model. Simulations in 1D show a slow diffusive expansion of the plasma from the cathode surface. But in multiple dimensions, the plasma can expand much more rapidly due to anomalous diffusion caused by an instability due to the strong coupling of a transverse magnetic mode in the electron sheath with the expanding resistive plasma layer

Insulating characteristics of polyvinyl alcohol for integrated electronics

International Nuclear Information System (INIS)

Van Etten, Eliana A.; Ximenes, Eder S.; Tarasconi, Lucas T.; Garcia, Irene T.S.; Forte, Maria M.C.; Boudinov, Henri

2014-01-01

The aim of this work is to evaluate the effects of molecular weight, hydrolysis degree, and cross-link on the performance of Polyvinyl Alcohol (PVA) when applied as dielectric material in organic field effect transistors. For this purpose, metal–insulator-structures and polymeric films were characterized. The polymer structure was analyzed by thermogravimetry and calorimetry, and the electrical characterization of the films was performed through current–voltage and capacitance–voltage curves; and dielectric spectrometry. Cross-linkage, followed by hydrolysis degree, presented the major impact on polymer properties, due to the strong influence on chain mobility. The chain mobility increases the dielectric response and decreases the insulation capacity, generating the need to compromise between these two properties. The largest drawback encountered was the high sensitivity of the films to ambient humidity. The best performance of the organic insulator was obtained from cross-linked films made of an incompletely hydrolyzed PVA. - Highlights: • Effect of molecular weight, hydrolysis and cross-link on polyvinyl alcohol (PVA) dielectric • Cross-linkage, followed by hydrolysis, showed the major impact on properties. • Cross-linkage followed by hydrolysis showed the strongest effect on chain mobility. • Best dielectric performance: cross-linked films made of incompletely hydrolyzed PVA • Largest drawback is the high sensitivity of the films to ambient humidity

Capacitance variation induced by microfluidic two-phase flow across insulated interdigital electrodes in lab-on-chip devices.

Science.gov (United States)

Dong, Tao; Barbosa, Cátia

2015-01-26

Microfluidic two-phase flow detection has attracted plenty of interest in various areas of biology, medicine and chemistry. This work presents a capacitive sensor using insulated interdigital electrodes (IDEs) to detect the presence of droplets in a microchannel. This droplet sensor is composed of a glass substrate, patterned gold electrodes and an insulation layer. A polydimethylsiloxane (PDMS) cover bonded to the multilayered structure forms a microchannel. Capacitance variation induced by the droplet passage was thoroughly investigated with both simulation and experimental work. Olive oil and deionized water were employed as the working fluids in the experiments to demonstrate the droplet sensor. The results show a good sensitivity of the droplet with the appropriate measurement connection. This capacitive droplet sensor is promising to be integrated into a lab-on-chip device for in situ monitoring/counting of droplets or bubbles.

Electronic tunneling through a potential barrier on the surface of a topological insulator

Science.gov (United States)

Zhou, Benliang; Zhou, Benhu; Zhou, Guanghui

2016-12-01

We investigate the tunneling transport for electrons on the surface of a topological insulator (TI) through an electrostatic potential barrier. By using the Dirac equation with the continuity conditions for all segments of wave functions at the interfaces between regions inside and outside the barrier, we calculate analytically the transmission probability and conductance for the system. It is demonstrated that, the Klein paradox can also been observed in the system same as in graphene system. Interestingly, the conductance reaches the minimum value when the incident electron energy is equal to the barrier strength. Moreover, with increasing barrier width, the conductance turns up some tunneling oscillation peaks, and larger barrier strength can cause lower conductance, shorter period but larger oscillation amplitude. The oscillation amplitude decreases as the barrier width increases, which is similar as that of the system consisting of the compressive uniaxial strain applied on a TI, but somewhat different from that of graphene system where the oscillation amplitude is a constant. The findings here imply that an electrostatic barrier can greatly influence the electron tunneling transport of the system, and may provide a new way to realize directional filtering of electrons.

Millimeter-Gap Magnetically Insulated Transmission Line Power Flow Experiments

Energy Technology Data Exchange (ETDEWEB)

Hutsel, Brian Thomas [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Stoltzfus, Brian S. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Fowler, William E. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); LeChien, Keith R. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Mazarakis, Michael G. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Moore, James K. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Mulville, Thomas D. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Savage, Mark E. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Stygar, William A. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); McKenney, John L. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Jones, Peter A. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); MacRunnels, Diego J. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Long, Finis W. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Porter, John L. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

2014-09-01

An experiment platform has been designed to study vacuum power flow in magnetically insulated transmission lines (MITLs). The platform was driven by the 400-GW Mykonos-V accelerator. The experiments conducted quantify the current loss in a millimeter-gap MITL with respect to vacuum conditions in the MITL for two different gap distances, 1.0 and 1.3 mm. The current loss for each gap was measured for three different vacuum pump down times. As a ride along experiment, multiple shots were conducted with each set of hardware to determine if there was a conditioning effect to increase current delivery on subsequent shots. The experiment results revealed large differences in performance for the 1.0 and 1.3 mm gaps. The 1.0 mm gap resulted in current loss of 40%-60% of peak current. The 1.3 mm gap resulted in current losses of less than 5% of peak current. Classical MITL models that neglect plasma expansion predict that there should be zero current loss, after magnetic insulation is established, for both of these gaps. The experiments result s indicate that the vacuum pressure or pump down time did not have a significant effect on the measured current loss at vacuum pressures between 1e-4 and 1e-5 Torr. Additionally, there was not repeatable evidence of a conditioning effect that reduced current loss for subsequent full-energy shots on a given set of hardware. It should be noted that the experiments conducted likely did not have large loss contributions due to ion emission from the anode due to the relatively small current densi-ties (25-40 kA/cm) in the MITL that limited the anode temperature rise due to ohmic heating. The results and conclusions from these experiments may have limited applicability to MITLs of high current density (>400 kA/cm) used in the convolute and load region of the Z which experience temperature increases of >400° C and generate ion emission from anode surfaces.

Tetradymites as thermoelectrics and topological insulators

Science.gov (United States)

Heremans, Joseph P.; Cava, Robert J.; Samarth, Nitin

2017-10-01

Tetradymites are M2X3 compounds — in which M is a group V metal, usually Bi or Sb, and X is a group VI anion, Te, Se or S — that crystallize in a rhombohedral structure. Bi2Se3, Bi2Te3 and Sb2Te3 are archetypical tetradymites. Other mixtures of M and X elements produce common variants, such as Bi2Te2Se. Because tetradymites are based on heavy p-block elements, strong spin-orbit coupling greatly influences their electronic properties, both on the surface and in the bulk. Their surface electronic states are a cornerstone of frontier work on topological insulators. The bulk energy bands are characterized by small energy gaps, high group velocities, small effective masses and band inversion near the centre of the Brillouin zone. These properties are favourable for high-efficiency thermoelectric materials but make it difficult to obtain an electrically insulating bulk, which is a requirement of topological insulators. This Review outlines recent progress made in bulk and thin-film tetradymite materials for the optimization of their properties both as thermoelectrics and as topological insulators.

Electron tunneling studies of ultrathin films near the superconductor-to-insulator transition

International Nuclear Information System (INIS)

Valles, J.M. Jr.; Garno, J.P.

1994-01-01

Electron tunneling measurements on ultrathin quench-condensed films near the superconductor-to-insulator (SI) transition reveal that the superconducting state degrades with increasing normal state sheet resistance, R □ , in a manner that depends strongly on film morphology. In homogeneously disordered films, the superconducting energy gap Δ 0 decreases continuously and appears to go to zero at the SI transition. In granular films the transport properties degrade while Δ 0 remains constant. Measurements in the normal state reveal disorder enhanced e - -e - interaction corrections to the density of states. These effects are strong and depend on morphology in a manner that is consistent with their playing an important role in driving the SI transition. (orig.)

Semiconductor of spinons: from Ising band insulator to orthogonal band insulator.

Science.gov (United States)

Farajollahpour, T; Jafari, S A

2018-01-10

We use the ionic Hubbard model to study the effects of strong correlations on a two-dimensional semiconductor. The spectral gap in the limit where on-site interactions are zero is set by the staggered ionic potential, while in the strong interaction limit it is set by the Hubbard U. Combining mean field solutions of the slave spin and slave rotor methods, we propose two interesting gapped phases in between: (i) the insulating phase before the Mott phase can be viewed as gapping a non-Fermi liquid state of spinons by the staggered ionic potential. The quasi-particles of underlying spinons are orthogonal to physical electrons, giving rise to the 'ARPES-dark' state where the ARPES gap will be larger than the optical and thermal gap. (ii) The Ising insulator corresponding to ordered phase of the Ising variable is characterized by single-particle excitations whose dispersion is controlled by Ising-like temperature and field dependences. The temperature can be conveniently employed to drive a phase transition between these two insulating phases where Ising exponents become measurable by ARPES and cyclotron resonance. The rare earth monochalcogenide semiconductors where the magneto-resistance is anomalously large can be a candidate system for the Ising band insulator. We argue that the Ising and orthogonal insulating phases require strong enough ionic potential to survive the downward renormalization of the ionic potential caused by Hubbard U.

Semiconductor of spinons: from Ising band insulator to orthogonal band insulator

Science.gov (United States)

Farajollahpour, T.; Jafari, S. A.

2018-01-01

We use the ionic Hubbard model to study the effects of strong correlations on a two-dimensional semiconductor. The spectral gap in the limit where on-site interactions are zero is set by the staggered ionic potential, while in the strong interaction limit it is set by the Hubbard U. Combining mean field solutions of the slave spin and slave rotor methods, we propose two interesting gapped phases in between: (i) the insulating phase before the Mott phase can be viewed as gapping a non-Fermi liquid state of spinons by the staggered ionic potential. The quasi-particles of underlying spinons are orthogonal to physical electrons, giving rise to the ‘ARPES-dark’ state where the ARPES gap will be larger than the optical and thermal gap. (ii) The Ising insulator corresponding to ordered phase of the Ising variable is characterized by single-particle excitations whose dispersion is controlled by Ising-like temperature and field dependences. The temperature can be conveniently employed to drive a phase transition between these two insulating phases where Ising exponents become measurable by ARPES and cyclotron resonance. The rare earth monochalcogenide semiconductors where the magneto-resistance is anomalously large can be a candidate system for the Ising band insulator. We argue that the Ising and orthogonal insulating phases require strong enough ionic potential to survive the downward renormalization of the ionic potential caused by Hubbard U.

Controlling electron transfer processes on insulating surfaces with the non-contact atomic force microscope.

Science.gov (United States)

Trevethan, Thomas; Shluger, Alexander

2009-07-01

We present the results of theoretical modelling that predicts how a process of transfer of single electrons between two defects on an insulating surface can be induced using a scanning force microscope tip. A model but realistic system is employed which consists of a neutral oxygen vacancy and a noble metal (Pt or Pd) adatom on the MgO(001) surface. We show that the ionization potential of the vacancy and the electron affinity of the metal adatom can be significantly modified by the electric field produced by an ionic tip apex at close approach to the surface. The relative energies of the two states are also a function of the separation of the two defects. Therefore the transfer of an electron from the vacancy to the metal adatom can be induced either by the field effect of the tip or by manipulating the position of the metal adatom on the surface.

Regulation of electron temperature gradient turbulence by zonal flows driven by trapped electron modes

Science.gov (United States)

Asahi, Y.; Ishizawa, A.; Watanabe, T.-H.; Tsutsui, H.; Tsuji-Iio, S.

2014-05-01

Turbulent transport caused by electron temperature gradient (ETG) modes was investigated by means of gyrokinetic simulations. It was found that the ETG turbulence can be regulated by meso-scale zonal flows driven by trapped electron modes (TEMs), which are excited with much smaller growth rates than those of ETG modes. The zonal flows of which radial wavelengths are in between the ion and the electron banana widths are not shielded by trapped ions nor electrons, and hence they are effectively driven by the TEMs. It was also shown that an E × B shearing rate of the TEM-driven zonal flows is larger than or comparable to the growth rates of long-wavelength ETG modes and TEMs, which make a main contribution to the turbulent transport before excitation of the zonal flows.

Reflective Insulation for Energy Conservation in South East Asia

Science.gov (United States)

San Teh, Khar; Yarbrough, David W.; Haw Lim, Chin; Salleh, Elias

2017-05-01

Thermal resistances have been measured for attic spaces insulated with reflective insulations. Three test units located in Malaysia were instrumented to provide heat flux and temperatures for the calculation of time-average RSI-values (RSI is representing R-value in SI units). The RSI for attics with enclosed reflective air spaces were in the range 2-3 m2·K/W while the uninsulated attics averaged about 0.4 m2·K/W. The RSI-values determined in this project were for heat-flow down, the predominant heat-flow direction for attic spaces in Equatorial regions. The observed thermal resistances due to the installation of the reflective insulation results in an 80-90% annual decrease in the heat transfer across the ceiling. This reduces utility usage for air conditioned units and improved comfort for occupants. The research demonstrates the use of transient data for the determination of thermal insulation performance and usefulness of enclosed reflective air spaces for thermal resistance.

Reentrant Metal-Insulator Transitions in Silicon -

Science.gov (United States)

Campbell, John William M.

This thesis describes a study of reentrant metal -insulator transitions observed in the inversion layer of extremely high mobility Si-MOSFETs. Magneto-transport measurements were carried out in the temperature range 20mK-4.2 K in a ^3He/^4 He dilution refrigerator which was surrounded by a 15 Tesla superconducting magnet. Below a melting temperature (T_{M}~500 mK) and a critical electron density (n_{s }~9times10^{10} cm^{-2}), the Shubnikov -de Haas oscillations in the diagonal resistivity enormous maximum values at the half filled Landau levels while maintaining deep minima corresponding to the quantum Hall effect at filled Landau levels. At even lower electron densities the insulating regions began to spread and eventually a metal-insulator transition could be induced at zero magnetic field. The measurement of extremely large resistances in the milliKelvin temperature range required the use of very low currents (typically in the 10^ {-12} A range) and in certain measurements minimizing the noise was also a consideration. The improvements achieved in these areas through the use of shielding, optical decouplers and battery operated instruments are described. The transport signatures of the insulating state are considered in terms of two basic mechanisms: single particle localization with transport by variable range hopping and the formation of a collective state such as a pinned Wigner crystal or electron solid with transport through the motion of bound dislocation pairs. The experimental data is best described by the latter model. Thus the two dimensional electron system in these high mobility Si-MOSFETs provides the first and only experimental demonstration to date of the formation of an electron solid at zero and low magnetic fields in the quantum limit where the Coulomb interaction energy dominates over the zero point oscillation energy. The role of disorder in favouring either single particle localization or the formation of a Wigner crystal is explored by

Flow shear stabilization of hybrid electron-ion drift mode in tokamaks

International Nuclear Information System (INIS)

Bai, L.

1999-01-01

In this paper, a model of sheared flow stabilization on hybrid electron-ion drift mode is proposed. At first, in the presence of dissipative trapped electrons, there exists an intrinsic oscillation mode in tokamak plasmas, namely hybrid dissipative trapped electron-ion temperature gradient mode (hereafter, called as hybrid electron-ion drift mode). This conclusion is in agreement with the observations in the simulated tokamak experiment on the CLM. Then, it is found that the coupling between the sheared flows and dissipative trapped electrons is proposed as the stabilization mechanism of both toroidal sheared flow and poloidal sheared flow on the hybrid electron-ion drift mode, that is, similar to the stabilizing effect of poloidal sheared flow on edge plasmas in tokamaks, in the presence of both dissipative trapped electrons and toroidal sheared flow, large toroidal sheared flow is always a strong stabilizing effect on the hybrid electron-ion drift mode in internal transport barrier location, too. This result is consistent with the experimental observations in JT-60U. (author)

Flow shear stabilization of hybrid electron-ion drift mode in tokamaks

International Nuclear Information System (INIS)

Bai, L.

2001-01-01

In this paper, a model of sheared flow stabilization on hybrid electron-ion drift mode is proposed. At first, in the presence of dissipative trapped electrons, there exists an intrinsic oscillation mode in tokamak plasmas, namely hybrid dissipative trapped electron-ion temperature gradient mode (hereafter, called as hybrid electron-ion drift mode). This conclusion is in agreement with the observations in the simulated tokamak experiment on the CLM. Then, it is found that the coupling between the sheared flows and dissipative trapped electrons is proposed as the stabilization mechanism of both toroidal sheared flow and poloidal sheared flow on the hybrid electron-ion drift mode, that is, similar to the stabilizing effect of poloidal sheared flow on edge plasmas in tokamaks, in the presence of both dissipative trapped electrons and toroidal sheared flow, large toroidal sheared flow is always a strong stabilizing effect on the hybrid electron-ion drift mode in internal transport barrier location, too. This result is consistent with the experimental observations in JT-60U. (author)

Electrode Conduction Processes Segmented Electrode-Insulator Ratio Effects in MHD Power Generation Experiments

Energy Technology Data Exchange (ETDEWEB)

Pain, H. J.; Fearn, D. G.; Distefano, E. [Imperial College. London (United Kingdom)

1966-10-15

(a) Electrode conduction processes have been investigated using a plasma produced in an electromagnetic shock tube operating with argon at 70 {mu}mHg pressure. Complete voltage-current characteristics were obtained by the variation of load and applied voltage. These indicated the existence of two conduction regimes with a complex transition region. In the first regime the current, controlled by ion mobility, rose linearly with voltage to saturate between 10 mA and 1 A depending on conditions. Electrode contamination was significant. The second regime involved large currents controlled by electron mobility and emission from the cathode. The current again increased linearly with voltage and reached 200 A. Observation of induced voltages in transverse magnetic fields and of plasma deceleration in non-uniform fields showed that in the electromagnetic shock tube the plasma was heated predominantly by the driver discharge. Its conductivity was calculated using properties measured by a Langmuir double probe. In both regimes the plasma conductivity was also found from the gradient of the voltage current characteristics using experimental electric field fringing factors and the experimental values were compared with theory. (b) Larger-scale experiments used a combustion-driven shock tube where argon plasma flow, magnetic field and induced current flow were mutually orthogonal. The supersonic flow velocity and thermodynamic parameters of the plasma were accurately known. The electrode channel consisted of a segmented system of 12 electrode pairs with an electrode insulator ratio ranging from 1 to 21, with electrode plus insulator length remaining constant, and with maximum Hall parameter values of unity. Different electrode load combinations (Faraday and Hall generators) have been studied in measuring the power generated and the flow of longitudinal currents between adjacent electrodes. A maximum power of 0,8 MW was obtained, the power output decreasing inversely with the

Electrode Conduction Processes Segmented Electrode-Insulator Ratio Effects in MHD Power Generation Experiments

International Nuclear Information System (INIS)

Pain, H.J.; Fearn, D.G.; Distefano, E.

1966-01-01

(a) Electrode conduction processes have been investigated using a plasma produced in an electromagnetic shock tube operating with argon at 70 μmHg pressure. Complete voltage-current characteristics were obtained by the variation of load and applied voltage. These indicated the existence of two conduction regimes with a complex transition region. In the first regime the current, controlled by ion mobility, rose linearly with voltage to saturate between 10 mA and 1 A depending on conditions. Electrode contamination was significant. The second regime involved large currents controlled by electron mobility and emission from the cathode. The current again increased linearly with voltage and reached 200 A. Observation of induced voltages in transverse magnetic fields and of plasma deceleration in non-uniform fields showed that in the electromagnetic shock tube the plasma was heated predominantly by the driver discharge. Its conductivity was calculated using properties measured by a Langmuir double probe. In both regimes the plasma conductivity was also found from the gradient of the voltage current characteristics using experimental electric field fringing factors and the experimental values were compared with theory. (b) Larger-scale experiments used a combustion-driven shock tube where argon plasma flow, magnetic field and induced current flow were mutually orthogonal. The supersonic flow velocity and thermodynamic parameters of the plasma were accurately known. The electrode channel consisted of a segmented system of 12 electrode pairs with an electrode insulator ratio ranging from 1 to 21, with electrode plus insulator length remaining constant, and with maximum Hall parameter values of unity. Different electrode load combinations (Faraday and Hall generators) have been studied in measuring the power generated and the flow of longitudinal currents between adjacent electrodes. A maximum power of 0,8 MW was obtained, the power output decreasing inversely with the

Electronic properties of InAs-based metal-insulator-semiconductor structures

CERN Document Server

Kuryshev, G L; Valisheva, N A

2001-01-01

The peculiarities of electronic processes in InAs-based MIS structures operating in the charge injection device mode and using as photodetectors in spectral range 2.5-3.05 mu m are investigated. A two-layer system consisting of anodic oxide and low-temperature silicon dioxide is used as an insulator. It is shown that fluoride-containing components that is introduced into the electrolyte decreases the value of the built-in charge and the surface state static density down to minimal measurable values <= 2 x 10 sup 1 sup 0 cm sup - sup 2 eV sup - sup 2. Physical and chemical characteristics of the surface states at the InAs-dielectric interface are discussed on the basis of data on phase composition of anodic oxides obtained by means of X-ray photoelectronic spectroscopy. Anomalous field generation was also observed under the semiconductor non-equilibrium depletion. The processes of tunnel generation and the noise behavior of MIS structures under non-equilibrium depletion are investigated

PIC simulation of the vacuum power flow for a 5 terawatt, 5 MV, 1 MA pulsed power system

Science.gov (United States)

Liu, Laqun; Zou, Wenkang; Liu, Dagang; Guo, Fan; Wang, Huihui; Chen, Lin

2018-03-01

In this paper, a 5 Terawatt, 5 MV, 1 MA pulsed power system based on vacuum magnetic insulation is simulated by the particle-in-cell (PIC) simulation method. The system consists of 50 100-kV linear transformer drive (LTD) cavities in series, using magnetically insulated induction voltage adder (MIVA) technology for pulsed power addition and transmission. The pulsed power formation and the vacuum power flow are simulated when the system works in self-limited flow and load-limited flow. When the pulsed power system isn't connected to the load, the downstream magnetically insulated transmission line (MITL) works in the self-limited flow, the maximum of output current is 1.14 MA and the amplitude of voltage is 4.63 MV. The ratio of the electron current to the total current is 67.5%, when the output current reached the peak value. When the impedance of the load is 3.0 Ω, the downstream MITL works in the self-limited flow, the maximums of output current and the amplitude of voltage are 1.28 MA and 3.96 MV, and the ratio of the electron current to the total current is 11.7% when the output current reached the peak value. In addition, when the switches are triggered in synchronism with the passage of the pulse power flow, it effectively reduces the rise time of the pulse current.

Facility for endurance tests of thermal insulations

International Nuclear Information System (INIS)

Mauersberger, R.

1984-01-01

In the following report the design and construction of an experimental facility for endurance tests of thermal insulations is presented. It's name in abbreviation is 'ADI' standing for the German words A nlage zum Dauertest von Isolierungen . This test facility was build by HRB in order to investigate the performance of thermal insulation systems of hot gas ducts for the process heat-reactor-project. The tests are intended to simulate the conditions of reactor operation. They include short-time experiments for selection of insulation-concepts and in a second step long-time experiments as performance tests. During these tests are measured the effective heat conductivity the local heat losses the temperature profiles of the insulation, of the fixing elements and along the wall of the duct. The design-data required to perform all these tasks are shown in the first picture: The gas-atmosphere must be Helium in tests like in reactor with regard to the special thermal and hydraulic properties of Helium and to the influence of Helium on mechanic friction and wear. The hot gas temperature in the PNP-reactor will be 950 deg. C and should be equal in the experiments. The temperature on the cold side of the insulation has to be adjustable from 50 deg. C up to 300 deg. C. The Helium pressure in the hot gas ducts of a HTR-plant is about 42 bar. The ADI was laid out for 70 bar to cover the hole range of interest. A Helium mass flow has to stream through the insulated test duct in order to realize equal temperatures on the hot side of the insulation. A flow rate of 4,5 kg/s is sufficient for this requirement. The axial pressure gradient along the insulation must be the same as in the reactor, because this has an essential influence on the heat losses. This pressure gradient is about 40 Pa/m

Preliminary Assessment of the Flow of Used Electronics, In ...

Science.gov (United States)

Electronic waste (e-waste) is the largest growing municipal waste stream in the United States. The improper disposal of e-waste has environmental, economic, and social impacts, thus there is a need for sustainable stewardship of electronics. EPA/ORD has been working to improve our understanding of the quantity and flow of electronic devices from initial purchase to final disposition. Understanding the pathways of used electronics from the consumer to their final disposition would provide insight to decision makers about their impacts and support efforts to encourage improvements in policy, technology, and beneficial use. This report is the first stage of study of EPA/ORD's efforts to understand the flows of used electronics and e-waste by reviewing the regulatory programs for the selected states and identifying the key lessons learned and best practices that have emerged since their inception. Additionally, a proof-of-concept e-waste flow model has been developed to provide estimates of the quantity of e-waste generated annually at the national level, as well as for selected states. This report documents a preliminary assessment of available data and development of the model that can be used as a starting point to estimate domestic flows of used electronics from generation, to collection and reuse, to final disposition. The electronics waste flow model can estimate the amount of electronic products entering the EOL management phase based on unit sales dat

Effects of ionizing radiation of electrical properites of refractory insulators

International Nuclear Information System (INIS)

van Lint, V.A.J.; Bunch, J.M.

1975-01-01

The Los Alamos Reference Theta Pinch Reactor (RTPR) requires on the first wall an electrical insulator which will withstand transient high voltage at high temperature 10 sec after severe neutron and ionizing irradiation. Few measurements of electrical parameters for heavily disordered refractory insulators have been reported; estimates are made as to whether breakdown strength or conductivity will be degraded by the irradiation. The approach treats separately short-term ionization effects (free and trapped electrons and holes) and long-term gross damage effects (transmutation products and various lattice defects). The following processes could produce unacceptable conduction across the first wall insulator: (a) delayed electronic conductivity 10 sec after the prompt ionization by bremsstrahlung; (b) prompt electronic conductivity from delayed ionization; (c) electronic breakdown; (d) electronic or ionic conductivity due to thermal motion in the disordered material, possibly leading to thermal breakdown. Worst-case calculations based on lower limits to recombination coefficients limit process (a) to sigma much less than 5 x 10 -14 mho/cm. Data on ionization-induced conductivity in insulators predict for process (b) sigma much less than 10 -8 mho/cm. Electronic breakdown generally occurs at fields well above the 10 5 V/cm required for RTPR. Thermal breakdown is negligible due to the short voltage pulse. Ionic and electronic conduction must be studied theoretically and experimentally in the type of highly disordered materials that result from neutron irradiation of the first wall

Hot-Electron Bolometer Mixers on Silicon-on-Insulator Substrates for Terahertz Frequencies

Science.gov (United States)

Skalare, Anders; Stern, Jeffrey; Bumble, Bruce; Maiwald, Frank

2005-01-01

A terahertz Hot-Electron Bolometer (HEB) mixer design using device substrates based on Silicon-On-Insulator (SOI) technology is described. This substrate technology allows very thin chips (6 pm) with almost arbitrary shape to be manufactured, so that they can be tightly fitted into a waveguide structure and operated at very high frequencies with only low risk for power leakages and resonance modes. The NbTiN-based bolometers are contacted by gold beam-leads, while other beamleads are used to hold the chip in place in the waveguide test fixture. The initial tests yielded an equivalent receiver noise temperature of 3460 K double-sideband at a local oscillator frequency of 1.462 THz and an intermediate frequency of 1.4 GHz.

Super-insulation

International Nuclear Information System (INIS)

Gerold, J.

1985-01-01

The invention concerns super-insulation, which also acts as spacing between two pressurized surfaces, where the crossing bars in at least two layers are provided, with interposed foil. The super-insulation is designed so that it can take compression forces and limits thermal radiation and thermal conduction sufficiently, where the total density of heat flow is usually limited to a few watts per m 2 . The solution to the problem is characterized by the fact that the bars per layer are parallel and from layer to layer they are at an angle to each other and the crossover positions of the bars of different layers are at fixed places and so form contact columns. The basic idea is that bars crossing over each other to support compression forces are used so that contact columns are formed, which are compressed to a certain extent by the load. (orig./PW) [de

Focused ion beam (FIB) milling of electrically insulating specimens using simultaneous primary electron and ion beam irradiation

International Nuclear Information System (INIS)

Stokes, D J; Vystavel, T; Morrissey, F

2007-01-01

There is currently great interest in combining focused ion beam (FIB) and scanning electron microscopy technologies for advanced studies of polymeric materials and biological microstructures, as well as for sophisticated nanoscale fabrication and prototyping. Irradiation of electrically insulating materials with a positive ion beam in high vacuum can lead to the accumulation of charge, causing deflection of the ion beam. The resultant image drift has significant consequences upon the accuracy and quality of FIB milling, imaging and chemical vapour deposition. A method is described for suppressing ion beam drift using a defocused, low-energy primary electron beam, leading to the derivation of a mathematical expression to correlate the ion and electron beam energies and currents with other parameters required for electrically stabilizing these challenging materials

Process for manufacture of Te microwire in glass insulation

International Nuclear Information System (INIS)

Bodiul, Pavel; Nicolaeva, Alibina; Konopko, Leonid; Bondarciuc, Nicolae

2010-01-01

The invention relates to the manufacturing of microwires in glass insulation and can be used in electronics and in the manufacturing of thermoelectrodes for thermoelectric sensors. The process for manufacture of Te microwire in glass insulation consists in softening the Te sample and its pulling in glass insulation. Near the microwire pulling zone through the furnace is maintained a temperature of 430-440 degrees Celsius, which causes the solidification firstly of Te microwire, and then of glass insulation. The result of the invention is to obtain Te microwires in glass insulation of high quality with a diameter of 50-100 μm and a length of 3-15 cm.

High-Resolution Faraday Rotation and Electron-Phonon Coupling in Surface States of the Bulk-Insulating Topological Insulator Cu_{0.02}Bi_{2}Se_{3}.

Science.gov (United States)

Wu, Liang; Tse, Wang-Kong; Brahlek, M; Morris, C M; Aguilar, R Valdés; Koirala, N; Oh, S; Armitage, N P

2015-11-20

We have utilized time-domain magnetoterahertz spectroscopy to investigate the low-frequency optical response of the topological insulator Cu_{0.02}Bi_{2}Se_{3} and Bi_{2}Se_{3} films. With both field and frequency dependence, such experiments give sufficient information to measure the mobility and carrier density of multiple conduction channels simultaneously. We observe sharp cyclotron resonances (CRs) in both materials. The small amount of Cu incorporated into the Cu_{0.02}Bi_{2}Se_{3} induces a true bulk insulator with only a single type of conduction with a total sheet carrier density of ~4.9×10^{12}/cm^{2} and mobility as high as 4000 cm^{2}/V·s. This is consistent with conduction from two virtually identical topological surface states (TSSs) on the top and bottom of the film with a chemical potential ~145 meV above the Dirac point and in the bulk gap. The CR broadens at high fields, an effect that we attribute to an electron-phonon interaction. This assignment is supported by an extended Drude model analysis of the zero-field Drude conductance. In contrast, in normal Bi_{2}Se_{3} films, two conduction channels were observed, and we developed a self-consistent analysis method to distinguish the dominant TSSs and coexisting trivial bulk or two-dimensional electron gas states. Our high-resolution Faraday rotation spectroscopy on Cu_{0.02}Bi_{2}Se_{3} paves the way for the observation of quantized Faraday rotation under experimentally achievable conditions to push the chemical potential in the lowest Landau level.

By-pass flows and temperature distribution in a hot gas duct internally insulated by carbon stone

International Nuclear Information System (INIS)

Konuk, A.A.

1979-01-01

A mathematical model has been developed to calculate by-pass flows and temperature distribution in a hot gas duct internally insulated by carbon stone rings. The equations of conservation of mass and momentum are solved for a piping system to obtain axial and radial by-pass velocities. The energy equation is solved next by a marching method to obtain the radial temperature distribution along the duct. The results, although qualitative due to simplifications in the model, are useful to study the effects of duct geometry on its performance. (Author) [pt

Ionization by ion impact at grazing incidence on insulator surface

CERN Document Server

Martiarena, M L

2003-01-01

We have calculated the energy distribution of electrons produced by ionization of the ionic crystal electrons in grazing fast ion-insulator surface collision. The ionized electrons originate in the 2p F sup - orbital. We observe that the binary peak appears as a double change in the slope of the spectra, in the high energy region. The form of the peak is determined by the initial electron distribution and its position will be affected by the binding energy of the 2p F sup - electron in the crystal. This BEP in insulator surfaces will appear slightly shifted to the low energy side with respect the ion-atom one.

The effects of imperfect insulator coatings on MHD and heat transfer in rectangular duct

International Nuclear Information System (INIS)

Ying, A.Y.; Gaizer, A.A.

1994-01-01

In self cooled liquid metal blankets, the use of an insulator coating to reduce the flow of the eddy current to the structure leads to a significant reduction in MHD pressure drop. Furthermore, this insulating layer alters the velocity structure by reducing the potential difference between the side wall and boundary layer. The questions which arise are: (1) How the imperfections in the insulator coating affect the velocity profiles and their consequent impacts on heat transfer performance?; and, (2) How much crack can lead to an unacceptable MHD pressure drop? The dynamics of the crack healing in an insulator coating duct is one of the important subjects requiring study. The purpose of this work is to present numerical simulations of fully developed MHD flow and developing heat transfer characteristics in imperfectly insulated ducts, and to quantify the influences of crack locations, sizes and resistivities on 2-D MHD pressure drops. Comparisons of finite element solutions of pressure drops in partially insulated ducts with analytical solutions obtained from a circuit analogy show excellent agreement. In addition, the remarkable side layer velocity profile observed in a laminar MHD flow of a conducting duct gradually diminishes as the resistance of the insulating layer increases. The average side wall Nusselt number drops by a factor of 2 as the duct becomes fully insulated

Development and preliminary experimental study on micro-stacked insulator

International Nuclear Information System (INIS)

Ren Chengyan; Yuan Weiqun; Zhang Dongdong; Yan Ping; Wang Jue

2009-01-01

High gradient insulating technology is one of the key technologies in new type dielectric wall accelerator(DWA). High gradient insulator, namely micro-stacked insulator, was developed and preliminary experimental study was done. Based on the finite element and particle simulating method, surface electric field distribution and electron movement track of micro-stacked insulator were numerated, and then the optimized design proposal was put forward. Using high temperature laminated method, we developed micro-stacked insulator samples which uses exhaustive fluorinated ethylene propylene(FEP) as dielectric layer and stainless steel as metal layer. Preliminary experiment of vacuum surface flashover in nanosecond pulse voltage was done and micro-stacked insulator exhibited favorable vacuum surface flashover performance with flashover field strength of near 180 kV/cm. (authors)

Aharonov–Bohm interference in topological insulator nanoribbons

KAUST Repository

Peng, Hailin

2009-12-13

Topological insulators represent unusual phases of quantum matter with an insulating bulk gap and gapless edges or surface states. The two-dimensional topological insulator phase was predicted in HgTe quantum wells and confirmed by transport measurements. Recently, Bi2 Se3 and related materials have been proposed as three-dimensional topological insulators with a single Dirac cone on the surface, protected by time-reversal symmetry. The topological surface states have been observed by angle-resolved photoemission spectroscopy experiments. However, few transport measurements in this context have been reported, presumably owing to the predominance of bulk carriers from crystal defects or thermal excitations. Here we show unambiguous transport evidence of topological surface states through periodic quantum interference effects in layered single-crystalline Bi2 Se3 nanoribbons, which have larger surface-to-volume ratios than bulk materials and can therefore manifest surface effects. Pronounced Aharonov-Bohm oscillations in the magnetoresistance clearly demonstrate the coherent propagation of two-dimensional electrons around the perimeter of the nanoribbon surface, as expected from the topological nature of the surface states. The dominance of the primary h/e oscillation, where h is Plancks constant and e is the electron charge, and its temperature dependence demonstrate the robustness of these states. Our results suggest that topological insulator nanoribbons afford promising materials for future spintronic devices at room temperature.

Sprayable Aerogel Bead Compositions With High Shear Flow Resistance and High Thermal Insulation Value

Science.gov (United States)

Ou, Danny; Trifu, Roxana; Caggiano, Gregory

2013-01-01

A sprayable aerogel insulation has been developed that has good mechanical integrity and lower thermal conductivity than incumbent polyurethane spray-on foam insulation, at similar or lower areal densities, to prevent insulation cracking and debonding in an effort to eliminate the generation of inflight debris. This new, lightweight aerogel under bead form can be used as insulation in various thermal management systems that require low mass and volume, such as cryogenic storage tanks, pipelines, space platforms, and launch vehicles.

Three-dimensional fractional topological insulators in coupled Rashba layers

Science.gov (United States)

Volpez, Yanick; Loss, Daniel; Klinovaja, Jelena

2017-08-01

We propose a model of three-dimensional topological insulators consisting of weakly coupled electron- and hole-gas layers with Rashba spin-orbit interaction stacked along a given axis. We show that in the presence of strong electron-electron interactions the system realizes a fractional strong topological insulator, where the rotational symmetry and condensation energy arguments still allow us to treat the problem as quasi-one-dimensional with bosonization techniques. We also show that if Rashba and Dresselhaus spin-orbit interaction terms are equally strong, by doping the system with magnetic impurities, one can bring it into the Weyl semimetal phase.

Optical transitions in two-dimensional topological insulators with point defects

Science.gov (United States)

Sablikov, Vladimir A.; Sukhanov, Aleksei A.

2016-12-01

Nontrivial properties of electronic states in topological insulators are inherent not only to the surface and boundary states, but to bound states localized at structure defects as well. We clarify how the unusual properties of the defect-induced bound states are manifested in optical absorption spectra in two-dimensional topological insulators. The calculations are carried out for defects with short-range potential. We find that the defects give rise to the appearance of specific features in the absorption spectrum, which are an inherent property of topological insulators. They have the form of two or three absorption peaks that are due to intracenter transitions between electron-like and hole-like bound states.

21 CFR 880.2420 - Electronic monitor for gravity flow infusion systems.

Science.gov (United States)

2010-04-01

... and Personal Use Monitoring Devices § 880.2420 Electronic monitor for gravity flow infusion systems. (a) Identification. An electronic monitor for gravity flow infusion systems is a device used to... 21 Food and Drugs 8 2010-04-01 2010-04-01 false Electronic monitor for gravity flow infusion...

Experimental demonstration of anomalous Floquet topological insulator for sound

Science.gov (United States)

Peng, Yu-Gui; Qin, Cheng-Zhi; Zhao, De-Gang; Shen, Ya-Xi; Xu, Xiang-Yuan; Bao, Ming; Jia, Han; Zhu, Xue-Feng

2016-11-01

Time-reversal invariant topological insulator is widely recognized as one of the fundamental discoveries in condensed matter physics, for which the most fascinating hallmark is perhaps a spin-based topological protection, the absence of scattering of conduction electrons with certain spins on matter surface. Recently, it has created a paradigm shift for topological insulators, from electronics to photonics, phononics and mechanics as well, bringing about not only involved new physics but also potential applications in robust wave transport. Despite the growing interests in topologically protected acoustic wave transport, T-invariant acoustic topological insulator has not yet been achieved. Here we report experimental demonstration of anomalous Floquet topological insulator for sound: a strongly coupled metamaterial ring lattice that supports one-way propagation of pseudo-spin-dependent edge states under T-symmetry. We also demonstrate the formation of pseudo-spin-dependent interface states due to lattice dislocations and investigate the properties of pass band and band gap states.

The synthesis method for design of electron flow sources

Science.gov (United States)

Alexahin, Yu I.; Molodozhenzev, A. Yu

1997-01-01

The synthesis method to design a relativistic magnetically - focused beam source is described in this paper. It allows to find a shape of electrodes necessary to produce laminar space charge flows. Electron guns with shielded cathodes designed with this method were analyzed using the EGUN code. The obtained results have shown the coincidence of the synthesis and analysis calculations [1]. This method of electron gun calculation may be applied for immersed electron flows - of interest for the EBIS electron gun design.

Insulating Foams Save Money, Increase Safety

Science.gov (United States)

2009-01-01

Scientists at Langley Research Center created polyimide foam insulation for reusable cryogenic propellant tanks on the space shuttle. Meanwhile, a small Hialeah, Florida-based business, PolyuMAC Inc., was looking for advanced foams to use in the customized manufacturing of acoustical and thermal insulation. The company contacted NASA, licensed the material, and then the original inventors worked with the company's engineers to make a new material that was better for both parties. The new version, a high performance, flame retardant, flexible polyimide foam, is used for insulating NASA cryogenic propellant tanks and shows promise for use on watercraft, aircraft, spacecraft, electronics and electrical products, automobiles and automotive products, recreation equipment, and building and construction materials.

Step tunneling enhanced asymmetry in metal-insulator-insulator-metal (MIIM) diodes for rectenna applications

Science.gov (United States)

Alimardani, N.; Conley, J. F.

2013-09-01

We combine nanolaminate bilayer insulator tunnel barriers (Al2O3/HfO2, HfO2/Al2O3, Al2O3/ZrO2) deposited via atomic layer deposition (ALD) with asymmetric work function metal electrodes to produce MIIM diodes with enhanced I-V asymmetry and non-linearity. We show that the improvements in MIIM devices are due to step tunneling rather than resonant tunneling. We also investigate conduction processes as a function of temperature in MIM devices with Nb2O5 and Ta2O5 high electron affinity insulators. For both Nb2O5 and Ta2O5 insulators, the dominant conduction process is established as Schottky emission at small biases and Frenkel-Poole emission at large biases. The energy depth of the traps that dominate Frenkel-Poole emission in each material are estimated.

Spin-transfer torque generated by a topological insulator

KAUST Repository

Mellnik, A. R.

2014-07-23

Magnetic devices are a leading contender for the implementation of memory and logic technologies that are non-volatile, that can scale to high density and high speed, and that do not wear out. However, widespread application of magnetic memory and logic devices will require the development of efficient mechanisms for reorienting their magnetization using the least possible current and power. There has been considerable recent progress in this effort; in particular, it has been discovered that spin-orbit interactions in heavy-metal/ferromagnet bilayers can produce strong current-driven torques on the magnetic layer, via the spin Hall effect in the heavy metal or the Rashba-Edelstein effect in the ferromagnet. In the search for materials to provide even more efficient spin-orbit-induced torques, some proposals have suggested topological insulators, which possess a surface state in which the effects of spin-orbit coupling are maximal in the sense that an electron\\' s spin orientation is fixed relative to its propagation direction. Here we report experiments showing that charge current flowing in-plane in a thin film of the topological insulator bismuth selenide (Bi2Se3) at room temperature can indeed exert a strong spin-transfer torque on an adjacent ferromagnetic permalloy (Ni81Fe19) thin film, with a direction consistent with that expected from the topological surface state. We find that the strength of the torque per unit charge current density in Bi 2Se3 is greater than for any source of spin-transfer torque measured so far, even for non-ideal topological insulator films in which the surface states coexist with bulk conduction. Our data suggest that topological insulators could enable very efficient electrical manipulation of magnetic materials at room temperature, for memory and logic applications. © 2014 Macmillan Publishers Limited. All rights reserved.

Structurally triggered metal-insulator transition in rare-earth nickelates.

Science.gov (United States)

Mercy, Alain; Bieder, Jordan; Íñiguez, Jorge; Ghosez, Philippe

2017-11-22

Rare-earth nickelates form an intriguing series of correlated perovskite oxides. Apart from LaNiO 3 , they exhibit on cooling a sharp metal-insulator electronic phase transition, a concurrent structural phase transition, and a magnetic phase transition toward an unusual antiferromagnetic spin order. Appealing for various applications, full exploitation of these compounds is still hampered by the lack of global understanding of the interplay between their electronic, structural, and magnetic properties. Here we show from first-principles calculations that the metal-insulator transition of nickelates arises from the softening of an oxygen-breathing distortion, structurally triggered by oxygen-octahedra rotation motions. The origin of such a rare triggered mechanism is traced back in their electronic and magnetic properties, providing a united picture. We further develop a Landau model accounting for the metal-insulator transition evolution in terms of the rare-earth cations and rationalizing how to tune this transition by acting on oxygen rotation motions.

Metal-insulator transition in vanadium dioxide

International Nuclear Information System (INIS)

Zylbersztejn, A.; Mott, N.F.

1975-01-01

The basic physical parameters which govern the metal-insulator transition in vanadium dioxide are determined through a review of the properties of this material. The major importance of the Hubbard intra-atomic correlation energy in determining the insulating phase, which was already evidence by studies of the magnetic properties of V 1 -/subx/Cr/subx/O 2 alloys, is further demonstrated from an analysis of their electrical properties. An analysis of the magnetic susceptibility of niobium-doped VO 2 yields a picture for the current carrier in the low-temperature phase in which it is accompanied by a spin cloud (owing to Hund's-rule coupling), and has therefore an enhanced mass (m approx. = 60m 0 ). Semiconducting vanadium dioxide turns out to be a borderline case for a classical band-transport description; in the alloys at high doping levels, Anderson localization with hopping transport can take place. Whereas it is shown that the insulating phase cannot be described correctly without taking into account the Hubbard correlation energy, we find that the properties of the metallic phase are mainly determined by the band structure. Metallic VO 2 is, in our view, similar to transition metals like Pt or Pd: electrons in a comparatively wide band screening out the interaction between the electrons in a narrow overlapping band. The magnetic susceptibility is described as exchange enhanced. The large density of states at the Fermi level yields a substantial contribution of the entropy of the metallic electrons to the latent heat. The crystalline distortion removes the band degeneracy so that the correlation energy becomes comparable with the band width and a metal-insulator transition takes place

Effects of insulating vanadium oxide composite in concomitant mixed phases via interface barrier modulations on the performance improvements in metal-insulator-metal diodes

Directory of Open Access Journals (Sweden)

Kaleem Abbas

2018-03-01

Full Text Available The performance of metal-insulator-metal diodes is investigated for insulating vanadium oxide (VOx composite composed of concomitant mixed phases using the Pt metal as the top and the bottom electrodes. Insulating VOx composite in the Pt/VOx/Pt diode exhibits a high asymmetry of 10 and a very high sensitivity of 2,135V−1 at 0.6 V. The VOx composite provides Schottky-like barriers at the interface, which controls the current flow and the trap-assisted conduction mechanism. Such dramatic enhancement in asymmetry and rectification performance at low applied bias may be ascribed to the dynamic control of the insulating and metallic phases in VOx composites. We find that the nanostructure details of the insulating VOx layer can be critical in enhancing the performance of MIM diodes.

Numerical simulation of double-diffusive mixed convective flow in rectangular enclosure with insulated moving lid

Energy Technology Data Exchange (ETDEWEB)

Teamah, M.A. [Faculty of Engineering, Alexandria University, Mech. Eng. Dept, Alexandria (Egypt); El-Maghlany, W.M. [Faculty of Engineering, Suez Canal University, Ismailia (Egypt)

2010-09-15

The present study is concerned with the mixed convection in a rectangular lid-driven cavity under the combined buoyancy effects of thermal and mass diffusion. Double-diffusive convective flow in a rectangular enclosure with moving upper surface is studied numerically. Both upper and lower surfaces are being insulated and impermeable. Constant different temperatures and concentration are imposed along the vertical walls of the enclosure, steady state laminar regime is considered. The transport equations for continuity, momentum, energy and spices transfer are solved. The numerical results are reported for the effect of Richardson number, Lewis number, and buoyancy ratio on the iso-contours of stream line, temperature, and concentration. In addition, the predicted results for both local and average Nusselt and Sherwood numbers are presented and discussed for various parametric conditions. This study was done for 0.1 <= Le <= 50 and Prandtl number Pr = 0.7. Through out the study the Grashof number and aspect ratio are kept constant at 10{sup 4} and 2 respectively and -10 <= N <= 10, while Richardson number has been varied from 0.01 to 10 to simulate forced convection dominated flow, mixed convection and natural convection dominated flow. (authors)

Electronic correlations in insulators, metals and superconductors

Energy Technology Data Exchange (ETDEWEB)

Sentef, Michael Andreas

2010-12-03

In this thesis dynamical mean-field methods in combination with a continuous-time quantum Monte Carlo impurity solver are used to study selected open problems of condensed matter theory. These problems comprise the effect of correlations and their quantification in covalent band insulators, non-local correlation effects and their intriguing consequences in frustrated two-dimensional systems, and a phenomenological approach to investigate temperature-dependent transport in graphene in the presence of disorder. (orig.)

Electronic correlations in insulators, metals and superconductors

International Nuclear Information System (INIS)

Sentef, Michael Andreas

2010-01-01

In this thesis dynamical mean-field methods in combination with a continuous-time quantum Monte Carlo impurity solver are used to study selected open problems of condensed matter theory. These problems comprise the effect of correlations and their quantification in covalent band insulators, non-local correlation effects and their intriguing consequences in frustrated two-dimensional systems, and a phenomenological approach to investigate temperature-dependent transport in graphene in the presence of disorder. (orig.)

Thermal transport across metal–insulator interface via electron–phonon interaction

International Nuclear Information System (INIS)

Zhang, Lifa; Wang, Jian-Sheng; Li, Baowen; Lü, Jing-Tao

2013-01-01

The thermal transport across a metal–insulator interface can be characterized by electron–phonon interaction through which an electron lead is coupled to a phonon lead if phonon–phonon coupling at the interface is very weak. We investigate the thermal conductance and rectification between the electron part and the phonon part using the nonequilibrium Green’s function method. It is found that the thermal conductance has a nonmonotonic behavior as a function of average temperature or the coupling strength between the phonon leads in the metal part and the insulator part. The metal–insulator interface shows a clear thermal rectification effect, which can be reversed by a change in average temperature or the electron–phonon coupling. (paper)

Mott metal-insulator transition in the doped Hubbard-Holstein model

Science.gov (United States)

Kurdestany, Jamshid Moradi; Satpathy, S.

2017-08-01

Motivated by the current interest in the understanding of the Mott insulators away from half-filling, observed in many perovskite oxides, we study the Mott metal-insulator transition in the doped Hubbard-Holstein model using the Hartree-Fock mean field theory. The Hubbard-Holstein model is the simplest model containing both the Coulomb and the electron-lattice interactions, which are important ingredients in the physics of the perovskite oxides. In contrast to the half-filled Hubbard model, which always results in a single phase (either metallic or insulating), our results show that away from half-filling, a mixed phase of metallic and insulating regions occurs. As the dopant concentration is increased, the metallic part progressively grows in volume, until it exceeds the percolation threshold, leading to percolative conduction. This happens above a critical dopant concentration δc, which, depending on the strength of the electron-lattice interaction, can be a significant fraction of unity. This means that the material could be insulating even for a substantial amount of doping, in contrast to the expectation that doped holes would destroy the insulating behavior of the half-filled Hubbard model. While effects of fluctuation beyond the mean field remain an open question, our results provide a starting point for the understanding of the density-driven metal-insulator transition observed in many complex oxides.

Proximity effects in topological insulator heterostructures

International Nuclear Information System (INIS)

Li Xiao-Guang; Wu Guang-Fen; Zhang Gu-Feng; Culcer Dimitrie; Zhang Zhen-Yu; Chen Hua

2013-01-01

Topological insulators (TIs) are bulk insulators that possess robust helical conducting states along their interfaces with conventional insulators. A tremendous research effort has recently been devoted to Tl-based heterostructures, in which conventional proximity effects give rise to a series of exotic physical phenomena. This paper reviews our recent studies on the potential existence of topological proximity effects at the interface between a topological insulator and a normal insulator or other topologically trivial systems. Using first-principles approaches, we have realized the tunability of the vertical location of the topological helical state via intriguing dual-proximity effects. To further elucidate the control parameters of this effect, we have used the graphene-based heterostructures as prototypical systems to reveal a more complete phase diagram. On the application side of the topological helical states, we have presented a catalysis example, where the topological helical state plays an essential role in facilitating surface reactions by serving as an effective electron bath. These discoveries lay the foundation for accurate manipulation of the real space properties of the topological helical state in TI-based heterostructures and pave the way for realization of the salient functionality of topological insulators in future device applications. (topical review - low-dimensional nanostructures and devices)

Fermi surfaces in Kondo insulators

Science.gov (United States)

Liu, Hsu; Hartstein, Máté; Wallace, Gregory J.; Davies, Alexander J.; Ciomaga Hatnean, Monica; Johannes, Michelle D.; Shitsevalova, Natalya; Balakrishnan, Geetha; Sebastian, Suchitra E.

2018-04-01

We report magnetic quantum oscillations measured using torque magnetisation in the Kondo insulator YbB12 and discuss the potential origin of the underlying Fermi surface. Observed quantum oscillations as well as complementary quantities such as a finite linear specific heat capacity in YbB12 exhibit similarities with the Kondo insulator SmB6, yet also crucial differences. Small heavy Fermi sections are observed in YbB12 with similarities to the neighbouring heavy fermion semimetallic Fermi surface, in contrast to large light Fermi surface sections in SmB6 which are more similar to the conduction electron Fermi surface. A rich spectrum of theoretical models is suggested to explain the origin across different Kondo insulating families of a bulk Fermi surface potentially from novel itinerant quasiparticles that couple to magnetic fields, yet do not couple to weak DC electric fields.

1D numerical simulation of charge trapping in an insulator submitted to an electron beam irradiation. Part I: Computation of the initial secondary electron emission yield

International Nuclear Information System (INIS)

Aoufi, A.; Damamme, G.

2011-01-01

The aim of this work is to study by numerical simulation a mathematical modelling technique describing charge trapping during initial charge injection in an insulator submitted to electron beam irradiation. A two-fluxes method described by a set of two stationary transport equations is used to split the electron current j e (z) into coupled forward j e+ (z) and backward j e (z) currents and such that j e (z) = j e+ (z) - j e- (z). The sparse algebraic linear system, resulting from the vertex-centered finite-volume discretization scheme is solved by an iterative decoupled fixed point method which involves the direct inversion of a bi-diagonal matrix. The sensitivity of the initial secondary electron emission yield with respect to the energy of incident primary electrons beam, that is penetration depth of the incident beam, or electron cross sections (absorption and diffusion) is investigated by numerical simulations. (authors)

Peculiarities of electronic structure of silicon-on-insulator structures and their interaction with synchrotron radiation

Directory of Open Access Journals (Sweden)

Vladimir A. Terekhov

2015-09-01

Full Text Available SOI (silicon-on-insulator structures with strained and unstrained silicon layers were studied by ultrasoft X-ray emission spectroscopy and X-ray absorption near edge structure spectroscopy with the use of synchrotron radiation techniques. Analysis of X-ray data has shown a noticeable transformation of the electron energy spectrum and local partial density of states distribution in valence and conduction bands in the strained silicon layer of the SOI structure. USXES Si L2,3 spectra analysis revealed a decrease of the distance between the L2v′ и L1v points in the valence band of the strained silicon layer as well as a shift of the first two maxima of the XANES first derivation spectra to the higher energies with respect to conduction band bottom Ec. At the same time the X-ray standing waves of synchrotron radiation (λ~12–20 nm are formed in the silicon-on-insulator structure with and without strains of the silicon layer. Moreover changing the synchrotron radiation grazing angle θ by 2° leads to a change of the electromagnetic field phase to the opposite.

Impurity band Mott insulators: a new route to high Tc superconductivity

Directory of Open Access Journals (Sweden)

Ganapathy Baskaran

2008-01-01

Full Text Available Last century witnessed the birth of semiconductor electronics and nanotechnology. The physics behind these revolutionary developments is certain quantum mechanical behaviour of 'impurity state electrons' in crystalline 'band insulators', such as Si, Ge, GaAs and GaN, arising from intentionally added (doped impurities. The present article proposes that certain collective quantum behaviour of these impurity state electrons, arising from Coulomb repulsions, could lead to superconductivity in a parent band insulator, in a way not suspected before. Impurity band resonating valence bond theory of superconductivity in boron doped diamond, recently proposed by us, suggests possibility of superconductivity emerging from impurity band Mott insulators. We use certain key ideas and insights from the field of high-temperature superconductivity in cuprates and organics. Our suggestion also offers new possibilities in the field of semiconductor electronics and nanotechnology. The current level of sophistication in solid state technology and combinatorial materials science is very well capable of realizing our proposal and discover new superconductors.

Local Peltier-effect-induced reversible metal–insulator transition in VO2 nanowires

International Nuclear Information System (INIS)

Takami, Hidefumi; Kanki, Teruo; Tanaka, Hidekazu

2016-01-01

We report anomalous resistance leaps and drops in VO 2 nanowires with operating current density and direction, showing reversible and nonvolatile switching. This event is associated with the metal–insulator phase transition (MIT) of local nanodomains with coexistence states of metallic and insulating phases induced by thermoelectric cooling and heating effects. Because the interface of metal and insulator domains has much different Peltier coefficient, it is possible that a significant Peltier effect would be a source of the local MIT. This operation can be realized by one-dimensional domain configuration in VO 2 nanowires because one straight current path through the electronic domain-interface enables theoretical control of thermoelectric effects. This result will open a new method of reversible control of electronic states in correlated electron materials.

Creation of excitations and defects in insulating materials by high-current-density electron beams of nanosecond pulse duration

International Nuclear Information System (INIS)

Vaisburd, D.I.; Evdokimov, K.E.

2005-01-01

The paper is concerned with fast and ultra-fast processes in insulating materials under the irradiation by a high-current-density electron beam of a nanosecond pulse duration. The inflation process induced by the interaction of a high-intensity electron beam with a dielectric is examined. The ''instantaneous'' distribution of non-ionizing electrons and holes is one of the most important stages of the process. Ionization-passive electrons and holes make the main contribution to many fast processes with a characteristic time in the range 10 -14 /10 -12 s: high-energy conductivity, intraband luminescence, etc. A technique was developed for calculation of the ''instantaneous'' distribution of non-ionizing electrons and holes in a dielectric prior to electron-phonon relaxation. The following experimental effects are considered: intraband luminescence, coexistence of intraband electron luminescence and band-to-band hole luminescence in CsI, high energy conductivity; generation of mechanical fields and their interaction with cracks and dislocations. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Acoustic excitation of containment insulation cover plate

International Nuclear Information System (INIS)

Fenech, H.; Rao, A.K.

1978-01-01

An experimental and theoretical program has been implemented by NRC-BNL since 1975 at the University of California, Santa Barbara to assess the reliability of the PCRV thermal insulation cover plate and the possible safety problem caused by the failure of this plate. A typical large HTGR PCRV unit [1160 MW(e)] and thermal insulation class A were selected. The upper core cavity is estimated to be the most critical volume where the noise pressure levels are expected to reach 110 to 130 dB (rel. to 2 x 10 -4 dynes/cm 2 ). The noise spectrum in that cavity is a composite of circulator noise, vortex shedding boundary layer turbulence, and flow impingement. Some anticipated safety related problems associated with the thermal insulation failure are examined

Transport and screen blockage characteristics of reflective metallic insulation materials

International Nuclear Information System (INIS)

Brocard, D.N.

1984-01-01

In the event of a LOCA within a nuclear power plant, it is possible for insulation debris to be generated by the break jet. Such debris has the potential for PWR sump screen (or BWR RHR suction inlet) blockage and thus can affect the long-term recirculation capability. In addition to the variables of break jet location and orientation, the types and quantities of debris which could be generated are dependent on the insulation materials employed. This experimental investigation was limited to reflective metallic insulation and components thereof. The study was aimed at determining the flow velocities needed to transport the insulation debris to the sump screens and the resulting modes of screen blockage. The tests revealed that thin metallic foils (0.0025 in. and 0.004 in.) could transport at low flow velocities, 0.2 to 0.5 ft/sec. Thicker foils (0.008 in.) transported at higher velocities, 0.4 to 0.8 ft/sec, and as fabricated half cylinder insulation units required velocities in excess of 1.0 ft/sec for transport. The tests also provided information on screen blockage patterns that showed blockage could occur at the lower portion of the screen as foils readily flipped on the screen when reaching it

A ceramic radial insulation structure for a relativistic electron beam vacuum diode.

Science.gov (United States)

Xun, Tao; Yang, Hanwu; Zhang, Jiande; Liu, Zhenxiang; Wang, Yong; Zhao, Yansong

2008-06-01

For one kind of a high current diode composed of a small disk-type alumina ceramic insulator water/vacuum interface, the insulation structure was designed and experimentally investigated. According to the theories of vacuum flashover and the rules for radial insulators, a "cone-column" anode outline and the cathode shielding rings were adopted. The electrostatic field along the insulator surface was obtained by finite element analysis simulating. By adjusting the outline of the anode and reshaping the shielding rings, the electric fields were well distributed and the field around the cathode triple junction was effectively controlled. Area weighted statistical method was applied to estimate the surface breakdown field. In addition, the operating process of an accelerator based on a spiral pulse forming line (PFL) was simulated through the PSPICE software to get the waveform of charging and diode voltage. The high voltage test was carried out on a water dielectric spiral PFL accelerator with long pulse duration, and results show that the diode can work stably in 420 kV, 200 ns conditions. The experimental results agree with the theoretical and simulated results.

Electronic reconstruction at the interface between the Mott insulator LaVO{sub 3} and the band insulator SrTiO{sub 3}

Energy Technology Data Exchange (ETDEWEB)

Stuebinger, Martin; Gabel, Judith; Gagel, Philipp; Sing, Michael; Claessen, Ralph [Universitaet Wuerzburg, Physikalisches Institut and Roentgen Center for Complex Material Systems (RCCM), 97074 Wuerzburg (Germany)

2016-07-01

Akin to the well known oxide heterostructure LaAlO{sub 3}/SrTiO{sub 3} (LAO/STO) the formation of a conducting interface is found between the strongly correlated, polar Mott insulator LaV{sup 3+}O{sub 3} (LVO) and the non-polar band insulator STO. Since LaV{sup 3+}O{sub 3} tends to overoxidize to the thermodynamically more favourable LaV{sup 5+}O{sub 4} phase when exposed to air, a suitable passivation is required. Therefore, we have employed pulsed laser deposition thin film growth of LVO films with a crystalline LAO capping layer. In situ photoemission measurements of samples before and after being exposed to air show that the V oxidation state can indeed be stabilized by the LAO capping layer. By transport measurements, we identify an insulator-to-metal transition at a combined LAO/LVO overlayer thickness of 4 to 5 unit cells. With LVO being a Mott insulator, passivation by the LAO capping opens the opportunity to study a band-filling controlled Mott insulator to metal transition induced by a purely electrostatic mechanism without interfering overoxidation of the LVO film.

Effects of Structural and Electronic Disorder in Topological Insulator Sb2Te3 Thin Films

Science.gov (United States)

Korzhovska, Inna

Topological quantum matter is a unique and potentially transformative protectorate against disorder-induced backscattering. The ultimate disorder limits to the topological state, however, are still not known - understanding these limits is critical to potential applications in the fields of spintronics and information processing. In topological insulators spin-orbit interaction and time-reversal-symmetry invariance guarantees - at least up to a certain disorder strength - that charge transport through 2D gapless Dirac surface states is robust against backscattering by non-magnetic disorder. Strong disorder may destroy topological protection and gap out Dirac surface states, although recent theories predict that under severe electronic disorder a quantized topological conductance might yet reemerge. Very strong electronic disorder, however, is not trivial to install and quantify, and topological matter under such conditions thus far has not been experimentally tested. This thesis addresses the behavior of three-dimensional (3D) topological insulator (TI) films in a wide range of structural and electronic disorder. We establish strong positional disorder in thin (20-50 nm) Sb2Te 3 films, free of extrinsic magnetic dopants. Sb 2Te3 is a known 2nd generation topological insulator in the low-disorder crystalline state. It is also a known phase-change material that undergoes insulator-to-metal transition with the concurrent orders of magnitude resistive drop, where a huge range of disorder could be controllably explored. In this work we show that even in the absence of magnetic dopants, disorder may induce spin correlations detrimental to the topological state. Chapter 1 contains a brief introduction to the topological matter and describes the role played by disorder. This is followed by theory considerations and a survey of prior experimental work. Next we describe the motivation for our experiments and explain the choice of the material. Chapter 2 describes deposition

Cyclic electron flow is redox-controlled but independent of state transition.

Science.gov (United States)

Takahashi, Hiroko; Clowez, Sophie; Wollman, Francis-André; Vallon, Olivier; Rappaport, Fabrice

2013-01-01

Photosynthesis is the biological process that feeds the biosphere with reduced carbon. The assimilation of CO2 requires the fine tuning of two co-existing functional modes: linear electron flow, which provides NADPH and ATP, and cyclic electron flow, which only sustains ATP synthesis. Although the importance of this fine tuning is appreciated, its mechanism remains equivocal. Here we show that cyclic electron flow as well as formation of supercomplexes, thought to contribute to the enhancement of cyclic electron flow, are promoted in reducing conditions with no correlation with the reorganization of the thylakoid membranes associated with the migration of antenna proteins towards Photosystems I or II, a process known as state transition. We show that cyclic electron flow is tuned by the redox power and this provides a mechanistic model applying to the entire green lineage including the vast majority of the cases in which state transition only involves a moderate fraction of the antenna.

Quantum criticality around metal-insulator transitions of strongly correlated electron systems

Science.gov (United States)

Misawa, Takahiro; Imada, Masatoshi

2007-03-01

Quantum criticality of metal-insulator transitions in correlated electron systems is shown to belong to an unconventional universality class with violation of the Ginzburg-Landau-Wilson (GLW) scheme formulated for symmetry breaking transitions. This unconventionality arises from an emergent character of the quantum critical point, which appears at the marginal point between the Ising-type symmetry breaking at nonzero temperatures and the topological transition of the Fermi surface at zero temperature. We show that Hartree-Fock approximations of an extended Hubbard model on square lattices are capable of such metal-insulator transitions with unusual criticality under a preexisting symmetry breaking. The obtained universality is consistent with the scaling theory formulated for Mott transitions and with a number of numerical results beyond the mean-field level, implying that preexisting symmetry breaking is not necessarily required for the emergence of this unconventional universality. Examinations of fluctuation effects indicate that the obtained critical exponents remain essentially exact beyond the mean-field level. It further clarifies the whole structure of singularities by a unified treatment of the bandwidth-control and filling-control transitions. Detailed analyses of the criticality, containing diverging carrier density fluctuations around the marginal quantum critical point, are presented from microscopic calculations and reveal the nature as quantum critical “opalescence.” The mechanism of emerging marginal quantum critical point is ascribed to a positive feedback and interplay between the preexisting gap formation present even in metals and kinetic energy gain (loss) of the metallic carrier. Analyses of crossovers between GLW type at nonzero temperature and topological type at zero temperature show that the critical exponents observed in (V,Cr)2O3 and κ-ET -type organic conductors provide us with evidence for the existence of the present marginal

Magnetic gating of a 2D topological insulator

Science.gov (United States)

Dang, Xiaoqian; Burton, J. D.; Tsymbal, Evgeny Y.

2016-09-01

Deterministic control of transport properties through manipulation of spin states is one of the paradigms of spintronics. Topological insulators offer a new playground for exploring interesting spin-dependent phenomena. Here, we consider a ferromagnetic ‘gate’ representing a magnetic adatom coupled to the topologically protected edge state of a two-dimensional (2D) topological insulator to modulate the electron transmission of the edge state. Due to the locked spin and wave vector of the transport electrons the transmission across the magnetic gate depends on the mutual orientation of the adatom magnetic moment and the current. If the Fermi energy matches an exchange-split bound state of the adatom, the electron transmission can be blocked due to the full back scattering of the incident wave. This antiresonance behavior is controlled by the adatom magnetic moment orientation so that the transmission of the edge state can be changed from 1 to 0. Expanding this consideration to a ferromagnetic gate representing a 1D chain of atoms shows a possibility to control the spin-dependent current of a strip of a 2D topological insulator by magnetization orientation of the ferromagnetic gate.

An open-structure sound insulator against low-frequency and wide-band acoustic waves

Science.gov (United States)

Chen, Zhe; Fan, Li; Zhang, Shu-yi; Zhang, Hui; Li, Xiao-juan; Ding, Jin

2015-10-01

To block sound, i.e., the vibration of air, most insulators are based on sealed structures and prevent the flow of the air. In this research, an acoustic metamaterial adopting side structures, loops, and labyrinths, arranged along a main tube, is presented. By combining the accurately designed side structures, an extremely wide forbidden band with a low cut-off frequency of 80 Hz is produced, which demonstrates a powerful low-frequency and wide-band sound insulation ability. Moreover, by virtue of the bypass arrangement, the metamaterial is based on an open structure, and thus air flow is allowed while acoustic waves can be insulated.

Launched electrons in plasma opening switches

International Nuclear Information System (INIS)

Mendel, C.W. Jr.; Rochau, G.E.; Sweeney, M.A.; McDaniel, D.H.; Quintenz, J.P.; Savage, M.E.; Lindman, E.L.; Kindel, J.M.

1989-01-01

Plasma opening switches have provided a means to improve the characteristics of super-power pulse generators. Recent advances involving plasma control with fast and slow magnetic fields have made these switches more versatile, allowing for improved switch uniformity, triggering, and opening current levels that are set by the level of auxiliary fields. Such switches necessarily involve breaks in the translational symmetry of the transmission line geometry and therefore affect the electron flow characteristics of the line. These symmetry breaks are the result of high electric field regions caused by plasma conductors remaining in the transmission line, ion beams crossing the line, or auxilliary magnetic field regions. Symmetry breaks cause the canonical momentum of the electrons to change, thereby moving them away from the cathode. Additional electrons are pulled from the cathode into the magnetically insulated flow, resulting in an excess of electron flow over that expected for the voltage and line current downstream of the switch. We call these electrons ''launched electrons''. Unless they are recaptured at the cathode or else are fed into the load and used beneficially, they cause a large power loss downstream. This paper will show examples of SuperMite and PBFA II data showing these losses, explain the tools we are using to study them, and discuss the mechanisms we will employ to mitigate the problem. The losses will be reduced primarily by reducing the amount of launched electron flow. 7 refs., 9 figs

Improved DC Gun Insulator Assembly

International Nuclear Information System (INIS)

Neubauer, M.L.; Dudas, A.; Sah, R.; Poelker, M.; Surles-Law, K.E.L.

2010-01-01

Many user facilities such as synchrotron radiation light sources and free electron lasers require accelerating structures that support electric fields of 10-100 MV/m, especially at the start of the accelerator chain where ceramic insulators are used for very high gradient DC guns. These insulators are difficult to manufacture, require long commissioning times, and often exhibit poor reliability. Two technical approaches to solving this problem will be investigated. Firstly, inverted ceramics offer solutions for reduced gradients between the electrodes and ground. An inverted design will be presented for 350 kV, with maximum gradients in the range of 5-10 MV/m. Secondly, novel ceramic manufacturing processes will be studied, in order to protect triple junction locations from emission, by applying a coating with a bulk resistivity. The processes for creating this coating will be optimized to provide protection as well as be used to coat a ceramic with an appropriate gradient in bulk resistivity from the vacuum side to the air side of an HV standoff ceramic cylinder. Example insulator designs are being computer modelled, and insulator samples are being manufactured and tested

Liquid metal flows in manifolds and expansions of insulating rectangular ducts in the plane perpendicular to a strong magnetic field

International Nuclear Information System (INIS)

Molokov, S.

1994-01-01

It is demonstrated the flow pattern in basic insulating 3-D geometries for the actual and for more advanced liquid-metal blanket concepts and discussed the ways to avoid pressure losses caused by flow redistribution. Flows in several geometries, such as symmetric and non-symmetric 180 turns with and without manifolds, sharp elbows, sharp and linear expansions with and without manifolds, T-junction, etc., have been calculated. They demonstrate high reliability of poloidal concepts of liquid-metal blankets, since they guarantee uniform conditions for heat transfer. If changes of the duct cross-section occur in the plane perpendicular to the magnetic field (ideally a coolant should flow always in the radial-poloidal plane) the disturbances are local and the slug velocity profile is reached roughly at the distance equivalent to one duct width from the manifolds, expansions, etc. The effects of inertia in these flows are unimportant for the determination of the pressure drop and mean velocity profiles in the core of the flow but may favour heat transfer characteristics via instabilities and strongly anisotropic turbulence. (orig./HP) [de

Electronic Structure of the Pyrochlore-Type Ru Oxides through the Metal--Insulator Transition

International Nuclear Information System (INIS)

Okamoto, J.; Fujimori, S.I.; Okane, T.; Fujimori, A.; Abbate, M.; Yoshii, S.; Sato, M.

2003-01-01

The electronic structures of the pyrochlore-type Ru oxides Sm 2-x Ca x Ru 2 O 7 and Sm 2-x Bi x Ru 2 O 7 , which show metal-insulator transition with increasing Ca or Bi concentration, have been studied by ultraviolet photoemission spectroscopy. Spectral changes near the Fermi level are different but reflect the tendency of their transport properties in both systems. The Sm 2-x Ca x Ru 2 O 7 system shows an energy shift, which is expected from the increase of hole in the Ru 4d t 2g band and the Sm 2 - x Bi x Ru 2 O 7 system shows spectral weight transfer within the Ru 4d t 2g band, which is expected to be observed in bandwidth-control Mott-Hubbard system. (author)

Evaluation of conjugate, radial heat transfer in an internally insulated composite pipe

NARCIS (Netherlands)

Reurings, C.; Koussios, S.; Bergsma, O.K.; Vergote, K.

2015-01-01

In order to compete with steel, a fibre-reinforced composite exhaust wall with a general-purpose resin system requires an effective but lightweight insulation layer. However a lack of experimental methods for heat transfer from turbulent gas flow to pipe walls lined with a porous insulation layer

Topological insulators and topological superconductors

CERN Document Server

Bernevig, Andrei B

2013-01-01

This graduate-level textbook is the first pedagogical synthesis of the field of topological insulators and superconductors, one of the most exciting areas of research in condensed matter physics. Presenting the latest developments, while providing all the calculations necessary for a self-contained and complete description of the discipline, it is ideal for graduate students and researchers preparing to work in this area, and it will be an essential reference both within and outside the classroom. The book begins with simple concepts such as Berry phases, Dirac fermions, Hall conductance and its link to topology, and the Hofstadter problem of lattice electrons in a magnetic field. It moves on to explain topological phases of matter such as Chern insulators, two- and three-dimensional topological insulators, and Majorana p-wave wires. Additionally, the book covers zero modes on vortices in topological superconductors, time-reversal topological superconductors, and topological responses/field theory and topolo...

Limiting oxygen concentration for extinction of upward spreading flames over inclined thin polyethylene-insulated NiCr electrical wires with opposed-flow under normal- and micro-gravity

KAUST Repository

Hu, Longhua; Lu, Yong; Yoshioka, Kosuke; Zhang, Yangshu; Fernandez-Pello, Carlos; Chung, Suk-Ho; Fujita, Osamu

2016-01-01

. The experiments reported here used polyethylene (PE)-insulated (thickness of 0.15 mm) Nichrome (NiCr)-core (diameter of 0.5 mm) electrical wires. Limiting oxygen concentrations (LOC) at extinction were measured for upward spreading flame at various forced opposed-flow

Nanometric holograms based on a topological insulator material.

Science.gov (United States)

Yue, Zengji; Xue, Gaolei; Liu, Juan; Wang, Yongtian; Gu, Min

2017-05-18

Holography has extremely extensive applications in conventional optical instruments spanning optical microscopy and imaging, three-dimensional displays and metrology. To integrate holography with modern low-dimensional electronic devices, holograms need to be thinned to a nanometric scale. However, to keep a pronounced phase shift modulation, the thickness of holograms has been generally limited to the optical wavelength scale, which hinders their integration with ultrathin electronic devices. Here, we break this limit and achieve 60 nm holograms using a topological insulator material. We discover that nanometric topological insulator thin films act as an intrinsic optical resonant cavity due to the unequal refractive indices in their metallic surfaces and bulk. The resonant cavity leads to enhancement of phase shifts and thus the holographic imaging. Our work paves a way towards integrating holography with flat electronic devices for optical imaging, data storage and information security.

Trapping in GaN-based metal-insulator-semiconductor transistors: Role of high drain bias and hot electrons

Energy Technology Data Exchange (ETDEWEB)

Meneghini, M., E-mail: matteo.meneghini@dei.unipd.it; Bisi, D.; Meneghesso, G.; Zanoni, E. [Department of Information Engineering, University of Padova, via Gradenigo 6/B, 35131 Padova (Italy); Marcon, D.; Stoffels, S.; Van Hove, M.; Wu, T.-L.; Decoutere, S. [IMEC, Kapeldreef 75, 3001 Heverlee (Belgium)

2014-04-07

This paper describes an extensive analysis of the role of off-state and semi-on state bias in inducing the trapping in GaN-based power High Electron Mobility Transistors. The study is based on combined pulsed characterization and on-resistance transient measurements. We demonstrate that—by changing the quiescent bias point from the off-state to the semi-on state—it is possible to separately analyze two relevant trapping mechanisms: (i) the trapping of electrons in the gate-drain access region, activated by the exposure to high drain bias in the off-state; (ii) the trapping of hot-electrons within the AlGaN barrier or the gate insulator, which occurs when the devices are operated in the semi-on state. The dependence of these two mechanisms on the bias conditions and on temperature, and the properties (activation energy and cross section) of the related traps are described in the text.

Variable range hopping in TiO2 insulating layers for oxide electronic devices

Directory of Open Access Journals (Sweden)

Y. L. Zhao

2012-03-01

Full Text Available TiO2 thin films are of importance in oxide electronics, e.g., Pt/TiO2/Pt for memristors and Co-TiO2/TiO2/Co-TiO2 for spin tunneling devices. When such structures are deposited at a variety of oxygen pressures, how does TiO2 behave as an insulator? We report the discovery of an anomalous resistivity minimum in a TiO2 film at low pressure (not strongly dependent on deposition temperature. Hall measurements rule out band transport and in most of the pressure range the transport is variable range hopping (VRH though below 20 K it was difficult to differentiate between Mott and Efros-Shklovskii's (ES mechanism. Magnetoresistance (MR of the sample with lowest resistivity was positive at low temperature (for VRH but negative above 10 K indicating quantum interference effects.

Influence of PCMs in thermal insulation on thermal behaviour of building envelopes

Science.gov (United States)

Dydek, K.; Furmański, P.; Łapka, P.

2016-09-01

A model of heat transfer through a wall consisting of a layer of concrete and PCM enhanced thermal insulation is considered. The model accounts for heat conduction in both layers, thermal radiation and heat absorption/release due to phase change in the insulation as well as time variation in the ambient temperature and insolation. Local thermal equilibrium between encapsulated PCM and light-weight thermal insulation was assumed. Radiation emission, absorption and scattering were also accounted for in the model. Comparison of different cases of heat flow through the building envelope was carried out. These cases included presence or absence of PCM and thermal radiation in the insulation, effect of emissivity of the PCM microcapsules as well as an effect of solar radiation or its lack on the ambient side of the envelope. Two ways of the PCM distribution in thermal insulation were also considered. The results of simulations were presented for conditions corresponding to the mean summer and winter seasons in Warsaw. It was found that thermal radiation plays an important role in heat transfer through thermal insulation layer of the wall while the presence of the PCM in it significantly contributes to damping of temperature fluctuations and a decrease in heat fluxes flowing into or lost by the interior of the building. The similar effect was observed for a decrease in emissivity of the microcapsules containing PCM.

Local Peltier-effect-induced reversible metal–insulator transition in VO{sub 2} nanowires

Energy Technology Data Exchange (ETDEWEB)

Takami, Hidefumi; Kanki, Teruo, E-mail: kanki@sanken.osaka-u.ac.jp, E-mail: h-tanaka@sanken.osaka-u.ac.jp; Tanaka, Hidekazu, E-mail: kanki@sanken.osaka-u.ac.jp, E-mail: h-tanaka@sanken.osaka-u.ac.jp [Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047 (Japan)

2016-06-15

We report anomalous resistance leaps and drops in VO{sub 2} nanowires with operating current density and direction, showing reversible and nonvolatile switching. This event is associated with the metal–insulator phase transition (MIT) of local nanodomains with coexistence states of metallic and insulating phases induced by thermoelectric cooling and heating effects. Because the interface of metal and insulator domains has much different Peltier coefficient, it is possible that a significant Peltier effect would be a source of the local MIT. This operation can be realized by one-dimensional domain configuration in VO{sub 2} nanowires because one straight current path through the electronic domain-interface enables theoretical control of thermoelectric effects. This result will open a new method of reversible control of electronic states in correlated electron materials.

A system for cooling electronic elements with an EHD coolant flow

International Nuclear Information System (INIS)

Tanski, M; Kocik, M; Barbucha, R; Garasz, K; Mizeraczyk, J; Kraśniewski, J; Oleksy, M; Hapka, A; Janke, W

2014-01-01

A system for cooling electronic components where the liquid coolant flow is forced with ion-drag type EHD micropumps was tested. For tests we used isopropyl alcohol as the coolant and CSD02060 diodes in TO-220 packages as cooled electronic elements. We have studied thermal characteristics of diodes cooled with EHD flow in the function of a coolant flow rate. The transient thermal impedance of the CSD02060 diode cooled with 1.5 ml/min EHD flow was 7.8°C/W. Similar transient thermal impedance can be achieved by applying to the diode a large RAD-A6405A/150 heat sink. We found out that EHD pumps can be successfully applied for cooling electronic elements.

PIC simulations of conical magnetically insulated transmission line with LTD generator: Transition from self-limited to load-limited flow

Science.gov (United States)

Liu, Laqun; Wang, Huihui; Guo, Fan; Zou, Wenkang; Liu, Dagang

2017-04-01

Based on the 3-dimensional Particle-In-Cell (PIC) code CHIPIC3D, with a new circuit boundary algorithm we developed, a conical magnetically insulated transmission line (MITL) with a 1.0-MV linear transformer driver (LTD) is explored numerically. The values of switch jitter time of LTD are critical parameters for the system, which are difficult to be measured experimentally. In this paper, these values are obtained by comparing the PIC results with experimental data of large diode-gap MITL. By decreasing the diode gap, we find that all PIC results agree well with experimental data only if MITL works on self-limited flow no matter how large the diode gap is. However, when the diode gap decreases to a threshold, the self-limited flow would transfer to a load-limited flow. In this situation, PIC results no longer agree with experimental data anymore due to the anode plasma expansion in the diode load. This disagreement is used to estimate the plasma expansion speed.

Two-order parameters theory of the metal-insulator phase transition kinetics in the magnetic field

Science.gov (United States)

Dubovskii, L. B.

2018-05-01

The metal-insulator phase transition is considered within the framework of the Ginzburg-Landau approach for the phase transition described with two coupled order parameters. One of the order parameters is the mass density which variation is responsible for the origin of nonzero overlapping of the two different electron bands and the appearance of free electron carriers. This transition is assumed to be a first-order phase one. The free electron carriers are described with the vector-function representing the second-order parameter responsible for the continuous phase transition. This order parameter determines mostly the physical properties of the metal-insulator transition and leads to a singularity of the surface tension at the metal-insulator interface. The magnetic field is involved into the consideration of the system. The magnetic field leads to new singularities of the surface tension at the metal-insulator interface and results in a drastic variation of the phase transition kinetics. A strong singularity in the surface tension results from the Landau diamagnetism and determines anomalous features of the metal-insulator transition kinetics.

Transport of electric charge in insulators

International Nuclear Information System (INIS)

Lopez C, E.

1979-01-01

In this work a review is made of important concepts in the study of the transport of electric charge in insulators. These concepts are: electrical contacts, transport regimes as viewed in the I-V characteristics, and photoinjection processes by internal photemission of holes or electrons from metals or semiconductors into insulators or by a virtual electrode using strongly absorbed light. Experimental results of photoinjection of holes and electrons into sulfur single crystals are analyzed using these concepts. The observation of the Mott-Gurney transition is reported for the first time. This is the transition between the region of space charge limited currents (SCLC) and the region of saturation of the current as a function of the applied voltage. A modified Mott-Gurney theoretical model is presented that is able to explain the whole I-V characteristic for uv and the internal photoemission of hopes and uv photoinjection of electrons. For the case of internal photoemission of electrons the conventional space charge limited current theory for an exponential distribution of traps is able to explain the experimental data. It is found that the crystals are of high purity since the total density of traps, as calculated from their exponential distribution, is Nsub(t) equals 1.8 X 10 14 cm -3 . (author)

Impact of lattice strain on the tunnel magnetoresistance in Fe/insulator/Fe and Fe/insulator/La0.67Sr0.33MnO3 magnetic tunnel junctions

KAUST Repository

Useinov, Arthur

2013-08-19

The objective of this work is to describe the tunnel electron current in single-barrier magnetic tunnel junctions within an approach that goes beyond the single-band transport model. We propose a ballistic multichannel electron transport model that can explain the influence of in-plane lattice strain on the tunnel magnetoresistance as well as the asymmetric voltage behavior. We consider as an example single-crystal magnetic Fe(110) electrodes for Fe/insulator/Fe and Fe/insulator/La0.67Sr0.33MnO3 tunnel junctions, where the electronic band structures of Fe and La0.67Sr0.33MnO3 are derived by ab initio calculations.

Impact of lattice strain on the tunnel magnetoresistance in Fe/insulator/Fe and Fe/insulator/La0.67Sr0.33MnO3 magnetic tunnel junctions

KAUST Repository

Useinov, Arthur; Saeed, Yasir; Schwingenschlö gl, Udo; Singh, Nirpendra; Useinov, N.

2013-01-01

The objective of this work is to describe the tunnel electron current in single-barrier magnetic tunnel junctions within an approach that goes beyond the single-band transport model. We propose a ballistic multichannel electron transport model that can explain the influence of in-plane lattice strain on the tunnel magnetoresistance as well as the asymmetric voltage behavior. We consider as an example single-crystal magnetic Fe(110) electrodes for Fe/insulator/Fe and Fe/insulator/La0.67Sr0.33MnO3 tunnel junctions, where the electronic band structures of Fe and La0.67Sr0.33MnO3 are derived by ab initio calculations.

Manufacture of axially insulated large-area diodes

International Nuclear Information System (INIS)

Ma Weiyi; Zhou Kungang; Wang Youtian; Zhang Dong; Shan Yusheng; Wang Naiyan

1999-01-01

The author describes the design and construction of the axially insulated large-area diodes used in the 'Heaven-1'. The four axially insulated large-area diodes are connected to the 10 ohm pulse transmission lines via the vacuum feed through tubes. The experimental results with the diodes are given. The diodes can steadily work at the voltage of 650 kV, and the diode current density is about 80 A per cm 2 with a pulse width of 220 ns. The electron beams with a total energy of 25 kJ are obtained

Thin film plasma coatings from dielectric free-flowing materials

International Nuclear Information System (INIS)

Timofeeva, L.A.; Katrich, S.A.; Solntsev, L.A.

1994-01-01

Fabrication of thin film plasma coatings from insulating free-flowing materials is considered. Molybdenum-tart ammonium coating of 3...5 μ thickness deposited on glassy carbon, aluminium, silicon, nickel, cast iron and steel substrates in 'Bulat-ZT' machine using insulating free-flowing materials cathod was found to form due to adsorption, absorption and dissuasion processes. The use of insulating free-flowing materials coatings allow to exclude pure metals cathods in plasma-plating process

Topological Field Theory of Time-Reversal Invariant Insulators

Energy Technology Data Exchange (ETDEWEB)

Qi, Xiao-Liang; Hughes, Taylor; Zhang, Shou-Cheng; /Stanford U., Phys. Dept.

2010-03-19

We show that the fundamental time reversal invariant (TRI) insulator exists in 4 + 1 dimensions, where the effective field theory is described by the 4 + 1 dimensional Chern-Simons theory and the topological properties of the electronic structure is classified by the second Chern number. These topological properties are the natural generalizations of the time reversal breaking (TRB) quantum Hall insulator in 2 + 1 dimensions. The TRI quantum spin Hall insulator in 2 + 1 dimensions and the topological insulator in 3 + 1 dimension can be obtained as descendants from the fundamental TRI insulator in 4 + 1 dimensions through a dimensional reduction procedure. The effective topological field theory, and the Z{sub 2} topological classification for the TRI insulators in 2+1 and 3+1 dimensions are naturally obtained from this procedure. All physically measurable topological response functions of the TRI insulators are completely described by the effective topological field theory. Our effective topological field theory predicts a number of novel and measurable phenomena, the most striking of which is the topological magneto-electric effect, where an electric field generates a magnetic field in the same direction, with an universal constant of proportionality quantized in odd multiples of the fine structure constant {alpha} = e{sup 2}/hc. Finally, we present a general classification of all topological insulators in various dimensions, and describe them in terms of a unified topological Chern-Simons field theory in phase space.

Individual Magnetic Molecules on Ultrathin Insulating Surfaces

Science.gov (United States)

El Hallak, Fadi; Warner, Ben; Hirjibehedin, Cyrus

2012-02-01

Single molecule magnets have attracted ample interest because of their exciting magnetic and quantum properties. Recent studies have demonstrated that some of these molecules can be evaporated on surfaces without losing their magnetic properties [M. Mannini et al., Nature 468, 417, (2010)]. This remarkable progress enhances the chances of real world applications for these molecules. We present STM imaging and spectroscopy data on iron phthalocyanine molecules deposited on Cu(100) and on a Cu2N ultrathin insulating surface. These molecules have been shown to display a large magnetic anisotropy on another thin insulating surface, oxidized Cu(110) [N. Tsukahara et al., Phys. Rev. Lett. 102, 167203 (2009)]. By using a combination of elastic and inelastic electron tunnelling spectroscopy, we investigate the binding of the molecules to the surface and the impact that the surface has on their electronic and magnetic properties.

Phenomenological model of an electron flow with a virtual cathode

International Nuclear Information System (INIS)

Koronovskij, A.A.; Khramov, A.E.; Anfinogenov, V.G.

1999-01-01

A phenomenological model of electron flow with a virtual cathode in diode space, which is a modification of cellular automation, is suggested. The type of models, called cellular conveyer, permits making allowance for distribution and delay in a beam with a virtual cathode. A good agreement between results of numerical study of electron flow dynamics and results obtained using the phenomenological model described has been achieved [ru

Investigation of the stability of polysilicon layers in SOI-structures under irradiation by electrons and hard magnetic field influence

Directory of Open Access Journals (Sweden)

Khoverko Yu. N.

2010-10-01

Full Text Available The properties of recrystallized polysilicon on insulator layers of p-type conductive SOI-structures with different carrier concentration irradiated with high-energy electrons flow about 1017 сm–2 in temperature range 4,2—300 К and high magnetic fields were investigated. It was found that heavily doped laser recrystallized polysilicon on insulator layers show its radiation resistance under irradiation with high-energy electrons and magnetoresistance of such material remains quite low in magnetic field about 14 T does not exceed 1—2%. Such qulity can be applied in designing of microelectronic sensors of mechanical values operable in hard conditions of exploitation.

Characteristics of a cold cathode electron source combined with secondary electron emission in a FED

International Nuclear Information System (INIS)

Lei Wei; Zhang Xiaobing; Zhou Xuedong; Zhu Zuoya; Lou Chaogang; Zhao Hongping

2005-01-01

In electron beam devices, the voltage applied to the cathode (w.r.t. grid voltage) provides the initial energy for the electrons. Based on the type of electron emission, the electron sources are (mainly) classified into thermionic cathodes and cold cathodes. The power consumption of a cold cathode is smaller than that of a thermionic cathode. The delay time of the electron emission from a cold cathode following the voltage rise is also smaller. In cathode ray tubes, field emission display (=FED) panels and other devices, the electron current emitted from the cathode needs to be modulated. Since the strong electric field, which is required to extract electrons from the cold cathode, accelerates the electrons to a high velocity near the gate electrode, the required voltage swing for the current modulation is also high. The design of the driving circuit becomes quite difficult and expensive for a high driving voltage. In this paper, an insulator plate with holes is placed in front of a cold cathode. When the primary electrons hit the surface of the insulator tunnels, secondary electrons are generated. In this paper, the characteristics of the secondary electrons emitted from the gate structure are studied. Because the energies of the secondary electrons are smaller than that of the primary electron, the driving voltage for the current modulation is decreased by the introduction of the insulator tunnels, resulting in an improved energy uniformity of the electron beam. Triode structures with inclined insulator tunnels and with double insulator plates are also fabricated and lead to further improvements in the energy uniformity. The improved energy uniformity predicted by the simulation calculations is demonstrated by the improved brightness uniformity in the screen display images

Magnetic states, correlation effects and metal-insulator transition in FCC lattice

Science.gov (United States)

Timirgazin, M. A.; Igoshev, P. A.; Arzhnikov, A. K.; Irkhin, V. Yu

2016-12-01

The ground-state magnetic phase diagram (including collinear and spiral states) of the single-band Hubbard model for the face-centered cubic lattice and related metal-insulator transition (MIT) are investigated within the slave-boson approach by Kotliar and Ruckenstein. The correlation-induced electron spectrum narrowing and a comparison with a generalized Hartree-Fock approximation allow one to estimate the strength of correlation effects. This, as well as the MIT scenario, depends dramatically on the ratio of the next-nearest and nearest electron hopping integrals {{t}\\prime}/t . In contrast with metallic state, possessing substantial band narrowing, insulator one is only weakly correlated. The magnetic (Slater) scenario of MIT is found to be superior over the Mott one. Unlike simple and body-centered cubic lattices, MIT is the first order transition (discontinuous) for most {{t}\\prime}/t . The insulator state is type-II or type-III antiferromagnet, and the metallic state is spin-spiral, collinear antiferromagnet or paramagnet depending on {{t}\\prime}/t . The picture of magnetic ordering is compared with that in the standard localized-electron (Heisenberg) model.

Weakly interacting topological insulators: Quantum criticality and the renormalization group approach

Science.gov (United States)

Chen, Wei

2018-03-01

For D -dimensional weakly interacting topological insulators in certain symmetry classes, the topological invariant can be calculated from a D - or (D +1 ) -dimensional integration over a certain curvature function that is expressed in terms of single-particle Green's functions. Based on the divergence of curvature function at the topological phase transition, we demonstrate how a renormalization group approach circumvents these integrations and reduces the necessary calculation to that for the Green's function alone, rendering a numerically efficient tool to identify topological phase transitions in a large parameter space. The method further unveils a number of statistical aspects related to the quantum criticality in weakly interacting topological insulators, including correlation function, critical exponents, and scaling laws, that can be used to characterize the topological phase transitions driven by either interacting or noninteracting parameters. We use 1D class BDI and 2D class A Dirac models with electron-electron and electron-phonon interactions to demonstrate these principles and find that interactions may change the critical exponents of the topological insulators.

Thermally-insulating layer for nuclear reactors

International Nuclear Information System (INIS)

1975-01-01

The thermally-insulating layer has been designed both for insulating surfaces within the core of a nuclear reactor and transmitting loads such as the core-weight. Said layer comprises a layer of bricks and a layer of tiles with smaller clearance between the tiles than between the bricks, the latter having a reduced cross-section against the tiles so as to be surrounded by relatively large interconnected ducts forming a continuous chamber behind the tile-layer in order to induce a substantial decreases in the transverse flow of the reactor-core coolant. The core preferably comprises hexagonal columns supported by rhomb-shaped plates, with channels distributed so as to mix the coolant of twelve columns. The plates are separated from support-tiles by means of pillars [fr

Metal-insulator transition induced in CaVO3 thin films

International Nuclear Information System (INIS)

Gu Man; Laverock, Jude; Chen, Bo; Smith, Kevin E.; Wolf, Stuart A.; Lu Jiwei

2013-01-01

Stoichiometric CaVO 3 (CVO) thin films of various thicknesses were grown on single crystal SrTiO 3 (STO) (001) substrates using a pulsed electron-beam deposition technique. The CVO films were capped with a 2.5 nm STO layer. We observed a temperature driven metal-insulator transition (MIT) in CVO films with thicknesses below 4 nm that was not observed in either thick CVO films or STO films. The emergence of this MIT can be attributed to the reduction in effective bandwidth due to a crossover from a three-dimensional metal to a two-dimensional insulator. The insulating phase was only induced with a drive current below 0.1 μA. X-ray absorption measurements indicated different electronic structures for thick and very thin films of CVO. Compared with the thick film (∼60 nm), thin films of CVO (2–4 nm) were more two-dimensional with the V charge state closer to V 4+ .

Raman Scattering as a Probe of the Magnetic State of BEDT-TTF Based Mott Insulators

Directory of Open Access Journals (Sweden)

Nora Hassan

2018-05-01

Full Text Available Quasi-two-dimensional Mott insulators based on BEDT-TTF molecules have recently demonstrated a variety of exotic states, which originate from electron–electron correlations and geometrical frustration of the lattice. Among those states are a triangular S = 1/2 spin liquid and quantum dipole liquid. In this article, we show the power of Raman scattering technique to characterize magnetic and electronic excitations of these states. Our results demonstrate a distinction between a spectrum of magnetic excitations in a simple Mott insulator with antiferromagnetic interactions, and a spectrum of an insulator with an additional on-site charge degree of freedom.

A Review of Irradiation Effects on Organic-Matrix Insulation

International Nuclear Information System (INIS)

Simon, N.J.

1993-01-01

This review assesses the data base on epoxy and polyimide matrix insulation to determine whether organic electric insulation systems can be used in the toroidal field (TF) magnets of next generation fusion devices such as ITER* and TPX*. Owing to the difficulties of testing insulation under fusion reactor conditions, there is a considerable mismatch between the ITER requirements and the data that are currently available. For example, nearly all of the high-dose (5 x 10 7 to 10 8 Gy) data obtained on epoxy and polyimide matrix insulation employed gamma irradiation, electron irradiation, or reactor irradiation with a fast neutron fluence far below 10 23 /m 2 , the fluence expected for the insulation at the TF magnets, as set forth in ITER conceptual design documents. Also, the neutron spectrum did not contain a very high energy (E (ge) 5 MeV) component. Such data underestimate the actual damage that would be obtained with the neutron fluence and spectrum expected at a TF magnet. Experiments on a polyimide (Kapton) indicate that gamma or electron doses or mixed gamma and neutron reactor doses would have to be downgraded by a factor of up to ten to simulate fusion neutron doses. Even when neutrons did constitute a significant portion of the total dose, B-containing E-glass reinforcement was often used; therefore, excess damage from the 10 B + n → 7 Li + α reaction occurred near the glass-epoxy interface. This problem can easily be avoided by substituting B-free glass (R, S, or T types)

The Impact of Roof Pitch and Ceiling Insulation on Cooling Load of Naturally-Ventilated Attics

Directory of Open Access Journals (Sweden)

Linxia Gu

2012-07-01

Full Text Available A 2D unsteady computational fluid dynamics (CFD model is employed to simulate buoyancy-driven turbulent ventilation in attics with different pitch values and ceiling insulation levels under summer conditions. The impacts of roof pitch and ceiling insulation on the cooling load of gable-roof residential buildings are investigated based on the simulation of turbulent air flow and natural convection heat transfer in attic spaces with roof pitches from 3/12 to 18/12 combined with ceiling insulation levels from R-1.2 to R-40. The modeling results show that the air flows in the attics are steady and exhibit a general streamline pattern that is qualitatively insensitive to the investigated variations of roof pitch and ceiling insulation. Furthermore, it is predicted that the ceiling insulation plays a control role on the attic cooling load and that an increase of roof pitch from 3/12 to 8/12 results in a decrease in the cooling load by around 9% in the investigated cases. The results suggest that the increase of roof pitch alone, without changing other design parameters, has limited impact on attics cooling load and airflow pattern. The research results also suggest both the predicted ventilating mass flow rate and attic cooling load can be satisfactorily correlated by simple relationships in terms of appropriately defined Rayleigh and Nusselt numbers.

Absorbed Dose Distributions in Irradiated Plastic Tubing and Wire Insulation

DEFF Research Database (Denmark)

Miller, Arne; McLaughlin, W. L.

1979-01-01

Plastic tubing and wire insulation were simulated by radiochromic dye dosimeter films having electron absorbing properties similar to the materials of interest (polyethylene and PVC). A 400-keV electron accelerator was used to irradiate from 1, 2, 3 and 4 sides simulating possible industrial...

Simultaneous in-bore rail and insulator spectra from a railgun plasma armature

International Nuclear Information System (INIS)

Keefer, D.; Sedghinasah, A.; Crawford, R.

1991-01-01

This paper reports on absolute spectral radiance measurements obtained simultaneously at the rail and insulator surface of the UTSI 1 cm square-bore railgun. The emission spectra were obtained through the use of quartz optical fibers which penetrated both the rail and the insulator walls. The spectral characteristics of the rail and insulator emission are quite similar but differ significantly in magnitude. A detailed plasma radiation model was used to analyze these spectra. In order to obtain reasonable agreement between the model predictions and the experimental spectra, it was necessary to assume that these existed a broadband absorbing layer at the insulator surface. This result suggests a new physical model of the plasma armature in which insulator ablation leads to significant 3-dimensional flow and affects the shape of the current emission pattern on the rail surfaces

Developing Topological Insulator Fiber Based Photon Pairs Source for Ultrafast Optoelectronic Applications

Science.gov (United States)

2016-04-01

of a thin layer of topological insulator Bi2Se3 with the transmission of T = 50%. We apply magnetic field B=3 tesla normal to the sample and parallel...nonlinear induced by magnetic field in the Topological Insulator Bi2Se3 and Molybdenum Disulfide MoS2. The nonlinear effect is pulse broadening...Topological Insulator Q- Switched Erbium-Doped Fiber Laser”, IEEE J. Sel. Top. Quant. Electron., 20, 0900508 (2014). [2]. Shuqing Chen et al, “Stable Q

Slow and fast electron concentrations

International Nuclear Information System (INIS)

MacDougall, P.J.

1991-01-01

We consider the physical significance of the topology of the Laplacian of the electron momentum density. Via a single simple postulate, the electrical properties of metals, superconductors, and insulators are linked to well-defined and observable topological features in this distribution From this postulate it follows that a necessary condition for superconductivity is a closed path of cusp singularities in the material's time-averaged distribution. The topology of the path is constrained by the geometry of the sample and its environment. Yet, by virtue of the postulate, the unique collision properties of this path (in momentum space suggest that it charts a common course for electrons throughout the material, along which there is absolute minimum resistance to electron flow. As a further consequence of the postulate, it is also predicted that the preferred planes or axes of electron transport in anisotropic conductors with correspond to uniquely and unambiguously defined topological features of the Laplacian of the electron momentum distribution. (Author) 34 refs., 2 figs., tab

Two dimensional topological insulator in quantizing magnetic fields

Science.gov (United States)

Olshanetsky, E. B.; Kvon, Z. D.; Gusev, G. M.; Mikhailov, N. N.; Dvoretsky, S. A.

2018-05-01

The effect of quantizing magnetic field on the electron transport is investigated in a two dimensional topological insulator (2D TI) based on a 8 nm (013) HgTe quantum well (QW). The local resistance behavior is indicative of a metal-insulator transition at B ≈ 6 T. On the whole the experimental data agrees with the theory according to which the helical edge states transport in a 2D TI persists from zero up to a critical magnetic field Bc after which a gap opens up in the 2D TI spectrum.

Chiral topological excitons in a Chern band insulator

Science.gov (United States)

Chen, Ke; Shindou, Ryuichi

2017-10-01

A family of semiconductors called Chern band insulators are shown to host exciton bands with nonzero topological Chern integers and chiral exciton edge modes. Using a prototypical two-band Chern insulator model, we calculate a cross-correlation function to obtain the exciton bands and their Chern integers. The lowest exciton band acquires Chern integers such as ±1 and ±2 in the electronic Chern insulator phase. The nontrivial topology can be experimentally observed both by a nonlocal optoelectronic response of exciton edge modes and by a phase shift in the cross-correlation response due to the bulk mode. Our result suggests that magnetically doped HgTe, InAs/GaSb quantum wells, and (Bi,Sb)2Te3 thin films are promising candidates for a platform of topological excitonics.

Influence of copper on the by-products of different oil-paper insulations

International Nuclear Information System (INIS)

Hao Jian; Liao Ruijin; Chen, George; Ma Chao

2011-01-01

Transformer failure caused by the corrosion of copper material in transformer attracts great attention of researchers and engineers. In this paper, Karamay No. 25 naphthenic mineral oil, Karamay No. 25 paraffinic mineral oil, Kraft paper and copper were used to compose four combinations of oil-paper insulation samples. The ageing by-products and dielectric properties of the four combinations of oil-paper insulation samples were compared after they were thermally aged at 130 deg. C. The influence of copper on the by-products and dielectric properties of different oil-paper insulations was obtained. The results show that copper can accelerate the ageing rate of insulation oils and reduce their AC breakdown voltage. The content of copper substance dissolved in insulating oil increases with ageing time at first and then decreases. The paper aged in the oil-paper insulation sample with copper has higher moisture content than the one without copper. Results of energy dispersive spectroscopy (EDS) in the scanning electron microscope (SEM) show that there is copper product deposited on the surface of insulation paper. The insulation oil and paper aged in the oil-paper insulation sample with copper have higher dielectric loss and conductivity than that without copper.

Influence of copper on the by-products of different oil-paper insulations

Energy Technology Data Exchange (ETDEWEB)

Hao Jian; Liao Ruijin [State Key Laboratory of Power Transmission Equipment and System Security and New Technology, Chongqing University (China); Chen, George [School of Electronics and Computer Science, University of Southampton (United Kingdom); Ma Chao, E-mail: cquhaojian@126.com [Gansu Electric Power Research Institute (China)

2011-08-12

Transformer failure caused by the corrosion of copper material in transformer attracts great attention of researchers and engineers. In this paper, Karamay No. 25 naphthenic mineral oil, Karamay No. 25 paraffinic mineral oil, Kraft paper and copper were used to compose four combinations of oil-paper insulation samples. The ageing by-products and dielectric properties of the four combinations of oil-paper insulation samples were compared after they were thermally aged at 130 deg. C. The influence of copper on the by-products and dielectric properties of different oil-paper insulations was obtained. The results show that copper can accelerate the ageing rate of insulation oils and reduce their AC breakdown voltage. The content of copper substance dissolved in insulating oil increases with ageing time at first and then decreases. The paper aged in the oil-paper insulation sample with copper has higher moisture content than the one without copper. Results of energy dispersive spectroscopy (EDS) in the scanning electron microscope (SEM) show that there is copper product deposited on the surface of insulation paper. The insulation oil and paper aged in the oil-paper insulation sample with copper have higher dielectric loss and conductivity than that without copper.

Strain engineering and one-dimensional organization of metal-insulator domains in single-crystal vanadium dioxide beams.

Science.gov (United States)

Cao, J; Ertekin, E; Srinivasan, V; Fan, W; Huang, S; Zheng, H; Yim, J W L; Khanal, D R; Ogletree, D F; Grossman, J C; Wu, J

2009-11-01

Correlated electron materials can undergo a variety of phase transitions, including superconductivity, the metal-insulator transition and colossal magnetoresistance. Moreover, multiple physical phases or domains with dimensions of nanometres to micrometres can coexist in these materials at temperatures where a pure phase is expected. Making use of the properties of correlated electron materials in device applications will require the ability to control domain structures and phase transitions in these materials. Lattice strain has been shown to cause the coexistence of metallic and insulating phases in the Mott insulator VO(2). Here, we show that we can nucleate and manipulate ordered arrays of metallic and insulating domains along single-crystal beams of VO(2) by continuously tuning the strain over a wide range of values. The Mott transition between a low-temperature insulating phase and a high-temperature metallic phase usually occurs at 341 K in VO(2), but the active control of strain allows us to reduce this transition temperature to room temperature. In addition to device applications, the ability to control the phase structure of VO(2) with strain could lead to a deeper understanding of the correlated electron materials in general.

The effect of van der Waal's gap expansions on the surface electronic structure of layered topological insulators

International Nuclear Information System (INIS)

Eremeev, S V; Vergniory, M G; Chulkov, E V; Menshchikova, T V; Shaposhnikov, A A

2012-01-01

On the basis of relativistic ab initio calculations, we show that an expansion of van der Waal's (vdW) spacings in layered topological insulators caused by intercalation of deposited atoms, leads to the simultaneous emergence of parabolic and M-shaped two-dimensional electron gas (2DEG) bands as well as Rashba-splitting of the former states. The expansion of vdW spacings and the emergence of the 2DEG states localized in the (sub)surface region are also accompanied by a relocation of the topological surface state to the lower quintuple layers, that can explain the absence of inter-band scattering found experimentally. (paper)

Distribution of Energy Deposited in Plastic Tubing and Copper-Wire Insulation by Electron Beam Irradiation

DEFF Research Database (Denmark)

Pedersen, Walther Batsberg; Miller, Arne; Pejtersen, K.

1978-01-01

chloride insulation. Radiochromic dye films equivalent to the insulating materials were used as accurate dosimeters having a response independent of dose rate. Irradiations were in various geometries, wire and plastic thicknesses, positions along the beam scan, and with different backing materials near...

Prediction of breakdown voltages in novel gases for high voltage insulation

International Nuclear Information System (INIS)

Koch, M.

2015-01-01

This thesis submitted to the Swiss Federal Institute of Technology ETH in Zurich examines the use of sulphur hexafluoride (SF_6) and similar gases as important insulation media for high voltage equipment. Due to its superior insulation properties, SF_6 is widely used in gas-insulated switchgear. However, the gas also has a very high global warming potential and the content of SF_6 in the atmosphere is constantly increasing. The search for new insulation gases using classical breakdown experiments is discussed. A model for SF_6 based on the stepped leader model is described. This calculates the breakdown voltages in arbitrary electrode configurations and under standard voltage waveforms. Thus, the thesis provides a method for the prediction of breakdown voltages of arbitrary field configurations under standard voltage waveforms for gases with electron-attaching properties. With this, further gases can be characterized for usage as high voltage insulation media

AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors with reduced leakage current and enhanced breakdown voltage using aluminum ion implantation

Energy Technology Data Exchange (ETDEWEB)

Sun, Shichuang [Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074 (China); Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, Suzhou 215123 (China); Fu, Kai, E-mail: kfu2009@sinano.ac.cn, E-mail: cqchen@mail.hust.edu.cn; Yu, Guohao; Zhang, Zhili; Song, Liang; Deng, Xuguang; Li, Shuiming; Sun, Qian; Cai, Yong; Zhang, Baoshun [Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, Suzhou 215123 (China); Qi, Zhiqiang; Dai, Jiangnan; Chen, Changqing, E-mail: kfu2009@sinano.ac.cn, E-mail: cqchen@mail.hust.edu.cn [Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074 (China)

2016-01-04

This letter has studied the performance of AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors on silicon substrate with GaN buffer treated by aluminum ion implantation for insulating followed by a channel regrown by metal–organic chemical vapor deposition. For samples with Al ion implantation of multiple energies of 140 keV (dose: 1.4 × 10{sup 14} cm{sup −2}) and 90 keV (dose: 1 × 10{sup 14} cm{sup −2}), the OFF-state leakage current is decreased by more than 3 orders and the breakdown voltage is enhanced by nearly 6 times compared to the samples without Al ion implantation. Besides, little degradation of electrical properties of the 2D electron gas channel is observed where the maximum drain current I{sub DSmax} at a gate voltage of 3 V was 701 mA/mm and the maximum transconductance g{sub mmax} was 83 mS/mm.

Development of a Diehard GEM using PTFE insulator substrate

International Nuclear Information System (INIS)

Wakabayashi, M; Tamagawa, T; Takeuchi, Y; Aoki, K; Taketani, A; Komiya, K; Hamagaki, H

2014-01-01

We have developed the gas electron multiplier (GEM) using polytetrafluoroethylene (PTFE) insulator substrate (PTFE-GEM). Carbonization on insulator layer by discharges shorts the GEM electrodes, causing permanent breakdown. Since PTFE is hard to be carbonized against arc discharges, PTFE-GEM is expected to be robust against breakdown. Gains as high as 2.6 × 10 4 were achieved with PTFE-GEM (50 μm thick) in Ar/CO 2 = 70%/30% gas mixture at V GEM = 730 V. PTFE-GEM never showed a permanent breakdown even after suffering more than 40000 times discharges during the experiment. The result demonstrates that PTFE-GEM is really robust against discharges. We conclude that PTFE is an excellent insulator material for the GEM productions

Phase-field model of insulator-to-metal transition in VO2 under an electric field

Science.gov (United States)

Shi, Yin; Chen, Long-Qing

2018-05-01

The roles of an electric field and electronic doping in insulator-to-metal transitions are still not well understood. Here we formulated a phase-field model of insulator-to-metal transitions by taking into account both structural and electronic instabilities as well as free electrons and holes in VO2, a strongly correlated transition-metal oxide. Our phase-field simulations demonstrate that in a VO2 slab under a uniform electric field, an abrupt universal resistive transition occurs inside the supercooling region, in sharp contrast to the conventional Landau-Zener smooth electric breakdown. We also show that hole doping may decouple the structural and electronic phase transitions in VO2, leading to a metastable metallic monoclinic phase which could be stabilized through a geometrical confinement and the size effect. This work provides a general mesoscale thermodynamic framework for understanding the influences of electric field, electronic doping, and stress and strain on insulator-to-metal transitions and the corresponding mesoscale domain structure evolution in VO2 and related strongly correlated systems.

XUV preionization effects in high power magnetically insulated diodes

International Nuclear Information System (INIS)

Maenchen, J.; Woodworth, J.R.; Foltz, B.W.

1985-01-01

Electrode surface desorption and photoionization by an intense XUV pulse has been shown to dramatically improve a vacuum diode impedance history. The 6-Terawatt Applied-B ion diode experiment on PBFA I is limited by a delay in both diode and ion current initiation. The insulation magnetic field impedes electron crossings which are believed to aid the ion source initiation. The diode is therefore initially a severe overmatch to the accelerator 40-nsec, 2.2-MV, 0.5-ohm pulse. The diode current increases during the pulse, leading to a rapidly falling impedance history. The application of an intense (30 to 50-kW/cm 2 ) XUV flux from an array of sixteen 60-kA spark sources is found to cause immediate diode current flow, resulting in both a greatly improved impedance history and the prompt initiation of an intense higher power ion beam

Characterization of light element impurities in ultrathin silicon-on-insulator layers by luminescence activation using electron irradiation

International Nuclear Information System (INIS)

Nakagawa-Toyota, Satoko; Tajima, Michio; Hirose, Kazuyuki; Ohshima, Takeshi; Itoh, Hisayoshi

2009-01-01

We analyzed light element impurities in ultrathin top Si layers of silicon-on-insulator (SOI) wafers by luminescence activation using electron irradiation. Photoluminescence (PL) analysis under ultraviolet (UV) light excitation was performed on various commercial SOI wafers after the irradiation. We detected the C-line related to a complex of interstitial carbon and oxygen impurities and the G-line related to a complex of interstitial and substitutional carbon impurities in the top Si layer with a thickness down to 62 nm after electron irradiation. We showed that there were differences in the impurity concentration depending on the wafer fabrication methods and also that there were variations in these concentrations in the respective wafers. Xenon ion implantation was used to activate top Si layers selectively so that we could confirm that the PL signal under the UV light excitation comes not from substrates but from top Si layers. The present method is a very promising tool to evaluate the light element impurities in top Si layers. (author)

Development of a Diehard GEM using PTFE insulator substrate

OpenAIRE

Wakabayashi, M.; Komiya, K.; Tamagawa, T.; Takeuchi, Y.; Aoki, K.; Taketani, A.; Hamagaki, H.

2014-01-01

We have developed the gas electron multiplier (GEM) using polytetrafluoroethylene (PTFE) insulator substrate (PTFE-GEM). Carbonization on insulator layer by discharges shorts the GEM electrodes, causing permanent breakdown. Since PTFE is hard to be carbonized against arc discharges, PTFE-GEM is expected to be robust against breakdown. Gains as high as 2.6x10^4 were achieved with PTFE-GEM (50 um thick) in Ar/CO2 = 70%/30% gas mixture at V_GEM = 730V. PTFE-GEM never showed a permanent breakdown...

Metal-insulator transition induced in CaVO{sub 3} thin films

Energy Technology Data Exchange (ETDEWEB)

Gu Man [Department of Physics, University of Virginia, 382 McCormick Rd., Charlottesville, Virginia 22904 (United States); Laverock, Jude; Chen, Bo; Smith, Kevin E. [Department of Physics, Boston University, 590 Commonwealth Avenue, Boston, Massachusetts 02215 (United States); Wolf, Stuart A. [Department of Physics, University of Virginia, 382 McCormick Rd., Charlottesville, Virginia 22904 (United States); Department of Materials Science and Engineering, University of Virginia, 395 McCormick Rd., Charlottesville, Virginia 22904 (United States); Lu Jiwei [Department of Materials Science and Engineering, University of Virginia, 395 McCormick Rd., Charlottesville, Virginia 22904 (United States)

2013-04-07

Stoichiometric CaVO{sub 3} (CVO) thin films of various thicknesses were grown on single crystal SrTiO{sub 3} (STO) (001) substrates using a pulsed electron-beam deposition technique. The CVO films were capped with a 2.5 nm STO layer. We observed a temperature driven metal-insulator transition (MIT) in CVO films with thicknesses below 4 nm that was not observed in either thick CVO films or STO films. The emergence of this MIT can be attributed to the reduction in effective bandwidth due to a crossover from a three-dimensional metal to a two-dimensional insulator. The insulating phase was only induced with a drive current below 0.1 {mu}A. X-ray absorption measurements indicated different electronic structures for thick and very thin films of CVO. Compared with the thick film ({approx}60 nm), thin films of CVO (2-4 nm) were more two-dimensional with the V charge state closer to V{sup 4+}.

Tests for the dynamic behavior of insulation valve screws

International Nuclear Information System (INIS)

Tulke, K.D.; Stoppler, W.; Stern, G.

1994-01-01

Thermal tensile tests were performed at a temperature of 270 C, with two new original insulation valve conical screws M30-Tx92,5 mm (material: 21 CrMo V 5 7)and two prestrained ones during the event on 27.12.92. In order to assure the results obtained with regard to the dynamic load on the insulation valve during ''quick opening'', in addition tensile impact tests were performed at 270 C with six original insulation valve conical screws. Impact velocity reached 13,5 m/s at four screws and 6 m/s at two screws. Test conditions regarding collision damping and mass distribution were adapted, by means of parameter studies, to the situation of the insulation valve. During thermal tensile tests, strength and deformation values, such as stress at flow start, tensile strength, fracture prolongation and strain, necking at fracture as well as energy absorption up to maximum force and up to rupture, were determined. During tensile impact tests, deformation values, such as elongation, strain and necking, and energy absorption by the screw, were determined. (orig.) [de

Superconductivity and ferromagnetism in topological insulators

Science.gov (United States)

Zhang, Duming

Topological insulators, a new state of matter discovered recently, have attracted great interest due to their novel properties. They are insulating inside the bulk, but conducting at the surface or edges. This peculiar behavior is characterized by an insulating bulk energy gap and gapless surface or edge states, which originate from strong spin-orbit coupling and time-reversal symmetry. The spin and momentum locked surface states not only provide a model system to study fundamental physics, but can also lead to applications in spintronics and dissipationless electronics. While topological insulators are interesting by themselves, more exotic behaviors are predicted when an energy gap is induced at the surface. This dissertation explores two types of surface state gap in topological insulators, a superconducting gap induced by proximity effect and a magnetic gap induced by chemical doping. The first three chapters provide introductory theory and experimental details of my research. Chapter 1 provides a brief introduction to the theoretical background of topological insulators. Chapter 2 is dedicated to material synthesis principles and techniques. I will focus on two major synthesis methods: molecular beam epitaxy for the growth of Bi2Se3 thin films and chemical vapor deposition for the growth of Bi2Se3 nanoribbons and nanowires. Material characterization is discussed in Chapter 3. I will describe structural, morphological, magnetic, electrical, and electronic characterization techniques used to study topological insulators. Chapter 4 discusses the experiments on proximity-induced superconductivity in topological insulator (Bi2Se3) nanoribbons. This work is motivated by the search for the elusive Majorana fermions, which act as their own antiparticles. They were proposed by Ettore Majorara in 1937, but have remained undiscovered. Recently, Majorana's concept has been revived in condensed matter physics: a condensed matter analog of Majorana fermions is predicted to

Electronic and transport properties of the Mn-doped topological insulator Bi.sub.2./sub.Te.sub.3./sub.: a first-principles study

Czech Academy of Sciences Publication Activity Database

Carva, K.; Kudrnovský, Josef; Máca, František; Drchal, Václav; Turek, I.; Baláž, P.; Tkáč, V.; Holý, V.; Sechovský, V.; Honolka, Jan

2016-01-01

Roč. 93, č. 21 (2016), s. 1-8, č. článku 214409. ISSN 2469-9950 R&D Projects: GA ČR(CZ) GA14-30062S Grant - others:AV ČR(CZ) Fellowship J. E. Purkyně Institutional support: RVO:68378271 Keywords : topological insulator * electronic structure * transport * Bi 2 Te 3 * Mn dopant Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.836, year: 2016

Tunable metal-insulator transitions in bilayer graphene by thermal annealing

OpenAIRE

Kalon, Gopinadhan; Shin, Young Jun; Yang, Hyunsoo

2012-01-01

Tunable and highly reproducible metal-insulator transitions have been observed in bilayer graphene upon thermal annealing at 400 K under high vacuum conditions. Before annealing, the sample is metallic in the whole temperature regime of study. Upon annealing, the conductivity changes from metallic to that of an insulator and the transition temperature is a function of annealing time. The pristine metallic state can be reinstated by exposing to air thereby inducing changes in the electronic pr...

Photo-response of a P3HT:PCBM blend in metal-insulator-semiconductor capacitors

Energy Technology Data Exchange (ETDEWEB)

Devynck, M.; Rostirolla, B.; Watson, C. P.; Taylor, D. M., E-mail: d.m.taylor@bangor.ac.uk [School of Electronic Engineering, Bangor University, Dean Street, Bangor, Gwynedd LL57 1UT (United Kingdom)

2014-11-03

Metal-insulator-semiconductor capacitors are investigated, in which the insulator is cross-linked polyvinylphenol and the active layer a blend of poly(3-hexylthiophene), P3HT, and the electron acceptor [6,6]-phenyl-C{sub 61}-butyric acid methyl ester (PCBM). Admittance spectra and capacitance-voltage measurements obtained in the dark both display similar behaviour to those previously observed in P3HT-only devices. However, the photo-capacitance response is significantly enhanced in the P3HT:PCBM case, where exciton dissociation leads to electron transfer into the PCBM component. The results are consistent with a network of PCBM aggregates that is continuous through the film but with no lateral interconnection between the aggregates at or near the blend/insulator interface.

Prediction of breakdown voltages in novel gases for high voltage insulation

Energy Technology Data Exchange (ETDEWEB)

Koch, M.

2015-07-01

This thesis submitted to the Swiss Federal Institute of Technology ETH in Zurich examines the use of sulphur hexafluoride (SF{sub 6}) and similar gases as important insulation media for high voltage equipment. Due to its superior insulation properties, SF{sub 6} is widely used in gas-insulated switchgear. However, the gas also has a very high global warming potential and the content of SF{sub 6} in the atmosphere is constantly increasing. The search for new insulation gases using classical breakdown experiments is discussed. A model for SF{sub 6} based on the stepped leader model is described. This calculates the breakdown voltages in arbitrary electrode configurations and under standard voltage waveforms. Thus, the thesis provides a method for the prediction of breakdown voltages of arbitrary field configurations under standard voltage waveforms for gases with electron-attaching properties. With this, further gases can be characterized for usage as high voltage insulation media.

High energy electron disinfection of sewage wastewater in flow systems

Energy Technology Data Exchange (ETDEWEB)

Miyata, T; Arai, H; Hosono, M; Tokunaga, O; Machi, S [Japan Atomic Energy Research Inst., Takasaki, Gunma (Japan). Takasaki Radiation Chemistry Research Establishment; Kondoh, M; Minemura, T; Nakao, A; Seike, Y [Sumitomo Heavy Industries Ltd., Tokyo (Japan)

1990-01-01

The disinfection of effluent municipal wastewaters by high-energy electrons in flow systems was studied using an experimental apparatus which has the maximum treatment capacity of 10.8 m{sup 3}/h. An electron accelerator with an accelerating voltage of 2 MV was used. The electron beam current was controlled to deliver the desired doses ranging from 0.05 to 1 kGy. Treatment times were in the range from 0.0022 to 0.051 s. Preliminary experiments with batch system using Petri dish of 100 ml showed that the effectiveness of electron irradiation on inactivation of coliforms was not influenced significantly by factors such as pH, SS, COD, DO and irradiation temperature. The dose required to produce 99.9% kill in the total population presented in wastewater were markedly affected by the thickness of water exposure to electron irradiation; that is, 0.39, 0.4 and 0.44 kGy for the depth of 5, 6 and 7 mm, respectively. The data obtained after a suitable correction for the doses due to the depth dose distribution showed no deviation from an experimental survival curve. Experiments with flow system indicated no measureable effect of the flow rate of wastewaters on the efficiency of disinfection in the range from 0.5 to 3.5 m/s. (author).

Investigation of self-powered gamma flux detectors with Lead(II) oxide serving as both emitter and insulator

International Nuclear Information System (INIS)

Shi, H.; Yue, S.; Jonkmans, G.; Sur, B.; Hilborn, J.

2010-01-01

The use of Lead(II) oxide as the electron-emitting component and the insulating component of self-powered flux detectors is a concept that had not been previously explored. Detectors constructed from various combinations of electrodes (stainless steel, Al, Pb, and W) and insulating materials (Al 2 O 3 and PbO) were irradiated in a 427 Gy/h gamma field. Although high gamma sensitivities were achieved, PbO did not prove to be a strong emitter of gamma-induced electrons. Nevertheless, PbO did serve as a better insulator than one that is currently in use, namely alumina. (author)

Flow balancing in liquid metal blankets

International Nuclear Information System (INIS)

Tillack, M.S.; Morley, N.B.

1995-01-01

Non-uniform flow distribution between parallel channels is one of the most serious concerns for self-cooled liquid metal blankets with electrically insulated walls. We show that uncertainties in flow distribution can be dramatically reduced by relatively simple design modifications. Several design features which impose flow uniformity by electrically coupling parallel channels are surveyed. Basic mechanisms for ''flow balancing'' are described, and a particular self-regulating concept using discrete passive electrodes is proposed for the US ITER advanced blanket concept. Scoping calculations suggest that this simple technique can be very powerful in equalizing the flow, even with massive insulator failures in individual channels. More detailed analyses and experimental verification will be required to demonstrate this concept for ITER. (orig.)

Effect of static charge fluctuations on the conduction along the edge of two-dimensional topological insulator

Science.gov (United States)

Vayrynen, Jukka; Goldstein, Moshe; Glazman, Leonid

2013-03-01

Static charge disorder may create electron puddles in the bulk of a material which nominally is in the insulating state. A single puddle - quantum dot - coupled to the helical edge of a two-dimensional topological insulator enhances the electron backscattering within the edge. The backscattering rate increases with the electron dwelling time in the dot. While remaining inelastic, the backscattering off a dot may be far more effective than the proposed earlier inelastic processes involving a local scatterer with no internal structure. We find the temperature dependence of the dot-induced correction to the universal conductance of the edge. In addition to the single-dot effect, we calculate the classical temperature-independent conductance correction caused by a weakly conducting bulk. We use our theory to assess the effect of static charge fluctuations in a heterostructure on the edge electron transport in a two-dimensional topological insulator. The work at Yale University is supported by NSF DMR Grant No. 1206612 and the Simons Foundation.

Thermal insulation

International Nuclear Information System (INIS)

Aspden, G.J.; Howard, R.S.

1988-01-01

The patent concerns high temperature thermal insulation of large vessels, such as the primary vessel of a liquid metal cooled nuclear reactor. The thermal insulation consists of multilayered thermal insulation modules, and each module comprises a number of metal sheet layers sandwiched between a back and front plate. The layers are linked together by straps and clips to control the thickness of the module. (U.K.)

Improved linearity in AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors with nonlinear polarization dielectric

International Nuclear Information System (INIS)

Gao, Tao; Xu, Ruimin; Kong, Yuechan; Zhou, Jianjun; Kong, Cen; Dong, Xun; Chen, Tangsheng

2015-01-01

We demonstrate highly improved linearity in a nonlinear ferroelectric of Pb(Zr 0.52 Ti 0.48 )-gated AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor (MIS-HEMT). Distinct double-hump feature in the transconductance-gate voltage (g m -V g ) curve is observed, yielding remarkable enhancement in gate voltage swing as compared to MIS-HEMT with conventional linear gate dielectric. By incorporating the ferroelectric polarization into a self-consistent calculation, it is disclosed that in addition to the common hump corresponding to the onset of electron accumulation, the second hump at high current level is originated from the nonlinear polar nature of ferroelectric, which enhances the gate capacitance by increasing equivalent dielectric constant nonlinearly. This work paves a way for design of high linearity GaN MIS-HEMT by exploiting the nonlinear properties of dielectric

Photosynthesis and photosynthetic electron flow in the alpine evergreen species Quercus guyavifolia in winter

Directory of Open Access Journals (Sweden)

Wei Huang

2016-10-01

Full Text Available Alpine evergreen broadleaf tree species must regularly cope with low night temperatures in winter. However, the effects of low night temperatures on photosynthesis in alpine evergreen broadleaf tree species are unclear. We measured the diurnal photosynthetic parameters before and after cold snap for leaves of Quercus guyavifolia growing in its native habitat at 3290 m. On 11 and 12 December 2013 (before cold snap, stomatal and mesophyll conductances (gs and gm, CO2 assimilation rate (An, and total electron flow through PSII (JPSII at daytime were maintained at high levels. The major action of alternative electron flow was to provide extra ATP for primary metabolisms. On 20 December 2013 (after cold snap, the diurnal values of gs, gm, An and JPSII at daytime largely decreased, mainly due to the large decrease in night air temperature. Meanwhile, the ratio of photorespiration and alternative electron flow to JPSII largely increased on 20 December. Furthermore, the high levels of alternative electron flow were accompanied with low rates of extra ATP production. A quantitative limitation analysis reveals that the gm limitation increased on 20 December with decreased night air temperature. Therefore, the night air temperature was an important determinant of stomatal/mesophyll conductance and photosynthesis. When photosynthesis is inhibited following freezing night temperatures, photorespiration and alternative electron flow are important electron sinks, which support the role of photorespiration and alternative electron flow in photoportection for alpine plants under low temperatures.

Self-magnetically insulated ion diode

International Nuclear Information System (INIS)

VanDevender, J.; Quintenz, J.; Leeper, R.; Johnson, D.; Crow, J.

1981-01-01

Light ion diodes for producing 1--100 TW ion beams are required for inertial confinement fusion. The theory, numerical simulations, and experiments on a self-magnetically insulated ion diode are presented. The treatment is from the point of view of a self-magnetically insulated transmission line with an ion loss current and differs from the usual treatment of the pinched electron beam diode. The simulations show that the ratio V/IZ 0 =0.25 in such a structure with voltage V, local total current I, and local vacuum wave impedance Z 0 . The ion current density is enhanced by a factor of approximately 2 over the simple space-charge limited value. The simulation results are verified in an experiment. An analytical theory is then presented for scaling the results to produce a focused beam of protons with a power of up to 10 13 W

Dressed topological insulators. Rashba impurity, Kondo effect, magnetic impurities, proximity-induced superconductivity, hybrid systems

International Nuclear Information System (INIS)

Posske, Thore Hagen

2016-01-01

Topological insulators are electronic phases that insulate in the bulk and accommodate a peculiar, metallic edge liquid with a spin-dependent dispersion. They are regarded to be of considerable future use in spintronics and for quantum computation. Besides determining the intrinsic properties of this rather novel electronic phase, considering its combination with well-known physical systems can generate genuinely new physics. In this thesis, we report on such combinations including topological insulators. Specifically, we analyze an attached Rashba impurity, a Kondo dot in the two channel setup, magnetic impurities on the surface of a strong three-dimensional topological insulator, the proximity coupling of the latter system to a superconductor, and hybrid systems consisting of a topological insulator and a semimetal. Let us summarize our primary results. Firstly, we determine an analytical formula for the Kondo cloud and describe its possible detection in current correlations far away from the Kondo region. We thereby rely on and extend the method of refermionizable points. Furthermore, we find a class of gapless topological superconductors and semimetals, which accommodate edge states that behave similarly to the ones of globally gapped topological phases. Unexpectedly, we also find edge states that change their chirality when affected by sufficiently strong disorder. We regard the presented research helpful in future classifications and applications of systems containing topological insulators, of which we propose some examples.

Dressed topological insulators. Rashba impurity, Kondo effect, magnetic impurities, proximity-induced superconductivity, hybrid systems

Energy Technology Data Exchange (ETDEWEB)

Posske, Thore Hagen

2016-02-26

Topological insulators are electronic phases that insulate in the bulk and accommodate a peculiar, metallic edge liquid with a spin-dependent dispersion. They are regarded to be of considerable future use in spintronics and for quantum computation. Besides determining the intrinsic properties of this rather novel electronic phase, considering its combination with well-known physical systems can generate genuinely new physics. In this thesis, we report on such combinations including topological insulators. Specifically, we analyze an attached Rashba impurity, a Kondo dot in the two channel setup, magnetic impurities on the surface of a strong three-dimensional topological insulator, the proximity coupling of the latter system to a superconductor, and hybrid systems consisting of a topological insulator and a semimetal. Let us summarize our primary results. Firstly, we determine an analytical formula for the Kondo cloud and describe its possible detection in current correlations far away from the Kondo region. We thereby rely on and extend the method of refermionizable points. Furthermore, we find a class of gapless topological superconductors and semimetals, which accommodate edge states that behave similarly to the ones of globally gapped topological phases. Unexpectedly, we also find edge states that change their chirality when affected by sufficiently strong disorder. We regard the presented research helpful in future classifications and applications of systems containing topological insulators, of which we propose some examples.

Asymmetric Cherenkov acoustic reverse in topological insulators

Science.gov (United States)

Smirnov, Sergey

2014-09-01

A general phenomenon of the Cherenkov radiation known in optics or acoustics of conventional materials is a formation of a forward cone of, respectively, photons or phonons emitted by a particle accelerated above the speed of light or sound in those materials. Here we suggest three-dimensional topological insulators as a unique platform to fundamentally explore and practically exploit the acoustic aspect of the Cherenkov effect. We demonstrate that by applying an in-plane magnetic field to a surface of a three-dimensional topological insulator one may suppress the forward Cherenkov sound up to zero at a critical magnetic field. Above the critical field the Cherenkov sound acquires pure backward nature with the polar distribution differing from the forward one generated below the critical field. Potential applications of this asymmetric Cherenkov reverse are in the design of low energy electronic devices such as acoustic ratchets or, in general, in low power design of electronic circuits with a magnetic field control of the direction and magnitude of the Cherenkov dissipation.

Amorphous topological insulators constructed from random point sets

Science.gov (United States)

Mitchell, Noah P.; Nash, Lisa M.; Hexner, Daniel; Turner, Ari M.; Irvine, William T. M.

2018-04-01

The discovery that the band structure of electronic insulators may be topologically non-trivial has revealed distinct phases of electronic matter with novel properties1,2. Recently, mechanical lattices have been found to have similarly rich structure in their phononic excitations3,4, giving rise to protected unidirectional edge modes5-7. In all of these cases, however, as well as in other topological metamaterials3,8, the underlying structure was finely tuned, be it through periodicity, quasi-periodicity or isostaticity. Here we show that amorphous Chern insulators can be readily constructed from arbitrary underlying structures, including hyperuniform, jammed, quasi-crystalline and uniformly random point sets. While our findings apply to mechanical and electronic systems alike, we focus on networks of interacting gyroscopes as a model system. Local decorations control the topology of the vibrational spectrum, endowing amorphous structures with protected edge modes—with a chirality of choice. Using a real-space generalization of the Chern number, we investigate the topology of our structures numerically, analytically and experimentally. The robustness of our approach enables the topological design and self-assembly of non-crystalline topological metamaterials on the micro and macro scale.

Observation of the Spin Peltier Effect for Magnetic Insulators

NARCIS (Netherlands)

Flipse, J.; Dejene, F.K.; Wagenaar, D.; Bauer, G.E.W.; Ben Youssef, J.; Van Wees, B.J.

2014-01-01

We report the observation of the spin Peltier effect (SPE) in the ferrimagnetic insulator yttrium iron garnet (YIG), i.e., a heat current generated by a spin current flowing through a platinum (Pt)|YIG interface. The effect can be explained by the spin transfer torque that transforms the spin

Thermal spin current generation and spin transport in Pt/magnetic-insulator/Py heterostructures

Science.gov (United States)

Chen, Ching-Tzu; Safranski, Christopher; Krivorotov, Ilya; Sun, Jonathan

Magnetic insulators can transmit spin current via magnon propagation while blocking charge current. Furthermore, under Joule heating, magnon flow as a result of the spin Seeback effect can generate additional spin current. Incorporating magnetic insulators in a spin-orbit torque magnetoresistive memory device can potentially yield high switching efficiencies. Here we report the DC magneto-transport studies of these two effects in Pt/magnetic-insulator/Py heterostructures, using ferrimagnetic CoFexOy (CFO) and antiferromagnet NiO as the model magnetic insulators. We observe the presence and absence of the inverse spin-Hall signals from the thermal spin current in Pt/CFO/Py and Pt/NiO/Py structures. These results are consistent with our spin-torque FMR linewidths in comparison. We will also report investigations into the magnetic field-angle dependence of these observations.

The experiment study of the thermal insulation of the roof-slab of the main vessel of a LMFBR

International Nuclear Information System (INIS)

Wang Zhifeng; Wang Zhou; Yang Xianyong

1995-01-01

The effects of composition of insulation, i.e., reflective multi-plate thermal insulator, protecting the roof-slab of the vessel of the LMFBR on the heat transfer performance has been studied experimentally for CEFR. A economical form of the thermal insulation is suggested for CEFR. In addition, the scheme without reflective thermal insulator which has only a forced convection cooling system has been studied experimentally and a formula to calculate the average Nusselt number of the flow channel, which is valuable for CEFR design, has been raised

Pressure-driven insulator-metal transition in cubic phase UO2

Science.gov (United States)

Huang, Li; Wang, Yilin; Werner, Philipp

2017-09-01

Understanding the electronic properties of actinide oxides under pressure poses a great challenge for experimental and theoretical studies. Here, we investigate the electronic structure of cubic phase uranium dioxide at different volumes using a combination of density functional theory and dynamical mean-field theory. The ab initio calculations predict an orbital-selective insulator-metal transition at a moderate pressure of ∼45 GPa. At this pressure the uranium's 5f 5/2 state becomes metallic, while the 5f 7/2 state remains insulating up to about 60 GPa. In the metallic state, we observe a rapid decrease of the 5f occupation and total angular momentum with pressure. Simultaneously, the so-called “Zhang-Rice state”, which is of predominantly 5f 5/2 character, quickly disappears after the transition into the metallic phase.

Numerical Simulation of Natural Convection in a Vertically Installed Wet Thermal Insulator

Energy Technology Data Exchange (ETDEWEB)

Bae, Youngmin; Kim, Seong H.; Seo, Jae K.; Kim, Young I. [KAERI, Daejeon (Korea, Republic of)

2016-05-15

Natural convection in an enclosure with disconnected vertical partitions inside is thought of as major concerns in the design of thermal insulators. For example, in a system-integrated modular advanced reactor (SMART), vertical partitions are disposed inside the so-called wet thermal insulator with gaps at the top and bottom ends to compensate for thermal expansion . In such a case, buoyancy driven flow circulates throughout the enclosure, i.e., fluid rises up in the hot-side layers, passing through the gap at the top, moving downward in the vertical channels near the cold side, and returning to the hot-side layers via the gap at the bottom. Compared with the case of connected partitions, this often causes an undesirable increase in the circulation flow rate and heat transfer within the enclosure, thus deteriorating the thermal insulation performance. In this study, laminar natural convection in a tall rectangular enclosure with disconnected vertical partitions inside is investigated numerically. The effects of main governing parameters such as the modified Rayleigh number, enclosure height to width ratio, and number of fluid layers are scrutinized along with a discussion of the heat transfer regimes. This study investigates the laminar natural convection in a tall rectangular enclosure having isothermal side walls of different temperatures and insulated top and bottom walls with disconnected vertical partitions inside.

Numerical Simulation of Natural Convection in a Vertically Installed Wet Thermal Insulator

International Nuclear Information System (INIS)

Bae, Youngmin; Kim, Seong H.; Seo, Jae K.; Kim, Young I.

2016-01-01

Natural convection in an enclosure with disconnected vertical partitions inside is thought of as major concerns in the design of thermal insulators. For example, in a system-integrated modular advanced reactor (SMART), vertical partitions are disposed inside the so-called wet thermal insulator with gaps at the top and bottom ends to compensate for thermal expansion . In such a case, buoyancy driven flow circulates throughout the enclosure, i.e., fluid rises up in the hot-side layers, passing through the gap at the top, moving downward in the vertical channels near the cold side, and returning to the hot-side layers via the gap at the bottom. Compared with the case of connected partitions, this often causes an undesirable increase in the circulation flow rate and heat transfer within the enclosure, thus deteriorating the thermal insulation performance. In this study, laminar natural convection in a tall rectangular enclosure with disconnected vertical partitions inside is investigated numerically. The effects of main governing parameters such as the modified Rayleigh number, enclosure height to width ratio, and number of fluid layers are scrutinized along with a discussion of the heat transfer regimes. This study investigates the laminar natural convection in a tall rectangular enclosure having isothermal side walls of different temperatures and insulated top and bottom walls with disconnected vertical partitions inside

Estimation of thermal insulation performance in multi-layer insulator for liquid helium pipe

International Nuclear Information System (INIS)

Shibanuma, Kiyoshi; Kuriyama, Masaaki; Shibata, Takemasa

1991-01-01

For a multi-layer insulator around the liquid helium pipes for cryopumps of JT-60 NBI, a multi-layer insulator composed of 10 layers, which can be wound around the pipe at the same time and in which the respective layers are in concentric circles by shifting them in arrangement, has been developed and tested. As the result, it was shown that the newly developed multi-layer insulator has better thermal insulation performance than the existing one, i.e. the heat load of the newly developed insulator composed of 10 layers was reduced to 1/3 the heat load of the existing insulator, and the heat leak at the joint of the insulator in longitudinal direction of the pipe was negligible. In order to clarify thermal characteristics of the multi-layer insulator, the heat transfer through the insulator has been analyzed considering the radiation heat transfer by the netting spacer between the reflectors, and the temperature dependence on the emissivities and the heat transmission coefficients of these two components of the insulator. The analytical results were in good agreements with the experimental ones, so that the analytical method was shown to be valid. Concerning the influence of the number of layers and the layer density on the insulation performance of the insulator, analytical results showed that the multi-layer insulator with the number of layer about N = 20 and the layer density below 2.0 layer/mm was the most effective for the liquid helium pipe of a JT-60 cryopump. (author)

Demonstration of AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors with silicon-oxy-nitride as the gate insulator

International Nuclear Information System (INIS)

Balachander, K.; Arulkumaran, S.; Egawa, T.; Sano, Y.; Baskar, K.

2005-01-01

AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors (MOSHEMTs) were fabricated with plasma enhanced chemical vapor deposited silicon oxy-nitride (SiON) as an insulating layer. The compositions of SiON thin films were confirmed using X-ray photoelectron spectroscopy. The fabricated MOSHEMTs exhibited a very high saturation current density of 1.1 A/mm coupled with high positive operational gate voltage up to +7 V. The MOSHEMTs also exhibited four orders of low gate leakage current and high forward-on voltage when compared with the conventional HEMTs. The drain current collapse using gate pulse measurements showed only a negligible difference in the saturation current density revealing the drastic improvement in passivation of the surface states due to the high quality of dielectric thin films deposited. Thus, based on the improved direct-current operation, SiON can be considered to be a potential gate oxide comparable with other dielectric insulators

Development of signal processing electronics for self powered neutron detector signal with built-in on-line insulation monitoring [Paper No.:E3

International Nuclear Information System (INIS)

Das, Amitabha; Chaganty, S.P.

1993-01-01

Self powered neutron detectors (SPNDs) are employed to monitor in-core neutron flux in nuclear reactors for control, safety and mapping of in-core neutron flux. The d.c. current produced by SPND is converted into a proportional d.c. voltage, which in turn is used for various purposes stated above. This paper describes various features of the SPND amplifier developed in the Electronics Division of Bhabha Atomic Research Centre (BARC). It also outlines the principle of working of on-line monitoring of insulation resistance (IR) of the detector and associated mineral insulated (MI) and soft cables. The amplifier generates an alarm in case of the IR of the detector and the cable assembly falls below an accepted value or the cable is not connected to the amplifier and relieves the operator from periodic and manual checking of each of the individual detectors and ensures the validity of the signal for further processing. (author). 3 figs

Measurement of polychlorinated biphenyls in solid waste such as transformer insulation paper by supercritical fluid extraction and gas chromatography electron capture detection.

Science.gov (United States)

Chikushi, Hiroaki; Fujii, Yuka; Toda, Kei

2012-09-21

In this work, a method for measuring polychlorinated biphenyls (PCBs) in contaminated solid waste was investigated. This waste includes paper that is used in electric transformers to insulate electric components. The PCBs in paper sample were extracted by supercritical fluid extraction and analyzed by gas chromatography-electron capture detection. The recoveries with this method (84-101%) were much higher than those with conventional water extraction (0.08-14%), and were comparable to those with conventional organic solvent extraction. Limit of detection was 0.0074 mg kg(-1) and measurable up to 2.5 mg kg(-1) for 0.5 g of paper sample. Data for real insulation paper by the proposed method agreed well with those by the conventional organic solvent extraction. Extraction from wood and concrete was also investigated and good performance was obtained as well as for paper samples. The supercritical fluid extraction is simpler, faster, and greener than conventional organic solvent extraction. Copyright © 2012 Elsevier B.V. All rights reserved.

Luminescence from metals and insulators

International Nuclear Information System (INIS)

Crawford, O.H.

1985-01-01

The term luminescence is normally applied to light emission that is not explainable by the mechanisms discussed by the other speakers in this meeting. Specifically, it is not transition radiation, surface plasmon radiation, or bremsstrahlung. One normally thinks of luminescence as arising from one-electron transitions within a medium. This talk consists of an overview of luminescence from condensed matter under irradiation by either energetic particles or photons. The author begins with organic molecules, where luminescence is best understood, and then discusses inorganic insulators and metals. Finally, the dependence of yield upon projectile species and velocity is discussed, and predictions are made concerning the relative effectiveness of electrons, protons, and hydrogen atoms in exciting luminescence

Thermal insulating panel

Energy Technology Data Exchange (ETDEWEB)

Hughes, J.T.

1985-09-11

A panel of thermal insulation material has at least one main portion which comprises a dry particulate insulation material compressed within a porous envelope so that it is rigid or substantially rigid and at least one auxiliary portion which is secured to and extends along at least one of the edges of the main portions. The auxiliary portions comprise a substantially uncompressed dry particulate insulation material contained within an envelope. The insulation material of the auxiliary portion may be the same as or may be different from the insulation material of the main portion. The envelope of the auxiliary portion may be made of a porous or a non-porous material. (author).

Nanoscale Phase Separation and Lattice Complexity in VO2: The Metal–Insulator Transition Investigated by XANES via Auger Electron Yield at the Vanadium L23-Edge and Resonant Photoemission

Directory of Open Access Journals (Sweden)

Augusto Marcelli

2017-12-01

Full Text Available Among transition metal oxides, VO2 is a particularly interesting and challenging correlated electron material where an insulator to metal transition (MIT occurs near room temperature. Here we investigate a 16 nm thick strained vanadium dioxide film, trying to clarify the dynamic behavior of the insulator/metal transition. We measured (resonant photoemission below and above the MIT transition temperature, focusing on heating and cooling effects at the vanadium L23-edge using X-ray Absorption Near-Edge Structure (XANES. The vanadium L23-edges probe the transitions from the 2p core level to final unoccupied states with 3d orbital symmetry above the Fermi level. The dynamics of the 3d unoccupied states both at the L3- and at the L2-edge are in agreement with the hysteretic behavior of this thin film. In the first stage of the cooling, the 3d unoccupied states do not change while the transition in the insulating phase appears below 60 °C. Finally, Resonant Photoemission Spectra (ResPES point out a shift of the Fermi level of ~0.75 eV, which can be correlated to the dynamics of the 3d// orbitals, the electron–electron correlation, and the stability of the metallic state.

Zonal flow generation in collisionless trapped electron mode turbulence

International Nuclear Information System (INIS)

Anderson, J; Nordman, H; Singh, R; Weiland, J

2006-01-01

In the present work the generation of zonal flows in collisionless trapped electron mode (TEM) turbulence is studied analytically. A reduced model for TEM turbulence is utilized based on an advanced fluid model for reactive drift waves. An analytical expression for the zonal flow growth rate is derived and compared with the linear TEM growth, and its scaling with plasma parameters is examined for typical tokamak parameter values

Improved linearity in AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors with nonlinear polarization dielectric

Energy Technology Data Exchange (ETDEWEB)

Gao, Tao [Fundamental Science on EHF Laboratory, University of Electronic Science and Technology of China (UESTC), Chengdu 611731 (China); Science and Technology on Monolithic Integrated Circuits and Modules Laboratory, Nanjing Electronic Devices Institute, Nanjing 210016 (China); Xu, Ruimin [Fundamental Science on EHF Laboratory, University of Electronic Science and Technology of China (UESTC), Chengdu 611731 (China); Kong, Yuechan, E-mail: kycfly@163.com; Zhou, Jianjun; Kong, Cen; Dong, Xun; Chen, Tangsheng [Science and Technology on Monolithic Integrated Circuits and Modules Laboratory, Nanjing Electronic Devices Institute, Nanjing 210016 (China)

2015-06-15

We demonstrate highly improved linearity in a nonlinear ferroelectric of Pb(Zr{sub 0.52}Ti{sub 0.48})-gated AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor (MIS-HEMT). Distinct double-hump feature in the transconductance-gate voltage (g{sub m}-V{sub g}) curve is observed, yielding remarkable enhancement in gate voltage swing as compared to MIS-HEMT with conventional linear gate dielectric. By incorporating the ferroelectric polarization into a self-consistent calculation, it is disclosed that in addition to the common hump corresponding to the onset of electron accumulation, the second hump at high current level is originated from the nonlinear polar nature of ferroelectric, which enhances the gate capacitance by increasing equivalent dielectric constant nonlinearly. This work paves a way for design of high linearity GaN MIS-HEMT by exploiting the nonlinear properties of dielectric.

Electrohydrodynamic Direct-Write Orderly Micro/Nanofibrous Structure on Flexible Insulating Substrate

Directory of Open Access Journals (Sweden)

Jiang-Yi Zheng

2014-01-01

Full Text Available AC pulse-modulated electrohydrodynamic direct-writing (EDW was utilized to direct-write orderly micro/nanofibrous structure on the flexible insulating polyethylene terephthalate (PET substrate. During the EDW process, AC electrical field induced charges to reciprocate along the jet and decreased the charge repulsive force that applied on charged jet. Thanks to the smaller charge repulsive force, stable straight jet can be built up to direct-write orderly micro/nanofibrous structures on the insulating substrate. The minimum motion velocity required to direct-write straight line fibrous structure on insulating PET substrate was 700 mm/s. Moreover, the influences of AC voltage amplitude, frequency, and duty cycle ratio on the line width of fibrous structures were investigated. This work proposes a novel solution to overcome the inherent charge repulsion emerging on the insulating substrate, and promotes the application of EDW technology on the flexible electronics.

Metallic insulation transport and strainer clogging tests

International Nuclear Information System (INIS)

Hyvaerinen, J.; Hongisto, O.

1994-06-01

Experiments to probe the transport and clogging properties of metallic (metal reflective) insulation have been carried out in order to provide data for evaluation of their influence on the emergency core cooling and containment spray systems of the Finnish boiling water reactors in the event of a design basis accident. The specific metallic insulation tested was DARMET, provided by Darchem Engineering Ltd. The inner foils of Darmet are dimped. Available literature on the metallic insulation performance under design basis accident conditions has been reviewed. On the basis of the review a parametric approach has been chosen for the transport and clogging experiments. This approach involves testing a wide size range of various shapes of foil pieces. Five sets of experiments have been carried out. The first three sets investigate transport properties of the foil pieces, starting from sedimentation in stagnant waste pool and proceeding to transport in horizontal and vertically circulating flows. The clogging experiments have been addressed the differential pressures obtained due to accumulation of both pure and metallic and a mixture of metallic and fibrous (mineral wool) depris. (4 refs., 24 figs., 2 tabs.)

Wall insulation system

Energy Technology Data Exchange (ETDEWEB)

Kostek, P.T.

1987-08-11

In a channel specially designed to fasten semi-rigid mineral fibre insulation to masonry walls, it is known to be constructed from 20 gauge galvanized steel or other suitable material. The channel is designed to have pre-punched holes along its length for fastening of the channel to the drywall screw. The unique feature of the channel is the teeth running along its length which are pressed into the surface of the butted together sections of the insulation providing a strong grip between the two adjacent pieces of insulation. Of prime importance to the success of this system is the recent technological advancements of the mineral fibre itself which allow the teeth of the channel to engage the insulation fully and hold without mechanical support, rather than be repelled or pushed back by the inherent nature of the insulation material. After the insulation is secured to the masonry wall by concrete nail fastening systems, the drywall is screwed to the channel.

Hubbard interaction in the arbitrary Chern number insulator: A mean-field study

Energy Technology Data Exchange (ETDEWEB)

Wang, Yi-Xiang, E-mail: wangyixiang@jiangnan.edu.cn [School of Science, Jiangnan University, Wuxi 214122 (China); Cao, Jie [College of Science, Hohai University, Nanjing 210098 (China)

2017-05-10

The low-dimensional electron gas owing topological property has attracted many interests recently. In this work, we study the influence of the electron-electron interaction on the arbitrary Chern number insulator. Using the mean-field method, we approximately solve the Hubbard model in the half-filling case and obtain the phase diagrams in different parametric spaces. We further verify the results by calculating the entanglement spectrum, which contains C chiral modes and corresponds to a real space partitioning. - Highlights: • In this work, we made a mean-field study of the Hubbard interaction in the arbitrary Chern number insulator. • We point out that how the Zeeman splitting, the local magnetization and the Hubbard interaction are intimately related. • The mean-field phase diagrams are obtained in different parametric spaces. • The Chern number phase is demonstrated by calculating the entanglement spectrum.

Study on the Secondary Electron Yield γ of Insulator for PDP Cathode

Science.gov (United States)

Motoyama, Y.; Ushirozawa, M.; Matsuzaki, H.; Takano, Y.; Seki, M.

1999-10-01

The secondary electron yield γ of the Plasma Display Panel (PDP) cathode is an important research object because it is closely related to the discharge voltages etc. For metal cathodes, we made a comprehensive examination^1 of γ for all rare gas ions and metastables according to Hagstrum's theory.^2 For γ of MgO, which is the useful insulator cathode, Aboelfotoh et al.^3 calculated the values for Ne and Ar ions supposing a monochrome PDP. However, the values of γ for other rare gas ions and their metastables necessary for a full color PDP have not yet been calculated. These values are calculated in the present study after them. The results are as follows: For ions, He:0.481 and Kr,Xe:0, assuming that there are no impurity levels in MgO; For metastables, He:0.491, Ne:0.489, Ar:0.428, Kr:0.381, and Xe:0.214. These results should serve as useful parameters in discharge simulation for the PDP. ^1H. Matsuzaki: Trans. IEE Jpn., 111-A, 971 (1991). ^2H.D. Hagstrum: Phys. Rev., 96, 336 (1954), ibid., 122, 83 (1961). ^3M.O. Aboelfotoh and J.A. Lorenzen: J. Appl. Phys., 48, 4754 (1977).

Countercurrent in high-current microsecond diodes with magnetic insulation

International Nuclear Information System (INIS)

Bugaev, S.P.; Kim, A.A.; Koshelev, V.I.

1979-01-01

In order to increase the efficiency of the generation of tube electron beams in diodes and the efficiency of the electron beam current pulse duration studied is the formation of the electron counter current in microsecond diodes with magnetic insulation in dependence on the various geometry of the cathode joint. The experiments have been carried out at the accelerator with the following parameters: diode voltage from 400 to 600 kV, the front and duration of the pulse 75 ns and 1-2 μs respectively, beam current from 4 to 17 kA, magnetic field of 18 kGs. The current in the drift tube and the total current of the electron gun have been measured. Distributing resistance current of vacuum insulator has been controlled. Conclusions have been made, that, in the case when the diameters of cathode and cathode holder are equal, the electron current is being produced from the reverse side of cathode plasma, which expands across the magnetic field with the rate of (4-5)x10 5 sm/cs. The counter current value has constituted 15% of the total current at the use of reflector with the geometry repeating the shape of the magnetic field force lines, corresponding to the cathode radius. The counter current has not been present at the use of the flat reflector

Electron emission from insulator surfaces by ultra-short laser pulses

Energy Technology Data Exchange (ETDEWEB)

Acuna, M; Gravielle, M S, E-mail: mario@iafe.uba.a, E-mail: msilvia@iafe.uba.a [Institutes de AstronomIa y Fisica del Espacio, Casilla de Correo 67, Sucursal 28, 1428 Buenos Aires (Argentina)

2009-11-01

Photoelectron emission from insulator surfaces induced by ultra-short laser pulses is studied within a time-dependent distorted wave method. The proposed approach combines the Volkov phase, which takes into account the laser interaction, with a simple representation of the unperturbed surface states, given by the Tight-binding method. The model is applied to evaluate the photoelectron emission from a LiF(001) surface, finding effects of interference produced by the crystal lattice.

Detector and front-end electronics of a fissile mass flow monitoring system

International Nuclear Information System (INIS)

Paulus, M.J.; Uckan, T.; Lenarduzzi, R.; Mullens, J.A.; Castleberry, K.N.; McMillan, D.E.; Mihalczo, J.T.

1997-01-01

A detector and front-end electronics unit with secure data transmission has been designed and implemented for a fissile mass flow monitoring system for fissile mass flow of gases and liquids in a pipe. The unit consists of 4 bismuth germanate (BGO) scintillation detectors, pulse-shaping and counting electronics, local temperature sensors, and on-board local area network nodes which locally acquire data and report to the master computer via a secure network link. The signal gain of the pulse-shaping circuitry and energy windows of the pulse-counting circuitry are periodicially self calibrated and self adjusted in situ using a characteristic line in the fissile material pulse height spectrum as a reference point to compensate for drift such as in the detector gain due to PM tube aging. The temperature- dependent signal amplitude variations due to the intrinsic temperature coefficients of the PM tube gain and BGO scintillation efficiency have been characterized and real-time gain corrections introduced. The detector and electronics design, measured intrinsic performance of the detectors and electronics, and the performance of the detector and electronics within the fissile mass flow monitoring system are described

Strain-induced metal-insulator phase coexistence in perovskite manganites.

Science.gov (United States)

Ahn, K H; Lookman, T; Bishop, A R

2004-03-25

The coexistence of distinct metallic and insulating electronic phases within the same sample of a perovskite manganite, such as La(1-x-y)Pr(y)Ca(x)MnO3, presents researchers with a tool for tuning the electronic properties in materials. In particular, colossal magnetoresistance in these materials--the dramatic reduction of resistivity in a magnetic field--is closely related to the observed texture owing to nanometre- and micrometre-scale inhomogeneities. Despite accumulated data from various high-resolution probes, a theoretical understanding for the existence of such inhomogeneities has been lacking. Mechanisms invoked so far, usually based on electronic mechanisms and chemical disorder, have been inadequate to describe the multiscale, multiphase coexistence within a unified picture. Moreover, lattice distortions and long-range strains are known to be important in the manganites. Here we show that the texturing can be due to the intrinsic complexity of a system with strong coupling between the electronic and elastic degrees of freedom. This leads to local energetically favourable configurations and provides a natural mechanism for the self-organized inhomogeneities over both nanometre and micrometre scales. The framework provides a physical understanding of various experimental results and a basis for engineering nanoscale patterns of metallic and insulating phases.

Insulating materials resistance in intense radiation beams

International Nuclear Information System (INIS)

Oproiu, Constantin; Martin, Diana; Scarlat, Florin; Timus, Dan; Brasoveanu, Mirela; Nemtanu, Monica

2002-01-01

The paper emphasizes the main changes of the mechanical and electrical properties of some organic insulating materials exposed to accelerated electron beams. These materials are liable to be used in nuclear plants and particle accelerators. The principal mechanical and electrical properties analyzed were: tensile strength, fracture strength, tearing on fracture, dielectric strength, electrical resistivity, dielectric constant and tangent angle of dielectric losses. (authors)

Reduction of heat insulation upon soaking of the insulation layer

Science.gov (United States)

Achtliger, J.

1983-09-01

Improved thermal protection of hollow masonry by introduction of a core insulation between the inner and outer shell is discussed. The thermal conductivity of insulation materials was determined in dry state and after soaking by water with different volume-related moisture contents. The interpolated thermal conductivity values from three measured values at 10 C average temperature are presented as a function of the pertinent moisture content. Fills of expanded polystyrene, perlite and granulated mineral fibers, insulating boards made of mineral fibers and in situ cellular plastics produced from urea-formaldehyde resin were investigated. Test results show a confirmation of thermal conductivity values for insulating materials in hollow masonry.

Surface treatment by the ion flow from electron beam generated plasma in the forevacuum pressure range

Directory of Open Access Journals (Sweden)

Klimov Aleksandr

2018-01-01

Full Text Available The paper presents research results of peculiarities of gas ion flows usage and their generation from large plasma formation (>50 sq.cm obtained by electron beam ionization of gas in the forevacuum pressure range. An upgraded source was used for electron beam generation, which allowed obtaining ribbon electron beam with no transmitting magnetic field. Absence of magnetic field in the area of ion flow formation enables to obtain directed ion flows without distorting their trajectories. In this case, independent control of current and ion energy is possible. The influence of electron beam parameters on the parameters of beam plasma and ion flow – current energy and density – was determined. The results of alumina ceramics treatment with a beam plasma ions flow are given.

Photoinduced Topological Phase Transitions in Topological Magnon Insulators.

Science.gov (United States)

Owerre, S A

2018-03-13

Topological magnon insulators are the bosonic analogs of electronic topological insulators. They are manifested in magnetic materials with topologically nontrivial magnon bands as realized experimentally in a quasi-two-dimensional (quasi-2D) kagomé ferromagnet Cu(1-3, bdc), and they also possess protected magnon edge modes. These topological magnetic materials can transport heat as well as spin currents, hence they can be useful for spintronic applications. Moreover, as magnons are charge-neutral spin-1 bosonic quasiparticles with a magnetic dipole moment, topological magnon materials can also interact with electromagnetic fields through the Aharonov-Casher effect. In this report, we study photoinduced topological phase transitions in intrinsic topological magnon insulators in the kagomé ferromagnets. Using magnonic Floquet-Bloch theory, we show that by varying the light intensity, periodically driven intrinsic topological magnetic materials can be manipulated into different topological phases with different sign of the Berry curvatures and the thermal Hall conductivity. We further show that, under certain conditions, periodically driven gapped topological magnon insulators can also be tuned to synthetic gapless topological magnon semimetals with Dirac-Weyl magnon cones. We envision that this work will pave the way for interesting new potential practical applications in topological magnetic materials.

Influence of different propellant systems on ablation of EPDM insulators in overload state

Science.gov (United States)

Guan, Yiwen; Li, Jiang; Liu, Yang; Xu, Tuanwei

2018-04-01

This study examines the propellants used in full-scale solid rocket motors (SRM) and investigates how insulator ablation is affected by two propellant formulations (A and B) during flight overload conditions. An experimental study, theoretical analysis, and numerical simulations were performed to discover the intrinsic causes of insulator ablation rates from the perspective of lab-scaled ground-firing tests, the decoupling of thermochemical ablation, and particle erosion. In addition, the difference in propellant composition, and the insulator charring layer microstructure were analyzed. Results reveal that the degree of insulator ablation is positively correlated with the propellant burn rate, particle velocity, and aggregate concentrations during the condensed phase. A lower ratio of energetic additive material in the AP oxidizer of the propellant is promising for the reduction in particle size and increase in the burn rate and pressure index. However, the overall higher velocity of a two-phase flow causes severe erosion of the insulation material. While the higher ratio of energetic additive to the AP oxidizer imparts a smaller ablation rate to the insulator (under lab-scale test conditions), the slag deposition problem in the combustion chamber may cause catastrophic consequences for future large full-scale SRM flight experiments.

Molecular beam epitaxial growth of Bi2Te3 and Sb2Te3 topological insulators on GaAs (111 substrates: a potential route to fabricate topological insulator p-n junction

Directory of Open Access Journals (Sweden)

Zhaoquan Zeng

2013-07-01

Full Text Available High quality Bi2Te3 and Sb2Te3 topological insulators films were epitaxially grown on GaAs (111 substrate using solid source molecular beam epitaxy. Their growth and behavior on both vicinal and non-vicinal GaAs (111 substrates were investigated by reflection high-energy electron diffraction, atomic force microscopy, X-ray diffraction, and high resolution transmission electron microscopy. It is found that non-vicinal GaAs (111 substrate is better than a vicinal substrate to provide high quality Bi2Te3 and Sb2Te3 films. Hall and magnetoresistance measurements indicate that p type Sb2Te3 and n type Bi2Te3 topological insulator films can be directly grown on a GaAs (111 substrate, which may pave a way to fabricate topological insulator p-n junction on the same substrate, compatible with the fabrication process of present semiconductor optoelectronic devices.

A Hall-current model of electron loss after POS opening into high-impedance loads

International Nuclear Information System (INIS)

Greenly, J.B.

1989-01-01

The author discusses how a self-consistent relativistic model of laminar Hall (E x B) electron flow across a POS plasma allows a loss mechanism after opening even in a strongly magnetically-insulated line, downstream of the remaining POS plasma. Opening is assumed to occur at the cathode, either by erosion or push-back. The loss results only when a large voltage appears after opening into a high impedance load. Then the difference in potential between the plasma, which is near anode potential, and the cathode results in an axial component of E at the load end of the plasma, which supports an E x B drift of electrons across the gap. The analytic model predicts that this loss should increase with higher voltage after opening, and could be eliminated only by removing the plasma from the gap, or eliminating cathode electron emission (both difficult), or by confining this downstream electron flow with an applied magnetic field

Interface States in AlGaN/GaN Metal-Insulator-Semiconductor High Electron Mobility Transistors

International Nuclear Information System (INIS)

Feng Qian; Du Kai; Li Yu-Kun; Shi Peng; Feng Qing

2013-01-01

Frequency-dependent capacitance and conductance measurements are performed on AlGaN/GaN high electron mobility transistors (HEMTs) and NbAlO/AlGaN/GaN metal-insulator-semiconductor HEMTs (MISHEMTs) to extract density and time constants of the trap states at NbAlO/AlGaN interface and gate/AlGaN interface with the gate-voltage biased into the accumulation region and that at the AlGaN/GaN interface with the gate-voltage biased into the depletion region in different circuit models. The measurement results indicate that the trap density at NbAlO/AlGaN interface is about one order lower than that at gate/AlGaN interface while the trap density at AlGaN/GaN interface is in the same order, so the NbAlO film can passivate the AlGaN surface effectively, which is consistent with the current collapse results

Ionic Potential and Band Narrowing as a Source of Orbital Polarization in Nickelate/Insulator Superlattices

Science.gov (United States)

Georgescu, Alexandru B.; Disa, Ankit S.; Kumah, Divine P.; Ismail-Beigi, Sohrab; Walker, Frederick J.; Ahn, Charles H.

Nickelate interfaces display complex, interacting electronic properties such as thickness dependent metal-insulator transitions. One large body of effort involving nickelates has aimed to split the energies of the Ni 3d orbitals (orbital polarization) to make the resulting band structure resemble that of cuprate superconductors. The most commonly studied interfacial system involves superlattices of alternating nickelate and insulating perovksite-structure layers; the resulting orbital polarization at the nickelate-insulator interface is understood as being due to confinement or structural symmetry breaking. By using first principles theory on the NdNiO3/NdAlO3 superlattice, we show that another important source of orbital polarization stems from electrostatic effects: the more ionic nature of the cations in the insulator (when compared to the nickelate) can shift the relative orbital energies of the Ni. We use density functional theory (DFT) and add electronic correlations via slave-bosons to describe the effect of correlation-induced band narrowing on the orbital polarization. Work supported by NSF Grant MRSEC DMR-1119826.

Dynamic surface electronic reconstruction as symmetry-protected topological orders in topological insulator Bi2Se3

Science.gov (United States)

Shu, G. J.; Liou, S. C.; Karna, S. K.; Sankar, R.; Hayashi, M.; Chou, F. C.

2018-04-01

The layered narrow-band-gap semiconductor Bi2Se3 is composed of heavy elements with strong spin-orbital coupling, which has been identified both as a good candidate for a thermoelectric material with high thermoelectric figure of merit (Z T ) and as a topological insulator of the Z2 type with a gapless surface band in a Dirac-cone shape. The existence of a conjugated π -bond system on the surface of each Bi2Se3 quintuple layer is proposed based on an extended valence bond model with valence electrons distributed in the hybridized orbitals. Supporting experimental evidence of a two-dimensional (2D) conjugated π -bond system on each quintuple layer of Bi2Se3 is provided using electron energy-loss spectroscopy and electron density mapping through inverse Fourier transform of x-ray diffraction data. Quantum chemistry calculations support the π -bond existence between partially filled 4 pz orbitals of Se via side-to-side orbital overlap positively. The conjugated π -bond system on the surface of each quintuple Bi2Se3 layer is proposed to be similar to that found in graphite (graphene) and responsible for the unique 2D conduction mechanism. The van der Waals (vdW) attractive force between quintuple layers is interpreted to be coming from the antiferroelectrically ordered effective electric dipoles, which are constructed with π -bond trimer pairs on Se layers across the vdW gap of minimized Coulomb repulsion.

Investigation of electronic lattice structure by positron annihilation in some insulators

International Nuclear Information System (INIS)

Coussot, Gerard

1970-01-01

The angular distribution of gamma quanta resulting from positron annihilation in single insulator crystals was measured with long slit geometry apparatus for intense positron sources ( 64 Cu ≅ 1 Ci). Two new phenomena were observed in the angular correlation curves. In the f. c. c. MgO, UO 2 , CaF 2 crystals, modulations appeared at angles corresponding to the limit of the first Brillouin zone in relation to the crystallographic direction studied. In SiO 2 , F 2 Mg, F 2 Mn crystals, a narrow peak at 0 mrad and a fine structure superimposed on the broad distribution, were resolved. The fine structure which is correlated with the narrow component is characterized by modulations appearing at angles corresponding to the projection of reciprocal lattice vectors along the crystallographic direction investigated. The narrow peak at p ≅ 0 suggests the formation of a bound state (positron-electron). If this bound state is described by a Bloch wave, the modulations observed correspond to the Fourier components which contribute to every reciprocal lattice vector p = G ('Umklapp' process). This model predicts that the 'Umklapp' process in polycrystals must produce a change in slope which can be experimentally observed. A systematic research of optimal observation conditions shows that the intensity of the narrow component is closely correlated with the purity and the perfection of the crystal where p-Ps is presumably formed as suggested by magnetic experiments. (author) [fr

Phase Separation in Doped Mott Insulators

Directory of Open Access Journals (Sweden)

Chuck-Hou Yee

2015-04-01

Full Text Available Motivated by the commonplace observation of Mott insulators away from integer filling, we construct a simple thermodynamic argument for phase separation in first-order doping-driven Mott transitions. We show how to compute the critical dopings required to drive the Mott transition using electronic structure calculations for the titanate family of perovskites, finding good agreement with experiment. The theory predicts that the transition is percolative and should exhibit Coulomb frustration.

Electron beam technology for purification of municipal wastewater in the aerosol flow

International Nuclear Information System (INIS)

Pikaev, A.K.; Podzorova, E.A.; Bakhtin, O.M.; Lysenko, S.L.; Belyshev, V.A.

2001-01-01

The paper summarizes the results from the study on EB and ozone treatment of wastewater in the aerosol flow. It includes the description of the respective pilot plant with output 500 m 3 /day (it is equipped with electron accelerator with electron energy 0.3 MeV and beam power 15 kW), the results of the study on the effects of electron irradiation on various group parameters (colour, COD, BOD 5 , total number of microbes, odour and so on) and content of inorganic and organic pollutants of municipal wastewater in the aerosol flow and the preliminary data on economic feasibility of the purification method. (author)

Propagation Characteristics of Multilayer Hybrid Insulator-Metal-Insulator and Metal-Insulator-Metal Plasmonic Waveguides

Directory of Open Access Journals (Sweden)

M. Talafi Noghani

2014-02-01

Full Text Available Propagation characteristics of symmetrical and asymmetrical multilayer hybrid insulator-metal-insulator (HIMI and metal-insulator-metal (HMIM plasmonic slab waveguides are investigated using the transfer matrix method. Propagation length (Lp and spatial length (Ls are used as two figures of merit to qualitate the plasmonic waveguides. Symmetrical structures are shown to be more performant (having higher Lp and lower Ls, nevertheless it is shown that usage of asymmetrical geometry could compensate for the performance degradation in practically realized HIMI waveguides with different substrate materials. It is found that HMIM slab waveguide could support almost long-range subdiffraction plasmonic modes at dimensions lower than the spatial length of the HIMI slab waveguide.

Nonvolatile Solid-State Charged-Polymer Gating of Topological Insulators into the Topological Insulating Regime

Science.gov (United States)

Ireland, R. M.; Wu, Liang; Salehi, M.; Oh, S.; Armitage, N. P.; Katz, H. E.

2018-04-01

We demonstrate the ability to reduce the carrier concentration of thin films of the topological insulator (TI) Bi2 Se3 by utilizing a nonvolatile electrostatic gating via corona charging of electret polymers. Sufficient electric field can be imparted to a polymer-TI bilayer to result in significant electron density depletion, even without the continuous connection of a gate electrode or the chemical modification of the TI. We show that the Fermi level of Bi2 Se3 is shifted toward the Dirac point with this method. Using terahertz spectroscopy, we find that the surface chemical potential is lowered into the bulk band gap (approximately 50 meV above the Dirac point and 170 meV below the conduction-band minimum), and it is stabilized in the intrinsic regime while enhancing electron mobility. The mobility of surface state electrons is enhanced to a value as high as approximately 1600 cm2/V s at 5 K.

Optical Manipulation and Detection of Emergent Phenomena in Topological Insulators

Energy Technology Data Exchange (ETDEWEB)

Gedik, Nuh [Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States). Dept. of Physics

2017-02-17

The three-dimensional topological insulator (TI) is a new quantum phase of matter that exhibits quantum-Hall-like properties, even in the absence of an external magnetic field. These materials are insulators in the bulk but have a topologically protected conducting state at the surface. Charge carriers on these surface states behave like a two-dimensional gas of massless helical Dirac fermions for which the spin is ideally locked perpendicular to the momentum. The purpose of this project is to probe the unique collective electronic behaviors of topological insulators by developing and using advanced time resolved spectroscopic techniques with state-of-the-art temporal and spatial resolutions. The nature of these materials requires development of specialized ultrafast techniques (such as time resolved ARPES that also has spin detection capability, ultrafast electron diffraction that has sub-100 fs time resolution and THz magneto-spectroscopy). The focus of this report is to detail our achievements in terms of establishing state of the art experimental facilities. Below, we will describe achievements under this award for the entire duration of five years. We will focus on detailing the development of ultrafast technqiues here. The details of the science that was done with these technqiues can be found in the publications referencing this grant.

Bandgap modulation in photoexcited topological insulator Bi{sub 2}Te{sub 3} via atomic displacements

Energy Technology Data Exchange (ETDEWEB)

Hada, Masaki, E-mail: hadamasaki@okayama-u.ac.jp [Graduate School of Natural Science and Technology, Okayama University, Okayama 700-8530 (Japan); Materials and Structures Laboratory, Tokyo Institute of Technology, Yokohama 226-8503 (Japan); PRESTO, Japan Science and Technology Agency, Kawaguchi 332-0012 (Japan); Norimatsu, Katsura; Tsuruta, Tetsuya; Igarashi, Kyushiro; Kayanuma, Yosuke; Sasagawa, Takao; Nakamura, Kazutaka G. [Materials and Structures Laboratory, Tokyo Institute of Technology, Yokohama 226-8503 (Japan); Tanaka, Sei' ichi; Ishikawa, Tadahiko; Koshihara, Shin-ya [Department of Chemistry and Materials Science, Tokyo Institute of Technology, Tokyo 152-8551 (Japan); Keskin, Sercan [The Max Planck Institute for the Structure and Dynamics of Matter, The Hamburg Centre for Ultrafast Imaging, University of Hamburg, Hamburg 22761 (Germany); Miller, R. J. Dwayne [The Max Planck Institute for the Structure and Dynamics of Matter, The Hamburg Centre for Ultrafast Imaging, University of Hamburg, Hamburg 22761 (Germany); Departments of Chemistry and Physics, University of Toronto, Toronto M5S 3H6 (Canada); Onda, Ken [PRESTO, Japan Science and Technology Agency, Kawaguchi 332-0012 (Japan); Graduate School of Science and Engineering, Tokyo Institute of Technology, Yokohama 226-8502 (Japan)

2016-07-14

The atomic and electronic dynamics in the topological insulator (TI) Bi{sub 2}Te{sub 3} under strong photoexcitation were characterized with time-resolved electron diffraction and time-resolved mid-infrared spectroscopy. Three-dimensional TIs characterized as bulk insulators with an electronic conduction surface band have shown a variety of exotic responses in terms of electronic transport when observed under conditions of applied pressure, magnetic field, or circularly polarized light. However, the atomic motions and their correlation between electronic systems in TIs under strong photoexcitation have not been explored. The artificial and transient modification of the electronic structures in TIs via photoinduced atomic motions represents a novel mechanism for providing a comparable level of bandgap control. The results of time-domain crystallography indicate that photoexcitation induces two-step atomic motions: first bismuth and then tellurium center-symmetric displacements. These atomic motions in Bi{sub 2}Te{sub 3} trigger 10% bulk bandgap narrowing, which is consistent with the time-resolved mid-infrared spectroscopy results.

2D-ACAR spectra of insulating and superconducting Y-123

International Nuclear Information System (INIS)

Smedskjaer, L.C.; Bansil, A.

1992-09-01

An overview of the two-dimensional angular correlation (2D-ACAR) positron annihilation results for the three fundamental phases of YBa 2 Cu 3 O x , namely, the normal metal, the superconductor, and the insulator, is presented. In addition to the c-axis projected momentum density, the recent results for the a-axis projection as well as the insulating Y123 are discussed. The experimental results are compared and contrasted with the corresponding band theory predictions as far as possible in order to gain insight into the electronic structure and Fermiology of this archetypal high-T c superconductor

Equivalent circuit modeling of space charge dominated magnetically insulated transmission lines

Energy Technology Data Exchange (ETDEWEB)

Hiraoka, Kazuki; Nakajima, Mitsuo; Horioka, Kazuhiko

1997-12-31

A new equivalent circuit model for space charge dominated MITLs (Magnetically Insulated Transmission Lines) was developed. MITLs under high power operation are dominated with space charge current flowing between anode and cathode. Conventional equivalent circuit model does not account for space charge effects on power flow. The model was modified to discuss the power transportation through the high power MITLs. With this model, it is possible to estimate the effects of space charge current on the power flow efficiency, without using complicated particle code simulations. (author). 3 figs., 3 refs.

Determination of the characteristics of an electric arc plasma contaminated by vapors from insulators

International Nuclear Information System (INIS)

Abbaoui, M.; Cheminat, B.

1991-01-01

An experimental study at atmospheric pressure carried out on plasma penetrated by vapors from different industrial insulators allowed the showing of the influence of the nature of the insulator upon the characteristics of the electric arc plasma; i.e., an increase of the temperature, electron density, electric field, and extinction velocity of the arc. Measurements have been made spectrometrically and by means of probes

Passive Collecting of Solar Radiation Energy using Transparent Thermal Insulators, Energetic Efficiency of Transparent Thermal Insulators

Directory of Open Access Journals (Sweden)

Smajo Sulejmanovic

2014-11-01

Full Text Available This paper explains passive collection of solar radiation energy using transparent thermal insulators. Transparent thermal insulators are transparent for sunlight, at the same time those are very good thermal insulators. Transparent thermal insulators can be placed instead of standard conventional thermal insulators and additionally transparent insulators can capture solar radiation, transform it into heat and save heat just as standard insulators. Using transparent insulators would lead to reduce in usage of fossil fuels and would help protection of an environment and reduce effects of global warming, etc.

High-k materials in the electrolyte/insulator/silicon configuration. Characterization and application in bio-electronics; Hoch-k-Materialien in der Elektrolyt/Isolator/Silizium-Konfiguration. Charakterisierung und Anwendung in der Bioelektronik

Energy Technology Data Exchange (ETDEWEB)

Wallrapp, F

2006-12-19

In order to elicit action potentials in nerve cells adhered on electrodes, a certain current is required across the electrode. Electrochemical reactions may cause damage to cells and electrodes. This is evaded by using silicon electrodes which are insulated by a dielectric. In doing so, only capacitive current is flowing, and electrochemical are avoided. The aim of this work was to fabricate novel stimulation chips exhibiting an enhanced capacitance which render new biological applications possible. These chips were to be characterized and used for the stimulation of cells. The formerly used dielectric SiO{sub 2} was replaced by HfO{sub 2} and TiO{sub 2}, with both of them featuring a higher dielectric constant. They were deposited on the silicon substrate by ALD (atomic layer deposition). The chips were characterized in the electrolyte/insulator/semiconductor (EIS) configuration. Owing to the low leakage current of the EIS configuration, the characterization of the high-k materials was possible in more detail as compared to using a metallic top contact (MIS configuration). The voltage-dependent capacitances of the HfO{sub 2} films could be interpreted by means of a common metal/SiO{sub 2}/silicon system. In contrast, the TiO{sub 2} films exhibited interesting properties which could only be rationalized with the help of numerical calculations assuming free electrons in the TiO{sub 2}. The low-lying conduction band of TiO{sub 2} caused accumulation of electrons within the TiO{sub 2} for certain voltages, which led to an enhanced capacitance. The effects of high voltages, frequency, film thickness and interlayer composition were examined and brought into compliance with the model. The novel TiO{sub 2} stimulation devices featured a five-fold capacitance increase as compared to former SiO{sub 2} chips. Using them, two fundamental stimulation mechanisms were induced in HEK293 cells expressing the recombinant potassium channel Kv1.3: Opening of ion channels and

Reorganization energy upon charging a single molecule on an insulator measured by atomic force microscopy

Science.gov (United States)

Fatayer, Shadi; Schuler, Bruno; Steurer, Wolfram; Scivetti, Ivan; Repp, Jascha; Gross, Leo; Persson, Mats; Meyer, Gerhard

2018-05-01

Intermolecular single-electron transfer on electrically insulating films is a key process in molecular electronics1-4 and an important example of a redox reaction5,6. Electron-transfer rates in molecular systems depend on a few fundamental parameters, such as interadsorbate distance, temperature and, in particular, the Marcus reorganization energy7. This crucial parameter is the energy gain that results from the distortion of the equilibrium nuclear geometry in the molecule and its environment on charging8,9. The substrate, especially ionic films10, can have an important influence on the reorganization energy11,12. Reorganization energies are measured in electrochemistry13 as well as with optical14,15 and photoemission spectroscopies16,17, but not at the single-molecule limit and nor on insulating surfaces. Atomic force microscopy (AFM), with single-charge sensitivity18-22, atomic-scale spatial resolution20 and operable on insulating films, overcomes these challenges. Here, we investigate redox reactions of single naphthalocyanine (NPc) molecules on multilayered NaCl films. Employing the atomic force microscope as an ultralow current meter allows us to measure the differential conductance related to transitions between two charge states in both directions. Thereby, the reorganization energy of NPc on NaCl is determined as (0.8 ± 0.2) eV, and density functional theory (DFT) calculations provide the atomistic picture of the nuclear relaxations on charging. Our approach presents a route to perform tunnelling spectroscopy of single adsorbates on insulating substrates and provides insight into single-electron intermolecular transport.

Numerical study of a heated cavity insulated by a horizontal laminar jet

Energy Technology Data Exchange (ETDEWEB)

Besbes, S.; Mhiri, H.; El Golli, S. [Ecole Nationale d' Ingenieurs de Monastir (Tunisia). Lab. de Mecanique des Fluides et Thermique; Le Palec, G.; Bournot, P. [Institut de Mecanique de Marseille (France)

2001-08-01

In this work, we present a numerical study of the thermal insulation of a heated two dimensional cavity limited on its superior part by a horizontal plane air jet. The lower horizontal wall is isothermal, while the two vertical walls are adiabatics. A finite difference method based on the stream function-vorticity formulation is developed to solve the dimensionless Navier-Stokes and energy equations resulting from some assumptions. The results allowed us to point out two flow configurations: if natural convection prevails, the hot jet issuing from the nozzle diffuses upwards, and consequently, the cavity cannot be insulated correctly. However, the use of an aspiration zone can then improve the insulation. When forced convection predominates, the hydrodynamic barrier is conserved, and the enclosure is also thermally well confined. (author)

Excitonic metal-insulator phase transition of the Mott type in compressed calcium

Science.gov (United States)

Voronkova, T. O.; Sarry, A. M.; Sarry, M. F.; Skidan, S. G.

2017-05-01

It has been experimentally found that, under the static compression of a calcium crystal at room temperature, it undergoes a series of structural phase transitions: face-centered cubic lattice → body-centered cubic lattice → simple cubic lattice. It has been decided to investigate precisely the simple cubic lattice (because it is an alternative lattice) with the aim of elucidating the possibility of the existence of other (nonstructural) phase transitions in it by using for this purpose the Hubbard model for electrons with half-filled ns-bands and preliminarily transforming the initial electronic system into an electron-hole system by means of the known Shiba operators (applicable only to alternative lattices). This transformation leads to the fact that, in the new system of fermions, instead of the former repulsion, there is an attraction between electrons and holes. Elementary excitations of this new system are bound boson pairs—excitons. This system of fermions has been quantitatively analyzed by jointly using the equation-of-motion method and the direct algebraic method. The numerical integration of the analytically exact transcendental equations derived from the first principles for alternative (one-, two-, and three-dimensional) lattices has demonstrated that, in systems of two-species (electrons + hole) fermions, temperature-induced metal-insulator phase transitions of the Mott type are actually possible. Moreover, all these crystals are in fact excitonic insulators. This conclusion is in complete agreement with the analytically exact calculations of the ground state of a one-dimensional crystal (with half-filled bands), which were performed by Lieb and Wu with the aim to find out the Mott insulator-metal transition of another type.

Depolarization current relaxation process of insulating dielectrics after corona poling under different charging conditions

Directory of Open Access Journals (Sweden)

J. W. Zhang

2017-10-01

Full Text Available As an insulating dielectric, polyimide is favorable for the application of optoelectronics, electrical insulation system in electric power industry, insulating, and packaging materials in space aircraft, due to its excellent thermal, mechanical and electrical insulating stability. The charge storage profile of such insulating dielectric is utmost important to its application, when it is exposed to electron irradiation, high voltage corona discharge or other treatments. These treatments could induce changes in physical and chemical properties of treated samples. To investigate the charge storage mechanism of the insulating dielectrics after high-voltage corona discharge, the relaxation processes responsible for corona charged polyimide films under different poling conditions were analyzed by the Thermally Stimulated Discharge Currents method (TSDC. In the results of thermal relaxation process, the appearance of various peaks in TSDC spectra provided a deep insight into the molecular status in the dielectric material and reflected stored space charge relaxation process in the insulating polymers after corona discharge treatments. Furthermore, the different space charge distribution status under various poling temperature and different discharge voltage level were also investigated, which could partly reflect the influence of the ambiance condition on the functional dielectrics after corona poling.

Depolarization current relaxation process of insulating dielectrics after corona poling under different charging conditions

Science.gov (United States)

Zhang, J. W.; Zhou, T. C.; Wang, J. X.; Yang, X. F.; Zhu, F.; Tian, L. M.; Liu, R. T.

2017-10-01

As an insulating dielectric, polyimide is favorable for the application of optoelectronics, electrical insulation system in electric power industry, insulating, and packaging materials in space aircraft, due to its excellent thermal, mechanical and electrical insulating stability. The charge storage profile of such insulating dielectric is utmost important to its application, when it is exposed to electron irradiation, high voltage corona discharge or other treatments. These treatments could induce changes in physical and chemical properties of treated samples. To investigate the charge storage mechanism of the insulating dielectrics after high-voltage corona discharge, the relaxation processes responsible for corona charged polyimide films under different poling conditions were analyzed by the Thermally Stimulated Discharge Currents method (TSDC). In the results of thermal relaxation process, the appearance of various peaks in TSDC spectra provided a deep insight into the molecular status in the dielectric material and reflected stored space charge relaxation process in the insulating polymers after corona discharge treatments. Furthermore, the different space charge distribution status under various poling temperature and different discharge voltage level were also investigated, which could partly reflect the influence of the ambiance condition on the functional dielectrics after corona poling.

MHD convective flow through porous medium in a horizontal channel with insulated and impermeable bottom wall in the presence of viscous dissipation and Joule heating

Directory of Open Access Journals (Sweden)

K.V.S. Raju

2014-06-01

Full Text Available This paper deals with a steady MHD forced convective flow of a viscous fluid of finite depth in a saturated porous medium over a fixed horizontal channel with thermally insulated and impermeable bottom wall in the presence of viscous dissipation and joule heating. The governing equations are solved in the closed form and the exact solutions are obtained for velocity and temperature distributions when the temperatures on the fixed bottom and on the free surface are prescribed. The expressions for flow rate, mean velocity, temperature, mean temperature, mean mixed temperature in the flow region and the Nusselt number on the free surface have been obtained. The cases of large and small values of porosity coefficients have been obtained as limiting cases. Further, the cases of small depth (shallow fluid and large depth (deep fluid are also discussed. The results are presented and discussed with the help of graphs.

Self-Healing Wire Insulation

Science.gov (United States)

Parrish, Clyde F. (Inventor)

2012-01-01

A self-healing system for an insulation material initiates a self-repair process by rupturing a plurality of microcapsules disposed on the insulation material. When the plurality of microcapsules are ruptured, reactants within the plurality of microcapsules react to form a replacement polymer in a break of the insulation material. This self-healing system has the ability to repair multiple breaks in a length of insulation material without exhausting the repair properties of the material.

Axial grazing collisions with insulator surfaces

Energy Technology Data Exchange (ETDEWEB)

Gravielle, M.S. [Instituto de Astronomia y Fisica del Espacio (IAFE), Consejo Nacional de Investigaciones Cientificas y Tecnicas, Casilla de Correo 67, Sucursal 28, 1428 Buenos Aires (Argentina) and Departamento de Fisica, FCEN, Universidad de Buenos Aires (Argentina)]. E-mail: msilvia@iafe.uba.ar; Miraglia, J.E. [Instituto de Astronomia y Fisica del Espacio (IAFE), Consejo Nacional de Investigaciones Cientificas y Tecnicas, Casilla de Correo 67, Sucursal 28, 1428 Buenos Aires (Argentina); Departamento de Fisica, FCEN, Universidad de Buenos Aires (Argentina)

2007-05-15

Electron capture and emission processes from insulator surfaces produced by grazing impact of fast ions are investigated under axial incidence conditions. For crystal surfaces we develop a model based on distorted wave methods, which allows us to express the coherent transition amplitude along the projectile path as a sum of atomic amplitudes, each one associated with a different lattice site. The method is applied to 100 keV protons colliding with LiF surfaces. For electron transitions from a given initial crystal state, the probabilities display strong interference effects as a function of the crystal orientation. But the interference patterns disappear when these partial probabilities are added to derive the total probability from the surface band.

Axial grazing collisions with insulator surfaces

International Nuclear Information System (INIS)

Gravielle, M.S.; Miraglia, J.E.

2007-01-01

Electron capture and emission processes from insulator surfaces produced by grazing impact of fast ions are investigated under axial incidence conditions. For crystal surfaces we develop a model based on distorted wave methods, which allows us to express the coherent transition amplitude along the projectile path as a sum of atomic amplitudes, each one associated with a different lattice site. The method is applied to 100 keV protons colliding with LiF surfaces. For electron transitions from a given initial crystal state, the probabilities display strong interference effects as a function of the crystal orientation. But the interference patterns disappear when these partial probabilities are added to derive the total probability from the surface band

Optimization of the vacuum insulator stack of the MIG pulsed power generator

International Nuclear Information System (INIS)

Khamzakhan, G; Chaikovsky, S A

2014-01-01

The MIG multi-purpose pulsed power machine is intended to generate voltage pulses of amplitude up to 6 MV with electron-beam loads and current pulses of amplitude up to 2.5 MA and rise time '00 ns with inductive loads like Z pinches. The MIG generator is capable of producing a peak power of 2.5 TW. Its water transmission line is separated from the vacuum line by an insulator stack. In the existing design of the insulator, some malfunctions have been detected. The most serious problems revealed are the vacuum surface flashover occurring before the current peaks and the deep discharge traces on the water-polyethylene interface of the two rings placed closer to the ground. A comprehensive numerical simulation of the electric field distribution in the insulator of the MIG generator has been performed. It has been found that the chief drawbacks are nonuniform voltage grading across the insulator rings and significant enhancement of the electric field at anode triple junctions. An improved design of the insulator stack has been developed. It is expected that the proposed modification that requires no rearrangement of either the water line or the load-containing vacuum chamber will provide higher electric strength of the insulator

Wide gap Chern Mott insulating phases achieved by design

Science.gov (United States)

Guo, Hongli; Gangopadhyay, Shruba; Köksal, Okan; Pentcheva, Rossitza; Pickett, Warren E.

2017-12-01

Quantum anomalous Hall insulators, which display robust boundary charge and spin currents categorized in terms of a bulk topological invariant known as the Chern number (Thouless et al Phys. Rev. Lett. 49, 405-408 (1982)), provide the quantum Hall anomalous effect without an applied magnetic field. Chern insulators are attracting interest both as a novel electronic phase and for their novel and potentially useful boundary charge and spin currents. Honeycomb lattice systems such as we discuss here, occupied by heavy transition-metal ions, have been proposed as Chern insulators, but finding a concrete example has been challenging due to an assortment of broken symmetry phases that thwart the topological character. Building on accumulated knowledge of the behavior of the 3d series, we tune spin-orbit and interaction strength together with strain to design two Chern insulator systems with bandgaps up to 130 meV and Chern numbers C = -1 and C = 2. We find, in this class, that a trade-off between larger spin-orbit coupling and strong interactions leads to a larger gap, whereas the stronger spin-orbit coupling correlates with the larger magnitude of the Hall conductivity. Symmetry lowering in the course of structural relaxation hampers obtaining quantum anomalous Hall character, as pointed out previously; there is only mild structural symmetry breaking of the bilayer in these robust Chern phases. Recent growth of insulating, magnetic phases in closely related materials with this orientation supports the likelihood that synthesis and exploitation will follow.

Quantum Electronic Matter in Two Dimensions

Energy Technology Data Exchange (ETDEWEB)

Eisenstein, James [California Inst. of Technology (CalTech), Pasadena, CA (United States)

2015-01-27

Most often, the electrical properties of a material are described as either "conducting" or "insulating". Copper, everyone knows, is a good conductor. It is the foundation of the electrical infrastructure of the nation. Glass, on the other hand, is an excellent insulator. But do these two words describe all the possibilities? The answer is emphatically no, and the basic subject of the research funded by this grant is aimed at fleshing out a more complete description of the electrical properties of materials. Many people are aware that there are also special materials called superconductors. A superconductor (e.g. aluminum when cooled to very low temperatures) is like a regular conductor except that it conducts electricity with no energy loss at all. Ordinary metals get hot when current flows through them; witness the toaster in your kitchen. In a superconductor something very special is going on: The electrons in the metal don't behave individually as they do in an ordinary conductor. Instead they act collectively. It is this collective aspect that makes superconductors so interesting to physicists. So now we have metals, insulators and superconductors. Is there anything else? We now know the answer is yes. In this research we examine special conducting materials, ones in which the mobile electrons are confined to move on a plane surface (as opposed to motion in all three directions). Examples of such "2D" materials include electrons confined to the interface between two otherwise insulating materials (as in the so-called "semiconductor heterostructures" used here) and the single atomic layer of carbon atoms now known as "graphene". Materials like these are not just museum curiosities; each of the billions of transistors in every smart-phone has a 2D electron system in it. In the work supported by this grant, the focus is on both collective conducting states in semiconductor heterostructures and on the conducting properties of graphene and its few

Insulator-semiconductor interface fixed charges in AlGaN/GaN metal-insulator-semiconductor devices with Al2O3 or AlTiO gate dielectrics

Science.gov (United States)

Le, Son Phuong; Nguyen, Duong Dai; Suzuki, Toshi-kazu

2018-01-01

We have investigated insulator-semiconductor interface fixed charges in AlGaN/GaN metal-insulator-semiconductor (MIS) devices with Al2O3 or AlTiO (an alloy of Al2O3 and TiO2) gate dielectrics obtained by atomic layer deposition on AlGaN. Analyzing insulator-thickness dependences of threshold voltages for the MIS devices, we evaluated positive interface fixed charges, whose density at the AlTiO/AlGaN interface is significantly lower than that at the Al2O3/AlGaN interface. This and a higher dielectric constant of AlTiO lead to rather shallower threshold voltages for the AlTiO gate dielectric than for Al2O3. The lower interface fixed charge density also leads to the fact that the two-dimensional electron concentration is a decreasing function of the insulator thickness for AlTiO, whereas being an increasing function for Al2O3. Moreover, we discuss the relationship between the interface fixed charges and interface states. From the conductance method, it is shown that the interface state densities are very similar at the Al2O3/AlGaN and AlTiO/AlGaN interfaces. Therefore, we consider that the lower AlTiO/AlGaN interface fixed charge density is not owing to electrons trapped at deep interface states compensating the positive fixed charges and can be attributed to a lower density of oxygen-related interface donors.

Simulation of Heating of an Oil-Cooled Insulated Gate Bipolar Transistors Converter Model

National Research Council Canada - National Science Library

Ovrebo, Gregory

2004-01-01

I used SolidWorks a three-dimensional modeling software, and FloWorks, a fluid dynamics analysis tool, to simulate oil flow and heat transfer in a heat sink structure attached to three insulated gate bipolar transistors...

Importance of space-time fluctuations and non-linearities for the transport inside insulating glasses

International Nuclear Information System (INIS)

Ladieu, F.

2003-07-01

This work deals with transport in insulating glasses. In such solids, the discrete translational symmetry is lost, which means that the plane wave analysis is not a priori the right 'starting point'. As a result, the transport is more difficult to handle, and a huge amount of works have been devoted to many aspects of transport in disordered systems, especially since the seventies. Here we focus on three specific questions: (i) the heat transport in glasses submitted to micro-beams and the associated irreversible vaporization; (ii) the electronic d.c. transport, below 1 Kelvin, in Mott-Anderson insulators, i.e. in 'electron glasses' where both disorder and electron-electron interactions are relevant; (iii) the low frequency dielectric constant in 'structural glasses' (i.e. 'ordinary glasses') which, below 1 Kelvin, is both universal (i.e. independent on the chemical composition) and very different of that of crystals. For each topic, we present both original experiments and the new theoretical concepts that we have elaborated so as to understand the main experimental features. Eventually, it appears that, in any case, transport in insulating glasses is strongly dominated by quite a small part of the 'glass-applied field' ensemble and that the nonlinear response is a relevant tool to get informations on this 'sub-part' which dominates the transport in the whole system. (author)

Specular Andreev reflection in thin films of topological insulators

Science.gov (United States)

Majidi, Leyla; Asgari, Reza

2016-05-01

We theoretically reveal the possibility of specular Andreev reflection in a thin film topological insulator normal-superconductor (N/S) junction in the presence of a gate electric field. The probability of specular Andreev reflection increases with the electric field, and electron-hole conversion with unit efficiency happens in a wide experimentally accessible range of the electric field. We show that perfect specular Andreev reflection can occur for all angles of incidence with a particular excitation energy value. In addition, we find that the thermal conductance of the structure displays exponential dependence on the temperature. Our results reveal the potential of the proposed topological insulator thin-film-based N/S structure for the realization of intraband specular Andreev reflection.

RADLAC II/SMILE performance with a magnetically insulated voltage adder

International Nuclear Information System (INIS)

Shope, S.L.; Mazarakis, M.G.; Frost, C.A.; Crist, C.E.; Poukey, J.W.; Prestwich, K.R.; Turman, B.N.; Struve, K.; Welch, D.

1991-01-01

A 12.5-m long Self Magnetically Insulate Transmission LinE (SMILE) that sums the voltages of 8, 2 -MV pulse forming lines was installed in the RADLAC-II linear induction accelerator. The magnetic insulation criteria was calculated using parapotential flow theory and found to agree with MAGIC simulations. High quality annular beams with β perpendicular ≤ 0.1 and a radius r b < 2 cm were measured for currents of 50-100-kA extracted from a magnetic immersed foilless diode. These parameters were achieved with 11 to 15-MV accelerating voltages and 6 to 16-kG diode magnetic field. The experimental results exceeded the design expectations and are in good agreement with code simulations

A dosemeter with a metal-insulator-semiconductor structure

International Nuclear Information System (INIS)

Digoy, J.-L.

1973-01-01

Description is given of a semiconducting device for measuring irradiation doses, this device being a Mosfet structure, field effect and insulated-gate device of revolution, with a cylindrical effective surface and ring-shaped source and drain. This can be applied to the measurement of doses up to 10 4 rads, for radiations of a few keV, in the field of in-vivo biology, in a flowing fluid [fr

Advances in Thermal Insulation. Vacuum Insulation Panels and Thermal Efficiency to Reduce Energy Usage in Buildings

Energy Technology Data Exchange (ETDEWEB)

Thorsell, Thomas

2012-07-01

procedure incorporates specific steps exposing the wall to different climate conditions, ranging from cold and dry to hot and humid, with and without a pressure gradient. This study showed that air infiltration alone might decrease the thermal resistance of a residential wall by 15 %, more for industrial walls. Results from the research underpin a discussion concerning the importance of a holistic approach to building design if we are to meet the challenge of energy savings and sustainability. Thermal insulation efficiency is a main concept used throughout, and since it measures utilization it is a partial measure of sustainability. It is therefore proposed as a necessary design parameter in addition to a performance indicator when designing building envelopes. The thermal insulation efficiency ranges from below 50 % for a wood stud wall poorly designed with incorporated VIP, while an optimized design with VIP placed in an uninterrupted external layer shows an efficiency of 99 %, almost perfect. Thermal insulation efficiency reflects the measured wall performance full scale test, thus indicating efficiency under varied environmental loads: heat, moisture and pressure. The building design must be as a system, integrating all the subsystems together to function in concert. New design methodologies must be created along with new, more reliable and comprehensive measuring, testing and integrating procedures. New super insulators are capable of reducing energy usage below zero energy in buildings. It would be a shame to waste them by not taking care of the rest of the system. This thesis details the steps that went into this study and shows how this can be done Key words: Vacuum insulation panels, VIP, serpentine edge, thermal bridge, composite film, gas diffusion, defect dominated, holistic approach, building enclosure, integrated testing and modeling, energy equivalent, field performance, air flow, thermal insulation efficiency.

A quantized microwave quadrupole insulator with topologically protected corner states

Science.gov (United States)

Peterson, Christopher W.; Benalcazar, Wladimir A.; Hughes, Taylor L.; Bahl, Gaurav

2018-03-01

The theory of electric polarization in crystals defines the dipole moment of an insulator in terms of a Berry phase (geometric phase) associated with its electronic ground state. This concept not only solves the long-standing puzzle of how to calculate dipole moments in crystals, but also explains topological band structures in insulators and superconductors, including the quantum anomalous Hall insulator and the quantum spin Hall insulator, as well as quantized adiabatic pumping processes. A recent theoretical study has extended the Berry phase framework to also account for higher electric multipole moments, revealing the existence of higher-order topological phases that have not previously been observed. Here we demonstrate experimentally a member of this predicted class of materials—a quantized quadrupole topological insulator—produced using a gigahertz-frequency reconfigurable microwave circuit. We confirm the non-trivial topological phase using spectroscopic measurements and by identifying corner states that result from the bulk topology. In addition, we test the critical prediction that these corner states are protected by the topology of the bulk, and are not due to surface artefacts, by deforming the edges of the crystal lattice from the topological to the trivial regime. Our results provide conclusive evidence of a unique form of robustness against disorder and deformation, which is characteristic of higher-order topological insulators.

Potential of Hollow Glass Microsphere as Cement Replacement for Lightweight Foam Concrete on Thermal Insulation Performance

Directory of Open Access Journals (Sweden)

Shahidan Shahiron

2017-01-01

Full Text Available Global warming can be defined as a gradual increase in the overall temperature of the earth’s atmosphere. A lot of research work has been carried out to reduce that heat inside the residence such as the used of low density products which can reduce the self-weight, foundation size and construction costs. Foamed concrete it possesses high flow ability, low self-weight, minimal consumption of aggregate, controlled low strength and excellent thermal insulation properties. This study investigate the characteristics of lightweight foamed concrete where Portland cement (OPC was replaced by hollow glass microsphere (HGMs at 0%, 3%, 6%, 9% by weight. The density of wet concrete is 1000 kg/m3 were tested with a ratio of 0.55 for all water binder mixture. Lightweight foamed concrete hollow glass microsphere (HGMs produced were cured by air curing and water curing in tank for 7, 14 and 28 days. A total of 52 concrete cubes of size 100mm × 100mm × 100mm and 215mm × 102.5mm × 65mm were produced. Furthermore, Scanning Electron Microscope (SEM and X-ray fluorescence (XRF were carried out to study the chemical composition and physical properties of crystalline materials in hollow glass microspheres. The experiments involved in this study are compression strength, water absorption test, density and thermal insulation test. The results show that the compressive strength of foamed concrete has reached the highest in 3% of hollow glass microsphere with less water absorption and less of thermal insulation. As a conclusion, the quantity of hollow glass microsphere plays an important role in determining the strength and water absorption and also thermal insulation in foamed concrete and 3% hollow glass microspheres as a replacement for Portland cement (OPC showed an optimum value in this study as it presents a significant effect than other percentage.

The effects of illumination on deep levels observed in as-grown and low-energy electron irradiated high-purity semi-insulating 4H-SiC

Science.gov (United States)

Alfieri, G.; Knoll, L.; Kranz, L.; Sundaramoorthy, V.

2018-05-01

High-purity semi-insulating 4H-SiC can find a variety of applications, ranging from power electronics to quantum computing applications. However, data on the electronic properties of deep levels in this material are scarce. For this reason, we present a deep level transient spectroscopy study on HPSI 4H-SiC substrates, both as-grown and irradiated with low-energy electrons (to displace only C-atoms). Our investigation reveals the presence of four deep levels with activation energies in the 0.4-0.9 eV range. The concentrations of three of these levels increase by at least one order of magnitude after irradiation. Furthermore, we analyzed the behavior of these traps under sub- and above-band gap illumination. The nature of the traps is discussed in the light of the present data and results reported in the literature.

Fabrication of insulator nanocapillaries from diatoms

International Nuclear Information System (INIS)

Bereczky, R.J.; Tokesi, K.

2006-01-01

Complete text of publication follows. Diatoms are unicellular microscopic organisms with silicon-dioxide based skeleton enveloped with an organic material, which composes essentially polysaccharides and proteins (see Fig. 1a.). As it was shown, the valva of the diatoms build up almost from clean silicondioxide [1]. Therefore, removing the organic compounds from the diatom, we can have in our hand an ideal, about 100 μ m-sized, and almost cylindrical shaped insulating nanostructure. There are various techniques available to disembarrass the diatom from its organic compounds. We used the so called hydrogen peroxide method. The advantageous properties of this method are the followings: a) this is one of the fastest procedures among the possible methods, b) do not require special equipment, c) cheap, and last but not least it is less harmful for health compared to other methods. This procedure can be an alternative way of the fabrication of insulator nanocapillaries. In this case the preparation of the nanocapillaries is simple and quick. Moreover, we do not need to invest expensive special techniques, (like micromachining-, electrochemical etching technique, moulding process etc) as it was necessary for the case of previously developed method producing insulator nanocapillaries [2,3]. Fig. 1b and Fig. 1c. show the scanning electron micrograph of the skeleton of the diatoms. The size of the cylindrical holes are roughly 200 nm (see Fig. 1c). (author)

Heat insulation support device

International Nuclear Information System (INIS)

Takahashi, Hiroyuki; Koda, Tomokazu; Motojima, Osamu; Yamamoto, Junya.

1994-01-01

The device of the present invention comprises a plurality of heat insulation legs disposed in a circumferential direction. Each of the heat insulative support legs has a hollow shape, and comprises an outer column and an inner column as support structures having a heat insulative property (heat insulative structure), and a thermal anchor which absorbs compulsory displacement by a thin flat plate (displacement absorber). The outer column, the thermal anchor and the inner column are connected by a support so as to offset the positional change of objects to be supported due to shrinkage when they are shrunk. In addition, the portion between the superconductive coils as the objects to be supported and the inner column is connected by the support. The superconductive thermonuclear device is entirely contained in a heat insulative vacuum vessel, and the heat insulative support legs are disposed on a lower lid of the heat insulative vacuum vessel. With such a constitution, they are strengthened against lateral load and buckling, thereby enabling to reduce the amount of heat intrusion while keeping the compulsory displacement easy to be absorbed. (I.N.)

Economically optimal thermal insulation

Energy Technology Data Exchange (ETDEWEB)

Berber, J.

1978-10-01

Exemplary calculations to show that exact adherence to the demands of the thermal insulation ordinance does not lead to an optimal solution with regard to economics. This is independent of the mode of financing. Optimal thermal insulation exceeds the values given in the thermal insulation ordinance.

Long-wavelength instability of periodic flows and whistler waves in electron magnetohydrodynamics

International Nuclear Information System (INIS)

Lakhin, V.P.; Levchenko, V.D.

2003-01-01

Stability analysis of periodic flows and whistlers with respect to long-wavelength perturbations within the framework of dissipative electron magnetohydrodynamics (EMHD) based on two-scale asymptotic expansion technique is presented. Several types of flows are considered: two-dimensional Kolmogorov-like flow, helical flow, and anisotropic helical flow. It is shown hat the destabilizing effect on the long-wavelength perturbations is due to either the negative resistivity effect related to flow anisotropy or α-like effect to its micro helicity. The criteria of the corresponding instabilities are obtained. Numerical simulations of EMHD equations with the initial conditions corresponding to two types of periodic flows are presented. (author)

Total dose hardening of buried insulator in implanted silicon-on-insulator structures

International Nuclear Information System (INIS)

Mao, B.Y.; Chen, C.E.; Pollack, G.; Hughes, H.L.; Davis, G.E.

1987-01-01

Total dose characteristics of the buried insulator in implanted silicon-on-insulator (SOI) substrates have been studied using MOS transistors. The threshold voltage shift of the parasitic back channel transistor, which is controlled by charge trapping in the buried insulator, is reduced by lowering the oxygen dose as well as by an additional nitrogen implant, without degrading the front channel transistor characteristics. The improvements in the radiation characteristics of the buried insulator are attributed to the decrease in the buried oxide thickness or to the presence of the interfacial oxynitride layer formed by the oxygen and nitrogen implants

Insulation vacuum and beam vacuum overpressure release

CERN Document Server

Parma, V

2009-01-01

There is evidence that the incident of 19th September caused a high pressure build-up inside the cryostat insulation vacuum which the existing overpressure devices could not contain. As a result, high longitudinal forces acting on the insulation vacuum barriers developed and broke the floor and the floor fixations of the SSS with vacuum barriers. The consequent large longitudinal displacements of the SSS damaged chains of adjacent dipole cryo-magnets. Estimates of the helium mass flow and the pressure build- up experienced in the incident are presented together with the pressure build-up for an even more hazardous event, the Maximum Credible Incident (MCI). The strategy of limiting the maximum pressure by the installation of addition pressure relieve devices is presented and discussed. Both beam vacuum lines were ruptured during the incident in sector 3-4 giving rise to both mechanical damage and pollution of the system. The sequence, causes and effects of this damage will be briefly reviewed. We will then an...

Survey of thermal insulation systems

International Nuclear Information System (INIS)

Kinoshita, Izumi

1983-01-01

Better thermal insulations have been developed to meet the growing demands of industry, and studies on thermal insulation at both high temperature and low temperature have been widely performed. The purpose of this survey is to summarize data on the performances and characteristics of thermal insulation materials and thermal insulation structures (for instance, gas cooled reactors, space vehicles and LNG storage tanks), and to discuss ravious problems regarding the design of thermal insulation structures of pool-type LMFBRs. (author)

Detection of UV Pulse from Insulators and Application in Estimating the Conditions of Insulators

Science.gov (United States)

Wang, Jingang; Chong, Junlong; Yang, Jie

2014-10-01

Solar radiation in the band of 240-280 nm is absorbed by the ozone layer in the atmosphere, and corona discharges from high-voltage apparatus emit in air mainly in the 230-405 nm range of ultraviolet (UV), so the band of 240-280 nm is called UV Solar Blind Band. When the insulators in a string deteriorate or are contaminated, the voltage distribution along the string will change, which causes the electric fields in the vicinity of insulators change and corona discharge intensifies. An UV pulse detection method to check the conditions of insulators is presented based on detecting the UV pulse among the corona discharge, then it can be confirmed that whether there exist faulty insulators and whether the surface contamination of insulators is severe for the safe operation of power systems. An UV-I Insulator Detector has been developed, and both laboratory tests and field tests have been carried out which demonstrates the practical viability of UV-I Insulator Detector for online monitoring.

Thermal insulation

International Nuclear Information System (INIS)

Pinsky, G.P.

1977-01-01

Thermal insulation for vessels and piping within the reactor containment area of nuclear power plants is disclosed. The thermal insulation of this invention can be readily removed and replaced from the vessels and piping for inservice inspection, can withstand repeated wettings and dryings, and can resist high temperatures for long periods of time. 4 claims, 3 figures

Electronic Structure of the Metastable Epitaxial Rock-Salt SnSe {111} Topological Crystalline Insulator

Directory of Open Access Journals (Sweden)

Wencan Jin

2017-10-01

Full Text Available Topological crystalline insulators have been recently predicted and observed in rock-salt structure SnSe {111} thin films. Previous studies have suggested that the Se-terminated surface of this thin film with hydrogen passivation has a reduced surface energy and is thus a preferred configuration. In this paper, synchrotron-based angle-resolved photoemission spectroscopy, along with density functional theory calculations, is used to demonstrate that a rock-salt SnSe {111} thin film epitaxially grown on Bi_{2}Se_{3} has a stable Sn-terminated surface. These observations are supported by low-energy electron diffraction (LEED intensity-voltage measurements and dynamical LEED calculations, which further show that the Sn-terminated SnSe {111} thin film has undergone a surface structural relaxation of the interlayer spacing between the Sn and Se atomic planes. In sharp contrast to the Se-terminated counterpart, the observed Dirac surface state in the Sn-terminated SnSe {111} thin film is shown to yield a high Fermi velocity, 0.50×10^{6}  m/s, which suggests a potential mechanism of engineering the Dirac surface state of topological materials by tuning the surface configuration.

Application of magnetically insulated transmission lines for high current, high voltage electron beam accelerators

International Nuclear Information System (INIS)

Shope, S.L.; Mazarakis, M.G.; Frost, C.A.; Poukey, J.W.; Turman, B.N.

1993-01-01

Self Magnetically Insulated Transmission Lines (MITL) adders have been used successfully in a number of Sandia accelerators such as HELIA, HERMES III, and SABRE. Most recently the authors used a MITL adder in the RADLAC/SMILE electron beam accelerator to produce high quality, small radius (r b < 2 cm), 11 to 15 MeV, 50 to 100-kA beams with a small transverse velocity v perpendicular/c = β perpendicular ≤ 0.1. In RADLAC/SMILE, a coaxial MITL passed through the eight, 2 MV vacuum envelopes. The MITL summed the voltages of all eight feeds to a single foilless diode. The experimental results are in good agreement with code simulations. The authors' success with the MITL technology led them to investigate the application to higher energy accelerator designs. They have a conceptual design for a cavity-fed MITL that sums the voltages from 100 identical, inductively-isolated cavities. Each cavity is a toroidal structure that is driven simultaneously by four 8-ohm pulse-forming lines, providing a 1-MV voltage pulse to each of the 100 cavities. The point design accelerator is 100 MV, 500 kA, with a 30-50-ns FWHM output pulse

Application of Magnetically Insulated Transmission Lines for high current, high voltage electron beam accelerators

International Nuclear Information System (INIS)

Shope, S.L.; Mazarakis, M.G.; Frost, C.A.; Poukey, J.W.; Turman, B.N.

1991-01-01

Self Magnetically Insulated Transmission Lines (MITL) adders have been used successfully in a number of Sandia accelerators such as HELIA, HERMES III, and SABRE. Most recently we used at MITL adder in the RADLAC/SMILE electron beam accelerator to produce high quality, small radius (r ρ < 2 cm), 11 to 15 MeV, 50 to 100-kA beams with a small transverse velocity v perpendicular/c = β perpendicular ≤ 0.1. In RADLAC/SMILE, a coaxial MITL passed through the eight, 2 MV vacuum envelopes. The MITL summed the voltages of all eight feeds to a single foilless diode. The experimental results are in good agreement with code simulations. Our success with the MITL technology led us to investigate the application to higher energy accelerator designs. We have a conceptual design for a cavity-fed MITL that sums the voltages from 100 identical, inductively-isolated cavities. Each cavity is a toroidal structure that is driven simultaneously by four 8-ohm pulse-forming lines, providing a 1-MV voltage pulse to each of the 100 cavities. The point design accelerator is 100 MV, 500 kA, with a 30--50 ns FWHM output pulse. 10 refs

Application of magnetically insulated transmission lines for high current, high voltage electron beam accelerators

Science.gov (United States)

Shope, S. L.; Mazarakis, M. G.; Frost, C. A.; Poukey, J. W.; Turman, B. N.

Self Magnetically Insulated Transmission Lines (MITL) adders were used successfully in a number of Sandia accelerators such as HELIA, HERMES III, and SABRE. Most recently we used at MITL adder in the RADLAC/SMILE electron beam accelerator to produce high quality, small radius (r(sub rho) less than 2 cm), 11 - 15 MeV, 50 - 100-kA beams with a small transverse velocity v(perpendicular)/c = beta(perpendicular) less than or equal to 0.1. In RADLAC/SMILE, a coaxial MITL passed through the eight, 2 MV vacuum envelopes. The MITL summed the voltages of all eight feeds to a single foilless diode. The experimental results are in good agreement with code simulations. Our success with the MITL technology led us to investigate the application to higher energy accelerator designs. We have a conceptual design for a cavity-fed MITL that sums the voltages from 100 identical, inductively-isolated cavities. Each cavity is a toroidal structure that is driven simultaneously by four 8-ohm pulse-forming lines, providing a 1-MV voltage pulse to each of the 100 cavities. The point design accelerator is 100 MV, 500 kA, with a 30 - 50 ns FWHM output pulse.

Wrapped Multilayer Insulation

Science.gov (United States)

Dye, Scott A.

2015-01-01

New NASA vehicles, such as Earth Departure Stage (EDS), Orion, landers, and orbiting fuel depots, need improved cryogenic propellant transfer and storage for long-duration missions. Current cryogen feed line multilayer insulation (MLI) performance is 10 times worse per area than tank MLI insulation. During each launch, cryogenic piping loses approximately 150,000 gallons (equivalent to $300,000) in boil-off during transfer, chill down, and ground hold. Quest Product Development Corp., teaming with Ball Aerospace, developed an innovative advanced insulation system, Wrapped MLI (wMLI), to provide improved thermal insulation for cryogenic feed lines. wMLI is high-performance multilayer insulation designed for cryogenic piping. It uses Quest's innovative discrete-spacer technology to control layer spacing/ density and reduce heat leak. The Phase I project successfully designed, built, and tested a wMLI prototype with a measured heat leak 3.6X lower than spiral-wrapped conventional MLI widely used for piping insulation. A wMLI prototype had a heat leak of 7.3 W/m2, or 27 percent of the heat leak of conventional MLI (26.7 W/m2). The Phase II project is further developing wMLI technology with custom, molded polymer spacers and advancing the product toward commercialization via a rigorous testing program, including developing advanced vacuuminsulated pipe for ground support equipment.

Electron source with the explosion-emission cathode on the base of Bi-Sr-Ca-Cu-O ceramics

International Nuclear Information System (INIS)

Korenev, S.A.

1996-01-01

Two electron sources with explosion-emission cathode on the basis of Bi 2 Sr 2 Ca 2 Cu 3 O x ceramics are described. The scheme of electron gun for formation of electron beams of microsecond length consists of vacuum chamber, flow-passage insulator and cathode with ceramic emitter. The pulse duration by 600 kV voltage equals 1 μs. The split anode, two short magnetic lenses and Rogovsky belt are used for production of low-energy beams. The nanosecond electrical beams with energy of 10-25 keV were produced through this electron source. The beam cross-sectional non-uniformity did not exceed 5% by the beam diameter of 1 cm. 11 refs., 4 figs

Metal-insulator transition in SrTi1−xVxO3 thin films

International Nuclear Information System (INIS)

Gu, Man; Wolf, Stuart A.; Lu, Jiwei

2013-01-01

Epitaxial SrTi 1−x V x O 3 (0 ≤ x ≤ 1) thin films were grown on (001)-oriented (LaAlO 3 ) 0.3 (Sr 2 AlTaO 6 ) 0.7 (LSAT) substrates using the pulsed electron-beam deposition technique. The transport study revealed a temperature driven metal-insulator transition (MIT) at 95 K for x = 0.67. The films with higher vanadium concentration (x > 0.67) were metallic corresponding to a Fermi liquid system. In the insulating phase (x < 0.67), the resistivity behavior was governed by Mott's variable range hopping mechanism. The possible mechanisms for the induced MIT are discussed, including the effects of electron correlation, lattice distortion, and Anderson localization

Heat and mass transfer on a MHD third grade fluid with partial slip flow past an infinite vertical insulated porous plate in a porous medium

International Nuclear Information System (INIS)

Baoku, I.G.; Olajuwon, B.I.; Mustapha, A.O.

2013-01-01

Highlights: ► We model the flow of a MHD third grade fluid, heat and mass transfer in a porous medium with partial slip flow regime. ► We examine the effects of pertinent parameters on the velocity, temperature and species concentration distributions. ► The values momentum and thermal boundary layers increase with increasing third grade parameter β. ► The consequences of increasing the permeability parameter m and partial slip parameter λ give rise to fluid velocity. ► The magnetic field parameter H decreases the momentum boundary layer and increases the concentration boundary layer. -- Abstract: The influence of third grade, partial slip and other thermophysical parameters on the steady flow, heat and mass transfer of viscoelastic third grade fluid past an infinite vertical insulated plate subject to suction across the boundary layer has been investigated. The space occupying the fluid is porous. The momentum equation is characterized by a highly nonlinear boundary value problem in which the order of the differential equation exceeds the number of available boundary conditions. An efficient numerical scheme of midpoint technique with Richardson’s extrapolation is employed to solve the governing system of coupled nonlinear equations of momentum, energy and concentration. Numerical calculations were carried out for different values of various interesting non-dimensional quantities in the slip flow regime with heat and mass transfer and were shown with the aid of figures. The values of the wall shear stress, the local rate of heat and mass transfers were obtained and tabulated. The analysis shows that as the fluid becomes more shear thickening, the momentum boundary layer decreases but the thermal boundary layer increases; the magnetic field strength is found to decrease with an increasing temperature distribution when the porous plate is insulated. The consequences of increasing the permeability parameter and Schmidt number decrease both the momentum

Calcium carbonate electronic-insulating layers improve the charge collection efficiency of tin oxide photoelectrodes in dye-sensitized solar cells

International Nuclear Information System (INIS)

Shaikh, Shoyebmohamad F.; Mane, Rajaram S.; Hwang, Yun Jeong; Joo, Oh-Shim

2015-01-01

In dye-sensitized solar cells (DSSCs), a surface passivation layer has been employed on the tin oxide (SnO 2 ) photoanodes to enhance the charge collection efficiency, and thus the power conversion efficiency. Herein, we demonstrate that the electronic-insulating layering of calcium carbonate (CaCO 3 ) can improve the charge collection efficiency in dye-sensitized solar cells designed with photoanodes. In order to evaluate the effectiveness of CaCO 3 layering, both layered and pristine SnO 2 photoanodes are characterized with regard to their structures, morphologies, and photo-electrochemical measurements. The SnO 2 -6L CaCO 3 photoanode has demonstrated as high as 3.5% power conversion efficiency; 3.5-fold greater than that of the pristine SnO 2 photoanode. The enhancement in the power conversion efficiency is corroborated with the number of the dye molecules, the passivation of surface states, a negative shift in the conduction band position, and the reduced electron recombination rate of photoelectrons following the coating of the CaCO 3 surface layer

Magnetically self-insulated transformers

International Nuclear Information System (INIS)

Novac, B.M.; Smith, I.R.; Brown, J.

2002-01-01

Magnetic insulation is the only practicable form of insulation for much equipment used in ultrahigh pulsed-power work, including transmission lines and plasma opening switches. It has not however so far been successfully exploited in the transformers that are necessarily involved, and the first proposed design that appeared more than 30 years ago raised apparently insuperable problems. The two novel arrangements for a magnetically insulated transformer described in this paper overcome the problems faced by the earlier designs and also offer considerable scope for development in a number of important areas. Theoretical justification is given for their insulating properties, and this is confirmed by proof-of-principle results obtained from a small-scale experimental prototype in which magnetic insulation was demonstrated at up to 100 kV. (author)

Molecular beam epitaxial growth of Bi{sub 2}Te{sub 3} and Sb{sub 2}Te{sub 3} topological insulators on GaAs (111) substrates: a potential route to fabricate topological insulator p-n junction

Energy Technology Data Exchange (ETDEWEB)

Zeng, Zhaoquan; Morgan, Timothy A.; Li, Chen; Hirono, Yusuke; Hu, Xian; Hawkridge, Michael E.; Benamara, Mourad; Salamo, Gregory J. [Arkansas Institute for Nanoscale Material Sciences and Engineering, University of Arkansas, Fayetteville, AR 72701 (United States); Fan, Dongsheng; Yu, Shuiqing [Arkansas Institute for Nanoscale Material Sciences and Engineering, University of Arkansas, Fayetteville, AR 72701 (United States); Department of Electrical Engineering, University of Arkansas, Fayetteville, AR 72701 (United States); Zhao, Yanfei [International Center for Quantum Materials, School of Physics, Peking University, Beijing, 100871 (China); Lee, Joon Sue [The Center for Nanoscale Science and Department of Physics, The Pennsylvania State University, University Park, PA 16802 (United States); Wang, Jian [International Center for Quantum Materials, School of Physics, Peking University, Beijing, 100871 (China); The Center for Nanoscale Science and Department of Physics, The Pennsylvania State University, University Park, PA 16802 (United States); Wang, Zhiming M. [Arkansas Institute for Nanoscale Material Sciences and Engineering, University of Arkansas, Fayetteville, AR 72701 (United States); State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054 (China); Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Science, Beijing 100083 (China)

2013-07-15

High quality Bi{sub 2}Te{sub 3} and Sb{sub 2}Te{sub 3} topological insulators films were epitaxially grown on GaAs (111) substrate using solid source molecular beam epitaxy. Their growth and behavior on both vicinal and non-vicinal GaAs (111) substrates were investigated by reflection high-energy electron diffraction, atomic force microscopy, X-ray diffraction, and high resolution transmission electron microscopy. It is found that non-vicinal GaAs (111) substrate is better than a vicinal substrate to provide high quality Bi{sub 2}Te{sub 3} and Sb{sub 2}Te{sub 3} films. Hall and magnetoresistance measurements indicate that p type Sb{sub 2}Te{sub 3} and n type Bi{sub 2}Te{sub 3} topological insulator films can be directly grown on a GaAs (111) substrate, which may pave a way to fabricate topological insulator p-n junction on the same substrate, compatible with the fabrication process of present semiconductor optoelectronic devices.

A Numerical Study on Phonon Spectral Contributions to Thermal Conduction in Silicon-on-Insulator Transistor Using Electron-Phonon Interaction Model

Energy Technology Data Exchange (ETDEWEB)

Kang, Hyung-sun; Koh, Young Ha; Jin, Jae Sik [Chosun College of Science and Technology, Gwangju (Korea, Republic of)

2017-06-15

The aim of this study is to understand the phonon transfer characteristics of a silicon thin film transistor. For this purpose, the Joule heating mechanism was considered through the electron-phonon interaction model whose validation has been done. The phonon transport characteristics were investigated in terms of phonon mean free path for the variations in the device power and silicon layer thickness from 41 nm to 177 nm. The results may be used for developing the thermal design strategy for achieving reliability and efficiency of the silicon-on-insulator (SOI) transistor, further, they will increase the understanding of heat conduction in SOI systems, which are very important in the semiconductor industry and the nano-fabrication technology.

Measurements of low density, high velocity flow by electron beam fluorescence technique

International Nuclear Information System (INIS)

Soga, Takeo; Takanishi, Masaya; Yasuhara, Michiru

1981-01-01

A low density chamber with an electron gun system was made for the measurements of low density, high velocity (high Mach number) flow. This apparatus is a continuous running facility. The number density and the rotational temperature in the underexpanding free jet of nitrogen were measured along the axis of the jet by the electron beam fluorescence technique. The measurements were carried out from the vicinity of the exit of the jet to far downstream of the first Mach disk. Rotational nonequilibrium phenomena were observed in the hypersonic flow field as well as in the shock wave (Mach disk). (author)

Modeling the pressure increase in liquid helium cryostats after failure of the insulating vacuum

Energy Technology Data Exchange (ETDEWEB)

Heidt, C.; Grohmann, S. [Karlsruhe Institute of Technology, Institute for Technical Physics, Hermann-von-Helmholtz-Platz 1, D-76344 Eggenstein-Leopoldshafen, Germany and Karlsruhe Institute of Technology, Institute for Technical Thermodynamics and Refrigeration, Engler-Bunte (Germany); Süßer, M. [Karlsruhe Institute of Technology, Institute for Technical Physics, Hermann-von-Helmholtz-Platz 1, D-76344 Eggenstein-Leopoldshafen (Germany)

2014-01-29

The pressure relief system of liquid helium cryostats requires a careful design, due to helium's low enthalpy of vaporization and due to the low operating temperature. Hazard analyses often involve the failure of the insulating vacuum in the worst-case scenario. The venting of the insulating vacuum and the implications for the pressure increase in the helium vessel, however, have not yet been fully analyzed. Therefore, the dimensioning of safety devices often requires experience and reference to very few experimental data. In order to provide a better foundation for the design of cryogenic pressure relief systems, this paper presents an analytic approach for the strongly dynamic process induced by the loss of insulating vacuum. The model is based on theoretical considerations and on differential equation modeling. It contains only few simplifying assumptions, which will be further investigated in future experiments. The numerical solutions of example calculations are presented with regard to the heat flux into the helium vessel, the helium pressure increase and the helium flow rate through the pressure relief device. Implications concerning two-phase flow and the influence of kinetic energy are discussed.

Surface electronic transport measurements: A micro multi-point probe approach

DEFF Research Database (Denmark)

Barreto, Lucas

2014-01-01

This work is mostly focused on the study of electronic transport properties of two-dimensional materials, in particular graphene and topological insulators. To study these, we have improved a unique micro multi-point probe instrument used to perform transport measurements. Not only the experimental...... quantities are extracted, such as conductivity, carrier density and carrier mobility. • A method to insulate electrically epitaxial graphene grown on metals, based on a stepwise intercalation methodology, is developed and transport measurements are performed in order to test the insulation. • We show...... a direct measurement of the surface electronic transport on a bulk topological insulator. The surface state conductivity and mobility are obtained. Apart from transport properties, we also investigate the atomic structure of the Bi2Se3(111) surface via surface x-ray diraction and low-energy electron...

Single atom anisotropic magnetoresistance on a topological insulator surface

KAUST Repository

Narayan, Awadhesh

2015-03-12

© 2015 IOP Publishing Ltd and Deutsche Physikalische Gesellschaft. We demonstrate single atom anisotropic magnetoresistance on the surface of a topological insulator, arising from the interplay between the helical spin-momentum-locked surface electronic structure and the hybridization of the magnetic adatom states. Our first-principles quantum transport calculations based on density functional theory for Mn on Bi2Se3 elucidate the underlying mechanism. We complement our findings with a two dimensional model valid for both single adatoms and magnetic clusters, which leads to a proposed device setup for experimental realization. Our results provide an explanation for the conflicting scattering experiments on magnetic adatoms on topological insulator surfaces, and reveal the real space spin texture around the magnetic impurity.

Testing electrical insulation of LCT coils and instrumentation

International Nuclear Information System (INIS)

Luton, J.N.; Ulbricht, A.R.; Ellis, J.F.; Shen, S.S.; Wilson, C.T.; Okuno, K.; Siewerdt, L.O.; Zahn, G.R.; Zichy, J.A.

1986-09-01

Three of the superconducting test coils in the Large Coil Task (LCT) use conductors cooled internally by forced flow of helium. In the other three coils, the conductors are cooled externally by a bath of helium. The coils and facility are designed for rapid discharges (dumps) at voltages up to 2.5 kV, depending on coil design. Many coil sensors are connected electrically to the conductors. These sensor leads and signal conditioning equipment also experience high voltage. High-potential tests of ground insulation were performed on all components of the International Fusion Superconducting Magnet Test Facility (IFSMTF). Coil insulation was also tested by ring-down tests that produced voltage distributions within the coils like those occurring during rapid discharge. Methods were developed to localize problem areas and to eliminate them. The effect on breakdown voltage near the Paschen minimum of magnetic fields up to 2 T was investigated

Weak antilocalization and universal conductance fluctuations in bismuth telluro-sulfide topological insulators

Energy Technology Data Exchange (ETDEWEB)

Trivedi, Tanuj, E-mail: tanuj@utexas.edu; Sonde, Sushant; Movva, Hema C. P.; Banerjee, Sanjay K., E-mail: banerjee@ece.utexas.edu [Microelectronics Research Center, The University of Texas at Austin, Austin, Texas 78758 (United States)

2016-02-07

We report on van der Waals epitaxial growth, materials characterization, and magnetotransport experiments in crystalline nanosheets of Bismuth Telluro-Sulfide (BTS). Highly layered, good-quality crystalline nanosheets of BTS are obtained on SiO{sub 2} and muscovite mica. Weak-antilocalization (WAL), electron-electron interaction-driven insulating ground state and universal conductance fluctuations are observed in magnetotransport experiments on BTS devices. Temperature, thickness, and magnetic field dependence of the transport data indicate the presence of two-dimensional surface states along with bulk conduction, in agreement with theoretical models. An extended-WAL model is proposed and utilized in conjunction with a two-channel conduction model to analyze the data, revealing a surface component and evidence of multiple conducting channels. A facile growth method and detailed magnetotransport results indicating BTS as an alternative topological insulator material system are presented.

Research on vacuum insulation for cryocables

International Nuclear Information System (INIS)

Graneau, P.

1974-01-01

Vacuum insulation, as compared with solid insulation, simplifies the construction of both resistive or superconducting cryogenic cables. The common vacuum space in the cable can furnish thermal insulation between the environment and the cryogenic coolant, provide electrical insulation between conductors, and establish thermal isolation between go- and return-coolant streams. The differences between solid and vacuum high voltage insulation are discussed, and research on the design, materials selection, and testing of vacuum insulated cryogenic cables is described

Electron collector and ion species experiments on the LION extractor ion diode

International Nuclear Information System (INIS)

Rondeau, G.; Greenly, J.B.; Hammer, D.A.; Horioka, K.; Meyerhofer, D.D.

1987-01-01

Studies of the effects of an electron collector on the electron flow in an ion diode and on diode impedance history are being done with an extractor geometry ion diode (B/sub r/ magnetic insulation field) on the LION accelerator (1.5 MV, 4Ω, 40 ns). The collector is a flux-penetrable metal protrusion on the inner radius of the anode that collects electrons. This device increases the diode operating impedance particularly during the later part of the pulse when the diode impedance collapses without the collector. In the present set of experiments, several thin wires are inserted into the anode and allowed to protrude a few millimeters into the A-K gap. These wires are damaged by the electron flow during the pulse and by measuring the length of the remaining wire, the distance of the electron layer from the anode can be inferred. The ion current density is also measured in three radial locations across the diode, giving a measure, through the Child-Langmuir law, of the effective gap spacing between the anode and the electron sheath. A simple model is proposed to account for the scaling of ion current density with the diode voltage observed in the experiment

Sound Insulation between Dwellings

DEFF Research Database (Denmark)

Rasmussen, Birgit

2011-01-01

Regulatory sound insulation requirements for dwellings exist in more than 30 countries in Europe. In some countries, requirements have existed since the 1950s. Findings from comparative studies show that sound insulation descriptors and requirements represent a high degree of diversity...... and initiate – where needed – improvement of sound insulation of new and existing dwellings in Europe to the benefit of the inhabitants and the society. A European COST Action TU0901 "Integrating and Harmonizing Sound Insulation Aspects in Sustainable Urban Housing Constructions", has been established and runs...... 2009-2013. The main objectives of TU0901 are to prepare proposals for harmonized sound insulation descriptors and for a European sound classification scheme with a number of quality classes for dwellings. Findings from the studies provide input for the discussions in COST TU0901. Data collected from 24...

Theory of the low-voltage impedance of superconductor-- p insulator--normal metal tunnel junctions

International Nuclear Information System (INIS)

Lemberger, T.R.

1984-01-01

A theory for the low-voltage impedance of a superconductor-- p insulator--normal metal tunnel junction is developed that includes the effects of charge imbalance and of quasiparticle fluctuations. A novel, inelastic, charge-imbalance relaxation process is identified that is associated with the junction itself. This new process leads to the surprising result that the charge-imbalance component of the dc resistance of a junction becomes independent of the electron-phonon scattering rate as the insulator resistance decreases

Cellular Assays for Ferredoxins: A Strategy for Understanding Electron Flow through Protein Carriers That Link Metabolic Pathways.

Science.gov (United States)

Atkinson, Joshua T; Campbell, Ian; Bennett, George N; Silberg, Jonathan J

2016-12-27

The ferredoxin (Fd) protein family is a structurally diverse group of iron-sulfur proteins that function as electron carriers, linking biochemical pathways important for energy transduction, nutrient assimilation, and primary metabolism. While considerable biochemical information about individual Fd protein electron carriers and their reactions has been acquired, we cannot yet anticipate the proportion of electrons shuttled between different Fd-partner proteins within cells using biochemical parameters that govern electron flow, such as holo-Fd concentration, midpoint potential (driving force), molecular interactions (affinity and kinetics), conformational changes (allostery), and off-pathway electron leakage (chemical oxidation). Herein, we describe functional and structural gaps in our Fd knowledge within the context of a sequence similarity network and phylogenetic tree, and we propose a strategy for improving our understanding of Fd sequence-function relationships. We suggest comparing the functions of divergent Fds within cells whose growth, or other measurable output, requires electron transfer between defined electron donor and acceptor proteins. By comparing Fd-mediated electron transfer with biochemical parameters that govern electron flow, we posit that models that anticipate energy flow across Fd interactomes can be built. This approach is expected to transform our ability to anticipate Fd control over electron flow in cellular settings, an obstacle to the construction of synthetic electron transfer pathways and rational optimization of existing energy-conserving pathways.

Design of load-to-failure tests of high-voltage insulation breaks for ITER's cryogenic network

CERN Document Server

Langeslag, S A E; Aviles Santillana, I; Sgobba, S; Foussat, A

2015-01-01

The development of new generation superconducting magnets for fusion research, such as the ITER experiment, is largely based on coils wound with so-called cable-in-conduit conductors. The concept of the cable-in-conduit conductor is based on a direct cooling principle, by supercritical helium, flowing through the central region of the conductor, in close contact with the superconducting strands. Consequently, a direct connection exists between the electrically grounded helium coolant supply line and the highly energised magnet windings. Various insulated regions, constructed out of high-voltage insulation breaks, are put in place to isolate sectors with different electrical potential. In addition to high voltages and significant internal helium pressure, the insulation breaks will experience various mechanical forces resulting from differential thermal contraction phenomena and electro-magnetic loads. Special test equipment was designed, prepared and employed to assess the mechanical reliability of the insul...

The electron energy distribution function of noble gases with flow

International Nuclear Information System (INIS)

Karditsas, P.J.

1989-01-01

The treatment of the Boltzmann equation by several investigators, for the determination of the electron energy distribution function (EEDF) in noble gases was restricted to static discharges. It is of great interest to magnetoplasmadynamic power generation to develop the Boltzmann equation to account for the effect of the bulk fluid flow on the EEDF. The two term expansion of the Boltzmann equation, as given, results in additional terms introduced to the equations due to the bulk fluid flow, with velocity u

Gas-controlled dynamic vacuum insulation with gas gate

Science.gov (United States)

Benson, D.K.; Potter, T.F.

1994-06-07

Disclosed is a dynamic vacuum insulation comprising sidewalls enclosing an evacuated chamber and gas control means for releasing hydrogen gas into a chamber to increase gas molecule conduction of heat across the chamber and retrieving hydrogen gas from the chamber. The gas control means includes a metal hydride that absorbs and retains hydrogen gas at cooler temperatures and releases hydrogen gas at hotter temperatures; a hydride heating means for selectively heating the metal hydride to temperatures high enough to release hydrogen gas from the metal hydride; and gate means positioned between the metal hydride and the chamber for selectively allowing hydrogen to flow or not to flow between said metal hydride and said chamber. 25 figs.

The electron edge of the low latitude boundary layer during accelerated flow events

International Nuclear Information System (INIS)

Gosling, J.T.; Thomsen, M.F.; Bame, S.J.; Onsager, T.G.; Russel, C.T.

1990-01-01

Magnetosheath plasma entering the Earth's magnetosphere to populate the low latitude boundary layer, LLBL, is often accelerated to speeds considerably greater than are observed in the adjacent magnetosheath. Measurements made during such accelerated flow events reveal separate electron and ion edges to the LLBL, with the electron edge being found earthward of the ion edge. Plasma electron velocity distributions observed at the earthward edge of the LLBL are often highly structured, exhibiting large asymmetries parallel and antiparallel, as well as perpendicular, to the local magnetic field. These features can consistently be interpreted as time-of-flight effects on recently reconnected field lines, and thus are strong evidence in support of the reconnection interpretation of accelerated plasma flow events

Multicharged ion-induced emission from metal- and insulator surfaces related to magnetic fusion research

Energy Technology Data Exchange (ETDEWEB)

Winter, H.P. [Technische Univ., Vienna (Austria). Inst. fuer Allgemeine Physik

1997-01-01

The edge region of magnetically confined plasmas in thermonuclear fusion experiments couples the hot plasma core with the cold first wall. We consider the dependence of plasma-wall interaction processes on edge plasma properties, with particular emphasis on the role of slow multicharged ions (MCI). After a short survey on the physics of slow MCI-surface interaction we discuss recent extensive studies on MCI-induced electron emission from clean metal surfaces conducted at impact velocities << 1 a.u., from which generally reliable total electron yields can be obtained. We then demonstrate the essentially different role of the MCI charge for electron emission from metallic and insulator surfaces, respectively. Furthermore, we present recent results on slow MCI-induced `potential sputtering` of insulators which, in contrast to the well established kinetic sputtering, already occurs at very low ion impact energy and strongly increases with the MCI charge state. (J.P.N.). 55 refs.

Transport of Dirac fermions on the surface of strong topological insulator and graphene

Energy Technology Data Exchange (ETDEWEB)

Kundu, Arijit

2012-06-14

In this dissertation I study electronic transport through Dirac Fermions on the surface of strong topological insulator and graphene. I start by reviewing the physics of topological insulator and graphene and the low energy effective theory for the electronic states of the surface of a 3D strong topological insulator and graphene. Using this theory the electronic structure of the surface states of strong topological insulators of geometries with large surface to bulk ratio like nanowire and thin film are obtained. Then the energy spectrum and the spin-parity structure of the eigenstates for a finite size topological insulator quantum dot of the shape of a nanotube are considered. Numerical calculations show that even at the lowest energy scales, the ''spin-surface locking'' is broken, that is, the spin direction in a topologically protected surface mode is not locked to the surface. The calculations also show the existence of ''zero-momentum'' modes, and sub-gap states localized near the ''caps'' of the dot. Both the energy spectrum and the spin texture of the eigenstates are basically reproduced from an analytical surface Dirac fermion description. The results are compared to microscopic calculations using a tight-binding model for a strong topological insulator in a finite-length nanowire geometry, which shows qualitative similarity. Then, a theoretical study of electron-phonon scattering effects in thin films made of a strong topological insulator is presented. Phonons are modeled by isotropic elastic continuum theory with stress-free boundary conditions, and the interaction with the helical surface Dirac fermions is mediated by the deformation potential. The temperature-dependent electrical resistivity ρ(T) and the quasi-particle decay rate Γ(T) observable in photo-emission are computed numerically. The low and high-temperature power laws for both quantities are obtained analytically. Detailed

The inaccuracy of heat transfer characteristics for non-insulated and insulated spherical containers neglecting the influence of heat radiation

International Nuclear Information System (INIS)

Wong, King-Leung; Salazar, Jose Luis Leon; Prasad, Leo; Chen, Wen-Lih

2011-01-01

In this investigation, the differences of heat transfer characteristics for insulated and non-insulated spherical containers between considering and neglecting the influence of heat radiation are studied by the simulations in some practical situations. It is found that the heat radiation effect cannot be ignored in conditions of low ambient convection heat coefficients (such ambient air) and high surface emissivities, especially for the non-insulated and thin insulated cases. In most practical situations when ambient temperature is different from surroundings temperature and the emissivity of insulation surface is different from that of metal wall surface, neglecting heat radiation will result in inaccurate insulation effect and heat transfer errors even with very thick insulation. However, the insulation effect considering heat radiation will only increase a very small amount after some dimensionless insulated thickness (such insulation thickness/radius ≥0.2 in this study), thus such dimensionless insulated thickness can be used as the optimum thickness in practical applications. Meanwhile, wrapping a material with low surface emissivity (such as aluminum foil) around the oxidized metal wall or insulation layer (always with high surface emissivity) can achieve very good insulated effect for the non-insulated or thin insulated containers.

Electrical insulating liquid: A review

Directory of Open Access Journals (Sweden)

Deba Kumar Mahanta

2017-08-01

Full Text Available Insulating liquid plays an important role for the life span of the transformer. Petroleum-based mineral oil has become dominant insulating liquid of transformer for more than a century for its excellent dielectric and cooling properties. However, the usage of petroleum-based mineral oil, derived from a nonrenewable energy source, has affected the environment for its nonbiodegradability property. Therefore, researchers direct their attention to renewable and biodegradable alternatives. Palm fatty acid ester, coconut oil, sunflower oil, etc. are considered as alternatives to replace mineral oil as transformer insulation liquid. This paper gives an extensive review of different liquid insulating materials used in a transformer. Characterization of different liquids as an insulating material has been discussed. An attempt has been made to classify different insulating liquids-based on different properties.

Application of Nanotechnology-Based Thermal Insulation Materials in Building Construction

Directory of Open Access Journals (Sweden)

Bozsaky David

2016-03-01

Full Text Available Nanotechnology-based materials have previously been used by space research, pharmaceuticals and electronics, but in the last decade several nanotechnology-based thermal insulation materials have appeared in building industry. Nowadays they only feature in a narrow range of practice, but they offer many potential applications. These options are unknown to most architects, who may simply be afraid of these materials owing to the incomplete and often contradictory special literature. Therefore, they are distrustful and prefer to apply the usual and conventional technologies. This article is intended to provide basic information about nanotechnology-based thermal insulation materials for designers. It describes their most important material properties, functional principles, applications, and potential usage options in building construction.

Biodegradation performance of environmentally-friendly insulating oil

Science.gov (United States)

Yang, Jun; He, Yan; Cai, Shengwei; Chen, Cheng; Wen, Gang; Wang, Feipeng; Fan, Fan; Wan, Chunxiang; Wu, Liya; Liu, Ruitong

2018-02-01

In this paper, biodegradation performance of rapeseed insulating oil (RDB) and FR3 insulating oil (FR3) was studied by means of ready biodegradation method which was performed with Organization for Economic Co-operation and Development (OECD) 301B. For comparison, the biodegradation behaviour of 25# mineral insulating oil was also characterized with the same method. The testing results shown that the biodegradation degree of rapeseed insulating oil, FR3 insulating oil and 25# mineral insulating oil was 95.8%, 98.9% and 38.4% respectively. Following the “new chemical risk assessment guidelines” (HJ/T 154 - 2004), which illustrates the methods used to identify and assess the process safety hazards inherent. The guidelines can draw that the two vegetable insulating oils, i.e. rapeseed insulating oil and FR3 insulating oil are easily biodegradable. Therefore, the both can be classified as environmentally-friendly insulating oil. As expected, 25# mineral insulating oil is hardly biodegradable. The main reason is that 25# mineral insulating oil consists of isoalkanes, cyclanes and a few arenes, which has few unsaturated bonds. Biodegradation of rapeseed insulating oil and FR3 insulating oil also remain some difference. Biodegradation mechanism of vegetable insulating oil was revealed from the perspective of hydrolysis kinetics.

Elastomeric Thermal Insulation Design Considerations in Long, Aluminized Solid Rocket Motors

Science.gov (United States)

Martin, Heath T.

2017-01-01

An all-new sounding rocket was designed at NASA's Marshall Space Flight Center that featured an aft finocyl, aluminized solid propellant grain and silica-filled ethylene-propylene-diene monomer (SFEPDM) internal insulation. Upon the initial static firing of the first of this new design, the solid rocket motor (SRM) case failed thermally just upstream of the aft closure early in the burn time. Subsequent fluid modeling indicated that the high-velocity combustion-product jets emanating from the fin-slots in the propellant grain were likely inducing a strongly swirling flow, thus substantially increasing the severity of the convective environment on the exposed portion of the SFEPDM insulation in this region. The aft portion of the fin-slots in another of the motors were filled with propellant to eliminate the possibility of both direct jet impingement on the exposed SFEPDM and the appearance of strongly swirling flow in the aft region of the motor. When static-fired, this motor's case still failed in the same axial location, and, though somewhat later than for the first static firing, still in less than 1/3rd of the desired burn duration. These results indicate that the extreme material decomposition rates of the SFEPDM in this application are not due to gas-phase convection or shear but rather to interactions with burning aluminum or alumina slag. Further comparisons with between SFEPDM performance in this design and that in other hot-fire tests provide insight into the mechanisms of SFEPDM decomposition in SRM aft domes that can guide the upcoming redesign effort, as well as other future SRM designs. These data also highlight the current limitations of modeling elastomeric insulators solely with diffusion-controlled, gas-phase thermochemistry in SRM regions with significant viscous shear and/or condense-phase impingement or flow.

Experimental performance evaluation of solid concrete and dry insulation materials for passive buildings in hot and humid climatic conditions

International Nuclear Information System (INIS)

Rehman, Hassam Ur

2017-01-01

Highlights: • Experimental investigation of building insulation materials in UAE from 2012–2014. • Four same calorimeters with different south walls were built in open air laboratory. • Heat flux was reduced by 22–75% in steady state analysis during summer by insulation. • Hence, energy consumption for cooling was reduced by an average 7.6–25.3%. • Heat flow was steady in free floating analysis in winter through insulated walls. - Abstract: It is known that enhancement of building energy efficiency can help in reducing energy consumption. The use of the solar insulating materials are the most efficient and cost effective passive methods for reducing the cooling requirements of the buildings. Apart from theoretical studies, no detailed experimental studies were performed in the UAE on energy savings by using solar insulation materials on buildings. Four (3 m × 3 m × 3 m) solar calorimeters were built in RAK, UAE in order to perform an open air outdoor test for energy savings obtained with solar insulating materials. The design is aimed to determine the heat flux reduction and the energy savings achieved with and without different solar insulating materials, mounted at the south wall of solar calorimeters with similar indoor and ambient conditions. Experimental results are discussed to evaluate the thermal performance during high temperature conditions in summer’s period when cooling demand of the building is at its peak and also in winters when there is no cooling demand. The test is from 2012 to 2014. The controlled-temperature experimental study at a set point of 24 °C showed that if the standard building material, i.e. solid concrete, is retrofitted with polyisocyanurate (PIR) and reflective coatings or completely replaced with energy-efficient dry insulation material walls such as exterior insulation finishing system (EIFS), energy savings up to an average of 7.6–25.3% can be achieved. This is due to the reduction of heat flux by an

Gas insulated substations

CERN Document Server

2014-01-01

This book provides an overview on the particular development steps of gas insulated high-voltage switchgear, and is based on the information given with the editor's tutorial. The theory is kept low only as much as it is needed to understand gas insulated technology, with the main focus of the book being on delivering practical application knowledge. It discusses some introductory and advanced aspects in the meaning of applications. The start of the book presents the theory of Gas Insulated Technology, and outlines reliability, design, safety, grounding and bonding, and factors for choosing GIS. The third chapter presents the technology, covering the following in detail: manufacturing, specification, instrument transformers, Gas Insulated Bus, and the assembly process. Next, the book goes into control and monitoring, which covers local control cabinet, bay controller, control schemes, and digital communication. Testing is explained in the middle of the book before installation and energization. Importantly, ...

Effects of pressure on doped Kondo insulators

International Nuclear Information System (INIS)

Lee, Chengchung; Xu, Wang

1999-08-01

The effects of pressure on the doped Kondo insulators (KI) are studied in the framework of the slave-boson mean-field theory under the coherent potential approximation (CPA). A unified picture for both electron-type KI and hole-type KI is presented. The density of states of the f-electrons under the applied pressures and its variation with the concentration of the Kondo holes are calculated self-consistently. The specific heat coefficient, the zero-temperature magnetic susceptibility as well as the low temperature electric resistivity of the doped KI under various pressures are obtained. The two contrasting pressure-dependent effects observed in the doped KI systems can be naturally explained within a microscopic model. (author)

Avalanches near a solid insulator in nitrogen gas at atmospheric pressure

International Nuclear Information System (INIS)

Mahajan, S.M.; Sudarshan, T.S.; Department of Electrical and Computer Engineering, University of South Carolina, Columbia, South Carolina 29208)

1989-01-01

The pulsed Townsend (PT) technique was used to record the growth of avalanches near a solid insulator in nitrogen gas at 0.1 MPa. Several other nonconventional techniques for releasing initiatory electrons at the cathode are discussed. In this paper, experimental results of avalanches initiated by illuminating a fast (0.6-ns) nitrogen laser onto the cathode triple junction are presented. Data were recorded with plexiglas, Teflon, high-density polyethylene, low-density polyethylene, Delrin, etc. Effect of surface condition, variation of the distance between insulator surface and the avalanche initiation region, and the effect of a large number of previous avalanches on the avalanche characteristics at a particular voltage were studied. The Townsend primary ionization coefficient, hereafter referred to as growth coefficient (α), and drift velocity (V/sub e/) were evaluated through the PT technique. Results indicate that the avalanche growth in the vicinity of a solid insulator is less than that in an identical plain gas gap. Existence of a nonuniform field as a result of surface charges on the insulator and/or field modifications due to the avalanche space charge are believed to be responsible for this behavior

Peierls instability as the insulating origin of the Na/Si(111)-(3 × 1) surface with a Na coverage of 2/3 monolayers

Science.gov (United States)

Kang, Myung Ho; Kwon, Se Gab; Jung, Sung Chul

2018-03-01

Density functional theory (DFT) calculations are used to investigate the insulating origin of the Na/Si(111)-(3 × 1) surface with a Na coverage of 2/3 monolayers. In the coverage definition, one monolayer refers to one Na atom per surface Si atom, so this surface contains an odd number of electrons (i.e., three Si dangling-bond electrons plus two Na electrons) per 3 × 1 unit cell. Interestingly, this odd-electron surface has been ascribed to a Mott-Hubbard insulator to account for the measured insulating band structure with a gap of about 0.8 eV. Here, we instead propose a Peierls instability as the origin of the experimental band gap. The concept of Peierls instability is fundamental in one-dimensional metal systems but has not been taken into account in previous studies of this surface. Our DFT calculations demonstrate that the linear chain structure of Si dangling bonds in this surface is energetically unstable with respect to a × 2 buckling modulation, and the buckling-induced band gap of 0.79 eV explains well the measured insulating nature.

Economic and Environmental Optimization of an Airport Terminal Building’s Wall and Roof Insulation

Directory of Open Access Journals (Sweden)

Mehmet Kadri Akyüz

2017-10-01

Full Text Available HVAC systems use the largest share of energy consumption in airport terminal buildings. Thus, the efficiency of the HVAC system and the performance of the building envelope have great importance in reducing the energy used for heating and cooling purposes. In this study, the application of thermal insulation on the walls and roof of the Hasan Polatkan Airport terminal building was investigated from energy, environment and cost aspects. This study determined the optimum insulation thickness and assessed its effects on environmental performance based on energy flows. Environmental payback periods were calculated depending on the optimum insulation thickness. The life cycle assessment (LCA method was used to assess whether the decrease in energy consumption after applying the insulation balanced the environmental effects during the period between the production and application of the thermal insulation material. The global warming potential (GWP based on IPCC100, and the effects on human health (HH, the ecosystem and natural resources were evaluated according to the ReCiPe method. LCA results were obtained by processing data taken from ecoinvent 3 database present in the Sima Pro 8.3.0.0 software. Applying thermal insulation on the walls and roof of the terminal building was found to decrease heat loss by 48% and 56%, respectively. In addition, the analyses showed that the environmental payback periods for the thermal insulation were shorter than the economic payback periods.

Study of thin insulating films using secondary ion emission

International Nuclear Information System (INIS)

Hilleret, Noel

1973-01-01

Secondary ion emission from insulating films was investigated using a CASTAING-SLODZIAN ion analyzer. Various different aspects of the problem were studied: charge flow across a silica film; the mobilization of sodium during ion bombardment; consequences of the introduction of oxygen on the emission of secondary ions from some solids; determination of the various characteristics of secondary ion emission from silica, silicon nitride and silicon. An example of measurements made using this type of operation is presented: profiles (concentration as a function of depth) of boron introduced by diffusion or implantation in thin films of silica on silicon or silicon nitride. Such measurements have applications in microelectronics. The same method of operation was extended to other types of insulating film, and in particular, to the metallurgical study of passivation films formed on the surface of stainless steels. (author) [fr

Topological Oxide Insulator in Cubic Perovskite Structure

Science.gov (United States)

Jin, Hosub; Rhim, Sonny H.; Im, Jino; Freeman, Arthur J.

2013-01-01

The emergence of topologically protected conducting states with the chiral spin texture is the most prominent feature at the surface of topological insulators. On the application side, large band gap and high resistivity to distinguish surface from bulk degrees of freedom should be guaranteed for the full usage of the surface states. Here, we suggest that the oxide cubic perovskite YBiO3, more than just an oxide, defines itself as a new three-dimensional topological insulator exhibiting both a large bulk band gap and a high resistivity. Based on first-principles calculations varying the spin-orbit coupling strength, the non-trivial band topology of YBiO3 is investigated, where the spin-orbit coupling of the Bi 6p orbital plays a crucial role. Taking the exquisite synthesis techniques in oxide electronics into account, YBiO3 can also be used to provide various interface configurations hosting exotic topological phenomena combined with other quantum phases. PMID:23575973

On metal-insulator transition in cubic fullerides

Science.gov (United States)

Iwahara, Naoya; Chibotaru, Liviu

The interplay between degenerate orbital and electron correlation is a key to characterize the electronic phases in, for example, transition metal compounds and alkali-doped fullerides. Besides, the degenerate orbital couples to spin and lattice degrees of freedom ,giving rise to exotic phenomena. Here, we develop the self-consistent Gutzwiller approach for the simultaneous treatment of the Jahn-Teller effect and electron correlation, and apply the methodology to reveal the nature of the ground electronic state of fullerides. For small Coulomb repulsion on site U, the fulleride is quasi degenerate correlated metal. With increase of U, we found the quantum phase transition from the metallic phase to JT split phase. In the latter, the Mott transition (MT) mainly develops in the half-filled subband, whereas the empty and the completely filled subbands are almost uninvolved. Therefore, we can qualify the metal-insulator transition in fullerides as an orbital selective MT induced by JT effect.

Insulation structure of thermonuclear device

International Nuclear Information System (INIS)

Suzuki, Takayuki; Usami, Saburo; Tsukamoto, Hideo; Kikuchi, Mitsuru

1998-01-01

The present invention provides an insulating structure of a thermonuclear device, in which insulation materials between toroidal coils are not broken even if superconductive toroidal coils are used. Namely, a tokamak type thermonuclear device of an insulating structure type comprises superconductive toroidal coils for confining plasmas arranged in a circular shape directing the center each at a predetermined angle, and the toroidal coils are insulated from each other. The insulation materials are formed by using a biaxially oriented fiber reinforced plastics. The contact surface of the toroidal coils and the insulating materials are arranged so that they are contact at a woven surface of the fiber reinforced plastics. Either or both of the contact surfaces of the fiber reinforced plastics and the toroidal coils are coated with a high molecular compound having a low friction coefficient. With such a constitution, since the interlayer shearing strength of the biaxially oriented fiber reinforced plastics is about 1/10 of the compression strength, the shearing stress exerted on the insulation material is reduced. Since a static friction coefficient on the contact surface is reduced to provide a structure causing slipping, shearing stress does not exceeds a predetermined limit. As a result, breakage of the insulation materials between the toroidal coils can be prevented. (I.S.)

Semiconducting:insulating polymer blends for optoelectronic applications—a review of recent advances

KAUST Repository

Scaccabarozzi, A. D.; Stingelin, N.

2014-01-01

In recent years, immense efforts in the organic electronics field have led to unprecedented progress and to devices of ever increasing performance. Despite these advances, new opportunities are sought in order to widen the applications of organic-based technologies and expand their functionalities and features. For this purpose, use of multicomponent systems seems an interesting approach in view of, e.g., increasing the mechanical flexibility and stability of organic electronic products as well as introducing other features such as self-encapsulation. One specific strategy is based on blending polymeric insulators with organic semiconductors; which has led to a desired improvement of the mechanical properties of organic devices, producing in certain scenarios robust and stable architectures. Here we discuss the working principle of semiconductor:insulator blends, examining the different approaches that have recently been reported in literature. We illustrate how organic field-effect transistors (OFET)s and organic solar cells (OPV)s can be fabricated with such systems without detrimental effects on the resulting device characteristics even at high contents of the insulator. Furthermore, we review the various properties that can be enhanced and/or manipulated by blending including air stability, mechanical toughness, H- vs. J-aggregation, etc. This journal is © the Partner Organisations 2014.

Low-energy electron transmission through high aspect ratio Al O nanocapillaries

DEFF Research Database (Denmark)

Milosavljević, A.R.; Jureta, J.; Víkor, G.

2009-01-01

Electron transmission through insulating AlO nanocapillaries of different diameters (40 and 270 nm) and 15 μm length has been investigated for low-energy electrons (2-120 V). The total intensity of transmitted current weakly depends on the incident electron energy and tilt angle defined with resp......Electron transmission through insulating AlO nanocapillaries of different diameters (40 and 270 nm) and 15 μm length has been investigated for low-energy electrons (2-120 V). The total intensity of transmitted current weakly depends on the incident electron energy and tilt angle defined...

The Obstacles Facing the Flow of the Electronic Information in the Arab World

Directory of Open Access Journals (Sweden)

Samir Yahya Umri

2006-12-01

Full Text Available This research views the most important obstacles facing the flow of electronic information in Arab world; with an illustration about the effect of each obstacle on the flowing of the information, and the special recommendation to overcome it. the research states 4 main obstacles; they are: number of internet users and the weakness of the infrastructure in our Arab world, the spam e-mails, the Bugs and vulnerabilities in the operating systems that allow hackers to attack the information systems, and the spread of the electronic pornography on the internet

Fast electron flow formation in the AMBAL-M open trap device

International Nuclear Information System (INIS)

Taskaev, S.Yu.

2000-01-01

Hot target plasma is obtained and essential longitudinal electron current passing in plasma from the source to a plasma tube is detected experimentally in the limit magnetic mirror of AMBAL-M facility using the end gas-discharge source of plasma. The flow of the electron current in front of the inlet plug where the longitudinal electrical field is directed away from the plug is studied various models of plasma description and possibilities of instability progress are studied. The essential longitudinal electron current in electron accelerating electrical field is shown the lead to the formation of fast neutron flux conveying current in a magnetic mirror [ru

Industrial applications or electron beams

International Nuclear Information System (INIS)

Martin, J. I.

2001-01-01

Industrial use of electron beams began in the 1950's with the crosslinking of polyethylene film and wire insulation. Today the number of electron beam Processing Systems installed for industrial applications throughout the world has grown to more than six hundred stations in over 35 countries. Total installed power is now approaching 40 megawatts (over 8 million tons of products per year). Electron beam is now utilized by many major industries including plastics, automotive, rubber goods, wire and cable, electrical insulation, semiconductor, medical, packaging, or pollution control. The principal effect of high-energy electrons is to produce ions in the materials treated, resulting in the liberation of orbital electrons. As a result, the original molecule is modified and the ree radicals combine to form new molecules with new chemical reactions or dis organisation od the DNA chains of living organisms (insects, fungus, microorganisms, etc.). (Author) 8 refs

RESEARCHES REGARDING USE OF TEXTILE MATERIALS FOR THERMAL INSULATION AT NEGATIVE TEMPERATURES

Directory of Open Access Journals (Sweden)

IOSUB Andrei

2014-05-01

Full Text Available Using thermal insulation in negative temperature acts to reduce heat flow to the cooled space or to objects that have a temperature below ambient temperature. To achieve economic operation of the space to be cooled insulation thickness and quality is an important factor. In this article we want to compare three products used in thermal insulation at negative temperatures: expanded polystyrene, non-woven and wool coats. The materials will be tested with a mechanical vapor compression refrigerator capable of producing temperatures in the range +4 .. -35 ° C, managed by a programmer Dixel capable of recording values between +40. .. -60 °C. Refrigeration insulation enclosure was made with 100 mm expanded polystyrene. On one side of the enclosure will be a cut of 250 * 250 mm, chosen in a central position where the material will be introduced to be tested. The dimensions of the samples are 250 * 250 * 60 mm. To check the insulation properties of materials it will be used a temperature logger capable of recording with two probes temperatures between +125...-40° C. One of the probes will be inserted inside the refrigerator and the second probe will be positioned to the outside of the test material adhered to an aluminum plate, in order to read a average temperature. The difference in thickness of the insulation shall be filled with non-woven material. Hardening the assembly will be made using a 6 mm thick OSB board. The materials will be tested in an identical ambient temperature and humidity.

Insulation Reformulation Development

Science.gov (United States)

Chapman, Cynthia; Bray, Mark

2015-01-01

The current Space Launch System (SLS) internal solid rocket motor insulation, polybenzimidazole acrylonitrile butadiene rubber (PBI-NBR), is a new insulation that replaced asbestos-based insulations found in Space Shuttle heritage solid rocket boosters. PBI-NBR has some outstanding characteristics such as an excellent thermal erosion resistance, low thermal conductivity, and low density. PBI-NBR also has some significant challenges associated with its use: Air entrainment/entrapment during manufacture and lay-up/cure and low mechanical properties such as tensile strength, modulus, and fracture toughness. This technology development attempted to overcome these challenges by testing various reformulated versions of booster insulation. The results suggest the SLS program should continue to investigate material alternatives for potential block upgrades or use an entirely new, more advanced booster. The experimental design was composed of a logic path that performs iterative formulation and testing in order to maximize the effort. A lab mixing baseline was developed and documented for the Rubber Laboratory in Bldg. 4602/Room 1178.

Depressurization experiments on a plugged fibrous insulation in a horizontal pressure tube

International Nuclear Information System (INIS)

Lang, H.; Weise, H.J.; Ennen, P.

1977-08-01

Hot gas ducts for high-temperature reactors with a helium turbine are subject to additional operational loads not caused by the gas temperature. They include vibrations, caused by high gas velocities or by the sound fields emitted from the turbine, and stresses, originating from fast, short-time pressure changes. Such pressure changes occur as a rule if the generator coupled with the turbine has to be disconnected from the grid. In order to avoid no-load operation of the turbine a bypass between HP and LP side of the turbine is opened. As a consequence of this measure a sudden pressure drop occurs in the free flow cross-section causing differential pressures within the insulation. As the size of these differential pressures depends on the insulating material, the density of plugging, the kind of internals, and on the position and size of the depressurization borings, the pressure distributions in the insulation were measured on a test tube for the HP channel. (orig./RW) [de

Unravelling the local structure of topological crystalline insulators using hyperfine interactions

CERN Multimedia

Phenomena emerging from relativistic electrons in solids have become one the main topical subjects in condensed matter physics. Among a wealth of intriguing new phenomena, several classes of materials have emerged including graphene, topological insulators and Dirac semi-metals. This project is devoted to one such class of materials, in which a subtle distortion of the crystalline lattice drives a material through different topological phases: Z$_{2}$ topological insulator (Z$_{2}$-TI), topological crystalline insulator (TCI), or ferroelectric Rashba semiconductor (FERS). We propose to investigate the local structure of Pb$_{1-x}$Sn$_{x}$Te and Ge$_{1-x}$Sn$_{x}$Te (with $\\textit{x}$ from 0 to 1) using a combination of experimental techniques based on hyperfine interactions: emission Mössbauer spectroscopy (eMS) and perturbed angular correlation spectroscopy (PAC). In particular, we propose to study the effect of composition ($\\textit{x}$ in Pb$_{1-x}$Sn$_{x}$Te and Ge$_{1-x}$Sn$_{x}$Te) on: \\\\ \\\\(1) the mag...

Numerical simulation of the insulation material transport to a PWR core under loss of coolant accident conditions

International Nuclear Information System (INIS)

Höhne, Thomas; Grahn, Alexander; Kliem, Sören; Rohde, Ulrich; Weiss, Frank-Peter

2013-01-01

Highlights: ► Detailed results of a numerical simulation of the insulation material transport to a PWR core are shown. ► The spacer grid is modeled as a strainer which completely retains the insulation material carried by coolant. ► The CFD calculations showed that the fibers at the upper spacer grid plane are not uniformly distributed. ► Furthermore the pressure loss does not exceed a critical limit. ► The PWR core coolablity can be guaranteed all the time during the transient. -- Abstract: In 1992, strainers on the suction side of the ECCS pumps in Barsebäck NPP Unit 2 became partially clogged with mineral wool because after a safety valve opened the steam impinged on thermally insulated equipment and released mineral wool. This event pointed out that strainer clogging is an issue in the course of a loss-of-coolant accident. Modifications of the insulation material, the strainer area and mesh size were carried out in most of the German NPPs. Moreover, back flushing procedures to remove the mineral wool from the strainers and differential pressure measurements were implemented to assure the performance of emergency core cooling during the containment sump recirculation mode. Nevertheless, it cannot be completely ruled out, that a limited amount of small fractions of the insulation material is transported into the RPV. During a postulated cold leg LOCA with hot leg ECC injection, the fibers enter the upper plenum and can accumulate at the fuel element spacer grids, preferably at the uppermost grid level. This effect might affect the ECC flow into the core and could result in degradation of core cooling. It was the aim of the numerical simulations presented to study where and how many mineral wool fibers are deposited at the upper spacer grid. The 3D, time dependent, multi-phase flow problem was modeled applying the CFD code ANSYS CFX. The CFD calculation does not yet include steam production in the core and also does not include re-suspension of the

Scanning tunneling microscopy study of a newly proposed topological insulator ZrTe{sub 5}

Energy Technology Data Exchange (ETDEWEB)

Kuhn, Timo; Gragnaniello, Luca; Fonin, Mikhail [Universitaet Konstanz (Germany); Autes, Gabriel; Berger, Helmuth; Yazyev, Oleg [Institute of Condensed Matter Physics, Ecole Polytechnique Federale de Lausanne (EPFL), Lausanne (Switzerland); Manzoni, Giulia [Universita degli Studi di Trieste (Italy); Crepaldi, Alberto; Parmigiani, Fulvio [Elettra-Sincrotrone Trieste, Trieste (Italy)

2016-07-01

Topological insulators belong to a new kind of material class that posses robust gapless states inside the insulating bulk gap, which makes them promising candidates for achieving dissipationless transport devices. We present a Scanning tunneling microscopy (STM) and spectroscopy (STS) study on a layered material ZrTe{sub 5}, a promising candidate for a new topological insulator. The crystal structure could clearly be identified in topography images. STM measurements enabled direct imaging of standing waves at steps and defects. The standing waves show a clearly dispersive character. Furthermore STS measurements are in good agreement with density functional theory calculations and reveal Landau quantization with applied magnetic field. Comparison with data obtained by angle resolved photoemission spectroscopy allows for detailed insights into the electronic properties of this material.

Thermal Simulation of Switching Pulses in an Insulated Gate Bipolar Transistor (IGBT) Power Module

Science.gov (United States)

2015-02-01

executed with SolidWorks Flow Simulation , a computational fluid-dynamics code. The graph in Fig. 2 shows the timing and amplitudes of power pulses...defined a convective flow of air perpendicular to the bottom surface of the mounting plate, with a velocity of 10 ft/s. The thermal simulations were...Thermal Simulation of Switching Pulses in an Insulated Gate Bipolar Transistor (IGBT) Power Module by Gregory K Ovrebo ARL-TR-7210

Self-energy behavior away from the Fermi surface in doped Mott insulators.

Science.gov (United States)

Merino, J; Gunnarsson, O; Kotliar, G

2016-02-03

We analyze self-energies of electrons away from the Fermi surface in doped Mott insulators using the dynamical cluster approximation to the Hubbard model. For large onsite repulsion, U, and hole doping, the magnitude of the self-energy for imaginary frequencies at the top of the band ([Formula: see text]) is enhanced with respect to the self-energy magnitude at the bottom of the band ([Formula: see text]). The self-energy behavior at these two [Formula: see text]-points is switched for electron doping. Although the hybridization is much larger for (0, 0) than for [Formula: see text], we demonstrate that this is not the origin of this difference. Isolated clusters under a downward shift of the chemical potential, [Formula: see text], at half-filling reproduce the overall self-energy behavior at (0, 0) and [Formula: see text] found in low hole doped embedded clusters. This happens although there is no change in the electronic structure of the isolated clusters. Our analysis shows that a downward shift of the chemical potential which weakly hole dopes the Mott insulator can lead to a large enhancement of the [Formula: see text] self-energy for imaginary frequencies which is not associated with electronic correlation effects, even in embedded clusters. Interpretations of the strength of electronic correlations based on self-energies for imaginary frequencies are, in general, misleading for states away from the Fermi surface.

Current-Voltage Characteristic of Nanosecond - Duration Relativistic Electron Beam

Science.gov (United States)

Andreev, Andrey

2005-10-01

The pulsed electron-beam accelerator SINUS-6 was used to measure current-voltage characteristic of nanosecond-duration thin annular relativistic electron beam accelerated in vacuum along axis of a smooth uniform metal tube immersed into strong axial magnetic field. Results of these measurements as well as results of computer simulations performed using 3D MAGIC code show that the electron-beam current dependence on the accelerating voltage at the front of the nanosecond-duration pulse is different from the analogical dependence at the flat part of the pulse. In the steady-state (flat) part of the pulse), the measured electron-beam current is close to Fedosov current [1], which is governed by the conservation law of an electron moment flow for any constant voltage. In the non steady-state part (front) of the pulse, the electron-beam current is higher that the appropriate, for a giving voltage, steady-state (Fedosov) current. [1] A. I. Fedosov, E. A. Litvinov, S. Ya. Belomytsev, and S. P. Bugaev, ``Characteristics of electron beam formed in diodes with magnetic insulation,'' Soviet Physics Journal (A translation of Izvestiya VUZ. Fizika), vol. 20, no. 10, October 1977 (April 20, 1978), pp.1367-1368.

A system extinguishing a fire by insulating a liquid fuel

International Nuclear Information System (INIS)

Colome, Jacques; Duchene, Alain; Regnier, Jean.

1975-01-01

The invention refers to a system for quickly extinguishing a liquid fuel body on fire by insulating it completely from the ambient air. It applies particularly to the case of a high temperature liquid sodium sheet flowing accidentally from a circuit belonging to a fast neutron reactor. The system in question includes a lower receptacle for collecting the liquid fuel and a top cover shutting off the receptacle. This cover has inclined channels to take the liquid fuel flow and openings to allow this liquid through at the bottom end of the channels. These openings are closed by retractable shutters moving away under the pressure of the liquid in the channels and closing automatically after the liquid has flowed into the receptacle [fr

Electronic heat, charge and spin transport in superconductor-ferromagnetic insulator structures

Energy Technology Data Exchange (ETDEWEB)

Bergeret, Sebastian [Materials Physics Center (CFM-CSIC), San Sebastian (Spain); Donostia International Physics Center (DIPC), San Sebastian (Spain)

2015-07-01

It is known for some time that a superconducting (S) film in contact with a ferromagnetic insulator (FI) exhibits a spin-splitting in the density of states (DoS). Recently we have explored different S-FI hybrid structures and predicted novel effects exploiting such spin-splitting of the DoS. In this talk I will briefly discuss (i) a heat valve based on a FI-S-I-S-FI Josephson junction; (ii) a thermoelectric transistor and (iii) the occurrence of a giant thermophase in a thermally-biased Josephson junction.

Simulation of power flow in magnetically insulated convolutes for pulsed modular accelerators

International Nuclear Information System (INIS)

Seidel, D.B.; Goplen, B.C.; VanDevender, J.P.

1980-01-01

Two distinct simulation approaches for magnetic insulation are developed which can be used to address the question of nonsimultaneity. First, a two-dimensional model for a two-module system is simulated using a fully electromagnetic, two-dimensional, time-dependent particle code. Next, a nonlinear equivalent circuit approach is used to compare with the direct simulation for the two module case. The latter approach is then extended to a more interesting three-dimensional geometry with several MITL modules

Inelastic interactions of swift electrons in solids

International Nuclear Information System (INIS)

Tung, C.J.; Ritchie, R.H.; Ashley, J.C.; Anderson, V.E.

1976-01-01

Theoretical calculations of electron mean free paths and electron slowing-down spectra in solids are described. These calculations involve (a) the use of an electron gas model to approximate the response of conduction band electrons in metals, (b) the application of a statistical model for the calculation of electron mean free paths in metals, (c) the development of an insulator model to describe valence band electrons in insulators and semiconductors, and (d) the use of data on atomic generalized oscillator strengths to describe the excitation of the ion cores. Exchange effects are included in the calculations through a semi-empirical procedure. Detailed results are presented for electron mean free paths in Ag, Au, Al, and Al 2 O 3 , and on the stopping power of Al and Al 2 O 3 , for electrons with energies at a few eV to 10 keV. The agreement of these calculations with experimental measurements is quite reasonable over a wide range of electron energies. A detailed description of the calculation of electron slowing-down spectra in solids is presented. Low energy electron slowing-down spectra of monoenergetic electron sources in Al and Al 2 O 3 are calculated. Calculations of electron slowing-down spectra in Al 2 O 3 are made using differential cross sections obtained employing an insulator model and from GOS functions for ion core electrons. Auger electron contributions to the slowing-down spectrum are discussed. Results for the slowing-down spectrum are compared with the experimental data measured by Birkhoff and coworkers. Generally good agreement is found over a wide range of electron energies

Note: long-range scanning tunneling microscope for the study of nanostructures on insulating substrates.

Science.gov (United States)

Molina-Mendoza, Aday J; Rodrigo, José G; Island, Joshua; Burzuri, Enrique; Rubio-Bollinger, Gabino; van der Zant, Herre S J; Agraït, Nicolás

2014-02-01

The scanning tunneling microscope (STM) is a powerful tool for studying the electronic properties at the atomic level, however, it is of relatively small scanning range and the fact that it can only operate on conducting samples prevents its application to study heterogeneous samples consisting of conducting and insulating regions. Here we present a long-range scanning tunneling microscope capable of detecting conducting micro and nanostructures on insulating substrates using a technique based on the capacitance between the tip and the sample and performing STM studies.

Note: Long-range scanning tunneling microscope for the study of nanostructures on insulating substrates

Energy Technology Data Exchange (ETDEWEB)

Molina-Mendoza, Aday J., E-mail: aday.molina@uam.es [Departamento de Física de la Materia Condensada, Universidad Autónoma de Madrid, Campus de Cantoblanco, E-28049 Madrid (Spain); Rodrigo, José G.; Rubio-Bollinger, Gabino [Departamento de Física de la Materia Condensada, Universidad Autónoma de Madrid, Campus de Cantoblanco, E-28049 Madrid (Spain); Condensed Matter Physics Center (IFIMAC) and Instituto Universitario de Ciencia de Materiales “Nicolás Cabrera,” Universidad Autónoma de Madrid, Campus de Cantoblanco, E-28049 Madrid (Spain); Island, Joshua; Burzuri, Enrique; Zant, Herre S. J. van der [Kavli Institute of Nanoscience, Delft University of Technology, P.O. Box 5046, 2600 GA Delft (Netherlands); Agraït, Nicolás [Departamento de Física de la Materia Condensada, Universidad Autónoma de Madrid, Campus de Cantoblanco, E-28049 Madrid (Spain); Condensed Matter Physics Center (IFIMAC) and Instituto Universitario de Ciencia de Materiales “Nicolás Cabrera,” Universidad Autónoma de Madrid, Campus de Cantoblanco, E-28049 Madrid (Spain); Instituto Madrileño de Estudios Avanzados en Nanociencia IMDEA-Nanociencia, E-28049 Madrid (Spain)

2014-02-15

The scanning tunneling microscope (STM) is a powerful tool for studying the electronic properties at the atomic level, however, it is of relatively small scanning range and the fact that it can only operate on conducting samples prevents its application to study heterogeneous samples consisting of conducting and insulating regions. Here we present a long-range scanning tunneling microscope capable of detecting conducting micro and nanostructures on insulating substrates using a technique based on the capacitance between the tip and the sample and performing STM studies.

Edge states and integer quantum Hall effect in topological insulator thin films.

Science.gov (United States)

Zhang, Song-Bo; Lu, Hai-Zhou; Shen, Shun-Qing

2015-08-25

The integer quantum Hall effect is a topological state of quantum matter in two dimensions, and has recently been observed in three-dimensional topological insulator thin films. Here we study the Landau levels and edge states of surface Dirac fermions in topological insulators under strong magnetic field. We examine the formation of the quantum plateaux of the Hall conductance and find two different patterns, in one pattern the filling number covers all integers while only odd integers in the other. We focus on the quantum plateau closest to zero energy and demonstrate the breakdown of the quantum spin Hall effect resulting from structure inversion asymmetry. The phase diagrams of the quantum Hall states are presented as functions of magnetic field, gate voltage and chemical potential. This work establishes an intuitive picture of the edge states to understand the integer quantum Hall effect for Dirac electrons in topological insulator thin films.

Improving thermal insulation of TC4 using YSZ-based coating and SiO2 aerogel

OpenAIRE

Jin, Lei; Li, Peizhong; Zhou, Haibin; Zhang, Wei; Zhou, Guodong; Wang, Chun

2015-01-01

In this paper, air plasmas spray (APS) was used to prepare YSZ and Sc2O3–YSZ (ScYSZ) coating in order to improve the thermal insulation ability of TC4 alloy. SiO2 aerogel was also synthesized and affixed on TC4 titanium alloy to inhabit thermal flow. The microstructures, phase compositions and thermal insulation performance of three coatings were analyzed in detail. The results of thermal diffusivity test by a laser flash method showed that the thermal diffusivities of YSZ, Sc2O3–YSZ and SiO2...

The fabrication of a vanadium-stainless steel test section for MHD testing of insulator coatings in flowing lithium

International Nuclear Information System (INIS)

Reed, C.B.; Mattas, R.F.; Smith, D.L.; Chung, H.; Tsai, H.-C.; Morgan, G.D.; Wille, G.W.; Young, C.

1996-01-01

To test the magnetohydrodynamic (MHD) pressure drop reduction performance of candidate insulator coatings for the ITER Vanadium/Lithium Breeding Blanket, a test section comprised of a V- 4Cr-4Ti liner inside a stainless steel pipe was designed and fabricated. Theoretically, the MHD pressure drop reduction benefit resulting, from an electrically insulating coating on a vanadium- lined pipe is identical to the benefit derived from an insulated pipe fabricated of vanadium alone. A duplex test section design consisting of a V alloy liner encased in a SS pressure boundary provided protection for vanadium from atmospheric contamination during operation at high temperature and obviated any potential problems with vanadium welding while also minimizing the amount of V alloy material required. From the MHD and insulator coating- point of view, the test section outer SS wall and inner V alloy liner can be modeled simply as a wall having a sandwich construction. Two 52.3 mm OD x 2.9 m long V-alloy tubes were fabricated by Century Tubes from 64 mm x 200 mm x 1245 mm extrusions produced by Teledyne Wah Chang. The test section's duplex structure was subsequently fabricated at Century Tubes by drawing down a SS pipe (2 inch schedule 10) over one of the 53.2 mm diameter V tubes

Environmental safety providing during heat insulation works and using thermal insulation materials

Directory of Open Access Journals (Sweden)

Velichko Evgeny

2017-01-01

Full Text Available This article considers the negative effect of thermal insulating materials and products on human health and environment pollution, particularly in terms of the composition of environmentally hazardous construction products. The authors have analyzed the complex measures for providing ecological safety, sanitary and epidemiological requirements, rules and regulations both during thermal insulation works and throughout the following operation of buildings and premises. The article suggests the protective and preventive measures to reduce and eliminate the negative impact of the proceeding of thermal insulation works on the natural environment and on human health.

16 CFR 460.18 - Insulation ads.

Science.gov (United States)

2010-01-01

... Commercial Practices FEDERAL TRADE COMMISSION TRADE REGULATION RULES LABELING AND ADVERTISING OF HOME INSULATION § 460.18 Insulation ads. (a) If your ad gives an R-value, you must give the type of insulation and... your ad gives a price, you must give the type of insulation, the R-value at a specific thickness, the...

Microscopic Void Detection for Predicting Remaining Life in Electric Cable Insulation

International Nuclear Information System (INIS)

Horvath, David A.; Avila, Steven M.

2003-01-01

A reliable method of testing for remaining life in electric cable insulation has continued to elude the nuclear industry as it seeks to extend the life and license of its nuclear stations. Until recently, a trendable, measurable electrical property has not been found, and unexpected cable failures continue to be reported. Most reliable approaches to date rely on monitoring mechanical properties, which are assumed to degrade faster than the insulation's electrical properties. This paper introduces a promising technique based on void characterization, which is dependent on an electrical property related to dielectric strength. A relationship between insulation void characteristics (size and density) and the onset of partial discharge is known to exist. A similar relationship can be shown between void characteristics and unacceptable leakage currents (another typical cable failure criterion). For low-voltage cables, it is believed void content can be correlated to mechanical property degradation.This paper will report on an approach for using void information, research results showing the existence of trendable void characteristics in commonly used electric insulation materials, and techniques for detecting the voids (both laboratory- and field-based techniques). Acoustical microscopy was found to be potentially more suitable than conventional ultrasound for nondestructive in situ detection and monitoring of void characteristics in jacketed multiconductor insulation while ignoring the jacket. Also, optical and scanning electron microscope techniques will play an essential role in establishing the database necessary for continued development and implementation of this promising technique

Numerical noise analysis for insulator of overhead transmission line

Science.gov (United States)

Zhang, Yulin; Chen, Yuwen; Huang, Yu

2018-04-01

As an important and complex issue in aero acoustic field, a lot of explorations have been devoted to the wind-induced noise. However, there is still lack of intensive investigations for aerodynamic noise in high-voltage transmission. The overhead transmission line system leads to serious occupational noise exposure in high wind-speed environment, and the noise can even injure the electricians in charge of insulator. By using computational fluid dynamics (CFD) which combined with computational aero acoustics (CAA), this paper predicts the noise generated by insulator of high voltage electricity transmission line which explores in wind environment. The simulation results indicate that the wind velocity, the assembly angle of the insulator and its ribs' distribution are the main contributory factors for the aerodynamic noise. Specifically, when wind velocity is greater than 15m/s, the alteration of noise is not sensitive to the wind velocity; furthermore, when the assembly angle increases from 0°to 60°, the noise decreases gradually, however, if the angle is happening to be 75°or 90°, it would be even greater than that at 0°. In order to inhibit the aerodynamic noise, it is necessary to control the flow blowing across the boundary of the insulator. Consequently, the result indicates that if the outermost rib is shorter than the second one, the noise reduced evidently. This information expects to provide useful help for the extremely suppression of aerodynamic noise, and also supply practical reference material for the design and application of overhead transmission line system.

Ferromagnetic Peierls insulator state in A Mg4Mn6O15(A =K ,Rb ,Cs )

Science.gov (United States)

Yamaguchi, T.; Sugimoto, K.; Ohta, Y.; Tanaka, Y.; Sato, H.

2018-04-01

Using the density-functional-theory-based electronic structure calculations, we study the electronic state of recently discovered mixed-valent manganese oxides A Mg4Mn6O15(A =K ,Rb ,Cs ) , which are fully spin-polarized ferromagnetic insulators with a cubic crystal structure. We show that the system may be described as a three-dimensional arrangement of the one-dimensional chains of a 2 p orbital of O and a 3 d orbital of Mn running along the three axes of the cubic lattice. We thereby argue that in the ground state the chains are fully spin polarized due to the double-exchange mechanism and are distorted by the Peierls mechanism to make the system insulating.

Electrical insulators for the theta-pinch fusion reactor

International Nuclear Information System (INIS)

Clinard, F.W. Jr.

1976-01-01

The five major applications for electrical insulators in the Reference Theta Pinch Reactor are as follows: (1) first-wall insulator, (2) blanket intersegment insulator, (3) graphite encapsulating insulator, (4) implosion coil insulator, and (5) compression coil insulator. Insulator design proposals and some preliminary test results are given for each application

Hydrogen storage in insulated pressure vessels

Energy Technology Data Exchange (ETDEWEB)

Aceves, S.M.; Garcia-Villazana, O. [Lawrence Livermore National Lab., CA (United States)

1998-08-01

Insulated pressure vessels are cryogenic-capable pressure vessels that can be fueled with liquid hydrogen (LH{sub 2}) or ambient-temperature compressed hydrogen (CH{sub 2}). Insulated pressure vessels offer the advantages of liquid hydrogen tanks (low weight and volume), with reduced disadvantages (lower energy requirement for hydrogen liquefaction and reduced evaporative losses). This paper shows an evaluation of the applicability of the insulated pressure vessels for light-duty vehicles. The paper shows an evaluation of evaporative losses and insulation requirements and a description of the current analysis and experimental plans for testing insulated pressure vessels. The results show significant advantages to the use of insulated pressure vessels for light-duty vehicles.

Giant magneto-spin-Seebeck effect and magnon transfer torques in insulating spin valves

Science.gov (United States)

Cheng, Yihong; Chen, Kai; Zhang, Shufeng

2018-01-01

We theoretically study magnon transport in an insulating spin valve (ISV) made of an antiferromagnetic insulator sandwiched between two ferromagnetic insulator (FI) layers. In the conventional metal-based spin valve, the electron spins propagate between two metallic ferromagnetic layers, giving rise to giant magnetoresistance and spin transfer torque. Here, the incoherent magnons in the ISV serve as angular momentum carriers and are responsible for the angular momentum transport between two FI layers across the antiferromagnetic spacer. We predict two transport phenomena in the presence of the temperature gradient: a giant magneto-spin-Seebeck effect in which the output voltage signal is controlled by the relative orientation of the two FI layers and magnon transfer torque that can be used for switching the magnetization of the FI layers with a temperature gradient of the order of 0.1 Kelvin per nanometer.

Ambipolar field effect in the ternary topological insulator (BixSb1–x)2Te3 by composition tuning

KAUST Repository

Kong, Desheng

2011-10-02

Topological insulators exhibit a bulk energy gap and spin-polarized surface states that lead to unique electronic properties 1-9, with potential applications in spintronics and quantum information processing. However, transport measurements have typically been dominated by residual bulk charge carriers originating from crystal defects or environmental doping 10-12, and these mask the contribution of surface carriers to charge transport in these materials. Controlling bulk carriers in current topological insulator materials, such as the binary sesquichalcogenides Bi 2Te 3, Sb 2Te 3 and Bi 2Se 3, has been explored extensively by means of material doping 8,9,11 and electrical gating 13-16, but limited progress has been made to achieve nanostructures with low bulk conductivity for electronic device applications. Here we demonstrate that the ternary sesquichalcogenide (Bi xSb 1-x) 2Te 3 is a tunable topological insulator system. By tuning the ratio of bismuth to antimony, we are able to reduce the bulk carrier density by over two orders of magnitude, while maintaining the topological insulator properties. As a result, we observe a clear ambipolar gating effect in (Bi xSb 1-x) 2Te 3 nanoplate field-effect transistor devices, similar to that observed in graphene field-effect transistor devices 17. The manipulation of carrier type and density in topological insulator nanostructures demonstrated here paves the way for the implementation of topological insulators in nanoelectronics and spintronics. © 2011 Macmillan Publishers Limited. All rights reserved.

Metal-insulator-semiconductor photodetectors.

Science.gov (United States)

Lin, Chu-Hsuan; Liu, Chee Wee

2010-01-01

The major radiation of the sun can be roughly divided into three regions: ultraviolet, visible, and infrared light. Detection in these three regions is important to human beings. The metal-insulator-semiconductor photodetector, with a simpler process than the pn-junction photodetector and a lower dark current than the MSM photodetector, has been developed for light detection in these three regions. Ideal UV photodetectors with high UV-to-visible rejection ratio could be demonstrated with III-V metal-insulator-semiconductor UV photodetectors. The visible-light detection and near-infrared optical communications have been implemented with Si and Ge metal-insulator-semiconductor photodetectors. For mid- and long-wavelength infrared detection, metal-insulator-semiconductor SiGe/Si quantum dot infrared photodetectors have been developed, and the detection spectrum covers atmospheric transmission windows.

Metal-Insulator-Semiconductor Photodetectors

Directory of Open Access Journals (Sweden)

Chu-Hsuan Lin

2010-09-01

Full Text Available The major radiation of the Sun can be roughly divided into three regions: ultraviolet, visible, and infrared light. Detection in these three regions is important to human beings. The metal-insulator-semiconductor photodetector, with a simpler process than the pn-junction photodetector and a lower dark current than the MSM photodetector, has been developed for light detection in these three regions. Ideal UV photodetectors with high UV-to-visible rejection ratio could be demonstrated with III-V metal-insulator-semiconductor UV photodetectors. The visible-light detection and near-infrared optical communications have been implemented with Si and Ge metal-insulator-semiconductor photodetectors. For mid- and long-wavelength infrared detection, metal-insulator-semiconductor SiGe/Si quantum dot infrared photodetectors have been developed, and the detection spectrum covers atmospheric transmission windows.

Process for manufacturing hollow fused-silica insulator cylinder

Science.gov (United States)

Sampayan, Stephen E.; Krogh, Michael L.; Davis, Steven C.; Decker, Derek E.; Rosenblum, Ben Z.; Sanders, David M.; Elizondo-Decanini, Juan M.

2001-01-01

A method for building hollow insulator cylinders that can have each end closed off with a high voltage electrode to contain a vacuum. A series of fused-silica round flat plates are fabricated with a large central hole and equal inside and outside diameters. The thickness of each is related to the electron orbit diameter of electrons that escape the material surface, loop, and return back. Electrons in such electron orbits can support avalanche mechanisms that result in surface flashover. For example, the thickness of each of the fused-silica round flat plates is about 0.5 millimeter. In general, the thinner the better. Metal, such as gold, is deposited onto each top and bottom surface of the fused-silica round flat plates using chemical vapor deposition (CVD). Eutectic metals can also be used with one alloy constituent on the top and the other on the bottom. The CVD, or a separate diffusion step, can be used to defuse the deposited metal deep into each fused-silica round flat plate. The conductive layer may also be applied by ion implantation or gas diffusion into the surface. The resulting structure may then be fused together into an insulator stack. The coated plates are aligned and then stacked, head-to-toe. Such stack is heated and pressed together enough to cause the metal interfaces to fuse, e.g., by welding, brazing or eutectic bonding. Such fusing is preferably complete enough to maintain a vacuum within the inner core of the assembled structure. A hollow cylinder structure results that can be used as a core liner in a dielectric wall accelerator and as a vacuum envelope for a vacuum tube device where the voltage gradients exceed 150 kV/cm.

Practical Improvements to the Lee-More Conductivity Near the Metal-Insulator Transition

International Nuclear Information System (INIS)

Desjarlais, Michael P.

2000-01-01

The wide-range conductivity model of Lee and More is modified to allow better agreement with recent experimental data and theories for dense plasmas in the metal-insulator transition regime. Modifications primarily include a new ionization equilibrium model, consisting of a smooth blend between single ionization Saha (with a pressure ionization correction) and the generic Thomas-Fermi ionization equilibrium, a more accurate treatment of electron-neutral collisions using a polarization potential, and an empirical modification to the minimum allowed collision time. These simple modifications to the Lee-More algorithm permit a more accurate modeling of the physics near the metal-insulator transition, while preserving the generic Lee-More results elsewhere

Practical improvements to the Lee-More conductivity near the metal-insulator transition

International Nuclear Information System (INIS)

Desjarlais, M.P.

2001-01-01

The wide-range conductivity model of Lee and More is modified to allow better agreement with recent experimental data and theories for dense plasmas in the metal-insulator transition regime. Modifications primarily include a new ionization equilibrium model, consisting of a smooth blend between single ionization Saha (with a pressure ionization correction) and the generic Thomas-Fermi ionization equilibrium, a more accurate treatment of electron-neutral collisions using a polarization potential, and an empirical modification to the minimum allowed collision time. These simple modifications to the Lee-More algorithm permit a more accurate modeling of the physics near the metal-insulator transition, while preserving the generic Lee-More results elsewhere. (orig.)

Opportunities in chemistry and materials science for topological insulators and their nanostructures

KAUST Repository

Kong, Desheng

2011-10-24

Electrical charges on the boundaries of topological insulators favour forward motion over back-scattering at impurities, producing low-dissipation, metallic states that exist up to room temperature in ambient conditions. These states have the promise to impact a broad range of applications from electronics to the production of energy, which is one reason why topological insulators have become the rising star in condensed-matter physics. There are many challenges in the processing of these exotic materials to use the metallic states in functional devices, and they present great opportunities for the chemistry and materials science research communities. © 2011 Macmillan Publishers Limited. All rights reserved.

Insulation Cork Boards—Environmental Life Cycle Assessment of an Organic Construction Material

Science.gov (United States)

Silvestre, José D.; Pargana, Nuno; de Brito, Jorge; Pinheiro, Manuel D.; Durão, Vera

2016-01-01

Envelope insulation is a relevant technical solution to cut energy consumption and reduce environmental impacts in buildings. Insulation Cork Boards (ICB) are a natural thermal insulation material whose production promotes the recycling of agricultural waste. The aim of this paper is to determine and evaluate the environmental impacts of the production, use, and end-of-life processing of ICB. A “cradle-to-cradle” environmental Life Cycle Assessment (LCA) was performed according to International LCA standards and the European standards on the environmental evaluation of buildings. These results were based on site-specific data and resulted from a consistent methodology, fully described in the paper for each life cycle stage: Cork oak tree growth, ICB production, and end-of-life processing-modeling of the carbon flows (i.e., uptakes and emissions), including sensitivity analysis of this procedure; at the production stage—the modeling of energy processes and a sensitivity analysis of the allocation procedures; during building operation—the expected service life of ICB; an analysis concerning the need to consider the thermal diffusivity of ICB in the comparison of the performance of insulation materials. This paper presents the up-to-date “cradle-to-cradle” environmental performance of ICB for the environmental categories and life-cycle stages defined in European standards. PMID:28773516

Insulation Cork Boards-Environmental Life Cycle Assessment of an Organic Construction Material.

Science.gov (United States)

Silvestre, José D; Pargana, Nuno; de Brito, Jorge; Pinheiro, Manuel D; Durão, Vera

2016-05-20

Envelope insulation is a relevant technical solution to cut energy consumption and reduce environmental impacts in buildings. Insulation Cork Boards (ICB) are a natural thermal insulation material whose production promotes the recycling of agricultural waste. The aim of this paper is to determine and evaluate the environmental impacts of the production, use, and end-of-life processing of ICB. A "cradle-to-cradle" environmental Life Cycle Assessment (LCA) was performed according to International LCA standards and the European standards on the environmental evaluation of buildings. These results were based on site-specific data and resulted from a consistent methodology, fully described in the paper for each life cycle stage: Cork oak tree growth, ICB production, and end-of-life processing-modeling of the carbon flows ( i.e. , uptakes and emissions), including sensitivity analysis of this procedure; at the production stage-the modeling of energy processes and a sensitivity analysis of the allocation procedures; during building operation-the expected service life of ICB; an analysis concerning the need to consider the thermal diffusivity of ICB in the comparison of the performance of insulation materials. This paper presents the up-to-date "cradle-to-cradle" environmental performance of ICB for the environmental categories and life-cycle stages defined in European standards.

Insulation Cork Boards—Environmental Life Cycle Assessment of an Organic Construction Material

Directory of Open Access Journals (Sweden)

José D. Silvestre

2016-05-01

Full Text Available Envelope insulation is a relevant technical solution to cut energy consumption and reduce environmental impacts in buildings. Insulation Cork Boards (ICB are a natural thermal insulation material whose production promotes the recycling of agricultural waste. The aim of this paper is to determine and evaluate the environmental impacts of the production, use, and end-of-life processing of ICB. A “cradle-to-cradle” environmental Life Cycle Assessment (LCA was performed according to International LCA standards and the European standards on the environmental evaluation of buildings. These results were based on site-specific data and resulted from a consistent methodology, fully described in the paper for each life cycle stage: Cork oak tree growth, ICB production, and end-of-life processing-modeling of the carbon flows (i.e., uptakes and emissions, including sensitivity analysis of this procedure; at the production stage—the modeling of energy processes and a sensitivity analysis of the allocation procedures; during building operation—the expected service life of ICB; an analysis concerning the need to consider the thermal diffusivity of ICB in the comparison of the performance of insulation materials. This paper presents the up-to-date “cradle-to-cradle” environmental performance of ICB for the environmental categories and life-cycle stages defined in European standards.

Electronics. Module 2: Fundamentals of Electronics. Instructor's Guide.

Science.gov (United States)

Everett, Jim

This guide contains instructor's materials for a nine-unit secondary school course on fundamentals of electronics. The units are conductors, insulators, semiconductors, and atomic structure; basic concepts and sources of electrical quantities; Ohm's Law; units and conversions; use of multimeters; circuits; electromagnetics and electrostatics;…

Surface and Bulk Nanostructuring of Insulators by Ultrashort Laser Pulses

Science.gov (United States)

2017-04-05

non perturbative effects leading to HHG. 15. SUBJECT TERMS Nanostructuring of bulk insulators, sub-picosecond electronic and structural events , photo...time, the charge density oscillations follow the time periodicity of the incident radiation. These transient charge oscillations are exclusively due...As in section II photoexcitation and the dielectric response of laser-irradiated diamond are treated in independent particle approximation based on the

An Angle Resolved Photoemission Study of a Mott Insulator and Its Evolution to a High Temperature Superconductor

Energy Technology Data Exchange (ETDEWEB)

Ronning, Filip

2002-03-19

One of the most remarkable facts about the high temperature superconductors is their close proximity to an antiferromagnetically ordered Mott insulating phase. This fact suggests that to understand superconductivity in the cuprates we must first understand the insulating regime. Due to material properties the technique of angle resolved photoemission is ideally suited to study the electronic structure in the cuprates. Thus, a natural starting place to unlocking the secrets of high Tc would appears to be with a photoemission investigation of insulating cuprates. This dissertation presents the results of precisely such a study. In particular, we have focused on the compound Ca{sub 2-x}Na{sub x}CuO{sub 2}Cl{sub 2}. With increasing Na content this system goes from an antiferromagnetic Mott insulator with a Neel transition of 256K to a superconductor with an optimal transition temperature of 28K. At half filling we have found an asymmetry in the integrated spectral weight, which can be related to the occupation probability, n(k). This has led us to identify a d-wave-like dispersion in the insulator, which in turn implies that the high energy pseudogap as seen by photoemission is a remnant property of the insulator. These results are robust features of the insulator which we found in many different compounds and experimental conditions. By adding Na we were able to study the evolution of the electronic structure across the insulator to metal transition. We found that the chemical potential shifts as holes are doped into the system. This picture is in sharp contrast to the case of La{sub 2-x}Sr{sub x}CuO{sub 4} where the chemical potential remains fixed and states are created inside the gap. Furthermore, the low energy excitations (ie the Fermi surface) in metallic Ca{sub 1.9}Na{sub 0.1}CuO{sub 2}Cl{sub 2} is most well described as a Fermi arc, although the high binding energy features reveal the presence of shadow bands. Thus, the results in this dissertation provide a

Insulation system in an integrated motor compressor

Energy Technology Data Exchange (ETDEWEB)

Sihvo, V.

2010-07-01

A high-speed and high-voltage solid-rotor induction machine provides beneficial features for natural gas compressor technology. The mechanical robustness of the machine enables its use in an integrated motor-compressor. The technology uses a centrifugal compressor, which is mounted on the same shaft with the high-speed electrical machine driving it. No gearbox is needed as the speed is determined by the frequency converter. The cooling is provided by the process gas, which flows through the motor and is capable of transferring the heat away from the motor. The technology has been used in the compressors in the natural gas supply chain in the central Europe. New areas of application include natural gas compressors working at the wellheads of the subsea gas reservoir. A key challenge for the design of such a motor is the resistance of the stator insulation to the raw natural gas from the well. The gas contains water and heavy hydrocarbon compounds and it is far harsher than the sales gas in the natural gas supply network. The objective of this doctoral thesis is to discuss the resistance of the insulation to the raw natural gas and the phenomena degrading the insulation. The presence of partial discharges is analyzed in this doctoral dissertation. The breakdown voltage of the gas is measured as a function of pressure and gap distance. The partial discharge activity is measured on small samples representing the windings of the machine. The electrical field behavior is also modeled by finite element methods. Based on the measurements it has been concluded that the discharges are expected to disappear at gas pressures above 4 - 5 bar. The disappearance of discharges is caused by the breakdown strength of the gas, which increases as the pressure increases. Based on the finite element analysis, the physical length of a discharge seen in the PD measurements at atmospheric pressure was approximated to be 40 - 120 mum. The chemical aging of the insulation when exposed to raw

Effects of insulation on potted superconducting coils

International Nuclear Information System (INIS)

Zeller, A.F.; DeKamp, J.C.; Magsig, C.T.; Nolen, J.A.; McInturff, A.D.

1989-01-01

Test coils using identical wire but with either Formvar or Polyesterimid insulation were fabricated to determine the effects of insulation on training behavior. It was found that the type of insulation did not affect the training behavior. While considerable attention has been paid to epoxy formulations used for superconducting coils, little study has been devoted to the effects of the wire insulation on training behavior. If the insulation does not bind well with the epoxy, the wires will not be held securely in place, and training will be required to make the coil operate at its design limit. In fact, the coil may never reach its design current, showing considerable degredation. Conversely, if the epoxy-insulation reaction is to soften or weaken the insulation, then shorts and/or training may result. The authors have undertaken a study of the effects of the insulation on potted coils wet wound with Stycast 2850 FT epoxy. The wire was insulated with one of two insulting varnishes: Formvar (a polyvinyl formal resin) or Polyesterimid (a phenolic resin). Formvar is the standard insulation in the United States while Polyesterimid the European standard

Prospect of quantum anomalous Hall and quantum spin Hall effect in doped kagome lattice Mott insulators.

Science.gov (United States)

Guterding, Daniel; Jeschke, Harald O; Valentí, Roser

2016-05-17

Electronic states with non-trivial topology host a number of novel phenomena with potential for revolutionizing information technology. The quantum anomalous Hall effect provides spin-polarized dissipation-free transport of electrons, while the quantum spin Hall effect in combination with superconductivity has been proposed as the basis for realizing decoherence-free quantum computing. We introduce a new strategy for realizing these effects, namely by hole and electron doping kagome lattice Mott insulators through, for instance, chemical substitution. As an example, we apply this new approach to the natural mineral herbertsmithite. We prove the feasibility of the proposed modifications by performing ab-initio density functional theory calculations and demonstrate the occurrence of the predicted effects using realistic models. Our results herald a new family of quantum anomalous Hall and quantum spin Hall insulators at affordable energy/temperature scales based on kagome lattices of transition metal ions.

Electron lone pair distortion facilitated metal-insulator transition in β-Pb{sub 0.33}V{sub 2}O{sub 5} nanowires

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Wangoh, L.; Quackenbush, N. F. [Department of Physics, Applied Physics and Astronomy, Binghamton University, Binghamton, New York 13902 (United States); Marley, P. M.; Banerjee, S. [Department of Chemistry, University at Buffalo, The State University of New York, Buffalo, New York 14260 (United States); Sallis, S. [Materials Science and Engineering, Binghamton University, Binghamton, New York 13902 (United States); Fischer, D. A.; Woicik, J. C. [Materials Science and Engineering Laboratory, National Institute of Standards and Technology, Gaithersburg, Maryland 20899 (United States); Piper, L. F. J., E-mail: lpiper@binghamton.edu [Department of Physics, Applied Physics and Astronomy, Binghamton University, Binghamton, New York 13902 (United States); Materials Science and Engineering, Binghamton University, Binghamton, New York 13902 (United States)

2014-05-05