Comparative analysis of oxide phase formation and its effects on electrical properties of SiO{sub 2}/InSb metal-oxide-semiconductor structures

Energy Technology Data Exchange (ETDEWEB)

Lee, Jaeyel [Department of Materials Science and Engineering, Seoul National University, Seoul 151-744 (Korea, Republic of); Park, Sehun [Department of Materials Science and Engineering, Seoul National University, Seoul 151-744 (Korea, Republic of); WCU Hybrid Materials Program, Department of Materials Science and Engineering, Seoul National University, Seoul 151-744 (Korea, Republic of); Kim, Jungsub; Yang, Changjae; Kim, Sujin; Seok, Chulkyun [Department of Materials Science and Engineering, Seoul National University, Seoul 151-744 (Korea, Republic of); Park, Jinsub [Department of Electronic Engineering, Hanyang University, Seoul 133-791 (Korea, Republic of); Yoon, Euijoon, E-mail: eyoon@snu.ac.kr [Department of Materials Science and Engineering, Seoul National University, Seoul 151-744 (Korea, Republic of); WCU Hybrid Materials Program, Department of Materials Science and Engineering, Seoul National University, Seoul 151-744 (Korea, Republic of); Department of Nano Science and Technology, Graduate School of Convergence Science and Technology, Seoul National University, Suwon 443-270 (Korea, Republic of); Energy Semiconductor Research Center, Advanced Institutes of Convergence Technology, Seoul National University, Suwon 443-270 (Korea, Republic of)

2012-06-01

We report on the changes in the interfacial phases between SiO{sub 2} and InSb caused by various deposition temperatures and heat treatments. X-ray photoelectron spectroscopy (XPS) and Raman spectroscopy were used to evaluate the relative amount of each phase present at the interface. The effect of interfacial phases on the electrical properties of SiO{sub 2}/InSb metal-oxide-semiconductor (MOS) structures was investigated by capacitance-voltage (C-V) measurements. The amount of both In and Sb oxides increased with the deposition temperature. The amount of interfacial In oxide was larger for all samples, regardless of the deposition and annealing temperatures and times. In particular, the annealed samples contained less than half the amount of Sb oxide compared with the as-deposited samples, indicating a strong interfacial reaction between Sb oxide and the InSb substrate during annealing. The interface trap density sharply increased for deposition temperatures above 240 Degree-Sign C. The C-V measurements and Raman spectroscopy indicated that elemental Sb accumulation due to the interfacial reaction of Sb oxide with InSb substrate was responsible for the increased interfacial trap densities in these SiO{sub 2}/InSb MOS structures. - Highlights: Black-Right-Pointing-Pointer We report the quantitative analysis of interfacial oxides at the SiO{sub 2}/InSb interface. Black-Right-Pointing-Pointer Interfacial oxides were measured quantitatively by X-ray Photoelectron Spectroscopy. Black-Right-Pointing-Pointer As-grown and annealed samples showed different compositions of oxide phases. Black-Right-Pointing-Pointer Considerable reduction of antimony oxide phases was observed during annealing. Black-Right-Pointing-Pointer Interface trap densities at the SiO{sub 2}/InSb interface were calculated.

Metal-semiconductor, composite radiation detectors

International Nuclear Information System (INIS)

Orvis, W.J.; Yee, J.H.; Fuess, D.A.

1991-12-01

In 1989, Naruse and Hatayama of Toshiba published a design for an increased efficiency x-ray detector. The design increased the efficiency of a semiconductor detector by interspersing layers of high-z metal within it. Semiconductors such as silicon make good, high-resolution radiation detectors, but they have low efficiency because they are low-z materials (z = 14). High-z metals, on the other hand, are good absorbers of high-energy photons. By interspersing high-z metal layers with semiconductor layers, Naruse and Hatayama combined the high absorption efficiency of the high-z metals with good detection capabilities of a semiconductor. This project is an attempt to use the same design to produce a high- efficiency gamma ray detector. By their nature, gamma rays require thicker metal layers to efficiently absorb them. These thicker layers change the behavior of the detector by reducing the resolution, compared to a solid state detector, and shifting the photopeak by a predictable amount. During the last year, we have modeled parts of the detector and have nearly completed a prototype device. 2 refs

Noise analysis and performance of a selfscanned linear InSb detector array

International Nuclear Information System (INIS)

Finger, G.; Meyer, M.; Moorwood, A.F.M.

1987-01-01

A noise model for detectors operated in the capacitive discharge mode is presented. It is used to analyze the noise performance of the ESO nested timing readout technique applied to a linear 32-element InSb array which is multiplexed by a silicon switched-FET shift register. Analysis shows that KTC noise of the videoline is the major noise contribution; it can be eliminated by weighted double-correlated sampling. Best noise performance of this array is achieved at the smallest possible reverse bias voltage (not more than 20 mV) whereas excess noise is observed at higher reverse bias voltages. 5 references

Voltage transients in thin-film InSb Hall sensor

Directory of Open Access Journals (Sweden)

Alexey Bardin

Full Text Available The work is reached to study temperature transients in thin-film Hall sensors. We experimentally study InSb thin-film Hall sensor. We find transients of voltage with amplitude about 10 μV on the sensor ports after current switching. We demonstrate by direct measurements that the transients is caused by thermo-e.m.f., and both non-stationarity and heterogeneity of temperature in the film. We find significant asymmetry of temperature field for different direction of the current, which is probably related to Peltier effect. The result can be useful for wide range of scientist who works with switching of high density currents in any thin semiconductor films. 2000 MSC: 41A05, 41A10, 65D05, 65D17, Keywords: Thin-films, Semiconductors, Hall sensor, InSb, thermo-e.m.f.

Compound Semiconductor Radiation Detectors

CERN Document Server

Owens, Alan

2012-01-01

Although elemental semiconductors such as silicon and germanium are standard for energy dispersive spectroscopy in the laboratory, their use for an increasing range of applications is becoming marginalized by their physical limitations, namely the need for ancillary cooling, their modest stopping powers, and radiation intolerance. Compound semiconductors, on the other hand, encompass such a wide range of physical and electronic properties that they have become viable competitors in a number of applications. Compound Semiconductor Radiation Detectors is a consolidated source of information on all aspects of the use of compound semiconductors for radiation detection and measurement. Serious Competitors to Germanium and Silicon Radiation Detectors Wide-gap compound semiconductors offer the ability to operate in a range of hostile thermal and radiation environments while still maintaining sub-keV spectral resolution at X-ray wavelengths. Narrow-gap materials offer the potential of exceeding the spectral resolutio...

Semiconductor detectors with proximity signal readout

International Nuclear Information System (INIS)

Asztalos, Stephen J.

2012-01-01

Semiconductor-based radiation detectors are routinely used for the detection, imaging, and spectroscopy of x-rays, gamma rays, and charged particles for applications in the areas of nuclear and medical physics, astrophysics, environmental remediation, nuclear nonproliferation, and homeland security. Detectors used for imaging and particle tracking are more complex in that they typically must also measure the location of the radiation interaction in addition to the deposited energy. In such detectors, the position measurement is often achieved by dividing or segmenting the electrodes into many strips or pixels and then reading out the signals from all of the electrode segments. Fine electrode segmentation is problematic for many of the standard semiconductor detector technologies. Clearly there is a need for a semiconductor-based radiation detector technology that can achieve fine position resolution while maintaining the excellent energy resolution intrinsic to semiconductor detectors, can be fabricated through simple processes, does not require complex electrical interconnections to the detector, and can reduce the number of required channels of readout electronics. Proximity electrode signal readout (PESR), in which the electrodes are not in physical contact with the detector surface, satisfies this need

Semiconductor radiation detectors. Device physics

International Nuclear Information System (INIS)

Lutz, G.

2007-01-01

Starting from basic principles, the author, whose own contributions to these developments have been significant, describes the rapidly growing field of modern semiconductor detectors used for energy and position measurement radiation. This development was stimulated by requirements in elementary particle physics where it has led to important scientific discoveries. It has now spread to many other fields of science and technology. The book is written in a didactic way and includes an introduction to semiconductor physics. The working principles of semiconductor radiation detectors are explained in an intuitive way, followed by formal quantitative analysis. Broad coverage is also given to electronic signal readout and to the subject of radiation damage. The book is the first to comprehensively cover the semiconductor radiation detectors currently in use. It is useful as a teaching guide and as a reference work for research and applications. (orig.)

Semiconductor high-energy radiation scintillation detector

International Nuclear Information System (INIS)

Kastalsky, A.; Luryi, S.; Spivak, B.

2006-01-01

We propose a new scintillation-type detector in which high-energy radiation generates electron-hole pairs in a direct-gap semiconductor material that subsequently recombine producing infrared light to be registered by a photo-detector. The key issue is how to make the semiconductor essentially transparent to its own infrared light, so that photons generated deep inside the semiconductor could reach its surface without tangible attenuation. We discuss two ways to accomplish this, one based on doping the semiconductor with shallow impurities of one polarity type, preferably donors, the other by heterostructure bandgap engineering. The proposed semiconductor scintillator combines the best properties of currently existing radiation detectors and can be used for both simple radiation monitoring, like a Geiger counter, and for high-resolution spectrography of the high-energy radiation. An important advantage of the proposed detector is its fast response time, about 1 ns, essentially limited only by the recombination time of minority carriers. Notably, the fast response comes without any degradation in brightness. When the scintillator is implemented in a qualified semiconductor material (such as InP or GaAs), the photo-detector and associated circuits can be epitaxially integrated on the scintillator slab and the structure can be stacked-up to achieve virtually any desired absorption capability

Hybrid anode for semiconductor radiation detectors

Science.gov (United States)

Yang, Ge; Bolotnikov, Aleksey E; Camarda, Guiseppe; Cui, Yonggang; Hossain, Anwar; Kim, Ki Hyun; James, Ralph B

2013-11-19

The present invention relates to a novel hybrid anode configuration for a radiation detector that effectively reduces the edge effect of surface defects on the internal electric field in compound semiconductor detectors by focusing the internal electric field of the detector and redirecting drifting carriers away from the side surfaces of the semiconductor toward the collection electrode(s).

Semiconductors detectors: basics principals, fabrication and repair

International Nuclear Information System (INIS)

Souza Coelho, L.F. de.

1982-05-01

The fabrication and repairing techniques of semiconductor detectors, are described. These methods are shown in the way they are applied by the semiconductor detector laboratory of the KFA-Julich, where they have been developed during the last 15 years. The history of the semiconductor detectors is presented here, being also described the detector fabrication experiences inside Brazil. The key problems of manufacturing are raised. In order to understand the fabrication and repairing techniques the working principles of these detectors, are described. The cases in which worked during the stay in the KFA-Julich, particularly the fabrication of a plane Ge (Li) detector, with side entry, and the repair of a coaxial Ge (Li) is described. The vanguard problems being researched in Julich are also described. Finally it is discussed a timetable for the semiconductor detector laboratory of the UFRJ, which laboratory is in the mounting stage now. (Author) [pt

On the processing of InAs and InSb photodiode applications

Energy Technology Data Exchange (ETDEWEB)

Odendaal, V.; Botha, J.R. [Department of Physics, Nelson Mandela Metropolitan University, PO Box 77000, Nelson Mandela Metropolitan University, Port Elizabeth 6031 (South Africa); Auret, F.D. [Department of Physics, University of Pretoria, Lynnwood road, Hillcrest, Pretoria 0002 (South Africa)

2008-07-01

In this paper, potential methods for the surface passivation of InSb and InAs material, covering both compositional extremes of the promising narrow band gap semiconductor InAsSb, are evaluated. Surface states, mostly due to dangling bonds and exposure to the atmosphere, create generation-recombination centres that negatively influence the dark current, stability, efficiency and related noise characteristics of photosensitive devices fabricated from these materials. The effect of various surface treatments, including sulphuric acid based etching, lactic acid based etching, KOH anodising and Na{sub 2}S anodising, on the relative number of surface states is deduced by evaluating the capacitance versus voltage characteristics of metal-insulator-semiconductor structures fabricated on InAs and InSb. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

On the processing of InAs and InSb photodiode applications

International Nuclear Information System (INIS)

Odendaal, V.; Botha, J.R.; Auret, F.D.

2008-01-01

In this paper, potential methods for the surface passivation of InSb and InAs material, covering both compositional extremes of the promising narrow band gap semiconductor InAsSb, are evaluated. Surface states, mostly due to dangling bonds and exposure to the atmosphere, create generation-recombination centres that negatively influence the dark current, stability, efficiency and related noise characteristics of photosensitive devices fabricated from these materials. The effect of various surface treatments, including sulphuric acid based etching, lactic acid based etching, KOH anodising and Na 2 S anodising, on the relative number of surface states is deduced by evaluating the capacitance versus voltage characteristics of metal-insulator-semiconductor structures fabricated on InAs and InSb. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Metal-semiconductor, composite radiation detectors

International Nuclear Information System (INIS)

Orvis, W.J.; Yee, J.H.; Fuess, D.

1992-12-01

In 1989, Naruse and Hatayama of Toshiba published a design for an increased efficiency x-ray detector. The design increased the efficiency of a semiconductor detector by interspersing layers of high-z metal within it. Semiconductors such as silicon make good, high-resolution radiation detectors, but they have low efficiency because they are low-z materials (z = 14). High-z metals, on the other hand, are good absorbers of high-energy photons. By interspersing high-z metal layers with semiconductor layers, Naruse and Hatayama combined the high absorption efficiency of the high-z metals with the good detection capabilities of a semiconductor. This project is an attempt to use the same design to produce a high-efficiency, room temperature gamma ray detector. By their nature, gamma rays require thicker metal layers to efficiently absorb them. These thicker layers change the behavior of the detector by reducing the resolution, compared to a solid state detector, and shifting the photopeak by a predictable amount. During the last year, the authors have procured and tested a commercial device with operating characteristics similar to those of a single layer of the composite device. They have modeled the radiation transport in a multi-layered device, to verify the initial calculations of layer thickness and composition. They have modeled the electrostatic field in different device designs to locate and remove high-field regions that can cause device breakdown. They have fabricated 14 single layer prototypes

Semiconductor X-ray detectors

CERN Document Server

Lowe, Barrie Glyn

2014-01-01

Identifying and measuring the elemental x-rays released when materials are examined with particles (electrons, protons, alpha particles, etc.) or photons (x-rays and gamma rays) is still considered to be the primary analytical technique for routine and non-destructive materials analysis. The Lithium Drifted Silicon (Si(Li)) X-Ray Detector, with its good resolution and peak to background, pioneered this type of analysis on electron microscopes, x-ray fluorescence instruments, and radioactive source- and accelerator-based excitation systems. Although rapid progress in Silicon Drift Detectors (SDDs), Charge Coupled Devices (CCDs), and Compound Semiconductor Detectors, including renewed interest in alternative materials such as CdZnTe and diamond, has made the Si(Li) X-Ray Detector nearly obsolete, the device serves as a useful benchmark and still is used in special instances where its large, sensitive depth is essential. Semiconductor X-Ray Detectors focuses on the history and development of Si(Li) X-Ray Detect...

Semiconductor Detectors

International Nuclear Information System (INIS)

Cortina, E.

2007-01-01

Particle detectors based on semiconductor materials are among the few devices used for particle detection that are available to the public at large. In fact we are surrounded by them in our daily lives: they are used in photoelectric cells for opening doors, in digital photographic and video camera, and in bar code readers at supermarket cash registers. (Author)

Interface characterization of InSb MOS structures

Energy Technology Data Exchange (ETDEWEB)

Shapira, Y.; Bregman, J.; Calahorra, Z.; Goshen, R.

1982-03-26

The electrical properties of MOS devices are critically dependent on the oxide-semiconductor interface. The preparation of suitable insulating layers of oxide or other material is essential for the performance of such devices and it is particularly difficult in the case of III-V compound semiconductors. We report a method of preparing an insulating layer on InSb by a plasma oxidation process. The oxidation method will be described as well as results of the analysis of the oxide-semiconductor interface by electrical and compositional techniques. Capacitance-voltage characteristics reveal the existence of interface states which are distributed near the conduction and the valence bands with a higher density near the former. Depth profiling of the oxide by Ar/sup +/ sputtering and Auger electron spectroscopy (AES) shows that the oxide is composed of a mixture of indium oxide with antimony oxide.

Ultrafast laser-semiconductor interactions

International Nuclear Information System (INIS)

Schile, L.A.

1996-01-01

Studies of the ultrafast (< 100 fs) interactions of infrared, sub-100 fs laser pulses with IR, photosensitive semiconductor materials InGaAs, InSb, and HgCdTe are reported. Both the carrier dynamics and the associated Terahertz radiation from these materials are discussed. The most recent developments of femtosecond (< 100 fs) Optical Parametric Oscillators (OPO) has extended the wavelength range from the visible to 5.2 μm. The photogenerated semiconductor free carrier dynamics are determined in the 77 to 300 degrees K temperature range using the Transmission Correlation Peak (TCP) method. The electron-phonon scattering times are typically 200 - 600 fs. Depending upon the material composition and substrate on which the IR crystalline materials are deposited, the nonlinear TCP absorption gives recombination rates as fast as 10's of picoseconds. For the HgCdTe, there exists a 400 fs electron-phonon scattering process along with a much longer 3600 fs loss process. Studies of the interactions of these ultrashort laser pulses with semiconductors produce Terahertz (Thz) radiative pulses. With undoped InSb, there is a substantial change in the spectral content of this THz radiation between 80 - 260 degrees K while the spectrum of Te-doped InSb remains nearly unchanged, an effect attributed to its mobility being dominated by impurity scattering. At 80 degrees K, the terahertz radiation from undoped InSb is dependent on wavelength, with both a higher frequency spectrum and much larger amplitudes generated at longer wavelengths. No such effect is observed at 260 degrees K. Finally, new results on the dependence of the emitted THz radiation on the InSb crystal's orientation is presented

Gate-tunable Andreev bound states in InSb nanowire Josephson junction

Energy Technology Data Exchange (ETDEWEB)

Kang, Ning; Li, Sen; Fan, Dingxun; Xu, Hongqi [Key Laboratory for the Physics and Chemistry of Nanodevices, Department of Electronics, Peking University, Beijing 100871 (China); Caroff, Philippe [Division of Solid State Physics, Lund University, P. O. Box 118, S-221 00 Lund (Sweden)

2016-07-01

Hybrid InSb nanowire-superconductor devices are promising candidates for investigating Majorana modes in solid-state devices and future technologies of topological quantum manipulation. Here, we report low-temperature transport measurements on an individual InSb nanowire quantum dot coupled to superconducting contacts that exhibit an interplay between the Kondo effects and superconductivity. We observed two types of subgap resonance states within the superconducting gap, which can be attributed to gate-tunable Andreev bound states in Coulomb valleys with different Kondo temperatures. The presence of the gate-tunable 0 and pi junction allow us to investigate the fundamental 0- pi transition. Detailed magnetic field and temperature evolution of level spectroscopy demonstrate different behavior of two types of the Andreev bound states. Our results exhibit that the InSb nanowires can provide a promising platform for exploring phase coherence transport and the effect of spin-orbit coupling in semiconductor nanowire-superconductor hybrid device.

Miniature semiconductor detectors for in vivo dosimetry

International Nuclear Information System (INIS)

Rosenfeld, A. B.; Cutajar, D.; Lerch, M. L. F.; Takacs, G.; Cornelius, I. M.; Yudelev, M.; Zaider, M.

2006-01-01

Silicon mini-semiconductor detectors are found in wide applications for in vivo personal dosimetry and dosimetry and Micro-dosimetry of different radiation oncology modalities. These applications are based on integral and spectroscopy modes of metal oxide semiconductor field effect transistor and silicon p-n junction detectors. The advantages and limitations of each are discussed. (authors)

Semiconductor detectors in the low countries

CERN Document Server

Heijne, Erik H M

2003-01-01

Several milestones in the development of semiconductor radiation imaging detectors are attributed to scientists from the Low Countries, the Netherlands and Belgium, and a few historical details will be highlighted. The very first usable semiconductor nuclear detector was made in Utrecht, around 1943, in the form of an AgCl crystal. The earliest large-scale application of monolithic, double- sided silicon strip detectors was in the BOL experiment around 1968 at IKO, now NIKHEF, in Amsterdam. The technology developed and patented by Philips and IKO was adapted by the author and coworkers in 1980 to produce the first silicon microstrip detector used for the reconstruction of events in a CERN fixed target experiment. An avalanche of developments then led to worldwide use of silicon microstrip detectors in elementary particle physics, motivated by the capability to reconstruct particles with lifetime similar to 10**- **1**2s, which decay on sub-millimeter scale. The intensive activity in silicon detector R&D c...

Layered semiconductor neutron detectors

Science.gov (United States)

Mao, Samuel S; Perry, Dale L

2013-12-10

Room temperature operating solid state hand held neutron detectors integrate one or more relatively thin layers of a high neutron interaction cross-section element or materials with semiconductor detectors. The high neutron interaction cross-section element (e.g., Gd, B or Li) or materials comprising at least one high neutron interaction cross-section element can be in the form of unstructured layers or micro- or nano-structured arrays. Such architecture provides high efficiency neutron detector devices by capturing substantially more carriers produced from high energy .alpha.-particles or .gamma.-photons generated by neutron interaction.

Semiconductor ionizino. radiation detectors

International Nuclear Information System (INIS)

1982-01-01

Spectrometric semiconductor detectors of ionizing radiation with the electron-hole junction, based on silicon and germanium are presented. The following parameters are given for the individual types of germanium detectors: energy range of detected radiation, energy resolution given as full width at half maximum (FWHM) and full width at one tenth of maximum (FWTM) for 57 Co and 60 Co, detection sensitivity, optimal voltage, and electric capacitance at optimal voltage. For silicon detectors the value of FWHM for 239 Pu is given, the sensitive area and the depth of the sensitive area. (E.S.)

Performance analysis of InSb based QWFET for ultra high speed applications

International Nuclear Information System (INIS)

Subash, T. D.; Gnanasekaran, T.; Divya, C.

2015-01-01

An indium antimonide based QWFET (quantum well field effect transistor) with the gate length down to 50 nm has been designed and investigated for the first time for L-band radar applications at 230 GHz. QWFETs are designed at the high performance node of the International Technology Road Map for Semiconductors (ITRS) requirements of drive current (Semiconductor Industry Association 2010). The performance of the device is investigated using the SYNOPSYS CAD (TCAD) software. InSb based QWFET could be a promising device technology for very low power and ultra-high speed performance with 5–10 times low DC power dissipation. (semiconductor devices)

Semiconductor detector physics

International Nuclear Information System (INIS)

Equer, B.

1987-01-01

Comprehension of semiconductor detectors follows comprehension of some elements of solid state physics. They are recalled here, limited to the necessary physical principles, that is to say the conductivity. P-n and MIS junctions are discussed in view of their use in detection. Material and structure (MOS, p-n, multilayer, ..) are also reviewed [fr

Mercuric iodide semiconductor detectors encapsulated in polymeric resin

Energy Technology Data Exchange (ETDEWEB)

Martins, Joao F. Trencher; Santos, Robinson A. dos; Ferraz, Caue de M.; Oliveira, Adriano S.; Velo, Alexandre F.; Mesquita, Carlos H. de; Hamada, Margarida M., E-mail: mmhamada@ipen.br [Instituto de Pesquisas Energeticas e Nucleares (IPEN/CNEN-SP), Sao Paulo, SP (Brazil); Disch, Christian; Fiederle, Michael [Albert-Ludwigs Universität Freiburg - UniFreibrug, Freiburg Materials Research Center - FMF, Freiburg (Germany)

2015-07-01

The development of new semiconductor radiation detectors always finds many setback factors, such as: high concentration of impurities in the start materials, poor long term stability, the surface oxidation and other difficulties discussed extensively in the literature, that limit their use. In this work was studied, the application of a coating resin on HgI2 detectors, in order to protect the semiconductor crystal reactions from atmospheric gases and to isolate electrically the surface of the crystals. Four polymeric resins were analyzed: Resin 1: 50% - 100%Heptane, 10% - 25% methylcyclohexane, <1% cyclohexane; Resin 2: 25% - 50% ethanol, 25% - 50% acetone, <2,5% ethylacetate; Resin 3: 50% - 100% methylacetate, 5% - 10% n-butylacetate; Resin 4: 50% - 100% ethyl-2-cyanacrylat. The influence of the polymeric resin type used on the spectroscopic performance of the HgI{sub 2} semiconductor detector is, clearly, demonstrated. The better result was found for the detector encapsulated with Resin 3. An increase of up to 26 times at the stability time was observed for the detectors encapsulated compared to that non-encapsulated detector. (author)

Current responsivity of semiconductor superlattice THz-photon detectors

DEFF Research Database (Denmark)

Ignatov, Anatoly A.; Jauho, Antti-Pekka

1999-01-01

The current responsivity of a semiconductor superlattice THz-photon detector is calculated using an equivalent circuit model which takes into account the finite matching efficiency between a detector antenna and the superlattice in the presence of parasitic losses. Calculations performed for curr......The current responsivity of a semiconductor superlattice THz-photon detector is calculated using an equivalent circuit model which takes into account the finite matching efficiency between a detector antenna and the superlattice in the presence of parasitic losses. Calculations performed...... for currently available superlattice diodes show that both the magnitudes and the roll-off frequencies of the responsivity are strongly influenced by an excitation of hybrid plasma-Bloch oscillations which are found to be eigenmodes of the system in the THz-frequency band. The expected room temperature values...... of the responsivity (2–3 A/W in the 1–3 THz-frequency band) range up to several percents of the quantum efficiency e/[h-bar] omega of an ideal superconductor tunnel junction detector. Properly designed semiconductor superlattice detectors may thus demonstrate better room temperature THz-photon responsivity than...

Size-dependent nonlocal effects in plasmonic semiconductor particles

DEFF Research Database (Denmark)

Maack, Johan Rosenkrantz; Mortensen, N. Asger; Wubs, Martijn

2017-01-01

Localized surface plasmons (LSP) in semiconductor particles are expected to exhibit spatial nonlocal response effects as the geometry enters the nanometer scale. To investigate these nonlocal effects, we apply the hydrodynamic model to nanospheres of two different semiconductor materials: intrinsic...... InSb and n-doped GaAs. Our results show that the semiconductors indeed display nonlocal effects, and that these effects are even more pronounced than in metals. In a 150 nm InSb particle at 300 K, the LSP frequency is blueshifted 35%, which is orders of magnitude larger than the blueshift in a metal...... particle of the same size. This property, together with their tunability, makes semiconductors a promising platform for experiments in nonlocal effects. Copyright (C)EPLA, 2017...

Front-end electronics for multichannel semiconductor detector systems

CERN Document Server

Grybos, P

2010-01-01

Front-end electronics for multichannel semiconductor detektor systems Volume 08, EuCARD Editorial Series on Accelerator Science and Technology The monograph is devoted to many different aspects related to front-end electronics for semiconductor detector systems, namely: − designing and testing silicon position sensitive detectors for HEP experiments and X-ray imaging applications, − designing and testing of multichannel readout electronics for semiconductor detectors used in X-ray imaging applications, especially for noise minimization, fast signal processing, crosstalk reduction and good matching performance, − optimization of semiconductor detection systems in respect to the effects of radiation damage. The monograph is the result mainly of the author's experience in the above-mentioned areas and it is an attempt of a comprehensive presentation of issues related to the position sensitive detection system working in a single photon counting mode and intended to X-ray imaging applications. The structure...

Radiation damage in semiconductor detectors

International Nuclear Information System (INIS)

Kraner, H.W.

1981-12-01

A survey is presented of the important damage-producing interactions in semiconductor detectors and estimates of defect numbers are made for MeV protons, neutrons and electrons. Damage effects of fast neutrons in germanium gamma ray spectrometers are given in some detail. General effects in silicon detectors are discussed and damage constants and their relationship to leakage current is introduced

Semiconductor neutron detectors based on new types of materials

International Nuclear Information System (INIS)

Pochet, T.; Foulon, F.

1993-01-01

Neutron detection in hostile environments such as nuclear reactors has been performed using a new kind of semiconductor detector. So far, crystalline semiconductor detectors are not used in nuclear reactor instrumentation because of their sensitivity to radiation damage. For doses in excess of a few tens of kilo rads, radiation induced lattice defects produce a strong loss in the standard semiconductor detector performances. In the last few years, new semiconductor materials having amorphous or polycrystalline structures such as silicon, silicon carbide or CVD diamond, became available. These semiconductors, produced by Chemical Vapor Deposition, come in the form of thin layers being typically a few tens of micron thick. Their crystalline structure is particularly resistant to radiation damage up to a few Mrads but prevent the material use in spectrometry measurements. Nevertheless, these detectors, working in a counting mode, are suitable for the detection of alpha particles produced by the neutron capture reaction with boron. Such thin film detectors have a very poor sensitivity to γ-ray background. Furthermore, they are easier and cheaper to implement than current neutron gas counters. Preliminary results obtained with diamond and amorphous silicon diodes exposed to α particles are presented. (authors). 7 figs., 3 tabs., 11 refs

Semiconductor detectors in the low countries

International Nuclear Information System (INIS)

Heijne, Erik H.M.

2003-01-01

Several milestones in the development of semiconductor radiation imaging detectors are attributed to scientists from the Low Countries, the Netherlands and Belgium, and a few historical details will be highlighted. The very first usable semiconductor nuclear detector was made in Utrecht, around 1943, in the form of an AgCl crystal. The earliest large-scale application of monolithic, double-sided silicon strip detectors was in the BOL experiment around 1968 at IKO, now NIKHEF, in Amsterdam. The technology developed and patented by Philips and IKO was adapted by the author and coworkers in 1980 to produce the first silicon microstrip detector used for the reconstruction of events in a CERN fixed target experiment. An avalanche of developments then led to worldwide use of silicon microstrip detectors in elementary particle physics, motivated by the capability to reconstruct particles with lifetime ∼10 -12 s, which decay on sub-millimeter scale. The intensive activity in silicon detector R and D culminated in 1991 in the construction of fine-grained 2D monolithic and hybrid pixel detectors that incorporate sophisticated electronic functions in each microscopic detection element, with typical dimensions of 25-100 μm. Besides being a powerful high intensity tracker for particle physics, this device can also be designed as a new X-ray imager, which allows selective counting of individual photons in each pixel at MHz frequency

Terahertz tunable detection in self-switching diodes based on high mobility semiconductors: InGaAs, InAs and InSb

International Nuclear Information System (INIS)

Iniguez-de-la-Torre, I; Rodilla, H; Mateos, J; Pardo, D; Gonzalez, T; Song, A M

2009-01-01

In this work we report on the use of high mobility materials in the channel of self-switching diodes as potential candidates for terahertz operation. By means of Monte Carlo simulations we envisage the feasibility of tuneable-by-geometry detection in the terahertz range. The low effective mass of InAs and InSb in relation to InGaAs enhances ballistic transport inside the diode, thus improving the amplitude and quality factor of the resonance found in the detection spectra of self-switching diodes. The frequency of the resonant peak is also increased with the use of these narrow band gap semiconductors. The analysis of the noise spectra provides useful information about the origin of the resonance. By decreasing temperature below 300 K, a clear improvement in detection sensitivity is also achieved.

Terahertz tunable detection in self-switching diodes based on high mobility semiconductors: InGaAs, InAs and InSb

Energy Technology Data Exchange (ETDEWEB)

Iniguez-de-la-Torre, I; Rodilla, H; Mateos, J; Pardo, D; Gonzalez, T [Departamento de Fisica Aplicada, Universidad de Salamanca, Plaza de la Merced s/n, 37008 Salamanca (Spain); Song, A M, E-mail: indy@usal.e [School of Electrical and Electronic Engineering, University of Manchester, Manchester M60 1QD (United Kingdom)

2009-11-15

In this work we report on the use of high mobility materials in the channel of self-switching diodes as potential candidates for terahertz operation. By means of Monte Carlo simulations we envisage the feasibility of tuneable-by-geometry detection in the terahertz range. The low effective mass of InAs and InSb in relation to InGaAs enhances ballistic transport inside the diode, thus improving the amplitude and quality factor of the resonance found in the detection spectra of self-switching diodes. The frequency of the resonant peak is also increased with the use of these narrow band gap semiconductors. The analysis of the noise spectra provides useful information about the origin of the resonance. By decreasing temperature below 300 K, a clear improvement in detection sensitivity is also achieved.

Instrumentation for characterizing materials and composed semiconductors for ionizing radiation detectors

International Nuclear Information System (INIS)

Paschoal, Arquimedes J.A.; Leite, Adolfo M.B.; Nazzre, Fabio V.B.; Santos, Luiz A.P.

2007-01-01

The purpose of this work is the development of instrumentation for characterizing some type of ionizing radiation detectors. Those detectors are being manufactured by the Nuclear Instrumentation Laboratory at CRCN/Recife and can be used both on photon beam and with particles. Such detectors consist of semiconductor material in the form of films generated by oxide growing or by means of semiconductor material deposition in a substrate. Those materials can be made of metals, semi-metals, composites or semiconductor polymers. Prior to expose those detectors to ionizing radiation, it must be physically and electrically characterized. In this intention it was developed an electromechanical system. An electrical circuit was built to measure the signal from the detector and another circuit to control the movement of four probes (4-points technique) by using a stepper motor and the micro stepping technique avoiding damage to the detector. This system can be of interest to researchers that work with a sort of semiconductor materials in the form of thin film and in nanotechnological processes aiming the design of radiation ionizing detectors. (author)

Making the semiconductor-metal transition in a growth-dominant phase-change alloy InSb for double density blu-ray super-RENS-ROM disc

Energy Technology Data Exchange (ETDEWEB)

Hyot, Berangere [CEA, LETI, MINATEC, F- 38054 Grenoble (France)

2012-10-15

Phenomenologically, a semiconductor-metal transition is characterized by a sudden change in electrical properties but also in optical behaviours, as a consequence of a change in electron behaviour. The ability to induce a reversible semiconductor-metal transition in a material by varying conditions such as applied temperature or electrical field, results in attractive changes in properties that have fuelled the curiosity of scientists. In this paper, we discuss the interest of such materials exhibiting the reversible semiconductor-metal transition in the development of the next generation of optical Bly-ray discs (BD), the so-called super-resolution near field structure (super-RENS) discs and we show that InSb semiconductor material exhibits huge variations of its optical properties during the optically (thermally)-induced solid-to-liquid change corresponding to a semiconductor-metal transition. First success in the video playback on HDTV (High Definition TeleVision) display from 50 GB (BD capacity x 2) InSb-based super-RENS-ROM discs including a high definition video content with 1920 x 1080 pixels was realized in September 2009 by the super-RENS consortium joining three partners: AIST (National Institute of Advanced Industrial Science and Technology), Mitsubishi Electric Co. and LETI. Snapshot of high definition video content from InSb-based super-RENS-ROM disc corresponding to 50 GB per layer (BD capacity x 2) displayed on HDTV. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Induced Charge Fluctuations in Semiconductor Detectors with a Cylindrical Geometry

Science.gov (United States)

Samedov, Victor V.

2018-01-01

Now, compound semiconductors are very appealing for hard X-ray room-temperature detectors for medical and astrophysical applications. Despite the attractive properties of compound semiconductors, such as high atomic number, high density, wide band gap, low chemical reactivity and long-term stability, poor hole and electron mobility-lifetime products degrade the energy resolution of these detectors. The main objective of the present study is in development of a mathematical model of the process of the charge induction in a cylindrical geometry with accounting for the charge carrier trapping. The formulae for the moments of the distribution function of the induced charge and the formulae for the mean amplitude and the variance of the signal at the output of the semiconductor detector with a cylindrical geometry were derived. It was shown that the power series expansions of the detector amplitude and the variance in terms of the inverse bias voltage allow determining the Fano factor, electron mobility lifetime product, and the nonuniformity level of the trap density of the semiconductor material.

Fabrication of prototypes of Ge(li) semiconductor detector

International Nuclear Information System (INIS)

Santos, W.M.S.; Marti, G.V.; Rizzo, P.; Barros, S. de.

1987-01-01

The fabrication process of Ge(Li) semiconductor detector prototypes, from specific chemical treatments of doped monocrystal with receptor impurities (p + semicondutor) is presented. The detector characteristics, such as resulotion and operation tension are shown. (M.C.K.) [pt

Semiconductor radiation detector

Science.gov (United States)

Bell, Zane W.; Burger, Arnold

2010-03-30

A semiconductor detector for ionizing electromagnetic radiation, neutrons, and energetic charged particles. The detecting element is comprised of a compound having the composition I-III-VI.sub.2 or II-IV-V.sub.2 where the "I" component is from column 1A or 1B of the periodic table, the "II" component is from column 2B, the "III" component is from column 3A, the "IV" component is from column 4A, the "V" component is from column 5A, and the "VI" component is from column 6A. The detecting element detects ionizing radiation by generating a signal proportional to the energy deposited in the element, and detects neutrons by virtue of the ionizing radiation emitted by one or more of the constituent materials subsequent to capture. The detector may contain more than one neutron-sensitive component.

Radiation-hard semiconductor detectors for SuperLHC

CERN Document Server

Bruzzi, Mara; Al-Ajili, A A; Alexandrov, P; Alfieri, G; Allport, Philip P; Andreazza, A; Artuso, M; Assouak, S; Avset, B S; Barabash, L; Baranova, E; Barcz, A; Basile, A; Bates, R; Belova, N; Betta, G F D; Biagi, S F; Bilei, G M; Bisello, D; Blue, A; Blumenau, A; Boisvert, V; Bölla, G; Bondarenko, G B; Borchi, E; Borrello, L; Bortoletto, D; Boscardin, M; Bosisio, L; Bowcock, T J V; Brodbeck, T J; Broz, J; Brukhanov, A; Brzozowski, A; Buda, M; Buhmann, P; Buttar, C; Campabadal, F; Campbell, D; Candelori, A; Casse, G; Cavallini, A; Chilingarov, A G; Chren, D; Cindro, V; Citterio, M; Collins, P; Coluccia, R; Contarato, D; Coutinho, J; Creanza, D; Cunningham, W; Cvetkov, V; Davies, G; Dawson, I; De Palma, M; Demina, R; Dervan, P; Dierlamm, A; Dittongo, S; Dobrzanski, L; Dolezal, Z; Dolgolenko, A; Eberlein, T; Eremin, V; Fall, C; Fasolo, F; Ferbel, T; Fizzotti, F; Fleta, C; Focardi, E; Forton, E; Franchenko, S; Fretwurst, E; Gamaz, F; García-Navarro, J E; García, C; Gaubas, E; Genest, M H; Gill, K A; Giolo, K; Glaser, M; Gössling, C; Golovine, V; Gorelov, I; Goss, J; Gouldwell, A; Grégoire, G; Gregori, P; Grigoriev, E; Grigson, C; Grillo, A; Groza, A; Guskov, J; Haddad, L; Harding, R; Härkönen, J; Hauler, F; Hayama, S; Hoeferkamp, M; Honniger, F; Horazdovsky, T; Horisberger, R P; Horn, M; Houdayer, A; Hourahine, B; Hruban, A; Hughes, G; Ilyashenko, Yu S; Irmscher, K; Ivanov, A; Jarasiunas, K; Jin, T; Jones, B K; Jones, R; Joram, C; Jungermann, L; Kalinina, E; Kaminski, P; Karpenko, A; Karpov, A; Kazlauskiene, V; Kazukauskas, V; Khivrich, V; Khomenkov, V P; Kierstead, J A; Klaiber Lodewigs, J M; Kleverman, M; Klingenberg, R; Kodys, P; Kohout, Z; Korjenevski, S; Kowalik, A; Kozlowski, R; Kozodaev, M; Kramberger, G; Krasel, O; Kuznetsov, A; Kwan, S; Lagomarsino, S; Lari, T; Lassila-Perini, K M; Lastovetsky, V F; Latino, G; Latushkin, S T; Lazanu, I; Lazanu, S; Lebel, C; Leinonen, K; Leroy, C; Li, Z; Lindström, G; Lindström, L; Linhart, V; Litovchenko, A P; Litovchenko, P G; Litvinov, V; Lo Giudice, A; Lozano, M; Luczynski, Z; Luukka, Panja; Macchiolo, A; Mainwood, A; Makarenko, L F; Mandic, I; Manfredotti, C; Martí i García, S; Marunko, S; Mathieson, K; Melone, J; Menichelli, D; Meroni, C; Messineo, A; Miglio, S; Mikuz, M; Miyamoto, J; Moll, M; Monakhov, E; Moscatelli, F; Mozzanti, A; Murin, L; Naoumov, D; Nava, F; Nossarzhevska, E; Nummela, S; Nysten, J; Olivero, P; O'Shea, V; Palviainen, T; Paolini, C; Parkes, C; Passeri, D; Pein, U; Pellegrini, G; Perera, L; Petasecca, M; Piatkowski, B; Piemonte, C; Pignatel, G U; Pinho, N; Pintilie, I; Pintilie, L; Polivtsev, L; Polozov, P; Popa, A I; Popule, J; Pospísil, S; Pucker, G; Radicci, V; Rafí, J M; Ragusa, F; Rahman, M; Rando, R; Röder, R; Rohe, T; Ronchin, S; Rott, C; Roy, A; Roy, P; Ruzin, A; Ryazanov, A; Sadrozinski, H F W; Sakalauskas, S; Scaringella, M; Schiavulli, L; Schnetzer, S; Schumm, B; Sciortino, S; Scorzoni, A; Segneri, G; Seidel, S; Seiden, A; Sellberg, G; Sellin, P J; Sentenac, D; Sevilla, S G; Shipsey, I; Sícho, P; Sloan, T; Solar, M; Son, S; Sopko, B; Spencer, N; Stahl, J; Stavitski, I; Stolze, D; Stone, R; Storasta, J; Strokan, N; Strupinski, W; Sudzius, M; Surma, B; Suuronen, J; Suvorov, A; Svensson, B G; Tipton, P; Tomasek, M; Troncon, C; Tsvetkov, A; Tuominen, E; Tuovinen, E; Tuuva, T; Tylchin, M; Uebersee, H; Uher, J; Ullán, M; Vaitkus, J V; Vanni, P; Velthuis, J; Verbitskaya, E; Verzellesi, G; Vrba, V; Wagner, G; Wilhelm, I; Worm, S; Wright, V; Wunstorf, R; Zabierowski, P; Zaluzhny, A; Zavrtanik, M; Zen, M; Zhukov, V; Zorzi, N; de Boer, Wim

2005-01-01

An option of increasing the luminosity of the Large Hadron Collider (LHC) at CERN to 10/sup 35/ cm-/sup 2/s-/sup 1/ has been envisaged to extend the physics reach of the machine. An efficient tracking down to a few centimetres from the interaction point will be required to exploit the physics potential of the upgraded LHC. As a consequence, the semiconductor detectors close to the interaction region will receive severe doses of fast hadron irradiation and the inner tracker detectors will need to survive fast hadron fluences of up to above 10 /sup 16/ cm-/sup 2/. The CERN-RD50 project "Development of Radiation Hard Semiconductor Devices for Very High Luminosity Colliders" has been established in 2002 to explore detector materials and technologies that will allow to operate devices up to, or beyond, this limit. The strategies followed by RD50 to enhance the radiation tolerance include the development of new or defect engineered detector materials (SiC, GaN, Czochralski and epitaxial silicon, oxygen enriched Flo...

Ballistic transport and quantum interference in InSb nanowire devices

International Nuclear Information System (INIS)

Li Sen; Huang Guang-Yao; Guo Jing-Kun; Kang Ning; Xu Hong-Qi; Caroff, Philippe

2017-01-01

An experimental realization of a ballistic superconductor proximitized semiconductor nanowire device is a necessary step towards engineering topological quantum electronics. Here, we report on ballistic transport in InSb nanowires grown by molecular-beam epitaxy contacted by superconductor electrodes. At an elevated temperature, clear conductance plateaus are observed at zero magnetic field and in agreement with calculations based on the Landauer formula. At lower temperature, we have observed characteristic Fabry–Pérot patterns which confirm the ballistic nature of charge transport. Furthermore, the magnetoconductance measurements in the ballistic regime reveal a periodic variation related to the Fabry–Pérot oscillations. The result can be reasonably explained by taking into account the impact of magnetic field on the phase of ballistic electron’s wave function, which is further verified by our simulation. Our results pave the way for better understanding of the quantum interference effects on the transport properties of InSb nanowires in the ballistic regime as well as developing of novel device for topological quantum computations. (paper)

Electron Beam Induced Radiation Damage of the Semiconductor Radiation Detector based on Silicon

International Nuclear Information System (INIS)

Kim, Han Soo; Kim, Yong Kyun; Park, Se Hwan; Haa, Jang Ho; Kang, Sang Mook; Chung, Chong Eun; Cho, Seung Yeon; Park, Ji Hyun; Yoon, Tae Hyung

2005-01-01

A Silicon Surface Barrier (SSB) semiconductor detector which is generally used to detect a charged particle such as an alpha particle was developed. The performance of the developed SSB semiconductor detector was measured with an I-V curve and an alpha spectrum. The response for an alpha particle was measured by Pu-238 sources. A SSB semiconductor detector was irradiated firstly at 30sec, at 30μA and secondly 40sec, 40μA with a 2MeV pulsed electron beam generator in KAERI. And the electron beam induced radiation damage of a homemade SSB detector and the commercially available PIN photodiode were investigated. An annealing effect of the damaged SSB and PIN diode detector were also investigated using a Rapid Thermal Annealing (RTA). This data may assist in designing the silicon based semiconductor radiation detector when it is operated in a high radiation field such as space or a nuclear power plant

Measurement of neutron flux by semiconductor detector; Merenje raspodele neutronskog fluksa poluprovodnickim detektorom

Energy Technology Data Exchange (ETDEWEB)

Obradovic, D; Bosevski, T [The Institute of Nuclear Sciences Boris Kidric, Vinca, Beograd (Yugoslavia)

1965-07-01

Using semiconductor detectors for measuring the neutron flux distribution is considered suitable and faster than using activation foils. Results of radial neutron flux distribution obtained by semiconductor detectors are presented.

Wake fields in semiconductor plasmas

International Nuclear Information System (INIS)

Berezhiani, V.I.; Mahajan, S.M.

1994-05-01

It is shown that an intense short laser pulse propagating through a semiconductor plasma will generated longitudinal Langmuir waves in its wake. The measurable wake field can be used as a diagnostic to study nonlinear optical phenomena. For narrow gap semiconductors (for examples InSb) with Kane-type dispersion relation, the system can simulate, at currently available laser powers, the physics underlying wake-field accelerators. (author). 9 refs, 1 fig

Superconducting detectors for semiconductor quantum photonics

International Nuclear Information System (INIS)

Reithmaier, Guenther M.

2015-01-01

In this thesis we present the first successful on-chip detection of quantum light, thereby demonstrating the monolithic integration of superconducting single photon detectors with individually addressable semiconductor quantum dots in a prototypical quantum photonic circuit. Therefore, we optimized both the deposition of high quality superconducting NbN thin films on GaAs substrates and the fabrication of superconducting detectors and successfully integrated these novel devices with GaAs/AlGaAs ridge waveguides loaded with self-assembled InGaAs quantum dots.

Application of energy dispersive X-ray spectrometers with semiconductor detectors in radiometric analyses

International Nuclear Information System (INIS)

Jugelt, P.; Schieckel, M.

1983-01-01

Problems and possibilities of applying semiconductor detector spectrometers in radiometric analyses are described. A summary of the state of the art and tendencies of device engineering and spectra evaluation is given. Liquid-nitrogen cooled Li-drifted Si-detectors and high-purity Ge-detectors are compared. Semiconductor detectors working at room temperature are under development. In this connection CdTe and HgI 2 semiconductor detectors are compared. The use of small efficient computers in the spectrometer systems stimulates the development of algorithms for spectra analyses and for determining the concentration. Fields of application of energy dispersive X-ray spectrometers are X-ray diffraction and X-ray macroanalysis in investigating the structure of extensive surface regions

Measurement of ionising radiation semiconductor detectors: a review

International Nuclear Information System (INIS)

Aussel, J.P.

1986-06-01

Manufacturing techniques for nuclear detectors using semiconductors are constantly advancing, and a large range of models with different specificities and characteristics are available. After a theoretical reminder, this report describes the main types of detectors, their working and their preferential use. A comparative table guides the neophyte reader in his choice [fr

Solid state semiconductor detectorized survey meter

International Nuclear Information System (INIS)

Okamoto, Eisuke; Nagase, Yoshiyuki; Furuhashi, Masato

1987-01-01

Survey meters are used for measurement of gamma ray dose rate of the space and the surface contamination dencity that the atomic energy plant and the radiation facility etc. We have recently developed semiconductor type survey meter (Commercial name: Compact Survey Meter). This survey meter is a small-sized dose rate meter with excellent function. The special features are using semiconductor type detector which we have developed by our own technique, stablar wide range than the old type, long life, and easy to carry. Now we introduce the efficiency and the function of the survey meter. (author)

1-D position sensitive single carrier semiconductor detectors

International Nuclear Information System (INIS)

Zhong He; Knoll, G.F.; Wehe, D.K.; Rojeski, R.; Mastrangelo, C.H.; Hammig, M.; Barrett, C.; Uritani, A.

1996-01-01

A single polarity charge sensing method has been studied using coplanar electrodes on 5 mm cubes of CdZnTe γ-ray detectors. This method can ameliorate the hole trapping problem of room-temperature semiconductor detectors. Our experimental results confirm that the energy resolution is dramatically improved compared with that obtained using the conventional readout method, but is still about an order of magnitude worse than the theoretical limit. A method to obtain the γ-ray interaction depth between the cathode and the anode is presented here. This technique could be used to correct for the electron trapping as a function of distance from the coplanar electrodes. Experimental results showed that a position resolution of about 0.9 mm FWHM at 122 keV can be obtained. These results will be of interest in the design of higher performance room-temperature semiconductor γ-ray detectors. (orig.)

Beat-wave generation of plasmons in semiconductor plasmas

International Nuclear Information System (INIS)

Berezhiani, V.I.; Mahajan, S.M.

1995-08-01

It is shown that in semiconductor plasmas, it is possible to generate large amplitude plasma waves by the beating of two laser beams with frequency difference close to the plasma frequency. For narrow gap semiconductor (for example n-type InSb), the system can simulate the physics underlying beat wave generation in relativistic gaseous plasmas. (author). 7 refs

Voltage transients in thin-film InSb Hall sensor

Science.gov (United States)

Bardin, Alexey; Ignatjev, Vyacheslav; Orlov, Andrey; Perchenko, Sergey

The work is reached to study temperature transients in thin-film Hall sensors. We experimentally study InSb thin-film Hall sensor. We find transients of voltage with amplitude about 10 μ V on the sensor ports after current switching. We demonstrate by direct measurements that the transients is caused by thermo-e.m.f., and both non-stationarity and heterogeneity of temperature in the film. We find significant asymmetry of temperature field for different direction of the current, which is probably related to Peltier effect. The result can be useful for wide range of scientist who works with switching of high density currents in any thin semiconductor films.

A New Approach for Evaluating Charge Transport Properties of Semiconductor Detectors

International Nuclear Information System (INIS)

Kim, Kyung O; Kim, Jong Kyung; Kim, Soon Young; Ha, Jang Ho

2009-01-01

The semiconductor detectors (e.g., CdTe, CdZnTe, and HgI 2 ) have been widely used for radiation detection and medical imaging because of its various outstanding features such as excellent energy resolution, wide bandgap energy, room temperature operation, and so on. Unfortunately, the performance of these detectors is mainly limited by the charge transport properties of semiconductor, especially the mobility-lifetime products (i.e., (μτ) e and ((μτ) h ). Hence, the analysis on the mobility-lifetime products is very important for evaluating correct characteristics of semiconductor detectors. A commonly used method to analyze the mobilitylifetime products is based on their responses to α particle. However, the α particle method cannot evaluate the ((μτ)h product in many cases, because a semiconductor detector operating at positive bias voltages often yields the energy spectrum without the peaks. This method is also known to be very sensitive to the experimental conditions as well as surface conditions of the detector. In this study, a new approach with gamma-ray instead of α particle was carried out to solve the determination difficulty of the ((μτ) h product with common method. The special relation between the two mobility-lifetime products, which we call the 'Nural equation', was also developed to simply obtain each parameter based on Hecht equation

Basic processes and scintillator and semiconductor detectors

International Nuclear Information System (INIS)

Bourgeois, C.

1994-01-01

In the following course, the interaction of heavy charged particles, electrons and Γ with matter is represented. Two types of detectors are studied, organic and inorganic scintillators and semiconductors. The signal formation is analysed. (author). 13 refs., 48 figs., 5 tabs

Design of a multiband near-infrared sky brightness monitor using an InSb detector.

Science.gov (United States)

Dong, Shu-Cheng; Wang, Jian; Tang, Qi-Jie; Jiang, Feng-Xin; Chen, Jin-Ting; Zhang, Yi-Hao; Wang, Zhi-Yue; Chen, Jie; Zhang, Hong-Fei; Jiang, Hai-Jiao; Zhu, Qing-Feng; Jiang, Peng; Ji, Tuo

2018-02-01

Infrared sky background level is an important parameter of infrared astronomy observations from the ground, particularly for a candidate site of an infrared capable observatory since low background level is required for such a site. The Chinese astronomical community is looking for a suitable site for a future 12 m telescope, which is designed for working in both optical and infrared wavelengths. However, none of the proposed sites has been tested for infrared observations. Nevertheless, infrared sky background measurements are also important during the design of infrared observing instruments. Based on the requirement, in order to supplement the current site survey data and guide the design of future infrared instruments, a multiband near-infrared sky brightness monitor (MNISBM) based on an InSb sensor is designed in this paper. The MNISBM consists of an optical system, mechanical structure and control system, detector and cooler, high gain readout electronics, and operational software. It is completed and tested in the laboratory. The results show that the sensitivity of the MNISBM meets the requirements of the measurement of near-infrared sky background level of several well-known astronomical infrared observing sites.

Design of a multiband near-infrared sky brightness monitor using an InSb detector

Science.gov (United States)

Dong, Shu-cheng; Wang, Jian; Tang, Qi-jie; Jiang, Feng-xin; Chen, Jin-ting; Zhang, Yi-hao; Wang, Zhi-yue; Chen, Jie; Zhang, Hong-fei; Jiang, Hai-jiao; Zhu, Qing-feng; Jiang, Peng; Ji, Tuo

2018-02-01

Infrared sky background level is an important parameter of infrared astronomy observations from the ground, particularly for a candidate site of an infrared capable observatory since low background level is required for such a site. The Chinese astronomical community is looking for a suitable site for a future 12 m telescope, which is designed for working in both optical and infrared wavelengths. However, none of the proposed sites has been tested for infrared observations. Nevertheless, infrared sky background measurements are also important during the design of infrared observing instruments. Based on the requirement, in order to supplement the current site survey data and guide the design of future infrared instruments, a multiband near-infrared sky brightness monitor (MNISBM) based on an InSb sensor is designed in this paper. The MNISBM consists of an optical system, mechanical structure and control system, detector and cooler, high gain readout electronics, and operational software. It is completed and tested in the laboratory. The results show that the sensitivity of the MNISBM meets the requirements of the measurement of near-infrared sky background level of several well-known astronomical infrared observing sites.

First-principles study of size-, surface- and mechanical strain-dependent electronic properties of wurtzite and zinc-blende InSb nanowires

Energy Technology Data Exchange (ETDEWEB)

Zhang, Yong [School of Mathematics, Physics and Energy Engineering, Hunan Institute of Technology, Hengyang 421002 (China); Xie, Zhong-Xiang, E-mail: xiezxhu@163.com [School of Mathematics, Physics and Energy Engineering, Hunan Institute of Technology, Hengyang 421002 (China); Yu, Xia; Wang, Hai-Bin; Deng, Yuan-Xiang [School of Mathematics, Physics and Energy Engineering, Hunan Institute of Technology, Hengyang 421002 (China); Ning, Feng, E-mail: fning@gxtc.edu.cn [College of Physics and Electronic Engineering, Guangxi Teachers Education University, Nanning 530001 (China)

2016-08-06

Using first-principle calculations with density functional theory, we investigated the modification of electronic properties in zinc-blende (ZB) and wurtzite (WZ) InSb nanowires (NWs) grown along the [111] and [0001] directions for different size, different surface coverage and different mechanical strain. The results show that before the surface passivation, ZBNWs and WZNWs exhibit the metallic character and the semiconductor character, respectively. WZNWs show a crossover from a direct to an indirect as diameter decreases. After the surface passivation, both ZBNWs and WZNWs are found to be direct-gap character. The electronic band structure shows a significant response to changes in surface passivation with pseudo hydrogen and halogen. The band structure with mechanical strain is strongly dependent on the crystal orientation and the NW diameter. In ZBNWs, compressive strain induces the indirect band gap character, whereas tensile strain can not form it. WZNWs have various strain dependence in that both compressive and tensile strain make InSb show a direct band gap character. A brief analysis of these results is given. - Highlights: • InSb nanowires with different surfaces can show the different band structures. • Band gap magnitude of InSb nanowires depends on the suppression of surface states. • Different types of mechanical strains show the different effect on the band structure of the InSb nanowires.

Towards time-of-flight PET with a semiconductor detector

Science.gov (United States)

Ariño-Estrada, Gerard; Mitchell, Gregory S.; Kwon, Sun Il; Du, Junwei; Kim, Hadong; Cirignano, Leonard J.; Shah, Kanai S.; Cherry, Simon R.

2018-02-01

The feasibility of using Cerenkov light, generated by energetic electrons following 511 keV photon interactions in the semiconductor TlBr, to obtain fast timing information for positron emission tomography (PET) was evaluated. Due to its high refractive index, TlBr is a relatively good Cerenkov radiator and with its wide bandgap, has good optical transparency across most of the visible spectrum. Coupling an SiPM photodetector to a slab of TlBr (TlBr-SiPM) yielded a coincidence timing resolution of 620 ps FWHM between the TlBr-SiPM detector and a LFS reference detector. This value improved to 430 ps FWHM by applying a high pulse amplitude cut based on the TlBr-SiPM and reference detector signal amplitudes. These results are the best ever achieved with a semiconductor PET detector and already approach the performance required for time-of-flight. As TlBr has higher stopping power and better energy resolution than the conventional scintillation detectors currently used in PET scanners, a hybrid TlBr-SiPM detector with fast timing capability becomes an interesting option for further development.

The role of contacts in semiconductor gamma radiation detectors

International Nuclear Information System (INIS)

Lachish, U.

1998-01-01

It is proposed that the operation of semiconductor gamma radiation detectors, equipped with ohmic contacts, which allow free electron flow between the contacts and bulk material, will not be sensitive to low hole mobility, hole collection efficiency, or hole trapping. Such fast-operating detectors may be readily integrated into monolithic arrays. The detection mechanism and various material aspects are discussed and compared to those of blocking contact detectors. Some suggestions for detector realization are presented. (orig.)

Semiconductor detectors in current energy dispersive X-ray spectral analysis

Energy Technology Data Exchange (ETDEWEB)

Betin, J; Zhabin, E; Krampit, I; Smirnov, V

1980-04-01

A review is presented of the properties of semiconductor detectors and of the possibilities stemming therefrom of using the detectors in X-ray spectral analysis in industries, in logging, in ecology and environmental control, in medicine, etc.

Characterization of midwave infrared InSb avalanche photodiode

Energy Technology Data Exchange (ETDEWEB)

Abautret, J., E-mail: johan.abautret@ies.univ-montp2.fr; Evirgen, A. [Université Montpellier, IES, UMR 5214, F-34095 Montpellier (France); CNRS, IES, UMR 5214, F-34095 Montpellier (France); SOFRADIR, BP 21, 38113 Veurey-Voroize (France); Perez, J. P.; Christol, P. [Université Montpellier, IES, UMR 5214, F-34095 Montpellier (France); CNRS, IES, UMR 5214, F-34095 Montpellier (France); Rothman, J. [CEA-LETI, 17 rue des Martyrs, 38054 Grenoble Cedex 9 (France); Cordat, A. [SOFRADIR, BP 21, 38113 Veurey-Voroize (France)

2015-06-28

This paper focuses on the InSb material potential for the elaboration of Avalanche Photodiodes (APD) for high performance infrared imaging applications, both in passive or active mode. The first InSb electron-APD structure was grown by molecular beam epitaxy, processed and electrically characterized. The device performances are at the state of the art for the InSb epi-diode technology, with a dark current density J(−50 mV) = 32 nA/cm{sup 2} at 77 K. Then, a pure electron injection was performed, and an avalanche gain, increasing exponentially, was observed with a gain value near 3 at −4 V at 77 K. The Okuto–Crowell model was used to determine the electron ionization coefficient α(E) in InSb, and the InSb gain behavior is compared with the one of InAs and MCT APDs.

Development of radiation tolerant semiconductor detectors for the Super-LHC

CERN Document Server

Moll, M; Al-Ajili, A A; Alfieri, G; Allport, P P; Artuso, M; Assouak, S; Avset, B S; Barabash, L; Barcz, A; Bates, R; Biagi, S F; Bilei, G M; Bisello, D; Blue, A; Blumenau, A; Boisvert, V; Bölla, G; Bondarenko, G B; Borchi, E; Borrello, L; Bortoletto, D; Boscardin, M; Bosisio, L; Bowcock, T J V; Brodbeck, T J; Broz, J; Bruzzi, M; Brzozowski, A; Buda, M; Buhmann, P; Buttar, C; Campabadal, F; Campbell, D; Candelori, A; Casse, G; Cavallini, A; Charron, S; Chilingarov, A; Chren, D; Cindro, V; Collins, P; Coluccia, R; Contarato, D; Coutinho, J; Creanza, D; Cunningham, W; Betta, G F D; Dawson, I; de Boer, Wim; De Palma, M; Demina, R; Dervan, P; Dittongo, S; Dolezal, Z; Dolgolenko, A; Eberlein, T; Eremin, V; Fall, C; Fasolo, F; Fizzotti, F; Fleta, C; Focardi, E; Forton, E; Fretwurst, E; García, C; García-Navarro, J E; Gaubas, E; Genest, M H; Gill, K A; Giolo, K; Glaser, M; Gössling, C; Golovine, V; Sevilla, S G; Gorelov, I; Goss, J; Bates, A G; Grégoire, G; Gregori, P; Grigoriev, E; Grillo, A A; Groza, A; Guskov, J; Haddad, L; Härkönen, J; Hauler, F; Hoeferkamp, M; Honniger, F; Horazdovsky, T; Horisberger, Roland Paul; Horn, M; Houdayer, A; Hourahine, B; Hughes, G; Ilyashenko, Yu S; Irmscher, K; Ivanov, A; Jarasiunas, K; Johansen, K M H; Jones, B K; Jones, R; Joram, C; Jungermann, L; Kalinina, E; Kaminski, P; Karpenko, A; Karpov, A; Kazlauskiene, V; Kazukauskas, V; Khivrich, V; Khomenkov, V; Kierstead, J A; Klaiber Lodewigs, J; Klingenberg, R; Kodys, P; Kohout, Z; Korjenevski, S; Koski, M; Kozlowski, R; Kozodaev, M; Kramberger, G; Krasel, O; Kuznetsov, A; Kwan, S; Lagomarsino, S; Lassila-Perini, K M; Lastovetsky, V F; Latino, G; Lazanu, S; Lazanu, I; Lebedev, A; Lebel, C; Leinonen, K; Leroy, C; Li Z; Lindström, G; Linhart, V; Litovchenko, A P; Litovchenko, P G; Lo Giudice, A; Lozano, M; Luczynski, Z; Luukka, P; Macchiolo, A; Makarenko, L F; Mandic, I; Manfredotti, C; Manna, N; Garcia, S Mi; Marunko, S; Mathieson, K; Melone, J; Menichelli, D; Messineo, A; Metcalfe, J; Miglio, S; Mikuz, M; Miyamoto, J; Monakhov, E; Moscatelli, F; Naoumov, D; Nossarzhevska, E; Nysten, J; Olivero, P; OShea, V; Palviainen, T; Paolini, C; Parkes, C; Passeri, D; Pein, U; Pellegrini, G; Perera, L; Petasecca, M; Piemonte, C; Pignatel, G U; Pinho, N; Pintilie, I; Pintilie, L; Polivtsev, L; Polozov, P; Popa, A; Popule, J; Pospísil, S; Pozza, A; Radicci, V; Rafí, J M; Rando, R; Röder, R; Rohe, T; Ronchin, S; Rott, C; Roy, A; Ruzin, A; Sadrozinski, H F W; Sakalauskas, S; Scaringella, M; Schiavulli, L; Schnetzer, S; Schumm, B; Sciortino, S; Scorzoni, A; Segneri, G; Seidel, S; Seiden, A; Sellberg, G; Sellin, P J; Sentenac, D; Shipsey, I; Sícho, P; Sloan, T; Solar, M; Son, S; Sopko, B; Sopko, V; Spencer, N; Stahl, J; Stolze, D; Stone, R; Storasta, J; Strokan, N; Sudzius, M; Surma, B; Suvorov, A; Svensson, B G; Tipton, P; Tomasek, M; Tsvetkov, A; Tuominen, E; Tuovinen, E; Tuuva, T; Tylchin, M; Uebersee, H; Uher, J; Ullán, M; Vaitkus, J V; Velthuis, J; Verbitskaya, E; Vrba, V; Wagner, G; Wilhelm, I; Worm, S; Wright, V; Wunstorf, R; Yiuri, Y; Zabierowski, P; Zaluzhny, A; Zavrtanik, M; Zen, M; Zhukov, V; Zorzi, N

2005-01-01

The envisaged upgrade of the Large Hadron Collider (LHC) at CERN towards the Super-LHC (SLHC) with a 10 times increased luminosity of 10challenges for the tracking detectors of the SLHC experiments. Unprecedented high radiation levels and track densities and a reduced bunch crossing time in the order of 10ns as well as the need for cost effective detectors have called for an intensive R&D program. The CERN RD50 collaboration "Development of Radiation Hard Semiconductor Devices for Very High Luminosity Colliders" is working on the development of semiconductor sensors matching the requirements of the SLHC. Sensors based on defect engineered silicon like Czochralski, epitaxial and oxygen enriched silicon have been developed. With 3D, Semi-3D and thin detectors new detector concepts have been evaluated and a study on the use of standard and oxygen enriched p-type silicon detectors revealed a promising approach for radiation tolerant cost effective devices. These and other most recent advancements of the RD50 ...

Semiconductor detectors in current energy dispersive X-ray spectral analysis

International Nuclear Information System (INIS)

Betin, J.; Zhabin, E.; Krampit, I.; Smirnov, V.

1980-01-01

A review is presented of the properties of semiconductor detectors and of the possibilities stemming therefrom of using the detectors in X-ray spectral analysis in industries, in logging, in ecology and environmental control, in medicine, etc. (M.S.)

A spectrometer using semi-conductor detectors; study and applications (1963)

International Nuclear Information System (INIS)

Roux, G.

1963-01-01

The low average energy, 2.5 to 3.5 eV, required to produce one hole-electron pair in a semiconductor allows an accurate measurement of the energy of the ionizing particles. A high resolution spectrometer has been built using semiconductor detectors. The limit of resolution, due to electronics associated to the detector, to the detector itself and to the source of particles is studied here. The present practical limit of resolution of the spectrometer is 1700 elementary electric charges (full width at half maximum of a ray of a spectrum) or 6 keV in terms of energy lost by a particle in a silicon detector. The physical resolution usually obtained is 20 keV (0.33 per cent) with α particles of the 212 Bi (6.087 MeV). It depends a lot of the kind of detector used. Some results, concerning the background of the detectors and limit of measurements for low energies are given. Various applications are presented: spectrometry β, spectrometry γ and X, spectrometry of mixtures of α radioactive elements, collection of α spectra. (author) [fr

Properties of SiC semiconductor detector of fast neutrons investigated using MCNPX code

International Nuclear Information System (INIS)

Sedlakova, K.; Sagatova, A.; Necas, V.; Zatko, B.

2013-01-01

The potential of silicon carbide (SiC) for use in semiconductor nuclear radiation detectors has been long recognized. The wide bandgap of SiC (3.25 eV for 4H-SiC polytype) compared to that for more conventionally used semiconductors, such as silicon (1.12 eV) and germanium (0.67 eV), makes SiC an attractive semiconductor for use in high dose rate and high ionization nuclear environments. The present work focused on the simulation of particle transport in SiC detectors of fast neutrons using statistical analysis of Monte Carlo radiation transport code MCNPX. Its possibilities in detector design and optimization are presented.(authors)

Peltier battery thermostat for semiconductor detectors

International Nuclear Information System (INIS)

Caini, V.

1980-01-01

The description is given of a Peltier battery cooling thermostat for semiconductor detectors, whose sensing element is the detector itself. A signal proportional to the leakage current is amplified and compared with a chosen reference voltage. The difference, amplified and sensed, regulates the cooling current to the Peltier battery. Special mechanical devices speed up measurement-taking. The leakage current proved to be reducible to as little as 1/1000 of that at ambient temperature and the stabilization obtained is between +-5 nA (although between +-1 nA is also feasible). Hence it is possible to use very high load resistance preamplifiers to reduce noise and to improve stability and pulse height resolution in α spectroscopy, even with a detector unsuitable for work at very low temperatures. Other applications can be foreseen. (orig.)

Synchrotron radiation studies of inorganic-organic semiconductor interfaces

International Nuclear Information System (INIS)

Evans, D.A.; Steiner, H.J.; Vearey-Roberts, A.R.; Bushell, A.; Cabailh, G.; O'Brien, S.; Wells, J.W.; McGovern, I.T.; Dhanak, V.R.; Kampen, T.U.; Zahn, D.R.T.; Batchelor, D.

2003-01-01

Organic semiconductors (polymers and small molecules) are widely used in electronic and optoelectronic technologies. Many devices are based on multilayer structures where interfaces play a central role in device performance and where inorganic semiconductor models are inadequate. Synchrotron radiation techniques such as photoelectron spectroscopy (PES), near-edge X-ray absorption fine structure (NEXAFS) and X-ray standing wave spectroscopy (XSW) provide a powerful means of probing the structural, electronic and chemical properties of these interfaces. The surface-specificity of these techniques allows key properties to be monitored as the heterostructure is fabricated. This methodology has been directed at the growth of hybrid organic-inorganic semiconductor interfaces involving copper phthalocyanine as the model organic material and InSb and GaAs as the model inorganic semiconductor substrates. Core level PES has revealed that these interfaces are abrupt and chemically inert due to the weak bonding between the molecules and the inorganic semiconductor. NEXAFS studies have shown that there is a preferred orientation of the molecules within the organic semiconductor layers. The valence band offsets for the heterojunctions have been directly measured using valence level PES and were found to be very different for copper phthalocyanine on InSb and GaAs (0.7 and -0.3 eV respectively) although an interface dipole is present in both cases

Plasma Reflection in Multigrain Layers of Narrow-Bandgap Semiconductors

Science.gov (United States)

Zhukov, N. D.; Shishkin, M. I.; Rokakh, A. G.

2018-04-01

Qualitatively similar spectral characteristics of plasma-resonance reflection in the region of 15-25 μm were obtained for layers of electrodeposited submicron particles of InSb, InAs, and GaAs and plates of these semiconductors ground with M1-grade diamond powder. The most narrow-bandgap semiconductor InSb (intrinsic absorption edge ˜7 μm) is characterized by an absorption band at 2.1-2.3 μm, which is interpreted in terms of the model of optical excitation of electrons coupled by the Coulomb interaction. The spectra of a multigrain layer of chemically deposited PbS nanoparticles (50-70 nm) exhibited absorption maxima at 7, 10, and 17 μm, which can be explained by electron transitions obeying the energy-quantization rules for quantum dots.

Microelectronics used for Semiconductor Imaging Detectors

CERN Document Server

Heijne, Erik H M

2010-01-01

Semiconductor crystal technology, microelectronics developments and nuclear particle detection have been in a relation of symbiosis, all the way from the beginning. The increase of complexity in electronics chips can now be applied to obtain much more information on the incident nuclear radiation. Some basic technologies are described, in order to acquire insight in possibilities and limitations for the most recent detectors.

Study on effects of gamma-ray irradiation on TlBr semiconductor detectors

International Nuclear Information System (INIS)

Matsumura, Motohiro; Watanabe, Kenichi; Yamazaki, Atsushi; Uritani, Akira; Kimura, Norihisa; Nagano, Nobumichi; Hitomi, Keitaro

2016-01-01

Radiation hardness of thallium bromide (TlBr) semiconductor detectors to 60 Co gamma-ray irradiation was evaluated. The energy spectra and μτ products of electrons were measured to evaluate the irradiation effects. No significant degradation of spectroscopic performance of the TlBr detector for 137 Cs gamma-rays was observed up to 45 kGy irradiation. Although the μτ products of electrons in the TlBr detector slightly decreased, position of the photo-peak was stable without significant degradation after the gamma-ray irradiation. We confirmed that the TlBr semiconductor detector has a high tolerance for gamma-ray irradiation at least up to 45 kGy. (author)

Dual-sided microstructured semiconductor neutron detectors (DSMSNDs)

International Nuclear Information System (INIS)

Fronk, Ryan G.; Bellinger, Steven L.; Henson, Luke C.; Ochs, Taylor R.; Smith, Colten T.; Kenneth Shultis, J.; McGregor, Douglas S.

2015-01-01

Microstructured semiconductor neutron detectors (MSNDs) have in recent years received much interest as high-efficiency replacements for thin-film-coated thermal neutron detectors. The basic device structure of the MSND involves micro-sized trenches that are etched into a vertically-oriented pvn-junction diode that are backfilled with a neutron converting material. Neutrons absorbed within the converting material induce fission of the parent nucleus, producing a pair of energetic charged-particle reaction products that can be counted by the diode. The MSND deep-etched microstructures produce good neutron-absorption and reaction-product counting efficiencies, offering a 10× improvement in intrinsic thermal neutron detection efficiency over thin-film-coated devices. Performance of present-day MSNDs are nearing theoretical limits; streaming paths between the conversion-material backfilled trenches, allow a considerable fraction of neutrons to pass undetected through the device. Dual-sided microstructured semiconductor neutron detectors (DSMSNDs) have been developed that utilize a complementary second set of trenches on the back-side of the device to count streaming neutrons. DSMSND devices are theoretically capable of greater than 80% intrinsic thermal neutron detection efficiency for a 1-mm thick device. The first such prototype DSMSNDs, presented here, have achieved 29.48±0.29% nearly 2× better than MSNDs with similar microstructure dimensions.

X-ray imaging with photon counting hybrid semiconductor pixel detectors

CERN Document Server

Manolopoulos, S; Campbell, M; Snoeys, W; Heijne, Erik H M; Pernigotti, E; Raine, C; Smith, K; Watt, J; O'Shea, V; Ludwig, J; Schwarz, C

1999-01-01

Semiconductor pixel detectors, originally developed for particle physics experiments, have been studied as X-ray imaging devices. The performance of devices using the OMEGA 3 read-out chip bump-bonded to pixellated silicon semiconductor detectors is characterised in terms of their signal-to-noise ratio when exposed to 60 kVp X-rays. Although parts of the devices achieve values of this ratio compatible with the noise being photon statistics limited, this is not found to hold for the whole pixel matrix, resulting in the global signal-to-noise ratio being compromised. First results are presented of X-ray images taken with a gallium arsenide pixel detector bump-bonded to a new read-out chip, (MEDIPIX), which is a single photon counting read-out chip incorporating a 15-bit counter in every pixel. (author)

Charge collection efficiency in a semiconductor radiation detector with a non-constant electric field

International Nuclear Information System (INIS)

Shah, K.S.; Lund, J.C.; Olschner, F.

1990-01-01

The development of improved semiconductor radiation detectors would be facilitated by a quantitative model that predicts the performance of these detectors as a function of material characteristics and device operating parameters. An accurate prediction of the pulse height spectrum from a radiation detector can be made if both the noise and the charge collection properties of the detector are understood. The noise characteristics of semiconductor radiation detectors have been extensively studied. The effect of noise can be closely simulated by convoluting the noise-free pulse height spectrum with a Gaussian function. Distortion of semiconductor detector's pulse height spectrum from charge collection effects is more complex than the effects of noise and is more difficult to predict. To compute these distortions it is necessary to know how the charge collection efficiency η varies as a function of position within the detector x. These effects are shown. This problem has been previously solved for planar detectors with a constant electric field, for the case of spherical detectors, and for coaxial detectors. In this paper the authors describe a more general solution to the charge collection problem which includes the case of a non-constant electric field in a planar geometry

The semi-conductor detectors: art state, new concepts

International Nuclear Information System (INIS)

Pochet, T.

1993-01-01

After a brief recall of signal formation principle in a detector and of its different operation modes, the high Z materials as CdTe, HgI 2 , GaAs ,Ge and Si are presented, followed by the new 'thin layer' semiconductors

Spin-lattice relaxation times and knight shift in InSb and InAs

International Nuclear Information System (INIS)

Braun, P.; Grande, S.

1976-01-01

For a dominant contact interaction between nuclei and conduction electrons the relaxation rate is deduced. The extreme cases of degenerate and non-degenerate semiconductors are separately discussed. At strong degeneracy the product of the Knight shift and relaxation time gives the Korringa relation for metals. Measurements of the NMR spin-lattice relaxation times of 115 InSb and 115 InAs were made between 4.2 and 300 K for strongly degenerated samples. The different relaxation mechanisms are discussed and the experimental and theoretical results are compared. (author)

Unit Cell Structure of Crystal Polytypes in InAs and InSb Nanowires

DEFF Research Database (Denmark)

Kriegner, Dominik; Panse, Christian; Mandl, Bernhard

2011-01-01

The atomic distances in hexagonal polytypes of III−V compound semiconductors differ from the values expected from simply a change of the stacking sequence of (111) lattice planes. While these changes were difficult to quantify so far, we accurately determine the lattice parameters of zinc blende......, wurtzite, and 4H polytypes for InAs and InSb nanowires, using X-ray diffraction and transmission electron microscopy. The results are compared to density functional theory calculations. Experiment and theory show that the occurrence of hexagonal bilayers tends to stretch the distances of atomic layers...

Study on Characteristic of CdZnTe Semiconductor Detectors for Alpha Particle Measurement

International Nuclear Information System (INIS)

Kang, Sang Mook; Ha, Jang Ho; Kim, Yong Kyun; Park, Se Hwan; Kim, Han Soo; Chung, Chong Eun

2005-01-01

The last 2-3 years have seen continued effort in the development of a wide band gap room-temperature compound semiconductor devices aimed principally at photon imaging covering hard X-rays, synchrotrons, and low to medium energy gamma rays. Especially, among the semiconductor materials of a wide band gap, CdZnTe(CZT) has commonly used X-ray and gammaray detection applications because of the opportunity to achieve and excellent spectral and spatial resolution. It has recently been demonstrated that CZT can be used as an ancillary detector with the ability to detect both alpha particles and X-ray at room temperature. CZT detectors are relatively inexpensive compared with some silicon detectors, and are priced about the same as amorphous silicon and photodiodes which are routinely used for charged particle detection. In this paper, we investigated the use of the CZT semiconductor material as an alpha particles detector

Industrial workshop on LASL semiconductor radiation-detector research and development

International Nuclear Information System (INIS)

Endebrock, M.

1978-11-01

An Industrial Workshop on LASL Semiconductor Radiation Detector Research and Development was held at the Los Alamos Scientific Laboratory (LASL) in the spring of 1977. The purpose was to initiate communication between our detector research and development program and industry. LASL research programs were discussed with special emphasis on detector problems. Industrial needs and capabilities in detector research and development were also presented. Questions of technology transfer were addressed. The notes presented here are meant to be informal, as were the presentations

Stable room-temperature thallium bromide semiconductor radiation detectors

Science.gov (United States)

Datta, A.; Fiala, J.; Becla, P.; Motakef, Shariar

2017-10-01

Thallium bromide (TlBr) is a highly efficient ionic semiconductor with excellent radiation detection properties. However, at room temperature, TlBr devices polarize under an applied electric field. This phenomenon not only degrades the charge collection efficiency of the detectors but also promotes chemical reaction of the metal electrodes with bromine, resulting in an unstable electric field and premature failure of the device. This drawback has been crippling the TlBr semiconductor radiation detector technology over the past few decades. In this exhaustive study, this polarization phenomenon has been counteracted using innovative bias polarity switching schemes. Here the highly mobile Br- species, with an estimated electro-diffusion velocity of 10-8 cm/s, face opposing electro-migration forces during every polarity switch. This minimizes the device polarization and availability of Br- ions near the metal electrode. Our results indicate that it is possible to achieve longer device lifetimes spanning more than 17 000 h (five years of 8 × 7 operation) for planar and pixelated radiation detectors using this technique. On the other hand, at constant bias, 2500 h is the longest reported lifetime with most devices less than 1000 h. After testing several biasing switching schemes, it is concluded that the critical bias switching frequency at an applied bias of 1000 V/cm is about 17 μHz. Using this groundbreaking result, it will now be possible to deploy this highly efficient room temperature semiconductor material for field applications in homeland security, medical imaging, and physics research.

Stable room-temperature thallium bromide semiconductor radiation detectors

Directory of Open Access Journals (Sweden)

A. Datta

2017-10-01

Full Text Available Thallium bromide (TlBr is a highly efficient ionic semiconductor with excellent radiation detection properties. However, at room temperature, TlBr devices polarize under an applied electric field. This phenomenon not only degrades the charge collection efficiency of the detectors but also promotes chemical reaction of the metal electrodes with bromine, resulting in an unstable electric field and premature failure of the device. This drawback has been crippling the TlBr semiconductor radiation detector technology over the past few decades. In this exhaustive study, this polarization phenomenon has been counteracted using innovative bias polarity switching schemes. Here the highly mobile Br− species, with an estimated electro-diffusion velocity of 10−8 cm/s, face opposing electro-migration forces during every polarity switch. This minimizes the device polarization and availability of Br− ions near the metal electrode. Our results indicate that it is possible to achieve longer device lifetimes spanning more than 17 000 h (five years of 8 × 7 operation for planar and pixelated radiation detectors using this technique. On the other hand, at constant bias, 2500 h is the longest reported lifetime with most devices less than 1000 h. After testing several biasing switching schemes, it is concluded that the critical bias switching frequency at an applied bias of 1000 V/cm is about 17 μHz. Using this groundbreaking result, it will now be possible to deploy this highly efficient room temperature semiconductor material for field applications in homeland security, medical imaging, and physics research.

Atomic structure determination of InSb(100)c(4x4) and c(8x2)phases by X-ray photoelectron diffraction

International Nuclear Information System (INIS)

Carvalho, V.E. de; Soares, E.A.; Magalhaes, M.R.P.; Paniago, R.; Siervo, A. de; Landers, R.

2004-01-01

Full text: The (100) surfaces of III-V compound semiconductors exhibit a variety of surface reconstructions that have attracted a lot of attention because of their importance in both homo epitaxial and heteroepitaxial growth. In the special case of the narrow bandgap InSb compound semiconductor its potential application in high-speed electronic and optoelectronic devices has encourage many studies of its (100) surface atomic structure. Among the reconstructions presented by the InSb(100) surface two of them have received more attention, that is, the observed well-ordered In-rich c(8x2) and Sb terminated c(4x4) surfaces. The c(8x2) structure can be obtained by exposing the surface to low energy ion bombardment and annealing, whereas the c(4x4) structure involves the chemisorption of Sb onto an already Sb-terminated surface. These two structures have been studied mainly by scanning tunneling microscopy (STM) and surface X-ray diffraction (SXRD) techniques and all the proposed models are based on the occurrence of group III (and/or V) blocks of dimmers occupying sites on the top or at subsurface layer. However, there are still difficulties in determining either the exact number of atoms in each dimmer or the number of dimmers in each block. With the goal of getting a better structure determination of the InSb(100) surface phases a photoelectron diffraction experiment (XPD) was carried out at LNLS where synchrotron and Al-K α radiations have been used. In the present work, the experimental and preliminary results of structure determination for both In Sn(100)c(8x2) and InSb(100)c(4x4) phases will be presented and discussed. (author)

A semiconductor parameter analyzer for ionizing radiation detectors

International Nuclear Information System (INIS)

Santos, Luiz A.P.

2009-01-01

Electrometers and ion chamber are normally used to make several types of measurements in a radiation field and there is a unique voltage applied to each detector type. Some electronic devices that are built of semiconductor materials like silicon crystal can also be used for the same purpose. In this case, a characteristic curve of the device must be acquired to choose an operation point which consists of an electrical current or voltage to be applied to the device. Unlike ion chambers, such an electronic device can have different operation points depending on its current versus voltage curve (I x V). The best operation point of the device is also a function of the radiation, energy, dose rate and fluence. The purpose of this work is to show a semiconductor parameter analyzer built to acquire I x V curves as usually, and the innovation here is the fact that it can be used to obtain such a parametric curve when a quad-polar device is under irradiation. The results demonstrate that the system is a very important tool to scientists interested to evaluate a semiconductor detector before, during and after irradiation. A collection of results for devices under an X-ray beam and a neutron fluence are presented: photodiode, phototransistors, bipolar transistor and MOSFET. (author)

Dual-Energy Semiconductor Detector of X-rays and Gamma Radiation

Directory of Open Access Journals (Sweden)

Brodyn, M.S.

2014-03-01

Full Text Available Analysis of the major types of ionizing radiation detectors, their advantages and disadvantages are presented. Application of ZnSe-based semiconductor detector in high temperature environment is substantiated. Different forms of ZnSe-based detector samples and double-crystal scheme for registration of X- and gamma rays in a broad energy range were used . Based on the manufactured simulator device, the study sustains the feasibility of the gamma quanta recording by a high-resistance ZnSe-based detector operating in a perpulse mode.

Influence of backscattering on the spatial resolution of semiconductor X-ray detectors

International Nuclear Information System (INIS)

Hoheisel, M.; Korn, A.; Giersch, J.

2005-01-01

Pixelated X-ray detectors using semiconductor layers or scintillators as absorbers are widely used in high-energy physics, medical diagnosis, or non-destructive testing. Their good spatial resolution performance makes them particularly suitable for applications where fine details have to be resolved. Intrinsic limitations of the spatial resolution have been studied in previous simulations. These simulations focused on interactions inside the conversion layer. Transmitted photons were treated as a loss. In this work, we also implemented the structure behind the conversion layer to investigate the impact of backscattering inside the detector setup. We performed Monte Carlo simulations with the program ROSI (Roentgen Simulation) which is based on the well-established EGS4 algorithm. Line-spread functions of different fully implemented detectors were simulated. In order to characterize the detectors' spatial resolution, the modulation transfer functions (MTF) were calculated. The additional broadening of the line-spread function by carrier transport has been ignored in this work. We investigated two different detector types: a directly absorbing pixel detector where a semiconductor slab is bump-bonded to a readout ASIC such as the Medipix-2 setup with Si or GaAs as an absorbing semiconductor layer, and flat-panel detectors with a Se or a CsI converter. We found a significant degradation of the MTF compared to the case without backscattering. At energies above the K-edge of the backscattering material the spatial resolution drops and can account for the observed low-frequency drop of the MTF. Ignoring this backscatter effect might lead to misinterpretations of the charge sharing effect in counting pixel detectors

Room Temperature Hard Radiation Detectors Based on Solid State Compound Semiconductors: An Overview

Science.gov (United States)

Mirzaei, Ali; Huh, Jeung-Soo; Kim, Sang Sub; Kim, Hyoun Woo

2018-05-01

Si and Ge single crystals are the most common semiconductor radiation detectors. However, they need to work at cryogenic temperatures to decrease their noise levels. In contrast, compound semiconductors can be operated at room temperature due to their ability to grow compound materials with tunable densities, band gaps and atomic numbers. Highly efficient room temperature hard radiation detectors can be utilized in biomedical diagnostics, nuclear safety and homeland security applications. In this review, we discuss room temperature compound semiconductors. Since the field of radiation detection is broad and a discussion of all compound materials for radiation sensing is impossible, we discuss the most important materials for the detection of hard radiation with a focus on binary heavy metal semiconductors and ternary and quaternary chalcogenide compounds.

Room Temperature Hard Radiation Detectors Based on Solid State Compound Semiconductors: An Overview

Science.gov (United States)

Mirzaei, Ali; Huh, Jeung-Soo; Kim, Sang Sub; Kim, Hyoun Woo

2018-03-01

Si and Ge single crystals are the most common semiconductor radiation detectors. However, they need to work at cryogenic temperatures to decrease their noise levels. In contrast, compound semiconductors can be operated at room temperature due to their ability to grow compound materials with tunable densities, band gaps and atomic numbers. Highly efficient room temperature hard radiation detectors can be utilized in biomedical diagnostics, nuclear safety and homeland security applications. In this review, we discuss room temperature compound semiconductors. Since the field of radiation detection is broad and a discussion of all compound materials for radiation sensing is impossible, we discuss the most important materials for the detection of hard radiation with a focus on binary heavy metal semiconductors and ternary and quaternary chalcogenide compounds.

Energy response of neutron area monitor with silicon semiconductor detector

International Nuclear Information System (INIS)

Kitaguchi, Hiroshi; Izumi, Sigeru; Kobayashi, Kaoru; Kaihara, Akihisa; Nakamura, Takashi.

1993-01-01

A prototype neutron area monitor with a silicon semiconductor detector has been developed which has the energy response of 1 cm dose equivalent recommended by the ICRP-26. Boron and proton radiators are coated on the surface of the silicon semiconductor detector. The detector is set at the center of a cylindrical polyethylene moderator. This moderator is covered by a porous cadmium board which serves as the thermal neutron absorber. Neutrons are detected as α-particles generated by the nuclear reaction 10 B(n,α) 7 Li and as recoil protons generated by the interaction of fast neutrons with hydrogen. The neutron energy response of the monitor was measured using thermal neutrons and monoenergetic fast neutrons generated by an accelerator. The response was consistent with the 1 cm dose equivalent response required for the monitor within ±34% in the range of 0.025 - 15 Mev. (author)

Cryostat for an well logging probe using a semiconductor detector

International Nuclear Information System (INIS)

Tapphorn, R.M.

1978-01-01

This invention proposes to construct an well logging tool of the type comprising a semiconductor radiation detector devoid of the defects usually observed. This aim is attained by means of a cryostat to cool a semiconductor radiation detector in a restricted space where the temperature is high. It includes a long box dimensioned to pass through a bore hole, a cryogenic chamber housed in the box, a vacuum chamber thermally insulating the cryogenic chamber and placed around it, a semiconductor radiation detector housed in the vacuum chamber in thermal contact with the cryogenic chamber and an active vacuum pump fitted in the box and connected to the vacuum chamber to maintain a vacuum in it. In an improved version, the vacuum pump is fitted outside the cryostat so that it operates independently of the temperature conditions in the cryostat. If the pump needs to be cooled to reduce the gas discharge, it can be fitted inside the cryostat and connected to the cryogenic chamber or a second cryostat can also be provided to cool the pump. The vacuum pump is designed to maintain the vacuum in the thermal insulation vacuum chamber at a desired figure, preferably 10 -4 Torr or under, in order to preserve the integrity of the thermal insulation layer around the cryogenic chamber and thereby extending the efficient operating period of the detector. The cryogenic material used is preferably of fusion resistant type such as Freon 22 [fr

Investigation on the structural stability and electronic properties of InSb nanostructures – A DFT approach

Directory of Open Access Journals (Sweden)

V. Nagarajan

2014-06-01

Full Text Available The realistic InSb nanostructures namely InSb nanoring, InSb nanocube, InSb nanocube-18, InSb nanosheet, InSb nanocage and InSb nanocube-27 are simulated and optimized successfully using B3LYP/LanL2DZ basis set. The stability of InSb nanostructures is studied in terms of binding energy, vibrational studies and calculated energy. The electronic properties of InSb nanostructures are discussed using ionization potential, electron affinity and HOMO–LUMO gap. Point symmetry and dipole moment of InSb nanostructures are reported. Incorporation of impurity atom in InSb nanostructures is studied using embedding energy. The present study provides the information regarding the enhanced electronic properties of InSb nanostructure which finds its potential importance in microelectronics and optoelectronic devices.

Behavior of GaSb (100) and InSb (100) surfaces in the presence of H{sub 2}O{sub 2} in acidic and basic cleaning solutions

Energy Technology Data Exchange (ETDEWEB)

Seo, Dongwan; Na, Jihoon; Lee, Seunghyo; Lim, Sangwoo, E-mail: swlim@yonsei.ac.kr

2017-03-31

Highlights: • Surface behavior of GaSb and InSb was investigated in acidic and basic solutions. • H{sub 2}O{sub 2} plays a key role in the surface oxidation of GaSb and InSb in acidic hydrochloric acid/hydrogen peroxide mixture (HPM) solution. • GaSb and InSb surfaces were hardly oxidized in basic ammonium hydroxide/hydrogen peroxide mixture (APM) solution in the presence of H{sub 2}O{sub 2}. • The effect of dilution of APM solution on the oxidation of the InSb surface was minimal. • Surface characteristics of GaSb and InSb in HPM and APM solutions are mainly determined by the behaviors of the group III elements rather than the group V element. - Abstract: Gallium antimonide (GaSb) and indium antimonide (InSb) have attracted strong attention as new channel materials for transistors due to their excellent electrical properties and lattice matches with various group III–V compound semiconductors. In this study, the surface behavior of GaSb (100) and InSb (100) was investigated and compared in hydrochloric acid/hydrogen peroxide mixture (HPM) and ammonium hydroxide/hydrogen peroxide mixture (APM) solutions. In the acidic HPM solution, surface oxidation was greater and the etching rates of the GaSb and InSb surfaces increased when the solution is concentrated, which indicates that H{sub 2}O{sub 2} plays a key role in the surface oxidation of GaSb and InSb in acidic HPM solution. However, the GaSb and InSb surfaces were hardly oxidized in basic APM solution in the presence of H{sub 2}O{sub 2} because gallium and indium are in the thermodynamically stable forms of H{sub 2}GaO{sub 3}{sup −} and InO{sub 2}{sup −}, respectively. When the APM solution was diluted, however, the Ga on the GaSb surface was oxidized by H{sub 2}O, increasing the etching rate. However, the effect of dilution of the APM solution on the oxidation of the InSb surface was minimal; thus, the InSb surface was less oxidized than the GaSb surface and the change in the etching rate of InSb

Evaluation of scintillators and semiconductor detectors to image three-photon positron annihilation for positron emission tomography

International Nuclear Information System (INIS)

Abuelhia, E.; Spyrou, N.M.; Kacperski, K.; College University, Middlesex Hospital, London

2008-01-01

Positron emission tomography (PET) is rapidly becoming the main nuclear imaging modality of the present century. The future of PET instrumentation relies on semiconductor detectors because of their excellent characteristics. Three-photon positron annihilation has been recently investigated as a novel imaging modality, which demands the crucial high energy resolution of semiconductor detector. In this work the evaluation of the NaI(Tl) scintillator and HPGe and CdZTe semiconductor detectors, to construct a simple three-photon positron annihilation scanner has been explored. The effect of detector and scanner size on spatial resolution (FWHM) is discussed. The characteristics: energy resolution versus count rate and point-spread function of the three-photon positron annihilation image profile from triple coincidence measurements were investigated. (author)

Proposal for a semiconductor high resolution tracking detector

International Nuclear Information System (INIS)

Rehak, P.

1983-01-01

A 'new' concept for detection and tracking of charged particles in high energy physics experiments is proposed. It combines a well known high purity semiconductor diode detector (HPSDD) with a heterojunction structure (HJ) and a negative electron affinity (NEA) surface. The detector should be capable of providing a two dimensional view (few cm 2 ) of multi-track events with the following properties: a) position resolution down to a few μm (10 8 position elements); b) high density of information (10 2 -10 3 dots per mm of minimum ionizing track); c) high rate capabilities (few MHz); d) live operation with options to be triggered and/or the information from the detector can be used as an input for the decision to record an event. (orig.)

Non-streaming high-efficiency perforated semiconductor neutron detectors, methods of making same and measuring wand and detector modules utilizing same

Science.gov (United States)

McGregor, Douglas S.; Shultis, John K.; Rice, Blake B.; McNeil, Walter J.; Solomon, Clell J.; Patterson, Eric L.; Bellinger, Steven L.

2010-12-21

Non-streaming high-efficiency perforated semiconductor neutron detectors, method of making same and measuring wands and detector modules utilizing same are disclosed. The detectors have improved mechanical structure, flattened angular detector responses, and reduced leakage current. A plurality of such detectors can be assembled into imaging arrays, and can be used for neutron radiography, remote neutron sensing, cold neutron imaging, SNM monitoring, and various other applications.

Recent advancements in the development of radiation hard semiconductor detectors for S-LHC

CERN Document Server

Fretwurst, E; Al-Ajili, A A; Alfieri, G; Allport, P P; Artuso, M; Assouak, S; Avset, B S; Barabash, L; Barcz, A; Bates, R; Biagi, S F; Bilei, G M; Bisello, D; Blue, A; Blumenau, A; Boisvert, V; Bölla, G; Bondarenko, G B; Borchi, E; Borrello, L; Bortoletto, D; Boscardin, M; Bosisio, L; Bowcock, T J V; Brodbeck, T J; Broz, J; Bruzzi, M; Brzozowski, A; Buda, M; Buhmann, P; Buttar, C; Campabadal, F; Campbell, D; Candelori, A; Casse, G; Cavallini, A; Charron, S; Chilingarov, A G; Chren, D; Cindro, V; Collins, P; Coluccia, R; Contarato, D; Coutinho, J; Creanza, D; Cunningham, L; Dalla Betta, G F; Dawson, I; de Boer, Wim; De Palma, M; Demina, R; Dervan, P; Dittongo, S; Dolezal, Z; Dolgolenko, A; Eberlein, T; Eremin, V; Fall, C; Fasolo, F; Ferbel, T; Fizzotti, F; Fleta, C; Focardi, E; Forton, E; García, C; García-Navarro, J E; Gaubas, E; Genest, M H; Gill, K A; Giolo, K; Glaser, M; Gössling, C; Golovine, V; González-Sevilla, S; Gorelov,I; Goss, J; Gouldwell-Bates, A; Grégoire, G; Gregori, P; Grigoriev, E; Grillo, A A; Groza, A; Guskov, J; Haddad, L; Härkönen, J; Hauler, F; Hoeferkamp, M; Honniger, F; Horazdovsky, T; Horisberger, R P; Horn, M; Houdayer, A; Hourahine, B; Hughes, G; Ilyashenko, Yu S; Irmscher, K; Ivanov, A; Jarasiunas, K; Johansen, K M H; Jones, B K; Jones, R; Joram, C; Jungermann, L; Kalinina, E; Kaminski, P; Karpenko, A; Karpov, A; Kazlauskiene, V; Kazukauskas, V; Khivrich, V; Khomenkov, V P; Kierstead, J A; Klaiber Lodewigs, J M; Klingenberg, R; Kodys, P; Kohout, Z; Korjenevski, S; Koski, M; Kozlowski, R; Kozodaev, M; Kramberger, G; Krasel, O; Kuznetsov, A; Kwan, S; Lagomarsino, S; Lassila-Perini, K M; Lastovetsky, V F; Latino, G; Lazanu, I; Lazanu, S; Lebedev, A; Lebel, C; Leinonen, K; Leroy, C; Li, Z; Lindström, G; Linhart, V; Litovchenko, P G; Litovchenko, A P; Lo Giudice, A; Lozano, M; Luczynski, Z; Luukka, Panja; Macchiolo, A; Makarenko, L F; Mandic, I; Manfredotti, C; Manna, N; Martí i García, S; Marunko, S; Mathieson, K; Melone, J; Menichelli, D; Messineo, A; Metcalfe, J; Miglio, S; Mikuz, M; Miyamoto, J; Moll, M; Monakhov, E; Moscatelli, F; Naoumov, D; Nossarzhevska, E; Nysten, J; Olivero, P; O'Shea, V; Palviainen, T; Paolini, C; Parkes, C; Passeri, D; Pein, U; Pellegrini, G; Perera, L; Petasecca, M; Piemonte, C; Pignatel, G U; Pinho, N; Pintilie, I; Pintilie, L; Polivtsev, L; Polozov, P; Popa, A; Populea, J; Pospísil, S; Pozza, A; Radicci, V; Rafí, J M; Rando, R; Röder, R; Rohe, T; Ronchin, S; Rott, C; Roy, A; Ruzin, A; Sadrozinski, H F W; Sakalauskas, S; Scaringella, M; Schiavulli, L; Schnetzer, S; Schumm, B; Sciortino, S; Scorzoni, A; Segneri, G; Seidela, S; Seiden, A; Sellberg, G; Sellin, P J; Sentenac, D; Shipsey, I; Sícho, P; Sloan, T; Solar, M; Son, S; Sopko, B; Sopko, V; Spencer, N; Stahl, J; Stolze, D; Stone, R; Storasta, J; Strokan, N; Sudzius, M; Surma, B; Suvorov, A; Svensson, B G; Tipton, P; Tomasek, M; Tsvetkov, A; Tuominen, E; Tuovinen, E; Tuuva, T; Tylchin, M; Uebersee, H; Uher, J; Ullán, M; Vaitkus, J V; Velthuis, J; Verbitskaya, E; Vrba, V; Wagner, G; Wilhelm, I; Worm, S; Wright, V; Wunstorf, R; Yiuri, Y; Zabierowski, P; Zaluzhny, A; Zavrtanik, M; Zen, M; Zhukov, V; Zorzi, N

2005-01-01

The proposed luminosity upgrade of the Large Hadron Collider (S-LHC) at CERN will demand the innermost layers of the vertex detectors to sustain fluences of about 1016 hadrons/cm2. Due to the high multiplicity of tracks, the required spatial resolution and the extremely harsh radiation field new detector concepts and semiconductor materials have to be explored for a possible solution of this challenge. The CERN RD50 collaboration “Development of Radiation Hard Semiconductor Devices for Very High Luminosity Colliders” has started in 2002 an R&D program for the development of detector technologies that will fulfill the requirements of the S-LHC. Different strategies are followed by RD50 to improve the radiation tolerance. These include the development of defect engineered silicon like Czochralski, epitaxial and oxygen-enriched silicon and of other semiconductor materials like SiC and GaN as well as extensive studies of the microscopic defects responsible for the degradation of irradiated sensors. Furthe...

Recent advances in Tl Br, Cd Te and CdZnTe semiconductor radiation detectors: a review

International Nuclear Information System (INIS)

Oliveira, Icimone B.

2011-01-01

The success in the development of radiation spectrometers operating at room temperature is based on many years of effort on the part of large numbers of workers around the world. These individuals have contributed to the understanding of the fundamental materials issues associated with the growth of semiconductors for this application, the development of device fabrication and processing technology, and advances in low noise electronics and pulse processing. Progress in this field continues at an accelerated pace, as in evidenced by the improvements in detector performance and by the growing number of commercial products. Thus, the last years have been seen continued effort in the development of room temperature compound semiconductors devices. High-Z compound semiconductor detectors has been explored for high energy resolution, high detection efficiency and are of low cost. Compound semiconductors detectors are well suited for addressing needs of demanding applications such as bore hole logging where high operating temperature are encountered. In this work recent developments in semiconductors detectors were reviewed. This review concentrated on thallium bromide (TlBr), cadmium zinc telluride (CdZnTe) and cadmium telluride (CdTe) crystals detectors. TlBr has higher stopping power compared to common semiconductor materials because it has the higher photoelectric and total attenuation coefficients over wide energy range from 100 keV to 1 MeV. CdTe and CdZnTe detectors have several attractive features for detecting X-ray and low energy gamma ray. Their relatively large band gaps lead to a relatively low leakage current and offer an excellent energy resolution at room temperature. A literature survey and bibliography was also included. (author)

Recent advances in Tl Br, Cd Te and CdZnTe semiconductor radiation detectors: a review

Energy Technology Data Exchange (ETDEWEB)

Oliveira, Icimone B. [Universidade Bandeirante (UNIBAN), Sao Paulo, SP (Brazil)

2011-07-01

The success in the development of radiation spectrometers operating at room temperature is based on many years of effort on the part of large numbers of workers around the world. These individuals have contributed to the understanding of the fundamental materials issues associated with the growth of semiconductors for this application, the development of device fabrication and processing technology, and advances in low noise electronics and pulse processing. Progress in this field continues at an accelerated pace, as in evidenced by the improvements in detector performance and by the growing number of commercial products. Thus, the last years have been seen continued effort in the development of room temperature compound semiconductors devices. High-Z compound semiconductor detectors has been explored for high energy resolution, high detection efficiency and are of low cost. Compound semiconductors detectors are well suited for addressing needs of demanding applications such as bore hole logging where high operating temperature are encountered. In this work recent developments in semiconductors detectors were reviewed. This review concentrated on thallium bromide (TlBr), cadmium zinc telluride (CdZnTe) and cadmium telluride (CdTe) crystals detectors. TlBr has higher stopping power compared to common semiconductor materials because it has the higher photoelectric and total attenuation coefficients over wide energy range from 100 keV to 1 MeV. CdTe and CdZnTe detectors have several attractive features for detecting X-ray and low energy gamma ray. Their relatively large band gaps lead to a relatively low leakage current and offer an excellent energy resolution at room temperature. A literature survey and bibliography was also included. (author)

A spectrometer filter for semiconductor and scintillation detectors

International Nuclear Information System (INIS)

Andronov, O.I.; Brovchenko, V.G.; Evdokimov, S.T.

1995-01-01

The paper describes an integrating low-pass filter which takes signals from a delay line. The filter changes triangular pulses into rectangular ones. The energy resolution of a semiconductor detector whose signal is processed by the filter is 15-20% better than using a common RC-filter. The integrator stores a charge due to the scintillation pulse during the integration time without loss. The energy and time resolution of the device with the spectrometer filter is better than with an RC-filter. The energy resolution of a bismuth-germanate detector in recording radiation from 137 Cs is 9.75%

Current problems in semiconductor detectors for high energy physics after particle irradiations

International Nuclear Information System (INIS)

Lazanu, Ionel

2002-01-01

The use of semiconductor materials as detectors in high radiation environments, as expected in future high energy accelerators or in space missions, poses severe problems in long-time operations, due to changes in the properties of the material, and consequently in the performances of detectors. This talk presents the major theoretical areas of current problems, reviews the works in this field and the stage of their understanding, including author's contributions The mechanisms of interaction of the projectile with the semiconductor, the production of primary defects, the physical quantities and the equations able to characterise and describe the radiation effects, and the equations of kinetics of defects are considered. Correlation between microscopic damage and detector performances and the possible ways to optimise the radiation hardness of materials are discussed. (author)

MIS photodetectors on intrinsic semiconductors for thermal infrared imagery - A design aid for focal plane matrices

Science.gov (United States)

Farre, J.

1980-12-01

The physical mechanisms determining the operational behavior of an MIS photodetector for thermal infrared imagery based on a two-dimensional matrix of intrinsic semiconductors constituting a charge injection device are examined. The general principles of a thermal infrared imagery system composed of radiation source, atmosphere, sensor system with entrance optics, detector and environment, and data processing means are introduced, and the parameters of the system as a whole influencing detector characteristics are indicated. The properties of an ideal and a real MIS photodetector are discussed, with attention given to the physical properties of narrow bandgap materials such as InSb, operational properties in the dynamic regime, the carrier tunneling component and experimentally observed instability phenomena. The matrix organization of MIS photodetectors is then considered, with particular attention given to a simple model of charge transfer between two electrodes and the two principal reading mechanisms: charge injection and the floating potential method.

Beat-wave generation of plasmons in semiconductor plasmas

International Nuclear Information System (INIS)

Berezhiani, V.I.; Mahajan, S.M.

1995-08-01

It is shown that in semiconductor plasmas, it is possible to generate large amplitude plasma waves by the beating of two laser beams with frequency difference close to the plasma frequency. For narrow gap seimconductors (for example n-type InSb), the system can simulate the physics underlying beat wave generation in relativistic gaseous plasmas

Prototype of the stacked CdZnTe semiconductor detector for 16N measurement

International Nuclear Information System (INIS)

Nishizawa, Hiroshi; Inujima, Hiroshi; Fujiwara, Hirotsugu; Nakamura, Hiroaki

2001-01-01

Prototype of the Stacked CdZnTe Semiconductor Detector for Measurement The prototype model of the stacked CdZnTe semiconductor detector, which is able to measure the 6.13 MeV γ-ray from 16 N, was fabricated. The prototype's response calculation was carried out by Monte-Carlo method. The result of the response calculation agreed with the experiment data of check sources of 137 Cs and 60 Co, and 16 N which was measured at vicinity of the primary cooling water pipe of the nuclear reactor. The source spectra were unfolded with detector's response function obtained by simulation, and it is indicated that the incident γ-ray energy and its intensity ratio was identified and that the energy of 6 MeV γ-ray could be measured by the prototype of the stacked detector. (author)

Study and realization of a far infrared radiation detector

International Nuclear Information System (INIS)

Pereira, Daniel

1985-01-01

A F.I.R. dadiation detector (lambda = 337 μm) which makes use of the hot electron photoconductivity in InSb is described. The InSb crystal is cut in a special shape which allows high resistance (-7 KΩ) at liquid helium temperature without a magnetic field. In this way the detector can be used in the optimum point of the noise figure with a ultra-low noise pre-amplifier. A study is done to determine the sensitivity and the NEP (optical and electrical) which results respectively in 70 V/W and 10 -10 WHz sup(-1/2) for optical parameters. (Author) [pt

Third harmonic generation of high power far infrared radiation in semiconductors

Energy Technology Data Exchange (ETDEWEB)

Urban, M [Ecole Polytechnique Federale, Lausanne (Switzerland). Centre de Recherche en Physique des Plasma (CRPP)

1996-04-01

We investigated the third harmonic generation of high power infrared radiation in doped semiconductors with emphasis on the conversion efficiency. The third harmonic generation effect is based on the nonlinear response of the conduction band electrons in the semiconductor with respect to the electric field of the incident electromagnetic wave. Because this work is directed towards a proposed application in fusion plasma diagnostics, the experimental requirements for the radiation source at the fundamental frequency are roughly given as follows: a wavelength of the radiation at the fundamental frequency in the order of 1 mm and an incident power greater than 1 MW. The most important experiments of this work were performed using the high power far infrared laser of the CRPP. With this laser a new laser line was discovered, which fits exactly the source specifications given above: the wavelength is 676 {mu}m and the maximum power is up to 2 MW. Additional experiments were carried out using a 496 {mu}m laser and a 140 GHz (2.1 mm) gyrotron. The main experimental progress with respect to previous work in this field is, in addition to the use of a very high power laser, the possibility of an absolute calibration of the detectors for the far infrared radiation and the availability of a new type of detector with a very fast response. This detector made it possible to measure the power at the fundamental as well as the third harmonic frequency with full temporal resolution of the fluctuations during the laser pulse. Therefore the power dependence of the third harmonic generation efficiency could be measured directly. The materials investigated were InSb as an example of a narrow gap semiconductor and Si as standard material. The main results are: narrow gap semiconductors indeed have a highly nonlinear electronic response, but the narrow band gap leads at the same time to a low power threshold for internal breakdown, which is due to impact ionization. figs., tabs., refs.

Third harmonic generation of high power far infrared radiation in semiconductors

International Nuclear Information System (INIS)

Urban, M.

1996-04-01

In this work we investigated the third harmonic generation of high power infrared radiation in doped semiconductors with emphasis on the conversion efficiency. The third harmonic generation effect is based on the nonlinear response of the conduction band electrons in the semiconductor with respect to the electric field of the incident electromagnetic wave. Because this work is directed towards a proposed application in fusion plasma diagnostics, the experimental requirements for the radiation source at the fundamental frequency are roughly given as follows: a wavelength of the radiation at the fundamental frequency in the order of 1 mm and an incident power greater than 1 MW. The most important experiments of this work were performed using the high power far infrared laser of the CRPP. With this laser a new laser line was discovered, which fits exactly the source specifications given above: the wavelength is 676 μm and the maximum power is up to 2 MW. Additional experiments were carried out using a 496 μm laser and a 140 GHz (2.1 mm) gyrotron. The main experimental progress with respect to previous work in this field is, in addition to the use of a very high power laser, the possibility of an absolute calibration of the detectors for the far infrared radiation and the availability of a new type of detector with a very fast response. This detector made it possible to measure the power at the fundamental as well as the third harmonic frequency with full temporal resolution of the fluctuations during the laser pulse. Therefore the power dependence of the third harmonic generation efficiency could be measured directly. The materials investigated were InSb as an example of a narrow gap semiconductor and Si as standard material. The main results are: narrow gap semiconductors indeed have a highly nonlinear electronic response, but the narrow band gap leads at the same time to a low power threshold for internal breakdown, which is due to impact ionization. (author) figs

Grain boundary engineering with nano-scale InSb producing high performance InxCeyCo4Sb12+z skutterudite thermoelectrics

Directory of Open Access Journals (Sweden)

Han Li

2017-12-01

Full Text Available Thermoelectric semiconductors based on CoSb3 hold the best promise for recovering industrial or automotive waste heat because of their high efficiency and relatively abundant, lead-free constituent elements. However, higher efficiency is needed before thermoelectrics reach economic viability for widespread use. In this study, n-type InxCeyCo4Sb12+z skutterudites with high thermoelectric performance are produced by combining several phonon scattering mechanisms in a panoscopic synthesis. Using melt spinning followed by spark plasma sintering (MS-SPS, bulk InxCeyCo4Sb12+z alloys are formed with grain boundaries decorated with nano-phase of InSb. The skutterudite matrix has grains on a scale of 100–200 nm and the InSb nano-phase with a typical size of 5–15 nm is evenly dispersed at the grain boundaries of the skutterudite matrix. Coupled with the presence of defects on the Sb sublattice, this multi-scale nanometer structure is exceptionally effective in scattering phonons and, therefore, InxCeyCo4Sb12/InSb nano-composites have very low lattice thermal conductivity and high zT values reaching in excess of 1.5 at 800 K.

Present status and future trends of semiconductor detectors

International Nuclear Information System (INIS)

Lakatos, Tamas

1988-01-01

Some examples of the applications of semiconductor radiation detectors are briefly outlined, in order to illustrate development trends. The major parameters including energy resolution and dead time are discussed, and their improvement by the application of temporally varying parameter filters is pointed out. Development trends point toward low-loss signal processing by using adaptive filtering, possibly digital filtering. (R.P.) 14 refs.; 3 figs

MCNPX calculations for electron irradiated semiconductor detectors

International Nuclear Information System (INIS)

Sedlackova, K.; Necas, V.; Sagatova, A.; Zatko, B.

2014-01-01

This study aimed to treat some practical problems of (not only) semiconductor material irradiation by high energy electron beam using MCNPX simulation code. The relation between the absorbed dose and the fluency was found and the energy distribution of electron flux density was simulated on the top and back side of 270 μm thick GaAs, SiC and Si detectors. Furthermore, the dose depth profiles were calculated for GaAs, SiC and Si materials irradiated by 4 and 5 MeV electron beams. For the GaAs detector, a very good agreement with the experiment was shown. To match the absolute values of the absorbed dose with experimentally obtained values, the electron source emissivity has to be determined in relation to the electron beam setting parameters. (authors)

An investigation of performance characteristics of a pixellated room-temperature semiconductor detector for medical imaging

Energy Technology Data Exchange (ETDEWEB)

Guerra, P; Santos, A [Centro de Investigacion Biomedica de Bioningenieria, Biomateriales y Nanomedicina, CEEI-Modulo 3, C/ Maria de Luna, 11, 50018 Zaragoza (United States); Darambara, D G, E-mail: pguerra@ciber-bbn.e [Joint Department of Physics, Royal Marsden NHS Foundation Trust and Institute of Cancer Research, Fulham Road, London SW3 6JJ (United Kingdom)

2009-09-07

The operation of any semiconductor detector depends on the movement of the charge carriers, which are created within the material when radiation passes through, as a result of energy deposition. The carrier movement in the bulk semiconductor induces charges on the metal electrodes, and therefore a current on the electrodes and the external circuit. The induced charge strongly depends on the material transport parameters as well as the geometrical dimensions of a pixellated semiconductor detector. This work focuses on the performance optimization in terms of energy resolution, detection efficiency and intrinsic spatial resolution of a room-temperature semiconductor pixellated detector based on CdTe/CdZnTe. It analyses and inter-relates these performance figures for various dimensions of CdTe and CdZnTe detectors and for an energy range spanning from x-ray (25 keV) to PET (511 keV) imaging. Monte Carlo simulations, which integrate a detailed and accurate noise model, are carried out to investigate several CdTe/CdZnTe configurations and to determine possible design specifications. Under the considered conditions, the simulations demonstrate the superiority of the CdZnTe over the CdTe in terms of energy resolution and sensitivity in the photopeak. Further, according to the results, the spatial resolution is maximized at high energies and the energy resolution at low energies, while a reasonable detection efficiency is achieved at high energies, with a 1 x 1 x 6 mm{sup 3} CdZnTe pixellated detector.

An investigation of performance characteristics of a pixellated room-temperature semiconductor detector for medical imaging

International Nuclear Information System (INIS)

Guerra, P; Santos, A; Darambara, D G

2009-01-01

The operation of any semiconductor detector depends on the movement of the charge carriers, which are created within the material when radiation passes through, as a result of energy deposition. The carrier movement in the bulk semiconductor induces charges on the metal electrodes, and therefore a current on the electrodes and the external circuit. The induced charge strongly depends on the material transport parameters as well as the geometrical dimensions of a pixellated semiconductor detector. This work focuses on the performance optimization in terms of energy resolution, detection efficiency and intrinsic spatial resolution of a room-temperature semiconductor pixellated detector based on CdTe/CdZnTe. It analyses and inter-relates these performance figures for various dimensions of CdTe and CdZnTe detectors and for an energy range spanning from x-ray (25 keV) to PET (511 keV) imaging. Monte Carlo simulations, which integrate a detailed and accurate noise model, are carried out to investigate several CdTe/CdZnTe configurations and to determine possible design specifications. Under the considered conditions, the simulations demonstrate the superiority of the CdZnTe over the CdTe in terms of energy resolution and sensitivity in the photopeak. Further, according to the results, the spatial resolution is maximized at high energies and the energy resolution at low energies, while a reasonable detection efficiency is achieved at high energies, with a 1 x 1 x 6 mm 3 CdZnTe pixellated detector.

Application of imitation for energy calibration of silicon semiconductor detectors

CERN Document Server

Aivazyan, G M; Mikaelyan, M A

2003-01-01

An effective method is described for energy calibration of semiconductor detectors (SCD) with different thickness. The method is based on imitating the charge on the input of the preamplifier deposited in SCD by known energy ionizing particles, the imitation being performed by a pulser with a partial with use of alpha-active sources. The results of laboratory studies of the described method are given with detectors of either large, 50-1000 mu m, or small, 18-20 mu m, thickness

Application of imitation for energy calibration of silicon semiconductor detectors

International Nuclear Information System (INIS)

Aivazyan, G.M.; Badalyan, H.V.; Mikaelyan, M.A.

2003-01-01

An effective method is described for energy calibration of semiconductor detectors (SCD) with different thickness. The method is based on imitating the charge on the input of the preamplifier deposited in SCD by known energy ionizing particles, the imitation being performed by a pulser with a partial with use of α-active sources. The results of laboratory studies of the described method are given with detectors of either large, 50-1000μm, or small, 18-20 μm, thickness

Nanosecond X-ray detector based on high resistivity ZnO single crystal semiconductor

Energy Technology Data Exchange (ETDEWEB)

Zhao, Xiaolong; He, Yongning, E-mail: yongning@mail.xjtu.edu.cn; Peng, Wenbo; Huang, Zhiyong; Qi, Xiaomeng; Pan, Zijian; Zhang, Wenting [School of Electronic and Information Engineering, Xi' an Jiaotong University, Xi' an 710049 (China); Chen, Liang; Liu, Jinliang; Zhang, Zhongbing; Ouyang, Xiaoping [Radiation Detection Research Center, Northwest Institute of Nuclear Technology, Xi' an 710024 (China)

2016-04-25

The pulse radiation detectors are sorely needed in the fields of nuclear reaction monitoring, material analysis, astronomy study, spacecraft navigation, and space communication. In this work, we demonstrate a nanosecond X-ray detector based on ZnO single crystal semiconductor, which emerges as a promising compound-semiconductor radiation detection material for its high radiation tolerance and advanced large-size bulk crystal growth technique. The resistivity of the ZnO single crystal is as high as 10{sup 13} Ω cm due to the compensation of the donor defects (V{sub O}) and acceptor defects (V{sub Zn} and O{sub i}) after high temperature annealing in oxygen. The photoconductive X-ray detector was fabricated using the high resistivity ZnO single crystal. The rise time and fall time of the detector to a 10 ps pulse electron beam are 0.8 ns and 3.3 ns, respectively, indicating great potential for ultrafast X-ray detection applications.

Semiconductor tracker final integration and commissioning in the ATLAS detector

International Nuclear Information System (INIS)

Robichaud-Veronneau, Andree

2008-01-01

The SemiConductor Tracker (SCT) is part of the Inner Detector of the ATLAS experiment at the LHC. It is located between the Pixel detector and the Transition Radiation Tracker (TRT). During 2006 and 2007, the SCT was installed in its final position inside the ATLAS detector. The SCT barrel was lowered in 2006 and was tested for connectivity and noise. Common tests with the TRT to look for pick-up noise and grounding issues were also performed. The SCT end-caps were installed during summer 2007 and will undergo similar checks. The results from the various tests done before and after installation will be presented here.

The use of GaSe semiconductor detectors for monitoring high energy muon beams

CERN Document Server

Mancini, A M; Murri, R; Quirini, A; Rizzo, A; Vasanelli, L

1976-01-01

GaSe semiconductor detectors have been successfully tested during one year for monitoring muon beams in the GeV range in the neutrino experiment at CERN. Their performances are comparable with those of commercial Si surface barrier detectors for this particular application. Crystal growth, detector fabrication and characterization are briefly described. Various advantages (cost, ruggedness, resistance to radiation damage, manufacturing simplicity, etc.) are discussed. (8 refs).

Monte Carlo simulations of the particle transport in semiconductor detectors of fast neutrons

International Nuclear Information System (INIS)

Sedlačková, Katarína; Zaťko, Bohumír; Šagátová, Andrea; Nečas, Vladimír

2013-01-01

Several Monte Carlo all-particle transport codes are under active development around the world. In this paper we focused on the capabilities of the MCNPX code (Monte Carlo N-Particle eXtended) to follow the particle transport in semiconductor detector of fast neutrons. Semiconductor detector based on semi-insulating GaAs was the object of our investigation. As converter material capable to produce charged particles from the (n, p) interaction, a high-density polyethylene (HDPE) was employed. As the source of fast neutrons, the 239 Pu–Be neutron source was used in the model. The simulations were performed using the MCNPX code which makes possible to track not only neutrons but also recoiled protons at all interesting energies. Hence, the MCNPX code enables seamless particle transport and no other computer program is needed to process the particle transport. The determination of the optimal thickness of the conversion layer and the minimum thickness of the active region of semiconductor detector as well as the energy spectra simulation were the principal goals of the computer modeling. Theoretical detector responses showed that the best detection efficiency can be achieved for 500 μm thick HDPE converter layer. The minimum detector active region thickness has been estimated to be about 400 μm. -- Highlights: ► Application of the MCNPX code for fast neutron detector design is demonstrated. ► Simulations of the particle transport through conversion film of HDPE are presented. ► Simulations of the particle transport through detector active region are presented. ► The optimal thickness of the HDPE conversion film has been calculated. ► Detection efficiency of 0.135% was reached for 500 μm thick HDPE conversion film

Magneto-optical properties of InSb for terahertz applications

Directory of Open Access Journals (Sweden)

Jan Chochol

2016-11-01

Full Text Available Magneto-optical permittivity tensor spectra of undoped InSb, n-doped and p-doped InSb crystals were determined using the terahertz time-domain spectroscopy (THz-TDS and the Fourier transform far-infrared spectroscopy (far-FTIR. A Huge polar magneto-optical (MO Kerr-effect (up to 20 degrees in rotation and a simultaneous plasmonic behavior observed at low magnetic field (0.4 T and room temperature are promising for terahertz nonreciprocal applications. We demonstrate the possibility of adjusting the the spectral rage with huge MO by increase in n-doping of InSb. Spectral response is modeled using generalized magneto-optical Drude-Lorentz theory, giving us precise values of free carrier mobility, density and effective mass consistent with electric Hall effect measurement.

Exploring graphene field effect transistor devices to improve spectral resolution of semiconductor radiation detectors

Energy Technology Data Exchange (ETDEWEB)

Harrison, Richard Karl [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Howell, Stephen Wayne [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Martin, Jeffrey B. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Hamilton, Allister B. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

2013-12-01

Graphene, a planar, atomically thin form of carbon, has unique electrical and material properties that could enable new high performance semiconductor devices. Graphene could be of specific interest in the development of room-temperature, high-resolution semiconductor radiation spectrometers. Incorporating graphene into a field-effect transistor architecture could provide an extremely high sensitivity readout mechanism for sensing charge carriers in a semiconductor detector, thus enabling the fabrication of a sensitive radiation sensor. In addition, the field effect transistor architecture allows us to sense only a single charge carrier type, such as electrons. This is an advantage for room-temperature semiconductor radiation detectors, which often suffer from significant hole trapping. Here we report on initial efforts towards device fabrication and proof-of-concept testing. This work investigates the use of graphene transferred onto silicon and silicon carbide, and the response of these fabricated graphene field effect transistor devices to stimuli such as light and alpha radiation.

Advanced radiation detector development: Advanced semiconductor detector development: Development of a oom-temperature, gamma ray detector using gallium arsenide to develop an electrode detector

International Nuclear Information System (INIS)

Knoll, G.F.

1995-11-01

The advanced detector development project at the University of Michigan has completed the first full year of its current funding. Our general goals are the development of radiation detectors and spectrometers that are capable of portable room temperature operation. Over the past 12 months, we have worked primarily in the development of semiconductor spectrometers with open-quotes single carrierclose quotes response that offer the promise of room temperature operation and good energy resolution in gamma ray spectroscopy. We have also begun a small scale effort at investigating the properties of a small non-spectroscopic detector system with directional characteristics that will allow identification of the approximate direction in which gamma rays are incident. These activities have made use of the extensive clean room facilities at the University of Michigan for semiconductor device fabrication, and also the radiation measurement capabilities provided in our laboratory in the Phoenix Building on the North Campus. In addition to our laboratory based activities, Professor Knoll has also been a participant in several Department of Energy review activities held in the Forrestal Building and at the Germantown site. The most recent of these has been service on a DOE review panel chaired by Dr. Hap Lamonds that is reviewing the detector development programs supported through the Office of Arms Control and International Security

The simulation of charge sharing in semiconductor X-ray pixel detectors

CERN Document Server

Mathieson, K; O'Shea, V; Passmore, M S; Rahman, M; Smith, K M; Watt, J; Whitehill, C

2002-01-01

Two simulation packages were used to model the sharing of charge, due to the scattering and diffusion of carriers, between adjacent pixel elements in semiconductors X-ray detectors. The X-ray interaction and the consequent multiple scattering was modelled with the aid of the Monte Carlo package, MCNP. The resultant deposited charge distribution was then used to create the charge cloud profile in the finite element semiconductor simulation code MEDICI. The analysis of the current pulses induced on pixel electrodes for varying photon energies was performed for a GaAs pixel detector. For a pixel pitch of 25 mu m, the charge lost to a neighbouring pixel was observed to be constant, at 0.6%, through the energies simulated. Ultimately, a fundamental limit on the pixel element size for imaging and spectroscopic devices may be set due to these key physical principles.

Ab initio calculation of the thermodynamic properties of InSb under intense laser irradiation

International Nuclear Information System (INIS)

Feng, ShiQuan; Cheng, XinLu; Zhao, JianLing; Zhang, Hong

2013-01-01

In this paper, phonon spectra of InSb at different electronic temperatures are presented. Based on the phonon dispersion relationship, we further perform a theoretical investigation of the thermodynamic properties of InSb under intense laser irradiation. The phonon entropy, phonon heat capacity, and phonon contribution to Helmholtz free energy and internal energy of InSb are calculated as functions of temperature at different electronic temperatures. The abrupt change in the phonon entropy- temperature curve from T e = 0.75 to 1.0 eV provides an indication of InSb undergoing a phase transition from solid to liquid. It can be considered as a collateral evidence of non-thermal melting for InSb under intense electronic excitation effect

Ab initio calculation of the thermodynamic properties of InSb under intense laser irradiation

Science.gov (United States)

Feng, ShiQuan; Zhao, JianLing; Cheng, XinLu; Zhang, Hong

2013-07-01

In this paper, phonon spectra of InSb at different electronic temperatures are presented. Based on the phonon dispersion relationship, we further perform a theoretical investigation of the thermodynamic properties of InSb under intense laser irradiation. The phonon entropy, phonon heat capacity, and phonon contribution to Helmholtz free energy and internal energy of InSb are calculated as functions of temperature at different electronic temperatures. The abrupt change in the phonon entropy- temperature curve from Te = 0.75 to 1.0 eV provides an indication of InSb undergoing a phase transition from solid to liquid. It can be considered as a collateral evidence of non-thermal melting for InSb under intense electronic excitation effect.

Photon detector composed of metal and semiconductor nanoparticles

International Nuclear Information System (INIS)

Takahashi, Atsuo; Minoura, Norihiko; Karube, Isao

2005-01-01

Applying the function of the single electron transistor, a novel photon detector consisting of a self-assembled structure of metal and semiconductor nanoparticles and an organic insulating layer was developed. It showed coulomb blockade behavior under dark conditions and remarkable increase in current corresponding to light intensity under light irradiation. Ultraweak photon emission of about 600 counts per second in the ultraviolet region could be detected at room temperature by this photon counter

Semiconductor devices as track detectors in high energy colliding beam experiments

International Nuclear Information System (INIS)

Ludlam, T.

1980-01-01

In considering the design of experiments for high energy colliding beam facilities one quickly sees the need for better detectors. The full exploitation of machines like ISABELLE will call for detector capabilities beyond what can be expected from refinements of the conventional approaches to particle detection in high energy physics experiments. Over the past year or so there has been a general realization that semiconductor device technology offers the possibility of position sensing detectors having resolution elements with dimensions of the order of 10 microns or smaller. Such a detector could offer enormous advantages in the design of experiments, and the purpose of this paper is to discuss some of the possibilities and some of the problems

Semiconductor devices as track detectors in high energy colliding beam experiments

Energy Technology Data Exchange (ETDEWEB)

Ludlam, T

1980-01-01

In considering the design of experiments for high energy colliding beam facilities one quickly sees the need for better detectors. The full exploitation of machines like ISABELLE will call for detector capabilities beyond what can be expected from refinements of the conventional approaches to particle detection in high energy physics experiments. Over the past year or so there has been a general realization that semiconductor device technology offers the possibility of position sensing detectors having resolution elements with dimensions of the order of 10 microns or smaller. Such a detector could offer enormous advantages in the design of experiments, and the purpose of this paper is to discuss some of the possibilities and some of the problems.

Controlling the emission wavelength in group III-V semiconductor laser diodes

KAUST Repository

Ooi, Boon S.

2016-12-29

Methods are provided for modifying the emission wavelength of a semiconductor quantum well laser diode, e.g. by blue shifting the emission wavelength. The methods can be applied to a variety of semiconductor quantum well laser diodes, e.g. group III-V semiconductor quantum wells. The group III-V semiconductor can include AlSb, AlAs, Aln, AlP, BN, GaSb, GaAs, GaN, GaP, InSb, InAs, InN, and InP, and group III-V ternary semiconductors alloys such as AlxGai.xAs. The methods can results in a blue shifting of about 20 meV to 350 meV, which can be used for example to make group III-V semiconductor quantum well laser diodes with an emission that is orange or yellow. Methods of making semiconductor quantum well laser diodes and semiconductor quantum well laser diodes made therefrom are also provided.

Effect of sulfur passivation of InSb (0 0 1) substrates on molecular-beam homoepitaxy

Energy Technology Data Exchange (ETDEWEB)

Solov’ev, V.A., E-mail: vasol@beam.ioffe.ru; Sedova, I.V.; Lvova, T.V.; Lebedev, M.V.; Dement’ev, P.A.; Sitnikova, A.A.; Semenov, A.N.; Ivanov, S.V.

2015-11-30

Highlights: • Treatment of InSb (0 0 1) substrate with 1 M aqueous Na{sub 2}S solution results in nearly complete removal of native oxides. • A sulfide protective layer formed by the S-treatment is desorbed at much lower temperatures than the native oxide layer. • The bulk InSb epilayers grown on the S-treated substrates have very smooth surface (RMS ∼0.1 nm). • Good structural quality of the homointerfaces formed at the S-treated substrates is confirmed by TEM. - Abstract: The aqueous sodium sulfide solution has been used for pre-epitaxial preparation of epi-ready InSb (0 0 1) substrates for molecular beam epitaxy (MBE) of InSb layers. X-ray photoemission spectroscopy study shows that the S-treated surface of InSb (0 0 1) substrate generally does not contain a native oxide layer and is covered with a sulfide protecting overlayer. Atomic-force microscopy and transmission electron microscopy have been applied to compare surface topography and structural properties of InSb layers grown by MBE on S-treated and untreated epi-ready InSb (0 0 1) substrates. The MBE growth of InSb layers with very smooth surface possessing the root-mean-square roughness as low as 0.1 nm and good structural quality has been demonstrated on the S-treated substrates.

Influence of energy bands on the Hall effect in degenerate semiconductors

International Nuclear Information System (INIS)

Wu, Chhi-Chong; Tsai, Jensan

1989-01-01

The influence of energy bands on the Hall effect and transverse magnetoresistance has been investigated according to the scattering processes of carriers in degenerate semiconductors such as InSb. Results show that the Hall angle, Hall coefficient, and transverse magnetoresistance depend on the dc magnetic field for both parabolic and nonparabolic band structures of semiconductors and also depend on the scattering processes of carriers in semiconductors due to the energy-dependent relaxation time. From their numerical analysis for the Hall effect, it is shown that the conduction electrons in degenerate semiconductors play a major role for the carrier transport phenomenon. By comparing with experimental data of the transverse magnetoresistance, it shows that the nonparabolic band model is better in agreement with the experimental work than the parabolic band model of semiconductors

Digital approach to high-resolution pulse processing for semiconductor detectors

International Nuclear Information System (INIS)

Georgiev, A.; Buchner, A.; Gast, W.; Lieder, R.M.

1992-01-01

A new design philosophy for processing signals produced by high resolution, large volume semiconductor detectors is described. These detectors, to be used in the next generation of spectrometer arrays for nuclear research (i.e. EUROBALL, etc.), present a set of problems like resolution degradation due to charge trapping and ballistic defect effects, low resolution at a high count rate, poor long term stability, etc. To solve these problems, a new design approach has been developed, including reconstruction of the event charge, providing a pure triangular residual function, and suppressing low frequency noise. 5 refs., 4 figs

Digital approach to high-resolution pulse processing for semiconductor detectors

Energy Technology Data Exchange (ETDEWEB)

Georgiev, A [Sofia Univ. (Bulgaria); Buchner, A [Forschungszentrum Rossendorf (Germany); Gast, W; Lieder, R M [Forschungszentrum Juelich GmbH (Germany). Inst. fuer Kernphysik; Stein, J [Target System Electronic GmbH, Solingen, (Germany)

1992-08-01

A new design philosophy for processing signals produced by high resolution, large volume semiconductor detectors is described. These detectors, to be used in the next generation of spectrometer arrays for nuclear research (i.e. EUROBALL, etc.), present a set of problems like resolution degradation due to charge trapping and ballistic defect effects, low resolution at a high count rate, poor long term stability, etc. To solve these problems, a new design approach has been developed, including reconstruction of the event charge, providing a pure triangular residual function, and suppressing low frequency noise. 5 refs., 4 figs.

Alpha-ray spectrometry at high temperature by using a compound semiconductor detector.

Science.gov (United States)

Ha, Jang Ho; Kim, Han Soo

2013-11-01

The use of conventional radiation detectors in harsh environments is limited by radiation damage to detector materials and by temperature constraints. We fabricated a wide-band gap semiconductor radiation detector based on silicon carbide. All the detector components were considered for an application in a high temperature environment like a nuclear reactor core. The radiation response, especially to alpha particles, was measured using an (241)Am source at variable operating voltages at room temperature in the air. The temperature on detector was controlled from 30°C to 250°C. The alpha-particle spectra were measured at zero bias operation. Even though the detector is operated at high temperature, the energy resolution as a function of temperature is almost constant within 3.5% deviation. Copyright © 2013 Elsevier Ltd. All rights reserved.

A novel method for simultaneous observations of plasma ion and electron temperatures using a semiconductor-detector array

International Nuclear Information System (INIS)

Cho, T.; Numakura, T.; Kohagura, J.; Hirata, M.; Minami, R.; Watanabe, H.; Sasuga, T.; Nishizawa, Y.; Yoshida, M.; Nagashima, S.; Nakashima, Y.; Ogura, K.; Tamano, T.; Yatsu, K.; Miyoshi, S.

2002-01-01

A new method for a simultaneous observation of both plasma ion and electron temperatures is proposed using one semiconductor-detector array alone. This method will provide a new application of semiconductor-detector arrays for monitoring the key parameter set of nuclear-fusion triple product (i.e., ion temperatures, densities, and confinement time) as well as for clarifying physics mechanisms of energy transport between plasma ions and electrons under various plasma confining conditions. This method is developed on the basis of an alternative 'positive' use of a semiconductor 'dead layer'; that is, an SiO 2 layer is employed as a reliable ultra-thin energy analysis filter for low-energy charge-exchanged neutral particles from plasmas ranging in ion temperatures from 0.1 to several tens of kilo-electron-volts. Using recent fabrication techniques for the thin and uniform SiO 2 layers of the order of tens to hundreds of angstrom, our computer simulation and its experimental verification show the availability of such semiconductors for distinguishing neutral particles (for ion temperatures) from X-rays (for electron temperatures). These are simultaneously emitted from the plasmas into semiconductor detectors; however, we employ their quite different penetration lengths and the resultant different deposition depths and profiles in semiconductor materials. As a result, their output signals are distinguishable for these two different and fundamental species of plasmas

Investigations on commercial semiconductor diodes as possible high dose rate radiation detectors

International Nuclear Information System (INIS)

Breitenhuber, L.; Kindl, P.; Obenaus, B.

1992-12-01

Investigations concerning the relevant properties of commercial semiconductor diodes such as their sensitivity and its dependence on accumulated dose, dose rate, energy, temperature and direction have been made in order to obtain their usefullness as radiation detectors. (authors)

Investigation of efficient termination structure for improved breakdown properties of semiconductor radiation detectors

International Nuclear Information System (INIS)

Krizaj, D.; Resnik, D.; Vrtacnik, D.; Amon, S.

1998-01-01

Efficiency of a new junction termination structure for improvement of breakdown properties of semiconductor radiation detectors is investigated. The structure consists of a diffused resistor winding around the active junction in a spiral fashion. The current flow through the spiral enables controlled potential distribution along the spiral turns and thus controlled depletion spreading from the main junction, efficiently preventing premature avalanche breakdown. Both multiple guard-ring structures and spiral junction termination structures have shown good breakdown properties typically three to five times higher than breakdown voltages of diodes without junction termination. The breakdown voltages of spiral junction termination structures are only weakly influenced by changes in substrate doping concentration caused by neutron irradiation. They can thus be considered for termination of future semiconductor radiation detectors

Development of large area silicon semiconductor detectors for use in the current mode

CERN Document Server

Ouyang Xia Opin; Li Zhen Fu; Zhang Guo Guang; Zhang Qi; Zhang Xia; Song Xian Cai; Jia Huan Yi; Lei Jian Hua; Sun Yuan Cheng

2002-01-01

Large area silicon semiconductor detectors for use in the current mode, with their dimensions of phi 40, phi 50 and phi 60 mm, their depletion thickness of 200-300 mu m, have been developed. Their performance measurements have been made, which indicate that the developed detectors can satisfactorily meet the needs in expectation. Compared with the detectors commercially available on the market, authors' large PIN detectors can serve both as reliable and efficient high-resolution devices for nuclear counting experiments, as well as monitors of high-intensity radiation fields in the current mode under a bias of 100-1000 V, while the detectors commercially available are only for the counting use

Ballistic superconductivity in semiconductor nanowires

Science.gov (United States)

Zhang, Hao; Gül, Önder; Conesa-Boj, Sonia; Nowak, Michał P.; Wimmer, Michael; Zuo, Kun; Mourik, Vincent; de Vries, Folkert K.; van Veen, Jasper; de Moor, Michiel W. A.; Bommer, Jouri D. S.; van Woerkom, David J.; Car, Diana; Plissard, Sébastien R; Bakkers, Erik P.A.M.; Quintero-Pérez, Marina; Cassidy, Maja C.; Koelling, Sebastian; Goswami, Srijit; Watanabe, Kenji; Taniguchi, Takashi; Kouwenhoven, Leo P.

2017-01-01

Semiconductor nanowires have opened new research avenues in quantum transport owing to their confined geometry and electrostatic tunability. They have offered an exceptional testbed for superconductivity, leading to the realization of hybrid systems combining the macroscopic quantum properties of superconductors with the possibility to control charges down to a single electron. These advances brought semiconductor nanowires to the forefront of efforts to realize topological superconductivity and Majorana modes. A prime challenge to benefit from the topological properties of Majoranas is to reduce the disorder in hybrid nanowire devices. Here we show ballistic superconductivity in InSb semiconductor nanowires. Our structural and chemical analyses demonstrate a high-quality interface between the nanowire and a NbTiN superconductor that enables ballistic transport. This is manifested by a quantized conductance for normal carriers, a strongly enhanced conductance for Andreev-reflecting carriers, and an induced hard gap with a significantly reduced density of states. These results pave the way for disorder-free Majorana devices. PMID:28681843

Temperature dependent lattice constant of InSb above room temperature

Science.gov (United States)

Breivik, Magnus; Nilsen, Tron Arne; Fimland, Bjørn-Ove

2013-10-01

Using temperature dependent X-ray diffraction on two InSb single crystalline substrates, the bulk lattice constant of InSb was determined between 32 and 325 °C. A polynomial function was fitted to the data: a(T)=6.4791+3.28×10-5×T+1.02×10-8×T2 Å (T in °C), which gives slightly higher values than previously published (which go up to 62 °C). From the fit, the thermal expansion of InSb was calculated to be α(T)=5.062×10-6+3.15×10-9×T K-1 (T in °C). We found that the thermal expansion coefficient is higher than previously published values above 100 °C (more than 10% higher at 325 °C).

Detection of secondary electrons with pixelated hybrid semiconductor detectors

International Nuclear Information System (INIS)

Gebert, Ulrike Sonja

2011-01-01

Within the scope of this thesis, secondary electrons were detected with a pixelated semiconductor detector named Timepix. The Timepix detector consists of electronics and a sensor made from a semiconductor material. The connection of sensor and electronics is done for each pixel individually using bump bonds. Electrons with energies above 3 keV can be detected with the sensor. One electron produces a certain amount of electron-hole pairs according to its energy. The charge then drifts along an electric field to the pixel electronics, where it induces an electric signal. Even without a sensor it is possible to detect an electric signal from approximately 1000 electrons directly in the pixel electronics. Two different detector systems to detect secondary electrons using the Timepix detector were investigated during this thesis. First of all, a hybrid photon detector (HPD) was used to detect single photoelectrons. The HPD consists of a vacuum vessel with an entrance window and a cesium iodine photocathode at the inner surface of the window. Photoelectrons are released from the photocathode by incident light and are accelerated in an electric field towards the Timepix detector, where the point of interaction and the arrival time of the electron is determined. With a proximity focusing setup, a time resolution of 12 ns (with an acceleration voltage of 20 kV between photocathode and Timepix detector) was obtained. The HPD examined in this thesis showed a strong dependence of the dark rate form the acceleration voltage and the pressure in the vacuum vessel. At a pressure of few 10 -5 mbar and an acceleration voltage of 20 kV, the dark rate was about 800 Hz per mm 2 area of the read out photocathode. One possibility to reduce the dark rate is to identify ion feedback events. With a slightly modified setup it was possible to reduce the dark rate to 0.5 Hz/mm 2 . To achieve this, a new photocathode was mounted in a shorter distance to the detector. The measurements where

Palladium silicide - a new contact for semiconductor radiation detectors

International Nuclear Information System (INIS)

Totterdell, D.H.J.

1981-11-01

Silicide layers can be used as low resistance contacts in semiconductor devices. The formation of a metal rich palladium silicide Pd 2 Si is discussed. A palladium film 100A thick is deposited at 300 0 C and the resulting silicide layer used as an ohmic contact in an n + p silicon detector. This rugged contact has electrical characteristics comparable with existing evaporated gold contacts and enables the use of more reproducible bonding techniques. (author)

Treatment verification and in vivo dosimetry for total body irradiation using thermoluminescent and semiconductor detectors

International Nuclear Information System (INIS)

Oliveira, F.F.; Amaral, L.L.; Costa, A.M.; Netto, T.G.

2014-01-01

The objective of this work is the characterization of thermoluminescent and semiconductor detectors and their applications in treatment verification and in vivo dosimetry for total body irradiation (TBI) technique. Dose measurements of TBI treatment simulation performed with thermoluminescent detectors inserted in the holes of a “Rando anthropomorphic phantom” showed agreement with the prescribed dose. For regions of the upper and lower chest where thermoluminescent detectors received higher doses it was recommended the use of compensating dose in clinic. The results of in vivo entrance dose measurements for three patients are presented. The maximum percentual deviation between the measurements and the prescribed dose was 3.6%, which is consistent with the action level recommended by the International Commission on Radiation Units and Measurements (ICRU), i.e., ±5%. The present work to test the applicability of a thermoluminescent dosimetric system and of a semiconductor dosimetric system for performing treatment verification and in vivo dose measurements in TBI techniques demonstrated the value of these methods and the applicability as a part of a quality assurance program in TBI treatments. - Highlights: • Characterization of a semiconductor dosimetric system. • Characterization of a thermoluminescent dosimetric system. • Application of the TLDs for treatment verification in total body irradiation treatments. • Application of semiconductor detectors for in vivo dosimetry in total body irradiation treatments. • Implementation of in vivo dosimetry as a part of a quality assurance program in radiotherapy

Determining dose rate with a semiconductor detector - Monte Carlo calculations of the detector response

Energy Technology Data Exchange (ETDEWEB)

Nordenfors, C

1999-02-01

To determine dose rate in a gamma radiation field, based on measurements with a semiconductor detector, it is necessary to know how the detector effects the field. This work aims to describe this effect with Monte Carlo simulations and calculations, that is to identify the detector response function. This is done for a germanium gamma detector. The detector is normally used in the in-situ measurements that is carried out regularly at the department. After the response function is determined it is used to reconstruct a spectrum from an in-situ measurement, a so called unfolding. This is done to be able to calculate fluence rate and dose rate directly from a measured (and unfolded) spectrum. The Monte Carlo code used in this work is EGS4 developed mainly at Stanford Linear Accelerator Center. It is a widely used code package to simulate particle transport. The results of this work indicates that the method could be used as-is since the accuracy of this method compares to other methods already in use to measure dose rate. Bearing in mind that this method provides the nuclide specific dose it is useful, in radiation protection, since knowing what the relations between different nuclides are and how they change is very important when estimating the risks

Position sensitive detector with semiconductor and image electron tube comprising such a detector

International Nuclear Information System (INIS)

Roziere, Guy.

1977-01-01

This invention concerns a position sensitive detector comprising a semiconducting substrate. It also concerns the electron tubes in which the detector may be incorporated in order to obtain an image formed at the tube input by an incident flux of particles or radiation. When a charged particle or group of such particles, electrons in particular, enter the space charge region of an inversely biased semiconductor diode, the energy supplied by these particles releases in the diode a certain number of electron-hole pairs which move in the field existing in the area towards the diode contacts. A corresponding current arises in the connections of this diode which constitutes the signal corresponding to the incident energy. Such a tube or chain of tubes is employed in nuclear medicine for observing parts of the human body, particularly by gamma radiation [fr

Evaluation of a 32 x 32 InSb CCD for use in astronomy

Science.gov (United States)

Forrest, W. J.; Pipher, J. L.

1983-01-01

We have been fortunate to receive several infrared CCD array detectors on loan from Santa Barbara Research Center. The devices are evaluation samples, not commercially available at this time. Dr. Alan Hoffman of SBRC has made the arrangements for this loan and provided considerable technical support to this project. One aim of this project has been to evaluate the performance potential of this array technology, using astronomical objects. A quick summary of our findings is given. In short, we have found the imaging properties to be excellent under both low and high background conditions and the sensitivity to be quite good (each pixel is competitive with current InSb single-detector systems in use for astronomy). We anticipate improved low-background performance when we run these detectors at a lower and more stable temperature. The device characteristics are described, laboratory testing is summarized, and the first astronomical imaging is presented. Various circuits developed (clocks, clock drivers, DC supplies, clamp-amplifier, and a real time display system) are given.

CDZNTE ROOM-TEMPERATURE SEMICONDUCTOR GAMMA-RAY DETECTOR FOR NATIONAL-SECURITY APPLICATIONS.

Energy Technology Data Exchange (ETDEWEB)

CAMARDA,G.S.; BOLOTNIKOV, A.E.; CUI, Y.; HOSSAIN, A.; KOHMAN, K.T.; JAMES, R.B.

2007-05-04

One important mission of the Department of Energy's National Nuclear Security Administration is to develop reliable gamma-ray detectors to meet the widespread needs of users for effective techniques to detect and identify special nuclear- and radioactive-materials. Accordingly, the Nonproliferation and National Security Department at Brookhaven National Laboratory was tasked to evaluate existing technology and to develop improved room-temperature detectors based on semiconductors, such as CdZnTe (CZT). Our research covers two important areas: Improving the quality of CZT material, and exploring new CZT-based gamma-ray detectors. In this paper, we report on our recent findings from the material characterization and tests of actual CZT devices fabricated in our laboratory and from materials/detectors supplied by different commercial vendors. In particular, we emphasize the critical role of secondary phases in the current CZT material and issues in fabricating the CZT detectors, both of which affect their performance.

On load resistor noise in preamplifiers for semiconductor detectors

International Nuclear Information System (INIS)

Baldin, S.A.; Bajramashvili, I.A.; Gubin, S.F.

1975-01-01

The main causes resulting in the deterioration of energy resolution in preamplifiers for semiconductor detectors (scd) with a resistor in the feedback circuit are discussed. A comparison of noise characteristics has been carried out of a number of high-resistance commercial and experimental resistors. The resistor noise dependence on the nature of drop of the resistor impedance active part in the region up to 100 Kc, as well as on the resistor spurious capacitance in shown

Ultra-high carrier mobility InSb film by rapid thermal annealing on glass substrate

Directory of Open Access Journals (Sweden)

Charith Jayanada Koswaththage

2016-11-01

Full Text Available InSb films were deposited on both mica and glass substrates using thermal evaporation and subjected to FA or RTA. Crystallinity, composition and electrical properties were investigated. High Hall electron mobility as high as 25,000 cm2/(Vs was obtained with the capped InSb film by keeping the In:Sb ratio after RTA at 520°C for 30 sec or more without adopting epitaxial growth on glass.

Flux distribution by neutrons semi-conductors detectors during the startup of the EL4 reactor

International Nuclear Information System (INIS)

Fuster, S.; Tarabella, A.

1967-01-01

The Cea developed neutron semi-conductors detectors which allows a quasi-instantaneous monitoring of neutrons flux distribution, when placed in a reactor during the tests. These detectors have been experimented in the EL4 reactor. The experiment and the results are presented and compared with reference mappings. (A.L.B.)

Induced radioactivity in the forward shielding and semiconductor tracker of the ATLAS detector.

Science.gov (United States)

Bĕdajánek, I; Linhart, V; Stekl, I; Pospísil, S; Kolros, A; Kovalenko, V

2005-01-01

The radioactivity induced in the forward shielding, copper collimator and semiconductor tracker modules of the ATLAS detector has been studied. The ATLAS detector is a long-term experiment which, during operation, will require to have service and access to all of its parts and components. The radioactivity induced in the forward shielding was calculated by Monte Carlo methods based on GEANT3 software tool. The results show that the equivalent dose rates on the outer surface of the forward shielding are very low (at most 0.038 microSv h(-1)). On the other hand, the equivalent dose rates are significantly higher on the inner surface of the forward shielding (up to 661 microSv h(-1)) and, especially, at the copper collimator close to the beampipe (up to 60 mSv h(-1)). The radioactivity induced in the semiconductor tracker modules was studied experimentally. The module was activated by neutrons in a training nuclear reactor and the delayed gamma ray spectra were measured. From these measurements, the equivalent dose rate on the surface of the semiconductor tracker module was estimated to be LHC) operation and 10 d of cooling.

Assessment of present and future large-scale semiconductor detector systems

International Nuclear Information System (INIS)

Spieler, H.G.; Haller, E.E.

1984-11-01

The performance of large-scale semiconductor detector systems is assessed with respect to their theoretical potential and to the practical limitations imposed by processing techniques, readout electronics and radiation damage. In addition to devices which detect reaction products directly, the analysis includes photodetectors for scintillator arrays. Beyond present technology we also examine currently evolving structures and techniques which show potential for producing practical devices in the foreseeable future

Majorana zero modes in superconductor-semiconductor heterostructures

Science.gov (United States)

Lutchyn, R. M.; Bakkers, E. P. A. M.; Kouwenhoven, L. P.; Krogstrup, P.; Marcus, C. M.; Oreg, Y.

2018-05-01

Realizing topological superconductivity and Majorana zero modes in the laboratory is a major goal in condensed-matter physics. In this Review, we survey the current status of this rapidly developing field, focusing on proposals for the realization of topological superconductivity in semiconductor-superconductor heterostructures. We examine materials science progress in growing InAs and InSb semiconductor nanowires and characterizing these systems. We then discuss the observation of robust signatures of Majorana zero modes in recent experiments, paying particular attention to zero-bias tunnelling conduction measurements and Coulomb blockade experiments. We also outline several next-generation experiments probing exotic properties of Majorana zero modes, including fusion rules and non-Abelian exchange statistics. Finally, we discuss prospects for implementing Majorana-based topological quantum computation.

Experimental investigation of energy resolution in a semiconductor detector (surface barrier and Si (Li) detector) in the detection of protons

International Nuclear Information System (INIS)

Nordborg, C.

1974-05-01

The action of electronic effects on the energy resolution of the detector is investigated. The results are applicable not only to protons but also to heavier charged particles. It should be possible to reach a resolution of about 6 to 7 keV for 10 MeV protons with electronic detectors. Magnetic spectrometers could achieve a resolution of 2 to 3 keV. It is convenient to use Peltier elements for cooling semiconductor spectrometers. (Auth.)

Search for strongly interacting massive particles using semiconductor detectors on the ground

International Nuclear Information System (INIS)

Derbin, A.V.; Egorov, A.I.; Bakhlanov, S.V.; Muratova, V.N.

1999-01-01

Using signals from recoil nucleus in semiconductor detectors, search for strongly interacting massive particles, as a possible candidate for dark matter, is continued. Experimental installation and the experimental results are given. New limits on the possible masses and cross sections of strongly interacting massive particles are presented [ru

Semiconductor Pixel detectors and their applications in life sciences

International Nuclear Information System (INIS)

Jakubek, J

2009-01-01

Recent advances in semiconductor technology allow construction of highly efficient and low noise pixel detectors of ionizing radiation. Steadily improving quality of front end electronics enables fast digital signal processing in each pixel which offers recording of more complete information about each detected quantum (energy, time, number of particles). All these features improve an extend applicability of pixel technology in different fields. Some applications of this technology especially for imaging in life sciences will be shown (energy and phase sensitive X-ray radiography and tomography, radiography with heavy charged particles, neutron radiography, etc). On the other hand a number of obstacles can limit the detector performance if not handled. The pixel detector is in fact an array of individual detectors (pixels), each of them has its own efficiency, energy calibration and also noise. The common effort is to make all these parameters uniform for all pixels. However an ideal uniformity can be never reached. Moreover, it is often seen that the signal in one pixel can affect the neighbouring pixels due to various reasons (e.g. charge sharing). All such effects have to be taken into account during data processing to avoid false data interpretation. A brief view into the future of pixel detectors and their applications including also spectroscopy, tracking and dosimetry is given too. Special attention is paid to the problem of detector segmentation in context of the charge sharing effect.

Formation of the InAs-, InSb-, GaAs-, and GaSb-polished surface

Science.gov (United States)

Levchenko, Iryna; Tomashyk, Vasyl; Stratiychuk, Iryna; Malanych, Galyna; Korchovyi, Andrii; Kryvyi, Serhii; Kolomys, Oleksandr

2018-04-01

The features of the InAs, InSb, GaAs, and GaSb ultra-smooth surface have been investigated using chemical-mechanical polishing with the (NH4)2Cr2O7-HBr-CH2(OH)CH2(OH)-etching solutions. The etching rate of the semiconductors has been measured as a function of the solution saturation by organic solvent (ethylene glycol). It was found that mechanical effect significantly increases the etching rate from 1.5 to 57 µm/min, and the increase of the organic solvent concentration promotes the decrease of the damaged layer-removing rate. According to AFM, RS, HRXRD results, the treatment with the (NH4)2Cr2O7-HBr-ethylene glycol solutions produces the clean surface of the nanosize level (R a < 0.5 nm).

Diamagnetic (cyclotron) resonance in semiconductors using strong magnetic fields

Energy Technology Data Exchange (ETDEWEB)

Sosniak, J

1962-07-01

Diamagnetic (cyclotron) resonance experiments have been carried out in the semiconductors indium-antimonide (InSb), the indium-arsenide (InAs). Pulsed magnetic fields up to 300,000 gauss and monochromatic infrared radiation of 9 to 13.5 microns wavelength were used to measure the effective mass of the conduction electrons in those materials. The samples were n-type single crystals, with a room temperature electron concentration of 1.9 x 10{sup 16} and 6 x 10{sup 16} per cm{sup 3} in InSb and InAs respectively. Both the InSb and InAs samples showed a strong dependence of the effective mass on the magnetic field. The results show that the conduction bands in those solids are highly non-parabolic. Measurements were also made of the resonance absorption coefficients, which were found to be considerably smaller than the values obtained from simple theory. The effect is explained by assuming that the magnetic field reduces the intrinsic electron density, and that the absorption coefficient depends on the shape of the conduction band. It is postulated as a consequence that the relaxation time of diamagnetic energy levels at high magnetic fields does not differ appreciably from the relaxation time used in the description of conduction processes. (author)

The use of portable semiconductor detectors in nuclear medicine

International Nuclear Information System (INIS)

Kuhn, W.

1986-01-01

A new biotelemetric system, CdTe semiconductor detectors with portable hard memory, for the registration of time activity curves in particular body regions of patients is introduced. The hard- and software connection of the system to the already present EDV configuration is described. The characteristics of the detectors are studied, theoretically explained and compared to the information given by the producers. By means of the determination of the ortho-iodine hippuric acid clearance (OIH) from the registration of the time activity curves in the chest the first information about the practicability in clinical use as well as the validity of the method are deduced. The detector system proved itself to be susceptible to problems, especially from manipulation of the cable or from movement of the patient. The determination of the OIH clearance from the partial body curve was problematic, because an extrapolation to the whole body based on the specific OIH kinetic in the small, observed tissue section is difficult. The comparison with the camera picture should be carefully evaluated, because this method has in principle the same inadequacies. (orig./HP) [de

Property of a CZT semiconductor detector for radionuclide identification

International Nuclear Information System (INIS)

Chun, Sung-Dae; Park, Se-Hwan; Ha, Jang Ho; Kang, Sang Mook; Lee, Dong Hoon; Kim, Yong Kyun; Cho, Yun Ho; Kim, Jong Kyung; Hong, Duk-Geun

2008-01-01

Compound semiconductors of high Z value material have been studied intensively for X-ray and γ-ray spectroscopy at room temperature. CdZnTe has wide band gap energy as 1.6 eV and can provide high quantum efficiency with reasonably good energy resolution at room temperature. This study is aimed at determining radionuclide analysis ability by measuring energy resolution of CZT detector which will be applied at nuclear material identification purpose. For experiment we used a CZT detector (5 x 5 x 5 mm 3 ) which is manufactured by eV Products. We have performed our measurement at varied temperatures similar to the outdoor environment for the investigation about temperature dependence of energy resolution and peak centroid fluctuation of CZT detector by using gas cooling and Peltier cooling methods. In order to test radionuclide identification we used various radionuclide samples; plutonium, europium and other standard sources. Pulse height spectra were obtained by standard electronics which consists of a preamplifier, a shaping amplifier, and a multi-channel analyzer. (author)

Use of semiconductor detectors for radioactive waste account and control

CERN Document Server

Davydov, L N; Zakharchenko, A A

2002-01-01

The possibilities and development status of the contemporary semiconductor detectors and detecting devices intended for radiation monitoring at nuclear industry enterprises, including Chernobyl Shelter and depositories of nuclear wastes are shown. Such devices,created in the last years, can be successfully used for measurements of the gamma-radiation dose rate as well as for the isotope composition evaluation of nuclear materials and wastes, both during the work cycles and in emergency situations.

Self-assembly of a 1-eicosanethiolate layer on InSb(100)

Energy Technology Data Exchange (ETDEWEB)

Contreras, Yissel; Muscat, Anthony J., E-mail: muscat@email.arizona.edu

2016-05-01

Highlights: • 1-Eicosanethiolate molecules form weak bonds with InSb(100) limiting order in the SAM. • The low interaction energy of the molecules is shown by ATR-FTIR and desorption. • The bond that S makes with the substrate determines the cohesiveness of the molecules. - Abstract: 1-Eicosanethiolate molecules form relatively weak bonds with the surface of InSb(100) limiting the order of the self-assembled monolayer despite the long length of the alkyl chain. Heating to only 225 °C in vacuum completely desorbed the eicosanethiolate layer from the surface based on X-ray photoelectron spectroscopy. Even after deposition times as long as 20 h in ethanol, the asymmetric methylene stretch was at 2925 cm{sup −1} in the attenuated total reflection Fourier transform infrared spectrum, which is indicative of alkane chains that are incompletely ordered. Atomic force microscopy images combined with ellipsometry showed that the eicosanethiolate layer conformed to the rough InSb(100) starting surface (2.3 ± 0.2 nm RMS). The reoxidation kinetics in air of InSb(100) and InSb(111)B covered with eicosanethiolate layers was the same despite the lower surface roughness of the latter (0.64 ± 0.14 nm). The bond that the S head group makes with the substrate is the primary factor that determines the cohesiveness of the molecules on the surface. Although interactions between the alkane chains in the layer are sufficient to form a self-assembled layer, the fluidity of the molecules in the layer compromised the chemical passivation of the surface resulting in reoxidation in air after 20 min.

Current applications of semiconductor x-ray detectors in chemical analysis

International Nuclear Information System (INIS)

Whitehead, N.E.

1975-07-01

In the last few years, semiconductor detectors have been used as X-ray detectors with great success, and the routine rapid accumulation of X-ray spectra is now possible. This review surveys the historical development of the detectors, the utilisation, and relative merits of various means of exciting the X-radiation from the elements in the sample, and compares the technique with other methods claiming to offer the capability of simultaneous multi-element analysis. It is concluded that it is of average sensitivity, but offers some advantages from its non-destructive nature, and in some cases its ability to offer information about the spatial distribution of elements in a sample. Other types of analysis may also be possible simultaneously. Sample preparation techniques are reviewed, especially techniques of manufacturing thin samples. An appendix contains details of the very wide variety of samples which have been analysed. More than 350 references are included. (auth.)

Peculiarities of magnetoresistance in InSb whiskers at cryogenic temperatures

Energy Technology Data Exchange (ETDEWEB)

Druzhinin, A., E-mail: druzh@polynet.lviv.ua [Lviv Polytechnic National University, Bandera Str., 12, 79013 Lviv (Ukraine); International Laboratory of High Magnetic Fields and Low Temperatures, Gajowicka 95, Wroclaw (Poland); Ostrovskii, I.; Khoverko, Yu. [Lviv Polytechnic National University, Bandera Str., 12, 79013 Lviv (Ukraine); International Laboratory of High Magnetic Fields and Low Temperatures, Gajowicka 95, Wroclaw (Poland); Liakh-Kaguy, N.; Khytruk, I. [Lviv Polytechnic National University, Bandera Str., 12, 79013 Lviv (Ukraine); Rogacki, K. [International Laboratory of High Magnetic Fields and Low Temperatures, Gajowicka 95, Wroclaw (Poland)

2015-12-15

Highlights: • Magnetoresistance in InSb whiskers with impurity concentration near MIT is studied. • SdH oscillations of transverse and longitudinal magnetoresistance are examined. • Mechanisms of electron scattering are determined • Main crystal parameters of InSb whiskers are determined. - Abstract: The study of the magnetoresistance in InSb whiskers with an impurity concentration in the vicinity to the metal-insulator phase transition, at low temperature range 4.2–77 K, and in fields, with induction up to 14 T, was conducted. The presence of Shubnikov-de Haas oscillations in both transverse and longitudinal magnetoresistance was observed. The following parameters of InSb whiskers were defined: period of oscillations 0.1 T{sup −1}, cyclotron effective mass of electrons m{sub c} ≈ 0.14m{sub o,} concentration of charge carriers 2.3 × 10{sup 17} cm{sup −3}, g-factor g{sup *} ≈ 30 and Dingle temperature T{sub D} = 14.5 K. To determine the nature of crystal defects, the electron scattering processes on the short-range potential, caused by interaction with polar and nonpolar optical phonons, piezoelectric and acoustic phonons, static strain centers and ionized impurities in n-InSb whiskers, with defect concentration 2.9 × 10{sup 17} cm{sup −3}, are considered. The temperature dependences of electron mobility in the range 4.2–500 K were calculated.

Development and characterization of semiconductor ion detectors for plasma diagnostics in the range over 0.3 keV

Science.gov (United States)

Cho, T.; Sakamoto, Y.; Hirata, M.; Kohagura, J.; Makino, K.; Kanke, S.; Takahashi, K.; Okamura, T.; Nakashima, Y.; Yatsu, K.; Tamano, T.; Miyoshi, S.

1997-01-01

For the purpose of plasma-ion-energy analyses in a wide-energy range from a few hundred eV to hundreds of keV, upgraded semiconductor detectors are newly fabricated and characterized using a test-ion-beam line from 0.3 to 12 keV. In particular, the detectable lowest-ion energy is drastically improved at least down to 0.3 keV; this energy is one to two orders-of-magnitude better than those for commercially available Si-surface-barrier diodes employed for previous plasma-ion diagnostics. A signal-to-noise ratio of two to three orders-of-magnitude better than that for usual metal-collector detectors is demonstrated for the compact-sized semiconductor along with the availability of the use under conditions of a good vacuum and a strong-magnetic field. Such characteristics are achieved due to the improving methods of the optimization of the thicknesses of a Si dead layer and a SiO2 layer, as well as the nitrogen-doping technique near the depletion layer along with minimizing impurity concentrations in Si. Such an upgraded capability of an extremely low-energy-ion detection with the low-noise characteristics enlarges research regimes of plasma-ion behavior using semiconductor detectors not only in the divertor regions of tokamaks but in wider spectra of open-field plasma devices including tandem mirrors. An application of the semiconductor ion detector for plasma-ion diagnostics is demonstrated in a specially designed ion-spectrometer structure.

Measurement of neutron flux distribution by semiconductor detector

International Nuclear Information System (INIS)

Obradovic, D.; Bosevski, T.

1964-01-01

Application of semiconductor detectors for measuring neutron flux distribution is about 10 times faster than measurements by activation foils and demands significantly lower reactor power. Following corrections are avoided: mass of activation foils which influences the self shielding, nuclear decay during activity measurements; counter dead-time. It is possible to control the measured data during experiment and repeat measurements if needed. Precision of the measurement is higher since it is possible to choose the wanted statistics. The method described in this paper is applied for measurements at the RB reactor. It is concluded that the method is suitable for fast measurements but the activation analysis is still indispensable

Response function and optimum configuration of semiconductor backscattered-electron detectors for scanning electron microscopes

International Nuclear Information System (INIS)

Rau, E. I.; Orlikovskiy, N. A.; Ivanova, E. S.

2012-01-01

A new highly efficient design for semiconductor detectors of intermediate-energy electrons (1–50 keV) for application in scanning electron microscopes is proposed. Calculations of the response function of advanced detectors and control experiments show that the efficiency of the developed devices increases on average twofold, which is a significant positive factor in the operation of modern electron microscopes in the mode of low currents and at low primary electron energies.

Diamond turning of small Fresnel lens array in single crystal InSb

International Nuclear Information System (INIS)

Jasinevicius, R G; Duduch, J G; Cirino, G A; Pizani, P S

2013-01-01

A small Fresnel lens array was diamond turned in a single crystal (0 0 1) InSb wafer using a half-radius negative rake angle (−25°) single-point diamond tool. The machined array consisted of three concave Fresnel lenses cut under different machining sequences. The Fresnel lens profiles were designed to operate in the paraxial domain having a quadratic phase distribution. The sample was examined by scanning electron microscopy and an optical profilometer. Optical profilometry was also used to measure the surface roughness of the machined surface. Ductile ribbon-like chips were observed on the cutting tool rake face. No signs of cutting edge wear was observed on the diamond tool. The machined surface presented an amorphous phase probed by micro Raman spectroscopy. A successful heat treatment of annealing was carried out to recover the crystalline phase on the machined surface. The results indicated that it is possible to perform a ‘mechanical lithography’ process in single crystal semiconductors. (paper)

Performance and operation experience of the Atlas Semiconductor Tracker and Pixel Detector at the LHC.

CERN Document Server

Stanecka, E; The ATLAS collaboration

2013-01-01

After more than 3 years of successful operation at the LHC, we report on the operation and performance of the ATLAS Pixel Detector and Semi-Conductor Tracker (SCT) functioning in a high luminosity, high radiation environment.

The system of digital-image optical microscope in semiconductor particle detector development

International Nuclear Information System (INIS)

Han Lixiang; Li Zhankui; Jin Genming; Wang Zhusheng; Xiao Guoqing

2009-01-01

Optical microscopic detection is very important in the process of semiconductor particle detector development. A system of digital-image optical microscope has been constructed with rather low price, which performance is comparable with the moderate-level imports. The system mounts powerful dry objective, and a 2μm resolution could be achieved. Observations with bright and dark field, polarized light,and interference light can be carried out on it. The system have large area on-line monitor,and the photographic device can be controlled by PC. It can be used in the control of defects and contaminations, pattern test, identification of crystal backing, inspection of the smoothness and the flatness of the crystal surface. It can also be used in some precise procedures, such as test, assembly, packaging and repairing. The quality of the bond could be examined by observing the appearance of the bond point and the microscopic structure of the solder. The surface fluctuation can be precisely measured under the microscope with the technology of multi-beam interference. In the article, the application of this system for semiconductor particle detector development has been illustrated, and the construction information has been described in detail. (authors)

Development of novel semiconductor detectors for the detection of ionizing radiation

International Nuclear Information System (INIS)

Strueder, L.

1989-08-01

The present thesis treats the development of novel energy- and position-resolving semiconductor detectors: Fully depletable pn CCD's. In experiments of high-energy physics they are suited as highly resolving position-sensitive detectors for minimally ionizing particles. In nuclear and atomic physics they can be applied as position-resolving energy spectrometers. Increasing interest detectors of this type find also at synchrotron-radiation sources with photon energies from 20 eV to 50 keV. As focal instruments of X-ray telescopes they are in astrophysical measurements in an energy range from 100 eV to 15 keV of use. The required accuracy in the energy measurement amounts to 100 eV (FWHM) at an X-ray energy of 1 keV, at a simultaneous precision of the position determination of 50 μm. The measurement results which are here presented on the first fully depletable CCD's show that the components posses the potential to fulfill these requirements. (orig.) [de

Preliminary report on the development of a high resolution PET camera using semiconductor detectors

International Nuclear Information System (INIS)

Kikuchi, Yohei; Ishii, Keizo; Yamazaki, Hiromichi; Matsuyama, Shigeo; Yamaguchi, Takashi; Yamamoto, Yusuke; Sato, Takemi; Aoki, Yasushi; Aoki, Kenichi

2005-01-01

We are developing a PET camera using small semiconductor detectors, whose resolution is equivalent to the physical limit of spatial resolution. First, a coincidence system of 16 Schottky CdTe detectors of 0.5 mm width obtained a resolution of <1 mm and it was confirmed that the Schottky CdTe detector is suitable for high resolution PET. Next, the performance of a pair of 32 channel CdTe arrays (1.2 mm width per channel) was investigated for the development of the prototype of high resolution PET. The time resolution between opposing detector pair was 13 ns (FWHM) when high voltage (700 V) was applied. The image of a 0.6 mm diameter point source was obtained in an experiment with opposing detector arrays using four channels, indicating that, a higher resolution can be achieved with the 32 channel CdTe array

Coherent Charge Transport in Ballistic InSb Nanowire Josephson Junctions

Science.gov (United States)

Li, S.; Kang, N.; Fan, D. X.; Wang, L. B.; Huang, Y. Q.; Caroff, P.; Xu, H. Q.

2016-01-01

Hybrid InSb nanowire-superconductor devices are promising for investigating Majorana modes and topological quantum computation in solid-state devices. An experimental realisation of ballistic, phase-coherent superconductor-nanowire hybrid devices is a necessary step towards engineering topological superconducting electronics. Here, we report on a low-temperature transport study of Josephson junction devices fabricated from InSb nanowires grown by molecular-beam epitaxy and provide a clear evidence for phase-coherent, ballistic charge transport through the nanowires in the junctions. We demonstrate that our devices show gate-tunable proximity-induced supercurrent and clear signatures of multiple Andreev reflections in the differential conductance, indicating phase-coherent transport within the junctions. We also observe periodic modulations of the critical current that can be associated with the Fabry-Pérot interference in the nanowires in the ballistic transport regime. Our work shows that the InSb nanowires grown by molecular-beam epitaxy are of excellent material quality and hybrid superconducting devices made from these nanowires are highly desirable for investigation of the novel physics in topological states of matter and for applications in topological quantum electronics. PMID:27102689

Size-dependent energy levels of InSb quantum dots measured by scanning tunneling spectroscopy.

Science.gov (United States)

Wang, Tuo; Vaxenburg, Roman; Liu, Wenyong; Rupich, Sara M; Lifshitz, Efrat; Efros, Alexander L; Talapin, Dmitri V; Sibener, S J

2015-01-27

The electronic structure of single InSb quantum dots (QDs) with diameters between 3 and 7 nm was investigated using atomic force microscopy (AFM) and scanning tunneling spectroscopy (STS). In this size regime, InSb QDs show strong quantum confinement effects which lead to discrete energy levels on both valence and conduction band states. Decrease of the QD size increases the measured band gap and the spacing between energy levels. Multiplets of equally spaced resonance peaks are observed in the tunneling spectra. There, multiplets originate from degeneracy lifting induced by QD charging. The tunneling spectra of InSb QDs are qualitatively different from those observed in the STS of other III-V materials, for example, InAs QDs, with similar band gap energy. Theoretical calculations suggest the electron tunneling occurs through the states connected with L-valley of InSb QDs rather than through states of the Γ-valley. This observation calls for better understanding of the role of indirect valleys in strongly quantum-confined III-V nanomaterials.

Influence of hydrostatic pressure on nuclear radiation detector's properties based on semiconductor alloy CdZnTe

International Nuclear Information System (INIS)

Kutnij, V.E.; Kutnij, D.V.; Rybka, A.V.; Nakonechnyj, D.V.; Babun, A.V.

2003-01-01

The influence of hydrostatic pressure on properties of CdZnTe semiconductor detectors (Cd-50,Zn-2,Te-48 mas.%, 5 centre dot 5 centre dot 2 mm) was investigated. Were considered different types of hydrostatic treatment at 100 MPa, second hydrostatic treatment at 100 MPa and 200 MPa. Hydrostatic pressure influence on detectors electric resistance, J-V characteristics and spectrometric parameters was determined

Testing in a stratospheric balloon of a semiconductor detector altimeter

International Nuclear Information System (INIS)

Gilly, L.; Jourdan, P.

1968-01-01

An altimeter containing a semiconductor detector has been operated on flight. We have used a stratospheric balloon launched from AIRE-SUR-ADOUR with the C.N.E.S. collaboration. During this assay two apparatus have been used. The first allowed to follow the balloon during its ascension and descent, the second to follow its evolution at its maximum altitude. Informations transmitted by radio and recorded on Magnetophon, have been studied after the flight. Results are identical with these given by the barometer used by the C.N.E.S. in this essay. (authors) [fr

Dosimetric evaluation of semiconductor detectors for application in neutron dosimetry and microdosimetry in nuclear reactor and radiosurgical facilities

International Nuclear Information System (INIS)

Cardenas, Jose Patricio Nahuel

2010-01-01

The main objective of this research is the dosimetric evaluation of semiconductor components (surface barrier detectors and PIN photodiodes) for applications in dose equivalent measurements on low dose fields (fast and thermal fluxes) using an AmBe neutron source, the IEA-R1 reactor neutrongraphy facility (epithermal and thermal fluxes) and the Critical Unit facility IPEN/MB-01 (fast fluxes). As moderator compound to fast neutrons flux from the AmBe source was used paraffin and boron and polyethylene as converter for thermal and fast neutrons measurements. The resulting fluxes were used to the irradiation of semiconductor components (SSB - Surface Barrier Detector and PIN photodiodes). A mixed converter made of a borated polyethylene foil (Kodak) was also used. Monte Carlo simulation methodology was employed to evaluate analytically the optimal paraffin thickness. The obtained results were similar to the experimental data and allowed the evaluation of emerging neutron flux from moderator, as well as the fast neutron flux reaching the polyethylene covering the semiconductor sensitive surface. Gamma radiation levels were evaluated covering the whole detector with cadmium foil 1 mm thick, allowing thermal neutrons blockage and gamma radiation measurements. The IPEN/MB-01 facility was employed to evaluate the detector response for high neutron flux. The results were in good agreement with other studies published. Using the obtained spectra an approach to dose equivalent calculation was established. (author)

Alpha- and gamma-detection by the avalanche detectors with metal-resistor-semiconductor structure

International Nuclear Information System (INIS)

Vetokhin, S.S.; Evtushenko, V.P.; Zalesskij, V.B.; Malyshev, S.A.; Chudakov, V.A.; Shunevich, S.A.

1992-01-01

Possibility to use silicon avalanche photodetectors with metal-resistor-semiconductor structure with 0.12 cm 2 photosensitive area as detectors of α-particles, as well as, photodetector of γ-quanta scintillation detector is shown. When detection of α-particles the energy resolution reaches 10%. R energy resolution for avalanche photodetector-CsI(Tl) scintillator system cooled up to - 60 deg C at 59 keV ( 241 Am) and 662 keV ( 137 Cs) energy of γ-quanta constitutes 60% and 80%, respectively. R minimal value in the conducted experiments is determined by the degree of irregularity of avalanche amplification along the photodetector area

Astronomical imaging with a low temperature InSb charge injection device (CID)

International Nuclear Information System (INIS)

Rouan, D.; Lacombe, F.; Tiphene, D.; Stefanovitch, D.; Phan van, D.

1986-01-01

InSb charge injection device (CID) technology focal plane arrays employ two coupled MIS capacitors which collect and store photon-generated charge carriers. Attention is presently given to two-dimensional arrays for 77 K and 4 K operating temperatures in astronomical applications; two such prototypes for ground observations have been developed for use with a 2-m telescope. A CID InSb array is noted to be a useful candidate for the proposed IR Space Observatory's focal plane camera. 7 references

Semiconductor micropattern pixel detectors a review of the beginnings

CERN Document Server

Heijne, Erik H M

2001-01-01

The innovation in monolithic and hybrid semiconductor 'micropattern' or 'reactive' pixel detectors for tracking in particle physics was actually to fit logic and pulse processing electronics with µW power on a pixel area of less than 0.04 mm2, retaining the characteristics of a traditional nuclear amplifier chain. The ns timing precision in conjunction with local memory and logic operations allowed event selection at > 10 MHz rates with unambiguous track reconstruction even at particle multiplicities > 10 cm-2. The noise in a channel was ~100 e- r.m.s. and enabled binary operation with random noise 'hits' at a level 30 Mrad, respectively.

Reconstructions of the sulfur-passivated InSb (100) surface

Energy Technology Data Exchange (ETDEWEB)

Ciochoń, Piotr, E-mail: piotr.ciochon@doctoral.uj.edu.pl; Olszowska, Natalia; Wróbel, Sonia; Kołodziej, Jacek

2017-04-01

Highlights: • Two new surface reconstructions of a S-passivated InSb (001) surface are reported. • The reconstructions are obtained through partial loss of surface sulfur. • They are characterized by the thickness of ∼4 Å and good crystallographic ordering. • The reconstructions provide adequate electronic passivation of the surface. - Abstract: We have studied the properties of the InSb (100) surface passivated with sulfur dimers emitted by the solid-state electrochemical cell in ultra-high vacuum. Annealing the passivated surface in the temperature equal to T = 326 °C led to the formation of the c(4 × 8) surface reconstruction, while increasing the temperature to T = 348 °C resulted in the transition to c(4 × 12) reconstruction. To the best of our knowledge these reconstructions have not been reported to date and are characterized by the exceptionally good crystallographic order. XPS studies revealed that there are at least 4 different chemical species of sulfur present on the surface and the estimated thickness of the sulfur layers is equal to around 4 Å. The surface reconstructions are characterized by the lowered intensity of the surface electronic states and resonances near the Fermi level, compared to the clean InSb surface, making them potentially very useful for the fabrication of InSb-based electronic and optoelectronic devices.

On selecting a sensitive region thickness of a silicon semiconductor detector for operation under counting conditions

International Nuclear Information System (INIS)

Pronkin, N.S.; Khakhalin, V.V.

1972-01-01

The paper discusses the selection of a thickness of a sensitive area of a silicon semiconductor detector, used in the count regime based on the signal to noise ratio and β-radiation registration efficiency. (author)

Systematization of efficiency correction for gamma-ray disk sources with semiconductor detectors

International Nuclear Information System (INIS)

Chatani, Hiroshi

1999-01-01

Full energy peak efficiency correction for disk sources has been systematically studied using the mapping method with two high-purity germanium detectors and two low-energy photon spectrometers. The following are found using only single-line (i.e., no coincidence summing loses) γ-rays: (1) The efficiency distributions on a plane parallel to the entrance window of semiconductor detectors is in perfect accord with Gaussian curves inside the circumference of the cylindrical Ge crystal, however, they deviate from the curves outside the circumference. (2) The width parameters of the Gaussian function fitted to the efficiency distributions have a systematic relationship with γ-ray energy. (3) The mapping method is of practical use and has satisfactory accuracy

Silicon radiation detectors

International Nuclear Information System (INIS)

Lutz, G.

1995-01-01

An introduction to and an overview of function principles and properties of semiconductor radiation detectors is attempted. The paper is addressed to people interested in detector development but not already experts in the field of semiconductor detectors. (orig.)

Semiconductor scintillator detector for gamma radiation

International Nuclear Information System (INIS)

Laan, F.T.V. der; Borges, V.; Zabadal, J.R.S.

2015-01-01

Nowadays the devices employed to evaluate individual radiation exposition are based on dosimetric films and thermoluminescent crystals, whose measurements must be processed in specific transductors. Hence, these devices carry out indirect measurements. Although a new generation of detectors based on semiconductors which are employed in EPD's (Electronic Personal Dosemeters) being yet available, it high producing costs and large dimensions prevents the application in personal dosimetry. Recent research works reports the development of new detection devices based on photovoltaic PIN diodes, which were successfully employed for detecting and monitoring exposition to X rays. In this work, we step forward by coupling a 2mm anthracene scintillator NE1, which converts the high energy radiation in visible light, generating a Strong signal which allows dispensing the use of photomultipliers. A low gain high performance amplifier and a digital acquisition device are employed to measure instantaneous and cumulative doses for energies ranging from X rays to Gamma radiation up to 2 MeV. One of the most important features of the PIN diode relies in the fact that it can be employed as a detector for ionization radiation, since it requires a small energy amount for releasing electrons. Since the photodiode does not amplify the corresponding photon current, it must be coupled to a low gain amplifier. Therefore, the new sensor works as a scintillator coupled with a photodiode PIN. Preliminary experiments are being performed with this sensor, showing good results for a wide range of energy spectrum. (author)

The study of response of wide band gap semiconductor detectors using the Geant4

Directory of Open Access Journals (Sweden)

Hussain Riaz

2014-01-01

Full Text Available The energy dependence on the intrinsic efficiency, absolute efficiency, full energy peak absolute efficiency and peak-to-total ratio have been studied for various wide band gap semiconductor detectors using the Geant4 based Monte Carlo simulations. The detector thickness of 1-4 mm and the area in 16-100 mm2 range were considered in this work. In excellent agreement with earlier work (Rybka et al., [20], the Geant4 simulated values of detector efficiencies have been found to decrease with incident g-ray energy. Both for the detector thickness and the detector area, the increasing trends have been observed for total efficiency as well as for full-energy peak efficiency in 0.1 MeV-50 MeV range. For Cd1-xZnxTe, the detector response remained insensitive to changes in relative proportions of Zn. For various wide band gap detectors studied in this work, the detection efficiency of TlBr was found highest over the entire range of energy, followed by the HgI2, CdTe, and then by CZT.

Comparison of Cadmium-Zinc-Telluride semiconductor and Yttrium-Aluminum-Perovskite scintillator as photon detectors for epithermal neutron spectroscopy

International Nuclear Information System (INIS)

Tardocchi, M.; Pietropaolo, A.; Andreani, C.; Gorini, G.; Imberti, S.; Perelli-Cippo, E.; Senesi, R.; Rhodes, N.; Schooneveld, E.M.

2006-01-01

The range of applications of epithermal neutron scattering experiments has been recently extended by the development of the Resonance Detector. In a Resonance Detector, resonant neutron absorption in an analyzer foil results in prompt emission of X- and γ-rays which are detected by a photon counter. Several combinations of analyzer foils and photon detectors have been studied and tested over the years and best results have been obtained with the combination of a natural uranium and (i) Cadmium-Zinc-Telluride (CZT) semiconductor (ii) Yttrium-Aluminum-Perovskite (YAP) scintillators. Here we compare the performance of the CZT semiconductor and YAP scintillator as Resonance Detector units. Two Resonance Detector prototypes made of natural uranium foil viewed by CZT and YAP were tested on the VESUVIO spectrometer at the ISIS spallation neutron source. The results show that both YAP and CZT can be used to detect epithermal neutrons in the energy range from 1 up to 66 eV. It was found that the signal-to-background ratio of the measurement can significantly be improved by raising the lower level discrimination threshold on the γ energy to about 600 keV. The advantages/disadvantages of the choice of a Resonance Detector based on YAP or CZT are discussed together with some potential applications

Determination of the mobility ratio in InSb at the temperature of the conductivity type conversion

Energy Technology Data Exchange (ETDEWEB)

Somogyi, K. [Research Institute for Technical Physics and Materials Science, HAS, 1525 Budapest, P.O. Box 49 (Hungary)

2005-05-01

The temperature dependence of magneto-transport in bulk p-type InSb was investigated, and a special approach was applied for the precise determination of the temperature dependence. Such measurements also allow the determination of the mobility ratio (b) which is known to be large in InSb. Although this type of investigation is standard, in this work an improved method of carrying out temperature-dependent Hall measurements is reported and improved calculations for the determination of large b values in InSb are presented. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Response function of semiconductor detectors, Ge and Si(Li)

International Nuclear Information System (INIS)

Zevallos Chavez, Juan Yury

2003-01-01

The Response Function (RF) for Ge and Si(Li) semiconductor detectors was obtained. The RF was calculated for five detectors, four Hp Ge with active volumes of 89 cm 3 , 50 cm 3 , 8 cm 3 and 5 cm 3 , and one Si(Li) with 0.143 cm 3 of active volume. The interval of energy studied ranged from 6 keV up to 1.5 MeV. Two kinds of studies were done in this work. The first one was the RF dependence with the detection geometry. Here the calculation of the RF for a geometry named as simple and an extrapolation of that RF, were both done. The extrapolation process analyzed both, spectra obtained with a shielding geometry and spectra where the source-detector distance was modified. The second one was the RF dependence with the detection electronics. This study was done varying the shaping time of the pulse in the detection electronics. The purpose was to verify the effect of the ballistic deficit in the resolution of the detector. This effect was not observed. The RF components that describe the region of the total absorption of the energy of the incident photons, and the partial absorption of this energy, were both treated. In particular, empirical functions were proposed for the treatment of both, the multiple scattering originated in the detector (crystal), and the photon scattering originated in materials of the neighborhood of the crystal. Another study involving Monte Carlo simulations was also done in order to comprehend the photon scattering structures produced in an iron shield. A deconvolution method is suggested, for spectra related to scattered radiation in order to assess the dose delivered to the scatterer. (author)

Reaction probability of molecular deuterium with a disordered InSb (110) surface

International Nuclear Information System (INIS)

Wolf, B.; Zehe, A.

1987-01-01

A detailed experimental analysis of the interaction of molecular deuterium with sputter-damaged InSb surfaces by the aid of SIMS is given. The sticking probability of D 2 and its transformation to a chemisorbed state resulting in InD + signals in SIMS measurements can be determined by adsorption experimens both with and without a hot tungsten filament. The calculated sticking probability of D 2 = 2 x 10 -4 is at least three orders of magnitude higher than the known-value for a cleavage plane of InSb

Semiconductor X-ray spectrometers

International Nuclear Information System (INIS)

Muggleton, A.H.F.

1978-02-01

An outline is given of recent developments in particle and photon induced x-ray fluorescence (XRF) analysis. Following a brief description of the basic mechanism of semiconductor detector operation a comparison is made between semiconductor detectors, scintillators and gas filled proportional devices. Detector fabrication and cryostat design are described in more detail and the effects of various device parameters on system performance, such as energy resolution, count rate capability, efficiency, microphony, etc. are discussed. The main applications of these detectors in x-ray fluorescence analysis, electron microprobe analysis, medical and pollution studies are reviewed

Advanced crystal growth techniques for thallium bromide semiconductor radiation detectors

Science.gov (United States)

Datta, Amlan; Becla, Piotr; Guguschev, Christo; Motakef, Shariar

2018-02-01

Thallium Bromide (TlBr) is a promising room-temperature radiation detector candidate with excellent charge transport properties. Currently, Travelling Molten Zone (TMZ) technique is widely used for growth of semiconductor-grade TlBr crystals. However, there are several challenges associated with this type of crystal growth process including lower yield, high thermal stress, and low crystal uniformity. To overcome these shortcomings of the current technique, several different crystal growth techniques have been implemented in this study. These include: Vertical Bridgman (VB), Physical Vapor Transport (PVT), Edge-defined Film-fed Growth (EFG), and Czochralski Growth (Cz). Techniques based on melt pulling (EFG and Cz) were demonstrated for the first time for semiconductor grade TlBr material. The viability of each process along with the associated challenges for TlBr growth has been discussed. The purity of the TlBr crystals along with its crystalline and electronic properties were analyzed and correlated with the growth techniques. Uncorrected 662 keV energy resolutions around 2% were obtained from 5 mm x 5 mm x 10 mm TlBr devices with virtual Frisch-grid configuration.

Subsurface dimerization in III-V semiconductor (001) surfaces

DEFF Research Database (Denmark)

Kumpf, C.; Marks, L.D.; Ellis, D.

2001-01-01

We present the atomic structure of the c(8 X 2) reconstructions of InSb-, InAs-, and GaAs-(001) surfaces as determined by surface x-ray diffraction using direct methods. Contrary to common belief, group III dimers are not prominent on the surface, instead subsurface dimerization of group m atoms ...... takes place in the second bilayer, accompanied by a major rearrangement of the surface atoms above the dimers to form linear arrays. By varying the occupancies of four surface sites the (001)-c(8 X 2) reconstructions of III-V semiconductors can be described in a unified model....

Pulse-height loss in the signal readout circuit of compound semiconductor detectors

Science.gov (United States)

Nakhostin, M.; Hitomi, K.

2018-06-01

Compound semiconductor detectors such as CdTe, CdZnTe, HgI2 and TlBr are known to exhibit large variations in their charge collection times. This paper considers the effect of such variations on the measurement of induced charge pulses by using resistive feedback charge-sensitive preamplifiers. It is shown that, due to the finite decay-time constant of the preamplifiers, the capacitive decay during the signal readout leads to a variable deficit in the measurement of ballistic signals and a digital pulse processing method is employed to correct for it. The method is experimentally examined by using sampled pulses from a TlBr detector coupled to a charge-sensitive preamplifier with 150 μs of decay-time constant and 20 % improvement in the energy resolution of the detector at 662 keV is achieved. The implications of the capacitive decay on the correction of charge-trapping effect by using depth-sensing technique are also considered.

Dislocation motion in InSb crystals under a magnetic field

CERN Document Server

Darinskaya, E V; Erofeeva, S A

2002-01-01

Dislocation displacements under the action of a permanent magnetic field without mechanical loading in differently doped InSb crystals are investigated. The dependences of the mean dislocation path length and the relative number of divergence and tightening half-loops on the magnetic induction and preliminary load are obtained. Experiments on n-InSb crystals with Te impurities and on p-InSb crystals with Ge impurities have shown a sensitivity of the magnetoplasticity to the conductivity type and the dopant content. Study of the magnetoplastic effect in the initial deformed InSb crystals shows that internal stresses decrease the lengths of divergence dislocation paths and simultaneously increase the threshold magnetic field above which the magnetoplastic effect exists. Possible reasons for the observed phenomena are discussed.

Detector applications

International Nuclear Information System (INIS)

Pehl, R.H.

1977-10-01

Semiconductor detectors are now applied to a very wide range of problems. The combination of relatively low cost, excellent energy resolution, and simultaneous broad energy-spectrum analysis is uniquely suited to many applications in both basic and applied physics. Alternative techniques, such as magnetic spectrometers for charged-particle spectroscopy, while offering better energy resolution, are bulky, expensive, and usually far more difficult to use. Furthermore, they do not directly provide the broad energy-spectrum measurements easily accomplished using semiconductor detectors. Scintillation detectors, which are approximately equivalent to semiconductor detectors in convenience and cost, exhibit 10 to 100 times worse energy resolution. However, their high efficiency and large potential size recommend their use in some measurements

Detection of radioactivity by semiconductors

International Nuclear Information System (INIS)

Anon.

1991-01-01

The class of detectors discussed in this chapter has a responsive component involving a diode, a junction between two types of semiconductor materials. Although diode detectors are not particularly efficient in counting radioactive emissions, they are superior to other commercially available detectors in spectroscopy. Consequently, diode detectors are used extensively for quanlitative purposes and for quantitative purposes when mixtures of radionuclides are present, not the usual situation with biological or medical research. Topics addressed in this chapter are as follows: Band Theory; Semiconductors and Junctions; and Radiation Detectors. 6 refs., 14 figs

Spectrometer based on the silicon semiconductor detectors for a study of the two charged particles correlation

International Nuclear Information System (INIS)

Krumsztein, Z.W.; Siemiarczuk, T.; Szawlowski, M.

1974-01-01

The spectrometer based on the silicon semiconductor detectors for a study of the correlation between two charged particles is described. The results of the time resolution and particles identification measurements are presented. The tests were performed in the proton beam of the JINR synchrocyclotron. (author)

Growth and characterization of an InSb infrared photoconductor on Si via an AlSb/GaSb buffer

Science.gov (United States)

Jia, Bo Wen; Tan, Kian Hua; Loke, Wan Khai; Wicaksono, Satrio; Yoon, Soon Fatt

2018-05-01

A 99.6% relaxed InSb layer is grown on a 6° offcut (1 0 0) Si substrate via an AlSb/GaSb buffer using molecular beam epitaxy (MBE). A 200 nm GaSb buffer is first grown on Si and the lattice mismatch between them is accommodated by an interfacial misfit (IMF) array consisting of uniformly distributed 90° misfit dislocations. Si delta doping is introduced during the growth of GaSb to reduce the density of threading dislocation. Subsequently, a 50 nm AlSb buffer is grown followed by a 0.8 μm InSb layer. The InSb layer exhibits a 300 K electron mobility of 22,300 cm2/Vs. An InSb photoconductor on Si is demonstrated with a photoconductive gain from 77 K to 200 K under a 700 °C maintained blackbody.

Dependence of surface distribution of self-assembled InSb nanodots on surface morphology and spacer layer thickness

Energy Technology Data Exchange (ETDEWEB)

Godbole, M., E-mail: mohit.godbole@nmmu.ac.za [Department of Physics, Nelson Mandela Metropolitan University, PO Box 77000, Port Elizabeth 6031 (South Africa); Olivier, E.J. [Department of Physics, Nelson Mandela Metropolitan University, PO Box 77000, Port Elizabeth 6031 (South Africa); Coetsee, E.; Swart, H.C. [Department of Physics, University of the Free State, PO Box 339, Bloemfontein 9300 (South Africa); Neethling, J.H.; Botha, J.R. [Department of Physics, Nelson Mandela Metropolitan University, PO Box 77000, Port Elizabeth 6031 (South Africa)

2012-05-15

Self-assembled InSb nanodots (NDs) were grown on a GaSb (1 0 0) substrate using metal-organic vapour phase epitaxy (MOVPE). The effects of etching depth of the substrate and thickness of the GaSb buffer layer on the density and size distribution of single and double layer dots were studied for detector applications. The etch depth of the substrate was varied up to 30 {mu}m. In this particular study, the dots were grown at 450 Degree-Sign C and the GaSb spacer thickness was varied between 50 nm and 200 nm. The optimum substrate etch depth was found to be 30 {mu}m while the best spacer thickness was found to be 200 nm.

Dependence of surface distribution of self-assembled InSb nanodots on surface morphology and spacer layer thickness

International Nuclear Information System (INIS)

Godbole, M.; Olivier, E.J.; Coetsee, E.; Swart, H.C.; Neethling, J.H.; Botha, J.R.

2012-01-01

Self-assembled InSb nanodots (NDs) were grown on a GaSb (1 0 0) substrate using metal-organic vapour phase epitaxy (MOVPE). The effects of etching depth of the substrate and thickness of the GaSb buffer layer on the density and size distribution of single and double layer dots were studied for detector applications. The etch depth of the substrate was varied up to 30 μm. In this particular study, the dots were grown at 450 °C and the GaSb spacer thickness was varied between 50 nm and 200 nm. The optimum substrate etch depth was found to be 30 μm while the best spacer thickness was found to be 200 nm.

In situ study of the formation kinetics of InSb quantum dots grown in an InAs(Sb) matrix

International Nuclear Information System (INIS)

Semenov, A. N.; Lyublinskaya, O. G.; Solov’ev, V. A.; Mel’tser, B. Ya.; Ivanov, S. V.

2008-01-01

Formation of InSb quantum dots grown in an InAs matrix by molecular-beam epitaxy that does not involve forced deposition of InSb is studied. Detection of intensity oscillations in the reflection of high-energy electron diffraction patterns was used to study in situ the kinetics of the formation of InSb quantum dots and an InAsSb wetting layer. The effects of the substrate temperature, the shutter operation sequence, and the introduction of growth interruptions on the properties of the array of InSb quantum dots are examined. Introduction of a growth interruption immediately after completing the exposure of the InAs surface to the antimony flux leads to a reduction in the nominal thickness of InSb and to an enhancement in the uniformity of the quantum-dot array. It is shown that, in the case of deposition of submonolayer-thickness InSb/InAs quantum dots, the segregation layer of InAsSb plays the role of the wetting layer. The Sb segregation length and segregation ratio, as well as their temperature dependences, are determined.

A proposal for both plasma ion- and electron-temperature diagnostics under simultaneous incidence of particles and x-rays into a semiconductor on the basis of a proposed model for a semiconductor detector response

International Nuclear Information System (INIS)

Numakura, T; Cho, T; Kohagura, J; Hirata, M; Minami, R; Yoshida, M; Nakashima, Y; Tamano, T; Yatsu, K; Miyoshi, S

2003-01-01

A method is proposed for obtaining radial profiles of plasma temperatures of both plasma ion (T i ) and electron (T e ) simultaneously by the use of a semiconductor detector array. The method is based on our developed particle-response model for a semiconductor detector; in particular, the response theory is constructed for giving the applicability in particle energies ranging down to a kiloelectronvolt. Calculated results from our model are in fairly good agreement with experimental data on the detector response of incident particle beams with energies in the range 100 eV to a few kiloelectronvolts. On the basis of the verification of the proposed model, an idea of the use of a developed semiconductor detector array covered with 'reliably unbreakable' ultrathin SiO 2 'dead-layer filters' having various nanometre-order thicknesses is applied for simultaneous T i and T e analyses by using charge-exchange neutral particles and x-rays from plasmas. Radial profiles of T i and T e are obtained in a single plasma discharge alone, and the data reliability is independently cross-checked by a radial scan of a conventional charge-exchange neutral-particle analyser system as well as a 50-channel microchannel plate x-ray diagnostics system in the GAMMA 10 tandem mirror

Semiclassical Monte Carlo simulation studies of spin dephasing in InP and InSb nanowires

Directory of Open Access Journals (Sweden)

Ashish Kumar

2012-03-01

Full Text Available We use semiclassical Monte Carlo approach to investigate spin polarized transport in InP and InSb nanowires. D’yakonov-Perel (DP relaxation and Elliott-Yafet (EY relaxation are the two main relaxation mechanisms for spin dephasing in III-V channels. The DP relaxation occurs because of bulk inversion asymmetry (Dresselhaus spin-orbit interaction and structural inversion asymmetry (Rashba spin-orbit interaction. The injection polarization direction studied is that along the length of the channel. The dephasing rate is found to be very strong for InSb as compared to InP which has larger spin dephasing lengths. The ensemble averaged spin components vary differently for both InP and InSb nanowires. The steady state spin distribution also shows a difference between the two III-V nanowires.

Design and test of a prototype silicon detector module for ATLAS Semiconductor Tracker endcaps

International Nuclear Information System (INIS)

Clark, A.G.; Donega, M.; D'Onofrio, M.

2005-01-01

The ATLAS Semiconductor Tracker (SCT) will be a central part of the tracking system of the ATLAS experiment. The SCT consists of four concentric barrels of silicon detectors as well as two silicon endcap detectors formed by nine disks each. The layout of the forward silicon detector module presented in this paper is based on the approved layout of the silicon detectors of the SCT, their geometry and arrangement in disks, but uses otherwise components identical to the barrel modules of the SCT. The module layout is optimized for excellent thermal management and electrical performance, while keeping the assembly simple and adequate for a large scale module production. This paper summarizes the design and layout of the module and present results of a limited prototype production, which has been extensively tested in the laboratory and testbeam. The module design was not finally adopted for series production because a dedicated forward hybrid layout was pursued

Radiation detectors

International Nuclear Information System (INIS)

2013-01-01

This sixth chapter presents the operational principles of the radiation detectors; detection using photographic emulsions; thermoluminescent detectors; gas detectors; scintillation detectors; liquid scintillation detectors; detectors using semiconductor materials; calibration of detectors; Bragg-Gray theory; measurement chain and uncertainties associated to measurements

Wide Bandgap Semiconductor Detector Optimization for Flash X-Ray Measurements

Energy Technology Data Exchange (ETDEWEB)

Roecker, Caleb Daniel [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Schirato, Richard C. [Los Alamos National Lab. (LANL), Los Alamos, NM (United States)

2017-11-17

Charge trapping, resulting in a decreased and spatially dependent electric field, has long been a concern for wide bandgap semiconductor detectors. While significant work has been performed to characterize this degradation at varying temperatures and radiation environments, this work concentrates upon examining the event-to-event response in a flash X-ray environment. The following work investigates if charge trapping is a problem for CZT detectors, with particular emphasis on flash X-ray radiation fields at cold temperatures. Results are compared to a non-flash radiation field, using an Am-241 alpha source and similar temperature transitions. Our ability to determine if a response change occurred was hampered by the repeatability of our flash X-ray systems; a small response change was observed with the Am-241 source. Due to contrast of these results, we are in the process of revisiting the Am-241 measurements in the presence of a high radiation environment. If the response change is more pronounced in the high radiation environment, a similar test will be performed in the flash X-ray environment.

On the problem of propagation of magnetoplasma surface waves in semiconductors

International Nuclear Information System (INIS)

Davydov, A.B.; Zakharov, V.A.

1975-01-01

A calculation is made of the spectrum of surface waves traveling along a boundary separating a dielectric from a magnetized semiconductor plasma parallel or at right angles to a magnetic field B. Dispersion relationships are obtained for the k is parallel to B case and these relationships explain the origin of the investigated surface waves on the boundary of a two-component (electron-hole) plasma in InSb. An analysis is made of the dispersion of the surface waves in the k is perpendicular to B case, which leads to a nonreciprocal propagation. (author)

Dopant-free twinning superlattice formation in InSb and InP nanowires

Energy Technology Data Exchange (ETDEWEB)

Yuan, Xiaoming [School of Physics and Electronics, Hunan Key Laboratory for Supermicrostructure and Ultrafast Process, Central South University, Changsha, Hunan (China); Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra, ACT (Australia); Guo, Yanan; Caroff, Philippe; Tan, Hark Hoe; Jagadish, Chennupati [Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra, ACT (Australia); He, Jun [School of Physics and Electronics, Hunan Key Laboratory for Supermicrostructure and Ultrafast Process, Central South University, Changsha, Hunan (China)

2017-11-15

Periodic arrangement of twin planes creates a controllable polytype that can affect both the electronic and optical properties of nanowires. The approach that is most used for inducing twinning superlattice (TSL) formation in III-V nanowires is introducing impurity dopants during growth. Here, we demonstrate that controlling the growth parameters is sufficient to produce regular twinning planes in Au-catalysed InSb and InP nanowires. Our results show that TSL formation in InSb nanowires only exists in a very narrow growth window. We suggest that growth conditions induce a high concentration of In (or Sb) in the Au droplet, which plays a similar role to that of surfactant impurities such as Zn, and increases the droplet wetting angle to yield a geometry that is favorable for TSL formation. The demonstration of TSL structure in InSb and InP nanowires by controlling the input of In (or Sb) further enhances fundamental understanding of TSL formation in III-V nanowires and allows us to tune the properties of these nanowires by crystal phase engineering. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Dopant-free twinning superlattice formation in InSb and InP nanowires

International Nuclear Information System (INIS)

Yuan, Xiaoming; Guo, Yanan; Caroff, Philippe; Tan, Hark Hoe; Jagadish, Chennupati; He, Jun

2017-01-01

Periodic arrangement of twin planes creates a controllable polytype that can affect both the electronic and optical properties of nanowires. The approach that is most used for inducing twinning superlattice (TSL) formation in III-V nanowires is introducing impurity dopants during growth. Here, we demonstrate that controlling the growth parameters is sufficient to produce regular twinning planes in Au-catalysed InSb and InP nanowires. Our results show that TSL formation in InSb nanowires only exists in a very narrow growth window. We suggest that growth conditions induce a high concentration of In (or Sb) in the Au droplet, which plays a similar role to that of surfactant impurities such as Zn, and increases the droplet wetting angle to yield a geometry that is favorable for TSL formation. The demonstration of TSL structure in InSb and InP nanowires by controlling the input of In (or Sb) further enhances fundamental understanding of TSL formation in III-V nanowires and allows us to tune the properties of these nanowires by crystal phase engineering. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

The electron mobility and thermoelectric power in InSb at atmospheric and hydrostatic pressures

International Nuclear Information System (INIS)

Litwin-Staszewska, E.; Piotrzkowski, R.; Szymanska, W.

1981-01-01

First, theoretical calculations of electron mobility and thermoelectric power in n-type InSb are reported at liquid nitrogen and room temperatures. All the scattering mechanisms of importance in InSb are taken into account. The calculations based upon a variational solution of the Boltzmann equation are compared with experimental results over the whole available range of electron concentrations. Good agreement between theoretical and experimental results is obtained using the value of deformation potential constant C = 14.6 eV. Secondly, both, experimental and theoretical investigations are made of mobility in InSb under hydrostatic pressure at 77 K within a wide range of electron concentrations. The smallest electron concentrations obtained by freezing the conduction electrons on the metastable states are of order of 1x10 12 cm -3 . Also for those smallest concentration it is possible to describe theoretically the dependence of mobility on the hydrostatic pressure using the same set of parameters as previously, and assuming some compensation of donors by acceptors. (author)

Monte-Carlo study of electron noise in compensated InSb

International Nuclear Information System (INIS)

Ašmontas, S; Raguotis, R; Bumelienė, S

2015-01-01

The results of Monte Carlo simulations of the electron noise in lightly doped and strongly compensated n-type InSb are presented. The strong electron scattering by ionized impurities is established to change essentially the electron distribution function, spectral density of velocity fluctuations and the dependence of noise temperature on the electric field strength. It is found that the electron noise temperature in strongly compensated InSb with low electron density at liquid nitrogen temperature is close to the lattice temperature in a wide range of electric field strength in which the electron gas cooling effect takes place. The increase of electron density is shown to weaken the electron gas cooling effect due to more intensive electron–electron collisions stimulating delocalization of electrons from the bottom of the conduction band. A satisfactory agreement between calculations and available experimental data is obtained. (paper)

Very Low-Power Consumption Analog Pulse Processing ASIC for Semiconductor Radiation Detectors

International Nuclear Information System (INIS)

Wessendorf, K.O.; Lund, J.C.; Brunett, B.A.; Laguna, G.R.; Clements, J.W.

1999-01-01

We describe a very-low power consumption circuit for processing the pulses from a semiconductor radiation detector. The circuit was designed for use with a cadmium zinc telluride (CZT) detector for unattended monitoring of stored nuclear materials. The device is intended to be battery powered and operate at low duty-cycles over a long period of time. This system will provide adequate performance for medium resolution gamma-ray pulse-height spectroscopy applications. The circuit incorporates the functions of a charge sensitive preamplifier, shaping amplifier, and peak sample and hold circuit. An application specific integrated circuit (ASIC) version of the design has been designed, built and tested. With the exception of the input field effect transistor (FET), the circuit is constructed using bipolar components. In this paper the design philosophy and measured performance characteristics of the circuit are described

Development and application of nuclear radiation detector made from high resistivity silicon and compound semiconductor

International Nuclear Information System (INIS)

Ding Honglin; Zhang Xiufeng; Zhang Wanchang; Li Jiang

1995-11-01

The development of high resistivity silicon detectors and compound semiconductor detectors as well as their application in nuclear medicine are described. It emphasizes on several key techniques in fabricating detectors in order to meet their application in nuclear medicine. As for a high resistivity silicon detector, its counting rate to 125 I 28.5 keV X-ray has to be improved. So employing a conic mesa structure can increase the thickness of samples, and can raise the electric field of collecting charges under the same bias voltage. As for a GaAs detector, its performance of collecting charges has to be improved. So the thicknesses of GaAs samples are decreased and proper thermal treatment to make Ni-Ge-Au ohmic contacts are employed. Applying a suitable reverse bias voltage can obtain a fully depleted detector, and can obtain a lower forward turn-on voltage and a thinner weak electric field region. After resolving these key techniques, the performance of GaAs detectors has been distinctly improved. The count rate to 125 I X-ray has increased by three or five times under the same testing condition and background circumstance (2 refs., 8 figs., 3 tabs.)

Multi electrode semiconductors detectors

CERN Document Server

Amendolia, S R; Bertolucci, Ennio; Bosisio, L; Bradaschia, C; Budinich, M; Fidecaro, F; Foà, L; Focardi, E; Giazotto, A; Giorgi, M A; Marrocchesi, P S; Menzione, A; Ristori, L; Rolandi, Luigi; Scribano, A; Stefanini, A; Vincelli, M L

1981-01-01

Detectors with very high space resolution have been built in this laboratory and tested at CERN in order to investigate their possible use in high energy physics experiments. These detectors consist of thin layers of silicon crystals acting as ionization chambers. Thin electrodes, structured in strips or in more fancy shapes are applied to their surfaces by metal coating. The space resolution which could be reached is of the order of a few microns. An interesting feature of these solid state detectors is that they can work under very high or low external pressure or at very low temperature. The use of these detectors would strongly reduce the dimensions and the cost of high energy experiments. (3 refs).

Multi electrode semiconductor detectors

International Nuclear Information System (INIS)

Amendolia, S.R.; Batignani, G.; Bertolucci, E.; Bosisio, L.; Budinich, M.; Bradaschia, C.; Fidecaro, F.; Foa, L.; Focardi, E.; Giazotto, A.; Giorgi, M.A.; Marrocchesi, P.S.; Menzione, A.; Ristori, L.; Rolandi, L.; Scribano, A.; Stefanini, A.; Vincelli, M.L.

1981-01-01

Detectors with very high space resolution have been built in the laboratory and tested at CERN in order to investigate their possible use in high energy physics experiments. These detectors consist of thin layers of silicon crystals acting as ionization chambers. Thin electrodes, structured in strips or in more fancy shapes are applied to their surfaces by metal coating. The space resolution which could be reached is of the order of a few microns. An interesting feature of these solid state detectors is that they can work under very high or low external pressure or at very low temperature. The use of these detectors would strongly reduce the dimensions and the cost of high energy experiments. (Auth.)

Semiconductor Thermal Neutron Detector

Directory of Open Access Journals (Sweden)

Toru Aoki

2014-02-01

Full Text Available The  CdTe  and  GaN  detector  with  a  Gd  converter  have  been developed  and  investigated  as  a  neutron  detector  for neutron  imaging.  The  fabricated  Gd/CdTe  detector  with  the  25  mm  thick  Gd  was  designed  on  the  basis  of  simulation results  of  thermal  neutron  detection  efficiency  and  spatial  resolution.  The  Gd/CdTe  detector  shows  the  detection  of neutron  capture  gamma  ray  emission  in  the  155Gd(n,  g156Gd,  157Gd(n,  g158Gd  and  113Cd(n,  g114Cd  reactions  and characteristic X-ray emissions due to conversion-electrons generated inside the Gd film. The observed efficient thermal neutron detection with the Gd/CdTe detector shows its promise in neutron radiography application. Moreover, a BGaN detector has also investigated to separate neutron signal from gamma-ray clearly. 

Measurement stand for diagnosis of semiconductor detectors based on IBM PC/XT computer (4-way spectrometric analysis of pulses)

International Nuclear Information System (INIS)

Gruszecki, M.

1990-01-01

The technical assumptions and partial realization of our technological stand for quality inspection of semiconductor detectors for ionizing radiation manufactured in the INP in Cracow are described. To increase the efficiency of the measurements simultaneous checking of 4 semiconductor chips or finished products is suggested. In order to justify this measurement technique a review of possible variants of the measurement apparatus is presented for the systems consisting of home made units. Comparative parameters for the component modules and for complete measuring systems are given. The construction and operation of data acquisition system based on IBM PC/XT are described. The system ensures simultaneous registration of pulses obtained from 4 detectors with maximal rate of up to 500 x 10 3 pulses/s. 42 refs., 6 figs., 3 tabs. (author)

Semiconductor scintillator detector for gamma radiation; Detector cintilador semicondutor para radiacao gama

Energy Technology Data Exchange (ETDEWEB)

Laan, F.T.V. der; Borges, V.; Zabadal, J.R.S., E-mail: ftvdl@ufrgs.br, E-mail: borges@ufrgs.br, E-mail: jorge.zabadal@ufrgs.br [Universidade Federal do Rio Grande do Sul (GENUC/DEMEC/UFRGS), Porto Alegre, RS (Brazil). Grupo de Estudos Nucleares. Departamento de Engenharia Mecanica

2015-07-01

Nowadays the devices employed to evaluate individual radiation exposition are based on dosimetric films and thermoluminescent crystals, whose measurements must be processed in specific transductors. Hence, these devices carry out indirect measurements. Although a new generation of detectors based on semiconductors which are employed in EPD's (Electronic Personal Dosemeters) being yet available, it high producing costs and large dimensions prevents the application in personal dosimetry. Recent research works reports the development of new detection devices based on photovoltaic PIN diodes, which were successfully employed for detecting and monitoring exposition to X rays. In this work, we step forward by coupling a 2mm anthracene scintillator NE1, which converts the high energy radiation in visible light, generating a Strong signal which allows dispensing the use of photomultipliers. A low gain high performance amplifier and a digital acquisition device are employed to measure instantaneous and cumulative doses for energies ranging from X rays to Gamma radiation up to 2 MeV. One of the most important features of the PIN diode relies in the fact that it can be employed as a detector for ionization radiation, since it requires a small energy amount for releasing electrons. Since the photodiode does not amplify the corresponding photon current, it must be coupled to a low gain amplifier. Therefore, the new sensor works as a scintillator coupled with a photodiode PIN. Preliminary experiments are being performed with this sensor, showing good results for a wide range of energy spectrum. (author)

Noise and optimum filtering in spectrometers with semiconductor detectors operating at elevated temperature

International Nuclear Information System (INIS)

Dabrowski, W.; Korbel, K.

1983-01-01

The importance of the excess noise in the semiconductor detectors operating at the elevated temperature is discussed. Under the assumption of a conventional CR-RC type filtration the variancy of the noise output is determined. The new term ''second noise-corner time constant'' was proposed. The expression for relative signal-to-noise ratio as the dependence on the noise as well as circuits time constants was derived. It was also presented in a graphical form. 12 refs., 6 figs. (author)

Recent developments in materials and detectors for the infrared; Proceedings of the Meeting, Cannes, France, November 25, 26, 1985

Science.gov (United States)

Morten, F. D. (Editor); Seeley, John S. (Editor)

1986-01-01

The present conference on advancements in IR-sensitive materials and detector technologies employing them gives attention to thermal detectors, focal plane array processing detectors, novel detector designs, general properties of IR optics materials, and preparation methods for such materials. Specific topics encompass the fabrication of InSb MIS structures prepared by photochemical vapor deposition, IR heterodyne detectors employing cadmium mercury telluride, low microphony pyroelectric arrays, IR detection based on minority carrier extrusion, longwave reststrahl in IR crystals, and molecular beam techniques for optical thin film fabrication.

DEPFET-detectors: New developments

Energy Technology Data Exchange (ETDEWEB)

Lutz, G. [MPI Semiconductor Laboratory, Max Planck Institut fuer Physik, Otto Hahn Ring 6, D 81739 Munich (Germany)]. E-mail: gerhard.lutz@cern.ch; Andricek, L. [MPI Semiconductor Laboratory, Max Planck Institut fuer Physik, Otto Hahn Ring 6, D 81739 Munich (Germany); Eckardt, R. [MPI Semiconductor Laboratory, Max Planck Institut fuer extraterrestrische Physik, Otto Hahn Ring 6, D 81739 Munich (Germany); Haelker, O. [MPI Semiconductor Laboratory, Max Planck Institut fuer extraterrestrische Physik, Otto Hahn Ring 6, D 81739 Munich (Germany); Hermann, S. [MPI Semiconductor Laboratory, Max Planck Institut fuer extraterrestrische Physik, Otto Hahn Ring 6, D 81739 Munich (Germany); Lechner, P. [MPI Semiconductor Laboratory, PNSensor GmbH, Otto Hahn Ring 6, D 81739 Munich (Germany); Richter, R. [MPI Semiconductor Laboratory, Max Planck Institut fuer Physik, Otto Hahn Ring 6, D 81739 Munich (Germany); Schaller, G. [MPI Semiconductor Laboratory, Max Planck Institut fuer extraterrestrische Physik, Otto Hahn Ring 6, D 81739 Munich (Germany); Schopper, F. [MPI Semiconductor Laboratory, Max Planck Institut fuer extraterrestrische Physik, Otto Hahn Ring 6, D 81739 Munich (Germany); Soltau, H. [MPI Semiconductor Laboratory, PNSensor GmbH, Otto Hahn Ring 6, D 81739 Munich (Germany); Strueder, L. [MPI Semiconductor Laboratory, Max Planck Institut fuer extraterrestrische Physik, Otto Hahn Ring 6, D 81739 Munich (Germany); Treis, J. [MPI Semiconductor Laboratory, Max Planck Institut fuer extraterrestrische Physik, Otto Hahn Ring 6, D 81739 Munich (Germany); Woelfl, S. [MPI Semiconductor Laboratory, Max Planck Institut fuer extraterrestrische Physik, Otto Hahn Ring 6, D 81739 Munich (Germany); Zhang, C. [MPI Semiconductor Laboratory, Max Planck Institut fuer extraterrestrische Physik, Otto Hahn Ring 6, D 81739 Munich (Germany)

2007-03-01

The Depleted Field Effect Transistor (DEPFET) detector-amplifier structure forms the basis of a variety of detectors being developed at the MPI semiconductor laboratory. These detectors are foreseen to be used in astronomy and particle physics as well as other fields of science. The detector developments are described together with some intended applications. They comprise the X-ray astronomy missions XEUS and SIMBOL-X as well as the vertex detector of the planned International Linear Collider (ILC). All detectors are produced in the MPI semiconductor laboratory that has a complete silicon technology available.

DEPFET-detectors: New developments

International Nuclear Information System (INIS)

Lutz, G.; Andricek, L.; Eckardt, R.; Haelker, O.; Hermann, S.; Lechner, P.; Richter, R.; Schaller, G.; Schopper, F.; Soltau, H.; Strueder, L.; Treis, J.; Woelfl, S.; Zhang, C.

2007-01-01

The Depleted Field Effect Transistor (DEPFET) detector-amplifier structure forms the basis of a variety of detectors being developed at the MPI semiconductor laboratory. These detectors are foreseen to be used in astronomy and particle physics as well as other fields of science. The detector developments are described together with some intended applications. They comprise the X-ray astronomy missions XEUS and SIMBOL-X as well as the vertex detector of the planned International Linear Collider (ILC). All detectors are produced in the MPI semiconductor laboratory that has a complete silicon technology available

A Gamma Scanner Using a Ge(Li) Semi-Conductor Detector, with the Possibility of Operation in the Anti-Coincidence Mode

Energy Technology Data Exchange (ETDEWEB)

Forsyth, R S; Blackadder, W H

1970-04-15

A fuel element transport flask has been modified as a facility for gamma scanning irradiated fuel elements up to a length of 75 cm. By means of a Ge(Li) semi-conductor detector, satisfactory activity profiles along the specimens have been obtained, permitting the location of individual fuel pellets. An annular plastic detector surrounding the Ge(Li) detector allows operation of the spectrometer in the anti-coincidence mode, and reduction of the Compton continuum by about 50% has been obtained.

A Gamma Scanner Using a Ge(Li) Semi-Conductor Detector, with the Possibility of Operation in the Anti-Coincidence Mode

International Nuclear Information System (INIS)

Forsyth, R.S.; Blackadder, W.H.

1970-04-01

A fuel element transport flask has been modified as a facility for gamma scanning irradiated fuel elements up to a length of 75 cm. By means of a Ge(Li) semi-conductor detector, satisfactory activity profiles along the specimens have been obtained, permitting the location of individual fuel pellets. An annular plastic detector surrounding the Ge(Li) detector allows operation of the spectrometer in the anti-coincidence mode, and reduction of the Compton continuum by about 50% has been obtained

The importance of the time scale in radiation detection exemplified by comparing conventional and avalache semiconductor detectors

Energy Technology Data Exchange (ETDEWEB)

Tove, P A; Cho, Z H; Huth, G C [California Univ., Los Angeles (USA). Lab. of Nuclear Medicine and Radiation Biology

1976-02-01

The profound importance of the time scale of a radiation detection process is discussed in an analysis of limitations in energy resolution and timing, with emphasis on semiconductor detectors used for X-ray detection. The basic event detection time involves stopping of the particle and creating a distribution of free electrons and holes containing all desired information (energy, time position) about the particle or quantum, in a time approximately equal to 10/sup -12/s. The process of extracting this information usually involves a much longer time because the signal is generated in the relatively slow process of charge collection, and further prolongation may be caused by signal processing required to depress noise for improving energy resolution. This is a common situation for conventional semiconductor detectors with external amplifiers where time constants of 10/sup -5/-10/sup -4/s may be optimum, primarily because of amplifier noise. A different situation applies to the avalanche detector where internal amplification helps in suppressing noise without expanding the time scale of detections, resulting in an optimum time of 10/sup -9/-10/sup -8/s. These two cases are illustrated by plotting energy resolution vs. time constant, for different magnitudes of the parallel and series type noise sources. The effects of the inherent energy spread due to statistips and spatial inhomogeneities are also discussed to illustrate the potential of these two approaches for energy and time determination. Two constructional approaches for avalanche detectors are briefly compared.

Photoconductivity and photomagnetic electromotive force in InSb thin samples

International Nuclear Information System (INIS)

Mosanov, O.; Chonanova, O.G.; Annamamedov, A.G.; Padalko, A.G.; Redzhepov, M.

1987-01-01

Photoconductivity and photomagnetic effect in crossed electric and magnetic fields in thin (4 and 20 μm) InSb monocrystalline layers obtained from the melt by oriented crystallization are investigated. Possibility of controlling photomagnetic emf value by variation of the current value and polarity is shown

Analysis and modelling of the performance of a new solid-state detector in nuclear medicine: from Anger- to Semiconductor-detectors

International Nuclear Information System (INIS)

Imbert, L.

2012-01-01

Myocardial single-photon emission computed tomography (SPECT) is considered as the gold standard for the diagnosis of coronary artery disease. Developed in the 1980's with rotating Anger gamma cameras, this technique could be dramatically enhanced by new imaging systems working with semiconductor detectors and which performances are clearly enhanced. Two semiconductor cameras, dedicated to nuclear cardiology and equipped with Cadmium Zinc Telluride detectors, have been recently commercialized: the Discovery NM- 530c (General Electric) and the DSPECT (Spectrum Dynamics). The performances of these CZT cameras were compared: 1) by a comprehensive analysis of phantom and human SPECT images considered as normal and 2) with the parameters commonly recommended for SPECT recording and reconstruction. The results show the superiority of the CZT cameras in terms of detection sensitivity, spatial resolution and contrast-to-noise ratio, compared to conventional Anger cameras. These properties might lead to dramatically reduce acquisition times and/or the injected activities. However, the limits of these new CZT cameras, as well as the mechanism of certain artefacts, remain poorly known. This knowledge could be enhanced by a numerical modeling of the DSPECT camera, and this might also help to optimize acquisition and reconstruction parameters. We developed a simulator where the geometry of the detectors of the DSPECT camera and their energy response were modeled in the GATE platform. In order to validate this simulator, actually recorded data were compared with simulated data through three performance parameters: detection sensitivity, spatial resolution and energy resolution. Results were in agreement between simulated and actually recorded data. This observation validates the DSPECT simulator and opens the door to further studies planed to optimize the recorded and reconstruction processes, especially for complex protocols such as simultaneous dual-radionuclide acquisition

The effects of intense gamma-irradiation on the alpha-particle response of silicon carbide semiconductor radiation detectors

International Nuclear Information System (INIS)

Ruddy, Frank H.; Seidel, John G.

2007-01-01

Silicon Carbide (SiC) semiconductor radiation detectors are being developed for alpha-particle, X-ray and Gamma-ray, and fast-neutron energy spectrometry. SiC detectors have been operated at temperatures up to 306 deg. C and have also been found to be highly resistant to the radiation effects of fast-neutron and charged-particle bombardments. In the present work, the alpha-particle response of a SiC detector based on a Schottky diode design has been carefully monitored as a function of 137 Cs gamma-ray exposure. The changes in response have been found to be negligible for gamma exposures up to and including 5.4 MGy, and irradiations to higher doses are in progress

Physical properties and analytical models of band-to-band tunneling in low-bandgap semiconductors

International Nuclear Information System (INIS)

Shih, Chun-Hsing; Dang Chien, Nguyen

2014-01-01

Low-bandgap semiconductors, such as InAs and InSb, are widely considered to be ideal for use in tunnel field-effect transistors to ensure sufficient on-current boosting at low voltages. This work elucidates the physical and mathematical considerations of applying conventional band-to-band tunneling models in low-bandgap semiconductors, and presents a new analytical alternative for practical use. The high-bandgap tunneling generates most at maximum field region with shortest tunnel path, whereas the low-bandgap generations occur dispersedly because of narrow tunnel barrier. The local electrical field associated with tunneling-electron numbers dominates in low-bandgap materials. This work proposes decoupled electric-field terms in the pre-exponential factor and exponential function of generation-rate expressions. Without fitting, the analytical results and approximated forms exhibit great agreements with the sophisticated forms both in high- and low-bandgap semiconductors. Neither nonlocal nor local field is appropriate to be used in numerical simulations for predicting the tunneling generations in a variety of low- and high-bandgap semiconductors

Simulation of drift dynamics of arbitrary carrier distributions in complex semiconductor detectors

CERN Document Server

De Castro Manzano, Pablo

2014-01-01

An extensible open-source C++ software for the simulation of elec- trons and holes drift in semiconductor detectors of complex geometries has been developed in order to understand transient currents and charge collection efficiencies of arbitrary charge distributions. The simulation is based on Ramo’s theorem formalism to obtain induced currents in the electrodes. Efficient open source C++ numerical libraries are used to ob- tain the electric and weighting field using finite-element methods and to simulate the carrier transport. A graphical user interface is also provided. The tool has already been proved useful to model laser induced transient currents

Contacts to semiconductors

International Nuclear Information System (INIS)

Tove, P.A.

1975-08-01

Contacts to semiconductors play an important role in most semiconductor devices. These devices range from microelectronics to power components, from high-sensitivity light or radiation detectors to light-emitting of microwave-generating components. Silicon is the dominating material but compound semiconductors are increasing in importance. The following survey is an attempt to classify contact properties and the physical mechanisms involved, as well as fabrication methods and methods of investigation. The main interest is in metal-semiconductor type contacts where a few basic concepts are dealt with in some detail. (Auth.)

Radiation effects in semiconductors

CERN Document Server

2011-01-01

There is a need to understand and combat potential radiation damage problems in semiconductor devices and circuits. Written by international experts, this book explains the effects of radiation on semiconductor devices, radiation detectors, and electronic devices and components. These contributors explore emerging applications, detector technologies, circuit design techniques, new materials, and innovative system approaches. The text focuses on how the technology is being used rather than the mathematical foundations behind it. It covers CMOS radiation-tolerant circuit implementations, CMOS pr

Development and characterization of the lead iodide semiconductor detector

International Nuclear Information System (INIS)

Oliveira, Icimone Braga de

2001-01-01

A methodology for purification and growth of PbI 2 crystal as well as for its characterization as a room temperature radiation detector was developed in this work. Commercial salts were purified using the zone refining method and, for the purified material growth, the Bridgman method was used. To calculate the purification efficiency, studies of the decrease impurities concentrations were made in the salts and in three sections of the materials purified, using the neutron activation analysis technique. The results showed that the impurities segregate preferentially in the ingot final section. A significant decrease of the impurities concentration in function of the purification pass number was observed. The grown crystals presented good crystalline quality according to the results of the X-ray diffraction analysis. To evaluate the crystal as a semiconductor detector, measurements of dark leakage current, resistivity and the response of ( 241 Am) alpha particle and ( 241 Am, 57 Co, 133 Ba and 137 Cs) gamma rays were carried out. The radiation response is strongly dependent on the crystals purity. The crystals purified with 500 passes exhibited energy resolution of 10% for 241 Am alpha particle and the gamma rays resolution was compatible with the literature. The photosensibility of the PbI 2 crystal found in the wavelength from 400 to 600 nm range suggests an another application at this crystal as a photodetector to be coupled to scintillators. (author)

Semiconductor radiation detection systems

CERN Document Server

2010-01-01

Covers research in semiconductor detector and integrated circuit design in the context of medical imaging using ionizing radiation. This book explores other applications of semiconductor radiation detection systems in security applications such as luggage scanning, dirty bomb detection and border control.

Detector materials: germanium and silicon

International Nuclear Information System (INIS)

Haller, E.E.

1981-11-01

This article is a summary of a short course lecture given in conjunction with the 1981 Nuclear Science Symposium. The basic physical properties of elemental semiconductors are reviewed. The interaction of energetic radiation with matter is discussed in order to develop a feeling for the appropriate semiconductor detector dimensions. The extremely low net dopant concentrations which are required are derived directly from the detector dimensions. A survey of the more recent techniques which have been developed for the analysis of detector grade semiconductor single crystals is presented

Detection of secondary electrons with pixelated hybrid semiconductor detectors; Sekundaerelektronennachweis mit pixelierten hybriden Halbleiterdetektoren

Energy Technology Data Exchange (ETDEWEB)

Gebert, Ulrike Sonja

2011-09-14

Within the scope of this thesis, secondary electrons were detected with a pixelated semiconductor detector named Timepix. The Timepix detector consists of electronics and a sensor made from a semiconductor material. The connection of sensor and electronics is done for each pixel individually using bump bonds. Electrons with energies above 3 keV can be detected with the sensor. One electron produces a certain amount of electron-hole pairs according to its energy. The charge then drifts along an electric field to the pixel electronics, where it induces an electric signal. Even without a sensor it is possible to detect an electric signal from approximately 1000 electrons directly in the pixel electronics. Two different detector systems to detect secondary electrons using the Timepix detector were investigated during this thesis. First of all, a hybrid photon detector (HPD) was used to detect single photoelectrons. The HPD consists of a vacuum vessel with an entrance window and a cesium iodine photocathode at the inner surface of the window. Photoelectrons are released from the photocathode by incident light and are accelerated in an electric field towards the Timepix detector, where the point of interaction and the arrival time of the electron is determined. With a proximity focusing setup, a time resolution of 12 ns (with an acceleration voltage of 20 kV between photocathode and Timepix detector) was obtained. The HPD examined in this thesis showed a strong dependence of the dark rate form the acceleration voltage and the pressure in the vacuum vessel. At a pressure of few 10{sup -5} mbar and an acceleration voltage of 20 kV, the dark rate was about 800 Hz per mm{sup 2} area of the read out photocathode. One possibility to reduce the dark rate is to identify ion feedback events. With a slightly modified setup it was possible to reduce the dark rate to 0.5 Hz/mm{sup 2}. To achieve this, a new photocathode was mounted in a shorter distance to the detector. The

X-ray diffraction, Raman and photoacoustic studies of InSb nanocrystals

Energy Technology Data Exchange (ETDEWEB)

Ersching, K., E-mail: kleb85@hotmail.com [Departamento de Fisica, Universidade Federal de Santa Catarina, Campus Universitario Trindade, 88040-900 Florianopolis, Santa Catarina (Brazil); Campos, C.E.M.; Lima, J.C. de; Grandi, T.A. [Departamento de Fisica, Universidade Federal de Santa Catarina, Campus Universitario Trindade, 88040-900 Florianopolis, Santa Catarina (Brazil); Souza, S.M. [Departamento de Engenharia Mecanica, Universidade Federal de Santa Catarina, Campus Universitario Trindade, 88040-900 Florianopolis, Santa Catarina (Brazil); Pizani, P.S. [Departamento de Fisica, Universidade Federal de Sao Carlos, 13 565-905 Sao Carlos, SP (Brazil)

2010-08-01

Zinc blend InSb nanocrystals were generated by mechanical alloying and X-ray diffraction, Raman spectroscopy and photoacoustic absorption spectroscopy techniques were used to study its structural, optical and thermal properties. Annealed nanocrystals were also studied. Residual amorphous and minority crystalline (Sb and In{sub 2}O{sub 3}) phases were also observed for mechanical alloyed and thermal annealed samples, respectively. The structural parameters, phase fractions, average crystallite sizes and microstrains of all crystalline phases found in the samples were obtained from Rietveld analyses of their X-ray diffraction patterns. Raman results for both as-milled and annealed samples show the Raman active LO and TO modes of the zinc blend InSb phase and Sb-rich regions. The photoacoustic results of both samples were satisfactorily explained by thermal bending heat transfer mechanism and an increase on effective thermal diffusivity coefficient was observed after annealing.

Synthesis of InSb Nanowire Architectures - Building Blocks for Majorana Devices

Science.gov (United States)

Car, Diana

Breakthroughs in material development are playing a major role in the emerging field of topological quantum computation with Majorana Zero Modes (MZMs). Due to the strong spin-orbit interaction and large Landé g-factor InSb nanowires are one of the most promising one dimensional material systems in which to detect MZMs. The next generation of Majorana experiments should move beyond zero-mode detection and demonstrate the non-Abelian nature of MZMs by braiding. To achieve this goal advanced material platforms are needed: low-disorder, single-crystalline, planar networks of nanowires with high spin-orbit energy. In this talk I will discuss the formation and electronic properties of InSb nanowire networks. The bottom-up synthesis method we have developed is generic and can be employed to synthesize interconnected nanowire architectures of group III-V, II-VI and IV materials as long as they grow along a direction.

General specifications for silicon semiconductors for use in radiation dosimetry

International Nuclear Information System (INIS)

Rikner, G.; Grusell, E.

1987-01-01

Silicon semiconductor detectors used in radiation dosimetry have different properties, just as e.g. ionisation chambers, affecting the interaction of radiation with matter in the vicinity of the sensitive volume of the detector, e.g. wall materials, and also the collection of the charges liberated in the detector by the radiation. The charge collection depends on impurities, lattice imperfections and other properties of the semiconductor crystal. In this paper the relevant parameters of a silicon semiconductor detector intended for dosimetry are reviewed. The influence of doping material, doping level, various effects of radiation damage, mechanical construction, detector size, statistical noise and connection to the electrometer are discussed. (author)

Electrical limitations to energy resolution in semiconductor particle detectors; Limitations electriques du pouvoir de resolution en energie des detecteurs a semi-conducteurs; Ehlektricheskie ogranicheniya razreshayushchej sposobnosti po ehnergii v poluprovodnikovykh detektorakh chastits; Limitaciones electricas en la resolucion energetica de detectores de particulas a base de semiconductores

Energy Technology Data Exchange (ETDEWEB)

Hansen, W L; Goulding, F S [Lawrence Radiation Laboratory, University of California, Berkeley, CA (United States)

1962-04-15

Based on the assumption that the noise contribution of a semiconductor detector is due solely to its bulk properties, equations are presented which indicate the theoretical limits of noise in detectoramplifier combinations. These equations show that an optimum amplifier time-constant and detector bias voltage exist for which condition the minimum noise is independent of the semiconductor resistivity. The optimum performance of a detector-amplifier system is shown to depend only upon detector area, input capacity (less detector capacity), semiconductor minority carrier lifetime and the transconductance of the amplifier input tube. A new detector structure which includes a guard-ring electrode as an integral part of the detector structure is described which has the effect of largely eliminating noise due to surface leakage. Experimental results for detector leakage and energy resolution which agree well with theory are presented. The theoretical limit of noise, expressed as full width at half maximum, is from 7 to 10 keV for 1-cm{sup 2} p-type silicon detectors at 25{sup o}C. (author) [French] Partant de l'hypothese que le bruit imputable au detecteur a semi-conducteur est du exclusivement aux proprietes fondamentales du semi-conducteur, les auteurs etablissent des equations donnant les limites theoriques du bruit dans les combinaisons detecteur-amplificateur. Ces equations montrent qu'il existe une constante de temps optimum de l'amplificateur et une tension de polarisation du detecteur, pour lesquelles le bruit minimum est independant de la resistivite du semi-conducteur. Les auteurs prouvent que l'optimum de fonctionnement d'un ensemble detecteur-amplificateur ne depend que de la surface du detecteur, de la capacite a l'entree (deduction faite de la capacite du detecteur), du porteur minoritaire du semi-conducteur, de la duree de vie et de la transconductance du tube d'entree de l'amplificateur. Ils decrivent un modele nouveau de detecteur qui comprend une

Quasiparticle semiconductor band structures including spin-orbit interactions.

Science.gov (United States)

Malone, Brad D; Cohen, Marvin L

2013-03-13

We present first-principles calculations of the quasiparticle band structure of the group IV materials Si and Ge and the group III-V compound semiconductors AlP, AlAs, AlSb, InP, InAs, InSb, GaP, GaAs and GaSb. Calculations are performed using the plane wave pseudopotential method and the 'one-shot' GW method, i.e. G(0)W(0). Quasiparticle band structures, augmented with the effects of spin-orbit, are obtained via a Wannier interpolation of the obtained quasiparticle energies and calculated spin-orbit matrix. Our calculations explicitly treat the shallow semicore states of In and Ga, which are known to be important in the description of the electronic properties, as valence states in the quasiparticle calculation. Our calculated quasiparticle energies, combining both the ab initio evaluation of the electron self-energy and the vector part of the pseudopotential representing the spin-orbit effects, are in generally very good agreement with experimental values. These calculations illustrate the predictive power of the methodology as applied to group IV and III-V semiconductors.

First principles simulation of amorphous InSb

Science.gov (United States)

Los, Jan H.; Kühne, Thomas D.; Gabardi, Silvia; Bernasconi, Marco

2013-05-01

Ab initio molecular dynamics simulations based on density functional theory have been performed to generate a model of amorphous InSb by quenching from the melt. The resulting network is mostly tetrahedral with a minor fraction (10%) of atoms in a fivefold coordination. The structural properties are in good agreement with available x-ray diffraction and extended x-ray-absorption fine structure data and confirm the proposed presence of a sizable fraction of homopolar In-In and Sb-Sb bonds whose concentration in our model amounts to about 20% of the total number of bonds.

Semiconductor crystal high resolution imager

Science.gov (United States)

Levin, Craig S. (Inventor); Matteson, James (Inventor)

2011-01-01

A radiation imaging device (10). The radiation image device (10) comprises a subject radiation station (12) producing photon emissions (14), and at least one semiconductor crystal detector (16) arranged in an edge-on orientation with respect to the emitted photons (14) to directly receive the emitted photons (14) and produce a signal. The semiconductor crystal detector (16) comprises at least one anode and at least one cathode that produces the signal in response to the emitted photons (14).

Device Physics of Narrow Gap Semiconductors

CERN Document Server

Chu, Junhao

2010-01-01

Narrow gap semiconductors obey the general rules of semiconductor science, but often exhibit extreme features of these rules because of the same properties that produce their narrow gaps. Consequently these materials provide sensitive tests of theory, and the opportunity for the design of innovative devices. Narrow gap semiconductors are the most important materials for the preparation of advanced modern infrared systems. Device Physics of Narrow Gap Semiconductors offers descriptions of the materials science and device physics of these unique materials. Topics covered include impurities and defects, recombination mechanisms, surface and interface properties, and the properties of low dimensional systems for infrared applications. This book will help readers to understand not only the semiconductor physics and materials science, but also how they relate to advanced opto-electronic devices. The last chapter applies the understanding of device physics to photoconductive detectors, photovoltaic infrared detector...

Fast front-end electronics for semiconductor tracking detectors: Trends and perspectives

Energy Technology Data Exchange (ETDEWEB)

Rivetti, Angelo

2014-11-21

In the past few years, extensive research efforts pursued by both the industry and the academia have lead to major improvements in the performance of Analog to Digital Converters (ADCs) and Time to Digital Converters (TDCs). ADCs achieving 8–10 bit resolution, 50–100 MHz conversion frequency and less than 1 mW power consumption are the today's standard, while TDCs have reached sub-picosecond time resolution. These results have been made possible by architectural upgrades combined with the use of ultra deep submicron CMOS technologies with minimum feature size of 130 nm or smaller. Front-end ASICs in which a prompt digitization is followed by signal conditioning in the digital domain can now be envisaged also within the tight power budget typically available in high density tracking systems. Furthermore, tracking detectors embedding high resolution timing capabilities are gaining interest. In the paper, ADC's and TDC's developments which are of particular relevance for the design front-end electronics for semiconductor trackers are discussed along with the benefits and challenges of exploiting such high performance building blocks in implementing the next generation of ASICs for high granularity particle detectors.

Detector trends

International Nuclear Information System (INIS)

Charpak, G.

1986-01-01

The author describes briefly the development of detectors for high energy physics experiments. Especially considered are semiconductor microstrip detectors, drift tubes, holographic bubble chambers, scintillating fiber optics, and calorimeters. (HSI).

The dispersion of the refractive index of semiconductors at the edge of their intrinsic absorption

International Nuclear Information System (INIS)

Kudykina, T.A.; Lisitsa, M.P.

1986-01-01

The authors discuss the frequency dependence of the refractive index of various semiconductors near the edge of their intrinsic absorption in both theory and experiment. Beginning with random phase approximation, equations are presented which include all possible excitations and result in values for the width of the forbidden energy gap, the oscillator strengths, and spectral functions for the absorption coefficients. Data are presented for the following materials: CdS, CdSe, CdTe, GaSb, InP, GaAs, ZnTe, PbTe, InAs, InSb, and ZnSe

PC based analysis of gamma ray spectra generated by semiconductor detectors

International Nuclear Information System (INIS)

Abani, M.C.; Madan, V.K.

1993-01-01

This report describes a spectrum analysis method and computer program for analysis of gamma spectra obtained by using semiconductor detectors and multichannel analysers. The analysis steps incorporated are smoothing, peak location using signal processing method of convolution, selectable background subtraction viz linear, polynomial and step like, peak fitting both for singlets and doublets using Mukoyama's method for evaluation of full width at half maximum and area evaluation including errors in its evaluation. The program also provides a facility for energy calibration. Typical results of analysis for singlets and doublets are included. This report is based on Wilson's report which has been modified and extended. The program is written in BASIC and its listing is included in the appendices. (author). 20 refs., 2 figs., 2 tabs

Response function of semiconductor detectors, Ge and Si(Li); Funcao resposta de detectores semicondutores, Ge e Si(Li)

Energy Technology Data Exchange (ETDEWEB)

Zevallos Chavez, Juan Yury

2003-07-01

The Response Function (RF) for Ge and Si(Li) semiconductor detectors was obtained. The RF was calculated for five detectors, four Hp Ge with active volumes of 89 cm{sup 3} , 50 cm{sup 3} , 8 cm{sup 3} and 5 cm{sup 3}, and one Si(Li) with 0.143 cm{sup 3} of active volume. The interval of energy studied ranged from 6 keV up to 1.5 MeV. Two kinds of studies were done in this work. The first one was the RF dependence with the detection geometry. Here the calculation of the RF for a geometry named as simple and an extrapolation of that RF, were both done. The extrapolation process analyzed both, spectra obtained with a shielding geometry and spectra where the source-detector distance was modified. The second one was the RF dependence with the detection electronics. This study was done varying the shaping time of the pulse in the detection electronics. The purpose was to verify the effect of the ballistic deficit in the resolution of the detector. This effect was not observed. The RF components that describe the region of the total absorption of the energy of the incident photons, and the partial absorption of this energy, were both treated. In particular, empirical functions were proposed for the treatment of both, the multiple scattering originated in the detector (crystal), and the photon scattering originated in materials of the neighborhood of the crystal. Another study involving Monte Carlo simulations was also done in order to comprehend the photon scattering structures produced in an iron shield. A deconvolution method is suggested, for spectra related to scattered radiation in order to assess the dose delivered to the scatterer. (author)

Infrared detectors and focal plane arrays II; Proceedings of the Meeting, Orlando, FL, Apr. 23, 24, 1992

Science.gov (United States)

Dereniak, Eustace L.; Sampson, Robert E.

The present conference discusses Schottky-barrier IR image sensors, SWIR and MWIR Schottky-barrier imagers, a 640 x 640 PtSi, models of nonlinearities in focal plane arrays, retinal function relative to IRT focal plane arrays, a solid-state pyroelectric imager, and electrolyte electroreflectance spectroscopies for the ion-implanted HgCdTe with thermal annealing. Also discussed are HgCdTe hybrid focal plane arrays for thermoelectrically cooled applications, a novel IR detector plasma-edge detector, and IR detector circuits using monolithic CMOS amps with InSb detectors. (No individual items are abstracted in this volume)

Inverse simulated annealing: Improvements and application to amorphous InSb

OpenAIRE

Los, Jan H.; Gabardi, Silvia; Bernasconi, Marco; Kühne, Thomas D.

2014-01-01

An improved inverse simulated annealing method is presented to determine the structure of complex disordered systems from first principles in agreement with available experimental data or desired predetermined target properties. The effectiveness of this method is demonstrated by revisiting the structure of amorphous InSb. The resulting network is mostly tetrahedral and in excellent agreement with available experimental data.

Valence Band Structure of InAs1-xBix and InSb1-xBix Alloy Semiconductors Calculated Using Valence Band Anticrossing Model

Directory of Open Access Journals (Sweden)

D. P. Samajdar

2014-01-01

Full Text Available The valence band anticrossing model has been used to calculate the heavy/light hole and spin-orbit split-off energies in InAs1-xBix and InSb1-xBix alloy systems. It is found that both the heavy/light hole, and spin-orbit split E+ levels move upwards in energy with an increase in Bi content in the alloy, whereas the split E− energy for the holes shows a reverse trend. The model is also used to calculate the reduction of band gap energy with an increase in Bi mole fraction. The calculated values of band gap variation agree well with the available experimental data.

The basics of experimental determination of the Fano factor in intrinsic semiconductors

International Nuclear Information System (INIS)

Samedov, Victor-V.

2013-06-01

Intrinsic semiconductors such as High Purity Germanium Detectors are exceptional X-ray and gamma-ray detectors because of their large sizes and small band gap. They are used for fundamental scientific researches, nuclear material safeguards and security, environmental protection, and human health and safety. The fundamental limit of the energy resolution of a semiconductor detector is determined by variance in the number of electron-hole pairs produced by X-rays in detector volume. The principal characteristic of material for using as semiconductor detector is the Fano factor that determines the fluctuation in the number of electron-hole pairs. Now, all existing methods of experimental determination of the Fano factor in semiconductors are based on the subtraction of electronic noise from the signal variance. In this work, I propose the method of experimental determination of the Fano factor in a planar semiconductor detector based on dependences of the mean amplitude and the energy resolution on the electric field. It was shown that inverse electric field expansion of these dependences allow determining the Fano factor, electron mobility lifetime product, and relative variance of electron lifetime due to inhomogeneous charge transport in semiconductor material. The important advantage of the proposed method is independence on detector electronic noise. (authors)

Thermodynamics and phase equilibria of ternary systems relevant to contact materials for compound semiconductors

International Nuclear Information System (INIS)

Ipser, H.; Richter, K.; Micke, K.

1997-01-01

In order to investigate the stability of ohmic contacts to compound semiconductors, it is necessary to know the phase equilibria in the corresponding multi-component systems. We are currently studying the phase equilibria and thermophysical properties of several ternary systems which are of interest in view of the use of nickel, palladium and platinum as contact materials for GaSb and InSb compound semiconductors: Ga-Ni-Sb, In-Ni-Sb, Ga-Pd-Sb and Ga-Pt-Sb. Phase equilibria are investigated by thermal analyses, X-ray powder diffraction methods as well as electron microprobe analysis. Thermodynamic properties are derived from vapour pressure measurements using an isopiestic method. It is planned to combine all information on phase equilibria and thermochemistry for the ternary and the limiting binary systems to perform an optimization of the ternary systems by computer calculations using standard software. (author)

Standard-free electron-probe microanalysis of thin films of HTSC-oxide and semiconductors (h<1μm)

International Nuclear Information System (INIS)

Kvardakov, A.M.; Mikhajlova, A.Ya.; San'gin, V.P.; Lazarev, V.B.

1993-01-01

A simplified variant of the standard-free electron-probe microanalysis is elaborated to carry out rapid analysis of chemical composition of >1μm thickness thin films of high-temperature superconductor oxides and semiconductors on alien substrates. The suggested technique has increased the efficiency of search for optimal conditions of preparation YBa 2 Cu 3 O x thin films existing in magnetron and InSb ion-beam techniques of spraying on SrTiO 3 and α-Al 2 O 3 monocrystal base substrates

Semiconductor sensors

International Nuclear Information System (INIS)

Hartmann, Frank

2011-01-01

Semiconductor sensors have been around since the 1950s and today, every high energy physics experiment has one in its repertoire. In Lepton as well as Hadron colliders, silicon vertex and tracking detectors led to the most amazing physics and will continue doing so in the future. This contribution tries to depict the history of these devices exemplarily without being able to honor all important developments and installations. The current understanding of radiation damage mechanisms and recent R and D topics demonstrating the future challenges and possible technical solutions for the SLHC detectors are presented. Consequently semiconductor sensor candidates for an LHC upgrade and a future linear collider are also briefly introduced. The work presented here is a collage of the work of many individual silicon experts spread over several collaborations across the world.

Amplifier channel for a fission fragment semiconductor detector

International Nuclear Information System (INIS)

Tyurin, G.P.

1981-01-01

To compensate the decrease of the transformation coefficient of fission fragment semiconductor detector (SCD) developed is a special amplification channel with controlled transfer coefficient. The block diagram of the channel is presented, the main functional units of which are as follows: preamplifying head with charge-sensitive and timing preamplifiers, linear amplifier and the circuit of spectrum position stabilization, which includes a differential discriminator, integrator and reference signal generator. The amplification channel is made in the CAMAC standard and has the following specifications: dinamical input capacitance of charge-sensitive amplifier c=10000 n PHI, signal amplitude at output of the linear amplifier at energy of fission fragments of 120 MeV has negative polarity and is equal to 5 V. Pulse amplitude change at SCD sensitivity decrease to 50% constitutes not more than 1%. Timing preamplifier has the gain factor at voltage of K=80 at front duration of 3.5 nc. Time resolution of the amplification channel is not worse than 1 nc. Dimensions of preamplifying head are 40x40x15 mm. The amplification channel permitted to use SCD for long-term measurements of fission fragment spectra [ru

Simulation and Performance Test Technology Development for Semiconductor Radiation Detection Instrument Fabrication

International Nuclear Information System (INIS)

Kim, Jong Kyung; Lee, W. G.; Kim, S. Y.; Shin, C. H.; Kim, K. O.; Park, J. M.; Jang, D. Y.; Kang, J. S.

2010-06-01

- Analysis on the Absorbed Dose and Electron Generation by Using MCNPX Code - Analysis on the Change of Measured Energy Spectrum As a Function of Bias Voltage Applied in Semiconductor Detector - Comparison of Monte Carlo Simulation Considering the Charge Collection Efficiency and Experimental Result - Development of Semiconductor Sensor Design Code Based on the Graphic User Interface - Analysis on Depth Profile of Ion-implanted Semiconductor Wafer Surface and Naturally Generated SiO2 Insulation Layer Using Auger Electron Spectroscopy - Measurement of AFM Images and Roughness to Abalyze Surface of Semiconductor Wafer with respect to Annealing and Cleaning Process - Measurement of Physical Properties for Semiconductor Detector Surface after CZT Passivation Process - Evaluation of Crystal Structure and Specific Resistance of CZT - Measurement/Analysis on Band Structure of CZT Crystal - Evaluation of Neutron Convertor Layer with respect to Change in Temperature - Measurement/Evaluation of physical characteristics for lattice parameter, specific resistance, and band structure of CZT crystal - Measurement/Evaluation of lattice transition of SiC semiconductor detector after radiation irradiation - Measurement/Evaluation of performance of semiconductor detector with respect to exposure in high temperature environment

Low frequency noise in semiconductor detectors

International Nuclear Information System (INIS)

Stojanovic, M.; Marjanovic, N.

1998-01-01

Noise characteristics of surface-barrier detectors based on Au contacts on n-Si were measured and analyzed. The metal layers were deposited by evaporation to 40-100 nm thickness. Standard surface-barrier detectors based on Au/Si structures are known to have favorable characteristics, but they tend to degrade with aging and under severe working conditions. Degradation is particularly related to the increase in noise level, leakage current and the reduction of detector efficiency and resolution. Therefore, practical applications of surface-barrier detectors demand their constant upgrading. Improvements of detector properties are concentrated mainly on the front surface and front (rectifying) contact. The aim was to improve the noise characteristics of the surface-barrier structures and retain the favorable detector properties of the Au/Si system. (authors)

Advanced far infrared detectors

International Nuclear Information System (INIS)

Haller, E.E.

1993-05-01

Recent advances in photoconductive and bolometric semiconductor detectors for wavelength 1 mm > λ > 50 μm are reviewed. Progress in detector performance in this photon energy range has been stimulated by new and stringent requirements for ground based, high altitude and space-borne telescopes for astronomical and astrophysical observations. The paper consists of chapters dealing with the various types of detectors: Be and Ga doped Ge photoconductors, stressed Ge:Ga devices and neutron transmutation doped Ge thermistors. Advances in the understanding of basic detector physics and the introduction of modern semiconductor device technology have led to predictable and reliable fabrication techniques. Integration of detectors into functional arrays has become feasible and is vigorously pursued by groups worldwide

Behaviour of semiconductor nuclear-particle detectors; Comportement des semi-conducteurs comme detecteurs de particules nucleaires; Povedenie detektorov yadernykh chastits na poluprovodnikakh; Propiedades de los detectores de particulas nucleares a base de semiconductores

Energy Technology Data Exchange (ETDEWEB)

Walter, F J; Dabbs, J W.T.; Roberts, L D [Oak Ridge National Laboratory, Oak Ridge, TN (United States)

1962-04-15

Experimental and theoretical studies of the behaviour of semiconductor nuclear-particle detectors have been carried out over the temperature range of 0.2{sup o}K to 300{sup o}K. A simple theoretical model for the detector behaviour, which is found to describe the observed behaviour over a wide range of parameters, is presented. The importance of semiconductor purity and bias voltage in connection with pulse height, pulse rise-time and detector area is discussed. Empirical studies of noise and energy resolution indicate that for alpha particles the smallest observed peak-widths are substantially larger than those expected on the basis of electrical noise from the detector and amplifier. Equivalent noise values of {<=} 3 keV full-width at half maximum (FWHM) have been found for a 40-mm{sup 2} silicon surface-barrier detector at 77{sup o}K. Semiconductor detectors exhibit a ''pulse-height defect'' for fission fragments. There is evidence that this defect is not caused by a ''dead layer''. If electric fields which are insufficient to insure complete ''collection'' are responsible for the defect, the necessary minimum field (at the surface) is > 3 x 10{sup 4} V/cm for fission fragments, as compared to the value of 2 x 10{sup 3} V/cm which is found necessary in the case of alpha particles in Ge and Si. Detailed considerations regarding pulse rise-time at the amplifier have shown that in high-resistivity material both the ''dielectric'' relaxation time and the resistance associated with the undepleted base material can play an important role. A quantative description of the effect of detector and amplifier parameters on the shapes and rise-times associated with the pulse are presented. The advantages and problems associated with the use of surface-barrier detectors in several unique low-temperature nuclear-alignment experiments are discussed. These experiments involved fission-fragment angular distributions and resolution of alpha-fine structure with long-term stability

Determination and stabilization of the altitude of an aircraft in space using semi-conductor detectors

International Nuclear Information System (INIS)

Gilly, L.

1967-01-01

The device studied in this report can be used as altimeter or as altitude stabilizer (B.F. number PV 100-107, March 23, 1967). It includes essentially a 'surface barrier' semiconductor detector which counts alpha particles of a radioactive source. Two sources are used corresponding to two possible utilizations of the device. This report describes experiences made in laboratory which comprises electronic tests and a physic study. Systematic analysis of experimental errors is made comparatively with aneroid altimeters. An industrial device project is given. (author) [fr

Increasing Mn substitution in magnetic semiconductors through controlled ambient annealing processes

Energy Technology Data Exchange (ETDEWEB)

Hollingsworth, J. [Materials Science Program, Department of Mechanical and Aerospace Engineering, UC San Diego, La Jolla, CA 92093-0411 (United States); Bandaru, P.R. [Materials Science Program, Department of Mechanical and Aerospace Engineering, UC San Diego, La Jolla, CA 92093-0411 (United States)], E-mail: pbandaru@ucsd.edu

2008-06-25

We report on a controlled ambient annealing technique aimed at increasing the amount of Mn incorporation in III-V semiconductors. The aim is to reduce the number of hole carrier and magnetic element compensating entities, such as Mn interstitials and anti-site defects, to increase the magnetic Curie temperature. The idea is (a) to increase the number of Group III vacancies through annealing in Group V vapor rich conditions and (b) judicious use of crystal field theory to reduce/stabilize Mn interstitials. Our experimental results constitute the highest reportedT{sub c} ({approx}130 K) in Mn doped InSb and Mn doped InP. The possibility of ferrimagnetism in Mn and Cr incorporated GaAs, was noted.

Semiconductor radiation detectors: device physics

National Research Council Canada - National Science Library

Lutz, Gerhard

1999-01-01

..., including nuclear physics, elementary particle physics, optical and x-ray astronomy, medicine, and materials testing - and the number of applications is growing continually. Closely related, and initiated by the application of semiconductors, is the development of low-noise low-power integrated electronics for signal readout. The success of semicond...

Decoherence of spin states induced by Rashba coupling for an electron confined to a semiconductor quantum dot in the presence of a magnetic field

Science.gov (United States)

Poszwa, A.

2018-05-01

We investigate quantum decoherence of spin states caused by Rashba spin-orbit (SO) coupling for an electron confined to a planar quantum dot (QD) in the presence of a magnetic field (B). The Schrödinger equation has been solved in a frame of second-order perturbation theory. The relationship between the von Neumann (vN) entropy and the spin polarization is obtained. The relation is explicitly demonstrated for the InSb semiconductor QD.

Spatiotemporal Monte Carlo transport methods in x-ray semiconductor detectors: application to pulse-height spectroscopy in a-Se.

Science.gov (United States)

Fang, Yuan; Badal, Andreu; Allec, Nicholas; Karim, Karim S; Badano, Aldo

2012-01-01

The authors describe a detailed Monte Carlo (MC) method for the coupled transport of ionizing particles and charge carriers in amorphous selenium (a-Se) semiconductor x-ray detectors, and model the effect of statistical variations on the detected signal. A detailed transport code was developed for modeling the signal formation process in semiconductor x-ray detectors. The charge transport routines include three-dimensional spatial and temporal models of electron-hole pair transport taking into account recombination and trapping. Many electron-hole pairs are created simultaneously in bursts from energy deposition events. Carrier transport processes include drift due to external field and Coulombic interactions, and diffusion due to Brownian motion. Pulse-height spectra (PHS) have been simulated with different transport conditions for a range of monoenergetic incident x-ray energies and mammography radiation beam qualities. Two methods for calculating Swank factors from simulated PHS are shown, one using the entire PHS distribution, and the other using the photopeak. The latter ignores contributions from Compton scattering and K-fluorescence. Comparisons differ by approximately 2% between experimental measurements and simulations. The a-Se x-ray detector PHS responses simulated in this work include three-dimensional spatial and temporal transport of electron-hole pairs. These PHS were used to calculate the Swank factor and compare it with experimental measurements. The Swank factor was shown to be a function of x-ray energy and applied electric field. Trapping and recombination models are all shown to affect the Swank factor.

The physics and technology of Si and Ge detectors

International Nuclear Information System (INIS)

Stab, Lucien

Semiconductor physics fundamentals are recalled (energy levels in crystalline solids, level population, charge carrier transport) as an introduction to studying NP junction at thermal equilibrium, or reversly biased. The fabrication of semiconductor detectors including surface barrier detectors, implanted junctions, and lithium-drifted semiconductors is discussed [fr

Short-range order in InSb amorphized under ion bombardment

International Nuclear Information System (INIS)

Pavlov, P.V.; Tetel'baum, D.I.; Gerasimov, A.I.

1979-01-01

The investigation of short-range order is carried out in polycrystal InSb films, irradiated with Ne + ions with E=150 keV and with the 2x10 15 ion/cm 2 dose. The data are obtained testifying to the film amorphization, the cause of which is the defect storage but not the local melting. Stability of the obtained amorphous phase at the room temperature is noted

Effect of InSb/In0.9Al0.1Sb superlattice buffer layer on the structural and electronic properties of InSb films

Science.gov (United States)

Zhao, Xiaomeng; Zhang, Yang; Guan, Min; Cui, Lijie; Wang, Baoqiang; Zhu, Zhanping; Zeng, Yiping

2017-07-01

The effect of InSb/In0.9Al0.1Sb buffer layers on InSb thin films grown on GaAs (0 0 1) substrate by molecular beam epitaxy (MBE) is investigated. The crystal quality and the surface morphology of InSb are characterized by XRD and AFM. The carrier transport property is researched through variable temperature hall test. The sharp interface between InSb/In0.9Al0.1Sb is demonstrated important for the high quality InSb thin film. We try different superlattice buffer layers by changing ratios, 2-0.5, thickness, 300-450 nm, and periods, 20-50. According to the function of the dislocation density to the absolute temperature below 150 K with different periods of SL buffers, we can find that the number of periods of superlattice is a major factor to decrease the density of threading dislocations. With the 50 periods SL buffer layer, the electron mobility of InSb at the room temperature and liquid nitrogen cooling temperature is ∼63,000 and ∼4600 cm2/V s, respectively. We deduce that the interface in the SL structure works as a filter layer to prevent the dislocation propagating to the upper InSb thin films.

Semiconductor drift chamber: an application of a novel charge transport scheme

International Nuclear Information System (INIS)

Gatti, E.; Rehak, P.

1983-08-01

The purpose of this paper is to describe a novel charge tranport scheme in semiconductors in which the field responsible for the charge transport is independent of the depletion field. The application of the novel charge transport scheme leads to the following new semiconductor detectors: (1) Semiconductor Draft Chamber; (2) Ultra low capacitance - large semiconductor x-ray spectrometers and photodiodes; and (3) Fully depleted thick CCD. Special attention is paid to the concept of the Semiconductor Draft Chamber as a position sensing detector for high energy charged particles. Position resolution limiting factors are considered, and the values of the resolutions are given

Electron Band Alignment at Interfaces of Semiconductors with Insulating Oxides: An Internal Photoemission Study

Directory of Open Access Journals (Sweden)

Valeri V. Afanas'ev

2014-01-01

Full Text Available Evolution of the electron energy band alignment at interfaces between different semiconductors and wide-gap oxide insulators is examined using the internal photoemission spectroscopy, which is based on observations of optically-induced electron (or hole transitions across the semiconductor/insulator barrier. Interfaces of various semiconductors ranging from the conventional silicon to the high-mobility Ge-based (Ge, Si1-xGex, Ge1-xSnx and AIIIBV group (GaAs, InxGa1-xAs, InAs, GaP, InP, GaSb, InSb materials were studied revealing several general trends in the evolution of band offsets. It is found that in the oxides of metals with cation radii larger than ≈0.7 Å, the oxide valence band top remains nearly at the same energy (±0.2 eV irrespective of the cation sort. Using this result, it becomes possible to predict the interface band alignment between oxides and semiconductors as well as between dissimilar insulating oxides on the basis of the oxide bandgap width which are also affected by crystallization. By contrast, oxides of light elements, for example, Be, Mg, Al, Si, and Sc exhibit significant shifts of the valence band top. General trends in band lineup variations caused by a change in the composition of semiconductor photoemission material are also revealed.

Development of the mercury iodide semiconductor crystal for application as a radiation detector

International Nuclear Information System (INIS)

Martins, Joao Francisco Trencher

2011-01-01

In this work, the establishment of a technique for HgI growth and preparation of crystals, for use as room temperature radiation semiconductor detectors is described. Three methods of crystal growth were studied while developing this work: physical vapor transport (PVT); saturated solution of HgI 2 , using two different solvents; (a) dimethyl sulfoxide (DMSO) and (b) acetone, and the Bridgman method. In order to evaluate the obtained crystals by the three methods, systematic measurements were carried out for determining the stoichiometry, structure, orientation, surface morphology and impurity of the crystal. The influence of these physical chemical properties on the crystals development was studied, evaluating their performance as radiation detectors. The X-ray diffractograms indicated that the crystals were, preferentially, oriented in the (001) e (101) directions with tetragonal structure for all crystals. Nevertheless, morphology with a smaller deformation level was observed for the crystal obtained by the PVT technique, comparing to other methods. Uniformity on the surface layer of the PVT crystal was detected, while clear incrustations of elements distinct from the crystal could be viewed on the DMSO crystal surface. The best results as to radiation response were found for the crystal grown by physical vapor transport. Significant improvement in the HgI z2 radiation detector performance was achieved for purer crystals, growing the crystal twice by PVT technique. (author)

Biggest semiconductor installed

CERN Multimedia

2008-01-01

Scientists and technicians at the European Laboratory for Particle Physics, commonly known by its French acronym CERN (Centre Europen pour la Recherche Nuclaire), have completed the installation of the largest semiconductor silicon detector.

Thermal noise in mid-infrared broadband upconversion detectors

DEFF Research Database (Denmark)

Barh, Ajanta; Tidemand-Lichtenberg, Peter; Pedersen, Christian

2018-01-01

Low noise detection with state-of-the-art mid-infrared (MIR) detectors (e.g., PbS, PbSe, InSb, HgCdTe) is a primary challenge owing to the intrinsic thermal background radiation of the low bandgap detector material itself. However, researchers have employed frequency upconversion based detectors...... of the noise-equivalent power of an UCD system. In this article, we rigorously analyze the optical power generated by frequency upconversion of the intrinsic black-body radiation in the nonlinear material itself due to the crystals residual emissivity, i.e. absorption. The thermal radiation is particularly...... prominent at the optical absorption edge of the nonlinear material even at room temperature. We consider a conventional periodically poled lithium niobate (PPLN) based MIR-UCD for the investigation. The UCD is designed to cover a broad spectral range, overlapping with the entire absorption edge of the PPLN...

Operation of CdZnTe Semiconductor Detectors in Liquid Scintillator for the COBRA Experiment

International Nuclear Information System (INIS)

Oldorf, Christian

2015-08-01

COBRA, the Cadmium-Zinc-Telluride O-neutrino double-Beta Research Apparatus, is an experiment aiming for the measurement of the neutrinoless double beta decay with several isotopes, in particular 116 Cd, 106 Cd and 130 Te. A highly granular large scale experiment with about 400 kg of CdZnTe semiconductor detectors is currently under development. To provide evidence for the neutrinoless double beta decay of 116 Cd, a background rate in the order of 10 -3 counts/keV/kg/a is needed to achieve the required half-life sensitivity of at least 2 . 10 26 years. To reach this target, the detectors have to be operated in a highly pure environment, shielded from external radiation. Liquid scintillator is a promising candidate as a circum fluent replacement for the currently used lacquer. Next to the function as highly pure passivation material, liquid scintillator also acts as a neutron shield and active veto for external gammas. Within this thesis, the design, construction and assembly of a test set-up is described. The operation of four CdZnTe detectors after several years of storage in liquid scintillator is demonstrated. Next to extensive material compatibility tests prior to the assembly, the commissioning of the set-up and the characterization of the detectors are shown. Finally, results concerning the background reduction capability of liquid scintillator and the detection of cosmic muons are presented and compared to a Monte Carlo simulation.

Design and operation of a 2-D thin-film semiconductor neutron detector array for use as a beamport monitor

International Nuclear Information System (INIS)

Unruh, Troy C.; Bellinger, Steven L.; Huddleston, David E.; McNeil, Walter J.; Patterson, Eric; Sobering, Tim J.; McGregor, Douglas S.

2009-01-01

Silicon-based diodes coated with a thin film of neutron reactive materials have been shown to produce excellent low-efficiency neutron detectors. This work employs the same technology, but groups 25 equally sized and spaced diodes on a single 29 mm by 29 mm substrate. A 5x5 array was fabricated and coated with a thin film of 6 LiF for use as a low-efficiency neutron beam monitor. The 5x5 neutron detector array is coupled to an array of amplifiers, allowing the response to be interpreted using a LabVIEW FPGA. The 5x5 array has been characterized in a diffracted neutron beam. This work is a part of on-going research to develop various designs of high- and low-efficiency semiconductor neutron detectors.

Infrared detectors

CERN Document Server

Rogalski, Antonio

2010-01-01

This second edition is fully revised and reorganized, with new chapters concerning third generation and quantum dot detectors, THz detectors, cantilever and antenna coupled detectors, and information on radiometry and IR optics materials. Part IV concerning focal plane arrays is significantly expanded. This book, resembling an encyclopedia of IR detectors, is well illustrated and contains many original references … a really comprehensive book.-F. Sizov, Institute of Semiconductor Physics, National Academy of Sciences, Kiev, Ukraine

Semiconductor radiation detectors technology and applications

CERN Document Server

2018-01-01

The aim of this book is to educate the reader on radiation detectors, from sensor to read-out electronics to application. Relatively new detector materials, such as CdZTe and Cr compensated GaAs, are introduced, along with emerging applications of radiation detectors. This X-ray technology has practical applications in medical, industrial, and security applications. It identifies materials based on their molecular composition, not densities as the traditional transmission equipment does. With chapters written by an international selection of authors from both academia and industry, the book covers a wide range of topics on radiation detectors, which will satisfy the needs of both beginners and experts in the field.

Cryogenic semiconductor high-intensity radiation monitors

International Nuclear Information System (INIS)

Palmieri, V.G.; Bell, W.H.; Borer, K.; Casagrande, L.; Da Via, C.; Devine, S.R.H.; Dezillie, B.; Esposito, A.; Granata, V.; Hauler, F.; Jungermann, L.; Li, Z.; Lourenco, C.; Niinikoski, T.O.; Shea, V. O'; Ruggiero, G.; Sonderegger, P.

2003-01-01

This paper describes a novel technique to monitor high-intensity particle beams by means of a semiconductor detector. It consists of cooling a semiconductor detector down to cryogenic temperature to suppress the thermally generated leakage current and to precisely measure the integrated ionization signal. It will be shown that such a device provides very good linearity and a dynamic range wider than is possible with existing techniques. Moreover, thanks to the Lazarus effect, extreme radiation hardness can be achieved providing in turn absolute intensity measurements against precise calibration of the device at low beam flux

Valence band structure of InAs(1-x)Bi(x) and InSb(1-x)Bi(x) alloy semiconductors calculated using valence band anticrossing model.

Science.gov (United States)

Samajdar, D P; Dhar, S

2014-01-01

The valence band anticrossing model has been used to calculate the heavy/light hole and spin-orbit split-off energies in InAs(1-x)Bi(x) and InSb(1-x)Bi(x) alloy systems. It is found that both the heavy/light hole, and spin-orbit split E + levels move upwards in energy with an increase in Bi content in the alloy, whereas the split E - energy for the holes shows a reverse trend. The model is also used to calculate the reduction of band gap energy with an increase in Bi mole fraction. The calculated values of band gap variation agree well with the available experimental data.

Use of semiconductors in energy-dispersive X-ray analysis

International Nuclear Information System (INIS)

Schiekel, M.

1983-01-01

The state-of-the-art of the application of semiconductor detectors with high resolution for photon radiation in energy-dispersive spectrometers is reviewed. It is concluded that the use of semiconductor detectors results in an improvement of spectrometers and thus in a wider range of application. Characteristics of the spectrometers, such as energy resolution and efficiency, are discussed and possible applications indicated. (author)

Position-sensitive superconductor detectors

International Nuclear Information System (INIS)

Kurakado, M.; Taniguchi, K.

2016-01-01

Superconducting tunnel junction (STJ) detectors and superconducting transition- edge sensors (TESs) are representative superconductor detectors having energy resolutions much higher than those of semiconductor detectors. STJ detectors are thin, thereby making it suitable for detecting low-energy X rays. The signals of STJ detectors are more than 100 times faster than those of TESs. By contrast, TESs are microcalorimeters that measure the radiation energy from the change in the temperature. Therefore, signals are slow and their time constants are typically several hundreds of μs. However, TESs possess excellent energy resolutions. For example, TESs have a resolution of 1.6 eV for 5.9-keV X rays. An array of STJs or TESs can be used as a pixel detector. Superconducting series-junction detectors (SSJDs) comprise multiple STJs and a single-crystal substrate that acts as a radiation absorber. SSJDs are also position sensitive, and their energy resolutions are higher than those of semiconductor detectors. In this paper, we give an overview of position-sensitive superconductor detectors.

SiliPET: Design of an ultra-high resolution small animal PET scanner based on stacks of semi-conductor detectors

International Nuclear Information System (INIS)

Cesca, N.; Auricchio, N.; Di Domenico, G.; Zavattini, G.; Malaguti, R.; Andritschke, R.; Kanbach, G.; Schopper, F.

2007-01-01

We studied with Monte Carlo simulations, using the EGSnrc code, a new scanner for small animal positron emission tomography (PET), based on stacks of double-sided semiconductor detectors. Each stack is composed of planar detectors with dimension 70x60x1 mm 3 and orthogonal strips on both sides with 500 μm pitch to read the two interaction coordinates, the third being the detector number in the stack. Multiple interactions in a stack are discarded. In this way, we achieve a precise determination of the first interaction point of the two 511 keV photons. The reduced dimensions of the scanner also improve the solid angle coverage resulting in a high sensitivity. Preliminary results of scanners based on Si planar detectors are presented and the initial tomographic reconstructions demonstrate very good spatial resolution limited only by the positron range. This suggests that, this is a promising new approach for small animal PET imaging. We are testing some double-sided silicon detectors, equipped with 128 orthogonal p and n strips on opposite sides using VATAGP3 ASIC by IDEAS

Direct measurement of the near-field super resolved focused spot in InSb

NARCIS (Netherlands)

Assafrao, A.C.; Wachters, A.J.H.; Verheijen, M.; Nugrowati, A.M.; Pereira, S.F.; Urbach, H.P.; Armand, M.F.; Olivier, S.

2012-01-01

Under appropriate laser exposure, a thin film of InSb exhibits a sub-wavelength thermally modified area that can be used to focus light beyond the diffraction limit. This technique, called Super-Resolution Near-Field Structure, is a potential candidate for ultrahigh density optical data storage and

Radiation detectors laboratory; Laboratorio de detectores de radiacion

Energy Technology Data Exchange (ETDEWEB)

Ramirez J, F.J. [Instituto Nacional de Investigaciones Nucleares, A.P. 18-1027, 11801 Mexico D.F. (Mexico)

1997-07-01

The Radiation detectors laboratory was established with the assistance of the International Atomic Energy Agency which gave this the responsibility to provide its services at National and regional level for Latin America and it is located at the ININ. The more expensive and delicate radiation detectors are those made of semiconductor, so it has been put emphasis in the use and repairing of these detectors type. The supplied services by this laboratory are: selection consultant, detectors installation and handling and associated systems. Installation training, preventive and corrective maintenance of detectors and detection systems calibration. (Author)

Measurement of neutron flux distribution by semiconductor detector; merenje raspodele neutronskog fluksa poluprovodnickim detektorom

Energy Technology Data Exchange (ETDEWEB)

Obradovic, D; Bosevski, T [Institut za nuklearne nauke Boris Kidric, Vinca, Beograd (Yugoslavia)

1964-07-01

Application of semiconductor detectors for measuring neutron flux distribution is about 10 times faster than measurements by activation foils and demands significantly lower reactor power. Following corrections are avoided: mass of activation foils which influences the self shielding, nuclear decay during activity measurements; counter dead-time. It is possible to control the measured data during experiment and repeat measurements if needed. Precision of the measurement is higher since it is possible to choose the wanted statistics. The method described in this paper is applied for measurements at the RB reactor. It is concluded that the method is suitable for fast measurements but the activation analysis is still indispensable.

Effects of ionizing radiation on cryogenic infrared detectors

Science.gov (United States)

Moseley, S. H.; Silverberg, R. F.; Lakew, B.

1989-01-01

The Diffuse Infrared Background Experiment (DIRBE) is one of three experiments to be carried aboard the Cosmic Background Explorer (COBE) satellite scheduled to be launched by NASA on a Delta rocket in 1989. The DIRBE is a cryogenic absolute photometer operating in a liquid helium dewar at 1.5 K. Photometric stability is a principal requirement for achieving the scientific objectives of this experiment. The Infrared Astronomy Satellite (IRAS), launched in 1983, which used detectors similar to those in DIRBE, revealed substantial changes in detector responsivity following exposure to ionizing radiation encountered on passage through the South Atlantic Anomaly (SAA). Since the COBE will use the same 900 Km sun-synchronous orbit as IRAS, ionizing radiation-induced performance changes in the detectors were a major concern. Here, ionizing radiation tests carried out on all the DIRBE photodetectors are reported. Responsivity changes following exposure to gamma rays, protons, and alpha particle are discussed. The detector performance was monitored following a simulated entire mission life dose. In addition, the response of the detectors to individual particle interactions was measured. The InSb photovoltaic detectors and the Blocked Impurity Band (BIB) detectors revealed no significant change in responsivity following radiation exposure. The Ge:Ga detectors show large effects which were greatly reduced by proper thermal annealing.

Dewetting and Segregation of Zn-Doped InSb in Microgravity Experiments

Science.gov (United States)

Ostrogorsky, A. G.; Marin, C.; Duffar, T.; Volz, M.

2009-01-01

In directional solidification, dewetting is characterized by the lack of contact between the crystal and the crucible walls, due to the existence of a liquid meniscus at the level of the solid-liquid interface. This creates a gap of a few tens of micrometers between the crystal and the crucible. One of the immediate consequences of this phenomenon is the dramatic improvement of the quality of the crystal. This improvement is partly due to the modification of the solid-liquid interface curvature and partly to the absence of sticking and spurious nucleation at the crystal-crucible interface. Dewetting has been, commonly observed during the growth of semiconductors in crucibles under microgravity conditions where it appears to be very stable: the gap between the crystal and the crucible remains constant along several centimetres of growth. The physical models of the phenomenon are well established and they predict that dewetting should not occur in microgravity, if sufficient static pressure is imposed on the melt, pushing it towards the crucible. We present the results of InSb(Zn) solidification experiments conducted at the International Space Station (ISS) where, in spite of a spring exerting a pressure on the liquid, partial dewetting did occur. This surprising result is discussed in terms of force exerted .by the spring on the liquid and of possibility that the spring did not work properly. Furthermore, it appears that the segregation of the Zn was not affected by the occurrence of the dewetting. The data suggest that there was no significant interference of convection with segregation of Zn in InSb.

Electron injection in semiconductor drift detectors

International Nuclear Information System (INIS)

Rehak, P.; Gatti, E.; Longoni, A.; Sampietro, M.; Castoldi, A.; Vacchi, A.

1990-01-01

The paper reports the first successful results of a simple MOS structure to inject electrons at a given position in Silicon Drift Detectors. The structure allows on-line calibration of the drift velocity of electrons within the detector. The calibration is a practical method to trace the temperature dependence of the electron mobility. Several of these injection structures can be implemented in silicon drift detectors without additional steps in the fabrication process. 5 refs., 11 figs

Status and problems of semiconductor detectors

International Nuclear Information System (INIS)

Walton, J.T.; Goulding, F.S.; Haller, E.E.; Pehl, R.H.

1981-03-01

A brief review is given of the types of silicon and germanium detectors used or presently being developed for nuclear experiments. Large-area silicon and germanium detector telescopes for use in long-range particle detection and identification are emphasized. Large area position-sensitive detectors are also described. Some results are presented regarding radiation damage and damage repair by annealing. Evidence is also presented for the importance of producing large area silicon crystals of adequate quality to reduce trapping problems to negligible proportions

Status and problems of semiconductor detectors

Energy Technology Data Exchange (ETDEWEB)

Walton, J.T.; Goulding, F.S.; Haller, E.E.; Pehl, R.H.

1981-03-01

A brief review is given of the types of silicon and germanium detectors used or presently being developed for nuclear experiments. Large-area silicon and germanium detector telescopes for use in long-range particle detection and identification are emphasized. Large area position-sensitive detectors are also described. Some results are presented regarding radiation damage and damage repair by annealing. Evidence is also presented for the importance of producing large area silicon crystals of adequate quality to reduce trapping problems to negligible proportions.

Improvements in Applied Gamma-Ray Spectrometry with Germanium Semiconductor Detector

Energy Technology Data Exchange (ETDEWEB)

Brune, D; Hellstroem, S [AB Atomenergi, Nykoeping (Sweden); Dubois, J [Chalmers University of Technology, Goeteborg (Sweden)

1965-01-15

A germanium semi-conductor detector has in the present investigation been used in four cases of applied gamma-ray spectrometry. In one case the weak-activity contribution of Cs{sup 134} in Cs{sup 137} standard sources has been determined. The second case concerns the determination of K{sup 42} in samples of biological origin containing strong Na{sup 24} activities. In the third case the Nb{sup 94} and Nb{sup 95} activities from neutron-irradiated niobium foils used in the dosimetry of high neutron fluxes with long exposure times have been completely resolved and it has been possible to determine the ratio of the two activities with a high degree of accuracy. Finally, a Zr{sup 95} - Nb{sup 95} source has been analysed in a similar way with respect to its radiochemical composition. The resolution obtained also made possible a determination of the branching ratio of the two gamma-transitions in Zr{sup 95} and of the energies of the gamma-transitions of both nuclides.

Entangled γ-photons—classical laboratory exercise with modern detectors

Science.gov (United States)

Hetfleiš, Jakub; Lněnička, Jindřich; Šlégr, Jan

2018-03-01

This paper describes the application of modern semiconductor detectors of γ and β radiation, which can be used in undergraduate laboratory experiments and lecture demonstrations as a replacement for Geiger-Müller (GM) tubes. Unlike GM tubes, semiconductor detectors do not require a high voltage power source or shaping circuits. The principle of operation of semiconductor detectors is discussed briefly, and classical experiments from nuclear physics are described, ranging from the measurements of linear and mass attenuation coefficient to a demonstration of entangled γ-photons.

A new metallic oxide semiconductor field effect transistor detector for use of in vivo dosimetry

International Nuclear Information System (INIS)

Qi Zhenyu; Deng Xiaowu; Huang Shaomin; Kang Dehua; Anatoly Rosenfeld

2006-01-01

Objective: To investigate the application of a recently developed metallic oxide semiconductor field effect transistor (MOSFET) detector for use in vivo dosimetry. Methods: The MOSFET detector was calibrated for X-ray beams of 8 MV and 15 MV, as well as electron beams with energy of 6,8,12 and 18 MeV. The dose linearity of the MOSFET detector was investigated for the doses ranging from 0 up to 50 Gy using 8 MV X-ray beams. Angular effect was evaluated as well in a cylindrical PMMA phantom by changing the beam entrance angle every 15 degree clockwise. The MOSFET detector was then used for a breast cancer patient in vivo dose measurement, after the treatment plan was verified in a water phantom using a NE-2571 ion chamber, in vivo measurements were performed in the first and last treatment, and once per week during the whole treatment. The measured doses were then compared with planning dose to evaluate the accuracy of each treatment. Results: The MOSFET detector represented a good energy response for X-ray beams of 8 MV and 15 MV, and for electron beams with energy of 6 MeV up to 18 MeV. With the 6 V bias, Dose linearity error of the MOSFET detector was within 3.0% up to approximately 50 Gy, which can be significantly reduced to 1% when the detector was calibrated before and after each measurement. The MOSFET response varied within 1.5% for angles from 270 degree to 90 degree. However, maximum error of 10.0% was recorded comparing MOSFET response between forward and backward direction. In vivo measurement for a breast cancer patient using 3DCRT showed that, the average dose deviation between measurement and calculation was 2.8%, and the maximum error was less then 5.0%. Conclusions: The new MOSFET detector, with its advantages of being in size, easy use, good energy response and dose linearity, can be used for in vivo dose measurement. (authors)

Development of an integrated response generator for Si/CdTe semiconductor Compton cameras

International Nuclear Information System (INIS)

Odaka, Hirokazu; Sugimoto, Soichiro; Ishikawa, Shin-nosuke; Katsuta, Junichiro; Koseki, Yuu; Fukuyama, Taro; Saito, Shinya; Sato, Rie; Sato, Goro; Watanabe, Shin

2010-01-01

We have developed an integrated response generator based on Monte Carlo simulation for Compton cameras composed of silicon (Si) and cadmium telluride (CdTe) semiconductor detectors. In order to construct an accurate detector response function, the simulation is required to include a comprehensive treatment of the semiconductor detector devices and the data processing system in addition to simulating particle tracking. Although CdTe is an excellent semiconductor material for detection of soft gamma rays, its ineffective charge transport property distorts its spectral response. We investigated the response of CdTe pad detectors in the simulation and present our initial results here. We also performed the full simulation of prototypes of Si/CdTe semiconductor Compton cameras and report on the reproducibility of detection efficiencies and angular resolutions of the cameras, both of which are essential performance parameters of astrophysical instruments.

Valence Band Structure of InAs1−xBix and InSb1−xBix Alloy Semiconductors Calculated Using Valence Band Anticrossing Model

Science.gov (United States)

Samajdar, D. P.; Dhar, S.

2014-01-01

The valence band anticrossing model has been used to calculate the heavy/light hole and spin-orbit split-off energies in InAs1−xBix and InSb1−xBix alloy systems. It is found that both the heavy/light hole, and spin-orbit split E + levels move upwards in energy with an increase in Bi content in the alloy, whereas the split E − energy for the holes shows a reverse trend. The model is also used to calculate the reduction of band gap energy with an increase in Bi mole fraction. The calculated values of band gap variation agree well with the available experimental data. PMID:24592181

Semiconductor opto-electronics

CERN Document Server

Moss, TS; Ellis, B

1972-01-01

Semiconductor Opto-Electronics focuses on opto-electronics, covering the basic physical phenomena and device behavior that arise from the interaction between electromagnetic radiation and electrons in a solid. The first nine chapters of this book are devoted to theoretical topics, discussing the interaction of electromagnetic waves with solids, dispersion theory and absorption processes, magneto-optical effects, and non-linear phenomena. Theories of photo-effects and photo-detectors are treated in detail, including the theories of radiation generation and the behavior of semiconductor lasers a

Calorimetric low-temperature detectors on semiconductor base for the energy-resolving detection of heavy ions

International Nuclear Information System (INIS)

Kienlin, A. von.

1994-01-01

In the framework of this thesis for the first time calorimetric low-temperature detectors for the energy-resolving detection of heavy ions were developed and successfully applied. Constructed were two different detector types, which work both with a semiconductor thermistor. The temperature increasement effected by a particle incidence is read out. In the first detector type the thermistor was simutaneously used as absorber. The thickness of the germanium crystals was sufficient in order to stop the studied heavy ions completely. In the second type, a composed calorimeter, a sapphire crystal, which was glued on a germanium thermistor, served as absorber for the incident heavy ions. The working point of the calorimeter lies in the temperature range (1.2-4.2 K), which is reachable with a pumped 4 He cryostat. The temperatur increasement of the calorimeter amounts after the incidence of a single α particle about 20-30 μK and that after a heavy ion incidence up to some mK. An absolute energy resolution of 400-500 keV was reached. In nine beam times the calorimeters were irradiated by heavy ions ( 20 Ne, 40 Ar, 136 Xe, 208 Pb, 209 Bi) of different energies (3.6 MeV/nucleon< E<12.5 MeV/nucleon) elastically scattered from gold foils. In the pulse height spectra of the first detector type relatively broad, complex-structurated line shapes were observed. By systematic measurements dependences of the complex line structures on operational parameters of the detector, the detector temperature, and the position of the incident particle could be detected. Together with the results of further experiments a possible interpretation of these phenomena is presented. Contrarily to the complex line structures of the pure germanium thermistor the line shapes in the pulse height spectra, which were taken up in a composite germanium/sapphire calorimeter, are narrow and Gauss-shaped

Fast current amplifier for background-limited operation of photovoltaic InSb detectors

Energy Technology Data Exchange (ETDEWEB)

Altmann, J; Koehler, S; Lahmann, W

1981-01-01

A fast current amplifier for use with photovoltaic indium antimonide detectors is described which was designed for detection of lidar return signals. Near background-limited operation was possible for bandwidths up to 0.8 MHz.

Molecular beam epitaxy growth of InSb1−xBix thin films

DEFF Research Database (Denmark)

Song, Yuxin; Wang, Shumin; Saha Roy, Ivy

2013-01-01

Molecular beam epitaxy growth for InSb1−xBix thin films on (100) GaAs substrates is reported. Successful Bi incorporation for 2% is achieved, and up to 70% of the incorporated Bi atoms are at substitutional sites. The effects of growth parameters on Bi incorporation and surface morphology are stu...

2011 ATLAS Detector Performance - ID and Forward detectors

CERN Document Server

Davies‎, E; The ATLAS collaboration; Abdel Khalek, S

2012-01-01

This poster describes the performance of 2 parts of ATLAS: - The Inner Detector which consists of 3 subdetectors: the Pixel detector, the SemiConductor Tracker (or SCT) and the Transition Radiation Tracker (or TRT). Here, we report on Pixel detector and SCT performance over 2011. - ALFA detector which will determine the absolute luminosity of the CERN LHC at the ATLAS Interaction Point (IP), and the total proton-proton cross section, by tracking elastically scattered protons at very small angles in the limit of the Coulomb Nuclear interference region.

Tuning Rashba spin-orbit coupling in homogeneous semiconductor nanowires

Science.gov (United States)

Wójcik, Paweł; Bertoni, Andrea; Goldoni, Guido

2018-04-01

We use k .p theory to estimate the Rashba spin-orbit coupling (SOC) in large semiconductor nanowires. We specifically investigate GaAs- and InSb-based devices with different gate configurations to control symmetry and localization of the electron charge density. We explore gate-controlled SOC for wires of different size and doping, and we show that in high carrier density SOC has a nonlinear electric field susceptibility, due to large reshaping of the quantum states. We analyze recent experiments with InSb nanowires in light of our calculations. Good agreement is found with the SOC coefficients reported in Phys. Rev. B 91, 201413(R) (2015), 10.1103/PhysRevB.91.201413, but not with the much larger values reported in Nat. Commun. 8, 478 (2017), 10.1038/s41467-017-00315-y. We discuss possible origins of this discrepancy.

Infrared absorption in pseudobinary InSb1-xBix compounds

International Nuclear Information System (INIS)

El-Den, M.B.; Mina, N.K.; Samy, A.M.; El-Mously, M.K.

1988-08-01

The group III-V pseudobinary InSb 1-x Bi x compounds, with x = 0, 0.2 and 0.04, were prepared in thin ribbon forms (30 μ) by splat cooling in air. The optical absorption α(λ) was measured in the wavelength range from 4 to 15 μm. The optical energy gap E opt. , was calculated for the three compounds. A shift of the absorption edge towards longer wavelengths with increasing Bi content was observed. (author). 7 refs, 4 figs

Fast-timing methods for semiconductor detectors

International Nuclear Information System (INIS)

Spieler, H.

1982-03-01

The basic parameters are discussed which determine the accuracy of timing measurements and their effect in a practical application, specifically timing with thin-surface barrier detectors. The discussion focusses on properties of the detector, low-noise amplifiers, trigger circuits and time converters. New material presented in this paper includes bipolar transistor input stages with noise performance superior to currently available FETs, noiseless input terminations in sub-nanosecond preamplifiers and methods using transmission lines to couple the detector to remotely mounted preamplifiers. Trigger circuits are characterized in terms of effective rise time, equivalent input noise and residual jitter

Characterisation of Silicon Timing Detectors for the RD50 Collaboration

CERN Document Server

Immig, David Maximilian

2017-01-01

Increasing pile-up and irradiation following with the high luminosity upgrade of the LHC, demands the development of improved semiconductor detectors. The former problem can be reduced by more precise time information, which can be obtained using a future detector based on the low gain avalanche diode (LGAD). LGADs are studied by the RD50-Collaboration, which studies the characteristics of semiconductor devices to improve these for future requirements of high energy physics. This reports is engaged with the process to characterise semiconductor detectors, specially LGADs, with capacitance-voltage and current-voltage measurements as well as transient current techniques of un- and irradiated semiconductor devices.

A new computational method for simulation of charge transport in semiconductor radiation detectors

International Nuclear Information System (INIS)

Holban, I.

1993-01-01

An effective computational method for simulation of charge transport in semiconductor radiation detectors is the purpose of the present work. Basic equations for analysis include (1) Poisson's equations, (2) continuity equation for electrons and holes, (3) rate equations for deep levels, (4) current equation for electrons and holes and (5) boundary conditions. The system of equations is discretized and equidistant space and time grids is brought. The nonlinearity of the problem is overcome by using Newton-Raphson iteration scheme. Instead of solving a nonlinear boundary problem we resolve a linear matrix equation. Our computation procedure becomes very efficient using a sparse matrix. The computed program allows to calculate the charge collection efficiency and transient response for arbitrary electric fields when trapping and detrapping effects are present. The earlier literature results are reproduced. (Author)

Operation and performance of the ATLAS semiconductor tracker

CERN Document Server

Aad, Georges; Abdallah, Jalal; Abdel Khalek, Samah; Abdinov, Ovsat; Aben, Rosemarie; Abi, Babak; Abolins, Maris; AbouZeid, Ossama; Abramowicz, Halina; Abreu, Henso; Abreu, Ricardo; Abulaiti, Yiming; Acharya, Bobby Samir; Adamczyk, Leszek; Adams, David; Adelman, Jahred; Adomeit, Stefanie; Adye, Tim; Agatonovic-Jovin, Tatjana; Aguilar-Saavedra, Juan Antonio; Agustoni, Marco; Ahlen, Steven; Ahmad, Ashfaq; Ahmadov, Faig; Aielli, Giulio; Åkesson, Torsten Paul Ake; Akimoto, Ginga; Akimov, Andrei; Alberghi, Gian Luigi; Albert, Justin; Albrand, Solveig; Alconada Verzini, Maria Josefina; Aleksa, Martin; Aleksandrov, Igor; Alexa, Calin; Alexander, Gideon; Alexandre, Gauthier; Alexopoulos, Theodoros; Alhroob, Muhammad; Alimonti, Gianluca; Alio, Lion; Alison, John; Allbrooke, Benedict; Allison, Lee John; Allport, Phillip; Allwood-Spiers, Sarah; Almond, John; Aloisio, Alberto; Alonso, Alejandro; Alonso, Francisco; Alpigiani, Cristiano; Altheimer, Andrew David; Alvarez Gonzalez, Barbara; Alviggi, Mariagrazia; Amako, Katsuya; Amaral Coutinho, Yara; Amelung, Christoph; Amidei, Dante; Amor Dos Santos, Susana Patricia; Amorim, Antonio; Amoroso, Simone; Amram, Nir; Amundsen, Glenn; Anastopoulos, Christos; Ancu, Lucian Stefan; Andari, Nansi; Andeen, Timothy; Anders, Christoph Falk; Anders, Gabriel; Anderson, Kelby; Andreazza, Attilio; Andrei, George Victor; Anduaga, Xabier; Angelidakis, Stylianos; Angelozzi, Ivan; Anger, Philipp; Angerami, Aaron; Anghinolfi, Francis; Anisenkov, Alexey; Anjos, Nuno; Annovi, Alberto; Antonaki, Ariadni; Antonelli, Mario; Antonov, Alexey; Antos, Jaroslav; Anulli, Fabio; Aoki, Masato; Aperio Bella, Ludovica; Apolle, Rudi; Arabidze, Giorgi; Aracena, Ignacio; Arai, Yasuo; Araque, Juan Pedro; Arce, Ayana; Arguin, Jean-Francois; Argyropoulos, Spyridon; Arik, Metin; Armbruster, Aaron James; Arnaez, Olivier; Arnal, Vanessa; Arnold, Hannah; Arslan, Ozan; Artamonov, Andrei; Artoni, Giacomo; Asai, Shoji; Asbah, Nedaa; Ashkenazi, Adi; Ask, Stefan; Åsman, Barbro; Asquith, Lily; Assamagan, Ketevi; Astalos, Robert; Atkinson, Markus; Atlay, Naim Bora; Auerbach, Benjamin; Augsten, Kamil; Aurousseau, Mathieu; Avolio, Giuseppe; Azuelos, Georges; Azuma, Yuya; Baak, Max; Bacci, Cesare; Bachacou, Henri; Bachas, Konstantinos; Backes, Moritz; Backhaus, Malte; Backus Mayes, John; Badescu, Elisabeta; Bagiacchi, Paolo; Bagnaia, Paolo; Bai, Yu; Bain, Travis; Baines, John; Baker, Oliver Keith; Baker, Sarah; Balek, Petr; Balli, Fabrice; Banas, Elzbieta; Banerjee, Swagato; Banfi, Danilo; Bangert, Andrea Michelle; Bannoura, Arwa A E; Bansal, Vikas; Bansil, Hardeep Singh; Barak, Liron; Baranov, Sergei; Barberio, Elisabetta Luigia; Barberis, Dario; Barbero, Marlon; Barillari, Teresa; Barisonzi, Marcello; Barklow, Timothy; Barlow, Nick; Barnett, Bruce; Barnett, Michael; Barnovska, Zuzana; Baroncelli, Antonio; Barone, Gaetano; Barr, Alan; Barreiro, Fernando; Barreiro Guimarães da Costa, João; Bartoldus, Rainer; Barton, Adam Edward; Bartos, Pavol; Bartsch, Valeria; Bassalat, Ahmed; Basye, Austin; Bates, Richard; Batkova, Lucia; Batley, Richard; Battistin, Michele; Bauer, Florian; Bawa, Harinder Singh; Beau, Tristan; Beauchemin, Pierre-Hugues; Beccherle, Roberto; Bechtle, Philip; Beck, Hans Peter; Becker, Anne Kathrin; Becker, Sebastian; Beckingham, Matthew; Becot, Cyril; Beddall, Andrew; Beddall, Ayda; Bedikian, Sourpouhi; Bednyakov, Vadim; Bee, Christopher; Beemster, Lars; Beermann, Thomas; Begel, Michael; Behr, Katharina; Belanger-Champagne, Camille; Bell, Paul; Bell, William; Bella, Gideon; Bellagamba, Lorenzo; Bellerive, Alain; Bellomo, Massimiliano; Belloni, Alberto; Belotskiy, Konstantin; Beltramello, Olga; Benary, Odette; Benchekroun, Driss; Bendtz, Katarina; Benekos, Nektarios; Benhammou, Yan; Benhar Noccioli, Eleonora; Benitez Garcia, Jorge-Armando; Benjamin, Douglas; Bensinger, James; Benslama, Kamal; Bentvelsen, Stan; Berge, David; Bergeaas Kuutmann, Elin; Berger, Nicolas; Berghaus, Frank; Berglund, Elina; Beringer, Jürg; Bernabéu, José; Bernard, Clare; Bernat, Pauline; Bernius, Catrin; Bernlochner, Florian Urs; Berry, Tracey; Berta, Peter; Bertella, Claudia; Bertolucci, Federico; Besana, Maria Ilaria; Besjes, Geert-Jan; Bessidskaia, Olga; Besson, Nathalie; Betancourt, Christopher; Bethke, Siegfried; Bhimji, Wahid; Bianchi, Riccardo-Maria; Bianchini, Louis; Bianco, Michele; Biebel, Otmar; Bieniek, Stephen Paul; Bierwagen, Katharina; Biesiada, Jed; Biglietti, Michela; Bilbao De Mendizabal, Javier; Bilokon, Halina; Bindi, Marcello; Binet, Sebastien; Bingul, Ahmet; Bini, Cesare; Black, Curtis; Black, James; Black, Kevin; Blackburn, Daniel; Blair, Robert; Blanchard, Jean-Baptiste; Blazek, Tomas; Bloch, Ingo; Blocker, Craig; Blum, Walter; Blumenschein, Ulrike; Bobbink, Gerjan; Bobrovnikov, Victor; Bocchetta, Simona Serena; Bocci, Andrea; Boddy, Christopher Richard; Boehler, Michael; Boek, Jennifer; Boek, Thorsten Tobias; Bogaerts, Joannes Andreas; Bogdanchikov, Alexander; Bogouch, Andrei; Bohm, Christian; Bohm, Jan; Boisvert, Veronique; Bold, Tomasz; Boldea, Venera; Boldyrev, Alexey; Bomben, Marco; Bona, Marcella; Boonekamp, Maarten; Borisov, Anatoly; Borissov, Guennadi; Borri, Marcello; Borroni, Sara; Bortfeldt, Jonathan; Bortolotto, Valerio; Bos, Kors; Boscherini, Davide; Bosman, Martine; Boterenbrood, Hendrik; Boudreau, Joseph; Bouffard, Julian; Bouhova-Thacker, Evelina Vassileva; Boumediene, Djamel Eddine; Bourdarios, Claire; Bousson, Nicolas; Boutouil, Sara; Boveia, Antonio; Boyd, James; Boyko, Igor; Bozovic-Jelisavcic, Ivanka; Bracinik, Juraj; Branchini, Paolo; Brandt, Andrew; Brandt, Gerhard; Brandt, Oleg; Bratzler, Uwe; Brau, Benjamin; Brau, James; Braun, Helmut; Brazzale, Simone Federico; Brelier, Bertrand; Brendlinger, Kurt; Brennan, Amelia Jean; Brenner, Richard; Bressler, Shikma; Bristow, Kieran; Bristow, Timothy Michael; Britton, Dave; Brochu, Frederic; Brock, Ian; Brock, Raymond; Bromberg, Carl; Bronner, Johanna; Brooijmans, Gustaaf; Brooks, Timothy; Brooks, William; Brosamer, Jacquelyn; Brost, Elizabeth; Brown, Gareth; Brown, Jonathan; Bruckman de Renstrom, Pawel; Bruncko, Dusan; Bruneliere, Renaud; Brunet, Sylvie; Bruni, Alessia; Bruni, Graziano; Bruschi, Marco; Bryngemark, Lene; Buanes, Trygve; Buat, Quentin; Bucci, Francesca; Buchholz, Peter; Buckingham, Ryan; Buckley, Andrew; Buda, Stelian Ioan; Budagov, Ioulian; Buehrer, Felix; Bugge, Lars; Bugge, Magnar Kopangen; Bulekov, Oleg; Bundock, Aaron Colin; Burckhart, Helfried; Burdin, Sergey; Burghgrave, Blake; Burke, Stephen; Burmeister, Ingo; Busato, Emmanuel; Büscher, Daniel; Büscher, Volker; Bussey, Peter; Buszello, Claus-Peter; Butler, Bart; Butler, John; Butt, Aatif Imtiaz; Buttar, Craig; Butterworth, Jonathan; Butti, Pierfrancesco; Buttinger, William; Buzatu, Adrian; Byszewski, Marcin; Cabrera Urbán, Susana; Caforio, Davide; Cakir, Orhan; Calafiura, Paolo; Calandri, Alessandro; Calderini, Giovanni; Calfayan, Philippe; Calkins, Robert; Caloba, Luiz; Calvet, David; Calvet, Samuel; Camacho Toro, Reina; Camarda, Stefano; Cameron, David; Caminada, Lea Michaela; Caminal Armadans, Roger; Campana, Simone; Campanelli, Mario; Campoverde, Angel; Canale, Vincenzo; Canepa, Anadi; Cantero, Josu; Cantrill, Robert; Cao, Tingting; Capeans Garrido, Maria Del Mar; Caprini, Irinel; Caprini, Mihai; Capua, Marcella; Caputo, Regina; Cardarelli, Roberto; Carli, Tancredi; Carlino, Gianpaolo; Carminati, Leonardo; Caron, Sascha; Carquin, Edson; Carrillo-Montoya, German D; Carter, Antony; Carter, Janet; Carvalho, João; Casadei, Diego; Casado, Maria Pilar; Castaneda-Miranda, Elizabeth; Castelli, Angelantonio; Castillo Gimenez, Victoria; Castro, Nuno Filipe; Catastini, Pierluigi; Catinaccio, Andrea; Catmore, James; Cattai, Ariella; Cattani, Giordano; Caughron, Seth; Cavaliere, Viviana; Cavalli, Donatella; Cavalli-Sforza, Matteo; Cavasinni, Vincenzo; Ceradini, Filippo; Cerio, Benjamin; Cerny, Karel; Santiago Cerqueira, Augusto; Cerri, Alessandro; Cerrito, Lucio; Cerutti, Fabio; Cerv, Matevz; Cervelli, Alberto; Cetin, Serkant Ali; Chafaq, Aziz; Chakraborty, Dhiman; Chalupkova, Ina; Chan, Kevin; Chang, Philip; Chapleau, Bertrand; Chapman, John Derek; Charfeddine, Driss; Charlton, Dave; Chau, Chav Chhiv; Chavez Barajas, Carlos Alberto; Cheatham, Susan; Chegwidden, Andrew; Chekanov, Sergei; Chekulaev, Sergey; Chelkov, Gueorgui; Chelstowska, Magda Anna; Chen, Chunhui; Chen, Hucheng; Chen, Karen; Chen, Liming; Chen, Shenjian; Chen, Xin; Chen, Yujiao; Cheng, Hok Chuen; Cheng, Yangyang; Cheplakov, Alexander; Cherkaoui El Moursli, Rajaa; Chernyatin, Valeriy; Cheu, Elliott; Chevalier, Laurent; Chiarella, Vitaliano; Chiefari, Giovanni; Childers, John Taylor; Chilingarov, Alexandre; Chiodini, Gabriele; Chisholm, Andrew; Chislett, Rebecca Thalatta; Chitan, Adrian; Chizhov, Mihail; Chouridou, Sofia; Chow, Bonnie Kar Bo; Christidi, Ilektra-Athanasia; Chromek-Burckhart, Doris; Chu, Ming-Lee; Chudoba, Jiri; Chwastowski, Janusz; Chytka, Ladislav; Ciapetti, Guido; Ciftci, Abbas Kenan; Ciftci, Rena; Cinca, Diane; Cindro, Vladimir; Ciocio, Alessandra; Cirkovic, Predrag; Citron, Zvi Hirsh; Citterio, Mauro; Ciubancan, Mihai; Clark, Allan G; Clark, Philip James; Clarke, Robert; Cleland, Bill; Clemens, Jean-Claude; Clement, Christophe; Coadou, Yann; Cobal, Marina; Coccaro, Andrea; Cochran, James H; Coffey, Laurel; Cogan, Joshua Godfrey; Coggeshall, James; Cole, Brian; Cole, Stephen; Colijn, Auke-Pieter; Collins-Tooth, Christopher; Collot, Johann; Colombo, Tommaso; Colon, German; Compostella, Gabriele; Conde Muiño, Patricia; Coniavitis, Elias; Conidi, Maria Chiara; Connell, Simon Henry; Connelly, Ian; Consonni, Sofia Maria; Consorti, Valerio; Constantinescu, Serban; Conta, Claudio; Conti, Geraldine; Conventi, Francesco; Cooke, Mark; Cooper, Ben; Cooper-Sarkar, Amanda; Cooper-Smith, Neil; Copic, Katherine; Cornelissen, Thijs; Corradi, Massimo; Corriveau, Francois; Corso-Radu, Alina; Cortes-Gonzalez, Arely; Cortiana, Giorgio; Costa, Giuseppe; Costa, María José; Costanzo, Davide; Côté, David; Cottin, Giovanna; Cowan, Glen; Cox, Brian; Cranmer, Kyle; Cree, Graham; Crépé-Renaudin, Sabine; Crescioli, Francesco; Crispin Ortuzar, Mireia; Cristinziani, Markus; Croft, Vince; Crosetti, Giovanni; Cuciuc, Constantin-Mihai; Cuenca Almenar, Cristóbal; Cuhadar Donszelmann, Tulay; Cummings, Jane; Curatolo, Maria; Cuthbert, Cameron; Czirr, Hendrik; Czodrowski, Patrick; Czyczula, Zofia; D'Auria, Saverio; D'Onofrio, Monica; Da Cunha Sargedas De Sousa, Mario Jose; Da Via, Cinzia; Dabrowski, Wladyslaw; Dafinca, Alexandru; Dai, Tiesheng; Dale, Orjan; Dallaire, Frederick; Dallapiccola, Carlo; Dam, Mogens; Daniells, Andrew Christopher; Dano Hoffmann, Maria; Dao, Valerio; Darbo, Giovanni; Darlea, Georgiana Lavinia; Darmora, Smita; Dassoulas, James; Dattagupta, Aparajita; Davey, Will; David, Claire; Davidek, Tomas; Davies, Eleanor; Davies, Merlin; Davignon, Olivier; Davison, Adam; Davison, Peter; Davygora, Yuriy; Dawe, Edmund; Dawson, Ian; Daya-Ishmukhametova, Rozmin; De, Kaushik; de Asmundis, Riccardo; De Castro, Stefano; De Cecco, Sandro; de Graat, Julien; De Groot, Nicolo; de Jong, Paul; De la Torre, Hector; De Lorenzi, Francesco; De Nooij, Lucie; De Pedis, Daniele; De Salvo, Alessandro; De Sanctis, Umberto; De Santo, Antonella; De Vivie De Regie, Jean-Baptiste; De Zorzi, Guido; Dearnaley, William James; Debbe, Ramiro; Debenedetti, Chiara; Dechenaux, Benjamin; Dedovich, Dmitri; Degenhardt, James; Deigaard, Ingrid; Del Peso, Jose; Del Prete, Tarcisio; Deliot, Frederic; Delitzsch, Chris Malena; Deliyergiyev, Maksym; Dell'Acqua, Andrea; Dell'Asta, Lidia; Dell'Orso, Mauro; Della Pietra, Massimo; della Volpe, Domenico; Delmastro, Marco; Delsart, Pierre-Antoine; Deluca, Carolina; Demers, Sarah; Demichev, Mikhail; Demilly, Aurelien; Denisov, Sergey; Derendarz, Dominik; Derkaoui, Jamal Eddine; Derue, Frederic; Dervan, Paul; Desch, Klaus Kurt; Deterre, Cecile; Deviveiros, Pier-Olivier; Dewhurst, Alastair; Dhaliwal, Saminder; Di Ciaccio, Anna; Di Ciaccio, Lucia; Di Domenico, Antonio; Di Donato, Camilla; Di Girolamo, Alessandro; Di Girolamo, Beniamino; Di Mattia, Alessandro; Di Micco, Biagio; Di Nardo, Roberto; Di Simone, Andrea; Di Sipio, Riccardo; Di Valentino, David; Diaz, Marco Aurelio; Diehl, Edward; Dietrich, Janet; Dietzsch, Thorsten; Diglio, Sara; Dimitrievska, Aleksandra; Dingfelder, Jochen; Dionisi, Carlo; Dita, Petre; Dita, Sanda; Dittus, Fridolin; Djama, Fares; Djobava, Tamar; Barros do Vale, Maria Aline; Do Valle Wemans, André; Doan, Thi Kieu Oanh; Dobos, Daniel; Dobson, Ellie; Doglioni, Caterina; Doherty, Tom; Dohmae, Takeshi; Dolejsi, Jiri; Dolezal, Zdenek; Dolgoshein, Boris; Donadelli, Marisilvia; Donati, Simone; Dondero, Paolo; Donini, Julien; Dopke, Jens; Doria, Alessandra; Dos Anjos, Andre; Dova, Maria-Teresa; Doyle, Tony; Dris, Manolis; Dubbert, Jörg; Dube, Sourabh; Dubreuil, Emmanuelle; Duchovni, Ehud; Duckeck, Guenter; Ducu, Otilia Anamaria; Duda, Dominik; Dudarev, Alexey; Dudziak, Fanny; Duflot, Laurent; Duguid, Liam; Dührssen, Michael; Dunford, Monica; Duran Yildiz, Hatice; Düren, Michael; Durglishvili, Archil; Dwuznik, Michal; Dyndal, Mateusz; Ebke, Johannes; Edson, William; Edwards, Nicholas Charles; Ehrenfeld, Wolfgang; Eifert, Till; Eigen, Gerald; Einsweiler, Kevin; Ekelof, Tord; El Kacimi, Mohamed; Ellert, Mattias; Elles, Sabine; Ellinghaus, Frank; Ellis, Nicolas; Elmsheuser, Johannes; Elsing, Markus; Emeliyanov, Dmitry; Enari, Yuji; Endner, Oliver Chris; Endo, Masaki; Engelmann, Roderich; Erdmann, Johannes; Ereditato, Antonio; Eriksson, Daniel; Ernis, Gunar; Ernst, Jesse; Ernst, Michael; Ernwein, Jean; Errede, Deborah; Errede, Steven; Ertel, Eugen; Escalier, Marc; Esch, Hendrik; Escobar, Carlos; Esposito, Bellisario; Etienvre, Anne-Isabelle; Etzion, Erez; Evans, Hal; Fabbri, Laura; Facini, Gabriel; Fakhrutdinov, Rinat; Falciano, Speranza; Faltova, Jana; Fang, Yaquan; Fanti, Marcello; Farbin, Amir; Farilla, Addolorata; Farooque, Trisha; Farrell, Steven; Farrington, Sinead; Farthouat, Philippe; Fassi, Farida; Fassnacht, Patrick; Fassouliotis, Dimitrios; Favareto, Andrea; Fayard, Louis; Federic, Pavol; Fedin, Oleg; Fedorko, Wojciech; Fehling-Kaschek, Mirjam; Feigl, Simon; Feligioni, Lorenzo; Feng, Cunfeng; Feng, Eric; Feng, Haolu; Fenyuk, Alexander; Fernandez Perez, Sonia; Ferrag, Samir; Ferrando, James; Ferrari, Arnaud; Ferrari, Pamela; Ferrari, Roberto; Ferreira de Lima, Danilo Enoque; Ferrer, Antonio; Ferrere, Didier; Ferretti, Claudio; Ferretto Parodi, Andrea; Fiascaris, Maria; Fiedler, Frank; Filipčič, Andrej; Filipuzzi, Marco; Filthaut, Frank; Fincke-Keeler, Margret; Finelli, Kevin Daniel; Fiolhais, Miguel; Fiorini, Luca; Firan, Ana; Fischer, Julia; Fisher, Wade Cameron; Fitzgerald, Eric Andrew; Flechl, Martin; Fleck, Ivor; Fleischmann, Philipp; Fleischmann, Sebastian; Fletcher, Gareth Thomas; Fletcher, Gregory; Flick, Tobias; Floderus, Anders; Flores Castillo, Luis; Florez Bustos, Andres Carlos; Flowerdew, Michael; Formica, Andrea; Forti, Alessandra; Fortin, Dominique; Fournier, Daniel; Fox, Harald; Fracchia, Silvia; Francavilla, Paolo; Franchini, Matteo; Franchino, Silvia; Francis, David; Franklin, Melissa; Franz, Sebastien; Fraternali, Marco; French, Sky; Friedrich, Conrad; Friedrich, Felix; Froidevaux, Daniel; Frost, James; Fukunaga, Chikara; Fullana Torregrosa, Esteban; Fulsom, Bryan Gregory; Fuster, Juan; Gabaldon, Carolina; Gabizon, Ofir; Gabrielli, Alessandro; Gabrielli, Andrea; Gadatsch, Stefan; Gadomski, Szymon; Gagliardi, Guido; Gagnon, Pauline; Galea, Cristina; Galhardo, Bruno; Gallas, Elizabeth; Gallo, Valentina Santina; Gallop, Bruce; Gallus, Petr; Galster, Gorm Aske Gram Krohn; Gan, KK; Gandrajula, Reddy Pratap; Gao, Jun; Gao, Yongsheng; Garay Walls, Francisca; Garberson, Ford; García, Carmen; Garcia Argos, Carlos; García Navarro, José Enrique; Garcia-Sciveres, Maurice; Gardner, Robert; Garelli, Nicoletta; Garonne, Vincent; Gatti, Claudio; Gaudio, Gabriella; Gaur, Bakul; Gauthier, Lea; Gauzzi, Paolo; Gavrilenko, Igor; Gay, Colin; Gaycken, Goetz; Gazis, Evangelos; Ge, Peng; Gecse, Zoltan; Gee, Norman; Geerts, Daniël Alphonsus Adrianus; Geich-Gimbel, Christoph; Gellerstedt, Karl; Gemme, Claudia; Gemmell, Alistair; Genest, Marie-Hélène; Gentile, Simonetta; George, Matthias; George, Simon; Gerbaudo, Davide; Gershon, Avi; Ghazlane, Hamid; Ghodbane, Nabil; Giacobbe, Benedetto; Giagu, Stefano; Giangiobbe, Vincent; Giannetti, Paola; Gianotti, Fabiola; Gibbard, Bruce; Gibson, Stephen; Gilchriese, Murdock; Gillam, Thomas; Gillberg, Dag; Gilles, Geoffrey; Gingrich, Douglas; Giokaris, Nikos; Giordani, MarioPaolo; Giordano, Raffaele; Giorgi, Francesco Michelangelo; Giraud, Pierre-Francois; Giugni, Danilo; Giuliani, Claudia; Giulini, Maddalena; Gjelsten, Børge Kile; Gkialas, Ioannis; Gladilin, Leonid; Glasman, Claudia; Glatzer, Julian; Glaysher, Paul; Glazov, Alexandre; Glonti, George; Goblirsch-Kolb, Maximilian; Goddard, Jack Robert; Godfrey, Jennifer; Godlewski, Jan; Goeringer, Christian; Goldfarb, Steven; Golling, Tobias; Golubkov, Dmitry; Gomes, Agostinho; Gomez Fajardo, Luz Stella; Gonçalo, Ricardo; Goncalves Pinto Firmino Da Costa, Joao; Gonella, Laura; González de la Hoz, Santiago; Gonzalez Parra, Garoe; Gonzalez Silva, Laura; Gonzalez-Sevilla, Sergio; Goodrick, Maurice; Goossens, Luc; Gorbounov, Petr Andreevich; Gordon, Howard; Gorelov, Igor; Gorfine, Grant; Gorini, Benedetto; Gorini, Edoardo; Gorišek, Andrej; Gornicki, Edward; Goshaw, Alfred; Gössling, Claus; Gostkin, Mikhail Ivanovitch; Gouighri, Mohamed; Goujdami, Driss; Goulette, Marc Phillippe; Goussiou, Anna; Goy, Corinne; Gozpinar, Serdar; Grabas, Herve Marie Xavier; Graber, Lars; Grabowska-Bold, Iwona; Grafström, Per; Grahn, Karl-Johan; Gramling, Johanna; Gramstad, Eirik; Grancagnolo, Sergio; Grassi, Valerio; Gratchev, Vadim; Gray, Heather; Graziani, Enrico; Grebenyuk, Oleg; Greenwood, Zeno Dixon; Gregersen, Kristian; Gregor, Ingrid-Maria; Grenier, Philippe; Griffiths, Justin; Grigalashvili, Nugzar; Grillo, Alexander; Grimm, Kathryn; Grinstein, Sebastian; Gris, Philippe Luc Yves; Grishkevich, Yaroslav; Grivaz, Jean-Francois; Grohs, Johannes Philipp; Grohsjean, Alexander; Gross, Eilam; Grosse-Knetter, Joern; Grossi, Giulio Cornelio; Groth-Jensen, Jacob; Grout, Zara Jane; Grybel, Kai; Guan, Liang; Guescini, Francesco; Guest, Daniel; Gueta, Orel; Guicheney, Christophe; Guido, Elisa; Guillemin, Thibault; Guindon, Stefan; Gul, Umar; Gumpert, Christian; Gunther, Jaroslav; Guo, Jun; Gupta, Shaun; Gutierrez, Phillip; Gutierrez Ortiz, Nicolas Gilberto; Gutschow, Christian; Guttman, Nir; Guyot, Claude; Gwenlan, Claire; Gwilliam, Carl; Haas, Andy; Haber, Carl; Hadavand, Haleh Khani; Haddad, Nacim; Haefner, Petra; Hageboeck, Stephan; Hajduk, Zbigniew; Hakobyan, Hrachya; Haleem, Mahsana; Hall, David; Halladjian, Garabed; Hamacher, Klaus; Hamal, Petr; Hamano, Kenji; Hamer, Matthias; Hamilton, Andrew; Hamilton, Samuel; Hamnett, Phillip George; Han, Liang; Hanagaki, Kazunori; Hanawa, Keita; Hance, Michael; Hanke, Paul; Hansen, Jørgen Beck; Hansen, Jorn Dines; Hansen, Peter Henrik; Hara, Kazuhiko; Hard, Andrew; Harenberg, Torsten; Harkusha, Siarhei; Harper, Devin; Harrington, Robert; Harris, Orin; Harrison, Paul Fraser; Hartjes, Fred; Hasegawa, Satoshi; Hasegawa, Yoji; Hasib, A; Hassani, Samira; Haug, Sigve; Hauschild, Michael; Hauser, Reiner; Havranek, Miroslav; Hawkes, Christopher; Hawkings, Richard John; Hawkins, Anthony David; Hayashi, Takayasu; Hayden, Daniel; Hays, Chris; Hayward, Helen; Haywood, Stephen; Head, Simon; Heck, Tobias; Hedberg, Vincent; Heelan, Louise; Heim, Sarah; Heim, Timon; Heinemann, Beate; Heinrich, Lukas; Heisterkamp, Simon; Hejbal, Jiri; Helary, Louis; Heller, Claudio; Heller, Matthieu; Hellman, Sten; Hellmich, Dennis; Helsens, Clement; Henderson, James; Henderson, Robert; Hengler, Christopher; Henrichs, Anna; Henriques Correia, Ana Maria; Henrot-Versille, Sophie; Hensel, Carsten; Herbert, Geoffrey Henry; Hernández Jiménez, Yesenia; Herrberg-Schubert, Ruth; Herten, Gregor; Hertenberger, Ralf; Hervas, Luis; Hesketh, Gavin Grant; Hessey, Nigel; Hickling, Robert; Higón-Rodriguez, Emilio; Hill, Ewan; Hill, John; Hiller, Karl Heinz; Hillert, Sonja; Hillier, Stephen; Hinchliffe, Ian; Hines, Elizabeth; Hirose, Minoru; Hirschbuehl, Dominic; Hobbs, John; Hod, Noam; Hodgkinson, Mark; Hodgson, Paul; Hoecker, Andreas; Hoeferkamp, Martin; Hoffman, Julia; Hoffmann, Dirk; Hofmann, Julia Isabell; Hohlfeld, Marc; Holmes, Tova Ray; Hong, Tae Min; Hooft van Huysduynen, Loek; Hostachy, Jean-Yves; Hou, Suen; Hoummada, Abdeslam; Howard, Jacob; Howarth, James; Hrabovsky, Miroslav; Hristova, Ivana; Hrivnac, Julius; Hryn'ova, Tetiana; Hsu, Pai-hsien Jennifer; Hsu, Shih-Chieh; Hu, Diedi; Hu, Xueye; Huang, Yanping; Hubacek, Zdenek; Hubaut, Fabrice; Huegging, Fabian; Huffman, Todd Brian; Hughes, Emlyn; Hughes, Gareth; Huhtinen, Mika; Hülsing, Tobias Alexander; Hurwitz, Martina; Huseynov, Nazim; Huston, Joey; Huth, John; Iacobucci, Giuseppe; Iakovidis, Georgios; Ibragimov, Iskander; Iconomidou-Fayard, Lydia; Idarraga, John; Ideal, Emma; Iengo, Paolo; Igonkina, Olga; Iizawa, Tomoya; Ikegami, Yoichi; Ikematsu, Katsumasa; Ikeno, Masahiro; Iliadis, Dimitrios; Ilic, Nikolina; Inamaru, Yuki; Ince, Tayfun; Ioannou, Pavlos; Iodice, Mauro; Iordanidou, Kalliopi; Ippolito, Valerio; Irles Quiles, Adrian; Isaksson, Charlie; Ishino, Masaya; Ishitsuka, Masaki; Ishmukhametov, Renat; Issever, Cigdem; Istin, Serhat; Iturbe Ponce, Julia Mariana; Ivarsson, Jenny; Ivashin, Anton; Iwanski, Wieslaw; Iwasaki, Hiroyuki; Izen, Joseph; Izzo, Vincenzo; Jackson, Brett; Jackson, John; Jackson, Matthew; Jackson, Paul; Jaekel, Martin; Jain, Vivek; Jakobs, Karl; Jakobsen, Sune; Jakoubek, Tomas; Jakubek, Jan; Jamin, David Olivier; Jana, Dilip; Jansen, Eric; Jansen, Hendrik; Janssen, Jens; Janus, Michel; Jarlskog, Göran; Javadov, Namig; Javůrek, Tomáš; Jeanty, Laura; Jeng, Geng-yuan; Jennens, David; Jenni, Peter; Jentzsch, Jennifer; Jeske, Carl; Jézéquel, Stéphane; Ji, Haoshuang; Ji, Weina; Jia, Jiangyong; Jiang, Yi; Jimenez Belenguer, Marcos; Jin, Shan; Jinaru, Adam; Jinnouchi, Osamu; Joergensen, Morten Dam; Johansson, Erik; Johansson, Per; Johns, Kenneth; Jon-And, Kerstin; Jones, Graham; Jones, Roger; Jones, Tim; Jongmanns, Jan; Jorge, Pedro; Joseph, John; Joshi, Kiran Daniel; Jovicevic, Jelena; Ju, Xiangyang; Jung, Christian; Jungst, Ralph Markus; Jussel, Patrick; Juste Rozas, Aurelio; Kaci, Mohammed; Kaczmarska, Anna; Kado, Marumi; Kagan, Harris; Kagan, Michael; Kajomovitz, Enrique; Kama, Sami; Kanaya, Naoko; Kaneda, Michiru; Kaneti, Steven; Kanno, Takayuki; Kantserov, Vadim; Kanzaki, Junichi; Kaplan, Benjamin; Kapliy, Anton; Kar, Deepak; Karakostas, Konstantinos; Karastathis, Nikolaos; Karnevskiy, Mikhail; Karpov, Sergey; Karthik, Krishnaiyengar; Kartvelishvili, Vakhtang; Karyukhin, Andrey; Kashif, Lashkar; Kasieczka, Gregor; Kass, Richard; Kastanas, Alex; Kataoka, Yousuke; Katre, Akshay; Katzy, Judith; Kaushik, Venkatesh; Kawagoe, Kiyotomo; Kawamoto, Tatsuo; Kawamura, Gen; Kazama, Shingo; Kazanin, Vassili; Kazarinov, Makhail; Keeler, Richard; Keener, Paul; Kehoe, Robert; Keil, Markus; Keller, John; Keoshkerian, Houry; Kepka, Oldrich; Kerševan, Borut Paul; Kersten, Susanne; Kessoku, Kohei; Keung, Justin; Khalil-zada, Farkhad; Khandanyan, Hovhannes; Khanov, Alexander; Khodinov, Alexander; Khomich, Andrei; Khoo, Teng Jian; Khoriauli, Gia; Khoroshilov, Andrey; Khovanskiy, Valery; Khramov, Evgeniy; Khubua, Jemal; Kim, Hee Yeun; Kim, Hyeon Jin; Kim, Shinhong; Kimura, Naoki; Kind, Oliver; King, Barry; King, Matthew; King, Robert Steven Beaufoy; King, Samuel Burton; Kirk, Julie; Kiryunin, Andrey; Kishimoto, Tomoe; Kisielewska, Danuta; Kiss, Florian; Kitamura, Takumi; Kittelmann, Thomas; Kiuchi, Kenji; Kladiva, Eduard; Klein, Max; Klein, Uta; Kleinknecht, Konrad; Klimek, Pawel; Klimentov, Alexei; Klingenberg, Reiner; Klinger, Joel Alexander; Klioutchnikova, Tatiana; Klok, Peter; Kluge, Eike-Erik; Kluit, Peter; Kluth, Stefan; Kneringer, Emmerich; Knoops, Edith; Knue, Andrea; Kobayashi, Tomio; Kobel, Michael; Kocian, Martin; Kodys, Peter; Koevesarki, Peter; Koffas, Thomas; Koffeman, Els; Kogan, Lucy Anne; Kohlmann, Simon; Kohout, Zdenek; Kohriki, Takashi; Koi, Tatsumi; Kolanoski, Hermann; Koletsou, Iro; Koll, James; Komar, Aston; Komori, Yuto; Kondo, Takahiko; Kondrashova, Nataliia; Köneke, Karsten; König, Adriaan; König, Sebastian; Kono, Takanori; Konoplich, Rostislav; Konstantinidis, Nikolaos; Kopeliansky, Revital; Koperny, Stefan; Köpke, Lutz; Kopp, Anna Katharina; Korcyl, Krzysztof; Kordas, Kostantinos; Korn, Andreas; Korol, Aleksandr; Korolkov, Ilya; Korolkova, Elena; Korotkov, Vladislav; Kortner, Oliver; Kortner, Sandra; Kostyukhin, Vadim; Kotov, Sergey; Kotov, Vladislav; Kotwal, Ashutosh; Kourkoumelis, Christine; Kouskoura, Vasiliki; Koutsman, Alex; Kowalewski, Robert Victor; Kowalski, Tadeusz; Kozanecki, Witold; Kozhin, Anatoly; Kral, Vlastimil; Kramarenko, Viktor; Kramberger, Gregor; Krasnopevtsev, Dimitriy; Krasny, Mieczyslaw Witold; Krasznahorkay, Attila; Kraus, Jana; Kravchenko, Anton; Kreiss, Sven; Kretz, Moritz; Kretzschmar, Jan; Kreutzfeldt, Kristof; Krieger, Peter; Kroeninger, Kevin; Kroha, Hubert; Kroll, Joe; Kroseberg, Juergen; Krstic, Jelena; Kruchonak, Uladzimir; Krüger, Hans; Kruker, Tobias; Krumnack, Nils; Krumshteyn, Zinovii; Kruse, Amanda; Kruse, Mark; Kruskal, Michael; Kubik, Petr; Kubota, Takashi; Kuday, Sinan; Kuehn, Susanne; Kugel, Andreas; Kuhl, Andrew; Kuhl, Thorsten; Kukhtin, Victor; Kulchitsky, Yuri; Kuleshov, Sergey; Kuna, Marine; Kunkle, Joshua; Kupco, Alexander; Kurashige, Hisaya; Kurochkin, Yurii; Kurumida, Rie; Kus, Vlastimil; Kuwertz, Emma Sian; Kuze, Masahiro; Kvita, Jiri; La Rosa, Alessandro; La Rotonda, Laura; Lacasta, Carlos; Lacava, Francesco; Lacey, James; Lacker, Heiko; Lacour, Didier; Lacuesta, Vicente Ramón; Ladygin, Evgueni; Lafaye, Remi; Laforge, Bertrand; Lagouri, Theodota; Lai, Stanley; Laier, Heiko; Lambourne, Luke; Lammers, Sabine; Lampen, Caleb; Lampl, Walter; Lançon, Eric; Landgraf, Ulrich; Landon, Murrough; Lang, Valerie Susanne; Lange, Clemens; Lankford, Andrew; Lanni, Francesco; Lantzsch, Kerstin; Laplace, Sandrine; Lapoire, Cecile; Laporte, Jean-Francois; Lari, Tommaso; Lassnig, Mario; Laurelli, Paolo; Lavrijsen, Wim; Law, Alexander; Laycock, Paul; Le, Bao Tran; Le Dortz, Olivier; Le Guirriec, Emmanuel; Le Menedeu, Eve; LeCompte, Thomas; Ledroit-Guillon, Fabienne Agnes Marie; Lee, Claire Alexandra; Lee, Hurng-Chun; Lee, Jason; Lee, Shih-Chang; Lee, Lawrence; Lefebvre, Guillaume; Lefebvre, Michel; Legger, Federica; Leggett, Charles; Lehan, Allan; Lehmacher, Marc; Lehmann Miotto, Giovanna; Lei, Xiaowen; Leister, Andrew Gerard; Leite, Marco Aurelio Lisboa; Leitner, Rupert; Lellouch, Daniel; Lemmer, Boris; Leney, Katharine; Lenz, Tatjana; Lenzen, Georg; Lenzi, Bruno; Leone, Robert; Leonhardt, Kathrin; Leontsinis, Stefanos; Leroy, Claude; Lester, Christopher; Lester, Christopher Michael; Levchenko, Mikhail; Levêque, Jessica; Levin, Daniel; Levinson, Lorne; Levy, Mark; Lewis, Adrian; Lewis, George; Leyko, Agnieszka; Leyton, Michael; Li, Bing; Li, Bo; Li, Haifeng; Li, Ho Ling; Li, Liang; Li, Shu; Li, Yichen; Liang, Zhijun; Liao, Hongbo; Liberti, Barbara; Lichard, Peter; Lie, Ki; Liebal, Jessica; Liebig, Wolfgang; Limbach, Christian; Limosani, Antonio; Limper, Maaike; Lin, Simon; Linde, Frank; Lindquist, Brian Edward; Linnemann, James; Lipeles, Elliot; Lipniacka, Anna; Lisovyi, Mykhailo; Liss, Tony; Lissauer, David; Lister, Alison; Litke, Alan; Liu, Bo; Liu, Dong; Liu, Jianbei; Liu, Kun; Liu, Lulu; Liu, Miaoyuan; Liu, Minghui; Liu, Yanwen; Livan, Michele; Livermore, Sarah; Lleres, Annick; Llorente Merino, Javier; Lloyd, Stephen; Lo Sterzo, Francesco; Lobodzinska, Ewelina; Loch, Peter; Lockman, William; Loddenkoetter, Thomas; Loebinger, Fred; Loevschall-Jensen, Ask Emil; Loginov, Andrey; Loh, Chang Wei; Lohse, Thomas; Lohwasser, Kristin; Lokajicek, Milos; Lombardo, Vincenzo Paolo; Long, Brian Alexander; Long, Jonathan; Long, Robin Eamonn; Lopes, Lourenco; Lopez Mateos, David; Lopez Paredes, Brais; Lorenz, Jeanette; Lorenzo Martinez, Narei; Losada, Marta; Loscutoff, Peter; Lou, XinChou; Lounis, Abdenour; Love, Jeremy; Love, Peter; Lowe, Andrew; Lu, Feng; Lubatti, Henry; Luci, Claudio; Lucotte, Arnaud; Luehring, Frederick; Lukas, Wolfgang; Luminari, Lamberto; Lundberg, Olof; Lund-Jensen, Bengt; Lungwitz, Matthias; Lynn, David; Lysak, Roman; Lytken, Else; Ma, Hong; Ma, Lian Liang; Maccarrone, Giovanni; Macchiolo, Anna; Machado Miguens, Joana; Macina, Daniela; Madaffari, Daniele; Madar, Romain; Maddocks, Harvey Jonathan; Mader, Wolfgang; Madsen, Alexander; Maeno, Mayuko; Maeno, Tadashi; Magradze, Erekle; Mahboubi, Kambiz; Mahlstedt, Joern; Mahmoud, Sara; Maiani, Camilla; Maidantchik, Carmen; Maio, Amélia; Majewski, Stephanie; Makida, Yasuhiro; Makovec, Nikola; Mal, Prolay; Malaescu, Bogdan; Malecki, Pawel; Maleev, Victor; Malek, Fairouz; Mallik, Usha; Malon, David; Malone, Caitlin; Maltezos, Stavros; Malyshev, Vladimir; Malyukov, Sergei; Mamuzic, Judita; Mandelli, Beatrice; Mandelli, Luciano; Mandić, Igor; Mandrysch, Rocco; Maneira, José; Manfredini, Alessandro; Manhaes de Andrade Filho, Luciano; Manjarres Ramos, Joany Andreina; Mann, Alexander; Manning, Peter; Manousakis-Katsikakis, Arkadios; Mansoulie, Bruno; Mantifel, Rodger; Mapelli, Livio; March, Luis; Marchand, Jean-Francois; Marchiori, Giovanni; Marcisovsky, Michal; Marino, Christopher; Marques, Carlos; Marroquim, Fernando; Marsden, Stephen Philip; Marshall, Zach; Marti, Lukas Fritz; Marti-Garcia, Salvador; Martin, Brian; Martin, Brian Thomas; Martin, Jean-Pierre; Martin, Tim; Martin, Victoria Jane; Martin dit Latour, Bertrand; Martinez, Homero; Martinez, Mario; Martin-Haugh, Stewart; Martyniuk, Alex; Marx, Marilyn; Marzano, Francesco; Marzin, Antoine; Masetti, Lucia; Mashimo, Tetsuro; Mashinistov, Ruslan; Masik, Jiri; Maslennikov, Alexey; Massa, Ignazio; Massol, Nicolas; Mastrandrea, Paolo; Mastroberardino, Anna; Masubuchi, Tatsuya; Matricon, Pierre; Matsunaga, Hiroyuki; Matsushita, Takashi; Mättig, Peter; Mättig, Stefan; Mattmann, Johannes; Maurer, Julien; Maxfield, Stephen; Maximov, Dmitriy; Mazini, Rachid; Mazzaferro, Luca; Mc Goldrick, Garrin; Mc Kee, Shawn Patrick; McCarn, Allison; McCarthy, Robert; McCarthy, Tom; McCubbin, Norman; McFarlane, Kenneth; Mcfayden, Josh; Mchedlidze, Gvantsa; Mclaughlan, Tom; McMahon, Steve; McPherson, Robert; Meade, Andrew; Mechnich, Joerg; Medinnis, Michael; Meehan, Samuel; Mehlhase, Sascha; Mehta, Andrew; Meier, Karlheinz; Meineck, Christian; Meirose, Bernhard; Melachrinos, Constantinos; Mellado Garcia, Bruce Rafael; Meloni, Federico; Mengarelli, Alberto; Menke, Sven; Meoni, Evelin; Mercurio, Kevin Michael; Mergelmeyer, Sebastian; Meric, Nicolas; Mermod, Philippe; Merola, Leonardo; Meroni, Chiara; Merritt, Frank; Merritt, Hayes; Messina, Andrea; Metcalfe, Jessica; Mete, Alaettin Serhan; Meyer, Carsten; Meyer, Christopher; Meyer, Jean-Pierre; Meyer, Jochen; Middleton, Robin; Migas, Sylwia; Mijović, Liza; Mikenberg, Giora; Mikestikova, Marcela; Mikuž, Marko; Miller, David; Mills, Corrinne; Milov, Alexander; Milstead, David; Milstein, Dmitry; Minaenko, Andrey; Miñano Moya, Mercedes; Minashvili, Irakli; Mincer, Allen; Mindur, Bartosz; Mineev, Mikhail; Ming, Yao; Mir, Lluisa-Maria; Mirabelli, Giovanni; Mitani, Takashi; Mitrevski, Jovan; Mitsou, Vasiliki A; Mitsui, Shingo; Miucci, Antonio; Miyagawa, Paul; Mjörnmark, Jan-Ulf; Moa, Torbjoern; Mochizuki, Kazuya; Moeller, Victoria; Mohapatra, Soumya; Mohr, Wolfgang; Molander, Simon; Moles-Valls, Regina; Mönig, Klaus; Monini, Caterina; Monk, James; Monnier, Emmanuel; Montejo Berlingen, Javier; Monticelli, Fernando; Monzani, Simone; Moore, Roger; Moraes, Arthur; Morange, Nicolas; Morel, Julien; Moreno, Deywis; Moreno Llácer, María; Morettini, Paolo; Morgenstern, Marcus; Morii, Masahiro; Moritz, Sebastian; Morley, Anthony Keith; Mornacchi, Giuseppe; Morris, John; Morvaj, Ljiljana; Moser, Hans-Guenther; Mosidze, Maia; Moss, Josh; Mount, Richard; Mountricha, Eleni; Mouraviev, Sergei; Moyse, Edward; Muanza, Steve; Mudd, Richard; Mueller, Felix; Mueller, James; Mueller, Klemens; Mueller, Thibaut; Mueller, Timo; Muenstermann, Daniel; Munwes, Yonathan; Murillo Quijada, Javier Alberto; Murray, Bill; Musheghyan, Haykuhi; Musto, Elisa; Myagkov, Alexey; Myska, Miroslav; Nackenhorst, Olaf; Nadal, Jordi; Nagai, Koichi; Nagai, Ryo; Nagai, Yoshikazu; Nagano, Kunihiro; Nagarkar, Advait; Nagasaka, Yasushi; Nagel, Martin; Nairz, Armin Michael; Nakahama, Yu; Nakamura, Koji; Nakamura, Tomoaki; Nakano, Itsuo; Namasivayam, Harisankar; Nanava, Gizo; Narayan, Rohin; Nattermann, Till; Naumann, Thomas; Navarro, Gabriela; Nayyar, Ruchika; Neal, Homer; Nechaeva, Polina; Neep, Thomas James; Negri, Andrea; Negri, Guido; Negrini, Matteo; Nektarijevic, Snezana; Nelson, Andrew; Nelson, Timothy Knight; Nemecek, Stanislav; Nemethy, Peter; Nepomuceno, Andre Asevedo; Nessi, Marzio; Neubauer, Mark; Neumann, Manuel; Neves, Ricardo; Nevski, Pavel; Newcomer, Mitchel; Newman, Paul; Nguyen, Duong Hai; Nickerson, Richard; Nicolaidou, Rosy; Nicquevert, Bertrand; Nielsen, Jason; Nikiforou, Nikiforos; Nikiforov, Andriy; Nikolaenko, Vladimir; Nikolic-Audit, Irena; Nikolics, Katalin; Nikolopoulos, Konstantinos; Nilsson, Paul; Ninomiya, Yoichi; Nisati, Aleandro; Nisius, Richard; Nobe, Takuya; Nodulman, Lawrence; Nomachi, Masaharu; Nomidis, Ioannis; Norberg, Scarlet; Nordberg, Markus; Nowak, Sebastian; Nozaki, Mitsuaki; Nozka, Libor; Ntekas, Konstantinos; Nunes Hanninger, Guilherme; Nunnemann, Thomas; Nurse, Emily; Nuti, Francesco; O'Brien, Brendan Joseph; O'grady, Fionnbarr; O'Neil, Dugan; O'Shea, Val; Oakham, Gerald; Oberlack, Horst; Obermann, Theresa; Ocariz, Jose; Ochi, Atsuhiko; Ochoa, Ines; Oda, Susumu; Odaka, Shigeru; Ogren, Harold; Oh, Alexander; Oh, Seog; Ohm, Christian; Ohman, Henrik; Ohshima, Takayoshi; Okamura, Wataru; Okawa, Hideki; Okumura, Yasuyuki; Okuyama, Toyonobu; Olariu, Albert; Olchevski, Alexander; Olivares Pino, Sebastian Andres; Oliveira Damazio, Denis; Oliver Garcia, Elena; Olszewski, Andrzej; Olszowska, Jolanta; Onofre, António; Onyisi, Peter; Oram, Christopher; Oreglia, Mark; Oren, Yona; Orestano, Domizia; Orlando, Nicola; Oropeza Barrera, Cristina; Orr, Robert; Osculati, Bianca; Ospanov, Rustem; Otero y Garzon, Gustavo; Otono, Hidetoshi; Ouchrif, Mohamed; Ouellette, Eric; Ould-Saada, Farid; Ouraou, Ahmimed; Oussoren, Koen Pieter; Ouyang, Qun; Ovcharova, Ana; Owen, Mark; Ozcan, Veysi Erkcan; Ozturk, Nurcan; Pachal, Katherine; Pacheco Pages, Andres; Padilla Aranda, Cristobal; Pagáčová, Martina; Pagan Griso, Simone; Paganis, Efstathios; Pahl, Christoph; Paige, Frank; Pais, Preema; Pajchel, Katarina; Palacino, Gabriel; Palestini, Sandro; Pallin, Dominique; Palma, Alberto; Palmer, Jody; Pan, Yibin; Panagiotopoulou, Evgenia; Panduro Vazquez, William; Pani, Priscilla; Panikashvili, Natalia; Panitkin, Sergey; Pantea, Dan; Paolozzi, Lorenzo; Papadopoulou, Theodora; Papageorgiou, Konstantinos; Paramonov, Alexander; Paredes Hernandez, Daniela; Parker, Michael Andrew; Parodi, Fabrizio; Parsons, John; Parzefall, Ulrich; Pasqualucci, Enrico; Passaggio, Stefano; Passeri, Antonio; Pastore, Fernanda; Pastore, Francesca; Pásztor, Gabriella; Pataraia, Sophio; Patel, Nikhul; Pater, Joleen; Patricelli, Sergio; Pauly, Thilo; Pearce, James; Pedersen, Maiken; Pedraza Lopez, Sebastian; Pedro, Rute; Peleganchuk, Sergey; Pelikan, Daniel; Peng, Haiping; Penning, Bjoern; Penwell, John; Perepelitsa, Dennis; Perez Codina, Estel; Pérez García-Estañ, María Teresa; Perez Reale, Valeria; Perini, Laura; Pernegger, Heinz; Perrino, Roberto; Peschke, Richard; Peshekhonov, Vladimir; Peters, Krisztian; Peters, Yvonne; Petersen, Brian; Petersen, Jorgen; Petersen, Troels; Petit, Elisabeth; Petridis, Andreas; Petridou, Chariclia; Petrolo, Emilio; Petrucci, Fabrizio; Petteni, Michele; Pettersson, Nora Emilia; Pezoa, Raquel; Phillips, Peter William; Piacquadio, Giacinto; Pianori, Elisabetta; Picazio, Attilio; Piccaro, Elisa; Piccinini, Maurizio; Piegaia, Ricardo; Pieron, Jacek Piotr; Pignotti, David; Pilcher, James; Pilkington, Andrew; Pina, João Antonio; Pinamonti, Michele; Pinder, Alex; Pinfold, James; Pingel, Almut; Pinto, Belmiro; Pires, Sylvestre; Pitt, Michael; Pizio, Caterina; Pleier, Marc-Andre; Pleskot, Vojtech; Plotnikova, Elena; Plucinski, Pawel; Poddar, Sahill; Podlyski, Fabrice; Poettgen, Ruth; Poggioli, Luc; Pohl, David-leon; Pohl, Martin; Polesello, Giacomo; Policicchio, Antonio; Polifka, Richard; Polini, Alessandro; Pollard, Christopher Samuel; Polychronakos, Venetios; Pommès, Kathy; Pontecorvo, Ludovico; Pope, Bernard; Popeneciu, Gabriel Alexandru; Popovic, Dragan; Poppleton, Alan; Portell Bueso, Xavier; Pospelov, Guennady; Pospisil, Stanislav; Potamianos, Karolos; Potrap, Igor; Potter, Christina; Potter, Christopher; Poulard, Gilbert; Poveda, Joaquin; Pozdnyakov, Valery; Pralavorio, Pascal; Pranko, Aliaksandr; Prasad, Srivas; Pravahan, Rishiraj; Prell, Soeren; Price, Darren; Price, Joe; Price, Lawrence; Prieur, Damien; Primavera, Margherita; Proissl, Manuel; Prokofiev, Kirill; Prokoshin, Fedor; Protopapadaki, Eftychia-sofia; Protopopescu, Serban; Proudfoot, James; Przybycien, Mariusz; Przysiezniak, Helenka; Ptacek, Elizabeth; Pueschel, Elisa; Puldon, David; Purohit, Milind; Puzo, Patrick; Qian, Jianming; Qin, Gang; Qin, Yang; Quadt, Arnulf; Quarrie, David; Quayle, William; Quilty, Donnchadha; Qureshi, Anum; Radeka, Veljko; Radescu, Voica; Radhakrishnan, Sooraj Krishnan; Radloff, Peter; Rados, Pere; Ragusa, Francesco; Rahal, Ghita; Rajagopalan, Srinivasan; Rammensee, Michael; Randle-Conde, Aidan Sean; Rangel-Smith, Camila; Rao, Kanury; Rauscher, Felix; Rave, Tobias Christian; Ravenscroft, Thomas; Raymond, Michel; Read, Alexander Lincoln; Rebuzzi, Daniela; Redelbach, Andreas; Redlinger, George; Reece, Ryan; Reeves, Kendall; Rehnisch, Laura; Reinsch, Andreas; Reisin, Hernan; Relich, Matthew; Rembser, Christoph; Ren, Zhongliang; Renaud, Adrien; Rescigno, Marco; Resconi, Silvia; Resende, Bernardo; Rezanova, Olga; Reznicek, Pavel; Rezvani, Reyhaneh; Richter, Robert; Ridel, Melissa; Rieck, Patrick; Rijssenbeek, Michael; Rimoldi, Adele; Rinaldi, Lorenzo; Ritsch, Elmar; Riu, Imma; Rizatdinova, Flera; Rizvi, Eram; Robertson, Steven; Robichaud-Veronneau, Andree; Robinson, Dave; Robinson, James; Robson, Aidan; Roda, Chiara; Rodrigues, Luis; Roe, Shaun; Røhne, Ole; Rolli, Simona; Romaniouk, Anatoli; Romano, Marino; Romeo, Gaston; Romero Adam, Elena; Rompotis, Nikolaos; Roos, Lydia; Ros, Eduardo; Rosati, Stefano; Rosbach, Kilian; Rose, Matthew; Rosendahl, Peter Lundgaard; Rosenthal, Oliver; Rossetti, Valerio; Rossi, Elvira; Rossi, Leonardo Paolo; Rosten, Rachel; Rotaru, Marina; Roth, Itamar; Rothberg, Joseph; Rousseau, David; Royon, Christophe; Rozanov, Alexandre; Rozen, Yoram; Ruan, Xifeng; Rubbo, Francesco; Rubinskiy, Igor; Rud, Viacheslav; Rudolph, Christian; Rudolph, Matthew Scott; Rühr, Frederik; Ruiz-Martinez, Aranzazu; Rurikova, Zuzana; Rusakovich, Nikolai; Ruschke, Alexander; Rutherfoord, John; Ruthmann, Nils; Ryabov, Yury; Rybar, Martin; Rybkin, Grigori; Ryder, Nick; Saavedra, Aldo; Sacerdoti, Sabrina; Saddique, Asif; Sadeh, Iftach; Sadrozinski, Hartmut; Sadykov, Renat; Safai Tehrani, Francesco; Sakamoto, Hiroshi; Sakurai, Yuki; Salamanna, Giuseppe; Salamon, Andrea; Saleem, Muhammad; Salek, David; Sales De Bruin, Pedro Henrique; Salihagic, Denis; Salnikov, Andrei; Salt, José; Salvachua Ferrando, Belén; Salvatore, Daniela; Salvatore, Pasquale Fabrizio; Salvucci, Antonio; Salzburger, Andreas; Sampsonidis, Dimitrios; Sanchez, Arturo; Sánchez, Javier; Sanchez Martinez, Victoria; Sandaker, Heidi; Sandbach, Ruth Laura; Sander, Heinz Georg; Sanders, Michiel; Sandhoff, Marisa; Sandoval, Tanya; Sandoval, Carlos; Sandstroem, Rikard; Sankey, Dave; Sansoni, Andrea; Santoni, Claudio; Santonico, Rinaldo; Santos, Helena; Santoyo Castillo, Itzebelt; Sapp, Kevin; Sapronov, Andrey; Saraiva, João; Sarrazin, Bjorn; Sartisohn, Georg; Sasaki, Osamu; Sasaki, Yuichi; Satsounkevitch, Igor; Sauvage, Gilles; Sauvan, Emmanuel; Savard, Pierre; Savu, Dan Octavian; Sawyer, Craig; Sawyer, Lee; Saxon, James; Sbarra, Carla; Sbrizzi, Antonio; Scanlon, Tim; Scannicchio, Diana; Scarcella, Mark; Schaarschmidt, Jana; Schacht, Peter; Schaefer, Douglas; Schaefer, Ralph; Schaepe, Steffen; Schaetzel, Sebastian; Schäfer, Uli; Schaffer, Arthur; Schaile, Dorothee; Schamberger, R. Dean; Scharf, Veit; Schegelsky, Valery; Scheirich, Daniel; Schernau, Michael; Scherzer, Max; Schiavi, Carlo; Schieck, Jochen; Schillo, Christian; Schioppa, Marco; Schlenker, Stefan; Schmidt, Evelyn; Schmieden, Kristof; Schmitt, Christian; Schmitt, Christopher; Schmitt, Sebastian; Schneider, Basil; Schnellbach, Yan Jie; Schnoor, Ulrike; Schoeffel, Laurent; Schoening, Andre; Schoenrock, Bradley Daniel; Schorlemmer, Andre Lukas; Schott, Matthias; Schouten, Doug; Schovancova, Jaroslava; Schram, Malachi; Schramm, Steven; Schreyer, Manuel; Schroeder, Christian; Schuh, Natascha; Schultens, Martin Johannes; Schultz-Coulon, Hans-Christian; Schulz, Holger; Schumacher, Markus; Schumm, Bruce; Schune, Philippe; Schwartzman, Ariel; Schwegler, Philipp; Schwemling, Philippe; Schwienhorst, Reinhard; Schwindling, Jerome; Schwindt, Thomas; Schwoerer, Maud; Sciacca, Gianfranco; Scifo, Estelle; Sciolla, Gabriella; Scott, Bill; Scuri, Fabrizio; Scutti, Federico; Searcy, Jacob; Sedov, George; Sedykh, Evgeny; Seidel, Sally; Seiden, Abraham; Seifert, Frank; Seixas, José; Sekhniaidze, Givi; Sekula, Stephen; Selbach, Karoline Elfriede; Seliverstov, Dmitry; Sellers, Graham; Semprini-Cesari, Nicola; Serfon, Cedric; Serin, Laurent; Serkin, Leonid; Serre, Thomas; Seuster, Rolf; Severini, Horst; Sforza, Federico; Sfyrla, Anna; Shabalina, Elizaveta; Shamim, Mansoora; Shan, Lianyou; Shank, James; Shao, Qi Tao; Shapiro, Marjorie; Shatalov, Pavel; Shaw, Kate; Shaw, Rick; Sherwood, Peter; Shimizu, Shima; Shimmin, Chase Owen; Shimojima, Makoto; Shiyakova, Mariya; Shmeleva, Alevtina; Shochet, Mel; Short, Daniel; Shrestha, Suyog; Shulga, Evgeny; Shupe, Michael; Shushkevich, Stanislav; Sicho, Petr; Sidorov, Dmitri; Sidoti, Antonio; Siegert, Frank; Sijacki, Djordje; Silbert, Ohad; Silva, José; Silver, Yiftah; Silverstein, Daniel; Silverstein, Samuel; Simak, Vladislav; Simard, Olivier; Simic, Ljiljana; Simion, Stefan; Simioni, Eduard; Simmons, Brinick; Simoniello, Rosa; Simonyan, Margar; Sinervo, Pekka; Sinev, Nikolai; Sipica, Valentin; Siragusa, Giovanni; Sircar, Anirvan; Sisakyan, Alexei; Sivoklokov, Serguei; Sjölin, Jörgen; Sjursen, Therese; Skottowe, Hugh Philip; Skovpen, Kirill; Skubic, Patrick; Slater, Mark; Slavicek, Tomas; Sliwa, Krzysztof; Smakhtin, Vladimir; Smart, Ben; Smestad, Lillian; Smirnov, Sergei; Smirnov, Yury; Smirnova, Lidia; Smirnova, Oxana; Smizanska, Maria; Smolek, Karel; Snesarev, Andrei; Snidero, Giacomo; Snow, Joel; Snyder, Scott; Sobie, Randall; Socher, Felix; Sodomka, Jaromir; Soffer, Abner; Soh, Dart-yin; Solans, Carlos; Solar, Michael; Solc, Jaroslav; Soldatov, Evgeny; Soldevila, Urmila; Solfaroli Camillocci, Elena; Solodkov, Alexander; Solovyanov, Oleg; Solovyev, Victor; Sommer, Philip; Song, Hong Ye; Soni, Nitesh; Sood, Alexander; Sopczak, Andre; Sopko, Vit; Sopko, Bruno; Sorin, Veronica; Sosebee, Mark; Soualah, Rachik; Soueid, Paul; Soukharev, Andrey; South, David; Spagnolo, Stefania; Spanò, Francesco; Spearman, William Robert; Spighi, Roberto; Spigo, Giancarlo; Spousta, Martin; Spreitzer, Teresa; Spurlock, Barry; St Denis, Richard Dante; Staerz, Steffen; Stahlman, Jonathan; Stamen, Rainer; Stanecka, Ewa; Stanek, Robert; Stanescu, Cristian; Stanescu-Bellu, Madalina; Stanitzki, Marcel Michael; Stapnes, Steinar; Starchenko, Evgeny; Stark, Jan; Staroba, Pavel; Starovoitov, Pavel; Staszewski, Rafal; Stavina, Pavel; Steele, Genevieve; Steinberg, Peter; Stekl, Ivan; Stelzer, Bernd; Stelzer, Harald Joerg; Stelzer-Chilton, Oliver; Stenzel, Hasko; Stern, Sebastian; Stewart, Graeme; Stillings, Jan Andre; Stockton, Mark; Stoebe, Michael; Stoicea, Gabriel; Stolte, Philipp; Stonjek, Stefan; Stradling, Alden; Straessner, Arno; Stramaglia, Maria Elena; Strandberg, Jonas; Strandberg, Sara; Strandlie, Are; Strauss, Emanuel; Strauss, Michael; Strizenec, Pavol; Ströhmer, Raimund; Strom, David; Stroynowski, Ryszard; Stucci, Stefania Antonia; Stugu, Bjarne; Styles, Nicholas Adam; Su, Dong; Su, Jun; Subramania, Halasya Siva; Subramaniam, Rajivalochan; Succurro, Antonella; Sugaya, Yorihito; Suhr, Chad; Suk, Michal; Sulin, Vladimir; Sultansoy, Saleh; Sumida, Toshi; Sun, Xiaohu; Sundermann, Jan Erik; Suruliz, Kerim; Susinno, Giancarlo; Sutton, Mark; Suzuki, Yu; Svatos, Michal; Swedish, Stephen; Swiatlowski, Maximilian; Sykora, Ivan; Sykora, Tomas; Ta, Duc; Tackmann, Kerstin; Taenzer, Joe; Taffard, Anyes; Tafirout, Reda; Taiblum, Nimrod; Takahashi, Yuta; Takai, Helio; Takashima, Ryuichi; Takeda, Hiroshi; Takeshita, Tohru; Takubo, Yosuke; Talby, Mossadek; Talyshev, Alexey; Tam, Jason; Tamsett, Matthew; Tan, Kong Guan; Tanaka, Junichi; Tanaka, Reisaburo; Tanaka, Satoshi; Tanaka, Shuji; Tanasijczuk, Andres Jorge; Tani, Kazutoshi; Tannoury, Nancy; Tapprogge, Stefan; Tarem, Shlomit; Tarrade, Fabien; Tartarelli, Giuseppe Francesco; Tas, Petr; Tasevsky, Marek; Tashiro, Takuya; Tassi, Enrico; Tavares Delgado, Ademar; Tayalati, Yahya; Taylor, Frank; Taylor, Geoffrey; Taylor, Wendy; Teischinger, Florian Alfred; Teixeira Dias Castanheira, Matilde; Teixeira-Dias, Pedro; Temming, Kim Katrin; Ten Kate, Herman; Teng, Ping-Kun; Terada, Susumu; Terashi, Koji; Terron, Juan; Terzo, Stefano; Testa, Marianna; Teuscher, Richard; Therhaag, Jan; Theveneaux-Pelzer, Timothée; Thoma, Sascha; Thomas, Juergen; Thomas-Wilsker, Joshuha; Thompson, Emily; Thompson, Paul; Thompson, Peter; Thompson, Stan; Thomsen, Lotte Ansgaard; Thomson, Evelyn; Thomson, Mark; Thong, Wai Meng; Thun, Rudolf; Tian, Feng; Tibbetts, Mark James; Tikhomirov, Vladimir; Tikhonov, Yury; Timoshenko, Sergey; Tiouchichine, Elodie; Tipton, Paul; Tisserant, Sylvain; Todorov, Theodore; Todorova-Nova, Sharka; Toggerson, Brokk; Tojo, Junji; Tokár, Stanislav; Tokushuku, Katsuo; Tollefson, Kirsten; Tomlinson, Lee; Tomoto, Makoto; Tompkins, Lauren; Toms, Konstantin; Topilin, Nikolai; Torrence, Eric; Torres, Heberth; Torró Pastor, Emma; Toth, Jozsef; Touchard, Francois; Tovey, Daniel; Tran, Huong Lan; Trefzger, Thomas; Tremblet, Louis; Tricoli, Alessandro; Trigger, Isabel Marian; Trincaz-Duvoid, Sophie; Tripiana, Martin; Triplett, Nathan; Trischuk, William; Trocmé, Benjamin; Troncon, Clara; Trottier-McDonald, Michel; Trovatelli, Monica; True, Patrick; Trzebinski, Maciej; Trzupek, Adam; Tsarouchas, Charilaos; Tseng, Jeffrey; Tsiareshka, Pavel; Tsionou, Dimitra; Tsipolitis, Georgios; Tsirintanis, Nikolaos; Tsiskaridze, Shota; Tsiskaridze, Vakhtang; Tskhadadze, Edisher; Tsukerman, Ilya; Tsulaia, Vakhtang; Tsuno, Soshi; Tsybychev, Dmitri; Tudorache, Alexandra; Tudorache, Valentina; Tuna, Alexander Naip; Tupputi, Salvatore; Turchikhin, Semen; Turecek, Daniel; Turk Cakir, Ilkay; Turra, Ruggero; Tuts, Michael; Tykhonov, Andrii; Tylmad, Maja; Tyndel, Mike; Uchida, Kirika; Ueda, Ikuo; Ueno, Ryuichi; Ughetto, Michael; Ugland, Maren; Uhlenbrock, Mathias; Ukegawa, Fumihiko; Unal, Guillaume; Undrus, Alexander; Unel, Gokhan; Ungaro, Francesca; Unno, Yoshinobu; Urbaniec, Dustin; Urquijo, Phillip; Usai, Giulio; Usanova, Anna; Vacavant, Laurent; Vacek, Vaclav; Vachon, Brigitte; Valencic, Nika; Valentinetti, Sara; Valero, Alberto; Valery, Loic; Valkar, Stefan; Valladolid Gallego, Eva; Vallecorsa, Sofia; Valls Ferrer, Juan Antonio; Van Berg, Richard; Van Der Deijl, Pieter; van der Geer, Rogier; van der Graaf, Harry; Van Der Leeuw, Robin; van der Ster, Daniel; van Eldik, Niels; van Gemmeren, Peter; Van Nieuwkoop, Jacobus; van Vulpen, Ivo; van Woerden, Marius Cornelis; Vanadia, Marco; Vandelli, Wainer; Vanguri, Rami; Vaniachine, Alexandre; Vankov, Peter; Vannucci, Francois; Vardanyan, Gagik; Vari, Riccardo; Varnes, Erich; Varol, Tulin; Varouchas, Dimitris; Vartapetian, Armen; Varvell, Kevin; Vazeille, Francois; Vazquez Schroeder, Tamara; Veatch, Jason; Veloso, Filipe; Veneziano, Stefano; Ventura, Andrea; Ventura, Daniel; Venturi, Manuela; Venturi, Nicola; Venturini, Alessio; Vercesi, Valerio; Verducci, Monica; Verkerke, Wouter; Vermeulen, Jos; Vest, Anja; Vetterli, Michel; Viazlo, Oleksandr; Vichou, Irene; Vickey, Trevor; Vickey Boeriu, Oana Elena; Viehhauser, Georg; Viel, Simon; Vigne, Ralph; Villa, Mauro; Villaplana Perez, Miguel; Vilucchi, Elisabetta; Vincter, Manuella; Vinogradov, Vladimir; Virzi, Joseph; Vivarelli, Iacopo; Vives Vaque, Francesc; Vlachos, Sotirios; Vladoiu, Dan; Vlasak, Michal; Vogel, Adrian; Vokac, Petr; Volpi, Guido; Volpi, Matteo; von der Schmitt, Hans; von Radziewski, Holger; von Toerne, Eckhard; Vorobel, Vit; Vorobev, Konstantin; Vos, Marcel; Voss, Rudiger; Vossebeld, Joost; Vranjes, Nenad; Vranjes Milosavljevic, Marija; Vrba, Vaclav; Vreeswijk, Marcel; Vu Anh, Tuan; Vuillermet, Raphael; Vukotic, Ilija; Vykydal, Zdenek; Wagner, Wolfgang; Wagner, Peter; Wahrmund, Sebastian; Wakabayashi, Jun; Walder, James; Walker, Rodney; Walkowiak, Wolfgang; Wall, Richard; Waller, Peter; Walsh, Brian; Wang, Chao; Wang, Chiho; Wang, Fuquan; Wang, Haichen; Wang, Hulin; Wang, Jike; Wang, Jin; Wang, Kuhan; Wang, Rui; Wang, Song-Ming; Wang, Tan; Wang, Xiaoxiao; Wanotayaroj, Chaowaroj; Warburton, Andreas; Ward, Patricia; Wardrope, David Robert; Warren, Matthew; Warsinsky, Markus; Washbrook, Andrew; Wasicki, Christoph; Watanabe, Ippei; Watkins, Peter; Watson, Alan; Watson, Ian; Watson, Miriam; Watts, Gordon; Watts, Stephen; Waugh, Ben; Webb, Samuel; Weber, Michele; Weber, Stefan Wolf; Webster, Jordan S; Weidberg, Anthony; Weigell, Philipp; Weinert, Benjamin; Weingarten, Jens; Weiser, Christian; Weits, Hartger; Wells, Phillippa; Wenaus, Torre; Wendland, Dennis; Weng, Zhili; Wengler, Thorsten; Wenig, Siegfried; Wermes, Norbert; Werner, Matthias; Werner, Per; Wessels, Martin; Wetter, Jeffrey; Whalen, Kathleen; White, Andrew; White, Martin; White, Ryan; White, Sebastian; Whiteson, Daniel; Wicke, Daniel; Wickens, Fred; Wiedenmann, Werner; Wielers, Monika; Wienemann, Peter; Wiglesworth, Craig; Wiik-Fuchs, Liv Antje Mari; Wijeratne, Peter Alexander; Wildauer, Andreas; Wildt, Martin Andre; Wilkens, Henric George; Will, Jonas Zacharias; Williams, Hugh; Williams, Sarah; Willis, Christopher; Willocq, Stephane; Wilson, John; Wilson, Alan; Wingerter-Seez, Isabelle; Winklmeier, Frank; Wittgen, Matthias; Wittig, Tobias; Wittkowski, Josephine; Wollstadt, Simon Jakob; Wolter, Marcin Wladyslaw; Wolters, Helmut; Wosiek, Barbara; Wotschack, Jorg; Woudstra, Martin; Wozniak, Krzysztof; Wright, Michael; Wu, Mengqing; Wu, Sau Lan; Wu, Xin; Wu, Yusheng; Wulf, Evan; Wyatt, Terry Richard; Wynne, Benjamin; Xella, Stefania; Xiao, Meng; Xu, Da; Xu, Lailin; Yabsley, Bruce; Yacoob, Sahal; Yamada, Miho; Yamaguchi, Hiroshi; Yamaguchi, Yohei; Yamamoto, Akira; Yamamoto, Kyoko; Yamamoto, Shimpei; Yamamura, Taiki; Yamanaka, Takashi; Yamauchi, Katsuya; Yamazaki, Yuji; Yan, Zhen; Yang, Haijun; Yang, Hongtao; Yang, Un-Ki; Yang, Yi; Yanush, Serguei; Yao, Liwen; Yao, Weiming; Yasu, Yoshiji; Yatsenko, Elena; Yau Wong, Kaven Henry; Ye, Jingbo; Ye, Shuwei; Yen, Andy L; Yildirim, Eda; Yilmaz, Metin; Yoosoofmiya, Reza; Yorita, Kohei; Yoshida, Rikutaro; Yoshihara, Keisuke; Young, Charles; Young, Christopher John; Youssef, Saul; Yu, David Ren-Hwa; Yu, Jaehoon; Yu, Jiaming; Yu, Jie; Yuan, Li; Yurkewicz, Adam; Zabinski, Bartlomiej; Zaidan, Remi; Zaitsev, Alexander; Zaman, Aungshuman; Zambito, Stefano; Zanello, Lucia; Zanzi, Daniele; Zaytsev, Alexander; Zeitnitz, Christian; Zeman, Martin; Zemla, Andrzej; Zengel, Keith; Zenin, Oleg; Ženiš, Tibor; Zerwas, Dirk; Zevi della Porta, Giovanni; Zhang, Dongliang; Zhang, Fangzhou; Zhang, Huaqiao; Zhang, Jinlong; Zhang, Lei; Zhang, Xueyao; Zhang, Zhiqing; Zhao, Zhengguo; Zhemchugov, Alexey; Zhong, Jiahang; Zhou, Bing; Zhou, Lei; Zhou, Ning; Zhu, Cheng Guang; Zhu, Hongbo; Zhu, Junjie; Zhu, Yingchun; Zhuang, Xuai; Zibell, Andre; Zieminska, Daria; Zimine, Nikolai; Zimmermann, Christoph; Zimmermann, Robert; Zimmermann, Simone; Zimmermann, Stephanie; Zinonos, Zinonas; Ziolkowski, Michael; Zobernig, Georg; Zoccoli, Antonio; zur Nedden, Martin; Zurzolo, Giovanni; Zutshi, Vishnu; Zwalinski, Lukasz

The semiconductor tracker is a silicon microstrip detector forming part of the inner tracking system of the ATLAS experiment at the LHC. The operation and performance of the semiconductor tracker during the first years of LHC running are described. More than 99% of the detector modules were operational during this period, with an average intrinsic hit efficiency of (99.74 +/- 0.04)%. The evolution of the noise occupancy is discussed, and measurements of the Lorentz angle, delta-ray production and energy loss presented. The alignment of the detector is found to be stable at the few-micron level over long periods of time. Radiation damage measurements, which include the evolution of detector leakage currents, are found to be consistent with predictions and are used in the verification of radiation background simulations.

HP Ge planar detectors

International Nuclear Information System (INIS)

Gornov, M.G.; Gurov, Yu.B.; Soldatov, A.M.; Osipenko, B.P.; Yurkowski, J.; Podkopaev, O.I.

1989-01-01

Parameters of planar detectors manufactured of HP Ge are presented. The possibilities to use multilayer spectrometers on the base of such semiconductor detectors for nuclear physics experiments are discussed. It is shown that the obtained detectors including high square ones have spectrometrical characteristics close to limiting possible values. 9 refs.; 3 figs.; 1 tab

Structural and electrical properties of high-quality 0.41 μm-thick InSb films grown on GaAs (1 0 0) substrate with InxAl1−xSb continuously graded buffer

International Nuclear Information System (INIS)

Shin, Sang Hoon; Song, Jin Dong; Lim, Ju Young; Koo, Hyun Cheol; Kim, Tae Geun

2012-01-01

High-quality InSb was grown on a GaAs (1 0 0) substrate with an InAlSb continuously graded buffer (CGB). The temperatures of In, Al K-cells and substrate were modified during the growth of InAlSb CGB. The cross-section TEM image reveals that the defects due to lattice-mismatch disappear near lateral structures in CGB. The measured electron mobility of 0.41 μm-thick InSb was 46,300 cm 2 /Vs at 300 K. These data surpass the electron mobility of state-of-the-art InSb grown by other methods with similar thickness of InSb.

Advanced semiconductor detector development: Development of a room-temperature, gamma ray detector using gallium arsenide to develop an electrode detector. Progress report, September 30, 1994--September 29, 1995

International Nuclear Information System (INIS)

Knoll, G.F.

1995-07-01

Devices fabricated from wide bandgap materials that can be operated without cooling suffer from poor energy resolution and are limited to very small volumes; this arises largely from poor hole mobility in compound semiconductors. Three different device configurations are being investigated for possibly overcoming this limitation: buried grid-single carrier devices, trenched single carrier devices, and devices using patterned coplanar electrodes (CdZnTe). In the first, leakage problems were encountered. For the second, a set of specifications has been completed, and electron cyclotron resonance etching will be done at an off-campus facility. For the third, Aurora will supply 3 different CdZnTe detectors. An analytical study was done of the patterned electrode approach

Solid State Neutron Detector - A Review of Status

International Nuclear Information System (INIS)

Mukhopadhyay, Sanjoy

2010-01-01

The PowerPoint presentation was organized into the following areas: Driving forces behind research in semiconductor neutron devices; The (sup 3)He shortage crisis; Alternative detectors for neutron; Semiconductor diodes coated with boron; Perforated semiconductors for neutron detection; and, Three dimensional pillar and trench structured semiconductors.

Radiation detectors laboratory

International Nuclear Information System (INIS)

Ramirez J, F.J.

1997-01-01

The Radiation detectors laboratory was established with the assistance of the International Atomic Energy Agency which gave this the responsibility to provide its services at National and regional level for Latin America and it is located at the ININ. The more expensive and delicate radiation detectors are those made of semiconductor, so it has been put emphasis in the use and repairing of these detectors type. The supplied services by this laboratory are: selection consultant, detectors installation and handling and associated systems. Installation training, preventive and corrective maintenance of detectors and detection systems calibration. (Author)

Verification of the plan dosimetry for high dose rate brachytherapy using metal-oxide-semiconductor field effect transistor detectors

International Nuclear Information System (INIS)

Qi Zhenyu; Deng Xiaowu; Huang Shaomin; Lu Jie; Lerch, Michael; Cutajar, Dean; Rosenfeld, Anatoly

2007-01-01

The feasibility of a recently designed metal-oxide-semiconductor field effect transistor (MOSFET) dosimetry system for dose verification of high dose rate (HDR) brachytherapy treatment planning was investigated. MOSFET detectors were calibrated with a 0.6 cm 3 NE-2571 Farmer-type ionization chamber in water. Key characteristics of the MOSFET detectors, such as the energy dependence, that will affect phantom measurements with HDR 192 Ir sources were measured. The MOSFET detector was then applied to verify the dosimetric accuracy of HDR brachytherapy treatments in a custom-made water phantom. Three MOSFET detectors were calibrated independently, with the calibration factors ranging from 0.187 to 0.215 cGy/mV. A distance dependent energy response was observed, significant within 2 cm from the source. The new MOSFET detector has a good reproducibility ( 2 =1). It was observed that the MOSFET detectors had a linear response to dose until the threshold voltage reached approximately 24 V for 192 Ir source measurements. Further comparison of phantom measurements using MOSFET detectors with dose calculations by a commercial treatment planning system for computed tomography-based brachytherapy treatment plans showed that the mean relative deviation was 2.2±0.2% for dose points 1 cm away from the source and 2.0±0.1% for dose points located 2 cm away. The percentage deviations between the measured doses and the planned doses were below 5% for all the measurements. The MOSFET detector, with its advantages of small physical size and ease of use, is a reliable tool for quality assurance of HDR brachytherapy. The phantom verification method described here is universal and can be applied to other HDR brachytherapy treatments

Vacancies and defect levels in III–V semiconductors

KAUST Repository

Tahini, H. A.

2013-08-13

Using electronic structure calculations, we systematically investigate the formation of vacancies in III-V semiconductors (III = Al, Ga, and In and V = P, As, and Sb), for a range of charges ( −3≤q≤3 ) as a function of the Fermi level and under different growth conditions. The formation energies were corrected using the scheme due to Freysoldt et al. [Phys. Rev. Lett. 102, 016402 (2009)] to account for finite size effects. Vacancy formation energies were found to decrease as the size of the group V atom increased. This trend was maintained for Al-V, Ga-V, and In-V compounds. The negative-U effect was only observed for the arsenic vacancy in GaAs, which makes a charge state transition from +1 to –1. It is also found that even under group III rich conditions, group III vacancies dominate in AlSb and GaSb. For InSb, group V vacancies are favoured even under group V rich conditions.

Vacancies and defect levels in III–V semiconductors

KAUST Repository

Tahini, H. A.; Chroneos, Alexander; Grimes, R. W.; Murphy, S. T.; Schwingenschlö gl, Udo

2013-01-01

Using electronic structure calculations, we systematically investigate the formation of vacancies in III-V semiconductors (III = Al, Ga, and In and V = P, As, and Sb), for a range of charges ( −3≤q≤3 ) as a function of the Fermi level and under different growth conditions. The formation energies were corrected using the scheme due to Freysoldt et al. [Phys. Rev. Lett. 102, 016402 (2009)] to account for finite size effects. Vacancy formation energies were found to decrease as the size of the group V atom increased. This trend was maintained for Al-V, Ga-V, and In-V compounds. The negative-U effect was only observed for the arsenic vacancy in GaAs, which makes a charge state transition from +1 to –1. It is also found that even under group III rich conditions, group III vacancies dominate in AlSb and GaSb. For InSb, group V vacancies are favoured even under group V rich conditions.

Mn doped InSb studied at the atomic scale by cross-sectional scanning tunneling microscopy

International Nuclear Information System (INIS)

Mauger, S. J. C.; Bocquel, J.; Koenraad, P. M.; Feeser, C. E.; Parashar, N. D.; Wessels, B. W.

2015-01-01

We present an atomically resolved study of metal-organic vapor epitaxy grown Mn doped InSb. Both topographic and spectroscopic measurements have been performed by cross-sectional scanning tunneling microscopy (STM). The measurements on the Mn doped InSb samples show a perfect crystal structure without any precipitates and reveal that Mn acts as a shallow acceptor. The Mn concentration of the order of ∼10 20  cm −3 obtained from the cross-sectional STM data compare well with the intended doping concentration. While the pair correlation function of the Mn atoms showed that their local distribution is uncorrelated beyond the STM resolution for observing individual dopants, disorder in the Mn ion location giving rise to percolation pathways is clearly noted. The amount of clustering that we see is thus as expected for a fully randomly disordered distribution of the Mn atoms and no enhanced clustering or second phase material was observed

Transmutation doping and lattice defects in degenerate InSb

International Nuclear Information System (INIS)

Gerstenberg, H.; Glaeser, W.

1990-01-01

n-type InSb single crystals were irradiated with thermal neutrons below T = 6 K. The Shubnikov-de Haas effect and the resistivity ρ(T = 4.6 K) were measured as a function of the neutron dose and the holding temperature of a subsequent annealing program. The results are discussed in terms of the transport scattering rate and the lifetime of the Landau-levels. They have to be interpreted by means of n-doping due to nuclear reactions and irradiation induced negatively charged defects. Almost complete annealing of the transport parameters can be achieved by heating the samples to T A = 400 K. (author)

Measurements of light absorption efficiency in InSb nanowires

Directory of Open Access Journals (Sweden)

A. Jurgilaitis

2014-01-01

Full Text Available We report on measurements of the light absorption efficiency of InSb nanowires. The absorbed 70 fs light pulse generates carriers, which equilibrate with the lattice via electron-phonon coupling. The increase in lattice temperature is manifested as a strain that can be measured with X-ray diffraction. The diffracted X-ray signal from the excited sample was measured using a streak camera. The amount of absorbed light was deduced by comparing X-ray diffraction measurements with simulations. It was found that 3.0(6% of the radiation incident on the sample was absorbed by the nanowires, which cover 2.5% of the sample.

Photon detector configured to employ the Gunn effect and method of use

Science.gov (United States)

Cich, Michael J

2015-03-17

Embodiments disclosed herein relate to photon detectors configured to employ the Gunn effect for detecting high-energy photons (e.g., x-rays and gamma rays) and methods of use. In an embodiment, a photon detector for detecting high-energy photons is disclosed. The photon detector includes a p-i-n semiconductor diode having a p-type semiconductor region, an n-type semiconductor region, and a compensated i-region disposed between the p-type semiconductor region and the n-type semiconductor region. The compensated i-region and has a width of about 100 .mu.m to about 400 .mu.m and is configured to exhibit the Gunn effect when the p-i-n semiconductor diode is forward biased a sufficient amount. The compensated i-region is doped to include a free carrier concentration of less than about 10.sup.10 cm.sup.-3.

Semiconductor micropattern pixel detectors: a review of the beginnings

International Nuclear Information System (INIS)

Heijne, E.H.M.

2001-01-01

The innovation in monolithic and hybrid semiconductor 'micropattern' or 'reactive' pixel detectors for tracking in particle physics was actually to fit logic and pulse processing electronics with μW power on a pixel area of less than 0.04 mm 2 , retaining the characteristics of a traditional nuclear amplifier chain. The ns timing precision in conjunction with local memory and logic operations allowed event selection at >10 MHz rates with unambiguous track reconstruction even at particle multiplicities >10 cm -2 . The noise in a channel was ∼100e - rms and enabled binary operation with random noise 'hits' at a level -8 . Rectangular pixels from 75 μmx500 μm down to 34 μmx125 μm have been used by different teams. In binary mode a tracking precision from 6 to 14 μm was obtained, and using analog interpolation one came close to 1 μm. Earlier work, still based on charge integrating imaging circuits, provided a starting point. Two systems each with more than 1 million sensor + readout channels have been built, for WA97-NA57 and for the Delphi very forward tracker. The use of 0.5 μm and 0.25 μm CMOS and enclosed geometry for the transistors in the pixel readout chips resulted in radiation hardness of ∼2 Mrad, respectively, >30 Mrad

Multilayer Semiconductor Charged-Particle Spectrometers for Accelerator Experiments

Science.gov (United States)

Gurov, Yu. B.; Lapushkin, S. V.; Sandukovsky, V. G.; Chernyshev, B. A.

2018-03-01

The current state of studies in the field of development of multilayer semiconductor systems (semiconductor detector (SCD) telescopes), which allow the energy to be precisely measured within a large dynamic range (from a few to a few hundred MeV) and the particles to be identified in a wide mass range (from pions to multiply charged nuclear fragments), is presented. The techniques for manufacturing the SCD telescopes from silicon and high-purity germanium are described. The issues of measuring characteristics of the constructed detectors and their impact on the energy resolution of the SCD telescopes and on the quality of the experimental data are considered. Much attention is given to the use of the constructed semiconductor devices in experimental studies at accelerators of PNPI (Gatchina), LANL (Los Alamos) and CELSIUS (Uppsala).

Multichannel, time-resolved picosecond laser ultrasound imaging and spectroscopy with custom complementary metal-oxide-semiconductor detector

International Nuclear Information System (INIS)

Smith, Richard J.; Light, Roger A.; Johnston, Nicholas S.; Pitter, Mark C.; Somekh, Mike G.; Sharples, Steve D.

2010-01-01

This paper presents a multichannel, time-resolved picosecond laser ultrasound system that uses a custom complementary metal-oxide-semiconductor linear array detector. This novel sensor allows parallel phase-sensitive detection of very low contrast modulated signals with performance in each channel comparable to that of a discrete photodiode and a lock-in amplifier. Application of the instrument is demonstrated by parallelizing spatial measurements to produce two-dimensional thickness maps on a layered sample, and spectroscopic parallelization is demonstrated by presenting the measured Brillouin oscillations from a gallium arsenide wafer. This paper demonstrates the significant advantages of our approach to pump probe systems, especially picosecond ultrasonics.

Multichannel, time-resolved picosecond laser ultrasound imaging and spectroscopy with custom complementary metal-oxide-semiconductor detector

Energy Technology Data Exchange (ETDEWEB)

Smith, Richard J.; Light, Roger A.; Johnston, Nicholas S.; Pitter, Mark C.; Somekh, Mike G. [Institute of Biophysics, Imaging and Optical Science, University of Nottingham, Nottinghamshire NG7 2RD (United Kingdom); Sharples, Steve D. [Applied Optics Group, Electrical Systems and Optics Research Division, University of Nottingham, Nottinghamshire NG7 2RD (United Kingdom)

2010-02-15

This paper presents a multichannel, time-resolved picosecond laser ultrasound system that uses a custom complementary metal-oxide-semiconductor linear array detector. This novel sensor allows parallel phase-sensitive detection of very low contrast modulated signals with performance in each channel comparable to that of a discrete photodiode and a lock-in amplifier. Application of the instrument is demonstrated by parallelizing spatial measurements to produce two-dimensional thickness maps on a layered sample, and spectroscopic parallelization is demonstrated by presenting the measured Brillouin oscillations from a gallium arsenide wafer. This paper demonstrates the significant advantages of our approach to pump probe systems, especially picosecond ultrasonics.

Electronic structure of semiconductor interfaces

Energy Technology Data Exchange (ETDEWEB)

Herman, F

1983-02-01

The study of semiconductor interfaces is one of the most active and exciting areas of current semiconductor research. Because interfaces play a vital role in modern semiconductor technology (integrated circuits, heterojunction lasers, solar cells, infrared detectors, etc.), there is a strong incentive to understand interface properties at a fundamental level and advance existing technology thereby. At the same time, technological advances such as molecular beam epitaxy have paved the way for the fabrication of semiconductor heterojunctions and superlattices of novel design which exhibit unusual electronic, optical, and magnetic properties and offer unique opportunities for fundamental scientific research. A general perspective on this subject is offered treating such topics as the atomic and electronic structure of semiconductor surfaces and interfaces; oxidation and oxide layers; semiconductor heterojunctions and superlattices; rectifying metal-semiconductor contacts; and interface reactions. Recent progress is emphasized and some future directions are indicated. In addition, the role that large-scale scientific computation has played in furthering our theoretical understanding of semiconductor surfaces and interfaces is discussed. Finally, the nature of theoretical models, and the role they play in describing the physical world is considered.

Electronic structure of semiconductor interfaces

International Nuclear Information System (INIS)

Herman, F.

1983-01-01

The study of semiconductor interfaces is one of the most active and exciting areas of current semiconductor research. Because interfaces play a vital role in modern semiconductor technology (integrated circuits, heterojunction lasers, solar cells, infrared detectors, etc.), there is a strong incentive to understand interface properties at a fundamental level and advance existing technology thereby. At the same time, technological advances such as molecular beam epitaxy have paved the way for the fabrication of semiconductor heterojunctions and superlattices of novel design which exhibit unusual electronic, optical, and magnetic properties and offer unique opportunities for fundamental scientific research. A general perspective on this subject is offered treating such topics as the atomic and electronic structure of semiconductor surfaces and interfaces; oxidation and oxide layers; semiconductor heterojunctions and superlattices; rectifying metal-semiconductor contacts; and interface reactions. Recent progress is emphasized and some future directions are indicated. In addition, the role that large-scale scientific computation has played in furthering our theoretical understanding of semiconductor surfaces and interfaces is discussed. Finally, the nature of theoretical models, and the role they play in describing the physical world is considered. (Author) [pt

Fabrication and utilization of semiconductor radiation detectors

International Nuclear Information System (INIS)

Lemos Junior, Orlando Ferreira

1969-01-01

This paper describes the assembly of the equipment for the fabrication of Ge-Li drifted detectors and the technique used in the preparation of a Planar detector of 7 cm 2 x 0,5 cm for the Laboratory of the Linear Accelerator at the University of Sao Paulo, as well as the utilization of a 22 cm 3 coaxial detector for the analysis of fission product gamma rays at the Instituto de Engenharia Nuclear, Rio de Janeiro, R J, Brazil. (author)

Design of nanophotonic, hot-electron solar-blind ultraviolet detectors with a metal-oxide-semiconductor structure

International Nuclear Information System (INIS)

Wang, Zhiyuan; Wang, Xiaoxin; Liu, Jifeng

2014-01-01

Solar-blind ultraviolet (UV) detection refers to photon detection specifically in the wavelength range of 200 nm–320 nm. Without background noises from solar radiation, it has broad applications from homeland security to environmental monitoring. The most commonly used solid state devices for this application are wide band gap (WBG) semiconductor photodetectors (Eg > 3.5 eV). However, WBG semiconductors are difficult to grow and integrate with Si readout integrated circuits (ROICs). In this paper, we design a nanophotonic metal-oxide-semiconductor structure on Si for solar-blind UV detectors. Instead of using semiconductors as the active absorber, we use Sn nano-grating structures to absorb UV photons and generate hot electrons for internal photoemission across the Sn/SiO 2 interfacial barrier, thereby generating photocurrent between the metal and the n-type Si region upon UV excitation. Moreover, the transported hot electron has an excess kinetic energy >3 eV, large enough to induce impact ionization and generate another free electron in the conduction band of n-Si. This process doubles the quantum efficiency. On the other hand, the large metal/oxide interfacial energy barrier (>3.5 eV) also enables solar-blind UV detection by blocking the less energetic electrons excited by visible photons. With optimized design, ∼75% UV absorption and hot electron excitation can be achieved within the mean free path of ∼20 nm from the metal/oxide interface. This feature greatly enhances hot electron transport across the interfacial barrier to generate photocurrent. The simple geometry of the Sn nano-gratings and the MOS structure make it easy to fabricate and integrate with Si ROICs compared to existing solar-blind UV detection schemes. The presented device structure also breaks through the conventional notion that photon absorption by metal is always a loss in solid-state photodetectors, and it can potentially be extended to other active metal photonic devices. (paper)

The ATLAS inner detector semiconductor tracker (Si and GaAs strips): review of the 1995 beam tests at the CERN SPS H8 beamline

International Nuclear Information System (INIS)

Moorhead, G.F.

1995-01-01

This talk will consist of a brief review of the ATLAS Inner Detector (ID) Semiconductor Tracker (SCT) strip detector (both silicon and gallium arsenide) beam tests conducted at the ATLAS test beam facility at the CERN SPS H8 beamline. It will include a brief overview of the H8 facilities, the experimental layout of the SCT/Strip apparatus, the data acquisition system, some of the online software tools and the high precision silicon hodoscope and timing modules used. A very brief indication of some of the main varieties of detector systems tested and the measurements performed will be given. Throughout some emphasis will be placed on the contributions and-interests of members of the Melbourne group. (author)

New detector concepts

International Nuclear Information System (INIS)

Kemmer, J.; Lutz, G.

1986-07-01

On the basis of the semiconductor drift chamber many new detectors are proposed, which enable the determination of energy, energy loss, position and penetration depth of radiation. A novel integrated transistor-detector configuration allows non destructive repeated readout and amplification of the signal. The concept may be used for the construction of one or two-dimensional PIXEL arrays. (orig.)

Investigation about semiconductor gamma ray detector - Evaluation of Ge(Li) detectors life expectation

International Nuclear Information System (INIS)

1980-06-01

A list of germanium lithium gamma ray detectors has been drawn up by a working group after investigations in various laboratories. Authors analyse the historical account of each detector and try to give an answer about some questions as: - detectors life expectation, - deficiencies and death reasons, - influence of detector type and volume. Differents parameters are also collected by the working group for future works (standard geometry, low level measurements, etc.). In the list, the characteristics of 228 detectors, collected between january 1965 and december 1977 are put together. The principal conclusions of the authors are: - with a probability of 95%, half of the detectors is dead before 6.1 years, - the average age of dead population (33% of detectors) is 3.9 years, - resolution and efficiency evolution are good indicators of possible deficiency, - the fiability of vertical cryostat is better than the other systems [fr

A spectrometer using semi-conductor detectors; study and applications (1963); Spectrometre utilisant les detecteurs a semi-conducteur: etudes et applications (1963)

Energy Technology Data Exchange (ETDEWEB)

Roux, G [Commissariat a l' Energie Atomique, Saclay (France). Centre d' Etudes Nucleaires

1963-07-01

The low average energy, 2.5 to 3.5 eV, required to produce one hole-electron pair in a semiconductor allows an accurate measurement of the energy of the ionizing particles. A high resolution spectrometer has been built using semiconductor detectors. The limit of resolution, due to electronics associated to the detector, to the detector itself and to the source of particles is studied here. The present practical limit of resolution of the spectrometer is 1700 elementary electric charges (full width at half maximum of a ray of a spectrum) or 6 keV in terms of energy lost by a particle in a silicon detector. The physical resolution usually obtained is 20 keV (0.33 per cent) with {alpha} particles of the {sup 212}Bi (6.087 MeV). It depends a lot of the kind of detector used. Some results, concerning the background of the detectors and limit of measurements for low energies are given. Various applications are presented: spectrometry {beta}, spectrometry {gamma} and X, spectrometry of mixtures of {alpha} radioactive elements, collection of {alpha} spectra. (author) [French] La faible energie moyenne, 2,5 a 3,5 eV, necessaire pour produire une paire electron-trou dans un semi-conducteur, permet une mesure precise de l'energie des particules ionisantes. Un spectrometre a haute resolution a ete construit utilisant des detecteurs a semi-conducteur. La limitation en resolution due a l'electronique associee au detecteur, au detecteur lui-meme et a la source de particules, est etudiee. La resolution pratique limite actuelle du spectrometre est 1700 charges electriques elementaires (largeur a mi-hauteur d'une raie de spectre) ou 6 keV exprimee en energie perdue par une particule dans un detecteur au silicium. La resolution physique couramment obtenue est de 20 keV (0,33 pour cent) pour les particules {alpha} du bismuth 212 (6,087 MeV). Elle depend beaucoup du detecteur utilise. Quelques resultats sont donnes concernant le mouvement propre des detecteurs et la limitation des

Transport coefficients of InSb in a strong magnetic field

International Nuclear Information System (INIS)

Nakamura, Hiroaki; Ikeda, Kazuaki; Yamaguchi, Satarou

1998-02-01

Improvement of a superconducting magnet system makes induction of a strong magnetic field easier. This fact gives us a possibility of energy conversion by the Nernst effect. As the first step to study the Nernst element, we measured the conductivity, the Hall coefficient, the thermoelectric power and the Nernst coefficient of the InSb, which is one of candidates of the Nernst elements. From this experiment, it is concluded that the Nernst coefficient is smaller than the theoretical values. On the other hand, the conductivity, the Hall coefficient and the thermoelectric power has the values expected by the theory. (author)

Development and characterization of the lead iodide semiconductor detector; Desenvolvimento e caracterizacao do detector semicondutor de iodeto de chumbo

Energy Technology Data Exchange (ETDEWEB)

Oliveira, Icimone Braga de

2001-07-01

A methodology for purification and growth of PbI{sub 2} crystal as well as for its characterization as a room temperature radiation detector was developed in this work. Commercial salts were purified using the zone refining method and, for the purified material growth, the Bridgman method was used. To calculate the purification efficiency, studies of the decrease impurities concentrations were made in the salts and in three sections of the materials purified, using the neutron activation analysis technique. The results showed that the impurities segregate preferentially in the ingot final section. A significant decrease of the impurities concentration in function of the purification pass number was observed. The grown crystals presented good crystalline quality according to the results of the X-ray diffraction analysis. To evaluate the crystal as a semiconductor detector, measurements of dark leakage current, resistivity and the response of ({sup 241}Am) alpha particle and ({sup 241}Am, {sup 57}Co, {sup 133}Ba and {sup 137}Cs) gamma rays were carried out. The radiation response is strongly dependent on the crystals purity. The crystals purified with 500 passes exhibited energy resolution of 10% for {sup 241} Am alpha particle and the gamma rays resolution was compatible with the literature. The photosensibility of the PbI{sub 2} crystal found in the wavelength from 400 to 600 nm range suggests an another application at this crystal as a photodetector to be coupled to scintillators. (author)

Development of semiconductor radiation sensors for portable alarm-dosimeter

Energy Technology Data Exchange (ETDEWEB)

Kim, Y. K.; Moon, B. S.; Chung, C. E.; Hong, S. B.; Kim, J. Y.; Kim, J. B.; Han, S. H.; Lee, W. G. [Korea Atomic Energy Research Institute, Taejeon (Korea)

2001-01-01

We studied Semiconductor Radiation Sensors for Portable Alarm-Dosimeter. We calculated response functions for gamma energy 0.021, 0.122, 0.662, 0.835, 1.2 MeV using EGS4 codes. When we measured at various distance from source to detector, the detection efficiency of Si semiconductor detector was better than that of GM tube. The linear absorption coefficients of steel and aluminum plate were measured. These experimental results of the response of detector for intensity of radiation field coincide to the theoretical expectation. The count value of Si detector was changed with changing thickness of steel as changing threshold voltage of discriminator, and the linear absorption coefficient increased with increasing threshold voltage. Radiation detection efficiency shows difference at each threshold voltage condition. This results coincided to the theoretical simulation. 33 refs., 27 figs., 8 tabs. (Author)

In vivo dosimetry with semiconductor and thermoluminescent detectors applied to head and neck cancer treatment

International Nuclear Information System (INIS)

Viegas, Claudio Castelo Branco

2003-03-01

In vivo dosimetry in radiotherapy, i. e, the assessment of the doses received by patients during their treatments, permits a verification of the therapy quality. A routine of in vivo dosimetry is, undoubtedly, a direct benefit for the patient. Unfortunately, in Brazil and in Latin America this procedure is still a privilege for only a few patients. This routine is of common application only in developed countries. The aim of this work is to show the viability and implementation of a routine in vivo dosimetry, using diodes semiconductors and thermoluminescent dosimeters (TLD), at the radiotherapy section of the National Institute of Cancer in Brazil, in the case of head and neck cancer treatment. In order to reach that aim, the characteristics of the response of diodes ISORAD-p and LiF:Mg;Ti (TLD-100) thermoluminescent detectors in powder form were determined. The performance of those detectors for in vivo dosimetry was tested using an RANDO Alderson anthropomorfic phantom and, once their adequacy proved for the kind of measurements proposed, they were used for dose assessment in the case of tumour treatments in the head and neck regions, for Cobalt-60 irradiations. (author)

Thermoelectrically cooled semiconductor detectors for non-destructive analysis of works of art by means of energy dispersive X-ray fluorescence

CERN Document Server

Cesareo, R; Castellano, A

1999-01-01

Thermoelectrically cooled semiconductor detectors, such as Si-PIN, Si-drift, Cd sub 1 sub - sub x Zn sub x Te and HgI sub 2 , coupled to miniaturized low-power X-ray tubes, are well suited in portable systems for energy-dispersive X-ray fluorescence (EDXRF), analysis of archaeological samples. The Si-PIN detector is characterized by a thickness of about 300 mu m, an area of about 2x3 mm sup 2 , an energy resolution of about 200-250 eV at 5.9 keV and an entrance window of 25-75 mu m. The Si-drift detector has approximately the same area and thickness, but an energy resolution of 155 eV at 5.9 keV. The efficiency of these detectors is around 100% from 4 to 10 keV, and then decreases versus energy, reaching approx 9% at 30 keV. Coupled to a miniaturized 10 kV, 0.1 mA, Ca-anode or to a miniaturized 30 kV, 0.1 mA, W-anode X-ray tubes, portable systems can be constructed, which are able to analyse K-lines of elements up to about silver, and L-lines of heavy elements. The Cd sub 1 sub - sub x Zn sub x Te detector ha...

Semiconductors and semimetals epitaxial microstructures

CERN Document Server

Willardson, Robert K; Beer, Albert C; Gossard, Arthur C

1994-01-01

Newly developed semiconductor microstructures can now guide light and electrons resulting in important consequences for state-of-the-art electronic and photonic devices. This volume introduces a new generation of epitaxial microstructures. Special emphasis has been given to atomic control during growth and the interrelationship between the atomic arrangements and the properties of the structures.Key Features* Atomic-level control of semiconductor microstructures* Molecular beam epitaxy, metal-organic chemical vapor deposition* Quantum wells and quantum wires* Lasers, photon(IR)detectors, heterostructure transistors

Maximizing signal-to-noise ratio (SNR) in 3-D large bandgap semiconductor pixelated detectors in optimal and non-optimal filtering conditions

International Nuclear Information System (INIS)

Rodrigues, Miesher L.; Serra, Andre da S.; He, Zhong; Zhu, Yuefeng

2009-01-01

3-D pixelated semiconductor detectors are used in radiation detection applications requiring spectroscopic and imaging information from radiation sources. Reconstruction algorithms used to determine direction and energy of incoming gamma rays can be improved by reducing electronic noise and using optimum filtering techniques. Position information can be improved by achieving sub-pixel resolution. Electronic noise is the limiting factor. Achieving sub-pixel resolution - position of the interaction better than one pixel pitch - in 3-D pixelated semiconductor detectors is a challenging task due to the fast transient characteristics of these signals. This work addresses two fundamental questions: the first is to determine the optimum filter, while the second is to estimate the achievable sub-pixel resolution using this filter. It is shown that the matched filter is the optimum filter when applying the signal-to-noise ratio criteria. Also, non-optimum filters are studied. The framework of 3-D waveform simulation using the Shockley-Ramo Theorem and the Hecht Equation for electron and hole trapping is presented in this work. This waveform simulator can be used to analyze current detectors as well as explore new ideas and concepts in future work. Numerical simulations show that assuming an electronic noise of 3.3 keV it is possible to subdivide the pixel region into 5x5 sub-pixels. After analyzing these results, it is suggested that sub-pixel information can also improve energy resolution. Current noise levels present the major drawback to both achieve sub-pixel resolution as well as improve energy resolution below the current limits. (author)

New developments in PET detector technology

International Nuclear Information System (INIS)

Niu Lingxin; Zhao Shujun; Zhang Bin; Liu Haojia

2010-01-01

The researches on PET detector are always active and innovative area. The research direction of PET detector includes improving performances of scintillator-based detectors, investigating new detectors suitable for multi-modality imaging (e.g. PET/CT and PET/MRI), meeting requirements of TOF and DOI technologies and boosting the development of the technologies. In this paper, new developments in PET detector technology about scintillation crystal, photodetector and semiconductor detector is introduced. (authors)

Fast timing methods for semiconductor detectors. Revision

International Nuclear Information System (INIS)

Spieler, H.

1984-10-01

This tutorial paper discusses the basic parameters which determine the accuracy of timing measurements and their effect in a practical application, specifically timing with thin-surface barrier detectors. The discussion focusses on properties of the detector, low-noise amplifiers, trigger circuits and time converters. New material presented in this paper includes bipolar transistor input stages with noise performance superior to currently available FETs, noiseless input terminations in sub-nanosecond preamplifiers and methods using transmission lines to couple the detector to remotely mounted preamplifiers. Trigger circuits are characterized in terms of effective rise time, equivalent input noise and residual jitter

Ultrafast Structural Dynamics in InSb Probed by Time-Resolved X-Ray Diffraction

International Nuclear Information System (INIS)

Chin, A.H.; Shank, C.V.; Chin, A.H.; Schoenlein, R.W.; Shank, C.V.; Glover, T.E.; Leemans, W.P.; Balling, P.

1999-01-01

Ultrafast structural dynamics in laser-perturbed InSb are studied using time-resolved x-ray diffraction with a novel femtosecond x-ray source. We report the first observation of a delay in the onset of lattice expansion, which we attribute to energy relaxation processes and lattice strain propagation. In addition, we observe direct indications of ultrafast disordering on a subpicosecond time scale. copyright 1999 The American Physical Society

Optical properties of crystalline semiconductors and dielectrics

International Nuclear Information System (INIS)

Forouhi, A.R.; Bloomer, I.

1988-01-01

A new formulation for the complex index of refraction, N(E) = n(E)-ik(E), as a function of photon energy E, for crystalline semiconductors and dielectrics is developed based on our previous derivation of N(E) for amorphous materials. The extinction coefficient k(E) is deduced from a one-electron model with finite lifetime for the excited electron state. The refractive index n(E) is then derived from the Kramers-Kronig relation as the Hilbert transform of k(E). It is shown that n(∞)>1. Excellent agreement is found between our equations for n(E) and k(E) and published measured values for crystalline Si, Ge, GaP, GaAs, GaSb, InP, InAs, InSb, SiC, cubic C, and α-SiO 2 , over a wide range of energies (∼0--20 eV). Far fewer parameters, all of which have physical significance, are required and they can be determined for a particular material from the position and strength of the peaks in the k spectrum

Canberra semiconductor, an industrial partner for physics research

International Nuclear Information System (INIS)

Verplancke, J.; Burger, P.; Schoenmaekers, W.

1990-01-01

Canberra semiconductor produces germanium and silicon solid state detectors for nuclear radiation. Its business domain covers the production of standard detectors on an industrial basis, for industrial and applied physics applications, as well as the development of special detectors and electronics, tailored to the needs of a particular application, in science and research. There exists an important and beneficial interaction between these two activities. (orig.)

Nitride semiconductor devices fundamentals and applications

CERN Document Server

Morkoç, Hadis

2013-01-01

This book gives a clear presentation of the necessary basics of semiconductor and device physics and engineering. It introduces readers to fundamental issues that will enable them to follow the latest technological research. It also covers important applications, including LED and lighting, semiconductor lasers, high power switching devices, and detectors. This balanced and up-to-date treatment makes the text an essential educational tool for both advanced students and professionals in the electronics industry.

A novel 3D detector configuration enabling high quantum efficiency, low crosstalk, and low output capacitance

International Nuclear Information System (INIS)

Aurola, A.; Marochkin, V.; Tuuva, T.

2016-01-01

The benefits of pixelated planar direct conversion semiconductor radiation detectors comprising a thick fully depleted substrate are that they offer low crosstalk, small output capacitance, and that the planar configuration simplifies manufacturing. In order to provide high quantum efficiency for high energy X-rays and Gamma-rays such a radiation detector should be as thick as possible. The maximum thickness and thus the maximum quantum efficiency has been limited by the substrate doping concentration: the lower the substrate doping the thicker the detector can be before reaching the semiconductor material's electric breakdown field. Thick direct conversion semiconductor detectors comprising vertical three-dimensional electrodes protruding through the substrate have been previously proposed by Sherwood Parker in order to promote rapid detection of radiation. An additional advantage of these detectors is that their thickness is not limited by the substrate doping, i.e., the size of the maximum electric field value in the detector does not depend on detector thickness. However, the thicker the substrate of such three dimensional detectors is the larger the output capacitance is and thus the larger the output noise is. In the novel direct conversion pixelated radiation detector utilizing a novel three dimensional semiconductor architecture, which is proposed in this work, the detector thickness is not limited by the substrate doping and the output capacitance is small and does not depend on the detector thickness. In addition, by incorporating an additional node to the novel three-dimensional semiconductor architecture it can be utilized as a high voltage transistor that can deliver current across high voltages. Furthermore, it is possible to connect a voltage difference of any size to the proposed novel three dimensional semiconductor architecture provided that it is thick enough—this is a novel feature that has not been previously possible for semiconductor

Two-arm semiconductor spectrometer for charged particles for the investigation of absorption by nuclei of stopped negative pions

International Nuclear Information System (INIS)

Gornov, M.G.; Gurov, Yu.B.; Lukin, A.S.; Morokhov, P.V.; Pechkurov, V.A.; Pichugin, A.P.; Saveliev, V.I.; Shafigullin, R.R.; Sergeev, F.M.; Khomutov, A.A.; Oganesian, K.O.; Osipenko, B.P.; Sandukovsky, V.G.

1984-01-01

A two-arm semiconductor spectrometer for the detection of secondary charged particles, such as p, d, t, 3 He, 4 He and of their correlations in the process of stopped pion absorption by nuclei is described. The spectrometer consists of two telescopes of Si-detectors with a sensitive surface of 800 mm 2 , two semiconductor detectors as monitors and the 'live' target, a silicon surface barrier detector. The number of semiconductor detectors is 19. A technique for pion stop selection in thin targets is described. The problem of particle identification and of measurements of their energy with the help of a multicrystal semiconductor telescope is discussed. The technique provides an absolute normalization of spectra. The 'alive' target helps to obtain more information on the process of pion absorption by Si-nuclei. (orig.)

A novel integrated circuit for semiconductor radiation detectors with sparse readout

International Nuclear Information System (INIS)

Zhang Yacong; Chen Zhognjian; Lu Wengao; Zhao Baoying; Ji Lijiu

2008-01-01

A novel fully integrated CMOS readout circuit for semiconductor radiation detector with sparse readout is presented. The new sparse scheme is: when one channel is being read out, the trigger signal from other channels is delayed and then processed. Therefore, the dead time is reduced and so is the error rate. Besides sparse readout, sequential readout is also allowed, which means the analog voltages and addresses of all the channels are read out sequentially once there is a channel triggered. The circuit comprises Charge Sensitive Amplifier (CSA), pulse shaper, peak detect and hold circuit, and digital logic. A test chip of four channels designed in a 0.5 μ DPTM CMOS technology has been taped out. The results of post simulation indicate that the gain is 79.3 mV/fC with a linearity of 99.92%. The power dissipation is 4 mW per channel. Theory analysis and calculation shows that the error probability is approximately 2.5%, which means a reduction of about 37% is obtained compared with the traditional scanning scheme, assuming a 16-channel system with a particle rate of 100 k/s per channel. (authors)

Strip type radiation detector and method of making same

International Nuclear Information System (INIS)

Jantsch, O.; Feigt, I.; Willig, W.R.

1976-01-01

An improved strip detector and a method for making such a detector in which a high resistivity N conduction semiconductor body has electrode strips formed thereon by diffusion is described. The strips are formed so as to be covered by an oxide layer at the surface point of the PN junction and in which the opposite side of the semiconductor body then has a substantial amount of material etched away to form a thin semiconductor upon which strip electrodes which are perpendicular to the electrodes on the first side are then placed

Structure and composition of chemically prepared and vacuum annealed InSb(0 0 1) surfaces

International Nuclear Information System (INIS)

Tereshchenko, O.E.

2006-01-01

The InSb(0 0 1) surfaces chemically treated in HCl-isopropanol solution and annealed in vacuum were studied by means of X-ray photoelectron spectroscopy (XPS), low energy electron diffraction (LEED) and electron energy-loss spectroscopy (EELS). The HCl-isopropanol treatment removes indium and antimony oxides and leaves on the surface about 3 ML of physisorbed overlayer, containing indium chlorides and small amounts of antimony, which can be thermally desorbed at 230 deg. C. The residual carbon contaminations were around 0.2-0.4 ML and consisted of the hydrocarbon molecules. These hydrocarbon contaminations were removed from the surface together with the indium chlorides and antimony overlayer. With increased annealing temperature, a sequence of reconstructions were identified by LEED: (1 x 1), (1 x 3), (4 x 3), and (4 x 1)/c(8 x 2), in the order of decreasing Sb/In ratio. The structural properties of chemically prepared InSb(0 0 1) surface were found to be similar to those obtained by decapping of Sb-capped epitaxial layers

Evaluation of NDA techniques applying to the measurement of alpha-activities in medium or low level radioactive reprocessing wastes (part 5). The development of LiF coating semiconductor detector

Energy Technology Data Exchange (ETDEWEB)

Hattori, Takatoshi; Ishii, Keiichiro [Central Research Inst. of Electric Power Industry, Komae, Tokyo (Japan). Komae Research Lab.

1988-12-01

In order to design the neutron detection system in the non-destructive assay device applying to the measurement of alpha-activity in medium or low level radioactive reprocessing wastes, we examined the property of the LiF coating semiconductor detector applying to gamma-radiation field. The sensitivity for thermal neutron of LiF coating ion implanted detector is 1.6 cps/nv, and reduced to half in about 300 R/h gamma-radiation field. Compared with the other neutron detectors, for example proportional counters, the performance of this detector is almost similar to that of them. This new detector has a merit to be possible to use a dry battery instead of a high voltage supply. (author).

ICC Type II large-format FPA detector assemblies

Science.gov (United States)

Clynne, Thomas H.; Powers, Thomas P.

1997-08-01

ICC presents a new addition to their integrated detector assembly product line with the announcement of their type II large format staring class FPA units. A result of internally funded research and development, the ICC type II detector assembly can accommodate all existing large format staring class PtSi, InSb and MCT focal planes, up to 640 by 480. Proprietary methodologies completely eliminate all FPA stresses to allow for maximum FPA survivability. Standard optical and cryocooler interfaces allow for the use of BEI, AEG, TI SADA Hughes/Magnavox and Joule Thompson coolers. This unit has been qualified to the current SADA II thermal environmental specifications and was tailored around ICC's worldwide industry standard type IV product. Assembled in a real world flexible manufacturing environment, this unit features a wide degree of adaptability and can be easily modified to a user's specifications via standard options and add-ons that include optical interfaces, electrical interfaces and window/filter material selections.

Calibration of Ge(Li) semiconductor detector by method using agar volume source

International Nuclear Information System (INIS)

Yanase, Nobuyuki; Kasai, Atsushi

1979-12-01

The Ge(Li) semiconductor detector was calibrated for measurements of environmental samples. The radioisotopes used for standard sources are 22 Na, 51 Cr, 56 Co, 57 Co, 133 Ba, 137 Cs, 144 Ce and 241 Am. These are mixed with hot agar aqueous solution and fixed uniformly in a cylindrical plastic case in cooling. The agar volume source is advantageous in handling over the fluid aqueous source. The prepared cylindrical standard sources are in diameters 6 and 8 cm and thicknesses 1, 5, 10, 20, 30 and 40 mm (only for 8 cm diameter). The radioactivities of prepared standard sources are between 0.03 μCi and 0.2 μCi. It takes only a week to make the calibration except data processing. The obtained full energy peak efficiency curves include 5 - 10% error due to preparation of agar source, reference radioactivity data of purchased standard solutions, reference data of branching ratio of gamma-ray and sum effect. The efficiency curves, however, are sufficient for quantitative analysis of environmental samples. (author)

Investigation of electro-optical properties of InSb under the influence of spin-orbit interaction at room temperature

Energy Technology Data Exchange (ETDEWEB)

Hilal, Muhammad; Rashid, Bahroz; Khan, Shah Haider; Khan, Afzal, E-mail: afzal_khan@upesh.edu.pk

2016-12-01

To investigate the electro-optical properties of indium antimonide (InSb) for photo-voltaic applications, we performed first principles calculations using density functional theory (DFT). Our DFT calculations are based on full potential linearized augmented plane wave (FP-LAPW) method implemented by WIEN2K code. These calculations are carried out using generalized gradient approximation (GGA) and Tran Blaha modified Becke Johnson (TB-mBJ) approximation for exchange co-relation potential. All the calculations are performed with and without the addition of spin-orbit interaction (SOI) to GGA and TB-mBJ potentials. Addition of SOI gives the results very close to their experimental values and makes the calculations independent of k-points consideration. All the results are calculated by considering the temperature as high as 300 K. To the best of our knowledge, all the previously published theoretical results were calculated at 0 K and no such results have been reported at 300 K. In this article, we are reporting band structure, density of states (DOS) and the band gap dependent optical properties of InSb. The calculated direct band gap is 0.17 eV, refractive index is 3.79 and extinction coefficient as 3.22. - Highlights: • Room temperature calculations of electro-optical properties of InSb. • Effect of SOI on the band structure and critical points. • The addition of SOI made the calculation k-points independent. • Optical properties were calculated without broadening or applying scissor potential.

A new configuration of the Moxon-Rae detector based on Si detector

International Nuclear Information System (INIS)

Niu, H.; Hsu, J.Y.; Liang, J.H.; Yuan, L.G.

2002-01-01

A new Moxon-Rae detector configuration based on Si semiconductor detector was proposed in this paper. Three γ-ray sources, 137 Cs, 60 Co, and 24 Na, were employed to make actual measurements using the new Moxon-Rae detector. The measured pulse height spectra and detection efficiencies were compared with the EGS4 simulated values. The results revealed that the proposed new configuration is indeed a successful method and specially a useful technique for higher energy γ-ray measurement

Development of Radiation Hard Semiconductor Devices for Very High Luminosity Colliders

CERN Multimedia

Joram, C; Gregor, I; Dierlamm, A H; Wilson, F F; Sloan, T; Tuboltsev, Y V; Marone, M; Artuso, M; Cindro, V; Bruzzi, M; Bhardwaj, A; Bohm, J; Mikestikova, M; Walz, M; Breindl, M A; Ruzin, A; Marunko, S; Guskov, J; Haerkoenen, J J; Pospisil, S; Fadeyev, V; Makarenko, L; Kaminski, P; Zelazko, J; Pintilie, L; Radu, R; Nistor, S V; Ullan comes, M; Storasta, J V; Gaubas, E; Lacasta llacer, C; Kilminster, B J; Garutti, E; Buhmann, P; Khomenkov, V; Poehlsen, J A; Fernandez garcia, M; Buttar, C; Eklund, L M; Munoz sanchez, F J; Eremin, V; Aleev, A; Modi, B; Sicho, P; Gisen, A J; Nikolopoulos, K; Van beuzekom, M G; Kozlowski, R; Lozano fantoba, M; Leroy, C; Pernegger, H; Del burgo, R; Vila alvarez, I; Palomo pinto, F R; Lounis, A; Eremin, I; Fadeeva, N; Rogozhkin, S; Shivpuri, R K; Arsenovich, T; Ott, J; Abt, M; Loenker, J; Savic, N; Monaco, V; Visser, J; Lynn, D; Horazdovsky, T; Solar, M; Dervan, P J; Meng, L; Spencer, E N; Kazuchits, N; Brzozowski, A; Kozubal, M; Nistor, L C; Marti i garcia, S; Gomez camacho, J J; Fretwurst, E; Hoenniger, F; Schwandt, J; Hartmann, F; Marchiori, G; Maneuski, D; De capua, S; Williams, M R J; Mandic, I; Gadda, A; Preiss, J; Macchiolo, A; Nisius, R; Grinstein, S; Gonella, L; Wennloef, H L O; Slavicek, T; Masek, P; Casse, G; Flores, D; Tuuva, T; Jimenez ramos, M D C; Charron, S; Rubinskiy, I; Jansen, H; Eichhorn, T V; Matysek, M; Andersson-lindstroem, G; Donegani, E; Bomben, M; Oshea, V; Muenstermann, D; Holmkvist, C W; Oh, A; Lopez paz, I; Verbitskaya, E; Mitina, D; Grigoriev, E; Zaluzhnyy, A; Mikuz, M; Kramberger, G; Scaringella, M; Ranjeet, R; Jain, A; Luukka, P R; Tuominen, E M; Allport, P P; Cartiglia, N; Brigljevic, V; Kohout, Z; Quirion, D; Lauer, K; Collins, P; Gallrapp, C; Rohe, T V; Chauveau, J; Villani, E G; Fox, H; Parkes, C J; Nikitin, A; Spiegel, L G; Creanza, D M; Menichelli, D; Mcduff, H; Carna, M; Weers, M; Weigell, P; Bortoletto, D; Staiano, A; Bellan, R; Szumlak, T; Sopko, V; Pawlowski, M; Pintilie, I; Pellegrini, G; Rafi tatjer, J M; Moll, M; Eckstein, D; Klanner, R; Gomez, G; Gersabeck, M; Cobbledick, J L; Shepelev, A; Golubev, A; Apresyan, A; Lipton, R J; Borgia, A; Zavrtanik, M; Manna, N; Ranjan, K; Chhabra, S; Beyer, J; Korolkov, I; Heintz, U; Sadrozinski, H; Seiden, A; Surma, B; Esteban, S; Kazukauskas, V; Kalendra, V; Mekys, A; Nachman, B P; Tackmann, K; Steinbrueck, G; Pohlsen, T; Calderini, G; Svihra, P; Murray, D; Bolla, G; Zontar, D; Focardi, E; Seidel, S C; Winkler, A D; Altenheiner, S; Parzefall, U; Moser, H; Sopko, B; Buckland, M D; Vaitkus, J V; Ortlepp, T

2002-01-01

The requirements at the Large Hadron Collider (LHC) at CERN have pushed the present day silicon tracking detectors to the very edge of the current technology. Future very high luminosity colliders or a possible upgrade scenario of the LHC to a luminosity of 10$^{35}$ cm$^{-2}$s$^{-1}$ will require semiconductor detectors with substantially improved properties. Considering the expected total fluences of fast hadrons above 10$^{16}$ cm$^{-2}$ and a possible reduced bunch-crossing interval of $\\approx$10 ns, the detector must be ultra radiation hard, provide a fast and efficient charge collection and be as thin as possible.\\\\ We propose a research and development program to provide a detector technology, which is able to operate safely and efficiently in such an environment. Within this project we will optimize existing methods and evaluate new ways to engineer the silicon bulk material, the detector structure and the detector operational conditions. Furthermore, possibilities to use semiconductor materials othe...

Purification and preparation of bismuth(III) iodide for application as radiation semiconductor detector; Purificacao e preparacao do cristal semicondutor de iodeto de bismuto para aplicacao como detector de radiacao

Energy Technology Data Exchange (ETDEWEB)

Ferraz, Caue de Mello

2016-11-01

This study describes the experimental procedure of a BiI{sub 3} purification method powder, aiming a future application of these semiconductor crystals as room temperature radiation detector. The Repeated Vertical Bridgman Technique was applied for the purification, based on the melting and nucleation phenomena. An ampoule filled with a maximum of 25% by volume of BiI{sub 3} powder was mounted into the Bridgman furnace and vertically moved at a speed of 2 millimeters per hour, inside the furnace with programmed thermal gradient and temperature profile, at a temperature maximum of 530 deg C. The reduction of the impurities in the BiI{sub 3}, each purification, was analysed by Instrumental Neutron Activation Analysis (INAA), in order to evaluate the efficiency of the purification technique established in this work, for trace metal impurities. It was demonstrated that the Repeated Bridgman is effective to reduce the concentration of many impurities in BiI{sub 3}, such as Ag, As, Br, Cr, K, Mo, Na and Sb. The crystalline structure of the BiI{sub 3} crystal purified twice and third times was similar to the BiI{sub 3} pattern. However, for BiI{sub 3} powder and purified once an intensity contribution of the BiOI was observed in the diffractograms. It is known that semiconductor detectors fabricated from high purity crystal exhibit significant improvement in their performance compared to those produced from low purity crystals. (author)

Work on the ATLAS semiconductor tracker barrel

CERN Multimedia

Maximilien Brice

2005-01-01

Precision work is performed on the semiconductor tracker barrel of the ATLAS experiment. All work on these delicate components must be performed in a clean room so that impurities in the air, such as dust, do not contaminate the detector. The semiconductor tracker will be mounted in the barrel close to the heart of the ATLAS experiment to detect the path of particles produced in proton-proton collisions.

Influence of low-temperature annealing on InSb properties

International Nuclear Information System (INIS)

Tsitsina, N.P.; Fadeeva, A.P.; Vdovkina, E.E.; Baryshev, N.S.; Aver'yanov, I.S.

1975-01-01

Annealing at 200 deg C during 6 days does not cause inversion of conductivity in n-InSb, leads to the increase of the carrier concentration and the decrease of the specific resistance in samples both of n- and of p-type; these variations being more significant in the material of n-type. The existence of a level at a distance of 0.15-0.17 eV from the ceiling of the valency zone in non-annealed samples of InSb is confirmed. The level is of acceptor type and disappears with low-temperature annealing. The low-temperature annealing practically does not influence the lifetime in p-type samples and results in the 5-20-fold increase in the lifetime in n-type samples

60 keV Ar⁺-ion induced modification of microstructural, compositional, and vibrational properties of InSb

Energy Technology Data Exchange (ETDEWEB)

Datta, D. P.; Garg, S. K.; Som, T., E-mail: tsom@iopb.res.in [SUNAG Laboratory, Institute of Physics, Bhubaneswar, Odisha 751005 (India); Satpati, B. [Surface Physics and Materials Science Division, Saha Institute of Nuclear Physics, 1/AF Bidhannagar, Kolkata 700064 (India); Sahoo, P. K. [School of Physical Sciences, National Institute of Science Education and Research, Bhubaneswar 751005, Odisha (India); Kanjilal, A. [Department of Physics, Shiv Nadar University, Uttar Pradesh 203207 (India); Dhara, S. [Surface and Nanoscience Division, Materials Science Group, Indira Gandhi Centre for Atomic Research, Kalpakkam 603102 (India); Kanjilal, D. [Inter-University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi 110067 (India)

2014-10-14

Room temperature irradiation of InSb(111) by 60 keV Ar⁺-ions at normal (0°) and oblique (60°) angles of incidence led to the formation of nanoporous structure in the high fluence regime of 1×10¹⁷ to 3×10¹⁸ ions cm⁻². While a porous layer comprising of a network of interconnected nanofibers was generated by normal ion incidence, evolution of plate-like structures was observed for obliquely incident ions. Systematic studies of composition and structure using energy dispersive x-ray spectroscopy, Raman spectroscopy, x-ray photoelectron spectroscopy, Raman mapping, grazing incidence x-ray diffraction, and cross-sectional transmission electron microscopy revealed a high degree of oxidation of the ion-induced microstructures with the presence of In₂O₃ and Sb₂O₃ phases and presence of nanocrystallites within the nanoporous structures. The observed structural evolution was understood in terms of processes driven by ion-induced defect accumulation within InSb.

New SRDN-3 probes with a semi-conductor detector for measuring radon activity concentration in underground spaces

International Nuclear Information System (INIS)

Przylibski, T.A.; Lidia Fijalkowska-Lichwa; Elzbieta Kochowska; Krzysztof Kozak; Jadwiga Mazur

2010-01-01

The article presents new Polish probes SRDN-3, developed at the Institute of Nuclear Chemistry and Technology in Warsaw, equipped with a semi-conductor detector used for continuous measurements of 222 Rn activity concentration. Due to a relatively high lower detection limit, the device is dedicated for use in underground spaces-caves, adits, mines, tourist routes in strongholds, pyramids, etc. Its structure allows for difficult conditions in which the device is transported to the measurement site, as well as hard operating conditions caused chiefly by large ambient relative humidity, reaching up to 100%. The authors present calibration results of these appliances, as well as the results of their work in a cave and an adit in the Sudetes (SW Poland). After almost 2 years of working in difficult conditions, the probes displayed high reliability. No defects of the semi-conductor detectors or the electronics were observed, which ensured problem-free communication of the probe-programmer-PC set. Thanks to this, the authors have a 2 year stock of data, recorded hourly by five probes, at their disposal. The only element that did not withstand the test of extreme operating conditions was one of the combined relative humidity and temperature sensors. No powering problems were observed either, and the batteries were replaced once a year, before the winter season. Also the programmer functioned faultlessly, enabling data transmission to a PC, which, being much more sensitive to operating conditions, had been placed away from the site of probe exposure. After using more sensitive temperature, relative humidity and pressure sensors, SRDN-3 probes will certainly prove an excellent tool for microclimate measurements (including measurement of air-atmosphere exchange) in caves and other underground sites. Even nowadays they are already a satisfactory tool for monitoring 222 Rn concentration in underground spaces. (author)

Investigation of radiation defects in InSb formed by charged high energy nuclear particles

International Nuclear Information System (INIS)

Vikhlij, G.A.; Karpenko, A.Ya.; Litovchenko, P.G.; Tarabrova, L.I.; Groza, A.A.

1990-01-01

A possibility of creation of high concentrations of radiation defects in the bulk of InSb samples by 47 MeV protons and 80 MeV alpha particles is considered. Dose dependences of electroconductivity, optical absorption spectra as well as temperature and field relations of galvanomagnetic properties of samples with defects are investigated. Annealing stages and electrical properties of defects annealed at these stages are determined. 17 refs.; 7 figs

Semiconductor pixel detectors for digital mammography

International Nuclear Information System (INIS)

Novelli, M.; Amendolia, S.R.; Bisogni, M.G.; Boscardin, M.; Dalla Betta, G.F.; Delogu, P.; Fantacci, M.E.; Quattrocchi, M.; Rosso, V.; Stefanini, A.; Venturelli, L.; Zucca, S.

2003-01-01

We present some results obtained with silicon and gallium arsenide pixel detectors to be applied in the field of digital mammography. Even though GaAs is suitable for medical imaging applications thanks to its atomic number, which allows a very good detection efficiency, it often contains an high concentrations of traps which decrease the charge collection efficiency (CCE). So we have analysed both electrical and spectroscopic performance of different SI GaAs diodes as a function of concentrations of dopants in the substrate, in order to find a material by which we can obtain a CCE allowing the detection of all the photons that interact in the detector. Nevertheless to be able to detect low contrast details, efficiency and CCE are not the only parameters to be optimized; also the stability of the detection system is fundamental. In the past we have worked with Si pixel detectors; even if its atomic number does not allow a good detection efficiency at standard thickness, it has a very high stability. So keeping in mind the need to increase the Silicon detection efficiency we performed simulations to study the behaviour of the electrical potential in order to find a geometry to avoid the risk of electrical breakdown

Semiconductor pixel detectors for digital mammography

Energy Technology Data Exchange (ETDEWEB)

Novelli, M. E-mail: marzia.novelli@pi.infn.it; Amendolia, S.R.; Bisogni, M.G.; Boscardin, M.; Dalla Betta, G.F.; Delogu, P.; Fantacci, M.E.; Quattrocchi, M.; Rosso, V.; Stefanini, A.; Venturelli, L.; Zucca, S

2003-08-21

We present some results obtained with silicon and gallium arsenide pixel detectors to be applied in the field of digital mammography. Even though GaAs is suitable for medical imaging applications thanks to its atomic number, which allows a very good detection efficiency, it often contains an high concentrations of traps which decrease the charge collection efficiency (CCE). So we have analysed both electrical and spectroscopic performance of different SI GaAs diodes as a function of concentrations of dopants in the substrate, in order to find a material by which we can obtain a CCE allowing the detection of all the photons that interact in the detector. Nevertheless to be able to detect low contrast details, efficiency and CCE are not the only parameters to be optimized; also the stability of the detection system is fundamental. In the past we have worked with Si pixel detectors; even if its atomic number does not allow a good detection efficiency at standard thickness, it has a very high stability. So keeping in mind the need to increase the Silicon detection efficiency we performed simulations to study the behaviour of the electrical potential in order to find a geometry to avoid the risk of electrical breakdown.

ZnCdMgSe as a Materials Platform for Advanced Photonic Devices: Broadband Quantum Cascade Detectors and Green Semiconductor Disk Lasers

Science.gov (United States)

De Jesus, Joel

The ZnCdMgSe family of II-VI materials has unique and promising characteristics that may be useful in practical applications. For example they can be grown lattice matched to InP substrates with lattice matched bandgaps that span from 2.1 to 3.5 eV, they can be successfully doped n-type, have a large conduction band offset (CBO) with no intervalley scattering present when strained, they have lower average phonon energies, and the InP lattice constant lies in the middle of the ZnSe and CdSe binaries compounds giving room to experiment with tensile and compressive stress. However they have not been studied in detail for use in practical devices. Here we have identified two types of devices that are being currently developed that benefit from the ZnCdMgSe-based material properties. These are the intersubband (ISB) quantum cascade (QC) detectors and optically pumped semiconductor lasers that emit in the visible range. The paucity for semiconductor lasers operating in the green-orange portion of the visible spectrum can be easily overcome with the ZnCdMgSe materials system developed in our research. The non-strain limited, large CBO available allows to expand the operating wavelength of ISB devices providing shorter and longer wavelengths than the currently commercially available devices. This property can also be exploited to develop broadband room temperature operation ISB detectors. The work presented here focused first on using the ZnCdMgSe-based material properties and parameter to understand and predict the interband and intersubband transitions of its heterostructures. We did this by studying an active region of a QC device by contactless electroreflectance, photoluminescence, FTIR transmittance and correlating the measurements to the quantum well structure by transfer matrix modeling. Then we worked on optimizing the ZnCdMgSe material heterostructures quality by studying the effects of growth interruptions on their optical and optoelectronic properties of

Particlc detectors. Foundations and applications; Teilchendetektoren. Grundlagen und Anwendungen

Energy Technology Data Exchange (ETDEWEB)

Kolanoski, Hermann; Wermes, Norbert

2016-08-01

The following topics are dealt with: Interaction of particles with matter, motion of charge carriers in electric and magnetic fields, signal generation by moving charges, non-electronic detectors, gas-filled detectors, semiconductor detectors, track reconstruction and momentum measurement, photodetectors, Cherenkov detectors, transition-radiation detectors, scintillation detectors, particle identification, calorimeters, detection of cosmic particles, signal processing and noise, trigger and data acquisition systems. (HSI)

Spin-splitting calculation for zincblende semiconductors using an atomic bond-orbital model

International Nuclear Information System (INIS)

Kao, Hsiu-Fen; Lo, Ikai; Chiang, Jih-Chen; Wang, Wan-Tsang; Hsu, Yu-Chi; Wu, Chieh-Lung; Gau, Ming-Hong; Chen, Chun-Nan; Ren, Chung-Yuan; Lee, Meng-En

2012-01-01

We develop a 16-band atomic bond-orbital model (16ABOM) to compute the spin splitting induced by bulk inversion asymmetry in zincblende materials. This model is derived from the linear combination of atomic-orbital (LCAO) scheme such that the characteristics of the real atomic orbitals can be preserved to calculate the spin splitting. The Hamiltonian of 16ABOM is based on a similarity transformation performed on the nearest-neighbor LCAO Hamiltonian with a second-order Taylor expansion over k-vector at the Γ point. The spin-splitting energies in bulk zincblende semiconductors, GaAs and InSb, are calculated, and the results agree with the LCAO and first-principles calculations. However, we find that the spin-orbit coupling between bonding and antibonding p-like states, evaluated by the 16ABOM, dominates the spin splitting of the lowest conduction bands in the zincblende materials.

Imaging detectors and electronics - A view of the future

International Nuclear Information System (INIS)

Spieler, Helmuth

2004-01-01

Imaging sensors and readout electronics have made tremendous strides in the past two decades. The application of modern semiconductor fabrication techniques and the introduction of customized monolithic integrated circuits have made large scale imaging systems routine in high energy physics. This technology is now finding its way into other areas, such as space missions, synchrotron light sources, and medical imaging. I review current developments and discuss the promise and limits of new technologies. Several detector systems are described as examples of future trends. The discussion emphasizes semiconductor detector systems, but I also include recent developments for large-scale superconducting detector arrays

Two-section semiconductor optical amplifier used as an efficient channel dropping node

DEFF Research Database (Denmark)

Jørgensen, Carsten; Storkfelt, Niels; Durhuus, T.

1992-01-01

High responsivity in a two-section semiconductor optical amplifier/detector, serving as a channel dropping mode is described. A simple receiver constructed using a 50 Ω amplifier with a sensitivity of -30.2 dBm at 140 Mb/s is demonstrated......High responsivity in a two-section semiconductor optical amplifier/detector, serving as a channel dropping mode is described. A simple receiver constructed using a 50 Ω amplifier with a sensitivity of -30.2 dBm at 140 Mb/s is demonstrated...

Indium antimonide quantum well structures for electronic device applications

Science.gov (United States)

Edirisooriya, Madhavie

The electron effective mass is smaller in InSb than in any other III-V semiconductor. Since the electron mobility depends inversely on the effective mass, InSb-based devices are attractive for field effect transistors, magnetic field sensors, ballistic transport devices, and other applications where the performance depends on a high mobility or a long mean free path. In addition, electrons in InSb have a large g-factor and strong spin orbit coupling, which makes them well suited for certain spin transport devices. The first n-channel InSb high electron mobility transistor (HEMT) was produced in 2005 with a power-delay product superior to HEMTs with a channel made from any other III-V semiconductor. The high electron mobility in the InSb quantum-well channel increases the switching speed and lowers the required supply voltage. This dissertation focuses on several materials challenges that can further increase the appeal of InSb quantum wells for transistors and other electronic device applications. First, the electron mobility in InSb quantum wells, which is the highest for any semiconductor quantum well, can be further increased by reducing scattering by crystal defects. InSb-based heteroepitaxy is usually performed on semi-insulating GaAs (001) substrates due to the lack of a lattice matched semi-insulating substrate. The 14.6% mismatch between the lattice parameters of GaAs and InSb results in the formation of structural defects such as threading dislocations and microtwins which degrade the electrical and optical properties of InSb-based devices. Chapter 1 reviews the methods and procedures for growing InSb-based heterostructures by molecular beam epitaxy. Chapters 2 and 3 introduce techniques for minimizing the crystalline defects in InSb-based structures grown on GaAs substrates. Chapter 2 discusses a method of reducing threading dislocations by incorporating AlyIn1-ySb interlayers in an AlxIn1-xSb buffer layer and the reduction of microtwin defects by growth

Experimental confirmation of a new semiconductor detector principle

International Nuclear Information System (INIS)

Kemmer, J.; Lutz, G.; Schuster, K.; Sterzik, M.; Strueder, L.; Prechtel, U.; Ziemann, T.

1990-01-01

A new detector-amplification principle proposed by Kemmer and Lutz in 1986 has been experimentally verified. Outstanding features of this device are the built-in amplification, the signal charge storage capability and the possibility of repeated non-destructive readout. The device was used for detection of X-rays from a 241 Am and from an 55 Fe source. Very low noise figures (σ=30 electrons corresponding to an energy resolution of FWHM=250 eV at 6 keV energy) have been obtained at room temperature. Various applications of the structure either as detector or as purely electronic element are possible. One of the most intriguing is the use as a pixel detector with random access non-destructive readout. This device may be operated at very low power, as only reading (of one single pixel at a time), not storing, consumes power. Further options of the device are fast clearing, gating and variation of the pixel size during readout. The latter property can be used to drastically increase the readout speed compared to more standard two dimensional devices as e.g. CCD detectors, as one may restrict the high density readout to regions of interest determined beforehand by a coarse scan of the whole detector. An alternative use of the device is as an analog or digital memory, or as a simple transistor by a coarse scan of the whole detector. An alternative use of the device is as an analog or digital memory, or as a simple transistor with drastically reduced parasitic capacitances. Possible further developments are the combination with a novel three dimensional analog storage device which may either be used as a detector with built-in storage of several charge images or as a three-dimensional analog memory. (orig.)

Epitaxial silicon semiconductor detectors, past developments, future prospects

International Nuclear Information System (INIS)

Gruhn, C.R.

1976-01-01

A review of the main physical characteristics of epitaxial silicon as it relates to detector development is presented. As examples of applications results are presented on (1) epitaxial silicon avalanche diodes (ESAD); signal-to-noise, non-linear aspects of the avalanche gain mechanism, gain-bandwidth product, (2) ultrathin epitaxial silicon surface barrier (ESSB) detectors, response to heavy ions, (3) an all-epitaxial silicon diode (ESD), response to heavy ions, charge transport and charge defect. Future prospects of epitaxial silicon as it relates to new detector designs are summarized

Optical characterization of wide-gap detector-grade semiconductors

International Nuclear Information System (INIS)

Elshazly, E.S.

2011-01-01

Wide bandgap semiconductors are being widely investigated because they have the potential to satisfy the stringent material requirements of high resolution, room temperature gamma-ray spectrometers. In particular, Cadmium Zinc Telluride (Cd 1-x Zn x Te, x∼0.1) and Thallium Bromide (Tl Br), due to their combination of high resistivity, high atomic number and good electron mobility, have became very promising candidates for use in X- and gamma-ray detectors operating at room temperature. In this study, carrier trapping times were measured in CZT and Tl Br as a function of temperature and material quality. Carrier lifetimes and tellurium inclusion densities were measured in detector-grade Cadmium Zinc Telluride (CZT) crystals grown by the High Pressure Bridgman method and Modified Bridgman method. Excess carriers were produced in the material using a pulsed YAG laser with a 1064 nm wavelength and 7 ns pulse width. Infrared microscopy was used to measure the tellurium defect densities in CZT crystals. The electronic decay was optically measured at room temperature. Spatial mapping of lifetimes and defect densities in CZT was performed to determine the relationship between defect density and electronic decay. A significant and strong correlation was found between the volume fraction of tellurium inclusions and the carrier trapping time. Carrier trapping times and tellurium inclusions were measured in CZT in the temperature range from 300 K to 110 K and the results were analyzed using a theoretical trapping model. Spatial mapping of carrier trapping times and defect densities in CZT was performed to determine the relationship between defect density and electronic decay. While a strong correlation between trapping time and defect density of tellurium inclusions was observed, there was no significant change in the trap energy. Carrier trapping times were measured in detector grade thallium bromide (Tl Br) and compared with the results for cadmium zinc telluride (CZT) in

Development of an X-ray detector using surface plasmon resonance

International Nuclear Information System (INIS)

Kunieda, Y.; Nagashima, K.; Hasegawa, N.; Ochi, Y.

2009-01-01

A new X-ray detector using surface plasmon resonance (SPR) is proposed. The detector consists of a prism coated with a thin metal film and semiconductor film. Optical laser pulse induces SPR condition on the metal surface, and synchronized X-ray pulse which is absorbed into the semiconductor film can be detected by measuring the change of the resonance condition of the surface plasmon. The expected time and spatial resolution of this detector is better than that of conventional X-ray detectors by combining this SPR measurement with ultra-short laser pulse as the probe beam. Our preliminary investigation using Au and ZnSe coated prism implies this scheme works well as the detector for the ultra-short X-ray pulse.

COHERENT LIDAR SYSTEM BASED ON A SEMICONDUCTOR LASER AND AMPLIFIER

DEFF Research Database (Denmark)

2009-01-01

The present invention relates to a compact, reliable and low-cost coherent LIDAR (Light Detection And Ranging) system for remote wind-speed determination, determination of particle concentration, and/or temperature based on an all semiconductor light source and related methods. The present...... invention provides a coherent LIDAR system comprising a semiconductor laser for emission of a measurement beam of electromagnetic radiation directed towards a measurement volume for illumination of particles in the measurement volume, a reference beam generator for generation of a reference beam, a detector...... for generation of a detector signal by mixing of the reference beam with light emitted from the particles in the measurement volume illuminated by the measurement beam, and a signal processor for generating a velocity signal corresponding to the velocity of the particles based on the detector signal....

Radial semiconductor drift chambers

International Nuclear Information System (INIS)

Rawlings, K.J.

1987-01-01

The conditions under which the energy resolution of a radial semiconductor drift chamber based detector system becomes dominated by the step noise from the detector dark current have been investigated. To minimise the drift chamber dark current attention should be paid to carrier generation at Si/SiO 2 interfaces. This consideration conflicts with the desire to reduce the signal risetime: a higher drift field for shorter signal pulses requires a larger area of SiO 2 . Calculations for the single shaping and pseudo Gaussian passive filters indicate that for the same degree of signal risetime sensitivity in a system dominated by the step noise from the detector dark current, the pseudo Gaussian filter gives only a 3% improvement in signal/noise and 12% improvement in rate capability compared with the single shaper performance. (orig.)

Pion minus energy measurement by a multilayer semiconductor spectrometer

International Nuclear Information System (INIS)

Gornov, M.G.; Gurov, Yu.B.; Lapushkin, S.V.

1981-01-01

A technique for determining π - meson energy by a laminated semiconductor spectrometer is described. Results of experimental test of the technique carried out using beams of meson track of the JINR synchrocyclotron and three Si(Li) detectors are given. A specific feature of the technique is that chi 2 criterium with a functional written through exact thicknesses of semiconductor detectors was used for separating events with disturbance of ionization dependence and determining particle energy. It is shown that the absolute resolution can be not worse than 0.5 MeV in a wide energy range. It is concluded that the technique suggested is suitable for measuring energy of any charged particles with indefinite energy release during stoppage [ru

TCT characterization of different semiconductor materials for particle detection

International Nuclear Information System (INIS)

Fink, J.; Lodomez, P.; Krueger, H.; Pernegger, H.; Weilhammer, P.; Wermes, N.

2006-01-01

The development of digital semiconductor based X-ray detectors necessitates a detailed understanding of the applied sensor material. Under this premise a broad-band transient current technique (TCT) setup has been developed and used to characterize different semiconductors. The measurements are based on the generation of electrical charges within the sensor material and the subsequent time-resolved analysis of the charge carrier movement. From the recorded current pulses the charge collection efficiency, the charge carrier mobility and the electric field profile have been extracted. The examined materials are silicon p in n diodes, ohmic and Schottky contacted CdTe detectors, CdZnTe (CZT) crystals with Schottky contacts as well as two single-crystal CVD-diamonds

Operation and Performance of the ATLAS Semiconductor Tracker

International Nuclear Information System (INIS)

Barlow, Nick

2013-06-01

The ATLAS detector is the largest of the four main particle detectors at the Large Hadron Collider at CERN, Switzerland. A crucial requirement for it to accomplish its physics goals is efficient and precise tracking of charged particles in the region around the point where proton-proton collisions take place. This role is performed by the ATLAS Inner Detector, of which the Semiconductor Tracker (SCT) is a key component. I will briefly describe the design and layout of the SCT, before discussing the commissioning of the detector and its operation over the course of LHC Run 1. (authors)

Operation and Performance of the ATLAS Semiconductor Tracker

CERN Document Server

Barlow, N; The ATLAS collaboration

2013-01-01

The ATLAS detector is the largest of the four main particle detectors at the Large Hadron Collider at CERN, Switzerland. A crucial requirement for it to accomplish its physics goals is efficient and precise tracking of charged particles in the region around the point where proton-proton collisions take place. This role is performed by the ATLAS Inner Detector, of which the Semiconductor Tracker (SCT) is a key component. I will briefly describe the design and layout of the SCT, before discussing the commissioning of the detector and its operation over the course of LHC Run 1.

Development of revitalisation technique for impaired lithium doped germanium detector

International Nuclear Information System (INIS)

Singh, N.S.B.; Rafi Ahmed, A.G.; Balasubramanian, G.R.

1994-01-01

Semiconductor detectors play very significant role in photon detection and are important tools in the field of gamma spectroscopy. Lithium doped germanium detectors belong to this category. The development of revitalisation technique for these impaired detectors are discussed in this report

II-VI Narrow-Bandgap Semiconductors for Optoelectronics

Science.gov (United States)

Baker, Ian

The field of narrow-gap II-VI materials is dominated by the compound semiconductor mercury cadmium telluride, (Hg1-x Cd x Te or MCT), which supports a large industry in infrared detectors, cameras and infrared systems. It is probably true to say that HgCdTe is the third most studied semiconductor after silicon and gallium arsenide. Hg1-x Cd x Te is the material most widely used in high-performance infrared detectors at present. By changing the composition x the spectral response of the detector can be made to cover the range from 1 μm to beyond 17 μm. The advantages of this system arise from a number of features, notably: close lattice matching, high optical absorption coefficient, low carrier generation rate, high electron mobility and readily available doping techniques. These advantages mean that very sensitive infrared detectors can be produced at relatively high operating temperatures. Hg1-x Cd x Te multilayers can be readily grown in vapor-phase epitaxial processes. This provides the device engineer with complex doping and composition profiles that can be used to further enhance the electro-optic performance, leading to low-cost, large-area detectors in the future. The main purpose of this chapter is to describe the applications, device physics and technology of II-VI narrow-bandgap devices, focusing on HgCdTe but also including Hg1-x Mn x Te and Hg1-x Zn x Te. It concludes with a review of the research and development programs into third-generation infrared detector technology (so-called GEN III detectors) being performed in centers around the world.

Fabrication of Superconducting Detectors for Studying the Universe

Science.gov (United States)

Brown, Ari-David

2012-01-01

Superconducting detectors offer unparalleled means of making astronomical/cosmological observations. Fabrication of these detectors is somewhat unconventional; however, a lot of novel condensed matter physics/materials scientific discoveries and semiconductor fabrication processes can be generated in making these devices.

Cryogenic detectors for particle physics

International Nuclear Information System (INIS)

Gonzalez-Mestres, L.; Perret-Gallix, D.

1988-11-01

A comprehensive introduction to cryogenic detector developments for particle physics is presented, covering conventional detectors cooled to low temperature (scintillators and semiconductors), superconductive and thermal sensitive devices, as well as the basics of cold electronics. After giving a critical overview of current work, we elaborate on possible new ways for further improvements and briefly evaluate the feasibility of the main proposed applications

A hybrid, broadband, low noise charge preamplifier for simultaneous high resolution energy and time information with large capacitance semiconductor detector

International Nuclear Information System (INIS)

Goyot, M.

1975-05-01

A broadband and low noise charge preamplifier was developed in hybrid form, for a recoil spectrometer requiring large capacitance semiconductor detectors. This new hybrid and low cost preamplifier permits good timing information without compromising energy resolution. With a 500 pF external input capacity, it provides two simultaneous outputs: (i) the faster, current sensitive, with a rise time of 9 nsec and 2 mV/MeV on 50 ohms load, (ii) the lower, charge sensitive, with an energy resolution of 14 keV (FWHM Si) using a RC-CR ungated filter of 2 μsec and a FET input protection [fr

Infrared detectors and emitters on the basis of semiconductor quantum structures

International Nuclear Information System (INIS)

Kruck, P. R.

1997-08-01

Intersubband transitions in Si/SiGe and GaAs/AlGaAs semiconductor quantum structures have been investigated with respect to possible application as infrared detectors and emitters. Investigation of the polarization dependence of subband absorption in Si/SiGe quantum wells shows both transverse magnetic and transverse electric polarized excitations. Intersubband transitions to several excited states are identified by comparison with self-consistent Luttinger-Kohn type calculations. On the basis of these investigations a quantum well infrared photodetector operating between 3 and 8 μm with a detectivity as high as D*=2 x 10 10 cm Hz 1/2 W -1 under normal incidence illumination and at an operating temperature of T=77K is realized. The polarization dependence of the photoconductivity shows the importance of both the absorption and the vertical transport properties of the photoexcited carriers for the detection mechanism. On the basis of the GaAs/AlGaAs material system a unipolar quantum cascade light emitting diode (LED) has been realized. The LED operates at a wavelength of 6.9 μm. A detailed analysis of the electroluminescence spectra shows a linewidth as narrow as 14 meV at cryogenic temperatures, increasing to 20 meV at room temperature. For typical drive-current densities of 1 kA/cm 2 the optical output power lies in the ten nanowatt range. (author)

Experimental characterization of semiconductor-based thermal neutron detectors

Energy Technology Data Exchange (ETDEWEB)

Bedogni, R., E-mail: roberto.bedogni@lnf.infn.it [IFNF—LNF, via E. Fermi n. 40, 00044 Frascati, Roma (Italy); Bortot, D.; Pola, A.; Introini, M.V.; Lorenzoli, M. [Politecnico di Milano, Dipartimento di Energia, via La Masa 34, 20156 Milano (Italy); INFN—Milano, Via Celoria 16, 20133 Milano (Italy); Gómez-Ros, J.M. [IFNF—LNF, via E. Fermi n. 40, 00044 Frascati, Roma (Italy); CIEMAT, Av. Complutense 40, 28040 Madrid (Spain); Sacco, D. [IFNF—LNF, via E. Fermi n. 40, 00044 Frascati, Roma (Italy); INAIL—DIT, Via di Fontana Candida 1, 00040 Monteporzio Catone (Italy); Esposito, A.; Gentile, A.; Buonomo, B. [IFNF—LNF, via E. Fermi n. 40, 00044 Frascati, Roma (Italy); Palomba, M.; Grossi, A. [ENEA Triga RC-1C.R. Casaccia, via Anguillarese 301, 00060 S. Maria di Galeria, Roma (Italy)

2015-04-21

In the framework of NESCOFI@BTF and NEURAPID projects, active thermal neutron detectors were manufactured by depositing appropriate thickness of {sup 6}LiF on commercially available windowless p–i–n diodes. Detectors with different radiator thickness, ranging from 5 to 62 μm, were manufactured by evaporation-based deposition technique and exposed to known values of thermal neutron fluence in two thermal neutron facilities exhibiting different irradiation geometries. The following properties of the detector response were investigated and presented in this work: thickness dependence, impact of parasitic effects (photons and epithermal neutrons), linearity, isotropy, and radiation damage following exposure to large fluence (in the order of 10{sup 12} cm{sup −2})

The ATLAS semiconductor tracker (SCT)

International Nuclear Information System (INIS)

Jackson, J.N.

2005-01-01

The ATLAS detector (CERN,LHCC,94-43 (1994)) is designed to study a wide range of physics at the CERN Large Hadron Collider (LHC) at luminosities up to 10 34 cm -2 s -1 with a bunch-crossing rate of 40 MHz. The Semiconductor Tracker (SCT) forms a key component of the Inner Detector (vol. 1, ATLAS TDR 4, CERN,LHCC 97-16 (1997); vol. 2, ATLAS TDR 5, CERN,LHCC 97-17 (1997)) which is situated inside a 2 T solenoid field. The ATLAS Semiconductor Tracker (SCT) utilises 4088 silicon modules with binary readout mounted on carbon fibre composite structures arranged in the forms of barrels in the central region and discs in the forward region. The construction of the SCT is now well advanced. The design of the SCT modules, services and support structures will be briefly outlined. A description of the various stages in the construction process will be presented with examples of the performance achieved and the main difficulties encountered. Finally, the current status of the construction is reviewed

Determination of the electron-hole pair creation energy for semiconductors from the spectral responsivity of photodiodes

CERN Document Server

Scholze, F; Kuschnerus, P; Rabus, H; Richter, M; Ulm, G

2000-01-01

Ionizing radiation can be detected by the measurement of the charge carriers produced in a detector. The improved semiconductor technology now allows detectors operating near the physical limits of the detector materials to be designed. The mean energy required for producing an electron-hole pair, W, is a material property of the semiconductor. Here, the determination of W from the spectral responsivity of photodiodes is demonstrated. Using spectrally dispersed synchrotron radiation, different types of semiconductor photodiodes have been examined in the UV-, VUV-, and soft X-ray spectral range. Their spectral responsivity was determined with relative uncertainties between 0.4% and 1% using a cryogenic electrical-substitution radiometer as primary detector standard. Results are presented for silicon n-on-p junction photodiodes and for GaAsP/Au Schottky diodes at room temperature. The investigations for silicon covered the complete spectral range from 3 to 1500 eV, yielding a constant value W=(3.66+-0.03) eV fo...

Prototype of high resolution PET using resistive electrode position sensitive CdTe detectors

International Nuclear Information System (INIS)

Kikuchi, Yohei; Ishii, Keizo; Matsuyama, Shigeo; Yamazaki, Hiromichi

2008-01-01

Downsizing detector elements makes it possible that spatial resolutions of positron emission tomography (PET) cameras are improved very much. From this point of view, semiconductor detectors are preferable. To obtain high resolution, the pixel type or the multi strip type of semiconductor detectors can be used. However, in this case, there is a low packing ratio problem, because a dead area between detector arrays cannot be neglected. Here, we propose the use of position sensitive semiconductor detectors with resistive electrode. The CdTe detector is promising as a detector for PET camera because of its high sensitivity. In this paper, we report development of prototype of high resolution PET using resistive electrode position sensitive CdTe detectors. We made 1-dimensional position sensitive CdTe detectors experimentally by changing the electrode thickness. We obtained 750 A as an appropriate thickness of position sensitive detectors, and evaluated the performance of the detector using a collimated 241 Am source. A good position resolution of 1.2 mm full width half maximum (FWHM) was obtained. On the basis of the fundamental development of resistive electrode position sensitive detectors, we constructed a prototype of high resolution PET which was a dual head type and was consisted of thirty-two 1-dimensional position sensitive detectors. In conclusion, we obtained high resolutions which are 0.75 mm (FWHM) in transaxial, and 1.5 mm (FWHM) in axial. (author)

Energy resolution and throughput of a new real time digital pulse processing system for x-ray and gamma ray semiconductor detectors

International Nuclear Information System (INIS)

Abbene, L; Gerardi, G; Raso, G; Brai, M; Principato, F; Basile, S

2013-01-01

New generation spectroscopy systems have advanced towards digital pulse processing (DPP) approaches. DPP systems, based on direct digitizing and processing of detector signals, have recently been favoured over analog pulse processing electronics, ensuring higher flexibility, stability, lower dead time, higher throughput and better spectroscopic performance. In this work, we present the performance of a new real time DPP system for X-ray and gamma ray semiconductor detectors. The system is based on a commercial digitizer equipped with a custom DPP firmware, developed by our group, for on-line pulse shape and height analysis. X-ray and gamma ray spectra measurements with cadmium telluride (CdTe) and germanium (Ge) detectors, coupled to resistive-feedback preamplifiers, highlight the excellent performance of the system both at low and high rate environments (up to 800 kcps). A comparison with a conventional analog electronics showed the better high-rate capabilities of the digital approach, in terms of energy resolution and throughput. These results make the proposed DPP system a very attractive tool for both laboratory research and for the development of advanced detection systems for high-rate-resolution spectroscopic imaging, recently proposed in diagnostic medicine, industrial imaging and security screening

Temperature distribution model for the semiconductor dew point detector

Science.gov (United States)

Weremczuk, Jerzy; Gniazdowski, Z.; Jachowicz, Ryszard; Lysko, Jan M.

2001-08-01

The simulation results of temperature distribution in the new type silicon dew point detector are presented in this paper. Calculations were done with use of the SMACEF simulation program. Fabricated structures, apart from the impedance detector used to the dew point detection, contained the resistive four terminal thermometer and two heaters. Two detector structures, the first one located on the silicon membrane and the second one placed on the bulk materials were compared in this paper.

Simulation of a silicon neutron detector coated with TiB2 absorber

International Nuclear Information System (INIS)

Krapohl, D; Nilsson, H-E; Petersson, S; Slavicek, T; Thungström, G; Pospisil, S

2012-01-01

Neutron radiation cannot be directly detected in semiconductor detectors and therefore needs converter layers. Planar clean-room processing can be used in the manufacturing process of semiconductor detectors with metal layers to produce a cost-effective device. We used the Geant4 Monte-Carlo toolkit to simulate the performance of a semiconductor neutron detector. A silicon photo-diode was coated with vapour deposited titanium, aluminium thin films and a titaniumdiboride (TiB 2 ) neutron absorber layer. The neutron capture reaction 10B(n, alpha)7Li is taken advantage of to create charged particles that can be counted. Boron-10 has a natural abundance of about SI 19.8%. The emitted alpha particles are absorbed in the underlying silicon detector. We varied the thickness of the converter layer and ran the simulation with a thermal neutron source in order to find the best efficiency of the TiB 2 converter layer and optimize the clean room process.

Characterization of InSb layers on GaAs substrates using infrared reflectance and a modified oscillator formula

Energy Technology Data Exchange (ETDEWEB)

Engelbrecht, J.A.A., E-mail: Japie.Engelbrecht@nmmu.ac.z [Physics Department, Nelson Mandela Metropolitan University, Box 77000, Port Elizabeth 6031 (South Africa); Wagener, M.C. [Physics Department, Nelson Mandela Metropolitan University, Box 77000, Port Elizabeth 6031 (South Africa)

2009-12-01

InSb epilayers on GaAs substrates are analyzed using infrared reflectance spectroscopy, but employing a modified Drude oscillator formula. The modified formula enables the determination of 13 parameters: six dielectric parameters for both layer and substrate separately, as well as the thickness of the layer. The formula is tested against previously published data, and to characterize layers grown in this laboratory.

Characterization of InSb layers on GaAs substrates using infrared reflectance and a modified oscillator formula

International Nuclear Information System (INIS)

Engelbrecht, J.A.A.; Wagener, M.C.

2009-01-01

InSb epilayers on GaAs substrates are analyzed using infrared reflectance spectroscopy, but employing a modified Drude oscillator formula. The modified formula enables the determination of 13 parameters: six dielectric parameters for both layer and substrate separately, as well as the thickness of the layer. The formula is tested against previously published data, and to characterize layers grown in this laboratory.

Directional Sensitivity in Light-Mass Dark Matter Searches with Single-Electron-Resolution Ionization Detectors

Science.gov (United States)

Kadribasic, Fedja; Mirabolfathi, Nader; Nordlund, Kai; Sand, Andrea E.; Holmström, Eero; Djurabekova, Flyura

2018-03-01

We propose a method using solid state detectors with directional sensitivity to dark matter interactions to detect low-mass weakly interacting massive particles (WIMPs) originating from galactic sources. In spite of a large body of literature for high-mass WIMP detectors with directional sensitivity, no available technique exists to cover WIMPs in the mass range semiconductor detectors allow for directional sensitivity once properly calibrated. We examine the commonly used semiconductor material response to these low-mass WIMP interactions.

Coakial gamma ray detector and method therefor

International Nuclear Information System (INIS)

Harchol, M.

1977-01-01

A coaxial gamma ray detector is fabricated using intrinsic Ge semiconductor material in a geometry whereby full depletion of electrical carriers is prevented within a small region proximate the point of electrical contact thereby allowing greater biasing potentials across the detector and, consequently, providing reduced electronic noise and increased energy resolution

SÍNTESIS, CARACTERIZACIÓN ESTRUCTURAL Y PROPIEDADES MAGNÉTICAS DE COMPUESTOS SEMICONDUCTORES DEL TIPO Dy (x In (1-x Sb ISYNTHESIS, STRUCTURAL CHARACTERIZATION AND MAGNETIC PROPERTIES OF SEMICONDUCTOR COMPOUNDS OF TYPE Dy x In (1-x S

Directory of Open Access Journals (Sweden)

Euclides J. Velazco Rivero

2018-04-01

Full Text Available Semiconductor compounds of molecular formula of type DyxIn (1-x Sb (x = 0,02; 0,03; 0,04; 0,05; 0,06 y 0,07 were synthesized by means of direct interaction of the elements under heat treatment to 550°C during 11 days in vacuum sealed quartz ampoules. The analyses by X-rays diffraction showed that the compounds with x = 0,02; 0,03 y 0,04 presented pure phases of InSb doped with Dy without presence of alternate phases of DySb. These compounds, analyzed by scanning electronic microscopy – SEM, showed particles with a variety of shapes and sizes each one. Whereas the magnetic susceptibility measurements showed that those doped compounds, in spite of their paramagnetic behavior, the predominant magnetic interaction is ferromagnetic due to their positive Curie temperature (θ

A comparative TCAD assessment of III-V channel materials for future high speed and low power logic applications

Science.gov (United States)

Gomes, U. P.; Takhar, K.; Ranjan, K.; Rathi, S.; Biswas, D.

2015-02-01

In this work, by means physics based drift-diffusion simulations, three different narrow band gap semiconductors; InAs, InSb and In0.53Ga0.47As, and their associated heterostructures have been studied for future high speed and low power logic applications. It is observed that In0.53Ga0.47As has higher immunity towards short channel effects with low DIBL and sub-threshold slope than InSb and InAs. Also it is observed that for the same device geometry InSb has the highest drive current and lower intrinsic delay but its ION/IOFF figure of merit is deteriorated due to excess leakage current.

Two-dimensional properties of n-inversion layers in InSb grain boundaries under high hydrostatic pressure

International Nuclear Information System (INIS)

Kraak, W.; Herrmann, R.; Nachtwei, G.

1985-01-01

Magnetotransport properties of n-inversion layers in grain boundaries of p-InSb bicrystals are investigated under high hydrostatic pressure up to 10 3 MPa. A rapid decrease of the carrier concentration in the inversion layer is observed when hydrostatic pressure is applied. A simple model taking into account the pressure dependence of the energy band structure of pure InSb is proposed to describe this behaviour. (author)

Solid state radiation detector system

International Nuclear Information System (INIS)

1977-01-01

A solid state radiation flux detector system utilizes a detector element, consisting of a bar of semiconductor having electrical conductance of magnitude dependent upon the magnitude of photon and charged particle flux impinging thereon, and negative feedback circuitry for adjusting the current flow through a light emitting diode to facilitate the addition of optical flux, having a magnitude decreasing in proportion to any increase in the magnitude of radiation (e.g. x-ray) flux incident upon the detector element, whereby the conductance of the detector element is maintained essentially constant. The light emitting diode also illuminates a photodiode to generate a detector output having a stable, highly linear response with time and incident radiation flux changes

Damage induced in semiconductors by swift heavy ion irradiation

International Nuclear Information System (INIS)

Levalois, M.; Marie, P.

1999-01-01

The behaviour of semiconductors under swift heavy ion irradiation is different from that of metals or insulators: no spectacular effect induced by the inelastic energy loss has been reported in these materials. We present here a review of irradiation effects in the usual semiconductors (silicon, germanium and gallium arsenide). The damage is investigated by means of electrical measurements. The usual mechanisms of point defect creation can account for the experimental results. Besides, some results obtained on the wide gap semiconductor silicon carbide are reported. Concerning the irradiation effects induced by heavy ions in particle detectors, based on silicon substrate, we show that the deterioration of the detector performances can be explained from the knowledge of the substrate properties which are strongly perturbed after high doses of irradiation. Finally, some future ways of investigation are proposed. The silicon substrate is a good example to compare the irradiation effects with different particles such as electrons, neutrons and heavy ions. It is then necessary to use parameters which account for the local energy deposition, in order to describe the damage in the material

Radon concentration and exhalation measurements with semiconductor detector and electrostatic precipitator working in a closed circulation system

International Nuclear Information System (INIS)

Wojcik, M.; Morawska, L.

1982-01-01

An apparatus is described and a method presented for the determination of concentration of radon emanated from solid and liquid samples. In this method an object or a sample of air is closed in an hermetically sealed chamber. The air contaminated by radon and its daughters is circulated in a closed system a few times through an electrostatic precipitator mounted in one housing with a semiconductor Si Li detector. The concentration of radon is determined by the alpha activity measurement of its daughters. The sensitivity of the apparatus is very high. While calculating a radon concentration from an activity measurement of RaA (fast method) the sensitivity is about 0.07 pCi/l and when measuring the activity of RaC' (slow method) it is 0.008 pCi/l. Due to the application of an electrostatic precipitator and a silicon detector it is possible to perform alpha spectrometric measurements and thus separate activities of RaA, RaC', and ThC and to calculate 222 Rn or 220 Rn concentrations. The efficiency of RaA, RaB, RaC, ThB and ThC collection is constant, due to the method involving the circulation of the air through the electrostatic precipitator several times. (author)

Introduction to detectors

CERN Document Server

Walenta, Albert H

1995-01-01

Concepts for momentum measurements,particle identification and energy measurements (calorimeters) as well for imaging applications in medecine, biology and industry (non destructive testing) will be put into relation to the specific detection princip In particular the resolution for position, time, energy and intensity measurement and the efficiency will be discussed. Signal extraction,electronic signal processing and principles of information capture will close the logic circle to the input : the radiation properties.The lecture will provide some sources for data tables and small demonstration computer programs f The basic detector physics as interaction of radiation with matter, information transport via free charges,photons and phonons and the signal formation will be presented in some depth with emphasis on the influence on specific parameters for detector The lecture will cover the most popular detector principles, gas detectors (ion chambers,MPWC's and MSGC's), semiconductor detectors scintillators and ...

Process allowing the spectral compensation of semi-conductor nuclear detector

International Nuclear Information System (INIS)

L'Hote, J.P.

1987-01-01

The process includes a discriminator whose threshold level is applied to the detector during a fixed time and is externally controlled by a pre-programmed system; the different threshold levels and their application time to the detector are fixed by the nature of the used detector and by the tolerance allowed on the spectral response. The measurements made for each threshold level are corrected by a coefficient depending on the nature of the used detector and the tolerance on the spectral response [fr

Characterisation of semiconductor materials for ionising radiation detectors

International Nuclear Information System (INIS)

Vaitkus, J.; Gaubas, E.; Jasinskaite, R.; Juska, G.; Kazukauskas, V.; Puras, R.; Rahman, M.; Sakalauskas, S.; Smith, K.

2002-01-01

Methods for the detection and characterisation of semiconductor material parameters and inhomogeneities are analysed. The peculiarities of different 'classical' material and structure characterisation methods are discussed. The methods of lifetime and surface recombination mapping and electric field distribution in the samples are presented. Some results of investigations of GaAs, Si and SiC are used for the characterisation of different peculiarities or methods

Oscillatory regime of avalanche particle detectors

International Nuclear Information System (INIS)

Lukin, K.A.; Cerdeira, H.A.; Colavita, A.A.

1995-06-01

We describe the model of an avalanche high energy particle detector consisting of two pn-junctions, connected through an intrinsic semiconductor with a reverse biased voltage applied. We show that this detector is able to generate the oscillatory response on the single particle passage through the structure. The possibility of oscillations leading to chaotic behaviour is pointed out. (author). 15 refs, 7 figs

Limiting scattering processes in high-mobility InSb quantum wells grown on GaSb buffer systems

Science.gov (United States)

Lehner, Ch. A.; Tschirky, T.; Ihn, T.; Dietsche, W.; Keller, J.; Fält, S.; Wegscheider, W.

2018-05-01

We present molecular beam epitaxial grown single- and double-side δ -doped InAlSb/InSb quantum wells with varying distances down to 50 nm to the surface on GaSb metamorphic buffers. We analyze the surface morphology as well as the impact of the crystalline quality on the electron transport. Comparing growth on GaSb and GaAs substrates indicates that the structural integrity of our InSb quantum wells is solely determined by the growth conditions at the GaSb/InAlSb transition and the InAlSb barrier growth. The two-dimensional electron gas samples show high mobilities of up to 349 000 cm2/Vs at cryogenic temperatures and 58 000 cm2/Vs at room temperature. With the calculated Dingle ratio and a transport lifetime model, ionized impurities predominantly remote from the quantum well are identified as the dominant source of scattering events. The analysis of the well-pronounced Shubnikov-de Haas oscillations reveals a high spin-orbit coupling with an effective g -factor of -38.4 in our samples. Along with the smooth surfaces and long mean free paths demonstrated, our InSb quantum wells are increasingly competitive for nanoscale implementations of Majorana mode devices.

Vacuum-Ultraviolet Photovoltaic Detector.

Science.gov (United States)

Zheng, Wei; Lin, Richeng; Ran, Junxue; Zhang, Zhaojun; Ji, Xu; Huang, Feng

2018-01-23

Over the past two decades, solar- and astrophysicists and material scientists have been researching and developing new-generation semiconductor-based vacuum ultraviolet (VUV) detectors with low power consumption and small size for replacing traditional heavy and high-energy-consuming microchannel-detection systems, to study the formation and evolution of stars. However, the most desirable semiconductor-based VUV photovoltaic detector capable of achieving zero power consumption has not yet been achieved. With high-crystallinity multistep epitaxial grown AlN as a VUV-absorbing layer for photogenerated carriers and p-type graphene (with unexpected VUV transmittance >96%) as a transparent electrode to collect excited holes, we constructed a heterojunction device with photovoltaic detection for VUV light. The device exhibits an encouraging VUV photoresponse, high external quantum efficiency (EQE) and extremely fast tempera response (80 ns, 10 4 -10 6 times faster than that of the currently reported VUV photoconductive devices). This work has provided an idea for developing zero power consumption and integrated VUV photovoltaic detectors with ultrafast and high-sensitivity VUV detection capability, which not only allows future spacecraft to operate with longer service time and lower launching cost but also ensures an ultrafast evolution of interstellar objects.

Effect of temperature on terahertz photonic and omnidirectional band gaps in one-dimensional quasi-periodic photonic crystals composed of semiconductor InSb.

Science.gov (United States)

Singh, Bipin K; Pandey, Praveen C

2016-07-20

Engineering of thermally tunable terahertz photonic and omnidirectional bandgaps has been demonstrated theoretically in one-dimensional quasi-periodic photonic crystals (PCs) containing semiconductor and dielectric materials. The considered quasi-periodic structures are taken in the form of Fibonacci, Thue-Morse, and double periodic sequences. We have shown that the photonic and omnidirectional bandgaps in the quasi-periodic structures with semiconductor constituents are strongly depend on the temperature, thickness of the constituted semiconductor and dielectric material layers, and generations of the quasi-periodic sequences. It has been found that the number of photonic bandgaps increases with layer thickness and generation of the quasi-periodic sequences. Omnidirectional bandgaps in the structures have also been obtained. Results show that the bandwidths of photonic and omnidirectional bandgaps are tunable by changing the temperature and lattice parameters of the structures. The generation of quasi-periodic sequences can also change the properties of photonic and omnidirectional bandgaps remarkably. The frequency range of the photonic and omnidirectional bandgaps can be tuned by the change of temperature and layer thickness of the considered quasi-periodic structures. This work will be useful to design tunable terahertz PC devices.

Neutron spectrometry by diamond detector for nuclear radiation

International Nuclear Information System (INIS)

Kozlov, S.F.; Konorova, E.A.; Barinov, A.L.; Jarkov, V.P.

1975-01-01

Experiments on fast neutron spectrometry using the nuclear radiation diamond detector inside a horizontal channel of a water-cooled and water-moderated reactor are described. It is shown that the diamond detector enables neutron spectra to be measured within the energy range of 0.3 to 10 MeV against reactor gamma-radiation background and has radiation resistance higher than that of conventional semiconductor detectors. (U.S.)

Polycrystalline diamond film UV detectors for excimer lasers

International Nuclear Information System (INIS)

Ralchenko, V G; Savel'ev, A V; Konov, Vitalii I; Mazzeo, G; Spaziani, F; Conte, G; Polyakov, V I

2006-01-01

Photoresistive metal-semiconductor-metal detectors based on polycrystalline diamond films are fabricated for recording cw and pulsed UV radiation. The detectors have a high spectral selectivity (the UV-to-VIS response ratio is ∼10 5 ) and a temporal resolution of the order of 10 9 s. 'Solar-blind' photostable diamond detectors are promising for applications in UV lithography, laser micromachining, medicine, and space research. (letters)

Dislocation-limited electron transport in InSb grown on GaAs(0 0 1)

Energy Technology Data Exchange (ETDEWEB)

Sato, T. [Center for Nano Materials and Technology, Japan Advanced Institute of Science and Technology, 1-1 Asahidai, Nomi, Ishikawa 923-1292 (Japan)]. E-mail: taku-s@jaist.ac.jp; Suzuki, T. [Center for Nano Materials and Technology, Japan Advanced Institute of Science and Technology, 1-1 Asahidai, Nomi, Ishikawa 923-1292 (Japan); Tomiya, S. [Materials Analysis Laboratory, Sony Corporation, 4-16-1 Okata, Atugi, Kanagawa 243-0021 (Japan); Yamada, S. [Center for Nano Materials and Technology, Japan Advanced Institute of Science and Technology, 1-1 Asahidai, Nomi, Ishikawa 923-1292 (Japan)

2006-04-01

We investigated dislocations and electrical properties in InSb thin films with various thickness grown on GaAs(0 0 1). It is found that both the threading dislocation density and the local donor concentration decrease in proportion to the inverse of the distance from the InSb/GaAs interface, which indicates that the former is the origin of the latter. This behavior is well explained by pair annihilation mechanism of the threading dislocations. The electron mobility is limited by ionized donor scattering, i.e. charged dislocation scattering.

Study of semiconductor detectors applied to diagnostic X-ray

International Nuclear Information System (INIS)

Salgado, Cesar Marques

2003-08-01

This work aims an evaluation of procedures for photons spectrum determination, produced by a X ray tube, normally used for medical diagnoses which operation voltage ranges from 20 to 150 kVp, to allow more precise characterization of the photon beam. The use of spectrum analysis will contribute to reduce the uncertainty in the ionization camera calibrations. For this purpose, two kind of detectors were selected, a Cadmium Zinc Telluride (CZT) and a planar HPGe detector. The X ray interaction with the detector's crystal produces, by electronic processes, a pulse high distribution as an output, which is no the true photon spectrum, due to the presence of K shell escape peaks, Compton scattering and to the fact that the detectors efficiency diminish rapidly with the increase of the photon energy. A detailed analysis of the contributing factors to distortions in the spectrum is necessary and was performed by Monte Carlo calculation with the MCNP 4B computer code. In order to determine the actual photon spectrum for a X ray tube a spectra stripping procedure is described for the HPGe detector. The detector's response curves, determined by the Monte Carlo calculation, were compared to the experimental ones, for isotropic point sources. For the methodology validation, stripped spectra were compared to the theoretical ones, for the same X ray tube's settings, for a qualitative evaluation. The air kerma rate calculated with the photon spectra were compared to the direct measurement using an ionization chamber, for a quantitative evaluation. (author)

Evaluation of XRI-UNO CdTe detector for nuclear medical imaging

International Nuclear Information System (INIS)

Jambi, L.K.; Lees, J.E.; Bugby, S.L.; Alqahtani, M.S.; Tipper, S.; Perkins, A.C.

2015-01-01

Over the last two decades advances in semiconductor detector technology have reached the point where they are sufficiently sensitive to become an alternative to scintillators for high energy gamma ray detection for application in fields such as medical imaging. This paper assessed the Cadmium-Telluride (CdTe) XRI-UNO semiconductor detector produced by X-RAY Imatek for photon energies of interest in nuclear imaging. The XRI-UNO detector was found to have an intrinsic spatial resolution of <0.5mm and a high incident count rate capability up to at least 1680cps. The system spatial resolution, uniformity and sensitivity characteristics are also reported

P-N semiconductor junctions used as X-ray detectors

International Nuclear Information System (INIS)

Pela, C.A.; Bruco, J.L.; Navas, E.A.; Paula, E. de; Guilardi Neto, T.

1987-01-01

The current response of some comercial P-N semiconductor junctions in function of X-ray incidency, in 40 to 140 KVp band used in diagnosis was characterized. Some junctions were also exposed to radiation of 80 to 250 KVp used in therapy. (C.G.C.) [pt

Radiation emitter-detector package

International Nuclear Information System (INIS)

O'Brien, J.T.; Limm, A.C.; Nyul, P.; Tassia, V.S. Jr.

1978-01-01

Mounted on the metallic base of a radiation emitter-detector is a mounting block is a first projection, and a second projection. A radiation detector is on the first projection and a semiconductor electroluminescent device, i.e., a radiation emitter, is on the second projection such that the plane of the recombination region of the electroluminescent device is perpendicular to the radiation incident surface of the radiation detector. The electroluminescent device has a primary emission and a secondary emission in a direction different from the primary emission. A radiation emitter-detector package as described is ideally suited to those applications wherein the secondary radiation of the electroluminescent device is fed into a feedback circuit regulating the biasing current of the electroluminescent device

Semiconductors for room temperature nuclear detector applications

CERN Document Server

James, Ralph B

1995-01-01

Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The""Willardson and Beer""Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series.

Spiral silicon drift detectors

International Nuclear Information System (INIS)

Rehak, P.; Gatti, E.; Longoni, A.; Sampietro, M.; Holl, P.; Lutz, G.; Kemmer, J.; Prechtel, U.; Ziemann, T.

1988-01-01

An advanced large area silicon photodiode (and x-ray detector), called Spiral Drift Detector, was designed, produced and tested. The Spiral Detector belongs to the family of silicon drift detectors and is an improvement of the well known Cylindrical Drift Detector. In both detectors, signal electrons created in silicon by fast charged particles or photons are drifting toward a practically point-like collection anode. The capacitance of the anode is therefore kept at the minimum (0.1pF). The concentric rings of the cylindrical detector are replaced by a continuous spiral in the new detector. The spiral geometry detector design leads to a decrease of the detector leakage current. In the spiral detector all electrons generated at the silicon-silicon oxide interface are collected on a guard sink rather than contributing to the detector leakage current. The decrease of the leakage current reduces the parallel noise of the detector. This decrease of the leakage current and the very small capacities of the detector anode with a capacitively matched preamplifier may improve the energy resolution of Spiral Drift Detectors operating at room temperature down to about 50 electrons rms. This resolution is in the range attainable at present only by cooled semiconductor detectors. 5 refs., 10 figs

Pixellated thallium bromide detectors for gamma-ray spectroscopy and imaging

Energy Technology Data Exchange (ETDEWEB)

Onodera, T. E-mail: tosiyuki@smail.tohtech.ac.jp; Hitomi, K.; Shoji, T.; Hiratate, Y

2004-06-01

Recently, pixellated semiconductor detectors exhibit high-energy resolution, which have been studied actively and fabricated from CdTe, CZT and HgI{sub 2}. Thallium bromide (TlBr) is a compound semiconductor characterized with its high atomic numbers (Tl=81, Br=35) and high density (7.56 g/cm{sup 3}). Thus, TlBr exhibits higher photon stopping power than other semiconductor materials used for radiation detector fabrication such as CdTe, CZT and HgI{sub 2}. The wide band gap of TlBr (2.68 eV) permits the detectors low-noise operation at around room temperature. Our studies made an effort to fabricate pixellated TlBr detectors had sufficient detection efficiency and good charge collection efficiency. In this study, pixellated TlBr detectors were fabricated from the crystals purified by the multipass zone-refining method and grown by the horizontal traveling molten zone (TMZ) method. The TlBr detector has a continuous cathode over one crystal surface and 3x3 pixellated anodes (0.57x0.57 mm{sup 2} each) surrounded by a guard ring on the opposite surface. The electrodes were realized by vacuum evaporation of palladium through a shadow mask. Typical thickness of the detector was 2 mm. Spectrometric performance of the TlBr detectors was tested by irradiating them with {sup 241}Am (59.5 keV), {sup 57}Co (122 keV) and {sup 137}Cs (662 keV) gamma-ray sources at temperature of -20 deg. C. Energy resolutions (FWHM) were measured to be 4.0, 6.0 and 9.7 keV for 59.5, 122 and 662 keV gamma-rays, respectively.

Combining two major ATLAS inner detector components

CERN Multimedia

Maximilien Brice

2006-01-01

The semiconductor tracker is inserted into the transition radiation tracker for the ATLAS experiment at the LHC. These make up two of the three major components of the inner detector. They will work together to measure the trajectories produced in the proton-proton collisions at the centre of the detector when the LHC is switched on in 2008.

The ATLAS semi-conductor tracker operation and performance

International Nuclear Information System (INIS)

Robinson, D.

2013-01-01

The Semi-Conductor Tracker (SCT) is a silicon strip detector and one of the key precision tracking devices in the Inner Detector of the ATLAS experiment at the CERN Large Hadron Collider (LHC). The SCT was installed and commissioned within ATLAS in 2007, and has been used to exploit fully the physics potential of the LHC since the first proton–proton collisions at 7 TeV were delivered in 2009. In this paper, its operational status throughout data taking up to the end of 2011 is presented, and its tracking performance is reviewed. -- Highlights: ► The operation and performance of the ATLAS Semi-Conductor Tracker (SCT) is reviewed. ► More than 99% of the SCT strips have remained operational in all data taking periods so far. ► Tracking performance indicators have met or exceeded design specifications. ► Radiation damage effects match closely expectations from delivered fluence.

Calculation of critical level value for radioactivity detection in gamma spectrometric analysis on the base of semiconductor detectors under the Chernobyl' conditions in 1986-1987

International Nuclear Information System (INIS)

Glazunov, V.O.; Rusyaev, R.V.

1989-01-01

The problem of determination of radioactivity critical level in a sample by means of gamma spectrometer with semiconductor detector is studied theoretically. The formula for critical level, which shows that it is necessary to know the background pulse counting rate in order to determine the minimum gamma photon pulse counting rates, is derived. Calculations of critical level for the Chernobyl' conditions in time period from October 1986 till July 1987 are made. 8 refs.; 7 figs.; 17 tabs

Silicon surface barrier detector and study of energy spectrum of alpha particles from radioactive source

International Nuclear Information System (INIS)

Verma, S.D.; Sinha, Vijaya

1986-01-01

The principles of working of three commonly used radiation detectors, namely ionization chambers, scintillation counters with photomultiplier tube (PMT) systems and semiconductor detectors are briefly discussed. Out of the semiconductor detectors, the silicon surface barrier (SSB) detector has distinct advantages for detection of radiations, alpha particles in particular. The experimental setup to obtain the energy spectrum of alpha particles from 241 Am source using SSB fabricated in the Physics Department of Gujarat University, Ahmedabad is described. Its performance is compared with scintillation counter using PMT. SSB detector shows a sharp peak of #approx # 3 per cent energy resolution. The factors affecting the peak, namely, electronic noise, source dependent factors and detector-dependent factors are discussed. A method of calibrating SSB detectors based on energy loss mechanism of alpha particles in thin absorbers is described. Applications of such detectors are indicated. (M.G.B.)

Hybrid organic/inorganic position-sensitive detectors based on PEDOT:PSS/n-Si

Science.gov (United States)

Javadi, Mohammad; Gholami, Mahdiyeh; Torbatiyan, Hadis; Abdi, Yaser

2018-03-01

Various configurations like p-n junctions, metal-semiconductor Schottky barriers, and metal-oxide-semiconductor structures have been widely used in position-sensitive detectors. In this report, we propose a PEDOT:PSS/n-Si heterojunction as a hybrid organic/inorganic configuration for position-sensitive detectors. The influence of the thickness of the PEDOT:PSS layer, the wavelength of incident light, and the intensity of illumination on the device performance are investigated. The hybrid PSD exhibits very high sensitivity (>100 mV/mm), excellent nonlinearity (0.995) with a response time of heterojunction are very promising for developing a new class of position-sensitive detectors based on the hybrid organic/inorganic junctions.

Alpha particle response study of polycrstalline diamond radiation detector

Energy Technology Data Exchange (ETDEWEB)

Kumar, Amit; Topkar, Anita [Electronics Division, Bhabha Atomic Research Centre, Trombay, Mumbai-400085 (India)

2016-05-23

Chemical vapor deposition has opened the possibility to grow high purity synthetic diamond at relatively low cost. This has opened up uses of diamond based detectors for wide range of applications. These detectors are most suitable for harsh environments where standard semiconductor detectors cannot work. In this paper, we present the fabrication details and performance study of polycrystalline diamond based radiation detector. Effect of different operating parameters such as bias voltage and shaping time for charge collection on the performance of detector has been studied.

Characterization of CdTe and (CdZn)Te detectors with different metal contacts

Science.gov (United States)

Pekárek, J.; Belas, E.; Grill, R.; Uxa, Å.; James, R. B.

2013-09-01

In the present work we studied an influence of different types of surface etching and surface passivation of high resistivity CdZnTe-based semiconductor detector material. The aim was to find the optimal conditions to improve the properties of metal-semiconductor contact. The main effort was to reduce the leakage current and thus get better X-ray and gamma-ray spectrum, i.e. to create a detector operating at room temperature based on this semiconductor material with sufficient energy resolution and the maximum charge collection efficiency. Individual surface treatments were characterized by I-V characteristics, spectral analysis and by determination of the profile of the internal electric field.

Superconductive tunnel structures as radiation detectors

International Nuclear Information System (INIS)

Barone, A.; Gray, K.E.

1985-08-01

A brief review is given on various aspects of the potential of superconducting tunnel junctions as detectors for atomic and nuclear radiations. On the basis of recent results main advantages and drawbacks are indicated providing a preliminary comparison with the presently used semiconductor detectors. The basic ideas underlying the physics of the interaction of nuclear particles and other radiations with superconducting junctions are outlined. 9 refs., 1 tab

Development of a stable and sensitive semiconductor detector by using a mixture of lead(II) iodide and lead monoxide for NDT radiation dose detection

Science.gov (United States)

Heo, Y. J.; Kim, K. T.; Han, M. J.; Moon, C. W.; Kim, J. E.; Park, J. K.; Park, S. K.

2018-03-01

.59% and 0.25% at 6 and 15 MV, respectively. Based on its selection in the reproducibility assessment, the 15 wt% PbO detector showed no dependence on the dose-rate changes, with R-SD semiconductors.

Kansas Advanced Semiconductor Project: Final Report

International Nuclear Information System (INIS)

Baringer, P.; Bean, A.; Bolton, T.; Horton-Smith, G.; Maravin, Y.; Ratra, B.; Stanton, N.; von Toerne, E.; Wilson, G.

2007-01-01

KASP (Kansas Advanced Semiconductor Project) completed the new Layer 0 upgrade for D0, assumed key electronics projects for the US CMS project, finished important new physics measurements with the D0 experiment at Fermilab, made substantial contributions to detector studies for the proposed e+e- international linear collider (ILC), and advanced key initiatives in non-accelerator-based neutrino physics.

Exploration of Pixelated detectors for double beta decay searches within the COBRA experiment

Energy Technology Data Exchange (ETDEWEB)

Schwenke, M., E-mail: schwenke@asp.tu-dresden.de [Institut fuer Kern- und Teilchenphysik, Technische Universitaet Dresden, Zellescher Weg 19, 01069 Dresden (Germany); Zuber, K.; Janutta, B. [Institut fuer Kern- und Teilchenphysik, Technische Universitaet Dresden, Zellescher Weg 19, 01069 Dresden (Germany); He, Z.; Zeng, F. [Department of Nuclear Engineering and Radiological Sciences, University of Michigan, Ann Arbor, Michigan 48109-2104 (United States); Anton, G.; Michel, T.; Durst, J.; Lueck, F.; Gleixner, T. [Erlangen Centre for Astroparticle Physics, Friedrich-Alexander-Universitaet Erlangen-Nuernberg, Erwin-Rommel-Str. 1, 91058 Erlangen (Germany); Goessling, C.; Schulz, O.; Koettig, T. [Technische Universitaet Dortmund, Physik E IV, 44221 Dortmund (Germany); Krawczynski, H.; Martin, J. [Department of Physics, Washington University in St. Louis, Campus Box 1105, One Brookings Drive, St. Louis, MO 63130-4899 (United States); Stekl, I.; Cermak, P. [Institute of Experimental and Applied Physics, Czech Technical University in Prague, Horska 3a/22, 128 00 Prague (Czech Republic)

2011-09-11

The aim of the COBRA experiment is the search for neutrinoless double beta decay events in Cadmium Zinc Telluride (CdZnTe) room temperature semiconductor detectors. The development of pixelated detectors provides the potential for clear event identification and thus major background reduction. The tracking option of a semiconductor is a unique approach in this field. For initial studies, several possible detector systems are considered with a special regard for low background applications: the large volume system Polaris with a pixelated CdZnTe sensor, Timepix detectors with Si and enriched CdTe sensor material and a CdZnTe pixel system developed at the Washington University in St. Louis, USA. For all detector systems first experimental background measurements taken at underground laboratories (Gran Sasso Underground Laboratory in Italy, LNGS and the Niederniveau Messlabor Felsenkeller in Dresden, Germany) and additionally for the Timepix detectors simulation results are presented.

PRISM -- A tool for modelling proton energy deposition in semiconductor materials

International Nuclear Information System (INIS)

Oldfield, M.K.; Underwood, C.I.

1996-01-01

This paper presents a description of, and test results from, a new PC based software simulation tool PRISM (Protons in Semiconductor Materials). The model describes proton energy deposition in complex 3D sensitive volumes of semiconductor materials. PRISM is suitable for simulating energy deposition in surface-barrier detectors and semiconductor memory devices, the latter being susceptible to Single-Event Upset (SEU) and Multiple-Bit Upset (MBU). The design methodology on which PRISM is based, together with the techniques used to simulate ion transport and energy deposition, are described. Preliminary test results used to analyze the PRISM model are presented

Technology of fabrication of silicon-lithium detector with superficial junction

International Nuclear Information System (INIS)

Cabal Rodriguez, A.E.; Diaz Garcia, A.; Noriega Scull, C.

1997-01-01

The Silicon nuclear radiation detectors transform the charge produced within the semiconductor crystal, product of the impinges of particles and X rays, in pulses of voltage at the output of the preamplifier. The planar Silicon-Lithium (Si(Li)) detector with superficial junction is basically a Pin structure diode. By mean of the diffusion and drift of Lithium in the Silicon a compensated or depletion region was created. There the incident radiation interacts with the Silicon, producing an electric signal proportional to the detector's energy deposited in the semiconductor. The technological process of fabrication this kind of detectors comprises several stages, some of them complex and of long duration. They also demand a systematic control. The technological process of Si(Li) detector's fabrication was carried out. The detector's fabrication electric characteristics were measured in some steps. An obtained device was mounted in the holder within a cryostat, in order to work to temperature of the liquid nitrogen. The energy resolution of the detector was measured and the value was 180 eV for the line of 5.9 KeV of an Fe-55 source. This value has allowed to work with the detector in energy disperse X-rays fluorescence. (author) [es

Pixel Detectors for Particle Physics and Imaging Applications

CERN Document Server

Wermes, N

2003-01-01

Semiconductor pixel detectors offer features for the detection of radiation which are interesting for particle physics detectors as well as for imaging e.g. in biomedical applications (radiography, autoradiography, protein crystallography) or in Xray astronomy. At the present time hybrid pixel detectors are technologically mastered to a large extent and large scale particle detectors are being built. Although the physical requirements are often quite different, imaging applications are emerging and interesting prototype results are available. Monolithic detectors, however, offer interesting features for both fields in future applications. The state of development of hybrid and monolithic pixel detectors, excluding CCDs, and their different suitability for particle detection and imaging, is reviewed.

Photoacoustic-based detector for infrared laser spectroscopy

Energy Technology Data Exchange (ETDEWEB)

Scholz, L.; Palzer, S., E-mail: stefan.palzer@imtek.uni-freiburg.de [Department of Microsystems Engineering-IMTEK, Laboratory for Gas Sensors, University of Freiburg, Georges-Köhler-Allee 102, Freiburg 79110 (Germany)

2016-07-25

In this contribution, we present an alternative detector technology for use in direct absorption spectroscopy setups. Instead of a semiconductor based detector, we use the photoacoustic effect to gauge the light intensity. To this end, the target gas species is hermetically sealed under excess pressure inside a miniature cell along with a MEMS microphone. Optical access to the cell is provided by a quartz window. The approach is particularly suitable for tunable diode laser spectroscopy in the mid-infrared range, where numerous molecules exhibit large absorption cross sections. Moreover, a frequency standard is integrated into the method since the number density and pressure inside the cell are constant. We demonstrate that the information extracted by our method is at least equivalent to that achieved using a semiconductor-based photon detector. As exemplary and highly relevant target gas, we have performed direct spectroscopy of methane at the R3-line of the 2v{sub 3} band at 6046.95 cm{sup −1} using both detector technologies in parallel. The results may be transferred to other infrared-active transitions without loss of generality.

Determination of Fano's factor in semiconductors

International Nuclear Information System (INIS)

Gomes, P.R.S.

1975-07-01

A study was made of three different semiconductor detectors: intrinsic germanium, germanium drifted with lithium, and silicon drifted with lithium. In the efficiency measurements for these detectors, special attention was paid to the escape of the germanium X-rays produced within the detector. The principal part of this work is the determination of the Fano factor for germanium and silicon. A great deal of attention was given to the analysis of experimental results. Different criteria for eliminating the linewidth contribution due to charge collection fluctuations lead to widely different values and have caused great controversy over the value of the Fano factor. Measurements were made for the three detectors using energies of 14.4 kev, 35.4 kev, 46.5 kev, 59.5 kev, 81 kev, 88 kev, 122 kev and 136.5 kev and the results indicate a Fano factor of 0.105 +- 0.004 for germanium and 0.130 +- 0.120 for silicon. (author) [pt

Identifying semiconductors by d.c. ionization conductivity

International Nuclear Information System (INIS)

Derenzo, Stephen E.; Bourret-Courchesne, Edith; James, Floyd J.; Klintenberg, Mattias K.; Porter-Chapman, Yetta; Wang, Jie; Weber, Marvin J.

2006-01-01

We describe a method for identifying semiconductor radiation detector materials based on the mobility of internally generated electrons and holes. It was designed for the early stages of exploration, when samples are not available as single crystals, but as crystalline powders. Samples are confined under pressure in an electric field and the increase in current resulting from exposure to a high-intensity source of 60Co gamma rays (i.e. the ionization current) is measured. We find that for known semiconductors the d.c. ionization current depends on voltage according to the Hecht equation, and for known insulators the d.c. ionization current is below our detection limits. This shows that the method can identify semiconductors in spite of significant carrier trapping. Using this method, we have determined that BiOI, PbIF,BiPbO2Cl, BiPbO2Br, BiPbO2I, Bi2GdO4Cl, Pb3O2I2, and Pb5O4I2 are semiconductors

Investigation of the operational quality of germanium gamma detectors. Estimation of Ge:Li detector survival rates

International Nuclear Information System (INIS)

Zerbib, J.-C.

1980-01-01

A working group has produced tables of information on gamma semiconductor Ge detectors: Ge(Li) or intrinsic Ge. The information was obtained as a result of enquirres addressed to various laboratories, and concerns 228-sources in France and Belgium [fr

Current oscillations in avalanche particle detectors with PNIPN-structure

International Nuclear Information System (INIS)

Lukin, K.A.

1995-08-01

The model of an avalanche high energy particle detector consisting of two pn-junctions, connected through an intrinsic semiconductor with a reverse biased voltage applied. This detector is able to generate the oscillatory response on the single particle passage through the structure. The possibility of oscillations leading to chaotic behaviour is pointed out

Split-Channel Ballistic Transport in an InSb Nanowire

Science.gov (United States)

Estrada Saldaña, Juan Carlos; Niquet, Yann-Michel; Cleuziou, Jean-Pierre; Lee, Eduardo J. H.; Car, Diana; Plissard, Sébastien R.; Bakkers, Erik P. A. M.; De Franceschi, Silvano

2018-04-01

We report an experimental study of one-dimensional (1D) electronic transport in an InSb semiconducting nanowire. Three bottom gates are used to locally deplete the nanowire creating a ballistic quantum point contact with only a few conducting channels. In a magnetic field, the Zeeman splitting of the corresponding 1D subbands is revealed by the emergence of conductance plateaus at multiples of $e^2$/h, yet we find a quantized conductance pattern largely dependent on the configuration of voltages applied to the bottom gates. In particular, we can make the first plateau disappear leaving a first conductance step of 2$e^2/h$, which is indicative of a remarkable two-fold subband degeneracy that can persist up to several Tesla. For certain gate voltage settings, we also observe the presence of discrete resonant states producing conductance features that can resemble those expected from the opening of a helical gap in the subband structure. We explain our experimental findings through the formation of two spatially separated 1D conduction channels.

Integration and test of the ATLAS Semiconductor Tracker

CERN Document Server

Pernegger, H

2007-01-01

The ATLAS Semiconductor Tracker (SCT) will be a central part of the tracking system of the ATLAS experiment and is one of the major new silicon detector systems for LHC. The paper summarizes the system integration of the SCT from individual components to the completed tracker barrel and endcaps ready for installation in the pit. Particular attention will be given to the test results obtained during the different integration steps: from single barrels and disks to the final tests inside the ID before installation in the pit. The tests provided us with operational experience for a significant fraction of the full detector system and showed the very good performance of the final assembled detector.

Optical response of laser-doped silicon carbide for an uncooled midwave infrared detector.

Science.gov (United States)

Lim, Geunsik; Manzur, Tariq; Kar, Aravinda

2011-06-10

An uncooled mid-wave infrared (MWIR) detector is developed by doping an n-type 4H-SiC with Ga using a laser doping technique. 4H-SiC is one of the polytypes of crystalline silicon carbide and a wide bandgap semiconductor. The dopant creates an energy level of 0.30  eV, which was confirmed by optical spectroscopy of the doped sample. This energy level corresponds to the MWIR wavelength of 4.21  μm. The detection mechanism is based on the photoexcitation of electrons by the photons of this wavelength absorbed in the semiconductor. This process modifies the electron density, which changes the refractive index, and, therefore, the reflectance of the semiconductor is also changed. The change in the reflectance, which is the optical response of the detector, can be measured remotely with a laser beam, such as a He-Ne laser. This capability of measuring the detector response remotely makes it a wireless detector. The variation of refractive index was calculated as a function of absorbed irradiance based on the reflectance data for the as-received and doped samples. A distinct change was observed for the refractive index of the doped sample, indicating that the detector is suitable for applications at the 4.21  μm wavelength.

The ATLAS Semi-Conductor Tracker Operation and Performance

CERN Document Server

Robinson, D; The ATLAS collaboration

2012-01-01

The Semi-Conductor Tracker (SCT), is a silicon strip detector and one of the key precision tracking devices in the Inner Detector of the ATLAS experiment at the CERN Large Hadron Collider (LHC). The SCT was installed and commissioned within ATLAS in 2007, and has been has been used to fully exploit the physics potential of the LHC since the first proton-proton collisions at 7 TeV were delivered in 2009. In this paper, its operational status throughout data taking up to the end of 2011 is presented, and its tracking performance is reviewed.

X-ray measurement with Pin type semiconductor detectors; Medicion de rayos X con detectores de semiconductor tipo PIN

Energy Technology Data Exchange (ETDEWEB)

Ramirez J, F.J. [Instituto Nacional de Investigaciones Nucleares, Departamento de Electronica, C.P. 52045 Salazar, Estado de Mexico (Mexico)

2000-07-01

Here are presented the experimental results of the applications of Pin type radiation detectors developed in a National Institute of Nuclear Research (ININ) project, in the measurement of low energy gamma and X-rays. The applications were oriented mainly toward the Medical Physics area. It is planned other applications which are in process of implementation inside the National Institute of Nuclear Research in Mexico. (Author)

Photovoltaic radiation detector element

International Nuclear Information System (INIS)

Agouridis, D.C.

1980-01-01

A radiation detector element is formed of a body of semiconductor material, a coating on the body which forms a photovoltaic junction therewith, and a current collector consisting of narrow metallic strips, the aforesaid coating having an opening therein in the edge of which closely approaches but is spaced from the current collector strips

Research on structure and electrical parameters of indium antimonide films

International Nuclear Information System (INIS)

Mukhametniyazova, A.; Konyaeva, V.F.; Sukhanov, S.; Ashirov, A.; Aleksanyan, S.N.

1980-01-01