Structural anisotropy of nonpolar and semipolar InN epitaxial layers

Science.gov (United States)

Darakchieva, V.; Xie, M.-Y.; Franco, N.; Giuliani, F.; Nunes, B.; Alves, E.; Hsiao, C. L.; Chen, L. C.; Yamaguchi, T.; Takagi, Y.; Kawashima, K.; Nanishi, Y.

2010-10-01

We present a detailed study of the structural characteristics of molecular beam epitaxy grown nonpolar InN films with a- and m-plane surface orientations on r-plane sapphire and (100) γ-LiAlO2, respectively, and semipolar (101¯1) InN grown on r-plane sapphire. The on-axis rocking curve (RC) widths were found to exhibit anisotropic dependence on the azimuth angle with minima at InN [0001] for the a-plane films, and maxima at InN [0001] for the m-plane and semipolar films. The different contributions to the RC broadening are analyzed and discussed. The finite size of the crystallites and extended defects are suggested to be the dominant factors determining the RC anisotropy in a-plane InN, while surface roughness and curvature could not play a major role. Furthermore, strategy to reduce the anisotropy and magnitude of the tilt and minimize defect densities in a-plane InN films is suggested. In contrast to the nonpolar films, the semipolar InN was found to contain two domains nucleating on zinc-blende InN(111)A and InN(111)B faces. These two wurtzite domains develop with different growth rates, which was suggested to be a consequence of their different polarity. Both, a- and m-plane InN films have basal stacking fault densities similar or even lower compared to nonpolar InN grown on free-standing GaN substrates, indicating good prospects of heteroepitaxy on foreign substrates for the growth of InN-based devices.

Structural anisotropy of nonpolar and semipolar InN epitaxial layers

International Nuclear Information System (INIS)

Darakchieva, V.; Xie, M.-Y.; Franco, N.; Alves, E.; Giuliani, F.; Nunes, B.; Hsiao, C. L.; Chen, L. C.; Yamaguchi, T.; Takagi, Y.; Kawashima, K.; Nanishi, Y.

2010-01-01

We present a detailed study of the structural characteristics of molecular beam epitaxy grown nonpolar InN films with a- and m-plane surface orientations on r-plane sapphire and (100) γ-LiAlO 2 , respectively, and semipolar (1011) InN grown on r-plane sapphire. The on-axis rocking curve (RC) widths were found to exhibit anisotropic dependence on the azimuth angle with minima at InN [0001] for the a-plane films, and maxima at InN [0001] for the m-plane and semipolar films. The different contributions to the RC broadening are analyzed and discussed. The finite size of the crystallites and extended defects are suggested to be the dominant factors determining the RC anisotropy in a-plane InN, while surface roughness and curvature could not play a major role. Furthermore, strategy to reduce the anisotropy and magnitude of the tilt and minimize defect densities in a-plane InN films is suggested. In contrast to the nonpolar films, the semipolar InN was found to contain two domains nucleating on zinc-blende InN(111)A and InN(111)B faces. These two wurtzite domains develop with different growth rates, which was suggested to be a consequence of their different polarity. Both, a- and m-plane InN films have basal stacking fault densities similar or even lower compared to nonpolar InN grown on free-standing GaN substrates, indicating good prospects of heteroepitaxy on foreign substrates for the growth of InN-based devices.

Career Preparation for Hotel-Motel Management and Services. Grade 11, Phase I.

Science.gov (United States)

Montgomery County Public Schools, Rockville, MD.

Suggestions arising from a curriculum development workshop led to a curriculum in hotel-motel management and services for high school students which aims to provide them with an opportunity to explore careers in the lodging and hospitality industries. Students will spend half the time in school study of three required subjects and the other half…

Superconductivity in MBE grown InN

Energy Technology Data Exchange (ETDEWEB)

Gunes, M.; Balkan, N. [School of Computer Science and Electronic Engineering, University of Essex, Wivenhoe Park, CO4 3SQ, Colchester (United Kingdom); Tiras, E.; Ardali, S. [Department of Physics, Faculty of Science, Anadolu University, Yunus Emre Campus, 26470, Eskisehir (Turkey); Ajagunna, A.O.; Iliopoulos, E.; Georgakilas, A. [Microelectronics Research Group, IESL, FORTH and Physics Department, University of Crete, P.O. Box 1385, 71110 Heraklion, Crete (Greece)

2011-05-15

We present the experimental investigation of superconductivity in unintentionally doped MBE grown InN samples with various InN film thicknesses. A significant change in resistivity was observed at 3.82 K, for an 1080 nm InN layer with carrier concentration n{sub 3D}=1.185x10{sup 19} cm{sup -3}. However, no significant resistance change was observed in the case of InN samples with carrier density of 1.024x10{sup 19} cm{sup -3}, 1.38x10{sup 19} cm{sup -3}, and thicknesses of 2070 and 4700 nm, respectively. The carrier density of all investigated samples was within the range of values between the Mott transition (2x10{sup 17} cm{sup -3}) and the superconductivity to metal transition (7x10{sup 20} cm{sup -3}). We believe that at lower temperatures ({sup 3}He) which we cannot achieve with our set-up, the phase transition in other samples is likely to be observed. The origin of the observed anisotropic type-II superconductivity is discussed (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Structural and elastic properties of InN nanowires

Energy Technology Data Exchange (ETDEWEB)

Quddus, Ehtesham B.; Wilson, Alina; Liu, Jie; Cai, Zhihua; Veereddy, Deepak; Tao, Xinyong; Li, Xiaodong; Koley, Goutam [Department of Electrical Engineering, University of South Carolina, Columbia, SC 29208 (United States); Webb, Richard A. [Department of Physics and Astronomy and USC Nanocenter, University of South Carolina, Columbia, SC 29208 (United States)

2012-04-15

Structural and elastic properties of InN nanowires (NWs) have been investigated. It was observed that the NWs bend spontaneously or upon meeting an obstacle in their growth path at angles that are multiples of 30 . Lithographically patterned trenches and barriers were found to influence the growth direction of the NWs, which depending on the angle of incidence, grew along the barrier or got deflected from it. Young's modulus of InN NWs, measured by three point bending method using a NW suspended across a trench, was found to be 266 GPa, which is in between the moduli of bulk and thin film InN. Overall, the InN NW properties were found to be very suitable for applications in nanoelectromechanical systems (NEMS) and sensors. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Formation of InN phase by sequential ion implantation

International Nuclear Information System (INIS)

Santhana Raman, P.; Ravichandran, V.; Nair, K.G.M.; Kesavamoorthy, R.; Kalavathi, S.; Panigrahi, B.K.; Dhara, S.

2006-01-01

Formation of InN phase by sequentially implanting nitrogen on indium implanted silica was demonstrated. The growth of embedded InN phase on as-implanted and post-implantation annealed sample was studied using Glancing Incidence X-Ray Diffraction (GIXRD) and Raman spectroscopy. Existence of both cubic and hexagonal phases of InN was observed. Results of irradiation induced ripening of In nanoclusters due to N + ion implantation was also studied. (author)

75 FR 12167 - Virginia Graeme Baker Pool and Spa Safety Act; Public Accommodation

Science.gov (United States)

2010-03-15

... pool or spa that is ``open exclusively to patrons of a hotel or other public accommodations facility... Web site at http://www.cpsc.gov . B. Legal Analysis In adopting a reasonable interpretation of... ``an inn, hotel, motel, or other place of lodging, except for an establishment located within a...

Improved theoretical model of InN optical properties

International Nuclear Information System (INIS)

Ferreira da Silva, A.; Chubaci, J.F.D.; Matsuoka, M.; Freitas, J.A. Jr.; Tischler, J.G.; Baldissera, G.; Persson, C.

2014-01-01

The optical properties of InN are investigated theoretically by employing the projector augmented wave (PAW) method within Green's function and the screened Coulomb interaction approximation (GW o ). The calculated results are compared to previously reported calculations which use local density approximation combined with the scissors-operator approximation. The results of the present calculation are compared with reported values of the InN bandgap and with low temperature near infrared luminescence measurements of InN films deposited by a modified Ion Beam Assisted Deposition technique. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Direct current magnetron sputtering deposition of InN thin films

International Nuclear Information System (INIS)

Cai Xingmin; Hao Yanqing; Zhang Dongping; Fan Ping

2009-01-01

In this paper, InN thin films were deposited on Si (1 0 0) and K9 glass by reactive direct current magnetron sputtering. The target was In metal with the purity of 99.999% and the gases were Ar (99.999%) and N 2 (99.999%). The properties of InN thin films were studied. Scanning electron microscopy (SEM) shows that the film surface is very rough and energy dispersive X-ray spectroscopy (EDX) shows that the film contains In, N and very little O. X-ray diffraction (XRD) and Raman scattering reveal that the film mainly contains hexagonal InN. The four-probe measurement shows that InN film is conductive. The transmission measurement demonstrates that the transmission of InN deposited on K9 glass is as low as 0.5% from 400 nm to 800 nm.

Energy conservation system for inns, hotels, and motels

Energy Technology Data Exchange (ETDEWEB)

Johnson, P.J.; Mendoza, L.; Sodaro, D.

1982-02-16

The present invention provides a system for reducing the unproductive consumption of energy by equipment primarily intended to be operated during the presence of a person or thing in the area of operation of the equipment. The system renders the equipment operable during the time a person or thing is present within the area of operation and for a short period of time immediately thereafter. Except for the short period of time immediately after the person or thing exits the area of operation, the system renders the equipment inoperable during the time the person or thing is absent from the area of operation. Maintaining the equipment operable during the short period of time after the person or thing exits the area of operation reduces deleterious recycling which would otherwise occur in the event the area of operation were reentered within the short period of time. The system comprises detecting means for providing a presencedetected signal when a person or thing is present within the area of operation and an absence-detected signal otherwise. The system also comprises delay means responsive to said detecting means for providing a delay signal for a short period of time after the detecting means starts providing the absence-detected signal. The detecting means and delay means are coupled to output means which provides an enabling signal when any of the presence-detected signal and the delay signal are present and a disabling signal otherwise.

Growth of InN films on spinel substrates by pulsed laser deposition

Energy Technology Data Exchange (ETDEWEB)

Mitamura, K. [Institute of Industrial Science (IIS), The University of Tokyo, 4-6-1 Komaba, Megruro-ku, Tokyo 153-8505 (Japan); Ohta, J.; Fujioka, H. [Institute of Industrial Science (IIS), The University of Tokyo, 4-6-1 Komaba, Megruro-ku, Tokyo 153-8505 (Japan); Kanagawa Academy of Science and Technology (KAST), 3-2-1 Sakado, Takatsu-ku, Kanagawa 213-0012 (Japan); Oshima, M. [Department of Applied Chemistry, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan)

2007-10-15

We have grown InN films on MgAl{sub 2}O{sub 4}(111) substrates with atomically flat surfaces using pulsed laser deposition (PLD) and compared their structural properties with those grown on (Mn,Zn)Fe{sub 2}O{sub 4}(111) substrates. It has been revealed that InN(0001) films grow on MgAl{sub 2}O{sub 4}(111) with an in-plane epitaxial relationship of InN[1 anti 100]//MgAl{sub 2}O{sub 4}[1 anti 10], achieving a lattice mismatch minimum. The InN films exhibited a clear sixfold rotational symmetry, without 30 rotational domains and with a full width at half maximum value of the InN 0002 rocking curve being 17.5 arcmin. Comparison between InN films grown on MgAl{sub 2}O{sub 4} and those on (Mn,Zn)Fe{sub 2}O{sub 4} led us to conclude that suppression of the interfacial reactions between the InN films and the substrate is inherently important to obtain high quality InN on substrates with a spinel structure. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

SIMS and Raman studies of Mg-doped InN

International Nuclear Information System (INIS)

Davydov, V.Yu.; Kitaev, Yu.E.; Smirnov, A.N.; Lundina, E.Y.; Klochikhin, A.A.; Smirnov, M.B.; Lu, Hai; Schaff, William J.; Lee, H.M.; Lin, H.W.; Hong, Y.L.; Gwo, S.

2008-01-01

Raman and SIMS studies of Mg-doped InN films with a Mg content from N Mg =3.3 x 10 19 to 5.5 x 10 21 cm -3 are reported. Lattice dynamics of hexagonal InN with substitutional impurities and vacancies has been investigated theoretically and calculated Raman spectra were compared with experimental ones. It is concluded that Raman spectroscopy is a good tool for quantitative characterization of Mg-doped InN. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

InN: Fermi level stabilization by low-energy ion bombardment

International Nuclear Information System (INIS)

Piper, L.F.J.; Veal, T.D.; McConville, C.F.; Lu, H.; Schaff, W.J.

2006-01-01

The near-surface electronic properties of InN have been investigated with high-resolution electron-energy loss spectroscopy. Low-energy (∝400 eV) nitrogen ion bombardment followed by low temperature annealing (<300 C) was found to dramatically increase the n-type conductivity of InN, close to the surface. This is explained in terms of the formation of amphoteric defects from the ion bombardment and annealing combined with the band structure of InN. Low-energy ion bombardment and annealing is shown to result in a damage-induced, donor-like defect-profile instead of the expected electron accumulation for InN. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Infrared reflectance measurement for InN thin film characterization

International Nuclear Information System (INIS)

Fukui, K.; Kugumiya, Y.; Nakagawa, N.; Yamamoto, A.

2006-01-01

Infrared reflectance measurements of a series of InN thin films have been performed and attempt to derive carrier concentration and other physical constants for InN thin film characterization. Fitting calculations are performed by use of the dielectric function equation based on phonon-plasmon coupling model. Longitudinal and transverse optical phonon frequencies, plasma frequency and their damping parameters can be derived from fitting. From those results, electrical and phonon properties of InN and characterization of films are discussed. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

InN Quantum Dot Based Infra-Red Photodetectors.

Science.gov (United States)

Shetty, Arjun; Kumar, Mahesh; Roull, Basanta; Vinoy, K J; Krupanidhj, S B

2016-01-01

Self-assembled InN quantum dots (QDs) were grown on Si(111) substrate using plasma assisted molecular beam epitaxy (PA-MBE). Single-crystalline wurtzite structure of InN QDs was confirmed by X-ray diffraction. The dot densities were varied by varying the indium flux. Variation of dot density was confirmed by FESEM images. Interdigitated electrodes were fabricated using standard lithog- raphy steps to form metal-semiconductor-metal (MSM) photodetector devices. The devices show strong infrared response. It was found that the samples with higher density of InN QDs showed lower dark current and higher photo current. An explanation was provided for the observations and the experimental results were validated using Silvaco Atlas device simulator.

Anomalous phase transition of InN nanowires under high pressure

International Nuclear Information System (INIS)

Tang Shun-Xi; Zhu Hong-Yang; Jiang Jun-Ru; Wu Xiao-Xin; Dong Yun-Xuan; Zhang Jian; Cui Qi-Liang; Yang Da-Peng

2015-01-01

Uniform InN nanowires were studied under pressures up to 35.5 GPa by using in situ synchrotron radiation x-ray diffraction technique at room temperature. An anomalous phase transition behavior has been discovered. Contrary to the results in the literature, which indicated that InN undergoes a fully reversible phase transition from the wurtzite structure to the rocksalt type structure, the InN nanowires in this study unusually showed a partially irreversible phase transition. The released sample contained the metastable rocksalt phase as well as the starting wurtzite one. The experimental findings of this study also reveal the potentiality of high pressure techniques to synthesize InN nanomaterials with the metastable rocksalt type structure, in addition to the generally obtained zincblende type one. (paper)

Evaluation of threading dislocation densities in In- and N-face InN

International Nuclear Information System (INIS)

Gallinat, C. S.; Koblmueller, G.; Wu, Feng; Speck, J. S.

2010-01-01

The threading dislocation (TD) structure and density has been studied in In- and N-face InN films grown on GaN by plasma-assisted molecular beam epitaxy. The TD densities were determined by nondestructive x-ray diffraction rocking curve measurements in on-axis symmetric and off-axis skew symmetric geometries and calibrated by transmission electron microscopy measurements. TD densities were dominated by edge-type TDs with screw-component TDs accounting for less than 10% of the total TD density. A significant decrease in edge-type TD density was observed for In-face InN films grown at increasingly higher substrate temperatures. In-face InN films grown with excess In exhibited lower TD densities compared to films grown under N-rich conditions. The edge-type TD density of N-face InN films was independent of substrate temperature due to the higher allowable growth temperatures for N-face InN compared to In-face InN. TD densities in In-face InN also showed a strong dependence on film thickness. Films grown at a thickness of less than 1 μm had higher TD densities compared with films grown thicker than 1 μm. The lowest measured TD density for an In-face InN film was ∼1.5x10 10 /cm 2 for 1 μm thick films.

Effects of film polarities on InN growth by molecular-beam epitaxy

International Nuclear Information System (INIS)

Xu, K.; Yoshikawa, A.

2003-01-01

Effects of the film polarity on InN growth were investigated in molecular-beam epitaxy (MBE). It was found that N-polarity InN could be grown at higher temperatures than In-polarity one. For the In-polarity films, which were grown on Ga-polar GaN template, the highest growth temperature was limited below 500 deg. C, and the surface morphology and crystal quality tended to be poor mainly because of the tolerated low growth temperature. While for the N-polarity InN films, which were grown on MBE-grown N-polar GaN, the growth temperature could be as high as 600 deg. C. The step-flow-like growth morphology was achieved for the InN films grown with N polarity at 580 deg. C. The resulting full widths of half maximum of x-ray rocking curve around InN (002) and (102) reflections were about 200-250 and 950-1100 arc sec, respectively. The photoluminescence of the InN films peaked at 0.697 eV. The recording Hall mobility of InN film grown in N polarity is 1400 cm 2 /V s with a background carrier concentration of 1.56x10 18 cm -3 at room temperature. For both-polarity films, we found N-rich condition was necessary for the stable InN growth

Generation of InN nanocrystals in organic solution through laser ablation of high pressure chemical vapor deposition-grown InN thin film

International Nuclear Information System (INIS)

Alkis, Sabri; Alevli, Mustafa; Burzhuev, Salamat; Vural, Hüseyin Avni; Okyay, Ali Kemal; Ortaç, Bülend

2012-01-01

We report the synthesis of colloidal InN nanocrystals (InN-NCs) in organic solution through nanosecond pulsed laser ablation of high pressure chemical vapor deposition-grown InN thin film on GaN/sapphire template substrate. The size, the structural, the optical, and the chemical characteristics of InN-NCs demonstrate that the colloidal InN crystalline nanostructures in ethanol are synthesized with spherical shape within 5.9–25.3, 5.45–34.8, 3.24–36 nm particle-size distributions, increasing the pulse energy value. The colloidal InN-NCs solutions present strong absorption edge tailoring from NIR region to UV region.

Convergence of valence bands for high thermoelectric performance for p-type InN

International Nuclear Information System (INIS)

Li, Hai-Zhu; Li, Ruo-Ping; Liu, Jun-Hui; Huang, Ming-Ju

2015-01-01

Band engineering to converge the bands to achieve high valley degeneracy is one of effective approaches for designing ideal thermoelectric materials. Convergence of many valleys in the valence band may lead to a high Seebeck coefficient, and induce promising thermoelectric performance of p-type InN. In the current work, we have systematically investigated the electronic structure and thermoelectric performance of wurtzite InN by using the density functional theory combined with semiclassical Boltzmann transport theory. Form the results, it can be found that intrinsic InN has a large Seebeck coefficient (254 μV/K) and the largest value of Z e T is 0.77. The transport properties of p-type InN are better than that of n-type one at the optimum carrier concentration, which mainly due to the large Seebeck coefficient for p-type InN, although the electrical conductivity of n-type InN is larger than that of p-type one. We found that the larger Seebeck coefficient for p-type InN may originate from the large valley degeneracy in the valence band. Moreover, the low minimum lattice thermal conductivity for InN is one key factor to become a good thermoelectric material. Therefore, p-type InN could be a potential material for further applications in the thermoelectric area.

El motel Vert-Bois en Chalet à Gobet, cerca de Lausana

Directory of Open Access Journals (Sweden)

Zapelli, Oswald

1964-06-01

Full Text Available This hotel is situated in a privileged position, from which there is a wonderful view of the Alps and the lake. As there is also a well-advertised service station, every incentive is provided for the tourist to make a stop at this Motel. Ample parking space, with a capacity for 80 cars, is provided on each side of the entrance. The restaurant service is the dominant feature of this project: besides a dining room for the guests, there is another one for the general public, as well as a grill room. The bar connects both dining rooms, which are located at different levels. An outdoor gallery and two terraces add to the amenities of the restaurant. The administration and reception offices occupy a separate building nearby. The bedrooms are grouped in two sets, each comprising three buildings, and are arranged unevenly as regards elevation and plan design. They are situated sufficiently far from the main road to provide guests with silence at night. Each apartment has one or two beds and is very comfortably appointed. In one of the groups advantage of the ground slope has been taken, so that the car can be parked beneath the apartment. Sports facilities have been provided to make a stay at this motel even more rewarding: there is a large and two small swimming pools, tennis courts, a horse riding school, and a golf course not far off. In winter, time skiing enthusiasts also take advantage of this fine motel. Altogether it is a most attractive feature for the traveller, who is delighted with the way the buildings harmonise with the local scenery.La situación privilegiada de este complejo hotelero en una zona desde la que se domina una bella vista panorámica de los Alpes y del lago, atrae la atención del turista; y una estación de servicio, con señalización «ad-hoc», invita al conductor a parar. A ambos lados de la entrada se le ofrecen dos grandes aparcamientos con capacidad para 80 coches. El edificio del restaurante constituye el elemento

Two-dimensional electron gas in monolayer InN quantum wells

International Nuclear Information System (INIS)

Pan, W.; Wang, G. T.; Dimakis, E.; Moustakas, T. D.; Tsui, D. C.

2014-01-01

We report in this letter experimental results that confirm the two-dimensional nature of the electron systems in a superlattice structure of 40 InN quantum wells consisting of one monolayer of InN embedded between 10 nm GaN barriers. The electron density and mobility of the two-dimensional electron system (2DES) in these InN quantum wells are 5 × 10 15  cm −2 (or 1.25 × 10 14  cm −2 per InN quantum well, assuming all the quantum wells are connected by diffused indium contacts) and 420 cm 2 /Vs, respectively. Moreover, the diagonal resistance of the 2DES shows virtually no temperature dependence in a wide temperature range, indicating the topological nature of the 2DES

Anomalous magnetism of superconducting Mg-doped InN film

Directory of Open Access Journals (Sweden)

P. H. Chang

2016-02-01

Full Text Available We report on the Meissner effect of Mg-doped InN film with superconducting transition onset temperature Tc,onset of 5 K. Mg-doped InN is magnetically ordered and exhibits a simultaneous first-order magnetic and electric transition near 50 K. Its behavior is similar to that of iron-based superconductors. A strong correlation is proposed to exist between structural distortion and superconductivity when Mg is doped into InN. The suppression of magnetic ordering close to Tc by doping is further demonstrated by anisotropic magnetoresistance and M-H measurements. The findings suggest that the superconducting mechanism in the system may not be conventional BCS.

Influence of Different Interlayers on Growth Mode and Properties of InN by MOVPE

International Nuclear Information System (INIS)

Ri-Qing, Zhang; Xiang-Lin, Liu; Ting-Ting, Kang; Wei-Guo, Hu; Shao-Yan, Yang; Chun-Mei, Jiao; Qing-Sheng, Zhu

2008-01-01

We grow InN epilayers on different interlayers by metal organic vapour phase epitaxy (MOVPE) method, and investigate the effect of interlayer on the properties and growth mode of InN films. Three InN samples were deposited on nitrided sapphire, low-temperature InN (LT-InN) and high-temperature GaN (HT-GaN), respectively. The InN layer grown directly on nitrided sapphire owns the narrowest x-ray diffraction rocking curve (XRC) width of 300 arcsec among the three samples, and demonstrates a two-dimensional (2D) step-flow-like lateral growth mode, which is much different from the three-dimensional (3D) pillar-like growth mode of LT-InN and HT-GaN buffered samples. It seems that mismatch tensile strain is helpful for the lateral epitaxy of InN film, whereas compressive strain promotes the vertical growth of InN films

Molecular beam epitaxy of InN nanowires on Si

Science.gov (United States)

Golam Sarwar, A. T. M.; Carnevale, Santino D.; Kent, Thomas F.; Laskar, Masihhur R.; May, Brelon J.; Myers, Roberto C.

2015-10-01

We report on a systematic growth study of the nucleation process of InN nanowires on Si(1 1 1) substrates using plasma assisted molecular beam epitaxy (PAMBE). Samples are grown with various substrate temperatures and III/V ratios. Scanning electron microscopy, X-ray diffraction spectroscopy, energy dispersive X-ray spectroscopy, and photoluminescence are carried out to map out the variation in structural and optical properties versus growth conditions. Statistical averages of areal density, height, and radius are mapped as a function of substrate temperature and III/V ratio. Three different morphological phases are identified on the growth surface: InN, α-In and β-In. Based on SEM image analysis of samples grown at different conditions, the formation mechanism of these phases is proposed. Finally, the growth phase diagram of PAMBE grown InN on Si under N-rich condition is presented, and tapered versus non-tapered growth conditions are identified. It is found that high growth temperature and low III/V ratio plays a critical role in the growth of non-tapered InN nanowires.

Growth of cubic InN on r-plane sapphire

International Nuclear Information System (INIS)

Cimalla, V.; Pezoldt, J.; Ecke, G.; Kosiba, R.; Ambacher, O.; Spiess, L.; Teichert, G.; Lu, H.; Schaff, W.J.

2003-01-01

InN has been grown directly on r-plane sapphire substrates by plasma-enhanced molecular-beam epitaxy. X-ray diffraction investigations have shown that the InN layers consist of a predominant zinc blende (cubic) structure along with a fraction of the wurtzite (hexagonal) phase which content increases with proceeding growth. The lattice constant for zinc blende InN was found to be a=4.986 A. For this unusual growth of a metastable cubic phase on a noncubic substrate an epitaxial relationship was proposed where the metastable zinc blende phase grows directly on the r-plane sapphire while the wurtzite phase arises as the special case of twinning in the cubic structure

InN{0001} polarity by ion scattering spectroscopy

International Nuclear Information System (INIS)

Walker, M.; Veal, T.D.; McConville, C.F.; Lu, Hai; Schaff, W.J.

2005-01-01

The polarity of a wurtzite InN thin film grown on a c-plane sapphire substrate with GaN and AlN buffer layers has been investigated by co-axial impact collision ion scattering spectroscopy (CAICISS). Time of flight (TOF) spectra of He + ions scattered from the surface of the InN film were taken as a function of the incident angles of the primary 3 keV He + ions. From the TOF spectra, the polar angle-dependence of the In scattered intensity was obtained. Comparison of the experimental polar-angle dependence of the In CAICISS signal intensity with simulated results for the various volume ratios of (0001)- and (000 anti 1)-polarity domains indicated that the InN film is approximately 75% In-polarity and 25% N-polarity. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Analysis of the local structure of InN with a bandgap energy of 0.8 and 1.9 eV and annealed InN using X-ray absorption fine structure measurements

International Nuclear Information System (INIS)

Miyajima, Takao; Kudo, Yoshihiro; Wakahara, Akihiro; Yamaguchi, Tomohiro; Araki, Tsutomu; Nanishi, Yasushi

2006-01-01

We compared the local structure around In atoms in microwave-excited MOCVD- and MBE-grown InN film which indicates an absorption edge at 1.9 and 0.8 eV, respectively. The co-ordination numbers of the 1st-nearest neighbor N atoms and the 2nd-nearest neighbor In atoms for MBE-grown InN were n(N)=3.9±0.5 and n(In)=12.4±0.9, which are close to the ideal value of n(N)=4 and n(In)=12 for InN without defects, respectively. By thermal annealing, the structure of MBE-grown InN was changed from InN to In 2 O 3 , and the absorption edge was changed from 0.8 to 3.5 eV. However, the microwave-excited MOCVD-grown InN had no structure of In 2 O 3 , and had the reduced co-ordination numbers of the 2nd-nearest neighbor In atoms of n(In)=10.6-11.7. From these results, we conclude that the origin of the 1.9-eV absorption edge of InN is the imperfections (defects) of the In lattice sites of InN, rather than the generation of In 2 O 3 , which has a bandgap energy of 3.5 eV. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Transport and mobility properties of wurtzite InN and GaN

International Nuclear Information System (INIS)

Yarar, Zeki

2007-01-01

The results of an ensemble Monte Carlo model of the electron transport in wurtzite gallium nitride (GaN) and indium nitride (InN) are presented. There is a controversy over the material parameters of InN, therefore the recently reported and the traditionally accepted parameter values for InN are used in simulations and the results are compared. The steady-state and transient electron transport characteristics are analyzed and the valley populations of electrons are determined as a function of electric field. The low-field mobility of electrons is also obtained as a function of temperature and over a wide range of carrier concentrations. It is seen that with the recently published material parameters the peak velocity of carriers in InN increases significantly, while the field at which it is attained decreases. The calculated maximum low field mobility at 300 K in InN with the recent material parameters is about 10000 cm 2 /V s for low carrier concentrations. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Growth of M-plane (10-10)InN on LiAlO2(100) substrate

International Nuclear Information System (INIS)

Takagi, Yusuke; Muto, Daisuke; Araki, Tsutomu; Nanishi, Yasushi; Yamaguchi, Tomohiro

2009-01-01

In this study, we report the growth and characterization of M-plane InN films on LiAlO 2 (100) substrates by radio-frequency plasma assisted molecular beam epitaxy (RF-MBE). InN films were grown at various temperatures and under various V/III ratios on the substrates. Pure M -plane InN films were successfully grown at a high temperature of 450 C and under a slightly In-rich condition, while the incorporation of C-plane phase was observed in M -plane InN films grown at low temperatures of less than 400 C or under a N-rich condition. These indicate that controls of growth temperature and V/III ratio are important for the growth of pure M-plane InN films. The in-plane epitaxial relationships of M -plane InN on LiAlO 2 (100) were[0001] InN //[010] LiAlO 2 and[1-210] InN //[001] LiAlO 2 . A surface electron accumulation layer on the obtained M-plane InN film is also discussed. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Dalla biopolitica all’etopolitica: Foucault e noi

Directory of Open Access Journals (Sweden)

Davide Tarizzo

2013-02-01

Full Text Available La categoria di "società della normalizzazione", proposta da Foucault, non è più in grado di descrivere il funzionamento delle società contemporanee. La logica e la matematica della normalizzazione sono state rimpiazzate dalla logica e dalla matematica dell'ottimizzazione. Questo passaggio storico segna la nascita dell'etopolitica.

Temperature dependence of InN film deposition by an RF plasma-assisted reactive ion beam sputtering deposition technique

International Nuclear Information System (INIS)

Shinoda, Hiroyuki; Mutsukura, Nobuki

2005-01-01

Indium nitride (InN) films were deposited on Si(100) substrates using a radiofrequency (RF) plasma-assisted reactive ion beam sputtering deposition technique at various substrate temperatures. The X-ray diffraction patterns of the InN films suggest that the InN films deposited at substrate temperatures up to 370 deg C were cubic crystalline InN; and at 500 deg C, the InN film was hexagonal crystalline InN. In a scanning electron microscope image of the InN film surface, facets of cubic single-crystalline InN grains were clearly observed on the InN film deposited at 370 deg C. The inclusion of metallic indium appeared on the InN film deposited at 500 deg C

Optical properties of InN nanocolumns: Electron accumulation at InN non-polar surfaces and dependence on the growth conditions

Energy Technology Data Exchange (ETDEWEB)

Segura-Ruiz, J.; Cantarero, A. [Materials Science Institute, University of Valencia (Spain); Garro, N. [Materials Science Institute, University of Valencia (Spain); Fundacio General de la Universitat de Valencia, Valencia (Spain); Iikawa, F. [Instituto de Fisica ' ' Gleb Wataghin' ' , UNICAMP, Campinas-SP (Brazil); Denker, C.; Malindretos, J.; Rizzi, A. [IV. Physikalisches Institut, Georg-August Universitaet Goettingen (Germany)

2009-06-15

InN nanocolumns grown by plasma-assisted molecular beam epitaxy have been studied by photoluminescence (PL) and photoluminescence excitation (PLE). The PL peak energy was red-shifted with respect to the PLE onset and both energies were higher than the low temperature band-gap reported for InN. PL and PLE experiments for different excitation and detection energies indicated that the PL peaks were homogeneously broadened. This overall phenomenology has been attributed to the effects of an electron accumulation layer present at the non-polar surfaces of the InN nanocolumns. Variations in the growth conditions modify the edge of the PLE spectra and the PL peak energies evidencing that the density of free electrons can be somehow controlled by the growth parameters. It was observed that In-BEP and substrate temperature leading to shorter In diffusion lengths diminished the effects of the electron accumulation layer on the optical properties. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Optical properties of InN nanocolumns: Electron accumulation at InN non-polar surfaces and dependence on the growth conditions

International Nuclear Information System (INIS)

Segura-Ruiz, J.; Cantarero, A.; Garro, N.; Iikawa, F.; Denker, C.; Malindretos, J.; Rizzi, A.

2009-01-01

InN nanocolumns grown by plasma-assisted molecular beam epitaxy have been studied by photoluminescence (PL) and photoluminescence excitation (PLE). The PL peak energy was red-shifted with respect to the PLE onset and both energies were higher than the low temperature band-gap reported for InN. PL and PLE experiments for different excitation and detection energies indicated that the PL peaks were homogeneously broadened. This overall phenomenology has been attributed to the effects of an electron accumulation layer present at the non-polar surfaces of the InN nanocolumns. Variations in the growth conditions modify the edge of the PLE spectra and the PL peak energies evidencing that the density of free electrons can be somehow controlled by the growth parameters. It was observed that In-BEP and substrate temperature leading to shorter In diffusion lengths diminished the effects of the electron accumulation layer on the optical properties. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

MBE-growth, characterization and properties of InN and InGaN

International Nuclear Information System (INIS)

Nanishi, Y.; Saito, Y.; Yamaguchi, T.; Hori, M.; Matsuda, F.; Araki, T.; Suzuki, A.; Miyajima, T.

2003-01-01

Recent developments on RF-MBE growth of InN and InGaN and their structural and property characterizations are reviewed. For successful growth of high quality InN, (1) nitridation of the sapphire substrates, (2) two-step growth, (3) precise control of V/III ratio and (4) selection of optimum growth temperature are found to be essential. Characterization using XRD, TEM, EXAFS and Raman scattering have clearly demonstrated that InN films have ideal hexagonal wurtzite structure. It is also found that the film has N-polarity. Studies on optimum growth condition dependence on substrate polarity using C and Si face SiC substrates and Ga and N face free-standing GaN substrates are also demonstrated. The result explains why high-quality InN grown by RF-MBE has N-polarity. PL and CL studies on these well-characterized high-quality InN have shown luminescence peaks at approximately 0.75 eV at 77 K. These values, however, change slightly depending on measurement temperatures and probably on the residual carrier concentrations. InGaN with full compositional range are also successfully grown on sapphire substrates and band gap energies of these alloys are also studied using PL and CL. Based on these results, true band gap energies of InN are discussed. This paper also includes latest study on single crystalline InN growth on Si (111) substrates. (copyright 2003 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

MBE-growth, characterization and properties of InN and InGaN

Energy Technology Data Exchange (ETDEWEB)

Nanishi, Y.; Saito, Y.; Yamaguchi, T.; Hori, M.; Matsuda, F.; Araki, T. [Dept. of Photonics, Ritsumeikan Univ., 1-1-1 Noji-higashi, Kusatsu (Japan); Suzuki, A. [Res. Org. of Sci. and Eng., Ritsumeikan Univ., 1-1-1 Noji-higashi, Kusatsu (Japan); Miyajima, T. [Sony Corp. Core Technology and Network Company, 4-14-1 Asahi, Atsugi, Kanagawa 243-0014 (Japan)

2003-11-01

Recent developments on RF-MBE growth of InN and InGaN and their structural and property characterizations are reviewed. For successful growth of high quality InN, (1) nitridation of the sapphire substrates, (2) two-step growth, (3) precise control of V/III ratio and (4) selection of optimum growth temperature are found to be essential. Characterization using XRD, TEM, EXAFS and Raman scattering have clearly demonstrated that InN films have ideal hexagonal wurtzite structure. It is also found that the film has N-polarity. Studies on optimum growth condition dependence on substrate polarity using C and Si face SiC substrates and Ga and N face free-standing GaN substrates are also demonstrated. The result explains why high-quality InN grown by RF-MBE has N-polarity. PL and CL studies on these well-characterized high-quality InN have shown luminescence peaks at approximately 0.75 eV at 77 K. These values, however, change slightly depending on measurement temperatures and probably on the residual carrier concentrations. InGaN with full compositional range are also successfully grown on sapphire substrates and band gap energies of these alloys are also studied using PL and CL. Based on these results, true band gap energies of InN are discussed. This paper also includes latest study on single crystalline InN growth on Si (111) substrates. (copyright 2003 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Structure and electronic properties of InN and In-rich group III-nitride alloys

International Nuclear Information System (INIS)

Walukiewicz, W; III, J W Ager; Yu, K M; Liliental-Weber, Z; Wu, J; Li, S X; Jones, R E; Denlinger, J D

2006-01-01

The experimental study of InN and In-rich InGaN by a number of structural, optical and electrical methods is reviewed. Recent advances in thin film growth have produced single crystal epitaxial layers of InN which are similar in structural quality to GaN films made under similar conditions and which can have electron concentrations below 1 x 10 18 cm -3 and mobilities exceeding 2000 cm 2 (Vs) -1 . Optical absorption, photoluminescence, photo-modulated reflectance and soft x-ray spectroscopy measurements were used to establish that the room temperature band gap of InN is 0.67 ± 0.05 eV. Experimental measurements of the electron effective mass in InN are presented and interpreted in terms of a non-parabolic conduction band caused by the k · p interaction across the narrow gap. Energetic particle irradiation is shown to be an effective method to control the electron concentration, n, in undoped InN. Optical studies of irradiated InN reveal a large Burstein-Moss shift of the absorption edge with increasing n. Fundamental studies of the energy levels of defects in InN and of electron transport are also reviewed. Finally, the current experimental evidence for p-type activity in Mg-doped InN is evaluated. (topical review)

InN grown by migration enhanced afterglow (MEAglow)

International Nuclear Information System (INIS)

Butcher, Kenneth Scott A.; Alexandrov, Dimiter; Terziyska, Penka; Georgiev, Vasil; Georgieva, Dimka; Binsted, Peter W.

2012-01-01

InN thin films were grown by a new technique, migration enhanced afterglow (MEAglow), a chemical vapour deposition (CVD) form of migration enhanced epitaxy (MEE). Here we describe the apparatus used for this form of film deposition, which includes a scalable hollow cathode nitrogen plasma source. Initial film growth results for InN are also presented including atomic force microscopy (AFM) images that indicate step flow growth with samples having root mean square (RMS) surface roughness of as little as 0.103 nm in some circumstances for film growth on sapphire substrates. X-ray diffraction (XRD) results are also provided for samples with a full width half maximum (FWHM) of the (0002) ω-2θ peak of as little as 290 arcsec. Low pressure conditions that can result in damage to the InN during growth are described. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Analysis of the local structure of InN with a bandgap energy of 0.8 and 1.9 eV and annealed InN using X-ray absorption fine structure measurements

Energy Technology Data Exchange (ETDEWEB)

Miyajima, Takao [Materials Laboratories, Sony Corporation, 4-14-1 Asahi-cho, Atsugi, Kanagawa 243-0014 (Japan); Kudo, Yoshihiro [Materials Analysis Lab., Sony Corporation, 4-18-1 Okada, Atsugi, Kanagawa 243-0021 (Japan); Wakahara, Akihiro [Deptm. of Electrical and Electronic Engineering, Toyohashi Univ. of Tech., Toyohashi 441-8580 (Japan); Yamaguchi, Tomohiro; Araki, Tsutomu; Nanishi, Yasushi [Deptm. of Photonics, Ritsumeikan Univ., 1-1-1 Nojihigashi, Kusatsu, Shiga 525-8577 (Japan)

2006-06-15

We compared the local structure around In atoms in microwave-excited MOCVD- and MBE-grown InN film which indicates an absorption edge at 1.9 and 0.8 eV, respectively. The co-ordination numbers of the 1st-nearest neighbor N atoms and the 2nd-nearest neighbor In atoms for MBE-grown InN were n(N)=3.9{+-}0.5 and n(In)=12.4{+-}0.9, which are close to the ideal value of n(N)=4 and n(In)=12 for InN without defects, respectively. By thermal annealing, the structure of MBE-grown InN was changed from InN to In{sub 2}O{sub 3}, and the absorption edge was changed from 0.8 to 3.5 eV. However, the microwave-excited MOCVD-grown InN had no structure of In{sub 2}O{sub 3}, and had the reduced co-ordination numbers of the 2nd-nearest neighbor In atoms of n(In)=10.6-11.7. From these results, we conclude that the origin of the 1.9-eV absorption edge of InN is the imperfections (defects) of the In lattice sites of InN, rather than the generation of In{sub 2}O{sub 3}, which has a bandgap energy of 3.5 eV. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

78 FR 15714 - Welch Motel, Inc., Welch Oil, Inc., Boondocks USA Truck Stop, Bob Welch v. Midland Power...

Science.gov (United States)

2013-03-12

..., Inc., Welch Oil, Inc., Boondocks USA Truck Stop, Bob Welch v. Midland Power Cooperative, Corn Belt..., Welch Motel, Inc., Welch Oil, Inc., Boondocks USA Truck Stop, and Bob Welch (collectively, Complainants... into a contract to consume all of the electric energy and capacity generated by [[Page 15715...

Training plan : Dallas Integrated Corridor Management (ICM) demonstration project.

Science.gov (United States)

2013-01-01

The Dallas Area Rapid Transit (DART) is leading the US 75 Integrated Corridor Management (ICM) Demonstration Project for the Dallas region. Coordinated corridor operations and management is predicated on being able to share transportation information...

Test report : Dallas Integrated Corridor Management (ICM) demonstration project.

Science.gov (United States)

2015-05-01

The Dallas Area Rapid Transit (DART) is leading the US 75 Integrated Corridor Management (ICM) : Demonstration Project for the Dallas region. Coordinated corridor operations and management is : predicated on being able to share transportation informa...

Final report : Dallas Integrated Corridor Management (ICM) Demonstration Project.

Science.gov (United States)

2015-08-01

The Dallas Area Rapid Transit (DART) is leading the US-75 Integrated Corridor Management (ICM) Demonstration Project for the Dallas region. Coordinated corridor operations and management is predicated on being able to share transportation information...

MOVPE of InN films on GaN templates grown on sapphire and silicon(111) substrates

International Nuclear Information System (INIS)

Jamil, Muhammad; Arif, Ronald A.; Ee, Yik-Khoon; Tong, Hua; Tansu, Nelson; Higgins, John B.

2008-01-01

This paper reports the study of MOVPE of InN on GaN templates grown on sapphire and silicon(111) substrates. Thermodynamic analysis of MOVPE of InN performed using NH 3 as nitrogen source and the experimental findings support the droplet-free epitaxial growth of InN under high V/III ratios of input precursors. At a growth pressure of 500 Torr, the optimum growth temperature and V/III ratio of the InN film are 575-650 C and >3 x 10 5 , respectively. The surface RMS roughness of InN film grown GaN/sapphire template is ∝0.3 nm on 2 μm x 2 μm area, while the RMS roughness of the InN film grown on GaN/Si(111) templates is found as ∝0.7 nm. The X-ray diffraction (XRD) measurement reveals the (0002) texture of the InN film on GaN/sapphire template with a FWHM of 281 arcsec of the InN(0002) ω rocking curve. For the film grown on GaN/Si template under identical growth conditions, the XRD measurements show the presence of metallic In, in addition to the (0002) orientation of InN layer. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Reductions without Regret: Avoiding Wrong Turns, Roach Motels, and Box Canyons

Energy Technology Data Exchange (ETDEWEB)

Swegle, John A. [Savannah River Site (SRS), Aiken, SC (United States). Savannah River National Lab. (SRNL); Tincher, Douglas J. [Savannah River Site (SRS), Aiken, SC (United States). Savannah River National Lab. (SRNL)

2013-09-11

This is the third of three papers (in addition to an introductory summary) aimed at providing a framework for evaluating future reductions or modifications of the U.S. nuclear force, first by considering previous instances in which nuclear-force capabilities were eliminated; second by looking forward into at least the foreseeable future at the features of global and regional deterrence (recognizing that new weapon systems currently projected will have expected lifetimes stretching beyond our ability to predict the future); and third by providing examples of past or possible undesirable outcomes in the shaping of the future nuclear force, as well as some closing thoughts for the future. In this paper, we provide one example each of our judgments on what constitutes a box canyon, a roach motel, and a wrong turn: Wrong Turn: The Reliable Replacement Warhead: Roach Motel: SRAM T vs the B61: and A Possible Box Canyon: A Low-Yield Version of the W76 SLBM Warhead. Recognizing that new nuclear missions or weapons are not demanded by current circumstances ₋ a development path that yields future capabilities similar to those of today, which are adequate if not always ideal, and a broader national-security strategy that supports nonproliferation and arms control by reducing the role for, and numbers, of nuclear weapons ₋ we briefly consider alternate, less desirable futures, and their possible effect on the complex problem of regional deterrence. In this regard, we discuss the issues posed by, and possible responses to, three example regional deterrence challenges: in-country defensive use of nuclear weapons by an adversary; reassurance of U.S. allies with limited strategic depth threatened by an emergent nuclear power; and extraterritorial, non-strategic offensive use of nuclear weapons by an adversary in support of limited military objectives against a U.S. ally.

Polarity and microstructure in InN thin layers grown by MOVPE

International Nuclear Information System (INIS)

Kuwano, N.; Nakahara, Y.; Amano, H.

2006-01-01

Microstructures in InN grown on sapphire (0001) and yttria-stabilized zirconia (YSZ) (111) by metal-organic vapor phase epitaxy (MOVPE) were analyzed by means of transmission electron microscopy (TEM) in order to clarify the growth process. Special attention was paid to the selectivity of the crystal polarity of InN. The InN thin films grown on sapphire after nitridation has a flat surface while those grown on YSZ has hillocks on the surface. The crystal polarity was determined by comparing the experimentally observed intensity distribution in convergent beam electron diffraction (CBED) disks with those simulated by the Broch-wave method. It was found that the InN grown on the sapphire has a nitrogen-polarity and the one on YSZ has a mixture of In- and N-polarities. The effect of surface-nitridation of sapphire on the growth process is also discussed (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Electron transport in wurtzite InN

Indian Academy of Sciences (India)

InN transport; mobility; energy and momentum relaxation; impurity scattering. ... future generation solar cell because the nitride alloys can cover the whole ... We apply the ensemble Monte Carlo method to investigate the electron transport in.

Tropes of a Texan trauma: monumental Dallas after John F. Kennedy

NARCIS (Netherlands)

Ronnes, H.; Meijer van Putten, A.

2010-01-01

Dealey Plaza in central Dallas serves both as a 'cradle' and a 'grave'; at this historic site Dallas was born and an American president died. The assassination of President Kennedy on 22 November 1963 changed Dealey Plaza, the site where the first citizen of Dallas settled in 1841, from a symbol of

Catalyst-free growth of InN nanorods by metal-organic chemical vapor deposition

International Nuclear Information System (INIS)

Kim, Min Hwa; Moon, Dae Young; Park, Jinsub; Nanishi, Yasushi; Yi, Gyu-Chul; Yoon, Euijoon

2012-01-01

We demonstrated the growth of catalyst-free InN nanostructures including nanorods on (0001) Al 2 O 3 substrates using metal-organic chemical vapor deposition. As the growth time increased, growth rate along c-direction increased superlinearly with decreasing c-plane area fractions and increasing side wall areas. It was also found that desorption from the sidewalls of InN nanostructures during the InN nanorods formation was one of essential key parameters of the growth mechanism. We propose a growth model to explain the InN nanostructure evolution by considering the side wall desorption and re-deposition of indium at top c-plane surfaces. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Unusual photoluminescence properties of vertically aligned InN nanorods grown by plasma-assisted molecular-beam epitaxy

International Nuclear Information System (INIS)

Shen, C.H.; Chen, H.Y.; Lin, H.W.; Wu, C.Y.; Gwo, S.; Klochikhin, A.A.; Davydov, V.Yu.

2007-01-01

We report the unusual photoluminescence (PL) properties of vertically aligned InN nanorod arrays grown on Si(111) with a Si 3 N 4 buffer layer. The optimum growth conditions of InN nanorods are obtained by controlling the III/V ratio and the growth temperature. Structural characterization by X-ray diffraction and scanning electron microscopy indicates that individual nanorods are wurtzite InN single crystals with the growth direction along the c-axis. Near-infrared PL from InN nanorods is clearly observed at room temperature. However, in comparison to the PL from InN epitaxial films, the PL from InN nanorods is significantly lower in efficiency and exhibit anomalous temperature dependence. We propose that these unusual PL properties are results of considerable structural disorder (especially for the low-temperature grown InN nanorods) and strong surface electron accumulation effect. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Effects of Cp2Mg supply on MOVPE growth behavior of InN

International Nuclear Information System (INIS)

Sugita, K.; Sasamoto, K.; Hashimoto, A.; Yamamoto, A.

2011-01-01

This report shows the effect of Cp 2 Mg supply on MOVPE growth behavior of InN. At low growth temperature (∝600 C), the formation of adducts occurred, which degenerates the crystal quality. With increasing the growth temperature, the adduct formation was suppressed because the decomposition of Cp 2 Mg was enhanced and thus the incorporation of carbon into the film was suppressed. The use of Cp 2 Mg during InN growth increases the growth rate in the lateral direction. Non-doped InN film grown on GaN buffer has an In-face of the top side. On the other hand, the inversion domains seems to be formed in the highly Mg-doped InN. Tilt distribution decreases from 65 to 30 arcmin with the increase of Cp 2 Mg/TMI molar ratio 0 to 0.06. The donor is produced in highly Mg-doped MOVPE-grown InN (Cp 2 Mg/TMI molar ratio > 0.005). Therefore, the effect of Cp 2 Mg supply on MOVPE growth behavior of InN is found to improve a macro-scale crystal quality but also produces the donor (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Investigations on the structural and optical properties of sphere-shaped indium nitride (InN)

Energy Technology Data Exchange (ETDEWEB)

Bagavath, C.; Kumar, J. [Anna University, Crystal Growth Centre, Chennai, Tamil Nadu (India); Nasi, L. [IMEM-CNR, Parma (Italy)

2017-04-15

Indium nitride (InN) sphere-shaped micro crystals and nano crystals were made using sol-gel method. The crystalline size of the samples were calculated using X-ray diffraction, which were found to increase with the increase of nitridation temperature and time. High resolution-transmission electron microscopy images exhibited the distinct sphere shape of InN with different size of micro and nanometers. The calculated band gap of InN spheres using photo luminescence and UV-visible absorption spectra, was found to be 1.2 eV. Optical phonon modes of InN were determined from micro-Raman studies. (orig.)

Double resonance Raman effects in InN nanowires

Energy Technology Data Exchange (ETDEWEB)

Domenech-Amador, N.; Cusco, R.; Artus, L. [Institut Jaume Almera, Consell Superior d' Investigacions Cientifiques (CSIC), Lluis Sole i Sabaris s.n., Barcelona, Catalonia (Spain); Calarco, R. [Institute of Bio- and Nanosystems, Research Center Juelich GmbH, Juelich (Germany); Paul-Drude-Institut fuer Festkoerperelektronik, Berlin (Germany); Yamaguchi, T.; Nanishi, Y. [Faculty of Science and Engineering, Ritsumeikan University, Noji-Higashi, Kusatsu, Shiga 525-8577 (Japan)

2012-04-15

We study the excitation wavelength dependence of the Raman spectra of InN nanowires. The E{sub 1}(LO) phonon mode, which is detected in backscattering configuration because of light entering through lateral faces, exhibits an upward frequency shift that can be explained by Martin's double resonance. The E{sub 1} (LO)/E{sub 2}{sup h} intensity ratio increases with the excitation wavelength more rapidly than the A{sub 1}(LO)/E{sub 2}{sup h} ratio measured in InN thin films. (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Growth modes of InN (000-1) on GaN buffer layers on sapphire

International Nuclear Information System (INIS)

Liu Bing; Kitajima, Takeshi; Chen Dongxue; Leone, Stephen R.

2005-01-01

In this work, using atomic force microscopy and scanning tunneling microscopy, we study the surface morphologies of epitaxial InN films grown by plasma-assisted molecular beam epitaxy with intervening GaN buffer layers on sapphire substrates. On smooth GaN buffer layers, nucleation and evolution of three-dimensional InN islands at various coverages and growth temperatures are investigated. The shapes of the InN islands are observed to be predominantly mesalike with large flat (000-1) tops, which suggests a possible role of indium as a surfactant. Rough GaN buffer layers composed of dense small GaN islands are found to significantly improve uniform InN wetting of the substrates, on which atomically smooth InN films are obtained that show the characteristics of step-flow growth. Scanning tunneling microscopy imaging reveals the defect-mediated surface morphology of smooth InN films, including surface terminations of screw dislocations and a high density of shallow surface pits with depths less than 0.3 nm. The mechanisms of the three-dimensional island size and shape evolution and formation of defects on smooth surfaces are considered

Crystallographic deterioration of MOVPE InN during the growth

International Nuclear Information System (INIS)

Sugita, K.; Nagai, Y.; Houchin, Y.; Hashimoto, A.; Yamamoto, A.

2007-01-01

This paper reports the crystallographic degradation of MOVPE InN during the growth. Using FWHMs of X-ray rocking curve, tilt ((0002)) and twist ((10-10)) angle distributions are evaluated and effects of the major growth parameters, such as growth temperature, growth time and with/without GaN buffer in the degradation, are revealed. With increasing either thickness of grown InN or growth temperature up to 600 C, the tilt angle distribution is markedly increased, indicating the crystallographic degradation of grown films. The use of a GaN buffer reduces such degradation. Since the twist angle distribution is scarcely changed by such growth parameters, the destruction of InN crystals during growth and annealing is concluded to be anisotropic. The trends of the crystallographic degradation revealed here are in good agreement with those for the electrical and optical degradation previously reported. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Spectral dependence of third-order nonlinear optical properties in InN

International Nuclear Information System (INIS)

Ahn, H.; Lee, M.-T.; Chang, Y.-M.

2014-01-01

We report on the nonlinear optical properties of InN measured in a wide near-infrared spectral range with the femtosecond Z-scan technique. The above-bandgap nonlinear absorption in InN is found to originate from the saturation of absorption by the band-state-filling and its cross-section increases drastically near the bandgap energy. With below-bandgap excitation, the nonlinear absorption undergoes a transition from saturation absorption (SA) to reverse-SA (RSA), attributed to the competition between SA of band-tail states and two-photon-related RSA. The measured large nonlinear refractive index of the order of 10 −10 cm 2 /W indicates InN as a potential material for all-optical switching and related applications

Inhomogeneous free-electron distribution in InN nanowires: Photoluminescence excitation experiments

Science.gov (United States)

Segura-Ruiz, J.; Molina-Sánchez, A.; Garro, N.; García-Cristóbal, A.; Cantarero, A.; Iikawa, F.; Denker, C.; Malindretos, J.; Rizzi, A.

2010-09-01

Photoluminescence excitation (PLE) spectra have been measured for a set of self-assembled InN nanowires (NWs) and a high-crystalline quality InN layer grown by molecular-beam epitaxy. The PLE experimental lineshapes have been reproduced by a self-consistent calculation of the absorption in a cylindrical InN NW. The differences in the PLE spectra can be accounted for the inhomogeneous electron distribution within the NWs caused by a bulk donor concentration (ND+) and a two-dimensional density of ionized surface states (Nss+) . For NW radii larger than 30 nm, ND+ and Nss+ modify the absorption edge and the lineshape, respectively, and can be determined from the comparison with the experimental data.

LDA+U and tight-binding electronic structure of InN nanowires

Science.gov (United States)

Molina-Sánchez, A.; García-Cristóbal, A.; Cantarero, A.; Terentjevs, A.; Cicero, G.

2010-10-01

In this paper we employ a combined ab initio and tight-binding approach to obtain the electronic and optical properties of hydrogenated Indium nitride (InN) nanowires. We first discuss InN band structure for the wurtzite structure calculated at the LDA+U level and use this information to extract the parameters needed for an empirical tight-binging implementation. These parameters are then employed to calculate the electronic and optical properties of InN nanowires in a diameter range that would not be affordable by ab initio techniques. The reliability of the large nanowires results is assessed by explicitly comparing the electronic structure of a small diameter wire studied both at LDA+U and tight-binding level.

Watching Dallas again 2: Locating viewing pleasures—An audience study of the new Dallas

Directory of Open Access Journals (Sweden)

Raquel L. Raj

2015-06-01

Full Text Available This audience reception project performs a study of the first season of the new Dallas (2012–14 in terms of its lack of ironic viewing, which relegates the show to a restorative form of nostalgia.

Nitridation effects of Si(1 1 1) substrate surface on InN nanorods grown by plasma-assisted molecular beam epitaxy

Energy Technology Data Exchange (ETDEWEB)

Feng, Shan [Faculty of Materials Science and Chemistry, China University of Geosciences, Wuhan 430074 (China); Tan, Jin, E-mail: jintan_cug@163.com [Faculty of Materials Science and Chemistry, China University of Geosciences, Wuhan 430074 (China); Engineering Research Center of Nano-Geomaterials of Ministry of Education, China University of Geosciences, Wuhan 430074 (China); Li, Bin; Song, Hao; Wu, Zhengbo; Chen, Xin [Faculty of Materials Science and Chemistry, China University of Geosciences, Wuhan 430074 (China)

2015-02-05

Graphical abstract: The morphology evolution of InN nanorods in samples (g)–(i). The alignment of InN nanorods is improved and the deviation angle distribution narrows down with increase in nitriding time. It suggests that extending the nitriding time can enhance the vertical orientation of InN nanorods. - Highlights: • InN nanorods were grown on surface nitrided Si(1 1 1) substrate using PAMBE system. • Nitridation of substrate surface has a strong effect on morphology of InN nanorods. • InN nanorods cannot be formed with 1 min nitridation of Si(1 1 1) substrate. • Increasing nitriding time will increase optimum growth temperature of InN nanorods. • Increasing nitriding time can enhance vertical orientation of InN nanorods. - Abstract: The InN nanorods were grown on Si(1 1 1) substrate by plasma-assisted molecular beam epitaxy (PAMBE) system, with a substrate nitridation process. The effect of nitriding time of Si(1 1 1) substrate on morphology, orientation and growth temperature of InN nanorods was characterized via scanning electron microscopy (SEM) and X-ray diffraction (XRD). The deviation angle of InN nanorods was measured to evaluate the alignment of arrays. The results showed that InN nanorods could not be formed with 1 min nitridation of Si(1 1 1) substrate, but they could be obtained again when the nitriding time was increased to more than 10 min. In order to get aligned InN nanorods, the growth temperature needed to increase with longer nitriding time. The vertical orientation of InN nanorods could be enhanced with increase in nitriding time. The influence of the substrate nitridation on the photoluminescence (PL) spectra of InN nanorods has been investigated.

Project management plan : Dallas Integrated Corridor Management (ICM) demonstration project.

Science.gov (United States)

2010-12-01

The Dallas Integrated Corridor Management System Demonstration Project is a multi-agency, de-centralized operation which will utilize a set of regional systems to integrate the operations of the corridor. The purpose of the Dallas ICM System is to im...

Effect of indium accumulation on the characteristics of a-plane InN epi-films under different growth conditions

Energy Technology Data Exchange (ETDEWEB)

Lo, Yun-Yo [Institute of Photonics, National Changhua University of Education, Changhua, Taiwan, ROC (China); Huang, Man-Fang, E-mail: mfhuang@cc.ncue.edu.tw [Institute of Photonics, National Changhua University of Education, Changhua, Taiwan, ROC (China); Chiang, Yu-Chia [Institute of Photonics, National Changhua University of Education, Changhua, Taiwan, ROC (China); Fan, Jenn-Chyuan [Department of Electronic Engineering, Nan Kai University of Technology, Nantou, Taiwan, ROC (China)

2015-08-31

This study investigated the influence of indium accumulation happened on the surface of a-plane InN grown under different growth conditions. Three different growth rates with N/In ratio from stoichiometric to N-rich were used to grow a-plane InN epifilms on GaN-buffered r-plane sapphires by plasma-assisted molecular beam epitaxy. When a-plane InN was grown above 500 °C with a high growth rate, abnormally high in-situ reflectivity was found during a-plane InN growth, which was resulted from indium accumulation on surface owing to In-N bonding difficulty on certain crystal faces of a-plane InN surface. Even using excess N-flux, indium accumulation could still be found in initial growth and formed 3-dimension-like patterns on a-plane InN surface which resulted in rough surface morphology. By reducing growth rate, surface roughness was improved because indium atoms could have more time to migrate to suitable position. Nonetheless, basal stacking fault density and crystal anisotropic property were not affected by growth rate. - Highlights: • High growth temperature could cause indium accumulation on a-plane InN surface. • Indium accumulation on a-plane InN surface causes rough surface. • Low growth rate improves surface morphology but not crystal quality.

Structure analysis of InN film using extended X-ray absorption fine structure method

Energy Technology Data Exchange (ETDEWEB)

Miyajima, T.; Kobayashi, T.; Hirata, S. [Core Technology Development Center, Core Technology and Network Company, Sony Corporation, 4-14-1 Asahi-cho, Atsugi, Kanagawa 243-0014 (Japan); Kudo, Y.; Liu, K.L. [Technology Solutions Center, Sony Corporation, 4-16-1 Okata, Atsugi, Kanagawa 243-0021 (Japan); Uruga, T.; Honma, T. [Japan Synchrotron Radiation Research Institute, Mikazuki-cho, Hyogo 679-5198 (Japan); Saito, Y.; Hori, M.; Nanishi, Y. [Department of Photonics, Ritsumeikan University, 1-1-1 Noji-Higashi, Kusatsu, Shiga 525-8577 (Japan)

2002-12-01

We investigated the local atomic structure around In atoms of MBE-grown InN which has a direct bandgap energy of 0.8 eV, using extended X-ray absorption fine structure (EXAFS) oscillation of In K-edge. The signals from the first-nearest neighbor atoms (N) and second-nearest atoms (In) from In atoms were clearly observed and the atomic bond length of In-N and In-In was estimated to be d{sub In-N}=0.215 nm and d{sub In-In}=0.353 nm, respectively. The In-N bond length of d{sub In-In}=0.353 nm was closed to the a-axis lattice constant of a=0.3536 nm, which was determined using X-ray diffraction measurements. The obtained local atomic structure agreed with the calculated ideal structure. We conclude, therefore, that the InN film with a bandgap energy of 0.8 eV has a high structural symmetry in the range of a few A around In atoms. (Abstract Copyright [2002], Wiley Periodicals, Inc.)

Structure analysis of InN film using extended X-ray absorption fine structure method

International Nuclear Information System (INIS)

Miyajima, T.; Kobayashi, T.; Hirata, S.; Kudo, Y.; Liu, K.L.; Uruga, T.; Honma, T.; Saito, Y.; Hori, M.; Nanishi, Y.

2002-01-01

We investigated the local atomic structure around In atoms of MBE-grown InN which has a direct bandgap energy of 0.8 eV, using extended X-ray absorption fine structure (EXAFS) oscillation of In K-edge. The signals from the first-nearest neighbor atoms (N) and second-nearest atoms (In) from In atoms were clearly observed and the atomic bond length of In-N and In-In was estimated to be d In-N =0.215 nm and d In-In =0.353 nm, respectively. The In-N bond length of d In-In =0.353 nm was closed to the a-axis lattice constant of a=0.3536 nm, which was determined using X-ray diffraction measurements. The obtained local atomic structure agreed with the calculated ideal structure. We conclude, therefore, that the InN film with a bandgap energy of 0.8 eV has a high structural symmetry in the range of a few A around In atoms. (Abstract Copyright [2002], Wiley Periodicals, Inc.)

Impact of potassium and water on the electronic properties of InN(0001) surfaces

International Nuclear Information System (INIS)

Reiss, S.; Eisenhardt, A.; Krischok, S.; Himmerlich, M.

2014-01-01

In this work we investigate the interaction of potassium and water with 2 x 2 reconstructed InN(0001) surfaces prepared by plasma-assisted molecular beam epitaxy. The influence of adsorbate-substrate-interaction on surface properties is characterized in-situ by photoelectron spectroscopy. Potassium exposure leads to a strong reduction in the work function Φ to 1.6 eV revealing a charge transfer from the adsorbate to the InN surface. In parallel, a reduction of the surface downward band bending by 0.2 eV and hence a reduced electron accumulation density is observed. While interaction of water with clean InN(0001)-2 x 2 surfaces induces only minor changes in the surface band bending, water adsorption at potassium covered InN(0001) leads to a reversal of the K-induced reduction in surface band bending and a slight increase of Φ to 2.4 eV. These results show that surrounding water modifies the interaction of potassium with InN(0001) surfaces. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Radiation defects in InN irradiated with high-energy electrons

International Nuclear Information System (INIS)

Zhivul'ko, V.D.; Mudryj, A.V.; Yakushev, M.V.; Martin, R.; Shaff, V.; Lu, Kh.; Gurskij, A.L.

2013-01-01

The influence of high energy (6 MeV, fluencies 10 15 – 10 18 cm -2 ) electron irradiation on the fundamental absorption and luminescence properties of InN thin films which were grown on sapphire substrates by molecular bean epitaxial has been studied. It is found that electron irradiation increases the electron concentration and band gap energy E g of InN. The shift of the band gap energy E g is a manifestation of the Burshtein-Mossa effect. (authors)

Characterization of as-grown and adsorbate-covered N-polar InN surfaces using in situ photoelectron spectroscopy

International Nuclear Information System (INIS)

Eisenhardt, Anja; Himmerlich, Marcel; Krischok, Stefan

2012-01-01

The surface electronic properties and adsorption behaviour of as-grown and oxidized N-polar InN films are characterized by photoelectron spectroscopy (XPS, UPS). The epitaxial growth of the InN layers was performed by plasma-assisted molecular beam epitaxy on GaN/6H-SiC(000-1). After growth and in situ characterization the InN surfaces were exposed to molecular oxygen to evaluate the adsorption behaviour of O 2 on N-polar InN and to study its impact on the surface electronic properties of the III-nitride material. The results are compared with studies on In-polar InN on GaN/sapphire templates. The as-grown N-polar InN surface exhibits a pronounced surface state at a binding energy of ∝1.6 eV. The valence band minimum lies about 0.8-1.0 eV below the surface Fermi level. Additionally, the XPS core level binding energies for InN(000-1) are reduced compared to InN(0001) films, indicating different surface band bending for clean N-polar and In-polar InN, respectively. The interaction of molecular oxygen with the InN(000-1) surface leads to a downward band bending by 0.1 eV compared to the initial state. Additional adsorption of species from the residual gas of the UHV chamber increases the surface downward band bending. Furthermore two pronounced oxygen related states with an energy distance of ∝5 eV could be detected in the valence band region. The adsorbed oxygen results in an additional component in the N1s core level spectra, which is interpreted as formation of NO x bonds. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

In induced reconstructions of Si(1 1 1) as superlattice matched epitaxial templates for InN growth

International Nuclear Information System (INIS)

Kuyyalil, Jithesh; Tangi, Malleswararao; Shivaprasad, S.M.

2013-01-01

Graphical abstract: Display Omitted Highlights: ► A novel growth method to form InN at low growth temperatures. ► Use of Si reconstruction as a growth template for group III nitrides. ► Band gap variation of InN – Moss–Burstein shift – non-parabolic conduction band for InN. ► Super lattice matching epitaxy of metal induced reconstructions with III–V unit cell. -- Abstract: Indium induced surface reconstructions of Si(1 1 1)-7 × 7 are used as templates to grow high quality InN. We grow InN on Si(1 1 1)-7 × 7, Si(1 1 1)-4 × 1-In and Si(1 1 1)-1 × 1-In reconstructed surfaces and study the quality of the films formed using complementary characterization tools. InN grown on Si(1 1 1)-1 × 1-In reconstruction shows superior film quality with lowest band-edge emission having a narrow full width at half maximum, intense and narrow 0 0 0 2 X-ray diffraction, low surface roughness and carrier concentration an order lower than other samples. We attribute the high quality of the film formed at 300 °C to the integral matching of InN and super lattice dimensions, we also study the reasons for the band gap variation of InN in the literature. Present study demonstrates the proposed Superlattice Matched Epitaxy can be a general approach to grow good quality InN at much lower growth temperature on compatible In induced reconstructions of the Si surface.

Epitaxial growth of InN on c-plane sapphire by pulsed laser deposition with r.f. nitrogen radical source

International Nuclear Information System (INIS)

Ohta, J.; Fujioka, H.; Honke, T.; Oshima, M.

2004-01-01

We have grown InN films on c-plane sapphire substrates by pulsed laser deposition (PLD) with a radio frequency nitrogen radical source for the first time and investigated the effect of the substrate surface nitridation on the structural and electrical properties of InN films with reflection high energy electron diffraction (RHEED), atomic force microscope, the Hall effect measurements and high-resolution X-ray diffraction (HRXRD). RHEED and HRXRD characterizations revealed that high-quality InN grows epitaxially on sapphire by PLD and its epitaxial relationship is InN (0 0 0 1) parallel sapphire (0 0 0 1) and InN [2 -1 -1 0] parallel sapphire [1 0 -1 0]. The InN crystalline quality and the electron mobility are improved by the substrate nitridation process. The area of the pits at the InN surface is reduced by the substrate nitridation process probably due to the reduction in the interface energy between InN and the substrate. The full width at half maximum of the -1 -1 2 4 X-ray rocking curve for InN grown by the present technique without using any buffer layers was as small as 34.8 arcmin. These results indicate that the present technique is promising for the growth of the high-quality InN films

Polarity control and growth mode of InN on yttria-stabilized zirconia (111) surfaces

International Nuclear Information System (INIS)

Kobayashi, Atsushi; Okubo, Kana; Ohta, Jitsuo; Oshima, Masaharu; Fujioka, Hiroshi

2012-01-01

We have found that polarity of epitaxial InN layers has been controlled by choice of a capping material during high-temperature annealing of yttria-stabilized zirconia (YSZ) (111) substrates in air. Angle-resolved X-ray photoelectron spectroscopy has revealed that the amount of segregation of Y atoms to the YSZ surface depended on the capping material of the substrates. In-polar and N-polar InN have been reproducibly grown on Y-segregated and Y-segregation-free YSZ surfaces, respectively. We have also found that the growth of the first monolayer (ML) of N-polar InN proceeds in a step-flow mode which then switches to layer-by-layer mode after the coverage by 1-ML-thick InN. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Raman scattering and Rutherford backscattering studies on InN films grown by plasma-assisted molecular beam epitaxy

International Nuclear Information System (INIS)

Chung, Yee Ling; Peng Xingyu; Liao, Ying Chieh; Yao Shude; Chen, Li Chyong; Chen, Kuei Hsien; Feng, Zhe Chuan

2011-01-01

A series of InN thin films was grown on sapphire substrates via plasma-assisted molecular beam epitaxy (PA-MBE) with different nitrogen plasma power. Various characterization techniques, including Hall, photoluminescence, Raman scattering and Rutherford backscattering, have been employed to study these InN films. Good crystalline wurtzite structures have been identified for all PA-MBE grown InN films on sapphire substrate, which have narrower XRD wurtzite (0002) peaks, showed c-axis Raman scattering allowed longitudinal optical (LO) modes of A 1 and E 1 plus E 2 symmetry, and very weak backscattering forbidden transverse optical (TO) modes. The lower plasma power can lead to the lower carrier concentration, to have the InN film close to intrinsic material with the PL emission below 0.70 eV. With increasing the plasma power, high carrier concentration beyond 1 x 10 20 cm -3 can be obtained, keeping good crystalline perfection. Rutherford backscattering confirmed most of InN films keeping stoichiometrical In/N ratios and only with higher plasma power of 400 W leaded to obvious surface effect and interdiffusion between the substrate and InN film.

Four bars inn; Four bars inn

Energy Technology Data Exchange (ETDEWEB)

Nishiumi, T. [National Defense Academy, Kanagawa (Japan)

1999-05-15

The name Four Bars Inn puns on four drinking bars and four bars on a musical score. It is a public house sited on the busy St. Mary Street, Cardiff, England. During my stay in that town, I often attended the regular jam session that opened at the bar at nine o`clock every Monday evening. A jam session is an event in which any amateur player, and a professional artist occasionally, is allowed to come on the stage freely and to play jazz, the participation fee as low as 300-yen. It is an occasion that provides a friendly meeting of man and woman, young and old, everyone carrying a pint of ale. Senior people happily talking to young ones aged like their grandchildren certainly presents a heart-warming scene, which we scarcely encounter in Japan. The affection that the British entertain toward their domestic furnishings relayed down through many a generation may lead to their respect for senior citizens. I heartily look forward detecting like scenes some day at drinking spots in Japan where the consumption-happy days are over. (NEDO)

System acceptance test plan : Dallas Integrated Corridor Management (ICM) demonstration project.

Science.gov (United States)

2013-02-01

The Dallas Area Rapid Transit (DART) is leading the US 75 Integrated Corridor Management (ICM) : Demonstration Project for the Dallas region. Coordinated corridor operations and management is : predicated on being able to share transportation informa...

A porous layer: an evidence for the deterioration of MOVPE InN grown at high temperature (∝650 C)

International Nuclear Information System (INIS)

Sugita, K.; Hashimoto, A.; Yamamoto, A.

2009-01-01

This paper indicates an evidence for the deterioration of the MOVPE InN during the growth at high temperature (∝650 C). It is noted that the deterioration occurs near the interface and InN film becomes porous layer during the further growth. The porous layer has high electron density. The rate-limiting process of N-face InN decomposition depends on atomic hydrogen. The atomic hydrogen produced by the decomposition of NH 3 is responsible for the deterioration of InN film. The crystal quality of InN improves with decreasing the porous layer which is important for MOVPE InN. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Temperature dependence of InN growth on (0001) sapphire substrates by atmospheric pressure hydride vapor phase epitaxy

International Nuclear Information System (INIS)

Kumagai, Yoshinao; Adachi, Hirokazu; Otake, Aya; Higashikawa, Yoshihiro; Togashi, Rie; Murakami, Hisashi; Koukitu, Akinori

2010-01-01

The temperature dependence of InN growth on (0001) sapphire substrates by atmospheric pressure hydride vapor phase epitaxy (HVPE) was investigated. N-polarity single-crystal InN layers were successfully grown at temperatures ranging from 400 to 500 C. The a and c lattice constants of InN layers grown at 450 C or below were slightly larger than those of InN layers grown above 450 C due to oxygen incorporation that also increased the carrier concentration. The optical absorption edge of the InN layer decreased from above 2.0 to 0.76 eV when the growth temperature was increased from 450 to 500 C. (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Adsorption of gas molecules on graphene-like InN monolayer: A first-principle study

Energy Technology Data Exchange (ETDEWEB)

Sun, Xiang; Yang, Qun [Faculty of Mechanical and Electrical Engineering, Guilin University of Electronic Technology, 541004 Guilin (China); Key Laboratory of Optoelectronic Technology & Systems, Education Ministry of China, Chongqing University and College of Optoelectronic Engineering, Chongqing University, 400044 Chongqing (China); Meng, Ruishen [Faculty of Mechanical and Electrical Engineering, Guilin University of Electronic Technology, 541004 Guilin (China); Tan, Chunjian [Key Laboratory of Optoelectronic Technology & Systems, Education Ministry of China, Chongqing University and College of Optoelectronic Engineering, Chongqing University, 400044 Chongqing (China); Liang, Qiuhua [Faculty of Mechanical and Electrical Engineering, Guilin University of Electronic Technology, 541004 Guilin (China); Jiang, Junke [Faculty of Mechanical and Electrical Engineering, Guilin University of Electronic Technology, 541004 Guilin (China); Key Laboratory of Optoelectronic Technology & Systems, Education Ministry of China, Chongqing University and College of Optoelectronic Engineering, Chongqing University, 400044 Chongqing (China); Ye, Huaiyu [Key Laboratory of Optoelectronic Technology & Systems, Education Ministry of China, Chongqing University and College of Optoelectronic Engineering, Chongqing University, 400044 Chongqing (China); Chen, Xianping, E-mail: xianpingchen@cqu.edu.cn [Faculty of Mechanical and Electrical Engineering, Guilin University of Electronic Technology, 541004 Guilin (China); Key Laboratory of Optoelectronic Technology & Systems, Education Ministry of China, Chongqing University and College of Optoelectronic Engineering, Chongqing University, 400044 Chongqing (China)

2017-05-15

Highlights: • A comprehensive adsorption mechanism of InN monolayer is theoretical studied to distinguish the physic/chemi-sorption. • Different adsorption sites for different gases are systematically discussed. • The influence (enhanced or weakened) of external electric field to InN-gas system is well investigated. • The influences of gas adsorption to the optical properties (work function and light adsorption ability) of InN monolayer are also researched. - Abstract: Using first-principles calculation within density functional theory (DFT), we study the gas (CO, NH{sub 3}, H{sub 2}S, NO{sub 2}, NO, SO{sub 2}) adsorption properties on the surface of single-layer indium nitride (InN). Four different adsorption sites (Bridge, In, N, Hollow) are chosen to explore the most sensitive adsorption site. On the basis of the adsorption energy, band gap and charge transfer, we find that the most energetic favourable site is changeable between In site and N site for different gases. Moreover, our results reveal that InN is sensitive to NH{sub 3}, SO{sub 2}, H{sub 2}S and NO{sub 2}, by a physisorption or a chemisorption nature. We also perform a perpendicular electric field to the system and find that the applied electric field has a significant effect for the adsorption process. Besides, we also observed the desorption effects on NH{sub 3} adsorbed at the hollow site of InN when the electric field applied. In addition, the optical properties of InN monolayer affected by different gases are also discussed. Most of the gas adsorptions will cause the inhibition of light adsorption while the others can reduce the work function or enhance the adsorption ability in visible region. Our theoretical results indicate that monolayer InN is a promising candidate for gas sensing applications.

Theoretical Investigation on Structural and Electronic Properties of InN Growth on Ce-Stabilized Zirconia (111 Substrates

Directory of Open Access Journals (Sweden)

Yao Guo

2016-01-01

Full Text Available The structural and electronic properties of InN on Ce-stabilized zirconia (CeSZ (111 substrates are investigated using first-principles calculations based on density functional theory with GGA + U method. Surface energy calculations indicate that the structure of Ce-segregated surface is more energetically stable than that of Ce-segregation-free surface. Adsorption energies of indium and nitrogen atoms on both Ce-segregated and Ce-segregation-free CeSZ (111 surfaces at the initial growth stage have been studied. The results suggest that the first layer of InN films consists of a nitrogen layer, which leads to epitaxial relationships between InN (0001 // CeSZ (111 and InN [112¯0] // CeSZ [11¯0]. In addition, density of states (DOS analysis revealed that the hybridization effect plays a crucial role in determining the interface structure for the growth of InN on CeSZ (111 surfaces. Furthermore, adsorption energies of indium atoms on the nitrogen layer have also been evaluated in order to investigate the lattice polarity determination for InN films. It was found that an indium atom preferentially adsorbs at the center of three nitrogen atoms stacked on the CeSZ substrate, which results in the formation of In-polarity InN.

In-situ SiN{sub x}/InN structures for InN field-effect transistors

Energy Technology Data Exchange (ETDEWEB)

Zervos, Ch., E-mail: hzervos@physics.uoc.gr; Georgakilas, A. [Microelectronics Research Group (MRG), Institute of Electronic Structure and Laser (IESL), Foundation for Research and Technology-Hellas - FORTH, P.O. Box 1385, GR-70013 Heraklion, Crete (Greece); Department of Physics, University of Crete, P.O. Box 2208, GR-71003 Heraklion, Crete (Greece); Adikimenakis, A.; Kostopoulos, A.; Kayambaki, M.; Tsagaraki, K.; Konstantinidis, G. [Microelectronics Research Group (MRG), Institute of Electronic Structure and Laser (IESL), Foundation for Research and Technology-Hellas - FORTH, P.O. Box 1385, GR-70013 Heraklion, Crete (Greece); Beleniotis, P. [Department of Physics, University of Crete, P.O. Box 2208, GR-71003 Heraklion, Crete (Greece)

2016-04-04

Critical aspects of InN channel field-effect transistors (FETs) have been investigated. SiN{sub x} dielectric layers were deposited in-situ, in the molecular beam epitaxy system, on the surface of 2 nm InN layers grown on GaN (0001) buffer layers. Metal-insulator-semiconductor Ni/SiN{sub x}/InN capacitors were analyzed by capacitance-voltage (C-V) and current-voltage measurements and were used as gates in InN FET transistors (MISFETs). Comparison of the experimental C-V results with self-consistent Schrödinger-Poisson calculations indicates the presence of a positive charge at the SiN{sub x}/InN interface of Q{sub if} ≈ 4.4 – 4.8 × 10{sup 13 }cm{sup −2}, assuming complete InN strain relaxation. Operation of InN MISFETs was demonstrated, but their performance was limited by a catastrophic breakdown at drain-source voltages above 2.5–3.0 V, the low electron mobility, and high series resistances of the structures.

MOCVD growth of GaN layer on InN interlayer and relaxation of residual strain

Energy Technology Data Exchange (ETDEWEB)

Lee, Keon-Hun; Park, Sung Hyun; Kim, Jong Hack; Kim, Nam Hyuk; Kim, Min Hwa [Department of Materials Science and Engineering, Seoul National University, Seoul, 151-742 (Korea, Republic of); Na, Hyunseok [Department of Advanced Materials Science and Engineering, Daejin University, Pocheon, 487-711 (Korea, Republic of); Yoon, Euijoon, E-mail: eyoon@snu.ac.k [Department of Materials Science and Engineering, Seoul National University, Seoul, 151-742 (Korea, Republic of); Department of Nano Science and Technology, Graduate School of Convergence Science and Technology, Seoul National University, Suwon 433-270 (Korea, Republic of)

2010-09-01

100 nm InN layer was grown on sapphire c-plane using a metal-organic chemical vapor deposition (MOCVD) system. Low temperature (LT) GaN layer was grown on InN layer to protect InN layer from direct exposure to hydrogen flow during high temperature (HT) GaN growth and/or abrupt decomposition. Subsequently, thick HT GaN layer (2.5 {mu}m thick) was grown at 1000 {sup o}C on LT GaN/InN/sapphire template. Microstructure of epilayer-substrate interface was investigated by transmission electron microscopy (TEM). From the high angle annular dark field TEM image, the growth of columnar structured LT GaN and HT GaN with good crystallinity was observed. Though thickness of InN interlayer is assumed to be about 100 nm based on growth rate, it was not clearly shown in TEM image due to the InN decomposition. The lattice parameters of GaN layers were measured by XRD measurement, which shows that InN interlayer reduces the compressive strain in GaN layer. The relaxation of compressive strain in GaN layer was also confirmed by photoluminescence (PL) measurement. As shown in the PL spectra, red shift of GaN band edge peak was observed, which indicates the reduction of compressive strain in GaN epilayer.

A comparative study on MOVPE InN grown on Ga- and N-polarity bulk GaN

International Nuclear Information System (INIS)

Wang, W.J.; Miwa, H.; Hashimoto, A.; Yamamoto, A.

2006-01-01

The influence of substrate polarity on the growth of InN film by MOVPE was investigated using bulk GaN as a substrate. Single-crystalline In- and N-polarity InN films were obtained on Ga- and N-polarity GaN substrate, respectively. Significant difference of the morphologies between the In- and N-polarity InN films was found. For the In-polarity InN film, the morphology was similar to that grown on sapphire substrate. The film surface was consisted of grains with small facets. In contrast, for the N-polarity InN film, the surface was consisted of large hexagonal shape crystal grains with flat surface. The grain size was about 2 μm in diameter on the average, and two-dimensional growth was enhanced obviously for each crystal grain. The influence of the growth temperature on the morphology, polarity, and optical property was also investigated. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Near-infrared InN quantum dots on high-In composition InGaN

Energy Technology Data Exchange (ETDEWEB)

Soto Rodriguez, Paul E. D.; Gomez, Victor J.; Kumar, Praveen; Calleja, Enrique; Noetzel, Richard [Instituto de Sistemas Optoelectronicos y Microtecnologia (ISOM), Universidad Politecnica de Madrid, Ciudad Universitaria s/n, 28040 Madrid (Spain)

2013-04-01

We report the growth of InN quantum dots (QDs) on thick InGaN layers with high In composition (>50%) by molecular beam epitaxy. Optimized growth conditions are identified for the InGaN layers at reduced growth temperature and increased active N flux resulting in minimized phase separation and defect generation. The InN QDs grown on top of the optimized InGaN layer exhibit small size, high density, and photoluminescence up to room temperature. The InN/InGaN QDs reveal excellent potential for intermediate band solar cells with the InGaN and InN QD bandgap energies tuned to the best match of absorption to the solar spectrum.

Customer Satisfaction at the Hospitality Industry: Holiday Inn Helsinki-Vantaa Airport

OpenAIRE

Eld, Anna

2015-01-01

The intention of this Bachelor’s Degree thesis was to examine and observe the customer service and especially customer satisfaction in a hotel industry, and Holiday Inn Helsinki-Vantaa Airport was selected to be an example for this survey. This survey and thesis is carried out by the author in collaboration with Holiday Inn Helsinki-Vantaa Airport, which was the commissioner of this Bachelor’s Degree thesis. This hotel was chosen since the author of this thesis did her second internship there...

Effects of rapid thermal annealing on the optical and electrical properties of InN epilayers

International Nuclear Information System (INIS)

Shu, G W; Wu, P F; Liu, Y W; Wang, J S; Shen, J L; Lin, T Y; Pong, P J; Chi, G C; Chang, H J; Chen, Y F; Lee, Y C

2006-01-01

We studied the optical and electrical properties of InN epilayers with rapid thermal annealing (RTA). The intensity of the photoluminescence (PL) and the carrier mobility were found to increase as the temperature of RTA was increased. We suggest that the formation of compensating acceptors (indium vacancies) after RTA is responsible for the improvement of the quality in InN. The dependence of the PL emission peak on carrier concentration provides a possible method for estimating the carrier concentration in degenerate InN. (letter to the editor)

41 CFR 301-74.14 - Are there any special requirements for sponsoring or funding a conference at a hotel, motel or...

Science.gov (United States)

2010-07-01

... 41 Public Contracts and Property Management 4 2010-07-01 2010-07-01 false Are there any special requirements for sponsoring or funding a conference at a hotel, motel or other place of public accommodation... Responsibilities § 301-74.14 Are there any special requirements for sponsoring or funding a conference at a hotel...

PHYSICAL PROPERTIES OF InN PARTICLES OBTAINED BY RF MAGNETRON SPUTTERING

Directory of Open Access Journals (Sweden)

Roberto Bernal Correa

2014-01-01

Full Text Available InN layers were prepared by magnetron sputtering, in a mixed atmosphere of argon and nitrogen on Si substrates (100, Si (111, and glass. The substrate temperature Ts was varied (300-500 oC in order to correlate it with the optical, structural, and morphological properties of the layers. X-ray results have revealed a presence of hexagonal InN type wurtzite in each of the layers in addition to oxides of indium (InxOy attributed to different factors. Dependence was evident on the crystalline quality of each layer according to Ts. The optical absorption coefficient and the band gap were determined from the absorbance and transmittance spectra obtained by UV/Vis. Vibration modes associated with the semiconductor InN and InxOy were identified by Raman microscopy. The morphology of the layers and the grain size was analyzed from SEM micrographs where it was determined the formation of particulates  ~ 0.5 mm and ~ 50 nm of different geometries.

Molecular beam epitaxy of InN layers on Sapphire, GaN and indium tin oxide

Energy Technology Data Exchange (ETDEWEB)

Denker, Christian; Landgraf, Boris; Schuhmann, Henning; Malindretos, Joerg; Seibt, Michael; Rizzi, Angela [IV. Physikalisches Institut, Georg-August-Universitaet Goettingen (Germany); Segura-Ruiz, Jaime; Gomez-Gomez, Maribel; Cantarero, Andres [Materials Science Institute, University of Valencia, Paterna (Spain)

2009-07-01

Among the group-III nitrides semiconductors, InN is the one with the narrowest gap (0.67 eV), lowest effective electron mass and highest peak drift velocity. It is therefore a very interesting material for several applications, in particular semiconductor solar cells. Furthermore, the high electron affinity makes it suitable also as electrode material for organic solar cells. InN layers were grown by molecular beam epitaxy on MOCVD GaN templates, on bare c-plane sapphire and on polycrystalline indium tin oxide. On all substrates the III-V ratio as well as the substrate temperature was varied. A RHEED analysis of InN growth on GaN showed a relatively sharp transition from N-rich and columnar growth to In-rich growth with droplet formation by increasing the In flux impinging on the surface. The InN layers on single crystalline substrates were characterized by SEM, AFM, XRD, PL and Raman. The InN layers on ITO were mainly analyzed with respect to the surface morphology with SEM. HRTEM in cross section gives insight into the structure of the interface to the ITO substrate.

Applications of ZnO:Al deposited by RF sputtering to InN low-cost technology

Energy Technology Data Exchange (ETDEWEB)

Fernandez, S. [Departamento de Energias Renovables, Energia Solar Fotovoltaica, Centro de Investigaciones Energeticas, Medioambientales y Tecnologicas (CIEMAT), Madrid (Spain); Naranjo, F.B.; Valdueza-Felip, S. [Grupo de Ingenieria Fotonica, Departamento de Electronica, Escuela Politecnica Superior, Universidad de Alcala Campus Universitario, Madrid (Spain); Abril, O. de [ISOM y Departamento de Fisica Aplicada, Escuela Tecnica Superior de Ingenieros de Telecomunicacion, Universidad Politenica de Madrid (Spain)

2010-07-15

InN/ZnO:Al heterostructures deposited at low temperature on different substrates by radio-frequency sputtering were studied. Using ZnO:Al as buffer layer, an improvement in the InN structural properties was achieved. Evaluating ZnO:Al as contact on InN, an Ohmic behaviour for the as-deposited layer on InN was achieved. A specific contact resistance of 2 {omega} cm{sup 2} was measured without any post-deposition treatment. These properties could result very promising for optoelectronic device applications. (Abstract Copyright [2010], Wiley Periodicals, Inc.)

Threats of Violence in Schools: The Dallas Independent School District's Response.

Science.gov (United States)

Ryan-Arrendondo, Kim; Renouf, Kristin; Egyed, Carla; Doxey, Meredith; Dobbins, Maria; Sanchez, Serafin; Rakowitz, Bert

2001-01-01

Discusses the Dallas Public Schools' procedures for assessing the potential for violence among children who express intent to harm others. The Dallas Violence Risk Assessment (DVRA) was developed to evaluate students who have made threats of violence, and to assist school staff in determining appropriate intervention strategies. Describes the…

Analysis of biaxial strain in InN(0001) epilayers grown by molecular beam epitaxy

International Nuclear Information System (INIS)

Dimakis, E.; Domagala, J.; Iliopoulos, E.; Adikimenakis, A.; Georgakilas, A.

2007-01-01

The in-plane lattice parameters of InN, GaN and Al 2 O 3 in a InN/GaN/Al 2 O 3 (0001) heterostructure have been measured as a function of temperature in the range of 25-350 C, using high resolution X-ray diffraction. The results reveal that both the GaN and InN crystals follow the in-plane thermal expansion of the Al 2 O 3 substrate's lattice and there is no rearrangement of misfit dislocations at the InN/GaN and GaN/Al 2 O 3 interfaces. It was also found that either compressive or tensile character of residual biaxial strain is possible for the InN films, depending on the two-dimensional (2D) or three-dimensional (3D) growth mode of InN on the GaN(0001) buffer layer. The tensile strain is inherent to the nucleation and coalescence of 3D islands. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

High-phase-purity zinc-blende InN on r-plane sapphire substrate with controlled nitridation pretreatment

International Nuclear Information System (INIS)

Hsiao, C.-L.; Wu, C.-T.; Hsu, H.-C.; Hsu, G.-M.; Chen, L.-C.; Liu, T.-W.; Shiao, W.-Y.; Yang, C. C.; Gaellstroem, Andreas; Holtz, Per-Olof; Chen, C.-C.; Chen, K.-H.

2008-01-01

High-phase-purity zinc-blende (zb) InN thin film has been grown by plasma-assisted molecular-beam epitaxy on r-plane sapphire substrate pretreated with nitridation. X-ray diffraction analysis shows that the phase of the InN films changes from wurtzite (w) InN to a mixture of w-InN and zb-InN, to zb-InN with increasing nitridation time. High-resolution transmission electron microscopy reveals an ultrathin crystallized interlayer produced by substrate nitridation, which plays an important role in controlling the InN phase. Photoluminescence emission of zb-InN measured at 20 K shows a peak at a very low energy, 0.636 eV, and an absorption edge at ∼0.62 eV is observed at 2 K, which is the lowest bandgap reported to date among the III-nitride semiconductors

Growth and properties of InN, InGaN, and InN/InGaN quantum wells

Energy Technology Data Exchange (ETDEWEB)

Naoi, H.; Na, H. [Center for Promotion of the COE Program, Ritsumeikan University, 1-1-1 Noji-Higashi, Kusatsu, Shiga 525-8577 (Japan); Kurouchi, M.; Muto, D.; Takado, S.; Araki, T.; Nanishi, Y. [Dept. of Photonics, Ritsumeikan University, 1-1-1 Noji-Higashi, Kusatsu, Shiga 525-8577 (Japan); Miyajima, T. [Optoelectronics Laboratory, Materials Laboratories, Sony Corporation, 4-14-1 Asahi, Atsugi, Kanagawa 243-0014 (Japan)

2006-01-01

This paper describes our recent progress on InN, In-rich In{sub x}Ga{sub 1-x}N, and InN/In{sub x}Ga{sub 1-x}N quantum wells (QWs) grown by radio-frequency plasma-assisted molecular-beam epitaxy. Among the essential growth sequences to obtain high-quality InN, the nitridation process of (0001) sapphire substrates was reexamined. It was found that the lower-temperature and longer-period nitridation-process was very effective in improving crystalline quality of InN films. We succeeded in dramatically improving c -axis orientation of InN films without deteriorating their a -axis orientation by nitridating the substrates at a relatively low-temperature of 300 C for a relatively long period of 2 h. The full widths at half maximum (FWHMs) of (0002) X-ray rocking curves as narrow as 1 arcmin were obtained from only 400 nm thick InN films. These FWHMs are the narrowest value ever reported for InN and moreover approximately a twentieth part of the values obtained from our conventional InN films with a similar thickness, which were grown via the conventional nitridation process carried out at 550 C for 1 h. Furthermore interference fringes in X-ray diffraction ({omega}-2{theta} scan) were observed from these improved InN films. These high crystalline quality InN layers have been employed as a template for the growth of In-rich In{sub x}Ga{sub 1-x}N layers (0.70{<=}x{<=}0.94). The resultant In{sub x}Ga{sub 1-x}N layers have shown dramatic improvements in not only the surface morphology but also both the a- and c-axis orientations. By employing In{sub 0.8}Ga{sub 0.2}N layers of improved quality as the bottom barrier layer, InN/In{sub 0.8}Ga{sub 0.2}N multiple quantum well (MQW) and single quantum well (SQW) structures with different well widths were fabricated. Clear satellite peaks of X-ray diffraction were observed from these MQW structures. Both of these SQW and MQW structures have exhibited a blue shift of the photoluminescence peak energy with decreasing well width

Evaluation of the Environmental Health Conditions of Qom Hotels & Inns

Directory of Open Access Journals (Sweden)

B. Farzinnia

2009-02-01

Full Text Available Background and ObjectivesTourism is one of the three major global industries with 4 percent annual economic growth. Qom with roughly 17 million tourists in 2005 was the second religious tourism center in Iran. This study was designed to determine the environmental health criteria of Qom hotels and inns in 2007.MethodsThis descriptive - cross sectional study was carried out based on a standard check list of substance of edible, drinkable, cosmetic and hygienic products law from ministry of health and medical sciences. The checklist included 73 questions which were completed by face to face interviews and sanitary inspections. After analyzing the results of each residential center, the questionnaires were classified into three categories: hygienic (over 80 score, sanitary (40-79 and unacceptable centers (less than 40. The data were presented and analyzed by descriptive and analytical statistical methods such as X 2 and Fisher exact test.ResultsThe percentages of hygienic, sanitary and unacceptable conditions of hotels and inns were 35.5, 54.8 and 9.7, respectively. There was a direct relationship between academic degree of residential managers and the validity of employees health card (P=0.042 ConclusionBased on this the research, the environmental status of Qom hotels and inns was in relatively desirable conditions. Residential places with unacceptable condition were almost located in the old region of the city (e.g. around the Holly Shrine. Due to the structural failures, architectural problems and tremendous cost for repairs, it’s better that their activities be stopped and banned by government. With regard to the high percentage of hotels with sanitary conditions, at least improvements in health conditions accompanied by training and supervision are recommended. Keywords: Environmental Health; Environment and Public Health; Hotel; Inn; Qom, Iran.

4th INNS Symposia Series on Computational Intelligence in Information Systems

CERN Document Server

Au, Thien

2015-01-01

This book constitutes the refereed proceedings of the Fourth International Neural Network Symposia series on Computational Intelligence in Information Systems, INNS-CIIS 2014, held in Bandar Seri Begawan, Brunei in November 2014. INNS-CIIS aims to provide a platform for researchers to exchange the latest ideas and present the most current research advances in general areas related to computational intelligence and its applications in various domains. The 34 revised full papers presented in this book have been carefully reviewed and selected from 72 submissions. They cover a wide range of topics and application areas in computational intelligence and informatics.  

Ab-initio study of Mg-doped InN(0001 surface

Directory of Open Access Journals (Sweden)

A. Belabbes

2013-01-01

Full Text Available We study the incorporation of Mg atoms into the InN(0001 surface. Energies and atomic geometries are described within density functional theory, while the electronic structure is investigated by an approximate quasiparticle method that yields a gap value of 0.7 eV for bulk InN. The formation of substitutional Mg is energetically favored in the surface layer. The surface electronic structure is less influenced by Mg-derived states. The Fermi level is pinned by In-derived surface states. With increasing depth of Mg beneath the surface the Fermi-level position moves toward the valence band top, suggesting formation of holes and, hence, p-doping of Mg in bulk-like layers.

76 FR 31823 - Technical Amendment to List of User Fee Airports: Addition of Dallas Love Field Municipal Airport...

Science.gov (United States)

2011-06-02

...] Technical Amendment to List of User Fee Airports: Addition of Dallas Love Field Municipal Airport, Dallas... fee airport designation for Dallas Love Field Municipal Airport, in Dallas, Texas. User fee airports.... Generally, the type of airport that would seek designation as a user fee airport would be one at which a...

Crystallinity, Surface Morphology, and Photoelectrochemical Effects in Conical InP and InN Nanowires Grown on Silicon.

Science.gov (United States)

Parameshwaran, Vijay; Xu, Xiaoqing; Clemens, Bruce

2016-08-24

The growth conditions of two types of indium-based III-V nanowires, InP and InN, are tailored such that instead of yielding conventional wire-type morphologies, single-crystal conical structures are formed with an enlarged diameter either near the base or near the tip. By using indium droplets as a growth catalyst, combined with an excess indium supply during growth, "ice cream cone" type structures are formed with a nanowire "cone" and an indium-based "ice cream" droplet on top for both InP and InN. Surface polycrystallinity and annihilation of the catalyst tip of the conical InP nanowires are observed when the indium supply is turned off during the growth process. This growth design technique is extended to create single-crystal InN nanowires with the same morphology. Conical InN nanowires with an enlarged base are obtained through the use of an excess combined Au-In growth catalyst. Electrochemical studies of the InP nanowires on silicon demonstrate a reduction photocurrent as a proof of photovolatic behavior and provide insight as to how the observed surface polycrystallinity and the resulting interface affect these device-level properties. Additionally, a photovoltage is induced in both types of conical InN nanowires on silicon, which is not replicated in epitaxial InN thin films.

A new skipper species for Peru: Dalla granites (Mabille, 1898) (Lepidoptera: Hesperiidae)

OpenAIRE

Cerdeña, José Alfredo; Huamaní, Erick; Delgado, Rómulo; Lamas, Gerardo

2014-01-01

Se registra por primera vez para Perú al raro hespérido Dalla granites (Mabille, 1898) (Lepidoptera: Hesperiidae), previamente citado de Ecuador y Bolivia. The rare skipper Dalla granites (Mabille, 1898) (Lepidoptera: Hesperiidae), previously cited from Ecuador and Bolivia is reported for the first time in Peru.

Growth of InN on 6H-SiC by plasma assisted molecular beam epitaxy

Energy Technology Data Exchange (ETDEWEB)

Brown, April S.; Kim, Tong-Ho; Choi, Soojeong; Wu, Pae; Morse, Michael [Department of Electrical and Computer Engineering, Duke University, 128 Hudson Hall, Durham, NC (United States); Losurdo, Maria; Giangregorio, Maria M.; Bruno, Giovanni [Institute of Inorganic Methodologies and of Plasmas, IMIP-CNR and INSTM UdR Bari, via Orabona, 4, 70126 Bari (Italy); Moto, Akihiro [Innovation Core SEI, Inc., 3235 Kifer Road, Santa Clara, CA 95051 (United States)

2006-06-15

We have investigated the growth of InN films by plasma assisted molecular beam epitaxy on the Si-face of 6H-SiC(0001). Growth is performed under In-rich conditions using a two-step process consisting of the deposition of a thin, low-temperature 350 C InN buffer layer, followed by the subsequent deposition of the InN epitaxial layer at 450 C. The effect of buffer annealing is investigated. The structural and optical evolution of the growing layer has been monitored in real time using RHEED and spectroscopic ellipsometry. Structural, morphological, electrical and optic properties are discussed. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Heteroepitaxial growth of In-face InN on GaN (0001) by plasma-assisted molecular-beam epitaxy

International Nuclear Information System (INIS)

Dimakis, E.; Iliopoulos, E.; Tsagaraki, K.; Kehagias, Th.; Komninou, Ph.; Georgakilas, A.

2005-01-01

The thermodynamic aspects of indium-face InN growth by radio frequency plasma-assisted molecular-beam epitaxy (rf-MBE) and the nucleation of InN on gallium-face GaN (0001) surface were investigated. The rates of InN decomposition and indium desorption from the surface were measured in situ using reflected high-energy electron diffraction and the rf-MBE 'growth window' of In-face InN (0001) was identified. It is shown that sustainable growth can be achieved only when the arrival rate of active nitrogen species on the surface is higher than the arrival rate of indium atoms. The maximum substrate temperature permitting InN growth as a function of the active nitrogen flux was determined. The growth mode of InN on Ga-face GaN (0001) surface was investigated by reflected high-energy electron diffraction and atomic force microscopy. It was found to be of the Volmer-Weber-type for substrate temperatures less than 350 deg. C and of the Stranski-Krastanov for substrate temperatures between 350 and 520 deg. C. The number of monolayers of initial two-dimensional growth, in the case of Stranski-Krastanov mode, varies monotonically with substrate temperature, from 2 ML at 400 deg. C to about 12 ML at 500 deg. C. The evolution and coalescence of nucleated islands were also investigated as a function of substrate temperature. It was found that at higher temperature their coalescence is inhibited leading to porous-columnar InN thin films, which exhibit growth rates higher than the nominal value. Therefore, in order to achieve continuous InN layers on GaN (0001) a two-step growth approach is introduced. In that approach, InN is nucleated at low temperatures on GaN and the growth continues until full coalescence of the nucleated islands. Subsequently, this nucleation layer is overgrown at higher substrate temperature in order to achieve high-quality continuous films. The InN films grown by the two-step method were investigated by x-ray diffraction, Hall-effect measurements, and

Generation of ultra-small InN nanocrystals by pulsed laser ablation of suspension in organic solution

Energy Technology Data Exchange (ETDEWEB)

Kursungoez, Canan; Uzcengiz Simsek, Elif; Ortac, Buelend [Bilkent University, Materials Science and Nanotechnology Department, UNAM-National Nanotechnology Research Center, Ankara (Turkey); Bilkent University, Institute of Materials Science and Nanotechnology, Ankara (Turkey); Tuzakli, Refik [Bilkent University, Materials Science and Nanotechnology Department, UNAM-National Nanotechnology Research Center, Ankara (Turkey)

2017-03-15

Nanostructures of InN have been extensively investigated since nano-size provides a number of advantages allowing applications in nanoscale electronic and optoelectronic devices. It is quite important to obtain pure InN nanocrystals (InN-NCs) to reveal the characteristic features, which gain interest in the literature. Here, we proposed a new approach for the synthesis of ultra-small hexagonal InN-NCs by using suspension of micron-sized InN powder in ethanol with pulsed laser ablation method. The liquid environment, laser energy and ablation time were optimized and a post-synthesis treatment, centrifugation, was performed to achieve InN-NCs with the smallest size. Besides, the micron-sized InN powder suspension, as a starting material, enabled us to obtain InN-NCs having diameters smaller than 5 nm. We also presented a detailed characterization of InN-NCs and demonstrated that the formation mechanism mainly depends on the fragmentation due to laser irradiation of the suspension. (orig.)

Generation of ultra-small InN nanocrystals by pulsed laser ablation of suspension in organic solution

International Nuclear Information System (INIS)

Kursungoez, Canan; Uzcengiz Simsek, Elif; Ortac, Buelend; Tuzakli, Refik

2017-01-01

Nanostructures of InN have been extensively investigated since nano-size provides a number of advantages allowing applications in nanoscale electronic and optoelectronic devices. It is quite important to obtain pure InN nanocrystals (InN-NCs) to reveal the characteristic features, which gain interest in the literature. Here, we proposed a new approach for the synthesis of ultra-small hexagonal InN-NCs by using suspension of micron-sized InN powder in ethanol with pulsed laser ablation method. The liquid environment, laser energy and ablation time were optimized and a post-synthesis treatment, centrifugation, was performed to achieve InN-NCs with the smallest size. Besides, the micron-sized InN powder suspension, as a starting material, enabled us to obtain InN-NCs having diameters smaller than 5 nm. We also presented a detailed characterization of InN-NCs and demonstrated that the formation mechanism mainly depends on the fragmentation due to laser irradiation of the suspension. (orig.)

Determination of dislocation densities in InN

Energy Technology Data Exchange (ETDEWEB)

Ardali, Sukru; Tiras, Engin [Department of Physics, Faculty of Science, Anadolu University, Yunus Emre Campus, Eskisehir 26470 (Turkey); Gunes, Mustafa; Balkan, Naci [School of Computer Science and Electronic Engineering, University of Essex, Wivenhoe Park, Colchester CO4 3SQ (United Kingdom); Ajagunna, Adebowale Olufunso; Iliopoulos, Eleftherios; Georgakilas, Alexandros [Microelectronics Research Group, IESL, FORTH and Physics Department, University of Crete, P.O. Box 1385, 71110 Heraklion-Crete (Greece)

2012-03-15

The magneto-transport measurements, carried out at magnetic fields up to 11 T and in the temperature range between 1.8 K and 300 K, are used to investigate the scattering mechanisms in GaN/InN/AlN double heterojunctions. Theoretical modeling is based on a variational approach to solving Boltzmann transport equation. It is found that dislocation scattering is the dominant scattering mechanisms at low temperatures because of the large lattice mismatch with the substrate and hence the high density of dislocations in these material systems. Nevertheless, InN epilayers are characterized by a high background carrier density, probably associated with unwanted impurities. Therefore, we also included in our calculations the ionized impurity scattering. However, the effect of ionized impurity scattering as well as the acoustic phonon scattering, remote- background-ionized impurity scattering, and interface roughness scattering on electron mobility are much smaller than that of dislocation scattering. The dislocation densities, in samples with InN thicknesses of 0.4, 0.6 and 0.8 {mu}m, are then determined from the best fit to the experimental data for the low-temperature transport mobility (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Effective electron mass and phonon modes in n-type hexagonal InN

Science.gov (United States)

Kasic, A.; Schubert, M.; Saito, Y.; Nanishi, Y.; Wagner, G.

2002-03-01

Infrared spectroscopic ellipsometry and micro-Raman scattering are used to study vibrational and electronic properties of high-quality hexagonal InN. The 0.22-μm-thick highly n-conductive InN film was grown on c-plane sapphire by radio-frequency molecular-beam epitaxy. Combining our results from the ellipsometry data analysis with Hall-effect measurements, the isotropically averaged effective electron mass in InN is determined as 0.14m0. The resonantly excited zone center E1 (TO) phonon mode is observed at 477 cm-1 in the ellipsometry spectra. Despite the high electron concentration in the film, a strong Raman mode occurs in the spectral range of the unscreened A1(LO) phonon. Because an extended carrier-depleted region at the sample surface can be excluded from the ellipsometry-model analysis, we assign this mode to the lower branch of the large-wave-vector LO-phonon-plasmon coupled modes arising from nonconserving wave-vector scattering processes. The spectral position of this mode at 590 cm-1 constitutes a lower limit for the unscreened A1(LO) phonon frequency.

Synthesis of InN nanoparticles by rapid thermal ammonolysis

Czech Academy of Sciences Publication Activity Database

Šimek, P.; Sedmidubský, D.; Klimová, K.; Huber, Š.; Brázda, Petr; Mikulics, M.; Jankovský, O.; Sofer, Z.

2014-01-01

Roč. 16, č. 12 (2014), "2805-1"-"2805-11" ISSN 1388-0764 R&D Projects: GA ČR GA13-20507S Institutional support: RVO:68378271 Keywords : InN * nanoparticles * nanocrystals Subject RIV: CA - Inorganic Chemistry Impact factor: 2.184, year: 2014

Watching Dallas again 1: Doing retro audience research

Directory of Open Access Journals (Sweden)

Amanda Gilroy

2015-06-01

Full Text Available This essay and the audience reception projects it introduces alleviate the desperation of seeking the television audience by recourse to Ien Ang's influential book, Watching Dallas ([1982] 1985. Within the context of a unit on audience research in a master's-level course on media, two groups of students explored the possibilities of remixing Ang in the present digital media landscape via informants' comments on the first season of the new series of Dallas (2012–14. Discourses of nostalgia circulate within and around the text, as well as the project itself. Retro audience research generates not only data about the affective memories and critical reflections of informants but also insights into research methods and the production of new nostalgic subjects.

Photomodulated reflectance study on optical property of InN thin films grown by reactive gas-timing rf magnetron sputtering

International Nuclear Information System (INIS)

Porntheeraphat, S.; Nukeaw, J.

2008-01-01

The photoreflectance (PR) spectroscopy has been applied to investigate the band-gap energy (E g ) of indium nitride (InN) thin films grown by rf magnetron sputtering. A novel reactive gas-timing technique applied for the sputtering process has been successfully employed to grow InN thin films without neither substrate heating nor post annealing. The X-ray diffraction (XRD) patterns exhibit strong peaks in the orientation along (0 0 2) and (1 0 1) planes, corresponding to the polycrystalline hexagonal-InN structure. The band-gap transition energy of InN was determined by fitting the PR spectra to a theoretical line shape. The PR results show the band-gap energy at 1.18 eV for hexagonal-InN thin films deposited at the rf powers of 100 and 200 W. The high rf sputtering powers in combination with the gas-timing technique should lead to a high concentration of highly excited nitrogen ions in the plasma, which enables the formation of InN without substrate heating. Auger electron spectroscopy (AES) measurements further reveal traces of oxygen in these InN films. This should explain the elevated band-gap energy, in reference to the band-gap value of 0.7 eV for pristine InN films

Solar-Heated Office Building -- Dallas, Texas

Science.gov (United States)

1982-01-01

Solar heating system designed to supply 87 percent of space heating and 100 percent of potable hot-water needs of large office building in Dallas, Texas. Unique feature of array serves as roofing over office lobby and gives building attractive triangular appearance. Report includes basic system drawings, test data, operating procedures, and maintenance instructions.

A control technique of oxygen contamination by Ga beam irradiation in InN MOMBE growth

International Nuclear Information System (INIS)

Isamoto, K.; Uesaka, Y.; Yamamoto, A.; Hashimoto, A.

2006-01-01

We have investigated about a control technique of oxygen contamination into the InN layers by simultaneous irradiation of Ga beam during RF-MOMBE growth using the combination of the TMIn and the RF-plasma nitrogen sources. Red shifts of the band gap energy and the improvement of the electrical properties have been achieved by the Ga beam irradiation. The suppression mechanism of the oxygen contamination has been discussed from the experimental results of the InN growth by the RF-MOMBE with the Ga beam irradiation. The present results strongly indicate that the simultaneous irradiation of the Ga beam would be useful to suppress the oxygen contamination into the InN layers during the growth. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Ultrafast Carrier Relaxation in InN Nanowires Grown by Reactive Vapor Transport

Directory of Open Access Journals (Sweden)

Zervos Matthew

2008-01-01

Full Text Available Abstract We have studied femtosecond carrier dynamics in InN nanowires grown by reactive vapor transport. Transient differential absorption measurements have been employed to investigate the relaxation dynamics of photogenerated carriers near and above the optical absorption edge of InN NWs where an interplay of state filling, photoinduced absorption, and band-gap renormalization have been observed. The interface between states filled by free carriers intrinsic to the InN NWs and empty states has been determined to be at 1.35 eV using CW optical transmission measurements. Transient absorption measurements determined the absorption edge at higher energy due to the additional injected photogenerated carriers following femtosecond pulse excitation. The non-degenerate white light pump-probe measurements revealed that relaxation of the photogenerated carriers occurs on a single picosecond timescale which appears to be carrier density dependent. This fast relaxation is attributed to the capture of the photogenerated carriers by defect/surface related states. Furthermore, intensity dependent measurements revealed fast energy transfer from the hot photogenerated carriers to the lattice with the onset of increased temperature occurring at approximately 2 ps after pulse excitation.

Investigation of the near-surface structures of polar InN films by chemical-state-discriminated hard X-ray photoelectron diffraction

International Nuclear Information System (INIS)

Yang, A. L.; Yamashita, Y.; Kobata, M.; Yoshikawa, H.; Sakata, O.; Kobayashi, K.; Matsushita, T.; Píš, I.; Imura, M.; Yamaguchi, T.; Nanishi, Y.

2013-01-01

Near-surface structures of polar InN films were investigated by laboratory-based hard X-ray photoelectron diffraction (HXPD) with chemical-state-discrimination. HXPD patterns from In 3d 5/2 and N 1s core levels of the In-polar and N-polar InN films were different from each other and compared with the simulation results using a multiple-scattering cluster model. It was found that the near-surface structure of the In-polar InN film was close to the ideal wurtzite structure. On the other hand, on the N-polar InN film, defects-rich surface was formed. In addition, the existence of the In-polar domains was observed in the HXPD patterns.

High electron mobility InN

International Nuclear Information System (INIS)

Jones, R. E.; Li, S. X.; Haller, E. E.; van Genuchten, H. C. M.; Yu, K. M.; Ager, J. W. III; Liliental-Weber, Z.; Walukiewicz, W.; Lu, H.; Schaff, W. J.

2007-01-01

Irradiation of InN films with 2 MeV He + ions followed by thermal annealing below 500 deg. C creates films with high electron concentrations and mobilities, as well as strong photoluminescence. Calculations show that electron mobility in irradiated samples is limited by triply charged donor defects. Subsequent thermal annealing removes a fraction of the defects, decreasing the electron concentration. There is a large increase in electron mobility upon annealing; the mobilities approach those of the as-grown films, which have 10 to 100 times smaller electron concentrations. Spatial ordering of the triply charged defects is suggested to cause the unusual increase in electron mobility

Epitaxial growth of high purity cubic InN films on MgO substrates using HfN buffer layers by pulsed laser deposition

International Nuclear Information System (INIS)

Ohba, R.; Ohta, J.; Shimomoto, K.; Fujii, T.; Okamoto, K.; Aoyama, A.; Nakano, T.; Kobayashi, A.; Fujioka, H.; Oshima, M.

2009-01-01

Cubic InN films have been grown on MgO substrates with HfN buffer layers by pulsed laser deposition (PLD). It has been found that the use of HfN (100) buffer layers allows us to grow cubic InN (100) films with an in-plane epitaxial relationship of [001] InN //[001] HfN //[001] MgO . X-ray diffraction and electron back-scattered diffraction measurements have revealed that the phase purity of the cubic InN films was as high as 99%, which can be attributed to the use of HfN buffer layers and the enhanced surface migration of the film precursors by the use of PLD. - Graphical abstract: Cubic InN films have been grown on MgO substrates with HfN buffer layers by pulsed laser deposition (PLD). It has been revealed that the phase purity of the cubic InN films was as high as 99 %, which can be attributed to the use of HfN buffer layers and the enhanced surface migration of the film precursors by the use of PLD.

Role of dislocations and carrier concentration in limiting the electron mobility of InN films grown by plasma assisted molecular beam epitaxy

Science.gov (United States)

Tangi, Malleswararao; De, Arpan; Shivaprasad, S. M.

2018-01-01

We report the molecular beam epitaxy growth of device quality InN films on GaN epilayer and nano-wall network (NWN) templates deposited on c-sapphire by varying the film thickness up to 1 μm. The careful experiments are directed towards obtaining high mobility InN layers having a low band gap with improved crystal quality. The dislocation density is quantified by using high resolution X-ray diffraction rocking curve broadening values of symmetric and asymmetric reflections, respectively. We observe that the dislocation density of the InN films grown on GaN NWN is less than that of the films grown on the GaN epilayer. This is attributed to the nanoepitaxial lateral overlayer growth (ELOG) process, where the presence of voids at the interface of InN/GaN NWN prevents the propagation of dislocation lines into the InN epilayers, thereby causing less defects in the overgrown InN films. Thus, this new adaptation of the nano-ELOG growth process enables us to prepare InN layers with high electron mobility. The obtained electron mobility of 2121 cm2/Vs for 1 μm thick InN/GaN NWN is comparable with the literature values of similar thickness InN films. Furthermore, in order to understand the reasons that limit electron mobility, the charge neutrality condition is employed to study the variation of electron mobility as a function of dislocation density and carrier concentration. Overall, this study provides a route to attaining improved crystal quality and electronic properties of InN films.

Observation of Significant enhancement in the efficiency of a DSSC by InN nanoparticles over TiO 2-nanoparticle films

Science.gov (United States)

Wang, Tsai-Te; Raghunath, P.; Lu, Yun-Fang; Liu, Yu-Chang; Chiou, Chwei-Huawn; Lin, M. C.

2011-06-01

We have studied the effect of InN deposited over TiO2 nanoparticle (NP) films on the performance of dye-sensitized solar cells (DSSCs) using N3 dye with I/I3- electrolyte. A 10-20% increase in efficiency was observed for InN deposited, N3 sensitized 5-8.5 μm thick TiO2 films as compared to similar non-treated films. The deposition of InN was carried out in the temperature range of 573-723 K organometallic chemical vapor deposition (OMCVD). Spectral shifts and DFT calculations with a model anchoring group (R‧COOH) both suggest binding of the N3 dye directly to both InN and the InN/TiO2 sites.

Growth of vertically oriented InN nanorods from In-rich conditions on unintentionally patterned sapphire substrates

Energy Technology Data Exchange (ETDEWEB)

Terziyska, Penka T., E-mail: pterziy1@lakeheadu.ca [Semiconductor Research Laboratory, Department of Electrical Engineering, Lakehead University, 955 Oliver Road, Thunder Bay, ON P7B 5E1 (Canada); Butcher, Kenneth Scott A. [Semiconductor Research Laboratory, Department of Electrical Engineering, Lakehead University, 955 Oliver Road, Thunder Bay, ON P7B 5E1 (Canada); MEAglow Ltd., Box 398, 2400 Nipigon Road, Thunder Bay, ON P7C4W1 (Canada); Rafailov, Peter [Institute of Solid State Physics, Bulgarian Academy of Sciences, 72 Tzarigradsko Chaussee Blvd., 1784 Sofia (Bulgaria); Alexandrov, Dimiter [Semiconductor Research Laboratory, Department of Electrical Engineering, Lakehead University, 955 Oliver Road, Thunder Bay, ON P7B 5E1 (Canada); MEAglow Ltd., Box 398, 2400 Nipigon Road, Thunder Bay, ON P7C4W1 (Canada)

2015-10-30

Highlights: • Vertical InN nanorods are grown on selective areas of sapphire substrates. • In metal droplets nucleate on the sharp needle apexes on the selective areas. • The preferred orientation and the growth direction of the nanorods are (0 0 0 1). • The nanorods grow from the supersaturated indium melt on their tops. - Abstract: Vertically oriented InN nanorods were grown on selective areas of unintentionally patterned c-oriented sapphire substrates exhibiting sharp needles that preferentially accommodate In-metal liquid droplets, using Migration Enhanced Afterglow (MEAglow) growth technique. We point out that the formation of AlN needles on selected areas can be reproduced intentionally by over-nitridation of unmasked areas of sapphire substrates. The liquid indium droplets serve as a self-catalyst and the nanorods grow from the supersaturated indium melt in the droplet in a vertical direction. X-ray diffraction measurements indicate the presence of hexagonal InN only, with preferred orientation along (0 0 0 1) crystal axis, and very good crystalline quality. The room temperature Raman spectrum shows the presence of the A{sub 1}(TO), E{sub 2}(high) and A{sub 1}(LO) phonon modes of the hexagonal InN.

Investigation of InN layers grown by MOCVD using analytical and high resolution TEM: The structure, band gap, role of the buffer layers

International Nuclear Information System (INIS)

Ruterana, P.; Abouzaid, M.; Gloux, F.; Maciej, W.; Doualan, J.L.; Drago, M.; Schmidtling, T.; Pohl, U.W.; Richter, W.

2006-01-01

In this work we investigate the microstructure of InN layers grown by MOCVD on different buffer layers using TEM (InN, GaN). The large mismatch between the various lattices (InN, sapphire or GaN) leads to particular interface structures. Our local analysis allows to show that at atomic scale, the material has the InN lattice parameters and that no metallic In precipitates are present, meaning that the PL emission below 0.8 eV is a genuine property of the InN semiconductor. It is also shown that the N polar layers, which exhibit a 2D growth, have poorer PL emission than In polar layers. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Solar heating and domestic hot water system installed at North Dallas High School

Science.gov (United States)

1980-01-01

The solar energy system located at the North Dallas High School, Dallas, Texas is discussed. The system is designed as a retrofit in a three story with basement, concrete frame high school building. Extracts from the site files, specification references for solar modification to existing building heating and domestic hot water systems, drawings, installation, operation and maintenance instructions are included.

Morphology Controlled Fabrication of InN Nanowires on Brass Substrates

Directory of Open Access Journals (Sweden)

Huijie Li

2016-10-01

Full Text Available Growth of semiconductor nanowires on cheap metal substrates could pave the way to the large-scale manufacture of low-cost nanowire-based devices. In this work, we demonstrated that high density InN nanowires can be directly grown on brass substrates by metal-organic chemical vapor deposition. It was found that Zn from the brass substrates is the key factor in the formation of nanowires by restricting the lateral growth of InN. The nanowire morphology is highly dependent on the growth temperature. While at a lower growth temperature, the nanowires and the In droplets have large diameters. At the elevated growth temperature, the lateral sizes of the nanowires and the In droplets are much smaller. Moreover, the nanowire diameter can be controlled in situ by varying the temperature in the growth process. This method is very instructive to the diameter-controlled growth of nanowires of other materials.

Inhomogeneous electron distribution in InN nanowires: Influence on the optical properties

Energy Technology Data Exchange (ETDEWEB)

Molina-Sanchez, A.; Garro, N.; Garcia-Cristobal, A.; Cantarero, A. [Instituto de Ciencia de los Materiales, Universidad de Valencia (Spain); Segura-Ruiz, J. [European Synchrotron Radiation Facility, Experiments Div., Grenoble (France); Iikawa, F. [Instituto de Fisica Gleb Wataghin - Unicamp, CP 6165, Campinas (Brazil); Denker, C.; Malindretos, J.; Rizzi, A. [IV. Physikalisches Institut, Georg-August Universitaet Goettingen (Germany)

2012-03-15

In this work, we study theoretically and experimentally the influence of the surface electron accumulation on the optical properties of InN nanowires. For this purpose, the photoluminescence and photoluminescence excitation spectra have been measured for a set of self-assembled InN NWs grown under different conditions. The photoluminescence excitation experimental lineshapes have been reproduced by a self-consistent calculation of the absorption in a cylindrical InN nanowires. With the self-consistent model we can explore how the optical absorption depends on nanowires radius and doping concentration. Our model solves the Schroedinger equation for a cylindrical nanowire of infinite length, assuming a parabolic conduction band. The columnar geometry introduces effects in both the electron density and in the self-consistent conduction band profile, with no equivalence in planar layer. On the other hand, the differences in the photoluminescence excitation spectra are related to the inhomogeneous electron distribution inside the nanowires, caused by a bulk donor concentration and a two-dimensional density of ionized surface states. For nanowire radii larger than 30 nm, such concentrations modify the absorption edge and the lineshape, respectively, and can be determined from the comparison with the experimental data (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

High-surface-quality nanocrystalline InN layers deposited on GaN templates by RF sputtering

Energy Technology Data Exchange (ETDEWEB)

Valdueza-Felip, Sirona; Naranjo, Fernando B.; Gonzalez-Herraez, Miguel [Grupo de Ingenieria Fotonica, Departamento de Electronica, Escuela Politecnica Superior, Universidad de Alcala, Campus Universitario, 28871 Alcala de Henares, Madrid (Spain); Lahourcade, Lise; Monroy, Eva [Equipe mixte CEA-CNRS-UJF, Nanophysique et Semiconducteurs, INAC/SP2M/PSC, CEA-Grenoble, 17 rue des Martyrs, 38054 Grenoble Cedex 9 (France); Fernandez, Susana [Departamento de Energias Renovables, Energia Solar Fotovoltaica, Centro de Investigaciones Energeticas, Medioambientales y Tecnologicas (CIEMAT), Avda. Complutense 22, 28040 Madrid (Spain)

2011-01-15

We report a detailed study of the effect of deposition parameters on optical, structural, and morphological properties of InN films grown by reactive radio-frequency (RF) sputtering on GaN-on-sapphire templates in a pure nitrogen atmosphere. Deposition parameters under study are substrate temperature, RF power, and sputtering pressure. Wurtzite crystallographic structure with c-axis preferred growth orientation is confirmed by X-ray diffraction measurements. For the optimized deposition conditions, namely at a substrate temperature of 450 C and RF power of 30 W, InN films present a root-mean-square surface roughness as low as {proportional_to}0.4 nm, comparable to the underlying substrate. The apparent optical bandgap is estimated at 720 nm (1.7 eV) in all cases. However, the InN absorption band tail is strongly influenced by the sputtering pressure due to a change in the species of the plasma. (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

78 FR 4356 - Proposed Modification of the Dallas/Fort Worth Class B Airspace Area; TX

Science.gov (United States)

2013-01-22

... Dallas/Fort Worth International Airport (DFW) and Dallas Love Field Airport (DAL) within Class B airspace... acknowledge receipt of their comments on this action must submit with those comments a self-addressed, stamped... configuration has not kept pace with airport expansions and increasing operations and the current design makes...

First-principles study of Mg incorporation at wurtzite InN (0 0 0 1) and (0001-bar) surfaces

International Nuclear Information System (INIS)

Ding, S.F.; Qu, X.P.; Fan, G.H.

2009-01-01

In this article we investigate the energetics of Mg adsorption and incorporation at the InN(0 0 0 1) and InN(0001-bar) surfaces by the method of total energy plane-wave expansions with ultra-soft pseudo potential technology based on the density functional theory (DFT) in the generalized approximation (GGA). It is found that for a 1/4 monolayer (ML) coverage of the InN(0 0 0 1) surface, Mg atoms preferentially adsorb at the bridge sites and T4 sites, but they are unstable when compared with Mg incorporated in the first three layers. For a 1/4 ML coverage of the InN(0001-bar) surface, Mg atoms preferentially adsorb at the H3 sites with the formation energy of -3.49 (eV/(2x2) supercell), which is lower than that of the T4 sites, and the formation energy increases with increasing magnesium coverage. Further study shows that the formation energy for Mg atom is lower than that of In atom, which indicates that magnesium adsorption is more favorable in these conditions.

R&W Club Frederick Raises $1,500 for The Children’s Inn at Annual Golf Tournament | Poster

Science.gov (United States)

Forty-four government and contractor employees, along with their friends and family members, took to the Maryland National Golf Club course this fall for a cause. The R&W Club Frederick held its third annual golf tournament at the Middletown, Md., golf course on Sept. 14 to raise funds for The Children’s Inn at NIH, which celebrated its 25th anniversary this year. The Inn

Watching Dallas Again 1 : Doing Retro Audience Research

NARCIS (Netherlands)

Gilroy, Amanda

2014-01-01

This essay and the audience reception projects it introduces alleviate the desperation of seeking the television audience by recourse to Ien Ang's influential book, Watching Dallas ([1982] 1985). Within the context of a unit on audience research in a master's-level course on media, two groups of

"Could I return to my life?" Integrated Narrative Nursing Model in Education (INNE).

Science.gov (United States)

Artioli, Giovanna; Foà, Chiara; Cosentino, Chiara; Sulla, Francesco; Sollami, Alfonso; Taffurelli, Chiara

2018-03-28

The Integrated Narrative Nursing Model (INNM) is an approach that integrates the qualitative methodology typical of the human sciences, with the quantitative methodology more often associated with the natural sciences. This complex model, which combines a focus on narrative with quantitative measures, has recently been effectively applied to the assessment of chronic patients. In this study, the model is applied to the planning phase of education (Integrated Narrative Nursing Education, INNE), and proves to be a valid instrument for the promotion of the current educational paradigm that is centered on the engagement of both the patient and the caregiver in their own path of care. The aim of this study is therefore to describe the nurse's strategy in the planning of an educational intervention by using the INNE model. The case of a 70-year-old woman with pulmonary neoplasm is described at her first admission to Hospice. Each step conducted by the reference nurse, who uses INNE to record the nurse-patient narrative and collect subsequent questionnaires in order to create a shared educational plan, is also described. The information collected was submitted, starting from a grounded methodology to the following four levels of analysis: I. Needs Assessment, II. Narrative Diagnosis, III. Quantitative Outcome, IV. Integrated Outcome. Step IV, which is derived from the integration of all levels of analysis, allows a nurse to define, even graphically, the conceptual map of a patient's needs, resources and perspectives, in a completely tailored manner. The INNE model offers a valid methodological support for the professional who intends to educate the patient through an inter-subjective and engaged pathway, between the professional, their patient and the socio-relational context. It is a matter of adopting a complex vision that combines processes and methods that require a steady scientific basis and advanced methodological expertise with active listening and empathy

Understanding and optimization of InN and high indium containing InGaN alloys by metal organic chemical vapor deposition

Energy Technology Data Exchange (ETDEWEB)

Tuna, Oecal

2013-07-18

Among the III-nitride semiconductors (Ga,Al,In)N, InN is the most attractive one due to having the narrowest bandgap of 0.64 eV. The revision in the bandgap of InN makes the InGaN more important since one can cover the whole solar spectrum by only changing In composition in an InGaN layer. The comparison of quality of InN and InGaN layers grown using a metal organic chemical vapor deposition (MOCVD) and a molecular beam epitaxy (MBE) methods indicate that growth with MOCVD is the more challenging, again due to the high dissociation temperature of NH{sub 3} relative to the low decomposition temperature of InN (560-570 C). However, there is significant interest in developing an MOCVD process for InN and InGaN growth since MOCVD technology is the technology currently in use for commercial fabrication of group III nitride thin films. This thesis is therefore focused on a study of MOCVD growth of n- and p-type InN and In-rich InGaN films with the goal of providing new information on the influence of growth conditions on the film properties. Initially, a detailed investigation of MOCVD of InN is given. It is shown that MOCVD growth parameters (growth temperature and V/III ratio) have impacts on the layer properties such as In droplet formation on the surface as well as on its electrical and optical properties. PAS is employed for point defect analyzation. It is shown that In vacancies isolated by nitrogen vacancies are the dominant vacancy-type positron traps in InN. A decrease in the N vacancy concentration in InN is observed as a result of the growth temperature increase from 500 to 550 C. This is an indication of a reduction of N vacancy concentration by enhancing NH{sub 3} dissociation at high growth temperature. Results obtained from optical techniques (Raman and PL) are used to estimate the free carrier concentrations in InN. Electrical characterizations are also carried out using Hall measurements. Carrier concentration values obtained by these three techniques

Understanding and optimization of InN and high indium containing InGaN alloys by metal organic chemical vapor deposition

International Nuclear Information System (INIS)

Tuna, Oecal

2013-01-01

Among the III-nitride semiconductors (Ga,Al,In)N, InN is the most attractive one due to having the narrowest bandgap of 0.64 eV. The revision in the bandgap of InN makes the InGaN more important since one can cover the whole solar spectrum by only changing In composition in an InGaN layer. The comparison of quality of InN and InGaN layers grown using a metal organic chemical vapor deposition (MOCVD) and a molecular beam epitaxy (MBE) methods indicate that growth with MOCVD is the more challenging, again due to the high dissociation temperature of NH 3 relative to the low decomposition temperature of InN (560-570 C). However, there is significant interest in developing an MOCVD process for InN and InGaN growth since MOCVD technology is the technology currently in use for commercial fabrication of group III nitride thin films. This thesis is therefore focused on a study of MOCVD growth of n- and p-type InN and In-rich InGaN films with the goal of providing new information on the influence of growth conditions on the film properties. Initially, a detailed investigation of MOCVD of InN is given. It is shown that MOCVD growth parameters (growth temperature and V/III ratio) have impacts on the layer properties such as In droplet formation on the surface as well as on its electrical and optical properties. PAS is employed for point defect analyzation. It is shown that In vacancies isolated by nitrogen vacancies are the dominant vacancy-type positron traps in InN. A decrease in the N vacancy concentration in InN is observed as a result of the growth temperature increase from 500 to 550 C. This is an indication of a reduction of N vacancy concentration by enhancing NH 3 dissociation at high growth temperature. Results obtained from optical techniques (Raman and PL) are used to estimate the free carrier concentrations in InN. Electrical characterizations are also carried out using Hall measurements. Carrier concentration values obtained by these three techniques revealed a

Observation of complete oxidation of InN to In2O3 in air at elevated temperatures by using X-ray photoemission spectroscopy

International Nuclear Information System (INIS)

Lee, Ik-Jae; Yu, Chung-Jong; Hur, Tae-Bong; Kim, Hyung-Kook; Kim, Chae-Ok; Kim, Jae-Yong

2006-01-01

We present here an X-ray photoemission spectroscopy (XPS) analysis of a polycrystalline InN film on sapphire. The InN was completely oxidized to bixbyite in air after annealing at high temperatures. The analysis of the X-ray diffraction data demonstrated that the oxidation process started around 450 .deg. C. The high-resolution XPS data showed the In3d peaks and the N1s main peak located near 396.4 eV for the InN films. After oxidation, the N1s peak had completely disappeared while the In3d peaks had not changed. These results strongly indicate that the oxidation transformed the structure of InN film to In 2 O 3 .

High temperature electron cyclotron resonance etching of GaN, InN, and AlN

International Nuclear Information System (INIS)

Shul, R.J.; Kilcoyne, S.P.; Hagerott Crawford, M.; Parmeter, J.E.; Vartuli, C.B.; Abernathy, C.R.; Pearton, S.J.

1995-01-01

Electron cyclotron resonance etch rates for GaN, InN, and AlN are reported as a function of temperature for Cl 2 /H 2 /CH 4 /Ar and Cl 2 /H 2 /Ar plasmas. Using Cl 2 /H 2 /CH 4 /Ar plasma chemistry, GaN etch rates remain relatively constant from 30 to 125 degree C and then increase to a maximum of 2340 A/min at 170 degree C. The InN etch rate decreases monotonically from 30 to 150 degree C and then rapidly increases to a maximum of 2300 A/min at 170 degree C. This is the highest etch rate reported for this material. The AlN etch rate decreases throughout the temperature range studied with a maximum of 960 A/min at 30 degree C. When CH 4 is removed from the plasma chemistry, the GaN and InN etch rates are slightly lower, with less dramatic changes with temperature. The surface composition of the III--V nitrides remains unchanged after exposure to the Cl 2 /H 2 /CH 4 /Ar plasma over the temperatures studied

Surface acoustic waves and elastic constants of InN epilayers determined by Brillouin scattering

Energy Technology Data Exchange (ETDEWEB)

Jimenez-Rioboo, R.J.; Prieto, C. [Instituto de Ciencia de Materiales de Madrid, CSIC, Cantoblanco, Madrid (Spain); Cusco, R.; Domenech-Amador, N.; Artus, L. [Institut Jaume Almera, Consell Superior d' Investigacions Cientifiques (CSIC), Lluis Sole i Sabaris s.n., Barcelona, Catalonia (Spain); Yamaguchi, T.; Nanishi, Y. [Faculty of Science and Engineering, Ritsumeikan University, Noji-Higashi, Kusatsu, Shiga (Japan)

2012-06-15

The surface acoustic wave velocity in InN has been experimentally determined by means of Brillouin scattering experiments on c - and m -face epilayers. From simulations based on the Green's function formalism we determine the shear elastic constants c{sub 66} and c{sub 44} and propose a complete set of elastic constants for wurtzite InN. The analysis of the sagittal and azimuthal dependence of the surface acoustic wave velocity indicates a slightly different elastic behavior of the m -face sample that basically affects the c{sub 44} elastic constant. (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Formation of InN atomic-size wires by simple N adsorption on the In/Si(111)–(4 × 1) surface

International Nuclear Information System (INIS)

Guerrero-Sánchez, J.; Takeuchi, Noboru

2016-01-01

Highlights: • N atoms on the surface form bonds with two In atoms and one Si atom. • Surface formation energy calculations show two stable structures with formation of InN atomic-size wires. • Projected density of states shows a tendency to form In−N and Si−N bonds on the surface. • Charge density corroborates the covalent character of the In−N bonds. - Abstract: We have carried out first principles total energy calculations to study the formation of InN atomic-size wires on the In/Si(111)–(4 × 1) surface. In its most favorable adsorption site, a single N atom forms InN arrangements. The deposit of 0.25 monolayers (MLs) of N atoms, result in the breaking of one of the original In chains and the formation of an InN atomic size wire. Increasing the coverage up to 0.5 ML of N atoms results in the formation of two of those wires. Calculated surface formation energies show that for N-poor conditions the most stable configuration is the original In/Si(111)–(4 × 1) surface with no N atoms. Increasing the N content, and in a reduced range of chemical potential, the formation of an InN wire is energetically favorable. Instead, from intermediate to N-rich conditions, two InN atomic wires are more stable. Projected density of states calculations have shown a trend to form covalent bonds between the In−p and N−p orbitals in these stable models.

The structural evolution of InN nanorods to microstructures on Si (111) by molecular beam epitaxy

International Nuclear Information System (INIS)

Anyebe, E A; Zhuang, Q; Kesaria, M; Krier, A

2014-01-01

We report the catalyst free growth of wurtzite InN nanorods (NRs) and microislands on bare Si (111) by plasma-assisted molecular beam epitaxy at various temperatures. The morphological evolution from NRs to three dimensional (3D) islands as a function of growth temperature is investigated. A combination of tapered, non-tapered, and pyramidal InN NRs are observed at 490 °C, whereas the InN evolves to faceted microislands with an increase in growth temperature to 540 °C and further developed to indented and smooth hemispherical structures at extremely high temperatures (630 °C). The evolution from NRs to microislands with increase in growth temperature is attributed to the lowering of the surface free energy of the growing crystals with disproportionate growth velocities along different growth fronts. The preferential adsorption of In atoms on the (0001) c-plane and (10-10) m-plane promotes the growth of NRs at relatively low growth temperature and 3D microislands at higher temperatures. The growth rate imbalance along different planes facilitates the development of facets on 3D microislands. A strong correlation between the morphological and structural properties of the 3D films is established. XRD studies reveal that the NRs and the faceted microislands are crystalline, whereas the hemispherical microislands grown at extremely high growth temperature contain In adlayers. Finally, photoluminescent emissions were observed at ∼0.75 eV from the InN NRs. (paper)

Systematic study on dynamic atomic layer epitaxy of InN on/in +c-GaN matrix and fabrication of fine-structure InN/GaN quantum wells: Role of high growth temperature

Science.gov (United States)

Yoshikawa, Akihiko; Kusakabe, Kazuhide; Hashimoto, Naoki; Hwang, Eun-Sook; Imai, Daichi; Itoi, Takaomi

2016-12-01

The growth kinetics and properties of nominally 1-ML (monolayer)-thick InN wells on/in +c-GaN matrix fabricated using dynamic atomic layer epitaxy (D-ALEp) by plasma-assisted molecular beam epitaxy were systematically studied, with particular attention given to the effects of growth temperature. Attention was also given to how and where the ˜1-ML-thick InN layers were frozen or embedded on/in the +c-GaN matrix. The D-ALEp of InN on GaN was a two-stage process; in the 1st stage, an "In+N" bilayer/monolayer was formed on the GaN surface, while in the 2nd, this was capped by a GaN barrier layer. Each process was monitored in-situ using spectroscopic ellipsometry. The target growth temperature was above 620 °C and much higher than the upper critical epitaxy temperature of InN (˜500 °C). The "In+N" bilayer/monolayer tended to be an incommensurate phase, and the growth of InN layers was possible only when they were capped with a GaN layer. The InN layers could be coherently inserted into the GaN matrix under self-organizing and self-limiting epitaxy modes. The growth temperature was the most dominant growth parameter on both the growth process and the structure of the InN layers. Reflecting the inherent growth behavior of D-ALEp grown InN on/in +c-GaN at high growth temperature, the embedded InN layers in the GaN matrix were basically not full-ML in coverage, and the thickness of sheet-island-like InN layers was essentially either 1-ML or 2-ML. It was found that these InN layers tended to be frozen at the step edges on the GaN and around screw-type threading dislocations. The InN wells formed type-I band line-up heterostructures with GaN barriers, with exciton localization energies of about 300 and 500 meV at 15 K for the 1-ML and 2-ML InN wells, respectively.

Structural and nanomechanical properties of InN films grown on Si(1 0 0) by femtosecond pulsed laser deposition

International Nuclear Information System (INIS)

Hafez, M A; Mamun, M A; Elmustafa, A A; Elsayed-Ali, H E

2013-01-01

The structural and nanomechanical properties of InN films grown on Si(1 0 0) using femtosecond pulsed laser deposition were studied for different growth conditions. Atomic nitrogen was generated by either thermal cracking or laser-induced breakdown (LIB) of ammonia. Optical emission spectroscopy was conducted on the laser plasma and used to observe atomic nitrogen formation. An indium buffer layer was initially grown on the Si substrate at low temperature. The surface structure and morphology were investigated by in situ reflection high-energy electron diffraction, ex situ atomic force microscopy and x-ray diffraction (XRD). The results show that the initial buffer indium layers were terminated with the In(2 × 1) structure and had a smooth surface. With increased coverage, the growth mode developed from two-dimensional layers to three-dimensional islands. At room temperature (RT), formation of submicrometre islands resulted in mixed crystal structure of In and InN. As the substrate temperature was increased to 250–350 °C, the crystal structure was found to be dominated by fewer In and more InN, with only InN formed at 350 °C. The XRD patterns show that the grown InN films have wurtzite crystal structure. The film hardness near the surface was observed to increase from less than 1 GPa, characteristic of In for the sample grown at RT using the thermal cracker, to a hardness of 11 GPa at 30 nm from surface, characteristic of InN for samples grown at 350 °C by LIB. The hardness at deep indents reaches the hardness of the Si substrate of ∼12 GPa. (paper)

X-ray diffraction study of A- plane non-polar InN epilayer grown by MOCVD

Science.gov (United States)

Moret, Matthieu; Briot, Olivier; Gil, Bernard

2015-03-01

Strong polarisation-induced electric fields in C-plane oriented nitrides semiconductor layers reduce the performance of devices. Eliminating the polarization fields can be achieved by growing nitrides along non polar direction. We have grown non polar A-plane oriented InN on R-plane (1‾102) nitridated sapphire substrate by MOCVD. We have studied the structural anisotropy observed in these layers by analyzing High Resolution XRay Diffraction rocking curve (RC) experiments as a function of the in-plane beam orientation. A-plane InN epilayer have a unique epitaxial relationship on R-Plane sapphire and show a strong structural anisotropy. Full width at half maximum (FWHM) of the InN(11‾20) XRD RC values are contained between 44 and 81 Arcmin. FWHM is smaller when the diffraction occurs along the [0001] and the largest FWHM values, of the (11‾20) RC, are obtained when the diffraction occurs along the [1‾100] in-plane direction. Atomic Force Microscopy imaging revealed morphologies with well organized crystallites. The grains are structured along a unique crystallographic orientation of InN, leading to larger domains in this direction. This structural anisotropy can be, in first approximation, attributed to the difference in the domain sizes observed. XRD reciprocal space mappings (RSM) were performed in asymmetrical configuration on (13‾40) and (2‾202) diffraction plane. RSM are measured with a beam orientation corresponding to a maximal and a minimal width of the (11‾20) Rocking curves, respectively. A simple theoretical model is exposed to interpret the RSM. We concluded that the dominant contribution to the anisotropy is due to the scattering coherence length anisotropy present in our samples.

A Sub-ppm Acetone Gas Sensor for Diabetes Detection Using 10 nm Thick Ultrathin InN FETs

Science.gov (United States)

Kao, Kun-Wei; Hsu, Ming-Che; Chang, Yuh-Hwa; Gwo, Shangjr; Yeh, J. Andrew

2012-01-01

An indium nitride (InN) gas sensor of 10 nm in thickness has achieved detection limit of 0.4 ppm acetone. The sensor has a size of 1 mm by 2.5 mm, while its sensing area is 0.25 mm by 2 mm. Detection of such a low acetone concentration in exhaled breath could enable early diagnosis of diabetes for portable physiological applications. The ultrathin InN epilayer extensively enhances sensing sensitivity due to its strong electron accumulation on roughly 5–10 nm deep layers from the surface. Platinum as catalyst can increase output current signals by 2.5-fold (94 vs. 37.5 μA) as well as reduce response time by 8.4-fold (150 vs. 1,260 s) in comparison with bare InN. More, the effect of 3% oxygen consumption due to breath inhalation and exhalation on 2.4 ppm acetone gas detection was investigated, indicating that such an acetone concentration can be analyzed in air. PMID:22969342

The influence of growth temperature and input V/III ratio on the initial nucleation and material properties of InN on GaN by MOCVD

International Nuclear Information System (INIS)

Wang, H; Jiang, D S; Zhu, J J; Zhao, D G; Liu, Z S; Wang, Y T; Zhang, S M; Yang, H

2009-01-01

The effects of growth temperature and V/III ratio on the InN initial nucleation of islands on the GaN (0 0 0 1) surface were investigated. It is found that InN nuclei density increases with decreasing growth temperature between 375 and 525 °C. At lower growth temperatures, InN thin films take the form of small and closely packed islands with diameters of less than 100 nm, whereas at elevated temperatures the InN islands can grow larger and well separated, approaching an equilibrium hexagonal shape due to enhanced surface diffusion of adatoms. At a given growth temperature of 500 °C, a controllable density and size of separated InN islands can be achieved by adjusting the V/III ratio. The larger islands lead to fewer defects when they are coalesced. Comparatively, the electrical properties of the films grown under higher V/III ratio are improved

Conservation of the Sinclair Inn Museum, and the Painted Room Annapolis Royal, Nova Scotia, Canada

Science.gov (United States)

Shaftel, A.; Ward, J.

2017-08-01

Conservation of the historic 18thC. Sinclair Inn Museum, and of the recently discovered late 18th/early 19thC. unique panoramic wall paintings located in an upstairs room, are co-dependent. This project was carried out with Canadian Conservation Institute (CCI) staff, and Conservator in Private Practice Ann Shaftel. This paper will introduce the Sinclair Inn Museum, outline the CCI murals and building investigations of 2011-15, the mural investigation of 2015-16, which confirmed that the mural extended to all four walls of the function room, now referred to as the Painted Room, and to describe how it has been revealed and conserved to date.

Auger recombination as the dominant nonradiative recombination channel in InN

NARCIS (Netherlands)

Cho, Y.; Lue, X.; Wienold, M.; Ramsteiner, M.; Grahn, H.T.; Brandt, O.

2013-01-01

We investigate the dependence of the photoluminescence intensity of degenerately doped (6×10 17 -to1×10 20 -cm -3 ) InN films on their threading dislocation density and background doping level. The photoluminescence intensity is found to be not determined by the structural quality of the film but by

Golf Tournament Drives in a Win for the Children’s Inn | Poster

Science.gov (United States)

By Carolynne Keenan, Contributing Writer On September 23, golfers took to the Clustered Spires golf course in Frederick, Md., for a cause. The R&W Club Frederick hosted its inaugural golf tournament, with proceeds benefiting the National Institutes of Health (NIH) Children’s Inn.

A Dance Class, a Drag King, & the Pedagogical Possibilities of Performative Hip-Hop: An Interview with Carmen Morrison & Alex U. Inn

Science.gov (United States)

Schönfeldt-Aultman, Scott M.; Morrison, Carmen

2015-01-01

Alex U. Inn is the co-founder and one of the two MCs of the hip-hop drag king group, Momma's Boyz. Momma's Boyz celebrated their tenth anniversary in 2014. Carmen Morrison is the offstage name of Alex U. Inn, though "Carmen" now goes by Alex offstage, as well. Within this interview, the names "Carmen" and "Alex" are…

Optical characterization of free electron concentration in heteroepitaxial InN layers using Fourier transform infrared spectroscopy and a 2 × 2 transfer-matrix algebra

International Nuclear Information System (INIS)

Katsidis, C. C.; Ajagunna, A. O.; Georgakilas, A.

2013-01-01

Fourier Transform Infrared (FTIR) reflectance spectroscopy has been implemented as a non-destructive, non-invasive, tool for the optical characterization of a set of c-plane InN single heteroepitaxial layers spanning a wide range of thicknesses (30–2000 nm). The c-plane (0001) InN epilayers were grown by plasma-assisted molecular beam epitaxy (PAMBE) on GaN(0001) buffer layers which had been grown on Al 2 O 3 (0001) substrates. It is shown that for arbitrary multilayers with homogeneous anisotropic layers having their principal axes coincident with the laboratory coordinates, a 2 × 2 matrix algebra based on a general transfer-matrix method (GTMM) is adequate to interpret their optical response. Analysis of optical reflectance in the far and mid infrared spectral range has been found capable to discriminate between the bulk, the surface and interface contributions of free carriers in the InN epilayers revealing the existence of electron accumulation layers with carrier concentrations in mid 10 19 cm −3 at both the InN surface and the InN/GaN interface. The spectra could be fitted with a three-layer model, determining the different electron concentration and mobility values of the bulk and of the surface and the interface electron accumulation layers in the InN films. The variation of these values with increasing InN thickness could be also sensitively detected by the optical measurements. The comparison between the optically determined drift mobility and the Hall mobility of the thickest sample reveals a value of r H = 1.49 for the Hall factor of InN at a carrier concentration of 1.11 × 10 19 cm −3 at 300°Κ.

«Dallas Buyers Club (2013» clinical research with drugs for the AIDS epidemic 80

Directory of Open Access Journals (Sweden)

Marian de HAAN-BOSCH

2015-07-01

Full Text Available Dallas Buyers Club (2013, inspired by true events, tells the story of Ron Woodroof, a middle?aged elec? trician from Dallas (Texas, who is diagnosed with AIDS in 1985. With few treatment options, he estab? lishes the Dallas Buyers Club in order to provide unapproved drugs to the AIDS community. This results in constant business travels, disputes with the FDA and problems with the law and the IRS. The article analyzes the buyers’ clubs phenomenon in the US, the drugs cited in the film and the clinical trial with zidovudine shown in the movie. The film could be useful as a teaching tool providing an introduction to the AIDS epidemic, clinical research and drug development, bioethics of human research and the agen? cies that regulate drug approval and their availability. Finally, the article presents a possible guideline for the use of the film in a teaching environment.

Psicose e Bates Motel: similaridades na transposição da narrativa do filme para o seriado de televisão

Directory of Open Access Journals (Sweden)

Rafael Jose Bona

2016-12-01

Full Text Available Analisa-se a transposição da narrativa cinematográfica para a televisiva em relação ao filme Psicose (1960, Alfred Hitchcock e o seriado Bates Motel (2013. Foi feito um estudo de elementos a partir da estética, da narrativa e da técnica audiovisual. A pesquisa é de caráter descritiva e analítica, com abordagem qualitativa. Como resultado foi possível obter maior entendimento na transposição de personagens do cinema para a televisão, assim como uma visão crítica a respeito das similaridades das produções audiovisuais.

Effects of GaN capping on the structural and the optical properties of InN nanostructures grown by using MOCVD

International Nuclear Information System (INIS)

Sun, Yuanping; Cho, Yonghoon; Wang, Hui; Wang, Lili; Zhang, Shuming; Yang, Hui

2010-01-01

InN nanostructures with and without GaN capping layers were grown by using metal-organic chemical vapor deposition. Morphological, structural, and optical properties were systematically studied by using atomic force microscopy, X-ray diffraction (XRD) and temperature-dependent photoluminescence (PL). XRD results show that an InGaN structure is formed for the sample with a GaN capping layer, which will reduce the quality and the IR PL emission of the InN. The lower emission peak at ∼0.7 eV was theoretically fitted and assigned as the band edge emission of InN. Temperature-dependent PL shows a good quantum efficiency for the sample without a GaN capping layers; this corresponds to a lower density of dislocations and a small activation energy.

Vertically integrated (Ga, In)N nanostructures for future single photon emitters operating in the telecommunication wavelength range

International Nuclear Information System (INIS)

Winden, A; Mikulics, M; Grützmacher, D; Hardtdegen, H

2013-01-01

Important technological steps are discussed and realized for future room-temperature operation of III-nitride single photon emitters. First, the growth technology of positioned single pyramidal InN nanostructures capped by Mg-doped GaN is presented. The optimization of their optical characteristics towards narrowband emission in the telecommunication wavelength range is demonstrated. In addition, a device concept and technology was developed so that the nanostructures became singularly addressable. It was found that the nanopyramids emit in the telecommunication wavelength range if their size is chosen appropriately. A p-GaN contacting layer was successfully produced as a cap to the InN pyramids and the top p-contact was achievable using an intrinsically conductive polymer PEDOT:PSS, allowing a 25% increase in light transmittance compared to standard Ni/Au contact technology. Single nanopyramids were successfully integrated into a high-frequency device layout. These decisive technology steps provide a promising route to electrically driven and room-temperature operating InN based single photon emitters in the telecommunication wavelength range. (paper)

Growth kinetics and structural perfection of (InN)_1/(GaN)_1_–_2_0 short-period superlattices on +c-GaN template in dynamic atomic layer epitaxy

International Nuclear Information System (INIS)

Kusakabe, Kazuhide; Hashimoto, Naoki; Wang, Ke; Imai, Daichi; Itoi, Takaomi; Yoshikawa, Akihiko

2016-01-01

The growth kinetics and structural perfection of (InN)_1/(GaN)_1_–_2_0 short-period superlattices (SPSs) were investigated with their application to ordered alloys in mind. The SPSs were grown on +c-GaN template at 650 °C by dynamic atomic layer epitaxy in conventional plasma-assisted molecular beam epitaxy. It was found that coherent structured InN/GaN SPSs could be fabricated when the thickness of the GaN barrier was 4 ML or above. Below 3 ML, the formation of SPSs was quite difficult owing to the increased strain in the SPS structure caused by the use of GaN as a template. The effective or average In composition of the (InN)_1/(GaN)_4 SPSs was around 10%, and the corresponding InN coverage in the ∼1 ML-thick InN wells was 50%. It was found that the effective InN coverage in ∼1 ML-thick InN wells could be varied with the growth conditions. In fact, the effective In composition could be increased up to 13.5%, i.e., the corresponding effective InN coverage was about 68%, by improving the capping/freezing speed by increasing the growth rate of the GaN barrier layer.

Quasi-two-dimensional superconductivity in wurtzite-structured InN films

International Nuclear Information System (INIS)

Ling, D.C.; Cheng, J.H.; Lo, Y.Y.; Du, C.H.; Chiu, A.P.; Chang, P.H.; Chang, C.A.

2007-01-01

C-axis oriented InN films with wurtzite structure were grown on sapphire(0001) substrate by MOCVD method. Superconductivity with transition onset temperature T c,onset around 3.5 K has been characterized by magnetotransport measurements in fields up to 9 Tesla for films with carrier concentration in the range of 1 x 10 19 cm -3 to 7 x 10 20 cm -3 . Among them, the film with a nitridation buffer layer has the highest zero-resistance temperature T c0 of 2 K. The normal-state magnetoresistance follows Kohler's rule ΔR/R∝(H/R) 2 , indicating that there is a single species of charge carrier with single scattering time at all points on the Fermi surface. The extrapolated value of zero-temperature upper critical field H c2 ab (0) and H c2 c (0) is estimated to be 5900 G and 2800 G, respectively, giving rise to the anisotropy parameter γ about 2.1. The angular dependence of the upper critical field is in good agreement with the behavior predicted by Lawrence-Doniach model in the two-dimensional (2D) limit strongly suggesting that the InN film is a quasi-2D superconductor. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

PLAN DE MARKETING PARA EL HOTEL CARRIZAL INN

OpenAIRE

Ángel Guillermo Félix Mendoza; Danny Daniel Cobeña López; Lisbeth Alexandra Párraga Muñoz; Lorena Carreño Mendoza

2015-01-01

El objetivo principal de esta investigación fue la elaboración de un plan de marketing para el Hotel Carrizal Inn ubicado en la ciudad de Calceta, provincia de Manabí, Ecuador. Se estructuraron tres fases metodológicas, el diagnóstico situacional, estudio de mercado y plan turístico. En la primera fase se delimitó el área de estudio; además se efectuó un análisis interno y externo, utilizando matrices de diagnóstico como la evaluación de factores internos y externos, matriz de competidores...

Network of vertically c-oriented prismatic InN nanowalls grown on c-GaN/sapphire template by chemical vapor deposition technique

Science.gov (United States)

Barick, B. K.; Saroj, Rajendra Kumar; Prasad, Nivedita; Sutar, D. S.; Dhar, S.

2018-05-01

Networks of vertically c-oriented prism shaped InN nanowalls, are grown on c-GaN/sapphire templates using a CVD technique, where pure indium and ammonia are used as metal and nitrogen precursors. A systematic study of the growth, structural and electronic properties of these samples shows a preferential growth of the islands along [ 1 1 2 bar 0 ] and [0 0 0 1] directions leading to the formation of such a network structure, where the vertically [0 0 0 1] oriented tapered walls are laterally align along one of the three [ 1 1 2 bar 0 ] directions. Inclined facets of these walls are identified as semipolar (1 1 2 bar 2) -planes of wurtzite InN. Onset of absorption for these samples is observed to be higher than the band gap of InN suggesting a high background carrier concentration in this material. Study of the valence band edge through XPS indicates the formation of positive depletion regions below the surface of the side facets [(1 1 2 bar 2) -planes] of the walls. This is in contrast with the observation for c-plane InN epilayers, where electron accumulation is often reported below the top surface.

2nd INNS Conference on Big Data

CERN Document Server

Manolopoulos, Yannis; Iliadis, Lazaros; Roy, Asim; Vellasco, Marley

2017-01-01

The book offers a timely snapshot of neural network technologies as a significant component of big data analytics platforms. It promotes new advances and research directions in efficient and innovative algorithmic approaches to analyzing big data (e.g. deep networks, nature-inspired and brain-inspired algorithms); implementations on different computing platforms (e.g. neuromorphic, graphics processing units (GPUs), clouds, clusters); and big data analytics applications to solve real-world problems (e.g. weather prediction, transportation, energy management). The book, which reports on the second edition of the INNS Conference on Big Data, held on October 23–25, 2016, in Thessaloniki, Greece, depicts an interesting collaborative adventure of neural networks with big data and other learning technologies.

Systems engineering management plan : Dallas Integrated Corridor Management (ICM) demonstration project.

Science.gov (United States)

2010-12-01

The purpose of the Dallas ICM System is to implement a multi-modal operations decision support tool enabled by real-time data pertaining to the : operation of freeways, arterials, and public transit. The system will be shared between information syst...

In-situ cyclic pulse annealing of InN on AlN/Si during IR-lamp-heated MBE growth

Science.gov (United States)

Suzuki, Akira; Bungi, Yu; Araki, Tsutomu; Nanishi, Yasushi; Mori, Yasuaki; Yamamoto, Hiroaki; Harima, Hiroshi

2009-05-01

To improve crystal quality of InN, an in-situ cyclic rapid pulse annealing during growth was carried out using infrared-lamp-heated molecular beam epitaxy. A cycle of 4 min growth of InN at 400 °C and 3 s pulse annealing at a higher temperature was repeated 15 times on AlN on Si substrate. Annealing temperatures were 550, 590, 620, and 660 °C. The back of Si was directly heated by lamp irradiation through a quartz rod. A total InN film thickness was about 200 nm. With increasing annealing temperature up to 620 °C, crystal grain size by scanning electron microscope showed a tendency to increase, while widths of X-ray diffraction rocking curve of (0 0 0 2) reflection and E 2 (high) mode peak of Raman scattering spectra decreased. A peak of In (1 0 1) appeared in X-ray diffraction by annealing higher than 590 °C, and In droplets were found on the surface by annealing at 660 °C.

Minibaaritoiminnan kehittäminen Holiday Inn Helsinki-Vantaa Airportissa

OpenAIRE

Raunio, Reijo

2009-01-01

Tämä tutkimustyyppinen opinnäytetyö käsittelee Restel Oy:n operoiman Holiday Inn Helsinki-Vantaa Airportin minibaaritoiminnan kehittämistä. Työn on tarkoitus toimia hotellin johdon apuvälineenä pohdittaessa toimenpiteitä, joilla voitaisiin tehostaa minibaaritoiminnan tuottoja ja parantaa sen kannattavuutta. Koska kannattavuuden käsitteen avaamiselle syntyy näin ollen olennainen tarve, se saa pääroolin viitekehyksessä. Kannattavuuden osalta käsitellään paitsi sen yleistä määrittelyä myös ...

Strong band edge luminescence from InN films grown on Si substrates by electron cyclotron resonance-assisted molecular beam epitaxy

International Nuclear Information System (INIS)

Yodo, Tokuo; Yona, Hiroaki; Ando, Hironori; Nosei, Daiki; Harada, Yoshiyuki

2002-01-01

We observed strong band edge luminescence at 8.5-200 K from 200-880 nm thick InN films grown on 10 nm thick InN buffer layers on Si(001) and Si(111) substrates by electron cyclotron resonance-assisted molecular beam epitaxy. The InN film on the Si(001) substrate exhibited strong band edge photoluminescence (PL) emission at 1.814 eV at 8.5 K, tentatively assigned as donor to acceptor pair [DAP (α-InN)] emission from wurtzite-InN (α-InN) crystal grains, while those on Si(111) showed other stronger band edge PL emissions at 1.880, 2.081 and 2.156 eV, tentatively assigned as donor bound exciton [D 0 X(α-InN)] from α-InN grains, DAP (β-InN) and D 0 X (β-InN) emissions from zinc blende-InN (β-InN) grains, respectively

Dalla microfisica alla macrofisica

CERN Document Server

Caldirola, Piero

1974-01-01

La scoperta delle leggi che reggono il micromondo, effettuata dai creatori della fisica quantistica, rappresenta, assieme a quella della relatività, il maggior progresso compiuto dalla fisica nel XX secolo. Fino a poco fa però, malgrado i suoi successi, la meccanica quantistica era ancora mal compresa soprattutto nelle sue conseguenze filosofiche, e fonte di dibattiti senza fine. Spiaceva infatti, come spiace ancora, a molti il dover usare due linguaggi del tutto diversi per descrivere il micro- e il macromondo, per cui la fisica quantistica appariva come un incidente, uno stadio provvisorio nel cammino della scienza. Fu però la stessa ricerca a mettere in evidenza l'esistenza di sistemi macroscopici, quali l'elio liquido, i superconduttori, il laser, descrivibili solamente attraverso le leggi quantistiche. Si comprese allora essere queste un ponte gettato fra il micro- e il macromondo. Il libro vuole illustrare queste leggi in maniera non divulgativa ma concettuale, cioè limitando al minimo l'uso del for...

Petrologic and petrophysical evaluation of the Dallas Center Structure, Iowa, for compressed air energy storage in the Mount Simon Sandstone.

Energy Technology Data Exchange (ETDEWEB)

Heath, Jason E.; Bauer, Stephen J.; Broome, Scott Thomas; Dewers, Thomas A.; Rodriguez, Mark A

2013-03-01

The Iowa Stored Energy Plant Agency selected a geologic structure at Dallas Center, Iowa, for evaluation of subsurface compressed air energy storage. The site was rejected due to lower-than-expected and heterogeneous permeability of the target reservoir, lower-than-desired porosity, and small reservoir volume. In an initial feasibility study, permeability and porosity distributions of flow units for the nearby Redfield gas storage field were applied as analogue values for numerical modeling of the Dallas Center Structure. These reservoir data, coupled with an optimistic reservoir volume, produced favorable results. However, it was determined that the Dallas Center Structure cannot be simplified to four zones of high, uniform permeabilities. Updated modeling using field and core data for the site provided unfavorable results for air fill-up. This report presents Sandia National Laboratories petrologic and petrophysical analysis of the Dallas Center Structure that aids in understanding why the site was not suitable for gas storage.

Electrical properties of cubic InN and GaN epitaxial layers as a function of temperature

International Nuclear Information System (INIS)

Fernandez, J.R.L.; Chitta, V.A.; Abramof, E.

2000-01-01

Carrier concentration and mobility were measured for intrinsic cubic InN and GaN, and for Si-doped cubic GaN as a function of temperature. Metallic n-type conductivity was found for the InN, while background p-type conductivity was observed for the intrinsic GaN layer. Doping the cubic GaN with Si two regimes were observed. For low Si-doping concentrations, the samples remain p-type. Increasing the Si-doping level, the background acceptors are compensated and the samples became highly degenerated n-type. From the carrier concentration dependence on temperature, the activation energy of the donor and acceptor levels was determined. Attempts were made to determine the scattering mechanisms responsible for the behavior of the mobility as a function of temperature

Integrated corridor management initiative : demonstration phase evaluation, Dallas air quality test plan.

Science.gov (United States)

2012-08-01

This report presents the test plan for conducting the Air Quality Analysis for the United States : Department of Transportation (U.S. DOT) evaluation of the Dallas U.S. 75 Integrated Corridor : Management (ICM) Initiative Demonstration. The ICM proje...

76 FR 33333 - Use of Small Area Fair Market Rents for Project Base Vouchers in the Dallas TX Metropolitan Area

Science.gov (United States)

2011-06-08

... DEPARTMENT OF HOUSING AND URBAN DEVELOPMENT [Docket No. FR-5525-N-01] Use of Small Area Fair Market Rents for Project Base Vouchers in the Dallas TX Metropolitan Area AGENCY: Office of the Assistant... Small Area Fair Market Rents (SAFMRs) for Project-Based Vouchers (PBVs) located in the Dallas, TX...

An Analysis of Open-Ended Online Reviews about Bed and Breakfast and Inns in Portugal

Directory of Open Access Journals (Sweden)

Sara Evans Machado dos Santos

2014-03-01

Full Text Available Researches about User-Generated Content (UGC have gained attention in the fields of Tourism and Hospitality in the last years. This study focus on online reviews about alternative accommodations – B&Bs and Inns. The development of this work was realized applying inductive methods and using an exploratory approach. We collected a sample of 450 online reviews and analyzed them segment by segment, making a total of 4621 segments. We used the Appraisal Theory to assess what attitudes online reviewers are expressing about B&Bs and Inns in Lisbon. We verified that positive appreciation is the most frequent attitude while expressions of affect and judgment are more rare. This study contributes to the academy as it brings a new parameter of analysis of UGC using the Appraisal Theory in the field of Hospitality.

Kinetics of self-assembled InN quantum dots grown on Si (111) by plasma-assisted MBE

International Nuclear Information System (INIS)

Kumar, Mahesh; Roul, Basanta; Bhat, Thirumaleshwara N.; Rajpalke, Mohana K.; Sinha, Neeraj; Kalghatgi, A. T.; Krupanidhi, S. B.

2011-01-01

One of the scientific challenges of growing InN quantum dots (QDs), using Molecular beam epitaxy (MBE), is to understand the fundamental processes that control the morphology and distribution of QDs. A systematic manipulation of the morphology, optical emission, and structural properties of InN/Si (111) QDs is demonstrated by changing the growth kinetics parameters such as flux rate and growth time. Due to the large lattice mismatch, between InN and Si (∼8%), the dots formed from the Strannski–Krastanow (S–K) growth mode are dislocated. Despite the variations in strain (residual) and the shape, both the dot size and pair separation distribution show the scaling behavior. We observed that the distribution of dot sizes, for samples grown under varying conditions, follow the scaling function.

Local lattice environment of indium in GaN, AlN, and InN; Lokale Gitterumgebung von Indium in GaN, AlN und InN

Energy Technology Data Exchange (ETDEWEB)

Penner, J

2007-12-20

After an introduction to the physical properties of the nitrides, their preparation, and the state of studies on the implantation in the nitrides the experimental method (PAC) applied in this thesis and the data analysis are presented. The next chapter describes then the applied materials and the sample preparation. The following chapters contain the PAC measurements on the annealing behaviout of GaN, AlN, and InN after the implantation as well as dose- and temperature dependent PAC studies. Finally the most important results are summarized.

Hydrogeochemical and stream sediment reconnaissance basic data for Dallas NTMS Quadrangle, Texas

International Nuclear Information System (INIS)

1981-01-01

Results of a reconnaissance geochemical survey of the Dallas Quadrangle, Texas are reported. Field and laboratory data are presented for 284 groundwater and 545 stream sediment samples. Statistical and areal distribution plots of uranium and possible uranium-related variables are displayed. A generalized geologic map of the survey area is provided. Groundwater produced from the Navarro Group, Neylandville Formation, Marlbrook Marl, and the Glen Rose and Twin Mountains Formations exhibit anomalous uranium (> 9.05 ppB) and specific conductance (> 1871 μmhos/cm) values. The anomalies represent a southern extension of a similar trend observed in the Sherman Quadrangle, K/UR-110. Stream sediments representing the Eagle Ford Group and Woodbine Formation exhibit the highest concentrations of total and hot-acid-soluble uranium and thorium of samples collected in the Dallas Quadrangle. The U/TU value indicates that > 80% of this uranium is present in a soluble form

Structural and magnetic properties of Cr and Mn doped InN

International Nuclear Information System (INIS)

Ney, A.; Rajaram, R.; Arenholz, E.; Harris, J.S.; Samant, M.; Farrow, R.F.C.; Parkin, S.S.P.

2006-01-01

We present a detailed magnetic characterization of Cr and Mn doped InN films be means of superconducting quantum interference device magnetometry and X-ray magnetic circular dichroism. The InN:Cr films exhibit ferromagnetic behavior up to 300 K in a doping region from 2% to 8% without detectable phase segregation. The easy axis of magnetization is found to be in the film plane. On the contrary, Mn-doped films show signatures of phase segregation and paramagnetic behavior

Freight Advanced Traveler Information System (FRATIS) - Dallas-Fort Worth (DFW) prototype : final report.

Science.gov (United States)

This is the Final Report for the FRATIS Dallas-Fort Worth DFW prototype system. The FRATIS prototype in : DFW consisted of the following components: optimization algorithm, terminal wait time, route specific : navigation/traffic/weather, and advanced...

Integrated corridor management initiative : demonstration phase evaluation - Dallas technical capability analysis test plan.

Science.gov (United States)

This report presents the test plan for conducting the Technical Capability Analysis for the United States : Department of Transportation (U.S. DOT) evaluation of the Dallas U.S. 75 Integrated Corridor : Management (ICM) Initiative Demonstration. The ...

Real-time growth study of plasma assisted atomic layer epitaxy of InN films by synchrotron x-ray methods

Energy Technology Data Exchange (ETDEWEB)

Nepal, Neeraj [U.S. Naval Research Laboratory, 4555 Overlook Avenue SW, Washington, DC 20375; Anderson, Virginia R. [American Society for Engineering Education, 1818 N Street NW, Washington, DC 20036; Johnson, Scooter D. [U.S. Naval Research Laboratory, 4555 Overlook Avenue SW, Washington, DC 20375; Downey, Brian P. [U.S. Naval Research Laboratory, 4555 Overlook Avenue SW, Washington, DC 20375; Meyer, David J. [U.S. Naval Research Laboratory, 4555 Overlook Avenue SW, Washington, DC 20375; DeMasi, Alexander [Physics Department, Boston University, 590 Commonwealth Avenue, Boston, Massachusetts 02215; Robinson, Zachary R. [Department of Physics, SUNY College at Brockport, 350 New Campus Dr, Brockport, New York 14420; Ludwig, Karl F. [Physics Department, Boston University, 590 Commonwealth Avenue, Boston, Massachusetts 02215; Eddy, Charles R. [U.S. Naval Research Laboratory, 4555 Overlook Avenue SW, Washington, DC 20375

2017-03-13

The temporal evolution of high quality indium nitride (InN) growth by plasma-assisted atomic layer epitaxy (ALEp) on a-plane sapphire at 200 and 248 °C was probed by synchrotron x-ray methods. The growth was carried out in a thin film growth facility installed at beamline X21 of the National Synchrotron Light Source at Brookhaven National Laboratory and at beamline G3 of the Cornell High Energy Synchrotron Source, Cornell University. Measurements of grazing incidence small angle x-ray scattering (GISAXS) during the initial cycles of growth revealed a broadening and scattering near the diffuse specular rod and the development of scattering intensities due to half unit cell thick nucleation islands in the Yoneda wing with correlation length scale of 7.1 and 8.2 nm, at growth temperatures (Tg) of 200 and 248 °C, respectively. At about 1.1 nm (two unit cells) of growth thickness nucleation islands coarsen, grow, and the intensity of correlated scattering peak increased at the correlation length scale of 8.0 and 8.7 nm for Tg = 200 and 248 °C, respectively. The correlated peaks at both growth temperatures can be fitted with a single peak Lorentzian function, which support single mode growth. Post-growth in situ x-ray reflectivity measurements indicate a growth rate of ~0.36 Å/cycle consistent with the growth rate previously reported for self-limited InN growth in a commercial ALEp reactor. Consistent with the in situ GISAXS study, ex situ atomic force microscopy power spectral density measurements also indicate single mode growth. Electrical characterization of the resulting film revealed an electron mobility of 50 cm2/V s for a 5.6 nm thick InN film on a-plane sapphire, which is higher than the previously reported mobility of much thicker InN films grown at higher temperature by molecular beam epitaxy directly on sapphire. These early results indicated that in situ synchrotron x-ray study of the epitaxial growth kinetics of InN films is a very powerful method to

HOUSE DUST MITE CONTAMINATION IN HOTELS AND INNS IN BANDAR ABBAS, SOUTH OF IRAN

Directory of Open Access Journals (Sweden)

M. Soleimani, J. Rafinejad

2008-07-01

Full Text Available House dust mites have been shown to be strongly associated with allergic respiratory diseases such as, bronchial asthma, rhinitis and atopic dermatitis in the world. The climatic conditions of Bandar-Abbas, which is located in a coastal area and has a humid subtropical climate, provide a suitable place to proliferate mites. The aim of this study was to determine the contamination rate and analyze the house dust mite fauna in hotels and inns in Bandar-Abbas that had not been investigated previously. In this study 6 hotels and 6 inns were selected randomly in six areas of Bandar-Abbas. Two dust samples were collected from each place with a vacuum cleaner. One square meter of carpets and mattresses were vacuumed for a period of 1 min. Then the samples were cleared in lactic acid and then mites were mounted in Hoyer's medium for study and identification. A total of 2644 mites were collected and identified. The major mite family was Pyroglyphidae (98%. Dermatophagoides pteronyssinus was the most frequent and most numerous species recorded, occurring in 91% of samples examined and forming 88% of the Pyroglyphidae and 86% of the total mite populations. The family Cheyletidae was less commonly found with Cheyletus malaccensis (2%. Most of the mites were isolated from the carpets (57.5%, and a smaller number from mattresses (42.5%. Mites were present in 96% of the dust samples. Results revealed that all inns and 83% of hotels were contaminated by more than one species of mite and 34% of them had a population of more than 100 mites /g dust. This rate of contamination can be a major risk factor in asthma and other respiratory allergic diseases

75 FR 30852 - Hydroelectric Power Development at Ridgway Dam, Dallas Creek Project, Colorado

Science.gov (United States)

2010-06-02

... associated with the Dallas Creek Project; and the anticipated return on investment. If there are additional... entity to develop hydroelectric power at Ridgway Dam, and power purchasing and/or marketing... and interested entities to discuss Western's potential marketing of hydropower. FOR FURTHER...

High-quality InN films on MgO (100) substrates: The key role of 30° in-plane rotation

International Nuclear Information System (INIS)

Compeán García, V. D.; López Luna, E.; Rodríguez, A. G.; Vidal, M. A.; Orozco Hinostroza, I. E.; Escobosa Echavarría, A.

2014-01-01

High crystalline layers of InN were grown on MgO(100) substrates by gas source molecular beam epitaxy. Good quality films were obtained by means of an in-plane rotation process induced by the annealing of an InN buffer layer to minimize the misfit between InN and MgO. In situ reflection high-energy electron diffraction showed linear streaky patterns along the [011 ¯ 0] azimuth and a superimposed diffraction along the [112 ¯ 0] azimuth, which correspond to a 30° α-InN film rotation. This rotation reduces the mismatch at the MgO/InN interface from 19.5% to less than 3.5%, increasing the structural quality, which was analyzed by high-resolution X-ray diffraction and Raman spectroscopy. Only the (0002) c plane diffraction of α-InN was observed and was centered at 2θ = 31.4°. Raman spectroscopy showed two modes corresponding to the hexagonal phase: E1(LO) at 591 cm −1 and E2(high) at 488 cm −1 . Hall effect measurements showed a carrier density of 9 × 10 18  cm −3 and an electron Hall mobility of 340 cm 2 /(V s) for a film thickness of 140 nm

A trade-off relation between tilt and twist angle fluctuations in InN grown by RF-MBE

International Nuclear Information System (INIS)

Hashimoto, A.; Iwao, K.; Yamamoto, A.

2008-01-01

In the InN growth on sapphire substrates, it is difficult to control both of tilt and twist angle fluctuations at same time. It is necessary to understand initial growth stage such as the role of nitridation process to improve the mosaicity. Low-temperature nitridation technique brings the drastically improvement of the tilt angle fluctuation, although the twist angle fluctuation becomes worse. Such experimental results strongly indicate that there is some trade-off relation between the tilt and the twist angle fluctuations as a function of the nitridation condition such as the nitridation time. In this paper, we discuss about such trade-off relation in the direct growth of InN on the nitridation sapphire substrates and also propose a simple model of initial nitridation process to explain it. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Il romanzo paterno in adolescenza: Laio dimenticato dalla psicoanalisi

Directory of Open Access Journals (Sweden)

Arturo Casoni

2015-12-01

Full Text Available Il Complesso di Edipo ha ricevuto dal movimento psicoanalitico, sempre o quasi, una declinazione che sceglieva come attori principali il figlio maschio e la madre, con l’intervento successivo del padre. Si è così costruita una sorta di mitologia eterosessuale di quel triangolo, lasciando aperto il lato che collega il figlio al padre. Si tenta qui di saldare la parte mancante, a partire dalla narrazione del mito e arrivando alle dinamiche psichiche che caratterizzano le famiglie contemporanee, con particolare attenzione alla clinica dell’adolescenza contemporanea. 

Dallas Smythe Today - The Audience Commodity, the Digital Labour Debate, Marxist Political Economy and Critical Theory.

Directory of Open Access Journals (Sweden)

Christian Fuchs

2012-09-01

Full Text Available Due to the global capitalist crisis, neoliberalism and the logic of commodification of everything have suffered cracks, fissures and holes. There is a return of the interest in Marx, which requires us to think about the role of Marxism in Media and Communication Studies. This paper contributes to this task by discussing some foundations of contemporary Marxist media and communication studies, including a focus on the renewed interest in Dallas Smythe’s audience commodity category as part of the digital labour debate. Dallas Smythe reminds us of the importance of engagement with Marx’s works for studying the media in capitalism critically. Both Critical Theory and Critical Political Economy of the Media and Communication have been criticized for being one-sided. Such interpretations are mainly based on selective readings. They ignore that in both approaches there has been with different weightings a focus on aspects of media commodification, audiences, ideology and alternatives. Critical Theory and Critical Political Economy are complementary and should be combined in Critical Media and Communication Studies today. Dallas Smythe’s notion of the audience commodity has gained new relevance in the debate about corporate Internet services’ exploitation of digital labour. The exploitation of digital labour involves processes of coercion, alienation and appropriation.

Proposal and achievement of novel structure InN/GaN multiple quantum wells consisting of 1 ML and fractional monolayer InN wells inserted in GaN matrix

International Nuclear Information System (INIS)

Yoshikawa, A.; Che, S. B.; Yamaguchi, W.; Saito, H.; Wang, X. Q.; Ishitani, Y.; Hwang, E. S.

2007-01-01

The authors propose and demonstrate the fabrication of InN/GaN multiple quantum well (MQW) consisting of 1 ML and fractional monolayer InN well insertion in GaN matrix under In-polarity growth regime. Since the critical thickness of InN epitaxy on GaN is about 1 ML and the growth temperature for 1 ML InN insertion can be remarkably higher, the proposed MQW structure can avoid/reduce generation of misfit dislocation, resulting in higher quality MQW-structure nature in principle than former InN-based MQWs. The proposed InN/GaN MQWs are potentially applicable to room temperature operating excitonic devices working in short-wavelength visible colors

Enhanced light scattering of the forbidden longitudinal optical phonon mode studied by micro-Raman spectroscopy on single InN nanowires

International Nuclear Information System (INIS)

Schaefer-Nolte, E O; Stoica, T; Gotschke, T; Limbach, F A; Gruetzmacher, D; Calarco, R; Sutter, E; Sutter, P

2010-01-01

In the literature, there are controversies on the interpretation of the appearance in InN Raman spectra of a strong scattering peak in the energy region of the unscreened longitudinal optical (LO) phonons, although a shift caused by the phonon-plasmon interaction is expected for the high conductance observed in this material. Most measurements on light scattering are performed on ensembles of InN nanowires (NWs). However, it is important to investigate the behavior of individual nanowires and here we report on micro-Raman measurements on single nanowires. When changing the polarization direction of the incident light from parallel to perpendicular to the wire, the expected reduction of the Raman scattering was observed for transversal optical (TO) and E 2 phonon scattering modes, while a strong symmetry-forbidden LO mode was observed independently on the laser polarization direction. Single Mg- and Si-doped crystalline InN nanowires were also investigated. Magnesium doping results in a sharpening of the Raman peaks, while silicon doping leads to an asymmetric broadening of the LO peak. The results can be explained based on the influence of the high electron concentration with a strong contribution of the surface accumulation layer and the associated internal electric field.

Enhanced Light Scattering of the Forbidden longitudinal Optical Phonon Mode Studied by Micro-Raman Spectroscopy on Single InN nanowires

International Nuclear Information System (INIS)

Sutter, E.; Schafer-Nolte, E.O.; Stoica, T.; Gotschke, T.; Limbach, F.A.; Sutter, P.; Grutzmacher, D.; Calarco, R.

2010-01-01

In the literature, there are controversies on the interpretation of the appearance in InN Raman spectra of a strong scattering peak in the energy region of the unscreened longitudinal optical (LO) phonons, although a shift caused by the phonon-plasmon interaction is expected for the high conductance observed in this material. Most measurements on light scattering are performed on ensembles of InN nanowires (NWs). However, it is important to investigate the behavior of individual nanowires and here we report on micro-Raman measurements on single nanowires. When changing the polarization direction of the incident light from parallel to perpendicular to the wire, the expected reduction of the Raman scattering was observed for transversal optical (TO) and E2 phonon scattering modes, while a strong symmetry-forbidden LO mode was observed independently on the laser polarization direction. Single Mg- and Si-doped crystalline InN nanowires were also investigated. Magnesium doping results in a sharpening of the Raman peaks, while silicon doping leads to an asymmetric broadening of the LO peak. The results can be explained based on the influence of the high electron concentration with a strong contribution of the surface accumulation layer and the associated internal electric field.

Enhanced light scattering of the forbidden longitudinal optical phonon mode studied by micro-Raman spectroscopy on single InN nanowires.

Science.gov (United States)

Schäfer-Nolte, E O; Stoica, T; Gotschke, T; Limbach, F A; Sutter, E; Sutter, P; Grützmacher, D; Calarco, R

2010-08-06

In the literature, there are controversies on the interpretation of the appearance in InN Raman spectra of a strong scattering peak in the energy region of the unscreened longitudinal optical (LO) phonons, although a shift caused by the phonon-plasmon interaction is expected for the high conductance observed in this material. Most measurements on light scattering are performed on ensembles of InN nanowires (NWs). However, it is important to investigate the behavior of individual nanowires and here we report on micro-Raman measurements on single nanowires. When changing the polarization direction of the incident light from parallel to perpendicular to the wire, the expected reduction of the Raman scattering was observed for transversal optical (TO) and E(2) phonon scattering modes, while a strong symmetry-forbidden LO mode was observed independently on the laser polarization direction. Single Mg- and Si-doped crystalline InN nanowires were also investigated. Magnesium doping results in a sharpening of the Raman peaks, while silicon doping leads to an asymmetric broadening of the LO peak. The results can be explained based on the influence of the high electron concentration with a strong contribution of the surface accumulation layer and the associated internal electric field.

High-quality InN films on MgO (100) substrates: The key role of 30° in-plane rotation

Energy Technology Data Exchange (ETDEWEB)

Compeán García, V. D.; López Luna, E.; Rodríguez, A. G.; Vidal, M. A. [Coordinación para la Innovación y Aplicación de la Ciencia y Tecnología (CIACyT), Universidad Autónoma de San Luis Potosí (UASLP), Álvaro Obregón 64, 78000 San Luis Potosí (Mexico); Orozco Hinostroza, I. E. [Instituto Potosino de Investigación Científica y Tecnológica, Camino a la Presa San José 2055, Col. Lomas 4a Sección, 78216 San Luis Potosí (Mexico); Escobosa Echavarría, A. [Electric Engineering Department, Centro de Investigación y Estudios Avanzados del IPN, Apartado Postal 14-740, 07000 México D.F. (Mexico)

2014-05-12

High crystalline layers of InN were grown on MgO(100) substrates by gas source molecular beam epitaxy. Good quality films were obtained by means of an in-plane rotation process induced by the annealing of an InN buffer layer to minimize the misfit between InN and MgO. In situ reflection high-energy electron diffraction showed linear streaky patterns along the [011{sup ¯}0] azimuth and a superimposed diffraction along the [112{sup ¯}0] azimuth, which correspond to a 30° α-InN film rotation. This rotation reduces the mismatch at the MgO/InN interface from 19.5% to less than 3.5%, increasing the structural quality, which was analyzed by high-resolution X-ray diffraction and Raman spectroscopy. Only the (0002) c plane diffraction of α-InN was observed and was centered at 2θ = 31.4°. Raman spectroscopy showed two modes corresponding to the hexagonal phase: E1(LO) at 591 cm{sup −1} and E2(high) at 488 cm{sup −1}. Hall effect measurements showed a carrier density of 9 × 10{sup 18} cm{sup −3} and an electron Hall mobility of 340 cm{sup 2}/(V s) for a film thickness of 140 nm.

Freight Advanced Traveler Information System (FRATIS) - Dallas-Fort Worth : as-built system architecture and design.

Science.gov (United States)

This document describes the As-Built System Architecture and Design for the FRATIS Dallas-Fort Worth : DFW prototype system. The FRATIS prototype in DFW consisted of the following components: : optimization algorithm, terminal wait time, route specif...

R&W Club Frederick Hosts Second Annual Golf Tourney for The Children’s Inn | Poster

Science.gov (United States)

By Carolynne Keenan, Contributing Writer On Sept. 8, more than 40 NCI at Frederick and Leidos Biomedical Research employees, along with family and friends, swapped work clothes for golf gear at Maryland National Golf Club in Middletown. The golfers didn’t just play for fun; they participated in the second annual R&W Club Frederick Golf Tournament to support The Children’s Inn

Theoretical investigation on structural stability of InN thin films on 3C-SiC(0 0 1)

International Nuclear Information System (INIS)

Ito, Takumi; Akiyama, Toru; Nakamura, Kohji; Ito, Tomonori

2008-01-01

The structural stability of InN thin films on 3C-SiC(0 0 1) substrate is systematically investigated based on an empirical interatomic potential, which incorporates electrostatic energy due to covalent bond charges and ionic charges. The calculated energy differences among coherently grown 3C-InN(0 0 1), 3C-InN(0 0 1) with misfit dislocations (MDs), and 2H-InN(0 0 0 1) imply that the coherently grown 3C-InN(0 0 1) is stable when the film thickness is less than 7 monolayers (MLs) while 2H-InN(0 0 0 1) is stabilized for the thickness beyond 8 MLs. This is because InN layers in 2H-InN(0 0 0 1) are fully relaxed by one MD. The analysis of atomic configuration at the 3C-InN(0 0 1)/3C-SiC(0 0 1) interfaces reveals that the coordination number of interfacial atoms is quite different from that in the bulk region. Thus, 3C-InN(0 0 1) with MDs on 3C-SiC(0 0 1) is always metastable over entire range of film thickness, consistent with the successful fabrication of 2H-InN(0 0 0 1) on 3C-SiC(0 0 1) by the molecular beam epitaxy. These results suggest that the mismatch in atomic arrangements at the interface crucially affects the structural stability of InN thin films on 3C-SiC(0 0 1) substrate

Local lattice environment of indium in GaN, AlN, and InN

International Nuclear Information System (INIS)

Penner, J.

2007-01-01

After an introduction to the physical properties of the nitrides, their preparation, and the state of studies on the implantation in the nitrides the experimental method (PAC) applied in this thesis and the data analysis are presented. The next chapter describes then the applied materials and the sample preparation. The following chapters contain the PAC measurements on the annealing behaviout of GaN, AlN, and InN after the implantation as well as dose- and temperature dependent PAC studies. Finally the most important results are summarized

Determination of the Mg occupation site in MOCVD- and MBE-grown Mg-doped InN using X-ray absorption fine-structure measurements

Energy Technology Data Exchange (ETDEWEB)

Miyajima, Takao; Uemura, Shigeaki; Kudo, Yoshihiro [Materials Laboratories, Sony Corporation, Atsugi, Kanagawa (Japan); Kitajima, Yoshinori [Photon Factory, High Energy Accelerator Research Organization, Tsukuba, Ibaraki (Japan); Yamamoto, Akio [Graduate School of Engineering, University of Fukui, Fukui (Japan); Muto, Daisuke; Nanishi, Yasushi [Department of Photonics, Ritsumeikan University, 1-1-1 Noji-Higashi, Kusatsu, Shiga 525-8577 (Japan)

2008-07-01

We analyzed the atomic structure around Mg atoms in MOCVD- and MBE-grown Mg-doped InN using Mg K-edge X-ray absorption fine-structure (XAFS) measurements. Our experimental data closely fit to the simulated data in which Mg atoms occupy the substitutional sites of In atoms. From this result, we conclude that Mg atoms essentially occupy not N atoms sites but In atoms sites, meaning that Mg atoms can act as acceptors in InN. We believe that observations of p-type conductivity are prevented by problems such as carrier compensation and electron accumulation at the surface. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Disciplinary Practices in Dallas Contrasted with School Systems with Rules Against Violence Against Children.

Science.gov (United States)

Hagebak, Robert

Corporal punishment and its implications are discussed in this speech in Dallas, where corporal punishment is officially sanctioned as a method of school discipline, and in many other parts of the country, the prevailing opinion is that corporal punishment is necessary, effective and harmless. But the effectiveness of such punishment is dubious…

Valence-band discontinuities of wurtzite GaN, AlN, and InN heterojunctions measured by x-ray photoemission spectroscopy

International Nuclear Information System (INIS)

Martin, G.; Botchkarev, A.; Rockett, A.; Morkoc, H.

1996-01-01

The valence-band discontinuities at various wurtzite GaN, AlN, and InN heterojunctions were measured by means of x-ray photoemission spectroscopy. A significant forward endash backward asymmetry was observed in the InN/GaN endash GaN/InN and InN/AlN endash AlN/InN heterojunctions. The asymmetry was understood as a piezoelectric strain effect. We report the valence band discontinuities for InN/GaN=1.05±0.25 eV, GaN/AlN=0.70±0.24 eV, and InN/AlN=1.81±0.20 eV, all in the standard type I lineup. These values obey transitivity to within the experimental accuracy. Tables of photoemission core level binding energies are reported for wurtzite GaN, AlN, and InN. copyright 1996 American Institute of Physics

Influences of residual oxygen impurities, cubic indium oxide grains and indium oxy-nitride alloy grains in hexagonal InN crystalline films grown on Si(111) substrates by electron cyclotron resonance plasma-assisted molecular beam epitaxy

International Nuclear Information System (INIS)

Yodo, T.; Nakamura, T.; Kouyama, T.; Harada, Y.

2005-01-01

We investigated the influences of residual oxygen (O) impurities, cubic indium oxide (β-In 2 O 3 ) grains and indium oxy-nitride (InON) alloy grains in 200 nm-thick hexagonal (α)-InN crystalline films grown on Si(111) substrates by electron cyclotron resonance plasma-assisted molecular beam epitaxy. Although β-In 2 O 3 grains with wide band-gap energy were formed in In film by N 2 annealing, they were not easily formed in N 2 -annealed InN films. Even if they were not detected in N 2 -annealed InN films, the as-grown films still contained residual O impurities with concentrations of less than 0.5% ([O]≤0.5%). Although [O]∝1% could be estimated by investigating In 2 O 3 grains formed in N 2 -annealed InN films, [O]≤0.5% could not be measured by it. However, we found that they can be qualitatively measured by investigating In 2 O 3 grains formed by H 2 annealing with higher reactivity with InN and O 2 , using X-ray diffraction and PL spectroscopy. In this paper, we discuss the formation mechanism of InON alloy grains in InN films. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Photoluminescence and Raman spectroscopy of MBE-grown InN nanocolumns

International Nuclear Information System (INIS)

Segura-Ruiz, J.; Cantarero, A.; Garro, N.; Denker, C.; Werner, F.; Malindretos, J.; Rizzi, A.

2008-01-01

InN nanocolumns grown under different conditions by plasma-assisted molecular beam epitaxy on p-Si (111) substrates are studied by micro-Raman and photoluminescence (PL) spectroscopies. The nanocolumns are free of strain and have an improved crystal quality as shown by the frequency and linewidth of the nonpolar E 2 h mode. Uncoupled polar modes coexist with a couple LO phonon-plasmon mode and are sensitive to the nanocolumn morphology. Variations in the growth conditions also modify the PL spectra significantly. An increase in the PL energy also involves a reduction of the integrated intensity and an increase of the PL linewidth. This overall phenomenology highlights the role of the surface accumulation layer in these nanostructures. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Photoluminescence and Raman spectroscopy of MBE-grown InN nanocolumns

Energy Technology Data Exchange (ETDEWEB)

Segura-Ruiz, J.; Cantarero, A. [Materials Science Institute, University of Valencia, PO Box 22085, 46071 Valencia (Spain); Garro, N. [Materials Science Institute, University of Valencia, PO Box 22085, 46071 Valencia (Spain); Fundacio General de la Universitat de Valencia, University of Valencia, PO Box 22085, 46071 Valencia (Spain); Denker, C.; Werner, F.; Malindretos, J.; Rizzi, A. [IV. Physikalisches Institut, Georg-August Universitaet Goettingen (Germany)

2008-07-01

InN nanocolumns grown under different conditions by plasma-assisted molecular beam epitaxy on p-Si (111) substrates are studied by micro-Raman and photoluminescence (PL) spectroscopies. The nanocolumns are free of strain and have an improved crystal quality as shown by the frequency and linewidth of the nonpolar E{sub 2}{sup h} mode. Uncoupled polar modes coexist with a couple LO phonon-plasmon mode and are sensitive to the nanocolumn morphology. Variations in the growth conditions also modify the PL spectra significantly. An increase in the PL energy also involves a reduction of the integrated intensity and an increase of the PL linewidth. This overall phenomenology highlights the role of the surface accumulation layer in these nanostructures. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Geo-social and health disparities among persons with disabilities living in Monterrey, Nuevo Leon and Dallas, Texas.

Science.gov (United States)

Nikolova, Silviya P; Small, Eusebius; Campillo, Claudia

2015-07-01

In low and high income countries alike, disability exacerbates social, economic, and health disparities, in spite of their differences. This study seeks to identify factors that predict the circumstances people with disabilities face, including poverty. A cross-sectional study design was employed using census track level data for the cities of Monterrey, Nuevo Leon, and Dallas, Texas, from Mexico 2010 and USA 2000 census data collections. Two methods, spatial autocorrelation and geographically weighted regression were used to identify spatial patterns of disability and to explore the relation between disability and context-specific socio-demographic factors. Results indicated that people with disabilities living below the poverty line experience high segregation levels in the semi-central zones of Dallas. In Monterrey, people with disabilities clustered in central areas of the city. A Geographically Weighted Regression (GWR) from both data analyses reported high goodness of fit (R ≥ 0.8 for Dallas data and R ≥ 0.7 for Monterrey data, respectively) and predictability of disability prevalence when social disadvantage factors such as unemployment, housing insecurity, household living conditions, and lack of education were present. The divergent and sometimes conflicting trends in practices and policies addressing disability in low and high income environments renders a reexamination of the framework of disability. An understanding of local characteristics joins a grounded socio-cultural understanding of the various contexts that shape location-based social networks and political decisions in providing such an analysis. Copyright © 2015 Elsevier Inc. All rights reserved.

Girolamo Murari Dalla Corte e il suo poema Pietro il Grande, Imperadore I ed autocrata di tutte le Russie

Directory of Open Access Journals (Sweden)

Marialuisa Ferrazzi

2011-01-01

Full Text Available Marialuisa FerrazziGirolamo Murari Dalla Corte and his poem Pietro il Grande, Imperadore I ed autocrata di tutte le RussieThis study focuses on Pietro il Grande, Imperadore I ed autocrata di tutte le Russie. Canti XII in ottava rima, a poem by the Mantuan Count, Girolamo Murari Dalla Corte. The work, which examines the conflict between Peter the Great and Charles XII of Sweden, was first published in Verona in 1803. 1814 saw the issue of a second edition, in which the author – who dedicated his work to the then reigning tsar, Alexander I – attempted to match the ideological perspective of the account to the changes occurring in the international political situation after the demise of Napoleon’s power. While presenting the historical and stylistic-structural aspects of the poem, the article also considers the relationship established with the Russian world by certain sectors of the Italian intelligencija, in particular by Venetian publishing houses, in the last decades of the 18th century. On the basis of Murari Dalla Corte’s papers, the last part of the article pieces together the sadly unsuccessful attempts made by the writer over a period of 20 years to obtain official recognition of the dedication of his poem from the Russian Court.

The Dallas Pavilion: Contemporary Art and Urban Identity

Directory of Open Access Journals (Sweden)

Jaspar Joseph-Lester

2014-02-01

Full Text Available In the following statement, Jaspar Joseph-Lester and Michael Corris lay out the intentions of their project for the Dallas Pavilion at the 55th Venice Biennale in 2013. By contrast with the national pavilions for which the Biennale is renowned, this pavilion represented a city, and was published in the form of a book rather than temporarily staged on the interior of a building. Available to visitors from a stall placed just outside the American pavilion in the Giardini, this little book is a curated selection of works and texts, intervening within the Biennale’s official structure of curated national pavilions. It colourfully surveys the expansive art world of Dallas’ artists, critics, curators, collectors, galleries, museums and educators, while raising questions about contemporary urban identity vis-à-vis an aging architectural apparatus such as Venice’s international art exposition.

Effect of gossypol on survival and reproduction of the zoophytophagous stinkbug Podisus nigrispinus (Dallas

Directory of Open Access Journals (Sweden)

Walter S. Evangelista Junior

2011-06-01

Full Text Available Effect of gossypol on survival and reproduction of the zoophytophagous stinkbug Podisus nigrispinus (Dallas. Gossypol is a sesquiterpene aldehyde found in cotton plants conferring resistance against herbivory. Although the effect of this sesquiterpenoid on insect pests of cotton is known, the interaction of this compound with zoophytophagous predators such as Podisus nigrispinus (Dallas (Hemiptera, Pentatomidae has not been studied so far. Thus, the objective of this study was to evaluate the effect of the purified gossypol on nymphs and adults of P. nigrispinus. Nymphs and adults of this predator were fed on Tenebrio molitor pupae and supplemented with solutions of gossypol at concentrations of 0.00, 0.05, 0.10, and 0.20% (w/v during the nymphal and adult stages or, only during the adult stage of P. nigrispinus. The nymphal stage of the predator was, on average, two days longer when suplemmented with gossypol. Emerged adults had lower fecundity and egg hatching, especially at the highest gossypol concentration (0.20% ingested during the nymphal and adult stages. However, this predator was not affected when it ingested the compound only during the adult stage. P. nigrispinus can have delayed nymphal development and lower reproductive performance when ingesting the gossypol during the nymphal and adult stages, but only at higher concentrations of gossypol than that produced by cotton plants.Efeito do gossipol na sobrevivência e reprodução do percevejo zoofitófago Podisus nigrispinus (Dallas. O gossipol é um aldeído sesquiterpeno produzido pelo algodoeiro que confere resistência contra a herbivoria. A interação deste sesquiterpeno com predadores zoofitófagos, como Podisus nigrispinus (Dallas (Hemiptera, Pentatomidae, é inexistente apesar do reconhecido efeito do gossipol sobre insetos pragas do algodoeiro. Assim, este estudo avaliou o efeito do extrato de gossipol sobre ninfas e adultos de P. nigrispinus. O predador foi alimentado com

Solar hot water system installed at Quality Inn, Key West, Florida

Science.gov (United States)

1980-04-01

The solar energy hot water system installed in the Quality Inn, Key West, Florida, which consists of four buildings is described. Three buildings are low-rise, two-story buildings containing 100 rooms. The fourth is a four-story building with 48 rooms. The solar system was designed to provide approximately 50 percent of the energy required for the domestic hot water system. The solar system consists of approximately 1400 square feet of flat plate collector, two 500 gallon storage tanks, a circulating pump, and a controller. Operation of the system was begun in April 1978, and has continued to date with only three minor interruptions for pump repair. In the first year of operation, it was determined that the use of the solar facility resulted in forty percent fuel savings.

Study of Stark Effect in n-doped 1.55 μm InN0.92yP1-1.92yBiy/InP MQWs

Science.gov (United States)

Bilel, C.; Chakir, K.; Rebey, A.; Alrowaili, Z. A.

2018-05-01

The effect of an applied electric field on electronic band structure and optical absorption properties of n-doped InN0.92y P1-1.92y Bi y /InP multiple quantum wells (MQWs) was theoretically studied using a self-consistent calculation combined with the 16-band anti-crossing model. The incorporation of N and Bi atoms into an InP host matrix leads to rapid reduction of the band gap energy covering a large infrared range. The optimization of the well parameters, such as the well/barrier widths, N/Bi compositions and doping density, allowed us to obtain InN0.92y P1-1.92y Bi y /InP MQWs operating at the wavelength 1.55 μm. Application of the electric field causes a red-shift of the fundamental transition energy T 1 accompanied by a significant change in the spatial distribution of confined electron density. The Stark effect on the absorption coefficient of n-doped InN0.92y P1-1.92y Bi y /InP MQWs was investigated. The Bi composition of these MQWs was adjusted for each electric field value in order to maintain the wavelength emission at 1.55 μm.

R&W Club Frederick Hosts 4th Annual Golf Tournament Benefiting The Children’s Inn at NIH | Poster

Science.gov (United States)

The R&W Club Frederick’s 4th Annual Golf Tournament to benefit the Children’s Inn at NIH teed off on time despite cloudy weather and scattered showers. Employees from NCI at Frederick, the main NIH campus, and Leidos Biomed, along with family and friends, came to enjoy an afternoon at the beautiful Maryland National Golf Club in Middletown and to support a wonderful charity.

High energy ion irradiated III-N semiconductors (AlN, GaN, InN): study of point defect and extended defect creation

International Nuclear Information System (INIS)

Sall, Mamour

2013-01-01

Nitride semiconductors III N (AlN, GaN, InN) have interesting properties for micro-and opto-electronic applications. In use, they may be subjected to different types of radiation in a wide range of energy. In AlN, initially considered insensitive to electronic excitations (Se), we have demonstrated a novel type of synergy between Se and nuclear collisions (Sn) for the creation of defects absorbing at 4.7 eV. In addition, another effect of Se is highlighted in AlN: climb of screw dislocations under the influence of Se, at high fluence. In GaN, two mechanisms can explain the creation of defects absorbing at 2.8 eV: a synergy between Se and Sn, or a creation only due to Sn but with a strong effect of the size of displacement cascades. The study, by TEM, of the effects of Se in the three materials, exhibits behaviors highly dependent on the material while they all belong to the same family with the same atomic structure. Under monoatomic ion irradiations (velocity between 0.4 and 5 MeV/u), while discontinuous tracks are observed in GaN and InN, no track is observed in AlN with the highest electronic stopping power (33 keV/nm). Only fullerene clusters produce tracks in AlN. The inelastic thermal spike model was used to calculate the energies required to produce track in AlN, GaN and InN, they are 4.2 eV/atom, 1.5 eV/atom and 0.8 eV/atom, respectively. This sensitivity difference according to Se, also occurs at high fluence. (author)

Magnetic-field and temperature dependence of the energy gap in InN nanobelt

Directory of Open Access Journals (Sweden)

K. Aravind

2012-03-01

Full Text Available We present tunneling measurements on an InN nanobelt which shows signatures of superconductivity. Superconducting transition takes place at temperature of 1.3K and the critical magnetic field is measured to be about 5.5kGs. The energy gap extrapolated to absolute temperature is about 110μeV. As the magnetic field is decreased to cross the critical magnetic field, the device shows a huge zero-bias magnetoresistance ratio of about 400%. This is attributed to the suppression of quasiparticle subgap tunneling in the presence of superconductivity. The measured magnetic-field and temperature dependence of the superconducting gap agree well with the reported dependences for conventional metallic superconductors.

Identifying Sustainable Design Opportunities in Tribal Hotels and Casinos: Mescalero Inn of the Mountain Gods Hotel and Casino

Energy Technology Data Exchange (ETDEWEB)

Fuller, Diana [Univ. of Illinois, Springfield, IL (United States); Martino, Anthony [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Materials, Devices, & Energy Technologies; Begay, Sandra K. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Materials, Devices, & Energy Technologies

2016-10-01

The Indian Gaming Regulatory Act, passed by Congress on October 17, 1988 provided tribes with the Federal statute to pursue gaming activities on tribal lands. Many Native communities contribute to larger regional economies and tourism industries. These casino facilities often include resort-style hotel amenities. Not surprisingly, they are also large consumers of energy, operating 24 hours a day and 7 days a week. Tribes with hotels and casinos can implement sustainable design features and not only receive economic gain, but also environmental and community benefits. The intention of this paper is to identify sustainable design opportunities at the Inn of the Mountain Gods Hotel and Casino. This research stems from previous work the researcher conducted and subsequently published for the Illinois Green Business Association. First, the paper reviews what sustainable design is and points of interest when considering sustainable construction. Next, the paper explores the precedents set by the Blue Lake Rancheria, Rincon Band of Luiseno Indians, and the Forest County Potawatomi Tribe. Then, the research examines areas to collect baseline information and identify opportunities in sustainable design for the Mescalero Apache Tribe, Inn of the Mountain Gods Hotel and Casino located in New Mexico. Lastly, the work explores the resources and funding options available to the tribe.

Effect of gossypol on survival and reproduction of the zoophytophagous stinkbug Podisus nigrispinus (Dallas

Directory of Open Access Journals (Sweden)

Walter S. Evangelista Junior

2011-06-01

Full Text Available Effect of gossypol on survival and reproduction of the zoophytophagous stinkbug Podisus nigrispinus (Dallas. Gossypol is a sesquiterpene aldehyde found in cotton plants conferring resistance against herbivory. Although the effect of this sesquiterpenoid on insect pests of cotton is known, the interaction of this compound with zoophytophagous predators such as Podisus nigrispinus (Dallas (Hemiptera, Pentatomidae has not been studied so far. Thus, the objective of this study was to evaluate the effect of the purified gossypol on nymphs and adults of P. nigrispinus. Nymphs and adults of this predator were fed on Tenebrio molitor pupae and supplemented with solutions of gossypol at concentrations of 0.00, 0.05, 0.10, and 0.20% (w/v during the nymphal and adult stages or, only during the adult stage of P. nigrispinus. The nymphal stage of the predator was, on average, two days longer when suplemmented with gossypol. Emerged adults had lower fecundity and egg hatching, especially at the highest gossypol concentration (0.20% ingested during the nymphal and adult stages. However, this predator was not affected when it ingested the compound only during the adult stage. P. nigrispinus can have delayed nymphal development and lower reproductive performance when ingesting the gossypol during the nymphal and adult stages, but only at higher concentrations of gossypol than that produced by cotton plants.

Abstracts. 1978 AFOSR Contractors Meeting on Air-Breathing Combustion Dynamics and Kinetics, Ramada Inn-Downtown Dayton, Ohio, 10 - 13 October 1978

Science.gov (United States)

1978-10-13

Combustion in G.D. Smith, C.E. Peters High Speed Flows AEDC/ARO (PO-78-0012) 5:00 ADJOURN 6:30 Social Hour (Cash Bar) Ramada Inn Banquet 12 Oct. 78...which would sustain the instability structures observed in a number of problemA . During the initial phase of the development of the instabilities, the

75 FR 55401 - Notice of Intent To Rule on Request To Release Airport Property at the Dallas/Fort Worth...

Science.gov (United States)

2010-09-10

... To Release Airport Property at the Dallas/Fort Worth International Airport, DFW Airport, TX AGENCY... airport property. SUMMARY: The FAA proposes to rule and invite public comment on the request for permanent... H. Ford Aviation Investment Reform Act for the 21st Century (AIR 21). DATES: Comments must be...

78 FR 9105 - Notice of Intent To Rule on Request To Release Airport Property at the Dallas/Fort Worth...

Science.gov (United States)

2013-02-07

... To Release Airport Property at the Dallas/Fort Worth International Airport, DFW Airport, TX AGENCY... Airport Property. SUMMARY: The FAA proposes to rule and invite public comment on the request for permanent... H. Ford Aviation Investment Reform Act for the 21st Century (AIR 21). DATES: Comments must be...

Torre «Reunión», en Dallas Texas - EE. UU.

Directory of Open Access Journals (Sweden)

Becket, Welton

1980-12-01

Full Text Available The Reunion Tower, 50 stories and 170 m high, along with the adjacent 1,000 room hotel, constitutes the first phase of an urbanistic rehabilitation complex for a plot of 20 hectares, located in the South-West sector of the city's shopping centre. Due to its singular characteristics, the Tower has in fact already become a clear identifying mark in the city of Dallas. Right at the top, it ends in a geodesic dome, in three levels, that amount to over 2,300 m² of the total area, and where there is a restaurant on rotating platform, a cocktail room of the same characteristics, an observation terrace and a radio station. The project has been given the award of the Reinforced Cement Institute, and that of the American Institute of Architects (AIA corresponding to Los Angeles.

La Torre «Reunión», de 50 plantas y 170 m de altura constituye, junto con el hotel de 1.000 habitaciones adyacente, la primera fase de un complejo de rehabilitación urbanística para una parcela de 20 hectáreas situada en el sector suroeste del centro comercial de la ciudad. De hecho, por sus singulares características, la Torre se ha convertido ya en una clara señal de identidad de la ciudad de Dallas. En su extremo superior está rematada por una cúpula geodésica, con tres niveles que suman más de 2.300 m² de superficie total, y en los que están distribuidos un restaurante sobre plataforma giratoria, una sala de cocktails de iguales características, una terraza de observación y una emisora de radio. El proyecto ha merecido el premio concedido por el Instituto del Cemento Armado, y el del Instituto Americano de Arquitectos (AIA, correspondiente a Los Angeles.

Defense Base Realignment and Closure Budget Data for Naval Air Stations Dallas, Texas, and Memphis, Tennessee, Realigning to Carswell Air Reserve Base, Texas

National Research Council Canada - National Science Library

Granetto, Paul

1994-01-01

.... This report provides the results of the audit of 16 projects, valued at $122 million, for the realignment of the Naval Air Stations Memphis, Tennessee, and Dallas, Texas, to Carswell Air Reserve Base, Texas...

Polarized infrared reflectance studies for wurtzite InN epilayers on Si(111) grown by molecular beam expitaxy

International Nuclear Information System (INIS)

Ooi, P.K.; Lee, S.C.; Ng, S.S.; Hassan, Z.; Abu Hassan, H.; Chen, W.L.

2011-01-01

Room temperature polarized infrared reflectance technique is employed to study the optical properties of wurtzite InN epilayers on Si(111) grown by molecular beam expitaxy. The reflection spectra are compared to the calculated spectra generated based on the anisotropic dielectric function model. Good agreement between the measured and calculated spectra is obtained. From the fit of the experimental curve, the reststrahlen parameters at the center of Brillouin zone, the carrier concentration and mobility as well as the epilayers thicknesses are determined. The values of the carrier concentration and mobility are in good agreement with the results obtained from the Hall effects measurements.

Effect of Citrus floral extracts on the foraging behavior of the stingless bee Scaptotrigona pectoralis (Dalla Torre)

OpenAIRE

Grajales-Conesa,Julieta; Meléndez Ramírez,Virginia; Cruz-López,Leopoldo; Sánchez Guillén,Daniel

2012-01-01

Effect of Citrus floral extracts on the foraging behavior of the stingless bee Scaptotrigona pectoralis (Dalla Torre). Stingless bees have an important role as pollinators of many wild and cultivated plant species in tropical regions. Little is known, however, about the interaction between floral fragrances and the foraging behavior of meliponine species. Thus we investigated the chemical composition of the extracts of citric (lemon and orange) flowers and their effects on the foraging behavi...

Morphology of female reproductive tract of the predator Podisus nigrispinus (Dallas) (Heteroptera: Pentatomidae) fed on different diets

OpenAIRE

Lemos,Walkymário de Paulo; Ramalho,Francisco de Souza; Serrão,José Eduardo; Zanuncio,José Cola

2005-01-01

The morphology of the reproductive tract of Podisus nigrispinus (Dallas) females fed with Alabama argillacea (Hübner) larvae, artificial diet, Tenebrio molitor L. larvae or Musca domestica L. larvae were studied. The reproductive tract of females of this species presented yellow coloration and independent of the diet, each ovary had seven ovarioles joined through terminal filaments and forming a bunch shape structure. The histological data revealed that the ovary of P. nigrispinus was of mero...

Solar energy facility at North Hampton Recreation Center, Dallas, Texas

Science.gov (United States)

1980-01-01

The solar energy facility located at the North Hampton Park Recreation and Health Center, Dallas, Texas is presented. The solar energy system is installed in a single story (two heights), 16,000 sq ft building enclosing a gymnasium, locker area, and health care clinic surrounded by a recreational area and athletic field. The solar energy system is designed to provide 80 percent of the annual space heating, 48 percent of the annual space cooling, and 90 percent of the domestic hot water requirements. The system's operation modes and performance data acquisition system are described. The system's performance during the months of June, July, August, September, and October of 1979 are presented and show a negative savings of energy. Experience to date indicates however that the system concept has promise of acceptable performance. It is concluded that if proper control and sequencing components was maintained, then the system performance would improve to an acceptable level.

Delivering digital health and well-being at scale: lessons learned during the implementation of the dallas program in the United Kingdom

Science.gov (United States)

Devlin, Alison M; McGee-Lennon, Marilyn; O’Donnell, Catherine A; Bouamrane, Matt-Mouley; Agbakoba, Ruth; O’Connor, Siobhan; Grieve, Eleanor; Finch, Tracy; Wyke, Sally; Watson, Nicholas; Browne, Susan

2016-01-01

Objective To identify implementation lessons from the United Kingdom Delivering Assisted Living Lifestyles at Scale (dallas) program—a large-scale, national technology program that aims to deliver a broad range of digital services and products to the public to promote health and well-being. Materials and Methods Prospective, longitudinal qualitative research study investigating implementation processes. Qualitative data collected includes semi-structured e-Health Implementation Toolkit–led interviews at baseline/mid-point (n = 38), quarterly evaluation, quarterly technical and barrier and solutions reports, observational logs, quarterly evaluation alignment interviews with project leads, observational data collected during meetings, and ethnographic data from dallas events (n > 200 distinct pieces of qualitative data). Data analysis was guided by Normalization Process Theory, a sociological theory that aids conceptualization of implementation issues in complex healthcare settings. Results Five key challenges were identified: 1) The challenge of establishing and maintaining large heterogeneous, multi-agency partnerships to deliver new models of healthcare; 2) The need for resilience in the face of barriers and set-backs including the backdrop of continually changing external environments; 3) The inherent tension between embracing innovative co-design and achieving delivery at pace and at scale; 4) The effects of branding and marketing issues in consumer healthcare settings; and 5) The challenge of interoperability and information governance, when commercial proprietary models are dominant. Conclusions The magnitude and ambition of the dallas program provides a unique opportunity to investigate the macro level implementation challenges faced when designing and delivering digital health and wellness services at scale. Flexibility, adaptability, and resilience are key implementation facilitators when shifting to new digitally enabled models of care. PMID:26254480

Delivering digital health and well-being at scale: lessons learned during the implementation of the dallas program in the United Kingdom.

Science.gov (United States)

Devlin, Alison M; McGee-Lennon, Marilyn; O'Donnell, Catherine A; Bouamrane, Matt-Mouley; Agbakoba, Ruth; O'Connor, Siobhan; Grieve, Eleanor; Finch, Tracy; Wyke, Sally; Watson, Nicholas; Browne, Susan; Mair, Frances S

2016-01-01

To identify implementation lessons from the United Kingdom Delivering Assisted Living Lifestyles at Scale (dallas) program-a large-scale, national technology program that aims to deliver a broad range of digital services and products to the public to promote health and well-being. Prospective, longitudinal qualitative research study investigating implementation processes. Qualitative data collected includes semi-structured e-Health Implementation Toolkit-led interviews at baseline/mid-point (n = 38), quarterly evaluation, quarterly technical and barrier and solutions reports, observational logs, quarterly evaluation alignment interviews with project leads, observational data collected during meetings, and ethnographic data from dallas events (n > 200 distinct pieces of qualitative data). Data analysis was guided by Normalization Process Theory, a sociological theory that aids conceptualization of implementation issues in complex healthcare settings. Five key challenges were identified: 1) The challenge of establishing and maintaining large heterogeneous, multi-agency partnerships to deliver new models of healthcare; 2) The need for resilience in the face of barriers and set-backs including the backdrop of continually changing external environments; 3) The inherent tension between embracing innovative co-design and achieving delivery at pace and at scale; 4) The effects of branding and marketing issues in consumer healthcare settings; and 5) The challenge of interoperability and information governance, when commercial proprietary models are dominant. The magnitude and ambition of the dallas program provides a unique opportunity to investigate the macro level implementation challenges faced when designing and delivering digital health and wellness services at scale. Flexibility, adaptability, and resilience are key implementation facilitators when shifting to new digitally enabled models of care. © The Author 2015. Published by Oxford University Press on behalf of

76 FR 69753 - Agency Information Collection Activities: Proposed Collection; Comment Request, Federal Hotel and...

Science.gov (United States)

2011-11-09

..., Federal Hotel and Motel Fire Safety Declaration Form AGENCY: Federal Emergency Management Agency, DHS... systems within hotels and motels. DATES: Comments must be submitted on or before January 9, 2012... requires FEMA to establish and maintain a list of hotels, motels, and similar places of public...

Hole transport and photoluminescence in Mg-doped InN

Energy Technology Data Exchange (ETDEWEB)

Miller, N.; Ager III, J. W.; Smith III, H. M.; Mayer, M. A.; Yu, K. M.; Haller, E. E.; Walukiewicz, W.; Schaff, W. J.; Gallinat, C.; Koblmuller, G.; Speck, J. S.

2010-03-24

Hole conductivity and photoluminescence were studied in Mg-doped InN films grown by molecular beam epitaxy. Because surface electron accumulation interferes with carrier type determination by electrical measurements, the nature of the majority carriers in the bulk of the films was determined using thermopower measurements. Mg concentrations in a"window" from ca. 3 x 1017 to 1 x 1019 cm-3 produce hole-conducting, p-type films as evidenced by a positive Seebeck coecient. This conclusion is supported by electrolyte-based capacitance voltage measurements and by changes in the overall mobility observed by Hall effect, both of which are consistent with a change from surface accumulation on an n-type film to surface inversion on a p-type film. The observed Seebeck coefficients are understood in terms of a parallel conduction model with contributions from surface and bulk regions. In partially compensated films with Mg concentrations below the window region, two peaks are observed in photoluminescence at 672 meV and at 603 meV. They are attributed to band-to-band and band-to-acceptor transitions, respectively, and an acceptor binding energy of ~;;70 meV is deduced. In hole-conducting films with Mg concentrations in the window region, no photoluminescence is observed; this is attributed to electron trapping by deep states which are empty for Fermi levels close to the valence band edge.

Optical studies of MBE-grown InN nanocolumns: Evidence of surface electron accumulation

Science.gov (United States)

Segura-Ruiz, J.; Garro, N.; Cantarero, A.; Denker, C.; Malindretos, J.; Rizzi, A.

2009-03-01

Vertically self-aligned InN nanocolumns have been investigated by means of scanning electron microscopy, Raman scattering, and photoluminescence spectroscopy. Different nanocolumn morphologies corresponding to different molecular beam epitaxy growth conditions have been studied. Raman spectra revealed strain-free nanocolumns with high crystalline quality for the full set of samples studied. Longitudinal optical modes both uncoupled and coupled to an electron plasma coexist in the Raman spectra pointing to the existence of two distinctive regions in the nanocolumn: a surface layer of degenerated electrons and a nondegenerated inner core. The characteristics of the low-temperature photoluminescence and its dependence on temperature and excitation power can be explained by a model considering localized holes recombining with degenerated electrons close to the nonpolar surface. The differences observed in the optical response of different samples showing similar crystalline quality have been attributed to the variation in the electron accumulation layer with the growth conditions.

Geomorphology of the Trinity River floodplain in Dallas County, Texas

Science.gov (United States)

Haugen, B. D.; Roig-Silva, C.; Manning, A. R.; Harrelson, D. W.; Olsen, R. S.; Dunbar, J. P.; Pearson, M. L.

2010-12-01

Data from more than 1,800 geologic borings and over 500 cone penetrometer tests (CPTs) were used to characterize the geomorphology of the Trinity River floodplain in the Dallas Metropolitan Area. Historical maps, aerial photographs and other published information were used to prepare a preliminary geomorphic map. Boring logs and CPT data were then used to refine the preliminary map, produce a series of two-dimensional (2D) and three-dimensional (3D) cross sections, and interpret the recent geologic history of the area. Geomorphologic interpretations - most importantly the locations of paleo-channel deposits of sands and gravels - were used to identify reaches of the levees managed by the United States Army Corps of Engineers (USACE) and the City of Dallas that may be at significant risk for under-seepage. Boring logs and CPT data collected atop the levees were used to assess through-seepage risks. Local bedrock is comprised of cretaceous-age Eagle Ford Shale and Austin Chalk. Depth to bedrock in the study area averaged 14.6 m (47.8 ft). The uppermost surface of bedrock has been deeply incised by a meandering river. Vertical relief between the shallowest bedrock sections and deepest portion of the incised paleo-channel is more than 15 m (50 ft). In places the incised paleo-channel is more than 0.8 km (0.5 mi) wide. These data confirm the presence of an erosional unconformity between local bedrock and overlying quaternary floodplain deposits. The observed erosional unconformity is attributed to a higher-energy fluvial environment that occurred as a result of a drop in base level. Recent floodplain deposits consist of interlobate point bar, channel and overbank sediments that are generally distributed in a fining-upward sequence. Buried channel dimensions vary widely, but are more than 250 m (820 ft) in some areas - much larger than the current channel. A semi-continuous basal layer of quaternary sands and gravels approximately 2 to 5 m (7 to 16 ft) thick exists in

Phase mapping of aging process in InN nanostructures: oxygen incorporation and the role of the zinc blende phase

International Nuclear Information System (INIS)

Gonzalez, D; Lozano, J G; Herrera, M; Morales, F M; GarcIa, R; Ruffenach, S; Briot, O

2010-01-01

Uncapped InN nanostructures undergo a deleterious natural aging process at ambient conditions by oxygen incorporation. The phases involved in this process and their localization is mapped by transmission electron microscopy (TEM)-related techniques. The parent wurtzite InN (InN-w) phase disappears from the surface and gradually forms a highly textured cubic layer that completely wraps up a InN-w nucleus which still remains from the original single-crystalline quantum dots. The good reticular relationships between the different crystals generate low misfit strains and explain the apparent easiness for phase transformations at room temperature and pressure conditions, but also disable the classical methods to identify phases and grains from TEM images. The application of the geometrical phase algorithm in order to form numerical moire mappings and RGB multilayered image reconstructions allows us to discern among the different phases and grains formed inside these nanostructures. Samples aged for shorter times reveal the presence of metastable InN:O zinc blende (zb) volumes, which act as the intermediate phase between the initial InN-w and the most stable cubic In 2 O 3 end phase. These cubic phases are highly twinned with a proportion of 50:50 between both orientations. We suggest that the existence of the intermediate InN:O-zb phase should be seriously considered to understand the reason for the widely scattered reported fundamental properties of thought to be InN-w, as its bandgap or superconductivity.

On Dallas Smythe’s “Audience Commodity”: An Interview with Lee McGuigan and Vincent Manzerolle

Directory of Open Access Journals (Sweden)

Henry Adam Svec

2015-07-01

Full Text Available This interview with Lee McGuigan and Vincent Manzerolle explores some concepts and debates charted by their new co-edited book, The Audience Commodity in a Digital Age: Revisiting a Critical Theory of Commercial Media, which both celebrates and scrutinizes Dallas Smythe’s canonical 1977 essay, “Communications: Blindspot of Western Marxism”. The discussion covers Smythe’s contribution to the field of media studies and the state of current debates pertaining to the theory of the audience commodity, and it also touches on questions of Smythe’s mainstream reception and legacy.

29 CFR 779.383 - “Hotel” and “motel” exemptions under section 13(b)(8).

Science.gov (United States)

2010-07-01

... Service Establishments Hotels and Motels § 779.383 “Hotel” and “motel” exemptions under section 13(b)(8). (a) General. A hotel or motel establishment may qualify for exemption from the Act's overtime pay... employed by an establishment which is a hotel, motel * * *.” The 13(b)(8) exemption is applicable...

INFLUENCE OF TEMPERATURE ON NYMPHAL DEVELOPMENT OF Podisus distinctus (DALLAS (HETEROPTERA: PENTATOMIDAE

Directory of Open Access Journals (Sweden)

Germi Porto Santos

2004-07-01

Full Text Available The objective of this research was to study the effect of five temperatures (17ºC; 21ºC; 25ºC; 29ºC and 33oC on survival and nymph development of Podisus distinctus (Dallas (Heteroptera: Pentatomidae in laboratory. Period of egg incubation decreased with temperature elevation being lower at 29oC and lethal at 33oC. This indicates that superior thermal limit for this species can be found between these temperatures. Optimal temperature for egg viability was 23.7oC. Nymphs of Podisus distinctus completed its development between 17 and 29oC with optimal temperature at 26.3oC with higher nymph viability at intermediate temperatures (19ºC and 25oC. Optimal temperature for rearing this predator lay between 25ºC and 27oC.

Runway Incursion Prevention System: Demonstration and Testing at the Dallas/Fort Worth International Airport

Science.gov (United States)

Jones, Denise R.; Quach, Cuong C.; Young, Steven D.

2007-01-01

A Runway Incursion Prevention System (RIPS) was tested at the Dallas-Ft. Worth International Airport (DFW) in October 2000. The system integrated airborne and ground components to provide both pilots and controllers with enhanced situational awareness, supplemental guidance cues, a real-time display of traffic information, and warning of runway incursions in order to prevent runway incidents while also improving operational capability. A series of test runs was conducted using NASA s Boeing 757 research aircraft and a test van equipped to emulate an incurring aircraft. The system was also demonstrated to over 100 visitors from the aviation community. This paper gives an overview of the RIPS, DFW flight test activities, and quantitative and qualitative results of the testing.

Temperature and Violent Crime in Dallas, Texas: Relationships and Implications of Climate Change

Directory of Open Access Journals (Sweden)

Janet L. Gamble

2012-08-01

Full Text Available Introduction: To investigate relationships between ambient temperatures and violent crimes to determine whether those relationships are consistent across different crime categories and whether they are best described as increasing linear functions, or as curvilinear functions that decrease beyond some temperature threshold. A secondary objective was to consider the implications of the observed relationships for injuries and deaths from violent crimes in the context of a warming climate. To address these questions, we examined the relationship between daily ambient temperatures and daily incidents of violent crime in Dallas, Texas from 1993–1999.Methods: We analyzed the relationships between daily fluctuations in ambient temperature, other meteorological and temporal variables, and rates of daily violent crime using time series piece-wise regression and plots of daily data. Violent crimes, including aggravated assault, homicide, and sexualassault, were analyzed.Results: We found that daily mean ambient temperature is related in a curvilinear fashion to daily rates of violent crime with a positive and increasing relationship between temperature and aggravated crime that moderates beyond temperatures of 80 F and then turns negative beyond 90 F.Conclusion: While some have characterized the relationship between temperature and violent crime as a continually increasing linear function, leaving open the possibility that aggravated crime will increase in a warmer climate, we conclude that the relationship in Dallas is not linear, but moderatesand turns negative at high ambient temperatures. We posit that higher temperatures may encourage people to seek shelter in cooler indoor spaces, and that street crime and other crimes of opportunity are subsequently decreased. This finding suggests that the higher ambient temperatures expected with climate change may result in marginal shifts in violent crime in the short term, but are not likely to be

Implementation of the first wellness-fitness evaluation for the Dallas Fire-Rescue Department

Science.gov (United States)

Seals, Norman; Martin, JoAnn; Russell, Bryan

2010-01-01

More than 100 firefighters lose their lives in the line of duty each year; many of these deaths are caused by cardiovascular events and underlying coronary heart disease. In addition, firefighters are at higher-than-normal risk of developing certain types of cancer. To improve health and fitness among its firefighters, the Dallas Fire-Rescue Department developed and implemented an annual wellness-fitness program in 2008. The program detected and addressed medical issues including coronary disease, hypertension, high triglyceride levels, high cholesterol, high blood glucose levels, and hematuria. Prostate, thyroid, breast, kidney, and bladder cancers were also detected. By identifying these issues, engaging the firefighters' personal physicians, and recommending individualized treatment plans, this program may have extended lives and improved the quality of life for the firefighters. PMID:20671818

Sensibilidad postratamiento de blanquamiento dental con la solución de McInnes en pacientes con fluorosis dental grado TF4

OpenAIRE

Paredes Balseca, Jenny Carolina

2017-01-01

The dental sensibility is one of the problems caused by multiple factors, one of them is the posttreatment sensibility to the dental clearance, nevertheless it is the most used method at present in the persons who has dental fluorosis with the purpose of improving the color of the tooth and the esthetics, in the present investigation there was studied the behavior of the application of solution of McInnes in this type of teeth by relation to the sensibility Objective: To evaluate the degree o...

First occurrence of Alcaeorrhynchus grandis (Dallas) (Hemiptera: Pentatomidae) preying on defoliating caterpillars of oil palm in the state of Para, Brazil; Primeira ocorrencia de Alcaeorrhynchus grandis (Dallas) (Hemiptera: Pentatomidae) predando lagartas desfolhadoras do dendezeiro no estado do Para, Brasil

Energy Technology Data Exchange (ETDEWEB)

Ribeiro, Rafael C.; Lemos, Walkymario P.; Muller, Antonio A. [EMBRAPA Amazonia Oriental, Belem, PA (Brazil). Lab. de Entomologia], e-mail: rafaufra@yahoo.com.br, e-mail: wplemos@cpatu.embrapa.br; Muller, Antonio A. [Embrapa Amazonia Oriental, Belem, PA (Brazil). Lab. de Entomologia; Bernardino, Aline S.; Buecke, Joel [Grupo Agropalma S/A., Tailandia, PA (Brazil)

2010-01-15

The oil palm Elaeis guineensis is usually attacked by pests, particularly, defoliating caterpillars. Between 2004 and 2006 a stinkbug predator (Asopinae) was registered preying on caterpillars of Brassolis sophorae L., Opsiphanes invirae Hubner (Lepidoptera: Nymphalidae) and Sibine spp. (Lepidoptera: Limacodidae), reducing their populations in commercial oil palm plantations in the State of Para, Brazil. Specimens of the natural enemy were collected, mounted, and identified as Alcaeorrhynchus grandis (Dallas) (Hemiptera: Pentatomidae), corresponding to the first report of the occurrence of this stinkbug attacking defoliating caterpillars of oil palm in Brazil. (author)

Structural and electronic properties of InN nanowire network grown by vapor-liquid-solid method

Science.gov (United States)

Barick, B. K.; Rodríguez-Fernández, Carlos; Cantarero, Andres; Dhar, S.

2015-05-01

Growth of InN nanowires have been carried out on quartz substrates at different temperatures by vapor-liquid-solid (VLS) technique using different thicknesses of Au catalyst layer. It has been found that a narrow window of Au layer thickness and growth temperature leads to multi-nucleation, in which each site acts as the origin of several nanowires. In this multi-nucleation regime, several tens of micrometer long wires with diameter as small as 20 nm are found to grow along [ 11 2 ¯ 0 ] direction (a-plane) to form a dense network. Structural and electronic properties of these wires are studied. As grown nanowires show degenerate n-type behavior. Furthermore, x-ray photoemission study reveals an accumulation of electrons on the surface of these nanowires. Interestingly, the wire network shows persistence of photoconductivity for several hours after switching off the photoexcitation.

Structural and electronic properties of InN nanowire network grown by vapor-liquid-solid method

Energy Technology Data Exchange (ETDEWEB)

Barick, B. K., E-mail: bkbarick@gmail.com, E-mail: subho-dh@yahoo.co.in; Dhar, S., E-mail: bkbarick@gmail.com, E-mail: subho-dh@yahoo.co.in [Department of Physics, Indian Institute of Technology, Bombay, Mumbai-400076 (India); Rodríguez-Fernández, Carlos; Cantarero, Andres [Materials Science Institute, University of Valencia, PO Box 22085, 46071 Valencia (Spain)

2015-05-15

Growth of InN nanowires have been carried out on quartz substrates at different temperatures by vapor-liquid-solid (VLS) technique using different thicknesses of Au catalyst layer. It has been found that a narrow window of Au layer thickness and growth temperature leads to multi-nucleation, in which each site acts as the origin of several nanowires. In this multi-nucleation regime, several tens of micrometer long wires with diameter as small as 20 nm are found to grow along [112{sup -}0] direction (a-plane) to form a dense network. Structural and electronic properties of these wires are studied. As grown nanowires show degenerate n-type behavior. Furthermore, x-ray photoemission study reveals an accumulation of electrons on the surface of these nanowires. Interestingly, the wire network shows persistence of photoconductivity for several hours after switching off the photoexcitation.

The Lifetime Value of a Loyal Customer: What Can a Child Care Director Learn from Domino's Pizza and a Cadillac Dealer in Dallas?

Science.gov (United States)

Copeland, Margaret Leitch; Gimilaro, Susan

2010-01-01

In "The Service Profit Chain," Harvard Business School professors James Heskett, Earl Sasser, and Leonard Schlesinger (1997) offer two anecdotes--from Domino's Pizza and a Dallas Cadillac dealership--that illuminate the concept of valuing a lifetime customer. Experts estimate that the lifetime value of a loyal Domino's Pizza customer is $4,000 and…

Electrical transport in GaN and InN nanowires; Elektrischer Transport in GaN- und InN-Nanodraehten

Energy Technology Data Exchange (ETDEWEB)

Richter, Thomas Fabian

2008-12-19

This thesis discusses the analysis of the electrical transport in GaN and InN nanowires at room temperature and deep temperatures. From those measurements two different transport models for those two in matter of the band banding completely different materials have been found. In the investigation of the GaN nanowires the main focus was the electrical transport in dependence of the diameter and the n-doping. With the use of IV-measurements on those MBE grown nanowires with different diameters at dark and under UV illumination as well as the decay of the persistent photocurrent, it was possible to find an for GaN untypical behaviour. The electrical transport in those wires is extremely diameter dependent. The dark current shows space charged limited current. With the help of those cognitions a diameter dependent transport model could be found. The transport phenomena in those wires is based on the diameter depending band bending at the edge of the wires caused by the Fermi level pinning inside the forbidden band. This model can be fit to the data with the three parameter doping, fermi level pinning and wire diameter. On the base of those effects a method to determine the doping concentration inside those wires without field effect measurements and contact resistance has been developed. The defect structure inside those wires has been analysed with the help of spectral photoluminescence measurements. Here several defect bands have been found and it was possible with help of several contacts on one single wire to determine different defect regions along the wire and to explain them by the lattice mismatch between nanowire and substrate. Further temperature depending measurements and investigations on Schottky contacted wires as well as on GaN wires with AlN tunnel structures complete the work on GaN. The electrical characterisation on a large scale of undoped and doped InN nanowires shows linear growth of the dark current with the diameter up to wires of around 100 nm

PLAN DE MARKETING PARA EL HOTEL CARRIZAL INN

Directory of Open Access Journals (Sweden)

Ángel Guillermo Félix Mendoza

2015-06-01

Full Text Available El objetivo principal de esta investigación fue la elaboración de un plan de marketing para el Hotel Carrizal Inn ubicado en la ciudad de Calceta, provincia de Manabí, Ecuador. Se estructuraron tres fases metodológicas, el diagnóstico situacional, estudio de mercado y plan turístico. En la primera fase se delimitó el área de estudio; además se efectuó un análisis interno y externo, utilizando matrices de diagnóstico como la evaluación de factores internos y externos, matriz de competidores y matriz de diagnóstico de fortalezas, oportunidades, debilidades y amenazas. En el estudio de mercado se analizaron los componentes de oferta y demanda del hotel, se determinaron algunas fallas en la denominación utilizada, según los criterios para la categorización hotelera manejada por el Ministerio de Turismo. En función del diagnóstico FODA, se generaron estrategias para el posicionamiento y comercialización del hotel. Mediante las encuestas realizadas a los huéspedes se pudo conocer el perfil del visitante que llega al hotel y se elaboró un plan publicitario, en el cual sobresale el logotipo y slogan, tríptico promocional, la promoción en página web y redes sociales. Se establecieron estrategias del mix para minimizar falencias operativas en el hotel. Se concluye que la principal nomenclatura utilizada no concuerda con los parámetros establecidos por el Ministerio de Turismo, por lo que se plantea reestructurar ciertas áreas específicas como la cantidad de habitaciones o cambiar la denominación a hostal.

Final Report on the Audit of the Administration of the Contract Closeout Process at the Defense Contract Management Region, Dallas

Science.gov (United States)

1990-09-18

This is our final report on the Audit of the Administration of the Contract Closeout Process at the Defense Contract Management Region, Dallas (DCMR... audit was made from January to October 1989. The objectives of the audit were to determine the timeliness of the contract closeout process, the validity...As part of the audit , we also evaluated internal controls over the contract closeout process. As of December 31, 1988, the Contract Administration

Sports hernia: the experience of Baylor University Medical Center at Dallas

Science.gov (United States)

2011-01-01

Groin injuries in high-performance athletes are common, occurring in 5% to 28% of athletes. Athletic pubalgia syndrome, or so-called sports hernia, is one such injury that can be debilitating and sport ending in some athletes. It is a clinical diagnosis of chronic, painful musculotendinous injury to the medial inguinal floor occurring with athletic activity. Over the past 12 years, we have operated on >100 patients with this injury at Baylor University Medical Center at Dallas. These patients have included professional athletes, collegiate athletes, competitive recreational athletes, and the occasional “weekend warrior.” The repair used is an open technique using a lightweight polypropylene mesh. Patient selection is important, as is collaboration with other experienced and engaged sports health care professionals, including team trainers, physical therapists, team physicians, and sports medicine and orthopedic surgeons. Of the athletes who underwent surgery, 98% have returned to competition. After a minimum of 6 weeks for recovery and rehabilitation, they have usually returned to competition within 3 months. PMID:21566750

Structural and electronic properties of InN nanowire network grown by vapor-liquid-solid method

Directory of Open Access Journals (Sweden)

B. K. Barick

2015-05-01

Full Text Available Growth of InN nanowires have been carried out on quartz substrates at different temperatures by vapor-liquid-solid (VLS technique using different thicknesses of Au catalyst layer. It has been found that a narrow window of Au layer thickness and growth temperature leads to multi-nucleation, in which each site acts as the origin of several nanowires. In this multi-nucleation regime, several tens of micrometer long wires with diameter as small as 20 nm are found to grow along [ 11 2 ̄ 0 ] direction (a-plane to form a dense network. Structural and electronic properties of these wires are studied. As grown nanowires show degenerate n-type behavior. Furthermore, x-ray photoemission study reveals an accumulation of electrons on the surface of these nanowires. Interestingly, the wire network shows persistence of photoconductivity for several hours after switching off the photoexcitation.

Desenvolvimento de Podisus nigrispinus (Dallas (Heteroptera, Pentatomidae com Zophobas confusa Gebien (Coleoptera, Tenebrionidae comparado à duas outras presas alternativas Development of Podisus nigrispinus (Dallas (Heteroptera, Pentatomidae fed with Zophobas confusa Gebien (Coleoptera, Tenebrionidae compared with two another alternative preys

Directory of Open Access Journals (Sweden)

Teresinha V Zanuncio

1996-01-01

Full Text Available Nymphs of Podisus nigrispinus (Dallas, 1851 were fed with Zophobas confusa Gebien, 1906, Tenebrio molitor Linnaeus, 1758 (Coleoptera, Tenebrionidae and Musca domestica Linnaeus, 1758 (Diptera, Muscidae under 25±0.5ºC, 60±10% of RH and photophase of 12h. Nymphal viability of P. nigrispinus were 64.0%, 80.0% and 92.0% with Z. confusa, M. domestica and T. molitor, respectively. No differences were found for pre-oviposition period, number of egg masses, number of eggs, egg viability, and longevity for females of this predator fed with any of these preys.

Evaluation of testing strategies for the radiation tolerant ATLAS n **+-in-n pixel sensor

CERN Document Server

Klaiber Lodewigs, Jonas M

2003-01-01

The development of particle tracker systems for high fluence environments in new high-energy physics experiments raises new challenges for the development, manufacturing and reliable testing of radiation tolerant components. The ATLAS pixel detector for use at the LHC, CERN, is designed to cover an active sensor area of 1.8 m**2 with 1.1 multiplied by 10 **8 read-out channels usable for a particle fluence up to 10 **1**5 cm**-**2 (1 MeV neutron equivalent) and an ionization dose up to 500 kGy of mainly charged hadron radiation. To cope with such a harsh environment the ATLAS Pixel Collaboration has developed a radiation hard n **+-in-n silicon pixel cell design with a standard cell size of 50 multiplied by 400 mum**2. Using this design on an oxygenated silicon substrate, sensor production has started in 2001. This contribution describes results gained during the development of testing procedures of the ATLAS pixel sensor and evaluates quality assurance procedures regarding their relevance for detector operati...

Molten Salt-Based Growth of Bulk GaN and InN for Substrates

Energy Technology Data Exchange (ETDEWEB)

Waldrip, Karen Elizabeth [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Advanced Power Sources Technology Dept.; Tsao, Jeffrey Yeenien [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Energy Sciences Dept.; Kerley, Thomas M. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Advanced Materials Sciences Dept.

2006-09-01

An atmospheric pressure approach to growth of bulk group III-nitrides is outlined. Native III-nitride substrates for optoelectronic and high power, high frequency electronics are desirable to enhance performance and reliability of these devices; currently, these materials are available in research quantities only for GaN, and are unavailable in the case of InN. The thermodynamics and kinetics of the reactions associated with traditional crystal growth techniques place these activities on the extreme edges of experimental physics. The technique described herein relies on the production of the nitride precursor (N^3-) by chemical and/or electrochemical methods in a molten halide salt. This nitride ion is then reacted with group III metals in such a manner as to form the bulk nitride material. The work performed during the period of funding (July 2004-September 2005) focused on the initial measurement of the solubility of GaN in molten LiCl as a function of temperature, the construction of electrochemical cells, the modification of a commercial glove box (required for handling very hygroscopic LiCl), and on securing intellectual property for the technique.

Effect of diet on male reproductive tract of Podisus nigrispinus (Dallas (Heteroptera: Pentatomidae

Directory of Open Access Journals (Sweden)

W. P Lemos

Full Text Available The morphology and histology of the reproductive tract of males of the predator Podisus nigrispinus (Dallas fed on different diets were studied. P. nigrispinus was fed on diets of: larvae of Alabama argillacea (Hübner, Tenebrio molitor L., Musca domestica L., and an artificial diet. The male reproductive tract, independent of diet, showed testes with intense red coloration in a compact, circular, or slightly oval structure. The vasa deferentia were similar in color to the testes and formed long filaments, which joined with the yellow-cream colored ejaculatory duct. The morphological characteristics of the male reproductive tract were similar under all diets, except for the artificial one. The histological studies demonstrated that independent of the diet the testes of P. nigrispinus were composed of four to six follicles. The testes with six follicles generally had four developed and two atrophied follicles. The morphological and histological differences of the testes of P. nigrispinus when fed with different prey are presented and discussed.

Growth of high-quality hexagonal InN on 3C-SiC (001) by molecular beam epitaxy

International Nuclear Information System (INIS)

Yaguchi, Hiroyuki; Hijikata, Yasuto; Yoshida, Sadafumi; Kitamura, Yoshihiro; Nishida, Kenji; Iwahashi, Yohei

2005-01-01

We have grown hexagonal InN (h-InN) films on 3C-SiC (001) substrates by RF-N 2 plasma molecular beam epitaxy taking account of small lattice mismatch between h-InN (10-10) and 3C-SiC (110). It was found from X-ray diffraction (XRD) measurements that h-InN grows with h-InN (0001) vertical stroke vertical stroke 3C-SiC (001) and h-InN (1-100) vertical stroke vertical stroke 3C-SiC (110). XRD measurements also revealed that the h-InN epitaxial layers grown on 3C-SiC (001) are composed of single domain. Strong and sharp photoluminescence from the h-InN was clearly observed at around 0.69 eV. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

The evaluation of cutoff rigidities and reentrant albedo calculations for Palestine, Dallas, and Midland, Texas

International Nuclear Information System (INIS)

Shea, M.A.; Smart, D.F.

1975-01-01

By using the trajectory-tracing technique, cutoff rigidities for Palestine, Dallas, and Midland, Texas, have been calculated as a function of various zenith and azimuth angles. Extensive analysis of the trajectory calculations shows that there is a systematic uncertainty involved in computing the lowest allowed rigidity, and this uncertainty may be a significant fraction of the penumbral width. Continuation of the trajectory-tracing process below the Stormer cutoff allows an evaluation of the reentrant albedo, showing that the average invariant latitude of the guiding center of the trajectory at the albedo origin is the same as the average invariant latitude of the guiding center of the particle trajectory at the detection point. No significant difference in the cutoff rigidities for these locations is found when the external magnetic fields present in the magnetosphere are added to the geomagnetic field of internal origin

First occurrence of Alcaeorrhynchus grandis (Dallas) (Hemiptera: Pentatomidae) preying on defoliating caterpillars of oil palm in the state of Para, Brazil

International Nuclear Information System (INIS)

Ribeiro, Rafael C.; Lemos, Walkymario P.; Muller, Antonio A.

2010-01-01

The oil palm Elaeis guineensis is usually attacked by pests, particularly, defoliating caterpillars. Between 2004 and 2006 a stinkbug predator (Asopinae) was registered preying on caterpillars of Brassolis sophorae L., Opsiphanes invirae Hubner (Lepidoptera: Nymphalidae) and Sibine spp. (Lepidoptera: Limacodidae), reducing their populations in commercial oil palm plantations in the State of Para, Brazil. Specimens of the natural enemy were collected, mounted, and identified as Alcaeorrhynchus grandis (Dallas) (Hemiptera: Pentatomidae), corresponding to the first report of the occurrence of this stinkbug attacking defoliating caterpillars of oil palm in Brazil. (author)

Beaulieu-Boycott-Innes syndrome: an intellectual disability syndrome with characteristic facies.

Science.gov (United States)

Casey, Jillian; Jenkinson, Allan; Magee, Alex; Ennis, Sean; Monavari, Ahmad; Green, Andrew; Lynch, Sally A; Crushell, Ellen; Hughes, Joanne

2016-10-01

We report a female child from an Irish Traveller family presenting with severe intellectual disability, dysmorphic features, renal anomalies, dental caries and cyclical vomiting. Current health issues include global developmental delay, mild concentric left ventricular hypertrophy, dental malocclusion and caries and a single duplex left kidney. The proband and her mother also have multiple epiphyseal dysplasia. Whole-exome sequencing was performed to identify the underlying genetic cause. DNA from the proband was enriched with the Agilent Sure Select v5 Exon array and sequenced on an Illumina HiSeq. Rare homozygous variants were prioritized. Whole-exome sequencing identified three linked homozygous missense variants in THOC6 (c.298T>A, p.Trp100Arg; c.700G>C, p.Val234Leu; c.824G>A, p.Gly275Asp) as the likely cause of this child's intellectual disability syndrome, resulting in a molecular diagnosis of Beaulieu-Boycott-Innes syndrome (BBIS). This is the first report of BBIS in Europe. BBIS has been reported previously in two Hutterite families and one Saudi family. A review of all patients to date shows a relatively homogenous phenotype. Core clinical features include low birth weight with subsequent growth failure, short stature, intellectual disability with language delay, characteristic facies, renal anomalies and dental malocclusion with caries. Some patients also have cardiac defects. All patients show characteristic dysmorphic facial features including a tall forehead with high anterior hairline and deep-set eyes with upslanting palpebral fissures. The coexistence of intellectual disability together with these characteristic facies should provide a diagnostic clue for BBIS during patient evaluation.

29 CFR 779.338 - Effect of 1961 and 1966 amendments.

Science.gov (United States)

2010-07-01

... were: Hotels, motels, restaurants, motion picture theaters, seasonally operated amusement or... mentally handicapped or gifted children. These establishments were exempt if they met the basic 50 percent..., motels, and restaurants must meet the same tests as other retail or service establishments (see § 779.337...

Membrane filter technologies for safe and clean processes and improved production; Filtrazione. Sicurezza, igiene, migliore produzione. Esperienze e proposte dalla Francia

Energy Technology Data Exchange (ETDEWEB)

Mezzalira, P. (comp.)

2001-03-01

A wide variety of separation technologies, from membrane filtration, to chromatography, from reverse osmosis to micro- and ultrafiltration, with state-of-the-art tools are employed in various sectors to optimise process safety and improve production. The expertise and know-how of some companies in France. [Italian] Diverse tecnologie di filtrazione, dalla separazione a membrana, alla cromatografia, dall'osmosi inversa alla micro e ultrafiltrazione con apparecchiature d'avanguardia continuamente aggiornate, per le svariate applicazioni in diversi settori di attivita', all'insegna della sicurezza, dell'igiene, e di una migliore produttivita'.

Electronic and thermoelectric properties of InN studied using ab initio density functional theory and Boltzmann transport calculations

Energy Technology Data Exchange (ETDEWEB)

Borges, P. D., E-mail: pdborges@gmail.com, E-mail: lscolfaro@txstate.edu; Scolfaro, L., E-mail: pdborges@gmail.com, E-mail: lscolfaro@txstate.edu [Department of Physics, Texas State University, San Marcos, Texas 78666 (United States)

2014-12-14

The thermoelectric properties of indium nitride in the most stable wurtzite phase (w-InN) as a function of electron and hole concentrations and temperature were studied by solving the semiclassical Boltzmann transport equations in conjunction with ab initio electronic structure calculations, within Density Functional Theory. Based on maximally localized Wannier function basis set and the ab initio band energies, results for the Seebeck coefficient are presented and compared with available experimental data for n-type as well as p-type systems. Also, theoretical results for electric conductivity and power factor are presented. Most cases showed good agreement between the calculated properties and experimental data for w-InN unintentionally and p-type doped with magnesium. Our predictions for temperature and concentration dependences of electrical conductivity and power factor revealed a promising use of InN for intermediate and high temperature thermoelectric applications. The rigid band approach and constant scattering time approximation were utilized in the calculations.

29 CFR 779.382 - May qualify as exempt 13(a)(2) establishments.

Science.gov (United States)

2010-07-01

... STANDARDS ACT AS APPLIED TO RETAILERS OF GOODS OR SERVICES Exemptions for Certain Retail or Service Establishments Hotels and Motels § 779.382 May qualify as exempt 13(a)(2) establishments. A hotel or motel establishment may qualify as an exempt retail or service establishment under section 13(a)(2) of the Act...

Temperature profiles from XBT casts from the DALLAS from Ocean Weather Station C (OWS-C) and D (OWS-D) in the North Atlantic Ocean from 1973-11-03 to 1973-11-27 (NODC Accession 7301191)

Data.gov (United States)

National Oceanic and Atmospheric Administration, Department of Commerce — Bathythermograph data were collected from the DALLAS within a 1-mile radius of Ocean Weather Station C (5245N 03530W), D (4400N 04100W), and in transit. Data were...

Hotel room suicide.

Science.gov (United States)

Zarkowski, Paul; Avery, David

2006-10-01

The objective of our research was to quantify the increased risk of suicide associated with registering in local hotels/motels. Medical examiner case files of suicide in King County, Washington, were reviewed for years 2002-2004. The incidence of suicide in local residents registering in local hotels/motels was 223/100,000 which is significantly greater than the incidence of suicide in the general population of King County (11.7/100,000 p Hotel/motel guests from outside Washington had a significantly reduced incidence of suicide (3.9/100,000 p = 0.002). The study results suggest that there is an increased risk of suicide in local residents who register in local hotel rooms.

Retrospective forecasts of the upcoming winter season snow accumulation in the Inn headwaters (European Alps)

Science.gov (United States)

Förster, Kristian; Hanzer, Florian; Stoll, Elena; Scaife, Adam A.; MacLachlan, Craig; Schöber, Johannes; Huttenlau, Matthias; Achleitner, Stefan; Strasser, Ulrich

2018-02-01

This article presents analyses of retrospective seasonal forecasts of snow accumulation. Re-forecasts with 4 months' lead time from two coupled atmosphere-ocean general circulation models (NCEP CFSv2 and MetOffice GloSea5) drive the Alpine Water balance and Runoff Estimation model (AWARE) in order to predict mid-winter snow accumulation in the Inn headwaters. As snowpack is hydrological storage that evolves during the winter season, it is strongly dependent on precipitation totals of the previous months. Climate model (CM) predictions of precipitation totals integrated from November to February (NDJF) compare reasonably well with observations. Even though predictions for precipitation may not be significantly more skilful than for temperature, the predictive skill achieved for precipitation is retained in subsequent water balance simulations when snow water equivalent (SWE) in February is considered. Given the AWARE simulations driven by observed meteorological fields as a benchmark for SWE analyses, the correlation achieved using GloSea5-AWARE SWE predictions is r = 0.57. The tendency of SWE anomalies (i.e. the sign of anomalies) is correctly predicted in 11 of 13 years. For CFSv2-AWARE, the corresponding values are r = 0.28 and 7 of 13 years. The results suggest that some seasonal prediction of hydrological model storage tendencies in parts of Europe is possible.

Temperature profiles from expendable bathythermograph (XBT) casts from the USCGC DALLAS in the North Atlantic Ocean in support of the Integrated Global Ocean Services System (IGOSS) from 1976-04-27 to 1976-05-02 (NODC Accession 7601084)

Data.gov (United States)

National Oceanic and Atmospheric Administration, Department of Commerce — XBT data were collected from the USCGC DALLAS in support of the Integrated Global Ocean Services System (IGOSS). Data were collected by the US Coast Guard from 27...

Temperature profiles from expendable bathythermograph (XBT) casts from the USCGC DALLAS in the North Atlantic Ocean in support of the Integrated Global Ocean Services System (IGOSS) from 1976-03-10 to 1976-03-28 (NODC Accession 7600862)

Data.gov (United States)

National Oceanic and Atmospheric Administration, Department of Commerce — XBT data were collected from the USCGC DALLAS in support of the Integrated Global Ocean Services System (IGOSS). Data were collected by the US Coast Guard from 10...

Structural and electronic properties of InN epitaxial layer grown on c-plane sapphire by chemical vapor deposition technique

Energy Technology Data Exchange (ETDEWEB)

Barick, Barun Kumar, E-mail: bkbarick@gmail.com; Prasad, Nivedita; Saroj, Rajendra Kumar; Dhar, Subhabrata [Department of Physics, Indian Institute of Technology, Bombay, Mumbai 400076 (India)

2016-09-15

Growth of InN epilayers on c-plane sapphire substrate by chemical vapor deposition technique using pure indium metal and ammonia as precursors has been systematically explored. It has been found that [0001] oriented indium nitride epitaxial layers with smooth surface morphology can be grown on c-plane sapphire substrates by optimizing the growth conditions. Bandgap of the film is observed to be Burstein–Moss shifted likely to be due to high background electron concentration. It has been found that the concentration of this unintentional doping decreases with the increase in the growth temperature and the ammonia flux. Epitaxial quality on the other hand deteriorates as the growth temperature increases. Moreover, the morphology of the deposited layer has been found to change from flat top islands to faceted mounds as the flow rate of ammonia increases. This phenomenon is expected to be related to the difference in surface termination character at low and high ammonia flow rates.

Compilation of the opinions expressed by the CCTN in 1997; Raccolta dei pareri espressi dalla CCTN nel 1997

Energy Technology Data Exchange (ETDEWEB)

Camoni, I [Istituto Superiore di Sanita` , Rome (Italy). Lab. di Tossicologia Applicata; Mucci, N [ISPESL, Monteporzio Catone, Rome (Italy). Dipt. di Medicina del Lavoro

1999-12-31

The advice expressed by the Italian National Advisory Toxicological Committee (CCTN) in 1997 are presented. Among the most important advice, the following may be mentioned: (1) air quality criteria for CO and NO{sub 2}; (2) risk evaluation associated to the presence of mixtures of pesticide residues in food; (3) re-evaluations of the toxic properties of DDT; (4) evaluations of the carcinogenic evidences of several active substances of antiblastic drugs. [Italiano] Vengono presentati i pareri espressi dalla Commissione Consultiva Tossicologica Nazionale (CCTN) nel 1997. Tra i piu` importanti possono essere menzionati i pareri riguardanti: 1) criteri di qualita` dell`aria per il CO e l`NO{sub 2}; 2) rischio tossicologico da residui di miscele di pesticidi presenti negli alimenti; 3) rivalutazione delle proprieta` tossiche del DDT; 4) valutazione dell`evidenza di cancerogenita` di alcuni principi attivi di chemioterapici antiblastici.

Compilation of the opinions expressed by the CCTN in 1997; Raccolta dei pareri espressi dalla CCTN nel 1997

Energy Technology Data Exchange (ETDEWEB)

Camoni, I. [Istituto Superiore di Sanita`, Rome (Italy). Lab. di Tossicologia Applicata; Mucci, N. [ISPESL, Monteporzio Catone, Rome (Italy). Dipt. di Medicina del Lavoro

1998-12-31

The advice expressed by the Italian National Advisory Toxicological Committee (CCTN) in 1997 are presented. Among the most important advice, the following may be mentioned: (1) air quality criteria for CO and NO{sub 2}; (2) risk evaluation associated to the presence of mixtures of pesticide residues in food; (3) re-evaluations of the toxic properties of DDT; (4) evaluations of the carcinogenic evidences of several active substances of antiblastic drugs. [Italiano] Vengono presentati i pareri espressi dalla Commissione Consultiva Tossicologica Nazionale (CCTN) nel 1997. Tra i piu` importanti possono essere menzionati i pareri riguardanti: 1) criteri di qualita` dell`aria per il CO e l`NO{sub 2}; 2) rischio tossicologico da residui di miscele di pesticidi presenti negli alimenti; 3) rivalutazione delle proprieta` tossiche del DDT; 4) valutazione dell`evidenza di cancerogenita` di alcuni principi attivi di chemioterapici antiblastici.

An Overview of the Geological and Geotechnical Aspects of the New Railway Line in the Lower Inn Valley

Science.gov (United States)

Eder, Stefan; Poscher, Gerhard; Sedlacek, Christoph

The new railway line in the lower Inn-valley is part of the Brenner railway axis from Munich to Verona (feeder north). The first section between the villages of Kundl and Radfeld, west of Wörgl, and the village of Baumkirchen, east of Innsbruck, will become one of the biggest infrastructure projects ever built in Austria, with a length of approx. 43 km and an underground portion of approx. 80%. The article gives an overview of the various geologic formations - hard rock sections in the valley slopes, different water-saturated gravel and sand formations in the valley floor and geotechnically difficult conditions in sediments of Quaternary terraces. It also describes the methodology of the soil reconnaissance using groundwater models for hydrogeologic estimations, core drillings for evaluating geologic models and describes the experiences gained from the five approx. 7.5 km long reconnaissance tunnels for geotechnical and hydrogeological testing. The results of the soil reconnaissance were used to plan different construction methods, such as excavation in soft rock under a jet grouting roof and compressed-air, as well as mechanised shield with fluid support.

Validation of a simple distributed sediment delivery approach in selected sub-basins of the River Inn catchment area

Science.gov (United States)

Reid, Lucas; Kittlaus, Steffen; Scherer, Ulrike

2015-04-01

For large areas without highly detailed data the empirical Universal Soil Loss Equation (USLE) is widely used to quantify soil loss. The problem though is usually the quantification of actual sediment influx into the rivers. As the USLE provides long-term mean soil loss rates, it is often combined with spatially lumped models to estimate the sediment delivery ratio (SDR). But it gets difficult with spatially lumped approaches in large catchment areas where the geographical properties have a wide variance. In this study we developed a simple but spatially distributed approach to quantify the sediment delivery ratio by considering the characteristics of the flow paths in the catchments. The sediment delivery ratio was determined using an empirical approach considering the slope, morphology and land use properties along the flow path as an estimation of travel time of the eroded particles. The model was tested against suspended solids measurements in selected sub-basins of the River Inn catchment area in Germany and Austria, ranging from the high alpine south to the Molasse basin in the northern part.

Annual Review of BPA-Funded Projects in Natural and Artificial Propagation of Salmonids, March 27-29, 1985, Holiday Inn Airport, Portland, Oregon.

Energy Technology Data Exchange (ETDEWEB)

United States. Bonneville Power Administration.

1985-04-01

The Fish and Wildlife Division of Bonneville Power Administration (BPA) hosted a meeting for contractors to present the results of fiscal year 1984 research conducted to implement the Northwest Power Planning Council's Fish and Wildlife Program. The meeting focused on those projects specifically related to natural and artificial propagation of salmonids. The presentations were held at the Holiday Inn Airport in Portland, Oregon, on March 27-29, 1985. This document contains abstracts of the presentations from that meeting. Section 1 contains abstracts on artificial propagation, fish health, and downstream migration, and Section 2 contains abstracts on natural propagation and habitat improvement. The abstracts are indexed by BPA Project Number and by Fish and Wildlife Program Measure. The registered attendees at the meeting are listed alphabetically in Appendix A and by affiliation in Appendix B.

New Record of Leptoglossus zonatus (Dallas (Heteroptera: Coreidae Attacking Starfruit (Averrhoa carambola L. in Sinop, Mato Grosso, Brazil

Directory of Open Access Journals (Sweden)

Evaldo Pires

2011-03-01

Resumo. Leptoglossus zonatus (Dallas (Heteroptera: Coreidae um percevejo fitófago amplamente encontrado no continente Americano. Essa espécie encontra-se associada a diversas culturas agrícolas, onde se estabelecem devido a oferta de alimento e de condições favoráveis ao seu desenvolvimento. O objetivo foi registrar a ocorrência de L. zonatus atacando frutos de carambola em Sinop, Mato Grosso, Brasil e relatar nova planta hospedeira para esse percevejo. Adultos e imaturos foram encontrados durante os meses de setembro a novembro de 2009, atacando frutos de carambola (Averrhoa carambola L. no município de Sinop, Mato Grosso, Brasil. O ataque desse percevejo prejudica a qualidade dos frutos, permitindo que outros insetos como dípteros da família Phoridae tenham acesso a secreções do fruto pelo orifício feito pelo estilete desse percevejo, causando assim, danos na qualidade da carambola.

The link between bond forfeiture and pretrial release mechanism: The case of Dallas County, Texas.

Science.gov (United States)

Clipper, Stephen J; Morris, Robert G; Russell-Kaplan, Amanda

2017-01-01

The goal of this study was to evaluate the efficacy of four pretrial jail release mechanisms (i.e., bond types) commonly used during the pretrial phase of the criminal justice process in terms of their ability to discriminate between defendants failing to appear in court (i.e., bond forfeiture). These include attorney bonds, cash bonds, commercial bail bonds, and release via a pretrial services agency. A multi-treatment propensity score matching protocol was employed to assess between-release-mechanism differences in the conditional probability of failure to appear/bond forfeiture. Data were culled from archival state justice records comprising all defendants booked into the Dallas County, Texas jail during 2008 (n = 29,416). The results suggest that defendants released via commercial bail bonds were less likely to experience failure to appear leading to the bond forfeiture process compared to equivalent defendants released via cash, attorney, and pretrial services bonds. This finding held across different offense categories. The study frames these differences within a discussion encompassing procedural variation within and between each release mechanism, thereby setting the stage for further research and dialog regarding potential justice reform.

The link between bond forfeiture and pretrial release mechanism: The case of Dallas County, Texas.

Directory of Open Access Journals (Sweden)

Stephen J Clipper

Full Text Available The goal of this study was to evaluate the efficacy of four pretrial jail release mechanisms (i.e., bond types commonly used during the pretrial phase of the criminal justice process in terms of their ability to discriminate between defendants failing to appear in court (i.e., bond forfeiture. These include attorney bonds, cash bonds, commercial bail bonds, and release via a pretrial services agency.A multi-treatment propensity score matching protocol was employed to assess between-release-mechanism differences in the conditional probability of failure to appear/bond forfeiture. Data were culled from archival state justice records comprising all defendants booked into the Dallas County, Texas jail during 2008 (n = 29,416.The results suggest that defendants released via commercial bail bonds were less likely to experience failure to appear leading to the bond forfeiture process compared to equivalent defendants released via cash, attorney, and pretrial services bonds. This finding held across different offense categories. The study frames these differences within a discussion encompassing procedural variation within and between each release mechanism, thereby setting the stage for further research and dialog regarding potential justice reform.

Dgroup: DG01664 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available /INN) D06070 ... Tenecteplase (USAN/INN) ... D05412 ... Monteplase (INN); Monteplase (genetical recombination) (JAN...) ... D05410 ... Pamiteplase (INN); Pamiteplase (genetical recombination) (JAN) D0825...6 ... Nateplase (INN) D03695 ... Desmoteplase (USAN/INN) D04665 ... Lanoteplase (USAN/INN); Lanoteplase (genetical re...combination) (JAN) D09814 ... Silteplase (INN); Silteplase (genetical recombination) (JAN) D09823 ... Duteplase (INN); Duteplase (genetica... DG01664 DGroup Tissue plasminogen activator (t-PA) -teplase ... D02837 ... Alteplase (USP/INN); Alteplase (geneti

Dgroup: DG01707 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available gen activator (t-PA) ... D02837 ... Alteplase (USP/INN); Alteplase (genetical recombination) (JAN) ... D02947 ... Ani...streplase (USAN/INN) ... D05721 ... Reteplase (USAN/INN) ... D06070 ... Tenecteplase (USAN/INN) ... D05412 ... Monteplase (INN); Monteplase (genetic...al recombination) (JAN) ... D05410 ... Pamiteplase (INN); Pamiteplase (genetica... ... Lanoteplase (USAN/INN); Lanoteplase (genetical recombination) (JAN) ... D09814 ... Silteplase (INN); Silteplase (genetica...l recombination) (JAN) ... D09823 ... Duteplase (INN); Duteplase (genetical re

Phytophagy of the predator Podisus nigrispinus (Dallas, 1851 (Hemiptera: Pentatomidae fed on prey and Brassicaceae

Directory of Open Access Journals (Sweden)

J. F. J. Grigolli

2017-03-01

Full Text Available Abstract The purpose of this study was to investigate the development and reproduction of the zoophytophagous predator Podisus nigrispinus (Dallas (Heteroptera: Pentatomidae fed kale, broccoli and cabbage affects its. Nymphs and adults of this predator were fed on larvae of Plutella xylostella (L. (Lepidoptera: Plutellidae as prey with kale, cabbage, or broccoli. In the nymph period, the duration and prey consumption were similar with all the Brassicacea cultivar. However, nymph viability was higher for predators with broccoli leaves. The mean weight of 5th-instar nymphs, newly emerged females and the sex ratio were similar among the Brassicacea cultivars, while newly emerged males were heavier with kale and broccoli leaves. The supply of broccoli leaves resulted in greater oviposition, higher number of eggs per egg mass and longer longevity of P. nigrispinus males and females. Furthermore, the consumption of P. xylostella larvae by adult predators was higher with these cultivars. The net reproductive rate (R0 and mean generation time (T were highest for predators with prey and broccoli leaves. The reproductive parameters of P. nigrispinus were enhanced when fed on P. xylostella larvae with and broccoli leaves, which can be an alternative diet in laboratory rearing of this predator.

Development of ZnO:Al-based transparent contacts deposited at low-temperature by RF-sputtering on InN layers

Energy Technology Data Exchange (ETDEWEB)

Fernandez, S. [Departamento de Energias Renovables, Energia Solar Fotovoltaica, Centro de Investigaciones Energeticas, Medioambientales y Tecnologicas (CIEMAT), Avda. Complutense 22, 28040 Madrid (Spain); Naranjo, F.B.; Valdueza-Felip, S. [Grupo de Ingenieria Fotonica, Departamento de Electronica, Escuela Politecnica Superior, Universidad de Alcala Campus Universitario, 28871 Alcala de Henares, Madrid (Spain); Abril, O. de [ISOM and Departamento de Fisica Aplicada, Escuela Tecnica Superior de Ingenieros de Telecomunicacion, Universidad Politenica de Madrid, Ciudad Universitaria s/n, 28040 Madrid (Spain)

2012-03-15

Nitride semiconductors (Al,Ga,In)N attain material properties that make them suitable for photovoltaic and optoelectronics devices to be used in hard environments. These properties include an energy gap continuously tuneable within the energy range of the solar spectrum, a high radiation resistance and thermal stability. The developing of efficient devices requires contacts with low resistivity and high transmittance in visible region. ZnO:Al (AZO) emerges as a feasible candidate for transparent contact to nitride semiconductors, taking advantage of its low resistivity, high transparency in visible wavelengths and a very low lattice mismatch with respect to nitride semiconductors. This work presents a study of the applications of AZO films deposited at low-temperature by RF magnetron sputtering as transparent contact for InN layers. The optimization of AZO conditions deposition lead to the obtaining of contacts which shows an ohmic behaviour for the as-deposited layer, regardless the thickness of the ZnO:Al contact layer. Specific contact resistances of 1.6 {omega}.cm{sup 2} were achieved for the contact with 90 nm thick ZnO:Al layer without any post-deposition treatment (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Dgroup: DG01709 [KEGG MEDICUS

Lifescience Database Archive (English)

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Gender Hierarchy Among Gujarati Immigrants: Linking Immigration Rules and Ethnic Norns

OpenAIRE

Assar, Nandini Narain

2000-01-01

Immigration policy and tradition dovetail in their impact on the social organization of immigrant communities, linking the material and non-material aspects of gender. I focus on Asian Indian Patels, who dominate the budget motel business in the United States. I conducted semi-structured interviews with Patel men, women, and teenagers. I stayed overnight in the motels to observe families at work. I was almost always invited to prepare and share a meal, so I observed families at home. My ...

Distribution of air pollutants in the Inn Valley atmosphere during high concentration events in winter 2006

International Nuclear Information System (INIS)

Schnitzhofer, R.; Norman, M; Dunkl, J.; Wistaler, A.; Hansel, A.; Neininger, B.; Gohm, A.

2006-01-01

Full text: The goal of the INNOX field campaign, which took place during January and February 2006 near the town of Schwaz, was to obtain a three-dimensional picture of the spatial distribution of air pollutants in the Inn Valley during wintertime. For this purpose continuous ground based measurements and, on six chosen days, vertical profiles within the lowest 200 m above ground level (AGL) of the valley atmosphere of certain VOCs (benzene, toluene, etc.) and CO were performed using a proton-transfer-reaction mass spectrometry instrument (PTR-MS). For the soundings a 200-m long teflon line was fixed on a tethered balloon through which the air was sucked to the PTR-MS instrument and to a CO analyser. Next to the inlet on the tethered balloon meteorological data, such as air temperature, pressure, wind, were measured as well. Above the lowest 200 m AGL a research aircraft from MetAir AG (Switzerland), equipped with various instruments for in-situ measurements of air pollutants and meteorological data, was operated. A typical flight pattern consisted of five vertical cross sections between about 150 to 2500 m AGL and lasted about three hours. Altogether 25 hours of aircraft measurements were carried out on six different days. The combination of low-level balloon measurements and upper-level aircraft observations yields vertical profiles of various parameters which cover the whole valley atmosphere. Preliminary results which show strong vertical but also horizontal gradients of air pollutant concentrations will be presented. (author)

A land-use and water-quality history of White Rock Lake Reservoir, Dallas, Texas, based on paleolimnological analyses

Science.gov (United States)

Platt, Bradbury J.; Van Metre, P.C.

1997-01-01

White Rock Lake reservoir in Dallas, Texas contains a 150-cm sediment record of silty clay that documents land-use changes since its construction in 1912. Pollen analysis corroborates historical evidence that between 1912 and 1950 the watershed was primarily agricultural. Land disturbance by plowing coupled with strong and variable spring precipitation caused large amounts of sediment to enter the lake during this period. Diatoms were not preserved at this time probably because of low productivity compared to diatom dissolution by warm, alkaline water prior to burial in the sediments. After 1956, the watershed became progressively urbanized. Erosion decreased, land stabilized, and pollen of riparian trees increased as the lake water became somewhat less turbid. By 1986 the sediment record indicates that diatom productivity had increased beyond rates of diatom destruction. Neither increased nutrients nor reduced pesticides can account for increased diatom productivity, but grain size studies imply that before 1986 diatoms were light limited by high levels of turbidity. This study documents how reservoirs may relate to land-use practices and how watershed management could extend reservoir life and improve water quality.

Nested hyper-resolution modeling of urban areas for the National Water Model - The Dallas-Fort Worth Testbed

Science.gov (United States)

Noh, S. J.; Kim, S.; Habibi, H.; Seo, D. J.; Welles, E.; Philips, B.; Adams, E.; Smith, M. B.; Wells, E.

2017-12-01

With the development of the National Water Model (NWM), the NWS has made a step-change advance in operational water forecasting by enabling high-resolution hydrologic modeling across the US. As a part of a separate initiative to enhance flash flood forecasting and inundation mapping capacity, the NWS has been mandated to provide forecasts at even finer spatiotemporal resolutions when and where such information is demanded. In this presentation, we describe implementation of the NWM at a hyper resolution over a nested domain. We use WRF-Hydro as the core model but at significantly higher resolutions with scale-commensurate model parameters. The demonstration domain is multiple urban catchments within the Cities of Arlington and Grand Prairie in the Dallas-Fort Worth Metroplex. This area is susceptible to urban flooding due to the hydroclimatology coupled with large impervious cover. The nested model is based on hyper-resolution terrain data to resolve significant land surface features such as streets and large man-made structures, and forced by the high-resolution radar-based quantitative precipitation information. In this presentation, we summarize progress and preliminary results and share issues and challenges.

Solar heating and hot water system installed at office building, One Solar Place, Dallas, Texas. Final report

Energy Technology Data Exchange (ETDEWEB)

1980-06-01

This document is the Final Report of the Solar Energy System Installed at the First Solar Heated Office Building, One Solar Place, Dallas, Texas. The Solar System was designed to provide 87 percent of the space heating needs, 100 percent of the potable hot water needs and is sized for future absorption cooling. The collection subsystem consists of 28 Solargenics, series 76, flat plate collectors with a total area of 1596 square feet. The solar loop circulates an ethylene glycol-water solution through the collectors into a hot water system heat exchanger. The hot water storage subsystem consists of a heat exchanger, two 2300 gallon concrete hot water storage tanks with built in heat exchangers and a back-up electric boiler. The domestic hot water subsystem sends hot water to the 10,200 square feet floor area office building hot water fixtures. The building cold water system provides make-up to the solar loop, the heating loop, and the hot water concrete storage tanks. The design, construction, cost analysis, operation and maintenance of the solar system are described. The system became operational July 11, 1979.

Tabelas de fertilidade e de esperança de vida de Tynacantha marginata Dallas (Heteroptera, Pentatomidae, Asopinae alimentado com larvas de Tenebrio molitor L. (Coleoptera, Tenebrionidae e folhas de Eucalyptus urophylla S.T. Blake Life and fecundity tables of the predator Tynacantha marginata Dallas (Heteroptera, Pentatomidae reared with Tenebrio molitor L. larvae (Coleoptera, Tenebrionidae and Eucalyptus urophylla S.T. Blake leaves

Directory of Open Access Journals (Sweden)

Luciano Andrade Moreira

1995-01-01

Full Text Available The objective of this research was to study the effect of feeding on Eucalyptus leaves on the life and fecundity tables of Tynacantha marginata Dallas, 1851 (Heteroptera: Pentatomidae. Higher mortality of this predator occurred during second week of life, when the nymphs were starting second instar. The fecundity table showed that the nymphal period of T. marginata lasted four weeks, with viability of 57,9% and total longevity of 21 weeks. Egg oviposition period took 10 weeks. The population parameters (R0, rm and λ showed a 50.69 times populational increase after one generation.

Dgroup: DG01493 [KEGG MEDICUS

Lifescience Database Archive (English)

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Analysis of Atmospheric Mercury and Associated Trace Gases in Dallas Fort Worth, TX (Barnett Shale area)

Science.gov (United States)

Laine, P. L.; Talbot, R. W.; Lefer, B. L.; Flynn, J. H.

2012-12-01

Throughout the month of June 2011, a variety of air quality measurements were obtained in the Dallas Fort Worth (Barnett Shale) field campaign. Species such as Hg0, O3, CO, NO, NO2, SO2 were monitored continuously along with a variety of volatile organic carbon (VOC) species ranging in size from C2 (ethane) to C9 aromatics to sesquiterpines. Mixed layer boundary heights were also monitored by Ceilometer measurements. At first glance, the mercury data has peaks that reach as high as 750 ppqv (parts per quadrillion by volume) which is approximately a 5 fold increase over the typical background values observed (~ 150 ppqv). The Fort Worth area has underlying Barnett Shale with thousands of natural gas compressor stations scattered throughout the surrounding landscape. We believe that a potential source of the elevated Hg0 is the result of leakage from these stations under the nocturnal boundary layer. A closer look at diurnal variations and backward wind trajectories will yield information pertaining to the types of air masses spanning the area. We will utilize the suite of chemical and meteorological measurements conducted during the campaign to facilitate source identification for specific time periods. Analysis of these data should provide new information on as yet unexplored sources of atmospheric mercury.

Stress indotto dalla guida di autoveicoli: studio di parametri psicofisiologici

Directory of Open Access Journals (Sweden)

R. Vivoli

2003-05-01

Full Text Available

La guida di un autoveicolo, specie in condizioni di intenso traffico o di cattive condizioni meteoclimatiche, è considerata uno dei principali fattori stressanti della vita odierna. Durante la guida si possono infatti osservare significative risposte simpatoadrenergiche e cardiovascolari con la comparsa anche di episodi coronarici. Tali risposte presentano un’ampia variabilità interindividuale in quanto sono influenzate da vari fattori (stile di vita, personalità etc..

In questa rassegna, vengono presentati i principali risultati degli studi da noi condotti sulle risposte psicofisiologiche indotte dalla guida di diversi tipi di autoveicoli. In conducenti di autobus urbani è stato registrato un sensibile aumento del tasso urinario di adrenalina durante il turno lavorativo rispetto alla stessa fascia oraria di un giorno di riposo. Tale risposta adrenergica era esaltata dall’abitudine tabagica e dall’assunzione di caffè e bevande alcoliche. In soggetti che alla guida di camion coprono lunghe distanze, i più elevati tassi urinari di catecolamine e i più alti livelli di frequenza cardiaca sono stati registrati quando la guida era particolarmente stressante per la presenza di nebbia o di intenso traffico. In soggetti che partecipano, a livello amatoriale, a manifestazioni agonistiche di velocità su pista, abbiamo osservato che durante la gara, rispetto al periodo pre-gara, l’escrezione urinaria di catecolamine aumenta in misura molto rilevante. Analogamente a quanto osservato in autisti di camion, l’attivazione del sistema adrenergico è risultata direttamente associata ai livelli di ansietà. Dall’elettrocardiogramma dinamico è emerso che durante la gara la frequenza cardiaca raggiunge un valore medio di 163.5±7.4 battiti/min. (range: 146,180 battiti/min..

Un significativo peggioramento della percezione visiva stereoscopica, con potenziale ricaduta negativa sulla performance dei guidatori, è stato osservato in

Dgroup: DG01491 [KEGG MEDICUS

Lifescience Database Archive (English)

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Lifescience Database Archive (English)

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Dalla disciplina del progetto, le ragioni di un percorso magistrale di studi in interaction design

Directory of Open Access Journals (Sweden)

Alessandra Bosco

2014-04-01

Full Text Available ITLa trasformazione del ruolo e della professione del designer nella condizione socio-economica culturale contemporanea, contraddistinta da una molteplicità di stimoli visivi, dal sovraffollamento dei prodotti, dall’uso di nuove tecnologie e dalla pervasività dei device, orienta la scelta di indirizzare un percorso di studi magistrale nell’ambito multidisciplinare dell’interaction design. La formazione specifica che si articola in maniera sinergica tra laboratori e corsi teorici trova fondamento nelle discipline dello human factors, delle teorie dell’interazione e della critica del design. Il paper argomenta le ragioni, i metodi e le scelte effettuate dal gruppo di docenti che tra il 2010 e il 2014 ha progettato tale percorso didattico all’Università degli Studi della Repubblica di San Marino.ENThe transformation of the designer’s role in the contemporary social, economic and cultural context, characterized by a growing overload of visual stimuli, new technological products, and a multitude of pervasive mobile devices, led the decision to steer the graduate degree programme in design towards the multidisciplinary field of interaction design. This specific branch of learning builds its fundamentals in the synergetic teaching of theoretical and studio courses focusing on human factors, theories of interaction and design criticism. This paper investigates the motivations, the methods and the choices made by a group of professors of the University of the Republic of San Marino to create a new graduate programme in interaction design.

Dgroup: DG01457 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available fine granules (JP17); Ifenprodil tartrate tablets (JP17) ... DG00320 ... Labetalol ... D08106 ... Labetalol (INN) ... D0...zide (JP17/USP/INN) ... D00561 ... Sertindole (USAN/INN) D01674 ... Naftopidil (JP17/INN); Naftopidil tablets (JP17...); Naftopidil orally disintegrating tablets (JP17) ... D01965 ... Silodosin (JP17/INN) ... D02995 ... Asenapine male

Dgroup: DG01635 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available D00896 ... Efavirenz (JAN/INN) ... D01615 ... Dexamethasone palmitate (JAN) ... D01832 ... Moda...finil (JAN/USAN/INN) ... D03012 ... Avasimibe (USAN/INN) D03215 ... Armodafinil (USAN/INN) ... D03669 ... Deferasir

Dgroup: DG01554 [KEGG MEDICUS

Lifescience Database Archive (English)

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Dgroup: DG02018 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available 03546 ... Clofarabine (JAN/USAN/INN) ... D05134 ... Nelarabine (JAN/USAN/INN); Nelzarabine (USAN) ... DG00686 ... C... ... D01651 ... Ancitabine hydrochloride (JAN) ... D04134 ... Fazarabine (USAN/INN) ... D04233 ... Flurocitabine (USAN/INN)

Cardiovascular risk indicators and perceived race/ethnic discrimination in the Dallas Heart Study.

Science.gov (United States)

Albert, Michelle A; Ravenell, Joseph; Glynn, Robert J; Khera, Amit; Halevy, Nitsan; de Lemos, James A

2008-12-01

The objective of the study was to evaluate the association between race/ethnic (r/e) discrimination and subclinical cardiovascular disease (CVD). Although r/e discrimination is a chronic stressor that might have negative health effects, cardiovascular data related to experiences with discrimination among different r/e groups in the United States remain sparse. Using data from the Dallas Heart Study, we assessed the association between perceived r/e discrimination and traditional CVD risk factors, C-reactive protein (CRP), aortic plaque area and wall thickness, and coronary calcium (CAC) score among black, white, and Hispanic participants. Prevalent CAC was defined as a CAC score > or =10 Agatston units; CRP elevation was defined as > or =3 mg/L. Participants were asked, "Have you ever been discriminated against due to your race/ethnicity? (responses: yes, no, or don't know)". Blacks reported r/e discrimination more frequently than whites or Hispanics (P discrimination were more likely to be college graduates, to have a family history of myocardial infarction, and to be more physically active than blacks who did not report r/e discrimination (each P discrimination had a higher prevalence of smoking (P discrimination and aortic wall thickness, aortic plaque area, prevalent CAC, or elevated CRP in any of the r/e groups. Among blacks, stratification by gender and education did not change the observed relationship between perceived r/e discrimination and CAC or CRP. Although perceived r/e discrimination is associated with certain health characteristics that may result in negative health outcomes, in general, we found no association of r/e discrimination with either subclinical atherosclerosis as determined by CAC score, aortic wall thickness and aortic plaque area, or inflammation as assessed by elevated CRP levels.

Dgroup: DG01958 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available USP) ... D03546 ... Clofarabine (JAN/USAN/INN) ... D05134 ... Nelarabine (JAN/USAN/INN); Nelzarabine (USAN) ... DG...Enocitabine (JAN/INN) ... D01651 ... Ancitabine hydrochloride (JAN) ... D04134 ... Fazarabine (USAN/INN) ... D04233 ... Flu

Low Temperature Growth of In2O3and InN Nanocrystals on Si(111 via Chemical Vapour Deposition Based on the Sublimation of NH4Cl in In

Directory of Open Access Journals (Sweden)

Tsokkou Demetra

2009-01-01

Full Text Available Abstract Indium oxide (In2O3 nanocrystals (NCs have been obtained via atmospheric pressure, chemical vapour deposition (APCVD on Si(111 via the direct oxidation of In with Ar:10% O2at 1000 °C but also at temperatures as low as 500 °C by the sublimation of ammonium chloride (NH4Cl which is incorporated into the In under a gas flow of nitrogen (N2. Similarly InN NCs have also been obtained using sublimation of NH4Cl in a gas flow of NH3. During oxidation of In under a flow of O2the transfer of In into the gas stream is inhibited by the formation of In2O3around the In powder which breaks up only at high temperatures, i.e.T > 900 °C, thereby releasing In into the gas stream which can then react with O2leading to a high yield formation of isolated 500 nm In2O3octahedrons but also chains of these nanostructures. No such NCs were obtained by direct oxidation forT G < 900 °C. The incorporation of NH4Cl in the In leads to the sublimation of NH4Cl into NH3and HCl at around 338 °C which in turn produces an efficient dispersion and transfer of the whole In into the gas stream of N2where it reacts with HCl forming primarily InCl. The latter adsorbs onto the Si(111 where it reacts with H2O and O2leading to the formation of In2O3nanopyramids on Si(111. The rest of the InCl is carried downstream, where it solidifies at lower temperatures, and rapidly breaks down into metallic In upon exposure to H2O in the air. Upon carrying out the reaction of In with NH4Cl at 600 °C under NH3as opposed to N2, we obtain InN nanoparticles on Si(111 with an average diameter of 300 nm.

Dgroup: DG01439 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available ine (JAN/USAN/INN) ... D05134 ... Nelarabine (JAN/USAN/INN); Nelzarabine (USAN) ... DG00686 ... Cytarabine ... D00168 ... ...tabine hydrochloride (JAN) D04134 ... Fazarabine (USAN/INN) D04233 ... Flurocitabine (USAN/INN) D06100 ... Tezacitabi

Dgroup: DG01458 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available DG01458 DGroup Carbapenem -penem DG01458.gif DG00591 ... Meropenem ... D08185 ... Meropenem (INN) ... D02222 ... Meropene...m (USP); Meropenem hydrate (JP17) ... DG00592 ... Ertapenem ... D07908 ... Ertapenem (INN) ... D04049 ... Ertapene...m sodium (USAN) ... DG00593 ... Doripenem ... D03895 ... Doripenem (USAN/INN) ... D01836 ... Doripenem hydr...ate (JAN) ... DG01212 ... Imipenem ... D04515 ... Imipenem (INN) ... D00206 ... Imipenem (USP); Imipene...m hydrate (JP17) D01048 ... Panipenem (JP17/INN) D01057 ... Biapenem (JAN/USAN/INN) ... D01058 ... Lenapenem hyd

Influence of defects on the absorption edge of InN thin films: The band gap value

Science.gov (United States)

Thakur, J. S.; Danylyuk, Y. V.; Haddad, D.; Naik, V. M.; Naik, R.; Auner, G. W.

2007-07-01

We investigate the optical-absorption spectra of InN thin films whose electron density varies from ˜1017tõ1021cm-3 . The low-density films are grown by molecular-beam-epitaxy deposition while highly degenerate films are grown by plasma-source molecular-beam epitaxy. The optical-absorption edge is found to increase from 0.61to1.90eV as the carrier density of the films is increased from low to high density. Since films are polycrystalline and contain various types of defects, we discuss the band gap values by studying the influence of electron degeneracy, electron-electron, electron-ionized impurities, and electron-LO-phonon interaction self-energies on the spectral absorption coefficients of these films. The quasiparticle self-energies of the valence and conduction bands are calculated using dielectric screening within the random-phase approximation. Using one-particle Green’s function analysis, we self-consistently determine the chemical potential for films by coupling equations for the chemical potential and the single-particle scattering rate calculated within the effective-mass approximation for the electron scatterings from ionized impurities and LO phonons. By subtracting the influence of self-energies and chemical potential from the optical-absorption edge energy, we estimate the intrinsic band gap values for the films. We also determine the variations in the calculated band gap values due to the variations in the electron effective mass and static dielectric constant. For the lowest-density film, the estimated band gap energy is ˜0.59eV , while for the highest-density film, it varies from ˜0.60tõ0.68eV depending on the values of electron effective mass and dielectric constant.

Financial balance of the recovery of energy starting from the thermal-destruction; Bilancio economico del recupero di energia dalla termodistruzione

Energy Technology Data Exchange (ETDEWEB)

Macchi, E. [Milan Politecnico, Milan (Italy). Dipt. Energetica

2000-08-01

This work deals with the main economical, energetic and environmental aspects related to the energy recovery from the combustion of municipal solid waste, without studying the technological aspects, being these themes treated by other teachers of the energy recovery from municipal solid waste (political, authoritative, ecological, energetic and financial). It is clear the limited diffusion of the technology today achieved in our country, production and the contribution given to the tele heating from the municipal solid waste. Are then listed the main quantities that intervene in the financial evaluations (costs of investment, useful life of the plant, economical indexes, periods for implementation, operating efficiency, yield, reliability and availability of the plant, actual value of the electric and thermal power produced, revenues from waste disposal), pointing out the importance of the size of the plant, which is the real decisive element. Some explicative examples of the weight of several items are produced. The role of the energy obtained from municipal solid waste in the new electrical market liberalized is particularly studies, pointing out the advantages in comparison with the energy of conventional sources. At last, the potential of the <> plants is discussed. They conjugate the incineration of the municipal solid waste to the technology of the gas-fired combined cycles. [Italian] Il presente lavoro tratta le principali problematiche economiche, energetiche ed ambientali legate al recupero energetico dalla combustione di rifiuti solidi urbani, senza approfondirne gli aspetti tecnologici, essendo questi ultimi temi assegnati ad altri relatori del corso. Dapprima si illustrano le motivazioni a favore dell'effettuazione del recupero di energia da RSU (politiche-autorizzative, ecologiche, energetiche ed economiche). Si evidenzia la modesta diffusione raggiunta oggi nel nostro Paese dalla tecnologia, commentando i dati relativi alla potenza

Dgroup: DG01716 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available DG01716 DGroup Drugs for alcohol dependence ... DG00996 ... Acamprosate ... D07058 ... Acamprosate (INN) ... D02780 ... Acamprosate calcium (JAN/USAN) ... DG00997 ... Naltrexone ... D05113 ... Naltrexone (USAN/INN) ... D02095 ... Naltrexone hydrochloride (USP) ... DG00998 ... Nalmefene ... D05111 ... Nalmefene (USAN/INN) ... D02104 ... Nalmefene hydrochloride ... D10812 ... Nalmefene hydrochloride hydrate (JAN) DG01756 ... Ondelopran ... D10143 ... Ondelopran (USAN/INN) ... D10144 ... Ondelopran hydrochloride (USAN) D00123 ... Cyanamide (JP17) ... D00131 ... Disulfiram (JP17/USP/INN) ... D03288 ... Calcium carbimide (INN) Other ... DG01718 ... Drugs for addictive disorder ATC code: N07BB Drugs of addictive disorder ...

Influence of race/ethnicity on cardiovascular risk factors in polycystic ovary syndrome, the Dallas Heart Study.

Science.gov (United States)

Chang, Alice Y; Oshiro, June; Ayers, Colby; Auchus, Richard J

2016-07-01

Polycystic ovarian syndrome (PCOS) is estimated to affect up to 20% of women. PCOS is associated with insulin resistance and cardiovascular (CV) risk factors. We aimed to evaluate the impact of race/ethnicity on the prevalence of CV risk factors and subclinical predictors of CV events. Cross-sectional analysis of data collected by the Dallas Heart Study, an urban, population-based cohort oversampled for blacks. A previously described cohort of women with PCOS and control subjects of the same racial/ethnic group, matched for age and body mass index. Hormonal and clinical measures associated with PCOS and CV risk factors. The study included 117 women with PCOS and 204 controls. Women with PCOS had significant differences across racial/ethnic groups in the prevalence of hypertension, hypercholesterolaemia, hypertriglyceridaemia and impaired fasting glucose (P PCOS than controls after adjusting for race/ethnicity (odds ratio, 1·50 [95% CI, 1·03-2·30]; P = 0·04). However, we did not see an interaction of race/ethnicity that significantly changed CV risk factor prevalence between PCOS and controls. In addition, subclinical measures of CV disease were not different between women with PCOS vs controls, even among hypertensive women. Race/ethnicity affects the prevalence of CV risk factors for women with and without PCOS. However, race/ethnicity does not interact with PCOS to additionally increase CV risk factor prevalence or subclinical CV disease. © 2015 John Wiley & Sons Ltd.

Effect of Citrus floral extracts on the foraging behavior of the stingless bee Scaptotrigona pectoralis (Dalla Torre

Directory of Open Access Journals (Sweden)

Julieta Grajales-Conesa

2012-03-01

Full Text Available Effect of Citrus floral extracts on the foraging behavior of the stingless bee Scaptotrigona pectoralis (Dalla Torre. Stingless bees have an important role as pollinators of many wild and cultivated plant species in tropical regions. Little is known, however, about the interaction between floral fragrances and the foraging behavior of meliponine species. Thus we investigated the chemical composition of the extracts of citric (lemon and orange flowers and their effects on the foraging behavior of the stingless bee Scaptotrigona pectoralis. We found that each type of flower has its own specific blend of major compounds: limonene (62.9% for lemon flowers, and farnesol (26.5%, (E-nerolidol (20.8%, and linalool (12.7% for orange flowers. In the foraging experiments the S. pectoralis workers were able to use the flower extracts to orient to the food source, overlooking plates baited with hexane only. However, orange flower extracts were seemingly more attractive to these worker bees, maybe because of the particular blend present in it. Our results reveal that these fragrances are very attractive to S. pectoralis, so we can infer that within citric orchards they could be important visitors in the study area; however habitat destruction, overuse of pesticides and the competitive override by managed honeybees might have put at risk their populations and thus the ecological services they provide to us.

Morphology of female reproductive tract of the predator Podisus nigrispinus (Dallas (Heteroptera: Pentatomidae fed on different diets

Directory of Open Access Journals (Sweden)

Walkymário de Paulo Lemos

2005-01-01

Full Text Available The morphology of the reproductive tract of Podisus nigrispinus (Dallas females fed with Alabama argillacea (Hübner larvae, artificial diet, Tenebrio molitor L. larvae or Musca domestica L. larvae were studied. The reproductive tract of females of this species presented yellow coloration and independent of the diet, each ovary had seven ovarioles joined through terminal filaments and forming a bunch shape structure. The histological data revealed that the ovary of P. nigrispinus was of meroistic telotrophic type, with each individual ovariole divided in a terminal filament, a tropharium (trophic chamber, a vitellarium, and a pedicel. The prey type affected the development and morphometry of these structures. Females of P. nigrispinus fed with 3rd or 5th instar larvae of cotton leafworm (A. argillacea presented developed ovaries with ovarioles showing a great number of oocytes in advanced stages of development. Females fed with artificial diet presented atrophic ovaries and ovarioles practically without oocytes. Females fed with T. molitor or M. domestica showed ovaries in intermediary stage of development. The central ovariole was longer in females fed with 5th instar larvae of cotton leafworm and shorter in those fed with artificial diet. Most developed oocytes were observed in ovaries of females fed with 5th or 3rd instar larvae of cotton leafworm, and the majority of atrophic oocytes were found in females fed with artificial diet.Este estudo apresenta a morfologia do sistema reprodutor feminino de Podisus nigrispinus (Dallas alimentado com larvas de Alabama argillacea (Hübner, Musca domestica L. e de Tenebrio molitor L. ou dieta artificial. As gônadas internas desse predador apresentaram coloração amarelada e, independente da dieta, cada ovário apresentou sete ovaríolos unidos pelos filamentos terminais em uma estrutura em forma de cacho. A análise histológica revelou que o ovário de P. nigrispinus é do tipo meroístico telotr

Oxidation-reduction processes in ground water at Naval Weapons Industrial Reserve Plant, Dallas, Texas

Science.gov (United States)

Jones, S.A.; Braun, Christopher L.; Lee, Roger W.

2003-01-01

Concentrations of trichloroethene in ground water at the Naval Weapons Industrial Reserve Plant in Dallas, Texas, indicate three source areas of chlorinated solvents?building 1, building 6, and an off-site source west of the facility. The presence of daughter products of reductive dechlorination of trichloroethene, which were not used at the facility, south and southwest of the source areas are evidence that reductive dechlorination is occurring. In places south of the source areas, dissolved oxygen concentrations indicated that reduction of oxygen could be the dominant process, particularly south of building 6; but elevated dissolved oxygen concentrations south of building 6 might be caused by a leaking water or sewer pipe. The nitrite data indicate that denitrification is occurring in places; however, dissolved hydrogen concentrations indicate that iron reduction is the dominant process south of building 6. The distributions of ferrous iron indicate that iron reduction is occurring in places south-southwest of buildings 6 and 1; dissolved hydrogen concentrations generally support the interpretation that iron reduction is the dominant process in those places. The generally low concentrations of sulfide indicate that sulfate reduction is not a key process in most sampled areas, an interpretation that is supported by dissolved hydrogen concentrations. Ferrous iron and dissolved hydrogen concentrations indicate that ferric iron reduction is the primary oxidation-reduction process. Application of mean first-order decay rates in iron-reducing conditions for trichloroethene, dichloroethene, and vinyl chloride yielded half-lives for those solvents of 231, 347, and 2.67 days, respectively. Decay rates, and thus half-lives, at the facility are expected to be similar to those computed. A weighted scoring method to indicate sites where reductive dechlorination might be likely to occur indicated strong evidence for anaerobic biodegradation of chlorinated solvents at six sites

Dgroup: DG01620 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available DG01620 DGroup Tamoxifene-type antineoplastic -ifen(e) ... DG00734 ... Tamoxifen ... D08559 ... Tam...oxifen (INN) ... D00966 ... Tamoxifen citrate (JP17/USP) ... DG00735 ... Toremifene ... D08620 ... Toremifene (INN) ... D0...USAN/INN) D09380 ... Sivifene (USAN/INN) Other ... DG01619 ... Clomifene and tamoxifen derivative ... Antiestrogens or e

Dgroup: DG01465 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available D08064 ... Ifenprodil (INN) ... D01445 ... Ifenprodil tartrate (JP17); Ifenprodil tartrate fine granules (JP17); Ifenprodil tartrate tablet...NN) ... D00560 ... Pimozide (JP17/USP/INN) ... D00561 ... Sertindole (USAN/INN) ... D01674 ... Naftopidil (JP17/INN); Naftopidil tablet...s (JP17); Naftopidil orally disintegrating tablets (JP17) ... D019

Electron transport properties of indium oxide - indium nitride metal-oxide-semiconductor heterostructures

International Nuclear Information System (INIS)

Wang, C.Y.; Hauguth, S.; Polyakov, V.; Schwierz, F.; Cimalla, V.; Kups, T.; Himmerlich, M.; Schaefer, J.A.; Krischok, S.; Ambacher, O.; Morales, F.M.; Lozano, J.G.; Gonzalez, D.; Lebedev, V.

2008-01-01

The structural, chemical and electron transport properties of In 2 O 3 /InN heterostructures and oxidized InN epilayers are reported. It is shown that the accumulation of electrons at the InN surface can be manipulated by the formation of a thin surface oxide layer. The epitaxial In 2 O 3 /InN heterojunctions show an increase in the electron concentration due to the increasing band banding at the heterointerface. The oxidation of InN results in improved transport properties and in a reduction of the sheet carrier concentration of the InN epilayer very likely caused by a passivation of surface donors. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

High Resolution Flash Flood Forecasting Using a Wireless Sensor Network in the Dallas-Fort Worth Metroplex

Science.gov (United States)

Bartos, M. D.; Kerkez, B.; Noh, S.; Seo, D. J.

2017-12-01

In this study, we develop and evaluate a high resolution urban flash flood monitoring system using a wireless sensor network (WSN), a real-time rainfall-runoff model, and spatially-explicit radar rainfall predictions. Flooding is the leading cause of natural disaster fatalities in the US, with flash flooding in particular responsible for a majority of flooding deaths. While many riverine flood models have been operationalized into early warning systems, there is currently no model that is capable of reliably predicting flash floods in urban areas. Urban flash floods are particularly difficult to model due to a lack of rainfall and runoff data at appropriate scales. To address this problem, we develop a wide-area flood-monitoring wireless sensor network for the Dallas-Fort Worth metroplex, and use this network to characterize rainfall-runoff response over multiple heterogeneous catchments. First, we deploy a network of 22 wireless sensor nodes to collect real-time stream stage measurements over catchments ranging from 2-80 km2 in size. Next, we characterize the rainfall-runoff response of each catchment by combining stream stage data with gage and radar-based precipitation measurements. Finally, we demonstrate the potential for real-time flash flood prediction by joining the derived rainfall-runoff models with real-time radar rainfall predictions. We find that runoff response is highly heterogeneous among catchments, with large variabilities in runoff response detected even among nearby gages. However, when spatially-explicit rainfall fields are included, spatial variability in runoff response is largely captured. This result highlights the importance of increased spatial coverage for flash flood prediction.

Dgroup: DG01936 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available DG01936 DGroup TNF inhibitor ... D00742 ... Etanercept (USAN/INN); Etanercept (genetica...l recombination) (JAN); Etanercept (genetical recombination) [etanercept biosimilar 1] (JAN) ... D02598 ... Infl...iximab (USAN/INN); Infliximab (genetical recombination) (JAN); Infliximab (genetical recombination) [Inflixi...mab biosimilar1] (JAN); Infliximab (genetical recombination) [Infliximab biosimil...ar2] (JAN) ... D07436 ... Afelimomab (INN) D02597 ... Adalimumab (USAN/INN); Adalimumab (genetical recombination) (

Dgroup: DG01645 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available done (INN) ... D08122 ... Levomethadone hydrochloride DG01015 ... Hydroxychloroquine ... D08050 ... Hydroxychloroquine (INN) ... D02114 ... Hydroxychloroq...uine sulfate (JAN/USP) ... DG01021 ... Halofantrine ... D08033 ... Halofantrine (INN) ... D02485

The electronic band structures of InNxAs1-x, InNxSb1-x and InAsxSb1-x alloys

International Nuclear Information System (INIS)

Mohammad, Rezek; Katircioglu, Senay

2009-01-01

The band gap bowings of InN x As 1-x , InN x Sb 1-x , and InAs x Sb 1-x alloys defined by the optimized lattice constants are investigated using empirical tight binding (ETB) method. The present ETB energy parameters which take the nearest neighbor interactions into account with sp 3 d 2 basis are determined to be sufficient to provide a typical feature for the band gap bowings of the alloys. The band gap bowing parameter is found to be relatively large in both InN x As 1-x and InN x Sb 1-x compared to InAs x Sb 1-x alloys. Moreover, the variation of the fundamental band gaps of InN x Sb 1-x alloys is sharper than that of InN x As 1-x alloys for small concentrations of N. Besides, a small amount of nitrogen is determined to be more effective in InN x Sb 1-x than in InN x As 1-x alloys to decrease the corresponding effective masses of the electrons around Γ points

78 FR 34559 - Standard Instrument Approach Procedures, and Takeoff Minimums and Obstacle Departure Procedures...

Science.gov (United States)

2013-06-10

... specifies the types of SIAPs and the effective dates of the, associated Takeoff Minimums and ODPs. This... I), ILS RWY 13R (SA CAT II), Amdt 9 Dallas, TX, Dallas Love Field, ILS OR LOC Y RWY 13L, Amdt 32 Dallas, TX, Dallas Love Field, RNAV (GPS) Y RWY 13L, Amdt 1 Dallas, TX, Dallas Love Field, RNAV (GPS) Z...

Il Nuraghe S. Marco di Genuri (VS: riutilizzo e frequentazione di un edificio nuragico dalla fase punica all’età postclassica

Directory of Open Access Journals (Sweden)

Maria Lucia Atzeni

2017-01-01

Full Text Available Riassunto: Il complesso nuragico di San Marco (Medio Campidano sorge in prossimità di una chiesetta campestre consacrata al Santo omonimo a poche centinaia di metri dalla periferia Est del centro abitato, alla base del costone sudoccidentale della Giara di Gesturi. Le indagini archeologiche, avviate nel 2001 e attualmente in corso, hanno dato modo di verificare la frequentazione e la composita sovrapposizione abitativa cui il complesso nuragico e l’area ad esso limitrofa sono stati interessati nel corso dei secoli, dall’età nuragica all’alto Medioevo. Abstract: The nuragic complex of San Marco (Medio Campidano is located in proximity of a consecrate rural church to the Saint with the same name a few hundred meters from the E outskirts of the inhabited center rising downstream himself stately of the SW side of the Giara of Gesturi. The archaeological investigations developed him, to various resumptions, from 2001 and currently still in progress, they have given way of verifying the populating and the composite housing overlap which the nuragic complex and the area to it neighboring they have been interested during the centuries from the nuragic age to the tall middle age.

30 CFR 701.5 - Definitions.

Science.gov (United States)

2010-07-01

... limited to, construction practices, siting requirements, vegetative selection and planting requirements...) Retail or trade of goods or services, including hotels, motels, stores, restaurants, and other commercial...

Dgroup: DG02000 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available AN/INN) DG01828 ... Deleobuvir ... D10554 ... Deleobuvir (USAN/INN) ... D10622 ... Deleobuvir sodium (JAN/USAN) D10477 ... Mericitabine (USAN/INN) Antiviral ... Treatment of hepatitis C NS5B polymerase ...

Status report on direct heat and low temperature utilization of geothermal energy in New Zealand

International Nuclear Information System (INIS)

Lumb, J.T.; Clelland, L.

1990-01-01

The Tasman Pulp and Paper Company's mill at Kawerau continues to be the dominant direct user of geothermal energy in New Zealand. Recent plant changes have increased the effectiveness of the company's use of the resource. Other uses are relatively small in scale and include air and water heating for homes, motels and other commercial and industrial premises. Commercial swimming-pool complexes and pools at hotels, motels and private homes are the other major direct users. This paper reports that overall direct use of the resource has shown a slow increase during the last five years except at Rotorua where the enforced closure of bores has led to more than 70% reduction in use

Dgroup: DG01752 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available (USAN/INN); Interferon alfa-2a (genetical recombination) (JAN) ... D02745 ... Interferon alfa-2b (USAN); Interferon alfa-2b (genetica... Interferon alfa-n3 (USAN) DG01751 ... Interferon beta ... D00746 ... Interferon beta-1b (USAN/INN); Interferon beta-1b (genetica...D00747 ... Interferon gamma-1b (USAN/INN) ... D03357 ... Interferon gamma-1a (genetical recombination) (JAN) ... D...08805 ... Interferon gamma-n1 (JAN) D02744 ... Interferon alfacon-1 (USAN/INN); Interferon alfacon-1 (genetical re...combination) (JAN) D02747 ... Peginterferon alfa-2a (USAN/INN); Peginterferon alfa-2a (genetica

76 FR 15553 - National Emission Standards for Hazardous Air Pollutants for Area Sources: Industrial, Commercial...

Science.gov (United States)

2011-03-21

... firms to operate and maintain the emissions control systems. Consistent with the legislative history, we... stores/malls, laundries, apartments, restaurants, and hotels/motels. The institutional boiler source...

Dgroup: DG01642 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available 7/USAN/INN); Fluconazole capsules (JP17) ... D01429 ... Fosfluconazole (JAN/INN) ... DG00375 ... Terbinafine ... D02375 ... Terbinafine... (USAN/INN) ... D02219 ... Terbinafine hydrochloride (JP17/USP) ... DG00441 ... Diclofenac ... D07816 ... Dicl

Dgroup: DG01636 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available analogue, fast-acting ... D04477 ... Insulin lispro (USP/INN); Insulin lispro (genetical recombination) (JAN) ... ... ... D04475 ... Insulin aspart (USAN/INN); Insulin aspart (genetical recombination) (JAN) ... D04540 ... Insulin glu...lisine (USAN/INN); Insulin glulisine (genetical recombination) (JAN) ... DG01797 ... Insulin analogue, long-acting ... D03250 ... Insulin glargine (USAN/INN); Insulin glargine (genetical recombinat...ion) (JP17); Insulin glargine (genetical recombination) injection (JP17); Insulin glargine (genetical recomb

Dgroup: DG01801 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available Insulin lispro (USP/INN); Insulin lispro (genetical recombination) (JAN) ... D04475 ... Insulin aspart (USAN/INN); Insulin aspart (genet...ical recombination) (JAN) ... D04540 ... Insulin glulisine (USAN/INN); Insulin glulisine (genetica...250 ... Insulin glargine (USAN/INN); Insulin glargine (genetical recombination) (JP17); Insulin glargine (genetica...l recombination) injection (JP17); Insulin glargine (genetical recombination [Insulin glargin biosimilar ...1] (JAN); Insulin glargine (genetical recombination) [Insulin glargin biosimilar

Dgroup: DG01754 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available ... Taranabant (USAN/INN) D09349 ... Ibipinabant (USAN/INN) D10314 ... Giminabant (USAN/INN) Other ... DG01706 ... Antiobesity... ... DG01705 ... Anoretic ATC code: A08AX Antiobesity agents CNR1 [HSA:1268] [KO:K04277] ...

Hospitality Industry, US and Territories, 2015, EPA Region 9

Data.gov (United States)

U.S. Environmental Protection Agency — This GIS dataset contains point features that represent hotels and motels, casinos, and casino hotels associated with three NAICS codes. Establishment-specific...

41 CFR 301-73.106 - What are the basic services that should be covered by a TMS?

Science.gov (United States)

2010-07-01

... availability, reservations and confirmation, compliance with Hotel/Motel Fire Safety Act, availability of Fed... confirmation and seat assignment, compliance with the Fly America Act, Governmentwide travel policies, contract...

75 FR 31895 - National Emission Standards for Hazardous Air Pollutants for Area Sources: Industrial, Commercial...

Science.gov (United States)

2010-06-04

.... Consistent with the legislative history, we can consider costs and economic impacts in determining GACT... establishments such as stores/malls, laundries, apartments, restaurants, and hotels/motels. The institutional...

Dgroup: DG01466 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available granules (JP17); Ifenprodil tartrate tablets (JP17) ... DG00320 ... Labetalol ... D08106 ... Labetalol (INN) ... D... ... D00561 ... Sertindole (USAN/INN) ... D01674 ... Naftopidil (JP17/INN); Naftopidil tablets (JP17); Naftopidil orally disintegrating tablet

Dgroup: DG01592 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available e (INN) ... D00633 ... Dopamine hydrochloride (JP17/USP) ... DG00801 ... Bupivacaine ... D07552 ... Bupivacaine (USAN/INN) ... D01450 ... Bupivacaine... hydrochloride (USP); Bupivacaine hydrochloride hydrate (JP17) ... D00059 ... Levodopa (JP17/USP/INN) ... Cardiovascular agent ...

Dgroup: DG00177 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available DG00177 Chemical ... DGroup Erythropoietin ... D03231 ... Epoetin alfa (USAN/INN); Epoetin... alfa (genetical recombination) (JP17) ... D03232 ... Epoetin beta (USAN/INN); Epoetin beta (genetical recombina...tion) (JP17) ... D04032 ... Epoetin delta (USAN) D09737 ... Epoetin kappa (INN); Epoetin kappa (genetical recombination) (Epoet...in alfa biosimilar 1) (JAN) ... D09998 ... Epoetin beta pegol (genetical ...recombination) (JAN) ... D10000 ... Epoetin epsilon (INN); Epoetin epsilon (genetical recombination) (JAN) D10846 ... Epoet

Design and analysis of InN - In0.25Ga0.75N single quantum well laser for short distance communication wavelength

Science.gov (United States)

Polash, Md. Mobarak Hossain; Alam, M. Shah; Biswas, Saumya

2018-03-01

A single quantum well semiconductor laser based on wurtzite-nitride is designed and analyzed for short distance communication wavelength (at around 1300 nm). The laser structure has 12 Å well layer of InN, 15 Å barrier layer of In0.25Ga0.75N, and 54 Å separate confinement heterostructure layer of GaN. To calculate the electronic characteristics of the structure, a self-consistent method is used where Hamiltonian with effective mass approximation is solved for conduction band while six-bands Hamiltonian matrix with k · p formalism including the polarization effect, valence-band mixing effect, and strain effect is solved for valence band. The interband optical transition elements, optical gain, differential gain, radiative current density, spontaneous emission rate, and threshold characteristics have been calculated. The wave function overlap integral is found to be 45.93% for TE-polarized structure. Also, the spontaneous emission rate is found to be 6.57 × 1027 s - 1 cm - 3 eV - 1 at 1288.21 nm with the carrier density of 5 × 1019 cm - 3. Furthermore, the radiative current density and the radiative recombination rate are found to be 121.92 A cm - 2 and 6.35 × 1027 s - 1 cm - 3, respectively, while the TE-polarized optical gain of the structure is 3872.1 cm - 1 at 1301.7 nm.

The Impact of a Case of Ebola Virus Disease on Emergency Department Visits in Metropolitan Dallas-Fort Worth, TX, July, 2013-July, 2015: An Interrupted Time Series Analysis.

Science.gov (United States)

Molinari, Noelle-Angelique M; LeBlanc, Tanya Telfair; Stephens, William

2018-03-20

The first Ebola virus disease (EVD) case in the United States (US) was confirmed September 30, 2014 in a man 45 years old. This event created considerable media attention and there was fear of an EVD outbreak in the US. This study examined whether emergency department (ED) visits changed in metropolitan Dallas-Fort Worth--, Texas (DFW) after this EVD case was confirmed. Using Texas Health Services Region 2/3 syndromic surveillance data and focusing on DFW, interrupted time series analyses were conducted using segmented regression models with autoregressive errors for overall ED visits and rates of several chief complaints, including fever with gastrointestinal distress (FGI). Date of fatal case confirmation was the "event." Results indicated the event was highly significant for ED visits overall (Pcapacity as well as for public health messaging in the wake of a public health emergency.

Dgroup: DG01986 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available DG01986 DGroup Estrogen ... DG00461 ... Ethinylestradiol ... D00554 ... Ethinyl estradiol (US...P); Ethinylestradiol (JP17/INN) ... D07928 ... Ethinylestradiol propanesulfonate DG00462 ... Estradiol ... D00105 ... Estr...adiol (JAN/USP/INN) ... D01413 ... Estradiol valerate (JAN/USP/INN) ... D01617 ... Estradiol dipropionate (JAN) ... D01953 ... Estr...adiol benzoate (JP17) ... D04061 ... Estradiol acetate (USAN) ... D04063 ... Estr...adiol cypionate (USP) ... D04064 ... Estradiol enanthate (USAN) ... D04065 ... Estradiol undecylate (USAN/INN) ... D07918 ... Estr

77 FR 4542 - Proposed Information Collection; Comment Request; Special Census Program

Science.gov (United States)

2012-01-30

..., campgrounds, hotels or motels. SC-1 (SUPP), Continuation Form for Enumerator Questionnaires--This interview... respondents other than their time. Respondents Obligation: Voluntary. Legal Authority: Title 13 U.S.C. Section...

A new perspective on soil erosion: exploring a thermodynamic approach in a small area of the River Inn catchment

Science.gov (United States)

Reid, Lucas; Scherer, Ulrike; Zehe, Erwin

2016-04-01

Soil erosion modeling has always struggled with compensating for the difference in time and spatial scale between model, data and the actual processes involved. This is especially the case with non-event based long-term models based on the Universal Soil Loss Equation (USLE), yet USLE based soil erosion models are among the most common and widely used for they have rather low data requirements and can be applied to large areas. But the majority of mass from soil erosion is eroded within short periods of times during heavy rain events, often within minutes or hours. Advancements of the USLE (eg. the Modified Universal Soil Loss Equation, MUSLE) allow for a daily time step, but still apply the same empirical methods derived from the USLE. And to improve the actual quantification of sediment input into rivers soil erosion models are often combined with a Sediment Delivery Ratio (SDR) to get results within the range of measurements. This is still a viable approach for many applications, yet it leaves much to be desired in terms of understanding and reproducing the processes behind soil erosion and sediment input into rivers. That's why, instead of refining and retuning the existing methods, we explore a more comprehensive, physically consistent description on soil erosion. The idea is to describe soil erosion as a dissipative process (Kleidon et al., 2013) and test it in a small sub-basin of the River Inn catchment area in the pre-Alpine foothills. We then compare the results to sediment load measurements from the sub-basin and discuss the advantages and issues with the application of such an approach.

77 FR 45922 - Standard Instrument Approach Procedures, and Takeoff Minimums and Obstacle Departure Procedures...

Science.gov (United States)

2012-08-02

... amendment provides the affected CFR sections and specifies the types of SIAPs and the effective dates of the... (GPS)-A, Orig Dallas, TX, Dallas Love Field, RNAV (GPS) Z RWY 13L, Amdt 1A Dallas, TX, Dallas Love...

77 FR 63603 - Endangered and Threatened Wildlife and Plants; Designation of Critical Habitat for the Cumberland...

Science.gov (United States)

2012-10-16

... selection criteria. We did not receive any comments from peer reviewers related to the yellowcheek darter or... restaurants, motels, grocery stores, gas stations, and feed stores, and corresponding losses in local and...

16 CFR 429.0 - Definitions.

Science.gov (United States)

2010-01-01

... temporary or short-term basis, such as hotel or motel rooms, convention centers, fairgrounds and restaurants... to the sale of securities or commodities by a broker-dealer registered with the Securities and...

44 CFR 61.9 - Establishment of chargeable rates.

Science.gov (United States)

2010-10-01

..., DEPARTMENT OF HOMELAND SECURITY INSURANCE AND HAZARD MITIGATION National Flood Insurance Program INSURANCE....06 1.23 2. All other including hotels and motels with normal occupancy of less than 6 months duration...

Guerra y pecados de un inglés en cádiz (1810-1812. Fragmentos de la autobiografía de Alexander Dallas

Directory of Open Access Journals (Sweden)

Fernando Durán López

2016-07-01

Full Text Available El escritor inglés Alexander Dallas participó en el ejército británico que operó en la Guerra de la Independencia y a su fin escribió varias obras literarias de tema español. Se ofrece aquí una traducción de parte de su autobiografía, publicada en 1871, que incluye los capítulos consagrados a su estancia en Cádiz y la Isla de León de 1810 a 1812. En esas páginas el autor refleja el ambiente de la vida social allí (las tertulias de la buena sociedad y evocaciones de las fiestas de Carnaval en 1812, detalles de la organización de la intendencia militar, así como episodios militares como la batalla de Chiclana, algunas operaciones de defensa ante el asedio francés, los efectos de los célebres bombardeos de larga distancia sobre el caso urbano, el júbilo popular cuando el sitio fue levantado y el estado en que quedaron tras la retirada francesa las poblaciones donde se habían asentado. Se relata también un viaje a Ceuta.

10 CFR 434.513 - Occupancy.

Science.gov (United States)

2010-01-01

... default assumptions. The same assumptions shall be made in computing Design Energy Consumption as were... area Ft 2 person Assembly 50 Office 275 Retail 300 Warehouse 15000 School 75 Hotel/Motel 250 Restaurant...

10 CFR 434.515 - Receptacles.

Science.gov (United States)

2010-01-01

... profiles are default assumptions. The same assumptions shall be made in calculating Design Energy... Hotel/Motel 0.25 Restaurant 0.1 Health 1.0 Multi-family High Rise Residential Included in Lights and...

Osoba niepełnosprawna - inne rodzicielstwo, inne braterstwo?

OpenAIRE

Stelter, Żaneta

2012-01-01

Urodzenie dziecka niepełnosprawnego, to wydarzenie, które ma wpływ na jakość życia rodziny. W artykule przedstawiono w jaki sposób niepełnosprawność dziecka określa sytuację życiową pozostałych członków rodziny. Opisano specyfikę realizacji ról rodzicielskich w rodzinie z dzieckiem niepełnosprawnym oraz przeanalizowano sytuacje psychospołeczną zdrowego rodzeństwa.

Viva il GIS Day!

Directory of Open Access Journals (Sweden)

Redazione Redazione

2007-03-01

Full Text Available Il GIS Day è sponsorizzato oltre che da ESRI, dalla National Geographic Society, dalla Association of American Geographers, dalla UCGIS (University Consortium for Geographic Information Science, dalla United States Geological Survey e dalla Library of Congress. Il tutto nasce nel corso della Geography Awareness Week, terza settimana di novembre che nel 1987 il Presidente degli Stati Uniti Ronald Reagan stabilì dovesse essere dedicata alla diffusione della cultura geografica.

La responsabilità sociale delle imprese multinazionali

OpenAIRE

Pauciulo, Domenico

2013-01-01

Il lavoro è volto a mettere in luce le problematiche connesse all’attività delle imprese multinazionali e alla sussistenza in capo alle stesse di una responsabilità sociale internazionale (RSI). Nell’attuale panorama economico e politico mondiale, caratterizzato dalla globalizzazione e dalla stretta interdipendenza dei mercati, dalla sempre più frequente internazionalizzazione dei processi produttivi e aziendali e dalla contestuale operatività delle società in più Paesi, dalla accresciuta...

TERRAIN, CITY OF DALLAS, DALLAS COUNTY, TEXAS

Data.gov (United States)

Federal Emergency Management Agency, Department of Homeland Security — Terrain data, as defined in FEMA Guidelines and Specifications, Appendix M: Data Capture Standards, describes the digital topographic data that was used to create...

BASEMAP, CITY OF DALLAS, DALLAS COUNTY, TEXAS

Data.gov (United States)

Federal Emergency Management Agency, Department of Homeland Security — FEMA Framework Basemap datasets comprise six of the seven FGDC themes of geospatial data that are used by most GIS applications (Note: the seventh framework theme,...

Study of High Quality Indium Nitride Films Grown on Si(100 Substrate by RF-MOMBE with GZO and AlN Buffer Layers

Directory of Open Access Journals (Sweden)

Wei-Chun Chen

2012-01-01

Full Text Available Wurtzite structure InN films were prepared on Si(100 substrates using radio-frequency metal-organic molecular beam epitaxy (RF-MOMBE system. Ga-doped ZnO (GZO and Amorphous AlN (a-AlN film were used as buffer layers for InN films growth. Structural, surface morphology and optical properties of InN films were investigated by X-ray diffraction (XRD, field emission scanning electron microscopy (FE-SEM, transmission electron microscopy (TEM, and photoluminescence (PL. XRD results indicated that all InN films exhibited preferred growth orientation along the c-axis with different intermediate buffers. TEM images exhibit the InN/GZO growth by two-dimensional mode and thickness about 900 nm. Also, the InN films can be obtained by growth rate about ~1.8 μm/h. Optical properties indicated that the band gap of InN/GZO is about 0.79 eV. These results indicate that the control of buffer layer is essential for engineering the growth of InN on silicon wafer.

InN-based layers grown by modified HVPE

International Nuclear Information System (INIS)

Syrkin, A.; Usikov, A.; Soukhoveev, V.; Kovalenkov, O.; Ivantsov, V.; Dmitriev, V.; Collins, C.; Readinger, E.; Shmidt, N.; Davydov, V.; Nikishin, S.; Kuryatkov, V.; Song, D.; Rosenbladt, D.; Holtz, Mark

2006-01-01

This paper contains results on InN and InGaN growth by Hydride Vapor Phase Epitaxy (HVPE) on various substrates including sapphire and GaN/sapphire, AlGaN/sapphire, and AlN/sapphire templates. The growth processes are carried out at atmospheric pressure in a hot wall reactor in the temperature range from 500 to 750 and ordm;C. Continuous InN layers are grown on GaN/sapphire template substrates. Textured InN layers are deposited on AlN/sapphire and AlGaN/sapphire templates. Arrays of nano-crystalline InN rods with various shapes are grown directly on sapphire substrates. X-ray diffraction rocking curves for the (002)InN reflection have the full width at half maximum (FWHM) as narrow as 270 arcsec for the nano-rods and 460 arcsec for the continuous layers. In x Ga 1-x N layers with InN content up to 10 mol.% are grown on GaN/sapphire templates. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Trip generation at special sites.

Science.gov (United States)

1984-01-01

Seven-day volume counts were made at fast-food restaurants with drive-thru service, convenience markets, condominiums, drive-in banks, high-rise apartments, planned unit developments, mobile home parks, day-care centers, churches, suburban motels, an...

An InN/InGaN Quantum Dot Electrochemical Biosensor for Clinical Diagnosis

Directory of Open Access Journals (Sweden)

Saima Zaman

2013-10-01

Full Text Available Low-dimensional InN/InGaN quantum dots (QDs are demonstrated for realizing highly sensitive and efficient potentiometric biosensors owing to their unique electronic properties. The InN QDs are biochemically functionalized. The fabricated biosensor exhibits high sensitivity of 97 mV/decade with fast output response within two seconds for the detection of cholesterol in the logarithmic concentration range of 1 × 10−6 M to 1 × 10−3 M. The selectivity and reusability of the biosensor are excellent and it shows negligible response to common interferents such as uric acid and ascorbic acid. We also compare the biosensing properties of the InN QDs with those of an InN thin film having the same surface properties, i.e., high density of surface donor states, but different morphology and electronic properties. The sensitivity of the InN QDs-based biosensor is twice that of the InN thin film-based biosensor, the EMF is three times larger, and the response time is five times shorter. A bare InGaN layer does not produce a stable response. Hence, the superior biosensing properties of the InN QDs are governed by their unique surface properties together with the zero-dimensional electronic properties. Altogether, the InN QDs-based biosensor reveals great potential for clinical diagnosis applications.

An InN/InGaN Quantum Dot Electrochemical Biosensor for Clinical Diagnosis

Science.gov (United States)

Alvi, Naveed ul Hassan; Gómez, Victor J.; Rodriguez, Paul E.D. Soto; Kumar, Praveen; Zaman, Saima; Willander, Magnus; Nötzel, Richard

2013-01-01

Low-dimensional InN/InGaN quantum dots (QDs) are demonstrated for realizing highly sensitive and efficient potentiometric biosensors owing to their unique electronic properties. The InN QDs are biochemically functionalized. The fabricated biosensor exhibits high sensitivity of 97 mV/decade with fast output response within two seconds for the detection of cholesterol in the logarithmic concentration range of 1 × 10−6 M to 1 × 10−3 M. The selectivity and reusability of the biosensor are excellent and it shows negligible response to common interferents such as uric acid and ascorbic acid. We also compare the biosensing properties of the InN QDs with those of an InN thin film having the same surface properties, i.e., high density of surface donor states, but different morphology and electronic properties. The sensitivity of the InN QDs-based biosensor is twice that of the InN thin film-based biosensor, the EMF is three times larger, and the response time is five times shorter. A bare InGaN layer does not produce a stable response. Hence, the superior biosensing properties of the InN QDs are governed by their unique surface properties together with the zero-dimensional electronic properties. Altogether, the InN QDs-based biosensor reveals great potential for clinical diagnosis applications. PMID:24132228

29 CFR 452.40 - Prior office holding.

Science.gov (United States)

2010-07-01

... DISCLOSURE ACT OF 1959 Candidacy for Office; Reasonable Qualifications § 452.40 Prior office holding. A.... 26 26 Wirtz v. Hotel, Motel and Club Employees Union, Local 6, 391 U.S. 492 at 504. The Court stated...

29 CFR 779.301 - Statutory provisions.

Science.gov (United States)

2010-07-01

..., cleaning, or repairing clothing or fabrics or an establishment engaged in the operation of a hospital... described in section 3(s), or (ii) Is in such an enterprise and is a hotel, motel or restaurant, or motion...

Immagini del mondo e forme della politica in Max Weber

OpenAIRE

Alagna, Mirko Domenico

2014-01-01

L’idea della redenzione era di per sé antichissima, se in essa si include la liberazione dal bisogno, dalla fame, dalla siccità, dalla malattia e – infine – dalla sofferenza e dalla morte. Tuttavia la redenzione acquistò un significato specifico soltanto dove fu espressione di un’''immagine del mondo'' razionalizzata sistematicamente e di una presa di posizione in base a questa. Infatti ciò che la redenzione, secondo il suo senso e la sua qualità psicologica, voleva e poteva significare, dipe...

Dgroup: DG01781 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available grastim (USAN/INN); Filgrastim (genetical recombination) (JP17); Filgrastim (genetical recombination) [Filgr...astim biosimilar 1] (JAN); Filgrastim (genetical recombination) [Filgrastim biosimilar 2] (JAN); Filgrastim (genetica...USAN/INN); Lenograstim (genetical recombination) (JP17) ... D06889 ... Pegfilgrastim (INN); Pegfilgrastim (genetica...l recombination) (JAN) ... D10242 ... Lipegfilgrastim (USAN) D03245 ... Nartograstim (genetical recombination) (...l recombination) [Filgrastim biosimilar3] (JAN) ... D03247 ... Lenograstim (

Dgroup: DG01797 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available ical recombination) (JP17); Insulin glargine (genetical recombination) injection (J...P17); Insulin glargine (genetical recombination [Insulin glargin biosimilar 1] (JAN); Insulin glargine (genetica...mir (USAN/INN); Insulin detemir (genetical recombination) (JAN) ... D09727 ... Insulin degludec (USAN/INN); Insulin degludec (genetica... DG01797 DGroup Insulin analogue, long-acting ... D03250 ... Insulin glargine (USAN/INN); Insulin glargine (genet

agyen gyasi

African Journals Online (AJOL)

User

This paper examines the staff turnover rates at the Kwame Nkrumah University of Science and .... Staff turnover rates and its implications ... 90 ... the total university budget should go to the libraries ...... Institute of the American Hotel and Motel.

77 FR 31180 - Standard Instrument Approach Procedures, and Takeoff Minimums and Obstacle Departure Procedures...

Science.gov (United States)

2012-05-25

... sections and specifies the types of SIAPs and the effective dates of the associated Takeoff Minimums and... Co Rgnl, ILS OR LOC RWY 29, Amdt 1A Dallas, TX, Dallas Love Field, RNAV (GPS) RWY 31L, Amdt 1A Dallas, TX, Dallas Love Field, RNAV (GPS) RWY 31R, Amdt 1A Effective 26 JULY 2012 Talkeetna, AK, Talkeetna...

Μία χελιδὼν ἔαρ οὐ ποιεἶ?* (a proposito della prima applicazione dell'art. 18 st. lav. modificato dalla l.92/12 al licenziamento disciplina­re illegittimo *Una rondine non fa primavera?

Directory of Open Access Journals (Sweden)

Calogero Massimo Cammalleri

2012-01-01

Full Text Available L'articolo, prendendo spunto dall'ordinanza del Tribunale di Bologna, analizza criticamente il tema, introdotto dalla novella all'art. 18 st. lav., della differenziazione delle sanzioni contro il licenziamento illegittimo in finzione della ti­pologia di illegittimità. Nell'aderire ai presupposti enunciati nell'ordinanza lo studio propone una propria lettura della no­vellazione avanzando la tesi della modificazione indiretta delle fattispecie giustificatrici.The study, starting from case law Trib. Bologna October 15, 2012 CP v. A., critically addresses interpretation problems posed by the new law of individual dismissal.

Dgroup: DG01753 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available ocyte colony stimulating factor (G-CSF) ... D03235 ... Filgrastim (USAN/INN); Filgrastim (genetical recombination) (JP17); Filgrastim (gene...tical recombination) [Filgrastim biosimilar 1] (JAN); Filgrastim (genetical recombi...nation) [Filgrastim biosimilar 2] (JAN); Filgrastim (genetical recombination) [Fi...lgrastim biosimilar3] (JAN) ... D03247 ... Lenograstim (USAN/INN); Lenograstim (genetical recombination) (JP17)... ... D06889 ... Pegfilgrastim (INN); Pegfilgrastim (genetical recombination) (JAN) ... D10242 ... Lipegfilgrastim

41 CFR 301-50.8 - Are there any limits on travel arrangements I may make?

Science.gov (United States)

2010-07-01

... Hotel and Motel Fire Safety Act of 1990 (the Act), as amended (see 5 U.S.C. 5707a). (2) When selecting a... that meet the fire safety requirements of the Act). (ii) Your agency has other contractual arrangements...

Atmospheric Boundary Layer Wind Data During the Period January 1, 1998 Through January 31, 1999 at the Dallas-Fort Worth Airport. Volume 1; Quality Assessment

Science.gov (United States)

Zak, J. Allen; Rodgers, William G., Jr.

2000-01-01

The quality of the Aircraft Vortex Spacing System (AVOSS) is critically dependent on representative wind profiles in the atmospheric boundary layer. These winds observed from a number of sensor systems around the Dallas-Fort Worth airport were combined into single vertical wind profiles by an algorithm developed and implemented by MIT Lincoln Laboratory. This process, called the AVOSS Winds Analysis System (AWAS), is used by AVOSS for wake corridor predictions. During times when AWAS solutions were available, the quality of the resultant wind profiles and variance was judged from a series of plots combining all sensor observations and AWAS profiles during the period 1200 to 0400 UTC daily. First, input data was evaluated for continuity and consistency from criteria established. Next, the degree of agreement among all wind sensor systems was noted and cases of disagreement identified. Finally, the resultant AWAS solution was compared to the quality-assessed input data. When profiles differed by a specified amount from valid sensor consensus winds, times and altitudes were flagged. Volume one documents the process and quality of input sensor data. Volume two documents the data processing/sorting process and provides the resultant flagged files.

Crystallographic analysis of human hemoglobin elucidates the structural basis of the potent and dual antisickling activity of pyridyl derivatives of vanillin

Energy Technology Data Exchange (ETDEWEB)

Abdulmalik, Osheiza [The Children’s Hospital of Philadelphia, Philadelphia, PA 19104 (United States); Ghatge, Mohini S.; Musayev, Faik N.; Parikh, Apurvasena [Virginia Commonwealth University, Richmond, VA 23298 (United States); Chen, Qiukan; Yang, Jisheng [The Children’s Hospital of Philadelphia, Philadelphia, PA 19104 (United States); Nnamani, Ijeoma [Duke University Medical Center, Durham, NC 27710 (United States); Danso-Danquah, Richmond [Virginia Commonwealth University, Richmond, VA 23298 (United States); Eseonu, Dorothy N. [Virginia Union University, Richmond, VA 23220 (United States); Asakura, Toshio [Duke University Medical Center, Durham, NC 27710 (United States); Abraham, Donald J.; Venitz, Jurgen; Safo, Martin K., E-mail: msafo@vcu.edu [Virginia Commonwealth University, Richmond, VA 23298 (United States); The Children’s Hospital of Philadelphia, Philadelphia, PA 19104 (United States)

2011-11-01

Pyridyl derivatives of vanillin increase the fraction of the more soluble oxygenated sickle hemoglobin and/or directly increase the solubility of deoxygenated sickle hemoglobin. Crystallographic analysis reveals the structural basis of the potent and dual antisickling activity of these derivatives. Vanillin has previously been studied clinically as an antisickling agent to treat sickle-cell disease. In vitro investigations with pyridyl derivatives of vanillin, including INN-312 and INN-298, showed as much as a 90-fold increase in antisickling activity compared with vanillin. The compounds preferentially bind to and modify sickle hemoglobin (Hb S) to increase the affinity of Hb for oxygen. INN-312 also led to a considerable increase in the solubility of deoxygenated Hb S under completely deoxygenated conditions. Crystallographic studies of normal human Hb with INN-312 and INN-298 showed that the compounds form Schiff-base adducts with the N-terminus of the α-subunits to constrain the liganded (or relaxed-state) Hb conformation relative to the unliganded (or tense-state) Hb conformation. Interestingly, while INN-298 binds and directs its meta-positioned pyridine-methoxy moiety (relative to the aldehyde moiety) further down the central water cavity of the protein, that of INN-312, which is ortho to the aldehyde, extends towards the surface of the protein. These studies suggest that these compounds may act to prevent sickling of SS cells by increasing the fraction of the soluble high-affinity Hb S and/or by stereospecific inhibition of deoxygenated Hb S polymerization.

Crystallographic analysis of human hemoglobin elucidates the structural basis of the potent and dual antisickling activity of pyridyl derivatives of vanillin

International Nuclear Information System (INIS)

Abdulmalik, Osheiza; Ghatge, Mohini S.; Musayev, Faik N.; Parikh, Apurvasena; Chen, Qiukan; Yang, Jisheng; Nnamani, Ijeoma; Danso-Danquah, Richmond; Eseonu, Dorothy N.; Asakura, Toshio; Abraham, Donald J.; Venitz, Jurgen; Safo, Martin K.

2011-01-01

Pyridyl derivatives of vanillin increase the fraction of the more soluble oxygenated sickle hemoglobin and/or directly increase the solubility of deoxygenated sickle hemoglobin. Crystallographic analysis reveals the structural basis of the potent and dual antisickling activity of these derivatives. Vanillin has previously been studied clinically as an antisickling agent to treat sickle-cell disease. In vitro investigations with pyridyl derivatives of vanillin, including INN-312 and INN-298, showed as much as a 90-fold increase in antisickling activity compared with vanillin. The compounds preferentially bind to and modify sickle hemoglobin (Hb S) to increase the affinity of Hb for oxygen. INN-312 also led to a considerable increase in the solubility of deoxygenated Hb S under completely deoxygenated conditions. Crystallographic studies of normal human Hb with INN-312 and INN-298 showed that the compounds form Schiff-base adducts with the N-terminus of the α-subunits to constrain the liganded (or relaxed-state) Hb conformation relative to the unliganded (or tense-state) Hb conformation. Interestingly, while INN-298 binds and directs its meta-positioned pyridine-methoxy moiety (relative to the aldehyde moiety) further down the central water cavity of the protein, that of INN-312, which is ortho to the aldehyde, extends towards the surface of the protein. These studies suggest that these compounds may act to prevent sickling of SS cells by increasing the fraction of the soluble high-affinity Hb S and/or by stereospecific inhibition of deoxygenated Hb S polymerization

Attitudes of physicians and pharmacists towards International Non-proprietary Name prescribing in Belgium.

Science.gov (United States)

Van Bever, Elien; Elseviers, Monique; Plovie, Marijke; Vandeputte, Lieselot; Van Bortel, Luc; Vander Stichele, Robert

2015-03-01

International Non-proprietary Name (INN) prescribing is the use of the name of the active ingredient(s) instead of the brand name for prescribing. In Belgium, INN prescribing began in 2005 and a major policy change occurred in 2012. The aim was to explore the opinions of Dutch-speaking general practitioners (GPs) and pharmacists. An electronic questionnaire with 39 five-point Likert scale statements and one open question was administered in 2013. Multivariate analysis was performed with multiple linear regression on a sum score for benefit statements and for drawback statements. Answers to the open question were qualitatively analysed. We received 745 valid responses with a representable sample for both subgroups. Participants perceived the motives to introduce INN prescribing as purely economic (to reduce pharmaceutical expenditures for the government and the patient). Participants accepted the concept of INN prescribing, but 88% stressed the importance of guaranteed treatment continuity, especially in older, chronic patients, to prevent patient confusion, medication non-adherence and erroneous drug use. In conclusion, the current way in which INN prescribing is applied in Belgium leads to many concerns among primary health professionals about patient confusion and medication adherence. Slightly adapting the current concept of INN prescribing to these concerns can turn INN prescribing into one of the major policies in Belgium to reduce pharmaceutical expenditures and to stimulate rational drug prescribing. © 2014 Nordic Association for the Publication of BCPT (former Nordic Pharmacological Society).

77 FR 45925 - Standard Instrument Approach Procedures, and Takeoff Minimums and Obstacle Departure Procedures...

Science.gov (United States)

2012-08-02

... types of SIAP and the corresponding effective dates. This amendment also identifies the airport and its... RWY 35, Amdt 18A. Airport Lee Bird Field. 23-Aug-12 TX Dallas Dallas Love Field... 2/0613 7/11/12 ILS RWY 13R, Amdt 4D. 23-Aug-12 TX Dallas Dallas Love Field... 2/0617 7/11/12 ILS RWY 13L, Amdt 31B. 23...

Editoriale

Directory of Open Access Journals (Sweden)

V. Busacchi

2017-12-01

Full Text Available Il Novecento è stato profondamente influenzato dagli sviluppi teoretico-pratici e riflessivi dell’ermeneutica filosofica. Ha introdotto un tale ventaglio di problematizzazioni, contenuti e prospettive, e su una vasta scala di riferimento e investimento (inter-disciplinare, da parer inserirsi nell’orbita di una vera e propria koinè filosofica, non decennale (Vattimo ma secolare. Una produttività, significatività e forza euristica del ricercare e del pensare che ha investito vari ambiti scientifici, particolarmente (ma non solo delle scienze umane e sociali: dalla psicologia alla sociologia, dalla psicoanalisi alla letteratura, dalla semiotica alla esegesi biblica, dall’antropologia culturale alla linguistica, dalla retorica alla narratologia, dalla storia al diritto, dalla teoria politica alla religione, ecc. Si tratta di un itinerario tanto ampio e fertile quanto non lineare e problematico, e persino conflittuale.

Development, survival and reproduction of Podisus nigrispinus (Dallas, 1851 (Heteroptera: Pentatomidae with salt and amino acids solutions supplementary diet

Directory of Open Access Journals (Sweden)

Simone Patrícia Carneiro Freitas

2006-05-01

Full Text Available This study presents the effect of a supplementary diet with amino acids and sodium chloride solutions in addition to prey on the development, survival and reproduction of the predator Podisus nigrispinus (Heteroptera, Pentatomidae. Both solutions showed deleterious effects on nymph survival, adult weight, female longevity, number of egg masses, eggs per female, eggs per egg mass and nymphs per female besides egg viability of P. nigrispinus when compared with diet with water and prey. When compared with plant supplements in the diet the use of amino acids and salt solutions for mass rearing of P. nigrispinus was inferior.O presente estudo mostra o efeito da suplementação alimentar com soluções de aminoácidos e salina (NaCl no desenvolvimento, sobrevivência e reprodução de Podisus nigrispinus (Dallas (Heteroptera: Pentatomidae. Ambas soluções causaram efeito deletério na sobrevivência ninfal, peso dos adultos, longevidade das fêmeas e nos números de posturas, de ovos/fêmea, de ovos/postura e de ninfas, bem como na viabilidade dos ovos de P. nigrispinus quando comparado com estes insetos que além de presa receberam água. Estes resultados são discutidos em comparação com o efeito positivo que a suplementação alimentar com plantas tem sido relatada para esses predadores e sugerem que o uso de plantas é melhor que a substituição por solução de aminoácidos em sistemas de criação em laboratório desses predadores.

MEG source localization using invariance of noise space.

Directory of Open Access Journals (Sweden)

Junpeng Zhang

Full Text Available We propose INvariance of Noise (INN space as a novel method for source localization of magnetoencephalography (MEG data. The method is based on the fact that modulations of source strengths across time change the energy in signal subspace but leave the noise subspace invariant. We compare INN with classical MUSIC, RAP-MUSIC, and beamformer approaches using simulated data while varying signal-to-noise ratios as well as distance and temporal correlation between two sources. We also demonstrate the utility of INN with actual auditory evoked MEG responses in eight subjects. In all cases, INN performed well, especially when the sources were closely spaced, highly correlated, or one source was considerably stronger than the other.

Dgroup: DG01358 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available DG01358 Chemical ... DGroup Trastuzumab ... D03257 ... Trastuzumab (INN); Trastuzumab (genetica...l recombination) (JAN) ... D09980 ... Trastuzumab emtansine (USAN/INN); Trastuzumab emtansine (genetical re

Dgroup: DG01456 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available ... D07461 ... Apraclonidine (INN) ... D01008 ... Apraclonidine hydrochloride (JAN/USP) ... DG01318 ... Detomidine ... D07795 ... Detomidine... (INN) ... D03702 ... Detomidine hydrochloride (USAN) ... DG0132

Heaven and Hell at the Paradise Motel

Directory of Open Access Journals (Sweden)

Tessa Chudy

2013-10-01

Full Text Available This piece is taken from the novel “Heaven and Hell at the Paradise Motel” and the exegesis that together forms my PhD thesis. The three main strands of this thesis are Gothic, Noir and sense of place. The novel, ‘‘Heaven and Hell at the Paradise Motel”, is preoccupied with the natural environment, its subtle seasonal changes and the way the environment impacts on its human inhabitants and how they in turn affect it. The novel is, in a very Gothic sense, haunted by dreams, apparitions and narratives – specifically mini-narratives that reflect the nature of fairy tales, horror stories and urban myths. It contains elements of melodrama, horror, romance. The story follows a deeply dysfunctional family through a seasonal cycle: beginning in Spring and ending once again in Spring. A key focus for both the creative and the theoretical work was the everyday application of the Gothic and Noir – for example a house doesn’t have to be a castle to be haunted; people don’t have to be monsters to be monstrous. The dark, the strange, the sinister and the perverse lurk in the shadows of everyday reality, but also how these elements intertwined within the landscape.

Dgroup: DG01613 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available DG01613 DGroup Xantine-type antiparkinsonian agent -fylline ... D02964 ... Apaxifylline ...(USAN/INN) D04641 ... Istradefylline (JAN/USAN/INN) ... Neuropsychiatric agent ... DG01967 ... Antiparkinson agent ...

Dgroup: DG01789 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available ) DG01442 ... Tedizolid ... D09685 ... Tedizolid (USAN/INN) ... D09686 ... Tedizolid phosphate (JAN/USAN) ... D10167 ... Sutezolid (USAN/INN) Antibacterial ... Antibiotics 50S ribosomal subunit ...

Dgroup: DG01644 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available xetine ... D07473 ... Atomoxetine (USP/INN) ... D02574 ... Atomoxetine...0967 ... Dexamfetamine ... D03740 ... Dextroamphetamine (USAN); Dexamfetamine (INN) ... D02078 ... Dextroamphetamine sulfate (USP) ... DG00970 ... Atomo

Interjöör kuningliku tõlla ja isemängiva kitarriga / Ell-Maaja Randküla

Index Scriptorium Estoniae

Randküla, Ell-Maaja, 1939-2016

2006-01-01

Tallinnas Rävala pst. 7 asuva kaupluse "Motel Paradise" sisekujundus. Autorid: Hannes Praks ja Margus Tammik, OÜ Kohvi. H. Praksist ja M. Tammikust, nende tähtsamad tööd. Ill.: kaks korruste plaani, 20 värv. vaadet, fotod sisearhitektidest

Dgroup: DG01584 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available DG01584 DGroup Estrogen receptor agonist -estr- ... DG00461 ... Ethinylestradiol ... D00554... ... Ethinyl estradiol (USP); Ethinylestradiol (JP17/INN) ... D07928 ... Ethinylestradiol propanesulfonate DG00462 ... Estradiol ... D00105 ... Estr...adiol (JAN/USP/INN) ... D01413 ... Estradiol valerate (JAN/USP/INN) ... D01617 ... Estrad...iol dipropionate (JAN) ... D01953 ... Estradiol benzoate (JP17) ... D04061 ... Estradiol a...cetate (USAN) ... D04063 ... Estradiol cypionate (USP) ... D04064 ... Estradiol enanthate (USAN) ... D04065 ... Estradio

Changes to International Nonproprietary Names for antibody therapeutics 2017 and beyond: of mice, men and more.

Science.gov (United States)

Parren, Paul W H I; Carter, Paul J; Plückthun, Andreas

Active pharmaceutical substances require an International Nonproprietary Name (INN) assigned by the World Health Organization (WHO) to obtain market authorization as a medicinal product. INNs are selected to represent a unique, generic name for a drug enabling unambiguous identification by stakeholders worldwide. INNs may be requested after initiating clinical development of an investigational drug. Pharmaceutical classes are indicated by a common stem or suffix. Currently, INNs for monoclonal antibody-based drugs are recognized by the suffix, -mab, preceded by a source infix such as -xi- (chimeric), -zu- (humanized) or -u- (human) designating the species from which the antibody was derived. However, many technological advances have made it increasingly difficult to accurately capture an antibody's source in its name. In 2014, the WHO and the United States Adopted Names (USAN) Council approached this challenge by implementing changes to antibody source infix definitions. Unfortunately, gaps and ambiguities in the definitions and procedures resulted in inconsistent source category assignments and widespread confusion. The Antibody Society, extensively supported by academic and industry scientists, voiced concerns leading to constructive dialog during scheduled consultations with WHO and USAN Council representatives. In June 2017, the WHO announced that use of the source infix will be discontinued for new antibody INNs effective immediately. We fully support this change as it better aligns antibody INNs with current and foreseeable future innovations in antibody therapeutics. Here we review the changes implemented. Additionally, we analyzed antibody INNs recently assigned under the previous 2014 definitions and provide recommendations for further alignment.

77 FR 9169 - Standard Instrument Approach Procedures, and Takeoff Minimums and Obstacle Departure Procedures...

Science.gov (United States)

2012-02-16

... sections and specifies the types of SIAPs and the effective dates of the associated Takeoff Minimums and... Dallas, TX, Collin County Rgnl at McKinney, ILS OR LOC RWY 17, Amdt 3A Dallas, TX, Dallas Love Field, ILS...

Dgroup: DG01704 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available D05454 ... Phenmetrazine hydrochloride (USP) D07114 ... Etilamfetamine (INN) D07115 ... Clobenzorex (INN) Other ... DG01706 ... Antiobesity ... DG01705 ... Anoretic ATC code: A08AA Anoretics ...

Dgroup: DG01970 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available ylphenidate (USAN/INN) ... D01296 ... Methylphenidate hydrochloride (JAN/USP) ... DG00970 ... Atomoxetine... ... D07473 ... Atomoxetine (USP/INN) ... D02574 ... Atomoxetine hydrochloride (JAN/USP) ... DG00972 ... De

Dgroup: DG01967 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available de (INN) ... D00502 ... Pergolide mesylate (USP); Pergolide mesilate (JAN) ... D07836 ... Dihydroergocryptine mesilate DG00862 ... Ropini...role ... D08489 ... Ropinirole (USAN/INN) ... D00784 ... Ropinirole hydrochlo

Development of Advanced Ill-Nitride Materials

Science.gov (United States)

2008-09-24

tant to note that growth conditions have little effect on In- vacancy concentration as determined by positron annihilation spectroscopy .27 The In... applications in de- vices. These limitations are in part caused by an electron accumulation layer at the InN surface due to surface Fermi level pinning in the...conduction band,1 restricting the fabrica- tion of p-type InN layers.2 To facilitate pure p-type InN and drive research toward device applications

Dgroup: DG01639 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available amine ... D07984 ... Fluvoxamine (INN) ... D00824 ... Fluvoxamine maleate (JP17/USAN) ... DG00947 ... Escitalopram ... D07913 ... Escitalopram... (INN) ... D02567 ... Escitalopram oxalate (JAN/USAN) ... DG00951 ... Mianserin

Dgroup: DG01975 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available 91 ... Enprostil (JAN/USAN/INN) D01451 ... Scopolamine butylbromide (JP17) ... DG02008 ... Gastric mucosal protectant ... DG00025 ... Sucralfate... ... C07314 ... Sucralfate ... D00446 ... Sucralfate (USP/INN); Sucralfate

Dgroup: DG01703 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available AN) DG01610 ... Xanthine-type cardiotonics ... D07151 ... Cafedrine (BAN) ... D07155 ... Theodrenaline (INN) ... D07933 ... Etofy... ... Ciclafrine hydrochloride (USAN) ... D07150 ... Gepefrine (INN) ... D07151 ... Cafedrine (BA

Hospitality, Recreation, and Personal Service Occupations: Grade 8. Cluster V.

Science.gov (United States)

Calhoun, Olivia H.

A curriculum guide for grade 8, the document is devoted to the occupational cluster "Hospitality, Recreation, and Personal Service Occupations." It is divided into four units: recreational resources for education, employment, and professional opportunities; barbering and cosmetology; mortuary science; hotel-motel management. Each unit is…

48 CFR 22.1003-4 - Administrative limitations, variations, tolerances, and exemptions.

Science.gov (United States)

2010-10-01

... application of micro-electronic circuitry or other technology of at least similar sophistication is an..., purchase cards, smart cards, and similar card services). (iii) Hotel/motel services for conferences... appraisers to assist Federal employees or military personnel in buying and selling homes (which shall not...

Structural and optical characteristics of InN/GaN multiple quantum wells grown by metalorganic chemical vapor deposition

International Nuclear Information System (INIS)

Kim, Je Won; Lee, Kyu Han; Hong, Sangsu

2007-01-01

The structural and electrical properties of InN/GaN multiple quantum wells, which were grown by metalorganic chemical vapor deposition, were characterized by transmission electron microscopy (TEM) and electroluminescence measurements. From the TEM micrographs, it was shown that the well layer was grown like a quantum dot. The well layer is expected to be the nano-size structures in the InN multiple quantum well layers. The multi-photon confocal laser scanning microscopy was used to investigate the optical properties of the light emitting diode (LED) structures with InN active layers. It was found that the two-photon excitation was possible in InN system. The pit density was measured by using the far-field optical technique. In the varied current conditions, the blue LED with the InN multiple quantum well structures did not have the wavelength shift. With this result, we can expect that the white LEDs with the InN multiple quantum well structures do not show the color temperature changes with the variations of applied currents

Dgroup: DG01675 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available aine ... D01152 ... Oxethazaine (JP17/USAN); Oxetacaine (INN) ... D08311 ... Oxetacaine hydrochloride ... DG00801 ... Bupivacaine ... D07552 ... Bupiva...caine (USAN/INN) ... D01450 ... Bupivacaine hydrochloride (USP); Bupivacaine hydrochl

HOTEL INFORMATION

Institute of Scientific and Technical Information of China (English)

无

2011-01-01

Holiday Inn Central Plaza Beijing Tyrone Tang is the newly appointed general manager of Holiday Inn Central Plaza, Beijing.Tang joined IHGin2002.He was transferred from the position of operations manager.

Dgroup: DG01720 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available P17); Cyclophosphamide tablets (JP17) ... DG01514 ... Palifosfamide ... D09364 ... Palifosfamide (USAN/INN) ... D10373 ... P...yclophosphamide ... D07760 ... Cyclophosphamide (INN) ... D00287 ... Cyclophosphamide (USP); Cyclophosphamide hydrate (J

Dgroup: DG01673 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available P17/USAN); Oxetacaine (INN) ... D08311 ... Oxetacaine hydrochloride DG00801 ... Bupivacaine ... D07552 ... Bupivacaine (USAN/INN) ... D01450 ... Bup...ivacaine hydrochloride (USP); Bupivacaine hydrochloride hydrate (JP17) ... DG00802 ...

Dgroup: DG01655 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available 130 ... Apraclonidine ... D07461 ... Apraclonidine (INN) ... D01008 ... Apraclonidine hydrochloride (JAN/USP) ... DG01318 ... Detomidine ... D07795 ... Detomi...dine (INN) ... D03702 ... Detomidine hydrochloride (USAN) DG01320 ... Medetomidine ... D08165 ...

Dgroup: DG00462 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available DG00462 Chemical ... DGroup Estradiol ... D00105 ... Estradiol (JAN/USP/INN) ... D01413 ... Estr...adiol valerate (JAN/USP/INN) ... D01617 ... Estradiol dipropionate (JAN) ... D01953 ... Estradiol benzoate (JP17) D04061 ... Estr...adiol acetate (USAN) ... D04063 ... Estradiol cypionate (USP) ... D04064 ... Estradiol enanthate (USAN) D04065 ... Estr...adiol undecylate (USAN/INN) D07918 ... Estradiol hemihydrate D07919 ... Estr...adiol 17 beta-hemisuccinate Other ... DG01584 ... Estrogen receptor agonist ... DG01986 ... Estrogen Cyp substrate ... DG0

Dgroup: DG01600 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available DG01600 DGroup Bisphosphonate -dronic acid, -dronate ... DG00780 ... Etidronic acid ... D02373 ... Etidron...ic acid (USAN/INN) ... D00314 ... Etidronate disodium (JP17/USP) ... DG00781 ... Clodronic acid ... D03545 ... Clodron...ic acid (USAN/INN) ... D03544 ... Clodronate disodium (USAN); Sodium clodronate hydrate (JAN) ... D07720 ... Clodron...ic acid disodium salt DG00782 ... Pamidronic acid ... D07281 ... Pamidronic acid (INN) ... D00941 ... Pamidron...ate disodium (USAN); Pamidronate disodium hydrate (JAN) ... DG00783 ... Alendronic acid ... D07119 ... Alendron

Dgroup: DG01495 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available n (USAN/INN) ... D00626 ... Candesartan cilexetil (JP17/USAN) ... D00627 ... Telmisartan (JP17/USAN/INN); Telmisartan tablet...N); Olmesartan medoxomil tablets (JP17) ... DG00351 ... Azilsartan ... D08864 ... Azilsarta

Careers Canada, Volume 9: Careers in the Hospitality Industry.

Science.gov (United States)

Department of Manpower and Immigration, Ottawa (Ontario).

This booklet, designed for prospective job seekers, describes occupational opportunities within the food service, food preparation and hotel/motel industries in Canada. The preparatory training and job descriptions of cooks, chefs, tourist guides, waiters, hotel and restaurant managers, bartenders and front desk clerks are highlighted.…

Information System Training, Usage, and Satisfaction: An Exploratory Study of the Hospitality Industry.

Science.gov (United States)

Gardner, William L., III; Gundersen, David E.

1995-01-01

Discusses use of a mail survey to study the extent to which the hospitality industry employs various information technologies, including computer-mediated communication systems. Finds that hotel/motel size and chain affiliation are related to information system complexity, and that chain-affiliated hotels provide less computer and…

76 FR 16538 - Solid Waste Rail Transfer Facilities

Science.gov (United States)

2011-03-24

... leaving in place the rules issued in 2009, which were drafted without any input from industry and other... discarded by residential dwellings, hotels, motels, and other similar permanent or temporary housing... notice concerning the acquisition shall include a statement that a solid waste rail transfer facility...

78 FR 3855 - Rule Concerning Cooling-Off Period for Sales Made at Homes or at Certain Other Locations

Science.gov (United States)

2013-01-17

..., such as hotel or motel rooms, convention centers, fairgrounds and restaurants, or sales at the buyer's... product; (4) high prices for low quality merchandise; and (5) the nuisance created by the uninvited... any traded-in property, cancelling and returning any security interests created in the transaction...

77 FR 2306 - Agency Information Collection Activities: Submission for OMB Review; Comment Request, Federal...

Science.gov (United States)

2012-01-17

... Request, Federal Hotel and Motel Fire Safety Declaration Form AGENCY: Federal Emergency Management Agency... information collection abstracted below to the Office of Management and Budget for review and clearance in... Affairs, Office of Management and Budget. Comments should be addressed to the Desk Officer for the...

May I sleep in your bed? Getting permission to book

NARCIS (Netherlands)

Karlsson, L.; Kemperman, A.D.A.M.; Dolnicar, S.

2017-01-01

Demand for tourist accommodation offered on peer-to-peer networks is skyrocketing. In such networks tourists can only book if the accommodation provider (host) gives their permission. Needing permission to book accommodation is radically new in tourism. No hotel, motel or B&B assesses a tourist

Dgroup: DG01683 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available /INN) D05739 ... Rivoglitazone (USAN/INN) Antidiabetic agent ... DG01685 ... Insulin sensitizer ... DG01795 ... PPAR gamma... agonist Other ... DG01733 ... PPAR agonist Unclassified ... DG02044 ... Hypoglycemics ATC code: A10BG Antidiabetic

Dgroup: DG01794 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available rtugliflozin (USAN/INN) D10669 ... Sotagliflozin (USAN/INN) Antidiabetic agent Uncla...ssified ... DG02044 ... Hypoglycemics ATC code: A10BK Antidiabetics SLC5A2 (SGLT2) [HSA:6524] [KO:K14382] ...

Dgroup: DG01567 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available am (JP17/USP/INN) ... D00280 ... Clonazepam (JP17/USP/INN); Clonazepam fine granules (JP17); Clonazepam tablets ...N); Etizolam fine granules (JP17); Etizolam tablets (JP17) ... D01593 ... Nimetazepam

78 FR 29374 - National Institute of Environmental Health Sciences Amended; Notice of Meeting

Science.gov (United States)

2013-05-20

....m. to June 6, 2013, 05:00 p.m., Hilton Garden Inn Durham Southpoint Hotel, 7007 Fayetteville Road... meeting location from the Hilton Garden Inn Durham Southpoint Hotel to the DoubleTree by Hilton Hotel. The...

Dgroup: DG01573 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available ate semisodium (INN) ... D00710 ... Valproate sodium (USAN); Sodium valproate (JP17) ... D08667 ... Calcium valproate DG01006 ... Flunar...izine ... D07971 ... Flunarizine (INN) ... D01303 ... Flunarizine hydrochloride (JAN/USAN) DG01382 ... E

Dgroup: DG01430 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available DG01430 Chemical ... DGroup Paclitaxel ... D00491 ... Paclitaxel (JAN/USP/INN) ... D05333 ... Paclitax...el poliglumex (USAN/INN) ... Antineoplastics, taxane TUBB [HSA:10381 10382 10383 203068 347688 347733 7280 81027 84617] [KO:K07375] ...

Passenger Transportation and Travel Curriculum Guide. Final Report.

Science.gov (United States)

Lininger, Carol

This curriculum guide provides materials for a course in passenger transportation and travel. The four-credit, competency-based program provides students with skills necessary to obtain employment in the aviation industry, travel agencies, hotel/motel management, and car rental agencies. An overview of vocational-technical education at the school…

Profieldiepten van personenautobanden in Nederland : bevindingen bij een aantal metingen in November 1976.

NARCIS (Netherlands)

Schlösser, L.H.M. Blokpoel, A. & Harris, S.

1979-01-01

The Institute for Road Safety Research SWOV carried out an inspection of the tyres of approximately 6000 cars in the Netherlands during November 1976 in order to measure their tread-depths. The sample was taken at the parking lots of roadside restaurants, motels, and modern shopping centres and

41 CFR 301-11.17 - If my agency authorizes per diem reimbursement, will it reduce my M&IE allowance for a meal(s...

Science.gov (United States)

2010-07-01

... for a complimentary meal(s) provided by a hotel/motel? 301-11.17 Section 301-11.17 Public Contracts and Property Management Federal Travel Regulation System TEMPORARY DUTY (TDY) TRAVEL ALLOWANCES... 41 Public Contracts and Property Management 4 2010-07-01 2010-07-01 false If my agency authorizes...

Report of the Technical Committee for Hospitality, Tourism, Recreation.

Science.gov (United States)

Oregon State Dept. of Education, Salem. Div. of Vocational Education.

This color-coded committee report identifies the skills and knowledge required by employees in the hospitality/tourism/recreation occupational area. The reports of four subcommittees focused on food/beverage, hotel/motel, recreation/leisure, and travel/tourism skills are also included. Introductory materials include a general statement of the…

26 CFR 1.123-1 - Exclusion of insurance proceeds for reimbursement of certain living expenses.

Science.gov (United States)

2010-04-01

... housing, meals obtained at restaurants which customarily would have been prepared in the residence... extent of the decrease for purposes of computing the limitation. (4) Examples. The application of this... restaurant. A and his spouse incur expenses of $200 for lodging at a motel, $180 for meals which customarily...

76 FR 50979 - Fisheries of the Caribbean, Gulf of Mexico, and South Atlantic; Reef Fish Fishery of the Gulf of...

Science.gov (United States)

2011-08-17

... tackle shops, and hotels and motels, in addition to environmental groups, student clubs, and other groups...- information displays a currently valid Office of Management and Budget (OMB) control number. This proposed... transaction; weight and actual ex-vessel price of red snapper landed and sold; and information necessary to...

41 CFR 301-11.12 - How does the type of lodging I select affect my reimbursement?

Science.gov (United States)

2010-07-01

... lodgings. (Hotel/motel, boarding house, etc.) You will be reimbursed the single occupancy rate. (b) Government quarters. You will be reimbursed, as a lodging expense, the fee or service charge you pay for use... college dormitories or similar facilities or rooms not offered commercially but made available to the...

Your Travel Dollar. Money Management.

Science.gov (United States)

Baran, Nancy H., Ed.

This illustrated guide was designed to familiarize consumers with planning a vacation trip, whether domestic or abroad. The guide covers setting up a budget; package tours; cruises and charter flights; travel agencies and clubs; and arranging stays in hotels/motels, rental condominiums, bed-and-breakfasts, hostels, campsites, and private…

NOTES AND GLEANINGS / NOTE E CURIOSITÀ

African Journals Online (AJOL)

User

pensiero che oltrepassi le colonne d'Ercole stabilite dalla metafisica e cioè i concetti di soggetto e oggetto psichico e fisico. Questo destino della filosofia è condiviso dalla psicologia fenomenologica che con. Husserl si è distinta dalla psicologia naturalistica. La psicanalisi ha una sua episteme come le scienze umane, ma a.

Dgroup: DG01630 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available DG01630 DGroup beta-Estrogen receptor agonist -berel ... D06631 ... Prinaberel (USAN/INN...) D09899 ... Erteberel (USAN/INN) Other ... DG01584 ... Estrogen receptor agonist ... NR3A2 (ESR2) [HSA:2100] [KO:K08551] ...

Hemodynamic and Mechanical Properties of the Proximal Aorta in Young and Middle-Aged Adults With Isolated Systolic Hypertension: The Dallas Heart Study.

Science.gov (United States)

Yano, Yuichiro; Neeland, Ian J; Ayers, Colby; Peshock, Ronald; Berry, Jarett D; Lloyd-Jones, Donald M; Greenland, Philip; Mitchell, Gary F; Vongpatanasin, Wanpen

2017-07-01

The aim of this study was to assess characteristic impedance (Z c ) of the proximal aorta in young and middle-aged individuals with isolated systolic hypertension (ISH). Z c is an index of aortic stiffness relative to aortic size. In the Dallas Heart Study, 2001 untreated participants 18 to 64 years of age (mean age: 42.3 years; 44% black race) were divided into the following groups based on office blood pressure (BP) measurements: (1) optimal BP (systolic BP [SBP] hypertension (SBP hypertension (SBP ≥140 mm Hg and DBP ≥90 mm Hg; n=178). Z c , aortic arch pulse wave velocity, and minimum ascending aortic size were quantified using cardiovascular magnetic resonance. In multivariable-adjusted linear models, Z c was highest in the ISH group compared with the optimal BP, isolated diastolic hypertension, or systolic-diastolic hypertension groups (103.2±4.0 versus 68.3±2.1, 75.4±6.0, and 88.9±4.8 dyne*seconds/cm 5 , respectively; all P hypertension, or systolic-diastolic hypertension groups (6.3±0.3 versus 4.3±0.1, 4.4±0.4 and 5.5±0.3 m/s, respectively; all P 0.2). Results were similar in a subgroup of 1551 participants 18 to 49 years of age. In a multiracial population-based sample, we found evidence of a mismatch between proximal aortic stiffness and diameter in young and middle-aged adults with ISH. © 2017 American Heart Association, Inc.

Concept of restaurant reservations information system

OpenAIRE

Štok, Janez

2016-01-01

In our home place we have only one inn. It's occupied mostly from Italian guests. Times are changing and buying power of Italians has declining since world financial collapse. Some fellow villagers has got an idea to rent some rooms for tourists. Inn is popular choice among guests, because is in walking distance of rooms. There is a problem with knowledge of languages, with that in mind owner of inn decided to contact me and explain the problem. There is need to create some sort of Android ap...

Dgroup: DG01152 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available DG01152 Chemical ... DGroup Edetate ... D00052 ... Edetic acid (NF/INN) D00571 ... Edetate calcium disodium... anhydrous (USP) D01802 ... Edetate disodium (USP); Disodium edetate hydrate (JP17) D03943 ... Edetate calcium disodium... (USP); Calcium sodium edetate hydrate (JP17); Sodium calcium edetate (INN) ... D03944 ... Ed...etate dipotassium (USAN) D03945 ... Disodium edetate D03946 ... Edetate sodium (USAN) D03947 ... Edetate trisodium... (USAN) D07934 ... Edetate calcium disodium D07935 ... Dicobalt edetate (INN) Other ... DG01692 ... Chelator ATC code: V03AB03 Antidotes, Chelating agents ...

Novel transformation-based response prediction of shear building ...

Indian Academy of Sciences (India)

c Indian Academy of Sciences ... structural response of multi-storey shear buildings subject to earthquake motion. The INN is first ... China has been presented by Xie et al. (2011). ... research works have been done using INN in other fields.

The Dallas-Fort Worth (DFW) Urban Radar Network: Enhancing Resilience in the Presence of Floods, Tornadoes, Hail and High Winds

Science.gov (United States)

Chandra*, Chandrasekar V.; the full DFW Team

2015-04-01

Currently, the National Weather Service (NWS) Next Generation Weather Radar (NEXRAD) provides observations updated every five-six minutes across the United States. However, at the maximum NEXRAD operating range of 230 km, the 0.5 degree radar beam (lowest tilt) height is about 5.4 km above ground level (AGL) because of the effect of Earth curvature. Consequently, much of the lower atmosphere (1-3 km AGL) cannot be observed by the NEXRAD. To overcome the fundamental coverage limitations of today's weather surveillance radars, and improve the spatial and temporal resolution issues, at urban scale, the National Science Foundation Engineering Research Center (NSF-ERC) for Collaborative Adaptive Sensing of the Atmosphere (CASA) has embarked the development of Dallas-Fort worth (DFW) urban remote sensing network to conduct high-resolution sensing in the lower atmosphere for a metropolitan environment, communicate high resolution observations and nowcasting of severe weather including flash floods, hail storms and high wind events. Being one of the largest inland metropolitan areas in the U.S., the DFW Metroplex is home to over 6.5 million people by 2012 according to the North Central Texas Council of Governments (NCTCOG). It experiences a wide range of natural weather hazards, including urban flash flood, high wind, tornado, and hail, etc. Successful monitoring of the rapid changing meteorological conditions in such a region is necessary for emergency management and decision making. Therefore, it is an ideal location to investigate the impacts of hazardous weather phenomena, to enhance resilience in an urban setting and demonstrate the CASA concept in a densely populated urban environment. The DFW radar network consists of 8 dual-polarization X-band weather radars and standard NEXRAD S-band radar, covering the greater DFW metropolitan region. This paper will present high resolution observation of tornado, urban flood, hail storm and damaging wind event all within the

The Place Where Hope Lives

Science.gov (United States)

... Inn at NIH comforts kids and their families. Children need the comfort and security of their families—especially when they are being treated for a life-threatening illness far from home. The Children's Inn is a private, non-profit, family-centered ...

HOTEL INFORMATION

Institute of Scientific and Technical Information of China (English)

2007-01-01

Holiday Inn Chang An West Beijing On March 28,Conformity Assessment Services Co.under China Certification and Inspection Group held a grand ceremony to award certificates to Holiday Inn Chang An West Beijing,which has successfully passed the four managem

Understanding the Function of Emotional Eating: Does it Buffer the Stress Response and Help Us Cope

Science.gov (United States)

2008-05-09

potato chips are foods that are considered Emotional Eating and Coping 21 unhealthy foods to avoid, whereas grapes and dry roasted peanuts...is Tracey eating when at the motel when he yells at her and the baby? a) fried chicken b) hamburgers c) candy d) ice cream 6) When Tracey

10 CFR 434.516 - Building exterior envelope.

Science.gov (United States)

2010-01-01

... Buildings for calculating the Energy Cost Budget. In calculating the Design Energy Consumption of the... assumptions for calculating the Energy Cost Budget and default assumptions for the Design Energy Consumption... without operable windows shall be assumed to be 0.038 cfm/ft2 of gross exterior wall. Hotels/motels and...

15 CFR 310.3 - Applications for Federal recognition.

Science.gov (United States)

2010-01-01

...., number of hotel and motel units, number and type of restaurants, health facilities, etc.); (ii) evidence... and operation of the exposition. Actual “no strike” pledges are desirable. 9. Exhibit No. 9. A... the host community during the development and operation of the exposition. [40 FR 34107, Aug. 14, 1975...

Dgroup: DG01455 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available 212 ... Norepinephrine ... D00076 ... Noradrenaline (JP17); Norepinephrine (INN) ... D05206 ... Norepinephrine bitartr...USP); Isoprenaline sulfate (JAN) ... D02150 ... l-Isoprenaline hydrochloride (JP17) ... DG00212 ... Norepinephrine ... D00076 ... Noradrenaline...DG00212 ... Norepinephrine ... D00076 ... Noradrenaline (JP17); Norepinephrine (INN) ...

En ny flugt ind i skoven

DEFF Research Database (Denmark)

Haarder, Jon Helt

2008-01-01

Thure Erik Lund: IND. (Inn). Oversat fra norsk af Sara Koch. 192 sider, 199 kr. Gyldendal. UDKOMMER I DAG. Fire stjerner......Thure Erik Lund: IND. (Inn). Oversat fra norsk af Sara Koch. 192 sider, 199 kr. Gyldendal. UDKOMMER I DAG. Fire stjerner...

InN-based heterojunction photodetector with extended infrared response

KAUST Repository

Hsu, Lung-Hsing

2015-11-21

© 2015 Optical Society of America. The combination of ZnO, InN, and GaN epitaxial layers is explored to provide long wavelength photodetection capability in the GaN based materials. Growth temperature optimization was performed to obtain the best quality of InN epitaxial layer in the MOCVD system. The temperature dependent photoluminescence (PL) can provide the information about thermal quenching in the InN PL transitions and at least two nonradiative processes can be observed. X-ray diffraction and energy dispersive spectroscopy are applied to confirm the inclusion of indium and the formation of InN layer. The band alignment of such system shows a typical double heterojunction, which is preferred in optoelectronic device operation. The photodetector manufactured by this ZnO/GaN/InN layer can exhibit extended long-wavelength quantum efficiency, as high as 3.55%, and very strong photocurrent response under solar simulator illumination.

InN-based heterojunction photodetector with extended infrared response

KAUST Repository

Hsu, Lung-Hsing; Kuo, Chien-Ting; Huang, Jhih-Kai; Hsu, Shun-Chieh; Lee, Hsin-Ying; Kuo, Hao-Chung; Lee, Po-Tsung; Tsai, Yu-Lin; Hwang, Yi-Chia; Su, Chen-Feng; He, Jr-Hau; Lin, Shih-Yen; Cheng, Yuh-Jen; Lin, Chien-Chung

2015-01-01

© 2015 Optical Society of America. The combination of ZnO, InN, and GaN epitaxial layers is explored to provide long wavelength photodetection capability in the GaN based materials. Growth temperature optimization was performed to obtain the best quality of InN epitaxial layer in the MOCVD system. The temperature dependent photoluminescence (PL) can provide the information about thermal quenching in the InN PL transitions and at least two nonradiative processes can be observed. X-ray diffraction and energy dispersive spectroscopy are applied to confirm the inclusion of indium and the formation of InN layer. The band alignment of such system shows a typical double heterojunction, which is preferred in optoelectronic device operation. The photodetector manufactured by this ZnO/GaN/InN layer can exhibit extended long-wavelength quantum efficiency, as high as 3.55%, and very strong photocurrent response under solar simulator illumination.

HOTEL INFORMATION

Institute of Scientific and Technical Information of China (English)

无

2010-01-01

The Holiday Inn Beijing Focus Square Holiday Inn Beijing Focus Square is the newest and tallest international mid-scale hotel at Wangjing’s famous business hub which is within walking distance of many multinational companies and surrounded by a variety of dining and shopping outlets.

41 CFR 301-11.15 - What expenses may be considered part of the daily lodging cost when I rent on a long-term basis?

Science.gov (United States)

2010-07-01

... Public Contracts and Property Management Federal Travel Regulation System TEMPORARY DUTY (TDY) TRAVEL... 41 Public Contracts and Property Management 4 2010-07-01 2010-07-01 false What expenses may be... the price of a hotel/motel room in the area concerned, the cost of special user fees (e.g., cable TV...

VIKOR Method for Interval Neutrosophic Multiple Attribute Group Decision-Making

Directory of Open Access Journals (Sweden)

Yu-Han Huang

2017-11-01

Full Text Available In this paper, we will extend the VIKOR (VIsekriterijumska optimizacija i KOmpromisno Resenje method to multiple attribute group decision-making (MAGDM with interval neutrosophic numbers (INNs. Firstly, the basic concepts of INNs are briefly presented. The method first aggregates all individual decision-makers’ assessment information based on an interval neutrosophic weighted averaging (INWA operator, and then employs the extended classical VIKOR method to solve MAGDM problems with INNs. The validity and stability of this method are verified by example analysis and sensitivity analysis, and its superiority is illustrated by a comparison with the existing methods.

Imidacloprid affects the functional response of predator Podisus nigrispinus (Dallas) (Heteroptera: Pentatomidae) to strains of Spodoptera frugiperda (J.E. Smith) on Bt cotton.

Science.gov (United States)

Malaquias, J B; Ramalho, F S; Omoto, C; Godoy, W A C; Silveira, R F

2014-03-01

Podisus nigrispinus (Dallas) (Heteroptera: Pentatomidae) is one of the most common asopine species in the neotropical region and its occurrence was reported in several countries of South and Central America, as an important biological control agent for many crops. This study was carried out to identify the imidacloprid impacts on the functional response of predator P. nigrispinus fed on Spodoptera frugiperda (J.E. Smith) (Lepidoptera: Noctuidae) strain resistant to lambda-cyhalothrin, on Bt cotton expressing Cry1Ac (Bollgard(®)). Spodoptera frugiperda larvae were used in the following conditions: resistant (1) and susceptible (2) strains to lambda-cyhalothrin fed on Bollgard(®) cotton leaves (DP 404 BG); and resistant (3) and susceptible (4) strains to lambda-cyhalothrin fed on non-genetically modified cotton leaves (cultivar DP4049). The predatory behavior of P. nigrispinus was affected by imidacloprid and the type II asymptotic curve was the one that best described the functional response data. Handling time (T h ) of predator females did not differ among treatments in the presence of imidacloprid. The attack rate did decrease, however, due to an increase in the density of larvae offered. Regardless of the treatment (S. frugiperda strain or cotton cultivar), the predation of P. nigrispinus females on S. frugiperda larvae was significantly lower when exposed to imidacloprid, especially at a density of 16 larvae/predator. The predation behavior of P. nigrispinus on S. frugiperda larvae is affected by the insecticide imidacloprid showing that its applications should be used in cotton crop with caution.

Lodging in Boulder and Louisville, Colorado | NREL

Science.gov (United States)

Leadership Community Education Center Economic Impact Environment, Health, & Safety Sustainability Energy : 720-587-3014 Comfort Inn 1196 W. Dillon Road Louisville, CO 80027 Phone: 303-604-0181 Courtyard by Marriott 948 West Dillon Road Louisville, CO 303-604-0007 Hampton Inn 912 W. Dillon Road Louisville, CO

Something of Value: How Franchise Sellers Make Training Pay

Science.gov (United States)

Berger, Gladys

1975-01-01

Training can be the most important benefit included in the purchase of a franchise. Several of these training programs used by franchise sellers (Castro Convertibles, Roto-Rooter, H and R Block, Dunhill Personnel Systems Inc., Carvel, Holiday Inns, Sheraton Inns Inc., McDonald's) are discussed. (Author/BP)

Influence of the GaN spacer thickness on the structural and photoluminescence properties of multi-stack InN/GaN quantum dots

International Nuclear Information System (INIS)

Ke, Wen-Cheng; Lee, Shuo-Jen; Chen, Shiow-Long; Kao, Chia-Yu; Houng, Wei-Chung; Wei, Chih-An; Su, Yi-Ru

2012-01-01

Highlights: ► We present structural and photoluminescence characteristics of multi-stack InN/GaN QDs. ► A single crystalline 10-nm thick GaN capping layer is grown on the InN QDs. ► The PL intensity of the three-layer stacked sample is about 3 times that of the single-layer sample. - Abstract: This paper reports the structural and photoluminescence (PL) characteristics of single-layer and multi-stack InN/GaN quantum dots (QDs) with varying spacer thickness. A single crystalline 10-nm thick GaN capping layer is grown on the InN QDs by the flow-rate modulation epitaxy (FME) method. The PL peak is red shifted down to 18 meV and its full width at half maximum (FWHM) was narrowed from 104 meV to 77 meV as increasing GaN capping layer thickness to 20-nm. The red-shift and the linewidth narrowing of the PL spectra for the single-layer InN QDs as a result of the increase in capping thickness are believed to be due to the fact that the GaN capping layer decreases the surface defect density thereby decreasing the surface electron concentration of the InN QDs. However, the PL intensity decreases rapidly with the increase in GaN spacer thickness for the three-layer stacked InN/GaN QDs. Because of kinetic roughening, the 20-nm thick GaN capping layer shows a roughened surface. This roughened GaN capping layer degrades the InN QDs growth in the next layer of multi-stack InN QDs. In addition, the increased compressive strain on the InN QDs with the increase in GaN spacer thickness increases the defect density at the InN/GaN capped interface and will further decrease the PL intensity. After the GaN spacer thickness is modified, the PL intensity of the three-layer stacked sample with a 10-nm thick GaN spacer layer is about 3 times that of the single-layer sample.

76 FR 12340 - Gulf of Mexico Fishery Management Council; Public Meetings

Science.gov (United States)

2011-03-07

...: Tuesday, March 22, 2011, Hilton St. Petersburg Carillon Parkway, 950 Lake Carillon Drive, St. Petersburg...., Key West, FL, telephone: (305) 295-5000; Monday, March 28, 2011, Hilton Garden Inn, 4535 Williams Blvd., Kenner, LA, telephone: (504) 712-0504 Tuesday, March 29, 2011, Hilton Garden Inn, 14108 Airport Rd...

Journal of Earth System Science | Indian Academy of Sciences

Indian Academy of Sciences (India)

Present paper uses powerful technique of interval neural network (INN) to simulate and estimate structural response of multi-storey shear buildings subject to earthquake motion. The INN is first trained for a real earthquake data, viz., the ground acceleration as input and the numerically generated responses of different ...

Dgroup: DG01746 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available 48 ... Loop diuretic ... Loop diuretics, sulfonamide SLC12A1 (NKCC2) [HSA:6557] [KO:K14425] SLC12A2 (NKCC1) [HSA:6558] [KO:K10951] ... ...P17/USP/INN) ... D01634 ... Piretanide (JAN/USAN/INN) Cardiovascular agent ... DG01690 ... Sulfonamide diuretic ... DG017

77 FR 36396 - Safety Zones; Fireworks Displays in Captain of the Port Long Island Sound Zone

Science.gov (United States)

2012-06-19

... viewing or submitting material to the docket, call Renee V. Wright, Program Manager, Docket Operations... Fireworks. South Bay off Snapper Inn Restaurant, Oakdale, NY. 5. North Bay 4th of July Fireworks... p.m. Location: A point on the Connetquot River off Snapper Inn Restaurant, Oakdale, NY in...

OS MOTÉIS EM CAMPO MOURÃO-PR COMO OPÇÃO PARA HOSPEDAGEM E EVENTOS

Directory of Open Access Journals (Sweden)

Aline Angeli

2016-09-01

Full Text Available Esta pesquisa buscou analisar nos sete motéis da cidade de Campo Mourão-PR, as condições para hospedagem de turistas e os espaços para a realização de eventos. Para isso foram avaliados os serviços ofertados, a infraestrutura disponível, o interesse do cliente e a viabilidade do uso dos motéis para a realização de eventos e hospedagem. Como metodologia de pesquisa, foram utilizados: o levantamento histórico e legal dos motéis; a observação como cliente oculto; pesquisa através de rede social e e-mail; e, por m, a entrevista e observação orientada. Veri cou-se que, de forma geral, os serviços prestados estão dentro de um padrão aceitável pelos clientes, porém há falta de espaço apropriado para a realização de um evento nesse ambiente. Palavras-chave: Motel. Eventos em Motel. Hospedagem alternativa.

Chemical synthesis of hexagonal indium nitride nanocrystallines at low temperature

Science.gov (United States)

Wang, Liangbiao; Shen, Qianli; Zhao, Dejian; Lu, Juanjuan; Liu, Weiqiao; Zhang, Junhao; Bao, Keyan; Zhou, Quanfa

2017-08-01

In this study, hexagonal indium nitride nanocystallines with high crystallinity have been prepared by the reaction of InCl3·4H2O, sulfur and NaNH2 in an autoclave at 160 °C. The crystal structures and morphologies of the obtained InN sample are characterized by X-ray diffraction and scanning electron microscope. As InCl3·4H2O is substituted by In(NO3)3·4.5H2O, InN nanocrystallines could also be obtained by using the similar method. The photoluminescence spectrum shows that the InN emits a broad peak positioned at 2.3 eV.

Supplemental Environmental Impact Statement, Guam and Commonwealth of the Northern Mariana Islands Military Relocation (2012 Roadmap Adjustments)

Science.gov (United States)

2015-07-01

whether for cultural practices, recreation, tourism , or academic study would also diminish the cultural resources of Guam. MITIGATION MEASURES AND...opportunities for important cultural practices. Reduced access to cultural sites, whether for cultural practices, recreation, tourism , or academic study...playgrounds, active sports areas, parks, residences, motels, hotels, schools, churches, places of worship, libraries, and hospitals. C 72 (Exterior

29 CFR 1904.5 - Determination of work-relatedness.

Science.gov (United States)

2010-07-01

... poisoning from food supplied by the employer, the case would be considered work-related. (v) The injury or... hotel, motel, or into an other temporary residence, he or she establishes a “home away from home.” You... temporary residence for their work-relatedness in the same manner as you evaluate the activities of a non...

Growth kinetics and structural perfection of (InN){sub 1}/(GaN){sub 1–20} short-period superlattices on +c-GaN template in dynamic atomic layer epitaxy

Energy Technology Data Exchange (ETDEWEB)

Kusakabe, Kazuhide; Hashimoto, Naoki; Wang, Ke; Imai, Daichi [Center for SMART Green Innovation Research, Chiba University, 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522 (Japan); Itoi, Takaomi [Graduate School of Engineering, Chiba University, 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522 (Japan); Yoshikawa, Akihiko, E-mail: yoshi@faculty.chiba-u.jp [Center for SMART Green Innovation Research, Chiba University, 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522 (Japan); Graduate School of Engineering, Kogakuin University, Hachioji, Tokyo 192-0015 (Japan)

2016-04-11

The growth kinetics and structural perfection of (InN){sub 1}/(GaN){sub 1–20} short-period superlattices (SPSs) were investigated with their application to ordered alloys in mind. The SPSs were grown on +c-GaN template at 650 °C by dynamic atomic layer epitaxy in conventional plasma-assisted molecular beam epitaxy. It was found that coherent structured InN/GaN SPSs could be fabricated when the thickness of the GaN barrier was 4 ML or above. Below 3 ML, the formation of SPSs was quite difficult owing to the increased strain in the SPS structure caused by the use of GaN as a template. The effective or average In composition of the (InN){sub 1}/(GaN){sub 4} SPSs was around 10%, and the corresponding InN coverage in the ∼1 ML-thick InN wells was 50%. It was found that the effective InN coverage in ∼1 ML-thick InN wells could be varied with the growth conditions. In fact, the effective In composition could be increased up to 13.5%, i.e., the corresponding effective InN coverage was about 68%, by improving the capping/freezing speed by increasing the growth rate of the GaN barrier layer.

Integration of contributed data with HEC-RAS hydrodynamic model for flood inundation and damage assessment: 2015 Dallas Texas Case Study

Science.gov (United States)

Sava, E.; Thornton, J. C.; Kalyanapu, A. J.; Cervone, G.

2016-12-01

Transportation infrastructure networks in urban areas are highly sensitive to natural disasters, yet are a very critical source for the success of rescue, recovery, and renovation operations. Therefore, prompt restoration of such networks is of high importance for disaster relief services. Satellite and aerial images provide data with high spatial and temporal resolution and are a powerful tool for monitoring the environment and mapping the spatio-temporal variability of the Earth's surface. They provide a synoptic overview and give useful environmental information for a wide range of scales, from entire continents to urban areas, with spatial pixel resolutions ranging from kilometers to centimeters. However, sensor limitations are often a serious drawback since no single sensor offers the optimal spectral, spatial, and temporal resolution at the same time. Specific data may not be collected in the time and space most urgently required and/or may it contain gaps as a result of the satellite revisit time, atmospheric opacity, or other obstructions. In this study, the feasibility of integrating multiple sources of contributed data including remotely sensed datasets and open-source geospatial datasets, into hydrodynamic models for flood inundation simulations is assessed. The 2015 Dallas floods that caused up to $61 million dollars in damage was selected for this study. A Hydraulic Engineering Center - River Analysis System (HEC-RAS) model was developed for the study area, using reservoir surcharge releases and geometry provided by the U.S. Army Corps of Engineers Fort Worth District. The simulated flood inundation is compared with the "contributed data" for the location (such as Civil Air Patrol data and WorldView 3 dataset) which indicated the model's lack of representing lateral inflows near the upstream section. An Artificial Neural Network (ANN) model is developed that used local precipitation and discharge values in the vicinity to estimate the lateral flows

77 FR 16249 - Notice of Cancellation of Customs Broker Licenses

Science.gov (United States)

2012-03-20

... Dependable International Services 12574 New Orleans. and Transport, Inc.. Professional Customs Brokers, Inc.... Horizon Logistics, LLC 28432 Dallas. Sandra L. Smith 15266 Dallas. Barry E. Booth 09627 San Francisco...

Quality Assurance Practices for the AN/FMQ-7 Optical Telescope Procurement

National Research Council Canada - National Science Library

1994-01-01

... contract quality assurance practices by the Defense Contract Management Mea Operations Dallas, Texas (DCMAO Dallas), on an Air Force contract for upgrading the Air Force's solar electro-optical network...

Longitudinal polar optical phonons in InN/GaN single and double het- erostructures

Energy Technology Data Exchange (ETDEWEB)

Ardali, Sukru; Tiras, Engin [Department of Physics, Faculty of Science, Anadolu University, Yunus Emre Campus, Eskisehir 26470 (Turkey); Gunes, Mustafa; Balkan, Naci [School of Computer Science and Electronic Engineering, University of Essex, Wivenhoe Park, Colchester CO4 3SQ (United Kingdom); Ajagunna, Adebowale Olufunso; Iliopoulos, Eleftherios; Georgakilas, Alexandros [Microelectronics Research Group, IESL, FORTH and Physics Department, University of Crete, P.O. Box 1385, 71110 Heraklion-Crete (Greece)

2011-05-15

Longitudinal optical phonon energy in InN epi-layers has been determined independently from the Raman spectroscopy and temperature dependent Hall mobility measurements. Raman spectroscopy technique can be used to obtain directly the LO energy where LO phonon scattering dominates transport at high temperature. Moreover, the Hall mobility is determined by the scattering of electrons with LO phonons so the data for the temperature dependence of Hall mobility have been used to calculate the effective energy of longitudinal optical phonons.The samples investigated were (i) single heterojunction InN with thicknesses of 1.08, 2.07 and 4.7 {mu}m grown onto a 40 nm GaN buffer and (ii) GaN/InN/AlN double heterojunction samples with InN thicknesses of 0.4, 0.6 and 0.8 {mu}m. Hall Effect measurements were carried out as a function of temperature in the range between T = 1.7 and 275 K at fixed magnetic and electric fields. The Raman spectra were obtained at room temperature. In the experiments, the 532 nm line of a nitrogen laser was used as the excitation source and the light was incident onto the samples along of the growth direction (c-axis). The results, obtained from the two independent techniques suggest the following: (1) LO phonon energies obtained from momentum relaxation experiments are generally slightly higher than those obtained from the Raman spectra. (2) LO phonon energy for the single heterojunctions does not depend on the InN thickness. (3) In double heterostructures, with smaller InN thicknesses and hence with increased strain, LO phonon energy increases by 3% (experimental accuracy is < 1%) when the InN layer thickness increases from 400 to 800 nm (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Patient Safety in Medication Nomenclature: Orthographic and Semantic Properties of International Nonproprietary Names.

Directory of Open Access Journals (Sweden)

Rachel Bryan

Full Text Available Confusion between look-alike and sound-alike (LASA medication names (such as mercaptamine and mercaptopurine accounts for up to one in four medication errors, threatening patient safety. Error reduction strategies include computerized physician order entry interventions, and 'Tall Man' lettering. The purpose of this study is to explore the medication name designation process, to elucidate properties that may prime the risk of confusion.We analysed the formal and semantic properties of 7,987 International Non-proprietary Names (INNs, in relation to naming guidelines of the World Health Organization (WHO INN programme, and have identified potential for errors. We explored: their linguistic properties, the underlying taxonomy of stems to indicate pharmacological interrelationships, and similarities between INNs. We used Microsoft Excel for analysis, including calculation of Levenshtein edit distance (LED. Compliance with WHO naming guidelines was inconsistent. Since the 1970s there has been a trend towards compliance in formal properties, such as word length, but longer names published in the 1950s and 1960s are still in use. The stems used to show pharmacological interrelationships are not spelled consistently and the guidelines do not impose an unequivocal order on them, making the meanings of INNs difficult to understand. Pairs of INNs sharing a stem (appropriately or not often have high levels of similarity (<5 LED, and thus have greater potential for confusion.We have revealed a tension between WHO guidelines stipulating use of stems to denote meaning, and the aim of reducing similarities in nomenclature. To mitigate this tension and reduce the risk of confusion, the stem system should be made clear and well ordered, so as to avoid compounding the risk of confusion at the clinical level. The interplay between the different WHO INN naming principles should be further examined, to better understand their implications for the problem of LASA

Dgroup: DG00410 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available DG00410 Chemical ... DGroup Methylprednisolone ... D00407 ... Methylprednisolone (JP17/USP.../INN) ... D00751 ... Methylprednisolone sodium succinate (JAN/USP) ... D00979 ... Methylprednisolone acetate (JAN/US...P) ... D05000 ... Methylprednisolone hemisuccinate (USP); Methylprednisolone succinate (JP17) D05001 ... Methylprednisolo...ne sodium phosphate (USAN) D05002 ... Methylprednisolone suleptanate (USAN/INN) D07203 ... Methylprednisol

78 FR 34349 - Schedules for Atlantic Shark Identification Workshops and Protected Species Safe Handling...

Science.gov (United States)

2013-06-07

...; Kenner, LA; Charleston, SC; and Corpus Christi, TX. See SUPPLEMENTARY INFORMATION for further details on... Inn & Suites, 3312 Vista Drive, Rosenberg, TX 77471. 3. September 12, 2013, 12 p.m.-4 p.m., Holiday..., Kenner, LA 70062. 5. September 10, 2013, 9 a.m.-5 p.m., Holiday Inn, 301 Savannah Highway, Charleston, SC...

Regulering, ikke kriminalisering

DEFF Research Database (Denmark)

Ludvigsen, Stian Skår; Sieberg, Katri K.

2007-01-01

Kriminalisering av horekunder vil føre til at markedet for seksuelle tjenester skyves inn i det skjulte.  Skjer dette, kan kostnadene bli høye.......Kriminalisering av horekunder vil føre til at markedet for seksuelle tjenester skyves inn i det skjulte.  Skjer dette, kan kostnadene bli høye....

78 FR 36748 - Caribbean Fishery Management Council; Scoping Meetings

Science.gov (United States)

2013-06-19

.... ADDRESSES: The scoping meetings will be held in Puerto Rico and in the U.S. Virgin Islands. See....--Holiday Inn Ponce & Tropical Casino, 3315 Ponce By Pass, Ponce, Puerto Rico. July 10, 2013-7 p.m.--Mayag[uuml]ez Holiday Inn, 2701 Hostos Avenue, Mayag[uuml]ez, Puerto Rico. July 11, 2013-7 p.m.--Asociaci...

75 FR 56111 - Notice of Proposals to Engage in Permissible Nonbanking Activities or to Acquire Companies that...

Science.gov (United States)

2010-09-15

... the Federal Reserve Bank of Dallas, the entry for Mason National Bancshares, Mason, Texas, is revised... Pearl Street, Dallas, Texas 75201-2272: 1. Mason National Bancshares, Mason, Texas, to engage de novo in...

76 FR 61038 - Standard Instrument Approach Procedures, and Takeoff Minimums and Obstacle Departure Procedures...

Science.gov (United States)

2011-10-03

... types of SIAPs and the effective dates of the, associated Takeoff Minimums and ODPs. This amendment also..., TN, Memphis Intl, Takeoff Minimums and Obstacle DP, Amdt 3 Dallas, TX, Dallas-Love Field, Takeoff...

75 FR 51103 - Notice of Public Meetings for the National Park Service (NPS) Alaska Region's Subsistence...

Science.gov (United States)

2010-08-18

... SRC and Wrangell-St. Elias SRC plan to meet to develop and continue work on National Park Service (NPS... reconvene on Thursday, October 7, 2010, from 9 a.m. to 5 p.m. or until business is completed. This meeting will be held at Fast Eddy's Motel and Restaurant located at Mile 1313 on the Alaska Highway in Tok, AK...

Tecnocrazia e politica in Italia dalla crisi del 1907 al Primo Dopoguerra = Technocracy and political crisis in Italy from 1907 till the early after World War

Directory of Open Access Journals (Sweden)

Marcello Benegiamo

2014-12-01

Full Text Available Uscito a pezzi dalla pesante crisi finanziaria e industriale del 1907, che aveva messo a nudo i limiti della struttura economica del Paese, il capitalismo industriale italiano elaborò un programma, portato avanti fino al primo dopoguerra, che prevedeva l’instaurazione di un governo di tecnocrati. Questo avrebbe dovuto trainare il Paese fuori dalla crisi, pianificarne l’economia e trasformarlo in una grande potenza industriale, con forti connotazioni imperialistiche. Segnali in tale direzione si erano registrati anche nei decenni precedenti, tra fine Ottocento e inizi Novecento, quando ebbe inizio un processo di concentrazione nel settore siderurgico e meccanico. Un percorso peraltro stimolato dalle commesse statali sempre più consistenti (Galli Della Loggia, 1970; Battilossi, 1999; Amatori e Colli, 1999; Bolchini, 2002. La crisi industriale e finanziaria del 1907 e la recessione a livello mondiale che ne seguì, accelerarono la soluzione tecnocratica, che prevedeva un’alleanza, più o meno stretta, con una parte della classe politica e l’entrata in guerra. Negli anni immediatamente seguenti il conflitto, il potere dei tecnocrati sulla scena politica italiana sembrò accrescersi notevolmente, soprattutto quando il governo progettò un programma di espansione economica nelle regioni del Caucaso, nei Balcani e nel Levante ex ottomano, territori in grado di fornire materie prime e di assorbire la produzione italiana in eccesso rispetto alle richieste di un mercato interno asfittico. La collaborazione tra mondo imprenditoriale, bancario e politico non produsse il risultato sperato. La caduta del governo Nitti e il ruolo destabilizzante e filotedesco della Banca Commerciale Italiana nell’Est europeo e nel Caucaso furono tra le cause principali che impedirono il decollo del progetto tecnocratico, provocando una dura reazione da parte dei fratelli Perrone alla guida del gruppo Ansaldo. Heavily Weakened by the financial and industrial crisis

Growth and characterisation of group-III nitride-based nanowires for devices

Energy Technology Data Exchange (ETDEWEB)

Meijers, R J

2007-08-30

One of the main goals of this thesis was to get more insight into the mechanisms driving the growth of nitride nanowires by plasma-assisted molecular beam epitaxy (PA-MBE). The influence of the group-III and group-V flux as well as the substrate temperature T{sub sub} has been studied leading to the conclusion that the III-V ratio determines the growth mode. Ga desorption limits the temperature range to grow GaN nanowires and dissociation of InN is the limiting factor for InN nanowire growth. A reduction of the surface diffusivity on polar surfaces under N-rich conditions explains the anisotropic growth. Growth kinetics of the nanowires show that there are two important contributions to the growth. The first is growth by direct impingement and its contribution is independent of the nanowire diameter. The second contribution comes from atoms, which absorb on the substrate or wire sidewalls and diffuse along the sidewalls to the top of the wire, which acts as an effective sink for the adatoms due to a reduced surface mobility on the polar top of the wires. This diffusion channel, which is enhanced at higher T{sub sub}, becomes more significant for smaller wire diameters, because its contribution scales like 1/d. Experiments with an interruption of the growth and sharp interfaces in TEM images of heterostructures show that the suggestion in literature of a droplet-mediated PA-MBE nitride growth has to be discarded. Despite a thin amorphous silicon nitride wetting layer on the substrate surface, both GaN and InN nanowires grow in the wurtzite structure and epitaxially in a one-to-one relation to the Si(111) substrate surface. There is no evidence for cubic phases. TEM images and optical studies display a high crystalline and optical quality of GaN and InN nanowires. The substrate induces some strain in the bottom part of the nanowires, especially in InN due to the lower T{sub sub} than for GaN, which is released without the formation of dislocations. Only some stacking

Business Case Analysis: Increasing Air Force Dining Hall Use as an Alternative to Closure

Science.gov (United States)

2011-12-01

work on 3 new food stations at the Sierra Inn, as well as a daily buffet line. They introduced a new deli, grill, and salad bar as well as a “Just4U...courses, starches, and vegetables, it is not uncommon for the Sierra Inn to offer six to eight main courses, a sandwich bar, soup and salad bar, and

78 FR 58332 - Changes in Flood Hazard Determinations

Science.gov (United States)

2013-09-23

..., TX 75146. Dallas (FEMA Docket No.: B- Town of Sunnyvale (12- The Honorable Jim Phaup, Town Hall, 537..., TX 75182. Collins Road, Sunnyvale, TX 75182. Kaufman (FEMA Docket No.: B- City of Dallas (12-06- The...

76 FR 8291 - Standard Instrument Approach Procedures, and Takeoff Minimums and Obstacle Departure Procedures...

Science.gov (United States)

2011-02-14

... specifies the types of SIAPs and the effective dates of the associated Takeoff Minimums and ODPs. This..., Takeoff Minimums and Obstacle DP, Orig Dallas, TX, Dallas Love Field, RNAV (GPS) Z RWY 13L, Orig-B...

Prime Contract Awards Alphabetically by Contractor, by State or Country, and Place, Fiscal Year 1987. Part 17. Southwest Ordnance Supply-Taylor-Made Hose, Incorporated.

Science.gov (United States)

1987-01-01

COI0)000 .....0)00)0)0)00)CO0)0M0)0)0 0 0 0 0 0 0 -0 004 �I( lf~l- 0 0 0 0 0 0 GAO 001,- I-I I 04) 0 𔃺)00) 1 4 .I ww1- 0)00) I C14 ’) N 4 -1 0) N4...LAVLOc)n 40 MI-4 0 4 04 N 4 NJ(’J 0 C IN N 1 1 1 nCci ( CA INN "N INN eq4 IN N C04(󈧈 M 740-40 IC4 4 ൌ’J" (𔃾INNV (𔃾 INN C/-J (d)N NC𔃾("’C44 (- JiNI "N

Self-annihilation of inversion domains by high energy defects in III-Nitrides

International Nuclear Information System (INIS)

Koukoula, T.; Kioseoglou, J.; Kehagias, Th.; Komninou, Ph.; Ajagunna, A. O.; Georgakilas, A.

2014-01-01

Low-defect density InN films were grown on Si(111) by molecular beam epitaxy over an ∼1 μm thick GaN/AlN buffer/nucleation layer. Electron microscopy observations revealed the presence of inverse polarity domains propagating across the GaN layer and terminating at the sharp GaN/InN (0001 ¯ ) interface, whereas no inversion domains were detected in InN. The systematic annihilation of GaN inversion domains at the GaN/InN interface is explained in terms of indium incorporation on the Ga-terminated inversion domains forming a metal bonded In-Ga bilayer, a structural instability known as the basal inversion domain boundary, during the initial stages of InN growth on GaN

78 FR 28135 - Standard Instrument Approach Procedures, and Takeoff Minimums and Obstacle Departure Procedures...

Science.gov (United States)

2013-05-14

... the affected CFR sections and specifies the types of SIAPs and the effective dates of the, associated..., Takeoff Minimums and Obstacle DP, Amdt 2 Dallas, TX, Dallas Love Field, ILS OR LOC RWY 31R, ILS RWY 31R...

76 FR 21234 - Standard Instrument Approach Procedures, and Takeoff Minimums and Obstacle Departure Procedures...

Science.gov (United States)

2011-04-15

... types of SIAP and the corresponding effective dates. This amendment also identifies the airport and its... Greenville Pitt-Greenville..... 1/2789 3/23/11 ILS OR LOC RWY 20, Amdt 4 5-May-11 TX Dallas Dallas Love Field...

Design strategies for enhancing carrier localization in InGaN-based light-emitting diodes

International Nuclear Information System (INIS)

Yang, Yujue; Ma, Ping; Wei, Xuecheng; Yan, Dan; Wang, Yafang; Zeng, Yiping

2014-01-01

By designing the quantum well structure with the introduction of GaN and InN interlayers into the InGaN wells, the carrier localization is enhanced by demonstrating temperature-dependent photoluminescence (PL) measurements. Two emission peaks corresponding to In-rich localized state and quantum well ground state emissions are observed from the electroluminescence (EL) spectra, which demonstrates that the phase separation takes place in our designed structures and the enhanced phase separation is most likely the dominated mechanism for the formation of In-rich localized states, accounting for the stronger localization and hence improved light-emission characteristics. Therefore, it is suggested that enhancing localization is possible, to some extent, by modulating the QW structures with the introduction of the GaN and InN interlayers for superior light-emission performances in InGaN-based light-emitting diodes (LEDs). Moreover, the nonradiative channel probably associated with InN droplet is proved to be existent from the Arrhenius plots in our InGaN–delta-InN MQW structure. - Highlights: • By designing the quantum well structure with the introduction of GaN and InN interlayers into the InGaN wells, the carrier localization is enhanced. • Two emission peaks observed from electroluminescence (EL) spectra demonstrate that the enhanced phase separation is most likely the dominated mechanism for the formation of In-rich localized states, accounting for the stronger localization. • The nonradiative channel associated with InN droplet is proved to be existent from the Arrhenius plots

InN/GaN short-period superlattices as ordered InGaN ternary alloys

International Nuclear Information System (INIS)

Kusakabe, Kazuhide; Imai, Daichi; Wang, Ke; Yoshikawa, Akihiko

2016-01-01

Coherent (InN) 1 /(GaN) n short-period superlattices (SPSs) were successfully grown through dynamic atomic layer epitaxy (D-ALEp) mode by RF-plasma molecular beam epitaxy (MBE), where GaN layer thicknesses n were thinned down to 4 monolayer (ML). After this achievement, we demonstrated quasi-ternary InGaN behavior in their photoluminescence (PL) spectra for the first time. It was found interestingly that GaN layer thickness of n = 4 ML was the criterion both for structural control and continuum-band formation. Although highly lattice-mismatched InN/GaN interfaces easily introduce relaxation in (InN) 1 /(GaN) 4 SPSs during growth depending on the dynamic surface stoichiometry condition, this problem was overcome by precise control/removal of fluid-like residual In/Ga metals on the growth front with in-situ monitoring method. The (InN) 1 /(GaN) n SPSs with n ≥ 7 ML showed a constant PL peak energy around 3.2 eV at 12 K, reflecting discrete electron/hole wavefunctions. On the other hand, the (InN) 1 /(GaN) 4 SPSs indicated the red-shifted PL peak at 2.93 eV at 12 K, which was attributed to the continuum-band state with increasing in the overlap of electrons/hole wavefunctions. This result is concluded that the (InN) 1 /(GaN) 4 SPSs can be considered as ordered InGaN alloys. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Effect of nitrogen addition on the structural, electrical, and optical properties of In-Sn-Zn oxide thin films

Energy Technology Data Exchange (ETDEWEB)

Jia, Junjun, E-mail: jia@chem.aoyama.ac.jp [Graduate School of Science and Engineering, Aoyama Gakuin University, 5-10-1 Fuchinobe, Chuo, Sagamihara, Kanagawa 252-5258 (Japan); Torigoshi, Yoshifumi; Suko, Ayaka; Nakamura, Shin-ichi [Graduate School of Science and Engineering, Aoyama Gakuin University, 5-10-1 Fuchinobe, Chuo, Sagamihara, Kanagawa 252-5258 (Japan); Kawashima, Emi; Utsuno, Futoshi [Advanced Technology Research Laboratories, Idemitsu Kosan Co., Ltd., Sodegaura, Chiba 299-0293 (Japan); Shigesato, Yuzo, E-mail: yuzo@chem.aoyama.ac.jp [Graduate School of Science and Engineering, Aoyama Gakuin University, 5-10-1 Fuchinobe, Chuo, Sagamihara, Kanagawa 252-5258 (Japan)

2017-02-28

Highlights: • Nitrogen addition induces the structure of ITZO film change from amorphous phase to a c-axis oriented InN polycrystalline phase. • Nitrogen addition suppressed the formation of oxygen-related vacancies in ITZO films. • A red-shift in the optical band edge for ITZO films was observed as the nitrogen flow ratio increased, which was due to the generation of InN crystallites. - Abstract: Indium-tin-zinc oxide (ITZO) films were deposited at various nitrogen flow ratios using magnetron sputtering. At a nitrogen flow ratio of 40%, the structure of ITZO film changed from amorphous, with a short-range-ordered In{sub 2}O{sub 3} phase, to a c-axis oriented InN polycrystalline phase, where InN starts to nucleate from an amorphous In{sub 2}O{sub 3} matrix. Whereas, nitrogen addition had no obvious effect on the structure of indium-gallium-zinc oxide (IGZO) films even at a nitrogen flow ratio of 100%. Nitrogen addition also suppressed the formation of oxygen-related vacancies in ITZO films when the nitrogen flow ratio was less than 20%, and higher nitrogen addition led to an increase in carrier density. Moreover, a red-shift in the optical band edge was observed as the nitrogen flow ratio increased, which could be attributed to the generation of InN crystallites. We anticipate that the present findings demonstrating nitrogen-addition induced structural changes can help to understand the environment-dependent instability in amorphous IGZO or ITZO based thin-film transistors (TFTs).

L'ESILIO E LA FRONTIERA NELL'ITALIANITÀ LETTERARIA

African Journals Online (AJOL)

User

idea of state and/or political entity. “Mi sento in esilio in ... era una pena che comportava l'allontanamento permanente o temporaneo del condannato dalla ..... in fuga dall'Istria e dalla Dalmazia) e portare avanti la causa del socialismo reale.

77 FR 31178 - Standard Instrument Approach Procedures, and Takeoff Minimums and Obstacle Departure Procedures...

Science.gov (United States)

2012-05-25

... types of SIAP and the corresponding effective dates. This amendment also identifies the airport and its.../8/12 ILS OR LOC RWY 8R, Amdt 30B. 28-Jun-12......... TX Dallas Dallas Love Field 2/3938 5/8/12 ILS...

Recent Advances on p-Type III-Nitride Nanowires by Molecular Beam Epitaxy

Directory of Open Access Journals (Sweden)

Songrui Zhao

2017-09-01

Full Text Available p-Type doping represents a key step towards III-nitride (InN, GaN, AlN optoelectronic devices. In the past, tremendous efforts have been devoted to obtaining high quality p-type III-nitrides, and extraordinary progress has been made in both materials and device aspects. In this article, we intend to discuss a small portion of these processes, focusing on the molecular beam epitaxy (MBE-grown p-type InN and AlN—two bottleneck material systems that limit the development of III-nitride near-infrared and deep ultraviolet (UV optoelectronic devices. We will show that by using MBE-grown nanowire structures, the long-lasting p-type doping challenges of InN and AlN can be largely addressed. New aspects of MBE growth of III-nitride nanostructures are also discussed.

On-site cell field test support program

Science.gov (United States)

Staniunas, J. W.; Merten, G. P.

1982-09-01

Utility sites for data monitoring were reviewed and selected. Each of these sites will be instrumented and its energy requirements monitored and analyzed for one year prior to the selection of 40 Kilowatt fuel cell field test sites. Analyses in support of the selection of sites for instrumentation shows that many building sectors offered considerable market potential. These sectors include nursing home, health club, restaurant, industrial, hotel/motel and apartment.

Social Networks, Ethnicity, and Entrepreneurship

OpenAIRE

Kerr, William R.; Mandorff, Martin

2016-01-01

We study the relationship between ethnicity, occupational choice, and entrepreneurship. Immigrant groups in the United States cluster in specific business sectors. For example, the concentration of Korean self-employment in dry cleaners is 34 times greater than other immigrant groups, and Gujarati-speaking Indians are similarly 108 times more concentrated in managing motels. We develop a model of social interactions where non-work relationships facilitate the acquisition of sector-specific sk...

75 FR 75699 - Notice of Determinations Regarding Eligibility To Apply for Worker Adjustment Assistance

Science.gov (United States)

2010-12-06

... Workers College Station, TX.. May 19, 2009. from Kelly Services. 74,286 Pearson Education, Glenview, IL......... June 8, 2009. Curriculum Group Division; Pearson, Inc.; Leased Workers from Corestaff. 74,675... Department. 74,722 Allied Marketing Group....... Dallas, TX. 74,739 Chapman Data Services, Inc... Dallas, TX...

Pressure dependence of the refractive index in wurtzite and rocksalt indium nitride

International Nuclear Information System (INIS)

Oliva, R.; Segura, A.; Ibáñez, J.; Artús, L.; Yamaguchi, T.; Nanishi, Y.

2014-01-01

We have performed high-pressure Fourier transform infrared reflectance measurements on a freestanding InN thin film to determine the refractive index of wurtzite InN and its high-pressure rocksalt phase as a function of hydrostatic pressure. From a fit to the experimental refractive-index curves including the effect of the high-energy optical gaps, phonons, free carriers, and the direct (fundamental) band-gap in the case of wurtzite InN, we obtain pressure coefficients for the low-frequency (electronic) dielectric constant ε ∞ . Negative pressure coefficients of −8.8 × 10 −2  GPa −1 and −14.8 × 10 −2  GPa −1 are obtained for the wurtzite and rocksalt phases, respectively. The results are discussed in terms of the electronic band structure and the compressibility of both phases

Dgroup: DG01727 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available DG01727 DGroup Anthraquinone antineoplastic -antrone DG01727.gif DG00701 ... Mitoxantrone ... D08224 ... Mitoxantron...e (INN) ... D02166 ... Mitoxantrone hydrochloride (JAN/USP) ... DG00704 ... Pixantrone ... D05522 ... Pixantron...e (USAN/INN) ... D09654 ... Pixantrone dimaleate (USAN) D02894 ... Ametantrone acetate (USAN) D04685 ... Ledoxantron...e trihydrochloride (USAN) D04783 ... Losoxantrone hydrochloride (USAN) D05510 ... Piroxantron...e hydrochloride (USAN) D06059 ... Teloxantrone hydrochloride (USAN) D06190 ... Topixantrone (USAN/IN

The zombie and his italian half brother: the satiric use of the zombie ...

African Journals Online (AJOL)

... italiana degli anni Novanta, caratterizzata da un consumismo banale e popolata di giovani ossessionati dalla moda e dalla pubblicità. Il saggio si propone di analizzare il racconto nell'ambito del pulp italiano definendone le originali tecniche di demistificazione. Key Words: Pulp Fiction – Gothic Novel – Consumerism ...

75 FR 39946 - Formations of, Acquisitions by, and Mergers of Bank Holding Companies

Science.gov (United States)

2010-07-13

... Reserve Bank of Dallas (E. Ann Worthy, Vice President) 2200 North Pearl Street, Dallas, Texas 75201-2272... First National Bank of Shiner, Shiner, Texas. 2. A.N.B. Holding Company, Ltd., Terrell, Texas; to acquire up to 32 percent of the voting shares of The ANB Corporation, Terrell, Texas, and thereby...

77 FR 43284 - Formations of, Acquisitions by, and Mergers of Bank Holding Companies

Science.gov (United States)

2012-07-24

..., Pennsylvania. B. Federal Reserve Bank of Dallas (E. Ann Worthy, Vice President) 2200 North Pearl Street, Dallas, Texas 75201-2272: 1. A.N.B. Holding Company, Ltd., Terrell, Texas, to acquire additional voting shares... additional voting shares of The American National Bank of Texas, both in Terrell, Texas; and Lakeside...

Clinical differentiation of patent foramen ovale and secundum atrial septal defect: a survey of pediatric cardiologists in Dallas, Texas, USA.

Science.gov (United States)

Scheuerle, Angela

2011-01-01

Public health birth defect surveillance registries rely on health care provider diagnosis and definition of congenital anomalies. Major anomalies are likely to have consistent diagnoses across providers; however, definition of some more common, often minor, defects can be problematic. Of particular frustration are the transient neonatal heart findings: patent ductus arteriosus, patent foramen ovale, and pulmonary artery branch stenosis. Under certain circumstances these findings may be considered true anomalies-patent foramen ovale (PFO) as a clinical finding overlaps significantly with atrial septal defect (ASD) of secundum type, the latter being considered a true congenital malformation. Some criteria must be established to separate these conditions in case ascertainment. It is therefore helpful to understand the clinical definitions of patent foramen ovale and secundum atrial septal defect. Pediatric cardiologists in the greater Dallas, Texas metropolitan area were surveyed by telephone, fax, and/or email and asked what criteria they use to distinguish a PFO from a secundum ASD. This was an open-ended question. No baseline parameters were suggested or introduced by the interviewer. Pediatric cardiology fellowship training was identified for each physician to examine the hypothesis that graduates of a given program would use the same diagnostic criteria. Responses were obtained from 22 of 23 pediatric cardiologists. Four measurement criteria were identified: size of the opening, presence or absence of a flap of septal tissue, appearance of the defect on echocardiogram and presence/absence/amount of blood shunting across through the opening. Though there was overlap, diagnostic criteria differentiating PFO and secundum ASD varied among pediatric cardiologists. Two fellowship programs were well represented by the respondent population. Eight respondents were trained at Fellowship 1 and 5 at Fellowship 2. Place of fellowship training was not a strong indicator of

Dgroup: DG00093 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available DG00093 Chemical ... DGroup Prednisolone ... D00472 ... Prednisolone (JP17/USP/INN) ... D00980 ... Prednisolo...ne acetate (JP17/USP/INN) ... D00981 ... Prednisolone sodium phosphate (JP17/USP) ... D00982 ... Prednisolo...ne tebutate (JAN/USP) D01239 ... Prednisolone sodium succinate (JP17/USP) ... D01998 ... Prednisolone farnesy...late (JAN) ... D02156 ... Prednisolone hemisuccinate (USP); Prednisolone succinate (JP17) D03301 ... Prednisolo...ne valerate acetate (JAN) ... D08412 ... Prednisolone pivalate D08413 ... Prednisolone sodiu

Cultural diversity in hospitality management : how to improve cultural diversity workforce

OpenAIRE

Korjala, Veera

2013-01-01

The bachelor´s thesis investigates cultural diversity in the hospitality management. It aims at presenting effective ways to improve cultural diversity in a workplace. This study was commissioned by JW Marriott San Antonio Hill Country Resort & Spa in Texas, USA and three hotels in Stillwater, Oklahoma, USA: Atherton Hotel, Hampton Inn & Suites and Residence Inn. The bachelor´s thesis incorporates culture theories and their applications to the workplace. Additionally, it focuses on cultural d...

Solar hot water system installed at Las Vegas, Nevada. Final report

Energy Technology Data Exchange (ETDEWEB)

None

1981-01-01

The solar hot water system installed at LaQuinta Motor Inn Inc., at Las Vegas, Nevada is described. The Inn is a three-story building with a flat roof for installation of the solar panels. The system consists of 1200 square feet of liquid flat plate collectors, a 2500 gallon insulated vertical steel storage tank, two heat exchangers and pumps and controls. The system was designed to supply approximately 74 percent of the total hot water load.

An analytical model of anisotropic low-field electron mobility in wurtzite indium nitride

International Nuclear Information System (INIS)

Wang, Shulong; Liu, Hongxia; Song, Xin; Guo, Yulong; Yang, Zhaonian

2014-01-01

This paper presents a theoretical analysis of anisotropic transport properties and develops an anisotropic low-field electron analytical mobility model for wurtzite indium nitride (InN). For the different effective masses in the Γ-A and Γ-M directions of the lowest valley, both the transient and steady state transport behaviors of wurtzite InN show different transport characteristics in the two directions. From the relationship between velocity and electric field, the difference is more obvious when the electric field is low in the two directions. To make an accurate description of the anisotropic transport properties under low field, for the first time, we present an analytical model of anisotropic low-field electron mobility in wurtzite InN. The effects of different ionized impurity scattering models on the low-field mobility calculated by Monte Carlo method (Conwell-Weisskopf and Brooks-Herring method) are also considered. (orig.)

Pressure dependence of the refractive index in wurtzite and rocksalt indium nitride

Energy Technology Data Exchange (ETDEWEB)

Oliva, R. [Institut Jaume Almera, Consell Superior d' Investigacions Científiques (CSIC), Lluís Solé i Sabarís s.n., 08028 Barcelona, Catalonia (Spain); MALTA-Consolider Team, Departament de Física Aplicada, ICMUV, Universitat de València, c/Dr. Moliner 50, 46100 Burjassot, València (Spain); Segura, A. [MALTA-Consolider Team, Departament de Física Aplicada, ICMUV, Universitat de València, c/Dr. Moliner 50, 46100 Burjassot, València (Spain); Ibáñez, J., E-mail: jibanez@ictja.csic.es; Artús, L. [Institut Jaume Almera, Consell Superior d' Investigacions Científiques (CSIC), Lluís Solé i Sabarís s.n., 08028 Barcelona, Catalonia (Spain); Yamaguchi, T.; Nanishi, Y. [Faculty of Science and Engineering, Ritsumeikan University, Shiga 525-8577 (Japan)

2014-12-08

We have performed high-pressure Fourier transform infrared reflectance measurements on a freestanding InN thin film to determine the refractive index of wurtzite InN and its high-pressure rocksalt phase as a function of hydrostatic pressure. From a fit to the experimental refractive-index curves including the effect of the high-energy optical gaps, phonons, free carriers, and the direct (fundamental) band-gap in the case of wurtzite InN, we obtain pressure coefficients for the low-frequency (electronic) dielectric constant ε{sub ∞}. Negative pressure coefficients of −8.8 × 10{sup −2 }GPa{sup −1} and −14.8 × 10{sup −2 }GPa{sup −1} are obtained for the wurtzite and rocksalt phases, respectively. The results are discussed in terms of the electronic band structure and the compressibility of both phases.

Forecasting Municipal and Industrial Water: IWR MAIN System User’s Guide for Interactive Processing and User’s Manual.

Science.gov (United States)

1983-07-01

LAUNDROMATS LNDY LAUNDRY MEDL MEDICAL OFFICES MOTL MOTELS MOVI DRIVE-IN MOVIES NURS NURSING HOMES OFFN NEW OFFICE BLDG. OFFO OLD OFFICE BLDG. * JAIL...CHURCHES CLUB GOLF-SWIM CLUBS BOWL BOWLING ALLEYS COLG COLLEGES RESID. HOSP MED CENTERS HOTL HOTELS LNDM LAUNDROMATS LNDY LAUNDRY MEDL MEDICAL OFFICES... Laundromat data YMCA Type Facilities Data for YMCA, YWCA, etc. U.S. Census Bureau Many commercial parameters % "Census of Business" Department of Employment

Historical hotels in “Golden Prague”

OpenAIRE

Bończak, Bartosz

2008-01-01

Prague, with its monuments of great historical and artistic value, has been gaining popularity in recent years. It has become one of the most important tourist destinations in Central Europe. This is the reason why hotel industry in this city is developing so quickly – there are 654 collective tourist accommodation establishments with 547 hotels, motels, pensions and residences, which is more than 83%. Establishments, located in the old, historical buildings, are among the m...

Wake-up call

Energy Technology Data Exchange (ETDEWEB)

NONE

1996-01-01

A recent roundtable discussion with energy buyers from major national accounts indicated that electric utilities have a long way to go to prove themselves worthy of customer loyalty. All too often standard utility rate and service practices are at odds with customer needs. This article presents comments from meeting attendees from McDonalds, Sears, TJ Maxx, Southland Corporation, Motel 6, and White Castle about customer needs and problems in utility company services and responses.